WorldWideScience

Sample records for hfsion dielectric films

  1. Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Xu Gao-Bo; Xu Qiu-Xia

    2009-01-01

    This paper presents a method using simple physical vapour deposition to form high-quality hafnium silicon oxyni-tride (HfSiON) on ultrathin SiO2 buffer layer. The gate dielectric with 10A (1/A = 0.1 nm) equivalent oxide thickness is obtained. The experimental results indicate that the prepared HfSiON gate dielectric exhibits good physical and electrical characteristics, including very good thermal stability up to 1000℃, excellent interface properties, high dielec-tric constant (k = 14) and low gate-leakage current (Ig= 1.9×10-3 A/cm2@Vg = Vfb-1V for EOT of 10A). TaN metal gate electrode is integrated with the HfSiON gate dielectric.The effective work function of TaN on HfSiON is 4.3eV, meeting the requirements of NMOS for the metal gate. And, the impacts of sputtering ambient and annealing temperature on the electrical properties of HfSiON gate dielectric are investigated.

  2. Inorganic optical dielectric films

    Science.gov (United States)

    Woollam, John A.

    1996-07-01

    Dielectric coatings have been in use for a very long time, yet today they represent a steadily growing wold-wide industry. A wide range of materials, and applications from the near ultraviolet into the infrared are in use, or under development. This paper is a brief survey, including references to the literature, and a discussion of materials diagnostics. Discussed is the microstructure, optical constants and their relationship as determined especially by optical measurements. This paper emphasizes the materials science aspects rather than applications.

  3. Quantum metal film in the dielectric environment

    Science.gov (United States)

    Babich, A. V.; Pogosov, V. V.

    2013-01-01

    A method has been proposed for self-consistent calculations of characteristics of a metal film in dielectrics. The most interesting (asymmetric) case of metal-dielectric sandwiches, where the dielectrics are different on both sides of the film, has been considered in terms of the modified Kohn-Sham method and the stabilized jellium model. The spectrum, electron work function, and surface energy of polycrystalline films placed in passive insulators have been calculated for the first time using Al and Na as an example. It has been found that the dielectric environment generally leads to a negative change in both the electron work function and the surface energy. In addition to the size changes, the shift of the work function is determined by the arithmetic mean of the dielectric constants of the surrounding media.

  4. Stability analysis of dielectric elastomer film actuator

    Institute of Scientific and Technical Information of China (English)

    LIU YanJu; LIU LiWu; SUN ShouHua; ZHANG Zhen; LENG JinSong

    2009-01-01

    Dielectric elastomer (DE) is the most promising electroactive polymer material for smart actuators. When a piece of DE film is sandwiched between two compliant electrodes with a high electric field, due to the electrostatic force between the two electrodes, the film expands in-plane and contracts out-of-plane so that its thickness becomes thinner. The thinner thickness results in a higher electric field which inversely squeezes the film again. When the electric field exceeds the critical value, the dielectric field breaks down and the actuator becomes invalid. An elastic strain energy function with two material constants is used to analyze the stability of the dielectric elastomer actuator based on the nonlinear electromechanical field theory. The result shows that the actuator improves its stability as the ratio k of the material constants increases, which can be applied to design of actuators. Finally, this method is extended to study the stability of dielectric elastomers with elastic strain energy functions containing three and more material constants.

  5. Stability analysis of dielectric elastomer film actuator

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Dielectric elastomer (DE) is the most promising electroactive polymer material for smart actuators. When a piece of DE film is sandwiched between two compliant electrodes with a high electric field,due to the electrostatic force between the two electrodes,the film expands in-plane and contracts out-of-plane so that its thickness becomes thinner. The thinner thickness results in a higher electric field which inversely squeezes the film again. When the electric field exceeds the critical value,the dielectric field breaks down and the actuator becomes invalid. An elastic strain energy function with two material constants is used to analyze the stability of the dielectric elastomer actuator based on the nonlinear electromechanical field theory. The result shows that the actuator improves its stability as the ratio k of the material constants increases,which can be applied to design of actuators. Finally,this method is extended to study the stability of dielectric elastomers with elastic strain energy functions containing three and more material constants.

  6. Method for fabrication of crack-free ceramic dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

    2016-05-31

    The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

  7. Cu-Induced Dielectric Breakdown of Porous Low-Dielectric-Constant Film

    Science.gov (United States)

    Cheng, Yi-Lung; Lee, Chih-Yen; Huang, Yao-Liang; Sun, Chung-Ren; Lee, Wen-Hsi; Chen, Giin-Shan; Fang, Jau-Shiung; Phan, Bach Thang

    2017-02-01

    Dielectric breakdown induced by Cu ion migration in porous low-k dielectric films has been investigated in alternating-polarity bias conditions using a metal-insulator-metal capacitor with Cu top metal electrode. The experimental results indicated that Cu ions migrated into the dielectric film under stress with positive polarity, leading to weaker dielectric strength and shorter time to failure (TTF). In the alternating-polarity test, the measured TTFs increased with decreasing stressing frequency, implying backward migration of Cu ions during reverse-bias stress. Additionally, compared with a direct-current stress condition, the measured TTFs were higher as the frequency was decreased to 10-2 Hz. The electric-field acceleration factor for porous low-k dielectric film breakdown in the alternating-polarity test was also found to increase. This Cu backward migration effect is effective when the stressing time under negative polarity is longer than 0.1 s.

  8. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.

    2010-03-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  9. PECVD of low-dielectric constant films for ULSI

    Science.gov (United States)

    Shimogaki, Yukihiro

    1998-10-01

    We studied the reduction mechanism of the dielectric constant of F-doped silicon oxide films prepared by PECVD from SiH_4/N_2O/CF4 mixture. From the estimation of the dielectric constant at various frequencies, ranging from 1MHz to 100THz, using CV measurement, Kramers-Kronig relation and the square of the refractive index, we suggest that the dielectric constant due to ionic and electronic polarization is not the dominant factor in decreasing the dielectric constant. It is important to remove -OH in films to obtain very low dielectric constant F-doped silicon oxide films, because Si-OH is the main factor of the orientational polarization in silicon oxide films made by PECVD. To investigate the reaction mechanism which controls the film structure, we changed the residence time of gas in chamber by varying the flow rate. When the residence time in chamber decreases, the film deposition rate increases. We tried to explain flow rate dependency of the deposition rate using a simple CSTR (continuous stirred tank reactor) model. It can be concluded that there are two paths to deposit the films. One route is a deposition by the precursors with poor step coverage profile, and the other route is deposition through intermediates formed by gas phase reactions that contribute to have better step coverage. The overall gas phase reaction rate constant was estimated from these kinetic studies. Same approach was also carried out on the PECVD of C:F film deposition.

  10. Novel negative tone photodefinable low dielectric constant hybrid films

    Science.gov (United States)

    Markley, Thomas J.; Weigel, Scott J.; Kretz, Chris P.

    2005-05-01

    Multifunctional films have the potential to reduce the number of processing steps to prepare various complex electronic devices and thereby reduce the cost of manufacturing the device and increase the throughput of the process. By combining low dielectric thin film and photoresist technologies into one material, such an advantage could be provided to electronics device markets. Air Products and Chemicals has discovered negative tone photodefinable films having dielectric constant values less than 3.0 that are developable in water and/or aqueous TMAH solutions. The low dielectric films produced via a novel reaction pathway involving the use of photoacid generators (PAGs) provides a versatile link to various feature sizes depending on the choice of radiation source and PAG used. Specific examples of film properties and processing latitude will be presented for these developmental materials.

  11. Dielectric and structural properties of ferroelectric betaine arsenate films

    Science.gov (United States)

    Balashova, E. V.; Krichevtsov, B. B.; Zaitseva, N. V.; Yurko, E. I.; Svinarev, F. B.

    2014-12-01

    Ferroelectric films of betaine arsenate and partially deuterated betaine arsenate have been grown by evaporation on LiNbO3, α-Al2O3, and NdGaO3 substrates with a preliminarily deposited structure of interdigitated electrodes, as well as on the Al/glass substrate. This paper presents the results of the examination of the block structure of the films in a polarizing microscope, the X-ray diffraction analysis of their crystal structure, and the investigation of the dielectric properties in a measuring field oriented both parallel and perpendicular to the plane of the film. The transition of the films to the ferroelectric state at T = T c is accompanied by anomalies of the capacitance of the structure, an increase in the dielectric loss, and the appearance of dielectric hysteresis loops. The growth of the films from a solution of betaine arsenate in a heavy water leads to an increase in the ferroelectric transition temperature from T c = 119 K in the films without deuterium to T c = 149 K, which corresponds to the degree of deuteration of approximately 60-70%. The dielectric and structural properties of the films are compared with those of the betaine arsenate single crystals and the previously studied films of betaine phosphite and glycine phosphite.

  12. Low dielectric constant Parylene-F-like films for intermetal dielectric applications

    Science.gov (United States)

    Hanyaloglu, Bengi; Aydinli, Atilla; Oye, Michael; Aydi, Eray S.

    1999-01-01

    We report on the dielectric properties and thermal stability of thin polymer films that are suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-like films, (-CF2-C6H4-CF2-)n, were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3-C6H4-CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers-Kronig analysis of the infrared absorption data. The film's dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300 °C are stable above 400 °C and further optimization could push this limit to as high as 500 °C.

  13. The thickness dependence of dielectric permittivity in thin films

    Science.gov (United States)

    Starkov, Ivan A.; Starkov, Alexander S.

    2016-08-01

    It is well known that the physical properties of thin films depend on their thickness. For a description of such dependences, it is proposed to use a classical model taking into account the presence of film interfaces. A dielectric ball near the half-space was chosen to adopt the approach. The dependence of the effective permittivity of the ball on geometrical and physical parameters of the system is analyzed. It is demonstrated that the dielectric constant of a film can be presented as a sum of the constant of a bulk material and the interface term.

  14. Pyroelectric and dielectric properties of ferroelectric films with interposed dielectric buffer layers

    Science.gov (United States)

    Espinal, Y.; Kesim, M. T.; Misirlioglu, I. B.; Trolier-McKinstry, S.; Mantese, J. V.; Alpay, S. P.

    2014-12-01

    The dielectric and pyroelectric properties of c-domain ferroelectric films with linear dielectric buffer layers were investigated theoretically. Computations were carried out for multilayers consisting of PbZr0.2Ti0.8O3 with Al2O3, SiO2, Si3N4, HfO2, and TiO2 buffers on metalized Si. It is shown that the dielectric and pyroelectric properties of such multilayers can be increased by the presence of the buffer compared to ferroelectric monolayers. Calculations for PbZr0.2Ti0.8O3 films with 1% Al2O3 interposed between electrodes on Si show that the dielectric and pyroelectric coefficients are 310 and 0.070 μC cm-2 °C-1, respectively. Both values are higher than the intrinsic response of PbZr0.2Ti0.8O3 monolayer on Si.

  15. POROUS AMORPHOUS FLUOROPOLYMER FILMS WITH ULTRALOW DIELECTRIC CONSTANT

    Institute of Scientific and Technical Information of China (English)

    DING SHI-JIN; WANG PENG-FEI; ZHANG WEI; WANG JI-TAO; WEI WILLIAM LEE; ZHANG YE-WEN; KIA ZHONG-FU

    2000-01-01

    With the development of ultralarge scale integrated circuit, new interlayer dielectrics with low dielectric constant for multilevel interconnections are required, instead of conventional SiO2 films. For the sake of seeking perfect dielectrics, amorphous fluoropolymer (AF) thin film with a thickness of about 0.9μm has been prepared by spin-coating method, following the principle of phase separation. By capacitance-voltage (C-V) measurements the dielectric constant of the thin film is equal to 1.57 at 1 MHz, which is attributed to numerous pores contained in the film matrix. X-ray photoelectron spectroscopy (XPS) spectra show that after annealing, about 71% CFa groups in the AF film have decomposed into CF2, CF, etc. This leads to the increase of CF2 groups by three times and CF groups by 8% in the AF film. In a word, compared with the film without being annealed, about 25% carbon, 7% fluorine and 12% oxygen atoms will be lost after annealing at 400℃ for 30min.

  16. Dielectric properties of inorganic fillers filled epoxy thin film

    Energy Technology Data Exchange (ETDEWEB)

    Norshamira, A., E-mail: myra.arshad@gmail.com; Mariatti, M., E-mail: mariatti@usm.my [School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang (Malaysia)

    2015-07-22

    The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe{sub 2}O{sub 3}) and Titanium Dioxide (TiO{sub 2}) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types of fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.

  17. Dielectric properties of betaine phosphite and deuterated betaine phosphite films

    Science.gov (United States)

    Balashova, E. V.; Krichevtsov, B. B.; Zaitseva, N. V.; Pankova, G. A.; Frederiks, I. D.; Lemanov, V. V.

    2011-01-01

    Polycrystalline films of betaine phosphite (BPI) and deuterated BPI have been grown by evaporation on LiNbO3, α-SiO2, α-Al2O3, and NdGaO3 substrates. These films consist of large single-crystal blocks in which the polar axis ( b) lies in the substrate plane. The results of studying the dielectric properties of the films using interdigital electrodes, X-ray diffraction, and block images in a polarized-light microscope in reflection are reported. The film transition into the ferroelectric state at T = T c is accompanied by strong anomalies of the capacitance of the film/interdigital structure/substrate structure. The deuteration of BPI films leads to an increase in their temperature T c: from T c = 200 K for BPI-based structures to T c = 280 K for structures with a high degree of deuteration ( d ˜ 90%).

  18. Piezoelectric and dielectric properties of nanoporous polyvinylidence fluoride (PVDF) films

    Science.gov (United States)

    Zhao, Ping; Wang, Shifa; Kadlec, Alec

    2016-04-01

    A nanoporous polyvinylidene Fluoride (PVDF) thin film was developed for applications in energy harvesting, medical surgeries, and industrial robotics. This sponge-like nanoporous PVDF structure dramatically enhanced the piezoelectric effect because it yielded considerably large deformation under a small force. A casting-etching method was adopted to make films, which is effective to control the porosity, flexibility, and thickness of the film. The films with various Zinc Oxide (ZnO) mass fractions ranging from 10 to 50% were fabricated to investigate the porosity effect. The piezoelectric coefficient d33 as well as dielectric constant and loss of the films were characterized. The results were analyzed and the optimal design of the film with the right amount of ZnO nanoparticles was determined.

  19. Fullerene thin-film transistors fabricated on polymeric gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Puigdollers, J. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain)], E-mail: jpuigd@eel.upc.edu; Voz, C. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain); Cheylan, S. [ICFO - Mediterranean Technology Park, Avda del Canal Olimpic s/n, 08860-Castelldefels (Spain); Orpella, A.; Vetter, M.; Alcubilla, R. [Micro and Nano Technology Group (MNT), Dept. Enginyeria Electronica, Universitat Politecnica Catalunya, C/ Jordi Girona 1-3, Modul C4, 08034-Barcelona (Spain)

    2007-07-16

    Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant differences in the microstructure of fullerene thin-films grown on polymethyl methacrylate were observed. Devices with either gold or aluminium top electrodes have been fabricated. Although the lower work-function of aluminium compared to gold should favour electron injection, similar field-effect mobilities in the range of 10{sup -2} cm{sup 2} V{sup -1} s{sup -1} were achieved in both cases. Actually, the output characteristics indicate that organic thin-film transistors behave more linearly with gold than with aluminium electrodes. These results confirm that not only energy barriers determine carrier injection at metal/organic interfaces, but also chemical interactions.

  20. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  1. Dielectric Spectroscopy of Localized Electrical Charges in Ferrite Thin Film

    Science.gov (United States)

    Abdellatif, M. H.; Azab, A. A.; Moustafa, A. M.

    2017-09-01

    A thin film of Gd-doped Mn-Cr ferrite has been prepared by pulsed laser deposition from a bulk sample of the same ferrite prepared by the conventional double sintering ceramic technique. The charge localization and surface conduction in the ferromagnetic thin film were studied. The relaxation of the dielectric dipoles after exposure to an external alternating-current (AC) electric field was investigated. The effect of charge localization on the real and imaginary parts of the dielectric modulus was studied. The charge localization in the thin film was enhanced and thereby the Maxwell-Wagner-type interfacial polarization. The increase in interfacial polarization is a direct result of the enhanced charge localization. The sample was characterized in terms of its AC and direct-current (DC) electrical conductivity, and thermally stimulated discharge current.

  2. Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

    Science.gov (United States)

    Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

  3. Thin film transistors for flexible electronics: Contacts, dielectrics and semiconductors

    KAUST Repository

    Quevedo-López, Manuel Angel Quevedo

    2011-06-01

    The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.

  4. Optical and dielectric properties of double helix DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Soenmezoglu, Savas, E-mail: svssonmezoglu@kmu.edu.tr [Department of Physics, Faculty of Kamil Ozdag Science, Karamanoglu Mehmetbey University, 70100, Karaman (Turkey); Ates Soenmezoglu, Ozlem [Department of Biology, Faculty of Kamil Ozdag Science, Karamanoglu Mehmetbey University, 70100, Karaman (Turkey)

    2011-12-01

    In this work, the thin film of wheat DNA was deposited by spin-coating technique onto glass substrate, and the optical and dielectric properties of the double helix DNA thin film were investigated. The optical constants such as refractive index, extinction coefficient, dielectric constant, dissipation factor, relaxation time, and optical conductivity were determined from the measured transmittance spectra in the wavelength range 190-1100 nm. Meanwhile, the dispersion behavior of the refractive index was studied in terms of the single oscillator Wemple-DiDomenico (W-D) model, and the physical parameters of the average oscillator strength, average oscillator wavelength, average oscillator energy, the refractive index dispersion parameter and the dispersion energy were achieved. Furthermore, the optical band gap values were calculated by W-D model and Tauc model, respectively, and the values obtained from W-D model are in agreement with those determined from the Tauc model. The analysis of the optical absorption data indicates that the optical band gap E{sub g} was indirect transitions. These results provide some useful references for the potential application of the DNA thin films in fiber optic, solar cell and optoelectronic devices. Highlights: {yields} The optical constants of DNA in full UV-vis spectrum were determined. {yields} The change in optical and dielectric property demonstrates that this material has potential to be used as a novel technology. {yields} DNA shows promise to be more suitable material than other materials currently being used for photonic devices.

  5. Field-effect transistor with MTDS contacts and subgate dielectric based on Langmuir films

    Science.gov (United States)

    Bannikov, V. S.; Matveeva, N. K.; Miagkov, I. V.; Novak, V. R.; Rakitin, V. V.

    1989-03-01

    Experimental results are reported on an MTDS (metal-tunnel-dielectric-semiconductor) FET with the following characteristics: the drain and source are MTDS contacts, with a monolayer Langmuir (ML) film playing the role of the tunnel dielectric; and the subgate dielectric is an ML film. The drain and source as well as the subgate dielectric are formed at low-temperature. The static output characteristics of an MTDP transistor are presented.

  6. Dielectric breakdown in nano-porous thin films

    Science.gov (United States)

    Borja, Juan Pablo

    Unknown to most computer users and mobile device enthusiasts, we have finally entered into a critical age of chip manufacturing. January of 2014 marks the official start of the quest by the semiconductor industry to successfully integrate sub 14nm process technology nodes in accordance to the International Technology Roadmap for Semiconductors (ITRS). The manufacturing of nano-scale features represents a major bottleneck of its own. However, a bigger challenge lies in reliably isolating the massive chip interconnect network. The present work is aimed at generating a theoretical and experimental framework to predict dielectric breakdown for thin films used in computer chip components. Here, a set of experimental techniques are presented to assess and study dielectric failure in novel thin films. A theory of dielectric breakdown in thin nano-porous films is proposed to describe combined intrinsic and metal ion catalyzed failure. This theory draws on experimental evidence as well as fundamental concepts from mass and electronic charge transport. The drift of metal species was found to accelerate intrinsic dielectric failure. The solubility of metals species such as Cu was found to range from 7.0x1025 ions/m3 to 1.86x1026 ions/m3 in 7% porous SiCOH films. The diffusion coefficient for Cu species was found to span from 4.2x10-19 m2/s to 1.86x10-21 m2/s. Ramped voltage stress experiments were used to identify intrinsic failure from metal catalyzed failure. Intrinsic breakdown is defined when time to failure against applied field ramp rate results in ∂(ln(TTF))/∂(ln(R)) ≈ -1. Intrinsic failure was studied using Au. Here, ∂(ln(TTF))/∂(ln(R)) ≈ -0.95, which is an experimental best case scenario for intrinsic failure. Au is commonly reluctant to ionize which means that failure occurs in the absence of ionic species. Metal catalyzed failure was investigated using reactive electrodes such as Cu, and Ag. Here, trends for ∂(ln(TTF))/∂(ln(R)) significantly

  7. Dielectric properties of cobalt ferrite nanoparticles in ultrathin nanocomposite films.

    Science.gov (United States)

    Alcantara, Gustavo B; Paterno, Leonardo G; Fonseca, Fernando J; Pereira-da-Silva, Marcelo A; Morais, Paulo C; Soler, Maria A G

    2013-12-07

    Multilayered nanocomposite films (thickness 50-90 nm) of cobalt ferrite nanoparticles (np-CoFe2O4, 18 nm) were deposited on top of interdigitated microelectrodes by the layer-by-layer technique in order to study their dielectric properties. For that purpose, two different types of nanocomposite films were prepared by assembling np-CoFe2O4 either with poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonic acid) or with polyaniline and sulfonated lignin. Despite the different film architectures, the morphology of both was dominated by densely-packed layers of nanoparticles surrounded by polyelectrolytes. The dominant effect of np-CoFe2O4 was also observed after impedance spectroscopy measurements, which revealed that dielectric behavior of the nanocomposites was largely influenced by the charge transport across nanoparticle-polyelectrolyte interfaces. For example, nanocomposites containing np-CoFe2O4 exhibited a single low-frequency relaxation process, with time constants exceeding 15 ms. At 1 kHz, the dielectric constant and the dissipation factor (tan δ) of these nanocomposites were 15 and 0.15, respectively. These values are substantially inferior to those reported for pressed pellets made exclusively of similar nanoparticles. Impedance data were further fitted with equivalent circuit models from which individual contributions of particle's bulk and interfaces to the charge transport within the nanocomposites could be evaluated. The present study evidences that such nanocomposites display a dielectric behavior dissimilar from that exhibited by their individual counterparts much likely due to enlarged nanoparticle-polyelectrolyte interfaces.

  8. Ionic mobility in DNA films studied by dielectric spectroscopy.

    Science.gov (United States)

    Kahouli, Abdelkader; Valle-Orero, Jessica; Garden, Jean-Luc; Peyrard, Michel

    2014-09-01

    Double-helix DNA molecules can be found under different conformational structures driven by ionic and hydration surroundings. Usually, only the B-form of DNA, which is the only form stable in aqueous solution, can be studied by dielectric measurements. Here, the dielectric responses of DNA molecules in the A- and B-form, oriented co-linearly within fibres assembled in a film have been analyzed. The dielectric dispersion, permittivity and dissipation factor, have been measured as a function of frequency, strength voltage, time, temperature and nature of the counter-ions. Besides a high electrode polarization component, two relaxation peaks have been observed and fitted by two Cole-Cole relaxation terms. In the frequency range that we investigated (0.1 Hz to 5 ·10(6) Hz) the dielectric properties are dominated by the mobility and diffusivity of the counter-ions and their interactions with the DNA molecules, which can therefore be characterized for the A- and B-forms of DNA.

  9. Bismuth pyrochlore-based thin films for dielectric energy storage

    Science.gov (United States)

    Michael, Elizabeth K.

    The drive towards the miniaturization of electronic devices has created a need for dielectric materials with large energy storage densities. These materials, which are used in capacitors, are a critical component in many electrical systems. Here, the development of dielectric energy storage materials for pulsed power applications, which require materials with the ability to accumulate a large amount of energy and then deliver it to the system rapidly, is explored. The amount of electrostatic energy that can be stored by a material is a function of the induced polarization and the dielectric breakdown strength of the material. An ideal energy storage dielectric would possess a high relative permittivity, high dielectric breakdown strength, and low loss tangent under high applied electric fields. The bismuth pyrochlores are a compositionally tunable family of materials that meet these requirements. Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate, were fabricated using a novel solution chemistry based upon the Pechini method. This solution preparation is advantageous because it avoids the use of teratogenic solvents, such as 2-methoxyethanol. Crystalline films fabricated using this solution chemistry had very small grains that were approximately 27 nm in lateral size and 35 nm through the film thickness. Impedance measurements found that the resistivity of the grain boundaries was two orders of magnitude higher than the resistivity of the grain interior. The presence of many resistive grain boundaries impeded conduction through the films, resulting in high breakdown strengths for these materials. In addition to high breakdown strengths, this family of materials exhibited moderate relative permittivities of between 55 +/- 2 and 145 +/- 5, for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008 +/- 0.0001. Increases in the concentration of the tantalum

  10. Self-standing chitosan films as dielectrics in organic thin-film transistors

    OpenAIRE

    Morgado, J; Pereira, A. T.; A. M. Braganca; Q. Ferreira; Fernandes, S. C. M.; Freire, C. S. R.; Silvestre, A. J. D.; Pascoal Neto, C.; L. Alcacer

    2013-01-01

    Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s) comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-...

  11. Self-standing chitosan films as dielectrics in organic thin-film transistors

    Directory of Open Access Journals (Sweden)

    J. Morgado

    2013-12-01

    Full Text Available Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-based transistors, these are promising results for the area of sustainable organic electronics in general and for biocompatible electronics in particular.

  12. Dielectric Characterization of Confined Water in Chiral Cellulose Nanocrystal Films.

    Science.gov (United States)

    Natarajan, Bharath; Emiroglu, Caglar; Obrzut, Jan; Fox, Douglas M; Pazmino, Beatriz; Douglas, Jack F; Gilman, Jeffrey W

    2017-04-26

    A known deterrent to the large-scale development and use of cellulose nanocrystals (CNCs) in composite materials is their affinity for moisture, which has a profound effect on dispersion, wetting, interfacial adhesion, matrix crystallization, water uptake, and hydrothermal stability. To quantify and control the hydration and confinement of absorbed water in CNCs, we studied sulfated-CNCs neutralized with sodium cations and CNCs functionalized with less hydrophilic methyl(triphenyl)phosphonium cations. Films were cast from water suspensions at 20 °C under controlled humidity and drying rate, yielding CNC materials with distinguishably different dielectric properties and cholesteric structures. By controlling the evaporation rate, we obtained self-assembled chiral CNC films with extended uniformity, having helical modulation length (nominal pitch) tunable from 1300 to 600 nm. SEM imaging and UV-vis-NIR total reflectance spectra revealed tighter and more uniform CNC packing in films cast at slow evaporation rates or having lower surface energy when modified with phosphonium. The dielectric constant was measured by a noncontact microwave cavity perturbation method and fitted to a classical mixing model employing randomly oriented ellipsoidal water inclusions. The dielectric constant of absorbed water was found to be significantly smaller than that for free liquid indicating a limited mobility due to binding with the CNC "matrix". In the case of hydrophilic Na-modified CNCs, a decreasing pitch led to greater anisotropy in the shape of moisture inclusions (ellipsoidal to platelet-like) and greater confinement. In contrast, the structure of hydrophobic phosphonium-modified CNC films was found to have reduced pitch, yet the shape of confined water remained predominantly spherical. These results provide a useful perspective on the current state of understanding of CNC-water interactions as well as on CNC self-assembly mechanisms. More broadly, we believe that our results

  13. Dielectric properties of betaine phosphite and deuterated betaine phosphite films

    Energy Technology Data Exchange (ETDEWEB)

    Balashova, E. V., E-mail: balashova@mail.ioffe.ru; Krichevtsov, B. B.; Zaitseva, N. V. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Pankova, G. A. [Russian Academy of Sciences, Institute of Macromolecular Compounds (Russian Federation); Frederiks, I. D.; Lemanov, V. V. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2011-01-15

    Polycrystalline films of betaine phosphite (BPI) and deuterated BPI have been grown by evaporation on LiNbO{sub 3}, {alpha}-SiO{sub 2}, {alpha}-Al{sub 2}O{sub 3}, and NdGaO{sub 3} substrates. These films consist of large single-crystal blocks in which the polar axis (b) lies in the substrate plane. The results of studying the dielectric properties of the films using interdigital electrodes, X-ray diffraction, and block images in a polarized-light microscope in reflection are reported. The film transition into the ferroelectric state at T = T{sub c} is accompanied by strong anomalies of the capacitance of the film/interdigital structure/substrate structure. The deuteration of BPI films leads to an increase in their temperature T{sub c}: from T{sub c} = 200 K for BPI-based structures to T{sub c} = 280 K for structures with a high degree of deuteration (d {approx} 90%).

  14. Structure and performance of dielectric films based on self-assembled nanocrystals with a high dielectric constant.

    Science.gov (United States)

    Huang, Limin; Liu, Shuangyi; Van Tassell, Barry J; Liu, Xiaohua; Byro, Andrew; Zhang, Henan; Leland, Eli S; Akins, Daniel L; Steingart, Daniel A; Li, Jackie; O'Brien, Stephen

    2013-10-18

    Self-assembled films built from nanoparticles with a high dielectric constant are attractive as a foundation for new dielectric media with increased efficiency and range of operation, due to the ability to exploit nanofabrication techniques and emergent electrical properties originating from the nanoscale. However, because the building block is a discrete one-dimensional unit, it becomes a challenge to capture potential enhancements in dielectric performance in two or three dimensions, frequently due to surface effects or the presence of discontinuities. This is a recurring theme in nanoparticle film technology when applied to the realm of thin film semiconductor and device electronics. We present the use of chemically synthesized (Ba,Sr)TiO3 nanocrystals, and a novel deposition-polymerization technique, as a means to fabricate the dielectric layer. The effective dielectric constant of the film is tunable according to nanoparticle size, and effective film dielectric constants of up to 34 are enabled. Wide area and multilayer dielectrics of up to 8 cm(2) and 190 nF are reported, for which the building block is an 8 nm nanocrystal. We describe models for assessing dielectric performance, and distinct methods for improving the dielectric constant of a nanocrystal thin film. The approach relies on evaporatively driven assembly of perovskite nanocrystals with uniform size distributions in a tunable 7-30 nm size range, coupled with the use of low molecular weight monomer/polymer precursor chemistry that can infiltrate the porous nanocrystal thin film network post assembly. The intercrystal void space (low k dielectric volume fraction) is minimized, while simultaneously promoting intercrystal connectivity and maximizing volume fraction of the high k dielectric component. Furfuryl alcohol, which has good affinity to the surface of (Ba,Sr)TiO3 nanocrystals and miscibility with a range of solvents, is demonstrated to be ideal for the production of nanocomposites. The

  15. High temperature polymer dielectric film-wire insulation

    Science.gov (United States)

    Nairus, John G.

    1994-01-01

    The highlights of the program are outlined including two major accomplishments. TRW identified and demonstrated the potential of two aromatic/heterocyclic polymers to have an outstanding and superior combination of electrical, thermal, and chemical resistance properties versus state-of-the-art Kapton for spacecraft and/or aircraft dielectric insulation applications. (Supporting data is provided in tables.) Feasibility was demonstrated for supporting/enabling technologies such as ceramic coatings, continuous film casting, and conductor wire wrapping, which are designed to accelerate qualification and deployment of the new wire insulation materials for USAF systems applications during the mid- to late-1990's.

  16. The statistics of the dielectric breakdown of thin films

    CERN Document Server

    Rowland, S M

    1984-01-01

    The statistics of the dielectric breakdown of thin films of silicon monoxide and aluminium oxide have been studied. The self healing technique which allows numerous breakdowns to be observed on one sample was employed. Ramp and steady state voltage experiments are reported and the limitations of these techniques are discussed. It is shown that the experimental data on breakdown can be fitted to two-parameter Weibull distributions using mixed distribution models. Methods have been developed to facilitate the evaluation of the associated parameters from results taken over limited time periods by graphical means. The significance of these parameters and the relationship between ramp and steady state testing techniques are discussed.

  17. Unraveling dielectric and electrical properties of ultralow-loss lead magnesium niobate titanate pyrochlore dielectric thin films for capacitive applications

    Science.gov (United States)

    Zhu, X. H.; Defaÿ, E.; Suhm, A.; Fribourg-Blanc, E.; Aïd, M.; Zhu, J. L.; Xiao, D. Q.; Zhu, J. G.

    2010-05-01

    PbO-MgO-Nb2O5-TiO2 (PMNT) pyrochlore thin films were prepared on Pt-coated silicon substrates by radio-frequency magnetron sputtering and postdeposition annealing method. Very interestingly, these pyrochlore-structured PMNT thin films exhibited ultralow dielectric losses, with a typical loss tangent as low as 0.001, and relatively high dielectric constants, typically ɛr˜170. It was found that the relative permittivity slightly but continuously increased upon cooling without any signature of a structural phase transition, displaying a quantum paraelectriclike behavior; meanwhile, the PMNT pyrochlore thin films did not show any noticeable dielectric dispersion in the real part of permittivity over a wide temperature range (77-400 K). Their dielectric responses could, however, be efficiently tuned by applying a dc electric field. A maximum applied bias field of 1 MV/cm resulted in a ˜20% tunability of the dielectric permittivity, giving rise to a fairly large coefficient of the dielectric nonlinearity, ˜2.5×109 J C-4 m-5. Moreover, the PMNT pyrochlore films exhibited superior electrical insulation properties with a relatively high breakdown field (Ebreakdown˜1.5 MV/cm) and a very low leakage current density of about 8.2×10-7 A/cm2 obtained at an electric field intensity as high as 500 kV/cm.

  18. Controllable growth of dielectric/semiconductor integrated films

    Institute of Scientific and Technical Information of China (English)

    LI YangRong; ZHU Jun; LUO WenBo; LIU XingZhao; ZHANG WanLi

    2009-01-01

    Currently,electronic information systems are developing quickly towards further miniaturization and monolithic integration so as to realize smaller volume,higher velocity and lower power consumption.For this purpose,the integration of all sorts of active devices (mainly fabricated by semiconductors) with passive devices (fabricated by functional materials) is particularly important and impendent.Therefore,it is necessary to integrate multifunctional oxide dielectrics possessing electric,magnetic,acoustic,optical and thermal properties characterized by spontaneous polarization with semiconductors bearing the characters of carrier transportation to form artificial structures via deposition of solid films.This kind of integrated films may have two characters,i.e.,the all-in-one multifunction and modulation of electromagnetic properties by hetero-interface.This makes it possible to realize monolithic integration of detecting,processing,transmission,executing and storing of electronic information.Meanwhile,possible integrated coupling effects will be pursued instead of exploring the limited physical properties of the related materials.In this paper,we put forward a new direction of developing electronic devices with higher performances,and demonstrate some results concerning our recent research on the interface-controllable integrated growth of dielectrics and GaN.Recent progresses of the related research in the world are also reviewed.

  19. Improved gas sensing and dielectric properties of Fe doped hydroxyapatite thick films: Effect of molar concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Mene, Ravindra U. [PDEA' s, Annasaheb Waghire College of Science, Arts and Commerce, Otur 412409, M.S. (India); School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India); Mahabole, Megha P. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India); Mohite, K.C. [Haribhai. V. Desai College, Pune 411002, M.S. (India); Khairnar, Rajendra S., E-mail: rskhairnarsps@gmail.com [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India)

    2014-02-01

    Highlights: • We report improved gas sensing and dielectric characteristics of Fe ion exchanged HAp films. • Fe doped HAp film shows maximum gas response at relatively lower temperature. • Response and gas uptake capacity of sensors is improved for appropriate amount of Fe ions in HAp matrix. • Fe-HAp films exhibit remarkable improvement in dielectric properties compared to pure HAp. • Fe doped HAp films show significant improvement in gas sensing as well as in dielectric properties. - Abstract: In the present work Fe doped hydroxyapatite (Fe-HAp) thick films has been successfully utilized to improve the gas sensing as well as its dielectric properties. Initially, HAp nano powder is synthesized by chemical precipitation process and later on Fe ions are doped in HAp by ion exchange process. Structural and morphological modifications are observed by means of X-ray diffraction and scanning electron microscopy analysis. The sensing parameters such as operating temperature, response/recovery time and gas uptake capacity are experimentally determined. The Fe-HAp (0.05 M) film shows improved CO and CO{sub 2} gas sensing capacity at lower operating temperature compared to pure HAp. Moreover, variation of dielectric constant and dielectric loss for pure and Fe-HAp thick films are studied as a function of frequency in the range of 10 Hz–1 MHz. The study reveals that Fe doped HAp thick films improve the sensing and dielectric characteristics as compared to pure HAp.

  20. Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

    Directory of Open Access Journals (Sweden)

    Liu X.

    2015-04-01

    Full Text Available The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (a-Si:H with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (a-Si, we show that TLS can be eliminated in this system as the films become denser and more structurally ordered under certain deposition conditions. Our results demonstrate that TLS are not intrinsic to the glassy state but instead reside in low density regions of the amorphous network. This work obviates the role hydrogen was previously thought to play in removing TLS in a-Si:H and favors an ideal four-fold covalently bonded amorphous structure as the cause for the disappearance of TLS. Our result supports the notion that a-Si can be made a “perfect glass” with “crystal-like” properties, thus offering an encouraging opportunity to use it as a simple crystal dielectric alternative in applications, such as in modern quantum devices where TLS are the source of dissipation, decoherence and 1/f noise.

  1. Nanoscale electrochemistry using dielectric thin films as solid electrolytes.

    Science.gov (United States)

    Valov, Ilia; Lu, Wei D

    2016-08-01

    It is now well known that at the nanoscale matters behave differently compared to bulk phases. Increased reactivity, deviations in structural, thermodynamic and kinetic properties make nanoscale materials and processes attractive for both fundamental research and applications. Here we show that nanometer thin films of materials with dielectric properties at the macroscopic level such as SiO2, Ta2O5 and HfO2 behave as solid electrolytes and exhibit evident ionic transport and electrochemical redox reactions. Experimental studies demonstrate that classical electrochemical potentiodynamic and steady state methods can be used to study the mass and charge transport at the nanoscale. We believe these reported properties of nanomatter open new opportunities for fundamental research and applications.

  2. Voltage-Induced Buckling of Dielectric Films using Fluid Electrodes

    CERN Document Server

    Tavakol, Behrouz

    2016-01-01

    Accurate and integrable control of different flows within microfluidic channels is crucial to further development of lab-on-a-chip and fully integrated adaptable structures. Here we introduce a flexible microactuator that buckles at a high deformation rate and alters the downstream fluid flow. The microactuator consists of a confined, thin, dielectric film that buckles into the microfluidic channel when exposed to voltage supplied through conductive fluid electrodes. We estimate the critical buckling voltage, and characterize the buckled shape of the actuator. Finally, we investigate the effects of frequency, flow rate, and the pressure differences on the behavior of the buckling structure and the resulting fluid flow. These results demonstrate that the voltage--induced buckling of embedded microstructures using fluid electrodes provides a means for high speed attenuation of microfluidic flow.

  3. The jump-into-contact effect in biased AFM probes on dielectric films and its application to quantify the dielectric permittivity of thin layers.

    Science.gov (United States)

    Revilla, Reynier I

    2016-07-01

    The jump-into-contact (JIC) phenomenon in biased atomic force microscopy (AFM) probes on dielectric films is studied. The influence of the film thickness on the position at which the AFM tip collapses irreversibly into the sample surface was theoretically analyzed using a widely accepted analytical expression of the probe-sample electrostatic interaction force. It was demonstrated that for relatively high values of voltage (V > 10-20 V) applied between the probe and the substrate the cantilever deflection at the JIC is independent of the dielectric film thickness for thin-ultrathin layers (h film thickness. Based on this effect an empirical model was formulated to estimate the dielectric permittivity of thin/ultrathin dielectric films using the jump-into-contact distance. The procedure was successfully applied on thin PVD-SiO2 films, obtaining good agreement with a dielectric constant value previously reported for the same material.

  4. On calculating the energy characteristics of a metal film with a dielectric coating

    Science.gov (United States)

    Babich, A. V.

    2014-02-01

    A method for calculating the characteristics of a metal film in a dielectric surroundings is suggested. The most interesting case of asymmetric metal-dielectric sandwiches, in which the dielectrics on both sides of the film are different, is considered in the context of the Kohn-Sham modified method. The spectrum, the electron work function, and the surface energy of polycrystalline and single-crystal films placed into passive insulators are calculated for the first time. In general, the dielectric surroundings leads to a negative change in the electron work function and the surface energy. In addition to size-effect-related changes, the shift of the work function is determined by the arithmetic mean of the dielectric constants of the surrounding media. Calculations have been performed for Na, Al, and Pb.

  5. Polymer dielectric materials for organic thin-film transistors: Interfacial control and development for printable electronics

    Science.gov (United States)

    Kim, Choongik

    Organic thin-film transistors (OTFTs) have been extensively studied for organic electronics. In these devices, organic semiconductor-dielectric interface characteristics play a critical role in influencing OTFT operation and performance. This study begins with exploring how the physicochemical characteristics of the polymer gate dielectric affects the thin-film growth mode, microstructure, and OTFT performance parameters of pentacene films deposited on bilayer polymer (top)-SiO2 (bottom) dielectrics. Pentacene growth mode varies considerably with dielectric substrate, and correlations are established between pentacene film deposition temperature, the thin-film to bulk microstructural phase transition, and OTFT device performance. Furthermore, the primary influence of the polymer dielectric layer glass transition temperature on pentacene film microstructure and OTFT response is shown for the first time. Following the first study, the influence of the polymer gate dielectric viscoelastic properties on overlying organic semiconductor film growth, film microstructure, and TFT response are investigated in detail. From the knowledge that nanoscopically-confined thin polymer films exhibit glass transition temperatures that deviate substantially from those of the corresponding bulk materials, pentacene (p-channel) and cyanoperylene (n-channel) films grown on polymer gate dielectrics at temperatures well-below their bulk glass transition temperatures (Tg(b)) have been shown to exhibit morphological/microstructural transitions and dramatic OTFT performance discontinuities at well-defined temperatures (defined as the polymer "surface glass transition temperature," or Tg(s)). These transitions are characteristic of the particular polymer architecture and independent of film thickness or overall film cooperative chain dynamics. Furthermore, by analyzing the pentacene films grown on UV-curable polymer dielectrics with different curing times (hence, different degrees of

  6. Maximizing the dielectric response of molecular thin films via quantum chemical design.

    Science.gov (United States)

    Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

    2014-12-23

    Developing high-capacitance organic gate dielectrics is critical for advances in electronic circuitry based on unconventional semiconductors. While high-dielectric constant molecular substances are known, the mechanism of dielectric response and the fundamental chemical design principles are not well understood. Using a plane-wave density functional theory formalism, we show that it is possible to map the atomic-scale dielectric profiles of molecule-based materials while capturing important bulk characteristics. For molecular films, this approach reveals how basic materials properties such as surface coverage density, molecular tilt angle, and π-system planarity can dramatically influence dielectric response. Additionally, relatively modest molecular backbone and substituent variations can be employed to substantially enhance film dielectric response. For dense surface coverages and proper molecular alignment, conjugated hydrocarbon chains can achieve dielectric constants of >8.0, more than 3 times that of analogous saturated chains, ∼2.5. However, this conjugation-related dielectric enhancement depends on proper molecular orientation and planarization, with enhancements up to 60% for proper molecular alignment with the applied field and an additional 30% for conformations such as coplanarity in extended π-systems. Conjugation length is not the only determinant of dielectric response, and appended polarizable high-Z substituents can increase molecular film response more than 2-fold, affording estimated capacitances of >9.0 μF/cm2. However, in large π-systems, polar substituent effects are substantially attenuated.

  7. Dielectric dilatometry on thin Teflon-PTFE films prepared by pulsed-laser deposition

    Science.gov (United States)

    Schwoediauer, Reinhard; Bauer-Gogonea, Simona; Bauer, Stefan; Heitz, J.; Arenholz, Enno; Baeuerle, Dieter

    1999-12-01

    Polytetrafluoroethylene (Teflon PTFE) films were grown by pulsed-laser deposition (PLD). Films prepared by ablation from press-sintered targets are found to be highly crystalline, with spherulite sizes adjustable over more than one order in magnitude by suitable thermal annealing. As revealed by dielectric dilatometry, PLD-PTFE films show characteristics remarkably similar to those of conventional PTFE, i.e. the same structural first-order phase transitions. Dielectric losses are low and indicate no tendency to film oxidation. PLD-PTFE films additionally show an excellent charge-stability, comparable and even superior to commercially available Teflon-PTFE foils. PLD-PTFE enlarges the family of Teflon materials and may thus become interesting for potential miniaturized electret devices. Furthermore, dielectric dilatometry provides an elegant means for the determination of the coefficient of thermal expansion in thin nonpolar films.

  8. Electrical and Dielectric Properties of Exfoliated Graphite/Polyimide Composite Films with Low Percolation Threshold

    Science.gov (United States)

    Yu, Li; Zhang, Yi-He; Shang, Jiwu; Ke, Shan-Ming; Tong, Wang-shu; Shen, Bo; Huang, Hai-Tao

    2012-09-01

    Exfoliated graphite/polyimide composite films were synthesized by in situ polymerization. The electrical and dielectric properties of composite films with different volume fraction of exfoliated graphite were investigated over the frequency range from 103 Hz to 3 × 106 Hz. The dielectric behavior of the composite films was investigated by percolation theory and a microcapacitor model. A low percolation threshold f c ≈ 3.1 vol.% was obtained due to the high aspect ratio of the exfoliated graphite. Both the dielectric constant and alternating-current (AC) conductivity showed an abrupt increase in the vicinity of the percolation threshold. The ultralarge enhancement of the dielectric constant near and beyond the percolation threshold was due to Maxwell-Wagner-Sillars (MWS) interfacial polarization between the exfoliated graphite and polyimide and interface polarization between the composite film and electrode.

  9. Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application.

    Science.gov (United States)

    Zhuang, Jiaqing; Sun, Qi-Jun; Zhou, Ye; Han, Su-Ting; Zhou, Li; Yan, Yan; Peng, Haiyan; Venkatesh, Shishir; Wu, Wei; Li, Robert K Y; Roy, V A L

    2016-11-16

    Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/Ln2O3/Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

  10. PMMA–SiO{sub 2} hybrid films as gate dielectric for ZnO based thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acosta, M.D. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, Querétaro, Qro. 76001 (Mexico); Quevedo-López, M.A. [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75083 (United States); Ramírez-Bon, R., E-mail: rrbon@qro.cinvestav.mx [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, Querétaro, Qro. 76001 (Mexico)

    2014-08-01

    In this paper we report a low temperature sol–gel deposition process of PMMA–SiO{sub 2} hybrid films, with variable dielectric properties depending on the composition of the precursor solution, for applications to gate dielectric layers in field-effect thin film transistors (FE-TFT). The hybrid layers were processed by a modified sol–gel route using as precursors Tetraethyl orthosilicate (TEOS) and Methyl methacrylate (MMA), and 3-(Trimethoxysilyl)propyl methacrylate (TMSPM) as the coupling agent. Three types of hybrid films were processed with molar ratios of the precursors in the initial solution 1.0: 0.25, 0.50, 0.75: 1.0 for TEOS: TMSPM: MMA, respectively. The hybrid films were deposited by spin coating of the hybrid precursor solutions onto p-type Si (100) substrates and heat-treated at 90 °C for 24 h. The chemical bonding in the hybrid films was analyzed by Fourier Transform Infrared Spectroscopy to confirm their hybrid nature. The refractive index of the hybrid films as a function of the TMSPM coupling agent concentration, were determined from a simultaneous analysis of optical reflectance and spectroscopic ellipsometry experimental data. The PMMA–SiO{sub 2} hybrid films were studied as dielectric films using metal-insulator-metal structures. Capacitance–Voltage (C–V) and current–voltage (I–V) electrical methods were used to extract the dielectric properties of the different hybrid layers. The three types of hybrid films were tested as gate dielectric layers in thin film transistors with structure ZnO/PMMA–SiO{sub 2}/p-Si with a common bottom gate and patterned Al source/drain contacts, with different channel lengths. We analyzed the output electrical responses of the ZnO-based TFTs to determine their performance parameters as a function of channel length and hybrid gate dielectric layer. - Highlights: • PMMA–SiO{sub 2} hybrid films as dielectric material synthesized by sol–gel process at low temperature. • PMMA–SiO{sub 2

  11. Enhanced dielectric performance in polymer composite films with carbon nanotube-reduced graphene oxide hybrid filler.

    Science.gov (United States)

    Kim, Jin-Young; Kim, TaeYoung; Suk, Ji Won; Chou, Harry; Jang, Ji-Hoon; Lee, Jong Ho; Kholmanov, Iskandar N; Akinwande, Deji; Ruoff, Rodney S

    2014-08-27

    The electrical conductivity and the specific surface area of conductive fillers in conductor-insulator composite films can drastically improve the dielectric performance of those films through changing their polarization density by interfacial polarization. We have made a polymer composite film with a hybrid conductive filler material made of carbon nanotubes grown onto reduced graphene oxide platelets (rG-O/CNT). We report the effect of the rG-O/CNT hybrid filler on the dielectric performance of the composite film. The composite film had a dielectric constant of 32 with a dielectric loss of 0.051 at 0.062 wt% rG-O/CNT filler and 100 Hz, while the neat polymer film gave a dielectric constant of 15 with a dielectric loss of 0.036. This is attributed to the increased electrical conductivity and specific surface area of the rG-O/CNT hybrid filler, which results in an increase in interfacial polarization density between the hybrid filler and the polymer.

  12. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  13. Dielectric and Ferroelectric Properties of Lead Lanthanum Zirconate Titanate Thin Films for Capacitive Energy Storage

    Science.gov (United States)

    Tong, Sheng

    As the increasing requirement of alternative energy with less pollution influence and higher energy efficient, new energy source and related storage methods are hot topic nowadays. Capacitors that supply high instant power are one of the keys in this application for both economic and functional design aspects. To lower the cost and increases the volumetric efficiency and reliability, relaxor thin films are considered as one of the candidates of the next generation capacitors. The research mainly focuses on dielectric and ferroelectric properties of lead lanthanum zirconate titanate or Pb1-xLax(ZryTi1-y)O3 (PLZT, x/y/1-y) relaxor thin films deposited on silicon (Si) and nickel (Ni) substrates in a range of thickness with different bottom electrodes, e.g. Platinum (Pt) and LaNiO3 (LNO). The final fabricated PLZT film capacitors will show strong potential for the energy storage application. The method adopted is the acetic acid assisted sol-gel deposition for the PLZT thin films. The wet chemical process is cost-effective and easily to scale up for plant/industrial products. We investigated the different bottom electrode/substrate influence in structure, microstructure, phases/defects, and heat-treatment conditions to achieve the optimized PLZT thin films. Issues of basic physical size effects in the PLZT thin films were also investigated, including thickness effects in the dielectric and ferroelectric properties of the films in a wide range of temperatures, the phase transition of the thin-film relaxors, lanthanum content effect, electrode-dielectric junction, misfit strain effect, etc. Based on the results and analysis, optimum PLZT film capacitors can be determined of proper substrate/electrode/dielectric that achieves the desired dielectric properties required for different applications, especially a more cost-effective method to develop volumetrically efficient capacitors with high charge density, energy density, dielectric breakdown strength, energy storage

  14. Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

    Science.gov (United States)

    Bodeux, Romain; Michau, Dominique; Josse, Michaël; Maglione, Mario

    2014-12-01

    Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO2/SiO2/Si substrates from Ba2LnFeNb4O15 ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk, i.e., ɛ ˜150 and σ ˜10-6 Ω-1 cm-1 at 1 MHz and room temperature. The films exhibit two dielectric anomalies which are attributed to Maxwell Wagner polarization mechanism and relaxor behaviour. Both anomalies are sensitive to post-annealing under oxygen atmosphere and their activation energies are similar Ea ˜0.30 eV. They are explained in terms of electrically heterogeneous contributions in the films.

  15. Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

    Science.gov (United States)

    Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

    2016-11-01

    Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100–200 kHz and in the temperature range of 25–300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C‑1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

  16. Damage induced by femtosecond laser in optical dielectric films

    Institute of Scientific and Technical Information of China (English)

    Caihua Huang; Yiyu Xue; Zhilin Xia; Yuanan Zhao; Fangfang Yang; Peitao Guo

    2009-01-01

    Both the nature of avalanche ionization (AI) and the role of multi-photon ionization (MPI) in the studies of laser-induced damage have remained controversial up to now. According to the model proposed by Stuart et al., we study the role of MPI and AI in laser-induced damage in two dielectric films, fused silica (FS) and barium aluminum borosilicate (BBS), irradiated by 780-nm laser pulse with the pulse width range of 0.01 鈥? 5 ps. The effects of MPI and initial electron density on seed electron generation are numerically analyzed. For FS, laser-induced damage is dominated by AI for the entire pulse width regime due to the wider band-gap. While for BBS, MPI becomes the leading power in damage for the pulse width r less than about 0.03 ps. MPI may result in a sharp rise of threshold fluence Fth on 蟿, and AI may lead to a mild increase or even a constant value of Fth on 蟿. MPI serves the production of seed electrons for AI when the electron density for AI is approached or exceeded before the end of MPI. This also means that the effect of initial electron can be neglected when MPI dominates the seed electron generation. The threshold fluence Fth decreases with the increasing initial electron density when the latter exceeds a certain critical value.

  17. Growth kinetics and complex characterization of PECVD SiO x N y dielectric films

    Science.gov (United States)

    Pereyaslavtsev, A.; Sokolov, I.

    2016-05-01

    This paper is devoted to the study of patterns of dielectric film growth depending on the parameters of the plasma chemical deposition process. The study has revealed the influence of the basic reagents’ content on the changes in surface morphology, breakdown voltage and stoichiometry (transition to the intermediate oxidation states of silicon) of dielectric films. Furthermore, an exponential pattern of the change in the films’ growth rate has been registered. When increasing the N/Si ratio, a nonlinear dependence of the change in the dielectric films’ band gap has been recorded. When increasing the SiH4/N2O ratio, a shift of the peak positions of the interband interactions relative to the band gap boundaries has been detected. The dataset on breakdown voltage and band structure suggests a certain optimum of barrier properties of SiO x N y dielectric films at the basic reagents’ ratio close to 0.3-0.4.

  18. Converting surface plasmon polaritons into spatial bending beams through graded dielectric rectangles over metal film

    Science.gov (United States)

    Li, Hui; Xu, Yongzheng; Wang, Gang; Fu, Tong; Wang, Li; Zhang, Zhongyue

    2017-01-01

    Spatial bending beams, which preserve their spatial shape while propagating along curved trajectories in free space, offer important application in the fields of fiber sensor, optical trapping, and micromanipulation. In this work, two slits are designed on a metal film to excite surface plasmon polaritons (SPPs), and a group of dielectric rectangles over metal film is theoretically proposed to directly convert SPPs into spatial beams showing arbitrary bending. The appropriate locations of the dielectric rectangles are calculated by phase-modulation method. Transverse acceleration and nondiffraction characteristics of spatial bending beams are observed. We further demonstrate that the intensity distribution, shape, and propagation length of spatial beams showing arbitrary bending rely on structural parameters of dielectric rectangles and on the distance between dielectric rectangles and metal film. These findings provide guidance in the design and optimization of bending beam generators.

  19. Electrical and Mechanical Properties of the Dielectric Capacitor Film Based on Polyvinylidene Fluoride and Aromatic Polythiourea

    Science.gov (United States)

    Li, Ya; Fu, Qiong; Li, Lili; Li, Weiping

    2016-10-01

    To obtain the flexible dielectric material suitable for mass produced supercapacitor, blend films based on polyvinylidene fluoride (PVDF) and aromatic polythiourea (ArPTU) were prepared by solution casting. We found that the PVDF/ArPTU blend film is a good energy storage material for capacitors with high breakdown strength and low loss at high filed. The breakdown field of PVDF/ArPTU (90/10) film is more than 700 MV/m, and the maximum released energy density is up to 11 J/cm3 with discharging efficiency above 80%. We also proved that the mechanical property of blend films is much better than that of pure ArPTU film, and the toughness and softness are close to the level of PVDF film. The blend film based on PVDF and ArPTU is a flexible dielectric material in the manufacture of supercapacitor.

  20. SU-8 as Hydrophobic and Dielectric Thin Film in Electrowetting-on-Dielectric Based Microfluidics Device

    OpenAIRE

    Vijay Kumar; N. N. Sharma

    2012-01-01

    Electrowetting-on-dielectric (EWOD) based droplet actuation in microfluidic chip is designed and fabricated. EWOD is used as on-chip micro-pumping scheme for moving fluid digitally in Lab-on-a-chip devices. For enabling this scheme, stacked deposition of thin dielectric and hydrophobic layer in that order between microchannel and electrodes is done. The present paper investigates the potential use of SU-8 as hydrophobic layer in conjunction of acting as dielectric in the device. The objective...

  1. Diffraction radiation from an inhomogeneous dielectric film on the surface of a perfect conductor

    NARCIS (Netherlands)

    Ryazanov, MI; Strikhanov, MN; Tishchenko, AA

    2004-01-01

    Diffraction radiation generated by a charged particle moving uniformly parallel to the surface of a perfect conductor coated with a dielectric film is considered; the thickness of the film is an arbitrary function of coordinates. A particular case is considered when this function is periodic in one

  2. Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

    OpenAIRE

    Bodeux, Romain; Michau, Dominique; Josse, Michaël; Maglione, Mario

    2014-01-01

    International audience; Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO2/SiO2/Si substrates from Ba2LnFeNb4O15 ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk,...

  3. Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

    Institute of Scientific and Technical Information of China (English)

    Liang Wei-Zheng; Ji Yan-Da; Nan Tian-Xiang; Huang Jiang; Zeng Hui-Zhong; Du Hui; Chen Chong-Lin; Lin Yuan

    2012-01-01

    Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition (PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr ~ 400 and tanδ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.

  4. Evaluation of high temperature dielectric films for high voltage power electronic applications

    Science.gov (United States)

    Suthar, J. L.; Laghari, J. R.

    1992-01-01

    Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

  5. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cristea, D., E-mail: daniel.cristea@unitbv.ro [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Crisan, A. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania); Cretu, N. [Electrical Engineering and Applied Physics Department, Transilvania University, 500036 Brasov (Romania); Borges, J. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Lopes, C.; Cunha, L. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710 - 057 Braga (Portugal); Ion, V.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, Lasers Department, “Photonic Processing of Advanced Materials” Group, PO Box MG-16, RO 77125 Magurele-Bucharest (Romania); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Alves, E. [Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 ao km 139,7, 2695-066 Bobadela LRS (Portugal); Apreutesei, M. [MATEIS Laboratory-INSA de Lyon, 21 Avenue Jean Capelle, 69621 Villeurbanne cedex (France); Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134 (France); Munteanu, D. [Department of Materials Science, Transilvania University, 500036 Brasov (Romania)

    2015-11-01

    Highlights: • Tantalum oxynitride thin films have been deposited by magnetron sputtering, in various configurations. • The rising of the reactive gases mixture flow has the consequence of a gradual increase in the non-metallic content in the films, which results in a 10 orders of magnitude resistivity domain. • The higher resistivity films exhibit dielectric constants up to 41 and quality factors up to 70. - Abstract: The main purpose of this work is to present and to interpret the change of electrical properties of Ta{sub x}N{sub y}O{sub z} thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N{sub 2} and O{sub 2}, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, −50 V or −100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance Ta{sub x}N{sub y}O{sub z} films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric Ta{sub x}N{sub y}O{sub z} films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  6. Effect of swift heavy ion irradiation on dielectrics properties of polymer composite films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, N.L. [Physics Department, M.S. University of Baroda, Vadodara 390002 (India)]. E-mail: singhnl_msu@yahoo.com; Qureshi, Anjum [Physics Department, M.S. University of Baroda, Vadodara 390002 (India)]. E-mail: anjumqur@gmail.com; Singh, F. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Avasthi, D.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2007-02-25

    Ferric oxalate was used as organometallics fillers in polyvinyl chloride (PVC) to form polymer matrix composite films at different concentration of filler. These films were irradiated with 80 MeV O{sup 6+} ions at the fluences of 1 x 10{sup 11} and 1 x 10{sup 12} ions/cm{sup 2}. The radiation induced modifications in dielectric properties, microhardness, surface morphology and surface roughness of polymer composite films have been investigated at different concentration (i.e. 5%, 10% and 15%) of filler. It was observed that hardness and electrical conductivity of the films increase with the concentration of the dispersed ferric oxalate and also with the fluence. From the analysis of frequency, f, dependence of dielectric constant, {epsilon}, it has been found that the dielectric response in both pristine and irradiated samples obey the Universal law given by {epsilon} {proportional_to} f {sup n-1}. The dielectric constant/loss is observed to change significantly due to the irradiation. This suggests that ion beam irradiation promotes (i) the metal to polymer bonding and (ii) convert the polymeric structure into hydrogen depleted carbon network. Thus irradiation makes the polymer harder and more conductive. Atomic force microscopy (AFM) shows that average roughness (R {sub a}) of the irradiated films is lower than that of unirradiated films. Surface morphology of irradiated polymer composite films is observed to change. Scanning electron microscopy (SEM) results show that partial agglomeration of fillers in the polymer matrix.

  7. Dielectric properties: A gateway to antibacterial assay-A case study of low-density polyethylene/chitosan composite films.

    Digital Repository Service at National Institute of Oceanography (India)

    Sunilkumar, M.; Gafoor, A.A; Anas, A; Haseena, A; Sujith, A

    The dielectric properties of low-density polyethylene–chitosan composite films were correlated with their antibacterial properties in this work. Films were designed on the molecular level using palm oil as a plasticizer in an internal mixer. Maleic...

  8. Low-κ' dielectric properties of UV-treated bi-axially oriented polypropylene films

    Science.gov (United States)

    Dervos, C. T.; Tarantili, P. A.; Athanassopoulou, M. D.

