Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

Science.gov (United States)

Held, J.; Gaspar, J.; Ruther, P.; Hagner, M.; Cismak, A.; Heilmann, A.; Paul, O.

2010-02-01

This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

International Nuclear Information System (INIS)

Held, J; Gaspar, J; Ruther, P; Paul, O; Hagner, M; Cismak, A; Heilmann, A

2010-01-01

This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

Cross Sections for Electron-Impact Dissociation of Alternative Etching Gas, C3HF7O

Science.gov (United States)

Tanaka, Hideyuki; Toyoda, Hirotaka; Sugai, Hideo

1998-09-01

The search for alternative for perfluorocarbon gases from the environmental point of view has resulted in a new etching gas, C3HF7O (1,2,2,2-tetrafluoroethyl-trifluoromethyl ether, abbreviated as HFE-227). In this paper, the first measurement of the absolute cross sections for the dissociation of HFE-227, is reported.The neutral dissociation is measured from the threshold to 250 eV by appearance mass spectrometry in a dual electron beam device.The threshold energies for the neutral dissociation into CF, CF2 and CF3 are 14.7, 12.5 and 11.2 eV, respectively.The cross sections for the dissociation from HFE-227 into CF3 and CF are larger than those from c-C4F8 (octafluorocyclobutane), but not for the dissociation into CF2.Besides the neutral dissociation, the cross sections for the dissociative ionization of HFE-227 are extensively measured for the formation of twelve ionic species, i.e., CO+, CHO+, CF+, CHF+, CFO+, CF2+, CHF2+, CF3+, CHF3+, C2HF2O+, C2HF4+ and C2HF4O+.

WO3 and W Thermal Atomic Layer Etching Using "Conversion-Fluorination" and "Oxidation-Conversion-Fluorination" Mechanisms.

Science.gov (United States)

Johnson, Nicholas R; George, Steven M

2017-10-04

The thermal atomic layer etching (ALE) of WO 3 and W was demonstrated with new "conversion-fluorination" and "oxidation-conversion-fluorination" etching mechanisms. Both of these mechanisms are based on sequential, self-limiting reactions. WO 3 ALE was achieved by a "conversion-fluorination" mechanism using an AB exposure sequence with boron trichloride (BCl 3 ) and hydrogen fluoride (HF). BCl 3 converts the WO 3 surface to a B 2 O 3 layer while forming volatile WO x Cl y products. Subsequently, HF spontaneously etches the B 2 O 3 layer producing volatile BF 3 and H 2 O products. In situ spectroscopic ellipsometry (SE) studies determined that the BCl 3 and HF reactions were self-limiting versus exposure. The WO 3 ALE etch rates increased with temperature from 0.55 Å/cycle at 128 °C to 4.19 Å/cycle at 207 °C. W served as an etch stop because BCl 3 and HF could not etch the underlying W film. W ALE was performed using a three-step "oxidation-conversion-fluorination" mechanism. In this ABC exposure sequence, the W surface is first oxidized to a WO 3 layer using O 2 /O 3 . Subsequently, the WO 3 layer is etched with BCl 3 and HF. SE could simultaneously monitor the W and WO 3 thicknesses and conversion of W to WO 3 . SE measurements showed that the W film thickness decreased linearly with number of ABC reaction cycles. W ALE was shown to be self-limiting with respect to each reaction in the ABC process. The etch rate for W ALE was ∼2.5 Å/cycle at 207 °C. An oxide thickness of ∼20 Å remained after W ALE, but could be removed by sequential BCl 3 and HF exposures without affecting the W layer. These new etching mechanisms will enable the thermal ALE of a variety of additional metal materials including those that have volatile metal fluorides.

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Effect of surface acid etching on the biaxial flexural strength of two hot-pressed glass ceramics.

Science.gov (United States)

Hooshmand, Tabassom; Parvizi, Shaghayegh; Keshvad, Alireza

2008-07-01

The purpose of this study was to assess the effect of surface acid etching on the biaxial flexural strength of two hot-pressed glass ceramics reinforced by leucite or lithium disilicate crystals. Forty glass ceramic disks (14-mm diameter, 2-mm thick) consisting of 20 leucite-based ceramic disks (IPS Empress) and 20 lithia disilicate-based ceramic (IPS Empress 2) were produced by hot-pressing technique. All specimens were polished and then cleaned ultrasonically in distilled water. Ten specimens of each ceramic group were then etched with 9% hydrofluoric (HF) acid gel for 2 minutes and cleaned ultrasonically again. The biaxial flexural strength was measured by the piston-on-three-ball test in a universal testing machine. Data based on ten specimens in each group were analyzed by two-way ANOVA (alpha= 0.05). Microstructure of ceramic surfaces before and after acid etching was also examined by a scanning electron microscope. The mean biaxial flexural strength values for each group tested were (in MPa): nonetched IPS Empress = 118.6 +/- 25.5; etched IPS Empress = 102.9 +/- 15.4; nonetched IPS Empress 2 = 283.0 +/- 48.5; and etched IPS Empress 2 = 250.6 +/- 34.6. The results showed that the etching process reduced the biaxial flexural strengths significantly for both ceramic types (p= 0.025). No significant interaction between the ceramic type and etching process was found (p= 0.407). From the results, it was concluded that surface HF acid etching could have a weakening effect on hot-pressed leucite or lithia disilicate-based glass ceramic systems.

Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

Energy Technology Data Exchange (ETDEWEB)

Montesdeoca-Santana, A. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen, Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Departamento de Energia Fotovoltaica, Instituto Tecnologico y de Energias Renovables. Poligono Industrial de Granadilla s/n, 38600 San Isidro-Granadilla de Abona (Spain); Jimenez-Rodriguez, E. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Ziegler, J. [Fraunhofer Institute for Solar Energy Systems, Laboratory- and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Velazquez, J.J. [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna. Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Hohage, S.; Borchert, D. [Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Guerrero-Lemus, R., E-mail: rglemus@ull.es [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain)

2011-11-15

Highlights: > An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO{sub 3} stain etching to texture the surface. > FTIR analysis shows no influence of oxide passivation in this effect. > SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. > LBIC images show a reduction in IQE at extended defects in HF/HNO{sub 3} textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO{sub 3} solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

International Nuclear Information System (INIS)

Montesdeoca-Santana, A.; Gonzalez-Diaz, B.; Jimenez-Rodriguez, E.; Ziegler, J.; Velazquez, J.J.; Hohage, S.; Borchert, D.; Guerrero-Lemus, R.

2011-01-01

Highlights: → An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO 3 stain etching to texture the surface. → FTIR analysis shows no influence of oxide passivation in this effect. → SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. → LBIC images show a reduction in IQE at extended defects in HF/HNO 3 textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO 3 solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

Science.gov (United States)

Han, Kefeng; Zhu, Lin

2017-09-01

In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the {{{Al}}}0.28{{{Ga}}}0.72{{N}} barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm-1, the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

Science.gov (United States)

Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Etching conditions and shape of tracks

International Nuclear Information System (INIS)

Kudo, Shuichi

1979-01-01

The etching effect of hydrogen fluoride (HF) solution of 5%, 10%, 20% and 46% was investigated, using the perlite dug out at Wada-toge, Japan. They were studied by the progressive etching at 30 deg C, after the perlite was subjected to thermal neutron irradiation for 8 hours in the research reactor of the Institute for Atomic Energy of St. Paul (Rikkyo) University. Observation was performed mainly by replica, and false tracks, which are difficult to be judged whether they are the tracks or not, didn't appear as far as this experiment was concerned. Measurements of etch-pits and track density were carried out. The results of these investigations were considered and analyzed to describe them in five sections. The conclusions are as follows: (1) Regarding the ease of etch-pit observation and the adjustment of etching time, etching with 5% HF solution is most advantageous among four solutions of 5, 10, 20 and 46% HF. (2) The measurement of track density is more affected by the difference in counting criteria than the difference in etching conditions. The data on the size of etch-pits are required to discuss the problems of track density and counting efficiency. (3) If linear tracks are to be observed using hydrogen fluoride, it is necessary to investigate the etching characteristics with the solution of lower concentration. (Wakatsuki, Y.)

Adiabatic tapered optical fiber fabrication in two step etching

Science.gov (United States)

Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

2016-01-01

A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

Effect of etching with distinct hydrofluoric acid concentrations on the flexural strength of a lithium disilicate-based glass ceramic.

Science.gov (United States)

Prochnow, Catina; Venturini, Andressa B; Grasel, Rafaella; Bottino, Marco C; Valandro, Luiz Felipe

2017-05-01

This study examined the effects of distinct hydrofluoric acid concentrations on the mechanical behavior of a lithium disilicate-based glass ceramic. Bar-shaped specimens were produced from ceramic blocks (e.max CAD, Ivoclar Vivadent). The specimens were polished, chamfered, and sonically cleaned in distilled water. The specimens were randomly divided into five groups (n = 23). The HF1, HF3, HF5, and HF10 specimens were etched for 20 s with acid concentrations of 1%, 3%, 5%, and 10%, respectively, while the SC (control) sample was untreated. The etched surfaces were evaluated using a scanning electron microscope and an atomic force microscope. Finally, the roughness was measured, and 3-point bending flexural tests were performed. The data were analyzed using one-way analysis of variance (ANOVA) and Tukey's test (α = 0.05). The Weibull modulus and characteristic strength were also determined. No statistical difference in the roughness and flexural strength was determined among the groups. The structural reliabilities (Weilbull moduli) were similar for the tested groups; however, the characteristic strength of the HF1 specimen was greater than that of the HF10 specimen. Compared with the untreated ceramic, the surface roughness and flexural strength of the ceramic were unaffected upon etching, regardless of the acid concentration. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 105B: 885-891, 2017. © 2016 Wiley Periodicals, Inc.

Dry etch challenges for CD shrinkage in memory process

Science.gov (United States)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

Science.gov (United States)

Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

2012-05-01

A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

International Nuclear Information System (INIS)

Aydemir, A; Akin, T

2012-01-01

In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

GPU based 3D feature profile simulation of high-aspect ratio contact hole etch process under fluorocarbon plasmas

Science.gov (United States)

Chun, Poo-Reum; Lee, Se-Ah; Yook, Yeong-Geun; Choi, Kwang-Sung; Cho, Deog-Geun; Yu, Dong-Hun; Chang, Won-Seok; Kwon, Deuk-Chul; Im, Yeon-Ho

2013-09-01

Although plasma etch profile simulation has been attracted much interest for developing reliable plasma etching, there still exist big gaps between current research status and predictable modeling due to the inherent complexity of plasma process. As an effort to address this issue, we present 3D feature profile simulation coupled with well-defined plasma-surface kinetic model for silicon dioxide etching process under fluorocarbon plasmas. To capture the realistic plasma surface reaction behaviors, a polymer layer based surface kinetic model was proposed to consider the simultaneous polymer deposition and oxide etching. Finally, the realistic plasma surface model was used for calculation of speed function for 3D topology simulation, which consists of multiple level set based moving algorithm, and ballistic transport module. In addition, the time consumable computations in the ballistic transport calculation were improved drastically by GPU based numerical computation, leading to the real time computation. Finally, we demonstrated that the surface kinetic model could be coupled successfully for 3D etch profile simulations in high-aspect ratio contact hole plasma etching.

Influence of Etching Protocol and Silane Treatment with a Universal Adhesive on Lithium Disilicate Bond Strength.

Science.gov (United States)

Kalavacharla, V K; Lawson, N C; Ramp, L C; Burgess, J O

2015-01-01

To measure the effects of hydrofluoric acid (HF) etching and silane prior to the application of a universal adhesive on the bond strength between lithium disilicate and a resin. Sixty blocks of lithium disilicate (e.max CAD, Ivoclar Vivadent) were sectioned into coupons and polished. Specimens were divided into six groups (n=10) based on surface pretreatments, as follows: 1) no treatment (control); 2) 5% HF etch for 20 seconds (5HF); 3) 9.5% HF etch for 60 seconds (9.5HF); 4) silane with no HF (S); 5) 5% HF for 20 seconds + silane (5HFS); and 6) 9.5% HF for 60 seconds + silane (9.5HFS). All etching was followed by rinsing, and all silane was applied in one coat for 20 seconds and then dried. The universal adhesive (Scotchbond Universal, 3M ESPE) was applied onto the pretreated ceramic surface, air thinned, and light cured for 10 seconds. A 1.5-mm-diameter plastic tube filled with Z100 composite (3M ESPE) was applied over the bonded ceramic surface and light cured for 20 seconds on all four sides. The specimens were thermocycled for 10,000 cycles (5°C-50°C/15 s dwell time). Specimens were loaded until failure using a universal testing machine at a crosshead speed of 1 mm/min. The peak failure load was used to calculate the shear bond strength. Scanning electron microscopy images were taken of representative e.max specimens from each group. A two-way analysis of variance (ANOVA) determined that there were significant differences between HF etching, silane treatment, and the interaction between HF and silane treatment (puniversal adhesive.

Directional Etching of Silicon by Silver Nanostructures

Science.gov (United States)

Sharma, Pradeep; Wang, Yuh-Lin

2011-02-01

We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

Pulsed high-density plasmas for advanced dry etching processes

International Nuclear Information System (INIS)

Banna, Samer; Agarwal, Ankur; Cunge, Gilles; Darnon, Maxime; Pargon, Erwine; Joubert, Olivier

2012-01-01

Plasma etching processes at the 22 nm technology node and below will have to satisfy multiple stringent scaling requirements of microelectronics fabrication. To satisfy these requirements simultaneously, significant improvements in controlling key plasma parameters are essential. Pulsed plasmas exhibit considerable potential to meet the majority of the scaling challenges, while leveraging the broad expertise developed over the years in conventional continuous wave plasma processing. Comprehending the underlying physics and etching mechanisms in pulsed plasma operation is, however, a complex undertaking; hence the full potential of this strategy has not yet been realized. In this review paper, we first address the general potential of pulsed plasmas for plasma etching processes followed by the dynamics of pulsed plasmas in conventional high-density plasma reactors. The authors reviewed more than 30 years of academic research on pulsed plasmas for microelectronics processing, primarily for silicon and conductor etch applications, highlighting the potential benefits to date and challenges in extending the technology for mass-production. Schemes such as source pulsing, bias pulsing, synchronous pulsing, and others in conventional high-density plasma reactors used in the semiconductor industry have demonstrated greater flexibility in controlling critical plasma parameters such as ion and radical densities, ion energies, and electron temperature. Specifically, plasma pulsing allows for independent control of ion flux and neutral radicals flux to the wafer, which is key to eliminating several feature profile distortions at the nanometer scale. However, such flexibility might also introduce some difficulty in developing new etching processes based on pulsed plasmas. Therefore, the main characteristics of continuous wave plasmas and different pulsing schemes are compared to provide guidelines for implementing different schemes in advanced plasma etching processes based on

Roles of Ag in fabricating Si nanowires by the electroless chemical etching technique

International Nuclear Information System (INIS)

Wan, X.; Wang, Q. K.; Wangyang, P. H.; Tao, H.

2012-01-01

Silicon wafers coated with a film of Ag pattern are used for investigating roles of Ag in the fabrication of silicon nanowire arrays (SiNWs) by the electroless chemical etching technique. The diameter of SiNWs grown in the mixed AgNO 3 /HF solution ranges from 20 to 250 nm. A growth mechanism for such obtained SiNWs is proposed and further experimentally verified. As a comparison as well as to better understand this chemical process, another popular topic on growing SiNWs in the H 2 O 2 /HF solution is also studied. Originating from different chemical reaction mechanisms, Ag film could protect the underneath Si in the AgNO 3 /HF solution and it could, on the contrary, accelerate etching of the underneath Si in the H 2 O 2 /HF solution.

Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

International Nuclear Information System (INIS)

Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

2009-01-01

This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

OpenAIRE

Ajay Kumar; Dr. Pramod Kumar

2014-01-01

This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF) optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that th...

Process margin enhancement for 0.25-μm metal etch process

Science.gov (United States)

Lee, Chung Y.; Ma, Wei Wen; Lim, Eng H.; Cheng, Alex T.; Joy, Raymond; Ross, Matthew F.; Wong, Selmer S.; Marlowe, Trey

2000-06-01

This study evaluates electron beam stabilization of UV6, a positive tone Deep-UV (DUV) resist from Shipley, for a 0.25 micrometer metal etch application. Results are compared between untreated resist and resist treated with different levels of electron beam stabilization. The electron beam processing was carried out in an ElectronCureTM flood electron beam exposure system from Honeywell International Inc., Electron Vision. The ElectronCureTM system utilizes a flood electron beam source which is larger in diameter than the substrate being processed, and is capable of variable energy so that the electron range is matched to the resist film thickness. Changes in the UV6 resist material as a result of the electron beam stabilization are monitored via spectroscopic ellipsometry for film thickness and index of refraction changes and FTIR for analysis of chemical changes. Thermal flow stability is evaluated by applying hot plate bakes of 150 degrees Celsius and 200 degrees Celsius, to patterned resist wafers with no treatment and with an electron beam dose level of 2000 (mu) C/cm2. A significant improvement in the thermal flow stability of the patterned UV6 resist features is achieved with the electron beam stabilization process. Etch process performance of the UV6 resist was evaluated by performing a metal pattern transfer process on wafers with untreated resist and comparing these with etch results on wafers with different levels of electron beam stabilization. The etch processing was carried out in an Applied Materials reactor with an etch chemistry including BCl3 and Cl2. All wafers were etched under the same conditions and the resist was treated after etch to prevent further erosion after etch but before SEM analysis. Post metal etch SEM cross-sections show the enhancement in etch resistance provided by the electron beam stabilization process. Enhanced process margin is achieved as a result of the improved etch resistance, and is observed in reduced resist side

Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

International Nuclear Information System (INIS)

Ashby, C.I.H.; Myers, D.R.

1992-01-01

This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

Effect of Hydrofluoric Acid Etching Time on Titanium Topography, Chemistry, Wettability, and Cell Adhesion.

Directory of Open Access Journals (Sweden)

R Zahran

Full Text Available Titanium implant surface etching has proven an effective method to enhance cell attachment. Despite the frequent use of hydrofluoric (HF acid, many questions remain unresolved, including the optimal etching time and its effect on surface and biological properties. The objective of this study was to investigate the effect of HF acid etching time on Ti topography, surface chemistry, wettability, and cell adhesion. These data are useful to design improved acid treatment and obtain an improved cell response. The surface topography, chemistry, dynamic wetting, and cell adhesiveness of polished Ti surfaces were evaluated after treatment with HF acid solution for 0, 2; 3, 5, 7, or 10 min, revealing a time-dependent effect of HF acid on their topography, chemistry, and wetting. Roughness and wetting increased with longer etching time except at 10 min, when roughness increased but wetness decreased. Skewness became negative after etching and kurtosis tended to 3 with longer etching time. Highest cell adhesion was achieved after 5-7 min of etching time. Wetting and cell adhesion were reduced on the highly rough surfaces obtained after 10-min etching time.

Wet chemical etching of Al-doped ZnO film deposited by RF magnetron sputtering method on textured glass substrate for energy application

Energy Technology Data Exchange (ETDEWEB)

Hwang, Ki Hwan; Nam, Sang Hun; Jung, Won Suk; Lee, Yong Min; Yang, Hee Su; Boo, Jin Hyo [Dept. of Chemistry, Sungkyunkwan University, Suwon (Korea, Republic of)

2015-03-15

The etching of glasses in aqueous hydrofluoric acid (HF) solutions is applied in many technological fields. Particularly, the textured transparent conductive oxide materials on the glass substrate etched by HF were used to improve the current density of solar cells. In this study, the textured glass substrate has been etched by solution and the Al-doped ZnO (AZO) thin films have been prepared on this textured glass substrates by RF magnetron sputtering method. After the AZO film deposition, the surface of AZO has been etched by hydrochloric acid with different concentration and etching time. Etched AZO thin films had higher haze ratio and sheet resistance than bare AZO glass. Increases in the root-mean-square surface roughness of AZO films enhanced from 53.78 to 84.46 nm the haze ratio in above 700 nm wavelength. Our process could be applicable in texturing glass and etching AZO surface to fabricate solar cell in industrial scale. We also carried out fabricating an organic solar-cell device. Energy conversion efficiency improvement of 123% was obtained with textured AZO-based solar-cell device compared with that of nontextured solar-cell device.

Process for etching zirconium metallic objects

International Nuclear Information System (INIS)

Panson, A.J.

1988-01-01

In a process for etching of zirconium metallic articles formed from zirconium or a zirconium alloy, wherein the zirconium metallic article is contacted with an aqueous hydrofluoric acid-nitric acid etching bath having an initial ratio of hydrofluoric acid to nitric acid and an initial concentration of hydrofluoric and nitric acids, the improvement, is described comprising: after etching of zirconium metallic articles in the bath for a period of time such that the etching rate has diminished from an initial rate to a lesser rate, adding hydrofluoric acid and nitric acid to the exhausted bath to adjust the concentration and ratio of hydrofluoric acid to nitric acid therein to a value substantially that of the initial concentration and ratio and thereby regenerate the etching solution without removal of dissolved zirconium therefrom; and etching further zirconium metallic articles in the regenerated etching bath

Method of plasma etching Ga-based compound semiconductors

Science.gov (United States)

Qiu, Weibin; Goddard, Lynford L.

2012-12-25

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

KAUST Repository

Najar, Adel

2012-01-01

We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.

Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

Directory of Open Access Journals (Sweden)

Pushpendra Kumar

2007-01-01

Full Text Available The most common fabrication technique of porous silicon (PS is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

Effect of three porcelain etchants type (HF-APF-PHA on porcelain- composite shear bond strength

Directory of Open Access Journals (Sweden)

Kermanshah H.

2005-05-01

Full Text Available Statement of Problem: Porcelain restorations are susceptible to fracture and a common method for repairing is the use of silane and composite on etched porcelain. Although HF is very effective in porcelain etching but has detrimental effects on tissues. Purpose: In this study, the effect of APF and PHA was compared with HF in porcelain etching. Also the role of silane, unfilled resin and dentin bonding in bond strength of composite- porcelain was evaluated. Methods and Materials: In this experimental in-vitro study, one-hundred twenty porcelain square blocks (552 mm were prepared and bonding surfaces of each sandblasted. Samples were divided into three groups. The first group (n=40 were etched with buffered HF 9.5% (Ultradent for 1 min., the second group (n=40 were etched with Iranian APF 1.23% (Kimia for 10 minutes and the third group (n=40 were etched with Iranian PHA 37% (Kimia for 1 min. Ultradent silane was applied on the surfaces of half of cases in each group. On the surfaces of half of silane-treated samples unfilled resin was applied and dentin bonding was used on the surfaces of the remaining. Samples without silane were treated in a similar manner. Composite cylinder with 4mm diameter and 2 mm height was bonded to porcelain. Specimens were stored in 37°C distilled water for 24 hours and subjected to 500 cycles. Shear bond strength was measured with an Instron machine and type of fracture was evaluated using a stereomicroscope. Results were analyzed using 3 way ANOVA, Kaplan- Maier and Tukey HSD tests. Results: Findings showed that PHA and APF roughened the porcelain surface without creating retentive micro undercuts but HF etches porcelain and creates retentive microundercuts. Ultradent silane had no significant effect on bond strength of porcelain- composite. Unfilled resin with Ultradent silane compared with dentin bonding with the same silane is more effective in bond strength of composite- porcelain. Conclusion: Based on

SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

Science.gov (United States)

Yongliang, Li; Qiuxia, Xu

2009-12-01

Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

HF/H2O2 treated graphite felt as the positive electrode for vanadium redox flow battery

Science.gov (United States)

He, Zhangxing; Jiang, Yingqiao; Meng, Wei; Jiang, Fengyun; Zhou, Huizhu; Li, Yuehua; Zhu, Jing; Wang, Ling; Dai, Lei

2017-11-01

In order to improve the electrochemical performance of the positive graphite felt electrode in vanadium flow redox battery, a novel method is developed to effectively modify the graphite felt by combination of etching of HF and oxidation of H2O2. After the etching of HF for the graphite felt at ambient temperature, abundant oxygen-containing functional groups were further introduced on the surface of graphite felt by hydrothermal treatment using H2O2 as oxidant. Benefiting from the surface etching and introduction of functional groups, mass transfer and electrode process can be improved significantly on the surface of graphite felt. VO2+/VO2+ redox reaction on the graphite felt modified by HF and H2O2 jointly (denote: GF-HF/H2O2) exhibits superior electrochemical kinetics in comparison with the graphite felt modified by single HF or H2O2 treatment. The cell using GF-HF/H2O2 as the positive electrode was assembled and its electrochemical properties were evaluated. The increase of energy efficiency of 4.1% for GF-HF/H2O2 at a current density of 50 mA cm-2 was obtained compared with the pristine graphite felt. The cell using GF-HF/H2O2 also demonstrated higher discharge capacity. Our study revealed that HF/H2O2 treatment is an efficient method to enhance the electrochemical performance of graphite felt, further improving the comprehensive energy storage performance of the vanadium flow redox battery.

Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

Science.gov (United States)

Zamani, Davoud

ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources

Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching

International Nuclear Information System (INIS)

Gao Yanjun; Duanmu Qingduo; Wang Guozheng; Li Ye; Tian Jingquan

2009-01-01

A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3 μm and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.

Comparative study of resist stabilization techniques for metal etch processing

Science.gov (United States)

Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

1999-06-01

This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

Beta decomposition processes in Hf-rich Hf--Nb alloys

International Nuclear Information System (INIS)

Jones, W.B.; Taggart, R.; Polonis, D.H.

1978-01-01

The decomposition of the bcc β-phase by both athermal and isothermal processes has been investigated in Hf-rich Hf--Nb alloys. An all β-phase structure is retained in chill-cast alloys containing 30 to 50 at.% Nb (Cb), although electron diffraction streaking effects and the behavior of the temperature coefficient of electrical resistivity indicate the presence of a bcc lattice instability similar to that reported in solute lean Ti and Zr alloys. Aging a Hf 0 . 65 Nb 0 . 35 alloy at 400 and 600 0 C resulted in the direct precipitation of a fine dispersion of α-phase needles; this morphology differs from the discs of transition α (α/sub t/) which Carpenter et al observed in Nb-rich Nb 0 . 68 Hf 0 . 32 . During continued aging, the needles grow selectively to form colonies or groups of needles in which both the individual needles and the groups of needles have major axes aligned along (110)/sub β/ type directions. The initial α-phase particles exhibit the Burgers orientation relationship with the parent matrix; continued aging changes the electron diffraction patterns in a way that is similar to that observed in aged Ti--Mo and Ti--Mo--Al alloys where they were attributed to the α-phase having a different crystallographic relationship to the β-phase (Type 2 α-phase). The observed changes in the electron diffraction patterns of aged Hf 0 . 65 Nb 0 . 35 cannot be described as resulting from strained Burgers α-phase

Step voltage with periodic hold-up etching: A novel porous silicon formation

International Nuclear Information System (INIS)

Naddaf, M.; Awad, F.; Soukeih, M.

2007-01-01

A novel etching method for preparing light-emitting porous silicon (PS) is developed. A gradient steps (staircase) voltage is applied and hold-up for different periods of time between p-type silicon wafers and a graphite electrode in HF based solutions periodically. The single applied staircase voltage (0-30 V) is ramped in equal steps of 0.5 V for 6 s, and hold at 30 V for 30 s at a current of 6 mA. The current during hold-up time (0 V) was less than 10 μA. The room temperature photoluminescence (PL) behavior of the PS samples as a function of etching parameters has been investigated. The intensity of PL peak is initially increased and blue shifted on increasing etching time, but decreased after prolonged time. These are correlated with the study of changes in surface morphology using atomic force microscope (AFM), porosity and electrical conductance measurements. The time of holding-up the applied voltage during the formation process is found to highly affect the PS properties. On increasing the holding-up time, the intensity of PL peak is increased and blue shifted. The contribution of holding-up the applied steps during the formation process of PS is seen to be more or less similar to the post chemical etching process. It is demonstrated that this method can yield a porous silicon layer with stronger photoluminescence intensity and blue shifted than the porous silicon layer prepared by DC etching

Step voltage with periodic hold-up etching: A novel porous silicon formation

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M. [Department of Physics, Atomic Energy Commission of Syria (AECS), Damascus P.O. Box 6091 (Syrian Arab Republic)]. E-mail: scientific@aec.org.sy; Awad, F. [Department of Physics, Atomic Energy Commission of Syria (AECS), Damascus P.O. Box 6091 (Syrian Arab Republic); Soukeih, M. [Department of Physics, Atomic Energy Commission of Syria (AECS), Damascus P.O. Box 6091 (Syrian Arab Republic)

2007-05-16

A novel etching method for preparing light-emitting porous silicon (PS) is developed. A gradient steps (staircase) voltage is applied and hold-up for different periods of time between p-type silicon wafers and a graphite electrode in HF based solutions periodically. The single applied staircase voltage (0-30 V) is ramped in equal steps of 0.5 V for 6 s, and hold at 30 V for 30 s at a current of 6 mA. The current during hold-up time (0 V) was less than 10 {mu}A. The room temperature photoluminescence (PL) behavior of the PS samples as a function of etching parameters has been investigated. The intensity of PL peak is initially increased and blue shifted on increasing etching time, but decreased after prolonged time. These are correlated with the study of changes in surface morphology using atomic force microscope (AFM), porosity and electrical conductance measurements. The time of holding-up the applied voltage during the formation process is found to highly affect the PS properties. On increasing the holding-up time, the intensity of PL peak is increased and blue shifted. The contribution of holding-up the applied steps during the formation process of PS is seen to be more or less similar to the post chemical etching process. It is demonstrated that this method can yield a porous silicon layer with stronger photoluminescence intensity and blue shifted than the porous silicon layer prepared by DC etching.

