A comparative study of charge trapping in HfO{sub 2}/Al{sub 2}O{sub 3} and ZrO{sub 2}/Al{sub 2}O{sub 3} based multilayered metal/high-k/oxide/Si structures

Energy Technology Data Exchange (ETDEWEB)

Spassov, D., E-mail: d_spassov@abv.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Skeparovski, A. [Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje (Macedonia, The Former Yugoslav Republic of); Paskaleva, A. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Novkovski, N. [Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje (Macedonia, The Former Yugoslav Republic of)

2016-09-01

The electrical properties of multilayered HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2}/SiO{sub 2} and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} metal-oxide semiconductor capacitors were investigated in order to evaluate the possibility of their application in charge-trapping non-volatile memory devices. The stacks were deposited by reactive radiofrequency magnetron sputtering on Si substrates with thermal SiO{sub 2} with a thickness ranging from 2 to 5 nm. Both types of stacks show negative initial oxide charge and its density is higher for HfO{sub 2}-based structures. Memory window up to 6V at sweeping voltage range of ± 16V was obtained for HfO{sub 2}-based stacks. The hysteresis in these structures is mainly due to a trapping of electrons injected from the Si substrate. The charge-trapping properties of ZrO{sub 2}-based samples are compromised by the high leakage currents and the dielectric breakdown. The conduction through the capacitors at low applied voltages results from hopping of thermally excited electrons from one isolated state to another. The energy depth of the traps participating in the hopping conduction was determined as ~ 0.7 eV for the HfO{sub 2}-based layers and ~ 0.6 eV for ZrO{sub 2}-based ones, originating from negatively charged oxygen vacancies. At high electric fields, the current voltage characteristics were interpreted in terms of space charge limited currents, Fowler–Nordheim tunneling, Schottky emission, and Poole–Frenkel mechanism. The charge retention characteristics do not depend on the thickness of the tunnel SiO{sub 2}. - Highlights: • Sputtered HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2} and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2} charge-trapping layers were studied. • HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2} stacks show memory window up to 6 V and good retention times. • Negatively charged oxygen vacancies were identified as main defects in the stacks. • Electrical breakdown compromise the charge-trapping properties

Interface and oxide traps in high-κ hafnium oxide films

International Nuclear Information System (INIS)

Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

2004-01-01

The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

Transverse-flow quasi-cw HF chemical laser: design and preliminary performance

International Nuclear Information System (INIS)

Gagne, J.M.; Mah, S.Q.; Conturie, Y.

1974-01-01

A small transverse-flow HF chemical laser has been constructed using a large volume microwave plasma generator for the production of F atoms. The F atoms react with hydrogen to form the lasing HF molecules. The active medium is about 5 cm long, and the maximum average laser power was found to be 560 mW for all lines. Three laser lines with wavelengths 2.61 μm, 2.64 μm, and 2.73 μm were observed. The time-varying laser transition profile closely resembles the density profile of the excited fluorine atoms in the plasma. Both profiles are greatly affected by changes in flow conditions

Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

International Nuclear Information System (INIS)

Tang Zhen-Jie; Li Rong; Yin Jiang

2013-01-01

A composition-modulated (HfO 2 ) x (Al 2 O3) 1−x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO 2 ) x (Al 2 O 3 ) 1−x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Benchmarking Hydrogen and Carbon NMR Chemical Shifts at HF, DFT, and MP2 Levels.

Science.gov (United States)

Flaig, Denis; Maurer, Marina; Hanni, Matti; Braunger, Katharina; Kick, Leonhard; Thubauville, Matthias; Ochsenfeld, Christian

2014-02-11

An extensive study of error distributions for calculating hydrogen and carbon NMR chemical shifts at Hartree-Fock (HF), density functional theory (DFT), and Møller-Plesset second-order perturbation theory (MP2) levels is presented. Our investigation employs accurate CCSD(T)/cc-pVQZ calculations for providing reference data for 48 hydrogen and 40 carbon nuclei within an extended set of chemical compounds covering a broad range of the NMR scale with high relevance to chemical applications, especially in organic chemistry. Besides the approximations of HF, a variety of DFT functionals, and conventional MP2, we also present results with respect to a spin component-scaled MP2 (GIAO-SCS-MP2) approach. For each method, the accuracy is analyzed in detail for various basis sets, allowing identification of efficient combinations of method and basis set approximations.

Determination of trapping parameters and the chemical diffusion coefficient from hydrogen permeation experiments

International Nuclear Information System (INIS)

Svoboda, J.; Mori, G.; Prethaler, A.; Fischer, F.D.

2014-01-01

Highlights: • A modeling study for diffusion of hydrogen with traps is presented. • Introduction of a new chemical diffusion coefficient. • Density of traps and average depth of traps can be determined. • Lattice diffusion and sub-surface concentration of atomic hydrogen can be determined. - Abstract: An improved diffusion theory accounting for trapping effects is applied to evaluation of hydrogen permeation experiments performed for pure iron and pearlitic and martensitic steels. The trapping parameters as molar volume and depth of traps are determined by fitting experiments by simulations based on the theory. The concentration-dependent chemical diffusion coefficient of hydrogen is extracted indicating that the trapping effect on diffusion in pure iron and pearlitic steel is negligible. However, it is significant for martensitic steel, for which the chemical diffusion coefficient cannot be considered as concentration-independent as it is established in current standards

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

International Nuclear Information System (INIS)

Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

2014-01-01

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Graphene-edge dielectrophoretic tweezers for trapping of biomolecules.

Science.gov (United States)

Barik, Avijit; Zhang, Yao; Grassi, Roberto; Nadappuram, Binoy Paulose; Edel, Joshua B; Low, Tony; Koester, Steven J; Oh, Sang-Hyun

2017-11-30

The many unique properties of graphene, such as the tunable optical, electrical, and plasmonic response make it ideally suited for applications such as biosensing. As with other surface-based biosensors, however, the performance is limited by the diffusive transport of target molecules to the surface. Here we show that atomically sharp edges of monolayer graphene can generate singular electrical field gradients for trapping biomolecules via dielectrophoresis. Graphene-edge dielectrophoresis pushes the physical limit of gradient-force-based trapping by creating atomically sharp tweezers. We have fabricated locally backgated devices with an 8-nm-thick HfO 2 dielectric layer and chemical-vapor-deposited graphene to generate 10× higher gradient forces as compared to metal electrodes. We further demonstrate near-100% position-controlled particle trapping at voltages as low as 0.45 V with nanodiamonds, nanobeads, and DNA from bulk solution within seconds. This trapping scheme can be seamlessly integrated with sensors utilizing graphene as well as other two-dimensional materials.

Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

Energy Technology Data Exchange (ETDEWEB)

Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

2010-05-31

The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

High-aspect-ratio HfC nanobelts accompanied by HfC nanowires: Synthesis, characterization and field emission properties

Energy Technology Data Exchange (ETDEWEB)

Tian, Song, E-mail: tiansong22@126.com [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); School of Materials Science and Engineering, Chongqing Jiaotong University, Chongqing 400074 (China); Zhang, Yulei; Ren, Jincui; Qiang, Xinfa; Zhang, Shouyang [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); Li, Hejun, E-mail: lihejun@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China)

2017-04-30

Highlights: • HfC naobelts accompanied by HfC nanowires were synthesized by a catalytic CVD method. • HfC nanobelts as a novel structure of HfC ceramic are reported for the first time. • HfC nanobelts have 100–200 μm in lengths and reach up to 10 μm in widths. • The synthesized product is promising field nanoemitters. - Abstract: As a key refractory carbide, hafnium carbide (HfC) is commonly used as structural materials while the field emission (FE) application of HfC in the field of vacuum microelectronics is almost the only one for functional material purposes. Based on its outstanding physical and chemical characteristics, HfC is identified as a potential candidate with satisfactory mechanical properties and long-term and/or high-temperature FE stability for future applications in high-performance field emitters. However, the development of HfC in various FE applications is hindered because it is not facile to fabricate large-scale low-dimensional HfC field nanoemitters. Herein, High-aspect-ratio HfC nanobelts accompanied by HfC nanowires were synthesized on a large scale by a traditional and simple catalytic chemical vapor deposition (CVD) method. Classical vapor–liquid–solid (VLS) theory was employed to explain the growth of the HfC nanowires and nanobelts along axial direction. The thin HfO{sub 2} shell and thin C layer surrounding the nanostructures might give rise to the diameter fluctuation of HfC nanowires and the width increase of HfC nanobelts in lateral direction. Field emission results show that the high-aspect-ratio HfC nanobelts accompanied by the nanowires are promising field nanoemitters, which exhibit excellent field emission properties with a fairly low turn-on field of ∼1.5 V μm{sup −1} and a low current fluctuation less than ∼10%. This suggests that HfC ceramics with high-aspect-ratio nanostructures are ideal cathode material for various field emission applications.

Intrinsic charge trapping in amorphous oxide films: status and challenges

Science.gov (United States)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

Science.gov (United States)

Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

2018-04-01

Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

Influence of the oxidiser gas composition on the overtone generation efficiency of a supersonic cw chemical HF laser

International Nuclear Information System (INIS)

Konkin, S V; Fedorov, Igor' A; Rebone, Vitalii K; Rotinyan, Mikhail A; Tret'yakov, Nikolai E; Galaev, I I; Moroz, M V; Tomashevich, N N

1998-01-01

An experimental investigation was made of the influence of the chemical composition of the oxidiser gas in an atomic-fluorine generator on the efficiency of generation of radiation representing the first overtone of the HF molecule in a self-contained supersonic cw chemical HF laser with the active medium 70 cm long. The optimal chemical composition was different for the fundamental and overtone transitions. A specific output energy of 84 J g -1 at a specific mass flow rate of 0.13 g s -1 cm -2 through the nozzle array was achieved by optimisation of a linear three-mirror optical cavity at the 1.33 - 1.35 μm wavelengths. The overtone radiation power generated in the whole of the active medium was 7.5 kW, corresponding to a 41% efficiency of energy conversion to an overtone. (lasers, active media)

Electrical properties of radio-frequency sputtered HfO{sub 2} thin films for advanced CMOS technology

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Pranab Kumar; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics, National Institute of Technology Silchar, Silchar-788010, Assam, India Phone: +91-3842-224879 (India)

2015-08-28

The Hafnium oxide (HfO{sub 2}) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO{sub 2} film have been studied employing Al/HfO{sub 2}/p-Si metal–oxide–semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO{sub 2} film is obtained as 23,7.57×1011eV{sup −1} cm{sup −2} and 2.7×10{sup −5} Acm{sup −2}, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

International Nuclear Information System (INIS)

Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

2004-01-01

NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

A routine high-precision method for Lu-Hf isotope geochemistry and chronology

Science.gov (United States)

Patchett, P.J.; Tatsumoto, M.

1981-01-01

A method for chemical separation of Lu and Hf from rock, meteorite and mineral samples is described, together with a much improved mass spectrometric running technique for Hf. This allows (i) geo- and cosmochronology using the176Lu???176Hf+??- decay scheme, and (ii) geochemical studies of planetary processes in the earth and moon. Chemical yields for the three-stage ion-exchange column procedure average 90% for Hf. Chemical blanks are international mass spectrometric standard; suitable aliquots, prepared from a single batch of JMC 475, are available from Denver. Lu-Hf analyses of the standard rocks BCR-1 and JB-1 are given. The potential of the Lu-Hf method in isotope geochemistry is assessed. ?? 1980 Springer-Verlag.

Three-Dimensional Optical Trapping for Cell Isolation Using Tapered Fiber Probe by Dynamic Chemical Etching

International Nuclear Information System (INIS)

Taguchi, K; Okada, J; Nomura, Y; Tamura, K

2012-01-01

In this paper, chemically etched fiber probe was proposed for laser trapping and manipulation of cells. We fabricated tapered fiber probe by dynamic chemical etching technique. Three-Dimensional optical trap of a yeast cell dispersed in water solution could be formed by the fiber tip with 17deg tip. Optical forces were sufficient to move the yeast cell for trapping and manipulation. From these experimental results, it was found that our proposed tapered fiber tip was a promising tool for cell isolation.

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

Directory of Open Access Journals (Sweden)

Nenad Novkovski

2018-01-01

Full Text Available Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V, several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

Mechanical, electronic, chemical bonding and optical properties of cubic BaHfO3: First-principles calculations

International Nuclear Information System (INIS)

Liu Qijun; Liu Zhengtang; Feng Liping; Tian Hao

2010-01-01

We have performed ab-initio total energy calculations using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT) to study structural parameters, mechanical, electronic, chemical bonding and optical properties of cubic BaHfO 3 . The calculated lattice parameter and independent elastic constants are in good agreement with previous theoretical and experimental work. The bulk, shear and Young's modulus, Poisson coefficient, compressibility and Lame constants are obtained using Voigt-Reuss-Hill method and the Debye temperature is estimated using Debye-Grueneisen model, which are consistent with previous results. Electronic and chemical bonding properties have been studied from the calculations of band structure, density of states and charge densities. Furthermore, in order to clarify the mechanism of optical transitions of cubic BaHfO 3 , the complex dielectric function, refractive index, extinction coefficient, reflectivity, absorption efficient, loss function and complex conductivity function are calculated. Then, we have explained the origins of spectral peaks on the basis of the theory of crystal-field and molecular-orbital bonding.

Plasma accumulation in the HF supplemented mirror trap

International Nuclear Information System (INIS)

Dougar-Jabon, V.D.; Golovaniksky, K.S.; Karyaka, V.I.

1975-01-01

The confinement of plasma bunches in the mirror trap with the combined barrier at ECR is experimentally studied. Under fulfilment of the phase autofocusing condition the reflection of electrons by the combined barrier is quasiadiabatic and plasma losses are determined by perpendicular diffusion. (Auth.)

Chemical characterization of microparticles by laser ablation in an ion trap mass spectrometer

International Nuclear Information System (INIS)

Dale, J.M.; Whitten, W.B.; Ramsey, J.M.

1991-01-01

We are developing a new technique for the chemical characterization of microparticles based upon the use of electrodynamic traps. The electrodynamic trap has achieved widespread use in the mass spectrometry community in the form of the ion trap mass spectrometer or quadrupole ion trap. Small macroscopic particles can be confined or levitated within the electrode structure of a three-dimensional quadrupole electrodynamic trap in the same way as fundamental charges or molecular ions by using a combination of ac and dc potentials. Our concept is to use the same electrode structure to perform both microparticle levitation and ion trapping/mass analysis. The microparticle will first be trapped and spatially stabilized within the trap for characterization by optical probes, i.e., absorption, fluorescence, or Raman spectroscopy. After the particle has been optically characterized, it is further characterized using mass spectrometry. Ions are generated from the particle surface using laser ablation or desorption. The characteristics of the applied voltages are changed to trap the ions formed by the laser with the ions subsequently mass analyzed. The work described in this paper focuses on the ability to perform laser desorption experiments on microparticles contained within the ion trap

An integrated ion trap and time-of-flight mass spectrometer for chemical and photo- reaction dynamics studies

International Nuclear Information System (INIS)

Schowalter, Steven J.; Chen Kuang; Rellergert, Wade G.; Sullivan, Scott T.; Hudson, Eric R.

2012-01-01

We demonstrate the integration of a linear quadrupole trap with a simple time-of-flight mass spectrometer with medium-mass resolution (m/Δm∼ 50) geared towards the demands of atomic, molecular, and chemical physics experiments. By utilizing a novel radial ion extraction scheme from the linear quadrupole trap into the mass analyzer, a device with large trap capacity and high optical access is realized without sacrificing mass resolution. This provides the ability to address trapped ions with laser light and facilitates interactions with neutral background gases prior to analyzing the trapped ions. Here, we describe the construction and implementation of the device as well as present representative ToF spectra. We conclude by demonstrating the flexibility of the device with proof-of-principle experiments that include the observation of molecular-ion photodissociation and the measurement of trapped-ion chemical reaction rates.

Trace Detection of Organophosphorus Chemical Warfare Agents in Wastewater and Plants by Luminescent UIO-67(Hf) and Evaluating the Bioaccumulation of Organophosphorus Chemical Warfare Agents.

Science.gov (United States)

Lian, Xiao; Yan, Bing

2018-05-02

Organophosphorus chemical warfare agents (OPCWAs) are a group of organic pollutants characterized by high toxicity and chemical stability, and they are very difficult to be degraded. The trace quality of OPCWAs in water and food will cause great harm to the human body. Therefore, the detection of OPCWAs is a difficult challenge, which has become the research hotspot over the world. In this work, a Hf-based luminescent metal-organic framework (Eu@1) is prepared, and the reactivity of Hf 12 results in a methanephosphonic acid (MPA)-induced luminescence quenching and the charge transfer from MPA to Hf(IV) and generated exciplexes which are responsible for this quenching effect. The excellent performance of Eu@1 in the detection of MPA, with its finer selectivity, high sensitivity (LOD = 0.4 ppm), and large linear range (10 -7 to 10 -3 M), is encouraging for application in wastewater detection. Importantly, MPA is a pollutant that can be absorbed by plants and causes the bioaccumulation effect, and thus, the detection of MPA in real plant samples is a purposeful topic. Eu@1 also achieved satisfactory results in actual plant sample testing, and the bioaccumulation of MPA in onions, turnips, and cabbages is determined via our sensor. This fabricated detector provides a feasible path for the detection of ppm-level OPCWAs in a complex environment, which will help humans to avoid OPCWA-contaminated foods.

An integrated ion trap and time-of-flight mass spectrometer for chemical and photo- reaction dynamics studies.

Science.gov (United States)

Schowalter, Steven J; Chen, Kuang; Rellergert, Wade G; Sullivan, Scott T; Hudson, Eric R

2012-04-01

We demonstrate the integration of a linear quadrupole trap with a simple time-of-flight mass spectrometer with medium-mass resolution (m/Δm ∼ 50) geared towards the demands of atomic, molecular, and chemical physics experiments. By utilizing a novel radial ion extraction scheme from the linear quadrupole trap into the mass analyzer, a device with large trap capacity and high optical access is realized without sacrificing mass resolution. This provides the ability to address trapped ions with laser light and facilitates interactions with neutral background gases prior to analyzing the trapped ions. Here, we describe the construction and implementation of the device as well as present representative ToF spectra. We conclude by demonstrating the flexibility of the device with proof-of-principle experiments that include the observation of molecular-ion photodissociation and the measurement of trapped-ion chemical reaction rates. © 2012 American Institute of Physics

Interaction of N-hydroxyurea with strong proton donors: HCl and HF

International Nuclear Information System (INIS)

Sałdyka, Magdalena

2014-01-01

Highlights: • 1:1 and 1:2 N-hydroxyurea complexes with HCl and HF are trapped in argon matrices. • The complexes are stabilized by strong X–H⋯O bond. • Hydrogen bonds in the cyclic 1:2 complexes show strong cooperativity. • The C=O group is the strongest proton acceptor centre in the N-hydroxyurea molecule. - Abstract: An infrared spectroscopic and MP2/6-311++G(2d,2p) study of strong hydrogen bonded complexes of N-hydroxyurea (NH 2 CONHOH) with hydrogen halides (HCl and HF) trapped in solid argon matrices is reported. 1:1 and 1:2 complexes between N-hydroxyurea and hydrogen chloride, hydrogen fluoride have been identified in the NH 2 CONHOH/HCl/Ar, NH 2 CONHOH/HF/Ar matrices, respectively; their structures were determined by comparison of the spectra with the results of calculations. In the 1:1 complexes, identified for both hydrogen halide molecules, the cyclic structure stabilized by the X–H⋯O and N–H⋯X bonds is present; for the NH 2 CONHOH⋯HF system another isomeric 1:1 complex is also observed. Two 1:2 complexes were identified for the N-hydroxyurea–hydrogen chloride system characterised by the Cl–H⋯O and N–H⋯Cl bonds. The results of the study evidence that N-hydroxyurea is an oxygen base in the gas-phase with the carbonyl group as the strongest proton acceptor centre in the molecule

Interaction of N-hydroxyurea with strong proton donors: HCl and HF

Energy Technology Data Exchange (ETDEWEB)

Sałdyka, Magdalena, E-mail: magdalena.saldyka@chem.uni.wroc.pl

2014-11-24

Highlights: • 1:1 and 1:2 N-hydroxyurea complexes with HCl and HF are trapped in argon matrices. • The complexes are stabilized by strong X–H⋯O bond. • Hydrogen bonds in the cyclic 1:2 complexes show strong cooperativity. • The C=O group is the strongest proton acceptor centre in the N-hydroxyurea molecule. - Abstract: An infrared spectroscopic and MP2/6-311++G(2d,2p) study of strong hydrogen bonded complexes of N-hydroxyurea (NH{sub 2}CONHOH) with hydrogen halides (HCl and HF) trapped in solid argon matrices is reported. 1:1 and 1:2 complexes between N-hydroxyurea and hydrogen chloride, hydrogen fluoride have been identified in the NH{sub 2}CONHOH/HCl/Ar, NH{sub 2}CONHOH/HF/Ar matrices, respectively; their structures were determined by comparison of the spectra with the results of calculations. In the 1:1 complexes, identified for both hydrogen halide molecules, the cyclic structure stabilized by the X–H⋯O and N–H⋯X bonds is present; for the NH{sub 2}CONHOH⋯HF system another isomeric 1:1 complex is also observed. Two 1:2 complexes were identified for the N-hydroxyurea–hydrogen chloride system characterised by the Cl–H⋯O and N–H⋯Cl bonds. The results of the study evidence that N-hydroxyurea is an oxygen base in the gas-phase with the carbonyl group as the strongest proton acceptor centre in the molecule.

Capture of Nontarget Flies (Diptera: Lauxaniidae, Chloropidae, and Anthomyiidae on Traps Baited with Volatile Chemicals in Field-Crop Habitats

Directory of Open Access Journals (Sweden)

Louis S. Hesler

2016-01-01

Full Text Available Volatile chemicals increased trap catch of flies from the families Lauxaniidae [Homoneura bispina (Loew and Camptoprosopella borealis Shewell], Chloropidae (Olcella sp., and Anthomyiidae (Delia spp. in field crops. With lauxaniids, baiting with 2-phenylethanol on cotton-roll dispensers increased catch of H. bispina in two corn plot tests, and methyl salicylate increased trap catch in one test. Traps baited with methyl salicylate increased the catch of C. borealis. When using plastic-sachet dispensers, traps baited with methyl salicylate caught more H. bispina than ones baited with 2-phenylethanol, whereas traps baited with 2-phenylethanol caught more C. borealis than those with methyl salicylate. For chloropids, traps baited with 2-isopropyl-3-methoxypyrazine greatly increased catch of Olcella flies in corn and soybean. With anthomyiids, catch of male Delia flies in wheat increased with 2-phenylethanol on cotton rolls and with either 2-phenylethanol or methyl salicylate using plastic dispensers. In soybean, 2-phenylethanol formulated on cotton rolls or in plastic dispensers increased catch of male Delia flies, but methyl salicylate did not affect trap catch. Trap catch of female Delia flies did not vary among chemicals. In another test in soybean, trap catch of both male and female Delia flies was greater with 2-phenylethanol than with other volatile chemicals.

Post-control surveillance of Triatoma infestans and Triatoma sordida with chemically-baited sticky traps.

Science.gov (United States)

Rojas de Arias, Antonieta; Abad-Franch, Fernando; Acosta, Nidia; López, Elsa; González, Nilsa; Zerba, Eduardo; Tarelli, Guillermo; Masuh, Héctor

2012-01-01

Chagas disease prevention critically depends on keeping houses free of triatomine vectors. Insecticide spraying is very effective, but re-infestation of treated dwellings is commonplace. Early detection-elimination of re-infestation foci is key to long-term control; however, all available vector-detection methods have low sensitivity. Chemically-baited traps are widely used in vector and pest control-surveillance systems; here, we test this approach for Triatoma spp. detection under field conditions in the Gran Chaco. Using a repeated-sampling approach and logistic models that explicitly take detection failures into account, we simultaneously estimate vector occurrence and detection probabilities. We then model detection probabilities (conditioned on vector occurrence) as a function of trapping system to measure the effect of chemical baits. We find a positive effect of baits after three (odds ratio [OR] 5.10; 95% confidence interval [CI(95)] 2.59-10.04) and six months (OR 2.20, CI(95) 1.04-4.65). Detection probabilities are estimated at p ≈ 0.40-0.50 for baited and at just p ≈ 0.15 for control traps. Bait effect is very strong on T. infestans (three-month assessment: OR 12.30, CI(95) 4.44-34.10; p ≈ 0.64), whereas T. sordida is captured with similar frequency in baited and unbaited traps. Chemically-baited traps hold promise for T. infestans surveillance; the sensitivity of the system at detecting small re-infestation foci rises from 12.5% to 63.6% when traps are baited with semiochemicals. Accounting for imperfect detection, infestation is estimated at 26% (CI(95) 16-40) after three and 20% (CI(95) 11-34) after six months. In the same assessments, traps detected infestation in 14% and 8.5% of dwellings, whereas timed manual searches (the standard approach) did so in just 1.4% of dwellings only in the first survey. Since infestation rates are the main indicator used for decision-making in control programs, the approach we present may help improve T

Reconciliation of the excess 176Hf conundrum in meteorites: Recent disturbances of the Lu-Hf and Sm-Nd isotope systematics

Science.gov (United States)

Bast, Rebecca; Scherer, Erik E.; Sprung, Peter; Mezger, Klaus; Fischer-Gödde, Mario; Taetz, Stephan; Böhnke, Mischa; Schmid-Beurmann, Hinrich; Münker, Carsten; Kleine, Thorsten; Srinivasan, Gopalan

2017-09-01

The long-lived 176Lu-176Hf and 147Sm-143Nd radioisotope systems are commonly used chronometers, but when applied to meteorites, they can reveal disturbances. Specifically, Lu-Hf isochrons commonly yield dates up to ∼300 Myr older than the solar system and varying initial 176Hf/177Hf values. We investigated this problem by attempting to construct mineral and whole rock isochrons for eucrites and angrites. Meteorites from different parent bodies exhibit similar disturbance features suggesting that a common process is responsible. Minerals scatter away from isochron regressions for both meteorite classes, with low-Hf phases such as plagioclase and olivine typically being most displaced above (or left of) reference isochrons. Relatively Hf-rich pyroxene is less disturbed but still to the point of steepening Lu-Hf errorchrons. Using our Lu-Hf and Sm-Nd data, we tested various Hf and Lu redistribution scenarios and found that decoupling of Lu/Hf from 176Hf/177Hf must postdate the accumulation of significant radiogenic 176Hf. Therefore early irradiation or diffusion cannot explain the excess 176Hf. Instead, disturbed meteorite isochrons are more likely caused by terrestrial weathering, contamination, or common laboratory procedures. The partial dissolution of phosphate minerals may predominantly remove rare earth elements including Lu, leaving relatively immobile and radiogenic Hf behind. Robust Lu-Hf (and improved Sm-Nd) meteorite geochronology will require the development of chemical or physical methods for removing unsupported radiogenic Hf and silicate-hosted terrestrial contaminants without disturbing parent-daughter ratios.

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

International Nuclear Information System (INIS)

Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

2011-01-01

In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

QAPP for Hydraulic Fracturing (HF) Surface Spills Data Analysis

Science.gov (United States)

This QAPP provides information concerning the analysis of spills associated with hydraulic fracturing. This project is relevant to both the chemical mixing and flowback and produced water stages of the HF water cycle as found in the HF Study Plan.

Trapping, self-trapping and the polaron family

International Nuclear Information System (INIS)

Stoneham, A M; Gavartin, J; Shluger, A L; Kimmel, A V; Ramo, D Munoz; Roennow, H M; Aeppli, G; Renner, C

2007-01-01

The earliest ideas of the polaron recognized that the coupling of an electron to ionic vibrations would affect its apparent mass and could effectively immobilize the carrier (self-trapping). We discuss how these basic ideas have been generalized to recognize new materials and new phenomena. First, there is an interplay between self-trapping and trapping associated with defects or with fluctuations in an amorphous solid. In high dielectric constant oxides, like HfO 2 , this leads to oxygen vacancies having as many as five charge states. In colossal magnetoresistance manganites, this interplay makes possible the scanning tunnelling microscopy (STM) observation of polarons. Second, excitons can self-trap and, by doing so, localize energy in ways that can modify the material properties. Third, new materials introduce new features, with polaron-related ideas emerging for uranium dioxide, gate dielectric oxides, Jahn-Teller systems, semiconducting polymers and biological systems. The phonon modes that initiate self-trapping can be quite different from the longitudinal optic modes usually assumed to dominate. Fourth, there are new phenomena, like possible magnetism in simple oxides, or with the evolution of short-lived polarons, like muons or excitons. The central idea remains that of a particle whose properties are modified by polarizing or deforming its host solid, sometimes profoundly. However, some of the simpler standard assumptions can give a limited, indeed misleading, description of real systems, with qualitative inconsistencies. We discuss representative cases for which theory and experiment can be compared in detail

Ln3+ (Ln=Ce, Tb, Dy) and Hf doping of LuI3 powders – A material and spectroscopic study

International Nuclear Information System (INIS)

Wiatrowska, Aneta; Keur, Wilco; Ronda, Cees

2016-01-01

The moisture sensitivity of LuI 3 :Ce,Hf and luminescent properties of undoped LuI 3 and LuI 3 :M (M=Ce 3+ , Tb 3+ , Dy 3+ ) powders were investigated. The possibility of improving the air and moisture stability of LuI 3 :Ce by Hf doping was tested. It was proven that the Hf contribution to the LuI 3 :Ce stability is very limited and is insignificant to render LuI 3 :Ce scintillator powders suitable for applications. Photoluminescence results of LuI 3 without dopants added on purpose showed luminescence due to a plurality of rare-earth elements' impurities. Two types of self-trapped luminescence were found. Energy transfer between host lattice, self-trapped excitons and rare-earth ions was investigated.

Investigation of electronic structure and chemical bonding of intermetallic Pd2HfIn: An ab-initio study

Science.gov (United States)

Bano, Amreen; Gaur, N. K.

2018-05-01

Ab-initio calculations are carried out to study the electronic and chemical bonding properties of Intermetallic full Heusler compound Pd2HfIn which crystallizes in F-43m structure. All calculations are performed by using density functional theory (DFT) based code Quantum Espresso. Generalized gradient approximations (GGA) of Perdew- Burke- Ernzerhof (PBE) have been adopted for exchange-correlation potential. Calculated electronic band structure reveals the metallic character of the compound. From partial density of states (PDoS), we found the presence of relatively high intensity electronic states of 4d-Pd atom at Fermi level. We have found a pseudo-gap just abouve the Fermi level and N(E) at Fermi level is observed to be 0.8 states/eV, these finding indicates the existence of superconducting character in Pd2HfIn.

Chemical characterization of microparticles by laser ablation in an ion trap mass spectrometer

International Nuclear Information System (INIS)

Dale, J.M.; Whitten, W.B.; Ramsey, J.M.

1991-01-01

We are developing a new technique for the chemical characterization of microparticles based upon the use of electrodynamic traps. The electrodynamic trap has achieved widespread use in the mass spectrometry community in the form of the ion trap mass spectrometer or quadrupole ion trap. Small macroscopic particles can be confined or leviated within the electrode structure of a three-dimensional quadrupole electrodynamic trap in the same way as fundamental charges or molecular ions by using a combination of ac and dc potentials. Our concept is to use the same electrode structure to perform both microparticle levitation and ion trapping/mass analysis. The microparticle will first be trapped and spatially stabilized within the trap for characterization by optical probes, i.e., absorption, fluorescence, or Raman spectroscopy. After the particle has been optically characterized, it is further characterized using mass spectrometry. Ions are generated from the particle surface using laser ablation or desorption. The characteristics of the applied voltages are changed to trap the ions formed by the laser with the ions subsequently mass analyzed. The work described in this paper focuses on the ability to perform laser desorption experiments on microparticles contained within the ion trap. Laser desorption has previously been demonstrated in ion trap devices by applying the sample to a probe which is inserted so as to place the sample at the surface of the ring electrode. Our technique requires the placement of a microparticle in the center of the trap. Our initial experiments have been performed on falling microparticles rather than levitated particles to eliminate voltage switching requirements when changing from particle to ion trapping modes

Anion exchange behavior of Ti, Zr, Hf, Nb and Ta as homologues of Rf and Db in mixed HF-acetone solutions

International Nuclear Information System (INIS)

Aksenov, N.V.; Bozhikov, G.A.; Starodub, G.Ya.; Dmitriev, S.N.; Filosofov, D.V.; Jon Sun Jin; Radchenko, V.I.; Lebedev, N.A.; Novgorodov, A.F.

2009-01-01

We studied in detail the sorption behavior of Ti, Zr, Hf, Nb and Ta on AG 1 anion exchange resin in HF-acetone mixed solutions as a function of organic cosolvent and acid concentrations. Anion exchange behavior was found to be strongly acetone concentration dependent. The distribution coefficients of Ti, Zr, Hf and Nb increased and those of Ta decreased with increasing content of acetone in HF solutions. With increasing HF concentration, anion exchange equilibrium analysis indicated the formation of fluoride complexes of group-4 elements with charge -3 and Ta with charge -2. For Nb the slope of -2 increased up to -5. Optimal conditions for separation of the elements using AIX chromatography were found. Group-4 elements formed MF 7 3- (M = Ti, Zr, Hf) complexes whose sorption decreased Ti > Hf > Zr in reverse order of complex stability. This fact is of particular interest for studying ion exchange behavior of Rf compared to Ti. The advantages of studying chemical properties of Rf and Db in aqueous HF solutions mixed with organic solvents are briefly discussed

Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

Energy Technology Data Exchange (ETDEWEB)

Matveyev, Yu.; Zenkevich, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation); NRNU “Moscow Engineering Physics Institute”, 115409 Moscow (Russian Federation); Egorov, K.; Markeev, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation)

2015-01-28

Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

Science.gov (United States)

Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

2017-05-24

The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

International Nuclear Information System (INIS)

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

2006-01-01

Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

Landau damping in trapped Bose condensed gases

Energy Technology Data Exchange (ETDEWEB)

Jackson, B; Zaremba, E [Department of Physics, Queen' s University, Kingston, ON K7L 3N6 (Canada)

2003-07-01

We study Landau damping in dilute Bose-Einstein condensed gases in both spherical and prolate ellipsoidal harmonic traps. We solve the Bogoliubov equations for the mode spectrum in both of these cases, and calculate the damping by summing over transitions between excited quasiparticle states. The results for the spherical case are compared to those obtained in the Hartree-Fock (HF) approximation, where the excitations take on a single-particle character, and excellent agreement between the two approaches is found. We have also taken the semiclassical limit of the HF approximation and obtain a novel expression for the Landau damping rate involving the time-dependent self-diffusion function of the thermal cloud. As a final approach, we study the decay of a condensate mode by making use of dynamical simulations in which both the condensate and thermal cloud are evolved explicitly as a function of time. A detailed comparison of all these methods over a wide range of sample sizes and trap geometries is presented.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

Science.gov (United States)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory

International Nuclear Information System (INIS)

Liu, L.; Xu, J.P.; Chen, J.X.; Ji, F.; Huang, X.D.; Lai, P.T.

2012-01-01

A high-k gate stack structure with ultrathin HfON/SiO 2 as dual tunneling layer (DTL), AlN as charge storage layer (CSL) and HfAlO as blocking layer (BL) is proposed to make a charge-trapping-type metal–oxide–nitride–oxide–silicon non-volatile memory device by employing in-situ sputtering method. The validity of the structure is examined and confirmed by transmission electron microscopy. The memory window, program/erase, endurance and retention properties are investigated and compared with similar gate stack structure with Si 3 N 4 /SiO 2 as DTL, HfO 2 as CSL and Al 2 O 3 as BL. Results show that a large memory window of 3.55 V at a program/erase (P/E) voltage of + 8 V/− 15 V, high P/E speed, and good endurance and retention characteristic can be achieved using the Au/ HfAlO/AlN/(HfON/SiO 2 )/Si gate stack structure. The main mechanisms lie in the enhanced electron injection through the ultrathin high-k HfON/SiO 2 DTL with suitable band offset, high trapping efficiency of the high-k AlN material, and effective blocking role of the high-k HfAlO BL. - Highlights: ► An Au/HfAlO/AlN/(HfON/SiO 2 )/Si high-k gate stack structure is proposed. ► A band-engineered dual tunneling layer (HfON/SiO 2 ) is proposed and prepared. ► A good trade-off among the memory characteristics is obtained. ► In-situ sputtering method is employed to fabricate the gate stack structure.

The Unimolecular Reactions of CF3CHF2 Studied by Chemical Activation: Assignment of Rate Constants and Threshold Energies to the 1,2-H Atom Transfer, 1,1-HF and 1,2-HF Elimination Reactions, and the Dependence of Threshold Energies on the Number of F-Atom Substituents in the Fluoroethane Molecules.

Science.gov (United States)

Smith, Caleb A; Gillespie, Blanton R; Heard, George L; Setser, D W; Holmes, Bert E

2017-11-22

The recombination of CF 3 and CHF 2 radicals in a room-temperature bath gas was used to prepare vibrationally excited CF 3 CHF 2 * molecules with 101 kcal mol -1 of vibrational energy. The subsequent 1,2-H atom transfer and 1,1-HF and 1,2-HF elimination reactions were observed as a function of bath gas pressure by following the CHF 3 , CF 3 (F)C: and C 2 F 4 product concentrations by gas chromatography using a mass spectrometer as the detector. The singlet CF 3 (F)C: concentration was measured by trapping the carbene with trans-2-butene. The experimental rate constants are 3.6 × 10 4 , 4.7 × 10 4 , and 1.1 × 10 4 s -1 for the 1,2-H atom transfer and 1,1-HF and 1,2-HF elimination reactions, respectively. These experimental rate constants were matched to statistical RRKM calculated rate constants to assign threshold energies (E 0 ) of 88 ± 2, 88 ± 2, and 87 ± 2 kcal mol -1 to the three reactions. Pentafluoroethane is the only fluoroethane that has a competitive H atom transfer decomposition reaction, and it is the only example with 1,1-HF elimination being more important than 1,2-HF elimination. The trend of increasing threshold energies for both 1,1-HF and 1,2-HF processes with the number of F atoms in the fluoroethane molecule is summarized and investigated with electronic-structure calculations. Examination of the intrinsic reaction coordinate associated with the 1,1-HF elimination reaction found an adduct between CF 3 (F)C: and HF in the exit channel with a dissociation energy of ∼5 kcal mol -1 . Hydrogen-bonded complexes between HF and the H atom migration transition state of CH 3 (F)C: and the F atom migration transition state of CF 3 (F)C: also were found by the calculations. The role that these carbene-HF complexes could play in 1,1-HF elimination reactions is discussed.