    2009-07-01

    A 40 µm multilayer bi-axially oriented polypropylene (BOPP) film, was fabricated by the tenter process and its dielectric response was investigated after applying combined action of UV, humidity and heat. Dissipation factor (tan δ) and relative dielectric constant measurements were performed via the capacitance method for frequencies 20Hz-1 GHz. These results show that the relative dielectric constant (κ') reduces towards ultra low values (1.8) with an increasing number of applied UV-condensation cycles without any subsequent increase in the dielectric loss. Having no added physical porosity and absence of fluorine atoms, the irradiated BOPP structures offer significant advantages over poly(tetrafluoroethylene) PTFE due to reduced polarization effects, lower dielectric constant values and chemical stability to the adjacent copper or aluminium conductors. Possible application fields are dry type high-voltage capacitors and insulation within electronic components.

  9. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah H.

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  10. Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

    Science.gov (United States)

    Yu, Yang-Yen; Jiang, Ai-Hua; Lee, Wen-Ya

    2016-11-01

    The organic material soluble polyimide (PI) and organic-inorganic hybrid PI-barium titanate (BaTiO3) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO3 nanoparticles in a PI matrix) were successfully synthesized through a sol-gel process. The effects of various BaTiO3 contents on the hybrid film performance and performance optimization were investigated. Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO3/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. The hybrid materials showed effective dispersion of BaTiO3 nanoparticles in the PI matrix and favorable thermal properties. X-ray diffraction patterns revealed that the BaTiO3 nanoparticles had a perovskite structure. The hybrid films exhibited high formability and planarity. The IBX hybrid dielectric films exhibited tunable insulating properties such as the dielectric constant value and capacitance in ranges of 4.0-8.6 and 9.2-17.5 nF cm-2, respectively. Adding the modified layer caused the decrease of dielectric constant values and capacitances. The modified dielectric layer without cross-linking displayed a hydrophobic surface. The electrical characteristics of the pentacene-based OTFTs were enhanced after the surface modification. The optimal condition for the dielectric layer was 10 wt% hybrid film with the COC-modified layer; moreover, the device exhibited a threshold voltage of 0.12 V, field-effect mobility of 4.32 × 10-1 cm2 V-1 s-1, and on/off current of 8.4 × 107.

  11. Transparent heat insulating coatings on polyester film using chemically-prepared dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Chiba, K.; Sobajima, S.; Yatabe, T.

    1983-03-01

    Dielectric/metal/dielectric coatings have been formed on a polyethylene terephthalate (polyester) film using chemical and physical preparation techniques. Hydrolysis of tetra n-butyl titanate followed by condensation gave rise to a uniform transparent dielectric layer with relatively high refractive index. The metal layer was prepared by vacuum evaporation or dc-magnetron sputtering. Effects of coating parameters including solvents, thickness uniformity and carbon residues on optical properties are discussed. Prepared coatings have exhibited good spectral selectivities, i.e., transparent heat mirror characteristics; solar energy transmittance is 55-76%, and ir-reflectance at 10 micrometer wavelength is 72-97%.

  12. Preparation, Structural and Dielectric Properties of Solution Grown Polyvinyl Alcohol(PVA) Film

    Science.gov (United States)

    Nangia, Rakhi; Shukla, Neeraj K.; Sharma, Ambika

    2017-08-01

    Flexible dielectrics with high permittivity have been investigated extensively due to their applications in electronic industry. In this work, structural and electrical characteristics of polymer based film have been analysed. Poly vinyl alcohol (PVA) film was prepared by solution casting method. X-ray diffraction (XRD) characterization technique is used to investigate the structural properties. The semi-crystalline nature has been determined by the analysis of the obtained XRD pattern. Electrical properties of the synthesized film have been analysed from the C-V and I-V curves obtained at various frequencies and temperatures. Low conductivity values confirm the insulating behaviour of the film. However, it is found that conductivity increases with temperature. Also, the dielectric permittivity is found to be higher at lower frequencies and higher temperatures, that proves PVA to be an excellent dielectric material which can be used in interface electronics. Dielectric behaviour of the film has been explained based on dipole orientations to slow and fast varying electric field. However further engineering can be done to modulate the structural, electrical properties of the film.

  13. Preparation of metal-organic decomposition-derived strontium zirconate dielectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Changhong; Zhu Weiguang; Yu Ting; Chen Xiaofeng; Yao Xi

    2003-04-30

    Metal-organic decomposition-derived SrZrO{sub 3} dielectric thin films were investigated using differential thermal analysis, thermogravimetric analysis, X-ray diffraction, Fourier transform infrared reflectivity spectroscopy and atomic force microscopy to study the mechanism of phase transformation and crystallinity, and were characterized by electric and dielectric properties as well. The phase transformation and crystallinity results show that the film has amorphous structure with carbonate existing when annealed at 550 deg. C; while when annealed at 600 deg. C and above, the carbonate is decomposed and those films crystallize into perovskite phase without preferred orientation. In addition, the electric properties show these films exhibit very low leakage current density and high breakdown strength. Typically, the film annealed at 600 deg. C has the lowest leakage current density of 4.2x10{sup -10} A cm{sup -2} at the field strength of 580 kV cm{sup -1} and the breakdown strength is close to 1.3 MV cm{sup -1}. Moreover, the dielectric properties show that, at room temperature, these films have their dielectric constants higher than 22.0 with very little dispersion in a frequency range from 100 Hz to 1 MHz and are nearly independent of applied dc bias.

  14. Investigation of thickness effects on the dielectric constant barium strontium titanate thin films

    CERN Document Server

    Grattan, L J

    2002-01-01

    The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films was measured and investigated in barium strontium titanate (Ba sub 0 sub . sub 5 Sr sub 0 sub . sub 5 TiO sub 3). The possible mechanisms responsible for this effect are reviewed. Functional measurements were performed on BST thin films, of 7.5 to 950 nm, by incorporating them into capacitor structures with bottom electrodes of strontium ruthenate (SRO) and thermally- evaporated Au top electrodes. A discussion on thin film growth considerations, optimal PLD conditions and the measurement techniques employed in the project is presented. The experimentally determined dielectric constant - thickness profile was fitted using the series capacitor model assuming low dielectric constant interfacial layers in series with the bulk. Consideration of the case where the combined 'dead layer' thickness was close to the total BST thickness revealed that, for this system, the total 'dead layer' thickness had to be less than ...

  15. Sigma-pi molecular dielectric multilayers for low-voltage organic thin-film transistors.

    Science.gov (United States)

    Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J

    2005-03-29

    Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (up to approximately 2,500 nF.cm(-2)), excellent insulating properties (leakage current densities as low as 10(-9) A.cm(-2)), and single-layer dielectric constant (k)of approximately 16. These 3D self-assembled multilayers enable organic thin-film transistor function at very low source-drain, gate, and threshold voltages (organic semiconductors.

  16. SHI induced modification in structural, optical, dielectric and thermal properties of poly ethylene oxide films

    Science.gov (United States)

    Patel, Gnansagar B.; Bhavsar, Shilpa; Singh, N. L.; Singh, F.; Kulriya, P. K.

    2016-07-01

    Poly ethylene oxide (PEO) films were synthesized by solution cast method. These self-standing films were exposed with 60 MeV C+5 ion and 100 MeV Ni+7 ion at different fluences. SHI induced effect was investigated by employing various techniques. The crystalline size decreased upon irradiation as observed from XRD analysis. FTIR analysis reveals the decrement in the peak intensity upon irradiation. Tauc's method was used to determine the optical band gap (Eg), which shows decreasing trends with increase of fluence. The dielectric properties were investigated in the frequency range 10 Hz to 10 MHz for unirradiated and irradiated films. The dielectric constant remains same for the broad-spectrum of frequency and increases at lower frequency. The dielectric loss also moderately influence as a function of frequency due to irradiation. DSC analysis validated the results of XRD. Scanning electron microscopy (SEM) reveals that there is significant change in the surface morphology due to irradiation.

  17. Highly Directional Emission from a Subwavelength Slit in Metal-Dielectric Layered Films

    Institute of Scientific and Technical Information of China (English)

    LI Zu-Bin; TIAN Jian-Guo; ZHOU Wen-Yuan; LIU Zhi-Bo; ZANG Wei-Ping; ZHANG Chun-Ping

    2006-01-01

    @@ The directional light emission from a single subwavelength slit surrounded by periodic grooves in layered films consisting of Ag and transparent dielectric is analysed numerically by the finite difference time domain method.The results show that the transmission through this structure is strongly confined by the modulation of the dielectric film with grooves on the output side. The role of evanescent waves in this phenomenon is discussed.It is the re-diffraction of the evanescent waves (that are generated by the diffraction of the subwavelength slit)caused by the grooves on the dielectric film that leads to the directional transmission. Some suggestions are given to obtain beaming light with high transmittance.

  18. Dielectric and Thermal Properties of Polyimide-Poly(ethylene oxide) Nanofoamed Films

    Science.gov (United States)

    Zhang, Yi-He; Yu, Li; Zhao, Li-Hang; Tong, Wang-Shu; Huang, Hai-Tao; Ke, Shan-Ming; Chan, H. L. W.

    2012-08-01

    Polyimide nanofoamed films have been prepared by incorporating poly(ethylene oxide) (PEO) into poly(amide acid) (PAA) precursors with subsequent imidization of PAA precursors at high temperature. The porous structure, thermal decomposition temperature, and dielectric property of nanofoamed films were investigated by scanning electron microscopy, thermogravimetric analysis, and impedance spectroscopy. Nanopores with sizes around 40 nm to 200 nm were formed in nanofoamed films by pyrolysis of PEO during the imidization progress. The decomposition temperature of nanofoamed films decreased slightly with increasing volume fraction of nanopores and maintained the high decomposition temperature of 499.7 °C when the volume fraction of nanopores was 10.9 %. The dielectric constant of nanofoamed films decreased from 3.4 for pure PI to 2.4 at 103 Hz through the introduction of nanopores with volume fraction of 10.9 %.

  19. New process for preparing complex-shaped dielectric film similar to Mylar

    Science.gov (United States)

    Lagasse, R. R.; Kraynik, A. M.

    1982-02-01

    A new thermoforming/heat-treatment process yields complex-shaped dielectric film having electrical and shrinkage properties similar to those of flat Mylar film. This similarity should extend to other physical properties because the new process is directly analogous to the process used to prepare Mylar. Commercially available poly(ethylene terephthalate) film is formed into a cavity at approx. 110 C and then heat treated at approx. 180 C. A laboratory-scale forming apparatus has produced cylindrically shaped films having depth/diameter ratio approx. 1, a tapered wall-section, and variation in wall thickness of 3X. Evaluation of other forming methods suggest that the production rate and thickness uniformity can be improved with existing technology. Thermal shrinkage at 150 C, 1 kHz dielectric constant from -55 to +70 C, leakage current at 1 kV, and breakdown voltage have been measured for both the complex-shaped film and Mylar.

  20. Dielectric response and novel electromagnetic modes in three-dimensional Dirac semimetal films

    Science.gov (United States)

    Kotov, O. V.; Lozovik, Yu. E.

    2016-06-01

    Using the Kubo formalism we have calculated the local dynamic conductivity of a bulk, i.e., three-dimensional (3D), Dirac semimetal (BDS). We obtain that at frequencies lower than Fermi energy the metallic response in a BDS film manifests in the existence of surface-plasmon polaritons, but at higher frequencies the dielectric response is dominated and it occurs that a BDS film behaves as a dielectric waveguide. At this dielectric regime we predict the existence inside a BDS film of novel electromagnetic modes, a 3D analog of the transverse electric waves in graphene. We also find that the dielectric response manifests as the wide-angle passband in the mid-infrared (IR) transmission spectrum of light incident on a BDS film, which can be used for the interferenceless omnidirectional mid-IR filtering. The tuning of the Fermi level of the system allows us to switch between the metallic and the dielectric regimes and to change the frequency range of the predicted modes. This makes BDSs promising materials for photonics and plasmonics.

  1. Dielectric relaxation of barium strontium titanate and application to thin films for DRAM capacitors

    Science.gov (United States)

    Baniecki, John David

    This thesis examines the issues associated with incorporating the high dielectric constant material Barium Strontium Titanate (BSTO) in to the storage capacitor of a dynamic random access memory (DRAM). The research is focused on two areas: characterizing and understanding the factors that control charge retention in BSTO thin films and modifying the electrical properties using ion implantation. The dielectric relaxation of BSTO thin films deposited by metal-organic chemical vapor deposition (MOCVD) is investigated in the time and frequency domains. It is shown that the frequency dispersion of the complex capacitance of BSTO thin films can be understood in terms of a power-law frequency dependence from 1mHz to 20GHz. From the correspondence between the time and frequency domain measurements, it is concluded that the power-law relaxation currents extend back to the nano second regime of DRAM operation. The temperature, field, and annealing dependence of the dielectric relaxation currents are also investigated and mechanisms for the observed power law relaxation are explored. An equivalent circuit model of a high dielectric constant thin film capacitor is developed based on the electrical measurements and implemented in PSPICE. Excellent agreement is found between the experimental and simulated electrical characteristics showing the utility of the equivalent circuit model in simulating the electrical properties of high dielectric constant thin films. Using the equivalent circuit model, it is shown that the greatest charge loss due to dielectric relaxation occurs during the first read after a refresh time following a write to the opposite logic state for a capacitor that has been written to the same logic state for a long time (opposite state write charge loss). A theoretical closed form expression that is a function of three material parameters is developed which estimates the opposite state write charge loss due to dielectric relaxation. Using the closed form

  2. Broadband dielectric spectroscopy of BPDA/ODA polyimide films

    Science.gov (United States)

    Khazaka, R.; Locatelli, M. L.; Diaham, S.; Bidan, P.; Dupuy, L.; Grosset, G.

    2013-02-01

    Dielectric spectroscopy of a high-temperature photosensitive polyimide was investigated in wide temperature and frequency ranges during heating and cooling cycles (from -150 to 370 °C and from 0.1 to 1 MHz). During the heating phase measurements two sub-glass relaxation processes were observed, noted as γ and β relaxations. The γ relaxation appears at a low temperature (around -60 °C at 1 kHz) with an activation energy of 0.44 eV during the heating phase and disappears during the cooling one, indicating that the peak is initially related to the presence of water in the polyimide films. The β relaxation appears at higher temperatures (around 180 °C at 1 kHz) with a higher activation energy of about 1.5 eV. The β peak location and intensity for low temperatures (between 100 °C and 120 °C) change slightly on comparing the heating and cooling spectra, indicating also the effect of water molecules, which may act as a plasticizer. However, for higher temperatures, the β peak does not show any significant effect of the thermal cycle, and the relaxation is mainly attributed to the non-cooperative relaxation of the polyimide molecules. The ac conductivity (σ‧) values show that the electronic hopping process is influenced by the dynamics of the segmental and macromolecular chains of the polyimide in the γ and β relaxation regions. At high temperatures (>250 °C) a plateau region appears in the ac conductivity allowing the extraction of the dc conductivity values, which are not affected between the heating and cooling measurements. This leads us to conclude that there are no significant morphological or chemical changes in the polyimide even for temperatures higher than its glass transition one under N2 for short periods. For temperatures above 300 °C an increase in the values of relative permittivity is observed and referred to the Maxwell-Wagner-Sillars or to the electrode polarization phenomena. In this range the activation energy of the polarization peak

  3. Effect of substrate temperature on microstructures and dielectric properties of compositionally graded BST thin films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Bai-shun; GUO Tao; ZHANG Tian-jin; WANG Jin-zhao; QUAN Zu-ci

    2006-01-01

    Compositionally graded Ba1-xSrxTiO3 (BST) (x = 0-0.3) thin films were prepared on Pt/Ti/SiO2/Si substrate at different substrate temperatures ranging from 550 ℃ to 650 ℃ by radio-frequency (rf) magnetron sputtering. The effect of substrate temperature on the preferential orientation,microstructures and dielectric properties of compositionally graded BST thin films was investigated by X-ray diffraction,scanning electron microscopy and dielectric frequency spectra,respectively. As the temperature increases,the preferential orientation evolves in the order: randomly orientation→ (111) → highly oriented (111) (α(111) = 60.2%). The surface roughness of the graded BST thin films varies with the substrate temperatures. No visible internal interface in the compositionally graded thin films can be observed in the cross-sectional SEM images. The graded BST thin films deposited at 650 ℃ possess the highest dielectric constant and dielectric loss,which are 408 and 0.013,respectively.

  4. Plasma treatment of polymer dielectric films to improve capacitive energy storage

    Science.gov (United States)

    Yializis, A.; Binder, M.; Mammone, R. J.

    1994-01-01

    Demand for compact instrumentation, portable field equipment, and new electromagnetic weapons is creating a need for new dielectric materials with higher energy storage capabilities. Recognizing the need for higher energy storage capacitors, the Army Research Lab at Fort Monmouth, NJ, initiated a program a year ago to investigate potential methods for increasing the dielectric strength of polyvinylidene difluoride (PVDF) film, which is the highest energy density material commercially available today. Treatment of small area PVDF films in a CF4/O2 plasma showed that the dielectric strength of PVDF films can be increased by as much as 20 percent when treated in a 96 percent CF4/4 percent O2 plasma. This 44 percent increase in energy storage of a PVDF capacitor is significant considering that the treatment can be implemented in a conventional metallizing chamber, with minimum capital investment. The data shows that improved breakdown strength may be unique to PVDF film and the particular CF4/O2 gas mixture, because PVDF film treated with 100 percent CF4, 100 percent O2, Ar gas plasma, and electron irradiation shows no improvement in breakdown strength. Other data presented includes dissipation factor, dielectric constant, and surface tension measurements.

  5. Dielectric Spectroscopy Analyses of SrBi4Ti4O15 Films Obtained from Soft Chemical Solution

    Directory of Open Access Journals (Sweden)

    A. Z. Simões

    2009-01-01

    Full Text Available SrBi4Ti4O15 (SBTi thin films were deposited by the polymeric precursor method on Pt bottom electrodes. The obtained films were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and dielectric spectroscopy analyses. The capacitance-voltage (C-V characteristics of perovskite thin film showed normal ferroelectric behavior. The remanent polarization and coercive fields were 5.4 μC/cm2 and 85 kV/cm, respectively. Dielectric spectroscopy was employed to examine the polycrystalline behavior of ferroelectric material and the mechanisms responsible for the dielectric performance of the thin film.

  6. Influence of Doping Concentration on Dielectric, Optical, and Morphological Properties of PMMA Thin Films

    Directory of Open Access Journals (Sweden)

    Lyly Nyl Ismail

    2012-01-01

    Full Text Available PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA concentration increased. The dielectric loss is in the range of 0.01 ~ –0.01. All samples show dielectric characteristics which have dielectric loss is less than 0.05. The optical properties for thin films were measured at room temperature across 200 ~ 1000 nm wavelength region. All samples are highly transparent. The energy band gaps are in the range of 3.6 eV to 3.9 eV when the PMMA concentration increased. The morphologies of the samples show that all samples are uniform and the surface roughness increased as the concentration increased. From this study, it is known that, the dielectric, optical, and morphology properties were influenced by the amount of PMMA concentration in the solution.

  7. Optically transparent fluoro-containing polyimide films with low dielectric permeability

    Science.gov (United States)

    Kravtsova, V.; Umersakova, M.; Iskakov, R.; Prikhodko, O.; Korobova, N.

    2014-12-01

    Optical, dielectric, thermal, physico-mechanical properties of new fluoro-containing alicyclic polyimides were investigated. High optical transparency in visible and UV ranges of the films with thickness 10-25 μm, which lower boundary was registered at 125-260 nm; as well as reflectivity index being 1.492-1.515 were recorded. Dielectric permeability was characterized with low rates and stability up to 300 °C depending on chemical structure. Polyimides were stable with heating in air up to 320-380 °C. Prepared films show break tensile at 145 MPa with elongation up to 50% due to the excellent film-forming properties. Films based on polyimides with polyaniline composition demonstrates reflectivity index 1.60.

  8. Formation and dielectric properties of anodic oxide films on Zr–Al alloys

    OpenAIRE

    Koyama, Shun; Aoki, Yoshitaka; Nagata, Shinji; Habazaki, Hiroki

    2011-01-01

    Zr–Al alloys containing up to 26 at.% aluminum, prepared by magnetron sputtering, have been anodized in 0.1 mol dm−3 ammonium pentaborate electrolyte, and the structure and dielectric properties of the resultant anodic oxide films have been examined by grazing incidence X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectroscopy, and AC impedance spectroscopy. The anodic oxide film formed on zirconium consists of monoclinic and tetragonal ZrO2 with the fo...

  9. Strain tunability of dielectric and ferroelectric properties in epitaxial lead titanate thin films

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Many distinguished properties of epitaxial ferroelectric thin films can be tunable through the misfit strain.The strain tunability of ferroelectric and dielectric properties in epitaxial lead titanate ultrathin films is numerically investigated by using a phase field model,in which the surface effect of polarization is taken into account.The response of polarization to the applied electric field in the thickness direction is examined with different misfit strains at room temperature.It is found that a co...

  10. Preparation and dielectric characterization of Arrowroot-Chitosan film for microwave phantom applications

    Directory of Open Access Journals (Sweden)

    Ullas G. Kalappura

    2012-12-01

    Full Text Available Arrowroot (Maranta arundinacea and Chitosanare two well-known materials used in medical and scientificapplications. Both materials possess medicinal properties andhave the ability to form thick gels. Chitosan-reinforcedArrowroot film was developed and its dielectric characterizationwas performed at microwave frequencies. Cavity perturbationmethod was used for the measurement. The study proposes theuse of Arrowroot-Chitosan film as phantom materialrepresenting human body counterparts in microwave imagingapplications.

  11. Polymer thin-film transistor based on a high dielectric constant gate insulator

    Institute of Scientific and Technical Information of China (English)

    Lü Wen; Peng Jun-Biao; Yang Kai-Xia; Lan Lin-Feng; Niu Qiao-Li; Cao Yong

    2007-01-01

    In this paper full polymer thin-film transistors (PTFTs) based on Poly (acrylonitrile) (PAN) as the gate dielectric and poly (2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer (6.27) can remarkably reduce the threshold voltage of the transistors to below-3 V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8 × 10-4 cm2/Vs, and on/off current ratio was larger than 102, which was comparable with that of transistors with widely used Poly (4-vinyl phenol) (PVP) or SiO2 as gate dielectrics.

  12. Current Progress of Hf (Zr)-Based High-k Gate Dielectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investigated. Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr)-based high-k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf (Zr)-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.

  13. Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating.

    Science.gov (United States)

    Yoon, Seong Jun; Pak, Kwanyong; Nam, Taewook; Yoon, Alexander; Kim, Hyungjun; Im, Sung Gap; Cho, Byung Jin

    2017-08-22

    Semiconductor integrated circuit chip industries have been striving to introduce porous ultralow-k (ULK) dielectrics into the multilevel interconnection process in order to improve their chip operation speed by reducing capacitance along the signal path. To date, however, highly porous ULK dielectrics (porosity >40%, dielectric constant (k) <2.4) have not been successfully adopted in real devices because the porous nature causes many serious problems, including noncontinuous barrier deposition, penetration of the barrier metal, and reliability issues. Here, a method that allows porous ULK dielectrics to be successfully used with a multilevel interconnection scheme is presented. The surface of the porous ULK dielectric film (k = 2.0, porosity ∼47%) could be completely sealed by a thin (<2 nm) polymer deposited by a multistep initiated chemical vapor deposition (iCVD) process. Using the iCVD process, a thin pore-sealing layer was localized only to the surface of the porous ULK dielectric film, which could minimize the increase of k; the final effective k was less than 2.2, and the penetration of metal barrier precursors into the dielectric film was completely blocked. The pore-sealed ULK dielectric film also exhibited excellent long-term reliability comparable to a dense low-k dielectric film.

  14. Real-time dielectric-film thickness measurement system for plasma processing chamber wall monitoring.

    Science.gov (United States)

    Kim, Jin-Yong; Chung, Chin-Wook

    2015-12-01

    An in-situ real-time processing chamber wall monitoring system was developed. In order to measure the thickness of the dielectric film, two frequencies of small sinusoidal voltage (∼1 V) signals were applied to an electrically floated planar type probe, which is positioned at chamber wall surface, and the amplitudes of the currents and the phase differences between the voltage and current were measured. By using an equivalent sheath circuit model including a sheath capacitance, the dielectric thickness can be obtained. Experiments were performed in various plasma condition, and reliable dielectric film thickness was obtained regardless of the plasma properties. In addition, availability in commercial chamber for plasma enhanced chemical vapor deposition was verified. This study is expected to contribute to the control of etching and deposition processes and optimization of periodic maintenance in semiconductor manufacturing process.

  15. New process for preparing complex-shaped dielectric film similar to Mylar. [Polyethylene terephthalate

    Energy Technology Data Exchange (ETDEWEB)

    Lagasse, R.R.; Kraynik, A.M.

    1982-02-01

    A new thermoforming/heat-treatment process yields complex-shaped dielectric film having electrical and shrinkage properties similar to those of flat Mylar film. This similarity should extend to other physical properties because the new process is directly analogous to the process used to prepare Mylar. Commercially available poly(ethylene terephthalate) film is formed into a cavity at approx. 110/sup 0/C and then heat treated at approx. 180/sup 0/C. A laboratory-scale forming apparatus has produced cylindrically shaped films having depth/diameter ratio approx. 1, a tapered wall-section, and variation in wall thickness of < 3X. Evaluation of other forming methods suggests that the production rate and thickness uniformity can be improved with existing technology. Thermal shrinkage at 150/sup 0/C, 1 kHz dielectric constant from -55 to +70/sup 0/C, leakage current at 1 kV, and breakdown voltage have been measured for both the complex-shaped film and Mylar. These comparative measurements indicate that the complex-shaped film could replace the flat Mylar dielectric currently used in energy-storage capacitors. A complex-shaped energy-storage capacitor could enhance safety in certain nuclear weapon applications by allowing strong-link devices in a firing set to be enclosed by a weak link.

  16. Investigation of high-k yttrium copper titanate thin films as alternative gate dielectrics

    Science.gov (United States)

    Grazia Monteduro, Anna; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Tasco, Vittorianna; Chaitanya Lekshmi, Indira; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D. D.; Maruccio, Giuseppe

    2016-10-01

    Nearly amorphous high-k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10-10 S cm-1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties.

  17. Low-dielectric, nanoporous polyimide thin films prepared from block copolymer templating

    Directory of Open Access Journals (Sweden)

    C. Wang

    2013-08-01

    Full Text Available In this paper, a new method to the preparation of low-dielectric nanoporous polyimide (PI films was addressed, based on the self-assembly structures of PS-b-P4VP/poly(amic acid (PAA, precursor of PI blends. It is found the microphase-separation structure of PS-b-P4VP/PAA is a precondition of the formation of nanoporous structures, which could be achieved by solvent annealing. Nanoporous PI films with spherical pore size of ~11 nm were obtained by thermal imidization followed by the removal of the PS-b-P4VP block copolymer. The porosity of the nanoporous PI films could be controlled by the weight fraction of the PS-b-P4VP block copolymer. The dielectric properties of the nanoporous PI films were studied, and it was found that the introduction of nanopores could effectively reduce the dielectric constant from 3.60 of dense PI films to 2.41 of nanoporous PI films with a porosity of 26%, making it promising in microelectronic devices. The fabrication method described here could be extended to other polymer systems.

  18. Dielectric and Optical Properties of Sputtered Thin Films.

    Science.gov (United States)

    1984-07-01

    potassium dihydrogen phosphate (DKDP) is sandwiched between a dielectric mirror and a transparent electrode on a Car substrate. A .. photoconductive...programmable Fourier plane filters, serial-to-parallel (two-dimensional) buffer memories, page composers for holographic memories, real time

  19. Plasmonic versus dielectric enhancement in thin-film solar cells

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    to its metallic counterpart. We show that the enhanced normalized short-circuit current for a cell with silicon strips can be increased 4 times compared to the best performance for strips of silver, gold, or aluminium. For this particular case, the simple dielectric grating may outperform its plasmonic...

  20. Dielectric properties of crystalline organic molecular films in the limit of zero overlap

    Energy Technology Data Exchange (ETDEWEB)

    D’Avino, Gabriele, E-mail: gabriele.davino@gmail.com [Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, BE-7000 Mons, Belgium and Department of Physics, University of Liège, Allée du 6 Août 17, BE-4000 Liège (Belgium); Vanzo, Davide; Soos, Zoltán G., E-mail: soos@princeton.edu [Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States)

    2016-01-21

    We present the calculation of the static dielectric susceptibility tensor and dipole field sums in thin molecular films in the well-defined limit of zero intermolecular overlap. Microelectrostatic and charge redistribution approaches are applied to study the evolution of dielectric properties from one to a few molecular layers in films of different conjugated molecules with organic electronics applications. Because of the conditional convergence of dipolar interactions, dipole fields depend on the shape of the sample and different values are found in the middle layer of a thick film and in the bulk. The shape dependence is eliminated when depolarization is taken into account, and the dielectric tensor of molecular films converges to the bulk limit within a few molecular layers. We quantify the magnitude of surface effects and interpret general trends among different systems in terms of molecular properties, such as shape, polarizability anisotropy, and supramolecular organization. A connection between atomistic models for molecular dielectrics and simpler theories for polarizable atomic lattices is also provided.

  1. High dielectric, dynamic mechanical and thermal properties of polyimide composite film filled with carbon-coated silver nanowires

    Science.gov (United States)

    Wang, Lisi; Piao, Xiaoyu; Zou, Heng; Wang, Ya; Li, Hengfeng

    2015-01-01

    High dielectric permittivity materials are much desirable in the electric industry. Filling polymer matrix with conductive powders to form percolative composites is one of the most promising methods to achieve high dielectric permittivity. However, they do not always provide high mechanical properties and thermal stability, which seriously limit their applications. In this study, we present the preparation of functional core-shell structured silver nanowires/polyimide (AgNWs/PI) hybrid film with high dielectric permittivity and low loss dielectric. The core-shell structure of AgNWs was characterized by transmission electric microscopy. The dynamical mechanical analysis showed that AgNWs/PI hybrid films had relative high dynamic mechanical properties with storage modules over 1 Gpa. Moreover, the hybrid films exhibited excellent thermal stability with 5 % weight-loss temperature above 500 °C. The dielectric properties of the carbon-coated AgNWs hybrid films were remarkably improved. The maximum dielectric permittivity of hybrid films is 126 at 102 Hz, which was 39 times higher than that of pure PI matrix, while the dielectric loss of that is still remained at a low value. This study showed a new method to improve the dielectric, dynamic mechanical and thermal properties of films.

  2. Dielectric properties of electron irradiated PbZrO3 thin films

    Indian Academy of Sciences (India)

    Shetty Aparna; V M Jali; Ganesh Sanjeev; Jayanta Parui; S B Krupanidhi

    2010-06-01

    The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol–gel technique. The films were (0.62 m thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well crystallized prior to and after electron irradiation. However, local amorphization was observed after irradiation. There is an appreciable change in the dielectric constant after irradiation with different delivered doses. The dielectric loss showed significant frequency dispersion for both unirradiated and electron irradiated films. c was found to shift towards higher temperature with increasing delivered dose. The effect of radiation induced increase of ′() is related to an internal bias field, which is caused by radiation induced charges trapped at grain boundaries. The double butterfly loop is retained even after electron irradiation to the different delivered doses. The broader hysteresis loop seems to be related to radiation induced charges causing an enhanced space charge polarization. Radiation-induced oxygen vacancies do not change the general shape of the AFE hysteresis loop but they increase s of the hysteresis at the electric field forced AFE to FE phase transition. We attribute the changes in the dielectric properties to the structural defects such as oxygen vacancies and radiation induced charges. The shift in c, increase in dielectric constant, broader hysteresis loop, and increase in r can be related to radiation induced charges causing space charge polarization. Double butterfly and hysteresis loops were retained indicative of AFE nature of the films.

  3. SU-8 as Hydrophobic and Dielectric Thin Film in Electrowetting-on-Dielectric Based Microfluidics Device

    Directory of Open Access Journals (Sweden)

    Vijay Kumar

    2012-01-01

    Full Text Available Electrowetting-on-dielectric (EWOD based droplet actuation in microfluidic chip is designed and fabricated. EWOD is used as on-chip micro-pumping scheme for moving fluid digitally in Lab-on-a-chip devices. For enabling this scheme, stacked deposition of thin dielectric and hydrophobic layer in that order between microchannel and electrodes is done. The present paper investigates the potential use of SU-8 as hydrophobic layer in conjunction of acting as dielectric in the device. The objective for the investigation is to lower the cost and a thin simplification in fabrication process of EWOD-based devices. We have done design and optimization of dimensions of electrode array including gap between arrays for EWOD micropump. Design and optimization are carried out in CoventorWare. The designing is followed by fabrication of device and analysis for droplet motion. The fabrication of the device includes array of electrodes over the silicon surface and embedding them in hydrophobic SU-8 layer. Water droplet movement in the order of microliter of spherical shape is demonstrated. It has been shown that an SU-8 microchannel in the current design allows microfluidic flow at tens of voltages comparable with costlier and more complicated to fabricate designs reported in the literature.

  4. Growth of Fluorocarbon Films by Low-Pressure Dielectric Barrier Discharge

    Institute of Scientific and Technical Information of China (English)

    LI Wei; TAN Xiaodong; LIU Dongping; LIU Yanhong; FENG Zhiqing; CHEN Baoxiang

    2008-01-01

    Plasma polymerized fluorocarbon (FC) films have been deposited on silicon sub-strates from dielectric barrier discharge (DBD) plasma of C4Fs at room temperature under a pressure of 25~125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a signifi-cant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.

  5. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    Science.gov (United States)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  6. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  7. Study of dielectric films in superconducting resonators using pulse echo techniques

    Science.gov (United States)

    Ramanayaka, A. N.; Sarabi, B.; Stoutimore, M. J. A.; Osborn, K. D.

    2013-03-01

    Energy absorption by two-level systems (TLS) in amorphous dielectric films is a source of decoherence in superconducting qubits, but their microscopic nature is unknown in specific films. To reveal their nature it is helpful to study their dynamics, which we do by embedding them in the parallel-plate capacitor of a linear resonator that is coupled to probing fields through a coplanar waveguide. Measurements are performed at 4-8 GHz and 25-200 mK on amorphous silicon nitride films. We will report on progress to extract the coherence times, field coupling, and the corresponding distributions of these tunneling states.

  8. High-Pressure Plasma Deposition of a-C:H Films by Dielectric-Barrier Discharge

    Institute of Scientific and Technical Information of China (English)

    刘昌俊; 李阳; 杜海燕; 艾宝都

    2003-01-01

    The fabrication of a-C:H films from methane has been performed using dielectric-barrier discharges at atmospheric pressure. The effect of combined-feed gas, such as carbon dioxide,carbon monoxide or acetylene on the formation of a-C:H films has been investigated. It hasbeen demonstrated that the addition of carbon monoxide or acetylene into methane leads to aremarkable improvement in the fabrication of a-C:H films. The characterization of carbon filmobtained has been conducted using FT-IR, Raman and SEM.

  9. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ndiege, Nicholas [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: ndiege@uiuc.edu; Subramanian, Vaidyanathan [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: ravisv@unr.edu; Shannon, Mark A. [Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green street, Urbana, IL 61801 (United States)], E-mail: mshannon@uiuc.edu; Masel, Richard I. [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 South Mathews Avenue, Urbana, IL 61801 (United States)], E-mail: r-masel@uiuc.edu

    2008-10-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 {mu}m using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC{sub 2}H{sub 5}){sub 5}) vapor on the deposition surface.

  10. Development in Laser Induced Extrinsic Absorption Damage Mechanism of Dielectric Films

    Institute of Scientific and Technical Information of China (English)

    XIA Zhi-Lin; DENG De-Gang; FAN Zheng-Xiu; SHAO Jian-Da

    2006-01-01

    @@ Absorption of host and the temperature-dependence of absorption coefficient have been considered in evaluating temperature distribution in films, when laser pulse irradiates on films. Absorption of dielectric materials experience three stages with the increase of temperature: multi-photon absorption; single photon absorption; metallic absorption. These different absorption mechanisms correspond to different band gap energies of materials, which will decrease when the temperature of materials increases. Evaluating results indicate that absorption of host increases rapidly when the laser pulse will be over. If absorption of host and the temperature-dependence of absorption are considered, the maximal temperatures in films will be increased by a factor of four.

  11. Nanoporous Structure in Low-Dielectric Films with Positronium Annihilation Lifetime Spectroscopy

    Institute of Scientific and Technical Information of China (English)

    HU Yi-Fan; SUN Jia-Ning; D. W. Gidley

    2005-01-01

    @@ We investigate nano-porous structures in thin low-dielectric films, i.e. the pore sizes, distributions, and interconnectivity, by using depth profiled positronium annihilation lifetime spectroscopy (PALS). It is found that PALS has good sensitivity to probe both interconnected and closed pores in the range from 0.3nm to 30nm, even in the film buried beneath a diffusion barrier. A series of low dielectric constant films of organosilicon-silsequioxane with different weight percentages of porogen have been comparatively investigated. The PALS technique can be used to distinguish the open porosity from the closed one, to determine the pore size, and to detect the percolation threshold with the increasing porosity that represents the transition from closed pores to interconnected pores.Furthermore, the pore percolation length can be derived.

  12. Electron radiation effects on time-dependent dielectric breakdown in SiO2 films

    Science.gov (United States)

    Li, S. P.; Maserjian, J.

    1975-01-01

    An experiment testing the effect of ionizing radiation on breakdown characteristics of SiO2 films is presented. Silicon wafers were oxidized and metallized, and a capacitor array was etched into a control sample while the rest were first irradiated with 1 MeV electrons and then etched. Time-dependent dielectric tests were made on all the capacitors, and the average characteristics of 96 capacitors are illustrated graphically. The curves are consistent with the model of holes trapped in the SiO2 film during irradiation leading to a retarding field for positive ion emission and drift toward the interface. It is shown how an externally applied field is reduced by the trapped charge, and that changes in the dielectric breakdown properties of the SiO2 film after irradiation depend on the positive trapped charge near the metal interface.

  13. Mechanism of resonant perfect optical absorption in dielectric film supporting metallic grating structures.

    Science.gov (United States)

    Chen, Xiumei; Yan, Xiaopeng; Li, Ping; Mou, Yongni; Wang, Wenqiang; Guan, Zhiqiang; Xu, Hongxing

    2016-08-22

    The mechanism of resonant perfect optical absorbers is quantitatively revealed by the coupled mode method for the air/grating/dielectric film/air four region system. The sufficient and necessary conditions of the perfect optical absorption are derived from the interface scattering coefficients analyses. The coupling of the Fabry-Perot modes in the grating slits and non-zero order quasi waveguide modes in the dielectric film play a key role for the perfect optical absorption when the light is incident from the grating side. The analytical sufficient and necessary conditions of the perfect optical absorption provide an efficient tool towards geometry design for the perfect optical absorption at the specific wavelengths. The advantages of a widely tunable perfect optical absorption wavelength, a high Q factor and the confined energy loss on metal surfaces make the air/grating/film/air structures promising for applications in sensing, modulation and detection.

  14. Layer-by-layer structured polymer/TiO2 thin film and its gate dielectric application.

    Science.gov (United States)

    Park, Bong Jun; Park, Jae Hoon; Choi, Jong Sun; Choi, Hyoung Jin

    2010-07-01

    Composite materials of the polymer and inorganic dielectric material have been investigated due to synergistic effect of both flexible properties of the polymer and dielectric properties of the inorganic material. In this study, poly(methyl methacrylate-co-methacrylic acid)/titanium dioxide (PMMA-co-MAA/TiO2) bilayer films were fabricated using a spin coating method followed by a self assembled sol-gel process and then examined for a gate dielectric application of the OTFT. Fracture and surface morphologies of the bilayer film on silicon wafer was observed via both SEM and AFM. Dielectric constant of the composite film synthesized was found to be larger than that of pure polymer film. In addition, with pentacene as a conducting layer, device performance of the composite film was characterized, and it was found that the threshold gate voltage was reduced while the field induced current was increased.

  15. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Science.gov (United States)

    Tari, Alireza; Lee, Czang-Ho; Wong, William S.

    2015-07-01

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO2, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiNx, and (3) a PECVD SiOx/SiNx dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the Vo concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiNx (high Vo) and SiO2 (low Vo) had the highest and lowest conductivity, respectively. A PECVD SiOx/SiNx dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  16. Analysis of multilayered, nitrogen-doped aluminum oxide and hafnium oxide dielectric films for wide-temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    DeCerbo, J.N., E-mail: jennifer.decerbo@us.af.mil [United States Air Force Research Laboratory, Aerospace Systems Directorate, 2130 Eighth St., WPAFB, OH 45433 (United States); Bray, K.R. [UES, Inc., 4401 Dayton Xenia Rd., Beavercreek, OH 45432 (United States); Merrett, J.N. [United States Air Force Research Laboratory, Aerospace Systems Directorate, 2130 Eighth St., WPAFB, OH 45433 (United States)

    2015-09-01

    Capacitors with stable dielectric properties across a wide temperature range are a vital component in many power conditioning applications. High breakdown strength and low loss are also important for many applications. In this study, the dielectric properties of multilayer nitrogen-doped aluminum oxide and hafnium oxide films were characterized, comparing their properties to single layer films. The films were found to be stable from − 50 to 200 °C and from 20 Hz to 1 MHz. An order of magnitude decrease in leakage current was observed for the bilayer films. Breakdown strength for the multilayer films increased up to 75%. This concurs with the hypothesis that the addition of dielectric interfaces provides area to trap and dissipate runaway charge moving through the dielectric, thus lowering leakage current and increasing the breakdown strength. - Highlights: • Multilayer dielectric had stable dielectric properties for a wide temperature range. • Leakage current decreased an order of magnitude with layered dielectrics. • Breakdown strength increase of up to 75% was observed with layered dielectrics.

  17. Dielectric parameters and a.c. conductivity of pure and doped poly (methyl methacrylate) films at microwave frequencies

    Indian Academy of Sciences (India)

    Anju Tanwar; K K Gupta; P J Singh; Y K Vijay

    2006-08-01

    Dielectric properties of pure and doped poly (methyl methacrylate) (PMMA) films at microwave frequency, 8.92 GHz, have been studied at 35°C. Iodine, benzoic acid and FeCl3 have been used as dopants. The losses in doped films are found to be larger than in pure PMMA films. The increased losses account for increased a.c. conductivity in doped films. The increase in conductivity is accounted due to creation of additional hopping sites for the charge carriers in doped samples. The dielectric data has also been used to evaluate optical constants, absorption index () and refractive index () of the films.

  18. Characterization and Optical and Dielectric Properties of Polyvinyl Chloride/Silica Nanocomposites Films

    Directory of Open Access Journals (Sweden)

    T. Abdel-Baset

    2016-01-01

    Full Text Available Silica nanoparticles were synthesized by a sol-gel method and mixed with different amounts of polyvinyl chloride (PVC to get nanocomposite films. The samples were characterized by XRD, HR-TEM, SEM, and FTIR. High resolution transmission electron microscopy (HR-TEM proved that the average particle size of the nanosilica is 15 nm. The scanning electron microscopy (SEM showed that the nanosilica was well dispersed on the surface of the PVC films. Fourier Transform Infrared (FTIR spectra for nanocomposite films intimate a significant change in the intensity of the characteristic peaks of the functional group with addition of nanosilica. The optical band gap was found to decrease with the addition of nanosilica while the refractive index increased. The dielectric constant ε′, the dielectric loss modulus M′′, and AC conductivity (σAC were also studied. It was found that ε′ increases with temperature for all samples, clear dielectric α-relaxation observed from dielectric loss M′′ around the glass temperature (Tg, and this could be related to micro-Brownian motion of the main PVC chain. The activation energy was calculated, and the AC conductivity could be a hopping one. The results of this work are discussed and compared with previously obtained data.

  19. Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization

    Energy Technology Data Exchange (ETDEWEB)

    Le Paven, C., E-mail: claire.lepaven@univ-rennes1.fr [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Lu, Y. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Nguyen, H.V. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); CEA LETI, Minatec Campus, 38054 Grenoble (France); Benzerga, R.; Le Gendre, L. [Institut d' Electronique et de Télécommunications de Rennes (IETR, UMR-CNRS 6164), Equipe Matériaux Fonctionnels, IUT Saint Brieuc, Université de Rennes 1, 22000 Saint Brieuc (France); Rioual, S. [Laboratoire de Magnétisme de Brest (EA CNRS 4522), Université de Bretagne Occidentale, 29000 Brest (France); Benzegoutta, D. [Institut des Nanosciences de Paris (INSP, UMR CNRS 7588), Université Pierre et Marie Curie, 75005 Paris (France); Tessier, F.; Cheviré, F. [Institut des Sciences Chimiques de Rennes (ISCR, UMR-CNRS 6226), Equipe Verres et Céramiques, Université de Rennes 1, 35000 Rennes (France); and others

    2014-02-28

    Perovskite lanthanum titanium oxide thin films were deposited on (001) MgO, (001) LaAlO{sub 3} and Pt(111)/TiO{sub 2}/SiO{sub 2}/(001)Si substrates by RF magnetron sputtering, using a La{sub 2}Ti{sub 2}O{sub 7} homemade target sputtered under oxygen reactive plasma. The films deposited at 800 °C display a crystalline growth different than those reported on monoclinic ferroelectric La{sub 2}Ti{sub 2}O{sub 7} films. X-ray photoelectron spectroscopy analysis shows the presence of titanium as Ti{sup 4+} ions, with no trace of Ti{sup 3+}, and provides a La/Ti ratio of 1.02. The depositions being performed from a La{sub 2}Ti{sub 2}O{sub 7} target under oxygen rich plasma, the same composition (La{sub 2}Ti{sub 2}O{sub 7}) is proposed for the deposited films, with an unusual orthorhombic cell and Cmc2{sub 1} space group. The films have a textured growth on MgO and Pt/Si substrates, and are epitaxially grown on LaAlO{sub 3} substrate. The dielectric characterization displays stable values of the dielectric constant and of the losses in the frequency range [0.1–20] GHz. No variation of the dielectric constant has been observed when a DC electric field up to 250 kV/cm was applied, which does not match a classical ferroelectric behavior at high frequencies and room temperature for the proposed La{sub 2}Ti{sub 2}O{sub 7} orthorhombic phase. At 10 GHz and room temperature, the dielectric constant of the obtained La{sub 2}Ti{sub 2}O{sub 7} films is ε ∼ 60 and the losses are low (tanδ < 0.02). - Highlights: • Lanthanum titanium oxide films were deposited by reactive magnetron sputtering. • A La{sub 2}Ti{sub 2}O{sub 7} chemical composition is proposed, with an unusual orthorhombic cell. • At 10 GHz, the dielectric losses are lower than 0.02. • No variation of the dielectric constant is observed under DC electric biasing.

  20. Method of stress and measurement modes for research of thin dielectric films of MIS structures

    Science.gov (United States)

    Andreev, Vladimir V.; Maslovsky, Vladimir M.; Andreev, Dmitrii V.; Stolyarov, Alexander A.

    2016-12-01

    The paper proposes a new method of stress and measurement modes for research of thin dielectric films of MIS structures. The method realizes injection of the most part of charge into gate dielectric in one of stress modes: either current owing through dielectric is constant or voltage applied to gate is constant. In order to acquire an additional information about changing of charge state of MIS structure, the stress condition is interrupted in certain time ranges and during these time ranges the mode, in which structure is, is the mode of measurement. In measurement mode, changing of electric fields at interfaces between dielectric and semiconductor is monitored. By using these data, density of charge, which is accumulated in gate dielectric, and its centroid are calculated. Besides, by using these data, one studies processes of generation and relaxation of charge in dielectric. In order to raise precision of the method and reduce an influence of switching effects in measurement mode, density of measurement current should be much lower than density of stress current.

  1. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  2. Dielectric relaxation analysis and Ac conductivity of polyvinyl alcohol/polyacrylonitrile film

    Science.gov (United States)

    Abdel-Baset, T. A.; Hassen, A.

    2016-10-01

    A film of 0.98 polyvinyl alcohol (PVA)/0.02 Polyacrylonitrile (PAN) has been prepared using casting method. The dielectric properties were measured as function of temperature and frequency. The dielectric permittivity of PVA is considerably enhanced by doping with PAN. Different relaxation processes have been recognized within the studied ranges of temperature and frequency. The frequency temperature superposition (FTS) is well verified. Frequency and temperature dependence of Ac conductivity, σac, were studied. The conduction mechanism of pure PVA and PVA doped with PAN are discussed. The activation energy either for relaxation or conduction was calculated. Comparison with similar polymeric materials is discussed.

  3. Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors.

    Science.gov (United States)

    Shibao, Hideto; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

  4. Thickness dependent electronic structure and morphology of rubrene thin films on metal, semiconductor, and dielectric substrates

    Science.gov (United States)

    Sinha, Sumona; Mukherjee, M.

    2013-08-01

    The evolution of the electronic structure and morphology of rubrene thin films on noble-metal, semiconductor and dielectric substrates have been investigated as a function of thickness of deposited films by using photoelectron spectroscopy and atomic force microscopy. The clean polycrystalline Au and Ag were used as noble-metals, whereas, H passivated and SiO2 coated Si (100) were used as semiconductors and dielectric substrates. Discussion and comparison on interface dipole, energy level alignment, and surface morphology for the four cases are presented. The formation of dipole at metallic interfaces is found to occur due to push back effect. S parameter obtained from the variation of barrier height with the change of work function of the contacting metal indicates moderately weak interaction between rubrene and the metal substrates. The thickness dependent energy level alignment of the physisorbed rubrene films on different substrates is explained by a dielectric model in terms of electrostatic screening of photo-holes or photoemission final state relaxation energy. Films on all the substrates are found to grow following Stranski-Krastnov type growth mode and are more ordered at higher coverage.

  5. Dielectric Scattering Patterns for Efficient Light Trapping in Thin-Film Solar Cells.

    Science.gov (United States)

    van Lare, Claire; Lenzmann, Frank; Verschuuren, Marc A; Polman, Albert

    2015-08-12

    We demonstrate an effective light trapping geometry for thin-film solar cells that is composed of dielectric light scattering nanocavities at the interface between the metal back contact and the semiconductor absorber layer. The geometry is based on resonant Mie scattering. It avoids the Ohmic losses found in metallic (plasmonic) nanopatterns, and the dielectric scatterers are well compatible with nearly all types of thin-film solar cells, including cells produced using high temperature processes. The external quantum efficiency of thin-film a-Si:H solar cells grown on top of a nanopatterned Al-doped ZnO, made using soft imprint lithography, is strongly enhanced in the 550-800 nm spectral band by the dielectric nanoscatterers. Numerical simulations are in good agreement with experimental data and show that resonant light scattering from both the AZO nanostructures and the embedded Si nanostructures are important. The results are generic and can be applied on nearly all thin-film solar cells.

  6. Femtosecond-laser ablation dynamics of dielectrics: basics and applications for thin films

    DEFF Research Database (Denmark)

    Balling, P.; Schou, Jørgen

    2013-01-01

    -field excitation makes it possible to produce films of materials that are transparent to the laser light. Second, the highly localized excitation reduces the emission of larger material particulates. Third, lasers with ultrashort pulses are shown to be particularly useful tools for the production of nanocluster......Laser ablation of dielectrics by ultrashort laser pulses is reviewed. The basic interaction between ultrashort light pulses and the dielectric material is described, and different approaches to the modeling of the femtosecond ablation dynamics are reviewed. Material excitation by ultrashort laser...... can be described by various rate-equation models in combination with different descriptions of the excited electrons. The optical properties of the highly excited dielectric undergo a rapid change during the laser pulse, which must be included in a detailed modeling of the excitations. The material...

  7. Dielectric Performance of Porous Methyl Silsesquioxane/Triacetyl-β-Cyclodextrin Thin Films

    Institute of Scientific and Technical Information of China (English)

    HU Yi-Fan; FU Dan-Rong; ZHANG Ying; ZHANG Fan; TANG Ting

    2007-01-01

    Porous methyl silsesquioxane thin films with low dielectric constant are successfully synthesized by means of the sol-gel spin-coating method. The precursor solutions are prepared by properly mixing the polymer as a matrix with different contents of triacetyl-β-cyclodextrin (TABCD) as a porogen. The chemical structure, dielectric constants, optical constants and void fraction are investigated by the ellipsometric porosimetry, Fourier transform infrared (FTIR) spectroscopy, and other methods. Influences of TABCD and methyl trimethoxysilane (MTMS) on the dielectric properties are discussed. For those samples with higher porogen loading, orientation and electronic polarizations are lower in low and high frequency regions, respectively, because of a considerably smaller number of polar molecules. The FTIR results suggest that high R value (molar ratio of H2 O to MTMS) is more advantageous for formation of cage structures and the cage/network structural ratio increases with the increasing R value.

  8. Electron beam and gamma ray irradiated polymer electrolyte films: Dielectric properties

    Directory of Open Access Journals (Sweden)

    S. Raghu

    2016-04-01

    Full Text Available In this study, polymer electrolyte films were irradiated with electron beam (EB and Gamma ray (GR at 50 and 150 kGy. The induced chemical changes in films due to irradiations have been confirmed from the Fourier Transform Infra red (FT-IR spectra. The X-ray Diffractometry (XRD results show that crystallinity decreases by ∼20% in EB and ∼10% in GR irradiated films respectively compared to non-irradiated film. The micro structural arrangement was investigated by Scanning Electronic Microscopy (SEM and the images reveal that there is a substantial improvement in the surface morphology in irradiated films. The real (ε′ and imaginary (ε″ dielectric constant and AC conductivity are found to increase with increase in irradiation dose. Improved dielectric properties and conductivity (1.74 x 10−4 & 1.15 x 10−4 S/cm, respectively, for EB and GR irradiated films at room temperature after irradiation and it confirm that EB and GR irradiation can be simple and effective route to obtaining highly conductive polymer electrolytes. From this study it is confirm that EB is more effectiveness than GR irradiation.

  9. Dielectric Function and Critical Point of GeSbTe Pseudo-binary Compound Thin Films

    Science.gov (United States)

    Lee, Hosun; Park, Jun-Woo; Kang, Youn-Seon; Lee, Tae-Yon; Suh, Dong-Seok; Kim, Ki-Joon; Kim, Cheol Kyu; Kang, Yoon Ho; da Silva, Juarez L. F.

    2009-03-01

    We measure the dielectric functions of GeSbTe pseudo-binary thin films by using spectroscopic ellipsometry. We anneal the thin films at various temperatures. According to x-ray diffraction, the as-grown thin films are amorphous and the annealed films have metastable and stable crystalline phases. By using standard critical point model, we obtain the accurate values of the energy gap of the amorphous phase as well as the critical point energies of the crystalline thin films. The critical point energies are compared to the band gap energies determined by the method of linear extrapolation of the optical absorption. As the Sb to Ge atomic ratio increases, the optical (band) gap energy of amorphous (crystalline) phase decreases. Standard critical point fitting show several higher band gaps. The electronic band structures and the dielectric functions of the thin films are calculated by using density functional theory and are compared to the measured ones. The band structure calculations show in stable phase that GeTe, Ge2Sb2Te5, and Ge1Sb2Te4 have indirect gap whereas Ge1Sb4Te7 and Sb2Te3 have direct gap. The measured indirect band gap energies match well with the electronic band structure calculations.

  10. Interferometric sensing platform with dielectric nanostructured thin films.

    Science.gov (United States)

    Celo, D; Post, E; Summers, M; Smy, T; Brett, M J; Albert, J

    2009-04-13

    A new interferometer-based optical sensing platform with nanostructured thin films of ZrO2 or TiO2 as sensing environment has been developed. With the application of an IC compatible Si(3)N(4) waveguide technology, Mach-Zehnder interferometer devices have been fabricated. The application of the glancing angle deposition technique allowed fabrication of nanostructured thin films as the optical sensing environment. Sensing ability of fabricated devices has been demonstrated through the refractive index measurement of a known gas. The transmission spectra and time response measurements have demonstrated a maximum phase shift of Delta phi=pi/10 and a |Delta P(out)|=0.65 dBm. Devices with TiO2 film on the sensing region performed much better than devices with ZrO2, with sensitivity twice as high.

  11. Method for fabrication of ceramic dielectric films on copper foils

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

    2017-06-14

    The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.

  12. Nonlinear dielectric properties of planar structures based on ferroelectric betaine phosphite films

    Science.gov (United States)

    Balashova, E. V.; Krichevtsov, B. B.; Svinarev, F. B.; Yurko, E. I.

    2014-02-01

    Ferroelectric films of partly deuterated betaine phosphite are grown on NdGaO3(001) substrates with an interdigitated system of electrodes on their surfaces by evaporation at room temperature. These films have a high capacitance in the ferroelectric phase transition range. The dielectric nonlinearity of the grown structures is studied in small-signal and strong-signal response modes and in the intermediate region between these two modes by measuring the capacitance in a dc bias field, dielectric hysteresis loops, and the Fourier spectra of an output signal in the Sawyer-Tower circuit. In the phase transition range, the capacitance control ratio at a bias voltage U bias = 40 V is K ≅ 7. The dielectric nonlinearity of the structures in the paraelectric phase is described by the Landau theory of second-order phase transitions. The additional contribution to the nonlinearity in the ferroelectric phase is related to the motion of domain walls and manifests itself when the input signal amplitude is higher than U st ˜ 0.7-1.0 V. The relaxation times of domain walls are determined from an analysis of the frequency dependences of the dielectric hysteresis.

  13. Carbon nanotube transistors with graphene oxide films as gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

  14. Oxygen sensitivity of perovskite-type dielectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hara, Toru [Corporate Technology Planning Department, Research and Development Laboratory, Taiyo Yuden Co., Ltd., 8-1 Sakae-cho, Takasaki, Gunma 370-8522 (Japan)], E-mail: t-hara@jty.yuden.co.jp; Ishiguro, Takashi [Corporate Technology Planning Department, Research and Development Laboratory, Taiyo Yuden Co., Ltd., 8-1 Sakae-cho, Takasaki, Gunma 370-8522 (Japan); Wakiya, Naoki [Department of Materials Science, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu City, Shizuoka 432-8561 (Japan); Shinozaki, Kazuo [Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro, Tokyo 152-8550 (Japan)

    2009-04-15

    We have considered perovskite-type dielectric materials as promising candidates for use as highly sensitive oxygen sensors because of the indispensable interaction between ionic polarization in perovskites and adsorbed oxygen on the perovskite surface. In this study, a gas calibration system equipped with a ZrO{sub 2}-based oxygen pump (SIOC-200C, STLAB, Japan) was used. Among the materials studied, Cr:SrTiO{sub 3} shows sufficient sensitivity to detect residual oxygen in helium ambient at ppb levels. In contrast to Cr:SrTiO{sub 3}, Cr:BaTiO{sub 3} shows no oxygen sensitivity. The merits of Cr:SrTiO{sub 3} might be attributed to the coexistence of large and small polarons. Perovskite-based sensor is expected to provide a solution for real-time monitoring of residual oxygen during semiconductor manufacturing.

  15. Method for fabrication of ceramic dielectric films on copper foils

    Science.gov (United States)

    Ma, Beihai; Narayanan, Manoj; Dorris, Stephen E.; Balachandran, Uthamalingam

    2015-03-10

    The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250.degree. C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450.degree. C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750.degree. C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.

  16. Nanomechanical probing of thin-film dielectric elastomer transducers

    Science.gov (United States)

    Osmani, Bekim; Seifi, Saman; Park, Harold S.; Leung, Vanessa; Töpper, Tino; Müller, Bert

    2017-08-01

    Dielectric elastomer transducers (DETs) have attracted interest as generators, actuators, sensors, and even as self-sensing actuators for applications in medicine, soft robotics, and microfluidics. Their performance crucially depends on the elastic properties of the electrode-elastomer sandwich structure. The compressive displacement of a single-layer DET can be easily measured using atomic force microscopy (AFM) in the contact mode. While polymers used as dielectric elastomers are known to exhibit significant mechanical stiffening for large strains, their mechanical properties when subjected to voltages are not well understood. To examine this effect, we measured the depths of 400 nanoindentations as a function of the applied electric field using a spherical AFM probe with a radius of (522 ± 4) nm. Employing a field as low as 20 V/μm, the indentation depths increased by 42% at a load of 100 nN with respect to the field-free condition, implying an electromechanically driven elastic softening of the DET. This at-a-glance surprising experimental result agrees with related nonlinear, dynamic finite element model simulations. Furthermore, the pull-off forces rose from (23.0 ± 0.4) to (49.0 ± 0.7) nN implying a nanoindentation imprint after unloading. This embossing effect is explained by the remaining charges at the indentation site. The root-mean-square roughness of the Au electrode raised by 11% upon increasing the field from zero to 12 V/μm, demonstrating that the electrode's morphology change is an undervalued factor in the fabrication of DET structures.

  17. Spectroscopic studies of low dielectric constant fluorinated amorphous carbon films for ULSI integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Y.; Yang, H. [Sharp Microelectronics Technology, Camas, WA (United States); Guo, J.; Sathe, C.; Agui, A.; Nordgren, J. [Uppsala Univ. (Sweden). Physics Dept.

    1998-12-31

    Performance of future generations of integrated circuits will be limited by the RC delay caused by on-chip interconnections. Overcoming this limitation requires the deployment of new high conductivity metals such as copper and low dielectric constant intermetal dielectrics (IMD). Fluorinated amorphous carbon (a-CFx) is a promising candidate for replacing SiO{sub 2} as the IMD. In this paper the authors investigated the structure and electronic properties of a-CFx thin films using high-resolution x-ray absorption, emission, and photoelectron spectroscopy. The composition and local bonding information were obtained and correlated with deposition conditions. The data suggest that the structure of the a-CFx is mostly of carbon rings and CF{sub 2} chains cross-linked with C atoms. The effects of growth temperature on the structure and the thermal stability of the film are discussed.