Effect of different electrolytes on porous GaN using photo-electrochemical etching

Energy Technology Data Exchange (ETDEWEB)

Al-Heuseen, K., E-mail: kalhussen@yahoo.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Ali, N.K. [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Department of Electronic Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

2011-05-01

This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E{sub 2} (high), A{sub 1} (LO), A{sub 1} (TO) and E{sub 2} (low). There was a red shift in E{sub 2} (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H{sub 2}SO{sub 4}:H{sub 2}O{sub 2} and KOH followed by the samples etched in HF:HNO{sub 3} and in HF:C{sub 2}H{sub 5}OH.

Effect of different electrolytes on porous GaN using photo-electrochemical etching

International Nuclear Information System (INIS)

Al-Heuseen, K.; Hashim, M.R.; Ali, N.K.

2011-01-01

This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E 2 (high), A 1 (LO), A 1 (TO) and E 2 (low). There was a red shift in E 2 (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H 2 SO 4 :H 2 O 2 and KOH followed by the samples etched in HF:HNO 3 and in HF:C 2 H 5 OH.

Effect of different electrolytes on porous GaN using photo-electrochemical etching

Science.gov (United States)

Al-Heuseen, K.; Hashim, M. R.; Ali, N. K.

2011-05-01

This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E 2 (high), A 1 (LO), A 1 (TO) and E 2 (low). There was a red shift in E 2 (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H 2SO 4:H 2O 2 and KOH followed by the samples etched in HF:HNO 3 and in HF:C 2H 5OH.

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

Science.gov (United States)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

Science.gov (United States)

Evans, Laura J.; Beheim, Glenn M.

2006-01-01

High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

Continuous wave ultraviolet radiation induced frustration of etching in lithium niobate single crystals

Energy Technology Data Exchange (ETDEWEB)

Mailis, S.; Riziotis, C.; Smith, P.G.R.; Scott, J.G.; Eason, R.W

2003-02-15

Illumination of the -z face of congruent lithium niobate single crystals with continuous wave (c.w.) ultraviolet (UV) laser radiation modifies the response of the surface to subsequent acid etching. A frequency doubled Ar{sup +} laser ({lambda}=244 nm) was used to illuminate the -z crystal face making it resistive to HF etching and thus transforming the illuminated tracks into ridge structures. This process enables the fabrication of relief patterns in a photolithographic manner. Spatially resolved Raman spectroscopy indicates preservation of the good crystal quality after irradiation.

A novel process for preparation of titanium dioxide from Ti-bearing electric furnace slag: NH4HF2-HF leaching and hydrolyzing process.

Science.gov (United States)

Zheng, Fuqiang; Guo, Yufeng; Qiu, Guanzhou; Chen, Feng; Wang, Shuai; Sui, Yulei; Jiang, Tao; Yang, Lingzhi

2018-02-15

A novel process to prepare titanium dioxide from Ti-bearing electric furnace slag by NH 4 HF 2 -HF leaching and hydrolyzing process has been developed. In this present study, the effects of [NH 4 + ]/[F] mXolar ratio, leaching temperature, [F] concentration, liquid/solid mass ratio, leaching time on the Ti extraction, and the phase transformations have been investigated to reveal the leaching mechanism of Ti-bearing electric furnace slag in NH 4 HF 2 -HF solution. In the NH 4 HF 2 -HF leaching process, the MgTi 2 O 5 and Al 2 TiO 5 are converted to TiF 6 2- and Mg-Al-bearing precipitate. Ti extraction rate reached 98.84% under the optimal conditions. In addition, 98.25% iron ions can be removed in the presence of NaCl prior to hydrolysis process. The effects of pH and temperature on the selective hydrolysis of TiF 6 2- during hydrolysis process were also studied. In the hydrolysis process, the TiF 6 2- is converted to (NH 4 ) 2 TiOF 4 . By calcination, high grade TiO 2 powder with its purity of 99.88% was obtained, using which the products, well crystallized anatase and rutile, were obtained through roasting at 800°C and 1000°C, respectively. Copyright © 2017 Elsevier B.V. All rights reserved.

Introducing etch kernels for efficient pattern sampling and etch bias prediction

Science.gov (United States)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2018-01-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

Directory of Open Access Journals (Sweden)

Zhan Zhan

2017-02-01

Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film

International Nuclear Information System (INIS)

Tang Longjuan; Zhu Yinfang; Yang Jinling; Li Yan; Zhou Wei; Xie Jing; Liu Yunfei; Yang Fuhua

2009-01-01

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN x :H by HF solution. A low etch rate was achieved by increasing the SiH 4 gas flow rate or annealing temperature, or decreasing the NH 3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO 2 and SiN x :H. A high etching selectivity of SiO 2 over SiN x :H was obtained using highly concentrated buffered HF.

Metal-assisted etch combined with regularizing etch

Energy Technology Data Exchange (ETDEWEB)

Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

2018-03-06

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

Real-Time Observation of Carbon Nanotube Etching Process Using Polarized Optical Microscope.

Science.gov (United States)

Zhao, Qiuchen; Yao, Fengrui; Wang, Zequn; Deng, Shibin; Tong, Lianming; Liu, Kaihui; Zhang, Jin

2017-08-01

Controllable synthesis of carbon nanotubes (CNTs) is of great importance in its further application, which attracts broad attention. As growth and etching are the two sides in the process of material crystallography and the control of the competition between them forms the foundation for modern technology of materials design and manufacture, the understanding on etching process of carbon nanotubes is still very unclear because technically it is of great challenge to characterize the dynamics in such small one-dimensional (1D) scale. Here the real-time investigation on the etching process of CNTs is reported, by the hot-wall chemical reactor equipped with a polarized optical microscope. It is discovered that the CNT etching behavior in air is totally of random, including the etching sites, termination sites, and structure dependence. Combining with the dynamic simulation, it is revealed that the random behavior reflects the unique "self-termination" phenomenon. A structure-independent etching propagation barrier of 2.4 eV is also obtained, which indicates that the etching propagation process still follows the conventional Kinetic Wulff construction theory. The results represent the new knowledge on the etching process in carbon nanotube and can contribute to its selective enrichment. Furthermore, the "self-termination" phenomenon may be a universal behavior in 1D process. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-assembled monolayer resists and nanoscale lithography of silicon dioxide thin films by chemically enhanced vapor etching (CEVE)

Science.gov (United States)

Pan, M.; Yun, M.; Kozicki, M. N.; Whidden, T. K.

1996-10-01

We report on the use of electron-beam exposed monolayers of undecylenic acid in the etch rate enhancement of silicon dioxide films in HF vapor for the formation of nanoscale features in the oxide. Variations of the etching characteristics with electron beam parameters are examined and the results analyzed in terms of proposed models of the etching mechanism. Apparent variations in the relative concentrations of etch initiator with the thermal history of the samples prior to etching provides support for the dominant etch initiator within this system as the carboxylic acid moiety bound at the oxide surface. Other variations in the etching characteristics are discussed in terms of differences in localized concentrations of hydrocarbon crosslinks and the effect that this has upon the etch initiation. The process has been employed in the production of features in silicon dioxide surface masks with sizes down to 50 nm.

Fabrication of luminescent porous silicon with stain etches and evidence that luminescence originates in amorphous layers

Science.gov (United States)

Fathauer, R. W.; George, T.; Ksendzov, A.; Lin, T. L.; Pike, W. T.; Vasquez, R. P.; Wu, Z.-C.

1992-01-01

Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.

Low-frequency magnetization processes in chemically etched Co-based amorphous ribbons

International Nuclear Information System (INIS)

Betancourt, I.; Martinez, L.A.; Valenzuela, R.

2005-01-01

In this report we present a study of the magnetization processes for Co-based amorphous ribbons at low frequencies (10 Hz-13 MHz) as a function of decreasing thicknesses attained by chemical etching. Reversible domain-wall bulging, characterized by initial permeability and relaxation frequency, was monitored by means of inductance measurements. The real part of inductance (proportional to initial permeability) exhibited a decreasing trend with diminishing ribbon thickness, together with an increasing tendency for the relaxation frequency. For high amplitude of the ac field (leading to domain-wall unpinning), reduced ribbon thickness showed a deleterious-enhancement effect on irreversible domain-wall displacement, which was observed for both real and imaginary inductance spectroscopic plots. Results are interpreted in terms of reduced domain-wall pinning distances resulting from thinner alloy samples

Study on morphology of high-aspect-ratio grooves fabricated by using femtosecond laser irradiation and wet etching

International Nuclear Information System (INIS)

Chen, Tao; Pan, An; Li, Cunxia; Si, Jinhai; Hou, Xun

2015-01-01

Highlights: • We studied morphologies of silicon grooves fabricated by laser irradiation and wet etching. • We found nano-ripple structures formed on the groove sidewall. • Formations of nano-ripples were due to the formation of standing wave and nanoplanes. • Remaining debris on the groove bottom was removed by KOH etching. - Abstract: Morphologies of high-aspect-ratio silicon grooves fabricated by using femtosecond laser irradiation and selective chemical etching of hydrofluoric acid (HF) were studied. Oxygen was deeply doped into silicon under femtosecond laser irradiation in air, and then the oxygen-doped regions were removed by HF etching to form high-aspect-ratio grooves. After HF etching, periodic nano-ripples which were induced in silicon by femtosecond laser were observed on the groove sidewalls. The ripple orientation was perpendicular or parallel to the laser propagation direction (z direction), which depended on the relative direction between the laser polarization direction and the scanning direction. The formation of nano-ripples with orientations perpendicular to z direction could be attributed to the standing wave generated by the interference of the incident light and the reflected light in z direction. The formation of nano-ripples with orientations parallel to z direction could be attributed to the formation of self-organized periodic nanoplanes (bulk nanogratings) induced by femtosecond laser inside silicon. Materials in the tail portion of laser-induced oxygen doping (LIOD) regions were difficult to be etched by HF solution due to low oxygen concentration. The specimen was etched further in KOH solution to remove remaining materials in LIOD regions and all-silicon grooves were fabricated

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

Directory of Open Access Journals (Sweden)

Kun-Dar Li

2018-02-01

Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

Science.gov (United States)

Li, Kun-Dar; Miao, Jin-Ru

2018-02-01

To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Energy Technology Data Exchange (ETDEWEB)

Malik Rizwan [State Key Laboratory of Digital Manufacturing Equipment and technology, Huazhong University of Science and Technology, 1037 Luoyu road, Wuhan, China 43007 (China); Shi Tielin; Tang Zirong; Liu Shiyuan, E-mail: zirong@mail.hust.edu.cn, E-mail: rizwanmalik@smail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu road Wuhan, 430074 (China)

2011-02-01

Deep reactive ion etching (DRIE) process is a key growth for fabrication of micro-electromechanical system (MEMS) devices. Due to complexity of this process, including interaction of the process steps, full analytical modeling is complex. Plasma process holds deficiency of understanding because it is very easy to measure the results empirically. However, as device parameters shrink, this issue is more critical. In this paper, our process was modeled qualitatively based on 'High Density Plasma Etch Model'. Deep trench solutions of etch rate based on continuity equation were successfully generated first time through mathematical analysis. It was also proved that the product of fluorine and gas phase concentration in SF{sub 6} remains identical during both deposition and etching stages. The etching process was treated as a combination of isotropic, directional and angle-dependent component parts. It exploited a synergistic balance of chemical as well as physical etching for promoting silicon trenches and high aspect ratio structures. Simulations were performed for comprehensive analysis of fluxes coming towards the surface during chemical reaction of gas. It is observed that near the surface, the distribution of the arrival flux follows a cosine distribution. Our model is feasible to analyze various parameters like gas delivery, reactor volume and temperature that help to assert large scale effects and to optimize equipment design.

Enhancement of laser induced damage threshold of fused silica by acid etching combined with UV laser conditioning

International Nuclear Information System (INIS)

Chen Meng; Xiang Xia; Jiang Yong; Zu Xiaotao; Yuan Xiaodong; Zheng Wanguo; Wang Haijun; Li Xibin; Lu Haibing; Jiang Xiaodong; Wang Chengcheng

2010-01-01

Acid etching combined with UV laser conditioning is developed to enhance the laser induced damage threshold (LIDT) of fused silica. Firstly, the fused silica is etched for 1 ∼ 100 min with a buffered 1% HF solution. After acid etching, its transmittance, surface roughness and LIDT are measured. The results reveal that the fused silica has the highest LIDT and transmittance after etching for 10 min. Then UV laser (355 nm) conditioning is adopted to process the 10-min-etched fused silica. When the laser fluence is below 60% of fused silica's zero probability damage threshold, the LIDT increases gradually with the increase of laser conditioning fluence. However, the LIDT rapidly decreases to be lower than the threshold of the 10-min-etched fused silica when the conditioning fluence is up to 80% of the threshold. Proper acid etching and laser conditioning parameters will effectively enhance the laser damage resistance of fused silica. (authors)

Metal-assisted chemical etch porous silicon formation method

Science.gov (United States)

Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

2004-09-14

A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

International Nuclear Information System (INIS)

Roozeboom, F; Kniknie, B; Lankhorst, A M; Winands, G; Knaapen, R; Smets, M; Poodt, P; Dingemans, G; Keuning, W; Kessels, W M M

2012-01-01

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF 6 to form gaseous SiF x etch products, and 2) passivation with C 4 F 8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatially-divided Deep Reactive Ion Etching, S-DRIE, where the process is converted from the time-divided into the spatially divided regime. The spatial division can be accomplished by inert gas bearing 'curtains' of heights down to ∼20 μm. These curtains confine the reactive gases to individual (often linear) injection slots constructed in a gas injector head. By horizontally moving the substrate back and forth under the head one can realize the alternate exposures to the overall cycle. A second improvement in the spatially divided approach is the replacement of the CVD-based C 4 F 8 passivation steps by ALD-based oxide (e.g. SiO 2 ) deposition cycles. The method can have industrial potential in cost-effective creation of advanced 3D interconnects (TSVs), MEMS manufacturing and advanced patterning, e.g., in nanoscale transistor line edge roughness using Atomic Layer Etching.

A Nanoscale Plasma Etching Process for Pole Tip Recession of Perpendicular Recording Magnetic Head

OpenAIRE

LIU, Shoubin; HE, Dayao

2017-01-01

The pole tip of perpendicular recording head is constructed in a stacked structure with materials of NiCoFe, NiFe, Al2O3 and AlTiC. The surfaces of different materials are set at different heights below the air-bearing surface of slider. This paper presented a plasma dry etching process for Pole Tip Recession (PTR) based on an ion beam etching system. Ar and O2 mixed plasma at small incident angles have a high removal rate to the nonmagnetic material. It was utilised to etch the reference sur...

Polymer degradation in reactive ion etching and its possible application to all dry processes

International Nuclear Information System (INIS)

Hiraoka, H.; Welsh, L.W. Jr.

1981-01-01

Dry etching processes involving CF 4 -plasma and reactive ion etching become increasingly important for microcircuit fabrication techniques. In these techniques polymer degradation and etch resistance against reactive species like F atoms and CF 3 + ions are the key factors in the processes. It is well-known that classical electron beam resists like poly(methyl methacrylate) and poly(1-butene sulfone) are not suitable for dry etching processes because they degrade rapidly under these etching conditions. In order to find a correlation of etching rate and polymer structures the thickness loss of polymer films have been measured for a variety of polymer films in reactive ion etching conditions, where CF 3 + ions are the major reactive species with an accelerating potential of 500 volts. Because of its high CF 4 -plasma and reactive ion etch resistance, and because of its high electron beam sensitivity, poly(methacrylonitrile) provides a positive working electron beam resist uniquely suited for all dry processes. (author)

Etching twin core fiber for the temperature-independent refractive index sensing

Science.gov (United States)

Zhang, Chuanbiao; Ning, Tigang; Li, Jing; Zheng, Jingjing; Gao, Xuekai; Lin, Heng; Pei, Li

2018-04-01

We proposed an ultra-compact chemically etched twin core fiber (TCF) based optic refractive index (RI) sensor, in which the etched fiber was fabricated by immersing in an aqueous solution of hydrofluoric acid (HF) to etch the cladding. Due to the multipath evolutions of light during the TCF, the mode induced interference pattern can be used for measurement. Numerical simulations were performed, demonstrating that only the cladding mode strongly interacts with the surrounding media, and the higher cladding modes will be more sensitive to external medium. In the experiment demonstration, the RI response characteristics of the sensor were investigated, which shows a relatively high RI sensitivity and a much low temperature cross-sensitivity with about 1.06 × 10-6 RIU °C-1. Due to low cost and easy fabrication, the sensor can be a suitable candidate in the biochemical field.

In-situ photoluminescence imaging for passivation-layer etching process control for photovoltaics

Science.gov (United States)

Lee, J. Z.; Michaelson, L.; Munoz, K.; Tyson, T.; Gallegos, A.; Sullivan, J. T.; Buonassisi, T.

2014-07-01

Light-induced plating (LIP) of solar-cell metal contacts is a scalable alternative to silver paste. However, LIP requires an additional patterning step to create openings in the silicon nitride (SiNx) antireflection coating (ARC) layer prior to metallization. One approach to pattern the SiNx is masking and wet chemical etching. In-situ real-time photoluminescence imaging (PLI) is demonstrated as a process-monitoring method to determine when SiNx has been fully removed during etching. We demonstrate that the change in PLI signal intensity during etching is caused by a combination of (1) decreasing light absorption from the reduction in SiNx ARC layer thickness and (2) decreasing surface lifetime as the SiNx/Si interface transitions to an etch-solution/Si. Using in-situ PLI to guide the etching process, we demonstrate a full-area plated single-crystalline silicon device. In-situ PLI has the potential to be integrated into a commercial processing line to improve process control and reliability.

Atomic scale engineering of HfO2-based dielectrics for future DRAM applications

International Nuclear Information System (INIS)

Dudek, Piotr

2011-01-01

Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO 2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO 2 (BaHfO 3 ) films and Ti-added BaHfO 3 (BaHf 0.5 Ti 0.5 O 3 ) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO 3 (k∝38) and BaHf 0.5 Ti 0.5 O 3 (k∝90) with respect to monoclinic HfO 2 (k∝19). Meanwhile the CET values scaled down to 1 nm for BaHfO 3 and ∝0.8 nm for BaHf 0.5 Ti 0.5 O 3 with respect to HfO 2 (CET=1.5 nm). The Hf 4+ ions substitution in BaHfO 3 by Ti 4+ ions led to a significant decrease of thermal budget from 900 C for BaHfO 3 to 700 C for BaHf 0.5 Ti 0.5 O 3 . Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. (orig.)

Effects of various etching protocols on the flexural properties and surface topography of fiber-reinforced composite dental posts.

Science.gov (United States)

Aksornmuang, Juthatip; Chuenarrom, Chanya; Chittithaworn, Natjira

2017-09-26

The purpose of this study was to evaluate the flexural properties and surface topography of fiber posts surface-treated with various etching protocols. Seventy each of three types of fiber posts: RelyX Fiber Post, Tenax Fiber Trans, and D.T. Light-Post Illusion X-Ro, were randomly divided into 7 groups: no surface treatment, surface treated with hydrofluoric acid (HF) 4.5% for 60 s, HF 4.5% for 120 s, HF 9.6% for 15 s, HF 9.6% for 60 s, HF 9.6% for 120 s, and treated with H 2 O 2 24% for 10 min. The specimens were then subjected to a three-point bending test. Surface topographies of the posts were observed using a SEM. The results indicate that fiber post surface pretreatments had no adverse effects on the flexural properties. However, the fiber posts treated with high HF concentrations or long etching times seemed to have more surface irregularities.

Dry etching technologies for the advanced binary film

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

2011-11-01

ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

Etch bias inversion during EUV mask ARC etch

Science.gov (United States)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Feedback control of chlorine inductively coupled plasma etch processing

International Nuclear Information System (INIS)

Lin Chaung; Leou, K.-C.; Shiao, K.-M.

2005-01-01

Feedback control has been applied to poly-Si etch processing using a chlorine inductively coupled plasma. Since the positive ion flux and ion energy incident upon the wafer surface are the key factors that influence the etch rate, the ion current and the root mean square (rms) rf voltage on the wafer stage, which are measured using an impedance meter connected to the wafer stage, are adopted as the controlled variables to enhance etch rate. The actuators are two 13.56 MHz rf power generators, which adjust ion density and ion energy, respectively. The results of closed-loop control show that the advantages of feedback control can be achieved. For example, with feedback control, etch rate variation under the transient chamber wall condition is reduced roughly by a factor of 2 as compared to the open-loop case. In addition, the capability of the disturbance rejection was also investigated. For a gas pressure variation of 20%, the largest etch rate variation is about 2.4% with closed-loop control as compared with as large as about 6% variation using open-loop control. Also the effect of ion current and rms rf voltage on etch rate was studied using 2 2 factorial design whose results were used to derive a model equation. The obtained formula was used to adjust the set point of ion current and rf voltage so that the desired etch rate was obtained

Feature scale modeling for etching and deposition processes in semiconductor manufacturing

International Nuclear Information System (INIS)

Pyka, W.

2000-04-01

Simulation of etching and deposition processes as well as three-dimensional geometry generation are important issues in state of the art TCAD applications. Three-dimensional effects are gaining importance for semiconductor devices and for their interconnects. Therefore a strictly physically based simulation of their topography is required. Accurate investigation of single etching and deposition processes has become equally important as process integration. Within this context several aspects of three-dimensional topography simulation have been covered by this thesis and new and interesting results have been achieved in various areas. The algorithmic core of the cell-based structuring element surface propagation method has been optimized and has been eliminated from its position as factor which predominantly determines the required CPU time. In parallel with investigated optimization techniques and required by various process models, the implementation of the surface normal calculation and the special handling of voids and unconnected parts of the geometry has been completed in three dimensions. A process-step-based solid modeling tool which incorporates layout data as well as aerial image simulation has been supplied. It can be coupled with the topography simulation and includes simple geometrically based models for CMP and oxidation. In the presented combination, the tool makes use of the design information stored in the layout file, combines it with the manufacturing recipe, and hence is extremely helpful for the automatic generation of three-dimensional structures. Its usefulness has been proven with several interconnect examples. Regarding topography models, resist development not only turned out to be very helpful for predicting exposed and etched resist profiles within a rigorous lithography simulation, but, by means of benchmark examples, also demonstrated the extraordinary stability of the proposed cellular surface movement algorithm. With respect to

Advanced Simulation Technology to Design Etching Process on CMOS Devices

Science.gov (United States)

Kuboi, Nobuyuki

2015-09-01

Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

Etching behaviour of alpha-recoil tracks in natural dark mica studied via artificial ion tracks

International Nuclear Information System (INIS)

Lang, M.; Glasmacher, U.A.; Neumann, R.; Wagner, G.A.

2003-01-01

Alpha-recoil tracks (ARTs) created by the α-decay of U, Th, and their daughter nuclei, are used by a new dating method to determine the formation age of dark mica bearing Quaternary and Neogene volcanic rocks and the cooling age of plutonic and metamorphic rocks [Chem. Geol. 166 (2000) 127, Science 155 (1967) 1103]. The age equation combines the volumetric density of ARTs with the U and Th contents. Etching latent ARTs (diameter 30-100 nm) in the mica mineral phlogopite by HF and measuring the areal density of triangular etch pits by optical and scanning force microscopy (SFM) leads to a linear growth of ART areal density versus etching time. The ART volume density is a function of the slope of the areal density and the etching rate (v eff ). Therefore, the determination of v eff is essential for the calculation of an age value. To determine the etching parameters such as etching efficiency and v eff , phlogopite samples were irradiated with 80 keV Au ions. Irradiated surfaces were etched with 4% HF at 23±2 deg. C during successive time intervals and after each interval studied with SFM. The etching rate v eff was determined by different techniques. To evaluate the threshold of etchability, the energy losses of the Au ions and α-recoil nuclei in phlogopite were calculated with the SRIM00 code. The etching efficiency of the Au ion tracks was then used to predict the corresponding etching efficiency of the natural radioactive nuclei

Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

Science.gov (United States)

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-10-01

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1.A novel single-source precursor was synthesized by the reaction of an allyl hydrido

Electrochemically etched nanoporous silicon membrane for separation of biological molecules in mixture

Science.gov (United States)

Burham, Norhafizah; Azlan Hamzah, Azrul; Yunas, Jumril; Yeop Majlis, Burhanuddin

2017-07-01

This paper presents a technique for separating biological molecules in mixture using nanoporous silicon membrane. Nanopores were formed using electrochemical etching process (ECE) by etching a prefabricated silicon membrane in hydrofluoric acid (HF) and ethanol, and then directly bonding it with PDMS to form a complete filtration system for separating biological molecules. Tygon S3™ tubings were used as fluid interconnection between PDMS molds and silicon membrane during testing. Electrochemical etching parameters were manipulated to control pore structure and size. In this work, nanopores with sizes of less than 50 nm, embedded on top of columnar structures have been fabricated using high current densities and variable HF concentrations. Zinc oxide was diluted with deionized (DI) water and mixed with biological molecules and non-biological particles, namely protein standard, serum albumin and sodium chloride. Zinc oxide particles were trapped on the nanoporous silicon surface, while biological molecules of sizes up to 12 nm penetrated the nanoporous silicon membrane. The filtered particles were inspected using a Zetasizer Nano SP for particle size measurement and count. The Zetasizer Nano SP results revealed that more than 95% of the biological molecules in the mixture were filtered out by the nanoporous silicon membrane. The nanoporous silicon membrane fabricated in this work is integratable into bio-MEMS and Lab-on-Chip components to separate two or more types of biomolecules at once. The membrane is especially useful for the development of artificial kidney.

Suspended HfO2 photonic crystal slab on III-nitride/Si platform

International Nuclear Information System (INIS)

Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

2014-01-01

We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2/H2 plasmas

International Nuclear Information System (INIS)

Kim, J. S.; Kwon, B. S.; Heo, W.; Jung, C. R.; Park, J. S.; Shon, J. W.; Lee, N.-E.

2010-01-01

A multilevel resist (MLR) structure can be fabricated based on a very thin amorphous carbon (a-C) layer ( congruent with 80 nm) and Si 3 N 4 hard-mask layer ( congruent with 300 nm). The authors investigated the selective etching of the Si 3 N 4 layer using a physical-vapor-deposited (PVD) a-C mask in a dual-frequency superimposed capacitively coupled plasma etcher by varying the process parameters in the CH 2 F 2 /H 2 /Ar plasmas, viz., the etch gas flow ratio, high-frequency source power (P HF ), and low-frequency source power (P LF ). They found that under certain etch conditions they obtain infinitely high etch selectivities of the Si 3 N 4 layers to the PVD a-C on both the blanket and patterned wafers. The etch gas flow ratio played a critical role in determining the process window for infinitely high Si 3 N 4 /PVD a-C etch selectivity because of the change in the degree of polymerization. The etch results of a patterned ArF photoresisit/bottom antireflective coating/SiO x /PVD a-C/Si 3 N 4 MLR structure supported the idea of using a very thin PVD a-C layer as an etch-mask layer for the Si 3 N 4 hard-mask pattern with a pattern width of congruent with 80 nm and high aspect ratio of congruent with 5.

