WorldWideScience

Sample records for hfo2 films atomic

  1. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  2. Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

    Science.gov (United States)

    Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

    2017-12-01

    Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

  3. Solid phase crystallisation of HfO2 thin films

    International Nuclear Information System (INIS)

    Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

    2005-01-01

    In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

  4. Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

    Science.gov (United States)

    Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

    2016-08-17

    Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

  5. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-01-01

    Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

  6. Structural, morphological, optical and photoluminescence properties of HfO2 thin films

    International Nuclear Information System (INIS)

    Ma, C.Y.; Wang, W.J.; Wang, J.; Miao, C.Y.; Li, S.L.; Zhang, Q.Y.

    2013-01-01

    Nanocrystalline monoclinic HfO 2 films with an average crystal size of 4.2–14.8 nm were sputter deposited under controlled temperatures and their structural characteristics and optical and photoluminescence properties have been evaluated. Structural investigations indicate that monoclinic HfO 2 films grown at higher temperatures above 400 °C are highly oriented along the (− 111) direction. The lattice expansion increases with diminishing HfO 2 crystalline size below 6.8 nm while maximum lattice expansion occurs with highly oriented monoclinic HfO 2 of crystalline size about 14.8 nm. The analysis of atomic force microscopy shows that the film growth at 600 °C can be attributed to the surface-diffusion-dominated growth. The intensity of the shoulderlike band that initiates at ∼ 5.7 eV and saturates at 5.94 eV shows continued increase with increasing crystalline size, which is intrinsic to nanocrystalline monoclinic HfO 2 films. Optical band gap varies in the range 5.40 ± 0.03–5.60 ± 0.03 eV and is slightly decreased with the increase in crystalline size. The luminescence band at 4.0 eV of HfO 2 films grown at room temperature can be ascribed to the vibronic transition of excited OH · radical while the emission at 3.2–3.3 eV for the films grown at all temperatures was attributed to the radiative recombination at impurity and/or defect centers. - Highlights: • Nanocrystalline monoclinic HfO 2 films were sputter deposited. • Structural, optical and photoluminescence properties were studied. • To analyze the scaling behavior using the power spectral density • Optical and photoluminescence properties strongly depend on film growth temperature

  7. Improvement in negative bias illumination stress stability of In-Ga-Zn-O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions

    Science.gov (United States)

    Na, So-Yeong; Kim, Yeo-Myeong; Yoon, Da-Jeong; Yoon, Sung-Min

    2017-12-01

    The effects of atomic layer deposition (ALD) conditions for the HfO2 gate insulators (GI) on the device characteristics of the InGaZnO (IGZO) thin film transistors (TFTs) were investigated when the ALD temperature and Hf precursor purge time were varied to 200, 225, and 250 °C, and 15 and 30 s, respectively. The HfO2 thin films showed low leakage current density of 10-8 A cm-2, high dielectric constant of over 20, and smooth surface roughness at all ALD conditions. The IGZO TFTs using the HfO2 GIs showed good device characteristics such as a saturation mobility as high as 11 cm2 V-1 s-1, a subthreshold swing as low as 0.10 V/dec, and all the devices could be operated at a gate voltage as low as  ±3 V. While there were no marked differences in transfer characteristics and PBS stabilities among the fabricated devices, the NBIS instabilities could be improved by increasing the ALD temperature for the formation of HfO2 GIs by reducing the oxygen vacancies within the IGZO channel.

  8. Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

    Science.gov (United States)

    K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

    2011-01-01

    Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

  9. Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Yong-Qing; Chang, Chia-Wei; Yao, Chih-Kai; Liao, Jiunn-Der

    2013-01-01

    10-nm-thick atomic layer deposited HfO 2 films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi x O y induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi x O y with increasing annealing temperatures. The existence of HfSi x O y broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi x O y induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO 2 films were assessed by nano-scratch and indentation. ► Scratch depth of HfO 2 films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO 2 films increased with the increase of annealing temperatures

  10. Crystal structure and band gap determination of HfO2 thin films

    NARCIS (Netherlands)

    Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

    2007-01-01

    Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

  11. Thermoluminescence in films of HfO2:Dy+3

    International Nuclear Information System (INIS)

    Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D.; Azorin, J.; Paredes, L.

    2014-08-01

    In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO 2 :Dy +3 ) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm 2 -s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm 2 ), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO 2 :Dy +3 could be used as radiation monitor in the region of the near UV. (Author)

  12. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  13. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

    Science.gov (United States)

    Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

    2014-03-26

    We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

  14. Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)

    Science.gov (United States)

    Soares, G. V.; Feijó, T. O.; Baumvol, I. J. R.; Aguzzoli, C.; Krug, C.; Radtke, C.

    2014-01-01

    In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate interface region (at 300 °C) and through the whole HfO2 layer (400-600 °C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO2 films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.

  15. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    International Nuclear Information System (INIS)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-01-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar + ion beam, we cleaned the polymer residue without damaging the graphene network. HfO 2 grown by atomic layer deposition on graphene cleaned using an Ar + ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar + ion cleaning) showed a non-uniform structure. A graphene–HfO 2 –metal capacitor fabricated by growing 20-nm thick HfO 2 on graphene exhibited a very low leakage current (<10 −11 A/cm 2 ) for Ar + ion-cleaned graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  16. Investigation of various properties of HfO2-TiO2 thin film composites deposited by multi-magnetron sputtering system

    Science.gov (United States)

    Mazur, M.; Poniedziałek, A.; Kaczmarek, D.; Wojcieszak, D.; Domaradzki, J.; Gibson, D.

    2017-11-01

    In this work the properties of hafnium dioxide (HfO2), titanium dioxide (TiO2) and mixed HfO2-TiO2 thin films with various amount of titanium addition, deposited by magnetron sputtering were described. Structural, surface, optical and mechanical properties of deposited coatings were analyzed. Based on X-ray diffraction and Raman scattering measuremets it was observed that there was a significant influence of titanium concentration in mixed TiO2-HfO2 thin films on their microstructure. Increase of Ti content in prepared mixed oxides coatings caused, e.g. a decrease of average crystallite size and amorphisation of the coatings. As-deposited hafnia and titania thin films exhibited nanocrystalline structure of monoclinic phase and mixed anatase-rutile phase for HfO2 and TiO2 thin films, respectively. Atomic force microscopy investigations showed that the surface of deposited thin films was densely packed, crack-free and composed of visible grains. Surface roughness and the value of water contact angle decreased with the increase of Ti content in mixed oxides. Results of optical studies showed that all deposited thin films were well transparent in a visible light range. The effect of the change of material composition on the cut-off wavelength, refractive index and packing density was also investigated. Performed measurements of mechanical properties revealed that hardness and Young's elastic modulus of thin films were dependent on material composition. Hardness of thin films increased with an increase of Ti content in thin films, from 4.90 GPa to 13.7 GPa for HfO2 and TiO2, respectively. The results of the scratch resistance showed that thin films with proper material composition can be used as protective coatings in optical devices.

  17. Atomic scale engineering of HfO2-based dielectrics for future DRAM applications

    International Nuclear Information System (INIS)

    Dudek, Piotr

    2011-01-01

    Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO 2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO 2 (BaHfO 3 ) films and Ti-added BaHfO 3 (BaHf 0.5 Ti 0.5 O 3 ) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO 3 (k∝38) and BaHf 0.5 Ti 0.5 O 3 (k∝90) with respect to monoclinic HfO 2 (k∝19). Meanwhile the CET values scaled down to 1 nm for BaHfO 3 and ∝0.8 nm for BaHf 0.5 Ti 0.5 O 3 with respect to HfO 2 (CET=1.5 nm). The Hf 4+ ions substitution in BaHfO 3 by Ti 4+ ions led to a significant decrease of thermal budget from 900 C for BaHfO 3 to 700 C for BaHf 0.5 Ti 0.5 O 3 . Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. (orig.)

  18. Surface modelling on heavy atom crystalline compounds: HfO2 and UO2 fluorite structures

    International Nuclear Information System (INIS)

    Evarestov, Robert; Bandura, Andrei; Blokhin, Eugeny

    2009-01-01

    The study of the bulk and surface properties of cubic (fluorite structure) HfO 2 and UO 2 was performed using the hybrid Hartree-Fock density functional theory linear combination of atomic orbitals simulations via the CRYSTAL06 computer code. The Stuttgart small-core pseudopotentials and corresponding basis sets were used for the core-valence interactions. The influence of relativistic effects on the structure and properties of the systems was studied. It was found that surface properties of Mott-Hubbard dielectric UO 2 differ from those found for other metal oxides with the closed-shell configuration of d-electrons

  19. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  20. Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

    International Nuclear Information System (INIS)

    Zhang, R.; Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S.

    2016-01-01

    We have demonstrated a low temperature formation (300 °C) of higher-k HfO 2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO x interfacial layer. It is found that the cubic phase is dominant in the HfO 2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO 2 film on a 1-nm-thick GeO x form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO 2 can be induced by the formation of six-fold crystalline GeO x structures in the underlying GeO x interfacial layer

  1. Laser conditioning effect on HfO2/SiO2 film

    International Nuclear Information System (INIS)

    Wei Yaowei; Zhang Zhe; Liu Hao; Ouyang Sheng; Zheng Yi; Tang Gengyu; Chen Songlin; Ma Ping

    2013-01-01

    Laser conditioning is one of the important methods to improve the laser damage threshold of film optics. Firstly, a large aperture laser was used to irradiate the HfO 2 /SiO 2 reflectors, which were evaporated from hafnia and silica by e-beam. Secondly, a laser calorimeter was used to test the film absorption before and after laser irradiation. Focused ion beam (FIB) was few reported using on laser film, it was used to study the damage morphology and explore the cause of damage. The shooting of the partial ejection on nodule was obtained for the first time, which provided the basis for study the damage process. The results show that film absorption was decreased obviously after the laser irradiation, laser conditioning can raise the laser damage threshold by the 'cleaning mechanism'. For the HfO 2 /SiO 2 reflectors, laser conditioning was effective to eject the nodules on substrate. It resulted from the nodule residue not to affect the subsequent laser. In addition, laser conditioning was not effective to the nodule in the film, which might be from the material spatter in coating process. In this case, other method could be used to get rid of the nodules. (authors)

  2. Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

    Science.gov (United States)

    Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

    2017-10-01

    The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

  3. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    OpenAIRE

    Lin, Yu-Hsien; Chou, Jay-Chi

    2014-01-01

    This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

  4. Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

    International Nuclear Information System (INIS)

    Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

    2014-01-01

    In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

  5. Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

    International Nuclear Information System (INIS)

    Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

    2013-01-01

    HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

  6. Analyses of desorbed H2O with temperature programmed desorption technique in sol-gel derived HfO2 thin films

    International Nuclear Information System (INIS)

    Shimizu, H.; Nemoto, D.; Ikeda, M.; Nishide, T.

    2009-01-01

    Hafnium oxide (HfO 2 ) is a promising material for the gate insulator in highly miniaturized silicon (Si) ultra-large-scale-integration (ULSI) devices (32 nm and beyond). In the field chemistry, a sol-gel processing has been used to fabricate HfO 2 thin film with the advantages of low cost, relative simplicity, and easy control of the composition of the layers formed. Temperature-programmed desorption (TPD) has been used not only for analyzing adsorbed gases on the surfaces of bulk sol-gel-derived HfO 2 of sol-gel-derived HfO 2 thin film fired at 350, 450, 550 and 700 deg C in sol-gel derived HfO 2 films in air is investigated using TPD, and also the material characterization of HfO 2 thin films is evaluated by X-ray diffraction (XRD) method. The dielectric constant of the films was also estimated using the capacitance-voltage (C-V) method. TPD is essentially a method of analyzing desorped gases from samples heated by infra-red light as a function of temperature under vacuum conditions using a detector of quadruple mass spectroscopy (QMS). Sol-gel-derived HfO 2 films were fabricated on 76-mm-diameter Si(100) wafers as follows. Hafnia sol solutions were prepared by dissolving HfCl 4 in NH 4 OH solution, followed by the of HCOOH. (author)

  7. Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

    Science.gov (United States)

    Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

    2017-11-01

    The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

  8. MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

    International Nuclear Information System (INIS)

    Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

    2006-01-01

    We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

  9. SHI induced effects on the electrical and optical properties of HfO_2 thin films deposited by RF sputtering

    International Nuclear Information System (INIS)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P.

    2016-01-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO_2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO_2 is the only alternative to reduce the leakage current. HfO_2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO_2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO_2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  10. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

    Science.gov (United States)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-17

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  11. Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

    International Nuclear Information System (INIS)

    Yue, Huang; Hong-Yan, Gou; Qing-Qing, Sun; Shi-Jin, Ding; Wei, Zhang; Shi-Li, Zhang

    2009-01-01

    We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO 2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10 11 cm −2 and a diameter range of 5–8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO 2 dielectric exhibits a large C – V hysteresis window of 11.9V for ±11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 × 10 −8 A/cm −2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed

  12. Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation

    Science.gov (United States)

    Ye, Li; Tingting, Jiang; Qingqing, Sun; Pengfei, Wang; Shijin, Ding; Wei, Zhang

    2012-03-01

    HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2. A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing. The composition, the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment. With a nitrogen concentration increase from 1.41 to 7.45%, the bandgap of the films decreased from 5.82 to 4.94 eV.

  13. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati

    2014-03-14

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery capacity at a current density of 150 mAg -1 after 100 cycles is 548 and 853 mAhg-1 for the uncoated and HfO2-coated anodes, respectively. Material analysis reveals that the HfO2 layers are amorphous in nature and conformably coat the SnO2-based anodes. In addition, the analysis reveals that ALD HfO2 not only protects the SnO2-based anodes from irreversible reactions with the electrolyte and buffers its volume change, but also chemically interacts with the SnO2 anodes to increase battery capacity, despite the fact that HfO2 is itself electrochemically inactive. The amorphous nature of HfO2 is an important factor in explaining its behavior, as it still allows sufficient Li diffusion for an efficient anode lithiation/delithiation process to occur, leading to higher battery capacity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

    KAUST Repository

    Yesibolati, Nulati; Shahid, Muhammad; Chen, Wei; Hedhili, Mohamed N.; Reuter, Mark C.; Ross, Frances M.; Alshareef, Husam N.

    2014-01-01

    For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery

  15. Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

    Science.gov (United States)

    Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

    2018-03-01

    In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

  16. Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

    Science.gov (United States)

    Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

    2017-11-24

    We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

  17. Variable angle spectroscopic ellipsometric characterization of HfO2 thin film

    Science.gov (United States)

    Kumar, M.; Kumari, N.; Karar, V.; Sharma, A. L.

    2018-02-01

    Hafnium Oxide film was deposited on BK7 glass substrate using reactive oxygenated E-Beam deposition technique. The film was deposited using in-situ quartz crystal thickness monitoring to control the film thickness and rate of evaporation. The thin film was grown with a rate of deposition of 0.3 nm/s. The coated substrate was optically characterized using spectrophotometer to determine its transmission spectra. The optical constants as well as film thickness of the hafnia film were extracted by variable angle spectroscopic ellipsometry with Cauchy fitting at incidence angles of 65˚, 70˚ and 75˚.

  18. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

    2018-01-01

    In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

  19. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2018-05-01

    Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

  20. Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

    Science.gov (United States)

    Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

    2017-10-01

    Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

  1. Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

    International Nuclear Information System (INIS)

    Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi

    2015-01-01

    The thermal diffusion of germanium and oxygen atoms in HfO 2 /GeO 2 /Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18 O-tracers composing the GeO 2 underlayers diffuse within the HfO 2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO 2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO 2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO x interlayers between the HfO 2 and GeO 2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks

  2. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    International Nuclear Information System (INIS)

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-01-01

    Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

  3. Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

    2014-01-01

    The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

  4. Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

    International Nuclear Information System (INIS)

    Lai, C.S.; Wu, W.C.; Chao, T.S.; Chen, J.H.; Wang, J.C.; Tay, L.-L.; Rowell, Nelson

    2006-01-01

    In this letter, the effects of pre-CF 4 plasma treatment on Si for sputtered HfO 2 gate dielectrics are investigated. The significant fluorine was incorporated at the HfO 2 /Si substrate interface for a sample with the CF 4 plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF 4 plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF 4 plasma treated sample due to the elimination of the interfacial layer between HfO 2 and Si substrate. These improved characteristics of the HfO 2 gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO 2 film into the Si substrate

  5. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

    International Nuclear Information System (INIS)

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  6. Probing the thermal decomposition behaviors of ultrathin HfO2 films by an in situ high temperature scanning tunneling microscope.

    Science.gov (United States)

    Xue, Kun; Wang, Lei; An, Jin; Xu, Jianbin

    2011-05-13

    The thermal decomposition of ultrathin HfO(2) films (∼0.6-1.2 nm) on Si by ultrahigh vacuum annealing (25-800 °C) is investigated in situ in real time by scanning tunneling microscopy. Two distinct thickness-dependent decomposition behaviors are observed. When the HfO(2) thickness is ∼ 0.6 nm, no discernible morphological changes are found below ∼ 700 °C. Then an abrupt reaction occurs at 750 °C with crystalline hafnium silicide nanostructures formed instantaneously. However, when the thickness is about 1.2 nm, the decomposition proceeds gradually with the creation and growth of two-dimensional voids at 800 °C. The observed thickness-dependent behavior is closely related to the SiO desorption, which is believed to be the rate-limiting step of the decomposition process.

  7. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

    International Nuclear Information System (INIS)

    Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

    2011-01-01

    Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

  8. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  9. Characterization of electron beam deposited thin films of HfO2 and binary thin films of (HfO2:SiO2) by XRD and EXAFS measurements

    International Nuclear Information System (INIS)

    Das, N.C.; Sahoo, N.K.; Bhattacharyya, D.; Thakur, S.; Kamble, N.M.; Nanda, D.; Hazra, S.; Bal, J.K.; Lee, J.F.; Tai, Y.L.; Hsieh, C.A.

    2009-10-01

    In this report, we have discussed the microstructure and the local structure of composite thin films having varying hafnia and silica compositions and prepared by reactive electron beam evaporation. XRD and EXAFS studies have confirmed that the pure hafnium oxide thin film has crystalline microstructure whereas the films with finite hafnia and silica composition are amorphous. The result of EXAFS analysis has shown that the bond lengths as well as coordination numbers around hafnium atom change with the variation of hafnia and silica compositions in the thin film. Finally, change of bond lengths has been correlated with change of refractive index and band gap of the composite thin films. (author)

  10. A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

    International Nuclear Information System (INIS)

    Zou, Xiao; Tong, Xingsheng; Fang, Guojia; Yuan, Longyan; Zhao, Xingzhong

    2010-01-01

    High-κ HfO x N y and HfO 2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering. The electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors and thin-film transistors (TFTs) are then investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can effectively improve the interface quality and enhance the reliability of the devices. Electrical properties with an interface-state density of 5.2 × 10 11 eV −1 cm −2 , capacitance equivalent thickness of 1.65 nm, gate leakage current density of 3.4 × 10 −5 A cm −2 at V fb +1 V, equivalent permittivity of 23.6 and hysteresis voltage of 110 mV are obtained for an Al/HfO x N y /a-IGZO MIS capacitor. Superior performance of HfO x N y /a-IGZO TFTs has also been achieved with a low threshold voltage of 0.33 V, a high saturation mobility of 12.1 cm 2 V −1 s −1 and a large on–off current ratio up to 7 × 10 7 (W/L = 500/20 µm) at 3 V

  11. Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

    Science.gov (United States)

    Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.

    2017-10-01

    A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.

  12. Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

    Science.gov (United States)

    Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

    2016-06-01

    The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  13. Carbon-coated ZnO mat passivation by atomic-layer-deposited HfO2 as an anode material for lithium-ion batteries.

    Science.gov (United States)

    Jung, Mi-Hee

    2017-11-01

    ZnO has had little consideration as an anode material in lithium-ion batteries compared with other transition-metal oxides due to its inherent poor electrical conductivity and large volume expansion upon cycling and pulverization of ZnO-based electrodes. A logical design and facile synthesis of ZnO with well-controlled particle sizes and a specific morphology is essential to improving the performance of ZnO in lithium-ion batteries. In this paper, a simple approach is reported that uses a cation surfactant and a chelating agent to synthesize three-dimensional hierarchical nanostructured carbon-coated ZnO mats, in which the ZnO mats are composed of stacked individual ZnO nanowires and form well-defined nanoporous structures with high surface areas. In order to improve the performance of lithium-ion batteries, HfO 2 is deposited on the carbon-coated ZnO mat electrode via atomic layer deposition. Lithium-ion battery devices based on the carbon-coated ZnO mat passivation by atomic layer deposited HfO 2 exhibit an excellent initial discharge and charge capacities of 2684.01 and 963.21mAhg -1 , respectively, at a current density of 100mAg -1 in the voltage range of 0.01-3V. They also exhibit cycle stability after 125 cycles with a capacity of 740mAhg -1 and a remarkable rate capability. Copyright © 2017 Elsevier Inc. All rights reserved.

  14. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  15. Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

    Science.gov (United States)

    Kamijyo, Masahiro; Onozuka, Tomotake; Yoshida, Naoto; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

    2004-09-01

    Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

  16. Fabrication of Metal Nanoparticle Arrays in the ZrO2(Y, HfO2(Y, and GeOx Films by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Oleg Gorshkov

    2017-01-01

    Full Text Available The single sheet arrays of Au nanoparticles (NPs embedded into the ZrO2(Y, HfO2(Y, and GeOx (x≈2 films have been fabricated by the alternating deposition of the nanometer-thick dielectric and metal films using Magnetron Sputtering followed by annealing. The structure and optical properties of the NP arrays have been studied, subject to the fabrication technology parameters. The possibility of fabricating dense single sheet Au NP arrays in the matrices listed above with controlled NP sizes (within 1 to 3 nm and surface density has been demonstrated. A red shift of the plasmonic optical absorption peak in the optical transmission spectra of the nanocomposite films (in the wavelength band of 500 to 650 nm has been observed. The effect was attributed to the excitation of the collective surface plasmon-polaritons in the dense Au NP arrays. The nanocomposite films fabricated in the present study can find various applications in nanoelectronics (e.g., single electronics, nonvolatile memory devices, integrated optics, and plasmonics.

  17. Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

    International Nuclear Information System (INIS)

    Kim, Seonghyun; Park, Jubong; Jung, Seungjae; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang; Lee, Daeseok; Woo, Jiyong; Choi, Godeuni

    2012-01-01

    In this study, we propose a new and effective methodology for improving the resistive-switching performance of memory devices by high-pressure hydrogen annealing under ambient conditions. The reduction effect results in the uniform creation of oxygen vacancies that in turn enable forming-free operation and afford uniform switching characteristics. In addition, H + and mobile hydroxyl (OH − ) ions are generated, and these induce fast switching operation due to the higher mobility compared to oxygen ions. Defect engineering, specifically, the introduction of hydrogen atom impurities, improves the device performance for metal–oxide-based resistive-switching random access memory devices. (paper)

  18. Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

    International Nuclear Information System (INIS)

    Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

    2016-01-01

    Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

  19. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

    2017-05-01

    In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

  20. Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

    Science.gov (United States)

    Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

    2018-02-01

    In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

  1. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  2. Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

    Science.gov (United States)

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-05-24

    The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  3. Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

    Science.gov (United States)

    Materlik, Robin; Künneth, Christopher; Falkowski, Max; Mikolajick, Thomas; Kersch, Alfred

    2018-04-01

    III-valent dopants have shown to be most effective in stabilizing the ferroelectric, crystalline phase in atomic layer deposited, polycrystalline HfO2 thin films. On the other hand, such dopants are commonly used for tetragonal and cubic phase stabilization in ceramic HfO2. This difference in the impact has not been elucidated so far. The prospect is a suitable doping to produce ferroelectric HfO2 ceramics with a technological impact. In this paper, we investigate the impact of Al, Y, and La doping, which have experimentally proven to stabilize the ferroelectric Pca21 phase in HfO2, in a comprehensive first-principles study. Density functional theory calculations reveal the structure, formation energy, and total energy of various defects in HfO2. Most relevant are substitutional electronically compensated defects without oxygen vacancy, substitutional mixed compensated defects paired with a vacancy, and ionically compensated defect complexes containing two substitutional dopants paired with a vacancy. The ferroelectric phase is strongly favored with La and Y in the substitutional defect. The mixed compensated defect favors the ferroelectric phase as well, but the strongly favored cubic phase limits the concentration range for ferroelectricity. We conclude that a reduction of oxygen vacancies should significantly enhance this range in Y doped HfO2 thin films. With Al, the substitutional defect hardly favors the ferroelectric phase before the tetragonal phase becomes strongly favored with the increasing concentration. This could explain the observed field induced ferroelectricity in Al-doped HfO2. Further Al defects are investigated, but do not favor the f-phase such that the current explanation remains incomplete for Al doping. According to the simulation, doping alone shows clear trends, but is insufficient to replace the monoclinic phase as the ground state. To explain this fact, some other mechanism is needed.

  4. Suspended HfO2 photonic crystal slab on III-nitride/Si platform

    International Nuclear Information System (INIS)

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

    2014-01-01

    We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  5. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  6. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

    Directory of Open Access Journals (Sweden)

    Nenad Novkovski

    2018-01-01

    Full Text Available Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V, several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

  7. Perpendicular magnetic anisotropy of CoFeB\\Ta bilayers on ALD HfO2

    Directory of Open Access Journals (Sweden)

    Bart F. Vermeulen

    2017-05-01

    Full Text Available Perpendicular magnetic anisotropy (PMA is an essential condition for CoFe thin films used in magnetic random access memories. Until recently, interfacial PMA was mainly known to occur in materials stacks with MgO\\CoFe(B interfaces or using an adjacent crystalline heavy metal film. Here, PMA is reported in a CoFeB\\Ta bilayer deposited on amorphous high-κ dielectric (relative permittivity κ=20 HfO2, grown by atomic layer deposition (ALD. PMA with interfacial anisotropy energy Ki up to 0.49 mJ/m2 appears after annealing the stacks between 200°C and 350°C, as shown with vibrating sample magnetometry. Transmission electron microscopy shows that the decrease of PMA starting from 350°C coincides with the onset of interdiffusion in the materials. High-κ dielectrics are potential enablers for giant voltage control of magnetic anisotropy (VCMA. The absence of VCMA in these experiments is ascribed to a 0.6 nm thick magnetic dead layer between HfO2 and CoFeB. The results show PMA can be easily obtained on ALD high-κ dielectrics.

  8. Chemical reaction at the interface between pentacene and HfO2

    International Nuclear Information System (INIS)

    Kang, S.J.; Yi, Y.; Kim, K.H.; Yoo, C.Y.; Moewes, A.; Cho, M.H.; Denlinger, J.D.; Whang, C.N.; Chang, G.S.

    2005-01-01

    The electronic structure and the interface formation at the interface region between pentacene and HfO2 are investigated using x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and x-ray emission spectroscopy (XES). The measured C 1s XPS spectra of pentacene indicate that chemical bonding occurs at the interface between pentacene and HfO2. The carbon of pentacene reacts with oxygen belonging to HfO2 and band bending occurs at the interface due to a redistribution of charge. The determined interface dipole and band bending between pentacene and HfO2 are 0.04 and 0.1 eV, respectively. The highest occupied molecular orbital (HOMO) level is observed at 0.68 eV below the Fermi level. This chemical reaction allows us to grow a pentacene film with large grains onto HfO2. We conclude that high performance pentacene thin film transistors can be obtained by inserting an ultrathin HfO2 layer between pentacene and a gate insulator

  9. Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

    Science.gov (United States)

    Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

    2015-01-01

    The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

  10. Mechanisms and selectivity for etching of HfO2 and Si in BCl3 plasmas

    International Nuclear Information System (INIS)

    Wang Chunyu; Donnelly, Vincent M.

    2008-01-01

    The authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature (T s ) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO 2 and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO x Cl y ). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl

  11. Energy-band alignment of (HfO2)x(Al2O3)1-x gate dielectrics deposited by atomic layer deposition on β-Ga2O3 (-201)

    Science.gov (United States)

    Yuan, Lei; Zhang, Hongpeng; Jia, Renxu; Guo, Lixin; Zhang, Yimen; Zhang, Yuming

    2018-03-01

    Energy band alignments between series band of Al-rich high-k materials (HfO2)x(Al2O3)1-x and β-Ga2O3 are investigated using X-Ray Photoelectron Spectroscopy (XPS). The results exhibit sufficient conduction band offsets (1.42-1.53 eV) in (HfO2)x(Al2O3)1-x/β-Ga2O3. In addition, it is also obtained that the value of Eg, △Ec, and △Ev for (HfO2)x(Al2O3)1-x/β-Ga2O3 change linearly with x, which can be expressed by 6.98-1.27x, 1.65-0.56x, and 0.48-0.70x, respectively. The higher dielectric constant and higher effective breakdown electric field of (HfO2)x(Al2O3)1-x compared with Al2O3, coupled with sufficient barrier height and lower gate leakage makes it a potential dielectric for high voltage β-Ga2O3 power MOSFET, and also provokes interest in further investigation of HfAlO/β-Ga2O3 interface properties.

  12. The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

    Science.gov (United States)

    Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

    2017-07-01

    In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

  13. High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

    International Nuclear Information System (INIS)

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-01

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

  14. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    Directory of Open Access Journals (Sweden)

    Gloux Florence

    2011-01-01

    Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

  15. Chemical states and electronic structure of a HfO(-2)/Ge(001) interface

    International Nuclear Information System (INIS)

    Seo, Kang-ill; McIntyre, Paul C.; Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; SLAC, SSRL; Saraswat, Krishna C.; Stanford U., Elect. Eng. Dept.

    2005-01-01

    We report the chemical bonding structure and valence band alignment at the HfO 2 /Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO 2 film using a dilute HF-solution. We found that a very non-stoichiometric GeO x layer exists at the HfO 2 /Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO x was determined to be ΔE v (Ge-GeO x ) = 2.2 ± 0.15 eV, and that between Ge and HfO 2 , ΔE v (Ge-HfO 2 ) = 2.7 ± 0.15 eV

  16. Characterization of luminescent samarium doped HfO2 coatings synthesized by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Chacon-Roa, C; Guzman-Mendoza, J; Aguilar-Frutis, M; Garcia-Hipolito, M; Alvarez-Fragoso, O; Falcony, C

    2008-01-01

    Trivalent samarium (Sm 3+ ) doped hafnium oxide (HfO 2 ) films were deposited using the spray pyrolysis deposition technique. The films were deposited on Corning glass substrates at temperatures ranging from 300 to 550 deg. C using chlorides as raw materials. Films, mostly amorphous, were obtained when deposition temperatures were below 350 deg. C. However, for temperatures higher than 400 deg. C, the films became polycrystalline, presenting the HfO 2 monoclinic phase. Scanning electron microscopy of the films revealed a rough surface morphology with spherical particles. Also, electron energy dispersive analysis was performed on these films. The photoluminescence and cathodoluminescence characteristics of the HfO 2 : SmCl 3 films, measured at room temperature, exhibited four main bands centred at 570, 610, 652 and 716 nm, which are due to the well-known intra-4f transitions of the Sm 3+ ion. It was found that the overall emission intensity rose as the deposition temperature was increased. Furthermore, a concentration quenching of the luminescence intensity was also observed

  17. Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  18. Formation and disruption of conductive filaments in a HfO2/TiN structure

    International Nuclear Information System (INIS)

    Brivio, S; Tallarida, G; Cianci, E; Spiga, S

    2014-01-01

    The process of the formation and disruption of nanometric conductive filaments in a HfO 2 /TiN structure is investigated by conductive atomic force microscopy. The preforming state evidences nonhomogeneous conduction at high fields through conductive paths, which are associated with pre-existing defects and develop into conductive filaments with a forming procedure. The disruption of the same filaments is demonstrated as well, according to a bipolar operation. In addition, the conductive tip of the microscopy is exploited to perform electrical operations on single conductive spots, which evidences that neighboring conductive filaments are not electrically independent. We propose a picture that describes the evolution of the shape of the conductive filaments in the processes of their formation and disruption, which involves the development of conductive branches from a common root; this root resides in the pre-existing defects that lay at the HfO 2 /TiN interface. (paper)

  19. Effect of oxide charge trapping on x-ray photoelectron spectroscopy of HfO2/SiO2/Si structures

    International Nuclear Information System (INIS)

    Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji

    2009-01-01

    We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)

  20. Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

    Science.gov (United States)

    He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

    2017-08-30

    The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

  1. Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

    International Nuclear Information System (INIS)

    Ganapathi, Kolla Lakshmi; Bhat, Navakanta; Mohan, Sangeneni

    2014-01-01

    HfO 2  thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O 2  flow rate, during evaporation is optimized for 35 nm thick HfO 2  films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O 2  flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O 2  flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO 2  films deposited at two O 2  flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO 2  film deposited at 3 SCCM O 2  flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices. (paper)

  2. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

    International Nuclear Information System (INIS)

    Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

    2006-01-01

    To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

  3. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.

    Science.gov (United States)

    Han, Yong; Cho, Kyoungah; Park, Sukhyung; Kim, Sangsig

    2014-11-01

    In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.

  4. Pressure-induced phase transformation of HfO2

    International Nuclear Information System (INIS)

    Arashi, H.

    1992-01-01

    This paper reports on the pressure dependence of the Raman spectra of HfO 2 that was measured by a micro-Raman technique using a single-crystal specimen in the pressure range from 0 to 10 GPa at room temperature. The symmetry assignment of Raman bands of the monoclinic phase was experimentally accomplished from the polarization measurements for the single crystal. With increased pressure, a phase transformation for the monoclinic phase took place at 4.3 ± 0.3 GPa. Nineteen Raman bands were observed for the high-pressure phase. The spectral structure of the Raman bands for the high-pressure phase was similar with those reported previously for ZrO 2 . The space group for the high pressure phase of HfO 2 was determined as Pbcm, which was the same as that of the high-pressure phase for ZrO 2 on the basis of the number and the spectral structure of the Raman bands

  5. Study of Direct-Contact HfO2/Si Interfaces

    Directory of Open Access Journals (Sweden)

    Noriyuki Miyata

    2012-03-01

    Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

  6. Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions

    Science.gov (United States)

    Pringle, Spencer Allen

    HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any

  7. First principle simulations on the effects of oxygen vacancy in HfO2-based RRAM

    Directory of Open Access Journals (Sweden)

    Yuehua Dai

    2015-01-01

    Full Text Available HfO2-based resistive random access memory (RRAM takes advantage of oxygen vacancy (V o defects in its principle of operation. Since the change in resistivity of the material is controlled by the level of oxygen deficiency in the material, it is significantly important to study the performance of oxygen vacancies in formation of conductive filament. Excluding effects of the applied voltage, the Vienna ab initio simulation package (VASP is used to investigate the orientation and concentration mechanism of the oxygen vacancies based on the first principle. The optimal value of crystal orientation [010] is identified by means of the calculated isosurface plots of partial charge density, formation energy, highest isosurface value, migration barrier, and energy band of oxygen vacancy in ten established orientation systems. It will effectively influence the SET voltage, forming voltage, and the ON/OFF ratio of the device. Based on the results of orientation dependence, different concentration models are established along crystal orientation [010]. The performance of proposed concentration models is evaluated and analyzed in this paper. The film is weakly conductive for the samples deposited in a mixture with less than 4.167at.% of V o contents, and the resistive switching (RS phenomenon cannot be observed in this case. The RS behavior improves with an increase in the V o contents from 4.167at.% to 6.25at.%; nonetheless, it is found difficult to switch to a stable state. However, a higher V o concentration shows a more favorable uniformity and stability for HfO2-based RRAM.

  8. Study of bulk Hafnium oxide (HfO2) under compression

    Science.gov (United States)

    Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

    2018-04-01

    Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

  9. Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

    International Nuclear Information System (INIS)

    Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

    2006-01-01

    Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

  10. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  11. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    International Nuclear Information System (INIS)

    Bulusu, A.; Singh, A.; Kim, H.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B.; Cullen, D.; Graham, S.

    2015-01-01

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al 2 O 3 )/hafnium oxide (HfO 2 ) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN x layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers

  12. Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO_2 substrates

    International Nuclear Information System (INIS)

    Frascaroli, Jacopo; Seguini, Gabriele; Spiga, Sabina; Perego, Michele; Boarino, Luca

    2015-01-01

    Block copolymer-based templates can be exploited for the fabrication of ordered arrays of metal nanoparticles (NPs) with a diameter down to a few nanometers. In order to develop this technique on metal oxide substrates, we studied the self-assembly of polymeric templates directly on the HfO_2 surface. Using a random copolymer neutralization layer, we obtained an effective HfO_2 surface neutralization, while the effects of surface cleaning and annealing temperature were carefully examined. Varying the block copolymer molecular weight, we produced regular nanoporous templates with feature size variable between 10 and 30 nm and a density up to 1.5 × 10"1"1 cm"−"2. With the adoption of a pattern transfer process, we produced ordered arrays of Pt and Pt/Ti NPs with diameters of 12, 21 and 29 nm and a constant size dispersion (σ) of 2.5 nm. For the smallest template adopted, the NP diameter is significantly lower than the original template dimension. In this specific configuration, the granularity of the deposited film probably influences the pattern transfer process and very small NPs of 12 nm were achieved without a significant broadening of the size distribution. (paper)

  13. GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

    Science.gov (United States)

    Han, Kefeng; Zhu, Lin

    2017-09-01

    In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the {{{Al}}}0.28{{{Ga}}}0.72{{N}} barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm-1, the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

  14. Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

    Science.gov (United States)

    García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

    2018-04-01

    The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

  15. Ab initio study of mechanical and thermo-acoustic properties of tough ceramics: applications to HfO2 in its cubic and orthorhombic phase

    International Nuclear Information System (INIS)

    Ponce, C A; Casali, R A; Caravaca, M A

    2008-01-01

    By means of the ab initio all-electron new full-potential linear-muffin-tin orbitals method, calculations were made for elastic constants C 11 , C 12 and C 44 for Si, ZrO 2 and HfO 2 in their cubic phase, and constants C 11 , C 22 , C 33 , C 12 , C 13 , C 23 , C 44 , C 55 and C 66 for HfO 2 in its orthorhombic phase. Using the Voigt and Reuss theory, estimations were made for polycrystals of their bulk, shear and Young moduli, and Poisson coefficients. The speed of elastic wave propagations and Debye temperatures were estimated for polycrystals built from Si and the above mentioned compounds. The semicore 4f 14 electrons should be included in the valence set of Hf atom in this all-electron approach if accurate results for elastic properties under pressures are looked for

  16. Interface engineered HfO2-based 3D vertical ReRAM

    International Nuclear Information System (INIS)

    Hudec, Boris; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Hou, Tuo-Hung; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária

    2016-01-01

    We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO 2 /TiN memory cell. The HfO 2 switching layer is grown by atomic layer deposition on the sidewall of a SiO 2 /TiN/SiO 2 /TiN/SiO 2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 10 4 s and excellent switching stability at 400 K. Endurance of 10 7 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance. (paper)

  17. Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

    Science.gov (United States)

    Padilha, A. C. M.; McKenna, K. P.

    2018-04-01

    Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

  18. SIMS study of oxygen diffusion in monoclinic HfO2

    Science.gov (United States)

    Mueller, Michael P.; De Souza, Roger A.

    2018-01-01

    The diffusion of oxygen in dense ceramics of monoclinic HfO2 was studied by means of (18O/16O) isotope exchange annealing and subsequent determination of isotope depth profiles by Secondary Ion Mass Spectrometry. Anneals were performed in the temperature range of 573 ≤T /K ≤ 973 at an oxygen partial pressure of p O2=200 mbar . All measured isotope profiles exhibited two features: the first feature, closer to the surface, was attributed mainly to slow oxygen diffusion in an impurity silicate phase; the second feature, deeper in the sample, was attributed to oxygen diffusion in bulk monoclinic HfO2 . The activation enthalpy of oxygen tracer diffusion in bulk HfO2 was found to be ΔHD∗≈0.5 eV .

  19. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

    2014-01-01

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  20. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  1. Preparation and characterization of Ce-doped HfO2 nanoparticles

    International Nuclear Information System (INIS)

    Gálvez-Barboza, S.; González, L.A.; Puente-Urbina, B.A.; Saucedo-Salazar, E.M.; García-Cerda, L.A.

    2015-01-01

    Highlights: • Ce-doped HfO 2 nanoparticles were prepared by a modified solgel method. • Ce-doped HfO 2 nanoparticles have a semispherical shape with sizes between 6 and 11.5 nm. • The samples doped with 10% in weight of Ce directly crystallized in a cubic structure. • A quick, straightforward and effective route for the preparation of Ce-doped nanoparticles. - Abstract: A modified solgel method to synthesize Ce-doped HfO 2 nanoparticles was carried out using a precursor material prepared with cerium nitrate, hafnium chloride, citric acid and ethylene glycol. The obtained precursor material was calcined at 500 and 700 °C for 2 h in air. The influence of the concentration of Ce and the calcination temperature was studied to observe the structural and morphological changes of the obtained materials. For the characterization, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman scattering (RS) were employed. The XRD patterns shown that the Ce-doped HfO 2 undergoes a structural transformation from monoclinic to cubic phase, which is significantly dependent on the Ce content and calcination temperature. TEM images have also confirmed the existence of semispherical nanoparticles with sizes between 6 and 11.5 nm

  2. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

    Science.gov (United States)

    Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

  3. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    Science.gov (United States)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  4. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics.

    Science.gov (United States)

    Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C; Kim, Hyoungsub

    2017-08-29

    We studied the impact of H 2 pressure during post-metallization annealing on the chemical composition of a HfO 2 /Al 2 O 3 gate stack on a HCl wet-cleaned In 0.53 Ga 0.47 As substrate by comparing the forming gas annealing (at atmospheric pressure with a H 2 partial pressure of 0.04 bar) and H 2 high-pressure annealing (H 2 -HPA at 30 bar) methods. In addition, the effectiveness of H 2 -HPA on the passivation of the interface states was compared for both p- and n-type In 0.53 Ga 0.47 As substrates. The decomposition of the interface oxide and the subsequent out-diffusion of In and Ga atoms toward the high-k film became more significant with increasing H 2 pressure. Moreover, the increase in the H 2 pressure significantly improved the capacitance‒voltage characteristics, and its effect was more pronounced on the p-type In 0.53 Ga 0.47 As substrate. However, the H 2 -HPA induced an increase in the leakage current, probably because of the out-diffusion and incorporation of In/Ga atoms within the high-k stack.

  5. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-13

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

  6. Issues concerning the determination of solubility products of sparingly soluble crystalline solids. Solubility of HfO2(cr)

    International Nuclear Information System (INIS)

    Rai, Dhanpat; Kitamura, Akira; Rosso, Kevin M.; Sasaki, Takayuki; Kobayashi, Taishi

    2016-01-01

    Solubility studies were conducted with HfO 2 (cr) solid as a function HCl and ionic strength ranging from 2.0 to 0.004 mol kg -1 . These studies involved (1) using two different amounts of the solid phase, (2) acid washing the bulk solid phase, (3) preheating the solid phase to 1400 C, and (4) heating amorphous HfO 2 (am) suspensions to 90 C to ascertain whether the HfO 2 (am) converts to HfO 2 (cr) and to determine the solubility from the oversaturation direction. Based on the results of these treatments it is concluded that the HfO 2 (cr) contains a small fraction of less crystalline, but not amorphous, material [HfO 2 (lcr)] and this, rather than the HfO 2 (cr), is the solubility-controlling phase in the range of experimental variables investigated in this study. The solubility data are interpreted using both the Pitzer and SIT models and they provide log 10 K 0 values of -(59.75±0.35) and -(59.48±0.41), respectively, for the solubility product of HfO 2 (lcr)[HfO 2 (lcr) + 2H 2 O ↔ Hf 4+ + 4OH - ]. The log 10 of the solubility product of HfO 2 (cr) is estimated to be < -63. The observation of a small fraction of less crystalline higher solubility material is consistent with the general picture that mineral surfaces are often structurally and/or compositionally imperfect leading to a higher solubility than the bulk crystalline solid. This study stresses the urgent need, during interpretation of solubility data, of taking precautions to make certain that the observed solubility behavior for sparingly-soluble solids is assigned to the proper solid phase.

  7. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Science.gov (United States)

    Sales, T. S. N.; Cavalcante, F. H. M.; Bosch-Santos, B.; Pereira, L. F. D.; Cabrera-Pasca, G. A.; Freitas, R. S.; Saxena, R. N.; Carbonari, A. W.

    2017-05-01

    In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).

  8. Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

    Directory of Open Access Journals (Sweden)

    T. S. N. Sales

    2017-05-01

    Full Text Available In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2 nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM with electron back scattering diffraction (EBSD, and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%.

