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Sample records for hf-based etching processes

  1. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  2. Wet Etching of Heat Treated Atomic Layer Chemical Vapor Deposited Zirconium Oxide in HF Based Solutions

    Science.gov (United States)

    Balasubramanian, Sriram; Raghavan, Srini

    2008-06-01

    Alternative materials are being considered to replace silicon dioxide as gate dielectric material. Of these, the oxides of hafnium and zirconium show the most promise. However, integrating these new high-k materials into the existing complementary metal-oxide-semiconductor (CMOS) process remains a challenge. One particular area of concern is the wet etching of heat treated high-k dielectrics. In this paper, work done on the wet etching of heat treated atomic layer chemical vapor deposited (ALCVD) zirconium oxide in HF based solutions is presented. It was found that heat treated material, while refractory to wet etching at room temperature, is more amenable to etching at higher temperatures when methane sulfonic acid is added to dilute HF solutions. Selectivity over SiO2 is still a concern.

  3. HF-based clad etching of fibre Bragg grating and its utilization in concentration sensing of laser dye in dye–ethanol solution

    Indian Academy of Sciences (India)

    J Kumar; R Mahakud; O Prakash; S K Dixit

    2014-02-01

    This paper presents a fiber Bragg grating (FBG) based sensor to study the concentration of laser dye in dye–ethanol solution. The FBG used in this experiment is indigenously developed using 255 nm UV radiations from copper vapour laser. The cladding of the FBG was partially removed using HF-based etching to make FBG sensitive to changes in the surrounding refractive index. The experimental results on the shift of the Bragg peak wavelength with HF etching and different dye concentration in ethanol are presented. The Bragg wavelength shifted from 1534.670 nm to 1534.225 nm in 30 min and from this point to 1533.97 in the next 2 min. The clad-etched Bragg peak shifted almost linearly from 1534.056 nm to 1534.162 nm as surrounding dye concentration in ethanol changes from 0 mM to 1.5 mM. It was observed that sensitivity depends on the concentration of the solution and found to be 70 pm/mM.

  4. Graphene nanoribbons: Relevance of etching process

    Energy Technology Data Exchange (ETDEWEB)

    Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, Zurich 8093 (Switzerland)

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  5. The research on conformal acid etching process of glass ceramic

    Science.gov (United States)

    Wang, Kepeng; Guo, Peiji

    2014-08-01

    A series of experiments have been done to explore the effect of different conditions on the hydrofluoric acid etching. The hydrofluoric acid was used to etch the glass ceramic called "ZERODUR", which is invented by SCHOTT in Germany. The glass ceramic was processed into cylindrical samples. The hydrofluoric acid etching was done in a plastic beaker. The concentration of hydrofluoric acid and the etching time were changed to measure the changes of geometric tolerance and I observed the surface using a microscope in order to find an appropriate condition of hydrofluoric acid etching.

  6. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  7. Advanced plasma etching processes for dielectric materials in VLSI technology

    Science.gov (United States)

    Wang, Juan Juan

    Manufacturable plasma etching processes for dielectric materials have played an important role in the Integrated Circuits (IC) industry in recent decades. Dielectric materials such as SiO2 and SiN are widely used to electrically isolate the active device regions (like the gate, source and drain from the first level of metallic interconnects) and to isolate different metallic interconnect levels from each other. However, development of new state-of-the-art etching processes is urgently needed for higher aspect ratio (oxide depth/hole diameter---6:1) in Very Large Scale Integrated (VLSI) circuits technology. The smaller features can provide greater packing density of devices on a single chip and greater number of chips on a single wafer. This dissertation focuses on understanding and optimizing of several key aspects of etching processes for dielectric materials. The challenges are how to get higher selectivity of oxide/Si for contact and oxide/TiN for vias; tight Critical Dimension (CD) control; wide process margin (enough over-etch); uniformity and repeatability. By exploring all of the parameters for the plasma etch process, the key variables are found and studied extensively. The parameters investigated here are Power, Pressure, Gas ratio, and Temperature. In particular, the novel gases such as C4F8, C5F8, and C4F6 were studied in order to meet the requirements of the design rules. We also studied CF4 that is used frequently for dielectric material etching in the industry. Advanced etch equipment was used for the above applications: the medium-density plasma tools (like Magnet-Enhanced Reactive Ion Etching (MERIE) tool) and the high-density plasma tools. By applying the Design of Experiments (DOE) method, we found the key factors needed to predict the trend of the etch process (such as how to increase the etch rates, selectivity, etc.; and how to control the stability of the etch process). We used JMP software to analyze the DOE data. The characterization of the

  8. Reliability study of Zr and Al incorporated Hf based high-k dielectric deposited by advanced processing

    Science.gov (United States)

    Bhuyian, Md Nasir Uddin

    Hafnium-based high-kappa dielectric materials have been successfully used in the industry as a key replacement for SiO2 based gate dielectrics in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with higher kappa values in order to scale the equivalent oxide thickness (EOT) to 0.7 nm or below while achieving low defect densities. In addition, next generation devices need to meet challenges like improved channel mobility, reduced gate leakage current, good control on threshold voltage, lower interface state density, and good reliability. In order to overcome these challenges, improvements of the high-kappa film properties and deposition methods are highly desirable. In this dissertation, a detail study of Zr and Al incorporated HfO 2 based high-kappa dielectrics is conducted to investigate improvement in electrical characteristics and reliability. To meet scaling requirements of the gate dielectric to sub 0.7 nm, Zr is added to HfO2 to form Hf1-xZrxO2 with x=0, 0.31 and 0.8 where the dielectric film is deposited by using various intermediate processing conditions, like (i) DADA: intermediate thermal annealing in a cyclical deposition process; (ii) DSDS: similar cyclical process with exposure to SPA Ar plasma; and (iii) As-Dep: the dielectric deposited without any intermediate step. MOSCAPs are formed with TiN metal gate and the reliability of these devices is investigated by subjecting them to a constant voltage stress in the gate injection mode. Stress induced flat-band voltage shift (DeltaVFB), stress induced leakage current (SILC) and stress induced interface state degradation are observed. DSDS samples demonstrate the superior characteristics whereas the worst degradation is observed for DADA samples. Time dependent dielectric breakdown (TDDB) shows that DSDS Hf1-xZrxO2 (x=0.8) has the superior characteristics with reduced oxygen vacancy, which is affiliated to

  9. Study of reactive ion etching for reverse tone nanoimprint process

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, Y; Yanagisawa, M; Yoshinaga, H; Hiratsuka, K, E-mail: tsuji-yukihiro@sei.co.j [Fiber-optics Core Devices R and D Department, Transmission Devices R and D Laboratories, Sumitomo Electric Industries, LTD. 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa, 244-8588 (Japan)

    2009-11-15

    We have used reverse nanoimprint for fabricating diffraction gratings of distributed feedback laser diodes. Generation of residues in the etching process of resin is a serious issue leading to poor line edge roughness of the grating patterns. We have found that the residues are composed of oxide products from Si-containing resin. We have successfully suppressed the generation of the residues by optimizing oxygen partial pressure of reactive ion etching (RIE). We have also succeeded in effectively removing the residues by utilizing sputtering effect of RIE.

  10. The wettability between etching solutions and the surface of multicrystalline silicon wafer during metal-assisted chemical etching process

    Science.gov (United States)

    Niu, Y. C.; Liu, Z.; Liu, X. J.; Gao, Y.; Lin, W. L.; Liu, H. T.; Jiang, Y. S.; Ren, X. K.

    2017-01-01

    In order to investigate the wettability of multicrystalline silicon (mc-Si) with the etching solutions during metal-assisted chemical etching process, different surface structures were fabricated on the p-type multi-wire slurry sawn mc-Si wafers, such as as-cut wafers, polished wafers, and wafers etched in different solutions. The contact angles of different etching solutions on the surfaces of the wafers were measured. It was noted that all contact angles of etching solutions were smaller than the corresponding ones of deionized water, but the contact angles of different etching solutions were quite different. Among the contact angles of the etching solutions of AgNO3-HF, H2O2-HF, TMAH and HNO3-HF, the contact angle of TMAH solution was much larger than the others and that of HNO3-HF solution was much smaller. It is suggested that the larger contact angle may lead to an unevenly etching of silicon wafer due to the long retention of big bubbles on the wafers in the etching reaction, which should be paid attention to and overcome.

  11. Superhydrophobic coatings for aluminium surfaces synthesized by chemical etching process

    Directory of Open Access Journals (Sweden)

    Priya Varshney

    2016-10-01

    Full Text Available In this paper, the superhydrophobic coatings on aluminium surfaces were prepared by two-step (chemical etching followed by coating and one-step (chemical etching and coating in a single step processes using potassium hydroxide and lauric acid. Besides, surface immersion time in solutions was varied in both processes. Wettability and surface morphologies of treated aluminium surfaces were characterized using contact angle measurement technique and scanning electron microscopy, respectively. Microstructures are formed on the treated aluminium surfaces which lead to increase in contact angle of the surface (>150°. Also on increasing immersion time, contact angle further increases due to increase in size and depth of microstructures. Additionally, these superhydrophobic coatings show excellent self-cleaning and corrosion-resistant behavior. Water jet impact, floatation on water surface, and low temperature condensation tests assert the excellent water-repellent nature of coatings. Further, coatings are to be found mechanically, thermally, and ultraviolet stable. Along with, these coatings are found to be excellent regeneration ability as verified experimentally. Although aforesaid both processes generate durable and regenerable superhydrophobic aluminium surfaces with excellent self-cleaning, corrosion-resistant, and water-repellent characteristics, but one-step process is proved more efficient and less time consuming than two-step process and promises to produce superhydrophobic coatings for industrial applications.

  12. Multi-layer VEB modeling: capturing interlayer etch process effects for multi-patterning process

    Science.gov (United States)

    Hu, Lin; Jung, Sunwook; Li, Jianliang; Kim, Young; Bar, Yuval; Lobb, Granger; Liang, Jim; Ogino, Atsushi; Sturtevant, John; Bailey, Todd

    2016-03-01

    Self-Aligned Via (SAV) process is commonly used in back end of line (BEOL) patterning. As the technology node advances, tightening CD and overlay specs require continuous improvement in model accuracy of the SAV process. Traditional single layer Variable Etch Bias (VEB) model is capable of describing the micro-loading and aperture effects associated with the reactive ion etch (RIE), but it does not include effects from under layers. For the SAV etch, a multi-layer VEB model is needed to account for the etch restriction from metal trenches. In this study, we characterize via post-etch dimensions through pitch and through metal trench widths, and show that VEB model prediction accuracy for SAV CDs after SAV formation can be significantly improved by applying a multi-layer scheme. Using a multi-layer VEB, it is demonstrated that the output via size changes with varying trench dimensions, which matches the silicon results. The model also reports via shape post-etch as a function of trench environment, where elliptical vias are correctly produced. The multi-layer VEB model can be applied both multi-layer correction and verification in full chip flow. This paper will also suggest that the multi-layer VEB model can be used in other FEOL layers with interlayer etch process effects, such as gate cut, to support the robustness of new model.

  13. Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

    Science.gov (United States)

    Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

    2017-06-01

    The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

  14. Aerosol chemistry in Titan's ionosphere: simultaneous growth and etching processes

    Science.gov (United States)

    Carrasco, Nathalie; Cernogora, Guy; Jomard, François; Etcheberry, Arnaud; Vigneron, Jackie

    2016-10-01

    Since the Cassini-CAPS measurements, organic aerosols are known to be present and formed at high altitudes in the diluted and partially ionized medium that is Titan's ionosphere [1]. This unexpected chemistry can be further investigated in the laboratory with plasma experiments simulating the complex ion-neutral chemistry starting from N2-CH4 [2]. Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan's atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan's atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan's atmosphere.The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions is explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes [3]. The impact for our understanding of Titan's aerosols chemical composition is important. Our study shows that chemical growth and etching process are simultaneously at stake in Titan's ionosphere. The more the aerosols stay in the ionosphere, the more graphitized they get through etching process. In order to infer Titan's aerosols composition, our work highlights a need for constraints on the residence time of aerosols in Titan's ionosphere. [1] Waite et al. (2009) Science , 316, p. 870[2] Szopa et al. (2006) PSS, 54, p. 394[3] Carrasco et al. (2016) PSS, 128, p. 52

  15. Formation of aligned silicon nanowire on silicon by electroless etching in HF solution

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, N.; Douani, R. [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Hadjersi, T., E-mail: hadjersi@yahoo.co [Unite de Developpement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Boukherroub, R. [Institut de Recherche Interdisciplinaire (IRI, FRE 2963), Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France)

    2009-12-15

    It was demonstrated that the etching in HF-based aqueous solution containing AgNO{sub 3} and Na{sub 2}S{sub 2}O{sub 8} as oxidizing agents or by Au-assisted electroless etching in HF/H{sub 2}O{sub 2} solution at 50 deg. C yields films composed of aligned Si nanowire (SiNW). SiNW of diameters {approx}10 nm were formed. The morphology and the photoluminescence (PL) of the etched layer as a function of etching solution composition were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and photoluminescence. It was demonstrated that the morphology and the photoluminescence of the etched layers strongly depends on the type of etching solution. Finally, a discussion on the formation process of the silicon nanowires is presented.

  16. Thermal compression chip interconnection using organic solderability preservative etched substrate by plasma processing.

    Science.gov (United States)

    Cho, Sung-Won; Choi, JoonYoung; Chung, Chin-Wook

    2014-12-01

    The solderability of copper organic solderbility preservative (CuOSP) finished substrate was enhanced by the plasma etching. To improve the solderability of TC interconnection with the CuOSP finished substrate, the plasma etching process is used. An Oxygen-Hydrogen plasma treatment process is performed to remove OSP material. To prevent the oxidation by oxygen plasma treatment, hydrogen reducing process is also performed before TC interconnection process. The thickness of OSP material after plasma etching is measured by optical reflection method and the component analysis by Auger Electron Spectroscopy is performed. From the lowered thickness, the bonding force of TC interconnection after OSP etching process is lowered. Also the electrical open/short test was performed after assembling the completed semiconductor packaging. The improved yield due to the plasma etching process is achieved.

  17. Advanced simulation technology for etching process design for CMOS device applications

    Science.gov (United States)

    Kuboi, Nobuyuki; Fukasawa, Masanaga; Tatsumi, Tetsuya

    2016-07-01

    Plasma etching is a critical process for the realization of high performance in the next generation of CMOS devices. To predict and control fluctuations in the etching properties accurately during mass production, it is essential that etching process simulation technology considers fluctuations in the plasma chamber wall conditions, the effects of by-products on the critical dimensions, the Si recess dependence on the wafer open area ratio and local pattern structure, and the time-dependent plasma-induced damage distribution associated with the three-dimensional feature scale profile at the 100 nm level. This consideration can overcome the issues with conventional simulations performed under the assumed ideal conditions, which are not accurate enough for practical process design. In this article, these advanced process simulation technologies are reviewed, and, from the results of suitable process simulations, a new etching system that automatically controls the etching properties is proposed to enable stable CMOS device fabrication with high yields.

  18. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  19. Level set simulations of the anisotropic wet etching process for device fabrication in nanotechnologies

    Directory of Open Access Journals (Sweden)

    Rađenović Branislav

    2010-01-01

    Full Text Available Chemical etching is employed as micromachining manufacturing process to produce micron-size components. As a semiconductor wafer is extremely expensive due to many processing steps involved in the making thereof, the need to critically control the etching end point in an etching process is highly desirable. It was found that not only the etchant and temperature determine the exact anisotropy of etched silicon. The angle between the silicon surface and the mask was also shown to play an important role. In this paper, angular dependence of the etching rate is calculated on the base of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal <100>, <110>, <111> directions in KOH solutions. The calculations are performed using an extension of the sparse field method for solving three dimensional (3D level set equations that describe the morphological surface evolution during etching process. The analysis of the obtained results confirm that regardless of the initial shape the profile evolution ends with the crystal form composed of the fastest etching planes, {110} in our model.

  20. Continuous Process for the Etching, Rinsing and Drying of MEMS Using Supercritical Carbon Dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Min, Seon Ki; Han, Gap Su; You, Seong-sik [Korea University of Technology and Education, Cheonan (Korea, Republic of)

    2015-10-15

    The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-CO{sub 2} (supercritical-CO{sub 2}) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-CO{sub 2}. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-CO{sub 2} without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, 25 .deg. C) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, 5 .deg. C), we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-CO{sub 2} (7.5 Mpa, 40 .deg. C), we had as good results as those of the case using gas-CO{sub 2}. Besides the processing time was shortened compared with that of the case of using gas-CO{sub 2}.

  1. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    Production of large-area flat panel displays (FPDs) involves several pattern transfer and device fabrication steps that can be performed with dry etching technologies. Even though the dry etching using capacitively coupled plasma is generally used to maintain high etch uniformity, due to the need...... for the higher processing rates in FPDs, high-density plasma processing tools that can handle larger-area substrate uniformly are more intensively studied especially for the dry etching of polysilicon thin films. In the case of FPD processing, the current substrate size ranges from 730 × 920 mm (fourth...... generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  2. Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

    Science.gov (United States)

    Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

    2016-01-01

    A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

  3. EUV process establishment through litho and etch for N7 node

    Science.gov (United States)

    Kuwahara, Yuhei; Kawakami, Shinichiro; Kubota, Minoru; Matsunaga, Koichi; Nafus, Kathleen; Foubert, Philippe; Mao, Ming

    2016-03-01

    Extreme ultraviolet lithography (EUVL) technology is steadily reaching high volume manufacturing for 16nm half pitch node and beyond. However, some challenges, for example scanner availability and resist performance (resolution, CD uniformity (CDU), LWR, etch behavior and so on) are remaining. Advance EUV patterning on the ASML NXE:3300/ CLEAN TRACK LITHIUS Pro Z- EUV litho cluster is launched at imec, allowing for finer pitch patterns for L/S and CH. Tokyo Electron Ltd. and imec are continuously collabo rating to develop manufacturing quality POR processes for NXE:3300. TEL's technologies to enhance CDU, defectivity and LWR/LER can improve patterning performance. The patterning is characterized and optimized in both litho and etch for a more complete understanding of the final patterning performance. This paper reports on post-litho CDU improvement by litho process optimization and also post-etch LWR reduction by litho and etch process optimization.

  4. Effect of wet etching process on the morphology and transmittance of fluorine doped tin oxide (FTO)

    Science.gov (United States)

    Triana, S. L.; Kusumandari; Suryana, R.

    2016-11-01

    Wet etching process was performed on the surface of FTO. The FTO coated glasses subtrates with size of 2×2 cm covered by screen were patterned using zinc powder and concentrated hydrochloric acid (1 M). The substrates were then cleaned in ultrasonic baths of special detergent(helmanex) diluted in deionized water and isopropanol in sequence. The screens with various of hole size denotes by T32, T49 and T55 were used in order to create a pattern of surface textured. The atomic force microscopy (AFM) image revealed that wet etching process changes the morphology of FTO. It indicates that texturization occured. Moreover, from the UV-Vis Spectrophotometer measurement, the transmittance of FTO increase after wet etching process. The time of etching and pattern of screen were affect to the morphology and the transmittance of FTO.

  5. Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

    Directory of Open Access Journals (Sweden)

    Jian Yang

    2015-02-01

    Full Text Available We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.

  6. N2 plasma etching processes of microscopic single crystals of cubic boron nitride

    Science.gov (United States)

    Tamura, Takahiro; Takami, Takuya; Yanase, Takashi; Nagahama, Taro; Shimada, Toshihiro

    2017-06-01

    We studied the N2 plasma etching of cubic boron nitride (cBN). We have developed experimental techniques for handling 200-µm-size single crystals for the preparation of surfaces with arbitrary crystal indexes, plasma processes, and surface analyses. We successfully prepared smooth surfaces of cBN with roughness smaller than 10 nm and found that the etching behavior was strongly influenced by the surface indexes. The morphology of the etched surfaces can be explained by the chemical stability of (111)B surfaces.

  7. A process study of electron beam nano-lithography and deep etching with an ICP system

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    A systemic process study on an electron beam nanolithography system operating at 100kV was pre-sent.The exposure conditions were optimized for resist ZEP520A.Grating structures with line/space of 50nm/50nm were obtained in a reasonably thick resist which is beneficial to the subsequent pattern transfer technique.The ICP etching process conditions was optimized.The role of etching parameters such as source power,gas pressure,and gas flow rate on the etching result was also discussed.A grating structure with line widths as small as 100nm,duty cycles of 0.5,depth of 900nm,and the side-wall scalloping as small as 5nm on a silicon substrate was obtained.The silicon deep etching technique for structure sizes smaller than 100nm is very important for the fabrication of nano-optical devices working in the visible regime.

  8. Study of etching processes in the GEM detectors

    CERN Document Server

    Zavazieva, Darina

    2016-01-01

    Gaseous Electron Multiplier (GEM) detectors are known to operate stably at high gains and high particle fluxes. Though, at very high gains and fluxes it was observed that the insulating polyimide layer between the GEM electrodes gets etched, changing the original shape of the hole, and therefore varying the gain and the energy resolution of the detector. The idea of the project to observe degradation effect of the GEM foils during the Triple GEM detector operation in extreme conditions under X-ray radiation.

  9. Deep silicon etch for biology MEMS fabrication: review of process parameters influence versus chip design

    Science.gov (United States)

    Magis, T.; Ballerand, S.; Bellemin Comte, A.; Pollet, Olivier

    2013-03-01

    Micro-system for biology is a growing market, especially for micro-fluidic applications (environment and health). Key part for the manufacturing of biology MEMS is the deep silicon etching by plasma to create microstructures. Usual etching process as an alternation of etching and passivation steps is a well-known method for MEMS fabrication, nowadays used in high volume production for devices like sensors and actuators. MEMS for biology applications are very different in design compared to more common micro-systems like accelerometers for instance. Indeed, their design includes on the same chip structures of very diverse size like narrow pillars, large trenches and wide cavities. This makes biology MEMS fabrication very challenging for DRIE, since each type of feature considered individually would require a specific etch process. Furthermore process parameters suited to match specifications on small size features (vertical profile, low sidewall roughness) induce issues and defects on bigger structures (undercut, micro-masking) and vice versa. Thus the process window is constrained leading to trade-offs in process development. In this paper process parameters such as source and platen powers, pressure, etching and passivation gas flows and steps duration were investigated to achieve all requirements. As well interactions between those different factors were characterized at different levels, from individual critical feature up to chip scale and to wafer scale. We will show the plasma process development and tuning to reach all these specifications. We also compared different chambers configurations of our ICP tool (source wafer distance, plasma diffusion) in order to obtain a good combination of hardware and process. With optimized etching we successfully fabricate micro-fluidic devices like micro-pumps.

  10. Numerical study on photoresist etching processes based on a cellular automata model

    Institute of Scientific and Technical Information of China (English)

    ZHOU ZaiFa; HUANG QingAn; LI WeiHua; LU Wei

    2007-01-01

    For the three-dimensional (3-D) numerical study of photoresist etching processes, the 2-D dynamic cellular automata (CA) model has been successfully extended to a 3-D dynamic CA model. Only the boundary cells will be processed in the 3-D dynamic CA model and the structure of "if-else" description in the simulation program is avoided to speed up the simulation. The 3-D dynamic CA model has found to be stable, fast and accurate for the numerical study of photoresist etching processes. The exposure simulation, post-exposure bake (PEB) simulation and etching simulation are integrated together to further investigate the performances of the CA model. Simulation results have been compared with the available experimental results and the simulations show good agreement with the available experiments.

  11. Numerical study on photoresist etching processes based on a cellular automata model

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    For the three-dimensional (3-D) numerical study of photoresist etching processes, the 2-D dynamic cellular automata (CA) model has been successfully extended to a 3-D dynamic CA model. Only the boundary cells will be processed in the 3-D dy-namic CA model and the structure of “if-else” description in the simulation pro-gram is avoided to speed up the simulation. The 3-D dynamic CA model has found to be stable, fast and accurate for the numerical study of photoresist etching processes. The exposure simulation, post-exposure bake (PEB) simulation and etching simulation are integrated together to further investigate the performances of the CA model. Simulation results have been compared with the available ex-perimental results and the simulations show good agreement with the available experiments.

  12. Experimental Study on Wax Protective Coating for Wet Deep Silicon Etching Processes

    Institute of Scientific and Technical Information of China (English)

    JIANG Jian-liang; ULRICH Hilleringmann

    2006-01-01

    In order to protect the finished structures on the front side during deep silicon wet etching processes,the wax coating for double-sided etching process on the wafer is studied to separate the aforementioned structures from the strong aqueous bases. By way of heating and vacuumization, the air bubbles are expelled from the coating to extend the protection duration. The air pressure in the sealed chamber is 0. 026 7 Pa, and the temperature of the heated wafer is 300 ℃. Two kinds of the wax are used, and the corresponding photos of the etched wafer and the protection times are given. In 75 ℃ 10 % KOH solution, the protection duration is more than 8 h.

  13. Modeling a Dry Etch Process for Large-Area Devices

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.; Hebner, G.A.; Ruby, D.S.; Yang, P.

    1999-07-28

    There has been considerable interest in developing dry processes which can effectively replace wet processing in the manufacture of large area photovoltaic devices. Environmental and health issues are a driver for this activity because wet processes generally increase worker exposure to toxic and hazardous chemicals and generate large volumes of liquid hazardous waste. Our work has been directed toward improving the performance of screen-printed solar cells while using plasma processing to reduce hazardous chemical usage.

  14. Surface loss rate of H and N radicals in H2/N2 plasma etching process

    Science.gov (United States)

    Moon, Chang Sung; Takeda, Keigo; Hayashi, Toshio; Takashima, Seigo; Sekine, Makoto; Setsuhara, Yuichi; Shiratani, Masaharu; Hori, Masaru

    2008-10-01

    As ULSI devices are down to nano-scale size, there have been many efforts to develop low dielectric constant (low-k) materials and establish the plasma etching technology. Especially, the interaction between the plasma and the surface has an enormous influence on characterizing the etching process. However, the reactions in contact with solid surface such as substrate and wall are very complicated and moreover, at present, there are many interactions unknown and they are not fully understood yet. In this study, surface loss probabilities of H, N radicals on stainless steel and organic low-k film surfaces are investigated by vacuum ultraviolet absorption spectroscopy (VUVAS) technique. The changes of H, N radical densities are quantitatively measured in H2/N2 plasma afterglow and the loss rates on each surface are evaluated. It is expected that the development of plasma etching process can be advanced by understanding the reaction of radicals with the surface during organic low-k etching process.

  15. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

    Directory of Open Access Journals (Sweden)

    Seon-Geun Oh

    2014-01-01

    Full Text Available The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz, pressure, and gas flow ratio. For the SiNx:H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES intensity of atomic fluorine (685.1 nm and 702.89 nm and the voltages VH and VL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine (I(F and the square root of the voltages (Vh+Vl on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

  16. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

    Science.gov (United States)

    Yang, Jie; McArdle, Conor; Daniels, Stephen

    2014-01-01

    A Similarity Ratio Analysis (SRA) method is proposed for early-stage Fault Detection (FD) in plasma etching processes using real-time Optical Emission Spectrometer (OES) data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR) statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A), takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.

  17. Similarity ratio analysis for early stage fault detection with optical emission spectrometer in plasma etching process.

    Directory of Open Access Journals (Sweden)

    Jie Yang

    Full Text Available A Similarity Ratio Analysis (SRA method is proposed for early-stage Fault Detection (FD in plasma etching processes using real-time Optical Emission Spectrometer (OES data as input. The SRA method can help to realise a highly precise control system by detecting abnormal etch-rate faults in real-time during an etching process. The method processes spectrum scans at successive time points and uses a windowing mechanism over the time series to alleviate problems with timing uncertainties due to process shift from one process run to another. A SRA library is first built to capture features of a healthy etching process. By comparing with the SRA library, a Similarity Ratio (SR statistic is then calculated for each spectrum scan as the monitored process progresses. A fault detection mechanism, named 3-Warning-1-Alarm (3W1A, takes the SR values as inputs and triggers a system alarm when certain conditions are satisfied. This design reduces the chance of false alarm, and provides a reliable fault reporting service. The SRA method is demonstrated on a real semiconductor manufacturing dataset. The effectiveness of SRA-based fault detection is evaluated using a time-series SR test and also using a post-process SR test. The time-series SR provides an early-stage fault detection service, so less energy and materials will be wasted by faulty processing. The post-process SR provides a fault detection service with higher reliability than the time-series SR, but with fault testing conducted only after each process run completes.

  18. Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond

    Science.gov (United States)

    Dunn, Derren; Sporre, John R.; Deshpande, Vaibhav; Oulmane, Mohamed; Gull, Ronald; Ventzek, Peter; Ranjan, Alok

    2017-03-01

    Increasingly, advanced process nodes such as 7nm (N7) are fundamentally 3D and require stringent control of critical dimensions over high aspect ratio features. Process integration in these nodes requires a deep understanding of complex physical mechanisms to control critical dimensions from lithography through final etch. Polysilicon gate etch processes are critical steps in several device architectures for advanced nodes that rely on self-aligned patterning approaches to gate definition. These processes are required to meet several key metrics: (a) vertical etch profiles over high aspect ratios; (b) clean gate sidewalls free of etch process residue; (c) minimal erosion of liner oxide films protecting key architectural elements such as fins; and (e) residue free corners at gate interfaces with critical device elements. In this study, we explore how hybrid modeling approaches can be used to model a multi-step finFET polysilicon gate etch process. Initial parts of the patterning process through hardmask assembly are modeled using process emulation. Important aspects of gate definition are then modeled using a particle Monte Carlo (PMC) feature scale model that incorporates surface chemical reactions.1 When necessary, species and energy flux inputs to the PMC model are derived from simulations of the etch chamber. The modeled polysilicon gate etch process consists of several steps including a hard mask breakthrough step (BT), main feature etch steps (ME), and over-etch steps (OE) that control gate profiles at the gate fin interface. An additional constraint on this etch flow is that fin spacer oxides are left intact after final profile tuning steps. A natural optimization required from these processes is to maximize vertical gate profiles while minimizing erosion of fin spacer films.2

  19. Quantum cascade laser based monitoring of CF2 radical concentration as a diagnostic tool of dielectric etching plasma processes

    Science.gov (United States)

    Hübner, M.; Lang, N.; Zimmermann, S.; Schulz, S. E.; Buchholtz, W.; Röpcke, J.; van Helden, J. H.

    2015-01-01

    Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF2 radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF2 radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm-1. We measured Doppler-resolved ro-vibrational absorption lines and determined absolute densities using transitions in the ν3 fundamental band of CF2 with the aid of an improved simulation of the line strengths. We found that the CF2 radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.

  20. An Analysis and Research on the Transmission Ratio of Dye Sensitized Solar Cell Photoelectrodes by Using Different Etching Process

    Directory of Open Access Journals (Sweden)

    Chin-Guo Kuo

    2013-01-01

    Full Text Available Classical photoelectrodes for Dye Sensitized Solar Cells (DSSCs were fabricated by using the electrochemical method on the titanium (Ti template, for that the fabrication process would influence the characteristics of the DSSCs. In this study, at first three different methods were used to etch Ti templates from 10 to 17 min, (1 polishing-chemical etching: Ti template was annealed at 450°C for 1 h, abraded using number 80 to 1500 SiC sheet, and then etched in a solution of 5% HF + 95% H2O; (2 electrochemical polishing-chemical etching: Ti template was annealed at 450°C for 1 h, electrolytic polishing with 42% CH3OH + 5% HClO4 + 53% HOCH2CH2OC4H9 solution, and the chemical-etching in a solution of 5% HF + 95% H2O; (3 chemical etching: Ti template was etched in a solution of 5% HF + 95% H2O and annealed at 450°C for 1 h. When the etching time was changed from 10 to 17 min, the thicknesses of Ti templates decreased from 75.3 μm to 14.8 μm, depending on the etching method. After etching process, the TiO2 nanotube arrays were fabricated as the photoelectrode of DSSCs by electrochemical process, in which the Ti as anode and platinum (Pt as cathode. The electrolyte solution included C2H4(OH2, NH4F, and deionized water. After annealing the grown TiO2 nanotube arrays at 450°C for 3 h, we would show that the etching process had large effect on the structure and transmittance ratio of the TiO2 nanotube arrays.

  1. Release etch modeling analysis and the use of laser scanning microscopy for etch time prediction of micromachined structures

    Science.gov (United States)

    Matamis, George; Gogoi, Bishnu P.; Monk, David J.; McNeil, Andrew; Burrows, Veronica A.

    2000-08-01

    An alternative non-destructive analysis method using laser scanning microscopy (LSM) was used to study etch release distances in MEMS pressure sensor. The LSM method eliminates samples preparation and is easy to implement in a MEMS manufacturing environment. In this study, various diaphragm structures were etched using a highly concentrated HF based solution. Experimental etch data were obtained for both SiO2 and PSG films under these various structures. Both the height and the width of the sacrificial layer port/channel had a significant effect on etch rate for both films. As expected, a non-linear etch rate was obtained for both SiO2 and PSG films. Since the HF concentration changes over time in a manufacturing bath process, careful selection of processing time is required in order to fully release MEMS structures. Future theoretical modeling with the assistance of experimental data obtained in this study is being pursued to strengthen past work done by Eaton et al, Monk et al, and Liu et al.

  2. Challenges in the Plasma Etch Process Development in the sub-20nm Technology Nodes

    Science.gov (United States)

    Kumar, Kaushik

    2013-09-01

    For multiple generations of semiconductor technologies, RF plasmas have provided a reliable platform for critical and non-critical patterning applications. The electron temperature of processes in a RF plasma is typically several electron volts. A substantial portion of the electron population is within the energy range accessible for different types of electron collision processes, such as electron collision dissociation and dissociative electron attachment. When these electron processes occur within a small distance above the wafer, the neutral species, radicals and excited molecules, generated from these processes take part in etching reactions impacting selectivity, ARDE and micro-loading. The introduction of finFET devices at 22 nm technology node at Intel marks the transition of planar devices to 3-dimensional devices, which add to the challenges to etch process in fabricating such devices. In the sub-32 nm technology node, Back-end-of-the-line made a change with the implementation of Trench First Metal Hard Mask (TFMHM) integration scheme, which has hence gained traction and become the preferred integration of low-k materials for BEOL. This integration scheme also enables Self-Aligned Via (SAV) patterning which prevents via CD growth and confines via by line trenches to better control via to line spacing. In addition to this, lack of scaling of 193 nm Lithography and non-availability of EUV based lithography beyond concept, has placed focus on novel multiple patterning schemes. This added complexity has resulted in multiple etch schemes to enable technology scaling below 80 nm Pitches, as shown by the memory manufacturers. Double-Patterning and Quad-Patterning have become increasingly used techniques to achieve 64 nm, 56 nm and 45 nm Pitch technologies in Back-end-of-the-line. Challenges associated in the plasma etching of these multiple integration schemes will be discussed in the presentation. In collaboration with A. Ranjan, TEL Technology Center, America

  3. Biomechanical and histomorphometric analysis of etched and non-etched resorbable blasting media processed implant surfaces: an experimental study in dogs.

    Science.gov (United States)

    Marin, Charles; Granato, Rodrigo; Suzuki, Marcelo; Janal, Malvin N; Gil, Jose N; Nemcovsky, Carlos; Bonfante, Estevam A; Coelho, Paulo G

    2010-07-01

    This study characterized the interplay between topography/chemistry and early bone response of etched and no-etched resorbable blasted media (RBM) processed surfaces. Screw-root form Ti-6Al-4V implants treated with alumina blasting/acid-etching (AB/AE), RBM alone (RBM), and RBM + acid-etching (RBMa) were evaluated. The surface was characterized by scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. Implants placed in the tibia of dogs remained 3 and 5 weeks in vivo. Following euthanasia, half of the specimens were torqued to interface failure and the remaining subjected to bone-to-implant contact (BIC) and bone area fraction occupied (BAFO) between threads evaluation. The AB/AE surface was rougher than the RBM and RBMa. Higher levels of calcium and phosphorous were observed for the RBM surface compared to the RBMa. No significant differences were observed in torque, BIC, and BAFO between surfaces. Woven bone formation at 3 weeks and its initial replacement by lamellar bone at 5 weeks were observed around all implants' surfaces.

  4. The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

    Science.gov (United States)

    Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

    2014-11-01

    Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise.

  5. Investigating the process of white etching crack initiation in bearing steel

    Energy Technology Data Exchange (ETDEWEB)

    Gould, Benjamin; Greco, Aaron

    2016-04-01

    White etching cracks (WECs) have been identified as a dominant mode of premature failure within wind turbine gearbox bearings. Though WECs have been reported in the field for over a decade, the conditions leading to WECs, and the process by which this failure culminates, are both highly debated. In previously published work, the generation of WECs on a benchtop scale was linked to sliding at the surface of the test sample, it was also postulated that the generation of WECs was dependent on the cumulative energy that had been applied to the sample over the entirety of the test. In this paper, a three ring on roller bench top test rig is used to systematically alter the cumulative energy that a sample experiences through changes in normal load, sliding, and run time, in an attempt to correlate cumulative energy with the formation of WECs. It was determined that, in the current test setup, the presence of WECs can be predicted by this energy criterion. The authors then used this information to study the process by which WECs initiate. Lastly, it was found that, under the current testing conditions, the formation of a dark etching microstructure precedes the formation of a crack, and a crack precedes the formation of white etching microstructure.

  6. Silicon solar cells textured by reactive ion etching and processed with screen printing

    Energy Technology Data Exchange (ETDEWEB)

    Burgers, A.R.; Tool, C.J.J.; Hylton, J.D.; Weeber, A.W. [ECN Solar and Wind, Netherlands Energy Research Foundation ECN, Petten (Netherlands); Verholen, A.G.B.J.; Gardeniers, J.G.E.; De Boer, M.J.; Elwenspoek, M.C. [MESA Research Institute for Micro Electronics, Materials- and Molecular Engineering, and Sensors and Actuators, University of Twente, Enschede (Netherlands)

    1998-07-01

    Reactive Ion Etching (RIE) can texture multicrystalline silicon wafers very well. RIE has the advantage over alkaline etches that it is not sensitive to the crystallographic orientation. RIE has the advantage over acid etches that it can be controlled much better. This work describes multicrystalline silicon solar cells textured by RIE and processed with an industrial process sequence consisting of mainly screen-printing steps. We also made mini-modules of the RIE textured cells. The RIE texturing parameters can be varied to give different textures. Care must be taken that the texture is sufficiently rough to give a low encapsulated reflectance but not so rough that carriers generated by light absorbed in the texture recombine at the surface and cannot be collected at the p-n junction. The screen printing on RIE textured cells was successful. We were able to make cells with both low reflectance and good quantum efficiency. Due to encapsulation problems we were not able to demonstrate an efficiency gain yet. 10 refs.

  7. A Nanoscale Plasma Etching Process for Pole Tip Recession of Perpendicular Recording Magnetic Head

    Directory of Open Access Journals (Sweden)

    Shoubin LIU

    2016-05-01

    Full Text Available The pole tip of perpendicular recording head is constructed in a stacked structure with materials of NiCoFe, NiFe, Al2O3 and AlTiC. The surfaces of different materials are set at different heights below the air-bearing surface of slider. This paper presented a plasma dry etching process for Pole Tip Recession (PTR based on an ion beam etching system. Ar and O2 mixed plasma at small incident angles have a high removal rate to the nonmagnetic material. It was utilised to etch the reference surface until it reaches the MT value. Low-energy Ar plasma at a small incident angle removes materials with selective ratios of 1 : 1.6 : 2.5 : 2.9 (AlTiC/Al2O3/NiCoFe/NiFe. It was selected to form the PTR. High-energy Ar plasma at a large incident angle exhibits almost same removal rates for all materials. It was adopted to make overall removal while keeping the recessed profile. An atomic force microscope (AFM was used for measuring the recessed heights of pole tip and the MT value of the base surface. A transmission electronic microscopy (TEM was chosen to examine the thickness of subsurface damage. A batch of production showed that the recessed heights can be successfully nanofabricated with the three-step plasma etching process.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12953

  8. Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengjun [Shanghai Jiao Tong University, Research Institute of Micro/Nano Science and Technology, Shanghai (China); Cao, Bin [Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, Wuhan (China); Liu, Sheng [Shanghai Jiao Tong University, Research Institute of Micro/Nano Science and Technology, Shanghai (China); Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics, Wuhan (China); Huazhong University of Science and Technology, Institute of Microsystems, Wuhan (China)

    2011-11-15

    Inductively coupled plasma (ICP) etching of GaN is systemically investigated by changing ICP power/RF bias power, operating pressure, and Cl{sub 2}/BCl{sub 3} gas mixing ratio. The hexagonal etch pits related to screw dislocation existing along GaN epitaxial layer were observed on the etched GaN surface after ICP etching. The intensity of band-edge emission is significantly reduced from the etched n-GaN surface, which reveals that plasma-induced damage are generated after ICP etching. The oblique sidewall is transferred into GaN using a combination of Cl{sub 2}/BCl{sub 3} plasma chemistry and hard mask SiO{sub 2}. By adjusting ICP etching process parameters, oblique sidewalls with various oblique angles can be formed, allowing for conformal metal lines coverage across the mesa structures, which can play an important role in the interconnection of multiple microchips for light emitting diodes (LEDs) fabrication. (orig.)

  9. Scalable shape-controlled fabrication of curved microstructures using a femtosecond laser wet-etching process

    Energy Technology Data Exchange (ETDEWEB)

    Bian, Hao; Yang, Qing; Chen, Feng, E-mail: chenfeng@mail.xjtu.edu.cn; Liu, Hewei; Du, Guangqing; Deng, Zefang; Si, Jinhai; Yun, Feng; Hou, Xun

    2013-07-01

    Materials with curvilinear surface microstructures are highly desirable for micro-optical and biomedical devices. However, realization of such devices efficiently remains technically challenging. This paper demonstrates a facile and flexible method to fabricate curvilinear microstructures with controllable shapes and dimensions. The method composes of femtosecond laser exposures and chemical etching process with the hydrofluoric acid solutions. By fixed-point and step-in laser irradiations followed by the chemical treatments, concave microstructures with different profiles such as spherical, conical, bell-like and parabola were fabricated on silica glasses. The convex structures were replicated on polymers by the casting replication process. In this work, we used this technique to fabricate high-quality microlens arrays and high-aspect-ratio microwells which can be used in 3D cell culture. This approach offers several advantages such as high-efficient, scalable shape-controllable and easy manipulations. - Highlights: • We demonstrate a flexible method to fabricate curvilinear microstructures. • This method composes of femtosecond laser exposures and chemical etching process. • Concave microstructures with different profiles were fabricated on silica glasses. • High-quality microlens arrays and high-aspect-ratio microwells were fabricated.

  10. Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

    Institute of Scientific and Technical Information of China (English)

    Ren Wan-Chun; Liu Bo; Song Zhi-Tang; Xiang Yang-Hui; Wang Zong-Tao; Zhang Bei-Chao; Feng Song-Lin

    2012-01-01

    Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality,purity,and accurate composition control.However,the conventional physical vapor deposition process cannot meet the gapfilling requirement with the critical device dimension scaling down to 90 nm or below.In this study,we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process,especially at the nano-scale critical dimension.The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed.We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling.We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process.We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.

  11. Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process

    NARCIS (Netherlands)

    Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.

    2004-01-01

    The lateral etch rate of AlGaAs in HF in the 'Epitaxial Lift-Off' (ELO) process consists of two parts, an intrinsic and a radius-induced part. The intrinsic part is studied with a new approach in which multiple release layers are introduced in one sample. By letting an essential ELO process paramete

  12. XAFS studies of monodisperse Au nanoclusters formation in the etching process

    Science.gov (United States)

    Yang, Lina; Huang, Ting; Liu, Wei; Bao, Jie; Huang, Yuanyuan; Cao, Yuanjie; Yao, Tao; Sun, Zhihu; Wei, Shiqiang

    2016-05-01

    Understanding the formation mechanism of gold nanoclusters is essential to the development of their synthetic chemistry. Here, by using x-ray absorption fine-structure (XAFS) spectroscopy, UV-Vis and MS spectra, the formation process of monodisperse Au13 nanoclusters is investigated. We find that a critical step involving the formation of smaller Au8-Au11 metastable intermediate clusters induced by the HCl + HSR etching of the polydisperse Aun precursor clusters occurs firstly. Then these intermediate species undergo a size-growth to Au13 cores, followed by a slow structure rearrangement to reach the final stable structure. This work enriches the understanding of cluster formation chemistry and may guide the way towards the design and the controllable synthesis of nanoclusters.

  13. Real time monitoring of reticle etch process tool to investigate and predict critical dimension performance

    Science.gov (United States)

    Deming, Rick; Yung, Karmen; Guglielmana, Mark; Bald, Dan; Baik, Kiho; Abboud, Frank

    2007-03-01

    As mask pattern feature sizes shrink the need for tighter control of factors affecting critical dimensions (CD) increases at all steps in the mask manufacturing process. To support this requirement Intel Mask Operation is expanding its process and equipment monitoring capability. We intend to better understand the factors affecting the process and enhance our ability to predict reticle health and critical dimension performance. This paper describes a methodology by which one can predict the contribution of the dry etch process equipment to overall CD performance. We describe the architecture used to collect critical process related information from various sources both internal and external to the process equipment and environment. In addition we discuss the method used to assess the significance of each parameter and to construct the statistical model used to generate the predictions. We further discuss the methodology used to turn this model into a functioning real time prediction of critical dimension performance. Further, these predictions will be used to modify the manufacturing decision support system to provide early detection for process excursion.

  14. Development of SMD 32.768 kHz tuning fork-type crystals using photolithography and selective etching process. Pt. I. Selective etching of an array of quartz tuning fork resonators

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S. [Samsung Electro-Mechanics Co., Ltd., Suwon City (Korea); Kang, K.M. [National Univ. of Technology, Seoul (Korea). Dept. of Materials Engineering

    2001-05-01

    Negative photoresist photolithography was found superior to previously used positive photoresist photolithography to etch array of quartz tuning forks for use in Qualcomm trademark mobile station modem (MSM), 3000{sup TM} central processing unit (CPU), chips of code division multiple access (CDMA), personal communication system (PCS), and global system for mobile communication (GSM) units. Optimum processing condition was devised for reproducible precision etching of Z-cut quartz wafer into array of tuning forks. Tuning fork pattern was transferred via ordinary photolithographical chromium/quartz glass template using a standard single-sided aligner and subsequent negative photoresist development. A tightly adhering and pinhole-free 600/2000 A chromium/gold mask is coated over the developed photoresist pattern which was subsequently stripped in acetone. This procedure was repeated on the backside of the wafer. With protective metallization area of tuning fork geometry thus formed, etching through quartz wafer was done at 80 C in a {+-} 1.5 C controlled bath containing concentrated solution of ammonium bifluoride to remove unwanted area of the quartz wafer. The quality of quartz wafer surface finish after quartz etching depended primarily on the surface finish of quartz wafer prior to etching and the quality of quartz crystals used. At 80 C, selective etching of 100 {mu}m quartz wafer could be effected within 90 min. Reproducible precision selective etching method has thus been established and enables mass production of miniature tuning fork resonators with electrode patterns on them photolithographically. (orig.)

  15. Temporal evolution of surface structure and morphology in thin-film growth and etching processes

    Science.gov (United States)

    Drotar, Jason Todd

    The temporal evolution of surface structure and morphology in growth and etching processes is of great importance to the understanding of such processes. For example, by looking at the time dependence of the surface roughness, one can often discover the scaling symmetries inherent in a process. In addition to providing clues about what mechanisms might be at work, these symmetries are also of practical interest. While much effort has been devoted to understanding the basic mechanisms that influence the temporal scaling of such systems, many systems still cannot be explained in terms of the known universality classes. Studies of both continuum and discrete models of surface roughening are presented. The temporal scaling of the Kuramoto-Sivashinsky (KS) equation has been studied using direct numerical integration, and the existence of two distinct scaling regimes is observed. The results are discussed in the context of previous computational and analytical results and compared to existing experimental studies of ion sputtering. It is found that low-energy ion sputtering experiments are consistent with the early-time KS scaling regime; while high-energy ion sputtering experiments are consistent with asymptotic Kardar-Parisi-Zhang (KPZ) behavior. Next, the temporal scaling behavior of a line-of-sight model of surface roughening has been studied. The model can be applied to both growth and etching processes. Several different limiting cases for the sticking coefficients have been examined using analytical arguments and computational techniques, and it is found that the scaling exponents are, in some cases, universal. The predicted scaling exponents, in some cases, do not belong to any of the known universality classes and therefore define a new universality class. In another case, the exponents are identical to the exponents predicted by the Edwards-Wilkinson equation. The newly discovered universality classes are used to explain experimentally observed behavior of

  16. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  17. Award-Winning Etching Process Cuts Solar Cell Costs (Revised) (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2011-05-01

    The NREL "black silicon" nanocatalytic wet-chemical etch is an inexpensive, one-step method to minimize reflections from crystalline silicon solar cells. The technology enables high-efficiency solar cells without the use of expensive antireflection coatings.

  18. Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

    Science.gov (United States)

    2015-03-26

    testing. 62 IV. Results and Analysis Chapter Overview In the previous chapter, the process for fabricating and testing ZnO TFTs in this thesis was...this thesis . ............................................................................................. 16 Figure 7: SEM image and small...a subtractive back-etch process for patterning ohmic films on ZnO. 39 Figure 15: Series of drawings and SEM images detailing a typical bi-layer lift

  19. 3-Dimensional Microorifice Fabricated Utilizing Single Undercut Etching Process for Producing Ultrasmall Water and Chitosan Droplets

    Directory of Open Access Journals (Sweden)

    Che-Hsin Lin

    2013-01-01

    Full Text Available This research reports a microfluidic device for producing small droplets via a microorifice and a T-junction structure. The orifice is fabricated using an isotropic undercut etching process of amorphous glass materials. Since the equivalent hydraulic diameter of the produced microorifice can be as small as 1.1 μm, the microdevice can easily produce droplets of the size smaller than 10 μm in diameter. In addition, a permanent hydrophobic coating technique is also applied to modify the main channel to be hydrophobic to enhance the formation of water-based droplets. Experimental results show that the developed microfluidic chip with the ultrasmall orifice can steadily produce water-in-oil droplets with different sizes. Uniform water-in-oil droplets with the size from 60 μm to 6.5 μm in diameter can be formed by adjusting the flow rate ratio of the continuous phase and the disperse phases from 1 to 7. Moreover, curable linear polymer of chitosan droplets with the size smaller than 100 μm can also be successfully produced using the developed microchip device. The microfluidic T-junction with a micro-orifice developed in the present study provides a simple yet efficient way to produce various droplets of different sizes.

  20. The Effect of Ion Current Density on Target Etching in Radio Frequency-Magnetron Sputtering Process

    Institute of Scientific and Technical Information of China (English)

    王庆; 王永富; 巴德纯; 岳向吉

    2012-01-01

    The effect of ion current density of argon plasma on target sputtering in magnetron sputtering process was investigated. Using home-made ion probe with computer-based data acquisition system, the ion current density as functions of discharge power, gas pressure and positions was measured. A double-hump shape was found in ion current density curve after the analysis of the effects of power and pressure. The data demonstrate that ion current density increases with the increase in gas pressure in spite of slightly at the double-hump site, sharply at wave-trough and side positions. Simultaneously, the ion current density increases upon increase in power. Es- pecially, the ion current density steeply increases at the double-hump site. The highest energy of the secondary electrons arising from Larmor precession was found at the double-hump position, which results in high ion density. The target was etched seriously at the double-hump position due to the high ion density there. The data indicates that the increase in power can lead to a high sputtering speed rate.

  1. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  2. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process.

