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Sample records for hg-free precursor film

  1. Thin HTSC films produced by a polymer metal precursor technique

    Science.gov (United States)

    Lampe, L. v.; Zygalsky, F.; Hinrichsen, G.

    In precursors the metal ions are combined with acid groups of polymethacrylic acid (PMAA), polyacrylic acid (PAA) or novolac. Compared to thermal degradation temperature of pure polymers those of precursors are low. Precursors films were patterned by UV lithography. Diffractometric investigations showed that the c-axis oriented epitaxial films of YBa 2Cu 3O x and Bi 2Sr 2CaCu 2O x originated from amorphous metal oxide films, which were received after thermal degradation of the precursor. Transition temperatures and current densities were determined by electric resistivity measurements.

  2. Thin films by metal-organic precursor plasma spray

    International Nuclear Information System (INIS)

    Schulz, Douglas L.; Sailer, Robert A.; Payne, Scott; Leach, James; Molz, Ronald J.

    2009-01-01

    While most plasma spray routes to coatings utilize solids as the precursor feedstock, metal-organic precursor plasma spray (MOPPS) is an area that the authors have investigated recently as a novel route to thin film materials. Very thin films are possible via MOPPS and the technology offers the possibility of forming graded structures by metering the liquid feed. The current work employs metal-organic compounds that are liquids at standard temperature-pressure conditions. In addition, these complexes contain chemical functionality that allows straightforward thermolytic transformation to targeted phases of interest. Toward that end, aluminum 3,5-heptanedionate (Al(hd) 3 ), triethylsilane (HSi(C 2 H 5 ) 3 or HSiEt 3 ), and titanium tetrakisdiethylamide (Ti(N(C 2 H 5 ) 2 ) 4 or Ti(NEt 2 ) 4 ) were employed as precursors to aluminum oxide, silicon carbide, and titanium nitride, respectively. In all instances, the liquids contain metal-heteroatom bonds envisioned to provide atomic concentrations of the appropriate reagents at the film growth surface, thus promoting phase formation (e.g., Si-C bond in triethylsilane, Ti-N bond in titanium amide, etc.). Films were deposited using a Sulzer Metco TriplexPro-200 plasma spray system under various experimental conditions using design of experiment principles. Film compositions were analyzed by glazing incidence x-ray diffraction and elemental determination by x-ray spectroscopy. MOPPS films from HSiEt 3 showed the formation of SiC phase but Al(hd) 3 -derived films were amorphous. The Ti(NEt 2 ) 4 precursor gave MOPPS films that appear to consist of nanosized splats of TiOCN with spheres of TiO 2 anatase. While all films in this study suffered from poor adhesion, it is anticipated that the use of heated substrates will aid in the formation of dense, adherent films.

  3. Hydrokinetic simulations of nanoscopic precursor films in rough channels

    International Nuclear Information System (INIS)

    Chibbaro, S; Biferale, L; Binder, K; Milchev, A; Dimitrov, D; Diotallevi, F; Succi, S

    2009-01-01

    We report on simulations of capillary filling of highly wetting fluids in nanochannels with and without obstacles. We use atomistic (molecular dynamics) and hydrokinetic (lattice Boltzmann; LB) approaches which indicate clear evidence of the formation of thin precursor films, moving ahead of the main capillary front. The dynamics of the precursor films is found to obey a square-root law like that obeyed by the main capillary front, z 2 (t)∝t, although with a larger prefactor, which we find to take the same value for the different geometries (2D–3D) under inspection. The two methods show a quantitative agreement which indicates that the formation and propagation of thin precursors can be handled at a mesoscopic/hydrokinetic level. This can be considered as a validation of the LB method and opens the possibility of using hydrokinetic methods to explore space–time scales and complex geometries of direct experimental relevance. Then, the LB approach is used to study the fluid behaviour in a nanochannel when the precursor film encounters a square obstacle. A complete parametric analysis is performed which suggests that thin-film precursors may have an important influence on the efficiency of nanochannel-coating strategies

  4. High-quality CdTe films from nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

  5. Tin dioxide nanostructured thin films obtained through polymeric precursor method

    Directory of Open Access Journals (Sweden)

    Marcelo Antônio Dal Santos

    2012-11-01

    Full Text Available Tin dioxide (SnO2 nanostructured thin films with low proportion of defects and low roughness were produced through the systematic control of temperature and viscosity of the precursor solutions used for thin films deposition. These solutions were obtained through the citrate method and the films were deposited through the ‘dip-coating’ technique on glass substrate and after thermal treatment at 470ºC/4h, they were characterized both structurally and morphologically through the X-ray diffractometry, optic microscopy, scanning electronic microscopy, atomic force microscopy, X-ray fluorescence, UV-Vis absorption spectroscopy and X-ray excited photoelectrons spectroscopy. The film thickness was obtained through scanning electronic microscopy of the films cross-section and correlated to the proportion of Sn and Si obtained through X-ray fluorescence. X-ray diffractometry of the films revealed the presence of peaks corresponding to the SnO2 crystalline phase, overlapping a wide peak between 20 and 30º (2?, characteristic of the glass substrate. Optic microscopy, Scanning electronic microscopy and atomic force microscopy revealed homogeneous films, with low roughness, suitable to several applications such as sensors and transparent electrodes. It could be observed through the UV-Vis absorption analysis that the films presented high optical transparency and ‘band gap’ energy 4.36 eV. The X-ray excited photoelectron spectroscopy confirmed the presence of SnO2, as well as traces of the elements present in the glass substrate and residual carbon from the thermal treatment of the films.

  6. An optimized In–CuGa metallic precursors for chalcopyrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2013-10-31

    We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

  7. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    Science.gov (United States)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  8. Deposition of nanostructured photocatalytic zinc ferrite films using solution precursor plasma spraying

    International Nuclear Information System (INIS)

    Dom, Rekha; Sivakumar, G.; Hebalkar, Neha Y.; Joshi, Shrikant V.; Borse, Pramod H.

    2012-01-01

    Highlights: ► Highly economic solution precursor route capable of producing films/coating even for mass scale production. ► Pure spinel phase ZnFe 2 O 4 porous, immobilized films deposited in single step. ► Parameter optimization yields access to nanostructuring in SPPS method. ► The ecofriendly immobilized ferrite films were active under solar radiation. ► Such magnetic system display advantage w.r.t. recyclability after photocatalyst extraction. -- Abstract: Deposition of pure spinel phase, photocatalytic zinc ferrite films on SS-304 substrates by solution precursor plasma spraying (SPPS) has been demonstrated for the first time. Deposition parameters such as precursor solution pH, concentration, film thickness, plasma power and gun-substrate distance were found to control physico-chemical properties of the film, with respect to their crystallinity, phase purity, and morphology. Alkaline precursor conditions (7 2 O 4 film. Very high/low precursor concentrations yielded mixed phase, less adherent, and highly inhomogeneous thin films. Desired spinel phase was achieved in as-deposited condition under appropriately controlled spray conditions and exhibited a band gap of ∼1.9 eV. The highly porous nature of the films favored its photocatalytic performance as indicated by methylene blue de-coloration under solar radiation. These immobilized films display good potential for visible light photocatalytic applications.

  9. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; van Hest, Marinus Franciscus Antonius Maria; Ginley, David S [Evergreen, CO; Leisch, Jennifer [Denver, CO; Taylor, Matthew [West Simsbury, CT; Stanbery, Billy J [Austin, TX

    2011-09-20

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  10. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    Science.gov (United States)

    Yu, Z. X.; Ma, Y. Z.; Zhao, Y. L.; Huang, J. B.; Wang, W. Z.; Moliere, M.; Liao, H. L.

    2017-08-01

    Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P(002). It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the "first principle calculation method" and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have favorable performances to be used as sensitive layer in gas sensing applications.

  11. Patterned YBa2Cu3O7-x thin films from photopolymerizable precursors

    International Nuclear Information System (INIS)

    Hung, Y.; Agostinelli, J.A.

    1990-01-01

    A technique which combines the fabrication and patterning of thin films of the high T c superconductor YBa 2 Cu 3 O 7-x has been developed. The technique possesses the essential features of the metalorganic decomposition method with the additional attribute that the metalorganic precursor is photopolymerizable. Patterns are generated directly in the precursor film using optical exposure through a mask followed by development in a solvent. A subsequent thermal treatment transforms the patterned precursor film to the oriented superconducting phase with c axis perpendicular to the substrate surface. Resistivity measurements for such a patterned film on a single crystal (100)MgO substrate show an onset to the superconducting state occurring at 85 K with zero resistivity below 67 K

  12. Nano structured TiO2 thin films by polymeric precursor method

    International Nuclear Information System (INIS)

    Stroppa, Daniel Grando; Giraldi, Tania Regina; Leite, Edson Roberto; Varela, Jose Arana; Longo, Elson

    2008-01-01

    This work focuses in optimizing setup for obtaining TiO 2 thin films by polymeric precursor route due to its advantages on stoichiometric and morphological control. Precursor stoichiometry, synthesis pH, solids concentration and rotation speed at deposition were optimized evaluating thin films morphology and thickness. Thermogravimetry and NMR were applied for precursor's characterization and AFM, XRD and ellipsometry for thin films evaluation. Results showed successful attainment of homogeneous nanocrystalline anatase TiO 2 thin films with outstanding control over morphological characteristics, mean grain size of 17 nm, packing densities between 57 and 75%, estimated surface areas of 90 m 2 /g and monolayers thickness within 20 and 128 nm. (author)

  13. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    International Nuclear Information System (INIS)

    Yu, Z.X.; Ma, Y.Z.; Zhao, Y.L.; Huang, J.B.; Wang, W.Z.; Moliere, M.; Liao, H.L.

    2017-01-01

    Highlights: • C-axis preferential oriented grown ZnO films were firstly deposited via SPPS with different solutions. • ZnO films were hydrophobic due to cauliflower and honeycomb-like surface morphologies with high surface specific area. • Gas detecting performance of (002) plane oriented ZnO was predicted and compared by “first principle calculation method”. - Abstract: Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P_(_0_0_2_)_. It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the “first principle calculation method” and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have

  14. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Z.X., E-mail: zexin.yu@utbm.fr [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France); Ma, Y.Z., E-mail: yangzhou.ma@outlook.com [School of Materials Science and Engineering, Anhui University of Technology, Ma’anshan 243002 (China); Zhao, Y.L. [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France); Huang, J.B.; Wang, W.Z. [Key Lab of Safety Science of Pressurized System, Ministry of Education, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237 (China); Moliere, M.; Liao, H.L. [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France)

    2017-08-01

    Highlights: • C-axis preferential oriented grown ZnO films were firstly deposited via SPPS with different solutions. • ZnO films were hydrophobic due to cauliflower and honeycomb-like surface morphologies with high surface specific area. • Gas detecting performance of (002) plane oriented ZnO was predicted and compared by “first principle calculation method”. - Abstract: Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P{sub (002).} It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the “first principle calculation method” and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have

  15. Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films

    International Nuclear Information System (INIS)

    Tsay, Chien-Yie; Huang, Tzu-Teng

    2013-01-01

    Indium gallium zinc oxide (IGZO) transparent semiconductor thin films were prepared by KrF excimer laser annealing of sol–gel derived precursor films. Each as-coated film was dried at 150 °C in air and then annealed using excimer laser irradiation. The influence of laser irradiation energy density on surface conditions, optical transmittances, and electrical properties of laser annealed IGZO thin films were investigated, and the physical properties of the excimer laser annealed (ELA) and the thermally annealed (TA) thin films were compared. Experimental results showed that two kinds of surface morphology resulted from excimer laser annealing. Irradiation with a lower energy density (≤250 mJ cm −2 ) produced wavy and irregular surfaces, while irradiation with a higher energy density (≥350 mJ cm −2 ) produced flat and dense surfaces consisting of uniform nano-sized amorphous particles. The explanation for the differences in surface features and film quality is that using laser irradiation energy to form IGZO thin films improves the film density and removes organic constituents. The dried IGZO sol–gel films irradiated with a laser energy density of 350 mJ/cm 2 had the best physical properties of all the ELA IGZO thin films. The mean resistivity of the ELA 350 thin films (4.48 × 10 3 Ω cm) was lower than that of TA thin films (1.39 × 10 4 Ω cm), and the average optical transmittance in the visible range (90.2%) of the ELA 350 thin films was slightly higher than that of TA thin films (89.7%). - Highlights: • IGZO semiconductor films were prepared by laser annealing of sol–gel derived films. • Surface roughness and resistivity of ELA samples were affected by energy density. • The ELA 350 IGZO film exhibited the best properties among all of ELA IGZO films. • Transmittance and resistivity of ELA 350 films are greater than those of TA films

  16. Titanium di-oxide films using a less hygroscopic colloidal precursor

    Energy Technology Data Exchange (ETDEWEB)

    Vandana,, E-mail: vandana1@nplindia.org; Batra, Neha; Kumar, Praveen; Sharma, Pooja; Singh, P.K., E-mail: pksingh@nplindia.org

    2014-04-01

    We report the study of titanium dioxide films (TiO{sub 2}) using titanium di-isopropoxyl di-2ethyl hexanoate Ti(OC{sub 3}H{sub 7}){sub 2} (C{sub 7}H{sub 15}COO){sub 2} colloidal precursor. This compound is less hygroscopic in nature and easy to use with processes like spin or dip coating. Thin films of TiO{sub 2} are made on silicon substrates and their structural and optical properties are studied. The effect of Ti content in the precursor, sintering temperature and its duration on film thickness and refractive index are investigated. Refractive index shows an increasing trend with the rise in the sintering temperature but remains unchanged with the time. The film thickness decreases with both sintering temperature and time and increases with Ti content in the precursor. Reflectivity measurements show marked reduction in the reflection losses compared to bare silicon surface wherein the film thickness is altered by spin speed. XRD results show anatase phase in the samples sintered at lower temperature (<680 °C), however, a mix of anatase, brookite and rutile phases is seen above this temperature. In the samples sintered above 1100 °C, rutile phase is dominant. These results are supported by the X-ray photoelectron spectroscopy. Atomic force microscopy reveals larger grain size at higher sintering temperature. The titanium dioxide films of desirable thickness and refractive index could be used as an antireflection coating on solar cells. - Highlights: • TiO{sub 2} films are made using titanium di-isopropoxyl di-2ethyl hexanoate precursor. • Effect of Ti content in the precursor, sintering temperature and time is studied. • Refractive index (μ) increases with sintering temperature but is independent of time. • Films of desired thickness and μ could be used as an antireflection coating. • XRD results show that rutile phase dominates in samples sintered above 1100 °C.

  17. Processing and characterization of yttrium-stabilized zirconia thin films on polyimide from aqueous polymeric precursors

    International Nuclear Information System (INIS)

    Gorman, B.P.; Anderson, H.U.

    2004-01-01

    Low-temperature deposition of dense, nanocrystalline yttrium-stabilized zirconia (YSZ) thin films on polyimide (PI) substrates is illustrated using an aqueous polymeric precursor spin-coating technique. The polymeric precursor uses low-cost materials, is water-soluble and the viscosity and cation concentrations can be easily adjusted in order to vary the film thickness from 0.02 to 0.3 μm. Due to the use of water as the solvent in the YSZ precursor and the hydrophobic nature of the PI surface, surface modification processes were utilized in order to improve the wetting characteristics. Surface modification of PI substrates using wet chemical and oxygen plasma techniques led to a decrease in the precursor contact angle, and ultimately allowed for uniform film formation on both bulk and thin film PI substrates. Scanning electron microscopy, transmission electron microscopy and UV/Vis absorption illustrate that near full-density nanocrystalline thin films of YSZ can be produced at temperatures as low as 350 deg. C. Thermogravimetric analyses illustrate that the PI substrate does not undergo any weight loss up to these temperatures

  18. Carbon films produced from ionic liquid carbon precursors

    Science.gov (United States)

    Dai, Sheng; Luo, Huimin; Lee, Je Seung

    2013-11-05

    The invention is directed to a method for producing a film of porous carbon, the method comprising carbonizing a film of an ionic liquid, wherein the ionic liquid has the general formula (X.sup.+a).sub.x(Y.sup.-b).sub.y, wherein the variables a and b are, independently, non-zero integers, and the subscript variables x and y are, independently, non-zero integers, such that ax=by, and at least one of X.sup.+ and Y.sup.- possesses at least one carbon-nitrogen unsaturated bond. The invention is also directed to a composition comprising a porous carbon film possessing a nitrogen content of at least 10 atom %.

  19. Characterization of electrochemically deposited films from aqueous and ionic liquid cobalt precursors toward hydrogen evolution reactions

    Energy Technology Data Exchange (ETDEWEB)

    Dushatinski, Thomas; Huff, Clay; Abdel-Fattah, Tarek M., E-mail: fattah@cnu.edu

    2016-11-01

    Highlights: • Co films deposition via aqueous and ionic liquid Precursors. • Hydrogen evolution produced from reactive surfaces. • Co deposited films characterized by SEM, AFM, EDX and XRD techniques. - Abstract: Electrodepositions of cobalt films were achieved using an aqueous or an ethylene glycol based non-aqueous solution containing choline chloride (vitamin B4) with cobalt chloride hexahydrate precursor toward hydrogen evolution reactions from sodium borohydride (NaBH{sub 4}) as solid hydrogen feedstock (SHF). The resulting cobalt films had reflectivity at 550 nm of 2.2% for aqueously deposited films (ACoF) and 1.3% for non-aqueously deposited films (NCoF). Surface morphology studied by scanning electron microscopy showed a positive correlation between particle size and thickness. The film thicknesses were tunable between >100 μm and <300 μm for each film. The roughness (Ra) value measurements by Dektak surface profiling showed that the NCoF (Ra = 165 nm) was smoother than the ACoF (Ra = 418 nm). The NCoFs and ACoFs contained only α phase (FCC) crystallites. The NCoFs were crystalline while the ACoFs were largely amorphous from X-ray diffraction analysis. The NCoF had an average Vickers hardness value of 84 MPa as compared to 176 MPa for ACoF. The aqueous precursor has a single absorption maximum at 510 nm and the non-aqueous precursor had three absorption maxima at 630, 670, and 695 nm. The hydrogen evolution reactions over a 1 cm{sup 2} catalytic surface with aqueous NaBH{sub 4} solutions generated rate constants (K) = equal to 4.9 × 10{sup −3} min{sup −1}, 4.6 × 10{sup −3} min{sup −1}, and 3.3 × 10{sup −3} min{sup −1} for ACoF, NCoF, and copper substrate respectively.

  20. Hybrid Perovskite Thin-Film Photovoltaics: In Situ Diagnostics and Importance of the Precursor Solvate Phases

    KAUST Repository

    Munir, Rahim

    2016-11-07

    Solution-processed hybrid perovskite semiconductors attract a great deal of attention, but little is known about their formation process. The one-step spin-coating process of perovskites is investigated in situ, revealing that thin-film formation is mediated by solid-state precursor solvates and their nature. The stability of these intermediate phases directly impacts the quality and reproducibility of thermally converted perovskite films and their photovoltaic performance.

  1. Hybrid Perovskite Thin-Film Photovoltaics: In Situ Diagnostics and Importance of the Precursor Solvate Phases

    KAUST Repository

    Munir, Rahim; Sheikh, Arif D.; Abdelsamie, Maged; Hu, Hanlin; Yu, Liyang; Zhao, Kui; Kim, Taesoo; El Tall, Omar; Li, Ruipeng; Smilgies, Detlef M.; Amassian, Aram

    2016-01-01

    Solution-processed hybrid perovskite semiconductors attract a great deal of attention, but little is known about their formation process. The one-step spin-coating process of perovskites is investigated in situ, revealing that thin-film formation is mediated by solid-state precursor solvates and their nature. The stability of these intermediate phases directly impacts the quality and reproducibility of thermally converted perovskite films and their photovoltaic performance.

  2. Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Debabrata [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)]. E-mail: dpradhan@sciborg.uwaterloo.ca; Sharon, Maheshwar [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2007-06-30

    A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor 'camphor' and deposition of carbon films on alumina substrate at higher temperatures (600-900 deg. C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp{sup 2}-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.

  3. Rare earth [beta]-diketonate and carboxylate metal complexes as precursors for MOCVD of oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmina, N.P. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Martynenko, L.I. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Tu, Z.A. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Kaul, A.R. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Girichev, G.V. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Giricheva, N.I. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Rykov, A.N. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Korenev, Y.M. (Dept. of Chemistry, Moscow State Univ. (Russian Federation))

    1993-08-01

    Volatile and thermostable complexes of lanthanide acetylacetonates and pivalates were obtained and investigated by different methods. These compounds were used for lanthanide oxide containing film producing and for fabrication of silica optical fibers doped by lanthanide oxide. The properties of these and already known volatile precursors are compared. (orig.).

  4. Rare earth β-diketonate and carboxylate metal complexes as precursors for MOCVD of oxide films

    International Nuclear Information System (INIS)

    Kuzmina, N.P.; Martynenko, L.I.; Tu, Z.A.; Kaul, A.R.; Girichev, G.V.; Giricheva, N.I.; Rykov, A.N.; Korenev, Y.M.

    1993-01-01

    Volatile and thermostable complexes of lanthanide acetylacetonates and pivalates were obtained and investigated by different methods. These compounds were used for lanthanide oxide containing film producing and for fabrication of silica optical fibers doped by lanthanide oxide. The properties of these and already known volatile precursors are compared. (orig.)

  5. Properties of NiO thin films deposited by chemical spray pyrolysis using different precursor solutions

    Energy Technology Data Exchange (ETDEWEB)

    Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Reguig, B.A.; Khelil, A. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France); Benchouk, K. [Universite d' Oran Es-Senia, LPCM2E (Algeria); Bernede, J.C. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes F-44000 (France)], E-mail: Jean-Christian.Bernede@univ-nantes.fr

    2008-07-15

    NiO thin films have been deposited by chemical spray pyrolysis using a perfume atomizer to grow the aerosol. The influence of the precursor, nickel chloride hexahydrate (NiCl{sub 2}.6H{sub 2}O), nickel nitrate hexahydrate (Ni(NO{sub 3}){sub 2}.6H{sub 2}O), nickel hydroxide hexahydrate (Ni(OH){sub 2}.6H{sub 2}O), nickel sulfate tetrahydrate (NiSO{sub 4}.4H{sub 2}O), on the thin films properties has been studied. In the experimental conditions used (substrate temperature 350 deg. C, precursor concentration 0.2-0.3 M, etc.), pure NiO thin films crystallized in the cubic phase can be achieved only with NiCl{sub 2} and Ni(NO{sub 3}){sub 2} precursors. These films have been post-annealed at 425 deg. C for 3 h either in room atmosphere or under vacuum. If all the films are p-type, it is shown that the NiO films conductivity and optical transmittance depend on annealing process. The properties of the NiO thin films annealed under room atmosphere are not significantly modified, which is attributed to the fact that the temperature and the environment of this annealing is not very different from the experimental conditions during spray deposition. The annealing under vacuum is more efficient. This annealing being proceeded in a vacuum no better than 10{sup -2} Pa, it is supposed that the modifications of the NiO thin film properties, mainly the conductivity and optical transmission, are related to some interaction between residual oxygen and the films.

  6. Polymer compositions, polymer films and methods and precursors for forming same

    Science.gov (United States)

    Klaehn, John R; Peterson, Eric S; Orme, Christopher J

    2013-09-24

    Stable, high performance polymer compositions including polybenzimidazole (PBI) and a melamine-formaldehyde polymer, such as methylated, poly(melamine-co-formaldehyde), for forming structures such as films, fibers and bulky structures. The polymer compositions may be formed by combining polybenzimidazole with the melamine-formaldehyde polymer to form a precursor. The polybenzimidazole may be reacted and/or intertwined with the melamine-formaldehyde polymer to form the polymer composition. For example, a stable, free-standing film having a thickness of, for example, between about 5 .mu.m and about 30 .mu.m may be formed from the polymer composition. Such films may be used as gas separation membranes and may be submerged into water for extended periods without crazing and cracking. The polymer composition may also be used as a coating on substrates, such as metal and ceramics, or may be used for spinning fibers. Precursors for forming such polymer compositions are also disclosed.

  7. Solution precursor plasma deposition of nanostructured CdS thin films

    International Nuclear Information System (INIS)

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2012-01-01

    Highlights: ► Inexpensive process with capability to produce large scale nanostructured coatings. ► Technique can be employed to spray the coatings on any kind of substrates including polymers. ► The CdS coatings developed have good electrical conductivity and optical properties. ► Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal α-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be ∼2.5 eV. The electrical resistivity of the films (0.243 ± 0.188 × 10 5 Ω cm) was comparable with the literature values. These nanostructured polycrystalline CdS films could be useful in sensing and solar applications.

  8. Solution precursor plasma deposition of nanostructured CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan, Dearborn, MI 48128 (United States)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Inexpensive process with capability to produce large scale nanostructured coatings. Black-Right-Pointing-Pointer Technique can be employed to spray the coatings on any kind of substrates including polymers. Black-Right-Pointing-Pointer The CdS coatings developed have good electrical conductivity and optical properties. Black-Right-Pointing-Pointer Coatings possess large amount of particulate boundaries and nanostructured grains. -- Abstract: Cadmium sulfide (CdS) films are used in solar cells, sensors and microelectronics. A variety of techniques, such as vapor based techniques, wet chemical methods and spray pyrolysis are frequently employed to develop adherent CdS films. In the present study, rapid deposition of CdS thin films via plasma spray route using a solution precursor was investigated, for the first time. Solution precursor comprising cadmium chloride, thiourea and distilled water was fed into a DC plasma jet via an axial atomizer to create ultrafine droplets for instantaneous and accelerated thermal decomposition in the plasma plume. The resulting molten/semi-molten ultrafine/nanoparticles of CdS eventually propel toward the substrate to form continuous CdS films. The chemistry of the solution precursor was found to be critical in plasma pyrolysis to control the stoichiometry and composition of the films. X-ray diffraction studies confirmed hexagonal {alpha}-CdS structure. Surface morphology and microstructures were investigated to compare with other synthesis techniques in terms of process mechanism and structural features. Transmission electron microscopy studies revealed nanostructures in the atomized particulates. Optical measurements indicated a decreasing transmittance in the visible light with increasing the film thickness and band gap was calculated to be {approx}2.5 eV. The electrical resistivity of the films (0.243 {+-} 0.188 Multiplication-Sign 10{sup 5} {Omega} cm) was comparable with the literature

  9. Zirconia thin films from aqueous precursors: Processing, microstructural development, and epitaxial growth

    International Nuclear Information System (INIS)

    Miller, K.T.

    1991-01-01

    Thin films of ZrO 2 (Y 2 O 3 ) were prepared from aqueous salt precursors by spin coating. Films were pyrolyzed to produce porous polycrystalline thin films of 5-10 nm grain size. Subsequent microstructural development depends greatly upon the nature of the substrate. Upon randomly oriented sapphire, the films initially sintered to full density; further heat treatment and grain growth causes these films to break into interconnected islands and finally isolated particles. Thermodynamic calculations predict that breakup is energetically favorable when the grain-size film-thickness ratio exceeds a critical value. Upon basal-plane-oriented sapphire, grain growth and breakup prefer the (100) oriented grains, presumably because this orientation is a special interface of low energy. The isolated, oriented grains produced by film breakup act as seeds for the growth of newly deposited material. Upon (100) cubic zirconia, true epitaxial films develop. Epitaxial growth was observed for lattice mismatches up to 1.59%. Growth proceeds from a fine epitaxial layer which is produced during the initial stages of heat treatment, consuming the porous polycrystalline material and producing a dense epitaxial thin film whose misfit is accommodated by a combination of film strain and misfit dislocations

  10. The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

    International Nuclear Information System (INIS)

    Souza, E.C.F.; Simoes, A.Z.; Cilense, M.; Longo, E.; Varela, J.A.

    2004-01-01

    Pure and Nb doped PbZr 0.4 Ti 0.6 O 3 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO 2 /Si (100) substrates and annealed at 700 deg. C. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr 0.39 Ti 0.6 Nb 0.1 O 3 showed good saturation, with values for coercive field (E c ) equal to 60 KV cm -1 and for remanent polarization (P r ) equal to 20 μC cm -2 . The measured dielectric constant (ε) is 1084 for this film. These results show good potential for application in FERAM

  11. Improvement of physical properties of IGZO thin films prepared by excimer laser annealing of sol–gel derived precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Huang, Tzu-Teng

    2013-06-15

    Indium gallium zinc oxide (IGZO) transparent semiconductor thin films were prepared by KrF excimer laser annealing of sol–gel derived precursor films. Each as-coated film was dried at 150 °C in air and then annealed using excimer laser irradiation. The influence of laser irradiation energy density on surface conditions, optical transmittances, and electrical properties of laser annealed IGZO thin films were investigated, and the physical properties of the excimer laser annealed (ELA) and the thermally annealed (TA) thin films were compared. Experimental results showed that two kinds of surface morphology resulted from excimer laser annealing. Irradiation with a lower energy density (≤250 mJ cm{sup −2}) produced wavy and irregular surfaces, while irradiation with a higher energy density (≥350 mJ cm{sup −2}) produced flat and dense surfaces consisting of uniform nano-sized amorphous particles. The explanation for the differences in surface features and film quality is that using laser irradiation energy to form IGZO thin films improves the film density and removes organic constituents. The dried IGZO sol–gel films irradiated with a laser energy density of 350 mJ/cm{sup 2} had the best physical properties of all the ELA IGZO thin films. The mean resistivity of the ELA 350 thin films (4.48 × 10{sup 3} Ω cm) was lower than that of TA thin films (1.39 × 10{sup 4} Ω cm), and the average optical transmittance in the visible range (90.2%) of the ELA 350 thin films was slightly higher than that of TA thin films (89.7%). - Highlights: • IGZO semiconductor films were prepared by laser annealing of sol–gel derived films. • Surface roughness and resistivity of ELA samples were affected by energy density. • The ELA 350 IGZO film exhibited the best properties among all of ELA IGZO films. • Transmittance and resistivity of ELA 350 films are greater than those of TA films.

  12. Efficiency Enhancement of Perovskite Solar Cells by Pumping Away the Solvent of Precursor Film Before Annealing.

    Science.gov (United States)

    Xu, Qing-Yang; Yuan, Da-Xing; Mu, Hao-Ran; Igbari, Femi; Bao, Qiaoliang; Liao, Liang-Sheng

    2016-12-01

    A new approach to improve the quality of MAPbI3 - x Cl x perovskite film was demonstrated. It involves annealing the precursor film after pumping away the solvent, which can decrease the influence of solvent evaporation rate for the growth of the MAPbI3 - x Cl x perovskite film. The resulting film showed improved morphology, stronger absorption, fewer crystal defects, and smaller charge transfer resistance. The corresponding device demonstrated enhanced performance when compared with a reference device. The averaged value of power conversion efficiency increased from 10.61 to 12.56 %, and a champion efficiency of 14.0 % was achieved. This work paves a new way to improve the efficiency of perovskite solar cells.

  13. Efficient photovoltaic conversion of graphene–carbon nanotube hybrid films grown from solid precursors

    International Nuclear Information System (INIS)

    Gan, Xin; Lv, Ruitao; Bai, Junfei; Zhang, Zexia; Wei, Jinquan; Huang, Zheng-Hong; Zhu, Hongwei; Kang, Feiyu; Terrones, Mauricio

    2015-01-01

    Large-area (e.g. centimeter size) graphene sheets are usually synthesized via pyrolysis of gaseous carbon precursors (e.g. methane) on metal substrates like Cu using chemical vapor deposition (CVD), but the presence of grain boundaries and the residual polymers during transfer deteriorates significantly the properties of the CVD graphene. If carbon nanotubes (CNTs) can be covalently bonded to graphene, the hybrid system could possess excellent electrical conductivity, transparency and mechanical strength. In this work, conducting and transparent CNT–graphene hybrid films were synthesized by a facile solid precursor pyrolysis method. Furthermore, the synthesized CNT–graphene hybrid films display enhanced photovoltaic conversion efficiency when compared to devices based on CNT membranes or graphene sheets. Upon chemical doping, the graphene–CNT/Si solar cells reveal power conversion efficiencies up to 8.50%. (paper)

  14. Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

    International Nuclear Information System (INIS)

    Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

    2006-01-01

    Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

  15. Microstructure evolution in nanoporous gold thin films made from sputter-deposited precursors

    International Nuclear Information System (INIS)

    Gwak, Eun-Ji; Kang, Na-Ri; Baek, Un Bong; Lee, Hae Moo; Nahm, Seung Hoon; Kim, Ju-Young

    2013-01-01

    We fabricate almost crack-free 1.5 μm thick nanoporous gold thin films using free-corrosion dealloying and transfer processes from sputter-deposited precursors. By controlling the temperature and the concentration of the nitric acid solution during free-corrosion dealloying, we obtain ligament sizes in nanoporous gold between 22 and 155 nm. We investigate the effects of dissolution rate of Ag atoms, surface diffusivity of Au atoms and formation of Ag oxide on nanoporosity evolution

  16. Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films

    Science.gov (United States)

    Schulz, Douglas L.; Curtis, Calvin J.; Ginley, David S.

    2000-01-01

    A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

  17. The influence of the precursor compositional ratio on Cu2ZnSnS4 films prepared by using sulfurization of the metallic precursor

    Science.gov (United States)

    Amal, Muhamad I.; Kim, Kyoo Ho

    2013-12-01

    Cu2ZnSnS4 (CZTS) films were prepared by using the sulfurization of sputtered metallic precursors. The compositional ratio of the CZTS films was slightly different compared to their initial metallic precursors due to elemental loss during annealing. The Cu/(Zn+Sn) ratio for the CZTS-1, CZTS-2 and CZTS-3 films were 0.91, 1.06 and 1.21, respectively. In addition, all films had a compositional ratio of Zn/Sn >1. The grain sizes of the CZTS films increased with increasing Cu ratio. X-ray diffraction and Raman spectroscopy showed that the CZTS films with an excess of copper and zinc had secondary phases of Cu2SnS3 and ZnS. The optical band gap and absorption coefficient for all CZTS films in the range of the experimental compositions were calculated to be 1.5 eV and >104 cm-1, respectively. The presence of secondary phases related to compositional ratio in the CZTS films influenced the electrical properties. The CZTS-1 film with a Cu-poor and Zn-rich composition whose a carrier concentration, an electrical mobility, and a resistivity values were 2.29 × 1018 cm-3, 10.29 cm2 V-1 s-1, 3.16 Ω cm, is the most suitable for solar-cell applications.

  18. Er:YAB nanoparticles and vitreous thin films by the polymeric precursor method

    Energy Technology Data Exchange (ETDEWEB)

    Maia, Lauro J. Q., E-mail: lauro@if.sc.usp.b [Universidade de Sao Paulo, Grupo Crescimento de Cristais e Materiais Ceramicos, Departamento de Fisica e Ciencia dos Materiais, Instituto de Fisica de Sao Carlos (Brazil); Ibanez, Alain; Ortega, Luc [Laboratoire de Cristallographie CNRS associe a l' Universite Joseph Fourier et a l' INPG (France); Mastelaro, Valmor R.; Hernandes, Antonio C. [Universidade de Sao Paulo, Grupo Crescimento de Cristais e Materiais Ceramicos, Departamento de Fisica e Ciencia dos Materiais, Instituto de Fisica de Sao Carlos (Brazil)

    2008-12-15

    The synthesis of Y{sub 0.9}Er{sub 0.1}Al{sub 3}(BO{sub 3}){sub 4} crystalline powders and vitreous thin films were studied. Precursor solutions were obtained using a modified polymeric precursor method using d-sorbitol as complexant agent. The chemical reactions were described. Y{sub 0.9}Er{sub 0.1}Al{sub 3}(BO{sub 3}){sub 4} composition presents good thermal stability with regard to crystallization. The Y{sub 0.9}Er{sub 0.1}Al{sub 3}(BO{sub 3}){sub 4} crystallized phase can be obtained at 1,150 {sup o}C, in agreement with other authors. Crack- and porosity-free films were obtained with very small grain size and low RMS roughness. The films thickness revealed to be linearly dependent on precursor solution viscosity, being the value of 25 mPa s useful to prepare high-quality amorphous multi-layers (up to {approx} 800 nm) at 740 {sup o}C during 2 h onto silica substrates by spin coating with a gyrset technology.

  19. Instantaneous preparation of CuInSe2 films from elemental In, Cu, Se particles precursor films in a non-vacuum process

    International Nuclear Information System (INIS)

    Kaigawa, R.; Uesugi, T.; Yoshida, T.; Merdes, S.; Klenk, R.

    2009-01-01

    CuInSe 2 (CIS) films are successfully prepared by means of non-vacuum, instantaneous, direct synthesis from elemental In, Cu, Se particles precursor films without prior synthesis of CIS nanoparticle precursors and without selenization with H 2 Se or Se vapor. Our precursor films were prepared on metal substrates by spraying the solvent with added elemental In, Cu, and Se particles. Precursor films were instantaneously sintered using a spot welding machine. When the electric power was fixed to 0.6 kVA, elemental In, Cu, or Se peaks were not observed and only peaks of CIS are observed by X-ray diffraction (XRD) on the film sintered for 7/8 s. We can observe XRD peaks indicative of the chalcopyrite-type structure, such as (101), (103) and (211) diffraction peaks. We conclude that the synthesized CIS crystals have chalcopyrite-type structure with high crystallinity

  20. Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Rafia Barir

    2017-01-01

    Full Text Available Undoped nickel oxide (NiO thin films were deposited on 500°C heated glass substrates using spray pyrolysis method at (0.015–0.1 M range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD shows the formation of NiO under cubic structure with single diffraction peak along (111 plane at 2θ=37.24°. When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.

  1. Characterization of ZnS thin films synthesized through a non-toxic precursors chemical bath

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez, C.A. [Department of Materials Engineering, Faculty of Engineering, University of Concepción, Edmundo Larenas 270, Concepción 4070409 (Chile); Sandoval-Paz, M.G. [Department of Physics, Faculty of Physics and Mathematics, University of Concepción, Concepción (Chile); Cabello, G. [Department of Basic Sciences, Faculty of Sciences, University of Bío-Bío, Campus Fernando May, Chillán (Chile); Flores, M.; Fernández, H. [Department of Physics, Faculty of Physics and Mathematics, University of Chile, Beauchef 850, Santiago (Chile); Carrasco, C., E-mail: ccarrascoc@udec.cl [Department of Materials Engineering, Faculty of Engineering, University of Concepción, Edmundo Larenas 270, Concepción 4070409 (Chile)

    2014-12-15

    Highlights: • High quality ZnS thin films have been deposited by chemical bath deposition technique from a non-toxic precursor’s solution. • Nanocrystalline ZnS thin films with large band gap energy were synthesized without using ammonia. • Evidence that the growing of the thin films is carried out by means of hydroxide mechanism was found. • The properties of these ZnS thin films are similar and in some cases better than the corresponding ones produced using toxic precursors such as ammonia. - Abstract: In solar cells, ZnS window layer deposited by chemical bath technique can reach the highest conversion efficiency; however, precursors used in the process normally are materials highly volatile, toxic and harmful to the environment and health (typically ammonia and hydrazine). In this work the characterization of ZnS thin films deposited by chemical bath in a non-toxic alkaline solution is reported. The effect of deposition technique (growth in several times) on the properties of the ZnS thin film was studied. The films exhibited a high percentage of optical transmission (greater than 80%); as the deposition time increased a decreasing in the band gap values from 3.83 eV to 3.71 eV was observed. From chemical analysis, the presence of ZnS and Zn(OH){sub 2} was identified and X-ray diffraction patterns exhibited a clear peak corresponding to ZnS hexagonal phase (1 0 3) plane, which was confirmed by electron diffraction patterns. From morphological studies, compact samples with well-defined particles, low roughness, homogeneous and pinhole-free in the surface were observed. From obtained results, it is evident that deposits of ZnS–CBD using a non-toxic solution are suitable as window layer for TFSC.

  2. Development of molecular precursors for deposition of indium sulphide thin film electrodes for photoelectrochemical applications.

    Science.gov (United States)

    Ehsan, Muhammad Ali; Peiris, T A Nirmal; Wijayantha, K G Upul; Olmstead, Marilyn M; Arifin, Zainudin; Mazhar, Muhammad; Lo, K M; McKee, Vickie

    2013-08-14

    Symmetrical and unsymmetrical dithiocarbamato pyridine solvated and non-solvated complexes of indium(III) with the general formula [In(S2CNRR')3]·n(py) [where py = pyridine; R,R' = Cy, n = 2 (1); R,R' = (i)Pr, n = 1.5 (2); NRR' = Pip, n = 0.5 (3) and R = Bz, R' = Me, n = 0 (4)] have been synthesized. The compositions, structures and properties of these complexes have been studied by means of microanalysis, IR and (1)H-NMR spectroscopy, X-ray single crystal and thermogravimetric (TG/DTG) analyses. The applicability of these complexes as single source precursors (SSPs) for the deposition of β-In2S3 thin films on fluorine-doped SnO2 (FTO) coated conducting glass substrates by aerosol-assisted chemical vapour deposition (AACVD) at temperatures of 300, 350 and 400 °C is studied. All films have been characterized by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDX) for the detection of phase and stoichiometry of the deposit. Scanning electron microscopy (SEM) studies reveal that precursors (1)-(4), irrespective of different metal ligand design, generate comparable morphologies of β-In2S3 thin films at different temperatures. Direct band gap energies of 2.2 eV have been estimated from the UV-vis spectroscopy for the β-In2S3 films fabricated from precursors (1) and (4). The photoelectrochemical (PEC) properties of β-In2S3 were confirmed by recording the current-voltage plots under light and dark conditions. The plots showed anodic photocurrent densities of 1.25 and 0.65 mA cm(-2) at 0.23 V vs. Ag/AgCl for the β-In2S3 films made at 400 and 350 °C from the precursors (1) and (4), respectively. The photoelectrochemical performance indicates that the newly synthesised precursors are highly useful in fabricating β-In2S3 electrodes for solar energy harvesting and optoelectronic application.

  3. MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

    CERN Document Server

    Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

    1999-01-01

    We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

  4. ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    Martin Mikulics

    2012-07-01

    Full Text Available Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001 as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.

  5. The Chemistry of Inorganic Precursors during the Chemical Deposition of Films on Solid Surfaces.

    Science.gov (United States)

    Barry, Seán T; Teplyakov, Andrew V; Zaera, Francisco

    2018-03-20

    The deposition of thin solid films is central to many industrial applications, and chemical vapor deposition (CVD) methods are particularly useful for this task. For one, the isotropic nature of the adsorption of chemical species affords even coverages on surfaces with rough topographies, an increasingly common requirement in microelectronics. Furthermore, by splitting the overall film-depositing reactions into two or more complementary and self-limiting steps, as it is done in atomic layer depositions (ALD), film thicknesses can be controlled down to the sub-monolayer level. Thanks to the availability of a vast array of inorganic and metalorganic precursors, CVD and ALD are quite versatile and can be engineered to deposit virtually any type of solid material. On the negative side, the surface chemistry that takes place in these processes is often complex, and can include undesirable side reactions leading to the incorporation of impurities in the growing films. Appropriate precursors and deposition conditions need to be chosen to minimize these problems, and that requires a proper understanding of the underlying surface chemistry. The precursors for CVD and ALD are often designed and chosen based on their known thermal chemistry from inorganic chemistry studies, taking advantage of the vast knowledge developed in that field over the years. Although a good first approximation, however, this approach can lead to wrong choices, because the reactions of these precursors at gas-solid interfaces can be quite different from what is seen in solution. For one, solvents often aid in the displacement of ligands in metalorganic compounds, providing the right dielectric environment, temporarily coordinating to the metal, or facilitating multiple ligand-complex interactions to increase reaction probabilities; these options are not available in the gas-solid reactions associated with CVD and ALD. Moreover, solid surfaces act as unique "ligands", if these reactions are to be

  6. The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

    Science.gov (United States)

    Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

    2017-02-01

    The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

  7. Layer-by-layer self-assembly of polyimide precursor/layered double hydroxide ultrathin films

    International Nuclear Information System (INIS)

    Chen Dan; Huang Shu; Zhang Chao; Wang Weizhi; Liu Tianxi

    2010-01-01

    The layer-by-layer (LBL) self-assembly has been extensively used as a simple and effective method for the preparation of polyelectrolyte multilayer films. In this work, we utilized this unique method to prepare polyimide precursor/layered double hydroxide (LDH) ultrathin films. Well-crystallized Co-Al-CO 3 LDH and subsequent anion exchanged Co-Al-NO 3 LDH were prepared and characterized by scanning electron microscopy and X-ray diffraction (XRD). By vigorous shaking of the as-prepared Co-Al-NO 3 LDH, positively charged and exfoliated LDH nanosheets were obtained. Atomic force microscopy and XRD investigations indicated the delamination of LDH nanosheets. The precursor of polyimide, poly(amic acid) tertiary amine salt (PAS) was prepared by the polycondensation of dianhydride and diamine, and subsequent amine salt formation. By using the LBL method, heterogeneous ultrathin films of PAS and LDH were prepared. The formation of the ordered nanostructured assemblies was confirmed by the progressive enhancement of UV absorbance and the XRD results.

  8. Domain growth of carbon nanotubes assisted by dewetting of thin catalyst precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Alok Kumar [Defence Materials and Stores R and D Establishment (DRDO), GT Road, Kanpur 208013 (India); Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India); Sachan, Priyanka; Samanta, Chandan [Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India); Mukhopadhyay, Kingsuk [Defence Materials and Stores R and D Establishment (DRDO), GT Road, Kanpur 208013 (India); Sharma, Ashutosh, E-mail: ashutos@iitk.ac.in [Department of Chemical Engineering, Indian Institute of Technology, Kanpur 208016 (India)

    2014-01-01

    We explore self-organized dewetting of ultrathin films of a novel metal complex as a one step surface patterning method to create nanoislands of iron, using which spatially separated carbon nanostructures were synthesized. Dewetting of ultrathin metal complex films was induced by two different methods: liquid solvent exposure and thermal annealing to engender surface patterning. For thermal dewetting, thin films of the iron oleate complex were dewetted at high temperature. In the case of liquid solvent assisted dewetting, the metal complex, mixed with a sacrificial polymer (polystyrene) was spin coated as thin films (<40 nm) and then dewetted under an optimal solution mixture consisting of methyl ethyl ketone, acetone and water. The carrier polymer was then selectively removed to produce the iron metal islands. These metal islands were used for selective growth of discrete patches of multiwall CNTs and CNFs by a chemical vapor deposition (CVD) process. Solvent induced dewetting showed clear advantages over thermal dewetting owing to reduced size of catalyst domains formed by dewetting, an improved control over CNT growth as well as in its ability to immobilize the seed particles. The generic solution mediated dewetting and pattern generation in thin films of various catalytic precursors can thus be a powerful method for selective domain growth of a variety of functional nanomaterials.

  9. Morphologies of Sol–Gel Derived Thin Films of ZnO Using Different Precursor Materials and their Nanostructures

    Directory of Open Access Journals (Sweden)

    Chandra Sudhir

    2007-01-01

    Full Text Available AbstractWe have shown that the morphological features of the sol–gel derived thin films of ZnO depend strongly on the choice of the precursor materials. In particular, we have used zinc nitrate and zinc acetate as the precursor materials. While the films using zinc acetate showed a smoother topography, those prepared by using zinc nitrate exhibited dendritic character. Both types of films were found to be crystalline in nature. The crystallite dimensions were confined to the nanoscale. The crystallite size of the nanograins in the zinc nitrate derived films has been found to be smaller than the films grown by using zinc acetate as the precursor material. Selected area electron diffraction patterns in the case of both the precursor material has shown the presence of different rings corresponding to different planes of hexagonal ZnO crystal structure. The results have been discussed in terms of the fundamental considerations and basic chemistry governing the growth kinetics of these sol–gel derived ZnO films with both the precursor materials.

  10. Effect of different nickel precursors on capacitive behavior of electrodeposited NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kore, R. M.; Ghadge, T. S.; Ambare, R. C.; Lokhande, B. J., E-mail: bjlokhande@yahoo.com [School of Physical Sciences, Solapur University, Solapur-413 255, M.S. (India)

    2016-04-13

    In the present study, the effect of nickel precursors containing different anions like nitrate, chloride and sulphate on the morphology and pseudocapacitance behavior of NiO is investigated. The NiO samples were prepared by using a potentiondynamic electrodeposition technique in the three electrode cell. Cyclic voltammetry technique was exploited for potentiodynamic deposition of the films. The obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), etc. The XRD reveals the cubic crystal structure for all samples. The SEM micrograph shows nanoflakelike, up grown nanoflakes and honeycomb like nanostructured morphologies for nitrate, chloride and sulphate precursors respectively. The capacitive behavior of these samples was recorded using cyclic voltammetry (CV), charge-discharge and electrochemical impedance spectroscopy (EIS) in 1 M KOH electrolyte. The specific capacitance values of NiO samples obtained using CV for nitrate, chloride and sulphate precursors were 136, 214 and 893 Fg{sup −1} respectively, at the scan rate of 5 mVs{sup −1}. The charge discharge study shows high specific energy for the sample obtained from sulphate (23.98 Whkg{sup −1}) as compared to chloride (9.67 Whkg{sup −1}) and nitrate (4.9 Whkg{sup −1}), whereas samples of cholride (13.9 kWkg{sup −1} and nitrate (10.5 kWkg{sup −1}) shows comparatively more specific power than samples obtained from sulphate (7.6 kWkg{sup −1}). The equivalent series resistance of NiO samples observed from EIS study are 1.34, 1.29 and 1.27 Ω respectively for nitrate, chloride and sulphate precursors. These results emphasizes that the samples obtained from sulphate precursors provides very low impedance through honeycomb like nanostructured morphology which supports good capacitive behavior of NiO.

  11. Fast electrochemical deposition of Ni(OH)2 precursor involving water electrolysis for fabrication of NiO thin films

    Science.gov (United States)

    Koyama, Miki; Ichimura, Masaya

    2018-05-01

    Ni(OH)2 precursor films were deposited by galvanostatic electrochemical deposition (ECD), and NiO thin films were fabricated by annealing in air. The effects of the deposition current densities were studied in a range that included current densities high enough to electrolyze water and generate hydrogen bubbles. The films fabricated by ECD involving water electrolysis had higher transparency and smoother surface morphology than those deposited with lower current densities. In addition, the annealed NiO films clearly had preferred (111) orientation when the deposition was accompanied by water electrolysis. p-type conduction was confirmed for the annealed films.

  12. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Holt, Ian, E-mail: ian.holt@rjah.nhs.uk [Wolfson Centre for Inherited Neuromuscular Disease, RJAH Orthopaedic Hospital, Oswestry, Shropshire SY10 7AG (United Kingdom); Institute for Science and Technology in Medicine, Keele University, Keele, Staffordshire ST5 5BG (United Kingdom); Gestmann, Ingo, E-mail: Ingo.Gestmann@fei.com [FEI Europe B.V., Achtseweg Noord 5, 5651 Eindhoven (Netherlands); Wright, Andrew C., E-mail: a.wright@glyndwr.ac.uk [Advanced Materials Research Laboratory, Glyndwr University, Plas Coch, Mold Rd, Wrexham LL11 2AW (United Kingdom)

    2013-10-15

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth.

  13. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    International Nuclear Information System (INIS)

    Holt, Ian; Gestmann, Ingo; Wright, Andrew C.

    2013-01-01

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth

  14. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  15. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  16. Fabrication and Characterization of CZTS Thin Films Prepared by the Sulfurization of RF-Sputtered Stacked Metal Precursors

    Science.gov (United States)

    Abusnina, Mohamed; Moutinho, Helio; Al-Jassim, Mowafak; DeHart, Clay; Matin, Mohammed

    2014-09-01

    In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the sulfurization of metal precursors deposited sequentially via radio frequency magnetron sputtering on Mo-coated soda-lime glass. The stack order of the precursors was Mo/Zn/Sn/Cu. Sputtered precursors were annealed in sulfur atmosphere with nine different conditions to study the impact of sulfurization time and substrate temperature on the structural, morphological, and optical properties of the final CZTS films. X-ray fluorescence was used to determine the elemental composition ratio of the metal precursors. Final CZTS films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS). XRD and EDS were combined to investigate the films' structure and to identify the presence of secondary phases. XRD analysis indicated an improvement in film crystallinity with an increase of the substrate temperature and annealing times. Also indicated was the minimization and/or elimination of secondary phases when the films experienced longer annealing time. EDS revealed slight Sn loss in films sulfurized at 550°C; however, an increase of the sulfurization temperature to 600°C did not confirm these results. SEM study showed that films treated with higher temperatures exhibited dense morphology, indicating the completion of the sulfurization process. The estimated absorption coefficient was on the order of 104 cm-1 for all CZTS films, and the values obtained for the optical bandgap energy of the films were between 1.33 eV and 1.52 eV.

  17. Plasma-assisted MOCVD growth of superconducting NbN thin films using Nb dialkylamide and Nb alkylimide precursors

    International Nuclear Information System (INIS)

    Liu Xiang; Ott, A.W.; Chang, R.P.H.; Babcok, J.R.; Belot, J.A.; Metz, M.V.; Marks, T.J.; Lane, M.A.; Kannewurf, C.R.

    2001-01-01

    The first example of the use of metal-organic precursors for depositing NbN superconducting thin films is described. The study, which employed niobium(IV) and niobium(V) pulsed source precursors and hydrazine plasma as the nitrogen source, indicates that T c is highly dependent on the lattice parameters and level of oxygen impurities, which are in turn governed by growth and post-deposition annealing temperatures. (orig.)

  18. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    Science.gov (United States)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  19. Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

    International Nuclear Information System (INIS)

    Shrestha, Shankar Prasad; Ghimire, Rishi; Nakarmi, Jeevan Jyoti; Kim, Young Sung; Shrestha, Sabita; Park, Chong Yun; Boo, Jin Hyo

    2010-01-01

    Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity (ρ), carrier concentration (n), and hall mobility (μ) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity (8.5 x 10 -2 ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility

  20. Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

    International Nuclear Information System (INIS)

    Makino, Hisao; Miyake, Aki; Yamada, Takahiro; Yamamoto, Naoki; Yamamoto, Tetsuya

    2009-01-01

    Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth

  1. Fabrication of compact and stable perovskite films with optimized precursor composition in the fast-growing procedure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tanghao; Zhou, Yuanyuan; Hu, Qin; Chen, Ke; Zhang, Yifei; Yang, Wenqiang; Wu, Jiang; Ye, Fengjun; Luo, Deying; Zhu, Kai; Padture, Nitin P.; Liu, Feng; Russell, Thomas; Zhu, Rui; Gong, Qihuang

    2017-06-02

    The fast-growing procedure (FGP) provides a simple, high-yield and lead (Pb)-release free method to prepare perovskite films. In the FGP, the ultra-dilute perovskite precursor solution is drop-cast onto a hot (~240 degrees C) substrate, where a perovskite film grows immediately accompanied by the rapid evaporation of the host solvent. In this process, all the raw materials in the precursor solution are deposited into the final perovskite film. The potential pollution caused by Pb can be significantly reduced. Properties of the FGP-processed perovskite films can be modulated by the precursor composition. While CH3NH3Cl (MACl) affects the crystallization process and leads to full surface coverage, CH(NH2)2I (FAI) enhances the thermal stability of the film. Based on the optimized precursor composition of PbI2(1-x)FAI xMACl, x=0.75, FGP-processed planar heterojunction perovskite solar cells exhibit power conversion efficiencies (PCEs) exceeding 15% with suppressed hysteresis and excellent reproducibility.

  2. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  3. Characterization of boron nitride thin films prepared from a polymer precursor

    International Nuclear Information System (INIS)

    Chan, V.Z.; Rothman, J.B.; Palladino, P.; Sneddon, L.G.; Composto, R.J.

    1996-01-01

    Excellent quality boron nitride (BN) thin films on silicon have been produced by a simple procedure involving spincoating solutions of the open-quote open-quote single-source close-quote close-quote polymeric-precursor polyborazylene, (B 3 N 3 H ∼4 ) x , on a silicon substrate, followed by pyrolysis at 900 degree C. Rutherford backscattering spectrometry (RBS) indicates that the B/N ratios are 1.37 and 1.09 for conversions carried out in a vacuum oven at 900 and 1250 degree C, respectively. Forward recoil spectrometry (FRES) showed that the atomic percent of residual hydrogen is 10 and 9%, respectively. Plain-view and cross-sectional scanning electron microscopy (SEM) studies showed that the samples annealed at 900 degree C were clean and uniform in thickness. A thickness of 800x10 15 atoms/cm 2 was determined by ion scattering. Films annealed to 1250 degree C likewise showed a continuous unbroken boron nitride layer, but also exhibited morphological features resulting from reactions of the underlying silicon oxide-silicon interface in the substrate. Auger electron spectroscopy and atomic force microscopy showed that the BN coating produced at this higher temperature remained unbroken but had a surface area of ∼15% covered by dimples 2 endash 7 nm in depth. Compared to typical films made by chemical vapor deposition, BN films produced from this open-quote open-quote single-source close-quote close-quote method have lower hydrogen and carbon concentrations. copyright 1996 Materials Research Society

  4. Nanocystalline ZnO films prepared via polymeric precursor method (Pechini)

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, C.; Doria, J.; Paucar, C.; Hernandez, M. [Laboratorio de Materiales Ceramicos y Vitreos, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia); Mosquera, A.; Rodriguez, J.E. [Grupo CYTEMAC, Universidad del Cauca, Calle 5 No 4-70, Popayan (Colombia); Gomez, A. [Departamento de Ingenieria de Materiales, Universidad Nacional de Colombia, sede Medellin, A.A. 568, Medellin (Colombia); Baca, E. [Grupo de Ingenieria de Nuevos Materiales, Universidad del Valle, A.A. 25360 Cali (Colombia); Moran, O., E-mail: omoranc@unal.edu.c [Laboratorio de Materiales Ceramicos y Vitreos, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia)

    2010-09-01

    The polymeric precursor method (Pechini) was employed to prepare high-quality nanocrystalline zinc oxide (ZnO) films. Briefly, the process started off with the preparation of a coating solution by the Pechini process followed by a coating of the glass substrates by a dip-coating technique and subsequent heat-treatment of the as-deposited films up to 550 {sup o}C for 30 min. The Rietveld profile analysis of the X-ray diffraction (XRD) spectra revealed the wuerzite structure as expected for ZnO with a P6{sub 3}mc symmetry. No additional peaks were observed that would correspond to any secondary crystalline phase. The average crystallites size was 20 nm as calculated by Sherrer's equation. UV-vis spectroscopy showed sharp ultraviolet absorption edges at {approx}380 nm. The absorption edge analysis yielded optical band gap energy of 3.24 eV with electronic transition of the direct transition type. The Fourier transform infrared (FTIR) analysis showed asymmetric and symmetric stretching modes of the carboxyl group (C=O). Scanning electron microscope (SEM) analysis revealed a crack-free surface morphology indicating that coating of the amorphous glass substrates was homogeneous on large surface areas. The temperature dependent conductivity featured a typical semiconducting-like behavior with resistivity approaching 3x10{sup -1} {Omega} cm at 220 K.

