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Sample records for hf silicate films

  1. Ti-catalyzed HfSiO4 formation in HfTiO4 films on SiO2 studied by Z-contrast scanning electron microscopy

    Directory of Open Access Journals (Sweden)

    Elizabeth Ellen Hoppe

    2013-08-01

    Full Text Available Hafnon (HfSiO4 as it is initially formed in a partially demixed film of hafnium titanate (HfTiO4 on fused SiO2 is studied by atomic number (Z contrast high resolution scanning electron microscopy, x-ray diffraction, and Raman spectroscopy and microscopy. The results show exsoluted Ti is the catalyst for hafnon formation by a two-step reaction. Ti first reacts with SiO2 to produce a glassy Ti-silicate. Ti is then replaced by Hf in the silicate to produce HfSiO4. The results suggest this behavior is prototypical of other Ti-bearing ternary or higher order oxide films on SiO2 when film thermal instability involves Ti exsolution.

  2. Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Moon, Tae-Hyoung; Ham, Moon-Ho; Myoung, Jae-Min

    2005-03-01

    We present the annealing effects on nanochemistry and electrical properties in HfO2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of HfO2 films in the temperature range of 600-800°C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700°C. This result supports that the accumulation capacitance of the sample annealed at 700°C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600°C.

  3. Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering

    Institute of Scientific and Technical Information of China (English)

    JIANG Ran; LI Zi-Feng

    2009-01-01

    The chemical structure of ultrathin Hf oxide films (< 10 nm) fabricated by a standard sputtering method is investigated using x-ray spectroscopy and Rutherford backscattering spectroscopy. According to the experiments,oxygen species are impacted to the HfO2/Si interface during the initial sputtering, and then released back to the upper Hf02 region driven by the oxygen concentration grads. A vacuum annealing can greatly enhance this recovery process. Additionally, significant SiO2 reduction in the interface is observed after the vacuum annealing for the thick HfO2 films in our experiment. It might be an effective method to confine the interracial layer thickness by sputtering thick HfO2 in no-oxygen ambient.

  4. Comparison of hafnium silicate thin films on silicon (1 0 0) deposited using thermal and plasma enhanced metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rangarajan, Vishwanathan; Bhandari, Harish; Klein, Tonya M

    2002-11-01

    Hafnium silicate thin films were deposited by metal organic chemical vapor deposition (MOCVD) on Si at 400 deg. C using hafnium (IV) t-butoxide. Films annealed in O{sub 2} were compared to as-deposited films using X-ray photoelectron spectroscopy and X-ray diffraction. Hafnium silicate films were deposited by both thermal and plasma enhanced MOCVD using 2% SiH{sub 4} in He as the Si precursor. An O{sub 2} plasma increased Si content to as much as {approx}26 at.% Si. Both thermal and plasma deposited Hf silicates are amorphous as deposited, however, thermal films exhibit crystallinity after anneal. Surface roughness as measured by atomic force microscopy was found to be 1.1 and 5.1 nm for MOCVD hafnium silicate and plasma enhanced MOCVD hafnium silicate, respectively.

  5. Epitaxial Thin Films of Y doped HfO2

    Science.gov (United States)

    Serrao, Claudy; Khan, Asif; Ramamoorthy, Ramesh; Salahuddin, Sayeef

    Hafnium oxide (HfO2) is one of a few metal oxides that is thermodynamically stable on silicon and silicon oxide. There has been renewed interest in HfO2 due to the recent discovery of ferroelectricity and antiferroelectricity in doped HfO2. Typical ferroelectrics - such as strontium bismuth tantalate (SBT) and lead zirconium titanate (PZT) - contain elements that easily react with silicon and silicon oxide at elevated temperatures; therefore, such ferroelectrics are not suited for device applications. Meanwhile, ferroelectric HfO2 offers promise regarding integration with silicon. The stable phase of HfO2 at room temperature is monoclinic, but HfO2 can be stabilized in the tetragonal, orthorhombic or even cubic phase by suitable doping. We stabilized Y-doped HfO2 thin films using pulsed laser deposition. The strain state can be controlled using various perovskite substrates and controlled growth conditions. We report on Y-doped HfO2 domain structures from piezo-response force microscopy (PFM) and structural parameters via X-ray reciprocal space maps (RSM). We hope this work spurs further interest in strain-tuned ferroelectricity in doped HfO2.

  6. Microstructure and optical properties of Pr3+-doped hafnium silicate films

    Science.gov (United States)

    2013-01-01

    In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, while the emission properties have been studied by means of photoluminescence (PL) and PL excitation (PLE) spectroscopies. It was observed that a post-annealing treatment favors the phase separation in hafnium silicate matrix being more evident at 950°C. The HfO2 phase demonstrates a pronounced crystallization in tetragonal phase upon 950°C annealing. Pr3+ emission appeared at TA = 950°C, and the highest efficiency of Pr3+ ion emission was detected upon a thermal treatment at 1,000°C. Analysis of the PLE spectra reveals an efficient energy transfer from matrix defects towards Pr3+ ions. It is considered that oxygen vacancies act as effective Pr3+ sensitizer. Finally, a PL study of undoped HfO2 and HfSiOx matrices is performed to evidence the energy transfer. PMID:23336520

  7. Electron stimulated hydroxylation of a metal supported silicate film.

    Science.gov (United States)

    Yu, Xin; Emmez, Emre; Pan, Qiushi; Yang, Bing; Pomp, Sascha; Kaden, William E; Sterrer, Martin; Shaikhutdinov, Shamil; Freund, Hans-Joachim; Goikoetxea, Itziar; Wlodarczyk, Radoslaw; Sauer, Joachim

    2016-02-01

    Water adsorption on a double-layer silicate film was studied by using infrared reflection-absorption spectroscopy, thermal desorption spectroscopy and scanning tunneling microscopy. Under vacuum conditions, small amounts of silanols (Si-OH) could only be formed upon deposition of an ice-like (amorphous solid water, ASW) film and subsequent heating to room temperature. Silanol coverage is considerably enhanced by low-energy electron irradiation of an ASW pre-covered silicate film. The degree of hydroxylation can be tuned by the irradiation parameters (beam energy, exposure) and the ASW film thickness. The results are consistent with a generally accepted picture that hydroxylation occurs through hydrolysis of siloxane (Si-O-Si) bonds in the silica network. Calculations using density functional theory show that this may happen on Si-O-Si bonds, which are either parallel (i.e., in the topmost silicate layer) or vertical to the film surface (i.e., connecting two silicate layers). In the latter case, the mechanism may additionally involve the reaction with a metal support underneath. The observed vibrational spectra are dominated by terminal silanol groups (ν(OD) band at 2763 cm(-1)) formed by hydrolysis of vertical Si-O-Si linkages. Film dehydroxylation fully occurs only upon heating to very high temperatures (∼ 1200 K) and is accompanied by substantial film restructuring, and even film dewetting upon cycling hydroxylation/dehydroxylation treatment.

  8. Environmentally stable flexible metal-insulator-metal capacitors using zirconium-silicate and hafnium-silicate thin film composite materials as gate dielectrics.

    Science.gov (United States)

    Meena, Jagan Singh; Chu, Min-Ching; Wu, Chung-Shu; Ravipati, Srikanth; Ko, Fu-Hsiang

    2011-08-01

    Fully flexible metal-insulator-metal (MIM) capacitors fabricated on 25 microm thin polyimide (PI) substrates via the surface sol-gel process using 10-nm-thick zirconium-silicate (ZrSixOy) and hafnium-silicate (HfSimOn) films as gate dielectrics. The surface morphology of the ZrSixOy and HfSimOn films were investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free surface growth had occurred on the PI. Both the films treated with oxygen (O2) plasma and annealing (ca. 250 degrees C) consisted of amorphous phase; confirmed by X-ray diffraction. We employed X-ray photoelectron spectroscopy (XPS) at high resolution to examine the chemical composition of the films subjected to various treatment conditions. The shift of the XPS peaks towards higher binding energy revealed the O2 plasma-pretreatment followed by annealing was the most effective process to the surface oxidation at relatively low-temperature, for further passivate the grease traps and making dielectric films thermally stable. The ZrSixOy and HfSimOn films in sandwich-like MIM configuration on the PI substrates exhibited the low leakage current densities of 7.1 x 10(-9) and 8.4 x 10(-9) A/cm2 at applied electric field of 10 MV/cm and maximum capacitance densities of 7.5 and 5.3 fF/microm2 at 1 MHz, respectively. In addition, the ZrSixOy and HfSimOn films in MIM capacitors showed the estimated dielectric constants of 8.2 and 6.0, respectively. Prior to use of flexible MIM capacitors in advanced flexible electronic devices; the reliability test was studied by applying day-dependent leakage current density measurements up to 30 days. These films of silicate-surfactant mesostructured materials have special interest to be used as gate dielectrics in future for flexible metal-oxide-semiconductor devices.

  9. Turbulent mixing of metal and silicate during planet accretion — And interpretation of the Hf-W chronometer

    Science.gov (United States)

    Dahl, Tais W.; Stevenson, David J.

    2010-06-01

    In the current view of planet formation, the final assembly of the Earth involved giant collisions between proto-planets (> 1000 km radius), with the Moon formed as a result of one such impact. At this stage the colliding bodies had likely differentiated into a metallic core surrounded by a silicate mantle. During the Moon-forming impact, nearly all metal sank into the Earth's core. We investigate to what extent large self-gravitating iron cores can mix with surrounding silicate and how this influences the short-lived chronometer, Hf-W, used to infer the age of the Moon. We present fluid dynamical models of turbulent mixing in fully liquid systems, attempting to place constraints on the degree of mixing. Erosion of sinking cores driven by Rayleigh-Taylor instability does lead to intimate mixing and equilibration, but large blobs (> 10 km diameter) do not emulsify entirely. Emulsification is enhanced if most of the accreting metal cores deform into thin structures during descent through the Earth's mantle. Yet, only 1-20% of Earth's core would equilibrate with silicate during Earth's accretion. The initial speed of the impactor is of little importance. We proceed to evaluate the mixing potential for shear instabilities where silicate entrainment across vertical walls causes mixing. The turbulent structure indicates that vortices remain at the largest scale and do not mix to centimeter length scale, where diffusion operates and isotopes can equilibrate. Thus, incomplete emulsification and equilibration of accreting iron cores is likely to occur. The extent of metal-silicate equilibration provides key information for interpretation of siderophile budgets and the timing of core formation using the Hf-W chronometer. The time scale of core formation derived from the Hf-W chronometer is usually tied to the last major metal-silicate re-equilibration, believed to coincide with time of the Moon-forming impact. However, we show that large cores have limited ability to reset

  10. Influence of different oxidants on the band alignment of HfO2 films deposited by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    Fan Ji-Bin; Liu Hong-Xia; Gao Bo; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2012-01-01

    Based on X-ray photoelectron spectroscopy (XPS),influences of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition (ALD) are investigated in this paper.The measured valence band offset (VBO) value for H2O-based HfO2 increases from 3.17 eV to 3.32 eV after annealing,whereas the VBO value for O3-based HfO2 decreases from 3.57 eV to 3.46 eV.The research results indicate that the silicate layer changes in different ways for H2O-based and O3-based HfO2 films after the annealing process,which plays a key role in generating the internal electric field formed by the dipoles.The variations of the dipoles at the interface between the HfO2 and SiO2 after annealing may lead the VBO values of H2O-based and O3-based HfO2 to vary in different ways,which fits with the variation of fiat band (VFB) voltage.

  11. Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

    Science.gov (United States)

    Nishimura, Tomonori; Xu, Lun; Shibayama, Shigehisa; Yajima, Takeaki; Migita, Shinji; Toriumi, Akira

    2016-08-01

    We report on the impact of TiN interfaces on the ferroelectricity of nondoped HfO2. Ferroelectric properties of nondoped HfO2 in TiN/HfO2/TiN stacks are shown in capacitance-voltage and polarization-voltage characteristics. The Curie temperature is also estimated to be around 500 °C. The ferroelectricity of nondoped HfO2 clearly appears by thinning HfO2 film down to ˜35 nm. We directly revealed in thermal treatments that the ferroelectric HfO2 film on TiN was maintained by covering the top surface of HfO2 with TiN, while it was followed by a phase transition to the paraelectric phase in the case of the open surface of HfO2. Thus, it is concluded that the ferroelectricity in nondoped HfO2 in this study was mainly driven by both of top and bottom TiN interfaces.

  12. Microstructure optimization and optical and interfacial properties modulation of sputtering-derived HfO{sub 2} thin films by TiO{sub 2} incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.W. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); He, G., E-mail: ganghe01@issp.ac.cn [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Zhou, L. [Department of Pharmacy, The First Affiliated Hospital of Anhui University of Chinese Medicine, Hefei 230031 (China); Chen, H.S. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.S. [National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Chen, X.F.; Deng, B. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China); Lv, J.G. [Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061 (China); Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials and Devices Lab, Anhui University, Hefei 230601 (China)

    2014-10-25

    Highlights: • Sputtering-derived Hf{sub 1−x}Ti{sub x}O{sub 2} gate dielectrics have been deposited on Si substrates. • Increase in crystallization temperature and reduction in E{sub g} have been observed. • Formation of silicate layer for 9% TiO{sub 2}-doped HfO{sub 2}/Si sample has been detected. - Abstract: TiO{sub 2}-doped HfO{sub 2} gate dielectric thin films have been deposited on Si(1 0 0) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf{sub 1−x}Ti{sub x}O{sub 2} films related to TiO{sub 2} concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy–Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (α), and optical band gap (E{sub g}) have been determined precisely. Measurements from XRD have confirmed that TiO{sub 2} incorporating into HfO{sub 2} films leads to the increase of the crystallization temperature of HfO{sub 2} films with increasing the TiO{sub 2} concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO{sub 2} component in Hf{sub 1−x}Ti{sub x}O{sub 2} films. The increase in Urbach parameter E{sub U} with the increase of TiO{sub 2} concentration also suggests the rise in disorder for Hf{sub 1−x}Ti{sub x}O{sub 2} films. FTIR measurements for Hf{sub 1−x}Ti{sub x}O{sub 2}/Si gate stack indicate the existence of the interfacial layer regardless of the TiO{sub 2} concentration. For the 9% TiO{sub 2}-doped HfO{sub 2} samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO{sub 2} component in Hf{sub 1

  13. The effect of Cu doping concentration on resistive switching of HfO{sub 2} film

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Tingting; Tan, Tingting, E-mail: tantt@nwpu.edu.cn; Liu, Zhengtang

    2015-10-01

    Graphical abstract: - Highlights: • The Cu doped and undoped HfO{sub 2} films were fabricated. • The improved RS behaviors were observed for Cu doped HfO{sub 2} film with BRS. • The 9.7% doped HfO{sub 2}:Cu film showed both BRS and URS behaviors. • The related switching mechanisms were illustrated. - Abstract: The Cu-doped and undoped HfO{sub 2} films were fabricated and the effect of Cu doping concentration on resistive switching (RS) of HfO{sub 2} film was demonstrated. The X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical bonding states of Cu in HfO{sub 2}:Cu film. The improved RS behaviors in terms of ON/OFF ratio and switching parameters were observed for Cu-doped HfO{sub 2} film with bipolar resistive switching (BRS) behavior. With the increase of Cu doping concentration, the 9.7% Cu-doped HfO{sub 2} film showed both BRS and unipolar resistive switching (URS) behaviors with large operating voltages. The space charge limited current (SCLC) effect was proposed to interpret the switching mechanism of HfO{sub 2}:Cu films with BRS behavior and the URS behavior can be explained by the migration of Cu ions.

  14. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

    Science.gov (United States)

    Qiu, X. Y.; Zhang, S. Y.; Zhang, T.; Wang, R. X.; Li, L. T.; Zhang, Y.; Dai, J. Y.

    2016-09-01

    Amorphous Ge-doped HfOx films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOx matrix and the existence of HfSiOx interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104 cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfOx film.

  15. Alginate-magnesium aluminum silicate composite films: effect of film thickness on physical characteristics and permeability.

    Science.gov (United States)

    Pongjanyakul, Thaned; Puttipipatkhachorn, Satit

    2008-01-04

    The different film thicknesses of the sodium alginate-magnesium aluminum silicate (SA-MAS) microcomposite films were prepared by varying volumes of the composite dispersion for casting. Effect of film thickness on thermal behavior, solid-state crystallinity, mechanical properties, water uptake and erosion, and water vapor and drug permeability of the microcomposite films were investigated. The film thickness caused a small change in thermal behavior of the films when tested using DSC and TGA. The crystallinity of the thin films seemed to increase when compared with the thick films. The thin films gave higher tensile strength than the thick films, whereas % elongation of the films was on the contrary resulted in the lower Young's modulus of the films when the film thickness was increased. This was due to the weaker of the film bulk, suggesting that the microscopic matrix structure of the thick films was looser than that of the thin films. Consequently, water uptake and erosion, water vapor permeation and drug diffusion coefficient of the thick films were higher than those of the thin films. The different types of drug on permeability of the films also showed that a positive charge and large molecule of drug, propranolol HCl, had higher lag time and lower diffusion coefficient that acetaminophen, a non-electrolyte and small molecule. This was because of a higher affinity of positive charge drug on MAS in the films. The findings suggest that the evaporation rate of solvent in different volumes of the composite dispersion used in the preparation method could affect crystallinity and strength of the film surface and film bulk of the microcomposite films. This led to a change in water vapor and drug permeability of the films.

  16. Soft Magnetic Thin Films FeCoHfO for High-Frequency Noise Suppression Applications

    Institute of Scientific and Technical Information of China (English)

    LU Guang-Duo; ZHANG Huai-Wu; TANG Xiao-Li

    2010-01-01

    @@ A series of FeCoHfO films were fabricated by dc magnetron reactive sputtering at varying partial pressure of oxygen(Po2)from 0 to 11.7%,and the electrical and magnetic properties of films have been studied.It is shown that optimal Fe43.29 Co19.51 Hf7.49O29.71 films with desired properties can be obtained when the films were prepared under Po2 = 5.1%.

  17. Structural degradation of thin HfO2 film on Ge during the postdeposition annealing

    Science.gov (United States)

    Miyata, Noriyuki; Yasuda, Tetsuji; Abe, Yasuhiro

    2010-05-01

    Securing the thermal robustness of thin hafnium oxide (HfO2) film on the semiconductor surface is an important technical issue in the fabrication of the metal-oxide-semiconductor field-effect transistor devices, as the HfO2-based high-k gate stacks usually undergo high-temperature processes. In this study, the structural development of thin HfO2 film on a Ge surface during postdeposition annealing in an ultrahigh vacuum was examined to explore the origin for the initial degradation of thin HfO2 film. Void nucleation and subsequent two-dimensional void growth take place at 780-840 °C, while the chemical composition of the remaining Hf oxide is virtually stable. Both the void nucleation and growth processes show similar larger activation energy of about 10 eV. Based on the observed manner of void growth and the estimated activation energies, the authors propose that mass transport on the HfO2 surface is responsible for void nucleation in the HfO2 films on Ge. The authors also compare the present results with the previous studies on HfO2/Si structures, and suggest that similar surface process leads to the local Hf silicidation.

  18. Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Duo [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Jia, Tingting; Zheng, Li; Xu, Dawei; Wang, Zhongjian; Xia, Chao; Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2013-07-15

    Plasma enhanced atomic layer deposition (PEALD) method can reduce film growing temperature, and allow in situ plasma treatment. In this work, HfAlO and HfO{sub 2} films were deposited with PEALD at 160 °C. Microstructure analysis showed that both films were amorphous after rapid thermal annealing (RTA) treatment, and HfAlO sample showed better interfacial structure than HfO{sub 2}. X-ray photoelectron spectroscopy (XPS) spectra indicated that main component of the interfacial layer of HfAlO sample was Hf–Si–O and Al–Si–O bonds, the valence band offset value between the HfAlO film and Si substrate was calculated to be 2.5 eV. The dominant leakage current mechanism of the samples was Schottky emission at a low electric field (<1.4 MV/cm), and Poole–Frenkel emission mechanism at a higher electric field (>1.4 MV/cm). The equivalent oxide thicknesses (EOT) of the HfAlO samples were 1.0 nm and 1.3 nm, respectively. The density of interface states between dielectric and substrate were calculated to be 1.2 × 10{sup 12} eV{sup −1}cm{sup −2} and 1.3 × 10{sup 12} eV{sup −1}cm{sup −2}, respectively. In comparison with HfO{sub 2} film, HfAlO film has good interfacial structure and electrical performance.

  19. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H.Y. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Nanjing University of Posts and Telecommunications, School of Tongda, Nanjing (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); He, H.J.; Zhang, Z.; Jin, C.G.; Yang, Y.; Wang, Y.Y.; Ye, C. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Zhuge, L.J. [Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Soochow University, Analysis and Testing Center, Suzhou (China); Wu, X.M. [Soochow University, College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Suzhou (China); Soochow University, Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou (China); Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai (China)

    2015-01-23

    HfErO films are deposited on Si substrates by simultaneous radio frequency (RF) and very high frequency (VHF) magnetron sputtering technique. The content of the doped ingredient of Er and the body composition of HfO{sub x} are, respectively, controlled through the VHF and RF powers. Low content of Er doping in the HfErO films can be achieved, because the VHF source of 27.12 MHz has higher ion energy and lower ion flux than the RF source resulting in low sputtering rate in the magnetron sputtering system. The structure, optical properties and thermal stability of the HfErO films are investigated in this work. Results show that the doped content of Er is independently controlled by the VHF power. The oxygen vacancies are created by the Er incorporation. The hafnium in the HfErO films forms mixed valence of Hf{sup 2+} and Hf{sup 4+}. The HfErO films are composed with the structures of HfO{sub 2}, HfO and ErO{sub x}, which can be optimized through the VHF power. At high VHF power, the Hf-Er-O bonds are formed, which demonstrates that the Er atoms are doped into the lattice of HfO{sub 2} in the HfErO films. The HfErO films have bad thermal stability as the crystallization temperature decreases from 900 to 800 C. After thermal annealing, cubic phase of HfO{sub 2} are stabilized, which is ascribed to the oxygen vacancies creation by the Er incorporation. The optical properties such as the refractive index and the optical band gap of the HfErO films are optimized by the VHF power. (orig.)

  20. Finite size effect of proton-conductivity of amorphous silicate thin films based on mesoscopic fluctuation of glass network.

    Science.gov (United States)

    Aoki, Yoshitaka; Habazaki, Hiroki; Nagata, Shinji; Nakao, Aiko; Kunitake, Toyoki; Yamaguchi, Shu

    2011-03-16

    The finite size effect of proton conductivity of amorphous silicate thin films, a-M(0.1)Si(0.9)O(x) (M = Al, Ga, Hf, Ti, Ta, and La), was investigated. The proton conductivity across films, σ, was measured in dry air by changing the thickness in the range of 10-1000 nm. σ of the films with M = Al, Ga, and Ta was elevated in a power law by decreasing thickness into less than a few hundred nanometers, and the increment was saturated at a thickness of several 10's of nanometers. On the other hand, σ of the films with M = Hf, Ti, and La was not related to the decrease of the thickness in the range of >10 nm. Thickness-dependent conductivity of the former could be numerically simulated by a percolative resistor network model that involves the randomly distributed array of two kinds of resistors R(1) and R(2) (R(1) > R(2)) in the form of a simple cubic-type lattice. High-resolution TEM clarified that a-M(0.1)Si(0.9)O(x) films involved heterogeneous microstructures made of the condensed domain and the surrounding uncondensed matrix due to the fluctuation of glass networks on the nanometer scale. The condensed domain had a wormlike shape with an average length of several 10's of nanometers and performed the role of the proton conduction pathway penetrating through the poorly conducting matrix. It was concluded that the thickness-dependent conductivity could be identical to finite-size scaling of the percolative network of the interconnected domains in the nanometer range.

  1. The atomic structure and chemical composition of HfOx (x < 2) films prepared by ion-beam sputtering deposition

    Science.gov (United States)

    Aliev, V. S.; Gerasimova, A. K.; Kruchinin, V. N.; Gritsenko, V. A.; Prosvirin, I. P.; Badmaeva, I. A.

    2016-08-01

    Non-stoichiometric HfOx films of different chemical composition (x partial pressure in a chamber. An effect of chemical composition on the atomic structure of the films was studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy and field emission scanning electron microscopy methods. The films were found to be amorphous, consisting only of three components: Hf-metal clusters, Hf4O7 suboxide and stoichiometric HfO2. The relative concentration of these components varies with changing x. The surface of the films contains the increased oxygen content compared to the bulk. It was found that the Hf4O7 suboxide concentration is maximal at x = 1.8. The concept of hafnium oxide film growth by the IBSD method is proposed to explain the lack of suboxides variety in the films and the instability of HfO2, when annealed at high temperature.

  2. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.

    Science.gov (United States)

    Chernikova, Anna; Kozodaev, Maksim; Markeev, Andrei; Negrov, Dmitrii; Spiridonov, Maksim; Zarubin, Sergei; Bak, Ohheum; Buragohain, Pratyush; Lu, Haidong; Suvorova, Elena; Gruverman, Alexei; Zenkevich, Andrei

    2016-03-23

    Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions.

  3. Mixed Al and Si doping in ferroelectric HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Chung, Ching-Chang; Moghaddam, Saeed; Jones, Jacob L.; Nishida, Toshikazu

    2015-12-01

    Ferroelectric HfO2 thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO2 greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ˜20 μC/cm2 and a coercive field strength of ˜1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO2 thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO2 thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO2 thin films exhibit a remanent polarization greater than 15 μC/cm2 up to 108 cycles.

  4. Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Takmeel, Qanit [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Zhou, Chuanzhen [Analytical Instrumentation Center, College of Engineering at North Carolina State University, Raleigh, North Carolina 27696 (United States); Chung, Ching-Chang; Jones, Jacob L. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)

    2015-12-14

    Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{sub 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.

  5. Thermal evolution of CaO-doped HfO{sub 2} films and powders

    Energy Technology Data Exchange (ETDEWEB)

    Barolin, S A; Sanctis, O A de [Lab. Materiales Ceramicos, FCEIyA, Universidad Nacional de Rosario, IFIR-CONICET (Argentina); Caracoche, M C; Martinez, J A; Taylor, M A; Pasquevich, A F [Departamento de Fisica, FCE, Universidad Nacional de La Plata, IFLP-CONICET (Argentina); Rivas, P C, E-mail: oski@fceia.unr.edu.a [Facultad de Ciencias Agronomicas y Forestales, Universidad Nacional de La Plata, IFLP (Argentina)

    2009-05-01

    Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SOFC because both are oxygen-ion conductors. The main challenge for these compounds is to reduce the relatively high value of the activation energies vacancies diffusion, which is influenced by several factors. In this work the thermal evolution of CaO-HfO{sub 2} materials have been investigated. (CaO)y-Hf(1-y)O(2-y) (y = 0.06, 0.14 y 0.2) coatings and powders were synthesized by chemical solution deposition (CSD). Films were deposited onto alumina substrates by Dip Coating technique, the burning of organic waste was carried out at 500 deg. C under normal atmosphere and then the films were thermally treated at intervals of temperature rising to a maximum temperature of 1250 deg. C. By means Glazing Incidence X-ray Diffraction (rho-2theta configuration) the phases were studied in the annealed films. On the other hand, the thermal evolution and crystallization process of powders were analyzed in-situ by HT-XRD. The phenomena crystallization occurred in films and powders were analyzed. The activation energies of diffusion of oxygen vacancies of HfO2-14 mole% CaO and HfO2-20 mole% CaO films were measured from the thermal evolution of the relaxation constant measured by Perturbed Angular Correlation Technique.

  6. Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

    Science.gov (United States)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Funakubo, Hiroshi

    2015-07-01

    YO1.5-substituted HfO2 thin films with various substitution amounts were grown on (100) YSZ substrates by the pulsed laser deposition method directly from the vapor phase. The epitaxial growth of film with different YO1.5 amounts was confirmed by the X-ray diffraction method. Wide-area reciprocal lattice mapping measurements were performed to clarify the crystal symmetry of films. The formed phases changed from low-symmetry monoclinic baddeleyite to high-symmetry tetragonal/cubic fluorite phases through an orthorhombic phase as the YO1.5 amount increased from 0 to 0.15. The additional annular bright-field scanning transmission electron microscopy indicates that the orthorhombic phase has polar structure. This means that the direct growth by vapor is of polar orthorhombic HfO2-based film. Moreover, high-temperature X-ray diffraction measurements showed that the film with a YO1.5 amount of 0.07 with orthorhombic structure at room temperature only exhibited a structural phase transition to tetragonal phase above 450 °C. This temperature is much higher than the reported maximum temperature of 200 °C to obtain ferroelectricity as well as the expected temperature for real device application. The growth of epitaxial orthorhombic HfO2-based film helps clarify the nature of ferroelectricity in HfO2-based films (186 words/200 words).

  7. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    OpenAIRE

    Takao Shimizu; Kiliha Katayama; Takanori Kiguchi; Akihiro Akama; Konno, Toyohiko J.; Osami Sakata; Hiroshi Funakubo

    2016-01-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16...

  8. Effects of Hf incorporation on indium zinc oxide thin-film transistors using solution process

    Science.gov (United States)

    Li, Xifeng; Xin, Enlong; Zhang, Jianhua

    2015-01-01

    Thin-film transistors (TFTs) were fabricated by employing amorphous hafnium indium zinc oxide (HIZO) thin films as the active channel layer by the solution process. Thermogravimetry-differential thermal analysis, transmittance measurements, atomic force microscopy, scanning electron microscopy, x-ray diffraction, and Fourier transform infrared analysis were used to study the formation, structure, and optical properties of the HIZO films. The results showed that the addition of Hf to the IZO system resulted in suppression of carrier generation. The HIZO TFTs exhibited lower off-currents and higher onoff current ratios than IZO TFTs without Hf doping. HIZO TFTs with a Hf doping content of 5 at. % obtained a threshold voltage of 3.7 V, a mobility of 0.27 cm2 V-1 s-1, a subthreshold swing of 1.2 V/dec, and an on-off current ratio of 106.

  9. On the structural origins of ferroelectricity in HfO2 thin films

    Science.gov (United States)

    Sang, Xiahan; Grimley, Everett D.; Schenk, Tony; Schroeder, Uwe; LeBeau, James M.

    2015-04-01

    Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.

  10. Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

    OpenAIRE

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films ...

  11. Molecular beam epitaxy of thin HfTe2 semimetal films

    Science.gov (United States)

    Aminalragia-Giamini, S.; Marquez-Velasco, J.; Tsipas, P.; Tsoutsou, D.; Renaud, G.; Dimoulas, A.

    2017-03-01

    Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure calculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center, providing evidence that HfTe2/AlN is an epitaxial topological Dirac semimetal.

  12. Influences of Annealing on Residual Stress and Structure of HfO2 Films

    Institute of Scientific and Technical Information of China (English)

    SHEN Yan-Ming; SHAO Shu-Ying; DENG Zhen-Xia; HE Hong-Bo; SHAO Jian-Da; FAN Zheng-Xiu

    2007-01-01

    HfO2 films are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100℃ and 400℃ on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.

  13. Study of artificial lattice Hf/Ni multilayer film using slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Nakajyo, Terunobu; Tashiro, Mutsumi; Asahino, Takashi; Murashige, Yusuke; Kanazawa, Ikuzo [Tokyo Gakugei Univ., Koganei (Japan); Jo, Yoshitaka; Yamamoto, Ryoichi; Ito, Yasuo

    1995-12-01

    The controlled metal multilayer film has been studied by slow positron beam and TDPAC. Hf monolayer film and Hf/Ni multilayer film were prepared. When a positron injects the sample, it is radically thermolized through the inelastic scattering. If the distribution of positron under the above conditions is represented by the depth function, it is expected usually by Makhov function. But Ghosh and Aers have investigated the implantation profile P(z,E) using Monte Carlo simulation and recently they study various kinds of monolayer and multilayer film by use of the implantation profile in the consideration of the scattering effects of positron in the interface of films. Two methods, the usual and the new method, were compared with each other in this paper. In the case of Hf 500 nm and Ni 1000 nm, the theoretical and the experimental values were agreed. On multilayer film, both values were agreed using new P(z,E) in consideration of scattering effect, but not agreed by usual P(z,E) and new P(z,E) neglected the scattering effect. To analyze the multilayer film, the scattering effect has to be considered and, moreover, the effect of nonthermalized positron is necessary to take into account near surface. (M.N.)

  14. Optical characteristics of H{sub 2}O-based and O{sub 3}-based HfO{sub 2} films deposited by ALD using spectroscopy ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Xiaojiao; Liu, Hongxia; Zhong, Bo; Fei, Chenxi; Wang, Xing; Wang, Qianqiong [Xidian University, School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi' an (China)

    2015-06-15

    Optical properties of thin atomic layer-deposited HfO{sub 2} films grown by H{sub 2}O and O{sub 3} are analyzed by variable angle spectroscopic ellipsometry. By investigating the dielectric constant, it is found that a higher real part of the dielectric constant (ε {sub 1}) value is observed for H{sub 2}O-based film due to less silicate component in the film. Careful examination of the log scale of imaginary part of the dielectric constant (ε {sub 2}) leads to the conclusion that the absorption features in the energy range of 3.2-5.35 eV originate from the interface layer between the silicon substrate and the native oxide. In particular, O{sub 3}-based gate stacks have less sub-band gap defect states besides the silicon's critical features. Moreover, a larger high-frequency dielectric constant, direct and indirect band gap values are obtained for O{sub 3}-based film. Meanwhile, suitable valence band offsets (3.38 and 3.55 eV) and conduction band offsets (1.58 and 1.47 eV) are obtained for H{sub 2}O- and O{sub 3}-based HfO{sub 2} gate stacks, respectively, indicating both type of dielectric films can provide sufficient tunneling barriers for both electrons and holes. (orig.)

  15. Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    Fan Ji-Bin; Liu Hong-Xia; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2013-01-01

    A comparative study of two kinds of oxidants (H2O and O3) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlOx) films is carried out.The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied.The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled,which has significant effects on the dielectric constant,valence band,electrical properties,and stability of HfAlOx film.Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated.

  16. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    Science.gov (United States)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K. K.; Srivastava, Ritu; Singh, P. K.

    2015-12-01

    Hafnium oxide (HfO2) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (Dit) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  17. HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

    Science.gov (United States)

    Yue, Ruoyu; Barton, Adam T; Zhu, Hui; Azcatl, Angelica; Pena, Luis F; Wang, Jian; Peng, Xin; Lu, Ning; Cheng, Lanxia; Addou, Rafik; McDonnell, Stephen; Colombo, Luigi; Hsu, Julia W P; Kim, Jiyoung; Kim, Moon J; Wallace, Robert M; Hinkle, Christopher L

    2015-01-27

    In this work, we demonstrate the growth of HfSe2 thin films using molecular beam epitaxy. The relaxed growth criteria have allowed us to demonstrate layered, crystalline growth without misfit dislocations on other 2D substrates such as highly ordered pyrolytic graphite and MoS2. The HfSe2 thin films exhibit an atomically sharp interface with the substrates used, followed by flat, 2D layers with octahedral (1T) coordination. The resulting HfSe2 is slightly n-type with an indirect band gap of ∼ 1.1 eV and a measured energy band alignment significantly different from recent DFT calculations. These results demonstrate the feasibility and significant potential of fabricating 2D material based heterostructures with tunable band alignments for a variety of nanoelectronic and optoelectronic applications.

  18. Crystal structure and band gap determination of HfO2 thin films

    NARCIS (Netherlands)

    Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

    2007-01-01

    Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

  19. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    Science.gov (United States)

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

  20. Characterization of chitosan-magnesium aluminum silicate nanocomposite films for buccal delivery of nicotine

    DEFF Research Database (Denmark)

    Pongjanyakul, Thaned; Khunawattanakul, Wanwisa; Strachan, Clare J

    2013-01-01

    The objective of this study was to prepare and characterize chitosan-magnesium aluminum silicate (CS-MAS) nanocomposite films as a buccal delivery system for nicotine (NCT). The effects of the CS-MAS ratio on the physicochemical properties, release and permeation, as well as on the mucoadhesive...

  1. Effects of Hf Incorporation on Negative Bias-Illumination Stress Stability in Hf-In-Zn-O Thin-Film Transistors

    Science.gov (United States)

    Kim, Sangwook; Park, Jae Chul; Kim, Dae Hwan; Lee, Jang-Sik

    2013-04-01

    In this study, highly reliable amorphous oxide semiconductor-based thin-film transistors (TFTs) were developed. The Hf concentration was systematically changed in the Hf-incorporated In-Zn-O (HIZO) TFTs, and Hf played an important role in determining the negative bias-illumination instability. The process parameters were optimized in order to obtain HIZO TFTs with an excellent stability. HIZO can be processed on a 6-in. wafer at low temperatures and is almost transparent in the visible range. Thus this material is promising for use in current TFTs as well as future transparent electronic device components with good electrical performance and excellent stability.

  2. Turbulent Mixing of Metal and Silicate during Planet Accretion – and interpretation of the Hf-W chronometer

    DEFF Research Database (Denmark)

    Dahl, Tais Wittchen; Stevenson, David

    2010-01-01

    to the last major metal–silicate re-equilibration, believed to coincide with time of the Moon-forming impact. However, we show that large cores have limited ability to reset the Hf–W systemin the silicate Earth. Excess 182W in bulk silicate Earth is more sensitive to early core formation processes than......In the current view of planet formation, the final assembly of the Earth involved giant collisions between protoplanets (N1000 kmradius), with theMoon formed as a result of one such impact.At this stage the colliding bodies had likely differentiated into a metallic core surrounded by a silicate...... mantle. During the Moon-forming impact, nearly all metal sank into the Earth's core. Weinvestigate towhat extent large self-gravitating iron cores can mix with surrounding silicate and howthis influences the short-lived chronometer, Hf–W, used to infer the age of the Moon. We present fluid dynamical...

  3. A Stray Field Magnetic Resonance Imaging Study of the Drying of Sodium Silicate Films.

    Science.gov (United States)

    Hughes; McDonald; Rhodes; Rockliffe; Smith; Wills

    1996-01-15

    Stray field magnetic resonance imaging (STRAFI) is shown to be highly suited to the study of drying processes in thin films. Sodium silicate films have been chosen as a model system exhibiting many of the properties of film drying in general. Films have been dried, as a function of temperature in the range 22 to 62 degrees C, down to water contents of order 28% by weight, at which stage the film is glassy. The experimental results have been quantitatively analyzed by treating the drying film as a colloidal solution. The results suggest that the localized hydrogen spin-spin relaxation time, and hence the mobility of the water in the films is independent of the drying regime and depends primarily on the local water concentration.

  4. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    Dawei Zhang(张大伟); Shuhai Fan(范树海); Weidong Gao(高卫东); Hongbo He(贺洪波); Yingjian Wang(王英剑); Jianda Shao(邵建达); Zhengxiu Fan(范正修); Haojie Sun(孙浩杰)

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different deposition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  5. Influence of HF acid catalyst concentration on properties of aerogel low-k thin films

    Science.gov (United States)

    Gaikwad, A. S.; Gupta, S. A.; Mahajan, A. M.

    2016-08-01

    The effect of hydrofluoric acid (HF) catalyst concentration in coating solution on chemical, physical and structural properties of silica aerogel thin films was investigated. The aerogel films were synthesized by using a sol-gel spin coating method followed by aging in ethanol and CO2 supercritical drying. The refractive index (RI) is observed to be reduced from 1.32 to 1.13 and porosity percentage increased from 30.21% to 71.64% in accordance with increasing HF concentration. Deposition of silica aerogel was confirmed from Fourier transform infrared spectroscopy measurement. The nanoporous nature of deposited films was confirmed from field effect scanning electron microscopy and observed pore diameter is in the range of 3.33 to 6.69 nm. The nanoporous nature of the film was also validated from atomic force microscopy and root mean square roughness was observed to be increased from 2.31 nm to 3.2 nm with increasing acid catalyst concentration in the coating solution. The calculated dielectric constant from CV measurement of fabricated metal-insulator-semiconductor structure for the silica aerogel formed at 0.8 ml HF concentration is observed to be 1.73. These deposited nanoporous silica aerogel low-k films with lower k value and smaller pore size have application as interlayer dielectric materials to minimize the disadvantages of porous materials.

  6. The effects of layering in ferroelectric Si-doped HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2014-08-01

    Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  7. The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Takmeel, Qanit; Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States); Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696-7907 (United States)

    2014-08-18

    Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  8. Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film

    Directory of Open Access Journals (Sweden)

    H. X. Zhu

    2016-05-01

    Full Text Available A nano-floating gate memory structure based on Ni nanocrystals (NCs embedded HfOx film is deposited by means of radio-frequency magnetron sputtering. Microstructure investigations reveal that self-organized Ni-NCs with diameters of 4-8 nm are well dispersed in amorphous HfOx matrix. Pt/Ni-NCs embedded HfOx/Si/Ag capacitor structures exhibit voltage-dependent capacitance-voltage hysteresis, and a maximum flat-band voltage shift of 1.5 V, corresponding to a charge storage density of 6.0 × 1012 electrons/cm2, is achieved. These capacitor memory cells exhibit good endurance characteristic up to 4 × 104 cycles and excellent retention performance of 105 s, fulfilling the requirements of next generation non-volatile memory devices. Schottky tunneling is proven to be responsible for electrons tunneling in these capacitors.

  9. Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics

    Science.gov (United States)

    Choi, Hyun-Sik; Jeon, Sanghun; Kim, Hojung; Shin, Jaikwang; Kim, Changjung; Chung, U.-In

    2011-10-01

    We evaluated the interface properties of amorphous hafnium-indium-zinc-oxide (a-HIZO) thin-film transistors (TFTs) with respect to various Hf contents. To this end, the subthreshold swing and the low-frequency noise (LFN) of the a-HIZO TFTs were measured and compared. From LFNs providing more accurate information, we quantitatively analyzed the interface trap densities and found that they decrease with increasing Hf contents. Although the acceptor-like tail state densities in bulk channel increase with Hf contents, higher Hf contents show lower threshold voltage shift under bias stress, implying that reliability characteristics of a-HIZO TFTs are more sensitive to interface quality rather than bulk property.

  10. Current Progress of Hf (Zr)-Based High-k Gate Dielectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    With the continued downscaling of complementary metal-oxide-semiconductor field effect transistor dimensions, high-dielectric constant (high-k) gate materials, as alternatives to SiO2, have been extensively investigated. Hf (Zr)-based high-k gate dielectric thin films have been regarded as the most promising candidates for high-k gate dielectric according to the International Technology Roadmap for Semiconductor due to their excellent physical properties and performance. This paper reviews the recent progress on Hf (Zr)-based high-k gate dielectrics based on PVD (physical vapor deposition) process. This article begins with a survey of various methods developed for generating Hf (Zr)-based high-k gate dielectrics, and then mainly focuses on microstructure, synthesis, characterization, formation mechanisms of interfacial layer, and optical properties of Hf (Zr)-based high-k gate dielectrics. Finally, this review concludes with personal perspectives towards future research on Hf (Zr)-based high-k gate dielectrics.

  11. Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application

    Science.gov (United States)

    Firek, Piotr; Wysokiński, Piotr

    2016-12-01

    Hafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O2/N2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (Ra=0.2÷1,0 nm). Thickness of HfOXNY films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage UFB, dielectric constant Ki, interface state trap density Dit and effective charge Qeff. Subsequently, deposited HfOxNy layers were annealed in PDA process (40 min 400 °C 100% N2) after which the electrical characterization was performed again.

  12. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  13. Persistent photoconductivity in Hf-In-Zn-O thin film transistors

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-10-01

    Passivated Hf-In-Zn-O (HIZO) thin film transistors suffer from a negative threshold voltage shift under visible light stress due to persistent photoconductivity (PPC). Ionization of oxygen vacancy sites is identified as the origin of the PPC following observations of its temperature- and wavelength-dependence. This is further corroborated by the photoluminescence spectrum of the HIZO. We also show that the gate voltage can control the decay of PPC in the dark, giving rise to a memory action.

  14. Damping and ferromagnetic resonance linewidth broadening in nanocrystalline soft ferromagnetic Fe-Co-Hf-N films

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material-forschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)], E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material-forschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Kovacs, A. [Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka 5670047 (Japan)

    2008-07-15

    In order to describe high-frequency damping mechanisms of ferromagnetic films by means of the imaginary part of the frequency-dependant permeability, CMOS compatible ferromagnetic Fe{sub 36}Co{sub 44}Hf{sub 9}N{sub 11} films were deposited by reactive r.f. magnetron sputtering on oxidised 5x5 mm{sup 2}x380 {mu}m (1 0 0)-silicon substrates with a 6-in. Fe{sub 38}Co{sub 47}Hf{sub 15} target, as well as magnetic field annealing between 300 and 600 deg. C. An in-plane uniaxial anisotropy of around 4.5 mT as well as an excellent soft magnetic behaviour with a saturation polarisation of approximately 1.4 T could be observed after heat treatment at the above-mentioned temperatures, which drives these films to a high-frequency suitability. Ferromagnetic resonance frequencies of approximately up to 2.4 GHz could be obtained. The frequency-dependant permeability was measured with a broadband permeameter. Depending on the heat treatment, an increase of the full-width at half-maximum (FWHM) of the imaginary part of the frequency-dependant permeability is discussed in terms of two-magnon scattering, anisotropy-type competition and local resonance generation through predominant grain growth causing magnetisation and anisotropy inhomogeneities in the magnetic films. The grain size of the films was determined by (HRTEM) imaging and amounts from a few nanometres for films heat treated at 300 deg. C to more than 10 nm at 600 deg. C where the FWHM {delta}f{sub eff} and the Landau-Lifschitz-Gilbert equation damping parameter {alpha}{sub eff} increases with d{sub nm}{sup 2} and d{sub nm} (e.g. d{sub nm} is the grain diameter of the nonmagnetic Hf-N phase), respectively.

  15. Local structure and local conduction paths in amorphous (In,Ga,Hf)-ZnO semiconductor thin films

    Science.gov (United States)

    Yang, Dong-Seok; Cheol Lee, Jae; Chung, JaeGwan; Lee, Eunha; Anass, Benayad; Sung, Nark-Eon; Min Lee, Jay; Jae Kang, Hee

    2012-10-01

    The local structure and local conduction paths of Ga-In-Zn-O (GIZO) and Hf-In-Zn-O (HIZO) amorphous thin films were investigated by the extended X-ray absorption fine structure (EXAFS). We found that the local hindrance paths of In-Ga and In-Hf exist in the conduction paths of amorphous GIZO and HIZO semiconductor thin films, respectively.

  16. Quantitative analysis of major and trace elements in NH4HF2-modified silicate rock powders by laser ablation - inductively coupled plasma mass spectrometry.

    Science.gov (United States)

    Zhang, Wen; Hu, Zhaochu; Liu, Yongsheng; Yang, Wenwu; Chen, Haihong; Hu, Shenghong; Xiao, Hongyan

    2017-08-29

    In this paper, we described a NH4HF2 digestion method as sample preparation for the rapid determination of major and trace elements in silicate rocks using laser ablation-inductively coupled plasma mass spectrometry (LA-ICP-MS). Sample powders digested by NH4HF2 at 230 °C for 3 h form ultrafine powders with a typical grain size d80 rocks have a consistent grain morphology and size, allowing us to produce pressed powder pellets that have excellent cohesion and homogeneity suitable for laser ablation micro-analysis without the addition of binder. The influences of the digestion parameters were investigated and optimized, including the evaporation stage of removing residual NH4HF2, sample homogenization, selection of the digestion vessel and calibration strategy of quantitative analysis. The optimized NH4HF2 digestion method was applied to dissolve six silicate rock reference materials (BCR-2, BHVO-2, AGV-2, RGM-2, GSP-2, GSR-1) covering a wide range of rock types. Ten major elements and thirty-five trace elements were simultaneously analyzed by LA-ICP-MS. The analytical results of the six reference materials generally agreed with the recommended values, with discrepancies of less than 10% for most elements. The analytical precision is within 5% for most major elements and within 10% for most trace elements. Compared with previous methods of LA-ICP-MS bulk analysis, our method enables the complete dissolution of refractory minerals, such as zircon, in intermediate-acidic intrusive rocks and limits contamination as well as the loss of volatile elements. Moreover, there are many advantages for the new technique, including reducing matrix effects between reference materials and samples, spiking the internal standard simply and feasibly and sample batch processing. The applicability filed of the new technique in this study was focused on the whole-rock analysis of igneous rock samples, which are from basic rocks to acid rocks (45% rock analysis. Copyright © 2017

  17. Turbulent Mixing of Metal and Silicate during Planet Accretion – and interpretation of the Hf-W chronometer

    DEFF Research Database (Denmark)

    Dahl, Tais Wittchen; Stevenson, David

    2010-01-01

    In the current view of planet formation, the final assembly of the Earth involved giant collisions between protoplanets (N1000 kmradius), with theMoon formed as a result of one such impact.At this stage the colliding bodies had likely differentiated into a metallic core surrounded by a silicate m...

  18. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO{sub x} films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, X.Y.; Zhang, S.Y.; Zhang, T.; Wang, R.X.; Li, L.T.; Zhang, Y. [Southwest University, School of Physical Science and Technology, Chongqing (China); Dai, J.Y. [The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong (China)

    2016-09-15

    Amorphous Ge-doped HfO{sub x} films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfO{sub x} matrix and the existence of HfSiO{sub x} interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfO{sub x}/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 x 10{sup 4} cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfO{sub x} film. (orig.)

  19. Effect of moisture and chitosan layered silicate on morphology and properties of chitosan/layered silicates films; Efeito do teor de quitosana e do silicato em camadas na morfologia e propriedades dos filmes quitosana/silicatos em camadas

    Energy Technology Data Exchange (ETDEWEB)

    Silva, J.R.M.B. da; Santos, B.F.F. dos; Leite, I.F., E-mail: itamaraf@gmail.com [Universidade Federal da Paraiba (UFPB), PB (Brazil). Centro de Tecnologia. Departamento de Engenharia de Materiais

    2014-07-01

    Thin chitosan films have been for some time an object of practical assessments. However, to obtain biopolymers capable of competing with common polymers a significant improvement in their properties is required. Currently, the technology of obtaining polymer/layered silicates nanocomposites has proven to be a good alternative. This work aims to evaluate the effect of chitosan content (CS) and layered silicates (AN) on the morphology and properties of chitosan/ layered silicate films. CS/AN bionanocomposites were prepared by the intercalation by solution in the proportion 1:1 and 5:1. Then were characterized by infrared spectroscopy (FTIR), diffraction (XRD) and X-ray thermogravimetry (TG). It is expected from the acquisition of films, based on different levels of chitosan and layered silicates, choose the best composition to serve as a matrix for packaging drugs and thus be used for future research. (author)

  20. Thermal evolution of Er silicate thin films grown by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lo Savio, R; Miritello, M; Piro, A M; Grimaldi, M G; Priolo, F [MATIS CNR-INFM and Dipartimento di Fisica e Astronomia dell' Universita di Catania, via Santa Sofia 64, 95123 Catania (Italy); Iacona, F [CNR-IMM, Stradale Primosole 50, 95121 Catania (Italy)], E-mail: roberto.losavio@ct.infn.it

    2008-11-12

    Stoichiometric Er silicate thin films, monosilicate (Er{sub 2}SiO{sub 5}) and disilicate (Er{sub 2}Si{sub 2}O{sub 7}), have been grown on c-Si substrates by rf magnetron sputtering. The influence of annealing temperature in the range 1000-1200 deg. C in oxidizing ambient (O{sub 2}) on the structural and optical properties has been studied. In spite of the known reactivity of rare earth silicates towards silicon, Rutherford backscattering spectrometry shows that undesired chemical reactions between the film and the substrate can be strongly limited by using rapid thermal treatments. Monosilicate and disilicate films crystallize at 1100 and 1200 deg. C, respectively, as shown by x-ray diffraction analysis; the crystalline structures have been identified in both cases. Moreover, photoluminescence (PL) measurements have demonstrated that the highest PL intensity is obtained for Er{sub 2}Si{sub 2}O{sub 7} film annealed at 1200 deg. C. In fact, this treatment allows us to reduce the defect density in the film, in particular by saturating oxygen vacancies, as also confirmed by the increase of the lifetime of the PL signal.

  1. Dual spiral sandwiched magnetic thin film inductor using Fe-Hf-N soft magnetic films as a magnetic core

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.H.; Yoo, D.W.; Jeong, J.H.; Kim, J.; Han, S.H. E-mail: sukhan@kist.re.kr; Kim, H.J

    2002-02-01

    Dual spiral sandwiched magnetic thin film inductors are fabricated using as-deposited Fe-Hf-N soft magnetic thin films. The hard axis of the magnetic film is aligned transverse to the direction of coil conductor current, which is expected to result in high inductance values as well as excellent frequency response. The inductance, Q factor and resistance are measured using impedance analyzer from 1 to 10 MHz. The inductance of fabricated thin film inductors are obtained within the range of 1.1-1.5 {mu}H. Also, the quality factor and coil resistance is obtained in the range of 3-38 at 8 MHz and 1-2.5 {omega}, respectively.

  2. Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

    Science.gov (United States)

    Craciun, D.; Craciun, V.

    2017-04-01

    One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO2. The estimation of the valence band discontinuity (ΔEV) of HfO2/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO2 film deposited on a thick IZO film. A value of ΔEV = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO2 and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔEC = 0.65 ± 0.05 eV in HfO2/IZO heterostructure was then obtained.

  3. Drying and nondrying layer-by-layer assembly for the fabrication of sodium silicate/TiO2 nanoparticle composite films.

    Science.gov (United States)

    Zhang, Lianbin; Liu, He; Zhao, Engui; Qiu, Lingying; Sun, Junqi; Shen, Jiacong

    2012-01-24

    Influences of drying and nondrying steps on structures of layer-by-layer (LbL) assembled sodium silicate/TiO(2) nanoparticles films (donated as silicate/TiO(2) films) have been systematically investigated. The nondrying LbL assembly produces highly porous silicate/TiO(2) films with large thickness. In contrast, the silicate/TiO(2) films fabricated with a drying step after each layer deposition are flat and thin without porous structures. In situ atomic force microscopy (AFM) measurements confirm that the sodium silicate and TiO(2) nanoparticles are deposited in their aggregated forms. A N(2) drying step can disintegrate the aggregated silicate and TiO(2) nanoparticles to produce thin silicate/TiO(2) films with compact structures. Without the drying steps, the aggregated silicate and TiO(2) nanoparticles are well retained, and their LbL assembly produces highly porous silicate/TiO(2) films of large thickness. The highly porous silicate/TiO(2) films are demonstrated to be useful as reusable film adsorbents for dye removal from wastewater because they can adsorb a large amount of cationic organic dyes and decompose them under UV irradiation. The present study is meaningful for exploring drying/nondrying steps for tailoring structure and functions of LbL assembled films.

  4. Quaternary polymethacrylate-magnesium aluminum silicate films: molecular interactions, mechanical properties and tackiness.

    Science.gov (United States)

    Rongthong, Thitiphorn; Sungthongjeen, Srisagul; Siepmann, Juergen; Pongjanyakul, Thaned

    2013-12-15

    The aim of this study was to investigate the impact of the addition of magnesium aluminum silicate (MAS), a natural clay, on the properties of polymeric films based on quaternary polymethacrylates (QPMs). Two commercially available aqueous QPM dispersions were studied: Eudragit(®) RS 30D and Eudragit(®) RL 30D (the dry copolymers containing 5 and 10% quaternary ammonium groups, respectively). The composite QPM-MAS films were prepared by casting. Importantly, QPM interacted with MAS and formed small flocculates prior to film formation. Continuous films were obtained up to MAS contents of 19% (referred to the QPM dry mass). ATR-FTIR and PXRD revealed that the positively charged quaternary ammonium groups of QPM interacted with negatively charged SiO(-) groups of MAS, creating nanocomposite materials. This interaction led to improved thermal stability of the composite films. The puncture strength and elongation at break of dry systems decreased with increasing MAS content. In contrast, the puncture strength of the wet QPM-MAS films (upon exposure to acidic or neutral media) increased with increasing MAS content. Furthermore, incorporation of MAS into QPM films significantly decreased the latter's tackiness in the dry and wet state. These findings suggest that nanocomposite formation between QPM and MAS in the systems can enhance the strength of wet films and decrease their tackiness. Thus, MAS offers an interesting potential as novel anti-tacking agent for QPM coatings.

  5. Oxygen engineering of HfO{sub 2-x} thin films grown by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU-Darmstadt (Germany); Zaumseil, Peter; Schroeder, Thomas [IHP, Frankfurt, Oder (Germany)

    2010-07-01

    Reactive molecular beam epitaxy (R-MBE) is an ideal tool for tailoring physical properties of thin films to specific needs. For the development of cutting-edge oxides for thin film applications a precise control of oxygen defects is crucial. R-MBE in combination with rf-activated oxygen allows reproducibly growing oxide thin films with precise oxidation conditions enabling oxygen engineering. R-MBE was used to grow Hf and HfO{sub 2{+-}}{sub x} thin films with different oxidation conditions on sapphire single crystal substrates. Structural characterization was carried out using rotating anode x-ray diffraction revealing highly textured to epitaxial thin films on c-cut sapphire. Furthermore, switching of film orientation by varying the oxidation conditions was observed demonstrating the role of oxygen in the growth procedure. The investigation of electrical properties using a four probe measurement setup showed conductivities in the range of 1000 {mu}{omega}cm for oxygen deficient HfO{sub 2-x} thin films. Optical properties were investigated using a photospectrometer and additionally x-ray photoelectron spectroscopy was carried out to study the band gap and valence states. Both techniques were used to monitor the oxygen content in deficient HfO{sub 2-x} thin films. Our results demonstrate the importance of oxygen engineering even in the case of 'simple' oxides.

  6. Study on absorbance and laser damage threshold of HfO2 films prepared by ion-assisted reaction deposition

    Institute of Scientific and Technical Information of China (English)

    张大伟; 范树海; 高卫东; 贺洪波; 王英剑; 邵建达; 范正修; 孙浩杰

    2004-01-01

    Using a new kind of EH1000 ion source, hafnium dioxide (HfO2) films are deposited with different depo sition techniques and different conditions. The absorbance and the laser damage threshold of these films have been measured and studied. By comparing these characteristics, one can conclude that under right conditions, such as high partial pressure of oxygen and right kind of ion source, the ion-assisted reaction deposition can prepare HfO2 films with higher laser induced damage threshold.

  7. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

    Science.gov (United States)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-09-01

    Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In2O3 (ITO) as bottom electrodes. The XRD measurements for epitaxial film enabled us to investigate its detailed crystal structure including orientations of the film. The ferroelectricity was confirmed by electric displacement filed – electric filed hysteresis measurement, which revealed saturated polarization of 16 μC/cm2. Estimated spontaneous polarization based on the obtained saturation polarization and the crystal structure analysis was 45 μC/cm2. This value is the first experimental estimations of the spontaneous polarization and is in good agreement with the theoretical value from first principle calculation. Curie temperature was also estimated to be about 450 °C. This study strongly suggests that the HfO2-based materials are promising for various ferroelectric applications because of their comparable ferroelectric properties including polarization and Curie temperature to conventional ferroelectric materials together with the reported excellent scalability in thickness and compatibility with practical manufacturing processes.

  8. Impact of lanthanum on the modification of HfO2 films structure

    Institute of Scientific and Technical Information of China (English)

    T. P. Smirnova; L.V. Yakovkina; V.O. Borisov

    2015-01-01

    LaxHf1–xOy thin films with various concentrations of La, homogeneous and nonhomogeneous distributions of elements throughout the films thickness was purposefully grown by CVD. The composition of the films and their chemical structures were characterized throughout the films thickness by X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectrometry (EDXA). A full picture of the film crystallinity was provided by the combination of grazing incidence X-ray diffraction (GIXRD) synchrotron radiation (SR) and high resolution transmission electron microscopy (HR TEM). It was shown that La acted as “molar volume modulator” and stabilized the nonequilibrium atT≤1300 °C cubic phases. The samples with La content in range of 7 at.%films microstructure was revealed.

  9. Characteristics of atomic layer deposition grown HfO{sub 2} films after exposure to plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y.W. [Kookje Electric Korea Co. LTD, 4-2 Chaam-Dong, Chonan-Si, Chungcheongnam-Do (Korea, Republic of)]. E-mail: ywkim@kekorea.co.kr; Roh, Y. [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoo, Ji-Beom [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)]. E-mail: jibyoo@skku.ac.kr; Kim, Hyoungsub [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2007-01-22

    Ultra thin HfO{sub 2} films were grown by the atomic layer deposition (ALD) technique using tetrakismethylethylaminohafnium (Hf[N(CH){sub 3}(C{sub 2}H{sub 5})]{sub 4}) and ozone (O{sub 3}) as the precursors and subsequently exposed to various plasma conditions, i.e., CCP (capacitively coupled plasma) and MMT (modified magnetron typed plasma) in N{sub 2} or N{sub 2}/O{sub 2} ambient. The conventional CCP treatment was not effective in removing the carbon impurities, which were incorporated during the ALD process, from the HfO{sub 2} films. However, according to the X-ray photoelectron spectroscopy measurements, the MMT treated films exhibited a significant reduction in their carbon contents and the efficient incorporation of nitrogen atoms. Although the incorporated nitrogen was easily released during the post-thermal annealing of the MMT treated samples, it was more effective than the CCP treatment in removing the film impurities. Consequently, the MMT treated samples exhibited excellent electrical properties as compared to the as-deposited HfO{sub 2} films, including negligible hysteresis (flatband voltage shift), a low leakage current, and the reduced equivalent oxide thickness of the gate stack. In conclusion, MMT post treatment is more effective than conventional CCP treatment in improving the electrical properties of high-k films by reducing the carbon contamination and densifying the as-deposited defective films.

  10. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

    Science.gov (United States)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-04-01

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO1.5-0.93HfO2 films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal-orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO2-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O3 and BiFeO3.

  11. Fabrication of resistive switching memory based on solution processed PMMA-HfO x blended thin films

    Science.gov (United States)

    Lee, Jae-Won; Cho, Won-Ju

    2017-02-01

    In this study, we developed PMMA-HfO x blended resistive random access memory (ReRAM) devices using solution processing to overcome the drawbacks of the individual organic and inorganic materials. Resistive switching behaviors of solution-processed PMMA, PMMA-HfO x , and HfO x film-based ReRAM devices were investigated. The poor electrical characteristic of PMMA and brittle mechanical properties of HfO x can be improved by blending PMMA and HfO x together. The PMMA-HfO x blended ReRAM device exhibited a larger memory window, stable endurance and retention, a lower operation power, and better set/reset voltage distributions. Furthermore, these new systems featured multilevel conduction states at different reset bias for non-volatile multilevel memory applications. Therefore, solution-processed PMMA-HfO x blended films are a promising material for non-volatile memory devices on flexible or wearable electronic systems.

  12. Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films.

    Science.gov (United States)

    Pothiraja, Ramasamy; Milanov, Andrian P; Barreca, Davide; Gasparotto, Alberto; Becker, Hans-Werner; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-04-21

    Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(iv) [Hf((i)PrNC(O)O(i)Pr)(4)] () and tetrakis-N,N,N'-trialkylureato hafnium(iv) [Hf((i)PrNC(O)N-(Me)Et)(4)] (), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO(2) thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.

  13. The effect of Gd doping on the atomic and electronic structure of HfO2 thin films.

    Science.gov (United States)

    Ketsman, Ihor; Sokolov, Andrei; Belashchenko, Kirill; Dowben, Peter; Losovyj, Yaroslav; Tang, Jinke; Wang, Zhenjun

    2008-03-01

    HfO2 is a promising oxide for many applications, including high-k gate dielectric for CMOS devices. In addition, Gd-doped HfO2 could lead to a dilute magnetic semiconductor and provide an efficient neutron detection medium due to huge neutron absorption cross section of Gd. Gd-doped HfO2 films deposited on both p-type and n-type silicon by PLD retain monoclinic phase at small doping levels, but can be stabilized in fluorite phase by increased doping [1]. At small doping levels, photoemission measurements indicate n-type character of the films as a result of overcompensation with oxygen vacancies. Depending on a doping level, the films form heterojunctions with good rectifying properties on n- or p-type silicon. Preliminary results show the potential ability of the formed diode structures to detect neutrons. [1] Ya.B.Losovyj, I.Ketsman et al.,APL, 91, 132908, (2007)

  14. Thermoluminescence in films of HfO{sub 2}:Dy{sup +3}; Termoluminiscencia en peliculas de HfO{sub 2}:Dy{sup +3}

    Energy Technology Data Exchange (ETDEWEB)

    Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Azorin, J. [Universidad Autonoma Metropolitana, Unidad Iztapalapa, San Rafael Atlixco 186, Col. Vicentina, 09340 Mexico D. F. (Mexico); Paredes, L., E-mail: victceronr@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2014-08-15

    In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO{sub 2}:Dy{sup +3}) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm{sup 2}-s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm{sup 2}), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO{sub 2}:Dy{sup +3} could be used as radiation monitor in the region of the near UV. (Author)

  15. Synthesis and photoluminescence property of silicon carbide nanowires thin film by HF-PECVD system

    Indian Academy of Sciences (India)

    Zhang Enlei; Wang Guosheng; Long Xiaozhu; Wang Zhumin

    2014-10-01

    A sample and scalable synthetic strategy was developed for the fabrication of nanocrystalline SiC (nc-SiC) thin film. Thin sheet of nanocrystalline diamond was deposited on Si substrate by hot filamentassisted plasma-enhanced chemical vapour deposition system (HF-PECVD). Further, the resulting carbonbased sheet was heated at 1200 °C to allow a solid state reaction between C and Si substrate to form the SiC thin films. The synthesized films mainly consist of -SiC nanowires with diameters of about 50 nm and tens of micrometers long. The nanowires axes lie along the [1 1 1] direction and possess a high density of planar defects. The -SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of 400 nm, which is significantly shifted to the blue compared with the reported PL results of SiC materials. The blue shift may be ascribed to morphology, quantum size confinement effects of the nanomaterials and abundant structure defects that existed in the nanowires.

