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Sample records for hfet us06 sc03

  1. 40 CFR 600.113-12 - Fuel economy and carbon-related exhaust emission calculations for FTP, HFET, US06, SC03 and cold...

    Science.gov (United States)

    2010-07-01

    ... Gravity), or API Gravity of Crude Petroleum and Liquid Petroleum Products by Hydrometer Method... Gravity), or API Gravity of Crude Petroleum and Liquid Petroleum Products by Hydrometer Method... Petroleum Products by Hydrometer Method” (incorporated by reference at § 600.011-93) for the gasoline fuel...

  2. 40 CFR 600.113-08 - Fuel economy calculations for FTP, HFET, US06, SC03 and cold temperature FTP tests.

    Science.gov (United States)

    2010-07-01

    ... (Specific Gravity), or API Gravity of Crude Petroleum and Liquid Petroleum Products by Hydrometer Method... Products by Hydrometer Method” for the blend. This incorporation by reference was approved by the Director... Gravity of Crude Petroleum and Liquid Petroleum Products by Hydrometer Method” for the gasoline fuel...

  3. SEU measurements on HFETS and HFET SRAMS

    International Nuclear Information System (INIS)

    Remke, R.L.; Witmer, S.B.; Jones, S.D.F.; Barber, F.E.; Flesner, L.D.; O'Brien, M.E.

    1989-01-01

    The single event upset (SEU) response of n + -AlGaAs/GaAs heterostructure field effect transistors(HFETs--also known as SDHTs, HEMTs, MODFETs, and TEGFETs) and HFET static random access memories (SRAMs) was evaluated by measuring their response to focused electron pulses. Initially, focused electron beam pulses were used to measure and model HFET drain and gate SEU responses. Circuit simulations using these SEU models predicted that an HFET memory is most vulnerable to a single particle event in the area between the drain and the source (drain hit) of the OFF pull down HFET. Subsequent testing of an HFET SRAM cell confirmed this prediction. The authors discuss how these first SEU evaluations of HFETs and HFET memories show that measurements on individual HFETs and circuit simulations of SEU hits may be used to predict the SEU response of HFET memories

  4. 40 CFR 86.159-08 - Exhaust emission test procedures for US06 emissions.

    Science.gov (United States)

    2010-07-01

    ..., CH4, and NOX. (b) Dynamometer activities. (1) All official US06 tests shall be run on a large single... be supplied on request of the Administrator. (6) The drive wheel tires may be inflated up to a gauge... prevent tire damage. The drive wheel tire pressure shall be reported with the test results. (7) The...

  5. Aportaciones al estudio de la respuesta con la temperatura de las HFETs en continua

    OpenAIRE

    González Pérez, Benito

    2011-01-01

    Programa de doctorado: Ingeniería Electrónica. Premio Extraordinario, Área de Tecnológicas En esta memoria se presentan los resultados de las investigaciones realizadas sobre la influencia de la temperatura en el funcionamiento de los HFETs, cuando operan en régimen de continua.

  6. Off-state stress and pulse response investigation of InAl/Ga HFET

    International Nuclear Information System (INIS)

    Florovic, M.; Hronec, P.; Kovac, J.; Skriniarova, J.; Donoval, D.; Kordos, P.

    2011-01-01

    In this study In 0.18 Al 0.82 N/GaN HFETs were off-state tested under high drain bias, I-V characteristics were measured using standard DC voltage source (drain-source, gate-source). Subsequently drain current responses on pulse gate-source voltage for various drain-source voltages were recorded and analysed. Static performance of InAlN/GaN HFETs with AlN buffer layer prepared at different conditions were analysed before, during and after the off-state stress. The static output I-V characteristics show the maximum drain current I d ≅ 0,44 A/mm for V gs = 6 V, the device has pinch-off at V gs - 4.4 V. The drain and gate currents of the InAlN/GaN HFET were measured continuously during the off-state stress (V ds = 30 V, V gs = -4.4 V), a partial increase of the drain/gate current was observed after this interruption, which indicates on some recovery effect. The devices were characterised in details after the total stress time of 60 min., as well as after 30 min without the stress, the output I-V characteristic show permanent off-state stress degradation. This effect will be studied in details in the next. (authors)

  7. Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

    International Nuclear Information System (INIS)

    Su, Y.K.; Chang, S.J.; Kuan, T.M.; Ko, C.H.; Webb, J.B.; Lan, W.H.; Cherng, Y.T.; Chen, S.C.

    2004-01-01

    Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

  8. Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

    Science.gov (United States)

    Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

    2014-06-01

    We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.

  9. 40 CFR 600.206-08 - Calculation and use of FTP-based and HFET-based fuel economy values for vehicle configurations.

    Science.gov (United States)

    2010-07-01

    ... EMISSIONS OF MOTOR VEHICLES Fuel Economy Regulations for 1977 and Later Model Year Automobiles-Procedures... economy value exists for an electric vehicle configuration, all values for that vehicle configuration are... HFET-based fuel economy values for vehicle configurations. 600.206-08 Section 600.206-08 Protection of...

  10. 40 CFR 600.208-12 - Calculation of FTP-based and HFET-based fuel economy and carbon-related exhaust emission values...

    Science.gov (United States)

    2010-07-01

    ...-based fuel economy and carbon-related exhaust emission values for a model type. 600.208-12 Section 600... ECONOMY AND CARBON-RELATED EXHAUST EMISSIONS OF MOTOR VEHICLES Fuel Economy Regulations for 1977 and Later...-based and HFET-based fuel economy and carbon-related exhaust emission values for a model type. (a) Fuel...

  11. PLUG-IN HYBRID ELECTRIC VEHICLE AND HYBRID ELECTRIC VEHICLE EMISSIONS UNDER FTP AND US06 CYCLES AT HIGH, AMBIENT, AND LOW TEMPERATURES

    Energy Technology Data Exchange (ETDEWEB)

    Seidman, M.R.; Markel, T.

    2008-01-01

    The concept of a Plug-in Hybrid Electric Vehicle (PHEV) is to displace consumption of gasoline by using electricity from the vehicle’s large battery pack to power the vehicle as much as possible with minimal engine operation. This paper assesses the PHEV emissions and operation. Currently, testing of vehicle emissions is done using the federal standard FTP4 cycle on a dynamometer at ambient (75°F) temperatures. Research was also completed using the US06 cycle. Furthermore, research was completed at high (95°F) and low (20°F) temperatures. Initial dynamometer testing was performed on a stock Toyota Prius under the standard FTP4 cycle, and the more demanding US06 cycle. Each cycle was run at 95°F, 75°F, and 20°F. The testing was repeated with the same Prius retrofi tted with an EnergyCS Plug-in Hybrid Electric system. The results of the testing confi rm that the stock Prius meets Super-Ultra Low Emission Vehicle requirements under current testing procedures, while the PHEV Prius under current testing procedures were greater than Super-Ultra Low Emission Vehicle requirements, but still met Ultra Low Emission Vehicle requirements. Research points to the catalyst temperature being a critical factor in meeting emission requirements. Initial engine emissions pass through with minimal conversion until the catalyst is heated to typical operating temperatures of 300–400°C. PHEVs also have trouble maintaining the minimum catalyst temperature throughout the entire test because the engine is turned off when the battery can support the load. It has been observed in both HEVs and PHEVs that the catalyst is intermittently unable to reduce nitrogen oxide emissions, which causes further emission releases. Research needs to be done to combat the initial emission spikes caused by a cold catalyst. Research also needs to be done to improve the reduction of nitrogen oxides by the catalyst system.

  12. Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in Gallium Nitride HFET Technology Using the Doherty technique

    Science.gov (United States)

    Seneviratne, Sashieka

    With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as 'pico-cells' are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm2 monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are

  13. ESO65-SC03, Teutsch 106, Turner 6

    Indian Academy of Sciences (India)

    GIREESH C. JOSHI

    2017-11-27

    Nov 27, 2017 ... and two colour magnitude ratio (TCMR) values of each cluster is determined by utilizing the WISE and PPMXL .... In some cases, the stellar density of two identified sequences ...... The multi-band catalogue seems to be more ...

  14. Analytical charge control model for AlGaN/GaN MIS-HFETs including an undepleted barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Shenghui, Lu; Jiangfeng, Du; Qian, Luo; Qi, Yu; Wei, Zhou; Jianxin, Xia; Mohua, Yang, E-mail: lushenghui@sohu.co [State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    An analytical charge control model considering the insulator/AlGaN interface charge and undepleted Al-GaN barrier layer is presented for AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors (MIS-HFETs) over the entire operation range of gate voltage. The whole process of charge control is analyzed in detail and partitioned into four regions: I-full depletion, II-partial depletion, III-neutral region and IV-electron accumulation at the insulator/AlGaN interface. The results show that two-dimensional electron gas (2DEG) saturates at the boundary of region II/III and the gate voltage should not exceed the 2DEG saturation voltage in order to keep the channel in control. In addition, the span of region II accounts for about 50% of the range of gate voltage before 2DEG saturates. The good agreement of the calculated transfer characteristic with the measured data confirms the validity of the proposed model. (semiconductor devices)

  15. Investigations of AlGaN/GaN HFETs utilizing post-metallization etching by nitric acid treatment

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Tsai, Chih-Ming; Ho, Chiu-Sheng; Lee, Ching-Sung

    2013-01-01

    This work investigates AlGaN/GaN heterostructure field-effect transistors (HFETs) processed by using a simple post-metallization etching (PME) treatment. Decreased gate length (L G ) can be achieved by using nitric acid (HNO 3 ) PME treatment owing to the high etching selectivity of HNO 3 of Ni against the Au and GaN layer. Influences on L G , etched gate profiles and device characteristics with respect to different PME processing parameters by HNO 3 treatment are systematically investigated. Optimum device performance is obtained as L G was reduced to 0.5 µm by using a 1 µm long gate mask by immersing the device into a 45% diluted HNO 3 solution for 35 s. Improved device performances, including maximum drain–source current density (I DS,max : 657.6 mA mm −1 → 898.5 mA mm −1 ), drain–source saturation current density at zero gate bias (I DSS0 : 448.3 mA mm −1 → 653.4 mA mm −1 ), maximum extrinsic transconductance (g m,max : 158.3 mS mm −1 → 219.2 mS mm −1 ), unity-gain cut-off frequency (f T : 12.35 GHz → 22.05 GHz), maximum oscillation frequency (f max : 17.55 GHz → 29.4 GHz) and power-added efficiency (P.A.E.: 26.3% → 34.5%) compared to the untreated reference device, have been successfully achieved. (invited paper)

  16. Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

    Science.gov (United States)

    Sullivan, Gerry

    2001-01-01

    For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

  17. Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

    Science.gov (United States)

    Bilbro, Griff L.; Hou, Danqiong; Yin, Hong; Trew, Robert J.