  5. Nanogravimetric studies of tungsten oxide thin films obtained by the polymeric precursor method

    International Nuclear Information System (INIS)

    Fernandes, V.C.; Santos, M.C.; Bulhoes, L.O.S.

    2007-01-01

    In this work, the intercalation/de-intercalation process of Li + ions in the tungsten oxide matrix was investigated. The reaction mechanism involved was also investigated. The WO 3 films, prepared by the polymeric precursor method, were deposited on a Pt covered quartz crystal using the dip-coating technique. The electrolyte was 0.1 mol L -1 LiClO 4 in acetonitrile. The morphology and structure of the deposit was accomplished by scanning electron microscopy and X-ray diffraction, respectively. In the electrochemical quartz crystal nanobalance results, it was observed that the mass transport as well as the kinetic processes involved are facilitated in the films cycled at lower potential sweep-rates. The mass variation data as a function of the charge variations in the anodic and cathodic regions indicate the participation of solvent molecules (acetonitrile) during the Li + ion intercalation/de-intercalation process. This was confirmed by the development of a model of the species flux as a function of the potential

  6. Influence of precursor concentration on physical properties of CdO thin films prepared by spray pyrolysis technique using nebulizer

    Energy Technology Data Exchange (ETDEWEB)

    Anitha, M.; Amalraj, L.; Anitha, N. [Virudhunagar Hindu Nadar' s Senthikumara Nadar College (Autonomous), Department of Physics, Virudhunagar, Tamilnadu (India)

    2017-12-15

    Cadmium oxide (CdO) thin films were prepared with different concentrations of precursor solution (0.05, 0.1, 0.15, 0.2 and 0.25 M, respectively) at the optimized temperature (200 C) using the nebulized spray pyrolysis technique to obtain better crystallinity in polycrystalline thin films on amorphous glass substrates. The XRD characterization of those samples revealed a preferential orientation along the (111) plane having a cubic structure. The scanning electron microscopy (SEM) analysis displayed that all the as-deposited thin films have spherical shaped grains. The transmittance of the as-deposited CdO thin films had decreased from 88 to 71% for longer wavelength regions (600-900 nm) as the precursor concentration had increased and then increased for higher precursor concentration. The optical band gap was found to lie between 2.45 and 2.40 eV belonging to direct transition for those thin films. The presence of Cd-O bond (540 cm{sup -1}) was confirmed by FTIR spectrum. The emission properties of CdO thin films were studied by luminescence spectrum recorded at room temperature. A maximum carrier concentration and minimum resistivity values of 4.743 x 10{sup 19} cm{sup -3} and 1.06 x 10{sup -3} Ω-cm, respectively, were obtained for 0.2 M precursor concentration. These CdO thin films have high optical transmittance and high room temperature conductivity, which can be used as the TCO and Solar cell (window layer) material. (orig.)

  7. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

    Science.gov (United States)

    Dhere, Neelkanth G.; Kadam, Ankur A.

    2009-12-15

    A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

  8. MOCVD and ALD of rare earth containing multifunctional materials. From precursor chemistry to thin film deposition and applications

    International Nuclear Information System (INIS)

    Milanov, Andrian Petrov

    2010-01-01

    The present thesis deals with the development of metal-organic complexes of rare elements. They should be used as novel precursors for the production of rare earth thin films by metal-organic chemical vapor deposition (MOCVD) and Atomic Layer Deposition (ALD). Within the work two precursor classes were examined, the tris-Malonato-complexes as well as the tris-Guanidinato-complexes of a series of rare earth metals. The latter showed excellent properties regarding to their volatility, their thermal stability, the defined decomposition and high reactivity towards water. They have been successfully used as precursors for the MOCVD of rare earth oxide layers. By using of a gadolinium guanidinate it could also be shown that the rare earth guanidinates are promising precursors for ALD of rare earth oxide and MOCVD of rare earth nitride layers. [de

  9. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

    International Nuclear Information System (INIS)

    Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

    2014-01-01

    The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO 2 thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr) 3 SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO 2 films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO 2 films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS

  10. Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

    2012-07-15

    Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

  11. Effect of oxygen partial pressure on texture development in lead zirconate titanate thin films processed from metalorganic precursors

    International Nuclear Information System (INIS)

    Norton, Jarrod L.; Liedl, Gerald L.; Slamovich, Elliott B.

    1999-01-01

    Metalorganic liquid precursors were used to examine the effects of processing atmosphere on texture development in oriented Pb(Zr 0.60 Ti 0.40 )O 3 thin films. After removal of organic ligands via pyrolysis, the films were heated at 25 degree sign C/min in a 5% H 2 /Ar atmosphere until a switching temperature, after which the atmosphere was switched to pure oxygen. The films were heated to a maximum temperature of 650 degree sign C with switching temperatures ranging from 450 to 600 degree sign C. The degree of (111) orientation in the lead zirconate titanate (PZT) films increased with increasing switching temperature, resulting in highly textured (111) PZT films. These results suggest that atmosphere control plays a significant role in texture development during rapid thermal processing. (c) 1999 Materials Research Society

  12. Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

    1994-12-01

    The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

  13. H and C NMR investigations of Pb(Zr,Ti)O3 thin-film precursor solutions

    International Nuclear Information System (INIS)

    Assink, R.A.; Schwartz, R.W.

    1993-01-01

    Solvent reactions, ligand substitutions, and the oligomer/polymer backbone structure are important factors in the solution preparation of ceramic films. In this study the authors have used H and C NMR spectroscopy to characterize solvent and ligand effects in precursor solutions used for the deposition of ferroelectric PZT (lead zirconate titanate) thin films. Solutions were prepared by a sequential precursor addition method from carboxylate and alkoxide precursors of the three cations, and the solvent, acetic acid, methanol, and water. The results indicate that acetic acid was a key component in the solution preparation process. As observed previously for single metallic component systems, its presence resulted in esterification reactions, leading in the present case to the formation of methyl, isopropyl, and n-butyl acetates. Second, acetic acid functioned as a chemical modifier, or chelating agent, replacing essentially all of the alkoxy ligands of the original precursors. Since alkoxy replacement appeared to be complete, we may describe the PZT species formed in solution as oxo acetate in nature. Finally, the solvent and ligand behavior of a solution prepared by an inverted mixing order was compared to the behavior of the solution prepared by a sequential precursor addition. The spectra for the two solutions were similar, and only differences in the relative intensities of the ester and alcoholic resonances were observed. 29 refs., 5 figs., 3 tabs

  14. Synthesis of organometallic hydroxides of titanium, vanadium, cobalt and chromium as precursors of thin films type MaOb

    International Nuclear Information System (INIS)

    Montero Villalobos, Mavis

    2001-01-01

    This study shows the results obtained from a general objective that was the synthesis and characterization of precursors of thin films of metallic oxides, two different routes of synthesis have been practiced: route molecular precursors and route Sol-Gel technic. In the first route one of the objectives of the investigation is to obtain a molecular precursor of material type M a O b a route of synthesis have been tried proved that involves anhydrous chlorides of the transition metals and linked R that are alcoxides of metal such as silicon, titanium and zirconium. In the second route the general objective to create thin films of metallic oxide has been maintained but the way to resolve the problem has changed, not giving so much emphasis to the molecular precursors as it was originally presented (this due mainly to its instability and difficulty of synthesis), but being supported in the sun-gel chemistry. It was started a new synthesis line through the sun-gel chemistry that is more versatile and simplifies the process in the film formation [es

  15. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    Energy Technology Data Exchange (ETDEWEB)

    Sulyaeva, Veronica S., E-mail: veronica@niic.nsc.ru [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A. [Department of Functional Materials Chemistry, Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, Valerii G. [Laboratory of Physical Principles for Integrated Microelectronics, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Kirienko, Viktor V. [Laboratory of Nonequilibrium Semiconductors Systems, Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation)

    2014-05-02

    Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC{sub x}N{sub y} films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC{sub x}N{sub y} films were found to be high optical transparent layers (93%). • BC{sub x}N{sub y} layers are dielectrics with dielectric constant k = 2.2–8.9.

  16. Optical and electrical characteristics of plasma enhanced chemical vapor deposition boron carbonitride thin films derived from N-trimethylborazine precursor

    International Nuclear Information System (INIS)

    Sulyaeva, Veronica S.; Kosinova, Marina L.; Rumyantsev, Yurii M.; Kuznetsov, Fedor A.; Kesler, Valerii G.; Kirienko, Viktor V.

    2014-01-01

    Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition using N-trimethylborazine as a precursor. The films were deposited on Si(100) and fused silica substrates. The grown films were characterized by ellipsometry, Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray photoelectron spectroscopy, spectrophotometry, capacitance–voltage and current–voltage measurements. The deposition parameters, such as substrate temperature (373–973 K) and gas phase composition were varied. Low temperature BC x N y films were found to be high optical transparent layers in the range of 300–2000 nm, the transmittance as high as 93% has been achieved. BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9 depending on the synthesis conditions. - Highlights: • Thin BC x N y films have been obtained by plasma enhanced chemical vapor deposition. • N-trimethylborazine was used as a precursor. • Low temperature BC x N y films were found to be high optical transparent layers (93%). • BC x N y layers are dielectrics with dielectric constant k = 2.2–8.9

  17. Effect of the Precursor Solution Concentration of CuI Thin Film Deposited By Spin Coating Method

    International Nuclear Information System (INIS)

    Nur Amalina Muhmmad; Atiq, A.M.; Rusop, M.

    2011-01-01

    Copper (I) Iodide is a p-type semiconductor with bandgap of 3.1 eV. It is water insoluble solid with three crystalline phases α, β, γ. In this research, the effect of precursor concentration of CuI thin film deposited by spin coating method was studied. The wide band gap p type semiconductor CuI thin film was prepared by mixing the CuI powder (ALDRICH, 98 %) with 50 ml of acetonitrile as a solvent. The CuI concentration varies from 0.025 M to 0.5 M. The speed for spin coating is 1000 rpm for 60 seconds. After the deposition the CuI thin films were annealed at 150 degree Celsius. The electrical and optical properties were characterized by current-voltage (I-V) measurement using Solar Simulator (Bukoh Keiki EP-2000) and ultraviolet visible- near infrared (UV-VIS-NIR) measurement (Jasco V-670). The result shows the CuI thin film properties strongly depends on its precursor concentration. Thickness between 33.65 nm - 441.25 nm was obtained as the concentration increases. The increment of thickness affects the electrical properties which is the resistivity and conductivity of CuI thin film. For optical properties, the transmittance decreases with high concentration as high amount of CuI particle were observed in the thin films. From the transmittance, the absorption coefficient and optical band gap of CuI was determined using Taucs plot. (author)

  18. V6O13 films by control of the oxidation state from aqueous precursor to crystalline phase.

    Science.gov (United States)

    Peys, Nick; Ling, Yun; Dewulf, Daan; Gielis, Sven; De Dobbelaere, Christopher; Cuypers, Daniel; Adriaensens, Peter; Van Doorslaer, Sabine; De Gendt, Stefan; Hardy, An; Van Bael, Marlies K

    2013-01-28

    An aqueous deposition process for V(6)O(13) films is developed whereby the vanadium oxidation state is continuously controlled throughout the entire process. In the precursor stage, a controlled wet chemical reduction of the vanadium(V) source with oxalic acid is achieved and monitored by (51)Vanadium Nuclear Magnetic Resonance ((51)V-NMR) and Ultraviolet-Visible (UV-Vis) spectroscopy. The resulting vanadium(IV) species in the aqueous solution are identified as mononuclear citrato-oxovanadate(IV) complexes by Electron Paramagnetic Resonance (EPR) and Fourier Transform Infra-Red (FTIR) spectroscopy. This precursor is successfully employed for the deposition of uniform, thin films. The optimal deposition and annealing conditions for the formation of crystalline V(6)O(13), including the control of the vanadium oxidation state, are determined through an elaborate study of processing temperature and O(2) partial pressure. To ensure a sub 100 nm adjustable film thickness, a non-oxidative intermediate thermal treatment is carried out at the end of each deposition cycle, allowing maximal precursor decomposition while still avoiding V(IV) oxidation. The resulting surface hydrophilicity, indispensable for the homogeneous deposition of the next layer, is explained by an increased surface roughness and the increased availability of surface vanadyl groups. Crystalline V(6)O(13) with a preferential (002) orientation is obtained after a post deposition annealing in a 0.1% O(2) ambient for thin films with a thickness of 20 nm.

  19. Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

    2014-09-15

    The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

  20. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    International Nuclear Information System (INIS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-01-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al 3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al 3+ films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni 3+ /Ni 2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni 3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni 3+ /Ni 2+ varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted

  1. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

    2016-08-30

    Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

  2. Synthesis of Cu2ZnSnS4 thin films by a precursor solution paste for thin film solar cell applications.

    Science.gov (United States)

    Cho, Jin Woo; Ismail, Agus; Park, Se Jin; Kim, Woong; Yoon, Sungho; Min, Byoung Koun

    2013-05-22

    Cu2ZnSnS4 (CZTS) is a very promising semiconductor material when used for the absorber layer of thin film solar cells because it consists of only abundant and inexpensive elements. In addition, a low-cost solution process is applicable to the preparation of CZTS absorber films, which reduces the cost when this film is used for the production of thin film solar cells. To fabricate solution-processed CZTS thin film using an easily scalable and relatively safe method, we suggest a precursor solution paste coating method with a two-step heating process (oxidation and sulfurization). The synthesized CZTS film was observed to be composed of grains of a size of ~300 nm, showing an overall densely packed morphology with some pores and voids. A solar cell device with this film as an absorber layer showed the highest efficiency of 3.02% with an open circuit voltage of 556 mV, a short current density of 13.5 mA/cm(2), and a fill factor of 40.3%. We also noted the existence of Cd moieties and an inhomogeneous Zn distribution in the CZTS film, which may have been triggered by the presence of pores and voids in the CZTS film.

  3. Ultralow k films by using a plasma-enhanced chemical vapor deposition porogen approach: Study of the precursor reaction mechanisms

    International Nuclear Information System (INIS)

    Castex, A.; Jousseaume, V.; Deval, J.; Bruat, J.; Favennec, L.; Passemard, G.

    2008-01-01

    As interconnects are scaled down, much effort is made to achieve ultralow k material with a dielectric constant lower than 2.5. Thus, many new precursors are investigated in plasma-enhanced chemical vapor deposition. This is particularly true with the porogen approach where two molecules are used: an organosilicon to create the silicon matrix and an organic molecule ''porogen'' that creates material porosity during a post-treatment such as annealing. In this article, the influence of the organosilicon molecular structure is investigated. Two ''matrix precursors'' with different structures are therefore compared. The first one, referred to as D5, has a ring structure (decamethyl pentacyclosiloxane); the second one, referred to as DEOMS, has a star structure (diethoxymethyl silane). The porogen organic molecule, referred to as CHO, is cyclohexen oxide. The fragmentation paths of the precursor molecules in the plasma are investigated by quadrupole mass spectroscopy and the film structure is studied by Fourier transform infrared spectroscopy. The mass spectroscopy analysis shows that the fragmentation in plasma is highest for DEOMS, intermediate for CHO, and lowest for D5 in comparable process conditions. At the maximum plasma power setting, the loss rate, which yields molecule consumption, is 43%-81% for the D5-CHO mixture, respectively, and 73%-37% for the DEOMS-CHO mixture, respectively. This is related to higher bond-dissociation energy for the siloxane (Si-O-Si) link in D5 than silane (Si-H), silylethoxyde (Si-OC 2 H 5 ) in DEOMS, or C-C and epoxy cycle in CHO. Indeed, a higher electron-energy relative threshold for dissociation under electron impact is measured for D5 (around 7 eV) than for DEOMS and CHO (around 4 eV). Moreover, the fragment structures differ from one precursor to another. Methyl groups are abstracted from D5 and a few polysiloxane chains are produced from pentacycle opening and fragmentation. In the case of DEOMS, many single silicon

  4. Electron-gun Evaporation of Cu and In thin Films as Precursors for CuInSe, Formation

    International Nuclear Information System (INIS)

    Caballero, R.; Guillen, C.

    2001-01-01

    In the present invigorations CuInSe, is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm 2 , and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs

  5. Iron selenide films by aerosol assisted chemical vapor deposition from single source organometallic precursor in the presence of surfactants

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Raja Azadar [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Badshah, Amin, E-mail: aminbadshah@yahoo.com [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Younis, Adnan [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia); Khan, Malik Dilshad [Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Akhtar, Javeed [Department of Physics, COMSATS Institute of Information Technology, Park Road, Chak Shahzad, Islamabad (Pakistan)

    2014-09-30

    This article presents the synthesis and characterization (multinuclear nuclear magnetic resonance, Fourier transform infrared spectroscopy, carbon–hydrogen–nitrogen–sulfur analyzer, atomic absorption spectrometry and thermogravimetric analysis) of a single source organometallic precursor namely 1-acetyl-3-(4-ferrocenylphenyl)selenourea for the fabrication of iron selenide (FeSe) films on glass substrates using aerosol assisted chemical vapor deposition (AACVD). The changes in the morphologies of the films have been monitored by the use of two different surfactants i.e. triton X-100 and tetraoctylphosphonium bromide during AACVD. The role of surfactant has been evaluated by examining the interaction of the surfactants with the precursor by using UV–vis spectroscopy and cyclic voltammetry. The fabricated FeSe films have been characterized with powder X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. - Highlights: • Ferrocene incorporated selenourea (FIS) has been synthesized and characterized. • FeSe thin films have been fabricated from FIS. • Mechanism of film growth was studied with cyclic voltammetry and UV–vis spectroscopy.

  6. Atomic layer deposition of VO{sub 2} films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Xinrui [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cao, Yunzhen, E-mail: yzhcao@mail.sic.ac.cn [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, Lu; Li, Ying; Song, Lixin [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2017-02-28

    Highlights: • VO{sub 2} film was easily deposited by ALD using novel vanadium precursor V(NMe{sub 2}){sub 4}. • Deposition and annealing condition were systematically investigated. • Comparable transition properties of VO{sub 2} film on resistance and spectral transmittance were studied. - Abstract: VO{sub 2} thin films have been grown on Si(100) (VO{sub 2}/Si) and fused silica substrates (VO{sub 2}/SiO{sub 2}) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO{sub 2} thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150–200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO{sub 2} films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO{sub 2}/Si film. AFM was applied to study the surface morphology of VO{sub 2}/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO{sub 2}/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (T{sub c,h}) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of T{sub c,h} compared with the bulk VO{sub 2} (68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO{sub 2}/SiO{sub 2} films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across

  7. Effect of the Milling Time of the Precursors on the Physical Properties of Sprayed Aluminum-Doped Zinc Oxide (ZnO:Al Thin Films

    Directory of Open Access Journals (Sweden)

    María De La Luz Olvera

    2012-08-01

    Full Text Available Aluminum doped zinc oxide (ZnO:Al thin films were deposited on soda-lime glass substrates by the chemical spray technique. The atomization of the solution was carried out by ultrasonic excitation. Six different starting solutions from both unmilled and milled Zn and Al precursors, dissolved in a mix of methanol and acetic acid, were prepared. The milling process was carried out using a planetary ball mill at a speed of 300 rpm, and different milling times, namely, 15, 25, 35, 45, and 60 min. Molar concentration, [Al]/[Zn] atomic ratio, deposition temperature and time, were kept at constant values; 0.2 M, 3 at.%, 475 °C, and 10 min, respectively. Results show that, under the same deposition conditions, electrical resistivities of ZnO:Al thin films deposited from milled precursors are lower than those obtained for films deposited from unmilled precursors. X-ray diffraction analysis revealed that all films display a polycrystalline structure, fitting well with the hexagonal wurtzite structure. Changes in surface morphology were observed by scanning electron microscopy (SEM as well, since films deposited from unmilled precursors show triangular shaped grains, in contrast to films deposited from 15 and 35 min milled precursors that display thin slices with hexagonal shapes. The use of milled precursors to prepare starting solutions for depositing ZnO:Al thin films by ultrasonic pyrolysis influences their physical properties.

  8. Contribution towards ALD and MOCVD of rare earth oxides and hafnium oxide. From precursor evaluation to process development and thin film characterization

    International Nuclear Information System (INIS)

    Xu, Ke

    2013-01-01

    This PhD thesis is consisted of two major parts: precursor development for ALD and MOCVD applications as well as thin film deposition using ALD and MOCVD with self developed precursors. The first part of this work presents the synthesis, characterization and detailed thermal property investigations of different novel group IV and rare earth precursor classes (guandinate, guanidine and ketoiminate). The second part of this work presents the ALD and MOCVD depositions using various guanidinate precursors for forming corresponding metal oxide thin films. The overall motivation of this work is to fulfill the lack of precursors of rare earth and group IV elements for ALD and MOCVD applications that satisfy the stringent requirements for the modern microelectronic and optoelectronic technologies. The aspect of the precursor engineering part is focusing on influence of ligand sphere on precursors' chemical and thermal properties. In this way, we successfully introduced guanidine and ketoiminate as potential ligands for the precursor design. The thin film deposition part of this work is ALD of rare earth oxides and group IV oxides employing literature known compounds which were previously developed in our research group. The main focus was dedicated to the process optimization, the characterization of the structural, morphological, compositional and functional properties of the deposited thin films. Certain film properties were discussed comparatively with the corresponding thin films deposited with literature known precursors. It was already shortly demonstrated in Chapter 6 that the guanidine ligand showed potential interest as suitable ligand for precursor engineering. This titan guanidine precursor [Ti(NC(NMe 2 ) 2 ) 4 ] (GD1) possesses higher thermal stability compared to its parent amide, [Ti(NMe 2 ) 4 ], while reactivity against water is not significantly affected. It could be very interesting to transfer this ligand for the precursor development of rare earth

  9. Synthesis of diamond films by pulsed liquid injection chemical vapor deposition using a mixture of acetone and water as precursor

    International Nuclear Information System (INIS)

    Apatiga, L.M.; Morales, J.

    2009-01-01

    A chemical vapor deposition reactor based on the flash evaporation of an organic liquid precursor was used to grow diamond films on Si substrates. An effective pulsed liquid injection mechanism consisting of an injector, normally used for fuel injection in internal combustion engines, injects micro-doses of the precursor to the evaporation zone at 280 o C and is instantly evaporated. The resulting vapor mixture is transported by a carrier gas to the high-temperature reaction chamber where the diamond nucleates and grows on the substrate surface at temperatures ranging from 750 to 850 o C. The injection frequency, opening time, number of pulses and other injector parameters are controlled by a computer-driven system. The diamond film morphology and structure were characterized by scanning electron microscopy and Raman spectroscopy. The as-deposited diamond films show a ball-shaped morphology with a grain size that varies from 100 to 400 nm, as well as the characteristic diamond Raman band at 1332 cm -1 . The effects of the experimental parameters and operation principle on the diamond films quality are analyzed and discussed in terms of crystallinity, composition, structure, and morphology.

  10. Effect of precursor concentration on physical properties of nebulized spray deposited In2S3 thin films

    Directory of Open Access Journals (Sweden)

    J. Raj Mohamed

    2016-09-01

    Full Text Available The present work investigates the effect of precursor concentration (mc on the structural, optical, morphological and electrical conductivity properties of In2S3 thin films grown on amorphous glass substrates by nebulized spray pyrolysis (NSP technique. The mixed phase of cubic and tetragonal structure of In2S3 thin films at higher concentration has been observed by X-ray diffraction pattern. The reduced strain by increasing the precursor concentration increased the average crystallite from 17.8 to 28.9 nm. The energy dispersive analysis by X-ray (EDAX studies confirmed the presence of In and S. The transmittance, optical direct band gap energy, Urbach energy and skin depth of In2S3 films have been analyzed by optical absorption spectra. The better conductivity and mobility noticed at mc = 0.15 M are explained by carrier concentration and crystallite. Better optical and electrical conductivity behaviour of In2S3 thin film sample proposes for effective solar cell fabrication.

  11. Single source precursors for fabrication of I-III-VI{sub 2} thin-film solar cells via spray CVD

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, J.A.; Banger, K.K.; Jin, M.H.-C.; Harris, J.D.; Cowen, J.E.; Bohannan, E.W.; Switzer, J.A.; Buhro, W.E.; Hepp, A.F

    2003-05-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors can be used in either a hot, or cold-wall spray chemical vapour deposition reactor, for depositing CuInS{sub 2}, CuGaS{sub 2} and CuGaInS{sub 2} at reduced temperatures (400-450 sign C), which display good electrical and optical properties suitable for photovoltaic devices. X-ray diffraction studies, energy dispersive spectroscopy and scanning electron microscopy confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  12. Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

    Science.gov (United States)

    Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  13. Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

    Institute of Scientific and Technical Information of China (English)

    Shujing Guo; Liqiang Li; Zhongwu Wang; Zeyang Xu; Shuguang Wang; Kunjie Wu; Shufeng Chen; Zongbo Zhang; Caihong Xu; Wenfeng Qiu

    2017-01-01

    Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability,excellent electrical properties,mature preparation process,and good compatibility with organic semiconductors.However,most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum.In this paper,we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route,which possesses a low leakage current,high capacitance,and low surface roughness.The silica thin film can be produced in the condition of low temperature and atmospheric environment.To meet various demands,the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution.The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance.This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving,time-saving and easy to operate.

  14. Structural and optical properties of tin (II) sulfide thin films deposited using organophosphorus precursor (Ph3PS)

    Science.gov (United States)

    Assili, Kawther; Alouani, Khaled; Vilanova, Xavier

    2017-02-01

    Tin sulfide (SnS) thin films have been deposited onto glass substrates using triphenylphosphine sulfide (Ph3PS) as a sulfur precursor in a chemical vapor deposition reactor in a temperature range of 250 °C-400 °C. The influence of the sulphidisation temperature in the crystal structure, surface morphology, chemical composition and optical properties has been investigated. X-ray diffraction, energy dispersive analysis of x-rays, and Raman spectroscopy showed that pure SnS thin films have been successfully obtained at 250 °C. All the deposited films were polycrystalline and showed orthorhombic structure, with a preferential orientation according to the direction . The optical measurements showed that the films deposited exhibited a direct allowed transition and have a relatively high absorption coefficient. The presence of mixed tin sulfide phases granted by the variation of the sulphidisation temperature has affected the optical properties of the deposited films. The refractive index (n) and extinction coefficient (k), has low values compared to conventional semiconductor materials. The grown films can be considered as a good light absorbing material and a promising candidate for application in optoelectronic devices.

  15. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  16. Preparation and Characterization of Cu(In,GaSe2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

    Directory of Open Access Journals (Sweden)

    Jiang Liu

    2012-01-01

    Full Text Available Se-containing precursor films with two different compositions were prepared by magnetron sputtering from and targets, and then were selenized using Se vapor. The effects of precursor composition and selenization temperature on the film properties were investigated. The results show that Se phase plays a critical role in film growth and electrical properties of CIGS films. The Cu-rich films exhibit different surface morphology and better crystallinity, as compared to the Cu-poor films. All the CIGS films exhibit p-type conductivity. The resistivity of the Cu-rich films is about three orders of magnitude lower than that of the Cu-poor films, which is attributed to the presence of p-type highly conductive Se phase.

  17. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun, E-mail: lujun@mail.buct.edu.cn

    2016-09-15

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al{sup 3+} ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al{sup 3+} films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni{sup 3+}/Ni{sup 2+} also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni{sup 3+} making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni{sup 3+}/Ni{sup 2+} varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted.

  18. The role of cationic precursors in structural, morphological and optical properties of PbS thin films

    International Nuclear Information System (INIS)

    Preetha, K C; Murali, K V; Ragina, A J; Deepa, K; Dhanya, A C; Remadevi, T L

    2013-01-01

    Thin films of Lead sulphide (PbS) were grown on soda lime glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) method using lead acetate, lead chloride, lead nitrate, and lead sulphate as cationic precursors and thioacetamide as sulphur source. The experiments were carried out at room temperature under normal pressure utilizing aqueous conditions. The structural and morphological aspects of the as prepared samples were investigated by means of XRD and SEM results. The prepared samples were polycrystalline with nanometer-sized grains and identified as galena type cubic structure (FCC). The values of average crystallite size were found to be in the range 22 to 30 nm. The SEM micrographs show variations in morphology. Optical studies revealed that the absorption edges of the films indicated strong blue shifts with respect to bulk sample. In this work, we establish that the cationic precursor sources and in turn the size of the crystallites affects the structural, morphological and optical properties of PbS thin films.

  19. Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

    Directory of Open Access Journals (Sweden)

    Heberto Gómez-Pozos

    2016-01-01

    Full Text Available A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM and secondary ion mass spectroscopy (SIMS, respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.

  20. Preparation of CuIn(S,Se){sub 2} films by PLD of precursor layers and post-annealing and their application to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kawabe, Toshiyuki; Maeda, Tsuyoshi; Wada, Takahiro [Department of Materials Chemistry, Ryukoku University, Seta, Otsu (Japan)

    2017-06-15

    Cu-In-S precursor films were deposited at various substrate temperatures by pulsed laser deposition (PLD). CuIn(S,Se){sub 2} films were prepared by post-annealing the Cu-In-S precursor films in H{sub 2}S and Se atmosphere. CuIn(S,Se){sub 2} solar cells with a device structure of Au/ITO/i-ZnO/CdS/CuIn(S,Se){sub 2}/Mo/soda-lime (SLG) glass were fabricated and characterized. Higher conversion efficiency was obtained for the CuIn(S,Se){sub 2} solar cell with the precursor film deposited at room temperature. The phase and microstructure of the Cu-In-S precursor and the annealed CuIn(S,Se){sub 2} films were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). We found that the quality of the CuIn(S,Se){sub 2} films was strongly affected by the deposition temperature of Cu-In-S precursor films. We discuss the grain growth and sintering in CuIn(S,Se){sub 2} films on the basis of the results of XRD and SEM. The highest conversion efficiency of 6.38% (V{sub oc}= 521 mV, J{sub sc}= 22.6 mA cm{sup -2}, FF = 0.541) was obtained for the CuIn(S,Se){sub 2} solar cell with the precursor film deposited at room temperature and post-annealed at 620 C. The solar cell was analyzed by secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Colloidal Precursors from 'Ball-Milling in Liquid Medium' Process for CuInSe{sub 2} Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Jae Hoon; Kim, Seung Joo [Ajou University, Suwon (Korea, Republic of)

    2010-09-15

    CIS thin film can be fabricated by using the precursor obtained through ball-milling the elemental reagents in liquid media. The amorphous colloidal precursor with good dispersity was prepared in the medium that contains strong base and polar solvent (2 M ethylenediamine in DMF solution as used in this study). The 'ball-milling in liquid medium' method requires only elemental sources as starting materials and a proper solution so that it can be employed without additional processes for separation and purification. As a simple and less-toxic preparative route, this method would be practically available to prepare CIS-related solar cells. CuInSe{sub 2} (CIS) and related chalcopyrite compounds are very promising materials for thin film solar cells due to their favorable band gap, high optical absorption coefficient and long-term stability. CIS-based solar cells have shown the highest conversion efficiency reaching a value of 20%. However, the vacuum-based processes that are used to fabricate CIS thin-films have some drawbacks such as the complexity in process, high production cost and difficulty in scaling up. Recently, several research groups have proposed different non-vacuum deposition processes for CIS solar cell. For example, H. W. Hillhouse et al. prepared the CIS absorber layer by using 'nanocrystal ink method' in which a colloidal nanocrystal ink was obtained from reaction of CuCl, InCl{sub 3} and Se in oleylamine. D. B. Mitzi et al. used a solution-based precursor that was prepared by dissolution of Cu{sub 2}Se, In{sub 2}Se{sub 3}, Ga{sub 2}Se{sub 3} and Se in hydrazine to fabricate the Ga-containing absorber layer, Cu(In,Ga)Se{sub 2}.

  2. Preparation of thin films, with base to precursor materials of type Cu-In-Se elaborated by electrodeposition for the solar cells elaboration

    International Nuclear Information System (INIS)

    Fernandez, A.M.

    1999-01-01

    Thin films of chalcogenide compounds are promising because they have excellent optoelectronic characteristics to be applied in solar cells. In particular, CuInSe 2 and Cd Te thin films have shown high solar to electrical conversion efficiency. However, this efficiency is limited by the method of preparation, in this case, physical vapor deposition techniques are used. In order to increase the area of deposition t is necessary to use chemical methods, for example, electrodeposition technique. In this paper, the preparation of Cu-In-Se precursors thin films by electrochemical method is reported. These precursors were used to build solar cells with 7.9 % of efficiency. (Author)

  3. Precursors for use in vapour and solution phase thermolysis routes to II-VI thin films and nanodispersed oxide materials

    International Nuclear Information System (INIS)

    Chunggaze, M.

    1999-12-01

    Monothiocarbamates M(OSCNEt 2 ) 2 M = Cd (1) Zn (2) analogous to the dithiocarbamates (Et 2 NCS 2 ) 2 M which have been extensively studied for metal-organic chemical vapour deposition (MOCVD), have been prepared as alternative single-source precursors for depositing II-VI semiconducting materials. Structural analysis of (1) revealed a new, O-binucleating, bonding mode for the monothiocarbamato ligand resulting in polymeric chains which are co-aligned to give a distorted close-packed hexagonal array. The mixed alkyl zinc derivative [Et 4 Zn 4 (OSCNEt 2 ) 2 (NEt 2 ) 2 ] is formed as the only isolable product from the reaction of EtZnNEt 2 with carbonyl sulfide and also exhibits a second new bonding mode for the monothiocarbamato ligand in which both the oxygen and sulfur atoms are binucleating. Uniform adherent films of CdS films with various morphologies were grown on GaAs(100) and glass at substrate temperatures between 350-450 deg C. No oxygen incorporation within the films was observed. Mechanistic studies into the decompositional behaviour of the monothiocarbamate precursors in comparison to the dithiocarbamate precursors were investigated by using pyrolysis GC-MS and EI-MS; with GC-MS conditions comparable to those usually used in MOCVD reactors. GC-MS analysis showed that the major decomposition product during the deposition of CdS is Et 2 NC(O)SC(O)NEt 2 . Similar mechanistic studies into the deposition of MSe by MOCVD from the diselenocarbamates M(Se 2 CNEt 2 ) 2 M = Zn (3), Cd (4); M(Se 2 CNMe n Hex) 2 M = Zn (5), Cd (6); and EtZnSe 2 CNEt 2 (7) were carried out in an effort to determine why the symmetric selenocarbamates (3) and (4) deposit films heavily contaminated with selenium in comparison to the asymmetric analogues (5) and (6). The EI-MS of all five selenium compounds revealed similar decomposition pathways, which start with the loss of an alkyl group. However, studies of compounds (1)-(5) by pyrolysis GC-MS show that selenium clusters Se n n = 1

  4. Shadowgraphic investigations into the laser-induced forward transfer of different SnO{sub 2} precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Mattle, Thomas [General Energy Research Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Shaw-Stewart, James [General Energy Research Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Laboratory for Functional Polymers, Empa Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf (Switzerland); Hintennach, Andreas [General Energy Research Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Daimler AG (Mercedes-Benz Cars), Electrochemical Layers, HPC H152, 70176 Stuttgart (Germany); Schneider, Christof W. [General Energy Research Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Lippert, Thomas, E-mail: thomas.lippert@psi.ch [General Energy Research Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland); Wokaun, Alexander [General Energy Research Department, Paul Scherrer Institut, CH-5232 Villigen-PSI (Switzerland)

    2013-08-01

    Laser-induced forward transfer of different SnO{sub 2} precursor films for sensor applications were investigated using time resolved imaging, from 0 to 2 μs after the onset of the ablation process. Transfers of SnCl{sub 2}(acac){sub 2} and SnO{sub 2} nano-particles, both with and without a triazene polymer dynamic release layer (DRL), were investigated and compared to transfers of aluminum films with a triazene polymer DRL. Shockwave speed and flyer speeds at high laser fluences of Φ = 650 mJ/cm{sup 2} and at the lower fluences, suitable for the transfer of functional and well defined pixels were analyzed. No influence of the use of a triazene polymer DRL on shockwave and flyer speed was observed. Material ejected under transfer condition showed a velocity of around 200 m/s with a weak shockwave.

  5. Shadowgraphic investigations into the laser-induced forward transfer of different SnO2 precursor films

    International Nuclear Information System (INIS)

    Mattle, Thomas; Shaw-Stewart, James; Hintennach, Andreas; Schneider, Christof W.; Lippert, Thomas; Wokaun, Alexander

    2013-01-01

    Laser-induced forward transfer of different SnO 2 precursor films for sensor applications were investigated using time resolved imaging, from 0 to 2 μs after the onset of the ablation process. Transfers of SnCl 2 (acac) 2 and SnO 2 nano-particles, both with and without a triazene polymer dynamic release layer (DRL), were investigated and compared to transfers of aluminum films with a triazene polymer DRL. Shockwave speed and flyer speeds at high laser fluences of Φ = 650 mJ/cm 2 and at the lower fluences, suitable for the transfer of functional and well defined pixels were analyzed. No influence of the use of a triazene polymer DRL on shockwave and flyer speed was observed. Material ejected under transfer condition showed a velocity of around 200 m/s with a weak shockwave.

  6. Shadowgraphic investigations into the laser-induced forward transfer of different SnO2 precursor films

    Science.gov (United States)

    Mattle, Thomas; Shaw-Stewart, James; Hintennach, Andreas; Schneider, Christof W.; Lippert, Thomas; Wokaun, Alexander

    2013-08-01

    Laser-induced forward transfer of different SnO2 precursor films for sensor applications were investigated using time resolved imaging, from 0 to 2 μs after the onset of the ablation process. Transfers of SnCl2(acac)2 and SnO2 nano-particles, both with and without a triazene polymer dynamic release layer (DRL), were investigated and compared to transfers of aluminum films with a triazene polymer DRL. Shockwave speed and flyer speeds at high laser fluences of Φ = 650 mJ/cm2 and at the lower fluences, suitable for the transfer of functional and well defined pixels were analyzed. No influence of the use of a triazene polymer DRL on shockwave and flyer speed was observed. Material ejected under transfer condition showed a velocity of around 200 m/s with a weak shockwave.

  7. Sulfide precursor concentration and lead source effect on PbS thin films properties

    International Nuclear Information System (INIS)

    Beddek, L.; Messaoudi, M.; Attaf, N.; Aida, M.S.; Bougdira, J.

    2016-01-01

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  8. Sulfide precursor concentration and lead source effect on PbS thin films properties

    Energy Technology Data Exchange (ETDEWEB)

    Beddek, L.; Messaoudi, M.; Attaf, N. [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Aida, M.S., E-mail: aida_salah2@yahoo.fr [Laboratoire Couche Minces et Interfaces, Université frères Mentouri Constantine, 25000, Constantine (Algeria); Bougdira, J. [Université de Lorraine, Institut Jean Lamour UMR 7198, Vandoeuvre 54506 (France)

    2016-05-05

    Lead sulfide (PbS) thin films were synthesized using chemical bath deposition (CBD). Bath solutions are formed of various concentrations of thiourea, sulfide source, ranged from 0.6 to 1.2 M and two different salts as Pb source (lead acetate and lead nitrate). From the growth mechanism, we inferred that PbS is formed through the ion by ion process when using acetate lead source, while, using nitrate source yields to films growth through the complex-decomposition process. Due to the difference in the involved growth process, lead acetate produces films with larger crystallite size (from 4 to 16 nm), smooth and dense films. However, lead nitrate produces rough films with smaller crystallite size (from 1 to 4 nm). Increasing the thiourea concentration results in crystallinity improvement when using lead acetate and, oppositely, in crystallinity degradation when using lead nitrate. Due to the quantum effect caused by the small crystallite sizes, the films optical gap is varied from 0.5 to 0.9 eV. - Highlights: • PbS thin films were synthesized by chemical bath deposition. • Ion by ion is the growth process when using the acetate lead source. • Deposition process is by complex-decomposition when using nitrate source. • Lead acetate yields to dense films with larger crystallite size. • Lead nitrate produces rough films with smaller crystallite size.

  9. Group 13 β-ketoiminate compounds: gallium hydride derivatives as molecular precursors to thin films of Ga2O3.

    Science.gov (United States)

    Pugh, David; Marchand, Peter; Parkin, Ivan P; Carmalt, Claire J

    2012-06-04

    Bis(β-ketoimine) ligands, [R{N(H)C(Me)-CHC(Me)═O}(2)] (L(1)H(2), R = (CH(2))(2); L(2)H(2), R = (CH(2))(3)), linked by ethylene (L(1)) and propylene (L(2)) bridges have been used to form aluminum, gallium, and indium chloride complexes [Al(L(1))Cl] (3), [Ga(L(n))Cl] (4, n = 1; 6, n = 2) and [In(L(n))Cl] (5, n = 1; 7, n = 2). Ligand L(1) has also been used to form a gallium hydride derivative [Ga(L(1))H] (8), but indium analogues could not be made. β-ketoimine ligands, [Me(2)N(CH(2))(3)N(H)C(R')-CHC(R')═O] (L(3)H, R' = Me; L(4)H, R' = Ph), with a donor-functionalized Lewis base have also been synthesized and used to form gallium and indium alkyl complexes, [Ga(L(3))Me(2)] (9) and [In(L(3))Me(2)] (10), which were isolated as oils. The related gallium hydride complexes, [Ga(L(n))H(2)] (11, n = 3; 12, n = 4), were also prepared, but again no indium hydride species could be made. The complexes were characterized mainly by NMR spectroscopy, mass spectrometry, and single crystal X-ray diffraction. The β-ketoiminate gallium hydride compounds (8 and 11) have been used as single-source precursors for the deposition of Ga(2)O(3) by aerosol-assisted (AA)CVD with toluene as the solvent. The quality of the films varied according to the precursor used, with the complex [Ga(L(1))H] (8) giving by far the best quality films. Although the films were amorphous as deposited, they could be annealed at 1000 °C to form crystalline Ga(2)O(3). The films were analyzed by powder XRD, SEM, and EDX.

  10. Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma

    International Nuclear Information System (INIS)

    Walkiewicz-Pietrzykowska, Agnieszka; Espinos, J. P.; Gonzalez-Elipe, Agustin R.

    2006-01-01

    Siliconelike thin films (i.e., SiO x C y H z ) were prepared in a microwave plasma enhanced chemical vapor deposition reactor from structurally different organosilicon precursors [i.e., hexamethyldisiloxane (HMDSO), dimethylsilane (DMS), and tetramethylsilane (TMS)]. The films were deposited at room temperature by using different oxygen/argon ratios in the plasma gas. By changing the type of precursor and the relative concentration of oxygen in the plasma, thin films with different compositions (i.e., O/C ratio) and properties are obtained. In general, raising the oxygen concentration in the plasma produces the progressive removal of the organic moieties from the films whose composition and structure then approach those of silicon dioxide. The deposition rate was highly dependent on the type of precursor, following the order HMDSO>>DMS>TMS. The polarizabilities, optical band gaps, and surface free energy of the films also depended on the thin film composition and structure. It is proposed that the Si-O bonds existing in HMDSO is the main factor controlling the distinct reactivity of this precursor and is also responsible for the different compositions and properties of the SiO x C y H z thin films prepared with very low or no oxygen in the plasma gas

  11. Electrical and photovoltaic characteristics of CuInSe2 thin films processed by nontoxic Cu–In precursor solutions

    International Nuclear Information System (INIS)

    Choi, Ik Jin; Jang, Jin Woo; Lee, Seung Min; Yeon, Deuk Ho; Jo, Yeon Hwa; Lee, Myung Ho; Cho, Yong Soo; Yun, Jae Ho; Yoon, Kyung Hoon

    2013-01-01

    Nontoxic Cu–In solution-processed CuInSe 2 absorber thin films and resultant photovoltaic cells have been investigated. Acetate-based Cu–In precursors having different Cu/In ratios of 0.8–1.2 were deposited by spin-coating and then selenized in Se atmosphere up to 550 °C. Single tetragonal CuInSe 2 phase was dominantly obtained regardless of Cu/In ratios, with the segregation of Cu 2−x Se secondary phase only in the case of Cu-rich films as evidenced by Raman spectra. The films with the 1.1 ratio demonstrated a larger grain size of ∼1.06 µm with an increased carrier concentration of ∼1.7 × 10 18 cm −3 and a decreased band gap of ∼1.02 eV, compared to the values obtained for Cu-deficient absorber films. The resultant best cell efficiency was ∼3.1% for the absorber having the 1.1 ratio, suggesting a potential of this simple spin-coating method as an alternative to typical vacuum processes. (paper)

  12. Comparative study of ZnSe thin films deposited from modified chemical bath solutions with ammonia-containing and ammonia-free precursors

    International Nuclear Information System (INIS)

    Chen Liangyan; Zhang Daoli; Zhai Guangmei; Zhang Jianbing

    2010-01-01

    Ammonia is one of the complexing agents which are the most commonly used in the precursors of ZnSe thin films by chemical bath deposition, but its high volatility may be harmful to human beings and environments. In our experiments, ZnSe films were obtained from modified chemical solutions with ammonia-containing and ammonia-free precursors. X-ray diffraction, field-emission scanning electron microscope (FSEM), and absorption spectrum were applied to investigate the microstructure, morphology and optical properties of the samples obtained from both growth conditions, which were investigated in this work. The ammonia-free chemical bath deposited ZnSe films showed comparable properties with the ammonia-containing ones, indicating that ZnSe films from ammonia-free chemical solution may be preferred buffer layer in thin film solar cells with less environmental contamination.

  13. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    International Nuclear Information System (INIS)

    Cloud, Andrew N.; Abelson, John R.; Davis, Luke M.; Girolami, Gregory S.

    2014-01-01

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300 °C from three recently synthesized M[N(t-Bu) 2 ] 2 precursors, where M = Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200 °C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18 nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities

  14. Process for forming epitaxial perovskite thin film layers using halide precursors

    Science.gov (United States)

    Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

    2001-01-01

    A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

  15. X-ray scattering study of thermal nanopore templating in hybrid films of organosilicate precursor and reactive four-armed porogen

    International Nuclear Information System (INIS)

    Yoon, Jinhwan; Heo, Kyuyoung; Oh, Weontae; Jin, Kyeong Sik; Jin, Sangwoo; Kim, Jehan; Kim, Kwang-Woo; Chang, Taihyun; Ree, Moonhor

    2006-01-01

    The miscibility and the mechanism for thermal nanopore templating in films prepared from spin-coating and subsequent drying of homogenous solutions of curable polymethylsilsesquioxane dielectric precursor and thermally labile, reactive triethoxysilyl-terminated four-armed poly(ε-caprolactone) porogen were investigated in detail by in situ two-dimensional grazing incidence small-angle x-ray scattering analysis. The dielectric precursor and porogen components in the film were fully miscible. On heating, limited aggregations of the porogen, however, took place in only a small temperature range of 100-140 deg. C as a result of phase separation induced by the competition of the curing and hybridization reactions of the dielectric precursor and porogen; higher porogen loading resulted in relatively large porogen aggregates and a greater size distribution. The developed porogen aggregates underwent thermal firing above 300 deg. C without further growth and movement, and ultimately left their individual footprints in the film as spherical nanopores

  16. Orientation of Zn3P2 films via phosphidation of Zn precursors

    Science.gov (United States)

    Katsube, Ryoji; Nose, Yoshitaro

    2017-02-01

    Orientation of solar absorber is an important factor to achieve high efficiency of thin film solar cells. In the case of Zn3P2 which is a promising absorber of low-cost and high-efficiency solar cells, (110)/(001) orientation was only reported in previous studies. We have successfully prepared (101)-oriented Zn3P2 films by phosphidation of (0001)-oriented Zn films at 350 °C. The phosphidation mechanism of Zn is discussed through STEM observations on the partially-reacted sample and the consideration of the relationship between the crystal structures of Zn and Zn3P2 . We revealed that (0001)-oriented Zn led to nucleation of (101)-oriented Zn3P2 due to the similarity in atomic arrangement between Zn and Zn3P2 . The electrical resistivity of the (101)-oriented Zn3P2 film was lower than those of (110)/(001)-oriented films, which is an advantage of the phosphidation technique to the growth processes in previous works. The results in this study demonstrated that well-conductive Zn3P2 films could be obtained by controlling orientations of crystal grains, and provide a guiding principle for microstructure control in absorber materials.

  17. Alkynyl substituted carboranes as precursors to boron carbide thin films, fibers and composites

    International Nuclear Information System (INIS)

    Johnson, S.E.; Yang, X.; Hawthorne, M.F.; Mackenzie, J.D.; Thorne, K.J.; Zheng, H.

    1992-01-01

    In this paper the use of alkynyl substituted derivatives of o-carborane as precursors to boron containing ceramics is described. These compounds undergo a thermally or photochemically induced polymerization to afford cross linked polyakynyl-o-carborane derivatives. The increase in molecular weight should allow for increased Tg's and the retention of modelled polymer preforms. In this report, these modification reactions are described. In addition, the retention of molded polymer preforms were analyzed after UV exposure and inert atmosphere pyrolysis

  18. Insight into excimer laser crystallization exploiting ellipsometry: Effect of silicon film precursor

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)], E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, Maria M.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Mariucci, Luigi; Fortunato, Guglielmo [IFN-CNR, Via Cineto Romano, 42 - 00156 Rome (Italy)

    2007-07-16

    The optical diagnostic of spectroscopic ellipsometry is shown to be an effective tool to investigate the mechanism of excimer laser crystallization (ELC) of silicon thin films. A detailed spectroscopic ellipsometric investigation of the microstructures of polycrystalline Si films obtained on SiO{sub 2}/Si wafers by ELC of a-Si:H and nc-Si films deposited, respectively, by SiH{sub 4} plasma enhanced chemical vapor deposition (PECVD) and SiF{sub 4}-PECVD is presented. It is shown that ellipsometric spectra of the pseudodielectric function of polysilicon thin films allows to discern the three different ELC regimes of partial melting, super lateral growth and complete melting. Exploiting ellipsometry and atomic force microscopy, it is shown that ELC of nc-Si has very low energy density threshold of 95 mJ/cm{sup 2} for complete melting, and that re-crystallization to large grains of {approx} 2 {mu}m can be achieved by multi-shot irradiation at an energy density as low as 260 mJ/cm{sup 2} when using nc-Si when compared to 340 mJ/cm{sup 2} for the ELC of a-Si films.

  19. Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

    Directory of Open Access Journals (Sweden)

    Chun-Yao Hsu

    2013-01-01

    Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

  20. The formation of CuInSe{sub 2}-based thin-film solar cell absorbers from alternative low-cost precursors

    Energy Technology Data Exchange (ETDEWEB)

    Jost, S.

    2008-01-18

    This work deals with real-time investigations concerning the crystallisation process of CuInSe{sub 2}-based thin-film solar cell absorbers while annealing differently produced and composed ''low-cost'' precursors. Various types of precursors have been investigated concerning their crystallisation behaviour. Three groups of experiments have been performed: (i) Investigations concerning the crystallisation process of the quaternary chalcopyrite Cu(In,Al)Se{sub 2} and Cu(In,Al)S{sub 2}, (ii) investigations concerning the formation process of the compound semiconductor CuInSe{sub 2} from electroplated precursors, and (iii) investigations concerning the crystallisation of Cu(In,Ga)Se{sub 2} using precursors with thermally evaporated indium. A specific sample surrounding has been constructed, which enables to perform time-resolved angle-dispersive X-ray powder diffraction experiments during the annealing process of precursor samples. A thorough analysis of subsequently recorded diffraction patterns using the Rietveld method provides a detailed knowledge about the semiconductor crystallisation process while annealing. Based on these fundamental investigations, conclusions have been drawn concerning an adaptation of the precursor deposition process in order to optimise the final solar cell results. The investigations have shown, that one class of electroplated precursors shows a crystallisation behaviour identical to the one known for vacuum-deposited precursors. The investigations concerning the crystallisation process of the quaternary chalcopyrite Cu(In,Al)Se{sub 2} revealed, that the chalcopyrite forms from the ternary selenide (Al,In){sub 2}Se{sub 3} and Cu{sub 2}Se at elevated process temperatures. This result is used to explain the separation of the absorber layer into an aluminum-rich and an indium-rich chalcopyrite phase, which has been observed at processed Cu(In,Al)Se{sub 2} absorbers from several research groups. In addition, differences

  1. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Science.gov (United States)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  2. Effect of precursor concentration and film thickness deposited by layer on nanostructured TiO2 thin films

    Science.gov (United States)

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    Sol-gel spin coating method is used in the production of nanostructured TiO2 thin film. The surface topology and morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior, hence the conductivity of the thin film. The solution concentration will be varied from 14.0 to 0.01wt% with 0.02wt% interval where the last concentration of 0.02 to 0.01wt% have 0.01wt% interval to find which concentrations have the highest conductivity then the optimized concentration's sample were chosen for the thickness parameter based on layer by layer deposition from 1 to 6 layer. Based on the result, the lowest concentration of TiO2, the surface becomes more uniform and the conductivity will increase. As the result, sample of 0.01wt% concentration have conductivity value of 1.77E-10 S/m and will be advanced in thickness parameter. Whereas in thickness parameter, the 3layer deposition were chosen as its conductivity is the highest at 3.9098E9 S/m.

  3. Cathode and ion-luminescence of Eu:ZnO thin films prepared by reactive magnetron sputtering and plasma decomposition of non-volatile precursors

    Energy Technology Data Exchange (ETDEWEB)

    Gil-Rostra, Jorge [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain); Ferrer, Francisco J. [Centro Nacional de Aceleradores, CSIC, Univ. Sevilla, Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Martín, Inocencio R. [Departamento de Física Fundamental y Experimental, Electrónica y Sistemas, U. La Laguna, C/Astrofísico Francisco Sánchez s/n, E-38206 La Laguna, Santa Cruz de Tenerife (Spain); González-Elipe, Agustín R.; Yubero, Francisco [Instituto de Ciencia de Materiales de Sevilla, CSIC, Univ. Sevilla, C/Américo Vespucio 49, E-41092 Sevilla (Spain)

    2016-10-15

    This paper reports the luminescent behavior of Eu:ZnO thin films prepared by an one-step procedure that combines reactive magnetron sputtering deposition of ZnO with the plasma activated decomposition of a non-volatile acetylacetonate precursor of Eu sublimated in an effusion cell. Chemical composition and microstructure of the Eu:ZnO thin films have been characterized by several methods and their photo-, cathode- and ion-luminescent properties studied as a function of Eu concentration. The high transparency and well controlled optical properties of the films have demonstrated to be ideal for the development of cathode- and ion- luminescence sensors.

  4. Surface modification of blood-contacting biomaterials by plasma-polymerized superhydrophobic films using hexamethyldisiloxane and tetrafluoromethane as precursors

    Energy Technology Data Exchange (ETDEWEB)

    Hsiao, Chaio-Ru [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Rd., Seatwen District, Taichung City 40724, Taiwan (China); Lin, Cheng-Wei [Department of Dental Technology and Materials Science, Central Taiwan University of Science and Technology, No. 666, Buzih Rd., Beitun District, Taichung City 40601, Taiwan (China); Chou, Chia-Man, E-mail: cmchou@vghtc.gov.tw [Department of Surgery, Taichung Veterans General Hospital, No. 1650, Sec. 4, Taiwan Boulevard, Seatwen District, Taichung City 40705, Taiwan (China); Department of Medicine, National Yang-Ming University, No. 155, Sec. 2, Linong Street, Beitou District, Taipei City 11221, Taiwan (China); Chung, Chi-Jen, E-mail: cjchung@seed.net.tw [Department of Dental Technology and Materials Science, Central Taiwan University of Science and Technology, No. 666, Buzih Rd., Beitun District, Taichung City 40601, Taiwan (China); He, Ju-Liang [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Rd., Seatwen District, Taichung City 40724, Taiwan (China)

    2015-08-15

    Highlights: • Biomaterials modified by nanoparticle-containing plasma polymerized films. • A superhydrophoic film was obtained, and the properties of the coating were examined. • In vitro blood compatibility tests revealed neither platelet adhesion nor fibrinogen adsorption. • Surface modification technology of medical devices: non-cytotoxic and no blood clot formation. - Abstract: This paper proposes a plasma polymerization system that can be used to modify the surface of the widely used biomaterial, polyurethane (PU), by employing low-cost hexamethyldisiloxane (HMDSO) and tetrafluoromethane (CF{sub 4}) as precursors; this system features a pulsed-dc power supply. Plasma-polymerized HMDSO/CF{sub 4} (pp-HC) with coexisting micro- and nanoscale morphology was obtained as a superhydrophobic coating material by controlling the HMDSO/CF{sub 4} (f{sub H}) monomer flow ratio. The developed surface modification technology can be applied to medical devices, because it is non-cytotoxic and has favorable hemocompatibility, and no blood clots form when the device surface direct contacts. Experimental results reveal that the obtained pp-HC films contained SiO{sub x} nanoparticles randomly dispersed on the micron-scale three-dimensional network film surface. The −CF functional group, −CF{sub 2} bonding, and SiO{sub x} were detected on the film surface. The maximal water contact angle of the pp-HC coating was 161.2°, apparently attributable to the synergistic effect of the coexisting micro- and nanoscale surface morphology featuring a low surface-energy layer. The superhydrophobic and antifouling characteristics of the coating were retained even after it was rubbed 20 times with a steel wool tester. Results of in vitro cytotoxicity, fibrinogen adsorption, and platelet adhesion tests revealed favorable myoblast cell proliferation and the virtual absence of fibrinogen adsorption and platelet adhesion on the pp-HC coated specimens. These quantitative findings imply

  5. Surface characterization of III-V MOCVD films from heterocyclic single-source precursors; Oberflaechencharakterisierung von III-V MOCVD-Filmen aus heterozyklischen Single Source Precursoren

    Energy Technology Data Exchange (ETDEWEB)

    Seemayer, Andreas

    2009-07-13

    In the present thesis the sublimation and evaporation properties of heterocyclic gallium and antimony containing single-source precursors as well as the chemical composition and morphology of the films fabricated from this were studied. The single-source precursors available by a new synthesis route were characterized concerning their evaporation properties and the obtained films studied surface-physically. By this way the process parameters were optimized and the applicability of the single-source precursors in HV-MOCVD processes studied. By evaporation experiments in the UHV it could be shown that thereby lighter ligands like ethyl- and methyl-groups lead to a lower contamination of the reaction space with carbon containing molecules. Furthermore it was expected that the 6-rings synthetized with short ligands exhibit a high stability. This however could not be confirmed. By unwanted parasitary reactions in the gaseous phase respectively dissociative sublimation in the gaseous phase a deposition of GaSb with these precursors was not possible. The 4-ring stabilized with tertiary-butyl and ethyl-groups caused in the evaporation the largest contamination of the gaseous phase, becauselonger-chain hydrocarbons exhibil only a bad pump cross section. By parasitary reactions originating elementary antimony is detectable in the gaseous phase. The films were studied concerning their chemical composition and their transport- respectively storage-conditioned surface contamination. Furthermore it has become clear that not only a purely synthetized precursor substance but also the reactor design is deciding for a successful deposition and a high film quality. First by successive optimization of the evaporation geometry it was possible to reduce the roughness of the produced GaSb films down to about 10 nm-30 nm.