  18. High Performance Polymer Film Dielectrics for Air Force Wide-Temperature Power Electronics Applications (Preprint)

    Science.gov (United States)

    2009-02-01

    perform, display, or disclose the work. 14. ABSTRACT Air Force currently has a strong need for the development of compact capacitors which are... capacitors typically use polycarbonate (PC) dielectric films in wound capacitors for operation from -55 ºC to 125 ºC, future power electronic systems would...such as fluorinated polybenzoxazoles (6F-PBO) and fluorenyl polyesters incorporating diamond-like hydrocarbon units (FDAPE). The discussion will be

  19. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs.

  20. Experimental study on surface modification of PET films under bipolar nanosecond-pulse dielectric barrier discharge in atmospheric air

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yunfei [State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049 (China); Su, Chunqiang [Xi’an High Voltage Apparatus Research Institute, Xi’an 710077 (China); Ren, Xiang; Fan, Chuan; Zhou, Wenwu [State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Feng [School of Electrical and Information Engineering, Hunan University, Changsha 410082 (China); Ding, Weidong, E-mail: wdding@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049 (China)

    2014-09-15

    Highlights: • Homogeneous DBD is generated under bipolar nanosecond pulse in atmospheric air. • Effects of surface modification under homogeneous DBD are discussed. • Dielectric properties of the PET films are fully studied from relative dielectric constant ε{sub r}, dielectric loss tangent tan δ and breakdown voltages V{sub b}. • Oxygen-containing polar groups are considered to be the most essential reason for dielectric property changes. - Abstract: Dielectric barrier discharge (DBD) is widely used for surface modification of polymer films. In this paper, DBD characteristics under bipolar repetitive frequency nanosecond pulse in atmospheric air are studied and surface properties of polyethylene terephthalate films under homogeneous DBD and filamentary DBD modification are compared through scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and dielectric test equipment. It is found that the discharge is homogeneous when gap spacing d is less than 1.2 mm and filamentary when d is within the range of 3.0 mm to 5.8 mm. SEM pictures reveal that films under homogeneous DBD present a smooth surface while intensive “gully-like” etches appear on the surface of the films under filamentary DBD, which can result in local insulation defects and is disadvantageous to surface modification. It is found from the XPS analysis that a number of oxygen-containing polar groups are introduced onto the surface of the film modified by homogeneous DBD compared with the untreated one. Experimental results for dielectric properties indicate that the three parameters: relative dielectric constant ε{sub r}, dielectric loss tangent tan δ and breakdown voltages V{sub b} are all changed in different degree after surface modification. And possible reason for the phenomenon is discussed.

  1. Multi-Objective Optimization of Thin-Film Silicon Solar Cells with Metallic and Dielectric Nanoparticles

    Directory of Open Access Journals (Sweden)

    Giovanni Aiello

    2017-01-01

    Full Text Available Thin-film solar cells enable a strong reduction of the amount of silicon needed to produce photovoltaic panels but their efficiency lowers. Placing metallic or dielectric nanoparticles over the silicon substrate increases the light trapping into the panel thanks to the plasmonic scattering from nanoparticles at the surface of the cell. The goal of this paper is to optimize the geometry of a thin-film solar cell with silver and silica nanoparticles in order to improve its efficiency, taking into account the amount of silver. An efficient evolutionary algorithm is applied to perform the optimization with a reduced computing time.

  2. SHI induced modification in structural, optical, dielectric and thermal properties of poly ethylene oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Gnansagar B.; Bhavsar, Shilpa [Department of Physics, The M.S. University of Baroda, Vadodara 390002 (India); Singh, N.L., E-mail: nl.singh-phy@msubaroda.ac.in [Department of Physics, The M.S. University of Baroda, Vadodara 390002 (India); Singh, F.; Kulriya, P.K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2016-07-15

    Poly ethylene oxide (PEO) films were synthesized by solution cast method. These self-standing films were exposed with 60 MeV C{sup +5} ion and 100 MeV Ni{sup +7} ion at different fluences. SHI induced effect was investigated by employing various techniques. The crystalline size decreased upon irradiation as observed from XRD analysis. FTIR analysis reveals the decrement in the peak intensity upon irradiation. Tauc’s method was used to determine the optical band gap (E{sub g}), which shows decreasing trends with increase of fluence. The dielectric properties were investigated in the frequency range 10 Hz to 10 MHz for unirradiated and irradiated films. The dielectric constant remains same for the broad-spectrum of frequency and increases at lower frequency. The dielectric loss also moderately influence as a function of frequency due to irradiation. DSC analysis validated the results of XRD. Scanning electron microscopy (SEM) reveals that there is significant change in the surface morphology due to irradiation.

  3. Influence of titanium chloride addition on the optical and dielectric properties of PVA films

    Energy Technology Data Exchange (ETDEWEB)

    Abdelaziz, M., E-mail: mabdelaziz62@yahoo.co [Science Department, Community College of Riyadh, King Saudi University, P.O. Box 28095, Riyadh 11437 (Saudi Arabia); Physics Department, Faculty of Sciences, Mansoura University, Mansoura 35516 (Egypt); Ghannam, Magdy M. [Physics and Astronomy Department, Faculty of Science, King Saudi University, P.O. Box 2454, Riyadh 11451 (Saudi Arabia)

    2010-02-01

    Polymeric films based on polyvinyl alcohol (PVA) doped with titanium chloride (TiCl{sub 3}) at different weight percent ratios were prepared using the solvent cast technique. The structural properties of these polymeric films are examined by XRD and FTIR studies. The complexation of the dopant with the polymer was confirmed by FTIR studies. The XRD pattern reveals that the amorphous domains of PVA polymer matrix increased with raising the TiCl{sub 3} content. The optical properties of these polymeric films were examined by optical absorption and emission spectroscopy. Electrical conductivity was measured at room temperature of pure PVA and PVA doped with different concentrations of TiCl{sub 3} from 20 Hz to 3 MHz. The conductivity was found to increase with the increase in dopant concentration. The dielectric constant (epsilon') indicates a strong dielectric dispersion in the studied frequency range and increases as dopant content increases. This increase in both sigma and epsilon' is attributed to the increase in the localized charges distribution. Moreover, a loss peak was identified in the dielectric loss spectra and it is attributed to the orientation of polar groups.

  4. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  5. Investigation of Plasma Polymerized Maleic Anhydride Film in a Middle Frequency Dielectric Barrier Discharge

    Institute of Scientific and Technical Information of China (English)

    TANG Wenjie; CHEN Qiang; ZHANG Yuefei; GE Yuanjing

    2008-01-01

    Plasma polymerized maleic anhydride (MA) was carried out by using maleic anhydride supersaturated ethanol solution as a precursor in a dielectric barrier discharge (DBD). The film properties were characterized by water contact angle (WCA), Fourier transfer infrared (FTIR), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) analysis, and a thickness profilometer. The influence of the processing parameters on the film properties such as the power frequency, and polymerization zone was investigated. The results show that anhydride group incorporated into the growing films is favorable at the frequency of 80 kHz and working pressure of 50 Pa. The poly (maleic anhydride) film is uniform and compact at an average deposition rate of 8 nm/min.

  6. Reel-to-Reel Atmospheric Pressure Dielectric Barrier Discharge (DBD Plasma Treatment of Polypropylene Films

    Directory of Open Access Journals (Sweden)

    Lukas JW Seidelmann

    2017-03-01

    Full Text Available Atmospheric pressure plasma treatment of the surface of a polypropylene film can significantly increase its surface energy and, thereby improve the printability of the film. A laboratory-scale dielectric barrier discharge (DBD system has therefore been developed, which simulates the electrode configuration and reel-to-reel web transport mechanism used in a typical industrial-scale system. By treating the polypropylene in a nitrogen discharge, we have shown that the water contact angle could be reduced by as much as 40° compared to the untreated film, corresponding to an increase in surface energy of 14 mNm−1. Ink pull-off tests showed that the DBD plasma treatment resulted in excellent adhesion of solvent-based inks to the polypropylene film.

  7. Structural, Optical, and Dielectric Properties of Azure B Thin Films and Impact of Thermal Annealing

    Science.gov (United States)

    Zeyada, H. M.; Zidan, H. M.; Abdelghany, A. M.; Abbas, I.

    2017-03-01

    Thin films of azure B (AB) have been prepared by thermal evaporation. Structural, optical, and dielectric characteristics of as-prepared and annealed samples were studied. AB is polycrystalline in as-synthesized powder form. Detailed x-ray diffraction studies showed amorphous structure for pristine and annealed films. Fourier-transform infrared vibrational spectroscopy indicated minor changes in molecular bonds of AB thin films either after deposition or after thermal annealing. Optical transmittance and reflection spectra of prepared thin films were studied at nearly normal light incidence in the spectral range from 200 nm to 2500 nm, showing marked changes without new peaks. Annealing increased the absorption coefficient and decreased the optical bandgap. Onset and optical energy gaps of pristine films were found to obey indirect allowed transition with values of 1.10 eV and 2.64 eV, respectively. Annealing decreased the onset and optical energy gaps to 1.0 eV and 2.57 eV, respectively. The dispersion parameters before and after annealing are discussed in terms of a single-oscillator model. The spectra of the dielectric constants (ɛ 1, ɛ 2) were found to depend on the annealing temperature in addition to the incident photon energy.

  8. Systematic experimental study of pure shear type dielectric elastomer membranes with different electrode and film thicknesses

    Science.gov (United States)

    Hodgins, M.; Seelecke, S.

    2016-09-01

    An approach to reduce the voltage required for dielectric elastomer actuators is to reduce film thickness. However, if the electrode thickness is not similarly reduced, the electrode’s mechanical behavior can increasingly and negatively impact the overall actuator behavior. This effect is yet to be studied and quantified for pure shear type specimens; a type recommended in a recent DE standardization journal publication. Therefore, in this work, using pure shear specimens, a comparative study of membrane actuators of different film thickness (20, 50 and 100 μm) is performed. Electrodes of different thicknesses are screen printed and tested in a uniaxial test device. The stiffening effect due to the solid-state electrodes is demonstrated by performing force-elongation tests for specimens with and without electrodes. Additionally the importance of thin electrodes (relative to film thickness) was demonstrated through a number of electromechanical tests. Isotonic tests revealed a lower electro-mechanical sensitivity for the 20 μm film when compared with the 50 and 100 μm films. This was attributed to the relatively thick electrodes. Best actuation results were achieved when the total electrode thickness was at least 15x thinner than the dielectric membrane thickness.

  9. Statistical analysis of absorptive laser damage in dielectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Budgor, A.B.; Luria-Budgor, K.F.

    1978-09-11

    The Weibull distribution arises as an example of the theory of extreme events. It is commonly used to fit statistical data arising in the failure analysis of electrical components and in DC breakdown of materials. This distribution is employed to analyze time-to-damage and intensity-to-damage statistics obtained when irradiating thin film coated samples of SiO/sub 2/, ZrO/sub 2/, and Al/sub 2/O/sub 3/ with tightly focused laser beams. The data used is furnished by Milam. The fit to the data is excellent; and least squared correlation coefficients greater than 0.9 are often obtained.

  10. Poly(aryl-ether-ether-ketone) as a Possible Metalized Film Capacitor Dielectric: Accurate Description of the Band Gap Through Ab Initio Calculation

    Science.gov (United States)

    2014-12-01

    Poly(aryl-ether-ether-ketone) as a Possible Metalized Film Capacitor Dielectric: Accurate Description of the Band Gap Through Ab Initio...Possible Metalized Film Capacitor Dielectric: Accurate Description of the Band Gap Through Ab Initio Calculation Janet Ho and Marco Olguin Sensors...a Possible Metalized Film Capacitor Dielectric: Accurate Description of the Band Gap Through Ab Initio Calculation 5a. CONTRACT NUMBER 5b. GRANT

  11. Temperature effect on low-k dielectric thin films studied by ERDA

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, Jens [Uppsala Univ. (Sweden); Possnert, Göran [Uppsala Univ. (Sweden); Zhang, Yanwen [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2008-09-23

    Low-k dielectric materials are becoming increasingly interesting as alternative to SiO2 with device geometries shrinking beyond the 65 nm technology node. At elevated temperatures hydrogen migration becomes an important degradation mechanism for conductivity breakdown in semiconductor devices. The possibility of hydrogen release during the fabrication process is, therefore, of great interest in the understanding of device reliability. In this study, various low-k dielectric films were subjected to thermal annealing at temperatures that are generally used for device fabrication. Elastic recoil detection analysis (ERDA) was used to investigate compositional changes and hydrogen redistribution in thin films of plasma-enhanced tetraethylortho-silicate (PETEOS), phosphorus doped silicon glass (PSG), silicon nitride (SiN) and silicon oxynitride (SiON). Except for an initial hydrogen release from the surface region in films of PETEOS and PSG, the results indicate that the elemental composition of the films was stable for at least 2 hours at 450°C.

  12. SIMS study of Cu trapping and migration in low-k dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Li Yupu; Hunter, Jerry; Tate, Tom J

    2004-06-15

    A 545 nm thick low-k dielectric film was implanted at room temperature with 50 keV {sup 63}Cu{sup +} to a dose of 1.0x10{sup 14} atoms/cm{sup 2}. The film is a SiO{sub x}-based material and doped with about 8 at.% of flourine. Analyses by secondary-ion mass spectrometry show that Cu is fast diffuser in the low-k film, and after the RTA anneals Cu has redistributed within the film and some Cu has migrated to the interface between the low-k film and Si substrate. At 800 deg. C RTA, the apparent 'diffusion' coefficient in the implanted film, D{sub A}, is estimated as {approx}1.5x10{sup -9} cm{sup 2}/s. The 1100 deg. C RTA sample was re-analysed after stripping the low-k film and the result showed that 4.0x10{sup 12} atoms/cm{sup 2} Cu had moved into the silicon substrate to a depth of about 170 nm.

  13. Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films

    Indian Academy of Sciences (India)

    Ziaul Raza Khan; M Zulfequar; Mohd Shahid Khan

    2012-04-01

    Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 × 10-5 torr. The CdTe thin films were characterized by X-ray diffraction (XRD), UV–VIS–NIR, photoluminescence spectroscopy and scanning electron microscopy (SEM). X-ray diffraction results showed that the films were polycrystalline with cubic structure and had preferred growth of grains along the (111) crystallographic direction. Scanning electron micrographs showed that the growth of crystallites of comparable size on both the substrates. At the room temperature, photoluminescence spectra of the films on both the substrates showed sharp peaks with a maximum at 805 nm. This band showed significant narrowing suggesting that it originates from the transitions involving grain boundary defects. The refractive index of CdTe thin films was calculated using interference pattern of transmission spectra. The optical band gap of thin films was found to allow direct transition with energy gap of 1.47–1.50 eV. a.c. conductivity of CdTe thin films was found to increase with the increase in frequency whereas dielectric constant was observed to decrease with the increase in frequency.

  14. Influence of La-Mn-Al Co-Doping on Dielectric Properties and Structure of BST Thick Film

    Institute of Scientific and Technical Information of China (English)

    Mao-Yan Fan; Sheng-Lin Jiang

    2009-01-01

    A new sol-gel process is applied to fabricate the BST (BaxSr1(xTiO3) sol and nano-powder of La-Mn-Al co-doping with Ba/Sr ratio 65/35, and the BST thick film is prepared in the Pt/Ti/SiO2/Si substrate. The powder and thick film are characterized by X-ray diffraction and transmission electron microscope. The influence of La-Mn-Al co-doping on the dielectric properties and micro-structure of BST thick film is analyzed. The results show that the La, Mn, and Al ions can take an obvious restraint on the growth of BaSrTiO3 grains. The polycrystalline particles come into being during the crystallization of thick film, which may improve the uniformity and compactness of thick film. The influence of unequal-valence and doping amount on the leakage current, dielectric loss, and dielectric property are mainly discussed. The dielectric constant and dielectric loss of thick film are 1200 and 0.03, respectively, in the case of 1mol% La doping, 2mol% Mn doping, and 1mol% Al doping.

  15. Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors

    Science.gov (United States)

    Jiang, Guixia; Liu, Ao; Liu, Guoxia; Zhu, Chundan; Meng, You; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-10-01

    Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.

  16. The effect of different electrode structures on the dielectric properties of lanthanum-doped lead titanate ferroelectric thin films

    Institute of Scientific and Technical Information of China (English)

    LIU Hong; PU Zhaohui; ZHU Xiaohong; XIAO Dingquan; ZHU Jianguo

    2007-01-01

    Lanthanum-doped lead titanate[(Pb0.9,La0.1)TiO3,PLT10]ferroelectric thin films were grown on Si(100)and Pt/Ti/SiO2/Si(100)substrates by radio frequency(RF)magnetron sputtering.The crystalline properties of PLT10 films were studied by X-ray diffractometry(XRD).Photolithographic technique was applied to fabricate the interdigital electrodes on PLT10 thin films on Si(100)substrates.The dielectric properties of PLT10 thin films with different electrodes were measured.At room temperature and 1 kHz testing frequency,the dielectric constant of the PLT10 min film with interdigital electrodes is 386.ThC dielectric constant of the PLT10 thin film fabricated under the same technological conditions with parallel plate electrodes structure is 365,while the dielectric constant and loss of the PLT10 thin film with interdigital electrodes are decreased faster than those of the film with parallel plate electrodes with increasing frequency.This is because more influences of interface state are introduced due to the interdigital electrode configuration.

  17. Quantum-dot size and thin-film dielectric constant: precision measurement and disparity with simple models.

    Science.gov (United States)

    Grinolds, Darcy D W; Brown, Patrick R; Harris, Daniel K; Bulovic, Vladimir; Bawendi, Moungi G

    2015-01-14

    We study the dielectric constant of lead sulfide quantum dot (QD) films as a function of the volume fraction of QDs by varying the QD size and keeping the ligand constant. We create a reliable QD sizing curve using small-angle X-ray scattering (SAXS), thin-film SAXS to extract a pair-distribution function for QD spacing, and a stacked-capacitor geometry to measure the capacitance of the thin film. Our data support a reduced dielectric constant in nanoparticles.

  18. Dielectric behavior and phase transition of perovskite PMN-PT films

    Energy Technology Data Exchange (ETDEWEB)

    Fan Huiqing; Chen Jin, E-mail: hqfan3@163.co [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China)

    2010-05-01

    The dielectric properties of perovskite relaxor ferroelectrics 0.80Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.20PbTiO{sub 3} (0.80PMN-0.20PT) thick films fabricated by electrophoretic deposition were investigated as a function of temperature and frequency. The phase transformation of 0.80PMN-0.20PT thick films has two different kinds of phase transition: one is a diffused phase transition around the temperature of dielectric permittivity maxima and the other is a first-order transition from frequency dispersion relaxor ferroelectrics to normal ferroelectrics. The frequency and temperature dependence of the dielectric permittivity maximum was also analyzed to discuss the physical meaning of the Debey, Vogel-Fulcher (V-F) and new-glass (N-G) relations. It is shown that the N-G relation is more suitable to characterize the relaxation behavior than the Debey and V-F relations.

  19. Zirconium doped TiO2 thin films: A promising dielectric layer

    Science.gov (United States)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2016-05-01

    In the present work, we have fabricated the zirconium doped TiO2 thin (ZTO) films from a facile spin - coating method. The addition of Zirconium in TiO2 offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO2 thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ˜10-8 A/cm2. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compact and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.

  20. Sol–gel deposited ceria thin films as gate dielectric for CMOS technology

    Indian Academy of Sciences (India)

    Anil G Khairnar; Ashok M Mahajan

    2013-04-01

    In this work, cerium oxide thin films were prepared using cerium chloride heptahydrate, ethanol and citric acid as an additive by sol–gel spin-coating technique and further characterized to study the various properties. Chemical composition of deposited films has been analysed by FTIR which shows existence of CeO2. The samples have been optically characterized using ellipsometry to find refractive index of 2.18 and physical thickness which is measured to be 5.56 nm. MOS capacitors were fabricated by depositing aluminum (Al) metal using the thermal evaporation technique on the top of CeO2 thin films. Capacitance–voltage measurement was carried out to calculate the dielectric constant, flat-band voltage shift of 18.92, 0.3–0.5V, respectively and conductance–voltage study was carried out to determine the Dit of 1.40 × 1013 eV-1 cm-2 at 1MHz.

  1. Structural characterization and dielectric properties of BaTiO3 thin films obtained by spin coating

    Directory of Open Access Journals (Sweden)

    Branimir Bajac

    2014-12-01

    Full Text Available Barium titanate thin films were prepared by spin coating deposition technique of an acetic precursor sol and sintered at 750, 900 and 1050 °C. Phase composition of the obtained thin films was characterized by X-ray diffraction and Raman spectroscopy. Their morphology was analysed by scanning electron microscopy and atomic force microscopy. Dielectric properties of thin films sintered at 750 and 900 °C were characterized by LCD device, where the influence of sintering temperature on dielectric permittivity and loss tangent was inspected. It was concluded that higher sintering temperature increases grain size and amount of tetragonal phase, hence higher relative permittivity was recorded. The almost constant relative permittivity in the measured frequency (800 Hz–0.5 MHz and temperature (25–200 °C ranges as well as low dielectric loss are very important for the application of BaTiO3 films in microelectronic devices.

  2. Organic Thin Film Field Effect Transistors with PMMA-GMA Gate Dielectric

    Institute of Scientific and Technical Information of China (English)

    JIANG Wen-Hai; DU Guo-Tong; YU Shu-Kun; WANG Wei; CHANG Yu-Chun; WANG Xu

    2006-01-01

    @@ We fabricate organic thin films using the copolymer of methyl methacrylate and glycidyl methacrylate (PMMA-GMA) as a gate dielectric with a simple top-contact structure. Copper phthalocyanine (CuPc) TFTs are fabricated and the influences of annealing on the performance are studied. The mobilities increase from 2.5 ×103 cm2/Vs to 4.2 × 103 cm2/Vs and threshold voltages decrease from -18 V to -10 V after annealing. The good performances of the devices approach those obtained with inorganic gate dielectric materials such as silicon dioxide under the same technical conditions. It is fully proven that PMMA-GMA is a competitive candidate as an excellent gate insulation layer.

  3. A non-resonant dielectric metamaterial for enhancement of thin-film solar cells

    CERN Document Server

    Omelyanovich, Mikhail; Simovski, Constantin

    2014-01-01

    Recently, we have suggested dielectric metamaterial composed as an array of submicron dielectric spheres located on top of an amorphous thin-film solar cell. We have theoretically shown that this metamaterial can decrease the reflection and simultaneously can suppress the transmission through the photovoltaic layer because it transforms the incident plane wave into a set of focused light beams. This theoretical concept has been strongly developed and experimentally confirmed in the present paper. Here we consider the metamaterial for oblique angle illumination, redesign the solar cell and present a detailed experimental study of the whole structure. In contrast to our precedent theoretical study we show that our omnidirectional light-trapping structure may operate better than the optimized flat coating obtained by plasma-enhanced chemical vapor deposition.

  4. Low temperature dielectric relaxation and charged defects in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    A. Artemenko

    2013-04-01

    Full Text Available We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

  5. Low temperature dielectric relaxation and charged defects in ferroelectric thin films

    Science.gov (United States)

    Artemenko, A.; Payan, S.; Rousseau, A.; Levasseur, D.; Arveux, E.; Guegan, G.; Maglione, M.

    2013-04-01

    We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K) for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR) investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O) charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

  6. Low temperature dielectric relaxation and charged defects in ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Artemenko, A.; Payan, S.; Rousseau, A.; Arveux, E.; Maglione, M. [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); Levasseur, D. [CNRS, ICMCB, UPR 9048, F-33600 Pessac (France); STMicroelectronics, 16 Rue Pierre et Marie Curie 37071 Tours France (France); Guegan, G. [STMicroelectronics, 16 Rue Pierre et Marie Curie 37071 Tours France (France)

    2013-04-15

    We report a dielectric relaxation in BaTiO{sub 3}-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K) for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR) investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti{sup 3+}-V(O) charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

  7. Flash sintering of dielectric nanoparticles as a percolation phenomenon through a softened film

    Science.gov (United States)

    Chaim, Rachman; Chevallier, Geoffroy; Weibel, Alicia; Estournès, Claude

    2017-04-01

    Recent work [Biesuz et al., J. Appl. Phys. 120, 145107 (2016)] showed analogies between the flash sintering and dielectric breakdown in α-aluminas pre-sintered to different densities. Here, we show that flash sintering of dielectric nanoparticles can be described as a universal behavior by the percolation model. The electrical system is composed of particles and their contact point resistances, the latter softened first due to preferred local Joule heating and thermal runaway during the flash. Local softening has a hierarchical and invasive nature and propagates between the electrodes. The flash event signals the percolation threshold by invasive nature of the softened layer at the particle surfaces. Rapid densification is associated with local particle rearrangements due to attractive capillary forces induced by the softened film at the particle contacts. Flash sintering is a critical phenomenon with a self-organizing character. The experimental electric conductivity results from flash sintering are in full agreement with those calculated from the percolation model.

  8. Modeling of stresses in cylindrically wound capacitors: Characterization and the influence of stress on dielectric breakdown of polymeric film

    Science.gov (United States)

    Tandon, Shalabh

    This dissertation investigates the elastic constants of the polypropylene (PP) film, the radial and circumferential stress states of the layers in the wound roll and the influence of compressive stress on the dielectric breakdown of the metalized polypropylene film. The metalized polypropylene film was mechanically and thermally characterized to determine 7 of its 9 elastic constants and 3 linear coefficients of thermal expansion. The results show that the in-plane tensile moduli (Esb{11} = 2.7 GPa, Esb{22} = 5.7 GPa) of the film are quite different and smaller than the out-of-plane modulus (Esb{33} = 13.0 GPa) of the film. Similarly, the out-of-plane thermal expansion coefficient (CTE) of the film is much larger than the in-plane CTE (alphasb3 ≈ 10 alphasb2). This large anisotropy in the moduli and the expansion coefficients will influence the winding and thermal stresses generated in the wound rolls. The radial and circumferential stresses in the layers of the wound roll were evaluated using the elastic constants of the film obtained in chapter 2. Expressions were derived to determine the influence of elastic constants of the film and the core on the radial and circumferential stresses in the roll. Stresses generated due to the thermal expansion of the assembly during operating temperature changes were also evaluated. The analysis showed that because of the applied winding stress, the layers near the core have compressive radial stresses. The circumferential stresses in the layers also decrease, becoming compressive in some cases for the layers near the core. The influence of the interfacial pressure (compressive stress) on the dielectric behavior of the film was the subject of chapter 4. Applying interfacial pressure, parallel to the electric field, changes the apparent dielectric breakdown strength of the film. At pressures of 0-4 MPa, the PP film has a catastrophic failure at 40% lower potential than its intrinsic breakdown potential. However, for slightly

  9. Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    GUO Yu; ZHANG Xiwen; HAN Gaorong

    2007-01-01

    Hydrogenated amorphous silicon (a-Si:H) films were deposited on Si (100) and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition (DBD-CVD)in (SiH4+H2) atmosphere at room temperature.Results of the thickness measurement,SEM (scanning electron microscope),Raman,and FTIR (Fourier transform infrared spectroscopy) show that with the increase in the applied peak voltage,the deposition rate and network order of the films increase,and the hydrogen bonding configurations mainly in di-hydrogen (Si-H2) and poly hydrogen (SiH2)n are introduced into the films.The UV-visible transmission spectra show that with the decrease in Sill4/ (SiH4+H2) the thin films'band gap shifts from 1.92 eV to 2.17 eV.These experimental results are in agreement with the theoretic analysis of the DBD discharge.The deposition of a-Si:H films by the DBD-CVD method as reported here for the first time is attractive because it allows fast deposition of a-Si:H films on large-area low-melting-point substrates and requires only a low cost of production without additional heating or pumping equipment.

  10. Improvement of dielectric tunability and loss tangent of (Ba,Sr)TiO3 thin films with K doping

    Institute of Scientific and Technical Information of China (English)

    Zhang Wei-Jie; Dai Jian-Ming; Zhu Xue-Bin; Chang Qing; Liu Qiang-Chun; Sun Yu-Ping

    2012-01-01

    Ba0.6Sr0.4TiO3 thin films doped with K were deposited on Pt/Ti/SiO2/Si substrates by the chemical solution deposition method.The structure,surface morphology and the dielectric and tunable properties of Ba0.6Sr0.4TiO3 thin films have been studied in detail. The K content in Ba0.6Sr0.4TiO3 thin films has a strong influence on the material's properties including surface morphology and the dielectric and tunable properties.It was found that the Curie temperature of K-doped Ba0.6Sr0.4TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films,which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4TiO3 films at room temperature.At the optimized content of 0.02 mol,the dielectric loss tangent is reduced significantly from 0.057 to 0.020.Meanwhile,the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8.This suggests that such films have potential applications for tunable devices.

  11. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  12. Terahertz dielectric response of ferroelectric Ba(x)Sr(1-x)TiO3 thin films.

    Science.gov (United States)

    Kang, Seung Beom; Kwak, Min Hwan; Choi, Muhan; Kim, Sungil; Kim, Taeyong; Cha, Eun Jong; Kang, Kwang Yong

    2011-11-01

    Terahertz time-domain spectroscopy has been used to investigate the dielectric and optical properties of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films for nominal x-values of 0.4, 0.6, and 0.8 in the frequency range of 0.3 to 2.5 THz. The ferroelectric thin films were deposited at approximately 700 nm thickness on [001] MgO substrate by pulsed laser deposition. The measured complex dielectric and optical constants were compared with the Cole-Cole relaxation model. The results show that the Cole-Cole relaxation model fits well with the data throughout the frequency range and the dielectric relaxation behavior of ferroelectric Ba(x)Sr(1-x)TiO(3) thin films varies with the films compositions. Among the compositions of Ba(x)Sr(1-x)TiO(3) films with different Ba/Sr ratios, Ba(0.6)Sr(0.4)TiO(3) has the highest dielectric constants and the shortest dielectric relaxation time.

  13. Effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates

    Institute of Scientific and Technical Information of China (English)

    L(U) Ye-gang; DENG Shui-feng; GONG Lun-jun; YANG Jian-tao

    2006-01-01

    A Landau-Ginsburg-Devonshire(LD)-type thermodynamic theory was used to describe the effect of external stress on phase diagrams and dielectric properties of epitaxial ferroelectric thin films grown on orthorhombic substrates which induce nonequally biaxial misfit strains in the films plane. The "misfit strain-external stress" and "external stress-temperature" phase diagrams were constructed for single-domain BaTiO3(BT) and PbTiO3(PT) thin films. It is shown that the external stress may lead to the rotation of the spontaneous polarization and a gradual change of its magnitude, which may result in phase transition. Nonequally biaxial misfit strains dependence of the stability of polarization states may be governed by external stress. At room temperature,stress-induced ferroelectric/paraelectric phase transition which occurs in film on cubic substrate does not take place in the ferroelectric thin film grown on orthorhombic substrate. It is also shown that the nonequally misfit strains in the film plane may lead to the appearance of new phases which do not form in films grown on cubic substrates under external stress. The dependence of the dielectric response on the external stress is also studied. It is shown that the dielectric constants of single-domain PT and BT films are very sensitive to the external stress under the given anisotropic misfit strains-temperature conditions. It presents theoretical evidence that the external stress and anisotropic misfit strains can be employed for improving the thin films physical properties.

  14. Hafnium germanosilicate thin films for gate and capacitor dielectric applications: thermal stability studies

    Science.gov (United States)

    Addepalli, Swarna; Sivasubramani, Prasanna; El-Bouanani, Mohamed; Kim, Moon; Gnade, Bruce; Wallace, Robert

    2003-03-01

    The use of SiO_2-GeO2 mixtures in gate and capacitor dielectric applications is hampered by the inherent thermodynamic instability of germanium oxide. Studies to date have confirmed that germanium oxide is readily converted to elemental germanium [1,2]. In sharp contrast, germanium oxide is known to form stable compounds with transition metal oxides such as hafnium oxide (hafnium germanate, HfGeO_4) [3]. Thus, the incorporation of hafnium in SiO_2-GeO2 may be expected to enhance the thermal stability of germanium oxide via Hf-O-Ge bond formation. In addition, the introduction of a transition metal would simultaneously enhance the capacitance of the dielectric thereby permitting a thicker dielectric which reduces leakage current [4]. In this study, the thermal stability of PVD-grown hafnium germanosilicate (HfGeSiO) films was investigated. XPS, HR-TEM, C-V and I-V results of films after deposition and subsequent annealing treatments will be presented. The results indicate that the presence or formation of elemental germanium drastically affects the stability of the HfGeSiO films. This work is supported by DARPA through SPAWAR Grant No. N66001-00-1-8928, and the Texas Advanced Technology Program. References: [1] W. S. Liu, J .S. Chen, M.-A. Nicolet, V. Arbet-Engels, K. L. Wang, Journal of Applied Physics, 72, 4444 (1992), and, Applied Physics Letters, 62, 3321 (1993) [2] W. S. Liu, M. -A. Nicolet, H. -H. Park, B. -H. Koak, J. -W. Lee, Journal of Applied Physics, 78, 2631 (1995) [3] P. M. Lambert, Inorganic Chemistry, 37, 1352 (1998) [4] G. D. Wilk, R. M. Wallace and J. M. Anthony, Journal of Applied Physics, 89, 5243 (2001)

  15. Characterization of ultraviolet light cured polydimethylsiloxane films for low-voltage, dielectric elastomer actuators

    Science.gov (United States)

    Töpper, Tino; Wohlfender, Fabian; Weiss, Florian; Osmani, Bekim; Müller, Bert

    2016-04-01

    The reduction the operation voltage has been the key challenge to realize of dielectric elastomer actuators (DEA) for many years - especially for the application fields of robotics, lens systems, haptics and future medical implants. Contrary to the approach of manipulating the dielectric properties of the electrically activated polymer (EAP), we intend to realize low-voltage operation by reducing the polymer thickness to the range of a few hundred nanometers. A study recently published presents molecular beam deposition to reliably grow nanometer-thick polydimethylsiloxane (PDMS) films. The curing of PDMS is realized using ultraviolet (UV) radiation with wavelengths from 180 to 400 nm radicalizing the functional side and end groups. The understanding of the mechanical properties of sub-micrometer-thin PDMS films is crucial to optimize DEAs actuation efficiency. The elastic modulus of UV-cured spin-coated films is measured by nano-indentation using an atomic force microscope (AFM) according to the Hertzian contact mechanics model. These investigations show a reduced elastic modulus with increased indentation depth. A model with a skin-like SiO2 surface with corresponding elastic modulus of (2.29 +/- 0.31) MPa and a bulk modulus of cross-linked PDMS with corresponding elastic modulus of (87 +/- 7) kPa is proposed. The surface morphology is observed with AFM and 3D laser microscopy. Wrinkled surface microstructures on UV-cured PDMS films occur for film thicknesses above (510 +/- 30) nm with an UV-irradiation density of 7.2 10-4 J cm-2 nm-1 at a wavelength of 190 nm.

  16. Nanocomposites of polyimide and mixed oxide nanoparticles for high performance nanohybrid gate dielectrics in flexible thin film transistors

    Science.gov (United States)

    Kim, Ju Hyun; Hwang, Byeong-Ung; Kim, Do-Il; Kim, Jin Soo; Seol, Young Gug; Kim, Tae Woong; Lee, Nae-Eung

    2017-01-01

    Organic gate dielectrics in thin film transistors (TFTs) for flexible display have advantages of high flexibility yet have the disadvantage of low dielectric constant (low-k). To supplement low-k characteristics of organic gate dielectrics, an organic/inorganic nanocomposite insulator loaded with high-k inorganic oxide nanoparticles (NPs) has been investigated but high loading of high-k NPs in polymer matrix is essential. Herein, compositing of over-coated polyimide (PI) on self-assembled (SA) layer of mixed HfO2 and ZrO2 NPs as inorganic fillers was used to make dielectric constant higher and leakage characteristics lower. A flexible TFT with lower the threshold voltage and high current on/off ratio could be fabricated by using the hybrid gate dielectric structure of the nanocomposite with SA layer of mixed NPs on ultrathin atomic-layer deposited Al2O3.

  17. Organic thin film transistors with polymer brush gate dielectrics synthesized by atom transfer radical polymerization

    DEFF Research Database (Denmark)

    Pinto, J.C.; Whiting, G.L.; Khodabakhsh, S.

    2008-01-01

    , synthesized by atom transfer radical polymerization (ATRP), were used to fabricate low voltage OFETs with both evaporated pentacene and solution deposited poly(3-hexylthiophene). The semiconductor-dielectric interfaces in these systems were studied with a variety of methods including scanning force microscopy......Low operating voltage is an important requirement that must be met for industrial adoption of organic field-effect transistors (OFETs). We report here solution fabricated polymer brush gate insulators with good uniformity, low surface roughness and high capacitance. These ultra thin polymer films...

  18. Optimal structure of light trapping in thin-film solar cells: dielectric nanoparticles or multilayer antireflection coatings?

    Science.gov (United States)

    Zhao, Yongxiang; Chen, Fei; Shen, Qiang; Zhang, Lianmeng

    2014-08-10

    Recent research has found an alternative way to enhance light trapping of thin-film solar cells by using dielectric nanoparticles deposited on the cell surface. To improve the performance of light trapping, a systematic study on the influence of dielectric nanoparticles on enhancement efficiency is performed in this paper. We prove that the optimal dielectric nanoparticles are substantially equivalent to the multilayer antireflection coatings (ARCs) with a "low-high-low" dielectric constant profile. Moreover, it is demonstrated that the use of a simple two-layer SiO2/SiC ARC can reach 34.15% enhancement, which has exceeded the ideal limit of 32% of nanoparticles structure including plasmonic Ag nanoparticles, dielectric SiC, and TiO2 nanoparticles. That means the optimal multilayer ARCs structure is obviously superior to the optimal dielectric nanoparticles structure, and the deposition of a simple two-layer SiO2/SiC structure on top of a thin-film silicon solar cell can significantly enhance photoelectron generation and hence, result in superior performance of thin-film solar cells.

  19. Growth and characterization of MMA/SiO2 hybrid low- thin films for interlayer dielectric applications

    Indian Academy of Sciences (India)

    Bhavana N Joshi; M A More; A M Mahajan

    2010-06-01

    The methylmethacrylate (MMA) incorporated SiO2 thin films having low dielectric constant ( = 2.97) were deposited successfully to realize new interlayer material for the enhancement of electrical performance of on-chip wiring in very large scale integrated (VLSI) circuits. We have successfully incorporated MMA monomer and eliminated the polymerization step to lower the dielectric constant of deposited thin film. The presence of peak of C=C bond in Fourier transform infrared (FTIR) spectra and carbon peak in energy dispersive (EDAX) spectra confirms the incorporation of carbon in the film due to MMA. The concentration of MMA has great impact on the peak area and full width at half maxima (FWHM) of the Si–O–Si bond, which decreases the density by low atomic weight elements and consequently decreases the dielectric constant. The surface morphology analysed by scanning electron microscopic (SEM) image shows excellent uniformity of the film. The refractive index of 1.31 was measured by ellipsometer for 0.5 ml MMA concentration film. These deposited thin films having low refractive index and dielectric constant are widely applicable for the optical interconnects and interlayer applications in integrated optical circuits and VLSI circuits.

  20. Synthesis, characterization and dielectric properties of SnO2 thin films

    Science.gov (United States)

    Yıldırım, M. Ali; Yıldırım, Sümeyra Tuna; Sakar, Emine Fedakar; Ateş, Aytunç

    2014-12-01

    SnO2 thin films have been grown on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The annealing temperature effect on the structural, morphological, optical and electrical properties of SnO2 thin films has been investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies have showed that all the films have exhibited polycrystalline nature with tetragonal structure and have been covered well on glass substrates. The crystalline and surface properties of the films have improved with increasing annealing temperature. The band gap values have been changed from 3.73 to 3.66 eV depending on the annealing temperature. The refractive index (n), optical static and high frequency dielectric constants (εo, ε∞) values have been calculated as a function of the annealing temperature. The resistivity values of the films have changed between 10-1 - 10-3 Ω cm with annealing temperature and light at room temperature.

  1. Spectroscopic Study of Plasma Polymerized a-C:H Films Deposited by a Dielectric Barrier Discharge

    Directory of Open Access Journals (Sweden)

    Thejaswini Halethimmanahally Chandrashekaraiah

    2016-07-01

    Full Text Available Plasma polymerized a-C:H thin films have been deposited on Si (100 and aluminum coated glass substrates by a dielectric barrier discharge (DBD operated at medium pressure using C2Hm/Ar (m = 2, 4, 6 gas mixtures. The deposited films were characterized by Fourier transform infrared reflection absorption spectroscopy (FT-IRRAS, Raman spectroscopy, and ellipsometry. FT-IRRAS revealed the presence of sp3 and sp2 C–H stretching and C–H bending vibrations of bonds in the films. The presence of D and G bands was confirmed by Raman spectroscopy. Thin films obtained from C2H4/Ar and C2H6/Ar gas mixtures have ID/IG ratios of 0.45 and 0.3, respectively. The refractive indices were 2.8 and 3.1 for C2H4/Ar and C2H6/Ar films, respectively, at a photon energy of 2 eV.

  2. Plasma polymers deposited in atmospheric pressure dielectric barrier discharges: Influence of process parameters on film properties

    Energy Technology Data Exchange (ETDEWEB)

    Fricke, Katja, E-mail: k.fricke@inp-greifswald.de [Leibniz Institute for Plasma Science and Technology e.V. (INP Greifswald), Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Girard-Lauriault, Pierre-Luc [Plasma Processing Laboratory, Department of Chemical Engineering, McGill University, 3610 rue University, Montreal, QC H3A 0C5 (Canada); Weltmann, Klaus-Dieter [Leibniz Institute for Plasma Science and Technology e.V. (INP Greifswald), Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Wertheimer, Michael R. [Department of Engineering Physics, École Polytechnique de Montréal, Box 6079, Station Centre-Ville, Montreal, QC H3C 3A7 (Canada)

    2016-03-31

    We present results on the deposition of plasma polymer (PP) films in a dielectric barrier discharge system fed with mixtures of argon or nitrogen carrier gas plus different hydrocarbon precursors, where the latter possess different carbon-to-hydrogen ratios: CH{sub 4} < C{sub 2}H{sub 6} < C{sub 2}H{sub 4} = C{sub 3}H{sub 6} < C{sub 2}H{sub 2}. The influence of precursor gas mixture and flow rate, excitation frequency, and absorbed power on PP film compositions and properties has been investigated. The discharge was characterized by electrical measurements, while the chemical compositions and structures of coatings were analysed by X-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, total combustion, and elastic recoil detection analyses, the latter two for determining carbon-to-hydrogen ratios. Scanning electron microscopy was used to study the coatings' morphology, and profilometry for evaluating deposition rates. - Highlights: • Atmospheric pressure DBD is used to deposit organic hydrocarbon films. • High deposition rates can be achieved by varying the power and/or gas mixture ratio. • Process parameters affect the films' surface chemical composition and morphology. • Deposited films are not soluble in aqueous environment. • No delamination of coatings produced from argon plasma.

  3. Preparation of high dielectric constant thin films of CaCu3Ti4O12 by sol–gel

    Indian Academy of Sciences (India)

    Deepam Maurya; Devendra P Singh; D C Agrawal; Y N Mohapatra

    2008-02-01

    Preparation of sol–gel derived CaCu3Ti4O12 (CCTO) thin films using two different sols and their characterization including their dielectric response are reported. The properties of CCTO films depend heavily on solvents used to prepare the sols. Dielectric constant as high as ∼900 at 100 kHz could be obtained when acetic acid was used to prepare the sol; in contrast, use of hexanoic acid in the sol yielded films with a much lower dielectric constant. The variation in grain and grain boundary conductivities with temperature has been measured. Activation energies of 0.08 eV and 0.68 eV have been found for grain and grain boundary conduction, respectively.

  4. Dielectric properties of BiFeO3-PbTiO3 thin films prepared by PLD

    Institute of Scientific and Technical Information of China (English)

    CHEN Rui; YU Sheng-wen; ZHANG Guan-jun; CHENG Jin-rong; MENG Zhong-yan

    2006-01-01

    BiFeO3-PbTiO3 (BFO-PT) thin films were prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition (PLD) technique under different oxygen pressures. The structures of the films were characterized by means of XRD. The current densities were performed to check the conductivity of the films. The dielectric constant and loss factor (tanδ) of the films were measured. The results show that the BFO-PT layers are mainly perovskite structured:the film deposited under 6.665 Pa exhibits low leakage current,low dielectric loss (0.017-0.041) and saturated hysteresis loop with polarization (Pr) value and coercive field (Ec) of 3 μC/cm2 and 109 kV/cm.

  5. Effect of substitution group on dielectric properties of 4H-pyrano [3, 2-c] quinoline derivatives thin films

    Science.gov (United States)

    H, M. Zeyada; F, M. El-Taweel; M, M. El-Nahass; M, M. El-Shabaan

    2016-07-01

    The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile (Ph-HPQ) and 2-amino-4-(2-chlorophenyl)-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile (Ch-HPQ) thin films were determined in the frequency range of 0.5 kHz-5 MHz and the temperature range of 290-443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping (CBH) mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.

  6. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  7. Dynamics of poly(vinyl methyl ketone) thin films studied by local dielectric spectroscopy

    Science.gov (United States)

    Casalini, R.; Labardi, M.; Roland, C. M.

    2017-05-01

    Local dielectric spectroscopy, which entails measuring the change in resonance frequency of the conducting tip of an atomic force microscope to determine the complex permittivity of a sample with high spatial (lateral) resolution, was employed to characterize the dynamics of thin films of poly(vinyl methyl ketone) (PVMK) having different substrate and top surface layers. A free surface yields the usual speeding up of the segmental dynamics, corresponding to a glass transition suppression of 6.5° for 18 nm film thickness. This result is unaffected by the presence of a glassy, compatible polymer, poly-4-vinyl phenol (PVPh), between the metal substrate and the PVMK. However, covering the top surface with a thin layer of the PVPh suppresses the dynamics. The speeding up of PVMK segmental motions observed for a free surface is absent due to interfacial interactions of the PVMK with the glass layer, an effect not seen when the top layer is an incompatible polymer.

  8. Surface Modification of Polyimide Film by Dielectric Barrier Discharge at Atmospheric Pressure

    Science.gov (United States)

    Peng, Shi; Li, Lingjun; Li, Wei; Wang, Chaoliang; Guo, Ying; Shi, Jianjun; Zhang, Jing

    2016-04-01

    In this paper, polyimide (PI) films are modified using an atmospheric pressure plasma generated by a dielectric barrier discharge (DBD) in argon. Surface performance of PI film and its dependence on exposure time from 0 s to 300 s are investigated by dynamic water contact angle (WCA), field emission scanning electron microscopy (FESEM), and Fourier transform infrared spectroscopy in attenuated total multiple reflection mode (FTIR-ATR). The study demonstrates that dynamic WCA exhibits a minimum with 40 s plasma treatment, and evenly distributed nano-dots and shadow concaves appeared for 40 s and 12 s Ar plasma treatment individually. A short period of plasma modification can contribute to the scission of the imide ring and the introduction of C-O and C=O (-COOH) by detailed analysis of FTIR-ATR.

  9. Dielectric, optical and electric studies on nanocrystalline Ba5Nb4O15 thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Anil Kumar, C.; Pamu, D.

    2015-06-01

    We report the fabrication of nanocrystalline Ag/BNO/Pt/Ti/SiO2/Si thin film capacitors by RF magnetron sputtering with different film thicknesses. The effect of Ba5Nb4O15 (BNO) thickness on structural, microstructural, electrical, optical and dielectric properties is investigated for the first time. BNO sputtering target prepared is by mechanochemical synthesis method to eliminate the subordinate phases. As deposited thin films were X-ray amorphous and crystallinity is induced after annealing at 700 °C. Upon annealing, refractive indices of the films enhanced whereas the bandgap is decreased and are in the range of 1.89-2.16 and 4.07-4.24, respectively. With an increase in thickness, the dielectric properties improved substantially, which is described by the representation of a dead layer connected in series with a bulk region of the BNO film. The extracted values of thickness and dielectric constant for the dead layer found to be 15.21 nm and 37.03, correspondingly. The activation energy of the mobile charge carriers obtained using the Arrhenius relation are found to be 0.254, 0.036 and 0.027 eV, for the films with 150, 250 and 450 nm, respectively. The leakage current density found to decrease with thickness and found to be 2.5 × 10-6 A/cm2 at applied voltage of 50 kV/cm. The J-E characteristics of the BNO films show a combined response of grain, grain boundaries and film-electrode interfaces. It is interesting to note that in the negative electric field region, conduction is ohmic in nature whereas in the positive field region BNO films exhibit both ohmic and the space charge-limited current mechanisms. The achieved dielectric, electrical and optical properties make these films suitable for MIC, CMOS and optoelectronic applications.

  10. Enhancing Performance of Triboelectric Nanogenerator by Filling High Dielectric Nanoparticles into Sponge PDMS Film.

    Science.gov (United States)

    Chen, Jie; Guo, Hengyu; He, Xianming; Liu, Guanlin; Xi, Yi; Shi, Haofei; Hu, Chenguo

    2016-01-13

    Understanding of the triboelectric charge accumulation from the view of materials plays a critical role in enhancing the output performance of triboelectric nanogenerator (TENG). In this paper, we have designed a feasible approach to modify the tribo-material of TENG by filling it with high permittivity nanoparticles and forming pores. The influence of dielectricity and porosity on the output performance is discussed experimentally and theoretically, which indicates that both the surface charge density and the charge transfer quantity have a close relationship with the relative permittivity and porosity of the tribo-material. A high output performance TENG based on a composite sponge PDMS film (CS-TENG) is fabricated by optimizing both the dielectric properties and the porosity of the tribo-material. With the combination of the enhancement of permittivity and production of pores in the PDMS film, the charge density of ∼19 nC cm(-2), open-circuit voltage of 338 V, and power density of 6.47 W m(-2) are obtained at working frequency of 2.5 Hz with the optimized film consisting of 10% SrTiO3 nanoparticles (∼100 nm in size) and 15% pores in volume, which gives over 5-fold power enhancement compared with the nanogenerator based on the pure PDMS film. This work gives a better understanding of the triboelectricity produced by the TENG from the view of materials and provides a new and effective way to enhance the performance of TENG from the material itself, not just its surface modification.

  11. Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist as Gate Dielectrics and Research of Their Degradation

    Institute of Scientific and Technical Information of China (English)

    LIANG Yan; DONG Gui-Fang; HU Yuan-Chuan; HU Yan; WANG Li-Duo; QIU Yong

    2004-01-01

    @@ Pentacene organic thin-film transistors using commercial photoresist as gate dielectrics were fabricated. The photoresist was spin-coated and directly patterned by photolithography. As a result, the fabrication processes were greatly reduced. With the characteristics of the transistors measured, the degradation of the transistors was investigated. In the search for the factors causing degradation, a transistor using poly(methyl methacrylate)as the gate dielectric was also fabricated. It is regarded that the degradation is caused by the changes at the interface between photoresist and pentacene film.

  12. Through nanohole formation in thin metallic film by single nanosecond laser pulses using optical dielectric apertureless probe.

    Science.gov (United States)

    Kulchin, Y N; Vitrik, O B; Kuchmizhak, A A; Nepomnyashchii, A V; Savchuk, A G; Ionin, A A; Kudryashov, S I; Makarov, S V

    2013-05-01

    Separate nanoholes with the minimum size down to 35 nm (~λ/15) and nanohole arrays with the hole size about 100 nm (~λ/5) were fabricated in a 50 nm optically "thick" Au/Pd film, using single 532 nm pump nanosecond laser pulses focused to diffraction-limited spots by a specially designed apertureless dielectric fiber probe. Nanohole fabrication in the metallic film was found to result from lateral heat diffusion and center-symmetrical lateral expulsion of the melt by its vapor recoil pressure. The optimized apertureless dielectric microprobe was demonstrated to enable laser fabrication of deep through nanoholes.

  13. Dielectric response and electric properties of organic semiconducting phthalocyanine thin films

    Institute of Scientific and Technical Information of China (English)

    A.M.Saleh; S.M.Hraibat; R.M-L.Kitaneh; M.M.Abu-Samreh; S.M.Musameh

    2012-01-01

    The dielectric function of some phthalocyanine compounds (ZnPc,H2Pc,CuPc,and FePc) were investigated by analyzing the measured capacitance and loss tangent data.The real part of the dielectric constant,ε1,varies strongly with frequency and temperature.The frequency dependence was expressed as:ε1 =Aωn,where the index,n,assumes negative values (n < 0).In addition,the imaginary part of the dielectric constant,ε2,is also frequency and temperature dependent.Data analysis confirmed that ε2 =Bωm with values of m less than zero.At low frequencies and all temperatures,a strong dependence is observed,while at higher frequencies,a moderate dependence is obvious especially for the Au-electrode sample.Qualitatively,the type of electrode material had little effect on the behavior of the dielectric constant but did affect its value.Analysis of the AC conductivity dependence on frequency at different temperatures indicated that the correlated barrier hopping (CBH) model is the most suitable mechanism for the AC conduction behavior.Maximum barrier height,W,has been estimated for ZnPc with different electrode materials (Au and Al),and had values between 0.10 and 0.9 eV.For both electrode types,the maximum barrier height has strong frequency dependence at high frequency and low temperatures.The relaxation time,τ,for ZnPc and FePc films increases with decreasing frequency.The activation energy was derived from the slopes of τ versus 1/T curves.At low temperatures,an activation energy value of about 0.01 eV and 0.04 eV was estimated for ZnPc and FePc,respectively.The low values of activation energy suggest that the hopping of charge carriers between localized states is the dominant mechanism.

  14. Synthesis, fabrication and characterization of magnetic and dielectric nanoparticles and nanocomposite films

    Science.gov (United States)

    Liu, Xiaohua

    Materials science is an interdisciplinary field investigating the structure-property relationship in solid-state materials scientifically and technologically. Nanoscience is concerned with the distinctive properties that matter exhibits when confined to physical dimensions on the order of 10-9 meters. At these length scales, behaviors of particles or elaborate structures are often governed by the rules of quantum mechanics in addition to the physical properties associated with the bulk material. The work reported here seeks to employ nanocystals, binary nanocomposites and thin films of materials, to build versatile, functional systems and devices. With a focus on dielectric, ferroelectric, and magnetoelectric performance, a series of materials has been synthesized and different types of nanocomposites have been built. Barium strontium titannate particles at various sizes was developed, aiming at high dielectric constant and low loss at high frequency range. Cobalt ferrite-polymer nanocomposite was fabricated with potential magnetoelectric coupling. Along with synthesis, advanced electron microscopies (TEM, SEM, STEM, EELS) at atomic resolution were employed to thoroughly investigate the crystallinity, morphology and composition. By means of spin-coating and printing techniques, single and multiple layered capacitors featuring improved dielectric performance (high k, low loss, high breakdown voltage, etc.) were developed through a) electrode deposition, b) dielectric layer deposition, and c) parylene evaporation. Such capacitors are further incorporated into electric power converters for LED lighting. Hopefully in the future we can make electronic devices more efficient, sustainable, smaller and cheaper. By advancing our knowledge of nanomaterials, especially those with potential of multifunction, energy efficiency and sustainability, we have strived to push the limits of synthesis, characterization, fabrication and property analysis of nanostructures towards new

  15. Supercritical carbon dioxide extraction of porogens for the preparation of ultralow-dielectric-constant films

    Energy Technology Data Exchange (ETDEWEB)

    Toney, Michael F

    2003-06-20

    Supercritical carbon dioxide (SCCO2) extraction of a CO{sub 2}-soluble poly(propylene glycol) (PPG) porogen from poly(methylsilsesquioxane) (PMSSQ) cured to temperatures adequate to initiate matrix condensation, but still below the decomposition temperature of the porogen is demonstrated to produce nanoporous, ultralow dielectric constant thin films. Both closed and open cell porous structures were prepared simply by varying the porogen load in the organic/inorganic hybrid films. The porogen loads investigated in the present work ranged from 25-55 wt.%. Structural characterization of the samples conducted using transmission electron microscope (TEM), small angle X-ray scattering (SAXS) and Fourier transform infrared spectroscopy (FTIR) confirms the successful extraction of the porogen from the PMSSQ matrix at relatively low temperatures ({le} 200 C). The standard thermal decomposition process is performed at much higher temperatures (typically in the range of 400 C-450 C). The values of dielectric constants and refractive indices measured are in good agreement with the structural properties of these samples.

  16. Metallo-organic decomposition derived (Ca, Sr)ZrO{sub 3} dielectric thin films on Pt coated Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen Changhong [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)]. E-mail: ech_chen@yahoo.com.sg; Huang Dexiu [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Zhu Weiguang [Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Yao Xi [Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2006-08-15

    Metallo-organic decomposition derived dielectric thin films of calcium zirconate doped with various concentrations of strontium ((Ca, Sr)ZrO{sub 3}) were prepared on Pt coated silicon substrate. Mainly in this paper, we present the investigations of their structural developments and present their electric and dielectric properties as well. The structural developments show that the CaZrO{sub 3} film has amorphous structure with carbonate existing when annealed at 600 deg. C, while annealed at 650 deg. C and above, the carbonate is decomposed and those films crystallize into perovskite phase without preferred orientation. In addition, the prepared (Ca, Sr)ZrO{sub 3} films with their Zr-O bonds affected by strontium doping are homogenous and stable as solid solutions in any concentration of strontium and all Bragg diffraction characteristics for the films shift downward with the increase in the concentration of strontium. Moreover, the electric properties show that the (Ca, Sr)ZrO{sub 3} films have very low leakage current density and high breakdown strength; typically, the CaZrO{sub 3} film annealed at 650 deg. C has the leakage current density approximately 9.5 x 10{sup -8} A cm{sup -2} in the field strength of 2.6 MV cm{sup -1}. Furthermore, the dielectric properties show that their dielectric constants are higher than 12.8 with very little dispersion in the frequency range from 100 Hz to 1 MHz and are independent of applied dc bias as well. The dielectric properties, in combination with the electric properties, make the materials promising candidates for high-voltage and high-reliability capacitor applications.

  17. Zirconium titanate thin film prepared by surface sol-gel process and effects of thickness on dielectric property

    CERN Document Server

    Kim, C H

    2002-01-01

    Single phase of multicomponent oxide ZrTiO sub 4 film could be prepared through surface sol-gel route simply by coating the mixture of 100mM zirconium butoxide and titanium butoxide on Pt/Ti/SiO sub 2 /Si(100) substrate, following pyrolysis at 450 .deg. C, and annealing it at 770 .deg. C. The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V). The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, t sub i , was dependent on the frequency. It reached a saturated t sub i value, 6.9 A, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO sub 4 pellet-shaped material was 3...

  18. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

    Science.gov (United States)

    Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

    2011-09-01

    Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

  19. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2015-07-13

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  20. Interfacial effects in oxide-polymer laminar composite thin film dielectrics for capacitor applications

    Science.gov (United States)

    Tewari, Pratyush

    Continuous increase in the density of active components on microelectronic chip/circuit board requires development of new capacitors with smaller size, weight and cost. Miniaturization in the size of capacitors demands development of high energy density dielectric materials, which are the core of parallel plate capacitors. Nano composite dielectrics comprising high polarizibility oxide fillers randomly dispersed in high breakdown strength polymer matrix are considered as a potential high energy density materials for capacitor applications. Large interfacial volume, generated due to introduction of nano fillers in polymer matrix, might have significant positive contribution towards energy storage in nano composites. However, percolation issues associated with nano fillers and generation of large interfacial volume in nano composites, where complex electric field distribution overlaps with interfacialy modified polymer lead to unclear understanding of polymer-filler interfacial interactions in nano composites. Hence, in the current work laminar composite double layered dielectric structures, which provide relatively simple local field distribution at the interface and ideal series connectivity between oxide and polymer, are used as a model system to understand polymer-oxide interfacial interactions. Interfacial effects are reported for both low permittivity (SiO2-Parylene C) and medium permittivity (ZrO2-P(VDF-TrFE)) laminar composite dielectrics. Pyrolytic vapor decomposition polymerization process was used to grow Parylene C thin films on gold and thermally grown SiO2 surfaces. Enhancement in crystallite dimension with post deposition annealing treatments of Parylene C thin films was found to reduce dielectric loss tangent and hence enhance its dielectric properties. Electric field and temperature dependant leakage current analysis suggested hopping as dominant conduction mechanism in Parylene C thin films. Parylene C thin films in laminar composites showed

  1. Gate-tunable electron interaction in high-κ dielectric films

    Science.gov (United States)

    Kondovych, Svitlana; Luk’Yanchuk, Igor; Baturina, Tatyana I.; Vinokur, Valerii M.

    2017-02-01

    The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-κ) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. We find that by reducing the distance from the gate to the film, we decrease the spatial range of the 2D long-range logarithmic interaction, changing it to predominantly dipolar or even to exponential one at lateral distances exceeding the dimension of the film-gate separation. Our findings offer a unique laboratory for the in-depth study of topological phase transitions and related phenomena that range from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.