  9. Field-enhanced route to generating anti-Frenkel pairs in HfO2

    Science.gov (United States)

    Schie, Marcel; Menzel, Stephan; Robertson, John; Waser, Rainer; De Souza, Roger A.

    2018-03-01

    The generation of anti-Frenkel pairs (oxygen vacancies and oxygen interstitials) in monoclinic and cubic HfO2 under an applied electric field is examined. A thermodynamic model is used to derive an expression for the critical field strength required to generate an anti-Frenkel pair. The critical field strength of EaFcr˜101GVm-1 obtained for HfO2 exceeds substantially the field strengths routinely employed in the forming and switching operations of resistive switching HfO2 devices, suggesting that field-enhanced defect generation is negligible. Atomistic simulations with molecular static (MS) and molecular dynamic (MD) approaches support this finding. The MS calculations indicated a high formation energy of Δ EaF≈8 eV for the infinitely separated anti-Frenkel pair, and only a decrease to Δ EaF≈6 eV for the adjacent anti-Frenkel pair. The MD simulations showed no defect generation in either phase for E <3 GVm-1 , and only sporadic defect generation in the monoclinic phase (at E =3 GVm-1 ) with fast (trec<4 ps ) recombination. At even higher E but below EaFcr both monoclinic and cubic structures became unstable as a result of field-induced deformation of the ionic potential wells. Further MD investigations starting with preexisting anti-Frenkel pairs revealed recombination of all pairs within trec<1 ps , even for the case of neutral vacancies and charged interstitials, for which formally there is no electrostatic attraction between the defects. In conclusion, we find no physically reasonable route to generating point-defects in HfO2 by an applied field.

  10. Design and Fabrication of Interdigital Nanocapacitors Coated with HfO2

    Directory of Open Access Journals (Sweden)

    Gabriel González

    2015-01-01

    Full Text Available In this article nickel interdigital capacitors were fabricated on top of silicon substrates. The capacitance of the interdigital capacitor was optimized by coating the electrodes with a 60 nm layer of HfO2. An analytical solution of the capacitance was compared to electromagnetic simulations using COMSOL and with experimental measurements. Results show that modeling interdigital capacitors using Finite Element Method software such as COMSOL is effective in the design and electrical characterization of these transducers.

  11. Thermal expansion studies on HfO2-Gd2O3 system

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Antony, M.P.; Nagarajan, K.

    2014-01-01

    A series of solid solutions containing GdO 1.5 in HfO 2 , (Hf 1-y Gd y ) O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out using room temperature X-ray diffraction measurements

  12. Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

    Directory of Open Access Journals (Sweden)

    Yuehua Dai

    2016-08-01

    Full Text Available The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

  13. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    Science.gov (United States)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  14. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

    Science.gov (United States)

    Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

    2018-01-01

    The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

  15. High-temperature x-ray diffraction study of HfTiO4-HfO2 solid solutions

    International Nuclear Information System (INIS)

    Carpenter, D.A.

    1975-01-01

    High-temperature x-ray diffraction techniques were used to determine the axial thermal expansion curves of HfTiO 4 -HfO 2 solid solutions as a function of composition. Data show increasing anisotropy with increasing HfO 2 content. An orthorhombic-to-monoclinic phase transformation was detected near room temperature for compositions near the high HfO 2 end of the orthorhombic phase field and for compositions within the two-phase region (HfTiO 4 solid solution plus HfO 2 solid solution). An orthorhombic-to-cubic phase transformation is indicated by data from oxygen-deficient materials at greater than 1873 0 K. (U.S.)

  16. On the phase formation of sputtered hafnium oxide and oxynitride films

    International Nuclear Information System (INIS)

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-01-01

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O - ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O - ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O - ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O - bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

  17. Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

    International Nuclear Information System (INIS)

    Scheidecker, R.W.

    1979-01-01

    Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

  18. A thorough investigation of the progressive reset dynamics in HfO2-based resistive switching structures

    International Nuclear Information System (INIS)

    Lorenzi, P.; Rao, R.; Irrera, F.; Suñé, J.; Miranda, E.

    2015-01-01

    According to previous reports, filamentary electron transport in resistive switching HfO 2 -based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated here that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics

  19. Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

    Science.gov (United States)

    Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

    2018-03-01

    In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

  20. Oxidation of ruthenium thin films using atomic oxygen

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  1. PAC study in the HfO2-SiO2 system

    International Nuclear Information System (INIS)

    Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.

    2010-01-01

    A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .

  2. Theoretical prediction of ion conductivity in solid state HfO2

    Science.gov (United States)

    Zhang, Wei; Chen, Wen-Zhou; Sun, Jiu-Yu; Jiang, Zhen-Yi

    2013-01-01

    A theoretical prediction of ion conductivity for solid state HfO2 is carried out in analogy to ZrO2 based on the density functional calculation. Geometric and electronic structures of pure bulks exhibit similarity for the two materials. Negative formation enthalpy and negative vacancy formation energy are found for YSH (yttria-stabilized hafnia) and YSZ (yttria-stabilized zirconia), suggesting the stability of both materials. Low activation energies (below 0.7 eV) of diffusion are found in both materials, and YSH's is a little higher than that of YSZ. In addition, for both HfO2 and ZrO2, the supercells with native oxygen vacancies are also studied. The so-called defect states are observed in the supercells with neutral and +1 charge native vacancy but not in the +2 charge one. It can give an explanation to the relatively lower activation energies of yttria-doped oxides and +2 charge vacancy supercells. A brief discussion is presented to explain the different YSH ion conductivities in the experiment and obtained by us, and we attribute this to the different ion vibrations at different temperatures.

  3. HfO2 and SiO2 as barriers in magnetic tunneling junctions

    Science.gov (United States)

    Shukla, Gokaran; Archer, Thomas; Sanvito, Stefano

    2017-05-01

    SiO2 and HfO2 are both high-k, wide-gap semiconductors, currently used in the microelectronic industry as gate barriers. Here we investigate whether the same materials can be employed to make magnetic tunnel junctions, which in principle can be amenable for integration in conventional Si technology. By using a combination of density functional theory and the nonequilibrium Green's functions method for quantum transport we have studied the transport properties of Co [0001 ] /SiO2[001 ] /Co [0001 ] and Fe [001 ] /HfO2[001 ] /Fe [001 ] junctions. In both cases we found a quite large magnetoresistance, which is explained through the analysis of the real band structure of the magnets and the complex one of the insulator. We find that there is no symmetry spin filtering for the Co-based junction since the high transmission Δ2' band crosses the Fermi level, EF, for both spin directions. However, the fact that Co is a strong ferromagnet makes the orbital contribution to the two Δ2' spin subbands different, yielding magnetoresistance. In contrast for the Fe-based junction symmetry filtering is active for an energy window spanning between the Fermi level and 1 eV below EF, with Δ1 symmetry contributing to the transmission.

  4. Influence of phosphorous precursors on spectroscopic properties of Er3+-activated SiO2-HfO2-P2O5 planar waveguides

    International Nuclear Information System (INIS)

    Vasilchenko, I; Carpentiero, A; Chiappini, A; Chiasera, A; Ferrari, M; Vaccari, A; Lukowiak, A; Righini, G C; Vereshagin, V

    2014-01-01

    (70-x)SiO 2 -30HfO 2 -xP 2 O 5 (x= 5, 10 mol %) glass planar waveguides activated by 0.5 mol% Er 3 + ions were prepared by sol-gel route. Several phosphorous precursors have been investigated for the synthesis of a dielectric stable sol useful for the realization of planar waveguides. The waveguides were investigated by different diagnostic techniques. The optical properties such as refractive index, thickness, number of propagating modes and attenuation coefficient were measured at 632.8 and 543.5 nm by prism coupling technique. Transmission measurements were carried out in order to assess the transparency of the deposited films. Photoluminescence measurements and lifetime decay curves of the Er 3 + transition (4 I 13/2 → 4 I 15/2 ) were performed in order to investigate the role of P 2 O 5

  5. Atomically flat platinum films grown on synthetic mica

    Science.gov (United States)

    Tanaka, Hiroyuki; Taniguchi, Masateru

    2018-04-01

    Atomically flat platinum thin films were heteroepitaxially grown on synthetic fluorophlogopite mica [KMg3(AlSi3O10)F2] by van der Waals epitaxy. Platinum films deposited on a fluorophlogopite mica substrate by inductively coupled plasma-assisted sputtering with oxygen introduction on a synthetic mica substrate resulted in the growth of twin single-crystalline epitaxial Pt(111) films.

  6. Properties of phases in HfO2-TiO2 system

    International Nuclear Information System (INIS)

    Red'ko, V.P.; Terekhovskij, P.B.; Majster, I.M.; Shevchenko, A.V.; Lopato, L.M.; Dvernyakova, A.A.

    1990-01-01

    A study was made on axial and linear coefficients of thermal expansion (CTE) of HfO 2 -TiO 2 system samples in concentration range of 25-50 mol% TiO 2 . Samples, containing 35 and 37 mol% TiO 2 , are characterized by the lowest values of linear CTE. Dispersion of the basic substances doesn't affect CTE value. Correlation with axial and linear CTE of samples in ZrO 2 -TiO 2 system was conducted. Presence of anisotropy of change of lattice parameters was supported for samples, containing 37.5 and 40 mol% TiO 2 . Polymorphous transformations for hafnium titanate were not revealed

  7. Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

    Science.gov (United States)

    Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

    2016-10-01

    In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

  8. Ab initio localized basis set study of structural parameters and elastic properties of HfO2 polymorphs

    International Nuclear Information System (INIS)

    Caravaca, M A; Casali, R A

    2005-01-01

    The SIESTA approach based on pseudopotentials and a localized basis set is used to calculate the electronic, elastic and equilibrium properties of P 2 1 /c, Pbca, Pnma, Fm3m, P4 2 nmc and Pa3 phases of HfO 2 . Using separable Troullier-Martins norm-conserving pseudopotentials which include partial core corrections for Hf, we tested important physical properties as a function of the basis set size, grid size and cut-off ratio of the pseudo-atomic orbitals (PAOs). We found that calculations in this oxide with the LDA approach and using a minimal basis set (simple zeta, SZ) improve calculated phase transition pressures with respect to the double-zeta basis set and LDA (DZ-LDA), and show similar accuracy to that determined with the PPPW and GGA approach. Still, the equilibrium volumes and structural properties calculated with SZ-LDA compare better with experiments than the GGA approach. The bandgaps and elastic and structural properties calculated with DZ-LDA are accurate in agreement with previous state of the art ab initio calculations and experimental evidence and cannot be improved with a polarized basis set. These calculated properties show low sensitivity to the PAO localization parameter range between 40 and 100 meV. However, this is not true for the relative energy, which improves upon decrease of the mentioned parameter. We found a non-linear behaviour in the lattice parameters with pressure in the P 2 1 /c phase, showing a discontinuity of the derivative of the a lattice parameter with respect to external pressure, as found in experiments. The common enthalpy values calculated with the minimal basis set give pressure transitions of 3.3 and 10.8?GPa for P2 1 /c → Pbca and Pbca → Pnma, respectively, in accordance with different high pressure experimental values

  9. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    Directory of Open Access Journals (Sweden)

    Chin-Sheng Pang

    2014-04-01

    Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

  10. Coexistence of different charge states in Ta-doped monoclinic HfO2: Theoretical and experimental approaches

    DEFF Research Database (Denmark)

    Taylor, M.A.; Alonso, R.E.; Errico, L.A.

    2010-01-01

    A combination of experiments and ab initio quantum-mechanical calculations has been applied to examine hyperfine interactions in Ta-doped hafnium dioxide. Although the properties of monoclinic HfO2 have been the subject of several earlier studies, some aspects remain open. In particular, time dif...

  11. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  12. In-situ atomic layer deposition growth of Hf-oxide

    International Nuclear Information System (INIS)

    Karavaev, Konstantin

    2010-01-01

    We have grown HfO 2 on Si(001) by atomic layer deposition (ALD) using HfCl 4 , TEMAHf, TDMAHf and H 2 O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl 4 experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO 2 . The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO 2 : contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

  13. Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

    2012-02-01

    The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

  14. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal

    2015-06-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Mechanistic Insight into the Stability of HfO2-Coated MoS2 Nanosheet Anodes for Sodium Ion Batteries

    KAUST Repository

    Ahmed, Bilal; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    It is demonstrated for the first time that surface passivation of 2D nanosheets of MoS2 by an ultrathin and uniform layer of HfO2 can significantly improve the cyclic performance of sodium ion batteries. After 50 charge/discharge cycles, bare MoS2 and HfO2 coated MoS2 electrodes deliver the specific capacity of 435 and 636 mAh g-1, respectively, at current density of 100 mA g-1. These results imply that batteries using HfO2 coated MoS2 anodes retain 91% of the initial capacity; in contrast, bare MoS2 anodes retain only 63%. Also, HfO2 coated MoS2 anodes show one of the highest reported capacity values for MoS2. Cyclic voltammetry and X-ray photoelectron spectroscopy results suggest that HfO2 does not take part in electrochemical reaction. The mechanism of capacity retention with HfO2 coating is explained by ex situ transmission electron microscope imaging and electrical impedance spectroscopy. It is illustrated that HfO2 acts as a passivation layer at the anode/electrolyte interface and prevents structural degradation during charge/discharge process. Moreover, the amorphous nature of HfO2 allows facile diffusion of Na ions. These results clearly show the potential of HfO2 coated MoS2 anodes, which performance is significantly higher than previous reports where bulk MoS2 or composites of MoS2 with carbonaceous materials are used. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Thermoluminescence in HfO_2:Eu"3"+ powders irradiated in UV

    International Nuclear Information System (INIS)

    Ceron R, P. V.; Montes R, E.; Rivera M, T.; Diaz G, J. A. I.; Guzman M, J.

    2016-10-01

    Various inorganic compounds synthesized for photo luminescent applications have also presented a thermoluminescent (Tl) response, for example the metal oxides doped with rare earths. This property extends the use of these materials to the radiation dosimetry. For this reason, in this work the Tl response is presented in HfO_2:Eu"3"+ powders synthesized by the hydrothermal path, exposed to ultraviolet (UV) radiation of 254 nm. The kinetic parameters of its brightness curve were also calculated using the Chen expressions and the analysis method based on the shape of the curve. For the powders irradiated for 10 min the highest Tl response corresponds to the sample with 5% of the impurity, which is 6.5 times higher than the signal corresponding to the intrinsic sample. Its bright curve shows a main peak with a maximum in 148 degrees Celsius and a second order kinetics. Another test with the same material shows the Tl response against the exposure time, with a maximum in the 3 minutes. These calculations and tests constitute a first approach for the study of these powders as Tl dosimeter for UV radiation. (Author)

  17. Introduction to liquid wall film atomization

    Directory of Open Access Journals (Sweden)

    Jícha Miroslav

    2012-04-01

    Full Text Available The objective of the article is an introduction to the theoretical study of atomization of droplets from the surface of a thin liquid film. The overview of basic principles of atomization prediction is complemented by the comparison of the calculations performed according to the selected approaches.

  18. Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

    KAUST Repository

    Chand, Umesh

    2017-08-05

    We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

  19. Atomic layer deposition of a MoS₂ film.

    Science.gov (United States)

    Tan, Lee Kheng; Liu, Bo; Teng, Jing Hua; Guo, Shifeng; Low, Hong Yee; Tan, Hui Ru; Chong, Christy Yuen Tung; Yang, Ren Bin; Loh, Kian Ping

    2014-09-21

    A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.

  20. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

    Science.gov (United States)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-03-02

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

  1. Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

    Science.gov (United States)

    Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

    2017-03-01

    Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

  2. (Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells

    KAUST Repository

    Tétreault, Nicolas

    2011-01-01

    Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al 2O 3, ZnO, SnO 2, Nb 2O 5, HfO 2, Ga 2O 3 and TiO 2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy. ©The Electrochemical Society.

  3. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    International Nuclear Information System (INIS)

    Zhang, H.Y.; He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C.; Zhuge, L.J.; Wu, X.M.

    2015-01-01

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO x are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf 2+ and Hf 4+ . The HfErO films are composed with the structures of HfO 2 , HfO and ErO x , which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO 2 in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO 2 are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  4. Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

    International Nuclear Information System (INIS)

    Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

    2011-01-01

    This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer. In comparison to a memory capacitor with a single HfO 2 trapping layer, the erase speed of a memory capacitor with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔV FB = 4 V, the device with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO 2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application

  5. Control of magnetism by electrical charge doping or redox reactions in a surface-oxidized Co thin film with a solid-state capacitor structure

    Science.gov (United States)

    Hirai, T.; Koyama, T.; Chiba, D.

    2018-03-01

    We have investigated the electric field (EF) effect on magnetism in a Co thin film with a naturally oxidized surface. The EF was applied to the oxidized Co surface through a gate insulator layer made of HfO2, which was formed using atomic layer deposition (ALD). The efficiency of the EF effect on the magnetic anisotropy in the sample with the HfO2 layer deposited at the appropriate temperature for the ALD process was relatively large compared to the previously reported values with an unoxidized Co film. The coercivity promptly and reversibly followed the variation in gate voltage. The modulation of the channel resistance was at most ˜0.02%. In contrast, a dramatic change in the magnetic properties including the large change in the saturation magnetic moment and a much larger EF-induced modulation of the channel resistance (˜10%) were observed in the sample with a HfO2 layer deposited at a temperature far below the appropriate temperature range. The response of these properties to the gate voltage was very slow, suggesting that a redox reaction dominated the EF effect on the magnetism in this sample. The frequency response for the capacitive properties was examined to discuss the difference in the mechanism of the EF effect observed here.

  6. Enhanced atom mobility on the surface of a metastable film.

    Science.gov (United States)

    Picone, A; Riva, M; Fratesi, G; Brambilla, A; Bussetti, G; Finazzi, M; Duò, L; Ciccacci, F

    2014-07-25

    A remarkable enhancement of atomic diffusion is highlighted by scanning tunneling microscopy performed on ultrathin metastable body-centered tetragonal Co films grown on Fe(001). The films follow a nearly perfect layer-by-layer growth mode with a saturation island density strongly dependent on the layer on which the nucleation occurs, indicating a lowering of the diffusion barrier. Density functional theory calculations reveal that this phenomenon is driven by the increasing capability of the film to accommodate large deformations as the thickness approaches the limit at which a structural transition occurs. These results disclose the possibility of tuning surface diffusion dynamics and controlling cluster nucleation and self-organization.

  7. MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

    International Nuclear Information System (INIS)

    Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

    2012-01-01

    Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  8. Rapid formation of nanocrystalline HfO2 powders from amorphous hafnium hydroxide under ultrasonically assisted hydrothermal treatment

    International Nuclear Information System (INIS)

    Meskin, Pavel E.; Sharikov, Felix Yu.; Ivanov, Vladimir K.; Churagulov, Bulat R.; Tretyakov, Yury D.

    2007-01-01

    Peculiarities of hafnium hydroxide hydrothermal decomposition were studied by in situ heat flux calorimetry for the first time. It was shown that this process occurs in one exothermal stage (ΔH = -17.95 kJ mol -1 ) at 180-250 deg. C resulting in complete crystallization of amorphous phase with formation of pure monoclinic HfO 2 . It was found that the rate of m-HfO 2 formation can be significantly increased by combining hydrothermal treatment with simultaneous ultrasonic activation

  9. Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

    Directory of Open Access Journals (Sweden)

    Deepthi Nagulapally

    2015-01-01

    Full Text Available The Inverse Piezoelectric Effect (IPE is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs. Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  10. HfO2 - rare earth oxide systems in the region with high content of rare earth oxide

    International Nuclear Information System (INIS)

    Shevchenko, A.V.; Lopato, L.M.

    1982-01-01

    Using the methods of annealing and hardenings (10 2 -10 4 deg/s cooling rate) and differential thermal analysis elements of state diagrams of HfO 2 - rare earth oxide (rare earths-La, Pr, Nd, Sm, Gd, Tb, Dy, Y, Er, Yb, Lu, Sc) systems from 1800 deg C up to melting in the range of 60-100 mol% rare earth oxide concentration were constructed. Regularities of HfQ 2 addition effect on high-temperature polymorphic transformations of rare earth oxides were studied. Results of investigation were discussed from viewpoint of crystal chemistry

  11. The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

    International Nuclear Information System (INIS)

    Kent, Tyler; Edmonds, Mary; Kummel, Andrew C.; Tang, Kechao; Negara, Muhammad Adi; McIntyre, Paul; Chobpattana, Varistha; Mitchell, William; Sahu, Bhagawan; Galatage, Rohit; Droopad, Ravi

    2015-01-01

    Current logic devices rely on 3D architectures, such as the tri-gate field effect transistor (finFET), which utilize the (001) and (110) crystal faces simultaneously thus requiring passivation methods for the (110) face in order to ensure a pristine 3D surface prior to further processing. Scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), and correlated electrical measurement on MOSCAPs were utilized to compare the effects of a previously developed in situ pre-atomic layer deposition (ALD) surface clean on the InGaAs (001) and (110) surfaces. Ex situ wet cleans are very effective on the (001) surface but not the (110) surface. Capacitance voltage indicated the (001) surface with no buffered oxide etch had a higher C max hypothesized to be a result of poor nucleation of HfO 2 on the native oxide. An in situ pre-ALD surface clean employing both atomic H and trimethylaluminum (TMA) pre-pulsing, developed by Chobpattana et al. and Carter et al. for the (001) surface, was demonstrated to be effective on the (110) surface for producing low D it high C ox MOSCAPs. Including TMA in the pre-ALD surface clean resulted in reduction of the magnitude of the interface state capacitance. The XPS studies show the role of atomic H pre-pulsing is to remove both carbon and oxygen while STM shows the role of TMA pre-pulsing is to eliminate H induced etching. Devices fabricated at 120 °C and 300 °C were compared

  12. Effects of atomic oxygen on titanium dioxide thin film

    Science.gov (United States)

    Shimosako, Naoki; Hara, Yukihiro; Shimazaki, Kazunori; Miyazaki, Eiji; Sakama, Hiroshi

    2018-05-01

    In low earth orbit (LEO), atomic oxygen (AO) has shown to cause degradation of organic materials used in spacecrafts. Similar to other metal oxides such as SiO2, Al2O3 and ITO, TiO2 has potential to protect organic materials. In this study, the anatese-type TiO2 thin films were fabricated by a sol-gel method and irradiated with AO. The properties of TiO2 were compared using mass change, scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), transmittance spectra and photocatalytic activity before and after AO irradiation. The results indicate that TiO2 film was hardly eroded and resistant against AO degradation. AO was shown to affects only the surface of a TiO2 film and not the bulk. Upon AO irradiation, the TiO2 films were slightly oxidized. However, these changes were very small. Photocatalytic activity of TiO2 was still maintained in spite of slight decrease upon AO irradiation, which demonstrated that TiO2 thin films are promising for elimination of contaminations outgassed from a spacecraft's materials.

  13. Monocrystalline zinc oxide films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

    2010-01-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  14. Interaction of atomic hydrogen with ethylene adsorbed on nickel films

    International Nuclear Information System (INIS)

    Korchak, V.N.; Tret'yakov, I.I.; Kislyuk, M.U.

    1976-01-01

    The reactivity of ethylene adsorbed on the pure films of nickel at various temperatures was studied with respect to hydrogen atoms generated in the gaseous phase. The experiments were conducted in a glass vacuum apparatus enabling one to obtain the highest vacuum up to 2x20 -10 torr. The catalyst, nickel films, was produced by their deposition onto the walls of the glass reactor at a pressure of the residual gas of 10 -9 torr and a temperature of the walls of 25 deg C. Gas purity was analyzed by the mass spectrometric method. The ethylene adsorbed at the temperatures below 173 deg K reacted readily with the hydrogen atoms to yield ethane. The process ran without practically any activation energy involved and was limited by the attachment of the first hydrogen atom to the ethylene molecule. The efficiency of this interaction was 0.02 of the number of the hydrogen atoms collisions against the surface occupied by the ethylene. The adsorption of the ethylene at room and higher temperatures was accompanied by its disproportioning with the release of the hydrogen into the gaseous phase and a serious destruction of the ethylene molecules adsorbed to produce hydrogen residues interacting with neither molecular nor atomic hydrogen [ru

  15. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

    Science.gov (United States)

    Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

    2018-01-01

    Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

  16. High temperature X-ray diffraction studies on HfO2-Gd2O3 system

    International Nuclear Information System (INIS)

    Panneerselvam, G.; Antony, M.P.; Ananthasivan, K.; Joseph, M.

    2016-01-01

    High temperature X-ray diffraction (HTXRD) technique is an important experimental tool for measuring thermal expansion of materials of interest. A series of solid solutions containing GdO 1.5 in HfO 2 ,Hf 1-y Gd y )O 2 (y = 0.15, 0.2, 0.3, 0.41 and 0.505) were prepared by solid state method. Structural characterization and computation of lattice parameter was carried out by using room temperature X-ray diffraction measurements. The room temperature lattice parameter estimated for (Hf 1-y Gd y )O 2 (y=0.15, 0.2, 0.3, 0.41 and 0.505) are 0.51714 nm, 0.51929 nm, 0.52359nm, 0.52789nm and 0.53241 nm, respectively. Thermal expansion coefficients and percentage linear thermal expansion of the HfO 2 -Gd 2 O 3 solid solutions containing 20 and 41 mol% GdO 1.5 were determined using HTXRD in the temperature range 298 to 1673K. The mean linear thermal expansion coefficients of the solid solutions containing 20 and 41 mol. %Gd are 11.65 x 10 -6 K -1 and 12.07 x 10 -6 K -1 , respectively. (author)

  17. Properties of model atomic free-standing thin films.

    Science.gov (United States)

    Shi, Zane; Debenedetti, Pablo G; Stillinger, Frank H

    2011-03-21

    We present a computational study of the thermodynamic, dynamic, and structural properties of free-standing thin films, investigated via molecular dynamics simulation of a glass-forming binary Lennard-Jones mixture. An energy landscape analysis is also performed to study glassy states. At equilibrium, species segregation occurs, with the smaller minority component preferentially excluded from the surface. The film's interior density and interface width depend solely on temperature and not the initialization density. The atoms at the surface of the film have a higher lateral diffusivity when compared to the interior. The average difference between the equilibrium and inherent structure energies assigned to individual particles, as a function of the distance from the center of the film, increases near the surface. A minimum of this difference occurs in the region just under the liquid-vapor interface. This suggests that the surface atoms are able to sample the underlying energy landscape more effectively than those in the interior, and we suggest a possible relationship of this observation to the recently reported formation of stable glasses by vapor phase deposition.

  18. Titanium dioxide thin films by atomic layer deposition: a review

    Science.gov (United States)

    Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

    2017-09-01

    Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

  19. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    International Nuclear Information System (INIS)

    Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

    2015-01-01

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

  20. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  1. Deposition of yttrium oxysulfide thin films by atomic layer epitaxy

    International Nuclear Information System (INIS)

    Kukli, K.; University of Tartu, Tartu,; Johansson, L-S.; Nykaenen, E.; Peussa, M.; Ninistoe, L.

    1998-01-01

    Full text: Yttrium oxysulfide is a highly interesting material for optoelectronic applications. It is industrially exploited in the form of doped powder in catholuminescent phosphors, e.g. Y 2 O 2 S: Eu 3+ for colour TV. Attempts to grow thin films of Y 2 O 2 S have not been frequent and only partially successful due to the difficulties in obtaining crystalline films at a reasonable temperature. Furthermore, sputtering easily leads to a sulphur deficiency. Evaporation of the elements from a multi-source offers a better control of the stoichiometry resulting in hexagonal (0002) oriented films at 580 deg C. In this paper we present the first successful thin film growth experiments using a chemical process with molecular precursors. Atomic layer epitaxy (ALE) allows the use of a relatively low deposition temperature and thus compatibility with other technologies. Already at 425 deg C the reaction between H 2 S and Y(thd) 3 (thd = 2,2,6,6 - tetramethyl-heptane-3,5- dione) yields a crystalline Y 2 O 2 S thin film which was characterized by XRD, XRF and XPS

  2. Distortion of liquid film discharging from twin-fluid atomizer

    Science.gov (United States)

    Mehring, C.; Sirignano, W. A.

    2001-11-01

    The nonlinear distortion and disintegration of a thin liquid film exiting from a two-dimensional twin-fluid atomizer is analyzed numerically. Pulsed gas jets impacting on both sides of the discharging liquid film at the atomizer exit generate dilational and/or sinuous deformations of the film. Both liquid phase and gas phase are inviscid and incompressible. For the liquid phase the so-called long-wavelength approximation is employed yielding a system of unsteady one-dimensional equations for the planar film. Solution of Laplace's equation for the velocity potential yields the gas-phase velocity field on both sides of the liquid stream. Coupling between both phases is described through kinematic and dynamic boundary conditions at the phase interfaces, and includes the solution of the unsteady Bernoulli equation to determine the gas-phase pressure along the interfaces. Both gas- and liquid-phase equations are solved simultaneously. Solution of Laplace's equation for the gas streams is obtained by means of a boundary-element method. Numerical solutions for the liquid phase use the Lax-Wendroff method with Richtmyer splitting. Sheet distortion resulting from the stagnation pressure of the impacting gas jets and subsequent disturbance amplification due to Kelvin-Helmholtz effects are studied for various combinations of gas-pulse timing, gas-jet impact angles, gas-to-liquid-density ratio, liquid-phase Weber number and gas-jet-to-liquid-jet-momentum ratio. Dilational and sinuous oscillations of the liquid are examined and film pinch-off is predicted.

  3. Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

    International Nuclear Information System (INIS)

    Cabout, T.; Buckley, J.; Cagli, C.; Jousseaume, V.; Nodin, J.-F.; Salvo, B. de; Bocquet, M.; Muller, Ch.

    2013-01-01

    This paper deals with the role of platinum or titanium–titanium nitride electrodes on variability of resistive switching characteristics and electrical performances of HfO 2 -based memory elements. Capacitor-like Pt/HfO 2 (10 nm)/Pt and Ti/HfO 2 (10 nm)/TiN structures were fabricated on top of a tungsten pillar bottom electrode and integrated in-between two interconnect metal lines. First, quasi-static measurements were performed to apprehend the role of electrodes on electroforming, set and reset operations and their corresponding switching parameters. Memory elements with Pt as top and bottom electrodes exhibited a non-polar behavior with sharp decrease of current during reset operation while Ti/HfO 2 /TiN capacitors showed a bipolar switching behavior, with a gradual reset. In a second step, statistical distributions of switching parameters (voltage and resistance) were extracted from data obtained on few hundreds of capacitors. Even if the resistance in low resistive state and reset voltage was found to be comparable for both types of electrodes, the progressive reset operation observed on samples with Ti/TiN electrodes led to a lower variability of resistance in high resistive state and concomitantly of set voltage. In addition Ti–TiN electrodes enabled gaining: (i) lower forming and set voltages with significantly narrower capacitor-to-capacitor distributions; (ii) a better data retention capability (10 years at 65 °C instead of 10 years at 50 °C for Pt electrodes); (iii) satisfactory dynamic performances with lower set and reset voltages for ramp speed ranging from 10 −2 to 10 7 V/s. The significant improvement of switching behavior with Ti–TiN electrodes is mainly attributed to the formation of a native interface layer between HfO 2 oxide and Ti top electrode. - Highlights: ► HfO2 based capacitor-like structures were fabricated with Pt and Ti based electrodes. ► Influence of electrode materials on switching parameter variability is assessed. ► Switching parameter variability is linked to switching behaviors. ► Data retention and dynamic performances are presented

  4. The Development of HfO2-Rare Earth Based Oxide Materials and Barrier Coatings for Thermal Protection Systems

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan James

    2014-01-01

    Advanced hafnia-rare earth oxides, rare earth aluminates and silicates have been developed for thermal environmental barrier systems for aerospace propulsion engine and thermal protection applications. The high temperature stability, low thermal conductivity, excellent oxidation resistance and mechanical properties of these oxide material systems make them attractive and potentially viable for thermal protection systems. This paper will focus on the development of the high performance and high temperature capable ZrO2HfO2-rare earth based alloy and compound oxide materials, processed as protective coating systems using state-or-the-art processing techniques. The emphasis has been in particular placed on assessing their temperature capability, stability and suitability for advanced space vehicle entry thermal protection systems. Fundamental thermophysical and thermomechanical properties of the material systems have been investigated at high temperatures. Laser high-heat-flux testing has also been developed to validate the material systems, and demonstrating durability under space entry high heat flux conditions.

  5. Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination

    Science.gov (United States)

    Mondal, Sandip

    2018-04-01

    This experiment demonstrates the electrical behaviors of fully solution processed HfO2(MOS) in presence of different optical illumination. The capacitance voltage measurement was performed at frequency of 100 kHz with a DC gate sweep voltage of ±5V (with additional AC voltage of 100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is found that there is a large shift in flatband voltage of 120mV due presence of white light during the CV measurement. However there is negligible change in flatband voltage (30mV) has been observed due to illumination of deep UV light.

  6. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors.

    Science.gov (United States)

    Ma, Qian; Zheng, He-Mei; Shao, Yan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Zhang, David Wei

    2018-01-09

    Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as precursors. The In 2 O 3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (E g ) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In 2 O 3 , and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In 2 O 3 thin-film transistors with an Al 2 O 3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm 2 /V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 10 7 . This was ascribed to passivation of oxygen vacancies in the device channel.

  7. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry

    National Research Council Canada - National Science Library

    George, Steven

    1997-01-01

    Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures...

  9. The influence of thermal treatment on the phase development in HfO2-Al2O3 and ZrO2-Al2O3 systems

    International Nuclear Information System (INIS)

    Stefanic, G.; Music, S.; Trojko, R.

    2005-01-01

    Amorphous precursors of HfO 2 -AlO 1.5 and ZrO 2 -AlO 1.5 systems covering the whole concentration range were co-precipitated from aqueous solutions of the corresponding salts. The thermal behaviour of the amorphous precursors was examined by differential thermal analysis, X-ray powder diffraction (XRD), laser Raman spectroscopy and scanning electron microscopy. The crystallization temperature of both systems increased with increase in the AlO 1.5 content, from 530 to 940 deg. C in the HfO 2 -AlO 1.5 system, and from 405 to 915 deg. C in the ZrO 2 -AlO 1.5 system. The results of phase analysis indicate an extended capability for the incorporation of Al 3+ ions in the metastable HfO 2 - and ZrO 2 -type solid solutions obtained after crystallization of amorphous co-gels. Precise determination of lattice parameters, performed using whole-powder-pattern decomposition method, showed that the axial ratio c f /a f in the ZrO 2 - and HfO 2 -type solid solutions with 10 mol% or more of Al 3+ approach 1. The tetragonal symmetry of these samples, as determined by laser Raman spectroscopy, was attributed to the displacement of the oxygen sublattice from the ideal fluorite positions. It was found that the lattice parameters of the ZrO 2 -type solid solutions decreased with increasing Al 3+ content up to ∼10 mol%, whereas above 10 mol%, further increase of the Al 3+ content has very small influence on the unit-cell volume of both HfO 2 - and ZrO 2 -type solid solutions. The reason for such behaviour was discussed. The solubility of Hf 4+ and Zr 4+ ions in the aluminium oxides lattice appeared to be negligible

  10. Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique

    Science.gov (United States)

    Kosiel, Kamil; Koba, Marcin; Masiewicz, Marcin; Śmietana, Mateusz

    2018-06-01

    The paper shows application of atomic layer deposition (ALD) technique as a tool for tailoring sensorial properties of lossy-mode-resonance (LMR)-based optical fiber sensors. Hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and tantalum oxide (TaxOy), as high-refractive-index dielectrics that are particularly convenient for LMR-sensor fabrication, were deposited by low-temperature (100 °C) ALD ensuring safe conditions for thermally vulnerable fibers. Applicability of HfO2 and ZrO2 overlays, deposited with ALD-related atomic level thickness accuracy for fabrication of LMR-sensors with controlled sensorial properties was presented. Additionally, for the first time according to our best knowledge, the double-layer overlay composed of two different materials - silicon nitride (SixNy) and TaxOy - is presented for the LMR fiber sensors. The thin films of such overlay were deposited by two different techniques - PECVD (the SixNy) and ALD (the TaxOy). Such approach ensures fast overlay fabrication and at the same time facility for resonant wavelength tuning, yielding devices with satisfactory sensorial properties.

  11. Effect of annealing on structural changes and oxygen diffusion in amorphous HfO2 using classical molecular dynamics

    Science.gov (United States)

    Shen, Wenqing; Kumari, Niru; Gibson, Gary; Jeon, Yoocharn; Henze, Dick; Silverthorn, Sarah; Bash, Cullen; Kumar, Satish

    2018-02-01

    Non-volatile memory is a promising alternative to present memory technologies. Oxygen vacancy diffusion has been widely accepted as one of the reasons for the resistive switching mechanism of transition-metal-oxide based resistive random access memory. In this study, molecular dynamics simulation is applied to investigate the diffusion coefficient and activation energy of oxygen in amorphous hafnia. Two sets of empirical potential, Charge-Optimized Many-Body (COMB) and Morse-BKS (MBKS), were considered to investigate the structural and diffusion properties at different temperatures. COMB predicts the activation energy of 0.53 eV for the temperature range of 1000-2000 K, while MBKS predicts 2.2 eV at high temperature (1600-2000 K) and 0.36 eV at low temperature (1000-1600 K). Structural changes and appearance of nano-crystalline phases with increasing temperature might affect the activation energy of oxygen diffusion predicted by MBKS, which is evident from the change in coordination number distribution and radial distribution function. None of the potentials make predictions that are fully consistent with density functional theory simulations of both the structure and diffusion properties of HfO2. This suggests the necessity of developing a better multi-body potential that considers charge exchange.

  12. Control of thermal deformation in dielectric mirrors using mechanical design and atomic layer deposition.

    Science.gov (United States)

    Gabriel, Nicholas T; Kim, Sangho S; Talghader, Joseph J

    2009-07-01

    A mechanical design technique for optical coatings that simultaneously controls thermal deformation and optical reflectivity is reported. The method requires measurement of the refractive index and thermal stress of single films prior to the design. Atomic layer deposition was used for deposition because of the high repeatability of the film constants. An Al2O3/HfO2 distributed Bragg reflector was deposited with a predicted peak reflectivity of 87.9% at 542.4 nm and predicted edge deformation of -360 nm/K on a 10 cm silicon substrate. The measured peak reflectivity was 85.7% at 541.7 nm with an edge deformation of -346 nm/K.

  13. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    Science.gov (United States)

    2014-09-01

    sputter-deposition. A large band gap coupled with low absorption provide optical transparency over a broad range in the electromagnetic spectrum; HfO2...k) in the middle of the visible spec- trum, and C influences n(k) to a greater extent in shorter wave - lengths [31]. Note that this principle behind...Approved for publicnanocrystalline HfO2 films crystallize in monoclinic structure. Fur - thermore, increasing Ts results in improved structural order and

  14. Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface

    International Nuclear Information System (INIS)

    Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

    2011-01-01

    Silicon nanowire field effect transistor sensors with SiO 2 /HfO 2 as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO 2 as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

  15. Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

    Science.gov (United States)

    Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

    2011-10-07

    Silicon nanowire field effect transistor sensors with SiO(2)/HfO(2) as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO(2) as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

  16. Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

    Directory of Open Access Journals (Sweden)

    Atan N.

    2016-01-01

    Full Text Available Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method’s practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source–drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO2/TiSi2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations and noise factors were evaluated by examining the Taguchi’s signal-to-noise ratio (SNR and nominal-the-best for the threshold voltage (VTH. After optimization, the result showed that the VTH value of the 18-nm PMOS device was -0.291339.

  17. Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

    Science.gov (United States)

    Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

    2018-03-01

    Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

  18. High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

    International Nuclear Information System (INIS)

    Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

    2014-01-01

    Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

  19. Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2008-10-01

    A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

  20. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications

    International Nuclear Information System (INIS)

    Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Maciel Cerda, A.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

    2010-01-01

    Hafnium oxide (HfO 2 ) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 deg. C. For substrate temperatures lower than 400 deg. C the deposited films were amorphous, while for substrate temperatures higher than 450 deg. C, the monoclinic phase of HfO 2 appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO 2 , with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

  1. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S; Ridge, Claron J.; Rö tzer, Marian David; Zwaschka, Gregor; Braun, Thomas; D'Elia, Valerio; Basset, Jean-Marie; Schweinberger, Florian Frank; Gü nther, Sebastian; Heiz, Ueli

    2015-01-01

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly

  2. Atomic-scale epitaxial aluminum film on GaAs substrate

    Directory of Open Access Journals (Sweden)

    Yen-Ting Fan

    2017-07-01

    Full Text Available Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals.

  3. Optical bistability of a thin film of resonant atoms in a phase-sensitive thermostate

    International Nuclear Information System (INIS)

    Basharov, A.M.

    1995-01-01

    It is shown theoretically that when a thin film of two-level atoms interacting with a resonant coherent electromagnetic wave is additionally illuminated with a squeezed field, a bistable transmission/reflection regime for coherent waves is obtained. This regime depends strongly on the phase difference between the coherent and the squeezed fields. New regimes, including a bistable regime, for the interaction of a coherent field with a film of resonant atoms are predicted based on this phenomenon. 14 refs., 5 figs

  4. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    Directory of Open Access Journals (Sweden)

    Laura B. Ruppalt

    2014-12-01

    Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  5. Dependence of atomic oxygen resistance and the tribological properties on microstructures of WS2 films

    International Nuclear Information System (INIS)

    Xu, Shusheng; Gao, Xiaoming; Hu, Ming; Sun, Jiayi; Jiang, Dong; Wang, Desheng; Zhou, Feng; Weng, Lijun; Liu, Weimin

    2014-01-01

    Graphical abstract: - Highlights: • Pure WS 2 and WS 2 -Al composite films with different structures were prepared. • The compactness of WS 2 film was significantly improved due to incorporation of Al. • Different mechanisms of atomic oxygen resistance of both the films were discussed. • Films before and after AO irradiation kept the unchanged tribological properties. • The composite films showed much better wear resistance than pure WS 2 film. - Abstract: To study the anti-oxidation mechanism of WS 2 films, the pure WS 2 , and Al doped WS 2 composite films were prepared via radio frequency sputtering and the atomic oxygen (AO) irradiation tests were conducted using a ground AO simulation facility. The tribological properties of both films before and after AO irradiation were evaluated using vacuum ball-on-disk tribo-tester. The incorporation of a small fraction of Al dopant resulted in microstructure change from loose columnar platelet with significant porosity for pure WS 2 film to very dense structure. In pure WS 2 film, WS 2 exists as crystalline phase with edge-plane preferential orientation, but nanocrystalline and amorphous phase coexists for the WS 2 -Al composite film. Even if large amount of AO transported into the interior through the longitudinal pores, the pure film showed good AO irradiation resistance owing to the basal plane of WS 2 crystal exhibiting much higher anti-oxidation capacity than the edge-plane. The composite film also had excellent AO irradiation resistance due to the formation of effective thinner WO 3 cladding layer in the sub-surface layer. Tribological results revealed that the composite films showed a significantly improved wear resistance, in comparison to the pure WS 2 film. Besides, due to the effective AO resistance, the tribological properties of WS 2 films remained almost unchanged before and after AO irradiation

  6. Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

    International Nuclear Information System (INIS)

    Nichau, Alexander

    2013-01-01

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO 3 and HfO 2 are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO 3 and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO 3 is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO 3 on germanium, germanate formation is shown. LaLuO 3 is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO 3 in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO 3 and HfO 2 . Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO 2 gate stacks is scalable below 1 nm by the use of thinned interfacial SiO 2 . The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the gate electrode to decrease the EOT of HfO 2 gate stacks. A lower limit found was EOT=5 Aa for Al doping inside TiN. The doping of TiN on LaLuO 3 is proven by electron energy loss spectroscopy (EELS) studies to modify the interfacial silicate layer to La-rich silicates or even reduce the layer. The oxide quality in Si/HfO 2 /TiN gate stacks is characterized by charge pumping and carrier mobility measurements on 3d MOSFETs a.k.a. FinFETs. The oxide quality in terms of the number of interface (and oxide) traps on top- and sidewall of FinFETs is compared for three different annealing processes. A high temperature anneal of HfO 2 improves significantly the oxide quality and mobility. The gate oxide integrity (GOI) of gate stacks below 1 nm EOT is determined by time-dependent dielectric breakdown (TDDB) measurements on FinFETs with HfO 2 /TiN gate stacks. A successful EOT scaling has always to consider the oxide quality and resulting reliability. Degraded oxide quality leads to mobility degradation and earlier soft-breakdown, i.e. leakage current increase.

  7. Thin film coatings which inhibit spin relaxation of polarized potassium atoms

    International Nuclear Information System (INIS)

    Thomas, G.E.; Holt, R.J.; Boyer, D.; Green, M.C.; Kowalczyk, R.S.; Young, L.

