WorldWideScience

Sample records for hf thin films

  1. Epitaxial Thin Films of Y doped HfO2

    Science.gov (United States)

    Serrao, Claudy; Khan, Asif; Ramamoorthy, Ramesh; Salahuddin, Sayeef

    Hafnium oxide (HfO2) is one of a few metal oxides that is thermodynamically stable on silicon and silicon oxide. There has been renewed interest in HfO2 due to the recent discovery of ferroelectricity and antiferroelectricity in doped HfO2. Typical ferroelectrics - such as strontium bismuth tantalate (SBT) and lead zirconium titanate (PZT) - contain elements that easily react with silicon and silicon oxide at elevated temperatures; therefore, such ferroelectrics are not suited for device applications. Meanwhile, ferroelectric HfO2 offers promise regarding integration with silicon. The stable phase of HfO2 at room temperature is monoclinic, but HfO2 can be stabilized in the tetragonal, orthorhombic or even cubic phase by suitable doping. We stabilized Y-doped HfO2 thin films using pulsed laser deposition. The strain state can be controlled using various perovskite substrates and controlled growth conditions. We report on Y-doped HfO2 domain structures from piezo-response force microscopy (PFM) and structural parameters via X-ray reciprocal space maps (RSM). We hope this work spurs further interest in strain-tuned ferroelectricity in doped HfO2.

  2. Structural degradation of thin HfO2 film on Ge during the postdeposition annealing

    Science.gov (United States)

    Miyata, Noriyuki; Yasuda, Tetsuji; Abe, Yasuhiro

    2010-05-01

    Securing the thermal robustness of thin hafnium oxide (HfO2) film on the semiconductor surface is an important technical issue in the fabrication of the metal-oxide-semiconductor field-effect transistor devices, as the HfO2-based high-k gate stacks usually undergo high-temperature processes. In this study, the structural development of thin HfO2 film on a Ge surface during postdeposition annealing in an ultrahigh vacuum was examined to explore the origin for the initial degradation of thin HfO2 film. Void nucleation and subsequent two-dimensional void growth take place at 780-840 °C, while the chemical composition of the remaining Hf oxide is virtually stable. Both the void nucleation and growth processes show similar larger activation energy of about 10 eV. Based on the observed manner of void growth and the estimated activation energies, the authors propose that mass transport on the HfO2 surface is responsible for void nucleation in the HfO2 films on Ge. The authors also compare the present results with the previous studies on HfO2/Si structures, and suggest that similar surface process leads to the local Hf silicidation.

  3. Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

    Science.gov (United States)

    Nishimura, Tomonori; Xu, Lun; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-08-01

    We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ˜35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

  4. Mixed Al and Si doping in ferroelectric HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu

    2015-12-01

    Ferroelectric HfO2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ˜20 μC/cm2 and a coercive field strength of ˜1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 μC/cm2 up to 108 cycles.

  5. Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Takmeel, Qanit [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Zhou, Chuanzhen [Analytical Instrumentation Center, College of Engineering at North Carolina State University, Raleigh, North Carolina 27696 (United States); Chung, Ching-Chang; Jones, Jacob L. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)

    2015-12-14

    Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{sub 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.

  6. On the structural origins of ferroelectricity in HfO2 thin films

    Science.gov (United States)

    Sang, Xiahan; Grimley, Everett D.; Schenk, Tony; Schroeder, Uwe; LeBeau, James M.

    2015-04-01

    Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.

  7. Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

    OpenAIRE

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films ...

  8. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    Science.gov (United States)

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

  9. Effects of Hf incorporation on indium zinc oxide thin-film transistors using solution process

    Science.gov (United States)

    Li, Xifeng; Xin, Enlong; Zhang, Jianhua

    2015-01-01

    Thin-film transistors (TFTs) were fabricated by employing amorphous hafnium indium zinc oxide (HIZO) thin films as the active channel layer by the solution process. Thermogravimetry-differential thermal analysis, transmittance measurements, atomic force microscopy, scanning electron microscopy, x-ray diffraction, and Fourier transform infrared analysis were used to study the formation, structure, and optical properties of the HIZO films. The results showed that the addition of Hf to the IZO system resulted in suppression of carrier generation. The HIZO TFTs exhibited lower off-currents and higher onoff current ratios than IZO TFTs without Hf doping. HIZO TFTs with a Hf doping content of 5 at. % obtained a threshold voltage of 3.7 V, a mobility of 0.27 cm2 V-1 s-1, a subthreshold swing of 1.2 V/dec, and an on-off current ratio of 106.

  10. Crystal structure and band gap determination of HfO2 thin films

    NARCIS (Netherlands)

    Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

    2007-01-01

    Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

  11. The effects of layering in ferroelectric Si-doped HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2014-08-01

    Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  12. The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Takmeel, Qanit; Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States); Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696-7907 (United States)

    2014-08-18

    Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  13. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

    Science.gov (United States)

    Yue, Ruoyu; Barton, Adam T; Zhu, Hui; Azcatl, Angelica; Pena, Luis F; Wang, Jian; Peng, Xin; Lu, Ning; Cheng, Lanxia; Addou, Rafik; McDonnell, Stephen; Colombo, Luigi; Hsu, Julia W P; Kim, Jiyoung; Kim, Moon J; Wallace, Robert M; Hinkle, Christopher L

    2015-01-27

    In this work, we demonstrate the growth of HfSe2 thin films using molecular beam epitaxy. The relaxed growth criteria have allowed us to demonstrate layered, crystalline growth without misfit dislocations on other 2D substrates such as highly ordered pyrolytic graphite and MoS2. The HfSe2 thin films exhibit an atomically sharp interface with the substrates used, followed by flat, 2D layers with octahedral (1T) coordination. The resulting HfSe2 is slightly n-type with an indirect band gap of ∼ 1.1 eV and a measured energy band alignment significantly different from recent DFT calculations. These results demonstrate the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronic and optoelectronic applications.

  14. Molecular beam epitaxy of thin HfTe2 semimetal films

    Science.gov (United States)

    Aminalragia-Giamini, S.; Marquez-Velasco, J.; Tsipas, P.; Tsoutsou, D.; Renaud, G.; Dimoulas, A.

    2017-03-01

    Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure calculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center, providing evidence that HfTe2/AlN is an epitaxial topological Dirac semimetal.

  15. Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

    Science.gov (United States)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Funakubo, Hiroshi

    2015-07-01

    YO1.5-substituted HfO2 thin films with various substitution amounts were grown on (100) YSZ substrates by the pulsed laser deposition method directly from the vapor phase. The epitaxial growth of film with different YO1.5 amounts was confirmed by the X-ray diffraction method. Wide-area reciprocal lattice mapping measurements were performed to clarify the crystal symmetry of films. The formed phases changed from low-symmetry monoclinic baddeleyite to high-symmetry tetragonal/cubic fluorite phases through an orthorhombic phase as the YO1.5 amount increased from 0 to 0.15. The additional annular bright-field scanning transmission electron microscopy indicates that the orthorhombic phase has polar structure. This means that the direct growth by vapor is of polar orthorhombic HfO2-based film. Moreover, high-temperature X-ray diffraction measurements showed that the film with a YO1.5 amount of 0.07 with orthorhombic structure at room temperature only exhibited a structural phase transition to tetragonal phase above 450 °C. This temperature is much higher than the reported maximum temperature of 200 °C to obtain ferroelectricity as well as the expected temperature for real device application. The growth of epitaxial orthorhombic HfO2-based film helps clarify the nature of ferroelectricity in HfO2-based films (186 words/200 words).

  16. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    Science.gov (United States)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K. K.; Srivastava, Ritu; Singh, P. K.

    2015-12-01

    Hafnium oxide (HfO2) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (Dit) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  17. Persistent photoconductivity in Hf-In-Zn-O thin film transistors

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-10-01

    Passivated Hf-In-Zn-O (HIZO) thin film transistors suffer from a negative threshold voltage shift under visible light stress due to persistent photoconductivity (PPC). Ionization of oxygen vacancy sites is identified as the origin of the PPC following observations of its temperature- and wavelength-dependence. This is further corroborated by the photoluminescence spectrum of the HIZO. We also show that the gate voltage can control the decay of PPC in the dark, giving rise to a memory action.

  18. Local structure and local conduction paths in amorphous (In,Ga,Hf)-ZnO semiconductor thin films

    Science.gov (United States)

    Yang, Dong-Seok; Cheol Lee, Jae; Chung, JaeGwan; Lee, Eunha; Anass, Benayad; Sung, Nark-Eon; Min Lee, Jay; Jae Kang, Hee

    2012-10-01

    The local structure and local conduction paths of Ga-In-Zn-O (GIZO) and Hf-In-Zn-O (HIZO) amorphous thin films were investigated by the extended X-ray absorption fine structure (EXAFS). We found that the local hindrance paths of In-Ga and In-Hf exist in the conduction paths of amorphous GIZO and HIZO semiconductor thin films, respectively.

  19. Influence of HF acid catalyst concentration on properties of aerogel low-k thin films

    Science.gov (United States)

    Gaikwad, A. S.; Gupta, S. A.; Mahajan, A. M.

    2016-08-01

    The effect of hydrofluoric acid (HF) catalyst concentration in coating solution on chemical, physical and structural properties of silica aerogel thin films was investigated. The aerogel films were synthesized by using a sol-gel spin coating method followed by aging in ethanol and CO2 supercritical drying. The refractive index (RI) is observed to be reduced from 1.32 to 1.13 and porosity percentage increased from 30.21% to 71.64% in accordance with increasing HF concentration. Deposition of silica aerogel was confirmed from Fourier transform infrared spectroscopy measurement. The nanoporous nature of deposited films was confirmed from field effect scanning electron microscopy and observed pore diameter is in the range of 3.33 to 6.69 nm. The nanoporous nature of the film was also validated from atomic force microscopy and root mean square roughness was observed to be increased from 2.31 nm to 3.2 nm with increasing acid catalyst concentration in the coating solution. The calculated dielectric constant from CV measurement of fabricated metal-insulator-semiconductor structure for the silica aerogel formed at 0.8 ml HF concentration is observed to be 1.73. These deposited nanoporous silica aerogel low-k films with lower k value and smaller pore size have application as interlayer dielectric materials to minimize the disadvantages of porous materials.

  20. Oxygen engineering of HfO{sub 2-x} thin films grown by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU-Darmstadt (Germany); Zaumseil, Peter; Schroeder, Thomas [IHP, Frankfurt, Oder (Germany)

    2010-07-01

    Reactive molecular beam epitaxy (R-MBE) is an ideal tool for tailoring physical properties of thin films to specific needs. For the development of cutting-edge oxides for thin film applications a precise control of oxygen defects is crucial. R-MBE in combination with rf-activated oxygen allows reproducibly growing oxide thin films with precise oxidation conditions enabling oxygen engineering. R-MBE was used to grow Hf and HfO{sub 2{+-}}{sub x} thin films with different oxidation conditions on sapphire single crystal substrates. Structural characterization was carried out using rotating anode x-ray diffraction revealing highly textured to epitaxial thin films on c-cut sapphire. Furthermore, switching of film orientation by varying the oxidation conditions was observed demonstrating the role of oxygen in the growth procedure. The investigation of electrical properties using a four probe measurement setup showed conductivities in the range of 1000 {mu}{omega}cm for oxygen deficient HfO{sub 2-x} thin films. Optical properties were investigated using a photospectrometer and additionally x-ray photoelectron spectroscopy was carried out to study the band gap and valence states. Both techniques were used to monitor the oxygen content in deficient HfO{sub 2-x} thin films. Our results demonstrate the importance of oxygen engineering even in the case of 'simple' oxides.

  1. Current Progress of Hf (Zr)-Based High-k Gate Dielectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investigated. Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr)-based high-k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf (Zr)-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.

  2. Dual spiral sandwiched magnetic thin film inductor using Fe-Hf-N soft magnetic films as a magnetic core

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.H.; Yoo, D.W.; Jeong, J.H.; Kim, J.; Han, S.H. E-mail: sukhan@kist.re.kr; Kim, H.J

    2002-02-01

    Dual spiral sandwiched magnetic thin film inductors are fabricated using as-deposited Fe-Hf-N soft magnetic thin films. The hard axis of the magnetic film is aligned transverse to the direction of coil conductor current, which is expected to result in high inductance values as well as excellent frequency response. The inductance, Q factor and resistance are measured using impedance analyzer from 1 to 10 MHz. The inductance of fabricated thin film inductors are obtained within the range of 1.1-1.5 {mu}H. Also, the quality factor and coil resistance is obtained in the range of 3-38 at 8 MHz and 1-2.5 {omega}, respectively.

  3. Synthesis and photoluminescence property of silicon carbide nanowires thin film by HF-PECVD system

    Indian Academy of Sciences (India)

    Zhang Enlei; Wang Guosheng; Long Xiaozhu; Wang Zhumin

    2014-10-01

    A sample and scalable synthetic strategy was developed for the fabrication of nanocrystalline SiC (nc-SiC) thin film. Thin sheet of nanocrystalline diamond was deposited on Si substrate by hot filamentassisted plasma-enhanced chemical vapour deposition system (HF-PECVD). Further, the resulting carbonbased sheet was heated at 1200 °C to allow a solid state reaction between C and Si substrate to form the SiC thin films. The synthesized films mainly consist of -SiC nanowires with diameters of about 50 nm and tens of micrometers long. The nanowires axes lie along the [1 1 1] direction and possess a high density of planar defects. The -SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of 400 nm, which is significantly shifted to the blue compared with the reported PL results of SiC materials. The blue shift may be ascribed to morphology, quantum size confinement effects of the nanomaterials and abundant structure defects that existed in the nanowires.

  4. Effects of Hf Incorporation on Negative Bias-Illumination Stress Stability in Hf-In-Zn-O Thin-Film Transistors

    Science.gov (United States)

    Kim, Sangwook; Park, Jae Chul; Kim, Dae Hwan; Lee, Jang-Sik

    2013-04-01

    In this study, highly reliable amorphous oxide semiconductor-based thin-film transistors (TFTs) were developed. The Hf concentration was systematically changed in the Hf-incorporated In-Zn-O (HIZO) TFTs, and Hf played an important role in determining the negative bias-illumination instability. The process parameters were optimized in order to obtain HIZO TFTs with an excellent stability. HIZO can be processed on a 6-in. wafer at low temperatures and is almost transparent in the visible range. Thus this material is promising for use in current TFTs as well as future transparent electronic device components with good electrical performance and excellent stability.

  5. Soft Magnetic Thin Films FeCoHfO for High-Frequency Noise Suppression Applications

    Institute of Scientific and Technical Information of China (English)

    LU Guang-Duo; ZHANG Huai-Wu; TANG Xiao-Li

    2010-01-01

    @@ A series of FeCoHfO films were fabricated by dc magnetron reactive sputtering at varying partial pressure of oxygen(Po2)from 0 to 11.7%,and the electrical and magnetic properties of films have been studied.It is shown that optimal Fe43.29 Co19.51 Hf7.49O29.71 films with desired properties can be obtained when the films were prepared under Po2 = 5.1%.

  6. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  7. Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

    Science.gov (United States)

    Craciun, D.; Craciun, V.

    2017-04-01

    One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO2. The estimation of the valence band discontinuity (ΔEV) of HfO2/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO2 film deposited on a thick IZO film. A value of ΔEV = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO2 and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔEC = 0.65 ± 0.05 eV in HfO2/IZO heterostructure was then obtained.

  8. Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films.

    Science.gov (United States)

    Pothiraja, Ramasamy; Milanov, Andrian P; Barreca, Davide; Gasparotto, Alberto; Becker, Hans-Werner; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-04-21

    Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(iv) [Hf((i)PrNC(O)O(i)Pr)(4)] () and tetrakis-N,N,N'-trialkylureato hafnium(iv) [Hf((i)PrNC(O)N-(Me)Et)(4)] (), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO(2) thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.

  9. Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

    Directory of Open Access Journals (Sweden)

    Tae-Jun Ha

    2015-03-01

    Full Text Available Metal-oxide based thin-film transistors (oxide-TFTs are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

  10. Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films

    Science.gov (United States)

    Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; Henry, M. D.; Brumbach, M. T.; Ihlefeld, J. F.

    2017-02-01

    Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm-2 K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, and 1).

  11. Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics

    Science.gov (United States)

    Choi, Hyun-Sik; Jeon, Sanghun; Kim, Hojung; Shin, Jaikwang; Kim, Changjung; Chung, U.-In

    2011-10-01

    We evaluated the interface properties of amorphous hafnium-indium-zinc-oxide (a-HIZO) thin-film transistors (TFTs) with respect to various Hf contents. To this end, the subthreshold swing and the low-frequency noise (LFN) of the a-HIZO TFTs were measured and compared. From LFNs providing more accurate information, we quantitatively analyzed the interface trap densities and found that they decrease with increasing Hf contents. Although the acceptor-like tail state densities in bulk channel increase with Hf contents, higher Hf contents show lower threshold voltage shift under bias stress, implying that reliability characteristics of a-HIZO TFTs are more sensitive to interface quality rather than bulk property.

  12. Ferromagnetic resonance of Co sub 1 sub 0 sub 0 sub - sub x Hf sub x thin films

    CERN Document Server

    Baek, J S; Lee, S H; Lim, W Y

    1999-01-01

    In order to examine the temperature dependence of the magnetic properties in Co sub 1 sub 0 sub 0 sub - sub x Hf sub x (x=16, 24, 32 at.%) thin films, such as the effective magnetization M sub e sub f sub f , the spectroscopic splitting factor g, the exchange stiffness constant A, and the surface magnetic anisotropy constant K sub s , we carried out ferromagnetic resonance (FMR) experiments in the temperature range of 113 approx 293 K. Spin wave modes, as well as the surface modes, appeared in the Co sub 8 sub 4 Hf sub 1 sub 6 and the Co sub 7 sub 6 Hf sub 2 sub 4 thin films. In the Co sub 6 sub 8 Hf sub 3 sub 2 thin films, however, the spin wave modes appeared only below 233 K. The M sub e sub f sub f and the A increased slightly with decreasing temperature down to 113 K for all samples, but the g were almost constant, regardless of the temperature. The surface magnetic anisotropy constant K sub s sub 1 of the film-air interface and the surface magnetic anisotropy constant K sub s sub 2 of the film-substrate...

  13. Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

    Science.gov (United States)

    Fan, Zhen; Xiao, Juanxiu; Wang, Jingxian; Zhang, Lei; Deng, Jinyu; Liu, Ziyan; Dong, Zhili; Wang, John; Chen, Jingsheng

    2016-06-01

    Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.

  14. High strain rate sensitivity of hardness in quinary Ti-Zr-Hf-Cu-Ni high entropy metallic glass thin films

    Science.gov (United States)

    Zhao, Shaofan; Wang, Haibin; Xiao, Lin; Guo, Nan; Zhao, Delin; Yao, Kefu; Chen, Na

    2017-10-01

    Quinary Ti-Zr-Hf-Cu-Ni high-entropy metallic glass thin films were produced by magnetron sputter deposition. Nanoindentation tests indicate that the deposited film exhibits a relatively large hardness of 10.4±0.6 GPa and a high elastic modulus of 131±11 GPa under the strain rate of 0.5 s-1. Specifically, the strain rate sensitivity of hardness measured for the thin film is 0.05, the highest value reported for metallic glasses so far. Such high strain rate sensitivity of hardness is likely due to the high-entropy effect which stabilizes the amorphous structure with enhanced homogeneity.

  15. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    KAUST Repository

    Ho, Chih-Hsiang

    2017-06-27

    The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

  16. Electrical properties of radio-frequency sputtered HfO{sub 2} thin films for advanced CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Pranab Kumar; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics, National Institute of Technology Silchar, Silchar-788010, Assam, India Phone: +91-3842-224879 (India)

    2015-08-28

    The Hafnium oxide (HfO{sub 2}) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO{sub 2} film have been studied employing Al/HfO{sub 2}/p-Si metal–oxide–semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO{sub 2} film is obtained as 23,7.57×1011eV{sup −1} cm{sup −2} and 2.7×10{sup −5} Acm{sup −2}, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

  17. Transparent conductive Hf-doped In2O3 thin films by RF sputtering technique at low temperature annealing

    Science.gov (United States)

    Wang, G. H.; Shi, C. Y.; Zhao, L.; Diao, H. W.; Wang, W. J.

    2017-03-01

    Hf-doped In2O3 transparent conductive polycrystalline films (IHFO) were grown at a low substrate temperature by radio frequency magnetron sputtering for the applications of silicon-based solar cell. The effect of argon flow rate on the electrical and optical properties of the films was investigated. Low temperature thermal treatment improved IHFO films properties, with the optimal Hall mobility of 79.6 cm2/Vs and resistivity of 3.76 × 10-4 Ω cm. The average transmittance of the 807 nm thick IHFO films in the range of 300-1500 nm was above 83%. The carrier density was utilized to evaluate the plasma wavelength of IHFO conducting film which was 1.8 μm. The optimized IHFO film was then applied to amorphous silicon germanium thin film solar cells as the contacting layer. Compared to the cell without such a layer, the efficiency was higher by 0.35%.

  18. Effect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2016-05-01

    Hafnium oxide (HfO2) is the potentially useful dielectric material in both; electronics to replace the conventional SiO2 as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO2 thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film

  19. Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Corrêa, Silma Alberton, E-mail: silma.alberton@ufrgs.br; Brizzi, Simone; Schmeisser, Dieter [Applied Physics and Sensors, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)

    2016-01-15

    The electronic structure of HfO{sub 2} thin films is investigated employing resonant photoelectron spectroscopy (resPES). The detailed analysis of the O1s resonance profile enables the determination of the partial density of states for the valence and the conduction bands as well as the electronic band gap to be 6.2 eV. The position of the charge neutrality level is evaluated. Thereby, it is demonstrated that the resPES data are able to combine information both for the valence as well as for the conduction band states. In addition, evidences for intrinsic in-gap states attributed to polaronic and charge transfer states are given. Electronic charges within the atomic layer deposition-HfO{sub 2} films are identified, pointing out that the amount of charges is essential to determine the accurate position of the surface potentials.

  20. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  1. SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering

    Science.gov (United States)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S. V. S.; Pathak, A. P.

    2016-07-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO2 is the only alternative to reduce the leakage current. HfO2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I-V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  2. Extended x-ray absorption fine structure measurements on radio frequency magnetron sputtered HfO2 thin films deposited with different oxygen partial pressures.

    Science.gov (United States)

    Maidul Haque, S; Nayak, C; Bhattacharyya, Dibyendu; Jha, S N; Sahoo, N K

    2016-03-20

    Two sets of HfO2 thin film have been deposited by the radio frequency magnetron sputtering technique at various oxygen partial pressures, one set without any substrate bias and another set with a 50 W pulsed dc substrate bias. The films have been characterized by extended x-ray absorption fine structure (EXAFS) measurements at the Hf L3 edge, and the structural information obtained from analysis of the EXAFS data has been used to explain the macroscopic behavior of the refractive index obtained from spectroscopic ellipsometry measurements. It has been observed that the variation of refractive index with oxygen partial pressure depends on the Hf-Hf bond length for the set of films deposited without substrate bias, while for the other set of films deposited with pulsed dc substrate bias, it depends on the oxygen coordination of the nearest neighbor shell surrounding Hf sites.

  3. Monomeric malonate precursors for the MOCVD of HfO2 and ZrO2 thin films.

    Science.gov (United States)

    Pothiraja, Ramasamy; Milanov, Andrian; Parala, Harish; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-01-28

    New Hf and Zr malonate complexes have been synthesized by the reaction of metal amides with different malonate ligands (L = dimethyl malonate (Hdmml), diethyl malonate (Hdeml), di-tert-butyl malonate (Hdbml) and bis(trimethylsilyl) malonate (Hbsml)). Homoleptic eight-coordinated monomeric compounds of the type ML4 were obtained for Hf with all the malonate ligands employed. In contrast, for Zr only Hdmml and Hdeml yielded the eight-coordinated monomeric compounds of the type ML4, while using the bulky Hdbml and Hbsml ligands resulted into mixed alkoxo-malonato six-coordinated compounds of the type [ML2(OR)2]. Single crystal X-ray diffraction studies of all the compounds are presented and discussed, and they are found to be monomeric. The complexes are solids and in solution, they retain their monomeric nature as evidenced by NMR measurements. Compared to the classical beta-diketonate complexes, [M(acac)4] and [M(thd)4] (M = Hf, Zr; acac: acetylacetonate; thd: tetramethylheptadione), the new malonate compounds are more volatile, decompose at lower temperatures and have lower melting points. In particular, the homoleptic diethyl malonate complexes of Hf and Zr melt at temperatures as low as 62 degrees C. In addition, the compounds are very stable in air and can be sublimed quantitatively. The promising thermal properties makes these compounds interesting for metal-organic chemical vapor deposition (MOCVD). This was demonstrated by depositing HfO2 and ZrO2 thin films successfully with two representative Hf and Zr complexes.

  4. Feasibility of ZnO:Al/Ag/ZnO:Al multilayer source/drain electrode to achieve fully transparent HfInZnO thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jun [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Zhang, Jian-Hua, E-mail: jhzhang@staff.shu.edu.cn [Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Jiang, Xue-Yin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang, Zhi-Lin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China)

    2016-04-30

    We fabricated fully transparent hafnium indium zinc oxide (HfInZnO) thin film transistors (TFTs) with ZnO:Al(AZO)/Ag/ZnO:Al multilayer source/drain (S/D) electrodes. The effect of Ag interlayer thickness on the electrical and optical properties of AZO(60 nm)/Ag/AZO(60 nm) multilayer films was investigated. The AZO(60 nm)/Ag(10 nm)/AZO(60 nm) multilayer film shows a low sheet resistance of 10.5 Ω/square and a transmittance of 87%. Compared with HfInZnO-TFT with AZO electrode, the performance of the device with AZO/Ag/AZO multilayer electrode was significantly improved. The field effect mobility increased from 3.2 to 5.8 cm{sup 2}/V s, and the threshold voltage reduced from 2.3 to 0.1 V. The improvement was attributed to the lower resistivity of AZO/Ag/AZO multilayer film. The result indicates that AZO/Ag/AZO multilayer electrode is a promising S/D electrode for fully transparent HfInZnO-TFTs. - Highlights: • ZnO:Al/Ag/ZnO:Al multilayer films prepared by sputtering. • ZnO:Al/Ag/ZnO:Al multilayer films used as source/drain electrode. • Improved performance of HfInZnO thin film transistors (TFTs) with the multilayer film. • Contact resistance of HfInZnO-TFTs calculated.