Vib--rotational energy distributions and relaxation processes in pulsed HF chemical lasers

International Nuclear Information System (INIS)

Ben-Shaul, A.; Kompa, K.L.; Schmailzl, U.

1976-01-01

The rate equations governing the temporal evolution of photon densities and level populations in pulsed F+H 2 →HF+H chemical lasers are solved for different initial conditions. The rate equations are solved simultaneously for all relevant vibrational--rotational levels and vibrational--rotational P-branch transitions. Rotational equilibrium is not assumed. Approximate expressions for the detailed state-to-state rate constants corresponding to the various energy transfer processes (V--V, V--R,T, R--R,T) coupling the vib--rotational levels are formulated on the basis of experimental data, approximate theories, and qualitative considerations. The main findings are as follows: At low pressures, R--T transfer cannot compete with the stimulated emission, and the laser output largely reflects the nonequilibrium energy distribution in the pumping reaction. The various transitions reach threshold and decay almost independently and simultaneous lasing on several lines takes place. When a buffer gas is added in excess to the reacting mixture, the enhanced rotational relaxation leads to nearly single-line operation and to the J shift in lasing. Laser efficiency is higher at high inert gas pressures owing to a better extraction of the internal energy from partially inverted populations. V--V exchange enhances lasing from upper vibrational levels but reduces the total pulse intensity. V--R,T processes reduce the efficiency but do not substantially modify the spectral output distribution. The photon yield ranges between 0.4 and 1.4 photons/HF molecule depending on the initial conditions. Comparison with experimental data, when available, is fair

Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

International Nuclear Information System (INIS)

Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

2005-01-01

Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

The isobutylene-isobutane alkylation process in liquid HF revisited.

Science.gov (United States)

Esteves, P M; Araújo, C L; Horta, B A C; Alvarez, L J; Zicovich-Wilson, C M; Ramírez-Solís, A

2005-07-07

Details on the mechanism of HF catalyzed isobutylene-isobutane alkylation were investigated. On the basis of available experimental data and high-level quantum chemical calculations, a detailed reaction mechanism is proposed taking into account solvation effects of the medium. On the basis of our computational results, we explain why the density of the liquid media and stirring rates are the most important parameters to achieve maximum yield of alkylate, in agreement with experimental findings. The ab initio Car-Parrinello molecular dynamics calculations show that isobutylene is irreversibly protonated in the liquid HF medium at higher densities, leading to the ion pair formation, which is shown to be a minimum on the potential energy surface after optimization using periodic boundary conditions. The HF medium solvates preferentially the fluoride anion, which is found as solvated [FHF](-) or solvated F(-.)(HF)(3). On the other hand, the tert-butyl cation is weakly solvated, where the closest HF molecules appear at a distance of about 2.9 Angstrom with the fluorine termination of an HF chain.

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

Action mechanism of hydrogen gas on deposition of HfC coating using HfCl{sub 4}-CH{sub 4}-H{sub 2}-Ar system

Energy Technology Data Exchange (ETDEWEB)

Wang, Yalei, E-mail: yaleipm@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); School of Metallurgy and Environment, Central South University, Changsha, 410083 (China); Li, Zehao [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Xiong, Xiang, E-mail: xiongx@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Li, Xiaobin [School of Metallurgy and Environment, Central South University, Changsha, 410083 (China); Chen, Zhaoke; Sun, Wei [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China)

2016-12-30

Highlights: • HfC coatings were deposited on C/C composites by LPCVD using HfCl4-CH4-H2-Ar system. • Action mechanism of H2 on structure and growth behavior of HfC coating was studied. • Increased H2 concentration leads to transformation in growth mechanism of coating. - Abstract: Hafnium carbide coatings were deposited on carbon/carbon composites by low pressure chemical vapor deposition using HfCl{sub 4}-CH{sub 4}-H{sub 2}-Ar system. The microstructure, mechanical and ablation resistance performance of HfC coatings deposited with various H{sub 2} concentrations were investigated. The effect of hydrogen gas on the deposition of HfC coating was also discussed. Results show that all of the deposited coatings are composed of single cubic HfC phase, the hydrogen gas acted as a crucial role in determining the preferred orientation, microstructure and growth behavior of HfC coatings. During the deposition process, the gas phase supersaturation of the reaction species can be controlled by adjusting the hydrogen gas concentration. When deposited with low hydrogen gas concentration, the coating growth was dominated by the nucleation of HfC, which results in the particle-stacked structure of HfC coating. Otherwise, the coating growth was dominated by the crystal growth at high hydrogen gas concentration, which leads to the column-arranged structure of HfC coating. Under the ablation environment, the coating C2 exhibits better configurational stability and ablation resistance. The coating structure has a significant influence on the mechanical and ablation resistance properties of HfC coating.

Transitions of bandgap and built-in stress for sputtered HfZnO thin films after thermal treatments

Energy Technology Data Exchange (ETDEWEB)

Li, Chih-Hung; Chen, Jian-Zhang [Institute of Applied Mechanics, National Taiwan University, Taipei City 10617, Taiwan (China); Cheng, I-Chun [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

2013-08-28

HfZnO thin films with various Hf contents are sputter-deposited on glass substrates from Hf{sub x}Zn{sub 1−x}O (x = 0, 2.5, 5, 7.5, and 10 at. %) targets at room temperature. The incorporation of Hf in the ZnO film leads to the amorphorization of the materials. The amorphous structures of high-Hf-content films remain after annealing at 600 °C for 30 min. The built-in stresses of as-deposited films are compressive. As the annealing temperature increases, the stresses are relaxed and even become tensile. The films exhibit a high transmission of 80% in the visible region. The optical bandgap increases with the Hf content, but it decreases with the annealing temperature. This can be attributed to the alteration of strain (stress) status in the films and atomic substitution. The reduction of bandgap partly results from the grain growth, which is due to the quantum confinement effect of the small grains. Hf doping increases the resistivity of ZnO owing to the disorder of the material structure and the higher bandgap, which result in more carrier traps and less thermally excited carriers in the conduction bands.

Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

International Nuclear Information System (INIS)

Tokuda, Yutaka; Shimada, Hitoshi

1998-01-01

Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

Chemical Mass Shifts in a Digital Linear Ion Trap as Analytical Identity of o-, m-, and p-Xylene

Science.gov (United States)

Sun, Lulu; Xue, Bing; Huang, Zhengxu; Cheng, Ping; Ma, Li; Ding, Li; Zhou, Zhen

2018-04-01

Chemical mass shifts between isomeric ions of o-, m-, and p-xylene were measured using a digital linear ion trap, and the directions and values of the shifts were found to be correlated to the collision cross sections of the isomers. Both forward and reverse scans were used and the chemical shifts for each pair of isomers in scans of opposite directions were in opposite signs. Using different voltage settings (namely the voltage dividing ratio-VDR) of the ion trap allows adding high order field components in the quadrupole field and results in larger chemical mass shifts. The differential chemical mass shift which combined the shifts from forward and reverse scans doubled the amount of chemical shift, e.g., 0.077 Th between o- and p-xylene, enough for identification of the type of isomer without using an additional ion mobility spectrometer. The feature of equal and opposite chemical mass shifts also allowed to null out the chemical mass shift by calculating the mean m/z value between the two opposite scans and remove or reduce the mass error caused by chemical mass shift. [Figure not available: see fulltext.

Chemical Mass Shifts in a Digital Linear Ion Trap as Analytical Identity of o-, m-, and p-Xylene.

Science.gov (United States)

Sun, Lulu; Xue, Bing; Huang, Zhengxu; Cheng, Ping; Ma, Li; Ding, Li; Zhou, Zhen

2018-07-01

Chemical mass shifts between isomeric ions of o-, m-, and p-xylene were measured using a digital linear ion trap, and the directions and values of the shifts were found to be correlated to the collision cross sections of the isomers. Both forward and reverse scans were used and the chemical shifts for each pair of isomers in scans of opposite directions were in opposite signs. Using different voltage settings (namely the voltage dividing ratio-VDR) of the ion trap allows adding high order field components in the quadrupole field and results in larger chemical mass shifts. The differential chemical mass shift which combined the shifts from forward and reverse scans doubled the amount of chemical shift, e.g., 0.077 Th between o- and p-xylene, enough for identification of the type of isomer without using an additional ion mobility spectrometer. The feature of equal and opposite chemical mass shifts also allowed to null out the chemical mass shift by calculating the mean m/z value between the two opposite scans and remove or reduce the mass error caused by chemical mass shift. Graphical Abstract ᅟ.

Potential Impacts of Spilled Hydraulic Fracturing Fluid Chemicals on Water Resources: Types, volumes, and physical-chemical properties of chemicals

Science.gov (United States)

Hydraulic fracturing (HF) fluid chemicals spilled on-site may impact drinking water resources. While chemicals generally make up <2% of the total injected fluid composition by mass, spills may have undiluted concentrations. HF fluids typically consist of a mixture of base flui...

Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

Science.gov (United States)

Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

2018-06-01

Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theory.

Science.gov (United States)

Calka, Pauline; Sowinska, Malgorzata; Bertaud, Thomas; Walczyk, Damian; Dabrowski, Jarek; Zaumseil, Peter; Walczyk, Christian; Gloskovskii, Andrei; Cartoixà, Xavier; Suñé, Jordi; Schroeder, Thomas

2014-04-09

The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental-theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.

Thermoluminescence in films of HfO2:Dy+3

International Nuclear Information System (INIS)

Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D.; Azorin, J.; Paredes, L.

2014-08-01

In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO 2 :Dy +3 ) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm 2 -s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm 2 ), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO 2 :Dy +3 could be used as radiation monitor in the region of the near UV. (Author)

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

International Nuclear Information System (INIS)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J.R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J.L.

2016-01-01

Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with OH − ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl 4 (hafnium tetrachloride), HfI 4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Comparison of HfCl4, HfI4, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO2 films deposited by ALD: A DFT study

Science.gov (United States)

Cortez-Valadez, M.; Fierro, C.; Farias-Mancilla, J. R.; Vargas-Ortiz, A.; Flores-Acosta, M.; Ramírez-Bon, R.; Enriquez-Carrejo, J. L.; Soubervielle-Montalvo, C.; Mani-Gonzalez, P. G.

2016-06-01

The final structure of HfO2 films grown by atomic layer deposition (ALD) after reaction with OH- ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl4 (hafnium tetrachloride), HfI4 (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO-H was studied employing the B3LYP (Becke 3-parameter, Lee-Yang-Parr) hybrid functional and the PBE (Perdew-Burke-Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Structure, chemistry and luminescence properties of dielectric La{sub x}Hf{sub 1-x}O{sub y} films

Energy Technology Data Exchange (ETDEWEB)

Kaichev, V.V., E-mail: vvk@catalysis.ru [Boreskov Institute of Catalysis, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Smirnova, T.P.; Yakovkina, L.V. [Nikolaev Institute of Inorganic Chemistry, Novosibirsk (Russian Federation); Ivanova, E.V.; Zamoryanskaya, M.V. [Ioffe Physical-Technical Institute, St. Petersburg (Russian Federation); Saraev, A.A. [Boreskov Institute of Catalysis, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Pustovarov, V.A. [Ural State Technical University, Ekaterinburg (Russian Federation); Perevalov, T.V.; Gritsenko, V.A. [Novosibirsk State University, Novosibirsk (Russian Federation); Rzhanov Institute of Semiconductor Physics, Novosibirsk (Russian Federation)

2016-06-01

Dielectric films of La{sub 2}O{sub 3}, HfO{sub 2}, and La{sub x}Hf{sub 1-x}O{sub y} were synthesized by metal-organic chemical vapor deposition. Structural, chemical, and luminescence properties of the films were studied using X-ray photoelectron spectroscopy, methods of X-ray diffraction and selected area electron diffraction, high-resolution transmission electron microscopy, and a cathodoluminescence technique. It was found that doping of hafnium oxide with lanthanum leads to the formation of a continuous series of solid solutions with a cubic structure. This process is accompanied by the formation of oxygen vacancies in the HfO{sub 2} lattice. Cathodoluminescence spectra of the La{sub x}Hf{sub 1-x}O{sub y}/Si films exhibited a wide band with the maximum near 2.4–2.5 eV, which corresponds to the blue emission. Quantum-chemical calculations showed that this blue band is due to oxygen vacancies in the HfO{sub 2} lattice. - Highlights: • HfO{sub 2} and solid solution La{sub x}Hf{sub 1-x}O{sub y} films were synthesized by MOCVD. • The continuous series of solid solutions with a cubic structure was formed at La doping of HfO{sub 2}. • Cathodoluminescence band at 2.4–2.5 eV is observed due to the oxygen vacancies in La{sub x}Hf{sub 1-x}O{sub y}. • The cathodoluminescence decreases in intensity when the La concentration increases.

Interaction of N-hydroxyurea with strong proton donors: HCl and HF

Science.gov (United States)

Sałdyka, Magdalena

2014-11-01

An infrared spectroscopic and MP2/6-311++G(2d,2p) study of strong hydrogen bonded complexes of N-hydroxyurea (NH2CONHOH) with hydrogen halides (HCl and HF) trapped in solid argon matrices is reported. 1:1 and 1:2 complexes between N-hydroxyurea and hydrogen chloride, hydrogen fluoride have been identified in the NH2CONHOH/HCl/Ar, NH2CONHOH/HF/Ar matrices, respectively; their structures were determined by comparison of the spectra with the results of calculations. In the 1:1 complexes, identified for both hydrogen halide molecules, the cyclic structure stabilized by the X-H⋯O and N-H⋯X bonds is present; for the NH2CONHOH⋯HF system another isomeric 1:1 complex is also observed. Two 1:2 complexes were identified for the N-hydroxyurea-hydrogen chloride system characterised by the Cl-H⋯O and N-H⋯Cl bonds. The results of the study evidence that N-hydroxyurea is an oxygen base in the gas-phase with the carbonyl group as the strongest proton acceptor centre in the molecule.

Thermoluminescence in films of HfO{sub 2}:Dy{sup +3}; Termoluminiscencia en peliculas de HfO{sub 2}:Dy{sup +3}

Energy Technology Data Exchange (ETDEWEB)

Ceron, P.; Rivera, T.; Guzman, J.; Montes, E.; Pelaez, A.; Rojas, B.; Guzman, D. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Legaria No. 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Azorin, J. [Universidad Autonoma Metropolitana, Unidad Iztapalapa, San Rafael Atlixco 186, Col. Vicentina, 09340 Mexico D. F. (Mexico); Paredes, L., E-mail: victceronr@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2014-08-15

In this work the thermoluminescence (TL) response of films of hafnium oxide polluted with dysprosium (HfO{sub 2}:Dy{sup +3}) that were irradiated in the near UV (200 nm - 400 nm). The films were deposited by means of the ultrasonics spray pyrolysis technique on a glass substrate, using different deposit temperatures (300 grades C - 600 grades C). The best TL emission corresponded to the prepared film to 450 grades C that was exposed to a spectral irradiation of 80 μJ/(cm{sup 2}-s) with a wave longitude of 240 nm. The TL response in function of the spectral irradiation was lineal in the studied interval (24 to 288 mJ/cm{sup 2}), several kinetic parameters were also calculated of the shine curve as depth of the trap (E), frequency factor (s) and order to the kinetics (b). The obtained results show that the films of HfO{sub 2}:Dy{sup +3} could be used as radiation monitor in the region of the near UV. (Author)

HF i dag

DEFF Research Database (Denmark)

Lindstrøm, Maria Duclos; Simonsen, Birgitte

2008-01-01

Notatet er lavet på baggrund af uddannelsesbiografiske dybdeinterviews med kursister på toårigt HF. Indenfor rammerne af en pilotundersøgelse identificerer notatet fire gennemgående profiler: De pragmatiske, de fagligt usikre, second chance-kursisterne, og de HF-kursister, som har HF som first...

Chemical changes of minerals trapped in the lichen Trapelia involuta. Implication for lichen effect on mobility of uranium and toxic metals

International Nuclear Information System (INIS)

Kasama, Takeshi; Murakami, Takashi; Ohnuki, Toshihiko

2002-01-01

To elucidate development of minerals trapped in a lichen, we examined the lichen Trapelia involuta growing directly on secondary uranyl minerals and U-enriched Fe oxide and hydroxide minerals. Sericite and other minerals in the underlying rock are trapped in the lichen T. involuta during its biological growth and chemically changed by lichen activities. The presence of chemically changed sericite accompanied by an Fe-bearing mineral in the lichen suggests that dissolution of sericite is promoted mainly by polysaccharides excreted by the lichen. Oxalic acid or lichen acids absent in the medulla may not play an important role in the dissolution. Our results suggest that lichens on metal-rich surface affect the mobility of uranium and other toxic metals through dissolution followed by trap of minerals from the underlying rock. (author)

Calcium Atom Trap for Atom Trap Mass Spectrometer

Energy Technology Data Exchange (ETDEWEB)

Ko, Kwang Hoon; Park, Hyun Min; Han, Jae Min; Kim, Taek Soo; Cha, Yong Ho; Lim, Gwon; Jeong, Do Young [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2012-05-15

Trace isotope analysis has been an important role in science, archaeological dating, geology, biology and nuclear industry. Artificially produced fission products such as Sr-90, Cs-135 and Kr-85 can be released to the environment when nuclear accident occurs and the reprocessing factory operates. Thus, the analysis of them has been of interest in nuclear industry. But it is difficult to detect them due to low natural abundance less then 10-10. The ultra-trace radio isotopes have been analyzed by the radio-chemical method, accelerator mass spectrometer, and laser based method. The radiochemical method has been used in the nuclear industry. But this method has disadvantages of long measurement time for long lived radioisotopes and toxic chemical process for the purification. The accelerator mass spectrometer has high isotope selectivity, but the system is huge and it has the isobar effects. The laser based method, such as RIMS (Resonance Ionization Mass Spectrometry) is a basically isobar-effect free method. Recently, ATTA (Atom Trap Trace Analysis), one of the laser based method, has been successfully demonstrated sufficient isotope selectivity with small system size. It has been applied for the detection of Kr-81 and Kr-85. However, it is not suitable for real sample detection, because it requires steady atomic beam generation during detection and is not allowed simultaneous detection of other isotopes. Therefore, we proposed the coupled method of Atom Trap and Mass Spectrometer. It consists of three parts, neutral atom trap, ionization and mass spectrometer. In this paper, we present the demonstration of the magneto-optical trap of neutral calcium. We discuss the isotope selective characteristics of the MOT (Magneto Optical Trap) of calcium by the fluorescence measurement. In addition, the frequency stabilization of the trap beam will be presented

Comparison of HfCl{sub 4}, HfI{sub 4}, TEMA-Hf, and TDMA-Hf as precursors in early growing stages of HfO{sub 2} films deposited by ALD: A DFT study

Energy Technology Data Exchange (ETDEWEB)

Cortez-Valadez, M. [Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-88, 83190 Hermosillo, Son. (Mexico); Fierro, C.; Farias-Mancilla, J.R. [Instituto de Ingeniería y Tecnología, Departamento de Física y Matemáticas, Universidad Autónoma de Ciudad Juárez, Av. del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); Vargas-Ortiz, A. [Universidad Autónoma de Sinaloa, Facultad de Ingeniería Mochis, Ciudad Universitaria, C.P. 81223 Los Mochis, Sinaloa (Mexico); Flores-Acosta, M. [Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-88, 83190 Hermosillo, Son. (Mexico); Ramírez-Bon, R. [Centro de Investigación y Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, 76001 Querétaro, Qro. (Mexico); Enriquez-Carrejo, J.L. [Instituto de Ingeniería y Tecnología, Departamento de Física y Matemáticas, Universidad Autónoma de Ciudad Juárez, Av. del Charro 450, Cd. Juárez C.P. 32310, Chihuahua (Mexico); and others

2016-06-15

Highlights: • Hafnium oxide growth on Si(100) by atomic layer deposition was simulated. • The interface structure was considered as silicate and silicide. • The interface was studied employing DFT. • TDMA-Hf precursor show better interface stability. - Abstract: The final structure of HfO{sub 2} films grown by atomic layer deposition (ALD) after reaction with OH{sup −} ions has been analyzed by DFT (density functional theory). The interaction of the precursors: HfCl{sub 4} (hafnium tetrachloride), HfI{sub 4} (hafnium tetraiodide), TEMA-Hf (tetrakis-ethylmethylamino hafnium), and TDMA-Hf (tetrakis-dimethylamino hafnium) with HO–H was studied employing the B3LYP (Becke 3-parameter, Lee–Yang–Parr) hybrid functional and the PBE (Perdew–Burke–Ernzerhof) generalized gradient functional. The structural evolution at the Si(100) surface has been analyzed by LDA (local density approximation). The structural parameters: bond length and bond angle, and the vibrational parameters for the optimized structures are also reported. The presence of hafnium silicate at the interface was detected. The infrared spectra and structural parameters obtained in this work agree with previously reported experimental results.

Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

International Nuclear Information System (INIS)

Li Yongliang; Xu Qiuxia

2010-01-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

Energy Technology Data Exchange (ETDEWEB)

Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

2014-08-15

The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

Mechanisms and selectivity for etching of HfO2 and Si in BCl3 plasmas

International Nuclear Information System (INIS)

Wang Chunyu; Donnelly, Vincent M.

2008-01-01

The authors have investigated plasma etching of HfO 2 , a high dielectric constant material, and poly-Si in BCl 3 plasmas. Etching rates were measured as a function of substrate temperature (T s ) at several source powers. Activation energies range from 0.2 to 1.0 kcal/mol for HfO 2 and from 0.8 to 1.8 kcal/mol for Si, with little or no dependence on source power (20-200 W). These low activation energies suggest that product removal is limited by chemical sputtering of the chemisorbed Hf or Si-containing layer, with a higher T s only modestly increasing the chemical sputtering rate. The slightly lower activation energy for HfO 2 results in a small improvement in selectivity over Si at low temperature. The surface layers formed on HfO 2 and Si after etching in BCl 3 plasmas were also investigated by vacuum-transfer x-ray photoelectron spectroscopy. A thin boron-containing layer was observed on partially etched HfO 2 and on poly-Si after etching through HfO 2 films. For HfO 2 , a single B(1s) feature at 194 eV was ascribed to a heavily oxidized species with bonding similar to B 2 O 3 . B(1s) features were observed for poly-Si surfaces at 187.6 eV (B bound to Si), 189.8 eV, and 193 eV (both ascribed to BO x Cl y ). In the presence of a deliberately added 0.5% air, the B-containing layer on HfO 2 is largely unaffected, while that on Si converts to a thick layer with a single B(1s) peak at 194 eV and an approximate stoichiometry of B 3 O 4 Cl

Sensitive and comprehensive detection of chemical warfare agents in air by atmospheric pressure chemical ionization ion trap tandem mass spectrometry with counterflow introduction.

Science.gov (United States)

Seto, Yasuo; Sekiguchi, Hiroshi; Maruko, Hisashi; Yamashiro, Shigeharu; Sano, Yasuhiro; Takayama, Yasuo; Sekioka, Ryoji; Yamaguchi, Shintaro; Kishi, Shintaro; Satoh, Takafumi; Sekiguchi, Hiroyuki; Iura, Kazumitsu; Nagashima, Hisayuki; Nagoya, Tomoki; Tsuge, Kouichiro; Ohsawa, Isaac; Okumura, Akihiko; Takada, Yasuaki; Ezawa, Naoya; Watanabe, Susumu; Hashimoto, Hiroaki

2014-05-06

A highly sensitive and specific real-time field-deployable detection technology, based on counterflow air introduction atmospheric pressure chemical ionization, has been developed for a wide range of chemical warfare agents (CWAs) comprising gaseous (two blood agents, three choking agents), volatile (six nerve gases and one precursor agent, five blister agents), and nonvolatile (three lachrymators, three vomiting agents) agents in air. The approach can afford effective chemical ionization, in both positive and negative ion modes, for ion trap multiple-stage mass spectrometry (MS(n)). The volatile and nonvolatile CWAs tested provided characteristic ions, which were fragmented into MS(3) product ions in positive and negative ion modes. Portions of the fragment ions were assigned by laboratory hybrid mass spectrometry (MS) composed of linear ion trap and high-resolution mass spectrometers. Gaseous agents were detected by MS or MS(2) in negative ion mode. The limits of detection for a 1 s measurement were typically at or below the microgram per cubic meter level except for chloropicrin (submilligram per cubic meter). Matrix effects by gasoline vapor resulted in minimal false-positive signals for all the CWAs and some signal suppression in the case of mustard gas. The moisture level did influence the measurement of the CWAs.

Features of Crystallization of Rapidly Quenched Ni45Ti32Hf18Cu5 and Ni25Ti32Hf18Cu25 Alloys from Melt with High-Temperature Shape Memory Effect

Science.gov (United States)

Pushin, A. V.; Pushin, V. G.; Kuntsevich, T. E.; Kuranova, N. N.; Makarov, V. V.; Uksusnikov, A. N.; Kourov, N. I.

2017-12-01

A comparative study of the structure and the chemical and phase composition of Ni45Ti32Hf18Cu5 and Ni25Ti32Hf18Cu25 amorphous alloys obtained by fast-quenching of melt stream by spinning has been carried out by transmission and scanning electron microscopy and X-ray diffraction. The critical temperatures of their devitrification were determined by the data of temperatures measurements of electrical resistance. The features of the formation of ultrafine structure and the phase transformation at the vitrification depending on the regimes of heat treatment and chemical composition of alloy have been established.

Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

Science.gov (United States)

Kubo, Toshiharu; Egawa, Takashi

2017-12-01

HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

Nematode-Trapping Fungi.

Science.gov (United States)

Jiang, Xiangzhi; Xiang, Meichun; Liu, Xingzhong

2017-01-01

Nematode-trapping fungi are a unique and intriguing group of carnivorous microorganisms that can trap and digest nematodes by means of specialized trapping structures. They can develop diverse trapping devices, such as adhesive hyphae, adhesive knobs, adhesive networks, constricting rings, and nonconstricting rings. Nematode-trapping fungi have been found in all regions of the world, from the tropics to Antarctica, from terrestrial to aquatic ecosystems. They play an important ecological role in regulating nematode dynamics in soil. Molecular phylogenetic studies have shown that the majority of nematode-trapping fungi belong to a monophyletic group in the order Orbiliales (Ascomycota). Nematode-trapping fungi serve as an excellent model system for understanding fungal evolution and interaction between fungi and nematodes. With the development of molecular techniques and genome sequencing, their evolutionary origins and divergence, and the mechanisms underlying fungus-nematode interactions have been well studied. In recent decades, an increasing concern about the environmental hazards of using chemical nematicides has led to the application of these biological control agents as a rapidly developing component of crop protection.

Effect of ozone treatment on the optical and electrical properties of HfSiO thin films

International Nuclear Information System (INIS)

Geng, Yang; Yang, Wen; Zhu, Shang-Bin; Zhang, Yuan; Sun, Qing-Qing; Lu, Hong-Liang; Zhang, David Wei

2014-01-01

The effect of room temperature ozone oxidation treatment on thin HfSiO film grown by atomic layer deposition (ALD) has been investigated. The optical and electrical properties with different post-ozone oxidation time were characterized. The evolution of ozone interacting with HfSiO films was clearly illuminated. Ozone can repair the lossy chemical bonds and vacancies, resulting in the improvement of packing density and polarizability of HfSiO films. With more ozone entering the HfSiO films, the refractive index, dielectric constant, and interfacial properties can be greatly upgraded. Furthermore, the frequency dispersion of ALD-HfSiO film can be improved after O 3 treatment time for 8 min. (orig.)

Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

Directory of Open Access Journals (Sweden)

Chin-Sheng Pang

2014-04-01

Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

Study of the properties of internal oxidized Cu - Al - Ti - Hf alloys

International Nuclear Information System (INIS)

Solopov, V.I.; Daneliya, E.P.; Daneliya, G.V.; Lebasova, O.P.

1982-01-01

Investigation results of mechanical properties and electric conductivity of rods of internally oxidized alloys Cu-Al-Ti-Hf depending on chemical composition, varying in the limits ensuring the formation of disperse enough and evenly distributed over the volume oxide phase. (0-1%Al, 0-0.5%Ti, 0-0.3%Hf, the restcopper), in the process of internal oxidation are presented. Internally oxidized alloys Cu-Al-Ti-Hf have increased strength properties with insignificant increase of specific electric resistance as compared with the known internally oxidized alloys Cu-Al. At that, the best combination of physicomechanical properties is achieved at small contents of titanium (0.01-0.05%) and hafnium (0.01-0.1%)

Analysis of chemical bond states and electrical properties of stacked AlON/HfO{sub 2} gate oxides formed by using a layer-by-layer technique

Energy Technology Data Exchange (ETDEWEB)

Choi, Wonjoon; Lee, Jonghyun; Yang, Jungyup; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh; Byun, Byungsub; Kim, Moseok [Hanyang University, Seoul (Korea, Republic of)

2006-06-15

Stacked AlON/HfO{sub 2} thin films for gate oxides in metal-oxide-semiconductor devices are successfully prepared on Si substrates by utilizing a layer-by-layer technique integrated with an off-axis RF remote plasma sputtering process at room temperature. This off-axis structure is designed to improve the uniformity and the quality of gate oxide films. Also, a layer-by-layer technique is used to control the interface layer between the gate oxide and the Si substrate. The electrical properties of our stacked films are characterized by using capacitance versus voltage and leakage current versus voltage measurements. The stacked AlON/HfO{sub 2} gate oxide exhibits a low leakage current of about 10{sup -6} A/cm{sup 2} and a high dielectric constant value of 14.26 by effectively suppressing the interface layer between gate oxide and Si substrate. In addition, the chemical bond states and the optimum thickness of each AlON and HfO{sub 2} thin film are analyzed using X-ray photoemission spectroscopy and transmission electron microscopy measurement.

Sorption behaviour of W, Hf, Lu, U, and Th on ion exchangers from HCl/H2O2 solutions. Model experiments for chemical studies of seaborgium (Sg)

International Nuclear Information System (INIS)

Schumann, D.; Andrassy, M.; Nitsche, H.; Misiak, R.; Schaedel, M.; Bruechle, W.; Schausten, B.; Kratz, J.V.

1997-08-01

In model experiments with W, Hf, Th, and U radionuclides, a chemical system was developed for the separation of seaborgium from element 104 and heavy actinides, i.e., cation exchange on DOWEX 50 x 8 from solutions containing 0.1-1.0 M HCl and 0.5-2.0 vol.% H 2 O 2 . The system should be suitable for fast on-line experiments if seaborgium exibits a non-uranium-like behaviour. Adding hydrogen peroxide to mixed HCl/HF solutions suppresses the partial sorption of W and, presumably seaborgium, on the cation exchanger. This way, the elution volume can be minimized. Prospects for anion exchange separations of group 6 from 4 elements are also briefly discussed. (orig.)

SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

Science.gov (United States)

Yongliang, Li; Qiuxia, Xu

2010-03-01

The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

HF-laser program

International Nuclear Information System (INIS)

Anon.

1978-01-01

Sandia's HF-laser program for FY 77 and FY 78 was revised in June 1977 in order to meet several new program milestones. Research progress is reported on: objective of HF oscillator-amplifier studies using H 2 -F 2 gas mixtures; characteristics of large-volume oscillator using H 2 -F 2 mixtures; characteristics of large-volume amplifier using H 2 -F 2 mixtures; experimental results of the oscillator-amplifier study; objective of high-quality discharge-initiated SF 6 -HI oscillator-preamplifier system; pin-discharge-initiated oscillator and first beam expander; fast-discharge-initiated preamplifiers; reflecting beam expanders for oscillator-preamplifier system; beam quality of discharge-initiated oscillator-preamplifier system; short pulse option for discharge initiated SF 6 -HI system; H 2 -F 2 electron-beam-initiated oscillator-preamplifier system; chamber for HF-laser focusing experiments; computer study of parasitic oscillations in HF amplifiers and oscillators; kinetics upgrade of HF-laser code; repetitivey ignited flowing H 2 -F 2 -O 2 mixtures; spontaneous detonations in multiatmosphere H 2 -F 2 -O 2 mixtures; high-pressure H 2 -F 2 laser studies; and time sequenced energy extraction on the high xenon laser

Anion exchange behaviour of Zr, Hf, Nb, Ta and Pa as homologues of RF and Db in fluoride medium

International Nuclear Information System (INIS)

Monroy G, F.; Trubert, D.; Brillard, L.; Hussonnois, M.; Constantinescu, O.; Le Naour, C.

2010-01-01

Studies of the chemical property of trans actinide elements are very difficult due to their short half-lives and extremely small production yields. However it is still possible to obtain considerable information about their chemical properties, such as the most stable oxidation states in aqueous solution, complexing ability, etc., comparing their behaviour with their lighter homologous in the periodic table. In order to obtain a better knowledge of the behaviour of rutherfordium, RF (element 104), dub nium, Db (element 105) in HF medium, the sorption properties of Zr, Hf, Nb, Ta an Pa, homologues of RF and Db, were studied in NH 4 F/HClO 4 medium in this work. Stability constants of the fluoride complexes of these elements were experimentally obtained from K d obtained at different F - and H + concentrations. The anionic complexes: [Zr(Hf)F 5 ] - , [Zr(Hf)F 6 ] 2- , [Zr(Hf)F 7 ] 3- , [Ta(Pa)F 6 ] - , [Ta(Pa)F 7 ] 2- , [Ta(Pa)F 8 ] 3- , [NbOF 4 ] - and [NbOF 5 ] 2- are present as predominant species in the HF range over investigation. (Author)

Determination of the rate of HF hydration and the effects of HF on moisture condensation

International Nuclear Information System (INIS)

McCulla, W.H.

1982-01-01

There were four basic questions addressed in this report that relate to the HF interaction in the environment. As to whether HF hydrates in the vapor phase and what the rate of that hydration is, there seems ample evidence that HF hydrates readily in the vapor phase and the rate of that hydration is very fast, i.e., dHF/dt greater than or equal to 25 torr sec -1 . Concerning under what conditions condensation of the hydrate will occur and whether a third body is required for condensation, it was found that HF does effect the dew point or condensation of water and data was presented indicating the extent of that effect. It was also determined that condensation will occur without a third body present. Thus, in attempting to model an HF release for the Safety Analysis Report the hydration of HF and the subsequent heat released may be treated as occurring instantaneously; but the ultimate disposition of the HF will be strongly dependent upon the environmental conditions at the time of the release

Determination of the rate of HF hydration and the effects of HF on moisture condensation

Energy Technology Data Exchange (ETDEWEB)

McCulla, W H

1982-04-30

There were four basic questions addressed in this report that relate to the HF interaction in the environment. As to whether HF hydrates in the vapor phase and what the rate of that hydration is, there seems ample evidence that HF hydrates readily in the vapor phase and the rate of that hydration is very fast, i.e., dHF/dt greater than or equal to 25 torr sec/sup -1/. Concerning under what conditions condensation of the hydrate will occur and whether a third body is required for condensation, it was found that HF does effect the dew point or condensation of water and data was presented indicating the extent of that effect. It was also determined that condensation will occur without a third body present. Thus, in attempting to model an HF release for the Safety Analysis Report the hydration of HF and the subsequent heat released may be treated as occurring instantaneously; but the ultimate disposition of the HF will be strongly dependent upon the environmental conditions at the time of the release.

High-K rotational bands in {sup 174}Hf and {sup 175}Hf

Energy Technology Data Exchange (ETDEWEB)

Gjoerup, N L; Sletten, G [The Niels Bohr Institute, Roskilbe (Denmark); Walker, P M [Surrey Univ., Guildford (United Kingdom). Dept. of Physics; Bentley, M A [Daresbury Lab. (United Kingdom); Cullen, D M; Sharpey-Schafer, J F; Fallon, P; Smith, G [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.

1992-08-01

High sensitivity experiments with {sup 48}Ca, {sup 18}O and {sup 9}Be induced reactions using the ESSA-30, TESSA-3 and NORDBALL arrays have provided extensive new information on the high spin level structures of {sup 174}Hf and {sup 175}Hf. During the series of experiments, several new bands have been found and most known bands have been extended considerably. Spin and excitation energy ranges for {sup 174}Hf are now {approx} 35 {Dirac_h} and {approx} 13 MeV, respectively, and for {sup 175}Hf ranges are {approx} 30 {Dirac_h} and {approx} 7 MeV. respectively. Several new high-K structures have been found in {sup 174}Hf and the structure of these and the already known high-K bands in both nuclei together with the new Tilted Axis Cranking approach might explain the small K-hindrances observed for K-isomers in this region. (author). 8 refs., 2 figs.

Effect of CH3COOH on Hydrometallurgical Purification of Metallurgical-Grade Silicon Using HCl-HF Leaching

Science.gov (United States)

Tian, Chunjin; Lu, Haifei; Wei, Kuixian; Ma, Wenhui; Xie, Keqiang; Wu, Jijun; Lei, Yun; Yang, Bin; Morita, Kazuki

2018-04-01

The present study investigated the effects of adding CH3COOH to HCl and HF used to purify metallurgical-grade Si (MG-Si). After 6 h of leaching MG-Si with an acid mixture consisting of 4 mol L-1 HCl, 3 mol L-1 HF, and 3 mol L-1 CH3COOH at 348 K, the total impurity removal efficiency was 88.5%, exceeding the 81.5% removal efficiency obtained without addition of CH3COOH. The microstructural evolution of Si after etching with the two lixiviants indicated better dissolution of metal impurities in MG-Si when using the HCl-HF-CH3COOH mixture. Furthermore, the leaching kinetics of Fe using the HCl-HF and HCl-HF-CH3COOH mixtures were observed to depend on the interfacial chemical reactions.

Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

Science.gov (United States)

Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

2016-05-01

This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

Beta decomposition processes in Hf-rich Hf--Nb alloys

International Nuclear Information System (INIS)

Jones, W.B.; Taggart, R.; Polonis, D.H.