  16. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  17. Ferromagnetic resonance of Co sub 1 sub 0 sub 0 sub - sub x Hf sub x thin films

    CERN Document Server

    Baek, J S; Lee, S H; Lim, W Y

    1999-01-01

    In order to examine the temperature dependence of the magnetic properties in Co sub 1 sub 0 sub 0 sub - sub x Hf sub x (x=16, 24, 32 at.%) thin films, such as the effective magnetization M sub e sub f sub f , the spectroscopic splitting factor g, the exchange stiffness constant A, and the surface magnetic anisotropy constant K sub s , we carried out ferromagnetic resonance (FMR) experiments in the temperature range of 113 approx 293 K. Spin wave modes, as well as the surface modes, appeared in the Co sub 8 sub 4 Hf sub 1 sub 6 and the Co sub 7 sub 6 Hf sub 2 sub 4 thin films. In the Co sub 6 sub 8 Hf sub 3 sub 2 thin films, however, the spin wave modes appeared only below 233 K. The M sub e sub f sub f and the A increased slightly with decreasing temperature down to 113 K for all samples, but the g were almost constant, regardless of the temperature. The surface magnetic anisotropy constant K sub s sub 1 of the film-air interface and the surface magnetic anisotropy constant K sub s sub 2 of the film-substrate...

  18. Electrical properties of radio-frequency sputtered HfO{sub 2} thin films for advanced CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Pranab Kumar; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics, National Institute of Technology Silchar, Silchar-788010, Assam, India Phone: +91-3842-224879 (India)

    2015-08-28

    The Hafnium oxide (HfO{sub 2}) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO{sub 2} film have been studied employing Al/HfO{sub 2}/p-Si metal–oxide–semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO{sub 2} film is obtained as 23,7.57×1011eV{sup −1} cm{sup −2} and 2.7×10{sup −5} Acm{sup −2}, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

  19. Eggshell- and fur-like microstructures of yttrium silicate film prepared by laser chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ito, Akihiko, E-mail: itonium@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Miyagi (Japan); Endo, Jun; Kimura, Teiichi; Goto, Takashi [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Miyagi (Japan)

    2011-01-01

    Yttrium silicate (Y-Si-O) films with eggshell- and fur-like microstructures were prepared by laser chemical vapor deposition using a Nd:YAG laser, and tetraethyl orthosilicate (TEOS) and yttrium dipivaloylmethane (Y(dpm){sub 3}) precursors. Amorphous Y-Si-O films were prepared at deposition temperature below 1200 K. The crystalline Y-Si-O films with mixtures of Y{sub 4.67}(SiO{sub 4}){sub 3}O and {alpha}-Y{sub 2}Si{sub 2}O{sub 7} phases were obtained at deposition temperature above 1200 K. y-Y{sub 2}Si{sub 2}O{sub 7} and X1-Y{sub 2}SiO{sub 5} minor phases were also formed at a higher deposition temperature. At deposition temperature ranging between 1285 and 1355 K, a dome-like structure covered with fine fur-like projections was formed under a total pressure of 3.5 kPa, whereas an eggshell-like structure 200-300 {mu}m in diameter and 10-20 {mu}m in shell thickness was formed at 7.5 kPa. The deposition rate for the Y-Si-O films with fur- and eggshell-like microstructures reached 300 and 1000 {mu}m h{sup -1}, respectively.

  20. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    KAUST Repository

    Ho, Chih-Hsiang

    2017-06-27

    The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.

  1. Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

    Science.gov (United States)

    Fan, Zhen; Xiao, Juanxiu; Wang, Jingxian; Zhang, Lei; Deng, Jinyu; Liu, Ziyan; Dong, Zhili; Wang, John; Chen, Jingsheng

    2016-06-01

    Ferroelectric properties and ferroelectric resistive switching (FE-RS) of sputtered Hf0.5Zr0.5O2 (HZO) thin films were investigated. The HZO films with the orthorhombic phase were obtained without capping or post-deposition annealing. Ferroelectricity was demonstrated by polarization-voltage (P-V) hysteresis loops measured in a positive-up negative-down manner and piezoresponse force microscopy. However, defects such as oxygen vacancies caused the films to become leaky. The observed ferroelectricity and semiconducting characteristics led to the FE-RS effect. The FE-RS effect may be explained by a polarization modulated trap-assisted tunneling model. Our study not only provides a facile route to develop ferroelectric HfO2-based thin films but also explores their potential applications in FE-RS memories.

  2. Growth and properties of hafnicone and HfO(2)/hafnicone nanolaminate and alloy films using molecular layer deposition techniques.

    Science.gov (United States)

    Lee, Byoung H; Anderson, Virginia R; George, Steven M

    2014-10-08

    Molecular layer deposition (MLD) of the hafnium alkoxide polymer known as "hafnicone" was grown using sequential exposures of tetrakis(dimethylamido) hafnium (TDMAH) and ethylene glycol (EG) as the reactants. In situ quartz crystal microbalance (QCM) experiments demonstrated self-limiting reactions and linear growth versus the number of TDMAH/EG reaction cycles. Ex situ X-ray reflectivity (XRR) analysis confirmed linear growth and measured the density of the hafnicone films. The hafnicone growth rates were temperature-dependent and decreased from 1.2 Å per cycle at 105 °C to 0.4 Å per cycle at 205 °C. The measured density was ∼3.0 g/cm(3) for the hafnicone films at all temperatures. Transmission electron microscopy images revealed very uniform and conformal hafnicone films. The XRR studies also showed that the hafnicone films were very stable with time. Nanoindentation measurements determined that the elastic modulus and hardness of the hafnicone films were 47 ± 2 and 2.6 ± 0.2 GPa, respectively. HfO2/hafnicone nanolaminate films also were fabricated using HfO2 atomic layer deposition (ALD) and hafnicone MLD at 145 °C. The in situ QCM measurements revealed that HfO2 ALD nucleation on the hafnicone MLD surface required at least 18 TDMAH/H2O cycles. Hafnicone alloys were also fabricated by combining HfO2 ALD and hafnicone MLD at 145 °C. The composition of the hafnicone alloy was varied by adjusting the relative number of TDMAH/H2O ALD cycles and TDMAH/EG MLD cycles in the reaction sequence. The electron density changed continuously from 8.2 × 10(23) e(-)/cm(3) for pure hafnicone MLD films to 2.4 × 10(24) e(-)/cm(3) for pure HfO2 ALD films. These hafnicone films and the HfO2/hafnicone nanolaminates and alloys may be useful for flexible thin-film devices.

  3. Combinatorial approach to MgHf co-doped AlN thin films for Vibrational Energy Harvesters

    Science.gov (United States)

    Nguyen, H. H.; Oguchi, H.; Kuwano, H.

    2016-11-01

    In this report, we studied MgHf co-doped AlN ((Mg,Hf)xA11-xN) aiming for developing an AlN-based dielectric material with the large piezoelectric coefficient. To rapidly screen the wide range of composition, we applied combinatorial film growth approach. To get continuous composition gradient on a single substrate, films were deposited on Si (100) substrates by sputtering AlN and Mg-Hf targets simultaneously. Crystal structure was investigated by X-ray diffractometer equipped with a two-dimensional detector (2D-XRD). Composition was determined by Energy Dispersive Spectroscopy (EDS). These studies revealed that we successfully covered the widest ever composition range of 0 x x = 0.24, which will lead to the highest enhancement in the piezoelectric coefficient. The results of this study opened the way for high-throughput development of the dielectric materials.

  4. Highly ordered nanotubular film formation on Ti–25Nb–xZr and Ti–25Ta–xHf

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeong-Jae; Byeon, In-Seop [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, & Research Center for Oral Disease Regulation of the Aged, College of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative Sciences and Prosthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, & Research Center for Oral Disease Regulation of the Aged, College of Dentistry, Chosun University, Gwangju (Korea, Republic of)

    2015-12-01

    The purpose of this study was to investigate the highly ordered nanotubular film formation on Ti–25Nb–xZr and Ti–25Ta–xHf, examining the roles of niobium, zirconium, tantalum and hafnium alloying elements. The Ti–25Nb–xZr and Ti–25Ta–xHf ternary alloys contained 0, 7 and 15 wt.% of these alloying elements and were manufactured using a vacuum arc-melting furnace. Cast ingots of the alloys were homogenized in Ar atmosphere at 1050 °C for 2 h, followed by quenching into ice water. Formation of nanotubular films was achieved by an electrochemical method in 1 M H{sub 3}PO{sub 4} + 0.8 wt.% NaF at 30 V and 1 h for the Ti–25Nb–xZr alloys and 2 h for the Ti–25Ta–xHf alloys. Microstructures of the Ti–25Ta–xHf alloys transformed from α″ phase to β phase, changing from a needle-like structure to an equiaxed structure as the Hf content increased. In a similar manner, the needle-like structure of the Ti–25Nb–xZr alloys transformed to an equiaxed structure as the Zr content increased. Highly ordered nanotubes formed on the Ti–25Ta–15Hf and Ti–25Nb–15Zr alloys compared to the other alloys, and the nanotube layer thickness on Ti–25Ta–15Hf and Ti–25Nb–15Zr was greater than for the other alloys. Nanotubes formed on Ti–25Ta–15Hf and Ti–25Nb–15Zr showed two sizes of highly ordered structures. The diameters of the large nanotubes decreased and the diameters of the small nanotubes increased as Zr and Hf contents increased. It was found that the layer thickness, diameter, surface density and growth rate of nanotubes on the Ti–25Ta–xHf and Ti–25Nb–xZr alloys can be controlled by varying the Hf and Zr contents. X-ray diffraction analyses revealed only weak peaks for crystalline anatase or rutile TiO{sub 2} phases from the nanotubes on the Ti–25Nb–xZr and Ti–25Ta–xHf alloys, indicating a largely amorphous condition. - Highlights: • Nanotubular film formation on anodized Ti-25Nb-xZr and Ti-25Ta-xHf (x = 0, 7 and

  5. Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

    Directory of Open Access Journals (Sweden)

    Tae-Jun Ha

    2015-03-01

    Full Text Available Metal-oxide based thin-film transistors (oxide-TFTs are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

  6. Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films

    Science.gov (United States)

    Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; Henry, M. D.; Brumbach, M. T.; Ihlefeld, J. F.

    2017-02-01

    Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm-2 K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, and 1).

  7. Transparent conductive Hf-doped In2O3 thin films by RF sputtering technique at low temperature annealing

    Science.gov (United States)

    Wang, G. H.; Shi, C. Y.; Zhao, L.; Diao, H. W.; Wang, W. J.

    2017-03-01

    Hf-doped In2O3 transparent conductive polycrystalline films (IHFO) were grown at a low substrate temperature by radio frequency magnetron sputtering for the applications of silicon-based solar cell. The effect of argon flow rate on the electrical and optical properties of the films was investigated. Low temperature thermal treatment improved IHFO films properties, with the optimal Hall mobility of 79.6 cm2/Vs and resistivity of 3.76 × 10-4 Ω cm. The average transmittance of the 807 nm thick IHFO films in the range of 300-1500 nm was above 83%. The carrier density was utilized to evaluate the plasma wavelength of IHFO conducting film which was 1.8 μm. The optimized IHFO film was then applied to amorphous silicon germanium thin film solar cells as the contacting layer. Compared to the cell without such a layer, the efficiency was higher by 0.35%.

  8. Structural and optical properties of post-annealed atomic-layer-deposited HfO{sub 2} thin films on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, N.S., E-mail: n.bennett@hw.ac.uk [Nanomaterials Processing Lab., School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Cherkaoui, K. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Wong, C.S. [Nanomaterials Processing Lab., School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); O' Connor, É.; Monaghan, S.; Hurley, P. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Chauhan, L. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); McNally, P.J. [Nanomaterials Processing Lab., School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland)

    2014-10-31

    The effects of post-annealing conditions on solid-phase crystallization of atomic-layer-deposited HfO{sub 2} films grown on GaAs were investigated. Film properties, including crystallinity (preferential crystal orientation and crystallite size), thickness, density, permittivity, optical band gap and chemical composition were monitored as a function of annealing conditions. Following rapid thermal processing (RTP) in nitrogen ambient at temperatures from 325 °C to 625 °C, the initially produced amorphous/partially crystallized HfO{sub 2} films changed into a well-ordered crystalline structure with no detectable interfacial layer between the film and the GaAs substrate. Though HfO{sub 2} properties were predictable and similar to those of HfO{sub 2} on Si for low temperature processing, in the case of annealing at ≥ 475 °C, the thickness of the film was relatively increased compared to that of an as-grown film and displayed unexpected film characteristics. Changes after annealing in the depth profile data related to stoichiometry indicated that As oxide is formed within the HfO{sub 2} film during the RTP. The formation of As oxide in the HfO{sub 2} film, resulting from the underlying substrate, is dissimilar to previously published results which reported the presence of Ga oxide. - Highlights: • We investigated post-annealing on solid-phase crystallization of HfO{sub 2} films on GaAs. • Numerous properties were monitored as a function of annealing conditions. • HfO{sub 2} properties were similar to those of HfO{sub 2} on Si for low temperature processing. • As oxide is formed within the film during post-annealing due to the GaAs. • This is dissimilar to previous results which reported the presence of Ga oxide.

  9. Extended x-ray absorption fine structure measurements on radio frequency magnetron sputtered HfO2 thin films deposited with different oxygen partial pressures.

    Science.gov (United States)

    Maidul Haque, S; Nayak, C; Bhattacharyya, Dibyendu; Jha, S N; Sahoo, N K

    2016-03-20

    Two sets of HfO2 thin film have been deposited by the radio frequency magnetron sputtering technique at various oxygen partial pressures, one set without any substrate bias and another set with a 50 W pulsed dc substrate bias. The films have been characterized by extended x-ray absorption fine structure (EXAFS) measurements at the Hf L3 edge, and the structural information obtained from analysis of the EXAFS data has been used to explain the macroscopic behavior of the refractive index obtained from spectroscopic ellipsometry measurements. It has been observed that the variation of refractive index with oxygen partial pressure depends on the Hf-Hf bond length for the set of films deposited without substrate bias, while for the other set of films deposited with pulsed dc substrate bias, it depends on the oxygen coordination of the nearest neighbor shell surrounding Hf sites.

  10. Magma mixing and the generation of isotopically juvenile silicic magma at Yellowstone caldera inferred from coupling 238U–230Th ages with trace elements and Hf and O isotopes in zircon and Pb isotopes in sanidine

    Science.gov (United States)

    Stelten, Mark E.; Cooper, Kari M.; Vazquez, Jorge A.; Reid, Mary R.; Barfod, Gry H.; Wimpenny, Josh; Yin, Qing-Zhu

    2013-01-01

    The nature of compositional heterogeneity within large silicic magma bodies has important implications for how silicic reservoirs are assembled and evolve through time. We examine compositional heterogeneity in the youngest (~170 to 70 ka) post-caldera volcanism at Yellowstone caldera, the Central Plateau Member (CPM) rhyolites, as a case study. We compare 238U–230Th age, trace-element, and Hf isotopic data from zircons, and major-element, Ba, and Pb isotopic data from sanidines hosted in two CPM rhyolites (Hayden Valley and Solfatara Plateau flows) and one extracaldera rhyolite (Gibbon River flow), all of which erupted near the caldera margin ca. 100 ka. The Hayden Valley flow hosts two zircon populations and one sanidine population that are consistent with residence in the CPM reservoir. The Gibbon River flow hosts one zircon population that is compositionally distinct from Hayden Valley flow zircons. The Solfatara Plateau flow contains multiple sanidine populations and all three zircon populations found in the Hayden Valley and Gibbon River flows, demonstrating that the Solfatara Plateau flow formed by mixing extracaldera magma with the margin of the CPM reservoir. This process highlights the dynamic nature of magmatic interactions at the margins of large silicic reservoirs. More generally, Hf isotopic data from the CPM zircons provide the first direct evidence for isotopically juvenile magmas contributing mass to the youngest post-caldera magmatic system and demonstrate that the sources contributing magma to the CPM reservoir were heterogeneous in 176Hf/177Hf at ca. 100 ka. Thus, the limited compositional variability of CPM glasses reflects homogenization occurring within the CPM reservoir, not a homogeneous source.

  11. Effect of growth rate on crystallization of HfO2 thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.; Rao, S. V. S. Nageswara

    2016-05-01

    Hafnium oxide (HfO2) is the potentially useful dielectric material in both; electronics to replace the conventional SiO2 as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO2 thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film

  12. Enhanced spin Hall ratios by Al and Hf impurities in Pt thin films

    Science.gov (United States)

    Nguyen, Minh-Hai; Zhao, Mengnan; Ralph, Daniel C.; Buhrman, Robert A.

    The spin Hall effect (SHE) in Pt has been reported to be strong and hence promising for spintronic applications. In the intrinsic SHE mechanism, which has been shown to be dominant in Pt, the spin Hall conductivity σSH is constant, dependent only on the band structure of the spin Hall material. The spin Hall ratio θSH =σSH . ρ , on the other hand, should be proportional to the electrical resistivity ρ of the spin Hall layer. This suggests the possibility of enhancing the spin Hall ratio by introducing additional diffusive scattering to increase the electrical resistivity of the spin Hall layer. Our previous work has shown that this could be done by increasing the surface scattering by growing thinner Pt films in contact with higher resistivity materials such as Ta. In this talk, we discuss another approach: to introduce impurities of metals with negligible spin orbit torque into the Pt film. Our PtAl and PtHf alloy samples exhibit strong enhancement of the spin Hall torque efficiency with impurity concentration due to increased electrical resistivity. Supported in part by Samsung Electronics.

  13. High strain rate sensitivity of hardness in quinary Ti-Zr-Hf-Cu-Ni high entropy metallic glass thin films

    Science.gov (United States)

    Zhao, Shaofan; Wang, Haibin; Xiao, Lin; Guo, Nan; Zhao, Delin; Yao, Kefu; Chen, Na

    2017-10-01

    Quinary Ti-Zr-Hf-Cu-Ni high-entropy metallic glass thin films were produced by magnetron sputter deposition. Nanoindentation tests indicate that the deposited film exhibits a relatively large hardness of 10.4±0.6 GPa and a high elastic modulus of 131±11 GPa under the strain rate of 0.5 s-1. Specifically, the strain rate sensitivity of hardness measured for the thin film is 0.05, the highest value reported for metallic glasses so far. Such high strain rate sensitivity of hardness is likely due to the high-entropy effect which stabilizes the amorphous structure with enhanced homogeneity.

  14. Effects of the ratio of O{sub 2}/Ar pressure on wettability and optical properties of HfO{sub 2} films before and after doping with Al

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Su-Shia, E-mail: sushia@ncnu.edu.tw [Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli, Nantou Hsien 54561, Taiwan, ROC (China); Liao, Chung-Sheng [Department of Electrical Engineering, National Chi Nan University, Puli, Nantou Hsien 54561, Taiwan, ROC (China)

    2016-09-01

    Highlights: • Al-doped HfO{sub 2} (HfO{sub 2}:Al) films had similar structure to HfO{sub 2} films. • Al compounds and HfO{sub 2} coexisted in HfO{sub 2}:Al films by XPS analysis. • Al dopant could change the hydrophobicity of HfO{sub 2} film into hydrophilicity. • HfO{sub 2}:Al films show a large transparent range from NIR to UV at high O{sub 2} pressure. - Abstract: HfO{sub 2} films were doped with Al (HfO{sub 2}:Al) by simultaneous RF magnetron sputtering of HfO{sub 2} and DC magnetron sputtering of Al. This method is characterized by its ability to independently control the Al content. According to XRD and XPS analyses, the HfO{sub 2}:Al film had a structure similar to that of HfO{sub 2} film, and most of the Al atoms were not in the HfO{sub 2} crystalline. A small amount of Al{sup 3+} dopant could transform the hydrophobicity of HfO{sub 2} films into hydrophilicity. Moreover, the hydrophilicity of the HfO{sub 2}:Al films improved as the ratio of O{sub 2}/Ar pressure increased. The nonlinear refractive indices of HfO{sub 2} and HfO{sub 2}:Al films deposited in a pure Ar or a mixed Ar–O{sub 2} atmosphere were measured by Moiré deflectometry, and were of the order of 10{sup –8} cm{sup 2} W{sup –1}. A lower surface roughness, higher optical transmission in the UV–vis–NIR region, and higher linear refractive index were obtained at a higher ratio of O{sub 2}/Ar pressure.

  15. Photo-, cathodo- and thermoluminescent properties of dysprosium-doped HfO2 films deposited by ultrasonic spray pyrolysis.

    Science.gov (United States)

    Manríquez, R Reynoso; Góngora, J A I Díaz; Guzmán-Mendoza, J; Montalvo, T Rivera; Olguín, J C Guzmán; Ramírez, P V Cerón; García-Hipólito, M; Falcony, C

    2014-09-01

    In this work, the photoluminescent (PL), cathodoluminescent (CL) and thermoluminescent (TL) properties of hafnium oxide films doped with trivalent dysprosium ions are reported. The films were deposited on glass substrates at temperatures ranging from 300 to 600°C, using chlorides as precursor reagents. The surface morphology of films showed a veins shaped microstructure at low deposition temperatures, while at higher temperatures the formation of spherical particles was observed on the surface. X-ray diffraction showed the presence of HfO2 monoclinic phase in the films deposited at temperatures greater than 400°C. The PL and CL spectra of the doped films showed the highest emission band centered at 575nm corresponding to the transitions (4)F9/2→(6)H13/2, which is a characteristic transition of Dy(3+) ion. The greatest emission intensities were observed in samples doped with 1 atomic percent (at%) of DyCl3 in the precursor solution. Regarding the TL behavior, the glow curve of HfO2:Dy(+3) films exhibited spectrum with one broad band centered at about 150°C. The highest intensity TL response was observed on the films deposited at 500°C. Copyright © 2014 Elsevier Ltd. All rights reserved.

  16. Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET

    Science.gov (United States)

    Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

    2016-11-01

    Ultrathin Hf-Ti-O higher k gate dielectric films ( 2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) 9.4%, low equivalent gate oxide thickness (EOT) of 0.69 nm and acceptable gate leakage current density of 0.61 A/cm2 @ ( V fb - 1) V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on/ I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO2. With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length ( W/ L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on, I on/ I off ratio in the magnitude of 105, and peak transconductance, as well as suitable threshold voltage (-0.3 -0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL swing <70 mV/decade.

  17. Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Corrêa, Silma Alberton, E-mail: silma.alberton@ufrgs.br; Brizzi, Simone; Schmeisser, Dieter [Applied Physics and Sensors, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)

    2016-01-15

    The electronic structure of HfO{sub 2} thin films is investigated employing resonant photoelectron spectroscopy (resPES). The detailed analysis of the O1s resonance profile enables the determination of the partial density of states for the valence and the conduction bands as well as the electronic band gap to be 6.2 eV. The position of the charge neutrality level is evaluated. Thereby, it is demonstrated that the resPES data are able to combine information both for the valence as well as for the conduction band states. In addition, evidences for intrinsic in-gap states attributed to polaronic and charge transfer states are given. Electronic charges within the atomic layer deposition-HfO{sub 2} films are identified, pointing out that the amount of charges is essential to determine the accurate position of the surface potentials.

  18. HfO2/porous anodic alumina composite films for multifunctional data storage media materials under electric field control

    Science.gov (United States)

    Qi, Li-Qian; Pan, Di-Ya; Li, Jun-Qing; Liu, Li-Hu; Sun, Hui-Yuan

    2017-03-01

    New materials for achieving direct electric field control of ferromagnetism and resistance behavior are highly desirable in the development of multifunctional data storage devices. In this paper, HfO2 nanoporous films have been fabricated on porous anodic alumina (PAA) substrates by DC-reactive magnetron sputtering. Electrically induced resistive switching (RS) and modulated room temperature ferromagnetism are simultaneously found in a Ag/HfO2/PAA/Al (Ag/HP/Al) heterostructure. The switching mechanism between low resistance state and high resistance state is generally attributed to the formation/rupture of conductive filaments which may consist of oxygen vacancies. The combination of the electric field control of magnetization change and RS makes HP films possible for the multifunctional data storage media materials.

  19. Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode.

    Science.gov (United States)

    Wang, Yi; Wang, Hao; Ye, Cong; Zhang, Jun; Wang, Hanbin; Jiang, Yong

    2011-10-01

    The high-k dielectric HfO(2) thin films were deposited by pulsed laser deposition in nitrogen atmosphere. Rapid thermal annealing effect on film surface roughness, structure and electrical properties of HfO(2) film was investigated. The mechanism of interfacial reaction and the annealing atmosphere effect on the interfacial layer thickness were discussed. The sample annealed in nitrogen shows an amorphous dominated structure and the lowest leakage current density. Capacitors with high-k HfO(2) film as gate dielectric were fabricated, using Pt, Au, and Ti as the top gate electrode whereas Pt constitutes the bottom side electrode. At the gate injection case, the Pt- and Au-gated metal oxide semiconductor devices present a lower leakage current than that of the Ti-gated device, as well as similar leakage current conduction mechanism and interfacial properties at the metal/HfO(2) interface, because of their close work function and chemical properties.

  20. Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films.

    Science.gov (United States)

    Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin; Lee, Young Hwan; Moon, Taehwan; Kim, Keum Do; Hyun, Seung Dam; Fengler, Franz; Schroeder, Uwe; Hwang, Cheol Seong

    2016-06-22

    In this study, the changes in the structural and electrical properties of ferroelectric Hf1-xZrxO2 films with various Zr contents (0.26-0.70) were systematically examined during electric field cycling, resulting in a "wake-up" effect. To quantify the degree of wake-up effect, a "variable" polarization as the difference between remanent and saturation polarization was suggested as a new parameter, which could be calculated by excluding the linear dielectric contribution from the total electric displacement. Here, the variable polarization value could be minimized for an optimized Zr content of 0.43, which was slightly lower than the value for the largest remanent polarization. The polymorphism in Hf1-xZrxO2 thin films is known to be complicated due to the relatively small energy differences between various phases, such as the monoclinic, tetragonal, and orthorhombic phases. The variations in the polarization-electric field characteristics and dielectric constant values could be qualitatively and quantitatively understood based on the competition of various polymorphs that are dependent on the Zr content. Furthermore, a schematic model for the spatial distribution of mixed phases was suggested for Hf1-xZrxO2 films with various Zr contents based on the experimental observations.

  1. Feasibility of ZnO:Al/Ag/ZnO:Al multilayer source/drain electrode to achieve fully transparent HfInZnO thin film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jun [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Zhang, Jian-Hua, E-mail: jhzhang@staff.shu.edu.cn [Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Jiang, Xue-Yin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang, Zhi-Lin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China)

    2016-04-30

    We fabricated fully transparent hafnium indium zinc oxide (HfInZnO) thin film transistors (TFTs) with ZnO:Al(AZO)/Ag/ZnO:Al multilayer source/drain (S/D) electrodes. The effect of Ag interlayer thickness on the electrical and optical properties of AZO(60 nm)/Ag/AZO(60 nm) multilayer films was investigated. The AZO(60 nm)/Ag(10 nm)/AZO(60 nm) multilayer film shows a low sheet resistance of 10.5 Ω/square and a transmittance of 87%. Compared with HfInZnO-TFT with AZO electrode, the performance of the device with AZO/Ag/AZO multilayer electrode was significantly improved. The field effect mobility increased from 3.2 to 5.8 cm{sup 2}/V s, and the threshold voltage reduced from 2.3 to 0.1 V. The improvement was attributed to the lower resistivity of AZO/Ag/AZO multilayer film. The result indicates that AZO/Ag/AZO multilayer electrode is a promising S/D electrode for fully transparent HfInZnO-TFTs. - Highlights: • ZnO:Al/Ag/ZnO:Al multilayer films prepared by sputtering. • ZnO:Al/Ag/ZnO:Al multilayer films used as source/drain electrode. • Improved performance of HfInZnO thin film transistors (TFTs) with the multilayer film. • Contact resistance of HfInZnO-TFTs calculated.

  2. Monomeric malonate precursors for the MOCVD of HfO2 and ZrO2 thin films.

    Science.gov (United States)

    Pothiraja, Ramasamy; Milanov, Andrian; Parala, Harish; Winter, Manuela; Fischer, Roland A; Devi, Anjana

    2009-01-28

    New Hf and Zr malonate complexes have been synthesized by the reaction of metal amides with different malonate ligands (L = dimethyl malonate (Hdmml), diethyl malonate (Hdeml), di-tert-butyl malonate (Hdbml) and bis(trimethylsilyl) malonate (Hbsml)). Homoleptic eight-coordinated monomeric compounds of the type ML4 were obtained for Hf with all the malonate ligands employed. In contrast, for Zr only Hdmml and Hdeml yielded the eight-coordinated monomeric compounds of the type ML4, while using the bulky Hdbml and Hbsml ligands resulted into mixed alkoxo-malonato six-coordinated compounds of the type [ML2(OR)2]. Single crystal X-ray diffraction studies of all the compounds are presented and discussed, and they are found to be monomeric. The complexes are solids and in solution, they retain their monomeric nature as evidenced by NMR measurements. Compared to the classical beta-diketonate complexes, [M(acac)4] and [M(thd)4] (M = Hf, Zr; acac: acetylacetonate; thd: tetramethylheptadione), the new malonate compounds are more volatile, decompose at lower temperatures and have lower melting points. In particular, the homoleptic diethyl malonate complexes of Hf and Zr melt at temperatures as low as 62 degrees C. In addition, the compounds are very stable in air and can be sublimed quantitatively. The promising thermal properties makes these compounds interesting for metal-organic chemical vapor deposition (MOCVD). This was demonstrated by depositing HfO2 and ZrO2 thin films successfully with two representative Hf and Zr complexes.

  3. Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2

    OpenAIRE

    Choi, HW; Lai, PT; Xu, JP; Deng, LF; Liu, YR

    2009-01-01

    OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by...

  4. Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

    Energy Technology Data Exchange (ETDEWEB)

    Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Charrier, J. [FOTON, UMR CNRS 6082, Enssat, 6 rue de Kerampont, BP 80518, 22305 Lannion (France); Cathelinaud, M. [Missions des Ressources et Compétences Technologiques, UPS CNRS 2274, 92195 Meudon (France); Allix, M. [CEMHTI-CNRS, Site Haute Température, Orléans (France); Adam, J.-L.; Zhang, S. [Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France)

    2013-07-31

    Amorphous chalcogenide and alumino-silicate thin films were fabricated by the pulsed laser deposition technique. Prepared films were characterized in terms of their morphology, chemical composition, and optical properties. Multilayered thin film stacks for reflectors and vertical microcavities were designed for telecommunication wavelength and the window of atmosphere transparency (band II) at 1.54 μm and 4.65 μm, respectively. Bearing in mind the benefit coming from the opportunity of an efficient wavelength tuning or, conversely, to stabilize the photoinduced effects in chalcogenide films as well as to improve their mechanical properties and/or their chemical durability, several pairs of materials from pure chalcogenide layers to chalcogenide/oxide layers were investigated. Different layer stacks were fabricated in order to check the compatibility between dissimilar materials which can have a strong influence on the interface roughness, adhesion, density, and homogeneity, for instance. Three different reflector designs were formulated and tested including all-chalcogenide layers (As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70}) and mixed chalcogenide-oxide layers (As{sub 40}Se{sub 60}/alumino-silicate and Ga{sub 10}Ge{sub 15}Te{sub 75}/alumino-silicate). Prepared multilayers showed good compatibility between different material pairs deposited by laser ablation despite the diversity of chemical compositions. As{sub 40}Se{sub 60}/alumino-silicate reflector showed the best parameters; its stop band (R > 97% at 8° off-normal incidence) has a bandwidth of ∼ 100 nm and it is centered at 1490 nm. The quality of the different mirrors developed was good enough to try to obtain a microcavity structure for the 1.5 μm telecommunication wavelength made of chalcogenide layers. The microcavity structure consists of Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} (doped with 5000 ppm of Er{sup 3+}) spacer surrounded by two 10-layer As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70

  5. Hetero-epitaxial growth of the cubic single crystalline HfO 2 film as high k materials by pulsed laser ablation

    Science.gov (United States)

    Zhang, Xinqiang; Tu, Hailing; Wang, Xiaona; Xiong, Yuhua; Yang, Mengmeng; Wang, Lei; Du, Jun

    2010-10-01

    We report a hetero-epitaxial growth of cubic single crystalline HfO 2 film on Si substrates as high k materials by pulse laser ablation (PLA) at 820 °C. To eliminate the interfacial defects, the HfO 2 film has then been annealed at 900 °C for 5 min in N 2. Reflection high-energy electron diffraction (RHEED) results indicate orientation of the HfO 2 film on Si substrates corresponding to (∥( and [∥[. An interface layer has been revealed by high-resolution transmission electron microscope (HRTEM). Through capacitance-voltage ( C- V) and current-voltage ( I- V), it has been obtained that the leakage current of the HfO 2 gate insulator with dielectric constant of 26 is 5×10 -6 A/cm 2 at -1 V.

  6. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  7. SHI induced effects on the electrical and optical properties of HfO2 thin films deposited by RF sputtering

    Science.gov (United States)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S. V. S.; Pathak, A. P.

    2016-07-01

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO2 as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO2 is the only alternative to reduce the leakage current. HfO2 is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO2 thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO2/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I-V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  8. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing

    Science.gov (United States)

    Mimura, Takanori; Katayama, Kiliha; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-08-01

    0.07YO1.5-0.93HfO2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiOx/SiO2/(001)Si substrates, and (111)ITO/(111)Pt/TiOx/SiO2/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ-2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiOx/SiO2/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiOx/SiO2/(001)Si substrate, which does not contain ITO. Polarization-hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (Pr) of 9.6 and 10.8 μC/cm2 and coercive fields (Ec) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  9. Improvement in ferroelectricity of Hf x Zr1- x O2 thin films using ZrO2 seed layer

    Science.gov (United States)

    Onaya, Takashi; Nabatame, Toshihide; Sawamoto, Naomi; Ohi, Akihiko; Ikeda, Naoki; Chikyow, Toyohiro; Ogura, Atsushi

    2017-08-01

    The effect of crystallized ZrO2 (ZrO2-seed), amorphous Hf0.43Zr0.57O2 (HZO; HZO-seed), and amorphous Al2O3 (Al2O3-seed) seed layers on the ferroelectricity of HZO films was investigated. The remanent polarization (2P\\text{r} = P\\text{r} + - P\\text{r} - ) of a TiN-electroded capacitor with a ZrO2-seed layer was much larger than that of capacitors with a HZO-seed, Al2O3-seed, or no seed layer. Furthermore, the maximum 2P r was exhibited when the thickness of the ZrO2-seed layer was 2 nm. Large grain growth was observed, which satisfied the same lattice pattern between ZrO2 and HZO films, and indicates that the ZrO2 seed layer plays an important role in the nucleation of the HZO film.

  10. Laser conditioning and electronic defect measurements of HfO sub 2 and SiO sub 2 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, M.R.; Staggs, M.; Rainer, F. (Lawrence Livermore National Lab., CA (USA)); Stathis, J.H. (International Business Machines Corp., Yorktown Heights, NY (USA). Thomas J. Watson Research Center)

    1990-12-17

    Multilayer HfO{sub 2}/SiO{sub 2} high reflectors (HR) and polarizers show a permanent increase in their 1064-nm damage thresholds following laser conditioning at subthreshold fluences. Threshold increases of 2--3x are typical. In an effort to better understand the conditioning effect we have made laser conditioning and electronic property measurements on single layers of these two materials. The laser damage threshold of 1-{mu}m thick e-beam deposited SiO{sub 2} was increased by laser conditioning for wavelengths ranging from 355 to 1046 nm. The damage threshold of HfO{sub 2} single layers was not influenced by sub-threshold illumination. As-deposited thin films of a-SiO{sub 2} are known to contain paramagnetic electronic defects. We have used electron paramagnetic resonance (EPR) to study the concentrations and types of defects present in single layer and multilayer films of HfO{sub 2} and SiO{sub 2}. E{prime} and oxygen hole centers with concentrations on the order of 10{sup 17}/cm{sup 3} have been measured in the SiO{sub 2} layers. A previously unreported defect has been observed for HfO{sub 2}. The concentration of defects was studied both before and after laser conditioning and damage with 1064-nm photons. These electronic structure measurements are discussed in relation to an electronic defect model for laser conditioning of dielectric multilayers. 27 refs., 11 figs., 1 tab.

  11. Structure, chemistry and luminescence properties of dielectric La{sub x}Hf{sub 1-x}O{sub y} films

    Energy Technology Data Exchange (ETDEWEB)

    Kaichev, V.V., E-mail: vvk@catalysis.ru [Boreskov Institute of Catalysis, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Smirnova, T.P.; Yakovkina, L.V. [Nikolaev Institute of Inorganic Chemistry, Novosibirsk (Russian Federation); Ivanova, E.V.; Zamoryanskaya, M.V. [Ioffe Physical-Technical Institute, St. Petersburg (Russian Federation); Saraev, A.A. [Boreskov Institute of Catalysis, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Pustovarov, V.A. [Ural State Technical University, Ekaterinburg (Russian Federation); Perevalov, T.V.; Gritsenko, V.A. [Novosibirsk State University, Novosibirsk (Russian Federation); Rzhanov Institute of Semiconductor Physics, Novosibirsk (Russian Federation)

    2016-06-01

    Dielectric films of La{sub 2}O{sub 3}, HfO{sub 2}, and La{sub x}Hf{sub 1-x}O{sub y} were synthesized by metal-organic chemical vapor deposition. Structural, chemical, and luminescence properties of the films were studied using X-ray photoelectron spectroscopy, methods of X-ray diffraction and selected area electron diffraction, high-resolution transmission electron microscopy, and a cathodoluminescence technique. It was found that doping of hafnium oxide with lanthanum leads to the formation of a continuous series of solid solutions with a cubic structure. This process is accompanied by the formation of oxygen vacancies in the HfO{sub 2} lattice. Cathodoluminescence spectra of the La{sub x}Hf{sub 1-x}O{sub y}/Si films exhibited a wide band with the maximum near 2.4–2.5 eV, which corresponds to the blue emission. Quantum-chemical calculations showed that this blue band is due to oxygen vacancies in the HfO{sub 2} lattice. - Highlights: • HfO{sub 2} and solid solution La{sub x}Hf{sub 1-x}O{sub y} films were synthesized by MOCVD. • The continuous series of solid solutions with a cubic structure was formed at La doping of HfO{sub 2}. • Cathodoluminescence band at 2.4–2.5 eV is observed due to the oxygen vacancies in La{sub x}Hf{sub 1-x}O{sub y}. • The cathodoluminescence decreases in intensity when the La concentration increases.

  12. Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

    Science.gov (United States)

    Shimizu, Takao; Yokouchi, Tatsuhiko; Oikawa, Takahiro; Shiraishi, Takahisa; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Gruverman, Alexei; Funakubo, Hiroshi

    2015-03-01

    The ferroelectric properties of the (Hf0.5Zr0.5)O2 films on Pt/Ti/SiO2/Si substrate are investigated. It is found that the films crystallized by annealing in O2 and N2 atmospheres have similar crystal structures as well as remanent polarization and coercive fields. Weak temperature and frequency dependences of the ferroelectric properties indicate that the hysteretic behavior in HfO2-based films originates not from the mobile defects but rather from the lattice ionic displacement, as is the case of the typical ferroelectric materials.

  13. Influence of HF catalyst on the microstructure properties of ultra low-k thin films prepared by sol-gel method

    Institute of Scientific and Technical Information of China (English)

    He Zhi-Wei; Xu Da-Yin; Jiang Xiang-Hua; Wang Yin-Yue

    2008-01-01

    This paper reports that by using the hydrofluoric acid (HF) as the acid catalyst, F doped nanoporous low-k SiO2 thin films have been prepared by means of sol-gel method. The characterization of atomic force microscopy and Fourier transform infrared spectroscopy demonstrates that the HF catalyzed films are more hydrophobic. The N2 adsorption/desorption experiments show that the suited introduction of HF increases the porosity and decreases the pore size distribution (about 10 nm) in the films. The above results indicate that the hydrofluoric acid is the more suitable acid catalyst than the hydrochloric one for preparing nanoporous ultra low-k SiO2 thin films.

  14. Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

    Science.gov (United States)

    Mu, Yifei; Zhao, Ce Zhou; Lu, Qifeng; Zhao, Chun; Qi, Yanfei; Lam, Sang; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2017-09-01

    This paper reports the low-dose-rate radiation response of Al-HfO2/SiO2-Si MOS devices, in which the gate dielectric was formed by atomic layer deposition (ALD) with 5-nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radiation response technique under continuous gamma (γ) ray exposure at a relatively low dose rate of 0.116 rad (HfO2)/s. Compared with conventional CV measurements, the proposed measurements extract significant variations of flat-band voltage shift of the hafnium based MOS devices. The large flat-band voltage shift is mainly attributed to the radiation-induced oxide trapped charges, which are not readily compensated by bias-induced charges produced over the measurement timescales (for timescales less than 5 ms). A negative flat-band voltage shift up to -1.02 V was observed under a positive biased irradiation with the total dose up to 40 krad (HfO2) and with the electric field of 0.5 MV/cm. This is attributed to net positive charge generation in the HfO2 oxide layer. The generated charges are transported towards the HfO2/SiO2 interface, and then form effective trapped holes in the HfO2. Similarly, a positive flat-band voltage shift up to 1.1 V was observed from irradiation under negative bias with an electric field of -0.5 MV/cm. The positive shift is mainly due to the accumulation of trapped electrons. Analyses of the experimental results suggest that both hole and electron trapping can dominate the radiation response performance of the HfO2-based MOS devices depending upon the applied bias. It was also found there was no distinct border traps with irradiation in all cases.

  15. Effect of various nitrogen flow ratios on the optical properties of (Hf:N-DLC films prepared by reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Meng Qi

    2017-08-01

    Full Text Available Hf and N co-doped diamond-like carbon [(Hf:N-DLC] films were deposited on 316L stainless steel and glass substrates through reactive magnetron sputtering of hafnium and carbon targets at various nitrogen flow ratios (R=N2/[N2+CH4+Ar]. The effects of chemical composition and crystal structure on the optical properties of the (Hf:N-DLC films were studied. The obtained films consist of uniform HfN nanocrystallines embedded into the DLC matrix. The size of the graphite clusters with sp2 bonds (La and the ID/IG ratio increase to 2.47 nm and 3.37, respectively, with increasing R. The optical band gap of the films decreases from 2.01 eV to 1.84 eV with increasing R. This finding is consistent with the trends of structural transformations and could be related to the increase in the density of π-bonds due to nitrogen incorporation. This paper reports the influence of nitrogen flow ratio on the correlation among the chemical composition, crystal structure, and optical properties of (Hf:N-DLC films.

  16. Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

    Science.gov (United States)

    Spiga, S.; Wiemer, C.; Tallarida, G.; Scarel, G.; Ferrari, S.; Seguini, G.; Fanciulli, M.

    2005-09-01

    We report on the growth by atomic layer deposition of HfO2 films on HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O3 or H2O as oxygen sources. The choice of the oxygen precursor strongly influences the structural, chemical, and electrical properties of the HfO2 films: Those grown using H2O exhibit local epitaxial growth, a large amount of contaminants such as chlorine and carbon, and a large frequency dispersion of the capacitance-voltage (C -V) characteristics. Films grown using O3 are good insulators and exhibit well-shaped C -V curves with a minimum frequency dispersion of the accumulation capacitance. Moreover, they are smoother, less crystallized, and with a lower contaminant content than those grown using H2O. However, the use of O3 leads to the formation of a 2nm thick layer, possibly GeOx, at the HfO2/Ge interface.

  17. Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemical-vapor-deposited Hf-O films on Si

    Science.gov (United States)

    Dey, S. K.; Das, A.; Tsai, M.; Gu, D.; Floyd, M.; Carpenter, R. W.; De Waard, H.; Werkhoven, C.; Marcus, S.

    2004-05-01

    The relationships among the equivalent oxide thickness (EOT), nanochemistry, and nanostructure of atomic layer chemical-vapor-deposited (ALCVD) Hf-O-based films, with oxide and nitrided oxide interlayers on Si substrates, were studied using x-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) in annular dark-field imaging (ADF), and parallel electron energy-loss spectroscopy (PEELS), capacitance-voltage, and leakage-current-voltage measurements. The XPS (Hf 4f binding energy shift) studies indicated the formation of Hf-O-Si bonds in as-deposited amorphous films, the amount of which was influenced by the interlayer composition and annealing conditions. After post-deposition annealing in N2 and O2, the Hf-O layers were nanocrystalline. Although HRTEM images showed a structurally sharp interface between the Hf-O layer and the interlayer, angle-resolved XPS, ADF imaging, and PEELS in the STEM revealed a chemically diffused HfSiOx region in between. This interdiffusion was observed by the detection of Si (using Si L edge) and Hf (using Hf O2,3 edge) in the Hf-O layer and the interlayer. For an annealed Hf-O/interlayer stack, with an ALCVD target thickness of 4.0 nm for the Hf-O layer on 1.2 nm of nitrided chemical oxide, the experimentally measured EOT and leakage current (at -1 V) were 1.52 nm and ˜10-8 A/cm2. A three-layer (1.2 nm interlayer of nitrided chemical oxide/compositionally graded, 2 nm region of HfSiOx/2 nm HfO2 layer) capacitor model was used to determine the respective contributions to the measured EOT, and the dielectric permittivity of the interlayer was found to be 6.06. These studies clearly indicate that a total EOT of 1 nm and below is attainable in the Hf-N-O-Si/Si-N-O system.

  18. Optical properties and structure of HfO{sub 2} thin films grown by high pressure reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    MartInez, F L [Departamento de Electronica y TecnologIa de Computadoras, Universidad Politecnica de Cartagena, Campus Universitario Muralla del Mar, E-30202 Cartagena (Spain); Toledano-Luque, M [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain); GandIa, J J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Carabe, J [Departamento de EnergIa, CIEMAT, Avda. Complutense 22, E-28040 Madrid (Spain); Bohne, W [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Roehrich, J [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Strub, E [Hahn-Meitner-Institut Berlin, Abteilung SF4, D-14109 Berlin (Germany); Martil, I [Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, E-28040 Madrid (Spain)

    2007-09-07

    Thin films of hafnium oxide (HfO{sub 2}) have been grown by high pressure reactive sputtering on transparent quartz substrates (UV-grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous films. Optical properties of the films deposited on the silica substrates were investigated by transmittance and reflectance spectroscopy in the ultraviolet, visible and near infrared range. A numerical analysis method that takes into account the different surface roughness of the polycrystalline and amorphous films was applied to calculate the optical constants (refractive index and absorption coefficient). Amorphous films were found to have a higher refractive index and a lower transparency than polycrystalline films. This is attributed to a higher density of the amorphous samples, which was confirmed by atomic density measurements performed by heavy-ion elastic recoil detection analysis. The absorption coefficient gave an excellent fit to the Tauc law (indirect gap), which allowed a band gap value of 5.54 eV to be obtained. The structure of the films (amorphous or polycrystalline) was found to have no significant influence on the nature of the band gap. The Tauc plots also give information about the structure of the films, because the slope of the plot (the Tauc parameter) is related to the degree of order in the bond network. The amorphous samples had a larger value of the Tauc parameter, i.e. more order than the polycrystalline samples. This is indicative of a uniform bond network with percolation of the bond chains, in contrast to the randomly oriented polycrystalline grains separated by grain boundaries.

  19. First Principles Calculation of Elastic Constants of Monoclinic HfO2 Thin Film%单斜相HfO2薄膜弹性常数的第一性原理计算

    Institute of Scientific and Technical Information of China (English)

    蔺玲; 邵淑英; 李静平

    2013-01-01

    用电子束蒸发沉积在K9玻璃基底上镀制HfO2薄膜,沉积温度为200℃,蒸发速率为0.03 nm/s.由X射线衍射谱可知薄膜出现明显结晶,且为单斜相和正交相混合结构,其中单斜相占明显优势.用Jade5软件分析得到单斜相HfO2的晶格常数a,b,c以及晶格矢量a和c之间的夹角β.基于得到的晶格常数建立了单斜相HfO2薄膜的晶体结构模型.同时建立固态单斜相HfO2的晶体结构模型进行对比.通过密度泛函理论(DFT)框架下的平面超软赝势法,采用两种不同的交换关联函数:局域密度近似(LDA)中的CA-PZ和广义梯度近似(GGA)中的质子平衡方程(PBE),计算了薄膜态和固态单斜晶相HfO2的弹性刚度系数矩阵Gij和弹性柔度系数矩阵Sij,Reuss模型、Voigt模型和Hill理论下的体积模量和剪切模量,材料平均杨氏模量和泊松比.此外还计算得到薄膜态和固态单斜晶相HfO2在不同方向上的杨氏模量.%HfO2 films are deposited by electron beam evaporation at a deposition rate of 0.03 nm/s and deposition temperature of 200 ℃ on K9 glass substrates. The films are observed to show a mixed structure of monoclinic and orthorhombic phase through X-ray diffraction and monoclinic phase is of obvious advantages. The structure parameters a, b, c and angel β of monoclinic HfO2 films are obtained using Jade5 software, based on which the crystal structure model is built. While solid crystal monoclinic HfO2 model is built to compare with the thin film one. Elastic stiffness constants of monoclinic HfO2 thin film and solid crystal are investigated using the plane waves ultrasoft pseudopotential technique based on the density functional theory (DFT) under two different exchange correlation functions of local density approximation (LDA) CA-PZ and generalized gradient approximation (GGA) PBE. Reuss, Voigt and Hill theories are used to estimate the bulk, shear and average Young's moduli and Possion ratio for polycrystalline HfO2

  20. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    Science.gov (United States)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Lambers, Eric; Rudawski, Nicholas G.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2015-04-01

    Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  1. Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy

    Science.gov (United States)

    Kremmer, S.; Wurmbauer, H.; Teichert, C.; Tallarida, G.; Spiga, S.; Wiemer, C.; Fanciulli, M.

    2005-04-01

    The morphological and electrical evolution of HfO2 and ZrO2 thin films is investigated on the nanoscale using conducting atomic-force microscopy in ultrahigh vacuum. Films of different thicknesses have been grown by atomic layer deposition. With increasing film thickness the film structure changes from amorphous to polycrystalline. By conducting atomic-force microscopy using local current-voltage curve statistics and two-dimensional current imaging it is found that the formation of crystallites has different effects on the electrical properties of the two dielectrics. In the case of HfO2, the crystalline fraction causes weak spots in the oxide, whereas for the ZrO2 films the crystallites exhibit lower leakage currents compared to the amorphous matrix and leakage is mainly determined by thickness fluctuations.

  2. Electrical and physicochemical properties of atomic-layer-deposited HfO{sub 2} film on Si substrate with interfacial layer grown by nitric acid oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seung Hyun [Department of Advanced Materials Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Seok, Tae Jun; Jin, Hyun Soo [Department of Materials Science & Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Kim, Woo-Byoung, E-mail: woo7838@dankook.ac.kr [Department of Energy Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Advanced Materials Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Department of Materials Science & Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of)

    2016-03-01

    Graphical abstract: - Highlights: • Ultrathin SiO{sub 2} interfacial layers grown using nitric acid oxidation and O{sub 3} oxidation were adopted at the interface of HfO{sub 2}/Si. • Higher physical density of interfacial layer grown using nitric acid oxidation resulted in the suppressed Si diffusion from substrate into the film. • The interface properties as well as permittivity of the film were improved by adoption of interfacial layer grown using nitric acid oxidation. - Abstract: The ultrathin SiO{sub 2} interfacial layer (IL) was adopted at the interface between atomic-layer-deposited HfO{sub 2} gate dielectric film and a Si substrate, which was grown using nitric acid oxidation (NAO) and O{sub 3} oxidation (OZO) prior to HfO{sub 2} film deposition. X-ray photoelectron spectroscopy result revealed that Si diffusion from the substrate into the film was suppressed for the film with NAO compared to that with OZO, which was attributed to the higher physical density of IL. The electrical measurement using metal–insulator–semiconductor devices showed that the film with NAO exhibited higher effective permittivity and lower densities of fixed charge and slow state at the interface. Furthermore, the leakage current density at an equivalent electrical thickness was lower for the film with NAO than OZO.

  3. Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

    Science.gov (United States)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Syogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-09-01

    In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.

  4. Preparation of a new gate dielectric material HfTiON film

    Institute of Scientific and Technical Information of China (English)

    YU Guo-yi; ZOU Xue-cheng; CHEN Wei-bing

    2007-01-01

    A new gate dielectric material HfTiON is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient,followed by annealing in N2 at 600℃ and 800℃ respectively for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared for different anneal conditions. The results indicate that the sample annealed at 800 ℃ exhibits lower interface-state and oxide-charge densities, and better device reliability. This is attributed to the fact that the rapid thermal annealing at the higher temperature of 800 ℃ can effectively remove the damage-induced precipitation, forming a hardened dielectric/Si interface with high reliability.

  5. Efficient red-emission InGaN/GaN multilayered structure on Si with surface-nitrified HfO{sub 2} film as buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei; Zhang, Xuehua; Hu, Fangren [Nanjing University of Posts and Telecommunications, School of Optoelectronic Engineering, Nanjing (China); Nanjing University of Posts and Telecommunications, Peter Grunberg Research Center, Nanjing (China); Wang, Yongjin [Nanjing University of Posts and Telecommunications, Peter Grunberg Research Center, Nanjing (China); Hane, K. [Tohoku University, Department of Nanomechanics, Sendai (Japan)

    2016-03-15

    A four-period InGaN/GaN (8 nm/48 nm) layered structure was deposited on a Si substrate with a surface-nitrified HfO{sub 2} film as a buffer layer (5 nm). A high In concentration of In{sub 0.36}Ga{sub 0.64}N was obtained in the InGaN layers. Red photoluminescence of 648 nm was observed from the layered structure. The internal quantum efficiency of the red emission from the InGaN layers on the surface-nitrified HfO{sub 2}/Si was 52 %, which was more than 18 times larger than that on the Si substrate without HfO{sub 2}. The surface-nitrified HfO{sub 2} provides another effective buffer layer to grow the InGaN/GaN layered structure on the Si substrate. (orig.)

  6. F and Ti doped silicate nanocomposite thin films for antimicrobial and easy clean applications.

    Science.gov (United States)

    Seo, YongSeong; Son, You-Hwan; Kim, Dae-Jin; Cho, Won-Je; Raj, C Justin; HyunYu, Kook

    2014-12-01

    Titanium isopropoxide (TIPO), tetraethyl orthosilicate (TEOS) and Fluoroalkylsilane (FAS) silane precursor were employed to coat transparent thin film on the glass substrate and these effectively prevents pollution on the glass from microorganisms. The each nanocomposition film was prepared by sol-gel method, the solution of nanocomposite was coated by spin coater with 1200 rpm for 30 sec and cured by thermal at 100 degrees C on glass which surface treated with Piranha solution. The nanocomposite films with highly self cleaning efficacy were fabricated and studied for various molar compositions of TEOS, TIPO and FAS. TEOS/TIPO film in glass substrate shows an optical transparency over 90% up to 30 mol% of TIPO in TEOS/TIPO composite films and also FAS incorporated up to 4 mol% onto TEOS/TIPO films. The anti-microbial efficiency of the nanocomposite film was improved 30% when it was exposed under UV light radiation than that in ambient condition.

  7. Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

    KAUST Repository

    Zhang, Bo

    2016-12-28

    We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

  8. Effects of water vapor in high vacuum chamber on the properties of HfO2 films

    Institute of Scientific and Technical Information of China (English)

    Bo Ling; Hongbo He; Jianda Shao

    2007-01-01

    The influence of water vapor content in high vacuum chamber during the coating process on physical properties of HfO2 films was investigated. Coatings were deposited on BK7 substrates by electron beam evaporation and photoelectric maximum control method. An in situ residual gas analyzer (RGA) was used to monitor the residual gas composition in the vacuum chamber. The optical properties, microstructure,absorption and laser-induced damage threshold (LIDT) of the samples were characterized by Lambda 900 spectrophotometer, X-ray diffraction (XRD), surface thermal lensing (STL) technique and 1064-nm Qswitched pulsed laser at a pulse duration of 12 ns respectively. It was found that a cold trap is an effective equipment to suppress water vapor in the vacuum chamber during the pumping process, and the coatings deposited in the vacuum atmosphere with relatively low water vapor composition show higher refractive index and smaller grain size. Meanwhile, the higher LIDT value is corresponding to lower absorbance.

  9. Effect of layered silicate content on the morphology and thermal properties of Poly(vinyl alcohol) films; Efeito do teor de silicato em camadas na morfologia e propriedades termicas de filmes de poli(alcool vinilico)

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Jessica R.M.B. da; Santos, Barbara F.F. dos; Leite, Itamara F., E-mail: jraquell@homail.com [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Centro de Tecnologia. Departamento de Engenharia de Materiais

    2015-07-01

    This study aims to evaluate the effect of layered silicate content on the morphology and thermal properties of PVA films. The PVA/layered silicate (AN) films were prepared by intercalation solution, using 1 to 2% of bentonite with respect to the PVA total weight. Then the films were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), thermogravimetry (TG) and differential scanning calorimetry (DSC). Results of the FTIR revealed interaction between the functional groups of the PVA and the layered silicate. The XRD analysis showed that nanocomposites with intercalated and partially exfoliated morphology were obtained. The results of TG showed that the nanocomposite PVA/2%AN showed higher thermal stability compared to PVA/1%AN. The DSC results showed that the addition of AN to the PVA did not affect crystallization rate, as well as promoted a reduction in glass transition temperature and melting of the PVA. (author)

  10. High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

    2016-09-01

    We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

  11. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States); Takmeel, Qanit [Department of Materials Science and Engineering at the University of Florida, Gainesville, Florida 32611 (United States); Zhou, Chuanzhen [Analytical Instrumentation Center, College of Engineering at North Carolina State University, Raleigh, North Carolina 27696 (United States); Fancher, Chris M.; Jones, Jacob L. [Department of Materials Science and Engineering at North Carolina State University, Raleigh, North Carolina 27696 (United States); Lambers, Eric; Rudawski, Nicholas G. [Major Analytical Instrumentation Center at the University of Florida, Gainesville, Florida 32611 (United States); Moghaddam, Saeed [Department of Mechanical and Aerospace Engineering at the University of Florida, Gainesville, Florida 32611 (United States)

    2015-04-07

    Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  12. Formation of Na1+xV3O8 Nanoribbon Thin Film from V2O5 Xerogel on Sodium Silicate Glass Substrate

    Institute of Scientific and Technical Information of China (English)

    GUO Yi; XU Jin-jie; LI Jun; YANG Wen-sheng

    2007-01-01

    Na1+xV3O8 nanoribbon thin film was successfully fabricated by annealing the V2O5 xerogel film on sodium silicate glass substrate at 450 ℃. It has been identified that the amount of sodium ions diffused into the V2O5 xerogel film increases with the high temperature of annealing treatment. The sodium glass substrate serves as a limited sodium source to induce the transformation from V2O5 to Na1+xV3O8.

  13. Solid-state dewetting of ultra-thin Au films on SiO₂ and HfO₂.

    Science.gov (United States)

    Seguini, G; Curi, J Llamoja; Spiga, S; Tallarida, G; Wiemer, C; Perego, M

    2014-12-12

    Ultra-thin Au films with thickness (h) ranging from 0.5 to 6.0 nm were deposited at room temperature (RT) by means of e-beam evaporation on SiO2 and HfO2. Due to the natural solid-state dewetting (SSD) of the as-deposited films, Au nanoparticles (NPs) were formed on the substrates. By properly adjusting the h value, the size and the density of the Au NPs can be finely tuned. For h = 0.5 nm, spherical-like Au NPs with diameter below 5 nm and density in the order of 10(12) Au NPs cm(-2) were obtained without any additional thermal treatment independently from the substrate. The dependence of the Au NPs characteristics on the substrate starts to be effective for h ≥ 1.0 nm where the Au NPs diameter is in the 5-10 nm range and the density is around 10(11) Au NPs cm(-2). The effect of a subsequent high temperature (400-800 °C) annealing in N2 atmosphere on the Au NPs was investigated as well. For h ≤ 1.0 nm, the Au NPs characteristics evidenced an excellent thermal stability. Whereas the thermal treatment affects the cristallinity of the Au NPs. For the thicker films (2.0 ≤ h ≤ 6.0 nm), the thermal treatment becomes effective to induce the SSD. The proposed methodology can be exploited for the synthesis of Au NPs with diameter below 10 nm on different substrates at RT.

  14. Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2

    Science.gov (United States)

    Seguini, G.; Llamoja Curi, J.; Spiga, S.; Tallarida, G.; Wiemer, C.; Perego, M.

    2014-12-01

    Ultra-thin Au films with thickness (h) ranging from 0.5 to 6.0 nm were deposited at room temperature (RT) by means of e-beam evaporation on SiO2 and HfO2. Due to the natural solid-state dewetting (SSD) of the as-deposited films, Au nanoparticles (NPs) were formed on the substrates. By properly adjusting the h value, the size and the density of the Au NPs can be finely tuned. For h = 0.5 nm, spherical-like Au NPs with diameter below 5 nm and density in the order of 1012 Au NPs cm-2 were obtained without any additional thermal treatment independently from the substrate. The dependence of the Au NPs characteristics on the substrate starts to be effective for h ≥ 1.0 nm where the Au NPs diameter is in the 5-10 nm range and the density is around 1011 Au NPs cm-2. The effect of a subsequent high temperature (400-800 °C) annealing in N2 atmosphere on the Au NPs was investigated as well. For h ≤ 1.0 nm, the Au NPs characteristics evidenced an excellent thermal stability. Whereas the thermal treatment affects the cristallinity of the Au NPs. For the thicker films (2.0 ≤ h ≤ 6.0 nm), the thermal treatment becomes effective to induce the SSD. The proposed methodology can be exploited for the synthesis of Au NPs with diameter below 10 nm on different substrates at RT.

  15. The study of multilayers Fe/Hf and Ni/Hf by slow positron beam technique

    Science.gov (United States)

    Tashiro, Mutsumi; Nakajyo, Terunobu; Murashige, Yusuke; Koizumi, Tomoya; Kanazawa, Ikuzo; Komori, Fumio; Soe, We-Hyo; Yamamoto, Ryoichi; Ito, Yasuo

    1997-05-01

    The S-parameters versus the incident positron energy are measured in the Ni/Hf multilayer, thin Hf film, thin Fe film and the bilayer Fe/Hf. We have analyzed the change in vacancy-type defects in these multilayers and thin films with the deposition temperature in the MBE system.

  16. Band Alignment and Optical Properties of (ZrO20.66(HfO20.34 Gate Dielectrics Thin Films on p-Si (100

    Directory of Open Access Journals (Sweden)

    Dahlang Tahir

    2011-11-01

    Full Text Available (ZrO20.66(HfO20.34 dielectric films on p-Si (100 were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO20.66(HfO20.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, The dielectric function ε (k, ω, index of refraction n and the extinction coefficient k for the (ZrO20.66(HfO20.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε (k,ω-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

  17. Effect of hafnium doping on density of states in dual-target magnetron co-sputtering HfZnSnO thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Chuan-Xin; Li, Jun, E-mail: SHUniverjunli@163.com; Fu, Yi-Zhou; Jiang, Xue-Yin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang, Jian-Hua [Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China); Zhang, Zhi-Lin [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072 (China)

    2015-11-23

    This study investigates the effect of hafnium doping on the density of states (DOSs) in HfZnSnO thin film transistors fabricated by dual-target magnetron co-sputtering system. The DOSs is extracted by temperature-dependent field-effect measurements, and they decrease from 1.1 × 10{sup 17} to 4.6 × 10{sup 16 }eV/cm{sup 3} with increasing the hafnium concentrations. The behavior of DOSs for the increasing hafnium concentration HfZnSnO thin film transistors can be confirmed by both the reduction of ΔV{sub T} under bias stress and the trapping charges calculated by capacitance voltage measurements. It suggests that the reduction in DOSs due to the hafnium doping is closely related with the bias stability and thermal stability.

  18. Influence of standing-wave electric field pattern on the laser damage resistance of HfO sub 2 thin films

    CERN Document Server

    Protopapa, M L; De Tomasi, F; Di Giulio, M; Perrone, M R; Scaglione, S

    2002-01-01

    The standing-wave electric field pattern that forms inside an optical coating as a consequence of laser irradiation is one of the factors influencing the coating laser-induced damage threshold. The influence of the standing-wave electric field profile on the damage resistance to ultraviolet radiation of hafnium dioxide (HfO sub 2) thin films was investigated in this work. To this end, HfO sub 2 thin films of different thicknesses deposited by the electron beam evaporation technique at the same deposition conditions were analyzed. Laser damage thresholds of the samples were measured at 308 nm (XeCl laser) by the photoacoustic beam deflection technique and microscopic inspections. The dependence of the laser damage threshold on the standing-wave electric field pattern was analyzed.