  5. Influence of HF catalyst on the microstructure properties of ultra low-k thin films prepared by sol-gel method

    Institute of Scientific and Technical Information of China (English)

    He Zhi-Wei; Xu Da-Yin; Jiang Xiang-Hua; Wang Yin-Yue

    2008-01-01

    This paper reports that by using the hydrofluoric acid (HF) as the acid catalyst, F doped nanoporous low-k SiO2 thin films have been prepared by means of sol-gel method. The characterization of atomic force microscopy and Fourier transform infrared spectroscopy demonstrates that the HF catalyzed films are more hydrophobic. The N2 adsorption/desorption experiments show that the suited introduction of HF increases the porosity and decreases the pore size distribution (about 10 nm) in the films. The above results indicate that the hydrofluoric acid is the more suitable acid catalyst than the hydrochloric one for preparing nanoporous ultra low-k SiO2 thin films.

  6. Laser conditioning and electronic defect measurements of HfO sub 2 and SiO sub 2 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, M.R.; Staggs, M.; Rainer, F. (Lawrence Livermore National Lab., CA (USA)); Stathis, J.H. (International Business Machines Corp., Yorktown Heights, NY (USA). Thomas J. Watson Research Center)

    1990-12-17

    Multilayer HfO{sub 2}/SiO{sub 2} high reflectors (HR) and polarizers show a permanent increase in their 1064-nm damage thresholds following laser conditioning at subthreshold fluences. Threshold increases of 2--3x are typical. In an effort to better understand the conditioning effect we have made laser conditioning and electronic property measurements on single layers of these two materials. The laser damage threshold of 1-{mu}m thick e-beam deposited SiO{sub 2} was increased by laser conditioning for wavelengths ranging from 355 to 1046 nm. The damage threshold of HfO{sub 2} single layers was not influenced by sub-threshold illumination. As-deposited thin films of a-SiO{sub 2} are known to contain paramagnetic electronic defects. We have used electron paramagnetic resonance (EPR) to study the concentrations and types of defects present in single layer and multilayer films of HfO{sub 2} and SiO{sub 2}. E{prime} and oxygen hole centers with concentrations on the order of 10{sup 17}/cm{sup 3} have been measured in the SiO{sub 2} layers. A previously unreported defect has been observed for HfO{sub 2}. The concentration of defects was studied both before and after laser conditioning and damage with 1064-nm photons. These electronic structure measurements are discussed in relation to an electronic defect model for laser conditioning of dielectric multilayers. 27 refs., 11 figs., 1 tab.

  7. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Lambers, Eric; Rudawski, Nicholas G.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2015-04-01

    Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  8. Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

    Science.gov (United States)

    Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

    The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

  9. Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

    KAUST Repository

    Zhang, Bo

    2016-12-28

    We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

  10. Optical properties and structure of HfO{sub 2} thin films grown by high pressure reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    MartInez, F L [Departamento de Electronica y TecnologIa de Computadoras, Universidad Politecnica de Cartagena, Campus Universitario Muralla del Mar, E-30202 Cartagena (Spain); Toledano-Luque, M [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain); GandIa, J J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Carabe, J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Bohne, W [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Roehrich, J [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Strub, E [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Martil, I [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain)

    2007-09-07

    Thin films of hafnium oxide (HfO{sub 2}) have been grown by high pressure reactive sputtering on transparent quartz substrates (UV-grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous films. Optical properties of the films deposited on the silica substrates were investigated by transmittance and reflectance spectroscopy in the ultraviolet, visible and near infrared range. A numerical analysis method that takes into account the different surface roughness of the polycrystalline and amorphous films was applied to calculate the optical constants (refractive index and absorption coefficient). Amorphous films were found to have a higher refractive index and a lower transparency than polycrystalline films. This is attributed to a higher density of the amorphous samples, which was confirmed by atomic density measurements performed by heavy-ion elastic recoil detection analysis. The absorption coefficient gave an excellent fit to the Tauc law (indirect gap), which allowed a band gap value of 5.54 eV to be obtained. The structure of the films (amorphous or polycrystalline) was found to have no significant influence on the nature of the band gap. The Tauc plots also give information about the structure of the films, because the slope of the plot (the Tauc parameter) is related to the degree of order in the bond network. The amorphous samples had a larger value of the Tauc parameter, i.e. more order than the polycrystalline samples. This is indicative of a uniform bond network with percolation of the bond chains, in contrast to the randomly oriented polycrystalline grains separated by grain boundaries.

  11. Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

    Science.gov (United States)

    Wei, Yaowei; Pan, Feng; Zhang, Qinghua; Ma, Ping

    2015-01-01

    Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

  12. Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO{sub 2} thin films by TiO{sub 2} incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.W. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); He, G., E-mail: ganghe01@issp.ac.cn [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Zhou, L. [Department of Pharmacy, The First Affiliated Hospital of Anhui University of Chinese Medicine, Hefei 230031 (China); Chen, H.S. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.S. [National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Chen, X.F.; Deng, B. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); Lv, J.G. [Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061 (China); Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China)

    2014-10-25

    Highlights: • Sputtering-derived Hf{sub 1−x}Ti{sub x}O{sub 2} gate dielectrics have been deposited on Si substrates. • Increase in crystallization temperature and reduction in E{sub g} have been observed. • Formation of silicate layer for 9% TiO{sub 2}-doped HfO{sub 2}/Si sample has been detected. - Abstract: TiO{sub 2}-doped HfO{sub 2} gate dielectric thin films have been deposited on Si(1 0 0) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf{sub 1−x}Ti{sub x}O{sub 2} films related to TiO{sub 2} concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy–Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (α), and optical band gap (E{sub g}) have been determined precisely. Measurements from XRD have confirmed that TiO{sub 2} incorporating into HfO{sub 2} films leads to the increase of the crystallization temperature of HfO{sub 2} films with increasing the TiO{sub 2} concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO{sub 2} component in Hf{sub 1−x}Ti{sub x}O{sub 2} films. The increase in Urbach parameter E{sub U} with the increase of TiO{sub 2} concentration also suggests the rise in disorder for Hf{sub 1−x}Ti{sub x}O{sub 2} films. FTIR measurements for Hf{sub 1−x}Ti{sub x}O{sub 2}/Si gate stack indicate the existence of the interfacial layer regardless of the TiO{sub 2} concentration. For the 9% TiO{sub 2}-doped HfO{sub 2} samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO{sub 2} component in Hf{sub 1

  13. Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy

    Science.gov (United States)

    Kremmer, S.; Wurmbauer, H.; Teichert, C.; Tallarida, G.; Spiga, S.; Wiemer, C.; Fanciulli, M.

    2005-04-01

    The morphological and electrical evolution of HfO2 and ZrO2 thin films is investigated on the nanoscale using conducting atomic-force microscopy in ultrahigh vacuum. Films of different thicknesses have been grown by atomic layer deposition. With increasing film thickness the film structure changes from amorphous to polycrystalline. By conducting atomic-force microscopy using local current-voltage curve statistics and two-dimensional current imaging it is found that the formation of crystallites has different effects on the electrical properties of the two dielectrics. In the case of HfO2, the crystalline fraction causes weak spots in the oxide, whereas for the ZrO2 films the crystallites exhibit lower leakage currents compared to the amorphous matrix and leakage is mainly determined by thickness fluctuations.

  14. Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

    Science.gov (United States)

    Mu, Yifei; Zhao, Ce Zhou; Lu, Qifeng; Zhao, Chun; Qi, Yanfei; Lam, Sang; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2017-09-01

    This paper reports the low-dose-rate radiation response of Al-HfO2/SiO2-Si MOS devices, in which the gate dielectric was formed by atomic layer deposition (ALD) with 5-nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radiation response technique under continuous gamma (γ) ray exposure at a relatively low dose rate of 0.116 rad (HfO2)/s. Compared with conventional CV measurements, the proposed measurements extract significant variations of flat-band voltage shift of the hafnium based MOS devices. The large flat-band voltage shift is mainly attributed to the radiation-induced oxide trapped charges, which are not readily compensated by bias-induced charges produced over the measurement timescales (for timescales less than 5 ms). A negative flat-band voltage shift up to -1.02 V was observed under a positive biased irradiation with the total dose up to 40 krad (HfO2) and with the electric field of 0.5 MV/cm. This is attributed to net positive charge generation in the HfO2 oxide layer. The generated charges are transported towards the HfO2/SiO2 interface, and then form effective trapped holes in the HfO2. Similarly, a positive flat-band voltage shift up to 1.1 V was observed from irradiation under negative bias with an electric field of -0.5 MV/cm. The positive shift is mainly due to the accumulation of trapped electrons. Analyses of the experimental results suggest that both hole and electron trapping can dominate the radiation response performance of the HfO2-based MOS devices depending upon the applied bias. It was also found there was no distinct border traps with irradiation in all cases.

  15. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Takmeel, Qanit [Department of Materials Science and Engineering at the University of Florida, Gainesville, Florida 32611 (United States); Zhou, Chuanzhen [Analytical Instrumentation Center, College of Engineering at North Carolina State University, Raleigh, North Carolina 27696 (United States); Fancher, Chris M.; Jones, Jacob L. [Department of Materials Science and Engineering at North Carolina State University, Raleigh, North Carolina 27696 (United States); Lambers, Eric; Rudawski, Nicholas G. [Major Analytical Instrumentation Center at the University of Florida, Gainesville, Florida 32611 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering at the University of Florida, Gainesville, Florida 32611 (United States)

    2015-04-07

    Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  16. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

    Science.gov (United States)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-04-01

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO1.5-0.93HfO2 films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal-orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO2-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O3 and BiFeO3.

  17. Fabrication of resistive switching memory based on solution processed PMMA-HfO x blended thin films

    Science.gov (United States)

    Lee, Jae-Won; Cho, Won-Ju

    2017-02-01

    In this study, we developed PMMA-HfO x blended resistive random access memory (ReRAM) devices using solution processing to overcome the drawbacks of the individual organic and inorganic materials. Resistive switching behaviors of solution-processed PMMA, PMMA-HfO x , and HfO x film-based ReRAM devices were investigated. The poor electrical characteristic of PMMA and brittle mechanical properties of HfO x can be improved by blending PMMA and HfO x together. The PMMA-HfO x blended ReRAM device exhibited a larger memory window, stable endurance and retention, a lower operation power, and better set/reset voltage distributions. Furthermore, these new systems featured multilevel conduction states at different reset bias for non-volatile multilevel memory applications. Therefore, solution-processed PMMA-HfO x blended films are a promising material for non-volatile memory devices on flexible or wearable electronic systems.

  18. The effect of Gd doping on the atomic and electronic structure of HfO2 thin films.

    Science.gov (United States)

    Ketsman, Ihor; Sokolov, Andrei; Belashchenko, Kirill; Dowben, Peter; Losovyj, Yaroslav; Tang, Jinke; Wang, Zhenjun

    2008-03-01

    HfO2 is a promising oxide for many applications, including high-k gate dielectric for CMOS devices. In addition, Gd-doped HfO2 could lead to a dilute magnetic semiconductor and provide an efficient neutron detection medium due to huge neutron absorption cross section of Gd. Gd-doped HfO2 films deposited on both p-type and n-type silicon by PLD retain monoclinic phase at small doping levels, but can be stabilized in fluorite phase by increased doping [1]. At small doping levels, photoemission measurements indicate n-type character of the films as a result of overcompensation with oxygen vacancies. Depending on a doping level, the films form heterojunctions with good rectifying properties on n- or p-type silicon. Preliminary results show the potential ability of the formed diode structures to detect neutrons. [1] Ya.B.Losovyj, I.Ketsman et al.,APL, 91, 132908, (2007)

  19. Band Alignment and Optical Properties of (ZrO20.66(HfO20.34 Gate Dielectrics Thin Films on p-Si (100

    Directory of Open Access Journals (Sweden)

    Dahlang Tahir

    2011-11-01

    Full Text Available (ZrO20.66(HfO20.34 dielectric films on p-Si (100 were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO20.66(HfO20.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, The dielectric function ε (k, ω, index of refraction n and the extinction coefficient k for the (ZrO20.66(HfO20.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε (k,ω-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

  20. Solid-state dewetting of ultra-thin Au films on SiO₂ and HfO₂.

    Science.gov (United States)

    Seguini, G; Curi, J Llamoja; Spiga, S; Tallarida, G; Wiemer, C; Perego, M

    2014-12-12

    Ultra-thin Au films with thickness (h) ranging from 0.5 to 6.0 nm were deposited at room temperature (RT) by means of e-beam evaporation on SiO2 and HfO2. Due to the natural solid-state dewetting (SSD) of the as-deposited films, Au nanoparticles (NPs) were formed on the substrates. By properly adjusting the h value, the size and the density of the Au NPs can be finely tuned. For h = 0.5 nm, spherical-like Au NPs with diameter below 5 nm and density in the order of 10(12) Au NPs cm(-2) were obtained without any additional thermal treatment independently from the substrate. The dependence of the Au NPs characteristics on the substrate starts to be effective for h ≥ 1.0 nm where the Au NPs diameter is in the 5-10 nm range and the density is around 10(11) Au NPs cm(-2). The effect of a subsequent high temperature (400-800 °C) annealing in N2 atmosphere on the Au NPs was investigated as well. For h ≤ 1.0 nm, the Au NPs characteristics evidenced an excellent thermal stability. Whereas the thermal treatment affects the cristallinity of the Au NPs. For the thicker films (2.0 ≤ h ≤ 6.0 nm), the thermal treatment becomes effective to induce the SSD. The proposed methodology can be exploited for the synthesis of Au NPs with diameter below 10 nm on different substrates at RT.

  1. Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2

    Science.gov (United States)

    Seguini, G.; Llamoja Curi, J.; Spiga, S.; Tallarida, G.; Wiemer, C.; Perego, M.

    2014-12-01

    Ultra-thin Au films with thickness (h) ranging from 0.5 to 6.0 nm were deposited at room temperature (RT) by means of e-beam evaporation on SiO2 and HfO2. Due to the natural solid-state dewetting (SSD) of the as-deposited films, Au nanoparticles (NPs) were formed on the substrates. By properly adjusting the h value, the size and the density of the Au NPs can be finely tuned. For h = 0.5 nm, spherical-like Au NPs with diameter below 5 nm and density in the order of 1012 Au NPs cm-2 were obtained without any additional thermal treatment independently from the substrate. The dependence of the Au NPs characteristics on the substrate starts to be effective for h ≥ 1.0 nm where the Au NPs diameter is in the 5-10 nm range and the density is around 1011 Au NPs cm-2. The effect of a subsequent high temperature (400-800 °C) annealing in N2 atmosphere on the Au NPs was investigated as well. For h ≤ 1.0 nm, the Au NPs characteristics evidenced an excellent thermal stability. Whereas the thermal treatment affects the cristallinity of the Au NPs. For the thicker films (2.0 ≤ h ≤ 6.0 nm), the thermal treatment becomes effective to induce the SSD. The proposed methodology can be exploited for the synthesis of Au NPs with diameter below 10 nm on different substrates at RT.

  2. Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Chuan-Xin; Li, Jun, E-mail: SHUniverjunli@163.com; Fu, Yi-Zhou; Jiang, Xue-Yin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang, Jian-Hua [Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Zhang, Zhi-Lin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China)

    2015-11-23

    This study investigates the effect of hafnium doping on the density of states (DOSs) in HfZnSnO thin film transistors fabricated by dual-target magnetron co-sputtering system. The DOSs is extracted by temperature-dependent field-effect measurements, and they decrease from 1.1 × 10{sup 17} to 4.6 × 10{sup 16 }eV/cm{sup 3} with increasing the hafnium concentrations. The behavior of DOSs for the increasing hafnium concentration HfZnSnO thin film transistors can be confirmed by both the reduction of ΔV{sub T} under bias stress and the trapping charges calculated by capacitance voltage measurements. It suggests that the reduction in DOSs due to the hafnium doping is closely related with the bias stability and thermal stability.

  3. Influence of standing-wave electric field pattern on the laser damage resistance of HfO sub 2 thin films

    CERN Document Server

    Protopapa, M L; De Tomasi, F; Di Giulio, M; Perrone, M R; Scaglione, S

    2002-01-01

    The standing-wave electric field pattern that forms inside an optical coating as a consequence of laser irradiation is one of the factors influencing the coating laser-induced damage threshold. The influence of the standing-wave electric field profile on the damage resistance to ultraviolet radiation of hafnium dioxide (HfO sub 2) thin films was investigated in this work. To this end, HfO sub 2 thin films of different thicknesses deposited by the electron beam evaporation technique at the same deposition conditions were analyzed. Laser damage thresholds of the samples were measured at 308 nm (XeCl laser) by the photoacoustic beam deflection technique and microscopic inspections. The dependence of the laser damage threshold on the standing-wave electric field pattern was analyzed.

  4. Combinatorial approach to MgHf co-doped AlN thin films for Vibrational Energy Harvesters

    Science.gov (United States)

    Nguyen, H. H.; Oguchi, H.; Kuwano, H.

    2016-11-01

    In this report, we studied MgHf co-doped AlN ((Mg,Hf)xA11-xN) aiming for developing an AlN-based dielectric material with the large piezoelectric coefficient. To rapidly screen the wide range of composition, we applied combinatorial film growth approach. To get continuous composition gradient on a single substrate, films were deposited on Si (100) substrates by sputtering AlN and Mg-Hf targets simultaneously. Crystal structure was investigated by X-ray diffractometer equipped with a two-dimensional detector (2D-XRD). Composition was determined by Energy Dispersive Spectroscopy (EDS). These studies revealed that we successfully covered the widest ever composition range of 0 x x = 0.24, which will lead to the highest enhancement in the piezoelectric coefficient. The results of this study opened the way for high-throughput development of the dielectric materials.

  5. High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

    2016-09-01

    We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

  6. First Principles Calculation of Elastic Constants of Monoclinic HfO2 Thin Film%单斜相HfO2薄膜弹性常数的第一性原理计算

    Institute of Scientific and Technical Information of China (English)

    蔺玲; 邵淑英; 李静平

    2013-01-01

    用电子束蒸发沉积在K9玻璃基底上镀制HfO2薄膜,沉积温度为200℃,蒸发速率为0.03 nm/s.由X射线衍射谱可知薄膜出现明显结晶,且为单斜相和正交相混合结构,其中单斜相占明显优势.用Jade5软件分析得到单斜相HfO2的晶格常数a,b,c以及晶格矢量a和c之间的夹角β.基于得到的晶格常数建立了单斜相HfO2薄膜的晶体结构模型.同时建立固态单斜相HfO2的晶体结构模型进行对比.通过密度泛函理论(DFT)框架下的平面超软赝势法,采用两种不同的交换关联函数:局域密度近似(LDA)中的CA-PZ和广义梯度近似(GGA)中的质子平衡方程(PBE),计算了薄膜态和固态单斜晶相HfO2的弹性刚度系数矩阵Gij和弹性柔度系数矩阵Sij,Reuss模型、Voigt模型和Hill理论下的体积模量和剪切模量,材料平均杨氏模量和泊松比.此外还计算得到薄膜态和固态单斜晶相HfO2在不同方向上的杨氏模量.%HfO2 films are deposited by electron beam evaporation at a deposition rate of 0.03 nm/s and deposition temperature of 200 ℃ on K9 glass substrates. The films are observed to show a mixed structure of monoclinic and orthorhombic phase through X-ray diffraction and monoclinic phase is of obvious advantages. The structure parameters a, b, c and angel β of monoclinic HfO2 films are obtained using Jade5 software, based on which the crystal structure model is built. While solid crystal monoclinic HfO2 model is built to compare with the thin film one. Elastic stiffness constants of monoclinic HfO2 thin film and solid crystal are investigated using the plane waves ultrasoft pseudopotential technique based on the density functional theory (DFT) under two different exchange correlation functions of local density approximation (LDA) CA-PZ and generalized gradient approximation (GGA) PBE. Reuss, Voigt and Hill theories are used to estimate the bulk, shear and average Young's moduli and Possion ratio for polycrystalline HfO2

  7. SHI induced effects on the electrical and optical properties of HfO{sub 2} thin films deposited by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P., E-mail: appsp@uohyd.ernet.in

    2016-07-15

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO{sub 2} as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO{sub 2} is the only alternative to reduce the leakage current. HfO{sub 2} is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO{sub 2} thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO{sub 2}/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  8. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing

    Science.gov (United States)

    Mimura, Takanori; Katayama, Kiliha; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-08-01

    0.07YO1.5-0.93HfO2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiOx/SiO2/(001)Si substrates, and (111)ITO/(111)Pt/TiOx/SiO2/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ-2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiOx/SiO2/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiOx/SiO2/(001)Si substrate, which does not contain ITO. Polarization-hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (Pr) of 9.6 and 10.8 μC/cm2 and coercive fields (Ec) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  9. Improvement in ferroelectricity of Hf x Zr1- x O2 thin films using ZrO2 seed layer

    Science.gov (United States)

    Onaya, Takashi; Nabatame, Toshihide; Sawamoto, Naomi; Ohi, Akihiko; Ikeda, Naoki; Chikyow, Toyohiro; Ogura, Atsushi

    2017-08-01

    The effect of crystallized ZrO2 (ZrO2-seed), amorphous Hf0.43Zr0.57O2 (HZO; HZO-seed), and amorphous Al2O3 (Al2O3-seed) seed layers on the ferroelectricity of HZO films was investigated. The remanent polarization (2P\\text{r} = P\\text{r} + - P\\text{r} - ) of a TiN-electroded capacitor with a ZrO2-seed layer was much larger than that of capacitors with a HZO-seed, Al2O3-seed, or no seed layer. Furthermore, the maximum 2P r was exhibited when the thickness of the ZrO2-seed layer was 2 nm. Large grain growth was observed, which satisfied the same lattice pattern between ZrO2 and HZO films, and indicates that the ZrO2 seed layer plays an important role in the nucleation of the HZO film.

  10. Ti/Cu bilayer electrodes for SiNx-passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance

    Science.gov (United States)

    Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Lee, Eunha; Jung, Ji Sim; Lee, Kwang-Hee; Maeng, Wan-Joo; Kim, Hyun-Suk; Kim, Eok Su; Park, Kyung-Bae; Kwon, Jang-Yeon; Ryu, Myung Kwan; Lee, Sang Yoon

    2010-10-01

    In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx-passivated Hf-In-Zn-O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.

  11. An infrared study of thin-film formation on Si and Ge surfaces treated with aqueous NH4F and HF

    Science.gov (United States)

    Yota, J.; Burrows, V. A.

    1991-05-01

    The surface chemistry of Si and Ge after treatment with hydrofluoric acid buffered with ammonium fluoride (BHF) was studied using surface infrared spectroscopy. For each of these materials, the BHF not only dissolved the native oxide, but also deposited a thin inorganic film comprised of ammonium salts (NH4F and NH4F.HF). Through one or more complex reactions with the substrate, these salts slowly disappear as the thermodynamically very stable hexafluorometallate compounds [(NH4)2SiF6 and (NH4)2GeF6] form. The NH4F.HF disappearance correlates directly with the hexafluorometallate formation. Though the original fluoride and bifluoride salts are quite soluble in alcohols as well as in aqueous solutions, the hexafluorometallates are completely insoluble in alcohols, and can only be removed by thorough water rinse.

  12. Production of HfO2 thin films using different methods: chemical bath deposition, SILAR and sol-gel process

    Science.gov (United States)

    Kariper, İ. A.

    2014-08-01

    Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The optical properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

  13. Structural and optical properties of post-annealed atomic-layer-deposited HfO{sub 2} thin films on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, N.S., E-mail: n.bennett@hw.ac.uk [Nanomaterials Processing Lab., School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Cherkaoui, K. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Wong, C.S. [Nanomaterials Processing Lab., School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); O' Connor, É.; Monaghan, S.; Hurley, P. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Chauhan, L. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); McNally, P.J. [Nanomaterials Processing Lab., School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland)

    2014-10-31

    The effects of post-annealing conditions on solid-phase crystallization of atomic-layer-deposited HfO{sub 2} films grown on GaAs were investigated. Film properties, including crystallinity (preferential crystal orientation and crystallite size), thickness, density, permittivity, optical band gap and chemical composition were monitored as a function of annealing conditions. Following rapid thermal processing (RTP) in nitrogen ambient at temperatures from 325 °C to 625 °C, the initially produced amorphous/partially crystallized HfO{sub 2} films changed into a well-ordered crystalline structure with no detectable interfacial layer between the film and the GaAs substrate. Though HfO{sub 2} properties were predictable and similar to those of HfO{sub 2} on Si for low temperature processing, in the case of annealing at ≥ 475 °C, the thickness of the film was relatively increased compared to that of an as-grown film and displayed unexpected film characteristics. Changes after annealing in the depth profile data related to stoichiometry indicated that As oxide is formed within the HfO{sub 2} film during the RTP. The formation of As oxide in the HfO{sub 2} film, resulting from the underlying substrate, is dissimilar to previously published results which reported the presence of Ga oxide. - Highlights: • We investigated post-annealing on solid-phase crystallization of HfO{sub 2} films on GaAs. • Numerous properties were monitored as a function of annealing conditions. • HfO{sub 2} properties were similar to those of HfO{sub 2} on Si for low temperature processing. • As oxide is formed within the film during post-annealing due to the GaAs. • This is dissimilar to previous results which reported the presence of Ga oxide.