1978-01-01

The decomposition of the bcc β-phase by both athermal and isothermal processes has been investigated in Hf-rich Hf--Nb alloys. An all β-phase structure is retained in chill-cast alloys containing 30 to 50 at.% Nb (Cb), although electron diffraction streaking effects and the behavior of the temperature coefficient of electrical resistivity indicate the presence of a bcc lattice instability similar to that reported in solute lean Ti and Zr alloys. Aging a Hf 0 . 65 Nb 0 . 35 alloy at 400 and 600 0 C resulted in the direct precipitation of a fine dispersion of α-phase needles; this morphology differs from the discs of transition α (α/sub t/) which Carpenter et al observed in Nb-rich Nb 0 . 68 Hf 0 . 32 . During continued aging, the needles grow selectively to form colonies or groups of needles in which both the individual needles and the groups of needles have major axes aligned along (110)/sub β/ type directions. The initial α-phase particles exhibit the Burgers orientation relationship with the parent matrix; continued aging changes the electron diffraction patterns in a way that is similar to that observed in aged Ti--Mo and Ti--Mo--Al alloys where they were attributed to the α-phase having a different crystallographic relationship to the β-phase (Type 2 α-phase). The observed changes in the electron diffraction patterns of aged Hf 0 . 65 Nb 0 . 35 cannot be described as resulting from strained Burgers α-phase

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Energy Technology Data Exchange (ETDEWEB)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena, E-mail: vmisra@ncsu.edu [Department of Electrical and Computer Engineering, North Carolina State University, 2410 Campus Shore Drive, Raleigh, North Carolina 27695 (United States)

2015-06-15

Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps with a variety of ALD dielectrics. High-k dielectrics (HfO{sub 2}, HfAlO, and Al{sub 2}O{sub 3}) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO{sub 2} shows the lowest interface trap density (<2 × 10{sup 12 }cm{sup −2}) after annealing above 600 °C in N{sub 2} for 60 s. The trend in observed trap densities is subsequently explained with bonding constraint theory, which predicts a high density of interface traps due to a higher coordination state and bond strain in high-k dielectrics.

High resolution TDPAC measurements on 181Ta in Hf2Fe, Hf2Co and Hf2Rh at high temperature

International Nuclear Information System (INIS)

Cekic, B.; Koicki, S.; Ivanovic, N.; Manasijevic, M.; Koteski, V.; Marjanovic, D.

1998-01-01

The time differential perturbed angular correlation measurements (TDPAC-method ) on 181 Ta ion probe in Hf 2 Co, Hf 2 Fe and Hf 2 Rh intermetallic compounds have been performed at 1170 K, using a fast - slow time spectrometer consisting of two BaF 2 detectors. The results of the measurements show the presence of two independent electric quadrupole interactions, compatible with the crystalline structure of these polycrystalline compounds. (authors)

Electron trapping in the electrosound solitary wave for propagation of high intensity laser in a relativistic plasma

International Nuclear Information System (INIS)

Heidari, E; Aslaninejad, M; Eshraghi, H

2010-01-01

Using a set of relativistic equations for plasmas with warm electrons and cold ions, we have investigated the effects of trapped electrons in the propagation of an electrosound wave and discussed the possibility of the formation of electromagnetic solitons in a plasma. The effective potential energy and deviations of the electron and ion number densities in this relativistic model have been found. We have obtained the governing equations for the amplitude of the HF field with relativistic corrections. In order to show the destructive impact of the trapped electrons on the solitary wave, a relativistic effective potential and the governing equation have been found. It is shown that for certain values of the parameters the condition of localization of the HF amplitude is violated. In addition, it is shown that as the flow velocity of the plasma changes, the shape of the solitary wave shows two opposing behaviours, depending on whether the solitary wave velocity is larger than the flow velocity or smaller. Also, the existence of stationary solitary waves which are prohibited for nonrelativistic plasma has been predicted. Finally, we have obtained the Korteweg-de Vries equation showing the relativistic, trapping and nonlinearity effects.

Isothermal cross-sections of Hf-Sc-Ga(800 deg C) and Hf-Ti-Ga (750 deg C) phase diagrams

International Nuclear Information System (INIS)

Markiv, V.Ya.; Belyavina, N.N.

1981-01-01

Isothermal cross sections of Hf-Sc-Ga (800 deg C) and Hf-Ti-Ga (750 deg C) state diagrams are plotted. The existence of two ternary Hfsub(0.1-0.8)Scsub(0.9)-sub(0.2)Ga and Hfsub(0.8)Scsub(0.2)Gasub(3) phases is stated in the Hf-Sc-Ga system. The crystal structure of these compounds investigated by the powder method belongs to the structural α-MoB and ZrAl 3 types respectively. Continuous rows of (Hf, Sc 5 Ga 5 , (Hf, Ti)Ga 3 and (Hf, Ti)Ga 2 solid solutions are formed in the investigated systems. Essential quantity of the third component dissolve binary Sc 5 Ga 4 , Sc 2 Ga 3 (15 and 30 at % Hf respectively), Hf 5 Ga 4 , HfGa 2 (20, 10 at. % Sc), Hf 5 Ga 4 , HfGa, Hf 5 Ga 3 , Hf 2 Ga 3 (48, 30, 46, 20 at. % Ti) gallides [ru

Concerning the trapping of positrons in ionic solids

International Nuclear Information System (INIS)

Kunz, A.B.; Waber, J.T.

1982-01-01

The total energy of several ionic crystals which contain lattice defects plus a positron were studied in the Hartree-Fock limit. Large uncontracted basis sets of GTO's were used to ensure binding if it would occur. Specifically, the attraction of a positron to a cation vacancy was sought for alkali halides as well as for nickel oxide. While the binding energy to nickel oxide was 8.1 eV, there was very little tendency for the positron to be trapped in the alkali halides. The trapping at a Vsub(k) site was also investigated using similar restricted HF approximation with large sets of GTO's. This defect in LiF was shown to be stable by 0.73 eV, by itself but was unable to bind a positron. These two results are not compatible with qPs being localized in such crystals. (Auth.)

Preparation, structure and properties of hafnium compounds in the system Hf-C-N-O

International Nuclear Information System (INIS)

Brundiers, G.D.

1975-08-01

Highly dense, homogenous and single phase hafnium carbonitride samples (with low oxygen content) were prepared in the whole concentration range of the ternary cubic carbonitrides. Stoichiometric hafnium oxicarbides were also prepared within the range of solubility. The procedure involved the hot pressing of powders of HfC, HfN, Hf, Hf-Oxide and carbon at temperatures of 3,000 0 C and pressures up to 550 kpf/cm 2 using a novel technique. Small single crystals of slightly substoichiometric HfN were also repared. The densification of the powders was studied as a function of the non-metal concentration. Carbonitrides with N/Hf ratio of 0.37 were prepared in a high temperature autoclave operating at medium pressures by the reaction of HfC with nitrogen. All the samples were characterized by density measurements, chemical, X-ray and metallographic analysis and in some cases with the aid of quantitative metallography and microprobe analysis. Typical properties investigated were lattice parameter, thermal expansion, microhardness and electrical resistivity as function of the non-metal content. For specific concentrations extreme values in the properties are attained. With the aid of the valence electron concentration (VEC) parameter, the properties can be correlated with the density of states of electrons at the Fermi level. (orig./HK) [de

High-temperature x-ray diffraction study of HfTiO4-HfO2 solid solutions

International Nuclear Information System (INIS)

Carpenter, D.A.

1975-01-01

High-temperature x-ray diffraction techniques were used to determine the axial thermal expansion curves of HfTiO 4 -HfO 2 solid solutions as a function of composition. Data show increasing anisotropy with increasing HfO 2 content. An orthorhombic-to-monoclinic phase transformation was detected near room temperature for compositions near the high HfO 2 end of the orthorhombic phase field and for compositions within the two-phase region (HfTiO 4 solid solution plus HfO 2 solid solution). An orthorhombic-to-cubic phase transformation is indicated by data from oxygen-deficient materials at greater than 1873 0 K. (U.S.)

Self-diffusion of Er and Hf inpure and HfO2-doped polycrystalline Er2O3

International Nuclear Information System (INIS)

Scheidecker, R.W.

1979-01-01

Using a tracer technique, self-diffusion of Er and Hf was measured over the approximate temperature interval of 1600 to 1970 0 C in pure and HfO 2 -doped polycryatalline Er 2 O 3 . Up to about 10 m/o HfO 2 dopant level, the Er self-diffusion coefficients followed a relationship based on cation vacancies. Above 10 m/o HfO 2 , deviation from this relationship occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnia ion. The activation energy for the self-diffusion of Er in pure Er 2 O 3 was 82.2 Kcal/mole and increased with the HfO 2 dopant level present. Self-diffusion of Hf was measured in pure Er 2 O 3 having two impurity levels, and a separation of the grain boundary. The volume diffusion of Hf showed both extrinsic and intrinsic behavior with the transition temperature increasing with the impurity level present in Er 2 O 3 . The activation energy for Hf volume diffusion in the intrinsic region was high, i.e. 235 -+ 9.5 Kcal/mole. The grain boundary diffusion was apparently extrinsic over the entire temperature interval Very low Hf self diffusion rates were found in both pure and HfO 2 doped Er 2 O 3 compositions. Despite a clustering effect, the HfO 2 dopant increased the Hf volume diffusion coefficients

Mapping hyperfine fields with Hf in EuTiO3 by time differential perturbed angular correlation

CERN Document Server

Rano, Borak Ur Rahman

2017-01-01

Using time differential perturbed angular correlation of γ rays, we investigated the electric field gradient for different annealing of defects and local oxygen configuration with Hf as a probe in EuTiO3. The measurements were performed at ISOLDE-CERN. The results, combined with ab-initio calculations, support the assumption that the electric field gradient for this system is determined by the trapping of defects for different charge states of Eu.

High-k shallow traps observed by charge pumping with varying discharging times

International Nuclear Information System (INIS)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

2013-01-01

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO 2 /metal gate stacks. N T -V high level characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N T for extra contribution of I cp traps. N T is the number of traps, and I cp is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I cp traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti x N 1−x metal gate concentrations. Next, N T -V high level characteristic curves with different falling times (t falling time ) and base level times (t base level ) show that extra contribution of I cp traps decrease with an increase in t falling time . By fitting discharge formula for different t falling time , the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t falling time . This current cannot be measured by the charge pumping technique. Subsequent measurements of N T by charge pumping technique at t base level reveal a remainder of electrons trapped in high-k bulk shallow traps

Anion exchange behaviour of Zr, Hf, Nb, Ta and Pa as homologues of RF and Db in fluoride medium

Energy Technology Data Exchange (ETDEWEB)

Monroy G, F. [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Trubert, D.; Brillard, L.; Hussonnois, M.; Constantinescu, O.; Le Naour, C., E-mail: fabiola.monroy@inin.gob.m [Institut de Physique Nucleaire, F-91406 Orsay, France (France)

2010-07-01

Studies of the chemical property of trans actinide elements are very difficult due to their short half-lives and extremely small production yields. However it is still possible to obtain considerable information about their chemical properties, such as the most stable oxidation states in aqueous solution, complexing ability, etc., comparing their behaviour with their lighter homologous in the periodic table. In order to obtain a better knowledge of the behaviour of rutherfordium, RF (element 104), dub nium, Db (element 105) in HF medium, the sorption properties of Zr, Hf, Nb, Ta an Pa, homologues of RF and Db, were studied in NH{sub 4}F/HClO{sub 4} medium in this work. Stability constants of the fluoride complexes of these elements were experimentally obtained from K{sub d} obtained at different F{sup -} and H{sup +} concentrations. The anionic complexes: [Zr(Hf)F{sub 5}]{sup -}, [Zr(Hf)F{sub 6}]{sup 2-}, [Zr(Hf)F{sub 7}]{sup 3-}, [Ta(Pa)F{sub 6}]{sup -}, [Ta(Pa)F{sub 7}]{sup 2-}, [Ta(Pa)F{sub 8}]{sup 3-}, [NbOF{sub 4}]{sup -} and [NbOF{sub 5}]{sup 2-} are present as predominant species in the HF range over investigation. (Author)

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

International Nuclear Information System (INIS)

Yurchuk, Ekaterina

2015-01-01

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

Energy Technology Data Exchange (ETDEWEB)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

International Nuclear Information System (INIS)

Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

2006-01-01

To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

Effect of various nitrogen flow ratios on the optical properties of (Hf:N-DLC films prepared by reactive magnetron sputtering

Directory of Open Access Journals (Sweden)

Meng Qi

2017-08-01

Full Text Available Hf and N co-doped diamond-like carbon [(Hf:N-DLC] films were deposited on 316L stainless steel and glass substrates through reactive magnetron sputtering of hafnium and carbon targets at various nitrogen flow ratios (R=N2/[N2+CH4+Ar]. The effects of chemical composition and crystal structure on the optical properties of the (Hf:N-DLC films were studied. The obtained films consist of uniform HfN nanocrystallines embedded into the DLC matrix. The size of the graphite clusters with sp2 bonds (La and the ID/IG ratio increase to 2.47 nm and 3.37, respectively, with increasing R. The optical band gap of the films decreases from 2.01 eV to 1.84 eV with increasing R. This finding is consistent with the trends of structural transformations and could be related to the increase in the density of π-bonds due to nitrogen incorporation. This paper reports the influence of nitrogen flow ratio on the correlation among the chemical composition, crystal structure, and optical properties of (Hf:N-DLC films.

MoS{sub 2} on an amorphous HfO{sub 2} surface: An ab initio investigation

Energy Technology Data Exchange (ETDEWEB)

Scopel, W. L., E-mail: wlscopel@if.uff.br [Departamento de Física, Universidade Federal do Espírito Santo, Vitória, Brazil and Departamento de Ciências Exatas, Universidade Federal Fluminense, Volta Redonda, Rio de Janerio (Brazil); Miwa, R. H., E-mail: hiroki@infis.ufu.br; Schmidt, T. M., E-mail: tome@infis.ufu.br [Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, Minas Gerais (Brazil); Venezuela, P., E-mail: vene@if.uff.br [Instituto de Física, Universidade Federal Fluminense, Niterói, Rio de Janerio (Brazil)

2015-05-21

The energetic stability, electronic and structural properties of MoS{sub 2} adsorbed on an amorphous a-HfO{sub 2} surface (MoS{sub 2}/HfO{sub 2}) are examined through ab initio theoretical investigations. Our total energy results indicate that the formation of MoS{sub 2}/HfO{sub 2} is an exothermic process with an adsorption energy of 34 meV/Å{sup 2}, which means that it is more stable than similar systems like graphene/HfO{sub 2} and MoS{sub 2}/SiO{sub 2}. There are no chemical bonds at the MoS{sub 2}-HfO{sub 2} interface. Upon formation of MoS{sub 2}/HfO{sub 2}, the electronic charge distribution is mostly localized at the interface region with no net charge transfer between the adsorbed MoS{sub 2} sheet and –HfO{sub 2} surface. However, the MoS{sub 2} sheet becomes n-type doped when there are oxygen vacancies in the HfO{sub 2} surface. Further investigation of the electronic distribution reveals that there are no electron- and hole-rich regions (electron-hole puddles) on the MoS{sub 2} sheet, which makes this system promising for use in high-speed nanoelectronic devices.

Effect of Chemical Ratios of a Microbial-Based Feeding Attractant on Trap Catch of Drosophila suzukii (Diptera: Drosophilidae).

Science.gov (United States)

Cha, Dong H; Landolt, Peter J; Adams, Todd B

2017-08-01

Drosophila suzukii Matsumura, spotted wing drosophila, can be trapped with a feeding attractant based on wine and vinegar volatiles and consisting of acetic acid, ethanol, acetoin, and methionol. Using that four-component blend, we found that the catch of spotted wing drosophila increased with increases in the release rate of acetoin (from 0.5 mg/d to 34 mg/d) from polyethylene sachet dispensers, and with increases in the concentrations of acetic acid (from 0.25% to 4%) or ethanol (from 0.08% to 2%) when dispensed in the trap drowning solution. However, we saw no increase in spotted wing drosophila trapped with increase of the methionol release rate from 0.4 mg/d to 4.9 mg/d or from 0.19 mg/d to 0.8 mg/d, from sachets. A new formulation based on optimized amounts of these four chemicals yielded a doubling of spotted wing drosophila trapped compared to a previously reported formulation. Further field testing confirmed that the simultaneous increases in the release rate of acetoin from a dispenser and the amount of acetic acid in the trap drowning solution provided the increased spotted wing drosophila trap response to the new formulation. These findings provide a practical means to improve the power of this lure to detect and monitor D. suzukii. Published by Oxford University Press on behalf of Entomological Society of America 2017. This work is written by US Government employees and is in the public domain in the US.

DIRECT DETERMINATION OF THE HF/H{sub 2} ABUNDANCE RATIO IN INTERSTELLAR GAS

Energy Technology Data Exchange (ETDEWEB)

Indriolo, Nick; Neufeld, D. A. [Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD 21218 (United States); Seifahrt, A. [Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637 (United States); Richter, M. J. [Department of Physics, University of California Davis, Davis, CA 95616 (United States)

2013-02-20

We report the first detection of the v = 1-0, R(0) ro-vibrational transition of HF at 2.499385 {mu}m arising from interstellar gas. The line is seen in absorption toward three background sources-HD 154368, Elias 29, and AFGL 2136 IRS 1-all of which have reported H{sub 2} column densities determined from observations of H{sub 2}. This allows for the first direct determination of the HF/H{sub 2} abundance ratio. We find values of N(HF)/N(H{sub 2}) = 1.15 Multiplication-Sign 10{sup -8} and 0.69 Multiplication-Sign 10{sup -8} for HD 154368 and Elias 29, respectively. The sight line toward AFGL 2136 IRS 1 also shows absorption from the v = 1-0, R(1) transition of HF, indicating warm, dense (n {sub H} {approx}> 10{sup 9} cm{sup -3}) gas, likely very close to the central protostar. Ascribing portions of the HF absorption to warm and cold gas, we find N(HF)/N(H{sub 2}) = (1.7-2.9) Multiplication-Sign 10{sup -8} and (0.33-0.58) Multiplication-Sign 10{sup -8} for the two components, respectively. Except for the warm component toward AFGL 2136 IRS 1, all observed HF/H{sub 2} ratios are well below N(HF)/N(H{sub 2}) = 3.6 Multiplication-Sign 10{sup -8}, the value predicted if nearly all gas phase fluorine is in the form of HF. Models of fluorine chemistry that account for depletion onto grains are able to reproduce the results toward HD 154368, but not in the cold, dense gas toward AFGL 2136 IRS 1 and Elias 29. Most likely, some combinations of simplifying assumptions made in the chemical models are responsible for these discrepancies.

Hydrodynamic properties and distribution of bait downstream of a zooplankton trap

DEFF Research Database (Denmark)

Selander, Erik; Heuschele, Jan; Larsson, Ann I.

2017-01-01

The flow regime around a chemically baited trap is crucial for the trapping process and distribution of bait downstream of traps. We measured the flow field downstream of a trap prototype in flume experiments and mapped the distribution of bait using laser induced fluorescence. The trap produced ...

Trapping of deuterium dissolved in fluidized Li by Y

Energy Technology Data Exchange (ETDEWEB)

Fukada, Satoshi, E-mail: sfukada@nucl.kyushu-u.ac.jp [Kyushu University, Fukuoka 816-8580 (Japan); Hiromoto, Tetsushi; Shigeharu, Satoshi; Sugie, Kunihiro [Kyushu University, Fukuoka 816-8580 (Japan); Edao, Yuki [Japan Atomic Energy Agency, Tokai 319-1195 (Japan)

2014-10-15

Highlights: • Recovery of deuterium is experimentally proved in liquid Li forced convection flow by Y metal trap. • 10 ppm D as the target concentration is successfully removed from Li flow. • H{sub 2}O or HNO{sub 3} dissolution technique is developed to analyze D concentration in Li or Y. - Abstract: Recovery of D dissolved in a liquid Li flow at low D concentration is experimentally investigated using a Y metal absorber under the two fluidized conditions: (a) in a vertical cylindrical tube and (b) in an agitated vessel. The target concentration is 1 appm in Li around at 300 °C. The two concentrations of D remaining in Li and recovered by Y are detected by a dissolution method using H{sub 2}O with depleted-D and HNO{sub 3}. The main released species is HD. A small amount of HDO released is reduced to HD by a Mg particle bed. It is found that HF-treated Y can absorb H isotopes at the target temperature and concentration. The chemical dissolution technique is found to be useful to specify the two absolute concentrations of D recovered by Y and D remaining in Li.

Trapping of deuterium dissolved in fluidized Li by Y

International Nuclear Information System (INIS)

Fukada, Satoshi; Hiromoto, Tetsushi; Shigeharu, Satoshi; Sugie, Kunihiro; Edao, Yuki

2014-01-01

Highlights: • Recovery of deuterium is experimentally proved in liquid Li forced convection flow by Y metal trap. • 10 ppm D as the target concentration is successfully removed from Li flow. • H 2 O or HNO 3 dissolution technique is developed to analyze D concentration in Li or Y. - Abstract: Recovery of D dissolved in a liquid Li flow at low D concentration is experimentally investigated using a Y metal absorber under the two fluidized conditions: (a) in a vertical cylindrical tube and (b) in an agitated vessel. The target concentration is 1 appm in Li around at 300 °C. The two concentrations of D remaining in Li and recovered by Y are detected by a dissolution method using H 2 O with depleted-D and HNO 3 . The main released species is HD. A small amount of HDO released is reduced to HD by a Mg particle bed. It is found that HF-treated Y can absorb H isotopes at the target temperature and concentration. The chemical dissolution technique is found to be useful to specify the two absolute concentrations of D recovered by Y and D remaining in Li

Clinical trials update from the Heart Failure Society of America Meeting 2009: FAST, IMPROVE-HF, COACH galectin-3 substudy, HF-ACTION nuclear substudy, DAD-HF, and MARVEL-1.

Science.gov (United States)

Lainscak, Mitja; Coletta, Alison P; Sherwi, Nasser; Cleland, John G F

2010-02-01

This article presents findings and a commentary on late-breaking trials presented during the meeting of the Heart Failure Society of America in September 2009. Unpublished reports should be considered as preliminary, since analyses may change in the final publication. The FAST trial showed somewhat better performance of intrathoracic impedance for prediction of deterioration in patients with heart failure (HF) when compared with daily weighing. The IMPROVE-HF study reported the benefits of education on the management of patients with systolic HF. Galectin-3 appeared a useful method for improving risk stratification of patients with chronic HF in a substudy of the COACH trial. A nuclear substudy of the HF-ACTION trial failed to demonstrate that resting myocardial perfusion imaging, a measure of myocardial scar and viability, was clinically useful. A small randomized controlled trial (DAD-HF) suggested that the use of low-dose dopamine in patients with acutely decompensated HF was associated with less deterioration in renal function and less hypokalaemia. The MARVEL-1 trial raises further concerns about the safety of myoblast transplantation in ischaemic HF.

Effect of Chemical Composition on The Microstructure and High-Temperature Properties of Ti-Ni-Hf High-Temperature Shape Memory Alloys

Energy Technology Data Exchange (ETDEWEB)

Choi, Seong-Woo; Lee, Hak-Sung; Jeon, Yeong-Min; Yeom, Jong-Taek; Kim, Seong-Woong; Park, Chan-Hee; Hong, Jae-Keun; Oh, Chang-Seok [Korea Institute of Materials Science, Changwon (Korea, Republic of); Nam, Tae-Hyun [Gyeongsang National University, Jinju (Korea, Republic of); Kim, Jeoung Han [Hanbat National University, Daejeon (Korea, Republic of)

2015-03-15

The effect of Ni and Hf content on the microstructure, phase transformation, and hot workability of Ti-Ni-Hf high-temperature shape memory alloys (SMAs) were investigated. Twelve different Ti-xNi (x=49, 50.2, 50.5, 50.8 at%)-yHf (y=10, 12, 14 at%) SMA ingots were prepared by vacuum arc re-melting, and then analyzed by SEM, DSC, TEM, and XRD after heat treatment. Precipitation behavior was mostly dependent on Ni content rather than Hf content. The effect of homogenization treatment on the particle precipitation and phase transformation behavior was studied. We also found that hot workability was greatly dependent on the solidification structure of the austenite phase.

Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

Science.gov (United States)

Panda, D. K.; Lenka, T. R.

2017-12-01

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

Ab initio theoretical study of dipole-bound anions of molecular complexes: (HF)3- and (HF)4- anions

Science.gov (United States)

Ramaekers, Riet; Smith, Dayle M. A.; Smets, Johan; Adamowicz, Ludwik

1997-12-01

Ab initio calculations have been performed to determine structures and vertical electron detachment energy (VDE) of the hydrogen fluoride trimer and tetramer anions, (HF)3- and (HF)4-. In these systems the excess electron is bound by the dipole field of the complex. It was determined that, unlike the neutral complexes which prefer the cyclic structures, the equilibrium geometries of the anions have "zig-zag" shapes. For both complexes the predicted VDEs are positive [210 meV and 363 meV for (HF)3- and (HF)4-, respectively], indicating that the anions are stable systems with respect to the vertical electron detachment. These results were obtained at the coupled-cluster level of theory with single, double and triple excitations [CCSD(T) method; the triple-excitation contribution in this method is calculated approximately using the perturbation approach] with the anion geometries obtained using the second-order Møller-Plesset perturbation theory (MP2) method. The same approach was also used to determine the adiabatic electron affinities (AEA) of (HF)3 and (HF)4. In addition to the electronic contribution, we also calculated the contributions (using the harmonic approximation) resulting from different zero-point vibration energies of the neutral and anionic clusters. The calculations predicted that while the AEA of (HF)3 is positive (44 meV), the AEA for (HF)4 is marginally negative (-16 meV). This suggests that the (HF)3- anion should be a stable system, while the (HF)4- is probably metastable.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yurchuk, Ekaterina

2015-02-06

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

MO-HF-C alloy composition

International Nuclear Information System (INIS)

Whelan, E.P.; Kalns, E.

1987-01-01

This patent describes, as an article of manufacture, a cast ingot of a molybdenum-hafnium-carbon alloy consisting essentially by weight of about 0.6% to about 1% Hf, about 0.045% to about 0.08% C, and the balance essentially molybdenum. The amount of Hf and C present are substantially stoichiometric with respect to HfC and within about +-15% of stoichiometry. The ingot is characterized in that it has a substantially less tendency to crack compared to alloys containing Hf in excess of about 1% by weight and carbon in excess of 0.08% by weight, without substantial diminution in strength properties of the alloy

Validation of Zr and Hf analysis contained on water phase using k_0-neutron activation analysis method

International Nuclear Information System (INIS)

Wisjachudin Faisa; Sutisna

2010-01-01

At conversion of Zr-sand to Zircon Oxide, the Hf content in product process should not be more than 100 ppm. While Zr and Hf are two elements that have a similar chemical property Hs, they are difficult to analyze by ordinary chemical analysis. One of reliable analytical method that can be used to quantify Zr and Hf is the instrumental neutron activation analysis. Related to this problem, a result of k_0-Instrumental Neutron Activation Analysis (k_0-INAA) on Zr and Hf (in aqueous phase) has been validated. A number of 200 µL SPEX Pure standard solution which have a concentration of 1 g/L pipeted into a cleaned micro vial, then dried at a temperature of 40°C for 24 hours. Samples, together with flux monitors, were irradiated simultaneously at 15 MW power (thermal neutron flux around 4.1 x 10"1"7n. m"-"2.s"-"1) for 30 minutes in the rabbit facility of GA. Siwabessy reactor. Counting of the irradiated sample have been done using a high resolution HPGe detector (FWHM = 1.9 keV at Eγ 1332.5 keV of "6"0Co,Peak to Compton ratio ~ 40). The analytical results showed a relative standard deviation (RSD) of Zr is 6.6 % with average uncertainty of 3.08 % and a detection limit of 0.1 mg, while RSD of Hf = 8.2 %, with average uncertainty of 8.04 % and a detection limit of 0.3 mg. Recovery obtained was 106,0 % and 96,0 % for Zr and Hf respectively. These results are relatively better compared to the previous result using the Standard Reference Material (SRM) 1633b Coal Fly Ash which have RSD Hf was 20.6 %. (author)

The rotational excitation of HF by H

Science.gov (United States)

Desrousseaux, Benjamin; Lique, François

2018-06-01

The HF molecule is a key tracer of molecular hydrogen in diffuse interstellar medium (ISM). Accurate modelling of the HF abundance in such media requires one to model its excitation by both radiation and collisions. In diffuse ISM, the dominant collisional partners are atomic and molecular hydrogen. We report quantum time-independent calculations of collisional cross-sections and rate coefficients for the rotational excitation of HF by H. The reactive hydrogen exchange channels are taken into account in the scattering calculations. For the first time, HF-H rate coefficients are provided for temperature ranging from 10 to 500 K. The strongest collision-induced rotational HF transitions are those with Δj = 1, and the order of magnitude of the new HF-H rate coefficients is similar to that of the HF-H2 ones previously computed. As a first application, we simulate the excitation of HF by both H and H2 in typical diffuse ISM. We show that, depending on the rotational transition, hydrogen atoms increase or decrease the simulated excitation temperatures compared to collisional excitation only due to H2 molecules. Such results suggest that the new HF-H collisional data have to be used for properly modelling the abundance of HF in diffuse ISM.

Simultaneous analysis of rotational and vibrational-rotational spectra of DF and HF to obtain irreducible molecular constants for HF

International Nuclear Information System (INIS)

Horiai, Koui; Uehara, Hiromichi

2011-01-01

Graphical abstract: Available rotational and vibrational-rotational spectral lines of DF and HF are analyzed simultaneously using a non-Born-Oppenheimer effective Hamiltonian. Research highlights: → Simultaneous analysis of DF and HF spectral data. → Application of a non-Born-Oppenheimer effective Hamiltonian. → Twenty irreducible molecular constants for HF have been determined. - Abstract: Analytic expressions of corrections for the breakdown of the Born-Oppenheimer approximation to Dunham's Y ij with optimal parameters, i.e., determinable clusters of expansion coefficients, are applied to a data analysis of the rotational and vibrational-rotational transitions of HF reported in the literature. All the available spectral lines of the two isotopologues, DF and HF, are simultaneously fitted to a single set of molecular parameters of HF within experimental errors. Fitting of a data set of 595 spectral transitions for DF and HF has generated only 20 minimal independent parameter values, i.e., 'irreducible' molecular constants of HF, that are sufficient to precisely generate 82 Y ij coefficients and 144 band constants in total: 41 Y ij and 72 band constants each for DF and HF.

Crystal structure and band gap determination of HfO2 thin films

NARCIS (Netherlands)

Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

2007-01-01

Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Directory of Open Access Journals (Sweden)

Meng-Fang Lin

2015-01-01

Full Text Available The stable operation of transistors under a positive bias stress (PBS is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C. The mobilities of the Hf-InOx thin-film transistors (TFTs are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS. A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.

High-k shallow traps observed by charge pumping with varying discharging times

Energy Technology Data Exchange (ETDEWEB)

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wang, Bin-Wei; Cao, Xi-Xin [Department of Embedded System Engineering, Peking University, Beijing, P.R.China (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

2013-11-07

In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

Chemical evolution of Himalayan leucogranites based on an O, U-Pb and Hf study of zircon

Science.gov (United States)

Hopkinson, Thomas N.; Warren, Clare J.; Harris, Nigel B. W.; Hammond, Samantha J.; Parrish, Randall R.

2015-04-01

Crustal melting is a characteristic process at convergent plate margins, where crustal rocks are heated and deformed. Miocene leucogranite sheets and plutons are found intruded into the high-grade metasedimentary core (the Greater Himalayan Sequence, GHS) across the Himalayan orogen. Previously-published Himalayan whole-rock data suggest that these leucogranites formed from a purely meta-sedimentary source, isotopically similar to those into which they now intrude. Bulk rock analyses carry inherent uncertainties, however: they may hide contributions from different contributing sources, and post-crystallization processes such as fluid interaction may significantly alter the original chemistry. In contrast, zircon is more able to retain precise information of the contributing sources of the melt from which it crystallises whilst its resistant nature is impervious to post-magmatic processes. This multi-isotope study of Oligocene-Miocene leucogranite zircons from the Bhutan Himalaya, seeks to differentiate between various geochemical processes that contribute to granite formation. Hf and O isotopes are used to detect discrete changes in melt source while U-Pb isotopes provide the timing of zircon crystallisation. Our data show that zircon rims of Himalayan age yield Hf-O signatures that lie within the previously reported whole-rock GHS field, confirming the absence of a discernible mantle contribution to the leucogranite source. Importantly, we document a decrease in the minimum ɛHf values during Himalayan orogenesis through time, correlating to a change in Hf model age from 1.4 Ga to 2.4 Ga. Nd model ages for the older Lesser Himalayan metasediments (LHS) that underthrust the GHS are significantly older than those for the GHS (2.4-2.9 Ga compared with 1.4-2.2 Ga), and as such even minor contributions of LHS material incorporated into a melt would significantly increase the resulting Hf model age. Hence our leucogranite data suggest either a change of source within

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Science.gov (United States)

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2014-01-01

Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

Development of HF-systems for electron storage systems

International Nuclear Information System (INIS)

Androsov, V.P.; Karnaukhov, I.M.; Popkov, Yu.P.; Reva, S.N.; Telegin, Yu.N.

1999-01-01

Development of HF systems for electron storages is described. Its final task is construction of 100 kW HF station at 699,3 MHz frequency consisting from low-power HF system, klystron amplifier, wave line for HF power transmission and accelerating section. Functional parameters of HF station are given

Coulomb-nuclear interference measurements of 168Yb, 176Hf, 178Hf, and 180Hf and lifetime measurements in 186Hg

International Nuclear Information System (INIS)

Nettles, W.G.

1979-01-01

Alpha scattering measurements were performed at center-of-mass energies near the Coulomb barrier. These energies allow for nuclear as well as pure Coulomb forces to play a significant role in the excitation process. The interference of these two forces is very sensitive to the sign of the E4 ground-state moment, whereas pure Coulomb excitation is not. Systematics of the E4 moments of the rare earth mass region indicate a transition in the magnitude and sign of the reduced matrix element of the M(E4) operator between 0 + and 4 + states from small and positive to large and negative between Yb and W. Previous Coulomb-nuclear interference measurements show that this reduced matrix element for 180 Hf is large and negative. The present results agree with that conclusion. It is also shown that the above reduced matrix element for 178 Hf, like that of 180 Hf, is large and negative. The small and positive moment (matrix element) for 168 Yb is seen to be consistent with the experimental data. No conclusions are drawn for the E4 moment in 176 Hf. The measurement of nuclear lifetimes shorter than 500 ps requires the use of plastic scintilltor detectors. These detectors, however have very poor energy resolution. A system is described that uses plastic scintillators with a magnetic lens spectrometer for energy selection. The system was used to measure the lifetime of the 522-keV 0 + sate in 186 Hf. A data analysis method using higher-order distribution moments is also presented

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

Science.gov (United States)

Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

2017-01-13

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

Effect of Hf Additions to Pt Aluminide Bond Coats on EB-PVD TBC Life

Science.gov (United States)

Nesbitt, James; Nagaraj, Ben; Williams, Jeffrey

2000-01-01

Small Hf additions were incorporated into a Pt aluminide coating during chemical vapor deposition (CVD) on single crystal RENE N5 substrates. Standard yttria-stabilized zirconia top coats were subsequently deposited onto the coated substrates by electron beam-physical vapor deposition (EB-PVD). The coated substrates underwent accelerated thermal cycle testing in a furnace at a temperature in excess of 1121 C (2050 F) (45 minute hot exposure, 15 minute cool to approximately 121 C (250 F)) until the thermal barrier coating (TBC) failed by spallation. Incorporating Hf in the bond coat increased the TBC life by slightly more than three times that of a baseline coating without added Hf. Scanning electron microscopy of the spalled surfaces indicated that the presence of the Hf increased the adherence of the thermally grown alumina to the Pt aluminide bond coat. The presence of oxide pegs growing into the coating from the thermally grown alumina may also partially account for the improved TBC life by creating a near-surface layer with a graded coefficient of thermal expansion.

Thermal evolution of CaO-doped HfO{sub 2} films and powders

Energy Technology Data Exchange (ETDEWEB)

Barolin, S A; Sanctis, O A de [Lab. Materiales Ceramicos, FCEIyA, Universidad Nacional de Rosario, IFIR-CONICET (Argentina); Caracoche, M C; Martinez, J A; Taylor, M A; Pasquevich, A F [Departamento de Fisica, FCE, Universidad Nacional de La Plata, IFLP-CONICET (Argentina); Rivas, P C, E-mail: oski@fceia.unr.edu.a [Facultad de Ciencias Agronomicas y Forestales, Universidad Nacional de La Plata, IFLP (Argentina)

2009-05-01

Solid solutions of ZrO2 and HfO2 are potential electrolyte materials for intermediate-temperature SOFC because both are oxygen-ion conductors. The main challenge for these compounds is to reduce the relatively high value of the activation energies vacancies diffusion, which is influenced by several factors. In this work the thermal evolution of CaO-HfO{sub 2} materials have been investigated. (CaO)y-Hf(1-y)O(2-y) (y = 0.06, 0.14 y 0.2) coatings and powders were synthesized by chemical solution deposition (CSD). Films were deposited onto alumina substrates by Dip Coating technique, the burning of organic waste was carried out at 500 deg. C under normal atmosphere and then the films were thermally treated at intervals of temperature rising to a maximum temperature of 1250 deg. C. By means Glazing Incidence X-ray Diffraction (rho-2theta configuration) the phases were studied in the annealed films. On the other hand, the thermal evolution and crystallization process of powders were analyzed in-situ by HT-XRD. The phenomena crystallization occurred in films and powders were analyzed. The activation energies of diffusion of oxygen vacancies of HfO2-14 mole% CaO and HfO2-20 mole% CaO films were measured from the thermal evolution of the relaxation constant measured by Perturbed Angular Correlation Technique.