  19. Atomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds.

    Science.gov (United States)

    Wei, Yaowei; Pan, Feng; Zhang, Qinghua; Ma, Ping

    2015-01-01

    Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Reasons for film damaged were also investigated. The LIDTs for thin films deposited by improved process parameters reached a higher level than previously measured. Specifically, the LIDT of the Al2O3 thin film reached 40 J/cm(2). The LIDT of the HfO2/Al2O3 anti-reflector film reached 18 J/cm(2), the highest value reported for ALD single and anti-reflect films. In addition, it was shown that the LIDT could be improved by further altering the process parameters. All results show that ALD is an effective film deposition technique for fabrication of thin film components for high-power laser systems.

  20. Microstructure and electrical properties of XInZnO (X = Ti, Zr, Hf) films and device performance of their thin film transistors—The effects of employing Group IV-B elements in place of Ga

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Mi Ran [Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jeon, Haseok; Na, Sekwon; Kim, Sunho [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Donggeun [Department of Physics, Institute of Basic Science, Brain Korea 21 Physics Research Division, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Hyoungsub [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Hoo-Jeong, E-mail: hlee@skku.edu [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-06-25

    Highlights: ► The effects of adding Group IV B elements have been evaluated in this study. ► Adding alloying elements affected the oxygen vacancy and carrier concentrations, and mobility. ► Adding alloying elements enhanced the bias stability in the order of Ti, Zr and Hf. -- Abstract: In this study, we systematically investigated the effects of employing Group IV-B metals (Ti, Zr, and Hf) in place of Ga in GaInZnO films by fabricating XInZnO films (X = Ti, Zr, or Hf) with a various ratio of the Group IV-B elements. Materials characterization using various analytical methods (including transmission electron microscopy and X-ray photoelectron spectroscopy) elucidates that upon the addition of a small amount of the alloying elements, while the microstructure turned into amorphous from nanocrystalline, the oxygen vacancy concentration decreased systematically along with the carrier concentration. The device characteristics (threshold voltage and field-effect mobility) of the transistors fabricated from the films sensitively reflect the changes in the film properties (carrier concentration and bulk mobility). The bias stability enhanced with the increase of the ratio of the alloying elements to an extent that apparently increases in the order of Ti, Zr and Hf, which is reverse to the order of the electronegativity.

  1. Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1-xZrxO2 grains

    Science.gov (United States)

    Künneth, Christopher; Materlik, Robin; Kersch, Alfred

    2017-05-01

    Size effects from surface or interface energy play a pivotal role in stabilizing the ferroelectric phase in recently discovered thin film Zirconia-Hafnia. However, sufficient quantitative understanding has been lacking due to the interference with the stabilizing effect from dopants. For the important class of undoped Hf1-xZrxO2, a phase stability model based on free energy from Density functional theory (DFT) and surface energy values adapted to the sparse experimental and theoretical data has been successful to describe key properties of the available thin film data. Since surfaces and interfaces are prone to interference, the predictive capability of the model is surprising and directs to a hitherto undetected, underlying reason. New experimental data hint on the existence of an interlayer on the grain surface fixed in the tetragonal phase possibly shielding from external influence. To explore the consequences of such a mechanism, we develop an interface free energy model to include the fixed interlayer, generalize the grain model to include a grain radius distribution, calculate average polarization and permittivity, and compare the model with available experimental data. Since values for interface energies are sparse or uncertain, we obtain its values from minimizing the least square difference between predicted key parameters to experimental data in a global optimization. Since the detailed values for DFT energies depend on the chosen method, we repeat the search for different computed data sets and come out with quantitatively different but qualitatively consistent values for interface energies. The resulting values are physically very reasonable and the model is able to give qualitative prediction. On the other hand, the optimization reveals that the model is not able to fully capture the experimental data. We discuss possible physical effects and directions of research to possibly close this gap.

  2. Growth and Current Leakage Characteristics of SrHfON High-k Gate Dielectric Films%SrHfON高κ栅介质薄膜的漏电特性研究

    Institute of Scientific and Technical Information of China (English)

    王雪梅; 刘正堂; 冯丽萍

    2013-01-01

    采用射频反应磁控溅射法在p-Si(100)衬底上成功制备出SrHfON高k栅介质薄膜,并研究了Au/SrHfON/Si MOS电容的漏电流机制及应力感应漏电流(SILC)效应.结果表明,MOS电容的漏电流密度随N2流量的增加而减小.在正栅压下,漏电流主要由Schottky发射机制引起;在负栅压下,漏电流机制在低、中、高栅电场区时分别为Schottky发射、F-P发射和F-N隧穿机制.同时,Au/SrHfON/Si MOS电容表现出明显的SILC效应,经恒压应力后薄膜在正栅压下的漏电流由Schouky发射和F-P发射机制共同作用,且后者占主导地位.%The SrHfON high-κ gate dielectric films,deposited by RF reactive magnetron sputtering on p-type Si (100)substrates,were used to fabricate the Au/SrHfON/Si MOS capacitor.The impacts of the growth conditions on the leakage current density were evaluated with X-ray photoelectron spectroscopy and conventional proves.The leakage current conduction mechanisms and the stress induced leakage current(SILC) effect of the MOS capacitor were studied.The leakage current density of the MOS capacitor was found to decrease with an increase of N2 flow rate.At a positive bias of the metal gate,the leakage current mainly originated from Schottky emission,but at a negative bias,the leakage current in the low-,medium-and high-gate voltage ranges resulted from Schottky emission,Poole-Franel (F-P) emission and Fowler-Nord-heim (F-N) tunneling,respectively.In addition,the SILC effect was found to dominate the Au/SrHfON/Si MOS capacitor;but after being stressel by a constant voltage,Schottky emission outperforms F-P emission in generating the leakage current.

  3. 不同基底上HfO2/SiO2多层膜的力学性能%Mechanical Properties of HfO2/SiO2 Thin Films on Different Substrates

    Institute of Scientific and Technical Information of China (English)

    王河; 贺洪波; 张伟丽

    2013-01-01

    The HfO2/SiO2 films are deposited on K9 glass and Y3Al5O12 (YAG) crystal substrates by electron beam technology respectively.Nano-scratch tests are taken to investigate the mechanical properties of films respectively.The results show that the modulus of the films deposited on K9 and YAG are 34.8 GPa and 38.5 GPa respectively and the substrates have few effect on the elasticity modulus of the films.The adhesive force of the film is 7 mN on K9 substrate and 5 mN on YAG,and they present different failure modes.This can be attributed to the weak adhesion and large divergence of modulus between film and YAG crystal.The chemical binding state and elasticity modulus between the film and the substrate are taken to explain the different mechanical behaviors of the films on YAG and K9 substrates.%用电子束蒸发技术在K9玻璃及YAG晶体上沉积了HfO2/SiO2多层膜,采用纳米划痕仪对薄膜的力学性能进行了研究.实验结果表明:沉积在YAG和K9的多层膜弹性模量分别为34.8 GPa和38.5 GPa,基底对薄膜的弹性模量影响较小;YAG和K9上薄膜的粘附失效临界附着力分别为5 mN和7 mN,薄膜与YAG基底的结合状态较K9基底的差,并且呈现不同破坏模式.从薄膜之间及膜基界面处的界面结合状态和弹性模量两方面分析解释了YAG基底和K9基底上薄膜的不同力学行为.

  4. Trends of structural and electrical properties in atomic layer deposited HfO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Scarel, G.; Spiga, S.; Wiemer, C.; Tallarida, G.; Ferrari, S.; Fanciulli, M

    2004-06-15

    Understanding and optimizing electrical and structural properties of high-{kappa} oxides are key steps in view of their application as SiO{sub 2} substitutes in CMOS devices. In this work, we address the effects of growth temperature (T{sub g},) post-deposition annealing and substrate preparation on the structural, compositional, and electrical properties of thin films ({approx}13 nm thick), deposited on p-type Si(1 0 0)/SiO{sub 2} (chemical oxide) by atomic layer deposition (ALD). In particular, we investigate the effects of: (1) different T{sub g} (150, 250 and 350 deg. C); (2) rapid thermal annealing at 950 deg. C in N{sub 2} for 60 s; and (3) substrate in situ heat treatment before growth and longer pulses at the beginning of the deposition.

  5. Optimum Ferroelectric Film Thickness in Metal-Ferroelectric-Insulator-Semiconductor Structures Composed of Pt, (Bi,La)4Ti3O12, HfO2, and Si

    Science.gov (United States)

    Takahashi, Kazuhiro; Aizawa, Koji; Ishiwara, Hiroshi

    2006-06-01

    The optimum ferroelectric film thickness in metal-ferroelectric-insulator-semiconductor (MFIS) structures is investigated, in which 80- to 560-nm-thick (Bi,La)4Ti3O12 (BLT) films are deposited on HfO2 buffer layers using a sol-gel spin-coating method. It is found from electrical characteristics of MFIS diodes as well as MIS diodes that the HfO2 layers act as excellent barriers for suppressing both leakage current and atom interdiffusion when they are annealed in a rapid-thermal-annealing furnace at 900 °C for 1 min in O2 flow. In MFIS diodes, the memory window width in capacitance-voltage (C-V) characteristics is found to increase from 0.2 to 1.6 V, as ferroelectric film thickness increases from 80 to 560 nm. On the basis of these results, the relationships among memory window width, ferroelectric film thickness, and the optimum applied voltage are discussed. Finally, it is shown from the capacitance change measured over 24 h that data retention characteristics are excellent in samples with BLT films thicker than 240 nm.

  6. Improved interfacial and electrical properties of atomic layer deposition HfO{sub 2} films on Ge with La{sub 2}O{sub 3} passivation

    Energy Technology Data Exchange (ETDEWEB)

    Li Xuefei; Liu Xiaojie; Cao Yanqiang [National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Li Aidong, E-mail: adli@nju.edu.cn [National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China); Li Hui; Wu Di [National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer La{sub 2}O{sub 3} IPLs were deposited on Ge substrates at 250 Degree-Sign C by ALD using La[N(SiMe{sub 3}){sub 2}]{sub 3} and H{sub 2}O as the precursors. Black-Right-Pointing-Pointer CET of 1.35 nm and leakage current of 8.3 Multiplication-Sign 10{sup -4} A/cm{sup 2} at V{sub g} = 1 V are observed for the HfO{sub 2}/La{sub 2}O{sub 3} gate stack on Ge substrate. Black-Right-Pointing-Pointer The improvement in the interfacial and electrical properties is related to the formation of a stable LaGeO{sub x} interfacial layer. - Abstract: We report the characteristics of HfO{sub 2} films deposited on Ge substrates with and without La{sub 2}O{sub 3} passivation at 250 Degree-Sign C by atomic layer deposition (ALD) using La[N(SiMe{sub 3}){sub 2}]{sub 3} and Hf[N(CH{sub 3})(C{sub 2}H{sub 5})]{sub 4} as the precursors. The HfO{sub 2} is observed to form defective HfGeO{sub x} at its interface during 500 Degree-Sign C postdeposition annealing. The insertion of an ultrathin La{sub 2}O{sub 3} interfacial passivation layer effectively prevents the Ge outdiffusion and improves interfacial and electrical properties. Capacitance equivalent thickness (CET) of 1.35 nm with leakage current density J{sub A} of 8.3 Multiplication-Sign 10{sup -4} A/cm{sup 2} at V{sub g} = 1 V is achieved for the HfO{sub 2}/La{sub 2}O{sub 3} gate stacks on Ge substrates.

  7. Orientation and growth behavior of CaHfO3 thin films on non-oxide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Y. W. [University of Florida; Norton, David P. [University of Florida; Budai, John D [ORNL

    2007-01-01

    The growth behavior of CaHfO3 on (001) Ni and Ge substrates was examined. CaHfO3 is a perovskite insulator that is suitable for applications as a buffer layer or gate dielectric. The tendency for CaHfO3 growth on both (001) Ni and (001) Ge substrates is to orient with the CaHfO3 (200)+(121) planes parallel to the surface, which corresponds to the (110) orientation in the pseudo-cubic geometry. This differs from that of CaHfO3 on perovskites, such as (001) LaAlO3, where a pseudo-cube-on-cube orientation is observed.

  8. Reduced impurities and improved electrical properties of atomic-layer-deposited HfO{sub 2} film grown at a low temperature (100 °C) by Al{sub 2}O{sub 3} incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science and Engineering, University of Texas at Dallas, TX 75080 (United States); Department of Materials Science and Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Byun, Youngchol; Wallace, Robert M. [Department of Materials Science and Engineering, University of Texas at Dallas, TX 75080 (United States); Kim, Jiyoung, E-mail: jiyoung.kim@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, TX 75080 (United States)

    2016-05-15

    Highlights: • Incorporation of Al{sub 2}O{sub 3} in small amounts effectively reduced the residual impurity concentration in atomic-layer-deposited HfO{sub 2} film (Al:HfO{sub 2}). • Al:HfO{sub 2} film grown at 100 °C showed the electrical properties comparable with those of HfO{sub 2} film grown at 250 °C due to low impurity concentration. • The electronic band structures of various films were reconstructed based on X-ray photoelectron spectroscopy result. - Abstract: The HfO{sub 2} films grown by atomic layer deposition (ALD) at a low temperature (100 °C) necessarily has a large amount of residual impurities due to lack of thermal energy for stable ALD reactions such as ligand removal and oxidation, which degrades various properties. However, Al{sub 2}O{sub 3} incorporation into the film significantly decreased the residual impurities despite of a low growth temperature. The decrease in C impurity is attributed to the reduced oxygen vacancies by the incorporated Al{sub 2}O{sub 3} phase or the high reactivity of Al precursor. Consequently, the electronic band structure of the film, and thereby the electrical properties were improved significantly.

  9. Si掺杂HfO2薄膜的铁电和反铁电性质%Ferro electric and antiferro electric prop erties of Si-dop ed HfO2 thin films

    Institute of Scientific and Technical Information of China (English)

    周大雨; 徐进; Johannes Müller; Uwe Schröder

    2014-01-01

    通过改变Si掺杂量制备出了具有显著铁电和反铁电特征的HfO2纳米薄膜,对其电滞回线、电容-电压和漏电流-电压特性以及物相温度稳定性进行了对比研究。反铁电薄膜的介电系数大于铁电薄膜,在电场加载和减载过程中发生的可逆反铁电-铁电相变导致了双电滞回线的出现,在室温至185◦C的测试温度范围内未出现反铁电→顺电相变。在电流-电压特性测量时观察到的负微分电阻效应归因于极化弛豫等慢响应机理的贡献。%Ferroelectric and antiferroelectric HfO2 nano-films were prepared by changing silicon doping concentration, and their basic properties were compared in terms of polarization hysteresis, capacitance-voltage and leakage-voltage behavior, as well as the effect of temperature on phase stability. Antiferroelectric thin film exhibits a higher dielectric constant than the ferroelectric film, and is characterized by the double polarization hysteresis loops due to reversible antiferroelectric-ferroelectric phase transition induced during loading and unloading processes of electric field. No antiferroelectric-paraelectric phase transition is observed at measuring temperatures up to 185 ◦C. The negative differential resistivity effect observed in leakage measurements is attributed to the contributions from slow response mechanisms like polarization relaxation.

  10. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement

    Science.gov (United States)

    Kim, Han Joon; Park, Min Hyuk; Kim, Yu Jin; Lee, Young Hwan; Moon, Taehwan; Kim, Keum Do; Hyun, Seung Dam; Hwang, Cheol Seong

    2016-01-01

    The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy-related devices. Interestingly, these materials showed a ``wake-up effect'', which refers to the increase in remanent polarization with increasing electric field cycling number before the occurrence of the fatigue effect. In this work, the wake-up effect from Hf0.5Zr0.5O2 was carefully examined by the pulse-switching experiment. In the pristine state, the Hf0.5Zr0.5O2 film mostly showed FE-like behavior with a small contribution from AFE-like distortion, which could be ascribed to the involvement of the AFE phase. The field cycling of only 100 cycles almost completely transformed the AFE phase into the FE phase by depinning the pinned domains. The influence of field cycling on the interfacial layer was also examined through the pulse-switching experiments.

  11. SHI induced effects on the electrical and optical properties of HfO{sub 2} thin films deposited by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Manikanthababu, N.; Dhanunjaya, M.; Nageswara Rao, S.V.S.; Pathak, A.P., E-mail: appsp@uohyd.ernet.in

    2016-07-15

    The continuous downscaling of Metal Oxide Semiconductor (MOS) devices has reached a limit with SiO{sub 2} as a gate dielectric material. Introducing high-k dielectric materials as a replacement for the conservative SiO{sub 2} is the only alternative to reduce the leakage current. HfO{sub 2} is a reliable and an impending material for the wide usage as a gate dielectric in semiconductor industry. HfO{sub 2} thin films were synthesized by RF sputtering technique. Here, we present a study of Swift Heavy Ion (SHI) irradiation with100 MeV Ag ions for studying the optical properties as well as 80 MeV Ni ions for studying the electrical properties of HfO{sub 2}/Si thin films. Rutherford Backscattering Spectrometry (RBS), Field Emission Scanning Electron Microscope (FESEM), energy-dispersive X-ray spectroscopy (EDS), profilometer and I–V (leakage current) measurements have been employed to study the SHI induced effects on both the structural, electrical and optical properties.

  12. An infrared study of thin-film formation on Si and Ge surfaces treated with aqueous NH4F and HF

    Science.gov (United States)

    Yota, J.; Burrows, V. A.

    1991-05-01

    The surface chemistry of Si and Ge after treatment with hydrofluoric acid buffered with ammonium fluoride (BHF) was studied using surface infrared spectroscopy. For each of these materials, the BHF not only dissolved the native oxide, but also deposited a thin inorganic film comprised of ammonium salts (NH4F and NH4F.HF). Through one or more complex reactions with the substrate, these salts slowly disappear as the thermodynamically very stable hexafluorometallate compounds [(NH4)2SiF6 and (NH4)2GeF6] form. The NH4F.HF disappearance correlates directly with the hexafluorometallate formation. Though the original fluoride and bifluoride salts are quite soluble in alcohols as well as in aqueous solutions, the hexafluorometallates are completely insoluble in alcohols, and can only be removed by thorough water rinse.

  13. Structural, magnetic and electrical transport properties in electron-doped La0.85Hf0.15MnO3 epitaxial film

    Science.gov (United States)

    Han, Li-an; Ma, Zi-wei; Zhu, Hua-ze; Chen, Chang-le; Zhang, Tao

    2017-03-01

    Using a pulsed laser deposition method, the electron-doped La0.85Hf0.15MnO3 (LHMO) film with the thickness of 90 nm was epitaxially grown on LaAlO3 (001) single crystal substrate. The structural, magnetic and electrical transport properties of the film have been studied comprehensively. The X-ray diffraction patterns confirm that LHMO film is of single phase, good quality and c axis orientation. The film undergoes a ferromagnetic-like ordering to paramagnetic states at T C =280 K. Moreover, a spin glass behavior observed in the film may be attributed to the strain effects. Using the percolation theory, we have analyzed the resistivity data ρ (T) of the film and given an excellent fit in the whole temperature range. Particularly, large temperature coefficient of resistance of 11.27% K- 1 has been discovered near sub-room-temperature, indicating that LHMO film could be useful for bolometric applications.

  14. Influence of grain growth on the high-frequency behaviour of ferromagnetic Fe-Co-(M)-N (M=Ta, Hf) nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material for schung I, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)], E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material for schung I, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

    2009-04-15

    The CMOS compatible ferromagnetic Fe-Co-(M)-N (M=Ta, Hf) films were investigated with regard to their grain size-dependent frequency behaviour. Predominantly Fe{sub 33}Co{sub 40}Ta{sub 10}N{sub 17} films were deposited by reactive r.f. magnetron sputtering. These films were compared to Fe{sub 36}Co{sub 44}Hf{sub 9}N{sub 11} films. In order to induce an in-plane uniaxial anisotropy H{sub u} as well as to investigate the grain growth behaviour, the films were annealed in a static magnetic field. The in-plane uniaxial anisotropy field of around 4 mT as well as a good soft magnetic behaviour with a saturation polarisation of approximately 1.2-1.4 T could be observed after heat treatment. Ferromagnetic resonance frequencies (FMR) of approximately up to 2.4 GHz could be achieved according to the Kittel theory. Depending on the heat treatment, high-frequency losses through energy dissipation was made conspicuous by means of the full-width at half-maximum (FWHM) {delta}f{sub eff} of the imaginary part of the frequency-dependent permeability which was between 0.4 and 1 GHz. This FWHM was basically discussed in terms of two-magnon scattering theories, in combination with the Herzer random anisotropy model. In order to correlate the resonance line broadening with a phenomenological damping parameter {alpha}{sub eff}, which ranged from about 0.0125 to 0.028, the modified Landau-Lifschitz-Gilbert equation was used to fit and describe the permeability spectra of the ferromagnetic films.

  15. Large critical current densities and pinning forces in CSD-grown superconducting GdBa2Cu3O7-x -BaHfO3 nanocomposite films

    Science.gov (United States)

    Cayado, Pablo; Erbe, Manuela; Kauffmann-Weiss, Sandra; Bühler, Carl; Jung, Alexandra; Hänisch, Jens; Holzapfel, Bernhard

    2017-09-01

    GdBa2Cu3O7-x -BaHfO3 (GdBCO-BHO) nanocomposite (NC) films containing 12 mol% BHO nanoparticles were prepared by chemical solution deposition (CSD) following the TFA route on SrTiO3 (STO) single crystals and buffered metallic tapes supplied by two different companies: Deutsche Nanoschicht GmbH and SuperOx. We optimized the preparation of our GdBCO-BHO solutions with acetylacetone making the film synthesis very robust and reproducible, and obtained 220 nm films with excellent superconducting properties. We show the structural, morphological and superconducting properties of the films after a careful optimization of the processing parameters (growth temperature, oxygen partial pressure and heating ramp). The films reach critical temperatures (T c) of ˜94 K, self-field critical current densities (J c) of >7 MA cm- 2 and maximum pinning force densities (F p) of ˜16 GN m- 3 at 77 K on STO and T c of ˜94.5 K and J c > 1.5 MA cm- 2 on buffered metallic tapes. The transport properties under applied magnetic fields are significantly improved with respect to the pristine GdBCO films. The GdBCO-BHO NC films on STO present epitaxial c-axis orientation with excellent out-of-plane and in-plane texture. The films are, in general, very dense with a low amount of pores and only superficial indentations. On the other hand, we present, for the first time, a systematic study of CSD-grown GdBCO-BHO NC films on buffered metallic tapes. We have used the optimized growth conditions for STO as a reference and identified some limitations on the film synthesis that should be overcome for further improvement of the films’ superconducting properties.

  16. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    Science.gov (United States)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  17. Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

    Science.gov (United States)

    Lee, Young Hwan; Kim, Han Joon; Moon, Taehwan; Do Kim, Keum; Dam Hyun, Seung; Park, Hyeon Woo; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

    2017-07-01

    HfO2-ZrO2 solid-solution films were prepared by radio frequency sputtering, and the subsequent annealing process was optimized to render enhanced ferroelectric behavior. The target power, working pressure and O2 partial pressure ratios were varied, along with the annealing gas, time and temperature. Then, the film’s structural and electrical properties were carefully scrutinized. Oxygen-deficient conditions were necessary during the sputter deposition to suppress grain growth, while annealing by O2 gas was critical to avoid defects and leakage problems. It is expected that the grain size difference under various deposition conditions combined with the degree of TiN top and bottom electrode oxidation by O2 gas will result in different ferroelectric behaviors. As a result, Hf0.5Zr0.5O2 prepared by radio frequency sputtering showed optimized ferroelectricity at 0% of O2 reactive gas, with a doubled remnant polarization value of ˜20 μC cm-2 at a thickness of 11 nm. Film growth conditions with a high growth rate (4-5 nm min-1) were favorable for achieving the ferroelectric phase film, which feasibly suppressed both the grain growth and accompanying monoclinic phase formation.

  18. Determination of intrinsic FMR line broadening in ferromagnetic (Fe{sub 44}Co{sub 56}){sub 77}Hf{sub 12}N{sub 11} nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K., E-mail: klaus.seemann@kit.ed [Karlsruhe Institute of Technology (KIT), Institute for Materials Research I, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany); Leiste, H.; Klever, Ch. [Karlsruhe Institute of Technology (KIT), Institute for Materials Research I, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

    2010-10-15

    Ferromagnetic nanocomposite (Fe{sub 44}Co{sub 56}){sub 77}Hf{sub 12}N{sub 11} films were deposited to investigate their intrinsic damping mechanisms due to scattering of itinerant electrons, which carry the magnetic moment of the ferromagnetic transition elements. The films were produced by reactive r.f. magnetron sputtering using a 6 in. Fe{sub 37}Co{sub 46}Hf{sub 17} target. They were annealed at 400 {sup o}C in a static magnetic field, in order to induce in-plane uniaxial anisotropy. Subsequently, the films can be considered as uniformly magnetised. A ferromagnetic resonance frequency (FMR) of around 2.3 GHz could be attained, which was determined by measuring the real and imaginary parts of the frequency dependent permeability up to 5 GHz. The imaginary part, which represents a typical resonance curve, was utilised to obtain its full-width at half-maximum {Delta}f{sub eff} (FWHM) for the total damping behaviour characterisation. Thereby, it is possible to extract the intrinsic Gilbert damping parameter {alpha}{sub int}, which in turn can be decomposed into two additional damping terms {alpha}{sub sf} and {alpha}{sub os} allocated to 'spin-flip' and 'ordinary scattering', respectively. This result is correlated and discussed in terms of a verified theoretic model, to identify whether damping due to spin-flip scattering and/or ordinary scattering is dominant.

  19. Ti/Cu bilayer electrodes for SiNx-passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance

    Science.gov (United States)

    Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Lee, Eunha; Jung, Ji Sim; Lee, Kwang-Hee; Maeng, Wan-Joo; Kim, Hyun-Suk; Kim, Eok Su; Park, Kyung-Bae; Kwon, Jang-Yeon; Ryu, Myung Kwan; Lee, Sang Yoon

    2010-10-01

    In this study, we examine the possibility of using Ti/Cu bilayer as source/drain electrodes for SiNx-passivated Hf-In-Zn-O (HIZO) thin film transistors by comparing their electrical properties with devices that use Mo electrodes. The Mo devices operate in depletion mode with a higher field effect mobility, while the Ti/Cu devices exhibit an improved subthreshold swing and operate in enhancement mode. Transmission electron microscopy characterization reveals the formation of an amorphous TiOx layer at the Ti/HIZO interface, which is suggested to be responsible for the disparate device characteristics in terms of contact resistance and threshold delay.

  20. Morphology and performances of the anodic oxide films on Ti6Al4V alloy formed in alkaline-silicate electrolyte with aminopropyl silane addition under low potential

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiali; Wang, Jinwei, E-mail: wangjw@ustb.edu.cn; Yuan, Hongye

    2013-11-01

    Oxide films on Ti6Al4V alloy are prepared using sodium hydroxide–sodium silicate as the base electrolyte with addition of aminopropyl trimethoxysilane (APS) as additive by potentiostatic anodizing under 10 V. APS is incorporated into the films during anodizing and the surface morphology of the oxide films is changed from particle stacked to honeycomb-like porous surfaces as shown by scanning electron microscopy (SEM) with Energy Disperse Spectroscopy (EDX). The surface roughness and aminopropyl existence on the oxide films result in their differences in wettability as tested by the surface profile topography and contact angle measurements. The anti-abrasive ability of the anodic films is improved with the addition of APS due to its toughening effects and serving as lubricants in the ceramic oxide films as measured by ball-on-disk friction test. Also, potentiodynamic corrosion test proves that their anticorrosive ability in 3.5 wt.% NaCl is greatly improved as reflected by their much lower corrosion current (I{sub corr}) and higher corrosion potential (E{sub corr}) than those of the substrate.

  1. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    Science.gov (United States)

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  2. Development and optimisation of thin soft ferromagnetic Fe-Co-Ta-N and Fe-Co-Al-N films with in-plane uniaxial anisotropy for HF applications

    Energy Technology Data Exchange (ETDEWEB)

    Bekker, V. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Seemann, K. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)]. E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2006-01-15

    Thin ferromagnetic Fe-Co-Ta-N and Fe-Co-Al-N films with strong in-plane uniaxial anisotropy were successfully prepared by RF reactive magnetron sputtering and subsequent vacuum field annealing. The magnetic properties of as-deposited and field annealed films were investigated in order to optimise the deposition and annealing conditions. The films exhibit good soft magnetic properties and an excellent thermal stability because of their nanocrystalline microstructure. The critical temperature of degradation of the magnetic properties is around 500{sup o}C; therefore, the films can be integrated in a standard semiconductor CMOS process. After a 1-h heat treatment at 400{sup o}C, the following magnetic properties were achieved: saturation polarisation J{sub s}=1.2T, coercive field {mu}{sub 0}H{sub c}=0.3mT, electrical resistivity {rho}=2x10{sup -6}{omega}m, anisotropy field {mu}{sub 0}H{sub a}=3.5-5mT. This results in a ferromagnetic resonance frequency of f{sub r}=1.8-2.1GHz and initial permeability of {mu}{sub low}=400-300. The influence of intrinsic material parameters, such as saturation polarisation, uniaxial anisotropy field, electrical resistivity and film thickness, on HF permeability was analysed. The frequency-dependent permeability spectra were measured up to 4.5GHz with a strip line parameter.

  3. Fabrication and examination of epitaxial HTSC/isolator thin films on sapphire substrates for application in high frequency devices; Herstellung und Untersuchung von epitaktischen HTSL/Isolator-Schichten auf Saphirsubstraten zur Anwendung in HF-Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Kittel, H.

    1995-10-01

    The use of high temperature superconductors (HTSC) like YBCO with distinct lower surface resistance compared to normal conductors allows miniaturisation of high frequency (HF) circuits. The object of this work was the fabrication of YBCO thin films on low loss sapphire substrates applicable for stripline devices. To induce epitaxial growth and to avoid chemical reaction at the film-substrate boundary buffer layers were investigated. The examination of the growth properties and especially of the surface impedance has been allotted particular importance. In contrast to CaTiO{sub 3} it was possible to deposit CeO{sub 2}-buffer layers in direct growth up to a thickness of about 30 nm without cracks. The films show all growth properties required and even Laue-oscillations being a feature of high quality growth enabling the determination of film thickness distribution without destruction. The YBCO growth-, transport- and HF-properties meet the ones of YBCO films on standard substrates. A remarkable result is that the mosaic distribution of the CEO film, itself strongly dependend on film thickness, does not influence that of the YBCO film considerably. Rather it changes its shape subsequently due to YBCO deposition. A further particularity in contrast to deposition on standard substrates is the need to adjust the substrate heater tempeature for deposition of YBCO films with thicknesses {>=}300 nm needed for HF application. To demonstrate their usefullness some stripline devices like planar coils and side coupled filters have been fabricated and characterised. (orig.)

  4. Grain size engineering for ferroelectric Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films by an insertion of Al{sub 2}O{sub 3} interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Joon; Park, Min Hyuk; Kim, Yu Jin; Lee, Young Hwan; Jeon, Woojin; Gwon, Taehong; Moon, Taehwan; Kim, Keum Do; Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744 (Korea, Republic of)

    2014-11-10

    The degradation of ferroelectric (FE) properties of atomic layer deposited Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films with increasing thickness was mitigated by inserting 1 nm-thick Al{sub 2}O{sub 3} interlayer at middle position of the thickness of the FE film. The large P{sub r} of 10 μC/cm{sup 2}, which is 11 times larger than that of single layer Hf{sub 0.5}Zr{sub 0.5}O{sub 2} film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al{sub 2}O{sub 3} interlayer could interrupt the continual growth of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films, and the resulting decrease of grain size prevented the formation of non-ferroelectric monoclinic phase. The Al{sub 2}O{sub 3} interlayer also largely decreased the leakage current of the Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films.

  5. Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO{sub 2}/Si gate stack

    Energy Technology Data Exchange (ETDEWEB)

    Gao, J. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); School of Sciences, Anhui University of Science and Technology, Huainan 232001 (China); He, G., E-mail: ganghe01@issp.ac.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Zhang, J.W.; Deng, B.; Liu, Y.M. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China)

    2015-10-25

    Sputtering-derived HfO{sub 2} high-k gate dielectric thin films have been deposited on Si substrate by means of high vacuum physics vapor deposition method. Via characterization from x-ray photoelectron spectroscopy (XPS) and electrical measurements, the effect of post-deposition annealing temperature on the interfacial and electrical properties of HfO{sub 2}/Si gate stack has been investigated. XPS analyses show that an interfacial layer between HfO{sub 2} and silicon substrate has been found in the post-deposition annealing process. Increase in Hf-silicate layer and reduction in SiO{sub 2} low-k interface layer have been detected. Electrical measurements of MOS capacitor based on Al/HfO{sub 2}/Si gate stacks indicate that annealing HfO{sub 2} sample at 300 °C demonstrated the improved electrical performance. As a result, the leakage current of 3.60 × 10{sup −5} A/cm{sup 2} at applied substrate voltage of 2 V, which is much lower than those samples annealed at other temperature, has been obtained. The leakage current mechanism for different annealing temperature has been discussed systematically. - Highlights: • Sputtering-derived HfO{sub 2}/Si gate stack has been deposited on Si substrate. • Annealing lead to the increase in Hf silicate layer and reduction in SiO{sub 2} interface layer. • For substrate injection, Schottky emission dominates the conduction mechanism at the low fields. • For gate injection, Poole–Frenkle emission dominates the conduction mechanism at the high field.

  6. Effects of TiN film coating on electrochemical behaviors ofnanotube formed Ti-xHf alloys

    Institute of Scientific and Technical Information of China (English)

    Kang LEE; Won-Gi KIM; Joo-Young CHO; Sang-Won EUN; Han-Cheol CHOE

    2009-01-01

    Ti-xHf (x=10%, 20%, 30% and 40%, mass fraction) alloys were prepared by arc melting, and the microstructure was controlled for 24 h at 1 000 ℃ in argon atmosphere. The formation of nanotube was conducted by anodizing on Ti-Hf alloys in 1.0 mol/L H3PO4 electrolytes with small amounts of NaF at room temperature. And then TiN coatings were coated by DC-sputtering on the anodized surface. Microstructures and nanotube morphology of the alloys were examined by field emission scanning electron microscopy(FE-SEM) and X-ray diffractometry(XRD). The corrosion properties of the specimens were examined through potentiodynamic test (potential range from -1 500 to 2 000 mV) in 0.9 % NaCl solution by potentiostat. The microstructure shows the acicular phase and α′ phase with Hf content. The amorphous oxide surface is transformed to crystalline anatase phase. TiN coated nanotube surface has a good corrosion resistance.

  7. Production of HfO2 thin films using different methods: chemical bath deposition, SILAR and sol-gel process

    Science.gov (United States)

    Kariper, İ. A.

    2014-08-01

    Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The optical properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

  8. Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode

    Science.gov (United States)

    Shimizu, Takao; Yokouchi, Tatsuhiko; Shiraishi, Takahisa; Oikawa, Takahiro; Sankara Rama Krishnan, P. S.; Funakubo, Hioshi

    2014-09-01

    The effect of the heat treatment conditions on the constituent phases and electrical properties of (Hf0.5Zr0.5)O2 films deposited by the metalorganic chemical vapor deposition was investigated. By using a low temperature or short duration for post-heat treatment after the deposition, the volume fraction of the tetragonal phase increases, resulting in a high dielectric constant. On the other hand, the volume fraction of the monoclinic phase increased in the films that were heat-treated at higher temperatures and exposed to longer heat treatment duration. The ferroelectric with and dielectric properties of these films were greatly inferior. Superior ferroelectric properties a significant volume fraction of orthorhombic phase were achieved for intermediate heat treatment conditions. These results give useful information to understand the origin of the ferroelectricity and to control the phases and electrical properties in HfO2-based films.

  9. Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique

    Directory of Open Access Journals (Sweden)

    W. Lu

    2014-08-01

    Full Text Available A memory structure Pt/Al2O3/Hf0.5Zr0.5O2/Al2O3/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM. By measuring the applied gate voltage dependence of the capacitance for the memory structure, the planar density of the trapped charges in Hf0.5Zr0.5O2 high-k film was estimated as 6.63 × 1012 cm−2, indicating a body defect density of larger than 2.21 × 1019 cm−3. It is observed that the post-annealing in N2 can reduces the defect density in Hf0.5Zr0.5O2 film, which was ascribed to the occupancy of oxygen vacancies by nitrogen atoms.

  10. Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer

    Institute of Scientific and Technical Information of China (English)

    张心强; 屠海令; 魏峰; 熊玉华; 杨萌萌; 赵洪滨; 杜军; 王文武

    2013-01-01

    The GHO (Gd2O3-doped HfO2) films were epitaxially grown on Ge (001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to (001)GHO//(001)Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness (0.49 nm) and inter-face state density (7×1011 cm-2) were achieved from Au/Ti/GHO/Ge/Al capacitors.

  11. Study of the picosecond laser damage in HfO2/SiO2-based thin-film coatings in vacuum

    Science.gov (United States)

    Kozlov, A. A.; Papernov, S.; Oliver, J. B.; Rigatti, A.; Taylor, B.; Charles, B.; Smith, C.

    2016-12-01

    The laser damage thresholds of various HfO2/SiO2-based thin film coatings, including multilayer dielectric (MLD) gratings and high reflectors of different designs, prepared by E-beam and Plasma Ion Assisted Deposition (PIAD) methods, were investigated in vacuum, dry nitrogen, and after air-vacuum cycling. Single and multiple-pulse damage thresholds and their pulse-length scaling in the range of 0.6 to 100 ps were measured using a vacuum damage test station operated at 1053nm. The E-beam deposited high reflectors showed higher damage thresholds with square-root pulse-length scaling, as compared to PIAD coatings, which typically show slower power scaling. The former coatings appeared to be not affected by air/vacuum cycling, contrary to PIAD mirrors and MLD gratings. The relation between 1-on-1 and N-on-1 damage thresholds was found dependent on coating design and deposition methods.

  12. Evenly distributed thin-film Ag coating on stainless plate by tricomponent Ag/silicate/PU with antimicrobial and biocompatible properties.

    Science.gov (United States)

    Huang, Yi-Hsiu; Chen, Mark Hung-Chih; Lee, Bing-Heng; Hsieh, Kuo-Huang; Tu, Yuan-Kun; Lin, Jiang-Jen; Chang, Chih-Hao

    2014-11-26

    A tricomponent nanohybrid dispersion in water comprising silver nanoparticles (AgNP), nanometer-thick silicate platelets (NSP), and water-based polyurethane (PU) was developed for surface coating on orthopedic metal plates. The previously developed AgNP-on-NSP nanohybrid was homogeneously blended into a selected waterborne PU dispersion at varied weight ratios from 1/0.1 to 1/10 (w/w). PU was used to adhere the Ag nanohybrid to the metal surface. The resultant dispersions were analyzed and found to contain AgNP 2-18 nm in diameter and characterized by using UV absorption and TEM micrograph. The subsequent coating of AgNP/NSP-PU dispersion generated a film of 1.5 μm thickness on the metal plate surface, further characterized by an energy dispersive spectroscope (EDS) to show the homogeneous distribution of Ag, Si, and C elements on the metal plates. The surface antimicrobial efficacy was proven for the coating composition of AgNP/NSP to PU ranging from 1/1 to 1/5 by weight ratio but irrelevant to the thickness of the coated materials. The metal plate coated with the high Ag content at 1/1 (w/w) ratio was shown to have very low cytotoxicity toward the contacted mammal fibroblasts. Overall, the optimized tricomponent Ag/silicate/PU in water dispersion from 1/2 to 1/3 (w/w) could generate a stable film on a metal surface exhibiting both antimicrobial and biocompatible properties. The facile coating technique of the AgNP/NSP in waterborne PU is proven to be viable for fabricating infection- and cytotoxicity-free medical devices.

  13. Effect of Hf addition on critical current density of (Y,Eu)Ba2Cu3.6O7-δ thin films prepared by trifluoroacetate metal organic deposition

    Science.gov (United States)

    Li, M. Y.; Liu, Z. Y.; Fang, Q.; Guo, Y. Q.; Lu, Y. M.; Bai, C. Y.; Cai, C. B.

    2016-12-01

    The critical current density (Jc) performance of YBCO coated conductors (CCs) under magnetic field has become a considerable limitation for its commercial application in recent years. It is well known that the proper amount of element doping into the CCs is a convenient method to increase flux pinning and then to enhance the Jc. In the present work, we firstly introduce the co-doping of Eu and Hf and study the effect on the performance of YBa2Cu3.6O7-δ thin films. Three types of high temperature superconducting thin films, i.e., YBa2Cu3.6O7-δ, (Y,Eu)Ba2Cu3.6O7-δ and Hf doped (Y,Eu)Ba2Cu3.6O7-δ were prepared on the oxide buffered metallic substrates by using trifluoroacetate metal organic deposition (TFA-MOD). The component and structure of the as-prepared samples were characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM) and atomic force microscopy (AFM). Superconducting properties were measured with a SQUID magnetometer. It was revealed that the (Y,Eu)Ba2Cu3.6O7-δ thin films exhibit better out-plane and in-plane texture compared with the pure YBa2Cu3.6O7-δ thin film. The Jc of (Y,Eu)Ba2Cu3.6O7-δ thin film was improved compared with pure YBCO thin film. In case of Hf doping, however, the biaxial texture became worse while the in-field Jc performance was enhanced, implying the increase of flux pinning with proper Hf addition.

  14. Si{sub 1-x}Ge{sub x} metal-oxide-semiconductor capacitors with HfTaO{sub x} gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Mallik, S., E-mail: sandi.iitkgp@gmail.com [Dept. of Electronics and ECE, Indian Institute of Technology, Kharagpur 721302 (India); Mahata, C.; Hota, M.K. [Dept. of Electronics and ECE, Indian Institute of Technology, Kharagpur 721302 (India); Sarkar, C.K. [Dept. of Electronics and Telecommunication Engineering, Jadavpur University, Jadavpur, Kolkata 700032 (India); Maiti, C.K. [Dept. of Electronics and ECE, Indian Institute of Technology, Kharagpur 721302 (India)

    2011-10-31

    Interfacial reactions and electrical properties of RF sputter deposited HfTaO{sub x} high-k gate dielectric films on Si{sub 1-x}Ge{sub x} (x = 19%) are investigated. X-ray photoelectron spectroscopic analyses indicate an interfacial layer containing GeO{sub x}, Hf silicate, SiO{sub x} (layer of Hf-Si-Ge-O) formation during deposition of HfTaO{sub x}. No evidence of Ta-silicate or Ta incorporation was found at the interface. The crystallization temperature of HfTaO{sub x} film is found to increase significantly after annealing beyond 500 deg. C (for 5 min) along with the incorporation of Ta. HfTaO{sub x} films (with 18% Ta) remain amorphous up to about 500 deg. C anneal. Electrical characterization of post deposition annealed (in oxygen at 600 deg. C) samples showed; capacitance equivalent thickness of {approx} 4.3-5.7 nm, hysteresis of 0.5-0.8 V, and interface state density = 1.2-3.8 x 10{sup 12} cm{sup -2} eV{sup -1}. The valence and conduction band offsets were determined from X-ray photoelectron spectroscopy spectra after careful analyses of the experimental data and removal of binding energy shift induced by differential charging phenomena occurring during X-ray photoelectron spectroscopic measurements. The valence and conduction band offsets were found to be 2.45 {+-} 0.05 and 2.31 {+-} 0.05 eV, respectively, and a band gap of 5.8 {+-} 05 eV was found for annealed samples.

  15. Electrochemiluminescent determination of methamphetamine based on tris(2,2'-bipyridine)ruthenium(II) ion-association in organically modified silicate films

    Energy Technology Data Exchange (ETDEWEB)

    Yi Changqing [Key Laboratory of Analytical Sciences of Ministry of Education, Department of Chemistry, Xiamen University, Xiamen 361005 (China); Tao Yin [Key Laboratory of Analytical Sciences of Ministry of Education, Department of Chemistry, Xiamen University, Xiamen 361005 (China); Wang Bo [Institute of Criminal Science and Technology of Xiamen, Xiamen 361005 (China); Chen Xi [Key Laboratory of Analytical Sciences of Ministry of Education, Department of Chemistry, Xiamen University, Xiamen 361005 (China)]. E-mail: xichen@xmu.edu.cn

    2005-06-13

    Tetramethoxysilane (TMOS) and dimethyldimethoxysilane (DiMe-DiMOS) were used as co-precursor to immobilize poly(p-styrenesulfonate) (PSS), then tris(2,2'-bipyridine)ruthenium(II) (Ru(bpy){sub 3} {sup 2+}) was successfully immobilized on a glass carbon electrode via ion-association. The immobilized Ru(bpy){sub 3} {sup 2+} shows good electrochemical and photochemical activities. Electrochemical and electrochemiluminescence (ECL) characterizations of the organically modified silicates (ORMOSILs) modified film electrodes were made by means of cyclic voltammetry and chronocoulometry. The ORMOSIL films were investigated by atomic force microscopy, scanning electrochemical microscope, tunnelling electrochemical microscope, X-ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and fluorescence spectroscopy. XPS in-depth profiles revealed a homogeneous distribution of Ru(bpy){sub 3} {sup 2+} inside the silica thin layers. The modified electrode was used for the ECL determination of methamphetamine (METH) and showed high sensitivity. Detection limit was 2.0 x 10{sup -7} mol l{sup -1} for METH (S/N = 3) with a linear range from 5.0 x 10{sup -7} to 1.0 x 10{sup -3} mol l{sup -1} (R = 0.986). The relative standard deviation (n = 6) was 1.1% for the determination of 1.0 x 10{sup -5} mol l{sup -1} METH. Furthermore, the Ru(bpy){sub 3} {sup 2+} immobilized modified electrode was applied in the ECL determination of methamphetamine (METH) in scout cases.

  16. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric MIM structures

    Energy Technology Data Exchange (ETDEWEB)

    Kozodaev, M.G.; Chernikova, A.G.; Markeev, A.M. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); Lebedinskii, Y.Y. [Moscow Institute of Physics and Technology, Institutsky Lane 9, Dolgoprudny, Moscow Region 141700 (Russian Federation); National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoye Shosse 31, 115409 Moscow (Russian Federation); Polyakov, S.N. [Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya str. 7a, 142190, Troitsk, Moscow (Russian Federation)

    2017-06-15

    In this work chemical and electrical properties of TiN films, grown by low temperature plasma-enhanced atomic layer deposition (PE-ALD) process from TiCl{sub 4} and NH{sub 3}, were investigated. Electrical resistivity as low as 250 μOhm x cm, as well as the lowest Cl impurity content, was achieved at 320 C. Full-ALD Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based metal-ferroelectric-metal capacitor with TiN electrodes was fabricated and its electrical properties were investigated. It was also shown that the proposed PE-ALD process provides an early film continuity, which was confirmed by ultrathin fully continuous film growth. Such ultrathin (3 nm) and fully continuous TiN film was also successfully implemented as the top electrode to Hf{sub 0.5}Zr{sub 0.5}O{sub 2}-based ferroelectric capacitor. Angle-resolved X-ray photoelectron spectroscopy (AR-XPS) was used for its thickness determination and a visible wake-up effect in underlying Hf{sub 0.5}Zr{sub 0.5}O{sub 2} layer was clearly observed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Interfacial Layer Growth Condition Dependent Electrical Conduction in HfO2/SiO2 Heterostructured Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, S. K.; Misra, D.

    2012-01-01

    The electrical conduction mechanism contributing to the leakage current at different field regions has been studied in this work. The current-voltage (I-V) measurement of TiN/HfO{sub 2}/SiO{sub 2}/P-Si nMOS capacitor has been taken for two different interfacial layer (SiO{sub 2}) growth conditions such as in situ steam grown (ISSG) and chemical processes. It is observed that Poole-Frenkel mechanism is the dominant conduction mechanism in high field region whereas Ohmic conduction is dominant in the low field region. Also it is seen that the gate leakage current is reduced for the devices having chemically grown interfacial layer compared to that of ISSG devices. Both trap energy level ({phi}{sub t}) and activation energy (E{sub a}) increase in the chemically grown interfacial layer devices for the Poole-Frenkel and Ohmic conduction mechanisms respectively in comparison to ISSG devices. Trap energy level ({phi}{sub t}) of {approx} 0.2 eV, obtained from Poole-Frenkel mechanism indicates that the doubly ionized oxygen vacancies (V{sup 2-}) are the active defects and are contributing to the leakage current in these devices.

  18. On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.

    Science.gov (United States)

    Lim, Nomin; Efremov, Alexander; Yeom, Geun Young; Kwon, Kwang-Ho

    2014-12-01

    The study of etching characteristics and mechanisms for HfO2 and Si in CF4/O2/Ar and CHF3/O2/Ar inductively-coupled plasmas was carried out. The etching rates of HfO2 thin films as well as the HfO2/Si etching selectivities were measured as functions of Ar content in a feed gas (0-50% Ar) at fixed fluorocarbon gas content (50%), gas pressure (6 mTorr), input power (700 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters as well as the differences in plasma chemistries for CF4- and CHF3-based plasmas were analyzed using Langmuir probe diagnostics and 0-dimensional plasma modeling. It was found that, in both gas systems, the non-monotonic (with a maximum at about 15-20% Ar) HfO2 etching rate does not correlate with monotonic changes of F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the HfO2 etching process is affected by the factors determining the formation and decomposition kinetics of the fluorocarbon polymer layer. These factor are the fluxes of CF(x) (x = 1, 2) radicals, O atoms and H atoms.

  19. On the comparison of the polarisation behaviour of exchange-biased AF/F NiMn/Fe 37Co 48Hf 15 bi-layer and multi-layer films with increased ferromagnetic cut-off frequencies

    Science.gov (United States)

    Seemann, K.; Leiste, H.; Krüger, K.

    2012-03-01

    Antiferromagnetic/ferromagnetic (AF/F) NiMn/Fe37Co48Hf15 films were investigated with respect to their exchange bias, in-plane unidirectional anisotropy, polarisation and high frequency behaviour. After deposition, carried out by r.f. magnetron sputtering, the films were post-annealed for 4 h at 300 °C in a static magnetic field, in order to induce exchange-bias, which results in a unidirectional anisotropy. Dependent on the presence of a bi-layer or multi-layer sandwich structure the films show a different exchange-bias field-ferromagnetic inter-layer thickness behaviour with exchange-bias fields μ0*Heb between 2 and 10 mT. The in-plane uniaxial (single film) or unidirectional anisotropy fields μ0*HUF were between 4 and 18 mT. This results in a significant increase of the cut-off frequency in the GHz range in comparison to a single Fe37Co48Hf15 film, which is shown by frequency-dependent permeability plots. High damping in the imaginary part of the permeability, i.e., high resonance line broadening could be observed for films with high coercivity μ0*Hc of around 7 mT in the easy axis of magnetisation.

  20. Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1-xZrxO2/Al2O3 thin film stacks

    Science.gov (United States)

    Dey, Sonal; Tapily, Kandabara; Consiglio, Steven; Clark, Robert D.; Wajda, Cory S.; Leusink, Gert J.; Woll, Arthur R.; Diebold, Alain C.

    2016-09-01

    Using a five-step atomic layer deposition (ALD)-anneal (DADA) process, with 20 ALD cycles of metalorganic precursors followed by 40 s of rapid thermal annealing at 1073 K, we have developed highly crystalline Hf1-xZrxO2 (0 ≤ x ≤ 1) thin films (DADA ALD process. We surmise that the interfacial metal germanate layer also function as a diffusion barrier limiting excessive Ge uptake into the dielectric film. An ALD Al2O3 passivation layer of thickness ≥1.5 nm is required to minimize Ge diffusion for developing highly conformal and textured HfO2 based higher-k dielectrics on Ge substrates using the DADA ALD process.

  1. Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor

    Science.gov (United States)

    Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Kim, Wandong; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook

    2011-02-01

    Negative bias-induced instability of amorphous hafnium indium zinc oxide (α-HIZO) thin film transistors (TFTs) was investigated at various temperatures. In order to examine temperature-induced effects, fabricated TFTs with different combinations of gate insulator and gate metal were stressed by a negative gate bias at various temperatures. As a result, it is proved that negative bias-induced hole-trapping in the gate insulators and temperature-enhanced electron injection from the gate metals occurs at the same time at all temperatures, and the instability of HIZO TFT is more affected by the dominant factor out of the two mechanisms.

  2. Effect of Hf addition on critical current density of (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films prepared by trifluoroacetate metal organic deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, M.Y., E-mail: limengyaorz@163.com [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Liu, Z.Y. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China); Fang, Q. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Guo, Y.Q.; Lu, Y.M.; Bai, C.Y. [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China); Cai, C.B., E-mail: cbcai@t.shu.edu.cn [Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, 99 Shangda Road, Shanghai University, Shanghai 200444 (China); Shanghai Creative Superconductor Technologies Co. Ltd., Shanghai 201401 (China)

    2016-12-15

    Highlights: • This work firstly introduce the Eu and Hf co-doping effect on the performance of YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films, prepared on oxide buffered metallic substrates by trifluoroacetate metal organic deposition (TFA-MOD). • (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} film showed a very different surface morphology, smooth and regular, compared to YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film, which has never been reported before. • The J{sub c} value under self-field of (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film was obviously improved compared to YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film. • (Y, Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin film with Hf addition exhibited enhancement of J{sub c} value under magnetic fields. - Abstract: The critical current density (J{sub c}) performance of YBCO coated conductors (CCs) under magnetic field has become a considerable limitation for its commercial application in recent years. It is well known that the proper amount of element doping into the CCs is a convenient method to increase flux pinning and then to enhance the J{sub c}. In the present work, we firstly introduce the co-doping of Eu and Hf and study the effect on the performance of YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films. Three types of high temperature superconducting thin films, i.e., YBa{sub 2}Cu{sub 3.6}O{sub 7-δ}, (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} and Hf doped (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} were prepared on the oxide buffered metallic substrates by using trifluoroacetate metal organic deposition (TFA-MOD). The component and structure of the as-prepared samples were characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM) and atomic force microscopy (AFM). Superconducting properties were measured with a SQUID magnetometer. It was revealed that the (Y,Eu)Ba{sub 2}Cu{sub 3.6}O{sub 7-δ} thin films exhibit better out-plane and in-plane texture compared with the pure YBa{sub 2}Cu{sub 3.6}O{sub 7-δ} thin

  3. Titanium dioxide-gold nanocomposite materials embedded in silicate sol-gel film catalyst for simultaneous photodegradation of hexavalent chromium and methylene blue

    Energy Technology Data Exchange (ETDEWEB)

    Pandikumar, Alagarsamy [Centre for Photoelectrochemistry, School of Chemistry, Madurai Kamaraj University, Madurai 625021 (India); Ramaraj, Ramasamy, E-mail: ramarajr@yahoo.com [Centre for Photoelectrochemistry, School of Chemistry, Madurai Kamaraj University, Madurai 625021 (India)

    2012-02-15

    Graphical abstract: Aminosilicate sol-gel supported TiO{sub 2}-Au nanocomposite material photocatalyst was prepared by deposition-precipitation method and used for the simultaneous oxidation and reduction of methyelene blue dye and Cr(VI) ions. Highlights: Black-Right-Pointing-Pointer The EDAS/(TiO{sub 2}-Au){sub nps} is used to design the solid-phase thin film photocatalyst. Black-Right-Pointing-Pointer Au promotes the interfacial electron transfer from TiO{sub 2} to Cr(VI) to form Cr(III). Black-Right-Pointing-Pointer The holes produced at the TiO{sub 2} oxidize the MB dye. Black-Right-Pointing-Pointer The EDAS/(TiO{sub 2}-Au){sub nps} film was used for the simultaneous oxidation and reduction of toxic molecules. Black-Right-Pointing-Pointer The photoinduced simultaneous redox process provides dual benefit for the environment remediation. - Abstract: Aminosilicate sol-gel supported titanium dioxide-gold (EDAS/(TiO{sub 2}-Au){sub nps}) nanocomposite materials were synthesized by simple deposition-precipitation method and characterized. The photocatalytic oxidation and reduction activity of the EDAS/(TiO{sub 2}-Au){sub nps} film was evaluated using hexavalent chromium (Cr(VI)) and methylene blue (MB) dye under irradiation. The photocatalytic reduction of Cr(VI) to Cr(III) was studied in the presence of hole scavengers such as oxalic acid (OA) and methylene blue (MB). The photocatalytic degradation of MB was investigated in the presence and absence of Cr(VI). Presence of Au{sub nps} on the (TiO{sub 2}){sub nps} surface and its dispersion in the silicate sol-gel film (EDAS/(TiO{sub 2}-Au){sub nps}) improved the photocatalytic reduction of Cr(VI) and oxidation of MB due to the effective interfacial electron transfer from the conduction band of the TiO{sub 2} to Au{sub nps} by minimizing the charge recombination process when compared to the TiO{sub 2} and (TiO{sub 2}-Au){sub nps} in the absence of EDAS. The EDAS/(TiO{sub 2}-Au){sub nps} nanocomposite materials provided

  4. Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film

    Energy Technology Data Exchange (ETDEWEB)

    Fager, Hanna, E-mail: hanfa@ifm.liu.se; Greczynski, Grzegorz; Jensen, Jens; Lu, Jun; Hultman, Lars [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Howe, Brandon M. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States); Mei, A. B. [Frederick Seitz Materials Research Laboratory and Materials Science Department, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801 (United States); Greene, J. E.; Petrov, Ivan [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Frederick Seitz Materials Research Laboratory and Materials Science Department, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801 (United States)

    2015-09-15

    Hf{sub 1−x−y}Al{sub x}Si{sub y}N (0 ≤ x ≤ 0.14, 0 ≤ y ≤ 0.12) single layer and multilayer films are grown on Si(001) at 250 °C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a single Hf{sub 0.6}Al{sub 0.2}Si{sub 0.2} target in mixed 5%-N{sub 2}/Ar atmospheres at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf{sub 1−x−y}Al{sub x}Si{sub y}N films are controlled by varying the energy E{sub i} of the ions incident at the film growth surface while maintaining the ion-to-metal flux ratio constant at eight. Switching E{sub i} between 10 and 40 eV allows the growth of Hf{sub 0.78}Al{sub 0.10}Si{sub 0.12}N/Hf{sub 0.78}Al{sub 0.14}Si{sub 0.08}N multilayers with similar layer compositions, but in which the Si bonding state changes from predominantly Si–Si/Si–Hf for films grown with E{sub i} = 10 eV, to primarily Si–N with E{sub i} = 40 eV. Multilayer hardness values, which vary inversely with bilayer period Λ, range from 20 GPa with Λ = 20 nm to 27 GPa with Λ = 2 nm, while fracture toughness increases directly with Λ. Multilayers with Λ = 10 nm combine relatively high hardness, H ∼ 24 GPa, with good fracture toughness.

  5. Influence of a highly doped buried layer for HfInZnO thin-film transistors

    Science.gov (United States)

    Chong, Eugene; Lee, Sang Yeol

    2012-01-01

    Hafnium-indium-zinc oxide (HIZO) channel thin-film transistors (TFTs) have been reported with a 12 nm thick indium-zinc oxide (IZO)-buried layer. IZO-buried HIZO TFTs show excellent electrical characteristics and stabilities such as a high mobility (µFE) of ˜41.4 cm2 V-1 s-1 which is three times higher than that of conventional HIZO TFTs and significantly enhanced bias-temperature-induced stability. High mobility could be obtained since the current path is mainly formed on a highly conductive buried layer with a high carrier concentration over 1018 cm-3. Enhanced stability could be achieved mainly because the generation of the additional trap state was considerably reduced near the drain region due to a relatively short path since the current flows vertically from a highly conductive buried layer to a drain electrode through the HIZO channel via a relatively low carrier density region.

  6. Blue-yellow photoluminescence from Ce{sup 3+} {yields} Dy{sup 3+} energy transfer in HfO{sub 2}:Ce{sup 3+}:Dy{sup 3+} films deposited by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Martinez, R. [Instituto de Fisica y Matematicas, Universidad Tecnologica de la Mixteca, Carretera a Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca 69000 (Mexico); Lira, A.C. [Unidad Academica Profesional Nezahualcoyotl, Universidad Autonoma del Estado de Mexico, Av. Bordo de Xochiaca s/n, Nezahualcoyotl, Estado de Mexico 57000 (Mexico); Speghini, A. [DiSTeMeV, Universita di Verona, and INSTM, UdR Verona, Via Della Pieve 70, I-37029 San Floriano (Verona) (Italy); Falcony, C. [Departamento de Fisica, Universidad Autonoma Metropolitana-Iztapalapa, P.O. Box 55-534, Mexico, D.F. 09340 (Mexico); Caldino, U., E-mail: cald@xanum.uam.mx [Departamento de Fisica, Universidad Autonoma Metropolitana-Iztapalapa, P.O. Box 55-534, Mexico, D.F. 09340 (Mexico)

    2011-02-10

    Research highlights: > A blue-yellow emission phosphor excited with UV radiation can be manufactured with CeCl{sub 3} and DyCl{sub 3} doped HfO{sub 2} films deposited at 300 deg. C by the ultrasonic spray pyrolysis technique. > The addition of DyCl{sub 3} in the HfO{sub 2}:CeCl{sub 3} film leads to a non-radiative energy transfer from Ce{sup 3+} to Dy{sup 3+} under Ce{sup 3+} excitation at 280 nm. > The efficiency of this transfer increases up to 86 {+-} 3% for the film with the highest Dy{sup 3+} content. > The possibility of achieving the coordinates of ideal white light with increasing the concentration of dysprosium is demonstrated. - Abstract: HfO{sub 2} films codoped with Ce{sup 3+} and several concentrations of Dy{sup 3+} have been processed by the ultrasonic spray pyrolysis technique. Emissions from Dy{sup 3+} ions centred at 480 and 575 nm associated with the {sup 4}F{sub 9/2} {yields} {sup 6}H{sub 15/2} and {sup 4}F{sub 9/2} {yields} {sup 6}H{sub 13/2} transitions, respectively, have been observed upon UV excitation via a non-radiative energy transfer from Ce{sup 3+} to Dy{sup 3+} ions. Such energy transfer via an electric dipole-quadrupole interaction appears to be the most probable transfer mechanism. The efficiency of this transfer increases up to 86 {+-} 3% for the film with the highest Dy{sup 3+} content (1.9 {+-} 0.1 at.% as measured from EDS). The possibility of achieving the coordinates of ideal white light with increasing the concentration of dysprosium is demonstrated.

  7. Corrosion resistance of silane/silicate composite films on hot-dip galvanized steel%热镀锌钢表面硅烷/硅酸盐复合膜的耐蚀性能研究

    Institute of Scientific and Technical Information of China (English)

    吴海江; 卢锦堂

    2009-01-01

    To improve the corrosion resistance of silane films further, the silane/silicate composite films were prepared by immersion hot-dip galvanized (HDG) steel samples in silane solution firstly and then in sodium silicate solution. The corrosion resistance of the composite films were investigated by neutral salt spray (NSS)test, humid thermic test, salt water test and electrochemical impedance spectroscopy (EIS). The results revealed that the corrosion resistance of the composite films was significantly enhanced, which was superior to the single silane film, even better than some chromate passivation film. Furthermore, the low frequency inductive loop in EIS was disappeared and the low frequency impedance values for the composite films in 5% NaCl solution were firstly increased then decreased with the increasing of the immersion time, which demonstrated the self-healing activity of the composite films.%为了改善硅烷膜的耐蚀性,将硅烷化热镀锌钢板用硅酸钠溶液封闭后处理,获得了硅烷/硅酸盐复合膜.采用中性盐雾试验(NSS)、湿热试验、盐水全浸试验和电化学交流阻抗谱(EIS)评价了膜层的耐蚀性能.结果表明,与单一硅烷膜相比,复合膜的耐蚀性能明显提高,超过了常规铬酸盐钝化膜.尤其是在5%NaCl溶液中,复合膜的低频阻抗数值随浸泡时间的增加先增大后减小,表明其具有一定的"自修复"能力.

  8. On the relation between the effective ferromagnetic resonance linewidth {delta}f{sub eff} and damping parameter {alpha}{sub eff} in ferromagnetic Fe-Co-Hf-N nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material forschung I, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)], E-mail: klaus.seemann@imf.fzk.de; Leiste, H.; Klever, Ch. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material forschung I, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

    2009-10-15

    Ferromagnetic Fe-Co-Hf-N nanocomposite films were investigated concerning their microstructure-dependent frequency behaviour. To modify the composition, the films were deposited by reactive RF magnetron sputtering by using three different 6 in. targets with various Hf fractions. The films were post-annealed up to 600 deg. C in a static magnetic field to induce an in-plane uniaxial anisotropy and to obtain different crystal sizes. Depending on the annealing temperature, high-frequency losses were investigated by considering the full-width at half-maximum (FWHM) {delta}f{sub eff} of the imaginary part of the frequency-dependent permeability which showed a resonance frequency f{sub FMR} of 2.3 GHz for an in-plane uniaxial anisotropy field H{sub u} of 4 mT. The FWHM in correlation with the damping parameter {alpha}{sub eff} is discussed, e.g., in terms of two-magnon scattering. Damping occurs due to film inhomogeneity in magnetisation and uniaxial anisotropy caused by a magnetocrystalline anisotropy H{sub a} and/or non-magnetic phases. This will result in homogenous or even inhomogeneous resonance line broadening if additional and resonance as well as precession frequencies of independent grains arise.