  2. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  3. Electrical properties of nanoscale metallic thin films on dielectric elastomer at various strain rates

    Science.gov (United States)

    Faisal, Md. Shahnewaz Sabit; Ye, Zhihang; Chen, Zheng; Asmatulu, Ramazan

    2015-04-01

    Dielectric elastomers (DEs) have significant applications in artificial muscle and other biomedical equipment and device fabrications. Metallic thin films by thin film transfer and sputter coating techniques can provide conductive surfaces on the DE samples, and can be used as electrodes for the actuators and other biomedical sensing devices. In the present study, 3M VHB 4910 tape was used as a DE for the coating and electrical characterization tests. A 150 nm thickness of gold was coated on the DE surfaces by sputter coating under vacuum with different pre-strains, ranging from 0 to 100%. Some of the thin films were transferred to the surface of the DEs. Sputter coating, and direct transferring gold leaf coating methods were studied and the results were analyzed in detail in terms of the strain rates and electrical resistivity changes. Initial studies indicated that the metallic surfaces remain conductive even though the DE films were considerably elongated. The coated DEs can be used as artificial muscle by applying electrical stimulation through the conductive surfaces. This study may provide great benefits to the readers, researchers, as well as companies involved in manufacturing of artificial muscles and actuators using smart materials.

  4. Sol-Gel Deposited Porogen Based Porous Low-k Thin Films for Interlayer Dielectric Application in ULSI Circuits

    Directory of Open Access Journals (Sweden)

    Yogesh S. Mhaisagar

    2012-10-01

    Full Text Available Porous SiO2 low-k thin films with low dielectric constant were successfully deposited by sol-gel spin-coating technique. The films were deposited by using Tertaethylorthosilicate (TEOS as a precursor solution and HF was used as an acid catalyst solution. The Tween80 with different volumetric concentrations i.e. 0.0 ml, 0.5 ml and 0.7 ml was used as a pore generator to lower the dielectric constant of the films by introducing the porosity in the films matrix. The thickness and refractive index (RI of low-k thin films have been measured by Ellipsometer. The refractive index and thickness of the films observed to be decreasing with increase in Tween80 concentration. The chemical bonding structures of films were analyzed by using Fourier transform infrared spectroscopy (FT-IR spectroscopy and the stretching, bending and rocking peaks appear at 1077 cm – 1, 967  cm – 1, 447  cm – 1 respectively confirm the formation of Si-O-Si network. The RIs of the films deposited at 0 ml, 0.5 ml and at 0.7 ml of Tween80 concentration are found to be 1.34, 1.26, and 1.20 respectively. Based on RI values of the films, the porosity percentage, density and dielectric constant have been calculated by standard formulation method. The increase in porosity percentage of films from 3 % to 55 % with increase in Tween80 concentration reveals that, the most of the hydroxyl group and porogen get evaporated and form more voids in the films. This increase in porosity percentage causes to lower the dielectric constant of films and was found to be 2.26 at the 0.7 ml of Tween80 concentration. Such porogen based low dialectic constant thin films can be suitable for interlayer dielectric (ILD applications in ULSI circuits.

  5. Development of New Electrode System for High Field Dielectric Properties Measurement Using Evaporated Polypropylene Thin Guard Film

    Science.gov (United States)

    Fujii, Masayuki; Tohyama, Kazuyuki; Tokoro, Tetsuro; Mizuno, Yukio; Nagao, Masayuki; Kosaki, Masamitsu

    Non-polar polymers such as polyethylene (PE) and polypropylene (PP) are widely used as very important electrical insulating and dielectric materials. They are used in the increasingly high AC electric field strength region approaching to the limit of electrical breakdown strength of the materials. Therefore the study of high-field dielectric property is very important in terms of understanding the AC breakdown mechanism of materials. A three-terminals electrode system with a guard film (new type electrode system) was developed in our laboratory for the precise measurement of high-field tanδ, where the guard film was used to reduce the disturbance of electric field around the edge of a main electrode. However, minute air sometimes steals between a sample film and the guard film. The air sometimes generates partial discharge in the high electric field region. Therefore, when the sample had minute air, the new type electrode system was limited under 100kVrms/mm application that didn't reach to an intrinsic breakdown strength of the 30μm-thick sample. We tried to improve the new electrode system without minute air between a sample film and the guard film. We also tried to make very thin guard film to reduce the field disturbance at the edge of main electrode. In this paper a PP-guard film on a biaxially oriented polypropylene (BOPP) film was made by evaporation. This improvement of the electrode system using the evaporated PP-guard film was in success so that high-field dielectric properties of BOPP film could be measured up to near the intrinsic breakdown field of the sample.

  6. Experimental determination of thermal conductivities of dielectric thin films; Determination experimentale des conductivites thermiques de couches minces dielectriques

    Energy Technology Data Exchange (ETDEWEB)

    Scudeller, Y.; Hmina, N.; Lahmar, J.; Bardon, J.P. [Nantes Univ., 44 (France)

    1996-12-31

    This paper presents a method of measurement of thermal conductivity of sub-micron dielectric films in a direction perpendicular to the substrate. These films (oxides, nitrides, diamond..) are mainly used for the electrical insulation of semiconductor circuits and in optical treatments of high energy lasers. The principle of the method used and the experimental device are described. The results obtained with silicon oxides are discussed. (J.S.) 13 refs.

  7. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.

    Science.gov (United States)

    Kim, Yong-Hoon; Kim, Kwang-Ho; Park, Sung Kyu

    2013-11-01

    In this paper, the effects of annealing conditions on the dielectric properties of solution-processed aluminum oxide (Al2O3) layers for indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) have been investigated. The dielectric properties of Al2O3 layers such as leakage current density and dielectric strength were largely affected by their annealing conditions. In particular, oxygen partial pressure in rapid thermal annealing, and the temperature profile of hot plate annealing had profound effects on the dielectric properties. From a refractive index analysis, the enhanced dielectric properties of Al2O3 gate dielectrics can be attributed to higher film density depending on the annealing conditions. With the low-temperature-annealed Al2O3 gate dielectric at 350 degrees C, solution-processed IZTO TFTs with a field-effect mobility of approximately 2.2 cm2/Vs were successfully fabricated.

  8. Cross-linking effect on dielectric properties of polypropylene thin films and applications in electric energy storage

    Science.gov (United States)

    Yuan, Xuepei; Chung, T. C. Mike

    2011-02-01

    A family of cross-linked polypropylene (x-PP) thin film dielectrics is systematically studied to understand the cross-linking effect on the dielectric properties. Evidently, the butylstyrene (BSt) cross-linkers increase both the dielectric constant (ɛ) and breakdown strength (E), without increasing energy loss. An x-PP dielectric, with 3.65 mol % BSt cross-linkers, exhibits a ɛ ˜3, which is independent of a wide range of temperatures and frequencies, slim D-E hysteresis loops, high breakdown strength (E=650 MV/m), narrow breakdown distribution, and reliable energy storage capacity >5 J/cm3 (double that of state-of-the-art biaxially oriented polypropylene capacitors), without showing any increase in energy loss.

  9. Dielectric properties of poly(vinylidene fluoride/CaCu3Ti4O12 nanocrystal composite thick films

    Directory of Open Access Journals (Sweden)

    2010-10-01

    Full Text Available The poly(vinylidene fluoride/CaCu3Ti4O12 (CCTO nanocrystal composite films (thickness ≈85 µm with relatively high dielectric permittivity (90 at 100 Hz were prepared by the solution casting followed by spin coating technique. The structural, the microstructural and the dielectric properties of the composites were studied using X-ray diffraction, Scanning Electron Microscope, and Impedance analyzer respectively. The effective dielectric permittivity (εeff of the composite increased with increase in the volume fraction of CCTO at all the frequencies (100 Hz to 1 MHz under investigation. The room temperature dielectric permittivity which is around 90 at 100 Hz, has increased to about 290 at 125°C (100 Hz. These results may be exploited in the development of high energy density capacitors.

  10. Probing Cu Diffusion Barrier Layers on Porous Low-Dielectric-Constant Films by Posireonium Annihilation Lifetime Spectroscopy

    Institute of Scientific and Technical Information of China (English)

    HU Yi-Fan; SUN Jia-Ning; Gidley D.W.

    2005-01-01

    @@ Two kinds of Cu diffusion barrier layers, sealedfilms and capped fi1ms, on nanoporous low-dielectric-constant filmsare investigated by positronium annihilation lifetime spectroscopy (PALS). We have found that the minimumthickness of Ta to form an effective diffusion barrier is affected by the pore size. The films with large poresrequire thick barrier layers to form effective diffusion barriers. In addition, a possible ultra-thin diffusion barrier,i.e. a plasma-induced densification layer, has also been investigated. The PALS data confirm that a porouslow-dielectric-constant thin film can be shrunk by exposure to plasma. This shrinkage is confined to a surfacelayer of collapsed pores and forms a dense layer. The dense layer tends to behave as Ps (positronium) diffusionbarriers. Indeed, the controlled thin "skin" layer could prevent Cu diffusion into the underlying dielectrics.

  11. Preparation of polyimide/Al{sub 2}O{sub 3} composite films as improved solid dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Alias, Asliza; Ahmad, Z. [School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang (Malaysia); Ismail, A.B., E-mail: badri@eng.usm.my [School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang (Malaysia)

    2011-06-15

    Highlights: > We prepare and characterize polyimide-alumina composite as solid dielectric. > Prolong the curing time at low temperature reduces the composite s shrinkage problem. > Dielectric constant increases with the increase of alumina content. > Thermal properties is improved with the addition of alumina. - Abstract: Considerable demand for solid thin-film dielectrics with high dielectric constants for use in the fabrication of capacitors has been observed. In this study, polyimide (PI)/Al{sub 2}O{sub 3} composite films were prepared by incorporating different micron-sized {alpha}-Al{sub 2}O{sub 3} contents into PI derived from pyromellitic dianyhydride and 4,4'-oxydianiline via ultrasonication. Chemical structure, morphology, dielectric and thermal properties were investigated by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), LCR meter and Perkin Elmer Pyris 6. FTIR spectra showed complete imidization, and all characteristic peaks of the imide groups are observed in PI and PI/Al{sub 2}O{sub 3} composite films. XRD patterns revealed that the PI/Al{sub 2}O{sub 3} composite exhibits peaks similar to those of {alpha}-Al{sub 2}O{sub 3}, indicating that the crystal structure of {alpha}-Al{sub 2}O{sub 3} remains unchanged and stable after being doped into the PI matrix. SEM micrographs showed uniform distribution of {alpha}-Al{sub 2}O{sub 3} particles in the PI matrix. Meanwhile, the dielectric constant, dielectric loss and thermal stability of PI/Al{sub 2}O{sub 3} increases with the addition of {alpha}-Al{sub 2}O{sub 3} content.

  12. Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

    Science.gov (United States)

    Kurniawan, Robi; Sutjahja, Inge M.; Winata, Toto; Rusydi, Andrivo; Darma, Yudi

    2015-09-01

    A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (ɛ2) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states could not be observed clearly in this stage. The evolution of extracted dielectric function is observable by introducing 8% Cu as indicated by decreasing of excitonic intensity. This result indicates the screening of excitonic state. This study will bring us to have a good undestanding for the role of Cu impurities for ZnO thin films.

  13. Optical, Dielectric Characterization and Impedance Spectroscopy of Ni-Substituted MgTiO3 Thin Films

    Science.gov (United States)

    Gogoi, Pallabi; Srinivas, P.; Sharma, Pramod; Pamu, D.

    2016-02-01

    We report the effects of oxygen mixing percentage (OMP) and annealing temperature on surface morphology, optical, dielectric and electrical properties of (Mg0.95Ni0.05)TiO3 (MNT) thin films deposited onto amorphous SiO2 and platinized silicon (Pt/TiO2/SiO2/Si) substrates by radio frequency (RF) magnetron sputtering. The annealed films exhibited the highest refractive index, 2.05, at 600 nm with an optical bandgap value of 4.33 eV. The metal-insulator-metal (MIM) capacitors of the MNT thin films were fabricated under different OMPs and the dielectric properties were analyzed by using Maxwell-Wagner two-layer theory and Koop's phenomenological theory. MNT films prepared under 50% OMP displayed the highest dielectric constant (11.21) and minimum loss tangent (0.0114) at 1 MHz. The impedance spectroscopy of the films deposited under 50% OMP has been studied. The Nyquist plots of MNT films revealed two semi-circular arcs and is explained on the basis of an equivalent circuit model. The frequency-dependent alternative current (AC) conductivity followed the Jonscher's power law. The activation energies are calculated using the Arrhenius relationship. The hopping frequency of the charged species was calculated, and the correlation between AC and direct current (DC) conduction mechanisms established in accordance with the Barton-Nakajima-Namikawa (BNN) relationship.

  14. Contributions to the dielectric losses of textured SrTiO3 thin films with Pt electrodes

    Science.gov (United States)

    Lu, Jiwei; Schmidt, Steffen; Ok, Young-Woo; Keane, Sean P.; Stemmer, Susanne

    2005-09-01

    The factors controlling low-frequency (1 MHz) dielectric losses of textured SrTiO3 thin films deposited by radio-frequency magnetron sputtering on platinized sapphire substrates were investigated. In particular, the influence of film texture, phase transformations, applied bias field, temperature, and annealing atmospheres was studied. Films that were (111) textured showed a phase transformation at ~150 K, whereas films that were predominantly (110) oriented did not exhibit a phase transformation in the measured temperature range (100-300 K). Two major contributions to the dielectric losses were identified: a low-temperature loss increase for the (111) oriented film, which could be suppressed by an applied bias field, and a loss peak at ~250 K (at 1 MHz), which was strongly frequency-dependent and likely associated with a relaxing defect. The low-temperature loss mode was related to the appearance of a phase transformation and contributed to the dielectric losses even at temperatures that were more than 100 K above the phase transformation. In contrast to the leakage properties of the films, which were strongly dependent on annealing atmospheres, annealing under reducing conditions had no significant influence on any of the observed loss modes. Possible origins of the different loss contributions were discussed.

  15. Temperature dependent dielectric and ferroelectric studies of BiFeO3 thin film

    Science.gov (United States)

    Gaur, Anand P. S.; Barik, Sujit K.; Katiyar, Ram S.

    2013-03-01

    Although BiFeO3 (BFO) has received a lot of interest due to its good multiferroic properties at room temperature, high leakage current limit its usage for practical applications. Recently, it is found that these properties in thin films can be different due to strain effect induced by substrate, preparation conditions and electrode effects, etc. In this context, we have studied the temperature dependence of polarization and dielectric properties of BFO thin film by varying the bottom electrode thickness and using different electrodes. The strain dependent ferroelectric switching behaviors have also been investigated with a traditional ferroelectric tester and switching spectroscopy piezoresponse force microscopy (SS-PFM), respectively. We used pulsed laser deposition to fabricate thin films of BFO using Si (100) substrate and SrTiO3(STO) as buffer layer with different bottom electrodes such as SrRuO3(SRO), LaNiO3(LNO) and Pt/Si. The thickness of STO layer is kept fixed around 70 nm and the thicknesses of BFO and electrode layer were varied from 70 nm to 200nm. The layers were grown under optimized conditions and polycrystalline nature is found from room temperature XRD. A large enhancement of polarization is found while using LNO electrode and also with reducing the thickness of BFO layer. The remnant polarization and cohesivity also shows large increase with increaisng temperature, although leakage current increases significantly. NSF

  16. Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor

    Directory of Open Access Journals (Sweden)

    Anil G. Khairnar

    2013-07-01

    Full Text Available In the present study, the Al/CeO2 / p-Si MOS capacitor was fabricated by depositing the Aluminium (Al metal layer by thermal evaporation technique on sol-gel derived CeO2 high-k thin films on p-Si substrate. The deposited CeO2 films were characterized by Ellipsometer to study the refractive index that is determined to be 3.62. The FTIR analysis was carried out to obtain chemical bonding characteristics. Capacitance-voltage measurements of Al/CeO2 /p-Si MOS capacitor were carried out to determine the dielectric constant, equivalent oxide thickness (EOT and flat band shift (VFB for the deposited CeO2 film of 16.22, 1.62 nm and 0.7 V respectively. The conductance voltage curve was used to determine the interface trap density (Dit at the CeO2 / p-Si interface that is calculated to be 1.29 × 1013 cm – 2 eV – 1 for measurement frequency of 500 kHz.

  17. Etching of organosilicate glass low-k dielectric films in halogen plasmas

    CERN Document Server

    Vitale, S A

    2002-01-01

    The chemistry and kinetics of alternative etching chemistries for low-k dielectric materials are explored to improve the anisotropy of the etching process and to reduce the problems associated with postetch clean-up. Etching rates, selectivities, and etching yields of Black Diamond and Coral organosilicate glasses (OSGs) have been measured. Black Diamond and Coral are etched rapidly in F sub 2 , Cl sub 2 , and HBr high density plasmas, and Cl sub 2 +HBr plasmas have been identified as a viable process chemistry with several advantages over traditional fluorocarbon plasmas. The OSG films are not spontaneously etched by F sub 2 , Cl sub 2 , HBr molecules, Cl, or Br atoms, however, F atoms etch the OSGs spontaneously. F, Cl, and H atoms extract a substantial amount of carbon from the films, but Cl and H do not attack the OSG oxide matrix. The Coral films are more strongly depleted of carbon after halogen plasma etching than the Black Diamond. In addition, oxygen atoms extract nearly all of the carbon and nitroge...

  18. Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2

    OpenAIRE

    Choi, HW; Lai, PT; Xu, JP; Deng, LF; Liu, YR

    2009-01-01

    OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by...

  19. Study of Fluorine Addition Influence in the Dielectric Constant of Diamond-Like Carbon Thin Film Deposited by Reactive Sputtering

    Science.gov (United States)

    Trippe, S. C.; Mansano, R. D.

    The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic curves of capacitance as a function of applied tension (C-V) and current as a function of the applied tension (I-V). We showed the dielectric constant (k) and the resistivity (ρ) as functions of the CF4 concentration. On films with 65% CF4, we found that k = 2.7, and on films with 70% CF4, ρ = 12.3 × 1011 Ω cm. The value of the electrical breakdown field to films with 70% CF4 is 5.3 × 106 V/cm.

  20. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  1. Measurement and modeling of dielectric properties of Pb(Zr,Ti)O3 ferroelectric thin films.

    Science.gov (United States)

    Renoud, Raphaël; Borderon, Caroline; Gundel, Hartmut W

    2011-09-01

    In this study, the real and imaginary parts of the complex permittivity of lead zirconate titanate ferroelectric thin films are studied in the frequency range of 100 Hz to 100 MHz. The permittivity is well fitted by the Cole-Cole model. The variation of the relaxation time with the temperature is described by the Arrhenius law and an activation energy of 0.38 eV is found. Because of its nonlinear character, the dielectric response of the ferroelectric sample depends on the amplitude of the applied ac electric field. The permittivity is composed of three different contributions: the first is due to intrinsic lattice, the second is due to domain wall vibrations, and the third is due to domain wall jumps between pinning centers. This last contribution depends on the electric field, so it is important to control the field amplitude to obtain the desired values of permittivity and tunability.

  2. Surface Modification of Polyethylene (PE) Films Using Dielectric Barrier Discharge Plasma at Atmospheric Pressure

    Institute of Scientific and Technical Information of China (English)

    WANG Kun; LI Jian; REN Chunsheng; WANG Dezhen; WANG Younian

    2008-01-01

    Modification of the surface properties of polyethylene (PE) films is studied using air dielectric barrier discharge at atmospheric pressure. The treated samples are examined by water contact angle measurements, Fourier transform infrared attenuated total reflection spectroscopy (FTIR-ATR), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). With the increase in treating time, the water contact angle changes from 93.2° before treatment to a minimum of 53.3° after a treatment for 50 s. Both ATR and XPS results show some oxidized" species are introduced into the sample surface by the plasma treatment and the tendency of the water contact angle with the treating time is the same as that of oxygen concentration on the treated sample surface. SEM result shows the surface roughness of PE samples increases with the treatment time increasing.

  3. Preparation and dielectric properties of compositionally graded (Ba,Sr)TiO3 thin film by sol-gel technique

    Institute of Scientific and Technical Information of China (English)

    ZHANG Tian-jin; WANG Jun; ZHANG Bai-shun; WANG Jin-zhao; WAN Neng; HU Lan

    2006-01-01

    Compositional graded BaxSr1-xTiO3 (x=0.6,0.7,0.8,0.9,1.0) (BST) thin films (less than 400 nm) were fabricated on Si and Pt/Ti/SiO2/Si substrates by sol-gel technique. A special heating treatment was employed to form the uniform composition gradients at 700 ℃. The microstructures of the films were studied by means of X-ray diffraction,atomic force microscope and field emission scanning electron microscopy. The results show that the films have uniform and crack-free surface morphology with perovskite structure phase. The small signal dielectric constant (εr) and dielectric loss (tanδ) are found to be 335 and 0.045 at room temperature and 200 kHz. The dielectric properties change significantly with applied dc bias,and the graded thin film show high tunability of 42.3% at an applied field of 250 kV/cm. All the results indicate that the graded BST thin films prepared by sol-gel technique have a promising candidate for microelectronic device.

  4. Structural and Dielectric Properties of Dy-doped( Ba, Sr, Ca) TiO3 Thick Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Preparation and electrocatalytic activities of Pt-TiO2 nanotubes (Ba0.57Sr0.33Ca0.10)TiO3 powders, prepared by the sol-gel method, were doped MnCO3 as acceptor and Dy2O3 as donor. This powder was mixed with an organic vehicle and BSCT thick films were fabricated by the screen-printing techniques on alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of Dy2O3 amount. As a result of the differential thermal analysis (DTA), exothermic peak was observed at around 670℃ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with increasing amount of Dy2O3. The relative dielectric constant and dielectric loss of the BSCT thick film doped Dy2O3 0. 1mol% were 4637.4 and 1.6% at 1kHz, respectively.

  5. Ordered growth of topological insulator Bi2Se3 thin films on dielectric amorphous SiO2 by MBE.

    Science.gov (United States)

    Jerng, Sahng-Kyoon; Joo, Kisu; Kim, Youngwook; Yoon, Sang-Moon; Lee, Jae Hong; Kim, Miyoung; Kim, Jun Sung; Yoon, Euijoon; Chun, Seung-Hyun; Kim, Yong Seung

    2013-11-07

    Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on an amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by the van der Waals epitaxy mechanism. A weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows a modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on an amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films.

  6. Dielectric, impedance and ferroelectric characteristics of c-oriented bismuth vanadate films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumari, Neelam [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Krupanidhi, S.B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Varma, K.B.R. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)]. E-mail: kbrvarma@mrc.iisc.ernet.in

    2007-03-15

    Ferroelectric bismuth vandante, Bi{sub 2}VO{sub 5.5} (BVO) thin films with layered perovskite structure were deposited by pulsed excimer laser ablation technique on (1 1 1) Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. The polarization hysteresis (P versus E) studies on the BVO thin films at 300 K confirmed the remnant polarization (P {sub r}) and coercive field (E {sub c}) to be 5.6 {mu}C/cm{sup 2} and 113 kV/cm, respectively. The same was corroborated via the capacitance-voltage measurements. The dielectric response and conduction mechanism of BVO thin films under small ac fields were analyzed using impendence spectroscopy. A strong low frequency dielectric dispersion (LFDD) was found to exist in these films, which was ascribed to the presence of the ionized space charge carriers such as oxygen ion vacancies and interfacial polarization. The room temperature dielectric constant and the loss (D) at 100 kHz were 233 and 0.07, respectively. The thermal activation energy for the relaxation process of the ionized space charge carriers was 0.85 eV. The frequency characteristics of BVO thin films under study showed universal dynamic response that was proposed by Jonscher for the systems associated with quasi-free charges.

  7. Theory and practical considerations of multilayer dielectric thin-film stacks in Ag-coated hollow waveguides.

    Science.gov (United States)

    Bledt, Carlos M; Melzer, Jeffrey E; Harrington, James A

    2014-02-01

    This analysis explores the theory and design of dielectric multilayer reflection-enhancing thin film stacks based on high and low refractive index alternating layers of cadmium sulfide (CdS) and lead sulfide (PbS) on silver (Ag)-coated hollow glass waveguides (HGWs) for low loss transmission at midinfrared wavelengths. The fundamentals for determining propagation losses in such multilayer thin-film-coated Ag hollow waveguides is thoroughly discussed, and forms the basis for further theoretical analysis presented in this study. The effects on propagation loss resulting from several key parameters of these multilayer thin film stacks is further explored in order to bridge the gap between results predicted through calculation under ideal conditions and deviations from such ideal models that often arise in practice. In particular, the effects on loss due to the number of dielectric thin film layers deposited, deviation from ideal individual layer thicknesses, and surface roughness related scattering losses are presented and thoroughly investigated. Through such extensive theoretical analysis the level of understanding of the underlying loss mechanisms of multilayer thin-film Ag-coated HGWs is greatly advanced, considerably increasing the potential practical development of next-generation ultralow-loss mid-IR Ag/multilayer dielectric-coated HGWs.

  8. Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

    CERN Document Server

    Tsuchiya, Y; Tung, R T; Oda, S; Kurosawa, M; Hattori, T

    2003-01-01

    The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness approx 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models. (author)

  9. Comparison of neat and photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene thin film dielectrics formed by spin-coating

    Energy Technology Data Exchange (ETDEWEB)

    Iyore, O.D.; Roodenko, K.; Winkler, P.S. [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States); Noriega, J.R.; Vasselli, J.J. [Electrical Engineering Department, The University of Texas at Tyler, Tyler, TX 75799 (United States); Chabal, Y.J. [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States); Gnade, B.E., E-mail: gnade@utdallas.edu [Materials Science and Engineering Department, The University of Texas at Dallas, Richardson, TX 75080 (United States)

    2013-12-02

    We report the characterization of photo-crosslinked polyvinylidene fluoride-co-hexafluoropropylene (PVDF-HFP) thin film, metal–insulator–metal capacitors fabricated using standard semiconductor processing techniques. We characterize the capacitors using in-situ vibrational spectroscopy during thermally-assisted poling and correlate the Fourier transform infrared spectroscopy (FTIR) results with X-ray diffraction (XRD) results. FTIR analysis of the neat PVDF-HFP showed α → β transformations during poling at room temperature and at 55 °C. α → β transformations were observed for the crosslinked polymer only during poling at 55 °C. XRD data revealed that photo-crosslinking caused the polymer to partially crystallize into the β-phase. The similar behavior of the neat and crosslinked samples at 55 °C suggests that a higher activation energy was needed for α → β transformations in crosslinked PVDF-HFP during poling. Electrical measurements showed that photo-crosslinking had no significant effect on the dielectric constant and dielectric loss of PVDF-HFP. However, the dielectric strength and maximum energy density of the crosslinked polymer were severely reduced. - Highlights: • Polyvinylidene fluoride-hexafluoropropylene (PVDF-HFP) dielectrics were studied. • Phase transformations were observed only at 55 °C for the crosslinked PVDF-HFP. • Crosslinking had no strong effect on the dielectric constant of PVDF-HFP. • Breakdown strengths were 620 MVm{sup −1} and 362 MVm{sup −1} for neat and crosslinked films.

  10. Dielectric behaviour of emeraldine base polymer-ZnO nanocomposite film in the low to medium frequency

    Energy Technology Data Exchange (ETDEWEB)

    Singla, M. L., E-mail: singla_min@yahoo.co.in; Sehrawat, Rajeev; Rana, Nidhi [Central Scientific Instruments Organisation (CSIR, New Delhi) (India); Singh, Kulvir [Thapar University (India)

    2011-05-15

    Emeraldine base (EB) polymer-ZnO nanoparticles composite films has been synthesized by solution casting technique on ITO-coated glass substrate and characterized by XRD, FTIR and TEM for their structure and morphology. Dielectric behaviour of these composite films has been investigated in the very low frequency region to medium frequency region (1 kHz-1 MHz). The dielectric constant of the composite with 30% nanoparticles is almost one-tenth of the pure EB. The dielectric value becomes constant in the frequency region greater than 400 kHz. The change in dielectric behaviour of the composite is explained on the basis of multilayered interface formed between the ZnO nanoparticles and emeraldine chains. Nanoparticles have high energy surface which is responsible for the decrease of free volume for the orientation of polymer chains consequently decrease in dielectric constant of the composite. TEM images shows about 10 nm ZnO particles embedded in the emeraldine matrix. From the XRD data it has been observed that the lattice parameters of ZnO have been modified due to the alignment of polymer chains along the basal planes of the nanoparticles. The shift of N=Q=N and N-B-N vibration bands to higher wave number in IR indicates that interaction between emeraldine chain and nanoparticles which provides stability to emeraldine matrix.

  11. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    Institute of Scientific and Technical Information of China (English)

    YU Ai-Fang; QI Qiong; JIANG Peng; JIANG Chao

    2009-01-01

    Carrier mobifity enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobifity of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.

  12. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    Science.gov (United States)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  13. ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air.

    Science.gov (United States)

    Afouxenidis, Dimitrios; Mazzocco, Riccardo; Vourlias, Georgios; Livesley, Peter J; Krier, Anthony; Milne, William I; Kolosov, Oleg; Adamopoulos, George

    2015-04-08

    The replacement of SiO2 gate dielectrics with metal oxides of higher dielectric constant has led to the investigation of a wide range of materials with superior properties compared with SiO2. Despite their attractive properties, these high-k dielectrics are usually manufactured using costly vacuum-based techniques. To overcome this bottleneck, research has focused on the development of alternative deposition methods based on solution-processable metal oxides. Here we report the application of spray pyrolysis for the deposition and investigation of Al2x-1·TixOy dielectrics as a function of the [Ti(4+)]/[Ti(4+)+2·Al(3+)] ratio and their implementation in thin film transistors (TFTs) employing spray-coated ZnO as the active semiconducting channels. The films are studied by UV-visible absorption spectroscopy, spectroscopic ellipsometry, impedance spectroscopy, atomic force microscopy, X-ray diffraction and field-effect measurements. Analyses reveal amorphous Al2x-1·TixOy dielectrics that exhibit a wide band gap (∼4.5 eV), low roughness (∼0.9 nm), high dielectric constant (k ∼ 13), Schottky pinning factor S of ∼0.44 and very low leakage currents (<5 nA/cm(2)). TFTs employing stoichiometric Al2O3·TiO2 gate dielectrics and ZnO semiconducting channels exhibit excellent electron transport characteristics with low operating voltages (∼10 V), negligible hysteresis, high on/off current modulation ratio of ∼10(6), subthreshold swing (SS) of ∼550 mV/dec and electron mobility of ∼10 cm(2) V(-1) s(-1).

  14. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    Atomic layer deposition (ALD) utilizes sequential precursor gas pulses to deposit one monolayer or sub-monolayer of material per cycle based on its self-limiting surface reaction, which offers advantages, such as precise thickness control, thickness uniformity, and conformality. ALD is a powerful means of fabricating nanoscale features in future nanoelectronics, such as contemporary sub-45 nm metal-oxide-semiconductor field effect transistors, photovoltaic cells, near- and far-infrared detectors, and intermediate temperature solid oxide fuel cells. High dielectric constant, kappa, materials have been recognized to be promising candidates to replace traditional SiO2 and SiON, because they enable good scalability of sub-45 nm MOSFET (metal-oxide-semiconductor field-effect transistor) without inducing additional power consumption and heat dissipation. In addition to high dielectric constant, high-kappa materials must meet a number of other requirements, such as low leakage current, high mobility, good thermal and structure stability with Si to withstand high-temperature source-drain activation annealing. In this thesis, atomic layer deposited Er2O3 doped TiO2 is studied and proposed as a thermally stable amorphous high-kappa dielectric on Si substrate. The stabilization of TiO2 in its amorphous state is found to achieve a high permittivity of 36, a hysteresis voltage of less than 10 mV, and a low leakage current density of 10-8 A/cm-2 at -1 MV/cm. In III-V semiconductors, issues including unsatisfied dangling bonds and native oxides often result in inferior surface quality that yields non-negligible leakage currents and degrades the long-term performance of devices. The traditional means for passivating the surface of III-V semiconductors are based on the use of sulfide solutions; however, that only offers good protection against oxidation for a short-term (i.e., one day). In this work, in order to improve the chemical passivation efficacy of III-V semiconductors

  15. Effects of Bi doping on dielectric and ferroelectric properties of PLBZT ferroelectric thin films synthesized by sol–gel processing

    Indian Academy of Sciences (India)

    Hua Wang; Li Liu; Ji-Wen Xu; Chang-Lai Yuan; Ling Yang

    2013-06-01

    [Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of PLBZT were investigated. Bi doping is useful in crystallization of PLBZT films and promoting grain growth. When the Bi-doping content is not more than 0.4, an obvious improvement in dielectric properties and leakage current of PLBZT was confirmed. However, when the Bi-doping content is more than 0.6, the pyrochlore phase appears and the remnant polarization r of PLBZT thin films is smaller than that of (Pb1−La)(Zr1− Ti)O3 (PLZT) thin films without Bi doping. PLBZT thin films with excessive Bi-doping content are easier to fatigue than PLZT thin films.

  16. A study of two-level system defects in dielectric films using superconducting resonators

    Science.gov (United States)

    Khalil, Moe Shwan

    In this dissertation I describe measurements of dielectric loss at microwave frequencies due to two level systems (TLS) using superconducting resonators. Most measurements were performed in a dilution refrigerator at temperatures between 30 and 200 mK and all resonators discussed were fabricated with thin-film superconducting aluminum. I derive the transmission through a non-ideal (mismatched) resonant circuit and find that in general the resonance line-shape is asymmetric. I describe an analysis method for extracting the internal quality factor (Q i), the diameter correction method (DCM), and compare it to a commonly used phenomenological method, the phi rotation method (phiRM). I analytically find that the phiRM deterministically overestimates Qi when the asymmetry of the resonance line-shape is high. Four coplanar resonator geometries were studied, with frequencies spanning 5-7 GHz. They were all superconducting aluminum fabricated on sapphire and silicon substrates. These include a quasi-lumped element resonator, a coplanar strip transmission line resonator, and two hybrid designs that contain both a coplanar strip and a quasi-lumped element. Measured Qi's were as high as 2 x 105 for single photon excitations and there was no systematic variation in loss between quasi-lumped and coplanar strip resonance modes. I also measured the microwave loss tangent of several atomic layer deposition (ALD) grown dielectrics and obtained secondary ion mass spectrometry (SIMS) measurements of the same films. I found that hydrogen defect concentrations were correlated with low temperature microwave loss. In amorphous films that showed excess hydrogen defects on the surface, two independent TLS distributions were required to fit the loss tangent, one for the surface and one for the bulk. In crystalline dielectrics where hydrogen contamination was uniform throughout the bulk, a single bulk TLS distribution was sufficient. Finally, I measured the TLS loss in 250 nm thick HD

  17. Dielectric spectroscopy of electron beam deposited yttrium oxide films examined in metal–insulator–metal sandwich type structures

    Energy Technology Data Exchange (ETDEWEB)

    Wiktorczyk, Tadeusz, E-mail: Tadeusz.Wiktorczyk@pwr.wroc.pl; Biegański, Piotr

    2014-01-31

    This report describes the dielectric properties of electron-beam deposited Y{sub 2}O{sub 3} thin films examined in metal–insulator–metal-type structures fabricated onto quartz substrates. The dielectric measurements have been carried out in the frequency domain from 10 mHz to 10 MHz, with a frequency response analyser. Frequency characteristics of the complex capacitance, as well as Cole–Cole and Nyquist graphs, have been presented and discussed for the temperature range 398–523 K. The results have been analyzed in terms of equivalent circuit models containing resistance–capacitance and constant phase elements (CPE). We have determined the values of the resistance, capacitance and CPE, which characterize the Y{sub 2}O{sub 3} film and near-electrode regions. It has been shown that for high frequencies/low temperatures the dielectric properties are connected with Y{sub 2}O{sub 3} film, while for low frequencies/high temperatures the dielectric response is dominated by the near-electrode regions. In the frequency range 0.1–10 MHz the important contribution of series resistance of electrodes and leads has been observed. - Highlights: • We examine the Al/Y{sub 2}O{sub 3}/Al thin film capacitors for frequency range 10 mHz–10 MHz. • The dielectric data are assigned to Y{sub 2}O{sub 3} and to metal/insulator interfaces. • The capacitance, resistance and constant phase elements describe their properties. • The values of these elements are estimated for temperatures from 398 K to 523 K.

  18. Temperature dependent dielectric and conductivity studies of polyvinyl alcohol-ZnO nanocomposite films by impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hemalatha, K. S.; Damle, R.; Rukmani, K., E-mail: rukmani9909@yahoo.co.in [Department of Physics, Bangalore University, Bangalore 560056 (India); Sriprakash, G. [Department of Physics, Maharani' s Science College for Women, Bangalore 560001 (India); Ambika Prasad, M. V. N. [Department of Physics, Gulbarga University, Gulbarga 585106 (India)

    2015-10-21

    Dielectric and conductivity behaviors of nano ZnO doped polyvinyl alcohol (PVA) composites for various concentrations of dopant were investigated using impedance spectroscopy for a wide range of temperatures (303 K–423 K) and frequencies (5 Hz–30 MHZ). The dielectric properties of host polymer matrix have been improved by the addition of nano ZnO and are found to be highly temperature dependent. Anomalous dielectric behavior was observed in the frequency range of 2.5 MHz–5 MHz. Increase in dielectric permittivity and dielectric loss was observed with respect to temperature. The Cole-Cole plot could be modeled by low resistance regions in a high resistance matrix and the lowest resistance was observed for the 10 mol. % films. The imaginary part of the electric modulus showed asymmetric peaks with the relaxation following Debye nature below and non-Debye nature above the peaks. The ac conductivity is found to obey Jonscher's power law, whereas the variation of dc conductivity with temperature was found to follow Arrhenius behavior. Two different activation energy values were obtained from Arrhenius plot indicating that two conduction mechanisms are involved in the composite films. Fitting the ac conductivity data to Jonscher's law indicates that large polaron assisted tunneling is the most likely conduction mechanism in the composites. Maximum conductivity is observed at 423 K for all the samples and it is optimum for 10 mol. % ZnO doped PVA composite film. Significant increase in dc and ac conductivities in these composite films makes them a potential candidate for application in electronic devices.

  19. Temperature dependent dielectric and conductivity studies of polyvinyl alcohol-ZnO nanocomposite films by impedance spectroscopy

    Science.gov (United States)

    Hemalatha, K. S.; Sriprakash, G.; Ambika Prasad, M. V. N.; Damle, R.; Rukmani, K.

    2015-10-01

    Dielectric and conductivity behaviors of nano ZnO doped polyvinyl alcohol (PVA) composites for various concentrations of dopant were investigated using impedance spectroscopy for a wide range of temperatures (303 K-423 K) and frequencies (5 Hz-30 MHZ). The dielectric properties of host polymer matrix have been improved by the addition of nano ZnO and are found to be highly temperature dependent. Anomalous dielectric behavior was observed in the frequency range of 2.5 MHz-5 MHz. Increase in dielectric permittivity and dielectric loss was observed with respect to temperature. The Cole-Cole plot could be modeled by low resistance regions in a high resistance matrix and the lowest resistance was observed for the 10 mol. % films. The imaginary part of the electric modulus showed asymmetric peaks with the relaxation following Debye nature below and non-Debye nature above the peaks. The ac conductivity is found to obey Jonscher's power law, whereas the variation of dc conductivity with temperature was found to follow Arrhenius behavior. Two different activation energy values were obtained from Arrhenius plot indicating that two conduction mechanisms are involved in the composite films. Fitting the ac conductivity data to Jonscher's law indicates that large polaron assisted tunneling is the most likely conduction mechanism in the composites. Maximum conductivity is observed at 423 K for all the samples and it is optimum for 10 mol. % ZnO doped PVA composite film. Significant increase in dc and ac conductivities in these composite films makes them a potential candidate for application in electronic devices.

  20. Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Institute of Scientific and Technical Information of China (English)

    Wu Chia-Song; Liu Hsing-Chung

    2009-01-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La_2O_3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La_2O_3 thickness. The thin La_2O_3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively.La_2O_3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 ℃ because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La_2O_3 thin film was thermally stable.The DC and RF characteristics of Pt/La_2O_3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined.The measurements indicated that the transistor with the Pt/La_2O_3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La_2O_3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  1. A developed model for the determination of the dielectric function for some absorbing thin films using pseudo-Urbach tail

    Energy Technology Data Exchange (ETDEWEB)

    Falahatgar, S.S. [Department of Physics, Faculty of Science, University of Guilan, Namjoo Ave., P.O. Box: 41335-1914 Rasht (Iran, Islamic Republic of); Ghodsi, F.E., E-mail: feghodsi@guilan.ac.ir [Department of Physics, Faculty of Science, University of Guilan, Namjoo Ave., P.O. Box: 41335-1914 Rasht (Iran, Islamic Republic of)

    2013-03-01

    The proposed model is presented to manipulate the dielectric functions of Tauc–Lorentz–Urbach (TLU) model for determining optical constants in some absorbing thin films within the energy range 1.5–3 eV. This approach is applicable for strong absorbing thin films that their transmittance decreases with increasing energy in the visible region. In the proposed approach, the exponential function (similar to Urbach tail) is added to the Tauc–Lorentz dielectric function for the energy ranges above energy gap. The presented model provided more accurate estimates of the optical constants in the above band gap region compared to Tauc–Lorentz–Urbach (TLU) or Tauc–Lorentz (TL) model for the investigated strong absorbing thin films. The accuracy of the proposed parametric dielectric function model is verified by the use of some literature data. Also, the validity and applicability of this model is confirmed by the results of the optimization process for retrieving of the optical constants and thickness of thin film by a single transmission spectrum. The results of this approach are in good agreement with the optical constants and thickness of literature data and our experimental data.

  2. Dielectric strength of voidless BaTiO{sub 3} films with nano-scale grains fabricated by aerosol deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hong-Ki; Lee, Young-Hie, E-mail: yhlee@kw.ac.kr [Department of Electronics Materials Engineering, Kwangwoon University, Seoul (Korea, Republic of); Lee, Seung-Hwan [Department of Electronics Materials Engineering, Kwangwoon University, Seoul (Korea, Republic of); R and D Center, Samwha Capacitor, Yongin (Korea, Republic of); In Kim, Soo; Woo Lee, Chang [Department of Nano and Electronic Physics, Kookmin University, Seoul (Korea, Republic of); Rag Yoon, Jung [R and D Center, Samwha Capacitor, Yongin (Korea, Republic of); Lee, Sung-Gap [Department of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University, Jinju (Korea, Republic of)

    2014-01-07

    In order to investigate the dielectric strength properties of the BaTiO{sub 3} films with nano-scale grains with uniform grain size and no voids, BaTiO{sub 3} films were fabricated with a thickness of 1 μm by an AD process, and the fabricated films were sintered at 800, 900, and 1000 °C in air and reducing atmosphere. The films have superior dielectric strength properties due to their uniform grain size and high density without any voids. In addition, based on investigation of the leakage current (intrinsic) properties, it was confirmed that the sintering conditions of the reducing atmosphere largely increase leakage currents due to generated electrons and doubly ionized oxygen vacancies following the Poole-Frenkel emission mechanism, and increased leakage currents flow at grain boundary regions. Therefore, we conclude that the extrinsic breakdown factors should be eliminated for superior dielectric strength properties, and it is important to enhance grain boundaries by doping acceptors and rare-earth elements.

  3. Analysis of mobile ionic impurities in polyvinylalcohol thin films by thermal discharge current and dielectric impedance spectroscopy

    Directory of Open Access Journals (Sweden)

    M. Egginger

    2012-12-01

    Full Text Available Polyvinylalcohol (PVA is a water soluble polymer frequently applied in the field of organic electronics for insulating thin film layers. By-products of PVA synthesis are sodium acetate ions which contaminate the polymer material and can impinge on the electronic performance when applied as interlayer dielectrics in thin film transistors. Uncontrollable voltage instabilities and unwanted hysteresis effects are regularly reported with PVA devices. An understanding of these effects require knowledge about the electronic dynamics of the ionic impurities and their influence on the dielectric properties of PVA. Respective data, which are largely unknown, are being presented in this work. Experimental investigations were performed from room temperature to 125°C on drop-cast PVA films of three different quality grades. Data from thermal discharge current (TDC measurements, polarization experiments, and dielectric impedance spectroscopy concurrently show evidence of mobile ionic carriers. Results from TDC measurements indicate the existence of an intrinsic, build-in electric field of pristine PVA films. The field is caused by asymmetric ionic double layer formation at the two different film-interfaces (substrate/PVA and PVA/air. The mobile ions cause strong electrode polarization effects which dominate dielectric impedance spectra. From a quantitative electrode polarization analysis of isothermal impedance spectra temperature dependent values for the concentration, the mobility and conductivity together with characteristic relaxation times of the mobile carriers are given. Also shown are temperature dependent results for the dc-permittivity and the electronic resistivity. The obtained results demonstrate the feasibility to partly remove contaminants from a PVA solution by dialysis cleaning. Such a cleaning procedure reduces the values of ion concentration, conductivity and relaxation frequency.

  4. Dielectric tunability of vertically aligned ferroelectric-metal oxide nanocomposite films controlled by out-of-plane misfit strain

    Science.gov (United States)

    Wu, Huaping; Ma, Xuefu; Zhang, Zheng; Zhu, Jun; Wang, Jie; Chai, Guozhong

    2016-04-01

    A nonlinear thermodynamic model based on the vertically aligned nanocomposite (VAN) thin films of ferroelectric-metal oxide system has been developed to investigate the physical properties of the epitaxial Ba0.6Sr0.4TiO3 (BST) films containing vertical Sm2O3 (SmO) nanopillar arrays on the SrTiO3 substrate. The phase diagrams of out-of-plane lattice mismatch vs. volume fraction of SmO are calculated by minimizing the total free energy. It is found that the phase transformation and dielectric response of BST-SmO VAN systems are extremely dependent on the in-plane misfit strain, the out-of-plane lattice mismatch, the volume fraction of SmO phase, and the external electric field applied to the nanocomposite films at room temperature. In particular, the BST-SmO VAN systems exhibit higher dielectric properties than pure BST films. Giant dielectric response and maximum tunability are obtained near the lattice mismatch where the phase transition occurs. Under the in-plane misfit strain of umf=0.3 % and the out-of-plane lattice mismatch of u3=0.002 , the dielectric tunability can be dramatically enhanced to 90% with the increase of SmO volume fraction, which is well consistent with previous experimental results. This work represents an approach to further understand the dependence of physical properties on the lattice mismatch (in-plane and out-of-plane) and volume fraction, and to manipulate or optimize functionalities in the nanocomposite oxide thin films.

  5. Dielectric and piezoelectric properties of (110) oriented Pb(Zr1-x Ti x )O3 thin films

    Science.gov (United States)

    Jian-Hua, Qiu; Zhi-Hui, Chen; Xiu-Qin, Wang; Ning-Yi, Yuan; Jian-Ning, Ding

    2016-05-01

    A phenomenological Landau-Devonshire theory is developed to investigate the ferroelectric, dielectric, and piezoelectric properties of (110) oriented Pb(Zr1-x Ti x )O3 (x = 0.4, 0.5, 0.6, and 0.7) thin films. At room temperature, the tetragonal a 1 phase, the orthorhombic a 2 c phase, the triclinic γ 1 phase, and the triclinic γ 2 phase are stable. The appearance of the negative polarization component P 2 in the a 2 c phase and the γ 1 phase is attributed to the nonlinear coupling terms in the thermodynamic potential. The γ phase of the Pb(Zr1-x Ti x )O3 thin films has better dielectric and piezoelectric properties than the a 2 c phase and the a 1 phase. The largest dielectric and piezoelectric coefficients are obtained in the Pb(Zr0.5Ti0.5)O3 thin film. The piezoelectric coefficient of 110-150 pm/V is obtained in the (110) oriented Pb(Zr0.5Ti0.5)O3 thin film, and the Pb(Zr0.3Ti0.7)O3 thin film has the remnant polarization and relative dielectric constant of 50 μC/cm2 and 100, respectively, which are in agreement with the experimental measurements reported in the literature. Project supported by the Priority Academic Program Development of Jiangsu Higher Education Institutions, China, the Research Fund of Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, China, Major Projects of Natural Science Research in Jiangsu Province, China (Grant No. 15KJA43002), and Qing Lan Project of Education Department of Jiangsu Province, China.

  6. Dielectric properties of low dielectric constant Ba0.60 Sr0.40Mg0.15Ti0.85O3-Mg2TiO4 composite thin films for tunable applications

    Institute of Scientific and Technical Information of China (English)

    GAO LiNa; ZHAI JiWei; YAO Xi

    2009-01-01

    Ba0.60Sr0.40Mg0.15Ti0.85O3-xmol%Mg2TiO4 (x = 0-40 mol%) (BSTM-MT) composite thin films were fabricated by sol-gel method.The precursor solution of these composite thin films was prepared through mixing the Ba0.60Sr0.40Mg0.15Ti0.85O3 and Mg2Ti04 solution.The microstructures and dielectric tunability of composite thin films were investigated.The dielectric constant of composite thin films can be tailored from 155 to 55 by changing the concentration of Mg2TiO4.The dielectric loss of these composite thin films were still kept below 0.01 and the tunability was above 20% at a dc-applied electric field of 500 kV/cm.Suitable dielectric constant,low dielectric loss,and high tunability of this kind of composite thin films can be useful for potential microwave tunable applications.

  7. Stable dielectric response of low-loss aromatic polythiourea thin films on Pt/SiO2 substrate

    Science.gov (United States)

    Eršte, A.; Fulanović, L.; Čoga, L.; Lin, M.; Thakur, Y.; Zhang, Q. M.; Bobnar, V.

    2016-03-01

    We have investigated dielectric properties of aromatic polythiourea (ArPTU, a polar polymer containing high dipolar moments with very low defect levels) thin films that were developed on Pt/SiO2 substrate. The detected response is compared to the response of commercially available polymers, such as high density polyethylene (HDPE) and polypropylene (PP), which are at present used in foil capacitors. Stable values of the dielectric constant ɛ‧≈5 (being twice higher than in HDPE and PP) over broad temperature and frequency ranges and dielectric losses as low as in commercial systems suggest ArPTU as a promising candidate for future use in a variety of applications.

  8. Efficient Confinement of Ultraviolet Light into the Self-Assembled, Dielectric Colloidal Monolayer on a Flat Aluminum Film

    CERN Document Server

    Lee, Seungwoo

    2014-01-01

    Here we propose the efficient confinement of ultraviolet (UV) light into the plasmonic-photonic crystal hybrid, which can be practically developed by the self-assembly of dielectric colloidal nanosphere monolayer onto a flat aluminum (Al) film. Using a numerical approach, we analyzed modal characteristics of each different resonant mode at the UV wavelengths including surface plasmon polariton (SPP) mode and waveguided (WG) mode and tuned these resonant modes from deep to far UV simply by adjusting the size of dielectric colloidal nanosphere. The calculated quality-factor (Q-factor) of such plasmonic-photonic crystal hybrid is at least one order of magnitude higher than that of the existing Al nanostructures (Al nanoparticles, nanodisks, nanovoids, or nanogratings) standing on the dielectric substrate. Also, we systematically studied how the amount of native oxide, which can be generated during the general process for the deposition of Al, can influence on both the SPP and WG modes of such plasmonic-photonic ...

  9. Comparative Study Between Dispersive and Non-Dispersive Dielectric Permittivity in Spectral Remittances of Chiral Sculptured Zirconia Thin Films

    CERN Document Server

    Babaei, Ferydon; 10.1016/j.optcom.2008.02.012

    2010-01-01

    The transmission and reflection spectra from a right-handed chiral sculptured zirconia thin film are calculated using the piecewise homogeneity approximation method and the Bruggeman homogenization formalism by considering that the propagation of both dispersive and non-dispersive dielectric function occurs for axial and non-axial states. The comparison of spectral results shows that the dispersion of the dielectric function has a considerable effect on the results. In axial excitation of cross-polarized reflectances and co-polarized transmittances the dispersion effect becomes more pronounced at wavelengths further away from the homogenization wavelength. This is also true in case of non-axial excitation of circular transmittances, while there are considerable differences for cross-polarized reflectances where (wavelength) the first Bragg peak occurs. At wavelengths in the vicinity of the homogenization wavelength the dispersion effect of the dielectric function in becomes more significant.

  10. Microwave dielectric and optical properties of amorphous and crystalline Ba0.5Sr0.5TiO3 thin films

    Science.gov (United States)

    Goud, J. Pundareekam; Joseph, Andrews; Ramakanth, S.; Naidu, Kuna Lakshun; Raju, K. C. James

    2016-05-01

    The thin films of composition Ba0.5Sr0.5TiO3 (BST5) were deposited by Pulsed Laser Deposition technique on amorphous fused silica substrates at room temperature (RT) and at 700°C. The film deposited at RT is amorphous while the other crystallized in cubic structure. The refractive index (n) and optical band gap (Eg) extracted from transmission spectra in the 190 -2500 nm range. Microwave dielectric properties were investigated using the Split Post Dielectric Resonators (SPDR) technique at spot frequencies of 10GHz and 20GHz. The experimental results show that thin films deposited at high temperature (700°C) shows very high dielectric constant for both 10GHz and 20 GHz. These high dielectric constant films can be used in a wide range of applications such as capacitors, non-volatile high speed random access memories, and electro-optic devices.

  11. Metal speciation in a complexing soft film layer: a theoretical dielectric relaxation study of coupled chemodynamic and electrodynamic interfacial processes.

    Science.gov (United States)

    Merlin, Jenny; Duval, Jérôme F L

    2012-04-07

    We report a comprehensive formalism for the dynamics of metal speciation across an interphase formed between a complexing soft film layer and an electrolyte solution containing indifferent ions and metal ions that form complexes with charged molecular ligands distributed throughout the film. The analysis integrates the intricate interplay between metal complexation kinetics and diffusive metal transfer from/toward the ligand film, together with the kinetics of metal electrostatic partitioning across the film/solution interphase. This partitioning is determined by the settling dynamics of the interfacial electric double layer (EDL), as governed by time-dependent conduction-diffusion transports of both indifferent and reactive metal ions. The coupling between such chemodynamic and electrodynamic processes is evaluated via derivation of the dielectric permittivity increment for the ligand film/electrolyte interphase that is perturbed upon application of an ac electric field (pulsation ω) between electrodes supporting the films. The dielectric response is obtained from the ω-dependent distributions of all ions across the ligand film, as ruled by coupled Poisson-Nernst-Planck equations amended for a chemical source term involving the intra-film complex formation and dissociation pulsations (ω(a) and ω(d) respectively). Dielectric spectra are discussed for bare and film coated-electrodes over a wide range of field pulsations and Deborah numbers De = ω(a,d)/ω(diff), where ω(diff) is the electric double layer relaxation pulsation. The frequency-dependent dynamic or inert character of the formed metal complexes is then addressed over a time window that ranges from transient to fully relaxed EDL. The shape and magnitude of the dielectric spectra are further shown to reflect the lability of dynamic complexes, i.e. whether the overall speciation process at a given pulsation ω is primarily rate-limited either by complexation kinetics or by ion-transport dynamics. The

  12. Small- and strong-signal dielectric response in a single-crystal film of partially deuterated betaine phosphite

    Science.gov (United States)

    Balashova, E. V.; Krichevtsov, B. B.; Lemanov, V. V.

    2011-06-01

    Poly- and single-crystal films of betaine phosphite deuterated to ˜20% have been grown by evaporation on NdGaO3 (001) substrates with a preliminarily deposited planar interdigital structure of electrodes. The small-signal dielectric response in the 0.1-100.0-kHz frequency range has revealed a strong anomaly in capacitance upon the transition of the films to the ferroelectric state. Application of a bias field brings about suppression and a slight shift of the dielectric anomaly toward higher temperatures. The strong-signal dielectric response has been studied by the Sawyer-Tower method over the frequency range 0.06-3.00 kHz both in the para- and ferroelectric phases. In contrast to the case of a plane-parallel capacitor, in the planar structure studied, the dielectric hysteresis loops exhibit a very small coercivity at low frequencies, which grows with increasing frequency. This difference should be assigned to different domain structures formed in a planeparallel capacitor and in a planar structure in a saturating field. The growth of hysteresis with increasing frequency in a planar structure is considered to be associated with the domain wall motion.

  13. Investigations on laser printing of microcapacitors using poly (methyl methacrylate) dielectric thin films for organic electronics applications

    Science.gov (United States)

    Constantinescu, Catalin; Rapp, Ludovic; Delaporte, Philippe; Alloncle, Anne-Patricia

    2016-06-01

    Thin solid pixels made of Ag/PMMA stacks have been fabricated by laser-induced forward transfer (LIFT), to be tested as thin film microcapacitors in organic electronics applications. The square-shaped laser-printed pixels have a lateral size of ∼350 μm, and the thickness of the dielectric film was varied between 100 and 1500 nm. The pixels were deposited on electrode structures made by LIFT printing of silver nanoparticles ink and paste. Optimal printing conditions led to the fabrication of microcapacitors with typical capacitance in the pF range, tuned by changing the properties of the multilayered structure (e.g. pixel size and/or thickness of the dielectric). Their stability was also investigated over time. We discuss on the morphological and electrical properties of such laser-printed structures, with respect to the impact resistance of the polymer and its suitability for the LIFT process.

  14. Method of making dielectric capacitors with increased dielectric breakdown strength

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  15. Room temperature analysis of dielectric function of ZnO-based thin film on fused quartz substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kurniawan, Robi; Sutjahja, Inge M.; Winata, Toto [Department of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung 40132 (Indonesia); Rusydi, Andrivo; Darma, Yudi, E-mail: yudi@fi.itb.ac.id [Department of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung 40132 (Indonesia); Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); NUSNNI-Nanocore, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

    2015-09-30

    A set of sample consist of pure ZnO and Cu-doped ZnO film were grown on fused-quartz substrates using pulsed laser deposition (PLD) technique. Here, we report room temperature spectroscopic ellipsometry analysis (covering energy range of 0.5 to 6.3 eV) of pure ZnO film and Cu doped ZnO film at 8 in at. %. The thickness of pure ZnO and Cu-doped ZnO film using in this study is about 350 nm. To extract the dielectric function of ZnO thin film, multilayer modeling is performed which takes into account reflections at each interface through Fresnel coefficients. This method based on Drude-Lorentz models that connect with Kramers-Kronig relations. The best fitting of Ψ (amplitude ratio) and Δ (phase difference) taken by SE measurement are obtained reasonably well by mean the universal fitting of three different photon incident angles. The imaginary part of dielectric function (ε{sub 2}) show the broad peak at around 3.3 eV assigned as combination of optical band energy edge with excitonic states. The exitonic states could not be observed clearly in this stage. The evolution of extracted dielectric function is observable by introducing 8% Cu as indicated by decreasing of excitonic intensity. This result indicates the screening of excitonic state. This study will bring us to have a good undestanding for the role of Cu impurities for ZnO thin films.

  16. Room-temperature magneto-dielectric response in multiferroic ZnFe2O4/PMN-PT bilayer thin films

    Science.gov (United States)

    Garg, T.; Kulkarni, A. R.; Venkataramani, N.

    2016-08-01

    The magneto-dielectric response in multiferroic ZnFe2O4/PMN-PT bilayer thin films prepared on a glass substrate using RF magnetron sputtering has been investigated in this work. PMN-PT thin films (i.e. PMN-PT/LCMO/Pt/Ti/glass) deposited on glass were used as a substrate for deposition of ZnFe2O4 thin films. ZnFe2O4 thin films were annealed ex situ at different temperatures. Structural, magnetic, ferroelectric, dielectric and magneto-dielectric studies were carried out on these multiferroic bilayer thin films. Structural studies revealed the presence of each layer in its respective single phase. Magnetic and ferroelectric studies revealed the ferromagnetic and ferroelectric behaviors of these bilayers. To quantify the magnetoelectric coupling, the dielectric constant of the bilayer was measured at room temperature as a function of frequency with and without the applied magnetic field. The magneto-dielectric response MD(%) was calculated by finding the relative change in dielectric constant at 1 kHz as a percentage. The observed MD response was correlated with magnetization of the ferrite layer. An MD response of 2.60% was found for a bilayer film annealed at 350 °C. At this particular annealing temperature, the ZnFe2O4 layer also has the highest saturation magnetization of 1900 G.

  17. A Challenge Beyond Bottom Cells: Top-Illuminated Flexible Organic Solar Cells with Nanostructured Dielectric/Metal/Polymer (DMP) Films.

    Science.gov (United States)

    Ham, Juyoung; Dong, Wan Jae; Park, Jae Yong; Yoo, Chul Jong; Lee, Illhwan; Lee, Jong-Lam

    2015-07-15

    Top-illuminated flexible organic solar cells with a high power conversion efficiency (≈6.75%) are fabricated using a dielectric/metal/polymer (DMP) electrode. Employing a polymer layer (n = 1.49) makes it possible to show the high transmittance, which is insensitive to film thickness, and the excellent haze induced by well-ordered nanopatterns on the DMP electrode, leading to a 28% of enhancement in efficiency compared to bottom cells.

  18. Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

    OpenAIRE

    2013-01-01

    Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other ph...

  19. Molecular beam deposition of high-permittivity polydimethylsiloxane for nanometer-thin elastomer films in dielectric actuators

    DEFF Research Database (Denmark)

    M. Weiss, Florian; Madsen, Frederikke Bahrt; Töpper, Tino

    2016-01-01

    monitoring. Using atomic force microscopy, the film surface morphology and mechanics were characterized after growth termination and subsequent curing. The Young's modulus of the elastomer corresponded to (1.8 ± 0.2) MPa and is thus a factor of two lower than that of DMS-V05. Consequently, the properties......To realize low-voltage dielectric elastomer actuators (DEAs) for artificial muscles, a high-permittivity elastomer and a related thin-film deposition technique must be selected. For polydimethylsiloxane, fillers or functionalized crosslinkers have been incorporated into the elastomer to improve...

  20. Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

    Science.gov (United States)

    Gürbüz, Osman; Okutan, Mustafa

    2016-11-01

    An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO CrxZnO1-x (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr11.88ZnO and Cr15.96ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in ZnO host material increased. Furthermore, by increasing the Cr concentration, the improved electrical performance was observed. The electrical resistivity of samples decreased from 3.98 × 10-2 Ω cm to 4.03 × 10-4 Ω cm with the increase in Cr content. For these reasons, Cr doped ZnO (Cr:ZnO) thin films may be used in microwave devices as the electrical conductivity increases while dielectric constant decreases with the Cr content.