A multi-step electrochemical etching process for a three-dimensional micro probe array

International Nuclear Information System (INIS)

Kim, Yoonji; Youn, Sechan; Cho, Young-Ho; Park, HoJoon; Chang, Byeung Gyu; Oh, Yong Soo

2011-01-01

We present a simple, fast, and cost-effective process for three-dimensional (3D) micro probe array fabrication using multi-step electrochemical metal foil etching. Compared to the previous electroplating (add-on) process, the present electrochemical (subtractive) process results in well-controlled material properties of the metallic microstructures. In the experimental study, we describe the single-step and multi-step electrochemical aluminum foil etching processes. In the single-step process, the depth etch rate and the bias etch rate of an aluminum foil have been measured as 1.50 ± 0.10 and 0.77 ± 0.03 µm min −1 , respectively. On the basis of the single-step process results, we have designed and performed the two-step electrochemical etching process for the 3D micro probe array fabrication. The fabricated 3D micro probe array shows the vertical and lateral fabrication errors of 15.5 ± 5.8% and 3.3 ± 0.9%, respectively, with the surface roughness of 37.4 ± 9.6 nm. The contact force and the contact resistance of the 3D micro probe array have been measured to be 24.30 ± 0.98 mN and 2.27 ± 0.11 Ω, respectively, for an overdrive of 49.12 ± 1.25 µm.

Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process

Science.gov (United States)

Kumazaki, Yusuke; Uemura, Keisuke; Sato, Taketomo; Hashizume, Tamotsu

2017-05-01

The photocarrier-regulated electrochemical (PREC) process was developed for fabricating recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for normally off operation. The PREC process is based on photo-assisted electrochemical etching using low-energy chemical reactions. The fundamental photo-electrochemical measurements on AlGaN/GaN heterostructures revealed that the photo-carriers generated in the top AlGaN layer caused homogeneous etching of AlGaN with a smooth surface, but those generated in the GaN layer underneath caused inhomogeneous etching that roughens the surface. The concept of the PREC process is to supply the photo-carriers generated only in the AlGaN layer by selecting proper conditions on light wavelength and voltage. The phenomenon of self-termination etching has been observed during the PREC process, where the etching depth was controlled by light intensity. The recessed-gate AlGaN/GaN HEMT fabricated with the PREC process showed positive threshold voltage and improvement in transconductance compared to planar-gate AlGaN/GaN HEMTs.

Atomic scale engineering of HfO{sub 2}-based dielectrics for future DRAM applications

Energy Technology Data Exchange (ETDEWEB)

Dudek, Piotr

2011-02-14

Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO{sub 2} thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO{sub 2} (BaHfO{sub 3}) films and Ti-added BaHfO{sub 3} (BaHf{sub 0.5}Ti{sub 0.5}O{sub 3}) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO{sub 3} (k{proportional_to}38) and BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} (k{proportional_to}90) with respect to monoclinic HfO{sub 2} (k{proportional_to}19). Meanwhile the CET values scaled down to 1 nm for BaHfO{sub 3} and {proportional_to}0.8 nm for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} with respect to HfO{sub 2} (CET=1.5 nm). The Hf{sup 4+} ions substitution in BaHfO{sub 3} by Ti{sup 4+} ions led to a significant decrease of thermal budget from 900 C for BaHfO{sub 3} to 700 C for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3}. Future studies need to focus

Technique for etching monolayer and multilayer materials

Science.gov (United States)

Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

2015-10-06

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond

Science.gov (United States)

Dunn, Derren; Sporre, John R.; Deshpande, Vaibhav; Oulmane, Mohamed; Gull, Ronald; Ventzek, Peter; Ranjan, Alok

2017-03-01

Increasingly, advanced process nodes such as 7nm (N7) are fundamentally 3D and require stringent control of critical dimensions over high aspect ratio features. Process integration in these nodes requires a deep understanding of complex physical mechanisms to control critical dimensions from lithography through final etch. Polysilicon gate etch processes are critical steps in several device architectures for advanced nodes that rely on self-aligned patterning approaches to gate definition. These processes are required to meet several key metrics: (a) vertical etch profiles over high aspect ratios; (b) clean gate sidewalls free of etch process residue; (c) minimal erosion of liner oxide films protecting key architectural elements such as fins; and (e) residue free corners at gate interfaces with critical device elements. In this study, we explore how hybrid modeling approaches can be used to model a multi-step finFET polysilicon gate etch process. Initial parts of the patterning process through hardmask assembly are modeled using process emulation. Important aspects of gate definition are then modeled using a particle Monte Carlo (PMC) feature scale model that incorporates surface chemical reactions.1 When necessary, species and energy flux inputs to the PMC model are derived from simulations of the etch chamber. The modeled polysilicon gate etch process consists of several steps including a hard mask breakthrough step (BT), main feature etch steps (ME), and over-etch steps (OE) that control gate profiles at the gate fin interface. An additional constraint on this etch flow is that fin spacer oxides are left intact after final profile tuning steps. A natural optimization required from these processes is to maximize vertical gate profiles while minimizing erosion of fin spacer films.2

Interface engineered HfO2-based 3D vertical ReRAM

International Nuclear Information System (INIS)

Hudec, Boris; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Hou, Tuo-Hung; Jančovič, Peter; Fröhlich, Karol; Mičušík, Matej; Omastová, Mária

2016-01-01

We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO 2 /TiN memory cell. The HfO 2 switching layer is grown by atomic layer deposition on the sidewall of a SiO 2 /TiN/SiO 2 /TiN/SiO 2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 10 4 s and excellent switching stability at 400 K. Endurance of 10 7 write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance. (paper)

FY 1999 report on the results of the R and D of the substituting gas system and the substituting process of the etching gas used in the electronic device production process; 1999 nendo denshi device seizo process de shiyosuru etching gas no daitai gas system oyobi daitai process no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

As to the dry etching process and the wiring process where PFC gas and electric power are required most in the electronic device production process, an investigational study was conducted with the aim of PFC saving and energy saving, and the FY 1999 results were summed up. In the study, high efficiency etching process analysis equipment was developed, and three kinds of PFC gas quantitative analysis method were comparatively studied. Relating to the substitution of global environmental warming gas, it was found that C{sub x}F{sub y} type gas was effective which includes no oxygen, has a lot of carbon element numbers, and has double unsaturated bond. Further, in the study of the technology of PFC decomposition by plasma, it was indicated that PFC of 98.7% at maximum in exhaust gas could be removed on ideal conditions. In the dry etching technology by non-PFC gas of the organic insulating film, it was found out that NH{sub 3} base gas is more excellent in both shape and speed of etching than the existing O{sub 2} base one. As to the future wiring technology, new concepts of the optical wiring inside chip, etc. were proposed. (NEDO)

Novel optical and structural properties of porous GaAs formed by anodic etching of n±GaAs in a HF:C_2H_5OH:HCl:H_2O_2:H_2O electrolyte: effect of etching time

International Nuclear Information System (INIS)

Naddaf, M.; Saad, M.

2014-01-01

Porous GaAs layers have been formed by anodic etching of n±type GaAs (10.0) substrates in a HF:C_2H_5OH:HCl:H_2O_2:H_2O electrolyte. A dramatic impact of etching time on the optical and structural properties of porous GaAs layer is demonstrated. The nano/micro-features of porous GaAs layers are revealed by scanning electron microscopy (SEM) imaging. Two-peak room temperature photoluminescence (PL), "blue-green"and "green-yellow", is obtained in all prepared porous GaAs samples. Proper adjustment of etching time is found to produce a white color layer, instead of the usual dark gray color of porous GaAs. This is found to cause vast enhancement in the intensity of the visible PL in porous GaAs layer. Chemical composition and structural characterization by means of X-ray photoelectron spectroscopic (XPS), X-ray diffraction (XRD), and micro-Raman spectroscopy, confirm that this layer is characterized with monoclinic β-Ga_2O_3 rich surface. Etching time induced-modification of structural and chemical properties of porous GaAs layer is discussed and correlated to its PL behavior. It is inferred that the "blue-green"PL in porous GaAs can be ascribed to different degrees of quantum confinement in GaAs nano crystallites, whereas, the "green-yellow"PL is highly influenced by the As_2O_3 and Ga_2O_3, content in the porous GaAs layer. In addition, the reflectance measurements reveal an anti-refection trend of behavior of porous GaAs layers in the spectral range (500-1,100 nm). (author)

Erbium doped stain etched porous silicon

International Nuclear Information System (INIS)

Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

2008-01-01

In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

Continuous Process for the Etching, Rinsing and Drying of MEMS Using Supercritical Carbon Dioxide

Energy Technology Data Exchange (ETDEWEB)

Min, Seon Ki; Han, Gap Su; You, Seong-sik [Korea University of Technology and Education, Cheonan (Korea, Republic of)

2015-10-15

The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-CO{sub 2} (supercritical-CO{sub 2}) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-CO{sub 2}. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-CO{sub 2} without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, 25 .deg. C) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, 5 .deg. C), we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-CO{sub 2} (7.5 Mpa, 40 .deg. C), we had as good results as those of the case using gas-CO{sub 2}. Besides the processing time was shortened compared with that of the case of using gas-CO{sub 2}.

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Bouchoule, S.; Vallier, L.; Patriarche, G.; Chevolleau, T.; Cardinaud, C.

2012-01-01

A Cl 2 -HBr-O 2 /Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate (∼600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO x passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl 2 -based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be ∼1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl 2 -based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl 2 -based ICP etching for the recovery of the InP material.

Single-source-precursor synthesis of dense SiC/HfC(x)N(1-x)-based ultrahigh-temperature ceramic nanocomposites.

Science.gov (United States)

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-11-21

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfC(x)N(1-x)-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfC(x)N(1-x)-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfC(x)N(1-x)-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm(-1), the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm(-1).

Dominant rate process of silicon surface etching by hydrogen chloride gas

International Nuclear Information System (INIS)

Habuka, Hitoshi; Suzuki, Takahiro; Yamamoto, Sunao; Nakamura, Akio; Takeuchi, Takashi; Aihara, Masahiko

2005-01-01

Silicon surface etching and its dominant rate process are studied using hydrogen chloride gas in a wide concentration range of 1-100% in ambient hydrogen at atmospheric pressure in a temperature range of 1023-1423 K, linked with the numerical calculation accounting for the transport phenomena and the surface chemical reaction in the entire reactor. The etch rate, the gaseous products and the surface morphology are experimentally evaluated. The dominant rate equation accounting for the first-order successive reactions at silicon surface by hydrogen chloride gas is shown to be valid. The activation energy of the dominant surface process is evaluated to be 1.5 x 10 5 J mol - 1 . The silicon deposition by the gaseous by-product, trichlorosilane, is shown to have a negligible influence on the silicon etch rate

Etching processes of transparent carbon nanotube thin films using laser technologies

International Nuclear Information System (INIS)

Lin, H.K.; Lin, R.C.; Li, C.H.

2010-01-01

Carbon nanotubes (CNTs) have potential as a transparent conductive material with good mechanical and electrical properties. However, carbon nanotube thin film deposition and etching processes are very difficult to pattern the electrode. In this study, transparent CNT film with a binder is coated on a PET flexible substrate. The transmittance and sheet resistance of carbon nanotube film are 84% and 1000 Ω/□, respectively. The etching process of carbon nanotube film on flexible substrates was investigated using 355 nm and 1064 nm laser sources. Experimental results show that carbon nanotube film can be ablated using laser technology. With the 355 nm UV laser, the minimum etched line width was 20 μm with a low amount of recast material of the ablated sections. The optimal conditions of laser ablation were determined for carbon nanotube film.

Dry etching technology for semiconductors

CERN Document Server

Nojiri, Kazuo

2015-01-01

This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

Single Mode Optical Fiber based Refractive Index Sensor using Etched Cladding

OpenAIRE

Kumar, Ajay; Gupta, Geeta; Mallik, Arun; Bhatnagar, Anuj

2011-01-01

The use of optical fiber for sensor applications is a topic of current interest. We report the fabrication of etched single mode optical fiber based refractive index sensor. Experiments are performed to determine the etch rate of fiber in buffered hydrofluoric acid, which can be high or low depending upon the temperature at which etching is carried out. Controlled wet etching of fiber cladding is performed using these measurements and etched fiber region is tested for refractive index sensing...

Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

Directory of Open Access Journals (Sweden)

Jie Yang

Full Text Available A Similarity Ratio Analysis (SRA method is proposed for early-stage Fault Detection (FD in plasma etching processes using real-time Optical Emission Spectrometer (OES data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A, takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.

Planarization of the diamond film surface by using the hydrogen plasma etching with carbon diffusion process

International Nuclear Information System (INIS)

Kim, Sung Hoon

2001-01-01

Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 .deg. C by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices

Design for human factors (DfHF): a grounded theory for integrating human factors into production design processes.

Science.gov (United States)

Village, Judy; Searcy, Cory; Salustri, Filipo; Patrick Neumann, W

2015-01-01

The 'design for human factors' grounded theory explains 'how' human factors (HF) went from a reactive, after-injury programme in safety, to being proactively integrated into each step of the production design process. In this longitudinal case study collaboration with engineers and HF Specialists in a large electronics manufacturer, qualitative data (e.g. meetings, interviews, observations and reflections) were analysed using a grounded theory methodology. The central tenet in the theory is that when HF Specialists acclimated to the engineering process, language and tools, and strategically aligned HF to the design and business goals of the organisation, HF became a means to improve business performance. This led to engineers 'pulling' HF Specialists onto their team. HF targets were adopted into engineering tools to communicate HF concerns quantitatively, drive continuous improvement, visibly demonstrate change and lead to benchmarking. Senior management held engineers accountable for HF as a key performance indicator, thus integrating HF into the production design process. Practitioner Summary: Research and practice lack explanations about how HF can be integrated early in design of production systems. This three-year case study and the theory derived demonstrate how ergonomists changed their focus to align with design and business goals to integrate HF into the design process.

Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

2016-01-01

Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

Characterization of the CH4/H2/Ar high density plasma etching process for ZnSe

Science.gov (United States)

Eddy, C. R.; Leonhardt, D.; Shamamian, V. A.; Butler, J. E.

2001-05-01

High density plasma etching of zinc selenide using CH4/H2/Ar plasma chemistries is investigated. Mass spectrometry, using through-the-platen sampling, is used to identify and monitor etch products evolving from the surface during etching. The identifiable primary etch products are Zn, Se, ZnH2, SeH2, Zn(CH3)2, and Se(CH3)2. Their concentrations are monitored as ion and neutral fluxes (both in intensity and composition), ion energy, and substrate temperature are varied. General insights about the surface chemistry mechanisms of the etch process are given from these observations. Regions of process parameter space best suited for moderate rate, anisotropic, and low damage etching of ZnSe are proposed.

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

International Nuclear Information System (INIS)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-01-01

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H 2 O 2 /HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film.

Science.gov (United States)

Zuo, Zewen; Zhu, Kai; Ning, Lixin; Cui, Guanglei; Qu, Jun; Huang, Wanxia; Shi, Yi; Liu, Hong

2015-04-17

Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices' applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing.

Influence of copper foil polycrystalline structure on graphene anisotropic etching

Energy Technology Data Exchange (ETDEWEB)

Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2017-01-30

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Influence of copper foil polycrystalline structure on graphene anisotropic etching

International Nuclear Information System (INIS)

Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

2017-01-01

Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

2012-01-01

Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

Efficient alpha particle detection by CR-39 applying 50 Hz-HV electrochemical etching method

International Nuclear Information System (INIS)

Sohrabi, M.; Soltani, Z.

2016-01-01

Alpha particles can be detected by CR-39 by applying either chemical etching (CE), electrochemical etching (ECE), or combined pre-etching and ECE usually through a multi-step HF-HV ECE process at temperatures much higher than room temperature. By applying pre-etching, characteristics responses of fast-neutron-induced recoil tracks in CR-39 by HF-HV ECE versus KOH normality (N) have shown two high-sensitivity peaks around 5–6 and 15–16 N and a large-diameter peak with a minimum sensitivity around 10–11 N at 25°C. On the other hand, 50 Hz-HV ECE method recently advanced in our laboratory detects alpha particles with high efficiency and broad registration energy range with small ECE tracks in polycarbonate (PC) detectors. By taking advantage of the CR-39 sensitivity to alpha particles, efficacy of 50 Hz-HV ECE method and CR-39 exotic responses under different KOH normalities, detection characteristics of 0.8 MeV alpha particle tracks were studied in 500 μm CR-39 for different fluences, ECE duration and KOH normality. Alpha registration efficiency increased as ECE duration increased to 90 ± 2% after 6–8 h beyond which plateaus are reached. Alpha track density versus fluence is linear up to 10 6  tracks cm −2 . The efficiency and mean track diameter versus alpha fluence up to 10 6  alphas cm −2 decrease as the fluence increases. Background track density and minimum detection limit are linear functions of ECE duration and increase as normality increases. The CR-39 processed for the first time in this study by 50 Hz-HV ECE method proved to provide a simple, efficient and practical alpha detection method at room temperature. - Highlights: • Alpha particles of 0.8 MeV were detected in CR-39 by 50 Hz-HV ECE method. • Efficiency/track diameter was studied vs fluence and time for 3 KOH normality. • Background track density and minimum detection limit vs duration were studied. • A new simple, efficient and low-cost alpha detection method

Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

Science.gov (United States)

Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

2018-05-01

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer ( 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm2/V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

Refractive index and temperature-sensing characteristics of a cladding-etched thin core fiber interferometer

Science.gov (United States)

Wang, Weiying; Dong, Xinran; Chu, Dongkai; Hu, Youwang; Sun, Xiaoyan; Duan, Ji-An

2018-05-01

A high refractive index (RI) sensor based on an in-line Mach-Zehnder mode interferometer (MZI) is proposed. The sensor was realized by splicing a 2-cm length of cladding-etched thin core fiber (TCF) between two single mode fibers (SMFs). The TCF-structured MZI exhibited good fringe visibility as high as 15 dB in air and the high RI sensitivity attained a value of 1143.89 nm/RIU at a RI of 1.447. The experimental data revealed that the MZI has high RI sensitivity after HF etching realizing 2599.66 nm/RIU. Studies were performed on the temperature characteristics of the device. It is anticipated that this high RI sensor will be deployed in new and diverse applications in the chemical and biological fields.

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

Science.gov (United States)

Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

2018-05-01

In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

Controlled ion track etching

Science.gov (United States)

George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

2006-03-01

It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

Plasma etching of patterned tungsten

International Nuclear Information System (INIS)

Franssila, S.

1993-01-01

Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

Science.gov (United States)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

Performance improvements of binary diffractive structures via optimization of the photolithography and dry etch processes

Science.gov (United States)

Welch, Kevin; Leonard, Jerry; Jones, Richard D.

2010-08-01

Increasingly stringent requirements on the performance of diffractive optical elements (DOEs) used in wafer scanner illumination systems are driving continuous improvements in their associated manufacturing processes. Specifically, these processes are designed to improve the output pattern uniformity of off-axis illumination systems to minimize degradation in the ultimate imaging performance of a lithographic tool. In this paper, we discuss performance improvements in both photolithographic patterning and RIE etching of fused silica diffractive optical structures. In summary, optimized photolithographic processes were developed to increase critical dimension uniformity and featuresize linearity across the substrate. The photoresist film thickness was also optimized for integration with an improved etch process. This etch process was itself optimized for pattern transfer fidelity, sidewall profile (wall angle, trench bottom flatness), and across-wafer etch depth uniformity. Improvements observed with these processes on idealized test structures (for ease of analysis) led to their implementation in product flows, with comparable increases in performance and yield on customer designs.

Chemical states and electronic structure of a HfO(-2)/Ge(001) interface

International Nuclear Information System (INIS)

Seo, Kang-ill; McIntyre, Paul C.; Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; SLAC, SSRL; Saraswat, Krishna C.; Stanford U., Elect. Eng. Dept.

2005-01-01

We report the chemical bonding structure and valence band alignment at the HfO 2 /Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO 2 film using a dilute HF-solution. We found that a very non-stoichiometric GeO x layer exists at the HfO 2 /Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO x was determined to be ΔE v (Ge-GeO x ) = 2.2 ± 0.15 eV, and that between Ge and HfO 2 , ΔE v (Ge-HfO 2 ) = 2.7 ± 0.15 eV

Phase transition and luminescence properties from vapor etched silicon

International Nuclear Information System (INIS)

Aouida, S.; Saadoun, M.; Ben Saad, K.; Bessais, B.

2006-01-01

In this work, we present a study on the structure and photoluminescence (PL) properties of a non-conventional ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 (white powder) obtained from HNO 3 /HF chemical vapor etching (CVE) of silicon wafers. The CVE method leads either to the formation of luminescent Porous Silicon (PS) or SiO x /Si-containing (NH 4 ) 2 SiF 6 depending on the experimental conditions. At specific conditions (i.e., HNO 3 / HF volume ratio > 1 / 4), the CVE technique can generate instead of PS, a (NH 4 ) 2 SiF 6 phase where SiO x /Si particles are embedded. The (NH 4 ) 2 SiF 6 marketed powder is not luminescent, while that obtained from silicon vapor-etching presents a noticeable intense and stable photoluminescence (PL), which was found to have mainly two shoulders at 1.98 and 2.1 eV. Two processes have been proposed to explain this PL property. First, the visible luminescence around 1.98 eV would come from silicon nanoparticles embedded in the powder, having a distribution size that does not allow SiO x species to influence their own PL. Second, the PL shoulder around 2.1 eV would originate from small silicon nanoparticles trapped in SiO x features, leading to oxide related states that may trap electrons or excitons, depending on the silicon nanoparticle size, wherein radiative recombination occurs. The PL shoulder could become broader at low temperatures suggesting the existence of radiative recombination in SiO x related defects

Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

Science.gov (United States)

Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

2017-06-01

The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism

Energy Technology Data Exchange (ETDEWEB)

Ulin, V. P.; Ulin, N. V.; Soldatenkov, F. Yu., E-mail: f.soldatenkov@mail.ioffe.ru [Ioffe Physical–Technical Institute (Russian Federation)

2017-04-15

The interaction of heavily doped p- and n-type Si crystals with hydrofluoric acid in the dark with and without contact with metals having greatly differing work functions (Ag and Pd) is studied. The dependences of the dissolution rates of Si crystals in HF solutions that contain oxidizing agents with different redox potentials (FeCl{sub 3}, V{sub 2}O{sub 5} and CrO{sub 3}) on the type and level of silicon doping are determined. Analysis of the experimental data suggests that valence-band holes in silicon are not directly involved in the anodic reactions of silicon oxidation and dissolution and their generation in crystals does not limit the rate of these processes. It is also shown that the character and rate of the chemical process leading to silicon dissolution in HF-containing electrolytes are determined by the interfacial potential attained at the semiconductor–electrolyte interface. The mechanism of electrochemical pore formation in silicon crystals is discussed in terms of selfconsistent cooperative reactions of nucleophilic substitution between chemisorbed fluorine anions and coordination- saturated silicon atoms in the crystal subsurface layer. A specific feature of these reactions for silicon crystals is that vacant nonbonding d{sup 2}sp{sup 3} orbitals of Si atoms, associated with sixfold degenerate states corresponding to the Δ valley of the conduction band, are involved in the formation of intermediate complexes. According to the suggested model, the pore-formation process spontaneously develops in local regions of the interface under the action of the interfacial potential in the adsorption layer and occurs as a result of the detachment of (SiF{sub 2}){sub n} polymer chains from the crystal. Just this process leads to the preferential propagation of pores along the <100> crystallographic directions. The thermodynamic aspects of pore nucleation and the effect of the potential drop across the interface, conduction type, and free-carrier concentration

Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

Science.gov (United States)

Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

1975-01-01

Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

Overcoming etch challenges related to EUV based patterning (Conference Presentation)

Science.gov (United States)

Metz, Andrew W.; Cottle, Hongyun; Honda, Masanobu; Morikita, Shinya; Kumar, Kaushik A.; Biolsi, Peter

2017-04-01

Research and development activities related to Extreme Ultra Violet [EUV] defined patterning continue to grow for cost and extreme process control challenges of Self-Aligned Quad Patterning [SAQP] with continued momentum for EUV ecosystem readiness could provide cost advantages in addition to improved intra-level overlay performance relative to multiple patterning approaches. However, Line Edge Roughness [LER] and Line Width Roughness [LWR] performance of EUV defined resist images are still far from meeting technology needs or ITRS spec performance. Furthermore, extreme resist height scaling to mitigate flop over exacerbates the plasma etch trade-offs related to traditional approaches of PR smoothing, descum implementation and maintaining 2D aspect ratios of short lines or elliptical contacts concurrent with ultra-high photo resist [PR] selectivity. In this paper we will discuss sources of LER/LWR, impact of material choice, integration, and innovative plasma process techniques and describe how TELTM VigusTM CCP Etchers can enhance PR selectivity, reduce LER/LWR, and maintain 2D aspect ratio of incoming patterns. Beyond traditional process approaches this paper will show the utility of: [1] DC Superposition in enhancing EUV resist hardening and selectivity, increasing resistance to stress induced PR line wiggle caused by CFx passivation, and mitigating organic planarizer wiggle; [2] Quasi Atomic Layer Etch [Q-ALE] for ARC open eliminating the tradeoffs between selectivity, CD, and shrink ratio control; and [3] ALD+Etch FUSION technology for feature independent CD shrink and LER reduction. Applicability of these concepts back transferred to 193i based lithography is also confirmed.

Optimization of HNA etching parameters to produce high aspect ratio solid silicon microneedles

International Nuclear Information System (INIS)

Hamzah, A A; Yeop Majlis, B; Yunas, J; Dee, C F; Abd Aziz, N; Bais, B

2012-01-01

High aspect ratio solid silicon microneedles with a concave conic shape were fabricated. Hydrofluoric acid–nitric acid–acetic acid (HNA) etching parameters were characterized and optimized to produce microneedles that have long and narrow bodies with smooth surfaces, suitable for transdermal drug delivery applications. The etching parameters were characterized by varying the HNA composition, the optical mask's window size, the etching temperature and bath agitation. An L9 orthogonal Taguchi experiment with three factors, each having three levels, was utilized to determine the optimal fabrication parameters. Isoetch contours for HNA composition with 0% and 10% acetic acid concentrations were presented and a high nitric acid region was identified to produce microneedles with smooth surfaces. It is observed that an increase in window size indiscriminately increases the etch rate in both the vertical and lateral directions, while an increase in etching temperature beyond 35 °C causes the etching to become rapid and uncontrollable. Bath agitation and sample placement could be manipulated to achieve a higher vertical etch rate compared to its lateral counterpart in order to construct high aspect ratio microneedles. The Taguchi experiment performed suggests that a HNA composition of 2:7:1 (HF:HNO 3 :CH 3 COOH), window size of 500 µm and agitation rate of 450 RPM are optimal. Solid silicon microneedles with an average height of 159.4 µm, an average base width of 110.9 µm, an aspect ratio of 1.44, and a tip angle and diameter of 19.2° and 0.38 µm respectively were successfully fabricated. (paper)

Development of deep silicon plasma etching for 3D integration technology

Directory of Open Access Journals (Sweden)

Golishnikov А. А.

2014-02-01

Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

Science.gov (United States)

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-01-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

International Nuclear Information System (INIS)

Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

2016-01-01

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

Science.gov (United States)

Kunuku, Srinivasu; Sankaran, Kamatchi Jothiramalingam; Tsai, Cheng-Yen; Chang, Wen-Hao; Tai, Nyan-Hwa; Leou, Keh-Chyang; Lin, I-Nan

2013-08-14

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

Directory of Open Access Journals (Sweden)

Iatsunskyi I. R.

2013-12-01

Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

International Nuclear Information System (INIS)

Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

2016-01-01

The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

Nanosecond laser-induced back side wet etching of fused silica with a copper-based absorber liquid

Science.gov (United States)

Lorenz, Pierre; Zehnder, Sarah; Ehrhardt, Martin; Frost, Frank; Zimmer, Klaus; Schwaller, Patrick

2014-03-01

Cost-efficient machining of dielectric surfaces with high-precision and low-roughness for industrial applications is still challenging if using laser-patterning processes. Laser induced back side wet etching (LIBWE) using UV laser pulses with liquid heavy metals or aromatic hydrocarbons as absorber allows the fabrication of well-defined, nm precise, free-form surfaces with low surface roughness, e.g., needed for optical applications. The copper-sulphatebased absorber CuSO4/K-Na-Tartrate/NaOH/formaldehyde in water is used for laser-induced deposition of copper. If this absorber can also be used as precursor for laser-induced ablation, promising industrial applications combining surface structuring and deposition within the same setup could be possible. The etching results applying a KrF excimer (248 nm, 25 ns) and a Nd:YAG (1064 nm, 20 ns) laser are compared. The topography of the etched surfaces were analyzed by scanning electron microscopy (SEM), white light interferometry (WLI) as well as laser scanning microscopy (LSM). The chemical composition of the irradiated surface was studied by energy-dispersive X-ray spectroscopy (EDX) and Fourier transform infrared spectroscopy (FT-IR). For the discussion of the etching mechanism the laser-induced heating was simulated with finite element method (FEM). The results indicate that the UV and IR radiation allows micro structuring of fused silica with the copper-based absorber where the etching process can be explained by the laser-induced formation of a copper-based absorber layer.