  3. Post-processing of fused silica and its effects on damage resistance to nanosecond pulsed UV lasers.

    Science.gov (United States)

    Ye, Hui; Li, Yaguo; Zhang, Qinghua; Wang, Wei; Yuan, Zhigang; Wang, Jian; Xu, Qiao

    2016-04-10

    HF-based (hydrofluoric acid) chemical etching has been a widely accepted technique to improve the laser damage performance of fused silica optics and ensure high-power UV laser systems at designed fluence. Etching processes such as acid concentration, composition, material removal amount, and etching state (etching with additional acoustic power or not) may have a great impact on the laser-induced damage threshold (LIDT) of treated sample surfaces. In order to find out the effects of these factors, we utilized the Taguchi method to determine the etching conditions that are helpful in raising the LIDT. Our results show that the most influential factors are concentration of etchants and the material etched away from the viewpoint of damage performance of fused silica optics. In addition, the additional acoustic power (∼0.6  W·cm-2) may not benefit the etching rate and damage performance of fused silica. Moreover, the post-cleaning procedure of etched samples is also important in damage performances of fused silica optics. Different post-cleaning procedures were, thus, experiments on samples treated under the same etching conditions. It is found that the "spraying + rinsing + spraying" cleaning process is favorable to the removal of etching-induced deposits. Residuals on the etched surface are harmful to surface roughness and optical transmission as well as laser damage performance.

  4. Molecular dynamic simulation study of plasma etching L10 FePt media in embedded mask patterning (EMP process

    Directory of Open Access Journals (Sweden)

    Jianxin Zhu

    2017-05-01

    Full Text Available Plasma etching process of single-crystal L10-FePt media [H. Wang et al., Appl. Phys. Lett. 102(5 (2013] is studied using molecular dynamic simulation. Embedded-Atom Method [M. S. Daw and M. I. Baskes, Phy. Rev. B 29, 6443 (1984; X. W. Zhou, R. A. Johnson and H. N. G. Wadley, Phy. Rev. B 69, 144113 (2004] is used to calculate the interatomic potential within atoms in FePt alloy, and ZBL potential [J.F. Ziegler, J. P. Biersack and U. Littmark, “The Stopping and Range of Ions in Matter,” Volume 1, Pergamon,1985] in comparison with conventional Lennard-Jones “12-6” potential is applied to interactions between etching gas ions and metal atoms. It is shown the post-etch structure defects can include amorphized surface layer and lattice interstitial point defects that caused by etchant ions passed through the surface layer. We show that the amorphized or damaged FePt lattice surface layer (or “magnetic dead-layer” thickness after etching increases with ion energy for Ar ion impacts, but significantly small for He ions at up to 250eV ion energy. However, we showed that He sputtering creates more interstitial defects at lower energy levels and defects are deeper below the surface compared to Ar sputtering. We also calculate the interstitial defect level and depth as dependence on ion energy for both Ar and He ions. Media magnetic property loss due to these defects is also discussed.

  5. Absolute Intensities of the Vacuum Ultraviolet Spectra in a Metal-Etch Plasma Processing Discharge

    Energy Technology Data Exchange (ETDEWEB)

    Aragon, B.P.; Blain, M.G.; Hamilton, T.W.; Jarecki, R.L.; Woodworth, J.R.

    1998-12-09

    In this paper we report absolute intensities of vacuum ultraviolet and near ultraviolet emission lines (4.8 eV to 18 eV ) for aluminum etching discharges in an inductively coupled plasma reactor. We report line intensities as a function of wafer type, pressure, gas mixture and rf excitation level. IrI a standard aluminum etching mixture containing C12 and BC13 almost all the light emitted at energies exceeding 8.8 eV was due to neutral atomic chlorine. Optical trapping of the WV radiation in the discharge complicates calculations of VUV fluxes to the wafer. However, we see total photon fluxes to the wailer at energies above 8.8 eV on the order of 4 x 1014 photons/cm2sec with anon- reactive wafer and 0.7 x 10 `4 photons/cm2sec with a reactive wtier. The maj ority of the radiation observed was between 8.9 and 9.3 eV. At these energies, the photons have enough energy to create electron-hole pairs in Si02, but may penetrate up to a micron into the Si02 before being absorbed. Relevance of these measurements to vacuum-W photon-induced darnage of Si02 during etching is discussed.

  6. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  7. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  8. Agile dry etching of compound semiconductors for science-based manufacturing using in-situ process control

    Energy Technology Data Exchange (ETDEWEB)

    ASHBY,CAROL I.; VAWTER,GREGORY A.; BREILAND,WILLIAM G.; BRUSKAS,LARRY A.; WOODWORTH,JOSEPH R.; HEBNER,GREGORY A.

    2000-02-01

    In-situ optical diagnostics and ion beam diagnostics for plasma-etch and reactive-ion-beam etch (RIBE) tools have been developed and implemented on etch tools in the Compound Semiconductor Research Laboratory (CSRL). The optical diagnostics provide real-time end-point detection during plasma etching of complex thin-film layered structures that require precision etching to stop on a particular layer in the structure. The Monoetch real-time display and analysis program developed with this LDRD displays raw and filtered reflectance signals that enable an etch system operator to stop an etch at the desired depth within the desired layer. The ion beam diagnostics developed with this LDRD will permit routine analysis of critical ion-beam profile characteristics that determine etch uniformity and reproducibility on the RIBE tool.

  9. Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

    DEFF Research Database (Denmark)

    Andersen, Bo Asp Møller; Hansen, Ole; Kristensen, Martin

    1997-01-01

    The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber. It was ......The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber....... It was found that, for a constant load of silicon exposed to the plasma, the etch rate variation can be controlled through the applied rf power, the chamber pressure, and the gas mixture. It was also found that the etch rate uniformity varies with the load of silicon exposed to the plasma. The result...... is a balance between the flux of neutral radicals and the flux of energetic ions to the surface. This balance is due to the RIE etch mechanism, which involves synergism between the two fluxes. (C) 1997 American Vacuum Society....

  10. Direct fabrication of compound-eye microlens array on curved surfaces by a facile femtosecond laser enhanced wet etching process

    Science.gov (United States)

    Bian, Hao; Wei, Yang; Yang, Qing; Chen, Feng; Zhang, Fan; Du, Guangqing; Yong, Jiale; Hou, Xun

    2016-11-01

    We report a direct fabrication of an omnidirectional negative microlens array on a curved substrate by a femtosecond laser enhanced chemical etching process, which is utilized as a molding template for duplicating bioinspired compound eyes. The femtosecond laser treatment of the curved glass substrate employs a common x-y-z stage without rotating the sample surface perpendicular to the laser beam, and uniform, omnidirectional-aligned negative microlenses are generated after a hydrofluoric acid etching. Using the negative microlens array on the concave glass substrate as a molding template, we fabricate an artificial compound eye with 3000 positive microlenses of 95-μm diameter close-packed on a 5-mm polymer hemisphere. Compared to the transferring process, the negative microlenses directly fabricated on the curved mold by our method are distortion-free, and the duplicated artificial eye presents clear and uniform imaging capabilities. This work provides a facile and efficient route to the fabrication of microlenses on any curved substrates without complicated alignment and motion control processes, which has the potential for the development of new microlens-based devices and systems.

  11. Silicon Deep Etching Techniques for MEMS Devices

    Institute of Scientific and Technical Information of China (English)

    WU Ying; OU Yi-hong; JIANG Yong-qing; LI Bin

    2003-01-01

    Silicon deep etching technique is the key fabrication step in the development of MEMS. The mask selectivity and the lateral etching control are the two primary factors that decide the result of deep etching process. These two factors are studied in this paper. The experimental results show that the higher selectivity can be gotten when F- gas is used as etching gas and Al is introduced as mask layer. The lateral etching problems can be solved by adjusting the etching condition, such as increasing the RF power, changing the gas composition and flow volume of etching machine.

  12. Enhancing hydrophilicity and water permeability of PET track-etched membranes by advanced oxidation process

    Science.gov (United States)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Zdorovets, Maxim V.; Taltenov, Abzal A.

    2015-12-01

    In this study we present results on the application of advanced oxidation systems for effective and non-toxic oxidation of poly(ethylene terephthalate) track-etched membranes (PET TeMs) to improve their wettability and water transport properties. Two oxidizing systems: H2O2 under UV irradiation (H2O2/UV) and Fenton system under visible light (Fenton/H2O2/Vis) were compared. The surface of functionalized PET TeMs was characterized by using colorimetric assay, contact angle measurements and X-ray photoelectron spectroscopy (XPS). Results clearly showed that water permeability of PET TeMs treated with H2O2/UV was improved by 28 ± 5% compared with etched-only membrane, the same parameter was found to increase by 13 ± 4% in the case of Fenton/H2O2/Vis treatment. The proposed oxidation technique is very simple, environment friendly and not requiring special equipment or expensive chemicals. The surface hydrophilicity of the membranes stored for 360 days in air between paper sheets was analyzed by contact angle test, colorimetric assay to measure concentration of carboxylic groups on the surface with toluidine blue and XPS analysis. The hydrophilic properties of oxidized PET TeMs were found to be stable for a long period of time.

  13. Enhancing hydrophilicity and water permeability of PET track-etched membranes by advanced oxidation process

    Energy Technology Data Exchange (ETDEWEB)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A. [Institute of Nuclear Physics, Ibrahimov Str., 1, 050032 Almaty (Kazakhstan); The L.N. Gumilyov Eurasian National University, Satpaev Str., 5, 010008 Astana (Kazakhstan); Güven, Olgun [Department of Chemistry, Hacettepe University, 06800 Beytepe, Ankara (Turkey); Zdorovets, Maxim V. [Institute of Nuclear Physics, Ibrahimov Str., 1, 050032 Almaty (Kazakhstan); The L.N. Gumilyov Eurasian National University, Satpaev Str., 5, 010008 Astana (Kazakhstan); Taltenov, Abzal A. [The L.N. Gumilyov Eurasian National University, Satpaev Str., 5, 010008 Astana (Kazakhstan)

    2015-12-15

    In this study we present results on the application of advanced oxidation systems for effective and non-toxic oxidation of poly(ethylene terephthalate) track-etched membranes (PET TeMs) to improve their wettability and water transport properties. Two oxidizing systems: H{sub 2}O{sub 2} under UV irradiation (H{sub 2}O{sub 2}/UV) and Fenton system under visible light (Fenton/H{sub 2}O{sub 2}/Vis) were compared. The surface of functionalized PET TeMs was characterized by using colorimetric assay, contact angle measurements and X-ray photoelectron spectroscopy (XPS). Results clearly showed that water permeability of PET TeMs treated with H{sub 2}O{sub 2}/UV was improved by 28 ± 5% compared with etched-only membrane, the same parameter was found to increase by 13 ± 4% in the case of Fenton/H{sub 2}O{sub 2}/Vis treatment. The proposed oxidation technique is very simple, environment friendly and not requiring special equipment or expensive chemicals. The surface hydrophilicity of the membranes stored for 360 days in air between paper sheets was analyzed by contact angle test, colorimetric assay to measure concentration of carboxylic groups on the surface with toluidine blue and XPS analysis. The hydrophilic properties of oxidized PET TeMs were found to be stable for a long period of time.

  14. Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process

    Institute of Scientific and Technical Information of China (English)

    Chen Shan; Pan Tianhong; Li Zhengming; Jang Shi-Shang

    2012-01-01

    This paper proposes to develop a data-driven via's depth estimator of the deep reactive ion etching process based on statistical identification of key variables.Several feature extraction algorithms are presented to reduce the high-dimensional data and effectively undertake the subsequent virtual metrology (VM) model building process.With the available on-line VM model,the model-based controller is hence readily applicable to improve the quality ofa via's depth.Real operational data taken from a industrial manufacturing process are used to verify the effectiveness of the proposed method.The results demonstrate that the proposed method can decrease the MSE from 2.2 × 10-2 to 9 × 10-4 and has great potential in improving the existing DRIE process.

  15. Antireflective porous-silicon coatings for multicrystalline solar cells: the effects of chemical etching and rapid thermal processing

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Palma, R.J.; Martinez-Duart, J.M. [Universidad Autonoma de Madrid (Spain). Dept. de Fisica Aplicada; Instituto de Ciencia des Materiales de Madrid (CSIC) (Spain); Vazquez, L. [Instituto de Ciencia des Materiales de Madrid (CSIC) (Spain); Schnell, M.; Schaefer, S. [Fraunhofer Institute for Solar Energy Systems, Freiburg (Germany)

    2001-08-01

    In this paper, the emitter of multicrystalline silicon solar cells has been chemically etched in order to form porous silicon (PS) layers, usually known as stain-etched PS, to be used at the same time as a selective emitter and as an effective antireflective layer. The optical behaviour of the solar cells in the 250-850 nm wavelength range (5-1.45 eV range) was determined before and after PS formation, resulting in a notable reduction of reflectance after PS formation and a corresponding increase in cell efficiency. The different morphologies of the silicon emitter and metallic contacts, before and after PS formation were analysed by scanning electron microscopy and atomic force microscopy. Furthermore, the electrical properties of both the emitter region and the contacts were investigated, as well as the most significant solar cell parameters before and after PS formation. Finally, the effect of rapid thermal processing in nitrogen and oxygen atmospheres on both the surface morphology and the optical behaviour of PS was studied. (Author)

  16. Cross-Sectional Conductive Atomic Force Microscopy of CdTe/CdS Solar Cells: Effects of Etching and Back-Contact Processes; Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Jiang, C.-S.; Gessert, T. A.; Duda, A. M.; Young, M.; Metzger, W. K.; Li, X.; Al-Jassim, M. M.

    2006-05-01

    We investigated the effects of the etching processes using bromine and nitric-phosphoric acid solutions, as well as of Cu, in the bulk electrical conductivity of CdTe/CdS solar cells using conductive atomic force microscopy (C-AFM). Although the etching process can create a conductive layer on the surface of the CdTe, the layer is very shallow. In contrast, the addition of a thin layer of Cu to the surface creates a conductive layer inside the CdTe that is not uniform in depth, is concentrated at grains boundaries, and may short circuit the device if the CdTe is too thin. The etching process facilitates the Cu diffusion and results in thicker conductive layers. The existence of this inhomogeneous conductive layer directly affects the current transport and is probably the reason for needing thick CdTe in these devices.

  17. Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Wang Xuanyu; Huang, Chi-Hsien; Tsukamoto, Rikako; Samukawa, Seiji [Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Mortemousque, Pierre-Andre; Itoh, Kohei M; Ohno, Yuzo, E-mail: samukawa@ifs.tohoku.ac.jp [Japan Science and Technology Agency, CREST, 5 Sanbancho, Chiyoda, Tokyo 102-0075 (Japan)

    2011-09-07

    The first damage-free top-down fabrication processes for a two-dimensional array of 7 nm GaAs nanodiscs was developed by using ferritin (a protein which includes a 7 nm diameter iron core) bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, to remove the ferritin protein shell without thermal damage to the GaAs, we firstly developed an oxygen-radical treatment method with a low temperature of 280 deg. C. Then, the neutral beam etched the defect-free nanodisc structure of the GaAs using the iron core as an etching mask. As a result, a two-dimensional array of GaAs quantum dots with a diameter of {approx} 7 nm, a height of {approx} 10 nm, a high taper angle of 88 deg. and a quantum dot density of more than 7 x 10{sup 11} cm{sup -2} was successfully fabricated without causing any damage to the GaAs.

  18. Laser-induced damage characteristics in fused silica surface due to mechanical and chemical defects during manufacturing processes

    Science.gov (United States)

    Li, Yaguo; Yuan, Zhigang; Wang, Jian; Xu, Qiao

    2017-06-01

    Mechanical and chemical defects incurred by grinding and polishing as well as post-processing have been recognized as the most influential culprits that hamper the elevation of laser power/energy in high peak power/energy laser systems. In order to find out the causes for limiting the operational power of laser systems, the effects of these defects on laser damage and removal and mitigation of the defects were investigated in detail in the article. Cracks and scratches were created, annealed, etched and damaged so as to reveal the likely effects of mechanical defects on damage and potential techniques to reduce their influence. The results show that HF-based etching can open and smooth cracks/scratches, improving laser-induced damage threshold (LIDT) at scratches by up to >250%. Thermal annealing did heal, to some extent, cracks but the LIDT is little improved. Both HF-etching and leaching proves to be effective in removing metallic contamination during polishing process and handling of optics, which can "contribute" to damage/damage density in fused silica. However, HF-based etching may degrade surface roughness, from 20 nm under some conditions when >20 μm material was etched away while the surface roughness was perceptibly altered by leaching (30 J/cm2 (355 nm @3 ns, beam diameter 400 μm @1/e2), a significant progress.

  19. Acid etching process for fabrication of Bi2Sr2CaCu2O8+x stack

    Institute of Scientific and Technical Information of China (English)

    ZHANG Jie; CHEN Jian; WU JingBo; KANG Lin; XU WeiWei; WU PeiHeng

    2007-01-01

    We adopted a new method, acid etching process, to fabricate the intrinsic Josephson junctions based on the Bi2Sr2CaCu2O8+x single crystals. By soaking the crystals into the dilute hydrochloric acid, we fabricated a junction stack successfully, and meantime made the surrounding area insulated. A certain concentration of hydrochloric acid was used to maintain the roughness of the modified layer. The current-voltage characteristic was achieved through the four terminal measurement. We could control the junctions' number by changing the concentration and the soaking time. We also found that the thickness of the stack was equal to the average height of the insulation layer. Such a simple, convenient and controllable fabrication method with a high yield might widen the applications of the intrinsic Josephson junctions.

  20. 生物电阻抗铜片电极的化学刻蚀工艺%Chemical etching process of copper electrode for bioelectrical impedance technology

    Institute of Scientific and Technical Information of China (English)

    周伟; 宋嵘; 蒋乐伦; 许文平; 梁国开; 程德才; 刘灵蛟

    2012-01-01

    为获得具有强稳定性能的生物电阻抗电极,采用化学刻蚀加工方法,制造出表面具有一系列微结构的金属铜片电极.通过改变加工工艺参数的方法,着重分析刻蚀时间、刻蚀温度、刻蚀液体浓度、样品尺寸等刻蚀工艺参数对铜片电极的蚀刻速率和表面微结构的影响.结果表明:刻蚀速率将随着刻蚀时间的延长而逐渐降低,随着刻蚀温度的升高而逐渐升高,而刻蚀样本尺寸对刻蚀速率的影响不大.选用合适的刻蚀液体浓度(组分3),在室温条件下刻蚀20 min,可以获得具有丰富表面微结构的铜片电极.另外,进行24 h电极对接的连续性交流阻抗测试,与心电电极相比,利用化学刻蚀加工的铜片电极,由于表面具有丰富的表面微结构,可以形成可靠的表面接触,从而具有稳定的交流阻抗值.%In order to obtain bioelectrical impedance electrodes with high stability,the chemical etching process was used to fabricate the copper electrode with a series of surface microstructures.By changing the etching processing parameters,some comparison experiments were performed to reveal the influence of etching time,etching temperature,etching liquid concentration,and sample sizes on the etching rate and surface microstructures of copper electrode.The result shows that the etching rate is decreased with increasing etching time,and is increased with increasing etching temperature.Moreover,it is found that the sample size has little influence on the etching rate.After choosing the reasonable etching liquid composition (formulation 3),the copper electrode with many surface microstructures can be obtained by chemical etching process at room temperature for 20 min.In addition,using the alternating current impedance test of electrode-electrode for 24 h,the copper electrode with a series of surface microstructures fabricated by the etching process presents a more stable impedance value compared with the

  1. Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process

    Science.gov (United States)

    Jeong, Junho; Endoh, Tetsuo

    2017-04-01

    The electric short fail trend of the perpendicular magnetic tunnel junctions (p-MTJs) caused by the ion beam etching (IBE) process is studied at various ion beam angles and cell-to-cell space widths. The number of electric short fails increases markedly at an ion beam angle greater than 35° and a cell-to-cell space width less than 30 nm at the assumed MTJ height including a hard mask (HM) of 20 nm. In order to recover these electric short fails, we propose the selective oxidation process called the oxygen showering post-treatment (OSP). By the OSP process, the number of electric short fails in sub-30-nm-spaced MTJ arrays is reduced from 25 to 0.8%, and the magnetoresistance (MR) is increased from 99 to 120%. By this result, we can verify that the damaged layer is recovered successfully by the OSP, and that the OSP can be a universal post-treatment process even beyond the 20 nm design rule for use in both reactive ion etching and IBE schemes.

  2. Influence of UV illumination on track etching process%UV照射对径迹蚀刻过程的影响

    Institute of Scientific and Technical Information of China (English)

    LIU Qi; ZHU Zhiyong; Maekawa Yasunari; Yoshida Masaru; YAO Side

    2005-01-01

    Truck technology depends decisively on the track structure of the material after irradiation. In order to reveal microstructures of the ion-tracks, many techniques have been applied to characterize the track. Conductometrie method is wildly used in the area as it can monitor in-situ the pore formation and growth processes that are closely related to structures of the ion track[1].In this study, polyethylterephthalate films (PET, 38 μm thick) were irradiated with Xe ions of 450 MeV, 3 × 105ions/cm2. Before etching with aqueous 0.3 M NaOH solution at 40℃, the samples were illuminated with UV light (λ>310nm) in air for different time durations. Pore growth processes during the etching were monitored by the conductometric measurement. Fig. 1 shows the measurement results of radial etching rate of the pore growth in dGl/2/dt (Ω-1/2s-1) with the etching time.a. Without UV illumination, b. UV illuminated for 60 min, c. UV illuminated for 180 min, d. UV illuminated for 720 min As shown in Fig. 1, the etching processes changed dramatically with UV illumination time. (1) The break through time reduced with increased sensitization time, from 8× 104S of the control to about 1 × 104s of the 720 minutes UV illumination. (2) With increased UV illumination time, the shape of the pore growth rate curve changed greatly, f-mally became a shape with a peak and a vale. Formation of the peak implies that pores tended to break-through on completing the UV-light illumination, whereas the vale can be related to the slower etching rate in the track halo where most molecules had been crosslinked by the heavy ion irradiation. After etching for sufficient long time, the pore grew at a constant rate determined by the bulk etching rate.To interpret the measurements, numerical analysis and fitting were carried out, from which information related to the track structures and variations with the UV illumination was obtained.

  3. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  4. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching.

    Science.gov (United States)

    Zhan, Zhan; Li, Wei; Yu, Lingke; Wang, Lingyun; Sun, Daoheng

    2017-02-10

    In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  5. Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

    Directory of Open Access Journals (Sweden)

    Atindra Nath Pal

    2015-07-01

    Full Text Available We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.

  6. Fabrication of Light Extraction Efficiency of Organic Light-Emitting Diodes with 3D Aspherical Microlens by Using Dry Etching Process

    Directory of Open Access Journals (Sweden)

    Y. C. Chen

    2013-01-01

    Full Text Available organic light-emitting diode (OLED can enable a greater artificial contrast ratio and viewing angle compared to liquid crystal display (LCD because OLED pixels directly emit light. There is a shortcoming that the internal quantum efficiency can reach values close to 100%, but about 80% light disperses because of the difference among the refractive indices of the substrate, anode, indium tin oxide (ITO film, and air. In this paper, three dimensions aspherical microlens arrays (3D A-MLAs with substrate modifications are developed to simulate the optical luminous field by using FRED software. This study modified parameters of 3D A-MLAs such as the diameter, fill-factor, aspect ratio, dry etching parameters, and electroforming rates of microlens to improve the extraction efficiency of the OLED. In dry etching, not only the aspect ratio with better extraction rate can be obtained by reactive ion etching (RIE dry etching, but also an undercutting phenomenon can be avoided. The dimensions of 3D A-MLAs can be accurately controlled in the electroforming process used to make a nickel-cobalt (Ni-Co metal mold to achieve the designed dimensions. According to the measured results, the average luminance efficacy of the OLEDs with 3D A-MLAs can be enhanced.

  7. Preface: Special Topic on Atomic and Molecular Layer Processing: Deposition, Patterning, and Etching.

    Science.gov (United States)

    Engstrom, James R; Kummel, Andrew C

    2017-02-07

    Thin film processing technologies that promise atomic and molecular scale control have received increasing interest in the past several years, as traditional methods for fabrication begin to reach their fundamental limits. Many of these technologies involve at their heart phenomena occurring at or near surfaces, including adsorption, gas-surface reactions, diffusion, desorption, and re-organization of near-surface layers. Moreover many of these phenomena involve not just reactions occurring under conditions of local thermodynamic equilibrium but also the action of energetic species including electrons, ions, and hyperthermal neutrals. There is a rich landscape of atomic and molecular scale interactions occurring in these systems that is still not well understood. In this Special Topic Issue of The Journal of Chemical Physics, we have collected recent representative examples of work that is directed at unraveling the mechanistic details concerning atomic and molecular layer processing, which will provide an important framework from which these fields can continue to develop. These studies range from the application of theory and computation to these systems to the use of powerful experimental probes, such as X-ray synchrotron radiation, probe microscopies, and photoelectron and infrared spectroscopies. The work presented here helps in identifying some of the major challenges and direct future activities in this exciting area of research involving atomic and molecular layer manipulation and fabrication.

  8. Preface: Special Topic on Atomic and Molecular Layer Processing: Deposition, Patterning, and Etching

    Science.gov (United States)

    Engstrom, James R.; Kummel, Andrew C.

    2017-02-01

    Thin film processing technologies that promise atomic and molecular scale control have received increasing interest in the past several years, as traditional methods for fabrication begin to reach their fundamental limits. Many of these technologies involve at their heart phenomena occurring at or near surfaces, including adsorption, gas-surface reactions, diffusion, desorption, and re-organization of near-surface layers. Moreover many of these phenomena involve not just reactions occurring under conditions of local thermodynamic equilibrium but also the action of energetic species including electrons, ions, and hyperthermal neutrals. There is a rich landscape of atomic and molecular scale interactions occurring in these systems that is still not well understood. In this Special Topic Issue of The Journal of Chemical Physics, we have collected recent representative examples of work that is directed at unraveling the mechanistic details concerning atomic and molecular layer processing, which will provide an important framework from which these fields can continue to develop. These studies range from the application of theory and computation to these systems to the use of powerful experimental probes, such as X-ray synchrotron radiation, probe microscopies, and photoelectron and infrared spectroscopies. The work presented here helps in identifying some of the major challenges and direct future activities in this exciting area of research involving atomic and molecular layer manipulation and fabrication.

  9. Electrode-selective deposition/etching processes using an SiF4/H2/Ar plasma chemistry excited by sawtooth tailored voltage waveforms

    Science.gov (United States)

    Wang, J. K.; Johnson, E. V.

    2017-01-01

    We report on the electrode-selective deposition and etching of hydrogenated silicon thin films using a plasma enhanced chemical vapour deposition process excited by sawtooth-shaped tailored voltage waveforms (TVWs). The slope asymmetry of such waveforms leads to a different rate of sheath expansion and contraction at each electrode, and therefore different electron power absorption near each electrode. This effect was employed with an SiF4/H2/Ar plasma chemistry, as the surface processes that result from this gas mixture depend strongly on the local balance between multiple precursors. For a specific gas flow ratio, a deposition rate of 0.82 Å s-1 on one electrode and an etching rate of 1.2 Å s-1 on the other were achieved. Moreover, this deposition/etching balance is controlled by the H2 flow rate, which limits the deposition rate at low flows. When the H2 injection is sufficiently high, the processes are then limited by the dissociation of SiF4, and the relative rate of the surface processes on the two electrodes are reversed, i.e. a higher net deposition rate is observed on the electrode where the fast sheath contraction occurs due to the electronegative character of the plasma.

  10. Investigation of H2/CH4 mixed gas plasma post-etching process for ZnO:B front contacts grown by LP-MOCVD method in silicon-based thin-film solar cells

    Science.gov (United States)

    Wang, Li; Zhang, Xiaodan; Zhao, Ying; Yamada, Takuto; Naito, Yusuke

    2014-10-01

    A new plasma post-etching method, H2/CH4 mixed gas plasma, is introduced to modify ZnO:B films grown by LP-MOCVD technique, successfully relaxing the double trade-offs, i.e., transparency/conductivity trade-off and surface texture/Voc and FF trade-off. To deeply evaluate the post-etching process, optical emission spectroscopy technique is applied to diagnose the plasma condition. Upon different etching power, three distinct possible etching mechanisms are identified by analyzing the evolution of Hα*, Hβ*, CH* emission species in the plasma space. It is demonstrated that Hβ* and CH* species are responsible for the physical etching process and chemical etching process, respectively, from which a new “soft” surface morphology is formed with a combination of micro- and nano-sized texture. Additionally, Hα* species can bond with ZnO and also passivate the grains boundaries, thereby making both the carrier concentration and hall mobility increase. This process is defined as chemical bonding process. Finally, pin-type a-Si:H single-junction solar cells with an optimized device structure is grown on the etched ZnO:B substrate. The corresponding electrical parameters, such as Jsc, Voc and FF, are simultaneously improved compared with the solar cell deposited on as-grown ZnO:B substrate with the same fabrication process. As a consequence, a noteworthy 8.85% conversion-efficiency is achieved with an absorber layer thickness only 160 nm.

  11. Fabrication of combined-scale nano- and microfluidic polymer systems using a multilevel dry etching, electroplating and molding process

    DEFF Research Database (Denmark)

    Tanzi, Simone; Østergaard, Peter Friis; Matteucci, Marco;

    2012-01-01

    Microfabricated single-cell capture and DNA stretching devices have been produced by injection molding. The fabrication scheme employed deep reactive ion etching in a silicon substrate, electroplating in nickel and molding in cyclic olefin polymer. This work proposes technical solutions to fabric......Microfabricated single-cell capture and DNA stretching devices have been produced by injection molding. The fabrication scheme employed deep reactive ion etching in a silicon substrate, electroplating in nickel and molding in cyclic olefin polymer. This work proposes technical solutions...

  12. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

    Energy Technology Data Exchange (ETDEWEB)

    Lavrova, Olga [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; Balakrishnan, Ganesh [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

    2017-02-24

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

  13. Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)Etching-Monitoring Using Quadrupole Mass Spectrometry

    Science.gov (United States)

    Takahashi, Satoshi; Horie, Tomoyuki; Shirayama, Yuya; Yokosuka, Shuntaro; Kashimura, Kenta; Hayashi, Akihiro; Iwase, Chikatsu; Shimbori, Shun'ichiro; Tokumoto, Hiroshi; Naitoh, Yasuhisa; Shimizu, Tetsuo

    Quadrupole mass spectrometry (QMS) has been applied to monitor the etching processes in a localized plasma etching system. An inward plasma was employed for etching in which the etching gas was discharged in the narrow gap between the etched sample and the entrance of an evacuating capillary tube. As the etching products are immediately evacuated through the capillary, a QMS system equipped at the capillary exit is able to analyze the products without any loss in concentration via diffusion into the chamber. Two kinds of samples, thermally grown SiO2 on Si and spin-coated polyimide film on Si, were etched, and the chemical species in the evacuated etching gas were analyzed with QMS, which enables monitoring of the composition of the surface being etched. Samples of thermal SiO2 were etched with CF4 plasma. The peak height of the SiF3+ signal during the SiO2 etching was lower than that observed during etching of the silicon substrate, leading to endpoint detection. The endpoint detection of the polyimide film etching was conducted using two etching gases: pure O2 and pure CF4. When O2 was used, the endpoint was detected by the decrease of the mass peak attributed to CO. When CF4 was employed, the plasma was able to etch both the polyimide film and Si substrate. Then the endpoint was detected by the increase of the mass peak of SiF3+ produced by the etching of the Si substrate.

  14. A Multi-Scale Study on Silicon-Oxide Etching Processes in C4F8/Ar Plasmas

    Science.gov (United States)

    Sui, Jiaxing; Zhang, Saiqian; Liu, Zeng; Yan, Jun; Dai, Zhongling

    2016-06-01

    A multi-scale numerical method coupled with the reactor, sheath and trench model is constructed to simulate dry etching of SiO2 in inductively coupled C4F8 plasmas. Firstly, ion and neutral particle densities in the reactor are decided using the CFD-ACE+ commercial software. Then, the ion energy and angular distributions (IEDs and IADs) are obtained in the sheath model with the sheath boundary conditions provided with CFD-ACE+. Finally, the trench profile evolution is simulated in the trench model. What we principally focus on is the effects of the discharge parameters on the etching results. It is found that the discharge parameters, including discharge pressure, radio-frequency (rf) power, gas mixture ratios, bias voltage and frequency, have synergistic effects on IEDs and IADs on the etched material surface, thus further affecting the trench profiles evolution. supported by National Natural Science Foundation of China (No. 11375040) and the Important National Science & Technology Specific Project of China (No. 2011ZX02403-002)

  15. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  16. A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

    NARCIS (Netherlands)

    Roozeboom, F.; Kniknie, B.J.; Lankhorst, A.M.; Winands, G.; Knaapen, R.; Smets, M.; Poodt, P.W.G.; Dingemans, G.; Keuning, W.; Kessels, W.M.M.

    2012-01-01

    Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In

  17. Black Germanium fabricated by reactive ion etching

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  18. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity.

    Science.gov (United States)

    Zeniou, A; Ellinas, K; Olziersky, A; Gogolides, E

    2014-01-24

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  19. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

    Science.gov (United States)

    Zeniou, A.; Ellinas, K.; Olziersky, A.; Gogolides, E.

    2014-01-01

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min-1 using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  20. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  1. Solar collectors. Technical progress report No. 1, September 5, 1978-March 5, 1979. [Listing of glazings, housing materials, acrylic coatings, etching processes and AR coatings

    Energy Technology Data Exchange (ETDEWEB)

    Baum, B.; Gage, M.

    1979-04-27

    A broad information search was carried out in four areas: glazings, housing materials, acrylic coatings, etching processes and AR coatings. An extensive list of all (known) US transparent polymers was developed as well as tables of plastic, ceramic and metallic materials that could conceivably function as a housing. In addition, a compilation was made of commercially available solvent and water-base acrylic coatings for use as a uv protective coating for the glazing. Eighteen transparent polymers were chosen as possible glazings and twelve materials (plastic and wood) as possible housings and exposed in the Weather-Ometer as tensile bars and for the glazings as disks for optical transmission. These same materials were also exposed on our roof to monitor soiling. A variety of solvent and water-base acrylics were selected as protective coatings and ordered. Two commercial films - Tedlar 20 and Halar 500 - with strong absorption in the uv and two commercial films containing uv absorbers - Tedlar UT and Korad 201R - were laminated by several different processes to four promising glazing materials: polyvinyl fluoride (Tedlar), polymethyl methacrylate (Plexiglass), crosslinked ethylene/vinyl acetate and thermoplastic polyester (Llumar). A variety of etching processes were briefly explored and AR coating studies started on the above four glazing films.

  2. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  3. Hf-based high-k materials for Si nanocrystal floating gate memories

    Directory of Open Access Journals (Sweden)

    Sahu Bhabani

    2011-01-01

    Full Text Available Abstract Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices.

  4. Analytical model of plasma-chemical etching in planar reactor

    Science.gov (United States)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.; Kireev, V. Yu; Vasileva, O. V.

    2016-09-01

    The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.

  5. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2014-07-23

    Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

  6. Hf-based high-k dielectrics process development, performance characterization, and reliability

    CERN Document Server

    Kim, Young-Hee

    2006-01-01

    In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The o

  7. Etching Processes of Polytetrafluoroethylene Surfaces Exposed to He and He-O2 Atmospheric Post-discharges

    CERN Document Server

    Hubert, J; Vandencasteele, Nicolas; Desbief, Simon; Lazzaroni, Roberto; Reniers, F

    2016-01-01

    A comparative study of polytetrafluoroethylene (PTFE) surfaces treated by the post-discharge of He and He-O2 plasmas at atmospheric pressure is presented. The characterization of treated PTFE surfaces and the species involved in the surface modification are related. In pure He plasmas, no significant change of the surface has been observed by X-ray photoelectron spectroscopy (XPS), dynamic water contact angles (dWCA) and atomic force microscopy (AFM), in spite of important mass losses recorded. According to these observations, a layer-by-layer physical etching without any preferential orientation is proposed, where the highly energetic helium metastables are the main species responsible for the scission of --(CF2)n-- chains. In He--O 2 plasmas, as the density of helium metastables decreases as a function of the oxygen flow rate, the treatment leads to fewer species ejected from the PTFE surfaces (in agreement with mass loss measurements and the detection of fluorinated species onto aluminum foil). However, th...

  8. Preparation of multifunctional Al-Mg alloy surface with hierarchical micro/nanostructures by selective chemical etching processes

    Science.gov (United States)

    Shi, Tian; Kong, Jianyi; Wang, Xingdong; Li, Xuewu

    2016-12-01

    A superamphiphobic aluminum magnesium alloy surface with enhanced anticorrosion behavior has been prepared in this work via a simple and low-cost method. By successively polishing, etching and boiling treatments, the multifunctional hierarchical binary structures composed of the labyrinth-like concave-convex microstructures and twisty nanoflakes have been prepared. Results indicate that a superhydrophobic contact angle of 160.5° and superoleophobic contact angle larger than 150° as well as low adhesive property to liquids are achieved after such structures being modified with fluoroalkyl-silane. Furthermore, the anticorrosion behaviors in seawater of as-prepared samples are characterized by electrochemical tests including the impedance spectroscopies, equivalent circuits fittings and polarization curves. It is found that the hierarchical micro/nanostructures accompanying with the modified coating are proved to possess the maximal coating coverage rate of 90.0% larger than microstructures of 85.9%, nanostructures of 83.8% and bare polished surface of 67.1% suggesting the optimal anticorrosion. Finally, a great potential application in concentrators for surface-enhanced Raman scattering (SERS) analysis of toxic and pollutive ions on the superamphiphobic surface is also confirmed. This work has wider significance in extending further applications of alloys in engineering and environmental detecting fields.

  9. TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

    Science.gov (United States)

    Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

    2009-03-01

    An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The

  10. Catalyst-referred etching of silicon

    Directory of Open Access Journals (Sweden)

    Hideyuki Hara et al

    2007-01-01

    Full Text Available A Si wafer and polysilicon deposited on a Si wafer were planarized using catalyst-referred etching (CARE. Two apparatuses were produced for local etching and for planarization. The local etching apparatus was used to planarize polysilicon and the planarization apparatus was used to planarize Si wafers. Platinum and hydrofluoric acid were used as the catalytic plate and the source of reactive species, respectively. The processed surfaces were observed by optical interferometry, atomic force microscopy (AFM and scanning electron microscopy (SEM. The results indicate that the CARE-processed surface is flat and undamaged.

  11. An integrated study of uranyl mineral dissolution processes. Etch pit formation, effects of cations in solution, and secondary precipitation

    Energy Technology Data Exchange (ETDEWEB)

    Schindler, M. [Laurentian Univ., Sudbury, ON (Canada). Dept. of Earth Sciences; Hawthorne, F.C. [Manitoba Univ., Winnipeg, MB (Canada). Dept. of Geological Sciences; Mandaliev, P. [Eidgenoessische Technische Hochschule (ETH), Zurich (Switzerland). Dept. of Environmental Sciences; Burns, P.C.; Maurice, P.A. [Notre Dame Univ., IN (United States). Dept. of Civil Engineering and Geological Sciences

    2011-07-01

    Understanding the mechanism(s) of uranium-mineral dissolution is crucial for predictive modeling of U mobility in the subsurface. In order to understand how pH and type of cation in solution may affect dissolution, experiments were performed on mainly single crystals of curite, Pb{sup 2+}{sub 3}(H{sub 2}O){sub 2}[(UO{sub 2}){sub 4}O{sub 4}(OH){sub 3}]{sub 2}, becquerelite, Ca(H{sub 2}O){sub 8}[(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}], billietite, Ba(H{sub 2}O){sub 7}[(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}], fourmarierite Pb{sup 2+}{sub 1-x}(H{sub 2}O){sub 4}[(UO{sub 2}){sub 4}O{sub 3-2x}(OH){sub 4+2x}] (x= 0.00-0.50), uranophane, Ca(H{sub 2}O){sub 5}[(UO{sub 2})(SiO{sub 3}OH)]{sub 2}, zippeite, K{sub 3}(H{sub 2}O){sub 3}[(UO{sub 2}){sub 4}(SO{sub 4}){sub 2}O{sub 3}(OH)], and Na-substituted metaschoepite, Na{sub 1-x}[(UO{sub 2}){sub 4}O{sub 2-x}(OH){sub 5+x}] (H{sub 2}O){sub n}. Solutions included: deionized water; aqueous HCl solutions at pH 3.5 and 2; 0.5 mol L{sup -1} Pb(II)-, Ba-, Sr-, Ca-, Mg-, HCl solutions at pH 2; 1.0 mol L{sup -1} Na- and K-HCl solutions at pH 2; and a 0.1 mol L{sup -1} Na{sub 2}CO{sub 3} solution at pH 10.5. Uranyl mineral basal surface microtopography, micromorphology, and composition were examined prior to, and after dissolution experiments on micrometer scale specimens using atomic force microscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. Evolution of etch pit depth at different pH values and experimental durations can be explained using a stepwave dissolution model. Effects of the cation in solution on etch pit symmetry and morphology can be explained using an adsorption model involving specific surface sites. Surface precipitation of the following phases was observed: (a) a highly-hydrated uranyl-hydroxy-hydrate in ultrapure water (on all minerals), (b) a Na-uranyl-hydroxy-hydrate in Na{sub 2}CO{sub 3} solution of pH 10.5 (on uranyl-hydroxy-hydrate minerals), (c) a Na-uranyl-carbonate on zippeite, (d) Ba- and

  12. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  13. Surface engineering of SiC via sublimation etching

    Science.gov (United States)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  14. The role of plasma-surface interactions in process chemistry: Mechanistic studies of a-carbon nitride deposition and sulfur fluoride/oxygen etching of silicon

    Science.gov (United States)

    Stillahn, Joshua M.

    The molecular level chemistry of a-CNx deposition in plasma discharges was studied with emphasis on the use of CH 3CN and BrCN as single source precursors for these films. Characterization of the global deposition behavior in these systems indicates that the resulting films are relatively smooth and contain significant levels of N-content, with N/C > 0.3. Notably, films obtained from BrCN plasmas are observed to delaminate upon their exposure to atmosphere, and preliminary investigation of this behavior is presented. Detailed chemical investigation of the deposition process focuses primarily on the contributions of CN radicals, which were characterized from their origin in the gas phase to their reaction at the a-CNx film surface. Laser-induced fluorescence studies suggest that CN is formed through electron impact dissociation of the precursor species and that this breakdown process produces CN with high internal energies, having rotational and vibrational temperatures on the order of 1000 K and 5000 K, respectively. Measurement of CN surface reactivity coefficients in CH3CN plasmas show that CN reacts with a probability of ˜94%, irrespective of the deposition conditions; this information, combined with gas phase and film characterization data, leads to the conclusion that CN internal energies exert a strong influence on their surface reactivity and that these surface reactions favor their incorporation into the a-CN x film. Moreover, this correlation is shown to hold for several other plasma radicals studied in our lab, suggesting the potential for developing a general model for predicting surface interactions of activated gas phase species. This dissertation also presents results from studies of SF6/O 2 etching of Si. Addition of O2 to the feed gas leads to the generation of SO2, among other species, and gas phase characterization data suggest that SO2 may act as a sink for atomic S, preventing the reformation of SOxFy (y > 0) and thus promoting generation of

  15. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  16. Application of an RF Biased Langmuir Probe to Etch Reactor Chamber Matching, Fault Detection and Process Control

    Science.gov (United States)

    Keil, Douglas; Booth, Jean-Paul; Benjamin, Neil; Thorgrimsson, Chris; Brooks, Mitchell; Nagai, Mikio; Albarede, Luc; Kim, Jung

    2008-10-01

    Semiconductor device manufacturing typically occurs in an environment of both increasing equipment costs and per unit sale price shrinkage. Profitability in such a conflicted economic environment depends critically on yield, throughput and cost-of-ownership. This has resulted in increasing interest in improved fault detection, process diagnosis, and advanced process control. Achieving advances in these areas requires an integrated understanding of the basic physical principles driving the processes of interest and the realities of commercial manufacturing. Following this trend, this work examines the usefulness of an RF-biased planar Langmuir probe^1. This method delivers precise real-time (10 Hz) measurements of ion flux and tail weighted electron temperature. However, it is also mechanically non-intrusive, reliable and insensitive to contamination and deposition on the probe. Since the measured parameters are closely related to physical processes occurring at the wafer-plasma interface, significant improvements in process control, chamber matching and fault detection are achieved. Examples illustrating the improvements possible will be given. ^1J.P. Booth, N. St. J. Braithwaite, A. Goodyear and P. Barroy, Rev.Sci.Inst., Vol.71, No.7, July 2000, pgs. 2722-2727.

  17. Investigation of etching and deposition processes of Cl{sub 2}/O{sub 2}/Ar inductively coupled plasmas on silicon by means of plasma-surface simulations and experiments

    Energy Technology Data Exchange (ETDEWEB)

    Tinck, S; Bogaerts, A [Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp (Belgium); Boullart, W, E-mail: stefan.tinck@ua.ac.b [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2009-05-07

    In this paper, a simulation method is described to predict the etching behaviour of Cl{sub 2}/O{sub 2}/Ar inductively coupled plasmas on a Si substrate, as used in shallow trench isolation for the production of electronic devices. The hybrid plasma equipment model (HPEM) developed by Kushner et al is applied to calculate the plasma characteristics in the reactor chamber and two additional Monte Carlo simulations are performed to predict the fluxes, angles and energy of the plasma species bombarding the Si substrate, as well as the resulting surface processes such as etching and deposition. The simulations are performed for a wide variety of operating conditions such as gas composition, chamber pressure, power deposition and substrate bias. It is predicted by the simulations that when the fraction of oxygen in the gas mixture is too high, the oxidation of the Si substrate is superior to the etching of Si by chlorine species, resulting in an etch rate close to zero as is also observed in the experiments.

  18. Polymerization monitoring in plasma etching systems

    Science.gov (United States)

    Kim, Jinsoo

    1999-11-01

    In plasma etching processes, the polymers used to enhance etch anisotropy and selectivity also deposit on various parts of the reaction chamber. This polymerization on reactor surface not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. This thesis explores the development of a direct in-situ polymerization monitoring sensor to minimize the drifts in plasma etching processes. In addition, polymerization dependencies on basic processing parameters and polymerization effects on etching characteristics have been explored for the first time using a direct in-situ sensor. The polymer buildup process is a strong function of parameters such as power, base pressure, and flow rate, and is also dependent on the reactor materials used, temperature, and the hydrogen/oxygen concentrations present. Experiments performed in an Applied Materials 8300 plasma etcher show a significant increase in polymerization with increased pressure and flow rates and a decrease as a function of power. These experiments provide insight into how the chamber state changes under the different processing recipes used for etching specific material layers and also suggest how the chamber seasoning process can best be carried out. The reactor surface, which serves as both a source and a sink for reactive gas species, not only strongly affects the concentration of reactants in the plasma discharge, eventually changing the etching characteristics, but also can produce particulates which lower yield. The etch rate and selectivity variations for specific silicon dioxide and silicon nitride etching recipes have been explored as a function of the polymer thickness on the reactor walls. The etch rates of nitride and polysilicon decrease dramatically with polymer thickness up to a thickness of 60nm, while the oxide etch rate remains virtually constant due to the polymerization

  19. Extreme ultraviolet lithography mask etch study and overview

    Science.gov (United States)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  20. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  1. Quasi-stationary heterogeneous states of electrolyte at electrodeposition and etching process in a gradient magnetic field of a magnetized ferromagnetic ball

    Energy Technology Data Exchange (ETDEWEB)

    Gorobets, O.Yu. [National Technical University of Ukraine ' KPI' , Prospect Peremogy, 37, 03056 Kiev (Ukraine); Gorobets, Yu.I., E-mail: Gorobets@imag.kiev.ua [Institute for Magnetism, Prospect Vernadskogo, 36-b, 03142 Kiev (Ukraine); Bondar, I.A., E-mail: ivanna_bondar@ukr.net [National Technical University of Ukraine ' KPI' , Prospect Peremogy, 37, 03056 Kiev (Ukraine); Legenkiy, Yu.A., E-mail: legen_yu@ukr.net [Donetsk National University of Ukraine, Universitetskaya Street 24, 340055 Donetsk (Ukraine)

    2013-03-15

    We report the results of the experimental study of the shape of the interface separating areas with different magnetic susceptibilities of paramagnetic etching products formed in an inhomogeneous magnetic field in the vicinity of a magnetized steel ball during its corrosion. The theoretical model describing the shape and size of this interface as well as the distribution of the paramagnetic etching product concentration inside this area is proposed. The shape of the interface was calculated taking into account the pressure balance. - Highlights: Black-Right-Pointing-Pointer Phase separation of an electrolyte is reported in an inhomogeneous magnetic field. Black-Right-Pointing-Pointer The shape of the interface was calculated taking into account the pressure balance. Black-Right-Pointing-Pointer The etching products represent the nano-sized clusters inside the paramagnetic phases.

  2. Bulk molybdenum field emitters by inductively coupled plasma etching.

    Science.gov (United States)

    Zhu, Ningli; Cole, Matthew T; Milne, William I; Chen, Jing

    2016-12-07

    In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.

  3. Electrical field-induced faceting of etched features using plasma etching of fused silica

    Science.gov (United States)

    Huff, M.; Pedersen, M.

    2017-07-01

    This paper reports a previously unreported anomaly that occurs when attempting to perform deep, highly anisotropic etches into fused silica using an Inductively-Coupled Plasma (ICP) etch process. Specifically, it was observed that the top portion of the etched features exhibited a substantially different angle compared to the vertical sidewalls that would be expected in a typical highly anisotropic etch process. This anomaly has been termed as "faceting." A possible explanation of the mechanism that causes this effect and a method to eradicate it has been developed. Additionally, the method to eliminate the faceting is demonstrated. It is theorized that this faceting is a result of the interaction of the electro-potential electrical fields that surround the patterned nickel layers used as a hard mask and the electrical fields directing the high-energy ions from the plasma to the substrate surface. Based on this theory, an equation for calculating the minimum hard mask thickness required for a desired etch depth into fused silica to avoid faceting was derived. As validation, test samples were fabricated employing hard masks of thicknesses calculated based on the derived equation, and it was found that no faceting was observed on these samples, thereby demonstrating that the solution performed as predicted. Deep highly anisotropic etching of fused silica, as well as other forms of silicon dioxide, including crystalline quartz, using plasma etching, has an important application in the fabrication of several MEMS, NEMS, microelectronic, and photonic devices. Therefore, a method to eliminate faceting is an important development for the accurate control of the dimensions of deep and anisotropic etched features of these devices using ICP etch technology.

  4. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gosalvez, M.A.; Foster, A.S.; Nieminen, R.M

    2002-12-30

    Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches a maximum. The dependence of the anisotropy of the etching process on coverage, including the dependence of the fastest-etched plane orientation, is implicitly contained in the model and predictions of convex corner under-etching structures are made. We show that the whole etching process is controlled by only a few surface configurations involving a particular type of next-nearest neighbours. The relative value of the removal probabilities of these confitions determines the balance in the occurrence of step propagation and etch pitting for all surface orientations.

  5. Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation

    NARCIS (Netherlands)

    Tang, J.; Gruber, D.; Schelen, J.B.J.; Funke, H.J.; Beenakker, C.I.M.

    2012-01-01

    Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is encountere

  6. Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation

    NARCIS (Netherlands)

    Tang, J.; Gruber, D.; Schelen, J.B.J.; Funke, H.J.; Beenakker, C.I.M.

    2012-01-01

    Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is

  7. Etching with atomic precision by using low electron temperature plasma

    Science.gov (United States)

    Dorf, L.; Wang, J.-C.; Rauf, S.; Monroy, G. A.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2017-07-01

    There has been a steady increase in sub-nm precision requirement for many critical plasma etching processes in the semiconductor industry. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in conventional radio-frequency (RF) plasma processing systems, even during layer-by-layer or ‘atomic layer’ etch. To meet these increasingly stringent requirements, it is necessary to have an accurate control over ion energy and ion/radical composition during plasma processing. In this work, a new plasma etch system designed to facilitate atomic precision plasma processing is presented. An electron sheet beam parallel to the substrate surface is used to produce a plasma in this system. This plasma has a significantly lower electron temperature T e ~ 0.3 eV and ion energy E i  plasmas. Electron beam plasmas also have a higher ion-to-radical ratio compared to RF plasmas, so this plasma etch system employs an independent radical source for accurate control over relative ion and radical concentrations. A low frequency RF bias capability that allows control of ion energy in the 2-50 eV range is another important component of this plasma etch system. The results of etching of a variety of materials and structures in this low-electron temperature plasma system are presented in this study: (1) layer-by-layer etching of p-Si at E i ~ 25-50 eV using electrical and gas cycling is demonstrated; (2) continuous etching of epi-grown µ-Si in Cl2-based plasmas is performed, showing that surface damage can be minimized by keeping E i  etching at low E i.