    1986-01-01

    A prototype of a polarized deuterium target which employs the spin exchange method is being developed. The mixing cell for mixing deuterium atoms and potassium vapor requires a surface that will reflect these atoms without being destroyed by the corrosive potassium. Thin film coating methods and a technique for coating pyrex are described. Results of spin relaxation measurements are given

  8. Surface Passivation of MoO3 Nanorods by Atomic Layer Deposition Towards High Rate Durable Li Ion Battery Anodes

    KAUST Repository

    Ahmed, Bilal

    2015-06-03

    We demonstrate an effective strategy to overcome the degradation of MoO3 nanorod anodes in Lithium (Li) ion batteries at high rate cycling. This is achieved by conformal nanoscale surface passivation of the MoO3 nanorods by HfO2 using atomic layer deposition (ALD). At high current density such as 1500 mA/g, the specific capacity of HfO2 coated MoO3 electrodes is 68% higher than bare MoO3 electrodes after 50 charge/discharge cycles. After 50 charge/discharge cycles, HfO2 coated MoO3 electrodes exhibited specific capacity of 657 mAh/g, on the other hand, bare MoO3 showed only 460 mAh/g. Furthermore, we observed that HfO2 coated MoO3 electrodes tend to stabilize faster than bare MoO3 electrodes because nanoscale HfO2 layer prevents structural degradation of MoO3 nanorods. Additionally, the growth temperature of MoO3 nanorods and the effect of HfO2 layer thickness was studied and found to be important parameters for optimum battery performance. The growth temperature defines the microstructural features and HfO2 layer thickness defines the diffusion coefficient of Li–ions through the passivation layer to the active material. Furthermore, ex–situ HRTEM, X–ray photoelectron spectroscopy (XPS), Raman spectroscopy and X–ray diffraction was carried out to explain the capacity retention mechanism after HfO2 coating.

  9. Surface Passivation of MoO3 Nanorods by Atomic Layer Deposition Towards High Rate Durable Li Ion Battery Anodes

    KAUST Repository

    Ahmed, Bilal; Shahid, Muhammad; Nagaraju, Doddahalli H.; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    We demonstrate an effective strategy to overcome the degradation of MoO3 nanorod anodes in Lithium (Li) ion batteries at high rate cycling. This is achieved by conformal nanoscale surface passivation of the MoO3 nanorods by HfO2 using atomic layer deposition (ALD). At high current density such as 1500 mA/g, the specific capacity of HfO2 coated MoO3 electrodes is 68% higher than bare MoO3 electrodes after 50 charge/discharge cycles. After 50 charge/discharge cycles, HfO2 coated MoO3 electrodes exhibited specific capacity of 657 mAh/g, on the other hand, bare MoO3 showed only 460 mAh/g. Furthermore, we observed that HfO2 coated MoO3 electrodes tend to stabilize faster than bare MoO3 electrodes because nanoscale HfO2 layer prevents structural degradation of MoO3 nanorods. Additionally, the growth temperature of MoO3 nanorods and the effect of HfO2 layer thickness was studied and found to be important parameters for optimum battery performance. The growth temperature defines the microstructural features and HfO2 layer thickness defines the diffusion coefficient of Li–ions through the passivation layer to the active material. Furthermore, ex–situ HRTEM, X–ray photoelectron spectroscopy (XPS), Raman spectroscopy and X–ray diffraction was carried out to explain the capacity retention mechanism after HfO2 coating.

  10. Effect of deposition rate on melting point of copper film catalyst substrate at atomic scale

    Science.gov (United States)

    Marimpul, Rinaldo; Syuhada, Ibnu; Rosikhin, Ahmad; Winata, Toto

    2018-03-01

    Annealing process of copper film catalyst substrate was studied by molcular dynamics simulation. This copper film catalyst substrate was produced using thermal evaporation method. The annealing process was limited in nanosecond order to observe the mechanism at atomic scale. We found that deposition rate parameter affected the melting point of catalyst substrate. The change of crystalline structure of copper atoms was observed before it had been already at melting point. The optimum annealing temperature was obtained to get the highest percentage of fcc structure on copper film catalyst substrate.

  11. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  12. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...... formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature....

  13. Low-Frequency Noise in Layered ReS2 Field Effect Transistors on HfO2 and Its Application for pH Sensing.

    Science.gov (United States)

    Liao, Wugang; Wei, Wei; Tong, Yu; Chim, Wai Kin; Zhu, Chunxiang

    2018-02-28

    Layered rhenium disulfide (ReS 2 ) field effect transistors (FETs), with thickness ranging from few to dozens of layers, are demonstrated on 20 nm thick HfO 2 /Si substrates. A small threshold voltage of -0.25 V, high on/off current ratio of up to ∼10 7 , small subthreshold swing of 116 mV/dec, and electron carrier mobility of 6.02 cm 2 /V·s are obtained for the two-layer ReS 2 FETs. Low-frequency noise characteristics in ReS 2 FETs are analyzed for the first time, and it is found that the carrier number fluctuation mechanism well describes the flicker (1/f) noise of ReS 2 FETs with different thicknesses. pH sensing using a two-layer ReS 2 FET with HfO 2 as a sensing oxide is then demonstrated with a voltage sensitivity of 54.8 mV/pH and a current sensitivity of 126. The noise characteristics of the ReS 2 FET-based pH sensors are also examined, and a corresponding detection limit of 0.0132 pH is obtained. Our studies suggest the high potential of ReS 2 for future low-power nanoelectronics and biosensor applications.

  14. Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

    Science.gov (United States)

    Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

    2017-09-01

    In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

  15. Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides

    Science.gov (United States)

    Yuqing, XIONG; Hengjiao, GAO; Ni, REN; Zhongwei, LIU

    2018-03-01

    Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature, using copper(I)-N,N‧-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas. The influence of temperature, plasma power, mode of plasma, and pulse time, on the deposition rate of copper thin film, the purity of the film and the step coverage were studied. The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied. The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy, respectively. The square resistance of the thin film was also tested by a four-probe technique. On the basis of on-line diagnosis, a growth mechanism of copper thin film was put forward, and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films. A high density of plasma and high free-radical content were helpful for the deposition of copper thin films.

  16. Investigating the crystal growth behavior of biodegradable polymer blend thin films using in situ atomic force microscopy

    CSIR Research Space (South Africa)

    Malwela, T

    2014-01-01

    Full Text Available This article reports the crystal growth behavior of biodegradable polylactide (PLA)/poly[(butylene succinate)-co-adipate] (PBSA) blend thin films using atomic force microscopy (AFM). Currently, polymer thin films have received increased research...

  17. Direct observation of atomic-level nucleation and growth processes from an ultrathin metallic glass films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, K. Q.; Cao, C. R.; Sun, Y. T.; Li, J.; Bai, H. Y.; Zheng, D. N., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn; Wang, W. H., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Gu, L., E-mail: l.gu@iphy.ac.cn, E-mail: dzheng@iphy.ac.cn, E-mail: whw@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-01-07

    Till date, there have been no direct atomic-level experimental observations of the earliest stages of the nucleation and growth processes of nanocrystals formed by thermally induced crystallization in ultrathin metallic glasses (MGs). Here, we present a study of the crystallization process in atomically thin and highly stable MG films using double spherical aberration-corrected scanning transmission electron microscopy (Cs-TEM). Taking advantage of the stability of MG films with a slow crystallization process and the atomic-level high resolution of Cs-TEM, we observe the formation of the nucleus precursor of nanocrystals formed by atom aggregation followed by concomitant coalescence and stepwise evolution of the shape of the nanocrystals with a monodispersed and separated bimodal size distribution. Molecular dynamics simulation of the atomic motion in the glass film on a rigid amorphous substrate confirms the stepwise evolution processes of atom aggregation, cluster formation, cluster movement on the substrate, and cluster coalescence into larger crystalline particles. Our results might provide a better fundamental understanding of the nucleation and growth processes of nanocrystals in thin MG films.

  18. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    Science.gov (United States)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-06-01

    The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm3. The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ˜48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC1-x and β-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 °C for 30 min.

  19. Atomic structure of Fe thin-films on Cu(0 0 1) studied with stereoscopic photography

    International Nuclear Information System (INIS)

    Hattori, Azusa N.; Fujikado, M.; Uchida, T.; Okamoto, S.; Fukumoto, K.; Guo, F.Z.; Matsui, F.; Nakatani, K.; Matsushita, T.; Hattori, K.; Daimon, H.

    2004-01-01

    The complex magnetic properties of Fe films epitaxially grown on Cu(0 0 1) have been discussed in relation to their atomic structure. We have studied the Fe films on Cu(0 0 1) by a new direct method for three-dimensional (3D) atomic structure analysis, so-called 'stereoscopic photography'. The forward-focusing peaks in the photoelectron angular distribution pattern excited by the circularly polarized light rotate around the light axis in either clockwise or counterclockwise direction depending on the light helicity. By using a display-type spherical mirror analyzer for this phenomenon, we can obtain stereoscopic photographs of atomic structure. The photographs revealed that the iron structure changes from bcc to fcc and almost bcc structure with increasing iron film thickness

  20. Functionalized polymer film surfaces via surface-initiated atom transfer radical polymerization

    International Nuclear Information System (INIS)

    Hu, Y.; Li, J.S.; Yang, W.T.; Xu, F.J.

    2013-01-01

    The ability to manipulate and control the surface properties of polymer films, without altering the substrate properties, is crucial to their wide-spread applications. In this work, a simple one-step method for the direct immobilization of benzyl chloride groups (as the effective atom transfer radical polymerization (ATRP) initiators) on the polymer films was developed via benzophenone-induced coupling of 4-vinylbenzyl chloride (VBC). Polyethylene (PE) and nylon films were selected as examples of polymer films to illustrate the functionalization of film surfaces via surface-initiated ATRP. Functional polymer brushes of (2-dimethylamino)ethyl methacrylate, sodium 4-styrenesulfonate, 2-hydroxyethyl methacrylate and glycidyl methacrylate, as well as their block copolymer brushes, have been prepared via surface-initiated ATRP from the VBC-coupled PE or nylon film surfaces. With the development of a simple approach to the covalent immobilization of ATRP initiators on polymer film surfaces and the inherent versatility of surface-initiated ATRP, the surface functionality of polymer films can be precisely tailored. - Highlights: ► Atom transfer radical polymerization initiators were simply immobilized. ► Different functional polymer brushes were readily prepared. ► Their block copolymer brushes were also readily prepared

  1. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  2. Atomically Thin Al2O3 Films for Tunnel Junctions

    Science.gov (United States)

    Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

    2017-06-01

    Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

  3. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.; Mejia, I.; Hovarth, J.; Alshareef, Husam N.; Cha, D. K.; Ramirez-Bon, R.; Gnade, B. E.; Quevedo-Lopez, M. A.

    2010-01-01

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  4. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  5. Optical and magnetic properties of a transparent garnet film for atomic physics experiments

    Directory of Open Access Journals (Sweden)

    Mari Saito

    2016-12-01

    Full Text Available We investigated the optical and magnetic properties of a transparent magnetic garnet with a particular focus on its applications to atomic physics experiments. The garnet film used in this study was a magnetically soft material that was originally designed for a Faraday rotator at optical communication wavelengths in the near infrared region. The film had a thickness of 2.1 μm and a small optical loss at a wavelength of λ=780 nm resonant with Rb atoms. The Faraday effect was also small and, thus, barely affected the polarization of light at λ=780 nm. In contrast, large Faraday rotation angles at shorter wavelengths enabled us to visualize magnetic domains, which were perpendicularly magnetized in alternate directions with a period of 3.6 μm. We confirmed the generation of an evanescent wave on the garnet film, which can be used for the optical observation and manipulation of atoms on the surface of the film. Finally, we demonstrated a magnetic mirror for laser-cooled Rb atoms using the garnet film.

  6. Atomic structure of a metal-supported two-dimensional germania film

    Science.gov (United States)

    Lewandowski, Adrián Leandro; Schlexer, Philomena; Büchner, Christin; Davis, Earl M.; Burrall, Hannah; Burson, Kristen M.; Schneider, Wolf-Dieter; Heyde, Markus; Pacchioni, Gianfranco; Freund, Hans-Joachim

    2018-03-01

    The growth and microscopic characterization of two-dimensional germania films is presented. Germanium oxide monolayer films were grown on Ru(0001) by physical vapor deposition and subsequent annealing in oxygen. We obtain a comprehensive image of the germania film structure by combining intensity-voltage low-energy electron diffraction (I/V-LEED) and ab initio density functional theory (DFT) analysis with atomic-resolution scanning tunneling microscopy (STM) imaging. For benchmarking purposes, the bare Ru(0001) substrate and the (2 ×2 )3 O covered Ru(0001) were analyzed with I/V-LEED with respect to previous reports. STM topographic images of the germania film reveal a hexagonal network where the oxygen and germanium atom positions appear in different imaging contrasts. For quantitative LEED, the best agreement has been achieved with DFT structures where the germanium atoms are located preferentially on the top and fcc hollow sites of the Ru(0001) substrate. Moreover, in these atomically flat germania films, local site geometries, i.e., tetrahedral building blocks, ring structures, and domain boundaries, have been identified, indicating possible pathways towards two-dimensional amorphous networks.

  7. Analysis of deuterium in V-Fe5at.% film by atom probe tomography (APT)

    International Nuclear Information System (INIS)

    Gemma, R.; Al-Kassab, T.; Kirchheim, R.; Pundt, A.

    2011-01-01

    Research highlights: → Deuterium distribution in V-Fe thin film was investigated by atom probe tomography. → Correct analysis was possible at analysis temperatures below 30 K. → Inhomogeneous distribution of D atoms was nevertheless observed. → This was interpreted by trapping effect at misfit dislocation. → Atom probe analysis provides detailed information on local chemistry of M-D system. - Abstract: V-Fe5at.% 2 and 10-nm thick single layered films were prepared by ion beam sputtering on W substrate. They were loaded with D from gas phase at 0.2 Pa and at 1 Pa, respectively. Both lateral and depth D distribution of these films was investigated in detail by atom probe tomography. The results of analysis are in good agreement between the average deuterium concentration and the value, expected from electromotive force measurement on a similar flat film. An enrichment of deuterium at the V/W interface was observed for both films. The origin of this D-accumulation was discussed in respect to electron transfer, mechanical stress and misfit dislocations.

  8. Structure of ordered polyelectrolyte films from atomic-force microscopy and X-ray reflectivity data

    International Nuclear Information System (INIS)

    Belyaev, V.V.; Tolstikhina, A.L.; Stepina, N.D.; Kayushina, R.L.

    1998-01-01

    The possible application of atomic-force microscopy and X-ray reflectometry methods to structural studies of polyelectrolyte films obtained due to alternating adsorption of oppositely charged polyanion [sodium polysterenesulfonate (PSS)] and polycation [poly(allylamine) hydrochloride (PAA)] layers on solid substrates has been considered. The atomic-force microscopy study has revealed the characteristic features of the surface topography of samples consisting of different numbers of polyelectrolyte layers deposited from solutions characterized by different ionic strength values. It is shown that the shape of the reflectivity curves obtained from thin polyelectrolyte films depends on their surface structure

  9. Thickness dependent growth of low temperature atomic layer deposited zinc oxide films

    International Nuclear Information System (INIS)

    Montiel-González, Z.; Castelo-González, O.A.; Aguilar-Gama, M.T.; Ramírez-Morales, E.; Hu, H.

    2017-01-01

    Highlights: • Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures. • Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films. • Higher temperature originates larger refractive index values of the ALD ZnO films. • ZnO thin films were denser as the numbers of ALD deposition cycles were larger. • XPS analysis revels mayor extent of the DEZ reaction during the ALD process. - Abstract: Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.

  10. Direct observation of phase transition of GeSbTe thin films by Atomic Force Microscope

    Energy Technology Data Exchange (ETDEWEB)

    Yang Fei [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Zhang Rui; Geng Lei; Tong Liang; Xu Jun [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Su Weining; Yu Yao [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Ma Zhongyuan; Chen Kunji [National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2012-10-01

    Graphical abstract: Nano-sized marks on GST thin film were fabricated using Conductive-AFM (Atomic Force Microscope). The AFM morphology images show that the marks are ablated at the center and a raised ring surrounding it. Highlights: Black-Right-Pointing-Pointer Microstructure of GeSbTe thin films was characterized by XRD and AFM. Black-Right-Pointing-Pointer Annealing and applying electrical field can induce crystallization on thin film. Black-Right-Pointing-Pointer Conductive-AFM was used to modify the surface of GeSbTe thin film. - Abstract: GeSbTe (GST) thin films were deposited on quartz substrates using electron beam evaporation system and then annealed in nitrogen atmosphere at different temperatures, ranging from 20 Degree-Sign C to 300 Degree-Sign C. X-ray diffraction (XRD) and Atomic Force microscope (AFM) measurements were used to characterize the as-deposited and post-annealed thin films. Annealing treatment was found to induce changes on microstructure, surface roughness and grain size, indicating that with the increase of annealing temperature, the amorphous GST films first changed to face-centered-cubic (fcc) phase and then the stable hexagonal (hex) phase. Meanwhile, conductive-AFM (C-AFM) was used to produce crystallized GST dots on thin films. I-V spectroscopy results show that GST films can switch from amorphous state to crystalline state at threshold voltage. After switching, I-V curve exhibits ohmic characteristic, which is usually observed in crystallized GST films. By applying repeated I-V spectroscopies on the thin films, crystallized nuclei were observed. As the times of I-V spectroscopies increases, the area of written dots increases, and the center of the mark begin to ablate. The AFM images show that the shape of marks is an ablated center with a raised ring surrounding it.

  11. Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

    International Nuclear Information System (INIS)

    Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

    2005-01-01

    Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

  12. Modeling of thin films growth processes in the early stage for atoms with covalent bonds

    International Nuclear Information System (INIS)

    Tupik, V A; Margolin, V I; Su, Chu Trong

    2017-01-01

    Computer simulation for obtaining thin film’s growth process at an early stage with the proposed model of atoms with isotropic and anisotropic interactions been considered. Carrying out the procedure for analyzing the problem on the basis of the program being implemented, computer simulation of thin film growth processes has been carried out on several examples. The results of computer simulation of the growth process of thin film on a given substrate and an aggregate in a vacuum condition are shown. Some characteristic distributions of the obtained structure have been carried out to evaluate the proposed adequate model and to reflect the high complexity of thin films growth process. (paper)

  13. Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH3

    International Nuclear Information System (INIS)

    Kim, Hyo Kyeom; Kim, Ju Youn; Park, Jin Yong; Kim, Yang Do; Kim, Young Do; Jeon, Hyeong Tag; Kim, Won Mok

    2002-01-01

    TiN films were deposited by using the metalorganic atomic layer deposition (MOALD) method using tetrakis-dimethyl-amino-titanium (TDMAT) as the titanium precursor and ammonia (NH 3 ) as the reactant gas. Two saturated TiN film growth regions were observed in the temperature ranges from 175 and 190 .deg. C and from 200 and 210 .deg. C. TiN films deposited by the MOALD technique showed relatively lower carbon content than films deposited by metalorganic chemical vapor deposition (MOCVD) method. TiN films deposited at around 200 .deg. C under standard conditions showed the resistivity values as low as 500 μΩ-cm, which is about one order lower than the values for TiN films deposited by MOCVD using TDMAT or TDMAT with NH 3 . Also, the carbon incorporation and the resistivity were further decreased with increasing Ar purge time and flow rate. TiN films deposited at temperature below 300 .deg. C showed amorphous characteristics. TiN film deposited on contact holes, about 0.4-μm wide and 0.8-μm deep, by using the MOALD method showed excellent conformal deposition with almost 100% step coverage. This study demonstrates that the processing parameters need to be carefully controlled to optimize the film properties that the processing parameters need to be carefully controlled to optimize the film properties when using the ALD technique and that TiN films deposited by using the MOALD method exhibited excellent film properties compared to those of films deposited by using other CVD methods

  14. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Sammelselg, Väino; Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan

    2013-01-01

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H 2 SO 4 was studied. • Smallest etching rates of < 5 pm/s for TiO 2 , Al 2 O 3 , and Cr 2 O 3 were reached. • Highest etching rate of 2.8 nm/s for Al 2 O 3 was occurred. • Remarkable differences in etching of non- and crystalline films were observed

  15. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho

    2017-02-27

    Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

  16. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  17. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  18. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

    NARCIS (Netherlands)

    O'Donoghue, R.; Rechmann, J.; Aghaee, M.; Rogalla, D.; Becker, H.-W.; Creatore, M.; Wieck, A.D.; Devi, A.P.K.

    2017-01-01

    Herein we describe an efficient low temperature (60–160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga2O3) thin films using hexakis(dimethylamido)digallium [Ga(NMe2)3]2 with oxygen (O2) plasma on Si(100). The use of O2 plasma was found to have a significant

  20. Annihilation of positronium atoms confined in mesoporous and macroporous SiO2 films

    Science.gov (United States)

    Cooper, B. S.; Boilot, J.-P.; Corbel, C.; Guillemot, F.; Gurung, L.; Liszkay, L.; Cassidy, D. B.

    2018-05-01

    We report experiments in which positronium (Ps) atoms were created in thin, porous silica films containing isolated voids with diameters ranging from 5 to 75 nm. Ps lifetimes in the pore structures were measured directly via time-delayed laser excitation of 13S1→23PJ transitions. In a film containing 5-nm pores Ps was predominantly emitted into vacuum, with a small component of confined Ps with a lifetime of 75 ns also observed. In films with larger pores Ps atoms were not emitted into vacuum except from the film surface, and confined Ps lifetimes of ≈90 ns were measured with no dependence on the pore size. However, for such large pores, extended Tao-Eldrup (ETE)-type models predict Ps lifetimes close to the 142-ns vacuum value. Moreover, 13S1→23PJ excitation of Ps atoms inside the pores was found to result in annihilation and exhibited an extremely broad (≈10 THz) linewidth. We attribute these observations to a process in which nonthermal Ps atoms in the isolated voids become temporarily trapped in a series of surface states that dissociate following excitation. The occurrence of this mechanism is not necessarily apparent from ground-state Ps decay rates without some prior knowledge of the sample structure, and it precludes the application of ETE-type models as they do not take into account surface interactions other than pickoff annihilation.

  1. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured

  2. Stripping scattering of fast atoms on surfaces of metal-oxide crystals and ultrathin films

    International Nuclear Information System (INIS)

    Blauth, David

    2010-01-01

    In the framework of the present dissertation the interactions of fast atoms with surfaces of bulk oxides, metals and thin films on metals were studied. The experiments were performed in the regime of grazing incidence of atoms with energies of some keV. The advantage of this scattering geometry is the high surface sensibility and thus the possibility to determine the crystallographic and electronic characteristics of the topmost surface layer. In addition to these experiments, the energy loss and the electron emission induced by scattered projectiles was investigated. The energy for electron emission and exciton excitation on Alumina/NiAl(110) and SiO 2 /Mo(112) are determined. By detection of the number of projectile induced emitted electrons as function of azimuthal angle for the rotation of the target surface, the geometrical structure of atoms forming the topmost layer of different adsorbate films on metal surfaces where determined via ion beam triangulation. (orig.)

  3. MoS2 solid-lubricating film fabricated by atomic layer deposition on Si substrate

    Science.gov (United States)

    Huang, Yazhou; Liu, Lei; Lv, Jun; Yang, Junjie; Sha, Jingjie; Chen, Yunfei

    2018-04-01

    How to reduce friction for improving efficiency in the usage of energy is a constant challenge. Layered material like MoS2 has long been recognized as an effective surface lubricant. Due to low interfacial shear strengths, MoS2 is endowed with nominal frictional coefficient. In this work, MoS2 solid-lubricating film was directly grown by atomic layer deposition (ALD) on Si substrate using MoCl5 and H2S. Various methods were used to observe the grown MoS2 film. Moreover, nanotribological properties of the film were observed by an atomic force microscope (AFM). Results show that MoS2 film can effectively reduce the friction force by about 30-45% under different loads, indicating the huge application value of the film as a solid lubricant. Besides the interlayer-interfaces-sliding, the smaller capillary is another reason why the grown MoS2 film has smaller friction force than that of Si.

  4. Magnetic-film atom chip with 10 μm period lattices of microtraps for quantum information science with Rydberg atoms.

    Science.gov (United States)

    Leung, V Y F; Pijn, D R M; Schlatter, H; Torralbo-Campo, L; La Rooij, A L; Mulder, G B; Naber, J; Soudijn, M L; Tauschinsky, A; Abarbanel, C; Hadad, B; Golan, E; Folman, R; Spreeuw, R J C

    2014-05-01

    We describe the fabrication and construction of a setup for creating lattices of magnetic microtraps for ultracold atoms on an atom chip. The lattice is defined by lithographic patterning of a permanent magnetic film. Patterned magnetic-film atom chips enable a large variety of trapping geometries over a wide range of length scales. We demonstrate an atom chip with a lattice constant of 10 μm, suitable for experiments in quantum information science employing the interaction between atoms in highly excited Rydberg energy levels. The active trapping region contains lattice regions with square and hexagonal symmetry, with the two regions joined at an interface. A structure of macroscopic wires, cutout of a silver foil, was mounted under the atom chip in order to load ultracold (87)Rb atoms into the microtraps. We demonstrate loading of atoms into the square and hexagonal lattice sections simultaneously and show resolved imaging of individual lattice sites. Magnetic-film lattices on atom chips provide a versatile platform for experiments with ultracold atoms, in particular for quantum information science and quantum simulation.

  5. Magnetic-film atom chip with 10 μm period lattices of microtraps for quantum information science with Rydberg atoms

    Energy Technology Data Exchange (ETDEWEB)

    Leung, V. Y. F. [Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, PO Box 94485, 1090 GL Amsterdam (Netherlands); Complex Photonic Systems (COPS), MESA Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede (Netherlands); Pijn, D. R. M.; Schlatter, H.; Torralbo-Campo, L.; La Rooij, A. L.; Mulder, G. B.; Naber, J.; Soudijn, M. L.; Tauschinsky, A.; Spreeuw, R. J. C., E-mail: r.j.c.spreeuw@uva.nl [Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, PO Box 94485, 1090 GL Amsterdam (Netherlands); Abarbanel, C.; Hadad, B.; Golan, E. [Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Be' er Sheva 84105 (Israel); Folman, R. [Department of Physics and Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Be' er Sheva 84105 (Israel)

    2014-05-15

    We describe the fabrication and construction of a setup for creating lattices of magnetic microtraps for ultracold atoms on an atom chip. The lattice is defined by lithographic patterning of a permanent magnetic film. Patterned magnetic-film atom chips enable a large variety of trapping geometries over a wide range of length scales. We demonstrate an atom chip with a lattice constant of 10 μm, suitable for experiments in quantum information science employing the interaction between atoms in highly excited Rydberg energy levels. The active trapping region contains lattice regions with square and hexagonal symmetry, with the two regions joined at an interface. A structure of macroscopic wires, cutout of a silver foil, was mounted under the atom chip in order to load ultracold {sup 87}Rb atoms into the microtraps. We demonstrate loading of atoms into the square and hexagonal lattice sections simultaneously and show resolved imaging of individual lattice sites. Magnetic-film lattices on atom chips provide a versatile platform for experiments with ultracold atoms, in particular for quantum information science and quantum simulation.

  6. Analysis of deuterium in V-Fe5at.% film by atom probe tomography (APT)

    KAUST Repository

    Gemma, Ryota

    2011-09-01

    V-Fe5at.% 2 and 10-nm thick single layered films were prepared by ion beam sputtering on W substrate. They were loaded with D from gas phase at 0.2 Pa and at 1 Pa, respectively. Both lateral and depth D distribution of these films was investigated in detail by atom probe tomography. The results of analysis are in good agreement between the average deuterium concentration and the value, expected from electromotive force measurement on a similar flat film. An enrichment of deuterium at the V/W interface was observed for both films. The origin of this D-accumulation was discussed in respect to electron transfer, mechanical stress and misfit dislocations. © 2010 Elsevier B.V. All rights reserved.

  7. Atom beam sputtered Ag-TiO{sub 2} plasmonic nanocomposite thin films for photocatalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jaspal; Sahu, Kavita [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India); Pandey, A. [Solid State Physics Laboratory, Defence Research and Development Organization, Timarpur, Delhi 110054 (India); Kumar, Mohit [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Ghosh, Tapas; Satpati, B. [Saha Institute of Nuclear Physics, HBNI, 1/AF, Bidhannagar, Kolkata 700064 (India); Som, T.; Varma, S. [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Avasthi, D.K. [Amity Institute of Nanotechnology, Noida 201313, Uttar Pradesh (India); Mohapatra, Satyabrata, E-mail: smiuac@gmail.com [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India)

    2017-07-31

    The development of nanocomposite coatings with highly enhanced photocatalytic activity is important for photocatalytic purification of water and air. We report on the synthesis of Ag-TiO{sub 2} nanocomposite thin films with highly enhanced photocatalytic activity by atom beam co-sputtering technique. The effects of Ag concentration on the structural, morphological, optical, plasmonic and photocatalytic properties of the nanocomposite thin films were investigated. UV–visible DRS studies revealed the presence of surface plasmon resonance (SPR) peak characteristic of Ag nanoparticles together with the excitonic absorption peak originating from TiO{sub 2} nanoparticles in the nanocomposites. XRD studies showed that the nanocomposite thin films consist of Ag nanoparticles and rutile TiO{sub 2} nanoparticles. The synthesized Ag-TiO{sub 2} nanocomposite thin films with 5 at% Ag were found to exhibit highly enhanced photocatalytic activity for sun light driven photocatalytic degradation of methylene blue in water, indicating their potential application in water purification.

  8. UV protective zinc oxide coating for biaxially oriented polypropylene packaging film by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lahtinen, Kimmo, E-mail: kimmo.lahtinen@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Kääriäinen, Tommi, E-mail: tommi.kaariainen@colorado.edu [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Johansson, Petri, E-mail: petri.johansson@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Kotkamo, Sami, E-mail: sami.kotkamo@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Maydannik, Philipp, E-mail: philipp.maydannik@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Seppänen, Tarja, E-mail: tarja.seppanen@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Kuusipalo, Jurkka, E-mail: jurkka.kuusipalo@tut.fi [Paper Converting and Packaging Technology, Tampere University of Technology, P.O.Box 589, FI-33101 Tampere (Finland); Cameron, David C., E-mail: david.cameron@miktech.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland)

    2014-11-03

    Biaxially oriented polypropylene (BOPP) packaging film was coated with zinc oxide (ZnO) coatings by atomic layer deposition (ALD) in order to protect the film from UV degradation. The coatings were made at a process temperature of 100 °C using diethylzinc and water as zinc and oxygen precursors, respectively. The UV protective properties of the coatings were tested by using UV–VIS and infrared spectrometry, differential scanning calorimetry (DSC) and a mechanical strength tester, which characterised the tensile and elastic properties of the film. The results obtained with 36 and 67 nm ZnO coatings showed that the ZnO UV protective layer is able to provide a significant decrease in photodegradation of the BOPP film under UV exposure. While the uncoated BOPP film suffered a complete degradation after a 4-week UV exposure, the 67 nm ZnO coated BOPP film was able to preserve half of its original tensile strength and 1/3 of its elongation at break after a 6-week exposure period. The infrared analysis and DSC measurements further proved the UV protection of the ZnO coatings. The results show that a nanometre scale ZnO coating deposited by ALD is a promising option when a transparent UV protection layer is sought for polymer substrates. - Highlights: • Atomic layer deposited zinc oxide coatings were used as UV protection layers. • Biaxially oriented polypropylene (BOPP) film was well protected against UV light. • Formation of UV degradation products in BOPP was significantly reduced. • Mechanical properties of the UV exposed BOPP film were significantly improved.

  9. Local, atomic-level elastic strain measurements of metallic glass thin films by electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Ebner, C. [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria); Sarkar, R. [Department of Materials Science and Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Rajagopalan, J. [Department of Materials Science and Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Department of Mechanical and Aerospace Engineering, School for Engineering of Matter Transport and Energy, Arizona State University, Tempe 85287 (United States); Rentenberger, C., E-mail: christian.rentenberger@univie.ac.at [Physics of Nanostructured Materials, Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Vienna (Austria)

    2016-06-15

    A novel technique is used to measure the atomic-level elastic strain tensor of amorphous materials by tracking geometric changes of the first diffuse ring of selected area electron diffraction patterns (SAD). An automatic procedure, which includes locating the centre and fitting an ellipse to the diffuse ring with sub-pixel precision is developed for extracting the 2-dimensional strain tensor from the SAD patterns. Using this technique, atomic-level principal strains from micrometre-sized regions of freestanding amorphous Ti{sub 0.45}Al{sub 0.55} thin films were measured during in-situ TEM tensile deformation. The thin films were deformed using MEMS based testing stages that allow simultaneous measurement of the macroscopic stress and strain. The calculated atomic-level principal strains show a linear dependence on the applied stress, and good correspondence with the measured macroscopic strains. The calculated Poisson’s ratio of 0.23 is reasonable for brittle metallic glasses. The technique yields a strain accuracy of about 1×10{sup −4} and shows the potential to obtain localized strain profiles/maps of amorphous thin film samples. - Highlights: • A TEM method to measure elastic strain in metallic glass films is proposed. • Method is based on tracking geometric changes in TEM diffraction patterns. • An automatic procedure is developed for extracting the local strain tensor. • Atomic-level strain in amorphous TiAl film was analysed during in-situ deformation. • Capability of the method to obtain micrometer scale strain profiles/maps is shown.

  10. Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

    Science.gov (United States)

    Lee, No Ho; Yoon, Seong Yu; Kim, Dong Ha; Kim, Seong Keun; Choi, Byung Joon

    2017-07-01

    Improving the energy harvesting efficiency of triboelectric generators (TEGs) requires exploring new types of materials that can be used, and understanding their properties. In this study, we have investigated semiconducting SnO2 thin films as friction layers in TEGs, which has not been explored thus far. Thin films of SnO2 with various thicknesses were grown by atomic layer deposition on Si substrates. Either polymer or glass was used as counter friction layers. Vertical contact/separation mode was utilized to evaluate the TEG efficiency. The results indicate that an increase in the SnO2 film thickness from 5 to 25 nm enhances the triboelectric output voltage of the TEG. Insertion of a 400-nm-thick Pt sub-layer between the SnO2 film and Si substrate further increased the output voltage up to 120 V in a 2 cm × 2 cm contact area, while the enhancement was cancelled out by inserting a 10-nm-thick insulating Al2O3 film between SnO2 and Pt films. These results indicate that n-type semiconducting SnO2 films can provide triboelectric charge to counter-friction layers in TEGs.[Figure not available: see fulltext.

  11. Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

    2008-06-02

    Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

  12. Contact stiffness and damping of liquid films in dynamic atomic force microscope

    International Nuclear Information System (INIS)

    Xu, Rong-Guang; Leng, Yongsheng

    2016-01-01

    The mechanical properties and dissipation behaviors of nanometers confined liquid films have been long-standing interests in surface force measurements. The correlation between the contact stiffness and damping of the nanoconfined film is still not well understood. We establish a novel computational framework through molecular dynamics (MD) simulation for the first time to study small-amplitude dynamic atomic force microscopy (dynamic AFM) in a simple nonpolar liquid. Through introducing a tip driven dynamics to mimic the mechanical oscillations of the dynamic AFM tip-cantilever assembly, we find that the contact stiffness and damping of the confined film exhibit distinct oscillations within 6-7 monolayer distances, and they are generally out-of-phase. For the solid-like film with integer monolayer thickness, further compression of the film before layering transition leads to higher stiffness and lower damping, while much lower stiffness and higher damping occur at non-integer monolayer distances. These two alternating mechanisms dominate the mechanical properties and dissipation behaviors of simple liquid films under cyclic elastic compression and inelastic squeeze-out. Our MD simulations provide a direct picture of correlations between the structural property, mechanical stiffness, and dissipation behavior of the nanoconfined film.

  13. Contact stiffness and damping of liquid films in dynamic atomic force microscope

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Rong-Guang; Leng, Yongsheng, E-mail: leng@gwu.edu [Department of Mechanical and Aerospace Engineering, The George Washington University, Washington, DC 20052 (United States)

    2016-04-21

    The mechanical properties and dissipation behaviors of nanometers confined liquid films have been long-standing interests in surface force measurements. The correlation between the contact stiffness and damping of the nanoconfined film is still not well understood. We establish a novel computational framework through molecular dynamics (MD) simulation for the first time to study small-amplitude dynamic atomic force microscopy (dynamic AFM) in a simple nonpolar liquid. Through introducing a tip driven dynamics to mimic the mechanical oscillations of the dynamic AFM tip-cantilever assembly, we find that the contact stiffness and damping of the confined film exhibit distinct oscillations within 6-7 monolayer distances, and they are generally out-of-phase. For the solid-like film with integer monolayer thickness, further compression of the film before layering transition leads to higher stiffness and lower damping, while much lower stiffness and higher damping occur at non-integer monolayer distances. These two alternating mechanisms dominate the mechanical properties and dissipation behaviors of simple liquid films under cyclic elastic compression and inelastic squeeze-out. Our MD simulations provide a direct picture of correlations between the structural property, mechanical stiffness, and dissipation behavior of the nanoconfined film.

  14. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    Energy Technology Data Exchange (ETDEWEB)

    Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Ikeshoji, Tamio; Orimo, Shin-ichi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  15. Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Shih, Huan-Yu; Chen, Miin-Jang; Lin, Ming-Chih; Chen, Liang-Yih

    2015-01-01

    The growth of uniform gallium nitride (GaN) thin films was reported on (100) Si substrate by remote plasma atomic layer deposition (RP-ALD) using triethylgallium (TEG) and NH 3 as the precursors. The self-limiting growth of GaN was manifested by the saturation of the deposition rate with the doses of TEG and NH 3 . The increase in the growth temperature leads to the rise of nitrogen content and improved crystallinity of GaN thin films, from amorphous at a low deposition temperature of 200 °C to polycrystalline hexagonal structures at a high growth temperature of 500 °C. No melting-back etching was observed at the GaN/Si interface. The excellent uniformity and almost atomic flat surface of the GaN thin films also infer the surface control mode of the GaN thin films grown by the RP-ALD technique. The GaN thin films grown by RP-ALD will be further applied in the light-emitting diodes and high electron mobility transistors on (100) Si substrate. (paper)

  16. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    International Nuclear Information System (INIS)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-01-01

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al 2 O 3 substrates indicated polycrystalline films with a LiAlO 2 secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides

  17. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    Science.gov (United States)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  18. The Atoms for Peace USIS Films: Spreading the Gospel of the "Blessing" of Atomic Energy in the Early Cold War Era

    Directory of Open Access Journals (Sweden)

    Yuka Tsuchiya

    2014-08-01

    Full Text Available In 1955, the U.S. Information Service (USIS Tokyo produced a thirty-minute documentary film Blessing of Atomic Energy in commemoration of the tenth anniversary of the Atomic bombing of Hiroshima and Nagasaki. The film introduced how the Japanese government, researchers, and companies were using radioisotopes offered by the U.S. Argonne National Laboratory for the “peaceful” purposes in agriculture, medicine, hygiene, industry, and disaster prevention. The film also showed the mechanism of atomic power generation, and explained that it was already put into practice in the U.S. and Europe. The images of Japanese people enjoying the “blessing” of the “peaceful” use of atomic energy, ten years after the traumatic experience of A-bombs, were not only shown all over Japan, but also translated into different languages and shown in many countries, including the UK, Finland, Indonesia, Sudan, and Venezuela. The film was part of some fifty educational and documentary films produced for President Eisenhower’s “Atoms for Peace” campaign – a global information dissemination programs on the U.S. leadership in the civilian use of nuclear energy. This paper will explore the roles USIS films played in disseminating information on the “peaceful” use of nuclear energy in the early Cold War era.

  19. Characterization of cobalt oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Louardi, A.; Rmili, A.; Ouachtari, F.; Bouaoud, A. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco)

    2011-09-15

    Highlights: > Co{sub 3}O{sub 4} thin films show a micro porous structure. > Co{sub 3}O{sub 4} thin films are formed with spherical grains less than 50 nm in diameter. > The porous structure of Co{sub 3}O{sub 4} films is expected to have promising application in electrochromism. - Abstract: Cobalt oxide (Co{sub 3}O{sub 4}) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of hydrated cobalt chloride salt (CoCl{sub 2}.6H{sub 2}O) as source of cobalt. The films were deposited onto the amorphous glass substrates kept at different temperatures (300-500 deg. C). The influences of molar concentration of the starting solution and substrate temperature on the structural, morphological and optical properties of (Co{sub 3}O{sub 4}) thin films were studied. It was found from X-ray diffraction (XRD) analysis that the films prepared with molar concentration greater than 0.025 M/L were polycrystalline spinel type cubic structure. The preferred orientation of the crystallites of these films changes gradually from (6 2 2) to (1 1 1) when the substrate temperature increases. By Raman spectroscopy, five Raman active modes characteristic of Co{sub 3}O{sub 4} spinel type cubic structure were found and identified at 194, 484, 522, 620 and 691 cm{sup -1}. The scanning electron microscopy (SEM) images showed micro porous structure with very fine grains less than 50 nm in diameter. These films exhibited also a transmittance value of about 70% in the visible and infra red range.

  20. Atomistic kinetic Monte Carlo study of atomic layer deposition derived from density functional theory.

    Science.gov (United States)

    Shirazi, Mahdi; Elliott, Simon D

    2014-01-30

    To describe the atomic layer deposition (ALD) reactions of HfO2 from Hf(N(CH3)2)4 and H2O, a three-dimensional on-lattice kinetic Monte-Carlo model is developed. In this model, all atomistic reaction pathways in density functional theory (DFT) are implemented as reaction events on the lattice. This contains all steps, from the early stage of adsorption of each ALD precursor, kinetics of the surface protons, interaction between the remaining precursors (steric effect), influence of remaining fragments on adsorption sites (blocking), densification of each ALD precursor, migration of each ALD precursors, and cooperation between the remaining precursors to adsorb H2O (cooperative effect). The essential chemistry of the ALD reactions depends on the local environment at the surface. The coordination number and a neighbor list are used to implement the dependencies. The validity and necessity of the proposed reaction pathways are statistically established at the mesoscale. The formation of one monolayer of precursor fragments is shown at the end of the metal pulse. Adsorption and dissociation of the H2O precursor onto that layer is described, leading to the delivery of oxygen and protons to the surface during the H2O pulse. Through these processes, the remaining precursor fragments desorb from the surface, leaving the surface with bulk-like and OH-terminated HfO2, ready for the next cycle. The migration of the low coordinated remaining precursor fragments is also proposed. This process introduces a slow reordering motion (crawling) at the mesoscale, leading to the smooth and conformal thin film that is characteristic of ALD. Copyright © 2013 Wiley Periodicals, Inc.

  1. Measurements of recombination coefficient of hydrogen atoms on plasma deposited thin films

    International Nuclear Information System (INIS)

    Drenik, A.; Vesel, A.; Mozetic, M.

    2006-01-01

    We have performed experiments in plasma afterglow in order to determine the recombination coefficients of plasma deposited thin films of tungsten and graphite. Plasma deposited films rather than bulk material were used in order to more closely emulate surface structure of plasma-facing material deposits in fusion reactors. We have also determined the recombination coefficient of 85250 borosilicate glass and Teflon. Plasma was created by means of a radio frequency generator in a mixture of argon and hydrogen at the pressures between 60 Pa and 280 Pa. The degree of dissociation of hydrogen molecules was found to be between 0.1 and 1. The H-atom density was measured by Fiber Optic Catalytic Probe. The recombination coefficient was determined by measuring the axial profile of the H-atom density and using Smith's side arm diffusion model. (author)

  2. Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

    Science.gov (United States)

    Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

    2017-10-01

    We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE and the Japan Society of Applied Physics. Dr. Hiramoto is a fellow of Japan Society of Applied Physics and a member of IEEE and IEICE. He served as the General Chair of Silicon Nanoelectronics Workshop in 2003 and the Program Chair in 1997, 1999, and 2001. He was on Committee of IEDM from 2003 to 2009. He was the Program Chair of Symposium on VLSI Technology in 2013 and was the General Chair in 2015. He is the Program Chair of International Conference on Solid-State Devices and Materials (SSDM) in 2016.