    2009-02-01

    We have quantitatively modeled the conduction current and charge storage of an HFET in terms its physical dimensions and material properties. For DC or small-signal RF operation, no adjustable parameters are necessary to predict the terminal characteristics of the device. Linear performance measures such as small-signal gain and input admittance can be predicted directly from the geometric structure and material properties assumed for the device design. We have validated our model at low-frequency against experimental I-V measurements and against two-dimensional device simulations. We discuss our recent extension of our model to include a larger class of electron velocity-field curves. We also discuss the recent reformulation of our model to facilitate its implementation in commercial large-signal high-frequency circuit simulators. Large signal RF operation is more complex. First, the highest CW microwave power is fundamentally bounded by a brief, reversible channel breakdown in each RF cycle. Second, the highest experimental measurements of efficiency, power, or linearity always require harmonic load pull and possibly also harmonic source pull. Presently, our model accounts for these facts with an adjustable breakdown voltage and with adjustable load impedances and source impedances for the fundamental frequency and its harmonics. This has allowed us to validate our model for large signal RF conditions by simultaneously fitting experimental measurements of output power, gain, and power added efficiency of real devices. We show that the resulting model can be used to compare alternative device designs in terms of their large signal performance, such as their output power at 1dB gain compression or their third order intercept points. In addition, the model provides insight into new device physics features enabled by the unprecedented current and voltage levels of AlGaN/GaN HFETs, including non-ohmic resistance in the source access regions and partial depletion of

  18. 40 CFR 86.160-00 - Exhaust emission test procedure for SC03 emissions.

    Science.gov (United States)

    2010-07-01

    ... percent relative humidity), a solar heat load intensity of 850 W/m2, and vehicle cooling air flow....161-00. (ii) Turn on the solar heating system. (iii) All vehicle test phases of preconditioning, soak...) Exhaust Emission Measurement Activities. The following activities are performed, when applicable, in order...

  19. 40 CFR 86.159-00 - Exhaust emission test procedures for US06 emissions.

    Science.gov (United States)

    2010-07-01

    ... run on a large single roll electric dynamometer, or an approved equivalent dynamometer configuration... validity, shall be supplied on request of the Administrator. (6) The drive wheel tires may be inflated up... psi, in order to prevent tire damage. The drive wheel tire pressure shall be reported with the test...

  20. Complementary HFET technology for wireless digital and microwave applications

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Zolper, J.C.; Dubbert, D.F. [and others

    1996-09-01

    Development of a complementary heterostructure field effect transistor (CHFET) technology for low-power, mixed-mode digital-microwave applications is presented. Digital CHFET technology with independently optimizable transistors has been shown to operate with 319 ps loaded gate delays at 8.9 fJ. Power consumption is dominated by leakage currents of the p-channel FET, while performance is determined by the characteristics of 0.7 {mu}m gate length devices. As a microwave technology, the nJFET forms the basis of low-power cirucitry without any modification to the digital process. Narrow band amplification with a 0.7x100 {mu}m nJFET has been demonstrated at 2.1-2.4 GHz with gains of 8-10 dB at 1 mW power. These amplifiers showed a minimum noise figure of 2.5 dB. Next generation CHFET transistors with sub 0.5 {mu}m gate lengths have also been developed. Cutoff frequencies of 49 and 11.5 GHz were achieved for n- and p-channel FETs with 0.3 and 0.4 {mu}m gates, respectively. These FETs will enable enhancements in both digital and microwave circuits.

  1. Complementary HFET technology for low-power mixed-mode applications

    Energy Technology Data Exchange (ETDEWEB)

    Baca, A.G.; Sherwin, M.E.; Zolper, J.C.; Dubbert, D.F.; Hietala, V.M.; Shul, R.J.; Sloan, L.R.; Hafich, M.J.

    1996-06-01

    Development of a complementary heterostructure field effect transistor (CHFET) technology for low-power, mixed-mode digital-microwave applications is presented. An earlier digital CHFET technology with independently optimizable transistors which operated with 319 ps loaded gate delays at 8.9 fJ is reviewed. Then work demonstrating the applicability of the digital nJFET device as a low-power microwave transistor in a hybrid microwave amplifier without any modification to the digital process is presented. A narrow band amplifier with a 0.7 {times} 100 {micro}m nJFET as the active element was designed, constructed, and tested. At 1 mW operating power, the amplifier showed 9.7 dB of gain at 2.15 GHz and a minimum noise figure of 2.5 dB. In addition, next generation CHFET transistors with sub 0.5 {micro}m gate lengths were developed. Cutoff frequencies, f{sub t} of 49 GHz and 11.5 GHz were achieved for n- and p-channel FETs with 0.3 and 0.4 {micro}m gates, respectively. These FETs will enable both digital and microwave circuits with enhanced performance.

  2. Window for Optimal Frequency Operation and Reliability of 3DEG and 2DEG Channels for Oxide Microwave MESFETs and HFETs

    Science.gov (United States)

    2016-04-01

    of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services , Directorate for Information...open circles); at elevated background temperatures: 300 K (open circles and open black star), 500 K (open blue star), and 600 K (open wine star). 5...and 600 K (open wine star). For ZnO the experimental electron drift velocity increases linearly with the applied electric field at electron

  3. 40 CFR 600.206-12 - Calculation and use of FTP-based and HFET-based fuel economy and carbon-related exhaust emission...

    Science.gov (United States)

    2010-07-01

    ... POLICY FUEL ECONOMY AND CARBON-RELATED EXHAUST EMISSIONS OF MOTOR VEHICLES Fuel Economy Regulations for... vehicle under § 600.113(a) and (b) and as approved in § 600.008-08(c), are used to determine FTP-based... value exists for an electric vehicle configuration, that value, rounded to the nearest tenth of a mile...

  4. 40 CFR 600.208-08 - Calculation of FTP-based and HFET-based fuel economy values for a model type.

    Science.gov (United States)

    2010-07-01

    ... the original base level fuel economy values); and (iii) All subconfigurations within the new base... separating subconfigurations from an existing base level and placing them into a new base level. The new base... this paragraph, as containing a new basic engine. The manufacturer will be permitted to designate such...

  5. 300C/15 kW power converter with AlGaN/GaN-Si MOS-HFETs for electric propulsion systems, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Capitalizing on a strong expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor...

  6. The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures

    National Research Council Canada - National Science Library

    McClory, John W

    2008-01-01

    AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured...

  7. GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications

    International Nuclear Information System (INIS)

    Higashiwaki, Masataka; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    We have found that SiN passivation by catalytic chemical vapor deposition (Cat-CVD) can significantly increase an electron density of an AlGaN/GaN heterostructure field-effect transistor (HFET). This effect enables thin-barrier HFET structures to have a high-density two-dimensional electron gas and leads to suppression of short-channel effects. We fabricated 30-nm-gate Al 0.4 Ga 0.6 N(8 nm)/GaN HFETs using Cat-CVD SiN. The maximum drain current density and extrinsic transconductance were 1.49 A/mm and 402 mS/mm, respectively. Current-gain cutoff frequency and maximum oscillation frequency of the HFETs were 181 and 186 GHz, respectively. These high-frequency device characteristics are sufficiently high enough for millimeter-wave applications

  8. The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures

    Science.gov (United States)

    2008-06-01

    potentials used in the discussion. ........... 41 15. Energy band diagram of an unpassivated HFET using Davinci showing the relative heights and...integration into a dose received in the material of interest. The tool used to perform these calculations is the TIGER Monte Carlo electron transport code [30...height and width of the second barrier a model of the HFETs was built in the Davinci modeling program [61]. The resulting energy band diagram is shown in

  9. High speed heterostructure devices

    CERN Document Server

    Beer, Albert C; Willardson, R K; Kiehl, Richard A; Sollner, T C L Gerhard

    1994-01-01

    Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices.

  10. Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

    Directory of Open Access Journals (Sweden)

    Peter Kordos

    2005-01-01

    Full Text Available Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor HFETs is compared. It is found that MOSHFETs exhibit better DC and RF properties than simple HFET counterparts. Deposited SiO2 yielded an increase of the sheet carrier density from 7.6x10^12 cm^-2 to 9.2x10^12 cm^-2 and subsequent increase of the static drain saturation current from 0.75 A/mm to 1.09 A/mm. Small-signal RF characterisation of MOSHFETs showed an extrinsic current gain cut-off frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. These are fully comparable values with state-of-the-art AlGaN/GaN HFETs. Finnaůůy, microwave power measurements confirmed excellent performance of MOSHFETs:the output power measured at 7 GHz is about two-times larger than that of simple unpassived HFET. Thus, a great potential in application of GaN-based MOSHFETs is documented. 

  11. Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Joseph J. Freedsman

    2012-06-01

    Full Text Available The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN and AlGaN layers (DT-AlGaN respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max. Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

  12. Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yan Liu

    2017-08-01

    Full Text Available Using a suitable dual-gate structure, the source-to-drain resistance (RSD of AlGaN/AlN/GaN heterostructure field-effect transistor (HFET with varying gate position has been studied at room temperature. The theoretical and experimental results have revealed a dependence of RSD on the gate position. The variation of RSD with the gate position is found to stem from the polarization Coulomb field (PCF scattering. This finding is of great benefit to the optimization of the performance of AlGaN/AlN/GaN HFET. Especially, when the AlGaN/AlN/GaN HFET works as a microwave device, it is beneficial to achieve the impedance matching by designing the appropriate gate position based on PCF scattering.