  6. Analysis of mechanical properties of N2in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

    International Nuclear Information System (INIS)

    Kim, Kang-San; Han, Ki-Bong; Chung, Gwiy-Sang

    2010-01-01

    This paper describes the mechanical properties of poly (polycrystalline) 3C-SiC thin films with N 2 in situ doping. In this work, in situ doped poly 3C-SiC film was deposited by using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200 deg. C using single-precursor hexamethyildisilane: Si 2 (CH 3 ) 6 (HMDS) as Si and C precursors, and 0∼100 sccm N 2 as the dopant source gas. The mechanical properties of doped poly 3C-SiC thin films were measured by nano-indentation. Young's modulus and hardness were measured to be 285 and 35 GPa at 0 sccm N 2 , respectively. Young's modulus and hardness decreased with increasing N 2 flow rate. Surface morphology was evaluated by atomic force microscopy (AFM) according to N 2 flow rate.

  7. Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing

    Directory of Open Access Journals (Sweden)

    TSUNG-WEI CHANG

    2014-02-01

    Full Text Available In this study, copper indium selenide (CIS films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu11In9 binary compounds. After deposition of the Se layer, annealing was employed to form chalcopyrite CIS. However, synthesis of CIS from Cu11In9 requires sufficient thermal energy. Annealing temperature and time were investigated to grow high quality CIS film. Various electrodeposition conditions were investigated to achieve the proper atomic ratio of CIS. The properties of the CIS films were characterized by scanning electron microscopy (SEM, X-ray Diffraction (XRD, and Raman spectra.

  8. Impact of reduced graphene oxide on MoS{sub 2} grown by sulfurization of sputtered MoO{sub 3} and Mo precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Pacley, Shanee, E-mail: shanee.pacley@us.af.mil; Brausch, Jacob; Beck-Millerton, Emory [U.S. Air Force Research Laboratory (AFRL)/Wright Patterson Air Force Base, Wright Patterson, Ohio 45433-7707 (United States); Hu, Jianjun; Jespersen, Michael [University of Dayton Research Institute, 300 College Park, Dayton, Ohio 45469 (United States); Hilton, Al [Wyle Laboratories, 4200 Colonel Glenn Hwy, Beavercreek, Ohio 45431 (United States); Waite, Adam [University Technology Corporation, 1270 N Fairfield Rd., Beavercreek, Ohio 45432 (United States); Voevodin, Andrey A. [Department of Materials Science and Engineering, University of North Texas, 1155 Union Circle, Denton, Texas 76203 (United States)

    2016-07-15

    Monolayer molybdenum disulfide (MoS{sub 2}), a two dimensional semiconducting dichalcogenide material with a bandgap of 1.8–1.9 eV, has demonstrated promise for future use in field effect transistors and optoelectronics. Various approaches have been used for MoS{sub 2} processing, the most common being chemical vapor deposition. During chemical vapor deposition, precursors such as Mo, MoO{sub 3}, and MoCl{sub 5} have been used to form a vapor reaction with sulfur, resulting in thin films of MoS{sub 2}. Currently, MoO{sub 3} ribbons and powder, and MoCl{sub 5} powder have been used. However, the use of ribbons and powder makes it difficult to grow large area-continuous films. Sputtering of Mo is an approach that has demonstrated continuous MoS{sub 2} film growth. In this paper, the authors compare the structural properties of MoS{sub 2} grown by sulfurization of pulse vapor deposited MoO{sub 3} and Mo precursor films. In addition, they have studied the effects that reduced graphene oxide (rGO) has on MoS{sub 2} structure. Reports show that rGO increases MoS{sub 2} grain growth during powder vaporization. Herein, the authors report a grain size increase for MoS{sub 2} when rGO was used during sulfurization of both sputtered Mo and MoO{sub 3} precursors. In addition, our transmission electron microscopy results show a more uniform and continuous film growth for the MoS{sub 2} films produced from Mo when compared to the films produced from MoO{sub 3}. Atomic force microscopy images further confirm this uniform and continuous film growth when Mo precursor was used. Finally, x-ray photoelectron spectroscopy results show that the MoS{sub 2} films produced using both precursors were stoichiometric and had about 7–8 layers in thickness, and that there was a slight improvement in stoichiometry when rGO was used.

  9. Effect of Precursors on Key Opto-electrical Properties of Successive Ion Layer Adsorption and Reaction-Prepared Al:ZnO Thin Films

    Science.gov (United States)

    Kumar, K. Deva Arun; Valanarasu, S.; Ganesh, V.; Shkir, Mohd.; Kathalingam, A.; AlFaify, S.

    2018-02-01

    Aluminum-doped zinc oxide (Al:ZnO) thin films were deposited on glass substrates by successive ion layer adsorption and reaction (SILAR) method using different precursors. This inexpensive SILAR method involves dipping of substrate sequentially in zinc solution, de-ionized water and ethylene glycol in multiple cycles. Prepared films were investigated by x-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), optical absorption, photoluminescence (PL), Raman spectroscopy and electrical studies. XRD study confirmed incorporation of aluminum in ZnO lattice with a polycrystalline hexagonal wurtzite structure of the films. The crystallite size determined by the Scherrer equation showed an increase from 28 nm to 35 nm for samples S1 to S4, respectively. SEM study showed smooth morphology with homogeneous distribution of particles. From the AFM images, the surface roughness was found to change according to precursors. For the optical analysis, the zinc chloride precursor showed high optical transmittance of about 90% in the visible range with a band gap value 3.15 eV. The room-temperature PL spectra exhibited a stronger violet emission peak at 420 nm for all the prepared samples. The Raman spectra showed a peak around 435 cm-1 which could be assigned to non-polar optical phonons (E2-high) mode AZO films of a ZnO wurtzite structure. Hall effect measurements showed n-type conductivity with low resistivity ( ρ) and high carrier concentrations ( n) of 2.39 × 10-3 Ω-cm and 8.96 × 1020 cm-3, respectively, for the film deposited using zinc chloride as precursor. The above properties make the prepared AZO film to be regarded as a very promising electrode material for fabrication of optoelectronic devices.

  10. Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors

    Energy Technology Data Exchange (ETDEWEB)

    Araki, Hideaki; Kubo, Yuki; Jimbo, Kazuo; Maw, Win Shwe; Katagiri, Hironori; Yamazaki, Makoto; Oishi, Koichiro; Takeuchi, Akiko [Nagaoka National College of Technology, 888 Nishikatakai, Nagaoka, Niigata 940-8532 (Japan)

    2009-05-15

    Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were prepared by sulfurization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were deposited on Mo-coated glass substrates in a one-step process from an electrolyte containing copper (II) sulfate pentahydrate, zinc sulfate heptahydrate, tin (II) chloride dehydrate and tri-sodium citrate dehydrate. The precursors were sulfurized by annealing with sulfur at temperatures of 580 C and 600 C in an N{sub 2} atmosphere. X-ray diffraction peaks attributable to CZTS were detected in the sulfurized films. Photovoltaic cells with the structure glass/Mo/CZTS/ CdS/ZnO:Al/Al were fabricated using the CZTS films by sulfurizing the electrodeposited precursors. The best photovoltaic cell performance was obtained with Zn-rich samples. An open-circuit voltage of 540 mV, a short-circuit current of 12.6 mA/cm{sup 2} and an efficiency of 3.16% were achieved. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective

    International Nuclear Information System (INIS)

    Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W.; Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.

    2009-01-01

    Thin-film solar cells based on Cu 2 ZnSnS 4 (CZTS) absorbers were fabricated successfully by solid-state reaction in H 2 S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm 2 ) efficiency of 3.4% is achieved (V oc = 563 mV, j sc = 14.8 mA/cm 2 , FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 μm. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu 2 SnS 3 , close to the interface Mo/CZTS

  12. Gallium hydride complexes stabilised by multidentate alkoxide ligands: precursors to thin films of Ga2O3 at low temperatures.

    Science.gov (United States)

    Pugh, David; Bloor, Leanne G; Parkin, Ivan P; Carmalt, Claire J

    2012-05-07

    The donor-functionalised alkoxides {Me(3-x)N(CH(2)CH(2)O)(x)} (L(x); x = 1, 2) have been used to form gallium hydride complexes [{GaH(2)(L(1))}(2)] and [{GaH(L(2))}(2)] that are stable and isolable at room temperature. Along with a heteroleptic gallium tris(alkoxide) complex [Ga(L(1))(3)] and the dimeric complex [{GaMe(L(2))}(2)], these compounds have been used as single-source precursors for the deposition of Ga(2)O(3) by aerosol-assisted chemical vapour deposition (AACVD) with toluene as solvent. The resulting films were mostly transparent, indicating low levels of carbon contamination, and they were also mainly amorphous. However, [Ga(L(1))(3)] did contain visibly crystalline material deposited at a substrate temperature of 450 °C, by far the lowest ever observed for the CVD of gallium oxide. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Annealing of RF-magnetron sputtered SnS{sub 2} precursors as a new route for single phase SnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sousa, M.G., E-mail: martasousa@ua.pt [AIN, I3N and Departamento de Física, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Cunha, A.F. da, E-mail: antonio.cunha@ua.pt [AIN, I3N and Departamento de Física, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Fernandes, P.A., E-mail: pafernandes@ua.pt [AIN, I3N and Departamento de Física, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Departamento de Física, Instituto Superior de Engenharia do Porto, Instituto Politécnico do Porto, Rua Dr. António Bernardino de Almeida 431, 4200-072 Porto (Portugal)

    2014-04-01

    Tin sulphide thin films have been grown on soda-lime glass substrates through the annealing of RF-magnetron sputtered SnS{sub 2} precursors. Three different approaches to the annealing were compared and the resulting films thoroughly studied. One series of precursors was annealed in a tubular furnace directly exposed to a flux of sulphur vapour plus forming gas, N{sub 2} + 5%H{sub 2}, and at a constant pressure of 500 mbar. The other two series of identical precursors were annealed in the same furnace but inside a graphite box with and without elemental sulphur evaporation again in the presence of N{sub 2} + 5%H{sub 2} and at the same pressure as for the sulphur flux experiments. Different maximum annealing temperatures for each set of samples, in the range of 300–570 °C, were tested to study their effects on the properties of the final films. The resulting phases were structurally investigated by X-Ray Diffraction (XRD) and Raman spectroscopy. Annealing of SnS{sub 2} precursors in sulphur flux produced films where SnS{sub 2} was dominant for temperatures up to 480 °C. Increasing the temperature to 530 °C and 570 °C led to films where the dominant phase became Sn{sub 2}S{sub 3}. Annealing of SnS{sub 2} precursors in a graphite box with sulphur vapour at temperatures in the range between 300 °C and 480 °C the films are multi-phase, containing Sn{sub 2}S{sub 3}, SnS{sub 2} and SnS. For high annealing temperatures of 530 °C and 570 °C the films have SnS as the dominant phase. Annealing of SnS{sub 2} precursors in a graphite box without sulphur vapour at 300 °C and 360 °C the films are essentially amorphous, at 420 °C SnS{sub 2} is the dominant phase. For temperatures of 480 °C and 530 °C SnS is the dominant phase but also same residual SnS{sub 2} and Sn{sub 2}S{sub 3} phases are observed. For annealing at 570 °C, according to the XRD results the films appear to be single phase SnS. The composition was studied using energy dispersive spectroscopy being

  14. Investigation of gallium redistribution processes during Cu(In,Ga)Se{sub 2} absorber formation from electrodeposited/annealed oxide precursor films

    Energy Technology Data Exchange (ETDEWEB)

    Sidali, T., E-mail: tarik.sidali@edf.fr; Duchatelet, A.; Chassaing, E.; Lincot, D.

    2015-05-01

    A way to prepare metallic precursors for CuIn{sub 1−x},Ga{sub x}Se{sub 2} (CIGS) solar cells has been recently introduced leading to efficiencies above 12.4%. It consists in the electrodeposition of Cu-In-Ga mixed oxides in an acidic nitrate aqueous solution followed by thermal reduction and selenization. This paper investigates, in a first part, the nucleation and growth mechanisms taking place during the co-electrodeposition of Cu-In-Ga oxide/hydroxide film. Scanning Electron Microscope observations coupled to Energy Dispersive X-ray spectrometry point out that the deposition is initiated by the formation of metallic copper nuclei. These nuclei enable the growth of Cu-In-Ga oxide film. This observation confirms that freshly deposited copper catalyzes nitrate reduction leading to an increase in the surface pH enabling the precipitation of the Cu-In-Ga hydroxides. In a second part, precursor films were elaborated with increasing Ga(NO{sub 3}){sub 3} concentration. After reduction of the films in hydrogen and selenization heat treatments, X-ray diffraction analysis shows the incorporation of Ga into the CIGS phase with increasing Ga content in the optimal composition range for photovoltaic applications (x = 0.25-0.34). Gallium composition profiles are evidenced in the films with a tendency to higher concentration near the Mo surface. Increasing annealing temperature allows a better homogenization of Ga in the film. The consequences are correlated to optoelectronic measurements (Eg and cell efficiency) with bandgap measurement and cell efficiencies (10 to 12%). - Highlights: • Electrodeposition starts with copper nucleation. • Gallium content in the precursor is tuned by Ga(III) concentration. • Increasing selenization temperature promotes Ga homogenization in CIGS.

  15. Composition controlled preparation of Cu–Zn–Sn precursor films for Cu{sub 2}ZnSnS{sub 4} solar cells using pulsed electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Wenping; Ren, Xiaodong; Zi, Wei; Jia, Lujian [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, 116023 (China)

    2015-11-25

    A pulsed electrodeposition technique is developed to prepare Cu–Zn–Sn (CZT) precursor films for the Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cells. The CZT precursor films are co-deposited on Mo-coated substrate using a cyanide-free electrolyte containing Zn (II) and Sn (II) salts. During the deposition, CuSO{sub 4} solution is supplied at controlled rate using a peristaltic pump to effectively regulate Cu{sup 2+} concentration. In addition, C{sub 6}H{sub 5}Na{sub 3}O{sub 7} is used as a coordination ligand to further balance activities of the Cu{sup 2+}, Sn{sup 2+} and Zn{sup 2+}. The CZTS films are then prepared using a sulfurization process to convert the electrodeposited CZT precursors at 580 °C in a sulphur atmosphere. The annealed thin films are characterized by X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM), EDAX and X-ray photoelectron spectroscopy (XPS) techniques for their structural, morphological, compositional and chemical properties. It is found that the addition rate of Cu (II) has significant effects on the properties of the CZTS thin films. The CZTS film prepared using the optimized copper addition rate (0.15 ml/min) shows pure kesterite phase, Cu-poor and Zn-rich composition, compact morphology and good band gap ∼1.45 eV. Solar cells using the structure glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al achieves a respectable external quantum efficiency and solar cell efficiency. - Highlights: • Developed a composition controlled pulsed electrodeposition for CZTS solar cells. • Electrochemistry and CZT composition regulated by measured Cu supply rate. • Complex chemistry used to regulate ion activities and electrodeposition. • Achieved a respectable CZTS solar cell quantum efficiency.

  16. Impact of Reduced Graphene Oxide on MoS2 Grown by Sulfurization of Sputtered MoO3 and Mo Precursor Films (Postprint)

    Science.gov (United States)

    2016-05-26

    1,2 intercalation assisted exfoliation,8–11 physical vapor deposition (PVD),12,13 and a wet chemistry approach involving thermal decomposition of a... annealed MoO3, MoS2 films S1 (MoS2 using Mo precursor), S2 (MoS2 using MoO3 precursor), S1r (MoS2 using Mo pre- cursor and rGO), and S2r (MoS2 using...MoO3 precursor and rGO). The annealed MoO3 (a) shows Mo(IV) peaks which are indicative of MoO2, and Mo(VI) peaks that occur when MoO3 is present. Both

  17. Cu2ZnSnSe4 Thin Film Solar Cell with Depth Gradient Composition Prepared by Selenization of Sputtered Novel Precursors.

    Science.gov (United States)

    Lai, Fang-I; Yang, Jui-Fu; Chen, Wei-Chun; Kuo, Shou-Yi

    2017-11-22

    In this study, we proposed a new method for the synthesis of the target material used in a two stage process for preparation of a high quality CZTSe thin film. The target material consisting of a mixture of Cu x Se and Zn x Sn 1-x alloy was synthesized, providing a quality CZTSe precursor layer for highly efficient CZTSe thin film solar cells. The CZTSe thin film can be obtained by annealing the precursor layers through a 30 min selenization process under a selenium atmosphere at 550 °C. The CZTSe thin films prepared by using the new precursor thin film were investigated and characterized using X-ray diffraction, Raman scattering, and photoluminescence spectroscopy. It was found that diffusion of Sn occurred and formed the CTSe phase and Cu x Se phase in the resultant CZTSe thin film. By selective area electron diffraction transmission electron microscopy images, the crystallinity of the CZTSe thin film was verified to be single crystal. By secondary ion mass spectroscopy measurements, it was confirmed that a double-gradient band gap profile across the CZTSe absorber layer was successfully achieved. The CZTSe solar cell with the CZTSe absorber layer consisting of the precursor stack exhibited a high efficiency of 5.46%, high short circuit current (J SC ) of 37.47 mA/cm 2 , open circuit voltage (V OC ) of 0.31 V, and fill factor (F.F.) of 47%, at a device area of 0.28 cm 2 . No crossover of the light and dark current-voltage (I-V) curves of the CZTSe solar cell was observed, and also, no red kink was observed under red light illumination, indicating a low defect concentration in the CZTSe absorber layer. Shunt leakage current with a characteristic metal/CZTSe/metal leakage current model was observed by temperature-dependent I-V curves, which led to the discovery of metal incursion through the CdS buffer layer on the CZTSe absorber layer. This leakage current, also known as space charge-limited current, grew larger as the measurement temperature increased and

  18. Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

    Directory of Open Access Journals (Sweden)

    Imyhamy M. Dharmadasa

    2017-01-01

    Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

  19. Investigation of thermal and hot-wire chemical vapor deposition copper thin films on TiN substrates using CupraSelect as precursor.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak.

  20. Spin-on Bi4Sr3Ca3Cu4O16μ/sub x/ superconducting thin films from citrate precursors

    International Nuclear Information System (INIS)

    Furcone, S.L.; Chiang, Y.

    1988-01-01

    Thin films in the Bi-Sr-Ca-Cu-O system have been synthesized from homogeneous liquid citrate precursors by a spin-coating and pyrolysis method. Films prepared on SrTiO 3 substrates of [100] orientation show strongly textured orientations with the c axis of the predominant Bi 4 Sr 3 Ca 3 Cu 4 O 16 μ/sub x/ phase normal to the film plane. In a single coating and firing, crack-free films of 0.2--0.5 μm thickness are obtained. For films fired to peak temperatures of 850--875 0 C, linearly decreasing resistance with temperature is observed, with rho (300 K)∼460 μΩ cm and rho (300 K)rho (100 K)∼2.4. Clear onsets of superconductivity are observed at 90--100 K, with occasional films showing smaller resistant drops at 110--120 K. For all films, T/sub c/ (R = 0) occurs in the range 70--75 K. High critical current densities at 4.2 K of 5--8 x 10 5 Acm 2 are measured by direct transport

  1. Structural properties of In2Se3 precursor layers deposited by spray pyrolysis and physical vapor deposition for CuInSe2 thin-film solar cell applications

    International Nuclear Information System (INIS)

    Reyes-Figueroa, P.; Painchaud, T.; Lepetit, T.; Harel, S.; Arzel, L.; Yi, Junsin; Barreau, N.; Velumani, S.

    2015-01-01

    The structural properties of In 2 Se 3 precursor thin films grown by chemical spray pyrolysis (CSP) and physical vapor deposition (PVD) methods were compared. This is to investigate the feasibility to substitute PVD process of CuInSe 2 (CISe) films by CSP films as precursor layer, thus decreasing the production cost by increasing material-utilization efficiency. Both films of 1 μm thickness were deposited at the same substrate temperature of 380 °C. X-ray diffraction and Raman spectra confirm the formation of γ-In 2 Se 3 crystalline phase for both films. The PVD and CSP films exhibited (110) and (006) preferred orientations, respectively. The PVD films showed a smaller full width at half maximum value (0.09°) compared with CSP layers (0.1°). Films with the same crystalline phase but with different orientations are normally used in the preparation of high quality CISe films by 3-stage process. Scanning electron microscope cross-section images showed an important difference in grain size with well-defined larger grains of size 1–2 μm in the PVD films as compared to CSP layers (600 nm). Another important characteristic that differentiates the two precursor films is the oxygen contamination. X-ray photoelectron spectroscopy showed the presence of oxygen in CSP films. The oxygen atoms could be bonded to indium by replacing Se vacancies, which are formed during CSP deposition. Taking account of the obtained results, such CSP films can be used as precursor layer in a PVD process in order to produce CISe absorber films. - Highlights: • To find the intricacies involved in spray pyrolysis (CSP) and physical vapor (PVD) deposition. • Comparison of CSP and PVD film formations — especially in structural properties. • Feasibility to substitute CSP (cheaper) films for PVD in the manufacturing process. • Decreasing the global production cost of Cu(In,Ga)Se 2 devices in the 3-stage process

  2. Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

    Science.gov (United States)

    Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

    2013-03-01

    A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

  3. The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

    International Nuclear Information System (INIS)

    Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R.; Voss, T.; Schulze, J.; Kirbs, A.; Ennaoui, A.; Lux-Steiner, M.; Weber, A.; Koetschau, I.; Schock, H.-W.

    2009-01-01

    The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu 2 ZnSnS 4 based thin film solar cells. A kesterite based solar cell (size 0.5 cm 2 ) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu 2 SnS 3 and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu 3 Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu 6 Sn 5 and Sn phases were detected. The formation mechanism of Cu 2 SnS 3 involves the binary sulphides Cu 2-x S and SnS 2 in the absence of the binary precursor phase Cu 6 Sn 5 . The presence of Cu 6 Sn 5 leads to a preferred formation of Cu 2 SnS 3 via the reaction educts Cu 2-x S and SnS 2 in the presence of a SnS 2 (Cu 4 SnS 6 ) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase

  4. Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

    Energy Technology Data Exchange (ETDEWEB)

    Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

    2015-05-01

    Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

  5. Thermoset precursor

    International Nuclear Information System (INIS)

    Yamamoto, Y.

    1983-04-01

    This invention pertains to a distinctive thermoset precursor which is prepared by mixing a resin composition (A) which can be hardened by ionizing radiation, and a resin composition (B) which can be hardened by heat but cannot be hardened by, or is resistant to, ionizing radiation, and by coating or impregnating a molding or other substrate with a sheet or film of this mixture and irradiating this with an ionizing radiation. The principal components of composition (A) and (B) can be the following: (1) an acrylate or methacrylate and an epoxy resin and an epoxy resin hardener; (2) an unsaturated polyester resin and epoxy resin and an epoxy resin hardener; (3) a diacrylate or dimethacrylate or polyethylene glycol and an epoxy resin; (4) an epoxy acrylates or epoxy methacrylate obtained by the addition reaction of epoxy resin and acrylic or methacrylic acid

  6. Colloidal Precursors from 'Ball-Milling in Liquid Medium' Process for CuInSe2 Thin Film

    International Nuclear Information System (INIS)

    Chung, Jae Hoon; Kim, Seung Joo

    2010-01-01

    CIS thin film can be fabricated by using the precursor obtained through ball-milling the elemental reagents in liquid media. The amorphous colloidal precursor with good dispersity was prepared in the medium that contains strong base and polar solvent (2 M ethylenediamine in DMF solution as used in this study). The 'ball-milling in liquid medium' method requires only elemental sources as starting materials and a proper solution so that it can be employed without additional processes for separation and purification. As a simple and less-toxic preparative route, this method would be practically available to prepare CIS-related solar cells. CuInSe 2 (CIS) and related chalcopyrite compounds are very promising materials for thin film solar cells due to their favorable band gap, high optical absorption coefficient and long-term stability. CIS-based solar cells have shown the highest conversion efficiency reaching a value of 20%. However, the vacuum-based processes that are used to fabricate CIS thin-films have some drawbacks such as the complexity in process, high production cost and difficulty in scaling up. Recently, several research groups have proposed different non-vacuum deposition processes for CIS solar cell. For example, H. W. Hillhouse et al. prepared the CIS absorber layer by using 'nanocrystal ink method' in which a colloidal nanocrystal ink was obtained from reaction of CuCl, InCl 3 and Se in oleylamine. D. B. Mitzi et al. used a solution-based precursor that was prepared by dissolution of Cu 2 Se, In 2 Se 3 , Ga 2 Se 3 and Se in hydrazine to fabricate the Ga-containing absorber layer, Cu(In,Ga)Se 2

  7. Preparation of high quality spray-deposited fluorine-doped tin oxide thin films using dilute di(n-butyl)tin(iv) diacetate precursor solutions

    Energy Technology Data Exchange (ETDEWEB)

    Premalal, E.V.A., E-mail: vikum777@gmail.com [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu (Japan); Dematage, N. [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu (Japan); Kaneko, S. [SPD Laboratory Inc, Hi-Cube 3-1-7, Wajiyama, Naka-ku, Hamamatsu (Japan); Konno, A. [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu (Japan)

    2012-09-01

    Fluorine-doped tin oxide (FTO) thin films were prepared, at different substrate temperatures, using dilute precursor solutions of di(n-butyl)tin(iv) diacetate (0.1 M DBTDA) by varying the F{sup -} concentration in the solution. It is noticed that conductivity of FTO film is increasing by increasing the fluorine amount in the solution. Morphology of SEM image reveals that grain size and its distribution are totally affected by the substrate temperature in which conductivity is altered. Among these FTO films, the best film obtained gives an electronic conductivity of 31.85 Multiplication-Sign 10{sup 2} {Omega}{sup -1} cm{sup -1}, sheet resistance of 4.4 {Omega}/{open_square} ({rho} = 3.14 Multiplication-Sign 10{sup -4} {Omega} cm) with over 80% average normal transmittance between the 400 and 800 nm wavelength range. The best FTO film consists of a large distribution of grain sizes from 50 nm to 400 nm range and the optimum conditions used are 0.1 M DBTDA, 0.3 M ammonium fluoride, in a mixture of propan-2-ol and water, at 470 Degree-Sign C substrate temperature. The large distribution of grain sizes can be easily obtained using low DBTDA concentration ({approx} 0.1 M or less) and moderate substrate temperature (470 Degree-Sign C). - Highlights: Black-Right-Pointing-Pointer F-doped SnO{sub 2} (FTO) thin films prepared using di(n-butyl)tin(iv) diacetate (DBTDA). Black-Right-Pointing-Pointer Substrate temperature and DBTDA concentration affect grain size and distribution. Black-Right-Pointing-Pointer Large distribution of grain sizes can optimize the conductivity of FTO film. Black-Right-Pointing-Pointer 0.1 M DBTDA, substrate temperature of 470 Degree-Sign C allows a large grain size distribution.

  8. Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

    International Nuclear Information System (INIS)

    Lin, Xianzhong; Kavalakkatt, Jaison; Kornhuber, Kai; Levcenko, Sergiu; Lux-Steiner, Martha Ch.; Ennaoui, Ahmed

    2013-01-01

    Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se 2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu 3 SnS 4 and ZnS NPs and annealing in Ar/H 2 S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy

  9. Preparation of CuGaSe2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquids

    International Nuclear Information System (INIS)

    Steichen, M.; Larsen, J.; Guetay, L.; Siebentritt, S.; Dale, P.J.

    2011-01-01

    CuGaSe 2 absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa 2 alloying during the electrodeposition and CuGaSe 2 formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe 2 absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.

  10. Numerical Investigation on the Effects of a Precursor Wetting Film on the Displacement of Two Immiscible Phases Along a Channel

    KAUST Repository

    Bao, Kai; Salama, Amgad; Sun, Shuyu

    2015-01-01

    A set of numerical experiments has been conducted to study the effect of a precursor fluid layer on the motion of two phase system in a channel. This system is characterized by coupled Cahn-Hillard and Navier-Stokes system together with slip boundary conditions. The solution of the governing equation involves first the solution of Cahn-Hillard equation with semi-implicit and Mixed finite element discritization with a convex splitting scheme. The Navier-Stokes equations are then solved with a P2-P0 mixed finite element method. Three cases have been investigated; in the first the effect of different wettability scenarios with no precursor layer has been investigated. In the second scenario, the effect of the precursor layer for different wettability conditions is investigated. In the third case, the effect of the thickness of the precursor layer is investigated. It is found that, wettability conditions have considerable effect on the flow of the considered two-phase system. Furthermore the existence of the precursor layer has additional influence on the breakthrough of the phases.

  11. Numerical Investigation on the Effects of a Precursor Wetting Film on the Displacement of Two Immiscible Phases Along a Channel

    KAUST Repository

    Bao, Kai

    2015-10-08

    A set of numerical experiments has been conducted to study the effect of a precursor fluid layer on the motion of two phase system in a channel. This system is characterized by coupled Cahn-Hillard and Navier-Stokes system together with slip boundary conditions. The solution of the governing equation involves first the solution of Cahn-Hillard equation with semi-implicit and Mixed finite element discritization with a convex splitting scheme. The Navier-Stokes equations are then solved with a P2-P0 mixed finite element method. Three cases have been investigated; in the first the effect of different wettability scenarios with no precursor layer has been investigated. In the second scenario, the effect of the precursor layer for different wettability conditions is investigated. In the third case, the effect of the thickness of the precursor layer is investigated. It is found that, wettability conditions have considerable effect on the flow of the considered two-phase system. Furthermore the existence of the precursor layer has additional influence on the breakthrough of the phases.

  12. Intermediate Phase Study on YBCO Films Coated by Precursor Solutions With F/Ba Atomic Ratio of 2

    DEFF Research Database (Denmark)

    Wu, W.; Feng, F.; Zhao, Y.

    2016-01-01

    In the chemical solution deposition process of YBCO superconducting films, fluorine is widely regarded to be of significant importance in avoiding the formation of BaCO3, which hinders the growth of high-quality YBCO films. On the other hand, great efforts have been made to decrease the fluorine......) could be routinely obtained on lanthanum aluminate single-crystal substrates....

  13. How the Starting Precursor Influences the Properties of Polycrystalline CuInGaSe2 Thin Films Prepared by Sputtering and Selenization

    Directory of Open Access Journals (Sweden)

    Greta Rosa

    2016-05-01

    Full Text Available Cu(In,GaSe2 (CIGS/CdS thin-film solar cells have reached, at laboratory scale, an efficiency higher than 22.3%, which is one of the highest efficiencies ever obtained for thin-film solar cells. The research focus has now shifted onto fabrication processes, which have to be easily scalable at an industrial level. For this reason, a process is highlighted here which uses only the sputtering technique for both the absorber preparation and the deposition of all the other materials that make up the cell. Particular emphasis is placed on the comparison between different precursors obtained with either In2Se3 and Ga2Se3 or InSe and GaSe as starting materials. In both cases, the precursor does not require any heat treatment, and it is immediately ready to be selenized. The selenization is performed in a pure-selenium atmosphere and only lasts a few minutes at a temperature of about 803 K. Energy conversion efficiencies in the range of 15%–16% are reproducibly obtained on soda-lime glass (SLG substrates. Similar results are achieved if commercial ceramic tiles are used as a substrate instead of glass. This result is especially useful for the so-called building integrated photovoltaic. Cu(In,GaSe2-based solar cells grown directly on ceramic tiles are ideal for the fabrication of ventilated façades in low impact buildings.

  14. Preparation of Anatase TiO2 Thin Films with (OiPr)2Ti(CH3COCHCONEt2)2 Precursor by MOCVD

    International Nuclear Information System (INIS)

    Bae, Byoung Jae; Seo, Won Seok; Miah, Arzu; Park, Joon T.; Lee, Kwang Yeol; Kim, Keun Chong

    2004-01-01

    The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti(O i Pr) 2 (CH 3 COCHCONEt 2 ) 2 (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and 1 H/ 13 C NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis(CONEt 2 ), trans(COCH 3 ) configuration (1a) in a distorted octahedral environment. Variable-temperature 1 H NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20 .deg. C in toluene-d 8 solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500 .deg. C under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500 .deg. C using a bubbler-based MOCVD method

  15. The crystallisation of Cu{sub 2}ZnSnS{sub 4} thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors

    Energy Technology Data Exchange (ETDEWEB)

    Schurr, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany)], E-mail: schurr@krist.uni-erlangen.de; Hoelzing, A.; Jost, S.; Hock, R. [Chair for Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstrasse 20, D-10553 Berlin (Germany); Ennaoui, A.; Lux-Steiner, M. [Heterogeneous Material Systems SE II, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany); Weber, A.; Koetschau, I.; Schock, H.-W. [Technology SE III, Hahn-Meitner-Institut, Glienickerstr.100, D-14109 Berlin (Germany)

    2009-02-02

    The best CZTS solar cell so far was produced by co-sputtering continued with vapour phase sulfurization method. Efficiencies of up to 5.74% were reached by Katagiri et al. The one step electrochemical deposition of copper, zinc, tin and subsequent sulfurization is an alternative fabrication technique for the production of Cu{sub 2}ZnSnS{sub 4} based thin film solar cells. A kesterite based solar cell (size 0.5 cm{sup 2}) with a conversion efficiency of 3.4% (AM1.5) was produced by vapour phase sulfurization of co-electroplated Cu-Zn-Sn films. We report on results of in-situ X-ray diffraction (XRD) experiments during crystallisation of kesterite thin films from electrochemically co-deposited metal films. The kesterite crystallisation is completed by the solid state reaction of Cu{sub 2}SnS{sub 3} and ZnS. The measurements show two different reaction paths depending on the metal ratios in the as deposited films. In copper-rich metal films Cu{sub 3}Sn and CuZn were found after electrodeposition. In copper-poor or near stoichiometric precursors additional Cu{sub 6}Sn{sub 5} and Sn phases were detected. The formation mechanism of Cu{sub 2}SnS{sub 3} involves the binary sulphides Cu{sub 2-x}S and SnS{sub 2} in the absence of the binary precursor phase Cu{sub 6}Sn{sub 5}. The presence of Cu{sub 6}Sn{sub 5} leads to a preferred formation of Cu{sub 2}SnS{sub 3} via the reaction educts Cu{sub 2-x}S and SnS{sub 2} in the presence of a SnS{sub 2}(Cu{sub 4}SnS{sub 6}) melt. The melt phase may be advantageous in crystallising the kesterite, leading to enhanced grain growth in the presence of a liquid phase.

  16. Formation of CuInSe{sub 2} films from metal sulfide and selenide precursor nanocrystals by gas-phase selenization, an in-situ XRD study

    Energy Technology Data Exchange (ETDEWEB)

    Capon, B., E-mail: boris.capon@ugent.be [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Ghent (Belgium); Dierick, R. [Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium); Hens, Z. [Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, B-9000 Ghent (Belgium); Center for Nano and Biophotonics, Ghent University, Ghent (Belgium); Detavernier, C. [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Ghent (Belgium)

    2016-08-01

    In this work phase pure CuInSe{sub 2} thin flms were obtained by selenization of ternary CuInSe{sub 2} and CuInS{sub 2} nanocrystals and mixtures of binary nanocrystals such as CuS, In{sub 2}S{sub 3}, Cu{sub 2}Se and In{sub 2}Se{sub 3}. The temperature of the selenium source was kept at 400 °C during selenization. Monitoring the process using in-situ x-ray diffraction, the effect of selenization on the phase formation and grain growth in the precursor film was investigated. Whereas CuInSe{sub 2} and CuInS{sub 2} nanocrystals exhibit little grain growth, we found that mixtures of binary nanocrystals can show significant sintering depending on the reaction conditions. For the mixture of CuS and In{sub 2}S{sub 3} nanocrystals, the crystallinity and the morphology of the obtained fims strongly depends on the Cu/In ratio, with a Cu excess strongly promoting grain growth. With mixtures of Cu{sub 2}Se and In{sub 2}Se{sub 3} nanocrystals the selenium partial pressure plays a crucial role. Selenium evaporation from the mixed compounds results in CuInSe{sub 2} films composed of relatively small crystallites. Higher selenium partial pressures however resulted in improved sintering. Incomplete propagation of the selenization reaction through the layer was observed though, only leading to a well sintered CuInSe{sub 2} top layer above a fine grained bottom layer. - Highlights: • Different types of colloidal nanocrystals were used as precursors to obtain CuInSe{sub 2} films by gas-phase selenization. • In-situ XRD was used to study the effect of selenization on the phase formation and grain growth in the precursor films. • For a mixture of binary metal sulfides the crystallinity and the morphology strongly depend on the Cu/In ratio. • Higher selenium partial pressures result in improved sintering for a mixture of binary metal selenides.

  17. The structural studies of aluminosilicate gels and thin films synthesized by the sol-gel method using different Al2O3 and SiO2 precursors

    Directory of Open Access Journals (Sweden)

    Adamczyk Anna

    2015-12-01

    Full Text Available Aluminosilicate materials were obtained by sol-gel method, using different Al2O3 and SiO2 precursors in order to prepare sols based on water and organic solvents. As SiO2 precursors, Aerosil 200TM and tetraethoxysilane TEOS: Si(OC2H54 were applied, while DisperalTM and aluminium secondary butoxide ATSB: Al(OC4H93 were used for Al2O3 ones. Bulk samples were obtained by heating gels at 500 °C, 850 °C and at 1150 °C in air, while thin films were synthesized on carbon, steel and alundum (representing porous ceramics substrates by the dip coating method. Thin films were annealed in air (steel and alundum and in argon (carbon at different temperatures, depending on the substrate type. The samples were synthesized as gels and coatings of the composition corresponding the that of 3Al2O3·2SiO2 mullite because of the specific valuable properties of this material. The structure of the annealed bulk samples and coatings was studied by FT-IR spectroscopy and XRD method (in standard and GID configurations. Additionally, the electron microscopy (SEM together with EDS microanalysis were applied to describe the morphology and the chemical composition of thin films. The analysis of FT-IR spectra and X-ray diffraction patterns of bulk samples revealed the presence of γ-Al2O3 and δ-Al2O3 phases, together with the small amount of SiO2 in the particulate samples. This observation was confirmed by the bands due to vibrations of Al–O bonds occurring in γ-Al2O3 and δ-Al2O3 structures, in the range of 400 to 900 cm−1. The same phases (γ-Al2O3 and δ-Al2O were observed in the deposited coatings, but the presence of particulate ones strongly depended on the type of Al2O3 and SiO2 precursor and on the heat treatment temperature. All thin films contained considerable amounts of amorphous phase.

  18. Preparation of Li4Ti5O12 electrode thin films by a mist CVD process with aqueous precursor solution

    Directory of Open Access Journals (Sweden)

    Kiyoharu Tadanaga

    2015-03-01

    Full Text Available Spinel Li4Ti5O12 thin films were prepared by a mist CVD process, using an aqueous solution of lithium nitrate and a water-soluble titanium lactate complex as the source of Li and Ti, respectively. In this process, mist particles ultrasonically atomized from a source aqueous solution were transferred by nitrogen gas to a heating substrate to prepare thin films. Scanning electron microscopy observation showed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 500 nm were obtained. In the X-ray diffraction analysis, formation of Li4Ti5O12 spinel phase was confirmed in the obtained thin film sintered at 700 °C for 4 h. The cell with the thin films as an electrode exhibited a capacity of about 110 mAh g−1, and the cell showed good cycling performance during 10 cycles.

  19. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  20. The influence of different locations of sputter guns on the morphological and structural properties of Cu–In–Ga precursors and Cu(In,Ga)Se{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, J.; Zhu, J., E-mail: jiezhu@ustb.edu.cn; He, Y.X.

    2014-01-01

    The influence of two different locations of sputter guns on the morphological and structural properties of Cu–In–Ga precursors and Cu(In,Ga)Se{sub 2} (CIGS) thin films was investigated. All the precursors contained cauliflower-like nodules, whereas smaller subnodules were observed on the background. All the precursors revealed apparent three-layered structures, and voids were observed at the CIGS/SLG interface of Sets 1 and 2 films rather than Set 3 film. EDS results indicated that all CIGS thin films were Cu-deficient. Based on the grazing incidence X-ray diffraction (GIXRD) patterns, as-selenized films showed peaks corresponding to the chalcopyrite-type CIGS structure. Depth-resolved Raman spectra showed the formation of a dominant CIGS phase inside the films for all the as-selenized samples investigated, and of an ordered vacancy compound (OVC) phase like Cu(In,Ga){sub 3}Se{sub 5} or Cu(In,Ga){sub 2}Se{sub 3.5} at the surface and/or CIGS/SLG interface region of Sets 2 and 3 films. No evidence was obtained on the presence of an OVC phase in Set 1 CIGS film, which may be speculated that long-time annealing is contributed to suppress the growth of OVC phases. The results of the present work suggest that the metallic precursors deposited with the upright-location sputter gun might be more appropriate to prepare CIGS thin films than those sputtered with the titled-location gun.

  1. Electroluminescence of zinc oxide thin-films prepared via polymeric precursor and via sol-gel methods

    International Nuclear Information System (INIS)

    Lima, S.A.M.; Cremona, M.; Davolos, M.R.; Legnani, C.; Quirino, W.G.

    2007-01-01

    Zinc oxide (ZnO) is an electroluminescent (EL) material that can emit light in different regions of electromagnetic spectrum when electrically excited. Since ZnO is chemically stable, inexpensive and environmentally friendly material, its EL property can be useful to construct solid-state lamps for illumination or as UV emitter. We present here two wet chemical methods to prepare ZnO thin-films: the Pechini method and the sol-gel method, with both methods resulting in crystalline and transparent films with transmittance >85% at 550 nm. These films were used to make thin-film electroluminescent devices (TFELD) using two different insulator layers: lithium fluoride (LiF) or silica (SiO 2 ). All the devices exhibit at least two wide emission bands in the visible range centered at 420 nm and at 380 nm attributed to the electronic defects in the ZnO optical band gap. Besides these two bands, the device using SiO 2 and ZnO film obtained via sol-gel exhibits an additional band in the UV range centered at 350 nm which can be attributed to excitonic emission. These emission bands of ZnO can transfer their energy when a proper dopant is present. For the devices produced the voltage-current characteristics were measured in a specific range of applied voltage

  2. Synthesis, characterization, and thermal properties of homoleptic rare-earth guanidinates: promising precursors for MOCVD and ALD of rare-earth oxide thin films.

    Science.gov (United States)

    Milanov, Andrian P; Fischer, Roland A; Devi, Anjana

    2008-12-01

    Eight novel homoleptic tris-guanidinato complexes M[(N(i)Pr)(2)CNR(2)](3) [M = Y (a), Gd (b), Dy (c) and R = Me (1), Et (2), (i)Pr (3)] have been synthesized and characterized by NMR, CHN-analysis, mass spectrometry and infrared spectroscopy. Single crystal structure analysis revealed that all the compounds are monomers with the rare-earth metal center coordinated to six nitrogen atoms of the three chelating guanidinato ligands in a distorted trigonal prism geometry. With the use of TGA/DTA and isothermal TGA analysis, the thermal characteristics of all the complexes were studied in detail to evaluate their suitability as precursors for thin film deposition by MOCVD and ALD. The (i)Pr-Me(2)N-guanidinates of Y, Gd and Dy (1a-c) showed excellent thermal characteristics in terms of thermal stability and volatility. Additionally, the thermal stability of the (i)Pr-Me(2)N-guanidinates of Y and Dy (1a, c) in solution was investigated by carrying out NMR decomposition experiments and both the compounds were found to be remarkably stable. All these studies indicate that (i)Pr-Me(2)N-guanidinates of Y, Gd and Dy (1a-c) have the prerequisites for MOCVD and ALD applications which were confirmed by the successful deposition of Gd(2)O(3) and Dy(2)O(3) thin films on Si(100) substrates. The MOCVD grown films of Gd(2)O(3) and Dy(2)O(3) were highly oriented in the cubic phase, while the ALD grown films were amorphous.

  3. The preparation and corrosion behaviors of MAO coating on AZ91D with rare earth conversion precursor film

    International Nuclear Information System (INIS)

    Cai Jingshun; Cao Fahe; Chang Linrong; Zheng Junjun; Zhang Jianqing; Cao Chunan

    2011-01-01

    A novel kind of micro-arc oxidation (MAO) coating was prepared on magnesium alloy surface coated with rare earth conversion film (RE-film) in an alkaline aluminum oxidation electrolyte by AC power source. Inspection of scanning electron microscopy (SEM), X-ray diffraction (XRD) and Fourier transform infrared (FTIR) microspectroscopy, the structure and composition of MAO coating formed on AZ91D with RE-film under different applied voltages were investigated and the performance of the optimized MAO coating compared with the MAO coating directly formed on magnesium alloy. As the pretreatment of magnesium alloy with RE-film, the cerium oxides can be incorporated into the MAO coatings, reduce porosity of the MAO coating surface and enhance the thickness of MAO coating. These structure features and the cerium oxides incorporated into the MAO coating result in greatly improved corrosion resistance. Base on electrochemistry impedance spectroscopy (EIS) measurement, the electronic structure and composition analysis of the MAO coating, a double-layer structure, with a compact inner layer and a porous outer layer, of the coating was proposed for understanding its corrosion process.

  4. The preparation and corrosion behaviors of MAO coating on AZ91D with rare earth conversion precursor film

    Energy Technology Data Exchange (ETDEWEB)

    Cai Jingshun [Department of Chemistry, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027 (China); Cao Fahe, E-mail: nelson_cao@zju.edu.cn [Department of Chemistry, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027 (China); Chang Linrong; Zheng Junjun [Department of Chemistry, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027 (China); Zhang Jianqing; Cao Chunan [Department of Chemistry, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027 (China); State Key Laboratory for Corrosion and Protection, Institute of Metal Research, The Chinese Academy of Sciences, Shenyang 110016 (China)

    2011-02-01

    A novel kind of micro-arc oxidation (MAO) coating was prepared on magnesium alloy surface coated with rare earth conversion film (RE-film) in an alkaline aluminum oxidation electrolyte by AC power source. Inspection of scanning electron microscopy (SEM), X-ray diffraction (XRD) and Fourier transform infrared (FTIR) microspectroscopy, the structure and composition of MAO coating formed on AZ91D with RE-film under different applied voltages were investigated and the performance of the optimized MAO coating compared with the MAO coating directly formed on magnesium alloy. As the pretreatment of magnesium alloy with RE-film, the cerium oxides can be incorporated into the MAO coatings, reduce porosity of the MAO coating surface and enhance the thickness of MAO coating. These structure features and the cerium oxides incorporated into the MAO coating result in greatly improved corrosion resistance. Base on electrochemistry impedance spectroscopy (EIS) measurement, the electronic structure and composition analysis of the MAO coating, a double-layer structure, with a compact inner layer and a porous outer layer, of the coating was proposed for understanding its corrosion process.

  5. Obtainment of Hg-free Mn/Zn solutions from spent alkaline batteries; Obtencion de soluciones de Mn/Zn libres de Hg provenientes de pilas alcalinas gastadas

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Nicolas, L.; Espinosa-Ramirez, I. [Instituto Politecnico Nacional, UPALM, Mexico, D.F. (Mexico)]. E-mail: lepeni@hotmail.com; Aguilar, M. [Instituto de Fisica, UNAM, Mexico, D.F. (Mexico); Palacios-Beas, E. [Instituto Politecnico Nacional, UPALM, Mexico, D.F. (Mexico)

    2009-09-15

    As in many other countries, the excessive consumption of alkaline batteries in Mexico has generated highly contaminating wastes, with heavy metal contents such as Mn, Zn, Fe, Hg, Cu and Ni, among others. This has caused a large degree of environmental degradation with repercussions for the health of living beings. Because there are no regulations regarding the disposal of spent batteries, they are thrown out with the rest of the domestic wastes or directly into nature, ending up in open-air landfills or containers where they are incinerated, thereby contaminating the planet's environment, soil and springs. The present work studies the obtainment of solutions of Hg-free Mn and Zn (Mn/Zn {>=} 1) from spent alkaline batteries for use in synthesis of (Mn,Zn)Fe{sub 2}O{sub 4} ferrite by a wet method. The effect is analyzed of the dissolution medium (H{sub 2}SO{sub 4}/H{sub 2}O{sub 2}, HCl and HCl/NO{sub 3}) temperature and time on the percentage of dissolution of the metals present in the electrode material, characterized by atomic absorption (AA) spectroscopy and x-ray diffraction (XRD). The results of the investigation indicate that the best dissolution conditions are MD=H{sub 2}SO{sub 4}/H{sub 2}O{sub 2}, T=50 degrees Celsius and t =30 min, where 94.1 and 90.7 % (w/w) of Mn and Zn are obtained, respectively, with Mn/Zn = 1.51. The mercury content was determined to be 3.91%, higher than that stated by the battery specifications, which is recovered by dissolving with HCl/HNO{sub 3} in the residual solid. [Spanish] En Mexico como en muchos otros paises, el consumo excesivo de pilas alcalinas ha generado desechos altamente contaminantes, con contenidos de metales pesados como Mn, Zn, Fe, Hg, Cu y Ni entre otros, que han provocado un gran deterioro en el medio ambiente repercutiendo en la salud de los seres vivos. Dado que no se tiene una regulacion en cuanto a la disposicion de pilas gastadas, estas se desechan con el resto de las residuos domesticos o directamente

  6. Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhiwei; Walker, Amy V., E-mail: amy.walker@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, RL10, 800 W. Campbell Rd., Richardson, Texas 75080 (United States)

    2015-09-15

    The room temperature atomic layerlike deposition (ALLD) of ZnS on functionalized self-assembled monolayers (SAMs) was investigated, using diethyl zinc (DEZ) and in situ generated H{sub 2}S as reactants. Depositions on SAMs with three different terminal groups, –CH{sub 3,} –OH, and –COOH, were studied. It was found that the reaction of DEZ with the SAM terminal group is critical in determining the film growth rate. Little or no deposition is observed on –CH{sub 3} terminated SAMs because DEZ does not react with the methyl terminal group. ZnS does deposit on both –OH and –COOH terminated SAMs, but the grow rate on –COOH terminated SAMs is ∼10% lower per cycle than on –OH terminated SAMs. DEZ reacts with the hydroxyl group on –OH terminated SAMs, while on –COOH terminated SAMs it reacts with both the hydroxyl and carbonyl bonds of the terminal groups. The carbonyl reaction is found to lead to the formation of ketones rather than deposition of ZnS, lowering the growth rate on –COOH terminated SAMs. SIMS spectra show that both –OH and –COOH terminated SAMs are covered by the deposited ZnS layer after five ALLD cycles. In contrast to ZnO ALLD where the composition of the film differs for the first few layers on –COOH and –OH terminated SAMs, the deposited film composition is the same for both –COOH and –OH terminated SAMs. The deposited film is found to be Zn-rich, suggesting that the reaction of H{sub 2}S with the Zn-surface adduct may be incomplete.

  7. Self-assembled SnO2 micro- and nanosphere-based gas sensor thick films from an alkoxide-derived high purity aqueous colloid precursor

    Science.gov (United States)

    Kelp, G.; Tätte, T.; Pikker, S.; Mändar, H.; Rozhin, A. G.; Rauwel, P.; Vanetsev, A. S.; Gerst, A.; Merisalu, M.; Mäeorg, U.; Natali, M.; Persson, I.; Kessler, V. G.

    2016-03-01

    Tin oxide is considered to be one of the most promising semiconductor oxide materials for use as a gas sensor. However, a simple route for the controllable build-up of nanostructured, sufficiently pure and hierarchical SnO2 structures for gas sensor applications is still a challenge. In the current work, an aqueous SnO2 nanoparticulate precursor sol, which is free of organic contaminants and sorbed ions and is fully stable over time, was prepared in a highly reproducible manner from an alkoxide Sn(OR)4 just by mixing it with a large excess of pure neutral water. The precursor is formed as a separate liquid phase. The structure and purity of the precursor is revealed using XRD, SAXS, EXAFS, HRTEM imaging, FTIR, and XRF analysis. An unconventional approach for the estimation of the particle size based on the quantification of the Sn-Sn contacts in the structure was developed using EXAFS spectroscopy and verified using HRTEM. To construct sensors with a hierarchical 3D structure, we employed an unusual emulsification technique not involving any additives or surfactants, using simply the extraction of the liquid phase, water, with the help of dry butanol under ambient conditions. The originally generated crystalline but yet highly reactive nanoparticles form relatively uniform spheres through self-assembly and solidify instantly. The spheres floating in butanol were left to deposit on the surface of quartz plates bearing sputtered gold electrodes, producing ready-for-use gas sensors in the form of ca. 50 μm thick sphere-based-films. The films were dried for 24 h and calcined at 300 °C in air before use. The gas sensitivity of the structures was tested in the temperature range of 150-400 °C. The materials showed a very quickly emerging and reversible (20-30 times) increase in electrical conductivity as a response to exposure to air containing 100 ppm of H2 or CO and short (10 s) recovery times when the gas flow was stopped.Tin oxide is considered to be one of the

  8. Weakening of thickness dependence of J{sub C} in YBa{sub 2}Cu{sub 3}O{sub 7-δ} films using a titanium-added MOD precursor solution

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.L., E-mail: zhanghuiliang@mail.iee.ac.cn [Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); School of Science, Hebei University of Engineering, Handan 056038 (China); Ding, F.Z., E-mail: dingfazhu@mail.iee.ac.cn [Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Gu, H.W., E-mail: guhw@mail.iee.ac.cn [Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Dong, Z.B. [Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Qu, F.; Zhang, H.; Shang, H.J. [Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)

    2017-04-15

    Highlights: • The thickness dependence of J{sub C} in YBCO film was weakened by introducing BaTiO{sub 3} nanoparticles into YBCO matrix. • The high I{sub C} value of 430 MA/cm-width was obtained in the BaTiO{sub 3}-doped YBCO film prepared by the MOD method. • The YBCO composite thick film prepared by using the precursor solution with polyethyleneglycol shows a compact and smooth surface. - Abstract: BaTiO{sub 3} (BTO)-doped YBa{sub 2}Cu{sub 3}O{sub 7-δ} (YBCO) films were prepared by the metal-organic deposition method using a precursor solution with titanium ion. These YBCO films were deposited on (00l)-oriented LaAlO{sub 3} single-crystal substrates using an automated dip coater. The thickness dependence of critical current density (J{sub C}) in the BTO-doped YBCO films was investigated. The J{sub C} value of the YBCO composite film was reduced from 6.3 to 4.6 MA/cm{sup 2} with increasing film thickness from 450 to 930 nm in self-filed at 77 K, which arose mainly from degradation of texture and roughening of the film. However, relative to undoped YBCO thick films, J{sub C} values of the YBCO composite thick films were greatly improved, and more importantly, the reduction in J{sub C} with increasing film thickness was hindered, especially in a high magnetic field. This result indicated that the introduction of BTO nanoparticles as pinning centers into YBCO matrix weakened the thickness dependence of J{sub C}.

  9. Direct imprinting of indium-tin-oxide precursor gel and simultaneous formation of channel and source/drain in thin-film transistor

    Science.gov (United States)

    Haga, Ken-ichi; Kamiya, Yuusuke; Tokumitsu, Eisuke

    2018-02-01

    We report on a new fabrication process for thin-film transistors (TFTs) with a new structure and a new operation principle. In this process, both the channel and electrode (source/drain) are formed simultaneously, using the same oxide material, using a single nano-rheology printing (n-RP) process, without any conventional lithography process. N-RP is a direct thermal imprint technique and deforms oxide precursor gel. To reduce the source/drain resistance, the material common to the channel and electrode is conductive indium-tin-oxide (ITO). The gate insulator is made of a ferroelectric material, whose high charge density can deplete the channel of the thin ITO film, which realizes the proposed operation principle. First, we have examined the n-RP conditions required for the channel and source/drain patterning, and found that the patterning properties are strongly affected by the cooling rate before separating the mold. Second, we have fabricated the TFTs as proposed and confirmed their TFT operation.