  14. Development and optimisation of thin soft ferromagnetic Fe-Co-Ta-N and Fe-Co-Al-N films with in-plane uniaxial anisotropy for HF applications

    Energy Technology Data Exchange (ETDEWEB)

    Bekker, V. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Seemann, K. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)]. E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2006-01-15

    Thin ferromagnetic Fe-Co-Ta-N and Fe-Co-Al-N films with strong in-plane uniaxial anisotropy were successfully prepared by RF reactive magnetron sputtering and subsequent vacuum field annealing. The magnetic properties of as-deposited and field annealed films were investigated in order to optimise the deposition and annealing conditions. The films exhibit good soft magnetic properties and an excellent thermal stability because of their nanocrystalline microstructure. The critical temperature of degradation of the magnetic properties is around 500{sup o}C; therefore, the films can be integrated in a standard semiconductor CMOS process. After a 1-h heat treatment at 400{sup o}C, the following magnetic properties were achieved: saturation polarisation J{sub s}=1.2T, coercive field {mu}{sub 0}H{sub c}=0.3mT, electrical resistivity {rho}=2x10{sup -6}{omega}m, anisotropy field {mu}{sub 0}H{sub a}=3.5-5mT. This results in a ferromagnetic resonance frequency of f{sub r}=1.8-2.1GHz and initial permeability of {mu}{sub low}=400-300. The influence of intrinsic material parameters, such as saturation polarisation, uniaxial anisotropy field, electrical resistivity and film thickness, on HF permeability was analysed. The frequency-dependent permeability spectra were measured up to 4.5GHz with a strip line parameter.

  15. Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

    Science.gov (United States)

    Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Kim, Wandong; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

    2011-02-01

    Negative bias-induced instability of amorphous hafnium indium zinc oxide (α-HIZO) thin film transistors (TFTs) was investigated at various temperatures. In order to examine temperature-induced effects, fabricated TFTs with different combinations of gate insulator and gate metal were stressed by a negative gate bias at various temperatures. As a result, it is proved that negative bias-induced hole-trapping in the gate insulators and temperature-enhanced electron injection from the gate metals occurs at the same time at all temperatures, and the instability of HIZO TFT is more affected by the dominant factor out of the two mechanisms.

  16. Study of the picosecond laser damage in HfO2/SiO2-based thin-film coatings in vacuum

    Science.gov (United States)

    Kozlov, A. A.; Papernov, S.; Oliver, J. B.; Rigatti, A.; Taylor, B.; Charles, B.; Smith, C.

    2016-12-01

    The laser damage thresholds of various HfO2/SiO2-based thin film coatings, including multilayer dielectric (MLD) gratings and high reflectors of different designs, prepared by E-beam and Plasma Ion Assisted Deposition (PIAD) methods, were investigated in vacuum, dry nitrogen, and after air-vacuum cycling. Single and multiple-pulse damage thresholds and their pulse-length scaling in the range of 0.6 to 100 ps were measured using a vacuum damage test station operated at 1053nm. The E-beam deposited high reflectors showed higher damage thresholds with square-root pulse-length scaling, as compared to PIAD coatings, which typically show slower power scaling. The former coatings appeared to be not affected by air/vacuum cycling, contrary to PIAD mirrors and MLD gratings. The relation between 1-on-1 and N-on-1 damage thresholds was found dependent on coating design and deposition methods.

  17. Si掺杂HfO2薄膜的铁电和反铁电性质%Ferro electric and antiferro electric prop erties of Si-dop ed HfO2 thin films

    Institute of Scientific and Technical Information of China (English)

    周大雨; 徐进; Johannes Müller; Uwe Schröder

    2014-01-01

    通过改变Si掺杂量制备出了具有显著铁电和反铁电特征的HfO2纳米薄膜,对其电滞回线、电容-电压和漏电流-电压特性以及物相温度稳定性进行了对比研究。反铁电薄膜的介电系数大于铁电薄膜,在电场加载和减载过程中发生的可逆反铁电-铁电相变导致了双电滞回线的出现,在室温至185◦C的测试温度范围内未出现反铁电→顺电相变。在电流-电压特性测量时观察到的负微分电阻效应归因于极化弛豫等慢响应机理的贡献。%Ferroelectric and antiferroelectric HfO2 nano-films were prepared by changing silicon doping concentration, and their basic properties were compared in terms of polarization hysteresis, capacitance-voltage and leakage-voltage behavior, as well as the effect of temperature on phase stability. Antiferroelectric thin film exhibits a higher dielectric constant than the ferroelectric film, and is characterized by the double polarization hysteresis loops due to reversible antiferroelectric-ferroelectric phase transition induced during loading and unloading processes of electric field. No antiferroelectric-paraelectric phase transition is observed at measuring temperatures up to 185 ◦C. The negative differential resistivity effect observed in leakage measurements is attributed to the contributions from slow response mechanisms like polarization relaxation.

  18. Effect of Hf addition on critical current density of (Y,Eu)Ba2Cu3.6O7-δ thin films prepared by trifluoroacetate metal organic deposition

    Science.gov (United States)

    Li, M. Y.; Liu, Z. Y.; Fang, Q.; Guo, Y. Q.; Lu, Y. M.; Bai, C. Y.; Cai, C. B.

    2016-12-01

    The critical current density (Jc) performance of YBCO coated conductors (CCs) under magnetic field has become a considerable limitation for its commercial application in recent years. It is well known that the proper amount of element doping into the CCs is a convenient method to increase flux pinning and then to enhance the Jc. In the present work, we firstly introduce the co-doping of Eu and Hf and study the effect on the performance of YBa2Cu3.6O7-δ thin films. Three types of high temperature superconducting thin films, i.e., YBa2Cu3.6O7-δ, (Y,Eu)Ba2Cu3.6O7-δ and Hf doped (Y,Eu)Ba2Cu3.6O7-δ were prepared on the oxide buffered metallic substrates by using trifluoroacetate metal organic deposition (TFA-MOD). The component and structure of the as-prepared samples were characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM) and atomic force microscopy (AFM). Superconducting properties were measured with a SQUID magnetometer. It was revealed that the (Y,Eu)Ba2Cu3.6O7-δ thin films exhibit better out-plane and in-plane texture compared with the pure YBa2Cu3.6O7-δ thin film. The Jc of (Y,Eu)Ba2Cu3.6O7-δ thin film was improved compared with pure YBCO thin film. In case of Hf doping, however, the biaxial texture became worse while the in-field Jc performance was enhanced, implying the increase of flux pinning with proper Hf addition.

  19. Orientation and growth behavior of CaHfO3 thin films on non-oxide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Y. W. [University of Florida; Norton, David P. [University of Florida; Budai, John D [ORNL

    2007-01-01

    The growth behavior of CaHfO3 on (001) Ni and Ge substrates was examined. CaHfO3 is a perovskite insulator that is suitable for applications as a buffer layer or gate dielectric. The tendency for CaHfO3 growth on both (001) Ni and (001) Ge substrates is to orient with the CaHfO3 (200)+(121) planes parallel to the surface, which corresponds to the (110) orientation in the pseudo-cubic geometry. This differs from that of CaHfO3 on perovskites, such as (001) LaAlO3, where a pseudo-cube-on-cube orientation is observed.

  20. Influence of a highly doped buried layer for HfInZnO thin-film transistors

    Science.gov (United States)

    Chong, Eugene; Lee, Sang Yeol

    2012-01-01

    Hafnium-indium-zinc oxide (HIZO) channel thin-film transistors (TFTs) have been reported with a 12 nm thick indium-zinc oxide (IZO)-buried layer. IZO-buried HIZO TFTs show excellent electrical characteristics and stabilities such as a high mobility (µFE) of ˜41.4 cm2 V-1 s-1 which is three times higher than that of conventional HIZO TFTs and significantly enhanced bias-temperature-induced stability. High mobility could be obtained since the current path is mainly formed on a highly conductive buried layer with a high carrier concentration over 1018 cm-3. Enhanced stability could be achieved mainly because the generation of the additional trap state was considerably reduced near the drain region due to a relatively short path since the current flows vertically from a highly conductive buried layer to a drain electrode through the HIZO channel via a relatively low carrier density region.

  1. Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2

    OpenAIRE

    Choi, HW; Lai, PT; Xu, JP; Deng, LF; Liu, YR

    2009-01-01

    OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by...

  2. Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

    Science.gov (United States)

    Shimizu, Takao; Yokouchi, Tatsuhiko; Oikawa, Takahiro; Shiraishi, Takahisa; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Gruverman, Alexei; Funakubo, Hiroshi

    2015-03-01

    The ferroelectric properties of the (Hf0.5Zr0.5)O2 films on Pt/Ti/SiO2/Si substrate are investigated. It is found that the films crystallized by annealing in O2 and N2 atmospheres have similar crystal structures as well as remanent polarization and coercive fields. Weak temperature and frequency dependences of the ferroelectric properties indicate that the hysteretic behavior in HfO2-based films originates not from the mobile defects but rather from the lattice ionic displacement, as is the case of the typical ferroelectric materials.

  3. Nanomechanical and nanotribological behaviors of hafnium boride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Shahla, E-mail: chowdhury.shahla@gmail.com [Department of Mechanical Science and Engineering, University of Illinois at Urbana Champaign, 1206 W Green Street, Urbana, IL 61801 (United States); Department of Mechanical Engineering, Texas A& M University, 3123 TAMU, College Station, TX (United States); Polychronopoulou, Kyriaki, E-mail: kpolychronopoulou@gmail.com [Department of Mechanical Science and Engineering, University of Illinois at Urbana Champaign, 1206 W Green Street, Urbana, IL 61801 (United States); Mechanical Engineering Department, Khalifa University of Science Technology & Research, P.O Box 127788, Abu Dhabi (United Arab Emirates); Cloud, Andrew, E-mail: andrewncloud@gmail.com [Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, 1304 W Green Street, Urbana, IL 61801 (United States); Abelson, John R., E-mail: abelson@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, 1304 W Green Street, Urbana, IL 61801 (United States); Polycarpou, Andreas A., E-mail: apolycarpou@tamu.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana Champaign, 1206 W Green Street, Urbana, IL 61801 (United States); Department of Mechanical Engineering, Texas A& M University, 3123 TAMU, College Station, TX (United States)

    2015-11-30

    Nanocrystalline HfB{sub 2}, HfBN and multilayer HfB{sub 2}/HfBN films were deposited using chemical vapor deposition. Half of the amorphous as-deposited films were subjected to annealing at 700 °C to obtain their annealed equivalent samples. Nanoindentation and nanoscratch experiments were performed to measure their mechanical properties, friction and scratch/wear behavior. The annealed films showed higher hardness values compared to the as-deposited films, with the HfB{sub 2} film exhibiting the highest hardness. All three films exhibited similar shear strength around 3 GPa for as-deposited and 5.5 GPa for annealed films, implying reduced delamination propensity for the annealed samples. The annealed HfBN and multilayer HfB{sub 2}/HfBN films exhibited lower friction and wear, compared to the rest of the films. Specifically, the annealed multilayer HfB{sub 2}/HfBN films, exhibited an order of magnitude lower wear, compared to the HfB{sub 2} films, making them excellent candidates for low friction and low wear hard coating applications. - Highlights: • Hard, dense thin films of HfB2/HfBN were deposited using chemical vapor deposition. • Annealed films exhibited high shear strength, and thus reduced propensity to delamination. • Hardness values alone do not correlate with friction and wear performance. • Annealed multi-layered HfB2/HfBN films exhibited outstanding friction and wear resistance.

  4. Fabrication and examination of epitaxial HTSC/isolator thin films on sapphire substrates for application in high frequency devices; Herstellung und Untersuchung von epitaktischen HTSL/Isolator-Schichten auf Saphirsubstraten zur Anwendung in HF-Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Kittel, H.

    1995-10-01

    The use of high temperature superconductors (HTSC) like YBCO with distinct lower surface resistance compared to normal conductors allows miniaturisation of high frequency (HF) circuits. The object of this work was the fabrication of YBCO thin films on low loss sapphire substrates applicable for stripline devices. To induce epitaxial growth and to avoid chemical reaction at the film-substrate boundary buffer layers were investigated. The examination of the growth properties and especially of the surface impedance has been allotted particular importance. In contrast to CaTiO{sub 3} it was possible to deposit CeO{sub 2}-buffer layers in direct growth up to a thickness of about 30 nm without cracks. The films show all growth properties required and even Laue-oscillations being a feature of high quality growth enabling the determination of film thickness distribution without destruction. The YBCO growth-, transport- and HF-properties meet the ones of YBCO films on standard substrates. A remarkable result is that the mosaic distribution of the CEO film, itself strongly dependend on film thickness, does not influence that of the YBCO film considerably. Rather it changes its shape subsequently due to YBCO deposition. A further particularity in contrast to deposition on standard substrates is the need to adjust the substrate heater tempeature for deposition of YBCO films with thicknesses {>=}300 nm needed for HF application. To demonstrate their usefullness some stripline devices like planar coils and side coupled filters have been fabricated and characterised. (orig.)

  5. Effect of Hf addition on critical current density of (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films prepared by trifluoroacetate metal organic deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, M.Y., E-mail: limengyaorz@163.com [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Liu, Z.Y. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China); Fang, Q. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Guo, Y.Q.; Lu, Y.M.; Bai, C.Y. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China); Cai, C.B., E-mail: cbcai@t.shu.edu.cn [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China)

    2016-12-15

    Highlights: • This work firstly introduce the Eu and Hf co-doping effect on the performance of YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films, prepared on oxide buffered metallic substrates by trifluoroacetate metal organic deposition (TFA-MOD). • (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} film showed a very different surface morphology, smooth and regular, compared to YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film, which has never been reported before. • The J{sub c} value under self-field of (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film was obviously improved compared to YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film. • (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film with Hf addition exhibited enhancement of J{sub c} value under magnetic fields. - Abstract: The critical current density (J{sub c}) performance of YBCO coated conductors (CCs) under magnetic field has become a considerable limitation for its commercial application in recent years. It is well known that the proper amount of element doping into the CCs is a convenient method to increase flux pinning and then to enhance the J{sub c}. In the present work, we firstly introduce the co-doping of Eu and Hf and study the effect on the performance of YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films. Three types of high temperature superconducting thin films, i.e., YBa{sub 2}Cu{sub 3.6}O{sub 7-δ}, (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} and Hf doped (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} were prepared on the oxide buffered metallic substrates by using trifluoroacetate metal organic deposition (TFA-MOD). The component and structure of the as-prepared samples were characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM) and atomic force microscopy (AFM). Superconducting properties were measured with a SQUID magnetometer. It was revealed that the (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films exhibit better out-plane and in-plane texture compared with the pure YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin

  6. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  7. Interfacial Layer Growth Condition Dependent Electrical Conduction in HfO2/SiO2 Heterostructured Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, S. K.; Misra, D.

    2012-01-01

    The electrical conduction mechanism contributing to the leakage current at different field regions has been studied in this work. The current-voltage (I-V) measurement of TiN/HfO{sub 2}/SiO{sub 2}/P-Si nMOS capacitor has been taken for two different interfacial layer (SiO{sub 2}) growth conditions such as in situ steam grown (ISSG) and chemical processes. It is observed that Poole-Frenkel mechanism is the dominant conduction mechanism in high field region whereas Ohmic conduction is dominant in the low field region. Also it is seen that the gate leakage current is reduced for the devices having chemically grown interfacial layer compared to that of ISSG devices. Both trap energy level ({phi}{sub t}) and activation energy (E{sub a}) increase in the chemically grown interfacial layer devices for the Poole-Frenkel and Ohmic conduction mechanisms respectively in comparison to ISSG devices. Trap energy level ({phi}{sub t}) of {approx} 0.2 eV, obtained from Poole-Frenkel mechanism indicates that the doubly ionized oxygen vacancies (V{sup 2-}) are the active defects and are contributing to the leakage current in these devices.

  8. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks

    Science.gov (United States)

    Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C.

    2016-09-01

    Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films (DADA ALD process. We surmise that the interfacial metal germanate layer also function as a diffusion barrier limiting excessive Ge uptake into the dielectric film. An ALD Al2O3 passivation layer of thickness ≥1.5 nm is required to minimize Ge diffusion for developing highly conformal and textured HfO2 based higher-k dielectrics on Ge substrates using the DADA ALD process.

  9. On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.

    Science.gov (United States)

    Lim, Nomin; Efremov, Alexander; Yeom, Geun Young; Kwon, Kwang-Ho

    2014-12-01

    The study of etching characteristics and mechanisms for HfO2 and Si in CF4/O2/Ar and CHF3/O2/Ar inductively-coupled plasmas was carried out. The etching rates of HfO2 thin films as well as the HfO2/Si etching selectivities were measured as functions of Ar content in a feed gas (0-50% Ar) at fixed fluorocarbon gas content (50%), gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters as well as the differences in plasma chemistries for CF4- and CHF3-based plasmas were analyzed using Langmuir probe diagnostics and 0-dimensional plasma modeling. It was found that, in both gas systems, the non-monotonic (with a maximum at about 15-20% Ar) HfO2 etching rate does not correlate with monotonic changes of F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the HfO2 etching process is affected by the factors determining the formation and decomposition kinetics of the fluorocarbon polymer layer. These factor are the fluxes of CF(x) (x = 1, 2) radicals, O atoms and H atoms.

  10. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  11. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  12. Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

    Science.gov (United States)

    Lee, Young Hwan; Kim, Han Joon; Moon, Taehwan; Do Kim, Keum; Dam Hyun, Seung; Park, Hyeon Woo; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

    2017-07-01

    HfO2-ZrO2 solid-solution films were prepared by radio frequency sputtering, and the subsequent annealing process was optimized to render enhanced ferroelectric behavior. The target power, working pressure and O2 partial pressure ratios were varied, along with the annealing gas, time and temperature. Then, the film’s structural and electrical properties were carefully scrutinized. Oxygen-deficient conditions were necessary during the sputter deposition to suppress grain growth, while annealing by O2 gas was critical to avoid defects and leakage problems. It is expected that the grain size difference under various deposition conditions combined with the degree of TiN top and bottom electrode oxidation by O2 gas will result in different ferroelectric behaviors. As a result, Hf0.5Zr0.5O2 prepared by radio frequency sputtering showed optimized ferroelectricity at 0% of O2 reactive gas, with a doubled remnant polarization value of ˜20 μC cm-2 at a thickness of 11 nm. Film growth conditions with a high growth rate (4-5 nm min-1) were favorable for achieving the ferroelectric phase film, which feasibly suppressed both the grain growth and accompanying monoclinic phase formation.

  13. Production of HfO2 thin films using different methods:chemical bath deposition, SILAR and sol-gel process

    Institute of Scientific and Technical Information of China (English)

    İ.A.Kariper

    2014-01-01

    Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, succes-sive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films pro-duced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The opti-cal properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

  14. 不同基底上HfO2/SiO2多层膜的力学性能%Mechanical Properties of HfO2/SiO2 Thin Films on Different Substrates

    Institute of Scientific and Technical Information of China (English)

    王河; 贺洪波; 张伟丽

    2013-01-01

    The HfO2/SiO2 films are deposited on K9 glass and Y3Al5O12 (YAG) crystal substrates by electron beam technology respectively.Nano-scratch tests are taken to investigate the mechanical properties of films respectively.The results show that the modulus of the films deposited on K9 and YAG are 34.8 GPa and 38.5 GPa respectively and the substrates have few effect on the elasticity modulus of the films.The adhesive force of the film is 7 mN on K9 substrate and 5 mN on YAG,and they present different failure modes.This can be attributed to the weak adhesion and large divergence of modulus between film and YAG crystal.The chemical binding state and elasticity modulus between the film and the substrate are taken to explain the different mechanical behaviors of the films on YAG and K9 substrates.%用电子束蒸发技术在K9玻璃及YAG晶体上沉积了HfO2/SiO2多层膜,采用纳米划痕仪对薄膜的力学性能进行了研究.实验结果表明:沉积在YAG和K9的多层膜弹性模量分别为34.8 GPa和38.5 GPa,基底对薄膜的弹性模量影响较小;YAG和K9上薄膜的粘附失效临界附着力分别为5 mN和7 mN,薄膜与YAG基底的结合状态较K9基底的差,并且呈现不同破坏模式.从薄膜之间及膜基界面处的界面结合状态和弹性模量两方面分析解释了YAG基底和K9基底上薄膜的不同力学行为.

  15. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  16. Microstructure and electrical properties of XInZnO (X = Ti, Zr, Hf) films and device performance of their thin film transistors—The effects of employing Group IV-B elements in place of Ga

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Mi Ran [Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jeon, Haseok; Na, Sekwon; Kim, Sunho [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Donggeun [Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Hyoungsub [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Hoo-Jeong, E-mail: hlee@skku.edu [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-06-25

    Highlights: ► The effects of adding Group IV B elements have been evaluated in this study. ► Adding alloying elements affected the oxygen vacancy and carrier concentrations, and mobility. ► Adding alloying elements enhanced the bias stability in the order of Ti, Zr and Hf. -- Abstract: In this study, we systematically investigated the effects of employing Group IV-B metals (Ti, Zr, and Hf) in place of Ga in GaInZnO films by fabricating XInZnO films (X = Ti, Zr, or Hf) with a various ratio of the Group IV-B elements. Materials characterization using various analytical methods (including transmission electron microscopy and X-ray photoelectron spectroscopy) elucidates that upon the addition of a small amount of the alloying elements, while the microstructure turned into amorphous from nanocrystalline, the oxygen vacancy concentration decreased systematically along with the carrier concentration. The device characteristics (threshold voltage and field-effect mobility) of the transistors fabricated from the films sensitively reflect the changes in the film properties (carrier concentration and bulk mobility). The bias stability enhanced with the increase of the ratio of the alloying elements to an extent that apparently increases in the order of Ti, Zr and Hf, which is reverse to the order of the electronegativity.

  17. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  18. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  19. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-09-01

    Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.

  20. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  1. Clarification and mitigation of marked J c decrease at low magnetic fields of BaHfO3-doped SmBaCuO3 thin films deposited on seed layer

    Science.gov (United States)

    Watanabe, Yutaro; Ichino, Yusuke; Yoshida, Yutaka; Ichinose, Ataru

    2016-07-01

    In accordance with the results of our previous research, a low-temperature growth (LTG) technique is effective for expanding the lower growth temperature region of c-axis-orientated SmBa2Cu3O y (SmBCO) thin films. However, BaHfO3 (BHO)-doped LTG films show a marked decrease in J c at low magnetic fields compared with conventional PLD films. In this study, we aimed to clarify the mechanism of J c decrease and investigated the thickness dependence of the seed layer on the (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (100) single crystal. The obtained results indicate that J c decreased at low magnetic fields as the thickness of the seed layer increased. It is suggested that flux line kinks produced by flux motion in the seed layer would lead to the depinning of flux lines from BHO nanorods in the upper layer. Thus, we added Y2O3 into the seed layer to trap flux lines in the seed layer. Consequently, we improved J c in the low magnetic field region even in the films prepared by using the LTG technique.

  2. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  3. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  4. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  5. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  6. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  7. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  8. The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

    Science.gov (United States)

    Kwon, Jang-Yeon; Jung, Ji Sim; Son, Kyoung Seok; Lee, Kwang-Hee; Park, Joon Seok; Kim, Tae Sang; Park, Jin-Seong; Choi, Rino; Jeong, Jae Kyeong; Koo, Bonwon; Lee, Sang Yoon

    2010-11-01

    This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfOx and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.

  9. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  10. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  11. Thermoelectric properties of TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn thin films and superlattices with reduced thermal conductivities

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Tino

    2013-08-21

    Rising energy costs and enhanced CO{sub 2} emission have moved research about thermoelectric (TE) materials into focus. The suitability of a material for usage in TE devices depends on the figure of merit ZT and is equal to α{sup 2}σTκ{sup -1} including Seebeck coefficient α, conductivity σ, temperature T and thermal conductivity κ. Without affecting the power factor α{sup 2}σ, using nanostructuring, ZT should here be increased by a depressed thermal conductivity. As half-Heusler (HH) bulk materials, the TE properties of TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn have been extensively studied. Here, semiconducting TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn thin films were fabricated for the first time by dc magnetron sputtering. On MgO (100) substrates, strongly textured polycrystalline films were obtained at substrate temperatures of about 450 C. The film consisted of grains with an elongation perpendicular to the surface of 55 nm. These generated rocking curves with FWHMs of less than 1 . Structural analyses were performed by X ray diffraction (XRD). Having deposition rates of about 1 nms{sup -1} within shortest time also films in the order of microns were fabricated. For TiNiSn the highest in-plane power factor of about 0.4 mWK{sup -2}m{sup -1} was measured at about 550 K. In addition, at room temperature a cross-plane thermal conductivity of 2.8 Wm{sup -1}K{sup -1} was observed by the differential 3ω method. Because the reduction of thermal conductivity by mass fluctuation is well-known and interface scattering of phonons is expected, superlattices (SL) were fabricated. Therefore, TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn were successively deposited. While the sputter cathodes were continuously running, for fabrication of SLs the substrates were moved from one to another. The high crystal quality of the SLs and the sharp interfaces were proven by satellite peaks (XRD) and Scanning Transmission Electron Microscopy (STEM). For a SL with a periodicity of 21 nm (Ti

  12. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  13. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  14. The study of multilayers Fe/Hf and Ni/Hf by slow positron beam technique

    Science.gov (United States)

    Tashiro, Mutsumi; Nakajyo, Terunobu; Murashige, Yusuke; Koizumi, Tomoya; Kanazawa, Ikuzo; Komori, Fumio; Soe, We-Hyo; Yamamoto, Ryoichi; Ito, Yasuo

    1997-05-01

    The S-parameters versus the incident positron energy are measured in the Ni/Hf multilayer, thin Hf film, thin Fe film and the bilayer Fe/Hf. We have analyzed the change in vacancy-type defects in these multilayers and thin films with the deposition temperature in the MBE system.

  15. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  16. Zapping thin film transistors

    NARCIS (Netherlands)

    Golo-Tosic, N.; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD

  17. Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering

    Institute of Scientific and Technical Information of China (English)

    JIANG Ran; LI Zi-Feng

    2009-01-01

    The chemical structure of ultrathin Hf oxide films (< 10 nm) fabricated by a standard sputtering method is investigated using x-ray spectroscopy and Rutherford backscattering spectroscopy. According to the experiments,oxygen species are impacted to the HfO2/Si interface during the initial sputtering, and then released back to the upper Hf02 region driven by the oxygen concentration grads. A vacuum annealing can greatly enhance this recovery process. Additionally, significant SiO2 reduction in the interface is observed after the vacuum annealing for the thick HfO2 films in our experiment. It might be an effective method to confine the interracial layer thickness by sputtering thick HfO2 in no-oxygen ambient.