  9. Structural, magnetic and electrical transport properties in electron-doped La{sub 0.85}Hf{sub 0.15}MnO{sub 3} epitaxial film

    Energy Technology Data Exchange (ETDEWEB)

    Han, Li-an; Zhu, Hua-ze; Zhang, Tao [Xi' an University of Science and Technology, Department of Applied Physics, Xi' an (China); Ma, Zi-wei [Yuncheng University, Department of Physics and Electronic Engineering, Yuncheng (China); Chen, Chang-le [Northwestern Polytechnical University, Department of Applied Physics, Xi' an (China)

    2017-03-15

    Using a pulsed laser deposition method, the electron-doped La{sub 0.85}Hf{sub 0.15}MnO{sub 3} (LHMO) film with the thickness of 90 nm was epitaxially grown on LaAlO{sub 3} (001) single crystal substrate. The structural, magnetic and electrical transport properties of the film have been studied comprehensively. The X-ray diffraction patterns confirm that LHMO film is of single phase, good quality and c axis orientation. The film undergoes a ferromagnetic-like ordering to paramagnetic states at T{sub C} =280 K. Moreover, a spin glass behavior observed in the film may be attributed to the strain effects. Using the percolation theory, we have analyzed the resistivity data ρ (T) of the film and given an excellent fit in the whole temperature range. Particularly, large temperature coefficient of resistance of 11.27% K{sup -} {sup 1} has been discovered near sub-room-temperature, indicating that LHMO film could be useful for bolometric applications. (orig.)

  10. The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor

    Science.gov (United States)

    Kwon, Jang-Yeon; Jung, Ji Sim; Son, Kyoung Seok; Lee, Kwang-Hee; Park, Joon Seok; Kim, Tae Sang; Park, Jin-Seong; Choi, Rino; Jeong, Jae Kyeong; Koo, Bonwon; Lee, Sang Yoon

    2010-11-01

    This study examined the effect of gate dielectric materials on the light-induced bias instability of Hf-In-Zn-O (HIZO) transistor. The HfOx and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during the application of negative-bias-thermal illumination stress for 3 h. In contrast, the HIZO transistor exhibited much better stability (<2.0 V) in terms of Vth movement under identical stress conditions. Based on the experimental results, we propose a plausible degradation model for the trapping of the photocreated hole carrier either at the channel/gate dielectric or dielectric bulk layer.

  11. Efficient 1.54-μm emission through Eu{sup 2+} sensitization of Er{sup 3+} in thin films of Eu{sup 2+}/Er{sup 3+} codoped barium strontium silicate under broad ultraviolet light excitation

    Energy Technology Data Exchange (ETDEWEB)

    Li, Leliang; Zheng, Jun, E-mail: zhengjun@semi.ac.cn; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2015-01-15

    Thin films of Eu{sup 2+}/Er{sup 3+} codoped barium strontium silicate were deposited on a thermal oxide Si substrate by magnetron sputtering. Optical properties suggest that after a rapid annealing process, these films can lead to efficient Er{sup 3+} emission at 1.54 μm with a lifetime of about 7.9 ms. Intense 1.54-μm light emission was achieved under broad ultraviolet light excitation through efficient energy transfer from Eu{sup 2+} to Er{sup 3+}. These results indicate that the Eu{sup 2+}/Er{sup 3+} thin films have potential applications as low cost and compact erbium doped waveguide amplifiers pumped by LEDs. - Highlights: • The Er{sub 0.07}Eu{sub 0.14}Sr{sub 1.14}Ba{sub 0.79}SiO{sub 4} films are fabricated by magnetron sputtering. • Efficient energy transfer from Eu{sup 2+} to Er{sup 3+} ions by the dipole–dipole interaction. • Intense 1.54 μm emission is achieved under broad excitation spectrum. • The films have potential applications as low cost and compact EDWAs.

  12. Temperature induced ferromagnetic resonance frequency change and resonance line broadening of a Fe-Co-Hf-N film with in-plane uniaxial anisotropy - a theoretical and experimental study

    Science.gov (United States)

    Seemann, K.; Krüger, K.; Leiste, H.

    2014-11-01

    A soft ferromagnetic Fe-Co-Hf-N film was produced by reactive r.f. magnetron sputtering, in order to study its high-frequency behaviour by means of frequency domain permeability measurements up to the GHz range. It resulted in the composition Fe33Co43Hf10N14 and exhibits a saturation polarisation Js of around 1.35 T. The film is consequently considered as being uniformly magnetised due to an in-plane uniaxial anisotropy of approximately μ0.Hu≈4.5 mT after annealing it at 400 °C in a static magnetic field for 1 h. While heating the film from room temperature to 300 °C during the high-frequency measurement procedure a marked ferromagnetic resonance peak shift (maximum of the imaginary part of the frequency-dependent permeability) from 2.35 GHz down to 1.84 GHz is conspicuous. This is in a very good agreement with the theory established by taking the “real” ferromagnetic resonance formula for ferromagnetic films into account. Simultaneously, the full width at half maximum (FWHM) ΔfFMR of the resonance line, which is a consequence of precession damping of the magnetic moments, clearly increases. This behaviour does not correlate with the ferromagnetic resonance value decrease, and is qualitatively discussed in terms of exchange interaction with the intrinsic spin-lattice relaxation process due to not totally supressed orbital momenta (≠0) of Fe2+ and Co2+ or the occupation change of their spectral levels within the induced uniaxial anisotropy field.

  13. Improved interface properties of atomic-layer-deposited HfO{sub 2} film on InP using interface sulfur passivation with H{sub 2}S pre-deposition annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hyun Soo [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Cho, Young Jin [Inorganic Material Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Sang-Moon [Process Development Team, Semiconductor R& D Center, Samsung Electronics Co. Ltd, Hwasung 445-701 (Korea, Republic of); Park, Jong-Bong; Yun, Dong-Jin [Analytical Engineering Group, Platform Technology Lab., Samsung Advanced Institute of Technology, Suwon 443-803 (Korea, Republic of); Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hwang, Cheol Seong, E-mail: cheolsh@snu.ac.kr [Department of Materials Science & Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Materials Science & Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of)

    2015-12-01

    Highlights: • ALD HfO{sub 2} films were grown on InP for III–V compound-semiconductor-based devices. • S passivation was performed with (NH{sub 4}){sub 2}S solution and annealing under a H{sub 2}S atmosphere. • The H{sub 2}S annealing provided similar S profiles at the interface without surface damage. • The H{sub 2}S annealing was more effective to suppress interface state density due to thermal energy. - Abstract: Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H{sub 2}S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO{sub 2} film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH{sub 4}){sub 2}S solution treatment. The H{sub 2}S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH{sub 4}){sub 2}S solution treatment, although S profiles at the interface of HfO{sub 2}/InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H{sub 2}S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H{sub 2}S annealing.

  14. Soft magnetic properties and high frequency characteristics of FeM (M = B, Hf, Zr) and pure Fe films fabricated by oblique deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chengcheng; Zhang, Chao; Wang, Fenglong; Zhao, Zhong; Jiang, Changjun; Xue, Desheng [Lanzhou University, Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou (China); Lanzhou University, Key Laboratory of Special Function Materials and Structure Design of Ministry of Education, Lanzhou (China)

    2015-09-15

    To improve the high-frequency properties of Fe-based thin films, doped and pure Fe thin films were obliquely deposited on Si (100) substrate by RF-magnetron sputtering. Vibrating sample magnetometer (VSM) measurements show obvious in-plane uniaxial magnetic anisotropy in both doped and pure Fe thin films, and enhancement effects of doping on Soft magnetic properties were also observed. Microwave permeability measurements indicate that the resonance frequency and permeability of pure Fe films are much larger than those of doped Fe thin films. Damping factors of Fe thin films deposited at different oblique angles were further investigated. (orig.)

  15. Clarification and mitigation of marked J c decrease at low magnetic fields of BaHfO3-doped SmBaCuO3 thin films deposited on seed layer

    Science.gov (United States)

    Watanabe, Yutaro; Ichino, Yusuke; Yoshida, Yutaka; Ichinose, Ataru

    2016-07-01

    In accordance with the results of our previous research, a low-temperature growth (LTG) technique is effective for expanding the lower growth temperature region of c-axis-orientated SmBa2Cu3O y (SmBCO) thin films. However, BaHfO3 (BHO)-doped LTG films show a marked decrease in J c at low magnetic fields compared with conventional PLD films. In this study, we aimed to clarify the mechanism of J c decrease and investigated the thickness dependence of the seed layer on the (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (100) single crystal. The obtained results indicate that J c decreased at low magnetic fields as the thickness of the seed layer increased. It is suggested that flux line kinks produced by flux motion in the seed layer would lead to the depinning of flux lines from BHO nanorods in the upper layer. Thus, we added Y2O3 into the seed layer to trap flux lines in the seed layer. Consequently, we improved J c in the low magnetic field region even in the films prepared by using the LTG technique.

  16. Reconciliation of the excess 176Hf conundrum in meteorites: Recent disturbances of the Lu-Hf and Sm-Nd isotope systematics

    Science.gov (United States)

    Bast, Rebecca; Scherer, Erik E.; Sprung, Peter; Mezger, Klaus; Fischer-Gödde, Mario; Taetz, Stephan; Böhnke, Mischa; Schmid-Beurmann, Hinrich; Münker, Carsten; Kleine, Thorsten; Srinivasan, Gopalan

    2017-09-01

    The long-lived 176Lu-176Hf and 147Sm-143Nd radioisotope systems are commonly used chronometers, but when applied to meteorites, they can reveal disturbances. Specifically, Lu-Hf isochrons commonly yield dates up to ∼300 Myr older than the solar system and varying initial 176Hf/177Hf values. We investigated this problem by attempting to construct mineral and whole rock isochrons for eucrites and angrites. Meteorites from different parent bodies exhibit similar disturbance features suggesting that a common process is responsible. Minerals scatter away from isochron regressions for both meteorite classes, with low-Hf phases such as plagioclase and olivine typically being most displaced above (or left of) reference isochrons. Relatively Hf-rich pyroxene is less disturbed but still to the point of steepening Lu-Hf errorchrons. Using our Lu-Hf and Sm-Nd data, we tested various Hf and Lu redistribution scenarios and found that decoupling of Lu/Hf from 176Hf/177Hf must postdate the accumulation of significant radiogenic 176Hf. Therefore early irradiation or diffusion cannot explain the excess 176Hf. Instead, disturbed meteorite isochrons are more likely caused by terrestrial weathering, contamination, or common laboratory procedures. The partial dissolution of phosphate minerals may predominantly remove rare earth elements including Lu, leaving relatively immobile and radiogenic Hf behind. Robust Lu-Hf (and improved Sm-Nd) meteorite geochronology will require the development of chemical or physical methods for removing unsupported radiogenic Hf and silicate-hosted terrestrial contaminants without disturbing parent-daughter ratios.

  17. Meteorite zircon constraints on the bulk Lu-Hf isotope composition and early differentiation of the Earth.

    Science.gov (United States)

    Iizuka, Tsuyoshi; Yamaguchi, Takao; Hibiya, Yuki; Amelin, Yuri

    2015-04-28

    Knowledge of planetary differentiation is crucial for understanding the chemical and thermal evolution of terrestrial planets. The (176)Lu-(176)Hf radioactive decay system has been widely used to constrain the timescales and mechanisms of silicate differentiation on Earth, but the data interpretation requires accurate estimation of Hf isotope evolution of the bulk Earth. Because both Lu and Hf are refractory lithophile elements, the isotope evolution can be potentially extrapolated from the present-day (176)Hf/(177)Hf and (176)Lu/(177)Hf in undifferentiated chondrite meteorites. However, these ratios in chondrites are highly variable due to the metamorphic redistribution of Lu and Hf, making it difficult to ascertain the correct reference values for the bulk Earth. In addition, it has been proposed that chondrites contain excess (176)Hf due to the accelerated decay of (176)Lu resulting from photoexcitation to a short-lived isomer. If so, the paradigm of a chondritic Earth would be invalid for the Lu-Hf system. Herein we report the first, to our knowledge, high-precision Lu-Hf isotope analysis of meteorite crystalline zircon, a mineral that is resistant to metamorphism and has low Lu/Hf. We use the meteorite zircon data to define the Solar System initial (176)Hf/(177)Hf (0.279781 ± 0.000018) and further to identify pristine chondrites that contain no excess (176)Hf and accurately represent the Lu-Hf system of the bulk Earth ((176)Hf/(177)Hf = 0.282793 ± 0.000011; (176)Lu/(177)Hf = 0.0338 ± 0.0001). Our results provide firm evidence that the most primitive Hf in terrestrial zircon reflects the development of a chemically enriched silicate reservoir on Earth as far back as 4.5 billion years ago.

  18. Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlO{sub x} films on Si{sub 83}Ge{sub 17}/Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, X.Y., E-mail: qxy2001@swu.edu.cn [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Zhou, G.D.; Li, J. [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Chen, Y.; Wang, X.H.; Dai, J.Y. [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China)

    2014-07-01

    A nano-floating gate memory capacitor consisting of a stack of 3 nm-thick HfAlO{sub x} tunneling layer, self-organized Ag nanocrystals (NCs), and a 6 nm-thick HfAlO{sub x} control layer, has been fabricated on compressively strained p-type Si{sub 83}Ge{sub 17}/Si(100) substrates by radio-frequency magnetron sputtering. The Ag-NCs with a size of 5–8 nm and a density of 5.7 × 10{sup 12}/cm{sup 2} are well dispersed in the amorphous HfAlO{sub x} matrix. Counterclockwise hysteresis capacitance–voltage curve with a memory window of ∼ 2 V, corresponding to a charge storage density of about 1.3 × 10{sup 13} electrons/cm{sup 2}, is observed in this memory capacitor. The accumulation capacitance of this memory capacitor has no obvious decrease during electrical stressing process within a period of 10{sup 4} s, but the memory window gradually becomes narrower, and only 54% stored charges are retained in the Ag-NCs after 10{sup 5} s stressing. Defect-enhanced Poole–Frenkel tunneling is found to be responsible for the degradation of memory properties. - Highlights: • Dispersed Ag nanocrystals act as memory nodes. • Realize a 2 V memory window • Illustrate the memory degradation process • Identify a defect-enhanced tunneling mechanism.

  19. Nanomechanical and nanotribological behaviors of hafnium boride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Shahla, E-mail: chowdhury.shahla@gmail.com [Department of Mechanical Science and Engineering, University of Illinois at Urbana Champaign, 1206 W Green Street, Urbana, IL 61801 (United States); Department of Mechanical Engineering, Texas A& M University, 3123 TAMU, College Station, TX (United States); Polychronopoulou, Kyriaki, E-mail: kpolychronopoulou@gmail.com [Department of Mechanical Science and Engineering, University of Illinois at Urbana Champaign, 1206 W Green Street, Urbana, IL 61801 (United States); Mechanical Engineering Department, Khalifa University of Science Technology & Research, P.O Box 127788, Abu Dhabi (United Arab Emirates); Cloud, Andrew, E-mail: andrewncloud@gmail.com [Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, 1304 W Green Street, Urbana, IL 61801 (United States); Abelson, John R., E-mail: abelson@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, 1304 W Green Street, Urbana, IL 61801 (United States); Polycarpou, Andreas A., E-mail: apolycarpou@tamu.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana Champaign, 1206 W Green Street, Urbana, IL 61801 (United States); Department of Mechanical Engineering, Texas A& M University, 3123 TAMU, College Station, TX (United States)

    2015-11-30

    Nanocrystalline HfB{sub 2}, HfBN and multilayer HfB{sub 2}/HfBN films were deposited using chemical vapor deposition. Half of the amorphous as-deposited films were subjected to annealing at 700 °C to obtain their annealed equivalent samples. Nanoindentation and nanoscratch experiments were performed to measure their mechanical properties, friction and scratch/wear behavior. The annealed films showed higher hardness values compared to the as-deposited films, with the HfB{sub 2} film exhibiting the highest hardness. All three films exhibited similar shear strength around 3 GPa for as-deposited and 5.5 GPa for annealed films, implying reduced delamination propensity for the annealed samples. The annealed HfBN and multilayer HfB{sub 2}/HfBN films exhibited lower friction and wear, compared to the rest of the films. Specifically, the annealed multilayer HfB{sub 2}/HfBN films, exhibited an order of magnitude lower wear, compared to the HfB{sub 2} films, making them excellent candidates for low friction and low wear hard coating applications. - Highlights: • Hard, dense thin films of HfB2/HfBN were deposited using chemical vapor deposition. • Annealed films exhibited high shear strength, and thus reduced propensity to delamination. • Hardness values alone do not correlate with friction and wear performance. • Annealed multi-layered HfB2/HfBN films exhibited outstanding friction and wear resistance.

  20. Production of HfO2 thin films using different methods:chemical bath deposition, SILAR and sol-gel process

    Institute of Scientific and Technical Information of China (English)

    İ.A.Kariper

    2014-01-01

    Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, succes-sive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films pro-duced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The opti-cal properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

  1. ExtraHF survey

    DEFF Research Database (Denmark)

    Piepoli, Massimo F; Binno, Simone; Corrà, Ugo

    2015-01-01

    AIMS: In heart failure (HF), exercise training programmes (ETPs) are a well-recognized intervention to improve symptoms, but are still poorly implemented. The Heart Failure Association promoted a survey to investigate whether and how cardiac centres in Europe are using ETPs in their HF patients...... of evidence on safety or benefit was cited. When implemented, an ETP was proposed to all HF patients in only 55% of the centres, with restriction according to severity or aetiology. CONCLUSIONS: With respect to previous surveys, there is evidence of increased availability of ETPs in HF in Europe, although too...

  2. Improvement in Jc performance below liquid nitrogen temperature for SmBa2Cu3Oy superconducting films with BaHfO3 nano-rods controlled by low-temperature growth

    Directory of Open Access Journals (Sweden)

    S. Miura

    2016-01-01

    Full Text Available For use in high-magnetic-field coil-based applications, the critical current density (Jc of REBa2Cu3Oy (REBCO, where RE = rare earth coated conductors must be isotropically improved, with respect to the direction of the magnetic field; these improvements must be realized at the operating conditions of these applications. In this study, improvement of the Jc for various applied directions of magnetic field was achieved by controlling the morphology of the BaHfO3 (BHO nano-rods in a SmBCO film. We fabricated the 3.0 vol. % BHO-doped SmBCO film at a low growth temperature of 720 °C, by using a seed layer technique (Ts = 720 °C film. The low-temperature growth resulted in a morphological change in the BHO nano-rods. In fact, a high number density of (3.1 ± 0.1 × 103 μm−2 of small (diameter: 4 ± 1 nm, discontinuous nano-rods that grew in various directions, was obtained. In Jc measurements, the Jc of the Ts = 720 °C film in all directions of the applied magnetic field was higher than that of the non-doped SmBCO film. The Jcmin (6.4 MA/cm2 of the former was more than 6 times higher than that (1.0 MA/cm2 of the latter at 40 K, under 3 T. The aforementioned results indicated that the discontinuous BHO nano-rods, which occurred with a high number density, exerted a 3D-like flux pinning at the measurement conditions considered. Moreover, at 4.2 K and under 17 T, a flux pinning force density of 1.6 TN/m3 was realized; this value was comparable to the highest value recorded, to date.

  3. Improvement in Jc performance below liquid nitrogen temperature for SmBa2Cu3Oy superconducting films with BaHfO3 nano-rods controlled by low-temperature growth

    Science.gov (United States)

    Miura, S.; Yoshida, Y.; Ichino, Y.; Xu, Q.; Matsumoto, K.; Ichinose, A.; Awaji, S.

    2016-01-01

    For use in high-magnetic-field coil-based applications, the critical current density (Jc) of REBa2Cu3Oy (REBCO, where RE = rare earth) coated conductors must be isotropically improved, with respect to the direction of the magnetic field; these improvements must be realized at the operating conditions of these applications. In this study, improvement of the Jc for various applied directions of magnetic field was achieved by controlling the morphology of the BaHfO3 (BHO) nano-rods in a SmBCO film. We fabricated the 3.0 vol. % BHO-doped SmBCO film at a low growth temperature of 720 °C, by using a seed layer technique (Ts = 720 °C film). The low-temperature growth resulted in a morphological change in the BHO nano-rods. In fact, a high number density of (3.1 ± 0.1) × 103 μm-2 of small (diameter: 4 ± 1 nm), discontinuous nano-rods that grew in various directions, was obtained. In Jc measurements, the Jc of the Ts = 720 °C film in all directions of the applied magnetic field was higher than that of the non-doped SmBCO film. The Jcmin (6.4 MA/cm2) of the former was more than 6 times higher than that (1.0 MA/cm2) of the latter at 40 K, under 3 T. The aforementioned results indicated that the discontinuous BHO nano-rods, which occurred with a high number density, exerted a 3D-like flux pinning at the measurement conditions considered. Moreover, at 4.2 K and under 17 T, a flux pinning force density of 1.6 TN/m3 was realized; this value was comparable to the highest value recorded, to date.

  4. Thermoelectric properties of TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn thin films and superlattices with reduced thermal conductivities

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Tino

    2013-08-21

    Rising energy costs and enhanced CO{sub 2} emission have moved research about thermoelectric (TE) materials into focus. The suitability of a material for usage in TE devices depends on the figure of merit ZT and is equal to α{sup 2}σTκ{sup -1} including Seebeck coefficient α, conductivity σ, temperature T and thermal conductivity κ. Without affecting the power factor α{sup 2}σ, using nanostructuring, ZT should here be increased by a depressed thermal conductivity. As half-Heusler (HH) bulk materials, the TE properties of TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn have been extensively studied. Here, semiconducting TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn thin films were fabricated for the first time by dc magnetron sputtering. On MgO (100) substrates, strongly textured polycrystalline films were obtained at substrate temperatures of about 450 C. The film consisted of grains with an elongation perpendicular to the surface of 55 nm. These generated rocking curves with FWHMs of less than 1 . Structural analyses were performed by X ray diffraction (XRD). Having deposition rates of about 1 nms{sup -1} within shortest time also films in the order of microns were fabricated. For TiNiSn the highest in-plane power factor of about 0.4 mWK{sup -2}m{sup -1} was measured at about 550 K. In addition, at room temperature a cross-plane thermal conductivity of 2.8 Wm{sup -1}K{sup -1} was observed by the differential 3ω method. Because the reduction of thermal conductivity by mass fluctuation is well-known and interface scattering of phonons is expected, superlattices (SL) were fabricated. Therefore, TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn were successively deposited. While the sputter cathodes were continuously running, for fabrication of SLs the substrates were moved from one to another. The high crystal quality of the SLs and the sharp interfaces were proven by satellite peaks (XRD) and Scanning Transmission Electron Microscopy (STEM). For a SL with a periodicity of 21 nm (Ti

  5. Effects of Modified Precursor Solution on Microstructure of (Y,Yb)MnO3/HfO2/Si

    Science.gov (United States)

    Suzuki, Kazuyuki; Kato, Kazumi

    2007-10-01

    Ferroelectric/insulator/silicon structures were prepared using (Y,Yb)MnO3 films as ferroelectrics and HfO2 thin films as insulators through alkoxy-derived precursor solutions. The HfO2 solution was chemically modified in order to decrease the number of heating cycles required. The HfO2 films prepared using a partially hydrolyzed alkoxide solution had a uniform structure. From the results of measurements of the roughness level and refractive index of the HfO2 films, the partial hydrolysis of the HfO2 solution was found to be effective for the formation of a uniform microstructure in a thin insulator film. (Y,Yb)MnO3/HfO2/Si structures were constructed using the resultant HfO2 thin films prepared using the modified solutions.

  6. Ferromagnetic resonance frequency increase and resonance line broadening of a ferromagnetic Fe-Co-Hf-N film with in-plane uniaxial anisotropy by high-frequency field perturbation

    Science.gov (United States)

    Seemann, K.; Leiste, H.; Krüger, K.

    2013-11-01

    Soft ferromagnetic Fe-Co-Hf-N films, produced by reactive r.f. magnetron sputtering, are useful to study the ferromagnetic resonance (FMR) by means of frequency domain permeability measurements up to the GHz range. Films with the composition Fe33Co43Hf10N14 exhibit a saturation polarisation Js of around 1.35 T. They are consequently considered as being uniformly magnetised due to an in-plane uniaxial anisotropy of approximately μ0Hu≈4.5 m T after annealing them, e.g., at 400 °C in a static magnetic field for 1 h. Being exposed to a high-frequency field, the precession of magnetic moments leads to a marked frequency-dependent permeability with a sharp Lorentzian shaped imaginary part at around 2.33 GHz (natural resonance peak), which is in a very good agreement with the modified Landau-Lifschitz-Gilbert (LLG) differential equation. A slightly increased FMR frequency and a clear increase in the resonance line broadening due to an increase of the exciting high-frequency power (1-25.1 mW), considered as an additional perturbation of the precessing system of magnetic moments, could be discovered. By solving the homogenous LLG differential equation with respect to the in-plane uniaxial anisotropy, it was revealed that the high-frequency field perturbation impacts the resonance peak position fFMR and resonance line broadening ΔfFMR characterised by a completed damping parameter α=αeff+Δα. Adapted from this result, the increase in fFMR and decrease in lifetime of the excited level of magnetic moments associated with ΔfFMR, similar to a spin-½ particle in a static magnetic field, was theoretically elaborated as well as compared with experimental data.

  7. Nanostructured silicate polymer concrete

    Directory of Open Access Journals (Sweden)

    Figovskiy Oleg L'vovich

    2014-03-01

    Full Text Available It has been known that acid-resistant concretes on the liquid glass basis have high porosity (up to 18~20 %, low strength and insufficient water resistance. Significant increasing of silicate matrix strength and density was carried out by incorporation of special liquid organic alkali-soluble silicate additives, which block superficial pores and reduce concrete shrinkage deformation. It was demonstrated that introduction of tetrafurfuryloxisilane additive sharply increases strength, durability and shock resistance of silicate polymer concrete in aggressive media. The experiments showed, that the strength and density of silicate polymer concrete increase in case of decreasing liquid glass content. The authors obtained optimal content of silicate polymer concrete, which possesses increased strength, durability, density and crack-resistance. Diffusive permeability of concrete and its chemical resistance has been investigated in various corroding media.

  8. What Hf isotopes in zircon tell us about crust-mantle evolution

    Science.gov (United States)

    Iizuka, Tsuyoshi; Yamaguchi, Takao; Itano, Keita; Hibiya, Yuki; Suzuki, Kazue

    2017-03-01

    The 176Lu-176Hf radioactive decay system has been widely used to study planetary crust-mantle differentiation. Of considerable utility in this regard is zircon, a resistant mineral that can be precisely dated by the U-Pb chronometer and record its initial Hf isotope composition due to having low Lu/Hf. Here we review zircon U-Pb age and Hf isotopic data mainly obtained over the last two decades and discuss their contributions to our current understanding of crust-mantle evolution, with emphasis on the Lu-Hf isotope composition of the bulk silicate Earth (BSE), early differentiation of the silicate Earth, and the evolution of the continental crust over geologic history. Meteorite zircon encapsulates the most primitive Hf isotope composition of our solar system, which was used to identify chondritic meteorites best representative of the BSE (176Hf/177Hf = 0.282793 ± 0.000011; 176Lu/177Hf = 0.0338 ± 0.0001). Hadean-Eoarchean detrital zircons yield highly unradiogenic Hf isotope compositions relative to the BSE, providing evidence for the development of a geochemically enriched silicate reservoir as early as 4.5 Ga. By combining the Hf and O isotope systematics, we propose that the early enriched silicate reservoir has resided at depth within the Earth rather than near the surface and may represent a fractionated residuum of a magma ocean underlying the proto-crust, like urKREEP beneath the anorthositic crust on the Moon. Detrital zircons from world major rivers potentially provide the most robust Hf isotope record of the preserved granitoid crust on a continental scale, whereas mafic rocks with various emplacement ages offer an opportunity to trace the Hf isotope evolution of juvenile continental crust (from εHf[4.5 Ga] = 0 to εHf[present] = + 13). The river zircon data as compared to the juvenile crust composition highlight that the supercontinent cycle has controlled the evolution of the continental crust by regulating the rates of crustal generation and intra

  9. Structure and spectroscopic analysis of the graphene monolayer film directly grown on the quartz substrate via the HF-CVD technique

    Science.gov (United States)

    Mahmoud, Waleed E.; Al-Hazmi, Farag S.; Al-Ghamdi, A. A.; Shokr, F. S.; Beall, Gary W.; Bronstein, Lyudmila M.

    2016-08-01

    Direct growth of a monolayer graphene film on a quartz substrate by a hot filament chemical vapor deposition technique is reported. The monolayer graphene film prepared was characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), selected area electron diffraction (SAED), and atomic force microscopy (AFM). The optical properties were studied by spectroscopic elliposmetry. The experimental data were fitted by the Forouhi-Bloomer model to estimate the extinction coefficient and the refractive index of the monolayer graphene film. The refractive index spectrum in the visible region was studied based on the harmonic oscillator model. The lattice dielectric constant, real and imaginary dielectric constants and the ratio of the charge carrier number to the effective mass were determined. The surface and volume energy loss parameters were also found and showed that the value of the surface energy loss is greater than the volume energy loss. The determination of these optical constants will open new avenue for novel applications of graphene films in the field of wave plates, light modulators, ultrahigh-frequency signal processing and LCDs.

  10. LABORATORY INVESTIGATIONS OF SILICATE MUD CONTAMINATION WITH CALCIUM

    Directory of Open Access Journals (Sweden)

    Nediljka Gaurina-Međimurec

    2004-12-01

    Full Text Available The silicate-based drilling fluid is a low solids KCl/polymer system with the addition of soluble sodium or potassium silicate to enhance inhibition and wellbore stability. Silicate-based drilling fluids exhibit remarkable shale and chalk stabilizing properties, resulting in gauge hole and the formation of firm cuttings when drilling reactive shales and soft chalks. Silicates protect shales by in-situ gellation when exposed to the neutral pore fluid and precipitation, which occurs on contact with divalent ions present at the surface of the shale. Also, silicates prevent the dispersion and washouts when drilling soft chalk by reacting with the Ca2+ ions present on chalk surfaces of cutting and wellbore to form a protective film. The silicate-based drilling fluid can be used during drilling hole section through shale interbeded anhydrite formations because of its superior shale stabilizing characteristics. However, drilling through the anhydrite can decrease the silicate concentration and change rheological and filtration fluid properties. So, the critical concentration of calcium ions should be investigated by lab tests. This paper details the mechanism of shale inhibition using silicate-based drilling fluid, and presents results of lab tests conducted to ascertain the effect of Ca2+ ions on silicate level in the fluid and the fluid properties.

  11. The multilayer Fe/Hf studied with slow positron beam

    Science.gov (United States)

    Murashige, Y.; Tashiro, M.; Nakajyo, T.; Koizumi, T.; Kanazawa, I.; Komori, F.; Ito, Y.

    1997-04-01

    The positron annihilation parameter versus the incident positron energy is measured in the thin Fe films and the Fe/Hf bilayer on silica substrate, by means of the variable energetic slow-positron beam technique. We have analyzed the change in open-volume spaces and vacancy-type defects among the Fe microcrystals in these thin films with the deposition temperature.

  12. Improved mechanical and corrosion properties of nickel composite coatings by incorporation of layered silicates

    Energy Technology Data Exchange (ETDEWEB)

    Tientong, J. [University of North Texas, Department of Chemistry, 1155 Union Circle #305070, Denton, TX 76203 (United States); Ahmad, Y.H. [Center for Advanced Materials, P.O. Box 2713, Qatar University, Doha (Qatar); Nar, M.; D' Souza, N. [University of North Texas, Department of Mechanical and Energy Engineering, Denton, TX 76207 (United States); Mohamed, A.M.A. [Center for Advanced Materials, P.O. Box 2713, Qatar University, Doha (Qatar); Golden, T.D., E-mail: tgolden@unt.edu [University of North Texas, Department of Chemistry, 1155 Union Circle #305070, Denton, TX 76203 (United States)

    2014-05-01

    Layered silicates as exfoliated montmorillonite are incorporated into nickel films by electrodeposition, enhancing both corrosion resistance and hardness. Films were deposited onto stainless steel from a plating solution adjusted to pH 9 containing nickel sulfate, sodium citrate, and various concentrations of exfoliated montmorillonite. The presence of the incorporated layered silicate was confirmed by scanning electron microscopy and energy-dispersive X-ray spectroscopy. The composite films were also compact and smooth like the pure nickel films deposited under the same conditions as shown by scanning electron microscopy. X-ray diffraction results showed that incorporation of layered silicates into the film do not affect the nickel crystalline fcc structure. The nanocomposite films exhibited improved stability and adhesion. Pure nickel films cracked and peeled from the substrate when immersed in 3.5% NaCl solution within 5 days, while the nanocomposite films remained attached even after 25 days. The corrosion resistance of the nickel nanocomposites was also improved compared to nickel films. Nickel-layered silicate composites showed a 25% increase in Young's modulus and a 20% increase in hardness over pure nickel films. - Highlights: • 0.05–2% of layered silicates are incorporated into crystalline nickel films. • Resulting composite films had improved stability and adhesion. • Corrosion resistance improved for the composite films. • Hardness improved 20% and young's modulus improved 25% for the composite films.

  13. Polymer-Layer Silicate Nanocomposites

    DEFF Research Database (Denmark)

    Potarniche, Catalina-Gabriela

    Nowadays, some of the material challenges arise from a performance point of view as well as from recycling and biodegradability. Concerning these aspects, the development of polymer layered silicate nanocomposites can provide possible solutions. This study investigates how to obtain polymer layered...... silicate nanocomposites and their structure-properties relationship. In the first part of the thesis, thermoplastic layered silicates were obtained by extrusion. Different modification methods were tested to observe the intercalation treatment effect on the silicate-modifier interactions. The silicate...

  14. Hf-W chronometry of primitive achondrites

    Science.gov (United States)

    Schulz, T.; Münker, C.; Mezger, K.; Palme, H.

    2010-03-01

    Metal segregation and silicate melting on asteroids are the most incisive differentiation events in the early evolution of planetary bodies. The timing of these events can be constrained using the short-lived 182Hf- 182W radionuclide system. Here we present new 182Hf- 182W data for major types of primitive achondrites including acapulcoites, winonaites and one lodranite. These meteorites are of particular interest because they show only limited evidence for partial melting of silicates and are therefore intermediate between chondrites and achondrites. For acapulcoites we derived a 182Hf- 182W age of Δ tCAI = 4.1 +1.2/ -1.1 Ma. A model age for winonaite separates calculated from the intercept of the isochron defines an age of Δ tCAI = 4.8 +3.1/ -2.6 Ma (assuming a bulk Hf/W ratio of ˜1.2). Both ages most likely define primary magmatic events on the respective parent bodies, such as melting of metal, although metal stayed in place and did not segregate to form a core. A later thermal event is responsible for resetting of the winonaite isochron, yielding an age of Δ tCAI = 14.3 +2.7/ -2.2 Ma, significantly younger than the model age. Assuming a co-genetic relationship between winonaites and silicates present in IAB iron meteorites (based on oxygen isotope composition) and including data by Schulz et al. (2009), a common parent body chronology can be established. Magmatic activity occurred between ˜1.5 and 5 Ma after CAIs. More than 5 Ma later, intensive thermal metamorphism has redistributed Hf-W. Average cooling rates calculated for the winonaite/IAB parent asteroid range between ˜35 and ˜4 K/Ma, most likely reflecting different burial depths. Cooling rates obtained for acapulcoites were ˜40 K/Ma to ˜720 K and then ˜3 K/Ma to ˜550 K. Accretion and subsequent magmatism on the acapulcoite parent body occurred slightly later if compared to most achondrite parent bodies (e.g., angrites, ureilites and eucrites), in this case supporting the concept of an inverse

  15. Influence of nano-particle diameter on superconducting properties in BaMO{sub 3}(M = Sn, Hf)/YBa{sub 2}Cu{sub 3}O{sub y} quasi-multilayered films

    Energy Technology Data Exchange (ETDEWEB)

    Kotaki, T.; Uraguchi, Y.; Makihara, T.; Suenaga, M.; Sueyoshi, T.; Fujiyoshi, T., E-mail: fuji@cs.kumamoto-u.ac.jp; Mitugi, F.; Ikegami, T.

    2015-11-15

    Highlights: • BSO nanoparticles which grown at higher temperature have larger diameter. • BSO nanoparticles which have large diameter make a broad peak of J{sub c} around B || c. • BSO/YBCO film which grown at 770 °C shows the improvement of J{sub c} at high temperature. • BHO doped YBCO multilayered film does not show the improvement of J{sub c.} - Abstract: In order to investigate the influence of diameter and spatial distribution of three-dimensional (3D) pinning centers on critical current density J{sub c}, BMO (BaSnO{sub 3} (BSO) or BaHfO{sub 3} (BHO)) doped YBa{sub 2}Cu{sub 3}O{sub y} (YBCO) thin films were fabricated by a quasi-multilayering process using a pulsed laser deposition method. The prepared films are referred as BMO(m,n)T{sub s}, where m and n denotes the number of laser pulse on the BMO target and the total number of BMO/YBCO bilayers, respectively and T{sub s} is the growth temperature. BSO(1,100)750 and BSO(1,100)770 show the improvement of J{sub c} in comparison with the pure YBCO sample in wide range of magnetic field directions at 65 K. However, at 77.3 K, improvement of J{sub c} was seen in only BSO(1,100)770. The BSO nano-particles within BSO(1,100)770 are considered to have larger diameter, so that BSO nano-particles can immobilize the flux lines in the high temperature region. In addition, BSO(1,100)770 shows the high peak of J{sub c} centered at θ = 0° in the angular dependence of J{sub c}. On the other hand, the J{sub c} of BHO(1,100)770 falls below that of pure YBCO samples in all magnetic field orientation. In addition, at 65 K, there is no peak of J{sub c} at any angles except for θ = 90°. These results indicates that the diameter of BHO nano-particles in BHO(1,100)770 might be much smaller than that of BSO nano-particle and BHO nanoparticles cannot work as effective pinning center.

  16. Mesoporous Silicate Materials in Sensing

    Directory of Open Access Journals (Sweden)

    Paul T. Charles

    2008-08-01

    Full Text Available Mesoporous silicas, especially those exhibiting ordered pore systems and uniform pore diameters, have shown great potential for sensing applications in recent years. Morphological control grants them versatility in the method of deployment whether as bulk powders, monoliths, thin films, or embedded in coatings. High surface areas and pore sizes greater than 2 nm make them effective as adsorbent coatings for humidity sensors. The pore networks also provide the potential for immobilization of enzymes within the materials. Functionalization of materials by silane grafting or through cocondensation of silicate precursors can be used to provide mesoporous materials with a variety of fluorescent probes as well as surface properties that aid in selective detection of specific analytes. This review will illustrate how mesoporous silicas have been applied to sensing changes in relative humidity, changes in pH, metal cations, toxic industrial compounds, volatile organic compounds, small molecules and ions, nitroenergetic compounds, and biologically relevant molecules.

  17. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-09-01

    Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.

  18. Ferroelectricity-modulated resistive switching in Pt/Si:HfO2/HfO2-x /Pt memory

    Science.gov (United States)

    Ran, Jiang; Xianghao, Du; Zuyin, Han

    2016-08-01

    It is investigated for the effect of a ferroelectric Si:HfO2 thin film on the resistive switching in a stacked Pt/Si:HfO2/highly-oxygen-deficient HfO2-x /Pt structure. Improved resistance performance was observed. It was concluded that the observed resistive switching behavior was related to the modulation of the width and height of a depletion barrier in the HfO2-x layer, which was caused by the Si:HfO2 ferroelectric polarization field effect. Reliable switching reproducibility and long data retention were observed in these memory cells, suggesting their great potential in non-volatile memories applications with full compatibility and simplicity. Project supported by the National Natural Science Foundation of China (No. 11374182), the Natural Science Foundation of Shandong Province (No. ZR2012FQ012), and the Jinan Independent Innovation Projects of Universities (No. 201303019).

  19. Electronic stopping force of {sup 12}C, {sup 28}Si and {sup 63}Cu ions in HfO{sub 2} and SiO{sub 2} dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Msimanga, M., E-mail: mandla@tlabs.ac.za [iThemba LABS Gauteng, National Research Foundation, Private Bag 11, WITS 2050, Johannesburg (South Africa); Pineda-Vargas, C.A. [Materials Research Department, iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Faculty of Health and Wellness Sciences, CPUT, Cape Town (South Africa); Hlatshwayo, T. [Physics Department, University of Pretoria, Pretoria (South Africa); Comrie, C.M. [Materials Research Department, iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Department of Physics, University of Cape Town, Rondebosch 7701 (South Africa); Ammi, H. [Centre de Recherche Nucléaire d’Alger, CRNA, B.P. 399, 02 Bd. Frantz Fanon, Alger-Gare, Algiers (Algeria); Nkosi, M. [Materials Research Department, iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa)

    2014-03-01

    The stopping force of ions in matter is a basic physical concept that provides insight into the nature of ion-beam matter interactions. In applied research such as in nuclear analytical spectrometry the accuracy of stopping force data is crucial to the accuracy of analyses performed. The availability of ab initio calculations that can provide stopping force data with reasonable accuracy is a desirable development not only for ion beam analysis work and other applications that exploit the passage of energetic ions through matter, but also for fundamental ion-beam matter interaction studies. In this work stopping force measurements of {sup 12}C, {sup 28}Si and {sup 63}Cu ions through SiO{sub 2} and HfO{sub 2} dielectric films were carried out by time of flight spectrometry and the results are compared with semi-empirical calculations by Ziegler’s Stopping and Range of Ions in Matter (SRIM) code, and ab initio calculations by Grande and Schiewietz’s Convolution approximation for swift Particles (CasP) code. Indications are that in the 0.1–1.0 MeV/u projectile energy range, while SRIM performs quite well for lighter ions, in the case of intermediate to heavy projectiles CasP is on par with, and promises to describe stopping more accurately than SRIM, possibly due to the former’s incorporation of charge exchange effects into total stopping.

  20. Diffusion of Hf and Nb in Zr-19%Nb

    Energy Technology Data Exchange (ETDEWEB)

    Zou, H. [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; Hood, G.M. [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; Schultz, R.J. [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; Matsuura, N. [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; Roy, J.A. [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; Jackman, J.A. [CANMET, Ottawa, Ont. (Canada). Met. Sci. and Technol.

    1996-05-01

    Diffusion of Hf and Nb in large-grained bcc Zr-19%Nb has been studied. Diffusion coefficients of Hf, D(Hf), were measured in the range 620-1173 K and D(Nb) was measured at 920 and 1167 K. The Hf diffusion profiles were determined by SIMS and the Nb profiles by microtome sectioning and radio-tracer counting. The Hf data show a smooth, temperature-dependent behaviour through the monotectoid temperature, 875 K, and may be characterised by D{approx}10{sup -9}.exp-1.4 (eV/kT) m{sup 2}/s. D(Nb) tends to be lower than the corresponding values for D(Hf). Overall, diffusion of Hf and Nb are characteristic of diffusion in bcc Zr. Surface hold-up (oxide film) at low temperatures was overcome by using ion-implanted Hf diffusion sources. The results are compared with earlier work and discussed in terms of diffusion mechanisms and the {beta}-phase transformation of commercial Zr-2.5Nb. (orig.).

  1. Silicic Large Igneous Provinces

    Institute of Scientific and Technical Information of China (English)

    Scott Bryan

    2007-01-01

    @@ Large Igneous Provinces (LIPs) are the end-product of huge additions of magma to the continental crust both at the surface and at depth. Since the first categorisation of LIPs by Coffin & Eldholm (1994), it has been recognised that LIPs are more varied inform, age and character, and this includes the recognition of Silicic LIPs. Silicic LIPs are the largest accumulations of primary volcaniclastic rocks at the Earth's surface with areal extents >0.1 Mkm2 and extrusive and subvolcanic intrusive volumes >0.25 Mkm3. The Late Palaeozoic to Cenozoic Silicic LIP events are the best recognised and are similar in terms of their dimension, crustal setting, volcanic architecture and geochemistry.

  2. Interaction of La2O3 capping layers with HfO2 gate dielectrics

    Science.gov (United States)

    Copel, M.; Guha, S.; Bojarczuk, N.; Cartier, E.; Narayanan, V.; Paruchuri, V.

    2009-11-01

    We report the effect of La2O3 capping layers on HfO2/SiO2/Si dielectrics, proposed for use in threshold voltage tuning of field effect transistors. Depth profiling with medium energy ion scattering shows that an initial surface layer of La2O3 diffuses through the HfO2 at elevated temperatures, ultimately converting some of the thin interfacial SiO2 into a silicate. Core-level photoemission measurements indicate that the additional band-bending induced by the La2O3 only appears after diffusion, and the added charge resides between the HfO2 and the substrate.

  3. Frederiksberg HF kursus

    DEFF Research Database (Denmark)

    Lindstrøm, Maria Duclos

    2008-01-01

    Notatet bygger på et interviewmateriale med dimitterede HF-kursister 3 måneder efter endt eksamen. Notatet undersøger dels, hvad der har hjulpet til at gennemføre, dels hvad der har været negativt og vanskeligt ved uddannelsen. Endvidere belyser notatet hvad kursisterne oplever at tage med fra de...

  4. On the comparison of the polarisation behaviour of exchange-biased AF/F NiMn/Fe{sub 37}Co{sub 48}Hf{sub 15} bi-layer and multi-layer films with increased ferromagnetic cut-off frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K., E-mail: klaus.seemann@kit.edu [Karlsruhe Institute of Technology KIT (Campus North), Institute for Applied Materials, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Leiste, H.; Krueger, K. [Karlsruhe Institute of Technology KIT (Campus North), Institute for Applied Materials, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2012-03-15

    Antiferromagnetic/ferromagnetic (AF/F) NiMn/Fe{sub 37}Co{sub 48}Hf{sub 15} films were investigated with respect to their exchange bias, in-plane unidirectional anisotropy, polarisation and high frequency behaviour. After deposition, carried out by r.f. magnetron sputtering, the films were post-annealed for 4 h at 300 Degree-Sign C in a static magnetic field, in order to induce exchange-bias, which results in a unidirectional anisotropy. Dependent on the presence of a bi-layer or multi-layer sandwich structure the films show a different exchange-bias field-ferromagnetic inter-layer thickness behaviour with exchange-bias fields {mu}{sub 0} Low-Asterisk H{sub eb} between 2 and 10 mT. The in-plane uniaxial (single film) or unidirectional anisotropy fields {mu}{sub 0}*H{sub UF} were between 4 and 18 mT. This results in a significant increase of the cut-off frequency in the GHz range in comparison to a single Fe{sub 37}Co{sub 48}Hf{sub 15} film, which is shown by frequency-dependent permeability plots. High damping in the imaginary part of the permeability, i.e., high resonance line broadening could be observed for films with high coercivity {mu}{sub 0}*H{sub c} of around 7 mT in the easy axis of magnetisation. - Highlights: Black-Right-Pointing-Pointer Static and dynamic properties of NiMn/Fe{sub 37}Co{sub 48}Hf{sub 15} bi- and multi-layer films. Black-Right-Pointing-Pointer Theoretic analysis of the H{sub eb}- field difference of bi- and multi-layer films. Black-Right-Pointing-Pointer Two-stage magnetic process in the polarisation curves of the AF/F multi-layers. Black-Right-Pointing-Pointer Damping at the ferromagnetic permeability resonance state of AF/F multi-layers. Black-Right-Pointing-Pointer Derivation of the ferromagnetic resonance of AF/F multi-layer films.

  5. Friction and Wear Behaviors of Nano-Silicates in Water

    Institute of Scientific and Technical Information of China (English)

    Chen Boshui; Lou Fang; Fang Jianhua; Wang Jiu; Li Jia

    2009-01-01

    Nano-metric magnesium silicate and zinc silicate with particle size of about 50--70nm were prepared in water by the method of chemical deposition. The antiwear and friction reducing abilities of the nano-silicates, as well as their compos-ites with oleie acid tri-ethanolamine (OATEA), were evaluated on a four-ball friction tester. The topographies and tribochemical features of the worn surfaces were analyzed by scanning electron microscope (SEM) and X-ray photoelectron spectroscope (XPS). Results show that nano-silicates alone provide poor antiwear and friction reducing abilities in water, but exhibits excellent synergism with OATEA in reducing friction and wear. The synergism in reducing friction and wear between naao-silicates and OATEA does exist almost regardless of particle sizes and species, and may be attributed, on one hand, to the formation of an adsorption film of OATEA, and, on the other hand, to the formation oftdbochemical species of silicon dioxide and iron oxides on the friction surfaces. Tribo-reactions and tribo-adsorptions of nano-silicates and OATEA would produce hereby an effective composite boondary lubrication film, which could efficiently enhance the anti-wear and friction-reducing abilities of water.

  6. Silicates in Alien Asteroids

    Science.gov (United States)

    2009-01-01

    This plot of data from NASA's Spitzer Space Telescopes shows that asteroid dust around a dead 'white dwarf' star contains silicates a common mineral on Earth. The data were taken primarily by Spitzer's infrared spectrograph, an instrument that breaks light apart into its basic constituents. The yellow dots show averaged data from the spectrograph, while the orange triangles show older data from Spitzer's infrared array camera. The white dwarf is called GD 40.

  7. Silicates in Alien Asteroids

    Science.gov (United States)

    2009-01-01

    This plot of data from NASA's Spitzer Space Telescopes shows that asteroid dust around a dead 'white dwarf' star contains silicates a common mineral on Earth. The data were taken primarily by Spitzer's infrared spectrograph, an instrument that breaks light apart into its basic constituents. The yellow dots show averaged data from the spectrograph, while the orange triangles show older data from Spitzer's infrared array camera. The white dwarf is called GD 40.

  8. Thermochemistry of Silicates

    Science.gov (United States)

    Costa, Gustavo; Jacobson, Nathan

    2015-01-01

    The thermodynamic properties of vapor and condensed phases of silicates are crucial in many fields of science. These quantities address fundamental questions on the formation, stability, transformation, and physical properties of silicate minerals and silicate coating compositions. Here the thermodynamic activities of silica and other species in solid solution have been measured by the analysis of the corresponding high temperature vapors using Knudsen Effusion Mass Spectrometry (KEMS). In first set of experiments KEMS has been used to examine the volatility sequence of species (Fe, SiO, Mg, O2 and O) present in the vapor phase during heating of fosterite-rich olivine (Fo93Fa7) up to 2400 C and to measure the Fe, SiO and Mg activities in its solid solution. The data of fosterite-rich olivine are essential for thermochemical equilibrium models to predict the atmospheric and surface composition of hot, rocky exoplanets (Lava Planets). In the second set of experiments the measured thermodynamic activities of the silica in Y2O3-SiO2 and Yb2O3-SiO2 systems are used to assess their reactivity and degradation recession as environmental barrier coatings (EBCs) in combustion environments (e.g. non-moveable parts of gas turbine engine).

  9. Stability of foams in silicate melts

    Science.gov (United States)

    Proussevitch, Alexander A.; Sahagian, Dork L.; Kutolin, Vladislav A.

    1993-12-01

    Bubble coalescence and the spontaneous disruption of high-porosity foams in silicate melts are the result of physical expulsion of interpore melt (syneresis) leading to bubble coalescence, and diffusive gas exchange between bubbles. Melt expulsion can be achieved either along films between pairs of bubbles, or along Plateau borders which represent the contacts between 3 or more bubbles. Theoretical evaluation of these mechanisms is confirmed by experimental results, enabling us to quantify the relevant parameters and determine stable bubble size and critical film thickness in a foam as a function of melt viscosity, surface tension, and time. Foam stability is controlled primarily by melt viscosity and time. Melt transport leading to coalescence of bubbles proceeds along inter-bubble films for smaller bubbles, and along Plateau borders for larger bubbles. Thus the average bubble size accelerates with time. In silicate melts, the diffusive gas expulsion out of a region of foam is effective only for water (and even then, only at small length scales), as the diffusion of CO 2 is negligible. The results of our analyses are applicable to studies of vesicularity of lavas, melt degassing, and eruption mechanisms.

  10. 俘获和去俘获对Au/HfO2界面导电机制的影响%Trapping and Detrapping Effects on Current Conduction Mechanisms at Interface of Au/HfO2 High-k Films

    Institute of Scientific and Technical Information of China (English)

    张育潜; 傅莉

    2015-01-01

    主要研究了经不同温度退火后HfO2高k栅介质薄膜的电流电压特性,结果表明,在栅极入射下,漏电流与Au/HfO2界面处的陷阱密度密切相关,在高电场下,Au/HfO2/p-Si结构的主要导电机制为Schottky发射和Poole-Frenkel发射.研究了电压应力对栅介质薄膜稳定性的影响,由于局部导电通道的形成,经时电介质击穿(TDDB)现象被观察到.

  11. Pulsed inductive HF laser

    Energy Technology Data Exchange (ETDEWEB)

    Razhev, A M; Kargapol' tsev, E S [Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation); Churkin, D S; Demchuk, S V [Novosibirsk State University, Novosibirsk (Russian Federation)

    2016-03-31

    We report the results of experimentally investigated dependences of temporal, spectral and spatial characteristics of an inductive HF-laser generation on the pump conditions. Gas mixtures H{sub 2} – F{sub 2}(NF{sub 3} or SF6{sub 6}) and He(Ne) – H{sub 2} – F{sub 2}(NF{sub 3} or SF{sub 6}) were used as active media. The FWHM pulse duration reached 0.42 μs. This value corresponded to a pulsed power of 45 kW. For the first time, the emission spectrum of an inductive HF laser was investigated, which consisted of seven groups of bands with centres around the wavelengths of 2732, 2736, 2739, 2835, 2837, 2893 and 2913 nm. The cross section profile of the laser beam was a ring with a diameter of about 20 mm and width of about 5 mm. Parameters of laser operation in the repetitively pulsed regime were sufficiently stable. The amplitude instability of light pulses was no greater than 5% – 6%. (lasers)

  12. Core formation in silicate bodies

    Science.gov (United States)

    Nimmo, F.; O'Brien, D. P.; Kleine, T.

    2008-12-01

    Differentiation of a body into a metallic core and silicate mantle occurs most efficiently if temperatures are high enough to allow at least the metal to melt [1], and is enhanced if matrix deformation occurs [2]. Elevated temperatures may occur due to either decay of short-lived radio-isotopes, or gravitational energy release during accretion [3]. For bodies smaller than the Moon, core formation happens primarily due to radioactive decay. The Hf-W isotopic system may be used to date core formation; cores in some iron meteorites and the eucrite parent body (probably Vesta) formed within 1 My and 1-4~My of solar system formation, respectively [4]. These formation times are early enough to ensure widespread melting and differentiation by 26Al decay. Incorporation of Fe60 into the core, together with rapid early mantle solidification and cooling, may have driven early dynamo activity on some bodies [5]. Iron meteorites are typically depleted in sulphur relative to chondrites, for unknown reasons [6]. This depletion contrasts with the apparently higher sulphur contents of cores in larger planetary bodies, such as Mars [7], and also has a significant effect on the timing of core solidification. For bodies of Moon-size and larger, gravitational energy released during accretion is probably the primary cause of core formation [3]. The final stages of accretion involve large, stochastic collisions [8] between objects which are already differentiated. During each collision, the metallic cores of the colliding objects merge on timescales of a few hours [9]. Each collision will reset the Hf-W isotopic signature of both mantle and core, depending on the degree to which the impactor core re-equilibrates with the mantle of the target [10]. The re-equilibration efficiency depends mainly on the degree to which the impactor emulsifies [11], which is very uncertain. Results from N-body simulations [8,12] suggest that significant degrees of re- equilibration are required [4,10]. Re

  13. Electrical and structural characterization of PLD grown CeO2–HfO2 laminated high-k gate dielectrics

    NARCIS (Netherlands)

    Karakaya, K.; Barcones, B.; Rittersma, Z.M.; Berkum, van J.G.M.; Verheijen, M.A.; Rijnders, G.; Blank, D.H.A.

    2006-01-01

    The electrical and physical properties of CeO2–HfO2 nanolaminates deposited by pulsed laser deposition (PLD) are investigated. The properties of the nanolaminates are compared with binary CeO2 and HfO2 thin films. Layers were deposited using CeO2 and HfO2 targets at substrate temperatures between 22

  14. Effects of sol aging on resistive switching behaviors of HfO{sub x} resistive memories

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Chih-Chieh, E-mail: cchsu@yuntech.edu.tw [Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China); Sun, Jhen-Kai; Tsao, Che-Chang; Chen, Yu-Ting [Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Taiwan, ROC (China)

    2017-03-01

    This work investigates effects of long-term sol-aging time on sol-gel HfO{sub x} resistive random access memories (RRAMs). A nontoxic solvent of ethanol is used to replace toxic 2-methoxyethanol, which is usually used in sol-gel processes. The top electrodes are fabricated by pressing indium balls onto the HfO{sub x} surface rather than by using conventional sputtering or evaporation processes. The maximum process temperature is limited to be 100 ℃. Therefore, influences of plasma and high temperature on HfO{sub x} film can be avoided. Under this circumstance, effects of sol aging time on the HfO{sub x} films can be more clearly studied. The current conduction mechanisms in low and high electric regions of the HfO{sub x} RRAM are found to be dominated by Ohmic conduction and trap-filled space charge limited conduction (TF-SCLC), respectively. When the sol aging time increases, the resistive switching characteristic of the HfO{sub x} layer becomes unstable and the transition voltage from Ohmic conduction to TF-SCLC is also increased. This suggests that an exceedingly long aging time will give a HfO{sub x} film with more defect states. The XPS results are consistent with FTIR analysis and they can further explain the unstable HfO{sub x} resistive switching characteristic induced by sol aging.

  15. Effects of sol aging on resistive switching behaviors of HfOx resistive memories

    Science.gov (United States)

    Hsu, Chih-Chieh; Sun, Jhen-Kai; Tsao, Che-Chang; Chen, Yu-Ting

    2017-03-01

    This work investigates effects of long-term sol-aging time on sol-gel HfOx resistive random access memories (RRAMs). A nontoxic solvent of ethanol is used to replace toxic 2-methoxyethanol, which is usually used in sol-gel processes. The top electrodes are fabricated by pressing indium balls onto the HfOx surface rather than by using conventional sputtering or evaporation processes. The maximum process temperature is limited to be 100 ℃. Therefore, influences of plasma and high temperature on HfOx film can be avoided. Under this circumstance, effects of sol aging time on the HfOx films can be more clearly studied. The current conduction mechanisms in low and high electric regions of the HfOx RRAM are found to be dominated by Ohmic conduction and trap-filled space charge limited conduction (TF-SCLC), respectively. When the sol aging time increases, the resistive switching characteristic of the HfOx layer becomes unstable and the transition voltage from Ohmic conduction to TF-SCLC is also increased. This suggests that an exceedingly long aging time will give a HfOx film with more defect states. The XPS results are consistent with FTIR analysis and they can further explain the unstable HfOx resistive switching characteristic induced by sol aging.

  16. Suspended HfO{sub 2} photonic crystal slab on III-nitride/Si platform

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo [Nanjing University of Posts and Telecommunications, Grueenberg Research Centre, Nanjing, Jiang-Su (China)

    2014-06-15

    We present here the fabrication of suspended hafnium oxide (HfO{sub 2}) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO{sub 2} photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO{sub 2} film, and suspended HfO{sub 2} photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO{sub 2} nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

  17. Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

    Directory of Open Access Journals (Sweden)

    Lifeng Liu

    2015-01-01

    Full Text Available HfAlO2 based resistive random access memory (RRAM devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated. Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2 based RRAM devices with the ozone treatment is significantly improved. The uniformity improvement of HfAlO2 based RRAM devices is related to changes in compositional and structural properties of the HfAlO2 resistive switching film with the ozone treatment.

  18. Core Formation Timescale, Silicate-Metal Equilibration, and W Diffusivity

    Science.gov (United States)

    Yin, Q.; Jacobsen, B.; Tinker, D.; Lesher, C.

    2004-12-01

    The extent to which material accreted to the proto-Earth and segregated to form the core was chemically and isotopically equilibrated with the silicate mantle is an outstanding problem in planetary science. This is particularly important when attempting to assign a meaningful age for planetary accretion and core formation based on Hf-W isotope systematics. The Earth and other terrestrial planets likely formed by accretion of previously differentiated planetesimals. For the planetesimals themselves the most important energy source for metal-silicate differentiation is the combined radioactive heating due to decay of 26Al (half-life 0.7 Ma) and 60Fe (half-life 1.5 Ma). It is expected that the fractionation of Hf and W during planetesimal core formation will lead to a divergence in the W isotopic compositions of the core and silicate portions of these bodies. This expectation is supported by the enormously radiogenic 182W signatures reported for basaltic eucrites. The observation that the W isotopic compositions of the silicate portions of Earth, Moon and Mars are similar and markedly less radiogenic than eucrites suggests that during planet accretion the pre-differentiated metallic core material containing low 182W must have equilibrated extensively with the more radiogenic (high 182W) silicate material to subdue the ingrowth of 182W in the silicate mantle of the planets. The standard theory of planet formation predicts that after runaway and oligarchic growth, the late stage of planet formation is characterized by impact and merging of Mars-sized objects. This is a tremendously energetic process estimated to raise the temperature of the proto-Earth to about 7000K (a temperature equivalent to a mass spectrometer's plasma source, which indiscriminately ionizes all incoming elements). After the giant impacts, the proto-Earth had a luminosity and surface temperature close to a low mass star for a brief period of time. Stevenson (1990) argued that emulsification caused

  19. Atomic scale engineering of HfO{sub 2}-based dielectrics for future DRAM applications

    Energy Technology Data Exchange (ETDEWEB)

    Dudek, Piotr

    2011-02-14

    Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO{sub 2} thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO{sub 2} (BaHfO{sub 3}) films and Ti-added BaHfO{sub 3} (BaHf{sub 0.5}Ti{sub 0.5}O{sub 3}) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO{sub 3} (k{proportional_to}38) and BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} (k{proportional_to}90) with respect to monoclinic HfO{sub 2} (k{proportional_to}19). Meanwhile the CET values scaled down to 1 nm for BaHfO{sub 3} and {proportional_to}0.8 nm for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} with respect to HfO{sub 2} (CET=1.5 nm). The Hf{sup 4+} ions substitution in BaHfO{sub 3} by Ti{sup 4+} ions led to a significant decrease of thermal budget from 900 C for BaHfO{sub 3} to 700 C for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3}. Future studies need to focus

  20. Aperture-time of oxygen-precursor for minimum silicon incorporation into the interface-layer in atomic layer deposition-grown HfO{sub 2}/Si nanofilms

    Energy Technology Data Exchange (ETDEWEB)

    Mani-Gonzalez, Pierre Giovanni [CINVESTAV-Unidad Querétaro, Querétaro 76230, Querétaro, Mexico and Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Ave. Del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); Vazquez-Lepe, Milton Oswaldo [CINVESTAV-Unidad Querétaro, Querétaro 76230, Querétaro, Mexico and Departamento de Ingeniería de Proyectos, Universidad de Guadalajara, Guadalajara 45100, Jalisco (Mexico); Herrera-Gomez, Alberto, E-mail: aherrera@qro.cinvestav.mx [CINVESTAV-Unidad Querétaro, Querétaro 76230, Querétaro (Mexico)

    2015-01-15

    Hafnium oxide nanofilms were grown with atomic layer deposition on H-terminated Si (001) wafers employing tetrakis dimethyl amino hafnium (TDMA-Hf) and water as precursors. While the number of cycles (30) and the aperture-time for TDMA-Hf (0.08 s) were kept constant, the aperture-time (τ{sub H{sub 2O}}) for the oxidant-agent (H{sub 2}O) was varied from 0 to 0.10 s. The structure of the films was characterized with robust analysis employing angle-resolved x-ray photoelectron spectroscopy. In addition to a ∼1 nm hafnium oxide layer, a hafnium silicate interface layer, also ∼1 nm thick, is formed for τ{sub H{sub 2O}} > 0. The incorporation degree of silicon into the interface layer (i.e., the value of 1 − x in Hf{sub x}Si{sub 1−x}O{sub y}) shows a minimum of 0.32 for τ{sub H{sub 2O}} = 0.04 s. By employing the simultaneous method during peak-fitting analysis, it was possible to clearly resolve the contribution from the silicate and from oxide to the O 1s spectra, allowing for the assessment of the oxygen composition of each layer as a function of oxidant aperture time. The uncertainties of the peak areas and on the thickness and composition of the layers were calculated employing a rigorous approach.

  1. HF Interference, Procedures and Tools (Interferences HF, procedures et outils)

    Science.gov (United States)

    2007-06-01

    such sources. The existing HF background noise possibly may be increased via ground wave and/or sky wave propagation. Increase of the existing HF...télécommunications filaires à large bande. Les télécommunications via le réseau électrique courant, dites PowerLine Communications (PLT ou PLC) et diverses...cumulative de nombreuses sources de même type. Le bruit de fond HF existant risque d’être augmenté par propagation de l’onde terrestre et/ou aérienne

  2. Final report on the safety assessment of aluminum silicate, calcium silicate, magnesium aluminum silicate, magnesium silicate, magnesium trisilicate, sodium magnesium silicate, zirconium silicate, attapulgite, bentonite, Fuller's earth, hectorite, kaolin, lithium magnesium silicate, lithium magnesium sodium silicate, montmorillonite, pyrophyllite, and zeolite.