Effect of CH3COOH on Hydrometallurgical Purification of Metallurgical-Grade Silicon Using HCl-HF Leaching

Science.gov (United States)

Tian, Chunjin; Lu, Haifei; Wei, Kuixian; Ma, Wenhui; Xie, Keqiang; Wu, Jijun; Lei, Yun; Yang, Bin; Morita, Kazuki

2018-04-01

The present study investigated the effects of adding CH3COOH to HCl and HF used to purify metallurgical-grade Si (MG-Si). After 6 h of leaching MG-Si with an acid mixture consisting of 4 mol L-1 HCl, 3 mol L-1 HF, and 3 mol L-1 CH3COOH at 348 K, the total impurity removal efficiency was 88.5%, exceeding the 81.5% removal efficiency obtained without addition of CH3COOH. The microstructural evolution of Si after etching with the two lixiviants indicated better dissolution of metal impurities in MG-Si when using the HCl-HF-CH3COOH mixture. Furthermore, the leaching kinetics of Fe using the HCl-HF and HCl-HF-CH3COOH mixtures were observed to depend on the interfacial chemical reactions.

Influence of rotation on multiphoton processes in HF

International Nuclear Information System (INIS)

Broeckhove, J.; Feyen, B.; Van Leuven, P.

1994-01-01

In this contribution, the authors are concerned with the role of rotational motion in multiphoton processes induced by a laser field of high intensity. The authors use the pseudospectral split operator method for the propagation of the quantum wave-function. The rotation is treated by decomposition of the HF wave-function in its angular momentum components

Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers.

Science.gov (United States)

Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

2018-05-29

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer (~ 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm 2 /V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

Future developments in etched track detectors for neutron dosimetry

International Nuclear Information System (INIS)

Tommasino, L.

1987-01-01

Many laboratories engaged in the field of personal neutron dosimetry are interested in developing better etching processes and improving the CR-39 detecting materials. To know how much effort must still be devoted to the development of etch track dosimetry, it is necessary to understand the advantages. limitations and degree of exploitation of the currently available techniques. So much has been learned about the chemical and electrochemical etching processes that an optimised combination of etching processes could make possible the elimination of many of the existing shortcomings. Limitations of etched track detectors for neutron dosimetry arise mainly because the registration occurs only on the detector surface. These damage type detectors are based on radiation induced chain scission processes in polymers, which result in hole-type tracks in solids. The converse approach, yet to be discovered, would be the development of cure-track detectors, where radiation induced cross linking between organic polymer chains could result in solid tracks in liquids. (author)

One-step synthesis of lightly doped porous silicon nanowires in HF/AgNO3/H2O2 solution at room temperature

International Nuclear Information System (INIS)

Bai, Fan; Li, Meicheng; Song, Dandan; Yu, Hang; Jiang, Bing; Li, Yingfeng

2012-01-01

One-step synthesis of lightly doped porous silicon nanowire arrays was achieved by etching the silicon wafer in HF/AgNO 3 /H 2 O 2 solution at room temperature. The lightly doped porous silicon nanowires (pNWs) have circular nanopores on the sidewall, which can emit strong green fluorescence. The surface morphologies of these nanowires could be controlled by simply adjusting the concentration of H 2 O 2 , which influences the distribution of silver nanoparticles (Ag NPs) along the nanowire axis. A mechanism based on Ag NPs-induced lateral etching of nanowires was proposed to explain the formation of pNWs. The controllable and widely applicable synthesis of pNWs will open their potential application to nanoscale photoluminescence devices. - Graphical abstract: The one-step synthesis of porous silicon nanowire arrays is achieved by chemical etching of the lightly doped p-type Si (100) wafer at room temperature. These nanowires exhibit strong green photoluminescence. SEM, TEM, HRTEM and photoluminescence images of pNWs. The scale bars of SEM, TEM HRTEM and photoluminescence are 10 μm, 20 nm, 10 nm, and 1 μm, respectively. Highlights: ► Simple one-step synthesis of lightly doped porous silicon nanowire arrays is achieved at RT. ► Etching process and mechanism are illustrated with etching model from a novel standpoint. ► As-prepared porous silicon nanowire emits strong green fluorescence, proving unique property.

Photonic jet μ-etching: from static to dynamic process

Science.gov (United States)

Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

2017-05-01

Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

Energy Technology Data Exchange (ETDEWEB)

Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2012-10-15

In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Precision Recess of AlGaN/GaN with Controllable Etching Rate Using ICP-RIE Oxidation and Wet Etching

NARCIS (Netherlands)

Sokolovskij, R.; Sun, J.; Santagata, F.; Iervolino, E.; Li, S.; Zhang, G.Y.; Sarro, P.M.; Zhang, G.Q.

2016-01-01

A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O₂ plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported

Dry etching technologies for reflective multilayer

Science.gov (United States)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Post-processing of fused silica and its effects on damage resistance to nanosecond pulsed UV lasers.

Science.gov (United States)

Ye, Hui; Li, Yaguo; Zhang, Qinghua; Wang, Wei; Yuan, Zhigang; Wang, Jian; Xu, Qiao

2016-04-10

HF-based (hydrofluoric acid) chemical etching has been a widely accepted technique to improve the laser damage performance of fused silica optics and ensure high-power UV laser systems at designed fluence. Etching processes such as acid concentration, composition, material removal amount, and etching state (etching with additional acoustic power or not) may have a great impact on the laser-induced damage threshold (LIDT) of treated sample surfaces. In order to find out the effects of these factors, we utilized the Taguchi method to determine the etching conditions that are helpful in raising the LIDT. Our results show that the most influential factors are concentration of etchants and the material etched away from the viewpoint of damage performance of fused silica optics. In addition, the additional acoustic power (∼0.6  W·cm-2) may not benefit the etching rate and damage performance of fused silica. Moreover, the post-cleaning procedure of etched samples is also important in damage performances of fused silica optics. Different post-cleaning procedures were, thus, experiments on samples treated under the same etching conditions. It is found that the "spraying + rinsing + spraying" cleaning process is favorable to the removal of etching-induced deposits. Residuals on the etched surface are harmful to surface roughness and optical transmission as well as laser damage performance.

Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

Energy Technology Data Exchange (ETDEWEB)

Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

2016-08-01

Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

Science.gov (United States)

Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

2006-01-01

In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

Science.gov (United States)

Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

2010-06-01

In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

Investigation of HF-plasma-treated soft x-ray optical elements

Science.gov (United States)

Eggenstein, F.; Krivenkov, M.; Rudolph, I.; Sertsu, M. G.; Sokolov, A.; Varykhalov, A.; Wolf, J.; Zeschke, T.; Schäfers, F.

2017-09-01

The contamination of optical elements (mirrors and gratings) with carbon still is an issue when using soft x-ray synchrotron radiation. With an in-house developed HF-plasma treatment we are able to decontaminate our optics in-situ from carbon very efficiently. The cleaning device, a simple Al-antenna, is mounted in situ inside the mirror- and grating vacuum chambers. A systematic study of the HF-plasma cleaning efficiency was performed acquired with in-situ and exsitu methods for monitoring: An atomic force microscope (AFM) and a scanning tunneling microscope (STM) were used before and after the cleaning process to determine the surface morphology and roughness. Reflectivity angular scans using the reflectometer at the BESSY-II Metrology Station [1-3] allowed to estimate the thickness of the remaining Clayer after different cleaning steps and thereby helped us to determine the etching rate. Reflection spectra measurements in the range of 200 eV - 900 eV show the complete removal of Carbon from the optics without contaminating it with any other elements due to the plasma treatment. The data show that the plasma process improves the reflectivity and reduces the roughness of the surface. In addition to that, the region of the optical surface where the carbon has been removed becomes passivated.

Application of the chemical vapor-etching in polycrystalline silicon solar cells

International Nuclear Information System (INIS)

Ben Rabha, M.; Saadoun, M.; Boujmil, M.F.; Bessais, B.; Ezzaouia, H.; Bennaceur, R.

2005-01-01

This paper reports a study of the application of chemical vapor-etching (CVE) for the rear surface and in the emitter of polycrystalline silicon (pc-Si) solar cells. The CVE technique consists of exposing pc-Si wafers to a mixture of HF/HNO 3 . This technique is used to groove the rear surface of the pc-Si wafers for acid vapors rich in HNO 3 (HNO 3 /HF > 1/4), in order to realize rear-buried metallic contacts (RBMC) and the formation of a porous silicon (PS) layer on the frontal surface of the cell for volume ratio of HNO 3 /HF = 1/7. A significant increase of the spectral response in the long wavelength range was observed when a RBMC is formed. This increase was attributed to the reduction of the effective thickness of the base of the cells and grain boundary Al gettering. The achievement of a PS layer on the emitter of the pc-Si cells passivates the surface and reduces the reflectivity. The dark I-V characteristics of pc-Si cells with emitter-based PS show an important reduction of the reverse current together with an improvement of the rectifying behaviour. The I-V characteristic under AM1.5 illumination shows an enhancement of both short circuit current density and fill factor. The internal quantum efficiency is improved, particularly in the short wavelengths region

Selective photochemical dry etching of compound semiconductors

International Nuclear Information System (INIS)

Ashby, C.I.H.

1988-01-01

When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

Preparation and analysis of amorphous carbon films deposited from (C{sub 6}H{sub 12})/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process

Energy Technology Data Exchange (ETDEWEB)

Lee, Seungmoo [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Won, Jaihyung; Choi, Jongsik [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Jang, Samseok [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); Jee, Yeonhong; Lee, Hyeondeok [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Byun, Dongjin, E-mail: dbyun@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of)

2011-08-01

Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C{sub 6}H{sub 12}) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 deg. C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 A/min to 2160 A/min, and dry etch rate was decreased from 2090 A/min to 1770 A/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 deg. C to 550 deg. C. XPS results of ACL deposited at 550 deg. C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 deg. C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 deg. C was 2.24 A, and that after cleaning in diluted HF solution (H{sub 2}O:HF = 200:1), SC1 (NH{sub 4}OH:H{sub 2}O{sub 2}:H{sub 2}O = 1:4:20) solution, and sulfuric acid solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2} = 6:1) was 2.28 A, 2.30 A and 7.34 A, respectively. The removal amount of ACL deposited at 550 deg. C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 A, 36 A and 110 A, respectively. These results demonstrated the viability of ACL deposited by PECVD from C{sub 6}H{sub 12} at 550 deg. C for application as the dry etch hard mask in fabrication of semiconductor devices.

Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil

NARCIS (Netherlands)

Nag, M.; Rockele, M.; Steudel, S.; Chasin, A.; Myny, K.; Bhoolokam, A.; Willegems, M.; Smout, S.; Vicca, P.; Ameys, M.; Ke, T.H.; Schols, S.; Genoe, J.; Steen, J.L. P.J. van der; Groeseneken, G.; Heremans, P.

2014-01-01

In this study, we report high-quality amorphous indiunrv-galiium-zinc-oxide (a-IGZO) thinfilm transistors (TFTs) fabricated on a polyethylene naphthalate foil using a new back-channel-etch (BCE) process flow. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related

Influence of high frequency ex-electric field on etching process and shape of pores for nuclear track film

International Nuclear Information System (INIS)

Chen Hui; Wang Yulan; Xu Shiping; Wang Jianchen

2011-01-01

To assess the details of the chemical etching process of polyethylene terephthalate (PET), the current signals during the whole etching process were recorded with the etching apparatus. The background-current was studied, which illustrated that it was mainly determined by the electric capacity of the etching system and was influenced by the thickness of the membrane but not by the temperature. According to the record of the current change during the etching process, it was found that the process can be divided into three phases. The influences of the existence and intensity of the ex-electric field on the breakthrough time and shape of pores were also studied. The existence of ex-electric field could shorten the breakthrough time and shape the pores more close to column. And these two phenomenons could be strengthened as the intensity of the electric field rose, and yet would reach a plateau when the intensity gets near 10 V/cm. (authors)

Singular Sheet Etching of Graphene with Oxygen Plasma

Institute of Scientific and Technical Information of China (English)

Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

2014-01-01

This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching(SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition,etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000?C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

Singular Sheet Etching of Graphene with Oxygen Plasma

Institute of Scientific and Technical Information of China (English)

Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

2014-01-01

This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

Etching Behavior of Aluminum Alloy Extrusions

Science.gov (United States)

Zhu, Hanliang

2014-11-01

The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

Energy Technology Data Exchange (ETDEWEB)

Kuboi, Nobuyuki, E-mail: Nobuyuki.Kuboi@jp.sony.com; Tatsumi, Tetsuya; Kinoshita, Takashi; Shigetoshi, Takushi; Fukasawa, Masanaga; Komachi, Jun; Ansai, Hisahiro [Device and Material Research Group, RDS Platform, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan)

2015-11-15

The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness, etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching

Chemically etched sharpened tip of transparent crystallized glass fibers with nonlinear optical Ba2TiSi2O8 nanocrystals

International Nuclear Information System (INIS)

Enomoto, Itaru; Benino, Yasuhiko; Komatsu, Takayuki; Fujiwara, Takumi

2007-01-01

Glass fibers with a diameter of ∼100 μm are drawn by just pulling up melts of 40BaO·20TiO 2 ·40SiO 2 glass, and transparent crystallized glass fibers consisting of nonlinear optical fresnoite Ba 2 TiSi 2 O 8 nanocrystals (particle size: ∼100-200 nm) are fabricated by crystallization of glass fibers. Precursor glass fibers and nanocrystallized glass fibers are etched chemically using a meniscus method, in which an etching solution of 0.1wt%-HF/hexane is used. Glass fibers with sharpened tips (e.g., the taper length is ∼L=200 μm and the tip angle is ∼θ=23deg) are obtained. It is found that etched nanocrystallized glass fibers also have sharpened tips (L=50 μm, θ=80deg). Compared with precursor glass fibers, nanocrystallized glass fibers show a high resistance against chemical etching in a 0.1 wt%HF solution. Although sharpened tips in nanocrystallized glass fibers do not have nanoscaled apertures, the present study suggests that nanocrystallized glass fibers showing second harmonic generations would have a potential for fiber-type light control optical devices. (author)

Silicon dioxide etching process for fabrication of micro-optics employing pulse-modulated electron-beam-excited plasma

International Nuclear Information System (INIS)

Takeda, Keigo; Ohta, Takayuki; Ito, Masafumi; Hori, Masaru

2006-01-01

Silicon dioxide etching process employing a pulse-modulated electron-beam-excited plasma (EBEP) has been developed for a fabrication process of optical micro-electro-mechanical systems (MEMSs). Nonplanar dielectric materials were etched by using self-bias induced by the electron beam generating the plasma. In order to investigate the effect of pulse modulation on electron beam, plasma diagnostics were carried out in the EBEP employing C 4 F 8 gas diluted with Ar gas by using a Langmuir single probe and time resolved optical emission spectroscopy. It was found that the pulse-modulated EBEP has an excellent potential to reduce the plasma-induced thermal damage on a photoresist film on a substrate to get the uniform etching and the anisotropic SiO 2 etching in comparison with the conventional EBEP. The pulse-modulated EBEP enabled us to get the high etch rate of SiO 2 of 375 nm/min without any additional bias power supply. Furthermore, the microfabrication on the core area of optical fiber was realized. These results indicate that the pulse-modulated EBEP will be a powerful tool for the application to optical MEMS process

Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Owen, Jorj Ian

2011-07-01

O:Al films can be increased up to 76 cm{sup 2}/Vs by annealing at high temperatures. Further, it is observed that this annealing process does not affect the morphology of the film and increases the total transmission in the solar cell relevant portion of the spectrum. Accelerated aging in a damp-heat is shown to affect the mobility primarily, and is thus likely related to poor transport across grain boundaries. Using deuterium as an isotopic marker, it is observed that the deuterium uptake was fairly linear with time and penetrated the whole film within 24 hours. Additionally, the deuterium is quickly replaced by hydrogen upon damp-heat treatment in water. It is concluded that the electrical degradation is related to the penetration of water via grain boundaries, and that the bulk of the reactions causing this degradation are fairly weak, such as the formation of zinc hydroxide. Additionally, the annealed high-mobility ZnO:Al films prove to be very stable in the damp-heat environment, exhibiting electron mobilities above 70 cm{sup 2}/Vs after 1000 hours of exposure. The initial points of attack during HCl etching of ZnO:Al, and the long-term etch evolution are shown to be related to certain grain boundaries built into the film during growth. The density of craters from an HCl etch is controllable by altering the temperature and concentration of the etching solution. It is further demonstrated that most acids exhibit etching behavior similar to that of HCl. Hydrofluoric acid (HF), however, exhibits unique etching characteristics with higher crater densities and sharper features. The crater density and shape are also shown to be controllable by etching in various concentrations of HF and in various mixtures of HF and HCl. Additional etching experiments are made to develop a polycrystalline ZnO:Al etching model. It is shown that basic and acidic solutions attack the same points on a polycrystalline ZnO:Al sample. The dependence of crater density on the acid concentration

Wafer-Level Membrane-Transfer Process for Fabricating MEMS

Science.gov (United States)

Yang, Eui-Hyeok; Wiberg, Dean

2003-01-01

A process for transferring an entire wafer-level micromachined silicon structure for mating with and bonding to another such structure has been devised. This process is intended especially for use in wafer-level integration of microelectromechanical systems (MEMS) that have been fabricated on dissimilar substrates. Unlike in some older membrane-transfer processes, there is no use of wax or epoxy during transfer. In this process, the substrate of a wafer-level structure to be transferred serves as a carrier, and is etched away once the transfer has been completed. Another important feature of this process is that two electrodes constitutes an electrostatic actuator array. An SOI wafer and a silicon wafer (see Figure 1) are used as the carrier and electrode wafers, respectively. After oxidation, both wafers are patterned and etched to define a corrugation profile and electrode array, respectively. The polysilicon layer is deposited on the SOI wafer. The carrier wafer is bonded to the electrode wafer by using evaporated indium bumps. The piston pressure of 4 kPa is applied at 156 C in a vacuum chamber to provide hermetic sealing. The substrate of the SOI wafer is etched in a 25 weight percent TMAH bath at 80 C. The exposed buried oxide is then removed by using 49 percent HF droplets after an oxygen plasma ashing. The SOI top silicon layer is etched away by using an SF6 plasma to define the corrugation profile, followed by the HF droplet etching of the remaining oxide. The SF6 plasma with a shadow mask selectively etches the polysilicon membrane, if the transferred membrane structure needs to be patterned. Electrostatic actuators with various electrode gaps have been fabricated by this transfer technique. The gap between the transferred membrane and electrode substrate is very uniform ( 0.1 m across a wafer diameter of 100 mm, provided by optimizing the bonding control). Figure 2 depicts the finished product.

Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

International Nuclear Information System (INIS)

Su, Y.K.; Chang, S.J.; Kuan, T.M.; Ko, C.H.; Webb, J.B.; Lan, W.H.; Cherng, Y.T.; Chen, S.C.

2004-01-01

Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

Etching and anti-etching strategy for sensitive colorimetric sensing of H2O2 and biothiols based on silver/carbon nanomaterial.

Science.gov (United States)

Hou, Wenli; Liu, Xiaoying; Lu, Qiujun; Liu, Meiling; Zhang, Youyu; Yao, Shouzhuo

2018-02-01

In this paper, the colorimetric sensing of H 2 O 2 related molecules and biothiols based on etching and anti-etching strategy was firstly proposed. Ag/carbon nanocomposite (Ag/C NC) was served as the sensing nanoprobe, which was synthesized via carbon dots (C-dots) as the reductant and stabilizer. The characteristic surface plasmon resonance (SPR) absorbance of Ag nanoparticles (AgNPs) was sensitive to the amount of hydrogen peroxide (H 2 O 2 ). It exhibited strong optical responses to H 2 O 2 with the solution colour changing from yellow to nearly colourless, which is resulted from the etching of Ag by H 2 O 2 . The sensing platform was further extended to detect H 2 O 2 related molecules such as lactate in coupling with the specific catalysis oxidation of L-lactate by lactate oxidase (LOx) and formation of H 2 O 2 . It provides wide linear range for detecting H 2 O 2 in 0.1-80μM and 80-220μM with the detection limit as low as 0.03μM (S/N=3). In the presence of biothiols, the etching from the H 2 O 2 can be hampered. Other biothiols exhibit anti-etching effects well. The strategy works well in detecting of typical biothiols including cysteine (Cys), homocysteine (Hcy) and glutathione (GSH). Thus, a simple colorimetric strategy for sensitive detection of H 2 O 2 and biothiols is proposed. It is believed that the colorimetric sensor based on etching and anti-etching strategy can be applied in other systems in chemical and biosensing areas. Copyright © 2017 Elsevier B.V. All rights reserved.

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

Science.gov (United States)

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-06-17

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

International Nuclear Information System (INIS)

Yurchuk, Ekaterina

2015-01-01

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Level Set Approach to Anisotropic Wet Etching of Silicon

Directory of Open Access Journals (Sweden)

Branislav Radjenović

2010-05-01

Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

Investigating the process of white etching crack initiation in bearing steel

Energy Technology Data Exchange (ETDEWEB)

Gould, Benjamin; Greco, Aaron

2016-04-01

White etching cracks (WECs) have been identified as a dominant mode of premature failure within wind turbine gearbox bearings. Though WECs have been reported in the field for over a decade, the conditions leading to WECs, and the process by which this failure culminates, are both highly debated. In previously published work, the generation of WECs on a benchtop scale was linked to sliding at the surface of the test sample, it was also postulated that the generation of WECs was dependent on the cumulative energy that had been applied to the sample over the entirety of the test. In this paper, a three ring on roller bench top test rig is used to systematically alter the cumulative energy that a sample experiences through changes in normal load, sliding, and run time, in an attempt to correlate cumulative energy with the formation of WECs. It was determined that, in the current test setup, the presence of WECs can be predicted by this energy criterion. The authors then used this information to study the process by which WECs initiate. Lastly, it was found that, under the current testing conditions, the formation of a dark etching microstructure precedes the formation of a crack, and a crack precedes the formation of white etching microstructure.

Superhydrophobic coatings for aluminium surfaces synthesized by chemical etching process

Directory of Open Access Journals (Sweden)

Priya Varshney

2016-10-01

Full Text Available In this paper, the superhydrophobic coatings on aluminium surfaces were prepared by two-step (chemical etching followed by coating and one-step (chemical etching and coating in a single step processes using potassium hydroxide and lauric acid. Besides, surface immersion time in solutions was varied in both processes. Wettability and surface morphologies of treated aluminium surfaces were characterized using contact angle measurement technique and scanning electron microscopy, respectively. Microstructures are formed on the treated aluminium surfaces which lead to increase in contact angle of the surface (>150°. Also on increasing immersion time, contact angle further increases due to increase in size and depth of microstructures. Additionally, these superhydrophobic coatings show excellent self-cleaning and corrosion-resistant behavior. Water jet impact, floatation on water surface, and low temperature condensation tests assert the excellent water-repellent nature of coatings. Further, coatings are to be found mechanically, thermally, and ultraviolet stable. Along with, these coatings are found to be excellent regeneration ability as verified experimentally. Although aforesaid both processes generate durable and regenerable superhydrophobic aluminium surfaces with excellent self-cleaning, corrosion-resistant, and water-repellent characteristics, but one-step process is proved more efficient and less time consuming than two-step process and promises to produce superhydrophobic coatings for industrial applications.

Fabrication of low reflective nanopore-type black Si layer using one-step Ni-assisted chemical etching for Si solar cell application

Science.gov (United States)

Takaloo, AshkanVakilipour; Kolahdouz, Mohammadreza; Poursafar, Jafar; Es, Firat; Turan, Rasit; Ki-Joo, Seung

2018-03-01

Nanotextured Si fabricated through metal-assisted chemical etching (MACE) technique exhibits a promising potential for producing antireflective layer for photovoltaic (PV) application. In this study, a novel single-step nickel (Ni) assisted etching technique was applied to produce an antireflective, nonporous Si (black Si) in an aqueous solution containing hydrofluoric acid (HF), hydrogen peroxide (H2O2) and NiSO4 at 40 °C. Field emission scanning electron microscope was used to characterize different morphologies of the textured Si. Optical reflection measurements of samples were carried out to compare the reflectivity of different morphologies. Results indicated that vertical as well as horizontal pores with nanosized diameters were bored in the Si wafer after 1 h treatment in the etching solution containing different molar ratios of H2O2 to HF. Increasing H2O2 concentration in electrochemical etching solution had a considerable influence on the morphology due to higher injection of positive charges from Ni atoms onto the Si surface. Optimized concentration of H2O2 led to formation of an antireflective layer with 2.1% reflectance of incident light.

The isobutylene-isobutane alkylation process in liquid HF revisited.

Science.gov (United States)

Esteves, P M; Araújo, C L; Horta, B A C; Alvarez, L J; Zicovich-Wilson, C M; Ramírez-Solís, A

2005-07-07

Details on the mechanism of HF catalyzed isobutylene-isobutane alkylation were investigated. On the basis of available experimental data and high-level quantum chemical calculations, a detailed reaction mechanism is proposed taking into account solvation effects of the medium. On the basis of our computational results, we explain why the density of the liquid media and stirring rates are the most important parameters to achieve maximum yield of alkylate, in agreement with experimental findings. The ab initio Car-Parrinello molecular dynamics calculations show that isobutylene is irreversibly protonated in the liquid HF medium at higher densities, leading to the ion pair formation, which is shown to be a minimum on the potential energy surface after optimization using periodic boundary conditions. The HF medium solvates preferentially the fluoride anion, which is found as solvated [FHF](-) or solvated F(-.)(HF)(3). On the other hand, the tert-butyl cation is weakly solvated, where the closest HF molecules appear at a distance of about 2.9 Angstrom with the fluorine termination of an HF chain.

Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

International Nuclear Information System (INIS)

Geyer, Nadine; Wollschläger, Nicole; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Fuhrmann, Bodo; Leipner, Hartmut S; Jungmann, Marco; Krause-Rehberg, Reinhard

2015-01-01

A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H_2O_2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology. (paper)

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

Science.gov (United States)

Vojak, B. A.; Alley, G. D.

1983-08-01

Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

Densification and properties of HfB2 based materials

International Nuclear Information System (INIS)

Sonber, J.K.; Ch Murthy, T.S.R.; Bedse, R.D.; Subramanian, C.; Kumar, Sunil; Fotedar, R.K.; Krishnamurthy, N.; Suri, A.K.

2011-01-01

This paper presents the results of investigation carried out on densification and properties of HfB 2 based materials. Densification study of HfB 2 with and without sinter additive was carried out by hot pressing. TiSi 2 and CrSi 2 were used as sinter additive. Monolithic HfB 2 was densified to only 80%ρ th at 1850 deg C with a pressure of 35 MPa. Addition of 10 wt% TiSi 2 resulted in a density of 95% TD at a relatively low temperature of 1650 deg C and a low pressure of 20 MPa. Addition of 10% CrSi 2 resulted in a density of 99% TD at the same operating conditions. All the samples were characterized by SEM/EDS and mechanical property measurement. (author)

Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors

Science.gov (United States)

2017-12-01

release stack. Recently, this technique has been refined with band engineering within the release layer7 and extended to the point where it has been...liftoff. Mesas with a 200-μm diameter are lithographically defined and etched down to a depth of approximately 450 nm using a plasma etching chemistry ...etch chemistry , bonding, and other materials processing vary, but the setup created for this project can be applied to others as well. Approved

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

Directory of Open Access Journals (Sweden)

Seon-Geun Oh

2014-01-01

Full Text Available The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz, pressure, and gas flow ratio. For the SiNx:H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES intensity of atomic fluorine (685.1 nm and 702.89 nm and the voltages VH and VL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine (I(F and the square root of the voltages (Vh+Vl on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

Fiscal 2000 achievement report on the investigation of alternative gas system and process technologies for dry etching in electronic device manufacturing; 2000 nendo denshi device seizo process de shiyosuru etching gas no daitai gas system oyobi daitai process no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Efforts are made to develop technologies for saving PFC (perfluoro-compound) and conserving energy in semiconductor manufacturing processes, in particular, in the layer insulation film (SiO{sub 2}) dry etching process. Activities are conducted in the five fields of (1) research and development of technologies for reducing the amount of etching gas consumption, (2) development of a dry etching technology using alternative gas, (3) development of a dry etching technology using a low dielectric constant layer insulation film, (4) research and development of novel wiring structures and a method for fabricating the same, and (5) re-entrusted studies. Conducted in field (5) are studies of novel alternative gas - solid sources to substitute PFC, theory design technologies for low dielectric constant organic macromolecules, low dielectric constant material film fabrication by CVD (chemical vapor deposition), and technology for optical wiring inside chips. In field (2), studies are conducted of low GWP (global warming potential) alternative PFC gas aided etching and decomposition prevention technologies for reduction in PFC emissions, and it is made clear that C{sub 4}F{sub 6} performs excellently as an etchant. (NEDO)

Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

Science.gov (United States)

Naddaf, M.