  13. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    International Nuclear Information System (INIS)

    Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

    2015-01-01

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs

  14. 11.9 W output power at 4 GHz from 1 mm AlGaN/GaN HEMT

    NARCIS (Netherlands)

    Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

    2008-01-01

    A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Hence, it is obvious that breakdown voltages over 160

  15. Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Gregušová, D., E-mail: Dagmar.Gregusova@savba.sk [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Gucmann, F.; Kúdela, R. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Mičušík, M. [Polymer Institute of Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84541 (Slovakia); Stoklas, R.; Válik, L. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Greguš, J. [Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská dolina, Bratislava SK-84248 (Slovakia); Blaho, M. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology STU, Ilkovičova 3, Bratislava SK-81219 (Slovakia)

    2017-02-15

    Highlights: • AlGaAs/InGaAs/GaAs-based metal oxide semiconductor transistors-MOSHFET. • Thin Al-layer deposited in-situ and oxidize in air – gate insulator. • MOSHFET vs HFET transistor properties, density of traps evaluated. - Abstract: GaAs-based heterostructures exhibit excellent carrier transport properties, mainly the high carrier velocity. An AlGaAs-GaAs heterostructure field-effect transistor (HFET) with an InGaAs channel was prepared using metal-organic chemical vapor deposition (MOVPE). An AlOx layer was formed on the AlGaAs barrier layer by the air-assisted oxidation of a thin Al layer deposited in-situ in an MOVPE reactor immediately after AlGaAs/InGaAs growth. The HFETs and MOSHFETs exhibited a very low trap state density in the order of 10{sup 11} cm{sup −2} eV{sup −1}. Capacitance measurement yielded no significant difference between the HFET and MOSHFET structures. The formation of an AlOx layer modified the surface by partially eliminating surface states that arise from Ga-and As-based native oxides. The presence of an AlOx layer reflected in a reduced gate leakage current, which was evidenced by the two-terminal transistor measurement. Presented preparation procedure and device properties show great potential of AlGaAs/InGaAs-based MOSHFETs.

  16. Journal of Astrophysics and Astronomy | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Astrophysics and Astronomy. Gireesh C. Joshi. Articles written in Journal of Astrophysics and Astronomy. Volume 38 Issue 4 December 2017 pp 72 Research Article. Identification of Stellar Sequences in Various Stellar Systems: ESO65-SC03, Teutsch 106, Turner 6 · Gireesh C. Joshi.

  17. Journal of Astrophysics and Astronomy | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    The origin of the abundance pattern and also the (anti)correlation present ... Association Between the Solar Wind Speed, Interplanetary Magnetic Field .... Relativistic Dynamics in a Matter-Dominated Friedmann Universe ... Identification of Stellar Sequences in Various Stellar Systems: ESO65-SC03, Teutsch 106, Turner 6.

  18. Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Tan, W.S.; Parbrook, P.J.; Hill, G.; Airey, R.J.; Houston, P.A.

    2002-01-01

    Different dielectrics were used for post-processing surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the resulting electrical characteristics examined. An increase in the maximum drain current of approximately 25% was observed after Si 3 N 4 and SiO 2 deposition and ∼15% for annealed SiO on AlGaN/GaN HFETs. In all cases, the passivation was found to increase the gate leakage current with an observed reduction in the leakage activation energy. However, the rise in gate leakage current was least for SiO. The plasma enhanced chemical vapour deposition method was found not to contribute to the passivation mechanism, whilst the presence of Si appears to be an important factor. (author)

  19. The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Lv, Yuanjie; Feng, Zhihong; Gu, Guodong; Han, Tingting; Yin, Jiayun; Liu, Bo; Cai, Shujun; Lin, Zhaojun; Ji, Ziwu; Zhao, Jingtao

    2014-01-01

    The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3 nm and 6 nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barrier thickness. Moreover, using the measured capacitance-voltage and current-voltage characteristics of the fabricated heterostructure field-effect transistors (HFETs) with different Schottky areas on the two heterostuctures, the variations of electron mobility with different gate biases were investigated. Due to enhanced IFR scattering, the influence of polarization Coulomb field (PCF) scattering on electron mobility was found to decrease with increasing AlN barrier layer thickness. However, the PCF scattering remained an important scattering mechanism in the AlN/GaN HFETs.

  20. Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

    Science.gov (United States)

    2015-09-01

    ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

  1. Ion implantation in compound semiconductors for high-performance electronic devices

    International Nuclear Information System (INIS)

    Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

    1996-01-01

    Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb

  2. Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

    Science.gov (United States)

    Ni, Yi-Qiang; He, Zhi-Yuan; Yao, Yao; Yang, Fan; Zhou, De-Qiu; Zhou, Gui-Lin; Shen, Zhen; Zhong, Jian; Zheng, Yue; Zhang, Bai-Jun; Liu, Yang

    2015-05-01

    We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (˜ 109). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

  3. Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Ao, Jin-Ping; Zhu, Huichao

    2016-01-01

    An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl 4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10 −9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. (paper)

  4. Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Matulionis, Arvydas

    2013-01-01

    The problems in the realm of nitride heterostructure field-effect transistors (HFETs) are discussed in terms of a novel fluctuation–dissipation-based approach impelled by a recent demonstration of strong correlation of hot-electron fluctuations with frequency performance and degradation of the devices. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than the conventional heat contained mainly in the acoustic phonon mode. We treat the heat dissipation problem in terms of the hot-phonon lifetime responsible for the conversion of the non-migrant hot phonons into migrant acoustic modes and other vibrations. The lifetime is measured over a wide range of electron density and supplied electric power. The optimal conditions for the dissipation of the LO-mode heat are associated with the plasmon-assisted disintegration of hot phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor phase noise and transistor reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs take place inside the electron density window where the resonant plasmon-assisted ultrafast dissipation of the LO-mode heat comes into play. A novel heterostructure design for the possible improvement of HFET performance is proposed, implemented and tested. (invited review)

  5. WOCSDICE 94 - European Workshop on Compound Semiconductor Devices and Integrated Circuits (18th) Held in Kinsale, Ireland on 29 May-1 June 1994

    Science.gov (United States)

    1994-06-01

    Taskert, M. Demmiler, J. Braunsteint, B. Hughes* and E. SAnchez Dpto. Tecnologfas de las Comunicaciones , Universidad de Vigo, E-36200 Vigo, Spain. Phone...Typical Hall mobilities of MOVPE and MBE grown lattice matched HFET layers 20 InGaAs 10 nm- Vg- 0.4V 60015estimated bulk InA LAs 20 nm 15 sl’,e-rai...P measured 0.3 R measured 1-ti) Rs ~~~0.4 .. .....7. ....... -. C simulated 0.2 C measured 0.1 La ~ ~0.2

  6. A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

    Science.gov (United States)

    Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

    2018-01-01

    A new method to determine the two-dimensional electron gas (2DEG) density distribution of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) after the Si3N4 passivation process has been presented. Detailed device characteristics were investigated and better transport properties have been observed for the passivated devices. The strain variation and the influence of the surface trapping states were analyzed. By using the polarization Coulomb field (PCF) scattering theory, the 2DEG density after passivation was both quantitively and qualitatively determined, which has been increased by 45% under the access regions and decreased by 2% under the gate region.

  7. Assembly of a supercrystal (SC) of the CMS endcap electromagnetic calorimeter

    CERN Multimedia

    J. Williams et al., RAL

    2004-01-01

    The first three pictures show the insertion of the first three rows of crystals into the supercrystal SC03 on Jan. 2004 and the completion of the SC endstops. Fig. 4 shows a complete supercrystal and Fig. 5 its components (alveolar, interface plate, housing, optical fibre, insert, crystal and VPT, endstop). A set of 25 inserts is shown in Fig. 6, while Fig. 7 shows housing, interface plates and inserts. Finally, a SC rear view showing the Vacum Phototriode (VPT) wires through the inserts can be seen in Fig. 8. Fig. 9 and 10 show two supercrystals under test on Dee F and R, respectively.

  8. Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

    2001-01-01

    Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics

  9. Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yingxia Yu

    2013-09-01

    Full Text Available Using the Quasi-Two-Dimensional (quasi-2D model, the current-voltage (I-V characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs with different gate length were simulated based on the measured capacitance-voltage (C-V characteristics and I-V characteristics. By analyzing the simulation results, we found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field scattering, and the difference of the electron mobility mostly caused by the polarization Coulomb field scattering can reach up to 1829.9 cm2/V·s for the prepared AlGaN/AlN/GaN HFET. In addition, it was also found that when the two-dimension electron gas (2DEG sheet density is modulated by the drain-source bias, the electron mobility appears peak with the variation of the 2DEG sheet density, and the ratio of gate length to drain-source distance is smaller, the 2DEG sheet density corresponding to the peak point is higher.

  10. Synthesis and characterization of porous silicon as hydroxyapatite host matrix of biomedical applications.

    Directory of Open Access Journals (Sweden)

    A Dussan

    Full Text Available In this work, porous-silicon samples were prepared by electrochemical etching on p-type (B-doped Silicon (Si wafers. Hydrofluoric acid (HF-ethanol (C2H5OH [HF:Et] and Hydrofluoric acid (HF-dimethylformamide (DMF-C3H7NO [HF:DMF] solution concentrations were varied between [1:2]-[1:3] and [1:7]-[1:9], respectively. Effects of synthesis parameters, like current density, solution concentrations, reaction time, on morphological properties were studied by scanning electron microscopy (SEM and atomic force microscopy (AFM measurements. Pore sizes varying from 20 nm to micrometers were obtained for long reaction times and [HF:Et] [1:2] concentrations; while pore sizes in the same order were observed for [HF:DMF] [1:7], but for shorter reaction time. Greater surface uniformity and pore distribution was obtained for a current density of around 8 mA/cm2 using solutions with DMF. A correlation between reflectance measurements and pore size is presented. The porous-silicon samples were used as substrate for hydroxyapatite growth by sol-gel method. X-ray diffraction (XRD and SEM were used to characterize the layers grown. It was found that the layer topography obtained on PS samples was characterized by the evidence of Hydroxyapatite in the inter-pore regions and over the surface.