Atomic layer deposition of HfO{sub 2} for integration into three-dimensional metal-insulator-metal devices

Energy Technology Data Exchange (ETDEWEB)

Assaud, Loic [Aix Marseille Univ, CNRS, CINAM, Marseille (France); ICMMO-ERIEE, Universite Paris-Sud / Universite Paris-Saclay, CNRS, Orsay (France); Pitzschel, Kristina; Barr, Maissa K.S.; Petit, Matthieu; Hanbuecken, Margrit; Santinacci, Lionel [Aix Marseille Univ, CNRS, CINAM, Marseille (France); Monier, Guillaume [Universite Clermont Auvergne, Universite Blaise Pascal, CNRS, Institut Pascal, Clermont-Ferrand (France)

2017-12-15

HfO{sub 2} nanotubes have been fabricated via a template-assisted deposition process for further use in three-dimensional metal-insulator-metal (MIM) devices. HfO{sub 2} thin layers were grown by Atomic Layer Deposition (ALD) in anodic alumina membranes (AAM). The ALD was carried out using tetrakis(ethylmethylamino)hafnium and water as Hf and O sources, respectively. Long exposure durations to the precursors have been used to maximize the penetration depth of the HfO{sub 2} layer within the AAM and the effect of the process temperature was investigated. The morphology, the chemical composition, and the crystal structure were studied as a function of the deposition parameters using transmission and scanning electron microscopies, X-ray photoelectron spectroscopy, and X-ray diffraction, respectively. As expected, the HfO{sub 2} layers grown at low-temperature (T = 150 C) were amorphous, while for a higher temperature (T = 250 C), polycrystalline films were observed. The electrical characterizations have shown better insulating properties for the layers grown at low temperature. Finally, TiN/HfO{sub 2}/TiN multilayers were grown in an AAM as proof-of-concept for three-dimensional MIM nanostructures. (orig.)

Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

Science.gov (United States)

Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

2018-04-01

The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

International Nuclear Information System (INIS)

Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

2015-01-01

Ferroelectric HfO 2 -based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO 2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO 2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO 2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field

Hf på VUC

DEFF Research Database (Denmark)

Pless, Mette; Hansen, Niels-Henrik Møller

. Konkret har forskningsprojektet 3 mål: At afdække hf-kursisternes tidligere uddannelsesforløb og -erfaringer, før de starter på hf på VUC.At afdække, hvordan mødet med uddannelsens studiemiljø opleves af kursisterne, og ikke mindst kursisternes oplevelse af undervisningsformer, lærere mm.At afdække, hvad...

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.

Science.gov (United States)

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-05-17

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO₂ gate insulator and CF₄ plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO₂ gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm²/V∙s (without treatment) to 54.6 cm²/V∙s (with CF₄ plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO₂ gate dielectric has also been improved by the CF₄ plasma treatment. By applying the CF₄ plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device's immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF₄ plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO₂ gate dielectric, but also enhances the device's reliability.

Evaluation of chromatic cues for trapping Bactrocera tau.

Science.gov (United States)

Li, Lei; Ma, Huabo; Niu, Liming; Han, Dongyin; Zhang, Fangping; Chen, Junyu; Fu, Yueguan

2017-01-01

Trapping technology based on chromatic cues is an important strategy in controlling Tephritidae (fruit flies). The objectives of this present study were to evaluate the preference of Bactrocera tau for different chromatic cues, and to explore an easy method to print and reproduce coloured paper. Chromatic cues significantly affected the preference of adult B. tau. Wavelengths in the 515-604 nm range were the suitable wavelengths for trapping B. tau. Different-day-old B. tau had different colour preferences. Virtual wavelengths of 595 nm (yellow) and 568 nm (yellowish green) were the optimum wavelengths for trapping 5-7-day-old B. tau and 30-32-day-old B. tau respectively. The trap type and height significantly influenced B. tau attraction efficiency. The number of B. tau on coloured traps hung perpendicular to plant rows was not significantly higher than the number on traps hung parallel to plant rows. The quantisation of colour on the basis of Bruton's wavelength to RGB function can serve as an alternative method for printing and reproducing coloured paper, but a corrected equation should be established between the theoretical wavelength and actual wavelength of coloured paper. Results show that a compound paper coloured yellow (595 nm) and yellowish green (568 nm) installed at 60 and 90 cm above the ground shows the maximum effect for trapping B. tau. © 2016 Society of Chemical Industry. © 2016 Society of Chemical Industry.

SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

KAUST Repository

Yesibolati, Nulati

2014-03-14

For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery capacity at a current density of 150 mAg -1 after 100 cycles is 548 and 853 mAhg-1 for the uncoated and HfO2-coated anodes, respectively. Material analysis reveals that the HfO2 layers are amorphous in nature and conformably coat the SnO2-based anodes. In addition, the analysis reveals that ALD HfO2 not only protects the SnO2-based anodes from irreversible reactions with the electrolyte and buffers its volume change, but also chemically interacts with the SnO2 anodes to increase battery capacity, despite the fact that HfO2 is itself electrochemically inactive. The amorphous nature of HfO2 is an important factor in explaining its behavior, as it still allows sufficient Li diffusion for an efficient anode lithiation/delithiation process to occur, leading to higher battery capacity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CVD growth of large-area and high-quality HfS2 nanoforest on diverse substrates

Science.gov (United States)

Zheng, Binjie; Wang, Zegao; Qi, Fei; Wang, Xinqiang; Yu, Bo; Zhang, Wanli; Chen, Yuanfu

2018-03-01

Two-dimensional layered transition metal dichalcogenides (TMDs) have attracted burgeoning attention due to their various properties and wide potential applications. As a new TMD, hafnium disulfide (HfS2) is theoretically predicted to have better electrical performance than widely studied MoS2. The experimental researches also confirmed the extraordinary feature in electronics and optoelectronics. However, the maximal device performance may not be achieved due to its own limitation of planar structure and challenge of transfer without contamination. Here, through the chemical vapor deposition (CVD) technique, inch-size HfS2 nanoforest has been directly grown on diverse objective substrates covering insulating, semiconducting and conducting substrates. This direct CVD growth without conventional transfer process avoids contamination and degradation in quality, suggesting its promising and wide applications in high-quality and multifarious devices. It is noted that all the HfS2 nanoforests grown on diverse substrates are constructed with vertically aligned few-layered HfS2 nanosheets with high crystalline quality and edge orientation. Moreover, due to its unique structure, the HfS2 nanoforest owns abundant exposed edge sites and large active surface area, which is essential to apply in high-performance catalyst, sensor, and energy storage or field emitter.

Effect of Aedes aegypti exposure to spatial repellent chemicals on BG-Sentinel™ trap catches.

Science.gov (United States)

Salazar, Ferdinand V; Achee, Nicole L; Grieco, John P; Prabaripai, Atchariya; Ojo, Tolulope A; Eisen, Lars; Dureza, Christine; Polsomboon, Suppaluck; Chareonviriyaphap, Theeraphap

2013-05-20

An integrated approach to reduce densities of adult Aedes aegypti inside homes is currently being evaluated under experimentally controlled field conditions. The strategy combines a spatial repellent (SR) treatment (applied indoors) with the Biogents Sentinel™ (BGS) mosquito trap positioned in the outdoor environment. In essence, when combined, the goal is to create a push-pull mechanism that will reduce the probability of human-vector contact. The current study measured BGS recapture rates of Ae. aegypti test cohorts that were exposed to either SR or control (chemical-free) treatments within experimental huts. The objective was to define what, if any, negative impact SR may have on BGS trap efficacy (i.e., reduced BGS collection). Aedes aegypti females were exposed to SR compounds within experimental huts in the form of either treated fabric (DDT and transfluthrin) or mosquito coil (metofluthrin). Test cohorts were released within individual screen house cubicles, each containing 4 BGS traps, following SR exposure according to treatment. Two separate test cohorts were evaluated: (i) immediate release (IR) exposed from 06:00-12:00 hours and released at 12:00 hours and (ii) delayed release (DR) exposed from12:00-18:00 hours and released at 05:30 hours the following day. BGS recapture was monitored at 09:30, 13:30 and 15:30 hours and the cumulative recapture by time point quantified. Exposure of Ae. aegypti females to either DDT or metofluthrin did not significantly impact BGS capture as compared to cohorts of non-exposed females. This was true for both IR and DR exposure populations. IR cohorts exposed to transfluthrin resulted in significantly lower BGS recapture compared to matched controls but this effect was primarily due to high mosquito mortality during transfluthrin trials. Our data indicate no more than minor and short-lived impacts (i.e., reduced attraction) on BGS trap catches following exposure to the pyrethroid compounds transfluthrin and metofluthrin

Phenomena induced by powerful HF pumping towards magnetic zenith with a frequency near the F-region critical frequency and the third electron gyro harmonic frequency

Directory of Open Access Journals (Sweden)

N. F. Blagoveshchenskaya

2009-01-01

Full Text Available Multi-instrument observational data from an experiment on 13 October 2006 at the EISCAT/HEATING facility at Tromsø, Norway are analysed. The experiment was carried out in the evening hours when the electron density in the F-region dropped, and the HF pump frequency fH was near and then above the critical frequency of the F2 layer. The distinctive feature of this experiment is that the pump frequency was just below the third electron gyro harmonic frequency, while both the HF pump beam and UHF radar beam were directed towards the magnetic zenith (MZ. The HF pump-induced phenomena were diagnosed with several instruments: the bi-static HF radio scatter on the London-Tromsø-St. Petersburg path, the CUTLASS radar in Hankasalmi (Finland, the European Incoherent Scatter (EISCAT UHF radar at Tromsø and the Tromsø ionosonde (dynasonde. The results show thermal electron excitation of the HF-induced striations seen simultaneously from HF bi-static scatter and CUTLASS radar observations, accompanied by increases of electron temperature when the heater frequency was near and then above the critical frequency of the F2 layer by up to 0.4 MHz. An increase of the electron density up to 25% accompanied by strong HF-induced electron heating was observed, only when the heater frequency was near the critical frequency and just below the third electron gyro harmonic frequency. It is concluded that the combined effect of upper hybrid resonance and gyro resonance at the same altitude gives rise to strong electron heating, the excitation of striations, HF ray trapping and extension of HF waves to altitudes where they can excite Langmuir turbulence and fluxes of electrons accelerated to energies that produce ionization.

Phenomena induced by powerful HF pumping towards magnetic zenith with a frequency near the F-region critical frequency and the third electron gyro harmonic frequency

Directory of Open Access Journals (Sweden)

N. F. Blagoveshchenskaya

2009-01-01

Full Text Available Multi-instrument observational data from an experiment on 13 October 2006 at the EISCAT/HEATING facility at Tromsø, Norway are analysed. The experiment was carried out in the evening hours when the electron density in the F-region dropped, and the HF pump frequency f_H was near and then above the critical frequency of the F2 layer. The distinctive feature of this experiment is that the pump frequency was just below the third electron gyro harmonic frequency, while both the HF pump beam and UHF radar beam were directed towards the magnetic zenith (MZ. The HF pump-induced phenomena were diagnosed with several instruments: the bi-static HF radio scatter on the London-Tromsø-St. Petersburg path, the CUTLASS radar in Hankasalmi (Finland, the European Incoherent Scatter (EISCAT UHF radar at Tromsø and the Tromsø ionosonde (dynasonde. The results show thermal electron excitation of the HF-induced striations seen simultaneously from HF bi-static scatter and CUTLASS radar observations, accompanied by increases of electron temperature when the heater frequency was near and then above the critical frequency of the F2 layer by up to 0.4 MHz. An increase of the electron density up to 25% accompanied by strong HF-induced electron heating was observed, only when the heater frequency was near the critical frequency and just below the third electron gyro harmonic frequency. It is concluded that the combined effect of upper hybrid resonance and gyro resonance at the same altitude gives rise to strong electron heating, the excitation of striations, HF ray trapping and extension of HF waves to altitudes where they can excite Langmuir turbulence and fluxes of electrons accelerated to energies that produce ionization.

Nanopore fabricated in pyramidal HfO2 film by dielectric breakdown method

Science.gov (United States)

Wang, Yifan; Chen, Qi; Deng, Tao; Liu, Zewen

2017-10-01

The dielectric breakdown method provides an innovative solution to fabricate solid-state nanopores on insulating films. A nanopore generation event via this method is considered to be caused by random charged traps (i.e., structural defects) and high electric fields in the membrane. Thus, the position and number of nanopores on planar films prepared by the dielectric breakdown method is hard to control. In this paper, we propose to fabricate nanopores on pyramidal HfO2 films (10-nm and 15-nm-thick) to improve the ability to control the location and number during the fabrication process. Since the electric field intensity gets enhanced at the corners of the pyramid-shaped film, the probability of nanopore occurrence at vertex and edge areas increases. This priority of appearance provides us chance to control the location and number of nanopores by monitoring a sudden irreversible discrete increase in current. The experimental results showed that the probability of nanopore occurrence decreases in an order from the vertex area, the edge area to the side face area. The sizes of nanopores ranging from 30 nm to 10 nm were obtained. Nanopores fabricated on the pyramid-shaped HfO2 film also showed an obvious ion current rectification characteristic, which might improve the nanopore performance as a biomolecule sequencing platform.

Roles of Ag in fabricating Si nanowires by the electroless chemical etching technique

International Nuclear Information System (INIS)

Wan, X.; Wang, Q. K.; Wangyang, P. H.; Tao, H.

2012-01-01

Silicon wafers coated with a film of Ag pattern are used for investigating roles of Ag in the fabrication of silicon nanowire arrays (SiNWs) by the electroless chemical etching technique. The diameter of SiNWs grown in the mixed AgNO 3 /HF solution ranges from 20 to 250 nm. A growth mechanism for such obtained SiNWs is proposed and further experimentally verified. As a comparison as well as to better understand this chemical process, another popular topic on growing SiNWs in the H 2 O 2 /HF solution is also studied. Originating from different chemical reaction mechanisms, Ag film could protect the underneath Si in the AgNO 3 /HF solution and it could, on the contrary, accelerate etching of the underneath Si in the H 2 O 2 /HF solution.

Positron annihilation studies in Hf doped YBCO

International Nuclear Information System (INIS)

Gopalan, P.; Priya, E.R.; Premila, M.; Sundar, C.S.; Gopinathan, K.P.

1992-01-01

The variation of positron lifetime and oxygen stoichiometry as a function of quench temperature has been measured in undoped and 0.5at%, 0.75at%, and 1.0 at% Hf doped YBCO. In both the undoped and Hf doped samples, the lifetime decreases and the oxygen content increases as the quench temperature is lowered from 900degC to 300degC. The lifetime in the tetragonal phase (900degC) decreases with the increase in Hf content, whereas in the orthorhombic phase (450degC) it increases. The difference in lifetime between the tetragonal and orthorhombic phases decreases with the increase in the Hf content. These trends are discussed in terms of the influence of Hf doping on the oxygen content and the positron density distribution in YBCO

Electric Field Gradients at Hf and Fe Sites in Hf2Fe Recalculated

International Nuclear Information System (INIS)

Belosevic-Cavor, J.; Cekic, B.; Novakovic, N.; Koteski, V.; Milosevic, Z.

2004-01-01

The electric field gradients (EFG) of the Hf 2 Fe intermetallic compound were calculated using the full-potential linearized augmented plain-wave (FP-LAPW) method as embodied in the WIEN 97 code. The obtained values are compared with other ab-initio calculations and on a qualitative basis with the previously reported experimental data obtained from TDPAC. The calculated results, -23.1.10 21 V/m 2 and 2.7.10 21 V/m 2 for Hf 48f and Fe 32e position, respectively, are in excellent agreement with experimental data (23.4.10 21 V/m 2 and 2.7.10 21 V/m 2 ), better than those reported in earlier calculations. The calculated EFG for Hf 16c position (4.2.10 21 V/m 2 ) is stronger than the experimental one (1.1.10 21 V/m 2 ).

Microstructural characterization of as-cast hf-b alloys

Directory of Open Access Journals (Sweden)

João Carlos Jânio Gigolotti

2012-04-01

Full Text Available An accurate knowledge of several metal-boron phase diagrams is important to evaluation of higher order systems such as metal-silicon-boron ternaries. The refinement and reassessment of phase diagram data is a continuous work, thus the reevaluation of metal-boron systems provides the possibility to confirm previous data from an investigation using higher purity materials and better analytical techniques. This work presents results of rigorous microstructural characterization of as-cast hafnium-boron alloys which are significant to assess the liquid composition associated to most of the invariant reactions of this system. Alloys were prepared by arc melting high purity hafnium (minimum 99.8% and boron (minimum 99.5% slices under argon atmosphere in water-cooled copper crucible with non consumable tungsten electrode and titanium getter. The phases were identified by scanning electron microscopy, using back-scattered electron image mode and X-ray diffraction. In general, a good agreement was found between our data and those from the currently accepted Hafnium-Boron phase diagram. The phases identified are αHfSS and B-RhomSS, the intermediate compounds HfB and HfB2 and the liquide L. The reactions are the eutectic L ⇔ αHfSS + HfB and L ⇔ HfB2 + B-Rhom, the peritectic L + HfB2 ⇔ HfB and the congruent formation of HfB2.

The Thermodynamic Characterization of ZrCo–H, HfCo−H, HfNi−H and Zr{sub 1–x}HfxNi(Co) Alloy–H Systems

Energy Technology Data Exchange (ETDEWEB)

Flanagan, Ted B., E-mail: ted.flanagan@uvm.edu; Noh, Hak; Luo, Suifang

2016-08-25

ZrCo and HfCo intermetallic compounds have the same cubic (CsCl-type) structure and their ternary (Zr{sub 1−x}Hf{sub x})Co alloys are also cubic. ZrNi and HfNi intermetallic compounds have the orthorhombic structure (CrB-type) and the ternary (Zr{sub 1−x}Hf{sub x})Ni alloys also have this structure. Thermodynamic data for hydride formation and decomposition in ZrCo, HfCo and HfNi intermetallic compounds have been determined from reaction calorimetry and from pressure-composition isotherms. Thermodynamic data have been determined for the three ternary alloys: (Zr{sub 0.75}Hf{sub 0.25})Co, (Zr{sub 0.50}Hf{sub 0.50})Co, and (Zr{sub 0.25}Hf{sub 0.75})Co and the four ternary alloys: (Zr{sub 0.875}Hf{sub 0.125})Ni, (Zr{sub 0.75}Hf{sub 0.25})Ni, (Zr{sub 0.50}Hf{sub 0.50})Ni, and (Zr{sub 0.25}Hf{sub 0.75})Ni. This offers the opportunity to learn how the thermodynamic properties of the ternary alloy-H systems change with the stoichiometry of alloys with the same structure. - Highlights: • Calorimetric enthalpies determined for H absorption by ZrCo, HfCo, HfNi are determined. • Ternary alloys, e.g., Zr{sub 1−x}Hf{sub x}Ni, prepared and characterized by x-ray diffraction. • Isotherms for the ternary alloys give thermodynamic parameters for H solution.

Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements

Science.gov (United States)

Manikanthababu, N.; Vajandar, S.; Arun, N.; Pathak, A. P.; Asokan, K.; Osipowicz, T.; Basu, T.; Nageswara Rao, S. V. S.

2018-03-01

In-situ I-V and C-V characterization studies were carried out to determine the device quality of atomic layer deposited HfO2 (2.7 nm)/SiO2 (0.6 nm)/Si-based metal oxide semiconductor devices during 120 MeV Ag ion irradiation. The influence of various tunneling mechanisms has been investigated by analyzing the I-V characteristics as a function of ion fluence. The nature of the defects created is tentatively identified by the determination of the significant tunneling processes. While the ion induced annealing of defects is observed at lower fluences, ion induced intermixing and radiation damage is found to be significant at higher fluences. The C-V characteristics also reveal significant changes at the interface and oxide trap densities: an increase in the oxide layer thickness occurs through the formation of an HfSiO interlayer. The interlayer is due to the swift heavy ion induced intermixing, which has been confirmed by X-TEM and X-ray photoelectron spectroscopy measurements.

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Science.gov (United States)

García, H.; González, M. B.; Mallol, M. M.; Castán, H.; Dueñas, S.; Campabadal, F.; Acero, M. C.; Sambuco Salomone, L.; Faigón, A.

2018-04-01

The γ-radiation effects on the electrical characteristics of metal-insulator-semiconductor capacitors based on HfO2, and on the resistive switching characteristics of the structures have been studied. The HfO2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a γ ray irradiation using three different doses (16 kGy, 96 kGy and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

TEA HF laser with a high specific radiation energy

Science.gov (United States)

Puchikin, A. V.; Andreev, M. V.; Losev, V. F.; Panchenko, Yu. N.

2017-01-01

Results of experimental studies of the chemical HF laser with a non-chain reaction are presented. The possibility of the total laser efficiency of 5 % is shown when a traditional C-to-C pumping circuit with the charging voltage of 20-24 kV is used. It is experimentally shown that the specific radiation output energy of 21 J/l is reached at the specific pump energy of 350 J/l in SF6/H2 = 14/1 mixture at the total pressure of 0.27 bar.

Operation mode switchable charge-trap memory based on few-layer MoS2

Science.gov (United States)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

High energy HF pulsed lasers

International Nuclear Information System (INIS)

Patterson, E.L.; Gerber, R.A.

1976-01-01

Recent experiments show that pulsed HF lasers are capable of producing high energy with good efficiency. Preliminary experiments show that the laser radiation from the high-gain medium can be controlled with a low-power probe laser beam or with low-level feedback. These results indicate that the HF laser may have potential for second-generation laser fusion experiments

Tracking magmatic processes through Zr/Hf ratios in rocks and Hf and Ti zoning in zircons: An example from the Spirit Mountain batholith, Nevada

Science.gov (United States)

Lowery, Claiborne L.E.; Miller, C.F.; Walker, B.A.; Wooden, J.L.; Mazdab, F.K.; Bea, F.

2006-01-01

Zirconium and Hf are nearly identical geochemically, and therefore most of the crust maintains near-chondritic Zr/Hf ratios of ???35-40. By contrast, many high-silica rhyolites and granites have anomalously low Zr/Hf (15-30). As zircon is the primary reservoir for both Zr and Hf and preferentially incorporates Zr, crystallization of zircon controls Zr/ Hf, imprinting low Zr/Hf on coexisting melt. Thus, low Zr/Hf is a unique fingerprint of effective magmatic fractionation in the crust. Age and compositional zonation in zircons themselves provide a record of the thermal and compositional histories of magmatic systems. High Hf (low Zr/ Hf) in zircon zones demonstrates growth from fractionated melt, and Ti provides an estimate of temperature of crystallization (TTiZ) (Watson and Harrison, 2005). Whole-rock Zr/Hf and zircon zonation in the Spirit Mountain batholith, Nevada, document repeated fractionation and thermal fluctuations. Ratios of Zr/Hf are ???30-40 for cumulates and 18-30 for high-SiO2 granites. In zircons, Hf (and U) are inversely correlated with Ti, and concentrations indicate large fluctuations in melt composition and TTiZ (>100??C) for individual zircons. Such variations are consistent with field relations and ion-probe zircon geochronology that indicate a >1 million year history of repeated replenishment, fractionation, and extraction of melt from crystal mush to form the low Zr/Hf high-SiO2 zone. ?? 2006 The Mineralogical Society.

Improved method for Hf separation from silicate rocks for isotopic analysis using Ln-spec resin column

International Nuclear Information System (INIS)

Shinjo, Ryuichi; Ginoza, Yuko; Meshesha, Daniel

2010-01-01

An improved chemical separation method for Hf isotope ratio measurement using both the thermal ionization mass spectrometer (TIMS) and the multiple collector-inductively coupled plasma-mass spectrometer (MC-ICP-MS) is presented in this paper. In the first column (2.5-ml Eichrom Ln-spec resin), Hf cut was collected with 2M HCl-0.2M HF after washing the major elements, HREE, Ti, Nb, and Zr. For further Hf purification, the second column (1-ml Ln-spec resin) chemistry was conducted in a manner similar to that of the first column. The first column is designed for treatment with a 0.5-g silicate rock sample for TIMS analysis. Thus, because the Hf amount required for MC-ICP-MS analysis is much lesser than that required for TIMS analysis, the column chemistry for MC-ICP-MS analysis can be scaled down, depending on the amount of digested sample. Although there is a need to improve the TIMS technique, the TIMS Hf data obtained for geological reference rocks and Ethiopian flood basalts after the application of the proposed separation methods are consistent, within analytical error, with the previously reported data obtained using the MC-ICP-MS. The advantages of the proposed method include a reduction in the amount of reagents used (hence, a consequent reduction in the blank contribution), reduction in the time required, and a simplified preparation requiring a fewer number of acids. (author)

Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

International Nuclear Information System (INIS)

Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelae, M.

2005-01-01

Deep level transient spectroscopy, capacitance-voltage and conductance transient measurement techniques have been applied in order to evaluate the electrical quality of thin high-permittivity oxide layers on silicon. The oxides studied included HfO 2 film grown from two different oxygen-free metal precursors and Ta 2 O 5 and Nb 2 O 5 nanolaminates. The interface trap densities correlated to the oxide growth chemistry and semiconductor substrate treatment. No gap state densities induced by structural disorder were measured in the films grown on chemical SiO 2 . Trap densities were also clearly lower in HfO 2 films compared to Ta 2 O 5 -Nb 2 O 5

Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

KAUST Repository

Voznyy, O.; Thon, S. M.; Ip, A. H.; Sargent, E. H.

2013-01-01

Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

Dynamic Trap Formation and Elimination in Colloidal Quantum Dots

KAUST Repository

Voznyy, O.

2013-03-21

Using first-principles simulations on PbS and CdSe colloidal quantum dots, we find that surface defects form in response to electronic doping and charging of the nanoparticles. We show that electronic trap states in nanocrystals are dynamic entities, in contrast with the conventional picture wherein traps are viewed as stable electronic states that can be filled or emptied, but not created or destroyed. These traps arise from the formation or breaking of atomic dimers at the nanoparticle surface. The dimers\\' energy levels can reside within the bandgap, in which case a trap is formed. Fortunately, we are also able to identify a number of shallow-electron-affinity cations that stabilize the surface, working to counter dynamic trap formation and allowing for trap-free doping. © 2013 American Chemical Society.

Study of Direct-Contact HfO2/Si Interfaces

Directory of Open Access Journals (Sweden)

Noriyuki Miyata

2012-03-01

Full Text Available Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equivalent oxide thickness of HfO2/Si gate stack structures. A concept that the author proposes to control the Si oxide interface by using ultra-high vacuum electron-beam HfO2 deposition is described in this review paper, which enables the so-called direct-contact HfO2/Si structures to be prepared. The electrical characteristics of the HfO2/Si metal-oxide-semiconductor capacitors are reviewed, which suggest a sufficiently low interface state density for the operation of metal-oxide-semiconductor field-effect-transistors (MOSFETs but reveal the formation of an unexpected strong interface dipole. Kelvin probe measurements of the HfO2/Si structures provide obvious evidence for the formation of dipoles at the HfO2/Si interfaces. The author proposes that one-monolayer Si-O bonds at the HfO2/Si interface naturally lead to a large potential difference, mainly due to the large dielectric constant of the HfO2. Dipole scattering is demonstrated to not be a major concern in the channel mobility of MOSFETs.

Investigation of chemical equilibrium kinetics by the electromigration method

International Nuclear Information System (INIS)

Bozhikov, G.A.; Ivanov, P.I.; Maslov, O.D.; Dmitriev, S.N.; Bontchev, G.D.; Milanov, M.V.

2003-01-01

The measurement of the chemical reaction rates for complex formation as well as hydrolysis type reactions by the method of horizontal zone electrophoresis is outlined. The correlation between chemical equilibrium kinetics and electrodiffusion processes in a constant d.c. electric field is described. In model electromigration experiments the reaction rate constant of the formation a complex by Hf(IV) and diethylenetriaminepentaacetic acid (DTPA) is determined. The electrophoretic mobility, diffusion coefficient and stability constant of the [HfDTPA] - complex are calculated, taking into account experimental electrophoretic data obtained at 298.15±0.05 K and constant ionic strength. No-carrier-added 175 Hf radionuclide was used in electromigration experiments at concentrations of 10 -10 -10 -11 M. (orig.)

Thermoelectric properties of doped BaHfO_3

International Nuclear Information System (INIS)

Dixit, Chandra Kr.; Bhamu, K. C.; Sharma, Ramesh

2016-01-01

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO_3 by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO_3 doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO_3 is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO_3 is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

Single and dual fiber nano-tip optical tweezers: trapping and analysis

OpenAIRE

Decombe , Jean-Baptiste; Huant , Serge; Fick , Jochen

2013-01-01

International audience; An original optical tweezers using one or two chemically etched fiber nano-tips is developed. We demonstrate optical trapping of 1 micrometer polystyrene spheres at optical powers down to 2 mW. Harmonic trap potentials were found in the case of dual fiber tweezers by analyzing the trapped particle position fluctuations. The trap stiffness was deduced using three different models. Consistent values of up to 1 fN/nm were found. The stiffness linearly decreases with decre...

Thermodynamics of HfCl4-KCl molten mixtures containing HfCl4 up to 33.3 mol. per cent

International Nuclear Information System (INIS)

Smirnov, M.V.; Salyulev, A.B.; Kudyakov, V.Ya.

1980-01-01

Based on measurements of saturated vapour pressure in components of melted mixtures of HfCl 4 -KCl, depending on temperature and concentration, calculated are the results of changes in activity coefficients of hafnium tetrachloride and potassium chloride on transition from diluted solutions, where the Henry law is met, to those concentrated where the law is disobeyed. Growth in the activity coefficient of HfCl 4 is due to dissociation of complex groups of HfCl 6 2- into complexes with a lesser number of ligands and decreasing relative binding energy of Hf 4+ -Cl - there. In this case, marked changes take place in partial enthalpy and entropy of hafnium tetrachloride mixing. Similar dependences are observed for potassium chloride, but they are expressed considerably weaker. Evaporation enthalpy and entropy are calculated for HfCl 4 and KCl monomers from their melted mixtures of various concentrations

Crystal structures of KM(AsF6)3 (M2+ = Mg, Co, Mn, Zn), KCu(SbF6)3 and [Co(HF)2]Sr[Sr(HF)]2-[Sr(HF)2]2[AsF6]12

International Nuclear Information System (INIS)

Mazej, Zoran; Goreshnik, Evgeny

2015-01-01

The KM(AsF 6 ) 3 (M 2+ = Mg, Co, Mn, Zn) and KCu(SbF 6 ) 3 compounds crystallize isotypically to previously known KNi(AsF 6 ) 3 . The main features of the structure of these compounds are rings of MF 6 octahedra sharing apexes with AsF 6 octahedra connected into infinite tri-dimensional frameworks. In this arrangement cavities are formed where K + cations are placed. Single crystals of CoSr 5 (AsF 6 ) 12 .8HF were obtained as one of the products after the crystallization of 3KF/CoF 2 /SrF 2 mixture in the presence of AsF 5 in anhydrous HF. The CoSr 5 (AsF 6 ) 12 .8HF is monoclinic, C/2c (No.15), with a = 26.773(5) Aa, b = 10.087(2) Aa, c = 21.141(5) Aa, β = 93.296(13) circle , V = 5699.9(19) Aa 3 at 200 K, and Z = 4. There are three crystallographically non-equivalent Sr 2+ cations in the crystal structure of CoSr 5 (AsF 6 ) 12 .8HF. The Sr1 is coordinated by ten fluorine atoms from eight different [AsF 6 ]- anions, meanwhile Sr2 and Sr3 are bound to nine fluorine atoms provided by one HF and eight AsF 6 units or by two HF and six AsF 6 units, respectively. The Co 2+ is coordinated distorted-octahedrally by six fluorine atoms from two HF molecules and four different AsF 6 units. All those moieties in the crystal structure of [Co(HF) 2 ]Sr[Sr(HF)] 2 [Sr(HF) 2 ] 2 [AsF 6 ] 12 are connected into tridimensional framework. The CoSr 5 (AsF 6 ) 12 .8HF is a unique example of compound where HF molecules are directly bound via fluorine atoms to two different metal centres.

Zirconium Zr and hafnium Hf

International Nuclear Information System (INIS)

Busev, A.I.; Tiptsova, V.G.; Ivanov, V.M.

1978-01-01

The basic methods for extracting and determining Zr(4) and Hf(4) are described. Diantipyrinemethane and its alkyl homologs selectively extract Zr and Hf from HNO 3 solutions in the presence of nitrates. Zr is selectively extracted with tetraethyldiamide of heptyl phosphoric acid (in benzene) as well as with 2-thenoyltrifluoroacetone (in an acid). The latter reagents is suitable for rapid determination of 95 Zr in a mixture with 95 Nb and other fragments. The complexometric determination of Zr is based on formation of a stable complex of Zr with EDTA. The titration is carried out in the presence of n-sulfobenzene-azo-pyrocatechol, eriochrome black T. The determination is hindered by Hf, fluoride-, phosphate-, oxalate- and tartrate-ions. The method is used for determining Zr in zircon and eudialyte ore. Zr is determined photometrically with the aid of xylenol orange, arsenazo 3 and pyrocatechol violet (in phosphorites). Hf is determined in the presence of Zr photometrically with the aid of xylenol orange or methyl-thymol blue. The method is based on Zr being masked with hydrogen peroxide in the presence of sulfate-ions

Relationship between CCR and NT-proBNP in Chinese HF patients, and their correlations with severity of HF.

Science.gov (United States)

Lu, Zhigang; Wang, Bo; Wang, Yunliang; Qian, Xueqing; Zheng, Wei; Wei, Meng

2014-01-01

To evaluate the relationship between creatinine clearance rate (CCR) and the level of N-terminal pro-B-type natriuretic peptide (NT-proBNP) in heart failure (HF) patients and their correlations with HF severity. Two hundred and one Chinese patients were grouped according to the New York Heart Association (NYHA) classification as NYHA 1-2 and 3-4 groups and 135 cases out of heart failure patients as control group. The following variables were compared among these three groups: age, sex, body mass index (BMI), smoking status, hypertension, diabetes, NT-proBNP, creatinine (Cr), uric acid (UA), left ventricular end-diastolic diameter (LVEDD), and CCR. The biomarkers of NT-proBNP, Cr, UA, LVEDD, and CCR varied significantly in the three groups, and these variables were positively correlated with the NHYA classification. The levels of NT-proBNP and CCR were closely related to the occurrence of HF and were independent risk factors for HF. At the same time, there was a significant negative correlation between the levels of NT-proBNP and CCR. The area under the receiver operating characteristic curve suggested that the NT-proBNP and CCR have high accuracy for diagnosis of HF and have clinical diagnostic value. NT-proBNP and CCR may be important biomarkers in evaluating the severity of HF.

Trapping proton transfer intermediates in the disordered hydrogen-bonded network of cryogenic hydrofluoric acid solutions.

Science.gov (United States)

Ayotte, Patrick; Plessis, Sylvain; Marchand, Patrick

2008-08-28

A molecular-level description of the structural and dynamical aspects that are responsible for the weak acid behaviour of dilute hydrofluoric acid solutions and their unusual increased acidity at near equimolar concentrations continues to elude us. We address this problem by reporting reflection-absorption infrared spectra (RAIRS) of cryogenic HF-H(2)O binary mixtures at various compositions prepared as nanoscopic films using molecular beam techniques. Optical constants for these cryogenic solutions [n(omega) and k(omega)] are obtained by iteratively solving Fresnel equations for stratified media. Modeling of the experimental RAIRS spectra allow for a quantitative interpretation of the complex interplay between multiple reflections, optical interference and absorption effects. The evolution of the strong absorption features in the intermediate 1000-3000 cm(-1) range with increasing HF concentration reveals the presence of various ionic dissociation intermediates that are trapped in the disordered H-bonded network of cryogenic hydrofluoric acid solutions. Our findings are discussed in light of the conventional interpretation of why hydrofluoric acid is a weak acid revealing molecular-level details of the mechanism for HF ionization that may be relevant to analogous elementary processes involved in the ionization of weak acids in aqueous solutions.

PEMISAHAN Zr – Hf SECARA SINAMBUNG MENGGUNAKAN MIXER SETTLER

Directory of Open Access Journals (Sweden)

Dwi Biyantoro

2017-01-01

Full Text Available ABSTRAK PEMISAHAN Zr – Hf SECARA SINAMBUNG MENGGUNAKANMIXER SETTLER. Telah dilakukan pemisahanZr – Hf secara sinambung menggunakan pengaduk pengenap (mixer settler 16 stage. Larutan umpan adalah zirkon nitrat dengan kadar Zr = 30786 ppm dan Hf = 499 ppm. Ekstraktan dipakai adalah solven 60 % TBP dalam kerosen dan larutan scrubbingyang dipakai adalah asam nitrat 1 M. Umpan masuk pada stageke 5 dikontakkan secara berlawanan arah dengan solven masuk pada stage ke 16 dan larutan scrubbing masuk pada stage ke 1. Tujuan penelitian ini adalah memisahkan unsur Zr dan Hf dari hasil olah pasir zirkon menggunakan solven TBP dengan alat mixer settler16 stage. Analisis umpan dan hasil proses pemisahan untuk zirkonium (Zr dilakukan dengan menggunakan alat pendar sinar-X, sedangkananalisis unsur hafnium (Hf menggunakan Analisis Pengaktifan Neutron (APN. Parameter penelitian dilakukan dengan variasi keasaman asam nitrat dalam umpan dan variasi waktu pada berbagai laju pengadukan. Hasil penelitian pemisahan unsur Zr dengan Hf diperolehkondisi optimum pada keasaman umpan 4 N HNO3, keseimbangan dicapai setelah 3jam dan laju pengadukan 3300 rpm. Hasil ekstrak  unsur zirkon (Zr diperoleh kadar sebesar 28577 ppm dengan efisiensi 92,76 % serta kadar pengotor hafnium (Hf sebesar 95 ppm. Kata Kunci: pemisahan Zr, Hf, ekstraksi, mixer settler, alat pendar sinar-X, APN. ABSTRACT SEPARATION of Zr - Hf CONTINUOUSLY USE THE MIXER SETTLER. Separation of Zr - Hf continuously using mixer settler 16 stage has been done. The feed solution is zircon nitrate concentration of Zr = 30786 ppm  and Hf = 499 ppm. As the solvent used extractant 60 % TBP in 40 % kerosene. Nitric acid solution used srubbing 1 M. The feed entered into stage to 5 is contacted with solvents direction on the stage to 16 and the scrubbing solution enter the stage to 1. The purpose of this study is to separate Zr and Hf of the results from the process of zircon sand using solvent TBP using 16 stage

Real-time calibration of a feedback trap

OpenAIRE

Gavrilov, Momčilo; Jun, Yonggun; Bechhoefer, John

2014-01-01

Feedback traps use closed-loop control to trap or manipulate small particles and molecules in solution. They have been applied to the measurement of physical and chemical properties of particles and to explore fundamental questions in the non-equilibrium statistical mechanics of small systems. These applications have been hampered by drifts in the electric forces used to manipulate the particles. Although the drifts are small for measurements on the order of seconds, they dominate on time sca...