  18. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  19. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  20. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  1. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  2. Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode

    Science.gov (United States)

    Shimizu, Takao; Yokouchi, Tatsuhiko; Shiraishi, Takahisa; Oikawa, Takahiro; Sankara Rama Krishnan, P. S.; Funakubo, Hioshi

    2014-09-01

    The effect of the heat treatment conditions on the constituent phases and electrical properties of (Hf0.5Zr0.5)O2 films deposited by the metalorganic chemical vapor deposition was investigated. By using a low temperature or short duration for post-heat treatment after the deposition, the volume fraction of the tetragonal phase increases, resulting in a high dielectric constant. On the other hand, the volume fraction of the monoclinic phase increased in the films that were heat-treated at higher temperatures and exposed to longer heat treatment duration. The ferroelectric with and dielectric properties of these films were greatly inferior. Superior ferroelectric properties a significant volume fraction of orthorhombic phase were achieved for intermediate heat treatment conditions. These results give useful information to understand the origin of the ferroelectricity and to control the phases and electrical properties in HfO2-based films.

  3. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  4. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  5. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  6. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  7. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  8. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  9. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  10. Recent Developments in High-Temperature Shape Memory Thin Films

    Science.gov (United States)

    Motemani, Y.; Buenconsejo, P. J. S.; Ludwig, A.

    2015-11-01

    High-temperature shape memory alloy (HTSMA) thin films are candidates for development of microactuators with operating temperatures exceeding 100 °C. This article reviews recent advances and developments in the field of HTSMA thin films during the past decade, with focus on the systems Ti-Ni-X (X = Hf, Zr, Pd, Pt and Au), Ti-Ta, and Au-Cu-Al. These actuator films offer a wide range of transformation temperatures, thermal hysteresis, and recoverable strains suitable for high-temperature applications. Promising alloy compositions in the systems Ti-Ni-Hf, Ti-Ni-Pd, Ti-Ni-Au, and Au-Cu-Al are highlighted for further upscaling and development. The remaining challenges as well as prospects for development of HTSMA thin films are also discussed.

  11. First Thin Film Festival

    Science.gov (United States)

    Samson, Philippe

    2005-05-01

    The constant evolution of the satellite market is asking for better technical performances and reliability for a reduced cost. Solar array is in front line of this challenge. This can be achieved by present technologies progressive improvement in cost reduction or by technological breakthrough. To reach an effective End Of Live performance100 W/kg of solar array is not so easy, even if you suppose that the mass of everything is nothing! Thin film cells are potential candidate to contribute to this challenge with certain confidence level and consequent development plan validation and qualification on ground and flight. Based on a strong flight heritage in flexible Solar Array design, the work has allowed in these last years, to pave the way on road map of thin film technologies . This is encouraged by ESA on many technological contracts put in concurrent engineering. CISG was selected cell and their strategy of design, contributions and results will be presented. Trade-off results and Design to Cost solutions will discussed. Main technical drivers, system design constraints, market access, key technologies needed will be detailed in this paper and the resulting road-map and development plan will be presented.

  12. Thin Film Inorganic Electrochemical Systems.

    Science.gov (United States)

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  13. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  14. Spinodal dewetting of thin films

    Science.gov (United States)

    Jaiswal, Prabhat K.; Puri, S.

    2009-01-01

    Stable thin liquid films are of various scientific and technological applications, e.g., in optical coating, painting technologies, coating thin wires and fibers, lubricants, adhesives, etc. However, the instabilities in a thin film may lead to rupture, hole formation, and other morphological changes which amplify the nonuniformity in the thin film [1]. This morphological evolution in an unstable thin film is generally known as `dewetting' [2]. There have recently been a number of theoretical and experimental studies on dewetting in thin films [3-6]. The process of `spinodal dewetting' comes into the category of a general class of phenomena, spinodal decomposition [7]. The pattern formation taking place during dewetting can also be of great importance in nanotechnology, e.g., for preparing quantum dots [8], nanorings [9], etc. We numerically solve the nonlinear two-dimensional thin film equation [2] for a thin liquid film subjected to the long range van der Waals attraction and short range Born repulsion. The simulation results for the temporal evolution of domains and height profile along diagonal direction of the lattice show the `hills and valleys' short of structures which is the typical morphology obtained during the spinodal dewetting [10]. We obtain the dynamical correlation function and structure factor showing the existence of a characteristic length scale in the system at late time. We give the scaling arguments for the length scale of the drops to be proportional to t1/3 which is in agreement with our numerical results for the domain growth.

  15. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  16. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  17. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  18. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  19. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  20. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  1. Characteristics of atomic layer deposition grown HfO{sub 2} films after exposure to plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y.W. [Kookje Electric Korea Co. LTD, 4-2 Chaam-Dong, Chonan-Si, Chungcheongnam-Do (Korea, Republic of)]. E-mail: ywkim@kekorea.co.kr; Roh, Y. [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoo, Ji-Beom [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)]. E-mail: jibyoo@skku.ac.kr; Kim, Hyoungsub [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2007-01-22

    Ultra thin HfO{sub 2} films were grown by the atomic layer deposition (ALD) technique using tetrakismethylethylaminohafnium (Hf[N(CH){sub 3}(C{sub 2}H{sub 5})]{sub 4}) and ozone (O{sub 3}) as the precursors and subsequently exposed to various plasma conditions, i.e., CCP (capacitively coupled plasma) and MMT (modified magnetron typed plasma) in N{sub 2} or N{sub 2}/O{sub 2} ambient. The conventional CCP treatment was not effective in removing the carbon impurities, which were incorporated during the ALD process, from the HfO{sub 2} films. However, according to the X-ray photoelectron spectroscopy measurements, the MMT treated films exhibited a significant reduction in their carbon contents and the efficient incorporation of nitrogen atoms. Although the incorporated nitrogen was easily released during the post-thermal annealing of the MMT treated samples, it was more effective than the CCP treatment in removing the film impurities. Consequently, the MMT treated samples exhibited excellent electrical properties as compared to the as-deposited HfO{sub 2} films, including negligible hysteresis (flatband voltage shift), a low leakage current, and the reduced equivalent oxide thickness of the gate stack. In conclusion, MMT post treatment is more effective than conventional CCP treatment in improving the electrical properties of high-k films by reducing the carbon contamination and densifying the as-deposited defective films.

  2. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  3. Thin-film metal hydrides.

    Science.gov (United States)

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  4. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  5. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  6. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  7. The effect of Cu doping concentration on resistive switching of HfO{sub 2} film

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Tingting; Tan, Tingting, E-mail: tantt@nwpu.edu.cn; Liu, Zhengtang

    2015-10-01

    Graphical abstract: - Highlights: • The Cu doped and undoped HfO{sub 2} films were fabricated. • The improved RS behaviors were observed for Cu doped HfO{sub 2} film with BRS. • The 9.7% doped HfO{sub 2}:Cu film showed both BRS and URS behaviors. • The related switching mechanisms were illustrated. - Abstract: The Cu-doped and undoped HfO{sub 2} films were fabricated and the effect of Cu doping concentration on resistive switching (RS) of HfO{sub 2} film was demonstrated. The X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical bonding states of Cu in HfO{sub 2}:Cu film. The improved RS behaviors in terms of ON/OFF ratio and switching parameters were observed for Cu-doped HfO{sub 2} film with bipolar resistive switching (BRS) behavior. With the increase of Cu doping concentration, the 9.7% Cu-doped HfO{sub 2} film showed both BRS and unipolar resistive switching (URS) behaviors with large operating voltages. The space charge limited current (SCLC) effect was proposed to interpret the switching mechanism of HfO{sub 2}:Cu films with BRS behavior and the URS behavior can be explained by the migration of Cu ions.

  8. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  9. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  10. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  11. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; V. I. Kuznetsov

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  12. Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Szymańska, Magdalena, E-mail: magdalena_szymanska@its.waw.pl [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland); Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Gierałtowska, Sylwia; Wachnicki, Łukasz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Grobelny, Marcin; Makowska, Katarzyna [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Mroczyński, Robert [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-05-01

    Highlights: • Structural and electrical characterization of HfO{sub x} and HfO{sub x}N{sub y} thin films. • Analysis of the influence of deposition process parameters on properties of films. • Investigation of the post-deposition annealing on HfO{sub x} and HfO{sub x}N{sub y} properties. • Experiment has been designed with use of Taguchi's orthogonal arrays. • The most favorable annealing temperature of HfO{sub x} and HfO{sub x}N{sub y} is 300 °C. - Abstract: The purpose of this work was to compare the structural and electrical properties of magnetron sputtered hafnium oxide (HfO{sub x}) and hafnium oxynitride (HfO{sub x}N{sub y}) thin films. A careful analysis of the influence of deposition process parameters, among them: pressure in the reactor chamber, Ar and O{sub 2} flow rate, power applied to the reactor chamber and deposition time, on electro-physical properties of HfO{sub x} and HfO{sub x}N{sub y} layers has been performed. In the course of this work we performed number of experiments by means of Taguchi's orthogonal arrays approach. Such a method allowed for the determination of dielectric layers properties depending on process parameters with relatively low amount of experiments. Moreover, the effects of post-deposition annealing on electrical characteristics of metal–insulator–semiconductor (MIS) structures with HfO{sub x} or HfO{sub x}N{sub y} gate dielectric and its structural properties have also been reported. Investigated hafnia thin films were characterized by means of spectroscopic ellipsometry (SE), electrical characteristics measurements, atomic force microscopy (AFM), X-ray diffraction spectroscopy (XRD) and Rutherford backscattering spectrometry (RBS)

  13. Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode.

    Science.gov (United States)

    Wang, Yi; Wang, Hao; Ye, Cong; Zhang, Jun; Wang, Hanbin; Jiang, Yong

    2011-10-01

    The high-k dielectric HfO(2) thin films were deposited by pulsed laser deposition in nitrogen atmosphere. Rapid thermal annealing effect on film surface roughness, structure and electrical properties of HfO(2) film was investigated. The mechanism of interfacial reaction and the annealing atmosphere effect on the interfacial layer thickness were discussed. The sample annealed in nitrogen shows an amorphous dominated structure and the lowest leakage current density. Capacitors with high-k HfO(2) film as gate dielectric were fabricated, using Pt, Au, and Ti as the top gate electrode whereas Pt constitutes the bottom side electrode. At the gate injection case, the Pt- and Au-gated metal oxide semiconductor devices present a lower leakage current than that of the Ti-gated device, as well as similar leakage current conduction mechanism and interfacial properties at the metal/HfO(2) interface, because of their close work function and chemical properties.

  14. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

    Science.gov (United States)

    Qiu, X. Y.; Zhang, S. Y.; Zhang, T.; Wang, R. X.; Li, L. T.; Zhang, Y.; Dai, J. Y.

    2016-09-01

    Amorphous Ge-doped HfOx films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOx matrix and the existence of HfSiOx interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104 cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfOx film.

  15. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  16. Thin Film Research. Volume 1

    Science.gov (United States)

    1985-05-30

    1928), and later by Coper, Frommer and Zocher (1931), followed. From that time, when thin film technology was in its early stages of evolution, we...personal communication (1983). Cau, Marcel, Comtes Rendues 186, 1293 (1928). Coper, H. K., Frommer , L., and Zocher, H., Ztschr. Elektrochem. 37, 571

  17. Ferroelectric Thin Film Development

    Science.gov (United States)

    2003-12-10

    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  18. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    Science.gov (United States)

    Kim, Chang-Jung; Kim, Sangwook; Lee, Je-Hun; Park, Jin-Seong; Kim, Sunil; Park, Jaechul; Lee, Eunha; Lee, Jaechul; Park, Youngsoo; Kim, Joo Han; Shin, Sung Tae; Chung, U.-In

    2009-12-01

    We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in HIZO films. The thin film transistors (TFTs) with amorphous HIZO active channel exhibit good electrical properties with field effect mobility of around 10 cm2/Vs, S of 0.23 V/decade, and high Ion/off ratio of over 108, enough to operate the next electronic devices. In particular, under bias-temperature stress test, the HIZO TFTs with 0.3 mol % (Hf content) showed only 0.46 V shift in threshold voltage, compared with 3.25 V shift in HIZO TFT (0.1 mol %). The Hf ions may play a key role to improve the instability of TFTs due to high oxygen bonding ability. Therefore, the amorphous HIZO semiconductor will be a prominent candidate as an operation device for large area electronic applications.

  19. Impact of lanthanum on the modification of HfO2 films structure

    Institute of Scientific and Technical Information of China (English)

    T. P. Smirnova; L.V. Yakovkina; V.O. Borisov

    2015-01-01

    LaxHf1–xOy thin films with various concentrations of La, homogeneous and nonhomogeneous distributions of elements throughout the films thickness was purposefully grown by CVD. The composition of the films and their chemical structures were characterized throughout the films thickness by X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectrometry (EDXA). A full picture of the film crystallinity was provided by the combination of grazing incidence X-ray diffraction (GIXRD) synchrotron radiation (SR) and high resolution transmission electron microscopy (HR TEM). It was shown that La acted as “molar volume modulator” and stabilized the nonequilibrium atT≤1300 °C cubic phases. The samples with La content in range of 7 at.%films microstructure was revealed.

  20. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh

    2010-01-01

    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  1. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  2. Reactively sputtered titanium carbide thin films: Preparation and properties

    Science.gov (United States)

    Eizenberg, M.; Murarka, S. P.

    1983-06-01

    The low resistivity and refractory nature of titanium carbide makes it potentially useful as a diffusion barrier in thin film metallization schemes. In the present investigation, deposition and properties of thin titanium carbide films have been investigated. The films were deposited by reactive radio frequency sputtering in methane-argon mixtures on a variety of substrates. The effects of methane to argon ratio, total sputtering pressure, and power on the film deposition rate, composition and properties were determined. There were interactive effects of these parameters on the composition and properties of these films. Resistivity increased with carbon content; for Ti/C≥1 it was ˜200 μΩ cm. Stress that was compressive was maximum in the nearly stoichiometric TiC film. Grain size was small in all films, especially so in carbon rich films. All stoichiometric titanium carbide films were resistant to HF solutions. Films with TiC/≥1 dissolved easily in ethylene dinitrilo tetra acetric acid (EDTA) solution.

  3. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  4. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  5. Growth and properties of hafnicone and HfO(2)/hafnicone nanolaminate and alloy films using molecular layer deposition techniques.

    Science.gov (United States)

    Lee, Byoung H; Anderson, Virginia R; George, Steven M

    2014-10-08

    Molecular layer deposition (MLD) of the hafnium alkoxide polymer known as "hafnicone" was grown using sequential exposures of tetrakis(dimethylamido) hafnium (TDMAH) and ethylene glycol (EG) as the reactants. In situ quartz crystal microbalance (QCM) experiments demonstrated self-limiting reactions and linear growth versus the number of TDMAH/EG reaction cycles. Ex situ X-ray reflectivity (XRR) analysis confirmed linear growth and measured the density of the hafnicone films. The hafnicone growth rates were temperature-dependent and decreased from 1.2 Å per cycle at 105 °C to 0.4 Å per cycle at 205 °C. The measured density was ∼3.0 g/cm(3) for the hafnicone films at all temperatures. Transmission electron microscopy images revealed very uniform and conformal hafnicone films. The XRR studies also showed that the hafnicone films were very stable with time. Nanoindentation measurements determined that the elastic modulus and hardness of the hafnicone films were 47 ± 2 and 2.6 ± 0.2 GPa, respectively. HfO2/hafnicone nanolaminate films also were fabricated using HfO2 atomic layer deposition (ALD) and hafnicone MLD at 145 °C. The in situ QCM measurements revealed that HfO2 ALD nucleation on the hafnicone MLD surface required at least 18 TDMAH/H2O cycles. Hafnicone alloys were also fabricated by combining HfO2 ALD and hafnicone MLD at 145 °C. The composition of the hafnicone alloy was varied by adjusting the relative number of TDMAH/H2O ALD cycles and TDMAH/EG MLD cycles in the reaction sequence. The electron density changed continuously from 8.2 × 10(23) e(-)/cm(3) for pure hafnicone MLD films to 2.4 × 10(24) e(-)/cm(3) for pure HfO2 ALD films. These hafnicone films and the HfO2/hafnicone nanolaminates and alloys may be useful for flexible thin-film devices.

  6. Photoconductivity of thin organic films

    Science.gov (United States)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  7. Photoconductivity of thin organic films

    Energy Technology Data Exchange (ETDEWEB)

    Tkachenko, Nikolai V. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Chukharev, Vladimir, E-mail: Vladimir.Chukharev@tut.fi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Kaplas, Petra; Tolkki, Antti; Efimov, Alexander [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland)

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 {mu}m), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C{sub 60}), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C{sub 60} and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10{sup 3} {Omega} m and 3 x 10{sup 4} {Omega} m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10{sup 8} {Omega} m in dark to 3.1 x 10{sup 6} {Omega} m under the light.

  8. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  9. Selective epitaxial growth for YBCO thin films

    NARCIS (Netherlands)

    Damen, C.A.J.; Smilde, H.-J.H.; Blank, D.H.A.; Rogalla, H.

    1998-01-01

    A novel selective epitaxial growth (SEG) technique for (YBCO) thin films is presented. The method involves the deposition of a thin (about 10 nm) metal layer, in the desired pattern, on a substrate before the deposition of the superconducting thin film. During growth the metal reacts with the YBCO,

  10. High stability of amorphous hafnium-indium-zinc-oxide thin film transistor

    Science.gov (United States)

    Chong, Eugene; Jo, Kyoung Chul; Lee, Sang Yeol

    2010-04-01

    Time dependence of the threshold voltage (Vth) shift in amorphous hafnium-indium-zinc oxide (a-HIZO) thin film transistor has been reported under on-current bias temperature stress measured at 60 °C. X-ray photoelectron spectroscopy results show the decrease in oxygen vacancies by Hf metal cations in a-HIZO systems after annealing process. High stability of a-HIZO systems has been observed due to low charge injection from the channel layer. Hf metal cations have been effectively incorporated into the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation.

  11. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    OpenAIRE

    Zhou, Dayu; Guan, Yan; Vopson, Melvin Marian; Xu, Jin; Liang, Hailong; Cao,Fei; Dong, Xianlin; Johannes, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2Ec), the reversal process is dominated by the ther...

  12. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  13. Thin film fuel cell electrodes.

    Science.gov (United States)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  14. Exotic thin films made from cobalt ferrite

    NARCIS (Netherlands)

    Lisfi, A.; Lisfi, A.; Williams, C.M.; Johnson, A.; Chang, P.; Corcoran, H.; Nguyen, L.T.; Lodder, J.C.; Morgan, W.; Soohoo, R.F.

    2005-01-01

    Epitaxial CoFe2O4 thin films have been grown by PLD on (100) MgO substrate. Two types of spin-reorientation have been observed in such films upon annealing or increasing the film-thickness. In the as-deposited layers and at low thickness the easy axis is confined to the normal to the film plane

  15. Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET

    Science.gov (United States)

    Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

    2016-11-01

    Ultrathin Hf-Ti-O higher k gate dielectric films ( 2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) 9.4%, low equivalent gate oxide thickness (EOT) of 0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ( V fb - 1) V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on/ I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO2. With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length ( W/ L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on, I on/ I off ratio in the magnitude of 105, and peak transconductance, as well as suitable threshold voltage (-0.3 -0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL swing <70 mV/decade.

  16. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  17. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  18. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    Science.gov (United States)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  19. Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Duo [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Jia, Tingting; Zheng, Li; Xu, Dawei; Wang, Zhongjian; Xia, Chao; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2013-07-15

    Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO{sub 2} films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better interfacial structure than HfO{sub 2}. X-ray photoelectron spectroscopy (XPS) spectra indicated that main component of the interfacial layer of HfAlO sample was Hf–Si–O and Al–Si–O bonds, the valence band offset value between the HfAlO film and Si substrate was calculated to be 2.5 eV. The dominant leakage current mechanism of the samples was Schottky emission at a low electric field (<1.4 MV/cm), and Poole–Frenkel emission mechanism at a higher electric field (>1.4 MV/cm). The equivalent oxide thicknesses (EOT) of the HfAlO samples were 1.0 nm and 1.3 nm, respectively. The density of interface states between dielectric and substrate were calculated to be 1.2 × 10{sup 12} eV{sup −1}cm{sup −2} and 1.3 × 10{sup 12} eV{sup −1}cm{sup −2}, respectively. In comparison with HfO{sub 2} film, HfAlO film has good interfacial structure and electrical performance.

  20. Raman spectroscopy of thin films

    Science.gov (United States)

    Burgess, James Shaw

    Raman spectroscopy was used in conjunction with x-ray diffraction and x-ray photoelectron spectroscopy to elucidate structural and compositional information on a variety of samples. Raman was used on the unique La 2NiMnO6 mixed double perovskite which is a member of the LaMnO3 family of perovskites and has multiferroic properties. Raman was also used on nanodiamond films as well as some boron-doped carbon compounds. Finally, Raman was used to identify metal-dendrimer bonds that have previously been overlooked. Vibrational modes for La2NiMnO6 were ascribed by comparing spectra with that for LaMnO3 bulk and thin film spectra. The two most prominent modes were labeled as an asymmetric stretch (A g) centered around 535 cm-1 and a symmetric stretch (B g) centered around 678 cm. The heteroepitaxial quality of La2NiMnO 6 films on SrTiO3 (100) and LaAlO3 (100) substrates were examined using the Raman microscope by way of depth profile experiments and by varying the thickness of the films. It was found that thin films (10 nm) had much greater strain on the LaAlO3 substrate than on the SrTiO3 substrate by examining the shifts of the Ag and the Bg modes from their bulk positions. Changes in the unit cell owing to the presence of oxygen defects were also monitored using Raman spectroscopy. It was found that the Ag and Bg modes shifted between samples formed with different oxygen partial pressures. These shifts could be correlated to changes in the symmetry of the manganese centers due to oxygen defects. Raman spectroscopy was used to examine the structural and compositional characteristics of carbon materials. Nanocrystalline diamond coated cutting tools were examined using the Raman Microscope. Impact, abrasion, and depth profile experiments indicated that delamination was the primary cause of film failure in these systems. Boron doped material of interest as catalyst supports were also examined. Monitoring of the G-mode and intensities of the D- and G-modes indicated that

  1. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  2. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  3. HITPERM soft magnetic underlayers for perpendicular thin film media

    Science.gov (United States)

    Kumar, S.; Ohkubo, T.; Laughlin, D. E.

    2002-05-01

    In this work, a class of nanocrystalline alloys, HITPERM (Fe, Co)-M-B-Cu (M=Zr, Hf, Nb, and etc.) found to exhibit excellent soft-magnetic properties in bulk were used as soft-magnetic underlayers for perpendicular thin film media. A Ti intermediate layer was used to promote a (00ṡ2) texture and exchange de-couple the magnetic layer (CoCrPt) from the soft-magnetic underlayer. Specimens were deposited at both room and elevated temperature (˜ 250 °C). The results of x-ray diffraction and transmission electron microscope structural studies, along with magnetic properties are presented.

  4. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  5. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  6. Magnetostrictive thin films for microwave spintronics.

    Science.gov (United States)

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  7. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  8. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  9. Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films.

    Science.gov (United States)

    Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin; Lee, Young Hwan; Moon, Taehwan; Kim, Keum Do; Hyun, Seung Dam; Fengler, Franz; Schroeder, Uwe; Hwang, Cheol Seong

    2016-06-22

    In this study, the changes in the structural and electrical properties of ferroelectric Hf1-xZrxO2 films with various Zr contents (0.26-0.70) were systematically examined during electric field cycling, resulting in a "wake-up" effect. To quantify the degree of wake-up effect, a "variable" polarization as the difference between remanent and saturation polarization was suggested as a new parameter, which could be calculated by excluding the linear dielectric contribution from the total electric displacement. Here, the variable polarization value could be minimized for an optimized Zr content of 0.43, which was slightly lower than the value for the largest remanent polarization. The polymorphism in Hf1-xZrxO2 thin films is known to be complicated due to the relatively small energy differences between various phases, such as the monoclinic, tetragonal, and orthorhombic phases. The variations in the polarization-electric field characteristics and dielectric constant values could be qualitatively and quantitatively understood based on the competition of various polymorphs that are dependent on the Zr content. Furthermore, a schematic model for the spatial distribution of mixed phases was suggested for Hf1-xZrxO2 films with various Zr contents based on the experimental observations.

  10. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

    2015-01-23

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  11. Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-27

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  12. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  13. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  14. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  15. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  16. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  17. Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

    KAUST Repository

    Salas-Villasenor, A. L.

    2010-06-29

    Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.

  18. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Directory of Open Access Journals (Sweden)

    Masaharu Kobayashi

    2016-02-01

    Full Text Available Internet-of-Things (IoT technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  19. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Science.gov (United States)

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-02-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  20. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  1. Micromotors using magnetostrictive thin films

    Science.gov (United States)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  2. The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

    Science.gov (United States)

    Aliev, V. S.; Gerasimova, A. K.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Badmaeva, I. A.

    2016-08-01

    Non-stoichiometric HfOx films of different chemical composition (x partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf4O7 suboxide and stoichiometric HfO2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf4O7 suboxide concentration is maximal at x = 1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO2, when annealed at high temperature.

  3. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  4. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.

    Science.gov (United States)

    Chernikova, Anna; Kozodaev, Maksim; Markeev, Andrei; Negrov, Dmitrii; Spiridonov, Maksim; Zarubin, Sergei; Bak, Ohheum; Buragohain, Pratyush; Lu, Haidong; Suvorova, Elena; Gruverman, Alexei; Zenkevich, Andrei

    2016-03-23

    Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions.

  5. Interfacial Effects on Pentablock Ionomer Thin Films

    Science.gov (United States)

    Etampawala, Thusitha; Ratnaweera, Dilru; Osti, Naresh; Shrestha, Umesh; Perahia, Dvora; Majewski, Jaroslaw

    2011-03-01

    The interfacial behavior of multi block copolymer thin films results from a delicate balance between inherent phase segregation due to incompatibility of the blocks and the interactions of the individual blocks with the interfaces. Here in we report a study of thin films of ABCBA penta block copolymers, anionically synthesized, comprising of centered randomly sulfonated polystyrene block to which rubbery poly-ethylenebutalene is connected, terminated by blocks of poly-t-butylstyrene, kindly provided by Kraton. AFM and neutron reflectometry studies have shown that the surface structure of pristine films depends on film thickness and ranges from trapped micelles to thin layered films. Annealing above Tg for the styrene block results in rearrangements into relatively featureless air interface. Neutron reflectivity studies have shown that annealed films forms layers whose plane are parallel to the solid substrate with the bulky block at the air interface and the ionic block at the solid interface.