  11. Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

    Science.gov (United States)

    Hanna, Mina J.; Zhao, Han; Lee, Jack C.

    2012-10-01

    We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

  12. Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

    International Nuclear Information System (INIS)

    Sarua, A; Ji, Hangfeng; Pomeroy, J W; Kuball, M; Uren, M J; Martin, T

    2010-01-01

    Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors (HFETs), i.e. the strain induced by applying bias to a transistor, was studied using micro-Raman scattering spectroscopy as a function of applied source–drain voltage for different GaN buffer doping levels and substrate types. By monitoring the phonon frequency shifts and line width of the E 2 and A 1 (LO) phonon modes of GaN, a considerable piezoelectric strain/stress was found in undoped devices, which exhibited a saturation above 40 V bias. This saturation voltage was used to quantify the deep acceptor concentration in the GaN buffer layer. Using experimental Raman data and numerical modelling of the electric field distribution in the device, it was furthermore established that Fe doping causes confinement of the strain/stress to the vicinity of the AlGaN/GaN interface, i.e. near the electron channel, with potential implications for device reliability. It was concluded that varying the structure and doping in the buffer layer has the potential to modify the converse piezoelectric strain and hence affect reliability issues in AlGaN/GaN HFETs

  13. Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Yu Ying-Xia; Lin Zhao-Jun; Luan Chong-Biao; Yang Ming; Wang Yu-Tang; Lü Yuan-Jie; Feng Zhi-Hong

    2014-01-01

    By making use of the quasi-two-dimensional (quasi-2D) model, the current–voltage (I–V) characteristics of In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance–voltage (C–V) characteristics and I–V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm 2 /V·s for the prepared In 0.18 Al 0.82 N/AlN/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain–source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Synthesis and characterization of porous silicon as hydroxyapatite host matrix of biomedical applications.

    Science.gov (United States)

    Dussan, A; Bertel, S D; Melo, S F; Mesa, F

    2017-01-01

    In this work, porous-silicon samples were prepared by electrochemical etching on p-type (B-doped) Silicon (Si) wafers. Hydrofluoric acid (HF)-ethanol (C2H5OH) [HF:Et] and Hydrofluoric acid (HF)-dimethylformamide (DMF-C3H7NO) [HF:DMF] solution concentrations were varied between [1:2]-[1:3] and [1:7]-[1:9], respectively. Effects of synthesis parameters, like current density, solution concentrations, reaction time, on morphological properties were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements. Pore sizes varying from 20 nm to micrometers were obtained for long reaction times and [HF:Et] [1:2] concentrations; while pore sizes in the same order were observed for [HF:DMF] [1:7], but for shorter reaction time. Greater surface uniformity and pore distribution was obtained for a current density of around 8 mA/cm2 using solutions with DMF. A correlation between reflectance measurements and pore size is presented. The porous-silicon samples were used as substrate for hydroxyapatite growth by sol-gel method. X-ray diffraction (XRD) and SEM were used to characterize the layers grown. It was found that the layer topography obtained on PS samples was characterized by the evidence of Hydroxyapatite in the inter-pore regions and over the surface.

  15. Normally-off GaN Transistors for Power Applications

    International Nuclear Information System (INIS)

    Hilt, O; Bahat-Treidel, E; Brunner, F; Knauer, A; Zhytnytska, R; Kotara, P; Wuerfl, J

    2014-01-01

    Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.

  16. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein.

    Science.gov (United States)

    Lee, Hee Ho; Bae, Myunghan; Jo, Sung-Hyun; Shin, Jang-Kyoo; Son, Dong Hyeok; Won, Chul-Ho; Jeong, Hyun-Min; Lee, Jung-Hee; Kang, Shin-Won

    2015-07-28

    In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

  17. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

    Directory of Open Access Journals (Sweden)

    Hee Ho Lee

    2015-07-01

    Full Text Available In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT-based biosensor for the detection of C-reactive protein (CRP using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

  18. Analytical high frequency GaN HEMT model for noise simulations

    Science.gov (United States)

    Eshetu Muhea, Wondwosen; Mulugeta Yigletu, Fetene; Lazaro, Antonio; Iñiguez, Benjamin

    2017-12-01

    A compact high frequency model for AlGaN/GaN HEMT device valid for noise simulations is presented in this paper. The model is developed based on active transmission line approach and linear two port noise theory that makes it applicable for quasi static as well as non-quasi static device operation. The effects of channel length modulation and velocity saturation are discussed. Moreover, the effect of the gate leakage current on the noise performance of the device is investigated. It is shown that there is an apparent increase in noise generated in the device due to the gate current related shot noise. The common noise figures of merit for HFET are calculated and verified with experimental data.

  19. EV range sensitivity analysis

    Energy Technology Data Exchange (ETDEWEB)

    Ostafew, C. [Azure Dynamics Corp., Toronto, ON (Canada)

    2010-07-01

    This presentation included a sensitivity analysis of electric vehicle components on overall efficiency. The presentation provided an overview of drive cycles and discussed the major contributors to range in terms of rolling resistance; aerodynamic drag; motor efficiency; and vehicle mass. Drive cycles that were presented included: New York City Cycle (NYCC); urban dynamometer drive cycle; and US06. A summary of the findings were presented for each of the major contributors. Rolling resistance was found to have a balanced effect on each drive cycle and proportional to range. In terms of aerodynamic drive, there was a large effect on US06 range. A large effect was also found on NYCC range in terms of motor efficiency and vehicle mass. figs.

  20. 78 FR 42532 - Prospective Grant of Start-Up Exclusive Evaluation Option License: Methods of Treating Giardiasis...

    Science.gov (United States)

    2013-07-16

    .../US2011/055902 filed October 12, 2011 (E-211-2010/2-PCT-01); US patent application No. 13/878,832 filed April 11, 2013 (E-211-2010/2-US-06); European patent application No. 11773158.8 filed May 2, 2013 (E-211-2010/2-EP-04); Canadian application No. 2,814,694 filed April 11, 2013 (E-211-2010/2-CA-03); Australia...

  1. Effect of Drive Cycle and Gasoline Particulate Filter on the Size and Morphology of Soot Particles Emitted from a Gasoline-Direct-Injection Vehicle.

    Science.gov (United States)

    Saffaripour, Meghdad; Chan, Tak W; Liu, Fengshan; Thomson, Kevin A; Smallwood, Gregory J; Kubsh, Joseph; Brezny, Rasto

    2015-10-06

    The size and morphology of particulate matter emitted from a light-duty gasoline-direct-injection (GDI) vehicle, over the FTP-75 and US06 transient drive cycles, have been characterized by transmission-electron-microscope (TEM) image analysis. To investigate the impact of gasoline particulate filters on particulate-matter emission, the results for the stock-GDI vehicle, that is, the vehicle in its original configuration, have been compared to the results for the same vehicle equipped with a catalyzed gasoline particulate filter (GPF). The stock-GDI vehicle emits graphitized fractal-like aggregates over all driving conditions. The mean projected area-equivalent diameter of these aggregates is in the 78.4-88.4 nm range and the mean diameter of primary particles varies between 24.6 and 26.6 nm. Post-GPF particles emitted over the US06 cycle appear to have an amorphous structure, and a large number of nucleation-mode particles, depicted as low-contrast ultrafine droplets, are observed in TEM images. This indicates the emission of a substantial amount of semivolatile material during the US06 cycle, most likely generated by the incomplete combustion of accumulated soot in the GPF during regeneration. The size of primary particles and soot aggregates does not vary significantly by implementing the GPF over the FTP-75 cycle; however, particles emitted by the GPF-equipped vehicle over the US06 cycle are about 20% larger than those emitted by the stock-GDI vehicle. This may be attributed to condensation of large amounts of organic material on soot aggregates. High-contrast spots, most likely solid nonvolatile cores, are observed within many of the nucleation-mode particles emitted over the US06 cycle by the GPF-equipped vehicle. These cores are either generated inside the engine or depict incipient soot particles which are partially carbonized in the exhaust line. The effect of drive cycle and the GPF on the fractal parameters of particles, such as fractal dimension and

  2. Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

    Science.gov (United States)

    Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

    2016-12-01

    Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

  3. Eddy current testing of composite pressure vessels

    Science.gov (United States)

    Casperson, R.; Pohl, R.; Munzke, D.; Becker, B.; Pelkner, M.

    2018-04-01

    The use of composite pressure vessels instead of conventional vessels made of steel or aluminum grew strongly over the last decade. The reason for this trend is the tremendous weight saving in the case of composite vessels. However, the long-time behavior is not fully understood for filling and discharging cycles and creep strength and their influence on the CFRP coating (carbon fiber reinforced plastics) and the internal liner (steel, aluminum, or plastics). The CFRP ensures the pressure resistance while the inner liner is used as a container for liquid or gas. To overcome the missing knowledge of aging, BAM started an internal project to investigate degradation of these material systems. Therefore, applicable testing methods like eddy current testing are needed. Normally, high-frequency eddy current testing (HF-ET, f > 10 MHz) is deployed for CFRP due to its low conductivity of the fiber, which is in the order of 0.01 MS/s, and the capacitive coupling between the fibers. Nevertheless, in some cases conventional ET can be applied. We show a concise summary of studies on the application of conventional ET of composite pressure vessels.