  8. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik;

    2014-01-01

    in a liquid reacts with material from the substrate is the ability to fine‐tune the etch process. In wet processing the removal of material generally occurs indiscriminately of direction in the substrate ‐ hence in all directions. This puts a strong limitation on what may be achieved in terms of designs...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  9. A paradigm shift in patterning foundation from frequency multiplication to edge-placement accuracy: a novel processing solution by selective etching and alternating-material self-aligned multiple patterning

    Science.gov (United States)

    Han, Ting; Liu, Hongyi; Chen, Yijian

    2016-03-01

    Overlay errors, cut/block and line/space critical-dimension (CD) variations are the major sources of the edge-placement errors (EPE) in the cut/block patterning processes of complementary lithography when IC technology is scaled down to sub-10nm half pitch (HP). In this paper, we propose and discuss a modular technology to reduce the EPE effect by combining selective etching and alternating-material (dual-material) self-aligned multiple patterning (altSAMP) processes. Preliminary results of altSAMP process development and material screening experiment are reported and possible material candidates are suggested. A geometrical cut-process yield model considering the joint effect of overlay errors, cut-hole and line CD variations is developed to analyze its patterning performance. In addition to the contributions from the above three process variations, the impacts of key control parameters (such as cut-hole overhang and etching selectivity) on the patterning yield are examined. It is shown that the optimized altSAMP patterning process significantly improves the patterning yield compared with conventional SAMP processes, especially when the half pitch of device patterns is driven down to 7 nm and below.

  10. Etching process optimization using NH{sub 4}Cl aqueous solution to texture ZnO:Al films for efficient light trapping in flexible thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S., E-mail: susanamaria.fernandez@ciemat.es [CIEMAT, Departamento de Energias Renovables, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica, Universidad de Alcala, Departamento de Electronica, Alcala de Henares, Madrid (Spain); Gandia, J.J. [CIEMAT, Departamento de Energias Renovables, Madrid (Spain)

    2012-04-02

    0.5 {mu}m-thick aluminum-doped zinc oxide (ZnO:Al) films were deposited at 100 Degree-Sign C on polyethylene terephthalate substrates by Radio Frequency magnetron sputtering. The as-deposited films were compact and dense, showing grain sizes of 32.0 {+-} 6.4 nm and resistivities of (8.5 {+-} 0.7) Multiplication-Sign 10{sup -4} {Omega} cm. The average transmittance in the visible wavelength range of the structure ZnO:Al/PET was around 77%. The capability of a novel two-step chemical etching using diluted NH{sub 4}Cl aqueous solution to achieve efficient textured surfaces for light trapping was analyzed. The results indicated that both the aqueous solution and the etching method resulted appropriated to obtain etched surfaces with a surface roughness of 32 {+-} 5 nm, haze factors at 500 nm of 9% and light scattering at angles up to 50 Degree-Sign . To validate all these results, a commercially ITO coated PET substrate was used for comparison.

  11. Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 2: SF6 / O2 Modeling of the chemical processes in the plasma of gaseous mixtures used in the etching of silicon. Part 2: SF6 / O2

    Directory of Open Access Journals (Sweden)

    G. F. Bauerfeldt

    1998-02-01

    Full Text Available In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes and the effect of the parameters' uncertainties were determined. The model was compared with experimental data for the plasma etching of silicon and with the calculated results for the CF4 / O2 system. In both systems the main etching agent is the fluorine atom and the concentration of the major species depends on the composition of the mixture. The etching rate is greater for SF6 / O2.

  12. Silicon nanowire photodetectors made by metal-assisted chemical etching

    Science.gov (United States)

    Xu, Ying; Ni, Chuan; Sarangan, Andrew

    2016-09-01

    Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

  13. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    Directory of Open Access Journals (Sweden)

    Ajay Kumar

    2014-02-01

    Full Text Available This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that the light transmission through etched fiber at 1550 nm wavelength optical source becomes highly temperature sensitive, compared to the temperature insensitive behavior observed in un-etched fiber for the range on 30ºC to 100ºC at 1550 nm. The sensor response under temperature cycling is repeatable and, proposed to be useful for low frequency analogue signal transmission over optical fiber by means of inline thermal modulation approach.

  14. Review of micromachining of ceramics by etching

    Institute of Scientific and Technical Information of China (English)

    H.T.TING; K.A.ABOU-EL-HOSSEIN; H.B.CHUA

    2009-01-01

    In the last two decades, there has been an enormous surge in interest in ceramic materials and, as a result, there have been significant advances in their development and applications. Their inherent properties, such as capability of operating at temperatures far above metals, high level of hardness and toughness, low coefficient of thermal expansion and high thermal conductivity rendered ceramics to be one of the leading engineering materials. Many research works have been conducted in the past few years on machining of advanced ceramics using different processing methods in order to obtain a better surface roughness, higher material removal rate and improved tool life. Micromachining using chemical etching is one of those methods that do not involve the problem of tool life and direct tool-work piece contact. However, only a few research works have been done on micromachining of ceramics using chemical etching. Hence, study of chemical machining of advanced ceramics is still needed as the process has found wide application in the industry because of its relative low operating costs. In this work, we summarize the recent progresses in machining of different types of advanced ceramics, material processing methods such as wet etching and dry etching, and finally the prospects for control of material removal rate and surface quality in the process of ceramic micromachining.

  15. A novel sacrificial-layer process based on anodic bonding and its application in an accelerometer

    Directory of Open Access Journals (Sweden)

    Lingyun Wang

    2015-04-01

    Full Text Available It is found in our experiments that the depletion layer of anodic bonding is etched faster than the bulk glass (Pyrex 7740 in hydrofluoric acid (HF. Based on this interesting phenomenon, a novel process of a sacrificial layer is proposed in this paper. In order to deeply understand and investigate the rules concerning the influence of bonding parameters on this effect, firstly the width of the depletion layer under different bonding voltages and temperatures and the selection ratio of etching are revealed. To validate the feasibility of the method, a micro-machined accelerometer is designed and fabricated. The test results of resonant frequency and sensitivity of the fabricated accelerometer are 3254.5 Hz and 829.85–844.93 mV/g, respectively. This was further evidence that the depletion layer could be used as a sacrificial layer and the removable structure could be successfully released by fast etching this layer. The important feature of this method is that only one mask is needed in the whole process and therefore it could greatly simplify the fabrication process of the device.

  16. A novel sacrificial-layer process based on anodic bonding and its application in an accelerometer

    Science.gov (United States)

    Wang, Lingyun; He, Yong; Zhan, Zhan; Yu, Lingke; Wang, Huan; Chen, Daner

    2015-04-01

    It is found in our experiments that the depletion layer of anodic bonding is etched faster than the bulk glass (Pyrex 7740) in hydrofluoric acid (HF). Based on this interesting phenomenon, a novel process of a sacrificial layer is proposed in this paper. In order to deeply understand and investigate the rules concerning the influence of bonding parameters on this effect, firstly the width of the depletion layer under different bonding voltages and temperatures and the selection ratio of etching are revealed. To validate the feasibility of the method, a micro-machined accelerometer is designed and fabricated. The test results of resonant frequency and sensitivity of the fabricated accelerometer are 3254.5 Hz and 829.85-844.93 mV/g, respectively. This was further evidence that the depletion layer could be used as a sacrificial layer and the removable structure could be successfully released by fast etching this layer. The important feature of this method is that only one mask is needed in the whole process and therefore it could greatly simplify the fabrication process of the device.

  17. Anisotropy of synthetic diamond in catalytic etching using iron powder

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junsha [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan); Wan, Long, E-mail: wanlong1799@163.com [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Chen, Jing [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Yan, Jiwang [Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan)

    2015-08-15

    Highlights: • Synthetic diamond crystallites were etched using iron without requiring hydrogen. • The effect of temperature on the etching behaviour was demonstrated. • The anisotropy of etching on different crystal planes was investigated. • The extent of etching on diamond surface was examined quantitatively. • A schematic model for diamond etching by iron is being proposed. - Abstract: This paper demonstrated a novel technique for catalytic etching of synthetic diamond crystallites using iron (Fe) powder without flowing gas. The effect of temperature on the etching behaviour on different crystal planes of diamond was investigated. The surface morphology and surface roughness of the processed diamond were examined by scanning electron microscope (SEM) and laser-probe surface profiling. In addition, the material composition of the Fe-treated diamond was characterized using micro-Raman spectroscopy and the distribution of chemical elements and structural changes on Fe-loaded diamond surfaces were analyzed by energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD), respectively. Results showed that at the same temperature the {1 0 0} plane was etched faster than the {1 1 1} plane, and that the etching rate of both {1 0 0} and {1 1 1} plane increased with temperature. The etch pits on {1 0 0} plane were reversed pyramid with flat {1 1 1} walls, while the etch holes on {1 1 1} plane were characterized with flat bottom. It was also demonstrated that graphitization of diamond and subsequent carbon diffusion in molten iron were two main factors resulting in the removal of carbon from the diamond surface.

  18. Realization of Ultraflat Plastic Film Using Dressed-Photon-Phonon-Assisted Selective Etching of Nanoscale Structures

    Directory of Open Access Journals (Sweden)

    Takashi Yatsui

    2015-01-01

    Full Text Available We compared dressed-photon-phonon (DPP etching to conventional photochemical etching and, using a numerical analysis of topographic images of the resultant etched polymethyl methacrylate (PMMA substrate, we determined that the DPP etching resulted in the selective etching of smaller scale structures in comparison with the conventional photochemical etching. We investigated the wavelength dependence of the PMMA substrate etching using an O2 gas. As the dissociation energy of O2 is 5.12 eV, we applied a continuous-wave (CW He-Cd laser (λ= 325 nm, 3.81 eV for the DPP etching and a 5th-harmonic Nd:YAG laser (λ= 213 nm, 5.82 eV for the conventional photochemical etching. From the obtained atomic force microscope images, we confirmed a reduction in surface roughness, Ra, in both cases. However, based on calculations involving the standard deviation of the height difference function, we confirmed that the conventional photochemical etching method etched the larger scale structures only, while the DPP etching process selectively etched the smaller scale features.

  19. Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes

    Science.gov (United States)

    Liu, Hongyi; Han, Ting; Zhou, Jun; Chen, Yijian

    2016-03-01

    To overcome the prohibitive barriers of edge-placement errors (EPE) in the cut/block/via step of complementary lithography, we propose a modular patterning approach by combining layout stitching, selective etching, and alternating-material self-aligned multiple patterning (altSAMP) processes. In this patterning approach, altSAMP is used to create line arrays with two materials alternatively which allow a highly selective etching process to remove one material without attacking the other, therefore more significant EPE effect can be tolerated in line-cutting step. With no need of connecting vias, the stitching process can form 2-D features by directly stitching two components of patterns together to create 2-D design freedom as well as multiple-CD/pitch capability. By adopting this novel approach, we can potentially achieve higher processing yield and more 2-D design freedom for continuous IC scaling down to 5 nm. We developed layout decomposition and synthesis algorithms for critical layers, and the fin/gate/metal layer from NSCU open cell library is used to test the proposed algorithms.

  20. Highly selective dry etching of polystyrene-poly(methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas

    Science.gov (United States)

    Miyazoe, Hiroyuki; Jagtiani, Ashish V.; Tsai, Hsin-Yu; Engelmann, Sebastian U.; Joseph, Eric A.

    2017-05-01

    We propose a very selective PMMA removal method from poly(styrene-block-methyl methacrylate) (PS-b-PMMA) copolymer using gas pulsing cyclic etching. Flow ratio of hydrogen (H2) added to carbon monoxide (CO) plasma was periodically changed to control etch and deposition processes on PS. By controlling the process time of each etch and deposition step, full PMMA removal including etching of the neutral layer was demonstrated at 28 nm pitch, while PS thickness remained intact. This is more than 10 times higher etch selectivity than conventional continuous plasma etch processes using standard oxygen (O2), CO-H2 and CO-O2-based chemistries.

  1. High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

    Directory of Open Access Journals (Sweden)

    Chia-Pin Yeh

    2016-08-01

    Full Text Available Reactive ion etching (RIE technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.

  2. Reactive ion etching of quartz and Pyrex for microelectronic applications

    Science.gov (United States)

    Zeze, D. A.; Forrest, R. D.; Carey, J. D.; Cox, D. C.; Robertson, I. D.; Weiss, B. L.; Silva, S. R. P.

    2002-10-01

    The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (μw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

  3. Deep and vertical silicon bulk micromachining using metal assisted chemical etching

    Science.gov (United States)

    Zahedinejad, Mohammad; Delaram Farimani, Saeed; Khaje, Mahdi; Mehrara, Hamed; Erfanian, Alireza; Zeinali, Firooz

    2013-05-01

    In this paper, a newfound and simple silicon bulk micromachining process based on metal-assisted chemical etching (MaCE) is proposed which opens a whole new field of research in MEMS technology. This method is anisotropic and by controlling the etching parameters, deep vertical etching, relative to substrate surface, can be achieved in micrometer size for oriented Si wafer. By utilizing gold as a catalyst and a photoresist layer as the single mask layer for etching, 60 µm deep gyroscope micromachined structures have been fabricated for 2 µm features. The results indicate that MaCE could be the only wet etching method comparable to conventional dry etching recipes in terms of achievable etch rate, aspect ratio, verticality and side wall roughness. It also does not need a vacuum chamber and the other costly instruments associated with dry etching techniques.

  4. Studies of CR-39 etch rates

    CERN Document Server

    Rana, M A

    2002-01-01

    A series of chemical etching experiments have been carried out on CR-39 detectors irradiated with fission fragments of sup 2 sup 5 sup 2 Cf to study the bulk and track etching characteristics. Experimental data has been analyzed to find out important track etch parameters. Both bulk and track etch rates are found to follow the Arrhenius equation which gives the variation of etch rate with temperature for a specific set of etching conditions. Activation energies for bulk and track etching have been determined by fitting Arrhenius equation to the experimental data. Other track etch parameters, e.g. critical angle of etching and track registration efficiency have also been determined using experimental data. Track etch parameters depend on properties of incident ion and etching conditions. Results describing the dependence of track etch parameters on etching conditions have been presented. These results are useful in the interpretation of track data.

  5. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  6. Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

    Science.gov (United States)

    Naddaf, M.

    2017-01-01

    Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

  7. Development of deep silicon plasma etching for 3D integration technology

    Directory of Open Access Journals (Sweden)

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  8. Cryogenic rf test of the first plasma etched SRF cavity

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Im, D; Phillips, L; Vušković, L

    2016-01-01

    Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity is then plasma processed. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  9. Low-temperature and damage-free transition metal and magnetic material etching using a new metallic complex reaction

    Science.gov (United States)

    Nozawa, Toshihisa; Miyama, Ryo; Kubota, Shinji; Moyama, Kazuki; Kubota, Tomihiro; Samukawa, Seiji

    2015-03-01

    A neutral beam etching process has been developed that achieves damage- free (chemically and physically) etching. Recently, it was found that transition metals could be etched using neutral beam etching through metallic complex reactions. In this process, a neutral beam is extracted from a plasma generation region into a reaction chamber. Complex reactant gases are injected into a reaction chamber which is screened from the plasma during neutral beam etching. In this paper, etching of Pt and CoFeB, candidate materials for MRAM structures by a neutral beam system is described. It was found that etch rate enhancement of Pt/CoFeB surfaces resulted from their exposure to a neutral beam from Ar/O2 plasma with simultaneous injection of EtOH /acetic acid into the reaction chamber. Etching damage was also evaluated and no magnetic hysteresis degradation has been observed. Neutral beam etching technology has the capability to make breakthrough for fabricating MRAM device.

  10. Spectrometric analysis of process etching solutions of the photovoltaic industry--determination of HNO3, HF, and H2SiF6 using high-resolution continuum source absorption spectrometry of diatomic molecules and atoms.

    Science.gov (United States)

    Bücker, Stefan; Acker, Jörg

    2012-05-30

    The surface of raw multicrystalline silicon wafers is treated with HF-HNO(3) mixtures in order to remove the saw damage and to obtain a well-like structured surface of low reflectivity, the so-called texture. The industrial production of solar cells requires a consistent level of texturization for tens of thousands of wafers. Therefore, knowing the actual composition of the etch bath is a key element in process control in order to maintain a certain etch rate through replenishment of the consumed acids. The present paper describes a novel approach to quantify nitric acid (HNO(3)), hydrofluoric acid (HF), and hexafluosilicic acid (H(2)SiF(6)) using a high-resolution continuum source graphite furnace absorption spectrometer. The concentrations of Si (via Si atom absorption at the wavelength 251.611 nm, m(0),(Si)=130 pg), of nitrate (via molecular absorption of NO at the wavelength 214.803 nm, [Formula: see text] ), and of total fluoride (via molecular absorption of AlF at the wavelength 227.46 nm, m(0,F)=13 pg) were measured against aqueous standard solutions. The concentrations of H(2)SiF(6) and HNO(3) are directly obtained from the measurements. The HF concentration is calculated from the difference between the total fluoride content, and the amount of fluoride bound as H(2)SiF(6). H(2)SiF(6) and HNO(3) can be determined with a relative uncertainty of less than 5% and recoveries of 97-103% and 96-105%, respectively. With regards to HF, acceptable results in terms of recovery and uncertainty are obtained for HF concentrations that are typical for the photovoltaic industry. The presented procedure has the unique advantage that the concentration of both, acids and metal impurities in etch solutions, can be routinely determined by a single analytical instrument. Copyright © 2012 Elsevier B.V. All rights reserved.

  11. Effect of temperature and silicon resistivity on the elaboration of silicon nanowires by electroless etching

    Energy Technology Data Exchange (ETDEWEB)

    Fellahi, Ouarda, E-mail: fellahi_warda@yahoo.fr [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria); Hadjersi, Toufik [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systemes Dynamiques, Universite Ferhat Abbas de Setif (Algeria); Bouanik, Sihem; Manseri, Amar [Silicon Technology Development Unit, 02 Bd Frantz Fanon, BP 140 Alger-7 Merveilles, Algiers (Algeria)

    2010-11-01

    The morphology of silicon nanowire (SiNW) layers formed by Ag-assisted electroless etching in HF/H{sub 2}O{sub 2} solution was studied. Prior to the etching, the Ag nanoparticles were deposited on p-type Si(1 0 0) wafers by electroless metal deposition (EMD) in HF/AgNO{sub 3} solution at room temperature. The effect of etching temperature and silicon resistivity on the formation process of nanowires was studied. The secondary ion mass spectra (SIMS) technique is used to study the penetration of silver in the etched layers. The morphology of etched layers was investigated by scanning electron microscope (SEM).

  12. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  13. Patterned Platinum Etching Studies in an Argon High Density Plasma

    Science.gov (United States)

    Delprat, Sébastien; Chaker, Mohamed; Margot, Joëlle; Pépin, Henri; Tan, Liang; Smy, Tom

    1998-10-01

    A high-density surface-wave Ar plasma operated in the low pressure regime is used to study pure physical etching characteristics of platinum thin films. The platinum samples are RF biased so as to obtain a maximum DC self-bias voltage of 150 V. The sputter-etching characteristics are investigated as a function of the magnetic field intensity, the self-bias voltage and the gas pressure. At 1 mtorr, the etch rate is found to be a unique linear function of both the self-bias voltage and the ion density, independently of the magnetic field intensity value. However, even though the ion density increases, the etch rate is found to decrease with increasing pressure. In the low pressure regime, etch rates as high as 2000 A/min are obtained with a good selectivity over resist. Without any optimization of the etching process, we were able to etch 0.5 micron Pt trenches, 0.6 micron thick yielding fence-free profiles and sidewall angles (75º) that already meets the present industrial requirements of NVRAM technology.

  14. Characterization of aluminum surfaces: Sorption and etching

    Science.gov (United States)

    Polkinghorne, Jeannette Clera

    Aluminum, due to its low density and low cost, is a key material for future lightweight applications. However, like other structural materials, aluminum is subject to various forms of corrosion damage that annually costs the United States approximately 5% of its GNP [1]. The main goal is to investigate the effects of various solution anions on aluminum surfaces, and specifically probe pit initiation and inhibition. Using surface analysis techniques including X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy, results have been correlated with those obtained from electrochemical methods and a radiolabeling technique developed in the Wieckowski laboratory. Analysis of data has indicated that important variables include type of anion, solution pH, and applied electrode potential. While aggressive anions such as chloride are usually studied to elucidate corrosion processes to work ultimately toward inhibition, its corrosive properties can be successfully utilized in the drive for higher energy and smaller-scale storage devices. Fundamental information gained regarding anion interaction with the aluminum surface can be applied to tailor etch processes. Standard electrochemical techniques and SEM are respectively used to etch and analyze the aluminum substrate. Aluminum electrolytic capacitors are comprised of aluminum anode foil covered by an anodically grown aluminum oxide dielectric film, electrolytic paper impregnated with electrolyte, and aluminum cathode foil. Two main processes are involved in the fabrication of aluminum electrolytic capacitors, namely etching and anodic oxide formation. Etching of the anode foil results in a higher surface area (up to 20 times area enlargement compared to unetched foil) that translates into a higher capacitance gain, permitting more compact and lighter capacitor manufacture. Anodic oxide formation on the anode, creates the required dielectric to withstand high voltage operation. A

  15. Postoperative sensitivity of self etch versus total etch adhesive.

    Science.gov (United States)

    Yousaf, Ajmal; Aman, Nadia; Manzoor, Manzoor Ahmed; Shah, Jawad Ali; Dilrasheed

    2014-06-01

    To compare postoperative sensitivity following composite restoration placed in supra gingival class-V cavities using self etch adhesive and total etch adhesive. A randomized clinical trial. Operative Dentistry Department of Armed Forces Institute of Dentistry, Rawalpindi, from July to December 2009. A total of 70 patients having class-V supra gingival carious lesions were divided into two groups. Classes-V cavities not exceeding 3 mm were prepared. One treatment group was treated with self etch adhesive (adhe SE one Ivoclar) and the control group was treated with total-etch adhesive (Eco-Etch Ivoclar) after acid etching with 37% phosphoric acid. Light cured composite (Te-Econom Ivoclar) restoration was placed for both groups and evaluated for postoperative sensitivity immediately after restoration, after 24 hours and after one week. Data was recorded on visual analogue scale. Comparison of sensitivity between the two treatment groups on application cold stimulus after 24 hours of restoration showed significant difference; however, no statistically significant difference was observed at baseline, immediately after restoration and at 1 week follow-up with cold stimulus or compressed air application. Less postoperative sensitivity was observed at postoperative 24 hours assessment in restoration placed using SE adhesives compared to TE adhesives. Thus, the use of SE adhesives may be helpful in reducing postoperative sensitivity during 24 hours after restoration placement.

  16. ChISELS 1.0: theory and user manual :a theoretical modeler of deposition and etch processes in microsystems fabrication.

    Energy Technology Data Exchange (ETDEWEB)

    Plimpton, Steven James; Schmidt, Rodney Cannon; Ho, Pauline; Musson, Lawrence Cale

    2006-09-01

    Chemically Induced Surface Evolution with Level-Sets--ChISELS--is a parallel code for modeling 2D and 3D material depositions and etches at feature scales on patterned wafers at low pressures. Designed for efficient use on a variety of computer architectures ranging from single-processor workstations to advanced massively parallel computers running MPI, ChISELS is a platform on which to build and improve upon previous feature-scale modeling tools while taking advantage of the most recent advances in load balancing and scalable solution algorithms. Evolving interfaces are represented using the level-set method and the evolution equations time integrated using a Semi-Lagrangian approach [1]. The computational meshes used are quad-trees (2D) and oct-trees (3D), constructed such that grid refinement is localized to regions near the surface interfaces. As the interface evolves, the mesh is dynamically reconstructed as needed for the grid to remain fine only around the interface. For parallel computation, a domain decomposition scheme with dynamic load balancing is used to distribute the computational work across processors. A ballistic transport model is employed to solve for the fluxes incident on each of the surface elements. Surface chemistry is computed by either coupling to the CHEMKIN software [2] or by providing user defined subroutines. This report describes the theoretical underpinnings, methods, and practical use instruction of the ChISELS 1.0 computer code.

  17. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Science.gov (United States)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal catalyst crystallographic structure.

  18. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Su Min; Garay, Adrian Adalberto; Lee, Wan In; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH{sub 3}OH/Ar gas mixture. As the CH{sub 3}OH concentration in CH{sub 3}OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH{sub 3}OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO{sub 2} and RuO{sub 3} compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH{sub 3}OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO{sub 2} and RuO{sub 3} can be easily sputtered off.

  19. Crystallographic orientation dependent etching of graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Nemes-Incze, Peter; Biro, Laszlo Peter [Research Institute for Technical Physics and Materials Science, PO. Box 49, 1525 Budapest (Hungary); Magda, Gabor [Budapest University of Technology and Economics (BME), PO Box 91, 1521 Budapest (Hungary); Kamaras, Katalin [Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, 1525, Budapest (Hungary)

    2010-04-15

    Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO{sub 2} support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples. This etching technique opens up new possibilities in graphene patterning and modification. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Track etching technique in membrane technology

    Energy Technology Data Exchange (ETDEWEB)

    Apel, P. E-mail: apel@lnr.jinr.ru

    2001-06-01

    Track membrane (TM) technology is an example of industrial application of track etching technique. Track-etch membranes offer distinct advantages over conventional membranes due to their precisely determined structure. Their pore size, shape and density can be varied in a controllable manner so that a membrane with the required transport and retention characteristics can be produced. The use of heavy ion accelerators made it possible to vary LET of track-forming particles, angle distribution of pore channels and pore lengths. So far the track formation and etching process has been studied in much detail for several polymeric materials. Today we understand determining factors and have numerous empirical data enabling us to manufacture any particular product based on polyethylene terephthalate (PET) or polycarbonate (PC) films. Pore shape can be made cylindrical, conical, funnel-like, or cigar-like at will. A number of modification methods has been developed for creating TMs with special properties and functions. Applications of 'conventional' track membranes can be categorized into three groups: process filtration, cell culture, and laboratory filtration. The use in biology stands out among other areas. Nuclear track pores find diverse applications as model systems and as templates for the synthesis of micro- and nanostructures.

  1. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    Science.gov (United States)

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films.

  2. Hierarchical micro-nano structured Ti6Al4V surface topography via two-step etching process for enhanced hydrophilicity and osteoblastic responses.

    Science.gov (United States)

    Moon, Byeong-Seok; Kim, Sungwon; Kim, Hyoun-Ee; Jang, Tae-Sik

    2017-04-01

    Hierarchical micro-nano (HMN) surface structuring of dental implants is a fascinating strategy for achieving fast and mechanically stable fixation due to the synergetic effect of micro- and nano-scale surface roughness with surrounding tissues. However, the introduction of a well-defined nanostructure on a microstructure having complex surface geometry is still challenging. As a means of fabricating HMN surface on Ti6Al4V-ELI, target-ion induced plasma sputtering (TIPS) was used onto a sand-blasted, large-grit and acid-etched substrate. The HMN surface topography was simply controlled by adjusting the tantalum (Ta) target power of the TIPS technique, which is directly related to the Ta ion flux and the surface chemical composition of the substrate. Characterization using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and laser scanning microscopy (LSM) verified that well-defined nano-patterned surface structures with a depth of ~300 to 400nm and a width of ~60 to 70nm were uniformly distributed and followed the complex micron-sized surface geometry. In vitro cellular responses of pre-osteoblast cells (MC3T3-E1) were assessed by attachment and proliferation of cells on flat, nano-roughened, micro-roughened, and an HMN surface structure of Ti6Al4V-ELI. Moreover, an in vivo dog mandible defect model study was used to investigate the biological effect of the HMN surface structure compared with the micro-roughened surface. The results showed that the surface nanostructure significantly increased the cellular activities of flat and micro-roughened Ti, and the bone-to-implant contact area and new bone volume were significantly improved on the HMN surface structured Ti. These results support the idea that an HMN surface structure on Ti6Al4V-ELI alloy has great potential for enhancing the biological performance of dental implants.

  3. Low damage dry etch for III-nitride light emitters

    Science.gov (United States)

    Nedy, Joseph G.; Young, Nathan G.; Kelchner, Kathryn M.; Hu, Yanling; Farrell, Robert M.; Nakamura, Shuji; DenBaars, Steven P.; Weisbuch, Claude; Speck, James S.

    2015-08-01

    We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

  4. Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

    Science.gov (United States)

    Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

    2016-10-01

    The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO2, while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μm depth, corresponding to an aspect ratio of ≈ 53.

  5. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  6. ZERODUR: bending strength data for etched surfaces

    Science.gov (United States)

    Hartmann, Peter; Leys, Antoine; Carré, Antoine; Kerz, Franca; Westerhoff, Thomas

    2014-07-01

    In a continuous effort since 2007 a considerable amount of new data and information has been gathered on the bending strength of the extremely low thermal expansion glass ceramic ZERODUR®. By fitting a three parameter Weibull distribution to the data it could be shown that for homogenously ground surfaces minimum breakage stresses exist lying much higher than the previously applied design limits. In order to achieve even higher allowable stress values diamond grain ground surfaces have been acid etched, a procedure widely accepted as strength increasing measure. If surfaces are etched taking off layers with thickness which are comparable to the maximum micro crack depth of the preceding grinding process they also show statistical distributions compatible with a three parameter Weibull distribution. SCHOTT has performed additional measurement series with etch solutions with variable composition testing the applicability of this distribution and the possibility to achieve further increase of the minimum breakage stress. For long term loading applications strength change with time and environmental media are important. The parameter needed for prediction calculations which is combining these influences is the stress corrosion constant. Results from the past differ significantly from each other. On the basis of new investigations better information will be provided for choosing the best value for the given application conditions.

  7. Innovative, Inexpensive Etching Technique Developed for Polymer Electro- Optical Structures

    Science.gov (United States)

    Nguyen, Hung D.

    1999-01-01

    Electro-optic, polymer-based integrated optic devices for high-speed communication and computing applications offer potentially significant advantages over conventional inorganic electro-optic crystals. One key area of integrated optical technology--primary processing and fabrication--may particularly benefit from the use of polymer materials. However, as efforts concentrate on the miniaturization of electro-integrated circuit pattern geometries, the ability to etch fine features and smoothly sloped sidewalls is essential to make polymers useful for electro-integrated circuit applications. There are many existing processes available to etch polymer materials, but they all yield nearly vertical sidewalls. Vertical sidewalls are too difficult to reliably cover with a metal layer, and incomplete metalization degrades microwave performance, particularly at high frequency. However, obtaining a very sloped sidewall greatly improves the deposition of metal on the sidewall, leading to low-loss characteristics, which are essential to integrating these devices in highspeed electro-optic modulators. The NASA Lewis Research Center has developed in-house an inexpensive etching technique that uses a photolithography method followed by a simple, wet chemical etching process to etch through polymer layers. In addition to being simpler and inexpensive, this process can be used to fabricate smoothly sloped sidewalls by using a commercial none rodible mask: Spin-On-Glass. A commercial transparent material, Spin-On-Glass, uses processes and equipment similar to that for photoresist techniques.

  8. Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas

    Science.gov (United States)

    Yasuda, K.; Niraula, M.; Araki, N.; Miyata, M.; Kitagawa, S.; Kojima, M.; Ozawa, J.; Tsubota, S.; Yamaguchi, T.; Agata, Y.

    2017-09-01

    Dry etching characteristics of single crystal (100) CdTe epitaxial layers grown on GaAs substrates were studied using CH4, H2, and Ar as process gases in an electron cyclotron resonance plasma. A smooth and anisotropic etching was obtained with CH4, H2, and Ar. No hydrocarbon polymer was found on the etched surface, which was confirmed by x-ray photoelectron spectroscopy measurement. Etching of the CdTe surface was also possible with H2 and Ar; however, no etching was observed in the absence of H2. Dependence of the etch rate on plasma gas composition and flow rates was studied. Mechanisms of etching with and without CH4 supply were also studied. Etched CdTe layers also showed no deterioration of electrical properties, which was confirmed by photoluminescence measurement at 4.2 K and Hall measurement at 300 K.

  9. Study of the roughness in a photoresist masked, isotropic, SF6-based ICP silicon etch

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Petersen, Dirch Hjorth; Hansen, Ole

    2006-01-01

    In this paper we study the etching behavior and the resulting roughness in photoresist-masked isotropic silicon plasma etch performed in an inductively coupled plasma (ICP) etcher using SF6. We report detailed observations of the resulting roughness for various etching parameters, covering......: pressure from 2.5 to 70 mTorr, SF6 flow rate from 50 to 300 sccm, platen power from 0 to 16 W, and ICP power from 1000 to 3000 W. Etch processes with a normalized roughness below 0.005 were found at low pressure, p = 10 mTorr, while larger normalized roughness, above 0.02, occurred at higher pressures, p...... = 40 - 70 mTorr. Here the normalized roughness is the ratio of the roughness amplitude to the etch depth. The rough etching processes showed characteristic high-aspect-ratio and crystal-orientation-dependent surface morphology. The temporal evolution of this roughness was studied, and observations...

  10. Laser etching of transparent materials at a backside surface adsorbed layer

    Energy Technology Data Exchange (ETDEWEB)

    Boehme, R. [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Hirsch, D. [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany); Zimmer, K. [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Permoserstr. 15, 04318 Leipzig (Germany)]. E-mail: klaus.zimmer@iom-leipzig.de

    2006-04-30

    The laser etching using a surface adsorbed layer (LESAL) is a new method for precise etching of transparent materials with pulsed UV-laser beams. The influence of the processing parameters to the etch rate and the surface roughness for etching of fused silica, quartz, sapphire, and magnesium fluoride (MgF{sub 2}) is investigated. Low etch rates of 1 nm/pulse and low roughness of about 1 nm rms were found for fused silica and quartz. This is an indication that different structural modifications of the material do not affect the etching significantly as long as the physical properties are not changed. MgF{sub 2} and sapphire feature a principal different etch behavior with a higher etch rate and a higher roughness. Both incubation effects as well as the temperature dependence of the etch rate can be interpreted by the formation of a modified near surface region due to the laser irradiation. At repetition rates up to 100 Hz, no changes of the etch rate have been observed at moderate laser fluences.

  11. Regenerative Electroless Etching of Silicon.

    Science.gov (United States)

    Kolasinski, Kurt W; Gimbar, Nathan J; Yu, Haibo; Aindow, Mark; Mäkilä, Ermei; Salonen, Jarno

    2017-01-09

    Regenerative electroless etching (ReEtching), described herein for the first time, is a method of producing nanostructured semiconductors in which an oxidant (Ox1 ) is used as a catalytic agent to facilitate the reaction between a semiconductor and a second oxidant (Ox2 ) that would be unreactive in the primary reaction. Ox2 is used to regenerate Ox1 , which is capable of initiating etching by injecting holes into the semiconductor valence band. Therefore, the extent of reaction is controlled by the amount of Ox2 added, and the rate of reaction is controlled by the injection rate of Ox2 . This general strategy is demonstrated specifically for the production of highly luminescent, nanocrystalline porous Si from the reaction of V2 O5 in HF(aq) as Ox1 and H2 O2 (aq) as Ox2 with Si powder and wafers.

  12. Quantificational Etching of AAO Template

    Institute of Scientific and Technical Information of China (English)

    Guojun SONG; Dong CHEN; Zhi PENG; Xilin SHE; Jianjiang LI; Ping HAN

    2007-01-01

    Ni nanowires were prepared by electrodeposition in porous anodized aluminum oxide (AAO) template from a composite electrolyte solution. Well-ordered Ni nanowire arrays with controllable length were then made by the partial removal of AAO using a mixture of phosphoric acid and chromic acid (6 wt pct H3PO4:1.8 wt pct H3CrO4). The images of Ni nanowire arrays were studied by scanning electron microscopy (SEM) to determine the relationship between etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed from the template can be accurately controlled by controlling etching time.

  13. Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing

    Science.gov (United States)

    Shinoda, K.; Miyoshi, N.; Kobayashi, H.; Miura, M.; Kurihara, M.; Maeda, K.; Negishi, N.; Sonoda, Y.; Tanaka, M.; Yasui, N.; Izawa, M.; Ishii, Y.; Okuma, K.; Saldana, T.; Manos, J.; Ishikawa, K.; Hori, M.

    2017-05-01

    The demand for precisely controlled etching is increasing as semiconductor device geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will become one of the key technologies in semiconductor device manufacturing at nanometer dimensions. This review describes recent trends in semiconductor devices and some of the latest results on cyclic atomic-level etching. In particular, it focuses on two types of cyclic etching that use different heating procedures: infrared irradiation for isotropic etching and Ar+ ion bombardment for anisotropic etching. It describes how an inductively-coupled-plasma down-flow etching apparatus with infrared lamps can be used for isotropic cyclic etching. The isotropic cyclic etching of SiN involves the formation and thermal desorption of ammonium hexafluorosilicate-based surface modified layers. This method features high selectivity with respect to SiO2, atomic-level control of the amount of SiN etching, and isotropic etched features. On the other hand, the anisotropic cyclic etching with Ar+ ion bombardment uses a microwave electron-cyclotron-resonance plasma etching apparatus. The anisotropic process for poly Si is composed of cyclic repetitions of chlorine adsorption and Ar+ ion bombardment. The anisotropic process for SiN is composed of cyclic repetitions involving an adsorption step using hydrofluorocarbon chemistry and a desorption step using Ar+ ion bombardment. Potential applications of these isotropic/anisotropic cyclic etching processes are described.

  14. Profile Control of a Borosilicate-Glass Groove Formed by Deep Reactive Ion Etching

    CERN Document Server

    Akashi, T

    2008-01-01

    Deep reactive ion etching (DRIE) of borosilicate glass and profile control of an etched groove are reported. DRIE was carried out using an anodically bonded silicon wafer as an etching mask. We controlled the groove profile, namely improving its sidewall angle, by removing excessively thick polymer film produced by carbonfluoride etching gases during DRIE. Two fabrication processes were experimentally compared for effective removal of the film : DRIE with the addition of argon to the etching gases and a novel combined process in which DRIE and subsequent ultrasonic cleaning in DI water were alternately carried out. Both processes improved the sidewall angle, and it reached 85o independent of the mask-opening width. The results showed the processes can remove excessive polymer film on sidewalls. Accordingly, the processes are an effective way to control the groove profile of borosilicate glass.

  15. Understanding anisotropic plasma etching of two-dimensional polystyrene opals for advanced materials fabrication.

    Science.gov (United States)

    Akinoglu, Eser M; Morfa, Anthony J; Giersig, Michael

    2014-10-21

    Anisotropic deformation of polystyrene particles in an oxygenated (O2/Ar) plasma is observed for radio frequency (rf) plasma and inductively coupled plasma (ICP). A facile model based on a ratio of completely isotropic and completely anisotropic etching is presented to describe the anisotropy of the etching process and is implemented to determine the height of the spheroid-shaped polystyrene particles. In our systems, we find the plasma etching to be 54% isotropic in the rf plasma and 79% isotropic in the ICP. With this model, the maximum material deposition thickness for nanofabrication with plasma-etched nanosphere lithography or colloid lithography can be predicted. Moreover, the etching of polystyrene particles in an oxygenated plasma is investigated versus the etching time, gas flow, gas composition, temperature, substrate material, and particle size. The results of this study allow precise shape tuning during the fabrication of nanostructured surfaces with size-dependent properties for bionic, medical, and photonic applications.

  16. Layer-by-layer etching of LaAlSiO x

    Science.gov (United States)

    Omura, Mitsuhiro; Furumoto, Kazuhito; Matsuda, Kazuhisa; Sasaki, Toshiyuki; Sakai, Itsuko; Hayashi, Hisataka

    2017-06-01

    Layer-by-layer etching of LaAlSiO x using surface modification and selective removal steps was investigated. Selective removal of the LaAlSiO x layer modified by H2 plasma treatment was achieved by bias-power-adjusted C4F8/Ar plasma treatment. Self-limiting etching of LaAlSiO x with respect to the C4F8/Ar plasma step time was realized by initializing the chamber condition using O2 plasma. It was possible to control the saturation etching depth by changing the ion energy of the H2 plasma treatment. The repeatability of the self-limiting etching was confirmed, and the etching depth per cycle was about 0.6 nm. Layer-by-layer etching of LaAlSiO x was thus successfully realized using a three-step sequential process employing H2, C4F8/Ar and O2 plasmas.

  17. A novel oxidation-based wet etching method for AlGaN/GaN heterostructures

    Institute of Scientific and Technical Information of China (English)

    Cai Jinbao; Wang Jinyan; Liu Yang; Xu Zhe; Wang Maojun; Yu Min; Xie Bing

    2013-01-01

    A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation followed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700 ℃ could be etched off in a homothermal (70 ℃) KOH solution while the KOH solution had no etching effects on the region of the A1GaN/GaN heterostructure protected by a SiO2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900 ℃ followed by 30 min treatment in 70 ℃ KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed.

  18. Study of wet etching thin films of indium tin oxide in oxalic acid by monitoring the resistance

    Energy Technology Data Exchange (ETDEWEB)

    Mammana, Suelene S., E-mail: ssmammana@abinfo.com.br [Brazilian Association for Informatics - ABINFO, Rua Deusdete Martins Gomes 163, CEP 13084-723, Campinas, SP (Brazil); Greatti, Alessandra; Luiz, Francis H.; Costa, Francisca I. da; Mammana, Alaide P. [Brazilian Association for Informatics - ABINFO, Rua Deusdete Martins Gomes 163, CEP 13084-723, Campinas, SP (Brazil); Calligaris, Guilherme A.; Cardoso, Lisandro P. [Institute of Physics Gleb Wataghin, State University of Campinas-UNICAMP, CEP 13083-859, Campinas, SP (Brazil); Mammana, Carlos I.Z.; Engelsen, Daniel den [Brazilian Association for Informatics - ABINFO, Rua Deusdete Martins Gomes 163, CEP 13084-723, Campinas, SP (Brazil)

    2014-09-30

    We describe a study on wet etching of thin films of indium tin oxide (ITO) using a simple method by monitoring the resistance of the thin film in aqueous solutions of oxalic acid and hydrochloric acid. Generally three different regimes can be distinguished during etching ITO in acids: (1) initial etching, which is slow, (2) a fast etching phase and (3) slow etching stage at the end. These regimes are explained in terms of a porosity–roughness model. This porosity model has been confirmed largely by X-ray reflection measurements at grazing incidence, roughness measurements and scanning electron microscopy (SEM). A reliable method for monitoring the resistance during etching has been developed. This method is based on a 2-strips measuring jig with a very low series contact resistance. The activation energy of the etch rate of ITO films was found to be 80 ± 5 kJ/mol for oxalic acid and 56 ± 5 kJ/mol for HCl. SEM analyses in the final stage of the etching process indicate an enrichment of Sn in the residual film material. These observations are explained in terms of preferential etching of In{sub 2}O{sub 3}. X-ray analyses showed that the density of the ITO film decreased by etching. By adding ferric chloride to the oxalic acid solution we could accelerate the etch rate substantially. - Highlights: • Etching of indium tin oxide thin films by monitoring the resistance. • Oxalic acid has 2–3 times lower etch rate than concentrated HCl. • The etch rate in oxalic acid can be accelerated substantially by adding FeCl{sub 3}. • The proposed etching model for indium tin oxide was confirmed by X-ray analysis and scanning electron microscopy. • Energy Dispersive X-ray Spectroscopy analyses showed preferential etching of In{sub 2}O{sub 3}, enriching the film with SnO{sub 2}.

  19. Numerical and experimental studies of the carbon etching in EUV-induced plasma

    CERN Document Server

    Astakhov, D I; Lee, C J; Ivanov, V V; Krivtsun, V M; Yakushev, O; Koshelev, K N; Lopaev, D V; Bijkerk, F

    2015-01-01

    We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate.

  20. Structural and light-emission modification in chemically-etched porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Navarro-Urrios, D.; Oton, C.J. [Departamento de Fisica Basica, University of La Laguna, Avda. Astrofisico Fco. Sanchez, La Laguna (Spain); INFM and Dipartimento di Fisica, University of Trento, Via Sommarive 14, Povo, Trento (Italy); Perez-Padron, C.; Lorenzo, E.; Capuj, N.E. [Departamento de Fisica Basica, University of La Laguna, Avda. Astrofisico Fco. Sanchez, La Laguna (Spain); Gaburro, Z.; Pavesi, L. [INFM and Dipartimento di Fisica, University of Trento, Via Sommarive 14, Povo, Trento (Italy)

    2005-06-01

    After electrochemical etching, we have made a study of the effects generated on p{sup +}-type porous silicon layers when they are left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we have monitored the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of photoluminescence and transmission electron microscopy measurements for different post-etching times. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Compositional and photoluminescent properties of anodically and stain etched porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero-Lemus, R.; Hernandez-Rodriguez, C. [Laboratorio de Optica, Departamento de Fisica Basica, Universidad de La Laguna, 38204 S/C de Tenerife (Spain); Ben-Hander, F.A.; Martinez-Duart, J.M. [Departamento de Fisica Aplicada C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Fierro, J.L.G. [Instituto de Catalisis y Petroleoquimica, Consejo Superior de Investigaciones Cientificas (CSIC), Cantoblanco, 28049 Madrid (Spain)

    2003-05-01

    A comparison of the compositional and photoluminescent properties of stain etched (SE) and anodically etched (AE) porous silicon (PS) samples has been carried out. The silicon substrates used and the laboratory conditions are the same for both types of etching processes. The study is carried out varying the PS surface properties by means of different cleaning procedures and post-etching ambient conditions. The results demonstrate that the evolution of the photoluminescence and the composition are related for both types of PS (AE and SE). Thus, it seems highly likely that the photoluminescence mechanisms involved in both cases are similar. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  2. Reduced threshold all-optical bistability in etched quantum well microresonators

    Science.gov (United States)

    Rivera, T.; Ladan, F. R.; Izrael, A.; Azoulay, R.; Kuszelewicz, R.; Oudar, J. L.

    1994-02-01

    Etched vertical microresonators made of GaAs/AlGaAs multiple quantum wells produced by reactive ion etching was investigated to study the optical bistability phenomena. Reactive ion etching was preferred because of smooth vertical and minimization of density of surface recombination centers. A high cavity finesse was observed in the microresonators producing an optical bistability with wide hysteresis loops. A low threshold power of 70 microwatts was measured due to carrier confinement and vertical walls. The low bistability threshold power was attributed to self passivation happening during etching process, which produced a small surface recombination rate.

  3. Plasma Etching Improves Solar Cells

    Science.gov (United States)

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  4. Study of surfactant-added TMAH for applications in DRIE and wet etching-based micromachining

    Science.gov (United States)

    Tang, B.; Shikida, M.; Sato, K.; Pal, P.; Amakawa, H.; Hida, H.; Fukuzawa, K.

    2010-06-01

    In this paper, etching anisotropy is evaluated for a number of different crystallographic orientations of silicon in a 0.1 vol% Triton-X-100 added 25 wt% tetramethylammonium hydroxide (TMAH) solution using a silicon hemisphere. The research is primarily aimed at developing advanced applications of wet etching in microelectromechanical systems (MEMS). The etching process is carried out at different temperatures in the range of 61-81 °C. The etching results of silicon hemisphere and different shapes of three-dimensional structures in {1 0 0}- and {1 1 0}-Si surfaces are analyzed. Significantly important anisotropy, different from a traditional etchant (e.g. pure KOH and TMAH), is investigated to extend the applications of the wet etching process in silicon bulk micromachining. The similar etching behavior of exact and vicinal {1 1 0} and {1 1 1} planes in TMAH + Triton is utilized selectively to remove the scalloping from deep reactive-ion etching (DRIE) etched profiles. The direct application of the present research is demonstrated by fabricating a cylindrical lens with highly smooth etched surface finish. The smoothness of a micro-lens at different locations is measured qualitatively by a scanning electron microscope and quantitatively by an atomic force microscope. The present paper provides a simple and effective fabrication method of the silicon micro-lens for optical MEMS applications.

  5. Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops

    Energy Technology Data Exchange (ETDEWEB)

    English, Timothy S., E-mail: englisht@stanford.edu [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Provine, J [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States); Marshall, Ann F.; Koh, Ai Leen [Stanford Nano Shared Facilities, Stanford University, Stanford, CA 94305 (United States); Kenny, Thomas W. [Department of Mechanical Engineering, Stanford University, Stanford, CA 94305 (United States)

    2016-07-15

    Specimen preparation remains a practical challenge in transmission electron microscopy and frequently limits the quality of structural and chemical characterization data obtained. Prevailing methods for thinning of specimens to electron transparency are serial in nature, time consuming, and prone to producing artifacts and specimen failure. This work presents an alternative method for the preparation of plan-view specimens using isotropic vapor-phase etching with integrated etch stops. An ultrathin amorphous etch-stop layer simultaneously serves as an electron transparent support membrane whose thickness is defined by a controlled growth process such as atomic layer deposition with sub-nanometer precision. This approach eliminates the need for mechanical polishing or ion milling to achieve electron transparency, and reduces the occurrence of preparation induced artifacts. Furthermore, multiple specimens from a plurality of samples can be thinned in parallel due to high selectivity of the vapor-phase etching process. These features enable dramatic reductions in preparation time and cost without sacrificing specimen quality and provide advantages over wet etching techniques. Finally, we demonstrate a platform for high-throughput transmission electron microscopy of plan-view specimens by combining the parallel preparation capabilities of vapor-phase etching with wafer-scale micro- and nanofabrication. - Highlights: • Parallel thinning of plan-view specimens enables high-throughput microscopy studies. • The support membrane thickness is controlled with sub-nanometer precision. • No physical etching (polishing, dimpling, or ion milling) is required. • Large area and uniformly thin specimens are suitable for Cs-corrected HRTEM. • Wafer-scale integration enables custom specimens for in situ experiments.

  6. Self-organization of hydrogen gas bubbles rising above laser-etched metallic aluminum in a weakly basic aqueous solution.

    Science.gov (United States)

    Barmina, E V; Kuzmin, P G; Shafeev, G A

    2011-10-01

    Self-organization of hydrogen bubbles is reported under etching of metallic Aluminum in a weakly basic solution. The ascending gas bubbles drift to the areas with higher density of bubbles. As a result, ascending bubbles form various stationary structures whose symmetry is determined by the symmetry of the etched area. Bubbles are aligned along the bisectors of the contour of the etched area. The special laser-assisted profiling of the etched area in shape of a vortex induces a torque in the fluid above the etched area. The process is interpreted on the basis of Bernoulli equation.

  7. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  8. Methods for dry etching semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

    2016-11-01

    The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

  9. Selective Plasma Etching of Polymeric Substrates for Advanced Applications.

    Science.gov (United States)

    Puliyalil, Harinarayanan; Cvelbar, Uroš

    2016-06-07

    In today's nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a "zoo" of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  10. Selective Plasma Etching of Polymeric Substrates for Advanced Applications

    Directory of Open Access Journals (Sweden)

    Harinarayanan Puliyalil

    2016-06-01

    Full Text Available In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  11. Enhancement of Efficiency of a Solar Cell Fabricated on Black Si Made by Inductively Coupled Plasma-Reactive Ion Etching Process: A Case Study of a n-CdS/p-Si Heterojunction Cell.