The magnetic properties of $^{\\rm 177}$Hf and $^{\\rm 180}$Hf in the strong coupling deformed model

OpenAIRE

Muto, S.; Stone, N. J.; Bingham, C. R.; Stone, J. R.; Walker, P. M.; Audi, G.; Gaulard, C.; Köster, U.; Nikolov, J.; Nishimura, K.; Ohtsubo, T.; Podolyak, Z.; Risegari, L.; Simpson, G. S.; Veskovic, M.

2014-01-01

This paper reports NMR measurements of the magnetic dipole moments of two high-K isomers, the 37/2$^-$, 51.4 m, 2740 keV state in $^{\\rm 177}$Hf and the 8$^-$, 5.5 h, 1142 keV state in $^{\\rm 180}$Hf by the method of on-line nuclear orientation. Also included are results on the angular distributions of gamma transitions in the decay of the $^{\\rm 177}$Hf isotope. These yield high precision E2/M1 multipole mixing ratios for transitions in bands built on the 23/2$^+$, 1.1 s, isomer at 1315 keV ...

Hf isotope evidence for a hidden mantle reservoir

DEFF Research Database (Denmark)

Bizzarro, Martin; Simonetti, A.; Stevenson, R.K.

2002-01-01

High-precision Hf isotopic analyses and U-Pb ages of carbonatites and kimberlites from Greenland and eastern North America, including Earth's oldest known carbonatite (3 Ga), indicate derivation from an enriched mantle source. This previously unidentified mantle reservoir-marked by an unradiogenic...... Hf isotopic composition and preserved in the deep mantle for at least 3 b.y.-may account for the mass imbalance in Earth's Hf-Nd budget. The Hf isotopic data presented here support a common mantle source region and genetic link between carbonatite and some oceanic-island basalt volcanoes....

Magnetic properties of Hf177 and Hf180 in the strong-coupling deformed model

Science.gov (United States)

Muto, S.; Stone, N. J.; Bingham, C. R.; Stone, J. R.; Walker, P. M.; Audi, G.; Gaulard, C.; Köster, U.; Nikolov, J.; Nishimura, K.; Ohtsubo, T.; Podolyak, Z.; Risegari, L.; Simpson, G. S.; Veskovic, M.; Walters, W. B.

2014-04-01

This paper reports NMR measurements of the magnetic dipole moments of two high-K isomers, the 37/2-, 51.4 m, 2740 keV state in Hf177 and the 8-, 5.5 h, 1142 keV state in Hf180 by the method of on-line nuclear orientation. Also included are results on the angular distributions of γ transitions in the decay of the Hf177 isotope. These yield high precision E2/M1 multipole mixing ratios for transitions in bands built on the 23/2+, 1.1 s, isomer at 1315 keV and on the 9/2+, 0.663 ns, isomer at 321 keV. The new results are discussed in the light of the recently reported finding of systematic dependence of the behavior of the gR parameter upon the quasiproton and quasineutron make up of high-K isomeric states in this region.

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Science.gov (United States)

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-01-01

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2018-05-01

Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

Single and dual fiber nano-tip optical tweezers: trapping and analysis.

Science.gov (United States)

Decombe, Jean-Baptiste; Huant, Serge; Fick, Jochen

2013-12-16

An original optical tweezers using one or two chemically etched fiber nano-tips is developed. We demonstrate optical trapping of 1 micrometer polystyrene spheres at optical powers down to 2 mW. Harmonic trap potentials were found in the case of dual fiber tweezers by analyzing the trapped particle position fluctuations. The trap stiffness was deduced using three different models. Consistent values of up to 1 fN/nm were found. The stiffness linearly decreases with decreasing light intensity and increasing fiber tip-to-tip distance.

Theoretical predictions of hydrolysis and complex formation of group-4 elements Zr, Hf and Rf in HF and HCl solutions

International Nuclear Information System (INIS)

Pershina, V.; Trubert, D.; Le Naour, C.; Kratz, J.V.

2002-01-01

Fully relativistic molecular density-functional calculations of the electronic structures of hydrated, hydrolyzed and fluoride/chloride complexes have been performed for group-4 elements Zr, Hf, and element 104, Rf. Using the electronic density distribution data, relative values of the free energy change for hydrolysis and complex formation reactions were defined. The results show the following trend for the first hydrolysis step of the cationic species: Zr>Hf>Rf in agreement with experiments. For the complex formation in HF solutions, the trend to a decrease from Zr to Hf is continued with Rf, provided no hydrolysis takes place. At pH>0, further fluorination of hydrolyzed species or fluoro-complexes has an inversed trend in the group Rf≥Zr>Hf, with the difference between the elements being very small. For the complex formation in HCl solutions, the trend is continued with Rf, so that Zr>Hf>Rf independently of pH. A decisive energetic factor in hydrolysis or complex formation processes proved to be a predominant electrostatic metal-ligand interaction. Trends in the K d (distribution coefficient) values for the group-4 elements are expected to follow those of the complex formation

Second generation measurement of the electric dipole moment of the electron using trapped ThF+ ions

Science.gov (United States)

Ng, Kia Boon; Zhou, Yan; Gresh, Daniel; Cairncross, William; Grau, Matthew; Ni, Yiqi; Ye, Jun; Cornell, Eric

2016-05-01

ThF+ has been chosen as the candidate for a second generation measurement of the electric dipole moment of the electron (eEDM). Compared to the current HfF+ eEDM experiment, ThF+ has several advantages: (i) the eEDM-sensitive state (3Δ1) is the ground state, which facilitates a long coherence time; (ii) its effective electric field (38 GV/cm) is 50% larger than that of HfF+, which promises a direct increase of the eEDM sensitivity; and (iii) the ionization energy of neutral ThF is lower than its dissociation energy, which introduces greater flexibility in rotational state-selective photoionization via core-nonpenetrating Rydberg states. Here, we present progress of our experimental setup, preliminary spectroscopic data of multi-photon ionization, and discussions of new features in ion trapping, state preparation and population readout.

Oxidation behavior of Hf-modified platinum aluminide coatings during thermal cycling

Directory of Open Access Journals (Sweden)

Liya Ye

2018-02-01

Full Text Available Platinum aluminide coatings with different Hf contents were fabricated by using HfCl4. The oxidation kinetics and the rumpling behavior of oxide scale were investigated. After thermal cycling, the coating with 0.46 wt% Hf showed least weight gain. With the increase of Hf content, rumpling extent of the scale decreased. Meanwhile, HfO2 preferentially formed in the scale resulting in the increase of scale thickness. The oxidation of excessive Hf even caused the spallation of the scale. The results in the present study indicate that although Hf plays an important role in decreasing rumpling extent of TGO, the oxidation of Hf decreases the adhesion of the scale. Keywords: Pt-Al coating, Hf, Oxidation, Rumpling

Deployable micro-traps to sequester motile bacteria

Science.gov (United States)

di Giacomo, Raffaele; Krödel, Sebastian; Maresca, Bruno; Benzoni, Patrizia; Rusconi, Roberto; Stocker, Roman; Daraio, Chiara

2017-04-01

The development of strategies to reduce the load of unwanted bacteria is a fundamental challenge in industrial processing, environmental sciences and medical applications. Here, we report a new method to sequester motile bacteria from a liquid, based on passive, deployable micro-traps that confine bacteria using micro-funnels that open into trapping chambers. Even in low concentrations, micro-traps afford a 70% reduction in the amount of bacteria in a liquid sample, with a potential to reach >90% as shown by modelling improved geometries. This work introduces a new approach to contain the growth of bacteria without chemical means, an advantage of particular importance given the alarming growth of pan-drug-resistant bacteria.

Effects of HfB2 and HfN Additions on the Microstructures and Mechanical Properties of TiB2-Based Ceramic Tool Materials

Science.gov (United States)

An, Jing; Song, Jinpeng; Liang, Guoxing; Gao, Jiaojiao; Xie, Juncai; Cao, Lei; Wang, Shiying; Lv, Ming

2017-01-01

The effects of HfB2 and HfN additions on the microstructures and mechanical properties of TiB2-based ceramic tool materials were investigated. The results showed that the HfB2 additive not only can inhibit the TiB2 grain growth but can also change the morphology of some TiB2 grains from bigger polygons to smaller polygons or longer ovals that are advantageous for forming a relatively fine microstructure, and that the HfN additive had a tendency toward agglomeration. The improvement of flexural strength and Vickers hardness of the TiB2-HfB2 ceramics was due to the relatively fine microstructure; the decrease of fracture toughness was ascribed to the formation of a weaker grain boundary strength due to the brittle rim phase and the poor wettability between HfB2 and Ni. The decrease of the flexural strength and Vickers hardness of the TiB2-HfN ceramics was due to the increase of defects such as TiB2 coarse grains and HfN agglomeration; the enhancement of fracture toughness was mainly attributed to the decrease of the pore number and the increase of the rim phase and TiB2 coarse grains. The toughening mechanisms of TiB2-HfB2 ceramics mainly included crack bridging and transgranular fracture, while the toughening mechanisms of TiB2-HfN ceramics mainly included crack deflection, crack bridging, transgranular fracture, and the core-rim structure. PMID:28772821

Effects of HfB2 and HfN Additions on the Microstructures and Mechanical Properties of TiB2-Based Ceramic Tool Materials

Directory of Open Access Journals (Sweden)

Jing An

2017-04-01

Full Text Available The effects of HfB2 and HfN additions on the microstructures and mechanical properties of TiB2-based ceramic tool materials were investigated. The results showed that the HfB2 additive not only can inhibit the TiB2 grain growth but can also change the morphology of some TiB2 grains from bigger polygons to smaller polygons or longer ovals that are advantageous for forming a relatively fine microstructure, and that the HfN additive had a tendency toward agglomeration. The improvement of flexural strength and Vickers hardness of the TiB2-HfB2 ceramics was due to the relatively fine microstructure; the decrease of fracture toughness was ascribed to the formation of a weaker grain boundary strength due to the brittle rim phase and the poor wettability between HfB2 and Ni. The decrease of the flexural strength and Vickers hardness of the TiB2-HfN ceramics was due to the increase of defects such as TiB2 coarse grains and HfN agglomeration; the enhancement of fracture toughness was mainly attributed to the decrease of the pore number and the increase of the rim phase and TiB2 coarse grains. The toughening mechanisms of TiB2-HfB2 ceramics mainly included crack bridging and transgranular fracture, while the toughening mechanisms of TiB2-HfN ceramics mainly included crack deflection, crack bridging, transgranular fracture, and the core-rim structure.

Behaviour at the indicator scale of the elements Zr, Hf and 104, Nb,Ta and Pa (105) in very complexation media; Comportement a l`echelle des indicateurs des elements Zr, Hf, et 104, Nb, Ta, et Pa (105) en milieux tres complexants

Energy Technology Data Exchange (ETDEWEB)

Monroy Guzman, F. [Institut de Physique Nucleaire, CNRS - IN2P3 Universite Paris Sud, 91406 Orsay Cedex (France)

1997-12-31

In order to determine the chemical properties of the trans-actinide elements of Z = 104 and 105 in aqueous solutions we studied their behaviour to ion exchange resin in different complex media. Due to the very short lifetimes (some tens of seconds) et to the low yield of these elements (a few atoms per irradiation hour) only very fast radiochemical techniques can be used. These severe constraints impose comparative studies of these elements with their most likely homologues to be carried out. The corresponding homologues were the elements of group 4 (Zr and Hf) for the element 104 and the elements of group 5 (Nb and Ta) and also Pa for the element 105. The complexation properties of the elements at indicator scale were determined in the media of HF, NH{sub 4}/HClO{sub 4}, NH{sub 4}SCN/HClO{sub 4}, NH{sub 4}SCN/HF and HCl/HF by ion exchange chromatography. The studies in fluorides media allowed us to identify the complexes in solution and to explain the shape of the experimentally observed sorption curves. The decrease of sorption for higher acid concentration in case of HF/HCl medium was interpreted by formation of chloro-fluoro-complexes. In case of the mixture NH{sub 4}SCN/HF, the particularly pronounced anti-synergic effects were observed and discussed. At the same time studies of the Hf and Ta short-lived isotopes were carried out by means of the RACHEL facility operating by the Orsay Tandem accelerator. These realistic simulations allowed optimization of different production, transportation and separation stages of the trans-actinide elements. The two experiments of 104 element production showed that this element forms in HF very stable anionic complexes similarly to its homologues Zr and Hf. (authors). 181 refs.

Behaviour at the indicator scale of the elements Zr, Hf and 104, Nb,Ta and Pa (105) in very complexation media; Comportement a l`echelle des indicateurs des elements Zr, Hf, et 104, Nb, Ta, et Pa (105) en milieux tres complexants

Energy Technology Data Exchange (ETDEWEB)

Monroy Guzman, F [Institut de Physique Nucleaire, CNRS - IN2P3 Universite Paris Sud, 91406 Orsay Cedex (France)

1998-12-31

In order to determine the chemical properties of the trans-actinide elements of Z = 104 and 105 in aqueous solutions we studied their behaviour to ion exchange resin in different complex media. Due to the very short lifetimes (some tens of seconds) et to the low yield of these elements (a few atoms per irradiation hour) only very fast radiochemical techniques can be used. These severe constraints impose comparative studies of these elements with their most likely homologues to be carried out. The corresponding homologues were the elements of group 4 (Zr and Hf) for the element 104 and the elements of group 5 (Nb and Ta) and also Pa for the element 105. The complexation properties of the elements at indicator scale were determined in the media of HF, NH{sub 4}/HClO{sub 4}, NH{sub 4}SCN/HClO{sub 4}, NH{sub 4}SCN/HF and HCl/HF by ion exchange chromatography. The studies in fluorides media allowed us to identify the complexes in solution and to explain the shape of the experimentally observed sorption curves. The decrease of sorption for higher acid concentration in case of HF/HCl medium was interpreted by formation of chloro-fluoro-complexes. In case of the mixture NH{sub 4}SCN/HF, the particularly pronounced anti-synergic effects were observed and discussed. At the same time studies of the Hf and Ta short-lived isotopes were carried out by means of the RACHEL facility operating by the Orsay Tandem accelerator. These realistic simulations allowed optimization of different production, transportation and separation stages of the trans-actinide elements. The two experiments of 104 element production showed that this element forms in HF very stable anionic complexes similarly to its homologues Zr and Hf. (authors). 181 refs.

Surface Traps in Colloidal Quantum Dots: A Combined Experimental and Theoretical Perspective.

Science.gov (United States)

Giansante, Carlo; Infante, Ivan

2017-10-19

Surface traps are ubiquitous to nanoscopic semiconductor materials. Understanding their atomistic origin and manipulating them chemically have capital importance to design defect-free colloidal quantum dots and make a leap forward in the development of efficient optoelectronic devices. Recent advances in computing power established computational chemistry as a powerful tool to describe accurately complex chemical species and nowadays it became conceivable to model colloidal quantum dots with realistic sizes and shapes. In this Perspective, we combine the knowledge gathered in recent experimental findings with the computation of quantum dot electronic structures. We analyze three different systems: namely, CdSe, PbS, and CsPbI 3 as benchmark semiconductor nanocrystals showing how different types of trap states can form at their surface. In addition, we suggest experimental healing of such traps according to their chemical origin and nanocrystal composition.

A polarization system for persistent chemical detection

Science.gov (United States)

Craven-Jones, Julia; Appelhans, Leah; Couphos, Eric; Embree, Todd; Finnegan, Patrick; Goldstein, Dennis; Karelitz, David; LaCasse, Charles; Luk, Ting S.; Mahamat, Adoum; Massey, Lee; Tanbakuchi, Anthony; Washburn, Cody; Vigil, Steven

2015-09-01

We report on the development of a prototype polarization tag based system for detecting chemical vapors. The system primarily consists of two components, a chemically sensitive tag that experiences a change in its optical polarization properties when exposed to a specific chemical of interest, and an optical imaging polarimeter that is used to measure the polarization properties of the tags. Although the system concept could be extended to other chemicals, for the initial system prototype presented here the tags were developed to be sensitive to hydrogen fluoride (HF) vapors. HF is used in many industrial processes but is highly toxic and thus monitoring for its presence and concentration is often of interest for personnel and environmental safety. The tags are periodic multilayer structures that are produced using standard photolithographic processes. The polarimetric imager has been designed to measure the degree of linear polarization reflected from the tags in the short wave infrared. By monitoring the change in the reflected polarization signature from the tags, the polarimeter can be used to determine if the tag was exposed to HF gas. In this paper, a review of the system development effort and preliminary test results are presented and discussed, as well as our plan for future work.

The magnetic hyperfine field in the 181Ta site in the Co2HfAl and Co2HfGa Heusler alloys

International Nuclear Information System (INIS)

Silva, R. da.

1979-01-01

The hyperfine magnetic fields at 181 Ta nuclei in Heusler alloys Co 2 HfZ (Z=Al, Ga) have been measured using the time differential perturbed gamma-gamma angular correlation (TDPAC) method. The hyperfine fields obtained from these measurements at the liquid nitrogen temperature are -189 and +- 150 kOersted for Co 2 HfAl and Co 2 HfGa, respectively. The concept that the hyperfine field at the Y site is similar to the solute fields in Fe, Co, Ni and Gd matrices is corroborated. We have verified that ratios H sub(hf) sub(Ta)/T sub(c) and H sub(hf) sub(Ta)μ sub(Co) in Co 2 HfZ compounds (Z=Al, Ga, Sn) do not depend on the nature of Z element. However a dependence in the value of observed field with the s-p element in Z site was noticed. We feel that the samples are not completely ordered cubic as observed by the quadrupole interaction measurements. The results are interpreted in terms of the Campbell-Blandin formalism, and it is shown that the spin polarization of conduction electrons at Hf and Ta have opposite signs. (Author) [pt

Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

Science.gov (United States)

Zhang, Hongpeng; Jia, Renxu; Lei, Yuan; Tang, Xiaoyan; Zhang, Yimen; Zhang, Yuming

2018-02-01

In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal-oxide-semiconductor (MOS) capacitors under positive and negative biases are investigated using the current-voltage (I-V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37-2.19 MV cm-1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole-Frenkel emission dominates under negatively biased fields of 1.92-4.83 MV cm-1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31  ±  0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04  ×  1013 cm-2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C-V hysteresis of 0.76 V, low interface state density (D it) close to 1  ×  1012 eV-1 cm-2, and low leakage current density of 2.38  ×  10-5 A cm-2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

Um estudo teórico de propriedades moleculares em complexos de hidrogênio trimoleculares C2H4···2HF, C2H2···2HF e C3h6···2HF A theoretical study of molecular properties of C2H4···2HF, C2H2···2HF AND C3H6···2HF trimolecular hydrogen-bonded complexes

Directory of Open Access Journals (Sweden)

Boaz G. Oliveira

2008-01-01

Full Text Available We present a theoretical study of molecular properties in C2H4···2HF, C2H2···2HF and C3H6···2HF trimolecular hydrogen-bonded complexes. From B3LYP/6-311++G(d,p calculations, the most important structural deformations are related to the C=C (C2H4, C≡C (C2H2, C-C (C3H6 and HF bond lengths. According to the Bader's atoms in molecules and CHELPG calculations, it was identified a tertiary interaction between the fluorine atom of the second hydrofluoric acid molecule and hydrogen atoms of the ethylene and acetylene within the C2H4···2HF and C2H2···2HF complexes, respectively. Additionally, the evaluation of the infrared spectrum characterized the new vibrational modes and bathochromic effect of the HF molecules.

Chemical characterization of individual microparticles using an ion trap: real-time chemical analysis of aerosol particles

International Nuclear Information System (INIS)

Yang, Mo; Whitten, W.B.; Reilly, P.T.A.; Gieray, R.; Ramsey, J.M.

1996-01-01

This paper describes initial experiments to perform laser ablation mass spectrometry in real time on airborne microparticles. The microparticles are sampled directly from the air by a particle inlet system into the vacuum chamber of a mass spectrometer. An incoming particle is detected as it passes through two CW laser beams and a pulsed laser is triggered to intercept the particle for laser ablation/ionization in the mass spectrometer. The initial studies were made with an existing ion trap mass spectrometer with the particle sampling occurring at the center of the trap electrodes. Performance of the inlet system, particle detection, and preliminary results are described

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

2015-01-28

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

International Nuclear Information System (INIS)

Elleuch, Omar; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2015-01-01

The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor

An EPR study of positive hole transfer and trapping in irradiated frozen solutions containing aromatic traps

International Nuclear Information System (INIS)

Egorov, A.V.; Zezin, A.A.; Feldman, V.I.

2002-01-01

Complete text of publication follows. Processes of positive hole migration and trapping are of basic significance for understanding of the primary events in the radiation chemistry of solid molecular systems. Specific interest is concerned with the case, when ionization energies of 'hole traps' are rather close, so one may expect 'fine tuning' effects resulting from variations in conformation, weak interactions, molecular packing, etc. In this contribution we report the results of EPR study of formation of radical cations in irradiated frozen halocarbon solutions containing aromatic molecules of different structure. Using the 'two-trap' model made it possible to obtain an evidence for efficient long-range trap-to-trap positive hole transfer between alkyl benzene molecules with close ionization energies distributed in the matrices with high ionization potentials. The distance of transfer was found to be 2-4 nm. In the case of frozen solutions containing ethylbenzene and toluene, it was found that the efficiency and direction of hole transfer was controlled by the conformation of ethylbenzene radical cation. The study of positive hole localization in 'bridged' diphenyls of Ph(CH 2 ) n Ph type revealed that the structure of radical cations of these species was affected by local environment (type of halocarbon matrix) and the conformational flexibility of 'bridge'. In summary, we may conclude that migration and localization of positive hole in rigid systems containing aromatic 'traps' is quite sensitive to rather subtle effects. This conclusion may be of common significance for the radiation chemistry of systems with physical dispersion of the traps of similar chemical structure (e.g. macromolecules, adsorbed molecules, etc.)

Collision-Induced Dissociation Study of Strong Hydrogen-Bonded Cluster Ions Y-(HF) n (Y=F, O2) Using Atmospheric Pressure Corona Discharge Ionization Mass Spectrometry Combined with a HF Generator.

Science.gov (United States)

Sakamoto, Kenya; Sekimoto, Kanako; Takayama, Mitsuo

2017-01-01

Hydrogen fluoride (HF) was produced by a homemade HF generator in order to investigate the properties of strong hydrogen-bonded clusters such as (HF) n . The HF molecules were ionized in the form of complex ions associated with the negative core ions Y - produced by atmospheric pressure corona discharge ionization (APCDI). The use of APCDI in combination with the homemade HF generator led to the formation of negative-ion HF clusters Y - (HF) n (Y=F, O 2 ), where larger clusters with n ≥4 were not detected. The mechanisms for the formation of the HF, F - (HF) n , and O 2 - (HF) n species were discussed from the standpoints of the HF generator and APCDI MS. By performing energy-resolved collision-induced dissociation (CID) experiments on the cluster ions F - (HF) n ( n =1-3), the energies for the loss of HF from F - (HF) 3 , F - (HF) 2 , and F - (HF) were evaluated to be 1 eV or lower, 1 eV or higher, and 2 eV, respectively, on the basis of their center-of-mass energy ( E CM ). These E CM values were consistent with the values of 0.995, 1.308, and 2.048 eV, respectively, obtained by ab initio calculations. The stability of [O 2 (HF) n ] - ( n =1-4) was discussed on the basis of the bond lengths of O 2 H-F - (HF) n and O 2 - H-F(HF) n obtained by ab initio calculations. The calculations indicated that [O 2 (HF) 4 ] - separated into O 2 H and F - (HF) 3 .

Physical and chemical study of single aerosol particles using optical trapping cavity ringdown spectroscopy

Science.gov (United States)

2016-08-30

scope that views the trapped particle walking through the ringdown beam step by step. (b) An image that shows the traces of the particle (MWCNT... walking through the RD beam . 5 a b c Fig.3 The OT-CRDS single particle scope views oscillations of a trapped particle. (a) Image of a trapped...and walking single carbon- nanotube particles of ?50 µm in size and viewing those properties via changes of ringdown time. This single- aerosol

Sorbent selection and design considerations for uranium trapping

International Nuclear Information System (INIS)

Schultz, R.M.; Hobbs, W.E.; Norton, J.L.; Stephenson, M.J.

1981-07-01

The efficient removal of UF 6 from effluent streams can be accomplished through the selection of the best solid sorbent and the implementation of good design principles. Pressure losses, sorbent capacity, reaction kinetics, sorbent regeneration/uranium recovery requirements and the effects of other system components are the performance factors which are summarized. The commonly used uranium trapping materials highlighted are sodium fluoride, H-151 alumina, XF-100 alumina, and F-1 alumina. Sorbent selection and trap design have to be made on a case-by-case basis but the theoretical modeling studies and the evaluation of the performance factors presented can be used as a guide for other chemical trap applications

Investigation of new type Cu-Hf-Al bulk glassy alloys

International Nuclear Information System (INIS)

Nagy, E; Ronto, V; Solyom, J; Roosz, A

2009-01-01

In the last years new type Cu-Hf-Al ternary alloys were developed with high glass forming ability and ductility. The addition of Al to Cu-Hf alloys results in improvements in glass formation, thermal stability and mechanical properties of these alloys. We have investigated new Cu-based bulk amorphous alloys in Cu-Hf-Al ternary system. The alloys with Cu 49 Hf 42 Al 9 , Cu 46 Hf 45 Al 9 , Cu 50 Hf 42.5 Al 7.5 and Cu 50 Hf 45 Al 5 compositions were prepared by arc melting. The samples were made by centrifugal casting and were investigated by X-ray diffraction method. Thermodynamic properties were examined by differential scanning calorimetry and the structure of the crystallising phases by scanning electron microscopy. The determination of liquidus temperatures of alloys were measured by differential thermal analysis.

Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

Science.gov (United States)

Sales, T. S. N.; Cavalcante, F. H. M.; Bosch-Santos, B.; Pereira, L. F. D.; Cabrera-Pasca, G. A.; Freitas, R. S.; Saxena, R. N.; Carbonari, A. W.

2017-05-01

In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2) nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with electron back scattering diffraction (EBSD), and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%).

Stable tetragonal phase and magnetic properties of Fe-doped HfO2 nanoparticles

Directory of Open Access Journals (Sweden)

T. S. N. Sales

2017-05-01

Full Text Available In this paper, the effect in structural and magnetic properties of iron doping with concentration of 20% in hafnium dioxide (HfO2 nanoparticles is investigated. HfO2 is a wide band gap oxide with great potential to be used as high-permittivity gate dielectrics, which can be improved by doping. Nanoparticle samples were prepared by sol-gel chemical method and had their structure, morphology, and magnetic properties, respectively, investigated by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM with electron back scattering diffraction (EBSD, and magnetization measurements. TEM and SEM results show size distribution of particles in the range from 30 nm to 40 nm with small dispersion. Magnetization measurements show the blocking temperature at around 90 K with a strong paramagnetic contribution. XRD results show a major tetragonal phase (94%.

MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlO{sub x} structures for non-volatile memory applications

Energy Technology Data Exchange (ETDEWEB)

Faita, F. L., E-mail: fabriciofaita@gmail.com [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Departamento de Física, Universidade Federal de Santa Catarina, Campus Trindade, 88040-900 Florianópolis, SC (Brazil); Silva, J. P. B., E-mail: josesilva@fisica.uminho.pt [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, 4169-007 Porto (Portugal); Pereira, M.; Gomes, M. J. M. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

2015-12-14

In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlO{sub x} layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlO{sub x}(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlO{sub x} thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are ≈10{sup 2} and ≈5 × 10{sup 5}, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.

Thermodynamics of HfCl/sub 4/-KCl molten mixtures containing HfCl/sub 4/ up to 33. 3 mol. per cent

Energy Technology Data Exchange (ETDEWEB)

Smirnov, M V; Salyulev, A B; Kudyakov, V Ya [AN SSSR, Sverdlovsk. Inst. Ehlektrokhimii

1980-05-01

Based on measurements of saturated vapour pressure in components of melted mixtures of HfCl/sub 4/-KCl, depending on temperature and concentration, calculated are the results of changes in activity coefficients of hafnium tetrachloride and potassium chloride on transition from diluted solutions, where the Henry law is met, to those concentrated where the law is disobeyed. Growth in the activity coefficient of HfCl/sub 4/ is due to dissociation of complex groups of HfCl/sub 6//sup 2 -/ into complexes with a lesser number of ligands and decreasing relative binding energy of Hf/sup 4 +/-Cl/sup -/ there. In this case, marked changes take place in partial enthalpy and entropy of hafnium tetrachloride mixing. Similar dependences are observed for potassium chloride, but they are expressed considerably weaker. Evaporation enthalpy and entropy are calculated for HfCl/sub 4/ and KCl monomers from their melted mixtures of various concentrations.

In-situ atomic layer deposition growth of Hf-oxide

International Nuclear Information System (INIS)

Karavaev, Konstantin

2010-01-01

We have grown HfO 2 on Si(001) by atomic layer deposition (ALD) using HfCl 4 , TEMAHf, TDMAHf and H 2 O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl 4 experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO 2 . The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO 2 : contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

In-situ atomic layer deposition growth of Hf-oxide

Energy Technology Data Exchange (ETDEWEB)

Karavaev, Konstantin

2010-06-17

We have grown HfO{sub 2} on Si(001) by atomic layer deposition (ALD) using HfCl{sub 4}, TEMAHf, TDMAHf and H{sub 2}O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and X-ray absorption spectroscopy. We observed the changes occurring in the Si 2p, O 1s, Hf 4f, Hf 4d, and Cl 2p (for HfCl{sub 4} experiment) core level lines after each ALD cycle up to the complete formation of two layers of HfO{sub 2}. The investigation was carried out in situ giving the possibility to determine the properties of the grown film after every ALD cycle or even after a half cycle. This work focused on the advantages in-situ approach in comparison with ex-situ experiments. The study provides to follow the evolution of the important properties of HfO{sub 2}: contamination level, density and stoichiometry, and influence of the experimental parameters to the interface layer formation during ALD. Our investigation shows that in-situ XPS approach for ALD gives much more information than ex-situ experiments. (orig.)

Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO{sub 2}/SiO{sub 2} gate dielectric stacks

Energy Technology Data Exchange (ETDEWEB)

Taube, Andrzej [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Mroczynski, Robert, E-mail: rmroczyn@elka.pw.edu.pl [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Korwin-Mikke, Katarzyna [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Gieraltowska, Sylwia [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Szmidt, Jan [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Piotrowska, Anna [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-01

In this work, we report on effects of post-deposition annealing on electrical characteristics of metal-insulator-semiconductor (MIS) structures with HfO{sub 2}/SiO{sub 2} double gate dielectric stacks. Obtained results have shown the deterioration of electro-physical properties of MIS structures, e.g. higher interface traps density in the middle of silicon forbidden band (D{sub itmb}), as well as non-uniform distribution and decrease of breakdown voltage (U{sub br}) values, after annealing above 400 Degree-Sign C. Two potential hypothesis of such behavior were proposed: the formation of interfacial layer between hafnia and silicon dioxide and the increase of crystallinity of HfO{sub 2} due to the high temperature treatment. Furthermore, the analysis of conduction mechanisms in investigated stacks revealed Poole-Frenkel (P-F) tunneling at broad range of electric field intensity.

Thermoelectric properties of doped BaHfO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Dixit, Chandra Kr., E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Dr. Shakuntala Misra National Rehabilitation University, Lucknow-229001, U.P India (India); Bhamu, K. C. [Department of Physics, Goa University, Goa-403 206 (India); Sharma, Ramesh, E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Feroze Gandhi Institute of Engineering & Technology, Raebareli-229001, U.P India (India)

2016-05-06

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO{sub 3} by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO{sub 3} doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO{sub 3} is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO{sub 3} is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

Optical trapping for analytical biotechnology.

Science.gov (United States)

Ashok, Praveen C; Dholakia, Kishan

2012-02-01

We describe the exciting advances of using optical trapping in the field of analytical biotechnology. This technique has opened up opportunities to manipulate biological particles at the single cell or even at subcellular levels which has allowed an insight into the physical and chemical mechanisms of many biological processes. The ability of this technique to manipulate microparticles and measure pico-Newton forces has found several applications such as understanding the dynamics of biological macromolecules, cell-cell interactions and the micro-rheology of both cells and fluids. Furthermore we may probe and analyse the biological world when combining trapping with analytical techniques such as Raman spectroscopy and imaging. Copyright © 2011 Elsevier Ltd. All rights reserved.

Transfer the multiscale texture of crystalline Si onto thin-film micromorph cell by UV nanoimprint for light trapping

Science.gov (United States)

Liu, Daiming; Wang, Qingkang; Wang, Qing

2018-05-01

Surface texturing is of great significance in light trapping for solar cells. Herein, the multiscale texture, consisting of microscale pyramids and nanoscale porous arrangement, was fabricated on crystalline Si by KOH etching and Ag-assisted HF etching processes and subsequently replicated onto glass with high fidelity by UV nanoimprint method. Light trapping of the multiscale texture was studied by spectral (reflectance, haze ratio) characterizations. Results reveal the multiscale texture provides the broadband reflection reducing, the highlighted light scattering and the additional self-cleaning behaviors. Compared with bare cell, the multiscale textured micromorph cell achieves a 4% relative increase in power conversion efficiency. This surface texturing route paves a promising way for developing low-cost, large-scale and high-efficiency solar applications.

Molecular Structure and Chemical Shift Assignments of 4-(2-Methoxy-4-Methylphenoxy)Phthalonitrile (C16H12N2O2) By DFT And AB Initio HF Calculations

International Nuclear Information System (INIS)

Tarcan, E.

2008-01-01

The molecular geometry, gauge including atomic orbital (GIAO) 1 H and 13 C chemical shift values of 4-(2-Methoxy-4-methylphenoxy)phthalonitrile (C 1 6H 1 2N 2 O 2 ) in the ground state have been calculated by using the Hartree-Fock (HF) and density functional methods (B3LYP and BLYP) with 6-31G(d) basis set. The results of the optimized molecular structure are presented and compared with the experimental X-ray diffraction. The optimized bond length numbers with bond angels are in good agreement with the X-ray data

Advanced Quadrupole Ion Trap Instrumentation for Low Level Vehicle Emissions Measurements

International Nuclear Information System (INIS)

McLuckey, S.A.

1997-01-01

Quadrupole ion trap mass spectrometry has been evaluated for its potential use in vehicle emissions measurements in vehicle test facilities as an analyzer for the top 15 compounds contributing to smog generation. A variety of ionization methods were explored including ion trap in situ chemical ionization, atmospheric sampling glow discharge ionization, and nitric oxide chemical ionization in a glow discharge ionization source coupled with anion trap mass spectrometer. Emphasis was placed on the determination of hydrocarbons and oxygenated hydrocarbons at parts per million to parts per billion levels. Ion trap in situ water chemical ionization and atmospheric sampling glow discharge ionization were both shown to be amendable to the analysis of arenes, alcohols, aldehydes and, to some degree, alkenes. Atmospheric sampling glow discharge also generated molecular ions of methy-t-butyl ether (MTBE). Neither of these ionization methods, however, were found to generate diagnostic ions for the alkanes. Nitric oxide chemical ionization, on the other hand, was found to yield diagnostic ions for alkanes, alkenes, arenes, alcohols, aldehydes, and MTBE. The ability to measure a variety of hydrocarbons present at roughly 15 parts per billion at measurement rates of 3 Hz was demonstrated. All of the ions with potential to serve as parent ions in a tandem mass spectrometry experiment were found to yield parent-to-product conversion efficiencies greater than 75%. The flexibility afforded to the ion trap by use of tailored wave-forms applied to the end-caps allows parallel monitoring schemes to be devised that provide many of the advantages of tandem mass spectrometry without major loss in measurement rate. A large loss in measurement rate would ordinarily result from the use of conventional tandem mass spectrometry experiments carried out in series for a large number of targeted components. These results have demonstrated that the ion trap has an excellent combination of

HF-START: A Regional Radio Propagation Simulator

Science.gov (United States)

Hozumi, K.; Maruyama, T.; Saito, S.; Nakata, H.; Rougerie, S.; Yokoyama, T.; Jin, H.; Tsugawa, T.; Ishii, M.

2017-12-01

HF-START (HF Simulator Targeting for All-users' Regional Telecommunications) is a user-friendly simulator developed to meet the needs of space weather users. Prediction of communications failure due to space weather disturbances is of high priority. Space weather users from various backgrounds with high economic impact, i.e. airlines, telecommunication companies, GPS-related companies, insurance companies, international amateur radio union, etc., recently increase. Space weather information provided by Space Weather Information Center of NICT is, however, too professional to be understood and effectively used by the users. To overcome this issue, I try to translate the research level data to the user level data based on users' needs and provide an immediate usable data. HF-START is positioned to be a space weather product out of laboratory based truly on users' needs. It is originally for radio waves in HF band (3-30 MHz) but higher frequencies up to L band are planned to be covered. Regional ionospheric data in Japan and southeast Asia are employed as a reflector of skywave mode propagation. GAIA (Ground-to-topside model of Atmosphere and Ionosphere for Aeronomy) model will be used as ionospheric input for global simulation. To evaluate HF-START, an evaluation campaign for Japan region will be launched in coming months. If the campaign successes, it will be expanded to southeast Asia region as well. The final goal of HF-START is to provide the near-realtime necessary radio parameters as well as the warning message of radio communications failure to the radio and space weather users.

Ferromagnetic characteristics of HfFe2

International Nuclear Information System (INIS)

Novakovic, N.; Belosevic-Cavor, J.; Cekic, B.; Manasijevic, M.; Milosevic, Z. . E-mail address of correspoding author: novnik@rt270.vin.bg.ac.yu; Novakovic, N.)

2003-01-01

The magnetic hyperfine fields at 181 Ta ion-probe sites in the HfFe 2 polycrystalline binary compound were measured using the time-differential perturbed angular correlation (TDPAC) method. Measurements were performed in the absence of polarizing external magnetic field, at room temperature. The existence of two different structures, dominant cubic MgCu 2 -type and hexagonal MgZn 2 -type in our HfFe 2 sample was refined. Both structures are ferromagnetic with Curie temperatures, which differ significantly (588 K for MgCu 2 and 427 K for MgZn 2 ). The corresponding values of hyperfine fields are H hf 13.8±0.1 T for MgCu 2 -type structure and H hf = 8.0±0.2 T for MgZn 2 -type structure. Calculations using LAPW-Wien 97 program package are in progress and preliminary results are in good agreement with experiment. The analysis includes qualitative explanation of the exchange interactions mechanism between magnetic dipole moment of the observed 181 Ta ion-probe and magnetic dipole moments of the nearest neighbours on the corresponding coordination polyhedra. All these results will be published recently. (author)

Tracing of border trap behavior by noise analysis in microelectronics

International Nuclear Information System (INIS)

Sharshar, K.A.A.; Shaalan, A.A.M.; Gomaa, E.I.