    Science.gov (United States)

    Elmore, Amy R

    2003-01-01

    This report reviews the safety of Aluminum, Calcium, Lithium Magnesium, Lithium Magnesium Sodium, Magnesium Aluminum, Magnesium, Sodium Magnesium, and Zirconium Silicates, Magnesium Trisilicate, Attapulgite, Bentonite, Fuller's Earth, Hectorite, Kaolin, Montmorillonite, Pyrophyllite, and Zeolite as used in cosmetic formulations. The common aspect of all these claylike ingredients is that they contain silicon, oxygen, and one or more metals. Many silicates occur naturally and are mined; yet others are produced synthetically. Typical cosmetic uses of silicates include abrasive, opacifying agent, viscosity-increasing agent, anticaking agent, emulsion stabilizer, binder, and suspending agent. Clay silicates (silicates containing water in their structure) primarily function as adsorbents, opacifiers, and viscosity-increasing agents. Pyrophyllite is also used as a colorant. The International Agency for Research on Cancer has ruled Attapulgite fibers >5 microm as possibly carcinogenic to humans, but fibers mining and processing of Aluminum Silicate, Calcium Silicate, Zirconium Silicate, Fuller's Earth, Kaolin, Montmorillonite, Pyrophyllite, and Zeolite. The Cosmetic Ingredient Review (CIR. The Cosmetic Ingredient Review (CIR) Expert Panel concluded that the extensive pulmonary damage in humans was the result of direct occupational inhalation of the dusts and noted that lesions seen in animals were affected by particle size, fiber length, and concentration. The Panel considers that most of the formulations are not respirable and of the preparations that are respirable, the concentration of the ingredient is very low. Even so, the Panel considered that any spray containing these solids should be formulated to minimize their inhalation. With this admonition to the cosmetics industry, the CIR Expert Panel concluded that these ingredients are safe as currently used in cosmetic formulations. The Panel did note that the cosmetic ingredient, Talc, is a hydrated magnesium silicate

  3. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    Science.gov (United States)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of

  4. Marburg Hemorrhagic Fever (Marburg HF)

    Science.gov (United States)

    ... CDC Cancel Submit Search The CDC Marburg hemorrhagic fever (Marburg HF) Note: Javascript is disabled or is ... first recognized in 1967, when outbreaks of hemorrhagic fever occurred simultaneously in laboratories in Marburg and Frankfurt, ...

  5. Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation

    Institute of Scientific and Technical Information of China (English)

    Li Ye; Jiang Tingting; Sun Qingqing; Wang Pengfei; Ding Shijin; Zhang Wei

    2012-01-01

    HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2.A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing.The composition,the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment.With a nitrogen concentration increase from 1.41 to 7.45%,the bandgap of the films decreased from 5.82 to 4.94 eV.

  6. Hf Transition Probabilities and Abundances

    CERN Document Server

    Lawler, J E; Labby, Z E; Sneden, C; Cowan, J J; Ivans, I I

    2006-01-01

    Radiative lifetimes from laser-induced fluorescence measurements, accurate to about +/- 5 percent, are reported for 41 odd-parity levels of Hf II. The lifetimes are combined with branching fractions measured using Fourier transform spectrometry to determine transition probabilities for 150 lines of Hf II. Approximately half of these new transition probabilities overlap with recent independent measurements using a similar approach. The two sets of measurements are found to be in good agreement for measurements in common. Our new laboratory data are applied to refine the hafnium photospheric solar abundance and to determine hafnium abundances in 10 metal-poor giant stars with enhanced r-process abundances. For the Sun we derive log epsilon (Hf) = 0.88 +/- 0.08 from four lines; the uncertainty is dominated by the weakness of the lines and their blending by other spectral features. Within the uncertainties of our analysis, the r-process-rich stars possess constant Hf/La and Hf/Eu abundance ratios, log epsilon (Hf...

  7. Environmental silicate nano-biocomposites

    CERN Document Server

    Pollet, Eric

    2012-01-01

    Environmental Silicate Nano-Biocomposites focuses on nano-biocomposites, which are obtained by the association of silicates such as bioclays with biopolymers. By highlighting recent developments and findings, green and biodegradable nano-composites from both renewable and biodegradable polymers are explored. This includes coverage of potential markets such as packaging, agricultures, leisure and the fast food industry. The knowledge and experience of more than twenty international experts in diverse fields, from chemical and biochemical engineering to applications, is brought together in four different sections covering: Biodegradable polymers and Silicates, Clay/Polyesters Nano-biocomposites, Clay/Agropolymers Nano-biocomposites, and Applications and biodegradation of Nano-biocomposites. By exploring the relationships between the biopolymer structures, the processes, and the final properties Environmental Silicate Nano-Biocomposites explains how to design nano-materials to develop new, valuable, environmenta...

  8. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Directory of Open Access Journals (Sweden)

    Masaharu Kobayashi

    2016-02-01

    Full Text Available Internet-of-Things (IoT technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  9. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Science.gov (United States)

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-02-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  10. Soft X-Ray Irradiation of Silicates: Implications for Dust Evolution in Protoplanetary Disks

    Science.gov (United States)

    Ciaravella, A.; Cecchi-Pestellini, C.; Chen, Y.-J.; Muñoz Caro, G. M.; Huang, C.-H.; Jiménez-Escobar, A.; Venezia, A. M.

    2016-09-01

    The processing of energetic photons on bare silicate grains was simulated experimentally on silicate films submitted to soft X-rays of energies up to 1.25 keV. The silicate material was prepared by means of a microwave assisted sol-gel technique. Its chemical composition reflects the Mg2SiO4 stoichiometry with residual impurities due to the synthesis method. The experiments were performed using the spherical grating monochromator beamline at the National Synchrotron Radiation Research Center in Taiwan. We found that soft X-ray irradiation induces structural changes that can be interpreted as an amorphization of the processed silicate material. The present results may have relevant implications in the evolution of silicate materials in X-ray-irradiated protoplanetary disks.

  11. Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thickness

    Directory of Open Access Journals (Sweden)

    Jun Li

    2013-10-01

    Full Text Available RF magnetron sputtered HfInZnO film and atomic layer deposition (ALD Al2O3 film were employed for thin film transistors (TFTs as channel layer and gate insulator, respectively. To achieve HfInZnO-TFT with high performance and good bias stability, the thickness of HfInZnO active layer was optimized. The performance of HfInZnO-TFTs was found to be thickness dependent. As the HfInZnO active layer got thicker, the leakage current greatly increased from 1.73 × 10−12 to 2.54 × 10−8 A, the threshold voltage decreased from 7.4 to −4.7 V, while the subthreshold swing varied from 0.41 to 1.07 V/decade. Overall, the HfInZnO film showed superior performance, such as saturation mobility of 6.4 cm2/V s, threshold voltage of 4.2 V, subthreshold swing of 0.43 V/decade, on/off current ratio of 3 × 107 and Vth shift of 3.6 V under VGS = 10 V for 7200 s. The results demonstrate the possibility of fabricating TFTs using HfInZnO film as active layer and using ALD Al2O3 as gate insulator.

  12. U-Pb ages and Hf isotope compositions of zircons in plutonic rocks from the central Famatinian arc, Argentina

    Science.gov (United States)

    Otamendi, Juan E.; Ducea, Mihai N.; Cristofolini, Eber A.; Tibaldi, Alina M.; Camilletti, Giuliano C.; Bergantz, George W.

    2017-07-01

    The Famatinian arc formed around the South Iapetus rim during the Ordovician, when oceanic lithosphere subducted beneath the West Gondwana margin. We present combined in situ U-Th-Pb and Lu-Hf isotope analyses for zircon to gain insights into the origin and evolution of Famatinian magmatism. Zircon crystals sampled from four intermediate and silicic plutonic rocks confirm previous observations showing that voluminous magmatism took place during a relatively short pulse between the Early and Middle Ordovician (472-465 Ma). The entire zircon population for the four plutonic rocks yields coherent εHf negative values and spreads over several ranges of initial εHf(t) units (-0.3 to -8.0). The range of εHf units in detrital zircons of Famatinian metasedimentary rocks reflects a prolonged history of the cratonic sources during the Proterozoic to the earliest Phanerozoic. Typical tonalites and granodiorites that contain zircons with evolved Hf isotopic compositions formed upon incorporating (meta)sedimentary materials into calc-alkaline metaluminous magmas. The evolved Hf isotope ratios of zircons in the subduction related plutonic rocks strongly reflect the Hf isotopic character of the metasedimentary contaminant, even though the linked differentiation and growth of the Famatinian arc crust was driven by ascending and evolving mantle magmas. Geochronology and Hf isotope systematics in plutonic zircons allow us understanding the petrogenesis of igneous series and the provenance of magma sources. However, these data could be inadequate for computing model ages and supporting models of crustal evolution.

  13. Distribution of p-process 174Hf in early solar system materials and the origin of nucleosynthetic Hf and W isotope anomalies in Ca-Al rich inclusions

    Science.gov (United States)

    Peters, Stefan T. M.; Münker, Carsten; Pfeifer, Markus; Elfers, Bo-Magnus; Sprung, Peter

    2017-02-01

    Some nuclides that were produced in supernovae are heterogeneously distributed between different meteoritic materials. In some cases these heterogeneities have been interpreted as the result of interaction between ejecta from a nearby supernova and the nascent solar system. Particularly in the case of the oldest objects that formed in the solar system - Ca-Al rich inclusions (CAIs) - this view is confirm the hypothesis that a nearby supernova event facilitated or even triggered solar system formation. We present Hf isotope data for bulk meteorites, terrestrial materials and CAIs, for the first time including the low-abundance isotope 174Hf (∼0.16%). This rare isotope was likely produced during explosive O/Ne shell burning in massive stars (i.e., the classical "p-process"), and therefore its abundance potentially provides a sensitive tracer for putative heterogeneities within the solar system that were introduced by supernova ejecta. For CAIs and one LL chondrite, also complementary W isotope data are reported for the same sample cuts. Once corrected for small neutron capture effects, different chondrite groups, eucrites, a silicate inclusion of a IAB iron meteorite, and terrestrial materials display homogeneous Hf isotope compositions including 174Hf. Hafnium-174 was thus uniformly distributed in the inner solar system when planetesimals formed at the system composition, and also variable r-process (or s-process) Hf and W contributions. Based on combined Hf and W isotope compositions, we show that CAIs sampled at least one component in which the proportion of r- and s-process derived Hf and W deviates from that of supernova ejecta. The Hf and W isotope anomalies in CAIs are therefore best explained by selective processing of presolar carrier phases prior to CAI formation, and not by a late injection of supernova materials. Likewise, other isotope anomalies in additional elements in CAIs relative to the bulk solar system may reflect the same process. The isotopic

  14. Hf-W chronometry of core formation in planetesimals inferred from weakly irradiated iron meteorites

    Science.gov (United States)

    Kruijer, Thomas S.; Sprung, Peter; Kleine, Thorsten; Leya, Ingo; Burkhardt, Christoph; Wieler, Rainer

    2012-12-01

    The application of Hf-W chronometry to determine the timescales of core formation in the parent bodies of magmatic iron meteorites is severely hampered by 182W burnout during cosmic ray exposure of the parent meteoroids. Currently, no direct method exists to correct for the effects of 182W burnout, making the Hf-W ages for iron meteorites uncertain. Here we present noble gas and Hf-W isotope systematics of iron meteorite samples whose W isotopic compositions remained essentially unaffected by cosmic ray interactions. Most selected samples have concentrations of cosmogenic noble gases at or near the lowermost level observed in iron meteorites and, for iron meteorite standards, have very low noble gas and radionuclide based cosmic ray exposure ages (Mbosi), however, has elevated ɛ182W relative to the other investigated irons, indicating metal-silicate separation ˜2-3 Myr later than in the parent bodies of the three major iron meteorite groups studied here.

  15. High-reflectivity HfO2/SiO2 ultraviolet mirrors.

    Science.gov (United States)

    Torchio, Philippe; Gatto, Alexandre; Alvisi, Marco; Albrand, Gérard; Kaiser, Norbert; Amra, Claude

    2002-06-01

    High-reflectivity dense multilayer coatings were produced for the ultraviolet spectral region. Thin-film single layers and UV mirrors were deposited by ion plating and plasma ion-assisted deposition high-energetic technologies. Optical characterizations of HfO2 and SiO2 single layers are made. The optical constants obtained for these two materials are presented. HfO2 and SiO2 mirrors with a reflectance of approximately 99% near 250 nm are reported.

  16. Stardust silicates from primitive meteorites.

    Science.gov (United States)

    Nagashima, Kazuhide; Krot, Alexander N; Yurimoto, Hisayoshi

    2004-04-29

    Primitive chondritic meteorites contain material (presolar grains), at the level of a few parts per million, that predates the formation of our Solar System. Astronomical observations and the chemical composition of the Sun both suggest that silicates must have been the dominant solids in the protoplanetary disk from which the planets of the Solar System formed, but no presolar silicates have been identified in chondrites. Here we report the in situ discovery of presolar silicate grains 0.1-1 microm in size in the matrices of two primitive carbonaceous chondrites. These grains are highly enriched in 17O (delta17O(SMOW) > 100-400 per thousand ), but have solar silicon isotopic compositions within analytical uncertainties, suggesting an origin in an oxygen-rich red giant or an asymptotic giant branch star. The estimated abundance of these presolar silicates (3-30 parts per million) is higher than reported for other types of presolar grains in meteorites, consistent with their ubiquity in the early Solar System, but is about two orders of magnitude lower than their abundance in anhydrous interplanetary dust particles. This result is best explained by the destruction of silicates during high-temperature processing in the solar nebula.

  17. Effect of silicate pretreatment, post-sealing and additives on corrosion resistance of phosphated galvanized steel

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Sodium silicate (water glass) pretreatment before phosphating, silicate post-sealing after phosphating and adding silicate to a traditional phosphating solution were respectively carried out to obtain the improved phosphate coatings with high corrosion resistance and coverage on hot-dip galvanized(HDG) steel. The corrosion resistance, morphology and chemical composition of the coatings were investigated using neutral salt spray(NSS) tests, scanning electron microscopy(SEM) and energy dispersive spectroscopy(EDS). The results show that pretreatment HDG steel with silicate solutions, phosphate coatings with finer crystals and higher coverage are formed and the corrosion resistance is enhanced. Adding silicate to a traditional phosphating solution, the surface morphology of the coatings is nearly unchanged. The corrosion resistance of the coatings is mainly dependent on phosphating time.Phosphating for a longer time (such as 5 min), the corrosion resistance, increasing with concentration of silicate, is improved significantly. Post-sealing the phosphated HDG steel with silicate solutions, the pores among the zinc phosphate crystals are sealed with the films containing Si, P, O and Zn and the continuous composite coatings are formed. The corrosion resistance of the composite coatings, related to the pH value, contents of hydrated gel of silica and Si2O52- and post-sealing time, is increased markedly. The improved coatings with optimal corrosion resistance are obtained for phosphating 5 min and post-sealing with 5 g/L silicate solution for 10 min.

  18. Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlO{sub x} structures for non-volatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Faita, F. L., E-mail: fabriciofaita@gmail.com [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Departamento de Física, Universidade Federal de Santa Catarina, Campus Trindade, 88040-900 Florianópolis, SC (Brazil); Silva, J. P. B., E-mail: josesilva@fisica.uminho.pt [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, 4169-007 Porto (Portugal); Pereira, M.; Gomes, M. J. M. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-12-14

    In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlO{sub x} layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlO{sub x}(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlO{sub x} thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are ≈10{sup 2} and ≈5 × 10{sup 5}, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.

  19. NON-AUTOCLAVE SILICATE BRICK

    Directory of Open Access Journals (Sweden)

    V. N. Yaglov

    2015-01-01

    Full Text Available The paper proposes a technology for obtaining bricks on the basis of lime-silica mixtures where chemical interactions are practically completely realized in dispersive state at the stage of preparation of binding contact maturing and raw mixture as a whole. The role of forming operation (moulding is changed in principle because in this case conversion of dispersive system into a rock-like solid occurs and due to this the solid obtains complete water-resistance in contact with water immediately after forming operation. Theoretical basis for the developed technology is capability of silicate dispersive substances (hydrated calcium silicate to transit in non-stable state, to form a rock-like water-resistant solid in the moment of mechanical load application during forming process. Specific feature of the proposed method is an exclusion of additional operations for autoclaving of products from the process of obtaining a silicate brick.Synthetic hydrated calcium silicate in contrast to natural ones are more uniform in composition and structure, they contain less impurities and they are characterized by dispersive composition and due to the mentioned advantages they find wider practical application. Contact-condensation binders permit to manipulate product properties on their basis and ensure maximum correspondence to the requirements of the concrete application. Raw material sources for obtaining synthetic hydrated calcium silicates are practically un-limited because calcium-silicon containing substances are found as in various technogenic wastes so in natural compounds as well. So the problem for obtaining hydrated calcium silicates having contact-condensation ability for structure formation becomes more and more actual one. This transition is considered as dependent principally on arrangement rate of substance particles which determined the level of its instability.

  20. The role of phosphates for the Lu-Hf chronology of meteorites

    Science.gov (United States)

    Debaille, Vinciane; Van Orman, James; Yin, Qing-Zhu; Amelin, Yuri

    2017-09-01

    The 176Lu-176Hf isotopic system is widely used for dating and tracing cosmochemical and geological processes, but still suffers from two uncertainties. First, Lu-Hf isochrons for some early Solar System materials have excess slope of unknown origin that should not be expected for meteorites with ages precisely determined with other isotopic chronometers. This observation translates to an apparent Lu decay constant higher than the one calculated by comparing ages obtained with various dating methods on terrestrial samples. Second, unlike the well constrained Sm/Nd value (to within 2%) for the chondritic uniform reservoir (CHUR), the Lu/Hf ratios in chondrites vary up to 18% when considering all chondrites, adding uncertainty to the Lu/Hf CHUR value. In order to better understand the Lu-Hf systematics of chondrites, we analyzed mineral fractions from the Richardton H5 chondrite to construct an internal Lu-Hf isochron, and set up a numerical model to investigate the effect of preferential diffusion of Lu compared to Hf from phosphate, the phase with the highest Lu-Hf ratio in chondrites, to other minerals. The isochron yields an age of 4647 ± 210 million years (Myr) using the accepted 176Lu decay constant of 1.867 ± 0.008 ×10-11yr-1. Combining this study with the phosphate fractions measured in a previous study yields a slope of 0.08855 ± 0.00072, translating to a 176Lu decay constant of 1.862 ± 0.016 ×10-11yr-1 using the Pb-Pb age previously obtained, in agreement with the accepted value. The large variation of the Lu/Hf phosphates combined with observations in the present study identify phosphates as the key in perturbing Lu-Hf dating and generating the isochron slope discrepancy. This is critical as apatite has substantially higher diffusion rates of rare earth elements than most silicate minerals that comprise stony meteorites. Results of numerical modeling depending of temperature peak, size of the grains and duration of the metamorphic event, show that

  1. Microstructure and Corrosion Behavior of Hf-40 Wt Pct Ti Alloy in Nitric Acid Medium for Reprocessing Applications

    Science.gov (United States)

    Jayaraj, J.; Ravi, K. R.; Mallika, C.; Kamachi Mudali, U.

    2016-09-01

    The Hf-40 wt pct Ti (Hf-Ti) alloy was developed for neutron poison application in the spent nuclear fuel reprocessing plant. The furnace-cooled Hf-Ti sample exhibited the microstructure comprising equiaxed-α, lamellar-α, and feathery-α. The water-quenched Hf-Ti sample confirmed the presence of lath and internally twinned martensite. In comparison to the furnace-cooled sample, low corrosion current density and passivation current density values obtained for the water-quenched Hf-Ti in 6 M HNO3 at 298 K (25 °C) indicated better passivation ability. The martensitic structure exhibited high hardness (660 HV) and negligible corrosion rate in 6 M nitric acid at 298 K (25 °C). X-ray photoelectron spectroscopic (XPS) analysis confirmed that passivation behavior of this alloy was due to the protective passive film composed of TiO2 and HfO2.

  2. 21 CFR 872.6670 - Silicate protector.

    Science.gov (United States)

    2010-04-01

    ... DEVICES DENTAL DEVICES Miscellaneous Devices § 872.6670 Silicate protector. (a) Identification. A silicate protector is a device made of silicone intended to be applied with an absorbent tipped applicator to...

  3. Antibacterial Activity of Silicate Bioceramics

    Institute of Scientific and Technical Information of China (English)

    HU Sheng; NING Congqin; ZHOU Yue; CHEN Lei; LIN Kaili; CHANG Jiang

    2011-01-01

    Four kinds of pure silicate ceramic particles, CaSiO3, Ca3SiO5, bredigite and akermanite were prepared and their bactericidal effects were systematically investigated. The phase compositions of these silicate ceramics were characterized by XRD. The ionic concentration meas urement revealed that the Calcium (Ca) ion concentration were relatively higher in Ca3SiO5 and bredigite, and much lower in CaSiO3 and akermanite. Accordingly, the pH values of the four silicate ceramics extracts showed a positive correlation with the particle concentrations. Meanwhile, by decreasing the particle size, higher Ca ion concentrations can be achieved, leading to the increase of aqueous pH value as well. In summary, all of the four silicate ceramics tested in our study showed antibacterial effect in a dose-dependent manner. Generally, the order of their antibacterial activity against E.coli from strong to weak is Ca3SiO5, bredigite, CaSiO3 and akermanite.

  4. Spectroscopic and structural investigation of undoped and Er{sup 3+} doped hafnium silicate layers

    Energy Technology Data Exchange (ETDEWEB)

    Khomenkova, L., E-mail: khomen@ukr.net [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France); V. Lashkaryov Institute of Semiconductor Physics at NASU, 41 Pr. Nauky, Kyiv 03028 (Ukraine); An, Y.-T. [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France); Khomenkov, D. [Taras Shevchenko National University of Kyiv, Faculty of Physics, 4 Pr. Hlushkov, Kyiv 03022 (Ukraine); Portier, X.; Labbé, C.; Gourbilleau, F. [CIMAP CEA/CNRS/ENSICAEN/UCBN, 6 Blvd. Maréchal Juin, 14050 Caen Cedex 4 (France)

    2014-11-15

    This paper demonstrates the functionality of radio-frequency magnetron sputtering for the fabrication of undoped and Er-doped Si-rich-HfO{sub 2} films with specific structural and spectroscopic properties. The effect of post-deposition treatment on film properties was investigated by means of Fourier-transform infrared spectroscopy, Raman scattering and photoluminescence methods, as well as Transmission Electron microscopy. It was observed that annealing treatment at 850–1000 °C causes phase separation process and the formation of HfO{sub 2}, SiO{sub 2} and pure Si phases. This process stimulates also an intense light emission in the 700–950-nm spectral range under broad band excitation. The phase separation mechanism as well as the nature of radiative transitions were discussed. Photoluminescence was ascribed to carrier recombination in silicon clusters and host defects. The appearance of silicon clusters was also confirmed by the comparison of luminescent properties of pure HfO{sub 2}, SiO{sub 2}, Si-rich-HfO{sub 2} and Si-rich-SiO{sub 2} films. Additional argument for Si clusters’ formation was obtained under investigation of Er-doped Si-rich HfO{sub 2} films. These latter demonstrated 1.54-µm Er{sup 3+} luminescence under non-resonant excitation originating from an energy transfer from Si clusters towards Er{sup 3+} ions.

  5. Amended Silicated for Mercury Control

    Energy Technology Data Exchange (ETDEWEB)

    James Butz; Thomas Broderick; Craig Turchi

    2006-12-31

    Amended Silicates{trademark}, a powdered, noncarbon mercury-control sorbent, was tested at Duke Energy's Miami Fort Station, Unit 6 during the first quarter of 2006. Unit 6 is a 175-MW boiler with a cold-side electrostatic precipitator (ESP). The plant burns run-of-the-river eastern bituminous coal with typical ash contents ranging from 8-15% and sulfur contents from 1.6-2.6% on an as-received basis. The performance of the Amended Silicates sorbent was compared with that for powdered activated carbon (PAC). The trial began with a period of baseline monitoring during which no sorbent was injected. Sampling during this and subsequent periods indicated mercury capture by the native fly ash was less than 10%. After the baseline period, Amended Silicates sorbent was injected at several different ratios, followed by a 30-day trial at a fixed injection ratio of 5-6 lb/MMACF. After this period, PAC was injected to provide a comparison. Approximately 40% mercury control was achieved for both the Amended Silicates sorbent and PAC at injection ratios of 5-6 lbs/MMACF. Higher injection ratios did not achieve significantly increased removal. Similar removal efficiencies have been reported for PAC injection trials at other plants with cold-side ESPs, most notably for plants using medium to high sulfur coal. Sorbent injection did not detrimentally impact plant operations and testing confirmed that the use of Amended Silicates sorbent does not degrade fly ash quality (unlike PAC). The cost for mercury control using either PAC or Amended Silicates sorbent was estimated to be equivalent if fly ash sales are not a consideration. However, if the plant did sell fly ash, the effective cost for mercury control could more than double if those sales were no longer possible, due to lost by-product sales and additional cost for waste disposal. Accordingly, the use of Amended Silicates sorbent could reduce the overall cost of mercury control by 50% or more versus PAC for locations where

  6. Partitioning coefficients between olivine and silicate melts

    Science.gov (United States)

    Bédard, J. H.

    2005-08-01

    Variation of Nernst partition coefficients ( D) between olivine and silicate melts cannot be neglected when modeling partial melting and fractional crystallization. Published natural and experimental olivine/liquidD data were examined for covariation with pressure, temperature, olivine forsterite content, and melt SiO 2, H 2O, MgO and MgO/MgO + FeO total. Values of olivine/liquidD generally increase with decreasing temperature and melt MgO content, and with increasing melt SiO 2 content, but generally show poor correlations with other variables. Multi-element olivine/liquidD profiles calculated from regressions of D REE-Sc-Y vs. melt MgO content are compared to results of the Lattice Strain Model to link melt MgO and: D0 (the strain compensated partition coefficient), EM3+ (Young's Modulus), and r0 (the size of the M site). Ln D0 varies linearly with Ln MgO in the melt; EM3+ varies linearly with melt MgO, with a dog-leg at ca. 1.5% MgO; and r0 remains constant at 0.807 Å. These equations are then used to calculate olivine/liquidD for these elements using the Lattice Strain Model. These empirical parameterizations of olivine/liquidD variations yield results comparable to experimental or natural partitioning data, and can easily be integrated into existing trace element modeling algorithms. The olivine/liquidD data suggest that basaltic melts in equilibrium with pure olivine may acquire small negative Ta-Hf-Zr-Ti anomalies, but that negative Nb anomalies are unlikely to develop. Misfits between results of the Lattice Strain Model and most light rare earth and large ion lithophile partitioning data suggest that kinetic effects may limit the lower value of D for extremely incompatible elements in natural situations characterized by high cooling/crystallization rates.

  7. On the scalability of doped hafnia thin films

    Science.gov (United States)

    Adelmann, C.; Schram, T.; Chew, S.-A.; Woicik, J. C.; Brizzi, S.; Tallarida, M.; Schmeisser, D.; Horiguchi, N.; Van Elshocht, S.; Ragnarsson, L.-Å.

    2014-03-01

    The scaling behavior of Gd- and Al-doped HfO2 films as gate dielectrics in metal-oxide-semiconductor (MOS) capacitors was studied. For equivalent oxide thicknesses (EOTs) in the range of 10 Å, crystallized Gd:HfO2 showed higher leakage current densities than crystallized Al:HfO2, with undoped HfO2 in between. Ultimately, the scalability of Al:HfO2 was limited by the ability to crystallize the films at a given thermal budget. As a result, for post-deposition annealing at 800 °C, the EOT of Al:HfO2 based MOS capacitors was limited to ˜8 Å. However, for such an EOT, leakage current densities were reduced by about 100× with respect to HfO2. This demonstrates the high potential of Al:HfO2 for low-standby-power MOS devices.

  8. Subduction Controls of Hf and Nd Isotopes in Lavas of the Aleutian Island Arc

    Energy Technology Data Exchange (ETDEWEB)

    Yogodzinski, Gene; Vervoort, Jeffery; Brown, Shaun Tyler; Gerseny, Megan

    2010-08-29

    The Hf and Nd isotopic compositions of 71 Quaternary lavas collected from locations along the full length of the Aleutian island arc are used to constrain the sources of Aleutian magmas and to provide insight into the geochemical behavior of Nd and Hf and related elements in the Aleutian subduction-magmatic system. Isotopic compositions of Aleutian lavas fall approximately at the center of, and form a trend parallel to, the terrestrial Hf-Nd isotopic array with {var_epsilon}{sub Hf} of +12.0 to +15.5 and {var_epsilon}{sub Nd} of +6.5 to +10.5. Basalts, andesites, and dacites within volcanic centers or in nearby volcanoes generally all have similar isotopic compositions, indicating that there is little measurable effect of crustal or other lithospheric assimilation within the volcanic plumbing systems of Aleutian volcanoes. Hafnium isotopic compositions have a clear pattern of along-arc increase that is continuous from the eastern-most locations near Cold Bay to Piip Seamount in the western-most part of the arc. This pattern is interpreted to reflect a westward decrease in the subducted sediment component present in Aleutian lavas, reflecting progressively lower rates of subduction westward as well as decreasing availability of trench sediment. Binary bulk mixing models (sediment + peridotite) demonstrate that 1-2% of the Hf in Aleutian lavas is derived from subducted sediment, indicating that Hf is mobilized out of the subducted sediment with an efficiency that is similar to that of Sr, Pb and Nd. Low published solubility for Hf and Nd in aqueous subduction fluids lead us to conclude that these elements are mobilized out of the subducted component and transferred to the mantle wedge as bulk sediment or as a silicate melt. Neodymium isotopes also generally increase from east to west, but the pattern is absent in the eastern third of the arc, where the sediment flux is high and increases from east to west, due to the presence of abundant terrigenous sediment in the

  9. HfO{sub 2} dielectric thickness dependence of electrical properties in graphene field effect transistors with double conductance minima

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Cheng; Xie, Dan, E-mail: xiedan@mail.tsinghua.edu.cn; Xu, Jian-Long; Sun, Yi-Lin; Dai, Rui-Xuan; Li, Xian [Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 (China); Li, Xin-Ming [National Center for Nanoscience and Technology, Zhongguancun, Beijing 100190 (China); Zhu, Hong-Wei [School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Materials Processing Technology of MOE, Tsinghua University, Beijing 100084 (China); Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China)

    2015-10-14

    We investigate the electrical properties in back-gated graphene field effect transistors (GFETs) with SiO{sub 2} dielectric and different thickness of high-k HfO{sub 2} dielectric. The results show that transform characteristic (I{sub ds}–V{sub gs}) curves of GFETs are uniquely W-shaped with two charge neutrality point (left and right) in both SiO{sub 2} and HfO{sub 2} dielectric (SiO{sub 2}-GFETs and HfO{sub 2}-GFETs). The gate voltage reduces drastically in HfO{sub 2}-GFETs compared with that in SiO{sub 2}-GFETs, and it becomes much smaller with the decline of HfO{sub 2} thickness. The left charge neutrality point in I{sub d}–V{sub g} curves of all HfO{sub 2}-GFETs is negative, compared to the positive ones in SiO{sub 2}-GFETs, which means that there exists n-doping in graphene with HfO{sub 2} as bottom dielectric. We speculate that this n-doping comes from the HfO{sub 2} layer, which brings fixed charged impurities in close proximity to graphene. The carrier mobility is also researched, demonstrating a decreasing trend of hole mobility in HfO{sub 2}-GFETs contrast to that in SiO{sub 2}-GFETs. In a series of HfO{sub 2}-GFETs with different HfO{sub 2} dielectric thickness, the hole mobility shows a tendency of rise when the thickness decreases to 7 nm. The possible reason might be due to the introduced impurities into HfO{sub 2} film from atomic layer deposition process, the concentration of which varies from the thickness of HfO{sub 2} layer.

  10. Effects of ionization on silicate glasses. [Silicate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Primak, W.

    1982-02-01

    This evaluation of radiation effects in silicate glasses caused by ionization is based on our own investigations, on material collected in our files (reports, articles, and notes), and on a computer literature search through recent issues of Physics Abstracts and Chemical Abstracts (and the apparently pertinent references which appeared). Some of our recent results, available heretofore only in internal correspondence, are presented in some detail. It is concluded that research into the behavior of silicate glasses generally will be required before the specific effects in the radioactive waste storage glasses can be properly understood and evaluated. Two particular neglected areas of investigation are targeted for immediate concern: a kinetic analysis of annealing data and the acquisition of data on effects of irradiation at controlled elevated temperatures.

  11. Environmentally friendly HF (DF) lasers

    Science.gov (United States)

    Apollonov, V. V.

    2016-08-01

    Dedicated to the 100th anniversary of the birth of Academician A M Prokhorov, this paper reviews the physics of self-sustained volume discharge without preionization—self-initiated volume discharge (SIVD)—in the working mixtures of non-chain hydrofluoride HF (deuterofluoride (DF)) lasers. The dynamics of SIVD in discharge gaps with different geometries is thoroughly described. The mechanisms for the restriction of current density in a diffuse channel in electric discharges in SF6 and SF6 based mixtures (which determines whether SIVD is possible) are proposed and analyzed using simple models. The most probable mechanisms are the electron impact dissociation of SF6 and other mixture components, electron-ion recombination and electron attachment to vibrationally excited SF6 molecules. Starting from a comparative analysis of the rate coefficients of these processes, it is shown that electron-ion recombination is capable of compensating for electron detachment from negative ions via electron impact. It is also established that SIVD is not only observed in SF6, but also in other strongly electronegative gases. The factors that determine the uniformity of the active medium in non-chain HF (DF) lasers are analyzed. Some special features of non-chain HF (DF) lasers with different apertures operating are carefully examined. Consideration is given to the problem of increasing the aperture and discharge volume of non-chain HF (DF) lasers. Based on our experimental results, the possibility of increasing the energy of such lasers to ~1 kJ and above is shown.

  12. In-situ atomic layer deposition growth of Hf-oxide

    Energy Technology Data Exchange (ETDEWEB)

    Karavaev, Konstantin

    2010-06-17

    We have grown HfO{sub 2} on Si(001) by atomic layer deposition (ALD) using HfCl{sub 4}, TEMAHf, TDMAHf and H{sub 2}O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl{sub 4} experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO{sub 2}. The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO{sub 2}: contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

  13. Silicate Composition of the Interstellar Medium

    CERN Document Server

    Fogerty, Shane; Watson, Dan M; Sargent, Benjamin A; Koch, Ingrid

    2016-01-01

    The composition of silicate dust in the diffuse interstellar medium and in protoplanetary disks around young stars informs our understanding of the processing and evolution of the dust grains leading up to planet formation. Analysis of the well-known 9.7{\\mu}m feature indicates that small amorphous silicate grains represent a significant fraction of interstellar dust and are also major components of protoplanetary disks. However, this feature is typically modelled assuming amorphous silicate dust of olivine and pyroxene stoichiometries. Here, we analyze interstellar dust with models of silicate dust that include non-stoichiometric amorphous silicate grains. Modelling the optical depth along lines of sight toward the extinguished objects Cyg OB2 No. 12 and {\\zeta} Ophiuchi, we find evidence for interstellar amorphous silicate dust with stoichiometry intermediate between olivine and pyroxene, which we simply refer to as "polivene." Finally, we compare these results to models of silicate emission from the Trapez...

  14. The Yellowstone hotspot in space and time: Nd and Hf isotopes insilici magmas

    Energy Technology Data Exchange (ETDEWEB)

    Nash, Barbara P.; Perkins, Michael E.; Christensen, John N.; Lee,Den-Chuen; Halliday, A.N.

    2006-04-19

    Over the course of its 16 m.y. history, the Yellowstonehotspot has produced silicic magmas exhibiting systematic, and oftensympathetic, variations in isotopic and chemical composition, temperatureand frequency of eruption. Nd and Hf isotopic ratios vary systematicallyfrom initial eruptions at ~;16 Ma, contemporaneous with basalticvolcanism in eastern Oregon and Washington, to the present dayYellowstone Volcanic Plateau. Nd and Hf isotopic ratios co-vary and spanthe range of most terrestrial samples, reflecting mixing of mantle andcrustal sources. Earliest erupted silicic magmas were hot (in excess of1050oC), relatively less evolved and have isotopic ratios within therange of contemporaneous Columbia River flood basalts. The transit of thehotspot across the lithospheric boundary between the western accretedoceanic terrain and the Precambrian craton at 15 Ma is marked by shiftsin eNd from +4 to -11 and in ?Hf from +10 to -10. The duration of thetransit yields a crustal magma source diameter of ~;70 km. In theinterval from 14 to 9 Ma, ?Nd systematically increases from -11 to -7,recording a minimum increase in the mantle component from 5 percent to 30percent. The mantle component could be twice as great, depending upon theisotopic composition of crust and mantle reservoirs. In this sameinterval, peak temperatures of ~;1000oC occurred at 9 Ma. The last 8 m.y.are characterized by less frequent eruption of lower temperature(830-900oC) and more compositionally evolved magmas.

  15. Surface characterization of silicate bioceramics.

    Science.gov (United States)

    Cerruti, Marta

    2012-03-28

    The success of an implanted prosthetic material is determined by the early events occurring at the interface between the material and the body. These events depend on many surface properties, with the main ones including the surface's composition, porosity, roughness, topography, charge, functional groups and exposed area. This review will portray how our understanding of the surface reactivity of silicate bioceramics has emerged and evolved in the past four decades, owing to the adoption of many complementary surface characterization tools. The review is organized in sections dedicated to a specific surface property, each describing how the property influences the body's response to the material, and the tools that have been adopted to analyse it. The final section introduces the techniques that have yet to be applied extensively to silicate bioceramics, and the information that they could provide.

  16. Hydrothermal Synthesis of Metal Silicates

    Institute of Scientific and Technical Information of China (English)

    Lii Kwang-Hwa

    2004-01-01

    Organically templated metal phosphates have been extensively studied because of interesting structural chemistry and potential applications in catalysis. However, in most cases the organic templates cannot be removed without collapse of the frameworks. This is in contrast to the high thermal stability and extensive applications of zeolites in refinery and petrochemical processes.Therefore, studies have been directed to the synthesis of transition metal silicates to produce more stable frameworks. Our synthetic methods are twofold, namely mild hydrothermal reactions in Teflon-lined autoclaves at 100-200 ℃ using organic amines as templates and high-temperature,high-pressure hydrothermal reactions in gold ampoules contained in a high-pressure reaction vessel at ca. 550 ℃ and 150 Mpa using alkali metal cations as templates. In this presentation I will report the high-temperature, high-pressure hydrothermal synthesis, crystal structures, and solid-state NMR spectroscopy of a number of new silicates of indium, uranium, and transition metals.

  17. Biogenic silicate accumulation in sediments, Jiaozhou Bay

    Institute of Scientific and Technical Information of China (English)

    LI Xuegang; SONG Jinming; DAI Jicui; YUAN Huamao; LI Ning; LI Fengye; SUN Song

    2006-01-01

    It has been widely recognized that low silicate content in seawater is a major limiting factor to phytoplankton primary production in Jiaozhou Bay. However the reason of Si-limitation remains poorly understood. In the present study we measured the biogenic silicate content and discussed the accumulation of silicate in Jiaozhou Bay sediment. The results show that the biogenic silica content in the sediment of the Jiaozhou Bay is obviously much higher than those in the Yellow Sea and the Bohai Sea. The BSi:TN ratios and BSi:16P ratios in the sediment are > 1 and the OC:BSi ratio in sediment is lower than these of Redfield ratio (106:16), indicating that the decomposition rate of OC is much higher than that for BSi in similar conditions. Therefore, the majority of the biogenic silicate was buried and thus did not participate in silicate recycling. Silicate accumulation in sediment may explain why Si limits the phytoplankton growth in the Jiaozhou Bay. Comparing the flux of biogenic silicate from sediments with primary production rate, it can be concluded that only 15.5% of biogenic silicate is hydrolyzed during the journey from surface to bottom in seawater, thus approximate 84.5% of biogenic silicate could reach the bottom. The silicate releasing rate from the sediment to seawater is considerably lower than that of sedimentation of biogenic silicate, indicating silicate accumulation in sediment too. In a word, the silicate accumulation in sediment is the key reason of silicate limiting to phytoplankton growth in Jiaozhou Bay.

  18. Longevity of silicate ceramic restorations.

    Science.gov (United States)

    Beier, Ulrike Stephanie; Dumfahrt, Herbert

    2014-09-01

    The demand for esthetic restorations has resulted in an increased use of dental ceramics as a biocompatible and functionally sufficient alternative to conventional restorative materials. Silicate ceramic restorations are widely used for veneers, inlays, onlays, and crowns in dentistry. Long-term data are of crucial importance to optimize clinical practice. The purpose of the present article is to summarize data of the Innsbruck ceramic evaluation up to 261 months with the focus on longevity and failure characteristics.

  19. Conduction mechanism in bismuth silicate glasses containing titanium

    Science.gov (United States)

    Dult, Meenakshi; Kundu, R. S.; Murugavel, S.; Punia, R.; Kishore, N.

    2014-11-01

    Bismuth silicate glasses mixed with different concentrations of titanium dioxide having compositions xTiO2-(60-x)Bi2O3-40SiO2 with x=0, 5, 10, 15 and 20 were prepared by the normal melt quench technique. The frequency dependence of the ac electrical conductivity of different compositions of titanium bismuth silicate glasses has been studied in the frequency range 10-1 Hz to 10 MHz and in the temperature range 623-703 K. The temperature and frequency dependent conductivity is found to obey Jonscher's universal power law for all the compositions of titanium bismuth silicate glass system. The dc conductivity (σdc), so called crossover frequency (ωH), and frequency exponent (s) have been estimated from the fitting of experimental data of ac conductivity with Jonscher's universal power law. Enthalpy to dissociate the cation from its original site next to a charge compensating center (Hf) and enthalpy of migration (Hm) have also been estimated. The conductivity data have been analyzed in terms of different theoretical models to determine the possible conduction mechanism. Analysis of the conductivity data and the frequency exponent shows that the correlated barrier hopping of electrons between Ti3+ and Ti4+ ions in the glasses is the most favorable mechanism for ac conduction. The temperature dependent dc conductivity has been analyzed in the framework of theoretical variable range hopping model (VRH) proposed by Mott which describe the hopping conduction in disordered semiconducting systems. The various polaron hopping parameters have also been deduced. Mott's VRH model is found to be in good agreement with experimental data and the values of inverse localization length of s-like wave function (α) obtained by this model with modifications suggested by Punia et al. are close to the ones reported for a number of oxide glasses.

  20. Electrical Characteristics of MOS Capacitors with HfTiON as Gate Dielectric

    Institute of Scientific and Technical Information of China (English)

    CHEN Weibing; XU Jingping; LAI Puito; LI Yanping; XU Shengguo; CHAN Chulok

    2009-01-01

    HfTiN film was deposited by co-reactive sputtering and then was annealed in dif-ferent gas ambients at temperature of 650 ℃ for 2 min to form HfTiON film. Capacitance-voltage and gate-leakage characteristics were investigated. The N2O-annealed sample exhibited small inter-face-state and oxide-charge densities, and enhanced reliability, which was attributed to the fact that nitridation could create strong Si≡N bonds to passivate dangling Si bonds and replaced strained Si-O bonds, thus forming a hardened dielectric/Si interface with high reliability. As a result, it is possible to prepare high-quality HfTiON gate dielectric of small-scaling CMOS devices in the industry-preferred N2O environment.

  1. A thirty second isomer in Hf-171

    NARCIS (Netherlands)

    Campbell, P; Billowes, J; Cochrane, ECA; Cooke, JL; Cooper, TG; Dendooven, P; Evans, DE; Grant, IS; Griffith, JAR; Honkanen, A; Huhta, M; Oinonen, M; Pearson, MR; Penttila, H; Persson, B.L.; Richardson, DS; Tungate, G; Wheeler, PD; Zybert, L; Aysto, J

    1997-01-01

    An isomer has been detected in Hf-171 with a half-life of T-1/2 = 29.5(9) s. The state was populated in the Yb-170(alpha,3n)Hf-171m reaction at a beam energy of E-alpha = 50 MeV in an on-line ion guide isotope separator. The isomeric Hf-17lm(+) beam was extracted from the ion guide, mass-analysed an

  2. 氢氟酸腐蚀对α-Fe2O3薄膜光解水电极光电化学性质的影响%Effect of HF Treatment on the Photoelectrochemical Properties of a Hematite Thin Film Photoanode for Water Splitting

    Institute of Scientific and Technical Information of China (English)

    胡玉祥; 姜春香; 方亮; 郑分刚; 董雯; 苏晓东; 沈明荣

    2014-01-01

    The effects of HF treatment on the photoelectrochemical (PEC) properties of sol-gel prepared hematite (α-Fe2O3) thin films were investigated. Pores and interstices between the grains developed on the film surface as the HF etching time increased. The photocurrent density of theα-Fe2O3 photoanode decreased within the first 5 min of etching, and then increased quickly as the etching time increased. At longer time than 15 min the photocurrent density deteriorated. Re-annealing the etched samples significantly enhanced the photocurrent density. Based on electrochemical impedance spectroscopy, Raman and X-ray photoelectron spectroscopies, we propose that two factors contribute to photocurrent density reversely: the porosity and the lowered crystal inity of theα-Fe2O3 surface because of HF treatment. A schematic model was compiled to explain the enhanced PEC activities of the etched plus re-annealedα-Fe2O3 photoanode. The PEC and water splitting measurements showed that the etched plus re-annealed photoanode is more stable than the as-prepared one.%使用溶胶-凝胶法制备了α-Fe2O3薄膜,研究了氢氟酸腐蚀薄膜表面对其光电化学性质的影响。实验发现,薄膜表面的孔洞和间隙随着氢氟酸浸蚀时间的增长而发生变化。氢氟酸浸蚀5 min,α-Fe2O3电极的光电流降低;随后随浸蚀时间增加而迅速增加;当浸蚀时间大于15 min时,其光电流再次下降,但对浸蚀过的样品再次退火可以使光电流大幅增加。通过电化学交流阻抗谱、拉曼和X射线光电子能谱分析,提出了两个影响光电流的因素:氢氟酸表面浸蚀造成薄膜表面的多孔性和结晶度降低。为此,通过示意图解释了结合浸蚀和退火后处理两个步骤来增强α-Fe2O3薄膜光解水电极光电活性的原理。相对于初始的α-Fe2O3电极,浸蚀并且再退火处理后,其光电性质更加稳定。

  3. Deposition-power-modulated optical and electrical properties of sputtering-derived HfTiO{sub x} gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Jin, P. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei, 230601 (China); He, G., E-mail: cheriling16@126.com [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei, 230601 (China); Liu, M. [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and, Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031 (China); Xiao, D.Q.; Gao, J.; Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei, 230601 (China); Ma, R. [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and, Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031 (China); Zhang, J.W.; Zhang, M.; Sun, Z.Q.; Liu, Y.M. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei, 230601 (China)

    2015-11-15

    High-k gate dielectric HfTiO{sub x} thin films have been deposited on Si and quartz substrate by radio frequency (RF) magnetron sputtering. The structural and optical properties of HfTiO{sub x} thin films related to deposition power are investigated by X-ray diffraction (XRD), ultraviolet–visible spectroscopy (UV–Vis), and spectroscopic ellipsometry (SE). Results indicate that the as-deposited HfTiO{sub x} thin films are amorphous state regardless of the deposition power. The increase of band gap of the samples is observed with the increase of deposition power. Moreover, the increase of the thickness, deposition rate, refractive index (n) and the decrease of the extinction coefficient with the increase of deposition power are also confirmed. Additionally, the electrical properties of films are analyzed by measurement of high frequency capacitance–voltage (C–V) and leakage current density-voltage (J-V) characteristics. And the leakage current conduction mechanisms are also discussed. - Highlights: • Sputtering-derived HfTiO{sub x} gate dielectrics have been deposited on Si substrates. • Increase of band gap is observed with the increase of deposition power. • HfTiO{sub x} thin film deposited at 50 W displays excellent performance. • The leakage current conduction mechanisms are also discussed in detail.

  4. Morphology of hydroxyapatite coated nanotube surface of Ti-35Nb-xHf alloys for implant materials

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-Un [Functional Coatings Group, Materials Processing Division, Korea Institute of Materials Science (KIMS), Changwon, Kyungnam (Korea, Republic of); Jeong, Yong-Hoon [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials and Research Center for Oral Disease Regulation of the Aged, Chosun University, Gwangju (Korea, Republic of); Division of Restorative and Prosthetic Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave. Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials and Research Center for Oral Disease Regulation of the Aged, Chosun University, Gwangju (Korea, Republic of)

    2011-11-01

    The purpose of this research is to study the morphology of hydroxyapatite coated nanotube surface of Ti-35Nb-xHf for implant materials using various experiments. For this study, Ti-35Nb-xHf (x = 0, 3, 7 and 15 wt.%) alloys were prepared by arc melting and heat treated for 12 h at 1000 Degree-Sign C in an argon atmosphere and then water quenching. Nanotube formation on the Ti-35Nb-xHf alloys was achieved by anodizing in H{sub 3}PO{sub 4} electrolytes containing 0.8 wt.% NaF at room temperature. Anodization was carried out using an electrochemical method and all experiments were conducted at room temperature. Hydroxyapatite (HA) was deposited on the nanotubular Ti-35Nb-xHf alloys surface for the biomaterials by radio-frequency (RF) magnetron sputtering method. The morphologies of nanotubular and HA coated surface were characterized by X-ray diffractometer (XRD), optical microscopy (OM), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM). The wettability of HA coated surface was measured by contact angle goniometer. The microstructure of Ti-35Nb-xHf alloys was transformed needle-like to equiaxed structure with Hf content and {alpha} Double-Prime phase decreased, whereas {beta} phase increased as Hf content increased. HA coating surface was affected by microstructure of bulk and morphology of nanotube formation. In case of low Hf content, tip of nanotube formed at {beta} phase was coated with HA film, whereas {alpha} Double-Prime phase was not coated with HA film. In case of high Hf content, nanotube surface was coated uniformly with HA film. The wettability of HA coated nanotubular surface was higher than that of non coated samples.

  5. Cumulate Fragments in Silicic Ignimbrites

    Science.gov (United States)

    Bachmann, O.; Ellis, B. S.; Wolff, J.

    2014-12-01

    Increasingly, studies are concluding that silicic ignimbrites are the result of the amalgamation of multiple discrete magma batches. Yet the existence of discrete batches presents a conundrum for magma generation and storage; if silicic magma batches are not generated nearly in situ in the upper crust, they must traverse, and reside within, a thermally hostile environment with large temperature gradients, resulting in low survivability in their shallow magmatic hearths. The Snake River Plain (Idaho, USA) is a type example of this 'multi-batch' assembly with ignimbrites containing multiple populations of pyroxene crystals, glass shards, and crystal aggregates. The ubiquitous crystal aggregates hint at a mechanism to facilitate the existence of multiple, relatively small batches of rhyolite in the upper crust. These aggregates contain the same plagioclase, pyroxene, and oxide mineral compositions as single phenocrysts of the same minerals in their host rocks, but they have significantly less silicic bulk compositions and lack quartz and sanidine, which occur as single phenocrysts in the deposits. This implies significant crystallization followed by melt extraction from mushy reservoir margins. The extracted melt then continues to evolve (crystallizing sanidine and quartz) while the melt-depleted margins provide an increasingly rigid and refractory network segregating the crystal-poor batches of magma. The hot, refractory, margins insulate the crystal-poor lenses, allowing (1) extended residence in the upper crust, and (2) preservation of chemical heterogeneities among batches. In contrast, systems that produce cumulates richer in low-temperature phases (quartz, K-feldspars, and/or biotite) favour remelting upon recharge, leading to less segregation of eruptible melt pockets and the formation of gradationally zoned ignimbrites. The occurrence of similar crystal aggregates from a variety of magmatic lineages suggests the generality of this process.

  6. Elucidating the magmatic history of the Austurhorn silicic intrusive complex (southeast Iceland) using zircon elemental and isotopic geochemistry and geochronology

    Science.gov (United States)

    Padilla, A. J.; Miller, C. F.; Carley, T. L.; Economos, R. C.; Schmitt, A. K.; Coble, M. A.; Wooden, J. L.; Fisher, C. M.; Vervoort, J. D.; Hanchar, J. M.

    2016-09-01

    The Austurhorn intrusive complex (AIC) in southeast Iceland comprises large bodies of granophyre and gabbro, and a mafic-silicic composite zone (MSCZ) that exemplifies magmatic interactions common in Icelandic silicic systems. Despite being one of Iceland's best-studied intrusions, few studies have included detailed analyses of zircon, a mineral widely recognized as a valuable tracer of the history and evolution of its parental magma(s). In this study, we employ high spatial resolution zircon elemental and isotopic geochemistry and U-Pb geochronology as tools for elucidating the complex construction and magmatic evolution of Austurhorn's MSCZ. The trace element compositions of AIC zircon crystals form a broad but coherent array that partly overlaps with the geochemical signature for zircons from Icelandic silicic volcanic rocks. Typical of Icelandic zircons, Hf concentrations are relatively low (mush-like material and a prolonged lifetime for the complex.

  7. 182Hf- 182W chronometry and early differentiation of the ureilite parent body

    Science.gov (United States)

    Lee, Der-Chuen; Halliday, Alex N.; Singletary, Steven J.; Grove, Timothy L.

    2009-11-01

    Eight samples spanning the bulk chemical range of monomict ureilites, have been analyzed for their W isotopic composition and Hf/W in order to elucidate the differentiation history of the ureilite parent body. The ureilites studied here show sub-chondritic Hf and W concentrations and low Hf/W ratio, and all show clear 182W deficits relative to bulk chondrites. The W isotope data provide evidence that the ureilite parent body differentiated within 1 to 2 million years after the start of the solar system. Such early accretion and differentiation is comparable to the parent bodies of various magmatic iron meteorites, as well as the HED parent body. However, the trace element fractionations and by inference melting processes are very different. An early smelting/partial melting event coupled with metal-silicate segregation, however, can reproduce the observed Hf-W data in ureilites, and is consistent with petrological and other chemical evidence for a missing basaltic component and with primitive oxygen and noble gases compositions.

  8. Zircon from historic eruptions in Iceland: Reconstructing storage and evolution of silicic magmas

    Science.gov (United States)

    Carley, T.L.; Miller, C.F.; Wooden, J.L.; Bindeman, I.N.; Barth, A.P.

    2011-01-01

    Zoning patterns, U-Th disequilibria ages, and elemental compositions of zircon from eruptions of Askja (1875 AD), Hekla (1158 AD), ??r??faj??kull (1362 AD) and Torfaj??kull (1477 AD, 871 AD, 3100 BP, 7500 BP) provide insights into the complex, extended, histories of silicic magmatic systems in Iceland. Zircon compositions, which are correlated with proximity to the main axial rift, are distinct from those of mid-ocean ridge environments and fall at the low-Hf edge of the range of continental zircon. Morphology, zoning patterns, compositions, and U-Th ages all indicate growth and storage in subvolcanic silicic mushes or recently solidified rock at temperatures above the solidus but lower than that of the erupting magma. The eruptive products were likely ascending magmas that entrained a zircon "cargo" that formed thousands to tens of thousands of years prior to the eruptions. ?? 2011 Springer-Verlag.

  9. Atomic layer deposition of HfO{sub 2}: Growth initiation study on metallic underlayers

    Energy Technology Data Exchange (ETDEWEB)

    Platt, Christopher L., E-mail: Christopher.L.Platt@seagate.co [Seagate Technology, 47010 Kato Rd, Fremont, CA 94538 (United States); Li Ning; Li Kejing; Klein, Tonya M. [Department of Chemical and Biological Engineering, University of Alabama, A131 Bevill Building, Tuscaloosa, AL 35487-0203 (United States)

    2010-05-31

    The initial stages of HfO{sub 2} film growth by atomic layer deposition (ALD) on Co, Ta, and Pt thin films have been compared by x-ray photoelectron spectroscopy (XPS) and attenuated total reflection Fourier transform infrared spectroscopy. The initial tetrakis-dimethylamido(IV) hafnium (TDMAH) adsorption rate was highest on Co and increased with substrate temperature between 150 {sup o}C and 250 {sup o}C. The initial adsorption rate of TDMAH on Ta was less than on Co or Pt at the same substrate temperatures. The Ta surface also proved to be more stable with regard to TDMAH decomposition as fluctuations of adsorbed Hf and decomposition products were not observed during ALD cycling. Larger amounts of carbon were observed on Pt after TDMAH exposure compared to Co or Ta, suggestive of decomposition products. The XPS Hf(4f) peak measured after initial exposure of TDMAH on Pt showed evidence of two Hf oxidation states at the surface. It is postulated that the reaction of TDMAH and decomposition by-products with available oxygen or hydroxyl molecules at the surface of the various metal underlayers affected the initial growth of HfO{sub 2}.

  10. Unusual coordination numbers in silicate and aluminate glasses

    Energy Technology Data Exchange (ETDEWEB)

    McMillan, P.F. [Arizona State Univ., Tempe, AZ (United States); Stebbins, J.F. [Stanford Univ., Palo Alto, CA (United States)

    1993-12-31

    Silicon and aluminum are the principal network-forming cations in silicate and aluminosilicate glasses. In most models of glass structure, these are presumed to be in tetrahedral coordination, except for highly aluminous compositions, where VI-coordinated Al is expected. Al{sup VI} and Si{sup VI} species have also been suggested to be formed at high pressure. Recent work has yielded some interesting results regarding the Al and Si coordination chemistry in glasses. In amorphous Al{sub 2}O{sub 3} films prepared by electrochemical deposition, not only Al{sup IV} and Al{sup VI}, but also Al{sup V} species have been recognized. These species have also been observed in glasses and amorphous phases prepared along the SiO{sub 2}-Al{sub 2}O{sub 3} join. The concentration of the five coordinated Al species is highly dependent on composition and glass preparation conditions. Al{sup V} and Al{sup VI} species have also recently been described along the SiO{sub 2}-MgAl{sub 2}O{sub 4} join, where it was previously supposed that all Al was tetrahedral. The behavior of silicon is even more {open_quotes}surprising{close_quotes}. In experiments on alkali silicate glasses quenched from high pressures, the authors found evidence for Si in VI-fold coordination, as expected from high pressure silicate crystal structures, and also for Si{sup V}, a new species in silicate chemistry. The relative abundances of these species are a function of quench pressure and silica content. The Si{sup V} species has also been observed in trace amounts in room pressure glasses, and the authors have investigated its concentration as a function of alkali cation.

  11. Nanoscale zinc silicate from phytoliths

    Science.gov (United States)

    Qadri, S. B.; Gorzkowski, E. P.; Rath, B. B.; Feng, C. R.; Amarasinghe, R.; Freitas, J. A.; Culbertson, J. C.; Wollmershauser, J. A.

    2017-10-01

    We report a faster, less expensive method of producing zinc silicate nanoparticles. Such particles are used in high volume to make phosphors and anti-corrosion coatings. The approach makes use of phytoliths (plant rocks), which are microscopic, amorphous, and largely silicate particles embedded in plants, that lend themselves to being easily broken down into nanoparticles. Nanoparticles of Zn2SiO4 were produced in a two stage process. In the refinement stage, plant residue, mixed with an appropriate amount of ZnO, was heated in an argon atmosphere to a temperature exceeding 1400 °C for four to six hours and then heated in air at 650 °C to remove excess carbon. TEM shows 50-100 nm nanoparticles. Raman scattering indicates that only the -Zn2SiO4 crystalline phase was present. X-ray analysis indicated pure rhombohedral R 3 bar phase results from using rice/wheat husks. Both samples luminesced predominantly at 523 nm when illuminated with X-rays or UV laser light.

  12. Silicate condensation in Mira variables

    CERN Document Server

    Gail, Hans-Peter; Pucci, Annemarie

    2016-01-01

    We study whether the condensation of silicate dust in Mira envelopes could be caused by cluster formation by the abundant SiO molecules. For a simplified model of the pulsational motions of matter in the the outer layers of a Mira variable which is guided by a numerical model for Mira pulsations, the equations of dust nucleation and growth are solved in the co-moving frame of a fixed mass element. It is assumed that seed particles form by clustering of SiO molecules. The calculation of the nucleation rate is based on the experimental data of Nuth and Donn (1982). The quantity of dust formed is calculated by a moment method and the calculation of radiation pressure on the dusty gas is based on a dirty silicate model. Dust nucleation occurs in the model at the upper culmination of the trajectory of a gas parcel where it stays for a considerable time at low temperatures while subsequent dust growth occurs during the descending part of the motion and continues after the next shock reversed motion. It is found tha...

  13. OPTIMAL METHOD FOR PREPARATION OF SILICATE ROCK SAMPLES FOR ANALYTICAL PURPOSES

    Directory of Open Access Journals (Sweden)

    Maja Vrkljan

    2004-12-01

    Full Text Available The purpose of this study was to determine an optimal dissolution method for silicate rock samples for further analytical purposes. Analytical FAAS method of determining cobalt, chromium, copper, nickel, lead and zinc content in gabbro sample and geochemical standard AGV-1 has been applied for verification. Dissolution in mixtures of various inorganic acids has been tested, as well as Na2CO3 fusion technique. The results obtained by different methods have been compared and dissolution in the mixture of HNO3 + HF has been recommended as optimal.

  14. Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement

    Directory of Open Access Journals (Sweden)

    Qigang Zhou

    2013-03-01

    Full Text Available The refractory transition metal nitride (TMN film Hafnium nitride (HfNx was successfully prepared on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM cells in Pt (top/metal oxide/ HfNx (bottom sandwich structure. The reproducible resistive switching (RS characteristics of the memory cells were studied systematically for RRAM applications. The advantages of adopting HfNx instead of Pt as bottom electrode material were demonstrated, including the improvement of the low resistive state value, the RS endurance and the uniformity of RS parameters. The composition and chemical bonding states of the prepared HfNx was analyzed by X-ray photoelectron spectroscopy (XPS technique. The nitrogen content in the HfNx and the Gibbs free energy of the corresponding metal oxide formation has great influences on the RS properties. The oxygen reservoir ability and diffusion barrier effect of the HfNx play a key role in the RS performance improvement of the RRAM devices.

  15. HF radiation emitted by chaotic leader processes

    Science.gov (United States)

    Mäkelä, J. S.; Edirisinghe, M.; Fernando, M.; Montaño, R.; Cooray, V.

    2007-04-01

    This paper presents direct measurements of narrowband 10 MHz HF radiation from so-called “chaotic leaders” associated with subsequent return strokes. Although the term is controversial and poorly defined, we find that more than 30% of subsequent strokes in close lightning flashes contain electric field characteristics that are best described as “chaotic”. In earlier studies, return strokes have consistently been observed to be the strongest sources of HF radiation, but the results for leader processes are less consistent. We also observe return strokes to be the main HF emitter, and the leaders before the first return stroke in a flash sequence also emit HF though somewhat less intensely. The leaders preceding subsequent strokes typically emit little or no HF radiation, whether they are dart or dart-stepped leaders. However, it was observed that the presence of a chaotic component increases the leader HF intensity dramatically Defining the HF intensity unequivocally can be problematic for processes like chaotic leaders which have a combination of continuous and impulsive phenomena. Two time-domain methods were used to measure the HF intensity, the peak energy and the RMS energy. In the frequency domain these correspond to the energy spectral density (ESD) and power spectral density (PSD), respectively. It was found that the methods are not necessarily compatible. Thus, it is suggested that to clarify future work, leader processes should be characterized by the PSD rather than the ESD.

  16. HfS, Hyperfine Structure Fitting Tool

    CERN Document Server

    Estalella, Robert

    2016-01-01

    HfS is a tool to fit the hyperfine structure of spectral lines, with multiple velocity components. The HfS_nh3 procedures included in HfS fit simultaneously the hyperfine structure of the NH$_3$ (J,K)= (1,1) and (2,2) transitions, and perform a standard analysis to derive $T_\\mathrm{ex}$, NH$_3$ column density, $T_\\mathrm{rot}$, and $T_\\mathrm{k}$. HfS uses a Monte Carlo approach for fitting the line parameters. Especial attention is paid to the derivation of the parameter uncertainties. HfS includes procedures that make use of parallel computing for fitting spectra from a data cube.

  17. Silicates materials of high vacuum technology

    CERN Document Server

    Espe, Werner

    2013-01-01

    Materials of High Vacuum Technology, Volume 2: Silicates covers silicate insulators of special importance to vacuum technology. The book discusses the manufacture, composition, and physical and chemical properties of technical glasses, quartz glass, quartzware, vycor glass, ceramic materials, mica, and asbestos.

  18. Structural and electrical properties of metal ferroelectric insulator semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer

    Science.gov (United States)

    Roy, A.; Dhar, A.; Bhattacharya, D.; Ray, S. K.

    2008-05-01

    Ferroelectric SrBi2Ta2O9 (SBT) thin films have been deposited by the radio-frequency magnetron sputtering technique on bare p-Si as well as on HfO2 insulating buffer p-Si. XRD patterns revealed the formation of a well-crystallized SBT perovskite thin film on the HfO2 buffer layer. The electrical properties of the metal-ferroelectric-insulator-semiconductor (MFIS) structure were characterized by varying thicknesses of the HfO2 layer. The MFIS structure exhibits a maximum clockwise C-V memory window of 1.60 V when the thickness of the HfO2 layer was 12 nm with a lower leakage current density of 6.20 × 10-7 A cm-2 at a positive applied voltage of 7 V. However, the memory window reaches a maximum value of 0.7 V at a bias voltage of ±5 and then decreases due to charge injection in the case of the insulating buffer layer thickness of 3 nm. The density of oxide trapped charges at/near the buffer layer-ferroelectric interface is studied by the voltage stress method. Capacitance-voltage (C-V) and leakage current density (J-V) characteristics of the Al/SBT/HfO2/Si(1 0 0) capacitor indicate that the introduction of the HfO2 buffer layer prevents interfacial diffusion between the SBT thin film and the Si substrate effectively and improves the interface quality. Furthermore, the Al/SBT/HfO2/Si structures exhibit excellent retention characteristics, the high and low capacitance values clearly distinguishable for over 1 h and 30 min. This shows that the proposed Al/SrBi2Ta2O9/HfO2/Si structure is ideally suitable for high performance ferroelectric memories.