    Science.gov (United States)

    Katiyar, Ajit K; Mukherjee, S; Zeeshan, M; Ray, Samit K; Raychaudhuri, A K

    2015-10-28

    We show that a significant enhancement of solar cell efficiency can be achieved in cells fabricated on black Si made using inductively coupled plasma-reactive ion etching (ICP-RIE). The ICP-RIE-fabricated black Si results in an array of vertically oriented defect-free Si nanocones (average height ∼150 nm; apex diameter ∼25 nm) exhibiting an average reflectance ≤2% over most of the relevant solar spectral range. The enabling role of the ultralow reflectance of the nanostructured black Si has been demonstrated using a heterojunction solar cell fabricated by depositing a n-type CdS film on p-Si nanocones followed by a transparent conducting coating of Al-doped ZnO (AZO). The fabricated n-CdS/p-Si heterojunction exhibits promising power conversion efficiency close to 3%, up from a mere efficient 0.15% for a similar cell fabricated on a planar Si. The effect of the fabrication process for the black Si on solar cell performance has been investigated through the measurements of carrier lifetime and surface recombination velocity. The accompanying model and simulation analysis shows that the conical structure leads to the effective dielectric constant varying smoothly from the value of the air at the top to the value of Si at the base over the length of the nanocone, leading to a substantial reduction of its reflectance.

  12. Fabrication Characteristics of Silicon Nanowires via the Electrochemical Electroless Etching Method.

    Science.gov (United States)

    Kang, ByeongSu; Jeong, Chae Hwan; Kim, Changheon; Kim, Min-Young; Choi, Bum Ho; Lee, Moo Sung; Kim, Ho-Sung

    2015-07-01

    A silicon nanowire structure was fabricated using the electrochemical electroless etching method, involving electroless plating and the electrochemical etching process. The reflection of the absorption layer with the nanowires' structure was about 5%, which is better than a bulk-type solar cell (10%).

  13. Fast patterning and dry-etch of SiNχ for high resolution nanoimprint templates

    Institute of Scientific and Technical Information of China (English)

    Shu Zhen; Wan Jing; Lu Bingrui; Xie Shenqi; Chen Yifang; Qu Xinping; Liu Ran

    2009-01-01

    We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography (EBL) and a dry etch technique on a SiNx substrate, intended for large area manufacturing. To this end,the highly sensitive chemically amplified resist (CAR), NEB-22, with negative tone was used. The EBL process first defines the template pattern in NEB-22, which is then directly used as an etching mask in the subsequent reactive ion etching (RIE) on the SiNx to form the desired templates. The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied, indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask. Nevertheless, our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.

  14. A novel restricted-flow etching method for glass

    Institute of Scientific and Technical Information of China (English)

    Hai-bo XIE; Yi ZHENG; Yu-run FAN; Xin FU; Hua-yong YANG

    2009-01-01

    This paper presents a novel micro fabrication method based on the laminar characteristics of micro-scale flows. Therein the separator and etchant are alternatively arranged in micro channels to form multiple laminar streams, and the etchant is located at the site where the reaction is supposed to occur. This new micro fabrication process can be used for the high aspect ratio etching inside a microchannel on glass substrates. Furthermore, the topography of microstructure patterned by this method can be controlled by changing the flow parameters of the separator and etchant. Experiments on the effects of flow parameters on the aspect ratio, side wall profile and etching rate were carried out on a glass substrate. The effect of flow rates on the etching rate and the micro topography was analyzed, in addition, experiments with dynamical changes of the flow rate ratio of the separator and etchant showed that the verticality of the side walls of microstructures can be significantly improved. The restricted flowing etching technique not only abates the isotropic effect in the traditional wet etching but also significantly reduces the dependence on expensive photolithographic equipment.

  15. Fabrication of polymer nanowires via maskless O2 plasma etching.

    Science.gov (United States)

    Du, Ke; Wathuthanthri, Ishan; Liu, Yuyang; Kang, Yong Tae; Choi, Chang-Hwan

    2014-04-25

    In this paper, we introduce a simple fabrication technique which can pattern high-aspect-ratio polymer nanowire structures of photoresist films by using a maskless one-step oxygen plasma etching process. When carbon-based photoresist materials on silicon substrates are etched by oxygen plasma in a metallic etching chamber, nanoparticles such as antimony, aluminum, fluorine, silicon or their compound materials are self-generated and densely occupy the photoresist polymer surface. Such self-masking effects result in the formation of high-aspect-ratio vertical nanowire arrays of the polymer in the reactive ion etching mode without the necessity of any artificial etch mask. Nanowires fabricated by this technique have a diameter of less than 50 nm and an aspect ratio greater than 20. When such nanowires are fabricated on lithographically pre-patterned photoresist films, hierarchical and hybrid nanostructures of polymer are also conveniently attained. This simple and high-throughput fabrication technique for polymer nanostructures should pave the way to a wide range of applications such as in sensors, energy storage, optical devices and microfluidics systems.

  16. Adiabatic tapered optical fiber fabrication in two step etching

    Science.gov (United States)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  17. Profile etching for prefiguring X-ray mirrors.

    Science.gov (United States)

    Liu, Chian; Qian, Jun; Assoufid, Lahsen

    2015-03-01

    A method to pre-shape mirror substrates through etching with a broad-beam ion source and a contoured mask is presented. A 100 mm-long elliptical cylinder substrate was obtained from a super-polished flat Si substrate with a 48 nm root-mean-square (r.m.s.) figure error and a 1.5 Å r.m.s. roughness after one profile-etching process at a beam voltage of 600 V without iteration. A follow-up profile coating can be used to achieve a final mirror. Profile etching and profile coating combined provide an economic way to make X-ray optics, such as nested Kirkpatrick-Baez mirrors.

  18. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  19. Etching high aspect ratio structures in silicon using sulfur hexafluoride/oxygen plasma

    Science.gov (United States)

    Belen, Rodolfo Jun

    Plasma etching of high aspect ratio structures in Si is an important step in manufacturing capacitors for memory devices and integrated components of microelectromechanical systems. In these applications, the goal is to etch deep features anisotropically with high etch rates and selectivities to the mask while maintaining good uniformity and reproducibility. This study investigates the etching of deep sub-half-micron diameter holes in Si using SF6/O 2 plasma. Etching experiments and plasma diagnostics are combined with modeling to gain a fundamental understanding of the etching and passivation kinetics and mechanism necessary in developing and scaling-up processes. Etching experiments are conducted in an inductively coupled plasma reactor with a planar coil. The substrate electrode is biased with a separate rf power supply to achieve independent control of the ion flux and energy. The effects of pressure, rf-bias and SF6-to-O2 ratio in the feed gas on the etch rate, selectivity and feature profile shape are studied using Si wafers patterned with 0.35 mum-diameter holes in a SiO2 mask. Visualization of profiles using scanning electron microscopy is complemented by plasma diagnostics such as mass spectrometry and actinometry. Simultaneous with experiments, reactor-scale and feature-scale models are developed to quantify the etching and passivation kinetics and identify the important kinetic parameters that affect feature profile evolution. Information from plasma diagnostics and previously published data are used to reduce the degrees of freedom in the model. Experiments are designed to directly measure kinetic parameters such as the chemical etch rate constant and the incidence angle dependence of the etching yield. Experimentally inaccessible parameters such as the sticking coefficients, etching yield and ion scattering parameters are determined through feature profile simulation. The key internal plasma parameters that affect profile evolution are the F-to-O and F

  20. Growth of carbon nanotubes on Si/SiO{sub 2} wafer etched by hydrofluoric acid under different etching durations

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Lling-Lling [Chemical Engineering Discipline, School of Engineering, Monash University, Jalan Lagoon Selatan, 46150 Bandar Sunway, Selangor (Malaysia); Chai, Siang-Piao, E-mail: chai.siang.piao@monash.edu [Chemical Engineering Discipline, School of Engineering, Monash University, Jalan Lagoon Selatan, 46150 Bandar Sunway, Selangor (Malaysia); Mohamed, Abdul Rahman [School of Chemical Engineering, Universiti Sains Malaysia, Engineering Campus, Seri Ampangan, 14300 NibongTebal, Pulau Pinang (Malaysia)

    2012-05-15

    The preparation of SiO{sub 2} nanoparticles for the metal-free catalyst growth of carbon nanotubes (CNTs) was investigated. SiO{sub 2} nanoparticles were generated by etching Si/SiO{sub 2} wafers with 48-50% hydrofluoric acid. Etching duration was varied to study its effects on the generation of the SiO{sub 2} nanoparticles. Atomic force microscopy characterization showed that etching at 1 min was the most effective considering the significant numbers of SiO{sub 2} nanoparticles obtained under this condition. The wafer etched at 1 min after chemical vapor deposition at 900 Degree-Sign C for 1 h demonstrated a low I{sub D}/I{sub G} from Raman analysis which establishes that CNTs with highly ordered graphitic structures were grown. Raman analysis also showed a strong radial breathing mode peak in the low-frequency range for the substrate following the 1 min etching process after the reaction.

  1. Fabrication of nanostructures on polyethylene terephthalate substrate by interference lithography and plasma etching.

    Science.gov (United States)

    Zhu, Mei; Li, Bihan; Choi, W K

    2013-08-01

    We report results of an attempt to create nanostructures on polyethylene terephthalate substrate using the interference lithography and plasma etching technique. Methods to create nanogrooves, nanopillars, nanofins and nanoholes have been presented. The effects of chemical and physical etching associated with plasma etching on the synthesis of nanostructures were examined in detail. Different etch rates and anisotropy as a function of plasma power and pressure were reported and explained, offering good understanding of the physics of the etching process. Ways to improve anisotropy have been suggested and experimentally verified. We show that this method can produce nanostructured substrate with wide surface coverage and good uniformity. The flexibility of this method was demonstrated in that the period and shapes of the nanopattern can be varied easily without resorting to complicated fabrication processes and machinery. Our method brings forth an easy and cost-effective way to create uniform nanostructures on a large area in a controllable fashion.

  2. Etching of organosilicate glass low-k dielectric films in halogen plasmas

    CERN Document Server

    Vitale, S A

    2002-01-01

    The chemistry and kinetics of alternative etching chemistries for low-k dielectric materials are explored to improve the anisotropy of the etching process and to reduce the problems associated with postetch clean-up. Etching rates, selectivities, and etching yields of Black Diamond and Coral organosilicate glasses (OSGs) have been measured. Black Diamond and Coral are etched rapidly in F sub 2 , Cl sub 2 , and HBr high density plasmas, and Cl sub 2 +HBr plasmas have been identified as a viable process chemistry with several advantages over traditional fluorocarbon plasmas. The OSG films are not spontaneously etched by F sub 2 , Cl sub 2 , HBr molecules, Cl, or Br atoms, however, F atoms etch the OSGs spontaneously. F, Cl, and H atoms extract a substantial amount of carbon from the films, but Cl and H do not attack the OSG oxide matrix. The Coral films are more strongly depleted of carbon after halogen plasma etching than the Black Diamond. In addition, oxygen atoms extract nearly all of the carbon and nitroge...

  3. Applied-voltage dependence on conductometric track etching of poly(vinylidene fluoride) films

    Energy Technology Data Exchange (ETDEWEB)

    Nuryanthi, N. [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Yamaki, T., E-mail: yamaki.tetsuya@jaea.go.jp [Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Koshikawa, H.; Asano, M.; Sawada, S.; Hasegawa, S.; Maekawa, Y. [Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Katsumura, Y. [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-11-01

    We investigated the conductometric etching of heavy-ion-irradiated poly(vinylidene fluoride) (PVDF) films to study their pore growth behavior, which was estimated from radial etch rates under the application of different voltages. The plateau of the pore diameter seen in a bulk etching region was constant at an applied voltage ranging from 0.1 to 3.0 V, while the breakthrough time varied considerably. Employing the first derivative of the conductometric curve, corresponding to the radial etch rate, R, enabled us to clearly analyze parameters reflecting the track structures (i.e., the maximum radial etch rate, R{sub max}, and the time for the diameter to reach the final plateau, T{sub E}). Interestingly, these two parameters were significantly influenced by the applied voltage. There was a trend toward increasing values of R{sub max} and, in contrast, decreasing levels of T{sub E} as the applied voltage was increased. These promotional effects of the etching process can be rationalized by considering the electrophoretic migration of dissolved species in and out of each pore. Thus, conductometric etching under different voltage conditions offers the ability to control pore geometries by optimizing the etching process in the transverse direction as well as in the thickness direction.

  4. Cryo-Etched Black Silicon for Use as Optical Black

    Science.gov (United States)

    Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

    2011-01-01

    Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

  5. Fabrication of different pore shapes by multi-step etching technique in ion-irradiated PET membranes

    Energy Technology Data Exchange (ETDEWEB)

    Mo, D., E-mail: modan@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Liu, J.D.; Duan, J.L.; Yao, H.J. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Latif, H. [Department of Physics, Forman Christian College, Lahore 54600 (Pakistan); Cao, D.L.; Chen, Y.H.; Zhang, S.X.; Zhai, P.F.; Liu, J. [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2014-08-15

    Highlights: •A new multi-step etching process for pore fabrication was proposed. •The etching process relies on variation of etchant and track annealing. •Various new pore shapes in track etched PET membranes were obtained. -- Abstract: A method for the fabrication of different pore shapes in polyethylene terephthalate (PET)-based track etched membranes (TEMs) is reported. A multi-step etching technique involving etchant variation and track annealing was applied to fabricate different pore shapes in PET membranes. PET foils of 12-μm thickness were irradiated with Bi ions (kinetic energy 9.5 MeV/u, fluence 10{sup 6} ions/cm{sup 2}) at the Heavy Ion Research Facility (HIRFL, Lanzhou). The cross-sections of fundamental pore shapes (cylinder, cone, and double cone) were analyzed. Funnel-shaped and pencil-shaped pores were obtained using a two-step etching process. Track annealing was carried out in air at 180 °C for 120 min. After track annealing, the selectivity of the etching process decreased, which resulted in isotropic etching in subsequent etching steps. Rounded cylinder and rounded cone shapes were obtained by introducing a track-annealing step in the etching process. Cup and spherical funnel-shaped pores were fabricated using a three- and four-step etching process, respectively. The described multi-step etching technique provides a controllable method to fabricate new pore shapes in TEMs. Introduction of a variety of pore shapes may improve the separation properties of TEMs and enrich the series of TEM products.

  6. SF6 plasma etching of silicon nanocrystals.

    Science.gov (United States)

    Liptak, R W; Devetter, B; Thomas, J H; Kortshagen, U; Campbell, S A

    2009-01-21

    An SF(6)-based plasma has been employed to perform in-flight etching of silicon nanocrystals (Si-NCs) after they were synthesized in an SiH(4)-based plasma. The photoluminescence of the Si-NCs blue-shifts after etching, indicating an etching-induced size reduction of the Si-NCs. It is shown that both the SF(6) plasma power and the flow rate can be utilized to control the etch rate (and thus the size reduction) of the Si-NCs. The SF(6) etched Si-NCs show only low concentrations of residual impurities other than fluorine. Quantum yields as high as 50% have been observed from these SF(6) etched Si-NCs despite oxidation.

  7. Etching of glass microchips with supercritical water.

    Science.gov (United States)

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-07

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  8. Selective etching of silicon carbide films

    Science.gov (United States)

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  9. Results from modeling and simulation of chemical downstream etch systems

    Energy Technology Data Exchange (ETDEWEB)

    Meeks, E.; Vosen, S.R.; Shon, J.W.; Larson, R.S.; Fox, C.A.; Buchenauer

    1996-05-01

    This report summarizes modeling work performed at Sandia in support of Chemical Downstream Etch (CDE) benchmark and tool development programs under a Cooperative Research and Development Agreement (CRADA) with SEMATECH. The Chemical Downstream Etch (CDE) Modeling Project supports SEMATECH Joint Development Projects (JDPs) with Matrix Integrated Systems, Applied Materials, and Astex Corporation in the development of new CDE reactors for wafer cleaning and stripping processes. These dry-etch reactors replace wet-etch steps in microelectronics fabrication, enabling compatibility with other process steps and reducing the use of hazardous chemicals. Models were developed at Sandia to simulate the gas flow, chemistry and transport in CDE reactors. These models address the essential components of the CDE system: a microwave source, a transport tube, a showerhead/gas inlet, and a downstream etch chamber. The models have been used in tandem to determine the evolution of reactive species throughout the system, and to make recommendations for process and tool optimization. A significant part of this task has been in the assembly of a reasonable set of chemical rate constants and species data necessary for successful use of the models. Often the kinetic parameters were uncertain or unknown. For this reason, a significant effort was placed on model validation to obtain industry confidence in the model predictions. Data for model validation were obtained from the Sandia Molecular Beam Mass Spectrometry (MBMS) experiments, from the literature, from the CDE Benchmark Project (also part of the Sandia/SEMATECH CRADA), and from the JDP partners. The validated models were used to evaluate process behavior as a function of microwave-source operating parameters, transport-tube geometry, system pressure, and downstream chamber geometry. In addition, quantitative correlations were developed between CDE tool performance and operation set points.

  10. Post-synthetic Anisotropic Wet-Chemical Etching of Colloidal Sodalite ZIF Crystals

    Science.gov (United States)

    Avci, Civan; Ariñez-Soriano, Javier; Carné-Sánchez, Arnau; Guillerm, Vincent; Carbonell, Carlos; Imaz, Inhar; Maspoch, Daniel

    2016-01-01

    Controlling the shape of metal-organic framework (MOF) crystals is important for understanding their crystallization and useful for myriad applications. However, despite the many advances in shaping of inorganic nanoparticles, post-synthetic shape control of MOFs and, in general, molecular crystals remains embryonic. Herein we report using a simple wet-chemistry process at room temperature to control the anisotropic etching of colloidal ZIF-8 and ZIF-67 crystals. Our work enables uniform reshaping of these porous materials into unprecedented morphologies, including cubic and tetrahedral crystals, and even hollow boxes, via acid-base reaction and subsequent sequestration of leached metal ions. Etching tests on these ZIFs reveal that etching occurs preferentially in the crystallographic directions richer in metal-ligand bonds; that, among these directions, the etching rate tends to be faster on the crystal surfaces of higher dimensionality; and that the etching can be modulated by adjusting the pH of the etchant solution. PMID:26458081

  11. Focused electron beam induced etching of titanium with XeF{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Schoenaker, F J; Cordoba, R; Fernandez-Pacheco, R; Magen, C; Zuriaga-Monroy, C; Ibarra, M R [Instituto de Nanociencia de Aragon, Universidad de Zaragoza, E-50018 Zaragoza (Spain); Stephan, O [Laboratoire de Physique des Solides, CNRS UMR 8502, Universite Paris Sud XI, Batiment 510, F-91405 Orsay (France); De Teresa, J M, E-mail: deteresa@unizar.es [Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain)

    2011-07-01

    Titanium is a relevant technological material due to its extraordinary mechanical and biocompatible properties, its nanopatterning being an increasingly important requirement in many applications. We report the successful nanopatterning of titanium by means of focused electron beam induced etching using XeF{sub 2} as a precursor gas. Etch rates up to 1.25 x 10{sup -3} {mu}m{sup 3} s{sup -1} and minimum pattern sizes of 80 nm were obtained. Different etching parameters such as beam current, beam energy, dwell time and pixel spacing are systematically investigated, the etching process being optimized by decreasing both the beam current and the beam energy. The etching mechanism is investigated by transmission electron microscopy. Potential applications in nanotechnology are discussed.

  12. Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

    Science.gov (United States)

    Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

    2015-01-01

    The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

  13. Etching.

    Science.gov (United States)

    1980-09-01

    4U c Z . CC 0.0 V 0-01w.0 OCMCC.Ca 0 II 4- 00 La-1 e - .- 0 04’ . £0 tO4 -u 41 ’ Dato C 5-4-00LLi1 c-1 C- - E-1 4-C0 V) -OU1 I~ rC ŔE 0 *z 0 LW 04 c...Z&.. 4.-c o x *C L )P0 A0 0 a54. U * 0 3 i;- L )I.. l C C -44.0 0 2 o; c 0. ama a- .u OE Voz 0 UL 0f ja - .a r DC L _j4 5c .,R r- C *.-* 0 - )W- . 0

  14. Combined resist and etch modeling and correction for the 45-nm node

    Science.gov (United States)

    Drapeau, Martin; Beale, Dan

    2006-10-01

    Emerging resist and etch process technologies for the 45 nm node exhibit new types of non-optical proximity errors, thus placing new demands on OPC modeling tools. In a previous paper (SPIE Vol. 6283-75) we had experimentally demonstrated a full resist and etch model calibration and verified the stability of the model using 45nm node standard logic cells. The etch model used a novel non-linear etch modeling object in combination with conventional convolution Kernels. Building upon those results, this paper focuses on the correction of patterns. We demonstrate a two-stage optical/resist and etch correction using calibrated models, including the use of non-linear etch modeling objects. Optical/resist and etch models are built separately and used sequentially to correct a 45nm logic pattern. Critical areas of the pattern affected by etch are analyzed and used to verify the correction. Verification of the correction is obtained through comparison between the simulated contours with the design intent.

  15. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  16. Chemical-mechanical planarization aided dimple etching for self alignment.

    Science.gov (United States)

    Jeong, Moonki; Choi, Sungha; Guo, Yongchang; Park, Jaehong; Jeong, Haedo

    2012-04-01

    Through silicon via (TSV) technology is becoming a mainstream method of building 3-dimensional integrated circuits (3D IC). In particular, TSV Cu CMP is a critical process to remove excess Cu and makes a planar surface which requires a removal rate higher than 5 microm/min and a dishing lower than 0.3 microm. This paper focuses on the development of a new self-alignment method using dimples on the TSV Cu back surface. We tried to find an application potential of a bump-dimple structure for self alignment using a pretest tool of a solder ball array structure. Chemical-mechanical planarization (CMP) aided dimple etching is carefully studied as a key solution for deep and uniform dimple formation. The experiment shows that CMP is an excellent process to generate a clean oxide surface and a clear dishing on the Cu TSV, resulting in a seed for etching. Finally, etching realizes a uniform dimple depth of 7 microm to 9 microm in spite of changes of via diameter from 10 microm to 50 microm after only 15 sec etching.

  17. Surface characterization after subaperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

    2010-07-01

    In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

  18. Non-Lithographic Silicon Micromachining Using Inkjet and Chemical Etching

    Directory of Open Access Journals (Sweden)

    Sasha Hoshian

    2016-12-01

    Full Text Available We introduce a non-lithographical and vacuum-free method to pattern silicon. The method combines inkjet printing and metal assisted chemical etching (MaCE; we call this method “INKMAC”. A commercial silver ink is printed on top of a silicon surface to create the catalytic patterns for MaCE. The MaCE process leaves behind a set of silicon nanowires in the shape of the inkjet printed micrometer scale pattern. We further show how a potassium hydroxide (KOH wet etching process can be used to rapidly etch away the nanowires, producing fully opened cavities and channels in the shape of the original printed pattern. We show how the printed lines (width 50–100 µm can be etched into functional silicon microfluidic channels with different depths (10–40 µm with aspect ratios close to one. We also used individual droplets (minimum diameter 30 µm to produce cavities with a depth of 60 µm and an aspect ratio of two. Further, we discuss using the structured silicon substrate as a template for polymer replication to produce superhydrophobic surfaces.

  19. Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon

    OpenAIRE

    Lingyu Kong; Binayak Dasgupta; Yi Ren; Parsian K. Mohseni; Minghui Hong; Xiuling Li; Wai Kin Chim; Sing Yang Chiam

    2016-01-01

    In this work, we investigate the transport processes governing the metal-assisted chemical etching (MacEtch) of silicon (Si). We show that in the oxidation of Si during the MacEtch process, the transport of the hole charges can be accomplished by the diffusion of metal ions. The oxidation of Si is subsequently governed by a redox reaction between the ions and Si. This represents a fundamentally different proposition in MacEtch whereby such transport is understood to occur through hole carrier...

  20. Study of selective chemical downstream plasma etching of silicon nitride and silicon oxide for advanced patterning applications

    Science.gov (United States)

    Prévost, Emilie; Cunge, Gilles; De-Buttet, Côme; Lagrasta, Sebastien; Vallier, Laurent; Petit-Etienne, Camille

    2017-03-01

    The evolution of integrated components in the semiconductors industry is nowadays looking for ultra-high selective etching processes in order to etch high aspect ratio structures in complicated stacks of ultrathin layers. For ultra-high selective processes, typical plasma etching show limitations, while wet etching processes reach limitations due to capillary forces. For these reasons there is a great regain of interest today in chemical downstream etching systems (CDE), which combine the advantages of plasma and wet treatments. The absence of photons and ions allow to minimize damages and to achieve very high selectivity (in isotropic etching). In this work we investigated the parameters enabling to etch selectively the Si3N4 to the SiO2 by CDE. We shown that the correlation between the gas mixture and the wafer temperature is the key to obtain the desired selectivity. In order to optimize the processing window, the mixture composition (NF3/N2/O2/He) and the temperatures were screened by several DOE (Designs Of Experiments). Conditions are found in which the etching selectivity between the two silicon alloys is higher than 100, which allowed us to clean out sacrificial Si3N4 layers in very high aspect ratio (about 100) silicon trenches of nanometric size (60nm) without damaging the 10nm thin SiO2 caping layer (between the Si and the Si3N4). This demonstrates that downstream plasma etching can perform better than wet treatments in this case.

  1. Thermal neutron dosimetry using electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Su, S.J.; Sanders, M.E.; Morgan, K.Z.

    1979-07-10

    This study demonstrates the feasibility of using high LET particle radiators to determine the thermal neutron dose by reaction particle registration in low background polycarbonate foils using electrochemical etching. When used in conjunction with the already proven fast neutron recoil particle track registration technique, a viable fast and thermal neutron dosimeter is realized with the advantages of being: non-fading, insensitive to low LET radiation reactions, inexpensive in both processing and materials, useable over a wide dose range, a permanant record and good reproducibility, highly sensitive, and tissue equivalent and a dose equivalent response over a wide range. Most importantly, it finally provides a simple and reliable dosimeter for both the fast and thermal neutron components.

  2. Erbium doped stain etched porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Diaz-Herrera, B. [Departamento de Energia Fotovoltaica, Instituto Tecnologico de Energias Renovables (ITER), Poligono Industrial de Granadilla, 38611 S/C Tenerife (Spain); Guerrero-Lemus, R. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain)], E-mail: rglemus@ull.es; Mendez-Ramos, J.; Rodriguez, V.D. [Departamento de Fisica Fundamental, Experimental Electronica y Sistemas, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-Rodriguez, C. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Martinez-Duart, J.M. [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Cantoblanco, Madrid (Spain)

    2008-01-15

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO{sub 3} solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er{sup 3+} ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy.

  3. Fundamental Technical Elements of Freeze-fracture/Freeze-etch in Biological Electron Microscopy

    Science.gov (United States)

    Freeze-fracture/freeze-etch describes a process whereby specimens, typically biological or nanomaterial in nature, are frozen, fractured, and replicated to generate a carbon/platinum "cast" intended for examination by transmission electron microscopy. Specimens are subjected to u...

  4. Fundamental Technical Elements of Freeze-fracture/Freeze-etch in Biological Electron Microscopy

    Science.gov (United States)

    Freeze-fracture/freeze-etch describes a process whereby specimens, typically biological or nanomaterial in nature, are frozen, fractured, and replicated to generate a carbon/platinum "cast" intended for examination by transmission electron microscopy. Specimens are subjected to u...

  5. Atomic Layer Etching : What can we learn from Atomic Layer Deposition?

    NARCIS (Netherlands)

    Faraz, T.; Roozeboom, F.; Knoops, H.C.M.; Kessels, W.M.M.

    2015-01-01

    Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next

  6. In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Marchack, Nathan; Kim, Taeseung; Chang, Jane P., E-mail: jpchang@seas.ucla.edu [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095 (United States); Blom, Hans-Olof [Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden)

    2015-05-15

    The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.

  7. Microelectrode array fabrication by electrical discharge machining and chemical etching.

    Science.gov (United States)

    Fofonoff, Timothy A; Martel, Sylvain M; Hatsopoulos, Nicholas G; Donoghue, John P; Hunter, Ian W

    2004-06-01

    Wire electrical discharge machining (EDM), with a complementary chemical etching process, is explored and assessed as a method for developing microelectrode array assemblies for intracortically recording brain activity. Assembly processes based on these methods are highlighted, and results showing neural activity successfully recorded from the brain of a mouse using an EDM-based device are presented. Several structures relevant to the fabrication of microelectrode arrays are also offered in order to demonstrate the capabilities of EDM.

  8. Dry Etching of GaAs to Fabricate Via-Hole Grounds in Monolithic Microwave Integrated Circuits

    Directory of Open Access Journals (Sweden)

    D.S. Rawal

    2009-07-01

    Full Text Available This study investigates the dry etching of 60 mm dia, 200 mm deep holes for fabrication of through substrate via holes for grounding monolithic microwave integrated circuits (MMICs, on 3-inch dia semiinsulating GaAs wafer using RIE and ICP processes with CFC and non-CFC gas chemistry, respectively. The effect of various process parameters on GaAs etch rate and resultant etch profile was investigated. Two kinds of masks, photoresist and Ni, were used to etch GaAs and performance was compared by investigating effect on etch rate, etch depth, etch profile, and surface morphology. The etch profile, etch depth, and surface morphology of as-etched samples were characterised by scanning electron microscopy. The desired 200 mm deep strawberry profile was obtained at 40 mTorr for both RIE and ICP processes with an etch rate of ~1.3 mm/min and ~4 mm/min respectively. Ni metal mask was used for RIE process due to poor photoresist selectivity, whereas ICP process utilised photoresist as mask. The vias were then metallised by depositing a thin seed layer of Ti/Au (1000 Å using radio frequency sputtering and Au (~5 mm electroplated to connect the frontside pad and back side ground plane. The typical parasitic inductance offered by these via for RIE and ICP processes was ~76 pH and 83 pH respectively, which is well within the acceptable limits. The developed process was finally integrated to in-house MMIC production line.Defence Science Journal, 2009, 59(4, pp.363-370, DOI:http://dx.doi.org/10.14429/dsj.59.1535

  9. Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementarymetal-oxide-semiconductor devices

    Institute of Scientific and Technical Information of China (English)

    Li Yongliang; Xu Qiuxia

    2011-01-01

    A novel dry etching process of a poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor (CMOS) devices is investigated.Our strategy to process a poly-Si/TaN/HfSiON gate stack is that each layer of gate stack is selectively etched with a vertical profile.First,a three-step plasma etching process is developed to get a vertical poly-Si profile and a reliable etch-stop on a TaN metal gate.Then different BCl3-based plasmas are applied to etch the TaN metal gate and find that BC13/Cl2/O2/Ar plasma is a suitable choice to get a vertical TaN profile.Moreover,considering that C12 almost has no selectivity to Si substrate,BCl3/Ar plasma is applied to etch HfSiON dielectric to improve the selectivity to Si substrate after the TaN metal gate is vertically etched off by the optimized BCl3/Cl2/O2/Ar plasma.Finally,we have succeeded in etching a poly-Si/TaN/HfSiON stack with a vertical profile and almost no Si loss utilizing these new etching technologies.

  10. Roughness kinetic and multiaffinity of anisotropic etched silicon

    Science.gov (United States)

    Hosseinabadi, S.; Rajabi, M.

    2017-02-01

    The effect of etching time (20-200 min) on surface roughness, statistical and fractal properties of silicon wafers during anisotropic chemical etching by KOH is investigated experimentally and theoretically. The evolution of surface morphology of silicon wafers during an anisotropic chemical etching is investigated by using field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and statistical methods. FESEM investigation shows the formation of pyramid like silicon micro structures that disappear in large time scales. The surface roughness increases and decreases periodically in time with a decreasing exponentially trend. The statistical analysis were performed by calculating the roughness and correlation length, distribution of height fluctuations and two-dimensional multifractal detrending moving average (MFDMA). The fractal nature of silicon wafer changes from mono fractal to multi fractal scaling by etching process and formation of pyramid like silicon nanostructures on it. The strength of multi-fractallity has not an increasing monotonic behavior. The enhancement of irregularities could be a reason for reduction of surface roughness and structure downfall.

  11. Plasma-etched nanostructures for optical applications (Presentation Recording)

    Science.gov (United States)

    Schulz, Ulrike; Rickelt, Friedrich; Munzert, Peter; Kaiser, Norbert

    2015-08-01

    A basic requirement for many optical applications is the reduction of Fresnel-reflections. Besides of interference coatings, nanostructures with sub-wavelength size as known from the eye of the night-flying moth can provide antireflective (AR) properties. The basic principle is to mix a material with air on a sub-wavelength scale to decrease the effective refractive index. To realize AR nanostructures on polymers, the self-organized formation of stochastically arranged antireflective structures using a low-pressure plasma etching process was studied. An advanced procedure involves the use of additional deposition of a thin oxide layer prior etching. A broad range of different structure morphologies exhibiting antireflective properties can be generated on almost all types of polymeric materials. For applications on glass, organic films are used as a transfer medium. Organic layers as thin film materials were evaluated to identify compounds suitable for forming nanostructures by plasma etching. The vapor deposition and etching of organic layers on glass offers a new possibility to achieve antireflective properties in a broad spectral range and for a wide range of light incidence.

  12. Effects of Alkaline Pre-Etching to Metal Hydride Alloys

    Directory of Open Access Journals (Sweden)

    Tiejun Meng

    2017-10-01

    Full Text Available The responses of one AB5, two AB2, four A2B7, and one C14-related body-centered-cubic (BCC metal hydrides to an alkaline-etch (45% KOH at 110 °C for 2 h were studied by internal resistance, X-ray diffraction, scanning electron microscope, inductively coupled plasma, and AC impedance measurements. Results show that while the etched rare earth–based AB5 and A2B7 alloys surfaces are covered with hydroxide/oxide (weight gain, the transition metal–based AB2 and BCC-C14 alloys surfaces are corroded and leach into electrolyte (weight loss. The C14-predominated AB2, La-only A2B7, and Sm-based A2B7 showed the most reduction in the internal resistance with the alkaline-etch process. Etched A2B7 alloys with high La-contents exhibited the lowest internal resistance and are suggested for use in the high-power application of nickel/metal hydride batteries.

  13. Controlled MoS₂ layer etching using CF₄ plasma.

    Science.gov (United States)

    Jeon, Min Hwan; Ahn, Chisung; Kim, HyeongU; Kim, Kyong Nam; LiN, Tai Zhe; Qin, Hongyi; Kim, Yeongseok; Lee, Sehan; Kim, Taesung; Yeom, Geun Young

    2015-09-04

    A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS2 was etched by exposure to a CF4 plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS2 layers could be controlled by exposure to the CF4 plasma for a certain processing time. However, XPS data showed that exposure to CF4 plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS2 surface. After exposure to a H2S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS2 surface could be effectively removed.

  14. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    OpenAIRE

    SABATINI, Camila

    2013-01-01

    Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS) of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II) and a one-step self-etch adhesive (BeautiBond) were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned t...

  15. Anisotropic textured silicon obtained by stain-etching at low etching rates

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-DIaz, B [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Guerrero-Lemus, R [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Marrero, N [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-RodrIguez, C [Departamento de Fisica Basica, Universidad de La Laguna, Avda, AstrofIsico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Ben-Hander, F A [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain); MartInez-Duart, J M [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

    2006-02-21

    The structure, luminescence and etching kinetics for porous silicon stain-etched at different temperatures are studied. The results reveal that for temperatures below 10 deg. C and for short etching times, a novel anisotropic structure based on surface roughness preferentially oriented in the (100) direction is observed. At temperatures higher than 10 deg. C or large etching times, typical macropores and mesopores with non-preferential pore wall orientation are detected. The luminescence spectra of the samples with preferential surface roughness orientation are red-shifted with respect to the samples with typical isotropic orientation. The results are interpreted in terms of average etching rates and pore growth.

  16. Use of chemical etching of CR-39 foils at elevated temperature for fast neutron personnel monitoring in India

    Science.gov (United States)

    Sathian, Deepa; Rohatgi, Rupali; Jayalakshmi, V.; Marathe, P. K.; Nair, Sarala; Kolekar, R. V.; Chourasiya, G.; Kannan, S.

    2009-06-01

    CR-39 Solid State Nuclear Track Detecting foils (SSNTD), along with 1 mm thick polyethylene radiator, sealed in triple laminated pouches, are used for country wide Fast Neutron Personnel Monitoring in India. With the present system of processing by elevated temperature electrochemical etching (ETECE) and evaluation using automatic image analysis, only 16 foils are processed at a time and it is useful over the dose equivalent range 0.2 mSv to 10 mSv. It has been reported that, by processing CR-39 of good detection efficiency by chemical etching at elevated temperature, more numbers of foils can be processed simultaneously. In the present study, CR-39 foils from Pershore Moulding (UK) have been chemically etched using 7 N KOH under various conditions of temperature and etching durations and evaluated using high magnification microscope. The duration of chemical etching, has been optimized at a constant temperature of 60°C for chemical etching process. The characteristics of the chemically etched CR-39 foils are compared with the characteristics of the CR-39 foils processed by the existing system of ETECE and the detailed results are presented in the full text of the paper. It has been observed that by chemical etching process, the dose equivalent range of CR-39 foils can be extended above 60 mSv.

  17. Note: electrochemical etching of sharp iridium tips.

    Science.gov (United States)

    Lalanne, Jean-Benoît; Paul, William; Oliver, David; Grütter, Peter H

    2011-11-01

    We describe an etching procedure for the production of sharp iridium tips with apex radii of 15-70 nm, as determined by scanning electron microscopy, field ion microscopy, and field emission measurements. A coarse electrochemical etch followed by zone electropolishing is performed in a relatively harmless calcium chloride solution with high success rate.

  18. Etching of Niobium Sample Placed on Superconducting Radio Frequency Cavity Surface in Ar/CL2 Plasma

    Energy Technology Data Exchange (ETDEWEB)

    Janardan Upadhyay, Larry Phillips, Anne-Marie Valente

    2011-09-01

    Plasma based surface modification is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. It has been proven with flat samples that the bulk Niobium (Nb) removal rate and the surface roughness after the plasma etchings are equal to or better than wet etching processes. To optimize the plasma parameters, we are using a single cell cavity with 20 sample holders symmetrically distributed over the cell. These holders serve the purpose of diagnostic ports for the measurement of the plasma parameters and for the holding of the Nb sample to be etched. The plasma properties at RF (100 MHz) and MW (2.45 GHz) frequencies are being measured with the help of electrical and optical probes at different pressures and RF power levels inside of this cavity. The niobium coupons placed on several holders around the cell are being etched simultaneously. The etching results will be presented at this conference.

  19. Applications of total-etch adhesive bonding.

    Science.gov (United States)

    Strassler, Howard E

    2003-06-01

    The concept of total-etch adhesion for enamel and dentin is well accepted. Although new techniques with self-etching adhesives have been introduced, there needs to be more reported clinical trials before making a complete switch to these systems. Currently, the only adhesive systems with long-term data to support confidence and success with their clinical use are total-etch systems. Applications for using a total-etch adhesive bonding technique include sealants, orthodontic brackets, anterior composite resins, posterior composite resins, bonded dental silver amalgam, resin cementation with posts, all-metal, porcelain-metal, composite resin, and ceramic restorations, splinting, core foundations, and conservative treatment of the worn dentition. This article will review the concepts for clinical success with total-etch adhesion for a wide range of clinical applications.

  20. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Songkil; Henry, Mathias [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Fedorov, Andrei G., E-mail: agf@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Parker H. Petit Institute for Bioengineering and Bioscience, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2015-12-07

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon “halo” deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations.

  1. Localized etching of polymer films using an atmospheric pressure air microplasma jet

    Science.gov (United States)

    Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

    2015-01-01

    A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min-1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ.

  2. Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

    Science.gov (United States)

    Liao, Ying-Jie; Lou, Yan-Hui; Wang, Zhao-Kui; Liao, Liang-Sheng

    2014-11-01

    A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a suppression of the leak current in the current—voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.

  3. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    Directory of Open Access Journals (Sweden)

    Sabine Geerts

    2012-01-01

    interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1 and 2-step (ADSE Self-Etch adhesives.

  4. Determination of nuclear tracks parameters on sequentially etched PADC detectors

    Science.gov (United States)

    Horwacik, Tomasz; Bilski, Pawel; Koerner, Christine; Facius, Rainer; Berger, Thomas; Nowak, Tomasz; Reitz, Guenther; Olko, Pawel

    Polyallyl Diglycol Carbonate (PADC) detectors find many applications in radiation protection. One of them is the cosmic radiation dosimetry, where PADC detectors measure the linear energy transfer (LET) spectra of charged particles (from protons to heavy ions), supplementing TLD detectors in the role of passive dosemeter. Calibration exposures to ions of known LET are required to establish a relation between parameters of track observed on the detector and LET of particle creating this track. PADC TASTRAK nuclear track detectors were exposed to 12 C and 56 Fe ions of LET in H2 O between 10 and 544 keV/µm. The exposures took place at the Heavy Ion Medical Accelerator (HIMAC) in Chiba, Japan in the frame of the HIMAC research project "Space Radiation Dosimetry-Ground Based Verification of the MATROSHKA Facility" (20P-240). Detectors were etched in water solution of NaOH with three different temperatures and for various etching times to observe the appearance of etched tracks, the evolution of their parameters and the stability of the etching process. The applied etching times (and the solution's concentrations and temperatures) were: 48, 72, 96, 120 hours (6.25 N NaOH, 50 O C), 20, 40, 60, 80 hours (6.25 N NaOH, 60 O C) and 8, 12, 16, 20 hours (7N NaOH, 70 O C). The analysis of the detectors involved planimetric (2D) measurements of tracks' entrance ellipses and mechanical measurements of bulk layer thickness. Further track parameters, like angle of incidence, track length and etch rate ratio were then calculated. For certain tracks, results of planimetric measurements and calculations were also compared with results of optical track profile (3D) measurements, where not only the track's entrance ellipse but also the location of the track's tip could be directly measured. All these measurements have been performed with the 2D/3D measurement system at DLR. The collected data allow to create sets of V(LET in H2 O) calibration curves suitable for short, intermediate and

  5. The Effect of HF/NH4F Etching on the Morphology of Surface Fractures on Fused Silica

    Energy Technology Data Exchange (ETDEWEB)

    Wong, L; Suratwala, T; Feit, M D; Miller, P E; Steele, R A

    2008-04-03

    function of etch time. The initial removal rate for the ground surface was typically 3.5 x the bulk etch rate. The evolving morphology of ground surfaces during etching was simulated using an isotropic finite difference model. This model illustrates the importance that the initial distributions of fracture sizes and spatial locations have on the evolution of roughness and the rate at which material is removed during the etching process. The etching of ground surfaces can be used during optical fabrication to convert subsurface damage into surface roughness thereby reducing the time required to produce polished surfaces that are free of subsurface damage.

  6. Nanoparticle and nanosphere mask for etching of ITO nanostructures and their reflection properties

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Cigang; Deng, Ligang; Holder, Adam; Bailey, Louise R.; Proudfoot, Gary; Thomas, Owain; Gunn, Robert; Cooke, Mike [Oxford Instruments Plasma Technology, Bristol (United Kingdom); Leendertz, Caspar [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut fuer Silizium Photovoltaik, Berlin (Germany); Bergmann, Joachim [Leibniz Institute of Photonic Technology, Jena (Germany)

    2015-01-01

    Au nanoparticles and polystyrene nanospheres were used as mask for plasma etching of indium tin oxide (ITO) layer. By reactive ion etching (RIE) processes, the morphology of polystyrene nanospheres can be tuned through chemical or physical etching, and Au nanoparticle mask can result in ITO nanostructures with larger aspect ratio than nanosphere mask. During inductively coupled plasma (ICP) processes, Au nanoparticle mask was not affected by the thermal effect of plasma, whereas temperature of the substrate was essential to protect nanospheres from the damaging effect of plasma. Physical bombardment in the plasma can also modify the nanospheres. It was observed that under the same process conditions, the ratio of CH{sub 4} and H{sub 2} in the process gas can affect the etching rate of ITO without completely etching the nanospheres. The morphology of ITO nanostructures also depends on process conditions. The resulting ITO nanostructures show lower reflection in a spectral range of 400-1000 nm than c-Si and conventional antireflection layer of SiN{sub x} film. ITO nanostructures obtained after etching (scale bar = 200 nm). (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Preparation of Electrode Array by Electrochemical Etching Based on FEM

    Institute of Scientific and Technical Information of China (English)

    Minghuan WANG; Di ZHU; Lei WANG

    2008-01-01

    Process technology of multiple cylindrical micro-pins by wire-electrical discharge machining (wire-EDM) and electrochemical etching was presented.A row of rectangular micro-columns were machined by wire-EDM and then machined into cylindrical shape by electrochemical etching.However,the shape of the multiple electrodes and the consistent sizes of the electrodes row are not easy to be controlled.In the electrochemical process,the shape of the cathode electrode determines the current density distribution on the anode and so the forming of multiple electrodes.This paper proposes a finite element method (FEM) to accurately optimize the electrode profile.The microelectrodes row with uniformity diameters with size from hundreds micrometers to several decades could be fabricated,and mathematical model controlling the shape and diameter of multiple microelectrodes was provided.Furthermore,a good agreement between experimental and theoretical results was confirmed.

  8. Downstream oxygen etching of low dielectric polymers using a microwave plasma

    Science.gov (United States)

    Callahan, Russell Rosaire Austin

    As dictated by the International Technology Roadmap for Semiconductors, there is an immediate need to develop low dielectric materials for use in metalization schemes in integrated circuits. Low dielectric materials are needed in order to reduce resistance-capacitance time delays, cross-talk and power. This dissertation is focused on studying the etching characteristics of a family of low dielectric polymers, the parylenes. Three types of parylene are studied: parylene-N, parylene-C, and AF4. Parylene films on silicon substrates were etched in a downstream microwave oxygen plasma system. The goal was to characterize the chemical reactions that occurred on the parylene in an oxygen radical atmosphere. First, the effects of pressure and temperature on the etch characteristics of parylene-N were studied. X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy analyses were performed on the parylene films pre- and post-etch. It was determined that hydrogen abstraction and carbonyl formation are key steps during the etch process. Next, a model was generated to describe the reactive species concentrations throughout the reactor volume, including the generation of oxygen radicals in the plasma cavity, their transport to the parylene surface, and their reaction with the parylene. The predicted results were compared to experimental etch data. Good agreement between the model and experimental data was achieved when a model consisting of data from Bell, the Joint Institute for Laboratory Astrophysics and cross-sections published by Cosby and an overall reaction order of 0.5 is compared. Other models included cross-sections published by Phelps and Lieberman. In order to further understand the etching process, the two other parylenes, parylene-C and AF-4, were etched and analyzed. The etching characteristics as a function of temperature are reported. X-ray photoelectron and infrared spectroscopic analysis of these films is also reported. The apparent activation energy

  9. Nanoparticle-based etching of silicon surfaces

    Science.gov (United States)

    Branz, Howard; Duda, Anna; Ginley, David S.; Yost, Vernon; Meier, Daniel; Ward, James S.

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  10. Deep dry-etch of silica in a helicon plasma etcher for optical waveguide fabrication

    Science.gov (United States)

    Li, W. T.; Bulla, D. A. P.; Love, J.; Luther-Davies, B.; Charles, C.; Boswell, R.

    2005-01-01

    Dry-etch of SiO2 layers using a CF4 plasma in a helicon plasma etcher for optical waveguide fabrication has been studied. Al2O3 thin films, instead of the conventional materials, such as Cr or photoresist, were employed as the masking materials. The Al2O3 mask layer was obtained by periodically oxidizing the surface of an Al mask in an oxygen plasma during the breaks of the SiO2 etching process. A relatively high SiO2/Al2O3 etching selectivity of ~100:1, compared with a SiO2/Al selectivity of ~15:1, was achieved under certain plasma condition. Such a high etching selectivity greatly reduced the required Al mask thickness from over 500 nm down to ~100 nm for etching over 5-μm-thick silica, which make it very easy to obtain the mask patterns with near vertical and very smooth sidewalls. Accordingly, silica wavegudies with vertical sidewalls whose roughness was as low as 10 nm were achieved. In addition, the mechanism of the profile transformation from a mask to the etched waveguide was analyzed numerically; and it was found that the slope angle of the sidewalls of the mask patterns only needed to be larger than 50° for achieving vertical sidewalls of the waveguides, if the etching selectivity was increased to 100.

  11. Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride films.

    Science.gov (United States)

    Jung, Younghun; Baik, Kwang Hyeon; Mastro, Michael A; Hite, Jennifer K; Eddy, Charles R; Kim, Jihyun

    2014-08-14

    Wet chemical etching using hot KOH and H3PO4 solutions was performed on semipolar (11̄22) and nonpolar (11̄20) GaN films grown on sapphire substrates. An alternating KOH/H3PO4/KOH etch process was developed to control the orientation of the facets on the thin-film surface. The initial etch step in KOH produced c- and m-plane facets on the surface of both semipolar (11̄22) and nonpolar (11̄20) GaN thin-films. A second etch step in H3PO4 solution additionally exposed a (̄1̄12̄2) plane, which is chemically stable in H3PO4 solution. By repeating the chemical etch with KOH solution, the m-plane facets as seen in the original KOH etch step were recovered. The etching methods developed in our work can be used to control the surface morphologies of nonpolar and semipolar GaN-based optoelectronic devices such as light-emitting diodes and solar cells.

  12. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.

    Science.gov (United States)

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-04

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  13. Benefit of precise control of surface reaction by new patterning technique for small-contact etching with TiN hard mask

    Science.gov (United States)

    Tabata, Masahiro; Tsuji, Akihiro; Katsunuma, Takayuki; Honda, Masanobu

    2017-06-01

    We introduce state-of-the art small-contact etching by a new patterning technique using atomic layer etching (ALE) for sub-5 nm technology generation. In small-contact etching, SiO2 is etched by using a TiN hard mask with the progress of the miniaturization process. However, when applying the conventional method to small-contact etching with a TiN mask, etch stop is caused by excess deposition on the SiO2 film. From the results of surface analysis by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy-energy-dispersive X-ray spectroscopy (TEM-EDX), it is considered that the deposition is formed by the reaction of fluorocarbon (FC) plasma and TiN. To solve this problem, we have developed a quasi-ALE technique to improve the ALE process to make it more suitable for SiO2 etching. By adopting this technique to small-contact etching with a TiN hard mask, etch stop was significantly reduced. Quasi-ALE precisely controls the surface reaction by controlling the radical flux and ion flux independently. Therefore, the reaction of FC plasma and TiN leading to etch stop can be minimized. Quasi-ALE can resolve the etch-stop issue due to the TiN mask used in the conventional method.

  14. Production of Porous ZnSe by Electrochemical Etching Method

    Directory of Open Access Journals (Sweden)

    А.F. Dyadenchuk

    2013-10-01

    Full Text Available Here we describe the production features of a porous layer on the surface of n-type single-crystalline zinc selenide. The surface structure is investigated and the photomicrographs of porous layers of the treated ZnSe crystal are represented. Process of the mosaic structure formation depending on the etching time is considered. The value of the flat-band potential with respect to the used electrolyte is calculated.

  15. Room temperature inductively coupled plasma etching of InAs/InSb in BCl 3/Cl 2/Ar

    KAUST Repository

    Sun, Jian

    2012-10-01

    Inductively coupled plasma (ICP) etching of InAs and InSb at room temperature has been investigated using BCl 3/Cl 2/Ar plasma. Specifically, the etch rate and post-etching surface morphology were investigated as functions of the gas composition, ICP power, process pressure, and RF chuck power. An optimized process has been developed, yielding anisotropic etching and very smooth surfaces with roughnesses of 0.25 nm for InAs, and 0.57 nm for InSb, which is comparable with the surface of epi-ready polished wafers. The process provides moderate etching rates of 820 /min for InAs and 2800 /min for InSb, and the micro-masking effect is largely avoided. © 2012 Elsevier B.V. All rights reserved.

  16. Electroless epitaxial etching for semiconductor applications

    Science.gov (United States)

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  17. Overview of atomic layer etching in the semiconductor industry

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  18. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Science.gov (United States)

    Tamulevičius, Tomas; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-01

    We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6-12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet-visible light (UV-VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2-6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined processing employing aluminum mask resulted in nanocomposite material (DLC:Ag) micropatterns.

  19. Peculiarity of plasmachemical etching of silicon plate edges of photoelectric converters

    OpenAIRE

    Fedorovich O. A.; Kruglenko M. P.; Polozov B. P.