  3. Studies of the hyperfine interaction in semiconducting or isolating oxides on the examples HfO2, Ga2O3, and Al2O3

    International Nuclear Information System (INIS)

    Steffens, Michael

    2014-01-01

    On the example of the three oxide compounds of the hafnium, gallium, and aluminium among others the method of the perturbed γ-γ angular correlation (PAC) was applied in dependence on the sample temperature. Applied were thereby the PAC probe nuclei 111 Cd and 181 Ga, which were inserted in the samples by ion implantation or proced by neutron activation in the samples. In HfO 2 thereby especially the hyperfine interaction of thin layers with thicknesses from 2.7 to 17 nm and 100 nm were studied. Strongly disagreeing field gradients and a great influence of the sample surface on the measurement are shown. It could be shown that ν qO x should scale with the layer thickness of the oxide and that the temperature-dependent behaviour, which is influenced by the thermal expansion of the lattice, underlies also this scaling. Conditioned by the neighbourhood to the surface at high temperature oxygen can escape from the samples and so degrade the oxide. The studied Ga 2 O 3 layers were produced by oxidation of GaN at 1223 K in air. The structure of the oxide layer was thereby stepwise pursued with the PAC and could be modelled with an exponential time dependence. The oxidation was repeated with several samples at equal absolute oxidation time but different partition in intermediate steps. Altogether the result were shown as reproducable, the occuring differences of the hyperfine interactions are probably given by external quantities fluctuating in the oxidation. The measurement of the Al 2 O 3 sample in the PAC furnace and cryostat represents mainly a reproduction of the preceding experiments of Penner et al. In this materials the attempt held the spotlight to manipulate the temperature-dependent behaviour of the hyperfine interaction by additional doping. Over the experiments of the single materials was set the more precise consideration of dynamic hyperfine interactions on the probe nucleus 111 Cd. In the spin-correlation functions R(t) these were manifested by an extraordinarily strong damping of the spectra by an additional interaction. In all three materials in could be shown, that these occur not on other proble nuclei like 181 Ta (HfO 2 ,Ga 2 O 3 ) or the EC-less decay on the 111m Cd( 111 Cd) (Al 2 O 3 ).

  4. Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Hu, Shen; Ekerdt, John G.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al 2 O 3 and HfO 2 . However, there has been much effort to deposit ternary oxides, such as perovskites (ABO 3 ), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable

  5. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  6. Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Zhou Kai

    2010-01-01

    Full Text Available Abstract The structure of vertically aligned carbon nanotubes (CNTs severely depends on the properties of pre-prepared catalyst films. Aiming for the preparation of precisely controlled catalyst film, atomic layer deposition (ALD was employed to deposit uniform Fe2O3 film for the growth of CNT arrays on planar substrate surfaces as well as the curved ones. Iron acetylacetonate and ozone were introduced into the reactor alternately as precursors to realize the formation of catalyst films. By varying the deposition cycles, uniform and smooth Fe2O3 catalyst films with different thicknesses were obtained on Si/SiO2 substrate, which supported the growth of highly oriented few-walled CNT arrays. Utilizing the advantage of ALD process in coating non-planar surfaces, uniform catalyst films can also be successfully deposited onto quartz fibers. Aligned few-walled CNTs can be grafted on the quartz fibers, and they self-organized into a leaf-shaped structure due to the curved surface morphology. The growth of aligned CNTs on non-planar surfaces holds promise in constructing hierarchical CNT architectures in future.

  7. Characterization of MHPPV films by atomic force and Brewster angle microscopy

    International Nuclear Information System (INIS)

    Mello, S.V.; Bianchi, R.F.; Balogh, D.T.; Oliveira Junior, O.N.; Faria, R.M.

    1999-01-01

    We report on the characterization of MHPPV film morphology using Atomic Force Microscopy (AFM) and Brewster Angle Microscopy (BAM) with films deposited by spin coating and casting onto solid substrates such as glass, glass/indium tin oxide (ITO) and quartz. MH-PPV was synthesized according to standard routes, and its properties - obtained from UV-vis. Fourier Transform infrared and Nuclear Magnetic resonance spectroscopy, and high performance size exclusion chromatography - are essentially the same as reported in the literature. From BAM images no significant difference could be observed when comparing cast and spin coated films, since all samples appeared homogeneous under the conditions adopted. Major differences, however, were observed by AFM in the contact mode, especially in roughness values. For a range of temperatures, from 22 deg C up to the transition glass temperature (Tg) of the polymer (ca. 160 deg C), the mean roughness lied in the range 3-5 nm for spin coated films, while for cast films it was 4-10 nm. Samples treated at temperatures above 100 deg C appeared more compact and in all cases the film appeared soft to some extend, which could be the result of the conditions employed. (author)

  8. Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

    International Nuclear Information System (INIS)

    Kim, Soo-Hyun; Oh, Su Suk; Kim, Ki-Bum; Kang, Dae-Hwan; Li, Wei-Min; Haukka, Suvi; Tuominen, Marko

    2003-01-01

    The properties of WN x C y films deposited by atomic layer deposition (ALD) using WF 6 , NH 3 , and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 μΩ cm with a film density of 15.37 g/cm 3 . The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of ∼48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both β-WC 1-x and β-W 2 N with an equiaxed microstructure. The barrier property of this ALD-WN x C y film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 deg. C for 30 min

  9. Linear Coefficient of Thermal Expansion of Porous Anodic Alumina Thin Films from Atomic Force Microscopy

    OpenAIRE

    Zhang, Richard X; Fisher, Timothy; Raman, Arvind; Sands, Timothy D

    2009-01-01

    In this article, a precise and convenient technique based on the atomic force microscope (AFM) is developed to measure the linear coefficient of thermal expansion of a porous anodic alumina thin film. A stage was used to heat the sample from room temperature up to 450 K. Thermal effects on AFM probes and different operation modes at elevated temperatures were also studied, and a silicon AFM probe in the tapping mode was chosen for the subsequent measurements due to its temperature insensitivi...

  10. Chemical reaction of atomic oxygen with evaporated films of copper, part 4

    Science.gov (United States)

    Fromhold, A. T.; Williams, J. R.

    1990-01-01

    Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

  11. Chemical environment of iron atoms in iron oxynitride films synthesized by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Grafoute, M.; Petitjean, C.; Rousselot, C.; Pierson, J.F.; Greneche, J.M.

    2007-01-01

    An iron oxynitride film was deposited on silicon and glass substrates by magnetron sputtering in an Ar-N 2 -O 2 reactive mixture. Rutherford back-scattering spectrometry was used to determine the film composition (Fe 1.06 O 0.35 N 0.65 ). X-ray diffraction revealed the formation of a face-centred cubic (fcc) structure with a lattice parameter close to that of γ'''-FeN. X-ray photoelectron spectroscopy showed the occurrence of Fe-N and Fe-O bonds in the film. The local environment of iron atoms studied by 57 Fe Moessbauer spectrometry at both 300 and 77 K gives clear evidence that the Fe 1.06 O 0.35 N 0.65 is not a mixture of iron oxide and iron nitride phases. Despite a small amount of an iron nitride phase, the main sample consists of an iron oxynitride phase with an NaCl-type structure where oxygen atoms partially substitute for nitrogen atoms, thus indicating the formation of a iron oxynitride with an fcc structure

  12. Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

    Science.gov (United States)

    Zhang, P.; Sun, C. H.; Zhang, Y.; Chen, X.; He, K.; Chen, Y. Y.; Ye, Z. H.

    2015-06-01

    Thermal stability of Atomic Layer Deposition Al2O3 film on HgCdTe was investigated by Al2O3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al2O3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

  13. Low-temperature atomic layer deposition of MoS{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Jurca, Titel; Wang, Binghao; Tan, Jeffrey M.; Lohr, Tracy L.; Marks, Tobin J. [Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL (United States); Moody, Michael J.; Henning, Alex; Emery, Jonathan D.; Lauhon, Lincoln J. [Department of Materials Science and Engineering, and the Materials Research Center, Northwestern University, Evanston, IL (United States)

    2017-04-24

    Wet chemical screening reveals the very high reactivity of Mo(NMe{sub 2}){sub 4} with H{sub 2}S for the low-temperature synthesis of MoS{sub 2}. This observation motivated an investigation of Mo(NMe{sub 2}){sub 4} as a volatile precursor for the atomic layer deposition (ALD) of MoS{sub 2} thin films. Herein we report that Mo(NMe{sub 2}){sub 4} enables MoS{sub 2} film growth at record low temperatures - as low as 60 C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Atomic layer deposition of Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  15. Quantitative measurement of local elasticity of SiOx film by atomic force acoustic microscopy

    International Nuclear Information System (INIS)

    Cun-Fu, He; Gai-Mei, Zhang; Bin, Wu

    2010-01-01

    In this paper the elastic properties of SiO x film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy (AFAM) in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements. The SiO x films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition (PECVD). The local contact stiffness of the tip-SiO x film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy. Using the reference approach, indentation modulus of SiO x film for fixed point is obtained. The images of cantilever amplitude are also visualized and analysed when the SiO x surface is excited at a fixed frequency. The results show that the acoustic amplitude images can reflect the elastic properties of the sample. (classical areas of phenomenology)

  16. Nitrogen doping in atomic layer deposition grown titanium dioxide films by using ammonium hydroxide

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaeriaeinen, M.-L., E-mail: marja-leena.kaariainen@lut.fi; Cameron, D.C.

    2012-12-30

    Titanium dioxide films have been created by atomic layer deposition using titanium chloride as the metal source and a solution of ammonium hydroxide in water as oxidant. Ammonium hydroxide has been used as a source of nitrogen for doping and three thickness series have been deposited at 350 Degree-Sign C. A 15 nm anatase dominated film was found to possess the highest photocatalytic activity in all film series. Furthermore almost three times better photocatalytic activity was discovered in the doped series compared to undoped films. The doped films also had lower resistivity. The results from X-ray photoemission spectroscopy showed evidence for interstitial nitrogen in the titanium dioxide structure. Besides, there was a minor red shift observable in the thickest samples. In addition the film conductivity was discovered to increase with the feeding pressure of ammonium hydroxide in the oxidant precursor. This may indicate that nitrogen doping has caused the decrease in the resistivity and therefore has an impact as an enhanced photocatalytic activity. The hot probe test showed that all the anatase or anatase dominant films were p-type and all the rutile dominant films were n-type. The best photocatalytic activity was shown by anatase-dominant films containing a small amount of rutile. It may be that p-n-junctions are formed between p-type anatase and n-type rutile which cause carrier separation and slow down the recombination rate. The combination of nitrogen doping and p-n junction formation results in superior photocatalytic performance. - Highlights: Black-Right-Pointing-Pointer We found all N-doped and undoped anatase dominating films p-type. Black-Right-Pointing-Pointer We found all N-doped and undoped rutile dominating films n-type. Black-Right-Pointing-Pointer We propose that p-n junctions are formed in anatase-rutile mixture films. Black-Right-Pointing-Pointer We found that low level N-doping has increased TiO{sub 2} conductivity. Black

  17. Design of Rotary Atomizer Using Characteristics of Thin Film Flow on Solid Surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Park, Boo Seong; Kim, Bo Hung [Univ. of Ulsan, Ulsan (Korea, Republic of)

    2013-12-15

    A disc-type rotary atomizer affords advantages such as superior paint transfer efficiency, uniformity of paint pattern and particle size, and less consumption of compressed air compared to a spray-gun-type atomizer. Furthermore, it can be applied to all types of painting materials, and it is suitable for large-scale processes such as car painting. The painting quality, which is closely related to the atomizer performance, is determined by the uniformity and droplet size in accordance with the design of the bell disc surface. This study establishes the basics of how to design a surface by modeling the operating bell disc's RPM, diameter, surface angle, and film thickness considering dye characteristics such as the viscosity, density, and surface affinity.

  18. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  19. Near-room temperature deposition of W and WO3 thin films by hydrogen atom assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Lee, W.W.; Reeves, R.R.

    1992-01-01

    A novel near-room temperatures CVD process has been developed using H-atoms reaction with WF 6 to produced tungsten and tungsten oxide films. The chemical, physical and electrical properties of these films were studied. Good adhesion and low resistivity of W films were measured. Conformal WO 3 films were obtained on columnar tungsten using a small amount of molecular oxygen in the gas stream. A reaction mechanism was evaluated on the basis of experimental results. The advantages of the method include deposition of adherent films in a plasma-free environment, near-room temperature, with a low level of impurity

  20. Estimating the thickness of hydrated ultrathin poly(o-phenylenediamine) film by atomic force microscopy

    International Nuclear Information System (INIS)

    Wu, C.-C.; Chang, H.-C.

    2004-01-01

    A novel method to measure ultrathin poly(o-phenylenediamine) (PPD) film electropolymerized on gold electrode in liquid was developed. It is based on the force versus distance curve (force curve) of atomic force microscopy (AFM). When 1-0.25 μm/s was chosen as the rising rate of the scanner, and 50% of the confidence interval (CI) as the qualifying threshold value, the thickness of the hydrated polymer film could be calculated. This result was compared with one obtained from an AFM image. A step-like electrode fabricated by a photolithographic process was used. The height difference of the electrode before and after the PPD coating was imaged in liquid, and then the real thickness, 19.6±5.2 nm, was obtained. The sample was also measured by estimating the transition range of the force curve of hydrated PPD film, and the thickness of the hydrated PPD film was determined to be 19.3±8.2 nm. However, the results calculated by integrating the electropolymerized charge for the oxidation process of o-phenylenediamine (o-PD) was only one-third as large as it was when using the two previously described methods. This indicated that the structure of hydrated PPD film might have been swollen

  1. Structural and electrical evolution of He ion irradiated hydrocarbon films observed by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Fan, Hongyu; Yang, Deming; Sun, Li; Yang, Qi; Niu, Jinhai; Bi, Zhenhua; Liu, Dongping

    2013-01-01

    Polymer-like hydrocarbon films are irradiated with 100 keV He ion at the fluences of 1.0 × 10 15 –1.0 × 10 17 ions/cm 2 or at the irradiation temperature ranging from 25 to 600 °C. Conductive atomic force microscopy (CAFM) has been used to evaluate the nanoscale electron conducting properties of these irradiated hydrocarbon films. Nanoscale and conducting defects have been formed in the hydrocarbon films irradiated at a relatively high ion fluence (1.0 × 10 17 ions/cm 2 ) or an elevated sample temperature. Analysis indicates that He ion irradiation results in the evolution of polymer-like hydrocarbon into a dense structure containing a large fraction of sp 2 carbon clusters. The sp 2 carbon clusters formed in irradiated hydrocarbon films can contribute to the formation of filament-like conducting channels with a relatively high local field-enhancing factor. Measurements indicate that the growth of nanoscale defects due to He ion irradiation can result in the surface swelling of irradiated hydrocarbon films at a relatively high ion fluences or elevated temperature

  2. Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho, E-mail: bhchoi@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-707 (Korea, Republic of)

    2015-01-15

    ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

  3. Wet chemical deposition of single crystalline epitaxial manganite thin films with atomically flat surface

    International Nuclear Information System (INIS)

    Mishra, Amita; Dutta, Anirban; Samaddar, Sayanti; Gupta, Anjan K.

    2013-01-01

    We report the wet chemical deposition of single crystalline epitaxial thin films of the colossal magneto-resistive manganite La 0.67 Sr 0.33 MnO 3 on the lattice-matched (001)-face of a La 0.3 Sr 0.7 Al 0.65 Ta 0.35 O 3 substrate. Topographic images of these films taken with a scanning tunneling microscope show atomically flat terraces separated by steps of monatomic height. The resistivity of these films shows an insulator-metal transition at 310 K, nearly coincident with the Curie temperature of 340 K, found from magnetization measurements. The films show a magnetoresistance of 7% at 300 K and 1.2 T. Their saturation magnetization value at low temperatures is consistent with that of the bulk. - Highlights: ► Wet chemical deposition of La 0.67 Sr 0.33 MnO 3 (LSMO) on a lattice-matched substrate. ► Single crystalline epitaxial LSMO films obtained. ► Flat terraces separated by monatomic steps observed by scanning tunneling microscope

  4. Structural and electrical evolution of He ion irradiated hydrocarbon films observed by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Hongyu [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Yang, Deming [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Sun, Li [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Physics, Liaoning Normal University, Dalian 116023 (China); Yang, Qi; Niu, Jinhai; Bi, Zhenhua [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Liu, Dongping, E-mail: dongping.liu@dlnu.edu.cn [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electronic Science, Aeronautics, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

    2013-10-01

    Polymer-like hydrocarbon films are irradiated with 100 keV He ion at the fluences of 1.0 × 10{sup 15}–1.0 × 10{sup 17} ions/cm{sup 2} or at the irradiation temperature ranging from 25 to 600 °C. Conductive atomic force microscopy (CAFM) has been used to evaluate the nanoscale electron conducting properties of these irradiated hydrocarbon films. Nanoscale and conducting defects have been formed in the hydrocarbon films irradiated at a relatively high ion fluence (1.0 × 10{sup 17} ions/cm{sup 2}) or an elevated sample temperature. Analysis indicates that He ion irradiation results in the evolution of polymer-like hydrocarbon into a dense structure containing a large fraction of sp{sup 2} carbon clusters. The sp{sup 2} carbon clusters formed in irradiated hydrocarbon films can contribute to the formation of filament-like conducting channels with a relatively high local field-enhancing factor. Measurements indicate that the growth of nanoscale defects due to He ion irradiation can result in the surface swelling of irradiated hydrocarbon films at a relatively high ion fluences or elevated temperature.

  5. Substrate dependent morphologies of self-assembled nanocrystalline manganite films: An atomic force microscopy study

    International Nuclear Information System (INIS)

    Kale, S.N.; Mona, J.; Ganesan, V.; Choudhary, R.J.; Phase, D.M.

    2009-06-01

    Thin films of La 0 .7Sr 0 .3MnO 3 (LSMO) have been deposited on different substrates: Si (001), Al 2 O 3 (AlO) (0001) and LaAlO 3 (LAO) (001), using a pulsed laser deposition system. 100 nm films have been deposited at substrate temperature of 700 deg C and oxygen partial pressure of 400 mTorr. X-Ray diffraction analysis shows a polycrystalline growth of both layers on Si and Al 2 O 3 substrates, while a c-axis oriented growth on LAO substrate. Atomic force microscopy images exhibit interesting island-like morphology of grain size ∼ 250 nm on Si substrate. Similar morphology with much smaller (∼ 150 nm), closely packed islands are seen to grow on AlO substrate. Films on LAO show comparatively a smooth morphology with the grains size less than 100 nm, decorated by characteristic depressions at the grain boundaries. The formation of self-assembled nanostructures can be understood on the basis of film-substrate lattice misfit, strains in the systems and eventual growth of the films to attain energy minimization (author)

  6. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  7. Self-limiting atomic layer deposition of conformal nanostructured silver films

    International Nuclear Information System (INIS)

    Golrokhi, Zahra; Chalker, Sophia; Sutcliffe, Christopher J.; Potter, Richard J.

    2016-01-01

    Graphical abstract: - Highlights: • We grow metallic silver by direct liquid injection thermal atomic layer deposition. • Highly conformal silver nanoparticle coatings on high aspect ratio surfaces. • An ALD temperature growth window between 123 and 128 °C is established. • ALD cycles provides sub nanometre control of silver growth. • Catalytic dehydrogenation ALD mechanism has been elucidated by in-situ QCM. - Abstract: The controlled deposition of ultra-thin conformal silver nanoparticle films is of interest for applications including anti-microbial surfaces, plasmonics, catalysts and sensors. While numerous techniques can produce silver nanoparticles, few are able to produce highly conformal coatings on high aspect ratio surfaces, together with sub-nanometre control and scalability. Here we develop a self-limiting atomic layer deposition (ALD) process for the deposition of conformal metallic silver nanoparticle films. The films have been deposited using direct liquid injection ALD with ((hexafluoroacetylacetonato)silver(I)(1,5-cyclooctadiene)) and propan-1-ol. An ALD temperature window between 123 and 128 °C is identified and within this range self-limiting growth is confirmed with a mass deposition rate of ∼17.5 ng/cm"2/cycle. The effects of temperature, precursor dose, co-reactant dose and cycle number on the deposition rate and on the properties of the films have been systematically investigated. Under self-limiting conditions, films are metallic silver with a nano-textured surface topography and nanoparticle size is dependent on the number of ALD cycles. The ALD reaction mechanisms have been elucidated using in-situ quartz crystal microbalance (QCM) measurements, showing chemisorption of the silver precursor, followed by heterogeneous catalytic dehydrogenation of the alcohol to form metallic silver and an aldehyde.

  8. Preparation of high-content hexagonal boron nitride composite film and characterization of atomic oxygen erosion resistance

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Li, Min; Gu, Yizhuo; Wang, Shaokai, E-mail: wsk@buaa.edu.cn; Zhang, Zuoguang

    2017-04-30

    Highlights: • Hexagonal boron nitride nanosheets can be well exfoliated with the help of nanofibrillated cellulose. • A carpet-like rough surface and distortion in crystal structure of h-BN are found in both h-BN film and h-BN/epoxy film after AO exposure. • H-BN/epoxy film exhibits a higher mass loss and erosion yield, different element content changes and chemical oxidations compared with h-BN film. - Abstract: Space aircrafts circling in low earth orbit are suffered from highly reactive atomic oxygen (AO). To shield AO, a flexible thin film with 80 wt.% hexagonal boron nitride (h-BN) and h-BN/epoxy film were fabricated through vacuum filtration and adding nanofibrillated cellulose fibers. H-BN nanosheets were hydroxylated for enhancing interaction in the films. Mass loss and erosion yield at accumulated AO fluence about 3.04 × 10{sup 20} atoms/cm{sup 2} were adopted to evaluate the AO resistance properties of the films. A carpet-like rough surface, chemical oxidations and change in crystal structure of h-BN were found after AO treatment, and the degrading mechanism was proposed. The mass loss and erosion yield under AO attack were compared between h-BN film and h-BN/epoxy film, and the comparison was also done for various types of shielding AO materials. Excellent AO resistance property of h-BN film is shown, and the reasons are analyzed.

  9. Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ananda Sagari, A.R., E-mail: arsagari@gmail.com [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Malm, Jari [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Laitinen, Mikko [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Rahkila, Paavo [Department of Biology of Physical Activity, P.O. Box 35, FIN-40014 University of Jyväskylä (Finland); Hongqiang, Ma [Department of Health Sciences, P.O. Box 35 (L), FIN-40014 University of Jyväskylä (Finland); Putkonen, Matti [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Beneq Oy, P.O. Box 262, FI-01511 Vantaa (Finland); Karppinen, Maarit [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Whitlow, Harry J.; Sajavaara, Timo [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland)

    2013-03-01

    Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R{sub rms} values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on rough metal surfaces with a clear dependence of substrate roughness on the Ca/P atomic ratio of thin films. The in vitro cell-culture studies using MC3T3 mouse osteoblast showed a greater coverage of cells on the surface polished with diamond paste in comparison to rougher surfaces after 24 h culture. No statistically significant difference was observed between Ca–P–O coated and un-coated Ti surfaces for the measured roughness value. The deposited 50 nm thick films did not dissolve during the cell culture experiment. - Highlights: ► Atomic layer deposition of Ca–P–O films on abraded Ti substrate ► Surface analysis using Time-Of-Flight Elastic Recoil Detection Analysis ► Dependence of substrate roughness on the Ca/P atomic ratio of thin films ► An increase in Ca/P atomic ratio with decreasing roughness ► Mouse osteoblast showed greater coverage of cells in polished surface.

  10. Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films

    International Nuclear Information System (INIS)

    Yuan, Guangjie; Shimizu, Hideharu; Momose, Takeshi; Shimogaki, Yukihiro

    2014-01-01

    High-purity Ni films were deposited using hot-wire-assisted atomic layer deposition (HW-ALD) at deposition temperatures of 175, 250, and 350 °C. Negligible amount of nitrogen or carbon contamination was detected, even though the authors used NH 2 radical as the reducing agent and nickelocene as the precursor. NH 2 radicals were generated by the thermal decomposition of NH 3 with the assist of HW and used to reduce the adsorbed metal growth precursors. To understand and improve the deposition process, the kinetics of HW-ALD were analyzed using a Langmuir-type model. Unlike remote-plasma-enhanced atomic layer deposition, HW-ALD does not lead to plasma-induced damage. This is a significant advantage, because the authors can supply sufficient NH 2 radicals to deposit high-purity metallic films by adjusting the distance between the hot wire and the substrate. NH 2 radicals have a short lifetime, and it was important to use a short distance between the radical generation site and substrate. Furthermore, the impurity content of the nickel films was independent of the deposition temperature, which is evidence of the temperature-independent nature of the NH 2 radical flux and the reactivity of the NH 2 radicals

  11. Effects of layer sequence and postdeposition annealing temperature on performance of La2O3 and HfO2 multilayer composite oxides on In0.53Ga0.47As for MOS capacitor application

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chuang, Ting-Wei; Chen, Yu-Chen; Hou, Tzu-Ching; Yao, Jing-Neng; Chang, Po-Chun; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2014-03-01

    In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41 nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8% and an excellent Dit of 7.0 × 1011 cm-2·eV-1 can be achieved using multiple layers of La2O3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.

  12. Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques

    Energy Technology Data Exchange (ETDEWEB)

    Muhunthan, N.; Singh, Om Pal [Compound Semiconductor Solar Cell, Physics of Energy Harvesting Division, New Delhi 110012 (India); Toutam, Vijaykumar, E-mail: toutamvk@nplindia.org [Quantum Phenomena and Applications Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Singh, V.N., E-mail: singhvn@nplindia.org [Compound Semiconductor Solar Cell, Physics of Energy Harvesting Division, New Delhi 110012 (India)

    2015-10-15

    Graphical abstract: Experimental setup for conducting AFM (C-AFM). - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film was grown by reactive co-sputtering. • The electronic properties were probed using conducting atomic force microscope, scanning Kelvin probe microscopy and scanning capacitance microscopy. • C-AFM current flow mainly through grain boundaries rather than grain interiors. • SKPM indicated higher potential along the GBs compared to grain interiors. • The SCM explains that charge separation takes place at the interface of grain and grain boundary. - Abstract: Electrical characterization of grain boundaries (GB) of Cu-deficient CZTS (Copper Zinc Tin Sulfide) thin films was done using atomic force microscopic (AFM) techniques like Conductive atomic force microscopy (CAFM), Kelvin probe force microscopy (KPFM) and scanning capacitance microscopy (SCM). Absorbance spectroscopy was done for optical band gap calculations and Raman, XRD and EDS for structural and compositional characterization. Hall measurements were done for estimation of carrier mobility. CAFM and KPFM measurements showed that the currents flow mainly through grain boundaries (GB) rather than grain interiors. SCM results showed that charge separation mainly occurs at the interface of grain and grain boundaries and not all along the grain boundaries.

  13. On the modification of metal/ceramic interfaces by low energy ion/atom bombardment during film growth

    International Nuclear Information System (INIS)

    Rigsbee, J.M.; Scott, P.A.; Knipe, R.K.; Hock, V.F.

    1986-01-01

    Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive X-ray and TEM/STEM imaging and microdiffraction techniques. (Auth.)

  14. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    International Nuclear Information System (INIS)

    Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

    2014-01-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

  15. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ledinsky, Martin; Fejfar, Antonin; Vetushka, Aliaksei; Stuchlik, Jiri; Rezek, Bohuslav; Kocka, Jan [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i. Cukrovarnicka 10, 162 00 Praha 6 (Czech Republic)

    2011-11-15

    Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon ({mu}c-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100 x enhanced the current flows through the photosensitive {mu}c-Si:H layer. The local current map and current-voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent. C-AFM cantilever illuminated by the detection diode during measurement on {mu}c-Si:H thin film. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Formation and disruption of current paths of anodic porous alumina films by conducting atomic force microscopy

    International Nuclear Information System (INIS)

    Oyoshi, K.; Nigo, S.; Inoue, J.; Sakai, O.; Kitazawa, H.; Kido, G.

    2010-01-01

    Anodic porous alumina (APA) films have a honeycomb cell structure of pores and a voltage-induced bi-stable switching effect. We have applied conducting atomic force microscopy (CAFM) as a method to form and to disrupt current paths in the APA films. A bi-polar switching operation was confirmed. We have firstly observed terminals of current paths as spots or areas typically on the center of the triangle formed by three pores. In addition, though a part of the current path showed repetitive switching, most of them were not observed again at the same position after one cycle of switching operations in the present experiments. This suggests that a part of alumina structure and/or composition along the current paths is modified during the switching operations.

  17. Formation and disruption of current paths of anodic porous alumina films by conducting atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oyoshi, K., E-mail: oyoshi.keiji@nims.go.jp [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Nigo, S.; Inoue, J.; Sakai, O.; Kitazawa, H.; Kido, G. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2010-11-15

    Anodic porous alumina (APA) films have a honeycomb cell structure of pores and a voltage-induced bi-stable switching effect. We have applied conducting atomic force microscopy (CAFM) as a method to form and to disrupt current paths in the APA films. A bi-polar switching operation was confirmed. We have firstly observed terminals of current paths as spots or areas typically on the center of the triangle formed by three pores. In addition, though a part of the current path showed repetitive switching, most of them were not observed again at the same position after one cycle of switching operations in the present experiments. This suggests that a part of alumina structure and/or composition along the current paths is modified during the switching operations.

  18. The temperature dependence of atomic incorporation characteristics in growing GaInNAs films

    International Nuclear Information System (INIS)

    Li, Jingling; Gao, Fangliang; Wen, Lei; Zhou, Shizhong; Zhang, Shuguang; Li, Guoqiang

    2015-01-01

    We have systematically studied the temperature dependence of incorporation characteristics of nitrogen (N) and indium (In) in growing GaInNAs films. With the implementation of Monte-Carlo simulation, the low N adsorption energy (−0.10 eV) is demonstrated. To understand the atomic incorporation mechanism, temperature dependence of interactions between Group-III and V elements are subsequently discussed. We find that the In incorporation behaviors rather than that of N are more sensitive to the T g , which can be experimentally verified by exploring the compositional modulation and structural changes of the GaInNAs films by means of high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscope, and secondary ion mass spectroscopy

  19. Measurement of transient atomic displacements in thin films with picosecond and femtometer resolution

    Directory of Open Access Journals (Sweden)

    M. Kozina

    2014-05-01

    Full Text Available We report measurements of the transient structural response of weakly photo-excited thin films of BiFeO3, Pb(Zr,TiO3, and Bi and time-scales for interfacial thermal transport. Utilizing picosecond x-ray diffraction at a 1.28 MHz repetition rate with time resolution extending down to 15 ps, transient changes in the diffraction angle are recorded. These changes are associated with photo-induced lattice strains within nanolayer thin films, resolved at the part-per-million level, corresponding to a shift in the scattering angle three orders of magnitude smaller than the rocking curve width and changes in the interlayer lattice spacing of fractions of a femtometer. The combination of high brightness, repetition rate, and stability of the synchrotron, in conjunction with high time resolution, represents a novel means to probe atomic-scale, near-equilibrium dynamics.

  20. Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (United States)

    2016-01-15

    Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

  1. Growth of Fe2O3 thin films by atomic layer deposition

    International Nuclear Information System (INIS)

    Lie, M.; Fjellvag, H.; Kjekshus, A.

    2005-01-01

    Thin films of α-Fe 2 O 3 (α-Al 2 O 3 -type crystal structure) and γ-Fe 2 O 3 (defect-spinel-type crystal structure) have been grown by the atomic layer deposition (ALD) technique with Fe(thd) 3 (iron derivative of Hthd = 2,2,6,6-tetramethylheptane-3,5-dione) and ozone as precursors. It has been shown that an ALD window exists between 160 and 210 deg. C. The films have been characterized by various techniques and are shown to comprise (001)-oriented columns of α-Fe 2 O 3 with no in-plane orientation when grown on soda-lime-glass and Si(100) substrates. Good quality films have been made with thicknesses ranging from 10 to 130 nm. Films grown on α-Al 2 O 3 (001) and MgO(100) substrates have the α-Fe 2 O 3 and γ-Fe 2 O 3 crystal structure, respectively, and consist of highly oriented columns with in-plane orientations matching those of the substrates

  2. Ab initio study of the elastic properties of single and polycrystal TiO2, ZrO2 and HfO2 in the cotunnite structure

    International Nuclear Information System (INIS)

    Caravaca, M A; Mino, J C; Perez, V J; Casali, R A; Ponce, C A

    2009-01-01

    In this work, we study theoretically the elastic properties of the orthorhombic (Pnma) high-pressure phase of IV-B group oxides: titania, zirconia and hafnia. By means of the self-consistent SIESTA code, pseudopotentials, density functional theory in the LDA and GGA approximations, the total energies, hydrostatic pressures and stress tensor components are calculated. From the stress-strain relationships, in the linear regime, the elastic constants C ij are determined. Derived elastic constants, such as bulk, Young's and shear modulus, Poisson coefficient and brittle/ductile behavior are estimated with the polycrystalline approach, using Voigt-Reuss-Hill theories. We have found that C 11 , C 22 and C 33 elastic constants of hafnia and zirconia show increased strength with respect to the experimental values of the normal phase, P 2 1 /c. A similar situation applies to titania if these constants are compared with its normal phase, rutile. However, shear elastic constants C 44 , C 55 and C 66 are similar to the values found in the normal phase. This fact increases the compound anisotropy as well as its ductile behavior. The dependence of unit-cell volumes under hydrostatic pressures is also analyzed. P-V data, fitted to third-order Birch-Murnaghan equations of state, provide the bulk modulus B 0 and its pressure derivatives B' 0 . In this case, LDA estimations show good agreement with respect to recent measured bulk moduli of ZrO 2 and HfO 2 . Thermo-acoustic properties, e.g. the propagation speed of transverse, longitudinal elastic waves together with associated Debye temperatures, are also estimated.

  3. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Czech Academy of Sciences Publication Activity Database

    Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Rezek, Bohuslav; Kočka, Jan

    2011-01-01

    Roč. 5, 10-11 (2011), s. 373-375 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.218, year: 2011

  4. The growth of sodium rough films on mica (0001) as determined by Helium Atom Scattering

    DEFF Research Database (Denmark)

    Gerlach, Rolf; Balzer, Frank; Rubahn, Horst-Günter

    2001-01-01

    , which is addressed to Na atoms that fill cleavage-induced holes in the mica surface. It provides a convenient means of calibrating the coverage of the surface. With increasing surface coverage Na clusters are formed on the mica surface. A broad angular distribution of the scattered Helium intensity......Elastic helium atom scattering (HAS) and linear optical extinction measurements are used to investigate the growth of sodium (Na) films on mica substrates in the surface temperature range between 90 and 300 K. At half a monolayer (ML) surface coverage we observe a maximum of scattered He intensity...... is observed with a coverage-independent angular width above eight monolayers coverage. From simultaneous optical extinction measurements we deduce that the clusters are oblate with a ratio of semiaxes perpendicular and parallel to the surface plane between 0.23 and 0.165....

  5. Nanomechanical properties of SiC films grown from C{sub 60} precursors using atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morse, K. [Colorado School of Mines, Golden, CO (United States); Balooch, M.; Hamza, A.V.; Belak, J. [Lawrence Livermore National Lab., CA (United States)

    1994-12-01

    The mechanical properties of SiC films grown via C{sub 60} precursors were determined using atomic force microscopy (AFM). Conventional silicon nitride and modified diamond cantilever AFM tips were employed to determine the film hardness, friction coefficient, and elastic modulus. The hardness is found to be between 26 and 40 GPa by nanoindentation of the film with the diamond tip. The friction coefficient for the silicon nitride tip on the SiC film is about one third that for silicon nitride sliding on a silicon substrate. By combining nanoindentation and AFM measurements an elastic modulus of {approximately}300 GPa is estimated for these SiC films. In order to better understand the atomic scale mechanisms that determine the hardness and friction of SiC, we simulated the molecular dynamics of a diamond indenting a crystalline SiC substrate.

  6. Habituation/Fatigue behavior of a synapse memristor based on IGZO-HfO2 thin film.

    Science.gov (United States)

    Jiang, Ran; Ma, Pengfei; Han, Zuyin; Du, Xianghao

    2017-08-24

    A synaptic memristor based on IGZO and oxygen-deficient HfO 2 films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of voltage pulses, which is analogous to the habituation behavior of biological memory. The occurrence of habituation is nearly simultaneous with the transition from short-term memory to long-term memory. The movement and redistribution of oxygen species with the assistance of polarization in HfO 2 layer are responsible for the above results. The observation of habituation behavior proves the potential prospect of memristor on the mimic of biological neuron.

  7. Atoms

    International Nuclear Information System (INIS)

    Fuchs, Alain; Villani, Cedric; Guthleben, Denis; Leduc, Michele; Brenner, Anastasios; Pouthas, Joel; Perrin, Jean

    2014-01-01

    Completed by recent contributions on various topics (atoms and the Brownian motion, the career of Jean Perrin, the evolution of atomic physics since Jean Perrin, relationship between scientific atomism and philosophical atomism), this book is a reprint of a book published at the beginning of the twentieth century in which the author addressed the relationship between atomic theory and chemistry (molecules, atoms, the Avogadro hypothesis, molecule structures, solutes, upper limits of molecular quantities), molecular agitation (molecule velocity, molecule rotation or vibration, molecular free range), the Brownian motion and emulsions (history and general features, statistical equilibrium of emulsions), the laws of the Brownian motion (Einstein's theory, experimental control), fluctuations (the theory of Smoluchowski), light and quanta (black body, extension of quantum theory), the electricity atom, the atom genesis and destruction (transmutations, atom counting)

  8. Gold atoms and clusters on MgO(100) films; an EPR and IRAS study

    Science.gov (United States)

    Yulikov, M.; Sterrer, M.; Risse, T.; Freund, H.-J.

    2009-06-01

    Single gold atoms deposited on single crystalline MgO(1 0 0) films grown on Mo(1 0 0) are characterized by electron paramagnetic resonance spectroscopy as well as IR spectroscopy using CO as probe molecules. In this article we describe the first angular dependent measurements to determine the principal hyperfine components of a secondary hyperfine interaction, namely, with 17O of the MgO. The values determined here are in perfect agreement with theoretical expectations and corroborate the previously reported binding mechanism of Au atoms on the oxygen anions of the MgO terrace. The temperature dependent EPR data reveal an onset of Au atom mobility at about 80 K while the formation of Au particles occurs only above 125 K. By an analysis of the EPR line width in combination with STM measurements it is possible to deduce an increase of the interatomic distance above 80 K. The Au/CO complexes show a somewhat smaller temperature stability as compared to the Au atoms. The observed thermal stability is in perfect agreement with theoretical predictions for CO desorption.

  9. Atomic-Oxygen-Durable and Electrically-Conductive CNT-POSS-Polyimide Flexible Films for Space Applications.

    Science.gov (United States)

    Atar, Nurit; Grossman, Eitan; Gouzman, Irina; Bolker, Asaf; Murray, Vanessa J; Marshall, Brooks C; Qian, Min; Minton, Timothy K; Hanein, Yael

    2015-06-10

    In low Earth orbit (LEO), hazards such as atomic oxygen (AO) or electrostatic discharge (ESD) degrade polymeric materials, specifically, the extensively used polyimide (PI) Kapton. We prepared PI-based nanocomposite films that show both AO durability and ESD protection by incorporating polyhedral oligomeric silsesquioxane (POSS) and carbon nanotube (CNT) additives. The unique methods that are reported prevent CNT agglomeration and degradation of the CNT properties that are common in dispersion-based processes. The influence of the POSS content on the electrical, mechanical, and thermo-optical properties of the CNT-POSS-PI films was investigated and compared to those of control PI and CNT-PI films. CNT-POSS-PI films with 5 and 15 wt % POSS content exhibited sheet resistivities as low as 200 Ω/□, and these resistivities remained essentially unchanged after exposure to AO with a fluence of ∼2.3 × 10(20) O atoms cm(-2). CNT-POSS-PI films with 15 wt % POSS content exhibited an erosion yield of 4.8 × 10(-25) cm(3) O atom(-1) under 2.3 × 10(20) O atoms cm(-2) AO fluence, roughly one order of magnitude lower than that of pure PI films. The durability of the conductivity of the composite films was demonstrated by rolling film samples with a tight radius up to 300 times. The stability of the films to thermal cycling and ionizing radiation was also demonstrated. These properties make the prepared CNT-POSS-PI films with 15 wt % POSS content excellent candidates for applications where AO durability and electrical conductivity are required for flexible and thermally stable materials. Hence, they are suggested here for LEO applications such as the outer layers of spacecraft thermal blankets.

  10. Crystallization and atomic diffusion behavior of high coercive Ta/Nd-Fe-B/Ta-based permanent magnetic thin film

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Na; Zhang, Xiao; You, Caiyin; Fu, Huarui [Xi' an University of Technology, School of Materials Science and Engineering, Xi' an (China); Shen, Qianlong [Logistics University of People' s Armed Police Force, Tianjin (China)

    2017-06-15

    A high coercivity of about 20.4 kOe was obtained through post-annealing the sputtered Ta/Nd-Fe-B/Ta-based permanent magnetic thin films. Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analyses were performed to investigate the crystallization and atomic diffusion behaviors during post-annealing. The results show that the buffer and capping Ta layers prefered to intermix with Fe and B atoms, and Nd tends to be combined with O atoms. The preferred atomic combination caused the appearance of the soft magnetic phase of Fe-Ta-B, resulting in a kink of the second quadratic magnetic hysteresis loop. The preferred atomic diffusion and phase formation of the thin films were well explained in terms of the formation enthalpy of the various compounds. (orig.)

  11. Stripping scattering of fast atoms on surfaces of metal-oxide crystals and ultrathin films; Streifende Streuung schneller Atome an Oberflaechen von Metalloxid-Kristallen und ultraduennen Filmen

    Energy Technology Data Exchange (ETDEWEB)

    Blauth, David

    2010-03-11

    In the framework of the present dissertation the interactions of fast atoms with surfaces of bulk oxides, metals and thin films on metals were studied. The experiments were performed in the regime of grazing incidence of atoms with energies of some keV. The advantage of this scattering geometry is the high surface sensibility and thus the possibility to determine the crystallographic and electronic characteristics of the topmost surface layer. In addition to these experiments, the energy loss and the electron emission induced by scattered projectiles was investigated. The energy for electron emission and exciton excitation on Alumina/NiAl(110) and SiO{sub 2}/Mo(112) are determined. By detection of the number of projectile induced emitted electrons as function of azimuthal angle for the rotation of the target surface, the geometrical structure of atoms forming the topmost layer of different adsorbate films on metal surfaces where determined via ion beam triangulation. (orig.)

  12. Thin film growth into the ion track structures in polyimide by atomic layer deposition

    Science.gov (United States)

    Mättö, L.; Malm, J.; Arstila, K.; Sajavaara, T.

    2017-09-01

    High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was determined to be 51 ± 3 × 1016 at./cm2, corresponding to the thickness of 55 ± 3 nm. Furthermore, the growth per cycle was 1.4 Å/cycle. The growth is highly linear from the first cycles. In the case of TiO2, the growth per cycle is clearly slower during the first 200 cycles but then it increases significantly. The growth rate based on RBS measurements is 0.24 Å/cycle from 3 to 200 cycles and then 0.6 Å/cycle between 200 and 400 cycles. The final areal density of TiO2 film after 400 cycles is 148 ± 3 × 1015 at./cm2 which corresponds to the thickness of 17.4 ± 0.4 nm. The modification of the polyimide surface by etching prior to the deposition did not have an effect on the Al2O3 and TiO2 growth.

  13. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  14. The effect of deposition energy of energetic atoms on the growth and structure of ultrathin amorphous carbon films studied by molecular dynamics simulations

    KAUST Repository

    Wang, N; Komvopoulos, K

    2014-01-01

    The growth and structure of ultrathin amorphous carbon films was investigated by molecular dynamics simulations. The second-generation reactive-empirical-bond-order potential was used to model atomic interactions. Films with different structures

  15. Simulation and growing study of Cu–Al–S thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Duclaux, L., E-mail: loraine-externe.duclaux@edf.fr [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France); Donsanti, F.; Vidal, J. [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France); Bouttemy, M. [Lavoisier Institute of Versailles, UMR 8180, 45 avenue des Etats-Unis, 78035 Versailles cedex (France); Schneider, N.; Naghavi, N. [Institute of Research and Development on Photovoltaic Energy (IRDEP), EDF R& D/CNRS/ChimieParistech, UMR 7174, 6 quai Watier, 78401 Chatou (France)

    2015-11-02

    In this paper, we have explored the potential of Cu–Al–S compounds as p-type transparent conducting material by means of atomistic simulation using CuAlS{sub 2} as a reference ternary compound and atomic layer deposition (ALD) growth. We have identified key intrinsic point defects acting either as shallow acceptor or deep donor which define the conductivity of CuAlS{sub 2}. Higher p-type conductivity was found to be achievable under metal-poor and chalcogen-rich growth conditions. According to this precept, ALD growth of Cu{sub x}Al{sub y}S{sub z} was attempted using Cu(acac){sub 2} and Al(CH{sub 3}){sub 3} as precursors for Cu and Al respectively and under H{sub 2}S atmosphere. While as grown thin films present low content of Al, it influences the band gap values as well as the obtained structures. - Highlights: • Ab-initio investigation of CuAlS{sub 2} • Indentification of two opposite main-contributive intrinsic defects on the conductivity: V{sub Cu} and Al{sub Cu} • Synthesis of Cu-Al-S ternary compound using atomic layer deposition • Impact of aluminum insertion on the optical and structural properties of the films.