  19. Aspects of HF radio propagation

    Directory of Open Access Journals (Sweden)

    Stephane Saillant

    2009-06-01

    Full Text Available

    radio systems. From the point of view Working Group 2 of the COST 296 Action, interest lies with effects associated

    with propagation via the ionosphere of signals within the HF band. Several aspects are covered in this paper:

    a The directions of arrival and times of flight of signals received over a path oriented along the trough have

    been examined and several types of propagation effects identified. Of particular note, combining the HF observations

    with satellite measurements has identified the presence of irregularities within the floor of the trough that

    result in propagation displaced from the great circle direction. An understanding of the propagation effects that

    result in deviations of the signal path from the great circle direction are of particular relevance to the operation

    of HF radiolocation systems.

    b Inclusion of the results from the above mentioned measurements into a propagation model of the northerly

    ionosphere (i.e. those regions of the ionosphere located poleward of, and including, the mid-latitude trough

    and the use of this model to predict the coverage expected from transmitters where the signals impinge on the

    northerly ionosphere

  20. Laminated Al{sub 2}O{sub 3}–HfO{sub 2} layers grown by atomic layer deposition for microelectronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Lo Nigro, Raffaella, E-mail: raffaella.lonigro@imm.cnr.it [Istituto per la Microelettronica e Microsistemi, IMM-CNR, Strada VIII 5, 95121 Catania (Italy); Schilirò, Emanuela [Istituto per la Microelettronica e Microsistemi, IMM-CNR, Strada VIII 5, 95121 Catania (Italy); Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, Viale A. Doria 6, 95125 Catania (Italy); Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio [Istituto per la Microelettronica e Microsistemi, IMM-CNR, Strada VIII 5, 95121 Catania (Italy)

    2016-02-29

    Nanolaminated Al{sub 2}O{sub 3}–HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer thin films have been grown by plasma enhanced atomic layer deposition on silicon substrates. The nanolaminated system consists of alternating layers of Al{sub 2}O{sub 3} and HfO{sub 2}, while the bilayer system by contrast has been fabricated as a HfO{sub 2} about 15 nm thick film deposited on a Al{sub 2}O{sub 3} 15 nm thick film directly grown in contact with the silicon substrate. Both systems have been grown at a low temperature of 300 °C and both systems possess 30 nm total thickness. The dielectric properties and the structural evolution upon annealing treatment at 800 °C of the nanolaminated system have been compared to those of the bilayer. The collected data pointed out to promising properties of the fabricated nanolaminated films. - Highlights: • Nanolaminated Al{sub 2}O{sub 3}–HfO{sub 2} films were grown by Plasma Enhanced-ALD on Si(100). • Properties of nanolaminated and bilayer Al{sub 2}O{sub 3}/HfO{sub 2} were compared. • Nanolaminated samples possess higher thermal stability.

  1. Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Science.gov (United States)

    Esakky, Papanasam; Kailath, Binsu J.

    2017-08-01

    HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

  2. CeO2掺杂对HfO2栅介质电学特性的影响%Influence of CeO2-Doping on Electrical Properties of HfO2 Gate Dielectrics

    Institute of Scientific and Technical Information of China (English)

    杨萌萌; 屠海令; 张心强; 熊玉华; 王小娜; 杜军

    2012-01-01

    采用磁控共溅射的方法在p-Si(100)衬底上沉积了掺杂和不掺杂CeO2的HfO2薄膜.通过X射线光电子能谱(XPS)研究了薄膜中元素的化学计量比及结合能,制备MOS结构并对漏电流及电容等电学性能进行表征.结果表明,掺入CeO2后,整个体系的氧空位生成能增大,氧空位数目减少,漏电流较纯HfO2下降了一个数量级,满足作为高k材料的要求.%CeO2-doped HfO2(CDH) thin films were deposited on p-Si substrates by RF magnetron co-sputtering. The film thickness was measured by surface profiler. The binding energy of elements was characterized by X-ray photoelectron spectroscopy ( XPS). MOS structures were made to characterize the leakage current and capacitance. XPS analysis of Hf 4f and 01s confirmed that the Hf-0 binding energy increased after doping CeO2. This resulted in the increase of the oxygen vacancy formation energy and the reduction of the concentration of oxygen vacancy. The leakage current density of CDH film was about one order of magnitude lower than that of HfO2 film. CDH film can meet the requirements of high-fc application.

  3. Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

    Energy Technology Data Exchange (ETDEWEB)

    Cerbu, F.; Madia, O.; Afanas' ev, V. V.; Houssa, M.; Stesmans, A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Andreev, D. V. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Bauman Moscow State Technical University—Kaluga Branch, 248000 Kaluga, Moscow obl. (Russian Federation); Fadida, S.; Eizenberg, M. [Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa (Israel); Breuil, L. [imec, 3001 Leuven (Belgium); Lisoni, J. G. [imec, 3001 Leuven (Belgium); Institute of Physics and Mathematics, Faculty of Science, Universidad Austral de Chile, Valdivia (Chile); Kittl, J. A. [Laboratory of Semiconductor Physics, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium); Advanced Logic Lab, Samsung Semiconductor, Inc., Austin, 78754 Texas (United States); Strand, J.; Shluger, A. L. [Department of Physics and Astronomy, University College London, London WC1E 6BT (United Kingdom)

    2016-05-30

    Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behavior of HfO{sub 2}, suggesting that alternative defect models should be considered.

  4. Characterization of gadolinium and lanthanum oxide films on Si (100)

    Science.gov (United States)

    Wu, X.; Landheer, D.; Sproule, G. I.; Quance, T.; Graham, M. J.; Botton, G. A.

    2002-05-01

    High-resolution transmission electron microscopy, electron energy loss spectroscopy, and Auger electron spectroscopy, were used to study gadolinium and lanthanum oxide films deposited on Si (100) substrates using electron-beam evaporation from pressed-powder targets. As-deposited films consist of a crystalline oxide layer and an amorphous interfacial layer. A complicated distinct multilayer structure consisting of oxide layers, silicate layers, and SiO2-rich layers in thick (~30 nm) annealed films has been observed for both gadolinium and lanthanum films. For thinner annealed films (~8 nm), there is no longer a crystalline oxide layer but an amorphous gadolinium or lanthanum silicate layer and an interfacial SiO2-rich layer. The formation of the lanthanum silicate by annealing lanthanum oxide is found to be thermodynamically more favorable than the formation of gadolinium silicate.

  5. HF Transverse Segmentation and Tagging Jet Capability

    CERN Document Server

    Doroshkevich, E A; Kuleshov, Sergey

    1998-01-01

    So called tagging jets and pile-up were simulated for the optimisation of the HF segmentation. The energy resolution, angular resolution and efficiency of jet reconstruction are defined for different calorimeter segmentation.

  6. Collisional quenching of highly rotationally excited HF

    CERN Document Server

    Yang, Benhui; Forrey, R C; Stancil, P C; Balakrishnan, N

    2015-01-01

    Collisional excitation rate coefficients play an important role in the dynamics of energy transfer in the interstellar medium. In particular, accurate rotational excitation rates are needed to interpret microwave and infrared observations of the interstellar gas for nonlocal thermodynamic equilibrium line formation. Theoretical cross sections and rate coefficients for collisional deexcitation of rotationally excited HF in the vibrational ground state are reported. The quantum-mechanical close-coupling approach implemented in the nonreactive scattering code MOLSCAT was applied in the cross section and rate coefficient calculations on an accurate 2D HF-He potential energy surface. Estimates of rate coefficients for H and H$_2$ colliders were obtained from the HF-He collisional data with a reduced-potential scaling approach. The calculation of state-to-state rotational quenching cross sections for HF due to He with initial rotational levels up to $j=20$ were performed for kinetic energies from 10$^{-5}$ to 15000...

  7. Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

    Energy Technology Data Exchange (ETDEWEB)

    Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

    2014-08-15

    The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

  8. Promise and Pitfalls of Lu/Hf-Sm/Nd Garnet Geochronology

    Science.gov (United States)

    King, R. L.; Vervoort, J. D.; Kohn, M. J.; Zirakparvar, N. A.; Hart, G. L.; Corrie, S. L.; Cheng, H.

    2007-12-01

    Our ability to routinely measure Lu-Hf and Sm-Nd isotopes in garnet allows broad new applications in geochronology, petrology, and tectonics. However, applications of these data can be limited by challenges in interpreting the petrologic record and preparing garnets for analysis. Here, we examine petrologic and chemical pitfalls encountered in garnet geochronology. Petrologic factors influencing trace element compositions in garnet include reactions that modify REE availability and partitioning (1,2), kinetically limited transfer of REEs to garnet (3), and bulk compositional heterogeneities (4). Interpreting the effects of these processes on Sm/Nd and Lu/Hf ages requires characterizing REE zonation prior to isotope analysis and age interpretation. Because garnet fractions are traditionally picked from crushed samples without regard to intracrystalline origins or chemistries, isochrons will represent mixtures derived to varying degrees from all periods of garnet growth. While measured zoning might generally indicate what garnet portion dominates the Lu/Hf or Sm/Nd budget, traditional mineral separation will rarely realize the chronologic potential afforded by high precision Hf and Nd isotope measurements. The potential use of alternative techniques, such as microsampling, necessitates selective digestion and/or leaching to eliminate inclusions within garnet. For Sm/Nd geochronology, H2SO4 leaching removes LREE-rich phosphates (e.g. apatite), but not silicates (e.g. epidote), precluding Sm-Nd dating of some rocks. For Lu/Hf geochronology, ubiquitous zircon microinclusions (c. 1 μm) can significantly disrupt age determinations. Microinclusions cannot be detected optically or separated physically, requiring selective chemical digestion. If complete digestion methods, such as bomb digestion, are used for garnet fractions, then "common Hf" from zircon will be contained in final solutions. These mixed analyses are of dubious utility and will fall into one of two

  9. Experimental Investigation of Irradiation-driven Hydrogen Isotope Fractionation in Analogs of Protoplanetary Hydrous Silicate Dust

    Science.gov (United States)

    Roskosz, Mathieu; Laurent, Boris; Leroux, Hugues; Remusat, Laurent

    2016-11-01

    The origin of hydrogen in chondritic components is poorly understood. Their isotopic composition is heavier than the solar nebula gas. In addition, in most meteorites, hydrous silicates are found to be lighter than the coexisting organic matter. Ionizing irradiation recently emerged as an efficient hydrogen fractionating process in organics, but its effect on H-bearing silicates remains essentially unknown. We report the evolution of the D/H of hydrous silicates experimentally irradiated by electrons. Thin films of amorphous silica, amorphous “serpentine,” and pellets of crystalline muscovite were irradiated at 4 and 30 keV. For all samples, irradiation leads to a large hydrogen loss correlated with a moderate deuterium enrichment of the solid residue. The entire data set can be described by a Rayleigh distillation. The calculated fractionation factor is consistent with a kinetically controlled fractionation during the loss of hydrogen. Furthermore, for a given ionizing condition, the deuteration of the silicate residues is much lower than the deuteration measured on irradiated organic macromolecules. These results provide firm evidence of the limitations of ionizing irradiation as a driving mechanism for D-enrichment of silicate materials. The isotopic composition of the silicate dust cannot rise from a protosolar to a chondritic signature during solar irradiations. More importantly, these results imply that irradiation of the disk naturally induces a strong decoupling of the isotopic signatures of coexisting organics and silicates. This decoupling is consistent with the systematic difference observed between the heavy organic matter and the lighter water typically associated with minerals in the matrix of most carbonaceous chondrites.

  10. Post-Cleaning Effect on a HfO2 Gate Stack Using a NF3/NH3 Plasma.

    Science.gov (United States)

    Lee, Min-Seon; Oh, Hoon-Jung; Lee, Joo-Hee; Lee, In-Geun; Shin, Woo-Gon; Kim, Kyu-Dong; Park, Jin-Gu; Ko, Dae-Hong

    2016-05-01

    The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics.

  11. High-frequency magnetoelastic measurements on Fe-Co-Hf-N/Ti-N multilayer coatings

    Science.gov (United States)

    Krüger, Kathrin; Seemann, Klaus; Leiste, Harald; Stüber, Michael; Ulrich, Sven

    2013-10-01

    Fe32Co44Hf12N12/Ti50N50 thin multilayer coatings are realized as wear resistant coatings with an integrated sensor function, in order to detect e.g. external mechanical stress. A setup was designed to monitor changes in the frequency-dependent permeability due to the mechanically induced stress in the ferromagnetic Fe32Co44Hf12N12 single layers. The change of the ferromagnetic cut-off frequency is described by an effective in-plane anisotropy field H→u,eff which accounts for a thermally induced uniaxial anisotropy field H→u and an effective biaxial magnetoelastic anisotropy field H→me. Fe32Co44Hf12N12/Ti50N50 multilayer films with seven bilayers and a total thickness of about 1 μm were grown by a sequential deposition of Fe32Co44Hf12N12 and Ti50N50 individual layers by means of reactive DC and RF magnetron sputtering, respectively. Additionally, a Fe32Co44Hf12N12 monolayer coating with a thickness of about 500 nm was deposited in order to determine the magnetic properties of the single layer. The films were investigated with respect to their static and dynamic ferromagnetic properties. A uniaxial anisotropy field of 5 mT could be induced after annealing the multilayer films for 1 h at 400 °C in vacuum in a static magnetic field of 50 mT. Additionally, magnetic softness (μ0Hc=0.6 mT) and cut-off frequencies above 2 GHz were observed. Inducing compressive stress increases the cut-off frequency of the Fe32Co44Hf12N12 single layer as well as of the Fe32Co44Hf12N12/Ti50N50 multilayer films whereas tensile stress causes a decrease in the cut-off frequency. Accordingly, the dependence of the cut-off frequency on external mechanical stress is theoretically described. Furthermore, the possibility of detecting mechanically induced stress in a ferromagnetic layer was demonstrated by the shift of the cut-off frequency with a resolution of 1.0 MPa.

  12. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  13. Spectroscopic analysis of Al and N diffusion in HfO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Lysaght, P. S.; Price, J.; Kirsch, P. D. [SEMATECH, 257 Fuller Rd, Albany, New York 12203 (United States); Woicik, J. C.; Weiland, C. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Sahiner, M. A. [Seton Hall University, 400 South Orange Ave, South Orange, New Jersey 07079 (United States)

    2012-09-15

    X-ray photoelectron core level spectroscopy, secondary ion mass spectroscopy, spectroscopic ellipsometry, and extended x-ray absorption fine structure measurements have been employed to distinguish the effects of Al and N diffusion on the local bonding and microstructure of HfO{sub 2} and its interface with the Si substrate in (001)Si/SiO{sub x}/2 nm HfO{sub 2}/1 nm AlO{sub x} film structures. The diffusion of Al from the thin AlO{sub x} cap layer deposited on both annealed and unannealed HfO{sub 2} has been observed following anneal in N{sub 2} and NH{sub 3} ambient. Both N{sub 2} and NH{sub 3} subsequent anneals were performed to decouple incorporated nitrogen from thermal reactions alone. Causal variations in the HfO{sub 2} microstructure combined with the dependence of Al and N diffusion on initial HfO{sub 2} conditions are presented with respect to anneal temperature and ambient.

  14. Carbon Monoxide Silicate Reduction System Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The Carbon Monoxide Silicate Reduction System (COSRS) is a novel technology for producing large quantities of oxygen on the Moon. Oxygen yields of 15 kilograms per...

  15. Carbon Monoxide Silicate Reduction System Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The Carbon Monoxide Silicate Reduction System (COSRS) is an innovative method that for the first time uses the strong reductant carbon monoxide to both reduce iron...

  16. Characterization of silicate/Si(001) interfaces

    Science.gov (United States)

    Copel, M.; Cartier, E.; Narayanan, V.; Reuter, M. C.; Guha, S.; Bojarczuk, N.

    2002-11-01

    Many of the proposed high permittivity gate dielectrics for silicon-based microelectronics rely on a stack configuration, with an SiO2 buffer layer to provide an interface. We describe a means for creating gate dielectrics with a direct yttrium silicate-silicon interface through the solid-state reaction of yttria and silicon oxynitride, avoiding the preparation of an oxide-free silicon surface. Characterization by medium-energy ion scattering indicates complete consumption of the underlying oxide through silicate formation during high-temperature annealing. Furthermore, the silicate dielectric exhibits small flat-band voltage shifts, indicating low quantities of charge, without passivation steps. Creation of a silicate-silicon interfaces by a simple route may enable the study of an alternate class of dielectrics.

  17. Conformal growth of low friction HfB{sub x}C{sub y} hard coatings

    Energy Technology Data Exchange (ETDEWEB)

    Mohimi, E. [Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801 (United States); Ozkan, T. [Department of Mechanical Science and Engineering, University of Illinois, Urbana, IL, 61801 (United States); Babar, S. [Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801 (United States); Polycarpou, A.A. [Department of Mechanical Science and Engineering, University of Illinois, Urbana, IL, 61801 (United States); Abelson, J.R., E-mail: abelson@illinois.edu [Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801 (United States)

    2015-10-01

    Thin films of HfB{sub x}C{sub y} are deposited in a cold wall CVD apparatus using Hf(BH{sub 4}){sub 4} precursor and 3,3-dimethyl-1-butene, (CH{sub 3}){sub 3}CCH=CH{sub 2}, as a controllable source of carbon, at substrate temperatures of 250–600 °C. As-deposited films grown at 250 °C are highly conformal (e.g., in a very deep trench, the step coverage is above 90% at a depth/width of 30:1), exhibit dense microstructure, and appear amorphous in X-ray diffraction. Increasing the carbon content from 5 to 21 at.% decreases the hardness from 21 to 9 GPa and the reduced modulus from 207 to 114 GPa. Films grown at 600 °C with carbon contents of 28 and 35 at.% exhibit enhanced hardness of 25 and 23 GPa, and reduced modulus of 211 and 202 GPa, respectively. Annealing the 300 °C grown films at 700 °C affords a nanocrystalline structure with improved mechanical properties. For films with the highest and lowest carbon contents, respectively: the coefficient of sliding friction is in the range of 0.05–0.08 and the H/E and H{sup 3}/E{sup 2} ratios range from 0.08–0.11 and 0.15–0.40. These values indicate that C-containing films should exhibit improved wear performance in tribological applications. - Highlights: • CVD of highly conformal hard coatings of hafnium borocarbide, HfB{sub x}C{sub y}. • Deposition temperature as low at 250 °C using non-halogenated precursor and olefinic carbon source • Films have low coefficient of unlubricated sliding friction and high wear resistance. • Mechanical properties reported across the compositional range 5–35 at.% carbon.

  18. III-Nitride grating grown on freestanding HfO2 gratings

    Directory of Open Access Journals (Sweden)

    Wu Tong

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of III-nitride material on freestanding HfO2 gratings by molecular beam epitaxy. Freestanding HfO2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO2 film by a front-side silicon process. The 60-μm long HfO2 grating beam can sustain the stress change during the epitaxial growth of a III-nitride material. Grating structures locally change the growth condition and vary indium composition in the InGaN/GaN quantum wells and thus, the photoluminescence spectra of epitaxial III-nitride grating are tuned. Guided mode resonances are experimentally demonstrated in fabricated III-nitride gratings, opening the possibility to achieve the interaction between the excited light and the grating structure through guided mode resonance. PACS: 78.55.Cr; 81.65.Cf; 81.15.Hi.

  19. Intrinsic luminescence of alkali silicate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Arbuzov, V.I.; Grabovskis, V.Y.; Tolstoi, M.N.; Vitol, I.K.

    1986-09-01

    This study obtains additional information on L centers and their role in electron excitation and intrinsic luminescence of a whole series. (Li, Na, K, Rb, and Cs) of alkali silicate glasses. The authors compare the features of the interaction with radiation of specimens of glass and crystal of a similar chemical composition, since silicates of alkali metals can be obtained in both the glassy and crystalline states.

  20. Thermodynamics and Kinetics of Silicate Vaporization

    Science.gov (United States)

    Jacobson, Nathan S.; Costa, Gustavo C. C.

    2015-01-01

    Silicates are a common class of materials that are often exposed to high temperatures. The behavior of these materials needs to be understood for applications as high temperature coatings in material science as well as the constituents of lava for geological considerations. The vaporization behavior of these materials is an important aspect of their high temperature behavior and it also provides fundamental thermodynamic data. The application of Knudsen effusion mass spectrometry (KEMS) to silicates is discussed. There are several special considerations for silicates. The first is selection of an appropriate cell material, which is either nearly inert or has well-understood interactions with the silicate. The second consideration is proper measurement of the low vapor pressures. This can be circumvented by using a reducing agent to boost the vapor pressure without changing the solid composition or by working at very high temperatures. The third consideration deals with kinetic barriers to vaporization. The measurement of these barriers, as encompassed in a vaporization coefficient, is discussed. Current measured data of rare earth silicates for high temperature coating applications are discussed. In addition, data on magnesium-iron-silicates (olivine) are presented and discussed.

  1. Electrical study of Al/HfO2/p-Si (100) gate stack

    Science.gov (United States)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2016-05-01

    Low leakage current density and high relative permittivity (dielectric constant) are the key factors in order to replace the SiO2 from Si based technology towards its further down scaling. HfO2 thin films received significant attention due to its excellent optoelectronic properties. In this work, ultra - thin (17 nm) HfO2 films on Si substrate are fabricated by RF sputtering. As deposited films are amorphous in nature and in order to get the reasonable high dielectric constant the films are annealed (700°C, 30 min) in nitrogen environment. A high refractive index (2.08) and small grain size (~10) nm was extracted from ellipsometry and XRD, respectively. The AFM study revealed a small RMS surface roughness 9 Å. Towards electrical exploration, the films are integrated in Metal - Insulator - Semiconductor (MIS) capacitors structure. The oxide capacitance (Cox), flat band capacitance (CFB), flat band voltage (VFB), and oxide trapped charges (Qot) calculated from high frequency (1 MHz) C-V curve are 490 pF, 183 pF, 1.33 V and 1.61x10-10 C, respectively. The dielectric constant calculated from accumulation capacitance is 17. The films show a very low leakage current density 4.3×10-8 A/cm2 at ±1 V.

  2. New CMOS compatible soft ferromagnetic materials with in-plane uniaxial anisotropy for h.f. micro-inductor applications

    Energy Technology Data Exchange (ETDEWEB)

    Bekker, V. [Institut fuer Materialforschung I, Forschungszentrum Karlsruhe, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Seemann, K. [Institut fuer Materialforschung I, Forschungszentrum Karlsruhe, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)]. E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Institut fuer Materialforschung I, Forschungszentrum Karlsruhe, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Ziebert, C. [Institut fuer Materialforschung I, Forschungszentrum Karlsruhe, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2005-04-15

    Thin ferromagnetic Fe-Co-Al-N films deposited by r.f. reactive magnetron sputtering were investigated with regard to the application as magnetic cores for h.f. micro-inductors. After deposition, the films were vacuum field annealed to induce a marked uniaxial anisotropy necessary for application in the gigahertz frequency range. Due to the nanocrystalline microstructure, the films exhibit good soft magnetic properties and an excellent thermal stability. The influence of the film thickness and domain structure on the high-frequency permeability and on the micro-inductor's performance were analysed.

  3. Silicic ash beds bracket Emeishan Large Igneous province to < 1 m.y. at ~ 260 Ma

    Science.gov (United States)

    Huang, Hu; Cawood, Peter A.; Hou, Ming-Cai; Yang, Jiang-Hai; Ni, Shi-Jun; Du, Yuan-Sheng; Yan, Zhao-Kun; Wang, Jun

    2016-11-01

    Claystone beds directly below and above the Emeishan basalts in SW China formed around the Guadalupian-Lopingian (G - L) boundary. Zircons from both levels give U-Pb ages of 260 Ma, and are identical within-error to ages reported for the Emeishan Large Igneous Province (LIP). The claystones lack Nb - Ta anomalies on primitive mantle normalized elemental diagrams; zircons from these claystones have a geochemical affinity to within-plate-type magmas. These features, combined with the strong negative Eu anomalies in the zircons and high Al2O3/TiO2 ratios, indicate that claystones around the G - L boundary have a silicic volcanic component related to Emeishan LIP. Zircons from the underlying claystone bed have much higher U/Yb and Th/Nb ratios and lower εHf(t) values than those overlying the LIP, suggesting that early-stage silicic volcanic rocks had a higher crustal contamination or assimilation during magmatic processes. In terms of stratigraphic correlation, our data demonstrate that silicic eruptions occurred not only at the end, but also at the beginning of the Emeishan LIP, and the overall duration of the main basaltic phase was short (< 1 m.y).

  4. Annealing effects on residual stress of HfO2/SiO2 multilayers

    Institute of Scientific and Technical Information of China (English)

    Yanming Shen; Zhaoxia Han; Jianda Shao; Shuying Shao; Hongbo He

    2008-01-01

    HfO2/SiO2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method.The effects of annealing at the temperature between 200 and 400℃ on residual stresses have been studied.It is found that the residual stress of as-deposited HfO2/SiO2 multilayers is compressive.It becomes tensile after annealing at 200℃,and then the value of tensile stress increases as annealing temperature increases.And cracks appear in the film because tensile stress is too large when the sample is annealed at 400℃.At the same time,the crystallite size increases and interplanar distance decreases with the increase of annealing temperature.The variation of residual stresses is corresponding with the evolution of structures.

  5. Influence of silicate anions structure on desilication in silicate-bearing sodium aluminate solution

    Institute of Scientific and Technical Information of China (English)

    刘桂华; 张闻; 齐天贵; 彭志宏; 周秋生; 李小斌

    2016-01-01

    The structural changes of silicate anions in the desilication process with the addition of calcium hydrate alumino-carbonate were studied by measuring Raman spectra, infrared spectra and corresponding second derivative spectra. The results show that the desilication ratio in the solution prepared by the addition of sodium silicate (solution-SS) is much greater than that in the solution by the addition of green liquor (solution-GL), and low alumina concentration in the sodium aluminate solutions facilitates the desilication process. It is also shown that alumino-silicate anions in the solution-GL, and Q3 polymeric silicate anions in solution-SS are predominant, respectively. In addition, increasing the concentration of silica favors respectively the formation of the alumino-silicate or the Q3 silicate anions in the solution-GL or the solution-SS. Therefore, it can be inferred that the low desilication ratio in the silicate-bearing aluminate solution is mainly attributed to the existence of alumino-silicate anions.

  6. High temperature (1000 °C) compatible Y-La-Si-O silicate gate dielectric in direct contact with Si with 7.7 A˚ equivalent oxide thickness

    Science.gov (United States)

    Dubourdieu, C.; Cartier, E.; Bruley, J.; Hopstaken, M.; Frank, M. M.; Narayanan, V.

    2011-06-01

    Yttrium lanthanum silicate was formed in direct contact with silicon after a rapid thermal annealing at 1000 °C in metal-oxide-semiconductor capacitors leading to an equivalent oxide thickness (EOT) of 7.7 Å. This represents one of the lowest EOT value reported for a gate-first process with non Hf-based dielectric. The silicate is formed by interdiffusion of La2O3 and YOx layers and interfacial SiO2 consumption. Yttrium incorporation reduces the leakage current density as well as the large negative flatband voltage (Vfb) shift that is associated with lanthanide-based dielectrics. The Vfb value can be appropriately tuned for n-type field-effect transistor operation by changing the silicate composition.

  7. Interaction of dispersed polyvynil acetate with silicate in finishing materials

    Directory of Open Access Journals (Sweden)

    Runova, R. F.

    1996-12-01

    Full Text Available This article focuses on the processes of interaction between calcium silicate hydrates and dispersed polyvinyl acetate in tight films with the aim of developing compounds meant for restoration and finishing works. The basis of this development relies on the concept concerning the determining role of the crystal-chemical factor of the silicate phase in the formation of organic-mineral compounds of increased durability. The characteristics of dispersed calcium silicate hydrates are portrayed. The preparation conditions, accounting for the synthesis of the product of submicrocrystalline structure, conforming with the stoichiometry CaO∙SiO2 =0.8-2.0 have been determined. The interaction has been studied for compounds achieved by mixing ingredients in a rapid whirling mixer, and subjected to hardening at T=20+2 T. With the aid of XRD, DTA and Infra-Red Spectrometry methods the formation process of the sophisticated polymer silicate phase in the material was observed for a period of 90 days. The properties of the film were investigated and its high resistance against the influence of external factors was established. On this basis a conclusion concerning the quite high effectiveness of substituting portland cement with dispersed calcium silicate hydrate in polymer cement compounds has been made. White colour and other various special properties determine the suitability for repair and finishing works on facades of buildings.

    Este artículo está orientado a estudiar los procesos de interacción entre los silicatos cálcicos hidratados y el acetato de polivinilo disperso en capas impermeables, con el objeto de desarrollar compuestos destinados para la restauración. El fundamento de estos estudios es determinar el papel que los factores cristaloquímicos de las fases silicato tienen en la formación de compuestos órganominerales de elevada durabilidad. Se han descrito las características de los silicatos cálcicos hidratados

  8. High performance organic nonvolatile memory transistors based on HfO2 and poly(α-methylstyrene) electret hybrid charge-trapping layers

    Science.gov (United States)

    Xu, W. C.; He, H. X.; Jing, X. S.; Wu, S. J.; Zhang, Z.; Gao, J. W.; Gao, X. S.; Zhou, G. F.; Lu, X. B.; Liu, J.-M.

    2017-08-01

    In this work, we fabricated a high performance flash-type organic nonvolatile memory transistor, which adopted polymer-electret poly(α-methylstyrene) (PαMS) and HfO2 films as hybrid charge trapping layer (CTL). Compared with a single HfO2 or PαMS CTL structure, the hybrid HfO2/PαMS CTL structure can provide enhanced charge trapping efficiency to increase the device operation speed and reduce the leakage current to boost the device reliability. The fabricated nonvolatile organic memory transistors with the hybrid CTL shows excellent electrical properties, including low operation voltage (8 V), high speed (memories.

  9. Partitioning of protactinium, uranium, thorium and other trace elements between columbite and hydrous silicate melt

    Science.gov (United States)

    Huang, F.; Schmidt, M. W.; Günther, D.; Eikenberg, J.

    2009-12-01

    U-series disequilibria are a unique powerful tool to constrain the time-scales and processes of magmatism in mid-ocean ridge, intra-plate, and convergent margin settings. 235U-231Pa is one of the important parent-daughter pairs (231Pa half life = 33 kyr) because protactinium is normally much more incompatible than U during magmatism and thus the ubiquitously observed 231Pa excess in young igneous rocks most likely reflects melting processes. However, because of the extreme incompatibility of protactinium in most silicate minerals (mineral/meltDPa determined at the permissible Pa doping level of 10 ppm (bulk). Experiments were run in a piston cylinder apparatus at 0.5 GPa and 1115 oC using Pt double capsules with NNO or FMQ as external fO2 buffers. The starting material is a hydrous per-aluminous granitic composition, doped with Pa solution in the Paul Scherrer Institute and also contains other trace elements including U, Th, REE, Zr, Hf, W, Mo, Ti, V, Ge, P, and Sn. Experiments employing an oscillating rather than constant temperature have produced columbite crystals up to 30 μm and large areas of crystal-free water-saturated silicate melts. Columbite/silicate melt partition coefficients of non-radioactive trace elements are presently measured by LA-ICP-MS, and Pa will be added as a next stage. The result will give the oxidation state of Pa at oxygen fugacities of the mantle and crust, and have important implications for the partitioning of Pa between silicate minerals and melt and on our understanding of 231Pa-235U disequilibrium in natural magmatic systems.

  10. General concepts of modern HF communications

    Science.gov (United States)

    Aarons, Jules

    Both conceptual and hardware advancements have led to substantial systems developments in military HF communications; the former encompass coding and error correction techniques for security, in order to minimize propagation and interference, while the latter prominently include digital equipment permitting the selection of a frequency for a particular path and propagation mode, as well as modulation selection. Propagation-related advancements involve better statistical models as well as advancements in short-term forecasting methods responsive to changes in solar-geophysical parameters. Adaptive HF systems have been developed for meteor-scatter radio communications.

  11. Research on Multi-Layer Distributed HF Radio Network Structure

    Institute of Scientific and Technical Information of China (English)

    Hui Dai; Chun-Jiang Wang; Quan Yu

    2008-01-01

    High frequency (HF) transmission is an important communication techniques. However, conventional point-to-point transmission can be easily destroyed, which limits its utilization in practice. HF networking communication has the capability against demolishment. The network structure is one of the key factors for HF networking communication. In this paper, a novel analysis method of the network connectedness based on the eigenvalue is derived, and a multi-layer distributed HF radio network structure is proposed. Both the theore tical analysis and the computer simulation results verify that the application of the proposed network structure in the HF radio communication can improve the anti demolishment ability of the HF network efficiently.

  12. Research Progress in Wet Chemical Etching of Silicate Glass%硅酸盐玻璃的化学处理研究进展

    Institute of Scientific and Technical Information of China (English)

    成惠峰; 李要辉; 吴云龙; 傅国英; 纪毅璞

    2011-01-01

    氢氟酸溶液常用于硅酸盐玻璃的表面处理,其化学反应机理一直备受关注.本文从氢氟酸电离反应出发,全面归纳氢氟酸稀溶液电离机理、平衡常数以及各电离产物的作用,重点总结了HF-SiO2反应动力学、各研究理论模型、反应速率公式和反应机理.针对目前硅酸盐玻璃的化学处理研究现状,认为硅酸盐玻璃在高浓度氢氟酸溶液和氢氟酸/强酸混合溶液中化学处理的应用将是未来的研究方向.%The reaction mechanism of wet chemical etching of silicate glass in hydrofluoric acid has attracted extensive attention over many years. Ionization reaction in dilute HF solution was introduced. The ionization equation and equilibrium constants and the function of components in dilute HF solution were reviewed. And the reaction kinetics, model, reaction rate formula and etching mechanism of HF-SiO2 reaction were summarized. In the future the application of wet chemical etching in concentrated HF solution and HF-strong acid mixture of wet chemical etching of silicate glass would be studied.

  13. Nanostructure of Calcium Silicate Hydrates in Cements

    KAUST Repository

    Skinner, L. B.

    2010-05-11

    Calcium silicate hydrate (CSH) is the major volume phase in the matrix of Portland cement concrete. Total x-ray scattering measurements with synchrotron x rays on synthetic CSH(I) shows nanocrystalline ordering with a particle diameter of 3.5(5) nm, similar to a size-broadened 1.1 nm tobermorite crystal structure. The CSH component in hydrated tricalcium silicate is found to be similar to CSH(I). Only a slight bend and additional disorder within the CaO sheets is required to explain its nanocrystalline structure. © 2010 The American Physical Society.

  14. Fabrication and characteristics of ZnO MOS capacitors with high-K HfO2 gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature.And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors.The temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display (FPD),flexible display,etc.The electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated.High frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are measured.The thermal stability and electronic stability of the ZnO capacitors are investigated,respectively.Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics.Besides,the ZnO capacitors can exhibit high thermal and electronic stabilities.

  15. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications.

    Science.gov (United States)

    Mendoza, J Guzmán; Frutis, M A Aguilar; Flores, G Alarcón; Hipólito, M García; Maciel Cerda, A; Azorín Nieto, J; Montalvo, T Rivera; Falcony, C

    2010-01-01

    Hafnium oxide (HfO(2)) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 degrees C. For substrate temperatures lower than 400 degrees C the deposited films were amorphous, while for substrate temperatures higher than 450 degrees C, the monoclinic phase of HfO(2) appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO(2), with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown. Copyright 2009 Elsevier Ltd. All rights reserved.

  16. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications

    Energy Technology Data Exchange (ETDEWEB)

    Guzman Mendoza, J. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional, Legaria 694, Miguel Hidalgo, 11500 Mexico D.F. (Mexico)], E-mail: joguzman@ipn.mx; Aguilar Frutis, M.A.; Flores, G. Alarcon [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional, Legaria 694, Miguel Hidalgo, 11500 Mexico D.F. (Mexico); Garcia Hipolito, M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Coyoacan, 04510 Mexico D.F. (Mexico); Maciel Cerda, A. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional, Legaria 694, Miguel Hidalgo, 11500 Mexico D.F. (Mexico); Azorin Nieto, J. [Universidad Autonoma Metropolitana- Iztapalapa, Av. San Rafael Atlixco 186, Col Vicentina, 09340 Mexico D.F. (Mexico); Rivera Montalvo, T. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional, Legaria 694, Miguel Hidalgo, 11500 Mexico D.F. (Mexico); Universidad Autonoma Metropolitana- Iztapalapa, Av. San Rafael Atlixco 186, Col Vicentina, 09340 Mexico D.F. (Mexico); Falcony, C. [Departamento de Fisica, CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)

    2010-04-15

    Hafnium oxide (HfO{sub 2}) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 deg. C. For substrate temperatures lower than 400 deg. C the deposited films were amorphous, while for substrate temperatures higher than 450 deg. C, the monoclinic phase of HfO{sub 2} appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO{sub 2}, with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

  17. Systematic Comparison of HF CMOS Transconductors

    NARCIS (Netherlands)

    Klumperink, Eric A.M.; Nauta, Bram

    2003-01-01

    Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels wi

  18. Electron impact on vibrationally cold {{HF}}^{+}

    Science.gov (United States)

    Cristian Stroe, Marius; Fifirig, Magda

    2016-12-01

    The dissociative recombination and vibrational excitation processes induced by electron impact on vibrationally cold {{HF}}+ are investigated in the framework of the multichannel quantum defect theory for electron energies below 1 eV. The thermal rate coefficients for the electron temperature range from 10 to 5000 K are reported.

  19. ORIGIN OF EXCESS (176)Hf IN METEORITES

    DEFF Research Database (Denmark)

    Thrane, Kristine; Connelly, James Norman; Bizzarro, Martin

    2010-01-01

    After considerable controversy regarding the (176)Lu decay constant (lambda(176)Lu), there is now widespread agreement that (1.867 +/- 0.008) x 10(-11) yr(-1) as confirmed by various terrestrial objects and a 4557 Myr meteorite is correct. This leaves the (176)Hf excesses that are correlated with...

  20. The origin of ferroelectricity in Hf1-xZrxO2: A computational investigation and a surface energy model

    Science.gov (United States)

    Materlik, R.; Künneth, C.; Kersch, A.

    2015-04-01

    The structural, thermal, and dielectric properties of the ferroelectric phase of HfO2, ZrO2, and Hf0.5Zr0.5O2 (HZO) are investigated with carefully validated density functional computations. We find that the free bulk energy of the ferroelectric orthorhombic Pca21 phase is unfavorable compared to the monoclinic P21/c and the orthorhombic Pbca phase for all investigated stoichiometries in the Hf1-xZrxO2 system. To explain the existence of the ferroelectric phase in nanoscale thin films, we explore the Gibbs/Helmholtz free energies as a function of stress and film strain and find them unlikely to become minimal in HZO films for technological relevant conditions. To assess the contribution of surface energy to the phase stability, we parameterize a model, interpolating between existing data, and find the Helmholtz free energy of ferroelectric grains minimal for a range of size and stoichiometry. From the model, we predict undoped HfO2 to be ferroelectric for a grain size of about 4 nm and epitaxial HZO below 5 nm. Furthermore, we calculate the strength of an applied electric field necessary to cause the antiferroelectric phase transformation in ZrO2 from the P42/nmc phase as 1 MV/cm in agreement with experimental data, explaining the mechanism of field induced phase transformation.

  1. Contamination process and laser-induced damage of HfO2/SiO2 coatings in vacuum

    Institute of Scientific and Technical Information of China (English)

    Ping Ma; Feng Pan; Songlin Chen; Zhen Wang; Jianping Hu; Qinghua Zhang; Jianda Shao

    2009-01-01

    The performances of HfO2/SiO2 single- and multi-layer coatings in vacuum influenced by contamination are studied. The surface morphology, the transmittance spectrum, and the laser-induced damage threshold are investigated. The results show that the contamination in vacuum mainly comes from the vacuum system and the contamination process is different for the HfO2 and SiO2 films. The laser-induced damage experiments at 1064 nm in vacuum show that the damage resistance of the coatings will decrease largely due to the organic contamination.

  2. The Post—deposition Anneal Effects on the Electrical Properties of HfO2 Gate Dielectric Deposited by Ion Beam Sputtering at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    KANGJinfeng; LIUXiaoyan; TIANDayu; WANGWei; LIANGuijun; XIONGGuangcheng; HANRuqi

    2003-01-01

    HfO2 high K gate dielectric films were fab-ricated on p-Si(100) substrates by ion beam sputtering at room temperature followed by a post-deposition anneal-ing (PDA). The PDA effects on the electrical properties of HfO2 gate dielectric films were studied. High quality HfO2 gate dielectric with small equivalent oxide thickness (EOT = 2.3nm), small hystereis (△VFB<50mV), and lowleakage current (< 1× 10-4A/cm2@lV) was fabricated.The studies of PDA effects on the electrical properties in-dicate that the PDA process in nitrogen ambient will be necessary for the HfO2 gate dielectric films deposited by ion beam sputtering the sintered target at room temper-ature in order to obtain small equivalent oxide thickness and low leakage currents, whereas a PDA in oxygen ambi-ent will be not required. The results also means that there is less oxygen vacancy defect produced in the HfO2 gate dielectric films during the deposition at room temperature.

  3. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

    Science.gov (United States)

    Martin, Dominik; Yurchuk, Ekaterina; Müller, Stefan; Müller, Johannes; Paul, Jan; Sundquist, Jonas; Slesazeck, Stefan; Schlösser, Till; van Bentum, Ralf; Trentzsch, Martin; Schröder, Uwe; Mikolajick, Thomas

    2013-10-01

    Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time for dielectric materials like Pb[ZrxTi1-x]O3 and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes is not trivial due to the necessity of an extremely thick gate stack. Recent developments have shown HfO2 to have ferroelectric properties, given the proper doping. Moreover, these doped HfO2 thin films only require layer thicknesses similar to the ones already in use in CMOS technology. This work will show how the incorporation of Si induces ferroelectricity in HfO2 based capacitor structures and finally demonstrate non-volatile storage in nFeFETs down to a gate length of 100 nm. A memory window of 0.41 V can be retained after 20,000 switching cycles. Retention can be extrapolated to 10 years.

  4. The use of Bacillus genus to dressing of silicate raw materials

    Directory of Open Access Journals (Sweden)

    Štyriaková Iveta

    2000-09-01

    Full Text Available Bacteria of Bacillus genus from Banská Hodruša ore deposit and from Horná Prievrana kaolin deposit caused a more intensive destruction of silicate minerals by their activity, especially by the metabolites production. Their activity resulted to the development of corrosive and enantiomorphic holes on silicate minerals surface when sulphidic minerals were released and the metals were extracted into solution.The monitoring of Bacillus spp. occurrence in various deposits with silicate minerals composition suggested that these bacteria can be found in several deposits and waste dumps with silicate minerals at Slovakia. The widest species representation was detected in samples from the Horná Prievrana kaolin deposit.The experiments with primary silicates showed either a more intensive destruction of silicate minerals accompanied by sulphides releasing from these minerals or a more intensive metals extraction from sulphidic minerals after ore dressing. The important percentage of precious metals extraction (30% of gold and 30% of argentine from silicate minerals can suggest a possibility of the regulation of cyanides use in precious metals winning. A process for biological removal of elements from the samples was the result of the cultivation of organic acids - producing strains of the genus Bacillus. Hovewer, these bacteria synthesized also polysaccharides during bioleaching. Extensive acidic mucopolysaccharide films, which entrapped mineral particles, were identified by the ruthenium red staining. Ore bioleaching can not compete with physical and chemical methods in the rapidity of metal extraction from rich ores without ecological criterion. However, biotechnology becomes an alternative way in metals extraction from poor ores or wastes from the economical as well as the ecological view.The laboratory experiments with secondary silicates confirmed various forms of iron binding in kaolins and an important influence of the iron binding form on the

  5. 21 CFR 172.410 - Calcium silicate.

    Science.gov (United States)

    2010-04-01

    ... CONSUMPTION (CONTINUED) FOOD ADDITIVES PERMITTED FOR DIRECT ADDITION TO FOOD FOR HUMAN CONSUMPTION Anticaking... agent in food in an amount not in excess of that reasonably required to produce its intended effect. (b... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Calcium silicate. 172.410 Section 172.410 Food...

  6. Stability of calcium silicate in basic solution

    Institute of Scientific and Technical Information of China (English)

    刘桂华; 李小斌; 彭志宏; 周秋生

    2003-01-01

    Mixture of CaO and SiO2 was sintered at 1 200 or 1 400 ℃ according to the mole ratio of CaO/SiO2 of 1 or 2, and then calcium silicate was leached in pure caustic or soda solution. The results indicated that calcium silicate exists much more stably in caustic solution than that in soda solution, and CaO*SiO2 is more stable than β-2CaO*SiO2 whether in caustic solution or in soda solution. The increase of sintering temperature favored the stability of calcium silicate in the leaching process. When β-2CaO*SiO2 was leached in soda solution, the increase of leaching temperature and time resulted in decomposing of more calcium silicate. And when β-2CaO*SiO2 was leached in caustic solution at high temperature, much 2CaO*SiO2*H2O but little CaO*SiO2*H2O appeared in slag.

  7. MODIFICATION OF SURFACE LAYERS FOR SILICATE GLASSES BY ELECTRON IRRADIATION

    Directory of Open Access Journals (Sweden)

    V. S. Brunov

    2014-05-01

    Full Text Available Experimental research results of silicate glass surface layers modification by the influence of electron beams with 5-50 keV energies and 20-50 mC/cm2 doses are presented. It is shown that during the glasses exposure to an electron beam with 20-50 keV electron energies, a gradient optical waveguide with increased refractive index on waveguide axis Δn = 0.01-0.04 is formed in the surface layer. Сhemical etching rate is increased in the exposed area by up to two times which is related to glass grid destruction. Depending on irradiation dose thin film or silver nanoparticles with the size less than 20nm are formed on the surface of the silver containing glasses for electron energies less than 10 keV. Silver films drawn on the surface of the glass are dissolved into the glass bulk for electron energies 20-50 keV and 20-50 mC/cm2 dose. Basic mechanisms causing these effects are: chemical bonds breaking of spatial glass grid by high energy electrons, formation of negative volume charge inside the glass and field migration of positive metal ions into the volume charge region. Achieved results can be used in photonics, integral optics and nanoplasmonics device fabrication.

  8. In-situ ALD growth of hafnium oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Karavaev, Konstantin; Tallarida, Massimo; Schmeisser, Dieter [Brandenburgische Technische Universitaet Cottbus (Germany). Angewandte Physik - Sensorik; Zschech, Ehrenfried [AMD Saxony LLC and Co. KG, Center for Complex Analysis, Dresden (Germany)

    2008-07-01

    We report on a novel system for in-situ atomic layer growth (ALD) of high-k dielectric films. First results were obtained for Hf-oxide samples by using Hf-tetrachloride as precursor and water as oxidizer. We compare the photoelectron spectra of Si 2p, O 1s and Hf 4f of our in-situ prepared films with samples (ex-situ) prepared by industrial ALD reactors and discuss similarities and differences observed in the core level spectra of the various samples by considering the different growth conditions.

  9. COMPARISON OF SOL-GEL SILICATE COATINGS ON Ti SUBSTRATE

    OpenAIRE

    2012-01-01

    The objective of the submitted work was to prepare and to characterize two types of silicate coatings prepared by the sol-gel method using the dip-coating technique on a titanium substrate. Efforts have been made to use mechanical properties of bio-inert titanium and bioactive properties of a silicate layer enriched with an admixture of compounds identified below. The first group consisted of silicate coatings containing silver, brushite and monetite. The other group of silicate coatings cont...

  10. Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors

    Science.gov (United States)

    Xie, Dan; Luo, Yafeng; Han, Xueguang; Ren, Tianling; Liu, Litian

    2009-12-01

    We have investigated the structural and electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with Bi3.15Nd0.85Ti3O12 (BNdT) thin film deposited on Si and hafnium oxide (HfO2)/Si substrates. Microstructural analysis reveals the formation of well-crystallized BNdT perovskite film and good interface between BNdT film and HfO2 buffer layer. Pt/BNdT/HfO2/Si structure exhibits a memory window of 1.12 V at an operation voltage of 3.5 V. The width of memory window for the MFIS structure varies with increasing thickness of HfO2 layer, and 4-nm-thickness is optimum. The results from the fatigue test indicate a slight degradation of the memory window after 1010 switching cycles. These properties are encouraging for the development of ferroelectric memory transistors.

  11. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

    Science.gov (United States)

    Fan, Zhen; Chen, Jingsheng; Wang, John

    2016-05-01

    Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

  12. The fatty acids and alkanes of Satureja adamovicii Silic and Satureja fukarekii Silic (NOTE

    Directory of Open Access Journals (Sweden)

    DUSANKA KITIC

    1999-05-01

    Full Text Available The content and composition of fatty acids and alkanes of Satureja adamovicii Silic and Satureja fukarekii Silic were analized by GC. It was found that unsaturated acids prevailed and that the major components were palmitic, oleic, linoleic and linolenic acids. The hydrocarbon fractions of pentane extracts were shown to consist of the alkane homologues (C17 to C34 with nonacosane and hentriacontane being prevailing compounds.

  13. 40 CFR 721.9513 - Modified magnesium silicate polymer (generic).

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Modified magnesium silicate polymer... Specific Chemical Substances § 721.9513 Modified magnesium silicate polymer (generic). (a) Chemical... as modified magnesium silicate polymer (PMN P-98-604) is subject to reporting under this section for...

  14. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    OpenAIRE

    2011-01-01

    Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the var...

  15. A small shoulder of optical absorption in polycrystalline HfO2 by LDA+U approach

    Science.gov (United States)

    Qin, Liyuan; Li, Jinping; Meng, Songhe; Lu, Hantao; Tohyama, Takami

    2016-10-01

    The dielectric function of the wide-gap optical material HfO2 is investigated by the local density approximation (LDA)+U approach. We focus on the origin of the shoulder-like structure near the edge of the band gap in the imaginary part of the dielectric function, which has been observed on the thin films of monoclinic HfO2. A comparison study on the three polymorphs of hafnia shows that regardless of the underlying crystal structure, the existence of the shoulder is mainly controlled by the value of the shortest length of Hf-O bonds. The proposition is further supported by the numerical simulations of isostatic pressing. A possible implication in high-pressure measurements is suggested accordingly.

  16. Formation of aligned silicon nanowire on silicon by electroless etching in HF solution

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, N.; Douani, R. [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Hadjersi, T., E-mail: hadjersi@yahoo.co [Unite de Developpement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Boukherroub, R. [Institut de Recherche Interdisciplinaire (IRI, FRE 2963), Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France)

    2009-12-15

    It was demonstrated that the etching in HF-based aqueous solution containing AgNO{sub 3} and Na{sub 2}S{sub 2}O{sub 8} as oxidizing agents or by Au-assisted electroless etching in HF/H{sub 2}O{sub 2} solution at 50 deg. C yields films composed of aligned Si nanowire (SiNW). SiNW of diameters {approx}10 nm were formed. The morphology and the photoluminescence (PL) of the etched layer as a function of etching solution composition were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and photoluminescence. It was demonstrated that the morphology and the photoluminescence of the etched layers strongly depends on the type of etching solution. Finally, a discussion on the formation process of the silicon nanowires is presented.

  17. REMPI Spectroscopy of HfF

    CERN Document Server

    Loh, Huanqian; Yahn, Tyler S; Looser, Herbert; Field, Robert W; Cornell, Eric A

    2012-01-01

    The spectrum of electronic states at 30000--33000 cm$^{-1}$ in hafnium fluoride has been studied using (1+1) resonance-enhanced multi-photon ionization (REMPI) and (1+1$'$) REMPI. Six $\\Omega' = 3/2$ and ten $\\Pi_{1/2}$ vibronic bands have been characterized. We report the molecular constants for these bands and estimate the electronic energies of the excited states using a correction derived from the observed isotope shifts. When either of two closely spaced $\\Pi_{1/2}$ electronic states is used as an intermediate state to access autoionizing Rydberg levels, qualitatively distinct autoionization spectra are observed. The intermediate state-specificity of the autoionization spectra bodes well for the possibility of using a selected $\\Pi_{1/2}$ state as an intermediate state to create ionic HfF$^+$ in various selected quantum states, an important requirement for our electron electric dipole moment (eEDM) search in HfF$^+$.

  18. Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on a Ge substrate

    Institute of Scientific and Technical Information of China (English)

    Fan Ji-Bin; Liu Hong-Xia; Fei Cheng-Xi; Ma Fei; Fan Xiao-Jiao; Hao Yue

    2013-01-01

    HfO2 films are deposited by atomic layer deposition (ALD) using tetrakis ethylmethylamino hafnium (TEMAH) as the hafnium precursor,while O3 or H2O is used as the oxygen precursor.After annealing at 500 ℃ in nitrogen,the thickness of Ge oxide's interfacial layer decreases,and the presence of GeO is observed at the H2O-based HfO2 interface due to GeO volatilization,while it is not observed for the O3-based HfO2.The difference is attributed to the residue hydroxyl groups or H2O molecules in H2O-based HfO2 hydrolyzing GeO2 and forming GeO,whereas GeO is only formed by the typical reaction mechanism between GeO2 and the Ge substrate for O3-based HfO2 after annealing.The volatilization of GeO deteriorates the characteristics of the high-κ films after annealing,which has effects on the variation of valence band offset and the C-V characteristics of HfO2/Ge after annealing.The results are confirmed by X-ray photoelectron spectroscopy (XPS) and electrical measurements.

  19. Characterizing Amorphous Silicates in Extraterrestrial Materials

    Science.gov (United States)

    Fu, X.; Wang, A.; Krawczynski, M. J.

    2015-12-01

    Amorphous silicates are common in extraterrestrial materials. They are seen in the matrix of carbonaceous chondrites as well as in planetary materials. Tagish Lake is one of the most primitive carbonaceous meteorites in which TEM and XRD analyses found evidence for poorly crystalline phyllosilicate-like species; Raman spectra revealed amorphous silicates with variable degree of polymerization and low crystallinity. On Mars, CheMin discovered amorphous phases in all analyzed samples, and poorly crystalline smectite in mudstone samples. These discoveries pose questions on the crystallinity of phyllosilicates found by remote sensing on Mars, which is directly relevant to aqueous alteration during geologic history of Mars. Our goal is to use spectroscopy to better characterize amorphous silicates. We use three approaches: (1) using silicate glasses synthesized with controlled chemistry to study the effects of silicate polymerization and (2) using phyllosilicates synthesized with controlled hydrothermal treatment to study the effect of crystallinity on vibrational spectroscopy, finally (3) to use the developed correlations in above two steps to study amorphous phases in meteorites, and those found in future missions to Mars. In the 1st step, silicate glasses were synthesized from pure oxides in a range of NBO/T ratios (from 0 to 4). Depending on the targeted NBO/T and composition of mixed oxides, temperatures for each experiment fell in a range from 1260 to 1520 °C, run for ~ 4 hrs. The melt was quenched in liquid N2 or water. Homogeneity of glass was checked under optical microscopy. Raman spectra were taken over 100 spots on small chips free of bubbles and crystals. We have observed that accompanying an increase of NBO/T, there is a strengthening and a position shift of the Raman peak near 1000 cm-1 (Si-Onon-bridging stretching mode), and the weakening of broad Raman peaks near 500 cm-1 (ring breathing mode) and 700cm-1 (Si-Obridging-Si mode). We are building the

  20. Characterization, integration and reliability of HfO{sub 2} and LaLuO{sub 3} high-κ/metal gate stacks for CMOS applications

    Energy Technology Data Exchange (ETDEWEB)

    Nichau, Alexander

    2013-07-15

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO{sub 3} and HfO{sub 2} are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO{sub 3} and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO{sub 3} is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO{sub 3} on germanium, germanate formation is shown. LaLuO{sub 3} is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO{sub 3} in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO{sub 3} and HfO{sub 2}. Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO{sub 2} gate stacks is scalable below 1 nm by the use of thinned interfacial SiO{sub 2}. The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the

  1. Digitally Driven Antenna for HF Transmission

    Science.gov (United States)

    2010-09-01

    the 1-MHz carrier signal. This signal is then fed into the base terminals of an NPN/ PNP transistor pair arranged in a push–pull configura- tion. A dual...negative voltage connected to the collector terminal of the PNP transistor . Since it was not possible to explicitly simulate the radia- tion of the time...complementary pair of switching transistors is driven with a pulsewidth modulated HF signal, eliminating the requirement for a frequency-dependent

  2. RFID UHF i HF w bibliotekach

    Directory of Open Access Journals (Sweden)

    Gładysz Bartłomiej

    2015-06-01

    Full Text Available The potential of the innovative Radio Frequency Identification (RFID technology to be applied for support, acceleration and automation of the circulation process of library collection is presented. Technology basics, and hardware and software components are described. Two different radio standards used in libraries are compared. The goal is to present the potential of RFID technology for libraries, to highlight the differences and to build a basis for further consideration of UHF and HF alternatives.

  3. Reliability study of Zr and Al incorporated Hf based high-k dielectric deposited by advanced processing

    Science.gov (United States)

    Bhuyian, Md Nasir Uddin

    Hafnium-based high-kappa dielectric materials have been successfully used in the industry as a key replacement for SiO2 based gate dielectrics in order to continue CMOS device scaling to the 22-nm technology node. Further scaling according to the device roadmap requires the development of oxides with higher kappa values in order to scale the equivalent oxide thickness (EOT) to 0.7 nm or below while achieving low defect densities. In addition, next generation devices need to meet challenges like improved channel mobility, reduced gate leakage current, good control on threshold voltage, lower interface state density, and good reliability. In order to overcome these challenges, improvements of the high-kappa film properties and deposition methods are highly desirable. In this dissertation, a detail study of Zr and Al incorporated HfO 2 based high-kappa dielectrics is conducted to investigate improvement in electrical characteristics and reliability. To meet scaling requirements of the gate dielectric to sub 0.7 nm, Zr is added to HfO2 to form Hf1-xZrxO2 with x=0, 0.31 and 0.8 where the dielectric film is deposited by using various intermediate processing conditions, like (i) DADA: intermediate thermal annealing in a cyclical deposition process; (ii) DSDS: similar cyclical process with exposure to SPA Ar plasma; and (iii) As-Dep: the dielectric deposited without any intermediate step. MOSCAPs are formed with TiN metal gate and the reliability of these devices is investigated by subjecting them to a constant voltage stress in the gate injection mode. Stress induced flat-band voltage shift (DeltaVFB), stress induced leakage current (SILC) and stress induced interface state degradation are observed. DSDS samples demonstrate the superior characteristics whereas the worst degradation is observed for DADA samples. Time dependent dielectric breakdown (TDDB) shows that DSDS Hf1-xZrxO2 (x=0.8) has the superior characteristics with reduced oxygen vacancy, which is affiliated to

  4. XRD and EXAFS studies on the structure of Er{sup 3+}-doped SiO{sub 2}-HfO{sub 2} glass-ceramic waveguides: Er{sup 3+}-activated HfO{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Afify, N D; Dalba, G [Dipartimento di Fisica, Universita di Trento, Via Sommarive 14, I-38123 Povo (Trento) (Italy); Rocca, F [IFN-CNR, Istituto di Fotonica e Nanotecnologie del Consiglio Nazionale delle Ricerche, Sezione ' FBK-CeFSA' di Trento, Via alla Cascata 56/C, I-38123 Povo (Trento) (Italy)], E-mail: rocca@science.unitn.it

    2009-06-07

    This paper describes the structure of Er{sup 3+}-doped SiO{sub 2}-HfO{sub 2} waveguides containing nanocrystals of HfO{sub 2}. Pure and 1 mol% Er{sup 3+}-doped 70SiO{sub 2}-30HfO{sub 2} films were deposited by the sol-gel method on amorphous SiO{sub 2} substrates using the dip-coating technique. Each waveguide has experienced a single thermal treatment at temperatures ranging from 900 to 1200 deg. C, for either short (30 min) or long (24 h) durations. Crystallization and microstructure were studied by x-ray diffraction (XRD). The local environments of hafnium and erbium ions were determined, respectively, from Hf and Er L{sub 3}-edges extended x-ray absorption fine structure (EXAFS) experiments. Both XRD and EXAFS results demonstrate the substitution of Hf{sup 4+} by Er{sup 3+} ions in the crystalline structure. XRD shows the nucleation of tetragonal HfO{sub 2} nanocrystals after heat treatment at 1000 deg. C for 30 min in the pure waveguide, and at 900 deg. C for 24 h in the waveguide doped with Er{sup 3+}. In both series, partial transformation from tetragonal to monoclinic HfO{sub 2} nanocrystals starts after heat treatment at 1100 deg. C for 24 h. The average crystallite size and size distribution can be controlled by thermal annealing temperature and duration, respectively, with brief treatment yielding a more homogeneous nanocrystal size.

  5. Intercalation of Layered Silicates, Layered Double Hydroxides, and Lead Iodide: Synthesis, Characterization and Properties.

    Science.gov (United States)

    Mehrotra, Vivek

    Layered silicates, layered double hydroxides, and lead iodide are lamellar solids that can incorporate guest species into the galleries between their layers. Various intercalated forms of these layered materials have been synthesized and their properties studied. The dielectric behavior of pristine fluorohectorite, a typical layered silicate, and Zn-Al layered double hydroxide is explained by considering the structural ordering and mobility of the intercalated water molecules, as well as models invoking fractal time processes and fractal structure. Intercalative polymerization of aniline and pyrrole into fluorohectorite leads to a multilayered structure consisting of single polymer chains alternately stacked with the 9.6 A thick silicate layers. The polymer chains are confined to the quasi two-dimensional interlayer space between the rigid host layers. The hybrid films exhibit highly anisotropic properties. The optical, electrical and mechanical behavior is discussed in terms of the molecular confinement of the polymer chains. Ethylenediamine functionalized C _{60} clusters have also been intercalated into fluorohectorite via an ion-exchange procedure. Intercalation results in an improved thermal stability of the functionalized C_{60} clusters. Rutherford backscattering spectrometry has been used to elucidate the mechanism of intercalative ion exchange of silver in muscovite mica, a layered silicate with a layer charge density of 2e per unit cell. It is proposed that ion-exchange progresses by intercalating successive galleries through the edges of the mica layers. Guest-host interactions have been studied in the system aniline-PbI_2. The optical and structural effects of aniline intercalation in lead iodide thin films is discussed. Intercalation leads to a large shift in the optical band gap of PbI_2. The observed change in band gap is not only due to the increased separation between the PbI_2 layers but also because of an electrostatic interaction between the

  6. Immiscible silicate liquids at high pressure: the influence of melt structure on elemental partitioning

    Energy Technology Data Exchange (ETDEWEB)

    Vicenzi, E. [Princeton Materials Laboratory, Princeton, NJ (United States); Green, T.H. [Macquarie Univ., North Ryde, NSW (Australia); Sie, S.H. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), North Ryde, NSW (Australia). Div. of Exploration Geoscience

    1993-12-31

    Micro-PIXE analyses have been applied to study partitioning of trace elements between immiscible silicate melts stabilised at 0.5 and 1.0 GPa over a temperature range of 1160-1240 deg C in the system SiO{sub 2}-FeO-Al{sub 2}0{sub 3}-K{sub 2}0 (+P{sub 2}0{sub 5}). The system was doped with a suite of trace elements of geochemical interest: Rb, Ba, Pb, Sr, La, Ce, Sm, Ho, Y, Lu, Th, U, Zr, Hf, Nb and Ta at approximately 200 ppm level for all elements except for the REE`s, Ba and Ta (600-1200 ppm). Trace element partitioning was found to be a complex function of cation field strength (charge/radius{sup 2}). Although field strength is important in determining the nature and degree of partitioning, the authors emphasised that it is only one component of the underlying mechanism for the way in which elements distribute themselves between two silicate liquids. 8 refs., 2 figs.

  7. Cooling rate calculations for silicate glasses.

    Science.gov (United States)

    Birnie, D. P., III; Dyar, M. D.

    1986-03-01

    Series solution calculations of cooling rates are applied to a variety of samples with different thermal properties, including an analog of an Apollo 15 green glass and a hypothetical silicate melt. Cooling rates for the well-studied green glass and a generalized silicate melt are tabulated for different sample sizes, equilibration temperatures and quench media. Results suggest that cooling rates are heavily dependent on sample size and quench medium and are less dependent on values of physical properties. Thus cooling histories for glasses from planetary surfaces can be estimated on the basis of size distributions alone. In addition, the variation of cooling rate with sample size and quench medium can be used to control quench rate.

  8. Tracking bubble evolution inside a silicic dike

    Science.gov (United States)

    Álvarez-Valero, Antonio M.; Okumura, Satoshi; Arzilli, Fabio; Borrajo, Javier; Recio, Clemente; Ban, Masao; Gonzalo, Juan C.; Benítez, José M.; Douglas, Madison; Sasaki, Osamu; Franco, Piedad; Gómez-Barreiro, Juan; Carnicero, Asunción

    2016-10-01

    Pressure estimates from rapidly erupted crustal xenoliths constrain the depth of intrusion of the silicic lavas hosting them. This represents an opportunity for tracking magmatic bubble's evolution and quantifying the variation in bubble volume during rapid magma ascent through a volcanic dike just prior to eruption. The petrology, stable-isotope geochemistry and X-ray micro-tomography of dacites containing crustal xenoliths, erupted from a Neogene volcano in SE Spain, showed an increase in porosity from ~ 1.7 to 6.4% from ~ 19 to 13 km depth, at nearly constant groundmass and crystal volumes. This result provides additional constraints for experimental and numerical simulations of subvolcanic magma-crust degassing processes in silicic systems, and may allow the characterization of volcanic eruptive styles based on volatile content.