  10. Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

    International Nuclear Information System (INIS)

    Kim, Hyung Keun; Jung, Jin Hwan; Choi, Doo Jin

    2012-01-01

    To meet increasing demands for chemical vapor deposition methods for high performance phase-change memory, cyclic plasma enhanced chemical vapor deposition of Sb and Ge x Sb y phase-change films and characterization of their properties were performed. Two cycle sequences were designed to investigate the role of hydrogen gas as a reduction gas during Sb film deposition. Hydrogen gas was not introduced into the reaction chamber during the purge step in cycle sequence A and was introduced during the purge step for cycle sequence B. The role of hydrogen gas was investigated by comparing the results obtained from these two cycle sequences and was concluded to exert an effect by a combination of precursor decomposition, surface maintenance as a hydrogen termination agent, and surface etching. These roles of hydrogen gas are discussed through consideration of changes in deposition rates, the oxygen concentration on the surface of the Sb film, and observations of film surface morphology. Based on these results, Ge x Sb y phase-change films were deposited with an adequate flow rate of hydrogen gas. The Ge and Sb composition of the film was controlled with the designed cycle sequences. A strong oxygen affinity for Ge was observed during the X-ray photoelectron spectroscopy analysis of Sb 3d, Sb 4d, and Ge 3d orbitals. Based on the XPS results, the ratios of Ge to Sb were calculated to be Ge 0.32 Sb 0.68 , Ge 0.38 Sb 0.62 , Ge 0.44 Sb 0.56 , Ge 0.51 Sb 0.49 and Ge 0.67 Sb 0.33 for the G1S7, G1S3, G1S2, G1S1, and G2S1 cycles, respectively. Crystal structures of Sb, Ge, and the GeSb metastable phase were observed with various Ge x Sb y film compositions. Sb crystallinity decreased with respect to Ge crystallinity by increasing the Ge fraction. A current–voltage curve was introduced, and an electro-switching phenomenon was clearly generated at a typical voltage, V th . V th values increased in conjunction with an increased proportion of Ge. The Sb crystallinity decrease and V

  11. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    Science.gov (United States)

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  12. A photochemical proposal for the preparation of ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films from β-diketonate complex precursors

    Energy Technology Data Exchange (ETDEWEB)

    Cabello, G., E-mail: gerardocabelloguzman@hotmail.com [Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán (Chile); Lillo, L.; Caro, C.; Seguel, M.; Sandoval, C. [Departamento de Ciencias Básicas, Facultad de Ciencias, Universidad del Bío-Bío, Chillán (Chile); Buono-Core, G.E. [Instituto de Química, Pontificia Universidad Católica de Valparaíso, Valparaíso (Chile); Chornik, B.; Flores, M. [Deparamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Santiago 8370415 (Chile)

    2016-05-15

    Highlights: • ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were prepared by photo-chemical method. • The Zn(II), Mg(II) and Al(III) β-diketonate complexes were used as precursors. • The photochemical reaction was monitored by UV–vis and FT-IR spectroscopy. • The results reveal spinel oxide formation and the generation of intermediate products. - Abstract: ZnAl{sub 2}O{sub 4} and MgAl{sub 2}O{sub 4} thin films were grown on Si(100) and quartz plate substrates using a photochemical method in the solid phase with thin films of β-diketonate complexes as the precursors. The films were deposited by spin-coating and subsequently photolyzed at room temperature using 254 nm UV light. The photolysis of these films results in the deposition of metal oxide thin films and fragmentation of the ligands from the coordination sphere of the complexes. The obtained samples were post-annealed at different temperatures (350–1100 °C) for 2 h and characterized by FT-Infrared spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force miscroscopy (AFM), and UV–vis spectroscopy. The results indicate the formation of spinel-type structures and other phases. These characteristics determined the quality of the films, which were obtained from the photodeposition of ternary metal oxides.

  13. Versatile High-Performance Regenerated Cellulose Membranes Prepared using Trimethylsilyl Cellulose as a Precursor

    KAUST Repository

    Puspasari, Tiara

    2018-01-01

    (TMSC), a highly soluble cellulose derivative, as a precursor for the fabrication of cellulose thin film composite membranes. TMSC is an attractive precursor to assemble thin cellulose films with good deposition behavior and film morphology; cumbersome

  14. Effects of the precursor concentration and different annealing ambients on the structural, optical, and electrical properties of nanostructured V2O5 thin films deposited by spray pyrolysis technique

    Science.gov (United States)

    Irani, Rowshanak; Rozati, Seyed Mohammad; Beke, Szabolcs

    2018-04-01

    V2O5 thin films were deposited with different precursor concentrations of 0.01, 0.05, and 0.1 M on glass substrates by spray pyrolysis technique, then the optimized films were annealed in different ambients (air, oxygen, and vacuum). The results showed that by increasing the concentration, the films grew along the (001) direction with an orthorhombic structure. Field emission scanning electron microscopy showed that nanorods were formed when depositing 0.05 molar of VCl3. We conclude that with the precursor concentration, the surface nanostructure can be well-controlled. Annealing improved the crystallinity under all ambients, but the best crystallinity was achieved in vacuum. It was revealed that the as-deposited films had the highest transmission, whereas the films annealed in air had the lowest. When annealed in air, the optical band gap decreased from 2.45 to 2.32 eV. The sheet resistance, resistivity, mobility, conductivity, and carrier concentration were measured for all the prepared V2O5 films.

  15. Oil/water displacement in microfluidic packed beds under weakly water-wetting conditions: competition between precursor film flow and piston-like displacement

    Science.gov (United States)

    Tanino, Yukie; Zacarias-Hernandez, Xanat; Christensen, Magali

    2018-02-01

    Optical microscopy was used to measure depth-averaged oil distribution in a quasi-monolayer of crushed marble packed in a microfluidic channel as it was displaced by water. By calibrating the transmitted light intensity to oil thickness, we account for depth variation in the fluid distribution. Experiments reveal that oil saturation at water breakthrough decreases with increasing Darcy velocity, U_{ {w}}, between capillary numbers {Ca} = μ _{ {w}} U_{ {w}}/σ = 9× 10^{-7} and 9× 10^{-6}, where μ _{ {w}} is the dynamic viscosity of water and σ is the oil/water interfacial tension, under the conditions considered presently. In contrast, end-point (long-time) remaining oil saturation depends only weakly on U_{ {w}}. This transient dependence on velocity is attributed to the competition between precursor film flow, which controls early time invasion dynamics but is inefficient at displacing oil, and piston-like displacement, which controls ultimate oil recovery. These results demonstrate that microfluidic experiments using translucent grains and fluids are a convenient tool for quantitative investigation of sub-resolution liquid/liquid displacement in porous media.

  16. Cu{sub 2}ZnSnS{sub 4} thin film solar cells from electroplated precursors: Novel low-cost perspective

    Energy Technology Data Exchange (ETDEWEB)

    Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de; Lux-Steiner, M.; Weber, A.; Abou-Ras, D.; Koetschau, I.; Schock, H.-W. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienickerstrasse 100, D-14109 Berlin (Germany); Schurr, R.; Hoelzing, A.; Jost, S.; Hock, R. [Crystallography and Structural Physics, University of Erlangen-Nuernberg, Staudtstrasse 3, D-91058 Erlangen (Germany); Voss, T.; Schulze, J.; Kirbs, A. [Atotech Deutschland GmbH, Erasmusstr. 20, D-10553 Berlin (Germany)

    2009-02-02

    Thin-film solar cells based on Cu{sub 2}ZnSnS{sub 4} (CZTS) absorbers were fabricated successfully by solid-state reaction in H{sub 2}S atmosphere of electrodeposited Cu-Zn-Sn precursors. These ternary alloys were deposited in one step from a cyanide-free alkaline electrolyte containing Cu(II), Zn (II) and Sn (IV) metal salts on Mo-coated glass substrates. The solar cell was completed by a chemical bath-deposited CdS buffer layer and a sputtered i-ZnO/ZnO:Al bilayer. The best solar cell performance was obtained with Cu-poor samples. A total area (0.5 cm{sup 2}) efficiency of 3.4% is achieved (V{sub oc} = 563 mV, j{sub sc} = 14.8 mA/cm{sup 2}, FF = 41%) with a maximum external quantum efficiency (EQE) of 80%. The estimated band-gap energy from the external quantum efficiency (EQE) measurements is about 1.54 eV. Electron backscatter-diffraction maps of cross-section samples revealed CZTS grain sizes of up to 10 {mu}m. Elemental distribution maps of the CZTS absorber show Zn-rich precipitates, probably ZnS, and a Zn-poor region, presumably Cu{sub 2}SnS{sub 3}, close to the interface Mo/CZTS.

  17. Investigations of vertical chemical gradients in Cu(In,Ga)S{sub 2}-thin films prepared by sulfurization of sputtered precursor layers using highly spatially resolved cathodoluminescence microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ribbe, Stefan; Mueller, Mathias; Bertram, Frank; Hempel, Thomas; Christen, Juergen [Institute for Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Rodriguez-Alvarez, Humberto; Lauche, Jakob; Schock, Hans-Werner [Helmholtz Center Berlin for Materials and Energy (Germany)

    2012-07-01

    The luminescence properties of Cu(In,Ga)S{sub 2}(CIGS)-absorber layers for thin film solar cells have been studied by highly spatially resolved cathodoluminescence (CL) at low temperature (T=5 K). In/Cu-Ga-precursors were annealed with elementary sulfur pellets in a rapid thermal process at different annealing times to represent different growth steps of the CIGS absorber layer. Spatially integral CL spectra show a dominant peak at 825 nm accompanied by a low-energy shoulder at 890 nm. Only a slight blue shift of the main peak is observed by variation of the excitation density. Investigations of cross-sections show for all samples a similar luminescence distribution. Near the molybdenum back contact distinct areas show luminescence emitting at 680-750 nm. In contrast, in upper regions of the layer a homogeneous low-energy luminescence at around 820 nm is observed which exhibits the most intensive spots on the cross-section. In local spectra we observe a change of the dominant recombination channel at the interface of these two regions.

  18. Electron-gun Evaporation of Cu and In thin films as Precursors for CuInSe{sub 2} Formation; Evaporacion mediante Canon de Electrones de Laminas Delgadas de Cu e In como Precursores para la Obtencion de CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R; Guillen, C

    2001-07-01

    In the present investigation CuInSe{sub 2} is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm''2, and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs.

  19. Electron-gun Evaporation of Cu and In thin films as Precursors for CuInSe{sub 2} Formation; Evaporacion mediante Canon de Electrones de Laminas Delgadas de Cu e In como Precursores para la Obtencion de CuInSe{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Caballero, R.; Guillen, C.

    2001-07-01

    In the present investigation CuInSe{sub 2} is obtained in two stages: sequential evaporation of Cu and In using an electron gun evaporator on substrates up to 30 x 30 cm''2, and a posterior selenization of the deposited films. The study is mainly focused on the first stage, in where the control of the different evaporation parameters of the metal precursors is essential. Electrical measurements are carried out, and also the topography and the thickness are determined with the object of studying the properties and homogeneity of the thin films. (Author) 19 refs.

  20. Atomic layer deposition of GeO{sub 2} thin films on Si(100) using Ge(N,N'-R,R-en)(NMe{sub 2}){sub 2} (where R = Isopropyl and t-Butyl) precursors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dae Hyun; Shin, Jin Ho [Soulbrain Sigma-Aldrich Co., Ltd., Gongju (Korea, Republic of); Jung, Jae Sun; Kang, Jun Gill [Chungnam National University, Daejeon (Korea, Republic of)

    2015-08-15

    In this study, we introduced bis(dimethylamino)(N,N'-diisopropyl-ethylenediamine) germanium (1) and bis (dimethyl-amino)(N,N'-di-tert-butyl-ethylenediamine) germanium (2) as novel ALD precursors and analyzed the ALD growth characteristics to obtain the best possible film properties. A 5-L three-neck flask was charged with 2.5 L of toluene, GeCl{sub 4} (60 g, 0.28 mol) was added and then cooled to -15 to -20 .deg. C. the two precursors produced good-quality GeO{sub 2} thin films via the ALD process. The ALD windows of bis(dimethylamino)(N,N'-di-isopropyl-ethylenediamine) germanium and bis(dimethylamino)(N,N'-di-tert -butyl-ethylene-diamine) germanium were established at 200–330 .deg. C with a growth rate of about 0.40 and 0.31 Å/cycle, respectively. ALD-type growth mode was verified by increasing the precursor pulsing time. Growth rate was saturated from 3.0 s. These films have considerable potential for industrial applications.

  1. Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH32]3/C7H8 Cocktail Precursor

    Directory of Open Access Journals (Sweden)

    Jong-Ki An

    2018-03-01

    Full Text Available The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2 dielectric thin films that were fabricated using a CpZr[N(CH32]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.

  2. Cu{sub 2}ZnSnS{sub 4} thin films obtained by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers: Influence of the ternary precursor features

    Energy Technology Data Exchange (ETDEWEB)

    Robles, V.; Guillén, C., E-mail: c.guillen@ciemat.es; Trigo, J.F.; Herrero, J.

    2017-04-01

    Highlights: • Kesterite Cu{sub 2}ZnSnS{sub 4} is got by sulfurization of evaporated Cu{sub 2}SnS{sub 3} and ZnS layers. • Smooth films are obtained by decreasing the growth temperature of Cu{sub 2}SnS{sub 3}. • The lattice strain and the electrical conductivity increase with the Cu-content. • The energy gap diminishes as the Cu-content and/or the surface roughness increase. - Abstract: Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been grown by sulfurization of Cu{sub 2}SnS{sub 3} (CTS) and ZnS layers evaporated on glass substrates. Four CTS precursor films have been tested, with two different atomic compositions (Cu/Sn = 1.7 and Cu/Sn = 2.1) and substrate temperatures (350 and 450 °C), together with analogous ZnS layers deposited by maintaining the substrate at 200 °C. The sulfurization of the CTS and ZnS stacked layers was performed at 500 °C during 1 h. The evolution of the crystalline structure, morphology, optical and electrical properties from each CTS precursor to the CZTS compound has been studied, especially the influence of the ternary precursor features on the quaternary film characteristics. The kesterite structure has been identified after sulfurization of the various samples, with main (112) orientation and mean crystallite sizes S{sub 112} = 40–56 nm, being higher for the Cu-poor compositions. The CZTS average roughness has varied in a wide interval R{sub a} = 8–66 nm, being directly related to the CTS precursor layer, which becomes rougher for a higher deposition temperature or Cu content. Besides, the band gap energy and the electrical resistivity of the CZTS films have changed in the ranges E{sub g} = 1.54–1.64 eV and ρ = 0.2–40 Ωcm, both decreasing when the Cu content and/or the surface roughness increase.

  3. Precursor polymer compositions comprising polybenzimidazole

    Science.gov (United States)

    Klaehn, John R.; Peterson, Eric S.; Orme, Christopher J.

    2015-07-14

    Stable, high performance polymer compositions including polybenzimidazole (PBI) and a melamine-formaldehyde polymer, such as methylated, poly(melamine-co-formaldehyde), for forming structures such as films, fibers and bulky structures. The polymer compositions may be formed by combining polybenzimidazole with the melamine-formaldehyde polymer to form a precursor. The polybenzimidazole may be reacted and/or intertwined with the melamine-formaldehyde polymer to form the polymer composition. For example, a stable, free-standing film having a thickness of, for example, between about 5 .mu.m and about 30 .mu.m may be formed from the polymer composition. Such films may be used as gas separation membranes and may be submerged into water for extended periods without crazing and cracking. The polymer composition may also be used as a coating on substrates, such as metal and ceramics, or may be used for spinning fibers. Precursors for forming such polymer compositions are also disclosed.

  4. Structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin film absorbers from ZnS and Cu{sub 3}SnS{sub 4} nanoparticle precursors

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Xianzhong, E-mail: lin.xianzhong@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Kavalakkatt, Jaison [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Kornhuber, Kai; Levcenko, Sergiu [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany); Freie Universität Berlin, Berlin (Germany); Ennaoui, Ahmed, E-mail: ennaoui@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

    2013-05-01

    Cu{sub 2}ZnSnS{sub 4} (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se{sub 2} due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu{sub 3}SnS{sub 4} and ZnS NPs and annealing in Ar/H{sub 2}S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy.

  5. Preparation of Anatase TiO{sub 2} Thin Films with (O{sup i}Pr){sub 2}Ti(CH{sub 3}COCHCONEt{sub 2}){sub 2} Precursor by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Bae, Byoung Jae; Seo, Won Seok; Miah, Arzu; Park, Joon T. [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of); Lee, Kwang Yeol [Korea University, Seoul (Korea, Republic of); Kim, Keun Chong [Hong-Ik University, Chochiwon (Korea, Republic of)

    2004-11-15

    The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti(O{sup i}Pr){sub 2}(CH{sub 3}COCHCONEt{sub 2}){sub 2} (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and {sup 1}H/{sup 13}C NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis(CONEt{sub 2}), trans(COCH{sub 3}) configuration (1a) in a distorted octahedral environment. Variable-temperature {sup 1}H NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at -20 .deg. C in toluene-d{sub 8} solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500 .deg. C under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500 .deg. C using a bubbler-based MOCVD method.

  6. [Zr(NEtMe)2(guan-NEtMe)2] as a novel ALD precursor: ZrO2 film growth and mechanistic studies

    NARCIS (Netherlands)

    Blanquart, T.; Niinistö, J.; Aslam, N.; Banerjee, M.; Tomczak, Y.; Gavagnin, M.; Longo, V.; Puukilainen, E.; Wanzenboeck, H.D.; Kessels, W.M.M.; Devi, A.; Hoffmann-Eifert, S.; Ritala, M.; Leskelä, M.

    2013-01-01

    [Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas with ozone the growth rate increased steadily with

  7. Chemical vapor deposition of ZrO{sub 2} thin films using Zr(NEt{sub 2}){sub 4} as precursor

    Energy Technology Data Exchange (ETDEWEB)

    Bastianini, A. [CNR, Padova (Italy). Ist. di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati; Battiston, G.A. [CNR, Padova (Italy). Ist. di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati; Gerbasi, R. [CNR, Padova (Italy). Ist. di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati; Porchia, M. [CNR, Padova (Italy). Ist. di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati; Daolio, S. [CNR, Padova (Italy). Ist. di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati]|[CNR, Ist. di Polarografia ed Elettrochimica Preparativa, Padova (Italy)

    1995-06-01

    By using tetrakis(diethylamido) zirconium [Zr(NEt{sub 2}){sub 4}], excellent quality ZrO{sub 2} thin films were deposited with high growth rates on alumina and glass substrates by chemical vapor deposition. The depositions were carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580 C and in the presence of oxygen. The as-grown films are colourless, smooth and well-adherent to the substrates. SIMS analysis evidenced pure ZrO{sub 2} with a slight superficial contamination of hydrocarbons and nitrogen. The films have a tapered polycrystalline columnar structure well visible in SEM micrographs. From X-ray diffraction analysis, the monoclinic phase resulted as the major phase together with a small variable amount of tetragonal zirconia. Under 550 C the as-grown films resulted highly textured and were dominated by the (020) orientation. The films were annealed in the range 600-1000 C and the effect of annealing on the texture and on the phase and dimensions of the crystallites have been studied. (orig.).

  8. Epitaxial growth of YBa2Cu307−δ films on SrTiO3 (100) by direct solution precursor deposition

    International Nuclear Information System (INIS)

    Bustamante, A; Garcia, Jorge; Osorio, Ana M; Valladares, Luis De Los Santos; Barnes, C H W; González, J C; Azuma, Y; Majima, Y; Aguiar, J Albino

    2014-01-01

    We study the optimal temperature to obtain YBa 2 Cu 3 O 7-δ epitaxial films grown onto SrTiO 3 substrates by direct solution deposition. The samples received heat treatment at 820, 840 and 860 °C, then characterized by XRD, observing the (00l) profiles; and magnetic susceptibility measurements. The T C-onset for all the samples was 90 K. In addition, the current – voltage (I-V) measurements shows typical tunneling signals corresponding to normal metal-superconducting junctions indicating the films are promising for potential electrical applications.

  9. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    Science.gov (United States)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  10. Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

    Science.gov (United States)

    Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

    2016-06-01

    The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  11. Characterization of Microstructure and Performance of YBa2Cu3O7−x Films Synthesized Through Sol–Gel Aqueous Precursors with DEA/TEA Addition

    DEFF Research Database (Denmark)

    Tang, Xiao; He, Dong; Zhao, Yichun

    2013-01-01

    YBa2Cu3O7−x (YBCO) superconducting thin films are synthesized through non-fluorine sol–gel aqueous processes. Diethanolamine (DEA) and triethonalamine (TEA), which have similar molecular structures but different complexation abilities and molecular weights, are separately used as chelating agents...

  12. Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

    International Nuclear Information System (INIS)

    Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

    2016-01-01

    Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  13. Comparison of HfCl{sub 4}, HfI{sub 4}, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO{sub 2} films deposited by ALD: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Cortez-Valadez, M. [Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-88, 83190 Hermosillo, Son. (Mexico); Fierro, C.; Farias-Mancilla, J.R. [Instituto de Ingeniería y Tecnología, Departamento de Física y Matemáticas, Universidad Autónoma de Ciudad Juárez, Av. del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); Vargas-Ortiz, A. [Universidad Autónoma de Sinaloa, Facultad de Ingeniería Mochis, Ciudad Universitaria, C.P. 81223 Los Mochis, Sinaloa (Mexico); Flores-Acosta, M. [Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-88, 83190 Hermosillo, Son. (Mexico); Ramírez-Bon, R. [Centro de Investigación y Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, 76001 Querétaro, Qro. (Mexico); Enriquez-Carrejo, J.L. [Instituto de Ingeniería y Tecnología, Departamento de Física y Matemáticas, Universidad Autónoma de Ciudad Juárez, Av. del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); and others

    2016-06-15

    Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO{sub 2} films grown by atomic layer deposition (ALD) after reaction with OH{sup −} ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl{sub 4} (hafnium tetrachloride), HfI{sub 4} (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  14. Hybrid perovskite solar cells: In situ investigation of solution-processed PbI2 reveals metastable precursors and a pathway to producing porous thin films

    KAUST Repository

    Barrit, Dounya

    2017-04-17

    The successful and widely used two-step process of producing the hybrid organic-inorganic perovskite CH3NH3PbI3, consists of converting a solution deposited PbI2 film by reacting it with CH3NH3I. Here, we investigate the solidification of PbI2 films from a DMF solution by performing in situ grazing incidence wide angle X-ray scattering (GIWAXS) measurements. The measurements reveal an elaborate sol–gel process involving three PbI2⋅DMF solvate complexes—including disordered and ordered ones—prior to PbI2 formation. The ordered solvates appear to be metastable as they transform into the PbI2 phase in air within minutes without annealing. Morphological analysis of air-dried and annealed films reveals that the air-dried PbI2 is substantially more porous when the coating process produces one of the intermediate solvates, making this more suitable for subsequent conversion into the perovskite phase. The observation of metastable solvates on the pathway to PbI2 formation open up new opportunities for influencing the two-step conversion of metal halides into efficient light harvesting or emitting perovskite semiconductors.

  15. Chemistry of surface nanostructures in lead precursor-rich PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} sol–gel films

    Energy Technology Data Exchange (ETDEWEB)

    Gueye, I.; Le Rhun, G.; Gergaud, P.; Renault, O. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Defay, E. [Luxembourg Institute of Science and Technology, Materials Research and Technology Department, 41 Rue du Brill, L-4422 Belvaux (Luxembourg); Barrett, N., E-mail: nick.barrett@cea.fr [SPEC, CEA, CNRS, Université Paris Saclay, F-91191 Gif-sur-Yvette (France)

    2016-02-15

    Highlights: • We have studied the effect of lead excess on the surface of PZT sol–gel films. • For low lead excess (10%) nanostructured surface phase is observed. • X-ray photoelectron spectroscopy shows that the surface phase is Zr oxide. - Abstract: We present a study of the chemistry of the nanostructured phase at the surface of lead zirconium titanate PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) films synthesized by sol–gel method. In sol–gel synthesis, excess lead precursor is used to maintain the target stoichiometry. Surface nanostructures appear at 10% excess whereas 30% excess inhibits their formation. Using the surface-sensitive, quantitative X-ray photoelectron spectroscopy and glancing angle X-ray diffraction we have shown that the chemical composition of the nanostructures is ZrO{sub 1.82−1.89} rather than pyrochlore often described in the literature. The presence of a possibly discontinuous layer of wide band gap ZrO{sub 1.82−1.89} could be of importance in determining the electrical properties of PZT-based metal-insulator-metal heterostructures.

  16. Fabrication and sulfurization of Cu{sub 2}SnS{sub 3} thin films with tuning the concentration of Cu-Sn-S precursor ink

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chi-Jie [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China); Shei, Shih-Chang, E-mail: scshei@mail.nutn.edu.tw [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shih-Chang [Department of Electrical Engineering, Nation University of Tainan, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Taiwan (China)

    2016-12-01

    Highlights: • Tuning the relative reaction rate of component phases proved to be beneficial in controlling the reaction process. • Low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology. • Optical band-gap energy measured at 1.346 eV suitable for thin-film solar cell applications. - Abstract: In this study, Cu-Sn-S nanoinks were synthesized by combining chelating polyetheramine to Cu, Sn, S powders of various concentrations. X-ray diffraction patterns indicate that nanoinks synthesized at low concentrations are composed almost entirely of binary phases SnS and Cu{sub 2}S. Synthesizing nanoinks at higher concentrations decreased the quantity of binary phase and led to the appearance of ternary phase Cu{sub 4}SnS{sub 4}. Following sulfurization, single phase Cu{sub 2}SnS{sub 3} (CTS) thin film was obtained from nanoinks of low concentration; however, impurities, such as Cu{sub 2}S were detected in the thin film obtained from nanoinks of high concentration. This can be attributed to the fact that lower concentrations reduce the reactivity of all the elements. As a result, the SnS phase reacted more readily and more rapidly, resulting in the early formation of a stoichiometric CTS thin film during sulfurization. Under these reaction conditions, Cu{sub 2}S and SnS transform into CTS and thereby prevent the formation of unwanted phases of Cu{sub 2}S and Cu{sub 4}SnS{sub 4}. Raman spectra revealed that second phase Cu{sub 2}S phase remained in the high-concentration samples, due to an increase in reactivity due to the participation of a greater proportion of the copper in the reaction. The surface microstructure of low-concentration samples display closely packed Cu{sub 2}SnS{sub 3} grains with a flat morphology and an atomic composition ratio of Cu:Sn:S = 34.69:15.90:49.41, which is close to stoichiometric. Hall measurement revealed that low-concentration sample has superior electrical properties; i.e., a hole

  17. Preparation of YBa2Cu3O7-x superconducting solutions and films from alkoxide-based precursors using sol-gel method and investigation of their chemical reaction mechanisms

    International Nuclear Information System (INIS)

    Mutlu, Ibrahim Halil; Acun, Hediye; Celik, Erdal; Turkmen, Hasan

    2007-01-01

    In the development of coated superconductors sol-gel technique has been widely used as an effective processing method, especially in making long-length wires and tapes. However, one drawback associated with the deposition of YBa 2 Cu 3 O 7-x and Gd 2 O 3 buffer layer on Ni tape is the adhesion characteristic at interfaces YBCO-Gd 2 O 3 and Gd 2 O 3 -NiO and NiO-Ni substrate. In this paper, two strategies for adhesion enhancement of multilayered ceramic oxide coatings on Ni substrate were proposed: (1) formation of chemical bonds through surface condensation reactions, and development of ceramic networks through diffusion of alkoxide precursors. The current research has focused on the fabrication and adhesion of YBCO coatings on buffered Ni substrate using nine solutions prepared from Y, Ba and Cu alkoxides, solvent and chelating agent. Only two of YBCO solutions were successfully obtained while the rest of them were unsuccessful. Among these solutions we scrutinized chemical reaction mechanisms of a successful and an unsuccessful solution for comparison. How the chemical bonds and solubility were affected by the acids, base and solvents used in the solutions was demonstrated. It was shown that pH of the solution, homogeneity of the solution and gelation, steric affect of the chemicals in sol-gel solutions are significant issues to obtain high quality superconducting YBCO thin films. In addition, X-ray diffraction (XRD) was used to analyze phase structure of YBCO and compare results of chemical reactions obtained by a chemdraw programme. Scanning electron microscope (SEM) studies was carried out to examine microstructures of YBCO films produced from alkoxide precursors, solvent, chelating agent and modifying liquid chemical materials such as triethanolamine or ammonium hydroxide. It was found to be YBCO, Gd 2 O 3 , NiO and Ni phases in YBCO/Gd 2 O 3 /Ni sample from XRD analysis. That the solution prepared by using triethanolamine provided the best film quality and

  18. Formation of defect-fluorite structured NdNiOxHy epitaxial thin films via a soft chemical route from NdNiO3 precursors.

    Science.gov (United States)

    Onozuka, T; Chikamatsu, A; Katayama, T; Fukumura, T; Hasegawa, T

    2016-07-26

    A new phase of oxyhydride NdNiOxHy with a defect-fluorite structure was obtained by a soft chemical reaction of NdNiO3 epitaxial thin films on a substrate of SrTiO3 (100) with CaH2. The epitaxial relationship of this phase relative to SrTiO3 could be controlled by changing the reaction temperature. At 240 °C, NdNiOxHy grew with a [001] orientation, forming a thin layer of infinite-layer NdNiO2 at the interface between the NdNiOxHy and the substrate. Meanwhile, a high-temperature reaction at 400 °C formed [110]-oriented NdNiOxHy without NdNiO2.

  19. Ionospheric earthquake precursors

    International Nuclear Information System (INIS)

    Bulachenko, A.L.; Oraevskij, V.N.; Pokhotelov, O.A.; Sorokin, V.N.; Strakhov, V.N.; Chmyrev, V.M.

    1996-01-01

    Results of experimental study on ionospheric earthquake precursors, program development on processes in the earthquake focus and physical mechanisms of formation of various type precursors are considered. Composition of experimental cosmic system for earthquake precursors monitoring is determined. 36 refs., 5 figs

  20. CHEMICAL VAPOUR DEPOSITION FROM A RADIATION-SENSITIVE PRECURSOR

    DEFF Research Database (Denmark)

    2017-01-01

    The present invention relates in one aspect to a method of depositing a thin film on a substrate by chemical vapour deposition (CVD) from a radiation-sensitive precursor substance. The method comprises the steps of: (i) placing the substrate in a reaction chamber of a CVD system; (ii) heating...... heating pulse followed by an idle period; (iii) during at least one of the idle periods, providing a pressure pulse of precursor substance inside the reaction chamber by feeding at least one precursor substance to the reaction chamber so as to establish a reaction partial pressure for thin film deposition...... is formed. According to a further aspect, the invention relates to a chemical vapour deposition (CVD) system for depositing a thin film onto a substrate using precursor substances containing at least one radiation sensitive species....

  1. Earthquakes: hydrogeochemical precursors

    Science.gov (United States)

    Ingebritsen, Steven E.; Manga, Michael

    2014-01-01

    Earthquake prediction is a long-sought goal. Changes in groundwater chemistry before earthquakes in Iceland highlight a potential hydrogeochemical precursor, but such signals must be evaluated in the context of long-term, multiparametric data sets.

  2. Methods for producing thin film charge selective transport layers

    Science.gov (United States)

    Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

    2018-01-02

    Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

  3. Behavior of Electrochemically Prepared CuInSe{sub 2} as Photovoltaic Absorber in thin Film Solar Cells; Comportamiento del CuInSe{sub 2} Basado en Precursores Electrodepositados como Absorbente Fotovoltaico en Celulas Solares de Lamina Delgada

    Energy Technology Data Exchange (ETDEWEB)

    Guillen, C; Martinez, M A; Dona, J M; Herrero, J; Gutierrez, M T [Ciemat.Madrid (Spain)

    2000-07-01

    Two different objective have been pursued in the present investigation: (1) optimization of the CuInSe{sub 2} preparation parameters from electrodeposited precursors, and (2) evaluation of their photovoltaic behavior by preparing and enhancing Mo/CuInSe{sub 2}/CdS/TCO devices. When Cu-In-Se precursors are directly electrodeposited, the applied potential fit is essential to improve the photovoltaic performance. Suitable absorbers have been also obtained by evaporing an In layer onto electrodeposited Cu-Se precursors. In this case, the substrate temperature during evaporation determines the CuInSe{sub 2} quality. Similar results have been reached by substituting typical Mo-Coated glass substrates by flexible Mo foils. Different TCO tested (ZnO and ITO) have been found equivalent as front electrical contact in the devices. Solar cell performance can be improved by annealing in air at 200 degree centigree. (Author) 46 refs.

  4. The EM Earthquake Precursor

    Science.gov (United States)

    Jones, K. B., II; Saxton, P. T.

    2013-12-01

    Many attempts have been made to determine a sound forecasting method regarding earthquakes and warn the public in turn. Presently, the animal kingdom leads the precursor list alluding to a transmission related source. By applying the animal-based model to an electromagnetic (EM) wave model, various hypotheses were formed, but the most interesting one required the use of a magnetometer with a differing design and geometry. To date, numerous, high-end magnetometers have been in use in close proximity to fault zones for potential earthquake forecasting; however, something is still amiss. The problem still resides with what exactly is forecastable and the investigating direction of EM. After the 1989 Loma Prieta Earthquake, American earthquake investigators predetermined magnetometer use and a minimum earthquake magnitude necessary for EM detection. This action was set in motion, due to the extensive damage incurred and public outrage concerning earthquake forecasting; however, the magnetometers employed, grounded or buried, are completely subject to static and electric fields and have yet to correlate to an identifiable precursor. Secondly, there is neither a networked array for finding any epicentral locations, nor have there been any attempts to find even one. This methodology needs dismissal, because it is overly complicated, subject to continuous change, and provides no response time. As for the minimum magnitude threshold, which was set at M5, this is simply higher than what modern technological advances have gained. Detection can now be achieved at approximately M1, which greatly improves forecasting chances. A propagating precursor has now been detected in both the field and laboratory. Field antenna testing conducted outside the NE Texas town of Timpson in February, 2013, detected three strong EM sources along with numerous weaker signals. The antenna had mobility, and observations were noted for recurrence, duration, and frequency response. Next, two

  5. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

    Science.gov (United States)

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L.; Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-03-24

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  6. Effect of La{sub 0.8}Sr{sub 0.2}MnO{sub 3} powder addition in the precursor solution on the properties of cathode films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Caio Luis Santos; Rangel, Maria do Carmo, E-mail: clssilva@ufba.br, E-mail: mcarmov@ufba.br [Universidade Federal da Bahia (UFBA), Salvador, BA (Brazil). Grupo de Estudo em Cinetica e Catalise; Gama, Leonardo Marques; Paes Junior, Herval Ramos, E-mail: leonardo.m.gama@gmail.com, E-mail: herval@uenf.br [Universidade Estadual do Norte Fluminense Darcy Ribeiro (UENF), Campos dos Goytacazes, RJ (Brazil). Laboratorio de Materiais Avancados; Santos, Jacqueline Amanda Figueiredo dos; Domingues, Rosana Zacarias, E-mail: jac.amanda28@gmail.com, E-mail: rosanazd@ufmg.br [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Laboratorio de Materiais e Pilhas a Combustivel

    2017-01-15

    Films of lanthanum strontium manganite, LSM (La{sub 0.8}Sr{sub 0.2}MnO{sub 3}) were deposited on yttria stabilized zirconia (YSZ) substrates by different methods aiming to establish the most suitable route to prepare cathodes for solid oxide fuel cells (SOFC). Samples were obtained by using a solution of lanthanum, strontium and manganese nitrates or a dispersion of the LSM powder in this solution. Both commercial and synthesized LSM powders were used, the last one obtained by amorphous citrate method. The films were deposited by spray pyrolysis on YSZ substrates prepared by uniaxial and isostatic pressing. Samples were characterized by scanning electron microscopy, confocal laser scanning microscopy, X-ray diffraction and two-probe conductivity measurements. The area specific resistance and relaxation to cathodic activation were measured by electrochemical impedance spectroscopy. The substrate obtained by uniaxial pressing and the commercial LSM produced films with the highest amount of surface cracks. The film obtained from the suspension showed area specific resistance and activation energy lower than the other produced from the solution. For both samples, the cathodic activation process resulted in an initial reduction of the total resistance of around 20%, the sample produced from the suspension being more resistant to relaxation. Therefore, the LSM suspension is more suitable than the salts solution for preparing films by spray pyrolysis on YSZ substrates to obtain efficient cathodes for SOFC. (author)

  7. Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

    KAUST Repository

    Wijeyasinghe, Nilushi; Regoutz, Anna; Eisner, Flurin; Du, Tian; Tsetseris, Leonidas; Lin, Yen-Hung; Faber, Hendrik; Pattanasattayavong, Pichaya; Li, Jinhua; Yan, Feng; McLachlan, Martyn A.; Payne, David J.; Heeney, Martin; Anthopoulos, Thomas D.

    2017-01-01

    spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl

  8. Manufacture of GdBa2Cu3O7−x Superconducting Thin Films Using High-Thermal-Stability Precursors Playing the Role of Intermediate-Phase Grain-Growth Inhibitors

    DEFF Research Database (Denmark)

    Tang, Xiao; He, Dong; Yue, Zhao

    2014-01-01

    We have developed a fluorine-free metal–organic decomposition method using acrylic acid as the solvent for the synthesis of GdBCO superconducting thin films. Commonly used propionic acid was also used to make a comparison with acrylic acid. Acrylic acid was found to be polymerized during drying, ...

  9. Identified EM Earthquake Precursors

    Science.gov (United States)

    Jones, Kenneth, II; Saxton, Patrick

    2014-05-01

    Many attempts have been made to determine a sound forecasting method regarding earthquakes and warn the public in turn. Presently, the animal kingdom leads the precursor list alluding to a transmission related source. By applying the animal-based model to an electromagnetic (EM) wave model, various hypotheses were formed, but the most interesting one required the use of a magnetometer with a differing design and geometry. To date, numerous, high-end magnetometers have been in use in close proximity to fault zones for potential earthquake forecasting; however, something is still amiss. The problem still resides with what exactly is forecastable and the investigating direction of EM. After a number of custom rock experiments, two hypotheses were formed which could answer the EM wave model. The first hypothesis concerned a sufficient and continuous electron movement either by surface or penetrative flow, and the second regarded a novel approach to radio transmission. Electron flow along fracture surfaces was determined to be inadequate in creating strong EM fields, because rock has a very high electrical resistance making it a high quality insulator. Penetrative flow could not be corroborated as well, because it was discovered that rock was absorbing and confining electrons to a very thin skin depth. Radio wave transmission and detection worked with every single test administered. This hypothesis was reviewed for propagating, long-wave generation with sufficient amplitude, and the capability of penetrating solid rock. Additionally, fracture spaces, either air or ion-filled, can facilitate this concept from great depths and allow for surficial detection. A few propagating precursor signals have been detected in the field occurring with associated phases using custom-built loop antennae. Field testing was conducted in Southern California from 2006-2011, and outside the NE Texas town of Timpson in February, 2013. The antennae have mobility and observations were noted for

  10. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  11. Use of different Zn precursors for the deposition of Zn(S,O) buffer layers by chemical bath for chalcopyrite based Cd-free thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saez-Araoz, R.; Lux-Steiner, M.C. [Hahn Meitner Institut, Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Ennaoui, A.; Kropp, T.; Veryaeva, E. [Hahn Meitner Institut, Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co. KG, Munich (Germany)

    2008-10-15

    Progress in fabricating Cu(In,Ga)(S,Se){sub 2} (CIGSSe) solar cells with Zn(S,O) buffer layers prepared by chemical bath deposition (CBD) is discussed. The effect of different Zn salt precursors on solar cell device performance is investigated using production scale CIGSSe absorbers provided by AVANCIS GmbH and Co. KG. The CBD process has been developed at the Hahn-Meitner-Institut (HMI) using zinc nitrate, zinc sulphate or zinc chloride as zinc precursor. An average efficiency of 14.2{+-}0.8% is obtained by using one-layer CBD Zn(S,O) The dominant recombination path for well performing solar cells is discussed based on the results obtained from temperature dependent J(V) analysis. The structure and morphology of buffer layers deposited using zinc nitrate and zinc sulphate has been studied by means of transmission electron micrographs of glass/Mo/CIGSSe/Zn(S,O) structures. Results show a conformal coverage of the absorber by a Zn(S,O) layer of 15-25 nm consisting of nanocrystals with radii of {proportional_to}5 nm. XAES analysis of the buffer layer reveals a similar surface composition for buffer layers deposited with zinc nitrate and zinc sulphate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Nucleation and growth of copper oxide films in MOCVD processes using the β-ketoiminate precursor 4,4'-(1,2-ethanediyldinitrilo)bis(2-pentanonate) copper(II)

    International Nuclear Information System (INIS)

    Condorelli, G.G.; Malandrino, G.; Fragala, I.L.

    1999-01-01

    The MOCVD of CuO has attracted much attention because of its application in high-T c superconducting films and gas sensors. This work focuses on the potential of a β-ketoiminate copper complex as an alternative MOCVD source to β-diketonate complexes. Particular attention has been given to factors such as texturing, roughness, and grain size of the deposit. (orig.)

  13. Investigation of photocalalytic activity of ZnO prepared by spray pyrolis with various precursors

    International Nuclear Information System (INIS)

    Bourfaa, F; Lamri Zeggar, M; A, A; Aida, M S; Attaf, N

    2016-01-01

    Semiconductor photocatalysts such as ZnO has attracted much attention in recent years due to their various applications for the degradation of organic pollutants in water, air and in dye sensitized photovoltaic solar cell. In the present work, ZnO thin films were prepared by ultrasonic spray pyrolysis by using different precursors namely: acetate, chloride and zinc nitrate in order to investigate their influence on ZnO photocatalytic activity. The films crystalline structure was studied by mean of X- ray diffraction measurements (XRD) and the films surface morphology by Scanning Electron Microscopy (SEM). The films optical properties were studied by mean of UV-visible spectroscopy. The prepared films were tested for the degradation of the red reactive dye largely used in textile industry. As a result, we found that the zinc nitrate is the best precursor to prepare ZnO thin films suitable for a good photocatalytic activity. (paper)

  14. Highly efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2-y}S{sub y}/CdS thin-film solar cells by using diethylselenide as selenium precursor

    Energy Technology Data Exchange (ETDEWEB)

    Kadam, Ankur A.; Dhere, Neelkanth G. [Florida Solar Energy Center, University of Central Florida, Cocoa, FL 32922-5703 (United States)

    2010-05-15

    Conventional furnace selenization process was optimized to achieve effective selenization using diethylselenide (C{sub 2}H{sub 5}){sub 2}Se (DESe). An optimized quantity of Na was added to improve V{sub oc}, FF and morphology. Sputter-deposited CuGa and In metallic precursors were homogenized in an inert atmosphere prior to the introduction of DESe followed by rapidly heating to the maximum process temperature to avoid formation of detrimental binary phases. Selenization was carried out in the temperature range 475-515 C followed by sulfurization in dilute H{sub 2}S. Solar cells were completed by depositing CdS heterojunction partner layer, i:ZnO/ZnO:Al window-bilayer and metallic contact fingers. PV conversion efficiency of 13.7% with a V{sub oc} of 540 mV, J{sub sc} of 38.3 mA/cm{sup 2} and FF of 66.3% were obtained on 0.442 cm{sup 2} cell areas. The process can be easily scaled-up for economic large-scale manufacture. (author)

  15. Preparation of superconductor precursor powders

    Science.gov (United States)

    Bhattacharya, Raghunath

    1998-01-01

    A process for the preparation of a precursor metallic powder composition for use in the subsequent formation of a superconductor. The process comprises the steps of providing an electrodeposition bath comprising an electrolyte medium and a cathode substrate electrode, and providing to the bath one or more soluble salts of one or more respective metals which are capable of exhibiting superconductor properties upon subsequent appropriate treatment. The bath is continually energized to cause the metallic and/or reduced particles formed at the electrode to drop as a powder from the electrode into the bath, and this powder, which is a precursor powder for superconductor production, is recovered from the bath for subsequent treatment. The process permits direct inclusion of all metals in the preparation of the precursor powder, and yields an amorphous product mixed on an atomic scale to thereby impart inherent high reactivity. Superconductors which can be formed from the precursor powder include pellet and powder-in-tube products.

  16. Toward a theory of precursors

    International Nuclear Information System (INIS)

    Freivogel, Ben; Giddings, Steven B.; Lippert, Matthew

    2002-01-01

    To better understand the possible breakdown of locality in quantum gravitational systems, we pursue the identity of precursors in the context of the anti-de Sitter/conformal field theory correspondence. Holography implies a breakdown of standard bulk locality which we expect to occur only at extremely high energy. We consider precursors that encode bulk information causally disconnected from the boundary and whose measurement involves nonlocal bulk processes. We construct a toy model of holography which encapsulates the expected properties of precursors and compare it with previous such discussions. If these precursors can be identified in the gauge theory, they are almost certainly Wilson loops, perhaps with decorations, but the relevant information is encoded in the high-energy sector of the theory and should not be observable by low energy measurements. This would be in accord with the locality bound, which serves as a criterion for situations where breakdown of bulk locality is expected

  17. Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

    KAUST Repository

    Wijeyasinghe, Nilushi

    2017-07-28

    This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments.

  18. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  19. Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

    Energy Technology Data Exchange (ETDEWEB)

    Ermakova, E.N.; Sysoev, S.V.; Nikulina, L.D. [Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Acad. Lavrentiev Ave. 3, Novosibirsk 630090 (Russian Federation); Tsyrendorzhieva, I.P.; Rakhlin, V.I. [Favorskii Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, Favorskii Str. 1, Irkutsk 664033 (Russian Federation); Kosinova, M.L., E-mail: marina@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Acad. Lavrentiev Ave. 3, Novosibirsk 630090 (Russian Federation)

    2015-12-20

    Highlights: • The temperature dependences of vapor pressure of four precursors have been measured. • The experimental data were used to calculate standard thermodynamic functions. • The thermodynamic modelling of SiC{sub x}N{sub y} films formation has been performed. - Abstract: Chemical vapor deposition using single-source organosilicon precursors is one of the most effective ways to produce multifunctional SiC{sub x}N{sub y} films. It is worth mentioning that the precursor molecule design affects both the composition and properties of films. Four organosilicon compounds containing a phenyl substituent (namely, trimethylphenylsilane, trimethyl(phenylamino) silane, trimethyl(benzylamino)silane and bis(trimethylsilyl)phenylamine) have been synthesized and characterized as potential CVD precursors for SiC{sub x}N{sub y} films synthesis. The compounds have been shown to be volatile and stable enough to be used in chemical vapor deposition of SiC{sub x}N{sub y} films. Thermodynamic modeling of the film deposition from the gaseous mixture of trimethylphenylsilane and ammonia in Si–C–N–H system has demonstrated that SiC{sub x}N{sub y} films can be deposited, and there is an opportunity to determine the area of appropriate deposition conditions.

  20. Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Shafarman, William N. [Univ. of Delaware, Newark, DE (United States)

    2015-10-12

    This project “Advanced Precursor Reaction Processing for Cu(InGa)(SeS)2 Solar Cells”, completed by the Institute of Energy Conversion (IEC) at the University of Delaware in collaboration with the Department of Chemical Engineering at the University of Florida, developed the fundamental understanding and technology to increase module efficiency and improve the manufacturability of Cu(InGa)(SeS)2 films using the precursor reaction approach currently being developed by a number of companies. Key results included: (1) development of a three-step H2Se/Ar/H2S reaction process to control Ga distribution through the film and minimizes back contact MoSe2 formation; (2) Ag-alloying to improve precursor homogeneity by avoiding In phase agglomeration, faster reaction and improved adhesion to allow wider reaction process window; (3) addition of Sb, Bi, and Te interlayers at the Mo/precursor junction to produce more uniform precursor morphology and improve adhesion with reduced void formation in reacted films; (4) a precursor structure containing Se and a reaction process to reduce processing time to 5 minutes and eliminate H2Se usage, thereby increasing throughput and reducing costs. All these results were supported by detailed characterization of the film growth, reaction pathways, thermodynamic assessment and device behavior.

  1. High-efficiency Thin-film Fe2SiS4 and Fe2GeS4-based Solar Cells Prepared from Low-Cost Solution Precursors. Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Radu, Daniela Rodica [Delaware State Univ., Dover, DE (United States); Univ. of Delaware, Newark, DE (United States); Liu, Mimi [Delaware State Univ., Dover, DE (United States); Hwang, Po-yu [Delaware State Univ., Dover, DE (United States); Berg, Dominik [Rowan Univ., Glassboro, NJ (United States); Dobson, Kevin [Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion (IEC)

    2017-12-28

    The project aimed to provide solar energy education to students from underrepresented groups and to develop a novel, nano-scale approach, in utilizing Fe2SiS4 and Fe2GeS4 materials as precursors to the absorber layer in photovoltaic thin-film devices. The objectives of the project were as follows: 1. Develop and implement one solar-related course at Delaware State University and train two graduate students in solar research. 2. Fabricate and characterize high-efficiency (larger than 7%) Fe2SiS4 and Fe2GeS4-based solar devices. The project has been successful in both the educational components, implementing the solar course at DSU as well as in developing multiple routes to prepare the Fe2GeS4 with high purity and in large quantities. The project did not meet the efficiency objective, however, a functional solar device was demonstrated.

  2. Degradation of Highly Alloyed Metal Halide Perovskite Precursor Inks: Mechanism and Storage Solutions

    Energy Technology Data Exchange (ETDEWEB)

    Dou, Benjia [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Wheeler, Lance M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Christians, Jeffrey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Moore, David [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Harvey, Steven P [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Berry, Joseph J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Barnes, Frank S. [University of Colorado; Shaheen, Sean E. [University of Colorado

    2018-03-02

    Whereas the promise of metal halide perovskite (MHP) photovoltaics (PV) is that they can combine high efficiency with solution-processability, the chemistry occurring in precursor inks is largely unexplored. Herein, we investigate the degradation of MHP solutions based on the most widely used solvents, dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). For the MHP inks studied, which contain formamidinium (FA+), methylammonium (MA+), cesium (Cs+), lead (Pb2+), bromide (Br-), and iodide (I-), dramatic compositional changes are observed following storage of the inks in nitrogen in the dark. We show that hydrolysis of DMF in the precursor solution forms dimethylammonium formate, which subsequently incorporates into the MHP film to compromise the ability of Cs+ and MA+ to stabilize FA+-based MHP. The changes in solution chemistry lead to a modification of the perovskite film stoichiometry, band gap, and structure. The solid precursor salts are stable when ball-milled into a powder, allowing for the storage of large quantities of stoichiometric precursor materials.

  3. Trending analysis of precursor events

    International Nuclear Information System (INIS)

    Watanabe, Norio

    1998-01-01

    The Accident Sequence Precursor (ASP) Program of United States Nuclear Regulatory Commission (U.S.NRC) identifies and categorizes operational events at nuclear power plants in terms of the potential for core damage. The ASP analysis has been performed on yearly basis and the results have been published in the annual reports. This paper describes the trends in initiating events and dominant sequences for 459 precursors identified in the ASP Program during the 1969-94 period and also discusses a comparison with dominant sequences predicted in the past Probabilistic Risk Assessment (PRA) studies. These trends were examined for three time periods, 1969-81, 1984-87 and 1988-94. Although the different models had been used in the ASP analyses for these three periods, the distribution of precursors by dominant sequences show similar trends to each other. For example, the sequences involving loss of both main and auxiliary feedwater were identified in many PWR events and those involving loss of both high and low coolant injection were found in many BWR events. Also, it was found that these dominant sequences were comparable to those determined to be dominant in the predictions by the past PRAs. As well, a list of the 459 precursors identified are provided in Appendix, indicating initiating event types, unavailable systems, dominant sequences, conditional core damage probabilities, and so on. (author)

  4. Synthesis of labelled ecdysone precursors

    International Nuclear Information System (INIS)

    Haag, T.; Hetru, C.; Nakatani, Y.; Luu, B.; Meister, M.; Pichat, L.; Audinot, M.

    1985-01-01

    High specific activity tritiated 3β,14α-dihydroxy-5β-cholest-7-en-6-one, has been prepared using a precursor which permits rapid and easy labelling. This compound is converted to ecdysone under in vitro conditions by insect prothoracic glands, a well known site of ecdysone biosynthesis. (author)

  5. On liquid films on an inclined plate

    KAUST Repository

    BENILOV, E. S.

    2010-08-18

    This paper examines two related problems from liquid-film theory. Firstly, a steady-state flow of a liquid film down a pre-wetted plate is considered, in which there is a precursor film in front of the main film. Assuming the former to be thin, a full asymptotic description of the problem is developed and simple analytical estimates for the extent and depth of the precursor film\\'s influence on the main film are provided. Secondly, the so-called drag-out problem is considered, where an inclined plate is withdrawn from a pool of liquid. Using a combination of numerical and asymptotic means, the parameter range where the classical Landau-Levich-Wilson solution is not unique is determined. © 2010 Cambridge University Press.

  6. Manganite perovskite ceramics, their precursors and methods for forming

    Science.gov (United States)

    Payne, David Alan; Clothier, Brent Allen

    2015-03-10

    Disclosed are a variety of ceramics having the formula Ln.sub.1-xM.sub.xMnO.sub.3, where 0.Itoreq.x.Itoreq.1 and where Ln is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or Y; M is Ca, Sr, Ba, Cd, or Pb; manganite precursors for preparing the ceramics; a method for preparing the precursors; and a method for transforming the precursors into uniform, defect-free ceramics having magnetoresistance properties. The manganite precursors contain a sol and are derived from the metal alkoxides: Ln(OR).sub.3, M(OR).sub.2 and Mn(OR).sub.2, where R is C.sub.2 to C.sub.6 alkyl or C.sub.3 to C.sub.9 alkoxyalkyl, or C.sub.6 to C.sub.9 aryl. The preferred ceramics are films prepared by a spin coating method and are particularly suited for incorporation into a device such as an integrated circuit device.

  7. The Innate Lymphoid Cell Precursor.

    Science.gov (United States)

    Ishizuka, Isabel E; Constantinides, Michael G; Gudjonson, Herman; Bendelac, Albert

    2016-05-20

    The discovery of tissue-resident innate lymphoid cell populations effecting different forms of type 1, 2, and 3 immunity; tissue repair; and immune regulation has transformed our understanding of mucosal immunity and allergy. The emerging complexity of these populations along with compounding issues of redundancy and plasticity raise intriguing questions about their precise lineage relationship. Here we review advances in mapping the emergence of these lineages from early lymphoid precursors. We discuss the identification of a common innate lymphoid cell precursor characterized by transient expression of the transcription factor PLZF, and the lineage relationships of innate lymphoid cells with conventional natural killer cells and lymphoid tissue inducer cells. We also review the rapidly growing understanding of the network of transcription factors that direct the development of these lineages.

  8. Precursor incident program at EDF

    International Nuclear Information System (INIS)

    Fourest, B.; Maliverney, B.; Rozenholc, M.; Piovesan, C.

    1998-01-01

    The precursor program was started by EDF in 1994, after an investigation of the US NRC's Accident Sequence Precursor Program. Since then, reported operational events identified as Safety Outstanding Events have been analyzed whenever possible using probabilistic methods based on PSAs. Analysis provides an estimate of the remaining protection against core damage at the time the incident occurred. Measuring the incidents' severity enables to detect incidents important regarding safety. Moreover, the most efficient feedback actions can be derived from the main accident sequences identified through the analysis. Therefore, incident probabilistic analysis provides a way to assess priorities in terms of treatment and resource allocation, and so, to implement countermeasures preventing further occurrence and development of the most significant incidents. As some incidents cannot be analyzed using this method, probabilistic analysis can only be one among the methods used to assess the nuclear power plants' safety level. Nevertheless, it provides an interesting complement to classical methods of deterministic studies. (author)

  9. Same Precursor, Two Different Products

    DEFF Research Database (Denmark)

    Wood, Suzannah R.; Woods, Keenan N.; Plassmeyer, Paul N.

    2017-01-01

    with significantly larger coherence lengths. This amorphous β-Ga2O3 phase could not be identified using the conventional Bragg diffraction techniques traditionally used to study crystalline metal oxide thin films. The combination of Bragg diffraction and tfPDF provides a much more complete description of film...... with temperature, forming mixtures of Ga-substituted In2O3 and In-substituted β-Ga2O3 with different degrees of substitution. X-ray total scattering and PDF analysis indicate that the majority phase for both the powders and films is an amorphous/nanocrystalline β-Ga2O3 phase, with a minor constituent of In2O3...

  10. Low-temperature Synthesis of Tin(II) Oxide From Tin(II) ketoacidoximate Precursor

    KAUST Repository

    Alshankiti, Buthainah

    2015-01-01

    Sn (II) oxide finds numerous applications in different fields such as thin film transistors1, solar cells2 and sensors.3 In this study we present the fabrication of tin monoxide SnO by using Sn (II) ketoacid oximate complexes as precursors. Tin (II

  11. Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

    NARCIS (Netherlands)

    Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

  12. Radon as an earthquake precursor

    International Nuclear Information System (INIS)

    Planinic, J.; Radolic, V.; Vukovic, B.

    2004-01-01

    Radon concentrations in soil gas were continuously measured by the LR-115 nuclear track detectors during a four-year period. Seismic activities, as well as barometric pressure, rainfall and air temperature were also observed. The influence of meteorological parameters on temporal radon variations was investigated, and a respective equation of the multiple regression was derived. The earthquakes with magnitude ≥3 at epicentral distances ≤200 km were recognized by means of radon anomaly. Empirical equations between earthquake magnitude, epicentral distance and precursor time were examined, and respective constants were determined

  13. Radon as an earthquake precursor

    Energy Technology Data Exchange (ETDEWEB)

    Planinic, J. E-mail: planinic@pedos.hr; Radolic, V.; Vukovic, B

    2004-09-11

    Radon concentrations in soil gas were continuously measured by the LR-115 nuclear track detectors during a four-year period. Seismic activities, as well as barometric pressure, rainfall and air temperature were also observed. The influence of meteorological parameters on temporal radon variations was investigated, and a respective equation of the multiple regression was derived. The earthquakes with magnitude {>=}3 at epicentral distances {<=}200 km were recognized by means of radon anomaly. Empirical equations between earthquake magnitude, epicentral distance and precursor time were examined, and respective constants were determined.

  14. Aqueous-Containing Precursor Solutions for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Liu, Dianyi; Traverse, Christopher J; Chen, Pei; Elinski, Mark; Yang, Chenchen; Wang, Lili; Young, Margaret; Lunt, Richard R

    2018-01-01

    Perovskite semiconductors have emerged as competitive candidates for photovoltaic applications due to their exceptional optoelectronic properties. However, the impact of moisture instability on perovskite films is still a key challenge for perovskite devices. While substantial effort is focused on preventing moisture interaction during the fabrication process, it is demonstrated that low moisture sensitivity, enhanced crystallization, and high performance can actually be achieved by exposure to high water content (up to 25 vol%) during fabrication with an aqueous-containing perovskite precursor. The perovskite solar cells fabricated by this aqueous method show good reproducibility of high efficiency with average power conversion efficiency (PCE) of 18.7% and champion PCE of 20.1% under solar simulation. This study shows that water-perovskite interactions do not necessarily negatively impact the perovskite film preparation process even at the highest efficiencies and that exposure to high contents of water can actually enable humidity tolerance during fabrication in air.