    2009-01-01

    Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edges of photo-electric converters are described. Dependences of silicon etching speed on a discharge current, magnetic field intensity, quantity of the process able surface area and gases composition are resulted. Recommendations on technological use of PCR in an industrial production of photo-electric converters (PEC) are given. The productivity of PCR, developed in INR, is higher then productiv...

  20. CHARACTERISATION OF THE ETCHING QUALITY IN MICRO-ELECTRO-MECHANICAL SYSTEMS BY THERMAL TRANSIENT METHODOLOGY

    OpenAIRE

    Szabo, P; Nemeth, B.; Rencz, M.; Courtois, B.

    2006-01-01

    Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/5920); International audience; Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as consequence of the differences in their manufacturing processes e.g. different etching times. We have made simulations examining how the etch...

  1. Nanostructural effect of acid-etching and fluoride application on human primary and permanent tooth enamels

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Youjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Choi, Samjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Department of Orthodontics, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Kim, So Jung [Department of Pediatric Dentistry, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Park, Hun-Kuk, E-mail: sigmoidus@khu.ac.kr [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Program of Medical Engineering, Kyung Hee University, Seoul (Korea, Republic of)

    2012-07-01

    This study examined the nanostructural effects of fluoride application and the acid-etching time with respect to the time elapsed after fluoride application on the primary and permanent tooth enamel layers using atomic force microscopy (AFM) and scanning electron microscopy (SEM). 192 non-carious teeth were assigned to sixteen experimental groups (n = 12) including primary (1 to 8) and permanent (9 to 16) teeth, based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. The APF pre-treatment led to a decrease in surface roughness in both the primary and permanent teeth. After the APF treatment, the roughness in both primary and permanent teeth increased with the time elapsed. An acid-etching time of 40 s led to increased nanostructural changes in the enamel surfaces compared to the conventional acid-etching time of 20 s. This acid-etching process led to a higher roughness changes in the primary teeth than in the permanent teeth. To obtain proper enamel adhesion of a sealant after APF pre-treatment, it is important to apply acid-etching two weeks after pre-treatment. In addition, the acid-etching time should be prolonged to apply etching more quickly than two weeks, regardless of the primary and permanent teeth. Highlights: Black-Right-Pointing-Pointer APF pre-treatment led to decreased surface roughness in the enamel. Black-Right-Pointing-Pointer After APF treatment, the more roughness increased with increasing time elapsed. Black-Right-Pointing-Pointer Acid-etching should be performed two weeks after fluoride application.

  2. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    Energy Technology Data Exchange (ETDEWEB)

    Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L [Complex Photonic Systems (COPS), MESA Institute for Nanotechnology and Department of Science and Technology, University of Twente, PO Box 217, NL-7500 AE Enschede (Netherlands); Jansen, Henri V [Transducers Science and Technology (TST), MESA Institute for Nanotechnology and Department of Electrical Engineering, Mathematics and Computer Science, University of Twente, PO Box 217, NL-7500 AE Enschede (Netherlands); Setija, Irwan D [ASML Netherlands B V, De Run 6501, NL-5504 DR Veldhoven (Netherlands)], E-mail: l.a.woldering@utwente.nl

    2008-04-09

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF{sub 6}, optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips.

  3. Freeze fracture and freeze etching.

    Science.gov (United States)

    Chandler, Douglas E; Sharp, William P

    2014-01-01

    Freeze fracture depends on the property of frozen tissues or cells, when cracked open, to split along the hydrophobic interior of membranes, thus revealing broad panoramas of membrane interior. These large panoramas reveal the three-dimensional contours of membranes making the methods well suited to studying changes in membrane architecture. Freshly split membrane faces are visualized by platinum or tungsten shadowing and carbon backing to form a replica that is then cleaned of tissue and imaged by TEM. Etching, i.e., removal of ice from the frozen fractured specimen by sublimation prior to shadowing, can also reveal the true surfaces of the membrane as well as the extracellular matrix and cytoskeletal networks that contact the membranes. Since the resolution of detail in the metal replicas formed is 1-2 nm, these methods can also be used to visualize macromolecules or macromolecular assemblies either in situ or displayed on a mica surface. These methods are available for either specimens that have been chemically fixed or specimens that have been rapidly frozen without chemical intervention.

  4. Effect of phosphoric acid etching on the shear bond strength of two self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Camila SABATINI

    2013-01-01

    Full Text Available Objective To evaluate the effect of optional phosphoric acid etching on the shear bond strength (SBS of two self-etch adhesives to enamel and dentin. Material and Methods Ninety-six bovine mandibular incisors were ground flat to obtain enamel and dentin substrates. A two-step self-etch adhesive (FL-Bond II and a one-step self-etch adhesive (BeautiBond were applied with and without a preliminary acid etching to both the enamel and dentin. The specimens were equally and randomly assigned to 4 groups per substrate (n=12 as follows: FL-Bond II etched; FL-Bond II un-etched; BeautiBond etched; BeautiBond un-etched. Composite cylinders (Filtek Z100 were bonded onto the treated tooth structure. The shear bond strength was evaluated after 24 hours of storage (37°C, 100% humidity with a testing machine (Ultra-tester at a speed of 1 mm/min. The data was analyzed using a two-way ANOVA and post-hoc Tukey's test with a significance level of p<0.05. A field emission scanning electron microscope was used for the failure mode analysis. Results Both adhesives evidenced a significant decrease in the dentin SBS with the use of an optional phosphoric acid-etching step (p<0.05. Preliminary phosphoric acid etching yielded significantly higher enamel SBS for FL-Bond II (p<0.05 only, but not for BeautiBond. FL-Bond II applied to un-etched dentin demonstrated the highest mean bond strength (37.7±3.2 MPa and BeautiBond applied to etched dentin showed the lowest mean bond strength (18.3±6.7 MPa among all tested groups (p<0.05. Conclusion The use of a preliminary acid-etching step with 37.5% phosphoric acid had a significant adverse effect on the dentin bond strength of the self-etch adhesives evaluated while providing improvement on the enamel bond strength only for FL-Bond II. This suggests that the potential benefit that may be derived from an additional etching step with phosphoric acid does not justify the risk of adversely affecting the bond strength to dentin.

  5. Nonhomogeneous surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air

    Science.gov (United States)

    Wang, Tao; Yang, Bin; Chen, Xiang; Wang, Xiaolin; Yang, Chunsheng; Liu, Jingquan

    2016-10-01

    Surface properties of parylene-C film etched by an atmospheric pressure He/O2 micro-plasma jet in ambient air were investigated. The morphologies and chemical compositions of the etched surface were analyzed by optical microscopy, SEM, EDS, XPS and ATR-FTIR. The microscopy and SEM images showed the etched surface was nonhomogeneous with six discernable ring patterns from the center to the outside domain, which were composed of (I) a central region; (II) an effective etching region, where almost all of the parylene-C film was removed by the plasma jet with only a little residual parylene-C being functionalized with carboxyl groups (Cdbnd O, Osbnd Cdbnd O-); (III) an inner etching boundary; (IV) a middle etching region, where the film surface was smooth and partially removed; (V) an outer etching boundary, where the surface was decorated with clusters of debris, and (VI) a pristine parylene-C film region. The analysis of the different morphologies and chemical compositions illustrated the different localized etching process in the distinct regions. Besides, the influence of O2 flow rate on the surface properties of the etched parylene-C film was also investigated. Higher volume of O2 tended to weaken the nonhomogeneous characteristics of the etched surface and improve the etched surface quality.

  6. Etch selectivity of a wet chemical formulation for premetal cleaning

    Science.gov (United States)

    Epton, Jeremy W.; Jarrett, Deborah L.; Doohan, Ian J.

    2001-04-01

    This paper examines the relative etching rates of doped and thermal silicon dioxide when using NSSL etchant, comprising of a mixture of ammonium fluoride, water and ammonium dihydrogen phosphate [(NH4)H2PO4] and investigates their dependence on both temperature and mixture composition. The possible reaction mechanism is discussed and compared with the known mechanism for standard buffered oxide etchants (BOE). The observed etch selectivity and mechanisms of BOE and NSSL are also compared with the behavior of a third chemical formulation, referred to as mixed oxide etchant, which comprises of ammonium fluoride (NH4F) solution, diammonium hydrogen phosphate [(NH4)2HPO4] and orthophosphoric acid (H3PO4). It is concluded that no major change in oxide selectivity is observed if either BOE or NSSL etchants are used in the metal pre-clean process.

  7. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  8. Dislocation Etching Solutions for Mercury Cadmium Selenide

    Science.gov (United States)

    2014-09-01

    manufacturer’s or trade names does not constitute an official endorsement or approval of the use thereof. Destroy this report when it is no longer...dislocation—thus enabling EPD measurement of Hg1-xCdxSe. 15. SUBJECT TERMS Mercury cadmium selenide, etch pits, dislocations, preferential etching...by the US Army Research Laboratory and was accomplished under Cooperative Agreement # W911NF-12-2-0019. vi

  9. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  10. Study on atomic layer etching of Si in inductively coupled Ar/Cl2 plasmas driven by tailored bias waveforms

    Science.gov (United States)

    Ma, Xiaoqin; Zhang, Saiqian; Dai, Zhongling; Wang, Younian

    2017-08-01

    Plasma atomic layer etching is proposed to attain layer-by-layer etching, as it has atomic-scale resolution, and can etch monolayer materials. In the etching process, ion energy and angular distributions (IEADs) bombarding the wafer placed on the substrate play a critical role in trench profile evolution, thus importantly flexibly controlling IEADs in the process. Tailored bias voltage waveform is an advisable method to modulate the IEADs effectively, and then improve the trench profile. In this paper, a multi-scale model, coupling the reaction chamber model, sheath model, and trench model, is used to research the effects of bias waveforms on the atomic layer etching of Si in Ar/Cl2 inductively coupled plasmas. Results show that different discharge parameters, such as pressure and radio-frequency power influence the trench evolution progress with bias waveforms synergistically. Tailored bias waveforms can provide nearly monoenergetic ions, thereby obtaining more anisotropic trench profile.

  11. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    Dry etching is a collective term used for controlled material removal by means of plasma generated ions. Dry etching includes several techniques, with reactive ion etching as one of the most used of its many derivatives. In this work inductively coupled plasma reactive ion etching has been applied...... beam etching in a boron trichloride plasma. The etch rates of sapphire in such a plasma can be up to a hundred times faster than rates in ion beam etching. The anisotropy of the etch can be controlled by changing the plasma conditions and fabrication of sloped sidewalls can be achieved. Reactive ion...... etching of polymers can be used for several purposes, such as polymer removal, surface properties alternation, or polymer structuring. For material removal any polymer can be etched in an oxygen plasma, including all the polymers used in this project, which include, SU-8, TOPAS®, PLLA, PCL, and PMMA...

  12. White spot lesions: Does etching really matter?

    Science.gov (United States)

    Abufarwa, Moufida; Voorhees, Robert D; Varanasi, Venu G; Campbell, Phillip M; Buschang, Peter H

    2017-08-01

    The clinical significance of acid etching prior to orthodontic bonding is controversial. In the present study, we evaluated the effect of 15 seconds of acid etching on enamel demineralization. Twenty-seven human molars were sectioned and assigned to two groups. Under standardized conditions, the enamel surfaces were imaged using FluoreCam to obtain baseline data. Group 1 was etched using 37% phosphoric acid for 15 seconds, rinsed with water, and then imaged again; group 2 was only rinsed with water. Water rinse was collected for calcium chemical analysis using inductively-coupled plasma auger electron spectrometry. Both groups were subjected to 9 days of pH cycling, after which final FluoreCam images were obtained. Group 1 showed a significant increase in lesion area (P=.012), decrease in light intensity (P=.009), and decrease in impact (P=.007) after acid etching. The amount of calcium that leached out over the 15 seconds was 14 ppm ±2.4 (0.35 mmol/L±0.06). Following pH cycling, there was no statistically-significant between-group difference in overall enamel demineralization. Initial demineralization caused by 15 seconds of acid etching does not increase enamel susceptibility to further demineralization. This suggests that acid etching does not increase the risk of developing white spot lesions during orthodontics. © 2017 John Wiley & Sons Australia, Ltd.

  13. Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

    2015-03-16

    A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

  14. Atomic-layer soft plasma etching of MoS2.

    Science.gov (United States)

    Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya Ken

    2016-01-27

    Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

  15. Characterisation of the Etching Quality in Micro-Electro-Mechanical Systems by Thermal Transient Methodology

    CERN Document Server

    Szabo, P; Rencz, M; Courtois, B

    2007-01-01

    Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as consequence of the differences in their manufacturing processes e.g. different etching times. We have made simulations examining how the etching quality reflects in the thermal behaviour of devices. These simulations predicted change in the thermal behaviour of MEMS structures having differences in their sacrificial layers. The theory was tested with measurements of similar MEMS devices prepared with different etching times. In the measurements we used the T3Ster thermal transient tester equipment. The results show that deviations in the devices, as consequence of the different etching times, result in different temperature elevations and manifest also as shift in time in the relevant temperature transient curves.

  16. Fine-tuning the etch depth profile via dynamic shielding of ion beam

    CERN Document Server

    Wu, Lixiang; Fu, Shaojun

    2016-01-01

    We introduce a method for finely adjusting the etch depth profile by dynamic shielding in the course of ion beam etching (IBE), which is crucial for the ultra-precision fabrication of large optics. We study the physical process of dynamic shielding and propose a parametric modeling method to quantitatively analyze the shielding effect on etch depths, or rather the shielding rate, where a piecewise Gaussian model is adopted to fit the shielding rate profile. We have conducted two experiments. In the experiment on parametric modeling of shielding rate profiles, its result shows that the shielding rate profile is significantly influenced by the rotary angle of the leaf. And the experimental result of fine-tuning the etch depth profile shows good agreement with the simulated result, which preliminarily verifies the feasibility of our method.

  17. Characterization of notched long-period fiber gratings: effects of periods, cladding thicknesses, and etching depths.

    Science.gov (United States)

    Chiang, Chia-Chin; Tseng, Chien-Chia

    2014-07-10

    This study proposes using an inductively coupled plasma etching process to fabricate notched long-period fiber grating (NLPFG) for sensor applications. The effects of the designed parameters (i.e., different fiber cladding thicknesses, grating periods, and etching depths) are studied to explore the characterization of NLPFG. The characterization as indicated by tests of the NLPF showed that the wavelength of NLPFG produced a redshift with decreases in cladding thickness. The drift rate of the wavelength following changes in thickness was -2.801  nm/μm. In addition, a redshift also was exhibited in the increased period, with a wavelength drift rate corresponding to the size of the period of 1.466  nm/μm. Moreover, the results showed that the transmission loss in the spectra increased with etching depth. The variation rate of transmission loss based on etching depth was -0.458  dB/μm.

  18. Micro-structured fiber Bragg gratings: optimization of the fabrication process.

    Science.gov (United States)

    Iadicicco, A; Campopiano, S; Paladino, D; Cutolo, A; Cusano, A

    2007-11-12

    This work has been devoted to present and demonstrate a novel approach for the fabrication of micro-structured fiber Bragg gratings (MSFBGs) with enhanced control of the geometric features and thus of the spectral properties of the final device. The investigated structure relies on the localized stripping of the cladding layer in a well defined region in the middle of the grating structure leading to the formation of a defect state in the spectral response. In order to fully explore the versatility of MSFBGs for sensing and communications applications, a technological assessment of the fabrication process aimed to provide high control of the geometrical features is required. To this aim, here, we demonstrate that the optimization of this device is possible by adopting a fabrication process based on polymeric coatings patterned by high resolution UV laser micromachining tools. The function of the polymeric coating is to act as mask for the HF based chemical etching process responsible for the cladding stripping. Whereas, UV laser micromachining provides a valuable method to accurately pattern the polymeric coating and thus obtain a selective stripping along the grating structure. Here, we experimentally demonstrate the potentiality of the proposed approach to realize reliable and cost efficient MSFBGs enabling the prototyping of advanced photonics devices based on this technology.

  19. Fabrication of superhydrophobic and oleophobic Al surfaces by chemical etching and surface fluorination

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hak-Jong; Shin, Ju-Hyeon; Choo, Soyoung; Ryu, Sang-Woo; Kim, Yang-Doo; Lee, Heon, E-mail: heonlee@korea.ac.kr

    2015-06-30

    Hierarchical Al surfaces were fabricated using three different kinds of alkaline-based chemical etching processes. The surface morphology changes to a needle-like microstructure or to nanoscale flakes on a microscale porous structure depending on the chemical solution used. These surfaces were characterized by field-emission scanning electron microscopy, X-ray diffraction analysis, X-ray photoelectron spectroscopy, and contact angle measurements. After the hydrophobic treatment, the etched Al surface shows non-wetting properties, exhibiting a static contact angle over 150° and a dynamic contact angle less than 5° for deionized water. Oleophobic properties for diiodomethane and N,N-dimethylformamide are exhibited by all etched Al surfaces. - Highlights: • This research fabricated and analyzed the etched Al surface via a simple wet etching process. • The morphology of Al surface is changed according to the presence of Zn ions. • The wettability of Al surface is controlled by roughness and surface treatment. • Superhydrophobicity and superoleophobicity are achieved on the wet etched Al mesh.

  20. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  1. Modeling of 2-dimensional and 3-dimensional etch profiles in high density plasma reactors

    Energy Technology Data Exchange (ETDEWEB)

    Hoekstra, R.J.; Kushner, M.J. [Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering; Sukharev, V. [LSI Logic Corp., Santa Clara, CA (United States)

    1997-12-31

    In order to model the plasma etching process from plasma generation to etch profile evolution, processes from the macroscopic reactor scale to the microscopic feature scale must be simulated. An integrated monte Carlo feature Profile Model (MCFPM) has been developed to examine the time evolution of etch profiles in high density plasma systems. By integrating the MCFPM with the Hybrid Plasma Equipment Model (HPEM), the authors are able to self-consistently determine the etch profiles for specific regions on the wafer in specific reactor geometry with specified parameters for power, chemistry, gas flow, etc. The latest improvements of the model include the effects of incoming particle angle and energy on reaction and reflection based on the results of molecular dynamics simulations. Increase the specular reflection of high energy particles leads to more vertical sidewalls and corner clearing but can also cause deformation of the bottom of the profile surface. For Chlorine etching of 2D and 3D profiles in polysilicon, the model results will be compared to experimental results in an inductively couple etching reactor. The changes due to radial location as well as sub wafer and superwafer topography be examined.

  2. A new generation of self-etching adhesives: comparison with traditional acid etch technique.

    Science.gov (United States)

    Holzmeier, Marcus; Schaubmayr, Martin; Dasch, Walter; Hirschfelder, Ursula

    2008-03-01

    The aim of this study was to determine the shear bond strength (SBS), etching pattern and depth, and debonding performance of several market-leading, self-etching (SE) adhesives primarily used in restorative dentistry (iBond, Clearfil S(3) Bond, Clearfil Protect Bond, AdheSE, XenoIII), two experimental self-etching adhesives (exp. Bond 1, exp. Bond 2) and one experimental self-etching cement (SE Zement) used with and without prior phosphoric acid-etching, and to compare them to an orthodontic self-etching product (Transbond Plus SE Primer) and to traditional acid-etch technique (Transbond XT Primer, phosphoric acid) All adhesives were applied on pumiced and embedded bovine incisors following the manufacturers' instructions. Then one bracket each (coated with Transbond XT composite) was bonded (n = 20). Transbond XT was polymerized for 20 s from the incisal and gingival sides using a halogen device positioned at a constant 5 mm from and a 45 degrees angle to the specimen. The specimens were stored in distilled water for 24 h at 37 degrees C before measuring SBS. The ARI (adhesive remnant index) for all specimens was determined from the sheared-off brackets of each. After conditioning, the surface texture was morphologically evaluated from scanning electron microscope (SEM) images, while the etching depth was determined using a confocal laser-scanning microscope (CLSM). All groups were tested for normal distribution and analyzed by applying ANOVA, Kruskal-Wallis or the t test. In addition, a Bonferroni correction was used. The median values of the SBS tests were: SE Zement 3.0 MPa, SE Zement preceded by phosphoric acid etching 11.2 MPa, experimental bond 1: 7.4 MPa, experimental bond 2: 5.6 MPa, iBond 8.1 MPa, Clearfil S(3) Bond 14.1 MPa, Clearfil Protect Bond 16.6 MPa, Clearfil SE Bond 15.9 MPa, AdheSE 16.0 MPa, XenoIII 16.1 MPa, Transbond SE Primer 20.7 MPa, acid-etching+Transbond XT Primer 21.0 MPa. With the exception of iBond, we observed no significant

  3. Reactive ion etching of Nb thin films for Nb/Al-AlO[sub x]/Nb Josephson tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Popova, K. (Dept. of Physics and Applied Physics, Univ. of Strathclyde, Glasgow (United Kingdom)); Lea, W.F. (Dept. of Physics and Applied Physics, Univ. of Strathclyde, Glasgow (United Kingdom)); Hutson, D. (Dept. of Physics and Applied Physics, Univ. of Strathclyde, Glasgow (United Kingdom)); Sydow, J.P. (Dept. of Physics and Applied Physics, Univ. of Strathclyde, Glasgow (United Kingdom)); Pegrum, C.M. (Dept. of Physics and Applied Physics, Univ. of Strathclyde, Glasgow (United Kingdom))

    1994-03-01

    Reactive ion etching of both Nb and Nb/Al-AlO[sub x]/Nb trilayer has been optimised for the fabrication of Josephson tunnel junctions. Niobium thin films deposited by magnetron sputtering on silicon wafers have been patterned by a process using CF[sub 4] + O[sub 2]. The effect of main process parameters on photoresist mask etch anisotropy has been demonstrated by scanning electron microscopy (SEM) observations, and the influence of gas composition, total pressure and discharge power on etch rates has been evaluated by response surface methodology. A face-centred cubed experimental design with 17 trials has been performed and the data processed using multiple regression analysis. Second-order polynomial expressions (response surfaces) for Nb and Si etch rates as functions of process parameters have been obtained. A reliable and repeatable Nb etch process has been defined in the range 100-270 mTorr total pressure, 50-70 W input power and 0-10% by flow of O[sub 2] added to the CF[sub 4]. Maximum Nb and Si etch rates were obtained with 7% O[sub 2] in the gas mixture, and SEM showed that vertical etch profiles were produced at 50 mTorr CF[sub 4] + 5%O[sub 2]. (orig.)

  4. Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon

    Science.gov (United States)

    Kong, Lingyu; Dasgupta, Binayak; Ren, Yi; Mohseni, Parsian K.; Hong, Minghui; Li, Xiuling; Chim, Wai Kin; Chiam, Sing Yang

    2016-11-01

    In this work, we investigate the transport processes governing the metal-assisted chemical etching (MacEtch) of silicon (Si). We show that in the oxidation of Si during the MacEtch process, the transport of the hole charges can be accomplished by the diffusion of metal ions. The oxidation of Si is subsequently governed by a redox reaction between the ions and Si. This represents a fundamentally different proposition in MacEtch whereby such transport is understood to occur through hole carrier conduction followed by hole injection into (or electron extraction from) Si. Consistent with the ion transport model introduced, we showed the possibility in the dynamic redistribution of the metal atoms that resulted in the formation of pores/cracks for catalyst thin films that are ≲30 nm thick. As such, the transport of the reagents and by-products are accomplished via these pores/cracks for the thin catalyst films. For thicker films, we show a saturation in the etch rate demonstrating a transport process that is dominated by diffusion via metal/Si boundaries. The new understanding in transport processes described in this work reconcile competing models in reagents/by-products transport, and also solution ions and thin film etching, which can form the foundation of future studies in the MacEtch process.

  5. Kinetics of faceting of crystals in growth, etching, and equilibrium

    Science.gov (United States)

    Vlachos, D. G.; Schmidt, L. D.; Aris, R.

    1993-03-01

    The faceting of crystals in equilibrium with the gas phase and also during crystal growth and etching conditions is studied using the Monte Carlo method. The dynamics of the transformation of unstable crystallographic orientations into hill and valley structures and the spatial patterns that develop are examined as functions of surface temperature, crystallographic orientation, and strength of interatomic potential for two transport processes: adsorption-desorption and surface diffusion. The results are compared with the continuum theory for facet formation. Thermodynamically unstable orientations break into hill and valley structures, and faceting exhibits three time regimes: disordering, facet nucleation, and coarsening of small facets to large facets. Faceting is accelerated as temperature increases, but thermal roughening can occur at high temperatures. Surface diffusion is the dominant mechanism at short times and small facets but adsorption-desorption becomes important at long times and large facets. Growth and etching promote faceting for conditions close to equilibrium but induce kinetic roughening for conditions far from equilibrium. Simultaneous irreversible growth and etching conditions with fast surface diffusion result in enhanced faceting.

  6. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  7. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  8. Effect of pre-etching enamel on fatigue of self-etch adhesive bonds

    NARCIS (Netherlands)

    Erickson, R.L.; de Gee, A.J.; Feilzer, A.J.

    2008-01-01

    Objective. A previous study found that the shear bond strength (SBS) to bovine enamel for the self-etching adhesive Adper Prompt-L-Pop (PLP) was 75% of that found with the etch-and-rinse material SingleBond, while the comparative value for the shear fatigue limit (SFL) was only 58% at 10(5) load

  9. Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

    DEFF Research Database (Denmark)

    Ou, Yiyu; Aijaz, Imran; Jokubavicius, Valdas

    2013-01-01

    An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process. The infl......An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process...... study presents a considerable omnidirectional luminescence enhancement....

  10. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly and wet chemical etching.

    Science.gov (United States)

    Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong

    2013-08-23

    Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.

  11. 非晶铟镓锌氧化物薄膜晶体管关键工艺研究%Key Process Research of Indium Gallium Zinc Oxide Thin Film Transistor with Etch Stop Layer

    Institute of Scientific and Technical Information of China (English)

    高锦成; 李正亮; 曹占锋; 姚琪; 关峰; 惠官宝

    2016-01-01

    为优化金属氧化物薄膜晶体管( IGZO-TFT)的特性,采用射频磁控溅射法沉积IGZO薄膜作为半导体活性层,制备出具有刻蚀阻挡层( Etch stop layer ,ESL)结构的IGZO TFT,在2.5 G试验线上研究了IGZO沉积过程中O2浓度、IGZO沉积后N2 O等离子体处理、ESL的制备温度和ESL沉积过程中N2 O/SiH4的比例等关键工艺条件对IGZO TFT的阈值电压( Vth )的影响。实验结果表明:IGZO沉积过程中O2浓度的增加、IGZO沉积后N2 O等离子体处理和ESL制备温度的降低会导致IGZO TFT的Vth正偏移。%In order to improve the performance of Indium Gallium Zinc Oxide Thin Film Transistor , IGZO-TFT with etch-stop layer was prepared in 2 .5 G experimental line .The effects of O 2 concentration during IGZO deposition , N2 O plasma treatment , the temperature of ESL deposition and the N 2 O/SiH4 ratio on the IGZO TFT Vth were systemically studied .The results show that the Vth would shift to positive position as the increasing of O 2 concentration , N2 O plasma treatment , and the decreasing of ESL deposition temperature .

  12. Silver ion mediated shape control of platinum nanoparticles: Removal of silver by selective etching leads to increased catalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Grass, Michael E.; Yue, Yao; Habas, Susan E.; Rioux, Robert M.; Teall, Chelsea I.; Somorjai, G.A.

    2008-01-09

    A procedure has been developed for the selective etching of Ag from Pt nanoparticles of well-defined shape, resulting in the formation of elementally-pure Pt cubes, cuboctahedra, or octahedra, with a largest vertex-to-vertex distance of {approx}9.5 nm from Ag-modified Pt nanoparticles. A nitric acid etching process was applied Pt nanoparticles supported on mesoporous silica, as well as nanoparticles dispersed in aqueous solution. The characterization of the silica-supported particles by XRD, TEM, and N{sub 2} adsorption measurements demonstrated that the structure of the nanoparticles and the mesoporous support remained conserved during etching in concentrated nitric acid. Both elemental analysis and ethylene hydrogenation indicated etching of Ag is only effective when [HNO{sub 3}] {ge} 7 M; below this concentration, the removal of Ag is only {approx}10%. Ethylene hydrogenation activity increased by four orders of magnitude after the etching of Pt octahedra that contained the highest fraction of silver. High-resolution transmission electron microscopy of the unsupported particles after etching demonstrated that etching does not alter the surface structure of the Pt nanoparticles. High [HNO{sub 3}] led to the decomposition of the capping agent, polyvinylpyrollidone (PVP); infrared spectroscopy confirmed that many decomposition products were present on the surface during etching, including carbon monoxide.

  13. Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching

    Directory of Open Access Journals (Sweden)

    Yunata Ersyzario Edo

    2015-01-01

    Full Text Available Diamond-Like Carbon (DLC and Chemical Vapor Deposition (CVD-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS. Micro-texturing into these hard coated molds and dies provides a productive tool to duplicate the original mother micro-patterns onto various work materials and to construct any tailored micro-textures for sensors and actuators. In the present paper, the high density oxygen plasma etching method is utilized to make micro-line and micro-groove patterns onto the DLC and diamond coatings. Our developing oxygen plasma etching system is introduced together with characterization on the plasma state during etching. In this quantitative plasma diagnosis, both the population of activated species and the electron and ion densities are identified through the emissive light spectroscopy and the Langmuir probe method. In addition, the on-line monitoring of the plasmas helps to describe the etching process. DLC coated WC (Co specimen is first employed to describe the etching mechanism by the present method. Chemical Vapor Deposition (CVD diamond coated WC (Co is also employed to demonstrate the reliable capacity of the present high density oxygen plasma etching. This oxygen plasma etching performance is discussed by comparison of the etching rates.

  14. Anisotropic etching on Si{1 1 0}: experiment and simulation for the formation of microstructures with convex corners

    Science.gov (United States)

    Pal, Prem; Gosalvez, Miguel A.; Sato, Kazuo; Hida, H.; Xing, Yan

    2014-12-01

    We combine experiment, theory and simulation to design and fabricate 3D structures with protected edges and corners on Si{1 1 0} using anisotropic wet chemical etching in 25 wt% tetramethylammonium hydroxide (TMAH) at 71 °C. In order to protect the convex corners formed by and directions, two methods are considered, namely, corner compensation and two-step etching. The mask design methodology for corner compensation is explained for various microstructures whose edges are aligned along different directions. The detailed geometry of each compensation pattern is shown to depend on the desired etch depth. The two-step wet etching process is explored in order to realize improved sharp convex corners. Using the same etchant concentration and temperature, the second etching is carried out after mask inversion from silicon nitride (Si3N4) to silicon dioxide (SiO2), obtained by local oxidation of silicon (LOCOS) followed by nitride etching. Based on the use of the continuous cellular automaton (CCA), the simulation results for both corner undercutting and two-step etching show that the CCA is suitable for the analysis and prediction of anisotropic etching on Si{1 1 0} wafers.

  15. Anisotropic etching of monocrystalline silicon under subcritical conditions

    Science.gov (United States)

    Gonzalez-Pereyra, Nestor Gabriel

    Sub- and supercritical fluids remain an underexploited resource for materials processing. Around its critical point a common compound such as water behaves like a different substance exhibiting changes in its properties that modify its behavior as a solvent and unlock reaction paths not viable in other conditions. In the subcritical region water's properties can be directed by controlling temperature and pressure. Water and silicon are two of the most abundant, versatile, environmentally non-harmful, and simplest substances on Earth. They are among the most researched and best-known substances. Both are ubiquitous and essential for present-day world. Silicon is fundamental in semiconductor fabrication, microelectromechanical systems, and photovoltaic cells. Wet etching of silicon is a fabrication strategy shared by these three applications. Processing of silicon requires large amounts of water, often involving dangerous and environmentally hazardous chemicals. Yet, minimal knowledge is available on the ways high temperature water interacts with crystalline silicon. The purpose of this project is to identify and implement a method for the modification of monocrystalline silicon surfaces with three important characteristics: 1) requires minimal amounts of added chemicals, 2) controllability of morphological features formed, 3) reduced processing time. This will be accomplished by subjecting crystalline silicon to diluted alkaline solutions working in the subcritical region of water. This approach allows for variations on surface morphologies and etching rates by adapting the reactions conditions, with focus on composition and temperature of the solutions used. The work reported discusses the techniques used for producing surfaces with a variety of morphologies that ultimately allowed to create patterns and textures on silicon wafers, using highly diluted alkaline solutions that can be used for photovoltaic applications. These morphologies were created with a

  16. Restoration of obliterated engraved marks on steel surfaces by chemical etching reagent.

    Science.gov (United States)

    Song, Qingfang

    2015-05-01

    Chemical etching technique is widely used for restoration of obliterated engraved marks on steel surface in the field of public security. The consumed thickness of steel surface during restoration process is considered as a major criterion for evaluating the efficiency of the chemical etching reagent. The thinner the consumed thickness, the higher the restoration efficiency. According to chemical principles, maintaining the continuous oxidative capabilities of etching reagents and increasing the kinetic rate difference of the reaction between the engraved and non-engraved area with the chemical etching reagent can effectively reduce the consumed steel thickness. The study employed steel surface from the engine case of motorcycle and the car frame of automobile. The chemical etching reagents are composed of nitric acid as the oxidizer, hydrofluoric acid as the coordination agent and mixed with glacial acetic acid or acetone as the solvents. Based on the performance evaluation of three different etching reagents, the one composed of HNO3, HF and acetone gave the best result.

  17. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

    Energy Technology Data Exchange (ETDEWEB)

    Aureau, D., E-mail: damien.aureau@chimie.uvsq.fr [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Chaghi, R.; Gerard, I. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Sik, H.; Fleury, J. [Sagem Defense Sécurité, 72-74, rue de la tour Billy, 95101, Argenteuil Cedex (France); Etcheberry, A. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France)

    2013-07-01

    This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br{sub 2} and H{sub 2}O{sub 2} and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III–V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr–Br{sub 2}:H{sub 2}O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H{sub 3}PO{sub 4}–H{sub 2}O{sub 2}:H{sub 2}O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction.

  18. Triple-phase boundary and power density enhancement in thin solid oxide fuel cells by controlled etching of the nickel anode.

    Science.gov (United States)

    Ebrahim, Rabi; Yeleuov, Mukhtar; Issova, Ainur; Tokmoldin, Serekbol; Ignatiev, Alex

    2014-01-01

    Fabrication of microporous structures for the anode of a thin film solid oxide fuel cell (SOFC(s)) using controlled etching process has led us to increased power density and increased cell robustness. Micropores were etched in the nickel anode by both wet and electrochemical etching processes. The samples etched electrochemically showed incomplete etching of the nickel leaving linked nickel islands inside the pores. Samples which were wet- etched showed clean pores with no nickel island residues. Moreover, the sample with linked nickel islands in the anode pores showed higher output power density as compared to the sample with clean pores. This enhancement is related to the enlargement of the surface of contact between the fuel-anode-electrolyte (the triple-phase boundary).

  19. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  20. Facet selective etching of Au microcrystallites

    Institute of Scientific and Technical Information of China (English)

    Gangaiah Mettela and Giridhar U. Kulkarni

    2015-01-01

    High-symmetry crystals exhibit isotropic properties. Inducing anisotropy, e.g., by facet selective etching, is considered implausible in face-centered cubic (FCC) metals, particularly gold, which, in addition to being an FCC, is noble. We report for the first time the facet selective etching of Au microcrystals obtained in the form of cuboctahedra and pentagonal rods from the thermolysis of a gold- organic precursor. The selective etching of {111} and {100} facets was achieved using a capping method in which tetraoctylammonium cations selectively cap the {111} facets while Br- ions protect the {100} facets. The exposed facets are oxidized by O2/C1-, yielding a variety of interesting geometries. The facet selective etching of the Au microcrystallites is governed only by the nature of the facets; the geometry of the microcystallite does not appear to play a significant role. The etched surfaces appear rough, but a closer examination reveals well-defined corrugations that are indexable to high hkl values. Such surfaces exhibit enhanced Raman activity.

  1. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  2. The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface

    OpenAIRE

    Lyamkina AA; Dmitriev DV; Galitsyn Yu; Kesler VG; Moshchenko SP; Toropov AI

    2010-01-01

    Abstract In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the droplet formation that strongly influences subsequent nanohole etching. To investigate the etching and intermixing processes, we offer a new method of wetting angle analysis. The aspect ratio that is defined as the ratio of the height ...

  3. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto (Finland); Department of Physics, University of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae,Finland (Finland); Department of Micro and Nanosciences, School of Electrical Engineering, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  4. Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

    Science.gov (United States)

    Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

    2014-11-01

    We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

  5. Single beam determination of porosity and etch rate in situ during etching of porous silicon

    Science.gov (United States)

    Foss, S. E.; Kan, P. Y. Y.; Finstad, T. G.

    2005-06-01

    A laser reflection method has been developed and tested for analyzing the etching of porous silicon (PS) films. It allows in situ measurement and analysis of the time dependency of the etch rate, the thickness, the average porosity, the porosity profile, and the interface roughness. The interaction of an infrared laser beam with a layered system consisting of a PS layer and a substrate during etching results in interferences in the reflected beam which is analyzed by the short-time Fourier transform. This method is used for analysis of samples prepared with etching solutions containing different concentrations of HF and glycerol and at different current densities and temperatures. Variations in the etch rate and porosity during etching are observed, which are important effects to account for when optical elements in PS are made. The method enables feedback control of the etching so that PS films with a well-controlled porosity are obtainable. By using different beam diameters it is possible to probe interface roughness at different length scales. Obtained porosity, thickness, and roughness values are in agreement with values measured with standard methods.

  6. Oxygen plasma etching of silver-incorporated diamond-like carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Marciano, F.R., E-mail: fernanda@las.inpe.b [Instituto Nacional de Pesquisas Espaciais (INPE), Laboratorio Associado de Sensores e Materiais (LAS), Av. dos Astronautas 1758, Sao Jose dos Campos, 12227-010, SP (Brazil); Instituto Tecnologico de Aeronautica (ITA), Centro Tecnico Aeroespacial (CTA), Pca. Marechal Eduardo Gomes, 50-Sao Jose dos Campos, 12228-900, SP (Brazil); Bonetti, L.F. [Clorovale Diamantes Industria e Comercio Ltda, Estr. do Torrao de Ouro, 500-Sao Jose dos Campos, 12229-390, SP (Brazil); Pessoa, R.S.; Massi, M. [Instituto Tecnologico de Aeronautica (ITA), Centro Tecnico Aeroespacial (CTA), Pca. Marechal Eduardo Gomes, 50-Sao Jose dos Campos, 12228-900, SP (Brazil); Santos, L.V.; Trava-Airoldi, V.J. [Instituto Nacional de Pesquisas Espaciais (INPE), Laboratorio Associado de Sensores e Materiais (LAS), Av. dos Astronautas 1758, Sao Jose dos Campos, 12227-010, SP (Brazil)

    2009-08-03

    Diamond-like carbon (DLC) film as a solid lubricant coating represents an important area of investigation related to space devices. The environment for such devices involves high vacuum and high concentration of atomic oxygen. The purpose of this paper is to study the behavior of silver-incorporated DLC thin films against oxygen plasma etching. Silver nanoparticles were produced through an electrochemical process and incorporated into DLC bulk during the deposition process using plasma enhanced chemical vapor deposition technique. The presence of silver does not affect significantly DLC quality and reduces by more than 50% the oxygen plasma etching. Our results demonstrated that silver nanoparticles protect DLC films against etching process, which may increase their lifetime in low earth orbit environment.

  7. Anisotropic etching of platinum electrodes at the onset of cathodic corrosion.

    Science.gov (United States)

    Hersbach, Thomas J P; Yanson, Alexei I; Koper, Marc T M

    2016-08-24

    Cathodic corrosion is a process that etches metal electrodes under cathodic polarization. This process is presumed to occur through anionic metallic reaction intermediates, but the exact nature of these intermediates and the onset potential of their formation is unknown. Here we determine the onset potential of cathodic corrosion on platinum electrodes. Electrodes are characterized electrochemically before and after cathodic polarization in 10 M sodium hydroxide, revealing that changes in the electrode surface start at an electrode potential of -1.3 V versus the normal hydrogen electrode. The value of this onset potential rules out previous hypotheses regarding the nature of cathodic corrosion. Scanning electron microscopy shows the formation of well-defined etch pits with a specific orientation, which match the voltammetric data and indicate a remarkable anisotropy in the cathodic etching process, favouring the creation of (100) sites. Such anisotropy is hypothesized to be due to surface charge-induced adsorption of electrolyte cations.

  8. Fabrication of quantum wires by in-situ ion etching and MBE overgrowth

    Science.gov (United States)

    Heyn, Ch; Klein, C.; Kramp, S.; Beyer, S.; Günther, S.; Heitmann, D.; Hansen, W.

    2001-07-01

    We fabricate GaAs quantum wires (QW) that are completely embedded in epitaxial material. Here we report about an in-vacuo fabrication process, in which an ex-situ pre-patterned GaAlAs/GaAs heterostructure is in-situ etched and subsequently transferred under ultra high vacuum conditions into the growth chamber for epitaxial overgrowth. The in-situ etching step involves a chemical assisted ion beam etching with subsequent chemical gas etching. The aim of our investigations is to optimize the in-vacuo process for the reduction of interface states between the etched and overgrown material. We have studied structural properties of such processed samples with cross-sectional scanning-electron microscopy and transmission-electron microscopy. The optical and electronic properties of overgrown QW are investigated with magneto-transport measurements and far-infrared transmission spectroscopy. Overgrown QW show in comparison to conventional QW without overgrowth clearly increased carrier densities and a reduced depletion zone at the QW side-walls. These results indicate the successful reduction of surface states and establish the potential of the suggested in-situ technique for the fabrication of quantum structures.

  9. Laser-induced back-side etching with liquid and the solid hydrocarbon absorber films of different thicknesses

    Science.gov (United States)

    Ehrhardt, M.; Lorenz, P.; Yunxiang, P.; Bayer, L.; Han, B.; Zimmer, K.

    2017-04-01

    Laser-induced backside wet and dry etching (LIBWE and LIBDE) are methods for high-quality surface patterning of transparent dielectrics that making use of an additional absorber material attached to the rear side that is ablated in a confined configuration. Due to the manifold of the involved processes, the mechanism of the etching process and the parameter influence on the material removal process are multifaceted and not fully understood yet. In the present paper, we investigate the influence of the confinement to the backside etching process by studying the impact of the thickness of the attached liquid or solid absorber within a range of 12-125 and 0.2-11.7 μm, respectively. It was found that for the liquid and solid absorbers, the etching rate increases with the thickness of the absorber layer and saturates exceeding a certain value, which depends on the used laser fluence. Moreover, the incubation of etching depends on the absorber thickness. The comparison of the etching results of a similar thickness of the liquid and the solid absorber layers shows that the phase of the absorber (liquid or solid) does not influence the back-side etching process. Time-resolved shadowgraph images of the process indicate that with higher absorber layer thickness, the interaction time and strength of the laser-induced processes at the sample surface increase. The results suggest that confinement of the rear side attached absorber ablation influences the impact of the laser-induced secondary processes to the strength of the material modifications and, therefore, the etching rate.

  10. Selective emitter using a screen printed etch barrier in crystalline silicon solar cell.

    Science.gov (United States)

    Song, Kyuwan; Kim, Bonggi; Lee, Hoongjoo; Lee, Youn-Jung; Park, Cheolmin; Balaji, Nagarajan; Ju, Minkyu; Choi, Jaewoo; Yi, Junsin

    2012-07-23

    The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant concentration, and etching time have been optimized for the process, which is controllable as well as fast. The acid barrier formed by screen printing was etched with HF and HNO3 (1:200) solution for 15 s, resulting in high sheet contact resistance of 90 Ω/sq. Doping concentrations of the electrode contact portion were 2 × 1021 cm-3 in the low sheet resistance (Rs) region and 7 × 1019 cm-3 in the high Rs region. Solar cells of 12.5 × 12.5 cm2 in dimensions with a wet etch back selective emitter Jsc of 37 mAcm-2, open circuit voltage (Voc) of 638.3 mV and efficiency of 18.13% were fabricated. The result showed an improvement of about 13 mV on Voc compared to those of the reference solar cell fabricated with the reactive-ion etching back selective emitter and with Jsc of 36.90 mAcm-2, Voc of 625.7 mV, and efficiency of 17.60%.

  11. Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

    Science.gov (United States)

    Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

    2017-10-01

    Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

  12. Fabricating nanostructures through a combination of nano-oxidation and wet etching on silicon wafers with different surface conditions.

    Science.gov (United States)

    Huang, Jen-Ching

    2012-01-01

    This study investigates the surface conditions of silicon wafers with native oxide layers (NOL) or hydrogen passivated layers (HPL) and how they influence the processes of nano-oxidation and wet etching. We also explore the combination of nano-oxidation and wet etching processes to produce nanostructures. Experimental results reveal that the surface conditions of silicon wafers have a considerable impact on the results of nano-oxidation when combined with wet etching. The height and width of oxides on NOL samples exceeded the dimensions of oxides on HPL samples, and this difference became increasingly evident with an increase in applied bias voltage. The height of oxidized nanolines on the HPL sample increased after wet etching; however, the width of the lines increased only marginally. After wet etching, the height and width of oxides on the NOL were more than two times greater than those on the HPL. Increasing the applied bias voltage during nano-oxidation on NOL samples increased both the height and width of the oxides. After wet etching however, the increase in bias voltage appeared to have little effect on the height of oxidized nanolines, but the width of oxidized lines increased. This study also discovered that the use of higher applied bias voltages on NOL samples followed by wet etching results in nanostructures with a section profile closely resembling a curved surface. The use of this technique enabled researchers to create molds in the shape of a silicon nanolens array and an elegantly shaped nanoscale complex structures mold.

  13. Dislocation in heteroepitaxial diamond visualized by hydrogen plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, K.; Kodama, H. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan); Suzuki, K. [TOPLAS ENGINEERING Co., Ltd., Chofu, Tokyo 182-0006 (Japan); Sawabe, A. [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Sagamihara 229-0206 (Japan)

    2016-02-01

    The classification of etch pits formed by hydrogen plasma etching on heteroepitaxial diamond has been done by cross-sectional transmission electron microscope (TEM). We demonstrated that the origin of etch pit was mainly [001] threading dislocation. From invisibility criterion of dislocation contrast in TEM observation, this dislocation was identified as edge and 45° mixed dislocation. The correlation between dislocation types and etch pit shape was discussed. - Highlights: • The etch pits formed by plasma etching on heteroepitaxial diamond have been clarified by TEM. • The origin of etch pit was mainly [001] threading dislocation. • These dislocations were identified as edge and 45° mixed type. • The correlation between dislocation types and etch pit shape.

  14. Irregular shaping of polystyrene nanosphere array by plasma etching

    National Research Council Canada - National Science Library

    Luo, Hao; Liu, Tingting; Ma, Jun; Wang, Wei; Li, Heng; Wang, Pengwei; Bai, Jintao; Jing, Guangyin

    2013-01-01

    .... Here, by plasma etching, the controllable tailoring of the nanosphere is realized and its morphology dependence on the initial shape, microscopic roughness, and the etching conditions is investigated quantitatively...

  15. Effect of enamel etching time on roughness and bond strength

    National Research Council Canada - National Science Library

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra...

  16. Electrochemical etching of sharp tips for STM reveals singularity

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Oddershede, Lene

    2002-01-01

    Electrochemical etching of metal wires is widely used to produce atomically sharp tips for use in scanning tunneling microscopy (STM). In this letter we uncover the existence of a finite-time singularity in the process: Several of the physical parameters describing the system exhibit scaling...... towards and away from a particular singular point in time, exactly the time at which the wire breaks. The obtained scaling exponents coincide with exponents reported from other singular dynamical systems. The results also provide knowledge of how to control STM tip properties on the nano-scale....

  17. TrackEtching - A Java based code for etched track profile calculations in SSNTDs

    Science.gov (United States)

    Muraleedhara Varier, K.; Sankar, V.; Gangadathan, M. P.

    2017-09-01

    A java code incorporating a user friendly GUI has been developed to calculate the parameters of chemically etched track profiles of ion-irradiated solid state nuclear track detectors. Huygen's construction of wavefronts based on secondary wavelets has been used to numerically calculate the etched track profile as a function of the etching time. Provision for normal incidence and oblique incidence on the detector surface has been incorporated. Results in typical cases are presented and compared with experimental data. Different expressions for the variation of track etch rate as a function of the ion energy have been utilized. The best set of values of the parameters in the expressions can be obtained by comparing with available experimental data. Critical angle for track development can also be calculated using the present code.

  18. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (p<0.001) of bond strength with surface roughness of enamel. Conclusion All groups might show clinically

  19. Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

    Science.gov (United States)

    Al'zhanova, A.; Dauletbekova, A.; Komarov, F.; Vlasukova, L.; Yuvchenko, V.; Akilbekov, A.; Zdorovets, M.

    2016-05-01

    The process of latent track etching in SiO2/Si structures irradiated with 40Ar (38 MeV), 84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2.

  20. Preparing superhydrophobic copper surfaces with rose petal or lotus leaf property using a simple etching approach

    Science.gov (United States)

    Talesh Bahrami, H. R.; Ahmadi, B.; Saffari, H.

    2017-05-01

    A facile chemical etching process is developed to fabricate superhydrophobic copper surfaces. In the first step, cleaned copper surfaces immersed in ferric chloride (FeCl3) solutions with specific concentrations for different times. Etched surfaces exhibit the maximum contact angle of 140°. They have large sliding angle and water droplets stuck to the surface even if they were turned upside down which is well-known as rose petal effect. After stearic acid modification of etched surfaces, their contact angle slightly increased to above 150° and sliding angle decreased to smaller than 10° in some cases, which is same as lotus plant leaves property against water. Inspecting SEM images of etched surfaces reveals that many micro-nano structures forming blossom like buildings with curved petals of nanoscale thicknesses are formed. The micro-nano structures sizes and shapes affecting surface hydrophobicity are regulated by controlling reaction times and etchant solution concentrations. X-ray diffraction (XRD) analysis is done on a sample before and after of the etching process where patterns indicate that the same compositions present on the sample.

  1. Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

    Science.gov (United States)

    Kubis, Michael; Wise, Rich; Reijnen, Liesbeth; Viatkina, Katja; Jaenen, Patrick; Luca, Melisa; Mernier, Guillaume; Chahine, Charlotte; Hellin, David; Kam, Benjamin; Sobieski, Daniel; Vertommen, Johan; Mulkens, Jan; Dusa, Mircea; Dixit, Girish; Shamma, Nader; Leray, Philippe

    2016-03-01

    With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

  2. General fabrication of ordered nanocone arrays by one-step selective plasma etching.

    Science.gov (United States)

    Wang, Qiang; Tian, Zhaoshuo; Li, Yunlong; Tian, Shibing; Li, Yunming; Ren, Shoutian; Gu, Changzhi; Li, Junjie

    2014-03-21

    One-step selective direct current (DC) plasma etching technology is employed to fabricate large-area well-aligned nanocone arrays on various functional materials including semiconductor, insulator and metal. The cones have nanoscale apexes (∼2 nm) with high aspect ratios, which were achieved by a selective plasma etching process using only CH4 and H2 in a bias-assisted hot filament chemical vapor deposition (HFCVD) system without any masked process. The CH(3)(+) ions play a major role to etch the roughened surface into a conical structure under the auxiliary of H(+) ions. Randomly formed nano-carbon may act as an original mask on the smooth surface to initiate the following selective ions sputtering. Physical impinging of energetic ions onto the concave regions is predominant in comparison with the etching of convex parts on the surface, which is identified as the key mechanism for the formation of conical nanostructures. This one-step maskless plasma etching technology enables the universal formation of uniform nanocone structures on versatile substrates for many promising applications.