  9. Recycle of silicate waste into mesoporous materials.

    Science.gov (United States)

    Kim, Jung Ho; Kim, Minwoo; Yu, Jong-Sung

    2011-04-15

    Template synthesis of porous carbon materials usually requires selective removal of template silica from the carbon/silica composites. It not only involves waste of valuable chemicals, but also poses significant environmental concerns including high waste treatment cost. Recycling of silicates released from such nanocasting methods is successfully performed for the first time to regenerate valuable mesoporous MCM and SBA type silica materials, which will not only help in saving valuable chemicals, but also in decreasing chemical waste, contributing in improvement of our environmental standards. This approach can thus improve cost effectiveness for the mass production of nanostructured carbon and others utilizing silica directed nanocasting method by recycling otherwise silicate waste into highly desirable valuable mesoporous silica.

  10. Band structure and electrical properties of MBE grown HfO{sub 2} - based alkaline earth Perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Peter, Dudek; Grzegorz, Lupina; Grzegorz, Kozlowski; Jarek, Dabrowski; Gunther, Lippert; Hans-Joachim, Muessig; Thomas, Schroeder [IHP-Microelectronics, Frankfurt, Oder (Germany); Dieter, Schmeisser [BTU, Cottbus (Germany)

    2010-07-01

    Ultra thin dielectric films (<20 nm) deposited on TiN electrodes are interesting for MIM capacitor application. High capacitance density and dielectric permittivity must be accompanied by extremely low leakage currents (10{sup -8} A/cm{sup 2}) at bias 0.5 V. To achieve such low leakage currents, high band gap and proper band alignment is required. Occupied electronic states can be probed with standard laboratory photoemission methods. Probing of unoccupied states is more challenging. Synchrotron based PES in combination with XAS forms a powerful method to study the band alignment. ASAM end station located at the U 49/2 PGM 2 beamline of BESSY II (Berlin) offers excellent conditions for performing such measurements. We investigated HfO{sub 2} - based alkaline earth perovskite - BaHfO{sub 3} with subsequent admixture of TiO{sub 2}, resulting in formation of BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} compound. The analysis of data indicates that band gap for HfO{sub 2} is similar to BaHfO{sub 3} and amounts 5.8 eV; for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} it decreases to 3.8 eV. We conclude that the addition of TiO{sub 2} to BaHfO{sub 3} increases significantly the dielectric permittivity but also impacts the band gap alignment. The conduction band offset shrinks, influencing the leakage current behavior.

  11. ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire capacitor structure fabricated solely by metalorganic chemical vapor deposition

    Science.gov (United States)

    Fujisawa, Hironori; Kuwamoto, Kei; Nakashima, Seiji; Shimizu, Masaru

    2016-02-01

    HfO2-based thin films are one of the key dielectric and ferroelectric materials in Si-CMOS LSIs as well as in oxide electronic nanodevices. In this study, we demonstrated the fabrication of a ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire (NW) capacitor structure solely by metalorganic chemical vapor deposition (MOCVD). 15-nm-thick dielectric (Hf,Zr)O2 and 40-nm-thick top ZnO electrode layers were uniformly grown by MOCVD on a ZnO NW template with average diameter, length, and aspect ratio of 110 nm, 10 µm, and ˜90, respectively. The diameter and aspect ratio of the resultant trilayerd NWs are 200-300 nm and above 30, respectively. The crystalline phase of HfO2 and stacked the structure are also discussed.

  12. Bonding to silicate ceramics: Conventional technique compared with a simplified technique

    Science.gov (United States)

    Perez-Barquero, Jorge-Alonso; Gonzalez-Angulo, Eva; Fons-Font, Antonio; Bustos-Salvador, Jose-Luis

    2017-01-01

    Background Silicate ceramic bonding is carried out by acid-etching with hydrofluoric acid (HF) followed by an application of silane. By replacing HF with ammonium polyfluoride, contained in the same flask as the silane, the number of steps in this clinical procedure, can be reduced, while maintaining bond strength values, and reducing toxicity. A shear bond test was performed to compare the conventional and the simplified surface treatment techniques. Material and Methods Twenty ceramic samples were fabricated from IPS emax CAD® ceramic (Ivoclar Vivadent) and divided into two groups (G1 and G2) (n=10). The conventional technique was applied to G1 samples, and the simplified technique to G2 samples. A resin cement cylinder was bonded to each sample. Afterwards, samples underwent shear bond strength testing in a universal test machine. Results G1 obtained 26.53±6.33 MPa and G2 23.52±8.41 MPa, without statistically significant differences between the two groups. Conclusions Monobond Etch&Prime appears to obtain equivalent results in terms of bond strength while simplifying the technique. Further investigation is required to corroborate these preliminary findings. Key words:Shear bond strength, surface treatment, bonding to ceramic, hydrofluoric acid, ammonium polyfluoride. PMID:28298979

  13. Six White Dwarfs with Circumstellar Silicates

    CERN Document Server

    Jura, M; Zuckerman, B

    2008-01-01

    Spitzer Space Telescope spectra reveal 10 micron silicate emission from circumstellar dust orbiting six externally-polluted white dwarfs. Micron-size glasses with an olivine stoichiometry can account for the distinctively broad wings that extend to 12 microns; these particles likely are produced by tidal-disruption of asteroids. The absence of infrared PAH features is consistent with a scenario where extrasolar rocky planets are assembled from carbon-poor solids.

  14. Resistless photochemical etching of a silicon wafer by UV laser with an H2O2 and HF aqueous solution

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A new resistless etching method has been developed for Silicon wafers. This new method uses an aqueous solution consisting of hydrogen peroxide (H2O2) and hydrogen fluoride (HF) as the activating etchants. A 193 nm ArF excimer laser and a 266 nm fourth harmonic generation Nd:YAG laser were used as the photon sources. Results showed that pattern etching has been achieved without any photoresist film. In the case of the 193 nm laser, the optimal etching appeared at a 1.3 H2O2/HF ratio, where an etch depth of 210 nm was achieved with a fluence of 29 mJ/cm2 and shot number of 10000. At the same conditions, the etch depth with H2O2 and HF solution was three times of that by using H2O and HF mixture. In the case of the 266 nm Nd:YAG laser, the optimal etching appeared at twice ratio of H2O2/HF, where the etch depth of 420 nm was achieved with a fluence of 12 mJ/cm2 and shot number of 30000. Results showed that the etch effect of the 266 nm Nd: YAG laser was more desirable than that of the 193 nm ArF excimer laser.``Keyords: UV laser, resistless photochemical etching, hydrogen peroxide (H2O2).

  15. Adsorption of dimeric surfactants in lamellar silicates

    Energy Technology Data Exchange (ETDEWEB)

    Balcerzak, Mateusz; Pietralik, Zuzanna [Department of Macromolecular Physics, Faculty of Physics, A. Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Domka, Ludwik [Department of Metalorganic Chemistry, Faculty of Chemistry, A. Mickiewicz University, Grunwaldzka 6, 60-780 Poznań (Poland); Skrzypczak, Andrzej [Institute of Chemical Technology, Poznań University of Technology, Berdychowo 4, 60-965 Poznań (Poland); Kozak, Maciej, E-mail: mkozak@amu.edu.pl [Department of Macromolecular Physics, Faculty of Physics, A. Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland)

    2015-12-01

    Highlights: • The intercalation of dimeric surfactants changed the morphology of MMT samples. • XRD indicated structures formed by surfactant molecules in interlayer space. • The four-step thermal decomposition of dimeric surfactant, confirms intercalation. - Abstract: The adsorption of different types of cationic surfactants in lamellar silicates changes their surface character from hydrophilic to hydrophobic. This study was undertaken to obtain lamellar silicates modified by a series of novel dimeric (gemini) surfactants of different length alkyl chains and to characterise these organophilised materials. Synthetic sodium montmorillonite SOMASIF® ME 100 (M) and enriched bentonite of natural origin (Nanoclay – hydrophilic bentonite®) were organophilised with dimeric (gemini) surfactants (1,1′-(1,4-butanediyl)bis(alkoxymethyl)imidazolium dichlorides). As a result of surfactant molecule adsorption in interlamellar space, the d-spacing (d{sub 001}) increased from 0.97 nm (for the anhydrous structure) to 2.04 nm. A Fourier transform infrared spectroscopy (FTIR) analysis of the modified systems reveals bands assigned to the stretching vibrations of the CH{sub 2} and CH{sub 3} groups and the scissoring vibrations of the NH group from the structure of the dimeric surfactants. Thermogravimetric (TG) and derivative thermogravimetric (DTG) studies imply a four-stage process of surfactant decomposition. Scanning electron microscopy (SEM) images provide information on the influence of dimeric surfactant intercalation into the silicate structures. Particles of the modified systems show a tendency toward the formation of irregularly shaped agglomerates.

  16. Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

    Science.gov (United States)

    Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

    2015-01-01

    The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

  17. Extent of metal-silicate disequilibrium during accretion and early differentiation of the Earth

    Science.gov (United States)

    Rubie, D. C.; Nimmo, F.; Morbidelli, A.; Frost, D. J.

    2012-12-01

    Earth, Mars, Venus and Mercury accreted on a timescale of 10-100 My through a series of violent collisions with planetesimals and embryos. The high energy of such impacts was sufficient to cause deep magma ocean formation which facilitated the segregation of metal and silicate liquids. Planetary cores thus formed as a multistage process that was inseparable from the accretion process. In order to better understand the formation and early differentiation of the terrestrial planets, we are integrating a multistage core-formation model with N-body accretion simulations. Constraints on model parameters are the compositions of the Earth's primitive mantle and, to a lesser extent, the mantles of Mars and Mercury which may be FeO rich and FeO-poor respectively. We use a least-squares minimization to optimise 4 model parameters. Elements currently considered include Si, O, Ni, Co, W, Nb, Cr, Ta and V. We concentrate on recent N-body simulations that result in an approximately Earth-mass planet at ~1 AU. In order to satisfy the model constraints, accretion has to be heterogeneous, with embryos and planetesimals originating in the inner part of the solar system (e.g. emulsify and equilibrate in a magma ocean and (2) the fraction of magma oceans that are involved in the equilibration process for both impacting planetesimals and embryos. Both estimates are crucial for interpreting Hf-W age determinations. Best results are obtained when the fraction of silicate mantle/magma ocean that interacts chemically with the metallic cores of impactors is limited and lies in the range 0.003 to 0.1, depending on the size of the impactor and magma ocean depth. The degree of incomplete metal equilibration depends on the extent to which the impactor's mantle participates in the metal-silicate equilibration process.

  18. Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Szymańska, Magdalena, E-mail: magdalena_szymanska@its.waw.pl [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland); Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Gierałtowska, Sylwia; Wachnicki, Łukasz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Grobelny, Marcin; Makowska, Katarzyna [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Mroczyński, Robert [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland)

    2014-05-01

    Highlights: • Structural and electrical characterization of HfO{sub x} and HfO{sub x}N{sub y} thin films. • Analysis of the influence of deposition process parameters on properties of films. • Investigation of the post-deposition annealing on HfO{sub x} and HfO{sub x}N{sub y} properties. • Experiment has been designed with use of Taguchi's orthogonal arrays. • The most favorable annealing temperature of HfO{sub x} and HfO{sub x}N{sub y} is 300 °C. - Abstract: The purpose of this work was to compare the structural and electrical properties of magnetron sputtered hafnium oxide (HfO{sub x}) and hafnium oxynitride (HfO{sub x}N{sub y}) thin films. A careful analysis of the influence of deposition process parameters, among them: pressure in the reactor chamber, Ar and O{sub 2} flow rate, power applied to the reactor chamber and deposition time, on electro-physical properties of HfO{sub x} and HfO{sub x}N{sub y} layers has been performed. In the course of this work we performed number of experiments by means of Taguchi's orthogonal arrays approach. Such a method allowed for the determination of dielectric layers properties depending on process parameters with relatively low amount of experiments. Moreover, the effects of post-deposition annealing on electrical characteristics of metal–insulator–semiconductor (MIS) structures with HfO{sub x} or HfO{sub x}N{sub y} gate dielectric and its structural properties have also been reported. Investigated hafnia thin films were characterized by means of spectroscopic ellipsometry (SE), electrical characteristics measurements, atomic force microscopy (AFM), X-ray diffraction spectroscopy (XRD) and Rutherford backscattering spectrometry (RBS)

  19. In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment

    Science.gov (United States)

    Chen, Chang Pang; Ong, Bin Leong; Ong, Sheau Wei; Ong, Weijie; Tan, Hui Ru; Chai, Jian Wei; Zhang, Zheng; Wang, Shi Jie; Pan, Ji Sheng; Harrison, Leslie John; Kang, Hway Chuan; Tok, Eng Soon

    2017-10-01

    Room temperature growth of HfO2 thin film on clean 2H-MoS2 via plasma-sputtering of Hf-metal target in an argon/oxygen environment was studied in-situ using x-ray photoelectron spectroscopy (XPS). The deposited film was observed to grow akin to a layer-by-layer growth mode. At the onset of growth, a mixture of sulfate- and sulfite-like species (SOx2- where x = 3, 4), and molybdenum trioxide (MoO3), are formed at the HfO2/MoS2 interface. An initial decrease in binding energies for both Mo 3d and S 2p core-levels of the MoS2 substrate by 0.4 eV was also observed. Their binding energies, however, did not change further with increasing HfO2 thickness. There was no observable change in the Hf4f core-level binding energy throughout the deposition process. With increasing HfO2 deposition, MoO3 becomes buried at the interface while SOx2- was observed to be present in the film. The shift of 0.4 eV for both Mo 3d and S 2p core-levels of the MoS2 substrate can be attributed to a charge transfer from the substrate to the MoO3/SOx2--like interface layer. Consequently, the Type I heterojunction valence band offset (conduction band offset) becomes 1.7 eV (2.9 eV) instead of 1.3 eV (3.3 eV) expected from considering the bulk HfO2 and MoS2 valence band offset (conduction band offset). The formation of these states and its influence on band offsets will need to be considered in their device applications.

  20. Lu-Hf systematics of the ultra-high temperature Napier Complex, East Antarctica: evidence for the early Archean formation of continental crust

    Science.gov (United States)

    Choi, S.; Mukasa, S. B.; Andronikov, A. V.; Osanai, Y.; Harley, S. L.; Kelly, N. M.

    2009-12-01

    The Napier Complex in East Antarctica comprises some of the oldest rocks on earth (~3.8 billion years old), overprinted by an ultra-high temperature (UHT) metamorphic event near the Archean-Proterozoic boundary. Garnet, orthopyroxene, sapphirine, osumilite, rutile and a whole rock representing an equilibrated assemblage from this belt yield a Lu-Hf isochron age of 2,403 ± 43 Ma. Preservation of the UHT mineral assemblage in the rock analyzed suggests rapid cooling with closure likely to have occurred for the Lu-Hf system at post-peak UHT conditions near a temperature of ~800C. Individual zircon grains from Gage Ridge within the Napier Complex yielded a remarkably uniform range of 176Hf/177Hf values between 0.280433 ± 7 and 0.280505 ± 10, corresponding to ɛHf > +5.6 at 3.85 Ga relative to the chondritic uniform reservoir (CHUR). Because of their exceedingly low Lu/Hf values (<0.001), the grains are effectively recording the initial Hf isotope composition of the magmatic systems from which the gneiss protoliths crystallized. These results indicate that (1) the source of the crustal materials that formed the Napier Complex at 3.85 Ga were depleted relative to the CHUR. The extent of depletion involved is higher than has been predicted by extrapolation from the Lu-Hf isotopic evolution inferred for the source of Proterozoic and Phanerozoic basalts, judging from an fLu/Hf value of 0.51, (2) the depleted mantle reservoir has been in existence since very early in Earth’s history, in agreement with the early differentiation of the Earth that the latest core formation models require, and (3) an extremely depleted source also mean that the bulk of continental crust was extracted from the mantle by ~3.8 Ga. Moreover, the results demonstrate that even the oldest silicic rocks in the complex are not likely to have formed from remobilized older crustal materials, but were instead juvenile products of mantle melting. In addition, zircons with metamorphic rims have a similar

  1. Carbonate- and silicate-rich globules in the kimberlitic rocks of northwestern Tarim large igneous province, NW China: Evidence for carbonated mantle source

    Science.gov (United States)

    Cheng, Zhiguo; Zhang, Zhaochong; Santosh, M.; Hou, Tong; Zhang, Dongyang

    2014-12-01

    We report carbonate- and silicate-rich globules and andradite from the Wajilitage kimberlitic rocks in the northwestern Tarim large igneous province, NW China. The carbonate-rich globules vary in size from 1 to 3 mm, and most have ellipsoidal or round shape, and are composed of nearly pure calcite. The silicate-rich globules are elliptical to round in shape and are typically larger than the carbonate-rich globules ranging from 2 to several centimeters in diameter. They are characterized by clear reaction rims and contain several silicate minerals such as garnet, diopside and phlogopite. The silicate-rich globules, reported here for the first time, are suggested to be related to the origin of andradite within the kimberlitic rocks. Our results show that calcite in the carbonate-rich globules has a high XCa (>0.97) and is characterized by extremely high concentrations of the total rare earth elements (up to 1500 ppm), enrichment in Sr (8521-10,645 ppm) and LREE, and remarkable depletion in Nd, Ta, Zr, Hf and Ti. The calcite in the silicate-rich globules is geochemically similar to those in the carbonate-rich globules except the lower trace element contents. Garnet is dominantly andradite (And59.56-92.32Grs5.67-36.03Pyr0.36-4.61Spe0-0.33) and is enriched in light rare earth elements (LREEs) and relatively depleted in Rb, Ba, Th, Pb, Sr, Zr and Hf. Phlogopite in the silicate-rich globules has a high Mg# ranging from 0.93 to 0.97. The composition of the diopside is Wo45.82-51.39En39.81-49.09Fs0.88-0.95 with a high Mg# ranging from 0.88 to 0.95. Diopside in the silicate-rich globules has low total rare earth element (REE) contents (14-31 ppm) and shows middle REE- (Eu to Gd), slight light REE- and heavy REE-enrichment with elevated Zr, Hf and Sr contents and a negative Nb anomaly in the normalized diagram. The matrix of the kimberlitic rocks are silica undersaturated (27.92-29.31 wt.% SiO2) with low Al2O3 (4.51-5.15 wt.%) and high CaO (17.29-17.77 wt.%) contents. The

  2. Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers

    Science.gov (United States)

    Takahashi, Kazuhiro; Aizawa, Koji; Park, Byung-Eun; Ishiwara, Hiroshi

    2005-08-01

    Metal-ferroelectric-insulator-semiconductor (MFIS) diodes and p-channel MFIS field-effect transistors (FETs) were fabricated and their electrical properties were characterized. These MFIS structures were formed using HfO2 as an insulating buffer layer, and SrBi2Ta2O9 (SBT) and (Bi,La)4Ti3O12 (BLT) as ferroelectric films. HfO2 buffer layers of about 8 nm physical thickness were deposited by ultrahigh-vacuum (UHV) electron-beam evaporation, then ferroelectric films of about 400 nm thickness were deposited by sol-gel spin coating. The fabricated p-channel MFIS-FETs with the SBT/HfO2 gate structure exhibited a drain current on/off ratio larger than 103 even after 30 days had elapsed. It was also found that the degradation of ferroelectricity was not pronounced even after applying 2.2× 1011 bipolar pulses.

  3. Effect of silicate solutions on metakaolinite based cementitious material

    Institute of Scientific and Technical Information of China (English)

    XIAO Xue-jun; LI Hua-jian; SUN Heng-hu

    2006-01-01

    High performance metakaolinite based cementitious materials were prepared with metakaolinite as main component, and the different modules of Na and Na-K silicate solutions as diagenetic agent. The results show that the mechanical properties are affected by different silicate solutions, compressive strengths of pastes hydrated for 3 d and 28 d with Na-K silicate solution (The modulus is 1) are about 43.68 and 78.52 MPa respectively. By analyzing the mechanical properties of Metakaolinite based cementitious materials, the diagenetic effect of lower module is better than higher module, and Na-K silicate solution is better than Na silicate solution. The structure of the Na and Na-K silicate solutions is studied with IR and 29Si NMR, the reason of the lower module and Na-K silicate solution improving the mechanical properties is that the low module silicate solution has lower polymeric degree of silicon dioxide, and the higher polymeric degree of silicon oxide tetrahedron(Q4) in Na-K silicate solution is less than Na silicate solution.

  4. L-Edge Xanes Measurements of the Oxidation State of Tungsten in Iron Bearing and Iron Free Silicate Glasses

    Science.gov (United States)

    Danielson, L. R.; Righter, K.; Sutton, S.; Newville, M.

    2008-01-01

    Tungsten is important in constraining core formation of the Earth because this element is a moderately siderophile element (depleted 10 relative to chondrites) and, as a member of the Hf-W isotopic system, it is useful in constraining the timing of core formation. A number of previous experimental studies have been carried out to determine the silicate solubility and metal-silicate partitioning behavior of W, including its concomitant oxidation state. However, results of previous studies are inconsistent on whether W occurs as W(4+) or W(6+). It is assumed that W(4+) is the cation valence relevant to core formation. Given the sensitivity to silicate composition of high valence cations, knowledge of the oxidation state of W over a wide range of fO2 is critical to understanding the oxidation state of the mantle and core formation processes. This study seeks to measure the W valence and change in valence state over the range of fO2 most relevant to core formation, around IW-2.

  5. Diseases associated with exposure to silica and nonfibrous silicate minerals. Silicosis and Silicate Disease Committee

    Energy Technology Data Exchange (ETDEWEB)

    1988-07-01

    Silicosis, a disease of historical importance, continues to occur cryptically today. Its pathogenesis is under ongoing study as new concepts of pathobiology evolve. In this article, the gross and microscopic features of the disease in the lungs and the lesions in lymph nodes and other viscera are described. These tissue changes are then discussed in the context of clinical disease and other possible or established complications of silica exposure (ie, scleroderma and rheumatoid arthritis, glomerulonephritis, and bronchogenic carcinoma). Silicates are members of a large family of common minerals, some of which have commercial importance. Silicates are less fibrogenic than silica when inhaled into the lungs, but cause characteristic lesions after heavy prolonged exposure. The features of these disease conditions are described herein. Various aspects of the mineralogy and tissue diagnosis of silicosis and lung disease due to silicates are reviewed. An overview of contemporary regulatory considerations is provided.204 references.

  6. Studies of Ultra High Temperature Ceramic Composite Components: Synthesis and Characterization of HfOxCy and Si Oxidation in Atomic Oxygen Containing Environments

    Science.gov (United States)

    2008-08-01

    protective coatings since either HfC was produced with either carbon vacancies or oxygen inclusion or the films had non-uniform properties. The preparation ...thin films prepared by laser ablation: material distribution and droplet problem, Mater. Sci. Eng., 1992, B13, 67-74. 13. Gyorgy E., Mihailescu...Adsorption of atomic oxygen and nitrogen at β- Cristobalite (100): a density functonal theory study, J. Phys. Chem. B, 2005, 109, 14954-14964. 8

  7. Composition dependent interfacial thermal stability, band alignment and electrical properties of Hf{sub 1−x}Ti{sub x}O{sub 2}/Si gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, J.W. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039 (China); He, G., E-mail: hegang@ahu.edu.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039 (China); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Chen, H.S.; Liu, Y.M.; Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039 (China); Chen, X.S. [National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China)

    2015-08-15

    Highlights: • Sputtered Hf{sub 1−x}Ti{sub x}O{sub 2} gate dielectrics with different TiO{sub 2} concentration have been deposited on Si substrates. • Decrease in interfacial layer thickness reduction in band gap with increasing the TiO{sub 2} component has been determined. • Hf{sub 1−x}Ti{sub x}O{sub 2} with incorporating TiO{sub 2} of 9% shows to be a promising candidate for high-k gate dielectrics. - Abstract: The optical properties, interface chemistry and band alignment of Hf{sub 1−x}Ti{sub x}O{sub 2} (x = 0.03, 0.08, 0.12 and 0.20) high-k gate dielectric thin films, deposited by RF sputtering on Si substrate, have been systematically investigated. The effect of TiO{sub 2} incorporation on the interfacial chemical structure and energy-band discontinuities has been investigated by using X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible spectroscopy (UV–vis). It has been found that the band gap and band offsets of the Hf{sub 1−x}Ti{sub x}O{sub 2} thin film decrease with the increase of TiO{sub 2} concentration. Meanwhile, the obtained band offsets are all over 1 eV. Thin film capacitors fabricated with the MOS configuration of Al/Hf{sub 1−x}Ti{sub x}O{sub 2}/n-Si/Al exhibits excellent electrical properties with low interface state density, hysteresis voltage and low leakage current density. The suitable band gap, symmetrical band offsets relative to Si and prominent electrical properties render sputtering-derived Hf{sub 1−x}Ti{sub x}O{sub 2} with 9% TiO{sub 2} films as promising candidates for high-k gate dielectrics.

  8. The Effects of Salt Water on the Slow Crack Growth of Soda Lime Silicate Glass

    Science.gov (United States)

    Hausmann, Bronson D.; Salem, Jonathan A.

    2016-01-01

    The slow crack growth parameters of soda-lime silicate were measured in distilled and salt water of various concentrations in order to determine if stress corrosion susceptibility is affected by the presence of salt and the contaminate formation of a weak sodium film. Past research indicates that solvents effect the rate of crack growth, however, the effects of salt have not been studied. The results indicate a small but statistically significant effect on the slow crack growth parameters A and n. However, for typical engineering purposes, the effect can be ignored.

  9. Effects of Aqueous Solutions on the Slow Crack Growth of Soda-Lime-Silicate Glass

    Science.gov (United States)

    Hausmann, Bronson D.; Salem, Jonathan A.

    2016-01-01

    The slow crack growth (SCG) parameters of soda-lime-silicate were measured in distilled and saltwater of various concentrations in order to determine if the presence of salt and the contaminate formation of a weak sodium film affects stress corrosion susceptibility. Past research indicates that solvents affect the rate of crack growth; however, the effects of salt have not been studied. The results indicate a small but statistically significant effect on the SCG parameters A and n at high concentrations; however, for typical engineering purposes, the effect can be ignored.

  10. Improvements on Signal Processing for HF Radar

    Institute of Scientific and Technical Information of China (English)

    LIU Yongtan; SHEN Yiying

    2001-01-01

    In this paper improvements on signalprocessing are achieved to enhance the performancesof H-F radar system, being unobtainable by the con-ventional signal processing. Using the improved sig-nal processing both high range resolution and longcoherent integration time may be obtained for goodbenefit to the target resolution and weak signal de-tection. Modification to the unmatched correspon-dence between range delay samples and range resolu-tion ceils saves an additional accumulation loss in therange processing. Finally, comparisons between theimproved and the conventional signal processing aregiven by numerical simulation.

  11. Low temperature formation of higher-k cubic phase HfO{sub 2} by atomic layer deposition on GeO{sub x}/Ge structures fabricated by in-situ thermal oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, R., E-mail: zhang@mosfet.t.u-tokyo.ac.jp [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Information Science and Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027 (China); Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S. [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-02-01

    We have demonstrated a low temperature formation (300 °C) of higher-k HfO{sub 2} using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO{sub x} interfacial layer. It is found that the cubic phase is dominant in the HfO{sub 2} film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO{sub 2} film on a 1-nm-thick GeO{sub x} form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO{sub 2} can be induced by the formation of six-fold crystalline GeO{sub x} structures in the underlying GeO{sub x} interfacial layer.

  12. Systematic Study on Triaxial Superdeformed Bands of Hf Isotopes

    Institute of Scientific and Technical Information of China (English)

    ZHANG Da-Li; DING Bin-Gang

    2009-01-01

    Properties of the triaxial superdeformed (TSD) bands of Hf isotopes are investigated systematically within the supersymmetry scheme including many-body interactions and a perturbation possessing the SO(5) (or SU(5)) symmetry on the rotational symmetry. Quantitatively good results of the γ-ray energies, the dynamical moments of inertia,and the spin of the TSD bands in Hf isotopes are obtained. It shows that this approach is quite powerful in describing the properties of the triaxial superdeformation in Hf isotopes.

  13. Determining Energy Distributions of HF-Accelerated Electrons at HAARP

    Science.gov (United States)

    2015-11-18

    AFRL-AFOSR-VA-TR-2015-0383 Determining energy distributions of HF-accelerated electrons at HAARP Christopher Fallen University of Alaska Fairbanks...2012 - 11/14/2015 4. TITLE AND SUBTITLE Determining energy distributions of HF-accelerated electrons at HAARP 5a. CONTRACT NUMBER FA9550-12-1-0424...transmitted from the High-frequency Active Auroral Research Program ( HAARP ) transmitter in Alaska. For a given fixed HF-plasma interaction altitude

  14. Physics of the Geospace Response to Powerful HF Radio Waves

    Science.gov (United States)

    2012-10-31

    studies of the response of the Earth’s space plasma to high-power HF radio waves from the High-frequency Active Auroral Research Program ( HAARP ...of HF heating and explored to simulate artificial ducts. DMSP- HAARP experiments revealed that HF-created ion outflows and artificial density ducts...in the topside ionosphere appeared faster than predicted by the models, pointing to kinetic (suprathermal) effects. CHAMP/GRACE- HAARP experiments

  15. Luminescent characteristics of hafnium oxide layers activated with trivalent terbium (HfO{sub 2}: Tb{sup 3+})

    Energy Technology Data Exchange (ETDEWEB)

    Guzman M, J.; Albarran A, D.; Alvarez F, O.; Alvarez P, M.A.; Garcia H, M. [IIM-UNAM, A.P. 70-360, 04510 Mexico D.F. (Mexico); Falcony, C. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)

    2006-07-01

    Hafnium oxide layers doped with trivalent terbium ions have been synthesized using the ultrasonic spray pyrolysis technique. Photoluminescence properties were studied as a function of growth parameters such as the substrate temperature and the terbium concentration. The films were grown starting from aqueous solution of Hafnium and Terbium chlorides. The results show that crystalline structure of HfO{sub 2}: Tb{sup +3} films, depends on the temperature of the substrate during the growth. For substrate temperatures less than 400 C the deposited material is amorphous and for substrate temperatures greater than 450 C, the crystalline structure turns out to be monoclinic. The elementary composition shows the HfO{sub 2} stoichiometric value with slight variations due to the incorporation of Tb, and Cl in the material processed at the highest temperature. Emission and excitation spectra were obtained for the HfO{sub 2}: Tb{sup +3} films using 262 nm as excitation wavelength. All emission spectra show bands centered at 488 nm, 542 nm, 584 nm and 621 nm, which correspond to the electronic transitions: {sup 5}D{sub 4} {yields} {sup 7}F{sub j} (j 3,...,6) characteristic of trivalent terbium ion. The dominant emission intensity corresponds to the green color, which depend on the terbium concentration incorporated inside the host matrix. (Author)

  16. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    Science.gov (United States)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  17. PEMISAHAN Zr – Hf SECARA SINAMBUNG MENGGUNAKAN MIXER SETTLER

    Directory of Open Access Journals (Sweden)

    Dwi Biyantoro

    2017-01-01

    Full Text Available ABSTRAK PEMISAHAN Zr – Hf SECARA SINAMBUNG MENGGUNAKANMIXER SETTLER. Telah dilakukan pemisahanZr – Hf secara sinambung menggunakan pengaduk pengenap (mixer settler 16 stage. Larutan umpan adalah zirkon nitrat dengan kadar Zr = 30786 ppm dan Hf = 499 ppm. Ekstraktan dipakai adalah solven 60 % TBP dalam kerosen dan larutan scrubbingyang dipakai adalah asam nitrat 1 M. Umpan masuk pada stageke 5 dikontakkan secara berlawanan arah dengan solven masuk pada stage ke 16 dan larutan scrubbing masuk pada stage ke 1. Tujuan penelitian ini adalah memisahkan unsur Zr dan Hf dari hasil olah pasir zirkon menggunakan solven TBP dengan alat mixer settler16 stage. Analisis umpan dan hasil proses pemisahan untuk zirkonium (Zr dilakukan dengan menggunakan alat pendar sinar-X, sedangkananalisis unsur hafnium (Hf menggunakan Analisis Pengaktifan Neutron (APN. Parameter penelitian dilakukan dengan variasi keasaman asam nitrat dalam umpan dan variasi waktu pada berbagai laju pengadukan. Hasil penelitian pemisahan unsur Zr dengan Hf diperolehkondisi optimum pada keasaman umpan 4 N HNO3, keseimbangan dicapai setelah 3jam dan laju pengadukan 3300 rpm. Hasil ekstrak  unsur zirkon (Zr diperoleh kadar sebesar 28577 ppm dengan efisiensi 92,76 % serta kadar pengotor hafnium (Hf sebesar 95 ppm. Kata Kunci: pemisahan Zr, Hf, ekstraksi, mixer settler, alat pendar sinar-X, APN. ABSTRACT SEPARATION of Zr - Hf CONTINUOUSLY USE THE MIXER SETTLER. Separation of Zr - Hf continuously using mixer settler 16 stage has been done. The feed solution is zircon nitrate concentration of Zr = 30786 ppm  and Hf = 499 ppm. As the solvent used extractant 60 % TBP in 40 % kerosene. Nitric acid solution used srubbing 1 M. The feed entered into stage to 5 is contacted with solvents direction on the stage to 16 and the scrubbing solution enter the stage to 1. The purpose of this study is to separate Zr and Hf of the results from the process of zircon sand using solvent TBP using 16 stage

  18. Mitigating Doppler shift effect in HF multitone data modem

    Science.gov (United States)

    Sonlu, Yasar

    1989-09-01

    Digital communications over High Frequency (HF) radio channels are getting important in recent years. Current HF requirements are for data transmission at rates 2.4 kbps or more to accommodate computer data links and digital secure voice. HF modems which were produced to meet these speeds are, serial modems and parallel modems. On the other hand, the HF sky-wave communication medium, the ionosphere, has some propagation problems such as multipath and Doppler shift. The effect of Doppler shift in a parallel modem which employs Differential Quadrature Phase Shift Keying (DQPSK) modulation is considered and a correction method to mitigate the Doppler Shift effect is introduced.

  19. Microstructural characterization of as-cast hf-b alloys

    Directory of Open Access Journals (Sweden)

    João Carlos Jânio Gigolotti

    2012-04-01

    Full Text Available An accurate knowledge of several metal-boron phase diagrams is important to evaluation of higher order systems such as metal-silicon-boron ternaries. The refinement and reassessment of phase diagram data is a continuous work, thus the reevaluation of metal-boron systems provides the possibility to confirm previous data from an investigation using higher purity materials and better analytical techniques. This work presents results of rigorous microstructural characterization of as-cast hafnium-boron alloys which are significant to assess the liquid composition associated to most of the invariant reactions of this system. Alloys were prepared by arc melting high purity hafnium (minimum 99.8% and boron (minimum 99.5% slices under argon atmosphere in water-cooled copper crucible with non consumable tungsten electrode and titanium getter. The phases were identified by scanning electron microscopy, using back-scattered electron image mode and X-ray diffraction. In general, a good agreement was found between our data and those from the currently accepted Hafnium-Boron phase diagram. The phases identified are αHfSS and B-RhomSS, the intermediate compounds HfB and HfB2 and the liquide L. The reactions are the eutectic L ⇔ αHfSS + HfB and L ⇔ HfB2 + B-Rhom, the peritectic L + HfB2 ⇔ HfB and the congruent formation of HfB2.

  20. A DFT study of temperature dependent dissociation mechanism of HF in HF(H2O)7 cluster

    Indian Academy of Sciences (India)

    Swatantra K Yadav; Hirdyesh Mishra; Ashwani K Tiwari

    2015-10-01

    We report a Density Functional Theoretical (DFT) study of dissociation of Hydrogen Fluoride (HF) in HF(H2O)7 cluster, using B3LYP functional and empirical exchange correlation functional M06-2X along with 6-31+G(d,p) basis set. Dissociation constant, KRP, of HF dissociation and pKa values of HF in cluster at various temperatures have been reported. It has been found that both KRP and pKa are highly dependent on temperature. The variation of pKa with temperature suggests that HF is strong acid at lower temperatures. Our study also reveals that HF is a stronger acid in water cluster than in bulk water. Further, the results obtained by DFT calculations have been compared with the earlier reported results obtained from Monte Carlo (MC) simulation. It is found that DFT results are qualitatively consistent with the results of MC simulation but quantitatively different.

  1. Determination of chlorine in silicate rocks

    Science.gov (United States)

    Peck, L.C.

    1959-01-01

    In a rapid accurate method for the determination of chlorine in silicate rocks, the rock powder is sintered with a sodium carbonate flux containing zinc oxide and magnesium carbonate. The sinter cake is leached with water, the resulting solution is filtered, and the filtrate is acidified with nitric acid. Chlorine is determined by titrating this solution with mercuric nitrate solution using sodium nitroprusside as the indicator. The titration is made in the dark with a beam of light shining through the solution. The end point of the titration is found by visually comparing the intensity of this beam of light with that of a similar beam of light in a reference solution.

  2. Nitridosilicates - a significant extension of silicate chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Schnick, W.; Huppertz, H. [Bayreuth Univ. (Germany). Lab. fuer Anorganische Chemie

    1997-05-01

    A new dimension in silicate chemistry becomes accessible through substitution of oxygen by nitrogen. Multinary nitridosilicates, such as Ln{sub 3}Si{sub 6}N{sub 11} (Ln = La, Ce, Pr, Nd, Sm) shown on the right, are built up from SiN{sub 4} tetrahedra into network structures. Owing to the stability of the covalent Si-N bonds and the high degree of condensation, the nitridosilicates show remarkable chemical and thermal stabilities, similar to Si{sub 3}N{sub 4}. (orig.) 22 refs.

  3. Microbial dissolution of silicate materials. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Schwartzman, D. [Howard Univ., Washington, DC (United States). Dept. of Biology

    1996-03-26

    The objective of this research was to better understand the role of selected thermophilic bacteria in the colonization and dissolution of silicate minerals, with potential applications to the HDR Project. The demonstration of enhanced dissolution from microbial effects is critically dependent on providing a mineral bait within a media deficient in the critical nutrient found in the mineral (e.g., Fe). Reproducible experimental conditions in batch experiments require agitation to expose mineral powders, as well as nearly similar initial conditions for both inoculated cultures and controls. It is difficult, but not impossible to ensure reproducible conditions with microbes favoring filamentous growth habits.

  4. Pressure induced novel compounds in the Hf-O system from first-principles calculations

    OpenAIRE

    2015-01-01

    Using first-principles evolutionary simulations, we have systematically investigated phase stability in the Hf-O system at pressure up to 120 GPa. New compounds Hf5O2, Hf3O2, HfO and HfO3 are discovered to be thermodynamically stable at certain pressure ranges and a new stable high-pressure phase is found for Hf2O with space group Pnnm and anti-CaCl2-type structure. Both P62m-HfO and P4m2-Hf2O3 show semimetallic character. Pnnm-HfO3 shows interesting structure, simultaneously containing oxide...

  5. Basics of the atomic layer deposition of HfO{sub 2} onto Si/SiO{sub 2} substrates: in-situ investigations with XPS, XAS and UHV-AFM

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, Massimo; Karavaev, Konstantin; Kolanek, Krzysztof; Schmeisser, Dieter [Brandenburgische Technische Universitaet, LS Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee, 17, 03046, Cottbus (Germany)

    2009-07-01

    We developed a reactor for investigating in-situ the atomic layer deposition (ALD) of HfO{sub 2}. X-ray photoelectron and X-ray absorption spectra were collected after each ALD cycle using synchrotron radiation at the beamline U49-2/PGM2 - BESSY II, Berlin. The morphology of the substrate and thin film surfaces was investigated after each ALD cycle with an UHV-AFM microscopy attached to the ALD reactor. We studied the ALD on differently prepared substrates, at different substrate temperatures, and using different Hf-precursors (HfCl{sub 4}, TEMAHf, TDMAHf). We observed the evolution of the Si/SiO{sub 2}/HfO{sub 2} system during the formation of the first three Hf-oxide layers; we detected the incorporation of Cl into the Hf-oxide films and proposed a mechanism responsible for the Cl contamination; we found evidence of the interfacial-SiO{sub 2} growth during the initial ALD cycles and of dipole formation at the HfO{sub 2}/SiO{sub 2} interface. In this contribution we illustrate the basics of the technique used, and discuss the physical-chemical properties of ALD on the basis of the experimental results.

  6. In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

    Energy Technology Data Exchange (ETDEWEB)

    Marchack, Nathan; Kim, Taeseung; Chang, Jane P., E-mail: jpchang@seas.ucla.edu [Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095 (United States); Blom, Hans-Olof [Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala (Sweden)

    2015-05-15

    The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy and the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.

  7. Properties of Ultra-Thin Hafnium Oxide and Interfacial Layer Deposited by Atomic Layer Deposition

    Institute of Scientific and Technical Information of China (English)

    Taeho Lee; Young-Bae Kim; Kyung-Il Hong; Duck-Kyun Choi; Jinho Ahn

    2004-01-01

    Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.

  8. Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices

    Science.gov (United States)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2016-12-01

    Low leakage current density and high relative permittivity (dielectric constant) are the key factor in order to replace the SiO2 from Si-based technology toward its further downscaling. HfO2 thin films received significant attention due to its excellent optoelectronic properties. In this work, ultra-thin (17 nm) HfO2 films on Si substrate are fabricated by RF sputtering. As deposited films are amorphous in nature and in order to get the reasonable high dielectric constant, the films are annealed (700 °C, 30 min) in nitrogen environment. A high refractive index (2.08) and small grain size ( 10) nm were extracted from ellipsometry and XRD, respectively. The AFM study revealed a small RMS surface roughness 9 Å. For electrical characterization, films are integrated in metal-insulator-semiconductor capacitors structure. The oxide capacitance ( C ox), flat band capacitance ( C FB), flat band voltage ( V FB), and oxide-trapped charges ( Q ot) calculated from high-frequency (1 MHz) C- V curve are 490, 241 pF, 1.21 V and 1.8 × 1012 cm-2, respectively. The dielectric constant calculated from accumulation capacitance is 17. The films show a low leakage current density 6.8 × 10-9 A/cm2 at +1 V, and this is due to the reduction in oxygen vacancies concentration as we performed annealing in N2 environment. The band gap of the films is estimated from O 1 s loss spectra and found 5.7 eV. The electron affinity ( χ) and HfO2/Si barrier height (conduction band offset) extracted from UPS spectra are 1.88 and 2.17 eV, respectively. A trap state with 0.99 eV activation energy below the conduction band edge is found and assigned to the fourfold coordinated oxygen vacancy in m-HfO2.

  9. Unusual kinetic behavior in cathodic H2 evolution from KF.2HF melts at mild-steel and alloy electrodes

    Directory of Open Access Journals (Sweden)

    Conway Con B.E.

    2004-01-01

    Full Text Available Apart from its interest as a "model" process for kinetic studies of gas-evolving electrode reactions, the cathodic hydrogen evolution reaction (her is involved in several processes that are of importance in applied electrochemistry, e.g., as the cathodic co-reactions in the commercial production of C12 and F2, in electrolyses for production of hydrogen, in electrochemical hydrogenation and, indirectly, as the partial process in corrosion of base metals in the absence of oxygen. The present paper reports several aspects of the unusual behavior of the her that is involved as the co-reaction to electrolytic production of F2 from KF/HF melts using carbon anodes and Fe or mild-steel cathodes. Anomalous anodic polarization behavior that arises in electrolytic generation of F2 from KF/HF melts at carbon electrodes is well known. It is characterized by very high Tafel slopes associated with "CF" film formation and by sluggish F2 bubble disengagement from the electrode. Interest in such effects has, however, tended to overshadow rather similar, so-called "hyper polarization" effects that also arise in the cathodic reaction, but for different reasons. The origins and nature of such effects are described and characterized in the present paper, and comparisons are made between behavior of Hz evolution from KF.2HF and that from the aquo-system analogue, KOH.2H2O. An important aspect is the very different interfacial behavior in KF/HF or KF.2HF melts from that in the corresponding aquo-system. Effects of As-species in HF feeds is investigated in terms of electro catalysis and poisoning effects on the her.

  10. Silicate mineralogy at the surface of Mercury

    Science.gov (United States)

    Namur, Olivier; Charlier, Bernard

    2017-01-01

    NASA's MESSENGER spacecraft has revealed geochemical diversity across Mercury's volcanic crust. Near-infrared to ultraviolet spectra and images have provided evidence for the Fe2+-poor nature of silicate minerals, magnesium sulfide minerals in hollows and a darkening component attributed to graphite, but existing spectral data is insufficient to build a mineralogical map for the planet. Here we investigate the mineralogical variability of silicates in Mercury's crust using crystallization experiments on magmas with compositions and under reducing conditions expected for Mercury. We find a common crystallization sequence consisting of olivine, plagioclase, pyroxenes and tridymite for all magmas tested. Depending on the cooling rate, we suggest that lavas on Mercury are either fully crystallized or made of a glassy matrix with phenocrysts. Combining the experimental results with geochemical mapping, we can identify several mineralogical provinces: the Northern Volcanic Plains and Smooth Plains, dominated by plagioclase, the High-Mg province, strongly dominated by forsterite, and the Intermediate Plains, comprised of forsterite, plagioclase and enstatite. This implies a temporal evolution of the mineralogy from the oldest lavas, dominated by mafic minerals, to the youngest lavas, dominated by plagioclase, consistent with progressive shallowing and decreasing degree of mantle melting over time.

  11. Research drilling in young silicic volcanoes

    Energy Technology Data Exchange (ETDEWEB)

    Eichelberger, J.C.

    1989-06-30

    Magmatic activity, and particularly silicic magmatic activity, is the fundamental process by which continental crust forms and evolves. The transport of magma from deep crustal reservoirs to the surface is a neglected but important aspect of magmatic phenomena. It encompasses problems of eruptive behavior, hydrothermal circulation, and ore deposition, and must be understood in order to properly interpret deeper processes. Drilling provides a means for determining the relationship of shallow intrusive processes to eruption processes at young volcanoes where eruptions are best understood. Drilling also provides a means for directly observing the processes of heat and mass transfer by which recently emplaced intrusions approach equilibrium with their new environment. Drilling in the Inyo Chain, a 600-year-old chain of volcanic vents in California, has shown the close relationship of silicic eruption to shallow dike emplacement, the control of eruptive style by shallow porous-flow degassing, the origin of obsidian by welding, the development of igneous zonation by viscosity segregation, and the character and size of conduits in relation to well-understood magmatic and phreatic eruptions. 36 refs., 9 figs.

  12. Stability constants for silicate adsorbed to ferrihydrite

    DEFF Research Database (Denmark)

    Hansen, Hans Christian Bruun; Wetche, T.P.; Raulund-Rasmussen, Karsten

    1994-01-01

    experiments in 0.01 m NaNO3 electrolyte (pH 3-6). The surface equilibrium constants were calculated according to the two-layer model by Dzombak & Morel (1990). Near equilibrium between protons/hydroxyls in solution and the ferrihydrite surface was obtained within minutes while equilibration with silicate...... required days-weeks, both reactions probably being diffusion controlled. Applying the values for specific surface area and site densities for ferrihydrite used by Dzombak & Morel (1990) (600 m2 g-1, 3.4 mumole m-2) the constants pK(al)intr 6.93 +/- 0.12, pK(a2)intr = 8.72 +/- 0.17 and log K(Si) = 3.62 were...... calculated by using the FITEQL optimization routine. Use of the specific surface area actually measured (269 m2 g-1) gave a poorer fit of the experimental data. Due to the slow adsorption of silicate and hence long shaking times, changes in the surface characteristics of the ferrihydrite seem to take place...

  13. Layered amphibolite sequence in NE Sardinia, Italy: remnant of a pre-Variscan mafic silicic layered intrusion?

    Science.gov (United States)

    Franceschelli, Marcello; Puxeddu, Mariano; Cruciani, Gabriele; Dini, Andrea; Loi, Marilisa

    2005-04-01

    A banded amphibolite sequence of alternating ultramafic, mafic (amphibolite) and silicic layers, tectonically enclosed within Variscan migmatites, outcrops at Monte Plebi (NE Sardinia) and shows similarities with leptyno-amphibolite complexes. The ultramafic layers consist of amphibole (75-98%), garnet (0-20%), opaque minerals (1-5%) and biotite (0-3%). The mafic rocks are made up of amphibole (65-80%), plagioclase (15-30%), quartz (0-15%), opaque minerals (2-3%) and biotite (0-2%). The silicic layers consist of plagioclase (60-75%), amphibole (15-30%) and quartz (10-15%). Alteration, metasomatic, metamorphic and hydrothermal processes did not significantly modify the original protolith chemistry, as proved by a lack of K2O-enrichment, Rb-enrichment, CaO-depletion, MgO-depletion and by no shift in the rare earth element (REE) patterns. Field, geochemical and isotopic data suggest that ultramafic, mafic and silicic layers represent repeated sequences of cumulates, basic and acidic rocks similar to macrorhythmic units of mafic silicic layered intrusions. The ultramafic layers recall the evolved cumulates of Skaergaard and Pleasant Bay mafic silicic layered intrusions. Mafic layers resemble Thingmuli tholeiites and chilled Pleasant Bay mafic rocks. Silicic layers with Na2O: 4-6 wt%, SiO2: 67-71 wt% were likely oligoclase-rich adcumulates common in many mafic silicic layered intrusions. Some amphibolite showing a strong Ti-, P-depletion and REE-depletion are interpreted as early cumulates nearly devoid of ilmenite and phosphates. All Monte Plebi rocks have extremely low Nb, Ta, Zr, Hf content and high LILE/HFSE ratios, a feature inherited from the original mantle sources. The mafic and ultramafic layers show slight and strong LREE enrichment respectively. Most mafic layer samples plot in the field of continental tholeiites in the TiO2-K2O-P2O5 diagram and are completely different from N-MORB, E-MORB and T-MORB as regards REE patterns and Nd, Sr isotope ratios but show

  14. TiO{sub 2} on magnesium silicate monolith: effects of different preparation techniques on the photocatalytic oxidation of chlorinated hydrocarbons

    Energy Technology Data Exchange (ETDEWEB)

    Cardona, Ana I.; Candal, Roberto; Sanchez, Benigno; Avila, Pedro; Rebollar, Moises

    2004-05-01

    In this article, the comparative results of the photocatalytic oxidation of trichloroethylene (TCE) alone and a mixture of chlorinated hydrocarbons (trichloroethylene, perchloroethylene and chloroform) in gas phase, obtained with three different monolithic catalysts in a flat reactor frontally illuminated with a Xenon lamp are presented. The three catalysts incorporate titanium dioxide (TiO{sub 2}) as active phase on a magnesium silicate support, by means of different procedures: (i) incorporation of commercial TiO{sub 2} powder into the silicate matrix ('massic monolith'); (ii) sol-gel coating of the silicate support; (iii) impregnation with a commercial TiO{sub 2} aqueous suspension of the same silicate support. In the first case, the massic monolith was made from a 50:50 w/w mixture of magnesium silicate and 'Titafrance G5' TiO{sub 2} powder. In the second case, a magnesium silicate monolith was coated with several layers of an aqueous TiO{sub 2} sol prepared from hydrolysis and condensation of titanium tetra-isopropoxide (Ti(OC{sub 3}H{sub 7}){sub 4}) in excess of acidified water (acid catalysis). The third catalyst was prepared by impregnating the same silicate support with several layers of 'Titafrance G5' TiO{sub 2} powder water suspension. All the catalysts were thermal treated under comparable conditions in order to fix the TiO{sub 2} active phase to the silicate support. Although the performance of the massic monolith was better than the sol-gel monolith, the latter is of great interest because this technique allows the chemical composition of the active films to be easily modified.

  15. Synthesis of Freestanding HfO2 Nanostructures

    Science.gov (United States)

    2011-04-05

    Tang J, Fabbri J, Robinson RD, Zhu Y, Herman IP, Steigerwald ML, Brus LE: Solid-solution nanoparticles:use of a nonhydrolytic sol-gel synthesis to...colloidal HfO2 nanorods. Adv Mater 2007, 19:2608-2612. Page 21 5. Qiu X, Howe JY, Cardoso MB, Polat O, Heller W: Size control of highly ordered HfO2

  16. Parametric excitation of whistler waves by HF heater

    Science.gov (United States)

    Kuo, S. P.; Lee, M. C.

    1989-01-01

    Possible generation of whistler waves by Tromso HF heater is investigated. It is shown that the HF heater wave can parametrically decay into a whistler wave and a Langmuir wave. Since whistler waves may have a broad range of frequency, the simultaneously excited Langmuir waves can have a much broader frequency bandwidth than those excited by the parametric decay instability.

  17. Study of {sup 179}Hf{sup m2} excitation

    Energy Technology Data Exchange (ETDEWEB)

    Vishnevsky, I. N.; Zheltonozhsky, V. A., E-mail: zhelton@kinr.kiev.ua; Savrasov, A. N. [National Academy of Sciences of Ukraine, Institute for Nuclear Research (Ukraine); Mazur, V. M. [National Academy of Sciences of Ukraine, Institute of Electronic Physics (Ukraine)

    2016-12-15

    Isomeric ratios of {sup 179}Hf{sup m2,g} yields in the (γ, n) reaction and the cross section for the {sup 179}Hf{sup m2} population in the (α, p) reaction are measured for the first time at the end-point energies of 15.1 and 17.5 MeV for bremsstrahlung photons and 26 MeV for alpha particles. The results are σ = (1.1 ± 0.11) × 10{sup −27} cm{sup 2} for the {sup 176}Lu(α, p){sup 179}Hf{sup m2} reaction and Y{sub m2}/Y{sub g} = (6.1 ± 0.3) × 10{sup −6} and (3.7 ± 0.2) × 10{sup −6} for the {sup 180}Hf(γ, n){sup 179}Hf{sup m22} reaction at E{sub ep} =15.1 and 17.5 MeV, respectively. The experimental data on the relative {sup 179}Hf{sup m2} yield indicate a single-humped shape of the excitation function for the {sup 180}Hf(γ, n){sup 179}Hf{sup m2} reaction. Simulation is performed using the TALYS-1.4 and EMPIRE-3.2 codes.

  18. Crystal structure of Si-doped HfO2

    Science.gov (United States)

    Zhao, Lili; Nelson, Matthew; Aldridge, Henry; Iamsasri, Thanakorn; Fancher, Chris M.; Forrester, Jennifer S.; Nishida, Toshikazu; Moghaddam, Saeed; Jones, Jacob L.

    2014-01-01

    Si-doped HfO2 was prepared by solid state synthesis of the starting oxides. Using Rietveld refinement of high resolution X-ray diffraction patterns, a substitutional limit of Si in HfO2 was determined as less than 9 at. %. A second phase was identified as Cristobalite (SiO2) rather than HfSiO4, the latter of which would be expected from existing SiO2-HfO2 phase diagrams. Crystallographic refinement with increased Si-dopant concentration in monoclinic HfO2 shows that c/b increases, while β decreases. The spontaneous strain, which characterizes the ferroelastic distortion of the unit cell, was calculated and shown to decrease with increasing Si substitution.

  19. Petrophysical Analysis of Siliceous Ooze Sediments, Ormen Lange Field, Norway

    DEFF Research Database (Denmark)

    Awedalkarim, Ahmed; Fabricius, Ida Lykke

    Skeletal remains of siliceous algae form biogenic fine grained highly porous pelagic siliceous ooze sediments that were found above the reservoir of the Ormen Lange gas field which is located in the southern part of the Norwegian Sea (Figure 1a). The Palaeocene sandstone of the “Egga” Formation i...

  20. Silicate Adsorption in Paddy Soils of Guangdong Province, China

    Institute of Scientific and Technical Information of China (English)

    HUANG Li-Yuan; LI Hua-Xing; ZHANG Xin-Ming; LU Wei-Sheng; LIU Yuan-Jin

    2006-01-01

    Silicate adsorption in eight paddy soils developed from four different parent materials in Guangdong Province, China was examined to obtain fundamental knowledge of silicate adsorption to improve the efficacy of silicate fertilizer use in these areas. A correlation analysis showed that silicate adsorption did not obey the Langmuir equation (r = -0.664-0.301) but did obey the Freundlich and Temkin equations (P ≤ 0.01, r = 0.885-0.990). When the equilibrium silicate concentration (Ci) was less than 45 mg SiO2 kg-1, the adsorption capacity was in the following decreasing order of paddy soils: basalt-derived > Pearl River Delta sediment-derived > granite-derived > sand-shale-derived. Stepwise regression and path analysis showed that for the investigated paddy soils amorphous MnO and Al2O3 were the two most important materials that affected silicate adsorption. Moreover, as Ci increased, amorphous Al2O3 tended to play a more important role in silicate adsorption, while the effects of amorphous MnO on silicate adsorption tended to decrease.

  1. Crystalline silicates in AGB and post-AGB stars

    NARCIS (Netherlands)

    Waters, LBFM; Molster, FJ; LeBertre, T; Lebre, A; Waelkens, C

    1999-01-01

    We discuss ISO spectroscopy of oxygen-rich dust shells surrounding evolved stars. The dust that condenses in the outflows of stars on the Asymptotic Giant Branch consists mainly of amorphous silicates and simple oxides. For high mass loss rates, crystalline silicates begin to appear at modest abunda

  2. The shape and composition of interstellar silicate grains

    NARCIS (Netherlands)

    Min, M.; Waters, L.B.F.M.; de Koter, A.; Hovenier, J.W.; Keller, L.P.; Markwick-Kemper, F.

    2007-01-01

    We investigate the composition and shape distribution of silicate dust grains in the interstellar medium. The effects of the amount of magnesium and iron in the silicate lattice are studied in detail. We fit the spectral shape of the interstellar 10 mu m extinction feature as observed towards the ga

  3. The shape and composition of interstellar silicate grains

    NARCIS (Netherlands)

    Min, M.; Waters, L.B.F.M.; de Koter, A.; Hovenier, J.W.; Keller, L.P.; Markwick-Kemper, F.

    2007-01-01

    We investigate the composition and shape distribution of silicate dust grains in the interstellar medium. The effects of the amount of magnesium and iron in the silicate lattice are studied in detail. We fit the spectral shape of the interstellar 10 mu m extinction feature as observed towards the

  4. The (178m2)Hf Controversy

    Energy Technology Data Exchange (ETDEWEB)

    Becker, J A; Gemmell, D S; Schiffer, J P; Wilhelmy, J B

    2003-07-24

    Since its discovery in the 1960's the {sup 178m2}Hf isomer has garnered high attention from both the basic and applied communities in nuclear science. It's combination of high spin (16+), long half life (31 yrs), and high excitation energy (2.446 MeV) offer unique possibilities as an energy storage medium. Interest in the isomer was rekindled beginning in 1999 when a series of publications began to appear from a group (referred to here as the ''Texas collaboration'') primarily based at the University of Texas, Dallas [1]. They reported observations that some of the stored energy could be released (''triggered'') when the isomer was exposed to a fluence of photons in the energy range {approx}10 to {approx}60 keV. The implications of this observation are profound. Even though the claimed cross section for the process was {approx}7 orders of magnitude greater than would be predicted from the known systematics of photon absorption by nuclei in this mass range [2], such a highly efficient method for triggering the isomeric deexcitation immediately suggested applications utilizing the explosive or the controlled gradual energy release from a very compact source. The prospect of such applications has focused considerable interest on realizing the promise that is implicit in the reported observations. However, two experiments performed by a group from ANL/LANL/LLNL at the Advanced Photon Source at Argonne (the ''APS collaboration'') reported negative results for the observation of any photon-triggered deexcitation of the {sup 178m2}Hf isomer [3]. This has led to a continued controversy, where both sides have adamantly defended their observations. At this point an outsider has difficulty determining whether there is indeed a triggering effect that should be pursued energetically with substantial resources, or whether the phenomenon consists of overly optimistic interpretation of data.

  5. Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

    Science.gov (United States)

    Qian, Ling-Xuan; Wu, Ze-Han; Zhang, Yi-Yu; Liu, Yuan; Song, Jia-Qi; Liu, Xing-Zhao; Li, Yan-Rong

    2017-04-01

    Amorphous InGaZnO4 thin film transistors (a-IGZO TFTs) with HfLaO gate dielectrics have been widely demonstrated to possess extremely excellent electrical characteristics, and thus show great potential for applications in various next-generation electronic products. Nevertheless, the in-depth understanding of HfLaO/IGZO interfacial features is still lacking, which makes further device optimization lack clear guidance. In this work, the band alignment and interfacial chemical structure of a sputtering-prepared HfLaO/IGZO heterojunction was investigated through x-ray photoelectron spectroscopy. The valence and conduction band offsets (ΔE v and ΔE c) at the interface were determined to be 0.57 eV and 1.48 eV, respectively. The relatively large ΔE v is mainly attributed to the formation of the interfacial layer (IL) and thus the upward band bending from IGZO to the surface of HfLaO. Furthermore, it was found that the oxygen vacancies on the surface of IGZO were significantly suppressed upon the deposition of HfLaO, which not only explained the previously reported ultrahigh performance of a-IGZO/HfLaO TFTs to some extent, but also additionally validated the formation of the IL. Our findings have successfully revealed the importance of ILs in modifying the band alignment and interfacial trap states of HfLaO/IGZO heterojunctions, thus suggesting a potential route to further optimizing a-IGZO/HfLaO TFTs so as to satisfy the requirements of next-generation technologies.

  6. Electrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology

    Science.gov (United States)

    Dentoni Litta, Eugenio; Hellström, Per-Erik; Henkel, Christoph; Östling, Mikael

    2014-08-01

    This work presents a characterization of the electrical properties of thulium silicate thin films, within the scope of a possible application as IL (interfacial layer) in scaled high-k/metal gate CMOS technology. Silicate formation is investigated over a wide temperature range (500-900 °C) through integration in MOS capacitor structures and analysis of the resulting electrical properties. The results are compared to those obtained from equivalent devices integrating lanthanum silicate interfacial layers. The thulium silicate IL is formed through a gate-last CMOS-compatible process flow, providing IL EOT of 0.1-0.3 nm at low formation temperature and interface state density at flatband condition below 2 × 1011 cm-2 eV-1. The effects of a possible integration in a gate-first process flow with a maximum thermal budget of 1000 °C are also evaluated, achieving an IL EOT of 0.2-0.5 nm, an interface state density at flatband condition ∼1 × 1011 cm-2 eV-1 and a reduction in gate leakage current density of one order of magnitude compared to the same stack without IL.

  7. Square-wave anodic-stripping voltammetric determination of Cd, Pb, and Cu in a hydrofluoric acid solution of siliceous spicules of marine sponges (from the Ligurian Sea, Italy, and the Ross Sea, Antarctica)

    Energy Technology Data Exchange (ETDEWEB)

    Truzzi, C.; Annibaldi, A.; Illuminati, S.; Bassotti, E.; Scarponi, G. [Polytechnic University of Marche, Ancona (Italy). Department of Marine Science

    2008-09-15

    Square-wave anodic-stripping voltammetry (SWASV) was set up and optimized for simultaneous determination of cadmium, lead, and copper in siliceous spicules of marine sponges, directly in the hydrofluoric acid solution ({proportional_to}0.55 mol L{sup -1} HF, pH {proportional_to}1.9). A thin mercury-film electrode (TMFE) plated on to an HF-resistant epoxy-impregnated graphite rotating-disc support was used. The optimum experimental conditions, evaluated also in terms of the signal-to-noise ratio, were as follows: deposition potential -1100 mV vs. Ag/AgCl, KCl 3 mol L{sup -1}, deposition time 3-10 min, electrode rotation 3000 rpm, SW scan from -1100 mV to +100 mV, SW pulse amplitude 25 mV, frequency 100 Hz, {delta}E{sub step} 8 mV, t{sub step} 100 ms, t{sub wait} 60 ms, t{sub delay} 2 ms, t{sub meas} 3 ms. Under these conditions the metal peak potentials were Cd -654{+-}1 mV, Pb -458 {+-} 1 mV, Cu -198{+-}1 mV. The electrochemical behaviour was reversible for Pb, quasi-reversible for Cd, and kinetically controlled (possibly following chemical reaction) for Cu. The linearity of the response with concentration was verified up to {proportional_to}4 {mu}g L{sup -1} for Cd and Pb and {proportional_to}20 {mu}g L{sup -1} for Cu. The detection limits were 5.8 ng L{sup -1}, 3.6 ng L{sup -1}, and 4.3 ng L{sup -1} for Cd, Pb, and Cu, respectively, with t{sub d}=5 min. The method was applied for determination of the metals in spicules of two specimens of marine sponges (Demosponges) from the Portofino natural reserve (Ligurian Sea, Italy, Petrosia ficiformis) and Terra Nova Bay (Ross Sea, Antarctica, Sphaerotylus antarcticus). The metal contents varied from tens of ng g{sup -1} to {proportional_to}1 {mu}g g{sup -1}, depending on the metal considered and with significant differences between the two sponge species. (orig.)

  8. Optical Properties of Astronomical Silicates in the Far-infrared

    Science.gov (United States)

    Rinehart, Stephen A,; Benford, Dominic J.; Dwek, Eli; Henry, Ross M.; Nuth, Joseph A., III; Silverberg, Robert f.; Wollack, Edward J.