  15. Film Reviews.

    Science.gov (United States)

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  16. Fluorescing macerals from wood precursors

    Energy Technology Data Exchange (ETDEWEB)

    Stout, S A; Bensley, D F

    1987-01-01

    A preliminary investigation into the origin of wood-derived macerals has established the existence of autofluorescent maceral precursors in the secondary xylem of swamp-inhabiting plant species. The optical character and fluorescent properties of microtomed thin-sections of modern woods from the Florida Everglades and Okefenokee Swamp, Georgia are compared to the character and properties of their peatified equivalents from various Everglades and Okefenokee peat horizons and their lignitic equivalents from the Brandon lignite of Vermont and the Trail Ridge lignitic peat from northern Florida. The inherent fluorescence of woody cell walls is believed to be caused by lignin though other cell wall components may contribute. The fluorescence spectra for several wood and cell types had a ..gamma../sub m//sub a//sub x/ of 452 nm and Q value of 0.00. The color as observed in blue light and the spectral geometry as measured in UV light of peatified and lignitic woody cell walls (potential textinites) may change progressively during early coalification. Cell wall-derived maceral material is shown to maintain its fluorescing properties after being converted to a structureless material, perhaps a corpohuminite or humodetrinite precursor. Fluorescing xylem cell contents, such as condensed tannins or essential oils, can maintain the fluorescent character through early coalification. Xylem cell walls and xylem cell contents are shown to provide fluorescing progenitor materials which would not require subsequent infusion with 'lipid' materials to account for their fluorescence as phytoclast material or as macerals in coal. 35 references.

  17. Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

    Directory of Open Access Journals (Sweden)

    Britta Kämpken

    2012-07-01

    Full Text Available In this work the applicability of neopentasilane (Si(SiH34 as a precursor for the formation of silicon nanowires by using gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold nanoparticles have been tested: the spontaneous dewetting of gold films, thermally annealed gold films, deposition of preformed gold nanoparticles, and the use of “liquid bright gold”, a material historically used for the gilding of porcelain and glass. The latter does not only form gold nanoparticles when deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires.

  18. Formation of three-dimensional nano-porous silver films and application toward electrochemical detection of hydrogen peroxide

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Junpeng [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Bian, Xiufang, E-mail: xfbian@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Niu, Yuchao [Department of Materials Science and Engineering, Shandong Jianzhu University, Fengming Road, Lingang Development Zone, Jinan 250101 (China); Bai, Yanwen; Xiao, Xinxin; Yang, Chuncheng; Yang, Jianfei; Yang, Jinyue [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061 (China)

    2013-11-15

    By using the chemically dealloying method, three-dimensional nano-porous silver films (3-D NPSFs) are fabricated into a novel sensor for detecting hydrogen peroxide. The precursor films are prepared by high vacuum magnetron co-sputtering. High-resolution transmission electron microscope (HRTEM) and scanning electron microscope (SEM) are taken to investigate the structure and the micro morphology of the precursor films and nano-porous films. We find that the precursor films are composed of glassy matrix and nanocrystallines. After dealloying, the films exhibit a combination of homogenously distributed pores and silver filaments, and exhibit an open, three dimensional bicontinuous interpenetrating ligament–channel structure. Thickness and morphology of the films can be easily controlled by the sputtering time and alloy composition of the precursor films, respectively. In addition, NPSFs show a good linear responding for the concentration of hydrogen peroxide in phosphate buffered solutions, which indicates NPSFs could be a promising electrochemical material for hydrogen peroxide detection.

  19. High Refractive Organic–Inorganic Hybrid Films Prepared by Low Water Sol-Gel and UV-Irradiation Processes

    Directory of Open Access Journals (Sweden)

    Hsiao-Yuan Ma

    2016-03-01

    Full Text Available Organic-inorganic hybrid sols (Ti–O–Si precursor were first synthesized by the sol-gel method at low addition of water, and were then employed to prepare a highly refractive hybrid optical film. This film was obtained by blending the Ti–O–Si precursor with 2-phenylphenoxyethyl acrylate (OPPEA to perform photo-polymerization by ultraviolet (UV irradiation. Results show that the film transparency of poly(Ti–O–Si precursor-co-OPPEA film is higher than that of a pure poly(Ti–O–Si precursor film, and that this poly(Ti–O–Si precursor-co-OPPEA hybrid film exhibits a high transparency of ~93.7% coupled with a high refractive index (n of 1.83 corresponding to a thickness of 2.59 μm.

  20. Oriented monolayer film of Gd2O3:0.05 Eu crystallites: quasi-topotactic transformation of the hydroxide film and drastic enhancement of photoluminescence properties.

    Science.gov (United States)

    Hu, Linfeng; Ma, Renzhi; Ozawa, Tadashi C; Sasaki, Takayoshi

    2009-01-01

    Caught on film: A semitransparent and intensely luminescent monolayer film of oriented Gd(2)O(3):0.05 Eu platelet crystallites is fabricated by annealing the precursor hydroxide film (see scheme). The photoluminescence properties of the as-transformed film are greatly improved over those of the hydroxide film, and are much more pronounced than those of the corresponding Gd(2)O(3):0.05 Eu powder.

  1. Rapid synthesis of macrocycles from diol precursors

    DEFF Research Database (Denmark)

    Wingstrand, Magnus; Madsen, Charlotte Marie; Clausen, Mads Hartvig

    2009-01-01

    A method for the formation of synthetic macrocycles with different ring sizes from diols is presented. Reacting a simple diol precursor with electrophilic reagents leads to a cyclic carbonate, sulfite or phosphate in a single step in 25-60% yield. Converting the cyclization precursor to a bis-ele...

  2. Precursors in photonic crystals - art. no. 618218

    NARCIS (Netherlands)

    Uitham, R.; Hoenders, B. J.; DeLaRue, RM; Viktorovitch, P; Lopez, C; Midrio, M

    2006-01-01

    We derive the Sommerfeld precursor and present the first calculations for the Brillouin precursor that result from the transmission of a pulse through a photonic crystal. The photonic crystal is modelled by a one-dimensional N-layer medium and the pulse is a generic electromagnetic plane wave packet

  3. The Sommerfeld precursor in photonic crystals

    NARCIS (Netherlands)

    Uitham, R; Hoenders, BJ

    2006-01-01

    We calculate the Sommerfeld precursor that results after transmission of a generic electromagnetic plane wave pulse with transverse electric polarization, through a one-dimensional rectangular N-layer photonic crystal with two slabs per layer. The shape of this precursor equals the shape of the

  4. Bioinspired magnetite synthesis via solid precursor phases

    NARCIS (Netherlands)

    Lenders, J.J.M.; Mirabello, G.; Sommerdijk, N.A.J.M.

    2016-01-01

    Living organisms often exploit solid but poorly ordered mineral phases as precursors in the biomineralization of their inorganic body parts. Generally speaking, such precursor-based approaches allow the organisms-without the need of high supersaturation levels-to accumulate significant quantities of

  5. The interrelationships of mathematical precursors in kindergarten.

    Science.gov (United States)

    Cirino, Paul T

    2011-04-01

    This study evaluated the interrelations among cognitive precursors across quantitative, linguistic, and spatial attention domains that have been implicated for math achievement in young children. The dimensionality of the quantity precursors was evaluated in 286 kindergarteners via latent variable techniques, and the contribution of precursors from each domain was established for small sums addition. Results showed a five-factor structure for the quantity precursors, with the major distinction being between nonsymbolic and symbolic tasks. The overall model demonstrated good fit and strong predictive power (R(2)=55%) for addition number combinations. Linguistic and spatial attention domains showed indirect relationships with outcomes, with their effects mediated by symbolic quantity measures. These results have implications for the measurement of mathematical precursors and yield promise for predicting future math performance. Copyright © 2010 Elsevier Inc. All rights reserved.

  6. Chemical precursor impact on the properties of Cu{sub 2}ZnSnS{sub 4} absorber layer

    Energy Technology Data Exchange (ETDEWEB)

    Vashistha, Indu B., E-mail: indu-139@yahoo.com; Sharma, S. K. [Department of Physics, Malaviya National Institute of Technology, Jaipur 302017 (India); Sharma, Mahesh C. [National Institute of Solar Energy, Gurgaon 122003 (India)

    2016-04-13

    In present work impact of different chemical precursor on the deposition of solar absorber layer Cu{sub 2}ZnSnS{sub 4} (CZTS) were studied by Chemical Bath Deposition (CBD) method without using expensive vacuum facilities and followed by annealing. As compared to the other deposition methods, CBD method is interesting one because it is simple, reproducible, non-hazardous, cost effective and well suited for producing large-area thin films at low temperatures, although effect of precursors and concentration plays a vital role in the deposition. So, the central theme of this work is optimizing and controlling of chemical reactions for different chemical precursors. Further Effect of different chemical precursors i.e. sulphate and chloride is analyzed by structural, morphological, optical and electrical properties. The X-ray diffraction (XRD) of annealed CZTS thin film revealed that films were polycrystalline in nature with kestarite tetragonal crystal structure. The Atomic Force micrographs (AFM) images indicated total coverage compact film and as well as growth of crystals. The band gap of annealed CZTS films was found in the range of optimal band gap by absorption spectroscopy.

  7. Characterization of the microporous HDPE film with alpha alumina

    International Nuclear Information System (INIS)

    Park, Jong Seok; Sung, Hae Jun; Gwon, Hui Jeong; Lim, Youn Mook; Nho, Young Chang

    2010-01-01

    The effects of the addition of the alpha alumina on the properties of the microporous high density polyethylene (HDPE) films were investigated. The particle size and the specific surface area of alpha alumina were 400 nm and 7.3 m 2 g -1 . The HDPE and the alpha alumina were mixed to obtain the precursor film in the twin extruder. The precursor films were uni-axially stretched up to 600% in oven 120 .deg. C and then the stretched HDPE films were irradiated by gamma rays. The pore volume of the microporous HDPE films was increased with an increasing content of the alpha alumina. The mechanical characteristics of the microporous HDPE films were increased with a content of alpha alumina up to 15%, but decreased at 20%. The electrochemical stability of the microporous HDPE film containing alpha alumia was increased with an increased irradiation dose up ti 50 kGy

  8. Thermal decomposition and spectroscopic investigation of a new aqueous glycolato(-peroxo) Ti(IV) solution-gel precursor

    International Nuclear Information System (INIS)

    De Dobbelaere, Christopher; Mullens, Jules; Hardy, An; Van Bael, Marlies K.

    2011-01-01

    Highlights: → A totally water based glycolato-Ti(IV) precursor is presented and characterized. → The precursors' thermal decomposition profile depends on the ligand to metal ratio. → Titanium is coordinated in an unidentate fashion by the glycolate anion. → Smooth and uniform TiO 2 films can be prepared from the precursor solution. - Abstract: A new aqueous solution-gel precursor based on water soluble glycolato(-peroxo)-Ti(IV) complexes is developed for the preparation of TiO 2 films. With regard to the decomposition of complexes towards oxide formation, it is important to gain insight in the chemical transformations inside the precursor during thermal treatment. Therefore, the thermo-oxidative decomposition pathway of a gel obtained by slow evaporation of the precursor solution is described based on hyphenated thermogravimetric analysis with Fourier transform infrared spectroscopy (TGA-FTIR) and mass spectrometry (TGA-MS). Pure glycolic acid is used as a reference system for this study. By varying the molar glycolic acid to Ti(IV) ratio, the thermal decomposition of the gel can be drastically shortened and the profile's course changed. Gel structure and chemical changes in the gel upon heating are also studied by means of off-line FTIR. A unidentate coordination of the titanium(IV) ion by the carboxylate group of the glycolato ligands and the involvement of the hydroxyl group is confirmed. Phase formation at certain points in the thermal decomposition is studied by X-ray diffraction and Raman spectroscopy. Finally, it is proven that the new precursor is a valuable candidate for the deposition of low carbon containing solution-gel films which can ultimately be converted into smooth and uniform TiO 2 films.

  9. Thermal decomposition and spectroscopic investigation of a new aqueous glycolato(-peroxo) Ti(IV) solution-gel precursor

    Energy Technology Data Exchange (ETDEWEB)

    De Dobbelaere, Christopher, E-mail: christopher.dedobbelaere@uhasselt.be [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Mullens, Jules, E-mail: jules.mullens@uhasselt.be [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Hardy, An, E-mail: an.hardy@uhasselt.be [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, Agoralaan Building D, B-3590 Diepenbeek (Belgium); IMEC vzw, Division IMOMEC, Agoralaan Building D, B-3590 Diepenbeek (Belgium)

    2011-06-10

    Highlights: {yields} A totally water based glycolato-Ti(IV) precursor is presented and characterized. {yields} The precursors' thermal decomposition profile depends on the ligand to metal ratio. {yields} Titanium is coordinated in an unidentate fashion by the glycolate anion. {yields} Smooth and uniform TiO{sub 2} films can be prepared from the precursor solution. - Abstract: A new aqueous solution-gel precursor based on water soluble glycolato(-peroxo)-Ti(IV) complexes is developed for the preparation of TiO{sub 2} films. With regard to the decomposition of complexes towards oxide formation, it is important to gain insight in the chemical transformations inside the precursor during thermal treatment. Therefore, the thermo-oxidative decomposition pathway of a gel obtained by slow evaporation of the precursor solution is described based on hyphenated thermogravimetric analysis with Fourier transform infrared spectroscopy (TGA-FTIR) and mass spectrometry (TGA-MS). Pure glycolic acid is used as a reference system for this study. By varying the molar glycolic acid to Ti(IV) ratio, the thermal decomposition of the gel can be drastically shortened and the profile's course changed. Gel structure and chemical changes in the gel upon heating are also studied by means of off-line FTIR. A unidentate coordination of the titanium(IV) ion by the carboxylate group of the glycolato ligands and the involvement of the hydroxyl group is confirmed. Phase formation at certain points in the thermal decomposition is studied by X-ray diffraction and Raman spectroscopy. Finally, it is proven that the new precursor is a valuable candidate for the deposition of low carbon containing solution-gel films which can ultimately be converted into smooth and uniform TiO{sub 2} films.

  10. Nucleation of Organic Molecules via a Hot Precursor State: Pentacene on Amorphous Mica

    Science.gov (United States)

    2013-01-01

    Organic thin films have attracted considerable interest due to their applicability in organic electronics. The classical scenario for thin film nucleation is the diffusion-limited aggregation (DLA). Recently, it has been shown that organic thin film growth is better described by attachment-limited aggregation (ALA). However, in both cases, an unusual relationship between the island density and the substrate temperature was observed. Here, we present an aggregation model that goes beyond the classical DLA or ALA models to explain this behavior. We propose that the (hot) molecules impinging on the surface cannot immediately equilibrate to the substrate temperature but remain in a hot precursor state. In this state, the molecules can migrate considerable distances before attaching to a stable or unstable island. This results in a significantly smaller island density than expected by assuming fast equilibration and random diffusion. We have applied our model to pentacene film growth on amorphous Muscovite mica. PMID:24340130

  11. Designing high performance precursors for atomic layer deposition of silicon oxide

    Energy Technology Data Exchange (ETDEWEB)

    Mallikarjunan, Anupama, E-mail: mallika@airproducts.com; Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O' Neill, Mark L. [Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Derecskei-Kovacs, Agnes [Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, Pennsylvania 18195 (United States); Han, Bing [Air Products and Chemicals, Inc., 2 Dongsanhuan North Road, Chaoyang District, Beijing 100027 (China)

    2015-01-15

    Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

  12. Influence of initial sulfur content in precursor solution for the growth of molybdenum disulfide

    Science.gov (United States)

    Tan, A. L.; Ng, S. S.; Abu Hassan, H.

    2018-04-01

    This work investigated the influence of initial sulfur content in the precursor solution for the growth of molybdenum disulfide (MoS2) films by thermal vapour sulfurization (TVS) with sol-gel spin coating as pre-deposition technique. The early introduction of sulfur shows the presence of grains are uniformly distributed and homogeneous on the surface of the film. MoS2 (002) planes are detected for both films with and without initial sulfur conditions, however, the presence of initial sulfur contents gives slightly higher intensity of diffraction peak. Two phonon modes for MoS2, namely the E2g 1 (in-plane) and the A1g (out-of plane), are well detected from which the frequency difference of Raman peaks between E2g 1 and A1g suggest the grown MoS2 consisted of multi-layers. There is a slight shift of E2g 1 which is caused by the carbon impurities but no shift for A1g. Besides, MoS2 film with the presence of initial sulfur content shows better crystal as indicated by its narrower Raman peaks linewidth. Two broad absorption peaks of MoS2 are detected at 614nm and 665nm. Hence, the early introduction of sulfur content in prepared precursor solution is one way of optimizing the growth of MoS2 films.

  13. Biochemical Removal of HAP Precursors From Coal

    International Nuclear Information System (INIS)

    Olson, G.; Tucker, L.; Richards, J.

    1997-07-01

    This project addresses DOE's interest in advanced concepts for controlling emissions of air toxics from coal-fired utility boilers. We are determining the feasibility of developing a biochemical process for the precombustion removal of substantial percentages of 13 inorganic hazardous air pollutant (HAP) precursors from coal. These HAP precursors are Sb, As, Be, Cd, Cr, Cl, Co, F, Pb, Hg, Mn, Ni, and Se. Although rapid physical coal cleaning is done routinely in preparation plants, biochemical processes for removal of HAP precursors from coal potentially offer advantages of deeper cleaning, more specificity, and less coal loss. Compared to chemical processes for coal cleaning, biochemical processes potentially offer lower costs and milder process conditions. Pyrite oxidizing bacteria, most notably Thiobacillusferrooxidans, are being evaluated in this project for their ability to remove HAP precursors from U.S. coals

  14. Progress in molecular precursors for electronic materials

    Energy Technology Data Exchange (ETDEWEB)

    Buhro, W.E. [Washington Univ., St. Louis, MO (United States)

    1996-09-01

    Molecular-precursor chemistry provides an essential underpinning to all electronic-materials technologies, including photovoltaics and related areas of direct interest to the DOE. Materials synthesis and processing is a rapidly developing field in which advances in molecular precursors are playing a major role. This article surveys selected recent research examples that define the exciting current directions in molecular-precursor science. These directions include growth of increasingly complex structures and stoichiometries, surface-selective growth, kinetic growth of metastable materials, growth of size-controlled quantum dots and quantum-dot arrays, and growth at progressively lower temperatures. Continued progress in molecular-precursor chemistry will afford precise control over the crystal structures, nanostructures, and microstructures of electronic materials.

  15. Biochemical Removal of HAP Precursors From Coal

    Energy Technology Data Exchange (ETDEWEB)

    Olson, G.; Tucker, L.; Richards, J.

    1997-07-01

    This project addresses DOE`s interest in advanced concepts for controlling emissions of air toxics from coal-fired utility boilers. We are determining the feasibility of developing a biochemical process for the precombustion removal of substantial percentages of 13 inorganic hazardous air pollutant (HAP) precursors from coal. These HAP precursors are Sb, As, Be, Cd, Cr, Cl, Co, F, Pb, Hg, Mn, Ni, and Se. Although rapid physical coal cleaning is done routinely in preparation plants, biochemical processes for removal of HAP precursors from coal potentially offer advantages of deeper cleaning, more specificity, and less coal loss. Compared to chemical processes for coal cleaning, biochemical processes potentially offer lower costs and milder process conditions. Pyrite oxidizing bacteria, most notably Thiobacillusferrooxidans, are being evaluated in this project for their ability to remove HAP precursors from U.S. coals.

  16. Probabilistic precursor analysis - an application of PSA

    International Nuclear Information System (INIS)

    Hari Prasad, M.; Gopika, V.; Sanyasi Rao, V.V.S.; Vaze, K.K.

    2011-01-01

    Incidents are inevitably part of the operational life of any complex industrial facility, and it is hard to predict how various contributing factors combine to cause the outcome. However, it should be possible to detect the existence of latent conditions that, together with the triggering failure(s), result in abnormal events. These incidents are called precursors. Precursor study, by definition, focuses on how a particular event might have adversely developed. This paper focuses on the events which can be analyzed to assess their potential to develop into core damage situation and looks into extending Probabilistic Safety Assessment techniques to precursor studies and explains the benefits through a typical case study. A preliminary probabilistic precursor analysis has been carried out for a typical NPP. The major advantages of this approach are the strong potential for augmenting event analysis which is currently carried out purely on deterministic basis. (author)

  17. nanoparticles synthesized by citrate precursor m

    African Journals Online (AJOL)

    user

    (M=Co, Cu) nanoparticles synthesized by citrate precursor method ... The structural characterization was carried out using an X-ray Diffractometer (Rikagu Miniflex, Japan) ..... His current area of interest includes magnetic nanomaterials.

  18. Planar half-cell shaped precursor body

    DEFF Research Database (Denmark)

    2015-01-01

    The invention relates to a half-cell shaped precursor body of either anode type or cathode type, the half-cell shaped precursor body being prepared to be free sintered to form a sintered or pre-sintered half-cell being adapted to be stacked in a solid oxide fuel cell stack. The obtained half......-cell has an improved planar shape, which remains planar also after a sintering process and during temperature fluctuations....

  19. Analysis of nitrogen species in titanium oxynitride ALD films

    Energy Technology Data Exchange (ETDEWEB)

    Sowińska, Małgorzata, E-mail: Malgorzata.Sowinska@b-tu.de [Brandenburgische Technische Universität Cottbus-Senftenberg, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany); Brizzi, Simone; Das, Chittaranjan [Brandenburgische Technische Universität Cottbus-Senftenberg, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany); Kärkkänen, Irina; Schneidewind, Jessica; Naumann, Franziska; Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Henkel, Karsten; Schmeißer, Dieter [Brandenburgische Technische Universität Cottbus-Senftenberg, Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)

    2016-09-15

    Titanium oxynitride films are prepared by plasma enhanced atomic layer deposition method using two different precursors and nitrogen sources. Synchrotron radiation-based X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are used to characterize the nitrogen species incorporated within these films depending on the deposition parameters. It is found that nitrogen atoms in these films are differently bonded. In particular, it can be distinguished between Ti−ON and Ti−N bonding configurations and molecular nitrogen species caused by precursor fragments.

  20. Caracterización de recubrimientos sintetizados por el método de los precursores poliméricos

    Directory of Open Access Journals (Sweden)

    Jorge Hernando Bautista Ruiz

    2012-03-01

    Full Text Available Ceramic films were formed SiO2-TiO2 system synthesized by the polymeric precursor method from tetraethyl orthosilicate (TEOS and Titanium tetrabutoxide (TBT, a hydroxycarboxylic acid (citric acid and polyhydric alcohol (ethylene glycol. The films were deposited monolayer on substrates of AISI 304 steel using the immersion technique (dip-coating. Concentrations were used as precursors Si (silicon 10% Ti (Titanium 90%, Si 30% Ti 70% and Si 50% Ti 50% in the system. The influence of coatings on corrosion behavior of the substrate in a solution of hydrochloric acid (HCl, using the technique of Electrochemical Impedance Spectroscopy (EIS. Additionally, the topography was evaluated by scanning electronmicroscopy (SEM and adhesion of coatings to the substrate. It was found that the values of these parameters change substantially depending on the concentrations of the precursors used in synthesis.

  1. Electrodeposition of Zn and Cu–Zn alloy from ZnO/CuO precursors in deep eutectic solvent

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Xueliang [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zou, Xingli, E-mail: xinglizou@shu.edu.cn [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Lu, Xionggang, E-mail: luxg@shu.edu.cn [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Lu, Changyuan; Cheng, Hongwei; Xu, Qian [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zhou, Zhongfu [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Institute of Mathematics and Physics, Aberystwyth University, Aberystwyth SY23 3BZ (United Kingdom)

    2016-11-01

    Graphical abstract: Micro/nanostructured Zn and Cu–Zn alloy films have been electrodeposited directly from ZnO/CuO precursors in ChCl/urea-based DES, the typical nucleation-growth mechanism and the micro/nanostructures-formation process are determined. Display Omitted - Highlights: • Micro/nanostructured Zn films have been electrodeposited directly from ZnO precursor in deep eutectic solvent (DES). • The morphology of the Zn electrodeposits depends on the cathodic potential and temperature. • The electrodeposited Zn films exhibit homogeneous morphologies with controllable particle sizes and improved corrosion resistance. • Cu–Zn alloy films have also been electrodeposited directly from their metal oxides precursors in DES. - Abstract: The electrodeposition of Zn and Cu–Zn alloy has been investigated in choline chloride (ChCl)/urea (1:2 molar ratio) based deep eutectic solvent (DES). Cyclic voltammetry study demonstrates that the reduction of Zn(II) to Zn is a diffusion-controlled quasi-reversible, one-step, two electrons transfer process. Chronoamperometric investigation indicates that the electrodeposition of Zn on a Cu electrode typically involves three-dimensional instantaneous nucleation with diffusion-controlled growth process. Micro/nanostructured Zn films can be obtained by controlling the electrodeposition potential and temperature. The electrodeposited Zn crystals preferentially orient parallel to the (101) plane. The Zn films electrodeposited under more positive potentials and low temperatures exhibit improved corrosion resistance in 3 wt% NaCl solution. In addition, Cu–Zn alloy films have also been electrodeposited directly from CuO–ZnO precursors in ChCl/urea-based DES. The XRD analysis indicates that the phase composition of the electrodeposited Cu–Zn alloy depends on the electrodeposition potential.

  2. Texture of high temperature superconductor thick films TI-1223 and TI-2223/LaAlO3 deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Nguyen Xuan, H.; Beauquis, S.; Galez, Ph.; Jorda, J.L.; Phok, S.; De-Barros, D.

    2004-01-01

    Superconducting TI-1223 and TI-2223 films have been prepared in a two steps process: deposition of Ba:Ca:Cu = 2:2:3 precursor by spray pyrolysis and ex-situ thallination. Pure textured TI-1223 films with good superconducting properties (T c =113 K and J c =0.7 MA/cm 2 at 77 K, 0T) have been obtained. Almost pure TI-2223 films have been obtained when precursor films have been thallinated with fluorinated sources. (orig.)

  3. Rheological study of a gel-forming precursor for superconducting YBa2Cu3O/sub 7-//sub x/

    International Nuclear Information System (INIS)

    Khan, S.A.; Barboux, P.; Bagley, B.G.; Tarascon, J.M.

    1988-01-01

    Rheological measurements are used to monitor the sol-gel behavior of a superconducting precursor. A precursor made with an aged yttrium component [Y(OH) 3 ] has a much higher elastic modulus (G') and complex viscosity (eta*) but the same loss modulus (G'') compared to that made with a fresher yttrium solution. The G''/G' ratio is less than unity for the older solution but greater than 1 for the fresher sample, indicating that the former solution has a more gel-like character. The high viscosity sample gives better fired thick-film superconducting properties but has a shorter shelf life. Measurements on yttrium components of different age show differences in viscosity and G''/G' which correlate with the behavior of the oxide precursors. Reshearing the precursor solution at any stage during its gelation process can cause irreversible changes in the gel structure

  4. Structural, dielectric and ferroelectric characterization of PZT thin films

    Directory of Open Access Journals (Sweden)

    Araújo E.B.

    1999-01-01

    Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

  5. Radiochemical Means of Investigating Delayed Neutron Precursors

    International Nuclear Information System (INIS)

    Marmol, P. del

    1968-01-01

    Fast radiochemical methods used now for the determination of delayed neutron precursors are classified and reviewed: precipitations, solvent extractions, range experiments, milking, gas sweeping, isotopic and ion exchange, hot atom reactions and diffusion loss. Advantages and limitations of irradiation systems with respect to fast separations are discussed: external beams which allow faster separations only have low neutron fluxes, internal beams which are mostly fit for gaseous reactions; and rabbits for solution irradiations. Future prospects of radiochemical procedures are presented; among these, studies should be mostly oriented towards gaseous reactions which offer possibilities of isolating very short-lived delayed neutron precursors. Chemical procedures for delayed neutron precursor detection are compared with mass spectrometric and isotope separator techniques; it is concluded that the methods are complementary. (author)

  6. Radiochemical Means of Investigating Delayed Neutron Precursors

    International Nuclear Information System (INIS)

    Marmol, P. del

    1968-01-01

    Fast radiochemical methods used now for the determination of delayed neutron precursors are classified and reviewed: precipitations, solvent extractions, range experiments, milking, gas sweeping, isotopic and ion exchange, hot-atom reactions and diffusion loss. Advantages and limitations of irradiation systems with respect to fast separations are discussed: external beams which allow faster separations only have low neutron fluxes, internal beams which are mostly fit for gaseous reactions; and rabbits for solution irradiations. Future prospects of radiochemical procedures are presented; among these, studies should be mostly oriented towards gaseous reactions which offer possibilities of isolating very short-lived delayed neutron precursors. Chemical procedures for delayed neutron precursor detection are compared with mass spectrometric and isotope-separator techniques; it is concluded that the methods are complementary. (author)

  7. Precursors prior to type IIn supernova explosions are common: Precursor rates, properties, and correlations

    Energy Technology Data Exchange (ETDEWEB)

    Ofek, Eran O.; Steinbok, Aviram; Arcavi, Iair; Gal-Yam, Avishay; Tal, David; Ben-Ami, Sagi; Yaron, Ofer [Benoziyo Center for Astrophysics, Weizmann Institute of Science, 76100 Rehovot (Israel); Sullivan, Mark [School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom); Shaviv, Nir J. [Racah Institute of Physics, The Hebrew University, 91904 Jerusalem (Israel); Kulkarni, Shrinivas R. [Cahill Center for Astronomy and Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Nugent, Peter E. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Kasliwal, Mansi M. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Cenko, S. Bradley [Astrophysics Science Division, NASA/Goddard Space Flight Center, Mail Code 661, Greenbelt, MD 20771 (United States); Laher, Russ; Surace, Jason [Spitzer Science Center, California Institute of Technology, M/S 314-6, Pasadena, CA 91125 (United States); Bloom, Joshua S.; Filippenko, Alexei V. [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Silverman, Jeffrey M. [Department of Astronomy, University of Texas, Austin, TX 78712 (United States)

    2014-07-10

    There is a growing number of Type IIn supernovae (SNe) which present an outburst prior to their presumably final explosion. These precursors may affect the SN display, and are likely related to poorly charted phenomena in the final stages of stellar evolution. By coadding Palomar Transient Factory (PTF) images taken prior to the explosion, here we present a search for precursors in a sample of 16 Type IIn SNe. We find five SNe IIn that likely have at least one possible precursor event (PTF 10bjb, SN 2010mc, PTF 10weh, SN 2011ht, and PTF 12cxj), three of which are reported here for the first time. For each SN we calculate the control time. We find that precursor events among SNe IIn are common: at the one-sided 99% confidence level, >50% of SNe IIn have at least one pre-explosion outburst that is brighter than 3 × 10{sup 7} L{sub ☉} taking place up to 1/3 yr prior to the SN explosion. The average rate of such precursor events during the year prior to the SN explosion is likely ≳ 1 yr{sup –1}, and fainter precursors are possibly even more common. Ignoring the two weakest precursors in our sample, the precursors rate we find is still on the order of one per year. We also find possible correlations between the integrated luminosity of the precursor and the SN total radiated energy, peak luminosity, and rise time. These correlations are expected if the precursors are mass-ejection events, and the early-time light curve of these SNe is powered by interaction of the SN shock and ejecta with optically thick circumstellar material.

  8. Thin films

    International Nuclear Information System (INIS)

    Strongin, M.; Miller, D.L.

    1976-01-01

    This article reviews the phenomena that occur in films from the point of view of a solid state physicist. Films form the basis for many established and developing technologies. Metal layers have always been important for optical coatings and as protective coatings. In the most sophisticated cases, films and their interaction on silicon surfaces form the basis of modern electronic technology. Films of silicon, GaAs and composites of these materials promise to lead to practical photovoltaic devices

  9. Nuclear films

    International Nuclear Information System (INIS)

    Malone, Peter.

    1985-01-01

    This booklet is a resource for the study of feature films that highlight the theme of nuclear war. It provides basic credits and brief indication of the theme, treatment, quality and particular notable aspects; and a series of questions raised by the film. Seventy feature films and thirty documentaries are examined

  10. Report on Fukushima Daiichi NPP precursor events

    International Nuclear Information System (INIS)

    2014-01-01

    The main questions to be answered by this report were: The Fukushima Daiichi NPP accident, could it have been prevented? If there is a next severe accident, may it be prevented? To answer the first question, the report addressed several aspects. First, the report investigated whether precursors to the Fukushima Daiichi NPP accident existed in the operating experience; second, the reasons why these precursors did not evolve into a severe accident. Third, whether lessons learned from these precursor events were adequately considered by member countries; and finally, if the operating experience feedback system needs to be improved, based on the previous analysis. To address the second question which is much more challenging, the report considered precursor events identified through a search and analysis of the IRS database and also precursors events based on risk significance. Both methods can point out areas where further work may be needed, even if it depends heavily on design and site-specific factors. From the operating experience side, more efforts are needed to ensure timely and full implementation of lessons learnt from precursor events. Concerning risk considerations, a combined use of risk precursors and operating experience may drive to effective changes to plants to reduce risk. The report also contains a short description and evaluation of selected precursors that are related to the course of the Fukushima Daiichi NPP accident. The report addresses the question whether operating experience feedback can be effectively used to identify plant vulnerabilities and minimize potential for severe core damage accidents. Based on several of the precursor events national or international in-depth evaluations were started. The vulnerability of NPPs due to external and internal flooding has clearly been addressed. In addition to the IRS based investigation, the WGRISK was asked to identify important precursor events based on risk significance. These precursors have

  11. Sulfurization of sputtered Ag–In precursors for AgInS{sub 2} solar cell absorber layers

    Energy Technology Data Exchange (ETDEWEB)

    Anantha Sunil, M. [Energy and Health Monitoring Instrumentation Laboratory, Department of Instrumentation & Applied Physics, Indian Institute of Science, Bangalore 560012 (India); Thota, Narayana [Advanced Materials Research Laboratory, Department of Physics, Yogi Vemana University, Kadapa 516003 (India); Deepa, K.G. [Energy and Health Monitoring Instrumentation Laboratory, Department of Instrumentation & Applied Physics, Indian Institute of Science, Bangalore 560012 (India); Jampana, Nagaraju, E-mail: solarjnr@gmail.com [Energy and Health Monitoring Instrumentation Laboratory, Department of Instrumentation & Applied Physics, Indian Institute of Science, Bangalore 560012 (India)

    2015-11-30

    Silver indium sulfide (AgInS{sub 2}) thin films are deposited by sequential sputtering of metallic precursor [Ag/In] followed by sulfurization. Effect of substrate temperature (T{sub sub}) during sulfurization process on the film growth is studied by varying the substrate temperature from 350 to 500 °C. Films prepared above 350 °C showed a mixture of orthorhombic and tetragonal phases of AgInS{sub 2} with tetragonal phase being dominant. Better crystalline, nearly stoichiometric and p-type films are obtained at a substrate temperature of 500 °C. The characteristic A{sub 1} mode of AgInS{sub 2} chalcopyrite structure is observed in the Raman spectra at 274 cm{sup −1} for the films prepared above 350 °C. The grain size of the film increases from 489 to 895 nm with the increase in substrate temperature. The binding energies of the constituent elements are determined using XPS. The band gap of AgInS{sub 2} films is in the range of 1.64–1.92 eV and the absorption coefficient is found to be > 10{sup 4} cm{sup −1}. Preliminary studies on the AgInS{sub 2}/ZnS solar cell showed an efficiency of 0.3%. - Highlights: • AgInS{sub 2} films are grown by sulfurization of sputtered metal precursors. • Effect of substrate temperature on the growth of AgInS{sub 2} films is studied. • Films sulfurized at 500 °C have the best structural and opto-electrical properties. • AgInS{sub 2}/ZnS solar cell has been fabricated with an efficiency of ~ 0.3%.

  12. Sol-gel precursors and products thereof

    Science.gov (United States)

    Warren, Scott C.; DiSalvo, Jr., Francis J.; Weisner, Ulrich B.

    2017-02-14

    The present invention provides a generalizable single-source sol-gel precursor capable of introducing a wide range of functionalities to metal oxides such as silica. The sol-gel precursor facilitates a one-molecule, one-step approach to the synthesis of metal-silica hybrids with combinations of biological, catalytic, magnetic, and optical functionalities. The single-source precursor also provides a flexible route for simultaneously incorporating functional species of many different types. The ligands employed for functionalizing the metal oxides are derived from a library of amino acids, hydroxy acids, or peptides and a silicon alkoxide, allowing many biological functionalities to be built into silica hybrids. The ligands can coordinate with a wide range of metals via a carboxylic acid, thereby allowing direct incorporation of inorganic functionalities from across the periodic table. Using the single-source precursor a wide range of functionalized nanostructures such as monolith structures, mesostructures, multiple metal gradient mesostructures and Stober-type nanoparticles can be synthesized. ##STR00001##

  13. Precursor Dependent Structural Properties and Antibacterial Activity ...

    Indian Academy of Sciences (India)

    71

    10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30 ... absorption spectroscopy, Scanning electron microscopy (SEM) and Zeta ... The antibacterial activity of the synthesized CuO were studied against human .... Sample d : Copper oxide synthesized with cupric sulphate as precursor ...... Chem.4 86.

  14. Biochemical Removal of HAP Precursors from Coal

    Energy Technology Data Exchange (ETDEWEB)

    Olson, Gregory J

    1997-05-12

    Column biooxidation tests with Kentucky coal confirmed results of earlier shake flask tests showing significant removal from the coal of arsenic, selenium, cobalt, manganese, nickel and cadmium. Rates of pyrite biooxidation in Kentucky coal were only slightly more than half the rates found previously for Indiana and Pittsburgh coals. Removal of pyrite from Pittsburgh coal by ferric ion oxidation slows markedly as ferrous ions accumulate in solution, requiring maintenance of high redox potentials in processes designed for removal of pyrite and hazardous air pollutant (HAP) precursors by circulation of ferric solutions through coal. The pyrite oxidation rates obtained in these tests were used by Unifield Engineering to support the conceptual designs for alternative pyrite and HAP precursor bioleaching processes for the phase 2 pilot plant. Thermophilic microorganisms were tested to determine if mercury could be mobilized from coal under elevated growth temperatures. There was no evidence for mercury removal from coal under these conditions. However, the activity of the organisms may have liberated mercury physically. It is also possible that the organisms dissolved mercury and it readsorbed to the clay preferentially. Both of these possibilities are undergoing further testing. The Idaho National Engineering and Environmental Laboratory's (INEEL) slurry column reactor was operated and several batches of feed coal, product coal, waste solids and leach solutions were submitted to LBL for HAP precursor analysis. Results to date indicate significant removal of mercury, arsenic and other HAP precursors in the combined physical-biological process.

  15. Effect of surfactants on the morphology of FeSe films fabricated from ...

    Indian Academy of Sciences (India)

    tants in gas phase, aerosol- assisted chemical vapour deposition (AACVD) ... temperature, flow rate, concentration of the precursor, ... chemical sensing and photocatalytic activity in FeSe films ... having ultrasonic system on glass substrates.

  16. Use of organosilicate precursors for transparent coatings on organic substrates by plasma CVD

    International Nuclear Information System (INIS)

    Lasorsa, C; Versaci, R; Perillo, P

    2006-01-01

    This work discusses the production of transparent coatings of SiOxCy on substrates polycarbonated by PECVD at temperatures below 80 o C, with a gaseous mixture using different precursors with which, in similar processes produced the same results with respect to the coating obtained, with the same excellent quality and in accordance with international standards for optic coatings. Chlorinated precursors were excluded because they are highly corrosive as well as those with operating risks (toxic or explosive). The precursors used were tetraethyl orthosilicate (TEOS), tetramethylsilanete (TMS,) tetramethoxy silane (TMOS), hexamethyldisilizane (HMDS), and methyltrimethoxysilane (Z6070), with the contribution of O 2 and methane as reactive gases. Fourier transform infrared spectroscopy (FTIR) was used as well as X-ray generated photoelectron spectroscopy (XPS/ESCA). The functional groups were studied together with the film elements and its mechanical properties, transparency and refraction index. Irregardless of the precursor used, by properly modifying the process variables (pressure of the gaseous mixture, radio frequency power, relationship of processing gases and their flow), similar coatings can be chemically obtained, having the same morphology and, therefore, with identical adherence, structural and optic properties. None of the works consulted refer to the possibility of the indistinct use of different precursors for obtaining the same coating. These results are relevant when considering the difference in costs and their market availability. The influence of the addition of methane was studied in two processing variants, a) with oxygen and methane and b) with oxygen alone. For all the precursors used and with identical processing conditions, the carbon contributed by the addition of methane increased the concentration of carbon compounds, considerably reducing the presence of silanol, which being absorbent produces structural instability and cracking of the

  17. CVD of SiC and AlN using cyclic organometallic precursors

    Science.gov (United States)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  18. Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

    Science.gov (United States)

    Teeter, Glenn; Du, Hui; Young, Matthew

    2013-08-06

    A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

  19. A Robust Fiber Bragg Grating Hydrogen Gas Sensor Using Platinum-Supported Silica Catalyst Film

    OpenAIRE

    Marina Kurohiji; Seiji Ichiriyama; Naoki Yamasaku; Shinji Okazaki; Naoya Kasai; Yusuke Maru; Tadahito Mizutani

    2018-01-01

    A robust fiber Bragg grating (FBG) hydrogen gas sensor for reliable multipoint-leakage monitoring has been developed. The sensing mechanism is based on shifts of center wavelength of the reflection spectra due to temperature change caused by catalytic combustion heat. The sensitive film which consists of platinum-supported silica (Pt/SiO2) catalyst film was obtained using sol-gel method. The precursor solution was composed of hexachloroplatinic acid and commercially available silica precursor...

  20. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    OpenAIRE

    Wang Lan; Lin Xianzhong; Ennaoui Ahmed; Wolf Christian; Lux-Steiner Martha Ch.; Klenk Reiner

    2016-01-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating ...

  1. Laser damage in optical components: metrology, statistical and photo-induced analysis of precursor centres

    International Nuclear Information System (INIS)

    Gallais, L.

    2002-11-01

    This thesis deals with laser damage phenomena for nanosecond pulses, in optical components such as glasses, dielectric and metallic thin films. Firstly, a work is done on the laser damage metrology, in order to obtain accurate and reliable measurement of laser-induced damage probabilities, with a rigorous control of test parameters. Then, with the use of a specific model, we find densities of laser damage precursors in the case of bulk glasses (few tens by (100μm) 3 ) and in the case of glass surfaces (one precursor by μm 3 ). Our analysis is associated to morphology studies by Atomic Force Microscope to discuss about precursor nature and damage process. Influence of wavelength (from 355 to 1064 nm) and cumulated shots is also studied. Simulations are performed to study initiation mechanisms on these inclusions. This work gives an estimation of complex index and size of the precursor, which permits to discuss about possible detection by non-destructive tools. (author)

  2. Laser patterning of superconducting oxide films

    International Nuclear Information System (INIS)

    Gupta, A.; Hussey, B.W.; Koren, G.; Cooper, E.I.; Jagannathan, R.

    1988-01-01

    The focused output of an argon ion laser (514.5 nm) has been used for wiring superconducting lines of Y/sub 1/Ba/sub 2/CU/sub 3/O/sub 7-δ/ using films prepared from nitrate and trifluoroacetate solution precursors. A stoichiometric solution of the precursors is sprayed or spun on to the substrate to form a film. The film is patterned by irradiating in selected areas to convert the irradiated layers to an intermediate oxide or fluoride state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of the oxide or fluoride material. This patterned layer is converted to the superconducting 1-2-3 oxide in a subsequent annealing step. Maskless patterning of superconducting films has also been demonstrated by laser-assisted etching of the films in aqueous KOH solution. Although superconductivity is destroyed when the films are placed in solution, it can be restored after a brief anneal in oxygen

  3. MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor

    Energy Technology Data Exchange (ETDEWEB)

    Attolini, G. [IMEM-CNR, Parco Area delle Scienze, 37 A, 43124 Parma (Italy); Ponraj, J.S. [University of Information Science and Technology, St Paul the Apostle, Ohrid 6000 (Macedonia, The Former Yugoslav Republic of); Frigeri, C.; Buffagni, E.; Ferrari, C. [IMEM-CNR, Parco Area delle Scienze, 37 A, 43124 Parma (Italy); Musayeva, N.; Jabbarov, R. [Research and Development Center for Hi-Technologies, MCIT, Inshaatchilar ave., 2, AZ1073, Baku (Azerbaijan); Institute of Physics, ANAS, H. Javid ave., 33, AZ1143, Baku (Azerbaijan); Bosi, M., E-mail: bosi@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze, 37 A, 43124 Parma (Italy)

    2016-01-01

    Graphical abstract: - Highlights: • Germanium layer were deposited on silicon substrates. • A novel metal organic precursor (isobutyl germane) was used. • MOVPE growth process was optimized. • Layers were characterized by TEM, XRD; SEM and AFM. - Abstract: Being an attractive and demanding candidate in the field of energy conversion, germanium has attained widespread applications. The present work is aimed at the study of metal organic vapour phase epitaxy of germanium thin films on (0 0 1) silicon at different growth temperatures using isobutyl germane as a precursor. The epilayers were characterized by X-ray diffraction, high resolution transmission electron microscopy, atomic force microscopy and scanning electron microscopy in order to understand the structural and morphological properties. The films were found to be epitaxially grown and single crystalline with slight misorientation (below 0.1 degrees). The interface between the film and substrate was analyzed in depth and different temperature dependent growth behaviours were evidenced. The major relevant lattice imperfections observed were attributed to planar defects and threading dislocations.

  4. Sol-gel preparation of lead magnesium niobate (PMN) powders and thin films

    Science.gov (United States)

    Boyle, T.J.

    1999-01-12

    A method of preparing a lead magnesium niobium oxide (PMN), Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}, precursor solution by a solvent method wherein a liquid solution of a lead-complex PMN precursor is combined with a liquid solution of a niobium-complex PMN precursor, the combined lead- and niobium-complex liquid solutions are reacted with a magnesium-alkyl solution, forming a PMN precursor solution and a lead-based precipitate, and the precipitate is separated from the reacted liquid PMN precursor solution to form a precipitate-free PMN precursor solution. This precursor solution can be processed to form both ferroelectric powders and thin films. 3 figs.

  5. Understanding Animal Detection of Precursor Earthquake Sounds.

    Science.gov (United States)

    Garstang, Michael; Kelley, Michael C

    2017-08-31

    We use recent research to provide an explanation of how animals might detect earthquakes before they occur. While the intrinsic value of such warnings is immense, we show that the complexity of the process may result in inconsistent responses of animals to the possible precursor signal. Using the results of our research, we describe a logical but complex sequence of geophysical events triggered by precursor earthquake crustal movements that ultimately result in a sound signal detectable by animals. The sound heard by animals occurs only when metal or other surfaces (glass) respond to vibrations produced by electric currents induced by distortions of the earth's electric fields caused by the crustal movements. A combination of existing measurement systems combined with more careful monitoring of animal response could nevertheless be of value, particularly in remote locations.

  6. Metabolic Precursors to Amphetamine and Methamphetamine.

    Science.gov (United States)

    Cody, J D

    1993-12-01

    Analysis and interpretation of amphetamine results is a challenging process made difficult by a number of factors. One of the complications comes from determination of the origin of amphetamine or methamphetamine in a sample. Given the relatively rare occasions that either of these two drugs are prescribed, legal prescription of one of these drugs is seldom a reason for positive findings. A number of other precursor compounds are metabolized by the body to amphetamine or methamphetamine, many of which could be used for legitimate reasons. Fourteen different metabolic precursors of amphetamine or methamphetamine are included in this review. They are amphetaminil, benzphetamine, clobenzorex, deprenyl, dimethylamphetamine, ethylamphetamine, famprofazone, fencamine, fenethylline, fenproporex, furfenorex, mefenorex, mesocarb, and prenylamine. Medical use, metabolism, analysis, and interpretation are described to afford sufficient information to evaluate the possible involvement of these drugs in positive amphetamine or methamphetamine results. Copyright © 1993 Central Police University.

  7. Investigations on precursor measures for aeroelastic flutter

    Science.gov (United States)

    Venkatramani, J.; Sarkar, Sunetra; Gupta, Sayan

    2018-04-01

    Wind tunnel experiments carried out on a pitch-plunge aeroelastic system in the presence of fluctuating flows reveal that flutter instability is presaged by a regime of intermittency. It is observed that as the flow speed gradually increases towards the flutter speed, there appears intermittent bursts of periodic oscillations which become more frequent as the wind speed increases and eventually the dynamics transition into fully developed limit cycle oscillations, marking the onset of flutter. The signature from these intermittent oscillations are exploited to develop measures that forewarn a transition to flutter and can serve as precursors. This study investigates a suite of measures that are obtained directly from the time history of measurements and are hence model independent. The dependence of these precursors on the size of the measured data set and the time required for their computation is investigated. These measures can be useful in structural health monitoring of aeroelastic structures.

  8. Comparison exercise of probabilistic precursor analysis

    International Nuclear Information System (INIS)

    Fauchille, V.; Babst, S.

    2004-01-01

    From 2000 up to 2003, a comparison exercise concerning accident precursor programs was performed by IRSN, GRS, and NUPEC (Japan). The objective of this exercise was to compare the methodologies used to quantify conditional core damage probability related to incidents which can be considered as accident precursors. This exercise provided interesting results concerning the interpretation of such events. Generally, the participants identified similar scenarios of potential degradation. However, for several dominant sequences, differences in the results were noticed. The differences can be attributed to variations in the plant design, the strategy of management and in the methodological approach. For many reasons, comparison of human reliability analysis was difficult and perhaps another exercise in the future could provide more information about this subject. On the other hand, interesting outcomes have been obtained from the quantification of both common cause failures and potential common cause failures. (orig.)

  9. Functional Nanoporous Polymers from Block Copolymer Precursors

    DEFF Research Database (Denmark)

    Guo, Fengxiao

    Abstract Self-assembly of block copolymers provides well-defined morphologies with characteristic length scales in the nanometer range. Nanoporous polymers prepared by selective removal of one block from self-assembled block copolymers offer great technological promise due to their many potential...... functionalities remains a great challenge due to the limitation of available polymer synthesis and the nanoscale confinement of the porous cavities. The main topic of this thesis is to develop methods for fabrication of functional nanoporous polymers from block copolymer precursors. A method has been developed......, where living anionic polymerization and atom transfer radical polymerization (ATRP) are combined to synthesize a polydimethylsiloxane-b-poly(tert-butyl acrylate)-b-polystyrene (PDMS-b-PtBA-b-PS) triblock copolymer precursor. By using either anhydrous hydrogen fluoride or trifluoroacetic acid, PtBA block...

  10. Nonlinear magnetohydrodynamics of edge localized mode precursors

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Z. B., E-mail: guozhipku@gmail.com [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing (China); WCI Center for Fusion Theory, NFRI, Gwahangno 113, Yusung-gu, Daejeon 305-333 (Korea, Republic of); Wang, Lu [SEEE, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang, X. G. [State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing (China)

    2015-02-15

    A possible origin of edge-localized-mode (ELM) precursors based on nonlinear ideal peeling-ballooning mode is reported. Via nonlinear variational principle, a nonlinear evolution equation of the radial displacement is derived and solved, analytically. Besides an explosive growth in the initial nonlinear phase, it is found that the local displacement evolves into an oscillating state in the developed nonlinear phase. The nonlinear frequency of the ELM precursors scales as ω{sub pre}∼x{sup 1/3}ξ{sup ^}{sub ψ,in}{sup 2/3}n, with x position in radial direction, ξ{sup ^}{sub ψ,in} strength of initial perturbation, and n toroidal mode number.

  11. An alternative fluorine precursor for the synthesis of SnO2:F by spray pyrolysis

    International Nuclear Information System (INIS)

    Arca, E.; Fleischer, K.; Shvets, I.V.

    2012-01-01

    An alternative, non-toxic precursor was employed for the synthesis of SnO 2 :F transparent conducting oxide. The performance of benzenesulfonyl fluoride (BSF) as F source for spray pyrolysis was investigated. Its decomposition and the actual incorporation of fluorine in the tin oxide matrix were confirmed by X-ray photoelectron spectroscopy while its effect on the electrical properties was investigated by resistance and Hall measurements. Results were compared with respect to samples grown using a common fluorine source (NH 4 F), a commercial available sample and a sample grown by spray pyrolysis at an independent laboratory. We show that BSF leads to actively doped conductive SnO 2 with good carrier mobility, though the fluorine incorporation rate and hence overall conductivity of the films is lower than for fluorine precursors commonly used in spray pyrolysis.

  12. Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature

    Science.gov (United States)

    Jeong, Seong-Min; Kim, Kyung-Hun; Yoon, Young Joon; Lee, Myung-Hyun; Seo, Won-Seon

    2012-10-01

    Tetramethylsilane (TMS) is commonly used as a precursor in the production of SiC(β) films at relatively low temperatures. However, because TMS contains much more C than Si, it is difficult to produce solid phase SiC at high temperatures. In an attempt to develop a more efficient TMS-based SiC(α) process, computational thermodynamic simulations were performed under various temperatures, working pressures and TMS/H2 ratios. The findings indicate that each solid phase has a different dependency on the H2 concentration. Consequently, a high H2 concentration results in the formation of a single, solid phase SiC region at high temperatures. Finally, TMS appears to be useful as a precursor for the high temperature production of SiC(α).

  13. Film processing

    International Nuclear Information System (INIS)

    Abdul Nassir Ibrahim; Azali Muhammad; Ab. Razak Hamzah; Abd. Aziz Mohamed; Mohamad Pauzi Ismail

    2008-01-01

    The processing was made not only to show what are in the film but also to produce radiograph with high quality where the information gathered really presented level of the quality of the object inspected. Besides that, good procedure will make the film with good quality can keep the film in long time for reference. Here, more detailed on how the dark room functioned and its design. So, the good procedure while processed the film will be discussed detailed in this chapter from entering the dark room to exit from there.

  14. Demens Film

    DEFF Research Database (Denmark)

    Jensen, Anders Møller

    2012-01-01

    Vi vil skabe film til mennesker med demens – ikke film om demens sygdommen eller beretninger om livet og hverdagen med en kronisk lidelse. Filmene skal medvirke til at frembringe en behagelig stemning omkring og hos mennesker med demens, så hverdagen bliver så tryg som mulig. Filmene skal samtidig...... var at afgrænse og prioritere projektet, samt komme med anbefalinger omkring hvad der er vigtigt, i forbindelse med produktion af film målrettet mennesker med demens. Resultat af ekspertgruppen sammenfattes i denne rapport. Projektet gennemføres som et samarbejde mellem Retrospect Film...

  15. PRECURSORS OF EARTHQUAKES: VLF SIGNALSIONOSPHERE IONOSPHERE RELATION

    Directory of Open Access Journals (Sweden)

    Mustafa ULAS

    2013-01-01

    Full Text Available lot of people have died because of earthquakes every year. Therefore It is crucial to predict the time of the earthquakes reasonable time before it had happed. This paper presents recent information published in the literature about precursors of earthquakes. The relationships between earthquakes and ionosphere are targeted to guide new researches in order to study further to find novel prediction methods.

  16. Lunar Robotic Precursor Missions Using Electric Propulsion

    OpenAIRE

    Winski, Richard G.

    2006-01-01

    A trade study is carried out for the design of electric propulsion based lunar robotic precursor missions. The focus is to understand the relationships between payload mass delivered, electric propulsion power, and trip time. The results are compared against a baseline system using chemical propulsion with LOX/H2. The major differences between the chemical propulsion based and electric propulsion based systems are presented in terms of the payload mass and trip time. It is shown that solar e...

  17. Ionospheric precursors for crustal earthquakes in Italy

    Directory of Open Access Journals (Sweden)

    L. Perrone

    2010-04-01

    Full Text Available Crustal earthquakes with magnitude 6.0>M≥5.5 observed in Italy for the period 1979–2009 including the last one at L'Aquila on 6 April 2009 were considered to check if the earlier obtained relationships for ionospheric precursors for strong Japanese earthquakes are valid for the Italian moderate earthquakes. The ionospheric precursors are based on the observed variations of the sporadic E-layer parameters (h'Es, fbEs and foF2 at the ionospheric station Rome. Empirical dependencies for the seismo-ionospheric disturbances relating the earthquake magnitude and the epicenter distance are obtained and they have been shown to be similar to those obtained earlier for Japanese earthquakes. The dependences indicate the process of spreading the disturbance from the epicenter towards periphery during the earthquake preparation process. Large lead times for the precursor occurrence (up to 34 days for M=5.8–5.9 tells about a prolong preparation period. A possibility of using the obtained relationships for the earthquakes prediction is discussed.

  18. Cellular Kinetics of Perivascular MSC Precursors

    Directory of Open Access Journals (Sweden)

    William C. W. Chen

    2013-01-01

    Full Text Available Mesenchymal stem/stromal cells (MSCs and MSC-like multipotent stem/progenitor cells have been widely investigated for regenerative medicine and deemed promising in clinical applications. In order to further improve MSC-based stem cell therapeutics, it is important to understand the cellular kinetics and functional roles of MSCs in the dynamic regenerative processes. However, due to the heterogeneous nature of typical MSC cultures, their native identity and anatomical localization in the body have remained unclear, making it difficult to decipher the existence of distinct cell subsets within the MSC entity. Recent studies have shown that several blood-vessel-derived precursor cell populations, purified by flow cytometry from multiple human organs, give rise to bona fide MSCs, suggesting that the vasculature serves as a systemic reservoir of MSC-like stem/progenitor cells. Using individually purified MSC-like precursor cell subsets, we and other researchers have been able to investigate the differential phenotypes and regenerative capacities of these contributing cellular constituents in the MSC pool. In this review, we will discuss the identification and characterization of perivascular MSC precursors, including pericytes and adventitial cells, and focus on their cellular kinetics: cell adhesion, migration, engraftment, homing, and intercellular cross-talk during tissue repair and regeneration.