2008-01-01

The present state of art of this work is to study the electrical defects of the silicon- silicon dioxide interface created by gamma rays (Co 60 ) in submicron MOS devices used in telecommunication systems. We focus our investigation on a particular class of trapped charge located near the interface characterized as the border traps. The expected physical location and chemical structure of the traps were discussed. The low frequency 1/f noise measurement is used in the estimation of border trap densities before and after irradiation; the results are reported for n-MOS transistor exposed to doses (0.3, 0.5, 1 and 10 Mrad). The border trap population in the irradiated samples increased from 7.6*10 10 up to 1.03*10 11 eV -1 Cm -2

Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

International Nuclear Information System (INIS)

Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2017-01-01

Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

Nanosized Hydroxyapatite Precipitation on the Ti—30Ta—xHf Alloys.

Science.gov (United States)

Lee, Kang; Jang, Jae- In; Han-Cheol, Choe

2017-04-01

In this study, we prepared hydroxyapatite (HAp) layer on the alkali treated Ti–30Ta–xHf alloys using electrochemical deposition method. Ti–30Ta–xHf alloys was anodized in 5 M NaOH solution at 0.3 A for 10 min. Alkali treated Ti–30Ta–xHf surface formed by anodization step which acted as templates and anchorage for growth of the HAp during subsequent pulsed electrochemical deposition process at 85 °C. The phase and morphologies of deposited HAp layer were affected by the Hf contents of Ti–30Ta–xHf alloys. The nano-scale rod-like HAp layer was formed on untreated Ti–30Ta–xHf alloys with partially low crystallinity. In the case of alkali treated Ti–30Ta–xHf, nano-sized needle-like layers were transferred to nano-flake surface and denser morphology as Hf content increased.

HF-voltage testing of accelerating system functional model

International Nuclear Information System (INIS)

Gladkov, A.V.; Stepanov, V.B.

1989-01-01

Owing to ambiguity in interpreting the notion of the electron strength of the operating HF device in an acceleator a technique of measurements and result processing, based on statistical analysis of the data is suggested. Experimental testing on electric strength of structures with HF focusing was carried out using a bench in the form of a cylindrical vacuum container inside which a double H-resonator with HF quadrupole electrodes without surface modulation was installed. The dependences obtained permit to evaluate the bahaviour of the HF device from the viewpoint of electric strength and radiation hazard for the whole range of possible values of voltage on the basis of data on the frequency of breakdowns and radiation situation only in one experimental point. 12 refs.; 8 figs

Performance of an HF chain-reaction laser with high initiation efficiency

International Nuclear Information System (INIS)

Whittier, J.S.; Kerber, R.L.

1974-01-01

Output-pulse observations are presented for a transverse electrically initiated, helium-diluted HF laser pumped by the H 2 + F 2 chain reaction. Performance of this laser is studied over a wide range of the gas composition and for initial pressures between 0.1 and 0.5 atm. The gas mixture was stabilized by premixing O 2 , F 2 , and He and flowing this mixture into a cold trap (84 0 K) before mixing with H 2 . Optimum conversion of electrical-initiation energy into laser energy was found for a 240-torr mixture with a mole ratio 1 F 2 :0.23 H 2 :0.08 O 2 :12 He which, when initiated with a 25-kV, 333-pF discharge, gave a pulse energy of 0.150 J. This corresponds to a ratio of laser output energy to electrical input energy of 144 percent. After unnecessary losses are taken into account, this ratio becomes 160 percent. (U.S.)

Insights into the mechanisms on chemical reactions: reaction paths for chemical reactions

International Nuclear Information System (INIS)

Dunning, T.H. Jr.; Rosen, E.; Eades, R.A.

1987-01-01

We report reaction paths for two prototypical chemical reactions: Li + HF, an electron transfer reaction, and OH + H 2 , an abstraction reaction. In the first reaction we consider the connection between the energetic terms in the reaction path Hamiltonian and the electronic changes which occur upon reaction. In the second reaction we consider the treatment of vibrational effects in chemical reactions in the reaction path formalism. 30 refs., 9 figs

Sequential sputtered Co-HfO{sub 2} granular films

Energy Technology Data Exchange (ETDEWEB)

Chadha, M.; Ng, V.

2017-03-15

A systematic study of magnetic, magneto-transport and micro-structural properties of Co-HfO{sub 2} granular films fabricated by sequential sputtering is presented. We demonstrate reduction in ferromagnetic-oxide formation by using HfO{sub 2} as the insulting matrix. Microstructure evaluation of the films showed that the film structure consisted of discrete hcp-Co grains embedded in HfO{sub 2} matrix. Films with varying compositions were prepared and their macroscopic properties were studied. We correlate the variation in these properties to the variation in film microstructure. Our study shows that Co-HfO{sub 2} films with reduced cobalt oxide and varying properties can be prepared using sequential sputtering technique. - Highlights: • Co-HfO{sub 2} granular films were prepared using sequential sputtering. • A reduction in ferromagnetic-oxide formation is observed. • Co-HfO{sub 2} films display superparamagnetism and tunnelling magneto-resistance. • Varying macroscopic properties were achieved by changing film composition. • Applications can be found in moderate MR sensors and high –frequency RF devices.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

HF Interference, Procedures and Tools (Interferences HF, procedures et outils)

Science.gov (United States)

2007-06-01

the actual ambient noise floor situation. Besides these HF radio links, special units such as crisis reaction forces are using low power radios for...the origin point on the ground. For ease of arithmetic and typography , the latter option is preferable. The dipole-modelled PLT is located at x = H1

Subduction Contributions in the Trans-Mexican Volcanic Belt: Implications from Lava Chemistry and Hf-Nd-Pb Isotopes

Science.gov (United States)

Cai, Y.; Goldstein, S. L.; Langmuir, C. H.; Gómez-Tuena, A.; Lagatta, A.; Straub, S. M.; Martín Del Pozzo, A.

2007-05-01

Despite thick continental crust, near primitive lavas erupt throughout the Trans-Mexican Volcanic Belt (TMVB). In order to distinguish and better constrain subduction contributions and effects of crustal contamination, we analyzed samples representing subducting sediments from DSDP Site 487, and Quaternary lavas from stratovolcanoes and cinder cones, including alkaline "high-Nb" lavas from the Sierra Chichinautzin Volcanic Field (SCVF) showing negligible subduction signature in its trace element chemistry and representing melts of the mantle wedge. Our primary observations and implications are: (1) The high-Nb SCVF `intraplate' lavas define a linear trend along the "Nd-Hf mantle-crust array", defining the composition of the mantle wedge. (2) Popocatepetl and Nevado de Toluca stratovolcanoes show the highest Nd and Hf isotope ratios, higher than the `intraplate' lavas, indicating their sources are more "depleted mantle-like" than the regional mantle wedge. (3) The Popo and Toluca chemical and isotopic trends sharply contrast with Pico de Orizaba, which shows classic indications of crustal contamination (e.g. high 207Pb/204Pb, low Nd-Hf isotope ratios), consistent with contamination by local Precambrian crust. (4) Higher Nd-Hf isotopes in Popo and Toluca lavas also correlate with lower Pb isotope ratios, and lower Lu/Hf and Zr/Hf. Together, these data indicate contributions from subducted Pacific oceanic crust and hydrothermal sediment. (5) Popo and Toluca are also enriched in Th/LREE compared with `intraplate' lavas, reflecting subducted sediment contributions. (6) Nd-Hf isotope ratios of hydrothermal sediment from DSDP Site 487 lie on the "seawater array", with high Hf isotope ratios compared to the "mantle-crust array". Popo and Toluca Nd-Hf isotopes display a shallower slope than the "intraplate lava Nd-Hf array", reflecting contributions from hydrothermal sediment. Popocatepetl and Toluca lavas therefore avoid substantial crustal contamination of mantle wedge

Trajectory calculation of a trapped particle in electro-dynamic balance for study of chemical reaction of aerosol particles

International Nuclear Information System (INIS)

Okuma, Miho; Itou, Takahiro; Harano, Azuchi; Takarada, Takayuki; James, Davis E

2013-01-01

Electrodynamic balance (EDB) is a powerful tool for investigating the chemical reactions between a fine particle and gaseous species. But the EDB device alone is inadequate to match the rapid weight change of a fine particle caused by chemical reactions, because it takes a few seconds to set a fine particle at null point. The particle trajectory calculation for the trapped particle added to the EDB is thus a very useful tool for the measurement of the transient response of a particle weight change with no need to adjust the applied DC voltage to set the null point. The purpose of this study is to develop the trajectory calculation method to track the particle oscillation pattern in the EDB and examine the possibility for kinetic studies on the reaction of a single aerosol particle with gaseous species. The results demonstrated the feasibility of applying particle trajectory calculation to realize the research purpose.

HF band filter bank multi-carrier spread spectrum

Energy Technology Data Exchange (ETDEWEB)

Laraway, Stephen Andrew; Moradi, Hussein; Farhang-Boroujeny, Behrouz

2015-10-01

Abstract—This paper describes modifications to the filter bank multicarrier spread spectrum (FB-MC-SS) system, that was presented in [1] and [2], to enable transmission of this waveform in the HF skywave channel. FB-MC-SS is well suited for the HF channel because it performs well in channels with frequency selective fading and interference. This paper describes new algorithms for packet detection, timing recovery and equalization that are suitable for the HF channel. Also, an algorithm for optimizing the peak to average power ratio (PAPR) of the FBMC- SS waveform is presented. Application of this algorithm results in a waveform with low PAPR. Simulation results using a wide band HF channel model demonstrate the robustness of this system over a wide range of delay and Doppler spreads.

Perturbed-angular-correlation study of the electric-field gradient in 181Hf-doped and implanted indium sesquioxide

International Nuclear Information System (INIS)

Renteria, M.; Requejo, F.G.; Bibiloni, A.G.; Pasquevich, A.F.; Shitu, J.; Freitag, K.

1997-01-01

We studied the hyperfine interactions of 181 Ta in In 2 O 3 by means of perturbed-angular-correlation (PAC) measurements. We prepared thin films of indium sesquioxide with different degrees of initial amorphism and implanted them with 181 Hf. Chemically prepared indium-sesquioxide powder samples were also made starting from neutron-irradiated HfCl 4 , which provides the 181 Hf PAC probes. PAC experiments were performed on each sample at room temperature, after each step of annealing programs at increasing temperatures up to the full crystallization of the samples. The results indicate that the PAC probe occupies preferentially the axially symmetric cation site. Point-charge-model calculations were performed. The calculated asymmetry parameters η were compared with those obtained in 181 Hf PAC experiments performed also on other binary oxides, showing that the symmetry of the electric-field-gradient (EFG) tensor at 181 Ta cation sites in binary oxides is mainly determined by the nearest-neighbor oxygen-ion distribution around the probe. Comparisons of the experimental results in bixbyites obtained for both PAC probes, 111 Cd and 181 Ta, show that the local EFG in bixbyites, are strongly dependent on the geometry of the sites and the electronic configuration of the probes. copyright 1997 The American Physical Society

Nuclear quadrupole interactions in ferroelectric compounds of HF181

International Nuclear Information System (INIS)

Kunzler, J.V.

1971-01-01

Measurements of nuclear quadrupole interaction constants in perovkite-type compounds of PbHfO 3 , SnhfO 3 , CaHfO 3 e SrHfO 3 have been performed using the perturbed angular correlation technique. A range of fundamental frequencies from 150 to 550 Megaradians persecond was determined. The variation of quadrupole constants has been discussed through the molecular orbital theory

Lu-Hf and Sm-Nd garnet geochronology

DEFF Research Database (Denmark)

Smit, Matthijs Arjen; Scherer, Erik E.; Mezger, Klaus

2013-01-01

To investigate the systematics of the 176Lu–176Hf and 147Sm–143Nd garnet chronometers, we performed REE and isotope analyses on garnet crystals of different size (0.55–3.1 mm radius) from a single granulite specimen (Archean Pikwitonei Granulite Domain, Manitoba, Canada). The Lu–Hf dates are simi...

A theoretical study of the molecular structures and vibrational spectra of the N 2O⋯(HF) 2

Science.gov (United States)

de Lima, Nathália B.; Ramos, Mozart N.

2012-01-01

Theoretical calculations using both the MP2 and B3LYP levels of calculation with a 6-311++G(3df,3pd) basis set have been performed to determine stable structures and molecular properties for the H-bonded complexes involving nitrous oxide (N 2O) and two HF molecules. Five complex have been characterized as minima since no imaginary frequency was found. Three complex are predicted to be relatively more stable with binding energies varying from 14 kJ mol -1 to 23 kJ mol -1 after BSSE and ZPE corrections. Our calculations have revealed that the second complexation with HF preferably occurs with the first complexed HF molecule, i.e., forming the X⋯H sbnd F⋯H sbnd F skeleton with X = O or N instead the F sbnd H⋯N sbnd N sbnd O⋯H sbnd F one. As expected, the H sbnd F chemical bonds are increased after complexation due to intermolecular charge transfer from "n" isolated pair of the X atom (X = N, O or F) to the σ ∗ anti-bonding orbital of HF. For the strongly bounded complex, the doubly complexed HF molecule acts as a bridge between the two end molecules while transferring electrons from N 2O to HF. Both possess the same amount of residual charge but with opposite signs. The H sbnd F stretching frequency of the monoprotic acid is shifted downward after complexation whereas its IR intensity is much enhanced. This increase has been adequately interpreted in terms of equilibrium hydrogen charge and charge-flux associated to the H sbnd F stretching using the CCFOM model for infrared intensities. This procedure has also allowed to analyze the new vibrational modes arising upon H-bond formation, especially those associated with the out-of-plane and in-plane HF bending modes, which are pure rotations in the HF isolated molecule.

Acid–Base Bifunctional Hf Nanohybrids Enable High Selectivity in the Catalytic Conversion of Ethyl Levulinate to γ-Valerolactone

Directory of Open Access Journals (Sweden)

Weibo Wu

2018-06-01

Full Text Available The catalytic upgrading of bio-based platform molecules is a promising approach for biomass valorization. However, most solid catalysts are not thermally or chemically stable, and are difficult to prepare. In this study, a stable organic phosphonate–hafnium solid catalyst (PPOA–Hf was synthesized, and acid–base bifunctional sites were found to play a cooperative role in the cascade transfer hydrogenation and cyclization of ethyl levulinate (EL to γ-valerolactone (GVL. Under relatively mild reaction conditions of 160 °C for 6 h, EL was completely converted to GVL with a good yield of 85%. The apparent activation energy was calculated to be 53 kJ/mol, which was lower than other solid catalysts for the same reaction. In addition, the PPOA-Hf solid catalyst did not significantly decrease its activity after five recycles, and no evident leaching of Hf was observed, indicating its high stability and potential practical application.

MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

International Nuclear Information System (INIS)

Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

2006-01-01

We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

Hydrogen and deuterium trapping in iron

Energy Technology Data Exchange (ETDEWEB)

Johnson, H H; Lin, R W

1981-02-01

The research described is directed at present almost exclusively to hydrogen transport, including both chemical and physical trapping, in iron and iron-base alloys. Some attention is directed to isotope effects. Efforts are made to clarify and understand hydrogen-related phenomena which are believed to be of direct importance to practical performance.

Chemical insight into origin of forming-free resistive random-access memory devices

KAUST Repository

Wu, X.

2011-09-29

We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics

OpenAIRE

Choi, Sungho; An, Youngseo; Lee, Changmin; Song, Jeongkeun; Nguyen, Manh-Cuong; Byun, Young-Chul; Choi, Rino; McIntyre, Paul C.; Kim, Hyoungsub

2017-01-01

We studied the impact of H2 pressure during post-metallization annealing on the chemical composition of a HfO2/Al2O3 gate stack on a HCl wet-cleaned In0.53Ga0.47As substrate by comparing the forming gas annealing (at atmospheric pressure with a H2 partial pressure of 0.04?bar) and H2 high-pressure annealing (H2-HPA at 30?bar) methods. In addition, the effectiveness of H2-HPA on the passivation of the interface states was compared for both p- and n-type In0.53Ga0.47As substrates. The decomposi...

Detection of Chemical/Biological Agents and Stimulants using Quadrupole Ion Trap Mass Spectrometry

International Nuclear Information System (INIS)

Harmon, S.H.; Hart, K.J.; Vass, A.A.; Wise, M.B.; Wolf, D.A.

1999-01-01

Detection of Chemical/Biological Agents and Simulants A new detector for chemical and biological agents is being developed for the U. S. Army under the Chemical and Biological Mass Spectrometer Block II program. The CBMS Block II is designed to optimize detection of both chemical and biological agents through the use of direct sampling inlets[I], a multi- ported sampling valve and a turbo- based vacuum system to support chemical ionization. Unit mass resolution using air as the buffer gas[2] has been obtained using this design. Software to control the instrument and to analyze the data generated from the instrument has also been newly developed. Detection of chemical agents can be accomplished. using the CBMS Block II design via one of two inlets - a l/ I 6'' stainless steel sample line -Chemical Warfare Air (CW Air) or a ground probe with enclosed capillary currently in use by the US Army - CW Ground. The Block II design is capable of both electron ionization and chemical ionization. Ethanol is being used as the Cl reagent based on a study indicating best performance for the Biological Warfare (BW) detection task (31). Data showing good signal to noise for 500 pg of methyl salicylate injected into the CW Air inlet, 50 ng of dimethylmethylphosphonate exposed to the CW Ground probe and 5 ng of methyl stearate analyzed using the pyrolyzer inlet were presented. Biological agents are sampled using a ''bio-concentrator'' unit that is designed to concentrate particles in the low micron range. Particles are collected in the bottom of a quartz pyrolyzer tube. An automated injector is being developed to deliver approximately 2 pL of a methylating reagent, tetramethylamonium- hydroxide to 'the collected particles. Pyrolysis occurs by rapid heating to ca. 55OOC. Biological agents are then characterized by their fatty acid methyl ester profiles and by other biomarkers. A library of ETOH- Cl/ pyrolysis MS data of microorganisms used for a recently published study[3] has been

Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mogoda, A.S., E-mail: awad_mogoda@hotmail.com [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt); Ahmad, Y.H.; Badawy, W.A. [Department of Chemistry, Faculty of Science, Cairo University, Giza (Egypt)

2011-04-15

Research highlights: {yields} Stain etching of p-Si in aqueous HF solutions containing HNO{sub 3} or KMnO{sub 4} was investigated. {yields} The electrical conductivity of the etched Si surfaces was measured using impedance technique. {yields} Scanning electron microscope and energy disperse X-ray were used to analyze the etched surfaces. {yields} Etching in aqueous HF solution containing HNO{sub 3} led to formation of a porous silicon layer. {yields} The formation of the porous silicon layer in HF/KMnO{sub 4} was accompanied by deposition of K{sub 2}SiF{sub 6} on the pores surfaces. - Abstract: Stain etching of p-type silicon in hydrofluoric acid solutions containing nitric acid or potassium permanganate as an oxidizing agent has been examined. The effects of etching time, oxidizing agent and HF concentrations on the electrochemical behavior of etched silicon surfaces have been investigated by electrochemical impedance spectroscopy (EIS). An electrical equivalent circuit was used for fitting the impedance data. The morphology and the chemical composition of the etched Si surface were studied using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) techniques, respectively. A porous silicon layer was formed on Si etched in HF solutions containing HNO{sub 3}, while etching in HF solutions containing KMnO{sub 4} led to the formation of a porous layer and simultaneous deposition of K{sub 2}SiF{sub 6} inside the pores. The thickness of K{sub 2}SiF{sub 6} layer increases with increasing the KMnO{sub 4} concentration and decreases as the concentration of HF increases.

Solid phase crystallisation of HfO2 thin films

International Nuclear Information System (INIS)

Modreanu, M.; Sancho-Parramon, J.; O'Connell, D.; Justice, J.; Durand, O.; Servet, B.

2005-01-01

In this paper, we report on the solid phase crystallisation of carbon-free HfO 2 thin films deposited by plasma ion assisted deposition (PIAD). After deposition, the HfO 2 films were annealed in N 2 ambient for 3 h at 350, 550 and 750 deg. C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) were used for the physical characterisation of as-deposited and annealed HfO 2 . XRD has revealed that the as-deposited HfO 2 film is in an amorphous-like state with only traces of crystalline phase and that the annealed films are in a highly crystalline state. These results are in good agreement with the SE results showing an increase of refractive index by increasing the annealing temperature. XRR results show a significant density gradient over the as-deposited film thickness, which is characteristic of the PIAD method. The AFM measurements show that the HfO 2 layers have a smooth surface even after annealing at 750 deg. C. The present study demonstrates that the solid phase crystallisation of HfO 2 PIAD thin films starts at a temperature as low as 550 deg. C

Mechanical alloying of Hf and Fe powders

International Nuclear Information System (INIS)

Mendoza Zelis, L.; Crespo, E.; Creus, M.; Damonte, L.C.; Sanchez, F.H.; Punte, G.

1994-01-01

Pure crystalline Hf and Fe powders were mixed and milled under an argon atmosphere. The evolution of the system with milling time was followed with Moessbauer effect spectroscopy and X-ray diffraction. The results indicate that in the first stages an amorphous Fe-rich alloy was gradually formed together with a solid solution of Hf in Fe beyond the solubility limit. (orig.)

Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

International Nuclear Information System (INIS)

Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

2013-01-01

HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

Application of fixed bed trapping technology for the removal of low concentration UF6 from plant gaseous effluent streams

International Nuclear Information System (INIS)

Russell, R.G.

1987-01-01

For the trapping of UF 6 in nitrogen, NaF > Al 2 O 3 > CaSO 4 . UF 6 inlet concentration has little effect on loading of alumina. Velocity shows an effect on UF 6 loading on alumina, with higher loading at low velocity. There is no significant difference in UF 6 loading between alumina 201A and 202HF. UF 6 outlet concentrations prior to breakthrough were measured to be as low as 2 O 3 until breakthrough (6.6% vs 5.3%), after which NaF experiences more loading (7.5% vs 11.5% at 1 ppM in the outlet). Higher trap loadings at lower pressures for both NaF and Al 2 O 3 . Al 2 O 3 was more efficient than NaF at higher velocities

HF Radar observations of the Dardanelles outflow current in North Eastern Aegean using validated WERA HF radar data

Directory of Open Access Journals (Sweden)

Z. KOKKINI

2014-12-01

Full Text Available A two-site WERA HF radar station was installed in November 2009 at the eastern coast of Lemnos Island in North Aegean Sea, aiming to monitor the surface inflow of Black Sea waters exiting from the Dardanelles Strait, as well as to constitute a coastal management tool for incidents of oil-pollution or save-and-rescue operations. Strong interference by foreign transmissions is a source of noise deteriorating the quality of the backscattered signal, thus significantly reducing the HF radar’s effective data return rate. In order to ameliorate this problem, further quality-control and data gap interpolating procedures have been developed and applied, to be used in addition to the procedures incorporated and used by the manufacturer’s signal processing software. The second-level processing involves traditional despiking in the temporal domain, preceding Empirical Orthogonal Function analysis. The latter is used not only to filter high-frequency noise but also to fill data gaps in time and space. The data reconstruction procedure has been assessed via comparison of (a HF radial with CODE-type drifter radial velocities as well as (b HF-derived virtual drifter tracks with actual drifter tracks. The main circulation features and their variability, as revealed by the reconstructed fields, are presented.

HF-laser program

International Nuclear Information System (INIS)

Anon.

1978-01-01

The HF laser is an attractive candidate driver for a large-system ICF scientific demonstration facility, for an ICF experimental power reactor and for a commercial laser--fusion power reactor. Previous accomplishments of the program have included demonstrations of high efficiency and high energy capability, efficient energy extraction from HF amplifiers, good beam quality and focusability, and short-pulse generation and amplification. In the reporting period, beam quality has been determined to be near-diffraction limited for a short pulsewidth (6 ns to 25 ns) oscillator-amplifier chain, suppression of amplified spontaneous emission has been demonstrated on an individual spectral line, high-pressure characteristics have been determined for the Phoenix I amplifier, and detailed comparisions between the kinetic code and experiments have been made. Details of two major upcoming experiments are also included. The first is energy extraction and beam quality measurements on the Phoenix I amplifier operating under saturated output power conditions. The second experiment, using a newly designed amplifier (Phoenix II), is designed to demonstrate the concept of angular-multiplexing: a pulse width-compression scheme

Anomalous Hall effect assisted by interfacial chemical reaction in perpendicular Co/Pt multilayers

Science.gov (United States)

Liu, Qian; Jiang, Shaolong; Teng, Jiao

2018-05-01

To uncover the underlying mechanism of Mg effect on the improved anomalous Hall effect (AHE) of perpendicular [Pt/Co]3/Mg/HfO2 multilayers, the X-ray photoelectron spectroscopy analysis has been carried out. It is found that Mg interlayer at the Co/HfO2 interface could prevent the Co oxidation to some extent via interfacial chemical reaction. As a result, A large anomalous Hall resistivity (ρAH) is obtained in perpendicular [Pt/Co]3/Mg/HfO2 multilayers, with a maximum ρAH of 3.02 μΩ cm, which is 59% larger than that in Co/Pt multilayers without Mg insertion. This effective modification of the AHE based on interfacial chemical reaction provides a promising pathway for spintronic applications.

Hole traps in n-GaN detected by minority carrier transient spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Tokuda, Yutaka; Yamada, Yujiro; Shibata, Tatsunari; Yamaguchi, Shintaro [Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Yakusa, 470-0392 Toyota (Japan); Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu [Toyota Central R and D Laboratories, Inc., Nagakute, 480-1192 Aichi (Japan)

2011-07-15

Minority carrier transient spectroscopy (MCTS) has been applied for the detection of hole traps in n-GaN using Schottky diodes. MCTS using 355 nm light emitting diodes is performed under isothermal conditions in the temperature range 280 to 330 K for n-GaN grown by metalorganic chemical vapor deposition on sapphire. Isothermal MCTS spectra reveal the E{sub v} + 0.86 eV hole trap with the trap concentration of 1.1x10{sup 16} cm{sup -3}. The E{sub v} + 0.86 eV hole trap has the higher concentration as compared to electron traps observed by deep level transient spectroscopy. Thus, the isothermal MCTS around room temperature provides a convenient way to evaluate the dominant trap in n-GaN. It is suggested that the E{sub v} + 0.86 eV hole trap is associated with the V{sub Ga}-related defect or carbon-related defect. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Band alignment of HfO{sub 2}/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy: Effect of CHF{sub 3} treatment

Energy Technology Data Exchange (ETDEWEB)

Liu, Xinke; He, Jiazhu; Tang, Dan; Jia, Fang; Lu, Youming, E-mail: ymlu@szu.edu.cn; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun [College of Materials Science and Engineering, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060 (China); Liu, Qiang; Wen, Jiao; Yu, Wenjie, E-mail: casan@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS,865 Chang Ning Road, Shanghai 200050 (China); Pan, Jisheng [Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602 (Singapore); He, Zhubing [Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055 (China); Ang, Kah-Wee [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583 (Singapore)

2015-09-07

The energy band alignment between HfO{sub 2}/multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The HfO{sub 2} was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 1.98 eV and a conduction band offset (CBO) of 2.72 eV were obtained for the HfO{sub 2}/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the HfO{sub 2}/ML-MoS{sub 2} interface were found to be 2.47 eV and 2.23 eV, respectively. The band alignment difference is believed to be dominated by the down-shift in the core level of Hf 4d and up-shift in the core level of Mo 3d, or the interface dipoles, which caused by the interfacial layer in rich of F.

Development of Cu-Hf-Al ternary systems and tungsten wire/particle reinforced Cu48Hf43Al9 bulk metallic glass composites for strengthening

International Nuclear Information System (INIS)

Park, Joyoung; An, Jihye; Choi-Yim, Haein

2010-01-01

Stable bulk glass forming alloys can be developed over a wide range of compositions in Cu-Hf-Al ternary systems starting from the Cu 49 Hf 42 Al 9 bulk metallic glass. Ternary Cu-Hf-Al alloys can be cast directly from the melt into copper molds to form fully amorphous strips with thicknesses of 1 to 6 mm. The maximum critical diameter of the new Cu-Hf-Al ternary alloy was 6 mm. X-ray diffraction patterns were used to confirm the amorphous nature of the ternary Cu-Hf-Al alloys. To increase the toughness of these metallic glasses, we reinforced the Cu 48 Hf 43 Al 9 bulk metallic glass-forming liquid with a 50% volume fraction of tungsten particles and an 80% volume fraction of tungsten wires with diameters of 242.4 μm. Composites with a critical diameter of 7 mm and length 70 mm were synthesized. The structure of the composites was confirmed by using X-ray diffraction (XRD), and the scanning electron microscopy (SEM). The mechanical properties of the composites were studied in compression tests. The thermal stability and the crystallization processes of the Cu-Hf-Al alloys and composites were investigated by using differential scanning calorimetry (DSC). Values of the glass transition temperature (T g ), the crystallization temperature (T x ), and the supercooled liquid region (ΔT = T x - T g ) are given in this paper.

Do Hf isotopes in magmatic zircons represent those of their host rocks?

Science.gov (United States)

Wang, Di; Wang, Xiao-Lei; Cai, Yue; Goldstein, Steven L.; Yang, Tao

2018-04-01

Lu-Hf isotopic system in zircon is a powerful and widely used geochemical tracer in studying petrogenesis of magmatic rocks and crustal evolution, assuming that zircon Hf isotopes can represent initial Hf isotopes of their parental whole rock. However, this assumption may not always be valid. Disequilibrium partial melting of continental crust would preferentially melt out non-zircon minerals with high time-integrated Lu/Hf ratios and generate partial melts with Hf isotope compositions that are more radiogenic than those of its magma source. Dissolution experiments (with hotplate, bomb and sintering procedures) of zircon-bearing samples demonstrate this disequilibrium effect where partial dissolution yielded variable and more radiogenic Hf isotope compositions than fully dissolved samples. A case study from the Neoproterozoic Jiuling batholith in southern China shows that about half of the investigated samples show decoupled Hf isotopes between zircons and the bulk rocks. This decoupling could reflect complex and prolonged magmatic processes, such as crustal assimilation, magma mixing, and disequilibrium melting, which are consistent with the wide temperature spectrum from ∼630 °C to ∼900 °C by Ti-in-zircon thermometer. We suggest that magmatic zircons may only record the Hf isotopic composition of their surrounding melt during crystallization and it is uncertain whether their Hf isotopic compositions can represent the primary Hf isotopic compositions of the bulk magmas. In this regard, using zircon Hf isotopic compositions to trace crustal evolution may be biased since most of these could be originally from disequilibrium partial melts.

Chemical and nuclear properties of Rutherfordium (Element 104)

International Nuclear Information System (INIS)

Kacher, C.D.

1995-01-01

The chemical-properties of rutherfordium (Rf) and its group 4 homologs were studied by sorption on glass support surfaces coated with cobalt(II)ferrocyanide and by solvent extraction with tributylphosphate (TBP) and triisooctylamine (TIOA). The surface studies showed that the hydrolysis trend in the group 4 elements and the pseudogroup 4 element, lb, decreases in the order Rf>Zr∼Hf>Th. This trend was attributed to relativistic effects which predicted that Rf would be more prone to having a coordination number of 6 than 8 in most aqueous solutions due to a destabilization of the 6d 5/2 shell and a stabilization of the 7p l/2 shell. This hydrolysis trend was confirmed in the TBP/HBr solvent extraction studies which showed that the extraction trend decreased in the order Zr>Hf>Rf?Ti for HBr, showing that Rf and Ti did not extract as well because they hydrolyzed more easily than Zr and Hf. The TIOA/HF solvent extraction studies showed that the extraction trend for the group 4 elements decreased in the order Ti>Zr∼Hf>Rf, in inverse order from the trend of ionic radii Rf>Zr∼Hf>Ti. An attempt was made to produce 263 Rf (a) via the 248 Cm( 22 Ne, α3n) reaction employing thenoyltrifluoroacetone (TTA) solvent extraction chemistry and (b) via the 249 Bk( 18 O,4n) reaction employing the Automated Rapid Chemistry Apparatus (ARCA). In the TTA studies, 16 fissions were observed but were all attributed to 256 Fm. No alpha events were observed in the Rf chemical fraction. A 0.2 nb upper limit production cross section for the 248 Cm( 22 Ne, α3n) 263 Rf reaction was calculated assuming the 500-sec half-life reported previously by Czerwinski et al. [CZE92A

Effects of HfO{sub 2}/Co interface and Co/HfO{sub 2} interface on anomalous Hall behavior in perpendicular Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Jiang, Shao-Long [Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Yang, Guang [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Teng, Jiao, E-mail: tengjiao@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Guo, Qi-Xun; Liu, Yi-Wei; Li, Xu-Jing [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Yu, Guang-Hua, E-mail: ghyu@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

2017-07-01

Highlights: • Anomalous Hall effect in perpendicular Co/Pt multilayers is studied. • Thermally stable AHE feature is obtained in [Pt/Co]{sub 3}/HfO{sub 2}/Pt multilayers. • Good thermal stability is due to enhanced intrinsic and side-jump contributions. - Abstract: Effects of the HfO{sub 2}/Co interface and the Co/HfO{sub 2} interface on thermal stability of anomalous Hall effect (AHE) in perpendicular Co/Pt multilayers have been studied. It is observed that thermally stable AHE behavior cannot be obtained in perpendicular Co/Pt multilayers with the HfO{sub 2}/Co interface, mainly due to Co-Pt interdiffusion during annealing. In contrast, thermally stable AHE feature is observed in perpendicular Co/Pt multilayers with the Co/HfO{sub 2} interface despite Co-Pt interdiffusion, which is owing to the enhancement of the side jump and intrinsic contributions to the AHE through interfacial modification after annealing.

A novel process for preparation of titanium dioxide from Ti-bearing electric furnace slag: NH4HF2-HF leaching and hydrolyzing process.

Science.gov (United States)

Zheng, Fuqiang; Guo, Yufeng; Qiu, Guanzhou; Chen, Feng; Wang, Shuai; Sui, Yulei; Jiang, Tao; Yang, Lingzhi

2018-02-15

A novel process to prepare titanium dioxide from Ti-bearing electric furnace slag by NH 4 HF 2 -HF leaching and hydrolyzing process has been developed. In this present study, the effects of [NH 4 + ]/[F] mXolar ratio, leaching temperature, [F] concentration, liquid/solid mass ratio, leaching time on the Ti extraction, and the phase transformations have been investigated to reveal the leaching mechanism of Ti-bearing electric furnace slag in NH 4 HF 2 -HF solution. In the NH 4 HF 2 -HF leaching process, the MgTi 2 O 5 and Al 2 TiO 5 are converted to TiF 6 2- and Mg-Al-bearing precipitate. Ti extraction rate reached 98.84% under the optimal conditions. In addition, 98.25% iron ions can be removed in the presence of NaCl prior to hydrolysis process. The effects of pH and temperature on the selective hydrolysis of TiF 6 2- during hydrolysis process were also studied. In the hydrolysis process, the TiF 6 2- is converted to (NH 4 ) 2 TiOF 4 . By calcination, high grade TiO 2 powder with its purity of 99.88% was obtained, using which the products, well crystallized anatase and rutile, were obtained through roasting at 800°C and 1000°C, respectively. Copyright © 2017 Elsevier B.V. All rights reserved.

Lifetime of the first excited 2{sup +} state in {sup 172}Hf and {sup 174}Hf

Energy Technology Data Exchange (ETDEWEB)

Gerst, Rosa-Belle; Stegemann, Simon; Jolie, Jan; Regis, Jean-Marc; Rudigier, Matthias; Saed-Samii, Nima; Zell, Karl Oskar [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Koeln (Germany)

2014-07-01

Using the {sup 170}Yb(α,2n) and {sup 172}Yb(α,2n) reactions the lifetimes of the first excited 2{sup +} state in {sup 172}Hf and {sup 174}Hf have been measured in fast-timing experiments using the Cologne Orange-Spectrometer and 6 LaBr{sub 3}(Ce)-Detectors. The lifetimes were obtained analyzing e{sup -}-γ-coincidence time-spectra with the slope method. The new and more precise lifetimes correct existing, outdated lifetimes in nuclear databases. Additionally, the systematics of the B(E2,2{sub 1}{sup +}→0{sub 1}{sup +}) is studied.

Draft revision of human factors guideline HF-010

International Nuclear Information System (INIS)

Lee, Hyun Chul; Lee, Yong Hee; Oh, In Seok; Lee, Jung Woon; Cha, Woo Chang; Lee, Dhong Ha

2003-05-01

The Application of Human Factors to the design of Man-Machine Interfaces System(MMIS) in the nuclear power plant is essential to the safety and productivity of the nuclear power plants, human factors standards and guidelines as well as human factors analysis methods and experiments are weightily used to the design application. A Korean engineering company has developed a human factors engineering guideline, so-call HF-010, and has used it for human factors design, however the revision of HF-010 is necessary owing to lack of the contents related to the advanced MMI(Man-Machine Interfaces). As the results of the reviews of HF-010, it is found out that the revision of Section 9. Computer Displays of HF-010 is urgent, thus the revision was drafted on the basis of integrated human factors design guidelines for VDT, human factors design guidelines for PMAS SPADES display, human factors design guidelines for PMAS alarm display, and human factors design guidelines for electronic displays developed by the surveillance and operation support project of KOICS. The draft revision of HF-010 Section 9 proposed in this report can be utilized for the human factors design of the advanced MMI, and the high practical usability of the draft can be kept up through the continuous revision according to the advancement of digital technology

New Method for Shallow and Deep Trap Distribution Analysis in Oil Impregnated Insulation Paper Based on the Space Charge Detrapping

Directory of Open Access Journals (Sweden)

Jian Hao

2018-01-01

Full Text Available Space charge has close relation with the trap distribution in the insulation material. The phenomenon of charges trapping and detrapping has attracted significant attention in recent years. Space charge and trap parameters are effective parameters for assessing the ageing condition of the insulation material qualitatively. In this paper, a new method for calculating trap distribution based on the double exponential fitting analysis of charge decay process and its application on characterizing the trap distribution of oil impregnated insulation paper was investigated. When compared with the common first order exponential fitting analysis method, the improved dual-level trap method could obtain the energy level range and density of both shallow traps and deep traps, simultaneously. Space charge decay process analysis of the insulation paper immersed with new oil and aged oil shows that the improved trap distribution calculation method can distinguish the physical defects and chemical defects. The trap density shows an increasing trend with the oil ageing, especially for the deep traps mainly related to chemical defects. The greater the energy could be filled by the traps, the larger amount of charges could be trapped, especially under higher electric field strength. The deep trap energy level and trap density could be used to characterize ageing. When one evaluates the ageing condition of oil-paper insulation using trap distribution parameters, the influence of oil performance should not be ignored.