  1. Quantum-Coherence-Assisted Tunable On- and Off-Resonance Tunneling through a Quantum-Dot-Molecule Dielectric Film

    Science.gov (United States)

    Shen, Jian Qi; Zeng, Rui Xi

    2017-02-01

    Quantum-dot-molecular phase coherence (and the relevant quantum-interference-switchable optical response) can be utilized to control electromagnetic wave propagation via a gate voltage, since quantum-dot molecules can exhibit an effect of quantum coherence (phase coherence) when quantum-dot-molecular discrete multilevel transitions are driven by an electromagnetic wave. Interdot tunneling of carriers (electrons and holes) controlled by the gate voltage can lead to destructive quantum interference in a quantum-dot molecule that is coupled to an incident electromagnetic wave, and gives rise to a quantum coherence effect (e.g., electromagnetically induced transparency, EIT) in a quantum-dot-molecule dielectric film. The tunable on- and off-resonance tunneling effect of an incident electromagnetic wave (probe field) through such a quantum-coherent quantum-dot-molecule dielectric film is investigated. It is found that a high gate voltage can lead to the EIT phenomenon of the quantum-dot-molecular systems. Under the condition of on-resonance light tunneling through the present quantum-dot-molecule dielectric film, the probe field should propagate without loss if the probe frequency detuning is zero. Such an effect caused by both EIT and resonant tunneling, which is sensitive to the gate voltage, can be utilized for designing devices such as photonic switching, transistors, and logic gates.

  2. Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

    KAUST Repository

    McKerricher, Garret

    2017-05-03

    There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al2O3 is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al2O3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al2O3 inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al2O3 ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al2O3 films ~120 nm thick, with roughness of <2 nm. Metal-insulator-metal capacitors, show high capacitance density >450 pF/mm2, and quality factors of ~200. The devices have high break down voltages, >25 V, with extremely low leakage currents, <2×10−9 A/cm2 at 1 MV/cm. The capacitors compare well with similar Al2O3 devices fabricated by atomic layer deposition.

  3. Investigations on laser printing of microcapacitors using poly (methyl methacrylate) dielectric thin films for organic electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, Catalin, E-mail: constantinescu@lp3.univ-mrs.fr; Rapp, Ludovic, E-mail: rapp@lp3.univ-mrs.fr; Delaporte, Philippe; Alloncle, Anne-Patricia, E-mail: alloncle@lp3.univ-mrs.fr

    2016-06-30

    Graphical abstract: - Highlights: • Laser-induced transfer is used for the printing of multilayered microcapacitors. • The dielectric film is made of PMMA, and the electrodes are made of Ag. • We discuss on the properties of the polymer vs. the LIFT printing. • The structure and electrical properties of the capacitors are emphasized. - Abstract: Thin solid pixels made of Ag/PMMA stacks have been fabricated by laser-induced forward transfer (LIFT), to be tested as thin film microcapacitors in organic electronics applications. The square-shaped laser-printed pixels have a lateral size of ∼350 μm, and the thickness of the dielectric film was varied between 100 and 1500 nm. The pixels were deposited on electrode structures made by LIFT printing of silver nanoparticles ink and paste. Optimal printing conditions led to the fabrication of microcapacitors with typical capacitance in the pF range, tuned by changing the properties of the multilayered structure (e.g. pixel size and/or thickness of the dielectric). Their stability was also investigated over time. We discuss on the morphological and electrical properties of such laser-printed structures, with respect to the impact resistance of the polymer and its suitability for the LIFT process.

  4. Effect of polymer modification of SiO2 dielectric on the performance of copper phthalocyanine based organic thin film transistor

    Science.gov (United States)

    Padma, N.; Chauhan, A. K.; Sawant, Shilpa N.; Gupta, S. K.

    2012-06-01

    Effect of polystyrene (PS) modification of SiO2 dielectric on the performance of copper phthalocyanine (CuPc) based OFETs was studied. Field effect mobility of holes was found to increase by one order for polystyrene modified dielectric as compared to that on unmodified SiO2. This is attributed to well connected grains and increased crystallinity of CuPc film. Significantly reduced hysteresis was found in the devices with PS/SiO2 dielectric due to almost complete absence of hydroxyl groups at the dielectric/semiconductor interface and hence reduced trap sites.

  5. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  6. Amine-containing film deposited in pulsed dielectric barrier discharge at a high pressure and its cell adsorption behaviours

    Institute of Scientific and Technical Information of China (English)

    Hu Wen-Juan; Xie Fen-Yan; Chen Qiang; Weng Jing

    2009-01-01

    With monomer allylamine, amine-containing functional films were prepared in alternative current pulsed dielectric barrier discharge (DBD) at a high pressure. This paper analyses in detail the film properties and structures, such as hydrophilicity, compounds and microstructures as well as amine density by the water contact angle, Fourier transform infrared spectroscopy, atomic force microscopy, and ultraviolet-visible measurement. The influence of discharge param-eters, in particular applied power, on amine density was investigated. As an application the cell adsorption behaviours on plasma polymerization films was performed in-vitro. The results show that at a high pressure pulsed DBD plasma can polymerize films with sufficient amine group on surface, through which the very efficient cell adsorption behaviours was demonstrated, and the high rate of cell proliferation was visualized.

  7. Dielectric interlayers for increasing the transparency of metal films for mid-infrared attenuated total reflection spectroscopy.

    Science.gov (United States)

    Reithmeier, Martina; Erbe, Andreas

    2010-11-28

    By depositing a continuous, thin metal film on a substrate coated with a mid-infrared (IR) transparent dielectric film that fulfils the role of an index-matching, anti-reflective coating for the metal, the transparency of the metal in the IR wavelength range can be significantly enhanced. This effect is used to yield enhanced absorption in attenuated total internal reflection infrared (ATR-IR) spectroscopy in the presence of continuous thin metal films. The main limitation of the ATR technique when using continuous metal films is the low transparency of metals, especially for infrared light. Computations and experiments show an enhancement in the absorbance of a sample in contact with the metal at certain wavenumbers when the dielectric interlayer is present. The realisation of the setup is the stratified system consisting of zinc selenide-germanium (~1 μm)-gold (40 nm and 20 nm) using the organic solvent acetonitrile as sample. Enhancement is stronger in s- than in p-polarisation. In s-polarisation, enhancement factors of up to 4 have been observed so far in experiments, but calculations show a route to higher enhancements. In addition to the increased absorption, the absorbance spectra show interference fringes which are due to a mismatch in the real part of the refractive index of the sample in contact with the metal film compared to a reference measurement.

  8. Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects

    Directory of Open Access Journals (Sweden)

    F. W. Zeng

    2014-05-01

    Full Text Available Organosilicate glass (OSG is often used as an interlayer dielectric (ILD in high performance integrated circuits. OSG is a brittle material and prone to stress-corrosion cracking reminiscent of that observed in bulk glasses. Of particular concern are chemical-mechanical planarization techniques and wet cleans involving solvents commonly encountered in microelectronics fabrication where the organosilicate film is exposed to aqueous environments. Previous work has focused on the effect of pH, surfactant, and peroxide concentration on the subcritical crack growth of these films. However, little or no attention has focused on the effect of the conjugate acid/base concentration in a buffer. Accordingly, this work examines the “strength” of the buffer solution in both acidic and basic environments. The concentration of the buffer components is varied keeping the ratio of acid/base and therefore pH constant. In addition, the pH was varied by altering the acid/base ratio to ascertain any additional effect of pH. Corrosion tests were conducted with double-cantilever beam fracture mechanics specimens and fracture paths were verified with ATR-FTIR. Shifts in the threshold fracture energy, the lowest energy required for bond rupture in the given environment, GTH, were found to shift to lower values as the concentration of the base in the buffer increased. This effect was found to be much larger than the effect of the hydroxide ion concentration in unbuffered solutions. The results are rationalized in terms of the salient chemical bond breaking process occurring at the crack tip and modeled in terms of the chemical potential of the reactive species.

  9. Corrosion in low dielectric constant Si-O based thin films: Buffer concentration effects

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, F. W.; Lane, M. W., E-mail: mlane@ehc.edu [Department of Chemistry, Emory and Henry College, Emory, Virginia 24340 (United States); Gates, S. M. [IBM TJ Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2014-05-15

    Organosilicate glass (OSG) is often used as an interlayer dielectric (ILD) in high performance integrated circuits. OSG is a brittle material and prone to stress-corrosion cracking reminiscent of that observed in bulk glasses. Of particular concern are chemical-mechanical planarization techniques and wet cleans involving solvents commonly encountered in microelectronics fabrication where the organosilicate film is exposed to aqueous environments. Previous work has focused on the effect of pH, surfactant, and peroxide concentration on the subcritical crack growth of these films. However, little or no attention has focused on the effect of the conjugate acid/base concentration in a buffer. Accordingly, this work examines the “strength” of the buffer solution in both acidic and basic environments. The concentration of the buffer components is varied keeping the ratio of acid/base and therefore pH constant. In addition, the pH was varied by altering the acid/base ratio to ascertain any additional effect of pH. Corrosion tests were conducted with double-cantilever beam fracture mechanics specimens and fracture paths were verified with ATR-FTIR. Shifts in the threshold fracture energy, the lowest energy required for bond rupture in the given environment, G{sub TH}, were found to shift to lower values as the concentration of the base in the buffer increased. This effect was found to be much larger than the effect of the hydroxide ion concentration in unbuffered solutions. The results are rationalized in terms of the salient chemical bond breaking process occurring at the crack tip and modeled in terms of the chemical potential of the reactive species.

  10. Properties of PZT thick film made on LTCC substrates with dielectric intermediate layers

    Science.gov (United States)

    DÄ browski, Arkadiusz; Golonka, Leszek

    2016-11-01

    Results of experiments on application of various interlayers between LTCC (Low Temperature Cofired Ceramics) substrate and thick-film PZT (Lead Zirconate - Titanate) are described in this work. Thick-film intermediate layers were based on several dielectric materials: TiN, Al2O3, SiC, TiO2, SiC, YSZ, BN. Seven screen printable pastes were prepared on the base of powders of mentioned materials with addition of glass and organic vehicle. The substrates were made of 951 (DuPont), CeramTapeGC (CeramTec) and HL2000 (Heraeus) LTCC tapes. Sandwich type transducers, consisting of barrier layer, gold bottom electrode, PZT layer and silver top electrode were prepared and characterized. Basic piezoelectric parameters - permittivity, effective charge constant (d33(eff)) and remanent polarization were determined. The best properties were obtained for substrates made of 951. In general, interlayers based on TiO2, SiC and Al2O3 improved permittivity and charge constant comparing to bare substrates. For example, for 951 substrate the PZT layer exhibited d33(eff) equal to 160, 215, 250 and 230 pC/N for bare substrate, TiO2 interlayer, SiC interlayer and Al2O3 interlayer, respectively. In case of CeramTape GC substrates determined permittivity was equal to 215, 245, 235 and 275 for bare substrate, TiO2 interlayer, SiC interlayer and Al2O3 interlayer, respectively. In case of TiN and BN materials the parameters were considerably deteriorated.

  11. Dielectric properties of Li doped Li-Nb-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Perentzis, G.; Horopanitis, E.E.; Papadimitriou, L. [Aristotle University of Thessaloniki, Department of Physics, 54124 Thessaloniki (Greece); Durman, V.; Saly, V.; Packa, J. [Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava (Slovakia)

    2007-03-15

    Lithium niobate LiNbO{sub 3} was prepared as a thin film layered structure deposited on stainless steel substrate using e-gun evaporation. The Li doping was provided for by the formation of Li-Nb-O/Li/LiNb-O sandwich structure and annealing at about 250 C. AC impedance spectroscopy measurements were performed on the samples at temperatures from the interval between 28 and 165 C and in a frequency range of 10{sup -3} to 10{sup 6} Hz. Using the values Z' and Z'' at different frequencies, the dielectric parameters - parts of the complex permittivity {epsilon}' and {epsilon}'' and loss tangent tan {delta} were calculated. The results prove validity of the proposed equivalent circuit containing parallel RC elements connected in series where the first RC element represents the bulk of material and the second RC element belongs to the double layer at the metal interface. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Decolorization of reactive textile dyes using water falling film dielectric barrier discharge.

    Science.gov (United States)

    Dojčinović, Biljana P; Roglić, Goran M; Obradović, Bratislav M; Kuraica, Milorad M; Kostić, Mirjana M; Nešić, Jelena; Manojlović, Dragan D

    2011-08-30

    Decolorization of reactive textile dyes Reactive Black 5, Reactive Blue 52, Reactive Yellow 125 and Reactive Green 15 was studied using advanced oxidation processes (AOPs) in a non-thermal plasma reactor, based on coaxial water falling film dielectric barrier discharge (DBD). Used initial dye concentrations in the solution were 40.0 and 80.0mg/L. The effects of different initial pH of dye solutions, and addition of homogeneous catalysts (H(2)O(2), Fe(2+) and Cu(2+)) on the decolorization during subsequent recirculation of dye solution through the DBD reactor, i.e. applied energy density (45-315kJ/L) were studied. Influence of residence time was investigated over a period of 24h. Change of pH values and effect of pH adjustments of dye solution after each recirculation on the decolorization was also tested. It was found that the initial pH of dye solutions and pH adjustments of dye solution after each recirculation did not influence the decolorization. The most effective decolorization of 97% was obtained with addition of 10mM H(2)O(2) in a system of 80.0mg/L Reactive Black 5 with applied energy density of 45kJ/L, after residence time of 24h from plasma treatment. Toxicity was evaluated using the brine shrimp Artemia salina as a test organism.

  13. Thin-film dielectric elastomer sensors to measure the contraction force of smooth muscle cells

    Science.gov (United States)

    Araromi, O.; Poulin, A.; Rosset, S.; Favre, M.; Giazzon, M.; Martin-Olmos, C.; Liley, M.; Shea, H.

    2015-04-01

    The development of thin-film dielectric elastomer strain sensors for the characterization of smooth muscle cell (SMC) contraction is presented here. Smooth muscle disorders are an integral part of diseases such as asthma and emphysema. Analytical tools enabling the characterization of SMC function i.e. contractile force and strain, in a low-cost and highly parallelized manner are necessary for toxicology screening and for the development of new and more effective drugs. The main challenge with the design of such tools is the accurate measurement of the extremely low contractile cell forces expected as a result of SMC monolayer contraction (as low as ~ 100 μN). Our approach utilizes ultrathin (~5 μm) and soft elastomer membranes patterned with elastomer-carbon composite electrodes, onto which the SMCs are cultured. The cell contraction induces an in-plane strain in the elastomer membrane, predicted to be in the order 1 %, which can be measured via the change in the membrane capacitance. The cell force can subsequently be deduced knowing the mechanical properties of the elastomer membrane. We discuss the materials and fabrication methods selected for our system and present preliminary results indicating their biocompatibility. We fabricate functional capacitive senor prototypes with good signal stability over the several hours (~ 0.5% variation). We succeed in measuring in-plane strains of 1 % with our fabricated devices with good repeatability and signal to noise ratio.

  14. Nanostructured pyronin Y thin films as a new organic semiconductor: Linear/nonlinear optics, band gap and dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Zahran, H.Y. [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Metallurgical Lab.1, Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Alamri, F.H. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia)

    2017-05-15

    Pyronin Y dye (PY) is a kind of xanthene derivatives. Thin films of pyronin Y were deposited onto highly cleaned glass substrates using low-cost/spin coating technique. The structure properties of pyronin Y thin films with different thicknesses were investigated by using X-ray diffraction (XRD) and atomic force microscope (AFM). PY thin films for all the studied thicknesses have an amorphous structure supporting the short range order of the grain size. AFM supports the nanostructure with spherical/clusters morphologies of the investigated thin films. The optical constants of pyronin Y thin films for various thicknesses were studied by using UV–vis–NIR spectrophotometer in the wavelength range 350–2500 nm. The transmittance T(λ), reflectance R(λ) spectral and absorbance (abs(λ)) were obtained for all film thicknesses at room temperature and the normal light incident. These films showed a high transmittance in the wide scale wavelengths. For different thicknesses of the studied thin films, the optical band gaps were determined and their values around 2 eV. Real and imaginary dielectric constants, dissipation factor and the nonlinear optical parameters were calculated in the wavelengths to the range 300–2500 nm. The pyronin Y is a new organic semiconductor with a good optical absorption in UV–vis regions and it is suitable for nonlinear optical applications. - Highlights: • Pyronin Y (PY) nanostructured thin films were deposited by using spin coating technique. • XRD/AFM were used to study the structure of PY films. • The optical band gap was calculated on the basis of Tauc's model. • Linear/nonlinear optical parameters are calculated and interpreted via the applied optical theories. • PY thin films is a new organic semiconductor for its application in optoelectronic devices.

  15. Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma

    Institute of Scientific and Technical Information of China (English)

    YE Chao; YU Xiao-Zhu; WANG Ting-Ting; NING Zhao-Yuan; XIN Yu; JIANG Mei-Fu

    2005-01-01

    @@ We investigate the effect of CH-doped and F-doped on dielectric properties of SiCOH films deposited by decamethylcyclopentasiloxane (DMCPS) electron cyclotron resonance plasma. The dielectric constant k is closely related to the configurations of films. For thefilms deposited only using DMCPS, the minimum k is as low as2.88. By adding CH4 in the precursor, the k value can be reduced to 2.45 due to the film density decreasing by incorporating large size CHx groups. By adding CHF3 in the precursor, the k value can also be reduced to 2.48due to the incorporation of the weak-polarization F atom. Thus the dielectric constant for SiCOH films depends on not only the film density but also the polarization of atoms. By increasing the film density or by reducing the polarization of atoms under the condition of a lower film density, the low dielectric constant SiCOH films can be obtained.

  16. Poly(3-hexylthiophene) thin-film transistors with variable polymer dielectrics for transfer-printed flexible electronics

    Science.gov (United States)

    Hines, D. R.; Southard, A.; Fuhrer, M. S.

    2008-07-01

    The fabrication of high quality organic thin-film transistors onto flexible, plastic substrates has been extended to include the polymeric semiconductor material poly(3-hexlythiophene). The transfer printing method is used to easily assemble these devices onto either polyethylene terephthalate (PET) or polycarbonate (PC) substrates. A PC dielectric layer is used in conjunction with the PC substrate while both poly(methyl methacrylate) and polystyrene dielectric layers are used in conjunction with the PET substrate. In all cases the mobility of the transfer-printed devices, 0.019-0.041 cm2/V s, is significantly higher than that of the unprinted reference devices (SiO2 dielectric layer on a Si substrate), 0.007 cm2/V s. The width-normalized contact resistance is also lower for the transfer-printed devices, 0.18 MΩ cm, as compared to that for the reference devices, 0.56 MΩ cm. For the devices reported, the threshold voltage becomes more positive as the polar component of the surface energy of the polymer dielectric material increases. These results illustrate the simplicity, power, and versatility of the transfer printing method for the fabrication of high quality flexible electronics.

  17. Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET

    Science.gov (United States)

    Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

    2016-11-01

    Ultrathin Hf-Ti-O higher k gate dielectric films ( 2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) 9.4%, low equivalent gate oxide thickness (EOT) of 0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ( V fb - 1) V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on/ I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO2. With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length ( W/ L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on, I on/ I off ratio in the magnitude of 105, and peak transconductance, as well as suitable threshold voltage (-0.3 -0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL swing <70 mV/decade.

  18. Enhancing the dielectric property of 0.69PZT-0.31PZNN thick films by optimizing the poling condition

    Science.gov (United States)

    Song, Daniel; Woo, Min Sik; Ahn, Jung Hwan; Sung, Tae Hyun

    2015-05-01

    We investigated how the applied electric-field's magnitude and the poling time affected, respectively, the dielectric property and the microstructure of piezoelectric lead zirconate titanate/lead zirconate nickel niobate (PZT-PZNN) thick films in order to apply the films to piezoelectric energy harvesters. Several 300-µm-thick, 10 × 10-mm2 PZT-PZNN squares were tape cast, laminated, sintered, and poled under 2-, 4-, 6-, 10-, 14-, and 15-kV/mm electric fields for 30 min. The 10-kV/mm electric field produced the highest d 33 × g 33 without mechanically damaging the sample. Further, samples were sintered at 950, 1000, and 1020 °C and subsequently poled at 10 kV/mm (previously determined as the magnitude of the optimal poling electric field) for 15, 30, 60, 120, and 240 min to investigate how the poling time affected the piezoelectric ceramic's microstructure. The optimal poling time for all the sintered samples was 60 min. Further, the piezoelectric ceramics composed of small grains and poled longer than 60 min showed higher dielectric constants. However, those composed of large grains and poled for times shorter than 60 min showed higher dielectric constants because the element mobility of the piezoelectric ceramics increased with increasing poling time.

  19. Thin film deposition at atmospheric pressure using dielectric barrier discharges: Advances on three-dimensional porous substrates and functional coatings

    Science.gov (United States)

    Fanelli, Fiorenza; Bosso, Piera; Mastrangelo, Anna Maria; Fracassi, Francesco

    2016-07-01

    Surface processing of materials by atmospheric pressure dielectric barrier discharges (DBDs) has experienced significant growth in recent years. Considerable research efforts have been directed for instance to develop a large variety of processes which exploit different DBD electrode geometries for the direct and remote deposition of thin films from precursors in gas, vapor and aerosol form. This article briefly reviews our recent progress in thin film deposition by DBDs with particular focus on process optimization. The following examples are provided: (i) the plasma-enhanced chemical vapor deposition of thin films on an open-cell foam accomplished by igniting the DBD throughout the entire three-dimensional (3D) porous structure of the substrate, (ii) the preparation of hybrid organic/inorganic nanocomposite coatings using an aerosol-assisted process, (iii) the DBD jet deposition of coatings containing carboxylic acid groups and the improvement of their chemical and morphological stability upon immersion in water.

  20. Comparison Studies of Dielectric and AC Conduction of PbPc and CuPc Thin Films

    Directory of Open Access Journals (Sweden)

    S. Sivamalar

    2012-08-01

    Full Text Available The thin film of Lead Phthalocyanine (PbPc and Copper Phthalocyanine (CuPc on glass are prepared by Vacuum deposition method. Deposition of PbPc and CuPc on pre-cleaned glass substrates under the pressure of 10-6 Torr are achieved by slowly varying current of 20 Volt. The rate of evaporation is properly controlled and maintained constant during all the evaporations. The thicknesses of the films are 150 nm, 300 nm and 450 nm on glass substrate. Dielectric and AC conduction studies of Lead Phthalocyanine and Cupper Phthalocyanine thin films have been studied. The variations of capacitance with frequency at different, permittivity with temperature, capacitance with temperature and ac conductance with frequency at different temperatures of PbPc and CuPc have been studied. The activation energies have been determined from the slope of 1000/T vs. log Gp curves at different frequencies (where Gp= -Eg/RT.

  1. Dielectric dispersion of BaxSr1-xTiO3 thin film with parallel-plate and coplanar interdigital electrodes

    Science.gov (United States)

    Zhang, Xiao-Yu; Song, Qing; Xu, Feng; Sheng, Su; Wang, Peng; Ong, C. K.

    2009-03-01

    Ferroelectric BaxSr1-xTiO3 (BST) thin films with x = 0.25 and 0.5 were grown by pulsed laser deposition on single crystal LaAlO3 and Pt/Ti/SiO2/Si substrates, respectively. Capacitors were then fabricated from the BST thin films based on coplanar interdigital electrodes (CIEs) and parallel-plate electrodes (PPEs). The dielectric properties of the BST film with CIE and PPE were investigated and compared over a wide frequency range from 100 Hz to 10 GHz. The dielectric dispersion in PPE configuration, caused by the interfacial polarization in film/electrode interfaces, exhibited a strong dependence on frequency. However, the permittivity ɛCIE in CIE configuration shows a gentle variation with the frequency indicating interfacial polarization substantially suppressed. The influence upon the dielectric properties of the columnar BST grains due to the use of different forms of electrodes was discussed.

  2. Dielectric behavior of a flexible three-phase polyimide/BaTiO3/multi-walled carbon nanotube composite film

    Science.gov (United States)

    Wang, Junli; Qi, Shengli; Sun, Yiyi; Tian, Guofeng; Wu, Dezhen

    2016-11-01

    A three-phase composite film was produced by inserting multi-walled carbon nanotubes (MWCNTs) and BaTiO3 nanoparticles into polyimide (PI). The combination of in-situ polymerization and water-based preparation involved in the experiment ensured fillers’ homogeneous dispersion in the matrix, which led to flexible shape of the composite films. The dielectric properties of composite films as a function of the frequency and the volume fraction of MWCNTs were studied. Such composite film displayed a high dielectric constant (314.07), low dielectric loss and excellent flexibility at 100Hz in the neighborhood of percolation threshold (9.02 vol%) owing to the special microcapacitor structure. The experimental results were highly consistent with the power law of percolation theory.

  3. Epitaxial growth of dielectric CaCu3Ti4O12 thin films on (001) LaAlO3 by pulsed laser deposition

    Science.gov (United States)

    Lin, Y.; Chen, Y. B.; Garret, T.; Liu, S. W.; Chen, C. L.; Chen, L.; Bontchev, R. P.; Jacobson, A.; Jiang, J. C.; Meletis, E. I.; Horwitz, J.

    2002-07-01

    High dielectric CaCu3Ti4O12 (CCTO) thin films were epitaxially grown on (001) LaAlO3 (LAO) substrates by pulsed laser deposition. Microstructural studies by x-ray diffraction, pole figure measurements, and transmission electron microscopy show that the as-grown films are good single crystalline quality with an interface relationship of (001)CCTO)//(001LAO and 100]CCTO//[100LAO. Dielectric property measurements show that the films have an extremely high dielectric constant with value of 10 000 at 1 MHz at room temperature. It is interesting to note that the twinned substrate results in the formation of twinning or dislocations inside the CCTO film.

  4. Study on Preparation of High-k Organic-Inorganic Thin Film for Organic-Inorganic Thin Film Transistor Gate Dielectric Application

    Science.gov (United States)

    Lee, Wen-Hsi; Liu, Chao-Te; Lee, Ying-Chieh

    2012-06-01

    A simple solution-based deposition technique combined with spin-coating is a plausible way to prepare ultra-thin organic-inorganic nanocomposite films. In this study, we describe the spin-coating deposition of a colloidal nanoparticle suspension to obtain an ultra-thin organic-inorganic composite film as a gate insulator for organic thin film transistor (O-TFT) application. To obtain a homogenous organic-inorganic composite film, well-dispersed TiO2 nanoparticles in γ-butyrolactone and polyimide are important; therefore, several dispersants were assessed on the basis of the measurement of the rheological behavior of slurries. The thickness of the organic-inorganic composite film is mainly determined by the speed of spin-coating and viscosity of slurries. An approximately 4000-Å-thick nanocomposite film with homogeneous distribution of TiO2 nanoparticles in polyimide and low roughness was obtained after curing at 200 °C, resulting in a low leakage current density of the nano-composite film, when less than 2 vol % TiO2 nanoparticles were well dispersed in polyimide slurry. The dielectric constant of the organic-inorganic nanocomposite increases with increasing TiO2 content in polyimide, being situated in the range between 4 and 5.

  5. High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

    Science.gov (United States)

    Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

    2015-12-01

    The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

  6. Polarization and Dielectric Study of Methylammonium Lead Iodide Thin Film to Reveal its Nonferroelectric Nature under Solar Cell Operating Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Hoque, Md Nadim Ferdous; Yang, Mengjin; Li, Zhen; Islam, Nazifah; Pan, Xuan; Zhu, Kai; Fan, Zhaoyang

    2016-07-08

    Researchers have debated whether methylammonium lead iodide (MAPbI3), with a perovskite crystal structure, is ferroelectric and therefore contributes to the current--voltage hysteresis commonly observed in hybrid perovskite solar cells (PSCs). We thoroughly investigated temperature-dependent polarization, dielectric, and impedance spectroscopies, and we found no evidence of ferroelectric effect in a MAPbI3 thin film at normal operating conditions. Therefore, the effect does not contribute to the hysteresis in PSCs, whereas the large component of ionic migration observed may play a critical role. Our temperature-based polarization and dielectric studies find that MAPbI3 exhibits different electrical behaviors below and above ca. 45 degrees C, suggesting a phase transition around this temperature. In particular, we report the activation energies of ionic migration for the two phases and temperature-dependent permittivity of MAPbI3. This study contributes to the understanding of the material properties and device performance of hybrid perovskites.

  7. Investigation of temperature dependent dielectric constant of a sputtered TiN thin film by spectroscopic ellipsometry

    Science.gov (United States)

    Tripura Sundari, S.; Ramaseshan, R.; Jose, Feby; Dash, S.; Tyagi, A. K.

    2014-01-01

    The temperature dependence of optical constants of titanium nitride thin film is investigated using Spectroscopic Ellipsometry (SE) between 1.4 and 5 eV in the temperature range of 300 K to 650 K in steps of 50 K. The real and imaginary parts of the dielectric functions ɛ1(E) and ɛ2(E) marginally increase with increase in temperature. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the temperature behavior. With increase in temperature, the unscreened plasma frequency and broadening marginally decreased and increased, respectively. The parameters of the Lorentz oscillator model also showed that the relaxation time decreased with temperature while the oscillator energies increased. This study shows that owing to the marginal change in the refractive index with temperature, titanium nitride can be employed for surface plasmon sensor applications even in environments where rise in temperature is imminent.

  8. Decolorization of reactive textile dyes using water falling film dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Dojcinovic, Biljana P. [Institute of Chemistry, Technology and Metallurgy, Center of Chemistry, Studentski trg 12-16, 11000 Belgrade (Serbia); Roglic, Goran M. [Faculty of Chemistry, University of Belgrade, P.O. Box 158, 11000 Belgrade (Serbia); Obradovic, Bratislav M., E-mail: obrat@ff.bg.ac.rs [Faculty of Physics, University of Belgrade, P.O. Box 368, 11000 Belgrade (Serbia); Kuraica, Milorad M. [Faculty of Physics, University of Belgrade, P.O. Box 368, 11000 Belgrade (Serbia); Kostic, Mirjana M. [Faculty of Technology and Metallurgy, Department of Textile Engineering, Karnegijeva 4, 11000 Belgrade (Serbia); Nesic, Jelena; Manojlovic, Dragan D. [Faculty of Chemistry, University of Belgrade, P.O. Box 158, 11000 Belgrade (Serbia)

    2011-08-30

    Highlights: {yields} Decolorization of four reactive textile dyes using non-thermal plasma reactor. {yields} Influence of applied energy on decolorization. {yields} Effects of initial pH and addition of homogeneous catalysts. {yields} Toxicity evaluation using the brine shrimp as a test organism. - Abstract: Decolorization of reactive textile dyes Reactive Black 5, Reactive Blue 52, Reactive Yellow 125 and Reactive Green 15 was studied using advanced oxidation processes (AOPs) in a non-thermal plasma reactor, based on coaxial water falling film dielectric barrier discharge (DBD). Used initial dye concentrations in the solution were 40.0 and 80.0 mg/L. The effects of different initial pH of dye solutions, and addition of homogeneous catalysts (H{sub 2}O{sub 2}, Fe{sup 2+} and Cu{sup 2+}) on the decolorization during subsequent recirculation of dye solution through the DBD reactor, i.e. applied energy density (45-315 kJ/L) were studied. Influence of residence time was investigated over a period of 24 h. Change of pH values and effect of pH adjustments of dye solution after each recirculation on the decolorization was also tested. It was found that the initial pH of dye solutions and pH adjustments of dye solution after each recirculation did not influence the decolorization. The most effective decolorization of 97% was obtained with addition of 10 mM H{sub 2}O{sub 2} in a system of 80.0 mg/L Reactive Black 5 with applied energy density of 45 kJ/L, after residence time of 24 h from plasma treatment. Toxicity was evaluated using the brine shrimp Artemia salina as a test organism.

  9. Femtosecond-laser ablation dynamics of dielectrics: basics and applications for thin films

    DEFF Research Database (Denmark)

    Balling, P.; Schou, Jørgen

    2013-01-01

    Laser ablation of dielectrics by ultrashort laser pulses is reviewed. The basic interaction between ultrashort light pulses and the dielectric material is described, and different approaches to the modeling of the femtosecond ablation dynamics are reviewed. Material excitation by ultrashort laser...

  10. Dielectric properties of polyacrylate thick films used in sensors and actuators

    Science.gov (United States)

    Jean-Mistral, C.; Sylvestre, A.; Basrour, S.; Chaillout, J.-J.

    2010-07-01

    Dielectric polymers are emerging electro-active materials used in high performance applications such as micropumps, robots and artificial muscles. The development of such applications requires the use of models taking into account the electrical parameters of the material. However, there is still some controversy over the dielectric constant of the most widely used dielectric polymer (VHB 4910, 3M, USA). In this paper, we present an exhaustive study relating to changes in the dielectric constant of VHB 4910 over wide frequency and temperature ranges. We found that the permittivity was a function of: frequency, temperature, the nature of the electrodes and the pre-stress applied to material. Mechanisms of dielectric polarization (β-relaxation) explain the behaviour in temperature and frequency of this parameter. The use of silver grease-compliant electrodes induces an increase in the dielectric constant which moves to a value of 5.4 (against 4.7 with gold electrodes). A pre-strain applied to the material shows a reduction up to 15% in the value of the dielectric constant. Short-range dipolar relaxation, local mechanical constraints in the material and a possible crystallization of material induced by the stretching are suggested to explain these behaviours. Analytic equations of the dielectric constant according to the temperature and pre-strain are then proposed and used to validate the behaviour of these materials for actuator and scavenger devices.

  11. The thermal stability and electrical properties of LaErO{sub 3} films as high-k gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Gao Xu; Yin Jiang; Xia Yidong; Yin Kuibo; Gao Ligang; Guo Hongxuan; Liu Zhiguo [National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093 (China)], E-mail: jyin@nju.edu.cn

    2008-12-07

    Lanthanum erbium oxide thin films have been deposited on an Si (1 0 0) wafer by using the pulsed laser deposition technique. The thermal and electrical properties of LaErO{sub 3} films were investigated by x-ray diffraction, x-ray photoelectron spectroscopy and high resolution transmission electron microscopy. Capacitance measurements reveal good C-V curves with an equivalent oxide thickness of 1.4 nm and little hysteresis. Transmission electron microscopic images reveal that the 6.5 nm LaErO{sub 3} film shows a thin interfacial layer even after being annealed in N{sub 2} at 700 deg. C for 30 s. X-ray photoelectron spectroscopic spectra indicate that little SiO{sub 2} was formed at the interface during the deposition of LaErO{sub 3} films. The measured thermal and electrical properties of the thin film suggest that the LaErO{sub 3} film should be a promising candidate for future high-k gate dielectrics.

  12. Characterization of oxynitride dielectric films grown in NO/O{sub 2} mixtures by rapid thermal oxynitridation

    Energy Technology Data Exchange (ETDEWEB)

    EVERIST,SARAH C.; MEISENHEIMER,TIMOTHY L.; NELSON,GERALD C.; SMITH,PAUL M.

    2000-02-29

    Ultra-thin oxynitride films were grown on Si by direct rapid thermal processing (RTP) oxynitridation in NO/O{sub 2} ambients with NO concentrations from 5% to 50%. During oxynitridation, nitrogen accumulated at the Si/dielectric interface and the average concentration of in N through the resulting films ranged from 0.3 to 3.0 atomic percent. The average concentration of N in the films increased with increasing NO in the ambient gas, but decreased with longer RTP times. The maximum N concentration remained relatively constant for all RTP times and a given NO/O{sub 2} ambient. Re-oxidation following oxynitridation altered L the N profile and improved the electrical characteristics, with an optimal NO/O{sub 2} mixture in the range of 10% to 25% NO. Re-oxidation by RTP improves the electrical characteristics with respect to the films that were not re-oxidized and produces only slight changes in the N distribution or maximum concentration. The electrical results also indicate that oxynitride films are superior to comparably grown oxide films.

  13. Leakage current mechanisms of ultrathin high-k Er{sub 2}O{sub 3} gate dielectric film

    Energy Technology Data Exchange (ETDEWEB)

    Wu Deqi; Yao Jincheng; Zhao Hongsheng; Chang Aimin; Li Feng, E-mail: changam@ms.xjb.ac.c [Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 (China)

    2009-10-15

    A series of high dielectric material Er{sub 2}O{sub 3} thin films with different thicknesses were deposited on p-type Si (100) substrate by pulse laser deposition at different temperatures. Phase structures of the films were determined by means of X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). Leakage current density was measured with an HP4142B semiconductor parameter analyzer. The XRD and HRTEM results reveal that Er{sub 2}O{sub 3} thin films deposited below 400 {sup 0}C are amorphous, while films deposited from 400 to 840 {sup 0} are well crystallized with (111)-preferential crystallographic orientation. I-V curves show that, for ultrathin crystalline Er{sub 2}O{sub 3} films, the leakage current density increases by almost one order of magnitude from 6.20 x 10{sup -5} to 6.56 x 10{sup -4} A/cm{sup 2}, when the film thickness decreases by only 1.9 nm from 5.7 to 3.8 nm. However the leakage current density of ultrathin amorphous Er{sub 2}O{sub 3} films with a thickness of 3.8 nm is only 1.73 x 10{sup -5} A/cm{sup 2}. Finally, analysis of leakage current density showed that leakage of ultrathin Er{sub 2}O{sub 3} films at high field is mainly caused by Fowler-Nordheim tunneling, and the large leakage of ultrathin crystalline Er{sub 2}O{sub 3} films could arise from impurity defects at the grain boundary.

  14. Investigation on the dielectric response of NdMnO3/LSAT thin films: Effect of 200 MeV Ag+15 ion irradiation

    Science.gov (United States)

    Udeshi, Malay; Vyas, Brinda; Trivedi, Priyanka; Katba, Savan; Ravalia, Ashish; Solanki, P. S.; Shah, N. A.; Asokan, K.; Ojha, S.; Kuberkar, D. G.

    2015-12-01

    We report the results of the modifications in structural and dielectric behaviour of pulsed laser deposited NdMnO3 manganite thin films grown on (1 0 0) single crystalline (LaAlO3)0.3 (Sr2AlTaO6)0.7 substrate irradiated with the 200 MeV Ag+15 ion irradiation having different fluences, ∼5 × 1010, ∼5 × 1011, ∼5 × 1012 ions/cm2. Structural strain was quantified using analysis of X-ray Diffraction data while Rutherford Backscattering measurements were performed on pristine NdMnO3 film to confirm the elemental composition, thickness and oxygen content. Dielectric measurements performed on all the irradiated films show that, the dielectric constant decreases with increase in ion fluence which has been correlated with the irradiation induced increase in strain at the film-substrate interface. The dielectric relaxation behaviour of pristine and irradiated NdMnO3 films have been understood by fitting the dielectric data using the Cole-Cole plots.

  15. Flexible low-voltage polymer thin-film transistors using supercritical CO2-deposited ZrO2 dielectrics.

    Science.gov (United States)

    Wei, Qingshuo; You, Eunyoung; Hendricks, Nicholas R; Briseno, Alejandro L; Watkins, James J

    2012-05-01

    The fabrication of low-voltage flexible organic thin film transistors using zirconia (ZrO(2)) dielectric layers prepared via supercritical fluid deposition was studied. Continuous, single-phase films of approximately 30 nm thick ZrO(2) were grown on polyimide (PI)/aluminum (Al) substrates at 250 °C via hydrolysis of tetrakis(2,2,6,6-tetramethyl-3,5-heptane-dionato) zirconium in supercritical carbon dioxide. This dielectric layer showed a high areal capacitance of 317 nF cm(-2) at 1 kHz and a low leakage current of 1.8 × 10(-6) A cm(-2) at an applied voltage of -3 V. By using poly(3-hexylthiophene) (P3HT) as a semiconductor, we have fabricated flexible thin film transistors operating at V(DS) = -0.5 V and V(G) in a range from 0.5 V to -4 V, with on/off ratios on the order of 1 × 10(3) and mobility values higher than 0.1 cm(2)/(V s).

  16. Formation of a strong electric field resulting in the excitation of microplasma discharges at the edge of a dielectric film on a metal in a plasma flow

    Science.gov (United States)

    Ivanov, V. A.; Sakharov, A. S.; Konyzhev, M. E.

    2016-06-01

    Results are presented from experimental and analytical studies of the processes resulting in the excitation of microplasma discharges (MPDs) on a metal surface partially covered with a thin dielectric film under the action of an external plasma flow in vacuum. It is shown experimentally that MPDs are excited at the interface between the open metal surface and the region covered by the dielectric film. The probability of MPD excitation is investigated as a function of the thickness of the dielectric film deposited on the metal. It is found that, for a film thickness of 1 μm, the probability of MPD excitation is close to unity. As the film thickness decreases below ~10 nm or increases above ~10 μm, the probability of MPD excitation is reduced by more than two orders of magnitude. A two-dimensional kinetic numerical code is developed that allows one to model the processes of Debye sheath formation and generation of a strong electric field near the edge of a finite-thickness dielectric film on a metal surface in a plasma flow for different configurations of the film edge. It is shown that the maximum value of the tangential component of the electric field is reached at the film edge and amounts to E max ≈ |φ0|/2 d (where φ0 qualitative idea about the mechanism of the formation of a strong electric field resulting in the excitation of MPDs at the edge of a dielectric film on a metal surface in a plasma flow and agree with experimental data.

  17. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Directory of Open Access Journals (Sweden)

    T. Santhosh Kumar

    2014-06-01

    Full Text Available We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110 direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCoxTiO3 (x = 0.05 thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3 over a wide range of frequencies for 75% OMP. The role of electric field frequency (f and OMP on the ac-conductivity of (Mg0.95Co0.05TiO3 have been studied. A progressive increase in the activation energy (Ea and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  18. Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Science.gov (United States)

    Kumar, T. Santhosh; Gogoi, P.; Thota, S.; Pamu, D.

    2014-06-01

    We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP) on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110) direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCox)TiO3 (x = 0.05) thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ˜ 1.2 × 10-3) over a wide range of frequencies for 75% OMP. The role of electric field frequency (f) and OMP on the ac-conductivity of (Mg0.95Co0.05)TiO3 have been studied. A progressive increase in the activation energy (Ea) and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10-9 to 1.14 × 10-9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

  19. Selective femtosecond laser structuring of dielectric thin films with different band gaps: a time-resolved study of ablation mechanisms

    Science.gov (United States)

    Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

    2016-12-01

    Ultrashort pulse lasers have been increasingly gaining importance for the selective structuring of dielectric thin films in industrial applications. In a variety of works the ablation of thin SiO2 and SiNx films from Si substrates has been investigated with near infrared laser wavelengths with photon energies of about 1.2 eV where both dielectrics are transparent (E_{{gap,SiO2}}≈ 8 eV; E_{{gap,SiN}x}≈ 2.5 eV). In these works it was found that few 100 nm thick SiO2 films are selectively ablated with a "lift-off" initiated by confined laser ablation whereas the SiN_{{x}} films are ablated by a combination of confined and direct laser ablation. In the work at hand, ultrafast pump-probe imaging was applied to compare the laser ablation dynamics of the two thin film systems directly with the uncoated Si substrate—on the same setup and under identical parameters. On the SiO2 sample, results show the pulse absorption in the Si substrate, leading to the confined ablation of the SiO2 layer by the expansion of the substrate. On the SiN_{{x}} sample, direct absorption in the layer is observed leading to its removal by evaporation. The pump-probe measurements combined with reflectivity corrected threshold fluence investigations suggest that melting of the Si substrate is sufficient to initiate the lift-off of an overlaying transparent film—evaporation of the substrate seems not to be necessary.

  20. Room-temperature preparation and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on flexible polyimide substrates via pulsed laser deposition method

    Science.gov (United States)

    Mo, Zhong; Wu, Guangheng; Bao, Dinghua

    2012-05-01

    Bi3.95Er0.05Ti3O12 (BErT) thin films were prepared on flexible polyimide (PI) substrates at room temperature by pulsed laser deposition. These BErT thin films deposited under low oxygen pressures are dense, uniform, and crack-free with an amorphous structure. The highly flexible thin film with a thickness of about 160 nm deposited under 3 Pa oxygen pressure shows excellent dielectric characteristics, such as a dielectric constant of 51 and a dielectric loss of 0.025, and a maximum capacitance density of 237 nF/cm2 at 1 kHz. When it is curved at different curvature radii (by applying external deformation), the thin film still remains superior dielectric performance. In addition, the thin film also shows good dielectric aging characteristic (or thermal stability) and high optical transparency. BErT thin films can find applications in flexible optoelectronic devices and embedded capacitors.

  1. Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °C

    Science.gov (United States)

    Choi, J. Y.; Kim, S.; Hwang, B.-U.; Lee, N.-E.; Lee, S. Y.

    2016-12-01

    Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al2O3. To improve the mechanical stability, Al2O3 has been used as a buffer layer on the flexible substrate. The Al2O3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.

  2. Electrodeposition of Water-Repellent Organic Dielectric Film as an Anti-Sticking Coating on Microelectromechanical System Devices

    Science.gov (United States)

    Sakata, Tomomi; Kuwabara, Kei; Shimamura, Toshishige; Sato, Norio; Nagase, Masao; Shimoyama, Nobuhiro; Kudou, Kazuhisa; Machida, Katsuyuki; Ishii, Hiromu

    2007-09-01

    In this paper, we propose a technique of preventing both wet-release-related and in-use sticking of actuators in microelectromechanical system (MEMS) devices. The technique involves the electrodeposition of a water-repellent organic dielectric film that renders the microstructure surface inactive towards the water used for rinsing. The source material is a core/shell emulsion, which consists of sulfonium cations with epoxy groups containing water-repellent silicone polymers. Applying this technique to the encapsulation of a microstructure confirms its effectiveness in preventing both release-related sticking and in-use sticking of a MEMS structure.

  3. Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

    Science.gov (United States)

    Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

    2017-03-01

    Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant (ɛ r = 3334), low loss (tan δ = 3.54), capacitance (C = 4951 nF), which might satisfy the requirements of embedded capacitor.

  4. Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

    Science.gov (United States)

    Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

    2017-07-01

    Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

  5. Chemical shift and surface characteristics of Al-doped ZnO thin film on SiOC dielectrics.

    Science.gov (United States)

    Oh, Teresa; Lee, Sang Yeol

    2013-10-01

    Aluminum doped zinc oxide (AZO) films were fabricated on SiOC/p-Si wafer and SiOC film was prepared on a p-type Si substrate with the SiC target at oxygen ambient with the gas flow rate of 5-30 sccm by a RF magnetron sputter. C-V curve of SiOC/Si wafer was measured to observe the relationship between the polarity of SiOC dielectrics and the change of capacitance depending on oxygen gas flow rate. The SiOC film could be controlled to be polar or nonpolar, and their surface energy was changed depending on the polarity. Smooth surface is essential to improve the TFT performance. AZO-TFTs used smooth SiOC film with low polarity as a gate insulator was observed to show low leakage current (IL) and low subthreshold voltage swing. It is proposed that SiOC film with high degree amorphous structure as a gate insulator between AZO and Si wafer could solve problems of the mismatched interfaces, which was originated from the electron scattering due to the grain boundary.

  6. Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors.

    Science.gov (United States)

    Gu, Zhi-Gang; Chen, Shan-Ci; Fu, Wen-Qiang; Zheng, Qingdong; Zhang, Jian

    2017-03-01

    Metal-organic framework (MOF) thin films are important in the application of sensors and devices. However, the application of MOF thin films in organic field effect transistors (OFETs) is still a challenge to date. Here, we first use the MOF thin film prepared by a liquid-phase epitaxial (LPE) approach (also called SURMOFs) to modify the SiO2 dielectric layer in the OFETs. After the semiconductive polymer of PTB7-Th (poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b']dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) was coated on MOF/SiO2 and two electrodes on the semiconducting film were deposited sequentially, MOF-based OFETs were fabricated successfully. By controlling the LPE cycles of SURMOF HKUST-1 (also named Cu3(BTC)2, BTC = 1,3,5-benzenetricarboxylate), the performance of the HKUST-1/SiO2-based OFETs showed high charge mobility and low threshold voltage. This first report on the application of MOF thin film in OFETs will offer an effective approach for designing a new kind of materials for the OFET application.

  7. Irradiation Effects on Microstructure and Dielectric Properties of Ba[(Mg0.32Co0.02Nb0.66]O3 [BMCN] Thin Films

    Directory of Open Access Journals (Sweden)

    N.V. Patel

    2012-12-01

    Full Text Available Ba[(Mg0.32Co0.02Nb0.66]O3 [BMCN] thin films prepared on Pt-Si, MgO, Silicon and ITO coated glass substrates by Pulsed Laser Deposition Technique are investigated. Relative growth parameters suggest that ITO coated glass substrate has good potential for growing films with near Nano size columnar grains. In comparison to bulk, dielectric constant and dielectric loss increases in BMCN films. This undesirable rise in dielectric loss can be drastically reduced by a factor of more than 1/100th times through Ag15+ ion irradiation at 1 × 1012 ions/cm2 dose.

  8. Effect of N2 Plasma Annealing on Properties of Fluorine Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra-Large-Scale Integrated Circuits

    Institute of Scientific and Technical Information of China (English)

    张卫; 王鹏飞; 丁士进; 王季陶; 李伟

    2002-01-01

    The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated.The stability of the dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing. After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50℃, the dielectric constant variation of the annealed SiOF films is only 1.5%, while the variation for those SiOF films without annealing is 15.5%. Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films. These unstable Si-F2 bonds are suitable to react with water, resulting in the degradation of SiOF film properties. Therefore, the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.

  9. Investigation of high-quality ultra-thin LaAlO{sub 3} films as high-k gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, X B [National Laboratory of Solid State Microstructures, Nanjing University, Hankou Road 22, Nanjing 210093 (China); Liu, Z G [National Laboratory of Solid State Microstructures, Nanjing University, Hankou Road 22, Nanjing 210093 (China); Zhang, X [Institute of Microelectronics, Peking University, Beijing 100871 (China); Huang, R [Institute of Microelectronics, Peking University, Beijing 100871 (China); Zhou, H W [Digital DNA Laboratories, Motorola Inc. (China); Wang, X P [Digital DNA Laboratories, Motorola Inc.(China); Nguyen, Bich-Yen [Digital DNA Laboratories, Motorola Inc. (China)

    2003-12-07

    We have studied the formation of a high-quality LaAlO{sub 3} (LAO) film directly on silicon substrates by the pulsed laser deposition method as a novel high-k gate dielectric. The LAO films can remain amorphous at temperatures up to 850 deg. C. An atomic force microscopy study indicated a very smooth surface of the deposited films with a rms of 0.14 nm for an 8 nm LAO film. The structures and electrical properties of metal-dielectric-semiconductor (Pt/LAO/Si) capacitors were investigated with LAO films deposited under different ambient conditions. High-resolution transmission electron microscopy indicated that interfacial reactions often occur for films of LAO deposited under oxygen ambient. A small effective oxide thickness of 1.2 nm was obtained for those films deposited under 20 Pa nitrogen ambient, with the corresponding leakage current density 17.1 mA cm{sup -2} at +1 V gate voltage. It is proposed that amorphous LAO films are a novel promising alternative high-k gate dielectric material in future ultra-large scale integrated devices.

  10. Flash sintering of dielectric nanoparticles as a percolation phenomenon through a softened film

    OpenAIRE

    Chaim, Rachman; Chevallier, Geoffroy; Weibel, Alicia; Estournès, Claude

    2017-01-01

    International audience; Recent work [Biesuz et al., J. Appl. Phys. 120, 145107 (2016)] showed analogies between the flash sintering and dielectric breakdown in α-aluminas pre-sintered to different densities. Here, we show that flash sintering of dielectric nanoparticles can be described as a universal behavior by the percolation model. The electrical system is composed of particles and their contact point resistances, the latter softened first due to preferred local Joule heating and thermal ...

  11. ac conductivity and dielectric properties of amorphous Se{sub 80}Te{sub 20-x}Ge{sub x} chalcogenide glass film compositions

    Energy Technology Data Exchange (ETDEWEB)

    Hegab, N.A. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)], E-mail: abir_net_2005@hotmail.com; Afifi, M.A.; Atyia, H.E.; Farid, A.S. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt)

    2009-05-27

    Thin films of the prepared Se{sub 80}Te{sub 20-x}Ge{sub x} (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the {omega}{sup s} law, in accordance with the hopping model, s is found to be temperature dependent (s < 1) and its value goes down as the temperature is increased. The temperature dependence of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping (CBH) model. Values of dielectric constant {epsilon}{sub 1} and dielectric loss {epsilon}{sub 2} were found to decrease with frequency and increase with temperature. The maximum barrier height W{sub m}, calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

  12. Band Alignment and Optical Properties of (ZrO20.66(HfO20.34 Gate Dielectrics Thin Films on p-Si (100

    Directory of Open Access Journals (Sweden)

    Dahlang Tahir

    2011-11-01

    Full Text Available (ZrO20.66(HfO20.34 dielectric films on p-Si (100 were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO20.66(HfO20.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, The dielectric function ε (k, ω, index of refraction n and the extinction coefficient k for the (ZrO20.66(HfO20.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε (k,ω-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

  13. Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range

    Energy Technology Data Exchange (ETDEWEB)

    Agocs, Emil, E-mail: agocsemil@gmail.com [Doctoral School of Molecular and Nanotechnologies, Faculty of Information Technology, University of Pannonia, Egyetem u.10, Veszprém, H-8200 (Hungary); Research Institute for Technical Physics and Material Science (MFA), Research Centre for Natural Sciences, H-1525 Budapest, POB 49 (Hungary); Nassiopoulou, Androula G. [IMEL/NCSR Demokritos, Aghia Paraskevi, 153 10 Athens (Greece); Milita, Silvia [CNR-IMM Sezione Bologna, Via Gobetti, 40129 Bologna (Italy); Petrik, Peter [Doctoral School of Molecular and Nanotechnologies, Faculty of Information Technology, University of Pannonia, Egyetem u.10, Veszprém, H-8200 (Hungary); Research Institute for Technical Physics and Material Science (MFA), Research Centre for Natural Sciences, H-1525 Budapest, POB 49 (Hungary)

    2013-08-31

    Due to quantum-confinement the band structure of silicon nanocrystals (NCs) is different from that of bulk silicon and strongly depends on the NC size. The samples we investigated have been prepared using chemical vapor deposition and annealing allowing a good control of the parameters in terms of both thickness and NC size, being suitable as model systems. The problem of the analysis is that the critical point features of the dielectric function can only be described with acceptable accuracy when using numerous parameters. The majority of the fit parameters are describing the oscillators of different line-shapes. In this work we show how the number of fit parameters can be reduced by a systematic analysis to find non-sensitive and correlating parameters to fix and couple as much parameters as possible. - Highlights: ► Silicon nanocrystal films were measured by spectroscopic ellipsometry. ► The dielectric functions were modeled with Adachi's model dielectric function. ► We developed a parameter analysis and fitting algorithm. ► The non-sensitive parameters were coupled and neglected. ► The behaviors of key material parameters were determined.

  14. Theoretical analysis of ion kinetic energies and DLC film deposition by CH4+Ar (He) dielectric barrier discharge plasmas

    Institute of Scientific and Technical Information of China (English)

    Liu Yan-Hong; Zhang Jia-Liang; Ma Teng-Cai; Li Jian; Liu Dong-Ping

    2007-01-01

    The kinetic energy of ions in dielectric barrier discharge plasmas are analysed theoretically using the model of binary collisions between ions and gas molecules. Langevin equation for ions in other gases, Blanc law for ions in mixed gases, and the two-temperature model for ions at higher reduced field are used to determine the ion mobility. The kinetic energies of ions in CH4 + Ar(He) dielectric barrier discharge plasma at a fixed total gas pressure and various Ar (He)concentrations are calculated. It is found that with increasing Ar (He) concentration in CH4 + Ar (He) from 20% to 83%,the CH4+ kinetic energy increases from 69.6 (43.9) to 92.1 (128.5)eV, while the Ar+ (He+) kinetic energy decreases from 97 (145.2) to 78.8 (75.5)eV. The increase of CH4+ kinetic energy is responsible for the increase of hardness of diamond-like carbon films deposited by CH4 + Ar (He) dielectric barrier discharge without bias voltage over substrates.

  15. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  16. Trapping of hydrogen in hafnium-based high kappa dielectric thin films for advanced CMOS applications

    Science.gov (United States)

    Ukirde, Vaishali

    In recent years, advanced high kappa gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. Extensive efforts have been taken to understand the effects of hydrogen impurities in semiconductors and its behavior such as incorporation, diffusion, trapping and release with the aim of controlling and using it to optimize the performance of electronic device structures. In this dissertation, a systematic study of hydrogen trapping and the role of carbon impurities in various alternate gate dielectric candidates, HfO2/Si, HfxSi1-xO2/Si, HfON/Si and HfON(C)/Si is presented. It has been shown that processing of high kappa dielectrics may lead to some crystallization issues. Rutherford backscattering spectroscopy (RBS) for measuring oxygen deficiencies, elastic recoil detection analysis (ERDA) for quantifying hydrogen and nuclear reaction analysis (NRA) for quantifying carbon, X-ray diffraction (XRD) for measuring degree of crystallinity and X-ray photoelectron spectroscopy (XPS) were used to characterize these thin dielectric materials. ERDA data are used to characterize the evolution of hydrogen during annealing in hydrogen ambient in combination with preprocessing in oxygen and nitrogen.

  17. Chain relaxation in thin polymer films: turning a dielectric type-B polymer into a type-A' one.

    Science.gov (United States)

    Solar, Mathieu; Paul, Wolfgang

    2017-02-22

    A molecular dynamics simulation study of chain relaxation in a thin polymer film is presented, studying the dielectric response of a random copolymer of cis and trans 1,4-polybutadiene, a type B polymer without net chain dipole moment, confined between graphite walls. We stress the orientational effect of the attractive walls, inducing polarization in the vicinity of the walls, while the center of the film stays bulk-like. This polarization leads to a net dipole moment of the adsorbed chains, which is perpendicular to their end-to-end vector, which we termed as type A' behavior. In this situation, the dipole moment relaxes only upon desorption of the chains from the wall, a dynamic process which occurs on timescales much longer than the bulk relaxation time of the polymer.

  18. Effect of conductive BaPbO3 electrode on the structural and dielectric properties of (Pb,Ba)ZrO3 films

    Science.gov (United States)

    Wu, Lin-Jung; Wu, Jenn-Ming

    2007-08-01

    Highly (1 1 1)-oriented (Pb,Ba)ZrO3 (PBZ) thin films were deposited on BaPbO3(BPO) electrode at different deposition temperatures and different thicknesses. As the deposition temperature increased, the dielectric constant and tunability increased from 150 and 4% to 500 and 56%, respectively. A current transient peak observed prior to dielectric degradation can be related to oxygen vacancy migration (redistribution) with space-charge-limited current transient or modulation of the electric conductivity. We infer that an interfacial layer lying between the PBZ and BPO effectively increases the oxygen vacancy (density ~1020 cm-3) mobility by Pb4+ diffusing into the PBZ films.

  19. Monolithic integrated system with an electrowetting-on-dielectric actuator and a film-bulk-acoustic-resonator sensor

    Science.gov (United States)

    Zhang, Menglun; Cui, Weiwei; Chen, Xuejiao; Wang, Chao; Pang, Wei; Duan, Xuexin; Zhang, Daihua; Zhang, Hao

    2015-02-01

    Although digital microfluidics has shown great potential in a wide range of applications, a lab-on-a-chip with integrated digital droplet actuators and powerful biochemical sensors is still lacking. To address the demand, a fully integrated chip with electrowetting-on-dielectric (EWOD) and a film bulk acoustic resonator (FBAR) sensor is introduced, where an EWOD actuator manipulates digital droplets and the FBAR sensor detects the presence of substances in the droplets, respectively. The piezoelectric layer of the FBAR sensor and the dielectric layer of the EWOD share the same aluminum nitride (AlN) thin film, which is a key factor to achieve the full integration of the two completely different devices. The liquid droplets are reliably managed by the EWOD actuator to sit on or move off the FBAR sensor precisely. Sessile drop experiments and limit of detection (LOD) experiments are carried out to characterize the EWOD actuator and the FBAR sensor, respectively. Taking advantage of the digital droplet operation, a ‘dry sensing mode’ of the FBAR sensor in the lab-on-a-chip microsystem is proposed, which has a much higher signal to noise ratio than the conventional ‘wet sensing mode’. Hg2+ droplets with various concentrations are transported and sensed to demonstrate the capability of the integrated system. The EWOD-FBAR chip is expected to play an important role in many complex lab-on-a-chip applications.

  20. Impact of the Capacitance of the Dielectric on the Contact Resistance of Organic Thin-Film Transistors

    Science.gov (United States)

    Zojer, K.; Zojer, E.; Fernandez, A. F.; Gruber, M.

    2015-10-01

    As the operation of organic thin-film transistors relies exclusively on injected charge carriers, the gate-induced field assumes a dual role: It is responsible for charge-carrier accumulation and, provided that an injection barrier at the contact-semiconductor interface is present, aids charge-carrier injection across this barrier. Besides the gate-source bias, the thickness of the insulator and its dielectric constant influence the gate field. Here, we explore the impact of the capacitance of the gate dielectric on the performance of organic thin-film transistors utilizing drift-diffusion-based simulations comprising a self-consistent consideration of injection. Upon varying the capacitance of the insulating layer, we observe a conceptually different behavior for top-contact and bottom-contact architectures. Top-contact devices possess a nearly constant contact voltage in the linear regime leading to an apparent mobility lowering. In strong contrast, bottom-contact architectures possess non-Ohmic contact resistances in the linear regime due to a contact voltage whose value depends strongly on both the gate-source bias and the capacitance. Counterintuitively, this is accompanied by a mobility being apparently unaffected by the substantial contact resistance. Additionally, threshold-voltage shifts appear due to gate-limited injection. The latter is particularly dominant in bottom-contact architectures, where the threshold voltages steeply increase with the thickness of the insulating layer.