  19. Characterization of the microporous HDPE film with a stearyl alcohol and its physical properties

    International Nuclear Information System (INIS)

    Park, Jong Seok; Sung, Hae Jun; Gwon, Hui Jeong; Lim, Youn Mook; Nho, Young Chang

    2009-01-01

    The addition effects of the stearyl alcohol (STE) on the properties of the microporous high density polyethylene (HDPE) films were investigated. STE and dibuthyl phthalate (DBP) were premixed as a codiluent. The HDPE and the codiluent were mixed to obtain the precursor film in the twin extruder. The precursor films were uni-axially stretched up to 600% in a bath 80 .deg. C and then the stretched HDPE films were irradiated by gamma rays. The pore volume and pore size on the microporous HDPE films were increased with an increasing content of STE. The mechanical characteristics of the microporous HDPE films were increased with an irradiation dose up to 50 kGy. Also, the thermal shrinkage behavior of the microporous HDPE films was decreased with an increasing radiation dose up to 50 kGy

  20. Deposition and consolidation of porous ceramic films for membrane separation

    DEFF Research Database (Denmark)

    Elmøe, Tobias Dokkedal; Tricoli, Antonio; Johannessen, Tue

    The deposition of porous ceramic films for membrane separation can be done by several processes such as thermophoresis [1], dip-coating [2] and spray pyrolysis [3]. Here we present a high-speed method, in which ceramic nano-particles form a porous film by filtration on top of a porous ceramic...... substrate [4]. Ceramic nano-particles are generated in a flame, using either a premixed (gas) flame, in which a metal-oxide precursor is evaporated in an N2 stream, which is combusted with methane and air, or using a flame spray pyrolysis, in which a liquid metal-oxide precursor is sprayed through a nozzle...

  1. Monocrystalline zinc oxide films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

    2010-01-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  2. Solvent-Assisted Gel Printing for Micropatterning Thin Organic-Inorganic Hybrid Perovskite Films.

    Science.gov (United States)

    Jeong, Beomjin; Hwang, Ihn; Cho, Sung Hwan; Kim, Eui Hyuk; Cha, Soonyoung; Lee, Jinseong; Kang, Han Sol; Cho, Suk Man; Choi, Hyunyong; Park, Cheolmin

    2016-09-27

    While tremendous efforts have been made for developing thin perovskite films suitable for a variety of potential photoelectric applications such as solar cells, field-effect transistors, and photodetectors, only a few works focus on the micropatterning of a perovskite film which is one of the most critical issues for large area and uniform microarrays of perovskite-based devices. Here we demonstrate a simple but robust method of micropatterning a thin perovskite film with controlled crystalline structure which guarantees to preserve its intrinsic photoelectric properties. A variety of micropatterns of a perovskite film are fabricated by either microimprinting or transfer-printing a thin spin-coated precursor film in soft-gel state with a topographically prepatterned elastomeric poly(dimethylsiloxane) (PDMS) mold, followed by thermal treatment for complete conversion of the precursor film to a perovskite one. The key materials development of our solvent-assisted gel printing is to prepare a thin precursor film with a high-boiling temperature solvent, dimethyl sulfoxide. The residual solvent in the precursor gel film makes the film moldable upon microprinting with a patterned PDMS mold, leading to various perovskite micropatterns in resolution of a few micrometers over a large area. Our nondestructive micropatterning process does not harm the intrinsic photoelectric properties of a perovskite film, which allows for realizing arrays of parallel-type photodetectors containing micropatterns of a perovskite film with reliable photoconduction performance. The facile transfer of a micropatterned soft-gel precursor film on other substrates including mechanically flexible plastics can further broaden its applications to flexible photoelectric systems.

  3. Preparation of molybdenum oxide thin films by MOCVD

    International Nuclear Information System (INIS)

    Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

    2007-01-01

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

  4. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  5. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  6. Into films

    DEFF Research Database (Denmark)

    Tan, Ed S.; Doicaru, Miruna M.; Hakemulder, Frank

    2017-01-01

    Most film viewers know the experience of being deeply absorbed in the story of a popular film. It seems that at such moments they lose awareness of watching a movie. And yet it is highly unlikely that they completely ignore the fact that they watch a narrative and technological construction. Perh...

  7. Kinetic roughening and pinning of coupled precursor and impregnation fronts in porous media

    International Nuclear Information System (INIS)

    Balankin, Alexander S.; Garcia Paredes, Rafael; Marquez Gonsalez, Jesus; Susarrey Huerta, Orlando; Morales Matamoros, Daniel; Castrejon Vacio, Fernando

    2006-01-01

    In the paper wetting experiments at low evaporation rate, after a short Washburn regime the film flow of filtered water overtakes the main impregnation front. Accordingly, we study the kinetic roughening dynamics and pinning of two strongly coupled fronts moving in different papers. We find that the kinetic roughening dynamics of precursor and main fronts belongs to different universality classes, nevertheless, at the final stage the distance between the fronts decrease until both fronts are pinned in the same configuration z P (x,y), the scaling properties of which are determined by the long-range correlations in the pore network

  8. Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

    International Nuclear Information System (INIS)

    Alevli, Mustafa; Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi

    2016-01-01

    GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor

  9. Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Alevli, Mustafa, E-mail: mustafaalevli@marmara.edu.tr [Department of Physics, Marmara University, Göztepe Kadıköy, 34722 İstanbul (Turkey); Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr [Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, 06800 Ankara, Turkey and National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, 06800 Ankara (Turkey)

    2016-01-15

    GaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor.

  10. CVD synthesis of HTSC films using volatile coordination compounds

    International Nuclear Information System (INIS)

    Volkov, S.V.; Zub, V.Y.; Balakshina, O.N.; Mazurenko, E.A.

    1995-01-01

    Thin HTSC films of YBa 2 Cu 3 O 7-x with high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium acetylacetonate with α,α'- dipyridyl as precursors. In-situ films were deposited in N 2 and O 2 gas reactant mixture at reduced substrate temperatures. HTSC films prepared on SrTiO 3 , ZrO 2 (Y) and MgO substrates have rather high electric characteristics (e.g. j c ∼10 4 - 10 5 A/cm 2 ). The problem of β-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of superconductive films was discussed. (orig.)

  11. Pentacene Active Channel Layers Prepared by Spin-Coating and Vacuum Evaporation Using Soluble Precursors for OFET Applications

    OpenAIRE

    Ochiai, Shizuyasu; Palanisamy, Kumar; Kannappan, Santhakumar; Shin, Paik-Kyun

    2012-01-01

    Pentacene OFETs of bottom-gate/bottom-contact were fabricated with three types of pentacene organic semiconductors and cross linked Poly(4-vinylphenol) or polycarbonate as gate dielectric layer. Two different processes were used to prepare the pentacene active channel layers: (1) spin-coating on dielectric layer using two different soluble pentacene precursors of SAP and DMP; (2) vacuum evaporation on PC insulator. X-ray diffraction studies revealed coexistence of thin film and bulk phase of ...

  12. Meat flavor precursors and factors influencing flavor precursors--A systematic review.

    Science.gov (United States)

    Khan, Muhammad Issa; Jo, Cheorun; Tariq, Muhammad Rizwan

    2015-12-01

    Flavor is the sensory impression sensed by taste and smell buds and is a leading factor determining the meat quality and purchasing decision of the consumer. Meat flavor is characteristic of volatiles produced as a result of reactions of non-volatile components that are induced thermally. The water soluble compounds having low molecular weight and meat lipids are important precursors of cooked meat flavor. The Maillard reaction, lipid oxidation, and vitamin degradation are leading reactions during cooking which develop meat flavor from uncooked meat with little aroma and bloody taste. The pre-slaughter and postmortem factors like animal breed, sex, age, feed, aging and cooking conditions contribute to flavor development of cooked meat. The objective of this review is to highlight the flavor chemistry, meat flavor precursors and factors affecting meat flavor precursors. Copyright © 2015 Elsevier Ltd. All rights reserved.

  13. Engineering Graphene Films from Coal

    Science.gov (United States)

    Vijapur, Santosh H.

    Graphene is a unique material with remarkable properties suitable for a wide array of applications. Chemical vapor deposition (CVD) is a simple technique for synthesis of large area and high quality graphene films on various metal substrates. Among the metal substrates, copper has been shown to be an excellent support for the growth of graphene films. Traditionally, hydrocarbon gases are used for the graphene synthesis via CVD. Unconventional solid carbon sources such as various polymers and food waste have also shown great potential for synthesis of graphene films. Coal is one such carbon enriched and abundantly available unconventional source. Utilization of coal as a carbon source to synthesize large area, transparent, and high quality few-layer graphene films via CVD has been demonstrated in the present work. Hydrocarbon gases are released as products of coal pyrolysis at temperatures ≥400 °C. This study hypothesized that, these hydrocarbon gases act as precursors for the synthesis of graphene films on the copper substrate. Hence, atmospheric pressure CVD and low temperature of 400 °C were utilized initially for the production of graphene films. These conditions were suitable for the formation of amorphous carbon (a-C) films but not crystalline graphene films that were the objective of this work. The synthesized a-C films on the copper substrate were shown to be uniform and transparent with large surface area. The thickness and surface roughness of the a-C films were determined to have typical values of 5 nm and 0.55 nm, respectively. The a-C film has >95 % optical transmittance and sheet resistivity of 0.6 MO sq-1. These values are comparable to other carbon thin films synthesized at higher temperatures. Further, the a-C films were transferred onto any type of substrate such as silicon wafer and titanium foil, and can be utilized for diverse applications. However, crystalline graphene films were not produced by implementing atmospheric pressure CVD and low

  14. The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,GaSe2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors

    Directory of Open Access Journals (Sweden)

    Chia-Ho Huang

    2014-01-01

    Full Text Available CIGS films are prepared by single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor. The annealing processes were performed using various Ar pressures, heating rates, and soaking times. A higher Ar pressure is needed to fabricate highly crystalline CIGS films, as no extra Se-vapor source is supplied. As the heating rate increases, the surface morphologies of the CIGS films become looser and some cracks are observed. However, the influence of soaking time is insignificant and the selenization process only requires a short time when the precursors are selenized at a higher temperature with a lower heating rate and a higher Ar pressure. In this study, a dense chalcopyrite CIGS film with a thickness of about 1.5-1.6 μm, with large grains (~1.2 μm and no cracking or peeling is obtained after selenizing at a temperature of 550°C, an Ar pressure of 300 Torr, a heating rate of 60°C/min, and a soaking time of 20 min. By adequate design of the stacked precursor and controlling the annealing parameters, single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor is simplified for the fabrication of a fully crystallized chalcopyrite CIGS absorber layers with good crystallization and large grains.

  15. Non radioactive precursor import into chloroplasts

    International Nuclear Information System (INIS)

    Lombardo, V.A.; Ottado, J.

    2003-01-01

    Full text: Eukaryotic cells have a subcellular organization based on organelles. Protein transport to these organelles is quantitatively important because the majority of cellular proteins are codified in nuclear genes and then delivered to their final destination. Most of the chloroplast proteins are translated on cytoplasmic ribosomes as larger precursors with an amino terminal transit peptide that is necessary and sufficient to direct the precursor to the chloroplast. Once inside the organelle the transit peptide is cleaved and the mature protein adopts its folded form. In this work we developed a system for the expression and purification of the pea ferredoxin-NADP + reductase precursor (preFNR) for its import into chloroplasts in non radioactive conditions. We constructed a preFNR fused in its carboxy terminus to a 6 histidines peptide (preFNR-6xHis) that allows its identification using a commercial specific antibody. The construction was expressed, purified, processed and precipitated, rendering a soluble and active preFNR-6xHis that was used in binding and import into chloroplasts experiments. The reisolated chloroplasts were analyzed by SDS-PAGE, electro-blotting and revealed by immuno-detection using either colorimetric or chemiluminescent reactive. We performed also import experiments labeling preFNR and preFNR-6xHis with radioactive methionine as controls. We conclude that preFNR-6xHis is bound and imported into chloroplasts as the wild type preFNR and that both colorimetric or chemiluminescent detection methods are useful to avoid the manipulation of radioactive material. (author)

  16. NOx emissions trading: Precursor to future growth

    International Nuclear Information System (INIS)

    Colella, A.

    1993-01-01

    Title I of the Clean Air Act Amendments (CAAA) of 1990 specified the framework for enhanced regulation in ozone non-attainment areas with increasingly stringent requirements dependent on the area classification - marginal, moderate, serious, severe or extreme. Before the CAAA were passed, only volatile organic compounds (VOCs) were regulated as precursors to ozone formation, Now, by statute, emissions of nitrogen oxides (NO x ) are also regulated as ozone precursor. Under the CAAA, new sources and modifications of existing sources are subject to Title I permitting requirements in ozone non-attainment areas if emissions of NO x and/or VOCs exceed certain triggering levels. For many new or facility expansion projects, especially power generation, the NO x thresholds are easily exceeded thus triggering Title I non-attainment new source review which requires application of control technology to new equipment which results in the Lowest Achievable Emission Rate (LAER), and securing emission reductions either internally or from other major sources to offset the increased emission from the new or modified source. The selection of a LAER technology is generally within an applicant's control. An applicant can determine up-front the engineering and cost considerations associated with LAER technology is assessing a project's viability. However, without a clear source of emission offsets of a means to secure them, assessing project viability could be difficult if not impossible. No available emission offsets means no industrial growth. For sources of NO x undergoing Title I new source review, a regional or state banking system that facilitates NO x emissions trading is needed as a precursor to future growth. This paper presents an overview of EPA's Emissions Trading Policy and Title I new source review offset provisions. Industry's concerns about emissions trading and recommendations for future trading programs are presented

  17. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  18. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    International Nuclear Information System (INIS)

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  19. Amorphous Alloy: Promising Precursor to Form Nanoflowerpot

    Directory of Open Access Journals (Sweden)

    Guo Lan

    2014-01-01

    Full Text Available Nanoporous copper is fabricated by dealloying the amorphous Ti2Cu alloy in 0.03 M HF electrolyte. The pore and ligament sizes of the nanoporous copper can be readily tailored by controlling the dealloying time. The as-prepared nanoporous copper provides fine and uniform nanoflowerpots to grow highly dispersed Au nanoflowers. The blooming Au nanoflowers in the nanoporous copper flowerpots exhibit both high catalytic activity and stability towards the oxidation of glucose, indicating that the amorphous alloys are ideal precursors to form nanoflowerpot which can grow functional nanoflowers.

  20. Iron filled carbon nanostructures from different precursors

    International Nuclear Information System (INIS)

    Costa, S.; Borowiak-Palen, E.; Bachmatiuk, A.; Ruemmeli, M.H.; Gemming, T.; Kalenczuk, R.J.

    2008-01-01

    Here, we present a study on the synthesis of different nanostructures with one single-step in situ filling (encapsulation) via carbon vapor deposition (CVD). Ferrocene, acetylferrocene and iron (II) nitrate as iron precursors were explored. The application of each of these compounds resulted in different carbon nanomaterials such as: iron filled multiwalled carbon nanotubes with a low filling ratio (Fe-MWCNT), iron filled nanocapsules and unfilled MWCNT. The as-produced samples were purified by high temperature annealing and acid treatment. The purified materials were characterised using transmission electron microscopy (TEM) and Raman spectroscopy

  1. Texture variations in sol-gel derived PZT films on substrates with platinum metallization

    NARCIS (Netherlands)

    Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt; Cobianu, C.

    1994-01-01

    Metalorganic precursor solutions of composition Zr : Ti = 0.53 : 0.47 were used to spin-cast PZT layers on sputtered Pt films. After annealing at temperatures of 550 °C - 800 °C, the PZT films of tetragonal perovskite structure reproducibly showed different textures and surface morphologies,

  2. Novel precursors for the deposition of rare earth oxides

    International Nuclear Information System (INIS)

    Ahlers, Mareike

    2010-01-01

    During this work rare earth solvates with nitrate and perchlorate anions have been investigated. All compounds have been structurally characterized and analyzed using thermal gravimetric analysis. The decomposition residues were analyzed using powder diffraction methods. Almost all compounds showed a characteristically intense exothermic decomposition step during the thermal decomposition, most likely caused by an intramolecular redox reaction between the nitrate or perchlorate anion respectively and the organic solvent molecules. The nitrates RE(NO 3 ) 3 (CH(OCH 3 ) 3 ) 2 (RE = Sm, Eu) were isolated and characterized for the first time as the intermediate of the dehydration reaction with trimethyl orthoformate. The known compound group of dimethoxyethane solvates was then expanded with RE(NO 3 ) 3 (O 2 C 4 H 10 ) (RE = La, Sm, Eu). Considering the possible use as precursor material the already described neodymium compound is also discussed. The thermal decomposition of these compounds yields the respective cubic rare earth oxide and shows the typical intense exothermic decomposition reaction. A variety of different precursor system based on nitrate solvates for the deposition of rare earth oxide layers on a silicon surface was developed and investigated in collaboration with the group of Prof. Dr. Al-Shamery (Univ. Oldenburg). Ultra thin films on a H-Si(111) surface were obtained via the deposition of the precursor, which was dissolved in organic solvents. An oxide layer was detected after the heating of the sample. The film thickness was measured as < 10 nm, whereas the thickness of the film was controlled by the concentration of the precursor solution. Sm(ClO 4 ) 3 (CH(OCH 3 ) 3 ) 3 was isolated and characterized for the first time as the intermediate of the dehydration reaction with trimethyl orthoformate. Eu(ClO 4 ) 3 (CH(OCH 3 ) 3 ) 2 (MeOH) 2 was obtained without recrystallization. The methanol molecules, formed during the hydrolysis of the trimethyl

  3. Demens Film

    DEFF Research Database (Denmark)

    Ridder, Hanne Mette Ochsner

    2012-01-01

    I forbindelse med opstarten af Demens Film projektet har der været nedsat en ekspertgruppe, som er kommet med en række anbefalinger omkring film til mennesker med demens. Anbefalingerne skal bruges i de næste faser af projektet. Deltagerne i ekspertgruppen var sammensat af en bred gruppe...... fagpersoner inde for forskellige fagområder. Læs mere om gruppens anbefalinger og sammensætning af ekspertgruppen i den kort rapport som er offentlig tilgængelig. Læs Ekspertgruppe anbefalingerne til Demens Film projekt....

  4. Flash light sintered copper precursor/nanoparticle pattern with high electrical conductivity and low porosity for printed electronics

    International Nuclear Information System (INIS)

    Chung, Wan-Ho; Hwang, Hyun-Jun; Kim, Hak-Sung

    2015-01-01

    In this work, the hybrid copper inks with precursor and nanoparticles were fabricated and sintered via flash light irradiation to achieve highly conductive electrode pattern with low porosity. The hybrid copper ink was made of copper nanoparticles and various copper precursors (e.g., copper(II) chloride, copper(II) nitrate trihydrate, copper(II) sulfate pentahydrate and copper(II) trifluoroacetylacetonate). The printed hybrid copper inks were sintered at room temperature and under ambient conditions using an in-house flash light sintering system. The effects of copper precursor weight fraction and the flash light irradiation conditions (light energy and pulse duration) were investigated. Surfaces of the sintered hybrid copper patterns were analyzed using a scanning electron microscope. Also, spectroscopic characterization techniques such as Fourier transform infrared spectroscopy and X-ray diffraction were used to investigate the crystal phases of the flash light sintered copper precursors. High conductivity hybrid copper patterns (27.3 μΩ cm), which is comparable to the resistivity of bulk copper (1.68 μΩ cm) were obtained through flash light sintering at room temperature and under ambient conditions. - Highlights: • The hybrid copper inks with precursor and nanoparticles were fabricated. • The hybrid copper ink was sintered via flash light irradiation. • The resistivity of sintered hybrid copper ink was 27.3 μΩ cm. • Highly conductive copper film with low porosity could be achieved

  5. Flash light sintered copper precursor/nanoparticle pattern with high electrical conductivity and low porosity for printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Wan-Ho; Hwang, Hyun-Jun [Department of Mechanical Convergence Engineering, Hanyang University, 17 Haendang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Kim, Hak-Sung, E-mail: kima@hanyang.ac.kr [Department of Mechanical Convergence Engineering, Hanyang University, 17 Haendang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-04-01

    In this work, the hybrid copper inks with precursor and nanoparticles were fabricated and sintered via flash light irradiation to achieve highly conductive electrode pattern with low porosity. The hybrid copper ink was made of copper nanoparticles and various copper precursors (e.g., copper(II) chloride, copper(II) nitrate trihydrate, copper(II) sulfate pentahydrate and copper(II) trifluoroacetylacetonate). The printed hybrid copper inks were sintered at room temperature and under ambient conditions using an in-house flash light sintering system. The effects of copper precursor weight fraction and the flash light irradiation conditions (light energy and pulse duration) were investigated. Surfaces of the sintered hybrid copper patterns were analyzed using a scanning electron microscope. Also, spectroscopic characterization techniques such as Fourier transform infrared spectroscopy and X-ray diffraction were used to investigate the crystal phases of the flash light sintered copper precursors. High conductivity hybrid copper patterns (27.3 μΩ cm), which is comparable to the resistivity of bulk copper (1.68 μΩ cm) were obtained through flash light sintering at room temperature and under ambient conditions. - Highlights: • The hybrid copper inks with precursor and nanoparticles were fabricated. • The hybrid copper ink was sintered via flash light irradiation. • The resistivity of sintered hybrid copper ink was 27.3 μΩ cm. • Highly conductive copper film with low porosity could be achieved.

  6. Fluorinated Phenylalanine Precursor Resistance in Yeast

    Directory of Open Access Journals (Sweden)

    Ian S. Murdoch

    2018-06-01

    Full Text Available Development of a counter-selection method for phenylalanine auxotrophy could be a useful tool in the repertoire of yeast genetics. Fluorinated and sulfurated precursors of phenylalanine were tested for toxicity in Saccharomyces cerevisiae. One such precursor, 4-fluorophenylpyruvate (FPP, was found to be toxic to several strains from the Saccharomyces and Candida genera. Toxicity was partially dependent on ARO8 and ARO9, and correlated with a strain’s ability to convert FPP into 4-fluorophenylalanine (FPA. Thus, strains with deletions in ARO8 and ARO9, having a mild phenylalanine auxotrophy, could be separated from a culture of wild-type strains using FPP. Tetrad analysis suggests FPP resistance in one strain is due to two genes. Strains resistant to FPA have previously been shown to exhibit increased phenylethanol production. However, FPP resistant isolates did not follow this trend. These results suggest that FPP could effectively be used for counter-selection but not for enhanced phenylethanol production.

  7. Polymer films

    Science.gov (United States)

    Granick, Steve; Sukhishvili, Svetlana A.

    2004-05-25

    A film contains a first polymer having a plurality of hydrogen bond donating moieties, and a second polymer having a plurality of hydrogen bond accepting moieties. The second polymer is hydrogen bonded to the first polymer.

  8. Structural, electrical, and optical properties of polycrystalline NbO_2 thin films grown on glass substrates by solid phase crystallization

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Kamisaka, Hideyuki; Hirose, Yasushi; Hasegawa, Tetsuya

    2017-01-01

    We investigated the structural, electrical, and optical properties of polycrystalline NbO_2 thin films on glass substrates. The NbO_2 films were crystallized from amorphous precursor films grown by pulsed laser deposition at various oxygen partial pressures (P_O_2). The electrical and optical properties of the precursor films systematically changed with P_O_2, demonstrating that the oxygen content of the precursor films can be finely controlled with P_O_2. The precursors were crystallized into polycrystalline NbO_2 films by annealing under vacuum at 600 C. The NbO_2 films possessed extremely flat surfaces with branching patterns. Even optimized films showed a low resistivity (ρ) of 2 x 10"2 Ω cm, which is much lower than the bulk value of 1 x 10"4 Ω cm, probably because of the inferior crystallinity of the films compared with that of a bulk NbO_2 crystal. Both oxygen-rich and -poor NbO_2 films showed lower ρ than that of the stoichiometric film. The NbO_2 film with the highest ρ showed an indirect bandgap of 0.7 eV. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Structural, electrical, and optical properties of polycrystalline NbO{sub 2} thin films grown on glass substrates by solid phase crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), Kawasaki (Japan); Kamisaka, Hideyuki [Department of Chemistry, The University of Tokyo (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), Kawasaki (Japan); Department of Chemistry, The University of Tokyo (Japan)

    2017-03-15

    We investigated the structural, electrical, and optical properties of polycrystalline NbO{sub 2} thin films on glass substrates. The NbO{sub 2} films were crystallized from amorphous precursor films grown by pulsed laser deposition at various oxygen partial pressures (P{sub O2}). The electrical and optical properties of the precursor films systematically changed with P{sub O2}, demonstrating that the oxygen content of the precursor films can be finely controlled with P{sub O2}. The precursors were crystallized into polycrystalline NbO{sub 2} films by annealing under vacuum at 600 C. The NbO{sub 2} films possessed extremely flat surfaces with branching patterns. Even optimized films showed a low resistivity (ρ) of 2 x 10{sup 2} Ω cm, which is much lower than the bulk value of 1 x 10{sup 4} Ω cm, probably because of the inferior crystallinity of the films compared with that of a bulk NbO{sub 2} crystal. Both oxygen-rich and -poor NbO{sub 2} films showed lower ρ than that of the stoichiometric film. The NbO{sub 2} film with the highest ρ showed an indirect bandgap of 0.7 eV. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Precursor Mediated Synthesis of Nanostructured Silicas: From Precursor-Surfactant Ion Pairs to Structured Materials.

    Science.gov (United States)

    Hesemann, Peter; Nguyen, Thy Phung; Hankari, Samir El

    2014-04-11

    The synthesis of nanostructured anionic-surfactant-templated mesoporous silica (AMS) recently appeared as a new strategy for the formation of nanostructured silica based materials. This method is based on the use of anionic surfactants together with a co-structure-directing agent (CSDA), mostly a silylated ammonium precursor. The presence of this CSDA is necessary in order to create ionic interactions between template and silica forming phases and to ensure sufficient affinity between the two phases. This synthetic strategy was for the first time applied in view of the synthesis of surface functionalized silica bearing ammonium groups and was then extended on the formation of materials functionalized with anionic carboxylate and bifunctional amine-carboxylate groups. In the field of silica hybrid materials, the "anionic templating" strategy has recently been applied for the synthesis of silica hybrid materials from cationic precursors. Starting from di- or oligosilylated imidazolium and ammonium precursors, only template directed hydrolysis-polycondensation reactions involving complementary anionic surfactants allowed accessing structured ionosilica hybrid materials. The mechanistic particularity of this approach resides in the formation of precursor-surfactant ion pairs in the hydrolysis-polycondensation mixture. This review gives a systematic overview over the various types of materials accessed from this cooperative ionic templating approach and highlights the high potential of this original strategy for the formation of nanostructured silica based materials which appears as a complementary strategy to conventional soft templating approaches.

  11. Precursor Mediated Synthesis of Nanostructured Silicas: From Precursor-Surfactant Ion Pairs to Structured Materials

    Directory of Open Access Journals (Sweden)

    Peter Hesemann

    2014-04-01

    Full Text Available The synthesis of nanostructured anionic-surfactant-templated mesoporous silica (AMS recently appeared as a new strategy for the formation of nanostructured silica based materials. This method is based on the use of anionic surfactants together with a co-structure-directing agent (CSDA, mostly a silylated ammonium precursor. The presence of this CSDA is necessary in order to create ionic interactions between template and silica forming phases and to ensure sufficient affinity between the two phases. This synthetic strategy was for the first time applied in view of the synthesis of surface functionalized silica bearing ammonium groups and was then extended on the formation of materials functionalized with anionic carboxylate and bifunctional amine-carboxylate groups. In the field of silica hybrid materials, the “anionic templating” strategy has recently been applied for the synthesis of silica hybrid materials from cationic precursors. Starting from di- or oligosilylated imidazolium and ammonium precursors, only template directed hydrolysis-polycondensation reactions involving complementary anionic surfactants allowed accessing structured ionosilica hybrid materials. The mechanistic particularity of this approach resides in the formation of precursor-surfactant ion pairs in the hydrolysis-polycondensation mixture. This review gives a systematic overview over the various types of materials accessed from this cooperative ionic templating approach and highlights the high potential of this original strategy for the formation of nanostructured silica based materials which appears as a complementary strategy to conventional soft templating approaches.

  12. Novel precursors for the deposition of rare earth oxides; Neuartige Precursor zur Abscheidung von Selten-Erd-Oxiden

    Energy Technology Data Exchange (ETDEWEB)

    Ahlers, Mareike

    2010-02-22

    During this work rare earth solvates with nitrate and perchlorate anions have been investigated. All compounds have been structurally characterized and analyzed using thermal gravimetric analysis. The decomposition residues were analyzed using powder diffraction methods. Almost all compounds showed a characteristically intense exothermic decomposition step during the thermal decomposition, most likely caused by an intramolecular redox reaction between the nitrate or perchlorate anion respectively and the organic solvent molecules. The nitrates RE(NO{sub 3}){sub 3}(CH(OCH{sub 3}){sub 3}){sub 2} (RE = Sm, Eu) were isolated and characterized for the first time as the intermediate of the dehydration reaction with trimethyl orthoformate. The known compound group of dimethoxyethane solvates was then expanded with RE(NO{sub 3}){sub 3}(O{sub 2}C{sub 4}H{sub 10}) (RE = La, Sm, Eu). Considering the possible use as precursor material the already described neodymium compound is also discussed. The thermal decomposition of these compounds yields the respective cubic rare earth oxide and shows the typical intense exothermic decomposition reaction. A variety of different precursor system based on nitrate solvates for the deposition of rare earth oxide layers on a silicon surface was developed and investigated in collaboration with the group of Prof. Dr. Al-Shamery (Univ. Oldenburg). Ultra thin films on a H-Si(111) surface were obtained via the deposition of the precursor, which was dissolved in organic solvents. An oxide layer was detected after the heating of the sample. The film thickness was measured as < 10 nm, whereas the thickness of the film was controlled by the concentration of the precursor solution. Sm(ClO{sub 4}){sub 3}(CH(OCH{sub 3}){sub 3}){sub 3} was isolated and characterized for the first time as the intermediate of the dehydration reaction with trimethyl orthoformate. Eu(ClO{sub 4}){sub 3}(CH(OCH{sub 3}){sub 3}){sub 2}(MeOH){sub 2} was obtained without

  13. An in-situ chemical reaction deposition of nanosized wurtzite CdS thin films

    International Nuclear Information System (INIS)

    Chu Juan; Jin Zhengguo; Cai Shu; Yang Jingxia; Hong Zhanglian

    2012-01-01

    Nanocrystalline CdS thin films were deposited on glass substrates by an ammonia-free in-situ chemical reaction synthesis technique using cadmium cationic precursor solid films as reaction source and sodium sulfide based solutions as anionic reaction medium. Effects of ethanolamine addition to the cadmium cationic precursor solid films, deposition cycle numbers and annealing treatments in Ar atmosphere on structure, morphology, chemical composition and optical properties of the resultant films were investigated by X-ray diffraction, field emission scanning electron microscope, energy dispersive X-ray analysis and UV–Vis spectra measurements. The results show that CdS thin films deposited by the in-situ chemical reaction synthesis have wurtzite structure with (002) plane preferential orientation and crystallite size is in the range of 16 nm–19 nm. The growth of film thickness is almost constant with deposition cycle numbers and about 96 nm per cycle.

  14. Efficient singlet exciton fission in pentacene prepared from a soluble precursor

    Directory of Open Access Journals (Sweden)

    Maxim Tabachnyk

    2016-11-01

    Full Text Available Carrier multiplication using singlet exciton fission (SF to generate a pair of spin-triplet excitons from a single optical excitation has been highlighted as a promising approach to boost the photocurrent in photovoltaics (PVs thereby allowing PV operation beyond the Shockley-Queisser limit. The applicability of many efficient fission materials, however, is limited due to their poor solubility. For instance, while acene-based organics such as pentacene (Pc show high SF yields (up to200%, the plain acene backbone renders the organic molecule insoluble in common organic solvents. Previous approaches adding solubilizing side groups such as bis(tri-iso-propylsilylethynyl to the Pc core resulted in low vertical carrier mobilities due to reduction of the transfer integrals via steric hindrance, which prevented high efficiencies in PVs. Here we show how to achieve good solubility while retaining the advantages of molecular Pc by using a soluble precursor route. The precursor fully converts into molecular Pc through thermal removal of the solubilizing side groups upon annealing above 150 °C in the solid state. The annealed precursor shows small differences in the crystallinity compared to evaporated thin films of Pc, indicating that the Pc adopts the bulk rather than surface polytype. Furthermore, we identify identical SF properties such as sub-100 fs fission time and equally long triplet lifetimes in both samples.

  15. Direct nanoimprint lithography of Al2O3 using a chelated monomer-based precursor

    International Nuclear Information System (INIS)

    Ganesan, Ramakrishnan; Dinachali, Saman Safari; Lim, Su Hui; Saifullah, M S M; He, Chaobin; Low, Hong Yee; Chong, Wee Tit; Lim, Andrew H H; Yong, Jin Jie; Thian, Eng San

    2012-01-01

    Nanostructuring of Al 2 O 3 is predominantly achieved by the anodization of aluminum film and is limited to obtaining porous anodized aluminum oxide (AAO). One of the main restrictions in developing approaches for direct fabrication of various types of Al 2 O 3 patterns, such as lines, pillars, holes, etc, is the lack of a processable aluminum-containing resist. In this paper, we demonstrate a stable precursor prepared by reacting aluminum tri-sec-butoxide with 2-(methacryloyloxy)ethyl acetoacetate, a chelating monomer, which can be used for large area direct nanoimprint lithography of Al 2 O 3 . Chelation in the precursor makes it stable against hydrolysis whilst the presence of a reactive methacrylate group renders it polymerizable. The precursor was mixed with a cross-linker and their in situ thermal free-radical co-polymerization during nanoimprinting rigidly shaped the patterns, trapped the metal atoms, reduced the surface energy and strengthened the structures, thereby giving a ∼100% yield after demolding. The imprinted structures were heat-treated, leading to the loss of organics and their subsequent shrinkage. Amorphous Al 2 O 3 patterns with line-widths as small as 17 nm were obtained. Our process utilizes the advantages of sol–gel and methacrylate routes for imprinting and at the same time alleviates the disadvantages associated with both these methods. With these benefits, the chelating monomer route may be the harbinger of the universal scheme for direct nanoimprinting of metal oxides. (paper)

  16. Thermodynamic investigation of the MOCVD of copper films from bis ...

    Indian Academy of Sciences (India)

    Equilibrium concentrations of various condensed and gaseous phases have been thermodynamically calculated, using the free energy minimization criterion, for the metalorganic chemical vapour deposition (MOCVD) of copper films using bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) as the precursor material.

  17. Preparation of high quality superconducting thin MgB2 films for electronics

    International Nuclear Information System (INIS)

    Surdu, Andrei; Zdravkov, Vladimir; Sidorenko, Anatolie; Rossolenko, Anna; Ryazanov, Valerii; Bdikin, Igor; Kroemer, Oliver; Nold, Eberhard; Koch, Thomas; Schimmel, Thomas

    2007-01-01

    In this work we report the growth of high-Tc MgB 2 smooth films which are prepared in a two-step process: 1) deposition of the precursor films and 2) their annealing in Mg vapor with a specially designed, reusable reactor. Our method opens perspectives for the use of MgB 2 films in microelectronics, especially for high-frequency applications. (authors)

  18. Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskelae, M.

    2004-01-01

    Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous

  19. Characterization of nanostructured photosensitive cadmium sulphide thin films grown by SILAR deposition technique

    International Nuclear Information System (INIS)

    Ubale, A.U.; Bargal, A.N.

    2010-01-01

    This paper reports the preparation of photosensitive nanostructured CdS thin films by successive ionic layer adsorption and reaction (SILAR) method at room temperature. To obtain good quality CdS thin films, preparative conditions such as concentration of cationic and anionic precursors, adsorption and rinsing time durations etc. are optimized. The structural, optical and electrical characterizations of the as-deposited and annealed CdS thin films were carried out using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity methods. The photoconductivity studies showed that the annealed films are more than that photosensitive. The TEP measurement shows that deposited films are of n-type. (author)

  20. Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

    International Nuclear Information System (INIS)

    Simoes, A.Z.; Riccardi, C.S.; Cavalcante, L.S.; Gonzalez, A.H.M.; Longo, E.; Varela, J.A.

    2008-01-01

    The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi 3.25 La 0.75 Ti 3 O 12 was investigated. Films with thicknesses ranging from 230 to 404 nm were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness

  1. Characterisation of electrodeposited polycrystalline uranium dioxide thin films on nickel foil for industrial applications

    International Nuclear Information System (INIS)

    Adamska, A.M.; Bright, E. Lawrence; Sutcliffe, J.; Liu, W.; Payton, O.D.; Picco, L.; Scott, T.B.

    2015-01-01

    Polycrystalline uranium dioxide thin films were grown on nickel substrates via aqueous electrodeposition of a precursor uranyl salt. The arising semiconducting uranium dioxide thin films exhibited a tower-like morphology, which may be suitable for future application in 3D solar cell applications. The thickness of the homogenous, tower-like films reached 350 nm. Longer deposition times led to the formation of thicker (up to 1.5 μm) and highly porous films. - Highlights: • Electrodeposition of polycrystalline UO_2 thin films • Tower-like morphology for 3D solar cell applications • Novel technique for separation of heavy elements from radioactive waste streams

  2. Lessons learned on probabilistic methodology for precursor analyses

    International Nuclear Information System (INIS)

    Babst, Siegfried; Wielenberg, Andreas; Gaenssmantel, Gerhard

    2016-01-01

    Based on its experience in precursor assessment of operating experience from German NPP and related international activities in the field, GRS has identified areas for enhancing probabilistic methodology. These are related to improving the completeness of PSA models, to insufficiencies in probabilistic assessment approaches, and to enhancements of precursor assessment methods. Three examples from the recent practice in precursor assessments illustrating relevant methodological insights are provided and discussed in more detail. Our experience reinforces the importance of having full scope, current PSA models up to Level 2 PSA and including hazard scenarios for precursor analysis. Our lessons learned include that PSA models should be regularly updated regarding CCF data and inclusion of newly discovered CCF mechanisms or groups. Moreover, precursor classification schemes should be extended to degradations and unavailabilities of the containment function. Finally, PSA and precursor assessments should put more emphasis on the consideration of passive provisions for safety, e. g. by sensitivity cases.

  3. Lessons learned on probabilistic methodology for precursor analyses

    Energy Technology Data Exchange (ETDEWEB)

    Babst, Siegfried [Gesellschaft fuer Anlagen- und Reaktorsicherheit (GRS) gGmbH, Berlin (Germany); Wielenberg, Andreas; Gaenssmantel, Gerhard [Gesellschaft fuer Anlagen- und Reaktorsicherheit (GRS) gGmbH, Garching (Germany)

    2016-11-15

    Based on its experience in precursor assessment of operating experience from German NPP and related international activities in the field, GRS has identified areas for enhancing probabilistic methodology. These are related to improving the completeness of PSA models, to insufficiencies in probabilistic assessment approaches, and to enhancements of precursor assessment methods. Three examples from the recent practice in precursor assessments illustrating relevant methodological insights are provided and discussed in more detail. Our experience reinforces the importance of having full scope, current PSA models up to Level 2 PSA and including hazard scenarios for precursor analysis. Our lessons learned include that PSA models should be regularly updated regarding CCF data and inclusion of newly discovered CCF mechanisms or groups. Moreover, precursor classification schemes should be extended to degradations and unavailabilities of the containment function. Finally, PSA and precursor assessments should put more emphasis on the consideration of passive provisions for safety, e. g. by sensitivity cases.

  4. Mars MetNet Precursor Mission Status

    Science.gov (United States)

    Harri, A.-M.; Aleksashkin, S.; Guerrero, H.; Schmidt, W.; Genzer, M.; Vazquez, L.; Haukka, H.

    2013-09-01

    We are developing a new kind of planetary exploration mission for Mars in collaboration between the Finnish Meteorological Institute (FMI), Lavochkin Association (LA), Space Research Institute (IKI) and Institutio Nacional de Tecnica Aerospacial (INTA). The Mars MetNet mission is based on a new semi-hard landing vehicle called MetNet Lander (MNL). The scientific payload of the Mars MetNet Precursor [1] mission is divided into three categories: Atmospheric instruments, Optical devices and Composition and structure devices. Each of the payload instruments will provide significant insights in to the Martian atmospheric behavior. The key technologies of the MetNet Lander have been qualified and the electrical qualification model (EQM) of the payload bay has been built and successfully tested.

  5. Precursors to suicidality and violence on antidepressants

    DEFF Research Database (Denmark)

    Bielefeldt, Andreas Ø; Danborg, Pia B; Gøtzsche, Peter C

    2016-01-01

    OBJECTIVE: To quantify the risk of suicidality and violence when selective serotonin and serotonin-norepinephrine reuptake inhibitors are given to adult healthy volunteers with no signs of a mental disorder. DESIGN: Systematic review and meta-analysis. MAIN OUTCOME MEASURE: Harms related...... to suicidality, hostility, activation events, psychotic events and mood disturbances. SETTING: Published trials identified by searching PubMed and Embase and clinical study reports obtained from the European and UK drug regulators. PARTICIPANTS: Double-blind, placebo-controlled trials in adult healthy volunteers...... that reported on suicidality or violence or precursor events to suicidality or violence. RESULTS: A total of 5787 publications were screened and 130 trials fulfilled our inclusion criteria. The trials were generally uninformative; 97 trials did not report the randomisation method, 75 trials did not report any...

  6. German precursor study: methods and results

    International Nuclear Information System (INIS)

    Hoertner, H.; Frey, W.; von Linden, J.; Reichart, G.

    1985-01-01

    This study has been prepared by the GRS by contract of the Federal Minister of Interior. The purpose of the study is to show how the application of system-analytic tools and especially of probabilistic methods on the Licensee Event Reports (LERs) and on other operating experience can support a deeper understanding of the safety-related importance of the events reported in reactor operation, the identification of possible weak points, and further conclusions to be drawn from the events. Additionally, the study aimed at a comparison of its results for the severe core damage frequency with those of the German Risk Study as far as this is possible and useful. The German Precursor Study is a plant-specific study. The reference plant is Biblis NPP with its very similar Units A and B, whereby the latter was also the reference plant for the German Risk Study

  7. Silicon dioxide obtained by Polymeric Precursor Method

    International Nuclear Information System (INIS)

    Oliveira, C.T.; Granado, S.R.; Lopes, S.A.; Cavalheiro, A.A.

    2011-01-01

    The Polymeric Precursor Method is able for obtaining several oxide material types with high surface area even obtained in particle form. Several MO 2 oxide types such as titanium, silicon and zirconium ones can be obtained by this methodology. In this work, the synthesis of silicon oxide was monitored by thermal analysis, XRD and surface area analysis in order to demonstrate the influence of the several synthesis and calcining parameters. Surface area values as higher as 370m2/g and increasing in the micropore volume nm were obtained when the material was synthesized by using ethylene glycol as polymerizing agent. XRD analysis showed that the material is amorphous when calcinated at 600°C in despite of the time of calcining, but the material morphology is strongly influenced by the polymeric resin composition. Using Glycerol as polymerizing agent, the pore size increase and the surface area goes down with the increasing in decomposition time, when compared to ethylene glycol. (author)

  8. Ancient engineers' inventions precursors of the present

    CERN Document Server

    Rossi, Cesare

    2017-01-01

    This book describes the inventions and designs of ancient engineers who are the precursors of the present. The period ranges mainly from 300 B.C. to 1600 A.D. with several exceptions. Many of the oldest inventions are documented by archaeological finds, often very little known, mainly from Pompeii, Herculaneum and Stabiae and reveal a surprising modernity in their conception. Most of the inventions presented in the first four parts of the book were conceived up to the late Roman Empire and may be considered as milestones, each in their respective field. The fifth part concentrates on more recent centuries. The sixth part deals with some building construction techniques. Generally, for each of the presented inventions, three elements of research and reference are provided: written documents (the classics), iconic references (coins, bas-reliefs, etc.) and archaeological findings. The authors did not write this book for engineers only; hence they describe all the devices without assuming wide technical knowledge...

  9. Highly efficient silver patterning without photo-resist using simple silver precursors

    International Nuclear Information System (INIS)

    Byun, Younghun; Hwang, Eoc-Chae; Lee, Sang-Yun; Lyu, Yi-Yeol; Yim, Jin-Heong; Kim, Jin-Young; Chang, Seok; Pu, Lyong Sun; Kim, Ji Man

    2005-01-01

    Highly efficient method for silver patterning without photo-resist was developed by using high photosensitive organo-silver precursors, which were prepared by a simple reaction of silver salts and excess of amines. The FT-IR and GC-MS spectra were recorded depending on UV exposure time, for (n-PrNH 2 )Ag(NO 3 ).0.5MeCN and (n-PrNH 2 )Ag(NO 2 ).0.5MeCN, to understand the photolysis mechanism. The results indicate not only dissociation of coordinated amine and acetonitrile, but also decomposition of corresponding anion upon UV irradiation. When a precursor thin film was exposed to broadband UV irradiation, a partially reduced and insoluble silver species were formed within several minutes. After development, the irradiated areas were treated with a reducing agent to obtain pure metallic patterns. Subsequently, annealing step was followed at 100-350 deg. C to increase the adhesion of interface and cohesion of silver particles. The line resolution of 5 μm was obtained by the present silver precursors. Film thickness was also controllable from 50 to 250 nm by repetition of the above procedure. The average electrical conductivity was in the range of 3-43 Ω cm, measured by four-point probe technique. AES depth profile of the silver pattern thus obtained showed carbon and oxygen contents are less than 1% through the whole range. Even though sulfur contaminant exists on the surface, it was believed that nearly pure silver pattern was generated

  10. Precursor conditions related to Zimbabwe's summer droughts

    Science.gov (United States)

    Nangombe, Shingirai; Madyiwa, Simon; Wang, Jianhong

    2018-01-01

    Despite the increasing severity of droughts and their effects on Zimbabwe's agriculture, there are few tools available for predicting these droughts in advance. Consequently, communities and farmers are more exposed, and policy makers are always ill prepared for such. This study sought to investigate possible cycles and precursor meteorological conditions prior to drought seasons that could be used to predict impending droughts in Zimbabwe. The Single Z-Index was used to identify and grade drought years between 1951 and 2010 according to rainfall severity. Spectral analysis was used to reveal the cycles of droughts for possible use of these cycles for drought prediction. Composite analysis was used to investigate circulation and temperature anomalies associated with severe and extreme drought years. Results indicate that severe droughts are more highly correlated with circulation patterns and embedded weather systems in the Indian Ocean and equatorial Pacific Ocean than any other area. This study identified sea surface temperatures in the average period June to August, geopotential height and wind vector in July to September period, and air temperature in September to November period as precursors that can be used to predict a drought occurrence several months in advance. Therefore, in addition to sea surface temperature, which was identified through previous research for predicting Zimbabwean droughts, the other parameters identified in this study can aid in drought prediction. Drought cycles were established at 20-, 12.5-, 3.2-, and 2.7-year cycles. The spectral peaks, 12.5, 3.2, and 2.7, had a similar timescale with the luni-solar tide, El Niño Southern Oscillation and Quasi Biennial Oscillation, respectively, and hence, occurrence of these phenomena have a possibility of indicating when the next drought might be.

  11. Metal chloride precursor synthesization of Cu{sub 2}ZnSnS{sub 4} solar cell materials

    Energy Technology Data Exchange (ETDEWEB)

    Yeh, Min-Yen; Huang, Yu-Fong; Huang, Cheng-Liang; Yang, Chyi-Da [National Kaohsiung Marine University, Kaohsiung, Taiwan (China); Wuu, Dong-Sing [National Chung Hsing University, Taichung, Taiwan (China); Lei, Po-Hsun [National Formosa University, Yunlin, Taiwan (China)

    2014-07-15

    Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films with kesterite structures were prepared by directly sol-gel synthesizing spin-coated precursors on soda-lime-glass (SLG) substrates. The CZTS precursors were prepared by using solutions of copper (II) chloride, zinc (II) chloride, tin (IV) chloride, and thiourea. The ratio of SnCl{sub 4} in the precursors was found to play a critical role in the synthesization of CZTS. CZTS phases of SnS and SnS{sub 2} were observed in the synthesized films as prepared using precursors with a close to stoichiometric ratio of CuCl{sub 2}:ZnCl{sub 2}:SnCl{sub 4}:CH{sub 4}N{sub 2}S = 4:1:1:8, where SnCl{sub 4} was 1 mol/l. The amounts of the educed SnS and SnS{sub 2} phases observed in the SEM images could be readily reduced by decreasing the volume of SnCl{sub 4} in the mixed solution. With decreasing amount of SnCl{sub 4} from 1 mol/l, the as prepared CZTS reveals a significant improvement in its crystalline properties. In this work, CZTS with an average absorption coefficient and an optical energy gap of over 10{sup 4} cm{sup -1} and ∼1.5 eV, respectively, was obtained using precursors of copper (II) chloride, zinc (II) chloride, tin (IV) chloride, and thiourea mixed in a ratio of 2:1:0.25:8, and it had good crystallinity revealing a Cu-poor composition.

  12. RIR MAPLE procedure for deposition of carbon rich Si/C/H films

    International Nuclear Information System (INIS)

    Dřínek, Vladislav; Strašák, Tomáš; Novotný, Filip; Fajgar, Radek; Bastl, Zdeněk

    2014-01-01

    We applied the resonant infrared matrix assisted pulsed laser evaporation (RIR MAPLE) technique to demonstrate a new approach to a controlled deposition of carbon rich amorphous Si/C/H film. In absence of radicals and accelerated species commonly generated in PECVD and sputtering setups, the RIR MAPLE method does not decompose precursor molecules. Moreover, unlike the standard MAPLE procedure, in which solvent molecules absorb laser energy from excimer or near infrared lasers, we applied the pulsed TEA CO 2 laser to excite the dendrimer precursor molecules in a frozen target. In this manner we achieved just cross-linking of the starting precursor on substrates and the deposition of carbon rich Si/C/H film. The film was analyzed by Fourier Transformed Infrared (FTIR), UV/VIS, Raman and X-ray Photoelectron (XPS) spectroscopy and Atomic Force Microscopy (AFM) technique. According to analyses the film retained the precursor elemental composition free of graphitic (sp 2 ) clusters. In course of reaction only the peripheral allyl groups containing C=C bonds were opened to achieve cross-linking. Whereas annealing to 300 °C was necessary for the elimination of =C–H 1 , 2 bonds in the films prepared at 200 °C, those bonds vanished completely for the films prepared at substrate temperature 255 °C. The film posseses a smooth surface with root mean square (RMS) parameter up to 10 nm within scanned distance 2.5 μm.

  13. RIR MAPLE procedure for deposition of carbon rich Si/C/H films

    Energy Technology Data Exchange (ETDEWEB)

    Dřínek, Vladislav, E-mail: drinek@icpf.cas.cz [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojova 135, 165 02 Prague 6 (Czech Republic); Strašák, Tomáš [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojova 135, 165 02 Prague 6 (Czech Republic); Novotný, Filip [Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University, 115 19 Prague (Czech Republic); Fajgar, Radek [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojova 135, 165 02 Prague 6 (Czech Republic); Bastl, Zdeněk [J. Heyrovsky Institute of Physical Chemistry of the ASCR, v. v. i., Dolejškova 2155/3, 182 23 Prague 8 (Czech Republic)

    2014-02-15

    We applied the resonant infrared matrix assisted pulsed laser evaporation (RIR MAPLE) technique to demonstrate a new approach to a controlled deposition of carbon rich amorphous Si/C/H film. In absence of radicals and accelerated species commonly generated in PECVD and sputtering setups, the RIR MAPLE method does not decompose precursor molecules. Moreover, unlike the standard MAPLE procedure, in which solvent molecules absorb laser energy from excimer or near infrared lasers, we applied the pulsed TEA CO{sub 2} laser to excite the dendrimer precursor molecules in a frozen target. In this manner we achieved just cross-linking of the starting precursor on substrates and the deposition of carbon rich Si/C/H film. The film was analyzed by Fourier Transformed Infrared (FTIR), UV/VIS, Raman and X-ray Photoelectron (XPS) spectroscopy and Atomic Force Microscopy (AFM) technique. According to analyses the film retained the precursor elemental composition free of graphitic (sp{sup 2}) clusters. In course of reaction only the peripheral allyl groups containing C=C bonds were opened to achieve cross-linking. Whereas annealing to 300 °C was necessary for the elimination of =C–H{sub 1}, {sub 2} bonds in the films prepared at 200 °C, those bonds vanished completely for the films prepared at substrate temperature 255 °C. The film posseses a smooth surface with root mean square (RMS) parameter up to 10 nm within scanned distance 2.5 μm.

  14. Science Fiction on Film.

    Science.gov (United States)

    Burmester, David

    1985-01-01

    Reviews science fiction films used in a science fiction class. Discusses feature films, short science fiction films, short story adaptations, original science fiction pieces and factual science films that enrich literature. (EL)

  15. Development of an accident sequence precursor methodology and its application to significant accident precursors

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Seung Hyun; Park, Sung Hyun; Jae, Moo Sung [Dept. of of Nuclear Engineering, Hanyang University, Seoul (Korea, Republic of)

    2017-03-15

    The systematic management of plant risk is crucial for enhancing the safety of nuclear power plants and for designing new nuclear power plants. Accident sequence precursor (ASP) analysis may be able to provide risk significance of operational experience by using probabilistic risk assessment to evaluate an operational event quantitatively in terms of its impact on core damage. In this study, an ASP methodology for two operation mode, full power and low power/shutdown operation, has been developed and applied to significant accident precursors that may occur during the operation of nuclear power plants. Two operational events, loss of feedwater and steam generator tube rupture, are identified as ASPs. Therefore, the ASP methodology developed in this study may contribute to identifying plant risk significance as well as to enhancing the safety of nuclear power plants by applying this methodology systematically.

  16. Precursors of chicken flavor. II. Identification of key flavor precursors using sensory methods.

    Science.gov (United States)

    Aliani, Michel; Farmer, Linda J

    2005-08-10

    Sensory evaluation was used to identify flavor precursors that are critical for flavor development in cooked chicken. Among the potential flavor precursors studied (thiamin, inosine 5'-monophosphate, ribose, ribose-5-phosphate, glucose, and glucose-6-phosphate), ribose appears most important for chicken aroma. An elevated concentration (added or natural) of only 2-4-fold the natural concentration gives an increase in the selected aroma and flavor attributes of cooked chicken meat. Assessment of the volatile odor compounds by gas chromatography-odor assessment and gas chromatography-mass spectrometry showed that ribose increased odors described as "roasted" and "chicken" and that the changes in odor due to additional ribose are probably caused by elevated concentrations of compounds such as 2-furanmethanethiol, 2-methyl-3-furanthiol, and 3-methylthiopropanal.

  17. Enumeration of minimal stoichiometric precursor sets in metabolic networks.

    Science.gov (United States)

    Andrade, Ricardo; Wannagat, Martin; Klein, Cecilia C; Acuña, Vicente; Marchetti-Spaccamela, Alberto; Milreu, Paulo V; Stougie, Leen; Sagot, Marie-France

    2016-01-01

    What an organism needs at least from its environment to produce a set of metabolites, e.g. target(s) of interest and/or biomass, has been called a minimal precursor set. Early approaches to enumerate all minimal precursor sets took into account only the topology of the metabolic network (topological precursor sets). Due to cycles and the stoichiometric values of the reactions, it is often not possible to produce the target(s) from a topological precursor set in the sense that there is no feasible flux. Although considering the stoichiometry makes the problem harder, it enables to obtain biologically reasonable precursor sets that we call stoichiometric. Recently a method to enumerate all minimal stoichiometric precursor sets was proposed in the literature. The relationship between topological and stoichiometric precursor sets had however not yet been studied. Such relationship between topological and stoichiometric precursor sets is highlighted. We also present two algorithms that enumerate all minimal stoichiometric precursor sets. The first one is of theoretical interest only and is based on the above mentioned relationship. The second approach solves a series of mixed integer linear programming problems. We compared the computed minimal precursor sets to experimentally obtained growth media of several Escherichia coli strains using genome-scale metabolic networks. The results show that the second approach efficiently enumerates minimal precursor sets taking stoichiometry into account, and allows for broad in silico studies of strains or species interactions that may help to understand e.g. pathotype and niche-specific metabolic capabilities. sasita is written in Java, uses cplex as LP solver and can be downloaded together with all networks and input files used in this paper at http://www.sasita.gforge.inria.fr.

  18. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    International Nuclear Information System (INIS)

    Shin Jinhong; Waheed, Abdul; Winkenwerder, Wyatt A.; Kim, Hyun-Woo; Agapiou, Kyriacos; Jones, Richard A.; Hwang, Gyeong S.; Ekerdt, John G.

    2007-01-01

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO 2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH 2 (PMe 3 ) 4 (Me = CH 3 ) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase

  19. Hydrodeoxygenation of coal using organometallic catalyst precursors

    Science.gov (United States)

    Kirby, Stephen R.

    2002-04-01

    coals. Trends within the data were similar to those reported by other authors. Based on the conclusions from both the model compound studies and the coal analysis, predictions were made of the catalyst precursors' performance in the HDO of the three selected coals. It was concluded that CoMo-T2 is a desirable catalyst precursor for the HDO of coals (particularly low-rank coals), but that an optimum set of conditions must be determined to take full advantage of its HDO ability. (Abstract shortened by UMI.)

  20. Operational experience feedback with precursor analysis

    International Nuclear Information System (INIS)

    Koncar, M.; Ferjancic, M.; Muehleisen, A.; Vojnovic, D.