  16. Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

    Science.gov (United States)

    Zhang, Shumao; Kuo, Yue

    2018-03-01

    Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

  17. Laser-induced atomic assembling of periodic layered nanostructures of silver nanoparticles in fluoro-polymer film matrix

    International Nuclear Information System (INIS)

    Bagratashvili, V N; Minaev, N V; Timashev, P S; Yusupov, V I; Rybaltovsky, A O; Firsov, V V

    2010-01-01

    Fluorinated acrylic polymer (FAP) films have been impregnated with silver precursor (Ag(hfac)COD) by supercritical fluid technique and next irradiated with laser (λ = 532 nm). Laser-chemically reduced Ag atoms have been assembled into massifs of Ag nanoparticles (3 – 8 nm) in FAP/Ag(hfac)COD films matrix in the form of periodic layered nanostructures (horizontal to film surface) with unexpectedly short period (90 – 180 nm). The wavelet analysis of TEM images reveals the existence of even shorter-period structures in such films. Photolysis with non-coherent light or pyrolysis of FAP/Ag(hfac)COD film results in formation of Ag nanoparticles massifs but free of any periodic nanoparticle assemblies. Our interpretation of the observed effect of laser formation of short-period nano-sized Ag nanoparticle assemblies is based on self-enhanced interference process in the course of modification of optical properties of film

  18. Low-temperature atomic layer deposition of MgO thin films on Si

    International Nuclear Information System (INIS)

    Vangelista, S; Mantovan, R; Lamperti, A; Tallarida, G; Kutrzeba-Kotowska, B; Spiga, S; Fanciulli, M

    2013-01-01

    Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80–350 °C by using bis(cyclopentadienyl)magnesium and H 2 O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO 2 /Si substrates at a constant growth rate of ∼0.12 nm cycle −1 . The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C–V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6–11 nm thickness range, allow determining a dielectric constant (κ) ∼ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10 −5 –10 −6  Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C–V and I–V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition. (paper)

  19. Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wenhui; Luo, Jun; Meng, Lingkuan; Li, Junjie; Xiang, Jinjuan; Li, Junfeng; Wang, Wenwu; Chen, Dapeng; Ye, Tianchun; Zhao, Chao

    2016-08-31

    As an emerging developing technique for next-generation lithography, directed self-assembly (DSA) of block copolymer (BCP) has attracted numerous attention and has been a potential alternative to supplement the intrinsic limitations of conventional photolithography. In this work, the self-assembling properties of a lamellar diblock copolymer poly(styrene-b-methylmethacrylate) (PS-b-PMMA, 22k-b-22k, L{sub 0} = 25 nm) on Si substrate and an atomic layer deposition (ALD)-assisted pattern transfer technology for the application of DSA beyond 16/14 nm complementary metal oxide semiconductor (CMOS) technology nodes, were investigated. Firstly, two key processing parameters of DSA, i.e. annealing temperatures and durations of BCP films, were optimized to achieve low defect density and high productivity. After phase separation of BCP films, self-assembling patterns of low defect density should be transferred to the substrate. However, due to the nano-scale thickness and the weak resistance of BCP films to dry etching, it is nearly impossible to transfer the BCP patterns directly to the substrate. Therefore, an ALD-based technology was explored in this work, in which deposited Al{sub 2}O{sub 3} selectively reacts with PMMA blocks thus hardening the PMMA patterns. After removing PS blocks by plasma etching, hardened PMMA patterns were left and transferred to underneath SiO{sub 2} hard mask layer. Using this patterned hard mask, nanowire array of 25 nm pitch were realized on Si substrate. From this work, a high-throughput DSA baseline flow and related ALD-assisted pattern transfer technique were developed and proved to have good capability with the mainstream CMOS technology. - Highlights: • Optimization on self-assembly process for high productivity and low defectivity • Enhancement of etching ratio and resistance by atomic layer deposition (ALD) • A hard mask was used for pattern quality improvement and contamination control.

  20. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

    Science.gov (United States)

    Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

    2017-12-01

    The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

  1. Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gu Young; Noh, Seungtak; Lee, Yoon Ho; Cha, Suk Won, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical and Aerospace Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744 (Korea, Republic of); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Iui-dong, Yeongtong-gu, Suwon 443-270 (Korea, Republic of); Hong, Soon Wook; Koo, Bongjun; Kim, Young-Beom, E-mail: ybkim@hanyang.ac.kr, E-mail: swcha@snu.ac.kr [Department of Mechanical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of); An, Jihwan [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

    2016-01-15

    Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

  2. Capture of impurity atoms by defects and the distribution of the complexes under ion bormbardment of growing films

    International Nuclear Information System (INIS)

    Radzhabov, T.D.; Iskanderova, Z.A.; Arutyunova, E.O.; Samigulin, K.R.

    1982-01-01

    Theoretical study of capture of impurity gas atoms with defects during ion introduction of the impurity in the process of film growth with simultaneous diffusion has been carried out. Concentration profiles of forned impurity-defect complexes have been calculated analytically and numerically by means of a computer in film depth and in a substrate; basic peculiarities of impurity component formation captured with defects in a wide range of changing basic experimental parameters have been revealed. Effect of impurity capture with defects on amount and distribution of total concentration of impurity atoms and intensity of complete absorption of bombarding ions in films have been analyzed. Shown is a possibility for producing films with a high concentration level and almost uniform distribution of the impurity-defect complexes for real, achievable an experiment, values of process parameters as well as a possibility for increasing complete absorption of gaseous impurity wiht concentration growth of capture defects-traps

  3. Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

    International Nuclear Information System (INIS)

    Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelae, M.

    2005-01-01

    Deep level transient spectroscopy, capacitance-voltage and conductance transient measurement techniques have been applied in order to evaluate the electrical quality of thin high-permittivity oxide layers on silicon. The oxides studied included HfO 2 film grown from two different oxygen-free metal precursors and Ta 2 O 5 and Nb 2 O 5 nanolaminates. The interface trap densities correlated to the oxide growth chemistry and semiconductor substrate treatment. No gap state densities induced by structural disorder were measured in the films grown on chemical SiO 2 . Trap densities were also clearly lower in HfO 2 films compared to Ta 2 O 5 -Nb 2 O 5

  4. TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

    NARCIS (Netherlands)

    Van Hao, B.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.

    2012-01-01

    This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth

  5. Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

    Science.gov (United States)

    Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

    2004-12-01

    Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

  6. Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2016-01-01

    Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

  7. Effects of intermittent atomization on the properties of Al-doped ZnO thin films deposited by aerosol-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Linjie; Wang, Lixin [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Qin, Xiujuan, E-mail: qinxj@ysu.edu.cn [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Cui, Li [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Shao, Guangjie [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2016-04-30

    Al-doped ZnO (AZO) thin films were prepared on glass substrates with different atomization interval times by aerosol-assisted chemical vapor deposition method. The structure, morphology, and optical and electrical properties were investigated by X-ray diffractometer, atomic force microscope, UV-vis double beam spectrophotometer and 4 point probe method. ZnO thin films exhibited strong growth orientation along the (002) plane and the crystalline was affected by the atomization interval time. All the films had high transmittance and the films with interval times of 2 min and 4 min had good haze values for the transparent conducting oxide silicon solar cell applications. The AZO thin film had the best optical and electrical properties when the atomization interval time was 4 min. This is very important for the optoelectronic device applications. The surface morphology of AZO films depended on the atomization interval time. - Highlights: • Intermittent atomization is proved to be an effective measure. • Atomization interval time has an important influence on the crystallinity of films. • The surface morphology of ZnO films depends on atomization interval time. • Different hazes can be obtained by changing the atomization interval time.

  8. Effects of intermittent atomization on the properties of Al-doped ZnO thin films deposited by aerosol-assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu, Linjie; Wang, Lixin; Qin, Xiujuan; Cui, Li; Shao, Guangjie

    2016-01-01

    Al-doped ZnO (AZO) thin films were prepared on glass substrates with different atomization interval times by aerosol-assisted chemical vapor deposition method. The structure, morphology, and optical and electrical properties were investigated by X-ray diffractometer, atomic force microscope, UV-vis double beam spectrophotometer and 4 point probe method. ZnO thin films exhibited strong growth orientation along the (002) plane and the crystalline was affected by the atomization interval time. All the films had high transmittance and the films with interval times of 2 min and 4 min had good haze values for the transparent conducting oxide silicon solar cell applications. The AZO thin film had the best optical and electrical properties when the atomization interval time was 4 min. This is very important for the optoelectronic device applications. The surface morphology of AZO films depended on the atomization interval time. - Highlights: • Intermittent atomization is proved to be an effective measure. • Atomization interval time has an important influence on the crystallinity of films. • The surface morphology of ZnO films depends on atomization interval time. • Different hazes can be obtained by changing the atomization interval time.

  9. Characterization of gold nanoparticle films: Rutherford backscattering spectroscopy, scanning electron microscopy with image analysis, and atomic force microscopy

    Directory of Open Access Journals (Sweden)

    Pia C. Lansåker

    2014-10-01

    Full Text Available Gold nanoparticle films are of interest in several branches of science and technology, and accurate sample characterization is needed but technically demanding. We prepared such films by DC magnetron sputtering and recorded their mass thickness by Rutherford backscattering spectroscopy. The geometric thickness dg—from the substrate to the tops of the nanoparticles—was obtained by scanning electron microscopy (SEM combined with image analysis as well as by atomic force microscopy (AFM. The various techniques yielded an internally consistent characterization of the films. In particular, very similar results for dg were obtained by SEM with image analysis and by AFM.

  10. Atom

    International Nuclear Information System (INIS)

    Auffray, J.P.

    1997-01-01

    The atom through centuries, has been imagined, described, explored, then accelerated, combined...But what happens truly inside the atom? And what are mechanisms who allow its stability? Physicist and historian of sciences, Jean-Paul Auffray explains that these questions are to the heart of the modern physics and it brings them a new lighting. (N.C.)

  11. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  12. Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

    International Nuclear Information System (INIS)

    Luka, G.; Witkowski, B.S.; Wachnicki, L.; Jakiela, R.; Virt, I.S.; Andrzejczuk, M.; Lewandowska, M.; Godlewski, M.

    2014-01-01

    Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10 −3 Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10 −3 Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes

  13. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wei Yaowei; Liu Hao; Sheng Ouyang; Liu Zhichao; Chen Songlin; Yang Liming

    2011-01-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO 2 /Al 2 O 3 films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm Φ samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO 2 /Al 2 O 3 films, the LIDTs were 6.73±0.47 J/cm 2 and 6.5±0.46 J/cm 2 at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.

  14. Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

    2013-01-01

    We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

  15. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

    Directory of Open Access Journals (Sweden)

    Jörg Haeberle

    2013-11-01

    Full Text Available We report on results on the preparation of thin (2O3 films on silicon substrates using thermal atomic layer deposition (T-ALD and plasma enhanced atomic layer deposition (PE-ALD in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  16. Perovskite Solar Cells: From the Atomic Level to Film Quality and Device Performance.

    Science.gov (United States)

    Saliba, Michael; Correa-Baena, Juan-Pablo; Grätzel, Michael; Hagfeldt, Anders; Abate, Antonio

    2018-03-01

    Organic-inorganic perovskites have made tremendous progress in recent years due to exceptional material properties such as high panchromatic absorption, charge carrier diffusion lengths, and a sharp optical band edge. The combination of high-quality semiconductor performance with low-cost deposition techniques seems to be a match made in heaven, creating great excitement far beyond academic ivory towers. This is particularly true for perovskite solar cells (PSCs) that have shown unprecedented gains in efficiency and stability over a time span of just five years. Now there are serious efforts for commercialization with the hope that PSCs can make a major impact in generating inexpensive, sustainable solar electricity. In this Review, we will focus on perovskite material properties as well as on devices from the atomic to the thin film level to highlight the remaining challenges and to anticipate the future developments of PSCs. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Thin films of In2O3 by atomic layer deposition using In(acac)3

    International Nuclear Information System (INIS)

    Nilsen, O.; Balasundaraprabhu, R.; Monakhov, E.V.; Muthukumarasamy, N.; Fjellvag, H.; Svensson, B.G.

    2009-01-01

    Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In(acac) 3 (acac = acetylacetonate, pentane-2,4-dione) and either H 2 O or O 3 as precursors. Successful growth using In(acac) 3 is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165-200 o C for In(acac) 3 and H 2 O, 165-225 o C for In(acac) 3 and O 3 . The growth rates obtained are of the order 20 pm/cycle for In(acac) 3 and H 2 O, 12 pm/cycle for In(acac) 3 .

  18. Building a Better Capacitor with Thin-Film Atomic Layer Deposition Processing

    Energy Technology Data Exchange (ETDEWEB)

    Pike, Christopher [North Seattle College, WA (United States)

    2015-08-28

    The goal of this research is to determine procedures for creating ultra-high capacity supercapacitors by using nanofabrication techniques and high k-value dielectrics. One way to potentially solve the problem of climate change is to switch the source of energy to a source that doesn’t release many tons of greenhouse gases, gases which cause global warming, into the Earth’s atmosphere. These trap in more heat from the Sun’s solar energy and cause global temperatures to rise. Atomic layer deposition will be used to create a uniform thin-film of dielectric to greatly enhance the abilities of our capacitors and will build them on the nanoscale.

  19. Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

    International Nuclear Information System (INIS)

    Fan Ji-Bin; Liu Hong-Xia; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2013-01-01

    A comparative study of two kinds of oxidants (H 2 O and O 3 ) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlO x ) films is carried out. The effects of different oxidants on the physical properties and electrical characteristics of HfAlO x films are studied. The preliminary testing results indicate that the impurity level of HfAlO x films grown with both H 2 O and O 3 used as oxidants can be well controlled, which has significant effects on the dielectric constant, valence band, electrical properties, and stability of HfAlO x film. Additional thermal annealing effects on the properties of HfAlO x films grown with different oxidants are also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  20. Atomic force microscopy indentation of fluorocarbon thin films fabricated by plasma enhanced chemical deposition at low radio frequency power

    International Nuclear Information System (INIS)

    Sirghi, L.; Ruiz, A.; Colpo, P.; Rossi, F.

    2009-01-01

    Atomic force microscopy (AFM) indentation technique is used for characterization of mechanical properties of fluorocarbon (CF x ) thin films obtained from C 4 F 8 gas by plasma enhanced chemical vapour deposition at low r.f. power (5-30 W) and d.c. bias potential (10-80 V). This particular deposition method renders films with good hydrophobic property and high plastic compliance. Commercially available AFM probes with stiff cantilevers (10-20 N/m) and silicon sharpened tips (tip radius < 10 nm) are used for indentations and imaging of the resulted indentation imprints. Force depth curves and imprint characteristics are used for determination of film hardness, elasticity modulus and plasticity index. The measurements show that the decrease of the discharge power results in deposition of films with decreased hardness and stiffness and increased plasticity index. Nanolithography based on AFM indentation is demonstrated on thin films (thickness of 40 nm) with good plastic compliance.

  1. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    Directory of Open Access Journals (Sweden)

    Robert L. Z. Hoye

    2015-04-01

    Full Text Available Atmospheric pressure spatial atomic layer deposition (AP-SALD has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  2. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    Energy Technology Data Exchange (ETDEWEB)

    Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Muñoz-Rojas, David [LMGP, University Grenoble-Alpes, CNRS, F-3800 Grenoble (France); Nelson, Shelby F. [Kodak Research Laboratories, Eastman Kodak Company, Rochester, New York 14650 (United States); Illiberi, Andrea; Poodt, Paul [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Roozeboom, Fred [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB (Netherlands)

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  3. Formation and characterization of thin films from phthalocyanine complexes: An electrosynthesis study using the atomic-force microscope

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez Vergara, M.E. [Departamento de Ingenieria Mecatronica, Escuela de Ingenieria, Universidad Anahuac del Norte, Avenida Lomas de la Anahuac s/n, Col. Lomas Anahuac, 52786, Huixquilucan (Mexico)]. E-mail: elena.sanchez@anahuac.mx; Islas Bernal, I.F. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Circuito Exterior, Ciudad Universitaria, 04510, Mexico D.F. (Mexico); Rivera, M. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Circuito Exterior, Ciudad Universitaria, 04510, Mexico D.F. (Mexico); Ortiz Rebollo, A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, A.P. 70-360, Coyoacan, 04510, Mexico, D.F. (Mexico); Alvarez Bada, J.R. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Ciudad de Mexico, Calle del Puente 222, Col. Ejidos de Huipulco, 14380, Mexico D.F. (Mexico)

    2007-05-07

    ({mu}-Cyano)(phthalocyaninato)metal(III) [PcMCN]{sub n} species with a central transition metal ion, such as Fe(III) and Co(III), were used to prepare molecular films on a highly oriented pyrolytic graphite electrode substrate by using the cyclic voltammetry technique. In order to investigate the influence of the ligand on the film properties, 1,8-dihydroxyanthraquinone and 2,6-dihydroxyanthraquinone as bivalent ligands were employed. The structure of the molecular materials was analyzed by infrared spectroscopy. The in situ film formation, texture, composition and conductivity of each film were further investigated using atomic force microscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy and the four-probe technique, respectively. The [PcMCN]{sub n} complexes provided conductive films with an electrical conductivity of 1 x 10{sup -6} {omega}{sup -1} cm{sup -1} at 298 K.

  4. Formation and characterization of thin films from phthalocyanine complexes: An electrosynthesis study using the atomic-force microscope

    International Nuclear Information System (INIS)

    Sanchez Vergara, M.E.; Islas Bernal, I.F.; Rivera, M.; Ortiz Rebollo, A.; Alvarez Bada, J.R.

    2007-01-01

    (μ-Cyano)(phthalocyaninato)metal(III) [PcMCN] n species with a central transition metal ion, such as Fe(III) and Co(III), were used to prepare molecular films on a highly oriented pyrolytic graphite electrode substrate by using the cyclic voltammetry technique. In order to investigate the influence of the ligand on the film properties, 1,8-dihydroxyanthraquinone and 2,6-dihydroxyanthraquinone as bivalent ligands were employed. The structure of the molecular materials was analyzed by infrared spectroscopy. The in situ film formation, texture, composition and conductivity of each film were further investigated using atomic force microscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy and the four-probe technique, respectively. The [PcMCN] n complexes provided conductive films with an electrical conductivity of 1 x 10 -6 Ω -1 cm -1 at 298 K

  5. Atomic Layer Deposited Thin Films for Dielectrics, Semiconductor Passivation, and Solid Oxide Fuel Cells

    Science.gov (United States)

    Xu, Runshen

    , ultra-thin layer of encapsulating ZnS is coated on the surface of GaSb and GaSb/InAs substrates. The 2 nm-thick ZnS film is found to provide a long-term protection against reoxidation for one order and a half longer times than prior reported passivation likely due to its amorphous structure without pinholes. Finally, a combination of binary ALD processes is developed and demonstrated for the growth of yttria-stabilized zirconia films using alkylamido-cyclopentadiengyls zirconium and tris(isopropyl-cyclopentadienyl)yttrium, as zirconium and yttrium precursors, respectively, with ozone being the oxidant. The desired cubic structure of YSZ films is apparently achieved after post-deposition annealing. Further, platinum is atomic layer deposited as electrode on YSZ (8 mol% of Yttria) within the same system. In order to control the morphology of as-deposited Pt thin structure, the nucleation behavior of Pt on amorphous and cubic YSZ is investigated. Three different morphologies of Pt are observed, including nanoparticle, porous and dense films, which are found to depend on the ALD cycle number and the structure and morphology of they underlying ALD YSZ films.

  6. Growth of centimeter-scale atomically thin MoS2 films by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Gene Siegel

    2015-05-01

    Full Text Available We are reporting the growth of single layer and few-layer MoS2 films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns was used to ablate a polycrystalline MoS2 target. The material thus ablated was deposited on a single crystal sapphire (0001 substrate kept at 700 °C in an ambient vacuum of 10−6 Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM, Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL measurements. The ablation of the MoS2 target by 50 laser pulses (energy density: 1.5 J/cm2 was found to result in the formation of a monolayer of MoS2 as shown by AFM results. In the Raman spectrum, A1g and E12g peaks were observed at 404.6 cm−1 and 384.5 cm−1 with a spacing of 20.1 cm−1, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV and 615 nm (2.02 eV, with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS2 exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS2 films were prepared. It was found that as the number of monolayers (n in the MoS2 films increases, the spacing between the A1g and E12g Raman peaks (Δf increases following an empirical relation, Δ f = 26 . 45 − 15 . 42 1 + 1 . 44 n 0 . 9 cm − 1 .

  7. Single-pulse and multi-pulse femtosecond laser damage of optical single films

    International Nuclear Information System (INIS)

    Yuan Lei; Zhao Yuan'an; He Hongbo; Shao Jianda; Fan Zhengxiu

    2006-01-01

    Laser-induced damage of a single 500 nm HfO 2 film and a single 500 nm ZrO 2 film were studied with single- and multi-pulse femtosecond laser. The laser-induced damage thresholds (LIDT) of both samples by the 1-on-1 method and the 1000-on-1 method were reported. It was discovered that the LIDT of the HfO 2 single film was higher than that of the ZrO 2 single film by both test methods, which was explained by simple Keldysh's multiphoton ionization theory. The LIDT of multi-pulse was lower than that of single-pulse for both samples as a result of accumulative effect. (authors)

  8. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  9. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    Science.gov (United States)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  10. Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H., E-mail: ted.sargent@utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada); Kinge, Sachin [Advanced Technology, Materials and Research, Research and Development, Hoge Wei 33- Toyota Technical Centre, B-1930 Zaventem (Belgium)

    2015-10-12

    Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO{sub 2} layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10{sup −2} A W{sup −1} and a shot-derived specific detectivity of 3 × 10{sup 9} Jones at 1530 nm wavelength.

  11. Atomic layer deposition of absorbing thin films on nanostructured electrodes for short-wavelength infrared photosensing

    International Nuclear Information System (INIS)

    Xu, Jixian; Sutherland, Brandon R.; Hoogland, Sjoerd; Fan, Fengjia; Sargent, Edward H.; Kinge, Sachin

    2015-01-01

    Atomic layer deposition (ALD), prized for its high-quality thin-film formation in the absence of high temperature or high vacuum, has become an industry standard for the large-area deposition of a wide array of oxide materials. Recently, it has shown promise in the formation of nanocrystalline sulfide films. Here, we demonstrate the viability of ALD lead sulfide for photodetection. Leveraging the conformal capabilities of ALD, we enhance the absorption without compromising the extraction efficiency in the absorbing layer by utilizing a ZnO nanowire electrode. The nanowires are first coated with a thin shunt-preventing TiO 2 layer, followed by an infrared-active ALD PbS layer for photosensing. The ALD PbS photodetector exhibits a peak responsivity of 10 −2  A W −1 and a shot-derived specific detectivity of 3 × 10 9  Jones at 1530 nm wavelength

  12. The effect of substrate on thermodynamic and kinetic anisotropies in atomic thin films.

    Science.gov (United States)

    Haji-Akbari, Amir; Debenedetti, Pablo G

    2014-07-14

    Glasses have a wide range of technological applications. The recent discovery of ultrastable glasses that are obtained by depositing the vapor of a glass-forming liquid onto the surface of a cold substrate has sparked renewed interest in the effects of confinements on physicochemical properties of liquids and glasses. Here, we use molecular dynamics simulations to study the effect of substrate on thin films of a model glass-forming liquid, the Kob-Andersen binary Lennard-Jones system, and compute profiles of several thermodynamic and kinetic properties across the film. We observe that the substrate can induce large oscillations in profiles of thermodynamic properties such as density, composition, and stress, and we establish a correlation between the oscillations in total density and the oscillations in normal stress. We also demonstrate that the kinetic properties of an atomic film can be readily tuned by changing the strength of interactions between the substrate and the liquid. Most notably, we show that a weakly attractive substrate can induce the emergence of a highly mobile region in its vicinity. In this highly mobile region, structural relaxation is several times faster than in the bulk, and the exploration of the potential energy landscape is also more efficient. In the subsurface region near a strongly attractive substrate, however, the dynamics is decelerated and the sampling of the potential energy landscape becomes less efficient than the bulk. We explain these two distinct behaviors by establishing a correlation between the oscillations in kinetic properties and the oscillations in lateral stress. Our findings offer interesting opportunities for designing better substrates for the vapor deposition process or developing alternative procedures for situations where vapor deposition is not feasible.

  13. The effect of substrate on thermodynamic and kinetic anisotropies in atomic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Haji-Akbari, Amir; Debenedetti, Pablo G., E-mail: pdebene@exchange.princeton.edu [Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-07-14

    Glasses have a wide range of technological applications. The recent discovery of ultrastable glasses that are obtained by depositing the vapor of a glass-forming liquid onto the surface of a cold substrate has sparked renewed interest in the effects of confinements on physicochemical properties of liquids and glasses. Here, we use molecular dynamics simulations to study the effect of substrate on thin films of a model glass-forming liquid, the Kob-Andersen binary Lennard-Jones system, and compute profiles of several thermodynamic and kinetic properties across the film. We observe that the substrate can induce large oscillations in profiles of thermodynamic properties such as density, composition, and stress, and we establish a correlation between the oscillations in total density and the oscillations in normal stress. We also demonstrate that the kinetic properties of an atomic film can be readily tuned by changing the strength of interactions between the substrate and the liquid. Most notably, we show that a weakly attractive substrate can induce the emergence of a highly mobile region in its vicinity. In this highly mobile region, structural relaxation is several times faster than in the bulk, and the exploration of the potential energy landscape is also more efficient. In the subsurface region near a strongly attractive substrate, however, the dynamics is decelerated and the sampling of the potential energy landscape becomes less efficient than the bulk. We explain these two distinct behaviors by establishing a correlation between the oscillations in kinetic properties and the oscillations in lateral stress. Our findings offer interesting opportunities for designing better substrates for the vapor deposition process or developing alternative procedures for situations where vapor deposition is not feasible.

  14. The effect of substrate on thermodynamic and kinetic anisotropies in atomic thin films

    International Nuclear Information System (INIS)

    Haji-Akbari, Amir; Debenedetti, Pablo G.

    2014-01-01

    Glasses have a wide range of technological applications. The recent discovery of ultrastable glasses that are obtained by depositing the vapor of a glass-forming liquid onto the surface of a cold substrate has sparked renewed interest in the effects of confinements on physicochemical properties of liquids and glasses. Here, we use molecular dynamics simulations to study the effect of substrate on thin films of a model glass-forming liquid, the Kob-Andersen binary Lennard-Jones system, and compute profiles of several thermodynamic and kinetic properties across the film. We observe that the substrate can induce large oscillations in profiles of thermodynamic properties such as density, composition, and stress, and we establish a correlation between the oscillations in total density and the oscillations in normal stress. We also demonstrate that the kinetic properties of an atomic film can be readily tuned by changing the strength of interactions between the substrate and the liquid. Most notably, we show that a weakly attractive substrate can induce the emergence of a highly mobile region in its vicinity. In this highly mobile region, structural relaxation is several times faster than in the bulk, and the exploration of the potential energy landscape is also more efficient. In the subsurface region near a strongly attractive substrate, however, the dynamics is decelerated and the sampling of the potential energy landscape becomes less efficient than the bulk. We explain these two distinct behaviors by establishing a correlation between the oscillations in kinetic properties and the oscillations in lateral stress. Our findings offer interesting opportunities for designing better substrates for the vapor deposition process or developing alternative procedures for situations where vapor deposition is not feasible

  15. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Michael, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy, E-mail: mvschaefer@mail.usf.edu, E-mail: schlaf@mail.usf.edu [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2015-08-14

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru{sup 0}) and its oxide (RuO{sub 2}) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru{sup 0} and RuO{sub 2} films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO{sub 2} and 0.04 Å/cycle for Ru.{sup 0} An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO{sub 2}/OH compound whose surface is saturated with hydroxyl groups.

  16. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    Science.gov (United States)

    Schaefer, Michael; Schlaf, Rudy

    2015-08-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru0) and its oxide (RuO2) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru0 and RuO2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO2 and 0.04 Å/cycle for Ru.0 An interface dipole of up to -0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO2/OH compound whose surface is saturated with hydroxyl groups.

  17. Electronic structure investigation of atomic layer deposition ruthenium(oxide) thin films using photoemission spectroscopy

    International Nuclear Information System (INIS)

    Schaefer, Michael; Schlaf, Rudy

    2015-01-01

    Analyzing and manipulating the electronic band line-up of interfaces in novel micro- and nanoelectronic devices is important to achieve further advancement in this field. Such band alignment modifications can be achieved by introducing thin conformal interfacial dipole layers. Atomic layer deposition (ALD), enabling angstrom-precise control over thin film thickness, is an ideal technique for this challenge. Ruthenium (Ru 0 ) and its oxide (RuO 2 ) have gained interest in the past decade as interfacial dipole layers because of their favorable properties like metal-equivalent work functions, conductivity, etc. In this study, initial results of the electronic structure investigation of ALD Ru 0 and RuO 2 films via photoemission spectroscopy are presented. These experiments give insight into the band alignment, growth behavior, surface structure termination, and dipole formation. The experiments were performed in an integrated vacuum system attached to a home-built, stop-flow type ALD reactor without exposing the samples to the ambient in between deposition and analysis. Bis(ethylcyclopentadienyl)ruthenium(II) was used as precursor and oxygen as reactant. The analysis chamber was outfitted with X-ray photoemission spectroscopy (LIXPS, XPS). The determined growth modes are consistent with a strong growth inhibition situation with a maximum average growth rate of 0.21 Å/cycle for RuO 2 and 0.04 Å/cycle for Ru. 0 An interface dipole of up to −0.93 eV was observed, supporting the assumption of a strongly physisorbed interface. A separate experiment where the surface of a RuO film was sputtered suggests that the surface is terminated by an intermediate, stable, non-stoichiometric RuO 2 /OH compound whose surface is saturated with hydroxyl groups

  18. Atomic force imaging microscopy investigation of the interaction of ultraviolet radiation with collagen thin films

    Science.gov (United States)

    Stylianou, A.; Yova, D.; Alexandratou, E.; Petri, A.

    2013-02-01

    Collagen is the major fibrous protein in the extracellular matrix and consists a significant component of skin, bone, cartilage and tendon. Due to its unique properties, it has been widely used as scaffold or culture substrate for tissue regeneration or/and cell-substrate interaction studies. The ultraviolet light-collagen interaction investigations are crucial for the improvement of many applications such as that of the UV irradiation in the field of biomaterials, as sterilizing and photo-cross-linking method. The aim of this paper was to investigate the mechanisms of UV-collagen interactions by developing a collagen-based, well characterized, surface with controlled topography of collagen thin films in the nanoscale range. The methodology was to quantify the collagen surface modification induced on ultraviolet radiation and correlate it with changes induced in cells. Surface nanoscale characterization was performed by Atomic Force Microscopy (AFM) which is a powerful tool and offers quantitative and qualitative information with a non-destructive manner. In order to investigate cells behavior, the irradiated films were used for in vitro cultivation of human skin fibroblasts and the cells morphology, migration and alignment were assessed with fluorescence microscopy imaging and image processing methods. The clarification of the effects of UV light on collagen thin films and the way of cells behavior to the different modifications that UV induced to the collagen-based surfaces will contribute to the better understanding of cell-matrix interactions in the nanoscale and will assist the appropriate use of UV light for developing biomaterials.

  19. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Castán, H., E-mail: helena@ele.uva.es [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); García, H.; Dueñas, S.; Bailón, L. [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); Miranda, E. [Departament d' Enginyería Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra (Spain); Kukli, K. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland); Institute of Physics, University of Tartu, EE-50411,Tartu (Estonia); Kemell, M.; Ritala, M.; Leskelä, M. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland)

    2015-09-30

    Holmium titanium oxide (HoTiO{sub x}) thin films of variable chemical composition grown by atomic layer deposition are studied in order to assess their suitability as dielectric materials in metal–insulator–metal electronic devices. The correlation between thermal and electrical stabilities as well as the potential usefulness of HoTiO{sub x} as a resistive switching oxide are also explored. It is shown that the layer thickness and the relative holmium content play important roles in the switching behavior of the devices. Cycled current–voltage measurements showed that the resistive switching is bipolar with a resistance window of up to five orders of magnitude. In addition, it is demonstrated that the post-breakdown current–voltage characteristics in HoTiO{sub x} are well described by a power-law model in a wide voltage and current range which extends from the soft to the hard breakdown regimes. - Highlights: • Gate and memory suitabilities of atomic layer deposited holmium titanium oxide. • Holmium titanium oxide exhibits resistive switching. • Layer thickness and holmium content influence the resistive switching. • Low and high resistance regimes follow a power-law model. • The power-law model can be extended to the hard breakdown regime.

  20. Optimization studies of HgSe thin film deposition by electrochemical atomic layer epitaxy (EC-ALE)

    CSIR Research Space (South Africa)

    Venkatasamy, V

    2006-06-01

    Full Text Available Studies of the optimization of HgSe thin film deposition using electrochemical atomic layer epitaxy (EC-ALE) are reported. Cyclic voltammetry was used to obtain approximate deposition potentials for each element. These potentials were then coupled...

  1. Atomic force microscopy measurements of topography and friction on dotriacontane films adsorbed on a SiO2 surface

    DEFF Research Database (Denmark)

    Trogisch, S.; Simpson, M.J.; Taub, H.

    2005-01-01

    We report comprehensive atomic force microscopy (AFM) measurements at room temperature of the nanoscale topography and lateral friction on the surface of thin solid films of an intermediate-length normal alkane, dotriacontane (n-C32H66), adsorbed onto a SiO2 surface. Our topographic and frictional...

  2. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  3. Electrical charging characteristics of the hetero layer film for reducing water-borne paint contamination in electrostatic rotary atomizers

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Y.; Imanishi, T.; Yoshida, O.; Mizuno, A. [ABB Japan, Tokyo (Japan)

    2010-07-01

    The electrostatic rotary atomizer is the most efficient of all liquid spray painting methods. Its use minimizes the waste of paint and reduces emissions of volatile organic compounds (VOCs). Water-borne painting processes which use water-soluble paint also reduce VOC emissions, but the atomizer body is easily contaminated by the paint mists. The Institute of Electrical and Electronics Engineers (IEEE) considered the causes of water-borne paint contamination and presented the experimental results of a contamination proof system in which the atomizer is surrounded by the repelling film that is charged and repels the incoming paint droplets. Among the key factors for repelling film were electrical properties, such as low capacitance and high insulation to keep high surface potential. Charging uniformity was found to be among the most important characteristic to avoid contamination. The pulse electro-acoustic (PEA) method was used to check these features using space charge measurements inside the repelling film. It was concluded that hetero layer films have more uniform charging characteristics than single layer films.

  4. Protein adsorption resistance of PVP-modified polyurethane film prepared by surface-initiated atom transfer radical polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Huihui; Qian, Bin; Zhang, Wei [Shanghai Key Laboratory of Functional Materials Chemistry and Research Center of Analysis and Test, East China University of Science and Technology, Shanghai 200237 (China); Lan, Minbo, E-mail: minbolan@ecust.edu.cn [Shanghai Key Laboratory of Functional Materials Chemistry and Research Center of Analysis and Test, East China University of Science and Technology, Shanghai 200237 (China); State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China)

    2016-02-15

    Highlights: • Antifouling PVP brushes were successfully grafted on PU films by SI-ATRP. • The effect of polymerization time on surface property and topography was studied. • Hydrophilicity and protein fouling resistance of PVP–PU films were greatly promoted. • Competitive adsorption of three proteins on PVP–PU films was evaluated. - Abstract: An anti-fouling surface of polyurethane (PU) film grafted with Poly(N-vinylpyrrolidone) (PVP) was prepared through surface-initiated atom transfer radical polymerization (SI-ATRP). And the polymerization time was investigated to obtain PU films with PVP brushes of different lengths. The surface properties and protein adsorption of modified PU films were evaluated. The results showed that the hydrophilicity of PU–PVP films were improved with the increase of polymerization time, which was not positive correlation with the surface roughness due to the brush structure. Additionally, the protein resistance performance was promoted when prolonging the polymerization time. The best antifouling PU–PVP (6.0 h) film reduced the adsoption level of bovine serum albumin (BSA), lysozyme (LYS), and brovin serum fibrinogen (BFG) by 93.4%, 68.3%, 85.6%, respectively, compared to the unmodified PU film. The competitive adsorption of three proteins indicated that LYS preferentially adsorbed on the modified PU film, while BFG had the lowest adsorption selectivity. And the amount of BFG on PU–PVP (6.0 h) film reduced greatly to 0.08 μg/cm{sup 2}, which was almost one-tenth of its adsorption from the single-protein system. Presented results suggested that both hydrophilicity and surface roughness might be the important factors in all cases of protein adsorption, and the competitive or selective adsorption might be related to the size of the proteins, especially on the non-charged films.

  5. Protein adsorption resistance of PVP-modified polyurethane film prepared by surface-initiated atom transfer radical polymerization

    International Nuclear Information System (INIS)

    Yuan, Huihui; Qian, Bin; Zhang, Wei; Lan, Minbo

    2016-01-01

    Highlights: • Antifouling PVP brushes were successfully grafted on PU films by SI-ATRP. • The effect of polymerization time on surface property and topography was studied. • Hydrophilicity and protein fouling resistance of PVP–PU films were greatly promoted. • Competitive adsorption of three proteins on PVP–PU films was evaluated. - Abstract: An anti-fouling surface of polyurethane (PU) film grafted with Poly(N-vinylpyrrolidone) (PVP) was prepared through surface-initiated atom transfer radical polymerization (SI-ATRP). And the polymerization time was investigated to obtain PU films with PVP brushes of different lengths. The surface properties and protein adsorption of modified PU films were evaluated. The results showed that the hydrophilicity of PU–PVP films were improved with the increase of polymerization time, which was not positive correlation with the surface roughness due to the brush structure. Additionally, the protein resistance performance was promoted when prolonging the polymerization time. The best antifouling PU–PVP (6.0 h) film reduced the adsoption level of bovine serum albumin (BSA), lysozyme (LYS), and brovin serum fibrinogen (BFG) by 93.4%, 68.3%, 85.6%, respectively, compared to the unmodified PU film. The competitive adsorption of three proteins indicated that LYS preferentially adsorbed on the modified PU film, while BFG had the lowest adsorption selectivity. And the amount of BFG on PU–PVP (6.0 h) film reduced greatly to 0.08 μg/cm"2, which was almost one-tenth of its adsorption from the single-protein system. Presented results suggested that both hydrophilicity and surface roughness might be the important factors in all cases of protein adsorption, and the competitive or selective adsorption might be related to the size of the proteins, especially on the non-charged films.

  6. Inhomogeneous distribution of manganese atoms in ferromagnetic ZnSnAs{sub 2}:Mn thin films on InP revealed by three-dimensional atom probe investigation

    Energy Technology Data Exchange (ETDEWEB)

    Uchitomi, Naotaka, E-mail: uchitomi@nagaokaut.ac.jp; Inoue, Hiroaki; Kato, Takahiro; Toyota, Hideyuki [Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka 940-2188 (Japan); Uchida, Hiroshi [Toshiba Nanoanalysis Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)

    2015-05-07

    Atomic-scale Mn distributions in ferromagnetic ZnSnAs{sub 2}:Mn thin films grown on InP substrates have been studied by applying three-dimensional atom probe (3DAP) microscopy. It is found that Mn atoms in cross-sectional 3DAP maps show the presence of inhomogeneities in Mn distribution, which is characteristic patterns of a spinoidal decomposition phase with slightly high and low concentration regions. The high Mn concentration regions are expected to be coherently clustered MnAs in the zinc-blende structure, resulting in the formation of Mn-As random connecting patterns. The origin of room-temperature ferromagnetism in ZnSnAs{sub 2}:Mn on InP can be well explained by the formation of atomic-scale magnetic clustering by spinoidal decomposition without breaking the continuity of the zinc-blende structure, which has been suggested by previous theoretical works. The lattice-matching between magnetic epi-layers and substrates should be one of the most important factors to avoid the formation of secondary hexagonal MnAs phase precipitates in preparing ferromagnetic semiconductor thin films.

  7. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

    2014-10-30

    Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  8. Atomic structure and work function of the metal-film systems: lithium-(011) face of tungsten or molybdenum

    International Nuclear Information System (INIS)

    Kanash, O.V.; Fedorus, A.G.

    1984-01-01

    The atomic structure and phase transitions in lithium films and also the variation of the work function under lithium adsorption on the (011) face of W or Mo are studied by the low electron diffraction and contact potential difference methods in a wide range of submonolayer coverage. In the low coverage range (theta 5/9), identical sets of anisotropic structures are formed on both substrates which are specific for localized adsorption. In the coverage range between 1/4 for W (011) or 1/6 for Mo (011) and 5/9 (for both substrates) the film grows by virtue of two consecutive first order phase transitions. In the remaining theta region the film compression proceeds continuously. A model of mixing of cells of various sizes is used to explain the continuity of the compression process. At low coverage the film atomic structure corresponds to a predominant effect of dipole-dipole interaction betWeen the adatoms, whereas at high coverage it corresponds to an indirect interaction. The temperature stability of the films at different theta is studied. The effect of the film structure on the work function and surface diffusion is discussed

  9. Surface and electron emission properties of hydrogen-free diamond-like carbon films investigated by atomic force microscopy

    International Nuclear Information System (INIS)

    Liu Dongping; Zhang, Sam; Ong, S.-E.; Benstetter, Guenther; Du Hejun

    2006-01-01

    In this study, we have deposited hydrogen-free diamond-like carbon (DLC) films by using DC magnetron sputtering of graphite target at various r.f. bias voltages. Surface and nanoscale emission properties of these DLC films have been investigated using a combination of atomic force microscopy (AFM)-based nanowear tests and conducting-AFM, by simultaneously measuring the topography and the conductivity of the samples. Nanowear tests show that these DLC films are covered with the thin (1.5-2.0 nm) graphite-like layers at surfaces. Compared to the film bulk structure, the graphite-like surface layers are more conductive. The graphite-like surface layers significantly influence the electron emission properties of these films. Low-energy carbon species can be responsible for the formation of graphite-like surface layers. Nanoscale electron emission measurements have revealed the inhomogeneous emission nature of these films. The low-field emission from these films can be attributed to the existence of sp 2 -configured nanoclusters inside the films

  10. Short- and medium-range order of atomic structure and electronic properties of arsenic salinide and sulphide amorphous films

    International Nuclear Information System (INIS)

    Sarsembinov, Sh.Sh.; Prikhodko, O.Yu.; Ryaguzov, A.P.; Maksimova, S.Ya.; Ushanov, V.Zh.

    2004-01-01

    Full text: The relationship between short- and medium-range order of atomic structure and electronic properties is the object of invariable attention of disordered matter physics. This problem is the most important for non-crystalline semiconductors, and specifically for chalcogenide glassy semiconductors (ChGS) films due to low co-ordination of atoms, which leads to lability of their structure. In this report we present results of atomic structure, electric, optical properties and carrier drift investigation in amorphous films of As 2 Se 3 and As 2 S 3 prepared by thermal evaporation in a vacuum (TE films) and by RF ion-plasma sputtering (RF films). These techniques strongly differing in the conditions of substance vaporization and condensation atoms on a substrate. The short- and medium-range order of the films atomic structure has been studied by X-ray diffraction analysis using the CuKα radiation (λ=1.5418 Angstrom) and by Raman spectroscopy. Raman spectra were measured at room temperature on Perkin-Elmer Spectrum GX Raman FT-IR Spectrometer (180 deg. backscattering). Vibrational modes were excited vertically polarized light of DPY Nd:YAG laser (1.064 μm). The radii of the first and second coordination spheres, number of the nearest neighbours of As and Se (S) atoms in the first coordination sphere, dimension of the medium-range order domain and 'quasi-period' in that region have been determined for the studied samples. The identification of the structural units in matrix of the film has been carried out, too. It is established that the films prepared by different methods have differences in the parameters of short- and medium range orders. It follows from the comparative analysis of Raman spectra that spectrum of RF films is significantly more complex than that of glass and TE films. The matrix of RF films contains, along with the structural units AsSe 3/2 (AsS 3/2 ) inherent in TE films and glass, other structural units with As and Se (S) excess. It may be

  11. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

    Science.gov (United States)

    Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

    2018-06-15

    Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

  12. Optical and morphological characterization by atomic force microscopy of luminescent 2-styrylpyridine derivative compounds with Poly(N-vinylcarbazole) films

    International Nuclear Information System (INIS)

    Perez-Gutierrez, E.; Percino, M.J.; Chapela, V.M.; Maldonado, J.L.