Luminescence and charge trapping in Cs.sub.2./sub.HfCl.sub.6./sub. single crystals: optical and magnetic resonance spectroscopy study

Czech Academy of Sciences Publication Activity Database

Král, Robert; Babin, Vladimir; Mihóková, Eva; Buryi, Maksym; Laguta, Valentyn; Nitsch, Karel; Nikl, Martin

2017-01-01

Roč. 121, č. 22 (2017), s. 12375-12382 ISSN 1932-7447 R&D Projects: GA MŠk LO1409; GA ČR GA17-09933S Institutional support: RVO:68378271 Keywords : Cs2HfCl6 * single crystal * luminescence * temperature dependence * EPR spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.536, year: 2016

Thermodynamic modeling of the Co–Hf system supported by key experiments and first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Lu, Xingxu [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Liu, Shuhong, E-mail: shhliu@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Sino-German Cooperation Group “Microstructure in Al alloys”, Central South University, Changsha, Hunan 410083 (China); Cheng, Kaiming; Tang, Ying [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Ou, Pengfei [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Nash, Philip [Thermal Processing Technology Center, Illinois Institute of Technology (IIT), 10 West 32nd Street, Chicago, IL 60616 (United States); Sundman, Bo [INSTN, CEA Saclay, 91191 Gif-Sur-Yvette Cedex (France); Du, Yong [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Sino-German Cooperation Group “Microstructure in Al alloys”, Central South University, Changsha, Hunan 410083 (China); Zheng, Feng [School of Materials Science and Engineering, Central South University, Changsha, Hunan 410083 (China)

2015-05-20

Highlights: • Heat contents of Co{sub 2}Hf and CoHf{sub 2} were measured by drop calorimetry. • Enthalpy of formation for Co{sub 23}Hf{sub 6} was computed via first-principles calculations. • Co–Hf system was assessed by means of CALPHAD approach. • Order–disorder model is used to describe B2 (CoHf) and A2 (βHf). • Glass forming range of the Co–Hf amorphous alloys was predicted. - Abstract: Phase equilibria and thermodynamic properties of the Co–Hf system were investigated via calorimetric measurements, first-principles calculations and thermodynamic modeling. Heat contents of Co{sub 2}Hf and CoHf{sub 2} were measured by drop calorimetry from 300 to 1200 °C. The enthalpy of formation for Co{sub 23}Hf{sub 6} at 0 K was computed via first-principles calculations. Based on the experimental measurements and first-principles calculations from the present work and the literature, the Co–Hf system was assessed by means of CALPHAD (CALculation of PHAse Diagram) approach. The excess Gibbs energy of solution phases was modeled with Redlich–Kister polynomial. Sublattice models were employed to describe the homogeneity ranges of Co{sub 2}Hf, CoHf and CoHf{sub 2}. The order–disorder transition between B2 (CoHf) and A2 (βHf) phases was taken into account in the current optimization. Using the optimized parameters, glass forming range (GFR) of the Co–Hf amorphous alloys was predicted to be 15–75 at.% Hf, which is in satisfactory agreement with the experimental observation.

Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

Science.gov (United States)

Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

2018-01-01

The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

Nuclear quadrupole interactions in ferroelectric compounds of HF/sup 181/

Energy Technology Data Exchange (ETDEWEB)

Kunzler, J V

1971-01-01

Measurements of nuclear quadrupole interaction constants in perovkite-type compounds of PbHfO/sub 3/, SnhfO/sub 3/, CaHfO/sub 3/ e SrHfO/sub 3/ have been performed using the perturbed angular correlation technique. A range of fundamental frequencies from 150 to 550 Megaradians per second was determined. The variation of quadrupole constants has been discussed through the molecular orbital theory.

Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

International Nuclear Information System (INIS)

Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

2012-01-01

Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

Preliminary results from the Arecibo Heating Experiment (HEX): HF to GNSS

Science.gov (United States)

Jackson-Booth, N.; Penney, R.; Bernhardt, P. A.; Martin, P. L.; Buckland, R.; Morton-Orr, T.; Nossa, E.; Buckland, R.

2017-12-01

The ionosphere is subject to many solar and terrestrial influences that can generate disturbances, causing degradation to modern communication and navigational systems. Whilst the disturbances are normally caused by natural phenomena such as hurricanes, earthquakes and solar storms; they can also be generated by artificially modifying the ionosphere. Artificial Ionospheric Modification (AIM) attempts to alter a small region of the ionosphere in order to perturb the RF propagation environment. This can be achieved through injecting the ionosphere with aerosols, chemicals or radio signals. The effects of any such modification can be detected through the deployment of sensors, including ground based high-frequency (HF) sounders and dual-band Global Navigation Satellite System (GNSS) receivers. HF sounders allow measurements of the bottom-side of the ionosphere. GNSS receivers offer a convenient means of obtaining information about the ionosphere, including ionospheric disturbances through changes in the derived total electron content information. The Heating EXperiment (HEX), which took place in March and May 2017, was designed to further our understanding of the phenomena caused by artificially heating a small region of the ionosphere, using the Arecibo facility in Puerto Rico. This was achieved by utilizing a HF measurement experiment spread between Texas and Trinidad and the deployment of a small scale travelling ionospheric disturbance (TID) network near the heater. The TID network comprised three GNSS receivers along baselines of approximately 4 km, located 20 km north of the heater. This paper presents preliminary results from the HEX campaign, including evidence of heating-induced disturbances enhancing propagation between Virginia and Trinidad. The implications of generated irregularities on GNSS will also be discussed.

Large Magnetic Anisotropy in HfMnP

Science.gov (United States)

Parker, David; Lamichhane, Tej; Taufour, Valentin; Masters, Morgan; Thimmaiah, Srinivasa; Bud'Ko, Ser'gey; Canfield, Paul

We present a theoretical and experimental study of two little-studied manganese phosphide ferromagnets, HfMnP and ZrMnP, with Curie temperatures above room temperature. We find an anisotropy field in HfMnP approaching 10 T - larger than that of the permanent magnet workhorse NdFeB magnets. From theory we determine the source of this anisotropy. Our results show the potential of 3d-element-based magnetic materials for magnetic applications.

A comparative study of amorphous InGaZnO thin-film transistors with HfOxNy and HfO2 gate dielectrics

International Nuclear Information System (INIS)

Zou, Xiao; Tong, Xingsheng; Fang, Guojia; Yuan, Longyan; Zhao, Xingzhong

2010-01-01

High-κ HfO x N y and HfO 2 films are applied to amorphous InGaZnO (a-IGZO) devices as gate dielectric using radio-frequency reactive sputtering. The electrical characteristics and reliability of a-IGZO metal–insulator–semiconductor (MIS) capacitors and thin-film transistors (TFTs) are then investigated. Experimental results indicate that the nitrogen incorporation into HfO 2 can effectively improve the interface quality and enhance the reliability of the devices. Electrical properties with an interface-state density of 5.2 × 10 11 eV −1 cm −2 , capacitance equivalent thickness of 1.65 nm, gate leakage current density of 3.4 × 10 −5 A cm −2 at V fb +1 V, equivalent permittivity of 23.6 and hysteresis voltage of 110 mV are obtained for an Al/HfO x N y /a-IGZO MIS capacitor. Superior performance of HfO x N y /a-IGZO TFTs has also been achieved with a low threshold voltage of 0.33 V, a high saturation mobility of 12.1 cm 2 V −1 s −1 and a large on–off current ratio up to 7 × 10 7 (W/L = 500/20 µm) at 3 V

Ti-catalyzed HfSiO4 formation in HfTiO4 films on SiO2 studied by Z-contrast scanning electron microscopy

Directory of Open Access Journals (Sweden)

Elizabeth Ellen Hoppe

2013-08-01

Full Text Available Hafnon (HfSiO4 as it is initially formed in a partially demixed film of hafnium titanate (HfTiO4 on fused SiO2 is studied by atomic number (Z contrast high resolution scanning electron microscopy, x-ray diffraction, and Raman spectroscopy and microscopy. The results show exsoluted Ti is the catalyst for hafnon formation by a two-step reaction. Ti first reacts with SiO2 to produce a glassy Ti-silicate. Ti is then replaced by Hf in the silicate to produce HfSiO4. The results suggest this behavior is prototypical of other Ti-bearing ternary or higher order oxide films on SiO2 when film thermal instability involves Ti exsolution.

Solidification Rate Dependence of Microstructures and Transformation Behavior of Ti-Ni-Hf Alloys.

Science.gov (United States)

Kim, Dong-Jo; Kim, Yeon-Wook; Nam, Tae-Hyun

2018-09-01

The microstructures and transformation behavior of Ti-49Ni-20Hf, Ti-49.5Ni-20Hf and Ti-50.3Ni- 20Hf alloys, when prepared by conventional casting, were investigated and compared with the properties of the alloys prepared by melt spinning. The area fraction of (Ti,Hf)2Ni in Ti-Ni-Hf alloys decreased to 3.9% from 9.4% as Ni content rose to 50.3 at% from 49 at%. Several cracks were observed in the hot-rolled Ti-49Ni-20Hf alloy sheet but none were found in the Ti-50.3Ni-20Hf alloy sheet. The B2-B19' transformation start temperature (Ms) decreased to 476 K from 580 K as Ni content increased to 50.3 at% from 49 at%. All the as-spun ribbons were amorphous, and the activation energy for crystallization ranged from 167.8 kJ/mol to 182.7 kJ/mol based on Ni content. When annealing temperature ranged from 810 K to 873 K, crystalline Ti-Ni-Hf alloys without (Ti,Hf)2Ni particles were obtained. At annealing temperatures higher than 873 K, very fine (Ti,Hf)2Ni particles, less than 20 nm in size, were found embedded in a crystalline matrix.

Hf-Nd Isotopic Correlation in the Deccan Flood Basalt Province

Science.gov (United States)

Saha, A.; Basu, A. R.; Barling, J.; Anbar, A. D.; Hooper, P. R.

2001-12-01

Hafnium isotopes along with other isotopic and geochemical characteristics, including incompatible trace elements, of several of the lower formations of the Deccan Flood Basalt Province were analyzed to characterize petrogenesis of different tholeiitic lava suites, especially with respect to potential mantle and crustal sources. The rare earth elements of the different formations (from top to bottom- Mahabaleshwar, Ambenali, Bushe, Khandala and Neral) all show an LREE-enriched signature, concentrations varying between 30 to 60 times chondrite for La. (La/Lu)n values range from 4.1 to above 8 with the exception of Ambenali, which has a less LREE-enriched signature with (La/Lu)n values ranging between 3.6 to 5.3. Hafnium isotopic data of the lower formations of the Deccan show initial \\epsilonHf(T) values covering a range from -3 to -28. 176Lu/177Hf varies between 0.20 to 0.70. f(Lu/Hf) varies within a narrow range, between -0.90 to -0.97 while f(Sm/Nd) ranges from -0.84 to -0.86. Bushe gives the lowest range of \\epsilonHf(T) from -21 to -28 with the corresponding \\epsilonNd(T) varying between -4.0 and -16.9, while Khandala for almost the same range of neodymium isotopic values has \\epsilonHf(T) between -11 and -15. The \\epsilonHf(T) values of Neral is in between those of Khandala and Bushe, around -19. Ambenali, has the narrowest range with \\epsilonHf(T) of -3 and \\epsilonNd(T) between 3 and 5. The Ambenali suite reflects the least contaminated of the Deccan suite of lavas as analyzed here and previously confirmed by other isotopic studies. In Hf-Nd isotope correlation plot, the lower Deccan formations of Neral, Khandala and Bushe define individual subparallel arrays that are shallower than the oceanic basalt array and the overall terrestrial array, including the crustal array, although the bulk of the lower formation data fall within the crustal array of Vervoort et al (1999). From these subparallel Hf-Nd arrays, it is evident that the other end

Efficient oscillation regimes of an HF laser pumped by a nonchain chemical reaction initiated by a self-sustained discharge

International Nuclear Information System (INIS)

Panchenko, Aleksei N; Orlovskii, Viktor M; Tarasenko, Viktor F; Baksht, E Kh

2003-01-01

The amplitude - time and spectral characteristics of laser radiation and discharge characteristics in mixtures of SF 6 with hydrogen and hydrocarbons at a high lasing efficiency are investigated. Lasing efficiencies of ∼10 % with respect to the deposited energy are obtained under the pumping from capacitive and inductive energy storage units. It is shown that, during a pump pulse, the maximum efficiencies are achieved at high values of the parameter E/p in the laser gap. When profiled electrodes and UV preionisation are used, a specific output energy of a nonchain HF laser of ∼140 J L -1 atm -1 and a lasing efficiency of ∼4.5 % with respect to the stored energy were obtained. It is shown that the emission spectrum of a nonchain HF laser operating at high lasing efficiencies becomes significantly wider and cascade lasing is realised on the ν(3-2) → ν(2-1) → ν(1-0) vibrational transitions at several rotational lines. (lasers)

Alloy 33: A new material for the handling of HNO3/HF media in reprocessing of nuclear fuel

International Nuclear Information System (INIS)

Koehler, M.; Heubner, U.; Eichenhofer, K.W.; Renner, M.

1997-01-01

Alloy 33, an austenitic 33Cr-32Fe-31Ni-1.6Mo-0.6Cu-0.4N material shows excellent resistance to corrosion when exposed to highly oxidizing media as e.g. HNO 3 and HNO 3 /HF mixtures which are encountered in reprocessing of nuclear fuel. According to the test results available so far, resistance to corrosion in boiling azeotropic (67%) HNO 3 is about 6 and 2 times superior to AISI 304 L and 310 L. In higher concentrated nitric acid it can be considered corrosion resistant up to 95% HNO 3 at 25 C, up to 90% HNO 3 at 50 C and up to somewhat less than 85% HNO 3 at 75 C. In 20% HNO 3 /7% HF at 50 C its resistance to corrosion is superior to AISI 316 Ti and Alloy 28 by factors of about 200 and 2.4. Other media tested with different results include 12% HNO 3 with up to 3.5% HF and 0.4% HF with 32 to 67.5% HNO 3 at 90 C. Alloy 33 is easily fabricated into all product forms required for chemical plants (e.g. plate, sheet, strip, wire, tube and flanges). Components such as dished ends and tube to tube sheet weldments have been successfully fabricated facilitating the use of Alloy 33 for reprocessing of nuclear fuel

Perturbed-angular-correlation study of the electric-field gradient in {sup 181}Hf-doped and implanted indium sesquioxide

Energy Technology Data Exchange (ETDEWEB)

Renteria, M.; Requejo, F.G.; Bibiloni, A.G.; Pasquevich, A.F.; Shitu, J. [Departamento de Fisica, Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC N67, 1900 La Plata (Argentina); Freitag, K. [Institut fuer Strahlen- und Kernphysik der Universitaet Bonn, Nussallee 14-16, 5300 Bonn (Germany)

1997-06-01

We studied the hyperfine interactions of {sup 181}Ta in In{sub 2}O{sub 3} by means of perturbed-angular-correlation (PAC) measurements. We prepared thin films of indium sesquioxide with different degrees of initial amorphism and implanted them with {sup 181}Hf. Chemically prepared indium-sesquioxide powder samples were also made starting from neutron-irradiated HfCl{sub 4}, which provides the {sup 181}Hf PAC probes. PAC experiments were performed on each sample at room temperature, after each step of annealing programs at increasing temperatures up to the full crystallization of the samples. The results indicate that the PAC probe occupies preferentially the axially symmetric cation site. Point-charge-model calculations were performed. The calculated asymmetry parameters {eta} were compared with those obtained in {sup 181}Hf PAC experiments performed also on other binary oxides, showing that the symmetry of the electric-field-gradient (EFG) tensor at {sup 181}Ta cation sites in binary oxides is mainly determined by the nearest-neighbor oxygen-ion distribution around the probe. Comparisons of the experimental results in bixbyites obtained for both PAC probes, {sup 111}Cd and {sup 181}Ta, show that the local EFG in bixbyites, are strongly dependent on the geometry of the sites and the electronic configuration of the probes. {copyright} {ital 1997} {ital The American Physical Society}

Direct currents produced by hf heating of plasma

International Nuclear Information System (INIS)

Klima, R.

1974-01-01

In addition to the well-known diffusion currents, toroidal direct currents arise in h.f. heated plasmas as a result of a momentum transfer from the h.f. field to plasma particles. The estimates of steady-state conditions are given for these currents. Particularly, the possibility of stationary operation of a Tokamak device is analyzed. (author)

Comparison of 14 MeV isomer production of 178m2Hf and 179m2Hf using Feshbach-Kerman-Koonin and exciton preequilibrium models

International Nuclear Information System (INIS)

Chadwick, M.B.; Young, P.G.

1993-01-01

The 178m2 Hf(16+) isomeric state has a 31-yr half life and could pose serious radioactive problems in nuclear fusion reactors if its production in 14 MeV neutron-induced reactions is significant. We present statistical/preequilibrium model calculations for the production of this isomer in the 179 Hf(n, 2n) 178m2 Hf reaction, as well as the 25-days 12.5 - isomer in the 179 Hf(n,n') 179m2 Hf reaction, using two different preequilibrium models: the exciton model and the Feshbach-Kerman-Koonin (FKK) theory. Our calculations which use the exciton model agree well with measurements, but those with the FKK theory underestimate measurements. Our calculations axe the first to probe angular momentum transfer effects in the FKK theory and suggest that, as it is presently applied, high spin-transfer reactions are underestimated. We suggest modifications to the FKK statistical averaging procedure which may result in an improved agreement with experiment

Femtosecond pulse-width dependent trapping and directional ejection dynamics of dielectric nanoparticles

KAUST Repository

Chiang, Weiyi

2013-09-19

We demonstrate that laser pulse duration, which determines its impulsive peak power, is an effective parameter to control the number of optically trapped dielectric nanoparticles, their ejections along the directions perpendicular to polarization vector, and their migration distances from the trapping site. This ability to controllably confine and eject the nanoparticle is explained by pulse width-dependent optical forces exerted on nanoparticles in the trapping site and ratio between the repulsive and attractive forces. We also show that the directional ejections occur only when the number of nanoparticles confined in the trapping site exceeds a definite threshold. We interpret our data by considering the formation of transient assembly of the optically confined nanoparticles, partial ejection of the assembly, and subsequent filling of the trapping site. The understanding of optical trapping and directional ejections by ultrashort laser pulses paves the way to optically controlled manipulation and sorting of nanoparticles. © 2013 American Chemical Society.

Electric field gradients at 181Ta sites in HfOx

International Nuclear Information System (INIS)

Darriba, G.N.; Rodriguez, A.M.; Saitovitch, H.; Silva, P.R.J.; Pasquevich, A.F.

2007-01-01

In the present work we report preliminary results about the possibility to study properties of the order-disorder transition in HfO x solid solutions via the determination of the electric field gradient (EFG) at 181 Ta radioactive probes. Oxygen solution into the metal was achieved by arc melting stoichiometric amounts of metallic Hf and HfO 2 under argon atmosphere. Samples of HfO x with x=0.1 and 0.2 were prepared. Two types of samples were used for the perturbed angular correlation (PAC) experiments by doping alternatively with 181 Ta, by neutron irradiation, the metallic Hf or the hafnium oxide. The PAC results on both samples were identical, with disappearing hyperfine signals of the metal and the oxide, showing a complete diffusion of the probes independent of the way of doping. The PAC signal of the HfO x solid solution consisted in a wide distribution of EFGs due to the oxygen disorder. This scheme held even after long thermal treatments at high temperature (several days at 1273K). Annealing treatments at moderate temperature (600K) were also made. In these cases the samples were cooling at a very low rate. These results, together with those obtained by measuring samples below and above the order temperature are reported

Integrated microfluidic device for single-cell trapping and spectroscopy

KAUST Repository

Liberale, Carlo

2013-02-13

Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

Integrated microfluidic device for single-cell trapping and spectroscopy

KAUST Repository

Liberale, Carlo; Cojoc, G.; Bragheri, F.; Minzioni, P.; Perozziello, G.; La Rocca, R.; Ferrara, L.; Rajamanickam, V.; Di Fabrizio, Enzo M.; Cristiani, I.

2013-01-01

Optofluidic microsystems are key components towards lab-on-a-chip devices for manipulation and analysis of biological specimens. In particular, the integration of optical tweezers (OT) in these devices allows stable sample trapping, while making available mechanical, chemical and spectroscopic analyses.

Analysis of the Metal Oxide Space Clouds (MOSC) HF Propagation Environment

Science.gov (United States)

Jackson-Booth, N.; Selzer, L.

2015-12-01

Artificial Ionospheric Modification (AIM) attempts to modify the ionosphere in order to alter the high frequency (HF) propagation environment. It can be achieved through injections of aerosols, chemicals or radio (RF) signals into the ionosphere. The Metal Oxide Space Clouds (MOSC) experiment was undertaken in April/May 2013 to investigate chemical AIM. Two sounding rockets were launched from the Kwajalein Atoll (part of the Marshall Islands) and each released a cloud of vaporized samarium (Sm). The samarium created a localized plasma cloud, with increased electron density, which formed an additional ionospheric layer. The ionospheric effects were measured by a wide range of ground based instrumentation which included a network of high frequency (HF) sounders. Chirp transmissions were made from three atolls and received at five sites within the Marshall Islands. One of the receive sites consisted of an 18 antenna phased array, which was used for direction finding. The ionograms have shown that as well as generating a new layer the clouds created anomalous RF propagation paths, which interact with both the cloud and the F-layer, resulting in 'ghost traces'. To fully understand the propagation environment a 3D numerical ray trace has been undertaken, using a variety of background ionospheric and cloud models, to find the paths through the electron density grid for a given fan of elevation and azimuth firing angles. Synthetic ionograms were then produced using the ratio of ray path length to speed of light as an estimation of the delay between transmission and observation for a given frequency of radio wave. This paper reports on the latest analysis of the MOSC propagation environment, comparing theory with observations, to further understanding of AIM.

Inorganic chemistry

International Nuclear Information System (INIS)

Anon.

1975-01-01

Two compounds (O 2 SbF 6 and IF 6 SbF 6 ) were tested as chemical reagents for trapping the heavier noble gases (isotopes of radon and xenon) released to the atmosphere by nuclear power plants and fuel reprocessing plants. Results on the Raman scattering of anhydrous liquid HF are reported. (U.S.)

Atomic scale engineering of HfO2-based dielectrics for future DRAM applications

International Nuclear Information System (INIS)

Dudek, Piotr

2011-01-01

Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO 2 thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO 2 (BaHfO 3 ) films and Ti-added BaHfO 3 (BaHf 0.5 Ti 0.5 O 3 ) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO 3 (k∝38) and BaHf 0.5 Ti 0.5 O 3 (k∝90) with respect to monoclinic HfO 2 (k∝19). Meanwhile the CET values scaled down to 1 nm for BaHfO 3 and ∝0.8 nm for BaHf 0.5 Ti 0.5 O 3 with respect to HfO 2 (CET=1.5 nm). The Hf 4+ ions substitution in BaHfO 3 by Ti 4+ ions led to a significant decrease of thermal budget from 900 C for BaHfO 3 to 700 C for BaHf 0.5 Ti 0.5 O 3 . Future studies need to focus on the use of appropriate metal electrodes (high work function) and on film deposition process (homogeneity) for better current leakage control. (orig.)

Testing and evaluation of eight decontamination chemicals

International Nuclear Information System (INIS)

Demmer, R.

1994-09-01

This report covers experimental work comparing eight different decontamination chemicals. Seven of these chemicals have some novelty, or are not currently in use at the ICPP. The eighth is a common ICPP decontamination reagent used as a baseline for effective comparison. Decontamination factors, waste generation values, and corrosion rates are tabulated for these chemicals. Recommendations are given for effective methods of non-sodium or low-sodium decontamination chemicals. The two most effective chemical for decontamination found in these test were a dilute hydrofluoric and nitric acid (HF/HNO 3 ) mixture and a fluoroboric acid solution. The fluoroboric acid solution (1 molar) was by far the most effective decontamination reagent, but suffered the problem of generating significant final calcine volume. The HF/HNO 3 solution performed a very good decontamination of the SIMCON coupons while generating only small amounts of calcine volume. Concentration variables were also tested, and optimized for these two solutions. Several oxidation/reduction decon chemical systems were also tested. These systems were similar to the TURCO 4502 and TURCO 4521 solutions used for general decontamination at the ICPP. A low sodium alternative, nitric acid/potassium permanganate, to the ''high sodium'' TURCO 4502 was tested extensively, optimized and recommended for general ICPP use. A reductive chemical solution, oxalic acid/nitric acid was also shown to have significant advantages

Heavy ion studies with CMS HF calorimeter

International Nuclear Information System (INIS)

Damgov, I.; Genchev, V.; Kolosov, V.A.; Lokhtin, I.P.; Petrushanko, S.V.; Sarycheva, L.I.; Teplov, S.Yu.; Shmatov, S.V.; Zarubin, P.I.

2001-01-01

The capability of the very forward (HF) calorimeter of the CMS detector at LHC to be applied to specific studies with heavy ion beams is discussed. The simulated responses of the HF calorimeter to nucleus-nucleus collisions are used for the analysis of different problems: reconstruction of the total energy flow in the forward rapidity region, accuracy of determination of the impact parameter of collision, study of fluctuations of the hadronic-to-electromagnetic energy ratio, fast inelastic event selection

Hf{sub 3}Fe{sub 4}Sn{sub 4} and Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x}: Two stannide intermetallics with low-dimensional iron sublattices

Energy Technology Data Exchange (ETDEWEB)

Calta, Nicholas P. [Department of Chemistry, Northwestern University (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University (United States); Materials Science Division, Argonne National Laboratory (United States)

2016-04-15

This article reports two new Hf-rich intermetallics synthesized using Sn flux: Hf{sub 3}Fe{sub 4}Sn{sub 4} and Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x}. Hf{sub 3}Fe{sub 4}Sn{sub 4} adopts an ordered variant the Hf{sub 3}Cu{sub 8} structure type in orthorhombic space group Pnma with unit cell edges of a=8.1143(5) Å, b=8.8466(5) Å, and c=10.6069(6) Å. Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x}, on the other hand, adopts a new structure type in Cmc2{sub 1} with unit cell edges of a=5.6458(3) Å, b=35.796(2) Å, and c=8.88725(9) Å for x=0. It exhibits a small amount of phase width in which Sn substitutes on one of the Fe sites. Both structures are fully three-dimensional and are characterized by pseudo one- and two-dimensional networks of Fe–Fe homoatomic bonding. Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x} exhibits antiferromagnetic order at T{sub N}=46(2) K and its electrical transport behavior indicates that it is a normal metal with phonon-dictated resistivity. Hf{sub 3}Fe{sub 4}Sn{sub 4} is also an antiferromagnet with a rather high ordering temperature of T{sub N}=373(5) K. Single crystal resistivity measurements indicate that Hf{sub 3}Fe{sub 4}Sn{sub 4} behaves as a Fermi liquid at low temperatures, indicating strong electron correlation. - Graphical abstract: Slightly different growth conditions in Sn flux produce two new intermetallic compounds: Hf{sub 3}Fe{sub 4}Sn{sub 4} and Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x}. - Highlights: • Single crystals of both Hf{sub 3}Fe{sub 4}Sn{sub 4} and Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x} were grown using Sn flux. • The crystal structures were determined using single crystal X-ray diffraction. • The Fe moments in Hf{sub 3}Fe{sub 4}Sn{sub 4} display AFM order below T{sub N}=373 K. • The Fe moments in Hf{sub 9}Fe{sub 4−x}Sn{sub 10+x} display AFM order below T{sub N}=46 K.

Comparison of HF radar measurements with Eulerian and Lagrangian surface currents

Science.gov (United States)

Röhrs, Johannes; Sperrevik, Ann Kristin; Christensen, Kai Håkon; Broström, Göran; Breivik, Øyvind

2015-05-01

High-frequency (HF) radar-derived ocean currents are compared with in situ measurements to conclude if the radar observations include effects of surface waves that are of second order in the wave amplitude. Eulerian current measurements from a high-resolution acoustic Doppler current profiler and Lagrangian measurements from surface drifters are used as references. Directional wave spectra are obtained from a combination of pressure sensor data and a wave model. Our analysis shows that the wave-induced Stokes drift is not included in the HF radar-derived currents, that is, HF radars measure the Eulerian current. A disputed nonlinear correction to the phase velocity of surface gravity waves, which may affect HF radar signals, has a magnitude of about half the Stokes drift at the surface. In our case, this contribution by nonlinear dispersion would be smaller than the accuracy of the HF radar currents, hence no conclusion can be made. Finally, the analysis confirms that the HF radar data represent an exponentially weighted vertical average where the decay scale is proportional to the wavelength of the transmitted signal.

Nanotube formation and morphology change of Ti alloys containing Hf for dental materials use

International Nuclear Information System (INIS)

Jeong, Yong-Hoon; Lee, Kang; Choe, Han-Cheol; Ko, Yeong-Mu; Brantley, William A.

2009-01-01

In this paper, Ti-Hf (10, 20, 30 and 40 wt.%) alloys were prepared by arc melting, and subjected to heat treatment for 24 h at 1000 o C in an argon atmosphere. Formation of surface nanotubes was achieved by anodizing a Ti-Hf alloy in 1.0 M H 3 PO 4 electrolytes with small amounts of NaF at room temperature. Microstructures of the alloys and nanotube morphology were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The homogenized Ti-Hf alloys had a needle-like microstructure of α phase, and nanotubes formed on Ti-xHf alloys had the anatase phase after treatment that promoted crystallization. Uniform nanotubes formed for Hf contents up to 20 wt.%. Irregular nanotubes formed on the Ti-30Hf and Ti-40Hf alloys. The structure of the irregular layers on the Ti-30Hf and Ti-40Hf alloys had nanotubes of two sizes. Increasing the Hf content in Ti led to the formation of nanotubes with more narrow size. The pores in the nanotubes typically had a diameter ranging from 80-120 nm and a length of approximately 1.7 μm. It is concluded that nanotube morphology on Ti-Hf alloys can controlled by varying the amount of Hf.

First principles study the stability and mechanical properties of MC (M = Ti, V, Zr, Nb, Hf and Ta) compounds

International Nuclear Information System (INIS)

Liu, YangZhen; Jiang, YeHua; Zhou, Rong; Feng, Jing

2014-01-01

Highlights: • The stability and elastic constants of carbides are studied by first principles. • The rules of modulus of MC compounds are discussed by their group. • The hardness of carbides is estimated in this paper at the first time. -- Abstract: The first principles calculations based on density functional theory (DFT) were adopted to investigate the stability, elastic constants, chemical bonding, Debye temperature and hardness of MC (M = Ti, V, Zr, Nb, Hf and Ta) compounds. The cohesive energy and formation enthalpy of these carbides indicate that they are thermodynamically stable structures. The population analysis was used to discuss the chemical bonding of these carbides. The elastic constants and moduli of these compounds were calculated. The results show that the bulk moduli of the carbides of transition metals from the fourth group (TiC, ZrC, HfC) are lower than the fifth group (VC, NbC, TaC). However, the Young’s moduli of the carbides from fourth group are higher than the fifth group. The hardness of compounds was estimated using a semi empirical hardness theory

Oxidation behavior of TiC, ZrC, and HfC dispersed in oxide matrices

International Nuclear Information System (INIS)

Arun, R.; Subramanian, M.; Mehrotra, G.M.

1990-01-01

The oxidation behavior of hot pressed TiC-Al 2 O 3 , TiC-ZrO 2 , ZrC-ZrO 2 , and HfC-HfO 2 composites has been investigated at 1273 K. The oxidation of TiC, ZrC, and HfC in hot-pressed composites containing ZrO 2 and HfO 2 has been found to be extremely rapid. The kinetics of oxidation of TiC and a 90 wt% TiC-Al 2 O 3 composite appear to be faster compared to that of pure TiC. X-ray diffraction results for hot-pressed ZrC-HfO 2 and HfC-HfO 2 composites indicate partial stabilization of tetragonal ZrO 2 and HfO 2 phases in these composites

Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

Science.gov (United States)

Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

2015-06-01

High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

[Effect of a multifunctional instrument (HF scissors) in parotis surgery].

Science.gov (United States)

Strauss, G; Schaller, S; Gollnick, I

2014-03-01

Lateral parotidectomy is a demanding surgical procedure and requires a large number of instruments with a high frequency (HF) of alternating. Many functions, such as preparing, spreading, coagulating and cutting could be combined by using scissors with an integrated function of bipolar coagulation. This study has targeted an investigation of technical application, influence on surgery time, frequency of HF application and change of instruments. In the period between 01 April 2011 and 30 September 2012 (18 months) 35 procedures of lateral parotidectomy in 35 patients were investigated. In all cases lateral parotidectomy was carried out with a similar technique (modified extracapsular preparation). Workflow data were used from a control group in the period between 01 January 2009 and 31 December 2010 (24 months). The following parameters from both groups were documented and evaluated: incision-suture times (subdivided into nine sections of the procedure), change of instruments, period of application for HF function and early facial nerve function (6 h and 6 days after surgery according to House-Brackmann). Additionally, in the HF+ group a questionnaire that facilitated subjective evaluation of instruments was analyzed. It was possible to perform the surgery in both groups with neither technical nor surgical intraoperative complications. Incision-suture times showed an average reduction of 31.6 min (34.8 %) in the HF+ group. There was a reduction in the change of instruments compared to a conventional group (CONV) by up to 62.7 %. With the deployment of HF scissors there was a clear increase in the use of HF surgery by more than 100 % when comparing incision-suture times. Evaluation of both groups according to House-Brackmann showed a similar postoperative facial nerve function. The surgeons involved were of the opinion that in all 35 surgeries with HF scissors the intervention was easier and more comfortable. The use of HF scissors is appropriate for parotid gland

29Si NMR Chemical Shift Calculation for Silicate Species by Gaussian Software

Science.gov (United States)

Azizi, S. N.; Rostami, A. A.; Godarzian, A.

2005-05-01

Hartree-Fock self-consistent-field (HF-SCF) theory and the Gauge-including atomic orbital (GIAO) methods are used in the calculation of 29Si NMR chemical shifts for ABOUT 90 units of 19 compounds of various silicate species of precursors for zeolites. Calculations have been performed at geometries optimized at the AM1 semi-empirical method. The GIAO-HF-SCF calculations were carried out with using three different basis sets: 6-31G*, 6-31+G** and 6-311+G(2d,p). To demonstrate the quality of the calculations the calculated chemical shifts, δ, were compared with the corresponding experimental values for the compounds in study. The results, especially with 6-31+g** are in excellent agreement with experimental values. The calculated chemical shifts, in practical point of view, appear to be accurate enough to aid in experimental peak assignments. The difference between the experimental and calculated 29Si chemical shift values not only depends on the Qn units but also it seems that basis set effects and the level of theory is more important. For the series of molecules studied here, the standard deviations and mean absolute errors for 29Si chemical shifts relative to TMS determined using Hartree--Fock 6-31+G** basis is nearly in all cases smaller than the errors for shifts determined using HF/6-311+G(2d,p).

Low-Frequency Waves in HF Heating of the Ionosphere

Science.gov (United States)

Sharma, A. S.; Eliasson, B.; Milikh, G. M.; Najmi, A.; Papadopoulos, K.; Shao, X.; Vartanyan, A.

2016-02-01

Ionospheric heating experiments have enabled an exploration of the ionosphere as a large-scale natural laboratory for the study of many plasma processes. These experiments inject high-frequency (HF) radio waves using high-power transmitters and an array of ground- and space-based diagnostics. This chapter discusses the excitation and propagation of low-frequency waves in HF heating of the ionosphere. The theoretical aspects and the associated models and simulations, and the results from experiments, mostly from the HAARP facility, are presented together to provide a comprehensive interpretation of the relevant plasma processes. The chapter presents the plasma model of the ionosphere for describing the physical processes during HF heating, the numerical code, and the simulations of the excitation of low-frequency waves by HF heating. It then gives the simulations of the high-latitude ionosphere and mid-latitude ionosphere. The chapter also briefly discusses the role of kinetic processes associated with wave generation.

Effects of oxide traps, interface traps, and ''border traps'' on metal-oxide-semiconductor devices

International Nuclear Information System (INIS)

Fleetwood, D.M.; Winokur, P.S.; Reber, R.A. Jr.; Meisenheimer, T.L.; Schwank, J.R.; Shaneyfelt, M.R.; Riewe, L.C.

1993-01-01

We have identified several features of the 1/f noise and radiation response of metal-oxide-semiconductor (MOS) devices that are difficult to explain with standard defect models. To address this issue, and in response to ambiguities in the literature, we have developed a revised nomenclature for defects in MOS devices that clearly distinguishes the language used to describe the physical location of defects from that used to describe their electrical response. In this nomenclature, ''oxide traps'' are simply defects in the SiO 2 layer of the MOS structure, and ''interface traps'' are defects at the Si/SiO 2 interface. Nothing is presumed about how either type of defect communicates with the underlying Si. Electrically, ''fixed states'' are defined as trap levels that do not communicate with the Si on the time scale of the measurements, but ''switching states'' can exchange charge with the Si. Fixed states presumably are oxide traps in most types of measurements, but switching states can either be interface traps or near-interfacial oxide traps that can communicate with the Si, i.e., ''border traps'' [D. M. Fleetwood, IEEE Trans. Nucl. Sci. NS-39, 269 (1992)]. The effective density of border traps depends on the time scale and bias conditions of the measurements. We show the revised nomenclature can provide focus to discussions of the buildup and annealing of radiation-induced charge in non-radiation-hardened MOS transistors, and to changes in the 1/f noise of MOS devices through irradiation and elevated-temperature annealing

Synergistic Trap Response of the False Stable Fly and Little House Fly (Diptera: Muscidae) to Acetic Acid and Ethanol, Two Principal Sugar Fermentation Volatiles.