  6. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  7. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    Science.gov (United States)

    2014-09-01

    AFRL-RX-WP-JA-2014-0214 STRUCTURE AND OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) Neil R. Murphy AFRL...OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...publication is available at http://dx.doi.org/10.1016/j.optmat.2014.08.005 14. ABSTRACT Hafnium oxide (HfO2) films were grown by sputter-deposition by

  8. On the scalability of doped hafnia thin films

    Science.gov (United States)

    Adelmann, C.; Schram, T.; Chew, S.-A.; Woicik, J. C.; Brizzi, S.; Tallarida, M.; Schmeisser, D.; Horiguchi, N.; Van Elshocht, S.; Ragnarsson, L.-Å.

    2014-03-01

    The scaling behavior of Gd- and Al-doped HfO2 films as gate dielectrics in metal-oxide-semiconductor (MOS) capacitors was studied. For equivalent oxide thicknesses (EOTs) in the range of 10 Å, crystallized Gd:HfO2 showed higher leakage current densities than crystallized Al:HfO2, with undoped HfO2 in between. Ultimately, the scalability of Al:HfO2 was limited by the ability to crystallize the films at a given thermal budget. As a result, for post-deposition annealing at 800 °C, the EOT of Al:HfO2 based MOS capacitors was limited to ˜8 Å. However, for such an EOT, leakage current densities were reduced by about 100× with respect to HfO2. This demonstrates the high potential of Al:HfO2 for low-standby-power MOS devices.

  9. Thermal evolution of CaO-doped HfO{sub 2} films and powders

    Energy Technology Data Exchange (ETDEWEB)

    Barolin, S A; Sanctis, O A de [Lab. Materiales Ceramicos, FCEIyA, Universidad Nacional de Rosario, IFIR-CONICET (Argentina); Caracoche, M C; Martinez, J A; Taylor, M A; Pasquevich, A F [Departamento de Fisica, FCE, Universidad Nacional de La Plata, IFLP-CONICET (Argentina); Rivas, P C, E-mail: oski@fceia.unr.edu.a [Facultad de Ciencias Agronomicas y Forestales, Universidad Nacional de La Plata, IFLP (Argentina)

    2009-05-01

    Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SOFC because both are oxygen-ion conductors. The main challenge for these compounds is to reduce the relatively high value of the activation energies vacancies diffusion, which is influenced by several factors. In this work the thermal evolution of CaO-HfO{sub 2} materials have been investigated. (CaO)y-Hf(1-y)O(2-y) (y = 0.06, 0.14 y 0.2) coatings and powders were synthesized by chemical solution deposition (CSD). Films were deposited onto alumina substrates by Dip Coating technique, the burning of organic waste was carried out at 500 deg. C under normal atmosphere and then the films were thermally treated at intervals of temperature rising to a maximum temperature of 1250 deg. C. By means Glazing Incidence X-ray Diffraction (rho-2theta configuration) the phases were studied in the annealed films. On the other hand, the thermal evolution and crystallization process of powders were analyzed in-situ by HT-XRD. The phenomena crystallization occurred in films and powders were analyzed. The activation energies of diffusion of oxygen vacancies of HfO2-14 mole% CaO and HfO2-20 mole% CaO films were measured from the thermal evolution of the relaxation constant measured by Perturbed Angular Correlation Technique.

  10. Anisotropic Heisenberg model in thin film geometry

    Energy Technology Data Exchange (ETDEWEB)

    Akıncı, Ümit

    2014-01-01

    The effect of the anisotropy in the exchange interaction on the phase diagrams and magnetization behavior of the Heisenberg thin film has been investigated with effective field formulation in a two spin cluster using the decoupling approximation. Phase diagrams and magnetization behaviors have been obtained for several different cases, by grouping the systems in accordance with, whether the surfaces/interior of the film has anisotropic exchange interaction or not. - Highlights: • Phase diagrams of the anisotropic Heisenberg model on the thin film obtained • Dependence of the critical properties on the film thickness obtained • Effect of the anisotropy on the magnetic properties obtained.

  11. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  12. Ferromagnetic properties of fcc Gd thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bertelli, T. P., E-mail: tambauh@gmail.com; Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y. [Universidade Federal do Espírito Santo, Departamento de Física, Vitória/ES 29075-910 (Brazil); Pessoa, M. S. [Universidade Federal do Espírito Santo, Departamento de Ciências Naturais, São Mateus/ES 29932-540 (Brazil)

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  13. Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

    Science.gov (United States)

    Olsen, T.; Schröder, U.; Müller, S.; Krause, A.; Martin, D.; Singh, A.; Müller, J.; Geidel, M.; Mikolajick, T.

    2012-08-01

    Thin film capacitors were fabricated by sputtering TiN-Y doped HfO2-TiN stacks on silicon substrates. Yttrium was incorporated into the HfO2 layers by simultaneously sputtering from Y2O3 and HfO2 sources. Electric polarization and relative permittivity measurements yield distinct ferroelectric properties as a result of low yttrium dopant concentrations in the range of 0.9-1.9 mol. %. Grazing incidence x-ray diffraction measurements show the formation of an orthorhombic phase in this range. Compared to atomic layer deposition films, the highest remanent polarization and the highest relative permittivity were obtained at significantly lower doping concentrations in these sputtered films.

  14. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    OpenAIRE

    Takao Shimizu; Kiliha Katayama; Takanori Kiguchi; Akihiro Akama; Konno, Toyohiko J.; Osami Sakata; Hiroshi Funakubo

    2016-01-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16...

  15. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  16. Manganese ferrite thin films Part II: Properties

    NARCIS (Netherlands)

    Hulscher, W.S.

    1972-01-01

    Some properties of evaporated manganese ferrite thin films are investigated, e.g. resistivity, magnetization reversal, Curie temperature, Faraday rotation and optical absorption. The properties are partly related to the partial oxygen pressure present during a preceding annealing process.

  17. Thin Film Photovoltaics: Markets and Industry

    National Research Council Canada - National Science Library

    Jäger-Waldau, Arnulf

    2012-01-01

    ...% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for solar modules...

  18. Highly stretchable wrinkled gold thin film wires

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  19. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  20. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  1. Studies in thin film flows

    CERN Document Server

    McKinley, I S

    2000-01-01

    the general case of non-zero capillary number numerically. Using the lubrication approximation to the Navier-Stokes equations we investigate the evolution and stability of a thin film of incompressible Newtonian fluid on a planar substrate subjected to a jet of air blowing normally to the substrate. For the simple model of the air jet we adopt, the initially axisymmetric problems we study are identical to those of a drop spreading on a turntable rotating at constant angular velocity (the simplest model for spin coating). We consider both drops without a dry patch (referred to as 'non-annular') and drops with a dry patch at their centre (referred to as 'annular'). First, both symmetric two-dimensional and axisymmetric three-dimensional drops are considered in the quasi-static limit of small capillary number. The evolution of both non-annular and annular drops and the stability of equilibrium solutions to small perturbations with zero wavenumber are determined. Using a specially developed finite-difference code...

  2. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  3. Printable CIGS thin film solar cells

    Science.gov (United States)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  4. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  5. Photophysical properties of Alq3 thin films

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.

    2013-11-01

    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  6. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  7. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  8. A thin-film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, Kees J.M.; Wieberdink, Johan W.; Fluitman, Jan H.J; Popma, Theo J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  9. Adhesion and friction of thin metal films

    Science.gov (United States)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  10. Influences of Annealing on Residual Stress and Structure of HfO2 Films

    Institute of Scientific and Technical Information of China (English)

    SHEN Yan-Ming; SHAO Shu-Ying; DENG Zhen-Xia; HE Hong-Bo; SHAO Jian-Da; FAN Zheng-Xiu

    2007-01-01

    HfO2 films are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100℃ and 400℃ on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.

  11. Flexible Thin Metal Film Thermal Sensing System

    Science.gov (United States)

    Thomsen, Donald Laurence (Inventor)

    2012-01-01

    A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

  12. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.

    Science.gov (United States)

    Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo; Chung, Dong Seob; Na, Hyunyeong; Nam, Honggi; Kim, Hyun; Perello, David J; Jeong, Hye Yun; Ly, Thuc Hue; Lee, Young Hee

    2016-01-26

    Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster.

  13. 氢氟酸腐蚀对α-Fe2O3薄膜光解水电极光电化学性质的影响%Effect of HF Treatment on the Photoelectrochemical Properties of a Hematite Thin Film Photoanode for Water Splitting

    Institute of Scientific and Technical Information of China (English)

    胡玉祥; 姜春香; 方亮; 郑分刚; 董雯; 苏晓东; 沈明荣

    2014-01-01

    The effects of HF treatment on the photoelectrochemical (PEC) properties of sol-gel prepared hematite (α-Fe2O3) thin films were investigated. Pores and interstices between the grains developed on the film surface as the HF etching time increased. The photocurrent density of theα-Fe2O3 photoanode decreased within the first 5 min of etching, and then increased quickly as the etching time increased. At longer time than 15 min the photocurrent density deteriorated. Re-annealing the etched samples significantly enhanced the photocurrent density. Based on electrochemical impedance spectroscopy, Raman and X-ray photoelectron spectroscopies, we propose that two factors contribute to photocurrent density reversely: the porosity and the lowered crystal inity of theα-Fe2O3 surface because of HF treatment. A schematic model was compiled to explain the enhanced PEC activities of the etched plus re-annealedα-Fe2O3 photoanode. The PEC and water splitting measurements showed that the etched plus re-annealed photoanode is more stable than the as-prepared one.%使用溶胶-凝胶法制备了α-Fe2O3薄膜,研究了氢氟酸腐蚀薄膜表面对其光电化学性质的影响。实验发现,薄膜表面的孔洞和间隙随着氢氟酸浸蚀时间的增长而发生变化。氢氟酸浸蚀5 min,α-Fe2O3电极的光电流降低;随后随浸蚀时间增加而迅速增加;当浸蚀时间大于15 min时,其光电流再次下降,但对浸蚀过的样品再次退火可以使光电流大幅增加。通过电化学交流阻抗谱、拉曼和X射线光电子能谱分析,提出了两个影响光电流的因素:氢氟酸表面浸蚀造成薄膜表面的多孔性和结晶度降低。为此,通过示意图解释了结合浸蚀和退火后处理两个步骤来增强α-Fe2O3薄膜光解水电极光电活性的原理。相对于初始的α-Fe2O3电极,浸蚀并且再退火处理后,其光电性质更加稳定。

  14. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  15. NLO properties of functionalized DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Oksana [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)], E-mail: okrupka@mail.ru; El-ghayoury, Abdelkrim [University d' Angers, UFR Sciences, Laboratoire CIMMA UMR CNRS 6200, 2 Bd. Lavoisier, 49045 (France); Rau, Ileana; Sahraoui, Bouchta [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France); Grote, James G. [Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, 3005 Hobson Way, Dayton, OH 45433-7707 (United States); Kajzar, Francois [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)

    2008-10-31

    In this paper we investigate the third-order nonlinear optical properties of spin deposited thin films of DNA-based complexes using the optical third harmonic generation (THG) technique at a fundamental wavelength of 1064 nm. We found that the third-order susceptibility, {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}), of DNA-based films was about one order of magnitude larger than that of our reference, a pure silica slab. In thin films doped with 5% of the chromophore disperse red 1 (DR1), a two order of magnitude larger value of {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}) was observed.

  16. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  17. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  18. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  19. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  20. Tungsten-doped thin film materials

    Science.gov (United States)

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  1. MOF thin films: existing and future applications.

    Science.gov (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  2. Study of artificial lattice Hf/Ni multilayer film using slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Nakajyo, Terunobu; Tashiro, Mutsumi; Asahino, Takashi; Murashige, Yusuke; Kanazawa, Ikuzo [Tokyo Gakugei Univ., Koganei (Japan); Jo, Yoshitaka; Yamamoto, Ryoichi; Ito, Yasuo

    1995-12-01

    The controlled metal multilayer film has been studied by slow positron beam and TDPAC. Hf monolayer film and Hf/Ni multilayer film were prepared. When a positron injects the sample, it is radically thermolized through the inelastic scattering. If the distribution of positron under the above conditions is represented by the depth function, it is expected usually by Makhov function. But Ghosh and Aers have investigated the implantation profile P(z,E) using Monte Carlo simulation and recently they study various kinds of monolayer and multilayer film by use of the implantation profile in the consideration of the scattering effects of positron in the interface of films. Two methods, the usual and the new method, were compared with each other in this paper. In the case of Hf 500 nm and Ni 1000 nm, the theoretical and the experimental values were agreed. On multilayer film, both values were agreed using new P(z,E) in consideration of scattering effect, but not agreed by usual P(z,E) and new P(z,E) neglected the scattering effect. To analyze the multilayer film, the scattering effect has to be considered and, moreover, the effect of nonthermalized positron is necessary to take into account near surface. (M.N.)

  3. Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    Fan Ji-Bin; Liu Hong-Xia; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2013-01-01

    A comparative study of two kinds of oxidants (H2O and O3) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlOx) films is carried out.The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied.The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled,which has significant effects on the dielectric constant,valence band,electrical properties,and stability of HfAlOx film.Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated.

  4. Sprayed lanthanum doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouznit, Y., E-mail: Bouznit80@gmail.com [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Beggah, Y. [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Ynineb, F. [Laboratory of Thin Films and Interface, University Mentouri, Constantine 25000 (Algeria)

    2012-01-15

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  5. Sprayed lanthanum doped zinc oxide thin films

    Science.gov (United States)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  6. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  7. Magnetowetting of Ferrofluidic Thin Liquid Films

    Science.gov (United States)

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; Dasgupta, Sunando

    2017-03-01

    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields.

  8. Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

    Science.gov (United States)

    Zhou, Dayu; Müller, J.; Xu, Jin; Knebel, S.; Bräuhaus, D.; Schröder, U.

    2012-02-01

    Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms.

  9. Optical Constants of Cadmium Telluride Thin Film

    Science.gov (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.

    2008-04-01

    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 m.bar on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  10. Pulsed laser deposition of ferroelectric thin films

    Science.gov (United States)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  11. Photoluminescence Study of Copper Selenide Thin Films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.

    2011-10-01

    Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350 nm are deposited on glass substrate at a temperature of 498 K±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X-ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max-3 Spectrofluorometer.

  12. Thin film calorimetry of polymer films

    Science.gov (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William

    2000-03-01

    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  13. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  14. Crystallization of zirconia based thin films.

    Science.gov (United States)

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C.

  15. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    Institute of Scientific and Technical Information of China (English)

    YU Ai-Fang; QI Qiong; JIANG Peng; JIANG Chao

    2009-01-01

    Carrier mobifity enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobifity of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.

  16. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  17. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  18. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  19. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  20. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  1. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  2. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  3. Magnetically actuated peel test for thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ostrowicki, G.T.; Sitaraman, S.K., E-mail: suresh.sitaraman@me.gatech.edu

    2012-03-30

    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m{sup 2} for 1.5-1.7 {mu}m electroplated copper on natively oxidized silicon substrates. - Highlights: Black-Right-Pointing-Pointer Non-contact magnetic actuation test for interfacial fracture characterization. Black-Right-Pointing-Pointer Applied load is determined through voltage applied to the driving electromagnet. Black-Right-Pointing-Pointer Displacement and delamination propagation is measured using an optical profiler. Black-Right-Pointing-Pointer Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. Black-Right-Pointing-Pointer The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m{sup 2}.

  4. Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell

    Institute of Scientific and Technical Information of China (English)

    赵占霞; 崔容强; 孟凡英; 于化丛; 周之斌

    2004-01-01

    This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si ∶ H/p-type c-Si heterojunction solar cell, which has open circuit voltage (Uoc) of 558 mV and short circuit current intensity (Isc) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the Uoc, Isc, and FF can keep stable for 10 h.

  5. Capillary instabilities in thin films. I. Energetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    A stability theory is presented which describes the conditions under which thin films rupture. It is found that holes in the film will either grow or shrink, depending on whether their initial radius is larger or smaller than a critical value. If the holes grow large enough, they impinge to form islands; the size of which are determined by the surface energies. The formation of grooves where the grain boundary meets the free surface is a potential source of holes which can lead to film rupture. Equilibrium grain boundary groove depths are calculated for finite grain sizes. Comparison of groove depth and film thickness yields microstructural conditions for film rupture. In addition, pits which form at grain boundary vertices, where three grains meet, are another source of film instability.

  6. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  7. Magnetite thin films: A simulational approach

    Energy Technology Data Exchange (ETDEWEB)

    Mazo-Zuluaga, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)]. E-mail: jomazo@fisica.udea.edu.co; Restrepo, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)

    2006-10-01

    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent {nu}=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed.

  8. Thin Film Electrodes for Rare Event Detectors

    Science.gov (United States)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  9. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  10. Micro-sensor thin-film anemometer

    Science.gov (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  11. Optimisation of superconducting thin films by TEM

    NARCIS (Netherlands)

    Bals, S.; van Tendeloo, G.; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Leca, V.; Salluzzo, M.

    2002-01-01

    High-resolution electron microscopy is used to study the initial growth of different REBa2Cu3O7−δ thin films. In DyBa2Cu3O7−δ ultra-thin films, deposited on TiO2 terminated SrTiO3, two different types of interface arrangements occur: bulk–SrO–TiO2–BaO–CuO–BaO–CuO2–Dy–CuO2–BaO–bulk and bulk–SrO–TiO2–

  12. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  13. Emittance Theory for Thin Film Selective Emitter

    Science.gov (United States)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  14. Environmentally stable sputter-deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, D.J.

    1978-03-01

    Accelerated corrosion data are presented for the titanium-silver and chrome-gold thin film metallization systems presently used at Sandia Laboratories. Improvements in corrosion, hence reliability, as a result of interposing a thin intermediate layer of either platinum or palladium are shown. Potentiometric measurements showing the alteration of corrosion potential with the use of palladium for the titanium-silver system are also presented.

  15. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    Dawei Zhang(张大伟); Shuhai Fan(范树海); Weidong Gao(高卫东); Hongbo He(贺洪波); Yingjian Wang(王英剑); Jianda Shao(邵建达); Zhengxiu Fan(范正修); Haojie Sun(孙浩杰)

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  16. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: mpfg@ua.pt [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2015-06-30

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  17. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  18. Transport properties of nanoperforated Nb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Trezza, M., E-mail: trezza@sa.infn.i [Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica ' E. R. Caianiello' , Universita degli Studi di Salerno, Baronissi I-84081 (Italy); Cirillo, C. [Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica ' E. R. Caianiello' , Universita degli Studi di Salerno, Baronissi (Saudi Arabia) I-84081 (Italy); Prischepa, S.L. [State University of Informatics and RadioElectronics, P. Brovka Street 6, Minsk 220013 (Belarus); Attanasio, C. [Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica ' E. R. Caianiello' , Universita degli Studi di Salerno, Baronissi I-84081 (Italy)

    2010-10-01

    Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering, inherited from the Si substrates their structure, made of holes of 10 nm diameter and of 20 and 40 nm spacing, which provide an artificial pinning lattice. Commensurability effects between the Abrikosov vortex lattice and the artificial array of holes were investigated by transport measurements.

  19. Silver buffer layers for YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Tel Aviv Univ. (Israel). Center for Technol. Education Holon

    1999-09-01

    A simple economical conventional vacuum system was used for evaporation of YBCO thin films on as-deposited unbuffered Ag layers on MgO substrates. The subsequent heat treatment was carried out in low oxygen partial pressure at a relative low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using dc four probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). (orig.)

  20. Perovskite thin films via atomic layer deposition.

    Science.gov (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  1. Nanoscale electrochemistry using dielectric thin films as solid electrolytes.

    Science.gov (United States)

    Valov, Ilia; Lu, Wei D

    2016-08-01

    It is now well known that at the nanoscale matters behave differently compared to bulk phases. Increased reactivity, deviations in structural, thermodynamic and kinetic properties make nanoscale materials and processes attractive for both fundamental research and applications. Here we show that nanometer thin films of materials with dielectric properties at the macroscopic level such as SiO2, Ta2O5 and HfO2 behave as solid electrolytes and exhibit evident ionic transport and electrochemical redox reactions. Experimental studies demonstrate that classical electrochemical potentiodynamic and steady state methods can be used to study the mass and charge transport at the nanoscale. We believe these reported properties of nanomatter open new opportunities for fundamental research and applications.

  2. YBCO thin films in ac and dc films

    CERN Document Server

    Shahzada, S

    2001-01-01

    We report studies on the dc magnetization of YBCO thin films in simultaneously applied dc and ac fields. The effect of the ac fields is to decrease the irreversible magnetization drastically leading to complete collapse of the hysteresis loops for relatively small ac fields (250e). The magnitude of the decrease depends on the component of the ac field parallel to the c-axis. The decrease is non-linear with ac amplitude and is explained in the framework of the critical state response of ultra thin films in perpendicular geometry. The ac fields increase the relaxation rapidly at short times while the long time response appears unaffected. (author)

  3. Workshop on thin film thermal conductivity measurements

    Science.gov (United States)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.

    1998-04-01

    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  4. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Study of iron mononitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil, E-mail: mgupta@csr.res.in; Gupta, Mukul, E-mail: mgupta@csr.res.in; Phase, D. M., E-mail: mgupta@csr.res.in; Reddy, V. R., E-mail: mgupta@csr.res.in; Gupta, Ajay, E-mail: mgupta@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore,-452001 (India)

    2014-04-24

    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  6. Epitaxy of layered semiconductor thin films

    Science.gov (United States)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  7. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  8. Thin films for micro solid oxide fuel cells

    Science.gov (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  9. Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

    Directory of Open Access Journals (Sweden)

    H. X. Zhu

    2016-05-01

    Full Text Available A nano-floating gate memory structure based on Ni nanocrystals (NCs embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

  10. Ternary compound thin film solar cells

    Science.gov (United States)

    Kazmerski, L. L.

    1975-01-01

    A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

  11. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  12. Correlated dewetting patterns in thin polystyrene films

    Energy Technology Data Exchange (ETDEWEB)

    Neto, Chiara [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Jacobs, Karin [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Seemann, Ralf [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Blossey, Ralf [Centre for Bioinformatics, Saarland University, PO Box 151150, D-66041 Saarbruecken (Germany); Becker, Juergen [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany); Gruen, Guenther [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany)

    2003-01-15

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  13. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  14. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  15. Electrostatic Discharge Effects in Thin Film Transistors

    NARCIS (Netherlands)

    Golo, Natasa

    2002-01-01

    Although amorphous silicon thin film transistors (α-Si:H TFT’s) have a very low electron mobility and pronounced instabilities of their electrical characteristics, they are still very useful and they have found their place in the semiconductors industry, as they possess some very good properties: th

  16. Thin-Film Solid Oxide Fuel Cells

    Science.gov (United States)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  17. Welding Wires To Thin Thermocouple Films

    Science.gov (United States)

    Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary

    1993-01-01

    Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

  18. Intelligent Processing of Ferroelectric Thin Films

    Science.gov (United States)

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  19. Recent progress in thin film organic photodiodes

    NARCIS (Netherlands)

    Inganäs, Olle; Roman, Lucimara S.; Zhang, Fengling; Johansson, D.M.; Andersson, M.R.; Hummelen, J.C.

    2001-01-01

    We review current developments in organic photodiodes, with special reference to multilayer thin film optics, and modeling of organic donor-acceptor photodiodes. We indicate possibilities to enhance light absorption in devices by nanopatterning as well as by blending, and also discuss materials

  20. Recent progress in thin film organic photodiodes

    NARCIS (Netherlands)

    Inganäs, Olle; Roman, Lucimara S.; Zhang, Fengling; Johansson, D.M.; Andersson, M.R.; Hummelen, J.C.

    2001-01-01

    We review current developments in organic photodiodes, with special reference to multilayer thin film optics, and modeling of organic donor-acceptor photodiodes. We indicate possibilities to enhance light absorption in devices by nanopatterning as well as by blending, and also discuss materials scie

  1. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and prem

  2. Polarization Fatigue in Ferroelectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    王忆; K.H.WONG; 吴文彬

    2002-01-01

    The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

  3. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic inst

  4. Rechargeable Thin-film Lithium Batteries

    Science.gov (United States)

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  5. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager;

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  6. Flexible thin-film NFC tags

    NARCIS (Netherlands)

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance char

  7. Bauschinger effect in unpassivated freestanding thin films

    NARCIS (Netherlands)

    Shishvan, S.S.; Nicola, L.; Van der Giessen, E.

    2010-01-01

    Two-dimensional (2D) discrete dislocation plasticity simulations are carried out to investigate the Bauschinger effect (BE) in freestanding thin films. The BE in plastic flow of polycrystalline materials is generally understood to be caused by inhomogeneous deformation during loading, leading to res

  8. Quasifree Mg–H thin films

    NARCIS (Netherlands)

    Baldi, A.; Palmisano, V.; Gonzalez-Silveira, M.; Pivak, Y.; Slaman, M.; Schreuders, H.; Dam, B.; Griessen, R.

    2009-01-01

    The thermodynamics of hydrogen absorption in Pd-capped Mg films are strongly dependent on the magnesium thickness. In the present work, we suppress such dependency by inserting a thin Ti layer between Mg and Pd. By means of optical measurements, we show that the surface energy contribution to the de

  9. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  10. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  11. Resistance contact thin-film resistor

    Directory of Open Access Journals (Sweden)

    Spirin V. G.

    2008-10-01

    Full Text Available The analytical model of the calculation of the contact resistance of the thin-film resistor is Offered. The Explored dependency of the contact resistance from wedge of the pickling. The Considered influence adhesive layer on warm-up stability of the resistor. They Are Received formulas of the calculation systematic and casual inaccuracy contributed by contact resistance.