    2011-01-01

    The present work addresses the optical and morphological properties of organic films based on low molecular weight dyes styrylpyridine derivatives 2-styrylpyridine (A), 4-chlorophenyl-2-vinylpyridine (B) and 4-fluorophenyl-2-vinylpyridine (C), embedded in a polymeric matrix poly(N-vinylcarbazole) (PVK). The films were prepared by a spin-coating technique from solutions with dye:PVK ratios of 0.25:1, 0.5:1 and 1:1. Solvents were chloroform and toluene. The molar absorption coefficient (ε) spectra for a dye:PVK mixture in solution were a combination of the absorptions of both components separately, but for the deposited films, the shape of the spectrum showed that the poly(N-vinylcarbazole) absorption dominated. However, when the same films were dissolved again in CHCl 3 , their spectra showed an absorption shape similar to that of the solution mixture before the deposition. Solution viscosity measurements were carried out with an Ubbelohde glass capillary viscometer to corroborate the results that showed a better mixture of the dye with the host in chloroform. The morphology of the prepared films was analyzed by atomic force microscopy and exhibited a solvent effect, with a pinhole-free, smooth surface when toluene was used and a wavy surface with chloroform. The ratio dye:matrix was the principal parameter for obtaining optical quality films; for 0.25:1 and 0.5:1 ratios, the films were of good quality, but for 1:1, the dye was expelled from the PVK and a crystallization was present over the surface of the films. Film thickness was also measured and films deposited from toluene solutions gave an average thickness of 54 nm while films from chloroform solutions had an average thickness greater than 160 nm that increased depending on chromophore concentration.

  13. Optical and morphological characterization by atomic force microscopy of luminescent 2-styrylpyridine derivative compounds with Poly(N-vinylcarbazole) films

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Gutierrez, E., E-mail: cuper_enrique@msn.com [Centro de Quimica, Instituto de Ciencias, Universidad Autonoma de Puebla, Complejo de Ciencias, ICUAP, Edif. 103-F, 22 Sur y San Claudio, C.P. 72570 Puebla, Puebla (Mexico); Percino, M.J.; Chapela, V.M. [Centro de Quimica, Instituto de Ciencias, Universidad Autonoma de Puebla, Complejo de Ciencias, ICUAP, Edif. 103-F, 22 Sur y San Claudio, C.P. 72570 Puebla, Puebla (Mexico); Maldonado, J.L. [Centro de Investigaciones en Optica A.C. (CIO), Lomas del Bosque 115, Col. Lomas del Campestre, C.P. 37150, Leon Guanajuato (Mexico)

    2011-07-01

    The present work addresses the optical and morphological properties of organic films based on low molecular weight dyes styrylpyridine derivatives 2-styrylpyridine (A), 4-chlorophenyl-2-vinylpyridine (B) and 4-fluorophenyl-2-vinylpyridine (C), embedded in a polymeric matrix poly(N-vinylcarbazole) (PVK). The films were prepared by a spin-coating technique from solutions with dye:PVK ratios of 0.25:1, 0.5:1 and 1:1. Solvents were chloroform and toluene. The molar absorption coefficient ({epsilon}) spectra for a dye:PVK mixture in solution were a combination of the absorptions of both components separately, but for the deposited films, the shape of the spectrum showed that the poly(N-vinylcarbazole) absorption dominated. However, when the same films were dissolved again in CHCl{sub 3}, their spectra showed an absorption shape similar to that of the solution mixture before the deposition. Solution viscosity measurements were carried out with an Ubbelohde glass capillary viscometer to corroborate the results that showed a better mixture of the dye with the host in chloroform. The morphology of the prepared films was analyzed by atomic force microscopy and exhibited a solvent effect, with a pinhole-free, smooth surface when toluene was used and a wavy surface with chloroform. The ratio dye:matrix was the principal parameter for obtaining optical quality films; for 0.25:1 and 0.5:1 ratios, the films were of good quality, but for 1:1, the dye was expelled from the PVK and a crystallization was present over the surface of the films. Film thickness was also measured and films deposited from toluene solutions gave an average thickness of 54 nm while films from chloroform solutions had an average thickness greater than 160 nm that increased depending on chromophore concentration.

  14. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

    International Nuclear Information System (INIS)

    Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

    2013-01-01

    Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films

    Directory of Open Access Journals (Sweden)

    Kaupo Kukli

    2017-02-01

    Full Text Available Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 °C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resistive states were observed in Ta2O5 films mixed with relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2.

  16. Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

    Science.gov (United States)

    Avila, José; Razado, Ivy; Lorcy, Stéphane; Fleurier, Romain; Pichonat, Emmanuelle; Vignaud, Dominique; Wallart, Xavier; Asensio, María C.

    2013-01-01

    The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far the electronic structure down to single graphene grains. Here we report a high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition. Our results show the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated. Moreover, by mapping grain by grain the electronic dynamics of this unique Dirac system, we show that the single-grain gap-size is 80% smaller than the multi-grain gap recently reported by classical ARPES. PMID:23942471

  17. Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures

    Science.gov (United States)

    Ylilammi, Markku; Ylivaara, Oili M. E.; Puurunen, Riikka L.

    2018-05-01

    The conformality of thin films grown by atomic layer deposition (ALD) is studied using all-silicon test structures with long narrow lateral channels. A diffusion model, developed in this work, is used for studying the propagation of ALD growth in narrow channels. The diffusion model takes into account the gas transportation at low pressures, the dynamic Langmuir adsorption model for the film growth and the effect of channel narrowing due to film growth. The film growth is calculated by solving the diffusion equation with surface reactions. An efficient analytic approximate solution of the diffusion equation is developed for fitting the model to the measured thickness profile. The fitting gives the equilibrium constant of adsorption and the sticking coefficient. This model and Gordon's plug flow model are compared. The simulations predict the experimental measurement results quite well for Al2O3 and TiO2 ALD processes.

  18. Thin film optical coatings for the ultraviolet spectral region

    Science.gov (United States)

    Torchio, P.; Albrand, G.; Alvisi, M.; Amra, C.; Rauf, H.; Cousin, B.; Otrio, G.

    2017-11-01

    The applications and innovations related to the ultraviolet field are today in strong growth. To satisfy these developments which go from biomedical to the large equipment like the Storage Ring Free Electron Laser, it is crucial to control with an extreme precision the optical performances, in using the substrates and the thin film materials impossible to circumvent in this spectral range. In particular, the reduction of the losses by electromagnetic diffusion, Joule effect absorption, or the behavior under UV luminous flows of power, resistance to surrounding particulate flows... become top priority which concerns a broad European and international community. Our laboratory has the theoretical, experimental and technological tools to design and fabricate numerous multilayer coatings with desirable optical properties in the visible and infrared spectral ranges. We have extended our expertise to the ultraviolet. We present here some results on high reflectivity multidielectric mirrors towards 250 nm in wavelength, produced by Ion Plating Deposition. The latter technique allows us to obtain surface treatments with low absorption and high resistance. We give in this study the UV transparent materials and the manufacturing technology which have been the best suited to meet requirements. Single UV layers were deposited and characterized. HfO2/SiO2 mirrors with a reflectance higher than 99% at 300 nm were obtained. Optical and non-optical characterizations such as UV spectrophotometric measurements, X-Ray Diffraction spectra, Scanning Electron Microscope and Atomic Force Microscope images were performed

  19. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    Science.gov (United States)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  20. The Effect of Cu:Ag Atomic Ratio on the Properties of Sputtered Cu–Ag Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Janghsing Hsieh

    2016-11-01

    Full Text Available Cu–Ag thin films with various atomic ratios were prepared using a co-sputtering technique, followed by rapid thermal annealing at various temperatures. The films’ structural, mechanical, and electrical properties were then characterized using X-ray diffractometry (XRD, atomic force microscopy (AFM, FESEM, nano-indentation, and TEM as functions of compositions and annealing conditions. In the as-deposited condition, the structure of these films transformed from a one-phase to a dual-phase state, and the resistivity shows a twin-peak pattern, which can be explained in part by Nordheim’s Rule and the miscibility gap of Cu–Ag alloy. After being annealed, the films’ resistivity followed the mixture rule in general, mainly due to the formation of a dual-phase structure containing Ag-rich and Cu-rich phases. The surface morphology and structure also varied as compositions and annealing conditions changed. The recrystallization of these films varied depending on Ag–Cu compositions. The annealed films composed of 40 at % to 60 at % Cu had higher hardness and lower roughness than those with other compositions. Particularly, the Cu50Ag50 film had the highest hardness after being annealed. From the dissolution testing, it was found that the Cu-ion concentration was about 40 times higher than that of Ag. The galvanic effect and over-saturated state could be the cause of the accelerated Cu dissolution and the reduced dissolution of the Ag.

  1. Atomic layer deposition of titanium oxide films on As-synthesized magnetic Ni particles: Magnetic and safety properties

    Energy Technology Data Exchange (ETDEWEB)

    Uudeküll, Peep, E-mail: peep.uudekull@ut.ee [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia); Kozlova, Jekaterina; Mändar, Hugo [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia); Link, Joosep [Laboratory of Chemical Physics, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Sihtmäe, Mariliis [Laboratory of Environmental Toxicology, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Käosaar, Sandra [Laboratory of Environmental Toxicology, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Faculty of Chemical and Materials Technology, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Blinova, Irina; Kasemets, Kaja; Kahru, Anne [Laboratory of Environmental Toxicology, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Stern, Raivo [Laboratory of Chemical Physics, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Tätte, Tanel [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia); Kukli, Kaupo [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia); University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Tamm, Aile [Institute of Physics, University of Tartu, W. Ostwaldi Str.1, 50411 Tartu (Estonia)

    2017-05-01

    Spherical nickel particles with size in the range of 100–400 nm were synthesized by non-aqueous liquid phase benzyl alcohol method. Being developed for magnetically guided biomedical applications, the particles were coated by conformal and antimicrobial thin titanium oxide films by atomic layer deposition. The particles retained their size and crystal structure after the deposition of oxide films. The sensitivity of the coated particles to external magnetic fields was increased compared to that of the uncoated powder. Preliminary toxicological investigations on microbial cells and small aquatic crustaceans revealed non-toxic nature of the synthesized particles.

  2. Atomic layer deposition of titanium oxide films on As-synthesized magnetic Ni particles: Magnetic and safety properties

    International Nuclear Information System (INIS)

    Uudeküll, Peep; Kozlova, Jekaterina; Mändar, Hugo; Link, Joosep; Sihtmäe, Mariliis; Käosaar, Sandra; Blinova, Irina; Kasemets, Kaja; Kahru, Anne; Stern, Raivo; Tätte, Tanel; Kukli, Kaupo; Tamm, Aile

    2017-01-01

    Spherical nickel particles with size in the range of 100–400 nm were synthesized by non-aqueous liquid phase benzyl alcohol method. Being developed for magnetically guided biomedical applications, the particles were coated by conformal and antimicrobial thin titanium oxide films by atomic layer deposition. The particles retained their size and crystal structure after the deposition of oxide films. The sensitivity of the coated particles to external magnetic fields was increased compared to that of the uncoated powder. Preliminary toxicological investigations on microbial cells and small aquatic crustaceans revealed non-toxic nature of the synthesized particles.

  3. Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

    International Nuclear Information System (INIS)

    Makino, Hisao; Miyake, Aki; Yamada, Takahiro; Yamamoto, Naoki; Yamamoto, Tetsuya

    2009-01-01

    Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth

  4. A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3 film grown on Ni foil

    Science.gov (United States)

    Palneedi, Haribabu; Yeo, Hong Goo; Hwang, Geon-Tae; Annapureddy, Venkateswarlu; Kim, Jong-Woo; Choi, Jong-Jin; Trolier-McKinstry, Susan; Ryu, Jungho

    2017-09-01

    In this study, a flexible magnetoelectric (ME) heterostructure of PZT/Ni was fabricated by depositing a (001) oriented Pb(Zr0.52Ti0.48)O3 (PZT) film on a thin, flexible Ni foil buffered with LaNiO3/HfO2. Excellent ferroelectric properties and large ME voltage coefficient of 3.2 V/cmṡOe were realized from the PZT/Ni heterostructure. The PZT/Ni composite's high performance was attributed to strong texturing of the PZT film, coupled with the compressive stress in the piezoelectric film. Besides, reduced substrate clamping in the PZT film due to the film on the foil structure and strong interfacial bonding in the PZT/LaNiO3/HfO2/Ni heterostructure could also have contributed to the high ME performance of PZT/Ni.

  5. Indentation modulus and hardness of viscoelastic thin films by atomic force microscopy: A case study

    International Nuclear Information System (INIS)

    Passeri, D.; Bettucci, A.; Biagioni, A.; Rossi, M.; Alippi, A.; Tamburri, E.; Lucci, M.; Davoli, I.; Berezina, S.

    2009-01-01

    We propose a nanoindentation technique based on atomic force microscopy (AFM) that allows one to deduce both indentation modulus and hardness of viscoelastic materials from the force versus penetration depth dependence, obtained by recording the AFM cantilever deflection as a function of the sample vertical displacement when the tip is pressed against (loading phase) and then removed from (unloading phase) the surface of the sample. Reliable quantitative measurements of both indentation modulus and hardness of the investigated sample are obtained by calibrating the technique through a set of different polymeric samples, used as reference materials, whose mechanical properties have been previously determined by standard indentation tests. By analyzing the dependence of the cantilever deflection versus time, the proposed technique allows one to evaluate and correct the effect of viscoelastic properties of the investigated materials, by adapting a post-experiment data processing procedure well-established for standard depth sensing indentation tests. The technique is described in the case of the measurement of indentation modulus and hardness of a thin film of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate), deposited by chronoamperometry on an indium tin oxide (ITO) substrate.

  6. Indentation modulus and hardness of viscoelastic thin films by atomic force microscopy: A case study

    Energy Technology Data Exchange (ETDEWEB)

    Passeri, D., E-mail: daniele.passeri@uniroma1.it [Dipartimento di Energetica, Universita di Roma ' La Sapienza' , Via A. Scarpa 16, 00161 Roma (Italy); Bettucci, A.; Biagioni, A.; Rossi, M.; Alippi, A. [Dipartimento di Energetica, Universita di Roma ' La Sapienza' , Via A. Scarpa 16, 00161 Roma (Italy); Tamburri, E. [Dipartimento di Scienze e Tecnologie Chimiche, Universita di Roma ' Tor Vergata' , Via della Ricerca Scientifica, 00133 Roma (Italy); Lucci, M.; Davoli, I. [Dipartimento di Fisica, Universita di Roma ' Tor Vergata' , Via della Ricerca Scientifica, 00133 Roma (Italy); Berezina, S. [Department of Physics, University of Zilina, 01026, Univerzitna 1 Zilina (Slovakia)

    2009-11-15

    We propose a nanoindentation technique based on atomic force microscopy (AFM) that allows one to deduce both indentation modulus and hardness of viscoelastic materials from the force versus penetration depth dependence, obtained by recording the AFM cantilever deflection as a function of the sample vertical displacement when the tip is pressed against (loading phase) and then removed from (unloading phase) the surface of the sample. Reliable quantitative measurements of both indentation modulus and hardness of the investigated sample are obtained by calibrating the technique through a set of different polymeric samples, used as reference materials, whose mechanical properties have been previously determined by standard indentation tests. By analyzing the dependence of the cantilever deflection versus time, the proposed technique allows one to evaluate and correct the effect of viscoelastic properties of the investigated materials, by adapting a post-experiment data processing procedure well-established for standard depth sensing indentation tests. The technique is described in the case of the measurement of indentation modulus and hardness of a thin film of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate), deposited by chronoamperometry on an indium tin oxide (ITO) substrate.

  7. TEM and ellipsometry studies of nanolaminate oxide films prepared using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)]. E-mail: drm@ansto.gov.au; Attard, D.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Finnie, K.S. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Triani, G. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Barbe, C.J. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Depagne, C. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia); Bartlett, J.R. [Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2005-04-30

    Nanolaminate oxide layers consisting of TiO{sub 2} and Al{sub 2}O{sub 3} have been deposited on silicon using atomic layer deposition (ALD). Characterisation of these films has been achieved by use of a range of modern transmission electron microscopy (TEM)-based techniques, including plasmon loss imaging, energy filtered imaging and scanning TEM (STEM) X-ray line profiling. These have shown that the target thickness of the individual layers in the nanolaminate structures (20 nm) has been met with a high degree of accuracy, that the layers are extremely flat and parallel and that the interfaces between the layers are compositionally abrupt. Localised crystallisation within the stacks, and responses to electron beam irradiation point to the presence of a stress gradient within the layers. The performance of ellipsometry in characterising multilayer stacks has been benchmarked against the TEM measurements. Errors in determination of individual layer thicknesses were found to increase with growing stack size, as expected given the increasing number of interfaces incorporated in each model. The most sophisticated model gave maximum deviations of {+-}4 nm from the TEM determined values for the 5- and 10-layer stacks.

  8. Displaying of formation of atomic clusters in radioactive lutetium oxide films

    International Nuclear Information System (INIS)

    Kartashov, V.M.; Troitskata, A.G.

    2002-01-01

    We earlier reported the results of our investigations of electron spectra of radioactive lutetium oxide films on the magnetic β-spectrometer π√2 with momentum resolution 0.04-0.1 %. The researches were conducted many times during ≅15 years, and a lot of the data has resulted us in the conclusion about possible formation of toroidal structures in these films. It is impossible to consider a radioactive oxide layer, deposited on metallic foil support having the electric potential of its foil support on all its depth because of its high dielectric properties. There is the potential gradient (≅10 6 -10 7 V/c) on its depth because of constant outflow of electrons from its surface. Our experiments included in itself also giving a potential, accelerating for electrons, to the metallic foil support. In this case we received a capability to watch the segments of auto emission and low energy Auger electrons. The analysis of the threshold relations and behavior (in time) of the M 4 NN and M 5 NN Auger electron intensities have resulted us in the conclusion that the greatest contribution to structure formations of these oxide films is introduced by electrons of M 4 -, M 5 - and N-sub-shell of ytterbium atoms (being formed as the result of radioactive decay of the lutetium fraction with half-times from 140 to 1200 days). The auto emission electron spectrum testifies to composite scission of M4 and M5 stationary states of the atom. It is possible to offer as the explanation a quantum flat rotator. If the particle orbit un-compresses the solenoid with a magnetic flux Φ, power condition of a rotator E m =h 2 (m-Φ/Φ 0 ) 2 /(8πm e R 0 2 ), where m e - electron mass, R 0 - an electron orbit radius; m - a magnetic quantum number, a Φ 0 =h c/e - a quantum of magnetic flux. At a quantum flow Φ=nΦ 0 (n - integer) and the power spectrum does not differ from a spectrum without the solenoid. The behavior (in time) of the experimental auto emission electron spectrum responds

  9. Thermal evolution of CaO-doped HfO{sub 2} films and powders

    Energy Technology Data Exchange (ETDEWEB)

    Barolin, S A; Sanctis, O A de [Lab. Materiales Ceramicos, FCEIyA, Universidad Nacional de Rosario, IFIR-CONICET (Argentina); Caracoche, M C; Martinez, J A; Taylor, M A; Pasquevich, A F [Departamento de Fisica, FCE, Universidad Nacional de La Plata, IFLP-CONICET (Argentina); Rivas, P C, E-mail: oski@fceia.unr.edu.a [Facultad de Ciencias Agronomicas y Forestales, Universidad Nacional de La Plata, IFLP (Argentina)

    2009-05-01

    Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SOFC because both are oxygen-ion conductors. The main challenge for these compounds is to reduce the relatively high value of the activation energies vacancies diffusion, which is influenced by several factors. In this work the thermal evolution of CaO-HfO{sub 2} materials have been investigated. (CaO)y-Hf(1-y)O(2-y) (y = 0.06, 0.14 y 0.2) coatings and powders were synthesized by chemical solution deposition (CSD). Films were deposited onto alumina substrates by Dip Coating technique, the burning of organic waste was carried out at 500 deg. C under normal atmosphere and then the films were thermally treated at intervals of temperature rising to a maximum temperature of 1250 deg. C. By means Glazing Incidence X-ray Diffraction (rho-2theta configuration) the phases were studied in the annealed films. On the other hand, the thermal evolution and crystallization process of powders were analyzed in-situ by HT-XRD. The phenomena crystallization occurred in films and powders were analyzed. The activation energies of diffusion of oxygen vacancies of HfO2-14 mole% CaO and HfO2-20 mole% CaO films were measured from the thermal evolution of the relaxation constant measured by Perturbed Angular Correlation Technique.

  10. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when integrated with advanced EBC top coats, showed promise to achieve 1500 C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and long-term durability.

  11. Atomic layer deposition of VO{sub 2} films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Xinrui [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cao, Yunzhen, E-mail: yzhcao@mail.sic.ac.cn [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China); Yan, Lu; Li, Ying; Song, Lixin [Key Laboratory of Inorganic Coating Materials CAS, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800 (China)

    2017-02-28

    Highlights: • VO{sub 2} film was easily deposited by ALD using novel vanadium precursor V(NMe{sub 2}){sub 4}. • Deposition and annealing condition were systematically investigated. • Comparable transition properties of VO{sub 2} film on resistance and spectral transmittance were studied. - Abstract: VO{sub 2} thin films have been grown on Si(100) (VO{sub 2}/Si) and fused silica substrates (VO{sub 2}/SiO{sub 2}) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO{sub 2} thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150–200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO{sub 2} films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO{sub 2}/Si film. AFM was applied to study the surface morphology of VO{sub 2}/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO{sub 2}/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (T{sub c,h}) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of T{sub c,h} compared with the bulk VO{sub 2} (68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO{sub 2}/SiO{sub 2} films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across

  12. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  13. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Hui-Ying Li

    2015-02-01

    Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

  14. Morphology, composition and electrical properties of SnO{sub 2}:Cl thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Hsyi-En, E-mail: sean@mail.stust.edu.tw; Wen, Chia-Hui; Hsu, Ching-Ming [Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan (China)

    2016-01-15

    Chlorine doped SnO{sub 2} thin films were prepared using atomic layer deposition at temperatures between 300 and 450 °C using SnCl{sub 4} and H{sub 2}O as the reactants. Composition, structure, surface morphology, and electrical properties of the as-deposited films were examined. Results showed that the as-deposited SnO{sub 2} films all exhibited rutile structure with [O]/[Sn] ratios between 1.35 and 1.40. The electrical conductivity was found independent on [O]/[Sn] ratio but dependent on chlorine doping concentration, grain size, and surface morphology. The 300 °C-deposited film performed a higher electrical conductivity of 315 S/cm due to its higher chlorine doping level, larger grain size, and smoother film surface. The existence of Sn{sup 2+} oxidation state was demonstrated to minimize the effects of chlorine on raising the electrical conductivity of films.

  15. Reactivity at the film/solution interface of ex situ prepared bismuth film electrodes: A scanning electrochemical microscopy (SECM) and atomic force microscopy (AFM) investigation

    International Nuclear Information System (INIS)

    Hocevar, Samo B.; Daniele, Salvatore; Bragato, Carlo; Ogorevc, Bozidar

    2007-01-01

    Bismuth film electrodes (BiFEs) prepared ex situ with and without complexing bromide ions in the modification solution were investigated using scanning electrochemical microscopy (SECM) and atomic force microscopy (AFM). A feedback mode of the SECM was employed to examine the conductivity and reactivity of a series of thin bismuth films deposited onto disk glassy carbon substrate electrodes (GCEs) of 3 mm in diameter. A platinum micro-electrode (φ = 25 μm) was used as the SECM tip, and current against tip/substrate distance was recorded in solutions containing either Ru(NH 3 ) 6 3+ or Fe(CN) 6 4- species as redox mediators. With both redox mediators positive feedback approach curves were recorded, which indicated that the bismuth film deposition protocol associated with the addition of bromide ions in the modification solution did not compromise the conductivity of the bismuth film in comparison with that prepared without bromide. However, at the former Bi film a slight kinetic hindering was observed in recycling Ru(NH 3 ) 6 3+ , suggesting a different surface potential. On the other hand, the approach curves recorded by using Fe(CN) 6 4- showed that both types of the aforementioned bismuth films exhibited local reactivity with the oxidised form of the redox mediator, and that bismuth film obtained with bromide ions exhibited slightly lower reactivity. The use of SECM in the scanning operation mode allowed us to ascertain that the bismuth deposits were uniformly distributed across the whole surface of the glassy carbon substrate electrode. Comparative AFM measurements corroborated the above findings and additionally revealed a denser growth of smaller bismuth crystals over the surface of the substrate electrode in the presence of bromide ions, while the crystals were bigger but sparser in the absence of bromide ions in the modification solution

  16. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    International Nuclear Information System (INIS)

    Bolat, Sami; Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-01

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N 2 /H 2 PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH 3 PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N 2 :H 2 ambient

  17. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Provine, J., E-mail: jprovine@stanford.edu; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Kim, Ki-Hyun [Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of); Prinz, Fritz B. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-06-15

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

  18. UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2

    International Nuclear Information System (INIS)

    Mochizuki, Shosuke; Saito, Takashi; Yoshida, Kaori

    2012-01-01

    The photoluminescence (PL) enhancement has been studied at room temperature using various specimen atmospheres (O 2 gas, CO 2 gas, CO 2 -H 2 mixture gas, Ar-H 2 mixture gas and vacuum) under 325 nm laser light irradiation on various metal oxides. Of them, the results obtained for BaTiO 3 nanocrystals, SrTiO 3 ones and HfO 2 powder crystal are given in the present paper. Their PL were considerably increased in intensity by irradiation of 325 nm laser light in CO 2 gas and CO 2 -H 2 mixture gas. The cause of the PL intensity enhancements is discussed in the light of the exciton theory, the defect chemistry and the photocatalytic theory. The results may be applied for the utilization of greenhouse gas (CO 2 ) and the optical sensor for CO 2 gas.

  19. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics

    OpenAIRE

    Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C.; Kim, Hyoungsub

    2017-01-01

    We studied the impact of H2 pressure during post-metallization annealing on the chemical composition of a HfO2/Al2O3 gate stack on a HCl wet-cleaned In0.53Ga0.47As substrate by comparing the forming gas annealing (at atmospheric pressure with a H2 partial pressure of 0.04?bar) and H2 high-pressure annealing (H2-HPA at 30?bar) methods. In addition, the effectiveness of H2-HPA on the passivation of the interface states was compared for both p- and n-type In0.53Ga0.47As substrates. The decomposi...

  20. Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

    Science.gov (United States)

    Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

    2018-04-01

    Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

  1. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  2. Studying the Adhesion Force and Glass Transition of Thin Polystyrene Films by Atomic Force Microscopy

    DEFF Research Database (Denmark)

    Kang, Hua; Qian, Xiaoqin; Guan, Li

    2018-01-01

    microscopy (AFM)-based forcedistance curve to study the relaxation dynamics and the film thickness dependence of glass transition temperature (T-g) for normal thin polystyrene (PS) films supported on silicon substrate. The adhesion force (F-ad) between AFM tip and normal thin PS film surfaces...

  3. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  4. The effect of the partial pressure of H2 gas and atomic hydrogen on diamond films deposited using CH3OH/H2O gas

    International Nuclear Information System (INIS)

    Lee, Kwon-Jai; Koh, Jae-Gui; Shin, Jae-Soo; Kwon, Ki-Hong; Lee, Chang-Hee

    2006-01-01

    Diamond films were deposited on Si(100) substrates by hot filament chemical vapor deposition (HFCVD) with a CH 3 OH/H 2 O gas mixture while changing the gas ratio. The films were analyzed with scanning electron microscopy (SEM), Raman spectroscopy, and optical emission spectroscopy (OES). The diamond films were grown with CH 3 OH being 52 % by volume of the gas mixture. The effect of atomic hydrogen on the film was different from that of the CH 4 /H 2 gas mixture. Analysis with OES during film growth indicated that among the thermally dissociated hydrogen radicals, only H α contributed to the etching of graphite.

  5. Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

    International Nuclear Information System (INIS)

    Nepal, N.; Goswami, R.; Qadri, S.B.; Mahadik, N.A.; Kub, F.J.; Eddy, C.R.

    2014-01-01

    Recent results on atomic layer epitaxy (ALE) growth and characterization of (0 0 0 1)AlN on highly oriented (1 1 1)Pt layers on amorphous HfO 2 /Si(1 0 0) are reported. HfO 2 was deposited by atomic layer deposition on Si(1 0 0) followed by ALE growth of Pt(15 nm) and, subsequently, AlN(60 nm) at 500 °C. Based on the X-ray diffraction and transmission electron microscopy measurements, the Pt and AlN layers are highly oriented along the (1 1 1) and (0 0 0 2) directions, respectively. Demonstrations of AlN/Pt heterostructures open up the possibility of new state-of-the-art microelectromechanical systems devices

  6. Investigation of Al2O3 barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

    International Nuclear Information System (INIS)

    Maindron, Tony; Aventurier, Bernard; Ghazouani, Ahlem; Jullien, Tony; Rochat, Névine; Simon, Jean-Yves; Viasnoff, Emilie

    2013-01-01

    Al 2 O 3 films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ 3 ) films made onto silicon wafers. It has been found that a thick ALD-deposited Al 2 O 3 layer (> 11 nm) greatly prevents the photo-oxidation of AlQ 3 films when exposed to continuous UV irradiation (350 mW/cm 2 ). Thin Al 2 O 3 thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al 2 O 3 layer have been easily observed as non-fluorescent AlQ 3 singularities, or black spots, under UV light on the system Si/AlQ 3 /Al 2 O 3 stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h −1 ·cm −2 and 0.243 h −1 ·cm −2 respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO 2 onto the Si/AlQ 3 /Al 2 O 3 sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h −1 ·cm −2 and 0.04 h −1 ·cm −2 respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al 2 O 3 films and confirm the general idea that a single Al 2 O 3 ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an additional moisture-stable layer. - Highlights: • Thin Al 2 O 3 films have been deposited by atomic layer deposition onto organic films.

  7. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

  8. Photon up-converting (Yb,Er){sub 2}O{sub 3} thin films by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tuomisto, Minnea [Department of Chemistry, University of Turku (Finland); Doctoral Programme in Physical and Chemical Sciences, University of Turku Graduate School (UTUGS), Turku (Finland); Giedraityte, Zivile; Karppinen, Maarit [Department of Chemistry and Materials Science, School of Chemical Engineering, Aalto University (Finland); Lastusaari, Mika [Department of Chemistry, University of Turku (Finland); Turku University Centre for Materials and Surfaces (MatSurf), Turku (Finland)

    2017-06-15

    We report up-converting (Yb,Er){sub 2}O{sub 3} thin films grown with the atomic layer deposition (ALD) technique. The films are crystalline and show a homogeneous morphology with a roughness less than 1 nm for 40 nm thick films. High-intensity near-infrared (NIR) to green and red two-photon up-conversion emission is obtained with 974 nm excitation through an absorption by Yb{sup 3+}, followed by a Yb{sup 3+}-Er{sup 3+} energy transfer and emission from Er{sup 3+}. The ALD technique promises to be excellent for producing up-converting films for many applications such as near-infrared radiation absorbing layers for solar cells and sensors in point-of-care biomedical diagnostics. Schematic picture of the ALD-grown (Yb,Er){sub 2}O{sub 3} thin film including the up-conversion emission spectra. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Atomic layer deposition of cobalt carbide films and their magnetic properties using propanol as a reducing agent

    Energy Technology Data Exchange (ETDEWEB)

    Sarr, Mouhamadou, E-mail: sarrtapha44@yahoo.fr [Luxembourg Instituteof Science and Technology, 41, rue du Brill, L-4422 Belvaux (Luxembourg); Bahlawane, Naoufal; Arl, Didier [Luxembourg Instituteof Science and Technology, 41, rue du Brill, L-4422 Belvaux (Luxembourg); Dossot, Manuel [Laboratory of Physical Chemistry and Microbiology for the Environment, UMR 7564 CNRS-Université de Lorraine, 405 rue de Vandoeuvre, 54601 Villers-lès-Nancy (France); McRae, Edward [Institut Jean Lamour, UMR 7198CNRS-Université de Lorraine, FST, BP 70239, 54506 Vandoeuvre-lès-Nancy (France); Lenoble, Damien, E-mail: damien.lenoble@list.lu [Luxembourg Instituteof Science and Technology, 41, rue du Brill, L-4422 Belvaux (Luxembourg)

    2016-08-30

    Highlights: • Conformal carbon-Co-carbide thin films. • Chemically growth carbone-Co-carbide composite. • Tuneable magnetic properties. - Abstract: The investigation of highly conformal thin films using Atomic Layer Deposition (ALD) is driven by a variety of applications in modern technologies. In particular, the emergence of 3D memory device architectures requires conformal materials with tuneable magnetic properties. Here, nanocomposites of carbon, cobalt and cobalt carbide are deposited by ALD using cobalt acetylacetonate with propanol as a reducing agent. Films were grown by varying the ALD deposition parameters including deposition temperature and propanol exposure time. The morphology, the chemical composition and the crystalline structure of the cobalt carbide film were investigated. Vibrating Sample Magnetometer (VSM) measurements revealed magnetic hysteresis loops with a coercivity reaching 500 Oe and a maximal saturation magnetization of 0.9 T with a grain size less than 15 nm. Magnetic properties are shown to be tuneable by adjusting the deposition parameters that significantly affect the microstructure and the composition of the deposited films.

  10. Atomic-layer chemical-vapor-deposition of TiN thin films on Si(100) and Si(111)

    CERN Document Server

    Kim, Y S; Kim, Y D; Kim, W M

    2000-01-01

    An atomic-layer chemical vapor deposition (AL-CVD) system was used to deposit TiN thin films on Si(100) and Si(111) substrates by cyclic exposures of TiCl sub 4 and NH sub 3. The growth rate was measured by using the number of deposition cycles, and the physical properties were compared with those of TiN films grown by using conventional deposition methods. To investigate the growth mechanism, we suggest a growth model for TiN n order to calculate the growth rate per cycle with a Cerius program. The results of the calculation with the model were compared with the experimental values for the TiN film deposited using the AL-CVD method. The stoichiometry of the TiN film was examined by using Auger electron spectroscopy, and the chlorine and the oxygen impurities were examined. The x-ray diffraction and the transmission electron microscopy results for the TiN film exhibited a strong (200) peak and a randomly oriented columnar microstructure. The electrical resistivity was found to decrease with increasing deposit...

  11. Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

    International Nuclear Information System (INIS)

    Jeon, Ki-Moon; Shin, Jae-Su; Yun, Ju-Young; Jun Lee, Sang; Kang, Sang-Woo

    2014-01-01

    The plasma-enhanced atomic layer deposition (PEALD) process was developed as a growth technique of SiO 2 thin films using a plasma-activated triisopropylsilane [TIPS, ((iPr) 3 SiH)] precursor. TIPS was activated by an argon plasma at the precursor injection stage of the process. Using the activated TIPS, it was possible to control the growth rate per cycle of the deposited films by adjusting the plasma ignition time. The PEALD technique allowed deposition of SiO 2 films at temperatures as low as 50 °C without carbon impurities. In addition, films obtained with plasma ignition times of 3 s and 10 s had similar values of root-mean-square surface roughness. In order to evaluate the suitability of TIPS as a precursor for low-temperature deposition of SiO 2 films, the vapor pressure of TIPS was measured. The thermal stability and the reactivity of the gas-phase TIPS with respect to water vapor were also investigated by analyzing the intensity changes of the C–H and Si–H peaks in the Fourier-transform infrared spectrum of TIPS

  12. Atomic layer deposition of molybdenum disulfide films using MoF 6 and H 2 S

    Energy Technology Data Exchange (ETDEWEB)

    Mane, Anil U. [Energy Systems Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439; Letourneau, Steven [Micron School of Materials Science and Engineering, Boise State University, 1910 University Dr., Boise, Idaho 83725; Mandia, David J. [Energy Systems Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439; Liu, Jian [Department of Chemistry, Northwestern University, 2145 Sheridan Rd., Evanston, Illinois 60208; Libera, Joseph A. [Energy Systems Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439; Lei, Yu [Energy Systems Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439; Peng, Qing [Energy Systems Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439; Graugnard, Elton [Micron School of Materials Science and Engineering, Boise State University, 1910 University Dr., Boise Idaho 83725; Elam, Jeffrey W. [Energy Systems Division, Argonne National Laboratory, 9700 S. Cass Ave, Argonne, Illinois 60439

    2018-01-01

    Molybdenum sulfide films were grown by atomic layer deposition on silicon and fused silica substrates using molybdenum hexafluoride (MoF6) and hydrogen sulfide at 200 degrees C. In situ quartz crystal microbalance (QCM) measurements confirmed linear growth at 0.46 angstrom/cycle and self-limiting chemistry for both precursors. Analysis of the QCM step shapes indicated that MoS2 is the reaction product, and this finding is supported by x-ray photoelectron spectroscopy measurements showing that Mo is predominantly in the Mo(IV) state. However, Raman spectroscopy and x-ray diffraction measurements failed to identify crystalline MoS2 in the as-deposited films, and this might result from unreacted MoFx residues in the films. Annealing the films at 350 degrees C in a hydrogen rich environment yielded crystalline MoS2 and reduced the F concentration in the films. Optical transmission measurements yielded a bandgap of 1.3 eV. Finally, the authors observed that the MoS2 growth per cycle was accelerated when a fraction of the MoF6 pulses were substituted with diethyl zinc. Published by the AVS

  13. Transmission electron microscopy studies of HfO{sub 2} thin films grown by chloride-based atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials and Engineering Science, ANSTO, PMB 1, Menai, NSW 2234 (Australia)]. E-mail: drm@ansto.gov.au; Aidla, A. [Institute of Physics, University of Tartu, Taehe 4, EE-51010 Tartu (Estonia); Aarik, J. [Institute of Physics, University of Tartu, Taehe 4, EE-51010 Tartu (Estonia)

    2006-11-15

    Detailed transmission electron microscopy characterization of HfO{sub 2} films deposited on Si(1 0 0) using atomic layer deposition has been carried out. The influence of deposition temperature has been investigated. At 226 deg. C, a predominantly quasi-amorphous film containing large grains of cubic HfO{sub 2} (a {sub 0} = 5.08 A) was formed. Grain morphology enabled the nucleation sites to be determined. Hot stage microscopy showed that both the cubic phase and the quasi-amorphous phase were very resistant to thermal modification up to 500 deg. C. These observations suggest that nucleation sites for the growth of the crystalline cubic phase form at the growing surface of the film, rather homogeneously within the film. The films grown at higher temperatures (300-750 deg. C) are crystalline and monoclinic. The principal effects of deposition temperature were on: grain size, which coarsens at the highest temperature; roughness with increases at the higher temperatures due to the prismatic faceting, and texture, with texturing being strongest at intermediate temperatures. Detailed interfacial characterization shows that interfacial layers of SiO{sub 2} form at low and high temperatures. However, at intermediate temperatures, interfaces devoid of SiO{sub 2} were formed.

  14. Atomic structures of Ruddlesden-Popper faults in LaCoO3/SrRuO3 multilayer thin films induced by epitaxial strain

    Science.gov (United States)

    Wang, Wei; Zhang, Hui; Shen, Xi; Guan, Xiangxiang; Yao, Yuan; Wang, Yanguo; Sun, Jirong; Yu, Richeng

    2018-05-01

    In this paper, scanning transmission electron microscopy is used to study the microstructures of the defects in LaCoO3/SrRuO3 multilayer films grown on the SrTiO3 substrates, and these films have different thickness of SrRuO3 (SRO) layers. Several types of Ruddlesden-Popper (R.P.) faults at an atomic level are found, and these chemical composition fluctuations in the growth process are induced by strain fields originating from the film-film and film-substrate lattice mismatches. Furthermore, we propose four types of structural models based on the atomic arrangements of the R.P. planar faults, which severely affect the functional properties of the films.

  15. Ultra-Thin Atomic Layer Deposited TiN Films: Non-Linear I–V Behaviour and the Importance of Surface Passivation

    NARCIS (Netherlands)

    Van Hao, B.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    2011-01-01

    We report the electrical resistivity of atomic layer deposited TiN thin films in the thickness range 2.5-20 nm. The measurements were carried out using the circular transfer length method structures. For the films with thickness in the range of 10-20 nm, the measurements exhibited linear

  16. Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics.

    Science.gov (United States)

    Li, Guanhong; Li, Qunqing; Jin, Yuanhao; Zhao, Yudan; Xiao, Xiaoyang; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan

    2015-11-14

    Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 °C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

  17. The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO₂ Films Deposited by Atomic Layer Deposition.

    Science.gov (United States)

    Wilson, Rachel L; Simion, Cristian Eugen; Blackman, Christopher S; Carmalt, Claire J; Stanoiu, Adelina; Di Maggio, Francesco; Covington, James A

    2018-03-01

    Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO₂ films were exposed to different concentrations of CO, CH₄, NO₂, NH₃ and SO₂ to evaluate their gas sensitivities. These experiments showed that the TiO₂ film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH₄ and NH₃ exposure indicated typical n -type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

  18. The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Rachel L. Wilson

    2018-03-01

    Full Text Available Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes, at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

  19. Efficiencies of Eu{sup 3+} ions and hydrogen atoms as donors in ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp [NTT Device Innovation Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)

    2016-09-15

    The donor efficiencies of Eu{sup 3+} ions and hydrogen atoms in ZnO crystalline films were investigated with reference to that of Ga{sup 3+} ions. It was found that Eu{sup 3+} ions acted as extrinsic donors in ZnO:Eu films, yielding a resistivity of 1.8 × 10{sup −3} Ω cm at a doping level of 1 at. %. This value is comparable to one for intrinsic donors in undoped ZnO films. The conductivity was maintained as the deposition temperature was increased to 200 °C, and this is evidence for the contribution of extrinsic donors. Deposition of Ga-doped and Eu-doped ZnO films in an H{sub 2}O gas flow produced oxyhydrogenated ZnO:(Ga, H) and ZnO:(Eu, H) films in which the Ga{sup 3+} and Eu{sup 3+} donors were deactivated by oxidization. Nevertheless, hydrogen donors contributed to electrical conduction yielding a resistivity of 1 × 10{sup −2} Ω cm. Postannealing in an H{sub 2} gas ambient alleviated the excessive oxidization of the films and thereby reactivated the donor action of Ga{sup 3+} and Eu{sup 3+} ions, causing the resistivity to recover to 10{sup −3} Ω cm for ZnO:(Ga, H) and 10{sup −2} Ω cm for ZnO:(Eu, H). In contrast, vacuum annealing of ZnO:(Ga, H) and ZnO:(Eu, H) films increased resistivity through removal of hydrogen donors while not affecting the oxidized condition of the samples.

  20. Water-induced morphology changes in an ultrathin silver film studied by ultraviolet-visible, surface-enhanced Raman scattering spectroscopy and atomic force microscopy

    International Nuclear Information System (INIS)

    Li Xiaoling; Xu Weiqing; Jia Huiying; Wang Xu; Zhao Bing; Li Bofu; Ozaki, Yukihiro

    2005-01-01

    Water-induced changes in the morphology and optical properties of an ultrathin Ag film (3 nm thickness) have been studied by use of ultraviolet-visible (UV-Vis) spectroscopy, atomic force microscopy (AFM) and surface-enhanced Raman scattering (SERS) spectroscopy. A confocal micrograph shows that infinite regular Ag rings with almost uniform size (4 μm) emerge on the film surface after the ultrathin Ag film was immersed into water. The AFM measurement further confirms that the Ag rings consist of some metal holes with pillared edges. The UV-Vis spectrum shows that an absorption band at 486 nm of the Ag film after the immersion in water (I-Ag film) blue shifts by 66 nm with a significant decrease in absorbance, which is attributed to the macroscopic loss of some Ag atoms and the change in the morphology of the Ag film. The polarized UV-Vis spectra show that a band at 421 nm due to the normal component of the plasmon oscillation blue shifts after immersing the ultrathin Ag film into water. This band is found to be strongly angle-dependent for p-polarized light, indicating that the optical properties of the ultrathin Ag film are changed. The I-Ag film is SERS-active, and the SERS enhancement depends on different active sites on the film surface. Furthermore, it seems that the orientation of an adsorbate is related to the morphology of the I-Ag film

  1. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  2. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  3. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

    International Nuclear Information System (INIS)

    Yum, J.H.; Akyol, T.; Lei, M.; Ferrer, D.A.; Hudnall, Todd W.; Downer, M.; Bielawski, C.W.; Bersuker, G.; Lee, J.C.; Banerjee, S.K.