    2003-01-01

    Experience of practical operation is a valuable source of information for improving the safety and reliability of nuclear power plants. Operational experience feedback (Olef) system manages this aspect of NPP operation. The traditional ways of investigating operational events, such as the root cause analysis (RCA), are predominantly qualitative. RCA as a part of the Olef system provides technical guidance and management expectations in the conduct of assessing the root cause to prevent recurrence, covering the following areas: conditions preceding the event, sequence of events, equipment performance and system response, human performance considerations, equipment failures, precursors to the event, plant response and follow-up, radiological considerations, regulatory process considerations and safety significance. The root cause of event is recognized when there is no known answer on question 'why has it happened?' regarding relevant condition that may have affected the event. At that point the Olef is proceeding by actions taken in response to events, utilization, dissemination and exchange of operating experience information and at the end reviewing the effectiveness of the Olef. Analysis of the event and the selection of recommended corrective/preventive actions for implementation and prioritization can be enhanced by taking into account the information and insights derived from Pasa-based analysis. A Pasa based method, called probabilistic precursor event analysis (PPE A) provides a complement to the RCA approach by focusing on how an event might have developed adversely, and implies the mapping of an operational event on a probabilistic risk model of the plant in order to obtain a quantitative assessment of the safety significance of the event PSA based event analysis provides, due to its quantitative nature, appropriate prioritization of corrective actions. PPEA defines requirements for PSA model and code, identifies input requirements and elaborates following

  1. Enhanced Performance of PbS-quantum-dot-sensitized Solar Cells via Optimizing Precursor Solution and Electrolytes

    Science.gov (United States)

    Tian, Jianjun; Shen, Ting; Liu, Xiaoguang; Fei, Chengbin; Lv, Lili; Cao, Guozhong

    2016-03-01

    This work reports a PbS-quantum-dot-sensitized solar cell (QDSC) with power conversion efficiency (PCE) of 4%. PbS quantum dots (QDs) were grown on mesoporous TiO2 film using a successive ion layer absorption and reaction (SILAR) method. The growth of QDs was found to be profoundly affected by the concentration of the precursor solution. At low concentrations, the rate-limiting factor of the crystal growth was the adsorption of the precursor ions, and the surface growth of the crystal became the limiting factor in the high concentration solution. The optimal concentration of precursor solution with respect to the quantity and size of synthesized QDs was 0.06 M. To further increase the performance of QDSCs, the 30% deionized water of polysulfide electrolyte was replaced with methanol to improve the wettability and permeability of electrolytes in the TiO2 film, which accelerated the redox couple diffusion in the electrolyte solution and improved charge transfer at the interfaces between photoanodes and electrolytes. The stability of PbS QDs in the electrolyte was also improved by methanol to reduce the charge recombination and prolong the electron lifetime. As a result, the PCE of QDSC was increased to 4.01%.

  2. Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2008-10-01

    A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

  3. Geometrizing configurations. Heinrich Hertz and his mathematical precursors

    DEFF Research Database (Denmark)

    Lützen, Jesper

    1999-01-01

    A comparison between the methods used by Heinrich hertz and his mathematician precursors such as Liouville, Lipschitz and Darboux in order to apply differential geometry in mechanics......A comparison between the methods used by Heinrich hertz and his mathematician precursors such as Liouville, Lipschitz and Darboux in order to apply differential geometry in mechanics...

  4. The electromagnetic Brillouin precursor in one-dimensional photonic crystals

    NARCIS (Netherlands)

    Uitham, R.; Hoenders, B. J.

    2008-01-01

    We have calculated the electromagnetic Brillouin precursor that arises in a one-dimensional photonic crystal that consists of two homogeneous slabs which each have a single electron resonance. This forerunner is compared with the Brillouin precursor that arises in a homogeneous double-electron

  5. Thin films prepared from tungstate glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Montanari, B.; Ribeiro, S.J.L.; Messaddeq, Y. [Departamento de Quimica Geral e Inorganica, Instituto de Quimica, Sao Paulo State University-UNESP, CP 355, CEP 14800-900, Araraquara, SP (Brazil); Li, M.S. [Instituto de Fisica, USP, CP 369, CEP 13560-970, Sao Carlos, SP (Brazil); Poirier, G. [Departamento de Ciencias Exatas, UNIFAL-MG, CEP 37130-000, Alfenas-MG (Brazil)], E-mail: gael@unifal-mg.edu.br

    2008-01-30

    Vitreous samples containing high concentrations of WO{sub 3} (above 40% M) have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. These films were characterized by X-ray diffraction (XRD), perfilometry, X-ray energy dispersion spectroscopy (EDS), M-Lines and UV-vis absorption spectroscopy. In this work, experimental parameters were established to obtain stable thin films showing a chemical composition close to the glass precursor composition and with a high concentration of WO{sub 3}. These amorphous thin films of about 4 {mu}m in thickness exhibit a deep blue coloration but they can be bleached by thermal treatment near the glass transition temperature. Such bleached films show several guided modes in the visible region and have a high refractive index. Controlled crystallization was realized and thus it was possible to obtain WO{sub 3} microcrystals in the amorphous phase.

  6. Dynamic stabilization of disruption precursors in tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Maoquan, Wang; Jianshan, Mao; Yuan, Pan [Academia Sinica, Hefei, AH (China). Inst. of Plasma Physics

    1994-12-01

    A method for dynamic stabilization of the disruption precursors in tokamak is proposed, that is a controlled ac current induced and added to the equilibrium current. The ac currents applied can be a sine alternative current with a relevant frequency, or a pulsed current with a suitable pulsed width {tau} and or a discontinuous pulsed current whose width {tau} is very shorter than the intervals between pulses, and or a `sawtooth` pulsed current with the time of ramp phase of the sawtooth is very much shorter than the sawtooth descending time, the ratio of them can be {<=}10{sup -3}. The physical model of the ac current drive is analyzed in detail. The suppression role of the ac current on the MHD perturbations was analyzed in theory and proved numerically. It is indicated that the ac current can make the discontinuous derivative, {Delta}`, more favorable for the tearing mode stabilities, and so, as long as the parameters of the applied ac currents are selected suitably, the MHD perturbations can be suppressed effectively, the perturbations will be in the zero-growing state, the profile of the plasma current and temperature remain in the initial states and not variate basically, the tokamak be in the stabilized operation state. (8 figs.).

  7. Assimilation of NAD(+) precursors in Candida glabrata.

    Science.gov (United States)

    Ma, Biao; Pan, Shih-Jung; Zupancic, Margaret L; Cormack, Brendan P

    2007-10-01

    The yeast pathogen Candida glabrata is a nicotinamide adenine dinucleotide (NAD(+)) auxotroph and its growth depends on the environmental supply of vitamin precursors of NAD(+). C. glabrata salvage pathways defined in this article allow NAD(+) to be synthesized from three compounds - nicotinic acid (NA), nicotinamide (NAM) and nicotinamide riboside (NR). NA is salvaged through a functional Preiss-Handler pathway. NAM is first converted to NA by nicotinamidase and then salvaged by the Preiss-Handler pathway. Salvage of NR in C. glabrata occurs via two routes. The first, in which NR is phosphorylated by the NR kinase Nrk1, is independent of the Preiss-Handler pathway. The second is a novel pathway in which NR is degraded by the nucleosidases Pnp1 and Urh1, with a minor role for Meu1, and ultimately converted to NAD(+) via the nicotinamidase Pnc1 and the Preiss-Handler pathway. Using C. glabrata mutants whose growth depends exclusively on the external NA or NR supply, we also show that C. glabrata utilizes NR and to a lesser extent NA as NAD(+) sources during disseminated infection.

  8. Modelling earth current precursors in earthquake prediction

    Directory of Open Access Journals (Sweden)

    R. Di Maio

    1997-06-01

    Full Text Available This paper deals with the theory of earth current precursors of earthquake. A dilatancy-diffusion-polarization model is proposed to explain the anomalies of the electric potential, which are observed on the ground surface prior to some earthquakes. The electric polarization is believed to be the electrokinetic effect due to the invasion of fluids into new pores, which are opened inside a stressed-dilated rock body. The time and space variation of the distribution of the electric potential in a layered earth as well as in a faulted half-space is studied in detail. It results that the surface response depends on the underground conductivity distribution and on the relative disposition of the measuring dipole with respect to the buried bipole source. A field procedure based on the use of an areal layout of the recording sites is proposed, in order to obtain the most complete information on the time and space evolution of the precursory phenomena in any given seismic region.

  9. Enzymatic synthesis of vitamin B6 precursor

    Directory of Open Access Journals (Sweden)

    Prlainović Nevena Ž.

    2013-01-01

    Full Text Available 3-Cyano-4-ethoxymethyl-6-methyl-2-pyridone is an important precursor in the synthesis of vitamin B6, obtained in the addition reaction between 2-cyanoacetamide and 1-ethoxy-2,4-pentanedione catalyzed by lipase from Candida rugosa (triacylglycerol ester hydrolases, EC 3.1.1.3. This work shows new experimental data and mathematical modeling of lipase catalyzed synthesis of 3-cyano-4-ethoxymethyl-6-methyl-2-pyridone, starting from 1-ethoxy-2,4-pentanedione and 2-cyanoacetamide. Kinetic measurements were done at 50 oC with enzyme concentration of 1.2 % w/v. Experimental results were fitted with two kinetic models: the ordered bi-ter and ping-pong bi-ter model, and the initial rates of the reaction were found to correlate best with a ping-pong bi-ter mechanism with inhibition by 2-cyanoacetamide. Obtained specificity constants indicated that lipase from C. rugosa had higher affinity towards 1-ethoxy-2,4-pentanedione and less bulky substrates. [Projekat Ministarstva nauke Republike Srbije, br. 172013, br. III 46010 and br. 172049

  10. Earth Observing System precursor data sets

    Science.gov (United States)

    Mah, Grant R.; Eidenshink, Jeff C.; Sheffield, K. W.; Myers, Jeffrey S.

    1993-08-01

    The Land Processes Distributed Active Archive Center (DAAC) is archiving and processing precursor data from airborne and spaceborne instruments such as the thermal infrared multispectral scanner (TIMS), the NS-001 and thematic mapper simulators (TMS), and the advanced very high resolution radiometer (AVHRR). The instrument data are being used to construct data sets that simulate the spectral and spatial characteristics of the advanced spaceborne thermal emission and reflection radiometer (ASTER) and the moderate resolution imaging spectrometer (MODIS) flight instruments scheduled to be flown on the EOS-AM spacecraft. Ames Research Center has developed and is flying a MODIS airborne simulator (MAS), which provides coverage in both MODIS and ASTER bands. A simulation of an ASTER data set over Death Valley, California has been constructed using a combination of TMS and TIMS data, along with existing digital elevation models that were used to develop the topographic information. MODIS data sets are being simulated by using MAS for full-band site coverage at high resolution and AVHRR for global coverage at 1 km resolution.

  11. PRECURSORS TO INTERSTELLAR SHOCKS OF SOLAR ORIGIN

    Energy Technology Data Exchange (ETDEWEB)

    Gurnett, D. A.; Kurth, W. S. [University of Iowa, Department of Physics and Astronomy, Iowa City, IA 52242 (United States); Stone, E. C.; Cummings, A. C. [California Institute of Technology, 1200 East California Boulevard, Pasadena, CA 91125 (United States); Krimigis, S. M.; Decker, R. B. [Applied Physics Laboratory/JHU, 11100 Johns Hopkins Road, Laurel, MD 20723 (United States); Ness, N. F. [Catholic University of America, 620 Michigan Avenue NE, Washington, DC 20064 (United States); Burlaga, L. F., E-mail: donald-gurnett@uiowa.edu [NASA Goddard Space Flight Center, 8800 Greenbelt Road, Greenbelt, MD 20771 (United States)

    2015-08-20

    On or about 2012 August 25, the Voyager 1 spacecraft crossed the heliopause into the nearby interstellar plasma. In the nearly three years that the spacecraft has been in interstellar space, three notable particle and field disturbances have been observed, each apparently associated with a shock wave propagating outward from the Sun. Here, we present a detailed analysis of the third and most impressive of these disturbances, with brief comparisons to the two previous events, both of which have been previously reported. The shock responsible for the third event was first detected on 2014 February 17 by the onset of narrowband radio emissions from the approaching shock, followed on 2014 May 13 by the abrupt appearance of intense electron plasma oscillations generated by electrons streaming outward ahead of the shock. Finally, the shock arrived on 2014 August 25, as indicated by a jump in the magnetic field strength and the plasma density. Various disturbances in the intensity and anisotropy of galactic cosmic rays were also observed ahead of the shock, some of which are believed to be caused by the reflection and acceleration of cosmic rays by the magnetic field jump at the shock, and/or by interactions with upstream plasma waves. Comparisons to the two previous weaker events show somewhat similar precursor effects, although differing in certain details. Many of these effects are very similar to those observed in the region called the “foreshock” that occurs upstream of planetary bow shocks, only on a vastly larger spatial scale.

  12. Innate lymphoid cells, precursors and plasticity.

    Science.gov (United States)

    Gronke, Konrad; Kofoed-Nielsen, Michael; Diefenbach, Andreas

    2016-11-01

    Innate lymphoid cells (ILC) have only recently been recognized as a separate entity of the lymphoid lineage. Their subpopulations share common characteristics in terms of early development and major transcriptional circuitry with their related cousins of the T cell world. It is currently hypothesized that ILCs constitute an evolutionary older version of the lymphoid immune system. They are found at all primary entry points for pathogens such as mucosal surfaces of the lung and gastrointestinal system, the skin and the liver, which is the central contact point for pathogens that breach the intestinal barrier and enter the circulation. There, ILC contribute to the first line defense as well as to organ homeostasis. However, ILC are not only involved in classical defense tasks, but also contribute to the organogenesis of lymphoid organs as well as tissue remodeling and even stem cell regeneration. ILC may, therefore, implement different functions according to their emergence in ontogeny, their development and their final tissue location. We will review here their early development from precursors of the fetal liver and the adult bone marrow as well as their late plasticity in adaptation to their environment. Copyright © 2016 European Federation of Immunological Societies. Published by Elsevier B.V. All rights reserved.

  13. Identification, Selection, and Enrichment of Cardiomyocyte Precursors

    Directory of Open Access Journals (Sweden)

    Bianca Ferrarini Zanetti

    2013-01-01

    Full Text Available The large-scale production of cardiomyocytes is a key step in the development of cell therapy and tissue engineering to treat cardiovascular diseases, particularly those caused by ischemia. The main objective of this study was to establish a procedure for the efficient production of cardiomyocytes by reprogramming mesenchymal stem cells from adipose tissue. First, lentiviral vectors expressing neoR and GFP under the control of promoters expressed specifically during cardiomyogenesis were constructed to monitor cell reprogramming into precardiomyocytes and to select cells for amplification and characterization. Cellular reprogramming was performed using 5′-azacytidine followed by electroporation with plasmid pOKS2a, which expressed Oct4, Sox2, and Klf4. Under these conditions, GFP expression began only after transfection with pOKS2a, and less than 0.015% of cells were GFP+. These GFP+ cells were selected for G418 resistance to find molecular markers of cardiomyocytes by RT-PCR and immunocytochemistry. Both genetic and protein markers of cardiomyocytes were present in the selected cells, with some variations among them. Cell doubling time did not change after selection. Together, these results indicate that enrichment with vectors expressing GFP and neoR under cardiomyocyte-specific promoters can produce large numbers of cardiomyocyte precursors (CMPs, which can then be differentiated terminally for cell therapy and tissue engineering.

  14. Indium doped zinc oxide thin films obtained by electrodeposition

    International Nuclear Information System (INIS)

    Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

    2005-01-01

    Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

  15. Development of highly-ordered, ferroelectric inverse opal films using sol gel infiltration

    Science.gov (United States)

    Matsuura, N.; Yang, S.; Sun, P.; Ruda, H. E.

    2005-07-01

    Highly-ordered, ferroelectric, Pb-doped Ba0.7Sr0.3TiO3, inverse opal films were fabricated by spin-coating a sol gel precursor into a polystyrene artificial opal template followed by heat treatment. Thin films of the ferroelectric were independently studied and were shown to exhibit good dielectric properties and high refractive indices. The excellent quality of the final inverse opal film using this spin-coating infiltration method was confirmed by scanning electron microscopy images and the good correspondence between optical reflection data and theoretical simulations. Using this method, the structural and material parameters of the final ferroelectric inverse opal film were easily adjusted by template heating and through repeated infiltrations, without changes in the initial template or precursor. Also, crack-free inverse opal thin films were fabricated over areas comparable to that of the initial crack-free polystyrene template (˜100 by 100 μm2).

  16. Characterization of Cr2O3 thin films obtained by chemical vapor deposition

    International Nuclear Information System (INIS)

    Pillis, M.F.; Galego, E.; Serna, M.M.; Correa, O.V.; Ramanathan, L.V.; Franco, A.C.

    2010-01-01

    The goal of this work was the synthesis and characterization of Cr 2 O 3 thin films, obtained by chemical vapor deposition, using chromium acetylacetonate as chromium precursor. The growth of the films was carried out in a conventional horizontal MOCVD equipment, under pressures varying from 2 to 10 mbar, and temperature of 600 deg C. It was observed that the growth of the films only occurs when oxygen is present in the atmosphere. Under growth pressures of 2 and 5 mbar the growth takes place but under 10 mbar of pressure the precursor is dragged and the growth does not occur. The characterization of the films was performed by using scanning electron microscopy and X-ray diffraction. The films presented a columnar structure, and thickness varying from 40 to 250 nm. The influence of some process parameters is discussed. (author)

  17. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Hyeonju Lee

    2016-10-01

    Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

  18. Laser induced forward transfer of SnO2 for sensing applications using different precursors systems

    Science.gov (United States)

    Mattle, Thomas; Hintennach, Andreas; Lippert, Thomas; Wokaun, Alexander

    2013-02-01

    This paper presents the transfer of SnO2 by laser induced forward transfer (LIFT) for gas sensor applications. Different donor substrates of SnO2 with and without triazene polymer (TP) as a dynamic release layer were prepared. Transferring these films under different conditions were evaluated by optical microscopy and functionality. Transfers of sputtered SnO2 films do not lead to satisfactory results and transfers of SnO2 nanoparticles are difficult. Transfers of SnO2 nanoparticles can only be achieved when applying a second laser pulse to the already transferred material, which improves the adhesion resulting in a complete pixel. A new approach of decomposing the transfer material during LIFT transfer was developed. Donor films based on UV absorbing metal complex precursors namely, SnCl2(acac)2 were prepared and transferred using the LIFT technique. Transfer conditions were optimized for the different systems, which were deposited onto sensor-like microstructures. The conductivity of the transferred material at temperatures of about 400 ∘C are in a range usable for SnO2 gas sensors. First sensing tests were carried out and the transferred material proved to change conductivity when exposed to ethanol, acetone, and methane.

  19. Black Films and Film-Makers.

    Science.gov (United States)

    Patterson, Lindsay, Ed.

    The development of black films and the attitudes of the film industry toward black films and black actors are some of the topics examined in this anthology of essays. Section 1, "Nigger to Supernigger," contains such articles as "The Death of Rastus: Negroes in American Films" by Thomas R. Cripps and "Folk Values in a New Medium" by Alain Locke…

  20. A critical review of Electric Earthquake Precursors

    Directory of Open Access Journals (Sweden)

    F. Vallianatos

    2001-06-01

    Full Text Available The generation of transient electric potential prior to rupture has been demonstrated in a number of laboratory experiments involving both dry and wet rock specimens. Several different electrification effects are responsible for these observations, but how these may scale up co-operatively in large heterogeneous rock volumes, to produce observable macroscopic signals, is still incompletely understood. Accordingly, the nature and properties of possible Electric Earthquake Precursors (EEP are still inadequately understood. For a long time observations have been fragmentary, narrow band and oligo-parametric (for instance, the magnetic field was not routinely measured. In general, the discrimination of purported EEP signals relied on "experience" and ad hoc empirical rules that could be shown unable to guarantee the validity of the data. In consequence, experimental studies have produced a prolific variety of signal shape, complexity and duration but no explanation for the apparently indefinite diversity. A set of inconsistent or conflicting ideas attempted to explain such observations, including different concepts about the EEP source region (near the observer or at the earthquake focus and propagation (frequently assumed to be guided by peculiar geoelectric structure. Statistics was also applied to establish the "beyond chance" association between presumed EEP signals and earthquakes. In the absence of well constrained data, this approach ended up with intense debate and controversy but no useful results. The response of the geophysical community was scepticism and by the mid-90's, the very existence of EEP was debated. At that time, a major re-thinking of EEP research began to take place, with reformulation of its queries and objectives and refocusing on the exploration of fundamental concepts, less on field experiments. The first encouraging results began to appear in the last two years of the 20th century. Observation technologies are mature

  1. A critical review of electric earthquake precursors

    Energy Technology Data Exchange (ETDEWEB)

    Tzanis, A. [Athens Univ., Athens (Italy). Dept. of Geophysics and Geothermy; Valliantos, F. [Technological Educational Institute of Crete, Chania (Greece)

    2001-04-01

    The generation of transient electric potential prior to rupture has been demonstrated in a number of laboratory experiments involving both dry and wet rock specimens. Several different electrification effects are responsible for these observations, but how these may scale up co-operatively in large heterogeneous rock volumes, to produce observable macroscopic signals, is still incompletely understood. Accordingly, the nature and properties of possible Electric Earthquake Precursors (EEP) are still inadequately understood. For a long time observations have been fragmentary, narrow band and oligo-parametric (for instance, the magnetic field was not routinely measured). In general, the discrimination of purported EEP signals relied on experience and ad hoc empirical rules that could be shown unable to guarantee the validity of the data. In consequence, experimental studies have produced a prolific variety of signal shape, complexity and duration but no explanation for the apparently indefinite diversity. A set of inconsistent or conflicting ideas attempted to explain such observations, including different concepts about the EEP source region (near the observer or at the earthquake focus) and propagation (frequently assumed to be guided by peculiar geo electric structure). Statistics was also applied to establish the beyond chance association between presumed EEP signals and earthquakes. In the absence of well constrained data, this approach ended up with intense debate and controversy but no useful results. The response of the geophysical community was scepticism and by the mid-90's, the very existence of EEP was debated. At that time, a major re-thinking of EEP research began to take place, with reformulation of its queries and objectives and refocusing on the exploration of fundamental concepts, less on field experiments. The firs encouraging results began to appear in the last two years of the 20th century. Observation technologies are mature and can guarantee

  2. PRECOMBUSTION REMOVAL OF HAZARDOUS AIR POLLUTANT PRECURSORS

    Energy Technology Data Exchange (ETDEWEB)

    Unknown

    2000-10-09

    In response to growing environmental concerns reflected in the 1990 Clean Air Act Amendment (CAAA), the United States Department of Energy (DOE) sponsored several research and development projects in late 1995 as part of an initiative entitled Advanced Environmental Control Technologies for Coal-Based Power Systems. The program provided cost-shared support for research and development projects that could accelerate the commercialization of affordable, high-efficiency, low-emission, coal-fueled electric generating technologies. Clean coal technologies developed under this program would serve as prototypes for later generations of technologies to be implemented in the industrial sector. In order to identify technologies with the greatest potential for commercial implementation, projects funded under Phase I of this program were subject to competitive review by DOE before being considered for continuation funding under Phase II. One of the primary topical areas identified under the DOE initiative relates to the development of improved technologies for reducing the emissions of air toxics. Previous studies have suggested that many of the potentially hazardous air pollutant precursors (HAPPs) occur as trace elements in the mineral matter of run-of-mine coals. As a result, these elements have the potential to be removed prior to combustion at the mine site by physical coal cleaning processes (i.e., coal preparation). Unfortunately, existing coal preparation plants are generally limited in their ability to remove HAPPs due to incomplete liberation of the mineral matter and high organic associations of some trace elements. In addition, existing physical coal cleaning plants are not specifically designed or optimized to ensure that high trace element rejections may be achieved.

  3. On important precursor of singular optics (tutorial)

    Science.gov (United States)

    Polyanskii, Peter V.; Felde, Christina V.; Bogatyryova, Halina V.; Konovchuk, Alexey V.

    2018-01-01

    The rise of singular optics is usually associated with the seminal paper by J. F. Nye and M. V. Berry [Proc. R. Soc. Lond. A, 336, 165-189 (1974)]. Intense development of this area of modern photonics has started since the early eighties of the XX century due to invention of the interfrence technique for detection and diagnostics of phase singularities, such as optical vortices in complex speckle-structured light fields. The next powerful incentive for formation of singular optics into separate area of the science on light was connectected with discovering of very practical technique for creation of singular optical beams of various kinds on the base of computer-generated holograms. In the eghties and ninetieth of the XX century, singular optics evolved, almost entirely, under the approximation of complete coherency of light field. Only at the threshold of the XXI century, it has been comprehended that the singular-optics approaches can be fruitfully expanded onto partially spatially coherent, partially polarized and polychromatic light fields supporting singularities of new kinds, that has been resulted in establishing of correlation singular optics. Here we show that correlation singular optics has much deeper roots, ascending to "pre-singular" and even pre-laser epoch and associated with the concept of partial coherence and polarization. It is remarcable that correlation singular optics in its present interpretation has forestalled the standard coherent singular optics. This paper is timed to the sixtieth anniversary of the most profound precursor of modern correlation singular optics [J. Opt. Soc. Am., 47, 895-902 (1957)].

  4. Nitrate ions as cathodic alkalization promoters for the electro-assisted deposition of sol-gel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding Shangzhi; Liu Liang [Department of Chemistry, Yuquan Campus, Zhejiang University, Hangzhou, Zhejiang 310027 (China); Hu Jiming [Department of Chemistry, Yuquan Campus, Zhejiang University, Hangzhou, Zhejiang 310027 (China)], E-mail: kejmhu@zju.edu.cn; Zhang Jianqing; Cao Chunan [Department of Chemistry, Yuquan Campus, Zhejiang University, Hangzhou, Zhejiang 310027 (China); State Key Laboratory for Corrosion and Protection, Shenyang 110016 (China)

    2008-08-15

    Nitrate was used as a promoter to prepare dodecyltrimethoxysilane thin films on aluminum substrates. With the addition of nitrate into silane sol-gel precursors, the electro-assisted formation of silane films was facilitated, as indicated by electrochemical impedance spectroscopy, scanning electron microscopy and secondary-ion mass spectroscopy, due to the promotion in cathodic alkalization. However, an extra-high concentration of nitrate would be harmful because of the salting-out effect in precursors and the soluble nitrate remaining in silane films.

  5. Structure-processing-property correlations in thin films of conjugated polymer nanocomposites and blends

    Science.gov (United States)

    Sreeram, Arvind

    Conjugated polymers have found several applications in recent years, in energy conversion and storage devices such as organic light emitting diodes, solar cells, batteries, and super capacitors. Thin films of polymers used for these applications need to be mechanically and thermally stable to withstand the harsh operating conditions. Although there is significant information on the optoelectronic properties of many of these polymers, there are only few studies on their mechanical properties. There is little information in the literature on how processing of these films influence mechanical properties. In the first part of this study, poly(p-phenylene vinylene) (PPV) films were prepared by thermolytic conversion of poly[p -phenylene (tetrahydrothiophenium)ethylene chloride] precursor films, at different temperatures and the kinetics of reaction was investigated using thermogravimetry and Fourier transform infrared (FTIR) spectroscopy. The mechanical properties of the films, studied using nanoindentation, showed a dependence on the extent of conversion and chemical composition of the films. The presence of chemical defects (e.g., carbonyl groups, detected using FTIR spectroscopy), was also found to have a noticeable effect on the modulus and hardness of the films. The storage modulus, E', and plasticity decreased with an increase in conversion, whereas the loss modulus, E", showed the opposite trend. Both the precursor and the fully-converted PPV films were found to have significantly lower E" than E', consistent with the glassy nature of the polymers at room temperature. In the second part of the study, polyacetylene films were synthesized by acid-catalyzed dehydration reaction of poly(vinyl alcohol) (PVA) precursor films. The kinetics of this reaction was monitored by thermogravimetry. The chemical structure of the conjugated polymer films was characterized by Raman and IR spectroscopy. Polyacetylene films incorporated with 1-propyl-3-methylimidazolium ionic liquid

  6. Hybrid thin films derived from UV-curable acrylate-modified waterborne polyurethane and monodispersed colloidal silica

    Directory of Open Access Journals (Sweden)

    C. H. Yang

    2012-01-01

    Full Text Available Hybrid thin films containing nano-sized inorganic domains were synthesized from UV-curable acrylate-modified waterborne polyurethane (WPU-AC and monodispersed colloidal silica with coupling agent. The coupling agent, 3-(trimethoxysilylpropyl methacrylate (MSMA, was bonded onto colloidal silica first, and then mixed with WPU-AC to form a precursor solution. This precursor was spin coated, dried and UV-cured to generate the hybrid films. The silica content in the hybrid thin films was varied from 0 to 30 wt%. Experimental results showed the aggregation of silica particles in the hybrid films. Thus, the silica domain in the hybrid films was varied from 30 to 50 nm by the different ratios of MSMAsilica to WPU-AC. The prepared hybrid films from the crosslinked WPU-AC/MSMA-silica showed much better thermal stability and mechanical properties than pure WPU-AC.

  7. Magnetic reconnection and precursor effect in coaxial discharge

    International Nuclear Information System (INIS)

    Masoud, M.M.; Soliman, H.M.; El-Khalafawy, T.A.

    1988-01-01

    A precursor pulse was observed ahead of the plasma sheath produced by a coaxial electrode discharge system. The velocity of the precursor pulse was 4x10 7 cmS -1 and the velocity of the plasma sheath was 6x10 6 cmS -1 . The precursor pulse was unaffected when an axial magnetic field of 6 K.G. was applied to the propagation chamber, while the plasma sheath velocity increased and downstream structure were changed. The precursor pulse was split, sometimes, into two or more peaks, had the same shape and structure of the original one. The rest gas was heated up to 20 e.V. when the precursor pulse was destructed. The precursor pulse propagation mechanism and parameters showed that it had a solitary wave structure and behaviour. A reversed magnetic field was detected, when the plasma sheath had diamagnetic properties, where magnetic reconnection took place. Magnetic reconnection was responsible for energy transfiguration and wave generation. This was due to acceleration mechanism of charged particles occurred by the induced electric field at the moment of magnetic reconnection. The detected induced electric field had a high field intensity and fast rise time pulse. Several instabilities were referred to magnetic reconnection and the precursor pulse observed was a result of such instabilities

  8. Advantageous use of metallic cobalt in the target for pulsed laser deposition of cobalt-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Minju, E-mail: mjying@bnu.edu.cn, E-mail: g.gehring@sheffield.ac.uk [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Blythe, Harry J.; Gerriu, Fatma M.; Fox, A. Mark; Gehring, Gillian A., E-mail: mjying@bnu.edu.cn, E-mail: g.gehring@sheffield.ac.uk [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Dizayee, Wala [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Department of Science, Salahaddin University, Erbil (Iraq); Heald, Steve M. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2016-08-15

    We investigate the magnetic properties of ZnCoO thin films grown by pulsed laser deposition (PLD) from targets made containing metallic Co or CoO precursors instead of the usual Co{sub 3}O{sub 4}. We find that the films grown from metallic Co precursors in an oxygen rich environment contain negligible amounts of Co metal and have a large magnetization at room temperature. Structural analysis by X-ray diffraction and magneto-optical measurements indicate that the enhanced magnetism is due, in part, from Zn vacancies that partially compensate the naturally occurring n-type defects. We conclude that strongly magnetic films of Zn{sub 0.95}Co{sub 0.05}O that do not contain metallic cobalt can be grown by PLD from Co-metal-precursor targets if the films are grown in an oxygen atmosphere.

  9. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi; Yoshida, Manabu; Fukuda, Nobuko; Uemura, Sei, E-mail: sei-uemura@aist.go.jp [Flexible Electronics Research Center (FLEC), National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2015-06-15

    We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10{sup 8} and a field-effect mobility of 0.3 cm{sup 2} V{sup −1} s{sup −1}. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

  10. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    International Nuclear Information System (INIS)

    Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi; Yoshida, Manabu; Fukuda, Nobuko; Uemura, Sei

    2015-01-01

    We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10 8 and a field-effect mobility of 0.3 cm 2  V −1  s −1 . These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs

  11. Investigation of electronic quality of electrodeposited cadmium sulphide layers from thiourea precursor for use in large area electronics

    Energy Technology Data Exchange (ETDEWEB)

    Ojo, A.A., E-mail: chartell2006@yahoo.com; Dharmadasa, I.M.

    2016-09-01

    CdS layers used in thin film solar cells and other electronic devices are usually grown by wet chemical methods using CdCl{sub 2} as the Cadmium source and either Na{sub 2}S{sub 2}O{sub 3}, NH{sub 4}S{sub 2}O{sub 3} or NH{sub 2}CSNH{sub 2} as Sulphur sources. Obviously, one of the sulphur precursors should produce more suitable CdS layers required to give the highest performing devices. This can only be achieved by comprehensive experimental work on growth and characterisation of CdS layers from the above mentioned sulphur sources. This paper presents the results observed on CdS layers grown by electrodepositing using two electrode configuration and thiourea as the sulphur precursor. X-ray diffraction (XRD), Raman spectroscopy, optical absorption, scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX) and photoelectrochemical (PEC) cell methods have been used to characterise the material properties. In order to test and study the electronic device quality of the layers, ohmic and rectifying contacts were fabricated on the electroplated layers. Schottky barriers, formed on the layers were also compared with previously reported work on Chemical Bath Deposited CBD-CdS layers and bulk single crystals of CdS. Comparatively, Schottky diodes fabricated on electroplated CdS layers using two-electrode system and thiourea precursor exhibit excellent electronic properties suitable for electronic devices such as thin film solar panels and large area display devices. - Highlights: • Precipitate-free electrodeposition of CdS is achievable using Thiourea precursor. • Electrodeposition of CdS using 2-electrode configuration. • The electrodeposited CdS shows excellent electronic properties. • Exploration of the effect of heat treatment temperature and heat treatment duration.

  12. Methods for forming particles from single source precursors

    Science.gov (United States)

    Fox, Robert V [Idaho Falls, ID; Rodriguez, Rene G [Pocatello, ID; Pak, Joshua [Pocatello, ID

    2011-08-23

    Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

  13. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  14. Film: An Introduction.

    Science.gov (United States)

    Fell, John L.

    "Understanding Film," the opening section of this book, discusses perceptions of and responses to film and the way in which experiences with and knowledge of other media affect film viewing. The second section, "Film Elements," analyzes the basic elements of film: the use of space and time, the impact of editing, sound and color, and the effects…

  15. Film and History.

    Science.gov (United States)

    Schaber, Robin L.

    2002-01-01

    Provides an annotated bibliography of Web sites that focus on using film to teach history. Includes Web sites in five areas: (1) film and education; (2) history of cinema; (3) film and history resources; (4) film and women; and (5) film organizations. (CMK)

  16. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    International Nuclear Information System (INIS)

    Dabirian, Ali; Kuzminykh, Yury; Wagner, Estelle; Benvenuti, Giacomo; Rushworth, Simon; Hoffmann, Patrik

    2014-01-01

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb 2 (OEt) 10 does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt) 5 acts as an octahedral field completing entity and leads to Nb(OEt) 4 (dmae). We show that Nb(OEt) 4 (dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h −1 to values larger than 400 nm·h −1 can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt) 4 (dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt) 4 (dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an atomic layer deposition (ALD) process

  17. Molecular precursors for the phase-change material germanium-antimony-telluride, Ge{sub 2}Sb{sub 2}Te{sub 5} (GST)

    Energy Technology Data Exchange (ETDEWEB)

    Harmgarth, Nicole; Zoerner, Florian; Engelhardt, Felix; Edelmann, Frank T. [Chemisches Institut, Otto-von-Guericke-Universitaet Magdeburg (Germany); Liebing, Phil [Laboratorium fuer Anorganische Chemie, ETH Zuerich (Switzerland); Burte, Edmund P.; Silinskas, Mindaugas [Institut fuer Mikro- und Sensorsysteme, Otto-von-Guericke-Universitaet Magdeburg (Germany)

    2017-10-04

    This review provides an overview of the precursor chemistry that has been developed around the phase-change material germanium-antimony-telluride, Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). Thin films of GST can be deposited by employing either chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques. In both cases, the success of the layer deposition crucially depends on the proper choice of suitable molecular precursors. Previously reported processes mainly relied on simple alkoxides, alkyls, amides and halides of germanium, antimony, and tellurium. More sophisticated precursor design provided a number of promising new aziridinides and guanidinates. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. MMPM - Mars MetNet Precursor Mission

    Science.gov (United States)

    Harri, A.-M.; Schmidt, W.; Pichkhadze, K.; Linkin, V.; Vazquez, L.; Uspensky, M.; Polkko, J.; Genzer, M.; Lipatov, A.; Guerrero, H.; Alexashkin, S.; Haukka, H.; Savijarvi, H.; Kauhanen, J.

    2008-09-01

    We are developing a new kind of planetary exploration mission for Mars - MetNet in situ observation network based on a new semi-hard landing vehicle called the Met-Net Lander (MNL). The eventual scope of the MetNet Mission is to deploy some 20 MNLs on the Martian surface using inflatable descent system structures, which will be supported by observations from the orbit around Mars. Currently we are working on the MetNet Mars Precursor Mission (MMPM) to deploy one MetNet Lander to Mars in the 2009/2011 launch window as a technology and science demonstration mission. The MNL will have a versatile science payload focused on the atmospheric science of Mars. Detailed characterization of the Martian atmospheric circulation patterns, boundary layer phenomena, and climatology cycles, require simultaneous in-situ measurements by a network of observation posts on the Martian surface. The scientific payload of the MetNet Mission encompasses separate instrument packages for the atmospheric entry and descent phase and for the surface operation phase. The MetNet mission concept and key probe technologies have been developed and the critical subsystems have been qualified to meet the Martian environmental and functional conditions. Prototyping of the payload instrumentation with final dimensions was carried out in 2003-2006.This huge development effort has been fulfilled in collaboration between the Finnish Meteorological Institute (FMI), the Russian Lavoschkin Association (LA) and the Russian Space Research Institute (IKI) since August 2001. Currently the INTA (Instituto Nacional de Técnica Aeroespacial) from Spain is also participating in the MetNet payload development. To understand the behavior and dynamics of the Martian atmosphere, a wealth of simultaneous in situ observations are needed on varying types of Martian orography, terrain and altitude spanning all latitudes and longitudes. This will be performed by the Mars MetNet Mission. In addition to the science aspects the

  19. [Felice Fontana precursor of neurosciences (author's transl)].

    Science.gov (United States)

    Disertori, B; Piazza, M

    1981-01-01

    The A.A. insert the life and work of the naturalist and chemist Felice Fontana, born in Pomarolo (Trentino), in the frame of 18th century sciences, beside other great names of that century like Carolus Linnaeus, Réaumur, von Haller, Spallanzani, Morgagni, Priestley and Lavoisier. In the field of general biology, the discovery of nucleus and nucleolus and consequently the discovery of the eukaryotic cell, as we say in our days, in his, as well as the one of anabiosis. The A.A. enucleate and analyse the contributions of Fontana to the neurosciences; he has discovered the axon and the myelinic sheath half century before Remak and Purknije; he found out that the white matter of the brain is made of fibres alike those of nerves and the grey matter is made of globules (i.e. cells) mixed up with fibres; he discovered in the retina a part of coming out from the brain; he described the transversal bands of fibres of the skeletal muscles; he was the first to introduce into physiology the law of "all and nothing"; he attributed the irritability to the whole animal life; he identified the pupillar reflexes to the light, the reflex of accommodation, the consensual reflex, the psycho-emotive mydriasis and at last the myosis of sleep. He made experimental searches about nerves and recognised their regeneration, he enumerated various pathological intracranial masses, he made an important anatomopathological research about hydatid cyst in the brain of the sheep affected by "capostorno" and madness, he demonstrated their parasitical nature (he said that the hydated cysts were covered inside by small animals), he come out to formulate the hypothesis that some neuropsychiatric diseases of man can depend from similar aetiology. He declared that passions may have pathological effects (psyco-somatic aetiology), but he has also drawned the attention against the danager of aprioristical generalisation of neurogenical causes in all diseases. The A.A. give to Fontana the palm of precursor

  20. Biological Indicators in Studies of Earthquake Precursors

    Science.gov (United States)

    Sidorin, A. Ya.; Deshcherevskii, A. V.

    2012-04-01

    Time series of data on variations in the electric activity (EA) of four species of weakly electric fish Gnathonemus leopoldianus and moving activity (MA) of two cat-fishes Hoplosternum thoracatum and two groups of Columbian cockroaches Blaberus craniifer were analyzed. The observations were carried out in the Garm region of Tajikistan within the frameworks of the experiments aimed at searching for earthquake precursors. An automatic recording system continuously recorded EA and DA over a period of several years. Hourly means EA and MA values were processed. Approximately 100 different parameters were calculated on the basis of six initial EA and MA time series, which characterize different variations in the EA and DA structure: amplitude of the signal and fluctuations of activity, parameters of diurnal rhythms, correlated changes in the activity of various biological indicators, and others. A detailed analysis of the statistical structure of the total array of parametric time series obtained in the experiment showed that the behavior of all animals shows a strong temporal variability. All calculated parameters are unstable and subject to frequent changes. A comparison of the data obtained with seismicity allow us to make the following conclusions: (1) The structure of variations in the studied parameters is represented by flicker noise or even a more complex process with permanent changes in its characteristics. Significant statistics are required to prove the cause-and-effect relationship of the specific features of such time series with seismicity. (2) The calculation of the reconstruction statistics in the EA and MA series structure demonstrated an increase in their frequency in the last hours or a few days before the earthquake if the hypocenter distance is comparable to the source size. Sufficiently dramatic anomalies in the behavior of catfishes and cockroaches (changes in the amplitude of activity variation, distortions of diurnal rhythms, increase in the

  1. Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

    International Nuclear Information System (INIS)

    Pathan, H.M.; Lokhande, C.D.; Kulkarni, S.S.; Amalnerkar, D.P.; Seth, T.; Han, Sung-Hwan

    2005-01-01

    Indium sulphide (In 2 S 3 ) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In 2 S 3 thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study

  2. Effect of annealing atmosphere on optic-electric properties of Zn O thin films

    International Nuclear Information System (INIS)

    Bueno, C.; Pacio, M.; Juarez, H.; Osorio, E.; Perez, R.

    2017-01-01

    In this work the study of structural, morphologic characteristics, optical and electrical properties of the thin films of Zn O in temperatures and annealing atmospheres different was realized. The films were obtained by the sol-gel method, utilizing zinc acetate dihydrate as the precursor, monoethanolamine (Mea) as a stabilizing agent and 2-methoxyethanol as a solvent and deposited by spin-coating. The films were crystallized at 600, 800 and 1000 degrees Celsius in oxygen and nitrogen atmospheres. The results obtained by XRD, Sem, photoluminescence and Hall effects of the Zn O films were related and depend strongly on the temperature and atmosphere annealing. (Author)

  3. Effect of annealing atmosphere on optic-electric properties of Zn O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bueno, C. [Benemerita Universidad Autonoma de Puebla, Facultad de Ingenieria, Blvd. Valsequillo y Av. San Claudio s/n, 72570 Puebla (Mexico); Pacio, M.; Juarez, H. [Benemerita Universidad Autonoma de Puebla, Posgrado en Dispositivos Semiconductores, Av. San Claudio y 14 Sur, 72450 Puebla (Mexico); Osorio, E. [Universidad de Quinta Roo, Blvd. Bahia s/n, esquina Ignacio Comonfort, El Bosque, 77019 Chetumal, Quintana Roo (Mexico); Perez, R., E-mail: cba3009@gmail.com [Benemerita Universidad Autonoma de Puebla, Facultad de Ingenieria Quimica, Av. San Claudio y 18 Sur, 72570 Puebla (Mexico)

    2017-11-01

    In this work the study of structural, morphologic characteristics, optical and electrical properties of the thin films of Zn O in temperatures and annealing atmospheres different was realized. The films were obtained by the sol-gel method, utilizing zinc acetate dihydrate as the precursor, monoethanolamine (Mea) as a stabilizing agent and 2-methoxyethanol as a solvent and deposited by spin-coating. The films were crystallized at 600, 800 and 1000 degrees Celsius in oxygen and nitrogen atmospheres. The results obtained by XRD, Sem, photoluminescence and Hall effects of the Zn O films were related and depend strongly on the temperature and atmosphere annealing. (Author)

  4. Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

    Science.gov (United States)

    Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

    2010-09-01

    We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

  5. Nitrogen doping of ZnSe by OMVPE using a novel organometallic precursor

    International Nuclear Information System (INIS)

    Akram, S.; Bhat, I.B.; Melas, A.A.

    1994-01-01

    We have investigated phenylhydrazine (PhHz) as a potential nitrogen dopant source in organometallic vapor phase epitaxial growth of ZnSe. Dimethylzinc and dimethylselenide were the zinc and selenium precursors, respectively. Photoluminescence and secondary ion mass spectroscopy measurements indicate that high incorporation efficiency compared to ammonia can be achieved using this dopant source. For example, nitrogen incorporation in the 2.5 x 10 18 /cm -3 level was achieved at 350 degrees C under ultraviolet excitation when the PhHz partial pressure was 1 x 10 -8 atm. These layers had 1-2 x 10 15 /cm -3 electrically active acceptors. Films grown at higher partial pressures of PhHz were highly compensated. 9 refs., 5 figs

  6. Versatile High-Performance Regenerated Cellulose Membranes Prepared using Trimethylsilyl Cellulose as a Precursor

    KAUST Repository

    Puspasari, Tiara

    2018-05-01

    Cellulose has emerged as an indispensable membrane material due to its abundant availability, low cost, fascinating physiochemical properties and environment benignancy. However, it is believed that the potential of this polymer is not fully explored yet due to its insolubility in the common organic solvents, encouraging the use of derivatization-regeneration method as a viable alternative to the direct dissolution in exotic or reactive solvents. In this work, we use trimethylsilyl cellulose (TMSC), a highly soluble cellulose derivative, as a precursor for the fabrication of cellulose thin film composite membranes. TMSC is an attractive precursor to assemble thin cellulose films with good deposition behavior and film morphology; cumbersome solvents used in the one step cellulose processing are avoided. This derivative is prepared from cellulose by the known silylation reaction. The complete transformation of TMSC back into cellulose after the membrane formation is carried out by vapor-phase acid treatment, which is simple, scalable and reproducible. This process along with the initial TMSC concentration determines the membrane sieving characteristics. Unlike the typical regenerated cellulose membranes with meso- or macropores, membranes regenerated from TMSC display micropores suitable for the selective separation of nanomolecules in aqueous and organic solvent nanofiltration. The membranes introduced in this thesis represent the first polymeric membranes ever reported for highly selective separation of similarly sized small organic molecules based on charge and size differences with outstanding fluxes. Owing to its strong hydrophilic and amorphous character, the membranes also demonstrate excellent air-dehumidification performance as compared to previously reported thin film composite membranes. Moreover, the use of TMSC enables the creation of the previously unfeasible cellulose–polydimethylsiloxane (PDMS) and cellulose–polyethyleneimine (PEI) blend membranes

  7. Physical properties of chemical vapour deposited nanostructured carbon thin films

    International Nuclear Information System (INIS)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H.; Rajpure, K.Y.

    2011-01-01

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C 10 H 16 )' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp 3 bonds with diamond phase and less for SS shows graphitization effect with dominant sp 2 bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  8. The proliferative human monocyte subpopulation contains osteoclast precursors

    Science.gov (United States)

    Lari, Roya; Kitchener, Peter D; Hamilton, John A

    2009-01-01

    Introduction Immediate precursors of bone-resorbing osteoclasts are cells of the monocyte/macrophage lineage. Particularly during clinical conditions showing bone loss, it would appear that osteoclast precursors are mobilized from bone marrow into the circulation prior to entering tissues undergoing such loss. The observed heterogeneity of peripheral blood monocytes has led to the notion that different monocyte subpopulations may have special or restricted functions, including as osteoclast precursors. Methods Human peripheral blood monocytes were sorted based upon their degree of proliferation and cultured in macrophage colony-stimulating factor (M-CSF or CSF-1) and receptor activator of nuclear factor-kappa-B ligand (RANKL). Results The monocyte subpopulation that is capable of proliferation gave rise to significantly more multinucleated, bone-resorbing osteoclasts than the bulk of the monocytes. Conclusions Human peripheral blood osteoclast precursors reside in the proliferative monocyte subpopulation. PMID:19222861

  9. Synthesis of beta alumina from aluminum hydroxide and oxyhydroxide precursors

    CSIR Research Space (South Africa)

    Van Zyl, A

    1993-02-01

    Full Text Available Two aluminium oxyhydroxides, boehmite and pseudoboehmite, and two aluminium hydroxides, bayerite and gibbsite, have been investigated as precursors for the synthesis of the solid electrolyte, beta alumina. Reaction pathways and products have been...

  10. Are any public-reported earthquake precursors valid?

    Directory of Open Access Journals (Sweden)

    N. E. Whitehead

    2004-01-01

    Full Text Available This article examines retrospective public-supplied precursor reports statistically, and confirms published hypotheses that some alleged precursors within 100km and within a day prior to the large 1995 Kobe and 1999 Izmit earthquakes, may be valid. The confirmations are mostly at the p<0.001 level of significance. Most significant were alleged meteorological and geophysical precursors, and less often, animal reports. The chi-squared test used, for the first time eliminates the distorting effects of psychological factors on the reports. However it also shows that correct reports are diluted with about the same number which are merely wishful thinking, and obtaining more reliable data would be logistically difficult. Some support is found for another published hypothesis in which other precursors occurred within the ten days prior to the earthquake.

  11. N-Nitroso Compound Precursors in some Nigerian Forage Crops ...

    African Journals Online (AJOL)

    N-Nitroso Compound Precursors in some Nigerian Forage Crops. ... were analyzed as their sulphonamides by gas chromatography interfaced with a chemiluminescence detector-Thermal Energy Analyzer modified for use in nitrogen mode.

  12. Unconsumed precursors and couplers after formation of oxidative hair dyes

    DEFF Research Database (Denmark)

    Rastogi, Suresh Chandra; Søsted, Heidi; Johansen, Jeanne Duus

    2006-01-01

    Contact allergy to hair dye ingredients, especially precursors and couplers, is a well-known entity among consumers having hair colouring done at home or at a hairdresser. The aim of the present investigation was to estimate consumer exposure to some selected precursors (p-phenylenediamine, toluene......-2,5-diamine) and couplers (3-aminophenol, 4-aminophenol, resorcinol) of oxidative hair dyes during and after hair dyeing. Concentrations of unconsumed precursors and couplers in 8 hair dye formulations for non-professional use were investigated, under the conditions reflecting hair dyeing. Oxidative...... hair dye formation in the absence of hair was investigated using 6 products, and 2 products were used for experimental hair dyeing. In both presence and absence of hair, significant amounts of unconsumed precursors and couplers remained in the hair dye formulations after final colour development. Thus...

  13. Strong Flux Pinning of Nano-Sized Ysz Particles in Ybco Films Prepared by Mod Method

    Science.gov (United States)

    Ye, S.; Suo, H. L.; Liu, M.; Tang, X.; Wu, Z. P.; Zhao, Y.; Zhou, M. L.

    The YBCO films with doped YSZ nanoparticles have been prepared successfully by metal organic doepositon method using trifluoroacetates (TFA-MOD) through dissolving Zr organic salt into the YBCO precursor solution. The doped films have well in-plane and out-plane textures detected by both XRD Φ-scan and ω-scan. The YSZ nanoparticles with the size of about 5 ~ 15 nm were observed on the surface of the YBCO films using both FE-SEM and TEM. By comparing the superconducting properties, it was found that the doped YBCO films had lower Tc than that of undoped YBCO films. However, as increasing the applied magnetic field, Jc of the doped YBCO films were much better than that of undoped one. The Jc was as higher as 2.5 times than that of undoped YBCO film at 77 K and 1 T applied field.

  14. Dye film dosimetry for radiation processing

    International Nuclear Information System (INIS)

    Humphreys, J.C.; McLaughlin, W.L.

    1981-01-01

    Commercially available plastic films containing dyes or dye precursors are convenient dosimeters and imaging media for electron beams or photons used for industrial radiation processing. As ''grainless'' imaging systems having thicknesses down to a few micrometers, they provide high spatial resolution for determining detailed absorbed dose distributions through microdensitometric analysis. The radiation absorption properties of these systems are adjusted by changing film composition so that the dosimeter materials can be made to simulate the material of interest undergoing irradiation. Other advantages include long-term stability, dose-rate independence, and ease of use and calibration. Radiochromic dye films with thicknesses varying from 0.005 to 1 mm are presently used to monitor electron-beam or gamma-ray doses from 10 to 10 5 Gy (10 3 to 10 7 rad), typical of those encountered in medical applications, radiation curing of polymeric composites, wire and cable insulation, shrinkable plastic tubing and film, as well as sterilization of medical supplies and treatment of municipal and industrial wastes. An NBS calibration service to industry involves the traceability of standard 60 Co gamma ray absorbed dose measurements by means of these films employed as transfer standards

  15. Optimizing a multifunctional microsphere scaffold to improve neural precursor cell transplantation for traumatic brain injury repair.

    Science.gov (United States)

    Skop, Nolan B; Calderon, Frances; Cho, Cheul H; Gandhi, Chirag D; Levison, Steven W

    2016-10-01

    Tissue engineering using stem cells is widely used to repair damaged tissues in diverse biological systems; however, this approach has met with less success in regenerating the central nervous system (CNS). In this study we optimized and characterized the surface chemistry of chitosan-based scaffolds for CNS repair. To maintain radial glial cell (RGC) character of primitive neural precursors, fibronectin was adsorbed to chitosan. The chitosan was further modified by covalently linking heparin using genipin, which then served as a linker to immobilize fibroblast growth factor-2 (FGF-2), creating a multifunctional film. Fetal rat neural precursors plated onto this multifunctional film proliferated and remained multipotent for at least 3 days without providing soluble FGF-2. Moreover, they remained less mature and more highly proliferative than cells maintained on fibronectin-coated substrates in culture medium supplemented with soluble FGF-2. To create a vehicle for cell transplantation, a 3% chitosan solution was electrosprayed into a coagulation bath to generate microspheres (range 30-100 µm, mean 64 µm) that were subsequently modified. Radial glial cells seeded onto these multifunctional microspheres proliferated for at least 7 days in culture and the microspheres containing cells were small enough to be injected, using 23 Gauge Hamilton syringes, into the brains of adult rats that had previously sustained cortical contusion injuries. When analysed 3 days later, the transplanted RGCs were positive for the stem cell/progenitor marker Nestin. These results demonstrate that this multifunctional scaffold can be used as a cellular and growth factor delivery vehicle for the use in developing cell transplantation therapies for traumatic brain injuries. Copyright © 2013 John Wiley & Sons, Ltd. Copyright © 2013 John Wiley & Sons, Ltd.

  16. Rapid, cool sintering of wet processed yttria-stabilized zirconia ceramic electrolyte thin films

    OpenAIRE

    Park, Jun-Sik; Kim, Dug-Joong; Chung, Wan-Ho; Lim, Yonghyun; Kim, Hak-Sung; Kim, Young-Beom

    2017-01-01

    Here we report a photonic annealing process for yttria-stabilized zirconia films, which are one of the most well-known solid-state electrolytes for solid oxide fuel cells (SOFCs). Precursor films were coated using a wet-chemical method with a simple metal-organic precursor solution and directly annealed at standard pressure and temperature by two cycles of xenon flash lamp irradiation. The residual organics were almost completely decomposed in the first pre-annealing step, and the fluorite cr...

  17. SEARCH FOR PRECURSOR ERUPTIONS AMONG TYPE IIB SUPERNOVAE

    Energy Technology Data Exchange (ETDEWEB)

    Strotjohann, Nora L.; Ofek, Eran O.; Gal-Yam, Avishay; Yaron, Ofer [Benoziyo Center for Astrophysics, Weizmann Institute of Science, 76100 Rehovot (Israel); Sullivan, Mark [School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom); Kulkarni, Shrinivas R.; Cao, Yi [Cahill Center for Astronomy and Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Shaviv, Nir J. [School of Natural Sciences, Institute for Advanced Study, 1 Einstein Drive, Princeton, NJ 08540 (United States); Fremling, Christoffer; Sollerman, Jesper [The Oskar Klein Centre, Department of Astronomy, Stockholm University, AlbaNova, SE-10691 Stockholm (Sweden); Kasliwal, Mansi M. [Observatories of the Carnegie Institution for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Nugent, Peter E. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Arcavi, Iair [Las Cumbres Observatory Global Telescope Network, 6740 Cortona Drive, Suite 102, Goleta, CA 93111 (United States); Filippenko, Alexei V. [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Laher, Russ; Surace, Jason [Spitzer Science Center, California Institute of Technology, M/S 314-6, Pasadena, CA 91125 (United States)

    2015-10-01

    The progenitor stars of several Type IIb supernovae (SNe) show indications of extended hydrogen envelopes. These envelopes might be the outcome of luminous energetic pre-explosion events, so-called precursor eruptions. We use the Palomar Transient Factory (PTF) pre-explosion observations of a sample of 27 nearby SNe IIb to look for such precursors during the final years prior to the SN explosion. No precursors are found when combining the observations in 15-day bins, and we calculate the absolute-magnitude-dependent upper limit on the precursor rate. At the 90% confidence level, SNe IIb have on average <0.86 precursors as bright as an absolute R-band magnitude of −14 in the final 3.5 years before the explosion and <0.56 events over the final year. In contrast, precursors among SNe IIn have a ≳5 times higher rate. The kinetic energy required to unbind a low-mass stellar envelope is comparable to the radiated energy of a few-weeks-long precursor that would be detectable for the closest SNe in our sample. Therefore, mass ejections, if they are common in such SNe, are radiatively inefficient or have durations longer than months. Indeed, when using 60-day bins, a faint precursor candidate is detected prior to SN 2012cs (∼2% false-alarm probability). We also report the detection of the progenitor of SN 2011dh that does not show detectable variability over the final two years before the explosion. The suggested progenitor of SN 2012P is still present, and hence is likely a compact star cluster or an unrelated object.

  18. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  19. Structured nanoporous surfaces from hybrid block copolymer micelle films with metal ions

    International Nuclear Information System (INIS)

    Kim, Minsoo P; Yi, Gi-Ra; Kim, Hyeong Jun; Kim, Bumjoon J

    2015-01-01

    We present a novel method for producing structured nanoporous thin films using block copolymer (BCP) micelles loaded with metallic ions. The BCP micellar thin films containing gold (Au) ions were prepared by spin-coating poly(styrene-block-4-vinylpyridine) (PS-b-P4VP) micelle solutions in which Au precursors (AuCl 4 − ) were selectively loaded onto the P4VP core. When the micellar films were exposed to cetyltrimethylammonium bromide (CTAB) solutions, the Au precursors were selectively extracted from the P4VP domains due to their strong electrostatic interaction with CTAB, leading to the formation of pores in the micelles. Consequently, regularly patterned nanoporous surfaces were formed. By controlling the molecular weight (M n ) of PS-b-P4VP and the amount of Au precursors (λ) that were loaded in the P4VP domains, the pore size and depth could be tuned precisely. In particular, when a sufficient amount of Au precursors was loaded (λ  ≥ 0.3), the porous surface nanostructure was well developed. In addition, the pore size and depth of the nanostructure increased as the λ value increased. For instance, when the λ value increased from 0.3 to 1.0, the pore size increased from 22.8 nm to 28.8 nm, and the pore depth increased from 2.1 nm to 3.2 nm. Interestingly, the transition from the nonporous structures to the porous structures in the micellar film could be reversibly controlled by adding and removing the Au precursors in the film. Moreover, our method for the preparation of nanoporous films can be extended to micellar film by incorporating other metal ions such as silver (Ag) and iron (Fe). (paper)

  20. Film Noir Style Genealogy

    OpenAIRE

    Rietuma, Dita

    2012-01-01

    Annotation for the Doctoral Work Film Noir Style Genealogy (The Genealogy of the Film Noir Style) The doctoral work topic Film Noir Style Genealogy encompasses traditionally approved world film theory views on the concept of film noir and its related cinematographic heritage, and an exploration of its evolution and distinctive style, including – the development of film noir in the USA, Europe, and also in Latvia, within the context of both socio-political progression and the paradigm of m...