  1. Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel technique

    Science.gov (United States)

    Huitema, L.; Cernea, M.; Crunteanu, A.; Trupina, L.; Nedelcu, L.; Banciu, M. G.; Ghalem, A.; Rammal, M.; Madrangeas, V.; Passerieux, D.; Dutheil, P.; Dumas-Bouchiat, F.; Marchet, P.; Champeaux, C.

    2016-04-01

    We report for the first time the microwave characterization of 0.92(Bi0.5Na0.5)TiO3-0.08BaTiO3 (BNT-BT0.08) ferroelectric thin films fabricated by the sol-gel method and integrated in both planar and out-of-plane tunable capacitors for agile high-frequency applications and particularly on the WiFi frequency band from 2.4 GHz to 2.49 GHz. The permittivity and loss tangent of the realized BNT-BT0.08 layers have been first measured by a resonant cavity method working at 12.5 GHz. Then, we integrated the ferroelectric material in planar inter-digitated capacitors (IDC) and in out-of-plane metal-insulator-metal (MIM) devices and investigated their specific properties (dielectric tunability and losses) on the whole 100 MHz-15 GHz frequency domain. The 3D finite-elements electromagnetic simulations of the IDC capacitances are fitting very well with their measured responses and confirm the dielectric properties determined with the cavity method. While IDCs are not exhibiting an optimal tunability, the MIM capacitor devices with optimized Ir/MgO(100) bottom electrodes demonstrate a high dielectric tunability, of 30% at 2.45 GHz under applied voltages as low as 10 V, and it is reaching 50% under 20 V voltage bias at the same frequency. These high-frequency properties of the MIM devices integrating the BNT-BT0.08 films, combining a high tunability under low applied voltages indicate a wide integration potential for tunable devices in the microwave domain and particularly at 2.45 GHz, corresponding to the widely used industrial, scientific, and medical frequency band.

  2. Influence of annealing temperature on the dielectric properties of BaSrTiO3 thin films deposited on various substrates

    Science.gov (United States)

    Lee, Chil-Hyoung; Oh, Young-Jei; Lee, Deuk Yong; Choi, Doo-Jin

    2016-11-01

    (Ba0.5Sr0.5)TiO3 (BST) thin films were deposited on various substrates, such as LaAlO3(100), MgO(100), R-plane sapphire[1012], and polycrystalline sapphire, by using RF magnetron sputtering to investigate the influence of annealing temperature on the dielectric properties and the tunability of the films. The BST thin films deposited on LaAlO3(100) exhibited a high tunability of 42 % and a low dielectric loss of 0.004 due to the small differences in the lattice parameters and the thermal expansion coefficients between the BST films and the substrates. In contrast, the BST films deposited on a polycrystalline sapphire, exhibiting a relatively high mismatch factor, showed the tunability of 24 % and a dielectric loss of 0.007. The BST thin films on LaAlO3(100), MgO(100), R-plane sapphire[1012], and polycrystalline sapphire were annealed. The optimized annealing temperatures were found to be 950 °C, 1050 °C, 1100 °C, and 1150 °C, respectively. The difference in annealing temperature is likely due to the differences in the lattice parameters and the thermal expansion coefficients between the films and the substrates.

  3. Spectral, structural, optical and dielectrical studies of UV irradiated Rose Bengal thin films prepared by spin coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Zeyada, H.M., E-mail: hzeyada@gmail.com [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Youssif, M.I.; El-Ghamaz, N.A. [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Aboderbala, M.E.O. [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Department of Physics, Faculty of Science, AlJabl Al Gharbi University (Libya)

    2017-02-01

    Optical properties of pristine and UV irradiated Rose Bengal (RB) films have been investigated using transmittance and reflectance methods. The refractive index(n) and extinction coefficient (k) have been calculated from the absolute values of transmission and reflection spectrum. Single oscillator parameters and Drude model of free carrier absorption have been applied for analysis of the refractive index dispersion. Within the frame work of the band-to-band electron transitions theory; the fundamental absorption edge data were analyzed. Our results suggest that thickness of RB films has no effect on the absorption or the refractive indices in the investigated thicknesses range and within the experimental error. Structural transformation of films from amorphous to polycrystalline has been observed upon UV irradiation. Accordingly, the decreases of all of the absorption coefficient, the energy gap and the refractive index of RB films have been detected. Furthermore, the dependence of the optical functions on UV exposure times has been discussed based on the spectral distribution of the dielectric constant.

  4. Spectral, structural, optical and dielectrical studies of UV irradiated Rose Bengal thin films prepared by spin coating technique

    Science.gov (United States)

    Zeyada, H. M.; Youssif, M. I.; El-Ghamaz, N. A.; Aboderbala, M. E. O.

    2017-02-01

    Optical properties of pristine and UV irradiated Rose Bengal (RB) films have been investigated using transmittance and reflectance methods. The refractive index(n) and extinction coefficient (k) have been calculated from the absolute values of transmission and reflection spectrum. Single oscillator parameters and Drude model of free carrier absorption have been applied for analysis of the refractive index dispersion. Within the frame work of the band-to-band electron transitions theory; the fundamental absorption edge data were analyzed. Our results suggest that thickness of RB films has no effect on the absorption or the refractive indices in the investigated thicknesses range and within the experimental error. Structural transformation of films from amorphous to polycrystalline has been observed upon UV irradiation. Accordingly, the decreases of all of the absorption coefficient, the energy gap and the refractive index of RB films have been detected. Furthermore, the dependence of the optical functions on UV exposure times has been discussed based on the spectral distribution of the dielectric constant.

  5. Formation and dielectric properties of polyelectrolyte multilayers studied by a silicon-on-insulator based thin film resistor.

    Science.gov (United States)

    Neff, Petra A; Wunderlich, Bernhard K; Klitzing, Regine V; Bausch, Andreas R

    2007-03-27

    The formation of polyelectrolyte multilayers (PEMs) is investigated using a silicon-on-insulator based thin film resistor which is sensitive to variations of the surface potential. The buildup of the PEMs at the silicon oxide surface of the device can be observed in real time as defined potential shifts. The influence of polymer charge density is studied using the strong polyanion poly(styrene sulfonate), PSS, combined with the statistical copolymer poly(diallyl-dimethyl-ammoniumchloride-stat-N-methyl-N-vinylacetamide), P(DADMAC-stat-NMVA), at various degrees of charge (DC). The multilayer formation stops after a few deposition steps for a DC below 75%. We show that the threshold of surface charge compensation corresponds to the threshold of multilayer formation. However, no reversion of the preceding surface charge was observed. Screening of polyelectrolyte charges by mobile ions within the polymer film leads to a decrease of the potential shifts with the number of layers deposited. This decrease is much slower for PEMs consisting of P(DADMAC-stat-NMVA) and PSS as compared to PEMs consisting of poly(allylamine-hydrochloride), PAH, and PSS. From this, significant differences in the dielectric constants of the polyelectrolyte films and in the concentration of mobile ions within the films can be derived.

  6. Amorphous Strontium Titanate Film as Gate Dielectric for Higher Performance and Low Voltage Operation of Transparent and Flexible Organic Field Effect Transistor.

    Science.gov (United States)

    Yadav, Sarita; Ghosh, Subhasis

    2016-04-27

    We report that the pervoskite material, strontium titanate (STO) can be used as a gate dielectric layer of flexible and low voltage organic field effect transistor (OFET). The crystallinity, dielectric constant, and surface morphology of STO films can be controlled by the engineering of the growth condition. Under optimized growth condition, amorphous films of STO show a much better gate dielectric compared to other gate dielectrics used to date, with very small leakage current density for flexible and low voltage (transistors with amorphous STO gate dielectric show high mobility of 2 cm(2)/(V s), on/off ratio of 10(6), subthreshold swing of 0.3 V/dec and low interface trap density. Similarly excellent performance has been obtained in copper phthalocyanine (CuPc) based OFETs with on/off ratio ∼10(5) and carrier mobility ∼5.9 × 10(-2) cm(2)/(V s). Moreover, the operating voltage (∼5 V) has been reduced by more than one order of magnitude. It has been demonstrated that the low processing temperature of amorphous STO makes it the most suitable gate dielectric for flexible and transparent organic devices to operate under low voltage.

  7. Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode.

    Science.gov (United States)

    Wang, Yi; Wang, Hao; Ye, Cong; Zhang, Jun; Wang, Hanbin; Jiang, Yong

    2011-10-01

    The high-k dielectric HfO(2) thin films were deposited by pulsed laser deposition in nitrogen atmosphere. Rapid thermal annealing effect on film surface roughness, structure and electrical properties of HfO(2) film was investigated. The mechanism of interfacial reaction and the annealing atmosphere effect on the interfacial layer thickness were discussed. The sample annealed in nitrogen shows an amorphous dominated structure and the lowest leakage current density. Capacitors with high-k HfO(2) film as gate dielectric were fabricated, using Pt, Au, and Ti as the top gate electrode whereas Pt constitutes the bottom side electrode. At the gate injection case, the Pt- and Au-gated metal oxide semiconductor devices present a lower leakage current than that of the Ti-gated device, as well as similar leakage current conduction mechanism and interfacial properties at the metal/HfO(2) interface, because of their close work function and chemical properties.

  8. Significant enhancement of dielectric and conducting properties of electroactive polymer polyvinylidene fluoride films: An innovative use of Ferrum metallicum at different concentrations

    Directory of Open Access Journals (Sweden)

    B K Paul

    2016-01-01

    Result and Conclusion: Our result shows that the electrical properties such as dielectric constant, tangent loss, and electrical conductivity of these polymer films get significantly modified due to incorporation of this homoeopathic nanomedicine and the effect increases with the increase in concentration of the probe up to a critical value. These FeM-incorporated PVDF-HFP films will have potential applications as high-energy storage devices such as multilayered high-charge storage device.

  9. Theoretical study of optical dielectric response of ZnO nanostructure film deposited on silica substrate using Maxwell-Garnett effective medium theory

    Energy Technology Data Exchange (ETDEWEB)

    Bissa, Shivangi; Naruka, Preeti; Bishnoi, Nidhi [Dept. of Physics, Engineering College Bikaner-334004, Rajasthan, India shiwangi-bissa2005@yahoo.co.in (India)

    2016-05-06

    In the present study the dielectric optical response of various nanostructures of ZnO deposited on silica substrate has been studied using Maxwell-Garnett Effective Medium Theory. Using the volume filling factors for different nanostructures of ZnO the effective dielectric constant has been evaluated. The variation of this effective dielectric constant with the frequency of applied signal has been investigated. Moreover, the reflectance of the film, power absorption and variation of refractive index with frequency has been studied. The results obtained show that the quantum confinement effects in ZnO nano-structural films deposited on silica substrate give rise to distinct optical properties making it an ideal choice for high power THz generation.

  10. Magnetic, dielectric and magnetodielectric properties of PVDF-La0.7Sr0.3MnO3 polymer nanocomposite film

    Directory of Open Access Journals (Sweden)

    Ch. Thirmal

    2013-11-01

    Full Text Available We have investigated the structure, magnetic and dielectric properties of PVDF-La0.7Sr0.3MnO3 polymer nanocomposite thick film fabricated by dip coating technique along with the magnetodielectric effect. The structure and dielectric properties show the enhanced β phase in the composite compared to the PVDF film. The coupling between the ferroelectric and magnetic phases in the composite is revealed in the form of dielectric anomaly at the ferromagnetic Curie temperature. We observed 1.9% magnetodielectric effect at 300 K with the possibility of enhanced effect near the transition temperature. In addition, the analysis of the electric modulus indicates that the composite exhibits interfacial related relaxation and it follows Arrhenius Law. Our study suggests that the ac conductivity of the PVDF-La0.7Sr0.3MnO3 composite could be explained by correlated barrier hopping mechanism.

  11. Influence of Reactive Ion Etching on THz Transmission and Reflection Properties of NiCr Film Deposited on a Dielectric Substrate

    Directory of Open Access Journals (Sweden)

    Jun Gou

    2015-06-01

    Full Text Available Enhanced terahertz (THz absorption of NiCr film deposited on a dielectric substrate has been proven by applying a reactive ion etching (RIE treatment to the dielectric film. Nano – scale nickel – chromium (NiCr thin films are deposited on RIE treated silicon dioxide (SiO2 dielectric substrates to study the transmission and reflection characteristics. Experimental results suggest that both transmission and reflection of NiCr film are weakened by the RIE treatment. The most significant decrease of transmission is observed in 1 ~ 4 THz while that of reflection occurs in 1.7 ~ 2.5 THz band. The decrease of both transmission and reflection is more significant for NiCr film with higher thickness. The RIE treatment, which induces nano – scale surface structures and increases the effective surface area of NiCr film, enhances the absorption and weakens the transmission and reflection of THz radiation.DOI: http://dx.doi.org/10.5755/j01.ms.21.2.6131

  12. Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition

    Directory of Open Access Journals (Sweden)

    Hui Du

    2015-01-01

    Full Text Available Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTiO3 (BTO] thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition (PAD method using NiOx as the buffer layers. The NiOx buffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2 solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO/Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOx buffer layer. The conduction mechanisms of the BTO/Ni heterostructure have been discussed according to the J-V characteristic curves.

  13. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    Science.gov (United States)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ˜5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  14. Effect of post annealing on structural, optical and dielectric properties of MgTiO{sub 3} thin films deposited by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Santhosh Kumar, T.; Bhuyan, R.K. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Pamu, D., E-mail: pamu@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer MgTiO{sub 3} thin films were grown on quartz and Pt-Si substrates by RF sputtering and MIM capacitors were fabricated at different O{sub 2}%. Black-Right-Pointing-Pointer The sputtering target was prepared by mechanical alloying for the first time. Black-Right-Pointing-Pointer The effect of annealing and O{sub 2}% on structural, microstructural, optical and dielectric properties was studied systematically. Black-Right-Pointing-Pointer The increase in the refractive index and bandgap on annealing can be attributed to the improvement in packing density and crystallinity. Black-Right-Pointing-Pointer The improvement in the dielectric properties is attributed to the increase in crystallinity and reduction in oxygen vacancies. - Abstract: MgTiO{sub 3} (MTO) thin films have been deposited on to quartz and platinized silicon (Pt/TiO{sub 2}/SiO{sub 2}/Si) substrates by RF magnetron sputtering. The metal-MTO-metal (Ag-MTO-Pt/TiO{sub 2}/SiO{sub 2}/Si) thin film capacitors have been fabricated at different oxygen mixing percentage (OMP). The effects of OMP and post annealing on the structural, microstructural, optical and dielectric properties of MTO films were studied. The MTO target has been synthesized by mechanochemical synthesis method. The phase purity of the sputtering target was confirmed from X-ray diffraction pattern and refined to R3{sup Macron} space group with lattice parameters a = b = 5.0557(12) Angstrom-Sign , c = 13.9003(9) Angstrom-Sign . The chemical composition of the deposited films was confirmed from EDS spectra and all the films exhibited the composition of the sputtering target. The XRD patterns of the as-deposited films are amorphous and annealing at 700 Degree-Sign C for 1 h induced nanocrystallinity with the improved optical and dielectric properties. The annealed films exhibit refractive index in the range of 2.12-2.19 at 600 nm with an optical bandgap value in between 4.11 and 4.19 eV. The increase in the

  15. Synthesis of flat sticky hydrophobic carbon diamond-like films using atmospheric pressure Ar/CH4 dielectric barrier discharge

    Science.gov (United States)

    Rincón, R.; Hendaoui, A.; de Matos, J.; Chaker, M.

    2016-06-01

    An Ar/CH4 atmospheric pressure dielectric barrier discharge (AP-DBD) was used to synthesize sticky hydrophobic diamond-like carbon (DLC) films on glass surface. The film is formed with plasma treatment duration shorter than 30 s, and water contact angles larger than 90° together with contact angle hysteresis larger than 10° can be achieved. According to Fourier transform infrared spectroscopy and atomic force microscopy analysis, hydrocarbon functional groups are created on the glass substrate, producing coatings with low surface energy (˜35 mJ m-2) with no modification of the surface roughness. To infer the plasma processes leading to the formation of low energy DLC surfaces, optical emission spectroscopy was used. From the results, a direct relationship between the CH species present in the plasma and the carbon concentration in the hydrophobic layer was found, which suggests that the CH species are the precursors of DLC film growth. Additionally, the plasma gas temperature was measured to be below 350 K which highlights the suitability of using AP-DBD to treat thermo-sensitive surfaces.

  16. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.

    Science.gov (United States)

    Park, Jee Ho; Yoo, Young Bum; Lee, Keun Ho; Jang, Woo Soon; Oh, Jin Young; Chae, Soo Sang; Lee, Hyun Woo; Han, Sun Woong; Baik, Hong Koo

    2013-08-28

    We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a boron-doped peroxo-zirconium (ZrO2:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the In2O3 precursor. The formation of In2O3 and ZrO2:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS). Boron was selected as a dopant to make a denser ZrO2 film. The ZrO2:B film effectively blocked the leakage current at 200 °C with high breakdown strength. To evaluate the ZrO2:B film as a gate dielectric, we fabricated In2O3 TFTs on the ZrO2:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 °C. The resulting mobilities were 1.25 and 39.3 cm(2)/(V s), respectively. Finally, we realized a flexible In2O3 TFT with the ZrO2:B dielectric on a polyimide substrate at 200 °C, and it successfully operated a switching device with a mobility of 4.01 cm(2)/(V s). Our results suggest that aqueous solution-processed In2O3 TFTs on ZrO2:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

  17. Dielectric Investigation of Parylene D Thin Films: Relaxation and Conduction Mechanisms.

    Science.gov (United States)

    Mokni, M; Kahouli, A; Jomni, F; Garden, J-L; André, E; Sylvestre, A

    2015-09-03

    Parylene is a generic name indicating a family of polymers with the basic chemical structure of poly-p-xylylene. Parylene N and Parylene C are the most popular for applications. Curiously, Parylene D (poly( dichloro-p-xylylene), (C8H6Cl2)) was forgotten for applications. This report is the consequence of a later availability of a commercial dimer of Parylene D and also to the recent advent of fluorinated Parylenes allowing extending applications at higher temperatures. In our work, from a dielectric analysis, we present the potentialities of Parylene D for applications particularly interesting for integration in organic field-effect transistors. Dielectric and electrical properties, macromolecular structures, and dynamics interaction with electric field as a function of frequency and temperature are studied in 5.8 μm thick Parylene D grown by chemical vapor deposition. More exactly, the dielectric permittivity, the dissipation factor, the electrical conductivity, and the electric modulus of Parylene D were investigated in a wide temperature and frequency ranges from -140 to +350 °C and from 0.1 Hz to 1 MHz, respectively. According to the temperature dependence of the dielectric permittivity, Parylene D has two different dielectric responses. It is retained as a nonpolar material at very low temperature (like Parylene N) and as a polar material at high temperature (like parylene C). The dissipation factor shows the manifestation of two relaxations mechanisms: γ and β at very low and high temperatures, respectively. The γ relaxation is assigned to the local motions of the C-H end of the chains when the cryogenic temperature range is approached. A broad peak in tan δ is assigned to the β relaxation. It corresponds to rotational motion of some polar C-Cl groups. For temperature above 260 °C a mechanism of Maxwell-Wagner-Sillars polarization at the amorphous/crystalline interfaces was identified with two activation energies of Ea1 = 2.12 eV and Ea2 = 3.8 e

  18. Investigation of structure-dielectric property relationships in zirconium oxide, tantalum pentoxide, and oxide-polymer laminate films for high energy density capacitor applications

    Science.gov (United States)

    Sethi, Guneet

    Pulsed power applications involve transformation of electrical energy into high-peak power pulses through capacitors. There is an immediate need for fast-response capacitors with decreased volume, weight, and cost for pulsed power applications and power distribution systems. This research challenge is dominated by energy density. Energy density is directly related to dielectric properties such as dielectric polarization, conductivity and breakdown strength of the capacitor dielectric. This research work correlates processing and microstructure of single and multiple component dielectric films with their dielectric properties. The inorganic materials studied in this dissertation include zirconium oxide (ZrO2) and tantalum pentoxide (Ta 2O5) reactive sputtered films. Film crystallization & structure was studied as a function of sputtering growth variables such as sputtering power, sputtering pressure, source frequency, oxygen pressure, substrate temperature, substrate material, and post-deposition annealing temperature. Polycrystalline phase of ZrO2 and amorphous phase of Ta2O 5 were obtained for most sputtering growth variables. Although the amorphous films have lower permittivity (32 for amorphous & 51 for polycrystalline at 1 kHz), they also have lower AC and DC conductivities (3.4x10-8 S/m for amorphous & 12.2x10 -8 S/m for polycrystalline at 1 kHz), which result in high breakdown strength than polycrystalline films. Amorphous Ta2O5 films are found to be ideal for high-energy density capacitors with energy density of 14 J/cm3 because of their high permittivity, low leakage current density, and high dielectric breakdown strength. Oxide films were combined with different polymers (polyvinyldene flouride-triflouroethylene, polypropylene and polyethylene terephthalate) to produce two different kinds of laminate composites---oxide on polymer and polymer on oxide. Permittivity and conductivity differences in the polymer and oxide films result in an impedance contrast

  19. Surface-plasmon-polariton waves guided by the uniformly moving planar interface of a metal film and dielectric slab

    CERN Document Server

    Mackay, Tom G

    2010-01-01

    We explored the effects of relative motion on the excitation of surface-plasmon-polariton (SPP) waves guided by the planar interface of a metal film and a dielectric slab, both materials being isotropic and homogeneous. Electromagnetic phasors in moving and non-moving reference frames were related directly using the corresponding Lorentz transformations. Our numerical studies revealed that, in the case of a uniformly moving dielectric slab, the angle of incidence for SPP-wave excitation is highly sensitive to (i) the ratio $\\beta$ of the speed of motion to speed of light in free space and (ii) the direction of motion. When the direction of motion is parallel to the plane of incidence, the SPP wave is excited by $p$-polarized (but not $s$-polarized) incident plane waves for low and moderate values of $\\beta$, while at higher values of $\\beta$ the total reflection regime breaks down. When the direction of motion is perpendicular to the plane of incidence, the SPP wave is excited by $p$-polarized incident plane ...

  20. Mechanical and dielectric characterization of lead zirconate titanate(PZT)/polyurethane(PU) thin film composite for energy harvesting

    Science.gov (United States)

    Aboubakr, S.; Rguiti, M.; Hajjaji, A.; Eddiai, A.; Courtois, C.; d'Astorg, S.

    2014-04-01

    The Lead Zirconate titanate (PZT) ceramic is known by its piezoelectric feature, but also by its stiffness, the use of a composite based on a polyurethane (PU) matrix charged by a piezoelectric material, enable to generate a large deformation of the material, therefore harvesting more energy. This new material will provide a competitive alternative and low cost manufacturing technology of autonomous systems (smart clothes, car seat, boat sail, flag ...). A thin film of the PZT/PU composite was prepared using up to 80 vol. % of ceramic. Due to the dielectric nature of the PZT, inclusions of this one in a PU matrix raises the permittivity of the composite, on other hand this latter seems to decline at high frequencies.

  1. Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Dielectric and Structural Properties of SrTiO_3 Thin Films Grown by Laser Molecular Beam Epitaxy[1]Hao J H,Gao J,Wang Z,et al.Interface structure and phase of epitaxial SrTi O3(110)thin fil ms grown directly on silicon[J].Appl Phys Lett,2005,87:131908. [2]Hao J H,Gao J,Wang HK.SrTi O3(110)thin fil ms grown directly on different oriented silicon substrates[J].Appl Phys A,2005,81:1233. [3]Aki mov I A,Sirenko A A,Clark A M,et al.Electric-field-induced soft-mode hardening in SrTi O3fil ms[J].Phys Rev Lett...

  2. Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics

    CERN Document Server

    Dmitriev, P A; Milichko, V A; Mukhin, I S; Gudovskikh, A S; Sitnikova, A A; Samusev, A K; Krasnok, A E; Belov, P A

    2015-01-01

    The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonances, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high concentration of defects in the nanoresonators diminishes their resonant properties, which are crucially dependent on their internal losses. Therefore, it seems to be inevitable to use initially crystalline materials for fabrication of the nanoresonators. Here, we show that the fabrication of crystalline (low-loss) resonant silicon nanoparticles by femtosecond laser ablation of amorphous (high-loss) silicon thin films is possible. We apply two conceptually different approaches: recently proposed laser-induced transfer and a novel laser writing technique for large-scale fabrication of the crystalline nanoparticles. The crystallinity of the fabricated nanoparticles is proven by Raman spectroscopy and electron transmission microscopy, whereas optical resonant properties of the nanopart...

  3. Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics

    Science.gov (United States)

    Dmitriev, P. A.; Makarov, S. V.; Milichko, V. A.; Mukhin, I. S.; Gudovskikh, A. S.; Sitnikova, A. A.; Samusev, A. K.; Krasnok, A. E.; Belov, P. A.

    2016-02-01

    The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonance, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high concentration of defects in the nanoresonators diminishes their resonant properties, which are crucially dependent on their internal losses. Therefore, it seems to be inevitable to use initially crystalline materials for fabrication of the nanoresonators. Here, we show that the fabrication of crystalline (low-loss) resonant silicon nanoparticles by femtosecond laser ablation of amorphous (high-loss) silicon thin films is possible. We apply two conceptually different approaches: recently proposed laser-induced transfer and a novel laser writing technique for large-scale fabrication of the crystalline nanoparticles. The crystallinity of the fabricated nanoparticles is proven by Raman spectroscopy and electron transmission microscopy, whereas optical resonant properties of the nanoparticles are studied using dark-field optical spectroscopy and full-wave electromagnetic simulations.

  4. Electromigration study of Al thin films deposited on low dielectric polyimide and SiO sub 2 ILD

    CERN Document Server

    Eun, B S

    1999-01-01

    The electromigration characteristics of Al-1 %Si-0.5 %Cu films deposited onto three kinds of polyimides (PI-2734, PI-2611, and BG-2480) and onto SiO sub 2 prepared by low pressure chemical vapor deposition have been investigated. The Al lines deposited onto SiO sub 2 showed about a one-order higher electromigration lifetime than those deposited onto polyimide interlayer dielectrics (ILDs). The electromigration characteristics degraded as the polyimide thickness increased. Joule heat which accumulated at the Al/polyimide interface was the main cause of the decrease in the electromigration reliability because the thermal conductivity of the polyimides was about one order lower than that of SiO sub 2.

  5. Preparation of a new gate dielectric material HfTiON film

    Institute of Scientific and Technical Information of China (English)

    YU Guo-yi; ZOU Xue-cheng; CHEN Wei-bing

    2007-01-01

    A new gate dielectric material HfTiON is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient,followed by annealing in N2 at 600℃ and 800℃ respectively for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared for different anneal conditions. The results indicate that the sample annealed at 800 ℃ exhibits lower interface-state and oxide-charge densities, and better device reliability. This is attributed to the fact that the rapid thermal annealing at the higher temperature of 800 ℃ can effectively remove the damage-induced precipitation, forming a hardened dielectric/Si interface with high reliability.

  6. The pyroelectric constant and dielectric coefficient measurement of pyroelectric thin films

    CERN Document Server

    Altintas, E

    1998-01-01

    Pyroelectric coefficient measurements were made in various temperature for poled and unpoled form of PVDF which is pyroelectric material. For these experiments the quasi-static techniques was used. PVDF samples were poled in various electric strengths and relation between poling field strength and pyroelectric coefficient was investigated. It was observed that as poling field strength was increased, the pyroelectric coefficient increased as well. The other study was the effect of poling temperature on pyroelectricity. The best result was obtained when PVDF sample was poled at 340 K. This temperature value is about the Curie temperature of PVDF is and given in the literature. For poled and unpoled samples, there was an increase in pyroelectric coefficient with the increase of measurement temperature up to T sub c. The dielectric permittivity and dielectric loss measurement of PVDF which is a semi-crystalline polymer was taken in the 125-375 K temperature and 100-20 khz frequency interval. The measurements show...

  7. Controlling E. coli adhesion on high-k dielectric bioceramics films using poly(amino acid) multilayers.

    Science.gov (United States)

    Lawrence, Neil J; Wells-Kingsbury, Jamie M; Ihrig, Marcella M; Fangman, Teresa E; Namavar, Fereydoon; Cheung, Chin Li

    2012-03-06

    The influence of high-k dielectric bioceramics with poly(amino acid) multilayer coatings on the adhesion behavior of Escherichia coli (E. coli) was studied by evaluating the density of bacteria coverage on the surfaces of these materials. A biofilm forming K-12 strain (PHL628), a wild-type strain (JM109), and an engineered strain (XL1-Blue) of E. coli were examined for their adherence to zirconium oxide (ZrO(2)) and tantalum oxide (Ta(2)O(5)) surfaces functionalized with single and multiple layers of poly(amino acid) polyelectrolytes made by the layer-by-layer (LBL) deposition. Two poly(amino acids), poly(l-arginine) (PARG) and poly(l-aspartic acid) (PASP), were chosen for the functionalization schemes. All three strains were found to grow and preferentially adhere to bare bioceramic film surfaces over bare glass slides. The bioceramic and glass surfaces functionalized with positively charged poly(amino acid) top layers were observed to enhance the adhesion of these bacteria by up to 4-fold in terms of bacteria surface coverage. Minimal bacteria coverage was detected on surfaces functionalized with negatively charged poly(amino acid) top layers. The effect of different poly(amino acid) coatings to promote or minimize bacterial adhesion was observed to be drastically enhanced with the bioceramic substrates than with glass. Such observed enhancements were postulated to be attributed to the formation of higher density of poly(amino acids) coatings enabled by the high dielectric strength (k) of these bioceramics. The multilayer poly(amino acid) functionalization scheme was successfully applied to utilize this finding for micropatterning E. coli on bioceramic thin films.

  8. Novel thin film polymer foaming technique for low and ultra low-k dielectrics

    NARCIS (Netherlands)

    Krause, B.; Koops, G.H.; Vegt, van der N.F.A.; Wessling, M.; Wubbenhorst, M.; Turnhout, van J.

    2001-01-01

    The results presented show a novel route for the preparation of thin ultra-low-k polymer films based on commercial and "non-exotic" (non-expensive) polyimide by a foaming technique. Dependent on the glass transition temperature of the polyimide mechanically and thermally stable (> 300 °C) films havi

  9. Black metal thin films by deposition on dielectric antireflective moth-eye nanostructures

    DEFF Research Database (Denmark)

    Christiansen, Alexander Bruun; Caringal, Gideon Peter; Clausen, Jeppe Sandvik

    2015-01-01

    frequency in the range 5-7 mu m(-1). A reflectance in the visible spectrum as low as 6%, and an absorbance of 90% was observed for an Al film of 100 nm thickness. Corresponding experiments on a planar film yielded 80% reflectance and 20% absorbance. The observed absorbance enhancement is attributed...

  10. Electrostatically assisted fabrication of silver-dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing.

    Science.gov (United States)

    Li, Xue; Niitsoo, Olivia; Couzis, Alexander

    2016-03-01

    An electrostatically-assisted strategy for fabrication of thin film composite capacitors with controllable dielectric constant (k) has been developed. The capacitor is composed of metal-dielectric core/shell nanoparticle (silver/silica, Ag@SiO2) multilayer films, and a backfilling polymer. Compared with the simple metal particle-polymer mixtures where the metal nanoparticles (NP) are randomly dispersed in the polymer matrix, the metal volume fraction in our capacitor was significantly increased, owing to the densely packed NP multilayers formed by the electrostatically assisted assembly process. Moreover, the insulating layer of silica shell provides a potential barrier that reduces the tunneling current between neighboring Ag cores, endowing the core/shell nanocomposites with a stable and relatively high dielectric constant (k) and low dielectric loss (D). Our work also shows that the thickness of the SiO2 shell plays a dominant role in controlling the dielectric properties of the nanocomposites. Control over metal NP separation distance was realized not only by variation the shell thickness of the core/shell NPs but also by introducing a high k nanoparticle, barium strontium titanate (BST) of relatively smaller size (∼8nm) compared to 80-160nm of the core/shell Ag@SiO2 NPs. The BST assemble between the Ag@SiO2 and fill the void space between the closely packed core/shell NPs leading to significant enhancement of the dielectric constant. This electrostatically assisted assembly method is promising for generating multilayer films of a large variety of NPs over large areas at low cost.

  11. Titanium dioxide thin films deposited by pulsed laser deposition and integration in radio frequency devices: Study of structure, optical and dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Orlianges, Jean-Christophe, E-mail: jean-christophe.orlianges@unilim.fr [SPCTS, UMR 7315, Universite de Limoges/CNRS, 12 rue Atlantis, 87068 Limoges Cedex (France); Crunteanu, Aurelian; Pothier, Arnaud [XLIM, UMR 7252, Universite de Limoges/CNRS, 123, avenue Albert Thomas, 87060 Limoges Cedex (France); Merle-Mejean, Therese [SPCTS, UMR 7315, Universite de Limoges/CNRS, 12 rue Atlantis, 87068 Limoges Cedex (France); Blondy, Pierre [XLIM, UMR 7252, Universite de Limoges/CNRS, 123, avenue Albert Thomas, 87060 Limoges Cedex (France); Champeaux, Corinne [SPCTS, UMR 7315, Universite de Limoges/CNRS, 12 rue Atlantis, 87068 Limoges Cedex (France)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer We have grown TiO{sub 2} thin films by PLD on c-sapphire substrate with pre-patterned out-plane capacitor structures. Black-Right-Pointing-Pointer Raman and XRD analyses indicate an evolution from 'amorphous' to anatase and rutile phase. Black-Right-Pointing-Pointer Thin films optical properties are investigated using spectroscopic ellipsometry and transmission measurements. Black-Right-Pointing-Pointer Permittivity measurements reveal high dielectric constant {epsilon}{sub r} = 120 of 600 Degree-Sign C-grown TiO{sub 2} thin films. - Abstract: Titanium dioxide presents a wide range of technological application possibilities due to its dielectric, electrochemical, photocatalytic and optical properties. The three TiO{sub 2} allotropic forms: anatase, rutile and brookite are also interesting, since they exhibit different properties, stabilities and growth modes. For instance, rutile has a high dielectric permittivity, of particular interest for the integration as dielectric in components such as microelectromechanical systems (MEMS) for radio frequency (RF) devices. In this study, titanium dioxide thin films are deposited by pulsed laser deposition. Characterizations by Raman spectroscopy and X-ray diffraction show the evolution of the structural properties. Thin films optical properties are investigated using spectroscopic ellipsometry and transmission measurements from UV to IR range. Co-planar waveguide (CPW) devices are fabricated based on these films. Their performances are measured in the RF domain and compared to simulation, leading to relative permittivity values in the range 30-120, showing the potentialities of the deposited material for capacitive switches applications.

  12. Piezoelectric and Dielectric Properties of Multilayered BaTiO3/(Ba,Ca)TiO3/CaTiO3 Thin Films.

    Science.gov (United States)

    Zhu, Xiao Na; Gao, Ting Ting; Xu, Xing; Liang, Wei Zheng; Lin, Yuan; Chen, Chonglin; Chen, Xiang Ming

    2016-08-31

    Highly oriented multilayered BaTiO3-(Ba,Ca)TiO3-CaTiO3 thin films were fabricated on Nb-doped (001) SrTiO3 (Nb:STO) substrates by pulsed laser deposition. The configurations of multilayered BaTiO3-(Ba,Ca)TiO3-CaTiO3 thin films are designed with the thickness ratio of 1:1:1 and 2:1:1 and total thickness ∼300 nm. Microstructural characterization by X-ray diffraction indicates that the as-deposited thin films are highly c-axis oriented and large in-plane strain is determined in BaTiO3 and CaTiO3 layers. Piezoresponse force microscopy (PFM) studies reveal an intense in-plane polarization component, whereas the out-of-plane shows inferior phase contrast. The optimized combination is found to be the BaTiO3-(Ba0.85Ca0.15)TiO3-CaTiO3 structure with combination ratio 2:1:1, which displays the largest domain switching amplitude under DC electric field, the largest room-temperature dielectric constant ∼646, a small dielectric loss of 0.03, and the largest dielectric tunability of ∼50% at 400 kV/cm. These results suggest that the enhanced dielectric and tunability performance are greatly associated with the large in-plane polarization component and domain switching.

  13. Effect of annealing temperature on structural and electrical properties of high-κ YbTixOy gate dielectrics for InGaZnO thin film transistors

    Science.gov (United States)

    Pan, Tung-Ming; Chen, Fa-Hsyang; Hung, Meng-Ning

    2015-01-01

    This paper describes the effect of annealing temperature on the structural properties and electrical characteristics of high-κ YbTixOy gate dielectrics for indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). X-ray diffraction, x-ray photoelectron spectroscopy and atomic force microscopy were used to study the structural, chemical and morphological features, respectively, of these dielectric films annealed at 200, 300 and 400 °C. The YbTixOy IGZO TFT that had been annealed at 400 °C exhibited better electrical characteristics, such as a small threshold voltage of 0.53 V, a large field-effect mobility of 19.1 cm2 V-1 s-1, a high Ion/Ioff ratio of 2.8 × 107, and a low subthreshold swing of 176 mV dec.-1, relative to those of the systems that had been subjected to other annealing conditions. This result suggests that YbTixOy dielectric possesses a higher dielectric constant as well as lower oxygen vacancies (or defects) in the film. In addition, the instability of YbTixOy IGZO TFT was studied under positive gate-bias stress and negative gate-bias stress conditions.

  14. Chemical and Electronic Structure Studies of Refractory and Dielectric Thin Films.

    Science.gov (United States)

    Corneille, Jason Stephen

    This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. Metallic magnesium films were grown and characterized as a preliminary study to the synthesis of magnesium oxide. Magnesium oxide (MgO(100)) was synthesized on Mo(100) by evaporating magnesium at a rate of one monolayer per minute in an oxygen background pressure of 1 times 10 ^{-6} Torr at room temperature. The resulting film was found to exhibit spectroscopic characteristics quite similar to those observed for bulk MgO. The acid/base characteristics of the films were studied using carbon monoxide, water and methanol as probe molecules. The film was found to exhibit essentially the same chemical properties as found in analogous powdered catalysts. Silicon dioxide was synthesized by evaporating silicon onto Mo(100) in an oxygen ambient. It is shown that the silicon oxide prepared at room temperature with a silicon deposition rate of {~ }{1.2}A/min and an oxygen pressure of 2 times 10^{ -8} Torr, consisted of predominantly silicon dioxide with a small fraction of suboxides. Annealing to

  15. Dielectric Characteristics of Ba0.65Sr0.35TiO3 Thin Films by Sol-Gel Method

    Institute of Scientific and Technical Information of China (English)

    LIU Gui-jun; HU Wen-cheng; SHEN Yi-dong

    2007-01-01

    Ferroelectric Ba0.6sSr0.3sTiO3 (BST) thin films on the Pt/Ti/SiO2/Si substrate have been successfully prepared by sol-gel. Such films have approximately 300 nm thicknesses with a remnant polarization of about 2.95 μC/cm2 and a coercive field of about 21.5 kV/cm. The investigations of X-ray diffraction and atomic force microscopy show that the BST films annealed at 650 ℃ exhibit a tetragonal structure and that the films dominantly consist of large column or grains of about 89 nm in diameter. The curves of the temperature dependence of dielectric coefficient in different frequencies display the curie transition at the temperature around 23 ℃.The dielectric loss tangent of BST thin films at 100 kHz is less than 0.04. As a result, the BST thin films are more applicable for fabrication of infrared detector compared with the BST thin films reported previously.

  16. Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric

    OpenAIRE

    Liu, YR; Deng, LF; Yao, RH; Lai, PT

    2010-01-01

    The effects of hafnium oxide $(hbox{HfO}-{2})$ gate dielectric annealing treatment in oxygen $(hbox{O}-{2})$ and ammonia $(hbox{NH}-{3})$ ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with $hbox{HfO}-{2}$ gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of $-$0.5 V and an operating volt...

  17. Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

    Science.gov (United States)

    Su, Yaorong

    Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces

  18. Magnetic and dielectric properties of YbMnO3 perovskite thin films

    Science.gov (United States)

    Rubi, D.; Venkatesan, Sriram; Kooi, B. J.; de Hosson, J. Th. M.; Palstra, T. T. M.; Noheda, B.

    2008-07-01

    Metastable manganite perovskites displaying the antiferromagnetic so-called E phase are predicted to be multiferroic. Due to the need of high pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3 . Here we report on the growth and characterization of YbMnO3 perovskite thin films grown under epitaxial strain. Highly oriented thin films, with thickness down to 30 nm, can be obtained showing magnetodielectric coupling and magnetic responses as those expected for the E phase. We observe that the magnetic properties depart from the bulk behavior only in the case of ultrathin films (d<30nm) , which display a glassy magnetic behavior. We show that strain effects alone cannot account for this difference and that the film morphology plays, instead, a crucial role.

  19. Femtosecond Laser Desorption of Thin Polymer Films from a Dielectric Surface

    Directory of Open Access Journals (Sweden)

    Mercadier L.

    2013-11-01

    Full Text Available We desorb polymer films from fused silica with a femtosecond laser and characterize the results by atomic force microscopy. Our study as a function of beam geometry and energy reveals two ways of achieving spatially controlled nanodesorption.

  20. Enhanced Dielectric Properties of [Pb(Mg1/3Nb2/3)O3]0.9-PbTiO3]0.1 Thin Films Grown on BaPbO3 Perovskite Electrode

    Science.gov (United States)

    Ho, Sut Kam; Hau, Fei Fei; Wong, Kin Hung

    2004-11-01

    Polycrystalline and epitaxial [Pb(Mg1/3Nb2/3)O3]0.9-[PbTiO3]0.1 (PMN-PT) thin films were prepared by pulsed laser deposition on BaPbO3 (BPO) and La0.7Sr0.3MnO3 (LSMO) oxide electrodes. In comparison, the epitaxial films show higher dielectric constant and the polycrystalline films exhibit lower dielectric loss and smaller leakage current. It is also found that the use of lead based BPO electrodes helps to raise the dielectric constant of the PMN-PT layer by 30%, and to reduce the dielectric leakage by as much as three orders of magnitude. Our results have clearly demonstrated the superiority of using lead based electrodes for growing lead based dielectrics.

  1. Effect of DC Bias on Dielectric Response in Relaxor Ferroelectric Terpolymer Films

    Science.gov (United States)

    Tian, L.; Sun, J.; Wang, J. L.; Li, Y. P.

    2017-06-01

    The permittivity as a function of temperature and dc bias in the poly(vinylindene fluoride-trifluorethylene-chlorofluoroethylene) [P(VDF-TrFE-CFE)] terpolymer was measured and analyzed using both the Vogel-Fulcher and universal Curie-Weiss law. The decreased permittivity with increasing dc bias has been observed. The lower permittivity in dc bias is due to the suppressed diffusion of phase transition rather than the nonlinear dielectric contribution. Furthermore, the suppression of phase diffusion can be explained by the molecular conformation conversion in dc bias.

  2. Structural, optical and microwave dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

    Science.gov (United States)

    Santhosh Kumar, T.; Gogoi, Pallabi; Bhasaiah, S.; Raju, K. C. James; Pamu, D.

    2015-05-01

    We report the structural, optical, and microwave dielectric characteristics of (Mg0.95Co0.05)TiO3 (MCT) thin films deposited onto amorphous SiO2 (a-SiO2) substrates by RF magnetron sputtering for the first time. The role of the oxygen mixing percentage (OMP) on the growth, morphology, optical, and microwave dielectric properties of MCT thin films has been investigated. The as-deposited MCT films were x-ray amorphous and crystallined after annealing at 700 °C for 1 h in air. A preferred orientation of grains along the (110) direction has been observed with increasing OMP. Such a textured growth is explained by calculating the orientation factors from the Lotgering model. The dispersion in a refractive index with wavelength has been explained using a single oscillator dispersion model. Both the refractive index and bandgap of the films increases on annealing. The annealed films exhibit refractive indices in the range of 1.88-2.08 at 600 nm with an optical bandgap value between 3.95-4.16 eV. The increase in the refractive index is attributed to the improvement in packing density and crystallinity, and decrease in the porosity ratio, whereas the increase in bandgap is due to the decrease in intermediary energy levels within the optical bandgap. (Mg0.95Co0.05)TiO3 thin films exhibited a progressive increase in the dielectric properties with OMP and a maximum dielectric constant of ɛr = 17.3 and low loss (tanδ ˜ 1.1 × 10-3) at a spot frequency of 10 GHz for the films deposited at 75% OMP, beyond which they decreased. The improvement in dielectric properties with an increase in OMP has been correlated to the preferred orientation growth, reduction in oxygen vacancies, and strain. The prepared MCT thin films are suitable candidates for anti-reflection coatings and complementary metal-oxide semiconductor (CMOS) applications.

  3. Dielectric thin-films by ion-beam sputtering deposition for III-V based infrared optoelectronic imaging

    Science.gov (United States)

    Nguyen, Jean

    The growing technological industry is demanding the development of powerful and smaller devices. Dielectric thin-films can play an important role to help push towards achieving these goals. However, their advantage of high-quality material and low material costs compared to bulk can only be achieved with consideration of the technique, conditions, and parameters. The sensitivity makes every step in the process extremely important, beginning from substrate preparation to the first initial layers of growth and ending with the testing/modeling of the devices. Further, not all applications want bulk-like properties, so the ability to adjust and fine tune the material characteristics opens up a wide range of opportunities with the advancements and can drive the power of the devices to an ultimate level. This work provides the motivation, theoretical basis, and experimental results for performance enhancement of optoelectronic devices through the use of high-quality dielectric thin-films by ion-beam sputtering deposition (IBSD). The advantages and disadvantages to this technique are demonstrated and compared to others. The optimization processes, relationships, and motivation of using seven different thin-film materials have been detailed and provided. Using IBSD, the performance improvements were demonstrated on infrared lasers and detectors. For lasers, a 170% increase in maximum output power was achieved using near-0% percent anti-reflection coatings (AR) and near-100% high-reflection (HR) coatings. Following, wide tunability was achieved by using the structures in an external cavity laser system, showing nearly a three-fold improvement in tuning range. Also, structurally robust lasers were achieved with a custom-tailored HR structure designed for damage resistance to high output power density operation, showing over 14W of peak output power for MOCVD lasers. For infrared photodetectors, over a 4 orders of magnitude decrease in current density and zero-bias resistance

  4. Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

    Science.gov (United States)

    Jiwei, Zhai; Cheung, M. H.; Xu, Zheng Kui; Li, Xin; Chen, Haydn; Colla, Eugene V.; Wu, T. B.

    2002-11-01

    Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700 degC for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 muC/cm2, which is equal to that observed in bulk samples.

  5. O 2-annealing effects on dielectric properties of Sr 2AlTaO 6/YBa 2Cu 3O y films

    Science.gov (United States)

    Takahashi, Yoshihiro; Zama, Hideaki; Morishita, Tadataka; Tanabe, Keiichi

    2001-08-01

    Approximately 160-nm-thick Sr 2AlTaO 6 (SAT) thin films were prepared by metalorganic chemical vapor deposition on liquid phase epitaxy-grown 60-μm-thick YBa 2Cu 3O 7- δ (YBCO) films. The effects of oxygen postannealing on the dielectric properties of SAT and the superconducting properties of YBCO were investigated. The c-axis length of YBCO decreased from 11.82 to 11.70 Å and its Tc of 90 K was observed after oxidation for 250 h at 500°C in 1 atm O 2 atmosphere, indicating that YBCO is almost fully oxygenated through SAT. Postannealed samples showed reasonably low dielectric constants for SAT of approximately 24 and low conductance of 10 -8 S at 10 5 Hz which corresponds to a loss tangent of 5×10 -4. On the other hand, the SAT films without postannealing exhibited an order of magnitude larger conductance. The improved dielectric properties of the annealed samples are probably attributed to compensation of oxygen defects at the SAT grain boundaries as well as oxidation of the lower YBCO film.

  6. Effect of Change in Ba Concentration on Crystallintiy and Dielectric Constant of the Sol-Gel Deposited Barium Strontium Titante (BST Films on n-Type Si Wafer

    Directory of Open Access Journals (Sweden)

    C.C. Tripathi

    2011-01-01

    Full Text Available Thin (Bax, Sr1 – xTiO3 (BST films of different chemical compositions (x = 0.3 0.5 & 0.7 were prepared by the sol-gel process using barium acetate, strontium acetate and titanium isopropoxide as metal alkoxides. The titanium isopropoxide was dissolved in acetyl acetone (chelating agent and mixing the resultant solution with barium and strontium acetate dissolved in acetic acid solution. The alkoxide group in titanium isopropoxide was replaced by acetate ligand and after hydrolysis and condensation process a complex solution was obtained. This solution was deposited on n-type (111 Si wafers by spin coating and after drying at 350 ºC the samples were annealed at 700 ºC in oxygen ambient. The precise control of composition of different species is important for producing good quality films having high crystallinity and dielectric constant. The crystallinity of the film was found to increase with the increase of Ba concentration as found from X-ray diffraction. The calculated value of dielectric constant from CV measurements revealed that the film of (Ba0.7, Sr0.3 TiO3 had the maximum dielectric constant as 463 and the surface was examined by SEM.

  7. Dielectric relaxation and alternating current conductivity of lanthanum, gadolinium, and erbium-polyvinyl alcohol doped films.

    Science.gov (United States)

    Hanafy, Taha A

    2012-08-01

    Fourier transform infrared (FTIR) spectrum dielectric constant, ε', loss tangent, tan(δ), electric modulus, M*, and ac conductivity, σ(ac), of pure polyvinyl alcohol (PVA) as well as La-, Gd-, and Er-PVA doped samples have been carried out. The dielectric properties have been studied in the temperature and frequency ranges; 300-450 K and 1 kHz-4 MHz, respectively. FTIR measurements reveal that La(3+), Gd(3+), and Er(3+) ions form complex configuration within PVA structure. Two relaxation processes, namely, ρ and α were observed in pure PVA sample. The first process is due to the interfacial or Maxwell-Wagner-Sillers polarization. The second one is related to the micro-Brownian motion of the main chains. For doped PVA samples, α-relaxation process splits into α(a) and α(c). This splitting is due to the segmental motion in the amorphous (α(a)) and crystalline (α(c)) phases of PVA matrix. Electric modulus analysis was discussed to understand the mechanism of the electrical transport process. The behavior of ac conductivity for all PVA samples indicates that the conduction mechanism is correlated barrier hopping.

  8. Stiff, strong, yet tough free-standing dielectric films of graphene nanosheets-polyurethane nanocomposites with very high dielectric constant and loss

    Science.gov (United States)

    Jan, Rahim; Habib, Amir; Gul, Iftikhar Hussain

    2016-01-01

    In this study, graphene nanosheets (GNS) prepared through a liquid exfoliation technique are dispersed in thermoplastic polyurethane (TPU) at a volume fraction (Vf) of up to 0.19. Then, the electrical and mechanical properties of the obtained composites are characterized. The dielectric spectroscopy shows an excessive variation in dielectric constant (1.1 to 3.53 × 107) and dielectric tangent loss (0.03 to 2515) with varying Vf over the frequency range of 25 kHz to 5 MHz. A considerable enhancement in electrical conductivity (DC) is found, from 3.87 × 10-10 S/m (base polymer) to 53.5 S/m for the 0.19 Vf GNS-TPU nanocomposite. The GNS-TPU composites are mechanically robust, with a considerable increase in stiffness (˜4-fold) and strength (almost twice), maintaining its ductility up to 0.09 Vf GNS. The high dielectric constant at lower frequencies is attributed to the well-established Maxwell-Wagner polarization effect, whereas the high dielectric tangent loss is due to leakage currents as a physical conducting network is formed at high filler loadings. The layered structure, high aspect ratio, and improved dispersion of GNS are the main reasons for the improvement in both the dielectric characteristics and the mechanical properties of the host polymer. [Figure not available: see fulltext.

  9. Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films

    Science.gov (United States)

    Matsubara, R.; Sakai, Y.; Nomura, T.; Sakai, M.; Kudo, K.; Majima, Y.; Knipp, D.; Nakamura, M.

    2015-11-01

    For the better performance of organic thin-film transistors (TFTs), gate-insulator surface treatments are often applied. However, the origin of mobility increase has not been well understood because mobility-limiting factors have not been compared quantitatively. In this work, we clarify the influence of gate-insulator surface treatments in pentacene thin-film transistors on the limiting factors of mobility, i.e., size of crystal-growth domain, crystallite size, HOMO-band-edge fluctuation, and carrier transport barrier at domain boundary. We quantitatively investigated these factors for pentacene TFTs with bare, hexamethyldisilazane-treated, and polyimide-coated SiO2 layers as gate dielectrics. By applying these surface treatments, size of crystal-growth domain increases but both crystallite size and HOMO-band-edge fluctuation remain unchanged. Analyzing the experimental results, we also show that the barrier height at the boundary between crystal-growth domains is not sensitive to the treatments. The results imply that the essential increase in mobility by these surface treatments is only due to the increase in size of crystal-growth domain or the decrease in the number of energy barriers at domain boundaries in the TFT channel.

  10. Improved dielectric properties of CaCu3Ti4O12 films with a CaTiO3 interlayer on Pt/TiO2/SiO2/Si substrates prepared by pulsed laser deposition

    Science.gov (United States)

    Lee, Sung-Yun; Kim, Hui Eun; Jo, William; Kim, Young-Hwan; Yoo, Sang-Im

    2015-11-01

    We report the greatly improved dielectric properties of CaCu3Ti4O12 (CCTO) films with a 60 nm-thick CaTiO3 (CTO) interlayer on Pt/TiO2/SiO2/Si substrates. Both CCTO films and CTO interlayers were prepared by pulsed laser deposition (PLD). With increasing the thickness of CCTO from 200 nm to 1.3 μm, the dielectric constants ( ɛ r ) at 10 kHz in both CCTO single-layered and CCTO/CTO double-layered films increased from ˜260 to ˜6000 and from ˜630 to ˜3700, respectively. Compared with CCTO single-layered films, CCTO/CTO double-layered films irrespective of CCTO film thickness exhibited a remarkable decrease in their dielectric losses ( tanδ) (Poole-Frenkel conduction model. [Figure not available: see fulltext.

  11. Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

    Science.gov (United States)

    Li, Min; Lan, Linfeng; Xu, Miao; Wang, Lei; Xu, Hua; Luo, Dongxiang; Zou, Jianhua; Tao, Hong; Yao, Rihui; Peng, Junbiao

    2011-11-01

    Thin-film transistors (TFTs) using indium zinc oxide as the active layer and anodic aluminium oxide (Al2O3) as the gate dielectric layer were fabricated. The device showed an electron mobility of as high as 10.1 cm2 V-1 s-1, an on/off current ratio of as high as ~108, and a turn-on voltage (Von) of only -0.5 V. Furthermore, this kind of TFTs was very stable under positive bias illumination stress. However, when the device experienced negative bias illumination stress, the threshold voltage shifted to the positive direction. It was found that the instability under negative bias illumination stress (NBIS) was due to the electrons from the Al gate trapping into the Al2O3 dielectric when exposed to the illuminated light. Using a stacked structure of Al2O3/SiO2 dielectrics, the device became more stable under NBIS.

  12. Dielectric properties and structural dynamics of melt compounded hot-pressed poly(ethylene oxide)–organophilic montmorillonite clay nanocomposite films

    Indian Academy of Sciences (India)

    R J Sengwa; Shobhna Choudhary

    2012-02-01

    The dielectric properties of melt compounded hot-pressed nanocomposite films consisting of a poly(ethylene oxide) (PEO) and organophilic montmorillonite (OMMT) clay surface modified with trimethyl stearyl ammonium as filler with increasing amount up to 20 wt.% OMMT were investigated in a frequency range of 20 Hz–1 MHz at 30 °C. The predominance of OMMT exfoliated structures in PEO–OMMT nanocomposites were recognized by a decrease of the real part of complex dielectric function. OMMT concentration dependent dielectric and electric modulus relaxation times have revealed that the interactions compatibility between PEO molecules and dispersed OMMT nano-platelets in PEO matrix governs the PEO segmental dynamics. A.C. conductivity of these nanocomposites increases by two orders of magnitude in the experimental frequency range.

  13. Characterization upon electrical hysteresis and thermal diffusion of TiAl3O x dielectric film

    Directory of Open Access Journals (Sweden)

    Liu Zhiguo

    2011-01-01

    Full Text Available Abstract In this paper, we have investigated the electrical properties of TiAl3O x film as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl3O x /Si interfacial region in detail. The TiAl3O x films show obvious electrical hysteresis by the capacitance-voltage measurements after post-annealing treatment. By virtue of the diffusion models composed of TiAl3O x film and silicon, the diffusion coefficient and the diffusion activation energy of the Ti and Al atoms are extracted. It is valuable to further investigate the pseudobinary oxide system in practice. PACS: 77.55.-g; 81.15.Fg; 81.40.Gh.

  14. Dielectric and Energy Storage Properties of the Heterogeneous P(VDF-HFP)/PC Composite Films

    Science.gov (United States)

    Zhao, Xiaojia; Peng, Guirong; Zhan, Zaiji

    2016-09-01

    Polymer-based materials with a high discharge energy and low energy loss have attracted considerable attention for energy storage applications. A new class of polymer-based composite films composed of amorphous polycarbonate (PC) and poly(vinylidene fluoride-hexafluoropropylene) [P(VDF-HFP)] has been fabricated by simply solution blending followed by thermal treatment under vacuum. The results show that the diameter of the spherical phase for PC and the melting temperature of P(VDF-HFP) increase, and the crystallinity and crystallization temperature of P(VDF-HFP) decrease with increasing PC content. The phase transition from the polar β phase to weak polarity γ phase is induced by PC addition. Moreover, the Curie temperature of the P(VDF-HFP)/PC composite films shifts to a lower temperature. With the addition of PC, the permittivity, polarization and discharge energy of the P(VDF-HFP)/PC composite films slightly decrease. However, the energy loss is significantly reduced.

  15. Deposition of dielectric films on silicon using a fore-vacuum plasma electron source.

    Science.gov (United States)

    Zolotukhin, D B; Oks, E M; Tyunkov, A V; Yushkov, Yu G

    2016-06-01

    We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

  16. Chain-length dependent para-phenyelene film- and needle-growth on dielectrics

    DEFF Research Database (Denmark)

    Balzer, Frank; Rubahn, Horst-Günter

    2004-01-01

    Surface unit cells of vacuum grown ultrathin films of blue-light emitting para-phenylene oligomers on alkali halides and on muscovite mica have been determined using low energy electron diffraction. Both, films from upright and from laying molecules are grown on alkali halide (1 0 0) and mica (0 ...... by the orientation of mica surface dipoles. Structural information from diffraction experiments is complemented by morphological information using fluorescence- and atomic force microscopy as well as UV/vis absorption spectroscopy....

  17. Laser drilling of vias in dielectric for high density multilayer LSHI thick film circuits

    Science.gov (United States)

    Cocca, T.; Dakesian, S.

    1977-01-01

    A design analysis of a high density multilevel thick film digital microcircuit used for large scale integration is presented. The circuit employs 4 mil lines, 4 mil spaces and requires 4 mil diameter vias. Present screened and fired thick film technology is limited on a production basis to 16 mil square vias. A process whereby 4 mil diameter vias can be fabricated in production using laser technology was described along with a process to produce 4 mil diameter vias for conductor patterns which have 4 mil lines and 4 mil spacings.

  18. Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

    Energy Technology Data Exchange (ETDEWEB)

    Zolotukhin, D. B.; Tyunkov, A. V.; Yushkov, Yu. G., E-mail: yuyushkov@gmail.com [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Oks, E. M. [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

    2016-06-15

    We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

  19. Effects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor

    Science.gov (United States)

    Song, J. Q.; Qian, L. X.; Lai, P. T.

    2016-10-01

    The effects of Ta incorporation in Y2O3 gate dielectric on the electrical characteristics of InGaZnO thin-film transistor are investigated. With an appropriate Ta content in the Y2O3 gate dielectric, the saturation mobility of the thin-film transistor can be significantly increased, about three times that of the control sample with Y2O3 gate dielectric. Accordingly, the sample with a Ta/Ta+Y ratio of 68.6% presents a high saturation mobility of 33.5 cm2 V-1 s-1, low threshold voltage of 2.0 V, large on/off current ratio of 2.8 × 107, and suppressed hysteresis. This can be attributed to the fact that the Ta incorporation can suppress the hygroscopicity of Y2O3 and thus reduces the Y2O3/InGaZnO interface roughness and also the traps at/near the interface, as supported by atomic force microscopy and low-frequency noise measurement, respectively. However, excessive Ta incorporation in the Y2O3 gate dielectric leads to degradation in device performance because Ta-related defects are generated.

  20. Mesoporous TiO2 films fabricated using atmospheric pressure dielectric barrier discharge jet.

    Science.gov (United States)

    Seo, Hyung-Kee; Elliott, C Michael; Shin, Hyung-Shik

    2010-12-01

    TiO2 nanoparticles were synthesized by a facile method of dielectric barrier discharge jet (DBD jet) for the dye-sensitized solar cell (DSSC) and other potential applications. DBD jet is utilized as a method for deposition of TiO2 nanoparticles with a 9 μm/min growth rate which is more than ×25 faster than reported previously. Their performance was compared with cells fabricated using commercial TiO2 nanoparticles (P25). The crystallinity and chemical bonding states of samples were characterized by XRD and XPS. Photoanodes fabricated by the DBD jet method resulted in approximately 50% higher photoconversion efficiency than ones prepared from P25 nanoparticles.