  4. Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

    International Nuclear Information System (INIS)

    Ni, Yiqiang; Zhou, Deqiu; Chen, Zijun; Zheng, Yue; He, Zhiyuan; Yang, Fan; Yao, Yao; Zhou, Guilin; Shen, Zhen; Zhong, Jian; Zhang, Baijun; Liu, Yang; Wu, Zhisheng

    2015-01-01

    The influence of different C-doping locations in a GaN/Si structure with a GaN/AlN superlattice (SL) buffer on the material and electrical properties of GaN/Si was studied. The introduction of C doping can remarkably degrade the crystal quality of the buffer. C-doping of a top GaN buffer can introduce compressive stress into the top GaN due to the size effect, while C-doping in a SL buffer can impair the compressive stress provided from the SL buffer to the top GaN. It is found that introducing high-density carbon into the whole buffer can result in a more strain-balanced GaN/Si system with small deterioration of the 2DEG channel. Furthermore, the whole buffer C-doping method is an effective and easy way to achieve a thin buffer with low leakage current and high breakdown voltage (266 V@1 nA mm −1 ; 698 V@10 μA mm −1 ; 912 V@1 mA mm −1 ). By using the whole-buffer C-doping method, a 2.5 μm-thick AlGaN/GaN HFET with a breakdown voltage higher than 900 V was achieved, and the breakdown voltage per unit buffer thickness can reach 181 V μm −1 . (paper)

  5. Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

    Science.gov (United States)

    Ishii, Hajime; Ueno, Hiroaki; Ueda, Tetsuzo; Endoh, Tetsuo

    2018-06-01

    In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (I dmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% I dmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (g m) peak of the g m–V g characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

  6. An Experiment and Detection Scheme for Cavity-Based Light Cold Dark Matter Particle Searches

    Directory of Open Access Journals (Sweden)

    Masroor H. S. Bukhari

    2017-01-01

    Full Text Available A resonance detection scheme and some useful ideas for cavity-based searches of light cold dark matter particles (such as axions are presented, as an effort to aid in the on-going endeavors in this direction as well as for future experiments, especially in possibly developing a table-top experiment. The scheme is based on our idea of a resonant detector, incorporating an integrated tunnel diode (TD and GaAs HEMT/HFET (High-Electron Mobility Transistor/Heterogeneous FET transistor amplifier, weakly coupled to a cavity in a strong transverse magnetic field. The TD-amplifier combination is suggested as a sensitive and simple technique to facilitate resonance detection within the cavity while maintaining excellent noise performance, whereas our proposed Halbach magnet array could serve as a low-noise and permanent solution replacing the conventional electromagnets scheme. We present some preliminary test results which demonstrate resonance detection from simulated test signals in a small optimal axion mass range with superior signal-to-noise ratios (SNR. Our suggested design also contains an overview of a simpler on-resonance dc signal read-out scheme replacing the complicated heterodyne read-out. We believe that all these factors and our propositions could possibly improve or at least simplify the resonance detection and read-out in cavity-based DM particle detection searches (and other spectroscopy applications and reduce the complications (and associated costs, in addition to reducing the electromagnetic interference and background.

  7. GaN transistors on Si for switching and high-frequency applications

    Science.gov (United States)

    Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

    2014-10-01

    In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

  8. Consumption of Alcopops During Brain Maturation Period: Higher Impact of Fructose Than Ethanol on Brain Metabolism

    Directory of Open Access Journals (Sweden)

    Dounia El Hamrani

    2018-05-01

    Full Text Available Alcopops are flavored alcoholic beverages sweetened by sodas, known to contain fructose. These drinks have the goal of democratizing alcohol among young consumers (12–17 years old and in the past few years have been considered as fashionable amongst teenagers. Adolescence, however, is a key period for brain maturation, occurring in the prefrontal cortex and limbic system until 21 years old. Therefore, this drinking behavior has become a public health concern. Despite the extensive literature concerning the respective impacts of either fructose or ethanol on brain, the effects following joint consumption of these substrates remains unknown. Our objective was to study the early brain modifications induced by a combined diet of high fructose (20% and moderate amount of alcohol in young rats by 13C Nuclear Magnetic Resonance (NMR spectroscopy. Wistar rats had isocaloric pair-fed diets containing fructose (HF, 20%, ethanol (Et, 0.5 g/day/kg or both substrates at the same time (HFEt. After 6 weeks of diet, the rats were infused with 13C-glucose and brain perchloric acid extracts were analyzed by NMR spectroscopy (1H and 13C. Surprisingly, the most important modifications of brain metabolism were observed under fructose diet. Alterations, observed after only 6 weeks of diet, show that the brain is vulnerable at the metabolic level to fructose consumption during late-adolescence throughout adulthood in rats. The main result was an increase in oxidative metabolism compared to glycolysis, which may impact lactate levels in the brain and may, at least partially, explain memory impairment in teenagers consuming alcopops.

  9. GaN Based Electronics And Their Applications

    Science.gov (United States)

    Ren, Fan

    2002-03-01

    The Group III-nitrides were initially researched for their promise to fill the void for a blue solid state light emitter. Electronic devices from III-nitrides have been a more recent phenomenon. The thermal conductivity of GaN is three times that of GaAs. For high power or high temperature applications, good thermal conductivity is imperative for heat removal or sustained operation at elevated temperatures. The development of III-N and other wide bandgap technologies for high temperature applications will likely take place at the expense of competing technologies, such as silicon-on-insulator (SOI), at moderate temperatures. At higher temperatures (>300°C), novel devices and components will become possible. The automotive industry will likely be one of the largest markets for such high temperature electronics. One of the most noteworthy advantages for III-N materials over other wide bandgap semiconductors is the availability of AlGaN/GaN and InGaN/GaN heterostructures. A 2-dimensional electron gas (2DEG) has been shown to exist at the AlGaN/GaN interface, and heterostructure field effect transistors (HFETs) from these materials can exhibit 2DEG mobilities approaching 2000 cm2 / V?s at 300K. Power handling capabilities of 12 W/mm appear feasible, and extraordinary large signal performance has already been demonstrated, with a current state-of-the-art of >10W/mm at X-band. In this talk, high speed and high temperature AlGaN/GaN HEMTs as well as MOSHEMTs, high breakdown voltage GaN (>6KV) and AlGaN (9.7 KV) Schottky diodes, and their applications will be presented.

  10. Electro-thermal characterization of Lithium Iron Phosphate cell with equivalent circuit modeling

    International Nuclear Information System (INIS)

    Saw, L.H.; Ye, Y.; Tay, A.A.O.

    2014-01-01

    Highlights: • We modeled the electrical and thermal behavior of the Li-ion battery. • We validated the simulation results with experimental studies. • We studied the thermal response of the battery pack using UDDS and US06 test. • Active cooling system is needed to prolong life cycle of cell. - Abstract: Prediction of the battery performance is important in the development of the electric vehicles battery pack. A battery model that is capable to reproduce I–V characteristic, thermal response and predicting the state of charge of the battery will benefit the development of cell and reduce time to market for electric vehicles. In this work, an equivalent circuit model coupled with the thermal model is used to analyze the electrical and thermal behavior of Lithium Iron Phosphate pouch cell under various operating conditions. The battery model is comprised three RC blocks, one series resistor and one voltage source. The parameters of the battery model are extracted from pulse discharge curve under different temperatures. The simulations results of the battery model under constant current discharge and pulse charge and discharge show a good agreement with experimental data. The validated battery model is then extended to investigate the dynamic behavior of the electric vehicle battery pack using UDDS and US06 test cycle. The simulation results show that an active thermal management system is required to prolong the calendar life and ensure safety of the battery pack

  11. Black carbon emissions in gasoline exhaust and a reduction alternative with a gasoline particulate filter.

    Science.gov (United States)

    Chan, Tak W; Meloche, Eric; Kubsh, Joseph; Brezny, Rasto

    2014-05-20

    Black carbon (BC) mass and solid particle number emissions were obtained from two pairs of gasoline direct injection (GDI) vehicles and port fuel injection (PFI) vehicles over the U.S. Federal Test Procedure 75 (FTP-75) and US06 Supplemental Federal Test Procedure (US06) drive cycles on gasoline and 10% by volume blended ethanol (E10). BC solid particles were emitted mostly during cold-start from all GDI and PFI vehicles. The reduction in ambient temperature had significant impacts on BC mass and solid particle number emissions, but larger impacts were observed on the PFI vehicles than the GDI vehicles. Over the FTP-75 phase 1 (cold-start) drive cycle, the BC mass emissions from the two GDI vehicles at 0 °F (-18 °C) varied from 57 to 143 mg/mi, which was higher than the emissions at 72 °F (22 °C; 12-29 mg/mi) by a factor of 5. For the two PFI vehicles, the BC mass emissions over the FTP-75 phase 1 drive cycle at 0 °F varied from 111 to 162 mg/mi, higher by a factor of 44-72 when compared to the BC emissions of 2-4 mg/mi at 72 °F. The use of a gasoline particulate filter (GPF) reduced BC emissions from the selected GDI vehicle by 73-88% at various ambient temperatures over the FTP-75 phase 1 drive cycle. The ambient temperature had less of an impact on particle emissions for a warmed-up engine. Over the US06 drive cycle, the GPF reduced BC mass emissions from the GDI vehicle by 59-80% at various temperatures. E10 had limited impact on BC emissions from the selected GDI and PFI vehicles during hot-starts. E10 was found to reduce BC emissions from the GDI vehicle by 15% at standard temperature and by 75% at 19 °F (-7 °C).