    2008-01-01

    Correct interpretation of a vast array of astronomical data relies heavily on understanding the properties of silicate dust as a function of wavelength, temperature, and crystallinity. We introduce the QPASI-T (Optical Properties of Astronomical Silicates with Infrared Techniques) project to address the need for high fidelity optical characterization data on the various forms of astronomical dust. We use two spectrometers to provide extinction data for silicate samples across a wide wavelength range (from the near infrared to the millimeter). New experiments are in development that will provide complementary information on the emissivity of our samples, allowing us to complete the optical characterization of these dust materials. In this paper, we present initial results from several materials including amorphous iron silicate, magnesium silicate and silica smokes, over a wide range of temperatures, and discuss the design and operation of our new experiments.

  9. Organic modification of layered silicates. Structural and thermal characterizations

    Energy Technology Data Exchange (ETDEWEB)

    Prado, L.A.S. de A.; Schulte, K. [Polymer Composites, Denickstrasse 15, TU Hamburg-Harburg, D-21073 Hamburg (Germany); Karthikeyan, C.S.; Nunes, S.P. [Institute of Chemistry, GKSS Research Centre, Max-Planck Strasse 1, D-21502 Geesthacht (Germany); De Torriani, Iris L. [Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas, Cidade Universitaria Zeferino Vaz, CEP 13083-970, Campinas-SP (Brazil)

    2005-05-01

    Organic modification of natural and synthetic layered silicates namely montmorillonite and laponite is reported in this work. The modified silicates are being subsequently used in the preparation of nano-composite membranes based on ionomers for fuel cells application. Laponite, an entirely synthetic silicate, was modified using organosiloxanes containing imidazole groups. Two different strategies were adopted for modification: (a) swelling of the silicate in 2-butanone followed by functionalization using the siloxane at room temperature, (b) direct reaction between laponite and the organosiloxane in xylene at 120{sup o}C. Montmorillonite, a natural silicate, was supplied in the alkyl-ammonium form containing -OH groups. The modification of this silicate was conducted following the procedure (b). The structures of both plain and modified silicates were investigated by XRD showing that the interlayer distance (around 17A) was not affected during the functionalization of laponite. However, a noticeable increase in the interlayer distance from 18.0A to 24.5A was observed for the modified montmorillonite. This clearly shows the presence of polysiloxane chains in between the silicate layers. Further characterization showed that the modification of these silicates was in the range between 16% and 23% (molar percentage). TGA was done between 25 and 300{sup o}C in order to study the thermal degradation pattern of the silicates. The amount of adsorbed water could be determined from the results. The functionalization reduced the adsorption of water from 13.5% to 6.8% for laponite and from 8.5% to 4% for montmorillonite.

  10. Disordered Silicates in Space: a Study of Laboratory Spectra of "Amorphous" Silicates

    CERN Document Server

    Speck, Angela K; Hofmeister, Anne M

    2011-01-01

    We present a laboratory study of silicate glasses of astrophysically relevant compositions including olivines, pyroxenes and melilites. With emphasis on the classic Si-O stretching feature near 10 microns, we compare infrared spectra of our new samples with laboratory spectra on ostensibly similar compositions, and also with synthetic silicate spectral data commonly used in dust modeling. Several different factors affect spectral features including sample chemistry (e.g., polymerization, Mg/Fe ratio, oxidation state and Al-content) and different sample preparation techniques lead to variations in porosity, density and water content. The convolution of chemical and physical effects makes it difficult to attribute changes in spectral parameters to any given variable. It is important that detailed chemical and structural characterization be provided along with laboratory spectra. In addition to composition and density, we measured the glass transition temperatures for the samples which place upper limits on the ...

  11. Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties

    Science.gov (United States)

    Zarubin, Sergei; Suvorova, Elena; Spiridonov, Maksim; Negrov, Dmitrii; Chernikova, Anna; Markeev, Andrey; Zenkevich, Andrei

    2016-11-01

    Since the discovery of ferroelectricity (FE) in HfO2-based thin films, they are gaining increasing attention as a viable alternative to conventional FE in the next generation of non-volatile memory devices. In order to further increase the density of elements in the integrated circuits, it is essential to adopt a three-dimensional design. Since atomic layer deposition (ALD) processes are extremely conformal, ALD is the favored approach in the production of 3D ferroelectric random access memory. Here, we report the fabrication of fully ALD-grown capacitors comprising a 10-nm-thick FE Hf0.5Zr0.5O2 layer sandwiched between TiN electrodes, which are subjected to a detailed investigation of the structural and functional properties. The robust FE properties of Hf0.5Zr0.5O2 films in capacitors are established by several alternative techniques. We demonstrate a good scalability of TiN/Hf0.5Zr0.5O2/TiN FE capacitors down to 100-nm size and the polarization retention in the test "one transistor-one capacitor" (1T-1C) cells after 1010 writing cycles. The presence of a non-centrosymmetric orthorhombic phase responsible for FE properties in the alloyed polycrystalline Hf0.5Zr0.5O2 films is established by transmission electron microscopy. Given the ability of the ALD technique to grow highly conformal films and multilayered structures, the obtained results indicate the route for the design of FE non-volatile memory devices in 3D integrated circuits.

  12. Interstellar Silicate Dust in the z=0.89 Absorber Towards PKS 1830-211: Crystalline Silicates at High Redshift?

    CERN Document Server

    Aller, Monique C; York, Donald G; Vladilo, Giovanni; Welty, Daniel E; Som, Debopam

    2012-01-01

    We present evidence of a >10-sigma detection of the 10 micron silicate dust absorption feature in the spectrum of the gravitationally lensed quasar PKS 1830-211, produced by a foreground absorption system at redshift 0.886. We have examined more than 100 optical depth templates, derived from both observations of Galactic and extragalactic sources and laboratory measurements, in order to constrain the chemical structure of the silicate dust. We find that the best fit to the observed absorption profile is produced by laboratory crystalline olivine, with a corresponding peak optical depth of tau_10=0.27+/-0.05. The fit is slightly improved upon by including small contributions from additional materials such as silica, enstatite, or serpentine, which suggests that the dust composition may consist of a blend of crystalline silicates. Combining templates for amorphous and crystalline silicates, we find that the fraction of crystalline silicates needs to be at least 95%. Given the rarity of extragalactic sources wit...

  13. Fi rst-principles study of electronic structure,optical and elastic properties of BaHfO3 nanofilms%BaHfO3纳米薄膜电子结构、光学和弹性性质的第一性原理研究

    Institute of Scientific and Technical Information of China (English)

    顾芳; 陈云云; 李敏; 张加宏

    2014-01-01

    采用基于密度泛函理论的第一性原理方法,在局域密度近似(LDA )下研究了厚度为0.626~2.711nm (100)面BaHfO3薄膜的电子结构、光学和弹性性质.电子结构和光学性质计算结果表明:以BaO为表面层原子的BaHfO3纳米薄膜均为直接带隙半导体材料,带隙随薄膜厚度减小而逐渐减小,表现出明显的量子尺寸效应,此时薄膜的光学吸收边发生红移,吸收带出现窄化现象.以 HfO2作为表面层原子的BaHfO3薄膜则属于间接带隙半导体材料,且带隙随薄膜厚度减小而微弱增加.弹性性质计算结果表明:体弹模量、剪切模量和杨氏模量等表征材料硬度的力学参数均随BaHfO3纳米薄膜厚度减小而显著减小,呈现尺寸效应.电荷密度分布分析揭示了薄膜厚度改变了BaHfO3纳米薄膜的价键特性,这是材料硬度改变的内在原因.该研究结果为BaHfO3纳米薄膜材料的设计与应用提供了理论依据.%The electronic structure ,optical and elastic properties of the (100) surface of BaHfO3 nano-films in large thickness range of 0.626~2.711nm were investigated by first-principles calculations based on density functional theory with the localized density approximation (LDA ) .The calculated results of the electronic structure and optical properties indicate that BaHfO3 nanofilms with BaO termination are direct-band-gap semiconductors , and as the film thickness decreases , the band gap decreases , w hich show nanofilms have obvious quantum size effect ,and then red shift of the optical absorption edge is ob-served in the absorption spectra of BaHfO3 nanofilms ,accompanying with the narrowing of the absorp-tion band .However ,BaHfO3 nanofilms with HfO2 termination are indirect-band-gap semiconductors , and the band gap slightly increases with the film thickness decreases .The calculated results of the elas-tic properties show that bulk modulus ,shear modulus and Young

  14. INTERSTELLAR SILICATE DUST IN THE z = 0.89 ABSORBER TOWARD PKS 1830-211: CRYSTALLINE SILICATES AT HIGH REDSHIFT?

    Energy Technology Data Exchange (ETDEWEB)

    Aller, Monique C.; Kulkarni, Varsha P.; Som, Debopam [Department of Physics and Astronomy, University of South Carolina, 712 Main Street, Columbia, SC 29208 (United States); York, Donald G.; Welty, Daniel E. [Department of Astronomy and Astrophysics, University of Chicago, 5640 S. Ellis Ave., Chicago, IL 60637 (United States); Vladilo, Giovanni, E-mail: ALLERM@mailbox.sc.edu [Osservatorio Astonomico di Trieste, Via Tiepolo 11, 34143 Trieste (Italy)

    2012-03-20

    We present evidence of a >10{sigma} detection of the 10 {mu}m silicate dust absorption feature in the spectrum of the gravitationally lensed quasar PKS 1830-211, produced by a foreground absorption system at redshift 0.886. We have examined more than 100 optical depth templates, derived from both observations of Galactic and extragalactic sources and laboratory measurements, in order to constrain the chemical structure of the silicate dust. We find that the best fit to the observed absorption profile is produced by laboratory crystalline olivine, with a corresponding peak optical depth of {tau}{sub 10} = 0.27 {+-} 0.05. The fit is slightly improved upon by including small contributions from additional materials, such as silica, enstatite, or serpentine, which suggests that the dust composition may consist of a blend of crystalline silicates. Combining templates for amorphous and crystalline silicates, we find that the fraction of crystalline silicates needs to be at least 95%. Given the rarity of extragalactic sources with such a high degree of silicate crystallinity, we also explore the possibility that the observed spectral features are produced by amorphous silicates in combination with other molecular or atomic transitions, or by foreground source contamination. While we cannot rule out these latter possibilities, they lead to much poorer profile fits than for the crystalline olivine templates. If the presence of crystalline interstellar silicates in this distant galaxy is real, it would be highly unusual, given that the Milky Way interstellar matter contains essentially only amorphous silicates. It is possible that the z = 0.886 absorber toward PKS 1830-211, well known for its high molecular content, has a unique star-forming environment that enables crystalline silicates to form and prevail.

  15. Power-Stepped HF Cross Modulation Experiments at HAARP

    Science.gov (United States)

    Greene, S.; Moore, R. C.; Langston, J. S.

    2013-12-01

    High frequency (HF) cross modulation experiments are a well established means for probing the HF-modified characteristics of the D-region ionosphere. In this paper, we apply experimental observations of HF cross-modulation to the related problem of ELF/VLF wave generation. HF cross-modulation measurements are used to evaluate the efficiency of ionospheric conductivity modulation during power-stepped modulated HF heating experiments. The results are compared to previously published dependencies of ELF/VLF wave amplitude on HF peak power. The experiments were performed during the March 2013 campaign at the High Frequency Active Auroral Research Program (HAARP) Observatory. HAARP was operated in a dual-beam transmission format: the first beam heated the ionosphere using sinusoidal amplitude modulation while the second beam broadcast a series of low-power probe pulses. The peak power of the modulating beam was incremented in 1-dB steps. We compare the minimum and maximum cross-modulation effect and the amplitude of the resulting cross-modulation waveform to the expected power-law dependence of ELF/VLF wave amplitude on HF power.

  16. Atomic layer deposition of nanolaminate oxide films on Si

    Science.gov (United States)

    Tallarida, M.; Weisheit, M.; Kolanek, K.; Michling, M.; Engelmann, H. J.; Schmeisser, D.

    2011-11-01

    Among the methods for depositing thin films, atomic layer deposition is unique for its capability of growing conformal thin films of compounds with a control of composition and thickness at the atomic level. The conformal growth of thin films can be of particular interest for covering nanostructures since it assures the homogeneous growth of the ALD film in all directions, independent of the position of the sample with respect to the incoming precursor flow. Here we describe the technique for growing the HfO2/Al2O3 bilayer on Si substrate and our in situ approach for its investigation by means of synchrotron radiation photoemission. In particular, we study the interface interactions between the two oxides for various thickness compositions ranging from 0.4 to 2.7 nm. We find that the ALD of HfO2 on Si induces the increase of the interfacial SiO2 layer, and a change in the band bending of Si. On the contrary, the ALD of Al2O3 on HfO2 shows negligible interaction between layers as the binding energies of Hf4f, Si2p, and O1s core level peaks and the valence band maximum of HfO2 do not change and the interfacial SiO2 does not increase.

  17. Mantle Origin of Silicic Calc-alkaline Basalts to Andesites in the Central Mexican Volcanic Belt

    Science.gov (United States)

    Straub, S. M.; Zellmer, G. F.; Gómez-Tuena, A.; Stuart, F.; Espinasa-Perena, R.; Cai, Y.

    2011-12-01

    The Quaternary central Mexican Volcanic Belt, constructed on ~50 km thick continental crust, erupts a broad spectrum of basaltic to dacitic calc-alkaline magmas with the arc-typical high ratios of large-ion lithophile to high-field strength elements. In order to understand their genesis, we investigated high-Mg# olivine-phyric calc-alkaline basalts to andesites from Holocene monogenetic volcanoes Tuxtepec (50.2 wt% SiO2; 9.7 wt% MgO), Yecahuazac (53.1;8.0), Suchiooc Cone (53.2;9.2), Guespalapa (54.4-61.2;5.3-7.9) and Cuatepel (55.6-58.9;5.4-7.5), and as well as one basaltic andesite from composite volcano Popocateptl (56.7;6.9). The high 3He/4He (7.3 ± 0.3 Ra; n=16) of olivine phenocrysts that crystallize at upper crustal levels, and the limited range of Sr-Nd-Hf isotope ratios preclude any significant crustal contamination of these magmas. Moreover, small, but significant differences in Sr-Nd-Hf isotope ratios and the variations of olivine phenocrysts in the Fo-Ni space conclusively rule out that these magmas were related through fractional crystallization. Consequently, the basaltic to andesitic magmas must originate from the sub-arc mantle. Building on the high-Ni content of the olivines that by far exceed Ni abundances of olivines in partial melts of peridotite, we propose that the subarc MVB mantle contains segregations of silica-excess and silica-deficient 'reaction pyroxenites' that formed through infiltration of highly reactive silicic fluids or melts from slab. Upon melting, the pyroxenites produce dacitic and basaltic initial melts, respectively, that mix in variable proportions during ascent through mantle and crust. This genetic model links the silica enrichment of the arc magmas directly to the silica flux from slab, with no requirement for any significant melt silica increase in the overlying crust.

  18. Behavior of calcium silicate hydrate in aluminate solution

    Institute of Scientific and Technical Information of China (English)

    LI Xiao-bin; ZHAO Zhuo; LIU Gui-hua; ZHOU Qiu-sheng; PENG Zhi-hong

    2005-01-01

    Using calcium hydroxide and sodium silicate as starting materials, two kinds of calcium silicate hydrates, CaO · SiO2 · H2O and 2CaO · SiO2 · 1.17H2O, were hydro-thermally synthesized at 120 ℃. The reaction rule of calcium silicate hydrate in aluminate solution was investigated. The result shows that CaO · SiO2 · H2O is more stable than 2CaO · SiO2 · 1.17H2 O in aluminate solution and its stability increases with the increase of reaction temperature but decreases with the increase of caustic concentration. The reaction between calcium silicate hydrate and aluminate solution is mainly through two routes. In the first case, Al replaces partial Si in calcium silicate hydrate, meanwhile 3CaO · Al2 O3 · xSiO2 · (6-2x) H2 O (hydro-garnet) is formed and some SiO2 enters the solution. In the second case, calcium silicate hydrate can react directly with aluminate solution, forming hydro-garnet and Na2O · Al2O3 · 2SiO2 · nH2O (DSP). The desilication reaction of aluminate solution containing silicate could contribute partially to forming DSP.

  19. Deep ocean biogeochemistry of silicic acid and nitrate

    Science.gov (United States)

    Sarmiento, J. L.; Simeon, J.; Gnanadesikan, A.; Gruber, N.; Key, R. M.; Schlitzer, R.

    2007-03-01

    Observations of silicic acid and nitrate along the lower branch of the global conveyor belt circulation show that silicic acid accumulation by diatom opal dissolution occurs at 6.4 times the rate of nitrate addition by organic matter remineralization. The export of opal and organic matter from the surface ocean occurs at a Si:N mole ratio that is much smaller than this almost everywhere (cf. Sarmiento et al., 2004). The preferential increase of silicic acid over nitrate as the deep circulation progresses from the North Atlantic to the North Pacific is generally interpreted as requiring deep dissolution of opal together with shallow remineralization of organic matter (Broecker, 1991). However, Sarmiento et al. (2004) showed that the primary reason for the low silicic acid concentration of the upper ocean is that the waters feeding the main thermocline from the surface Southern Ocean are depleted in silicic acid relative to nitrate. By implication, the same Southern Ocean processes that deplete the silicic acid in the surface Southern Ocean must also be responsible for the enhanced silicic acid concentration of the deep ocean. We use observations and results from an updated version of the adjoint model of Schlitzer (2000) to confirm that this indeed the case.

  20. The shape and composition of interstellar silicate grains

    CERN Document Server

    Min, M; De Koter, A; Hovenier, J W; Keller, L P; Markwick-Kemper, F

    2006-01-01

    We investigate the composition and shape distribution of silicate dust grains in the interstellar medium. The effect of the amount of magnesium in the silicate lattice is studied. We fit the spectral shape of the interstellar 10 mu extinction feature as observed towards the galactic center. We use very irregularly shaped coated and non-coated porous Gaussian Random Field particles as well as a statistical approach to model shape effects. For the dust materials we use amorphous and crystalline silicates with various composition and SiC. The results of our analysis of the 10 mu feature are used to compute the shape of the 20 mu silicate feature and to compare this with observations. By using realistic particle shapes we are, for the first time, able to derive the magnesium fraction in interstellar silicates. We find that the interstellar silicates are highly magnesium rich (Mg/(Fe+Mg)>0.9) and that the stoichiometry lies between pyroxene and olivine type silicates. This composition is not consistent with that o...

  1. Reagentless and calibrationless silicate measurement in oceanic waters.

    Science.gov (United States)

    Giraud, William; Lesven, Ludovic; Jońca, Justyna; Barus, Carole; Gourdal, Margaux; Thouron, Danièle; Garçon, Véronique; Comtat, Maurice

    2012-08-15

    Determination of silicate concentration in seawater without addition of liquid reagents was the key prerequisite for developing an autonomous in situ electrochemical silicate sensor (Lacombe et al., 2007) [11]. The present challenge is to address the issue of calibrationless determination. To achieve such an objective, we chose chronoamperometry performed successively on planar microelectrode (ME) and ultramicroelectrode (UME) among the various possibilities. This analytical method allows estimating simultaneously the diffusion coefficient and the concentration of the studied species. Results obtained with ferrocyanide are in excellent agreement with values of the imposed concentration and diffusion coefficient found in the literature. For the silicate reagentless method, successive chronoamperometric measurements have been performed using a pair of gold disk electrodes for both UME and ME. Our calibrationless method was tested with different concentrations of silicate in artificial seawater from 55 to 140×10(-6) mol L(-1). The average value obtained for the diffusion coefficient of the silicomolybdic complex is 2.2±0.4×10(-6) cm(2) s(-1), consistent with diffusion coefficient values of molecules in liquid media. Good results were observed when comparing known concentration of silicate with experimentally derived ones. Further work is underway to explore silicate determination within the lower range of oceanic silicate concentration, down to 0.1×10(-6) mol L(-1). Copyright © 2012 Elsevier B.V. All rights reserved.

  2. Carbonate-silicate melt immiscibility, REE mineralising fluids, and the evolution of the Lofdal Intrusive Suite, Namibia

    Science.gov (United States)

    Bodeving, Sarah; Williams-Jones, Anthony E.; Swinden, Scott

    2017-01-01

    The Lofdal Intrusive Suite, Namibia, consists of calcio-carbonatite and silica-undersaturated alkaline intrusive rocks ranging in composition from phono-tephrite to phonolite (and nepheline syenite). The most primitive of these rocks is the phono-tephrite, which, on the basis of its Y/Ho and Nb/Ta ratios, is interpreted to have formed by partial melting of the mantle. Roughly linear trends in major and trace element contents from phono-tephrite to phonolite and nepheline syenite indicate that the latter two rock types evolved from the phono-tephrite by fractional crystallisation. The nepheline syenite, however, has a lower rare earth element (REE) content than the phonolite. The carbonatite has a primitive mantle-normalised REE profile roughly parallel to that of the silica-undersaturated alkaline igneous rocks, although the absolute REE concentrations are higher. Like the phono-tephrite, it also has a mantle Y/Ho ratio. However, the Nb/Ta and Zr/Hf ratios are significantly higher. Moreover, the carbonatite displays strong negative Ta, Zr and Hf anomalies on spidergrams, whereas the silicate rocks display positive anomalies for these elements. Significantly, this behaviour is predicted by the corresponding carbonatite-silicate melt partition coefficients, as is the behaviour of the REE. Based on these observations, we interpret the carbonatite to represent an immiscible liquid that exsolved from the phono-tephrite or possibly the phonolite melt. The result was a calcio-carbonatite that is enriched in the heavy REE (HREE) relative to most other carbonatites. Fluids released from the corresponding magma are interpreted to have been the source of the REE mineralisation that is currently the target of exploration.

  3. Influence of sputtering pressure on the structural, optical and hydrophobic properties of sputtered deposited HfO{sub 2} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Dave, V. [Department of Electrical Engineering, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Dubey, P. [Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Gupta, H.O. [Department of Electrical Engineering, Indian Institute of Technology Roorkee, Roorkee 247667 (India); Chandra, R. [Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee 247667 (India)

    2013-12-31

    The aim of this work is to develop hydrophobic coatings for outdoor insulators using sputtering technique. Hafnium oxide is characterized by high dielectric constant, large band gap (5.6 eV), high refractive index (2.1) and good mechanical, thermal and chemical properties. Hence HfO{sub 2} is suitable as a protective coating for outdoor insulators used in the transmission line and transformers. Hafnium oxide coatings were deposited on glass substrates by DC magnetron sputtering technique at a sputtering pressure of 5 mTorr, 10 mTorr, 15 mTorr, 20 mTorr and 25 mTorr. The deposited films were characterized by techniques like X-ray diffraction (XRD), atomic force microscopy (AFM), water contact angle goniometry and UV–vis-NIR spectrophotometer. The average crystallite size calculated from XRD peaks shows that it increases with increase in sputtering pressure up to 15 mTorr and then it starts decreasing. The roughness calculated from AFM images shows the similar trend. The deposited films were found to be hydrophobic and transparent. The hydrophobicity of the films was correlated with the roughness calculated from AFM. The effect of sputtering pressure was also investigated on optical band gap and refractive index calculated from transmission and absorption data. The electrical resistivity was found to be high, thus ensuring insulating property of the deposited films. - Highlights: • Outdoor Insulators are suffering from environment pollution problem. • To mitigate problem, hydrophobic coating of HfO{sub 2} was synthesized by DC sputtering. • Effect of sputtering pressure was studied on structural, optical and hydrophobic properties of HfO{sub 2} • Optimum results were obtained at a sputtering pressure of 15 mTorr.

  4. HF dissociation in water clusters by computer simulations

    OpenAIRE

    Elena, Alin Marin

    2013-01-01

    We perform Restrained hybrid Monte Carlo simulations to compute the equilibrium constant of the dissociation reaction of HF in HF(H2O)7. We find that, like in the bulk, hydrofluoric acid, is a weak acid also in the cubic HF(H2O)7 cluster, and that its acidity is higher at lower T. This latter phenomenon has a (vibrational) entropic origin, namely it is due to the reduction of the (negative) T∆S contribution to the variation of free energy between the reactant and product. We found also ...

  5. Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

    Science.gov (United States)

    Tang, M. H.; Sun, Z. H.; Zhou, Y. C.; Sugiyama, Y.; Ishiwara, H.

    2009-05-01

    The metal-ferroelectric-insulator-semiconductor (MFIS) structure diodes with SrBi2Ta2O9 (SBT) as ferroelectric thin film and HfO2 as insulating buffer layer were fabricated. The electrical properties of MFIS structure were investigated for different HfO2 buffer layer thickness. The experimental results show that the memory window extended significantly as the HfO2 layer thickness increased from 6 to 10 nm. It is also observed that the leakage current was reduced to about 10-10 A at applied voltage of 4 V, and the high and low capacitances remained distinguishable for over 8 h even if we extrapolate the measured data to 10 years.

  6. High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition.

    Science.gov (United States)

    Chen, Zhe; Zhang, Feifei; Chen, Bing; Zheng, Yang; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

    2015-01-01

    Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.

  7. Functional substitution of coordination polyhedron in crystal structure of silicates

    Institute of Scientific and Technical Information of China (English)

    叶大年; 马哲生; 赫伟; 李哲; 施倪承; D.Pushcharovsky

    2002-01-01

    On the bases of the study of comparative crystal chemistry of silicates it has been concluded that the octahedra and square pyramids of Ti-0 and Zr-O play functional role of tetrahedra of Si-O in the construction of crystal structures. Therefore, those silicates may be named titano-and zircono-silicates. Because of the functional similarity of coordination polyhedra, the structures of cristobalite and feldspar have been compared with those of perovskite and garnet, respectively. As a new concept, the functional replacement of tetrahedra by octahedra and/or pyramids is defined by the authors of this paper for favorable comparison of relative crystal structures.

  8. Sensitized photoluminescence of erbium silicate synthesized on porous silicon framework

    Science.gov (United States)

    Shen, Hao; Xu, Lingbo; Li, Dongsheng; Yang, Deren

    2017-09-01

    Er silicate/porous silicon (PS) composites with effective sensitized erbium emission at 1.53 μm have been synthesized on the PS framework. Cross-sectional scanning electron microscopy and X-ray diffraction reveal that the PS is coated by Er silicate in composites. Indirect excitation of Er3+ ion luminescence via energy transfer from PS is confirmed. The temperature dependence of Er-related photoluminescence intensity and lifetime is investigated, which concludes a phonon-mediated energy transfer process. The combination of the PS framework and Er silicate provides a possible strategy for practical silicon-based light sources.

  9. Fire Resistance of Wood Impregnated with Soluble Alkaline Silicates

    Directory of Open Access Journals (Sweden)

    Carlos Alberto Giudice

    2007-01-01

    Full Text Available The aim of this paper is to determine the fire performance of wood panels (Araucaria angustifolia impregnated with soluble alkaline silicates. Commercial silicates based on sodium and potassium with 2.5/1.0 and 3.0/1.0 silica/alkali molar ratios were selected; solutions and glasses were previously characterized. Experimental panels were tested in a limiting oxygen chamber and in a two-foot tunnel. Results displayed a high fire-retardant efficiency using some soluble silicates.

  10. Journal of the Chinese Silicate Society (Selected Articles).

    Science.gov (United States)

    2014-09-26

    A-A157 497 JOURNAL OF THE CHINESE SILICATE SOCIETY (SELECTED i/i ARTICLES)(U) FOREIGN TECHNOLOGY DIV IWRIGHT-PRT RSON U CLSS..AFE OH 11 JUN 85...7 V- V 17 -, 7Z I T7. k. V.-.’.~. W ~ . FTD-ID(RS)T-0160-85 FOREIGN TECHNOLOGY DIVISION JOURNAL OF THE CHINESE SILICATE SOCIETY... JOURNAL OF THE CHINESE SILICATE SOCIETY D- At"Ibutilonf (Selected Articles) Availability Cadm English pages: 28 Dist ’Avail ald/zr Source: Guisuanyan

  11. Ionospheric heating with oblique HF waves

    Science.gov (United States)

    Field, Edward C., Jr.; Bloom, Ron M.

    1990-10-01

    Calculations of ionospheric electron density perturbations and ground-level signal changes produce by intense oblique high frequency (HF) transmitters are presented. This analysis considers radio field focusing at caustics, the consequent joule-heating of the surrounding plasma, heat conduction, diffusion, and recombination processes: these being the effects of a powerful oblique 'modifying' wave. It neglects whatever plasma instabilities might occur. Then effects on a secondary 'test' wave that is propagated along the same path as the first are investigated. Calculations predict ground-level field-strength reductions of several dB in the test wave for modifying waves having ERP in the 85 to 90 dBW range. These field-strength changes are similar in sign, magnitude, and location to ones measured in Soviet experiments. The results are sensitive to the model ionosphere assumed, so future experiments should employ the widest possible range of frequencies and propagation conditions. An effective power of 90 dBW seems to be a sort of threshold that, if exceeded, results in substantial rather than small signal changes. The conclusions are based solely on joule-heating and subsequent defocusing of waves passing through caustic regions.

  12. Process Simulation Analysis of HF Stripping

    Directory of Open Access Journals (Sweden)

    Thaer A. Abdulla

    2013-05-01

    Full Text Available    HYSYS process simulator is used for the analysis of existing HF stripping column in LAB plant (Arab Detergent Company, Baiji-Iraq. Simulated column performance and profiles curves are constructed. The variables considered are the thermodynamic model option, bottom temperature, feed temperature, and column profiles for the temperature, vapor flow rate, liquid flow rate and composition. The five thermodynamic models options used (Margules, UNIQUAC, van laar, Antoine, and Zudkevitch-Joffee, affecting the results within (0.1-58% variation for the most cases.        The simulated results show that about 4% of paraffin (C10 & C11 presents at the top stream, which may cause a problem in the LAB production plant. The major variations were noticed for the total top vapor flow rate with bottom temperature and with feed composition. The column profiles maintain fairly constants from tray 5 to tray 18. The study gives evidence about a successful simulation with HYSYS because the results correspond with the real plant operation data.

  13. The (178m2) Hf Controversy

    CERN Document Server

    Becker, J A; Schiffer, J P; Wilhelmy, J

    2003-01-01

    Since its discovery in the 1960's the sup 1 sup 7 sup 8 sup m sup 2 Hf isomer has garnered high attention from both the basic and applied communities in nuclear science. It's combination of high spin (16+), long half life (31 yrs), and high excitation energy (2.446 MeV) offer unique possibilities as an energy storage medium. Interest in the isomer was rekindled beginning in 1999 when a series of publications began to appear from a group (referred to here as the ''Texas collaboration'') primarily based at the University of Texas, Dallas [1]. They reported observations that some of the stored energy could be released (''triggered'') when the isomer was exposed to a fluence of photons in the energy range approx 10 to approx 60 keV. The implications of this observation are profound. Even though the claimed cross section for the process was approx 7 orders of magnitude greater than would be predicted from the known systematics of photon absorption by nuclei in this mass range [2], such a highly efficient method fo...

  14. Grindability of cast Ti-Hf alloys.

    Science.gov (United States)

    Kikuchi, Masafumi; Takahashi, Masatoshi; Sato, Hideki; Okuno, Osamu; Nunn, Martha E; Okabe, Toru

    2006-04-01

    As part of our systematic studies characterizing the properties of titanium alloys, we investigated the grindability of a series of cast Ti-Hf alloys. Alloy buttons with hafnium concentrations up to 40 mass% were made using an argon-arc melting furnace. Each button was cast into a magnesia-based mold using a dental titanium casting machine; three specimens were made for each metal. Prior to testing, the hardened surface layer was removed. The specimens were ground at five different speeds for 1 min at 0.98 N using a carborundum wheel on an electric dental handpiece. Grindability was evaluated as the volume of metal removed per minute (grinding rate) and the volume ratio of metal removed compared to the wheel material lost (grinding ratio). The data were analyzed using ANOVA. A trend of increasing grindability was found with increasing amounts of hafnium, although there was no statistical difference in the grindability with increasing hafnium contents. We also found that hafnium may be used to harden or strengthen titanium without deteriorating the grindability.

  15. Early Earth differentiation processes investigated through the short-lived 146Sm-142Nd and 182Hf-182W isotope systems

    Science.gov (United States)

    Rizo Garza, H. L.; Walker, R. J.; Carlson, R.; Touboul, M.; Horan, M. F.; Puchtel, I. S.; Boyet, M.; Rosing, M. T.

    2016-12-01

    The earliest history of Earth is difficult to capture due to the scarcity and high degrees of alteration of ancient terrains. Nevertheless, short-lived isotope systems can provide important constraints on early geological processes. The 182Hf-182W (t1/2 = 8.9 Ma) and 146Sm-142Nd (t1/2=103 Ma) systems are variably sensitive to differentiation processes that occurred during the first 50 Ma and 500 Ma of Earth's history, respectively. Eoarchean mantle-derived rocks from the Isua supracrustal belt (southwest Greenland) show well-resolved anomalies in both 182W (+5 to +21 ppm) and 142Nd (-10 to +15 ppm) compared to terrestrial standards. While there is evidence that W was mobilized in the crust accessed by the Isua suite, W and Nd isotopic anomalies are interpreted to primarily reflect Hadean processes that affected the mantle precursors of these rocks. Variations in 142Nd do not correlate with those of 182W, however, suggesting different mechanisms for the origin and retention of the isotopic anomalies present in these two systems. The 142Nd data, combined with 143Nd data for the long-lived 147Sm-143Nd system, are interpreted to reflect silicate crystal-liquid fractionation 4.3 Ga ago. Variations of 182W in the Isua lavas mantle source could also have been produced as a result of Hf/W fractionation caused by silicate differentiation during the lifetime of 182Hf, but these processes would have to somehow be decoupled from the processes that affected Sm/Nd. Alternatively, 182W variability could be the result of combined early Hf/W fractionations caused by metal-silicate segregation within discrete mantle domains and late accretion processes. Variations in 182W and 142Nd observed in the Isua supracrustal rocks are similar to those observed in the ancient rocks from Nuvvuagittuq Greenstone Belt, the Acasta Gneiss Complex, and the Saglek Block, suggesting that similar processes affected diverse early Earth rocks.

  16. Heterogeneous Earth Accretion and Incomplete Metal-Silicate Reequilibration at High Pressure During Core Formation

    Science.gov (United States)

    Rubie, D. C.; Mann, U.; Frost, D. J.; Kegler, P.; Holzheid, A.; Palme, H.

    2007-12-01

    We present a new model of core formation, based on the partitioning of siderophile elements, that involves accreting the Earth through a series of collisions with smaller bodies that had already differentiated at low pressure. Each impact results in a magma ocean in which the core of the impactor reequilibrates with silicate liquid at high pressure before merging with the Earth's protocore. The oxygen contents of the chondritic compositions of the proto-Earth and impactors can be varied. The compositions of coexisting metal and silicate are determined through mass balance combined with partitioning equations for Ni, FeO, Si and other siderophile elements. The oxygen fugacity is fixed by the partitioning of FeO and is a function of P, T and bulk oxygen content. An important constraint for core formation is that core-mantle partition coefficients for Ni and Co must both converge to values of 23-28. Based on a recent study of the partitioning of Ni and Co over a wide P-T range (Kegler et al., EPSL, submitted) together with other published data, this constraint is not satisfied by a single- stage core formation model at any conditions because the partition coefficients converge at values that are much too low. In the present multi-stage model, the correct values can be reached if only part of each impactor core reequilibrates with silicate liquid in the magma ocean (as proposed by previous models based on Hf-W isotope studies). Physically, this would mean that impactor cores fail to emulsify completely as they sink through the magma ocean. Incorporating other elements (e.g. V and Cr) in the model requires, in addition, that the bulk composition of the impactors changes during accretion from reduced (FeO-poor) to oxidised FeO-rich). Then, with the resulting increase in fO2, incomplete reequilibration of the cores during the final 20-30% of Earth accretion is required to satisfy the Ni-Co constraint. In addition, this model enables the concentrations of O and Si in the

  17. The magnetic properties of $^{\\rm 177}$Hf and $^{\\rm 180}$Hf in the strong coupling deformed model

    OpenAIRE

    Muto, S.; Stone, N. J.; Bingham, C. R.; STONE, J.R; Walker, P. M.; Audi, G.; Gaulard, C.; Köster, U.(Institut Laue-Langevin (ILL), Grenoble, France); Nikolov, J.; Nishimura,K; Ohtsubo, T.; Podolyak, Z.; Risegari, L.; Simpson, G.S.; Veskovic, M.

    2014-01-01

    This paper reports NMR measurements of the magnetic dipole moments of two high-K isomers, the 37/2$^-$, 51.4 m, 2740 keV state in $^{\\rm 177}$Hf and the 8$^-$, 5.5 h, 1142 keV state in $^{\\rm 180}$Hf by the method of on-line nuclear orientation. Also included are results on the angular distributions of gamma transitions in the decay of the $^{\\rm 177}$Hf isotope. These yield high precision E2/M1 multipole mixing ratios for transitions in bands built on the 23/2$^+$, 1.1 s, isomer at 1315 keV ...

  18. First-principles phase diagram calculations for the rocksalt-structure quasibinary systems TiN-ZrN, TiN-HfN and ZrN-HfN

    Science.gov (United States)

    Liu, Z. T. Y.; Burton, B. P.; Khare, S. V.; Gall, D.

    2017-01-01

    We have studied the phase equilibria of three ceramic quasibinary systems Ti1-x Zr x N, Ti1-x Hf x N and Zr1-x Hf x N (0  ⩽  x  ⩽  1) with density functional theory, cluster expansion and Monte Carlo simulations. We predict consolute temperatures (T C), at which miscibility gaps close, for Ti1-x Zr x N to be 1400 K, for Ti1-x Hf x N to be 700 K, and below 200 K for Zr1-x Hf x N. The asymmetry of the formation energy ΔE f(x) is greater for Ti1-x Hf x N than Ti1-x Zr x N, with less solubility on the smaller cation TiN-side, and similar asymmetries were predicted for the corresponding phase diagrams. We also analyzed different energetic contributions: ΔE f of the random solid solutions were decomposed into a volume change term, Δ {{E}\\text{vc}} , and a chemical exchange and relaxation term, Δ {{E}\\text{xc\\text{-rlx}}} . These two energies partially cancel one another. We conclude that Δ {{E}\\text{vc}} influences the magnitude of T C and Δ {{E}\\text{xc\\text{-rlx}}} influences the asymmetry of ΔE f(x) and phase boundaries. We also conclude that the absence of experimentally observed phase separation in Ti1-x Zr x N and Ti1-x Hf x N is due to slow kinetics at low temperatures. In addition, elastic constants and mechanical properties of the random solid solutions were studied with the special quasirandom solution approach. Monotonic trends, in the composition dependence, of shear-related mechanical properties, such as Vickers hardness between 18 to 23 GPa, were predicted. Trends for Ti1-x Zr x N and Ti1-x Hf x N exhibit down-bowing (convexity). It shows that mixing nitrides of same group transition metals does not lead to hardness increase from an electronic origin, but through solution hardening mechanism. The mixed thin films show consistency and stability with little phase separation, making them desirable coating choices.

  19. A thirty second isomer in {sup 171}Hf

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, P.; Billowes, J.; Cooper, T.G.; Grant, I.S.; Pearson, M.R.; Wheeler, P.D. [Schuster Laboratory, University of Manchester, M13 9PL (United Kingdom); Cochrane, E.C.A.; Cooke, J.L.; Evans, D.E.; Griffith, J.A.R.; Persson, J.R.; Richardson, D.S.; Tungate, G.; Zybert, L. [School of Physics and Space Research, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Dendooven, P.; Honkanen, A.; Huhta, M.; Oinonen, M.; Penttilae, H.; Aeystoe, J. [Accelerator Laboratory, University of Jyvaeskylae, PL 35 Jyvaeskylae SF-403 51 (Finland)

    1997-09-01

    An isomer has been detected in {sup 171}Hf with a half-life of T{sub 1/2} 29.5(9) s. The state was populated in the {sup 170}Yb({alpha},3n){sup 171m}Hf reaction at a beam energy of E{sub {alpha}} = 50 MeV in an on-line ion guide isotope separator. The isomeric {sup 171m}Hf{sup +} beam was extracted from the ion guide, mass-analysed and implanted in the surface of a microchannel-plate. The half-life of the collected activity was measured from the decay of the microchannel-plate count rate. We associate the isomer with the first excited state in {sup 171}Hf with spin 1/2{sup -} at an excitation energy of 22(2) keV. (author)

  20. HF fiber stuffing in building 186 at CERN

    CERN Multimedia

    Tiziano Camporesi

    2003-01-01

    Each of the 36 HF wedges comprise ca 12000 quartz fibers which are the active element of the calorimeter. The fibers are produced by Polymicro (USA), cleaved and bundled at KFKI, Budapest, Hungary and inserted at CERN.

  1. Low-Frequency Waves in HF Heating of the Ionosphere

    Science.gov (United States)

    Sharma, A. S.; Eliasson, B.; Milikh, G. M.; Najmi, A.; Papadopoulos, K.; Shao, X.; Vartanyan, A.

    2016-02-01

    Ionospheric heating experiments have enabled an exploration of the ionosphere as a large-scale natural laboratory for the study of many plasma processes. These experiments inject high-frequency (HF) radio waves using high-power transmitters and an array of ground- and space-based diagnostics. This chapter discusses the excitation and propagation of low-frequency waves in HF heating of the ionosphere. The theoretical aspects and the associated models and simulations, and the results from experiments, mostly from the HAARP facility, are presented together to provide a comprehensive interpretation of the relevant plasma processes. The chapter presents the plasma model of the ionosphere for describing the physical processes during HF heating, the numerical code, and the simulations of the excitation of low-frequency waves by HF heating. It then gives the simulations of the high-latitude ionosphere and mid-latitude ionosphere. The chapter also briefly discusses the role of kinetic processes associated with wave generation.

  2. Near-infrared LIF spectroscopy of HfF

    CERN Document Server

    Grau, Matt; Loh, Huanqian; Sinclair, Laura C; Stutz, Russel P; Yahn, Tylser S; Cornell, Eric A

    2012-01-01

    The molecular ion HfF$^+$ is the chosen species for a JILA experiment to measure the electron electric dipole moment (eEDM). Detailed knowledge of the spectrum of HfF is crucial to prepare HfF$^+$ in a state suitable for performing an eEDM measurement\\cite{Leanhardt}. We investigated the near-infrared electronic spectrum of HfF using laser-induced fluorescence (LIF) of a supersonic molecular beam. We discovered eight unreported bands, and assign each of them unambiguously, four to vibrational bands belonging to the transition $[13.8]0.5 \\leftarrow X1.5$, and four to vibrational bands belonging to the transition $[14.2]1.5 \\leftarrow X1.5$. Additionally, we report an improved measurement of vibrational spacing of the ground state, as well as anharmonicity $\\omega_e x_e$.

  3. Theoretical Assessment of 178m2Hf De-Excitation

    Energy Technology Data Exchange (ETDEWEB)

    Hartouni, E P; Chen, M; Descalle, M A; Escher, J E; Loshak, A; Navratil, P; Ormand, W E; Pruet, J; Thompson, I J; Wang, T F

    2008-10-06

    This document contains a comprehensive literature review in support of the theoretical assessment of the {sup 178m2}Hf de-excitation, as well as a rigorous description of controlled energy release from an isomeric nuclear state.

  4. Integrated magnetics design for HF-link power converters

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper deals with the design of integrated magnetics for HF-link converters, where the integrated magnetic components do not necessarily belong to the same voltage loop. Depending on the specific HF-link converter topology, the proposed integrated magnetics can either alleviate the derivation...... of independent auxiliary supply voltages from the main transformer or integrate other magnetic structures, thus saving board space and cutting costs....

  5. Integrated magnetics design for HF-link power converters

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper deals with the design of integrated magnetics for HF-link converters, where the two integrated magnetic components on the same core do not necessarily belong to the same voltage loop. Depending on the specific HF-link converter topology, the proposed integrated magnetics can either alleviate the derivation of independent auxiliary supply voltages from the main transformer or integrate other magnetic structures, thus saving board space and cutting costs. (au)

  6. Film Reviews.

    Science.gov (United States)

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  7. Viscosity model for fully liquid silicate melt

    Directory of Open Access Journals (Sweden)

    Zhang Guo-Hua

    2012-01-01

    Full Text Available A model for estimating the viscosity of silicate melt as derived in our previous paper is extended to the system containing MgO, CaO, SrO, BaO, Li2O, Na2O, K2O, which can express the nonlinear variation of activation energy of viscosity with the composition. It is found that the optimized parameters of model which characterize the deforming ability of bonds around non-bridging oxygen decrease with increasing the bond strength of M-O bond expressed by I=2Q/RMz+ + rO2-2 (where Q is the valence of cation M; r is the radius. It is pointed out that viscosity is not only determined by the bond strength, but also by the radius of cation which is defined as the size effect. The radius of cation plays paradox roles in the two factors: smaller radius leads to a stronger bond, thus a higher viscosity; while cations with smaller radius are easier to diffuse when neglecting the interaction force, thus a lower viscosity will be.

  8. Nanostructure of Er3+ doped silicates.

    Science.gov (United States)

    Yao, Nan; Hou, Kirk; Haines, Christopher D; Etessami, Nathan; Ranganathan, Varadh; Halpern, Susan B; Kear, Bernard H; Klein, Lisa C; Sigel, George H

    2005-06-01

    We demonstrate nanostructural evolution resulting in highly increased photoluminescence in silicates doped with Er3+ ions. High-resolution transmission electron microscopy (HRTEM) imaging, nano-energy dispersed X-ray (NEDX) spectroscopy, X-ray diffraction (XRD) and photoluminescence analysis confirm the local composition and structure changes of the Er3+ ions upon thermal annealing. We studied two types of amorphous nanopowder: the first is of the composition SiO2/18Al2O3/2Er2O3 (SAE), synthesized by combustion flame-chemical vapor condensation, and the second is with a composition of SiO2/8Y2O3/2Er2O3 (SYE), synthesized by sol-gel synthesis (composition in mol%). Electron diffraction and HRTEM imaging clearly show the formation of nanocrystallites with an average diameter of approximately 8 nm in SAE samples annealed at 1000 degrees C and SYE samples annealed at 1200 degrees C. The volume fraction of the nanocrystalline phase increased with each heat treatment, eventually leading to complete devitrification at 1400 degrees C. Further XRD and NEDX analysis indicates that the nanocrystalline phase has the pyrochlore structure with the formula Er(x)Al(2-x)Si2O7 or Er(x)Y(2-x)Si2O7 and a surrounding silica matrix.

  9. Silicate Urolithiasis during Long-Term Treatment with Zonisamide

    Directory of Open Access Journals (Sweden)

    Satoru Taguchi

    2013-01-01

    Full Text Available Silicate urinary calculi are rare in humans, with an incidence of 0.2% of all urinary calculi. Most cases were related to excess ingestion of silicate, typically by taking magnesium trisilicate as an antacid for peptic ulcers over a long period of time; however, there also existed unrelated cases, whose mechanism of development remains unclear. On the other hand, zonisamide, a newer antiepileptic drug, is one of the important causing agents of iatrogenic urinary stones in patients with epilepsy. The supposed mechanism is that zonisamide induces urine alkalinization and then promotes crystallization of urine components such as calcium phosphate by inhibition of carbonate dehydratase in renal tubular epithelial cells. Here, we report a case of silicate urolithiasis during long-term treatment with zonisamide without magnesium trisilicate intake and discuss the etiology of the disease by examining the silicate concentration in his urine.

  10. Properties of sodium silicate bonded sand hardened by microwave heating

    Institute of Scientific and Technical Information of China (English)

    Wang Jina; Fan Zitian; Zan Xiaolei; Pan Di

    2009-01-01

    The sodium silicate bonded sand hardened by microwave heating has many advantages,such as low sodium silicate adding quantity,fast hardening speed,high room temperature strength,good collapsibility and certain surface stability. However,it has big moisture absorbability in the air,which would lead to the compression strength and the surface stability of the sand molds being sharply reduced. In this study,the moisture absorbability of the sodium silicate bonded sand hardened by microwave heating in different humidity conditions and the effect factors were investigated. Meanwhile,the reasons for the big moisture absorbability of the sand were analyzed.Some measures to overcome the problems of high moisture absorbability,bad surface stability and sharply reducing strength in the air were discussed. The results of this study establish the foundation of green and clean foundry technology based on the microwave heating hardening sodium silicate sand process.

  11. Polymer/layered silicates nanocomposites for barrier technology

    CSIR Research Space (South Africa)

    Labuschagne, Philip W

    2012-02-01

    Full Text Available -1 Intelligent Nanomaterials: Processes, Properties, and Applications February 2012/Chapter 13 Polymer/layered silicates nanocomposites for barrier technology Labuschagne, PW, Moolman, S and Maity, A. Corresponding author: PLabusch...

  12. Characterization of iron-phosphate-silicate chemical garden structures.

    Science.gov (United States)

    Barge, Laura M; Doloboff, Ivria J; White, Lauren M; Stucky, Galen D; Russell, Michael J; Kanik, Isik

    2012-02-28

    Chemical gardens form when ferrous chloride hydrate seed crystals are added or concentrated solutions are injected into solutions of sodium silicate and potassium phosphate. Various precipitation morphologies are observed depending on silicate and phosphate concentrations, including hollow plumes, bulbs, and tubes. The growth of precipitates is controlled by the internal osmotic pressure, fluid buoyancy, and membrane strength. Additionally, rapid bubble-led growth is observed when silicate concentrations are high. ESEM/EDX analysis confirms compositional gradients within the membranes, and voltage measurements across the membranes during growth show a final potential of around 150-200 mV, indicating that electrochemical gradients are maintained across the membranes as growth proceeds. The characterization of chemical gardens formed with iron, silicate, and phosphate, three important components of an early earth prebiotic hydrothermal system, can help us understand the properties of analogous structures that likely formed at submarine alkaline hydrothermal vents in the Hadean-structures offering themselves as the hatchery of life.

  13. The crystalline fraction of interstellar silicates in starburst galaxies

    CERN Document Server

    Kemper, F; Woods, Paul M

    2010-01-01

    We present a model using the evolution of the stellar population in a starburst galaxy to predict the crystallinity of the silicates in the interstellar medium of this galaxy. We take into account dust production in stellar ejecta, and amorphisation and destruction in the interstellar medium and find that a detectable amount of crystalline silicates may be formed, particularly at high star formation rates, and in case supernovae are efficient dust producers. We discuss the effect of dust destruction and amorphisation by supernovae, and the effect of a low dust-production efficiency by supernovae, and find that when taking this into account, crystallinity in the interstellar medium becomes hard to detect. Levels of 6.5-13% crystallinity in the interstellar medium of starburst galaxies have been observed and thus we conclude that not all these crystalline silicates can be of stellar origin, and an additional source of crystalline silicates associated with the Active Galactic Nucleus must be present.

  14. Spinning dust emission from ultrasmall silicates: emissivity and polarization spectrum

    CERN Document Server

    Hoang, Thiem; Lan, Nguyen Quynh

    2016-01-01

    Anomalous microwave emission (AME) is an important Galactic foreground of Cosmic Microwave Background (CMB) radiation. It is believed that the AME arises from rotational emission by spinning polycyclic aromatic hydrocarbons (PAHs) in the interstellar medium (ISM). In this paper, we assume that a population of ultrasmall silicate grains may exist in the ISM, and quantify rotational emissivity from these tiny particles and its polarization spectrum. We found that spinning silicate nanoparticles can produce strong rotational emission when those small grains follow a log-normal size distribution. The polarization fraction of spinning dust emission from tiny silicates increases with decreasing the dipole moment per atom ($\\beta$) and can reach $P\\sim 20\\%$ for $\\beta\\sim 0.1$D at grain temperature of 60 K. We identify a parameter space $(\\beta,Y_{Si})$ for silicate nanoparticles in which its rotational emission can adequately reproduce both the observed AME and the polarization of the AME, without violating the ob...

  15. Synthesis of freestanding HfO2 nanostructures

    Directory of Open Access Journals (Sweden)

    Boyle Kayla

    2011-01-01

    Full Text Available Abstract Two new methods for synthesizing nanostructured HfO2 have been developed. The first method entails exposing HfTe2 powders to air. This simple process resulted in the formation of nanometer scale crystallites of HfO2. The second method involved a two-step heating process by which macroscopic, freestanding nanosheets of HfO2 were formed as a byproduct during the synthesis of HfTe2. These highly two-dimensional sheets had side lengths measuring up to several millimeters and were stable enough to be manipulated with tweezers and other instruments. The thickness of the sheets ranged from a few to a few hundred nanometers. The thinnest sheets appeared transparent when viewed in a scanning electron microscope. It was found that the presence of Mn enhanced the formation of HfO2 by exposure to ambient conditions and was necessary for the formation of the large scale nanosheets. These results present new routes to create freestanding nanostructured hafnium dioxide. PACS: 81.07.-b, 61.46.Hk, 68.37.Hk.

  16. The isobutylene-isobutane alkylation process in liquid HF revisited.

    Science.gov (United States)

    Esteves, P M; Araújo, C L; Horta, B A C; Alvarez, L J; Zicovich-Wilson, C M; Ramírez-Solís, A

    2005-07-07

    Details on the mechanism of HF catalyzed isobutylene-isobutane alkylation were investigated. On the basis of available experimental data and high-level quantum chemical calculations, a detailed reaction mechanism is proposed taking into account solvation effects of the medium. On the basis of our computational results, we explain why the density of the liquid media and stirring rates are the most important parameters to achieve maximum yield of alkylate, in agreement with experimental findings. The ab initio Car-Parrinello molecular dynamics calculations show that isobutylene is irreversibly protonated in the liquid HF medium at higher densities, leading to the ion pair formation, which is shown to be a minimum on the potential energy surface after optimization using periodic boundary conditions. The HF medium solvates preferentially the fluoride anion, which is found as solvated [FHF](-) or solvated F(-.)(HF)(3). On the other hand, the tert-butyl cation is weakly solvated, where the closest HF molecules appear at a distance of about 2.9 Angstrom with the fluorine termination of an HF chain.

  17. Trace metal speciation and bioavailability in surface waters of the Black Sea coastal area evaluated by HF-PLM and DGT.

    Science.gov (United States)

    Slaveykova, Vera I; Karadjova, Irina B; Karadjov, Metody; Tsalev, Dimiter L

    2009-03-15

    Trace metal speciation in seawater from the Bulgarian Black Sea coast was studied in situ by hollow fiber permeation liquid membrane (HF-PLM) and by diffusion gradients in thin-film gels (DGT). The concentrations of Cd, Cu, Ni, and Pb determined by HF-PLM were lower than those measured by DGT, in agreement with their analytical windows, e.g., free metal ions provided by the HF-PLM and dynamic (mobile and labile) species by the DGT. The obtained suite of data was further used to evaluate the bioavailability of these metals to the microorganisms, which was then compared with experimental results of metal uptake to green microalga Chlorella salina. Uptake fluxes of the Cd, Cu, Ni, and Pb to C. salina, were predicted from the measured HF-PLM concentrations and laboratory experimentation in artificial seawater, in agreement with theoretical considerations. The HF-PLM and DGT appear to be promising analytical techniques for speciation and bioavailability studies in complex environmental media and allow improved understanding of the role of different chemical species in metal bioavailability (and impact) in seawaters.

  18. Evolution of the interfacial layer during the atomic layer deposition of HfO{sub 2} on Si/SiO{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Karavaev, Konstantin; Tallarida, Massimo; Schmeisser, Dieter [Brandenburgische Technische Universitaet, LS Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee, 17, 03046, Cottbus (Germany)

    2009-07-01

    We studied the formation of the interfacial layer in the Si/SiO{sub 2}/HfO{sub 2} system using the in-situ Atomic Layer Deposition (ALD) reactor developed in our group. We measured the X-ray photoelectron and X-ray absorption spectra with synchrotron radiation at the beamline U49-2/PGM2-BESSY II. The ALD growth was obtained using different Hf-precursors (HfCl{sub 4},TEMAHf and TDMAHf) on various prepared substrates at different temperatures. The investigation was carried out in-situ giving the possibility to determine the properties of the grown film after every ALD cycle without breaking the vacuum. We observed the evolution of the Si/SiO{sub 2}/HfO{sub 2} system during the formation of first three Hf-oxide layers, detecting the interfacial growth of SiO{sub 2} during the initial ALD cycles from the XPS spectra of Si2p. We discuss how the interfacial layer growth depends on the various ALD parameters.

  19. Band offsets in HfTiO/InGaZnO{sub 4} heterojunction determined by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    He, G., E-mail: ganghe01@issp.ac.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Lv, J.G., E-mail: jglv@hftc.edu.cn [School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601 (China); Fang, Z.B., E-mail: csfzb@usx.edu.cn [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Liu, Y.M.; Zhu, K.R.; Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

    2015-09-05

    Highlights: • Band offsets in HfTiO/InGaZnO{sub 4} heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE{sub v}) of sputter deposited HfTiO/InZnGaO{sub 4} (IGZO) heterostructures. A ΔE{sub v} value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure.

  20. Oscillatory magnetic anisotropy and spin-reorientation induced by heavy-metal cap in Cu/FeCo/M (M =Hf or Ta): A first-principles study

    Science.gov (United States)

    Ong, P. V.; Kioussis, Nicholas; Amiri, P. Khalili; Wang, K. L.

    2016-11-01

    Using ab initio electronic structure calculations we have investigated the effect of the thickness of a heavy-metal (HM) cap on the magnetic anisotropy of the Cu /FeCo /HM (n ) thin film where HM = Hf and Ta with thicknesses of n =0 -10 monolayers (MLs). We find that the Hf cap results in a large perpendicular magnetic anisotropy (PMA), which exhibits quasiperiodic oscillation with a period of two MLs. In contrast, the Ta-capped heterostructure exhibits a spin reorientation from out-of-plane to in-plane magnetization orientation at two MLs of Ta. Moreover, the MA remains negative and depends weakly on the Ta-cap thickness beyond the critical thickness. The underlying mechanism of the PMA oscillation is the periodic change in spin-flip spin-orbit coupling between the minority-spin Fe d (x z ,y z ) and majority Fe d (z2) at Γ ¯, which is induced by the hybridization with Hf at the FeCo/Hf interface. Our results help resolve the contradictory experiments regarding the role of the FeCo/Ta interface on the PMA of the MgO/FeCo/Ta junction. The calculations reveal that the ferromagnet/Hf is promising for spintronic applications and that the capping material and thickness are additional parameters for optimizing the functional properties of spintronic devices.

  1. Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Bhuyian, Md Nasir Uddin, E-mail: mnb3@njit.edu; Misra, D. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Poddar, S. [Department of Electronics and Communication Engineering, Heritage Institute of Technology, Kolkata (India); Tapily, K.; Clark, R. D.; Consiglio, S.; Wajda, C. S.; Nakamura, G.; Leusink, G. J. [TEL Technology Center, America, LLC, NanoFab 300 South 255 Fuller Road, Suite 244, Albany, New York 12203 (United States)

    2015-05-11

    This work evaluates the defects in HfZrO as a function of Zr addition into HfO{sub 2} and when the dielectric was subjected to a slot-plane-antenna (SPA) plasma treatment in a cyclic process to form TiN/HfZrO/SiON/Si gate stacks. The defect energy levels, estimated by temperature-dependent current-voltage measurements, suggest that Zr addition in HfO{sub 2} modifies the charge state of the oxygen vacancy formation, V{sup +}. The influence of electron affinity variation of Hf and Zr ions on the charged oxygen vacancy levels seems to have contributed to the increase in defect activation energy, E{sub a}, from 0.32 eV to 0.4 eV. The cyclic SPA plasma exposure further reduces the oxygen vacancy formation because of the film densification. When the dielectric was subjected to a constant voltage stress, the charge state oxygen vacancy formation changes to V{sup 2+} and improvement was eliminated. The trap assisted tunneling behavior, as observed by the stress induced leakage current characteristics, further supports the oxygen vacancy formation model.

  2. Hf impurity and defect interactions in helium-implanted NiHf

    Energy Technology Data Exchange (ETDEWEB)

    Govindaraj, R. E-mail: govind@igcar.ernet.in; Gopinathan, K.P.; Viswanathan, B

    2001-07-01

    TDPAC measurements on the reference and untreated sample indicate a loss in anisotropy which is attributed mainly to the association of probe atoms with defects produced by (n,{gamma}) reactions with isotopes of Ni and experiencing combined magnetic and quadrupole interactions of comparable strengths. Evolution of defect free and substitutional fraction of probe atoms experiencing Larmor frequency characteristic of Ni matrix has been studied as a function of isochronal annealing temperature in helium free {alpha}-irradiated and homogeneously helium-implanted samples. No defect associated Larmor precession frequency and/or quadrupole frequency could be deduced in these uncorrelated damage studies. Comparison of recovery stages in {alpha}-irradiated and helium-implanted samples indicates the binding of helium associated defects by Hf impurities. Segregation of Hf atoms is observed in the helium free {alpha}-irradiated sample for annealing treatment at 973 K, while no such effect is observed in the helium-implanted sample for isochronal annealing treatments up to 1273 K.

  3. Determination of reactivity rates of silicate particle-size fractions

    OpenAIRE

    Angélica Cristina Fernandes Deus; Leonardo Theodoro Büll; Juliano Corulli Corrêa; Roberto Lyra Villas Boas

    2014-01-01

    The efficiency of sources used for soil acidity correction depends on reactivity rate (RR) and neutralization power (NP), indicated by effective calcium carbonate (ECC). Few studies establish relative efficiency of reactivity (RER) for silicate particle-size fractions, therefore, the RER applied for lime are used. This study aimed to evaluate the reactivity of silicate materials affected by particle size throughout incubation periods in comparison to lime, and to calculate the RER for silicat...

  4. Tracking magmatic processes through Zr/Hf ratios in rocks and Hf and Ti zoning in zircons: An example from the Spirit Mountain batholith, Nevada

    Science.gov (United States)

    Lowery, Claiborne L.E.; Miller, C.F.; Walker, B.A.; Wooden, J.L.; Mazdab, F.K.; Bea, F.

    2006-01-01

    Zirconium and Hf are nearly identical geochemically, and therefore most of the crust maintains near-chondritic Zr/Hf ratios of ???35-40. By contrast, many high-silica rhyolites and granites have anomalously low Zr/Hf (15-30). As zircon is the primary reservoir for both Zr and Hf and preferentially incorporates Zr, crystallization of zircon controls Zr/ Hf, imprinting low Zr/Hf on coexisting melt. Thus, low Zr/Hf is a unique fingerprint of effective magmatic fractionation in the crust. Age and compositional zonation in zircons themselves provide a record of the thermal and compositional histories of magmatic systems. High Hf (low Zr/ Hf) in zircon zones demonstrates growth from fractionated melt, and Ti provides an estimate of temperature of crystallization (TTiZ) (Watson and Harrison, 2005). Whole-rock Zr/Hf and zircon zonation in the Spirit Mountain batholith, Nevada, document repeated fractionation and thermal fluctuations. Ratios of Zr/Hf are ???30-40 for cumulates and 18-30 for high-SiO2 granites. In zircons, Hf (and U) are inversely correlated with Ti, and concentrations indicate large fluctuations in melt composition and TTiZ (>100??C) for individual zircons. Such variations are consistent with field relations and ion-probe zircon geochronology that indicate a >1 million year history of repeated replenishment, fractionation, and extraction of melt from crystal mush to form the low Zr/Hf high-SiO2 zone. ?? 2006 The Mineralogical Society.

  5. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    Directory of Open Access Journals (Sweden)

    Molina-Aldareguia Jon

    2011-01-01

    Full Text Available Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001 substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea

  6. Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

    2016-08-15

    Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

  7. Determination of isothermal section of Ni-Re-Hf ternary system at 1173 K

    Institute of Scientific and Technical Information of China (English)

    王日初; 柳春雷; 金展鹏

    2002-01-01

    The phase equilibriua in the Ni-Re-Hf ternary system at 1173K were investigated by means of diffusion triple technique and electron microprobe analysis(EMPA). The experimental results indicate that two ternary intermetallics (α and β) and five binary intermetallics (Ni3Hf, Ni10Hf7, Ni11Hf9, NiHf and NiHf2) exist in the Ni-Re-Hf system at 1173 K. A tentative isothermal section of this system at 1173 K was constructed on the basis of experimental results. The isothermal section consists of nine three-phase regions, five of which are supported by the experimental data.

  8. High Pressure/Temperature Metal Silicate Partitioning of Tungsten

    Science.gov (United States)

    Shofner, G. A.; Danielson, L.; Righter, K.; Campbell, A. J.

    2010-01-01

    The behavior of chemical elements during metal/silicate segregation and their resulting distribution in Earth's mantle and core provide insight into core formation processes. Experimental determination of partition coefficients allows calculations of element distributions that can be compared to accepted values of element abundances in the silicate (mantle) and metallic (core) portions of the Earth. Tungsten (W) is a moderately siderophile element and thus preferentially partitions into metal versus silicate under many planetary conditions. The partitioning behavior has been shown to vary with temperature, silicate composition, oxygen fugacity, and pressure. Most of the previous work on W partitioning has been conducted at 1-bar conditions or at relatively low pressures, i.e. <10 GPa, and in two cases at or near 20 GPa. According to those data, the stronger influences on the distribution coefficient of W are temperature, composition, and oxygen fugacity with a relatively slight influence in pressure. Predictions based on extrapolation of existing data and parameterizations suggest an increased pressured depe