    2012-01-01

    In a previous study, atomic layer deposited (ALD) BeO exhibited less interface defect density and hysteresis, as well as less frequency dispersion and leakage current density, at the same equivalent oxide thickness than Al 2 O 3 . Furthermore, its self-cleaning effect was better. In this study, the physical and electrical characteristics of ALD BeO grown on Si and GaAs substrates are further evaluated as a gate dielectric layer in III–V metal-oxide-semiconductor devices using transmission electron microscopy, selective area electron diffraction, second harmonic generation, and electrical analysis. An as-grown ALD BeO thin film was revealed as a layered single crystal structure, unlike the well-known ALD dielectrics that exhibit either poly-crystalline or amorphous structures. Low defect density in highly ordered ALD BeO film, less variability in electrical characteristics, and great stability under electrical stress were demonstrated. - Highlights: ► BeO is an excellent electrical insulator, but good thermal conductor. ► Highly crystalline film of BeO has been grown using atomic layer deposition. ► An ALD BeO precursor, which is not commercially available, has been synthesized. ► Physical and electrical characteristics have been investigated.

  4. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-08-31

    We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

  5. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    International Nuclear Information System (INIS)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-01-01

    We report the growth and characterization of III-nitride ternary thin films (Al x Ga 1−x N, In x Al 1−x N and In x Ga 1−x N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures

  6. Characterization and gas-sensing behavior of an iron oxide thin film prepared by atomic layer deposition

    International Nuclear Information System (INIS)

    Aronniemi, Mikko; Saino, J.; Lahtinen, J.

    2008-01-01

    In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the α-Fe 2 O 3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe 3+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. When exposed to O 2 and CO, a typical n-type response is observed

  7. X-ray scattering of calcite thin films deposited by atomic layer deposition: Studies in air and in calcite saturated water solution

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Peng [Lujan Neutron Scattering Center, Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, NM 87545 (United States); Hudak, Michael R.; Lerner, Allan [Earth and Environmental Sciences Division, Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, NM 87545 (United States); Grubbs, Robert K. [Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185 (United States); Wang, Shanmin [Lujan Neutron Scattering Center, Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, NM 87545 (United States); Zhang, Zhan; Karapetrova, Evguenia [Advance Photon Source, Argonne National Laboratory, 9700S Cass Ave, Argonne, IL 60439 (United States); Hickmott, Donald [Earth and Environmental Sciences Division, Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, NM 87545 (United States); Majewski, Jaroslaw, E-mail: jarek@lanl.gov [Lujan Neutron Scattering Center, Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, NM 87545 (United States)

    2014-08-28

    Carbonates are one of the most abundant groups of minerals in earth systems and are important in many geological settings and industrial processes. Calcite (CaCO{sub 3}) thin films produced by atomic layer deposition offer a method to evaluate the surficial properties of carbonates as well as interactions at the carbonate–fluid interface. Using synchrotron X-ray reflectivity and X-ray diffraction, these films are observed to be porous, polycrystalline, and have crystallites oriented with the major (104) calcite cleavage plane parallel to the surface of the z-cut single crystal quartz substrate. An Al{sub 2}O{sub 3} buffer layer, present between quartz and the calcite film, does not affect the as-deposited film, but does influence how the films reorganize in contact with fluid. Without a buffer layer, calcite reorients its crystallites to have populations of (006) and (030) parallel to the substrate, while those with an Al{sub 2}O{sub 3} buffer layer become more amorphous. Amorphous films may represent an analog to amorphous calcium carbonate and provide insights into that material's thermophysical behavior. Due to a higher percentage of pore spaces available for fluid infiltration, films deposited at higher temperature make the calcite thin films more susceptible to amorphization. These films are chemically similar, but structurally dissimilar to bulk natural calcite. Nevertheless, they can be a complementary system to traditional single crystal X-ray surface scattering studies on carbonates, particularly for important but less common minerals, to evaluate mineral–fluid interfacial interactions. - Highlights: • Atomic layer deposition (ALD) used to produce calcite films. • Calcite film orientation and crystallinity depend on ALD parameters. • ALD calcite films can be both crystalline and amorphous. • Interaction of water with films can re-orient or amorphize the films. • ALD calcite films may be useful to study carbonate–fluid interfacial

  8. X-ray scattering of calcite thin films deposited by atomic layer deposition: Studies in air and in calcite saturated water solution

    International Nuclear Information System (INIS)

    Wang, Peng; Hudak, Michael R.; Lerner, Allan; Grubbs, Robert K.; Wang, Shanmin; Zhang, Zhan; Karapetrova, Evguenia; Hickmott, Donald; Majewski, Jaroslaw

    2014-01-01

    Carbonates are one of the most abundant groups of minerals in earth systems and are important in many geological settings and industrial processes. Calcite (CaCO 3 ) thin films produced by atomic layer deposition offer a method to evaluate the surficial properties of carbonates as well as interactions at the carbonate–fluid interface. Using synchrotron X-ray reflectivity and X-ray diffraction, these films are observed to be porous, polycrystalline, and have crystallites oriented with the major (104) calcite cleavage plane parallel to the surface of the z-cut single crystal quartz substrate. An Al 2 O 3 buffer layer, present between quartz and the calcite film, does not affect the as-deposited film, but does influence how the films reorganize in contact with fluid. Without a buffer layer, calcite reorients its crystallites to have populations of (006) and (030) parallel to the substrate, while those with an Al 2 O 3 buffer layer become more amorphous. Amorphous films may represent an analog to amorphous calcium carbonate and provide insights into that material's thermophysical behavior. Due to a higher percentage of pore spaces available for fluid infiltration, films deposited at higher temperature make the calcite thin films more susceptible to amorphization. These films are chemically similar, but structurally dissimilar to bulk natural calcite. Nevertheless, they can be a complementary system to traditional single crystal X-ray surface scattering studies on carbonates, particularly for important but less common minerals, to evaluate mineral–fluid interfacial interactions. - Highlights: • Atomic layer deposition (ALD) used to produce calcite films. • Calcite film orientation and crystallinity depend on ALD parameters. • ALD calcite films can be both crystalline and amorphous. • Interaction of water with films can re-orient or amorphize the films. • ALD calcite films may be useful to study carbonate–fluid interfacial interactions

  9. The effect of deposition energy of energetic atoms on the growth and structure of ultrathin amorphous carbon films studied by molecular dynamics simulations

    KAUST Repository

    Wang, N

    2014-05-16

    The growth and structure of ultrathin amorphous carbon films was investigated by molecular dynamics simulations. The second-generation reactive-empirical-bond-order potential was used to model atomic interactions. Films with different structures were simulated by varying the deposition energy of carbon atoms in the range of 1-120 eV. Intrinsic film characteristics (e.g. density and internal stress) were determined after the system reached equilibrium. Short- and intermediate-range carbon atom ordering is examined in the context of atomic hybridization and ring connectivity simulation results. It is shown that relatively high deposition energy (i.e., 80 eV) yields a multilayer film structure consisting of an intermixing layer, bulk film and surface layer, consistent with the classical subplantation model. The highest film density (3.3 g cm-3), sp3 fraction (∼43%), and intermediate-range carbon atom ordering correspond to a deposition energy of ∼80 eV, which is in good agreement with experimental findings. © 2014 IOP Publishing Ltd.

  10. Atomic layer deposition of Ru thin film using N{sub 2}/H{sub 2} plasma as a reactant

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Tae Eun [Busan Center, Korea Basic Science Institute, 1275 Jisadong, Gangseogu, Busan, 618-230 (Korea, Republic of); Mun, Ki-Yeung; Choi, Sang-Kyung; Park, Ji-Yoon [School of Materials Science and Engineering Yeungnam University 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of); Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering Yeungnam University 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of); Cheon, Taehoon [Center for Core Research Facilities, Daegu Gyeongbuk Institute of Science and Technology, Sang-ri, Hyeonpung-myeon, Dalseong-gun, Daegu (Korea, Republic of); Kim, Woo Kyoung [School of Chemical Engineering, Yeungnam University, 214-1, Dae-dong, Gyeongsan-si, Gyeongsangbuk-do, 712-749 (Korea, Republic of); Lim, Byoung-Yong; Kim, Sunjung [School of Materials Science and Engineering, University of Ulsan, Mugeo-dong, Nam-go, Ulsan, 680-749 (Korea, Republic of)

    2012-07-31

    Ruthenium (Ru) thin films were grown by atomic layer deposition using IMBCHRu [({eta}6-1-Isopropyl-4-MethylBenzene)({eta}4-CycloHexa-1,3-diene)Ruthenium(0)] as a precursor and a nitrogen-hydrogen mixture (N{sub 2}/H{sub 2}) plasma as a reactant, at the substrate temperature of 270 Degree-Sign C. In the wide range of the ratios of N{sub 2} and total gas flow rates (fN{sub 2}/N{sub 2} + H{sub 2}) from 0.12 to 0.70, pure Ru films with negligible nitrogen incorporation of 0.5 at.% were obtained, with resistivities ranging from {approx} 20 to {approx} 30 {mu} Ohm-Sign cm. A growth rate of 0.057 nm/cycle and negligible incubation cycle for the growth on SiO{sub 2} was observed, indicating the fast nucleation of Ru. The Ru films formed polycrystalline and columnar grain structures with a hexagonal-close-packed phase. Its resistivity was dependent on the crystallinity, which could be controlled by varying the deposition parameters such as plasma power and pulsing time. Cu was electroplated on a 10-nm-thick Ru film. Interestingly, it was found that the nitrogen could be incorporated into Ru at a higher reactant gas ratio of 0.86. The N-incorporated Ru film ({approx} 20 at.% of N) formed a nanocrystalline and non-columnar grain structure with the resistivity of {approx} 340 {mu} Ohm-Sign cm. - Highlights: Black-Right-Pointing-Pointer Atomic layer deposition (ALD) of Ru and N-incorporated Ru film using N{sub 2}/H{sub 2} plasma. Black-Right-Pointing-Pointer The growth rate of 0.057 nm/cycle and negligible incubation cycle. Black-Right-Pointing-Pointer A low resistivity of Ru ({approx} 16.5 {mu} Ohm-Sign cm) at the deposition temperature of 270 Degree-Sign C. Black-Right-Pointing-Pointer Electroplating of Cu on a 10-nm-thick ALD-Ru film.

  11. A Method for Atomic Layer Deposition of Complex Oxide Thin Films

    Science.gov (United States)

    2012-12-01

    characterization. Fourth, the phase of the crystallized film was analyzed in detail to deter- mine behavior of the films post-annealing. XRD was used extensively for...Schneider. Stacking of ceramic in- verse opals with different lattice constants. Journal of the American Ceramic Society, 95(7):2226–2235, July 2012. [52

  12. Analysis of deuterium in V-Fe5at.% film by atom probe tomography (APT)

    KAUST Repository

    Gemma, Ryota; Al-Kassab, Talaat; Kirchheim, Reiner; Pundt, Astrid A.

    2011-01-01

    V-Fe5at.% 2 and 10-nm thick single layered films were prepared by ion beam sputtering on W substrate. They were loaded with D from gas phase at 0.2 Pa and at 1 Pa, respectively. Both lateral and depth D distribution of these films was investigated

  13. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho; Wang, Zhenwei; Hedhili, Mohamed N.; Wehbe, Nimer; Alshareef, Husam N.

    2017-01-01

    , the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn

  14. Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jun Beom; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr [School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si 712-749 (Korea, Republic of); Han, Won Seok [UP Chemical 576, Chilgoedong, Pyeongtaek-si, Gyeonggi-do 459-050 (Korea, Republic of); Lee, Do-Joong [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2016-07-15

    Tungsten carbides (WC{sub x}) thin films were deposited on thermally grown SiO{sub 2} substrates by atomic layer deposition (ALD) using a fluorine- and nitrogen-free W metallorganic precursor, tungsten tris(3-hexyne) carbonyl [W(CO)(CH{sub 3}CH{sub 2}C ≡ CCH{sub 2}CH{sub 3}){sub 3}], and N{sub 2} + H{sub 2} plasma as the reactant at deposition temperatures between 150 and 350 °C. The present ALD-WC{sub x} system showed an ALD temperature window between 200 and 250 °C, where the growth rate was independent of the deposition temperature. Typical ALD characteristics, such as self-limited film growth and a linear dependency of the film grown on the number of ALD cycles, were observed, with a growth rate of 0.052 nm/cycle at a deposition temperature of 250 °C. The ALD-WC{sub x} films formed a nanocrystalline structure with grains, ∼2 nm in size, which consisted of hexagonal W{sub 2}C, WC, and nonstoichiometric cubic β-WC{sub 1−x} phase. Under typical deposition conditions at 250 °C, an ALD-WC{sub x} film with a resistivity of ∼510 μΩ cm was deposited and the resistivity of the ALD-WC{sub x} film could be reduced even further to ∼285 μΩ cm by further optimizing the reactant pulsing conditions, such as the plasma power. The step coverage of ALD-WC{sub x} film was ∼80% on very small sized and dual trenched structures (bottom width of 15 nm and aspect ratio of ∼6.3). From ultraviolet photoelectron spectroscopy, the work function of the ALD-WC{sub x} film was determined to be 4.63 eV. Finally, the ultrathin (∼5 nm) ALD-WC{sub x} film blocked the diffusion of Cu, even up to 600 °C, which makes it a promising a diffusion barrier material for Cu interconnects.

  15. Structure of the short-range atomic order of WO3 amorphous films

    International Nuclear Information System (INIS)

    Olevskij, S.S.; Sergeev, M.S.; Tolstikhina, A.L.; Avilov, A.S.; Shkornyakov, S.M.; Semiletov, S.A.

    1984-01-01

    To study the causes of electrochromism manifestation in thin tungsten oxide films, the structure of WO 3 amorphous films has been investigated. The films were obtained by three different methods: by W(CO) 6 tungsten carbonyl pyrolysis, by high-frequency ion-plasma sputtering of a target prepared by WO 3 powder sintering, and by WO 3 powder thermal evaporation. Monocrystalline wafers of silicon and sodium chloride were used as substrates. The structure of short-range order in WO 3 amorphous films varies versus, the method of preparation in compliance with the type of polyhedral elements, (WO 6 , WO 5 ) and with the character of their packing (contacts via edges or vertices). Manifestation of electroc ro mism in WO 3 films prepared by varions methods and having different structure of short-range order is supposed to be realized through various mechanisms. One cannot exclude a potential simultaneous effect of the two coloration mechanisms

  16. Impedance Characterization of the Capacitive field-Effect pH-Sensor Based on a thin-Layer Hafnium Oxide Formed by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Michael LEE

    2014-05-01

    Full Text Available As a sensing element, silicon dioxide (SiO2 has been applied within ion-sensitive field effect transistors (ISFET. However, a requirement of increasing pH-sensitivity and stability has observed an increased number of insulating materials that obtain high-k gate being applied as FETs. The increased high-k gate reduces the required metal oxide layer and, thus, the fabrication of thin hafnium oxide (HfO2 layers by atomic layer deposition (ALD has grown with interest in recent years. This metal oxide presents advantageous characteristics that can be beneficial for the advancements within miniaturization of complementary metal oxide semiconductor (CMOS technology. In this article, we describe a process for fabrication of HfO2 based on ALD by applying water (H2O as the oxygen precursor. As a first, electrochemical impedance spectroscopy (EIS measurements were performed with varying pH (2-10 to demonstrate the sensitivity of HfO2 as a potential pH sensing material. The Nyquist plot demonstrates a high clear shift of the polarization resistance (Rp between pH 6-10 (R2 = 0.9986, Y = 3,054X + 12,100. At acidic conditions (between pH 2-10, the Rp change was small due to the unmodified oxide gate (R2 = 0.9655, Y = 2,104X + 4,250. These preliminary results demonstrate the HfO2 substrate functioned within basic to neutral conditions and establishes a great potential for applying HfO2 as a dielectric material for future pH measuring FET sensors.

  17. Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

    International Nuclear Information System (INIS)

    Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Gordon, Roy G.; Mankad, Ravin; Haight, Richard; Gunawan, Oki; Mitzi, David B.

    2014-01-01

    Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10 19 to 10 20 cm −3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10 19 to 10 14 cm −3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications

  18. Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Park, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Gordon, Roy G., E-mail: gordon@chemistry.harvard.edu [Harvard University, Cambridge, Massachusetts 02138 (United States); Mankad, Ravin; Haight, Richard; Gunawan, Oki [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Mitzi, David B. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Duke University, Durham, North Carolina 27708 (United States)

    2014-11-17

    Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10{sup 19} to 10{sup 20} cm{sup −3} with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10{sup 19} to 10{sup 14} cm{sup −3} for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.

  19. Atomic force microscopy study of TiO2 sol-gel films thermally treated under NH3 atmosphere

    International Nuclear Information System (INIS)

    Trapalis, C.; Todorova, N.; Anastasescu, M.; Anastasescu, C.; Stoica, M.; Gartner, M.; Zaharescu, M.; Stoica, T.

    2009-01-01

    Multilayered TiO 2 films were obtained by sol-gel and dipping deposition on quartz substrate followed by thermal treatment under NH 3 atmosphere. In an attempt to understand the close relationship between microstructural characteristics and the synthesis parameters, a systematic research of the structure and the morphology of NH 3 modified TiO 2 sol-gel films by XRD and Atomic Force Microscopy is reported. The surface morphology has been evaluated in terms of grains size, fractal dimension and surface roughness. For each surface, it was found a self-similar behavior (with mean fractal dimension in the range of 2.67-3.00) related to an optimum morphology favorable to maintain a nano-size distribution of the grains. The root mean square (RMS) roughness of the samples was found to be in the range of 0.72-6.02 nm.

  20. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

    2013-01-01

    ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

  1. Phase-coherent electron transport in (Zn, Al)Ox thin films grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M.

    2014-11-01

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)Ox thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al2O3 sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length ( l φ ∝ T - 3 / 4 ), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  2. Phase-coherent electron transport in (Zn, Al)O{sub x} thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Ajimsha, R. S.; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2014-11-24

    A clear signature of disorder induced quantum-interference phenomena leading to phase-coherent electron transport was observed in (Zn, Al)O{sub x} thin films grown by atomic layer deposition. The degree of static-disorder was tuned by varying the Al concentration through periodic incorporation of Al{sub 2}O{sub 3} sub-monolayer in ZnO. All the films showed small negative magnetoresistance due to magnetic field suppressed weak-localization effect. The temperature dependence of phase-coherence length (l{sub φ}∝T{sup −3/4}), as extracted from the magnetoresistance measurements, indicated electron-electron scattering as the dominant dephasing mechanism. The persistence of quantum-interference at relatively higher temperatures up to 200 K is promising for the realization of ZnO based phase-coherent electron transport devices.

  3. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

    Science.gov (United States)

    Sheng, Jiazhen; Han, Ki-Lim; Hong, TaeHyun; Choi, Wan-Ho; Park, Jin-Seong

    2018-01-01

    The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types (directions). The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields. Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium.

  4. Atomic force microscopy and nanoindentation investigation of polydimethylsiloxane elastomeric substrate compliancy for various sputtered thin film morphologies.

    Science.gov (United States)

    Maji, Debashis; Das, Soumen

    2018-03-01

    Crack free electrically continuous metal thin films over soft elastomeric substrates play an integral part in realization of modern day flexible bioelectronics and biosensors. Under nonoptimized deposition conditions, delamination, and/or cracking of the top film as well as the underlying soft substrate hinders optimal performance of these devices. Hence it is very important to understand and control not only the various deposition factors like power, time, or deposition pressure but also investigate the various interfacial physics playing a critical role in assuring thin film adhesion and substrate compliancy. In the present study, various nanomechanical information of the underlying substrate, namely, crack profile, average roughness, Young's modulus, and adhesion force were studied for uncracked and cracked polydimethylsiloxane (PDMS) surfaces along with pristine and conventional plasma treated PDMS samples as control. Quantification of the above parameters were done using three-dimensional surface profiler, scanning electron microscopy, nanoindentation, and atomic force microscopy techniques to elucidate the modulus range, average roughness, and adhesion force. Comparative analysis with control revealed remarkable similarity between increased modulus values, increased surface roughness, and reduced adhesion force accounting for reduced substrate compliancy and resulting in film cracking or buckling which are critical for development of various bioflexible devices. © 2017 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 106A: 725-737, 2018. © 2017 Wiley Periodicals, Inc.

  5. Characterization of Films with Thickness Less than 10 nm by Sensitivity-Enhanced Atomic Force Acoustic Microscopy

    Directory of Open Access Journals (Sweden)

    Muraoka Mikio

    2011-01-01

    Full Text Available Abstract We present a method for characterizing ultrathin films using sensitivity-enhanced atomic force acoustic microscopy, where a concentrated-mass cantilever having a flat tip was used as a sensitive oscillator. Evaluation was aimed at 6-nm-thick and 10-nm-thick diamond-like carbon (DLC films deposited, using different methods, on a hard disk for the effective Young's modulus defined as E/(1 - ν2, where E is the Young's modulus, and ν is the Poisson's ratio. The resonant frequency of the cantilever was affected not only by the film's elasticity but also by the substrate even at an indentation depth of about 0.6 nm. The substrate effect was removed by employing a theoretical formula on the indentation of a layered half-space, together with a hard disk without DLC coating. The moduli of the 6-nm-thick and 10-nm-thick DLC films were 392 and 345 GPa, respectively. The error analysis showed the standard deviation less than 5% in the moduli.

  6. Passivation of pigment-grade TiO2 particles by nanothick atomic layer deposited SiO2 films

    International Nuclear Information System (INIS)

    King, David M; Liang Xinhua; Weimer, Alan W; Burton, Beau B; Akhtar, M Kamal

    2008-01-01

    Pigment-grade TiO 2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO 2 and Al 2 O 3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO 2 films were deposited using tris-dimethylaminosilane (TDMAS) and H 2 O 2 at 500 deg. C. Trimethylaluminum and water were used as precursors for Al 2 O 3 ALD at 177 deg. C. The photocatalytic activity of anatase pigment-grade TiO 2 was decreased by 98% after the deposition of 2 nm SiO 2 films. H 2 SO 4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO 2 digest rate was 40 times faster for uncoated TiO 2 than SiO 2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H 2 O 2 chemistry can deposit high quality, fully dense SiO 2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO 2 particles

  7. Ellipsometry study on Pd thin film grown by atomic layer deposition with Maxwell–Garnett effective medium approximation model

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yihang; Zhou, Xueqi; Cao, Kun [State Key Laboratory of Digital of Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Xiuguo; Deng, Zhang [State Key Laboratory of Digital of Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Liu, Shiyuan, E-mail: shyliu@hust.edu.cn [State Key Laboratory of Digital of Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Shan, Bin [State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Rong, E-mail: rongchen@mail.hust.edu.cn [State Key Laboratory of Digital of Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-10-30

    Maxwell–Garnett effective medium approximation (MG-EMA) model is chosen to study Pd ultrathin film grown on Si substrate, as well as its growth on self-assembled monolayers (SAMs) modified substrate respectively. The general oscillator (GO) model with one Drude and two Lorentz oscillators is firstly applied to fix the optical constants of Pd. Compared with Pd bulk model, MG-EMA model with GO is more reliable to predict the film thickness verified by X-ray reflection test. The stable growth rate on Si substrate reveals our methods are feasible and the quartz crystal microbalance measurement confirms the stability of the ALD chamber. For Pd coverage, MG-EMA fitting result is similar to the statistical computation from scanning electron microscope when Pd ALD cycles are over 400, while large bias exists for cycles under 400, might be due to that air is not the proper filling medium between nanoparticles. Then we change the filling medium into SAMs as a comparison, better fitting performance is obtained. It is demonstrated that the filling medium between nanoparticles is important for the application of MG-EMA model. - Highlights: • Ultrathin Pd thin films were grown by atomic layer deposition. • The measurement of thin film was important to understand initial growth behavior. • Maxwell–Garnett effective medium approximation model was applied. • Pd nanoparticle size and coverage were studied. • The filling medium between nanoparticles was important for model application.

  8. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  9. Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications

    Science.gov (United States)

    Privitera, S. M. S.; Sousa, V.; Bongiorno, C.; Navarro, G.; Sabbione, C.; Carria, E.; Rimini, E.

    2018-04-01

    The atomic diffusion and compositional variations upon melting have been studied by transmission electron microscopy and electron energy loss spectroscopy in Ge rich GeSbTe films, with a composition optimized for memory applications. Melting and quenching has been achieved by laser pulses, in order to study pure thermal diffusion without electric field induced electromigration. The effect of different laser energy densities has been investigated. The diffusion of Ge atoms in the molten phase is found to be a prominent mechanism and, by employing finite elements computational analysis, a diffusion coefficient of Ge on the order of 5  ×  10-5 cm2 s-1 has been estimated.

  10. Optical emission studies of atomic and ionic species in the ionized sputter-deposition process of magnesium oxide thin films

    International Nuclear Information System (INIS)

    Matsuda, Y.; Koyama, Y.; Iwaya, M.; Shinohara, M.; Fujiyama, H.

    2005-01-01

    Planar magnetron (PM) power and ICP-RF power dependences of the optical emission intensities of excited atomic and ionic species in the reactive ionized sputter-deposition of magnesium oxide (MgO) thin films were investigated. With the increase in PM power at constant ICP-RF power, Mg I emission intensity increased and Ar I emission intensity gradually decreased. With the increase in ICP-RF power at constant PM power, the Mg I emission intensity increased at lower ICP-RF power and then gradually decreased at higher ICP-RF power; on the contrary, Ar I emission intensity monotonically increased. Emission intensity of atomic oxygen was negligibly small compared with those of Mg I and Ar I under the metallic sputtering mode condition

  11. Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

    Science.gov (United States)

    Giustino, Feliciano; Umari, Paolo; Pasquarello, Alfredo

    2003-12-31

    Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

  12. Rubidium distribution at atomic scale in high efficient Cu(In,Ga)Se2 thin-film solar cells

    Science.gov (United States)

    Vilalta-Clemente, Arantxa; Raghuwanshi, Mohit; Duguay, Sébastien; Castro, Celia; Cadel, Emmanuel; Pareige, Philippe; Jackson, Philip; Wuerz, Roland; Hariskos, Dimitrios; Witte, Wolfram

    2018-03-01

    The introduction of a rubidium fluoride post deposition treatment (RbF-PDT) for Cu(In,Ga)Se2 (CIGS) absorber layers has led to a record efficiency up to 22.6% for thin-film solar cell technology. In the present work, high efficiency CIGS samples with RbF-PDT have been investigated by atom probe tomography (APT) to reveal the atomic distribution of all alkali elements present in CIGS layers and compared with non-treated samples. A Scanning Electron Microscopy Dual beam station (Focused Ion Beam-Gas Injection System) as well as Transmission Kikuchi diffraction is used for atom probe sample preparation and localization of the grain boundaries (GBs) in the area of interest. The analysis of the 3D atomic scale APT reconstructions of CIGS samples with RbF-PDT shows that inside grains, Rb is under the detection limit, but the Na concentration is enhanced as compared to the reference sample without Rb. At the GBs, a high concentration of Rb reaching 1.5 at. % was found, and Na and K (diffusing from the glass substrate) are also segregated at GBs but at lower concentrations as compared to Rb. The intentional introduction of Rb leads to significant changes in the chemical composition of CIGS matrix and at GBs, which might contribute to improve device efficiency.

  13. Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Bouaoud, A.; Rmili, A.; Ouachtari, F.; Louardi, A.; Chtouki, T. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Ecole Nationale des Sciences Appliquees de Kenitra (ENSAK) (Morocco)

    2013-01-15

    Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH{sub 3}COOH){sub 2} and hexahydrated nickel chloride (NiCl{sub 2}{center_dot}6H{sub 2}O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 Degree-Sign C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 Multiplication-Sign 10{sup -3} {Omega} cm at room temperature. -- Highlights: Black-Right-Pointing-Pointer The optical transmittance of Ni doped ZnO varies between 75 and 85%. Black-Right-Pointing-Pointer The energy gap of these films decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02. Black-Right-Pointing-Pointer The energy gap increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. Black-Right-Pointing-Pointer The films obtained with [Ni]/[Zn] ratio = 0.02 show minimum resistivity of 2

  14. Dynamics of space and polarization charges of ferroelectric thin films measured by atomic force microscopy

    International Nuclear Information System (INIS)

    Oh, Y.J.; Lee, J.H.; Jo, W.

    2006-01-01

    Retention behavior and local hysteresis characteristics in Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films on Pt electrodes have been investigated by electrostatic force microscopy (EFM). A sol-gel method is used to synthesize PZT thin films and drying conditions are carefully explored over a wide range of temperature. Decay and retention mechanisms of single-poled and reverse-poled regions of the ferroelectric thin films are explained by space charge redistribution. Trapping behavior of space charges is dependent on the nature of interface between ferroelectric thin films and bottom electrodes. Local measurement of polarization-electric field curves by EFM shows inhomogeneous space charge entrapment

  15. Growth analysis of cadmium sulfide thin films by atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H.R.; Dhere, R.G.; Ramanathan, K. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    CdS films have been deposited by solution growth on SnO{sub 2} and glass substrates. Nucleation on SnO{sub 2} occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO{sub 2} depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.

  16. Heat capacity measurements of atoms and molecules adsorbed on evaporated metal films

    International Nuclear Information System (INIS)

    Kenny, T.W.

    1989-05-01

    Investigations of the properties of absorbed monolayers have received great experimental and theoretical attention recently, both because of the importance of surface processes in practical applications such as catalysis, and the importance of such systems to the understanding of the fundamentals of thermodynamics in two dimensions. We have adapted the composite bolometer technology to the construction of microcalorimeters. For these calorimeters, the adsorption substrate is an evaporated film deposited on one surface of an optically polished sapphire wafer. This approach has allowed us to make the first measurements of the heat capacity of submonolayer films of 4 He adsorbed on metallic films. In contrast to measurements of 4 He adsorbed on all other insulating substrates, we have shown that 4 He on silver films occupies a two-dimensional gas phase over a broad range of coverages and temperatures. Our apparatus has been used to study the heat capacity of Indium flakes. CO multilayers, 4 He adsorbed on sapphire and on Ag films and H 2 adsorbed on Ag films. The results are compared with appropriate theories. 68 refs., 19 figs

  17. Reaction Mechanisms of the Atomic Layer Deposition of Tin Oxide Thin Films Using Tributyltin Ethoxide and Ozone.

    Science.gov (United States)

    Nanayakkara, Charith E; Liu, Guo; Vega, Abraham; Dezelah, Charles L; Kanjolia, Ravindra K; Chabal, Yves J

    2017-06-20

    Uniform and conformal deposition of tin oxide thin films is important for several applications in electronics, gas sensing, and transparent conducting electrodes. Thermal atomic layer deposition (ALD) is often best suited for these applications, but its implementation requires a mechanistic understanding of the initial nucleation and subsequent ALD processes. To this end, in situ FTIR and ex situ XPS have been used to explore the ALD of tin oxide films using tributyltin ethoxide and ozone on an OH-terminated, SiO 2 -passivated Si(111) substrate. Direct chemisorption of tributyltin ethoxide on surface OH groups and clear evidence that subsequent ligand exchange are obtained, providing mechanistic insight. Upon ozone pulse, the butyl groups react with ozone, forming surface carbonate and formate. The subsequent tributyltin ethoxide pulse removes the carbonate and formate features with the appearance of the bands for CH stretching and bending modes of the precursor butyl ligands. This ligand-exchange behavior is repeated for subsequent cycles, as is characteristic of ALD processes, and is clearly observed for deposition temperatures of 200 and 300 °C. On the basis of the in situ vibrational data, a reaction mechanism for the ALD process of tributyltin ethoxide and ozone is presented, whereby ligands are fully eliminated. Complementary ex situ XPS depth profiles confirm that the bulk of the films is carbon-free, that is, formate and carbonate are not incorporated into the film during the deposition process, and that good-quality SnO x films are produced. Furthermore, the process was scaled up in a cross-flow reactor at 225 °C, which allowed the determination of the growth rate (0.62 Å/cycle) and confirmed a self-limiting ALD growth at 225 and 268 °C. An analysis of the temperature-dependence data reveals that growth rate increases linearly between 200 and 300 °C.

  18. Conducting atomic force microscopy studies on doped CulnO2 thin films for resistive memory device applications

    International Nuclear Information System (INIS)

    Mehta, B.R.

    2009-01-01

    Full text: Delafosite thin films have interesting structural, optical and electronic properties due to the highly anisotropic crystal structure and possibility of bipolar conductivity. In this presentation, optical, structural and electrical properties of Sn (n type) and Ca (p type) doped CulnO 2 layers grown by rf magnetron sputtering technique will be discussed. Depending on doping and deposition temperature, these films show nanocolumnar structure with (110) and (006) preferred orientations. The observed decrease in activation energy from 0.9 eV to about 0.10 eV and a large decrease in conductivity from 2.11 x 10 -10 Scm -1 to 1.66 x 10 -1 Scm -1 on Sn doping has been explained due to the change in preferred orientation along with efficient doping. Our results show that crystallite orientation is the most important factor controlling the electrical conduction in delafossite thin films. The anisotropy of electrical conduction along (006) and (110) directions in tin doped samples has been further established using conducting atomic force microscopy (CAFM) measurements. The CAFM measurements shows the presence of nanoconducting region when the current flow direction is aligned along the BO 6 layer and complete absence of conducting regions when the current direction is perpendicular to the film surface. Resistive memory devices based on Sn and Ca doped CulnO 2 films show stable and reproducible 'on' and 'off' states. CAFM measurement on these devices carried out before and after 'forming' show the growth of nanoconducting filaments on the application of a threshold voltage. It is possible to control resistance in the 'on' and 'off' states and magnitude of the forming and switching voltages by controlling the doping concentration and crystallite orientation in CulnO 2 layers

  19. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rui [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Han, Lihao [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Huang, Zhuangqun; Ferrer, Ivonne M. [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Smets, Arno H.M.; Zeman, Miro [Photovoltaic Materials and Devices (PVMD) Laboratory, Delft University of Technology, P.O. Box 5031, GA Delft 2600 (Netherlands); Brunschwig, Bruce S., E-mail: bsb@caltech.edu [Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Lewis, Nathan S., E-mail: nslewis@caltech.edu [Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, CA 91125 (United States); Beckman Institute, California Institute of Technology, Pasadena, CA 91125 (United States); Division of Chemistry and Chemical Engineering, California Institute of Technology, 210 Noyes Laboratory 127-72, Pasadena, CA 91125 (United States); Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125 (United States)

    2015-07-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe{sub 3} and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films.

  20. A low-temperature synthesis of electrochemical active Pt nanoparticles and thin films by atomic layer deposition on Si(111) and glassy carbon surfaces

    International Nuclear Information System (INIS)

    Liu, Rui; Han, Lihao; Huang, Zhuangqun; Ferrer, Ivonne M.; Smets, Arno H.M.; Zeman, Miro; Brunschwig, Bruce S.; Lewis, Nathan S.

    2015-01-01

    Atomic layer deposition (ALD) was used to deposit nanoparticles and thin films of Pt onto etched p-type Si(111) wafers and glassy carbon discs. Using precursors of MeCpPtMe 3 and ozone and a temperature window of 200–300 °C, the growth rate was 80–110 pm/cycle. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to analyze the composition, structure, morphology, and thickness of the ALD-grown Pt nanoparticle films. The catalytic activity of the ALD-grown Pt for the hydrogen evolution reaction was shown to be equivalent to that of e-beam evaporated Pt on glassy carbon electrode. - Highlights: • Pure Pt films were grown by atomic layer deposition (ALD) using MeCpPtMe3 and ozone. • ALD-grown Pt thin films had high growth rates of 110 pm/cycle. • ALD-grown Pt films were electrocatalytic for hydrogen evolution from water. • Electrocatalytic activity of the ALD Pt films was equivalent to e-beam deposited Pt. • No carbon species were detected in the ALD-grown Pt films

  1. Investigation of Al{sub 2}O{sub 3} barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

    Energy Technology Data Exchange (ETDEWEB)

    Maindron, Tony; Aventurier, Bernard [LETI/DOPT/SCOOP/Laboratoire des Composants pour la Visualisation, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Ghazouani, Ahlem; Jullien, Tony [LETI/DTSI/SDEP/Laboratoire Dépôt Equipe 2, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Rochat, Névine [LETI/DTSI/Service de Caractérisation des Matériaux et Composants, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Simon, Jean-Yves; Viasnoff, Emilie [LETI/DOPT/SCOOP/Laboratoire des Composants pour la Visualisation, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

    2013-12-02

    Al{sub 2}O{sub 3} films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ{sub 3}) films made onto silicon wafers. It has been found that a thick ALD-deposited Al{sub 2}O{sub 3} layer (> 11 nm) greatly prevents the photo-oxidation of AlQ{sub 3} films when exposed to continuous UV irradiation (350 mW/cm{sup 2}). Thin Al{sub 2}O{sub 3} thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al{sub 2}O{sub 3} layer have been easily observed as non-fluorescent AlQ{sub 3} singularities, or black spots, under UV light on the system Si/AlQ{sub 3}/Al{sub 2}O{sub 3} stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h{sup −1}·cm{sup −2} and 0.243 h{sup −1}·cm{sup −2} respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO{sub 2} onto the Si/AlQ{sub 3}/Al{sub 2}O{sub 3} sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h{sup −1}·cm{sup −2} and 0.04 h{sup −1}·cm{sup −2} respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al{sub 2}O{sub 3} films and confirm the general idea that a single Al{sub 2}O{sub 3} ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an

  2. Thin film characterization by total reflection x-ray fluorescence

    International Nuclear Information System (INIS)

    Danel, Adrien; Nolot, Emmanuel; Veillerot, Marc; Olivier, Segolene; Decorps, Tifenn; Calvo-Munoz, Maria-Luisa; Hartmann, Jean-Michel; Lhostis, Sandrine; Kohno, Hiroshi; Yamagami, Motoyuki; Geoffroy, Charles

    2008-01-01

    Sensitive and accurate characterization of films thinner than a few nm used in nanoelectronics represents a challenge for many conventional production metrology tools. With capabilities in the 10 10 at/cm 2 , methods usually dedicated to contamination analysis appear promising, especially Total-reflection X-Ray Fluorescence (TXRF). This study shows that under usual configuration for contamination analysis, with incident angle smaller than the critical angle of the substrate, TXRF signal saturation occurs very rapidly for dense films (below 0.5 nm for HfO 2 films on Si wafers using a 9.67 keV excitation at 0.5 deg.). Increasing the incident angle, the range of linear results can be extended, but on the other hand, the TXRF sensitivity is degraded because of a strong increase of the measurement dead time. On HfO 2 films grown on Si wafers, an incident angle of 0.32 deg. corresponding to a dead time of 95% was used to achieve linear analysis up to 2 nm. Composition analysis by TXRF, and especially the detection of minor elements into thin films, requires the use of a specific incident angle to optimize sensitivity. Although quantitative analyses might require specific calibration, this work shows on Co-based films that the ratio between minor elements (W, P, Mo) and Co taking into account their relative sensitivity factors is a good direct reading of the composition

  3. Persistent quantum-size effect in aluminum films up to twelve atoms thick

    International Nuclear Information System (INIS)

    Boettger, J.C.

    1996-01-01

    Total energies and work functions have been calculated for unrelaxed, free-standing Al(111) films, 1 endash 12 layers thick, using the all-electron, full-potential linear combination of Gaussian-type orbitals endash fitting-function technique. The work function exhibits a significant quantum-size effect (at least 0.1 eV) over the entire range of thickness considered. This result contradicts an old prediction that the work function of an Al(111) N-layer film will converge to within a few hundredths of an eV by N=6. The present result, which is consistent with earlier jellium calculations, demonstrates the risk of mistaking an accidental coincidence of work functions for two films, differing in thickness by one layer, for a true convergence with respect to thickness. The implications for thin-film calculations of surface properties are discussed. A linear fit to the film binding energy vs thickness is used to extract the Al(111) surface energy (0.45 eV) and the binding energy of bulk Al (4.06 eV). copyright 1996 The American Physical Society

  4. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  5. Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films

    Science.gov (United States)

    Pal, Dipayan; Singhal, Jaya; Mathur, Aakash; Singh, Ajaib; Dutta, Surjendu; Zollner, Stefan; Chattopadhyay, Sudeshna

    2017-11-01

    Atomic Layer Deposition technique was used to grow high quality, very low roughness, crystalline, Zinc Oxide (ZnO) thin films on silicon (Si) and fused quartz (SiO2) substrates to study the optical properties. Spectroscopic ellipsometry results of ZnO/Si system, staggered type-II quantum well, demonstrate that there is a significant drop in the magnitudes of both the real and imaginary parts of complex dielectric constants and in near-band gap absorption along with a blue shift of the absorption edge with decreasing film thickness at and below ∼20 nm. Conversely, UV-vis absorption spectroscopy of ZnO/SiO2, thin type-I quantum well, consisting of a narrower-band gap semiconductor grown on a wider-band gap (insulator) substrate, shows the similar thickness dependent blue-shift of the absorption edge but with an increase in the magnitude of near-band gap absorption with decreasing film thickness. Thickness dependent blue shift, energy vs. 1/d2, in two different systems, ZnO/Si and ZnO/SiO2, show a difference in their slopes. The observed phenomena can be consistently explained by the corresponding exciton (or carrier/s) deconfinement and confinement effects at the ZnO/Si and ZnO/SiO2 interface respectively, where Tanguy-Elliott amplitude pre-factor plays the key role through the electron-hole overlap factor at the interface.

  6. Analysis of Indium Tin Oxide Film Using Argon Fluroide (ArF) Laser-Excited Atomic Fluorescence of Ablated Plumes.

    Science.gov (United States)

    Ho, Sut Kam; Garcia, Dario Machado

    2017-04-01

    A two-pulse laser-excited atomic fluorescence (LEAF) technique at 193 nm wavelength was applied to the analysis of indium tin oxide (ITO) layer on polyethylene terephthalate (PET) film. Fluorescence emissions from analytes were induced from plumes generated by first laser pulse. Using this approach, non-selective LEAF can be accomplished for simultaneous multi-element analysis and it overcomes the handicap of strict requirement for laser excitation wavelength. In this study, experimental conditions including laser fluences, times for gating and time delay between pulses were optimized to reveal high sensitivity with minimal sample destruction and penetration. With weak laser fluences of 100 and 125 mJ/cm 2 for 355 and 193 nm pulses, detection limits were estimated to be 0.10% and 0.43% for Sn and In, respectively. In addition, the relation between fluorescence emissions and number of laser shots was investigated; reproducible results were obtained for Sn and In. It shows the feasibility of depth profiling by this technique. Morphologies of samples were characterized at various laser fluences and number of shots to examine the accurate penetration. Images of craters were also investigated using scanning electron microscopy (SEM). The results demonstrate the imperceptible destructiveness of film after laser shot. With such weak laser fluences and minimal destructiveness, this LEAF technique is suitable for thin-film analysis.

  7. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films.

    Science.gov (United States)

    Wang, W Y; Tang, Y L; Zhu, Y L; Suriyaprakash, J; Xu, Y B; Liu, Y; Gao, B; Cheong, S-W; Ma, X L

    2015-11-03

    Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a  . Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.

  8. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  9. Environmental Stability and Oxidation Behavior of HfO2-Si and YbGd(O) Based Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Farmer, Serene; McCue, Terry R.; Harder, Bryan; Hurst, Janet B.

    2017-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, environmental durable environmental barrier coating systems. In this paper, the durability and performance of advanced Electron Beam-Physical Vapor Deposition (EB-PVD) NASA HfO2-Si and YbGdSi(O) EBC bond coat top coat systems for SiCSiC CMC have been summarized. The high temperature thermomechanical creep, fatigue and oxidation resistance have been investigated in the laboratory simulated high-heat-flux environmental test conditions. The advanced NASA EBC systems showed promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  10. Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area.

    Science.gov (United States)

    Yoon, Jung Ho; Yoo, Sijung; Song, Seul Ji; Yoon, Kyung Jean; Kwon, Dae Eun; Kwon, Young Jae; Park, Tae Hyung; Kim, Hye Jin; Shao, Xing Long; Kim, Yumin; Hwang, Cheol Seong

    2016-07-20

    To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.

  11. Effects of Substrate and Post-Growth Treatments on the Microstructure and Properties of ZnO Thin Films Prepared by Atomic Layer Deposition

    Science.gov (United States)

    Haseman, Micah; Saadatkia, P.; Winarski, D. J.; Selim, F. A.; Leedy, K. D.; Tetlak, S.; Look, D. C.; Anwand, W.; Wagner, A.