  1. Dielectric studies of boron sub phthalocyanine chloride thin films by admittance spectroscopic techniques

    Energy Technology Data Exchange (ETDEWEB)

    Kalia, Sameer; Neerja [Department of Physics, DAV College, Amritsar-143301 (India); Mahajan, Aman, E-mail: dramanmahajan@yahoo.co.in; Sharma, Anshul Kumar; Kumar, Sanjeev; Bedi, R. K. [Material Research Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar-143005 (India)

    2016-05-06

    The dielectric properties of Boron Sub Phthalocyanine Chloride (Cl-SubPc) thermally deposited on ITO substrate have been studied using admittance spectroscopic techniques. The I-V and capacitance –frequency (C-F) studies at various bias voltages reveal that the mobility of charge carriers decrease with bias voltage, however the conduction phenomenon still remain hopping in nature. From the differential susceptance curve, the contribution of the Schottky barrier contact in the charge carrier concentration was found to be absent. The mobility of charge carriers have been determined using differential susceptance variation and from the phase of admittance curve. The values obtained in two cases have been found to be in agreement with each other.

  2. Enhanced transmission through arrays of subwavelength holes in gold films coated by a finite dielectric layer

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Mortensen, Niels Asger; Qiu, M.

    2007-01-01

    Enhanced transmissions through a gold film with arrays of subwavelength holes are theoretically studied, employing the rigid full vectorial three dimensional finite difference time domain method. Influence of air-holes shape to the transmission is firstly studied, which confirms two different...

  3. Surface modification of nanofibrillated cellulose films by atmospheric pressure dielectric barrier discharge

    DEFF Research Database (Denmark)

    Siró, Istvan; Kusano, Yukihiro; Norrman, Kion

    2013-01-01

    -of-flight secondary ion mass spectrometry, while surface morphology was illustrated by atomic force microscopy. Wettability was characterized through the static sessile drop method. The adhesion between NFC and polylactide (PLA) laminated films was tested by the double cantilever beam technique. As a result...

  4. Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

    Science.gov (United States)

    Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

    2014-12-24

    The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

  5. Physical characterization of semicontinuous silver and gold films on dielectric substrates

    Science.gov (United States)

    Nelson, Mark A.

    Semicontinuous metallic films possess unique optical and electrical transport properties resulting from strong localization and large enhancement of electric fields in the very near surface region. The field distributions and electrical transport properties of these films depend on the structural geometry and morphology of the samples and therefore also on the metal concentration, with distinctive properties near the percolation threshold where an insulator-to-metal transition occurs. This dissertation focuses on an experimental investigation of the linear and nonlinear optical, electrical transport and structural properties of semicontinuous silver-glass and gold-glass composites near the percolation threshold. The samples were synthesized by pulsed laser ablation and an effort was made to identify the percolation threshold in terms of structural properties using transmission electron microscopy as well as electrical resistivity and optical transmission through in situ measurements during sample synthesis. A study of the differences in silver and gold semicontinuous film morphology on silicon oxide versus carbon-formvar substrates was performed. A detailed study was performed of visible and near infrared photoluminescence or "white light" generation by semicontinuous gold and silver films upon excitation by 780 nm 150 fs pulsed and CW laser irradiation. The results of this study supported theoretical predictions that spectral continuum generation would be significantly enhanced at metal fill fractions close to the percolation threshold due to the high degree of electromagnetic field localization. It was shown that in both gold and silver semicontinuous films, visible photoluminescence occurs via a nonlinear mechanism and near infrared photoluminescence via a linear one, both dramatically enhanced by electromagnetic field localization. The mechanism of visible photoluminescence in silver is believed to be different from that in gold and white light generation

  6. AC Conductivity and Dielectric Relaxation Behavior of Sol-gel BaxSr1-xTiO3 Thin Films

    Institute of Scientific and Technical Information of China (English)

    Ala'eddin A. Saif; P. Poopalan

    2011-01-01

    BaxSr1-xTiO3 sol-gel thin films with x--0.5, 0.7 and 0.8 have been fabricated as AI/BST/Pt capacitor. The AC conductivity and dielectric properties over a frequency rang of 10 Hz and I MHz have been studied in order to explore the ion dynamics and relaxation mechanisms in the films. The frequency dependent conductivity plots show three regions of conduction processes. Dielectric results show that ε' at low frequencies increases as Sr content decreases, whereas at high frequencies, it shows opposite variation, which is attributed to the dipole dynamics. The electric modulus plots reveal the relaxation peaks which are not observed in the ε" plots and the contribution of the grains, grain boundaries and electrode to the relaxation mechanisms.

  7. Thickness and dielectric constant determination of thin dielectric layers

    NARCIS (Netherlands)

    Bruijn, de Helene E.; Minor, Marcel; Kooyman, Rob P.H.; Greve, Jan

    1993-01-01

    We derive a method for the determination of the dielectric constant and thickness of a thin dielectric layer, deposited on top of a thick dielectric layer which is in turn present on a metal film. Reflection of p- and s-polarized light from the metal layer yields minima for certain angles of inciden

  8. Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

    Science.gov (United States)

    Jeong, Seong-Jun; Kim, Hyo Won; Heo, Jinseong; Lee, Min-Hyun; Song, Hyun Jae; Ku, JiYeon; Lee, Yunseong; Cho, Yeonchoo; Jeon, Woojin; Suh, Hwansoo; Hwang, Sungwoo; Park, Seongjun

    2016-09-01

    Among the most fundamental challenges encountered in the successful incorporation of graphene in silicon-based electronics is the conformal growth of ultrathin dielectric films, especially those with thicknesses lower than 5 nm, on chemically inert graphene surfaces. Here, we present physisorbed-precursor-assisted atomic layer deposition (pALD) as an extremely robust method for fabricating such films. Using atomic-scale characterisation, it is confirmed that conformal and intact ultrathin Al2O3 films can be synthesised on graphene by pALD. The mechanism underlying the pALD process is identified through first-principles calculations based on density functional theory. Further, this novel deposition technique is used to fabricate two types of wafer-scale devices. It is found that the incorporation of a 5 nm-thick pALD Al2O3 gate dielectric film improves the performance of metal-oxide-graphene field-effect transistors to a greater extent than does the incorporation of a conventional ALD Al2O3 film. We also employ a 5 nm-thick pALD HfO2 film as a highly scalable dielectric layer with a capacitance equivalent oxide thickness of 1 nm in graphene-based tunnelling field-effect transistors fabricated on a glass wafer and achieve a subthreshold swing of 30 mV/dec. This significant improvement in switching allows for the low-voltage operation of an inverter within 0.5 V of both the drain and the gate voltages, thus paving the way for low-power electronics.

  9. Influence of temperature and frequency on the AC conductivity and dielectric properties for Ge{sub 15}Se{sub 60}Bi{sub 25} amorphous films

    Energy Technology Data Exchange (ETDEWEB)

    Atyia, H.E., E-mail: hebaelghrip@hotmail.com; Hegab, N.A.; Affi, M.A.; Ismail, M.I.

    2013-10-15

    Highlights: •σ{sub ac}(ω) obeyed the Aω{sup s} law, s is the frequency exponent decreases with increasing temperature. •σ{sub ac}(ω) increases with increasing temperature, with two slopes which suggests two different regimes σ{sub f}, σ{sub s.} •The dielectric constant ε{sub 1} and dielectric loss ε{sub 2} increase with temperature and decrease with frequency. •Value of the maximum barrierheight W{sub m} is in good agreement with the theory of hopping. -- Abstract: Thin films of Ge{sub 15}Se{sub 60}Bi{sub 25} are prepared by thermal evaporation technique on to well cleaned glass substrates. The film thicknesses are measured by quartz crystal monitor method. Thin film capacitors of the type (Al–Ge{sub 15}Se{sub 60}Bi{sub 25}–Al) have been fabricated. The films were well characterized by X-ray diffraction, differential thermal analysis and energy dispersive X-ray spectroscopy. AC conduction and dielectric studies performed on a stabilized samples of thickness range (89.3–214.3 nm) at various frequencies (10{sup 2}–10{sup 5} Hz) and temperatures (303–413 K). From the AC conduction studies, it is confirmed that the mechanism responsible for the conduction process is hopping. The variations of the dielectric constant and loss as function of frequency and temperature are observed and the results are discussed. Finally, the maximum barrier height W{sub m} and the density of states N(E{sub F}) were determined.

  10. Environmentally stable flexible metal-insulator-metal capacitors using zirconium-silicate and hafnium-silicate thin film composite materials as gate dielectrics.

    Science.gov (United States)

    Meena, Jagan Singh; Chu, Min-Ching; Wu, Chung-Shu; Ravipati, Srikanth; Ko, Fu-Hsiang

    2011-08-01

    Fully flexible metal-insulator-metal (MIM) capacitors fabricated on 25 microm thin polyimide (PI) substrates via the surface sol-gel process using 10-nm-thick zirconium-silicate (ZrSixOy) and hafnium-silicate (HfSimOn) films as gate dielectrics. The surface morphology of the ZrSixOy and HfSimOn films were investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free surface growth had occurred on the PI. Both the films treated with oxygen (O2) plasma and annealing (ca. 250 degrees C) consisted of amorphous phase; confirmed by X-ray diffraction. We employed X-ray photoelectron spectroscopy (XPS) at high resolution to examine the chemical composition of the films subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy revealed the O2 plasma-pretreatment followed by annealing was the most effective process to the surface oxidation at relatively low-temperature, for further passivate the grease traps and making dielectric films thermally stable. The ZrSixOy and HfSimOn films in sandwich-like MIM configuration on the PI substrates exhibited the low leakage current densities of 7.1 x 10(-9) and 8.4 x 10(-9) A/cm2 at applied electric field of 10 MV/cm and maximum capacitance densities of 7.5 and 5.3 fF/microm2 at 1 MHz, respectively. In addition, the ZrSixOy and HfSimOn films in MIM capacitors showed the estimated dielectric constants of 8.2 and 6.0, respectively. Prior to use of flexible MIM capacitors in advanced flexible electronic devices; the reliability test was studied by applying day-dependent leakage current density measurements up to 30 days. These films of silicate-surfactant mesostructured materials have special interest to be used as gate dielectrics in future for flexible metal-oxide-semiconductor devices.

  11. An insight into the epitaxial nanostructures of NiO and CeO{sub 2} thin film dielectrics for AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lo Nigro, Raffaella, E-mail: raffaella.lonigro@imm.cnr.it [Istituto per la Microelettronica e Microsistemi-Consiglio Nazionale delle Ricerche – (IMM-CNR), Strada VIII 5, 95121 Catania (Italy); Fisichella, Gabriele [Istituto per la Microelettronica e Microsistemi-Consiglio Nazionale delle Ricerche – (IMM-CNR), Strada VIII 5, 95121 Catania (Italy); Battiato, Sergio [Dipartimento di Scienze Chimiche, Università degli Studi di Catania, and INSTM udr Catania, viale Andrea Doria 6, 95125 Catania (Italy); Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio [Istituto per la Microelettronica e Microsistemi-Consiglio Nazionale delle Ricerche – (IMM-CNR), Strada VIII 5, 95121 Catania (Italy); Malandrino, Graziella [Dipartimento di Scienze Chimiche, Università degli Studi di Catania, and INSTM udr Catania, viale Andrea Doria 6, 95125 Catania (Italy)

    2015-07-15

    Nickel oxide and cerium oxide thin films have been grown by metal-organic chemical vapor deposition on AlGaN/GaN heterostructures. Thin and epitaxial layers have been already obtained at low temperature (500 °C). Despite the two oxides possess the same crystal structure (face cubic centered compounds), different structural relationships have been observed with respect to the substrate. In particular, nickel oxide films were epitaxially grown along the <111> direction, while cerium oxide thin films showed <111> and <100> preferential orientations. These structural relationships have been justified by geometric and/or kinetics factors. In both cases, the epitaxial growth has been obtained at low temperature by the implementation of two second generation metal precursors, namely the nickel 2-thenoyl-trifluoroacetonate adduct with the tetramethylethylendiamine and cerium 1,1,1,5,5,5-hexafluoroacetlyacetonate adduct with bis(2-methoxyethyl) ether. Electrical characterization demonstrated that these films can be very promising as gate dielectrics for AlGaN/GaN transistors technology. In fact, the two oxide films showed really interesting electric properties such as dielectric constants (ε{sub NiO} = 11.7 and ε{sub CeO2} = 26) close to the bulk values. Finally, it is noteworthy that among the widely used physical deposition methods, in this paper a chemical based deposition technique has been addressed for the epitaxial growth at low temperature of oxide thin films to be implemented in microelectronics applications. - Highlights: • NiO and CeO{sub 2} films were grown as gate dielectric on GaN microelectronics devices. • <111>Epitaxial NiO growth was obtained at low temperature by MOCVD on GaN. • Oriented <111> and <100> CeO{sub 2} films were grown at low temperature by MOCVD on GaN. • Different orientations were explained by geometrical factors and theoretical models. • NiO and CeO{sub 2} electrical properties shown promising gate dielectric behaviours.

  12. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors.

    Science.gov (United States)

    Xu, Wangying; Wang, Han; Xie, Fangyan; Chen, Jian; Cao, Hongtao; Xu, Jian-Bin

    2015-03-18

    We developed a facile and environmentally friendly solution-processed method for aluminum oxide (AlOx) dielectrics. The formation and properties of AlOx thin films under various annealing temperatures were intensively investigated by thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), spectroscopic ellipsometry, atomic force microscopy (AFM), attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS), impedance spectroscopy, and leakage current measurements. The sol-gel-derived AlOx thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide, as the annealing temperature increases. Finally, the AlOx film is used as gate dielectric for a variety of low-temperature solution-processed oxide TFTs. Above all, the In2O3 and InZnO TFTs exhibited high average mobilities of 57.2 cm(2) V(-1) s(-1) and 10.1 cm(2) V(-1) s(-1), as well as an on/off current ratio of ∼10(5) and low operating voltages of 4 V at a maximum processing temperature of 300 °C. Therefore, the solution-processable AlOx could be a promising candidate dielectric for low-cost, low-temperature, and high-performance oxide electronics.

  13. Semicrystalline Structure-Dielectric Property Relationship and Electrical Conduction in a Biaxially Oriented Poly(vinylidene fluoride) Film under High Electric Fields and High Temperatures.

    Science.gov (United States)

    Yang, Lianyun; Ho, Janet; Allahyarov, Elshad; Mu, Richard; Zhu, Lei

    2015-09-16

    Poly(vinylidene fluoride) (PVDF)-based homopolymers and copolymers are attractive for a broad range of electroactive applications because of their high dielectric constants. Especially, biaxially oriented PVDF (BOPVDF) films exhibit a DC breakdown strength as high as that for biaxially oriented polypropylene films. In this work, we revealed the molecular origin of the high dielectric constant via study of a commercial BOPVDF film. By determination of the dielectric constant for the amorphous phase in BOPVDF, a high value of ca. 21-22 at 25 °C was obtained, and a three-phase (i.e., lamellar crystal/oriented interphase/amorphous region) semicrystalline model was proposed to explain this result. Meanwhile, electronic conduction mechanisms in BOPVDF under high electric fields and elevated temperatures were investigated by thermally stimulated depolarization current (TSDC) spectroscopy and leakage current studies. Space charge injection from metal electrodes was identified as a major factor for electronic conduction when BOPVDF was poled above 75 °C and 20 MV/m. In addition, when silver or aluminum were used as electrodes, new ions were generated from electrochemical reactions under high fields. Due to the electrochemical reactions between PVDF and the metal electrode, a question is raised for practical electrical applications using PVDF and its copolymers under high-field and high-temperature conditions. A potential method to prevent electrochemical degradation of PVDF is proposed in this study.

  14. The effect of copper concentration on structural, optical and dielectric properties of Cu xZn 1 - xS thin films

    Science.gov (United States)

    Ali Yıldırım, M.

    2012-03-01

    Cu xZn 1 - xS ( x = 0, 0.25, 0.50, 0.75, 1) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The copper concentration ( x) effect on the structural, morphological and optical properties of Cu xZn 1 - xS thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing copper concentration. The energy bandgap values were changed from 2.07 to 3.67 eV depending on the copper concentration. The refractive index ( n), optical static and high frequency dielectric constants ( ɛo, ɛ∞) values were calculated by using the energy bandgap values as a function of the copper concentration.

  15. Polyimide/nanosized CaCu3Ti4O12 functional hybrid films with high dielectric permittivity

    Science.gov (United States)

    Yang, Yang; Zhu, Ben-Peng; Lu, Zhi-Hong; Wang, Zi-Yu; Fei, Chun-Long; Yin, Di; Xiong, Rui; Shi, Jing; Chi, Qing-Guo; Lei, Qing-Quan

    2013-01-01

    This work reports the high dielectric permittivity of polyimide (PI) embedded with CaCu3Ti4O12 (CCTO) nanoparticles. The dielectric behavior has been investigated over a frequency of 100 Hz-1 MHz. High dielectric permittivity (ɛ = 171) and low dielectric loss (tan δ = 0.45) at 100 Hz have been observed near the percolation threshold. The experimental results fit well with the Percolation theory. We suggest that the high dielectric permittivity originates from the large interface area and the remarkable Maxwell-Wagner-Sillars effect at percolation in which nomadic charge carriers are blocked at internal interfaces between CCTO nanoparticles and the polyimide matrix.

  16. Sol-Gel Processing of Low Dielectric Constant Nanoporous Silica Thin Films

    Science.gov (United States)

    2001-11-01

    under the influence of attractive van der Waals forces. Spin coating has been used to deposit the porous thin silica films on desired substrates. This...for spin coating using a Model PC 101 spinner by Headway Research, Inc. All the wafers were used as-received without any pretreatment process... spin coating . Spin coating did not start until the solution reached the about-to-gel point, approximately 6/7 of its gelation time. After spin

  17. Positioning of the Precursor Gas Inlet in an Atmospheric Dielectric Barrier Reactor, and its Effect on the Quality of Deposited TiOx Thin Film Surface

    Directory of Open Access Journals (Sweden)

    Jan Píchal

    2013-01-01

    Full Text Available Thin film technology has become pervasive in many applications in recent years, but it remains difficult to select the best deposition technique. A further consideration is that, due to ecological demands, we are forced to search for environmentally benign methods. One such method might be the application of cold plasmas, and there has already been a rapid growth in studies of cold plasma techniques. Plasma technologies operating at atmospheric pressure have been attracting increasing attention. The easiest way to obtain low temperature plasma at atmospheric pressure seems to be through atmospheric dielectric barrier discharge (ADBD. We used the plasma enhanced chemical vapour deposition (PECVD method applying atmospheric dielectric barrier discharge (ADBD plasmafor TiOx thin films deposition, employing titanium isopropoxide (TTIP and oxygen as reactants, and argon as a working gas. ADBD was operated in filamentary mode. The films were deposited on glass. We studied the quality of the deposited TiOx thin film surface for various precursor gas inlet positions in the ADBD reactor. The best thin films quality was achieved when the precursor gases were brought close to the substrate surface directly through the inlet placed in one of the electrodes.High hydrophilicity of the samples was proved by contact angle tests (CA. The film morphology was tested by atomic force microscopy (AFM. The thickness of the thin films varied in the range of (80 ÷ 210 nm in dependence on the composition of the reactor atmosphere. XPS analyses indicate that composition of the films is more like the composition of TiOxCy.

  18. Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55 Thin Film on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Tao Zhang

    2015-01-01

    Full Text Available The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS. The ternary compound ferroelectric thin films 0.06Pb(Mn1/3, Nb2/3O3 + 0.94Pb(Zr0.45, Ti0.55O3 (0.06PMnN-0.94PZT(45/55 were deposited on silicon(100 substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55 films were also deposited. The results show that both of thin films show polycrystal structures with the main (111 and (101 orientations. The transverse piezoelectric coefficients are e31,eff=−4.03 C/m2 and e31,eff=-3.5 C/m2, respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are 2Ec=147.31 kV/cm and 2Ec=135.44 kV/cm, and the saturation polarization Ps=30.86 μC/cm2 and Ps=17.74 μC/cm2, and the remnant polarization Pr=20.44 μC/cm2 and Pr=9.87 μC/cm2, respectively. Moreover, the dielectric constants and loss are εr=681 and D=5% and εr=537 and D=4.3%, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55 thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.

  19. Functionalization of Hydrogen-free Diamond-like Carbon Films using Open-air Dielectric Barrier Discharge Atmospheric Plasma Treatments

    Energy Technology Data Exchange (ETDEWEB)

    Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA; Instituto de Materiales de Madrid, C.S.I.C., Cantoblanco, 28049 Madrid, Spain; Instituto de Quimica-Fisica" Rocasolano" C.S.I.C., 28006 Madrid, Spain; Mahasarakham University, Mahasarakham 44150, Thailand; CASTI, CNR-INFM Regional Laboratory, L' Aquila 67100, Italy; SUNY Upstate Medical University, Syracuse, NY 13210, USA; Endrino, Jose; Endrino, J. L.; Marco, J. F.; Poolcharuansin, P.; Phani, A.R.; Allen, M.; Albella, J. M.; Anders, A.

    2007-12-28

    A dielectric barrier discharge (DBD) technique has been employed to produce uniform atmospheric plasmas of He and N2 gas mixtures in open air in order to functionalize the surface of filtered-arc deposited hydrogen-free diamond-like carbon (DLC) films. XPS measurements were carried out on both untreated and He/N2 DBD plasma treated DLC surfaces. Chemical states of the C 1s and N 1s peaks were collected and used to characterize the surface bonds. Contact angle measurements were also used to record the short- and long-term variations in wettability of treated and untreated DLC. In addition, cell viability tests were performed to determine the influence of various He/N2 atmospheric plasma treatments on the attachment of osteoblast MC3T3 cells. Current evidence shows the feasibility of atmospheric plasmas in producing long-lasting variations in the surface bonding and surface energy of hydrogen-free DLC and consequently the potential for this technique in the functionalization of DLC coated devices.

  20. Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer

    Science.gov (United States)

    Mroczyński, R.; Wachnicki, Ł.; Gierałtowska, S.

    2016-12-01

    In this work, we present the design of the technology and fabrication of TFTs with amorphous IGZO semiconductor and high-k gate dielectric layer in the form of hafnium oxide (HfOx). In the course of this work, the IGZO fabrication was optimized by means of Taguchi orthogonal tables approach in order to obtain an active semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The obtained Thin-Film Transistors can be characterized by very good electrical parameters, i.e., the effective mobility (μeff ≍ 12.8 cm2V-1s-1) significantly higher than that for a-Si TFTs (μeff ≍ 1 cm2V-1s-1). However, the value of sub-threshold swing (i.e., 640 mV/dec) points that the interfacial properties of IGZO/HfOx stack is characterized by high value of interface states density (Dit) which, in turn, demands further optimization for future applications of the demonstrated TFT structures.

  1. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells

    Science.gov (United States)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm2, which is 48.76% higher than that of flat system.

  2. Magnet-free uniform sputtering of dielectric film by RF and microwave power superposition

    Science.gov (United States)

    Sasai, Kensuke; Hagihara, Toshiya; Noda, Tomonori; Suzuki, Haruka; Toyoda, Hirotaka

    2016-08-01

    A novel sputtering device that is free of magnets (magnet-free surface wave sputtering plasma: MF-SSP) is developed by combining a surface wave plasma and RF bias power. Low-pressure (<0.5 Pa) plasma sustainment is demonstrated by MF-SSP with a uniform sputter deposition rate with a deviation of less than 5% within an area of 10 × 10 cm2. Highly oriented MgO films are deposited at a substrate temperature of 200 °C.

  3. Ta{sub 2}O{sub 5}-based high-K dielectric thin films from solution processed at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Frunză, Raluca C., E-mail: raluca.frunza@ijs.si [Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Jožef Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana (Slovenia); Kmet, Brigita [Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Jankovec, Marko; Topič, Marko [Faculty of Electrical Engineering, University of Ljubljana, Tržaška cesta 25, 1000 Ljubljana (Slovenia); Malič, Barbara [Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia)

    2014-02-01

    Highlights: • Ta{sub 2}O{sub 5}–Al{sub 2}O{sub 3}–SiO{sub 2} (Ta:Al:Si = 8:1:1 atomic ratio) and Ta{sub 2}O{sub 5} films were processed from solutions. • The XRD-amorphous films, heated at or below 400 °C, are smooth (RMS < 0.5 nm). • The dielectric permittivity of the single- and mixed-oxide films heated at 400 °C is 27 and 22, respectively. • The current–voltage characteristics of the mixed-oxide films reveal the Poole–Frenkel behaviour. - Abstract: Ta{sub 2}O{sub 5}-based thin films were prepared by chemical solution deposition at temperatures not exceeding 400 °C. The aim of the work was to investigate the properties of high-K dielectric films of the ternary composition Ta{sub 2}O{sub 5}–Al{sub 2}O{sub 3}–SiO{sub 2} with the Ta:Al:Si = 8:1:1 atomic ratio. Pure Ta{sub 2}O{sub 5} samples were also prepared. All thin films were amorphous, and had smooth and flat surfaces with the average roughness of below 0.5 nm. The mixed oxide samples heated between 300 °C and 400 °C showed little difference in the dielectric permittivity with the values ranging from about 19 to 22. The Ta{sub 2}O{sub 5} film heated at 400 °C exhibited the highest permittivity of about 27. The current–voltage measurements revealed considerably improved characteristics of the Ta{sub 2}O{sub 5}–Al{sub 2}O{sub 3}–SiO{sub 2} samples within the investigated heating temperature range, with a significant overall decrease of the leakage currents in contrast to that of the pure Ta{sub 2}O{sub 5} thin films.

  4. Electroactive and High Dielectric Folic Acid/PVDF Composite Film Rooted Simplistic Organic Photovoltaic Self-Charging Energy Storage Cell with Superior Energy Density and Storage Capability.

    Science.gov (United States)

    Roy, Swagata; Thakur, Pradip; Hoque, Nur Amin; Bagchi, Biswajoy; Sepay, Nayim; Khatun, Farha; Kool, Arpan; Das, Sukhen

    2017-07-19

    Herein we report a simplistic prototype approach to develop an organic photovoltaic self-charging energy storage cell (OPSESC) rooted with biopolymer folic acid (FA) modified high dielectric and electroactive β crystal enriched poly(vinylidene fluoride) (PVDF) composite (PFA) thin film. Comprehensive and exhaustive characterizations of the synthesized PFA composite films validate the proper formation of β-polymorphs in PVDF. Significant improvements of both β-phase crystallization (F(β) ≈ 71.4%) and dielectric constant (ε ≈ 218 at 20 Hz for PFA of 7.5 mass %) are the twosome realizations of our current study. Enhancement of β-phase nucleation in the composites can be thought as a contribution of the strong interaction of the FA particles with the PVDF chains. Maxwell-Wagner-Sillars (MWS) interfacial polarization approves the establishment of thermally stable high dielectric values measured over a wide temperature spectrum. The optimized high dielectric and electroactive films are further employed as an active energy storage material in designing our device named as OPSESC. Self-charging under visible light irradiation without an external biasing electrical field and simultaneous remarkable self-storage of photogenerated electrical energy are the two foremost aptitudes and the spotlight of our present investigation. Our as fabricated device delivers an impressively high energy density of 7.84 mWh/g and an excellent specific capacitance of 61 F/g which is superior relative to the other photon induced two electrode organic self-charging energy storage devices reported so far. Our device also proves the realistic utility with good recycling capability by facilitating commercially available light emitting diode.

  5. Ac conductivity and dielectric spectroscopy studies on tin oxide thin films formed by spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    Au/tin oxide/n-Si (1 0 0) structure has been created by forming a tin oxide (SnO{sub 2}) on n-type Si by using the spray deposition technique. The ac electrical conductivity (σ{sub ac}) and dielectric properties of the structure have been investigated between 30 kHz and 1 MHz at room temperature. The values of ε', ε″, tanδ, σ{sub ac}, M' and M″ were determined as 1.404, 0.357, 0.253, 1.99×10{sup −7} S/cm, 0.665 and 0.168 for 1 MHz and 6.377, 6.411, 1.005, 1.07×10{sup −7} S/cm, 0.077 and 0.078 for 30 kHz at zero bias, respectively. These changes were attributed to variation of the charge carriers from the interface traps located between semiconductor and metal in the band gap. It is concluded that the values of the ε', ε″ and tanδ increase with decreasing frequency while a decrease is seen in σ{sub ac} and the real (M') and imaginary (M″) components of the electrical modulus. The M″ parameter of the structure has a relaxation peak as a function of frequency for each examined voltage. The relaxation time of M″(τ{sub M″}) varies from 0.053 ns to 0.018 ns with increasing voltage. The variation of Cole–Cole plots of the sample shows that there is one relaxation.

  6. Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

    Science.gov (United States)

    Mu, Yifei; Zhao, Ce Zhou; Lu, Qifeng; Zhao, Chun; Qi, Yanfei; Lam, Sang; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2017-09-01

    This paper reports the low-dose-rate radiation response of Al-HfO2/SiO2-Si MOS devices, in which the gate dielectric was formed by atomic layer deposition (ALD) with 5-nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radiation response technique under continuous gamma (γ) ray exposure at a relatively low dose rate of 0.116 rad (HfO2)/s. Compared with conventional CV measurements, the proposed measurements extract significant variations of flat-band voltage shift of the hafnium based MOS devices. The large flat-band voltage shift is mainly attributed to the radiation-induced oxide trapped charges, which are not readily compensated by bias-induced charges produced over the measurement timescales (for timescales less than 5 ms). A negative flat-band voltage shift up to -1.02 V was observed under a positive biased irradiation with the total dose up to 40 krad (HfO2) and with the electric field of 0.5 MV/cm. This is attributed to net positive charge generation in the HfO2 oxide layer. The generated charges are transported towards the HfO2/SiO2 interface, and then form effective trapped holes in the HfO2. Similarly, a positive flat-band voltage shift up to 1.1 V was observed from irradiation under negative bias with an electric field of -0.5 MV/cm. The positive shift is mainly due to the accumulation of trapped electrons. Analyses of the experimental results suggest that both hole and electron trapping can dominate the radiation response performance of the HfO2-based MOS devices depending upon the applied bias. It was also found there was no distinct border traps with irradiation in all cases.

  7. Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Huaping, E-mail: wuhuaping@gmail.com, E-mail: hpwu@zjut.edu.cn [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024 (China); Ma, Xuefu; Zhang, Zheng; Zeng, Jun; Chai, Guozhong [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); Wang, Jie [Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027 (China)

    2016-01-15

    The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO{sub 3} films. The increase of compressive strain will dramatically enhance the Curie temperature T{sub C} of (110)-oriented BaTiO{sub 3} films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

  8. Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

    Directory of Open Access Journals (Sweden)

    Huaping Wu

    2016-01-01

    Full Text Available The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110 orientation leads to a lower symmetry and more complicated phase transition than the (111 orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110- and (111-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

  9. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

    Science.gov (United States)

    Liu, Ao; Liu, Guo Xia; Zhu, Hui Hui; Xu, Feng; Fortunato, Elvira; Martins, Rodrigo; Shan, Fu Kai

    2014-10-22

    We reported here "aqueous-route" fabrication of In2O3 thin-film transistors (TFTs) using an ultrathin solution-processed ZrOx dielectric thin film. The formation and properties of In2O3 thin films under various annealing temperatures were intensively examined by thermogravimetric analysis, Fourier transform infrared spectroscopy, and atomic force microscopy. The solution-processed ZrOx thin film followed by sequential UV/ozone treatment and low-temperature thermal-annealing processes showed an amorphous structure, a low leakage-current density (∼1 × 10(-9) A/cm(2) at 2 MV/cm), and a high breakdown electric field (∼7.2 MV/cm). On the basis of its implementation as the gate insulator, the In2O3 TFTs based on ZrOx annealed at 250 °C exhibit an on/off current ratio larger than 10(7), a field-effect mobility of 23.6 cm(2)/V·s, a subthreshold swing of 90 mV/decade, a threshold voltage of 0.13 V, and high stability. These promising properties were obtained at a low operating voltage of 1.5 V. These results suggest that "aqueous-route" In2O3 TFTs based on a solution-processed ZrOx dielectric could potentially be used for low-cost, low-temperature-processing, high-performance, and flexible devices.

  10. Structural and dielectric behavior of pulsed laser ablated Sr 0.6Ca 0.4TiO 3 thin film and asymmetric multilayer of SrTiO 3 and CaTiO 3

    Science.gov (United States)

    Chakraborty, Pradip; Choudhury, Palash Roy; Krupanidhi, S. B.

    2011-12-01

    Homogeneous thin films of Sr 0.6Ca 0.4TiO 3 (SCT40) and asymmetric multilayer of SrTiO 3 (STO) and CaTiO 3 (CTO) were fabricated on Pt/Ti/SiO 2/Si substrates by using pulsed laser deposition technique. The electrical behavior of films was observed within a temperature range of 153 K-373 K. A feeble dielectric peak of SCT40 thin film at 273 K is justified as paraelectric to antiferroelectric phase transition. Moreover, the Curie-Weiss temperature, determined from the ɛ'( T) data above the transition temperature is found to be negative. Using Landau theory, the negative Curie-Weiss temperature is interpreted in terms of an antiferroelectric transition. The asymmetric multilayer exhibits a broad dielectric peak at 273 K, and is attributed to interdiffusion at several interfaces of multilayer. The average dielectric constants for homogeneous Sr 0.6Ca 0.4TiO 3 films (˜650) and asymmetric multilayered films (˜350) at room temperature are recognized as a consequence of grain size effect. Small frequency dispersion in the real part of the dielectric constants and relatively low dielectric losses for both cases ensure high quality of the films applicable for next generation integrated devices.

  11. Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry

    Science.gov (United States)

    Dey, S. K.; Wang, C.-G.; Tang, D.; Kim, M. J.; Carpenter, R. W.; Werkhoven, C.; Shero, E.

    2003-04-01

    A 4 nm layer of ZrOx (targeted x˜2) was deposited on an interfacial layer (IL) of native oxide (SiO, t˜1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 300 °C. Some as-deposited layers were subjected to a postdeposition, rapid thermal annealing at 700 °C for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-ZrO2 (t-ZrO2) and monoclinic-ZrO2 (m-ZrO2) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper SiO2-rich Zr silicate and the lower SiOx. The latter was substoichiometric and the average oxidation state increased from Si0.86+ in SiO0.43 (as-deposited) to Si1.32+ in SiO0.66 (annealed). This high oxygen deficiency in SiOx was indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor (MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multilayer nanostructure and nanochemistry that

  12. Dielectric Enhancement and Maxwell-Wagner Effect in Polycrystalline BaTiO3/Ba0.2Sr0.8TiO3 Multilayered Thin Films

    Institute of Scientific and Technical Information of China (English)

    葛水兵; 沈明荣; 宁兆元

    2002-01-01

    Polycrystalline BaTiO3/Ba0.2Sr0.sTiO3 multilayer thin films were fabricated by pulsed laser deposition onto Pt/Ti/SiO2/Si substrates with various stacking periodicities. The dielectric constant of the films was obviously enhanced with the decrease of the individual layer thickness, while the dielectric loss was kept at a low level comparable to that of the pure Ba0.6Sr0.4TiO3 thin films. The Maxwell-Wagner model is used to explain the experimental data.

  13. Effect of gate-dielectrics on the electrical characteristics of solution-processed single-wall-carbon-nanotube thin-film transistors

    Science.gov (United States)

    Ha, Tae-Jun

    2017-02-01

    High performance of solution-processed, single-wall-carbon-nanotube (SWCNT) thin-film transistors (TFTs) is investigated through the use in the different gate-dielectrics of silicon dioxide (SiO2), silicon nitride (SiNx), the bilayers of SiO2 and SiNx, and hexagonal boron-nitride (h-BN) thin films. The different interfacial characteristics affect the electrical characteristics of the SWCNT-TFTs including key device metrics. Significantly, the hysteresis window that is normally observed in drop-casted SWCNT-TFTs was majorly suppressed by the employment of a thin lower dielectric-constant material on a higher dielectricconstant material. Sub-2V operating SWCNT-TFTs with solution-processed h-BN gate dielectrics with good above- and sub-threshold characteristics are also investigated on the basis of interfacial characteristics underlying the device physics. Such performance can be realized by the suppressed interfacial impurity scattering through the chemically clean interface combined with optimized solution-process below 100 °C. [Figure not available: see fulltext.

  14. Surface treatment of polypropylene (PP) film by 50 Hz dielectric barrier discharge produced in air and argon/air mixture at atmospheric pressure

    Science.gov (United States)

    Joshi, Ujjwal Man; Subedi, Deepak Prasad

    2015-07-01

    Thin films of polypropylene (PP) are treated for improving hydrophilicity using non-thermal plasma generated by 50 Hz line frequency dielectric barrier discharge produced in air and argon/air mixture at atmospheric pressure. PP samples before and after the treatments are studied using contact angle measurements, surface free energy calculations and scanning electron microscopy (SEM). Distilled water (H2O), glycerol (C3H8O3) and diiodomethane (CH2I2) are used as test liquids. The contact angle measurements between test liquids and PP samples are used to determine total surface free energy using sessile drop technique. PP films show a remarkable increase in surface free energy after plasma treatment. SEM analysis of the plasma-treated PP films shows that plasma treatment introduces greater roughness on the surface leading to the increased surface free energy. Furthermore, it is found that introducing a small quantity of argon can enhance the surface treatment remarkably.

  15. Surface treatment of high density polyethylene (HDPE film by 50 Hz dielectric barrier discharge produced in air and argon/air mixture at atmospheric pressure

    Directory of Open Access Journals (Sweden)

    Joshi Ujjwal Man

    2015-03-01

    Full Text Available Thin films of high density polyethylene (HDPE are treated for improving hydrophilicity using non-thermal plasma generated by 50 Hz line frequency dielectric barrier discharge produced in air and argon/air mixture at atmospheric pressure. HDPE samples before and after the treatment are studied using contact angle measurements, surface free energy calculations and atomic force microscopy (AFM. Distilled water (H2O, glycerol (C3H8O3 and diiodomethane (CH2I2 are used as test liquids. The contact angle measurements between test liquids and HDPE samples are used to determine total surface free energy using sessile drop technique. HDPE films show a remarkable increase in surface free energy after plasma treatment. AFM analysis of the plasma-treated HDPE films shows that plasma treatment introduces greater roughness on the surface leading to the increased surface free energy. Furthermore, it is found that introducing a small quantity of argon can enhance the surface treatment remarkably.

  16. Enhanced electrical percolation due to interconnection of three-dimensional pentacene islands in thin films on low surface energy polyimide gate dielectrics.

    Science.gov (United States)

    Yang, Sang Yoon; Shin, Kwonwoo; Kim, Se Hyun; Jeon, Hayoung; Kang, Jin Ho; Yang, Hoichang; Park, Chan Eon

    2006-10-19

    The role of lateral interconnections between three-dimensional pentacene islands on low surface energy polyimide gate dielectrics was investigated by the measurement of the surface coverage dependence of the charge mobility and the use of conducting-probe atomic force microscopy (CP-AFM). From the correlation between the electrical characteristics and the morphological evolution of the three-dimensionally grown pentacene films-based field-effect transistors, we found that during film growth, the formation of interconnections between the three-dimensional pentacene islands that are isolated at the early stage contributes significantly to the enhancement process of charge mobility. The CP-AFM current mapping images of the pentacene films also indicate that the lateral interconnections play an important role in the formation of good electrical percolation pathways between the three-dimensional pentacene islands.

  17. Low-temperature conductivity of tunnel-coupled quantum dots system in YBaCuO and LaSrMnO dielectric films

    CERN Document Server

    Okunev, V D; Isaev, V A; Dyachenko, A T; Klimov, A; Lewandowski, S J

    2002-01-01

    Paper contains new experimental data concerning investigation into the nature of rho(T) approx = const conductivity segments at T < T sub c for YBaCuO and LaSrMnO dielectric films prepared by means of laser deposition and containing nanocrystalline clusters with metallic conductivity. In YBaCuO epitaxial films with a tetragonal structure rho = rho(T) approx = const (T sub c = 10 K) dependences are observed following the effect of (KrF) excimer laser emission on the specimens, while in LaSrMnO amorphous films (T sub c approx = 160 K) - immediately after they are prepared. rho(T) approx = const effect manifests itself if in the optical spectra of specimens there are regions of absorption by free charge carriers and is associated with a tunnel conductivity of a system of quantum points

  18. Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Karteri, İbrahim, E-mail: ibrahimkarteri@gmail.com [Department of Materials Science And Engineering, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Karataş, Şükrü [Department of Physics, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610 (Turkey); Yakuphanoğlu, Fahrettin [Department of Physics, Fırat University, Elazıg 2310 (Turkey)

    2014-11-01

    Highlights: • We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor. • Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. • We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor. - Abstract: We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and I{sub on}/I{sub off} of GO-TFT were found to be 0.105 cm{sup 2} V{sup −1} s{sup −1}, −8.7 V, 4.03 V/decade and 10, respectively.

  19. ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode

    Indian Academy of Sciences (India)

    Sefa B K Aydin; Dilber E Yildiz; Hatice Kanbur Çavuş; Recep Şahingöz

    2014-12-01

    Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias current–voltage (–) characteristics of diode were studied. Using thermionic emission (TE) theory, the main electrical parameters of the Al/TiO2/p-Si Schottky diode such as ideality factor (), zero bias barrier height (Bo) and series resistance (s) were estimated from forward bias – plots. At the same time, values of , Bo and s were obtained from Cheung’s method. It was shown that electrical parameters obtained from TE theory and Cheung’s method exhibit close agreement with each other. The reverse-bias leakage current mechanism of Al/TiO2/p-Si Schottky barrier diodes was investigated. The – curves in the reverse direction are taken and interpreted via both Schottky and Poole–Frenkel effects. Schottky effect was found to be dominant in the reverse direction. In addition, the capacitance–voltage (–) and conductance–voltage (/–) characteristics of diode were investigated at different frequencies (50–500 kHz). The frequency dependence of interface states density was obtained from the Hill–Coleman method and the voltage dependence of interface states density was obtained from the high–low frequency capacitance method.

  20. Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Narasimhan, Vijay K.; Hymel, Thomas M.; Lai, Ruby A.; Cui, Yi

    2017-01-03

    An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

  1. Experimental study on the dielectric properties of polyacrylate dielectric elastomer

    Science.gov (United States)

    Qiang, Junhua; Chen, Hualing; Li, Bo

    2012-02-01

    The dielectric constant of elastomeric dielectric material is an essential physical parameter, whose value may affect the electromechanical deformation of a dielectric elastomer actuator. Since the dielectric constant is influenced by several external factors as reported before, and no certain value has been confirmed to our knowledge, in the present paper, on the basis of systematical comparison of recent past literature, we conducted extensive works on the measurement of dielectric properties of VHB films, involving five influencing factors: prestretch (both equal and unequal biaxial), electrical frequency, electrode material, stress relaxation time and temperature. Experimental results directly show that the dielectric response changes according to these factors, based on which we investigate the significance of each factor, especially the interaction of two external conditions on the dielectric constant of deformable dielectric, by presenting a physical picture of the mechanism of polarization.

  2. Research Update: Polyimide/CaCu3Ti4O12 nanofiber functional hybrid films with improved dielectric properties

    Science.gov (United States)

    Yang, Yang; Wang, Ziyu; Ding, Yi; Lu, Zhihong; Sun, Haoliang; Li, Ya; Wei, Jianhong; Xiong, Rui; Shi, Jing; Liu, Zhengyou; Lei, Qingquan

    2013-11-01

    This work reports the excellent dielectric properties of polyimide (PI) embedded with CaCu3Ti4O12 (CCTO) nanofibers. The dielectric behaviors were investigated over a frequency of 100 Hz-1 MHz. It is shown that embedding CCTO nanofibers with high aspect ratio (67) is an effective means to enhance the dielectric permittivity and reduce the percolation threshold. The dielectric permittivity of PI/CCTO nanofiber composites is 85 with 1.5 vol.% loading of filler, also the dielectric loss is only 0.015 at 100 Hz. Monte Carlo simulation was used to investigate the percolation threshold of CCTO nanofibers reinforced polyimide matrix by using excluded volume theory and soft, hard-core models. The results are in good agreement with the percolation theory and the hard-core model can well explain the percolation phenomena in PI/CCTO nanofiber composites. The dielectric properties of the composites will meet the practical requirements for the application in high dielectric constant capacitors and high energy density materials.

  3. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    Science.gov (United States)

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  4. Research Update: Polyimide/CaCu3Ti4O12 nanofiber functional hybrid films with improved dielectric properties

    Directory of Open Access Journals (Sweden)

    Yang Yang

    2013-11-01

    Full Text Available This work reports the excellent dielectric properties of polyimide (PI embedded with CaCu3Ti4O12 (CCTO nanofibers. The dielectric behaviors were investigated over a frequency of 100 Hz–1 MHz. It is shown that embedding CCTO nanofibers with high aspect ratio (67 is an effective means to enhance the dielectric permittivity and reduce the percolation threshold. The dielectric permittivity of PI/CCTO nanofiber composites is 85 with 1.5 vol.% loading of filler, also the dielectric loss is only 0.015 at 100 Hz. Monte Carlo simulation was used to investigate the percolation threshold of CCTO nanofibers reinforced polyimide matrix by using excluded volume theory and soft, hard-core models. The results are in good agreement with the percolation theory and the hard-core model can well explain the percolation phenomena in PI/CCTO nanofiber composites. The dielectric properties of the composites will meet the practical requirements for the application in high dielectric constant capacitors and high energy density materials.

  5. Study on preparation and dielectric properties of cellular polyimide films%聚酰亚胺多孔膜的制备与介电性能研究

    Institute of Scientific and Technical Information of China (English)

    楚晖娟; 魏宏亮; 朱宝库; 徐又一

    2011-01-01

    To explore low dielectric polyimide,cellular polyimide films were prepared from pyromellitic dianhydride and 4,4′-diaminodiphenyl ether via a combined technique of solution induced phase separation and thermal imidization.These polyimide films displayed good thermal stability.SEM analyses showed that the obtained polyimide films had various cellular structures with the different conditions,such as the composition and temperature of coagulation bath,staying time,etc.The films with sponge-like cellular structures exhibited lower dielectric constants than those with finger-like structures.When the film was prepared in the conditions the coagulation bath of DMAc/H2O of 20/80,the temperature of 25℃ and the staying time of 20min,the film was full of sponge-like structure and its dielectric constant was low to 1.45.%以均苯四甲酸二酐和4,4′-二氨基二苯醚为原料合成聚酰亚胺前体聚酰胺酸溶液,通过溶液诱导相分离和热酰亚胺化法制备聚酰亚胺多孔膜。结果表明,用该方法得到的聚酰亚胺多孔膜具有较好的热稳定性。SEM分析显示,在不同的凝胶浴组成、凝胶浴温度和挥发时间等制膜条件下,可得到不同孔结构的多孔膜。与指状孔膜相比,海绵状孔多孔膜具有较低的介电常数。当凝胶浴组成DMAc/H2O为20/80、凝固浴温度为25℃、挥发时间为20min时,多孔膜断面几乎完全由海绵状孔组成,介电常数为1.45。

  6. Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Institute of Scientific and Technical Information of China (English)

    Tian Ben-Lang; Chen Chao; Li Yan-Rong; Zhang Wan-Li; Liu Xing-Zhao

    2012-01-01

    Sodium beta-alumina (SBA) is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al2O3 as the precursors.The X-ray diffraction (XRD) spectrum reveals that the deposited thin film is amorphous.The binding energy and composition of the deposited thin film,obtained from the X-ray photoelectron spectroscopy (XPS)measurement,are consistent with those of SBA.The dielectric constant of the SBA thin film is about 50.Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and A1GaN.The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT)is measured to be (3.5~9.5)× 1010 cm-2.eV-1 by the conductance method.The fixed charge density of SBA dielectric is on the order of 2.7x1012 cm-2.Compared with the AlGaN/GaN metal semiconductor hetcrostructure high-electron-mobility transistor (MESHEMT),the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively.However,the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from -5.5 V to-3.5 V.From XPS results,the surface valence-band maximum (VBM-EF) of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition.The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum (VBM-EF),the reduction of interface traps and the effects of sodium ions,and/or the fixed charges in SBA on the two-dimensional electron gas (2DEG).

  7. Self-assembled monolayers of cyclohexyl-terminated phosphonic acids as a general dielectric surface for high-performance organic thin-film transistors.

    Science.gov (United States)

    Liu, Danqing; He, Zikai; Su, Yaorong; Diao, Ying; Mannsfeld, Stefan C B; Bao, Zhenan; Xu, Jianbin; Miao, Qian

    2014-11-12

    A novel self-assembled monolayer (SAM) on AlOy /TiOx is terminated with cyclohexyl groups, an unprecedented terminal group for all kinds of SAMs. The SAM-modified AlOy /TiOx functions as a general dielectric, enabling organic thin-film transistors with a field-effect mobility higher than 5 cm(2) V(-1) s(-1) for both holes and electrons, good air stability with low operating voltage, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic semiconductors.

  8. Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

    Science.gov (United States)

    Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

    2016-12-01

    In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

  9. Optical, electrical and dielectric properties of TiO2-SiO2 films prepared by a cost effective sol-gel process.

    Science.gov (United States)

    Vishwas, M; Rao, K Narasimha; Gowda, K V Arjuna; Chakradhar, R P S

    2011-12-01

    Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (100) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200°C for their possible use in optoelectronic applications.

  10. Electrical characteristics of top contact pentacene organic thin film transistors with SiO2 and poly(methyl methacrylate) as gate dielectrics

    Indian Academy of Sciences (India)

    Jaya Lohani; Praveen Saho; Upender Kumar; V R Balakrishnan; P K Basu

    2008-09-01

    Organic thin film transistors (OTFTs) were fabricated using pentacene as the active layer with two different gate dielectrics, namely SiO2 and poly(methyl methacrylate) (PMMA), in top contact geometry for comparative studies. OTFTs with SiO2 as dielectric and gold deposited on the rough side of highly doped silicon (n+ -Si) as gate electrode exhibited reasonable field effect mobilities. To deal with poor stability and large leakage currents between source/drain and gate electrodes in these devices, isolated OTFTs with reduced source/drain contact area were fabricated by selective deposition of pentacene on SiO2/PMMA through shadow mask. This led to almost negligible leakage currents and no degradation in electrical performance even after 14 days of storage under ambient conditions. But, the field effect mobilities obtained were lower than 10-3 cm2 V-1 s-1, whereas by using PMMA as gate dielectric with chromium deposited on the polished side of n+ -Si as gate electrode, improved field effect mobilities (> 0.02 cm2 V-1 s-1) were obtained. PMMA-based OTFTs also exhibited lower leakage currents and reproducible output characteristics even after 30 days of storage under ambient conditions.

  11. Tunability, dielectric, and piezoelectric properties of Ba(1-x)CaxTi(1-y)ZryO3 ferroelectric thin films

    Science.gov (United States)

    Daumont, C. J. M.; Simon, Q.; Le Mouellic, E.; Payan, S.; Gardes, P.; Poveda, P.; Negulescu, B.; Maglione, M.; Wolfman, J.

    2016-03-01

    Tunable ferroelectric capacitors, which exhibit a decrease of the dielectric permittivity (ɛ) under electric field, are widely used in electronics for RF tunable applications (e.g., antenna impedance matching). Current devices use barium strontium titanate as the tunable dielectric, and the need for performance enhancement of the tunable element is the key for device improvement. We report here on libraries of Ba0.97Ca0.03Ti1-xZrxO3 thin films (0 ≤ x ≤ 27%) with a thickness of about 130 nm deposited on IrO2/SiO2/Si substrates using combinatorial pulsed laser deposition allowing for gradients of composition on one sample. A total of 600 capacitors on a single sample were characterized in order to statistically investigate the dielectric properties. We show that the tunabilty is maximum at intermediate compositions, reaching values up to 60% for an electric field of about 400 kV cm-1. We attribute the high tunability in the intermediate compositions to the paraelectric-ferroelectric phase transition, which is brought down to room temperature by the addition of Zr. In addition, the piezoelectric coefficient is found to be decreasing with increasing Zr content.

  12. Analyzing the equilibrium states of a quasi-neutral spatially inhomogeneous system of charges above a liquid dielectric film based on the first principles of quantum statistics

    Science.gov (United States)

    Lytvynenko, D. M.; Slyusarenko, Yu V.

    2017-08-01

    A theory of quasi-neutral equilibrium states of charges above a liquid dielectric surface is developed. This theory is based on the first principles of quantum statistics for systems comprising many identical particles. The proposed approach involves applying the variational principle, modified for the considered systems, and the Thomas-Fermi model. In the terms of the developed theory self-consistency equations are obtained. These equations provide the relation between the main parameters describing the system: the potential of the static electric field, the distribution function of charges and the surface profile of the liquid dielectric. The equations are used to study the phase transition in the system to a spatially periodic state. The proposed method can be applied in analyzing the properties of the phase transition in the system in relation to the spatially periodic states of wave type. Using the analytical and numerical methods, we perform a detailed study of the dependence of the critical parameters of such a phase transition on the thickness of the liquid dielectric film. Some stability criteria for the new asymmetric phase of the studied system are discussed.

  13. Selective reflection technique as a probe to monitor the growth of a metallic thin film on dielectric surfaces

    CERN Document Server

    Martins, Weliton Soares; Chevrollier, Martine; de Silans, Thierry Passerat

    2013-01-01

    Controlling thin film formation is technologically challenging. The knowledge of physical properties of the film and of the atoms in the surface vicinity can help improve control over the film growth. We investigate the use of the well-established selective reflection technique to probe the thin film during its growth, simultaneously monitoring the film thickness, the atom-surface van der Waals interaction and the vapor properties in the surface vicinity.

  14. Preparation of Polyimide Porous Film with Low Dielectric Constant%低介电常数聚酰亚胺多孔薄膜的制备

    Institute of Scientific and Technical Information of China (English)

    汪英; 周福龙; 王汝柯; 李耀星

    2015-01-01

    以3,3′,4,4′-联苯四甲酸二酐和4,4′-二氨基二苯醚为单体,以三聚氰胺为成孔剂,制得一种聚酰亚胺多孔薄膜,并对薄膜的微观结构、力学性能及介电常数等进行测试。结果表明:制备该聚酰亚胺多孔薄膜的成孔工艺简单可行,三聚氰胺成孔剂可用热水溶解的方法去除。多孔薄膜孔洞数量多,且分布比较均匀。薄膜的介电常数较低、力学性能良好、吸湿率较低。当三聚氰胺添加量分别为25%和40%时,聚酰亚胺多孔薄膜的介电常数分别为1.82和1.36,聚酰亚胺多孔薄膜的拉伸强度分别为86 MPa和74 MPa,断裂伸长率分别为15%和10%。%A polyimide porous film was prepared by using 3,3’,4,4’-biphenyltetracarboxylic dianhydride and 4,4’-diaminodiphenyl ether as monomer, melamine as pore-forming agent, and its microstructure, mechanical properties, and dielectric constant were tested. The results show that the pore-forming process of the polyimide porous film is simple and feasible, and the melamine can be dissolved by hot water. The porous films have a great number of pores and their distribution is uniform. And the porous poly-imide films have low dielectric constant, good mechnical properties, and low water absorption. When the melamine addition content is 25% and 40%, the dielectric constant of the porous polyimide film is 1.82 and 1.36, the tensile strength is 86 MPa and 74 MPa, and the elongation at break is 15% and 10%, respectively.

  15. PI/AIN纳米复合薄膜结构与介电性能研究%Structure and Dielectric Properties of PI/AIN Hybrid Film

    Institute of Scientific and Technical Information of China (English)

    李广; 殷景华; 刘晓旭; 冯宇; 田付强; 雷清泉

    2011-01-01

    采用原位聚合法制备了聚酰亚胺/氮化铝(PI/AlN)纳米复合薄膜,用小角散射(SAXS)、扫描电镜(SEM)对薄膜进行表征,研究了不同纳米掺杂量对材料电阻率、介电常数(ε)和介质损耗因数(tanδ)的影响.结果表明,随着纳米AlN含量的增加,分形结构由质量分形转变为表面分形,当AlN含量为1%时,复合薄膜的介电常数达到最低值,电阻率提高了一个数量级;介质损耗在低频范围内明显增加;AlN的掺杂提高了纳米复合薄膜的绝缘性能.%A polyimide/aluminum nitride(PI/A1N) nano-composite film was prepared by in-situ poly merization method. The microscopic structure of the film was characterized by small angle scat tering (SAXS) and scanning electron microscope (SEM) . The effects of nano-AIN content on the volume resistivity, permittivity(e) and dielectric loss of the film were studied. The results show that with increasing the nano-AIN content, the fractal structure changes from quality fractal to surface fractal. The permittivity of the film attains the minimum value when the nano-AIN content is 1%. The volume resistivity is increased by one order of magnitude, and the dielectric loss in creases obviously in low frequency range, which indicates that the addition of A1N can improve the insulation performance.

  16. Magnetic and dielectric properties of layered perovskite Gd2Ti2O7 thin film epitaxially stabilized on a perovskite single crystal

    Science.gov (United States)

    Ukita, Takashi; Hirose, Yasushi; Ohno, Sawako; Hatabayashi, Kunitada; Fukumura, Tomoteru; Hasegawa, Tetsuya

    2012-04-01

    Layered perovskite (LP) titanates, Ln2Ti2O7 (Ln = lanthanoids), are ferroelectric materials containing magnetic Ln3+ ions at A-site. Metastable LP-Gd2Ti2O7 was fabricated in epitaxial thin film form on lattice-matched perovskite substrates and its dielectric and magnetic properties were investigated. The (100)-oriented LP-Gd2Ti2O7 films were epitaxially grown on (110) plane of (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (LSAT) and Nb-doped SrTiO3 by using a pulsed laser deposition method. Piezoresponse force microscope measurements revealed that LP-Gd2Ti2O7 has spontaneous polarization along the b-axis at room temperature, strongly suggesting room temperature ferroelectricity. Magnetization measurements showed paramagnetic behavior with weak antiferromagnetic interaction around 2 K. Small positive magneto-dielectric effect (Δɛ/ɛ ˜ 10-5 order) was also confirmed at 10 K.

  17. Synthesis and electrical characterization of low-temperature thermal-cured epoxy resin/functionalized silica hybrid-thin films for application as gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Na, Moonkyong, E-mail: nmk@keri.re.kr [HVDC Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); System on Chip Chemical Process Research Center, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784 (Korea, Republic of); Kang, Young Taec [Creative and Fundamental Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); Department of Polymer Science and Engineering, Pusan National University, Busan, 609-735 (Korea, Republic of); Kim, Sang Cheol [HVDC Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of); Kim, Eun Dong [Creative and Fundamental Research Division, Korea Electrotechnology Research Institute, Changwon, 642-120 (Korea, Republic of)

    2013-07-31

    Thermal-cured hybrid materials were synthesized from homogenous hybrid sols of epoxy resins and organoalkoxysilane-functionalized silica. The chemical structures of raw materials and obtained hybrid materials were characterized using Fourier transform infrared spectroscopy. The thermal resistance of the hybrids was enhanced by hybridization. The interaction between epoxy matrix and the silica particles, which caused hydrogen bonding and van der Waals force was strengthened by organoalkoxysilane. The degradation temperature of the hybrids was improved by approximately 30 °C over that of the parent epoxy material. The hybrid materials were formed into uniformly coated thin films of about 50 nm-thick using a spin coater. An optimum mixing ratio was used to form smooth-surfaced hybrid films. The electrical property of the hybrid film was characterized, and the leakage current was found to be well below 10{sup −6} A cm{sup −2}. - Highlights: • Preparation of thermal-curable hybrid materials using epoxy resin and silica. • The thermal stability was enhanced through hybridization. • The insulation property of hybrid film was investigated as gate dielectrics.

  18. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-12-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade(-1) and 3.62 × 10(11) eV(-1) cm(-2), respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  19. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

    Science.gov (United States)

    Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

    2016-04-01

    In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade-1 and 3.62 × 1011 eV-1 cm-2, respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

  20. Microstructural and dielectric susceptibility effects on predictions of dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Ferris, K.F.; Exarhos, G.J. [Pacific Northwest National Lab., Richland, WA (United States); Risser, S.M. [Texas A& M Univ., Commerce, TX (United States)

    1997-12-01

    In modeling the dielectric properties of inhomogeneous materials, the treatment of the electric field interactions differentiate the usual modeling formalisms (such as the Maxwell-Garnett and Bruggeman effective medium methods) and their accuracy. In this paper, we show that the performance of effective medium methods is dependent upon a number of variables - defect concentration, alignment, and the dielectric constant of the material itself. Using our previously developed finite element model of an inhomogeneous dielectric, we have developed models for a number of dielectric films of varying dielectric constant and microstructures. Alignment of defects parallel to the applied field and the larger defect aspect ratios increase the overall dielectric constant. The extent of these effects is dependent on the dielectric constant of the bulk component.