  12. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  13. Surface roughness evolution of nanocomposite thin films

    NARCIS (Netherlands)

    Turkin, A; Pei, Y.T.; Shaha, K.P.; Chen, C.Q.; Vainchtein, David; Hosson, J.Th.M. De

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growin

  14. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  15. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  16. Monte Carlo simulation of magnetic nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Guan Zhi-Qiang; Yutaka Abe; Jiang Dong-Hua; Lin Hai; Yoshitake Yamazakia; Wu Chen-Xu

    2004-01-01

    @@ Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

  17. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  18. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  19. Nonlocal thin films in calculations of the Casimir force

    NARCIS (Netherlands)

    Esquivel-Sirvent, R.; Svetovoy, V.B.

    2005-01-01

    The Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than th

  20. Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.

    Science.gov (United States)

    Itoh, Takeki; Kobayashi, Atsushi; Ueno, Kohei; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-07-07

    We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.

  1. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    the increase in ionized impurity scattering.       Figure 1.48: Resistivity versus %Ga [125]  ZnO:Ga films were also  deposited  by  spray   pyrolysis ...Ilican  [137]  deposited   In‐doped  ZnO  thin  films  onto  glass  substrates  by  the  spray   pyrolysis   method at 350 oC substrate temperature. The...structure  of  ZnO  presented  the  following  findings:     The Polycrystalline ZnO  thin  films were  deposited  on a glass  substrate by a  spray

  2. MISSE 5 Thin Films Space Exposure Experiment

    Science.gov (United States)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  3. Effects of Modified Precursor Solution on Microstructure of (Y,Yb)MnO3/HfO2/Si

    Science.gov (United States)

    Suzuki, Kazuyuki; Kato, Kazumi

    2007-10-01

    Ferroelectric/insulator/silicon structures were prepared using (Y,Yb)MnO3 films as ferroelectrics and HfO2 thin films as insulators through alkoxy-derived precursor solutions. The HfO2 solution was chemically modified in order to decrease the number of heating cycles required. The HfO2 films prepared using a partially hydrolyzed alkoxide solution had a uniform structure. From the results of measurements of the roughness level and refractive index of the HfO2 films, the partial hydrolysis of the HfO2 solution was found to be effective for the formation of a uniform microstructure in a thin insulator film. (Y,Yb)MnO3/HfO2/Si structures were constructed using the resultant HfO2 thin films prepared using the modified solutions.

  4. Thermally tailored gradient topography surface on elastomeric thin films.

    Science.gov (United States)

    Roy, Sudeshna; Bhandaru, Nandini; Das, Ritopa; Harikrishnan, G; Mukherjee, Rabibrata

    2014-05-14

    We report a simple method for creating a nanopatterned surface with continuous variation in feature height on an elastomeric thin film. The technique is based on imprinting the surface of a film of thermo-curable elastomer (Sylgard 184), which has continuous variation in cross-linking density introduced by means of differential heating. This results in variation of viscoelasticity across the length of the surface and the film exhibits differential partial relaxation after imprinting with a flexible stamp and subjecting it to an externally applied stress for a transient duration. An intrinsic perfect negative replica of the stamp pattern is initially created over the entire film surface as long as the external force remains active. After the external force is withdrawn, there is partial relaxation of the applied stresses, which is manifested as reduction in amplitude of the imprinted features. Due to the spatial viscoelasticity gradient, the extent of stress relaxation induced feature height reduction varies across the length of the film (L), resulting in a surface with a gradient topography with progressively varying feature heights (hF). The steepness of the gradient can be controlled by varying the temperature gradient as well as the duration of precuring of the film prior to imprinting. The method has also been utilized for fabricating wettability gradient surfaces using a high aspect ratio biomimetic stamp. The use of a flexible stamp allows the technique to be extended for creating a gradient topography on nonplanar surfaces as well. We also show that the gradient surfaces with regular structures can be used in combinatorial studies related to pattern directed dewetting.

  5. Thin blend films of cellulose and polyacrylonitrile

    Science.gov (United States)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  6. Thin-film semiconductor rectifier has improved properties

    Science.gov (United States)

    1966-01-01

    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  7. Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application

    Science.gov (United States)

    Firek, Piotr; Wysokiński, Piotr

    2016-12-01

    Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O2/N2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (Ra=0.2÷1,0 nm). Thickness of HfOXNY films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage UFB, dielectric constant Ki, interface state trap density Dit and effective charge Qeff. Subsequently, deposited HfOxNy layers were annealed in PDA process (40 min 400 °C 100% N2) after which the electrical characterization was performed again.

  8. Thin Film Electrochemical Power Cells

    Science.gov (United States)

    1991-01-01

    Anion Intercalating Polymer Cathode", proceedings of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. K. Naoi, W.H...of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. M. Lien and W.H. Smyrl, "An Impedance Study of Polyvinylferrocene...Films", in Transient Techniques in Corrosion Science and Engineering, eds. W.H. Smyrl, et al., Electrochemical Society , 1989. K, Naoi, M.M. Lien and

  9. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  10. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  11. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  12. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  13. Thermal annealing and magnetic anisotropy of NiFe thin films on n{sup +}-Si for spintronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Q.H. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People’s Republic of China (China); Gansu Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Science, Lanzhou 730000 (China); Huang, R. [Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People’s Republic of China (China); Wang, L.S. [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Wu, Z.G., E-mail: zgwu@lzu.edu.cn [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Li, C., E-mail: lich@xmu.edu.cn [Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People’s Republic of China (China); Luo, Q. [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Zuo, S.Y. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Li, J. [Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, People’s Republic of China (China); Peng, D.L. [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Han, G.L. [Gansu Key Laboratory of Sensor and Sensor Technology, Institute of Sensor Technology, Gansu Academy of Science, Lanzhou 730000 (China); Yan, P.X. [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)

    2015-11-15

    To ensure that the magnetic metal electrodes can meet the requirements of the spin injection, NiFe films prepared both on HfO{sub 2} dielectric layer and n{sup +}-Si directly by sputtering deposition, and treated by conventional furnace annealing and/or high vacuum magnetic field annealing were investigated. It was found that thermal annealing at 250 °C improved the crystalline quality and reduced surface roughness of the NiFe films, thus enhancing its saturation magnetization intensity. The 100 nm thick NiFe films had too large coercive force and saturation magnetization intensity in vertical direction to meet the requirements of Hanle curve detection. While, 30 nm thick NiFe films showed paramagnetic hysteresis loops in vertical direction, and the magnetization intensity of the sample after annealing at 250 °C for 30 min was less than 2% to the parallel when the external magnetic field was given between ±10 Oe. This was preferred to Hanle curve detection. The thin HfO{sub 2} dielectric layer between metal and Si partially suppressed the diffusion of Ni in NiFe into Si substrate and formation of NiSi, greatly enhancing the saturation magnetization intensity of the Al/NiFe/HfO{sub 2}/Si sample by thermal annealing. Those results suggest that Al/NiFe/HfO{sub 2}/Si structure, from the point view of magnetic electrodes, would be suitable for spin injection and detection applications. - Highlights: • The saturation magnetization intensity of NiFe thin-film was enhanced by thermal annealing. • A paramagnetic hysteresis loop of NiFe thin-film was observed in vertical direction. • The thin HfO{sub 2} dielectric layer between NiFe and Si partially suppressed the diffusion of Ni into Si.

  14. Damping and ferromagnetic resonance linewidth broadening in nanocrystalline soft ferromagnetic Fe-Co-Hf-N films

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material-forschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)], E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material-forschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Kovacs, A. [Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka 5670047 (Japan)

    2008-07-15

    In order to describe high-frequency damping mechanisms of ferromagnetic films by means of the imaginary part of the frequency-dependant permeability, CMOS compatible ferromagnetic Fe{sub 36}Co{sub 44}Hf{sub 9}N{sub 11} films were deposited by reactive r.f. magnetron sputtering on oxidised 5x5 mm{sup 2}x380 {mu}m (1 0 0)-silicon substrates with a 6-in. Fe{sub 38}Co{sub 47}Hf{sub 15} target, as well as magnetic field annealing between 300 and 600 deg. C. An in-plane uniaxial anisotropy of around 4.5 mT as well as an excellent soft magnetic behaviour with a saturation polarisation of approximately 1.4 T could be observed after heat treatment at the above-mentioned temperatures, which drives these films to a high-frequency suitability. Ferromagnetic resonance frequencies of approximately up to 2.4 GHz could be obtained. The frequency-dependant permeability was measured with a broadband permeameter. Depending on the heat treatment, an increase of the full-width at half-maximum (FWHM) of the imaginary part of the frequency-dependant permeability is discussed in terms of two-magnon scattering, anisotropy-type competition and local resonance generation through predominant grain growth causing magnetisation and anisotropy inhomogeneities in the magnetic films. The grain size of the films was determined by (HRTEM) imaging and amounts from a few nanometres for films heat treated at 300 deg. C to more than 10 nm at 600 deg. C where the FWHM {delta}f{sub eff} and the Landau-Lifschitz-Gilbert equation damping parameter {alpha}{sub eff} increases with d{sub nm}{sup 2} and d{sub nm} (e.g. d{sub nm} is the grain diameter of the nonmagnetic Hf-N phase), respectively.

  15. When are thin films of metals metallic?

    Science.gov (United States)

    Plummer, E. W.; Dowben, P. A.

    1993-04-01

    There is an increasing body of experimental information suggesting that very thin films of materials, normally considered to be metals, exhibit behavior characteristic of a nonmetal. In almost all cases, there is a nonmetal-to-metal transition as a function of film density or thickness, frequently accompanied by a structural transition. Amazingly, this behavior seems to occur for metal films on metal substrates, as well as for metals on semiconductors. The identification of this phenomena and the subsequent explanation has been slow in developing, due to the inability to directly measure the conductivity of a submonolayer film. This paper will discuss the evidence accumulated from variety of spectroscopic experimental techniques for three systems: a Mott-Hubbard transition, a Peierls-like distortion, and a Wilson transition.

  16. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  17. Cathodoluminescence degradation of PLD thin films

    Science.gov (United States)

    Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Nsimama, P. D.; Dejene, F. B.; Dolo, J. J.

    2010-12-01

    The cathodoluminescence (CL) intensities of Y2SiO5:Ce3+, Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10-6 Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y2SiO5:Ce3+ a luminescent SiO2 layer formed during the electron bombardment. Gd2O3 and SrO thin films formed on the surfaces of Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+, respectively, due to ESSCRs.

  18. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu

    2005-01-01

    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  19. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  20. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  1. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  2. Electrochromism in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  3. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  4. Magnetic Thin Films of Inorganic Nanosheets

    Science.gov (United States)

    Yamamoto, Takashi; Namba, Hiroaki; Einaga, Yasuaki

    2012-02-01

    Molecule-based magnets have been fascinating materials because of the potential applications in information storage, electronic and spintronic devices. However, such applications would require arraying the active materials on a substrate or interfacing with other components. Here, we focus on fabricating multi-functional magnetic films using inorganic nanosheets as a building block. The thin films could be prepared by the modified Langmuir-Blodgett, LB, technique or the layer-by-layer, LbL, method, which are representative wet-processings for film preparation. As the magnetic LB film, we chose semiconductive titania nanosheets and magnetic Prussian Blue. Upon band gap excitation of titania nanosheets, electron injection into Prussian Blue was achieved with scavenging interlayer water molecules, leading to photoreduction to Prussian White. As the magnetic LbL film, we chose magnetic layered double hydroxide, LDH, nanosheets and non-magnetic smectite nanosheets. In powdered LDH, a coercivity increased with expanding the interlayer spacing. On the other hand, despite the larger interlayer spacing for the LbL film, a coercivity was less than that of the comparative powdered LDH. It is indicated LDH nanosheets are integrated in an anisotropic manner in the LbL films.

  5. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...... is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally...

  6. INVESTIGATION OF PHOTOELECTROCHROMIC THIN FILM AND DEVICE

    Institute of Scientific and Technical Information of China (English)

    M.J. Chen; H. Shen

    2005-01-01

    Photoelectrochromic device is a combination of dye-sensitized solar cells and electrochromic WO3 layers. Ectrochroelmic WO3 layer and TiO2 layer had been prepared by the sol-gel process, then be assembled to pohotoelectrochromic device. The effects of heating temperature on photoelectrochromic were investigated. The results showed that thin films prepared by dip-coating and spin-coating had good film quality and the device made by the method mentioned in the paper had good photoelectrochromie properties.

  7. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO{sub x} films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, X.Y.; Zhang, S.Y.; Zhang, T.; Wang, R.X.; Li, L.T.; Zhang, Y. [Southwest University, School of Physical Science and Technology, Chongqing (China); Dai, J.Y. [The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong (China)

    2016-09-15

    Amorphous Ge-doped HfO{sub x} films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfO{sub x} matrix and the existence of HfSiO{sub x} interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfO{sub x}/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 x 10{sup 4} cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfO{sub x} film. (orig.)

  8. Electrostatic Discharge Effects on Thin Film Resistors

    Science.gov (United States)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  9. Multiferroic oxide thin films and heterostructures

    Science.gov (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  10. Multiferroic oxide thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Chengliang, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Hu, Weijin; Wu, Tom, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tian, Yufeng [School of Physics, Shandong University, Jinan 250100 (China)

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  11. Triboelectric Nanogenerator Using Lithium Niobate Thin Film

    Science.gov (United States)

    Geng, Juan; Zhang, Xinzheng; Kong, Yongfa; Xu, Jingjun

    2017-06-01

    We present a triboelectric nanogenerator (TENG) using a lithium niobate thin film, as one of the triboelectric pairs which was grown on a silicon substrate by laser molecule beam epitaxy (LMBE). The designed TENG has the advantages of simple structure, easy fabrication, small size (1.1*1.0*0.15 cm3). An open-circuit voltage of 136 V and a short-circuit current of 8.40 μA have been achieved. The maximum output power is 307.5μW under the load resistance of 10MΩ. This is the first time to use lithium niobate thin film as one of the friction pair, which may make it possible to expand the application of triboelectric nanogenerator to optical field.

  12. Thin Films of Polypyrrole on Particulate Aluminum

    Science.gov (United States)

    2009-02-01

    C H R I S T O P H E R V E T T E R , X I A O N I N G Q I , S U B R A M A N Y A M V . K A S I S O M A Y A J U L A , A N D Thin Films of Polypyrrole on...1. REPORT DATE FEB 2009 2. REPORT TYPE 3. DATES COVERED 00-00-2009 to 00-00-2009 4. TITLE AND SUBTITLE Thin Films of Polypyrrole on...layer 3 Why Polypyrrole /Flake? Polypyrrole  Poor mechanical properties  Poor adhesion  Solubility issues  Continuous layer needed 4 Polypyrrole Coated

  13. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. [ed.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  14. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. (ed.)

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  15. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  16. Silver nanowire composite thin films as transparent electrodes for Cu(In,Ga)Se₂/ZnS thin film solar cells.

    Science.gov (United States)

    Tan, Xiao-Hui; Chen, Yu; Liu, Ye-Xiang

    2014-05-20

    Solution processed silver nanowire indium-tin oxide nanoparticle (AgNW-ITONP) composite thin films were successfully applied as the transparent electrodes for Cu(In,Ga)Se₂ (CIGS) thin film solar cells with ZnS buffer layers. Properties of the AgNW-ITONP thin film and its effects on performance of CIGS/ZnS thin film solar cells were studied. Compared with the traditional sputtered ITO electrodes, the AgNW-ITONP thin films show comparable optical transmittance and electrical conductivity. Furthermore, the AgNW-ITONP thin film causes no physical damage to the adjacent surface layer and does not need high temperature annealing, which makes it very suitable to use as transparent conductive layers for heat or sputtering damage-sensitive optoelectronic devices. By using AgNW-ITONP electrodes, the required thickness of the ZnS buffer layers for CIGS thin film solar cells was greatly decreased.

  17. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6-{mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin-film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin-film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin-film lithium batteries.

  18. Incoherent and Laser Photodeposition on Thin Films.

    Science.gov (United States)

    1980-09-01

    mixing system. Both a carbon dioxide and dry chemical fire extinguisher were on hand in case a fire was initiated by the compounds. The dimethvlzinc was...summarizes three months of experimental effort devoted toward the production of thin films by the photodissociation of organometallic molecules containing the...that the threshold wavelength for the photodissociation of both Zn- 0 and Se- (CH3 )2 was approximately 2420A. Consequently, these laser photodeposition

  19. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  20. Surface morphology of thin films polyoxadiazoles

    OpenAIRE

    J. Weszka; M.M. Szindler; M. Chwastek-Ogierman; BRUMA M.; P. Jarka; Tomiczek, B.

    2011-01-01

    urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used....

  1. Additives to silane for thin film silicon photovoltaic devices

    Science.gov (United States)

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  2. Design and characterization of thin film microcoolers

    Science.gov (United States)

    LaBounty, Chris; Shakouri, Ali; Bowers, John E.

    2001-04-01

    Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20-30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.

  3. Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Moon, Tae-Hyoung; Ham, Moon-Ho; Myoung, Jae-Min

    2005-03-01

    We present the annealing effects on nanochemistry and electrical properties in HfO2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of HfO2 films in the temperature range of 600-800°C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700°C. This result supports that the accumulation capacitance of the sample annealed at 700°C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600°C.

  4. Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

    KAUST Repository

    Yang, Xiaoming

    2014-10-01

    This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

  5. Titanium diffusion in gold thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, William E. [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States); Gregori, Giuliano, E-mail: g.gregori@fkf.mpg.d [California NanoSystems Institute, University of California, Santa Barbara, CA 93106-5050 (United States); Mates, Thomas [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States)

    2010-03-01

    In the present study, diffusion phenomena in titanium/gold (Ti/Au) thin films occurring at temperatures ranging between 200 and 400 {sup o}C are investigated. The motivation is twofold: the first objective is to characterize Ti diffusion into Au layer as an effect of different heat-treatments. The second goal is to prove that the implementation of a thin titanium nitride (TiN) layer between Ti and Au can remarkably reduce Ti diffusion. It is observed that Ti atoms can fully diffuse through polycrystalline Au thin films (260 nm thick) already at temperatures as a low as 250 {sup o}C. Starting from secondary ion mass spectroscopy data, the overall diffusion activation energy {Delta}E = 0.66 eV and the corresponding pre-exponential factor D{sub 0} = 5 x 10{sup -11} cm{sup 2}/s are determined. As for the grain boundary diffusivity, both the activation energy range 0.54 < {Delta}E{sub gb} < 0.66 eV and the pre-exponential factor s{sub 0}D{sub gb0} = 1.14 x 10{sup -8} cm{sup 2}/s are obtained. Finally, it is observed that the insertion of a thin TiN layer (40 nm) between gold and titanium acts as an effective diffusion barrier up to 400 {sup o}C.

  6. Dynamic Characterization of Thin Film Magnetic Materials

    Science.gov (United States)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  7. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  8. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  9. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  10. Optical properties of thin polymer films

    Science.gov (United States)

    Kasarova, Stefka N.; Sultanova, Nina G.; Petrova, Tzveta; Dragostinova, Violeta; Nikolov, Ivan

    2009-10-01

    In this report three types of optical polymer thin films deposited on glass substrates are investigated. Transmission spectra of the polymer samples are obtained in the range from 400 nm to 1500 nm. A laser microrefractometer has been used to measure the refractive indices of the examined materials at 406, 656, 910 and 1320 nm. Dispersion properties of the polymer films are analyzed on the base of the Cauchy-Schott's and Sellmeier`s approximations. Dispersion coefficients are calculated and dispersion charts in the visible and near infrared spectral regions are presented and compared. Abbe numbers of mean and partial dispersion of the polymer films are obtained. Calculation of refractive indices at many laser emission wavelengths in the considered spectral range is accomplished.

  11. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  12. Optical characteristics of H{sub 2}O-based and O{sub 3}-based HfO{sub 2} films deposited by ALD using spectroscopy ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Xiaojiao; Liu, Hongxia; Zhong, Bo; Fei, Chenxi; Wang, Xing; Wang, Qianqiong [Xidian University, School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi' an (China)

    2015-06-15

    Optical properties of thin atomic layer-deposited HfO{sub 2} films grown by H{sub 2}O and O{sub 3} are analyzed by variable angle spectroscopic ellipsometry. By investigating the dielectric constant, it is found that a higher real part of the dielectric constant (ε {sub 1}) value is observed for H{sub 2}O-based film due to less silicate component in the film. Careful examination of the log scale of imaginary part of the dielectric constant (ε {sub 2}) leads to the conclusion that the absorption features in the energy range of 3.2-5.35 eV originate from the interface layer between the silicon substrate and the native oxide. In particular, O{sub 3}-based gate stacks have less sub-band gap defect states besides the silicon's critical features. Moreover, a larger high-frequency dielectric constant, direct and indirect band gap values are obtained for O{sub 3}-based film. Meanwhile, suitable valence band offsets (3.38 and 3.55 eV) and conduction band offsets (1.58 and 1.47 eV) are obtained for H{sub 2}O- and O{sub 3}-based HfO{sub 2} gate stacks, respectively, indicating both type of dielectric films can provide sufficient tunneling barriers for both electrons and holes. (orig.)

  13. Inorganic and Organic Solution-Processed Thin Film Devices

    Institute of Scientific and Technical Information of China (English)

    Morteza Eslamian

    2017-01-01

    Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging tech-nologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique prop-erties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

  14. A New Method of Fabricating NASICON Thin Film

    Institute of Scientific and Technical Information of China (English)

    WNGLing; SUNJialin; 等

    1998-01-01

    Nasicon thin films of 15 μm thick on YSZ sub-strates were prepared by means of solid state reaction at 1230℃ for 10 hours,Stuctural characteriza-tion of the films were performed by XRD ,SEM and EDX,A new tyype of CO2 gas sensor with Nasicon thin film as solid electrolyte was developed.

  15. Bismuth thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  16. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  17. Intrinsic instability of thin liquid films on nanostructured surfaces

    Science.gov (United States)

    Rokoni, Arif; Hu, Han; Sun, Liyong; Sun, Ying

    2016-11-01

    The instability of a thin liquid film on nanostructures is not well understood but is important in liquid-vapor two-phase heat transfer (e.g., thin film evaporation and boiling), lubrication, and nanomanufacturing. In thin film evaporation, the comparison between the non-evaporating film thickness and the critical film breakup thickness determines the stability of the film: the film becomes unstable when the critical film breakup thickness is larger than the non-evaporating film thickness. In this study, a closed-form model is developed to predict the critical breakup thickness of a thin liquid film on 2D periodic nanostructures based on minimization of system free energy in the limit of a liquid monolayer. Molecular dynamics simulations are performed for water thin films on square nanostructures of varying depth and wettability and the simulations agree with the model predictions. The results show that the critical film breakup thickness increases with the nanostructure depth and the surface wettability. The model developed here enables the prediction of the minimum film thickness for stable thin film evaporation on a given nanostructure.

  18. Cerium Dioxide Thin Films Using Spin Coating

    Directory of Open Access Journals (Sweden)

    D. Channei

    2013-01-01

    Full Text Available Cerium dioxide (CeO2 thin films with varying Ce concentrations (0.1 to 0.9 M, metal basis were deposited on soda-lime-silica glass substrates using spin coating. It was found that all films exhibited the cubic fluorite structure after annealing at 500°C for 5 h. The laser Raman microspectroscopy and GAXRD analyses revealed that increasing concentrations of Ce resulted in an increase in the degree of crystallinity. FIB and FESEM images confirmed the laser Raman and GAXRD analyses results owing to the predicted increase in film thickness with increasing Ce concentration. However, porosity and shrinkage (drying cracking of the films also increased significantly with increasing Ce concentrations. UV-VIS spectrophotometry data showed that the transmission of the films decreased with increasing Ce concentrations due to the increasing crack formation. Furthermore, a red shift was observed with increasing Ce concentrations, which resulted in a decrease in the optical indirect band gap.

  19. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces.

  20. Gadolinium thin films as benchmark for magneto-caloric thin films

    Science.gov (United States)

    Helmich, Lars; Bartke, Marianne; Teichert, Niclas; Schleicher, Benjamin; Fähler, Sebastian; Hütten, Andreas

    2017-05-01

    We report on the preparation of Gadolinium thin films by means of sputter deposition on Silicon Oxide wafers. A series of samples with different buffer layers and various substrate temperatures has been produced. The film on an amorphous Tantalum buffer deposited at 773 K shows the highest increase of magnetization during the phase transition at the Curie temperature. Further detailed analysis of the magnetic properties has been conducted by VSM.

  1. Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

    KAUST Repository

    García-Cerda, L. A.

    2010-03-01

    In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.

  2. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    张大伟; 范树海; 高卫东; 贺洪波; 王英剑; 邵建达; 范正修; 孙浩杰

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different depo sition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  3. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  4. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  5. Thin-liquid-film evaporation at contact line

    Institute of Scientific and Technical Information of China (English)

    Hao WANG; Zhenai PAN; Zhao CHEN

    2009-01-01

    When a liquid wets a solid wall, the extended meniscus near the contact line may be divided into three regions: a nonevaporating region, where the liquid is adsorbed on the wall; a transition region or thin-film region, where effects of long-range molecular forces (disjoining pressure) are felt; and an intrinsic meniscus region, where capillary forces dominate. The thin liquid film, with thickness from nanometers up to micrometers, covering the transition region and part of intrinsic meniscus, is gaining interest due to its high heat transfer rates. In this paper, a review was made of the researches on thin-liquid-film evaporation. The major characteristics of thin film, thin-film modeling based on continuum theory, simulations based on molecular dynamics, and thin-film profile and temperature measurements were summarized.

  6. The multilayer Fe/Hf studied with slow positron beam

    Science.gov (United States)

    Murashige, Y.; Tashiro, M.; Nakajyo, T.; Koizumi, T.; Kanazawa, I.; Komori, F.; Ito, Y.

    1997-04-01

    The positron annihilation parameter versus the incident positron energy is measured in the thin Fe films and the Fe/Hf bilayer on silica substrate, by means of the variable energetic slow-positron beam technique. We have analyzed the change in open-volume spaces and vacancy-type defects among the Fe microcrystals in these thin films with the deposition temperature.