    2016-12-01

    Aluminum-doped zinc oxide (ZnO:Al) thin films were synthesized by atomic layer deposition on silicon, quartz and sapphire substrates and characterized by x-ray diffraction (XRD), high-resolution scanning electron microscopy, optical spectroscopy, conductivity mapping, Hall effect measurements and positron annihilation spectroscopy. XRD showed that the as-grown films are of single-phase ZnO wurtzite structure and do not contain any secondary or impurity phases. The type of substrate was found to affect the orientation and degree of crystallinity of the films but had no effect on the defect structure or the transport properties of the films. High conductivity of 10-3 Ω cm, electron mobility of 20 cm2/Vs and carrier density of 1020 cm-3 were measured in most films. Thermal treatments in various atmospheres induced a large effect on the thickness, structure and electrical properties of the films. Annealing in a Zn and nitrogen environment at 400°C for 1 h led to a 16% increase in the thickness of the film; this indicates that Zn extracts oxygen atoms from the matrix and forms new layers of ZnO. On the other hand, annealing in a hydrogen atmosphere led to the emergence of an Al2O3 peak in the XRD pattern, which implies that hydrogen and Al atoms compete to occupy Zn sites in the ZnO lattice. Only ambient air annealing had an effect on film defect density and electrical properties, generating reductions in conductivity and electron mobility. Depth-resolved measurements of positron annihilation spectroscopy revealed short positron diffusion lengths and high concentrations of defects in all as-grown films. However, these defects did not diminish the electrical conductivity in the films.

  12. Correlation of damage threshold and surface geometry of nodular defects in HR coatings as determined by in-situ atomic force microscopy

    International Nuclear Information System (INIS)

    Staggs, M.C.; Kozlowski, M.R.; Siekhaus, W.J.; Balooch, M.

    1992-10-01

    Atomic force microscopy (AFM) was used to determine in-situ the correlation between the surface dimensions of defects in dielectric multilayer optical coatings and their susceptibility to damage by pulsed laser illumination. The primary surface defects studied were μm-scale domes associated with the classic nodule defect. The optical film studied was a highly reflective dielectric multilayer consisting of pairs of alternating HfO 2 and SiO 2 layers of quarter wave thickness at 1.06 μm. Nodule defect height and width dimensions were measured prior to laser illumination on two different samples. Correlation between these dimensions supported a simple model for the defect geometry. Defects with high nodule heights (> 0.6 μm) were found to be most susceptible to laser damage over a range of fluences between 0-35 J/cm 2 (1.06 μm, 10 ns, and 1/e 2 diam. of 1.3 mm). Crater defects, formed by nodules ejected from the coating prior to illumination, were also studied. None of the crater defects damaged when illuminated over the same range of fluences that the nodule defects were subjected to

  13. Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Mane, Anil U., E-mail: amane@anl.gov; Elam, Jeffrey W. [Argonne National Laboratory, Argonne, Illinois 60126 (United States); Goldberg, Alexander; Halls, Mathew D. [Schrödinger, Inc., San Diego, California 92122 (United States); Seidel, Thomas E. [Seitek50, Palm Coast, Florida 32135 (United States); Current, Michael I. [Current Scientific, San Jose, California 95124 (United States); Despres, Joseph; Byl, Oleg; Tang, Ying; Sweeney, Joseph [Entegris, Danbury, Connecticut 06810 (United States)

    2016-01-15

    Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases, the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.

  14. Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Zhiwei; Walker, Amy V., E-mail: amy.walker@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, RL10, 800 W. Campbell Rd., Richardson, Texas 75080 (United States)

    2015-09-15

    The room temperature atomic layerlike deposition (ALLD) of ZnS on functionalized self-assembled monolayers (SAMs) was investigated, using diethyl zinc (DEZ) and in situ generated H{sub 2}S as reactants. Depositions on SAMs with three different terminal groups, –CH{sub 3,} –OH, and –COOH, were studied. It was found that the reaction of DEZ with the SAM terminal group is critical in determining the film growth rate. Little or no deposition is observed on –CH{sub 3} terminated SAMs because DEZ does not react with the methyl terminal group. ZnS does deposit on both –OH and –COOH terminated SAMs, but the grow rate on –COOH terminated SAMs is ∼10% lower per cycle than on –OH terminated SAMs. DEZ reacts with the hydroxyl group on –OH terminated SAMs, while on –COOH terminated SAMs it reacts with both the hydroxyl and carbonyl bonds of the terminal groups. The carbonyl reaction is found to lead to the formation of ketones rather than deposition of ZnS, lowering the growth rate on –COOH terminated SAMs. SIMS spectra show that both –OH and –COOH terminated SAMs are covered by the deposited ZnS layer after five ALLD cycles. In contrast to ZnO ALLD where the composition of the film differs for the first few layers on –COOH and –OH terminated SAMs, the deposited film composition is the same for both –COOH and –OH terminated SAMs. The deposited film is found to be Zn-rich, suggesting that the reaction of H{sub 2}S with the Zn-surface adduct may be incomplete.

  15. Spontaneous nano-clustering of ZrO2 in atomic layer deposited LayZr1-yOx thin films: Part 1 - Material characterization

    NARCIS (Netherlands)

    Klootwijk, J.H.; Jinesh, K.B.; Wolters, R.A.M.; Roozeboom, F.; Besling, W.

    2008-01-01

    During atomic layer deposition (ALD) of uniform LayZr1-yOx thin films, spontaneous segregation of ZrO2 nanocrystals takes place that are embedded in an amorphous La2O3 matrix. This occurs if the Zr content in the LayZr1-yOx film is above 30% i.e. if the pulse ratio between the lanthanum precursor

  16. Influence of ion-to-atom ratio on the microstructure of evaporated molybdenum thin films grown using low energy argon ions

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Praveen Kumar, E-mail: praveenyadav@rrcat.gov.in; Nayak, Maheswar; Rai, Sanjay Kumar; Lodha, Gyanendra Singh [X-ray Optics Section, Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Sant, Tushar; Sharma, Surinder Mohan [High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mukherjee, Chandrachur [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2014-03-15

    The authors report the effect of argon ion to molybdenum atom ratio (r) on the microstructure of low energy (70 eV) argon ion assisted electron beam evaporated Mo thin films. Surface roughness, morphology, and crystallinity of Mo films are found to strongly depend on “r.” Increase of “r” from 0 to 100 induces gradual loss in crystallinity, reduction in surface roughness and systematic increase in density of the film. For “r” ∼ 100, average atomic density of the film approaches the bulk value (97%) with lowest surface roughness. Further, increasing “r” up to 170 reduces the atomic density, increases roughness, and increase in crystallinity induced by low energy Ar ion beam. The observed surface roughness and grain size determined by x-ray reflectivity and glancing incidence x-ray diffraction correlate well with atomic force microscopy measurements. This study demonstrates that for r = 100 one gets lowest roughness Mo film with highest density and nearly amorphous microstructure. The growth model is discussed by structural zone model.

  17. Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

    Science.gov (United States)

    Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

    2014-04-22

    Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

  18. Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

    Science.gov (United States)

    Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

    2017-07-01

    Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

  19. Hydrophilization of Poly(ether ether ketone) Films by Surface-initiated Atom Transfer Radical Polymerization

    DEFF Research Database (Denmark)

    Fristrup, Charlotte Juel; Eskimergen, Rüya; Burkrinsky, J.T.

    2008-01-01

    and confirmed by ATR FTIR, water contact ang;le, and Thermal Gravimetric Analysis (TGA). The surface topography was evaluated by "Atomic Force Microscopy (AFM). X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the degree of functionalization. The performed modification allowed for successful...

  20. Organic thin film transistors with polymer brush gate dielectrics synthesized by atom transfer radical polymerization

    DEFF Research Database (Denmark)

    Pinto, J.C.; Whiting, G.L.; Khodabakhsh, S.

    2008-01-01

    , synthesized by atom transfer radical polymerization (ATRP), were used to fabricate low voltage OFETs with both evaporated pentacene and solution deposited poly(3-hexylthiophene). The semiconductor-dielectric interfaces in these systems were studied with a variety of methods including scanning force microscopy...

  1. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Science.gov (United States)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  2. Origin of phase shift in atomic force microscopic investigation of the surface morphology of NR/NBR blend film

    Energy Technology Data Exchange (ETDEWEB)

    Thanawan, S. [Institute of Science and Technology for Research and Development, Mahidol University, Salaya, Nakhon Pathom 73170 (Thailand)], E-mail: ststw@mahidol.ac.th; Radabutra, S.; Thamasirianunt, P.; Amornsakchai, T.; Suchiva, K. [Department of Chemistry, Faculty of Science, Mahidol University, Salaya, Nakhon Pathom 73170 (Thailand)

    2009-01-15

    Atomic force microscopy (AFM) was used to study the morphology and surface properties of NR/NBR blend. Blends at 1/3, 1/1 and 3/1 weight ratios were prepared in benzene and formed film by casting. AFM phase images of these blends in tapping mode displayed islands in the sea morphology or matrix-dispersed structures. For blend 1/3, NR formed dispersed phase while in blends 1/1 and 3/1 phase inversion was observed. NR showed higher phase shift angle in AFM phase imaging for all blends. This circumstance was governed by adhesion energy hysteresis between the device tip and the rubber surface rather than surface stiffness of the materials, as proved by force distance measurements in the AFM contact mode.

  3. Origin of phase shift in atomic force microscopic investigation of the surface morphology of NR/NBR blend film.

    Science.gov (United States)

    Thanawan, S; Radabutra, S; Thamasirianunt, P; Amornsakchai, T; Suchiva, K

    2009-01-01

    Atomic force microscopy (AFM) was used to study the morphology and surface properties of NR/NBR blend. Blends at 1/3, 1/1 and 3/1 weight ratios were prepared in benzene and formed film by casting. AFM phase images of these blends in tapping mode displayed islands in the sea morphology or matrix-dispersed structures. For blend 1/3, NR formed dispersed phase while in blends 1/1 and 3/1 phase inversion was observed. NR showed higher phase shift angle in AFM phase imaging for all blends. This circumstance was governed by adhesion energy hysteresis between the device tip and the rubber surface rather than surface stiffness of the materials, as proved by force distance measurements in the AFM contact mode.

  4. Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

    Science.gov (United States)

    Chen, Li; Chen, Xinliang; Zhou, Zhongxin; Guo, Sheng; Zhao, Ying; Zhang, Xiaodan

    2018-03-01

    Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 °C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10‑3 Ω·cm and high optical transmittance deposited at 150 °C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707) and the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900).

  5. Integration of atomic layer deposition CeO2 thin films with functional complex oxides and 3D patterns

    International Nuclear Information System (INIS)

    Coll, M.; Palau, A.; Gonzalez-Rosillo, J.C.; Gazquez, J.; Obradors, X.; Puig, T.

    2014-01-01

    We present a low-temperature, < 300 °C, ex-situ integration of atomic layer deposition (ALD) ultrathin CeO 2 layers (3 to 5 unit cells) with chemical solution deposited La 0.7 Sr 0.3 MnO 3 (LSMO) functional complex oxides for multilayer growth without jeopardizing the morphology, microstructure and physical properties of the functional oxide layer. We have also extended this procedure to pulsed laser deposited YBa 2 Cu 3 O 7 (YBCO) thin films. Scanning force microscopy, X-ray diffraction, aberration corrected scanning transmission electron microscopy and macroscopic magnetic measurements were used to evaluate the quality of the perovskite films before and after the ALD process. By means of microcontact printing and ALD we have prepared CeO 2 patterns using an ozone-robust photoresist that will avoid the use of hazardous lithography processes directly on the device components. These bilayers, CeO 2 /LSMO and CeO 2 /YBCO, are foreseen to have special interest for resistive switching phenomena in resistive random-access memory. - Highlights: • Integration of atomic layer deposition (ALD) CeO 2 layers on functional complex oxides • Resistive switching is identified in CeO 2 /La 0.7 Sr 0.3 MnO 3 and CeO 2 /YBa 2 Cu 3 O 7 bilayers. • Study of the robustness of organic polymers for area-selective ALD • Combination of ALD and micro-contact printing to obtain 3D patterns of CeO 2

  6. Growth of centimeter-scale atomically thin MoS{sub 2} films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, Gene; Venkata Subbaiah, Y. P.; Prestgard, Megan C.; Tiwari, Ashutosh, E-mail: tiwari@eng.utah.edu [Nanostructured Materials Research Laboratory, Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-05-01

    We are reporting the growth of single layer and few-layer MoS{sub 2} films on single crystal sapphire substrates using a pulsed-laser deposition technique. A pulsed KrF excimer laser (wavelength: 248 nm; pulse width: 25 ns) was used to ablate a polycrystalline MoS{sub 2} target. The material thus ablated was deposited on a single crystal sapphire (0001) substrate kept at 700 °C in an ambient vacuum of 10{sup −6} Torr. Detailed characterization of the films was performed using atomic force microscopy (AFM), Raman spectroscopy, UV-Vis spectroscopy, and photoluminescence (PL) measurements. The ablation of the MoS{sub 2} target by 50 laser pulses (energy density: 1.5 J/cm{sup 2}) was found to result in the formation of a monolayer of MoS{sub 2} as shown by AFM results. In the Raman spectrum, A{sub 1g} and E{sup 1}{sub 2g} peaks were observed at 404.6 cm{sup −1} and 384.5 cm{sup −1} with a spacing of 20.1 cm{sup −1}, confirming the monolayer thickness of the film. The UV-Vis absorption spectrum exhibited two exciton absorption bands at 672 nm (1.85 eV) and 615 nm (2.02 eV), with an energy split of 0.17 eV, which is in excellent agreement with the theoretically predicted value of 0.15 eV. The monolayer MoS{sub 2} exhibited a PL peak at 1.85 eV confirming the direct nature of the band-gap. By varying the number of laser pulses, bi-layer, tri-layer, and few-layer MoS{sub 2} films were prepared. It was found that as the number of monolayers (n) in the MoS{sub 2} films increases, the spacing between the A{sub 1g} and E{sup 1}{sub 2g} Raman peaks (Δf) increases following an empirical relation, Δf=26.45−(15.42)/(1+1.44 n{sup 0.9}) cm{sup −1}.

  7. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C......10 layers with a thickness of 4 nm, 13 nm and 22 nm, respectively, grown on Mg(100), were studied by atomic force microscopy and X-ray reflectometry....

  8. Sensor-based atomic layer deposition for rapid process learning and enhanced manufacturability

    Science.gov (United States)

    Lei, Wei

    In the search for sensor based atomic layer deposition (ALD) process to accelerate process learning and enhance manufacturability, we have explored new reactor designs and applied in-situ process sensing to W and HfO 2 ALD processes. A novel wafer scale ALD reactor, which features fast gas switching, good process sensing compatibility and significant similarity to the real manufacturing environment, is constructed. The reactor has a unique movable reactor cap design that allows two possible operation modes: (1) steady-state flow with alternating gas species; or (2) fill-and-pump-out cycling of each gas, accelerating the pump-out by lifting the cap to employ the large chamber volume as ballast. Downstream quadrupole mass spectrometry (QMS) sampling is applied for in-situ process sensing of tungsten ALD process. The QMS reveals essential surface reaction dynamics through real-time signals associated with byproduct generation as well as precursor introduction and depletion for each ALD half cycle, which are then used for process learning and optimization. More subtle interactions such as imperfect surface saturation and reactant dose interaction are also directly observed by QMS, indicating that ALD process is more complicated than the suggested layer-by-layer growth. By integrating in real-time the byproduct QMS signals over each exposure and plotting it against process cycle number, the deposition kinetics on the wafer is directly measured. For continuous ALD runs, the total integrated byproduct QMS signal in each ALD run is also linear to ALD film thickness, and therefore can be used for ALD film thickness metrology. The in-situ process sensing is also applied to HfO2 ALD process that is carried out in a furnace type ALD reactor. Precursor dose end-point control is applied to precisely control the precursor dose in each half cycle. Multiple process sensors, including quartz crystal microbalance (QCM) and QMS are used to provide real time process information. The

  9. Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

    Science.gov (United States)

    Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

    2016-04-13

    Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

  10. Antifouling coatings via plasma polymerization and atom transfer radical polymerization on thin film composite membranes for reverse osmosis

    Science.gov (United States)

    Hirsch, Ulrike; Ruehl, Marco; Teuscher, Nico; Heilmann, Andreas

    2018-04-01

    A major drawback to otherwise highly efficient membrane-based desalination techniques like reverse osmosis (RO) is the susceptibility of the membranes to biofouling. In this work, a combination of plasma activation, plasma bromination and surface-initiated atom transfer radical polymerization (si-ATRP) of hydrophilic and zwitterionic monomers, namely hydroxyethyl methacrylate (HEMA), 2-methacryloyloxyethyl phosphorylcholine (MPC) and [2-(methacryloyloxy)ethyl]-dimethyl-(3-sulfopropyl)ammonium hydroxide (SBMA), was applied to generate non-specific, anti-adhesive coatings on thin film composite (TFC) membranes. The antifouling effect of the coatings was shown by short-time batch as well as long-time steady state cultivation experiments with the microorganism Pseudomonas fluorescens. It could be shown that plasma functionalization and polymerization is possible on delicate thin film composite membranes without restricting their filtration performance. All modified membranes showed an increased resistance towards the adhesion of Pseudomonas fluorescens. On average, the biofilm coverage was reduced by 51.4-12.6% (for HEMA, SBMA, and MPC), the highest reduction was monitored for MPC with a biofilm reduction by 85.4%. The hydrophilic coatings applied did not only suppress the adhesion of Pseudomonas fluorescens, but also significantly increase the permeate flux of the membranes relative to uncoated membranes. The stability of the coatings was however not ideal and will have to be improved for future commercial use.

  11. Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

    Science.gov (United States)

    Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2018-05-01

    The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

  12. Low-temperature ({<=}200 Degree-Sign C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Samal, Nigamananda; Du Hui; Luberoff, Russell; Chetry, Krishna; Bubber, Randhir; Hayes, Alan; Devasahayam, Adrian [Veeco Instruments, 1 Terminal Drive, Plainview, New York 11803 (United States)

    2013-01-15

    Titanium nitride (TiN) has been widely used in the semiconductor industry for its diffusion barrier and seed layer properties. However, it has seen limited adoption in other industries in which low temperature (<200 Degree-Sign C) deposition is a requirement. Examples of applications which require low temperature deposition are seed layers for magnetic materials in the data storage (DS) industry and seed and diffusion barrier layers for through-silicon-vias (TSV) in the MEMS industry. This paper describes a low temperature TiN process with appropriate electrical, chemical, and structural properties based on plasma enhanced atomic layer deposition method that is suitable for the DS and MEMS industries. It uses tetrakis-(dimethylamino)-titanium as an organometallic precursor and hydrogen (H{sub 2}) as co-reactant. This process was developed in a Veeco NEXUS Trade-Mark-Sign chemical vapor deposition tool. The tool uses a substrate rf-biased configuration with a grounded gas shower head. In this paper, the complimentary and self-limiting character of this process is demonstrated. The effects of key processing parameters including temperature, pulse time, and plasma power are investigated in terms of growth rate, stress, crystal morphology, chemical, electrical, and optical properties. Stoichiometric thin films with growth rates of 0.4-0.5 A/cycle were achieved. Low electrical resistivity (<300 {mu}{Omega} cm), high mass density (>4 g/cm{sup 3}), low stress (<250 MPa), and >85% step coverage for aspect ratio of 10:1 were realized. Wet chemical etch data show robust chemical stability of the film. The properties of the film have been optimized to satisfy industrial viability as a Ruthenium (Ru) preseed liner in potential data storage and TSV applications.

  13. Surface Passivation Mechanism of Atomic Layer Deposited Al2O3 Films on c-Si Studied by Optical Second-Harmonic Generation

    NARCIS (Netherlands)

    Gielis, J.J.H.; Verlaan, V.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.; Terlinden, N.M.

    2009-01-01

    Recently, it was shown that Al2O3 thin films synthesized by (plasmaassisted) atomic layer deposition (ALD) provide excellent surface passivation of n, p and p+ type c-Si as highly relevant for c-Si photovoltaics. It was found that a large negative fixed charge density (up to 1013 cm-2) in the Al2O3

  14. Complementary Characterization of Cu(In,Ga)Se₂ Thin-Film Photovoltaic Cells Using Secondary Ion Mass Spectrometry, Auger Electron Spectroscopy, and Atom Probe Tomography.

    Science.gov (United States)

    Jang, Yun Jung; Lee, Jihye; Jeong, Jeung-Hyun; Lee, Kang-Bong; Kim, Donghwan; Lee, Yeonhee

    2018-05-01

    To enhance the conversion performance of solar cells, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is required. In this study, we determined the average concentration of the major elements (Cu, In, Ga, and Se) in fabricated Cu(In,Ga)Se2 (CIGS) thin films, using inductively coupled plasma atomic emission spectroscopy, X-ray fluorescence, and wavelengthdispersive electron probe microanalysis. Depth profiling results for CIGS thin films with different cell efficiencies were obtained using secondary ion mass spectrometry and Auger electron spectroscopy to compare the atomic concentrations. Atom probe tomography, a characterization technique with sub-nanometer resolution, was used to obtain three-dimensional elemental mapping and the compositional distribution at the grain boundaries (GBs). GBs are identified by Na increment accompanied by Cu depletion and In enrichment. Segregation of Na atoms along the GB had a beneficial effect on cell performance. Comparative analyses of different CIGS absorber layers using various analytical techniques provide us with understanding of the compositional distributions and structures of high efficiency CIGS thin films in solar cells.

  15. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

    Science.gov (United States)

    Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

    2017-12-01

    X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

  16. Atomically flat surface of (0 0 1) textured FePt thin films by residual stress control

    Energy Technology Data Exchange (ETDEWEB)

    Liu, S.H. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Hsiao, S.N., E-mail: pmami.hsiao@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chou, C.L.; Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan (China); Lee, H.Y. [National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China); Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan (China)

    2015-11-01

    Highlights: • We demonstrate crystallographic structure, (0 0 1) texture, surface roughness, and residual stress in the single-layered FePt thin films annealed at various heating rates (10–110 K/s). • Texture coefficient of (0 0 1)-plane of the samples increases with increasing heating rate from 10 to 40 K/s, which is correlated with perpendicular magnetic anisotropy and in-plane tensile stress. • Dewetting phenomenon due to stress relaxation leads to the broadening of [0 0 1] easy axis and degradation of perpendicular magnetic anisotropy. • A strong dependence of surface roughness on in-plane residual stress was revealed. • When the samples are RTA at 40 K/s, the enhanced perpendicular magnetic anisotropy and atomically surface roughness are achieved. - Abstract: Single-layered Fe{sub 52}Pt{sub 48} films with thickness of 10 nm were sputter-deposited on glass substrates. Rapid thermal annealing with different heating rates (10–110 K/s) was applied to transform as-deposited fcc phase into L1{sub 0} phase and meanwhile to align [0 0 1]-axis of L1{sub 0} crystal along plane normal direction. Based on X-ray diffractometry using synchrotron radiation source, the texture coefficient of (0 0 1)-plane increases with increasing heating rate from 10 to 40 K/s, which is correlated with perpendicular magnetic anisotropy and in-plane tensile stress analyzed by asymmetric sin{sup 2} ψ method. Furthermore, it was revealed by atomic force microscopy that the dewetting process occurred as heating rate was raised up to 80 K/s and higher. The change in the microstructure due to stress relaxation leads to the degradation of (0 0 1) orientation and magnetic properties. Surface roughness is closely related to the in-plane tensile stress. Enhanced perpendicular magnetic anisotropy and atomically flat surface were achieved for the samples annealed at 40 K/s, which may be suitable for further practical applications. This work also suggests a feasible way for surface

  17. Hydrophilization of poly(ether ether ketone) films by surface-initiated atom transfer radical polymerization

    DEFF Research Database (Denmark)

    Fristrup, Charlotte Juel; Jankova Atanasova, Katja; Hvilsted, Søren

    2010-01-01

    Surface-Initiated Atom Transfer Radical Polymerization (SI-ATRP) has been exploited to hydrophilize PEEK. The ketone groups on the PEEK surface were reduced to hydroxyl groups which were converted to bromoisobutyrate initiating sites for SI-ATRP. The modification steps were followed by contact...... angle measurements and XPS. Moreover, ATR FTIR has been used to confirm the formation of initiating groups. Grafting of PEGMA from PEEK was performed in aqueous solution. The presence of the PPEGMA grafts on PEEK was revealed by the thermograms from TGA whereas investigations with AFM rejected changes...

  18. The application of neutron reflectometry and atomic force microscopy in the study of corrosion inhibitor films

    International Nuclear Information System (INIS)

    John, Douglas; Blom, Annabelle; Bailey, Stuart; Nelson, Andrew; Schulz, Jamie; De Marco, Roland; Kinsella, Brian

    2006-01-01

    Corrosion inhibitor molecules function by adsorbing to a steel surface and thus prevent oxidation of the metal. The interfacial structures formed by a range of corrosion inhibitor molecules have been investigated by in situ measurements based on atomic force microscopy and neutron reflectometry. Inhibitors investigated include molecules cetyl pyridinium chloride (CPC), dodecyl pyridinium chloride (DPC), 1-hydroxyethyl-2-oleic imidazoline (OHEI) and cetyl dimethyl benzyl ammonium chloride (CDMBAC). This has shown that the inhibitor molecules adsorb onto a surface in micellar structures. Corrosion measurements confirmed that maximum inhibition efficiency coincides with the solution critical micelle concentration

  19. The annealing effect on work function variation of WN{sub x}C{sub y} films deposited by remote plasma atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyunjung; Shin, Changhee; Lim, Heewoo; Kim, Manseok [Department of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul (Korea, Republic of); Jang, Woochool; Lee, Kunyoung [Division of Materials Science and Engineering, Hanyang University, Seoul (Korea, Republic of); Yuh, Junhan [Division of Steel Solution, POSCO, Seoul (Korea, Republic of); Jeon, Hyeongtag [Department of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul (Korea, Republic of); Division of Materials Science and Engineering, Hanyang University, Seoul (Korea, Republic of)

    2017-07-15

    Tungsten-nitrogen-carbide (WN{sub x}C{sub y}) thin films were investigated as the metal gate of complementary metal-oxide-semiconductor (CMOS) devices. WN{sub x}C{sub y} thin films were deposited by employing the remote plasma atomic layer deposition (RPALD) using a bis(tert-butylimido) bis (dimethylamido) tungsten (BTBMW) precursor and hydrogen plasma as a reactant. The growth rate of the WN{sub x}C{sub y} films was about 0.12 nm/cycle. X-ray diffraction (XRD) analysis indicated that the films consisted of a mixture of tungsten carbide and tungsten nitride phases. The atomic force microscope (AFM) analysis further confirmed that the WN{sub x}C{sub y} film surfaces deposited by RPALD were smooth. In addition, the chemical bonding state analysis showed that the WN{sub x}C{sub y} films consisted of WN, WC, and WO phases. To measure the work function of the WN{sub x}C{sub y} film, a MOSCAP (metal oxide semiconductor capacitor) stack was fabricated and the flat band voltage was measured by current-voltage (C-V) measurements. A WN{sub x}C{sub y} work function value of 4.91 eV was suitable for p-MOS and the work function of the WN{sub x}C{sub y} films varied depending on the annealing treatment, and was higher than the work function of the as-deposited WN{sub x}C{sub y} film. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Effects of annealing on the properties of atomic layer deposited Ru thin films deposited by NH{sub 3} and H{sub 2} as reactants

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Joon; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr

    2016-08-01

    Atomic layer deposition (ALD) of Ru using a non-oxidizing reactant is indispensable considering its application as a seed layer for Cu electroplating and a bottom electrode for dynamic random access memory capacitors. In this study, ALD-Ru films were deposited using a sequential supply of dicarbonyl-bis(5-methyl-2,4-hexanediketonato) Ru(II) (C{sub 16}H{sub 22}O{sub 6}Ru) and potential non-oxidizing reducing agents, NH{sub 3} or H{sub 2}, as the reactants at a substrate temperature of 250 °C, and the effects of post-annealing in a H{sub 2} ambient on the film properties were investigated. The highly conformal deposition of Ru films was possible using the present reaction scheme but its resistivity was as high as ~ 750 μΩ-cm due to carbon incorporation into the film and the formation of an amorphous structure. Low temperature annealing at 300 °C at H{sub 2} ambient after deposition was found to improve the properties significantly in terms of the resistivity, impurities contents and crystallinity. For example, the film resistivity was decreased drastically to ~ 40 μΩ-cm with both the release of C in the film and crystallization after annealing based on secondary ion mass spectrometry and transmission electron microscopy, whereas perfect step coverage at a very small-sized dual trench (aspect ratio: ~ 3, the top opening size of 45 nm and bottom size of 20 nm) was maintained after annealing. - Highlights: • Ru thin films were deposited by atomic layer deposition (ALD) using NH{sub 3} and H{sub 2} molecules. • Effects of low temperature (300 °C) post-annealing on the film properties were investigated. • Post annealing improved the properties of ALD-Ru films. • Perfect step coverage of ALD-Ru was confirmed at trench structure (top opening width: 45 nm).

  1. Study of porogen removal by atomic hydrogen generated by hot wire chemical vapor deposition for the fabrication of advanced low-k thin films

    Energy Technology Data Exchange (ETDEWEB)

    Godavarthi, S., E-mail: srinivas@cinvestav.mx [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Fisicas, Av. Universidad, Cuernavaca, Morelos (Mexico); Wang, C.; Verdonck, P. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Matsumoto, Y.; Koudriavtsev, I. [Program of Nanoscience and Nanotechnology, Cinvestav-IPN (Mexico); SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Dutt, A. [SEES, Electrical Engineering Department, Cinvestav-IPN (Mexico); Tielens, H.; Baklanov, M.R. [imec, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-30

    In order to obtain low-k dielectric films, a subtractive technique, which removes sacrificial porogens from a hydrogenated silicon oxycarbide (SiOC:H) film, has been used successfully by different groups in the past. In this paper, we report on the porogen removal from porogenated SiOC:H films, using a hot wire chemical vapor deposition (HWCVD) equipment. Molecular hydrogen is dissociated into atomic hydrogen by the hot wires and these atoms may successfully remove the hydrocarbon groups from the porogenated SiOC:H films. The temperature of the HWCVD filaments proved to be a determining factor. By Fourier transform infrared spectroscopy, X-ray reflectivity (XRR), secondary ion mass spectrometry (SIMS), ellipsometric porosimetry and capacitance-voltage analyses, it was possible to determine that for temperatures higher than 1700 °C, efficient porogen removal occurred. For temperatures higher than 1800 °C, the presence of OH groups was detected. The dielectric constant was the lowest, 2.28, for the samples processed at a filament temperature of 1800 °C, although porosity measurements showed higher porosity for the films deposited at the higher temperatures. XRR and SIMS analyses indicated densification and Tungsten (W) incorporation at the top few nanometers of the films.

  2. ATOMIC LAYER DEPOSITION OF TITANIUM OXIDE THIN FILMS ONNANOPOROUS ALUMINA TEMPLATES FOR MEDICAL APPLICATIONS

    Energy Technology Data Exchange (ETDEWEB)

    Brigmon, R.

    2009-05-05

    Nanostructured materials may play a significant role in controlled release of pharmacologic agents for treatment of cancer. Many nanoporous polymer materials are inadequate for use in drug delivery. Nanoporous alumina provides several advantages over other materials for use in controlled drug delivery and other medical applications. Atomic layer deposition was used to coat all the surfaces of the nanoporous alumina membrane in order to reduce the pore size in a controlled manner. Both the 20 nm and 100 nm titanium oxide-coated nanoporous alumina membranes did not exhibit statistically lower viability compared to the uncoated nanoporous alumina membrane control materials. In addition, 20 nm pore size titanium oxide-coated nanoporous alumina membranes exposed to ultraviolet light demonstrated activity against Escherichia coli and Staphylococcus aureus bacteria. Nanostructured materials prepared using atomic layer deposition may be useful for delivering a pharmacologic agent at a precise rate to a specific location in the body. These materials may serve as the basis for 'smart' drug delivery devices, orthopedic implants, or self-sterilizing medical devices.

  3. Standard Test Method for Hydrophobic Surface Films by the Atomizer Test

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1965-01-01

    1.1 This test method covers the detection of the presence of hydrophobic (nonwetting) films on surfaces and the presence of hydrophobic organic materials in processing ambients. When properly conducted, the test will enable detection of fractional molecular layers of hydrophobic organic contaminants. On very rough or porous surfaces the sensitivity of the test may be significantly decreased. 1.2 The values stated in inch-pound units are to be regarded as the standard. The values given in parentheses are for information only. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  4. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO{sub 2} thin films grown by atomic layer deposition at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: babaisps@rrcat.gov.in [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Ajimsha, R.S. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Rajiv, K.; Mukherjee, C. [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Gupta, M. [UGC-DAE Consortium, Indore Centre, Khandwa Road, Indore 452017 (India); Misra, P.; Kukreja, L.M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2014-10-01

    Highlights: • Refractive index was found to be increased from amorphous to the nanocrystalline films. • Refractive index was found to be inversely proportional with growth per cycle. • Large-grained anatase films showed lower refractive indices than the amorphous films. • Roughness was taken into consideration due to the columnar growths of crystalline films. - Abstract: TiO{sub 2} thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (T{sub s}) in a wide range (50 °C ≤ T{sub s} ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (T{sub s} ≤ 150 °C) to the nanocrystalline films (250{sup 0} < T{sub s} ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple–DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  5. Atomic Layer Deposition of Electron Selective SnOx and ZnO Films on Mixed Halide Perovskite: Compatibility and Performance.

    Science.gov (United States)

    Hultqvist, Adam; Aitola, Kerttu; Sveinbjörnsson, Kári; Saki, Zahra; Larsson, Fredrik; Törndahl, Tobias; Johansson, Erik; Boschloo, Gerrit; Edoff, Marika

    2017-09-06

    The compatibility of atomic layer deposition directly onto the mixed halide perovskite formamidinium lead iodide:methylammonium lead bromide (CH(NH 2 ) 2 , CH 3 NH 3 )Pb(I,Br) 3 (FAPbI 3 :MAPbBr 3 ) perovskite films is investigated by exposing the perovskite films to the full or partial atomic layer deposition processes for the electron selective layer candidates ZnO and SnO x . Exposing the samples to the heat, the vacuum, and even the counter reactant of H 2 O of the atomic layer deposition processes does not appear to alter the perovskite films in terms of crystallinity, but the choice of metal precursor is found to be critical. The Zn precursor Zn(C 2 H 5 ) 2 either by itself or in combination with H 2 O during the ZnO atomic layer deposition (ALD) process is found to enhance the decomposition of the bulk of the perovskite film into PbI 2 without even forming ZnO. In contrast, the Sn precursor Sn(N(CH 3 ) 2 ) 4 does not seem to degrade the bulk of the perovskite film, and conformal SnO x films can successfully be grown on top of it using atomic layer deposition. Using this SnO x film as the electron selective layer in inverted perovskite solar cells results in a lower power conversion efficiency of 3.4% than the 8.4% for the reference devices using phenyl-C 70 -butyric acid methyl ester. However, the devices with SnO x show strong hysteresis and can be pushed to an efficiency of 7.8% after biasing treatments. Still, these cells lacks both open circuit voltage and fill factor compared to the references, especially when thicker SnO x films are used. Upon further investigation, a possible cause of these losses could be that the perovskite/SnO x interface is not ideal and more specifically found to be rich in Sn, O, and halides, which is probably a result of the nucleation during the SnO x growth and which might introduce barriers or alter the band alignment for the transport of charge carriers.

  6. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Massimo Tallarida

    2014-01-01

    Full Text Available We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  7. Dynamic Atomic Reconstruction: How Fe_{3}O_{4} Thin Films Evade Polar Catastrophe for Epitaxy

    Directory of Open Access Journals (Sweden)

    C. F. Chang

    2016-10-01

    Full Text Available Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of such advanced interfaces will become a powerful route to engineer devices with novel functionalities. Here, we investigate the initial stages of growth and the electronic structure of the spintronic Fe_{3}O_{4}/MgO(001 interface. Using soft x-ray absorption spectroscopy, we have discovered that the so-called A-sites are completely missing in the first Fe_{3}O_{4} monolayer. This discovery allows us to develop an unexpected but elegant growth principle in which, during deposition, the Fe atoms are constantly on the move to solve the divergent electrostatic potential problem, thereby ensuring epitaxy and stoichiometry at the same time. This growth principle provides a new perspective for the design of interfaces.

  8. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

    2011-01-01

    Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  9. Atomic control of substrate termination and heteroepitaxial growth of SrTiO sub 3 /LaAlO sub 3 films

    CERN Document Server

    Kim, D W; Choi, C; Lim, K D; Noh, T W; Lee, D R; Park, J H; Lee, K B

    2000-01-01

    The roles of substrate termination in the growth behaviors of SrTiO sub 3 (STO) films were investigated. With heat treatment and an atomic layer deposition technique, LaAlO sub 3 (LAO) substrates with two kinds of terminations, i.e., LaO- and AlO sub 2 -terminated ones, could be prepared. On top of them STO films were grown by using laser molecular beam epitaxy. In the case of the STO/LaO-LAO film, a transition from layer-by-layer growth to island growth was observed after growth of about 10 monolayers (ML). On the other hand, the STO/AlO sub 2 -LAO film could be grown in a layer-by-layer mode with a flat surface up to 40 ML. We suggest that defects induced by charge compensation influence the strain states and the physical properties of oxide heterostructures significantly.

  10. Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

    International Nuclear Information System (INIS)

    Tian, Liang; Soum-Glaude, Adurey; Volpi, Fabien; Salvo, Luc; Berthomé, Grégory; Coindeau, Stéphane; Mantoux, Arnaud; Boichot, Raphaël; Lay, Sabine; Brizé, Virginie; Blanquet, Elisabeth; Giusti, Gaël; Bellet, Daniel

    2015-01-01

    Undoped and nitrogen doped TiO 2 thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 °C and nitrogen incorporation was achieved by using titanium isopropoxide, NH 3 and/or N 2 O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Ω cm (+/−10 Ω cm) combined with an average total transmittance of 60% in the 400–1000 nm wavelength range. Eventually, TiO 2 thin films were deposited on the 3D metallic foam template

  11. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

    2011-09-15

    Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  12. Highly transparent and thermal-stable silver nanowire conductive film covered with ZnMgO by atomic-layer-deposition

    Science.gov (United States)

    Wang, Lei; Huang, Dongchen; Li, Min; Xu, Hua; Zou, Jianhua; Tao, Hong; Peng, Junbiao; Xu, Miao

    2017-12-01

    Solution-processed silver nanowires (AgNWs) have been considered as a promising material for next generation flexible transparent conductive electrodes. However AgNWs films have several intrinsic drawbacks, such as thermal stability and storage stability. Herein, we demonstrate a laminated ZnO/MgO (ZnMgO, ZMO) as a protective layer on the AgNWs films using atomic layer deposition (ALD). The fabricated films exhibited a low sheet resistance of 16 Ω/sq with high transmittance of 91% at 550 nm, an excellent thermal stability and bending property. The ZMO film grows perpendicularly on the surface of the AgNWs, making a perfect coverage of bulk silver nanowires and junction, which can effectively prompt the electrical transport behavior and enhance stability of the silver nanowires network.

  13. Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kilpi, Lauri, E-mail: Lauri.Kilpi@vtt.fi; Ylivaara, Oili M. E.; Vaajoki, Antti; Puurunen, Riikka L.; Ronkainen, Helena [VTT Technical Research Centre of Finland Ltd., P.O. Box 1000, FI-02044 VTT (Finland); Malm, Jari [Department of Physics, University of Jyväskylä, P.O. Box 35, Jyväskylä 40014 (Finland); Sintonen, Sakari [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 AALTO (Finland); Tuominen, Marko [ASM Microchemistry Oy, Pietari Kalmin katu 1 F 2, FIN-00560 Helsinki (Finland)

    2016-01-15

    The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as L{sub CSi1}, L{sub CSi2}, L{sub CALD1}, and L{sub CALD2}, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al{sub 2}O{sub 3}, TiO{sub 2}, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and deposition temperature between 30 and 410 °C on silicon wafers was investigated. In addition, the impact of the annealing process after deposition on adhesion was evaluated for selected cases. The tests carried out using scratch and Scotch tape test showed that the coating deposition and annealing temperature, thickness of the coating, and surface pretreatments of the Si wafer had an impact on the adhesion performance of the ALD coatings on the silicon wafer. There was also an improved load carrying capacity due to Al{sub 2}O{sub 3}, the magnitude of which depended on the coating thickness and the deposition temperature. The tape tests were carried out for selected coatings as a comparison. The results show that the scratch test is a useful and applicable tool for adhesion evaluation of ALD coatings, even when carried out for thin (20 nm thick) coatings.

  14. Electrochemical, atomic force microscopy and infrared reflection absorption spectroscopy studies of pre-formed mussel adhesive protein films on carbon steel for corrosion protection

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fan, E-mail: fanzhang@kth.se [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Chemistry, Div. of Surface and Corrosion Science, Drottning Kristinas vaeg.51, SE-100 44 Stockholm (Sweden); Pan, Jinshan [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Chemistry, Div. of Surface and Corrosion Science, Drottning Kristinas vaeg.51, SE-100 44 Stockholm (Sweden); Claesson, Per Martin [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Chemistry, Div. of Surface and Corrosion Science, Drottning Kristinas vaeg.51, SE-100 44 Stockholm (Sweden); Institute for Surface Chemistry, P.O. Box 5607, SE-114 86 Stockholm (Sweden); Brinck, Tore [KTH Royal Institute of Technology, School of Chemical Science and Engineering, Department of Physical Chemistry, Division of Physical Chemistry, Teknikringen 36, SE-10044 Stockholm (Sweden)

    2012-10-01

    Electrochemical measurements, in situ and ex situ atomic force microscopy (AFM) experiments and infrared reflection absorption spectroscopy (IRAS) analysis were performed to investigate the formation and stability as well as corrosion protection properties of mussel adhesive protein (Mefp-1) films on carbon steel, and the influence of cross-linking by NaIO{sub 4} oxidation. The in situ AFM measurements show flake-like adsorbed protein aggregates in the film formed at pH 9. The ex situ AFM images indicate multilayer-like films and that the film becomes more compact and stable in NaCl solution after the cross-linking. The IRAS results reveal the absorption bands of Mefp-1 on carbon steel before and after NaIO{sub 4} induced oxidation of the pre-adsorbed protein. Within a short exposure time, a certain corrosion protection effect was noted for the pre-formed Mefp-1 film in 0.1 M NaCl solution. Cross-linking the pre-adsorbed film by NaIO{sub 4} oxidation significantly enhanced the protection efficiency by up to 80%. - Highlights: Black-Right-Pointing-Pointer Mussel protein was tested as 'green' corrosion protection strategy for steel. Black-Right-Pointing-Pointer At pH 9, the protein adsorbs on carbon steel and forms a multilayer-like film. Black-Right-Pointing-Pointer NaIO{sub 4} leads to structural changes and cross-linking of the protein film. Black-Right-Pointing-Pointer Cross-linking results in a dense and compact film with increased stability. Black-Right-Pointing-Pointer Cross-linking of preformed film significantly enhances the corrosion protection.

  15. [Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

    Science.gov (United States)

    Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

    2014-07-01

    In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

  16. Conductivity of Langmuir-Blodgett films of a disk-shaped liquid-crystalline molecule-DNA complex studied by current-sensing atomic force microscopy

    Science.gov (United States)

    Nayak, Alpana; Suresh, K. A.

    2008-08-01

    We have studied the electrical conductivity in monolayer films of an ionic disk-shaped liquid-crystal molecule, pyridinium tethered with hexaalkoxytriphenylene (PyTp), and its complex with DNA by current-sensing atomic force microscopy (CS-AFM). The pure PyTp and PyTp-DNA complex monolayer films were first formed at the air-water interface and then transferred onto conducting substrates by the Langmuir-Blodgett (LB) technique to study the nanoscale electron transport through these films. The conductive tip of CS-AFM, the LB film, and the metal substrate form a nanoscopic metal-LB film-metal (M-LB-M) junction. We have measured the current-voltage (I-V) characteristics for the M-LB-M junction using CS-AFM and have analyzed the data quantitatively. We find that the I-V curves fit well to the Fowler-Nordheim (FN) model, suggesting electron tunneling to be a possible mechanism for electron transport in our system. Further, analysis of the I-V curves based on the FN model yields the barrier heights of PyTp-DNA complex and pure PyTp films. Electron transport studies of films of ionic disk-shaped liquid-crystal molecules and their complex with DNA are important from the point of view of their applications in organic electronics.

  17. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO2 thin films grown by atomic layer deposition at different temperatures

    Science.gov (United States)

    Saha, D.; Ajimsha, R. S.; Rajiv, K.; Mukherjee, C.; Gupta, M.; Misra, P.; Kukreja, L. M.

    2014-10-01

    TiO2 thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (Ts) in a wide range (50 °C ≤ Ts ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (Ts ≤ 150 °C) to the nanocrystalline films (2500 < Ts ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple-DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  18. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antim