2017-01-01

Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

More vertical etch profile using a Faraday cage in plasma etching

Science.gov (United States)

Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

1999-05-01

Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

Fabrication mechanism of friction-induced selective etching on Si(100) surface.

Science.gov (United States)

Guo, Jian; Song, Chenfei; Li, Xiaoying; Yu, Bingjun; Dong, Hanshan; Qian, Linmao; Zhou, Zhongrong

2012-02-23

As a maskless nanofabrication technique, friction-induced selective etching can easily produce nanopatterns on a Si(100) surface. Experimental results indicated that the height of the nanopatterns increased with the KOH etching time, while their width increased with the scratching load. It has also found that a contact pressure of 6.3 GPa is enough to fabricate a mask layer on the Si(100) surface. To understand the mechanism involved, the cross-sectional microstructure of a scratched area was examined, and the mask ability of the tip-disturbed silicon layer was studied. Transmission electron microscope observation and scanning Auger nanoprobe analysis suggested that the scratched area was covered by a thin superficial oxidation layer followed by a thick distorted (amorphous and deformed) layer in the subsurface. After the surface oxidation layer was removed by HF etching, the residual amorphous and deformed silicon layer on the scratched area can still serve as an etching mask in KOH solution. The results may help to develop a low-destructive, low-cost, and flexible nanofabrication technique suitable for machining of micro-mold and prototype fabrication in micro-systems.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

Energy Technology Data Exchange (ETDEWEB)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

2015-03-16

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

International Nuclear Information System (INIS)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

2015-01-01

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes

Consideration of correlativity between litho and etching shape

Science.gov (United States)

Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

2012-03-01

We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer made by a lithography process. Therefore, this method measures the characteristic of the shape of the wafer pattern by the lithography process and can predict the hotspot pattern shape by the etching process. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used wafer CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and lithography management, and this has a big impact on the semiconductor market that centers on the semiconductor business. 2-dimensional shape of wafer quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. In this study, we conducted experiments for correlation method of the pattern (Measurement Based Contouring) as two-dimensional litho and etch evaluation technique. That is, observation of the identical position of a litho and etch was considered. It is possible to analyze variability of the edge of the same position with high precision.

Facile fabrication of superhydrophobic surfaces from austenitic stainless steel (AISI 304) by chemical etching

Science.gov (United States)

Kim, Jae-Hun; Mirzaei, Ali; Kim, Hyoun Woo; Kim, Sang Sub

2018-05-01

Stainless steels are among the most common engineering materials and are used extensively in humid areas. Therefore, it is important that these materials must be robust to humidity and corrosion. This paper reports the fabrication of superhydrophobic surfaces from austenitic stainless steel (type AISI 304) using a facile two-step chemical etching method. In the first step, the stainless steel plates were etched in a HF solution, followed by a fluorination process, where they showed a water contact angle (WCA) of 166° and a sliding angle of 5° under the optimal conditions. To further enhance the superhydrophobicity, in the second step, they were dipped in a 0.1 wt.% NaCl solution at 100 °C, where the WCA was increased to 168° and the sliding angle was decreased to ∼2°. The long-term durability of the fabricated superhydrophobic samples for 1 month storage in air and water was investigated. The potential applicability of the fabricated samples was demonstrated by the excellent superhydrophobicity after 1 month. In addition, the self-cleaning properties of the fabricated superhydrophobic surface were also demonstrated. This paper outlines a facile, low-cost and scalable chemical etching method that can be adopted easily for large-scale purposes.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yurchuk, Ekaterina

2015-02-06

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Low-Frequency Waves in HF Heating of the Ionosphere

Science.gov (United States)

Sharma, A. S.; Eliasson, B.; Milikh, G. M.; Najmi, A.; Papadopoulos, K.; Shao, X.; Vartanyan, A.

2016-02-01

Ionospheric heating experiments have enabled an exploration of the ionosphere as a large-scale natural laboratory for the study of many plasma processes. These experiments inject high-frequency (HF) radio waves using high-power transmitters and an array of ground- and space-based diagnostics. This chapter discusses the excitation and propagation of low-frequency waves in HF heating of the ionosphere. The theoretical aspects and the associated models and simulations, and the results from experiments, mostly from the HAARP facility, are presented together to provide a comprehensive interpretation of the relevant plasma processes. The chapter presents the plasma model of the ionosphere for describing the physical processes during HF heating, the numerical code, and the simulations of the excitation of low-frequency waves by HF heating. It then gives the simulations of the high-latitude ionosphere and mid-latitude ionosphere. The chapter also briefly discusses the role of kinetic processes associated with wave generation.

Hydrogen iodide-based dry etching of GaAs, InP, and related compounds

International Nuclear Information System (INIS)

Pearton, S.J.; Chakrabarti, U.K.; Hobson, W.S.; Abernathy, C.R.; Katz, A.; Ren, F.; Fullowan, T.R.; Perley, A.P.

1992-01-01

In this paper HI/H 2 /Ar discharges are shown to be universal etchants for III-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At low dc Self bias (-V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000 Angstrom · min -1 are possible for high HI percentages in the discharges, whereas rates greater than 1 μm · min -1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH 4 /H 2 Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H 2 /Ar. Auger electron spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As a result, photoluminescent intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH 4 -based dry etching

Developing barbed microtip-based electrode arrays for biopotential measurement.

Science.gov (United States)

Hsu, Li-Sheng; Tung, Shu-Wei; Kuo, Che-Hsi; Yang, Yao-Joe

2014-07-10

This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS) polymer, and a polyvinylchloride (PVC) film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG) and electrocardiography (ECG) recordings using these electrode prototypes were also demonstrated.

Developing Barbed Microtip-Based Electrode Arrays for Biopotential Measurement

Directory of Open Access Journals (Sweden)

Li-Sheng Hsu

2014-07-01

Full Text Available This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS polymer, and a polyvinylchloride (PVC film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG and electrocardiography (ECG recordings using these electrode prototypes were also demonstrated.

Mechanisms of LiCoO2 Cathode Degradation by Reaction with HF and Protection by Thin Oxide Coatings.

Science.gov (United States)

Tebbe, Jonathon L; Holder, Aaron M; Musgrave, Charles B

2015-11-04

Reactions of HF with uncoated and Al and Zn oxide-coated surfaces of LiCoO2 cathodes were studied using density functional theory. Cathode degradation caused by reaction of HF with the hydroxylated (101̅4) LiCoO2 surface is dominated by formation of H2O and a LiF precipitate via a barrierless reaction that is exothermic by 1.53 eV. We present a detailed mechanism where HF reacts at the alumina coating to create a partially fluorinated alumina surface rather than forming AlF3 and H2O and thus alumina films reduce cathode degradation by scavenging HF and avoiding H2O formation. In contrast, we find that HF etches monolayer zinc oxide coatings, which thus fail to prevent capacity fading. However, thicker zinc oxide films mitigate capacity loss by reacting with HF to form a partially fluorinated zinc oxide surface. Metal oxide coatings that react with HF to form hydroxyl groups over H2O, like the alumina monolayer, will significantly reduce cathode degradation.

Chemically etched fiber tips for near-field optical microscopy: a process for smoother tips.

Science.gov (United States)

Lambelet, P; Sayah, A; Pfeffer, M; Philipona, C; Marquis-Weible, F

1998-11-01

An improved method for producing fiber tips for scanning near-field optical microscopy is presented. The improvement consists of chemically etching quartz optical fibers through their acrylate jacket. This new method is compared with the previous one in which bare fibers were etched. With the new process the meniscus formed by the acid along the fiber does not move during etching, leading to a much smoother surface of the tip cone. Subsequent metallization is thus improved, resulting in better coverage of the tip with an aluminum opaque layer. Our results show that leakage can be avoided along the cone, and light transmission through the tip is spatially limited to an optical aperture of a 100-nm dimension.

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Science.gov (United States)

Pang, Hua; Deng, Ning

2014-10-01

The electroforming process of Ti/HfOx stacked RRAM devices is removed via the combination of low temperature atomic layer deposition and post metal annealing. The Pt/Ti/HfOx/Pt RRAM devices show a forming-free bipolar resistive switching behavior. By x-ray photoelectron emission spectroscopy analysis, it is found that there are many oxygen vacancies and nonlattice oxygen pre-existing in the HfOx layer that play a key role in removing the electroforming process. In addition, when the thickness ratio of the Ti and HfOx layer is 1, the uniformity of the switching parameters of Pt/Ti/HfOx/Pt devices is significantly improved. The OFF/ON window maintains about 100 at the read voltage of 0.1 V.

Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction

Science.gov (United States)

Dong, Zhipeng; Cao, Xi; Wu, Tong; Guo, Jing

2018-03-01

Ferroelectric tunnel junctions (FTJs) have been intensively explored for future low power data storage and information processing applications. Among various ferroelectric (FE) materials studied, HfO2 and H0.5Zr0.5O2 (HZO) have the advantage of CMOS process compatibility. The validity of the simple effective mass approximation, for describing the tunneling process in these materials, is examined by computing the complex band structure from ab initio simulations. The results show that the simple effective mass approximation is insufficient to describe the tunneling current in HfO2 and HZO materials, and quantitative accurate descriptions of the complex band structures are indispensable for calculation of the tunneling current. A compact k . p Hamiltonian is parameterized to and validated by ab initio complex band structures, which provides a method for efficiently and accurately computing the tunneling current in HfO2 and HZO. The device characteristics of a metal/FE/metal structure and a metal/FE/semiconductor (M-F-S) structure are investigated by using the non-equilibrium Green's function formalism with the parameterized effective Hamiltonian. The result shows that the M-F-S structure offers a larger resistance window due to an extra barrier in the semiconductor region at off-state. A FTJ utilizing M-F-S structure is beneficial for memory design.

Effects of HfB2 and HfN Additions on the Microstructures and Mechanical Properties of TiB2-Based Ceramic Tool Materials

Science.gov (United States)

An, Jing; Song, Jinpeng; Liang, Guoxing; Gao, Jiaojiao; Xie, Juncai; Cao, Lei; Wang, Shiying; Lv, Ming

2017-01-01

The effects of HfB2 and HfN additions on the microstructures and mechanical properties of TiB2-based ceramic tool materials were investigated. The results showed that the HfB2 additive not only can inhibit the TiB2 grain growth but can also change the morphology of some TiB2 grains from bigger polygons to smaller polygons or longer ovals that are advantageous for forming a relatively fine microstructure, and that the HfN additive had a tendency toward agglomeration. The improvement of flexural strength and Vickers hardness of the TiB2-HfB2 ceramics was due to the relatively fine microstructure; the decrease of fracture toughness was ascribed to the formation of a weaker grain boundary strength due to the brittle rim phase and the poor wettability between HfB2 and Ni. The decrease of the flexural strength and Vickers hardness of the TiB2-HfN ceramics was due to the increase of defects such as TiB2 coarse grains and HfN agglomeration; the enhancement of fracture toughness was mainly attributed to the decrease of the pore number and the increase of the rim phase and TiB2 coarse grains. The toughening mechanisms of TiB2-HfB2 ceramics mainly included crack bridging and transgranular fracture, while the toughening mechanisms of TiB2-HfN ceramics mainly included crack deflection, crack bridging, transgranular fracture, and the core-rim structure. PMID:28772821

Effects of HfB2 and HfN Additions on the Microstructures and Mechanical Properties of TiB2-Based Ceramic Tool Materials

Directory of Open Access Journals (Sweden)

Jing An

2017-04-01

Full Text Available The effects of HfB2 and HfN additions on the microstructures and mechanical properties of TiB2-based ceramic tool materials were investigated. The results showed that the HfB2 additive not only can inhibit the TiB2 grain growth but can also change the morphology of some TiB2 grains from bigger polygons to smaller polygons or longer ovals that are advantageous for forming a relatively fine microstructure, and that the HfN additive had a tendency toward agglomeration. The improvement of flexural strength and Vickers hardness of the TiB2-HfB2 ceramics was due to the relatively fine microstructure; the decrease of fracture toughness was ascribed to the formation of a weaker grain boundary strength due to the brittle rim phase and the poor wettability between HfB2 and Ni. The decrease of the flexural strength and Vickers hardness of the TiB2-HfN ceramics was due to the increase of defects such as TiB2 coarse grains and HfN agglomeration; the enhancement of fracture toughness was mainly attributed to the decrease of the pore number and the increase of the rim phase and TiB2 coarse grains. The toughening mechanisms of TiB2-HfB2 ceramics mainly included crack bridging and transgranular fracture, while the toughening mechanisms of TiB2-HfN ceramics mainly included crack deflection, crack bridging, transgranular fracture, and the core-rim structure.

Overview Of Dry-Etch Techniques

Science.gov (United States)

Salzer, John M.

1986-08-01

With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

Energy Technology Data Exchange (ETDEWEB)

Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

2006-12-01

This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

Modeling of block copolymer dry etching for directed self-assembly lithography

Science.gov (United States)

Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

Characteristics of SiO{sub 2} etching with a C{sub 4}F{sub 8}/Ar/CHF{sub 3}/O{sub 2} gas mixture in 60-MHz/2-MHz dual-frequency capacitively coupled plasmas

Energy Technology Data Exchange (ETDEWEB)

Jeon, M. H.; Kang, S. K.; Park, J. Y.; Yeom, G. Y. [Sungkyunkwan University, Suwon (Korea, Republic of)

2011-11-15

Nanoscale SiO{sub 2} contact holes were etched by using C{sub 4}F{sub 8}/CHF{sub 3}/O{sub 2}/Ar gas mixtures in dual frequency capacitively coupled plasmas (DF-CCPs) where a 60-MHz source power was applied to the top electrode while a 2-MHz bias power was applied to the bottom electrode. The initial increase in the CHF{sub 3} gas flow rate at a fixed CHF{sub 3}+O{sub 2} flow rate increased the SiO{sub 2} etch rate as well as SiO{sub 2} etch selectivity over that of the amorphous carbon layer (ACL). When the high-frequency (HF) power was increased both SiO{sub 2} etch rate and the etch selectivity over ACL were increased. For a 300 W/500 W power ratio of 60-MHz HF power/ 2-MHz low-freqeuncy (LF) and a gas mixture of Ar (140 sccm) /C{sub 4}F{sub 8} (30 sccm) /CHF{sub 3} (25 sccm) /O{sub 2} (5 sccm) while maintaining 20 mTorr, an anisotropic etch profile with an SiO{sub 2} etch rate of 3350 A/min and an etch selectivity of higher than 6 over ACL could be obtained.

Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

International Nuclear Information System (INIS)

Kagilik, Ahmed S.

2014-01-01

As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer removal using Trifluormethane/Sulfur Hexafluoride (CHF 3 / SF 6 ) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. The dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a significant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer film which is formed during the PSG etching using both oxygen and hydrogen gases. By applying an additional cleaning step, the polymer film deposited on the silicon wafer surface after PSG etching is eliminated. The effect of different plasma cleaning conditions on solar cell performance is investigated. After optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in efficiency of 0.6% absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O 2 /H 2 post cleaning treatment.(author)

HF-voltage testing of accelerating system functional model

International Nuclear Information System (INIS)

Gladkov, A.V.; Stepanov, V.B.

1989-01-01

Owing to ambiguity in interpreting the notion of the electron strength of the operating HF device in an acceleator a technique of measurements and result processing, based on statistical analysis of the data is suggested. Experimental testing on electric strength of structures with HF focusing was carried out using a bench in the form of a cylindrical vacuum container inside which a double H-resonator with HF quadrupole electrodes without surface modulation was installed. The dependences obtained permit to evaluate the bahaviour of the HF device from the viewpoint of electric strength and radiation hazard for the whole range of possible values of voltage on the basis of data on the frequency of breakdowns and radiation situation only in one experimental point. 12 refs.; 8 figs

Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

2016-07-15

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si

Nanoscale silver-assisted wet etching of crystalline silicon for anti-reflection surface textures.

Science.gov (United States)

Li, Rui; Wang, Shuling; Chuwongin, Santhad; Zhou, Weidong

2013-01-01

We report here an electro-less metal-assisted chemical etching (MacEtch) process as light management surface-texturing technique for single crystalline Si photovoltaics. Random Silver nanostructures were formed on top of the Si surface based on the thin film evaporation and annealing process. Significant reflection reduction was obtained from the fabricated Si sample, with approximately 2% reflection over a wide spectra range (300 to 1050 nm). The work demonstrates the potential of MacEtch process for anti-reflection surface texture fabrication of large area, high efficiency, and low cost thin film solar cell.

ICP dry etching ITO to improve the performance of GaN-based LEDs

International Nuclear Information System (INIS)

Meng Lili; Chen Yixin; Ma Li; Liu Zike; Shen Guangdi

2011-01-01

In order to improve the light efficiency of the conventional GaN-based light-emitting diodes (LEDs), the indium tin oxide (ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film's corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5 μm width, i.e. 6.43%-1/3 of ITO film's area. An optimized simple process, i.e. inductively couple plasma (ICP), was introduced to solve this problem. The ICP process not only prevented the ITO film from lateral corrosion, but also improved the LED's light intensity and device performance. The edge of the ITO film by ICP dry etching is steep, and the areas of ITO film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip's lop values increase by 45.9% at most. (semiconductor devices)

Etching in microsystem technology

CERN Document Server

Kohler, Michael

2008-01-01

Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

International Nuclear Information System (INIS)

Dajko, G.

1991-01-01

Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

Development of etched nuclear tracks

International Nuclear Information System (INIS)

Somogyi, G.

1980-01-01

The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

Development of etched nuclear tracks

International Nuclear Information System (INIS)

Somogyi, G.

1979-01-01

The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching

Directory of Open Access Journals (Sweden)

Yichuan Dai

2017-06-01

Full Text Available Maskless etching approaches such as microdischarges and atmospheric pressure plasma jets (APPJs have been studied recently. Nonetheless, a simple, long lifetime, and efficient maskless etching method is still a challenge. In this work, a separated type maskless etching system based on atmospheric pressure He/O2 plasma jet and microfabricated Micro Electro Mechanical Systems (MEMS nozzle have been developed with advantages of simple-structure, flexibility, and parallel processing capacity. The plasma was generated in the glass tube, forming the micron level plasma jet between the nozzle and the surface of polymer. The plasma microjet was capable of removing photoresist without masks since it contains oxygen reactive species verified by spectra measurement. The experimental results illustrated that different features of microholes etched by plasma microjet could be achieved by controlling the distance between the nozzle and the substrate, additive oxygen ratio, and etch time, the result of which is consistent with the analysis result of plasma spectra. In addition, a parallel etching process was also realized by plasma microjets array.

3D memory: etch is the new litho

Science.gov (United States)

Petti, Christopher

2018-03-01

This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

Aerosol chemistry in Titan's ionosphere: simultaneous growth and etching processes

Science.gov (United States)

Carrasco, Nathalie; Cernogora, Guy; Jomard, François; Etcheberry, Arnaud; Vigneron, Jackie

2016-10-01

Since the Cassini-CAPS measurements, organic aerosols are known to be present and formed at high altitudes in the diluted and partially ionized medium that is Titan's ionosphere [1]. This unexpected chemistry can be further investigated in the laboratory with plasma experiments simulating the complex ion-neutral chemistry starting from N2-CH4 [2]. Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan's atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan's atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan's atmosphere.The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions is explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes [3]. The impact for our understanding of Titan's aerosols chemical composition is important. Our study shows that chemical growth and etching process are simultaneously at stake in Titan's ionosphere. The more the aerosols stay in the ionosphere, the more graphitized they get through etching process. In order to infer Titan's aerosols composition, our work highlights a need for constraints on the residence time of aerosols in Titan's ionosphere. [1] Waite et al. (2009) Science , 316, p. 870[2] Szopa et al. (2006) PSS, 54, p. 394[3] Carrasco et al. (2016) PSS, 128, p. 52

Structural and optical properties of vapor-etched porous GaAs

Energy Technology Data Exchange (ETDEWEB)

Smida, A.; Laatar, F. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Hassen, M., E-mail: mhdhassen@yahoo.fr [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Applied Science and Technology of Sousse, City Taffala (Ibn Khaldun), 4003 Sousse (Tunisia); Ezzaouia, H. [Photovoltaic Laboratory, Centre for Research and Technology Energy, Tourist Route Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2016-08-15

This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO{sub 3} as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

Structural and optical properties of vapor-etched porous GaAs

International Nuclear Information System (INIS)

Smida, A.; Laatar, F.; Hassen, M.; Ezzaouia, H.

2016-01-01

This paper consists to present first results concerning the structure of porous GaAs layer (por-GaAs-L) prepared by using HF/HNO 3 as acidic solution in vapor etching (VE) method. In order to clarify this method, we detail here its principle and explain how por-GaAs-Ls are formed, taking into account the influencing of the exposure time of the GaAs substrate to the acid vapor. The etched GaAs layers have been investigated by UV–visible and PL analysis. One porous layer was performed to be characterised by Atomic Force Microscopy (AFM), FTIR spectroscopy, and X-Ray Diffraction (XRD). The porous structure was constituted by a nanocrystals with an average size about 6 nm. These nanocrystals were calculated from XRD peak using Scherrer's formula, AFM imaging, and also by using effective mass approximation model from effective band gap. - Highlights: • Porous GaAs layer was prepared by using Vapor etching (VE) method. • Effect of VE duration on the microstructural optical properties of the GaAs substrate • Porous structure of GaAs layer was demonstrated by using SEM and AFM microscopy.

Evaluating the shear bond strength of enamel and dentin with or without etching: A comparative study between dimethacrylate-based and silorane-based adhesives

Science.gov (United States)

Hajizadeh, Hila; Nasseh, Atefeh; Rahmanpour, Naim

2015-01-01

Background Silorane-based composites and their specific self-etch adhesive were introduced to conquest the polymerization shrinkage of methacrylate-based composites. It has been shown that additional etching of enamel and dentin can improve the bond strength of self-etch methacrylate-based adhesives but this claim is not apparent about silorane-based adhesives. Our objective was to compare the shear bond strength (SBS) of enamel and dentin between silorane-based adhesive resin and a methacrylate-based resin with or without additional etching. Material and Methods 40 sound human premolars were prepared and divided into two groups: 1- Filtek P60 composite and Clearfil SE Bond adhesive; 2- Filtek P90 composite and Silorane adhesive. Each group divided into two subgroups: with or without additional etching. For additional etching, 37% acid phosphoric was applied before bonding procedure. A cylinder of the composite was bonded to the surface. After 24 hours storage and 500 thermo cycling between 5-55°C, shear bond strength was assessed with the cross head speed of 0.5 mm/min. Then, bonded surfaces were observed under stereomicroscope to determine the failure mode. Data were analyzed with two-way ANOVA and Fischer exact test. Results Shear bond strength of Filtek P60 composite was significantly higher than Filtek P90 composite both in enamel and dentin surfaces (Penamel or dentin for each of the composites (P>0.05). There was no interaction between composite type and additional etching (P>0.05). Failure pattern was mainly adhesive and no significant correlation was found between failure and composite type or additional etching (P>0.05). Conclusions Shear bond strength of methacrylate-based composite was significantly higher than silorane-based composite both in enamel and dentin surfaces and additional etching had no significant effect on shear bond strength in enamel or dentin for each of the composites. The mode of failure had no meaningful relation to the type of

Dry etching for microelectronics

CERN Document Server

Powell, RA

1984-01-01

This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

Energy Technology Data Exchange (ETDEWEB)

Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M.P.; Hihn, J.Y., E-mail: jean-yves.hihn@univ-fcomte.fr

2015-11-15

Graphical abstract: Result of an etching step in ultrasound presence on intermetallic particles on a 2024 aluminum alloy. - Highlights: • Etching step prior to anodization on 2024 aluminum alloy. • Etching rate measurement and hydroxide film characterization by GDOES and SEM. • Various etching parameters (temperature, presence or absence of ultrasound). • Improvement of corrosion resistance show by electrochemical tests. - Abstract: Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

International Nuclear Information System (INIS)

Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M.P.; Hihn, J.Y.

2015-01-01

Graphical abstract: Result of an etching step in ultrasound presence on intermetallic particles on a 2024 aluminum alloy. - Highlights: • Etching step prior to anodization on 2024 aluminum alloy. • Etching rate measurement and hydroxide film characterization by GDOES and SEM. • Various etching parameters (temperature, presence or absence of ultrasound). • Improvement of corrosion resistance show by electrochemical tests. - Abstract: Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

Semiconductor structure and recess formation etch technique

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

Fabrication of etched facets and vertical couplers in InP for packaging and on-wafer test

NARCIS (Netherlands)

Lemos Alvares Dos Santos, Rui; D'Agostino, D.; Soares, F. M.; Haghighi, H. Rabbani; Williams, K. A.; Leijtens, X. J. M.

2016-01-01

In this letter, the fabrication and the characterization of angled and straight etched facets in InP-based technology are reported. In addition, we report on etched facets combined with coupler mirrors for vertical outcoupling, realized with a wet-etching process.

Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions

Science.gov (United States)

Pringle, Spencer Allen

HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-generation digital non-volatile memory and as synapse devices in braininspired logic systems, owing to their higher reliability compared to filamentary resistive random-access memory (ReRAM) and higher speed and lower power consumption compared to competing devices, including phase-change memory (PCM) and state-of-the-art FTJ. Ferroelectrics are often easier to deposit and have simpler material structure than films for magnetic tunnel junctions (MTJs). Ferroelectric HfO2 also enables complementary metal-oxide-semiconductor (CMOS) compatibility, since lead zirconate titanate (PZT) and BaTiO3-based FTJs often are not. No other groups have yet demonstrated a HfO2-based FTJ (to best of the author's knowledge) or applied it to a suitable system. For such devices to be useful, system designers require models based on both theoretical physical analysis and experimental results of fabricated devices in order to confidently design control systems. Both the CMOS circuitry and FTJs must then be designed in layout and fabricated on the same die. This work includes modeling of proposed device structures using a custom python script, which calculates theoretical potential barrier heights as a function of material properties and corresponding current densities (ranging from 8x103 to 3x10-2 A/cm 2 with RHRS/RLRS ranging from 5x105 to 6, depending on ferroelectric thickness). These equations were then combined with polynomial fits of experimental timing data and implemented in a Verilog-A behavioral analog model in Cadence Virtuoso. The author proposes tristate CMOS control systems, and circuits, for implementation of FTJ devices as digital memory and presents simulated performance. Finally, a process flow for fabrication of FTJ devices with CMOS is presented. This work has therefore enabled the fabrication of FTJ devices at RIT and the continued investigation of them as applied to any

Electrochemically deposited and etched membranes with precisely sized micropores for biological fluids microfiltration

International Nuclear Information System (INIS)

Hamzah, A A; Zainal Abidin, H E; Yeop Majlis, B; Mohd Nor, M; Ismardi, A; Sugandi, G; Tiong, T Y; Dee, C F; Yunas, J

2013-01-01

This paper presents simple and economical, yet reliable techniques to fabricate a micro-fluidic filter for MEMS lab-on-chip (LoC) applications. The microporous filter is a crucial component in a MEMS LoC system. Microsized components and contaminants in biological fluids are selectively filtered using copper and silicon membranes with precisely controlled microsized pores. Two techniques were explored in microporous membrane fabrication, namely copper electroplating and electrochemical etching (ECE) of silicon. In the first technique, a copper membrane with evenly distributed micropores was fabricated by electroplating the copper layer on the silicon nitride membrane, which was later removed to leave the freestanding microporous membrane structure. The second approach involves the thinning of bulk silicon down to a few micrometers thick using KOH and etching the resulting silicon membrane in 5% HF by ECE to create micropores. Upon testing with nanoparticles of various sizes, it was observed that electroplated copper membrane passes nanoparticles up to 200 nm wide, while porous silicon membrane passes nanoparticles up to 380 nm in size. Due to process compatibility, simplicity, and low-cost fabrication, electroplated copper and porous silicon membranes enable synchronized microfilter fabrication and integration into the MEMS LoC system. (paper)

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Science.gov (United States)

Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.

2017-10-01

A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.

Fabrication of different pore shapes by multi-step etching technique in ion-irradiated PET membranes

Science.gov (United States)

Mo, D.; Liu, J. D.; Duan, J. L.; Yao, H. J.; Latif, H.; Cao, D. L.; Chen, Y. H.; Zhang, S. X.; Zhai, P. F.; Liu, J.