  7. Pulsed laser deposition of pepsin thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kecskemeti, G. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary)]. E-mail: kega@physx.u-szeged.hu; Kresz, N. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary); Smausz, T. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Hopp, B. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Nogradi, A. [Department of Ophthalmology, University of Szeged, H-6720, Szeged, Koranyi fasor 10-11 (Hungary)

    2005-07-15

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ({lambda} = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm{sup 2}. The pressure in the PLD chamber was 2.7 x 10{sup -3} Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm{sup 2}. The protein digesting capacity of the transferred pepsin was tested by adapting a modified 'protein cube' method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  8. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    Science.gov (United States)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-09-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm2. Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm2. This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes.

  9. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  10. Stripe glasses in ferromagnetic thin films

    Science.gov (United States)

    Principi, Alessandro; Katsnelson, Mikhail I.

    2016-02-01

    Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the strong out-of-plane anisotropy, but its direction changes periodically, forming an alternating spin-up and spin-down stripe pattern. The latter is stabilized by the competition between the ferromagnetic coupling and dipole-dipole interactions, and disappears when a moderate in-plane magnetic field is applied. It has been suggested that such a behavior may be understood in terms of a self-induced stripe glassiness. In this paper we show that such a scenario is compatible with the experimental findings. The strong out-of-plane magnetic anisotropy of the film is found to be beneficial for the formation of both stripe-ordered and glassy phases. At zero magnetic field the system can form a glass only in a narrow interval of fairly large temperatures. An in-plane magnetic field, however, shifts the glass transition towards lower temperatures, therefore enabling it at or below room temperature. In good qualitative agreement with the experimental findings, we show that a moderate in-plane magnetic field of the order of 50 mT can lead to the formation of defects in the stripe pattern, which sets the onset of the glass transition.

  11. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  12. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures.

    Science.gov (United States)

    Ahnood, Arman; Zhou, H; Suzuki, Y; Sliz, R; Fabritius, T; Nathan, Arokia; Amaratunga, G A J

    2015-12-01

    Decoupling paths of carrier collection and illumination within photovoltaic devices is one promising approach for improving their efficiency by simultaneously increasing light absorption and carrier collection efficiency. Orthogonal photovoltaic devices are core-shell type structures consisting of thin film photovoltaic stack on vertical nanopillar scaffolds. These types of devices allow charge collection to take place in the radial direction, perpendicular to the path of light in the vertical direction. This approach addresses the inherently high recombination rate of disordered thin films, by allowing semiconductor films with minimal thicknesses to be used in photovoltaic devices, without performance degradation associated with incomplete light absorption. This work considers effects which influence the performance of orthogonal photovoltaic devices. Illumination non-uniformity as light travels across the depth of the pillars, electric field enhancement due to the nanoscale size and shape of the pillars, and series resistance due to the additional surface structure created through the use of pillars are considered. All of these effects influence the operation of orthogonal solar cells and should be considered in the design of vertically nanostructured orthogonal photovoltaics.

  13. 3D Field Simulation of Magnetic Thin Film Inductor

    OpenAIRE

    FUJIWARA, Toshiyasu; CHOI, Kyung-Ku; SATO, SHIGEKI

    2006-01-01

    The 3D magnetic field simulations with FEM (finite element method) have been performed to predictand understand the performance of Magnetic Thin Film Inductor (MTFl). Inductor structures of planar electroplated Cu spiralcoil, which are sandwiched and underlaid with magnetic thin films, are considered as the simulation models. The inductance increment of 300% compared to air-core inductor was predicted when the sandwiched 5μm thickness magnetic thin film with relative permeability of 600 was a...

  14. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  15. Crystal structure of fiber structured pentacene thin films

    OpenAIRE

    2007-01-01

    This PhD thesis presents a technique based on the grazing incidence crystal truncation rod (GI-CTR) X-ray diffraction method used to solve the crystal structure of substrate induced fiber structured organic thin films. The crystal structures of pentacene thin films grown on technologically relevant gate dielectric substrates are reported. It is widely recognized, that the intrinsic charge transport properties in organic thin film transistors (OTFTs) depend strongly on the crystal structur...

  16. Current-induced surface roughness reduction in conducting thin films

    Science.gov (United States)

    Du, Lin; Maroudas, Dimitrios

    2017-03-01

    Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film's wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. The modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.

  17. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  18. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  19. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  20. Design and Simulation of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and ADSL systems has been designed based on a domain wall pinning model, the parameters of nano-magnetic thin film such as permeability and coercivity can be calculated. The main properties of the thin film transformer including the size,parallel inductance, Q value and turn ratio have been simulated and optimized. Simulation results show that the thin film transformer can be fairly operated in a frequency range of 0. 001~20 MHz.

  1. Non-local thin films in Casimir force calculations

    CERN Document Server

    Esquivel, R

    2005-01-01

    he Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than the mean free path for electrons, the difference between local and nonlocal calculations of the Casimir force is of the order of a few tenths of a percent. Thus the local description of thin metallic films is adequate within the current experimental precision and range of separations.

  2. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  3. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  4. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  5. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  6. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement

    Science.gov (United States)

    Kim, Han Joon; Park, Min Hyuk; Kim, Yu Jin; Lee, Young Hwan; Moon, Taehwan; Kim, Keum Do; Hyun, Seung Dam; Hwang, Cheol Seong

    2016-01-01

    The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy-related devices. Interestingly, these materials showed a ``wake-up effect'', which refers to the increase in remanent polarization with increasing electric field cycling number before the occurrence of the fatigue effect. In this work, the wake-up effect from Hf0.5Zr0.5O2 was carefully examined by the pulse-switching experiment. In the pristine state, the Hf0.5Zr0.5O2 film mostly showed FE-like behavior with a small contribution from AFE-like distortion, which could be ascribed to the involvement of the AFE phase. The field cycling of only 100 cycles almost completely transformed the AFE phase into the FE phase by depinning the pinned domains. The influence of field cycling on the interfacial layer was also examined through the pulse-switching experiments.

  7. Analysis on mechanism of thin film lubrication

    Institute of Scientific and Technical Information of China (English)

    ZHANG Chaohui; LUO Jianbin; HUANG Zhiqiang

    2005-01-01

    It is an important concern to explore the properties and principles of lubrication at nano or molecularscale. For a long time, measurement apparatus for filmthickness of thin film lubrication (TFL) at nano scale havebeen devised on the basis of superthin interferometry technique. Many experiments were carried out to study the lubrication principles of TFL by taking advantages of aforementioned techniques, in an attempt to unveil the mechanism of TFL. Comprehensive experiments were conducted to explore the distinctive characteristics of TFL. Results show that TFL is a distinctive lubrication state other than any known lubrication ones, and serves as a bridge between elastohydrodynamic lubrication (EHL) and boundary lubrication (BL). Two main influence factors of TFL are the solid surface effects and the molecular properties of the lubricant, whose combination effects result in alignment of liquid molecules near the solid surfaces and subsequently lubrication with ordered film emerged. Results of theoretical analysis considering microstructure are consistent with experimental outcomes, thus validating the proposed mechanism.

  8. Electron impinging on metallic thin film targets

    Energy Technology Data Exchange (ETDEWEB)

    Rouabah, Z. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France); Laboratoire Materiaux et Systemes Electroniques, Centre Universitaire de Bordj-Bou-Arreridj, El-Anasser, 34265 Bordj-Bou-Arreridj (Algeria); Bouarissa, N., E-mail: N_Bouarissa@yahoo.fr [Department of Physics, Faculty of Science, King Khalid University, Abha, P.O.Box 9004 (Saudi Arabia); Champion, C. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France)

    2010-03-15

    Based on the Vicanek and Urbassek theory [M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] combined to a home-made Monte Carlo simulation, the present work deals with backscattering coefficients, mean penetration depths and stopping profiles for 1-4 keV electrons normally incident impinging on Al and Cu thin film targets. The cross-sections used to describe the electron transport are calculated via the appropriate analytical expression given by Jablonski [A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently given [Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The behavior of the backscattering coefficient, mean penetration depth and stopping profiles versus the metallic film thickness at the nanometric scale and beyond is here analyzed and discussed.

  9. Electrical Resistance Tomography of Conductive Thin Films

    CERN Document Server

    Cultrera, Alessandro

    2016-01-01

    The Electrical Resistance Tomography (ERT) technique is applied to the measurement of sheet conductance maps of both uniform and patterned conductive thin films. Images of the sheet conductance spatial distribution, and local conductivity values are obtained. Test samples are tin oxide films on glass substrates, with electrical contacts on the sample boundary, some samples are deliberately patterned in order to induce null conductivity zones of known geometry while others contain higher conductivity inclusions. Four-terminal resistance measurements among the contacts are performed with a scanning setup. The ERT reconstruction is performed by a numerical algorithm based on the total variation regularization and the L-curve method. ERT correctly images the sheet conductance spatial distribution of the samples. The reconstructed conductance values are in good quantitative agreement with independent measurements performed with the van der Pauw and the four-point probe methods.

  10. Separation Efficiency of Thin-film Evaporators

    Institute of Scientific and Technical Information of China (English)

    R.Billet

    2004-01-01

    The recovery of contaminants and useful substances from liquid wastes, the purification of production effluents and the separation of thermally instable mixtures are some of the multivarious applications of thin-film distillors in many processes of the chemical and allied industries and of the food industries. In a study carried out in pilot plants with distillation test systems there was found a good agreement between the experimental separation results and those obtained by computing with a theorectical model; the latter is based on the assumption of phase equilibrium between the vapour formed on an infinitely small element of area in a liquid film of any given concentric periphery of the vertically arranged evaporator. These tests were perfomed under various phase loads.

  11. Performance Comparison of Thin and Thick Film Microstrip Rejection Filters

    OpenAIRE

    Mandhare, M. M.; S.A. Gangal; M. S. Setty; Karekar, R. N.

    1988-01-01

    A performance comparison of microstripline circuits using thin and thick film techniques has been studied, in which a Microstrip rejection filter, in the X-band of microwaves, is used as test circuit. A thick film technique is capable of giving good adhesive films with comparable d.c. sheet resistivity, but other parameters such as open area (porosity), particle size, and edge definition are inferior to thin-film microstrip filters. Despite this drawback, the average value of transmission, tr...

  12. Infrared control coating of thin film devices

    Science.gov (United States)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  13. Robust, Thin Optical Films for Extreme Environments

    Science.gov (United States)

    2006-01-01

    The environment of space presents scientists and engineers with the challenges of a harsh, unforgiving laboratory in which to conduct their scientific research. Solar astronomy and X-ray astronomy are two of the more challenging areas into which NASA scientists delve, as the optics for this high-tech work must be extremely sensitive and accurate, yet also be able to withstand the battering dished out by radiation, extreme temperature swings, and flying debris. Recent NASA work on this rugged equipment has led to the development of a strong, thin film for both space and laboratory use.

  14. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  15. Synthesis and Characterization of Thin Films.

    Science.gov (United States)

    1987-07-10

    j,k tinteger; freq comp % array CO..203 of integer; A, phase ~carg : array CC. .2CJ of realI begin woriteln(’enter numfourierpts’);N readln(num fourier...Thesis DTIG SELECTfE: rmas do~amaat hau s appvildlttb tol a.l e... . . .o fix paut reloc~e and 9010) Is . < " ,,.’. 5’ , , "" "’’"°"" % Is ViifmyI lr...URIP) grants. 2. THIN FILM FACILITY A 1983 DoD University Research Instrumentation Program Grant to ISU was used for construction of the first phase

  16. Birefringent thin films and polarizing elements

    CERN Document Server

    Hodgkinson, Ian J

    1997-01-01

    This book describes the propagation of light in biaxial media, the properties of biaxial thin films, and applications such as birefringent filters for tuning the wavelength of dye lasers.A novel feature of the first part is the parallel treatment of Stokes, Jones, and Berreman matrix formalisms in a chapter-by-chapter development of wave equations, basis vectors, transfer matrices, reflection and transmission equations, and guided waves. Computational tools for MATLAB are included.The second part focuses on an emerging planar technology in which anisotropic microstructures are formed by obliqu

  17. Vortex motion in YBCO thin films

    Science.gov (United States)

    Shapiro, V.; Verdyan, A.; Lapsker, I.; Azoulay, J.

    1999-09-01

    Hall resistivity measurements as function of temperature in the vicinity of Tc were carried out on a thin films YBCO superconductors. A sign reversal of Hall voltage with external magnetic field applied along c axis have been observed upon crossing Tc. Hall voltage in the mixed state was found to be insensitive to the external magnetic field inversion. These effects are discussed and explained in terms of vortex motion under the influence of Magnus force balanced by large damping force. It is argued that in this model the flux-line velocity has component opposite to the superfluid current direction thus yielding a negative Hall voltage.

  18. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  19. Phase transitions in pure and dilute thin ferromagnetic films

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1983-10-01

    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  20. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  1. Capillary instabilities in thin films. II. Kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    We consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t/sup -3/4/ (log/sup 3/(t/ rho/sup 4//sub c/)). Small holes with a radii less than rho/sub c/ shrink, where rho/sub c/ is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size (rho/sub eq/) scales as rho/sup 2//sub eq/ or rho/sup 4//sub eq/ for evaporation/condensation or surface diffusion kinetics, respectively.

  2. Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1-xZrxO2 grains

    Science.gov (United States)

    Künneth, Christopher; Materlik, Robin; Kersch, Alfred

    2017-05-01

    Size effects from surface or interface energy play a pivotal role in stabilizing the ferroelectric phase in recently discovered thin film Zirconia-Hafnia. However, sufficient quantitative understanding has been lacking due to the interference with the stabilizing effect from dopants. For the important class of undoped Hf1-xZrxO2, a phase stability model based on free energy from Density functional theory (DFT) and surface energy values adapted to the sparse experimental and theoretical data has been successful to describe key properties of the available thin film data. Since surfaces and interfaces are prone to interference, the predictive capability of the model is surprising and directs to a hitherto undetected, underlying reason. New experimental data hint on the existence of an interlayer on the grain surface fixed in the tetragonal phase possibly shielding from external influence. To explore the consequences of such a mechanism, we develop an interface free energy model to include the fixed interlayer, generalize the grain model to include a grain radius distribution, calculate average polarization and permittivity, and compare the model with available experimental data. Since values for interface energies are sparse or uncertain, we obtain its values from minimizing the least square difference between predicted key parameters to experimental data in a global optimization. Since the detailed values for DFT energies depend on the chosen method, we repeat the search for different computed data sets and come out with quantitatively different but qualitatively consistent values for interface energies. The resulting values are physically very reasonable and the model is able to give qualitative prediction. On the other hand, the optimization reveals that the model is not able to fully capture the experimental data. We discuss possible physical effects and directions of research to possibly close this gap.

  3. Calculation of Specific Heat for Aluminium Thin Films

    Institute of Scientific and Technical Information of China (English)

    LU Yao; SONG Qing-Lin; XIA Shan-Hong

    2005-01-01

    @@ We employ Prasher's non-dimensional form to analyse the size effects on specific heat of Al thin films. Compared the calculation results of pure aluminium film with the experimental data, it is found that the reduction of phonon states is not the main reason of the size effect on the specific heat Al thin films with thickness from 10hm to 370nm. However, the Al thin film in air usually has an oxidation layer and the specific heat of the layer is smaller than Al. By including the contribution of the oxidation layer to the thin-film specific heat, the calculation results are much closer to the experimental data. This may be a possible reason of the size effects on specific heat of Al thin films.

  4. Wet-Chemical Surface Texturing of Sputter-Deposited ZnO:Al Films as Front Electrode for Thin-Film Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Xia Yan

    2015-01-01

    Full Text Available Transparent conductive oxides (TCOs play a major role as the front electrodes of thin-film silicon (Si solar cells, as they can provide optical scattering and hence improved photon absorption inside the devices. In this paper we report on the surface texturing of aluminium-doped zinc oxide (ZnO:Al or AZO films for improved light trapping in thin-film Si solar cells. The AZO films are deposited onto soda-lime glass sheets via pulsed DC magnetron sputtering. Several promising AZO texturing methods are investigated using diluted hydrochloric (HCl and hydrofluoric acid (HF, through a two-step etching process. The developed texturing procedure combines the advantages of the HCl-induced craters and the smaller and jagged—but laterally more uniform—features created by HF etching. In the two-step process, the second etching step further enhances the optical haze, while simultaneously improving the uniformity of the texture features created by the HCl etch. The resulting AZO films show large haze values of above 40%, good scattering into large angles, and a surface angle distribution that is centred at around 30°, which is known from the literature to provide efficient light trapping for thin-film Si solar cells.

  5. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  6. Antimony selenide thin-film solar cells

    Science.gov (United States)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  7. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  8. XPS study of palladium sensitized nano porous silicon thin film

    Indian Academy of Sciences (India)

    J Kanungo; L Selegård; C Vahlberg; K Uvdal; H Saha; S Basu

    2010-12-01

    Nano porous silicon (PS) was formed on -type monocrystalline silicon of 2–5 cm resistivity and (100) orientation by electrochemical anodization method using HF and ethanol as the electrolytes. High density of surface states, arising due to its nano structure, is responsible for the uncontrolled oxidation in air and for the deterioration of the PS surface with time. To stabilize the material PS surface was modified by a simple and low cost chemical method using PdCl2 solution at room temperature. X-ray photoelectron spectroscopy (XPS) was performed to reveal the chemical composition and the relative concentration of palladium on the nanoporous silicon thin films. An increase of SiO2 formation was observed after PdCl2 treatment and presence of palladium was also detected on the modified surface. – characteristics of Al/PS junction were studied using two lateral Al contacts and a linear relationship was obtained for Pd modified PS surface. Stability of the contact was studied for a time period of around 30 days and no significant ageing effect could be observed.

  9. Thermoluminescence in films of HfO{sub 2}:Dy{sup +3}; Termoluminiscencia en peliculas de HfO{sub 2}:Dy{sup +3}

    Energy Technology Data Exchange (ETDEWEB)

    Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Azorin, J. [Universidad Autonoma Metropolitana, Unidad Iztapalapa, San Rafael Atlixco 186, Col. Vicentina, 09340 Mexico D. F. (Mexico); Paredes, L., E-mail: victceronr@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2014-08-15

    In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO{sub 2}:Dy{sup +3}) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm{sup 2}-s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm{sup 2}), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO{sub 2}:Dy{sup +3} could be used as radiation monitor in the region of the near UV. (Author)

  10. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  11. Microstructural and mechanical characteristics of Ni–Cr thin films

    Energy Technology Data Exchange (ETDEWEB)

    Petley, Vijay [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India); Sathishkumar, S.; Thulasi Raman, K.H.; Rao, G.Mohan [Department of Instrumentation and Applied Physics, IISc, Bangalore 12 (India); Chandrasekhar, U. [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India)

    2015-06-15

    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

  12. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  13. Bistability in doped organic thin film transistors.

    Science.gov (United States)

    Stricker, Jeffery T; Gudmundsdóttir, Anna D; Smith, Adam P; Taylor, Barney E; Durstock, Michael F

    2007-09-06

    Organic thin film transitors (TFTs) with the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid), PEDOT:PSS, as the active layer and cross-linked, layer-by-layer assembled poly(allylamine hydrochloride)/poly(acrylic acid) (PAH/PAA) multilayers as the gate dielectric layer were investigated. A combination of spectroscopic data and device performance characteristics was used to study the behavior of these TFT devices under a variety of controlled environmental test conditions. It was shown that depletion and recovery of the device can be induced to occur by a means that is consistent with the electrochemical oxidation and reduction of water contained in the film. In addition to acting as a reactant, moisture also acts as a plasticizer to control the mobility of other species contained in the film and thereby permits bistable operation of these devices. Raman spectroscopy was used to show that the observed device switching behavior is due to a change in the PEDOT doping level.

  14. Oxynitride Thin Film Barriers for PV Packaging

    Energy Technology Data Exchange (ETDEWEB)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  15. Amorphous molybdenum silicon superconducting thin films

    Directory of Open Access Journals (Sweden)

    D. Bosworth

    2015-08-01

    Full Text Available Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1−x, though other amorphous superconductors such as molybdenum silicide (MoxSi1−x offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc reaches a maximum of 7.6 K at a composition of Mo83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz, there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  16. Vertically aligned biaxially textured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, Rahul [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Riley, Michael [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lee, Sabrina [US Army Armament Research, Development and Engineering Center, Benet Labs, Watervliet, New York 12189 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2011-09-15

    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  17. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  18. Thermochemical Analysis of Molybdenum Thin Films on Porous Alumina.

    Science.gov (United States)

    Lee, Kyoungjin; de Lannoy, Charles-François; Liguori, Simona; Wilcox, Jennifer

    2017-01-12

    Molybdenum (Mo) thin films (thickness thin-film composites were stable below 300 °C but had no reactivity toward gases. Mo thin films showed nitrogen incorporation on the surface as well as in the subsurface at 450 °C, as confirmed by X-ray photoelectron spectroscopy. The reactivity toward nitrogen was diminished in the presence of CO2, although no carbon species were detected either on the surface or in the subsurface. The Mo thin films have a very stable native oxide layer, which may further oxidize to higher oxidation states above 500 °C due to the reaction with the porous anodized alumina substrate. The oxidation of Mo thin films was accelerated in the presence of oxidizing gases. At 600 °C in N2, the Mo thin film on anodized alumina was completely oxidized and may also have been volatilized. The results imply that choosing thermally stable and inactive porous supports and operating in nonoxidizing conditions below 500 °C will likely maintain the stability of the Mo composite. This study provides key information about the chemical and structural stability of a Mo thin film on a porous substrate for future membrane applications and offers further insights into the integrity of thin-film composites when exposed to harsh conditions.

  19. Tools to Synthesize the Learning of Thin Films

    Science.gov (United States)

    Rojas, Roberto; Fuster, Gonzalo; Slusarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase…

  20. Stretchable, adhesive and ultra-conformable elastomer thin films.

    Science.gov (United States)

    Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

    2016-11-16

    Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (Tg). In this paper, we report that free-standing polystyrene (PS, Tg: 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, Tg: -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (Ra = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

  1. High temperature superconducting thin films for microwave filters

    Institute of Scientific and Technical Information of China (English)

    ZHAO; Xinjie(赵新杰); LI; Lin(李林); LEI; Chong(雷冲); TIAN; Ybngjun(田永军)

    2002-01-01

    YBa2Cu3O7-δ and Tl2Ba2CaCu2O8 thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.

  2. A thin-film device for detecting hydrogen

    NARCIS (Netherlands)

    Westerwaal, R.J.; Szilagyi, P.A.; Dam, B.

    2014-01-01

    The present invention relates to a thin-film device, to a method for producing a thin-film device, to a protective layer for shielding an oxygen, moisture and/or carbon monoxide sensitive surface, to a method for shielding such a surface, to a method for forming a metal framework material, to a hydr

  3. Study of thin-film resistor resistance error

    Directory of Open Access Journals (Sweden)

    Spirin V. G.

    2009-10-01

    Full Text Available A relationship between a thin-film resistor resistance error and mask misalignment with a substrate conductive layer at the second photolithography stage for a thin-film resistor design in which the resistive element does not overlap conductor pads is studied. The error value is at a maximum when the resistor aspect ratio is equal to 1.0.

  4. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid d

  5. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  6. Thermodynamics and kinetic behaviors of thickness-dependent crystallization in high-k thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nie, Xianglong; Ma, Fei; Ma, Dayan, E-mail: madayan@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Kewei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, People' s Republic of China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710049 (China)

    2015-01-15

    Atomic layer deposition is adopted to prepare HfO{sub 2} and Al{sub 2}O{sub 3} high-k thin films. The HfO{sub 2} thin films are amorphous at the initial growth stage, but become crystallized when the film thickness (h) exceeds a critical value (h{sub critical}{sup *}). This phase transition from amorphous to crystalline is enhanced at higher temperatures and is discussed, taking into account the effect of kinetic energy. At lower temperatures, the amorphous state can be maintained even when h>h{sub critical}{sup *} owing to the small number of activated atoms. However, the number of activated atoms increases with the temperature, allowing crystallization to occur even in films with smaller thickness. The Al{sub 2}O{sub 3} thin films, on the other hand, maintain their amorphous state independent of the film thickness and temperature owing to the limited number of activated atoms. A thermodynamic model is proposed to describe the thickness-dependent phase transition.

  7. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  8. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki

    2015-09-01

    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  9. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  10. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  11. Preface: Advanced Thin Film Developments and Nano Structures

    Institute of Scientific and Technical Information of China (English)

    Ray Y.Lin

    2005-01-01

    @@ In this special issue, we invited a few leading materials researchers to present topics in thin films, coatings, and nano structures. Readers will find most recent developments in topics, including recent advances in hard, tough, and low friction nanocomposite coatings; thin films for coating nanomaterials; electroless plating of silver thin films on porous Al2O3 substrate; CrN/Nano Cr interlayer coatings; nano-structured carbide derived carbon (CDC) films and their tribology; predicting interdiffusion in high-temperature coatings; gallium-catalyzed silica nanowire growth; and corrosion protection properties of organofunctional silanes. Authors are from both national laboratories and academia.

  12. Nonlinear optical microscopy for imaging thin films and surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Smilowitz, L.B.; McBranch, D.W.; Robinson, J.M.

    1995-03-01

    We have used the inherent surface sensitivity of second harmonic generation to develop an instrument for nonlinear optical microscopy of surfaces and interfaces. We have demonstrated the use of several nonlinear optical responses for imaging thin films. The second harmonic response of a thin film of C{sub 60} has been used to image patterned films. Two photon absorption light induced fluorescence has been used to image patterned thin films of Rhodamine 6G. Applications of nonlinear optical microscopy include the imaging of charge injection and photoinduced charge transfer between layers in semiconductor heterojunction devices as well as across membranes in biological systems.

  13. Thin films and coatings toughening and toughness characterization

    CERN Document Server

    Zhang, Sam

    2015-01-01

    Thin Films and Coatings: Toughening and Toughness Characterization captures the latest developments in the toughening of hard coatings and in the measurement of the toughness of thin films and coatings. Featuring chapters contributed by experts from Australia, China, Czech Republic, Poland, Singapore, Spain, and the United Kingdom, this first-of-its-kind book:Presents the current status of hard-yet-tough ceramic coatingsReviews various toughness evaluation methods for films and hard coatingsExplores the toughness and toughening mechanisms of porous thin films and laser-treated surfacesExamines

  14. Peculiarities of spin reorientation in a thin YIG film.

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya. B.; Tsymbal, L. T.; Linnik, A. I.; Dan' shin, N. K.; Izotov, A. I.; Wigen, P. E.