  3. Modeling of etch profile evolution including wafer charging effects using self consistent ion fluxes

    Energy Technology Data Exchange (ETDEWEB)

    Hoekstra, R.J.; Kushner, M.J. [Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering

    1996-12-31

    As high density plasma reactors become more predominate in industry, the need has intensified for computer aided design tools which address both equipment issues such as ion flux uniformity onto the water and process issues such etch feature profile evolution. A hierarchy of models has been developed to address these issues with the goal of producing a comprehensive plasma processing design capability. The Hybrid Plasma Equipment Model (HPEM) produces ion and neutral densities, and electric fields in the reactor. The Plasma Chemistry Monte Carlo Model (PCMC) determines the angular and energy distributions of ion and neutral fluxes to the wafer using species source functions, time dependent bulk electric fields, and sheath potentials from the HPEM. These fluxes are then used by the Monte Carlo Feature Profile Model (MCFP) to determine the time evolution of etch feature profiles. Using this hierarchy, the effects of physical modifications of the reactor, such as changing wafer clamps or electrode structures, on etch profiles can be evaluated. The effects of wafer charging on feature evolution are examined by calculating the fields produced by the charge deposited by ions and electrons within the features. The effect of radial variations and nonuniformity in angular and energy distribution of the reactive fluxes on feature profiles and feature charging will be discussed for p-Si etching in inductively-coupled plasma (ICP) sustained in chlorine gas mixtures. The effects of over- and under-wafer topography on etch profiles will also be discussed.

  4. Effects of chemical etching and functionalization times on the properties of Cu/polyimide films

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Kisoo; Hwang, Soomin; Lee, Changmin; Kim, Won; Lee, Seungmuk; Park, Geunchul; Jung, Seungboo; Joo, Jinho [Sungkyunkwan University, Suwon (Korea, Republic of); Lim, Junhyung [Stanford University, Stanford, CA (United States)

    2010-12-15

    We fabricated flexible Cu/Polyimide (PI) films by electroless- and electro-Cu plating on surface modified PI via chemical etching and functionalization, and investigated the effects of the modification time on the contact angle, surface energy and morphology, Pd catalyst amount on PI, and resultant peel strength between Cu/PI layers. Chemical etching and successive functionalization were performed on PI surfaces for 0 - 10 min, followed by electroless- and electro-Cu plating. Chemical etching effectively modified the PI surface from a hydrophobic to a hydrophilic state. In addition, chemical functionalization significantly increased the amount of Pd absorption on PI, which consequently enhanced the peel strength between Cu/PI. The peel strength of the resulting Cu/PI film processed by both chemical etching and functionalization for 5 min increased to 5.08 N/cm, which was 4.2 and 2.8 times higher than films processed with functionalization and etching alone, respectively. The highest strength that was achieved was a result of the combined effects of the increased work of adhesion and the increased Pd amount for both treatments; however, the amount of Pd was likely to be the more critical factor for the high level of adhesion between Cu/PI, rather than the work of adhesion.

  5. Nanotexturing of GaN light-emitting diode material through mask-less dry etching

    Energy Technology Data Exchange (ETDEWEB)

    Dylewicz, Rafal; Khokhar, Ali Z; Rahman, Faiz [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Wasielewski, Radoslaw; Mazur, Piotr, E-mail: Faiz.Rahman@glasgow.ac.uk [Institute of Experimental Physics, University of Wroclaw, plac Maxa Borna 9, 50-204 Wroclaw (Poland)

    2011-02-04

    We describe a new technique for random surface texturing of a gallium nitride (GaN) light-emitting diode wafer through a mask-less dry etch process. This involves depositing a sub-monolayer film of silica nanospheres (typical diameter of 200 nm) and then subjecting the coated wafer to a dry etch process with enhanced physical bombardment. The silica spheres acting as nanotargets get sputtered and silica fragments are randomly deposited on the GaN epi-layer. Subsequently, the reactive component of the dry etch plasma etches through the exposed GaN surface. Silica fragments act as nanoparticles, locally masking the underlying GaN. The etch rate is much reduced at these sites and consequently a rough topography develops. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) inspections show that random topographic features at the scale of a few tens of nanometres are formed. Optical measurements using angle-resolved photoluminescence show that GaN light-emitting diode material thus roughened has the capability to extract more light from within the epilayers.

  6. Nanotexturing of GaN light-emitting diode material through mask-less dry etching

    Science.gov (United States)

    Dylewicz, Rafal; Khokhar, Ali Z.; Wasielewski, Radoslaw; Mazur, Piotr; Rahman, Faiz

    2011-02-01

    We describe a new technique for random surface texturing of a gallium nitride (GaN) light-emitting diode wafer through a mask-less dry etch process. This involves depositing a sub-monolayer film of silica nanospheres (typical diameter of 200 nm) and then subjecting the coated wafer to a dry etch process with enhanced physical bombardment. The silica spheres acting as nanotargets get sputtered and silica fragments are randomly deposited on the GaN epi-layer. Subsequently, the reactive component of the dry etch plasma etches through the exposed GaN surface. Silica fragments act as nanoparticles, locally masking the underlying GaN. The etch rate is much reduced at these sites and consequently a rough topography develops. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) inspections show that random topographic features at the scale of a few tens of nanometres are formed. Optical measurements using angle-resolved photoluminescence show that GaN light-emitting diode material thus roughened has the capability to extract more light from within the epilayers.

  7. Study of macroporous silicon electrochemical etching in 3D structured N type silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kouassi, Sebastien; Gautier, Gael; Desplobain, Sebastien; Ventura, Laurent [Laboratoire de Microelectronique de Puissance, Universite Francois Rabelais Tours, 16 Rue Pierre et Marie Curie, 37071 Tours Cedex 2 (France)

    2011-06-15

    In this paper, the electrochemical etching of 3D n-type substrates is investigated. These types of 3D structures are of interest to increase the active surface of some systems. Our aim is to improve a MEMS (Micro-Electro Mechanical System) micro fuel cell power through total surface enhancement without any modification of the cell footprint. To reach this objective, we perform a gas diffusion layer using localized macro-porous silicon. The porous area total surface is improved through trench formation (before porous silicon etching). This is supposed to allow a better power to surface ratio for manufactured fuel cell. The Figure on the right hand side introduces the aimed MEMS based micro fuel cell. The geometrical parameters of the designed structures and the manufacturing process influence are presented. To perform 3D structures, two types of anisotropic etching techniques have been used, alkaline etching of silicon and deep reactive ion etching (DRIE). Additional steps such as a doping layer have been used to improve the results obtained with the initial micro-fabrication process. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

    Science.gov (United States)

    Liebes, Yael; Hadad, Binyamin; Ashkenasy, Nurit

    2011-07-01

    The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

  9. Effects of electrons on the shape of nanopores prepared by focused electron beam induced etching

    Energy Technology Data Exchange (ETDEWEB)

    Liebes, Yael; Ashkenasy, Nurit [Department of Materials Engineering, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel); Hadad, Binyamin, E-mail: nurita@bgu.ac.il [The Ilze Kaz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, PO Box 653 Beer-Sheva (Israel)

    2011-07-15

    The fabrication of nanometric pores with controlled size is important for applications such as single molecule detection. We have recently suggested the use of focused electron beam induced etching (FEBIE) for the preparation of such nanopores in silicon nitride membranes. The use of a scanning probe microscope as the electron beam source makes this technique comparably accessible, opening the way to widespread fabrication of nanopores. Since the shape of the nanopores is critically important for their performance, in this work we focus on its analysis and study the dependence of the nanopore shape on the electron beam acceleration voltage. We show that the nanopore adopts a funnel-like shape, with a central pore penetrating the entire membrane, surrounded by an extended shallow-etched region at the top of the membrane. While the internal nanopore size was found to depend on the electron acceleration voltage, the nanopore edges extended beyond the primary electron beam spot size due to long-range effects, such as radiolysis and diffusion. Moreover, the size of the peripheral-etched region was found to be less dependent on the acceleration voltage. We also found that chemical etching is the rate-limiting step of the process and is only slightly dependent on the acceleration voltage. Furthermore, due to the chemical etch process the chemical composition of the nanopore rims was found to maintain the bulk membrane composition.

  10. Dopant Selective Reactive Ion Etching of Silicon Carbide

    Science.gov (United States)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  11. Multi-layer model vs. single-layer model for N and P doped poly layers in etch bias modeling

    Science.gov (United States)

    Li, Jianliang; Vidal-Russell, Ezequiel; Beale, Daniel; Wang, Chunqing; Melvin, Lawrence S., III

    2010-09-01

    In modern photolithography, ever smaller critical dimension (CD) budgets require tighter control over the entire process, demanding more accurate practice of optical proximity correction (OPC). In last decade, the model based OPC (MBOPC) has outpaced the rule based OPC (RBOPC) and become widely adopted in semiconductor industry. During the MBOPC process, the physical models are called to compute the signal values at the evaluation points and the design patterns are perturbed such that the final model contours are as close to the targets as possible. It has been demonstrated that in addition to simulating the optics and resist effects, the physical models must accommodate the pattern distortion due to etch process as well. While the etch process may be lumped with optics and resist processes into one model for the 65nm and above nodes, it can no longer be treated as small perturbations on photolithographic effects for more advanced nodes and it is highly desired to build a physics-based etch model formulations that differ from the conventional convolution-based process models used to simulate the optical and resist effect. Our previous studies proposed a novel non-linear etch modeling object in combination with conventional convolution kernels, which simulates the non-optics and non-resist proximity effect successfully. This study examines further the non-linear etch modeling method by checking the different behaviors of N and p doped layers which physically have different etching rates and should be represented differently in etch modeling. The experimental results indicate that the fitting accuracy is significantly improved when the data points are split into N and P groups and calibrated separately. The N and P layer etch models are used in staged MBOPCs and the results are compared with single-layer model as well.

  12. SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER

    Institute of Scientific and Technical Information of China (English)

    T.T. Sun; Z.G. Liu; H.C. Yu; M.B. Chen; J.M. Miao

    2005-01-01

    Dry etching of silicon is an essential process step for the fabrication of Microelectromechancal system (MEMS) The AZ7220 positive photo-resist was used as the etching mask and silicon micro-trenches were fabricated with a multiplexed inductively coupled plasma (ICP) etcher.The influence of resist pattern profile, and etch condition on sidewall roughness were investigated detail. The results show that the sidewall roughness of micro-trench depends on profiles of photo-resist pattern, the initial interface between the resist bottom surface and silicon surface heavily. The relationship between roughness and process optimization parameters are presented in the paper. The roughness of the sidewall has been decreased to a 20-50nm with this experiment.

  13. Applications of porous silicon formed by electrochemical etching using an electrolyte based on HF:formaldehyde

    Science.gov (United States)

    De La Luz Merino, S.; Morales-Morales, F.; Méndez-Blas, A.; Calixto, M. E.; Nieto-Caballero, F. G.; García-Salgado, G.

    2013-06-01

    In this work, we report the experimental results on the formation of porous silicon (PSi) monolayers by electrochemical etching using a formaldehyde based electrolyte. The results were compared with PSi monolayers obtained with the traditional electrolyte (HF:ethanol). Both electrolytes facilitate the removal of H2 generated as a subproduct during the electrochemical etching process in the surface of the c-Si substrate. Formaldehyde presents a good affinity to surfaces and interfaces and the excess of water in the electrolyte reduces the pore sizes of PSi samples. The porosity and etching rate values are similar than those obtained using HF:et solutions. The refractive index values are the same in both cases at the same porosity in the visible range. The results have shown that the chemical characteristics of the ethanol and formaldehyde can give some different advantages to the PSi process and its applications.

  14. Versatile micropipette technology based on deep reactive ion etching and anodic bonding for biological applications

    Science.gov (United States)

    Lopez-Martinez, M. J.; Campo, E. M.; Caballero, D.; Fernandez, E.; Errachid, A.; Esteve, J.; Plaza, J. A.

    2009-10-01

    A novel, versatile and robust technology to manufacture transparent micropipettes, suitable for biological applications, is presented here. Up to three deep reactive ion etchings have been included in the manufacturing process, providing highly controlled geometry of reservoirs, connection cavities and inlet ports. Etching processes have been used for the definition of chip and reservoir and for nozzle release. Additionally, special design considerations have been developed to facilitate micro-to-macro fluidic connections. Implementation of anodic bonding to seal a glass substrate to the fluidic structure etched on Si, allowed observation of the flow inside the reservoir. Flow tests have been conducted by filling channels with different fluids. Flow was observed under an optical microscope, both during capillary filling and also during pumping. Dispensing has been demonstrated by functionalizing the surface of an AFM cantilever. Mechanical tests performed by piercing live mouse cells with FIB-sharpened micropipettes suggest the design is sturdy for biological piercing applications.

  15. Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Ehrhardt, M. [Leibniz-Institute of Surface Modification, Permoserstr. 15, 04318 Leipzig (Germany); Raciukaitis, G.; Gecys, P. [Laboratory for Applied Research, Institute of Physics, Savanoriu Ave. 231, LT-02300 Vilnius (Lithuania); Zimmer, K., E-mail: martin.ehrhardt@iom-leipzig.de [Leibniz-Institute of Surface Modification, Permoserstr. 15, 04318 Leipzig (Germany)

    2010-09-15

    The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF{sub 2}, MgF{sub 2}), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond (t{sub p} = 10 ps) lasers at UV wavelengths ({lambda}{sub 1} = 355 nm and {lambda}{sub 2} = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a {lambda}{sub 1} = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths ({lambda}{sub 1} = 266 nm and {lambda}{sub 2} = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm{sup 2}, respectively.

  16. Comparative Analysis of in vitro Performance of Total-Etch and Self-Etch Adhesives

    Directory of Open Access Journals (Sweden)

    Timur V. Melkumyan

    2016-12-01

    Full Text Available The aim of the study was in vitro assessment of shear bond strength and micro-leakage after application of total-etch and self-etch adhesive systems. Materials and Methods: Four adhesive systems were chosen for assessment of adhesion performance: Contax (DMG, GmbH, Bond Force (Tokuyama Dental Corp. Japan Mfr, Te-Econom Bond (Ivoclar Vivadent, Liechtenstein and Swisstec SL Bond (Coltene, Switzerland. The assessment of bond strength was performed on 20 tooth samples, which were prepared in accordance with the UltraTest technique for shear bond strength (SBS estimation. The test was conducted at a crosshead speed of 1.0 mm/min and results were fixed in kilograms. The assessment of SBS was performed on enamel and dentin separately. Microleakage assessment of self-etch and total-etch adhesive systems was performed on 20 extracted non-carious upper human premolars with immersion in 1% methylene blue solution after thermocycling. Results: Good SBS results and microleakage values on the dentin substrate were obtained after application of the Contax self-etch bonding agent. But the values of bond strength to enamel and the extent of dye penetration within the composite-enamel interface were still better with the total-etch approach.

  17. Microtensile bond strength of etch and rinse versus self-etch adhesive systems.

    Science.gov (United States)

    Hamouda, Ibrahim M; Samra, Nagia R; Badawi, Manal F

    2011-04-01

    The aim of this study was to compare the microtensile bond strength of the etch and rinse adhesive versus one-component or two-component self-etch adhesives. Twelve intact human molar teeth were cleaned and the occlusal enamel of the teeth was removed. The exposed dentin surfaces were polished and rinsed, and the adhesives were applied. A microhybride composite resin was applied to form specimens of 4 mm height and 6 mm diameter. The specimens were sectioned perpendicular to the adhesive interface to produce dentin-resin composite sticks, with an adhesive area of approximately 1.4 mm(2). The sticks were subjected to tensile loading until failure occurred. The debonded areas were examined with a scanning electron microscope to determine the site of failure. The results showed that the microtensile bond strength of the etch and rinse adhesive was higher than that of one-component or two-component self-etch adhesives. The scanning electron microscope examination of the dentin surfaces revealed adhesive and mixed modes of failure. The adhesive mode of failure occurred at the adhesive/dentin interface, while the mixed mode of failure occurred partially in the composite and partially at the adhesive/dentin interface. It was concluded that the etch and rinse adhesive had higher microtensile bond strength when compared to that of the self-etch adhesives.

  18. Dentin diffusion of HEMA released from etch-and-rinse and self-etch bonding systems.

    Science.gov (United States)

    Rathke, Andreas; Alt, Andreas; Gambin, Nadin; Haller, Bernd

    2007-12-01

    The aim of this in vitro study was to determine the diffusion of 2-hydroxyethyl methacrylate (HEMA) released from different bonding systems (BS) through dentin. Occlusal cavities with a remaining dentin thickness (RDT) of 0.5 mm (n=90) and 0.25 mm (n=80), respectively, were prepared in dentin discs of non-carious human molars. Artificial pulp chambers were attached to the pulpal side of each dentin disc. Bonding systems were applied with (Clearfil SE Bond, OptiBond FL, OptiBond Solo Plus) or without (AdheSE, Adper Prompt L-Pop, Clearfil SE Bond, OptiBond FL, OptiBond Solo Plus Self Etch, Xeno III) prior phosphoric acid etching. HEMA was detected by gas chromatography/mass spectrometry (n=10 per BS and RDT). The highest mean HEMA concentration was found in the 0.25 mm RDT group treated with OptiBond FL (13.3 microg) and the lowest mean HEMA concentration was detected in the 0.5 mm RDT group treated with AdheSE (0.5 microg). At 0.25 mm RDT the quantities of HEMA recovered in the artificial pulp chambers were significantly higher than at 0.5 mm RDT, except for Clearfil SE Bond. Etching with phosphoric acid increased the detected HEMA quantities compared with self-etch BS. In deep cavity preparations, etching with phosphoric acid should be avoided in favor of the use of self-etch BS.

  19. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    distance. In this dissertation it is presented the first nitride blue edge emitting LD with a photoelectrochemical etched current aperture (CA-LD) into the device active region. Photoelectrochemical etching (PECE) has emerged as a powerful wet etching technique for III-nitride compounds. Beyond the advantages of wet etching technique, PECE offers bandgap selectivity, which is particularly desirable because it allows more freedom in designing new and advanced devices with higher performances. In the first part of this thesis a review of PECE is presented, and it is shown how it can be used to achieve a selective and controllable deep undercut of the active region of LEDs and LDs, in particular the selective PECE of MQW active region of (10-10) m-plane and (20-2-1) plane structures is reported. In the second part of this thesis, the fabrication flow process of the CA-LD is described. The performance of these devices is compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure and active region width and it is experimentally shown that the CA-LD design has superior performance. CW operation of a (20-2-1) CA-LD with a 1.5 microm wide active region is demonstrated. Finally, in the third and last part of this thesis, the CA-LD performance is discussed in more details, in particular, an analysis of optical scattering losses caused by the rough edges of the remnant PEC etched active region is presented.

  20. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

    Science.gov (United States)

    Luna, Lunet E.; Tadjer, Marko J.; Anderson, Travis J.; Imhoff, Eugene A.; Hobart, Karl D.; Kub, Fritz J.

    2017-10-01

    Cycles of inductively coupled SF6/O2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µm-deep trenches with 5.5 µm-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µm at an etch rate of ~0.26 µm min-1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated.

  1. XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide

    Science.gov (United States)

    Deng, Changmeng; Geng, Yongyou; Wu, Yiqun

    Phase change lithography has pretty potential applications for high density optical data storage mastering and micro/nano structure patterning because it is not restricted by optical diffraction limitation and at relatively low cost. GeSbTe, as an initially investigated material for phase change lithography, its mechanism of selective etching in inorganic or organic alkaline aqueous solutions, such as NaOH and tetramethylammonium hydroxide (TMAH), is still unknown. In this paper, XPS measurement is used to study the selective wet etching mechanism of GeSbTe phase change thin films with TMAH solution, and the results show that oxidization played an important role in the etching process. Ge, Sb and Te are oxidized into GeO2, Sb2O5 and TeO2, respectively, and then as the corresponding salts dissolved into the etchant solution. Ge-X (X is Ge, Sb or Te) bonds are first broken in the etching, then Sb-X bonds, and finally Te-Te bonds. To confirm the effect of oxidization in the etching, H2O2 as an oxidant is added into the TMAH solution, and the etching rates are increased greatly for both amorphous and crystalline states. The selective etching mechanism of Ge2Sb2Te5 phase change films is discussed by the difference of bonds breakage between the amorphous and crystalline states.

  2. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    A.I. Abdalla; A.J. Feilzer

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid Bond’

  3. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

  4. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS equipment

    Directory of Open Access Journals (Sweden)

    Ann-Kathrin Kleinschmidt

    2016-11-01

    Full Text Available Reflectance anisotropy spectroscopy (RAS equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

  5. Wavelength dependent laser-induced etching of Cr–O doped GaAs: Morphology studies by SEM and AFM

    Indian Academy of Sciences (India)

    B Joshi; S S Islam; H S Mavi; Vinita Kumari; T Islam; A K Shukla; Harsh

    2009-02-01

    The laser induced etching of semi-insulating GaAs $\\langle$100$\\rangle$ is carried out to create porous structure under super- and sub-bandgap photon illumination (ℎν). The etching mechanism is different for these separate illuminations where defect states play the key role in making distinction between these two processes. Separate models are proposed for both the cases to explain the etching efficiency. It is observed that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs nanostructures is observed using scanning electron (SEM) and atomic force microscopy (AFM).

  6. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching.

    Science.gov (United States)

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-09

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  7. Rocking curve FWHM maps of a chemically etched (0 0 1) oriented HPHT type Ib diamond crystal plate

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Y; Macrander, A T; Krasnicki, S; Chu, Y S; Maj, J; Assoufid, L; Qian, J [Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2007-09-07

    Synchrotron radiation and a CCD detector were employed to map the full width at half maximum (FWHM) of rocking curves for a synthetic (0 0 1) oriented type Ib diamond plate. The plate was sawed from a diamond grown in the high-pressure-high-temperature (HPHT) process. Maps for broadening relative to a reference point on the diamond for the (2 2 4) reflection at 12 keV are reported before and after chemical etching. Significant rocking curve narrowing over most of the diamond was found, and we conclude that the diffraction performance of (0 0 1) oriented type Ib diamonds can be significantly improved over a large area by chemical etching. Stripes in the map before etching corresponded to grooves formed in the process of sawing the plate out of the as-grown stone. The FWHM map did not correlate with the surface height profile measured after {approx}10 {mu}m were removed from the surface by etching.

  8. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  9. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    Science.gov (United States)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  10. Effects of Gas and Surface Temperatures during Cryogenic Etching of silicon with SF6/O2

    Science.gov (United States)

    Tinck, Stefan; Neyts, Erik; Tillocher, Thomas; Dussart, Remi; Bogaerts, Annemie; Plasmant Team; Gremi Team

    2016-09-01

    Cryogenic deep reactive ion etching (DRIE) of silicon and SiO2 used for creating vias is investigated. The wafer is cooled to about -100 °C and a SF6/O2 mixture is applied. During cryogenic DRIE, a SiFxOy passivation layer is formed which prevents isotropic etching and the diffusion of F atoms into the Si or SiO2 material. When the wafer is brought back to room temperature, this passivation layer desorbs naturally, leaving a clean trench with no scalloping. The primary issue with cryogenic DRIE is the high sensitivity to oxygen content and substrate or gas temperature. Both effects are investigated here. We believe that understanding the temperature dependent surface behavior of the O and F atoms to etch silicon is a primary step in obtaining full insight in the mechanisms of the SiFxOy passivation layer formation and automatic desorption. For this purpose, we apply a self-consistent model that covers both the bulk plasma characteristics as well as the surface processes during etching. Molecular Dynamics (MD) simulations are also performed to obtain insight in the surface reaction mechanisms. For validation of the modeling results, the etch rates are also experimentally obtained with reflectometry and Scanning Electron Microscopy (SEM) pictures.

  11. Evaluation of Cu Ion Concentration Effects on Cu Etching Rate in Chemical-Mechanical Polishing Slurry

    Science.gov (United States)

    Nishizawa, Hideaki; Sugiura, Osamu; Matsumura, Yoshiyuki; Kinoshita, Masaharu

    2007-04-01

    The effects of Cu ion concentration of the different solutions on Cu etching rate were investigated. From the dipping experiment of Cu substrates in different solutions of malic acid, hydrogen peroxide (H2O2), benzotriazole (BTA), and Cu ions, it was revealed that Cu etching rate is increased if the concentration of Cu(II) ions added in the solution is high. This is considered to be caused by the effect of Cu(II) ions on H2O2 molecules. In the solution of pH 7, the Cu etching rate increased markedly between 1.7× 10-4 and 3.4× 10-4 M Cu(II) ion concentrations. The maximum increase in the etching rate was from 990 to 2200 nm/min at a H2O2 concentration of 2 wt %. In the solution of pH 3, a marked change in the etching rate was not observed. Our results show that the concentration of Cu ions on the polishing pad in chemical-mechanical polishing (CMP) process is very important.

  12. Systematic study on pulse parameters in fabricating porous silicon-layered structures by pulse electrochemical etching

    Science.gov (United States)

    Ge, J.; Yin, W. J.; Ma, L. L.; Obbard, E.; Ding, X. M.; Hou, X. Y.

    2007-08-01

    Pulse electrochemical etching was used to improve the quality of porous silicon (PS) layers. Although alternative PS layers of different porosities have been realized by this etching technique, there is no systematic study on the influence of different etching pulse parameters on PS during the etching process. We test various combinations of pulse parameters, including duty cycle and duration, in fabricating PS-layered structures. The optical thickness and actual thickness of the PS structures fabricated are investigated by means of reflectance spectroscopy and scanning electron microscopy. It is found that reducing the duty cycle and pulse duration of the pulse can promote the formation of PS layers with a large optical thickness and high refractive index. Meanwhile, the uniformity of PS is also improved. The duty cycle of 1:10-1:20 and pulse duration of 0.1-0.2 ms can result in the best uniformity and smoothness for the highly doped p-Si wafers. We believe that our work could set the foundation for further improvement of pulse electrochemical etching.

  13. Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Montesdeoca-Santana, A. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen, Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Departamento de Energia Fotovoltaica, Instituto Tecnologico y de Energias Renovables. Poligono Industrial de Granadilla s/n, 38600 San Isidro-Granadilla de Abona (Spain); Jimenez-Rodriguez, E. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Ziegler, J. [Fraunhofer Institute for Solar Energy Systems, Laboratory- and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Velazquez, J.J. [Departamento de Fisica Fundamental y Experimental, Electronica y Sistemas, Universidad de La Laguna. Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain); Hohage, S.; Borchert, D. [Fraunhofer Institute for Solar Energy Systems, Laboratory and Servicecenter Gelsenkirchen. Auf der Reihe 2, 45884 Gelsenkirchen (Germany); Guerrero-Lemus, R., E-mail: rglemus@ull.es [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38206 La Laguna (Spain)

    2011-11-15

    Highlights: > An enhanced minority carrier lifetime at extended defects in multicrystalline silicon is observed with the use of HF/HNO{sub 3} stain etching to texture the surface. > FTIR analysis shows no influence of oxide passivation in this effect. > SEM images show a preferential etching at extended defects suggesting smoothing at defects as one of the causes for the reduced recombination activity. > LBIC images show a reduction in IQE at extended defects in HF/HNO{sub 3} textured multicrystalline solar cells. - Abstract: In this work the use of HF/HNO{sub 3} solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.

  14. Effect of ammonia gas etching on growth of vertically aligned carbon nanotubes/nanofibers

    Institute of Scientific and Technical Information of China (English)

    Sang-Gook KIM; Sooh-Yung KIM; Hytmg-Woo LEE

    2011-01-01

    The etching effect of ammonia (NH3) on the growth of vertically aligned nanotubes/nanofibers (CNTs) was investigated by direct-current plasma enhanced chemical vapor deposition (DC-PECVD). NH3 gas etches Ni catalyst layer to form nanoscale islands while NH3 plasma etches the deposited amorphous carbon. Based on the etching effect of NH3 gas on Ni catalyst, the differences of growing bundles of CNTs and single strand CNTs were discussed; specifically, the amount of optimal NH3 gas etchingis different between bundles of CNTs and single strand CNTs. In contrast to the CNT carpet growth. the single strand CNT growth requires shorter etching time (5 min) than large catalytic patterns (10 min) since nano dots already form catalyst islands for CNT growth. Through removing the plasma pretreatment process, the damage from being exposed at high temperature substrate occurring during the plasma generation time is minimized. High resolution transmission electron microscopy (HTEM) shows fishbone structure of CNTs grown by PECVD.

  15. Enzymatic degradation of adhesive-dentin interfaces produced by mild self-etch adhesives.

    Science.gov (United States)

    De Munck, Jan; Mine, Atsushi; Van den Steen, Philippe E; Van Landuyt, Kirsten L; Poitevin, André; Opdenakker, Ghislain; Van Meerbeek, Bart

    2010-10-01

    Endogenous matrix metalloproteinases (MMPs) released by adhesive procedures may degrade collagen in the hybrid layer and so compromise the bonding effectiveness of etch-and-rinse adhesives. In this study, endogenous enzymatic degradation was evaluated for several simplified self-etch adhesives. In addition, primers were modified by adding two MMP inhibitors: chlorhexidine, a commonly used disinfectant, but also a non-specific MMP inhibitor; and SB-3CT, a specific inhibitor of MMP-2 and MMP-9. Gelatin zymography of fresh human dentin powder was used to identify the enzymes released by the adhesives. Micro-tensile bond strength (μTBS) testing was used to assess the mechanical properties of resin-dentin interfaces over time. In none of the experimental groups treated with the mild self-etch adhesives was MMP-2 and/or MMP-9 identified. Also, no difference in the μTBS was measured for the inhibitor-modified and the control inhibitor-free adhesives after 6 months of water storage. It is concluded that in contrast to etch-and-rinse adhesives, the involvement of endogenous MMP-2 and MMP-9 in the bond-degradation process is minimal for mild self-etch adhesives.

  16. Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air

    Science.gov (United States)

    Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H.

    2017-04-01

    Many studies proved that non-equilibrium discharges generated at atmospheric pressure are highly effective for the bio-decontamination of surfaces of various materials. One of the key processes that leads to a desired result is plasma etching and thus the evaluation of etching rates of organic materials is of high importance. However, the comparison of reported results is rather difficult if impossible as different authors use diverse sources of atmospheric plasma that are operated at significantly different operational parameters. Therefore, we report here on the systematic study of the etching of nine different common polymers that mimic the different structures of more complicated biological systems, bovine serum albumin (BSA) selected as the model protein and spores of Bacillus subtilis taken as a representative of highly resistant micro-organisms. The treatment of these materials was performed by means of atmospheric pressure dielectric barrier discharge (DBD) sustained in open air at constant conditions. All tested polymers, BSA and spores, were readily etched by DBD plasma. However, the measured etching rates were found to be dependent on the chemical structure of treated materials, namely on the presence of oxygen in the structure of polymers.

  17. Nanotexturing of Conjugated Polymers via One-Step Maskless Oxygen Plasma Etching for Enhanced Tunable Wettability.

    Science.gov (United States)

    Jiang, Youhua; Xu, Jian; Lee, Junghoon; Du, Ke; Yang, Eui-Hyeok; Moon, Myoung-Woon; Choi, Chang-Hwan

    2017-07-11

    A one-step maskless oxygen plasma etching process is investigated to nanopattern conjugated polymer dodecylbenzenesulfonate doped polypyrrole (PPy(DBS)) and to examine the effects of nanostructures on the inherent tunable wettability of the surface and the droplet mobility. Etching characteristics such as the geometry and dimensions of the nanostructures are systematically examined for the etching power and duration. The mechanism of self-formation of vertically aligned dense-array pillared nanostructures in the one-step maskless oxygen plasma etching process is also investigated. Results show that lateral dimensions such as the periodicity and diameter of the pillared nanostructures are insensitive to the etching power and duration, whereas the length and aspect ratio of the nanostructures increase with them. X-ray photoelectron spectroscopy analysis and thermal treatment of the polymer reveal that the codeposition of impurities on the surface resulting from the holding substrate is the primary reason for the self-formation of nanostructures during the oxygen plasma etching, whereas the local crystallinity subject to thermal treatment has a minor effect on the lateral dimensions. Retaining the tunable wettability (oleophobicity) for organic droplets during the electrochemical redox (i.e., reduction and oxidization) process, the nanotextured PPy(DBS) surface shows significant enhancement of droplet mobility compared to that of the flat PPy(DBS) surface with no nanotexture by making the surface superoleophobic (i.e., in a Cassie-Baxter wetting state). Such enhancement of the tunable oleophobicity and droplet mobility of the conjugated polymer will be of great significance in many applications such as microfluidics, lab-on-a-chip devices, and water/oil treatment.

  18. Chemical etching of deformation sub-structures in quartz

    Science.gov (United States)

    Wegner, M. W.; Christie, J. M.

    1983-02-01

    Chemical etching of dislocations has been studied in natural and synthetic quartz single crystals, in deformed synthetic quartz and in naturally and experimentally deformed quartzites. The ability of different etchants to produce polished or preferentially etched surfaces on quartz is described. Dislocation etching was achieved on all crystal planes examined by using a saturated solution of ammonium bifluoride as the etchant. Appropriate etching times were determined for etching quartzites for grain size, subgrain boundaries, deformation lamellae, dislocations and twins. Growth and polished surfaces of synthetic single crystal quartz were similarly etched and dislocation etch pits, characteristic of various orientations were found. The use of ammonium bifluoride proved to be expecially advantageous for the basal plane, producing a polished surface with etch pits, suitable for dislocation etch pit counting. “Double” etch pits have been found on Dauphiné twin boundaries on the basal plane and the first order prism, using this etchant. Slip lines and deformation bands were suitably etched on deformed synthetic crystal surfaces for identification of the slip planes. Other acidic etchants have been explored and their application to the study of deformation structures in quartz crystals is discussed.

  19. Influence of intermittently etching on quality of CVD diamond thin films

    Institute of Scientific and Technical Information of China (English)

    YANG Kan-cheng; XIA Yi-ben; WANG Lin-jun; LIU Jian-min; SU Qing-feng; XU Run; PENG Hong-yan; SHI Wei-min

    2006-01-01

    A new method,called growing-etching repetitional process based on hot filament chemical vapor deposition,was proposed to improve the quality of diamond film. During the deposition carbon source was intermittently closed letting hydrogen etch the surface of the diamond film from time to time. In order to find whether it is helpful to the films' quality,a series of experiments were done. The results show that the new method can enhance the orientation of the chemical vapor deposition diamond films,reduce the graphite phase and increase the film's surface resistivity.

  20. Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching

    Science.gov (United States)

    Tiginyanu, I. M.; Ursaki, V. V.; Zalamai, V. V.; Langa, S.; Hubbard, S.; Pavlidis, D.; Föll, H.

    2003-08-01

    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence spectroscopy characterization shows that the as-grown bulk GaN layers suffer from compressive biaxial strain of 0.5 GPa. The majority of nanocolumns are fully relaxed from strain, and the room-temperature luminescence is free excitonic. The high quality of the columnar nanostructures evidenced by the enhanced intensity of the exciton luminescence and by the decrease of the yellow luminescence is explained by the peculiarities of the anodic etching processing.

  1. Peculiarity of plasmachemical etching of silicon plate edges of photoelectric converters

    Directory of Open Access Journals (Sweden)

    Fedorovich O. A.

    2009-11-01

    Full Text Available Results of technological researches of plasmachemical reactor (PCR for etching of silicon plate edges of photo-electric converters are described. Dependences of silicon etching speed on a discharge current, magnetic field intensity, quantity of the process able surface area and gases composition are resulted. Recommendations on technological use of PCR in an industrial production of photo-electric converters (PEC are given. The productivity of PCR, developed in INR, is higher then productivity of the best foreign analogue of firm «Alkatel» more then in two times.

  2. Water adsorption on etched hydrophobic surfaces of L-, D- and DL-valine crystals

    Science.gov (United States)

    Segura, J. J.; Verdaguer, A.; Fraxedas, J.

    2014-03-01

    The adsorption of water on etched (001) surfaces of L-, D- and DL-valine crystals has been characterized by atomic force microscopy (AFM) using different operational modes (contact, non-contact and electrostatic) above and below the dew point, the temperature at which water vapor from humid air condenses into liquid water at constant atmospheric pressure. The analysis of the images suggests the formation of aggregates of solvated valine molecules that easily diffuse on the hydrophobic terraces only constrained by step barriers of the well-defined chiral parallelepipedic patterns induced by the etching process.

  3. Low-loss slot waveguides with silicon (111 surfaces realized using anisotropic wet etching

    Directory of Open Access Journals (Sweden)

    Kapil Debnath

    2016-11-01

    Full Text Available We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI platform. Waveguides oriented along the (11-2 direction on the Si (110 plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  4. Low-loss slot waveguides with silicon (111) surfaces realized using anisotropic wet etching

    Science.gov (United States)

    Debnath, Kapil; Khokhar, Ali; Boden, Stuart; Arimoto, Hideo; Oo, Swe; Chong, Harold; Reed, Graham; Saito, Shinichi

    2016-11-01

    We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI) platform. Waveguides oriented along the (11-2) direction on the Si (110) plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  5. The regeneration and recycle of chromium etching solutions using concentrator cell membrane technology.

    Science.gov (United States)

    Chaudhary, Abdul J; Ganguli, Bijita; Grimes, Susan M

    2006-02-01

    The regeneration of chromium (VI) and the recovery of etched copper from chromium etching solutions by electrodialysis is improved by the addition of a concentrator cell in the catholyte chamber. The concentrator media used are ion-exchange resins or activated carbon cloth. The maximum percentages for the regeneration of chromium and recovery of copper in these systems is however less than 80% and 90% respectively because of the competition between the processes of oxidation of Cr(III) and electrodeposition of copper. A novel combination of electrolysis with electrodialysis and concentrator cell technology is developed that achieves 92% chromium regeneration and 90% copper recovery.

  6. Block copolymer templated etching on silicon.

    Science.gov (United States)

    Qiao, Yinghong; Wang, Dong; Buriak, Jillian M

    2007-02-01

    The use of self-assembled polymer structures to direct the formation of mesoscopic (1-100 nm) features on silicon could provide a fabrication-compatible means to produce nanoscale patterns, supplementing conventional lithographic techniques. Here we demonstrate nanoscale etching of silicon, applying standard aqueous-based fluoride etchants, to produce three-dimensional nanoscale features with controllable shapes, sizes, average spacing, and chemical functionalization. The block copolymers serve to direct the silicon surface chemistry by controlling the spatial location of the reaction as well as concentration of reagents. The interiors of the resulting etched nanoscale features may be selectively functionalized with organic monolayers, metal nanoparticles, and other materials, leading to a range of ordered arrays on silicon.

  7. Wafer scale oblique angle plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  8. In-situ end-point detection during ion-beam etching of multilayer dielectric gratings

    Institute of Scientific and Technical Information of China (English)

    Hua Lin; Lifeng Li; Lijiang Zeng

    2005-01-01

    @@ An in-situ end-point detection technique for ion-beam etching is presented. A laser beam of the same wavelength and polarization as those in the intended application of the grating is fed into the vacuum chamber, and the beam retro-diffracted by the grating under etching is extracted and detected outside the chamber. This arrangement greatly simplifies the end-point detection. Modeling the grating diffraction with a rigorous diffraction grating computer program, we can satisfactorily simulate the evolution of the diffraction intensity during the etching process and consequently, we can accurately predict the end-point.Employing the proposed technique, we have reproducibly fabricated multilayer dielectric gratings with diffraction efficiencies of more than 92%.

  9. Double side multicrystalline silicon passivation by one step stain etching-based porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, Seifeddine Belhadj; Ben Rabha, Mohamed; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2012-10-15

    In this paper, we investigate the effect of stain etching-based porous silicon on the double side multicrystalline silicon. Special attention is given to the use of the stain etched PS as an antireflection coating as well as for surface passivating capabilities. Stain etching of double side multicrystalline silicon leads to the formation of PS nanostructures, that dramatically decrease the surface reflectivity from 30% to about 7% and increase the effective lifetime from 1 {mu}s to 10 {mu}s at a minority carrier density ({Delta}n) of 10{sup 15} cm{sup -3}. These results let us correlate the rise of the lifetime values to the photoluminescence intensity to the hydrogen and oxide passivation as shown by FTIR analysis. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. An etched multilayer as a dispersive element in a curved-crystal spectrometer: implementation and performance

    CERN Document Server

    Jonnard, Philippe; André, Jean-Michel; Coudevylle, Jean-René; Isac, Nathalie; 10.1002/xrs.2398

    2012-01-01

    Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer mirrors are used in the soft x-ray range to improve the spectral resolution of wavelength dispersive spectrometers equipped with periodic multilayers. We describe the fabrication process of such an etched multilayer dispersive element, its characterization through reflectivity measurement and simulations, and its implementation in a high-resolution Johann-type spectrometer. The specially designed patterning of a Mo/B4C multilayer is found fruitful in the range of the C K emission as the diffraction pattern narrows by a factor 4 with respect to the non-etched structure. This dispersive element with an improved spectral resolution was successfully implemented for electronic structure study with an improved spectral resolution by x-ray emission spectroscopy. As first results we present the distinction between the chemical states of carbon atoms in various compounds, such as graphite, SiC and B4C, by the different sh...

  11. Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

    Science.gov (United States)

    Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

    2010-09-01

    Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

  12. Nanoscale ripple formation in Co/Si(100) thin films with Ar{sup +} beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Arranz, M A [Fac. Ciencias Quimicas, Universidad de Castilla-La Mancha, Camilo Jose Cela 10, 13071, Ciudad Real (Spain); Colino, Jose M, E-mail: HiguelAngel.Arranz@uclm.e [Instituto de Nanociencia, NanotecnologIa y Materiales Moleculares, UCLM, Campus de la Fabrica de Armas, 45071 Toledo (Spain)

    2010-01-01

    We have investigated the formation of nanoscale ripples on etched Co/Si(100) films with Ar{sup +} beam in grazing incidence. Topography and dimensions of those nanoscale patterns were characterized by means of atomic force microscopy. Polycrystalline cobalt thin films were deposited by d.c. magnetron sputtering onto Si(100) wafers and, later transferred in situ to a process chamber for the production of ripples. Their average width, W{sub d}, and separation between them, i.e. their periodicity {Lambda}, were found to monotonously increase first with the etching time and, finally, reach saturation values for long irradation times (around 30 min). The same Ar{sup +} beam etching applied on thicker Co films resulted in much wider and higher ripples, providing a more defined nanostructure for ulterior uniaxial magnetic anisotropy measurements. These changes in the ripple dimensions on increasing the Co film thickness are discussed in terms of the surface roughness in the as-deposited film.

  13. Fabrication of porous boron-doped diamond electrodes by catalytic etching under hydrogen–argon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Chao [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Cuiping, E-mail: licp226@126.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Dai, Wei [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Wu, Yongheng [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China)

    2016-01-01

    Graphical abstract: - Highlights: • Porous BDD was prepared by hydrogen–argon plasma etching with Ni nanoparticles as a catalyst. • With the increase of etching time, the pore size increases and the pore density decreases. • The etching of BDD is independent of the crystal orientation. • The porous BDD electrode exhibited much higher special capacitance than that of pristine BDD. - Abstract: Porous boron-doped diamond (BDD) was prepared by hydrogen–argon plasma etching using electrodeposited Ni nanoparticles as a catalyst. The etching process and formation mechanism of porous BDD were investigated by changing the etching time from 30 s to 300 s. Pores were produced due to the C atoms around Ni nanoparticles are easy to react with hydrogen plasma and form methane. With the increase of etching time, the pore size increased, the pore density decreased, and the pore depth first increased and then maintained unchanged. The sp{sup 2}-bonded graphitic carbons existing on the surface of BDD increase with increasing etching time due to the increase of surface area. No preferential etching was observed due to the high energy of argon plasma. The electrochemical behaviors of the pristine and porous BDD electrodes were characterized by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS). The results showed that the porous BDD electrode exhibited high specific capacitance, which is attributed to its high electrical conductivity and large specific surface area. The highest specific capacitance of porous BDD electrode is 9.55 mF cm{sup −2}, which is 22 times higher than that of pristine BDD electrode. The specific capacitance retention of the porous BDD electrode reduced to 98.2% of the initial capacitance after 500 cycles and then increased to 120.0% after 10,000 cycles. For the first 500 cycles, the reduction of capacitance can be attributed to the dissolution of Ni nanoparticles that attached on the

  14. Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

    Science.gov (United States)

    Kuritzky, L. Y.; Becerra, D. L.; Saud Abbas, A.; Nedy, J.; Nakamura, S.; DenBaars, S. P.; Cohen, D. A.

    2016-07-01

    We demonstrate a vertical (beam etching (CAIBE) in Cl2 chemistry that is suitable for forming laser diode (LD) facets on nonpolar and semipolar oriented III-nitride devices. The etch profiles were achieved with photoresist masks and optimized CAIBE chamber conditions including the platen tilt angle and Cl2 flow rate. Co-loaded studies showed similar etch rates of ˜60 nm min-1 for (20\\bar{2}\\bar{1}),(20\\bar{2}1), and m-plane orientations. The etched surfaces of LD facets on these orientations are chemically dissimilar (Ga-rich versus N-rich), but were visually indistinguishable, thus confirming the negligible orientation dependence of the etch. Continuous-wave blue LDs were fabricated on the semipolar (20\\bar{2}\\bar{1}) plane to compare CAIBE and reactive ion etch (RIE) facet processes. The CAIBE process resulted in LDs with lower threshold current densities due to reduced parasitic mirror loss compared with the RIE process. The LER, degree of verticality, and model of the 1D vertical laser mode were used to calculate a maximum uncoated facet reflection of 17% (94% of the nominal) for the CAIBE facet. The results demonstrate the suitability of CAIBE for forming high quality facets for high performance nonpolar and semipolar III-N LDs.

  15. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Kamlendra Awasthi; Vaibhav Kulshreshtha; B Tripathi; N K Acharya; M Singh; Y K Vijay

    2006-06-01

    Polymer blends of polycarbonate (PC) and polysulphone (PSF) having thickness, 27 m, are prepared by solution cast method. The transport properties of pores in a blend membrane are examined. The pores were produced in this membrane by a track etching technique. For this purpose, a thin polymer membrane was penetrated by a single heavy ion of Ni7+ of 100 MeV, followed by preferential chemical etching of the ion track. Ion permeation measurements show that pores in polymeric membrane are charged or neutralized, which depends upon the variation in concentration of the solvent. The – curve at concentration, N/10, shows that the pores are negatively charged, whereas at concentration, N/20, the linear nature of – curve indicates that the pores approach towards neutralized state and on further concentration, N/40, the pores become fully neutralized, consequently the rectifier behaviour of pores has been omitted. The gas permeability of hydrogen and carbon dioxide of this membrane was measured with increasing etching time. The permeability was measured from both the sides. Permeability at the front was larger than the permeability at the back which shows asymmetric behaviour of membranes.

  16. Selective Etching via Soft Lithography of Conductive Multilayered Gold Films with Analysis of Electrolyte Solutions

    Science.gov (United States)

    Gerber, Ralph W.; Oliver-Hoyo, Maria T.

    2008-01-01

    This experiment is designed to expose undergraduate students to the process of selective etching by using soft lithography and the resulting electrical properties of multilayered films fabricated via self-assembly of gold nanoparticles. Students fabricate a conductive film of gold on glass, apply a patterned resist using a polydimethylsiloxane…

  17. Selectivity on Etching: Creation of High-Energy Facets on Copper Nanocrystals for CO2 Electrochemical Reduction.

    Science.gov (United States)

    Wang, Zhenni; Yang, Guang; Zhang, Zhaorui; Jin, Mingshang; Yin, Yadong

    2016-04-26

    Creating high-energy facets on the surface of catalyst nanocrystals represents a promising method for enhancing their catalytic activity. Herein we show that crystal etching as the reverse process of crystal growth can directly endow nanocrystal surfaces with high-energy facets. The key is to avoid significant modification of the surface energies of the nanocrystal facets by capping effects from solvents, ions, and ligands. Using Cu nanocubes as the starting material, we have successfully demonstrated the creation of high-energy facets in metal nanocrystals by controlled chemical etching. The etched Cu nanocrystals with enriched high-energy {110} facets showed significantly enhanced activity toward CO2 reduction. We believe the etching-based strategy could be extended to the synthesis of nanocrystals of many other catalysts with more active high-energy facets.

  18. [Restoration of composite on etched stainless steel crowns. (1)].

    Science.gov (United States)

    Goto, G; Zang, Y; Hosoya, Y

    1990-01-01

    Object of investigation The retention of composite resin to etched stainless steel crowns was tested as a possible method for restoring primary anterior teeth. Method employed 1) SEM observation Stainless steel crowns (Sankin Manufacture Co.) were etched with an aqua resia to create surface roughness and undercut to retain the composite resin to the crowns. Etching times were 1, 2, 3, 5, 8, 10 and 20 minutes, then washed in a 70% alcohol solution using an ultrasonic washer and dried. A total of 96 etched samples and non etched control samples were observed through the scanning electron microscope (Hitachi 520). 2) Shear bond strength test Stainless steel crowns were etched in an aqua resia from 1 to 20 minutes, then washed and dried. Composite resin (Photo Clearfil A, Kuraray Co.) with the bonding agent was placed on the crowns and the shear bond strength was tested in 56 samples using an Autograph (DCS-500, Shimazu). Results 1) SEM observation showed that the etching surface of stainless steel crowns created surface roughness and undercut. The most desirable surface was obtained in the 3 to 5 minute etching time specimens. 2) The highest bond strength was obtained in a 3 minute etching specimen. It was 42.12 MPa, although 29.26 MPa in mean value. Conclusion Etching with an aqua resia increased the adherence of composite resin to the surface of stainless steel crowns.

  19. Experimental procurement of the complete 3D etch rate distribution of Si in anisotropic etchants based on vertically micromachined wagon wheel samples

    Science.gov (United States)

    Gosálvez, M. A.; Pal, Prem; Ferrando, N.; Hida, H.; Sato, K.

    2011-12-01

    This is part I of a series of two papers dedicated to the presentation of a novel, large throughput, experimental procedure to determine the three-dimensional distribution of the etch rate of silicon in a wide range of anisotropic etchants, including a total of 30 different etching conditions in KOH, KOH+IPA, TMAH and TMAH+Triton solutions at various concentrations and temperatures. The method is based on the use of previously reported, vertically micromachined wagon wheels (WWs) (Wind and Hines 2000 Surf. Sci. 460 21-38 Nguyen and Elwenspoek 2007 J. Electrochem. Soc. 154 D684-91), focusing on speeding up the etch rate extraction process for each WW by combining macrophotography and image processing procedures. The proposed procedure positions the WWs as a realistic alternative to the traditional hemispherical specimen. The obtained, extensive etch rate database is used to perform wet etching simulations of advanced systems, showing good agreement with the experimental counterparts. In part II of this series (Gosálvez et al J. Micromech. Microeng. 21 125008), we provide a theoretical analysis of the etched spoke shapes, a detailed comparison to the etch rates from previous studies and a self-consistency study of the measured etch rates against maximum theoretical values derived from the spoke shape analysis.

  20. Etch characteristics of Ti in Cl2/N2 and TiN in Cl2/N2/BCl3 plasmas by response surface methodology

    Science.gov (United States)

    Muthukrishnan, N. Moorthy; Amberiadis, Kostas; Elshabini-Riad, Aicha

    1998-09-01

    The etch characteristics of titanium (Ti) film in Cl2/N2 plasmas and titanium nitride (TiN) film in Cl2/N2/BCl3 plasmas are examined by design of experiment using central composite-face centered type design and modeled by response surface methodology (RSM). The Ti and TiN etch experiments are carried out in a Lam Research Rainbow 4600 single wafer parallel plate metal etcher. For the Ti etch process, the effects of variation of the process parameters such as Cl2, N2 gas flow, RF power and reaction pressure on output responses, etch rate and etch uniformity, are investigated. For TiN etch process, BCl3 gas flow is added as a factor in addition to the factors listed above. A statistical analysis software package, JMP, is used to design experiment and analyze the results. The factors are normalized with respect to center point for the design and analysis of the experiment in order to compare the relative significance of the model terms. Using the etch rate and uniformity data obtained from the experiment, a quadratic model is developed for etch rate and uniformity for each rate and uniformity data obtained from the experiment, a quadratic model is developed for etch rate and uniformity for each of the films. From the coefficients of the models thus developed, it is easy to determine the relative influence of the first and second order effects of factors, and two factor interactions on the etch rate and uniformity response. Contour plots, which are helpful in determining the optimum process window, are generated for both etch rate and uniformity factors. Addition of nitrogen is found to decrease the etch rate due to dilution effect. The reaction pressure decreases the etch rate probably due to loss of energies of radicals, ions and electrons. Increasing of all the factors except nitrogen flow lead to better etch uniformity. Increase in nitrogen flow is causing poor uniformity probably due to dilution of etchant species leading to across-the-wafer nonuniformity.