2014-08-01

A method for the fabrication of different pore shapes in polyethylene terephthalate (PET)-based track etched membranes (TEMs) is reported. A multi-step etching technique involving etchant variation and track annealing was applied to fabricate different pore shapes in PET membranes. PET foils of 12-μm thickness were irradiated with Bi ions (kinetic energy 9.5 MeV/u, fluence 106 ions/cm2) at the Heavy Ion Research Facility (HIRFL, Lanzhou). The cross-sections of fundamental pore shapes (cylinder, cone, and double cone) were analyzed. Funnel-shaped and pencil-shaped pores were obtained using a two-step etching process. Track annealing was carried out in air at 180 °C for 120 min. After track annealing, the selectivity of the etching process decreased, which resulted in isotropic etching in subsequent etching steps. Rounded cylinder and rounded cone shapes were obtained by introducing a track-annealing step in the etching process. Cup and spherical funnel-shaped pores were fabricated using a three- and four-step etching process, respectively. The described multi-step etching technique provides a controllable method to fabricate new pore shapes in TEMs. Introduction of a variety of pore shapes may improve the separation properties of TEMs and enrich the series of TEM products.

Ultraviolet Laser Damage Dependence on Contamination Concentration in Fused Silica Optics during Reactive Ion Etching Process

Directory of Open Access Journals (Sweden)

Laixi Sun

2018-04-01

Full Text Available The reactive ion etching (RIE process of fused silica is often accompanied by surface contamination, which seriously degrades the ultraviolet laser damage performance of the optics. In this study, we find that the contamination behavior on the fused silica surface is very sensitive to the RIE process which can be significantly optimized by changing the plasma generating conditions such as discharge mode, etchant gas and electrode material. Additionally, an optimized RIE process is proposed to thoroughly remove polishing-introduced contamination and efficiently prevent the introduction of other contamination during the etching process. The research demonstrates the feasibility of improving the damage performance of fused silica optics by using the RIE technique.

Surfactant-enhanced control of track-etch pore morphology

International Nuclear Information System (INIS)

Apel', P.Yu.; Blonskaya, I.V.; Didyk, A.Yu.; Dmitriev, S.N.; Orelovich, O.L.; Samojlova, L.I.; Vutsadakis, V.A.; Root, D.

2000-01-01

The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

International Nuclear Information System (INIS)

Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

2008-01-01

Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature

Science.gov (United States)

2014-01-01

In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the ‘one-pot procedure’ metal-assisted chemical etching (MACE) method in the HF/H2O2/AgNO3 system at room temperature. The effects of H2O2 concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced by the addition of H2O2 and the pore structure could be controlled by adjusting the concentration of H2O2. The H2O2 species replaces Ag+ as the oxidant and the Ag nanoparticles work as catalyst during the etching. And the concentration of H2O2 influences the nucleation and motility of Ag particles, which leads to formation of different porous structure within the nanowires. A mechanism based on the lateral etching which is catalyzed by Ag particles under the motivation by H2O2 reduction is proposed to explain the PSiNWs formation. PMID:24910568

Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

Science.gov (United States)

Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

2017-04-01

features during the etch process. Herein we will also demonstrate a test case on how a combination or plasma assisted and plasma free etch techniques has the potential to improve process performance of a 193nm immersion based self aligned quandruple patterning (SAQP) for BEOL compliant films (an example shown in Fig 2). In addition, we will also present on the application of gas etches for (1) profile improvement, (2) selective mandrel pull (3) critical dimension trim of mandrels, with an analysis of advantages over conventional techniques in terms of LER and EPE.

Selective dry etching of silicon containing anti-reflective coating

Science.gov (United States)

Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

2018-03-01

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic

Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

Science.gov (United States)

Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

2018-04-01

A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

Catalyst and processing effects on metal-assisted chemical etching for the production of highly porous GaN

International Nuclear Information System (INIS)

Geng, Xuewen; Grismer, Dane A; Bohn, Paul W; Duan, Barrett K; Zhao, Liancheng

2013-01-01

Metal-assisted chemical etching is a facile method to produce micro-/nanostructures in the near-surface region of gallium nitride (GaN) and other semiconductors. Detailed studies of the production of porous GaN (PGaN) using different metal catalysts and GaN doping conditions have been performed in order to understand the mechanism by which metal-assisted chemical etching is accomplished in GaN. Patterned catalysts show increasing metal-assisted chemical etching activity to n-GaN in the order Ag < Au < Ir < Pt. In addition, the catalytic behavior of continuous films is compared to discontinuous island films. Continuous metal films strongly shield the surface, hindering metal-assisted chemical etching, an effect which can be overcome by using discontinuous films or increasing the irradiance of the light source. With increasing etch time or irradiance, PGaN morphologies change from uniform porous structures to ridge and valley structures. The doping type plays an important role, with metal-assisted chemical etching activity increasing in the order p-GaN < intrinsic GaN < n-GaN. Both the catalyst identity and the doping type effects are explained by the work functions and the related band offsets that affect the metal-assisted chemical etching process through a combination of different barriers to hole injection and the formation of hole accumulation/depletion layers at the metal–semiconductor interface. (paper)

Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

Directory of Open Access Journals (Sweden)

Hüpkes J.

2011-10-01

Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

Tracking magmatic processes through Zr/Hf ratios in rocks and Hf and Ti zoning in zircons: An example from the Spirit Mountain batholith, Nevada

Science.gov (United States)

Lowery, Claiborne L.E.; Miller, C.F.; Walker, B.A.; Wooden, J.L.; Mazdab, F.K.; Bea, F.

2006-01-01

Zirconium and Hf are nearly identical geochemically, and therefore most of the crust maintains near-chondritic Zr/Hf ratios of ???35-40. By contrast, many high-silica rhyolites and granites have anomalously low Zr/Hf (15-30). As zircon is the primary reservoir for both Zr and Hf and preferentially incorporates Zr, crystallization of zircon controls Zr/ Hf, imprinting low Zr/Hf on coexisting melt. Thus, low Zr/Hf is a unique fingerprint of effective magmatic fractionation in the crust. Age and compositional zonation in zircons themselves provide a record of the thermal and compositional histories of magmatic systems. High Hf (low Zr/ Hf) in zircon zones demonstrates growth from fractionated melt, and Ti provides an estimate of temperature of crystallization (TTiZ) (Watson and Harrison, 2005). Whole-rock Zr/Hf and zircon zonation in the Spirit Mountain batholith, Nevada, document repeated fractionation and thermal fluctuations. Ratios of Zr/Hf are ???30-40 for cumulates and 18-30 for high-SiO2 granites. In zircons, Hf (and U) are inversely correlated with Ti, and concentrations indicate large fluctuations in melt composition and TTiZ (>100??C) for individual zircons. Such variations are consistent with field relations and ion-probe zircon geochronology that indicate a >1 million year history of repeated replenishment, fractionation, and extraction of melt from crystal mush to form the low Zr/Hf high-SiO2 zone. ?? 2006 The Mineralogical Society.

Optimized piranha etching process for SU8-based MEMS and MOEMS construction

OpenAIRE

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

2010-01-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal...

Single-crystal silicon trench etching for fabrication of highly integrated circuits

Science.gov (United States)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

New Ablation-Resistant Material Candidate for Hypersonic Applications: Synthesis, Composition, and Oxidation Resistance of HfIr3-Based Solid Solution.

Science.gov (United States)

Lozanov, Victor V; Baklanova, Natalya I; Bulina, Natalia V; Titov, Anatoly T

2018-04-18

The peculiarities of the solid-state interaction in the HfC-Ir system have been studied within the 1000-1600 °C temperature range using a set of modern analytical techniques. It was stated that the interaction of HfC with iridium becomes noticeable at temperatures as low as 1000-1100 °C and results in the formation of HfIr 3 -based substitutional solid solution. The homogeneity range of the HfIr 3± x phase was evaluated and refined as HfIr 2.43 -HfIr 3.36 . The durability of the HfIr 3 -based system under extreme environmental conditions was studied. It was shown that the HfIr 3 -based material displays excellent ablation resistance under extreme environmental conditions. The benefits of the new designed material result from its relative oxygen impermeability and special microstructure similar to superalloys. The results obtained in this work allow us to consider HfIr 3 as a very promising candidate for extreme applications.

A novel non-sequential hydrogen-pulsed deep reactive ion etching of silicon

International Nuclear Information System (INIS)

Gharooni, M; Mohajerzadeh, A; Sandoughsaz, A; Khanof, S; Mohajerzadeh, S; Asl-Soleimani, E

2013-01-01

A non-sequential pulsed-mode deep reactive ion etching of silicon is reported that employs continuous etching and passivation based on SF 6 and H 2 gases. The passivation layer, as an important step for deep vertical etching of silicon, is feasible by hydrogen pulses in proper time-slots. By adjusting the etching parameters such as plasma power, H 2 and SF 6 flows and hydrogen pulse timing, the process can be controlled for minimum underetch and high etch-rate at the same time. High-aspect-ratio features can be realized with low-density plasma power and by controlling the reaction chemistry. The so-called reactive ion etching lag has been minimized by operating the reactor at higher pressures. X-ray photoelectron spectroscopy and scanning electron microscopy have been used to study the formation of the passivation layer and the passivation mechanism. (paper)

Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

Energy Technology Data Exchange (ETDEWEB)

Swain, Basudev, E-mail: swain@iae.re.kr [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Mishra, Chinmayee [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Hong, Hyun Seon [Sungshin University, Dept. of Interdisciplinary ECO Science, Seoul, 142-732 (Korea, Republic of); Cho, Sung-Soo [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of)

2016-05-15

Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m{sup 3} of copper and 1.35 kg/m{sup 3} of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching

Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

International Nuclear Information System (INIS)

Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

2016-01-01

Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m 3 of copper and 1.35 kg/m 3 of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching wastewater

Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

Science.gov (United States)

Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M. P.; Hihn, J. Y.

2015-11-01

Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

International Nuclear Information System (INIS)

Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

2012-01-01

thermal annealing of the high density, as-deposited a-C:H films. Furthermore, not only the density itself but also the variation of density with thermal annealing need to be elucidated in order to understand the dry etch properties of annealed a-C:H films. - Highlights: ► A-C:H(amorphous carbon) films are grown for using hard mask in dry etch process by plasma-enhanced chemical vapor deposition and annealed. ► Physical, chemical and mechanical properties of grown amorphous carbon films are changed by hydrogen and hydrocarbon contents, be determined by deposition and annealing temperature. ► Dry etch rate of a-C:H films is decreased and the film density increased through thermal annealing with high density, low hydrogen content, as-deposited film.

Localized etching of polymer films using an atmospheric pressure air microplasma jet

International Nuclear Information System (INIS)

Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

2015-01-01

A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min −1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ. (paper)

Design of an oval-form cathode for the precision etching process of e-paper surface

International Nuclear Information System (INIS)

Pa, P.S.

2009-01-01

A newly designed oval-form cathode using electroetching for indium-tin-oxide (ITO) microstructure removal from the surface of e-paper polymer PET films is presented. Through ultra-precise microstructural etching, the semiconductor industry can effectively reclaim defective products, thereby reducing production costs. The design features for the ITO removal process and the tool design of oval-form cathodes are of significant interest. A smaller oval-form cathode minor axis, a higher cathode rotational speed, a higher concentration, or a higher electrolyte temperature corresponds to a higher ITO etching rate.

Sub-micrometer-scale patterning on Zr-based metallic glass using focused ion beam irradiation and chemical etching

Energy Technology Data Exchange (ETDEWEB)

Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Morita, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Yamada, Shigeru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Takano, Noboru [Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Ashida, Kiwamu [Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan); Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kochi 782-8502 (Japan); Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan); Ofune, Hitoshi [YKK Corporation, 200 Yoshida, Kurobe, Toyama 938-8601 (Japan)

2007-09-19

This report describes a method of sub-micrometer-scale rapid patterning on a Zr-based metallic glass surface using a combination of focused ion beam irradiation and wet chemical etching. We found that a Zr-based metallic glass surface irradiated with Ga{sup +} ions could be selectively etched; a concave structure with a width and depth of several tens to hundreds of nanometers rapidly formed in the irradiated area. Moreover, we determined that the etching was enhanced by the presence of Ga{sup +} ions rather than a change in the crystal structure, and the structure could be fabricated while the substrate remained amorphous. The shape of the structure was principally a function of the dose and the etch time.

Nano/micro particle beam for ceramic deposition and mechanical etching

International Nuclear Information System (INIS)

Chun, Doo-Man; Kim, Min-Saeng; Kim, Min-Hyeng; Ahn, Sung-Hoon; Yeo, Jun-Cheol; Lee, Caroline Sunyong

2010-01-01

Nano/micro particle beam (NPB) is a newly developed ceramic deposition and mechanical etching process. Additive (deposition) and subtractive (mechanical etching) processes can be realized in one manufacturing process using ceramic nano/micro particles. Nano- or micro-sized powders are sprayed through the supersonic nozzle at room temperature and low vacuum conditions. According to the process conditions, the ceramic powder can be deposited on metal substrates without thermal damage, and mechanical etching can be conducted in the same process with a simple change of process conditions and powders. In the present work, ceramic aluminum oxide (Al 2 O 3 ) thin films were deposited on metal substrates. In addition, the glass substrate was etched using a mask to make small channels. Deposited and mechanically etched surface morphology, coating thickness and channel depth were investigated. The test results showed that the NPB provides a feasible additive and subtractive process using ceramic powders.

Annealing and etching effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors

DEFF Research Database (Denmark)

Pospori, A.; Marques, C. A.F.; Sáez-Rodríguez, D.

2017-01-01

Thermal annealing and chemical etching effects on the strain and stress sensitivity of polymer optical fibre based sensors are investigated. Bragg grating sensors have been photo-inscribed in PMMA optical fibre and their strain and stress sensitivity has been characterised before and after any...... annealing or etching process. The annealing and etching processes have been tried in different sequence in order to investigate their impact on the sensor's performance. Results show with high confidence that fibre annealing can improve both strain and stress sensitivities. The fibre etching can also...... provide stress sensitivity enhancement, however the strain sensitivity changes seems to be random....

Plasma atomic layer etching using conventional plasma equipment

International Nuclear Information System (INIS)

Agarwal, Ankur; Kushner, Mark J.

2009-01-01

The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching (PALE) is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with carefully tailored activation energy then removes a single layer of the underlying material. If these goals are met, the process is self-limiting. A challenge of PALE is the high cost of specialized equipment and slow processing speed. In this work, results from a computational investigation of PALE will be discussed with the goal of demonstrating the potential of using conventional plasma etching equipment having acceptable processing speeds. Results will be discussed using inductively coupled and magnetically enhanced capacitively coupled plasmas in which nonsinusoidal waveforms are used to regulate ion energies to optimize the passivation and etch steps. This strategy may also enable the use of a single gas mixture, as opposed to changing gas mixtures between steps

Recovery Process of Li, Al and Si from Lepidolite by Leaching with HF

Directory of Open Access Journals (Sweden)

Gustavo D. Rosales

2017-03-01

Full Text Available This work describes the development of a new process for the recovery of Li, Al and Si along with the proposal of a flow sheet for the precipitation of those metals. The developed process is comprised of lepidolite acid digestion with hydrofluoric acid, and the subsequent precipitation of the metals present in the leach liquor. The leaching operational parameters studied were: reaction time, temperature and HF concentration. The experimental results indicate that the optimal conditions to achieve a Li extraction higher than 90% were: solid-liquid ratio, 1.82% (w/v; temperature, 123 °C; HF concentration, 7% (v/v; stirring speed, 330 rpm; and reaction time, 120 min. Al and Si can be recovered as Na3AlF6 and K2SiF6. LiF was separated from the leach liquor during water evaporation, with recovery values of 92%.

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

Science.gov (United States)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

Science.gov (United States)

Ozer, Fusun; Blatz, Markus B

2013-01-01

Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

DREM: Infinite etch selectivity and optimized scallop size distribution with conventional photoresists in an adapted multiplexed Bosch DRIE process

DEFF Research Database (Denmark)

Chang, Bingdong; Leussink, Pele; Jensen, Flemming

2018-01-01

The quest to sculpture materials as small and deep as possible is an ongoing topic in micro- and nanofabrication. For this, the Bosch process has been widely used to achieve anisotropic silicon microstructures with high aspect ratio. Reactive ion etching (RIE) lag is a phenomenon in which etch ra...

Si etching with reactive neutral beams of very low energy

Energy Technology Data Exchange (ETDEWEB)

Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

2014-12-14

A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

Development of a reader for track etch detectors based on a commercially available slide scanner

CERN Document Server

Steele, J D; Tanner, R J; Bartlett, D T

1999-01-01

NRPB has operated a routine neutron personal dosimetry service based on the electrochemical etch of PADC elements since 1986. Since its inception it has used an automated reader based on a video camera and real time analysis. A new and more powerful replacement system has been developed using a commercially available photographic slide scanner. This permits a complete image of the dosemeter to be grabbed in a single scan, generating a 2592x3888 pixel file which is saved for subsequent analysis. This gives an effective pixel size of 10x10 mu m with an image of the entire dosemeter in one field of view. Custom written software subsequently analyses the image to assess the number of etched pits on the dosemeter and read the detector identification number (code). Batch scanning of up to 40 detectors is also possible using an autofeed attachment. The system can be used for electrochemically etched tracks for neutron detectors and chemically etched tracks for radon detectors.

Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

Energy Technology Data Exchange (ETDEWEB)

Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

2008-10-01

Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

Optimized piranha etching process for SU8-based MEMS and MOEMS construction

International Nuclear Information System (INIS)

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Hawkins, Aaron; Schmidt, Holger

2010-01-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H 2 O 2 :H 2 SO 4 ) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO 2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides

Optimized piranha etching process for SU8-based MEMS and MOEMS construction

Science.gov (United States)

Holmes, Matthew; Keeley, Jared; Hurd, Katherine; Schmidt, Holger; Hawkins, Aaron

2010-11-01

We demonstrate the optimization of the concentration, temperature and cycling of a piranha (H2O2:H2SO4) mixture that produces high yields while quickly etching hollow structures made using a highly crosslinked SU8 polymer sacrificial core. The effects of the piranha mixture on the thickness, refractive index and roughness of common micro-electromechanical systems and micro-opto-electromechanical systems fabrication materials (SiN, SiO2 and Si) were determined. The effectiveness of the optimal piranha mixture was demonstrated in the construction of hollow anti-resonant reflecting optical waveguides.

Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

Science.gov (United States)

He, Weifan; Sun, Huajun; Zhou, Yaxiong; Lu, Ke; Xue, Kanhao; Miao, Xiangshui

2017-08-30

The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO 2-x , given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO 2-x material have not been studied. Here we report Pt/HfO 2-x /Ti memristors with double memristive modes, forming-free and low operation voltage, which were tuned by oxidation conditions of HfO 2-x films. As O/Hf ratios of HfO 2-x films increase, the forming voltages, SET voltages, and R off /R on windows increase regularly while their resistive transitions undergo from gradually to sharply in I/V sweep. Two memristors with typical resistive transitions were studied to customize binary and multi-level memristive modes, respectively. For binary mode, high-speed switching with 10 3 pulses (10 ns) and retention test at 85 °C (>10 4 s) were achieved. For multi-level mode, the 12-levels stable resistance states were confirmed by ongoing multi-window switching (ranging from 10 ns to 1 μs and completing 10 cycles of each pulse). Our customized binary and multi-level HfO 2-x -based memristors show high-speed switching, multi-level storage and excellent stability, which can be separately applied to logic computing and neuromorphic computing, further suitable for in-memory computing chip when deposition atmosphere may be fine-tuned.

Deep reactive ion etching of fused silica using a single-coated soft mask layer for bio-analytical applications

International Nuclear Information System (INIS)

Ray, Tathagata; Zhu, Haixin; Meldrum, Deirdre R

2010-01-01

In this note, we present our results from process development and characterization of reactive ion etching (RIE) of fused silica using a single-coated soft masking layer (KMPR® 1025, Microchem Corporation, Newton, MA). The effects of a number of fluorine-radical-based gaseous chemistries, the gas flow rate, RF power and chamber pressure on the etch rate and etching selectivity of fused silica were studied using factorial experimental designs. RF power and pressure were found to be the most important factors in determining the etch rate. The highest fused silica etch rate obtained was about 933 Å min −1 by using SF 6 -based gas chemistry, and the highest etching selectivity between the fused silica and KMPR® 1025 was up to 1.2 using a combination of CF 4 , CHF 3 and Ar. Up to 30 µm deep microstructures have been successfully fabricated using the developed processes. The average area roughness (R a ) of the etched surface was measured and results showed it is comparable to the roughness obtained using a wet etching technique. Additionally, near-vertical sidewalls (with a taper angle up to 85°) have been obtained for the etched microstructures. The processes developed here can be applied to any application requiring fabrication of deep microstructures in fused silica with near-vertical sidewalls. To our knowledge, this is the first note on deep RIE of fused silica using a single-coated KMPR® 1025 masking layer and a non-ICP-based reactive ion etcher. (technical note)

Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

Science.gov (United States)

Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

Plasma etching of electrospun polymeric nanofibres

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil)]. E-mail: verdonck@imec.be; Braga Caliope, Priscila [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Moral Hernandez, Emilio del [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Silva, Ana Neilde R. da [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); FATEC-SP, Pca Fernando Prestes, 30 Sao Paulo, SP (Brazil)

2006-10-25

Electrospun polymeric nanofibres have several applications because of their high surface area to volume and high length to diameter ratios. This paper investigates the influence of plasma etching on these fibres and the etching mechanisms. For the characterization, SEM analysis was performed to determine the forms and shapes of the fibres and SEM photos were analysed by the technique of mathematical morphology, in order to determine the area on the sample occupied by the fibres and the frequency distribution of the nanofibre diameters. The results showed that the oxygen plasma etches the nanofibres much faster when ion bombardment is present. The form of the fibres is not altered by the etching, indicating the possibility of transport of oxygen atoms over the fibre surface. The most frequent diameter, somewhat surprisingly, is not significantly dependent on the etching process, and remains of the order of 80 nm, indicating that fibres with smaller diameters are etched at high rates.

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

Directory of Open Access Journals (Sweden)

Yuehua Dai

2016-08-01

Full Text Available The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

Thinning of N-face GaN (0001) samples by inductively coupled plasma etching and chemomechanical polishing

International Nuclear Information System (INIS)

Rizzi, F.; Gu, E.; Dawson, M. D.; Watson, I. M.; Martin, R. W.; Kang, X. N.; Zhang, G. Y.

2007-01-01

The processing of N-polar GaN (0001) samples has been studied, motivated by applications in which extensive back side thinning of freestanding GaN (FS-GaN) substrates is required. Experiments were conducted on FS-GaN from two commercial sources, in addition to epitaxial GaN with the N-face exposed by a laser lift-off process. The different types of samples produced equivalent results. Surface morphologies were examined over relatively large areas, using scanning electron microscopy and stylus profiling. The main focus of this study was on inductively coupled plasma (ICP) etch processes, employing Cl 2 /Ar or Cl 2 /BCl 3 Ar gas mixtures. Application of a standard etch recipe, optimized for feature etching of Ga-polar GaN (0001) surfaces, caused severe roughening of N-polar samples and confirmed the necessity for specific optimization of etch conditions for N-face material. A series of recipes with a reduced physical (sputter-based) contribution to etching allowed average surface roughness values to be consistently reduced to below 3 nm. Maximum N-face etch rates of 370-390 nm/min have been obtained in recipes examined to date. These are typically faster than etch rates obtained on Ga-face samples under the same conditions and adequate for the process flows of interest. Mechanistic aspects of the ICP etch process and possible factors contributing to residual surface roughness are discussed. This study also included work on chemomechanical polishing (CMP). The optimized CMP process had stock removal rates of ∼500 nm/h on the GaN N face. This was much slower than the ICP etching but showed the important capability of recovering smooth surfaces on samples roughened in previous processing. In one example, a surface roughened by nonoptimized ICP etching was smoothed to give an average surface roughness of ∼2 nm

Investigation of plasma etch damage to porous oxycarbosilane ultra low-k dielectric

International Nuclear Information System (INIS)

Bruce, R L; Engelmann, S; Purushothaman, S; Volksen, W; Frot, T J; Magbitang, T; Dubois, G; Darnon, M

2013-01-01

There has been much interest recently in porous oxycarbosilane (POCS)-based materials as the ultra-low k dielectric (ULK) in back-end-of-line (BEOL) applications due to their superior mechanical properties compared to traditional organosilicate-based ULK materials at equivalent porosity and dielectric constant. While it is well known that plasma etching and strip processes can cause significant damage to ULK materials in general, little has been reported about the effect of plasma damage to POCS as the ULK material. We investigated the effect of changing the gas discharge chemistry and substrate bias in the dielectric trench etch and also the subsequent effect of the cap-open etch on plasma damage to POCS during BEOL integration. Large differences in surface roughness and damage behaviour were observed by changing the fluorocarbon depositing conditions. These damage behaviour trends will be discussed and potential rationalizations offered based on the formation of pits and craters at the etch front that lead to surface roughness and microtrenching. (paper)

Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

International Nuclear Information System (INIS)

Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

2012-01-01

In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

Combination of gettering and etching in multicrystalline silicon used in solar cells processing

International Nuclear Information System (INIS)

Dimassi, W.; Bouaicha, M.; Nouri, H.; Ben Nasrallah, S.; Bessais, B.

2006-01-01

Undesired impurities can be removed away from multicrystalline silicon (mc-Si) wafers by combining porous silicon (PS) formation and heat treatments. The gettering procedure used in this work is based on the formation of a PS film at both back and front sides of the mc-Si wafers, followed by a heat treatment. The latter was achieved in an infrared furnace at different temperatures and during various periods. We show that when the based material undergoes such a gettering, the electrical properties (short-circuit current, open-circuit voltage, serial and shunt resistances) and the electronic parameters (diffusion length and grain boundary recombination velocity) of the corresponding solar cells can be improved only if some regions of the wafers are etched. Compared to reference cells based on untreated wafers, the diffusion length and grain boundary recombination velocity of solar cells fabricated from gettered and etched samples was improved by about 30% and reduced by a factor of 10, respectively

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Science.gov (United States)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Copper-assisted, anti-reflection etching of silicon surfaces

Science.gov (United States)

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

Process Simulation Analysis of HF Stripping

Directory of Open Access Journals (Sweden)

Thaer A. Abdulla

2015-02-01

Full Text Available    HYSYS process simulator is used for the analysis of existing HF stripping column in LAB plant (Arab Detergent Company, Baiji-Iraq. Simulated column performance and profiles curves are constructed. The variables considered are the thermodynamic model option, bottom temperature, feed temperature, and column profiles for the temperature, vapor flow rate, liquid flow rate and composition. The five thermodynamic models options used (Margules, UNIQUAC, van laar, Antoine, and Zudkevitch-Joffee, affecting the results within (0.1-58% variation for the most cases.        The simulated results show that about 4% of paraffin (C10 & C11 presents at the top stream, which may cause a problem in the LAB production plant. The major variations were noticed for the total top vapor flow rate with bottom temperature and with feed composition. The column profiles maintain fairly constants from tray 5 to tray 18. The study gives evidence about a successful simulation with HYSYS because the results correspond with the real plant operation data.

Characterization of nanostructured CuO-porous silicon matrixformed on copper coated silicon substrate via electrochemical etching

International Nuclear Information System (INIS)

Naddaf, M.; Mrad, O.; Al-Zier, A.

2015-01-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak (blue) PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.(author)

Method of plastic track detector electrochemical etching

International Nuclear Information System (INIS)

D'yakov, A.A.

1984-01-01

The review of studies dealing with the development of the method for the electro-chemical etching (ECE) of the plastic track detectors on the base of polyethy-leneterephthalate (PET) and polycarbonate (PC) is given. Physical essence of the method, basic parameters of the processes, applied equipment and methods of measurement automation are considered. The advantages of the method over the traditional chemical etching are pointed out. Recommendations on the detector operation modes when detecting fission fragments, α-particles and fast neutrons are given. The ECE method is based on the condition that during chemical etching the high-voltage sound frequency alternating electric field is applied to the detector. In this case the detector serves as an isolating layer betWeen two vessels with etching solution in which high-voltage electrode are submerged. At a fixed electric field potential higher (over than the threshold value) at the end of the etching track cone atree-like discharge spot arises. It is shown that when PET is used for fast neutron detection it is advisable to apply for ECE the PEW solution (15g KOH+40 g C 2 H 2 OH + 45g H 2 O) the field potential should constitute 30 kVxcm -1 at the freqUency of 9 kHz. In the case of fission fragment detection Using ECE and PC the following ECE conditions are recommended: 30% KOH etcher, field potential of 10 kVxcm -1 , 2-4 kHz frequency. It is concluded that the ECE method permits considerably eXtend the sphere of plastic track detector application for detecting ionizing particles,

Investigation on electrical tree propagation in polyethylene based on etching method

Directory of Open Access Journals (Sweden)

Zexiang Shi

2017-11-01

Full Text Available To investigate the characteristic of electrical tree propagation in semi-crystalline polymers, the low-density polyethylene (LDPE samples containing electrical trees are cut into slices by using ultramicrotome. Then the slice samples are etched by potassium permanganate etchant. Finally, the crystalline structure and the electrical tree propagation path in samples are observed by polarized light microscopy (PLM. According to the observation, the LDPE spherocrystal structure model is established on the basis of crystallization kinetics and morphology of polymers. And the electrical tree growth process in LDPE is discussed based on the free volume breakdown theory, the molecular chain relaxation theory, the electromechanical force theory, the thermal expansion effect and the space charge shielding effect.