  12. Investigation of Transmission Warming Technologies at Various Ambient Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Jehlik, Forrest; Iliev, Simeon; Wood, Eric; Gonder, Jeff

    2017-03-28

    This work details two approaches for evaluating transmission warming technology: experimental dynamometer testing and development of a simplified transmission efficiency model to quantify effects under varied real world ambient and driving conditions. Two vehicles were used for this investigation: a 2013 Ford Taurus and a 2011 Ford Fusion. The Taurus included a production transmission warming system and was tested over hot and cold ambient temperatures with the transmission warming system enabled and disabled. A robot driver was used to minimize driver variability and increase repeatability. Additionally the Fusion was tested cold and with the transmission pre-heated prior to completing the test cycles. These data were used to develop a simplified thermally responsive transmission model to estimate effects of transmission warming in real world conditions. For the Taurus, the fuel consumption variability within one standard deviation was shown to be under 0.5% for eight repeat Urban Dynamometer Driving Cycles (UDDS). These results were valid with the transmission warming system active or passive. Using the transmission warming system under 22 degrees C ambient temperature, fuel consumption reduction was shown to be 1.4%. For the Fusion, pre-warming the transmission reduced fuel consumption 2.5% for an urban drive cycle at -7 degrees C ambient temperature, with 1.5% of the 2.5% gain associated with the transmission, while consumption for the US06 test was shown to be reduced by 7% with 5.5% of the 7% gain associated with the transmission. It was found that engine warming due to conduction between the pre-heated transmission and the engine resulted in the remainder of the benefit. For +22 degrees C ambient tests, the pre-heated transmission was shown to reduce fuel consumption approximately 1% on an urban cycle, while no benefit was seen for the US06 cycle. The simplified modeling results showed gains in efficiency ranging from 0-1.5% depending on the ambient

  13. Effects of ambient conditions on fuel cell vehicle performance

    Science.gov (United States)

    Haraldsson, K.; Alvfors, P.

    Ambient conditions have considerable impact on the performance of fuel cell hybrid vehicles. Here, the vehicle fuel consumption, the air compressor power demand, the water management system and the heat loads of a fuel cell hybrid sport utility vehicle (SUV) were studied. The simulation results show that the vehicle fuel consumption increases with 10% when the altitude increases from 0 m up to 3000 m to 4.1 L gasoline equivalents/100 km over the New European Drive Cycle (NEDC). The increase is 19% on the more power demanding highway US06 cycle. The air compressor is the major contributor to this fuel consumption increase. Its load-following strategy makes its power demand increase with increasing altitude. Almost 40% of the net power output of the fuel cell system is consumed by the air compressor at the altitude of 3000 m with this load-following strategy and is thus more apparent in the high-power US06 cycle. Changes in ambient air temperature and relative humidity effect on the fuel cell system performance in terms of the water management rather in vehicle fuel consumption. Ambient air temperature and relative humidity have some impact on the vehicle performance mostly seen in the heat and water management of the fuel cell system. While the heat loads of the fuel cell system components vary significantly with increasing ambient temperature, the relative humidity did not have a great impact on the water balance. Overall, dimensioning the compressor and other system components to meet the fuel cell system requirements at the minimum and maximum expected ambient temperatures, in this case 5 and 40 °C, and high altitude, while simultaneously choosing a correct control strategy are important parameters for efficient vehicle power train management.

  14. Raman scattering in GaN, AlN and AlGaN. Basic material properties, processing and devices

    International Nuclear Information System (INIS)

    Hayes, J.M.

    2002-05-01

    GaN, AIN and AIGaN are very promising materials for high-power, high-temperature and high-frequency electronic device applications but many of their material properties and the effects of processing steps for device fabrication have not yet been fully investigated. AIGaN/GaN films were annealed at temperatures of 800 to 1300 deg C in different ambient atmospheres. The films were then analysed by micro-Raman spectroscopy. Compressive stress was found in films annealed in oxygen containing atmospheres which was significantly enhanced by the presence of water vapour in the annealing atmosphere. No stress was detected after annealing in nitrogen even at temperatures close to the thermal decomposition temperature and in the presence of water vapour. Thermal decomposition can be prevented by the use of high-pressure atmospheres during annealing. Mg/P implanted and non-implanted GaN films annealed at temperatures up to 1500 deg C with nitrogen over-pressures of 1-1.5 GPa were analysed by micro-Raman spectroscopy. Annealing temperatures of 1400-1500 deg C resulted in the nearly full recovery of the crystalline quality of the ion-implanted GaN. Ultraviolet Raman spectroscopy showed that no significant surface degradation occurred during the annealing. High-quality bulk AIN crystals were studied by micro-Raman spectroscopy. The pressure dependence of the phonon frequencies was measured in the range 0 GPa to 9.5 GPa determining the mode-Grueneisen parameters. The temperature dependence of the phonon frequencies and lifetimes was measured from 10 K to 1275 K. Empirical fitting and theoretical modelling of the temperature dependence was performed. The results have application for the monitoring of temperature in (Ga/AI)N. The E 2 (high) phonon frequency of GaN measured by micro-Raman spectroscopy was used to monitor local temperatures in active AIGaN/GaN hetero-structure field effect transistor devices (HFETs). The temperature rise in the active area of devices on sapphire

  15. Searches for Astrophysical and Cosmological Axions

    International Nuclear Information System (INIS)

    Asztalos, S J; Rosenberg, L J; van Bibber, K; Sikivie, P; Zioutas, K

    2006-01-01

    The axion remains, after nearly 30 years, the most compelling and elegant solution to the strong-CP problem, i.e. why this symmetry is protected in QCD in spite of CP violation elsewhere. The axion is expected to be extremely light, and possess extraordinarily feeble couplings to matter and radiation. Because of its small couplings, the axion has defied experimental confirmation and is unlikely to be discovered in conventional laboratory experiments (i.e. production-detection). Nevertheless, a sufficiently light axion would have been produced abundantly in the Big Bang and is an excellent candidate for the dark matter of the Universe. Through the axion's two-photon coupling, implying axion-photon mixing in an external electromagnetic field, galactic halo axions may be feasibly detected by their resonant conversion to RF photons in a microwave cavity permeated by magnetic field with current technology. Over the past decade experiments have already set interesting limits in mass and coupling; upgrades in progress to photon detection schemes at or below the standard quantum limit will soon enable definitive searches. Similarly, axions produced in the solar burning core might be detectable by their conversion to x-rays in a magnetic helioscope. Indeed current published limits already equal the best bounds on axion-photon coupling inferred from the concordance of stellar evolution models and observations, from horizontal branch stars. Significant improvements in both the mass range and sensitivity of the axion helioscope technique will be forthcoming in the next few years. This report will first summarize the theoretical background of the axion, and laboratory, astrophysical and cosmological limits on its mass and couplings. Cavity microwave searches for cosmic axions will then be reviewed, focusing on the current large-scale experiments (ADMX in the US; CARRACK in Japan), and their enabling technologies (HFET and SQUID amplifiers; Rydberg-atom single-quantum detection

  16. Evaluation of solid particle number and black carbon for very low particulate matter emissions standards in light-duty vehicles.

    Science.gov (United States)

    Chang, M-C Oliver; Shields, J Erin

    2017-06-01

    To reliably measure at the low particulate matter (PM) levels needed to meet California's Low Emission Vehicle (LEV III) 3- and 1-mg/mile particulate matter (PM) standards, various approaches other than gravimetric measurement have been suggested for testing purposes. In this work, a feasibility study of solid particle number (SPN, d50 = 23 nm) and black carbon (BC) as alternatives to gravimetric PM mass was conducted, based on the relationship of these two metrics to gravimetric PM mass, as well as the variability of each of these metrics. More than 150 Federal Test Procedure (FTP-75) or Supplemental Federal Test Procedure (US06) tests were conducted on 46 light-duty vehicles, including port-fuel-injected and direct-injected gasoline vehicles, as well as several light-duty diesel vehicles equipped with diesel particle filters (LDD/DPF). For FTP tests, emission variability of gravimetric PM mass was found to be slightly less than that of either SPN or BC, whereas the opposite was observed for US06 tests. Emission variability of PM mass for LDD/DPF was higher than that of both SPN and BC, primarily because of higher PM mass measurement uncertainties (background and precision) near or below 0.1 mg/mile. While strong correlations were observed from both SPN and BC to PM mass, the slopes are dependent on engine technologies and driving cycles, and the proportionality between the metrics can vary over the course of the test. Replacement of the LEV III PM mass emission standard with one other measurement metric may imperil the effectiveness of emission reduction, as a correlation-based relationship may evolve over future technologies for meeting stringent greenhouse standards. Solid particle number and black carbon were suggested in place of PM mass for the California LEV III 1-mg/mile FTP standard. Their equivalence, proportionality, and emission variability in comparison to PM mass, based on a large light-duty vehicle fleet examined, are dependent on engine

  17. Effect of Intake Air Filter Condition on Vehicle Fuel Economy

    Energy Technology Data Exchange (ETDEWEB)

    Norman, Kevin M [ORNL; Huff, Shean P [ORNL; West, Brian H [ORNL

    2009-02-01

    fuel economy with increasing restriction. However, the level of restriction required to cause a substantial (10-15%) decrease in fuel economy (such as that cited in the literature) was so severe that the vehicle was almost undrivable. Acceleration performance on all vehicles was improved with a clean air filter. Once it was determined how severe the restriction had to be to affect the carbureted vehicle fuel economy, the 2007 Buick Lucerne was retested in a similar manner. We were not able to achieve the level of restriction that was achieved with the 1972 Pontiac with the Lucerne. The Lucerne's air filter box would not hold the filter in place under such severe conditions. (It is believed that this testing exceeded the design limits of the air box.) Tests were conducted at a lower restriction level (although still considerably more severe than the initial clogged filter testing), allowing the air filter to stay seated in the air box, and no significant change was observed in the Lucerne's fuel economy or the AFR over the HFET cycle. Closed-loop control in modern fuel injected vehicle applications is sophisticated enough to keep a clogged air filter from affecting the vehicle fuel economy. However for older, open-loop, carbureted vehicles, a clogged air filter can affect the fuel economy. For the vehicle tested, the fuel economy with a new air filter improved as much as 14% over that with a severely clogged filter (in which the filter was so clogged that drivability was impacted). Under a more typical state of clog, the improvement with a new filter ranged from 2 to 6%.