  1. Black Silicon formation using dry etching for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Murias, D. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Reyes-Betanzo, C., E-mail: creyes@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Moreno, M.; Torres, A.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R.; Soriano, M. [Universidad Autonoma de Ciudad Juarez, Chihuahua (Mexico); Lucas, J. [Instituto Tecnologico de Tehuacan, Puebla (Mexico); Cabarrocas, P. Roca i [Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, Palaiseau (France)

    2012-09-20

    A study on the formation of Black Silicon on crystalline silicon surface using SF{sub 6}/O{sub 2} and SF{sub 6}/O{sub 2}/CH{sub 4} based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  2. Ion beam etching of multilevel masking layers written by two-photon lithography

    Science.gov (United States)

    Schmitt, Jana; Hengsbach, Stefan; Bade, Klaus; Wallrabe, Ulrike; Völklein, Friedemann

    2017-07-01

    Ion beam etching (IBE) provides high surface quality. Finding suitable masking layers is one of the key issues for process optimization. In case of high-intensity and long-term IBE conventional photoresists are not appropriate as masking layers. As an alternative in terms of thermal durability, photoresist masking layers polymerized with two-photon lithography were investigated here and their IBE etch rates were measured. A hard bake (200 °C) lowered them due to higher crosslinking without an alteration of the structure shapes. Two-photon lithography enables the fabrication of multilevel structures which can be etched in one process step. Two types of 3D masking layers were transferred into fused silica to demonstrate this approach. Diffractive structures were chosen because their diffraction efficiency benefits from the high surface quality provided by IBE and it is influenced by fabrication induced deviations of the geometry: 3D line gratings with overlapping photoresist areas are a new approach to avoid delamination problems without the necessity of the integration of unwanted gaps into the resist patterns. Measurements proved good agreement of the diffraction efficiency with simulated results, differ only by 1.14%. The transfer of blazed grating structures illustrated the effect of the angle dependence of the etch rate. The transferred structures showed good agreement with the step heights forecast on the basis of process selectivity.

  3. Magnetic field effect on Al etching in a chlorine plasma discharge

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byungwhan; Lee, Dukwoo; Han, Dongil [Sejong University, Seoul (Korea, Republic of)

    2005-02-15

    The effect of a magnetic field on aluminum films is examined under various plasma conditions. For this, the etch process was characterized by a 2{sup 6-1} fractional factorial experiment. The experimental ranges of six process parameters include 50 - 250 W for the radio frequency power, 10 - 100 Torr for the pressure, 10 - 100 G for the magnetic field strength, 10 - 70 sccm for the Cl{sub 2} flow rate, 20 - 80 sccm for the BCl{sub 3} flow rate, and 20 - 80 sccm for the N{sub 2} flow rate. Relationships between the process parameters and the etch rate were modeled using a backpropagation neural network. To test the appropriateness of the trained model, we conducted 12 additional experiments. The increase in the etch rate with increasing magnetic field strength was attributed to an enhanced plasma density. The dc bias facilitated the interpretation of parameter effects. In particular, the increased etch rate at lower pressure was ascribed to the enhanced ion bombardment that occurred at a large magnetic field strength.

  4. Double hexagonal graphene ring synthesized using a growth-etching method

    Science.gov (United States)

    Liu, Jinyang; Xu, Yangyang; Cai, Hongbing; Zuo, Chuandong; Huang, Zhigao; Lin, Limei; Guo, Xiaomin; Chen, Zhendong; Lai, Fachun

    2016-07-01

    Precisely controlling the layer number, stacking order, edge configuration, shape and structure of graphene is extremely challenging but highly desirable in scientific research. In this report, a new concept named the growth-etching method has been explored to synthesize a graphene ring using the chemical vapor deposition process. The graphene ring is a hexagonal structure, which contains a hexagonal exterior edge and a hexagonal hole in the centre region. The most important concept introduced here is that the oxide nanoparticle derived from annealing is found to play a dual role. Firstly, it acts as a nucleation site to grow the hexagonal graphene domain and then it works as a defect for etching to form a hole. The evolution process of the graphene ring with the etching time was carefully studied. In addition, a double hexagonal graphene ring was successfully synthesized for the first time by repeating the growth-etching process, which not only confirms the validity and repeatability of the method developed here but may also be further extended to grow unique graphene nanostructures with three, four, or even tens of graphene rings. Finally, a schematic model was drawn to illustrate how the double hexagonal graphene ring is generated and propagated. The results shown here may provide valuable guidance for the design and growth of unique nanostructures of graphene and other two-dimensional materials.

  5. Histologic Evaluation of Human Pulp Response to Total Etch and Self Etch Adhesive Systems

    OpenAIRE

    Malekipour, Mohammad Reza; Razavi, Sayed Mohammad; Khazaei, Saber; Kazemi, Shantia; Behnamanesh, Maryam; Shirani, Farzaneh

    2013-01-01

    Background To investigate pulp response to the application of two types adhesive systems (total-etch and self-etch) in human premolar teeth. Materials and Methods Cavities limited to enamel walls in all margins with 2.5 mm depth were prepared on buccal surfaces of thirty three human premolars. The cavities were treated with the following adhesive. Single Bond (SB) and Prompt L-Pop (PLP). The teeth were extracted after 30 days and prepared due to histological technique. Results Pulp responses ...

  6. 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching

    Directory of Open Access Journals (Sweden)

    Ji-Myung Shim

    2012-01-01

    Full Text Available For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE on acidic-textured multicrystalline silicon (mc-Si wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE, they have a drop in V oc and FF. RIE texturing with a proper DRE had sufficiently higher short circuit current (Isc than acidic-textured samples without a drop in open circuit voltage (V oc . And in order to improve efficiency of mc-Si solar cell, we applied RIE texturing with optimized DRE condition to selective emitter structure. In comparison with the acidic-textured solar cells, RIE-textured solar cells have above 200 mA absolute gain in Isc. And optimized RIE samples with a DRE by HNO3/HF mixture showed 17.6% conversion efficiency, which were made using an industrial screen printing process with selective emitter structure.

  7. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    Science.gov (United States)

    Köllensperger, P. A.; Karl, W. J.; Ahmad, M. M.; Pike, W. T.; Green, M.

    2012-06-01

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant.

  8. Laser surface pretreatment of 100Cr6 bearing steel – Hardening effects and white etching zones

    Energy Technology Data Exchange (ETDEWEB)

    Buling, Anna, E-mail: a.buling@hs-osnabrueck.de [Faculty of Engineering and Computer Science, University of Applied Sciences, 49009 Osnabrück (Germany); Sändker, Hendrik; Stollenwerk, Jochen [Fraunhofer Institute for Laser Technology ILT, Steinbachstrasse 15, 52074 Aachen (Germany); Krupp, Ulrich; Hamann-Steinmeier, Angela [Faculty of Engineering and Computer Science, University of Applied Sciences, 49009 Osnabrück (Germany)

    2016-08-15

    Highlights: • Laser surface pretreatment of the bearing steel 100Cr6 is performed. • Microstructural changes of the surface are examined by light microscopy and SEM. • Topographical changes are observed using white light interferometry. • Micro-hardness testing show the existence of very hard white etching zones (WEZ). • WEZ are attributed to near-surface reaustenitization and rapid quenching. • Dark etching zones (DEZ) are found at the laser path edges after laser pretreatment. - Abstract: In order to achieve a surface pretreatment of the bearing steel 100Cr6 (1–1.5 wt.% Cr) a laser-based process was used. The obtained modification may result in an optimization of the adhesive properties of the surface with respect to an anticorrosion polymer coating on the basis of PEEK (poly-ether-ether-ketone), which is applied on the steel surface by a laser melting technique. This work deals with the influence of the laser-based pretreatment regarding the surface microstructure and the micro-hardness of the steel, which has been examined by scanning electron microscopy (SEM), light microscopy and automated micro-hardness testing. The most suitable parameter set for the laser-based pretreatment leads to the formation of very hard white etching zones (WEZ) with a thickness of 23 μm, whereas this pretreatment also induces topographical changes. The occurrence of the white etching zones is attributed to near-surface re-austenitization and rapid quenching. Moreover, dark etching zones (DEZ) with a thickness of 32 μm are found at the laser path edges as well as underneath the white etching zones (WEZ). In these areas, the hardness is decreased due to the formation of oxides as a consequence of re-tempering.

  9. Degradation in the Fatigue Strength of Dentin by Cutting, Etching and Adhesive Bonding

    Science.gov (United States)

    Lee, H.-H.; Majd, H.; Orrego, S.; Majd, B.; Romberg, E.; Mutluay, M.M.; Arola, D.

    2014-01-01

    The processes involved in placing resin composite restorations may degrade the fatigue strength of dentin and increase the likelihood of fractures in restored teeth. Objective The objective of this study was to evaluate the relative changes in strength and fatigue behavior of dentin caused by bur preparation, etching and resin bonding procedures using a 3-step system. Methods Specimens of dentin were prepared from the crowns of unrestored 3rd molars and subjected to either quasi-static or cyclic flexural loading to failure. Four treated groups were prepared including dentin beams subjected to a burr treatment only with a conventional straight-sided bur, or etching treatment only. An additional treated group received both bur and etching treatments, and the last was treated by bur treatment and etching, followed by application of a commercial resin adhesive. The control group consisted of “as sectioned” dentin specimens. Results Under quasi-static loading to failure there was no significant difference between the strength of the control group and treated groups. Dentin beams receiving only etching or bur cutting treatments exhibited fatigue strengths that were significantly lower (p≤0.0001) than the control; there was no significant difference in the fatigue resistance of these two groups. Similarly, the dentin receiving bur and etching treatments exhibited significantly lower (p≤0.0001) fatigue strength than that of the control, regardless of whether an adhesive was applied. Significance The individual steps involved in the placement of bonded resin composite restorations significantly decrease the fatigue strength of dentin, and application of a bonding agent does not increase the fatigue strength of dentin. PMID:24985539

  10. Restructured graphene sheets embedded carbon film by oxygen plasma etching and its tribological properties

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Meiling [Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Diao, Dongfeng, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Yang, Lei [Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Fan, Xue [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2015-12-01

    Highlights: • Oxygen plasma etching was developed to improve tribological properties of GSEC film. • Etching restructured 3 nm top layer with smaller crystallite size and higher sp{sup 3} fraction. • The etched film had smoother surface, enhanced mechanical properties, longer wear life. • High electrical conductivity and strong magnetism were retained after etching. - Abstract: An oxygen plasma etching technique was introduced for improving the tribological properties of the graphene sheets embedded carbon (GSEC) film in electron cyclotron resonance plasma processing system. The nanostructural changing in the film caused by oxygen plasma etching was examined by transmission electron microscope, Raman spectroscopy and X-ray photoelectron spectroscopy, showing that the 3 nm thick top surface layer was restructured with smaller graphene nanocrystallite size as well as higher sp{sup 3} bond fraction. The surface roughness, mechanical behavior and tribological properties of the original GSEC and oxygen plasma treated GSEC films were compared. The results indicated that after the oxygen plasma treatment, the average roughness decreased from 20.8 ± 1.1 nm to 1.9 ± 0.1 nm, the hardness increased from 2.3 ± 0.1 GPa to 2.9 ± 0.1 GPa, the nanoscratch depth decreased from 64.5 ± 5.4 nm to 9.9 ± 0.9 nm, and the wear life increased from 930 ± 390 cycles to more than 15,000 frictional cycles. The origin of the improved tribological behavior was ascribed to the 3 nm thick graphene nanocrystallite film. This finding can be expected for wide applications in nanoscale surface engineering.

  11. Er:YAG laser radiation etching of enamel

    Science.gov (United States)

    Dostalova, Tatjana; Jelinkova, Helena; Krejsa, Otakar; Hamal, Karel; Kubelka, Jiri; Prochazka, Stanislav

    1996-12-01

    This study compares the effects of acid treatment and Er:YAG laser radiation on the enamel. The permanent human molars were used. Oval cavities in the buccal surface were prepared and the edges of cavities were irradiated by Er:YAG radiation. The energy of laser was 105 mJ and repetition rate 1 Hz. The radiation was focused by CaF2 lens and the sample was placed in the focus. Ten samples were etched by 35 percent phosphoric acid during 60 s. Than cavities were filled with composite resin following manufacturers directions. By laser etching the structure enamel in section was rougher. The optimal connection between the enamel and composite resin was achieved in 75 percent by acid etching and in 79.2 percent by Er:YAG laser etching. Er:YAG laser etching could be alternative method for etching of enamel.

  12. Track-etched membrane: dynamics of pore formation

    Science.gov (United States)

    Ferain, E.; Legras, R.

    1994-02-01

    The dynamics of pore formation during etching of heavy ion (Ar 9+ - 4.5 MeV/amu) irradiated bisphenol-A polycarbonate (PC) and polyethylene terephthalate (PET) films is determined by a conductivity cell. This work presents the theoretical basis of this method and describes the experimental procedure. The obtained results allow the determination of the track ( Vt) and bulk ( Vg) etch rates, and an estimate of the damage zone diameter in PC before etching.

  13. Modification of etching patterns in bovine dental enamel.

    Science.gov (United States)

    Lees, S; Trombly, P L; Skobe, Z; Gariepy, E E; Trull, A F

    1979-08-01

    It is presumed that the etching pattern is controlled by the residual organic content of dental enamel. Pretreatment with 1.ON NaOH sould remove the organic material and modify the etching pattern. SEM studies and other tests for physical and chemical properties show that the predicted modification of the etching pattern, when the tooth surface is pretreated with NaOH solution, occurs apparently without other changes or properties.

  14. Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions

    Science.gov (United States)

    Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

    2017-04-01

    Indium arsenide (InAs) is the candidate of choice as a new channel material for application in future technologies beyond the Si-based electronic devices because it has a much higher electron mobility than silicon. In this study, the oxidation and etching behaviors of InAs (100) in various acidic and basic solutions, such as HF, HCl, H2SO4, NaOH, KOH, and NH4OH, were investigated. In addition, the effect of pH on the oxidation and etching reactions taking place on the InAs surface was studied using solutions with a pH ranging from 1 to 13. It was observed that the oxidation of the InAs surface was hindered in acidic solutions, which was attributed to the dissolution of the oxidized surface layer. In particular, the treatment of the InAs surface using a strongly acidic solution with a pH of less than 3 produced an oxide-free surface due to the predominant etching of the InAs surface. The addition of H2O2 to the acidic solutions greatly increased the etching rate of the InAs surface, which suggests that the oxidation process is the rate-limiting step in the sequence of reactions that occur during the etching of the InAs surface in acidic solutions. The etching of InAs was suppressed in neutral solutions, which resulted in the formation of a relatively thicker oxide layer on the surface, and mild etching of the InAs surface took place in basic solutions. However, in basic solutions, the addition of H2O2 did not significantly contribute to the increase of the oxidation state of the InAs surface; thus, its effect on the etching rate of InAs was smaller than in acidic solutions.

  15. Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

    Science.gov (United States)

    2014-01-01

    Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively. PMID:25249824

  16. Lateral electrochemical etching of III-nitride materials for microfabrication

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jung

    2017-02-28

    Conductivity-selective lateral etching of III-nitride materials is described. Methods and structures for making vertical cavity surface emitting lasers with distributed Bragg reflectors via electrochemical etching are described. Layer-selective, lateral electrochemical etching of multi-layer stacks is employed to form semiconductor/air DBR structures adjacent active multiple quantum well regions of the lasers. The electrochemical etching techniques are suitable for high-volume production of lasers and other III-nitride devices, such as lasers, HEMT transistors, power transistors, MEMs structures, and LEDs.

  17. State of the art etch-and-rinse adhesives

    OpenAIRE

    Pashley, David H.; Tay, Franklin R.; Breschi, Lorenzo; Tjäderhane, Leo; Carvalho, Ricardo M.; Carrilho, Marcela; Tezvergil-Mutluay, Arzu

    2010-01-01

    Etch-and-rinse adhesive systems are the oldest of the multi-generation evolution of resin bonding systems. In the 3-step version, they involve acid-etching, priming and application of a separate adhesive. Each step can accomplish multiple goals. This review explores the therapeutic opportunities of each separate step. Acid-etching, using 32-37% phosphoric acid (pH 0.1-0.4) not only simultaneously etches enamel and dentin, but the low pH kills many residual bacteria. Some etchants include anti...

  18. Effects of etching time on enamel bond strengths.

    Science.gov (United States)

    Triolo, P T; Swift, E J; Mudgil, A; Levine, A

    1993-12-01

    This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

  19. Two-Layer Microstructures Fabricated by One-Step Anisotropic Wet Etching of Si in KOH Solution

    Directory of Open Access Journals (Sweden)

    Han Lu

    2016-01-01

    Full Text Available Anisotropic etching of silicon in potassium hydroxide (KOH is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this residue as a second masking layer to fabricate two-layer complex structures. Square patterns with size in the range of 15–150 μm and gap distance of 5 μm have been designed and tested. The residue masking layer appears when the substrate is over-etched in hydrofluoric acid (HF solution over a threshold. The two-layer structures of micropyramids surrounded by wall-like structures are obtained according to the two different masking layers of SiO2 and residue. The residue masking layer is stable and can survive over KOH etching for long time to achieve deep Si etching. The process parameters of etchant concentration, temperature, etching time and pattern size have been investigated. With well-controlled two-layer structures, useful structures could be designed for applications in plasmonic and microfluidic devices in the future.

  20. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Science.gov (United States)

    Bai, Yang; Jia, Rui; Wu, De-Qi; Jin, Zhi; Liu, Xin-Yu; Lin, Mei-Yu

    2013-08-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H3PO4), and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  1. Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

    Institute of Scientific and Technical Information of China (English)

    Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu; Lin Mei-Yu

    2013-01-01

    Mesa etching technology is considerably important in the Gunn diode fabrication process.In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study.We use two chlorine-based etchants,one is HCl-based solution (HCl/H3PO4),and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system (ICP).The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall,whilst ICP system (Cl2-based) offers an excellent and uniform vertical sidewall,and the over-etching is tiny on the top and the bottom of mesa.And the fabricated mesas of Gunn diodes have average etching rates of ~ 0.6 μm/min and ~ 1.2 μm/min,respectively.The measured data show that the current of Gunn diode by wet etching is lower than that by ICP,and the former has a higher threshold voltage.It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.

  2. Ultrastructure of the surface of dental enamel with molar incisor hypomineralization (MIH) with and without acid etching.

    Science.gov (United States)

    Bozal, Carola B; Kaplan, Andrea; Ortolani, Andrea; Cortese, Silvina G; Biondi, Ana M

    2015-01-01

    The aim of the present work was to analyze the ultrastructure and mineral composition of the surface of the enamel on a molar with MIH, with and without acid etching. A permanent tooth without clinical MIH lesions (control) and a tooth with clinical diagnosis of mild and moderate MIH, with indication for extraction, were processed with and without acid etching (H3PO4 37%, 20") for observation with scanning electron microscope (SEM) ZEISS (Supra 40) and mineral composition analysis with an EDS detector (Oxford Instruments). The control enamel showed normal prismatic surface and etching pattern. The clinically healthy enamel on the tooth with MIH revealed partial loss of prismatic pattern. The mild lesion was porous with occasional cracks. The moderate lesion was more porous, with larger cracks and many scales. The mineral composition of the affected surfaces had lower Ca and P content and higher O and C. On the tooth with MIH, even on normal looking enamel, the demineralization does not correspond to an etching pattern, and exhibits exposure of crystals with rods with rounded ends and less demineralization in the inter-prismatic spaces. Acid etching increased the presence of cracks and deep pores in the adamantine structure of the enamel with lesion. In moderate lesions, the mineral composition had higher content of Ca, P and Cl. Enamel with MIH, even on clinically intact adamantine surfaces, shows severe alterations in the ultrastructure and changes in ionic composition, which affect the acid etching pattern and may interfere with adhesion.

  3. A Twice Electrochemical-Etching Method to Fabricate Superhydrophobic-Superhydrophilic Patterns for Biomimetic Fog Harvest.

    Science.gov (United States)

    Yang, Xiaolong; Song, Jinlong; Liu, Junkai; Liu, Xin; Jin, Zhuji

    2017-08-18

    Superhydrophobic-superhydrophilic patterned surfaces have attracted more and more attention due to their great potential applications in the fog harvest process. In this work, we developed a simple and universal electrochemical-etching method to fabricate the superhydrophobic-superhydrophilic patterned surface on metal superhydrophobic substrates. The anti-electrochemical corrosion property of superhydrophobic substrates and the dependence of electrochemical etching potential on the wettability of the fabricated dimples were investigated on Al samples. Results showed that high etching potential was beneficial for efficiently producing a uniform superhydrophilic dimple. Fabrication of long-term superhydrophilic dimples on the Al superhydrophobic substrate was achieved by combining the masked electrochemical etching and boiling-water immersion methods. A long-term wedge-shaped superhydrophilic dimple array was fabricated on a superhydrophobic surface. The fog harvest test showed that the surface with a wedge-shaped pattern array had high water collection efficiency. Condensing water on the pattern was easy to converge and depart due to the internal Laplace pressure gradient of the liquid and the contact angle hysteresis contrast on the surface. The Furmidge equation was applied to explain the droplet departing mechanism and to control the departing volume. The fabrication technique and research of the fog harvest process may guide the design of new water collection devices.

  4. Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

    Science.gov (United States)

    Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.; Ranade, R.

    2002-01-01

    Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

  5. Acid-etched microtexture for enhancement of bone growth into porous-coated implants.

    Science.gov (United States)

    Hacking, S A; Harvey, E J; Tanzer, M; Krygier, J J; Bobyn, J D

    2003-11-01

    We designed an in vivo study to determine if the superimposition of a microtexture on the surface of sintered titanium beads affected the extent of bone ingrowth. Cylindrical titanium intramedullary implants were coated with titanium beads to form a porous finish using commercial sintering techniques. A control group of implants was left in the as-sintered condition. The test group was etched in a boiling acidic solution to create an irregular surface over the entire porous coating. Six experimental dogs underwent simultaneous bilateral femoral intramedullary implantation of a control implant and an acid etched implant. At 12 weeks, the implants were harvested in situ and the femora processed for undecalcified, histological examination. Eight transverse serial sections for each implant were analysed by backscattered electron microscopy and the extent of bone ingrowth was quantified by computer-aided image analysis. The extent of bone ingrowth into the control implants was 15.8% while the extent of bone ingrowth into the etched implants was 25.3%, a difference of 60% that was statistically significant. These results are consistent with other research that documents the positive effect of microtextured surfaces on bone formation at an implant surface. The acid etching process developed for this study represents a simple method for enhancing the potential of commonly available porous coatings for biological fixation.

  6. Photolithography and Selective Etching of an Array of Quartz Tuning Fork Resonators with Improved Impact Resistance Characteristics

    Science.gov (United States)

    Lee, Sungkyu

    2001-08-01

    Quartz tuning fork blanks with improved impact-resistant characteristics for use in Qualcomm mobile station modem (MSM)-3000 central processing unit (CPU) chips for code division multiple access (CDMA), personal communication system (PCS), and global system for mobile communication (GSM) systems were designed using finite element method (FEM) analysis and suitable processing conditions were determined for the reproducible precision etching of a Z-cut quartz wafer into an array of tuning forks. Negative photoresist photolithography for the additive process was used in preference to positive photoresist photolithography for the subtractive process to etch the array of quartz tuning forks. The tuning fork pattern was transferred via a conventional photolithographical chromium/quartz glass template using a standard single-sided aligner and subsequent negative photoresist development. A tightly adhering and pinhole-free 600/2000 Å chromium/gold mask was coated over the developed photoresist pattern which was subsequently stripped in acetone. This procedure was repeated on the back surface of the wafer. With the protective metallization area of the tuning fork geometry thus formed, etching through the quartz wafer was performed at 80°C in a ± 1.5°C controlled bath containing a concentrated solution of ammonium bifluoride to remove the unwanted areas of the quartz wafer. The quality of the quartz wafer surface finish after quartz etching depended primarily on the surface finish of the quartz wafer prior to etching and the quality of quartz crystals used. Selective etching of a 100 μm quartz wafer could be achieved within 90 min at 80°C. A selective etching procedure with reproducible precision has thus been established and enables the photolithographic mass production of miniature tuning fork resonators.

  7. Pre-etching vs. grinding in promotion of adhesion to intact enamel using self-etch adhesives.

    Science.gov (United States)

    Nazari, Amir; Shimada, Yasushi; Sadr, Alireza; Tagami, Junji

    2012-01-01

    This study was aimed to determine the effectiveness of grinding and pre-etching in promotion of adhesion to human intact enamel using the self-etch adhesive (SEA) Adper Easy Bond (3M ESPE). Etch-and-rinse adhesive Adper Single Bond (3M ESPE) served as control. Composite cylinders (AP-X Kuraray) were built and after 24 h micro-shear bond strengths (MSBS) were measured. Bonding interfaces were evaluated under scanning electron microscope (SEM). For evaluation of average roughness (Ra) and morphological analysis, treated enamel surfaces were observed under SEM and confocal laser scanning microscope (CLSM) with 3D surface profiling. Highest bond strengths were obtained by pre-etching and grinding showed a less significant role. Phosphoric acid (PA) etching compare to grinding created significantly rougher surface (Ra: 0.72 and 0.43 µm respectively). Therefore, this study recommends pre-etching the intact enamel prior to application of the adhesive instead of grinding.

  8. Synthesis and Characterization of Chemically Etched Nanostructured Silicon

    KAUST Repository

    Mughal, Asad Jahangir

    2012-05-01

    Silicon is an essential element in today’s modern world. Nanostructured Si is a more recently studied variant, which has currently garnered much attention. When its spatial dimensions are confined below a certain limit, its optical properties change dramatically. It transforms from an indirect bandgap material that does not absorb or emit light efficiently into one which can emit visible light at room temperatures. Although much work has been conducted in understanding the properties of nanostructured Si, in particular porous Si surfaces, a clear understanding of the origin of photoluminescence has not yet been produced. Typical synthesis approaches used to produce nanostructured Si, in particular porous Si and nanocrystalline Si have involved complex preparations used at high temperatures, pressures, or currents. The purpose of this thesis is to develop an easier synthesis approach to produce nanostructured Si as well as arrive at a clearer understanding of the origin of photoluminescence in these systems. We used a simple chemical etching technique followed by sonication to produce nanostructured Si suspensions. The etching process involved producing pores on the surface of a Si substrate in a solution containing hydrofluoric acid and an oxidant. Nanocrystalline Si as well as nanoscale amorphous porous Si suspensions were successfully synthesized using this process. We probed into the phase, composition, and origin of photoluminescence in these materials, through the use of several characterization techniques. TEM and SEM were used to determine morphology and phase. FT-IR and XPS were employed to study chemical compositions, and steady state and time resolved optical spectroscopy techniques were applied to resolve their photoluminescent properties. Our work has revealed that the type of oxidant utilized during etching had a significant impact on the final product. When using nitric acid as the oxidant, we formed nanocrystalline Si suspensions composed of

  9. An Experimental Study of the Quantum Efficiency and Topology of Copper Photocathode Due to Plasma Cleaning and Etching

    CERN Document Server

    Palmer, Denni T; Kirby, Robert

    2005-01-01

    We have developed an experimental research program to the study of the photoemission properties of copper photocathodes as a function of various plasma cleaning/etching parameters. The quantum efficiency, QE, and topology, Ra and Rpp, of Copper Photocathodes, , will be monitored while undergoing plasma cleaning/etching process. We will monitor the QE as a function of time for the various test coupons while we optimize the various plasma processing parameters. In addition, surface topology, will be studied to determine the suitability of the cleaning/etching process to produce an acceptable photoemitter. We propose to use two metrics in the evaluation of the plasma cleaning process as an acceptable cleaning method for metallic photocathodes, Quantum Efficiency versus Wavelength and Surface roughness: Ra and Rpp represent the Average Roughness and Peak to Peak Roughness parameters, respectively.

  10. Gate oxide punching thru mechanism in plasma dry etching

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The punching thru mechanism of gate oxide (thickness about 15A) was investi- gated. Because of the thin thickness of gate oxide, gate oxide punching thru may easily happen during the plasma process. It was found that what caused the punching thru was not only the selectivity of poly-silicon/oxide but also the pattern topography. We used the basic SRAM pattern to check this topography effect, and found that gate oxide located at the narrow spacing of two parallel serpentine lines was the most easily punched thru. What caused the topography effect was the starvation of oxygen in these places which were induced by the residue of poly-silicon and enhanced by electron shading effect. So, to solve the issue of gate oxide punching thru, firstly the selectivity should be enough, secondly we should pay attention to the etching pattern topography.

  11. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

    Science.gov (United States)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

    2017-02-01

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen

  12. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma.

    Science.gov (United States)

    Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L; Joseph, Eric A; Oehrlein, Gottlieb S

    2017-02-07

    With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar(+) ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar(+) ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen

  13. Highly selective etching of SnO2 absorber in binary mask structure for extreme ultra-violet lithography.

    Science.gov (United States)

    Lee, Soo Jin; Jung, Chang Yong; Park, Sung Jin; Hwangbo, Chang Kweun; Seo, Hwan Seok; Kim, Sung Soo; Lee, Nae-Eung

    2012-04-01

    Among the core EUVL (extreme ultra-violet lithography) technologies for nanoscale patterning below the 30 nm node for Si chip manufacturing, new materials and fabrication processes for high-performance EUVL masks are of considerable importance due to the use of new reflective optics. In this work, the selective etching of SnO2 (tin oxide) as a new absorber material, with high EUV absorbance due to its large extinction coefficient, for the binary mask structure of SnO2 (absorber layer)/Ru (capping/etch stop layer)/Mo-Si multilayer (reflective layer)/Si (substrate), was investigated. Because infinitely high selectivity of the SnO2 layer to the Ru ESL is required due to the ultrathin nature of the Ru layer, various etch parameters were assessed in the inductively coupled Cl2/Ar plasmas in order to find the process window required for infinitely high etch selectivity of the SnO2 layer. The results showed that the gas flow ratio and V(dc) value play an important role in determining the process window for the infinitely high etch selectivity of SnO2 to Ru ESL. The high EUV-absorbance SnO2 layer, patternable by a dry process, allows a smaller absorber thickness, which can mitigate the geometric shadowing effects observed for high-performance binary EUVL masks.

  14. Combined dry plasma etching and online metrology for manufacturing highly focusing x-ray mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Berujon, S., E-mail: berujon@esrf.eu; Ziegler, E., E-mail: ziegler@esrf.eu; Cunha, S. da; Bonneau, F.; Baker, R.; Clement, J.-M.; Perez, M.; Thuaudet, S.; Malandrino, G.; Vivo, A.; Lantelme, B.; Barrett, R.; Susini, J. [European Synchrotron Radiation Facility, CS40220, 38043 Grenoble Cedex 9 (France)

    2016-07-27

    A new figuring station was designed and installed at the ESRF beamline BM05. It allows the figuring of mirrors within an iterative process combining the advantage of online metrology with dry etching. The complete process takes place under a vacuum environment to minimize surface contamination while non-contact surfacing tools open up the possibility of performing at-wavelength metrology and eliminating placement errors. The aim is to produce mirrors whose slopes do not deviate from the stigmatic profile by more than 0.1 µrad rms while keeping surface roughness in the acceptable limit of 0.1-0.2 nm rms. The desired elliptical mirror surface shape can be achieved in a few iterations in about a one day time span. This paper describes some of the important aspects of the process regarding both the online metrology and the etching process.

  15. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  16. FIB Secondary Etching Method for Fabrication of Fine CNT Forest Metamaterials

    Science.gov (United States)

    Pander, Adam; Hatta, Akimitsu; Furuta, Hiroshi

    2017-10-01

    Anisotropic materials, like carbon nanotubes (CNTs), are the perfect substitutes to overcome the limitations of conventional metamaterials; however, the successful fabrication of CNT forest metamaterial structures is still very challenging. In this study, a new method utilizing a focused ion beam (FIB) with additional secondary etching is presented, which can obtain uniform and fine patterning of CNT forest nanostructures for metamaterials and ranging in sizes from hundreds of nanometers to several micrometers. The influence of the FIB processing parameters on the morphology of the catalyst surface and the growth of the CNT forest was investigated, including the removal of redeposited material, decreasing the average surface roughness (from 0.45 to 0.15 nm), and a decrease in the thickness of the Fe catalyst. The results showed that the combination of FIB patterning and secondary etching enabled the growth of highly aligned, high-density CNT forest metamaterials. The improvement in the quality of single-walled CNTs (SWNTs), defined by the very high G/D peak ratio intensity of 10.47, demonstrated successful fine patterning of CNT forest for the first time. With a FIB patterning depth of 10 nm and a secondary etching of 0.5 nm, a minimum size of 150 nm of CNT forest metamaterials was achieved. The development of the FIB secondary etching method enabled for the first time, the fabrication of SWNT forest metamaterials for the optical and infrared regime, for future applications, e.g., in superlenses, antennas, or thermal metamaterials.

  17. Effectiveness of Two Self-Etchings Bonded Clinically in Caries Affected Dentin with Homogeneous Smear Layer

    Directory of Open Access Journals (Sweden)

    Roberto Pinna

    2015-01-01

    Full Text Available Aim. To examine the interface of two self-etchings in carious affected dentin (CAD, under clinical conditions. Materials and Methods. Class I cavities were prepared in 21 carious premolars, refining them by the use of a fine diamond bur in order to create similar smear layer interference. The mild self-etching Clearfil SE Bond (CSE, pH = 2.0, and the strong Tyrian SPE-One Step Plus (TSO, pH = 0.5, were applied followed by a composite. Teeth were extracted and processed for TEM. The primer’s osmolarity of the self-etchings was also calculated using a microosmometer. Results. CSE hybrid layer retained smear layer residues and scattered crystallites as an effect of the mild acidity. A high presence of hydroxyapatite still protected the affected fibres within the hybrid layer. CSE primer demonstrated values of 3220 mOsm/kg. TSO interdiffusion showed strong demineralization. Resin tags were not formed in the dentinal tubules which remained obstructed by crystals. However, dissolution of peritubular dentin and porosities were observed in the intertubular regions. The osmolarity of TSO was 8200 mOsm/kg. Conclusion. Increasing the acidity and osmolarity of the self-etchings increases interference in the homogeneous reinforcement of CAD, which may predispose the hybrid layer to instability and hydrolytic degradation overtime.

  18. Laser surface pretreatment of 100Cr6 bearing steel - Hardening effects and white etching zones

    Science.gov (United States)

    Buling, Anna; Sändker, Hendrik; Stollenwerk, Jochen; Krupp, Ulrich; Hamann-Steinmeier, Angela

    2016-08-01

    In order to achieve a surface pretreatment of the bearing steel 100Cr6 (1-1.5 wt.% Cr) a laser-based process was used. The obtained modification may result in an optimization of the adhesive properties of the surface with respect to an anticorrosion polymer coating on the basis of PEEK (poly-ether-ether-ketone), which is applied on the steel surface by a laser melting technique. This work deals with the influence of the laser-based pretreatment regarding the surface microstructure and the micro-hardness of the steel, which has been examined by scanning electron microscopy (SEM), light microscopy and automated micro-hardness testing. The most suitable parameter set for the laser-based pretreatment leads to the formation of very hard white etching zones (WEZ) with a thickness of 23 μm, whereas this pretreatment also induces topographical changes. The occurrence of the white etching zones is attributed to near-surface re-austenitization and rapid quenching. Moreover, dark etching zones (DEZ) with a thickness of 32 μm are found at the laser path edges as well as underneath the white etching zones (WEZ). In these areas, the hardness is decreased due to the formation of oxides as a consequence of re-tempering.

  19. Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    R. W. Wu

    2016-02-01

    Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

  20. Electrochemical impedance spectroscopy analysis of porous silicon prepared by photo-electrochemical etching: current density effect

    Science.gov (United States)

    Husairi, F. S.; Rouhi, J.; Eswar, K. A.; Zainurul, A. Z.; Rusop, M.; Abdullah, S.

    2014-09-01

    Electrical impedance characteristics of porous silicon nanostructures (PSiNs) in frequency function were studied. PSiNs were prepared through photo-electrochemical etching method at various current densities (15-40 mA/cm2) and constant etching time. The atomic force microscope images of PSiNs show that pore diameter and roughness increase when current density increases to 35 mA/cm2. The surface roughness subsequently decreases because of continuous etching of pillars, and a second etching process occurs. Photoluminescence spectra show blue and red shift with increasing applied current density that is attributed to PSiNs size. Variations of electrical resistance and capacitance values of PSiNs were measured using electrochemical impedance spectroscopy analysis. These results indicate that PSiNs prepared at 20 mA/cm2 current density have uniform porous structures with a large number of pillars. Furthermore, this PSiNs structure influences large values of charge transfer resistance and double layer capacitance, indicating potential application in sensors.

  1. Influence of ageing on self-etch adhesives: one-step vs. two-step systems.

    Science.gov (United States)

    Marchesi, Giulio; Frassetto, Andrea; Visintini, Erika; Diolosà, Marina; Turco, Gianluca; Salgarello, Stefano; Di Lenarda, Roberto; Cadenaro, Milena; Breschi, Lorenzo

    2013-02-01

    The aim of this study was to evaluate microtensile bond strength (μTBS) to dentine, interfacial nanoleakage expression, and stability after ageing, of two-step vs. one-step self-etch adhesives. Human molars were cut to expose middle/deep dentine, assigned to groups (n = 15), and treated with the following bonding systems: (i) Optibond XTR (a two-step self-etch adhesive; Kerr), (ii) Clearfil SE Bond (a two-step self-etch adhesive; Kuraray), (iii) Adper Easy Bond (a one-step self-etch adhesive; 3M ESPE), and (iv) Bond Force (a one-step self-etch adhesive; Tokuyama). Specimens were processed for μTBS testing after 24 h, 6 months, or 1 yr of storage in artificial saliva at 37°C. Nanoleakage expression was examined in similarly processed additional specimens. At baseline the μTBS results ranked in the following order: Adper Easy Bond = Optibond XTR ≥Clearfil SE = Bond Force, and interfacial nanoleakage analysis showed Clearfil SE Bond = Adper Easy Bond = Optibond XTR> Bond Force. After 1 yr of storage, Optibond XTR, Clearfil SE Bond, and Adper Easy Bond showed higher μTBS and lower interfacial nanoleakage expression compared with Bond Force. In conclusion, immediate bond strength, nanoleakage expression, and stability over time were not related to the number of steps of the bonding systems, but to their chemical formulations. © 2012 Eur J Oral Sci.

  2. Direct evidence of reactive ion etching induced damages in Ge{sub 2}Sb{sub 2}Te{sub 5} based on different halogen plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Li, Juntao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Microsystem Technology Laboratory, Microsystem & Terahertz Research Center, Sichuan Province 610200 (China); Xia, Yangyang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China); Liu, Bo, E-mail: liubo@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Feng, Gaoming [United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China); Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Dan; Xu, Zhen; Wang, Weiwei [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100080 (China); Chan, Yipeng [United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 (China); Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2016-08-15

    Highlights: • The results of SEM and AFM directly showed that the surface of Cl2 etched samples were roughest with a Ge deficient damaged layer. • The XPS of Te 3d revealed the electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on CF4 etching GST films. • The sidewall of HBr etching GST is nearly vertical compared with others. • HBr is promising gas for GST etching in the fabrication of high-density memory devices. - Abstract: Chalcogenide glasses based on Ge-Te-Sb are processed using reactive ion etching (RIE) in the fabrication of phase change memory (PCM). These materials are known to be halogenated easily and apt to be damaged when exposed to halogen gas based plasmas which can cause severe halogenation-induced degradation. In this paper, we investigate the RIE induced damage of popular phase change material Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) in different halogen based plasmas (CF{sub 4}, Cl{sub 2} and HBr) highly diluted by argon. After blanket etching, results of scanning electron microscopy and atomic force microscopy directly showed that the surface of Cl{sub 2} etched samples were roughest with a Ge deficient damaged layer. X-ray photoelectron spectroscopy was performed to investigate the chemical shift of constituent elements. Selected scans over the valence band peaks of Te 3d revealed that electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on the GST etched by CF{sub 4}. The GST films masked with patterned TiN were also etched. High-resolution transmission electron microscopy and surface scan directly showed the line profile and the damaged layer. Almost vertical and smooth sidewall without damaged layer makes HBr a promising gas for GST etch in the fabrication of high-density memory devices.

  3. Electronegativity-dependent tin etching from thin films

    NARCIS (Netherlands)

    Pachecka, M.; Sturm, J.M.; Kruijs, van de R.W.E.; Lee, C.J.; Bijkerk, F.

    2016-01-01

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electron

  4. Orthodox etching of HVPE-grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  5. Microstructure, composition, and etching topography of dental ceramics.

    Science.gov (United States)

    Della Bona, Alvaro; Anusavice, Kenneth J

    2002-01-01

    Topographic analysis of etched ceramics provides qualitative surface structure information that affects micromechanical retention mechanisms. This study tested the hypothesis that the etching mechanism changes according to the type of etchant and the ceramic microstructure and composition. Quantitative and qualitative analyses of 15 dental ceramics were performed using scanning electron microscopy, back-scattered imaging, X-ray diffraction, optical profilometry, and wavelength dispersive spectroscopy based on Phi-Rho-Z correction. All ceramic specimens were polished to 1 micron with diamond compound, and the following etchants and etching times were used: ammonium bifluoride (ABF) for 1 minute, 9.6% hydrofluoric acid (HF) for 2 minutes, and 4% acidulated phosphate fluoride (APF) for 2 minutes. HF produced an irregular etching pattern in which pores were the characteristic topographic feature. ABF-etched ceramic surfaces showed mostly grooves, and APF etchant caused a buildup of surface precipitate. Core ceramics showed less topographic change after etching because of their high alumina content and low chemical reactivity. The observations suggest that the etching mechanism is different for the three etchants, with HF producing the most prominent etching pattern on all dental ceramics examined.

  6. Versatile apparatus for etching scanning tunneling microscope tips

    Science.gov (United States)

    Fiering, J. O.; Ellis, F. M.

    1990-12-01

    We have developed an apparatus for easy and consistent etching of small tips suitable for use with a scanning tunneling microscope. Its unique features are free access to the etching region and a continuous supply of electrolyte for the production of many tips in succession.

  7. Wet-Etch Figuring Optical Figuring by Controlled Application of Liquid Etchant

    Energy Technology Data Exchange (ETDEWEB)

    Britten, J

    2001-02-13

    WET-ETCH FIGURING (WEF) is an automated method of precisely figuring optical materials by the controlled application of aqueous etchant solution. This technology uses surface-tension-gradient-driven flow to confine and stabilize a wetted zone of an etchant solution or other aqueous processing fluid on the surface of an object. This wetted zone can be translated on the surface in a computer-controlled fashion for precise spatial control of the surface reactions occurring (e.g. chemical etching). WEF is particularly suitable for figuring very thin optical materials because it applies no thermal or mechanical stress to the material. Also, because the process is stress-free the workpiece can be monitored during figuring using interferometric metrology, and the measurements obtained can be used to control the figuring process in real-time--something that cannot be done with traditional figuring methods.

  8. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1985-10-11

    Disclosed is a method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg/sub 1/ in the presence of a second semiconductor material of a different composition and direct bandgap Eg/sub 2/, wherein Eg/sub 2/ > Eg/sub 1/, said second semiconductor material substantially not being etched during said method. The method comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg/sub 1/ but less than Eg/sub 2/, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  9. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, Carol I. H. (Edgewood, NM); Dishman, James L. (Albuquerque, NM)

    1987-01-01

    A method of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap Eg.sub.1 in the presence of a second semiconductor material of a different composition and direct bandgap Eg.sub.2, wherein Eg.sub.2 >Eg.sub.1, said second semiconductor material substantially not being etched during said method, comprises subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where said etchant would be ineffective for chemical etching of either material were the photons not present, said photons being of an energy greater than Eg.sub.1 but less than Eg.sub.2, whereby said first semiconductor material is photochemically etched and said second material is substantially not etched.

  10. Composition/bandgap selective dry photochemical etching of semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Ashby, C.I.H.; Dishman, J.L.

    1987-03-10

    A method is described of selectively photochemically dry etching a first semiconductor material of a given composition and direct bandgap E/sub g1/ in the presence of a second semiconductor material of a different composition and direct bandgap E/sub g2/, wherein E/sub g2/>E/sub g1/. The second semiconductor material is not substantially etched during the method, comprising subjecting both materials to the same photon flux and to the same gaseous etchant under conditions where the etchant would be ineffective for chemical etching of either material where the photons are not present, the photons being of an energy greater than E/sub g1/ but less than E/sub g2/, whereby the first semiconductor material is photochemically etched and the second material is substantially not etched.

  11. Effects of Etch-and-Rinse and Self-etch Adhesives on Dentin MMP-2 and MMP-9

    Science.gov (United States)

    Mazzoni, A.; Scaffa, P.; Carrilho, M.; Tjäderhane, L.; Di Lenarda, R.; Polimeni, A.; Tezvergil-Mutluay, A.; Tay, F.R.; Pashley, D.H.; Breschi, L.

    2013-01-01

    Auto-degradation of collagen matrices occurs within hybrid layers created by contemporary dentin bonding systems, by the slow action of host-derived matrix metalloproteinases (MMPs). This study tested the null hypothesis that there are no differences in the activities of MMP-2 and -9 after treatment with different etch-and-rinse or self-etch adhesives. Tested adhesives were: Adper Scotchbond 1XT (3M ESPE), PQ1 (Ultradent), Peak LC (Ultradent), Optibond Solo Plus (Kerr), Prime&Bond NT (Dentsply) (all 2-step etch-and-rinse adhesives), and Adper Easy Bond (3M ESPE), Tri-S (Kuraray), and Xeno-V (Dentsply) (1-step self-etch adhesives). MMP-2 and -9 activities were quantified in adhesive-treated dentin powder by means of an activity assay and gelatin zymography. MMP-2 and MMP-9 activities were found after treatment with all of the simplified etch-and-rinse and self-etch adhesives; however, the activation was adhesive-dependent. It is concluded that all two-step etch-and-rinse and the one-step self-etch adhesives tested can activate endogenous MMP-2 and MMP-9 in human dentin. These results support the role of endogenous MMPs in the degradation of hybrid layers created by these adhesives. PMID:23128110

  12. Clinical effectiveness of self-etching adhesives with or without selective enamel etching in noncarious cervical lesions: A systematic review

    Directory of Open Access Journals (Sweden)

    Wei Qin

    2014-12-01

    Conclusion: Previous enamel etching resulted in fewer marginal defects and marginal discoloration, compared with using the SE approach alone. For restoration retention, the differences between the two groups were not significant. Additional longer follow ups and large-scale investigations are expected to assess possible advantages of selective enamel etching in NCCL restorations.

  13. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-02-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

  14. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    Science.gov (United States)

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  15. Homogeneous luminescent stain etched porous silicon elaborated by a new multi-step stain etching method

    Energy Technology Data Exchange (ETDEWEB)

    Hajji, M., E-mail: mhajji2001@yahoo.fr [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia); Institut Supérieur d’Electronique et de Communication de Sfax, route Menzel Chaker Km 0.5, BP 868, Sfax 3018 (Tunisia); Khalifa, M.; Slama, S. Ben; Ezzaouia, H. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia)

    2013-11-01

    This paper presents a new method to produce porous silicon which derived from the conventional stain etching (SE) method. But instead of one etching step that leads to formation of porous layer, the substrate is subjected to an initial etching step with a duration Δt{sub 0} followed by a number of supplementary short steps that differs from a layer to another. The duration of the initial step is just the necessary time to have a homogenous porous layer on the whole surface of the substrate. It was found that this duration is largely dependent of the doping type and level of the silicon substrate. The duration of supplementary steps was kept as short as possible to prevent the formation of bubbles on the silicon surface during silicon dissolution which leads generally to inhomogeneous porous layers. It is found from surface investigation by atomic force microscopy (AFM) that multistep stain etching (MS-SE) method allows to produce homogeneous porous silicon nanostructures compared to the conventional SE method. The chemical composition of the obtained porous layers has been evaluated using Fourier transform infrared spectroscopy (FTIR). Photoluminescence (PL) measurement shows that porous layers produced by SE and MS-SE methods have comparable spectra indicating that those layers are composed of nanocrystallites with comparable sizes. But the intensity of photoluminescence of layer elaborated by MS-SE method is higher than that elaborated by the SE method. Total reflectance characteristics show that the presented method allows the production of porous silicon layers with controllable thicknesses and optical properties. Results for porous silicon layers elaborated on heavily doped n-type silicon show that the reflectance can be reduced to values less than 3% in the major part of the spectrum.

  16. Dose-rate effects on the bulk etch-rate of CR-39 track detector exposed to low-LET radiations

    CERN Document Server

    Yamauchi, T; Oda, K; Ikeda, T; Honda, Y; Tagawa, S

    1999-01-01

    The effect of gamma-rays and pulsed electrons has been investigated on the bulk etch rate of CR-39 detector at doses up to 100 kGy under various dose-rate between 0.0044 and 35.0 Gy/s. The bulk etch rate increased exponentially with the dose at every examined dose-rates. It was reveled to be strongly depend on the dose-rate: the bulk etch rate was decreased with increasing dose-rate at the same total dose. A primitive model was proposed to explain the dose-rate effect in which oxygen dissolved was assumed to dominate the damage formation process.

  17. Etching of UO{sub 2} in NF{sub 3} RF Plasma Glow Discharge

    Energy Technology Data Exchange (ETDEWEB)

    John M. Veilleux

    1999-08-01

    A series of room temperature, low pressure (10.8 to 40 Pa), low power (25 to 210 W) RF plasma glow discharge experiments with UO{sub 2} were conducted to demonstrate that plasma treatment is a viable method for decontaminating UO{sub 2} from stainless steel substrates. Experiments were conducted using NF{sub 3} gas to decontaminate depleted uranium dioxide from stainless-steel substrates. Depleted UO{sub 2} samples each containing 129.4 Bq were prepared from 100 microliter solutions of uranyl nitrate hexahydrate solution. The amorphous UO{sub 2} in the samples had a relatively low density of 4.8 gm/cm{sub 3}. Counting of the depleted UO{sub 2} on the substrate following plasma immersion was performed using liquid scintillation counting with alpha/beta discrimination due to the presence of confounding beta emitting daughter products, {sup 234}Th and {sup 234}Pa. The alpha emission peak from each sample was integrated using a gaussian and first order polynomial fit to improve quantification. The uncertainties in the experimental measurement of the etched material were estimated at about {+-} 2%. Results demonstrated that UO{sub 2} can be completely removed from stainless-steel substrates after several minutes processing at under 200 W. At 180 W and 32.7 Pa gas pressure, over 99% of all UO{sub 2} in the samples was removed in just 17 minutes. The initial etch rate in the experiments ranged from 0.2 to 7.4 {micro}m/min. Etching increased with the plasma absorbed power and feed gas pressure in the range of 10.8 to 40 Pa. A different pressure effect on UO{sub 2} etching was also noted below 50 W in which etching increased up to a maximum pressure, {approximately}23 Pa, then decreased with further increases in pressure.

  18. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  19. E-beam inspection of EUV mask defects: To etch or not to etch?

    Science.gov (United States)

    Bonam, Ravi; Tien, Hung-Yu; Park, Chanro; Halle, Scott; Wang, Fei; Corliss, Daniel; Fang, Wei; Jau, Jack

    2014-04-01

    EUV Lithography is aimed to be inserted into mainstream production for sub-20nm pattern fabrication. Unlike conventional optical lithography, frequent defectivity monitors (adders, repeaters etc.) are required in EUV lithography. Due to sub-20nm pattern and defect dimensions e-beam inspection of critical pattern areas is essential for yield monitor. In previous work we showed sub-10nm defect detection sensitivity1 on patterned resist wafers. In this work we report 8-10× improvement in scan rates of etched patterns compared to resist patterns without loss in defect detection sensitivity. We observed good etch transfer of sub-10nm resist features. A combination of smart scan strategies with improved etched pattern scan rates can further improve throughput of e-beam inspection. An EUV programmed defect mask with Line/Space, Contact patterns was used to evaluate printability of defects and defect detection (Die-Die and Die-Database) capability of the e-beam inspection tool. Defect inspection tool parameters such as averaging, threshold value were varied to assess its detection capability and were compared to previously obtained results on resist patterns.