Thermal history-based etching

Science.gov (United States)

Simpson, John T.

2017-11-28

A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

Dry etching of thin chalcogenide films

Energy Technology Data Exchange (ETDEWEB)

Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

2010-04-01

Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

Plasma etching of niobium-SiO/sub x/ layers

International Nuclear Information System (INIS)

Schelle, D.; Tiller, H.J.

1986-01-01

CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

Science.gov (United States)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Etching of LiNbO/sub 3/ by laser-driven fusion of salts

International Nuclear Information System (INIS)

Ashby, C.I.H.; Brannon, P.J.

1987-01-01

Lithium niobate exhibits low reactivity with most chemical etchants. Consequently, etching a LiNbO/sub 3/ surface to produce optical structures such as ridge waveguides or grooves for fiber coupling normally requires relatively slow processes such as ion milling. The authors have developed a laser-driven chemical etching process for etching highly unreactive ionic solids based on the fusion of salts in the molten phase and show that the etch rate can be more than 100 times faster than ion milling rates. This process involves spatially localized melting of LiNbO/sub 3/ by high-power density laser pulses with photon energies in excess of the band gap of LiNbO/sub 3/. While molten, LiNbO/sub 3/ undergoes reaction with a surface coating of KF to form niobium oxyfluoride anions by fusion of the salts. The resulting solid is highly water soluble. The insolubility of LiNbO/sub 3/ permits subsequent removal of only the irradiated area by rinsing in water. Surface morphology is determined by laser power density. The process exhibits a wavelength dependence

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

International Nuclear Information System (INIS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

International Nuclear Information System (INIS)

Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2017-01-01

Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

International Nuclear Information System (INIS)

Altamore, C; Tringali, C; Sparta', N; Marco, S Di; Grasso, A; Ravesi, S

2010-01-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10 5 ) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10 1 Hz to 10 6 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl 2 /Ar chemistry. The relationship between the etch rate and the Cl 2 /Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl 2 /Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

Energy Technology Data Exchange (ETDEWEB)

Altamore, C; Tringali, C; Sparta' , N; Marco, S Di; Grasso, A; Ravesi, S [STMicroelectronics, Industial and Multi-segment Sector R and D, Catania (Italy)

2010-02-15

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10{sup 5}) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10{sup 1} Hz to 10{sup 6} Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl{sub 2}/Ar chemistry. The relationship between the etch rate and the Cl{sub 2}/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl{sub 2}/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Structure and properties of a model conductive filament/host oxide interface in HfO2-based ReRAM

Science.gov (United States)

Padilha, A. C. M.; McKenna, K. P.

2018-04-01

Resistive random-access memory (ReRAM) is a promising class of nonvolatile memory capable of storing information via its resistance state. In the case of hafnium oxide-based devices, experimental evidence shows that a conductive oxygen-deficient filament is formed and broken inside of the device by oxygen migration, leading to switching of its resistance state. However, little is known about the nature of this conductive phase, its interface with the host oxide, or the associated interdiffusion of oxygen, presenting a challenge to understanding the switching mechanism and device properties. To address these problems, we present atomic-scale first-principles simulations of a prototypical conductive phase (HfO), the electronic properties of its interface with HfO2, as well as stability with respect to oxygen diffusion across the interface. We show that the conduction-band offset between HfO and HfO2 is 1.3 eV, smaller than typical electrode-HfO2 band offsets, suggesting that positive charging and band bending should occur at the conductive filament-HfO2 interface. We also show that transfer of oxygen across the interface, from HfO2 into HfO, costs around 1.2 eV per atom and leads to a gradual opening of the HfO band gap, and hence disruption of the electrical conductivity. These results provide invaluable insights into understanding the switching mechanism for HfO2-based ReRAM.

Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates

International Nuclear Information System (INIS)

Lee, Chi-Yuan; Chang, Chienliu; Shih, Wen-Pin; Dai, Ching-Liang

2010-01-01

The wet etch process for amorphous indium gallium zinc oxide (a-IGZO or a-InGaZnO) by using various etchants is reported. The etch rates of a-IGZO, compared to another indium-based oxides including indium gallium oxide (IGO), indium zinc oxide (IZO), and indium tin oxide (ITO), are measured by using acetic acid, citric acid, hydrochloric acid, perchloric acid, and aqua ammonia as etchants, respectively. In our experimental results, the etch rate of the transparent oxide semiconductor (TOS) films by using acid solutions ranked accordingly from high to low are IZO, IGZO, IGO and ITO. Comparatively, the etch rate of the TOS films by using alkaline ammonia solution ranked from high to low are IGZO, IZO, IGO and ITO, in that order. Using the proposed wet etching process with high etch selectivity, bottom-gate-type thin-film transistors (TFTs) based on a-IGZO channels and Y 2 O 3 gate-insulators were fabricated by radio-frequency sputtering on plastic substrates. The wet etch processed TFT with 30 μm gate length and 120 μm gate width exhibits a saturation mobility of 46.25 cm 2 V -1 s -1 , a threshold voltage of 1.3 V, a drain current on-off ratio > 10 6 , and subthreshold gate voltage swing of 0.29 V decade -1 . The performance of the TFTs ensures the applicability of the wet etching process for IGZO to electronic devices on organic polymer substrates.

Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

International Nuclear Information System (INIS)

Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

2012-01-01

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

Science.gov (United States)

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Science.gov (United States)

Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

2012-07-23

A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

Characterization of nanostructured CuO-porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

Science.gov (United States)

Naddaf, M.; Mrad, O.; Al-zier, A.

2014-06-01

A pulsed anodic etching method has been utilized for nanostructuring of a copper-coated p-type (100) silicon substrate, using HF-based solution as electrolyte. Scanning electron microscopy reveals the formation of a nanostructured matrix that consists of island-like textures with nanosize grains grown onto fiber-like columnar structures separated with etch pits of grooved porous structures. Spatial micro-Raman scattering analysis indicates that the island-like texture is composed of single-phase cupric oxide (CuO) nanocrystals, while the grooved porous structure is barely related to formation of porous silicon (PS). X-ray diffraction shows that both the grown CuO nanostructures and the etched silicon layer have the same preferred (220) orientation. Chemical composition obtained by means of X-ray photoelectron spectroscopic (XPS) analysis confirms the presence of the single-phase CuO on the surface of the patterned CuO-PS matrix. As compared to PS formed on the bare silicon substrate, the room-temperature photoluminescence (PL) from the CuO-PS matrix exhibits an additional weak `blue' PL band as well as a blue shift in the PL band of PS (S-band). This has been revealed from XPS analysis to be associated with the enhancement in the SiO2 content as well as formation of the carbonyl group on the surface in the case of the CuO-PS matrix.

Texturization of diamond-wire-sawn multicrystalline silicon wafer using Cu, Ag, or Ag/Cu as a metal catalyst

Science.gov (United States)

Wang, Shing-Dar; Chen, Ting-Wei

2018-06-01

In this work, Cu, Ag, or Ag/Cu was used as a metal catalyst to study the surface texturization of diamond-wire-sawn (DWS) multi-crystalline silicon (mc-Si) wafer by a metal-assisted chemical etching (MACE) method. The DWS wafer was first etched by standard HF-HNO3 acidic etching, and it was labeled as AE-DWS wafer. The effects of ratios of Cu(NO3)2:HF, AgNO3:HF, and AgNO3:Cu(NO3)2 on the morphology of AE-DWS wafer were investigated. After the process of MACE, the wafer was treated with a NaF/H2O2 solution. In this process, H2O2 etched the nanostructure, and NaF removed the oxidation layer. The Si {1 1 1} plane was revealed by etching the wafer in a mixture of 0.03 M Cu(NO3)2 and 1 M HF at 55 °C for 2.5 min. These parallel Si {1 1 1} planes replaced some parallel saw marks on the surface of AE-DWS wafers without forming a positive pyramid or an inverted pyramid structure. The main topography of the wafer is comprised of silicon nanowires grown in direction when Ag or Ag/Cu was used as a metal catalyst. When silicon is etched in a mixed solution of Cu(NO3)2, AgNO3, HF and H2O2 at 55 °C with a concentration ratio of [Cu2+]/[Ag+] of 50 or at 65 °C with a concentration ratio of [Cu2+]/[Ag+] of 33, a quasi-inverted pyramid structure can be obtained. The reflectivity of the AE-DWS wafers treated with MACE is lower than that of the multiwire-slurry-sawn (MWSS) mc-Si wafers treated with traditional HF + HNO3 etching.

Reconciliation of the excess 176Hf conundrum in meteorites: Recent disturbances of the Lu-Hf and Sm-Nd isotope systematics

Science.gov (United States)

Bast, Rebecca; Scherer, Erik E.; Sprung, Peter; Mezger, Klaus; Fischer-Gödde, Mario; Taetz, Stephan; Böhnke, Mischa; Schmid-Beurmann, Hinrich; Münker, Carsten; Kleine, Thorsten; Srinivasan, Gopalan

2017-09-01

The long-lived 176Lu-176Hf and 147Sm-143Nd radioisotope systems are commonly used chronometers, but when applied to meteorites, they can reveal disturbances. Specifically, Lu-Hf isochrons commonly yield dates up to ∼300 Myr older than the solar system and varying initial 176Hf/177Hf values. We investigated this problem by attempting to construct mineral and whole rock isochrons for eucrites and angrites. Meteorites from different parent bodies exhibit similar disturbance features suggesting that a common process is responsible. Minerals scatter away from isochron regressions for both meteorite classes, with low-Hf phases such as plagioclase and olivine typically being most displaced above (or left of) reference isochrons. Relatively Hf-rich pyroxene is less disturbed but still to the point of steepening Lu-Hf errorchrons. Using our Lu-Hf and Sm-Nd data, we tested various Hf and Lu redistribution scenarios and found that decoupling of Lu/Hf from 176Hf/177Hf must postdate the accumulation of significant radiogenic 176Hf. Therefore early irradiation or diffusion cannot explain the excess 176Hf. Instead, disturbed meteorite isochrons are more likely caused by terrestrial weathering, contamination, or common laboratory procedures. The partial dissolution of phosphate minerals may predominantly remove rare earth elements including Lu, leaving relatively immobile and radiogenic Hf behind. Robust Lu-Hf (and improved Sm-Nd) meteorite geochronology will require the development of chemical or physical methods for removing unsupported radiogenic Hf and silicate-hosted terrestrial contaminants without disturbing parent-daughter ratios.

Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

International Nuclear Information System (INIS)

Scheidecker, R.W.

1979-01-01

Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

Science.gov (United States)

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

High-aspect-ratio HfC nanobelts accompanied by HfC nanowires: Synthesis, characterization and field emission properties

Energy Technology Data Exchange (ETDEWEB)

Tian, Song, E-mail: tiansong22@126.com [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); School of Materials Science and Engineering, Chongqing Jiaotong University, Chongqing 400074 (China); Zhang, Yulei; Ren, Jincui; Qiang, Xinfa; Zhang, Shouyang [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); Li, Hejun, E-mail: lihejun@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China)

2017-04-30

Highlights: • HfC naobelts accompanied by HfC nanowires were synthesized by a catalytic CVD method. • HfC nanobelts as a novel structure of HfC ceramic are reported for the first time. • HfC nanobelts have 100–200 μm in lengths and reach up to 10 μm in widths. • The synthesized product is promising field nanoemitters. - Abstract: As a key refractory carbide, hafnium carbide (HfC) is commonly used as structural materials while the field emission (FE) application of HfC in the field of vacuum microelectronics is almost the only one for functional material purposes. Based on its outstanding physical and chemical characteristics, HfC is identified as a potential candidate with satisfactory mechanical properties and long-term and/or high-temperature FE stability for future applications in high-performance field emitters. However, the development of HfC in various FE applications is hindered because it is not facile to fabricate large-scale low-dimensional HfC field nanoemitters. Herein, High-aspect-ratio HfC nanobelts accompanied by HfC nanowires were synthesized on a large scale by a traditional and simple catalytic chemical vapor deposition (CVD) method. Classical vapor–liquid–solid (VLS) theory was employed to explain the growth of the HfC nanowires and nanobelts along axial direction. The thin HfO{sub 2} shell and thin C layer surrounding the nanostructures might give rise to the diameter fluctuation of HfC nanowires and the width increase of HfC nanobelts in lateral direction. Field emission results show that the high-aspect-ratio HfC nanobelts accompanied by the nanowires are promising field nanoemitters, which exhibit excellent field emission properties with a fairly low turn-on field of ∼1.5 V μm{sup −1} and a low current fluctuation less than ∼10%. This suggests that HfC ceramics with high-aspect-ratio nanostructures are ideal cathode material for various field emission applications.

High-Density Plasma-Induced Etch Damage of GaN

International Nuclear Information System (INIS)

Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

1999-01-01

Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN

Refractive microlensarray made of silver-halide sensitized gelatin (SHSG) etched by enzyme with SLM-based lithography

Science.gov (United States)

Guo, Xiaowei; Chen, Mingyong; Zhu, Jianhua; Ma, Yanqin; Du, Jinglei; Guo, Yongkang; Du, Chunlei

2006-01-01

A novel method for the fabrication of continuous micro-optical components is presented in this paper. It employs a computer controlled digital-micromirror-device(DMD TM) as a switchable projection mask and silver-halide sensitized gelatin (SHSG) as recording material. By etching SHSG with enzyme solution, the micro-optical components with relief modulation can be generated through special processing procedures. The principles of etching SHSG with enzyme and theoretical analysis for deep etching are also discussed in detail, and the detailed quantitative experiments on the processing procedures are conducted to determine optimum technique parameters. A good linear relationship within a depth range of 4μm was experimentally obtained between exposure dose and relief depth. At last, the microlensarray with 256.8μm radius and 2.572μm depth was achieved. This method is simple, cheap and the aberration in processing procedures can be corrected in the step of designing mask, so it is a practical method to fabricate good continuous profile for low-volume production.

Understanding and controlling the step bunching instability in aqueous silicon etching

Science.gov (United States)

Bao, Hailing

Chemical etching of silicon has been widely used for more than half a century in the semiconductor industry. It not only forms the basis for current wafer cleaning processes, it also serves as a powerful tool to create a variety of surface morphologies for different applications. Its potential for controlling surface morphology at the atomic scale over micron-size regions is especially appealing. In spite of its wide usage, the chemistry of silicon etching is poorly understood. Many seemingly simple but fundamental questions have not been answered. As a result, the development of new etchants and new etching protocols are based on expensive and tedious trial-and-error experiments. A better understanding of the etching mechanism would direct the rational formulation of new etchants that produce controlled etch morphologies. Particularly, micron-scale step bunches spontaneously develop on the vicinal Si(111) surface etched in KOH or other anisotropic aqueous etchants. The ability to control the size, orientation, density and regularity of these surface features would greatly improve the performance of microelectromechanical devices. This study is directed towards understanding the chemistry and step bunching instability in aqueous anisotropic etching of silicon through a combination of experimental techniques and theoretical simulations. To reveal the cause of step-bunching instability, kinetic Monte Carlo simulations were constructed based on an atomistic model of the silicon lattice and a modified kinematic wave theory. The simulations showed that inhomogeneity was the origin of step-bunching, which was confirmed through STM studies of etch morphologies created under controlled flow conditions. To quantify the size of the inhomogeneities in different etchants and to clarify their effects, a five-parallel-trench pattern was fabricated. This pattern used a nitride mask to protect most regions of the wafer; five evenly spaced etch windows were opened to the Si(110

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

OpenAIRE

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-01-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted ...

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

Science.gov (United States)

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

Energy Technology Data Exchange (ETDEWEB)

Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

2010-05-31

The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas

International Nuclear Information System (INIS)

Min, Jae-Ho; Lee, Gyeo-Re; Lee, Jin-Kwan; Moon, Sang Heup; Kim, Chang-Koo

2004-01-01

The dependences of etch rates on the angle of ions incident on the substrate surface in four plasma/substrate systems that constitute the advanced Bosch process were investigated using a Faraday cage designed for the accurate control of the ion-incident angle. The four systems, established by combining discharge gases and substrates, were a SF 6 /poly-Si, a SF 6 /fluorocarbon polymer, an O 2 /fluorocarbon polymer, and a C 4 F 8 /Si. In the case of SF 6 /poly-Si, the normalized etch rates (NERs), defined as the etch rates normalized by the rate on the horizontal surface, were higher at all angles than values predicted from the cosine of the ion-incident angle. This characteristic curve shape was independent of changes in process variables including the source power and bias voltage. Contrary to the earlier case, the NERs for the O 2 /polymer decreased and eventually reached much lower values than the cosine values at angles between 30 deg. and 70 deg. when the source power was increased and the bias voltage was decreased. On the other hand, the NERs for the SF 6 /polymer showed a weak dependence on the process variables. In the case of C 4 F 8 /Si, which is used in the Bosch process for depositing a fluorocarbon layer on the substrate surface, the deposition rate varied with the ion incident angle, showing an S-shaped curve. These characteristic deposition rate curves, which were highly dependent on the process conditions, could be divided into four distinct regions: a Si sputtering region, an ion-suppressed polymer deposition region, an ion-enhanced polymer deposition region, and an ion-free polymer deposition region. Based on the earlier characteristic angular dependences of the etch (or deposition) rates in the individual systems, ideal process conditions for obtaining an anisotropic etch profile in the advanced Bosch process are proposed

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

Science.gov (United States)

Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

2017-10-24

Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

Mesocrystals luminescent BaZrHfO{sub 3} synthesized via hydrothermal process assisted by microwave

Energy Technology Data Exchange (ETDEWEB)

Fassbender, Rafael Uarth, E-mail: uarth.fisica@gmail.com

2016-07-01

Full text: The Barium Zirconate (BaZrO{sub 3}), is a ceramic oxide belonging to the functional group of perovskites (ABO{sub 3}), this compound can be doped with hafniun (Hf) in solid solution by microwave assisted hydrothermal method (MAH) radioluminescent increases their properties. This method allows to obtain barium zirconate at low temperature as 140 deg C and short times as 160 minutes. The choice of Hafnium (Hf) as a dopant is based on its similarity with Zirconium (Zr), another good reason for this choice is that the Hafnium has intrinsic luminescent characteristics. In general, radioluminescent materials have high density and high atomic mass (atomic number of Hafnium is 72), thereby facilitating the absorption of ionizing radiation to convert it into visible light, this characteristic is strongly dependent on the morphology and especially the electronic structure of (BaZrO{sub 3}). This work consisted in production of barium zirconate powders doped 1-2-4-8-16% (Hf) using (MAH) method. For the characterization of the powders was employed methods : a) X-ray diffraction, b) Raman Spectroscopy, c) Xanes, d) photoluminescence spectroscopy. After the electronic and structural characterization the powders were introduced in a polymeric resin (nylon-BZO), one new characterizations will be performed to validate the results obtained in the production of films to the results already obtained for the powders. We conclude so far, that the powders-doped with 16% Hf has an intense luminescent emission compared to the powders with less concentration of Hf. The small structural change that causes the Hf in (BZO) is considered as a secondary factory. (author)

Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

International Nuclear Information System (INIS)

Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

2014-01-01

Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

Influence of voids in the hybrid layer based on self-etching adhesive systems: a 3-D FE analysis

Directory of Open Access Journals (Sweden)

Ana Paula Martini

2009-01-01

Full Text Available The presence of porosities at the dentin/adhesive interface has been observed with the use of new generation dentin bonding systems. These porosities tend to contradict the concept that etching and hybridization processes occur equally and simultaneously. Therefore, the aim of this study was to evaluate the micromechanical behavior of the hybrid layer (HL with voids based on a self-etching adhesive system using 3-D finite element (FE analysis. MATERIAL AND METHODS: Three FE models (Mr were built: Mr, dentin specimen (41x41x82 μm with a regular and perfect (i.e. pore-free HL based on a self-etching adhesive system, restored with composite resin; Mp, similar to M, but containing 25% (v/v voids in the HL; Mpp, similar to Mr, but containing 50% (v/v voids in the HL. A tensile load (0.03N was applied on top of the composite resin. The stress field was obtained by using Ansys Workbench 10.0. The nodes of the base of the specimen were constrained in the x, y and z axes. The maximum principal stress (σmax was obtained for all structures at the dentin/adhesive interface. RESULTS: The Mpp showed the highest peak of σmax in the HL (32.2 MPa, followed by Mp (30 MPa and Mr (28.4 MPa. The stress concentration in the peritubular dentin was high in all models (120 MPa. All other structures positioned far from voids showed similar increase of stress. CONCLUSION: Voids incorporated into the HL raised the σmax in this region by 13.5%. This behavior might be responsible for lower bond strengths of self-etching and single-bottle adhesives, as reported in the literature.

A method to control the fabrication of etched optical fiber probes with nanometric tips

International Nuclear Information System (INIS)

Tao, Miaomiao; Gu, Ning; Huang, Lan; Jin, Yonglong

2010-01-01

Optical fiber probes with small size tips have attracted much interest in the areas of biosensor and near-field scanning optical microscopy. Chemical etching is a common useful method to fabricate such probes. But it is difficult to study or determine the etching time and control the shape of the fiber during the etching. In this work, a new method combining a fiber optic spectrometer with static chemical etching has been developed to fabricate optical fiber probe nanotips, where the fiber optic spectrometer is used to measure the optical signal during the etching. By calculating and analyzing the testing data, the relationship between the apex angle and the optical signal can be obtained. Accordingly, the process of fabricating optical fibers based on the optical signal can be controlled

Exploration of suitable dry etch technologies for directed self-assembly

Science.gov (United States)

Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

2012-03-01

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

Partially etched Ti3AlC2 as a promising high capacity Lithium-ion battery anode.

Science.gov (United States)

Chen, Xifan; Zhu, Yuanzhi; Zhu, Xiaoquan; Peng, Wenchao; Li, Yang; Zhang, Guoliang; Zhang, Fengbao; Fan, Xiaobin

2018-06-25

MXenes, a family of two-dimensional transition-metal carbide and nitride materials, are supposed to be the promising materials in energy storage because of the high electronic conductivity, hydrophilic surfaces and low diffusion barriers. MXenes are generally prepared by removing the "A" elements (A = Al, Si, Sn, etc.) from their corresponding MAX phases by using hydrofluoric acid (HF) and the other etching agents, despite the fact that these "A" elements usually have great volumetric and gravimetric capacities. Herein, we studied the etching progress of Ti3AlC2 and evaluated their anode performance in Lithium-ion batteries. We found that a partially etched sample (0.5h-peTi3C2Tx) showed much higher capacity (160 mA h g-1, 331.6 mA h cm-3 at 1C) when compared with the fully etched Ti3C2Tx (110 mA h g-1, 190.3 mA h cm-3 at 1C). Besides, a 99% capacity retention was observed even after 1000 cycles in the 0.5h-peTi3C2Tx anode. This interesting result can be explained, at least in part, by the alloying of the residue Al element during lithiation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells

Science.gov (United States)

Ben Rabha, M.; Hajji, M.; Belhadj Mohamed, S.; Hajjaji, A.; Gaidi, M.; Ezzaouia, H.; Bessais, B.

2012-02-01

In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400-1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.

Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

Science.gov (United States)

Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

2016-01-01

The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

Plasma etching: Yesterday, today, and tomorrow

Energy Technology Data Exchange (ETDEWEB)

Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

2013-09-15

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

Plasma etching: Yesterday, today, and tomorrow

International Nuclear Information System (INIS)

Donnelly, Vincent M.; Kornblit, Avinoam

2013-01-01

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

Silicon Nano fabrication by Atomic Force Microscopy-Based Mechanical Processing

International Nuclear Information System (INIS)

Miyake, Sh.; Wang, M.; Kim, J.

2014-01-01

This paper reviews silicon nano fabrication processes using atomic force microscopy (AFM). In particular, it summarizes recent results obtained in our research group regarding AFM-based silicon nano fabrication through mechanochemical local oxidation by diamond tip sliding, as well as mechanical, electrical, and electromechanical processing using an electrically conductive diamond tip. Microscopic three-dimensional manufacturing mainly relies on etching, deposition, and lithography. Therefore, a special emphasis was placed on nano mechanical processes, mechanochemical reaction by potassium hydroxide solution etching, and mechanical and electrical approaches. Several important surface characterization techniques consisting of scanning tunneling microscopy and related techniques, such as scanning probe microscopy and AFM, were also discussed.

Endpoint in plasma etch process using new modified w-multivariate charts and windowed regression

Science.gov (United States)

Zakour, Sihem Ben; Taleb, Hassen

2017-09-01

Endpoint detection is very important undertaking on the side of getting a good understanding and figuring out if a plasma etching process is done in the right way, especially if the etched area is very small (0.1%). It truly is a crucial part of supplying repeatable effects in every single wafer. When the film being etched has been completely cleared, the endpoint is reached. To ensure the desired device performance on the produced integrated circuit, the high optical emission spectroscopy (OES) sensor is employed. The huge number of gathered wavelengths (profiles) is then analyzed and pre-processed using a new proposed simple algorithm named Spectra peak selection (SPS) to select the important wavelengths, then we employ wavelet analysis (WA) to enhance the performance of detection by suppressing noise and redundant information. The selected and treated OES wavelengths are then used in modified multivariate control charts (MEWMA and Hotelling) for three statistics (mean, SD and CV) and windowed polynomial regression for mean. The employ of three aforementioned statistics is motivated by controlling mean shift, variance shift and their ratio (CV) if both mean and SD are not stable. The control charts show their performance in detecting endpoint especially W-mean Hotelling chart and the worst result is given by CV statistic. As the best detection of endpoint is given by the W-Hotelling mean statistic, this statistic will be used to construct a windowed wavelet Hotelling polynomial regression. This latter can only identify the window containing endpoint phenomenon.

GaSb-based single-mode distributed feedback lasers for sensing (Conference Presentation)

Science.gov (United States)

Gupta, James A.; Bezinger, Andrew; Lapointe, Jean; Poitras, Daniel; Aers, Geof C.

2017-02-01

GaSb-based tunable single-mode diode lasers can enable rapid, highly-selective and highly-sensitive absorption spectroscopy systems for gas sensing. In this work, single-mode distributed feedback (DFB) laser diodes were developed for the detection of various trace gases in the 2-3.3um range, including CO2, CO, HF, H2S, H2O and CH4. The lasers were fabricated using an index-coupled grating process without epitaxial regrowth, making the process significantly less expensive than conventional DFB fabrication. The devices are based on InGaAsSb/AlGaAsSb separate confinement heterostructures grown on GaSb by molecular beam epitaxy. DFB lasers were produced using a two step etch process. Narrow ridge waveguides were first defined by optical lithography and etched into the semiconductor. Lateral gratings were then defined on both sides of the ridge using electron-beam lithography and etched to produce the index-grating. Effective index modeling was used to optimize the ridge width, etch depths and the grating pitch to ensure single-lateral-mode operation and adequate coupling strength. The effective index method was further used to simulate the DFB laser emission spectrum, based on a transfer matrix model for light transmission through the periodic structure. The fabricated lasers exhibit single-mode operation which is tunable through the absorption features of the various target gases by adjustment of the drive current. In addition to the established open-path sensing applications, these devices have great potential for optoelectronic integrated gas sensors, making use of integrated photodetectors and possibly on-chip Si photonics waveguide structures.

Formation of plasma induced surface damage in silica glass etching for optical waveguides

International Nuclear Information System (INIS)

Choi, D.Y.; Lee, J.H.; Kim, D.S.; Jung, S.T.