  18. Rapid restoration of electric vehicle battery performance while driving at cold temperatures

    Science.gov (United States)

    Zhang, Guangsheng; Ge, Shanhai; Yang, Xiao-Guang; Leng, Yongjun; Marple, Dan; Wang, Chao-Yang

    2017-12-01

    Electric vehicles (EVs) driven in cold weather experience two major drawbacks of Li-ion batteries: drastic power loss (up to 10-fold at -30 °C) and restriction of regenerative braking at temperatures below 5-10 °C. Both factors greatly reduce cruise range, exacerbating drivers' range anxiety in winter. While preheating the battery before driving is a practice widely adopted to maintain battery power and EV drivability, it is time-consuming (on the order of 40 min) and prohibits instantaneous mobility. Here we reveal a control strategy that can rapidly restore EV battery power and permit full regeneration while driving at temperatures as low as -40 °C. The strategy involves heating the battery internally during regenerative braking and rest periods of driving. We show that this technique fully restores room-temperature battery power and regeneration in 13, 33, 46, 56 and 112 s into uninterrupted driving in 0, -10, -20, -30 and -40 °C environments, respectively. Correspondingly, the strategy significantly increases cruise range of a vehicle operated at cold temperatures, e.g. 49% at -40 °C in simulated US06 driving cycle tests. The present work suggests that smart batteries with embedded sensing/actuation can leapfrog in performance.

  19. Regenerative Braking Compensatory Control Strategy Considering CVT Power Loss for Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Yang Yang

    2018-02-01

    Full Text Available Hybrid electric vehicles (HEV equipped with continuously variable transmission (CVT adjust the motor operating point continuously to achieve the optimal motor operating efficiency during regenerative braking. Traditional control strategies consider the CVT efficiency as constant, while the CVT efficiency varies in different operating conditions. In order to reflect the transmission efficiency more accurately during regenerative braking, the CVT theoretical torque loss model is firstly established which then leads to the battery–front motor–CVT joint operating efficiency model. The joint operating efficiency model indicates that the system efficiency is influenced by input speed, input torque, CVT speed ratio, and battery SOC (state of charge. The compensatory strategy for the front motor barking force is proposed to make full use of its braking power and the CVT speed ratio control strategy is modified to maintain the optimal operating efficiency of the system. The simulations are performed under three typical braking conditions and UDDS, NYCC, US06 respectively, the results show that the modified control strategy increases the front motor braking power and improves the system operating efficiency.

  20. Electro-thermal analysis of Lithium Iron Phosphate battery for electric vehicles

    Science.gov (United States)

    Saw, L. H.; Somasundaram, K.; Ye, Y.; Tay, A. A. O.

    2014-03-01

    Lithium ion batteries offer an attractive solution for powering electric vehicles due to their relatively high specific energy and specific power, however, the temperature of the batteries greatly affects their performance as well as cycle life. In this work, an empirical equation characterizing the battery's electrical behavior is coupled with a lumped thermal model to analyze the electrical and thermal behavior of the 18650 Lithium Iron Phosphate cell. Under constant current discharging mode, the cell temperature increases with increasing charge/discharge rates. The dynamic behavior of the battery is also analyzed under a Simplified Federal Urban Driving Schedule and it is found that heat generated from the battery during this cycle is negligible. Simulation results are validated with experimental data. The validated single cell model is then extended to study the dynamic behavior of an electric vehicle battery pack. The modeling results predict that more heat is generated on an aggressive US06 driving cycle as compared to UDDS and HWFET cycle. An extensive thermal management system is needed for the electric vehicle battery pack especially during aggressive driving conditions to ensure that the cells are maintained within the desirable operating limits and temperature uniformity is achieved between the cells.

  1. Prediction of thermal behaviors of an air-cooled lithium-ion battery system for hybrid electric vehicles

    Science.gov (United States)

    Choi, Yong Seok; Kang, Dal Mo

    2014-12-01

    Thermal management has been one of the major issues in developing a lithium-ion (Li-ion) hybrid electric vehicle (HEV) battery system since the Li-ion battery is vulnerable to excessive heat load under abnormal or severe operational conditions. In this work, in order to design a suitable thermal management system, a simple modeling methodology describing thermal behavior of an air-cooled Li-ion battery system was proposed from vehicle components designer's point of view. A proposed mathematical model was constructed based on the battery's electrical and mechanical properties. Also, validation test results for the Li-ion battery system were presented. A pulse current duty and an adjusted US06 current cycle for a two-mode HEV system were used to validate the accuracy of the model prediction. Results showed that the present model can give good estimations for simulating convective heat transfer cooling during battery operation. The developed thermal model is useful in structuring the flow system and determining the appropriate cooling capacity for a specified design prerequisite of the battery system.

  2. A comparative study of three model-based algorithms for estimating state-of-charge of lithium-ion batteries under a new combined dynamic loading profile

    International Nuclear Information System (INIS)

    Yang, Fangfang; Xing, Yinjiao; Wang, Dong; Tsui, Kwok-Leung

    2016-01-01

    Highlights: • Three different model-based filtering algorithms for SOC estimation are compared. • A combined dynamic loading profile is proposed to evaluate the three algorithms. • Robustness against uncertainty of initial states of SOC estimators are investigated. • Battery capacity degradation is considered in SOC estimation. - Abstract: Accurate state-of-charge (SOC) estimation is critical for the safety and reliability of battery management systems in electric vehicles. Because SOC cannot be directly measured and SOC estimation is affected by many factors, such as ambient temperature, battery aging, and current rate, a robust SOC estimation approach is necessary to be developed so as to deal with time-varying and nonlinear battery systems. In this paper, three popular model-based filtering algorithms, including extended Kalman filter, unscented Kalman filter, and particle filter, are respectively used to estimate SOC and their performances regarding to tracking accuracy, computation time, robustness against uncertainty of initial values of SOC, and battery degradation, are compared. To evaluate the performances of these algorithms, a new combined dynamic loading profile composed of the dynamic stress test, the federal urban driving schedule and the US06 is proposed. The comparison results showed that the unscented Kalman filter is the most robust to different initial values of SOC, while the particle filter owns the fastest convergence ability when an initial guess of SOC is far from a true initial SOC.

  3. Catalyzed Diesel Particulate Filter Performance in a Light-Duty Vehicle

    International Nuclear Information System (INIS)

    Sluder, C.S.

    2001-01-01

    Light-duty chassis dynamometer driving cycle tests were conducted on a Mercedes A170 diesel vehicle with various sulfur-level fuels and exhaust emission control systems. Triplicate runs of a modified light-duty federal test procedure (FTP), US06 cycle, and SCO3 cycle were conducted with each exhaust configuration and fuel. Ultra-low sulfur (3-ppm) diesel fuel was doped to 30- and 150-ppm sulfur so that all other fuel properties remained the same. The fuels used in these experiments met the specifications of the fuels from the DECSE (Diesel Emission Control Sulfur Effects) program. Although the Mercedes A170 vehicle is not available in the US, its emissions in the as tested condition fell within the U.S. Tier 1 full useful life standards with the OEM catalysts installed. Tests with the OEM catalysts removed showed that the OEM catalysts reduced PM emissions from the engine-out condition by 30-40% but had negligible effects on NOx emissions. Fuel sulfur level had very little effect on th e OEM catalyst performance. A prototype catalyzed diesel particulate filter (CDPF) mounted in an underfloor configuration reduced particulate matter emissions by more than 90% compared to the factory emissions control system. The results show that the CDPF did not promote any significant amounts of SO(sub 2)-to-sulfate conversion during these light-duty drive cycles

  4. Model predictive control of a lean-burn gasoline engine coupled with a passive selective catalytic reduction system

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Pingen [Tennessee Technological University (TTU); Lin, Qinghua [Tennessee Technological University (TTU); Prikhodko, Vitaly Y. [ORNL

    2017-10-01

    Lean-burn gasoline engines have demonstrated 10–20% engine efficiency gain over stoichiometric engines and are widely considered as a promising technology for meeting the 54.5 miles-per-gallon (mpg) Corporate Average Fuel Economy standard by 2025. Nevertheless, NOx emissions control for lean-burn gasoline for meeting the stringent EPA Tier 3 emission standards has been one of the main challenges towards the commercialization of highly-efficient lean-burn gasoline engines in the United States. Passive selective catalytic reduction (SCR) systems, which consist of a three-way catalyst and SCR, have demonstrated great potentials of effectively reducing NOx emissions for lean gasoline engines but may cause significant fuel penalty due to ammonia generation via rich engine combustion. The purpose of this study is to develop a model-predictive control (MPC) scheme for a lean-burn gasoline engine coupled with a passive SCR system to minimize the fuel penalty associated with passive SCR operation while satisfying stringent NOx and NH3 emissions requirements. Simulation results demonstrate that the MPC-based control can reduce the fuel penalty by 47.7% in a simulated US06 cycle and 32.0% in a simulated UDDS cycle, compared to the baseline control, while achieving over 96% deNOx efficiency and less than 15 ppm tailpipe ammonia slip. The proposed MPC control can potentially enable high engine efficiency gain for highly-efficient lean-burn gasoline engine while meeting the stringent EPA Tier 3 emission standards.