  20. Morphology of latent and etched heavy ion tracks in radiation resistant polymers polyimide and poly(ethylene naphthalate)

    Science.gov (United States)

    Apel, P. Yu.; Blonskaya, I. V.; Oganessian, V. R.; Orelovitch, O. L.; Trautmann, C.

    2001-12-01

    The initial phase of chemical etching of ion tracks was studied in the radiation resistant polymers polyimide (PI) and poly(ethylene naphthalate) (PEN). Stacks of thin films were irradiated with Kr, Xe and Bi ions with energies of several MeV per nucleon. During the etching process, the evolution of the pore growth was monitored by conductometric measurements. Similar to earlier observations in other polymers, the etching process revealed the existence of two different radial damage zones, namely, a track core and a track halo. Compared to the virgin polymer, the etching rate in the core region is largely increased, whereas the halo exhibits a higher resistance to the chemical attack indicating radiation-induced cross-linking effects. Typical diameter of the central part of the latent track is measured for different stopping powers of the projectiles. The track to bulk etch ratio is found to reach 500-600 in PI and ˜10 000 in PEN. Due to this property, both materials seem to be suitable for producing micro- and even nanostructures with high aspect ratios.

  1. Real-time monitoring of reactive species in downstream etch reactor by VUV broad-band absorption spectroscopy

    Science.gov (United States)

    Soriano, R.; Vallier, L.; Cunge, G.; Sadeghi, N.

    2016-09-01

    Plasma etching of nanometric size, high aspect-ratio structures is more challenging at each new technological node. Remote plasmas are beginning to find use when damages on nanostructures by ion bombardment become critical or when etching with high selectivity on different materials present on the wafer is necessary (i . e . tungsten oxide etching with fluorine and hydrogen containing plasmas in remote reactor from AMAT). Furthermore, it is expected that downstream plasma will replace many wet chemical etching processes to alleviate the issue of pattern collapses caused by capillary forces when nanometer size high aspect ratio structures are immersed in liquids. In these downstream plasmas, radicals are the main active species and a control of their density is of prime importance. Most of gases used and radicals produced in etching plasmas (HBr, BrCl, Br2, NF3, CH2F2,...) have strong absorption bands in the vacuum UV spectral region and we have shown that very low concentration of these species can be detected by VUV absorption. We have recently improved the technique by using a VUV CCD camera, instead of the PMT, which render possible the Broad-Band absorption spectroscopy in the 120-200 nm range, with a deuterium lamp, or a laser produced xenon arc lamp as light source. The multi-spectral detection ability of the CCD reduces the acquisition time to less than 1 second and can permit the real time control of the process control.

  2. Patterned transparent electrode with a continuous distribution of silver nanowires produced by an etching-free patterning method

    Science.gov (United States)

    Shin, Kwonwoo; Park, Ji Sun; Han, Jong Hun; Choi, Yunsu; Chung, Dae Sung; Kim, Se Hyun

    2017-02-01

    The outstanding electrical, optical, and mechanical properties of silver nanowire transparent electrodes are attractive for use in many optoelectronic devices, and the recent developments related to these electrodes have led to their commercialization. To more fully utilize the advantages of this technology, developing new process technologies in addition to performance improvements is important. In this report, we propose a novel ultra-simple patterning technology to generate a silver nanowire transparent layer and a unique patterned structure with continuously distributed silver nanowires without any etched areas. The patterning is conducted by exposure to ultraviolet light and rinsing. The exposed and unexposed regions of the resulting layer have dramatically different electrical conductivities, which produces an electrical pathway without using any etching or lift-off processes. The unique patterned structure produced by this etching-free method creates hardly any optical difference between the two regions and results in excellent visibility of the patterned transparent electrode layer.

  3. Influence of solvents and composition of etch-and-rinse and self-etch adhesive systems on the nanoleakage within the hybrid layer.

    Science.gov (United States)

    Ferreira, Joao Cardoso; Pires, Patricia Teixeira; Azevedo, Alvaro Ferreira; Oliveira, Sofia Arantes; Melo, Paulo Ribeiro; Silva, Mario Jorge

    2013-07-01

    The goal of this study was to evaluate nanoleakage within the hybrid layer yielded by etch-and-rinse and self-etch adhesive systems, with different solvents and compositions. Four adhesives were applied onto 20 human dentin disks: group A: Adper Scotchbond 1XT(™) (3M ESPE), group B: One Coat Bond(®) (Coltène Whaledent), group C: AdheSE(®) (Ivoclar Vivadent) and group D: Xeno-V(®) (Dentsply). The samples were immersed in aqueous ammoniacal silver nitrate for 24 hour, prepared and observed under field-emission scanning electron microscopy with backscattered electrons. Microphotographs were scanned and data were processed. The mean value and standard deviation were calculated. Kruskal- Wallis and Mann-Whitney tests were used (p adhesives showed nanoleakage within the hybrid layer: Adper Scotchbond 1XT(™) (218.5 µm ± 52.6 µm), One Coat Bond(®) (139.6 µm ± 79.0 µm), AdheSE(®) (92.7 µm ± 64.8 µm) and Xeno-V(®) (251.0 µm ± 85.2 µm). AdheSE(®) yielded less nanoleakage than Adper Scotchbond-1XT(™) (p = 0.003) and than Xeno-V(®) (p = 0.007). No other statistically significant differences were detected. Two-step self-etch adhesive system (AdheSE(®)) might contribute for lower nanoleakage deposition and thus better performance in dentin adhesion. The two-step self-etch adhesive system showed the lowest nanoleakage deposition compared with the other adhesive systems evaluated, which seems to indicate a better behavior when a restoration is performed in dentin and possibly can lead to a durable adhesion along time.

  4. Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma.

    Science.gov (United States)

    Ito, Hiroshi; Kuwahara, Takuya; Kawaguchi, Kentaro; Higuchi, Yuji; Ozawa, Nobuki; Kubo, Momoji

    2016-03-21

    -C and Si-Si bonds are generated. Finally, we conclude that our TB-QCMD etching simulator is effective for designing the optimal conditions for etching processes in which chemical reactions play a significant role.

  5. Deep reactive ion etching and focused ion beam combination for nanotip fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Villanueva, G. [Centro Nacional de Microelectronica (IMB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain); Plaza, J.A. [Centro Nacional de Microelectronica (IMB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain)]. E-mail: JoseAntonio.Plaza@cnm.es; Sanchez-Amores, A. [Centro Nacional de Microelectronica (IMB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain); Bausells, J. [Centro Nacional de Microelectronica (IMB-CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain); Martinez, E. [Nanobioengineering Laboratory (CREBEC), Barcelona Science Park, Josep Samitier 1-5, 08028 Barcelona (Spain); Samitier, J. [Nanobioengineering Laboratory (CREBEC), Barcelona Science Park, Josep Samitier 1-5, 08028 Barcelona (Spain); Errachid, A. [Nanobioengineering Laboratory (CREBEC), Barcelona Science Park, Josep Samitier 1-5, 08028 Barcelona (Spain)

    2006-03-15

    We have studied the fabrication of high-aspect ratio silicon tips by a combination of deep reactive ion etching and focused ion beam. The reactive ion etching is used to obtain so-called 'rocket tips' which can be fabricated with a high aspect ratio. The rocket tips are further processed by using a focused ion beam to obtain nanotips at their apex. Typical results obtained are nanotips with a basis radius of 200 nm and a height of 2.5 {mu}m, with an apex radius of 5 nm, located on top of a 3 {mu}m wide and 9 {mu}m high silicon column. The process would allow however obtaining column heights of several tens of microns.

  6. Numerical study of capacitive coupled HBr/Cl2 plasma discharge for dry etch applications

    Science.gov (United States)

    Gul, Banat; Ahmad, Iftikhar; Zia, Gulfam; Aman-ur-Rehman

    2016-09-01

    HBr/Cl2 plasma discharge is investigated to study the etchant chemistry of this discharge by using the self-consistent fluid model. A comprehensive set of gas phase reactions (83 reactions) including primary processes such as excitation, dissociation, and ionization are considered in the model along with 24 species. Our findings illustrate that the densities of neutral species (i.e., Br, HCl, Cl, H, and H2) produced in the reactor are higher than charged species (i.e., Cl2+, Cl-, HBr+, and Cl+). Density profile of neutral and charged species followed bell shaped and double humped distributions, respectively. Increasing Cl2 fraction in the feedback gases (HBr/Cl2 from 90/10 to 10/90) promoted the production of Cl, Cl+, and Cl2+ in the plasma, indicating that chemical etching pathway may be preferred at high Cl-environment. These findings pave the way towards controlling/optimizing the Si-etching process.

  7. Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics

    Science.gov (United States)

    Kanechika, Masakazu; Mitsushima, Yasuichi

    2000-12-01

    A new process to fabricate a silicon needle, whose tip radius is about 5 nm and aspect ratio is about 7, was developed. The silicon needles were fabricated by highly selective anisotropic dry etching. The etching mask was oxygen precipitation, which was formed by nitrogen ion implantation and the subsequent oxidation. The process is simple enough to be integrated with complementary metal-oxide-semiconductor (CMOS) circuits. The density of the silicon needle can be controlled by adjusting the dose for nitrogen ion implantation. The position of the silicon needle can be controlled by adjusting the position for nitrogen ion implantation, because silicon needles are formed only in the nitrogen ion implantation area. Furthermore, using these silicon needles as micro emitters, a field emission diode was fabricated. The Fowler-Nordheim plot shows that the field around the tip of the silicon needles was highly enhanced.

  8. Improvement of silicon nanowire solar cells made by metal catalyzed electroless etching and nano imprint lithography

    Science.gov (United States)

    Chen, Junyi; Subramani, Thiyagu; Jevasuwan, Wipakorn; Fukata, Naoki

    2017-04-01

    Silicon nanowires were fabricated by metal catalyzed electroless etching (MCEE) and nano imprint lithography (NIL), then a shell p-type layer was grown by thermal chemical vapor deposition (CVD) techniques. To reduce back surface recombination and also to activate the dopant, we used two techniques, back surface field (BSF) treatment and rapid thermal annealing (RTA), to improve device performance. In this study, we investigated BSF and RTA treatments in silicon nanowire solar cells, and improved the device performance and efficiency from 4.1 to 7.4% (MCEE device) and from 1.1 to 6.6% (NIL device) after introducing BSF and RTA treatments. Moreover, to achieve better metal contact without sacrificing the reflectance after the shell formation, the selective-area etching method was investigated. Finally, after combining all processes, silicon nanowire solar cells fabricated via the MCEE process exhibited 8.7% efficiency.

  9. Fabrication of 3D solenoid microcoils in silica glass by femtosecond laser wet etch and microsolidics

    Science.gov (United States)

    Meng, Xiangwei; Yang, Qing; Chen, Feng; Shan, Chao; Liu, Keyin; Li, Yanyang; Bian, Hao; Du, Guangqing; Hou, Xun

    2015-02-01

    This paper reports a flexible fabrication method for 3D solenoid microcoils in silica glass. The method consists of femtosecond laser wet etching (FLWE) and microsolidics process. The 3D microchannel with high aspect ratio is fabricated by an improved FLWE method. In the microsolidics process, an alloy was chosen as the conductive metal. The microwires are achieved by injecting liquid alloy into the microchannel, and allowing the alloy to cool and solidify. The alloy microwires with high melting point can overcome the limitation of working temperature and improve the electrical property. The geometry, the height and diameter of microcoils were flexibly fabricated by the pre-designed laser writing path, the laser power and etching time. The 3D microcoils can provide uniform magnetic field and be widely integrated in many magnetic microsystems.

  10. Plasma etching on large-area mono-, multi- and quasi-mono crystalline silicon

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk; Boisen, Anja

    2013-01-01

    We use plasma etched Black Si (BS)[1][2] nanostructures to achieve low reflectance due to the resulting graded refractive index at the Si-air interface. The goal of this investigation is to develop a suitable texturing method for Si solar cells. Branz et al. [3]report below 3% average reflectance...... advantages such as; (i) excellent light trapping, (ii) dry, single-sided and scalable process method and (iii) etch independence on crystallinity of Si, RIE-texturing has so far not been proven superior to standard wet texturing, primarily as a result of lower power conversion efficiency due to increased...... using maskless RIE in a O2 and SF6 plasma, and the surface topology was optimized for solar cell applications by varying gas flows, pressure, power and process time. The starting substrates were 156x156 mm p-type, CZ mono-, multi- and quasi-mono crystalline Si wafers, respectively, with a thickness...

  11. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h‑1) is in reasonable agreement with that detected in the experiments (24 µm · h‑1).

  12. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi...... of the change in free energy of adsorption, the Pourbaix diagram, the electrochemical double- layer thickness and silicon dopant type, and concentration. (C) 2004 The Electrochemical Society.......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...

  13. Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Heyn, Ch.; Sonnenberg, D.; Graf, A.; Kerbst, J.; Stemmann, A.; Hansen, W. [Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

    2014-05-15

    Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.

  14. Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Owen, Jorj Ian

    2011-07-01

    O:Al films can be increased up to 76 cm{sup 2}/Vs by annealing at high temperatures. Further, it is observed that this annealing process does not affect the morphology of the film and increases the total transmission in the solar cell relevant portion of the spectrum. Accelerated aging in a damp-heat is shown to affect the mobility primarily, and is thus likely related to poor transport across grain boundaries. Using deuterium as an isotopic marker, it is observed that the deuterium uptake was fairly linear with time and penetrated the whole film within 24 hours. Additionally, the deuterium is quickly replaced by hydrogen upon damp-heat treatment in water. It is concluded that the electrical degradation is related to the penetration of water via grain boundaries, and that the bulk of the reactions causing this degradation are fairly weak, such as the formation of zinc hydroxide. Additionally, the annealed high-mobility ZnO:Al films prove to be very stable in the damp-heat environment, exhibiting electron mobilities above 70 cm{sup 2}/Vs after 1000 hours of exposure. The initial points of attack during HCl etching of ZnO:Al, and the long-term etch evolution are shown to be related to certain grain boundaries built into the film during growth. The density of craters from an HCl etch is controllable by altering the temperature and concentration of the etching solution. It is further demonstrated that most acids exhibit etching behavior similar to that of HCl. Hydrofluoric acid (HF), however, exhibits unique etching characteristics with higher crater densities and sharper features. The crater density and shape are also shown to be controllable by etching in various concentrations of HF and in various mixtures of HF and HCl. Additional etching experiments are made to develop a polycrystalline ZnO:Al etching model. It is shown that basic and acidic solutions attack the same points on a polycrystalline ZnO:Al sample. The dependence of crater density on the acid concentration

  15. Sealing effectiveness of etch-and-rinse vs self-etching adhesives after water aging: influence of acid etching and NaOCl dentin pretreatment.

    Science.gov (United States)

    Monticelli, Francesca; Toledano, Manuel; Silva, Ana Simoes; Osorio, Estrella; Osorio, Raquel

    2008-06-01

    To determine the marginal leakage of Class V restorations bonded with etch-and-rinse and self-etching adhesives applied after different dentin pretreatments over a maximum storage time of 24 months. Standardized mixed Class V cavities (5 mm x 3 mm and 2 mm deep) were cut on the buccal and lingual surfaces of 180 human molars. Two self-etching adhesive systems, Adper Prompt L-Pop (3M ESPE) and Clearfil SE Bond (Kuraray), and one etch-and-rinse bonding agent (One Step, Bisco) were applied as follows: 1. according to manufacturers' instructions; 2. after 37% H3PO4 etching for 15 s; 3. after 37% H3PO4 etching for 15 s and 5% NaOCl aq application for 2 min. Teeth were stored for 24 h, 6, 12, and 24 months in saline solution at 37 degrees C before being stained in 0.5% solution of basic fuchsine. Dye penetration was scored on a 0 to 3 ordinal scale and analyzed with the Kruskal-Wallis H test (p < 0.05), Mann-Whitney U-test (p < 0.01), and Wilcoxon paired test (p < 0.05). Significant differences exist after using the tested adhesives at dentin and enamel margins. Adhesive type and substrate pretreatment had a significant effect on the long-term sealing of Class V restorations, and aging increased leakage overtime. The extent of leakage at the enamel margins was lower than that at dentin margins. One Step recorded the best results after 24 months. Optimal adhesion of restorative materials to enamel and dentin is hampered by a reduction in marginal seal over time. Alternative dentinal treatments (etching or collagen removal) might increase bonding efficacy, depending on the adhesive system used.

  16. Parametric study on the solderability of etched PWB copper

    Energy Technology Data Exchange (ETDEWEB)

    Hosking, F.M.; Stevenson, J.O.; Hernandez, C.L.

    1996-10-01

    The rapid advancement of interconnect technology has resulted in a more engineered approach to designing and fabricating printed wiring board (PWB) surface features. Recent research at Sandia National Laboratories has demonstrated the importance of surface roughness on solder flow. This paper describes how chemical etching was used to enhance the solderability of surfaces that were normally difficult to wet. The effects of circuit geometry, etch concentration, and etching time on solder flow are discussed. Surface roughness and solder flow data are presented. The results clearly demonstrate the importance of surface roughness on the solderability of fine PWB surface mount features.

  17. Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

    Science.gov (United States)

    Lee, Changwoo; Nagabhirava, Bhaskar; Goss, Michael; Wang, Peng; Friddle, Phil; Schmitz, Stafan; Wu, Jian; Yang, Richard; Mignot, Yann; Rassoul, Nouradine; Hamieh, Bassem; Beique, Genevieve; Labonte, Andre; Labelle, Catherine; Arnold, John; Mucci, John

    2015-03-01

    As feature critical dimension (CD) shrinks towards and beyond the 7nm node, patterning techniques for optical lithography with double and triple exposure will be replaced by EUV patterning. EUV enables process and overlay improvement, as well as a potential cost reduction due to fewer wafer passes and masks required for patterning. However, the EUV lithography technique introduces newer types of resists that are thinner and softer compared to conventional 193nm resists currently being used. The main challenge is to find the key etch process parameters to improve the EUV resist selectivity, reduce LER and LWR, minimize line end shrink, improve tip-to-tip degradation, and avoid line wiggling while still enabling previous schemes such as trench-first-metal-hard-mask (TFMHM), self-aligned via (SAV) and self-aligned contact (SAC). In this paper, we will discuss some of the approaches that we have investigated to define the best etch process adjustments to enable EUV patterning. RF pulsing is one of the key parameters utilized to overcome most of the previously described challenges, and has also been coupled with stack optimization. This study will focus on RF pulsing (high vs. low frequency results) and bias control (RF frequency dependence). In particular, pulsing effects on resist morphology, selectivity and profile management will be reported, as well as the role of aspect ratio and etch chemistry on organic mask wiggling and collapse. This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities.

  18. A preliminary study on the etching behavior of SiO sub 2 aerogel film with CHF sub 3 gas

    CERN Document Server

    Wang, S J; Yeom, G Y

    1998-01-01

    Etching behavior of SiO sub 2 aerogel film has been investigated in order to examine the feasibility of its application to an interlevel dielectric material. Low dielectric property of SiO sub 2 aerogel film is simply originated from its highly porous structure, but interconnected particles are covered with surface chemical bondings (-OH, -OC sub 2 H sub 5 , etc). Etching experiments have been performed with high density inductively coupled CHF sub 3 plasma. The effects of porous structure and surface chemical bondings on the etching of SiO sub 2 aerogel film have been analyzed. The changes of surface morphology were observed using scanning electron microscopy. X-ray photoelectron spectroscopic analyses revealed compositions and chemical bonding states of reaction layer. From the analyses, 3-dimensional etching was not feasible macroscopically in SiO sub 2 aerogel film even with its porous nature because network structure was maintained through the etching process. Internal surface chemicals seemed to act an ...

  19. Patterned Au/poly(dimethylsiloxane) substrate fabricated by chemical plating coupled with electrochemical etching for cell patterning.

    Science.gov (United States)

    Bai, Hai-Jing; Shao, Min-Ling; Gou, Hong-Lei; Xu, Jing-Juan; Chen, Hong-Yuan

    2009-09-01

    In this paper, we present a novel approach for preparing patterned Au/poly(dimethylsiloxane) (PDMS) substrate. Chemical gold plating instead of conventional metal evaporation or sputtering was introduced to achieve a homogeneous gold layer on native PDMS for the first time, which possesses low-cost and simple operation. An electrochemical oxidation reaction accompanied by the coordination of gold and chloride anion was then exploited to etch gold across the region covered by electrolyte. On the basis of such an electrochemical etching, heterogeneous Au/PDMS substrate which has a gold "island" pattern or PDMS dots pattern was fabricated. Hydrogen bubbles which were generated in the etching process due to water electrolysis were used to produce a safe region under the Pt auxiliary electrode. The safe region would protect gold film from etching and lead to the formation of the gold "island" pattern. In virtue of a PDMS stencil with holes array, gold could be etched from the exposed region and take on the PDMS dots pattern which was selected to for protein and cell patterning. This patterned Au/PDMS substrate is very convenient to construct cytophobic and cytophilic regions. Self-assembled surface modification of (1-mercaptoundec-11-yl)hexa(ethylene glycol) on gold and adsorption of fibronectin on PDMS are suitable for effective protein and cell patterning. This patterned Au/PDMS substrate would be a potentially versatile platform for fabricating biosensing arrays.

  20. Fabrication of silicon nanopillar arrays by cesium chloride self-assembly and wet electrochemical etching for solar cell

    Science.gov (United States)

    Liu, Jing; Zhang, Xinshuai; Dong, Gangqiang; Liao, Yuanxun; Wang, Bo; Zhang, Tianchong; Yi, Futing

    2014-01-01

    A simple technology with cesium chloride (CsCl) self-assembly lithography and wet electrochemical etching is introduced to fabricate the wafer scale, disordered, well-aligned, and high aspect ratio silicon nanopillars. The original nano structures of CsCl islands with diameters of 500-2000 nm are formed by self-assembly and used as template of lift-off for the nanoporous gold film for wet electrochemical etching as the catalyst in etching solution of HF and H2O2. The average diameter of silicon nanopillars is determined by the CsCl nanoislands with 500-2000 nm, and the height of silicon nanopillars is mainly determined by the etching time in etching solution with 3-12 μm. The aspect ratio can achieve to 60. The solar cells with different height nanopillars are made for the research of photovoltaic conversion efficiency (PCE). The reflectance of the nanopillars with different height is measured from the wavelength of 400 to 1000 nm and the 9 μm height silicon nanopillars has the lowest one which is below 3%. The PCE shows the highest value of 14.19% at the condition of 3 μm height nanopillars and 12.18% of planar one with the same fabrication process.

  1. Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

    Science.gov (United States)

    Sun, Jingchang; Zhao, Ting; Ma, Zhangwei; Li, Ming; Chang, Cheng; Liang, Hongwei; Bian, Jiming; Li, Chengren

    2015-09-01

    The well-aligned ZnO nano-arrays/rods synthesized by a chemical bath deposition method on a highly conductive Si substrate were chemically etched in an ammonia chloride aqueous solution. An obvious end shape modification of ZnO nano-arrays/rods was realized in this report. The hexagonal frustum end of ZnO nano-arrays/rods changed into a pyramid and the diameter of ZnO nano-arrays/rods decreased gradually with the increasing etching time. The evolution mechanism of the wet etching process was discussed based on a proposed evolution model. Photoluminescence measurements indicated that the near band edge emissions of ZnO nano-arrays/rods increased greatly after wet etching. The controllable end shape modification of ZnO nano-arrays/rods on a highly conductive Si substrate by this simple wet etching technique will further explore the application of ZnO in field emission devices and 1D based nano-devices with various end shapes.

  2. Improvement of a block co-polymer (PS-b-PMMA)-masked silicon etch profile using a neutral beam

    Science.gov (United States)

    Yun, Deokhyun; Park, Jinwoo; Kim, Hwasung; Mun, Jeongho; Kim, Sangouk; Kim, Kyongnam; Yeom, Geunyoung

    2016-09-01

    Bottom-up block copolymer (BCP) lithography mediated by self-assembly of polystyrene (PS)/poly-methyl methacrylate (PMMA) is widely used as an alternative patterning method for various deep nanoscale devices, such as optical devices and transistors, replacing conventional top-down photolithography. However, the nanoscale BCP mask features formed on the substrates after direct self-assembly of BCP tend to be easily damaged during exposure to the following plasma processing. In this study, silicon masked with a nanoscale BCP mask (PS) was etched by irradiating with a Cl2/Ar neutral beam in addition to a Cl2/Ar ion beam, and the effect of a Cl2/Ar neutral beam instead of a Cl2/Ar ion beam on damage to the PS mask and the silicon etch characteristics of nanodevices was investigated. The results show that the use of a neutral beam instead of an ion beam decreased degradation of the BCP mask during etching; therefore, a more anisotropic silicon etch profile in addition to improved etch selectivity of silicon compared to the BCP mask was observed. Moreover, by using the neutral beam, the sidewall roughness and sidewall angle also improved due to the decreased surface charge and reduced damage to the nanoscale PS mask resulting from use of a highly directional radical beam instead of a conventional ion-based beam.

  3. Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling

    CERN Document Server

    Moussa, H; Meriadec, C; Manin, L; Sagnes, I; Raj, R

    2002-01-01

    Deep reactive ion etching of III-V multilayer structures is an important issue for long wavelength vertical cavity surface emitting laser (VCSELs) where full laser structures are usually very thick. Test etchings were performed on GaAs/Al sub x Ga sub 1 sub - sub x As Bragg mirror structures and monitored using laser reflectometry at 651.4 nm. In order to perform very deep etching, up to 9 mu m, we designed and fabricated a special two-level mask made up of a thick nitride layer and a thin nickel layer. The etching rate is a complex function of many parameters and may change from run to run for similar structures. Therefore, it is important to have a method to control accurately the process in situ by continuously matching, experimental curves with the results of the reflectivity modeling. Here, we present a model, based on the Abeles matrix method, of the normal incidence reflectivity of a multilayer stack as a function of etch depth. Comparison between the model and the observed reflectivity variation durin...

  4. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  5. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    Energy Technology Data Exchange (ETDEWEB)

    Anglin, Kevin, E-mail: kevin.r.anglin@gmail.com; Goodhue, William D. [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 and Department of Physics and Applied Physics, University of Massachusetts Lowell, 1 University Ave., Lowell, Massachusetts 01854 (United States); Swint, Reuel B.; Porter, Jeanne [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 (United States)

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  6. Improvement in the etching performance of the acrylonitrile-butadiene-styrene resin by MnO2-H3PO4-H2SO4 colloid.

    Science.gov (United States)

    Zhao, Wenxia; Ding, Jie; Wang, Zenglin

    2013-05-21

    The present study aimed to evaluate the surface etching of the acrylonitrile-butadiene-styrene (ABS) resin in the MnO2-H3PO4-H2SO4 colloid. To enhance the soluble Mn(IV) ion concentration and improve the etching performance of ABS resin, H3PO4 was added as a complexing agent into the MnO2-H2SO4 etching system. The effects of the H2SO4 concentration and etching time on the surface topography, surface roughness, adhesion strength, and the surface chemistry of the ABS substrates were investigated. The optimal oxidation potentials of MnO2 in the colloids decreased from 1.426 to 1.369 V with the addition of H3PO4. Though the etching conditions changed from 70 °C for 20 min to 60 °C for 10 min, the adhesion strength between the ABS substrates and electroless copper film increased from 1.19 to 1.33 KN/m after etching treatment. This could be attributed to the significant increase of the soluble Mn(IV) ion concentration in the MnO2-H3PO4-H2SO4 colloid. The surface chemistry results demonstrated that the oxidation reaction of -C═C- bonds in the polybutadiene phase was accelerated in the etching process by the addition of H3PO4, and the abundant -COOH and -OH groups were formed rapidly on the ABS surface with the etching treatment. These results were in agreement with the results of surface scanning electron microscopic observations and adhesion strength measurement. The results suggested that the MnO2-H3PO4-H2SO4 colloid was an effective surface etching system for the ABS surface roughness.

  7. 化学气相沉积法制备的石墨烯晶畴的氢气刻蚀∗%Hydrogen etching of chemical vap or dep osition-grown graphene domains

    Institute of Scientific and Technical Information of China (English)

    王彬; 冯雅辉; 王秋实; 张伟; 张丽娜; 马晋文; 张浩然; 于广辉; 王桂强

    2016-01-01

    In this paper we analyze the reason of the etching trenches in chemical vapor deposition (CVD) graphene domain and study the influence factor in the distribution and morphology of wrinkles. Graphene is synthesized on Cu substrate. The Cu substrate is annealed at 1050 ◦C for 60 min with 1000 sccm Ar and 200 sccm H2. After annealing, 500 sccm Ar, 20 sccm H2, and 1 sccm dilute CH4 (mixed with Ar) are introduced into the CVD system for graphene growth. Hydrogen etchings of graphene are conducted with flows of 500 sccm Ar and 200 sccm H2 at atmospheric pressure, and etching are performed at 950 and 1050 ◦C. The striated and reticular etching trenches are observed after etching via optical microscope and scanning electron microscope. Every graphene domain is divided into island structures by these etching trenches. However, the edge of graphene domain is not etched and the size of domain is not changed. Electron backscatter diffraction (EBSD) is conducted to analyze the different morphologies of etching trenches. According to the EBSD analysis, the etching trench is closely associated with the Cu crystal orientation. Different Cu planes result in differences in mode, shape, and density of the etching trench. We conduct a verification experiment to judge whether the etching trenches are caused by the gaps between graphene and Cu substrate or by the hydrogenation of wrinkles. The graphene domains grown on Cu substrate with the same growth condition are etched immediately after growth without cooling process. We select graphene which grows across the Cu grain boundary, via optical microscope. A small number of regular hexagons are observed in graphene surface and the region of Cu boundary, but no etching trench is found. As the graphene growing across Cu boundary is the suspending graphene and there is no etching trench, we consider that the gap between graphene and Cu species is not a significant factor of forming etching trench. For comparison, the etching trenches

  8. [INVITED] On the mechanisms of single-pulse laser-induced backside wet etching

    Science.gov (United States)

    Tsvetkov, M. Yu.; Yusupov, V. I.; Minaev, N. V.; Akovantseva, A. A.; Timashev, P. S.; Golant, K. M.; Chichkov, B. N.; Bagratashvili, V. N.

    2017-02-01

    Laser-induced backside wet etching (LIBWE) of a silicate glass surface at interface with a strongly absorbing aqueous dye solution is studied. The process of crater formation and the generated optoacoustic signals under the action of single 5 ns laser pulses at the wavelength of 527 nm are investigated. The single-pulse mode is used to avoid effects of incubation and saturation of the etched depth. Significant differences in the mechanisms of crater formation in the "soft" mode of laser action (at laser fluencies smaller than 150-170 J/cm2) and in the "hard" mode (at higher laser fluencies) are observed. In the "soft" single-pulse mode, LIBWE produces accurate craters with the depth of several hundred nanometers, good shape reproducibility and smooth walls. Estimates of temperature and pressure of the dye solution heated by a single laser pulse indicate that these parameters can significantly exceed the corresponding critical values for water. We consider that chemical etching of glass surface (or molten glass) by supercritical water, produced by laser heating of the aqueous dye solution, is the dominant mechanism responsible for the formation of crater in the "soft" mode. In the "hard" mode, the produced craters have ragged shape and poor pulse-to-pulse reproducibility. Outside the laser exposed area, cracks and splits are formed, which provide evidence for the shock induced glass fracture. By measuring the amplitude and spectrum of the generated optoacoustic signals it is possible to conclude that in the "hard" mode of laser action, intense hydrodynamic processes induced by the formation and cavitation collapse of vapor-gas bubbles at solid-liquid interface are leading to the mechanical fracture of glass. The LIBWE material processing in the "soft" mode, based on chemical etching in supercritical fluids (in particular, supercritical water) is very promising for structuring of optical materials.

  9. Spin-on metal oxide materials with high etch selectivity and wet strippability

    Science.gov (United States)

    Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; McKenzie, Douglas; Rahman, Dalil; Cho, JoonYeon; Padmanaban, Munirathna; Petermann, Claire; Hong, SungEun; Her, YoungJun

    2016-03-01

    Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process.

  10. The role of etching in bonding to enamel: a comparison of self-etching and etch-and-rinse adhesive systems.

    Science.gov (United States)

    Erickson, Robert L; Barkmeier, Wayne W; Latta, Mark A

    2009-11-01

    Etch and resin infiltration morphologies were compared for three self-etch adhesive (SEA) systems and eleven model etch-and-rinse (ERA) systems using various phosphoric acid (PA) concentrations with Adper Single Bond Plus (SB) adhesive. Matches for the morphologies were made between each SEA system and one of the PA/SB systems and bond strength measurements were made for all the systems. The hypothesis was that similar morphology would result in similar bond strength assuming micro-mechanical bonding is the mechanism of adhesion. Three specimens were prepared on polished (4000 grit) human enamel for each adhesive system to examine etch and resin infiltration morphology by SEM. For the latter, the adhesive systems were bonded using recommended methods and the enamel was dissolved in acid to reveal the resin. The etch patterns for the SEA systems were determined by rinsing off the material with water and acetone. Polished (4000 grit) human enamel was used with each adhesive system to determine 24-h resin composite to enamel shear bond strengths (SBS). A minimum of 10 specimens were used for each group. Data were analyzed by a one factor ANOVA and Fisher's PLSD post hoc test. The SBS to polished enamel for two of the three SEA systems were statistically significantly greater (penamel.

  11. Characterization of Plasma Etch Processes for Wide Bandgap Semiconductors

    Science.gov (United States)

    2005-09-07

    resubmission suspense date of is recommended. Attached is Principal Contracting Officer (PCO) letter to the Business Office and PI detailing reasons for nonacceptance and establishing a resubmittal date. DON SILVERSMITH Program Manager

  12. Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation

    Science.gov (United States)

    Liu, Zecheng; Imamura, Masato; Asano, Atsuki; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

    2017-08-01

    Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl2 plasma emissions with wavelengths of 258 and 306 nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors.

  13. Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

    Science.gov (United States)

    Qian, H.; Lee, K. B.; Vajargah, S. Hosseini; Novikov, S. V.; Guiney, I.; Zaidi, Z. H.; Jiang, S.; Wallis, D. J.; Foxon, C. T.; Humphreys, C. J.; Houston, P. A.

    2017-02-01

    A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.

  14. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    Science.gov (United States)

    Stráský, Josef; Havlíková, Jana; Bačáková, Lucie; Harcuba, Petr; Mhaede, Mansour; Janeček, Miloš

    2013-09-01

    Presented work aims at multi-method characterization of combined surface treatment of Ti-6Al-4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  15. Atomic layer etching of GaN and AlGaN using directional plasma-enhanced approach

    Science.gov (United States)

    Ohba, Tomihito; Yang, Wenbing; Tan, Samantha; Kanarik, Keren J.; Nojiri, Kazuo

    2017-06-01

    The directional atomic layer etching (ALE) of GaN and AlGaN has been developed. The GaN ALE process consists of cyclic Cl2 plasma chemisorption and Ar ion removal. The etch per cycle (EPC) was 0.4 nm within the self-limiting regime, which is 50 to 100 V. The root-mean-square surface roughness R RMS was 0.6 nm, which was improved from an initial roughness of 0.8 nm. For AlGaN ALE, BCl3 was added to the chlorine step to obtain a smooth surface with R RMS of 0.3 nm and stoichiometry similar to the initial sample. The ultra smooth surface obtained by etching is promising for use in next-generation power devices.

  16. Unveiling the shape-diversified silicon nanowires made by HF/HNO3 isotropic etching with the assistance of silver

    Science.gov (United States)

    Chen, Chia-Yun; Wong, Ching-Ping

    2014-12-01

    Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag+-ion containing oxidants on Si etching, we have re-examined the state-of-the-art metal-assisted chemical etching (MaCE) using HF/AgNO3 etchants. In contrast with previous reports, we found that the interplay of hole injections from Ag+ and NO3- ions to the valence band of Si collectively contributes to the unidirectional dissolution of Si. Finally, we explored the engineering of the Ag nano-seeds to regularize the orientation of the etched nanowires formed on non-Si (100) wafers, which further provides a reliable pathway for constructing the desired morphologies of one-dimensional Si nanostructures regardless of wafer orientation.Hydrofluoric (HF)/nitric (HNO3)/acetic (CH3COOH) acid, normally referred to as the HNA method, is a widely utilized technique for performing isotropic etching on silicon (Si) in industrial Si-based processing and device construction. Here, we reported a novel etching strategy based on a HF/HNO3 process with the assistance of silver (Ag) nano-seeds, offering good controllability in preparing diversified Si nanostructure arrays with particularly smooth top surfaces. The involved mechanism was visualized by systematically investigating both the time and temperature dependencies on the etching kinetics with various ratios of HF to HNO3. Moreover, by testing different Ag

  17. Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2016-07-15

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si

  18. Marginal permeability of self-etch and total-etch adhesive systems.

    Science.gov (United States)

    Owens, Barry M; Johnson, William W; Harris, Edward F

    2006-01-01

    This study evaluated microleakage in vitro of self-etch and multi-step, total-etch adhesive systems. Ninety-six extracted non-carious human molars were randomly assigned to eight groups (n=12) and restored with different adhesive systems: Optibond Solo Plus, iBond, Adper Prompt L-Pop, Xeno III, Simplicity, Nano-Bond, Adper Scotchbond Multi-Purpose and Touch & Bond. Each group was treated following the manufacturer's instructions. Class V cavities were prepared on the facial or lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (dentin). The teeth were restored with Z-100 resin composite. After polishing with Sof-Lex disks, the teeth were thermocycled for 1000 cycles and coated with nail varnish to within 1.0 mm of the restoration. The teeth were stained in 1% methylene blue dye for 24 hours and sectioned from the facial to lingual surface. Dye penetration (microleakage) was examined with a 20x binocular microscope. Enamel and dentin margin leakage was scored on a 0 to 3 ordinal scale. Data were analyzed using Kruskal-Wallis Analysis of Variance and Mann-Whitney U tests. Comparison of the adhesive groups at the enamel margin revealed: 1) Adper Scotchbond Multi-Purpose exhibited significantly less leakage than the other adhesive groups (except iBond); 2) among the self-etch adhesive groups, iBond exhibited significantly less leakage than Nano-Bond and 3) the other adhesive groups clustered intermediately. In contrast, there were no significant differences among the adhesive groups when the dentin margin was evaluated. A Wilcoxin signed rank test showed significantly less leakage at the enamel margins compared to the dentin margins of the eight adhesive systems tested. All data were submitted to statistical analysis at p<0.05 level of significance.

  19. Effect of postoperative bleaching on microleakage of etch-and-rinse and self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Vajihesadat Mortazavi

    2011-01-01

    Full Text Available Background: Bleaching the discoloured teeth may affect the tooth/composite interface. The aim of this in vitro experimental study was to evaluate the effect of vital tooth bleaching on microleakage of existent class V composite resin restorations bonded with three dental bonding agents. Methods : Class V cavities were prepared on buccal surfaces of 72 intact, extracted human anterior teeth with gingival margins in dentin and occlusal margins in enamel, and randomly divided into 3 groups. Cavities in the three groups were treated with Scotch bond Multi-Purpose, a total etch system and Prompt L-Pop and iBond, two self-etch adhesives. All teeth were restored with Z250 resin composite material and thermo-cycled. Each group was equally divided into the control and the bleached subgroups (n = 12. The bleached subgroups were bleached with 15% carbamide peroxide gel for 8 hours a day for 15 days. Microleakage scores were evaluated on the incisal and cervical walls. Data were analyzed using Kruskal-Wallis, Mann-Whitney and Bonferroni post-hoc tests (α = 0.05. Results: Bleaching with carbamide peroxide gel significantly increased the microleakage of composite restorations in Prompt L-Pop group at dentinal walls (P = 0.001. Bleaching had no effect on microleakage of restorations in the Scotch bond Multi-Purpose and iBond groups. Conclusion: Vital tooth bleaching with carbamide peroxide gel has an adverse effect on marginal seal of dentinal walls of existent composite resin restorations bonded with prompt L-Pop self-etch adhesive.

  20. Polishing of quartz by rapid etching in ammonium bifluoride.

    Science.gov (United States)

    Vallin, Orjan; Danielsson, Rolf; Lindberg, Ulf; Thornell, Greger

    2007-07-01

    The etch rate and surface roughness of polished and lapped AT-cut quartz subjected to hot (90, 110, and 130 degrees C), concentrated (50, 65, 80 wt %) ammonium bi-fluoride have been investigated. Having used principal component analysis to verify experimental solidity and analyze data, we claim with confidence that this parameter space does not, as elsewhere stated, allow for a polishing effect or even a preserving setting. Etch rates were found to correlate well, and possibly logarithmically, with temperature except for the hottest etching applied to lapped material. Roughness as a function of temperature and concentration behaved well for the lapped material, but lacked systematic variation in the case of the polished material. At the lowest temperature, concentration had no effect on etch rate or roughness. Future efforts are targeted at temperatures and concentrations closer to the solubility limit.

  1. What's new in dentine bonding? Self-etch adhesives.

    Science.gov (United States)

    Burke, F J Trevor

    2004-12-01

    Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

  2. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  3. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray) an

  4. A survey on the reactive ion etching of silicon in microtechnology

    NARCIS (Netherlands)

    Jansen, Henricus V.; Gardeniers, Johannes G.E.; de Boer, Meint J.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system

  5. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray)

  6. Fabrication of honeycomb texture on poly-Si by laser interference and chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bogeum; Lee, Myeongkyu, E-mail: myeong@yonsei.ac.kr

    2013-11-01

    In this paper, we present a laser-interference method to fabricate honeycomb textures on poly-Si wafer for reflection reduction. When exposed to three interfering pulsed laser beams at 532 nm, the Si surface was periodically melted in accordance with the interference pattern. As a result, concave holes were generated on the surface because the melted material overflowed and condensed at the periphery. Subsequent acid etching revealed uniform and clean honeycomb textures. The texture depth could be controlled by varying the irradiation condition and a minimum reflectance of 10% was obtained. Transmission electron microscopy analysis showed that no irradiation-induced damage remained after etching. This approach can be a cost-effective alternative to lithographic processes for fabricating high-efficiency poly-Si solar cells.

  7. Metal-assisted chemical etching of CIGS thin films for grain size analysis

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Chaowei [Research and Development Centre, Hanergy Thin Film Power Group Limited, Chengdu (China); Loi, Huu-Ha; Duong, Anh; Parker, Magdalena [Failure Analysis Department, MiaSole Hi-Tech Corp., Santa Clara, CA (United States)

    2016-09-15

    Grain size of the CIGS absorber is an important monitoring factor in the CIGS solar cell manufacturing. Electron backscatter diffraction (EBSD) analysis is commonly used to perform CIGS grain size analysis in the scanning electron microscope (SEM). Although direct quantification on SEM image using the average grain intercept (AGI) method is faster and simpler than EBSD, it is hardly applicable on CIGS thin films. The challenge is that, not like polycrystalline silicon, to define grain boundaries by selective chemical etching is not easily realizable for the multi-component CIGS alloy. In this Letter, we present direct quantification of CIGS thin film grain size using the AGI method by developing metal-assisted wet chemical etching process to define CIGS grain boundaries. The calculated value is similar to EBSD result. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Spectroscopic ellipsometry analysis of silicon nanotips obtained by electron cyclotron resonance plasma etching.

    Science.gov (United States)

    Mendoza-Galván, Arturo; Järrendahl, Kenneth; Arwin, Hans; Huang, Yi-Fan; Chen, Li-Chyong; Chen, Kuei-Hsien

    2009-09-10

    Silicon nanotips fabricated by electron cyclotron resonance plasma etching of silicon wafers are studied by spectroscopic ellipsometry. The structure of the nanotips is composed of columns 100-140 nm wide and spaced by about 200 nm. Ellipsometry data covering a wide spectral range from the midinfrared to the visible are described by modeling the nanotip layer as a graded uniaxial film using the Bruggeman effective medium approximation. The ellipsometry data in the infrared range reveal two absorption bands at 754 and 955 cm(-1), which cannot be resolved with transmittance measurements. These bands indicate that the etching process is accompanied with formation of carbonaceous SiC and CH(n) species that largely modify the composition of the original crystalline silicon material affecting the optical response of the nanotips.

  9. Symmetrical fully-etched and chirped beam splitter based on a subwavelength binary blazed grating

    Institute of Scientific and Technical Information of China (English)

    ZHOU Wei; ZHANG Hua-liang; YANG Jun-bo; YANG Jun-cai

    2012-01-01

    A novel synmetrical chirped beam splitter based on a binary blazed grating is proposed,which adopts the fully-etched grating structure compatible with the current fabrication facilities for CMOS technology and convenient for integration and manufacture process.This structure can realize nearly equal-power splitting operation under the condition of TE polarization incidence.When the absolutely normal incidence occurs at the wavelength of 1580 nm,the coupling efficiencies of the left and the right branches are 43.627% and 43.753%,respectively.Moreover,this structure has the tolerances of 20 nm in etched depth and 3° in incident angle,which is rather convenient to manufacture facility.

  10. Etching zircon age standards for fission-track analysis

    Energy Technology Data Exchange (ETDEWEB)

    Garver, J.I. E-mail: garverj@union.edu

    2003-02-01

    Nineteen laboratories that routinely measure fission-track ages in zircon were surveyed as to their principal methodology used for track revelation using chemical attack and counting procedures. The survey results show the following: (a) researchers in most labs count fission tracks with a optical microscope using at a total magnification between 1250x and 1600x ({approx}80%) with about an equal number using either a dry or oil objective (b) the majority of laboratories etch zircon with a KOH:NaOH eutectic heated in an oven between temperatures of 210 deg. C and 230 deg. C; (c) ag standards in zircon analysis do not have uniformly accepted etch times. Etching times for the widely used 28 Ma Fish Canyon Tuff (FCT) (4-60 h) and the lesser-used 16 Ma Buluk Tuff (13-55 h) vary significantly from lab to lab. Between {approx}220 deg. C and 230 deg. C, the principal range fo etching times for the FCT is between 20 and 30 h, and the mode for the Buluk Tuff is between 30 and 55 h. Three or fewer labs report etching times for the Tardee Rhyolite (22-40 h), the Bishop Tuff (10-46 h), and the Mt. Dromedary Banite (5-24 h). Variation in etching times may result in a bias in U-content which affects counting statistics. If etching is successful, strict criteria must be followed to ensure that the analyst only counts well-etched grains and that all tracks are successfully identified.

  11. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  12. Dry etching of single crystal PMN-PT piezoelectric material.

    OpenAIRE

    Agnus, Joël; Alexandru Ivan, Ioan; Queste, Samuel

    2011-01-01

    International audience; During the last decade, the applications of PMN-PT spread significantly. Unlike PZT, the appropriate microtechnologies for PMN-PT Piezo-MEMS aren't fully documented in the literature. This paper deals with the PMN-PT etching by inductively coupled plasma (ICP) technique, also known as DRIE. The paper quantitatively presents the etching parameters of PMN-PT by the Ar/C4F8 gas combination and reports some related useful experience.

  13. Controlling VUV photon fluxes in pulsed inductively coupled Ar/Cl2 plasmas and potential applications in plasma etching

    Science.gov (United States)

    Tian, Peng; Kushner, Mark J.

    2017-02-01

    UV/VUV photon fluxes in plasma materials processing have a variety of effects ranging from producing damage to stimulating synergistic reactions. Although in plasma etching processes, the rate and quality of the feature are typically controlled by the characteristics of the ion flux, to truly optimize these ion and photon driven processes, it is desirable to control the relative fluxes of ions and photons to the wafer. In prior works, it was determined that the ratio of VUV photon to ion fluxes to the substrate in low pressure inductively coupled plasmas (ICPs) sustained in rare gases can be controlled by combinations of pressure and pulse power, while the spectrum of these VUV photons can be tuned by adding additional rare gases to the plasma. In this work, VUV photon and ion fluxes are computationally investigated for Ar/Cl2 ICPs as used in etching of silicon. We found that while the overall ratio of VUV photon flux to ion flux are controlled by pressure and pulse power, by varying the fraction of Cl2 in the mixture, both the ratio of VUV to ion fluxes and the spectrum of VUV photons can be tuned. It was also found that the intensity of VUV emission from Cl(3p 44s) can be independently tuned by controlling wall surface conditions. With this ability to control ratios of ion to photon fluxes, photon stimulated processes, as observed in halogen etching of Si, can be tuned to optimize the shape of the etched features.

  14. Comparison of the Schaake and Benson Etches to Delineate Dislocations in HgCdTe Layers

    Science.gov (United States)

    Farrell, S.; Rao, Mulpuri V.; Brill, G.; Chen, Y.; Wijewarnasuriya, P.; Dhar, N.; Benson, J. D.; Harris, K.

    2013-11-01

    The morphology and classification of etch pits in molecular beam epitaxy-grown (211) HgCdTe/CdTe/Si layers were investigated using the Schaake and Benson etch pit density (EPD) etches. The two EPD etches were compared and shown to have a 1:1 correlation in the etch pits that were produced. Close examination of the shape of the etch pits via scanning electron microscopy shows that several distinguishable classifications of etch pits are revealed using both etches. Samples subjected to thermal cycle annealing (TCA) treatment show a nonuniform reduction in etch pit populations according to the classification defined in this study. In particular, a class of etch pits called "fish shaped" are completely absent after TCA and can account for up to one-third of the total reduction in EPD.

  15. Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

    Science.gov (United States)

    Miura, Yutaka; Kasahara, Yu; Habuka, Hitoshi; Takechi, Naoto; Fukae, Katsuya

    2009-02-01

    The etching rate behavior of silicon dioxide (SiO2, fused silica) using chlorine trifluoride (ClF3) gas is studied at substrate temperatures between 573 and 1273 K at atmospheric pressure in a horizontal cold-wall reactor. The etching rate increases with the ClF3 gas concentration, and the overall reaction is recognized to be of the first order. The change of the etching rate with increasing substrate temperature is nonlinear, and the etching rate tends to approach a constant value at temperatures exceeding 1173 K. The overall rate constant is estimated by numerical calculation, taking into account the transport phenomena in the reactor, including the chemical reaction at the substrate surface. The activation energy obtained in this study is 45.8 kJ mol-1, and the rate constant is consistent with the measured etching rate behavior. A reactor system in which there is minimum etching of the fused silica chamber by ClF3 gas can be achieved using an IR lamp heating unit and a chamber cooling unit to maintain a sufficiently low temperature of the chamber wall.

  16. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  17. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  18. Inductively coupled plasma etching of GaN using SiCl{sub 4}/Cl{sub 2}/Ar for submicron-sized features fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Dylewicz, R.; Patela, S. [Photonics Group, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Hogg, R.A.; Fry, P.W.; Parbrook, P.J.; Airey, R.; Tahraoui, A. [Department of Electronic and Electrical Engineering, EPSRC National Center for III-V Technologies, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2007-06-15

    In this paper we report the optimization of the fabrication process of a grating coupler, which is fully integrated with a GaN planar waveguide. To our knowledge, this is the first report of a grating-assisted optical coupler in gallium nitride. ICP dry etching of n-doped GaN layers was investigated, where SiCl{sub 4}/Cl{sub 2}/Ar gas mixture was used under different etching conditions. We report n-GaN ICP etching ratio of 520-2680 Aa min{sup -1} as well as etching selectivity of GaN over SiO{sub 2} from 3 to 8, in the most cases. Grating ridge and grating groove width as well as the sidewalls slope were evaluated by SEM microscope. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-12-22

    The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.

  20. Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications.

    Science.gov (United States)

    Alias, Mohd S; Yang, Yang; Ng, Tien K; Dursun, Ibrahim; Shi, Dong; Saidaminov, Makhsud I; Priante, Davide; Bakr, Osman M; Ooi, Boon S

    2016-01-01

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells to enhance the device efficiency through increasing light trapping and absorption.