2004-01-01

Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP (inductively coupled plasma) with chrome etch masks, which were patterned by reactive ion etching (RIE) using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough (root-mean square roughness greater than 100 nm) and we call this phenomenon plasma induced surface damage (PISD). Rough surface cannot be used as a platform for hybrid integration because of difficulty in alignment and bonding of active devices. PISD reduces the etch rate of glass and it is very difficult to remove residues on a rough surface. The objective of this study is to elucidate the mechanism of PISD formation. To achieve this goal, PISD formation during different etching conditions of chrome etch mask and silica glass was investigated. In most cases, PISD sources are formed on a glass surface after chrome etching, and metal compounds are identified in theses sources. Water rinse after chrome etching reduces the PISD, due to the water solubility of metal chlorides. PISD is decreased or even disappeared at high power and/or low pressure in glass etching, even if PISD sources were present on the glass surface before etching. In conclusion, PISD sources come from the chrome etching process, and polymer deposition on these sources during the silica etching cause the PISD sources to grow. In the area close to the PISD source there is a higher ion flux, which causes an increase in the etch rate, and results in the formation of a pit

SU-8 etching in inductively coupled oxygen plasma

DEFF Research Database (Denmark)

Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

2013-01-01

Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

Rapid prototyping of 2D glass microfluidic devices based on femtosecond laser assisted selective etching process

Science.gov (United States)

Kim, Sung-Il; Kim, Jeongtae; Koo, Chiwan; Joung, Yeun-Ho; Choi, Jiyeon

2018-02-01

Microfluidics technology which deals with small liquid samples and reagents within micro-scale channels has been widely applied in various aspects of biological, chemical, and life-scientific research. For fabricating microfluidic devices, a silicon-based polymer, PDMS (Polydimethylsiloxane), is widely used in soft lithography, but it has several drawbacks for microfluidic applications. Glass has many advantages over PDMS due to its excellent optical, chemical, and mechanical properties. However, difficulties in fabrication of glass microfluidic devices that requires multiple skilled steps such as MEMS technology taking several hours to days, impedes broad application of glass based devices. Here, we demonstrate a rapid and optical prototyping of a glass microfluidic device by using femtosecond laser assisted selective etching (LASE) and femtosecond laser welding. A microfluidic droplet generator was fabricated as a demonstration of a microfluidic device using our proposed prototyping. The fabrication time of a single glass chip containing few centimeter long and complex-shaped microfluidic channels was drastically reduced in an hour with the proposed laser based rapid and simple glass micromachining and hermetic packaging technique.

High precision AlGaAsSb ridge-waveguide etching by in situ reflectance monitored ICP-RIE

Science.gov (United States)

Tran, N. T.; Breivik, Magnus; Patra, S. K.; Fimland, Bjørn-Ove

2014-05-01

GaSb-based semiconductor diode lasers are promising candidates for light sources working in the mid-infrared wavelength region of 2-5 μm. Using edge emitting lasers with ridge-waveguide structure, light emission with good beam quality can be achieved. Fabrication of the ridge waveguide requires precise etch stop control for optimal laser performance. Simulation results are presented that show the effect of increased confinement in the waveguide when the etch depth is well-defined. In situ reflectance monitoring with a 675 nm-wavelength laser was used to determine the etch stop with high accuracy. Based on the simulations of laser reflectance from a proposed sample, the etching process can be controlled to provide an endpoint depth precision within +/- 10 nm.

Grafting on nuclear tracks using the active sites that remain after the etching process

International Nuclear Information System (INIS)

Mazzei, R.; Bermudez, G. Garcia; Chappa, V.C.; Grosso, M.F. del; Fernandez, A.

2006-01-01

Poly(propylene) foils were irradiated with Ag ions and then chemically etched to produce samples with structured surfaces. After the etching procedure the active sites that remain on the latent track were used to graft acrylic acid. Nuclear tracks before grafting were visualised using a transmission electron microscope. The grafting yields were determined by weight measurements as a function of ion fluence, etching and grafting time, and were also analysed using Fourier transform infrared spectroscopy. Both measurements suggest that the acrylic acid was grafted on etched tracks using the active sites produced by the swift heavy ion beam

Grafting on nuclear tracks using the active sites that remain after the etching process

Energy Technology Data Exchange (ETDEWEB)

Mazzei, R. [Unidad de Aplicaciones Tecnologicas y Agropecuarias, CNEA, 1429 Buenos Aires (Argentina) and Universidad Tecnologica Nacional, Buenos Aires (Argentina)]. E-mail: mazzei@cae.cnea.gov.ar; Bermudez, G. Garcia [U. A. de Fisica, Tandar, CNEA, 1429 Buenos Aires (Argentina); Escuela de Ciencia y Tecnologia, UNSAM, 1653 Buenos Aires (Argentina); Consejo Nacional de Investigaciones Cientificas y Tecnicas (Argentina); Chappa, V.C. [U. A. de Fisica, Tandar, CNEA, 1429 Buenos Aires (Argentina); Grosso, M.F. del [U. A. de Fisica, Tandar, CNEA, 1429 Buenos Aires (Argentina); U. A. de Materiales, CNEA, 1429 Buenos Aires (Argentina); Fernandez, A. [Universidad Tecnologica Nacional, Buenos Aires (Argentina)

2006-09-15

Poly(propylene) foils were irradiated with Ag ions and then chemically etched to produce samples with structured surfaces. After the etching procedure the active sites that remain on the latent track were used to graft acrylic acid. Nuclear tracks before grafting were visualised using a transmission electron microscope. The grafting yields were determined by weight measurements as a function of ion fluence, etching and grafting time, and were also analysed using Fourier transform infrared spectroscopy. Both measurements suggest that the acrylic acid was grafted on etched tracks using the active sites produced by the swift heavy ion beam.

Simulation of convection-driven wet-chemical etching

NARCIS (Netherlands)

Driesen, C.H.

1999-01-01

a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

KAUST Repository

Chand, Umesh

2017-08-05

We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

Measurement of the energy spectrum of {sup 252}Cf fission fragments using nuclear track detectors and digital image processing

Energy Technology Data Exchange (ETDEWEB)

Espinosa, G.; Golzarri, J. I. [UNAM, Instituto de Fisica, Circuito Exterior, Ciudad Universitaria, 04510 Mexico D. F. (Mexico); Castano, V. M. [UNAM, Centro de Fisica Aplicada y Tecnologia Avanzada, Boulevard Juriquilla 3001, Santiago de Queretaro, 76230 Queretaro (Mexico); Gaso, I. [ININ, Carretera Mexico-Toluca s/n, Ocoyoacac 52750, Estado de Mexico (Mexico); Mena, M.; Segovia, N. [UNAM, Instituto de Geofisica, Circuito de la Investigacion Cientifica, Ciudad Universitaria, 04510 Mexico D. F. (Mexico)

2010-02-15

The energy spectrum of {sup 252}Cf fission fragments was measured using nuclear track detectors and digital image analysis system. The detection material was fused silica glass. The detectors were chemically etched in an 8% HF solution. After experimenting with various etching time, it was found that the best resolution of the track diameter distribution was obtained after 30 minutes of etching. Both Gaussian and Lorentzian curves were fit to the track diameter distribution histograms and used to determine the basic parameters of the distribution of the light (N{sub L}) and heavy (N{sub H}) formed peaks and the minimum of the central valley (N{sub V}). Advantages of the method presented here include the fully-automated analysis process, the low cost of the nuclear track detectors and the simplicity of the nuclear track method. The distribution resolution obtained by this method is comparable with the resolution obtained by electronic analysis devices. The descriptive variables calculated were very close to those obtained by other methods based on the use of semiconductor detectors. (Author)

Fiber-optic refractometer based on an etched high-Q π-phase-shifted fiber-Bragg-grating.

Science.gov (United States)

Zhang, Qi; Ianno, Natale J; Han, Ming

2013-07-10

We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q π-phase-shifted fiber-Bragg-grating (πFBG) that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong πFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched πFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive index responsivity of 2.9 nm/RIU (RIU: refractive index unit) at an ambient refractive index of 1.318. The reflection spectrum of the etched πFBG features an extremely narrow notch with a linewidth of only 2.1 pm in water centered at ~1,550 nm, corresponding to a Q-factor of 7.4 × 10(5), which allows for potentially significantly improved sensitivity over refractometers based on regular fiber Bragg gratings.

High-etch-rate bottom-antireflective coating and gap-fill materials using dextrin derivatives in via first dual-Damascene lithography process

Science.gov (United States)

Takei, Satoshi; Sakaida, Yasushi; Shinjo, Tetsuya; Hashimoto, Keisuke; Nakajima, Yasuyuki

2008-03-01

The present paper describes a novel class of bottom antireflective coating (BARC) and gap fill materials using dextrin derivatives. The general trend of interconnect fabrication for such a high performance LSI is to apply cupper (Cu)/ low-dielectric-constant (low-k) interconnect to reduce RC delay. A via-first dual damascene process is one of the most promising processes to fabricate Cu/ low-k interconnect due to its wide miss-alignment margin. The sacrificial materials containing dextrin derivatives under resist for lithography were developed in via-first dual damascene process. The dextrin derivatives in this study was obtained by the esterification of the hydroxyl groups of dextrin resulting in improved solubility in the resist solvents such as propylene glycol monomethylether, propylene glycol monomethylether acetate, and ethyl lactate due to avoid the issue of defects that were caused by incompatability. The etch rate of our developed BARC and gap fill materials using dextrin derivatives was more than two times faster than one of the ArF resists evaluated in a CF4 gas condition using reactive ion etching. The improved etch performance was also verified by comparison with poly(hydroxystyrene), acrylate-type materials and latest low-k materials as a reference. In addition to superior etch performance, these materials showed good resist profiles and via filling performance without voids in via holes.

A history of engraving and etching techniques: developments of manual intaglio printmaking processes, 1400-2000

NARCIS (Netherlands)

Stijnman, A.C.J.

2012-01-01

This book surveys the history of the techniques of engraving, etching and plate printing - i.e. that of manual intaglio printmaking processes - from its beginning in the 1430s until today. These developments are observed in the light of the coherence between the technique of the intaglio print (such

Bend measurement using an etched fiber incorporating a fiber Bragg grating.

Science.gov (United States)

Rauf, Abdul; Zhao, Jianlin; Jiang, Biqiang; Jiang, Yajun; Jiang, Wei

2013-01-15

A fiber Bragg grating (FBG) based bend measurement method using an etched fiber is proposed that utilizes the coupling of the core mode to the cladding and radiation modes at the bending region. An etching region of 99 µm diameter that serves as bend sensing head is achieved at 10 mm upstream the FBG through processing in 40% hydrofluoric acid, while the FBG acts as a narrowband reflector to enhance the sensitivity. The power variation curves are obtained for a wide range of bend angles, but the performance is limited due to the presence of the loss peaks. The sensing response is improved by immersing the etching region in a refractive index matching gel. The results are analyzed by using curve fitting formulas and are in good agreement. A large dynamic range of -27° to +27° and sensitivity of 0.43 dBm/deg is achieved, which can be enhanced by reducing the etched diameter.

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces

Energy Technology Data Exchange (ETDEWEB)

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Simulation of convection-driven wet-chemical etching

NARCIS (Netherlands)

Driesen, C.H.

1999-01-01

In a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

Coulomb-nuclear interference measurements of 168Yb, 176Hf, 178Hf, and 180Hf and lifetime measurements in 186Hg

International Nuclear Information System (INIS)

Nettles, W.G.

1979-01-01

Alpha scattering measurements were performed at center-of-mass energies near the Coulomb barrier. These energies allow for nuclear as well as pure Coulomb forces to play a significant role in the excitation process. The interference of these two forces is very sensitive to the sign of the E4 ground-state moment, whereas pure Coulomb excitation is not. Systematics of the E4 moments of the rare earth mass region indicate a transition in the magnitude and sign of the reduced matrix element of the M(E4) operator between 0 + and 4 + states from small and positive to large and negative between Yb and W. Previous Coulomb-nuclear interference measurements show that this reduced matrix element for 180 Hf is large and negative. The present results agree with that conclusion. It is also shown that the above reduced matrix element for 178 Hf, like that of 180 Hf, is large and negative. The small and positive moment (matrix element) for 168 Yb is seen to be consistent with the experimental data. No conclusions are drawn for the E4 moment in 176 Hf. The measurement of nuclear lifetimes shorter than 500 ps requires the use of plastic scintilltor detectors. These detectors, however have very poor energy resolution. A system is described that uses plastic scintillators with a magnetic lens spectrometer for energy selection. The system was used to measure the lifetime of the 522-keV 0 + sate in 186 Hf. A data analysis method using higher-order distribution moments is also presented

Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

Energy Technology Data Exchange (ETDEWEB)

Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.; Rastogi, Vinayak [TEL Technology Center, America LLC, 255 Fuller Road, Suite 214, Albany, New York 12203 (United States); Koshiishi, Akira [Tokyo Electron Miyagi, Ltd., 1 Techno-Hills, Taiwa-cho, Kurokawa-gun, Miyagi, 9813629 (Japan); Ventzek, Peter L. G. [Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741 (United States)

2016-05-15

Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ion energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.

Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

Self-etching adhesive on intact enamel, with and without pre-etching.

Science.gov (United States)

Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

2012-05-01

Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

International Nuclear Information System (INIS)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

2016-01-01

Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

Science.gov (United States)

Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

2018-04-01

Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

Laser etching of polymer masked leadframes

Science.gov (United States)

Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

1997-02-01

A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

Modeling of altered layer formation during reactive ion etching of GaAs

Energy Technology Data Exchange (ETDEWEB)

Mutzke, A. [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Rai, A., E-mail: Abha.Rai@ipp.mpg.de [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Schneider, R.; Angelin, E.J.; Hippler, R. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str.6, D-17489 Greifswald (Germany)

2012-12-15

Highlights: Black-Right-Pointing-Pointer Experimental result showing the preferential sputtering of GaAs (150 keV Ar{sup +} and thermal O on GaAs) during reactive ion beam etching (RIBE) has been reported. Black-Right-Pointing-Pointer A model based on binary collisions (SDTrimSP) is presented to simulate RIBE. Black-Right-Pointing-Pointer The model is used to explain the reported experimental data and also the results by Grigonis and co-workers [1]. - Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam etching (RIBE) of GaAs in the presence of energetic Ar ions and thermal O atoms. It includes the collisional effects, diffusive processes and chemical reactions taking place in the system. The model parameters are fitted using the experimental observations of Grigonis and co-workers [1] and validated with the experimental results obtained during the GaAs ion etching presented in this paper. A detailed analysis is presented to understand the effect of the diffusive processes and the role of O during RIBE of GaAs. It is shown how the presence of damage caused by the energetic Ar coupled with the presence of thermal O opens up chemical reaction channels which eventually leads to the preferential sputtering of Ga observed at the ion etching facility at University of Greifswald.

Fiber-Optic Refractometer Based on an Etched High-Q ?-Phase-Shifted Fiber-Bragg-Grating

OpenAIRE

Zhang, Qi; Ianno, Natale J.; Han, Ming

2013-01-01

We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q p-phase-shifted fiber-Bragg-grating (pFBG) that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong pFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched pFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive...

Ion-beam etching of ramps in thin film heterostructures

International Nuclear Information System (INIS)

Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

2002-01-01

Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

Personnel neutron dosimetry using electrochemically etched CR-39 foils

International Nuclear Information System (INIS)

Hankins, D.E.; Homann, S.; Westermark, J.

1986-01-01

A personnel neutron dosimetry system has been developed based on the electrochemical etching of CR-39 plastic at elevated temperatures. The doses obtained using this dosimeter system are more accurate than those obtained using other dosimetry systems, especially when varied neutron spectra are encountered. This Cr-39 dosimetry system does not have the severe energy dependence that exists with albedo neutron dosimeters or the fading and reading problems encountered with NTA film. The dosimetry system employs an electrochemical etch procedure that be used to process large numbers of Cr-39 dosimeters. The etch procedure is suitable for operations where the number of personnel requires that many CR-39 dosimeters be processed. Experience shows that one full-time technician can etch and evaluate 2000 foils per month. The energy response to neutrons is fairly flat from about 80 keV to 3.5 MeV, but drops by about a factor of three in the 13 to 16 MeV range. The sensitivity of the dosimetry system is about 7 tracks/cm 2 /mrem, with a background equivalent to about 8 mrem for new CR-39 foils. The limit of sensitivity is approximately 10 mrem. The dosimeter has a significant variation in directional dependence, dropping to about 20% at 90 0 . This dosimeter has been used for personnel neutron dosimetry at the Lawrence Livermore National Laboratory for more tha 18 months. 6 refs., 23 figs., 2 tabs

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

Science.gov (United States)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

2016-06-01

The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Zirconium Zr and hafnium Hf

International Nuclear Information System (INIS)

Busev, A.I.; Tiptsova, V.G.; Ivanov, V.M.

1978-01-01

The basic methods for extracting and determining Zr(4) and Hf(4) are described. Diantipyrinemethane and its alkyl homologs selectively extract Zr and Hf from HNO 3 solutions in the presence of nitrates. Zr is selectively extracted with tetraethyldiamide of heptyl phosphoric acid (in benzene) as well as with 2-thenoyltrifluoroacetone (in an acid). The latter reagents is suitable for rapid determination of 95 Zr in a mixture with 95 Nb and other fragments. The complexometric determination of Zr is based on formation of a stable complex of Zr with EDTA. The titration is carried out in the presence of n-sulfobenzene-azo-pyrocatechol, eriochrome black T. The determination is hindered by Hf, fluoride-, phosphate-, oxalate- and tartrate-ions. The method is used for determining Zr in zircon and eudialyte ore. Zr is determined photometrically with the aid of xylenol orange, arsenazo 3 and pyrocatechol violet (in phosphorites). Hf is determined in the presence of Zr photometrically with the aid of xylenol orange or methyl-thymol blue. The method is based on Zr being masked with hydrogen peroxide in the presence of sulfate-ions

The impact of hydrofluoric acid etching followed by unfilled resin on the biaxial strength of a glass-ceramic.

Science.gov (United States)

Posritong, Sumana; Borges, Alexandre Luiz Souto; Chu, Tien-Min Gabriel; Eckert, George J; Bottino, Marco A; Bottino, Marco C

2013-11-01

To evaluate the null hypotheses that hydrofluoric (HF) acid etching time would neither decrease the biaxial flexural strength of a glass-based veneering ceramic nor enhance it after silane and unfilled resin (UR) applications. Disc-shaped IPS e.max ZirPress specimens were allocated into 12 groups: G1-control (no-etching), G2-30 s, G3-60 s, G4-90 s, G5-120 s, G6-60 s+60 s. Groups (G7-G12) were treated in the same fashion as G1-G6, but followed by silane and UR applications. Surface morphology and roughness (Ra and Rq) of the ceramics were assessed by means of scanning electron microscopy (SEM) and profilometry, respectively. Flexural strength was determined by biaxial testing. Data were analyzed by two-way ANOVA and the Sidak test (α=0.05). Weibull statistics were estimated and finite element analysis (FEA) was carried out to verify the stress concentration end areas of fracture. The interaction (etching time vs. surface treatment) was significant for Ra (p=0.008) and Rq (0.0075). Resin-treated groups presented significantly lower Ra and Rq than non-treated groups, except for the 60s group (pceramic microstructure and that the UR was able to penetrate into the irregularities. A significant effect of etching time (p=0.029) on flexural strength was seen. G7-G12 presented higher strength than G1-G6 (pceramic flexural strength. Moreover, the flexural strength could be enhanced after UR treatment. Copyright © 2013 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Optical-fiber strain sensors with asymmetric etched structures.

Science.gov (United States)

Vaziri, M; Chen, C L

1993-11-01

Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

The influence of the laser spot size and the pulse number on laser-induced backside wet etching

International Nuclear Information System (INIS)

Boehme, R.; Zimmer, K.

2005-01-01

The laser-induced backside wet etching (LIBWE) of transparent solids at the interface to absorbing liquid is a new promising method for laser microstructuring. The influence of the laser spot size and the applied pulse number to the etch rate were investigated in detail for fused silica and two different liquids. Additional to the significant rise of the etch rate with increasing spot size considerable incubation effects have been observed at low laser fluences and pulse numbers. Based on the bubble formation during LIBWE processing, a relation between the bubble collapse time and the etch rate was ascertained. This relation fits the etch rate dependence on the spot size well. It is assumed that the deposition of decomposition products from the bubble accounts for the spot size influence the etch rate

Excimer laser beam profile recording based on electrochemical etched polycarbonate

International Nuclear Information System (INIS)

Parvin, P.; Jaleh, B.; Zangeneh, H.R.; Zamanipour, Z.; Davoud-Abadi, Gh.R.

2008-01-01

There is no polymeric detector used to register the beam profile of UV lasers. Here, a method is proposed for the measurement of intensive UV beam pattern of the excimer lasers based on the photoablated polycarbonate detector after coherent UV exposure and the subsequent electrochemical etching. UV laser induced defects in the form of self-microstructuring on polycarbonate are developed to replicate the spatial intensity distribution as a beam profiler

Excimer laser beam profile recording based on electrochemical etched polycarbonate

Energy Technology Data Exchange (ETDEWEB)

Parvin, P. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of); Laser Research Center, AEOI, P.O. Box 1165-8486, Tehran (Iran, Islamic Republic of)], E-mail: parvin@aut.ac.ir; Jaleh, B. [Physics Department, Bu-Ali Sina University, Postal Code 65174, Hamedan (Iran, Islamic Republic of); Zangeneh, H.R. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of); Zamanipour, Z. [Laser Research Center, AEOI, P.O. Box 1165-8486, Tehran (Iran, Islamic Republic of); Davoud-Abadi, Gh.R. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of)

2008-08-15

There is no polymeric detector used to register the beam profile of UV lasers. Here, a method is proposed for the measurement of intensive UV beam pattern of the excimer lasers based on the photoablated polycarbonate detector after coherent UV exposure and the subsequent electrochemical etching. UV laser induced defects in the form of self-microstructuring on polycarbonate are developed to replicate the spatial intensity distribution as a beam profiler.

Chemical evolution of Himalayan leucogranites based on an O, U-Pb and Hf study of zircon

Science.gov (United States)

Hopkinson, Thomas N.; Warren, Clare J.; Harris, Nigel B. W.; Hammond, Samantha J.; Parrish, Randall R.

2015-04-01

Crustal melting is a characteristic process at convergent plate margins, where crustal rocks are heated and deformed. Miocene leucogranite sheets and plutons are found intruded into the high-grade metasedimentary core (the Greater Himalayan Sequence, GHS) across the Himalayan orogen. Previously-published Himalayan whole-rock data suggest that these leucogranites formed from a purely meta-sedimentary source, isotopically similar to those into which they now intrude. Bulk rock analyses carry inherent uncertainties, however: they may hide contributions from different contributing sources, and post-crystallization processes such as fluid interaction may significantly alter the original chemistry. In contrast, zircon is more able to retain precise information of the contributing sources of the melt from which it crystallises whilst its resistant nature is impervious to post-magmatic processes. This multi-isotope study of Oligocene-Miocene leucogranite zircons from the Bhutan Himalaya, seeks to differentiate between various geochemical processes that contribute to granite formation. Hf and O isotopes are used to detect discrete changes in melt source while U-Pb isotopes provide the timing of zircon crystallisation. Our data show that zircon rims of Himalayan age yield Hf-O signatures that lie within the previously reported whole-rock GHS field, confirming the absence of a discernible mantle contribution to the leucogranite source. Importantly, we document a decrease in the minimum ɛHf values during Himalayan orogenesis through time, correlating to a change in Hf model age from 1.4 Ga to 2.4 Ga. Nd model ages for the older Lesser Himalayan metasediments (LHS) that underthrust the GHS are significantly older than those for the GHS (2.4-2.9 Ga compared with 1.4-2.2 Ga), and as such even minor contributions of LHS material incorporated into a melt would significantly increase the resulting Hf model age. Hence our leucogranite data suggest either a change of source within

TID measurement using oblique transmissions of HF pulses

Science.gov (United States)

Galkin, Ivan; Reinisch, Bodo; Huang, Xueqin; Paznukhov, Vadym; Hamel, Ryan; Kozlov, Alexander; Belehaki, Anna

2017-04-01

The Traveling Ionospheric Disturbance (TID), a wave-like signature of moving plasma density modulation in the ionosphere, is widely acknowledged for its utility in backtracking the anomalous events responsible for the TID generation, and as a major inconvenience to high-frequency (HF) operational systems because of its deleterious impact on the accuracy of navigation and geolocation. The pilot project "Net-TIDE" for the real-time detection and evaluation of TIDs began its operation in 2016 based on the remote-sensing data from synchronized, network-coordinated HF sounding between pairs of DPS4D ionosondes at five participating observatories in Europe. Measurement of all signal properties (Doppler frequency, angle of arrival, and time-of-flight from transmitter to receiver) proved to be instrumental in detecting the TID and deducing the TID parameters: amplitude, wavelength, phase velocity, and direction of propagation. Processing of the measured HF signal data required a specialized signal processing technique that is capable of consistently extracting different signals that have propagated along different ionospheric paths. The multi-path signal environment proved to be the greatest challenge for the reliable TID specification by Net-TIDE, demanding the development of an intelligent system for "signal tracking". The intelligent system is based on a neural network model of a pre-attentive vision capable of extracting continuous signal tracks from the multi-path signal ensemble. Specific examples of the Net-TIDE algorithm suite operation and its suitability for a fully automated TID warning service are discussed.

A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

Science.gov (United States)

Yang, Eui-Hyeok; Wild, Larry

2003-01-01

Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article

Effects of mask imperfections on InP etching profiles

International Nuclear Information System (INIS)

Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

1990-01-01

The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

Reactive ion etching of microphotonic structures

International Nuclear Information System (INIS)

Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

2004-01-01

Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

Enhancement of nucleation during hanging drop protein crystallization using HF treatment of cover glasses

Energy Technology Data Exchange (ETDEWEB)

Guo, Yun-Zhu; Yin, Da-Chuan; Lu, Qin-Qin; Wang, Xi-Kai; Liu, Jun [Key Laboratory for Space Bioscience and Biotechnology, Faculty of Life Sciences, Northwestern Polytechnical University, Xi' an 710072, Shaanxi (China)

2010-02-15

We examined a simple approach, i.e., etching cover glasses using hydrofluoric acid (HF), to determine whether cover glass treatment enhances nucleation in hanging drop protein crystallization. Hen egg white lysozyme and proteinase K were used as the model proteins. We found that the treatment increased the success rate of crystallization. The results indicated that the simple treatment, which is easy to adopt without changing much in the hanging drop method, can be utilized as an alternative method to enhance protein crystallization screens (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Modeling of the angular dependence of plasma etching

International Nuclear Information System (INIS)

Guo Wei; Sawin, Herbert H.

2009-01-01

An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

Fiber-Optic Refractometer Based on an Etched High-Q π-Phase-Shifted Fiber-Bragg-Grating

Directory of Open Access Journals (Sweden)

Ming Han

2013-07-01

Full Text Available We present a compact and highly-sensitive fiber-optic refractometer based on a high-Q p-phase-shifted fiber-Bragg-grating (pFBG that is chemically etched to the core of the fiber. Due to the p phase-shift, a strong pFBG forms a high-Q optical resonator and the reflection spectrum features an extremely narrow notch that can be used for highly sensitivity refractive index measurement. The etched pFBG demonstrated here has a diameter of ~9.3 μm and a length of only 7 mm, leading to a refractive index responsivity of 2.9 nm/RIU (RIU: refractive index unit at an ambient refractive index of 1.318. The reflection spectrum of the etched pFBG features an extremely narrow notch with a linewidth of only 2.1 pm in water centered at ~1,550 nm, corresponding to a Q-factor of 7.4 ´ 105, which allows for potentially significantly improved sensitivity over refractometers based on regular fiber Bragg gratings.

Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

Science.gov (United States)

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2016-04-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

Suitability of N2 plasma for the RIE etching of thin Ag layers

International Nuclear Information System (INIS)

Hrkut, P.; Matay, L.; Kostic, I.; Bencurova, A.; Konecnikova, A.; Nemec, P.; Andok, R.; Hacsik, S.

2013-01-01

Silver layers of 48 nm thickness were evaporated using EB PVD on Si wafers. The masking resist layers were spin-coated and patterned by the EBDW lithography on the ZBA 21 (20 keV) (Carl-Zeiss, Jena; currently Vistec, Ltd.) variable shaped e-beam pattern generator in II SAS. In order to check the etching process in N 2 , we covered a part of the samples containing Ag with a layer of various resists. The samples were dried on a hot-plate and RIE etched in SCM 600 (1 Pa; 20 sccm; 500 W). After 8 minutes the non-masked Ag layer was completely etched away, what testified suitability of N 2 as an etching gas. Also the etch time of 4 minutes showed to be sufficient for etching through the Ag layer. In order to optimize the etching process it was necessary to estimate the etch-rate (E.R.) of suitable resist layers and of the silver layer. The (authors)

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

Science.gov (United States)

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24