  5. Black carbon emissions in gasoline vehicle exhaust: a measurement and instrument comparison.

    Science.gov (United States)

    Kamboures, Michael A; Hu, Shishan; Yu, Yong; Sandoval, Julia; Rieger, Paul; Huang, Shiou-Mei; Zhang, Sherry; Dzhema, Inna; Huo, Darey; Ayala, Alberto; Chang, M C Oliver

    2013-08-01

    A pilot study was conducted to evaluate the performance and agreement of several commercially available black carbon (BC) measurement instruments, when applied to the quantification of BC in light-duty vehicle (LDV) exhaust. Samples from six vehicles, three fuels, and three driving cycles were used. The pilot study included determinations of the method detection limit (MDL) and repeatability. With respect to the MDL, the real-time instruments outperformed the time-integrated instruments, with MDL = 0.12 mg/mi for the AE51 Aethalometer, and 0.15 mg/mi for the Micro Soot Sensor (MSS), versus 0.38 mg/mi for the IMPROVE_A thermal/ optical method, and 0.35 mg/mi for the OT21_T Optical Transmissometer. The real-time instruments had repeatability values ranging from 30% to 35%, which are somewhat better than those of the time-integrated instruments (40-41%). These results suggest that, despite being less resource intensive, real-time methods can be equivalent or superior to time-integrated methods in terms of sensitivity and repeatability. BC mass data, from the photoacoustic and light attenuation instruments, were compared against same-test EC data, determined using the IMPROVE_A method. The MSS BC data was well correlated with EC, with R2 = 0.85 for the composite results and R2 = 0.86 for the phase-by-phase (PBP) results. The correlation of BC, by the AE51, AE22, and OT21_T with EC was moderate to weak. The weaker correlation was driven by the inclusion of US06 test data in the linear regression analysis. We hypothesize that test-cycle-dependent BC:EC ratios are due to the different physicochemical properties of particulate matter (PM) in US06 and Federal Test Procedure (FTP) tests. Correlation amongst the real-time MSS, PASS-1, AE51, and AE22 instruments was excellent (R2 = 0.83-0.95), below 1 mg/mi levels. In the process of investigating these BC instruments, we learned that BC emissions at sub-1 mg/mi levels can be measured and are achievable by current

  6. Study on the economic and environmental benefits of different EV powertrain topologies

    International Nuclear Information System (INIS)

    Wang, Bin; Xu, Min; Yang, Li

    2014-01-01

    Highlights: • EV powertrain topologies can be realized by flexible distributed electric motors. • Model-based design optimization method is used to analyze and evaluate the EV. • The wheel-hub drive with reducer possesses the most competitive advantages. • US06 and NYCC result in the deterioration of EVs’ cost and GHG emissions. - Abstract: Numerous feasible schemes of powertrain topology can be designed for the electric vehicles (EVs) based on the distributed configurations of the electric motors. In this study, the effects of different EV powertrain topologies on the energy efficiency, vehicle ownership cost and lifecycle greenhouse gas (GHG) emissions of EVs are investigated. Energy-based vehicle simulation model including the regenerative braking function and battery degradation prediction method is established firstly. An optimization scheme combining the energy-based vehicle simulation model is conducted to minimize the electric energy consumption under various scenarios and driving conditions. Then the vehicle ownership cost and lifecycle GHG emissions of EVs are evaluated based on Chinese EV market and electricity grid. The sensitivity analyses of EV powertrain topology are implemented based on the different vehicle weights, CO 2 intensities of electricity and all-electric ranges. Results show that EVs using the powertrain of wheel-hub drive with the gear reducer have lower energy consumption. Furthermore, the driving cycles with more aggressive acceleration/deceleration and frequently stop-and-go conditions can increase both the vehicle ownership cost and lifecycle GHG emissions simultaneously. Chinese city traffic conditions will help EVs to obtain more benefits in respect of the economy and environment

  7. Influence of driving patterns on life cycle cost and emissions of hybrid and plug-in electric vehicle powertrains

    International Nuclear Information System (INIS)

    Karabasoglu, Orkun; Michalek, Jeremy

    2013-01-01

    We compare the potential of hybrid, extended-range plug-in hybrid, and battery electric vehicles to reduce lifetime cost and life cycle greenhouse gas emissions under various scenarios and simulated driving conditions. We find that driving conditions affect economic and environmental benefits of electrified vehicles substantially: Under the urban NYC driving cycle, hybrid and plug-in vehicles can cut life cycle emissions by 60% and reduce costs up to 20% relative to conventional vehicles (CVs). In contrast, under highway test conditions (HWFET) electrified vehicles offer marginal emissions reductions at higher costs. NYC conditions with frequent stops triple life cycle emissions and increase costs of conventional vehicles by 30%, while aggressive driving (US06) reduces the all-electric range of plug-in vehicles by up to 45% compared to milder test cycles (like HWFET). Vehicle window stickers, fuel economy standards, and life cycle studies using average lab-test vehicle efficiency estimates are therefore incomplete: (1) driver heterogeneity matters, and efforts to encourage adoption of hybrid and plug-in vehicles will have greater impact if targeted to urban drivers vs. highway drivers; and (2) electrified vehicles perform better on some drive cycles than others, so non-representative tests can bias consumer perception and regulation of alternative technologies. We discuss policy implications. - Highlights: • Electrified vehicle life cycle emissions and cost depend on driving conditions. • GHGs can triple in NYC conditions vs. highway (HWFET), cost +30%. • Under NYC conditions hybrid and plug-in vehicles cut GHGs up to 60%, cost 20%. • Under HWFET conditions they offer few GHG reductions at higher costs. • Federal tests for window labels and CAFE standards favor some technologies over others

  8. Lower-Energy Energy Storage System (LEESS) Component Evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Gonder, J.; Cosgrove, J.; Shi, Y.; Saxon, A.; Pesaran, A.

    2014-10-01

    Alternate hybrid electric vehicle (HEV) energy storage systems (ESS) such as lithium-ion capacitors (LICs) and electrochemical double-layer capacitor (EDLC) modules have the potential for improved life, superior cold temperature performance, and lower long-term cost projections relative to traditional battery storage systems. If such lower-energy ESS (LEESS) devices can also be shown to maintain high HEV fuel savings, future HEVs designed with these devices could have an increased value proposition relative to conventional vehicles. NREL's vehicle test platform is helping validate the in-vehicle performance capability of alternative LEESS devices and identify unforeseen issues. NREL created the Ford Fusion Hybrid test platform for in-vehicle evaluation of such alternative LEESS devices, bench testing of the initial LIC pack, integration and testing of the LIC pack in the test vehicle, and bench testing and installation of an EDLC module pack. EDLC pack testing will continue in FY15. The in-vehicle LIC testing results suggest technical viability of LEESS devices to support HEV operation. Several LIC configurations tested demonstrated equivalent fuel economy and acceleration performance as the production nickel-metal-hydride ESS configuration across all tests conducted. The lowest energy LIC scenario demonstrated equivalent performance over several tests, although slightly higher fuel consumption on the US06 cycle and slightly slower acceleration performance. More extensive vehicle-level calibration may be able to reduce or eliminate these performance differences. The overall results indicate that as long as critical attributes such as engine start under worst case conditions can be retained, considerable ESS downsizing may minimally impact HEV fuel savings.

  9. Effect of ethanol fuel additive on diesel emissions.; TOPICAL

    International Nuclear Information System (INIS)

    Cole, R. L.; Poola, R. B.; Sekar, R.; Schaus, J. E.; McPartlin, P.

    2001-01-01

    Engine-out emissions from a Volkswagen model TDI engine were measured for three different fuels: neat diesel fuel, a blend of diesel fuel and additives containing 10% ethanol, and a blend of diesel fuel and additives containing 15% ethanol. The test matrix covered five speeds from 1,320 to 3,000 rpm, five torques from 15 Nm to maximum plus the 900-rpm idle condition, and most of the points in the FTP-75 and US-06 vehicle tests. Emissions of particulate matter (PM), nitrogen oxides (NO(sub x)), unburned hydrocarbons (HCs), and carbon monoxide (CO) were measured at each point, as were fuel consumption, exhaust oxygen, and carbon dioxide output. PM emissions were reduced up to 75% when ethanol-diesel blends were used instead of neat diesel fuel. Significant reductions in PM emissions occurred over one-half to two-thirds of the test matrix. NO(sub x) emissions were reduced by up to 84%. Although the regions of reduced NO(sub x) emissions were much smaller than the regions of reduced PM emissions, there was considerable overlap between the two regions where PM emissions were reduced by up to 75% and NO(sub x) emissions were reduced by up to 84%. Such simultaneous reduction of both PM and NO(sub x) emissions would be difficult to achieve by any other means. HC and CO emissions were also reduced in the regions of reduced PM and NO(sub x) emissions that overlapped. Because the ethanol-diesel blends contain less energy on both a per-unit-mass basis and a per-unit-volume basis, there was a reduction in maximum torque of up to 10% and an increase in brake-specific fuel consumption of up to 7% when these blends were used

  10. EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

    Science.gov (United States)

    Han, Jung; Kneissl, Michael

    2012-02-01

    -nitride-based laser diodes is compared. Leung et al discuss the optical emission characteristics of semipolar (1122) GaN light-emitting diodes on m-sapphire and stripe-etched r-sapphire, and Jung et al present results on high brightness non-polar a-plane GaN light-emitting diodes. Finally, in a review Konar et al discuss the charge transport in non- and semipolar III-V nitride heterostructures, and Ishida et al present the latest results on non-polar AlGaN/GaN HFETs with a normally-off operation. Overall, we think that this special issue of Semiconductor Science and Technology provides a comprehensive overview of the state-of-the-art in the field on non-polar and semipolar nitride materials and devices. In view of the rapidly growing interest in this field, the demonstrated enhanced device performance and the wide range of applications, this special issue can be considered a very timely contribution. Finally, we would like to thank the IOP editorial staff, in particular Jarlath McKenna, for their support, and we would also like to thank all contributors for their efforts in making this special issue possible.

  11. Effects of High Octane Ethanol Blends on Four Legacy Flex-Fuel Vehicles, and a Turbocharged GDI Vehicle

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, John F [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); West, Brian H [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Huff, Shean P [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-03-01

    improvement was measured for this vehicle, which achieved near volumetric fuel economy parity on the aggressive US06 drive cycle, demonstrating the potential for improved fuel economy in forthcoming downsized, downsped engines with high-octane fuels.

  12. Comparison of real-world and certification emission rates for light duty gasoline vehicles.

    Science.gov (United States)

    Khan, Tanzila; Frey, H Christopher

    2018-05-01

    significantly higher than or significantly not different from the CLs, with the exception of CO on the US06 cycle, for which real-world rates are lower than CLs. Compared to the emission standards, hot stabilized CAERs are on average significantly lower. However, comparisons of CAERs and standards are sensitive to cold start emissions. For some combinations of pollutants and vehicle groups, cold start inclusive CAERs are higher than the corresponding CLs and as high as the standards. The CLs, which are based on standard driving cycles, tend to underestimate real-world emission rates. Therefore, emission inventory estimates using certification test results are potentially underestimated. Copyright © 2017 Elsevier B.V. All rights reserved.