  1. 基于介电谱分析聚酰亚胺薄膜的老化特征%Aging Characteristics of Polyimide Film Based on Dielectric Spectra

    Institute of Scientific and Technical Information of China (English)

    高波; 吴广宁; 曹开江; 罗杨; 王鹏; 崔易

    2011-01-01

    The accelerated aging test of common and nano polyimide film was conducted under bipolar impulses voltage. The dielectric frequency spectra and temperature spectra of the film be fore and after aging were analyzed. The relationships between microscopic molecular structure and macroscopic dielectric property were studied by SEM. The results show that the dipole relaxation loss peak in high frequency region moves towards higher frequency and the loss peak originated from interface polarization in low temperature region towards higher temperature after aging. And the aging breaks down the molecular chain of the film and generates polar molecules with small molecular weight, making the orientation polarization be built more easily. The addition of nanometer reduces the destroying effect of aging factor on the internal structure of the film, thus greatly decreasing the relaxation loss originated from dipole orientation polarization. A great deal of interface defects are formed from nano-doping which greatly increase the dielectric loss origi nated from interface polarization.%对纳米和普通聚酰亚胺薄膜进行了双极性脉冲电压下的老化试验,分析了薄膜老化前后的介电频率谱和温度谱,并借助电镜扫描分析,研究了薄膜老化前后的微观结构形态与宏观介电性能之间的关系.结果表明:老化使聚酰亚胺薄膜介电频率谱中的偶极子弛豫损耗峰向高频移动,低温区的界面极化损耗峰向高温移动;且老化使聚酰亚胺薄膜分子链断裂,生成分子量小的极性分子,使取向极化更易建立;纳米粒子的加入,削弱了老化因子对聚酰亚胺薄膜内部结构的破坏作用,使偶极子取向带来的弛豫损耗大大减小;纳米掺杂形成大量的界面缺陷,使界面极化带来的介质损耗大大增加.

  2. Fabrication of CuAl1-xMxO2 (M = Fe, Cr)/Ni film delafossite compounds using spin coating and their microstructure and dielectric constant

    Science.gov (United States)

    Diantoro, Markus; Yuwita, Pelangi Eka; Olenka, Desyana; Nasikhudin

    2014-09-01

    The discovery of delafossite compound has encouraged more rapid technological developments particularly in transparent electronic devices. Copper oxide-based transparent thin films delafossite semiconductor recently give much attention in the field of optoelectronic technology, after the discovery of p-type CuAlO2. The potential applications of a p-type semiconductor transparent conductive oxides (TCO) have been applied in broad field of optoelectronics. To explore a broad physical properties interms of magnetic conducting subtitution is understudied. In this work we report the fabrication of delafossite film on Ni substrate and their characterization of CuAl1-xMxO2 delafossite compounds doped with Cr3+ and Fe3+ from the raw material of Cu(NO3)2˙3H2O, Al(NO3)3˙9H2O, Fe(NO3)3˙9H2O and Cr(NO3)3˙9H2O. The films were prepared using spin coating through a sol-gel technique at various concentrations of x = 0, 0.03, 0.04, and 0.05 for chromium and x = 0, 0.02, 0.04, 0.06, and 0.08 for iron doped. Crystal and microstructure were characterized by means of Cu-Kα Bragg-Brentano X-RD followed by High Score Plus and SEM-EDAX. The dielectric constants of the films were characterized using LCR meter. It was found that the CuAl1-xMxO2/Ni delafossite films were successfully fabricated. The CuAl1-xFexO2 compound crystallized with lattice parameters of a = b ranged from 2.8603 Å to 2.8675 Å and c ranged from 16.9576 to 17.0763 Å. The increase of the dopant give rise to the increase of the lattice parameters. Since iron has bigger ionic radius (69 pm) than original site of Al3+ with radius of 53 pm the crystal volume lattice also increase. Further analyses of increasing volume of the crystal, as expected, affected to the decreasing of its dielectric constant. The similar trends also shown by Cr3+ doped of CuAl1-xCrxO2 films with smaller effects.

  3. Response of the capacitance and dielectric loss of the SrRuO3/SrTiO3/SrRuO3 film heterostructures to variations in temperature and electric field

    Science.gov (United States)

    Boikov, Yu. A.; Danilov, V. A.

    2016-10-01

    Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance ( C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2-300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ɛ) of the SrTiO3 intermediate layer is well approximated by the Curie-Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ɛ of the SrTiO3 intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.

  4. Artificial Dielectric Shields for Integrated Transmission Lines

    NARCIS (Netherlands)

    Ma, Y.; Rejaei, B.; Zhuang, Y.

    2008-01-01

    We present a novel shielding method for on-chip transmission lines built on conductive silicon substrates. The shield consists of an artificial dielectric with a very high in-plane dielectric constant, built from two patterned metal layers isolated by a very thin dielectric film. Inserted below an i

  5. A system for measuring complex dielectric properties of thin films at submillimeter wavelengths using an open hemispherical cavity and a vector network analyzer

    Science.gov (United States)

    Rahman, Rezwanur; Taylor, P. C.; Scales, John A.

    2013-08-01

    Quasi-optical (QO) methods of dielectric spectroscopy are well established in the millimeter and submillimeter frequency bands. These methods exploit standing wave structure in the sample produced by a transmitted Gaussian beam to achieve accurate, low-noise measurement of the complex permittivity of the sample [e.g., J. A. Scales and M. Batzle, Appl. Phys. Lett. 88, 062906 (2006);, 10.1063/1.2172403 R. N. Clarke and C. B. Rosenberg, J. Phys. E 15, 9 (1982);, 10.1088/0022-3735/15/1/002 T. M. Hirovnen, P. Vainikainen, A. Lozowski, and A. V. Raisanen, IEEE Trans. Instrum. Meas. 45, 780 (1996)], 10.1109/19.516996. In effect the sample itself becomes a low-Q cavity. On the other hand, for optically thin samples (films of thickness much less than a wavelength) or extremely low loss samples (loss tangents below 10-5) the QO approach tends to break down due to loss of signal. In such a case it is useful to put the sample in a high-Q cavity and measure the perturbation of the cavity modes. Provided that the average mode frequency divided by the shift in mode frequency is less than the Q (quality factor) of the mode, then the perturbation should be resolvable. Cavity perturbation techniques are not new, but there are technological difficulties in working in the millimeter/submillimeter wave region. In this paper we will show applications of cavity perturbation to the dielectric characterization of semi-conductor thin films of the type used in the manufacture of photovoltaics in the 100 and 350 GHz range. We measured the complex optical constants of hot-wire chemical deposition grown 1-μm thick amorphous silicon (a-Si:H) film on borosilicate glass substrate. The real part of the refractive index and dielectric constant of the glass-substrate varies from frequency-independent to linearly frequency-dependent. We also see power-law behavior of the frequency-dependent optical conductivity from 316 GHz (9.48 cm-1) down to 104 GHz (3.12 cm-1).

  6. A system for measuring complex dielectric properties of thin films at submillimeter wavelengths using an open hemispherical cavity and a vector network analyzer.

    Science.gov (United States)

    Rahman, Rezwanur; Taylor, P C; Scales, John A

    2013-08-01

    Quasi-optical (QO) methods of dielectric spectroscopy are well established in the millimeter and submillimeter frequency bands. These methods exploit standing wave structure in the sample produced by a transmitted Gaussian beam to achieve accurate, low-noise measurement of the complex permittivity of the sample [e.g., J. A. Scales and M. Batzle, Appl. Phys. Lett. 88, 062906 (2006); R. N. Clarke and C. B. Rosenberg, J. Phys. E 15, 9 (1982); T. M. Hirovnen, P. Vainikainen, A. Lozowski, and A. V. Raisanen, IEEE Trans. Instrum. Meas. 45, 780 (1996)]. In effect the sample itself becomes a low-Q cavity. On the other hand, for optically thin samples (films of thickness much less than a wavelength) or extremely low loss samples (loss tangents below 10(-5)) the QO approach tends to break down due to loss of signal. In such a case it is useful to put the sample in a high-Q cavity and measure the perturbation of the cavity modes. Provided that the average mode frequency divided by the shift in mode frequency is less than the Q (quality factor) of the mode, then the perturbation should be resolvable. Cavity perturbation techniques are not new, but there are technological difficulties in working in the millimeter/submillimeter wave region. In this paper we will show applications of cavity perturbation to the dielectric characterization of semi-conductor thin films of the type used in the manufacture of photovoltaics in the 100 and 350 GHz range. We measured the complex optical constants of hot-wire chemical deposition grown 1-μm thick amorphous silicon (a-Si:H) film on borosilicate glass substrate. The real part of the refractive index and dielectric constant of the glass-substrate varies from frequency-independent to linearly frequency-dependent. We also see power-law behavior of the frequency-dependent optical conductivity from 316 GHz (9.48 cm(-1)) down to 104 GHz (3.12 cm(-1)).

  7. Dielectric spectroscopy of polyaniline

    Energy Technology Data Exchange (ETDEWEB)

    Calleja, R.D.; Matveeva, E.M. [Polytechnical Univ. of Valencia, (Spain)

    1993-12-31

    Polyaniline films (PANI) are being considered as attractive new galvanic sources, electrochromic displays, chemical sensors, etc. So far much work has been done to study their optical, electrochemical and electrical properties. However, there are still doubts about the basic electric conductivity mechanisms of PANI. The aim of this paper is to study the influence of water molecules and acid anions on the properties of PANI films by dielectric spectroscopy.

  8. Surface treatment of polypropylene (PP) film by 50 Hz dielectric barrier discharge produced in air and argon/air mixture at atmospheric pressure

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, Ujjwal Man, E-mail: umjoshi@gmail.com; Subedi, Deepak Prasad, E-mail: deepaksubedi2001@yahoo.com [Department of Natural Sciences (Physics), School of Science, Kathmandu University P. O. Box No. 6250, Dhulikhel, Kathmandu, Nepal (India)

    2015-07-31

    Thin films of polypropylene (PP) are treated for improving hydrophilicity using non-thermal plasma generated by 50 Hz line frequency dielectric barrier discharge produced in air and argon/air mixture at atmospheric pressure. PP samples before and after the treatments are studied using contact angle measurements, surface free energy calculations and scanning electron microscopy (SEM). Distilled water (H{sub 2}O), glycerol (C{sub 3}H{sub 8}O{sub 3}) and diiodomethane (CH{sub 2}I{sub 2}) are used as test liquids. The contact angle measurements between test liquids and PP samples are used to determine total surface free energy using sessile drop technique. PP films show a remarkable increase in surface free energy after plasma treatment. SEM analysis of the plasma-treated PP films shows that plasma treatment introduces greater roughness on the surface leading to the increased surface free energy. Furthermore, it is found that introducing a small quantity of argon can enhance the surface treatment remarkably.

  9. Synthesis and Characterizations of Novel Ca-Mg-Ti-Fe-Oxides Based Ceramic Nanocrystals and Flexible Film of Polydimethylsiloxane Composite with Improved Mechanical and Dielectric Properties for Sensors

    Science.gov (United States)

    Tripathy, Ashis; Pramanik, Sumit; Manna, Ayan; Azrin Shah, Nabila Farhana; Shasmin, Hanie Nadia; Radzi, Zamri; Abu Osman, Noor Azuan

    2016-01-01

    Armalcolite, a rare ceramic mineral and normally found in the lunar earth, was synthesized by solid-state step-sintering. The in situ phase-changed novel ceramic nanocrystals of Ca-Mg-Ti-Fe based oxide (CMTFOx), their chemical reactions and bonding with polydimethylsiloxane (PDMS) were determined by X-ray diffraction, infrared spectroscopy, and microscopy. Water absorption of all the CMTFOx was high. The lower dielectric loss tangent value (0.155 at 1 MHz) was obtained for the ceramic sintered at 1050 °C (S1050) and it became lowest for the S1050/PDMS nanocomposite (0.002 at 1 MHz) film, which was made by spin coating at 3000 rpm. The excellent flexibility (static modulus ≈ 0.27 MPa and elongation > 90%), viscoelastic property (tanδ = E″/E′: 0.225) and glass transition temperature (Tg: −58.5 °C) were obtained for S1050/PDMS film. Parallel-plate capacitive and flexible resistive humidity sensors have been developed successfully. The best sensing performance of the present S1050 (3000%) and its flexible S1050/PDMS composite film (306%) based humidity sensors was found to be at 100 Hz, better than conventional materials. PMID:26927116

  10. Synthesis and Characterizations of Novel Ca-Mg-Ti-Fe-Oxides Based Ceramic Nanocrystals and Flexible Film of Polydimethylsiloxane Composite with Improved Mechanical and Dielectric Properties for Sensors

    Directory of Open Access Journals (Sweden)

    Ashis Tripathy

    2016-02-01

    Full Text Available Armalcolite, a rare ceramic mineral and normally found in the lunar earth, was synthesized by solid-state step-sintering. The in situ phase-changed novel ceramic nanocrystals of Ca-Mg-Ti-Fe based oxide (CMTFOx, their chemical reactions and bonding with polydimethylsiloxane (PDMS were determined by X-ray diffraction, infrared spectroscopy, and microscopy. Water absorption of all the CMTFOx was high. The lower dielectric loss tangent value (0.155 at 1 MHz was obtained for the ceramic sintered at 1050 °C (S1050 and it became lowest for the S1050/PDMS nanocomposite (0.002 at 1 MHz film, which was made by spin coating at 3000 rpm. The excellent flexibility (static modulus ≈ 0.27 MPa and elongation > 90%, viscoelastic property (tanδ = E″/E′: 0.225 and glass transition temperature (Tg: −58.5 °C were obtained for S1050/PDMS film. Parallel-plate capacitive and flexible resistive humidity sensors have been developed successfully. The best sensing performance of the present S1050 (3000% and its flexible S1050/PDMS composite film (306% based humidity sensors was found to be at 100 Hz, better than conventional materials.

  11. Effect of lead on formation and dielectric tunability of(Pbx,Sr1-x)0.85Bi0.1TiO3 thin films

    Institute of Scientific and Technical Information of China (English)

    ZHAO Yonglin; DU Piyi; WENG Wenjian; HAN Gaorong

    2007-01-01

    (Pbx,Sr1-x)0.85Bi0.1TiO3 thin films with the perovs- kite phase structure were prepared on an ITO glass substrate by sol-gel method.X-ray diffraction (XRD),scanning electron microscopy (SEM) and an impedance analyzer were respectively used in order to characterize the phase status, morphology and dielectric properties of the thin films.The results show that during the formation process of (Pbx, Sr1-x)0.85Bi0.1TiO3 thin films,the nucleus of the perovskite phase are initially formed and then congregated.These aggregated nucleus are then transformed as the perovskite- phase crystalline in the thin film.Finally,the crystalline phase grows and separates gradually to form the perfect crystalline- phase structure.The content of the perovskite phase formed in the thin film under rapid thermal process (RTP) is more than that formed under traditional heat treatment with kinetic equilibrium.This is due to the high active decomposed ions that form the perovskite phase directly when heat-treated by RTP.The formation of the perovskite phase therefore overcomes a much lower barrier under RTP than that under traditional calcinations.The structure of the perovskite phase has a close relation to the ratio of Pb/Sr in the system because of the radius difference between Pb2+ and Sr2+.The transfor-mation temperature between the cubic and the tetragonal structures of the perovskite phase increases with increasing Pb2+ content because the radius of Pb2+ is larger than that of Sr2+.It appears at room temperature when the content ofpb2+/Sr2+ is about 40/60 in the thin film.Meanwhile,the tetragonality of the perovskite phase is increased when Pb2+ions increase due to its high polarization.The higher tunabil-ity of the (Pbx,Sr1-x)0.85Bi0.1TiO3 thin film is exhibited when the film composition is close to the transformation point between the paraelectric and ferroelectric phases.Pb2+ ions show a dominant factor to affect the Curie point of the system and then changing tunability.

  12. Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays.

    Science.gov (United States)

    Marette, Alexis; Poulin, Alexandre; Besse, Nadine; Rosset, Samuel; Briand, Danick; Shea, Herbert

    2017-08-01

    Flexible high-voltage thin-film transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a flexible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implements a zinc-tin oxide channel, a thick dielectric stack, and an offset gate. At a source-drain bias of 1 kV, the HVTFT has a 20 µA on-current at a gate voltage bias of 30 V. Their electrical characteristics enable the switching of DEAs which require drive voltages of over 1 kV, making control of an array simpler in comparison to the use of external high-voltage switching. These HVTFTs are integrated in a flexible haptic display consisting of a 4 × 4 matrix of DEAs and HVTFTs. Using a single 1.4 kV supply, each DEA is independently switched by its associated HVTFT, requiring only a 30 V gate voltage for full DEA deflection. The 4 × 4 display operates well even when bent to a 5 mm radius of curvature. By enabling DEA switching at low voltages, flexible metal-oxide HVTFTs enable complex flexible systems with dozens to hundreds of independent DEAs for applications in haptics, Braille displays, and soft robotics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

    Energy Technology Data Exchange (ETDEWEB)

    Gartner, M.; Stroescu, H. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Marin, A., E-mail: alexmarin@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Osiceanu, P. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Anastasescu, M., E-mail: manastasescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Stoica, M.; Nicolescu, M.; Duta, M.; Preda, S. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Aperathitis, E.; Pantazis, A.; Kampylafka, V. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

    2014-09-15

    Highlights: • Graded optical model for ITON films is presented. • ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient. • The lowest resistivity was 2 × 10{sup −3} Ω cm for films deposited in 75%N{sub 2} and RTA at 500 °C. • Films deposited in 75% N{sub 2} and RTA at 500 °C have degenerate semiconductor behavior. • Chemical composition before and after RTA has been analyzed by XPS depth profiling. - Abstract: The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80% In{sub 2}O{sub 3}–20% SnO{sub 2}) target in a mixture of Ar and N{sub 2} plasma (75% N{sub 2}–25% Ar and 100% N{sub 2} respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N{sub 2} ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV–vis–NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75% N{sub 2} and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.

  14. Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics.

    Science.gov (United States)

    Xu, Wangying; Cao, Hongtao; Liang, Lingyan; Xu, Jian-Bin

    2015-07-15

    We reported a novel aqueous route to fabricate Ga2O3 dielectric at low temperature. The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 °C. Furthermore, all aqueous solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 °C showed mobilities of 1.0 and 4.1 cm2 V(-1) s(-1), on/off current ratio of ∼10(5), low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.

  15. Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics

    Science.gov (United States)

    Lan, Linfeng; Xu, Miao; Peng, Junbiao; Xu, Hua; Li, Min; Luo, Dongxiang; Zou, Jianhua; Tao, Hong; Wang, Lei; Yao, Rihui

    2011-11-01

    Thin-film transistors (TFTs) based on indium-zinc oxide (IZO) active layer and anodic aluminum oxide (Al2O3) gate dielectric layer were fabricated. The influence of source and drain (S/D) contacts on TFT performance was investigated by comparing IZO-TFTs with different S/D electrodes. The TFT with Mo S/D electrodes had higher output current and lower threshold voltage, but had poorer subthreshold swing and lower effective electron mobility compared to that with ITO S/D electrodes. By using x-ray photoelectron spectroscopy (XPS) depth profile analyzing method, it was observed that Mo was diffusing seriously into IZO, resulting in the variation of the effective channel length, thereby causing serious short-channel effect, poor subshreshold swing, and bad uniformity of the TFTs with Mo S/D electrodes.

  16. Effect of Au nanosandwiching on the structural, optical and dielectric properties of the as grown and annealed InSe thin films

    Science.gov (United States)

    Omareya, Olfat A.; Qasrawi, A. F.; Al Garni, S. E.

    2017-09-01

    In the current work, the structural, optical and dielectric properties of the InSe/Au/InSe nanosandwiched structures are investigated by means of X-ray diffraction and UV-visible light spectrophotometry techniques. The insertion of a 20 and 100 nm thick Au metal slabs between two InSe layers did not alter the amorphous nature of the as grown InSe films but decreased the energy band gap and the free carrier density. It also increased; the absorption ratio and the values of dielectric constant by 3 times. The insertion of 100 nm Au layers as a nanosandwich enhanced the drift mobility (31.3 cm2/V s) and plasmon frequency (1.53 GHz) of the InSe films. On the other hand, upon annealing, a metal induced crystallization process is observed for the InSe/Au (100 nm)/InSe sandwiches. Particularly, while the samples sandwiched with a layer of 20 nm thickness hardly revealed hexagonal γ - In2Se3 when annealed at 300 °C, those sandwiched with 100 nm Au slab, displayed well crystalline phase of hexagonal γ - In2Se3 at annealing temperature of 200 °C. The further annealing at 300 °C, forced the appearing of the orthorhombic In4Se3 phase. Optically, the annealing of the InSe/Au(100 nm)/InSe at 200 °C improved the absorption ratio by 9 times and decreased the energy band gap. The nanosandwiching technique of InSe seems to be promising for the engineering of the optical properties of the InSe photovoltaic material.

  17. High Frequency Dielectric Characteristics of Electrochromic, WO3 and NiO Films with LiNbO3 Electrolyte

    Science.gov (United States)

    Bulja, S.; Kopf, R.; Tate, A.; Hu, T.

    2016-01-01

    A great deal of attention has been recently focused on Electrochromic (EC) materials and EC based devices, promoting mainly applications related to display technology. In this case, EC based displays are usually actuated by the application of low dc bias voltages, changing their appearance from transparent to opaque. A variety of studies related to the optical characteristics of EC materials have been reported, however, no serious studies so far have been reported on the possible high frequency tunability of the dielectric characteristics of these materials, with the exception of the work by Rose, which presented the operation of a microwave shutter based on conductive polymers operating in the X-band. Here we report tuneable high frequency dielectric characteristics of an Electrochromic (EC) cell with a complimentary structure of Conductor/WO3/LiNbO3/NiO/Conductor in the frequency range from 1 GHz to 20 GHz. The EC cell was prepared using standard semiconductor processing technology, such as lithography, etch and deposition techniques. Our measured results indicate that tunability of high frequency dielectric characteristics as a function of dc bias voltage is achieved, and that a possibility exists for this tunability to be tailored. PMID:27357480

  18. Origin of colossal dielectric response of CaCu3Ti4O12 studied by using CaTiO3/CaCu3Ti4O12/CaTiO3 multilayer thin films

    Science.gov (United States)

    Mitsugi, Masakazu; Asanuma, Shutaro; Uesu, Yoshiaki; Fukunaga, Mamoru; Kobayashi, Wataru; Terasaki, Ichiro

    2007-06-01

    To elucidate the origin of the colossal dielectric response (CDR) of CaCu3Ti4O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTiO3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329-435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor.

  19. Structure, chemistry and luminescence properties of dielectric La{sub x}Hf{sub 1-x}O{sub y} films

    Energy Technology Data Exchange (ETDEWEB)

    Kaichev, V.V., E-mail: vvk@catalysis.ru [Boreskov Institute of Catalysis, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Smirnova, T.P.; Yakovkina, L.V. [Nikolaev Institute of Inorganic Chemistry, Novosibirsk (Russian Federation); Ivanova, E.V.; Zamoryanskaya, M.V. [Ioffe Physical-Technical Institute, St. Petersburg (Russian Federation); Saraev, A.A. [Boreskov Institute of Catalysis, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Pustovarov, V.A. [Ural State Technical University, Ekaterinburg (Russian Federation); Perevalov, T.V.; Gritsenko, V.A. [Novosibirsk State University, Novosibirsk (Russian Federation); Rzhanov Institute of Semiconductor Physics, Novosibirsk (Russian Federation)

    2016-06-01

    Dielectric films of La{sub 2}O{sub 3}, HfO{sub 2}, and La{sub x}Hf{sub 1-x}O{sub y} were synthesized by metal-organic chemical vapor deposition. Structural, chemical, and luminescence properties of the films were studied using X-ray photoelectron spectroscopy, methods of X-ray diffraction and selected area electron diffraction, high-resolution transmission electron microscopy, and a cathodoluminescence technique. It was found that doping of hafnium oxide with lanthanum leads to the formation of a continuous series of solid solutions with a cubic structure. This process is accompanied by the formation of oxygen vacancies in the HfO{sub 2} lattice. Cathodoluminescence spectra of the La{sub x}Hf{sub 1-x}O{sub y}/Si films exhibited a wide band with the maximum near 2.4–2.5 eV, which corresponds to the blue emission. Quantum-chemical calculations showed that this blue band is due to oxygen vacancies in the HfO{sub 2} lattice. - Highlights: • HfO{sub 2} and solid solution La{sub x}Hf{sub 1-x}O{sub y} films were synthesized by MOCVD. • The continuous series of solid solutions with a cubic structure was formed at La doping of HfO{sub 2}. • Cathodoluminescence band at 2.4–2.5 eV is observed due to the oxygen vacancies in La{sub x}Hf{sub 1-x}O{sub y}. • The cathodoluminescence decreases in intensity when the La concentration increases.

  20. Sputtered (barium(x), strontium(1-x))titanate, BST, thin films on flexible copper foils for use as a non-linear dielectric

    Science.gov (United States)

    Laughlin, Brian James

    Ferroelectric thin film dielectrics have a non-linear DC bias dependent permittivity and can be used as the dielectric between metal electrodes to make tunable Metal-Insulator-Metal (MIM) capacitors. Varactors can be used to change the resonance frequency of a circuit allowing high speed frequency switching intra- and inter-band. 2-D geometric arrays of circuitry, where resonant frequency is independently controlled by tunable elements in each section of the array, allow electromagnetic radiation to be focused and the wave front spatial trajectory controlled. BST thin films varactors allow large DC fields to be applied with modest voltages providing large tunabilities. If ferroelectric thin film based devices are to complement or supplant semiconductor varactors as tunable elements then devices must be synthesized using a low cost processing techniques. The Film on Foil process methodology for depositing BST thin films on copper foil substrates was used to create BST/Cu specimens. Sputtering conditions were determined via BST deposition on platinized silicon. Sputtered BST thin films were synthesized on Cu foil substrates and densified using high T, controlled pO2 anneals. XRD showed the absence of Cu2O in as-deposited, post crystallization annealed, and post "re-ox" annealed state. Data showed a polycrystalline BST microstructure with a 55--80 nm grain size and no copper oxidation. HRTEM imaging qualitatively showed evidence of an abrupt BST/Cu interface free from oxide formation. Dielectric properties of Cu/BST/Pt MIM devices were measured as a function of DC bias, frequency, and temperature. A permittivity of 725 was observed with tunability >3:1 while zero bias tan delta of 0.02 saturating to tan delta 3:1 was maintained. These results provide a route for creating temperature stable capacitors using a BST/Cu embodiment. An effort to reduce surface roughness of copper foil substrates adversely impacted BST film integrity by impairing adhesion. XPS analysis of

  1. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode.

    Science.gov (United States)

    Huang, Genmao; Duan, Lian; Dong, Guifang; Zhang, Deqiang; Qiu, Yong

    2014-12-10

    Solution-processed metal oxide thin-film transistors (TFTs) operating in enhancement mode are promising for the next-generation flat panel displays. In this work, we report high-mobility TFTs based on SnO2 active layer derived from a soluble tin(II) 2-ethylhexanoate precursor. Densely packed polycrystalline SnO2 thin films with moderate oxygen vacancies and only a few hydroxides are obtained via systemically optimizing precursor concentrations and processing conditions. The utilization of a solution-processed high-κ Al2O3 insulating layer could generate a coherent dielectric/semiconductor interface, hence further improving the device performance. TFT devices with an average field-effect mobility of 96.4 cm(2) V(-1) s(-1), a current on/off ratio of 2.2 × 10(6), a threshold voltage of 1.72 V, and a subthreshold swing of 0.26 V dec(-1) have been achieved, and the driving capability is demonstrated by implementing a single SnO2 TFT device to tune the brightness of an organic light-emitting diode. It is worth noting that these TFTs work in enhancement mode at low voltages less than 4 V, which sheds light on their potential application to the next-generation low-cost active matrix flat panel displays.

  2. Helium Plasma Damage of Low-k Carbon Doped Silica Film: the Effect of Si Dangling Bonds on the Dielectric Constant

    Institute of Scientific and Technical Information of China (English)

    LI Hailing; WANG Qing; BA Dechun

    2014-01-01

    The low-k carbon doped silica film has been modified by radio frequency helium plasma at 5 Pa pressure and 80 W power with subsequent XPS,FTIR and optical emission spectroscopy analysis.XPS data indicate that helium ions have broken Si-C bonds,leading to Si-C scission with C(1s) lost seriously.The Si(2p),O(1s),peak obviously shifted to higher binding energies,indicating an increasingly oxidized Si(2p).FTIR data also show that the silanol formation increased with longer exposure time up to a week.Contrarily,the CH3 stretch,Si-C stretching bond and the ratio of the Si-O-Si cage and Si-O-Si network peak sharply decreased upon exposure to helium plasma.The OES result indicates that monovalent helium ions in plasma play a key role in damaging carbon doped silica film.So it can be concluded that the monovalent helium ions besides VUV photons can break the weak Si-C bonds to create Si dangling bonds and free methyl radicals,and the latter easily reacts with O2 from the atmosphere to generate CO2 and H2O.The bonds change is due to the Si dangling bonds combining with H2O,thereby,increasing the dielectric constant k value.

  3. Scaling of flat band potential and dielectric constant as a function of Ta concentration in Ta-TiO2 epitaxial films

    Directory of Open Access Journals (Sweden)

    Y. L. Zhao

    2011-06-01

    Full Text Available Electrochemical impedance spectroscopy measurements of pulsed laser deposited single crystal anatase TiO2 thin films with various concentrations of Ta substituting for Ti were carried out. The qualities of the films were characterized by X-ray diffraction and Rutherford back scattering-channeling measurements. UV-visible measurements show a systematic increase of the bandgap with Ta incorporation. Corresponding Mott-Schottky plot was applied to obtain a continuous shift of the flat band potential with increasing free charge carrier (provided by Ta concentration. This was verified theoretically by ab initio calculation which shows that extra Ta d-electrons occupy Ti t2g orbital with increasing Ta concentration, thereby pushing up the Fermi level. The Mott-Schottky results were consistent when compared with Hall effect and temperature dependent resistivity measurements. From the measured deviation of carrier densities from Hall and Mott-Schottky measurements we have estimated the static dielectric constant of the TiO2 as a function of Ta incorporation, not possible from capacitive measurements.

  4. Dielectric functions and carrier concentrations of Hg{sub 1−x}Cd{sub x}Se films determined by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Lee, A. J.; Peiris, F. C., E-mail: peirisf@kenyon.edu [Department of Physics, Kenyon College, Gambier, Ohio 43022 (United States); Brill, G.; Doyle, K. [U.S. Army Research Laboratory, Adelphi, Maryland 20783-1197 (United States); Myers, T. H. [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

    2015-08-17

    Spectroscopic ellipsometry, ranging from 35 meV to 6 eV, was used to determine the dielectric functions of a series of molecular beam epitaxy-grown Hg{sub 1−x}Cd{sub x}Se thin films deposited on both ZnTe/Si(112) and GaSb(112) substrates. The fundamental band gap as well as two higher-order electronic transitions blue-shift with increasing Cd composition in Hg{sub 1−x}Cd{sub x}Se, as expected. Representing the free carrier absorption with a Drude oscillator, we found that the effective masses of Hg{sub 1−x}Cd{sub x}Se (grown on ZnTe/Si) vary between 0.028 and 0.050 times the free electron mass, calculated using the values of carrier concentration and the mobility obtained through Hall measurements. Using these effective masses, we determined the carrier concentrations of Hg{sub 1−x}Cd{sub x}Se samples grown on GaSb, which is of significance as films grown on such doped-substrates posit ambiguous results when measured by conventional Hall experiments. These models can serve as a basis for monitoring Cd-composition during sample growth through in-situ spectroscopic ellipsometry.

  5. Broadband dielectric characterization of sapphire/TiOx/Ba₀.₃Sr₀.₇TiO₃ (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

    Science.gov (United States)

    Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami

    2013-05-01

    A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

  6. Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd{sub 2}O{sub 3} as gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gogoi, P., E-mail: paragjyoti_g@rediffmail.com [Sibsagar College, Material Science Laboratory, Department of Physics (India)

    2013-03-15

    The performance of thermally deposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical method. High dielectric constant rare earth oxide Nd{sub 2}O{sub 3} has been used as gate insulator. The thin film trasistors are fabricated in coplanar electrode structure on ultrasonically cleaned glass substrates with a channel length of 50 {mu}m. The thin film transistors exhibit a high mobility of 4.3 cm{sup 2} V{sup -1} s{sup -1} and low threshold voltage of 1 V. The ON-OFF ratio of the thin film transistors is found as 10{sup 5}. The TFTs also exhibit good transconductance and gain band-width product of 1.15 Multiplication-Sign 10{sup -3} mho and 71 kHz respectively.

  7. Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

    Science.gov (United States)

    Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

    2016-10-01

    Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

  8. Dielectric properties of (110) oriented PbZrO3 and La-modified PbZrO3 thin films grown by sol-gel process on Pt(111)/Ti /SiO2/Si substrate

    Science.gov (United States)

    Parui, Jayanta; Krupanidhi, S. B.

    2006-08-01

    Highly (110) preferred orientated antiferroelectric PbZrO3 (PZ) and La-modified PZ thin films have been fabricated on Pt /Ti/SiO2/Si substrates using sol-gel process. Dielectric properties, electric field induced ferroelectric polarization, and the temperature dependence of the dielectric response have been explored as a function of composition. The Tc has been observed to decrease by ˜ 17°C per 1mol% of La doping. Double hysteresis loops were seen with zero remnant polarization and with coercive fields in between 176 and 193kV/cm at 80°C for antiferroelectric to ferroelectric phase transformation. These slim loops have been explained by the high orientation of the films along the polar direction of the antiparallel dipoles of a tetragonal primitive cell and by the strong electrostatic interaction between La ions and oxygen ions in an ABO3 perovskite unit cell. High quality films exhibited very low loss factor less than 0.015 at room temperature and pure PZ; 1 and 2mol% La doped PZs have shown the room temperature dielectric constant of 135, 219, and 142 at the frequency of 10kHz. The passive layer effects in these films have been explained by Curie constants and Curie temperatures. The ac conductivity and the corresponding Arrhenius plots have been shown and explained in terms of doping effect and electrode resistance.

  9. Amorphous indium-gallium-zinc-oxide thin-film transistors using organic-inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

    Science.gov (United States)

    Hsu, Chao-Jui; Chang, Ching-Hsiang; Chang, Kuei-Ming; Wu, Chung-Chih

    2017-01-01

    We investigated the deposition of high-performance organic-inorganic hybrid dielectric films by low-temperature (close to room temperature) inductively coupled plasma chemical vapor deposition (ICP-CVD) with hexamethyldisiloxane (HMDSO)/O2 precursor gas. The hybrid films exhibited low leakage currents and high breakdown fields, suitable for thin-film transistor (TFT) applications. They were successfully integrated into the gate insulator, the etch-stop layer, and the passivation layer for bottom-gate staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs having the etch-stop configuration. With the double-active-layer configuration having a buffer a-IGZO back-channel layer grown in oxygen-rich atmosphere for better immunity against plasma damage, the etch-stop-type bottom-gate staggered a-IGZO TFTs with good TFT characteristics were successfully demonstrated. The TFTs showed good field-effect mobility (μFE), threshold voltage (V th), subthreshold swing (SS), and on/off ratio (I on/off) of 7.5 cm2 V-1 s-1, 2.38 V, 0.38 V/decade, and 2.2 × 108, respectively, manifesting their usefulness for a-IGZO TFTs.

  10. Conduction mechanism and dielectric properties of a Se{sub 80}Ge{sub 20-x}Cd{sub x} (x = 0, 6 and 12 at.wt%) films

    Energy Technology Data Exchange (ETDEWEB)

    Shakra, A.M.; Farid, A.S.; Hegab, N.A.; Afifi, M.A. [Ain Shams University, Physics Department, Semiconductor Lab, Faculty of Education, Cairo (Egypt); Alrebati, A.M. [Taiz University, Physics Department, Faculty of Education, Taiz (Yemen)

    2016-09-15

    AC conductivity and dielectric properties of Se{sub 80}Ge{sub 20-x}Cd{sub x} (0 ≤ x ≤ 12 at.wt%) in thin film forms are reported in this paper. Thin films were deposited from the prepared compositions by thermal evaporation technique at 10{sup -5} Torr. The films were well characterized by X-ray diffraction, differential thermal analysis and energy-dispersive X-ray spectroscopy. The AC conductivity and dielectric properties have been investigated for the studied films in the temperature range 293-393 K and over a frequency range of 10{sup 2}-10{sup 5} Hz. The experimental results indicate that both AC conductivity σ {sub AC}(ω) and dielectric constants depend on temperature, frequency and Cd content. The frequency exponent s was calculated, and its value lies very close to unity and is temperature independent. This behavior can be explained in terms of the correlated barrier hopping between centers forming intimate valence alternation pairs. The density of localized states N(E{sub F}) at the Fermi level is estimated. The activation energy ΔE(ω) was found to decrease with increasing frequency. The maximum barrier height W{sub m} for the studied films was calculated from an analysis of the dielectric loss ε{sub 2} according to the Guintini equation. Its values agree with that proposed by the theory of hopping of charge carriers over potential barrier as suggested by Elliott for chalcogenide glasses. The variation of the studied properties with Cd content was also investigated. (orig.)

  11. Substantial reduction of the dielectric losses of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films using a SiO{sub 2} barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Reymond, V; Michau, D; Payan, S; Maglione, M [Institute of Condensed Matter Chemistry of Bordeaux, University of Bordeaux 1, ICMCB-CNRS, 87 Avenue Dr A Schweitzer, 33608 Pessac (France)

    2004-12-22

    The efficient use of ferroelectric thin films in radio-frequency agile devices faces several limitations. One of them is imposed by the dielectric losses which are usually above 1%, i.e. above the threshold as set by the electronic industry. Following the same route as for bulk ceramics, we have processed composite stacks made of BST/SiO{sub 2} multilayers using radio-frequency magnetron sputtering. Doing so, we were able to repeatedly achieve dielectric losses well below 0.5% while keeping a high dielectric susceptibility and a suitable tunability. All of these improvements have been observed at low frequencies (f<10 MHz) and the transfer to the targeted frequency range (f>1 GHz) is currently in progress.

  12. Dielectric and electromechanical properties of Pb(Mg1/3,Nb2/3)O3-PbTiO3 thin films grown by pulsed laser deposition

    Science.gov (United States)

    Donnelly, N. J.; Catalan, G.; Morros, C.; Bowman, R. M.; Gregg, J. M.

    2003-06-01

    Pulsed laser deposition was used to grow thin films of several compositions from the Pb(Mg1/3,Nb2/3)O3-PbTiO3 (PMN-PT) solid solution as dielectric layers in thin film capacitor structures. They were found to display functional behavior characteristic of relaxors, with the only significant difference between thin film and bulk being a severely reduced dielectric permittivity. Room temperature polarization loops showed a general increase in both the remanent polarization and absolute magnitude of the polarization for a given field with PT content. The electric field-induced strain was primarily examined by in situ x-ray diffraction and although fields greater than 20 MV m-1 were applied to the films, the maximum observed strain was only ˜0.3%, considerably less than the 1.4% seen in single crystal samples. Piezo-response atomic force microscopy studies were consistent in that the macroscopic effective piezoelectric coefficient d33, was found to differ from single crystal measurements by an order of magnitude. However, electrostrictive coefficients (Q33), were found to be comparable to published values for both PMN-PT single crystals and ceramics, ranging between 1 and 9×10-2 C-4 cm2. Consequently, it seems that the relatively poor strain response in these thin films is intimately linked to the reduced permittivity and not to a fundamental difference in the electrostrictive coefficients between bulk and thin film.

  13. Insulation Improvement of Screen-Printed Dielectric Films by Double-Sintering%基于印刷工艺的介质层绝缘特性研究

    Institute of Scientific and Technical Information of China (English)

    林贺; 叶芸; 肖晓晶; 杨帆; 陆培民; 郭太良

    2012-01-01

    The dielectric films,to be used in fabrication of field emission display, were deposited by screen printing on glass substrates. The impacts of sample preparation, including the sintering conditions,numbers of screen-printing and sintering times,and film thickness,on its insulation property was studied.Trie microstructures of the films were characterized with scanning electron microscopy and conventional surface probes. The results show that the repeated sintering significantly improves the insulation property.For instance,when films were sintered twice in two different stages,the breakdown voltage of a 34 fim thick films was found to be 421 V, accompanied by negligible leakage current. When it comes to the conduction mechanisms,in a low field,Ohm's law works;whereas in a high field,Schottky emission dominates.%绝缘介质层是三极场致发射显示器的重要组成部分,本文通过丝网印刷技术与一次烧结和重复烧结两种烧结工艺制备不同膜厚的介质层,利用台阶仪和扫描电子显微镜分别对介质层膜厚和形貌进行表征,并对介质层的绝缘耐压性能进行了测试.结果表明,在重复烧结工艺下制备的膜厚约为34μm的介质层的耐压特性较好,电场强度达0.15 MV/cm,可耐压421 V,漏电流小,且重复性好,基本上可以满足后栅型FED栅极调控电压对介质层耐压性能的要求.同时在电场较弱时,介质层漏电流的输运符合欧姆输运机制;随着电场的升高,介质层漏电流的输运以Schottky发射机制为主,Frenkel-Poole发射机制对漏电流的影响很小.

  14. Dielectric properties of BaMg1/3Nb2/3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

    Science.gov (United States)

    Alema, Fikadu; Pokhodnya, Konstantin

    2015-11-01

    Ba(Mg1/3Nb2/3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO2/SiO2/Al2O3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy, resulting in an improved insulating properties of the BST film. Dielectric tunability, loss, and leakage current (LC) of the undoped and BMN doped BST thin films were studied. The BMN dopant has remarkably reduced the dielectric loss (˜38%) with no significant effect on the tunability of the BST film, leading to an increase in figure of merit (FOM). This is attributed to the opposing behavior of large Mg2+ whose detrimental effect on tunability is partially compensated by small Nb5+ as the two substitute Ti4+ in the BST. The coupling between MgTi″ and VO•• charged defects suppresses the dielectric loss in the film by cutting electrons from hopping between Ti ions. The LC of the films was investigated in the temperature range of 300-450K. A reduced LC measured for the BMN doped BST film was correlated to the formation of defect dipoles from MgTi″, VO•• and NbTi• charged defects. The carrier transport properties of the films were analyzed in light of Schottky thermionic emission (SE) and Poole-Frenkel (PF) emission mechanisms. The result indicated that while the carrier transport mechanism in the undoped film is interface limited (SE), the conduction in the BMN doped film was dominated by bulk processes (PF). The change of the conduction mechanism from SE to PF as a result of BMN doping is attributed to the presence of uncoupled NbTi• sitting as a positive trap center at the shallow donor level of the BST.

  15. Effect of geometric size on mechanical properties of dielectric elastomers based on an improved visco-hyperelastic film model

    Science.gov (United States)

    Chang, Mengzhou; Wang, Zhenqing; Tong, Liyong; Liang, Wenyan

    2017-03-01

    Dielectric polymers show complex mechanical behaviors with different boundary conditions, geometry size and pre-stress. A viscoelastic model suitable for inhomogeneous deformation is presented integrating the Kelvin-Voigt model in a new form in this work. For different types of uniaxial tensile test loading along the length direction of sample, single-step-relaxation tests, loading–unloading tests and tensile–creep–relaxation tests the improved model provides a quite favorable comparison with the experiment results. Moreover, The mechanical properties of test sample with several length–width ratios under different boundary conditions are also invested. The influences of the different boundary conditions are calculated with a stress applied on the boundary point and the result show that the fixed boundary will increase the stress compare with homogeneous deformation. In modeling the effect of pre-stress in the shear test, three pre-stressed mode are discussed. The model validation on the general mechanical behavior shows excellent predictive capability.

  16. Effect of Deposition Rate on Structure and Surface Morphology of Thin Evaporated Al Films on Dielectrics and Semiconductors

    DEFF Research Database (Denmark)

    Bordo, K.; Rubahn, H. G.

    2012-01-01

    Aluminum (Al) films with thickness of 100 nm were grown on unheated glass, silicon and mica substrates by electron beam evaporation. The deposition rates were adjusted in the range between 0.1 nm/s and 2 nm/s, the pressure in the vacuum chamber during deposition was lower than 1.10(-3) Pa...

  17. Effect of Deposition Rate on Structure and Surface Morphology of Thin Evaporated Al Films on Dielectrics and Semiconductors

    Directory of Open Access Journals (Sweden)

    Kirill BORDO

    2012-12-01

    Full Text Available Aluminum (Al films with thickness of 100 nm were grown on unheated glass, silicon and mica substrates by electron beam evaporation. The deposition rates were adjusted in the range between 0.1 nm/s and 2 nm/s, the pressure in the vac­uum chamber during deposition was lower than 1·10–3 Pa. The structure and surface morphology of the as-deposited Al films were studied using scanning electron microscopy (SEM and atomic force microscopy (AFM. SEM imaging of the films showed that the mean grain size of thin Al films on all of the substrates increased from 20 nm – 30 nm to 50 nm – 70 nm with increase of the deposition rate. Quantitative AFM characterization showed that for all substrates the root mean square surface roughness increases monotonically with increasing the deposition rate from 0.1 nm/s to 2 nm/s. The observed effects of the deposition rate on the grain size and surface roughness are explained by the fundamental characteristics of the island growth mode, the influence of the background gases and the surface morphology of the bare substrates.DOI: http://dx.doi.org/10.5755/j01.ms.18.4.3088

  18. Levy's distributions for statistical description of fractal structures; discontinuous metal films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dobierzewska-Mozrzymas, E.; Szymczak, G.; Bieganski, P.; Pieciul, E

    2003-09-01

    The ranges of statistical description of the systems may be determined on the basis of the inverse power law of the Mandelbrot. The slope of the straight line representing the power law in a double-logarithmic plot, determined as -1/{mu} ({mu} being a critical exponent), characterizes the distribution of elements in the system. In this paper, the inverse power law is used to describe the statistical distribution of discontinuous metal films with higher coverage coefficients (near percolation threshold). For these films the critical exponent {mu}{approx}1, both the mean value and the variance are infinite. The objects with such microstructure are described according to the Levy distribution; Cauchy, inverse Gauss and inverse gamma distribution, respectively. The experimental histograms are compared with the calculated ones. Inhomogeneous metal films were obtained experimentally, their microstructures were examined by means of electron microscope. On the basis of electron micrographs, the fractal dimensions were determined for the metal films with coverage coefficient ranging from 0.35 to 1.00.

  19. Structural and dielectric properties of Ba(X{sub 1/3}Ta{sub 2/3})O{sub 3} thin films grown by RF-PLD

    Energy Technology Data Exchange (ETDEWEB)

    Nedelcu, L., E-mail: nedelcu@infim.ro [National Institute of Materials Physics, 077125 Bucharest-Magurele (Romania); Scarisoreanu, N.D. [National Institute for Laser, Plasma and Radiation Physics, 077125 Bucharest-Magurele (Romania); Chirila, C. [National Institute of Materials Physics, 077125 Bucharest-Magurele (Romania); Busuioc, C. [National Institute of Materials Physics, 077125 Bucharest-Magurele (Romania); University “Politehnica” of Bucharest, 011061 Bucharest (Romania); Banciu, M.G. [National Institute of Materials Physics, 077125 Bucharest-Magurele (Romania); Jinga, S.I. [University “Politehnica” of Bucharest, 011061 Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, 077125 Bucharest-Magurele (Romania)

    2013-08-01

    Ba(X{sub 1/3}Ta{sub 2/3})O{sub 3} (X = Mg, Zn) thin films were grown on commercial Pt-coated Si substrates by radiofrequency plasma beam assisted pulsed laser deposition (RF-PLD) method. Single phase Ba(Mg{sub 1/3}Ta{sub 2/3})O{sub 3} and Ba(Zn{sub 1/3}Ta{sub 2/3})O{sub 3} ceramic targets having an ordered hexagonal structure (with P3{sup ¯}m1 space group) were used for deposition. Structural, morphological and surface characterizations of the Ba(X{sub 1/3}Ta{sub 2/3})O{sub 3} (BXT) films were performed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray diffraction studies evidenced a cubic (disordered) perovskite structure, with unit cell typical for Pm3m space group. Scanning electron microscopy investigations showed that BXT films have a columnar microstructure, which is oriented perpendicular to the substrate. The temperature dependence of the dielectric permittivity of the films was recorded at 100 kHz. Unlike targets, the BXT films exhibit positive values of the temperature coefficient of the dielectric permittivity. BaMg{sub 1/3}Ta{sub 2/3}O{sub 3} and BaZn{sub 1/3}Ta{sub 2/3}O{sub 3} thin films with dielectric constant of about 22.5 and 25, respectively have been obtained.

  20. Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO2 as a gate dielectric

    Indian Academy of Sciences (India)

    S K Nandi; S Chakraborty; M K Bera; C K Maiti

    2007-06-01

    Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscattering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectroscopy (XPS). ZrO2 thin films have been deposited on ZnO using microwave plasma enhanced chemical vapour deposition at a low temperature (150°C). Using metal insulator semiconductor (MIS) capacitor structures, the reliability and the leakage current characteristics of ZrO2 films have been studied both at room and high temperatures. Schottky conduction mechanism is found to dominate the current conduction at a high temperature. Good electrical and reliability properties suggest the suitability of deposited ZrO2 thin films as an alternative as gate dielectric on ZnO/-Si heterostructure for future device applications.

  1. Effect of LaNiO3 Interlayer on the Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Film on Si Substrate

    Institute of Scientific and Technical Information of China (English)

    ZHANG Cong-chun; YANG Chun-sheng; SHI Jin-chuan; RAO Rui

    2009-01-01

    In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(lll)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness.

  2. Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

    Science.gov (United States)

    Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

    2016-05-01

    BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ chemical pressure and epitaxial strain on the appearance of nanoscale stripe structure which creates conditions for easy reorientation and high dielectric response, and could be of more general relevance for the field of materials science where engineered materials with huge response to external stimuli are a highly priced target.

  3. Interpretation of transmission through type II superconducting thin film on dielectric substrate as observed by laser thermal spectroscopy

    Science.gov (United States)

    Šindler, M.; Tesař, R.; Koláček, J.; Skrbek, L.

    2012-12-01

    We provide a thorough analysis of THz properties of BCS-like superconducting thin films. Temperature and frequency dependence of complex conductivity in zero magnetic field is discussed by utilizing the Zimmerman et al. explicit BCS based formula [Physica C 183 (1991) 99]. We extend this approach by employing the effective medium theory and develop a phenomenological model capable of accounting for the influence of external magnetic field. Using Yeh powerful formalism [Surface Sci. 96 (1980) 41] we calculate optical transmission of linearly polarized laser beam normally incident to a multilayered sample consisting of a thin NbN film grown on birefringent sapphire substrate, entirely covering ranges of interest in temperature and frequency. A proposal to exploit linear polarization of the incident beam parallel with principal axes of conductivity tensor is explained and theoretical predictions for a realistic NbN sample are computed and discussed.

  4. Epitaxial growth and dielectric properties of Bi sub 2 VO sub 5 sub . sub 5 thin films on TiN/Si substrates with SrTiO sub 3 buffer layers

    CERN Document Server

    Lee, H Y; Choi, B C; Jeong, J H; Joseph, M; Tabata, H; Kawai, T

    2000-01-01

    Bi sub 2 VO sub 5 sub . sub 5 (BVO) thin films were epitaxially grown on SrTiO sub 3 /TiN/Si substrates by using pulsed laser ablation. A TiN thin film was prepared at 700 .deg. C as a bottom electrode. The TiN film exhibited a high alpha axis orientation and a very smooth morphology. Before the preparation of the BVO thin film, a crystallized SrTiO sub 3 thin film was deposited as a buffer layer on TiN/Si. The BVO thin film grown at a substrate temperature at 700 .deg. C and an oxygen pressure of 50 mTorr was found to be epitaxial along the c-axis. Also, BVO films were observed to have flat surfaces and the step-flow modes. The dielectric constant of the BVO film on STO/TiN/Si was constant at about 8 approx 4 in the applied frequency range between 10 sup 2 and 10 sup 6 Hz.

  5. Dielectric Metamaterials

    Science.gov (United States)

    2015-05-29

    Final Report  29 May 2015 Dielectric Metamaterials SRI Project P21340 ONR Contract N00014-12-1-0722 Prepared by: Srini Krishnamurthy...2 2. Theory of Metamaterials ....................................................................................................... 2 2.1...accurately assess the impact of various forms of disorder on metamaterials (MMs) (both dielectric and metal inclusions); and (5) identify designs

  6. 退火对P(VDF-HFP)共聚物薄膜结构和介电性能的影响%Effects of annealing on the structure and the dielectric property of vinylidene fluoride-hexafluoropropylene copolymer films

    Institute of Scientific and Technical Information of China (English)

    孟竺; 叶会见; 卢铁梅; 王海平; 徐立新

    2016-01-01

    设法提高电介质材料的介电性能和击穿特性,进而改善PVDF基的电介质脉冲电容器储能性能,对于促进其在军事和民用领域的应用具有重要意义。偏氟乙烯-六氟丙烯共聚物(P(VDF-HFP))是一类综合性能优良的电介质材料。为了进一步提高其介电性能,文章首先通过溶液流延法制得P(VDF-HFP)薄膜,在不同温度和时间下对其进行退火处理,以考察后处理对P(VDF-HFP)晶体结构及介电性能的影响。采用X射线衍射(XRD)、傅里叶变换红外光谱(FTIR)和示差扫描量热分析(DSC)对样品的晶体结构、结晶度和电活性β相含量进行表征,并对薄膜的介电性能进行测试。结果表明,退火处理可有效提高P(VDF-HFP)共聚物的β相含量,在120℃下退火12 h,体系的β相含量可高达92.1%,对应的介电常数可达15.3(100 Hz),较原始薄膜提高45%,同时样品介电损耗可降至0.019。%It is of significant importance to improve the dielectric property and the electric breakdown performance of polymer dielectric materials for their successful applications in the impulse capacitors as they are related with the large energy density and the high cycle efficiency, which are desirable for applications in various military and civil domains. As a type of polymer dielectric materials, the vinylidene fluoride-hexafluoropropylene copolymer (P(VDF-HFP)) enjoys excellent comprehensive properties. However, its dielectric property remains to be improved. In this paper, the P(VDF-HFP) films are first made through a solution-casting process, and then isothermally annealed under serially changing temperatures and times. The crystal form, the crystallinity and theβ-phase content of the resulting films are characterized with the X-ray diffraction (XRD), the Fourier transformed infrared (FTIR) spectroscopy and the differential scanning calorimetry (DSC), respectively, and the dielectric properties of

  7. Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity

    Science.gov (United States)

    Sun, J.; Zheng, X. J.; Yin, W.; Tang, M. H.; Li, W.

    2010-12-01

    Distinguishing from the traditional characterization on high-field leakage current density-voltage relationship, the field-dependent permittivity from the polarization derivative is used to solve the space-charge-limited conduction, and the simulated leakage current densities are compared with the previous experimental observations. The influences of the mobility, ferroelectric parameters, and film thickness on the leakage current densities are discussed. The results verify that the high-field quasi-Ohmic region observed experimentally may result from the field-dependent permittivity, and that the leakage current can be influenced by the ferroelectric polarization.

  8. Synthesis of graphene-like transparent conductive films on dielectric substrates using a modified filtered vacuum arc system

    Energy Technology Data Exchange (ETDEWEB)

    Lux, Helge, E-mail: lux@th-wildau.de; Schrader, Sigurd [Technical University of Applied Sciences Wildau, Hochschulring 1, Wildau 15745 (Germany); Siemroth, Peter [Arc Precision GmbH, Schwartzkopffstraße 2, Wildau 15745 (Germany); Sgarlata, Anna [Department of Physics, University of Roma - Tor Vergata, Via della Ricerca Scientifica 1, Roma 00133 (Italy); Prosposito, Paolo; Casalboni, Mauro [Department of Industrial Engineering, University of Roma - Tor Vergata, and Italian Interuniversity Consortium on Materials Science and Technology (INSTM), Research Unit Roma Tor Vergata Via del Politecnico 1, Roma 00133 (Italy); Schubert, Markus Andreas [IHP Innovations for High Performance Microelectronics, Im Technologiepark 25, Frankfurt (Oder) 15236 (Germany)

    2015-05-21

    Here, we present a reliable process to deposit transparent conductive films on silicon oxide, quartz, and sapphire using a solid carbon source. This layer consists of partially ordered graphene flakes with a lateral dimension of about 5 nm. The process does not require any catalytic metal and exploits a high current arc evaporation (Φ-HCA) to homogeneously deposit a layer of carbon on heated substrates. A gas atmosphere consisting of Argon or Argon/Hydrogen blend acting as a buffer influences the morphology of the growing film. scanning tunneling microscopy, transmission electron microscopy, and Raman spectra were used for a thorough characterization of the samples in order to optimize the growth parameters. The best carbon layers have a surface resistance of 5.7 × 10{sup 3} Ω{sub ◻} whereas the optical transparency of the coatings is 88% with an excellent homogeneity over areas of several cm{sup 2}. Such results are compatible with most semiconductor fabrication processes and make this method very promising for various industrial applications.

  9. Synthesis, spectral, thermal, optical dispersion and dielectric properties of nanocrystalline dimer complex (PEPyr–diCd) thin films as novel organic semiconductor

    Indian Academy of Sciences (India)

    Ahmed Farouk Al-Hossainy

    2016-02-01

    Dimer complex PEPyr–diCd (5a) has been prepared by reacting CdCl$_2$·2.5H$_2$O with 1,1$'$-bis(diphenylphosphino)ethyl-6-methyl-3-(pyridin-2-yl)-1,4-dihydro-pyridazine tungsten tetracarbonyl PEPyr (4a) as bipyridine ligand. The structural properties of PEPyr–diCd complex were characterized on the basis of elemental analysis (EA), Fourier transform infrared spectra, fast atom bombardment-mass spectrometry, thermogravimetric/ differential thermal analysis, and 1H nuclear magnetic resonance spectroscopy. The crystal is orthorhombic, space group Pbca. Cd(II) metal in PEPyr–diCd organic semiconductor complex coordinated with two N of the PEPyr and three Cl$^−$ (one terminal and two bridging). The micro-structural properties of the films were studied via X-ray diffraction, and scanning electron microscopy. The as-deposited films were annealed in air for 1 h at 150, 200, and 250°C. An average transmittance >70% for PEPyr–diCd complex at higher wavelength >800 nm was observed.In UV spectrum, the transmittance increases followed by a sharp decrease at wavelength 700–750 nm within visible range. The results of the absorption coefficient were determined to find the binding energy (EB) of PEPyr–diCd organic semiconductor complex as 0.242 and 0.47 eV, respectively. Refractive index () and absorption index () of PEPyr–diCd complex were calculated. Moreover, the dispersion parameters such as dispersion energy, oscillator energy, dielectric constant, and dissipation factor were determined. The oxidation of the imino-phosphine derivatives were examined using cyclic voltammetry in methylene chloride solvent. The cyclic voltammogram of PEPyr–diCd (5a) organic semiconductor appears to have two quasi-reversible oxidations at 543 and 441 mV. The obtained results indicate that the PEPyr–diCd organic semiconductor thin film is a good candidate in optoelectronic devices based on its band gap and dispersion parameters.

  10. Preparation and Properties of TiC/PI Composite Films with High Dielectric Constant%碳化钛/聚酰亚胺高介电复合薄膜的制备及性能研究

    Institute of Scientific and Technical Information of China (English)

    翁凌; 闫利文; 景伟; 龚忠良

    2012-01-01

    采用机械共混法将经硅烷偶联剂改性的碳化钛粉体掺杂入聚酰亚胺中,制备了碳化钛/聚酰亚胺复合薄膜.分析了不同碳化钛粒子含量对复合薄膜的显微结构、力学性能及介电性能的影响.实验结果表明,随着纳米TiC含量的不断升高,复合薄膜的拉伸强度呈现先上升后下降的趋势,复合薄膜的耐电击穿场强迅速下降.与此同时,复合材料的介电常数则显著提高.%A series of TiC/PI composite films were prepared by mechanical dispersion method. Modifier silicon coupling agent (DB550) was added during composite preparation to disperse the TiC particles in polyimide matrix. The effects of TiC contents on the micro -morphology, mechanical and electrical properties of PI composite films were investigated. The results indicated that the addition of TiC panicles had a great effect on the properties of PI composite films. With the increase in volume content of TiC, the tensile strength of the composite films increased firstly to as high as 137MPa, when TiC content was 10%, then it decreased with the further increasing of TiC content. However, the resistance field electric breakdown of composite film was falling with the increase of TiC contents. The analysis results of dielectric performance showed that the dielectric properties of the composite films were much better than that of the pure film.

  11. Dielectric functions and energy band gap variation studies of manganese doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} thin films using spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Gautam, Prikshit, E-mail: pgautam.phy.du@gmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Department of Physics Kirori Mal College, University of Delhi, Delhi 110007 (India); Sachdeva, Anupama [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India); Singh, Sushil K. [Functional Materials Division, SSPL, Timarpur, New Delhi 110054 (India); Tandon, R.P., E-mail: ram_tandon@hotmail.com [Department of Physics and Astrophysics, University of Delhi (DU), Delhi 110007 (India)

    2014-12-25

    Highlights: • Mn Doped Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films prepared by chemical solution deposition technique. • Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. • The optical properties of BLT and Mn modified BLT thin films were investigated by using spectroscopic ellipsometry. • A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions. • The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content. - Abstract: Single phase polycrystalline Mn-modified Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) thin films were prepared by chemical solution deposition method using spin coating technique on Pt/Ti/SiO{sub 2}/Si (1 0 0) substrates. Raman spectroscopy of these films shows that Mn{sup 3+} is well substituted at Ti{sup 4+} site. The optical properties of BLT and Mn modified BLT thin films were investigated at room temperature by using spectroscopic ellipsometry (SE) in the energy range 0.72–6.2 eV. A double Tauc–Lorentz (DTL) dispersion relation was successfully used to model the dielectric functions of these films where a shift to the lower energy side with Mn doping is seen. The full width at half maxima (FWHM) (Γ) of dielectric function is found to increase with Mn doping. This increase in FWHM may be attributed to the increase in the trap density in forbidden band which consequently decreases the value of direct optical band gap (Eg{sup d}). The direct optical band gap (Eg{sup d}) is found to decrease with increase in Mn content in the studied composition range. This decrease in Eg{sup d} with doping may be attributed to the variation in the defect concentration present in the structure.