  1. Elements of the tsunami precursors' detection physics

    Science.gov (United States)

    Novik, Oleg; Ruzhin, Yuri; Ershov, Sergey; Volgin, Max; Smirnov, Fedor

    ionosphere from the buoy, balloon and satellite complexes. The balloon and buoy complexes will transmit data to a shore station over satellite link. The frequency ranges and sensitivity thresholds of all of the sensors of the LOAMS will be adapted to the characteristics of expected seismic signals according to the numerical research above. Computational methods and statistical analysis (e.g. seismic changes of coherence of spatially distributed sensors of different nature) of the recorded multidimensional time series will be used for prognostic interpretation. The multilevel recordings will provide a stable noise (e.g. ionosphere Pc pulsations, hard sea, industry) and seismic event detection. An intensive heat flow typical for tectonically active lithosphere zones may be considered as an energy source for advanced modifications of the LOAMS. The latter may be used as a warning system for continental and marine technologies, e.g. a sea bottom geothermal energy production. Indeed, seismic distraction of the nuclear power station Fukushima I demonstrates that similar technology hardly is able to solve the energy problems in seismically active regions. On the other hand, the LOAMS may be considered as a scientific observatory for development of the seaquake/tsunami precursor physics, i.e. seismo-hydro-electromagnetics.

  2. Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

    International Nuclear Information System (INIS)

    Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

    2014-01-01

    In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

  3. C-Ni-Pd and CNT-Ni-Pd film's molecular and crystalline structure investigations by FTIR spectroscopy and XRD diffraction

    Science.gov (United States)

    Stepińska, Izabela; Czerwosz, ElŻbieta; Diduszko, Ryszard; Kozłowski, Mirosław; Wronka, Halina

    2017-08-01

    In this work molecular and crystalline structure of new type of nanocomposite films were investigated. These films compose of CNT decorated with palladium nanograins. They were prepared on a base of C-Ni films modified in CVD process. C-Ni nanocomposite films were obtained by PVD process and their modification by CVD leads to a growth of CNT film. CNTs-Ni or C-Ni films were treated with additional PVD process with palladium. Nickel and palladium acetate and fulleren C60 are precursors of films in PVD process. FTIR spectroscopy was used to studied the molecular structure of film in every stage of preparation . The crystalline structure of these films was studied by X-ray diffraction. SEM (scanning electron microscopy) was applied to investigate film's surface topography.

  4. Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

    Science.gov (United States)

    Belkhedkar, M. R.; Ubale, A. U.

    2018-05-01

    Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

  5. Phase Composition of Samarium Niobate and Tantalate Thin Films Prepared by Sol-Gel Method

    Science.gov (United States)

    Bruncková, H.; Medvecký, Ľ.; Múdra, E.; Kovalčiková, A.; Ďurišin, J.; Šebek, M.; Girman, V.

    2017-12-01

    Samarium niobate SmNbO4 (SNO) and tantalate SmTaO4 (STO) thin films ( 100 nm) were prepared by sol-gel/spin-coating process on alumina substrates with PZT interlayer and annealing at 1000°C. The precursors of films were synthesized using Nb or Ta tartrate complexes. The improvement of the crystallinity of monoclinic M'-SmTaO4 phase via heating was observed through the coexistence of small amounts of tetragonal T-SmTa7O19 phase in STO precursor at 1000°C. The XRD results of SNO and STO films confirmed monoclinic M-SmNbO4 and M'-SmTaO4 phases, respectively, with traces of orthorhombic O-SmNbO4 (in SNO). In STO film, the single monoclinic M'-SmTaO4 phase was revealed. The surface morphology and topography of thin films were investigated by SEM and AFM analysis. STO film was smoother with roughness 3.2 nm in comparison with SNO (6.3 nm). In the microstructure of SNO film, small spherical ( 50 nm) and larger cuboidal particles ( 100 nm) of the SmNbO4 phase were observed. In STO, compact clusters composed of fine spherical SmTaO4 particles ( 20-50 nm) were found. Effect of samarium can contribute to the formation different polymorphs of these films for the application to environmental electrolytic thin film devices.

  6. Sol-gel reaction stability studied: Influence in the formation temperature and properties of ferroelectric thin films

    International Nuclear Information System (INIS)

    Perez, J.; Vilarinho, P.M.; Kholkin, A.L.; Almeida, A.

    2009-01-01

    Lead zirconium titanate (PZT) sol-gel solutions were prepared based on distilled lead acetate precursor solutions. A detailed analysis of the distillation effect on the lead precursor and the final PZT solution were carried out by Infrared and Raman techniques. It was found that the increase in the number of distillation steps experienced by the lead precursor solutions removes the constitutional water and increases the lead acetate-2-methoxyethanol interconnectivity; thus improving stability and avoiding the aging effect of the resulting PZT solutions. The thermal decomposition process of the PZT solutions was analyzed based on the thermogravimetric (TG) and differential thermogravimetric analysis (DTA) measurements. It was found that as the number of distillation steps in the lead precursor solutions increases, the decomposition rate increases and the formation temperature of pure perovskite PZT films decreases. X-ray diffraction (XRD) technique was used to study the film phase formation. A pure perovskite phase at 500 deg. C was found by the XRD analysis after the second distillation step. Scanning electron microscope technique was used to carry out the microstructural analysis. Dense microstructure was found in all analyzed films and an incipient columnar grain growth was revealed in PZT films prepared based on lead precursor solution with more than three distillation steps. The dependence of the dielectric, ferroelectric and piezoelectric properties on the number of distillation steps was revealed and a correlation between the distillation process, film microstructure properties and electrical performance was established

  7. Kinetics of evaporation of barium THD precursors used for organometallic chemical vapor deposition (OMCVD) thin films

    Science.gov (United States)

    Burtman, V.; Schieber, M.; Yitzchaik, S.; Yaroslavsky, Y.

    1997-04-01

    Various methods have been used to synthesize Ba(THD) 2 and its molecular structure has been studied using nuclear magnetic resonance. Compared with Raman and infrared spectroscopy it was found that NMR is very useful to determine quantitatively the decomposition through aging of Ba(THD) 2. The transport kinetics of Ba(THD) 2 has been studied under experimental conditions of a OMCVD reactor. It has been found that the freshly prepared Ba(THD) 2 by the reaction of Ba metal with THD ligand in anhydrous conditions with subsequent crystallization from methanol transported quantitatively without decomposition. A simple model shows that the transport kinetics corresponds to a diffusion controlled process.

  8. Analytical solutions for the profile of two-dimensional droplets with finite-length precursor films

    Science.gov (United States)

    Perazzo, Carlos Alberto; Mac Intyre, J. R.; Gomba, J. M.

    2017-12-01

    By means of the lubrication approximation we obtain the full family of static bidimensional profiles of a liquid resting on a substrate under partial-wetting conditions imposed by a disjoining-conjoining pressure. We show that for a set of quite general disjoining-conjoining pressure potentials, the free surface can adopt only five nontrivial static patterns; in particular, we find solutions when the height goes to zero which describe satisfactorily the complete free surface for a finite amount of fluid deposited on a substrate. To test the extension of the applicability of our solutions, we compare them with those obtained when the lubrication approximations are not employed and under conditions where the lubrication hypothesis are not strictly valid, and also with axisymmetric solutions. For a given disjoining-conjoining potential, we report a new analytical solution that accounts for all the five possible solutions.

  9. Method for fabrication of crack-free ceramic dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

    2017-12-05

    The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

  10. Method for fabrication of crack-free ceramic dielectric films

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan; Narayanan, Manoj

    2014-02-11

    The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

  11. Direct Electrospray Printing of Gradient Refractive Index Chalcogenide Glass Films.

    Science.gov (United States)

    Novak, Spencer; Lin, Pao Tai; Li, Cheng; Lumdee, Chatdanai; Hu, Juejun; Agarwal, Anuradha; Kik, Pieter G; Deng, Weiwei; Richardson, Kathleen

    2017-08-16

    A spatially varying effective refractive index gradient using chalcogenide glass layers is printed on a silicon wafer using an optimized electrospray (ES) deposition process. Using solution-derived glass precursors, IR-transparent Ge 23 Sb 7 S 70 and As 40 S 60 glass films of programmed thickness are fabricated to yield a bilayer structure, resulting in an effective gradient refractive index (GRIN) film. Optical and compositional analysis tools confirm the optical and physical nature of the gradient in the resulting high-optical-quality films, demonstrating the power of direct printing of multimaterial structures compatible with planar photonic fabrication protocols. The potential application of such tailorable materials and structures as they relate to the enhancement of sensitivity in chalcogenide glass based planar chemical sensor device design is presented. This method, applicable to a broad cross section of glass compositions, shows promise in directly depositing GRIN films with tunable refractive index profiles for bulk and planar optical components and devices.

  12. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  13. Photocatalysis of zinc oxide nanotip array/titanium oxide film heterojunction prepared by aqueous solution deposition

    Science.gov (United States)

    Lee, Ming-Kwei; Lee, Bo-Wei; Kao, Chen-Yu

    2017-05-01

    A TiO2 film was prepared on indium tin oxide (ITO)/glass by aqueous solution deposition (ASD) with precursors of ammonium hexafluoro-titanate and boric acid at 40 °C. The photocatalysis of annealed TiO2 film increases with increasing growth time and decreases with increasing growth times longer than 60 min. A ZnO nanotip array was prepared on ZnO seed layer/TiO2 film/glass by aqueous solution deposition with precursors of zinc nitrate and ammonium hydroxide at 70 °C. The photocatalysis of ASD-ZnO/ASD-TiO2 film/ITO glass can be better than that of P25.

  14. Characteristics of zinc oxide nanorod array/titanium oxide film heterojunction prepared by aqueous solution deposition

    Science.gov (United States)

    Lee, Ming-Kwei; Hong, Min-Hsuan; Li, Bo-Wei

    2016-07-01

    The characteristics of a ZnO nanorod array/TiO2 film heterojunction were investigated. A TiO2 film was prepared on glass by aqueous solution deposition with precursors of ammonium hexafluorotitanate and boric acid at 40 °C. Then, a ZnO seed layer was prepared on a TiO2 film/glass substrate by RF sputtering. A vertically oriented ZnO nanorod array was grown on a ZnO seed layer/TiO2 film/glass substrate by aqueous solution deposition with precursors of zinc nitrate and hexamethylenetetramine (HMT) at 70 °C. After thermal annealing in N2O ambient at 300 °C, this heterojunction used as an oxygen gas sensor shows much better rise time, decay time, and on/off current ratio than as-grown and annealed ZnO nanorods.

  15. Deposition studies and coordinated characterization of MOCVD YBCO films on IBAD-MgO templates

    International Nuclear Information System (INIS)

    Aytug, T; Paranthaman, M; Heatherly, L; Zuev, Y; Zhang, Y; Kim, K; Goyal, A; Maroni, V A; Chen, Y; Selvamanickam, V

    2009-01-01

    A recently installed research-scale metal-organic chemical vapor deposition (MOCVD) system at Oak Ridge National Laboratory, provided by SuperPower, Inc., has been used to investigate processing variables for MOCVD YBCO precursors and trends in the resulting properties. Systematic studies of YBCO film growth on LaMnO 3 /IBAD-MgO templates were carried out by optimizing deposition temperature and oxygen flow rate. Microstructural and superconducting properties of the YBCO films were analyzed by x-ray diffraction, scanning electron microscopy and transport measurements. The identification of intermediate phases formed during the YBCO precursor transformation was investigated by coordinated reel-to-reel Raman microprobe analysis. With this combination of various characterization techniques, an improved understanding of the growth characteristics of MOCVD YBCO films was established. Finally, critical current densities greater than 2 MA cm -2 for film thicknesses of 0.8 μm were demonstrated.

  16. Deposition studies and coordinated characterization of MOCVD YBCO films on IBAD-MgO templates

    Energy Technology Data Exchange (ETDEWEB)

    Aytug, T; Paranthaman, M [Oak Ridge National Laboratory, Chemical Sciences Division, Oak Ridge, TN 37831 (United States); Heatherly, L; Zuev, Y; Zhang, Y; Kim, K; Goyal, A [Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831 (United States); Maroni, V A [Argonne National Laboratory, Chemical Sciences and Engineering Division, Argonne, IL 60439 (United States); Chen, Y; Selvamanickam, V [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States)], E-mail: aytugt@ornl.gov

    2009-01-15

    A recently installed research-scale metal-organic chemical vapor deposition (MOCVD) system at Oak Ridge National Laboratory, provided by SuperPower, Inc., has been used to investigate processing variables for MOCVD YBCO precursors and trends in the resulting properties. Systematic studies of YBCO film growth on LaMnO{sub 3}/IBAD-MgO templates were carried out by optimizing deposition temperature and oxygen flow rate. Microstructural and superconducting properties of the YBCO films were analyzed by x-ray diffraction, scanning electron microscopy and transport measurements. The identification of intermediate phases formed during the YBCO precursor transformation was investigated by coordinated reel-to-reel Raman microprobe analysis. With this combination of various characterization techniques, an improved understanding of the growth characteristics of MOCVD YBCO films was established. Finally, critical current densities greater than 2 MA cm{sup -2} for film thicknesses of 0.8 {mu}m were demonstrated.

  17. Rapid, cool sintering of wet processed yttria-stabilized zirconia ceramic electrolyte thin films.

    Science.gov (United States)

    Park, Jun-Sik; Kim, Dug-Joong; Chung, Wan-Ho; Lim, Yonghyun; Kim, Hak-Sung; Kim, Young-Beom

    2017-09-29

    Here we report a photonic annealing process for yttria-stabilized zirconia films, which are one of the most well-known solid-state electrolytes for solid oxide fuel cells (SOFCs). Precursor films were coated using a wet-chemical method with a simple metal-organic precursor solution and directly annealed at standard pressure and temperature by two cycles of xenon flash lamp irradiation. The residual organics were almost completely decomposed in the first pre-annealing step, and the fluorite crystalline phases and good ionic conductivity were developed during the second annealing step. These films showed properties comparable to those of thermally annealed films. This process is much faster than conventional annealing processes (e.g. halogen furnaces); a few seconds compared to tens of hours, respectively. The significance of this work includes the treatment of solid-state electrolyte oxides for SOFCs and the demonstration of the feasibility of other oxide components for solid-state energy devices.

  18. Contemporary Films' Mini Course on Film Study.

    Science.gov (United States)

    Schillaci, Peter

    This minicourse on film study can be a unit in English, in arts, or in the humanities. It can help to launch a film study course or complement an introduction to theater. Whatever form it takes, it helps to build a bridge to the student's media environment. Part one, the language of images, utilizes four films which demonstrate the basic elements…

  19. The Evolution of Film: Rethinking Film Studies

    OpenAIRE

    Harbord, Janet P.

    2007-01-01

    How is film changing? What does it do, and what do we do with it? This book examines the reasons why we should be studying film in the twenty-first century, connecting debates from philosophy, anthropology and new media with historical concerns of film studies.

  20. TEM characterization of nanodiamond thin films.

    Energy Technology Data Exchange (ETDEWEB)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  1. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    International Nuclear Information System (INIS)

    Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

    2014-01-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

  2. Thermoluminescent behavior of diamond thin films exposed to ultraviolet radiation

    International Nuclear Information System (INIS)

    Barboza F, M.; Gastelum, S.; Melendrez, R.; Chernov, V.; Bernal, R.; Cruz V, C.; Brown, F.

    2002-01-01

    In this work the thermoluminescent properties of diamond thin films are discussed which are grown up through the chemical vapor method exposed to ultraviolet radiation of 200-280 nm. The films with thickness 3, 6, 9, 12, 180 and 500 microns were grown up using a precursor gas formed of H 2 -CH 4 -CO excited through microwave energy or hot filament.The structure and morphology of the films were examined through scanning electron microscopy, indicating the formation of different diamond polycrystal structures which depend on the type of heating of the precursor gas used as well as the film dimensions. In general, the brilliance curve depends on the sample and the wavelength of the irradiation ultraviolet light, however it presents clearly thermoluminescence bands in 148, 160, 272, 304, 320 and 324 C degrees. The maximum of the thermoluminescence efficiency is obtained for the case of sample exposure with light of 214 nm. The sample of 500 microns is what exhibits greater thermoluminescent efficiency of those studied samples. The thermoluminescent behavior in function of radiation dose presents regions of linearity and supra linearity for higher and small doses respectively. The disappearance of the thermoluminescent signal depends on the characteristics of the film and it can reach until a 30 % of loss before to reach the stability. (Author)

  3. Efficient Planar Structured Perovskite Solar Cells with Enhanced Open-Circuit Voltage and Suppressed Charge Recombination Based on a Slow Grown Perovskite Layer from Lead Acetate Precursor.

    Science.gov (United States)

    Li, Cong; Guo, Qiang; Wang, Zhibin; Bai, Yiming; Liu, Lin; Wang, Fuzhi; Zhou, Erjun; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

    2017-12-06

    For planar structured organic-inorganic hybrid perovskite solar cells (PerSCs) with the poly(3,4-ethylenedioxythiophene:polystyrene sulfonate) (PEDOT:PSS) hole transport layer, the open-circuit voltage (V oc ) of the device is limited to be about 1.0 V, resulting in inferior performance in comparison with TiO 2 -based planar counterparts. Therefore, increasing V oc of the PEDOT:PSS-based planar device is an important way to enhance the efficiency of the PerSCs. Herein, we demonstrate a novel approach for perovskite film formation and the film is formed by slow growth from lead acetate precursor via a one-step spin-coating process without the thermal annealing (TA) process. Because the perovskite layer grows slowly and naturally, high-quality perovskite film can be achieved with larger crystalline particles, less defects, and smoother surface morphology. Ultraviolet absorption, X-ray diffraction, scanning electron microscopy, steady-state fluorescence spectroscopy (photoluminescence), and time-resolved fluorescence spectroscopy are used to clarify the crystallinity, morphology, and internal defects of perovskite thin films. The power conversion efficiency of p-i-n PerSCs based on slow-grown film (16.33%) shows greatly enhanced performance compared to that of the control device based on traditional thermally annealed perovskite film (14.33%). Furthermore, the V oc of the slow-growing device reaches 1.12 V, which is 0.1 V higher than that of the TA device. These findings indicate that slow growth of the perovskite layer from lead acetate precursor is a promising approach to achieve high-quality perovskite film for high-performance PerSCs.

  4. Gold film-catalysed benzannulation by Microwave-Assisted, Continuous Flow Organic Synthesis (MACOS

    Directory of Open Access Journals (Sweden)

    Gjergji Shore

    2009-07-01

    Full Text Available Methodology has been developed for laying down a thin gold-on-silver film on the inner surface of glass capillaries for the purpose of catalysing benzannulation reactions. The cycloaddition precursors are flowed through these capillaries while the metal film is being heated to high temperatures using microwave irradiation. The transformation can be optimized rapidly, tolerates a wide number of functional groups, is highly regioselective, and proceeds in good to excellent conversion.

  5. Tuneable light-emitting carbon-dot/polymer flexible films prepared through one-pot synthesis

    Science.gov (United States)

    Bhunia, Susanta Kumar; Nandi, Sukhendu; Shikler, Rafi; Jelinek, Raz

    2016-02-01

    Development of efficient, inexpensive, and environmentally-friendly light emitters, particularly devices that produce white light, have drawn intense interest due to diverse applications in the lighting industry, photonics, solar energy, and others. We present a simple strategy for the fabrication of flexible transparent films exhibiting tuneable light emission through one-pot synthesis of polymer matrixes with embedded carbon dots assembled in situ. Importantly, different luminescence colours were produced simply by preparing C-dot/polymer films using carbon precursors that yielded C-dots exhibiting distinct fluorescence emission profiles. Furthermore, mixtures of C-dot precursors could be also employed for fabricating films exhibiting different colours. In particular, we successfully produced films emitting white light with attractive properties (i.e. ``warm'' white light with a high colour rendering index) - a highly sought after goal in optical technologies.Development of efficient, inexpensive, and environmentally-friendly light emitters, particularly devices that produce white light, have drawn intense interest due to diverse applications in the lighting industry, photonics, solar energy, and others. We present a simple strategy for the fabrication of flexible transparent films exhibiting tuneable light emission through one-pot synthesis of polymer matrixes with embedded carbon dots assembled in situ. Importantly, different luminescence colours were produced simply by preparing C-dot/polymer films using carbon precursors that yielded C-dots exhibiting distinct fluorescence emission profiles. Furthermore, mixtures of C-dot precursors could be also employed for fabricating films exhibiting different colours. In particular, we successfully produced films emitting white light with attractive properties (i.e. ``warm'' white light with a high colour rendering index) - a highly sought after goal in optical technologies. Electronic supplementary information (ESI

  6. Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Rekha, E-mail: rekha.mittal07@gmail.com; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

    2016-05-06

    Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

  7. Structural and optical properties of nano-structured CdS thin films prepared by chemical bath deposition

    International Nuclear Information System (INIS)

    Bai, Rekha; Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

    2016-01-01

    Cadmium sulfide (CdS) thin films have been deposited on conducting glass substrates by chemical bath deposition (CBD) technique. The effect of precursor concentration on the structural, morphological, compositional, and optical properties of the CdS films has been studied. Crystal structure of these CdS films is characterized by X-ray diffraction (XRD) and it reveals polycrystalline structure with mixture of cubic and wurtzite phases with grain size decreasing as precursor concentration is increased. Optical studies reveal that the CdS thin films have high transmittance in visible spectral region reaching 90% and the films possess direct optical band gap that decreases from 2.46 to 2.39 eV with decreasing bath concentration. Our study suggests that growth is nucleation controlled.

  8. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  9. Additive to regulate the perovskite crystal film growth in planar heterojunction solar cells

    International Nuclear Information System (INIS)

    Song, Xin; Sun, Po; Chen, Zhi-Kuan; Wang, Weiwei; Ma, Wanli

    2015-01-01

    We reported a planar heterojunction perovskite solar cell fabricated from MAPbI 3−x Cl x perovskite precursor solution containing 1-chloronaphthalene (CN) additive. The MAPbI 3−x Cl x perovskite films have been characterized by UV-vis, SEM, XRD, and steady-state photoluminescence (PL). UV-vis absorption spectra measurement shows that the absorbance of the film with CN additive is significantly higher than the pristine film and the absorption peak is red shift by 30 nm, indicating the perovskite film with additive possessing better crystal structures. In-situ XRD study of the perovskite films with additive demonstrated intense diffraction peaks from MAPbI 3−x Cl x perovskite crystal planes of (110), (220), and (330). SEM images of the films with additive indicated the films were more smooth and homogenous with fewer pin-holes and voids and better surface coverage than the pristine films. These results implied that the additive CN is beneficial to regulate the crystallization transformation kinetics of perovskite to form high quality crystal films. The steady-state PL measurement suggested that the films with additive contained less charge traps and defects. The planar heterojunction perovskite solar cells fabricated from perovskite precursor solution containing CN additive demonstrated 30% enhancement in performance compared to the devices with pristine films. The improvement in device efficiency is mainly attributed to the good crystal structures, more homogenous film morphology, and also fewer trap centers and defects in the films with the additive

  10. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

    Science.gov (United States)

    Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2018-01-09

    Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as precursors. The In 2 O 3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (E g ) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In 2 O 3 , and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In 2 O 3 thin-film transistors with an Al 2 O 3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm 2 /V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10 7 . This was ascribed to passivation of oxygen vacancies in the device channel.

  11. Synthesis of zinc sulfide by chemical vapor deposition using an organometallic precursor: Di-tertiary-butyl-disulfide

    International Nuclear Information System (INIS)

    Vasekar, Parag; Dhakal, Tara; Ganta, Lakshmikanth; Vanhart, Daniel; Desu, Seshu

    2012-01-01

    Zinc sulfide has gained popularity in the last few years as a cadmium-free heterojunction partner for thin film solar cells and is seen as a good replacement for cadmium sulfide due to better blue photon response and non-toxicity. In this work, zinc sulfide films are prepared using an organic sulfur source. We report a simple and repeatable process for development of zinc sulfide using a cost-effective and less hazardous organic sulfur source. The development of zinc sulfide has been studied on zinc oxide-coated glass where the zinc oxide is converted into zinc sulfide. Zinc oxide grown by atomic layer deposition as well as commercially available zinc oxide-coated glass was used. The zinc sulfide synthesis has been studied and the films are characterized using scanning electron microscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and a UV–VIS spectrophotometer. XRD, XPS and optical characterization confirm the zinc sulfide phase formation. - Highlights: ► Synthesis of ZnS using a less-hazardous precursor, di-tertiary-butyl-disulfide. ► ZnS process optimized for two types of ZnO films. ► Preliminary results for a solar cell show an efficiency of 1.09%.

  12. Cryopreservation of GABAergic Neuronal Precursors for Cell-Based Therapy.

    Directory of Open Access Journals (Sweden)

    Daniel Rodríguez-Martínez

    Full Text Available Cryopreservation protocols are essential for stem cells storage in order to apply them in the clinic. Here we describe a new standardized cryopreservation protocol for GABAergic neural precursors derived from the medial glanglionic eminence (MGE, a promising source of GABAergic neuronal progenitors for cell therapy against interneuron-related pathologies. We used 10% Me2SO as cryoprotectant and assessed the effects of cell culture amplification and cellular organization, as in toto explants, neurospheres, or individualized cells, on post-thaw cell viability and retrieval. We confirmed that in toto cryopreservation of MGE explants is an optimal preservation system to keep intact the interneuron precursor properties for cell transplantation, together with a high cell viability (>80% and yield (>70%. Post-thaw proliferation and self-renewal of the cryopreserved precursors were tested in vitro. In addition, their migration capacity, acquisition of mature neuronal morphology, and potency to differentiate into multiple interneuron subtypes were also confirmed in vivo after transplantation. The results show that the cryopreserved precursor features remained intact and were similar to those immediately transplanted after their dissection from the MGE. We hope this protocol will facilitate the generation of biobanks to obtain a permanent and reliable source of GABAergic precursors for clinical application in cell-based therapies against interneuronopathies.

  13. Fluid Mechanics of Lean Blowout Precursors in Gas Turbine Combustors

    Directory of Open Access Journals (Sweden)

    T. M. Muruganandam

    2012-03-01

    Full Text Available Understanding of lean blowout (LBO phenomenon, along with the sensing and control strategies could enable the gas turbine combustor designers to design combustors with wider operability regimes. Sensing of precursor events (temporary extinction-reignition events based on chemiluminescence emissions from the combustor, assessing the proximity to LBO and using that data for control of LBO has already been achieved. This work describes the fluid mechanic details of the precursor dynamics and the blowout process based on detailed analysis of near blowout flame behavior, using simultaneous chemiluminescence and droplet scatter observations. The droplet scatter method represents the regions of cold reactants and thus help track unburnt mixtures. During a precursor event, it was observed that the flow pattern changes significantly with a large region of unburnt mixture in the combustor, which subsequently vanishes when a double/single helical vortex structure brings back the hot products back to the inlet of the combustor. This helical pattern is shown to be the characteristic of the next stable mode of flame in the longer combustor, stabilized by double helical vortex breakdown (VBD mode. It is proposed that random heat release fluctuations near blowout causes VBD based stabilization to shift VBD modes, causing the observed precursor dynamics in the combustor. A complete description of the evolution of flame near the blowout limit is presented. The description is consistent with all the earlier observations by the authors about precursor and blowout events.

  14. Adenine nucleotide translocator transports haem precursors into mitochondria.

    Directory of Open Access Journals (Sweden)

    Motoki Azuma

    2008-08-01

    Full Text Available Haem is a prosthetic group for haem proteins, which play an essential role in oxygen transport, respiration, signal transduction, and detoxification. In haem biosynthesis, the haem precursor protoporphyrin IX (PP IX must be accumulated into the mitochondrial matrix across the inner membrane, but its mechanism is largely unclear. Here we show that adenine nucleotide translocator (ANT, the inner membrane transporter, contributes to haem biosynthesis by facilitating mitochondrial accumulation of its precursors. We identified that haem and PP IX specifically bind to ANT. Mitochondrial uptake of PP IX was inhibited by ADP, a known substrate of ANT. Conversely, ADP uptake into mitochondria was competitively inhibited by haem and its precursors, suggesting that haem-related porphyrins are accumulated into mitochondria via ANT. Furthermore, disruption of the ANT genes in yeast resulted in a reduction of haem biosynthesis by blocking the translocation of haem precursors into the matrix. Our results represent a new model that ANT plays a crucial role in haem biosynthesis by facilitating accumulation of its precursors into the mitochondrial matrix.

  15. The stream of precursors that colonizes the thymus proceeds selectively through the early T lineage precursor stage of T cell development

    Science.gov (United States)

    Benz, Claudia; Martins, Vera C.; Radtke, Freddy; Bleul, Conrad C.

    2008-01-01

    T cell development in the thymus depends on continuous colonization by hematopoietic precursors. Several distinct T cell precursors have been identified, but whether one or several independent precursor cell types maintain thymopoiesis is unclear. We have used thymus transplantation and an inducible lineage-tracing system to identify the intrathymic precursor cells among previously described thymus-homing progenitors that give rise to the T cell lineage in the thymus. Extrathymic precursors were not investigated in these studies. Both approaches show that the stream of T cell lineage precursor cells, when entering the thymus, selectively passes through the early T lineage precursor (ETP) stage. Immigrating precursor cells do not exhibit characteristics of double-negative (DN) 1c, DN1d, or DN1e stages, or of populations containing the common lymphoid precursor 2 (CLP-2) or the thymic equivalent of circulating T cell progenitors (CTPs). It remains possible that an unknown hematopoietic precursor cell or previously described extrathymic precursors with a CLP, CLP-2, or CTP phenotype feed into T cell development by circumventing known intrathymic T cell lineage progenitor cells. However, it is clear that of the known intrathymic precursors, only the ETP population contributes significant numbers of T lineage precursors to T cell development. PMID:18458114

  16. Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

    2014-04-01

    The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

  17. Film quality in film mammography. Pt. 2

    International Nuclear Information System (INIS)

    Friedrich, M.; Weskamp, P.; Freie Univ. Berlin

    1976-01-01

    During consideration of three film mammographic systems, the concept of signal/noise ratio is developed as a quantitative measure of film quality. The ability to recognise detail related to detail size, film blackening and exposure geometry was studied for various systems, and the quality profiles are discussed. There is a considerable difference in quality between industrial films without screens and film-screen combinations; however, exposure geometry during mammography has a considerable effect which tends to reduce the difference. Consequently, detail sizes of 200 μ to 1,000 μ (including the majority of mammographic micro-calcifications) are shown about equally well. Contrast for the lo-dose system is somewhat less than for adequately exposed industrial film. Over-exposure with the lo-dose system, contrary to industrial film, rapidly leads to unsatisfactory results. On the other hand it is often not possible to obtain an adequate exposure when using industrial film. For these reasons it is often an advantage to examine large breasts and the dense breasts of young women with a film-screen combination which requires approximately one eighth of the dose necessary for industrial film. For small or easily compressable breasts best results are obtained, using an adequate exposure by employing industril film; radiation dose it then acceptable. (orig./ORU) [de

  18. Uniformly irradiated polymer film

    International Nuclear Information System (INIS)

    Fowler, S.L.

    1979-01-01

    Irradiated film having substantial uniformity in the radiation dosage profile is produced by irradiating the film within a trough having lateral deflection blocks disposed adjacent the film edges for deflecting electrons toward the surface of the trough bottom for further deflecting the electrons toward the film edge

  19. Deposition and characteristics of PbS thin films by an in-situ solution chemical reaction process

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Junna; Ji, Huiming; Wang, Jian; Zheng, Xuerong; Lai, Junyun; Liu, Weiyan; Li, Tongfei [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China); Ma, Yuanliang; Li, Haiqin; Zhao, Suqin [College of Physics and Electronic Information Engineering, Qinghai University for Nationalities, Xining 810007 (China); Jin, Zhengguo, E-mail: zhgjin@tju.edu.cn [School of Materials Science and Engineering, Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072 (China)

    2015-09-01

    Preferential oriented and uniform PbS thin films were deposited by a room temperature in-situ solution chemical reaction process, in which the lead nitrate as precursor in a form of thin solid films from lead precursor solution was used to react with ammonium sulfide ethanol solution. Influence of 1-butanol addition in the lead precursor solution, Pb:S molar ratios in the separate cationic and anionic solutions, deposition cycle numbers and annealing treatment in Ar atmosphere on structure, morphology, chemical composition and optical absorption properties of the deposited PbS films were investigated based on X-ray diffraction, field emission scanning electron microscopy, energy dispersive spectrometer, atomic force microscopy, selected area electron diffraction, UV–vis, near infrared ray and fourier transform infrared spectroscopy measurements. The results showed that the deposited PbS thin films had a cubic structure and highly preferred orientation along with the plane (100). The deposition rate of single-layer was stable, about 30 nm in thickness per deposition cycle. - Highlights: • Time-efficiency synthetic method for the preparation of lead sulfide (PbS) films • Effect of 1-butanol addition into cationic precursor solution is discussed. • Growth rate of the PbS films is stable at about 30 nm per cycle.

  20. Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

    Science.gov (United States)

    Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

    2018-03-14

    We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

  1. Films and dark room

    International Nuclear Information System (INIS)

    Abdul Nassir Ibrahim; Azali Muhammad; Ab. Razak Hamzah; Abd. Aziz Mohamed; Mohamad Pauzi Ismail

    2008-01-01

    After we know where the radiographic come from, then we must know about the film and also dark room. So, this chapter 5 discusses the two main components for radiography work that is film and dark room, places to process the film. Film are structured with three structured that are basic structured, emulsion and protection structured. So, this film can be classified either with their speed, screen and standard that used. The process to wash the film must be done in dark room otherwise the radiographer cannot get what are they inspected. The processing of film will be discussed briefly in next chapter.

  2. Characterizations of maghemite thin films prepared by a sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Lau, L. N., E-mail: lau7798@gmail.com; Ibrahim, N. B., E-mail: baayah@ukm.edu.my [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor. Malaysia (Malaysia)

    2015-09-25

    Iron is one of the abundant elements of Mother Nature and its compound, iron oxide is an interesting material to study since its discovery in the form of magnetite. It can exist in many phases such as hematite and maghemite, this unique nature has put it as a potential candidate in various applications. The aim of this work is to study the influence of different precursor concentrations on the microstructural and magnetic properties of iron oxide thin film. All samples were prepared via the sol-gel method followed by a spin coating technique on quartz substrates. Iron oxide films were confirmed as maghemite phase from X-ray diffraction patterns. The film morphology was examined by a field emission scanning electron microscope and it showed non-systematic value of average grain size and film thickness throughout the study. Hysteresis loop further confirmed that maghemite is a magnetic material when it was characterized by a vibrating sample magnetometer. The coercivity did not show any correlation with molarity. Nevertheless, it increased as the precursor concentration of the film increased due to the domain behaviour. In conclusion, maghemite thin films were successfully synthesized by the sol-gel method with different precursor concentrations in this work.

  3. Mott-Schottky analysis of thin ZnO films

    International Nuclear Information System (INIS)

    Windisch, Charles F. Jr.; Exarhos, Gregory J.

    2000-01-01

    Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

  4. PARTITIONING TUNGSTEN BETWEEN MATRIX PRECURSORS AND CHONDRULE PRECURSORS THROUGH RELATIVE SETTLING

    Energy Technology Data Exchange (ETDEWEB)

    Hubbard, Alexander, E-mail: ahubbard@amnh.org [American Museum of Natural History, New York, NY (United States)

    2016-08-01

    Recent studies of chondrites have found a tungsten isotopic anomaly between chondrules and matrix. Given the refractory nature of tungsten, this implies that W was carried into the solar nebula by at least two distinct families of pre-solar grains. The observed chondrule/matrix split requires that the distinct families were kept separate during the dust coagulation process, and that the two families of grain interacted with the chondrule formation mechanism differently. We take the co-existence of different families of solids in the same general orbital region at the chondrule-precursor size as given, and explore the requirements for them to have interacted with the chondrule formation process at significantly different rates. We show that this sorting of families of solids into chondrule- and matrix-destined dust had to have been at least as powerful a sorting mechanism as the relative settling of aerodynamically distinct grains at least two scale heights above the midplane. The requirement that the chondrule formation mechanism was correlated in some fashion with a dust-grain sorting mechanism argues strongly for spatially localized chondrule formation mechanisms such as turbulent dissipation in non-thermally ionized disk surface layers, and argues against volume-filling mechanisms such as planetesimal bow shocks.

  5. PARTITIONING TUNGSTEN BETWEEN MATRIX PRECURSORS AND CHONDRULE PRECURSORS THROUGH RELATIVE SETTLING

    International Nuclear Information System (INIS)

    Hubbard, Alexander

    2016-01-01

    Recent studies of chondrites have found a tungsten isotopic anomaly between chondrules and matrix. Given the refractory nature of tungsten, this implies that W was carried into the solar nebula by at least two distinct families of pre-solar grains. The observed chondrule/matrix split requires that the distinct families were kept separate during the dust coagulation process, and that the two families of grain interacted with the chondrule formation mechanism differently. We take the co-existence of different families of solids in the same general orbital region at the chondrule-precursor size as given, and explore the requirements for them to have interacted with the chondrule formation process at significantly different rates. We show that this sorting of families of solids into chondrule- and matrix-destined dust had to have been at least as powerful a sorting mechanism as the relative settling of aerodynamically distinct grains at least two scale heights above the midplane. The requirement that the chondrule formation mechanism was correlated in some fashion with a dust-grain sorting mechanism argues strongly for spatially localized chondrule formation mechanisms such as turbulent dissipation in non-thermally ionized disk surface layers, and argues against volume-filling mechanisms such as planetesimal bow shocks.

  6. Low-temperature Synthesis of Tin(II) Oxide From Tin(II) ketoacidoximate Precursor

    KAUST Repository

    Alshankiti, Buthainah

    2015-04-01

    Sn (II) oxide finds numerous applications in different fields such as thin film transistors1, solar cells2 and sensors.3 In this study we present the fabrication of tin monoxide SnO by using Sn (II) ketoacid oximate complexes as precursors. Tin (II) ketoacidoximates of the type [HON=CRCOO]2Sn where R= Me 1, R= CH2Ph 2, and [(MeON=CMeCOO)3Sn]- NH4 +.2H2O 3 were synthesized by in situ formation of the ketoacid oximate ligand. The crystal structures were determined via single crystal X- ray diffraction of the complexes 1-3 revealed square planar and square pyramidal coordination environments for the Sn atom. Intramolecular hydrogen bonding is observed in all the complexes. Furthermore, the complexes were characterized by Infrared (IR), Nuclear Magnetic Resonance (NMR) and elemental analysis. From thermogravimetric analysis of 1-3, it was found that the complexes decomposed in the range of 160 – 165 oC. Analysis of the gases evolved during decomposition indicated complete loss of the oximato ligand in one step and the formation of SnO. Spin coating of 1 on silicon or glass substrate show uniform coating of SnO. Band gaps of SnO films were measured and found to be in the range of 3.0 – 3.3 eV by UV-Vis spectroscopy. X-ray photoelectron spectroscopy indicated surface oxidation of the SnO film. Heating 1 above 140 oC in air gives SnO of size ranging from 10 – 500 nm and is spherical in shape. The SnO nanomaterial is characterized by powder X-ray diffraction(XRD), Raman spectroscopy, Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM).

  7. Application of precursor methodology in initiating frequency estimates

    International Nuclear Information System (INIS)

    Kohut, P.; Fitzpatrick, R.G.

    1991-01-01

    The precursor methodology developed in recent years provides a consistent technique to identify important accident sequence precursors. It relies on operational events (extracting information from actual experience) and infers core damage scenarios based on expected safety system responses. The ranking or categorization of each precursor is determined by considering the full spectrum of potential core damage sequences. The methodology estimates the frequency of severe core damage based on the approach suggested by Apostolakis and Mosleh, which may lead to a potential overestimation of the severe-accident sequence frequency due to the inherent dependencies between the safety systems and the initiating events. The methodology is an encompassing attempt to incorporate most of the operating information available from nuclear power plants and is an attractive tool from the point of view of risk management. In this paper, a further extension of this methodology is discussed with regard to the treatment of initiating frequency of the accident sequences

  8. Early postradiation recovery of precursor cells of hemopoietic stroma

    International Nuclear Information System (INIS)

    Todriya, T.V.

    1984-01-01

    Ability of stroma precursor cells to early postradiation recovery was studied in male mices using the method of fraction irradiation of bone marrow. Donor mices of bone marrow were irradiated in vivo once by the total dose (nonfraction irradiation) and fractionally with 6 h interval between two irradiation doses. The cumulative irradiation doses equal to 10, 12, 14, 16 Gr were investigated. Irradiation was carried out using gamma facility. Bone marrow of the femur was implanted immediately after irradiation under kidney capsule of nonirradiated syngeneic recipient. The ability of stroma precursor cells to intracellular repair (repair index) was evaluated according to the ratio of the number of hemopoietic cells formed in heterotropic transplants in groups with fraction irradiation to the same one in groups with nonfraction irradiation. The obtained results testify to the fact that slowly regenerated highly radioresistant population of precursor cells of hemopoietic stroma is capable to early postradiation recovery

  9. Influence of flow rate on different properties of diamond-like nanocomposite thin films grown by PECVD

    Directory of Open Access Journals (Sweden)

    T. S. Santra

    2012-06-01

    Full Text Available Diamond-like nanocomposite (DLN thin films were deposited on pyrex glass substrate using different flow rate of haxamethyldisiloxane (HMDSO based liquid precursor with nitrogen gas as a glow discharged decomposition by plasma enhanced chemical vapor deposition (PECVD technique. The significant influence of different precursor flow rates on refractive index and thickness of the DLN films was measured by using spectroscopic filmatrics and DEKTAK profilometer. Optical transparency of the DLN thin films was analyzed by UV-VIS-NIR spectrometer. FTIR spectroscopy, provides the information about shifted bonds like SiC2, Si-C, Si-O, C-C, Si-H, C-H, N-H, and O-H with different precursor flow rate. We have estimated the hardness of the DLN films from Raman spectroscopy using Gaussian deconvolution method and tried to investigate the correlation between hardness, refractive index and thickness of the films with different precursor flow rates. The composition and surface morphology of the DLN films were investigated by X-ray photo electron spectroscopy (XPS and atomic force microscopy (AFM respectively. We have analyzed the hardness by intensity ratio (ID/IG of D and G peaks and correlates with hardness measurement by nanoindentation test where hardness increases from 27.8 μl/min to 80.6μl/min and then decreases with increase of flow rate from 80.6μl/min to 149.5μl/min. Finally, we correlates different parameters of structural, optical and tribological properties like film-thickness, refractive index, light transmission, hardness, surface roughness, modulus of elasticity, contact angle etc. with different precursor flow rates of DLN films.

  10. Comparison of chemical solution deposition systems for the fabrication of lead zirconate titanate thin films

    International Nuclear Information System (INIS)

    Lecarpentier, F.; Daglish, M.; Kemmitt, T.

    2001-01-01

    Ferroelectric thin films of lead zirconate titanate Pb(Zr x Ti 1-x )O 3 (PZT) were prepared from five chemical solution deposition (CSD) systems, namely methoxyethanol, citrate, diol, acetic acid and triethanolamine. Physical characteristics of the solutions, processing parameters and physical and electrical properties of the films were used to assess the relative advantages and disadvantages of the different chemical systems. All the CSD systems decomposed to produce single phase perovskite PZT at temperatures above 650 deg C. Thin film deposition was influenced by the specific characteristics of each system such as wetting on the substrate and viscosity. Distinct precursor effects on the thin film crystallinity and electrical performance were revealed. The diol route yielded films with the highest crystallite size, highest permittivity and lowest loss tangent. The relative permittivity exhibited by films made by the other routes were 25% to 35% lower at equivalent thicknesses. Copyright (2001) The Australian Ceramic Society

  11. Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

    Science.gov (United States)

    Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

    2014-01-01

    Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

  12. Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Siqin; Yue, Zhenxing, E-mail: yuezhx@tsinghua.edu.cn; Zhang, Xiaozhi; Li, Longtu

    2014-01-30

    Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

  13. Preparation and characterization of ZnO films by modified SILAR method

    International Nuclear Information System (INIS)

    Zhang Ling; Liu Jie; Hou Mingdong; Sun Youmei; Duan Jinlai; Yao Huijun; Mo Dan; Chen Yanfeng

    2009-01-01

    A modified solution method, successive ionic layer adsorption and reaction(SILAR), was applied to prepare transparent zinc oxide(ZnO) film on glass substrate at (125±5) degree C in mixed ion precursor solution. The surface morphology and crystallization of films were analyzed by field emission scanning microscopy (FESEM) and X-ray diffraction(XRD), respectively. The optical properties of the films were studied by ultraviolet visible(UV-Vis)spectroscopy. The results show that the obtained samples are polycrystalline films of hexagonal wurtzite structure, with the preference of [002] orientation. The as-deposited films exhibit uniform and compact surface morphology, with the film thickness of 550 nm, and have high transmittance in the visible band(>80%). (authors)

  14. Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

    Science.gov (United States)

    Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

    2018-06-01

    Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

  15. Hemopoietic precursor cell regeneration following irradiation and syngeneic marrow transplantation

    Energy Technology Data Exchange (ETDEWEB)

    Melchner, H. von

    1983-01-01

    The transplantation of hemopoietic cells into adequately pretreated recipients represents one of the most promising approaches in the treatment of immunohematological disorders such as aplastic anemia, immunodeficiency diseases, leukemias and malignant lymphomas. The basic property of the hemopoietic cells permitting such therapeutic procedure, namely, the capacity of hemopoietic precursors to actively proliferate and differentiate in recipients suffering the consequences of various kinds of hemopoietic failure, represents the subject of the present review. The main cell populations addressed in the subsequent sections are the hemopoietic precursor cells. Mature end cells and in particular lymphocytes did not receive as much attention.

  16. IL-9-Producing Mast Cell Precursors and Food Allergy

    Science.gov (United States)

    2017-10-01

    AWARD NUMBER: W81XWH-15-1-0517 TITLE: IL-9-Producing Mast Cell Precursors and Food Allergy PRINCIPAL INVESTIGATOR: Dr. Simon P. Hogan PhD...IL-9-Producing Mast Cell Precursors and Food Allergy 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Yui Hsi Wang, Sunil...threatening anaphylaxis. We have identified a novel multi-functional IL-9-producing mucosal mast cells (MMC9s) that produce large amounts of IL-9, IL

  17. Do glycine-extended hormone precursors have clinical significance?

    DEFF Research Database (Denmark)

    Rehfeld, Jens Frederik

    2014-01-01

    Half of the known peptide hormones are C-terminally amidated. Subsequent biogenesis studies have shown that the immediate precursor is a glycine-extended peptide. The clinical interest in glycine-extended hormones began in 1994, when it was suggested that glycine-extended gastrin stimulated cancer...... and clinical effects of glycine-extended precursors for most other amidated hormones than gastrin and cholecystokinin (CCK). The idea of glycine-extended peptides as independent messengers was interesting. But clinical science has to move ahead from ideas that cannot be supported at key points after decades...

  18. Differentiation of Mouse Embryonic Stem Cells into Ventral Foregut Precursors

    DEFF Research Database (Denmark)

    Rothová, Michaela; Hölzenspies, Jurriaan J; Livigni, Alessandra

    2016-01-01

    Anterior definitive endoderm (ADE), the ventral foregut precursor, is both an important embryonic signaling center and a unique multipotent precursor of liver, pancreas, and other organs. Here, a method is described for the differentiation of mouse embryonic stem cells (mESCs) to definitive...... endoderm with pronounced anterior character. ADE-containing cultures can be produced in vitro by suspension (embryoid body) culture or in a serum-free adherent monolayer culture. ESC-derived ADE cells are committed to endodermal fates and can undergo further differentiation in vitro towards ventral foregut...

  19. Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

    2009-11-15

    Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

  20. Deposition and Characterization of Thin Films on Metallic Substrates

    Science.gov (United States)

    Gatica, Jorge E.

    2005-01-01

    A CVD method was successfully developed to produce conversion coatings on aluminum alloys surfaces with reproducible results with a variety of precursors. A well defined protocol to prepare the precursor solutions formulated in a previous research was extended to other additives. It was demonstrated that solutions prepared following such a protocol could be used to systematically generate protective coatings onto aluminum surfaces. Experiments with a variety of formulations revealed that a refined deposition protocol yields reproducible conversion coatings of controlled composition. A preliminary correlation between solution formulations and successful precursors was derived. Coatings were tested for adhesion properties enhancement for commercial paints. A standard testing method was followed and clear trends were identified. Only one precursors was tested systematically. Anticipated work on other precursors should allow a better characterization of the effect of intermetallics on the production of conversion/protective coatings on metals and ceramics. The significance of this work was the practical demonstration that chemical vapor deposition (CVD) techniques can be used to systematically generate protective/conversion coating on non-ferrous surfaces. In order to become an effective approach to replace chromate-based pre- treatment processes, namely in the aerospace or automobile industry, the process parameters must be defined more precisely. Moreover, the feasibility of scale-up designs necessitates a more comprehensive characterization of the fluid flow, transport phenomena, and chemical kinetics interacting in the process. Kinetic characterization showed a significantly different effect of magnesium-based precursors when compared to iron-based precursors. Future work will concentrate on refining the process through computer simulations and further experimental studies on the effect of other transition metals to induce deposition of conversion/protective films

  1. Aqueous metal–organic solutions for YSZ thin film inkjet deposition

    DEFF Research Database (Denmark)

    Gadea, Christophe; Hanniet, Q.; Lesch, A.

    2017-01-01

    Inkjet printing of 8% Y2O3-stabilized ZrO2 (YSZ) thin films is achieved by designing a novel water-based reactive ink for Drop-on-Demand (DoD) inkjet printing. The ink formulation is based on a novel chemical strategy that consists of a combination of metal oxide precursors (zirconium alkoxide...

  2. Thin films of conductive ZnO patterned by micromolding resulting in nearly isolated features

    NARCIS (Netherlands)

    Göbel, Ole; Blank, David H.A.; ten Elshof, Johan E.

    2010-01-01

    Patterned and continuous thin films of conductive Al-doped zinc oxide (ZnO:Al) were prepared on different substrates from a polymeric precursor solution. Their electric conductivity and light transmittance (for visible and UV light) was measured at room temperature. By means of a simple device,

  3. Structural, optical and electrical properties of ZnO thin films prepared ...

    Indian Academy of Sciences (India)

    Administrator

    of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical pro- perties has ... dependence of photoresponse properties of sprayed ZnO thin films on ... randomly oriented flake-like grains. The grains ...

  4. Development of Strontium Titanate Thin films on Technical Substrates for Superconducting Coated Conductors

    DEFF Research Database (Denmark)

    Pallewatta, Pallewatta G A P; Yue, Zhao; Grivel, Jean-Claude

    2012-01-01

    SrTiO3 is a widely studied perovskite material due to its advantages as a template for high temperature superconducting tapes. Heteroepitaxial SrTiO3 thin films were deposited on Ni/W tapes using dip-coating in a precursor solution followed by drying and annealing under reducing conditions. Nearl...

  5. Study of optical characteristics of tin oxide thin film prepared by sol

    Indian Academy of Sciences (India)

    –gel process. The film was synthesized on a glass (Corning 7059) plate by dip coating method. Here, we used tin (II) chloride as precursor and methanol as solvent. Optical characteristics and physical properties like refractive index, absorption ...

  6. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Science.gov (United States)

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  7. Highly Enhanced Raman Scattering on Carbonized Polymer Films.

    Science.gov (United States)

    Yoon, Jong-Chul; Hwang, Jongha; Thiyagarajan, Pradheep; Ruoff, Rodney S; Jang, Ji-Hyun

    2017-06-28

    We have discovered a carbonized polymer film to be a reliable and durable carbon-based substrate for carbon enhanced Raman scattering (CERS). Commercially available SU8 was spin coated and carbonized (c-SU8) to yield a film optimized to have a favorable Fermi level position for efficient charge transfer, which results in a significant Raman scattering enhancement under mild measurement conditions. A highly sensitive CERS (detection limit of 10 -8 M) that was uniform over a large area was achieved on a patterned c-SU8 film and the Raman signal intensity has remained constant for 2 years. This approach works not only for the CMOS-compatible c-SU8 film but for any carbonized film with the correct composition and Fermi level, as demonstrated with carbonized-PVA (poly(vinyl alcohol)) and carbonized-PVP (polyvinylpyrollidone) films. Our study certainly expands the rather narrow range of Raman-active material platforms to include robust carbon-based films readily obtained from polymer precursors. As it uses broadly applicable and cheap polymers, it could offer great advantages in the development of practical devices for chemical/bio analysis and sensors.

  8. Initial color development in radiochromic dye films after a short intense pulse of accelerated electrons

    International Nuclear Information System (INIS)

    Uribe, R.M.; Barcelo, M.; Rios, J.; McLaughlin, W.L.; Buenfil, A.E.

    1990-01-01

    The radiation response of different dye precursors in several host plastics has been investigated after a single short-pulse irradiation with 2.5-MeV electrons. It was observed that in most films the radiation-initiated color development proceeds mainly during the first 300 seconds, after such high dose-rate irradiation (∼ 10 12 Gy/s). Absorption spectra show that the main absorption band increases at the expense of a shorter-wavelength precursor absorption band, showing an isosbestic point approximately midway bwetwen the two absorption bands. It was found that a certain combination of dye precursor and host plastic (namely a polyamide containing an aromatic group) constitutes a film which shows a very fast increase in optical density of the main absorption band, making it suitable for immediate dosimetric analysis in very high dose-rate installations. (author)

  9. Evaporation temperature-tuned physical vapor deposition growth engineering of one-dimensional non-Fermi liquid tetrathiofulvalene tetracyanoquinodimethane thin films

    DEFF Research Database (Denmark)

    Sarkar, I.; Laux, M.; Demokritova, J.

    2010-01-01

    We describe the growth of high quality tetrathiofulvalene tetracyanoquinodimethane (TTF-TCNQ) organic charge-transfer thin films which show a clear non-Fermi liquid behavior. Temperature dependent angle resolved photoemission spectroscopy and electronic structure calculations show that the growth...... of TTF-TCNQ films is accompanied by the unfavorable presence of neutral TTF and TCNQ molecules. The quality of the films can be controlled by tuning the evaporation temperature of the precursor in physical vapor deposition method....

  10. Effect of Graphene-EC on Ag NW-Based Transparent Film Heaters: Optimizing the Stability and Heat Dispersion of Films.

    Science.gov (United States)

    Cao, Minghui; Wang, Minqiang; Li, Le; Qiu, Hengwei; Yang, Zhi

    2018-01-10

    To optimize the performance of silver nanowire (Ag NW) film heaters and explore the effect of graphene on a film, we introduced poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) and graphene modified with ethyl cellulose (graphene-EC) into the film. The high-quality and well-dispersed graphene-EC was synthesized from graphene obtained by electrochemical exfoliation as a precursor. The transparent film heaters were fabricated via spin-coating. With the assistance of graphene-EC, the stability of film heaters was greatly improved, and the conductivity was optimized by adjusting the Ag NW concentration. The film heaters exhibited a fast and accurate response to voltage, accompanied by excellent environmental endurance, and there was no significant performance degradation after being operated for a long period of time. These results indicate that graphene-EC plays a crucial role in optimizing film stability and heat dispersion in the film. The Ag NW/PEDOT:PSS-doped graphene-EC film heaters show a great potential in low-cost indium-tin-oxide-free flexible transparent electrodes, heating systems, and transparent film heaters.

  11. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2014-01-01

    Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

  12. MgO thin films deposited by electrostatic spray pyrolysis for protecting layers in AC-plasma display panel

    CERN Document Server

    Kim, S G

    1999-01-01

    MgO thin films were deposited on SiO sub 2 (100) substrates by using electrostatic spray pyrolysis and Mg(tmhd) sub 2 as the precursor. The growth rates of the films varyed from 34 to 87 A/min and were measured for various substrate and guide temperatures. X-ray diffraction analysis provide evidence that the MgO films deposited at temperatures as low as 400 approx 500 .deg. C had preferred orientation to (100) plane perpendicular to the substrate surface. X-ray photoelectron spectroscopy and Auger electron spectroscopy data indicated that there were few organics incorporated in the films.

  13. Developmental Dyslexia: Early Precursors, Neurobehavioral Markers, and Biological Substrates

    Science.gov (United States)

    Benasich, April A., Ed.; Fitch, R. Holly, Ed.

    2012-01-01

    Understanding the precursors and early indicators of dyslexia is key to early identification and effective intervention. Now there's a single research volume that brings together the very latest knowledge on the earliest stages of dyslexia and the diverse genetic, neurobiological, and cognitive factors that may contribute to it. Based on findings…

  14. Development of precursors recognition methods in vector signals

    Science.gov (United States)

    Kapralov, V. G.; Elagin, V. V.; Kaveeva, E. G.; Stankevich, L. A.; Dremin, M. M.; Krylov, S. V.; Borovov, A. E.; Harfush, H. A.; Sedov, K. S.

    2017-10-01

    Precursor recognition methods in vector signals of plasma diagnostics are presented. Their requirements and possible options for their development are considered. In particular, the variants of using symbolic regression for building a plasma disruption prediction system are discussed. The initial data preparation using correlation analysis and symbolic regression is discussed. Special attention is paid to the possibility of using algorithms in real time.

  15. High regioselective acetylation of vitamin A precursors using lipase ...

    African Journals Online (AJOL)

    Administrator

    2011-09-26

    Sep 26, 2011 ... High regioselective acetylation of vitamin A precursors using lipase B from Candida antarctica in organic media. Jingpeng Sun, Keju Jing* and Yinghua Lu. Department of Chemical and Biochemical Engineering, College of Chemistry and Chemical Engineering, Xiamen. University, Xiamen 361005, P. R. ...