    2002-06-28

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1{micro}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  15. Peculiarities of spin reorientation in a thin YIG film

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya.B.; Tsymbal, L.T.; Linnik, A.I.; Dan' shin, N.K.; Izotov, A.I.; Wigen, P.E

    2003-05-01

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1 {mu}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  16. Electrochemical Intercalation of Sodium into Silicon Thin Film

    Institute of Scientific and Technical Information of China (English)

    Dong-Yeon Kim; Hyo-Jun Ahn; Gyu-Bong Cho; Jong-Seon Kim; Ho-Suk Ryu; Ki-Won Kim; Jou-Hyeon Ahn; Won-Cheol Shin

    2008-01-01

    In order to investigate the possibility of Si thin film as an anode for Na battery, we studied the electrochemical intercalation of sodium into the Si film. Amorphous Si thin film electrode was prepared using DC magnetron sputtering. Sodium ion could intercalate into Si thin film upto Na0.52Si, i.e. 530mAh · g-1-Si. The first discharge capacity was 80mAh.·g-1-Si, which meant reversible amount of sodium intercalation. The discharge capacity slightly decreased to 70mAh · g-1-Si after 10 cycles.

  17. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  18. Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    Fan Ji-Bin; Liu Hong-Xia; Gao Bo; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2012-01-01

    Based on X-ray photoelectron spectroscopy (XPS),influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition (ALD) are investigated in this paper.The measured valence band offset (VBO) value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing,whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV.The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process,which plays a key role in generating the internal electric field formed by the dipoles.The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lead the VBO values of H2O-based and O3-based HfO2 to vary in different ways,which fits with the variation of fiat band (VFB) voltage.

  19. Phase Equilibria in Thin Polymer Films

    Science.gov (United States)

    Müller, M.; Binder, K.; Albano, E. V.

    Within self-consistent field theory and Monte Carlo simulations the phase behavior of a symmetrical binary AB polymer blend confined into a thin film is studied. The film surfaces interact with the monomers via short ranged potentials. One surface attracts the A component and the corresponding semi-infinite system exhibits a first order wetting transition. The surface interaction of the opposite surface is varied as to study the crossover from capillary condensation for symmetric surface fields to interface localization/delocalization transition for antisymmetric surface fields. In the former case the phase diagram has a single critical point close to the bulk critical point. In the latter case the phase diagram exhibits two critical points which correspond to the prewetting critical points of the semi-infinite system. Only below a triple point there is a single two-phase coexistence region. The crossover between these qualitatively different limiting behaviors occurs gradually, however, the critical temperature and the critical composition exhibit a non-monotonic dependence on the surface field. The dependence of the phase behavior for antisymmetric boundaries is studied as a function of the film thickness and the strength of the surface interactions. Upon reducing the film thickness or decreasing the strength of the surface interactions we can change the order of the interface localization/delocalization transition from first to second. The role of fluctuations is explored via Monte Carlo simulations of a coarse grained lattice model. Close to the (prewetting) critical points we observe 2D Ising critical behavior. Also, there is a rich crossover behavior between Ising critical, tricritical and mean field behavior. At lower temperatures capillary waves of the AB interface lead to a pronounced dependence of the effective interface potential on the lateral system size.

  20. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  1. Mechanism and characters of thin film lubrication at nanometer scale

    Institute of Scientific and Technical Information of China (English)

    雒建斌; 温诗铸

    1996-01-01

    Thin film lubrication is a transition region between elastohydrodynamic lubrication and boundary lubrication, A technique of relative optical interference intensity with the resolution of 0.5 nm in the vertical direction and 1.5 nm in the horizontal direction is used in a pure rolling process to measure the film thickness with different lubricants, speeds, loads and substrate surface energy. Experimental data show that the characteristics of thin film lubrication are different from those of elastohydrodynamic lubrication and boundary lubrication. As the rolling speed decreases, a critical film thickness can be found to distinguish thin film lubrication from elastohydrodynamic lubrication. Such thickness is related to the substrate surface energy, atmospheric viscosity of lubricant, etc. A physical model of thin film lubrication with the fluid layer, the ordered liquid layer and the adsorbed layer is proposed and the functions of these different layers are discussed.

  2. Density of organic thin films in organic photovoltaics

    Science.gov (United States)

    Zhao, Cindy X.; Xiao, Steven; Xu, Gu

    2015-07-01

    A practical parameter, the volume density of organic thin films, found to affect the electronic properties and in turn the performance of organic photovoltaics (OPVs), is investigated in order to benefit the polymer synthesis and thin film preparation in OPVs. To establish the correlation between film density and device performance, the density of organic thin films with various treatments was obtained, by two-dimensional X-ray diffraction measurement using the density mapping with respect to the crystallinity of thin films. Our results suggest that the OPV of higher performance has a denser photoactive layer, which may hopefully provide a solution to the question of whether the film density matters in organic electronics, and help to benefit the OPV industry in terms of better polymer design, standardized production, and quality control with less expenditure.

  3. A versatile platform for magnetostriction measurements in thin films

    Science.gov (United States)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  4. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  5. Na2Ti6O13 thin films as anode for thin film sodium ion batteries

    Science.gov (United States)

    Rambabu, A.; Kishore, B.; Munichandraiah, N.; Krupanidhi, S. B.; Barpanda, P.

    2017-05-01

    The pulsed laser deposition was employed to produce Na2Ti6O13 (NTO) thin films, which were applied as an anode material for Sodium-Ion batteries (SIBs). X-ray diffraction made it clear that the film is crystalline in single phase. Morphology and elemental composition studies were done using FESEM. Grain size and surface roughness was measured from atomic force microscopy. The electrochemical measurements were performed at 0.5 - 3V range and it exhibited the initial discharge capacity was 49.7 µAh/μm-cm2 with coulombic efficiency 69.8%.

  6. Characterization of reliability of printed indium tin oxide thin films.

    Science.gov (United States)

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments.

  7. An overview of thin film nitinol endovascular devices.

    Science.gov (United States)

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications.

  8. Altering properties of cerium oxide thin films by Rh doping

    Energy Technology Data Exchange (ETDEWEB)

    Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Haviar, Stanislav, E-mail: stanislav.haviar@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Matolín, Vladimír, E-mail: matolin@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  9. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  10. The Potentiostatic Electrodeposition of Indium doped Aluminium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    R.K. Pathak and Sipi Mohan

    2013-12-01

    Full Text Available The In containing AlSe thin films were electrosynthesized by electrochemical co-deposition technique. The morphological properties of thin films were studied through the Scanning Electron Micrograph (SEM while the structural features through X-Ray Diffraction technique (XRD. The deposition current along with the film thickness values, the charge carrier density, flat band potential, corrosion characteristics i.e., corrosion current, corrosion potential and corrosion rate were calculated.

  11. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  12. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  13. On Ginzburg-Landau Vortices of Superconducting Thin Films

    Institute of Scientific and Technical Information of China (English)

    Shi Jin DING; Qiang DU

    2006-01-01

    In this paper, we discuss the vortex structure of the superconducting thin films placed in a magnetic field. We show that the global minimizer of the functional modelling the superconducting thin films has a bounded number of vortices when the applied magnetic field hex < Hc1 + K log |log ε|where Hc1 is the lower critical field of the film obtained by Ding and Du in SIAM J. Math. Anal.,2002. The locations of the vortices are also given.

  14. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    Science.gov (United States)

    Köllensperger, P. A.; Karl, W. J.; Ahmad, M. M.; Pike, W. T.; Green, M.

    2012-06-01

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant.

  15. The corrosion behavior of nanocrystalline nickel based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Danışman, Murat, E-mail: muratdan@gmail.com

    2016-03-01

    In this study, the effect of Cr addition on corrosion behavior of Ni thin films were investigated. Ni thin films and Ni films with three different Cr content were deposited on glass substrates by magnetron sputtering. After deposition process, thin films with different Cr content were thermally treated in a rapid thermal process system. Phase analysis and grain size calculations of the samples were carried out by X-ray diffraction analysis. In order to reveal corrosion properties, potentiodynamic tests were conducted on samples. Analysis revealed that, although Cr addition to pure-Ni thin films improved their corrosion resistance, occurrence of σ-Cr{sub 3}Ni{sub 2} phase at higher Cr contents increased corrosion rate. The corrosion properties of the samples were also investigated by electrochemical impedance spectroscopy and surface related parameters caused by corrosion reactions were calculated. The analysis revealed that at 55% wt. Cr, rapid ion exchange occurred and highest corrosion current, 23.4 nA cm{sup −2} was observed. - Highlights: • Thin film Ni–Cr samples were deposited on glass substrate. • Effect of Cr addition on corrosion behavior of Ni thin films were investigated. • Potentiodynamic tests and electrochemical impedance spectroscopy methods were used. • Cr content in Ni thin films plays and important role on corrosion. • Up to a certain Cr content, Cr addition reduces corrosion rate.

  16. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  17. Patterns and conformations in molecularly thin films

    Science.gov (United States)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  18. Photoluminescence studies in epitaxial CZTSe thin films

    Science.gov (United States)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne

    2016-09-01

    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  19. Characterization of lithium phosphorous oxynitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xiaohua; Bates, J.B.; Jellison, G.E. Jr.

    1996-01-01

    Electrical and electrochemical properties of an amorphous thin-film lithium electrolyte, lithium phosphorous oxynitride (Lipon), have been studied with emphasis on the stability window vs Li metal and the behavior of the Li/Lipon interface. Ion conductivity of Lipon exhibits Arrhenius behavior at {minus}26 to +140 C, with a conductivity of 1.7 {times} 10{sup {minus}6}S/cm at 25 C and an activity energy of 0.50 {plus_minus} 0.01 eV. A stability window of 5.5 V was observed with respect to a Li{sup +}/Li reference, and no detectable reaction or degradation was evident at the Li/Lipon interface upon lithium cycling.

  20. Nonlinear optics of astaxanthin thin films

    Science.gov (United States)

    Esser, A.; Fisch, Herbert; Haas, Karl-Heinz; Haedicke, E.; Paust, J.; Schrof, Wolfgang; Ticktin, Anton

    1993-02-01

    Carotinoids exhibit large nonlinear optical properties due to their extended (pi) -electron system. Compared to other polyenes which show a broad distribution of conjugation lengths, carotinoids exhibit a well defined molecular structure, i.e. a well defined conjugation length. Therefore the carotinoid molecules can serve as model compounds to study the relationship between structure and nonlinear optical properties. In this paper the synthesis of four astaxanthins with C-numbers ranging from 30 to 60, their preparation into thin films, wavelength dispersive Third Harmonic Generation (THG) measurements and some molecular modelling calculations will be presented. Resonant (chi) (3) values reach 1.2(DOT)10-10 esu for C60 astaxanthin. In the nonresonant regime a figure of merit (chi) (3)/(alpha) of several 10-13 esu-cm is demonstrated.

  1. Photodesorption from copper, beryllium, and thin films

    Science.gov (United States)

    Foerster, C. L.; Halama, H. J.; Korn, G.

    Ever increasing circulating currents in electron-positron colliders and light sources demand lower and lower photodesportion (PSD) from the surfaces of their vacuum chambers and their photon absorbers. This is particularly important in compact electron storage rings and B meson factories where photon power of several kw cm(exp -1) is deposited on the surfaces. Given the above factors, we have measured PSD from 1 m long bars of solid copper and solid beryllium, and TiN, Au and C thin films deposited on solid copper bars. Each sample was exposed to about 10(exp 23) photons/m with a critical energy of 500 eV at the VUV ring of the NSLS. PSD was recorded for two conditions: after a 200 C bake-out and after an Ar glow discharge cleaning. In addition, we also measured reflected photons, photoelectrons and desorption as functions of normal, 75 mrad, 100 mrad, and 125 mrad incident photons.

  2. Determination of magnetic properties of multilayer metallic thin films

    CERN Document Server

    Birlikseven, C

    2000-01-01

    and magnetization measurements were taken. In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the exper...

  3. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  4. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  5. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  6. Plasma synthesis of photocatalytic TiO x thin films

    Science.gov (United States)

    Sirghi, L.

    2016-06-01

    The development of efficient photocatalytic materials is promising technology for sustainable and green energy production, fabrication of self-cleaning, bactericidal, and super hydrophilic surfaces, CO2 photoreduction, and decomposition of toxic pollutants in air and water. Semiconductors with good photocatalytic activity have been known for four decades and they are regarded as promising candidates for these new technologies. Low-pressure discharge plasma is one of the most versatile technologies being used for the deposition of photocatalytic semiconductor thin films. This article reviews the main results obtained by the author in using low-pressure plasma for synthesis of TiO x thin films with applications in photocatalysis. Titanium dioxide thin films were obtained by radio frequency magnetron sputtering deposition, plasma enhanced chemical vapour deposition, and high power impulse magnetron sputtering deposition. The effects of the plasma deposition method, plasma parameters, film thickness and substrate on the film structure, chemical composition and photocatalytic activity are investigated. The photocatalytic activity of plasma synthesised TiO x thin films was estimated by UV light induced hydrophilicity. Measurements of photocurrent decay in TiO x thin films in vacuum and air showed that the photocatalytic activity is closely connected to the production, recombination and availability for surface reactions of photo-generated charge carriers. The photocatalytic activity of TiO x thin films was investigated at nanoscale by atomic force microscopy. Microscopic regions of different hydrophilicity on UV light irradiated films are discriminated by AFM atomic force microscopy measurements of adhesion and friction force.

  7. Reorientation of magnetic anisotropy in obliquely sputtered metallic thin films

    NARCIS (Netherlands)

    Lisfi, A.; Lodder, J.C.; Wormeester, H.; Poelsema, B.

    2002-01-01

    Reorientation in the magnetic anisotropy as a function of film thickness has been observed in Co-Ni and Co thin films, obliquely sputtered on a polyethylene terephthalate substrate at a large incidence angle (70°). This effect is a consequence of the low magnetocrystalline anisotropy of the films (f

  8. Orthogonal thin film magnetometer using the anisotropic magnetoresistance effect

    NARCIS (Netherlands)

    Ridder, de René M.; Fluitman, Jan H.

    1984-01-01

    In an orthogonal thin film magnetometer a driving field oriented in the plane of a permalloy film along its hard-axis, saturates this film periodically in positive and negative direction. On return from saturation and in absence of a magnetic field component along the easy-axis, the magnetization in

  9. Magnesium diboride thin films and devices

    Science.gov (United States)

    Cui, Yi

    Magnesium diboride (MgB2) is a binary compound superconductor with a superconducting transition temperature Tc of ˜40 K. MgB2 has two conduction bands: a two-dimensional sigma band and a three-dimensional pi band with weak interband scattering. The two gap superconductivity in MgB2 gives rise to many interesting physical properties not possible in other superconductors. The relatively high Tc combined with phonon mediated superconductivity and relatively long coherence length makes MgB2 promising for electronics applications like rapid single flux quantum (RSFQ) logics and superconducting quantum interference devices (SQUID). The high current density and record-high upper critical field in pure or alloyed MgB2 are also attractive to a variety of high field applications including cryogen-free Magnetic Resonance Imaging (MRI) systems. MgB2 may also be used in RF cavity coatings due to its low surface resistance and in photo detection due to its fast photoresponse coupled with relatively high Tc. High quality epitaxial thin films are produced by the hybrid physical-chemical vapor deposition (HPCVD) technique. The HPCVD MgB2 thin films have the highest Tc and lowest resistivity with sharp transition of all MgB2 materials reported. The HPCVD MgB2 material is free of dendritic flux jumps due to its low resistivity. The root-mean-square (RMS) surface roughness of HPCVD MgB2 films can be ˜1 nm when ˜1% of nitrogen is added to the hydrogen carrier gas during the growth. The stability of MgB2 films in water is studied; it is found that degradation can be prevented by a thin (10 nm) MgO layer deposited on the film surface. The Tc is enhanced by tensile strain due to the Volmer-Weber growth mode and the mismatches between MgB2 and the substrate in the lattice constants and the coefficients of thermal expansion. High quality superconductor-insulator-superconductor Josephson tunnel junctions were made with various barrier formation techniques. The junction critical current

  10. Wettability and photochromic behaviour of Molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Allogho, Guy-Germain, E-mail: guy-germain.allogho@umoncton.ca; Ashrit, P.V., E-mail: pandurang.ashrit@umoncton.ca

    2012-01-01

    The temporal wettability (hydrophobic-hydrophilic) behaviour of thermally evaporated Molybdenum oxide thin films is examined via water droplet contact angle and water droplet lifetime measurements. Super-hydrophilic state is quickly achieved in these films and the rapidity of this conversion depends strongly on the film preparation conditions. It is found that film microstructure, humidity content and UV irradiation have a profound influence on the wettability behaviour of these films. The ensuing photochromic effect under UV irradiation is also followed through the optical changes occurring in the film. Films deposited at higher chamber pressure have a generally smaller initial contact angle and lifetime.

  11. Two approaches for enhancing the hydrogenation properties of palladium: Metal nanoparticle and thin film over layers

    Indian Academy of Sciences (India)

    Manika Khanuja; B R Mehta; S M Shivaprasad

    2008-11-01

    In the present study, two approaches have been used for enhancing the hydrogenation properties of Pd. In the first approach, metal thin film (Cu, Ag) has been deposited over Pd and hydrogenation properties of bimetal layer Cu (thin film)/Pd(thin film) and Ag(thin film)/Pd(thin film) have been studied. In the second approach, Ag metal nanoparticles have been deposited over Pd and hydrogenation properties of Ag (nanoparticle)/Pd (thin film) have been studied and compared with Ag(thin film)/Pd(thin film) bimetal layer system. The observed hydrogen sensing response is stable and reversible over a number of hydrogen loading and deloading cycles in both bimetallic systems. Alloying between Ag and Pd is suppressed in case of Ag(nanoparticle)/Pd(thin film) bimetallic layer on annealing as compared to Ag (thin film)/Pd(thin film).

  12. Highly ordered nanotubular film formation on Ti–25Nb–xZr and Ti–25Ta–xHf

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeong-Jae; Byeon, In-Seop [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, & Research Center for Oral Disease Regulation of the Aged, College of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative Sciences and Prosthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, & Research Center for Oral Disease Regulation of the Aged, College of Dentistry, Chosun University, Gwangju (Korea, Republic of)

    2015-12-01

    The purpose of this study was to investigate the highly ordered nanotubular film formation on Ti–25Nb–xZr and Ti–25Ta–xHf, examining the roles of niobium, zirconium, tantalum and hafnium alloying elements. The Ti–25Nb–xZr and Ti–25Ta–xHf ternary alloys contained 0, 7 and 15 wt.% of these alloying elements and were manufactured using a vacuum arc-melting furnace. Cast ingots of the alloys were homogenized in Ar atmosphere at 1050 °C for 2 h, followed by quenching into ice water. Formation of nanotubular films was achieved by an electrochemical method in 1 M H{sub 3}PO{sub 4} + 0.8 wt.% NaF at 30 V and 1 h for the Ti–25Nb–xZr alloys and 2 h for the Ti–25Ta–xHf alloys. Microstructures of the Ti–25Ta–xHf alloys transformed from α″ phase to β phase, changing from a needle-like structure to an equiaxed structure as the Hf content increased. In a similar manner, the needle-like structure of the Ti–25Nb–xZr alloys transformed to an equiaxed structure as the Zr content increased. Highly ordered nanotubes formed on the Ti–25Ta–15Hf and Ti–25Nb–15Zr alloys compared to the other alloys, and the nanotube layer thickness on Ti–25Ta–15Hf and Ti–25Nb–15Zr was greater than for the other alloys. Nanotubes formed on Ti–25Ta–15Hf and Ti–25Nb–15Zr showed two sizes of highly ordered structures. The diameters of the large nanotubes decreased and the diameters of the small nanotubes increased as Zr and Hf contents increased. It was found that the layer thickness, diameter, surface density and growth rate of nanotubes on the Ti–25Ta–xHf and Ti–25Nb–xZr alloys can be controlled by varying the Hf and Zr contents. X-ray diffraction analyses revealed only weak peaks for crystalline anatase or rutile TiO{sub 2} phases from the nanotubes on the Ti–25Nb–xZr and Ti–25Ta–xHf alloys, indicating a largely amorphous condition. - Highlights: • Nanotubular film formation on anodized Ti-25Nb-xZr and Ti-25Ta-xHf (x = 0, 7 and

  13. Eddy current analysis of thin film recording heads

    Science.gov (United States)

    Shenton, D.; Cendes, Z. J.

    1984-03-01

    Due to inherently thin pole tips which enhance the sharpness of read/write pulses, thin-film magnetic recording heads provide a unique potential for increasing disk file capacity. However, the very feature of these heads which makes them attractive in the recording process, namely, their small size, also makes thin-film heads difficult to study experimentally. For this reason, a finite element simulation of the thin-film head has been developed to provide the magnetic field distribution and the resistance/inductance characteristics of these heads under a variety of conditions. A study based on a one-step multipath eddy current procedure is reported. This procedure may be used in thin film heads to compute the variation of magnetic field with respect to frequency. Computations with the IBM 3370 head show that a large phase shift occurs due to eddy currents in the frequency range 1-10 MHz.

  14. Organic photo detectors for an integrated thin-film spectrometer

    Science.gov (United States)

    Peters, Sabine; Sui, Yunwu; Glöckler, Felix; Lemmer, Uli; Gerken, Martina

    2007-09-01

    We introduce a thin-film spectrometer that is based on the superprism effect in photonic crystals. While the reliable fabrication of two and three dimensional photonic crystals is still a challenge, the realization of one-dimensional photonic crystals as thin-film stacks is a relatively easy and inexpensive approach. Additionally, dispersive thin-film stacks offer the possibility to custom-design the dispersion profile according to the application. The thin-film stack is designed such that light incident at an angle experiences a wavelength-dependent spatial beam shift at the output surface. We propose the monolithic integration of organic photo detectors to register the spatial beam position and thus determine the beam wavelength. This thin-film spectrometer has a size of approximately 5 mm2. We demonstrate that the output position of a laser beam is determined with a resolution of at least 20 μm by the fabricated organic photo detectors. Depending on the design of the thin-film filter the wavelength resolution of the proposed spectrometer is at least 1 nm. Possible applications for the proposed thin-film spectrometer are in the field of absorption spectroscopy, e.g., for gas analysis or biomedical applications.

  15. Optical and Structural Properties of Ultra-thin Gold Films

    CERN Document Server

    Kossoy, Anna; Simakov, Denis; Leosson, Kristjan; Kéna-Cohen, Stéphane; Maier, Stefan A

    2014-01-01

    Realizing laterally continuous ultra-thin gold films on transparent substrates is a challenge of significant technological importance. In the present work, formation of ultra-thin gold films on fused silica is studied, demonstrating how suppression of island formation and reduction of plasmonic absorption can be achieved by treating substrates with (3-mercaptopropyl) trimethoxysilane prior to deposition. Void-free fi lms with deposition thickness as low as 5.4 nm are realized and remain structurally stable at room temperature. Based on detailed structural analysis of the fi lms by specular and diffuse X-ray reflectivity measurements, it is shown that optical transmission properties of continuous ultra-thin films can be accounted for using the bulk dielectric function of gold. However, it is important to take into account the non-abrupt transition zone between the metal and the surrounding dielectrics, which extends through several lattice constants for the laterally continuous ultra-thin films (film thickness...

  16. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films.

    Science.gov (United States)

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C

    2017-01-01

    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  17. Optical properties of rubrene thin film prepared by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    陈亮; 邓金祥; 孔乐; 崔敏; 陈仁刚; 张紫佳

    2015-01-01

    Rubrene thin films are deposited on quartz substrates and silver nanoparticles (Ag NPs) films by the thermal evapo-ration technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient (α) reveals direct allowed transition with a corresponding energy of 2.24 eV. The photoluminescence (PL) peak of the rubrene thin film is observed to be at 563 nm (2.21 eV). With the use of Ag NPs which are fabricated by radio-frequency (RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.

  18. Nanoscale Thin Film Electrolytes for Clean Energy Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nandasiri, Manjula I.; Sanghavi, Rahul P.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai

    2012-02-01

    Ceria and zirconia based systems can be used as electrolytes to develop solid oxide fuel cells for clean energy production and to prevent air pollution by developing efficient, reliable oxygen sensors. In this study, we have used oxygen plasma assisted molecular beam epitaxy (OPA-MBE) to grow samaria doped ceria (SDC), to understand the role of dopant concentration and geometry of the films towards the ionic conduction in these thin films. We have also discussed the Gd doped CeO2 (GDC) and Gd stabilized ZrO2 (GSZ) multi-layer thin films to investigate the effect of interfacial phenomena on the ionic conductivity of these hetero-structures. We found the optimum concentration to be 15 mol % SmO1.5, for achieving lowest electrical resistance in SDC thin films. The electrical resistance decreases with the increase in film thickness up to 200 nm. The results demonstrate the usefulness of this study towards establishing an optimum dopant concentration and choosing an appropriate thin film thickness to ameliorate the conductance of the SDC material system. Furthermore, we have explored the conductivity of highly oriented GDC and GSZ multi-layer thin films, wherein the conductivity increased with an increase in the number of layers. The extended defects and lattice strain near the interfaces increase the density of oxygen vacancies, which leads to enhanced ionic conductivity in multi-layer thin films.

  19. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  20. Grain size and film thickness effect on the thermal expansion coefficient of FCC metallic thin films.

    Science.gov (United States)

    Hwang, Seulgi; Kim, Youngman

    2011-08-01

    Thin films are used in wide range of applications in industry, such as solar cells and LEDs. When thin films are deposited on substrates, various stresses are generated due to the mechanical difference between the film and substrate. These stresses can cause defects, such as cracking and buckling. Therefore, knowledge of the mechanical properties is important for improving their reliability and stability. In this study, the thermal expansion coefficient of FCC metallic thin films, such as Ag and Cu, which have different grain sizes and thicknesses, were calculated using the thermal cycling method. As a result, thermal expansion coefficient increased with increasing grain size. However, the film thickness had no remarkable effect.