Science.gov (United States)

Landolt, Peter J; Cha, Dong H; Zack, Richard S

2015-10-01

In an initial observation, large numbers of muscoid flies (Diptera) were captured as nontarget insects in traps baited with solutions of acetic acid plus ethanol. In subsequent field experiments, numbers of false stable fly Muscina stabulans (Fallén) and little house fly Fannia canicularis (L.) trapped with the combination of acetic acid plus ethanol were significantly higher than those trapped with either chemical alone, or in unbaited traps. Flies were trapped with acetic acid and ethanol that had been formulated in the water of the drowning solution of the trap, or dispensed from polypropylene vials with holes in the vial lids for diffusion of evaporated chemical. Numbers of both species of fly captured were greater with acetic acid and ethanol in glass McPhail traps, compared to four other similar wet trap designs. This combination of chemicals may be useful as an inexpensive and not unpleasant lure for monitoring or removing these two pest fly species. Published by Oxford University Press on behalf of Entomological Society of America 2015. This work is written by US Government employees and is in the public domain in the US.

Crystal structures of KM(AsF{sub 6}){sub 3} (M{sup 2+} = Mg, Co, Mn, Zn), KCu(SbF{sub 6}){sub 3} and [Co(HF){sub 2}]Sr[Sr(HF)]{sub 2}-[Sr(HF){sub 2}]{sub 2}[AsF{sub 6}]{sub 12}

Energy Technology Data Exchange (ETDEWEB)

Mazej, Zoran; Goreshnik, Evgeny [Jozef Stefan Institute, Ljubljana (Slovakia). Dept. of Inorganic Chemisrty and Technology

2015-05-01

The KM(AsF{sub 6}){sub 3} (M{sup 2+} = Mg, Co, Mn, Zn) and KCu(SbF{sub 6}){sub 3} compounds crystallize isotypically to previously known KNi(AsF{sub 6}){sub 3}. The main features of the structure of these compounds are rings of MF{sub 6} octahedra sharing apexes with AsF{sub 6} octahedra connected into infinite tri-dimensional frameworks. In this arrangement cavities are formed where K{sup +} cations are placed. Single crystals of CoSr{sub 5}(AsF{sub 6}){sub 12}.8HF were obtained as one of the products after the crystallization of 3KF/CoF{sub 2}/SrF{sub 2} mixture in the presence of AsF{sub 5} in anhydrous HF. The CoSr{sub 5}(AsF{sub 6}){sub 12}.8HF is monoclinic, C/2c (No.15), with a = 26.773(5) Aa, b = 10.087(2) Aa, c = 21.141(5) Aa, β = 93.296(13) {sup circle}, V = 5699.9(19) Aa{sup 3} at 200 K, and Z = 4. There are three crystallographically non-equivalent Sr{sup 2+} cations in the crystal structure of CoSr{sub 5}(AsF{sub 6}){sub 12}.8HF. The Sr1 is coordinated by ten fluorine atoms from eight different [AsF{sub 6}]- anions, meanwhile Sr2 and Sr3 are bound to nine fluorine atoms provided by one HF and eight AsF{sub 6} units or by two HF and six AsF{sub 6} units, respectively. The Co{sup 2+} is coordinated distorted-octahedrally by six fluorine atoms from two HF molecules and four different AsF{sub 6} units. All those moieties in the crystal structure of [Co(HF){sub 2}]Sr[Sr(HF)]{sub 2}[Sr(HF){sub 2}]{sub 2}[AsF{sub 6}]{sub 12} are connected into tridimensional framework. The CoSr{sub 5}(AsF{sub 6}){sub 12}.8HF is a unique example of compound where HF molecules are directly bound via fluorine atoms to two different metal centres.

Study of bulk Hafnium oxide (HfO2) under compression

Science.gov (United States)

Pathak, Santanu; Mandal, Guruprasad; Das, Parnika

2018-04-01

Hafnium oxide (HfO2) is a technologically important material. This material has K-value of 25 and band gap 5.8 eV. A k value of 25-30 is preferred for a gate dielectric [1]. As it shows good insulating and capacitive properties, HfO2 is being considered as a replacement to SiO2 in microelectronic devices as gate dielectrics. On the other hand because of toughening mechanism due to phase transformation induced by stress field observed in these oxides, HFO2 has been a material of investigations in various configurations for a very long time. However the controversies about phase transition of HfO2 under pressure still exists. High quality synchrotron radiation has been used to study the structural phase transition of HfO2 under pressure.

Shrew trap efficiency

DEFF Research Database (Denmark)

Gambalemoke, Mbalitini; Mukinzi, Itoka; Amundala, Drazo

2008-01-01

We investigated the efficiency of four trap types (pitfall, Sherman LFA, Victor snap and Museum Special snap traps) to capture shrews. This experiment was conducted in five inter-riverine forest blocks in the region of Kisangani. The total trapping effort was 6,300, 9,240, 5,280 and 5,460 trap......, our results indicate that pitfall traps are the most efficient for capturing shrews: not only do they have a higher efficiency (yield), but the taxonomic diversity of shrews is also higher when pitfall traps are used....

Small signal gain measurements in a small scale HF overtone laser

Energy Technology Data Exchange (ETDEWEB)

Wisniewski, C.F.; Hewett, K.B.; Manke, G.C. II; Hager, G.D. [Air Force Research Laboratory, Directed Energy Directorate, 3550 Aberdeen Ave SE, Kirtland AFB, NM 87117-5776 (United States); Crowell, P.G. [Northrup Grumman Information Technology, Science and Technology Operating Unit, Advanced Technology Division, P.O. Box 9377, Albuquerque, NM 87119-9377 (United States); Truman, C.R. [Mechanical Engineering Department, University of New Mexico, Albuquerque, NM 87131 (United States)

2003-07-01

The overtone gain medium of a small-scale HF overtone laser was probed using a sub-Doppler tunable diode laser. Two-dimensional spatially resolved small signal gain and temperature maps were generated for several ro-vibrational transitions in the HF (v=2{yields}v=0) overtone band. Our results compare well with previous measurements of the overtone gain in a similar HF laser device. (orig.)

Medfly female attractant trapping studies in Guatemala

International Nuclear Information System (INIS)

Jeronimo, F.; Rendon, P.; Villatoro, C.

1999-01-01

Experiments were conducted from 1994 - 1998 to test the attractiveness of combinations of food-based chemicals for C. capitata (medfly) in Guatemala. Most studies were done in coffee. The 1995 studies, using the FA-2 attractants (ammonium acetate and putrescine) showed that this combination was attractive for females and had potential for use in conjunction with a SIT program. The 1996 studies at three elevations demonstrated that, in general, these attractants, when used in either the Open Bottom Dry Trap (OBDT), Closed Bottom Dry Trap (CBDT), or International Pheromone's McPhail Trap (IPMT) performed better than the Jumbo McPhail trap (JMT) baited with NuLure and borax (NU+B) for capture of feral females. At the high elevation (1400 m), the IPMT with FA-2 and OBDT with FA-2 were best; at the middle elevation (1100 m), the ORDT, IPMT, and CBDT with FA-2 were best; and at low elevations (659 m), the IPMT with FA-2, JMT with NU+B and ORDT with FA-2 were equal in performance. At the middle elevation, using sterile flies, the OBDT with FA-2 worked best. When experiments were carried out in pear, the traps using the FA-2 attractants captured more female flies than the JMT, NU+B, but not significantly more. During the 1997 trials, a third component, trimethylamine was added to the two component lure (FA-3). This attractant was tested in a number of locally produced traps using 2 I soft drink bottles with different color bottoms. The dry versions of the traps contained a yellow sticky insert. All study sites were at low elevation 600 - 650 m, in coffee, testing both sterile and feral flies. With the feral flies during the first phase of the study at finca San Carlos, there were no significant differences between treatments, at finca San Luis, the clear local trap with sticky insert and the green local trap with sticky insert were best, and at finca Valapraiso, the green local trap with yellow sticky insert and yellow local trap with sticky insert captured more flies

Chemical and nuclear properties of Rutherfordium (Element 104)

Energy Technology Data Exchange (ETDEWEB)

Kacher, Christian D. [Univ. of California, Berkeley, CA (United States)

1995-10-30

The chemical-properties of rutherfordium (Rf) and its group 4 homologs were studied by sorption on glass support surfaces coated with cobalt(II)ferrocyanide and by solvent extraction with tributylphosphate (TBP) and triisooctylamine (TIOA). The surface studies showed that the hydrolysis trend in the group 4 elements and the pseudogroup 4 element, lb, decreases in the order Rf>Zr≈Hf>Th. This trend was attributed to relativistic effects which predicted that Rf would be more prone to having a coordination number of 6 than 8 in most aqueous solutions due to a destabilization of the 6d_5/2 shell and a stabilization of the 7p_I/2 shell. This hydrolysis trend was confirmed in the TBP/HBr solvent extraction studies which showed that the extraction trend decreased in the order Zr>Hf>Rf?Ti for HBr, showing that Rf and Ti did not extract as well because they hydrolyzed more easily than Zr and Hf. The TIOA/HF solvent extraction studies showed that the extraction trend for the group 4 elements decreased in the order Ti>Zr≈Hf>Rf, in inverse order from the trend of ionic radii Rf>Zr≈Hf>Ti. An attempt was made to produce ²⁶³Rf (a) via the ²⁴⁸Cm(²²Ne, α3n) reaction employing thenoyltrifluoroacetone (TTA) solvent extraction chemistry and (b) via the ²⁴⁹Bk(¹⁸O,4n) reaction employing the Automated Rapid Chemistry Apparatus (ARCA). In the TTA studies, 16 fissions were observed but were all attributed to ²⁵⁶Fm. No alpha events were observed in the Rf chemical fraction. A 0.2 nb upper limit production cross section for the ²⁴⁸Cm(²²Ne, α3n)²⁶³Rf reaction was calculated assuming the 500-sec half-life reported previously by Czerwinski et al. [CZE92A].

Removal of fluoride from aqueous nitric acid

International Nuclear Information System (INIS)

Pruett, D.J.; Howerton, W.B.; Mailen, J.C.

1981-06-01

Several methods for removing fluoride from aqueous nitric acid were investigated and compared with the frequently used aluminum nitrate-calcium nitrate (Ca 2+ -Al 3+ ) chemical trap-distillation system. Zirconium oxynitrate solutions were found to be superior in preventing volatilization of fluoride during distillation of the nitric acid, producing decontamination factors (DFs) on the order of 2 x 10 3 (vs approx. 500 for the Ca 2+ -Al 3+ system). Several other metal nitrate systems were tested, but they were less effective. Alumina and zirconia columns proved highly effective in removing HF from HF-HNO 3 vapors distilled through the columns; fluoride DFs on the order of 10 6 and 10 4 , respectively, were obtained. A silica gel column was very effective in adsorbing HF from HF-HNO 3 solutions, producing a fluoride DF of approx. 10 4

Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

International Nuclear Information System (INIS)

Park, Woojin; Jo, Gunho; Hong, Woong-Ki; Yoon, Jongwon; Choe, Minhyeok; Ji, Yongsung; Kim, Geunjin; Kahng, Yung Ho; Lee, Kwanghee; Lee, Takhee; Lee, Sangchul; Wang, Deli

2011-01-01

We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.

Production and chemical separation of 48 V radioisotope

International Nuclear Information System (INIS)

Szucs, Z.; Dudu, D.; Cimpeanu, C.; Luca, A.; Duta, E.; Sahagia, M.

2003-01-01

The positron emitter 48 V isotope (T 1/2 =16 d, γ-lines: 511 keV (100%), 983.5 (100%), 1312 (97.6%)) is of interest in several fields of science. This is valid for transmitting scans in the validation process of PET-camera by positron emission. It can be used as an industrial monitoring isotope by its γ-photons having high energy and intensity. Also, it is suitable for biological study since it is the only radioisotope of the biological trace element vanadium which can be a radiotracer due to its longer half-life. The 48 V was produced by nat Ti (d,xn) 48 V nuclear reaction in the U-120 cyclotron with activity of 6 mCi. The energy of irradiating beam was 13 MeV, its intensity was 5 μA and the metallic Ti target dimensions were 16 x 11 x 2 mm. For target cooling, the water circulation in the back side was used. After 3 cooling days, only 48 V, and some 46 Sc (T 1/2 = 84 d), produced by the side nuclear reaction 48 Ti (d,α) 46 Sc were found in the target. For the preparation of 48 V source, the Ti target was dissolved in HF and sulfuric acid. The ion exchange separation was developed for both dissolving methods. The dissolution of the chemically resistant Ti target is so violent in concentrated (3.5 % m/m) HF, that it is necessary to be carried out in polyethylene tube in order to avoid the splash of the dissolved target. An anion exchange column, Dowex 1-8 (size 100-200 mesh, length 12 cm, ID 10 mm, treated 1 day earlier, prepared fresh), was used for separation in HF media. The reduced ionic form of Ti bonds to resin, therefore the dissolved target was saturated with sulfur-dioxide produced in the Kipp-equipment by the following chemical reaction: Na 2 SO 3 + 2 HCl → 2 NaCl + H 2 SO 3 . The treated solution was diluted to a concentration of 2 mol/l of HF and the same concentration of the HF was used as an eluent for separation. Flow rate of the elution was 1 ml/min. The eluate was cooled fractionally. The fractions were measured by γ-spectrometry, which

Suspended HfO2 photonic crystal slab on III-nitride/Si platform

International Nuclear Information System (INIS)

Wang, Yongjin; Feng, Jiao; Cao, Ziping; Zhu, Hongbo

2014-01-01

We present here the fabrication of suspended hafnium oxide (HfO 2 ) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO 2 photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO 2 film, and suspended HfO 2 photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO 2 nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials. (orig.)

Integrated magnetics design for HF-link power converters

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

This paper deals with the design of integrated magnetics for HF-link converters, where the two integrated magnetic components on the same core do not necessarily belong to the same voltage loop. Depending on the specific HF-link converter topology, the proposed integrated magnetics can either alleviate the derivation of independent auxiliary supply voltages from the main transformer or integrate other magnetic structures, thus saving board space and cutting costs. (au)

Efektifitas Alat Perangkap (Trapping Nyamuk Vektor Demam Berdarah Dengue dengan Fermentasi Gula

Directory of Open Access Journals (Sweden)

Endang Puji Astuti

2013-02-01

Full Text Available Abstracts. Aedes aegypti is the main vector of dengue fever that is still become health problem in the world. Various control efforts has been done at several areas through chemically or naturally control. Developing mosquitoes trapping tool is an alternative method to control mosquitoes besides insecticides utilization. This laboratorium research utilize sugar fermen ted process to yield CO2 as one of attractan to mosquito. Production of ethanol and CO2 can be yielded from anaerob sugar ferm en ta tion proccess (without O2 by khamir Saccharomyces cerevisiae activities. The trapped mosquitoes was observed up to 48 hours exposure, the highest average of mosquito trapped is on solution treatment with yeast 1 gram (43.2% and 40 gr sugar (48.4%. The highest effectivity oftrapping tool both inside or outside was on the 14th day. There were declained amount of trapped mosquitos on 16th and 18th days. This laboratorium research has described that trapping tool with sugar fermented solution were effective to control population of dengue vector.Keywords: trapping, sugar fermentation, Aedes aegypti

An aircraft-borne chemical ionization – ion trap mass spectrometer (CI-ITMS for fast PAN and PPN measurements

Directory of Open Access Journals (Sweden)

H. Schlager

2011-02-01

Full Text Available An airborne chemical ionization ion trap mass spectrometer instrument (CI-ITMS has been developed for tropospheric and stratospheric fast in-situ measurements of PAN (peroxyacetyl nitrate and PPN (peroxypropionyl nitrate. The first scientific deployment of the FASTPEX instrument (FASTPEX = Fast Measurement of Peroxyacyl nitrates took place in the Arctic during 18 missions aboard the DLR research aircraft Falcon, within the framework of the POLARCAT-GRACE campaign in the summer of 2008. The FASTPEX instrument is described and characteristic properties of the employed ion trap mass spectrometer are discussed. Atmospheric data obtained at altitudes of up to ~12 km are presented, from the boundary layer to the lowermost stratosphere. Data were sampled with a time resolution of 2 s and a 2σ detection limit of 25 pmol mol−1. An isotopically labelled standard was used for a permanent on-line calibration. For this reason the accuracy of the PAN measurements is better than ±10% for mixing ratios greater than 200 pmol mol−1. PAN mixing ratios in the summer Arctic troposphere were in the order of a few hundred pmol mol−1 and generally correlated well with CO. In the Arctic boundary layer and lowermost stratosphere smaller PAN mixing ratios were observed due to a combination of missing local sources of PAN precursor gases and efficient removal processes (thermolysis/photolysis. PPN, the second most abundant PAN homologue, was measured simultaneously. Observed PPN/PAN ratios range between ~0.03 and 0.3.

Fretting wear of ZrN and Zr(21% Hf)N coatings

Energy Technology Data Exchange (ETDEWEB)

Atar, E. [Gebze Inst. of Tech., Material Science and Engineering Dept., Kocaeli (Turkey); Cimenoglu, H.; Kayali, E.S. [Istanbul Technical Univ., Dept. of Metallurgy and Materials Engineering, Istanbul (Turkey)

2004-07-01

In this study, the wear behaviours of ZrN and Zr(21% Hf)N coatings, deposited on hardened AISI D2 cold work tool steel were examined by a fretting wear tester. The hardness of ZrN and Zr(21% Hf)N coatings were almost the same, where as they exhibited different wear resistance. Addition of 21% Hf to ZrN coating achieved about 25% increase in the wear resistance. (orig.)

Fretting wear of ZrN and Zr(21% Hf)N coatings

International Nuclear Information System (INIS)

Atar, E.; Cimenoglu, H.; Kayali, E.S.

2004-01-01

In this study, the wear behaviours of ZrN and Zr(21% Hf)N coatings, deposited on hardened AISI D2 cold work tool steel were examined by a fretting wear tester. The hardness of ZrN and Zr(21% Hf)N coatings were almost the same, where as they exhibited different wear resistance. Addition of 21% Hf to ZrN coating achieved about 25% increase in the wear resistance. (orig.)

Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

Energy Technology Data Exchange (ETDEWEB)

Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

2012-09-01

Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

Simultaneous measurements of HF-enhanced plasma waves and artificial field-aligned irregularities at Arecibo

International Nuclear Information System (INIS)

Noble, S.T.; Djuth, F.T.

1990-01-01

Two radar systems with beams intersecting in the HF-modified F region were used to simultaneously measure HF-enhanced plasma lines (HFPLs) and artificial geomagnetic field-aligned irregularities (AFAIs). The Arecibo 430-MHz radar was used for the HFPL observations, and a portable 49.92-MHz backscatter radar was deployed on the island of Guadeloupe to monitor the AFAIs. The experiment was desgined to examine the degree to which HF-induced plasma turbulence influences the development of AFAIs. When the HF beam is stepped up in power, sustained HFPLs and AFAIs are first observed at the same HF power level, indicating that ponderomotively driven instabilities may be involved in the early time development of AFAIs. As the HF power is increased, the HFPL backscatter power begins to saturate at ∼70 MW effective radiated power (ERP). However, the backscatter from AFAIs is linearly dependent on HF power, even at the highest (120 MW ERP) HF power levels available at Arecibo. This suggests that additional processes may contribute to the development of AFAIs. For example, ponderomotively driven instabilities may give rise to weak geomagnetic field-aligned irregularities that are subsequently driven unstable by processes excited near the upper hybrid resonance. It is also likely that AFAIs greatly impact the development of HF-induced plasma turbulence at late times (>1 s) following HF turn-on. Once the ionosphere is preconditioned by high-power HF modifications, AFAIs and HFPLs can be simultaneously sustained at a much lower HF power level than that needed to originally excite them. The nature of the preconditioning process is currently not well understood. New theoretical initiatives are clearly needed to guide future experimental activity in this area

Pulsed inductive HF laser

Energy Technology Data Exchange (ETDEWEB)

Razhev, A M; Kargapol' tsev, E S [Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk (Russian Federation); Churkin, D S; Demchuk, S V [Novosibirsk State University, Novosibirsk (Russian Federation)

2016-03-31

We report the results of experimentally investigated dependences of temporal, spectral and spatial characteristics of an inductive HF-laser generation on the pump conditions. Gas mixtures H{sub 2} – F{sub 2}(NF{sub 3} or SF6{sub 6}) and He(Ne) – H{sub 2} – F{sub 2}(NF{sub 3} or SF{sub 6}) were used as active media. The FWHM pulse duration reached 0.42 μs. This value corresponded to a pulsed power of 45 kW. For the first time, the emission spectrum of an inductive HF laser was investigated, which consisted of seven groups of bands with centres around the wavelengths of 2732, 2736, 2739, 2835, 2837, 2893 and 2913 nm. The cross section profile of the laser beam was a ring with a diameter of about 20 mm and width of about 5 mm. Parameters of laser operation in the repetitively pulsed regime were sufficiently stable. The amplitude instability of light pulses was no greater than 5% – 6%. (lasers)

Magnetic traps with a sperical separatrix: Tornado traps

International Nuclear Information System (INIS)

Peregood, B.P.; Lehnert, B.

1979-11-01

A review is given on the features of magnetic traps with a spherical separatrix, with special emphesis on Tornado spiral coil configurations. The confinement and heating of static plasmas in Tornado traps is treated, including the topology of the magnetic field structure, the magneto-mechanical properties of the magnetic coil system, as well as the particle orbits and plasma behaviour in these traps. In additio, the mode of rotating plasma operation by crossed electric and magnetic fields is being described. The results of experiments on static and rotating plasmas are summarized, and conclusions are drawn about future possibilities of Tornado traps for the creation and containment of hot plasmas. (author)

Magnetic traps with a spherical separatrix: Tornado traps

International Nuclear Information System (INIS)

Peregood, B.P.; Lehnert, B.

1981-01-01

A review is given on the features of magnetic traps with a spherical separatrix, with special emphasis on Tornado spiral coil configurations. The confinement and heating of static plasms in Tornado traps is treated, including the topology of the magnetic field structure, the magneto-mechanical properties of the magnetic coil system, as well as the particle orbits and plasma behaviour in these traps. In addition, the mode of rotating plasma operation by crossed electric and magnetic fields is described. The results of experiments on static and rotating plasmas are summarized, and conclusions are drawn about future possibilities of Tornado traps in the creation and containment of hot plasmas. (orig.)

Solvent Effects on Nuclear Magnetic Resonance 2J(C,Hf and 1J(C,Hf Spin–Spin Coupling Constants in Acetaldehyde

Directory of Open Access Journals (Sweden)

Angel Esteban

2003-02-01

Full Text Available Abstract: The known solvent dependence of 1J(Cc,Hf and 2J(C1,Hf couplings in acetaldehyde is studied from a theoretical viewpoint based on the density functional theory approach where the dielectric solvent effect is taken into account with the polarizable continuum model. The four terms of scalar couplings, Fermi contact, paramagnetic spin orbital, diamagnetic spin orbital and spin dipolar, are calculated but the solvent effect analysis is restricted to the first term since for both couplings it is by far the dominant contribution. Experimental trends of Δ1J(Cc,Hf and Δ2J(C1,Hf Vs ε (the solvent dielectric constant are correctly reproduced although they are somewhat underestimated. Specific interactions between solute and solvent molecules are studied for dimethylsulfoxide, DMSO, solutions considering two different one-to-one molecular complexes between acetaldehyde and DMSO. They are determined by interactions of type C=O---H---C and S=O---H---C, and the effects of such interactions on 1J(Cc,Hf and 2J(C1,Hf couplings are analyzed. Even though only in a semiquantitative way, it is shown that the effect of such interactions on the solvent effects, of Δ1J(Cc,Hf and Δ2J(C1,Hf, tend to improve the agreement between calculated and experimental values. These results seem to indicate that a continuum dielectric model has not enough flexibility for describing quantitatively solvent effects on spin-spin couplings. Apparently, even for relatively weak hydrogen bonding, the contribution from “direct” interactions is of the same order of magnitude as the “dielectric” effect.

The surface emissions trap: a new approach in indoor air purification.

Science.gov (United States)

Markowicz, Pawel; Larsson, Lennart

2012-11-01

A new device for stopping or reducing potentially irritating or harmful emissions from surfaces indoors is described. The device is a surface emissions trap prototype and consists of an adsorbent sheet with a semipermeable barrier surrounded by two thin nonwoven layers. The trap may be applied directly at the source of the emissions e.g. at moisture-affected floors and walls, surfaces contaminated by chemical spills etc. This results in an immediate stop or reduction of the emitting pollutants. The trap has a very low water vapor resistance thus allowing drying of wet surfaces. In laboratory experiments typically 98% reduction of air concentrations of volatile organic compounds and a virtually total reduction of mold particle-associated mycotoxins was observed. The surface emissions trap may represent a convenient and efficient way of restoring indoor environments polluted by microbial and other moisture-associated emissions. Copyright © 2012 Elsevier B.V. All rights reserved.

Development of an efficient pheromone-based trapping method for the banana root borer Cosmopolites sordidus.

Science.gov (United States)

Reddy, G V P; Cruz, Z T; Guerrero, A

2009-01-01

The banana root borer Cosmopolites sordidus (Germar) (Coleoptera: Curculionidae) is a major pest of bananas throughout the world. Chemical control is both undesirable and expensive, where biological control alternatives are limited, and pheromone-based trapping results in low captures. In this study, several important factors that affect pheromone-based catches, such as trap type, trap dimensions, and color and position of the traps, were optimized. Ground traps were found to be superior to ramp and pitfall traps, and larger traps (40 x 25 cm and above) were more efficient than smaller ones (30 x 15 cm). In a color-choice test, the banana weevil clearly preferred brown traps over yellow, red, gray, blue, black, white, and green, with mahogany being more attractive than other shades of brown. In addition, pheromone baited ground traps positioned in the shade of the canopy caught significantly more adults than those placed in sunlight. Therefore, mahogany-brown ground traps 40 x 25 cm appear to be the most efficient at catching C. sordidus adults and have the greatest potential for use in mass trapping and programs for eradication of this pest.

Investigational research on highly functional carbon and related materials (HF-CRMs); Tansokei kokino zairyo no chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

The paper arranged a fiscal 1997 guiding study of highly functional carbon and related materials (HF-CRMs). In the material invention field, described were the composition by interatomic control technology and the characteristics of pure carbon nanotubes, carbynes, graphite, fullerene polymer, porous carbon, etc. Heteroelement substituted materials were also described. The paper also reported the application of HF-CRMs to the electric/chemical field, and arranged the basement technology and applicability of diamond in particular. The subjects are enhancement of composition technology and reduction of the price of processing technology. Especially, the control of impurities and defects is a must for the electric use. The application of HF-CRMs to the mechanical field was reported. Superlubricant, wear resistant and high temperature corrosion resistant materials were taken up, and were surveyed in terms of their use mostly to refuse incineration power generation boilers, and thermal power generation use turbines. In the development of mechanical materials, technologies were surveyed especially for large area/complex shape film formation to form films for various parts, functionally gradient film formation for relaxation of thermal stress and residual stress in the film, and high speed film formation for quantity production. 363 refs., 88 figs., 10 tabs.

50 CFR 697.19 - Trap limits and trap tag requirements for vessels fishing with lobster traps.

Science.gov (United States)

2010-10-01

... vessels fishing with lobster traps. 697.19 Section 697.19 Wildlife and Fisheries FISHERY CONSERVATION AND... requirements for vessels fishing with lobster traps. (a) Trap limits for vessels fishing or authorized to fish... management area designation certificate or valid limited access American lobster permit specifying one or...

Mixed Messages from Garnet Lu-Hf and Sm-Nd Geochronology

Science.gov (United States)

Vervoort, J. D.; Wang, D.; Johnson, T. A.

2017-12-01

Garnet geochronology provides important information on the timing and conditions of metamorphism. As a major indicator mineral formed during metamorphism, its direct dating can not only help establish the timing of metamorphism, provide the "t" for P-T-t paths, but also, if the dated garnet can be placed in a textural context, can provide information on the timing of deformational features. With advances in chemistry and mass spectrometry, garnet Lu-Hf and Sm-Nd geochronology has become an important geochronological tool and we can now reliably (if not routinely) date a wide variety of garnet compositions formed under diverse conditions. In the course of dating a variety of lithologies using both Lu-Hf and Sm-Nd isotope systems, however, some intriguing results have emerged. Although there are many examples where the Lu-Hf and Sm-Nd systems give the same date within uncertainty, there are also many cases where these systems yield significantly different dates, and the differences between these dates can be considerable—many 10's of Ma of and even 100's of Ma. For example, in garnet-bearing Mesoproterozoic gneisses from across the Blue Ridge Province in Virginia, both Lu-Hf and Sm-Nd analyses (determined on the same solutions) define narrow time spans, but with the Sm-Nd dates systematically younger (for orthogneisses Lu-Hf dates are 1032 to 1019 Ma whereas Sm-Nd dates are 965 to 949 Ma—a difference of 67 to 80 Ma). There are many other examples of systematically younger Sm-Nd garnet dates in both the literature and with our ongoing research. Potential explanations for these differences include: 1) strong partitioning of Lu into garnet during growth yielding ages weighted toward the beginning of growth; 2) faster Lu diffusion from high Lu regions after garnet formation, potentially leading to isochron rotation and anomalously old Lu-Hf dates; and 3) differences in closure temperatures of the two isotope systems. We will review several examples of divergent Lu-Hf

Trapping behaviour of deuterium ions implanted into tungsten simultaneously with carbon ions

International Nuclear Information System (INIS)

Kobayashi, Makoto; Suzuki, Sachiko; Wang, Wanjing; Kurata, Rie; Kida, Katsuya; Oya, Yasuhisa; Okuno, Kenji; Ashikawa, Naoko; Sagara, Akio; Yoshida, Naoaki

2009-01-01

The trapping behaviour of deuterium ions implanted into tungsten simultaneously with carbon ions was investigated by thermal desorption spectroscopy (TDS) and x-ray photoelectron spectroscopy (XPS). The D 2 TDS spectrum consisted of three desorption stages, namely desorption of deuterium trapped by intrinsic defects, ion-induced defects and carbon with the formation of the C-D bond. Although the deuterium retention trapped by intrinsic defects was almost constant, that by ion-induced defects increased as the ion fluence increased. The retention of deuterium with the formation of the C-D bond was saturated at an ion fluence of 0.5x10 22 D + m -2 , where the major process was changed from the sputtering of tungsten with the formation of a W-C mixture to the formation of a C-C layer, and deuterium retention as the C-D bond decreased. It was concluded that the C-C layer would enhance the chemical sputtering of carbon with deuterium with the formation of CD x and the chemical state of carbon would control the deuterium retention in tungsten under C + -D 2 + implantation.

Lu-Hf isotope systematics of fossil biogenic apatite and their effects on geochronology

Science.gov (United States)

Herwartz, Daniel; Münker, Carsten; Tütken, Thomas; Hoffmann, J. Elis; Wittke, Andreas; Barbier, Bruno

2013-01-01

Reliable methods for direct dating of biogenic apatite from pre-Pleistocene fossils are currently not available, and recent attempts using the Lu-Hf decay system yielded highly inaccurate ages for both bones and teeth. The geological processes accounting for this poor accuracy of Lu-Hf chronometry are not yet understood. Here we explore Lu-Hf systematics in fossil bones and teeth in detail, by applying five different sample digestion techniques that are tested on bones and composites of bone and sediment. Our current dataset implies that dissolution methods only slightly affect the resulting Lu-Hf ages, while clear differences between the individual digestion techniques became apparent for element concentrations. By analysing the insoluble leftovers from incomplete sample dissolution, four main reservoirs of Hf in fossil bones were identified: (1) a radiogenic end-member associated with apatite; (2) an unradiogenic end-member represented by the authigenic minerals or the embedding sediment; (3) a highly unradiogenic end-member that can be attributed to detrital zircon; and (4) a moderately soluble phase (probably a Zr(Hf)-phosphate) that yielded very low Lu/Hf but a highly radiogenic Hf isotope composition at the same time. This Zr(Hf)-phase must have been precipitated within the fossil bone sample at a late stage of burial history, thereby incorporating radiogenic 176Hf released from apatite surfaces over geological timescales. A second focus of our study is the effect of different sediment matrices and of crystal size on the preservation of pristine Lu-Hf isotope compositions in bioapatite. Because near-depositional Lu-Hf ages of phosphate fossils have previously been reported for the London Clay (England) and a calcareous marl from Tendaguru (Tanzania), we herein investigate specimens fossilised in carbonate matrices (calcareous marl from Oker, Germany; carbonate concretions from the Santana Formation, Brazil; carbonate from the Eifel, Germany) and argillaceous

Preparation and enhanced oxidation performance of a Hf-doped single-phase Pt-modified aluminide coating

International Nuclear Information System (INIS)

Yang, Y.F.; Jiang, C.Y.; Yao, H.R.; Bao, Z.B.; Zhu, S.L.; Wang, F.H.

2016-01-01

Graphical abstract: Tiny Hf particles were successfully incorporated into Pt plating via simple electro-plating method. The hafnium particles were either nipped at Pt grain boundaries or wrapped inside Pt grains, and most of them were below 3 μm in size, showing a uniform distribution within the Pt plating. - Highlights: • A Hf-rich belt formed between outer (Ni,Pt)Al and IDZ after aluminisation. • Hf-doped coating showed much decreased mass gain and oxidation rate constant k_p. • Hf-rich belt acted as diffusion barrier by restraining diffusions of Al and W. • Degradation of β was effectively postponed by the unique Hf addition. • Hf-doped coating exhibited lighter oxide scale rumpling tendency. - Abstract: A Hf-doped β-(Ni,Pt)Al coating was prepared by co-deposition of a Pt-Hf composite plating and successive aluminisation. Then, a distinct Hf-rich belt was formed internally between the outer additive (Ni,Pt)Al coating and interdiffusion zone. An isothermal oxidation test at 1100 °C revealed a relatively lower oxidation rate constant and decreased oxide scale rumpling tendency for the Hf-doped coating during which the Hf-rich belt partly acted as an effective diffusion barrier. The unique addition of Hf into a β-(Ni,Pt)Al coating can delay the transitional oxidation period from transient alumina to stable one and postpone the degradation from β to γ'.

Results of Time-of-Flight Neutron Capture Measurements of 176,177,178,179 Hf-enriched and nat Hf samples at 10 m, 30 m and 60 m stations of GELINA

International Nuclear Information System (INIS)

Ware, T.C.; Dean, C.J.; Borella, A.; Kopecky, S.; Moens, A.; Schillebeeckx, P.; Janeva, N.; Moxon, M.C.

2014-04-01

Neutron capture measurements have been performed at the time-offlight facility GELINA to determine neutron resonance parameters for 174,176,177,178,179,180 Hf. In total, 16 distinct experiments were conducted at the 12 m, 28 m and 58 m capture stations using C 6 D 6 detectors with a moderated neutron beam and the accelerator operating at 50 Hz or 800 Hz. Measurements were performed with nat Hf metallic samples and oxide samples enriched in 176 Hf, 177 Hf, 178 Hf and 179 Hf. This report describes the experimental details required to deliver the experimental capture yields to the EXFOR data library which is maintained by the Nuclear Energy Agency of the OECD and the Nuclear Data Section of the IAEA. The experimental conditions and data reduction procedures are described. In addition, the full covariance information based on the AGS concept is given, such that resonance parameters together with their covariances can be derived in a least squares adjustment to the data. (author)

Study of UO{sub 2}F{sub 2} - H{sub 2}O - HF compounds; Etude des composes UO{sub 2}F{sub 2} - H{sub 2}O - HF

Energy Technology Data Exchange (ETDEWEB)

Neveu, G [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1961-07-01

We study various compounds resulting from the interaction of UO{sub 2}F{sub 2} with H{sub 2}O and HF (gas), and various triple compounds UO{sub 2}F{sub 2} - H{sub 2}O - HF; the conditions of decomposition and the thermodynamic limits of stability are specified. (author) [French] Nous etudions divers composes formes par reaction de UO{sub 2}F{sub 2} avec H{sub 2}O et HF (gaz) et divers composes triples UO{sub 2}F{sub 2} - H{sub 2}O - HF, en essayant de preciser les decompositions et domaines d'exisfence thermodynamiques de ces corps. (auteur)

Luminescence and scintillation properties of Rb2HfCl6 crystals

International Nuclear Information System (INIS)

Saeki, Keiichiro; Wakai, Yuki; Fujimoto, Yutaka; Koshimizu, Masanori; Asai, Keisuke; Yanagida, Takayuki; Nakauchi, Daisuke

2016-01-01

We developed a scintillator based on a Rb 2 HfCl 6 crystal as a ternary halide crystal with intrinsic luminescence. In the photoluminescence spectra, two emission bands are observed at 383 and 434 nm. The 434 nm emission band for Rb 2 HfCl 6 may be attributed to [HfCl 6 ] 2- complex ion or [ZrCl 6 ] 2- impurity, since the Rb 2 HfCl 6 contained Zr as impurity at 0.62 mol %. The radioluminescence band is observed at 420 nm and can be attributed to the same origin as the photoluminescence band at 434 nm. The scintillation decay-time constants were 0.84 and 5.4 μs. The light yield was estimated to be 24,100 photons/MeV. (author)

Coherent structural trapping through wave packet dispersion during photoinduced spin state switching

DEFF Research Database (Denmark)

Lemke, Henrik T.; Kjær, Kasper Skov; Hartsock, Robert

2017-01-01

The description of ultrafast nonadiabatic chemical dynamics during molecular photo-transformations remains challenging because electronic and nuclear configurations impact each other and cannot be treated independently. Here we gain experimental insights, beyond the Born-Oppenheimer approximation...... is distinguished from the structural trapping dynamics, which launches a coherent oscillating wave packet (265 fs period), clearly identified as molecular breathing. Throughout the structural trapping, the dispersion of the wave packet along the reaction coordinate reveals details of intramolecular vibronic...

Atomic scale engineering of HfO{sub 2}-based dielectrics for future DRAM applications

Energy Technology Data Exchange (ETDEWEB)

Dudek, Piotr

2011-02-14

Modern dielectrics in combination with appropriate metal electrodes have a great potential to solve many difficulties associated with continuing miniaturization process in the microelectronic industry. One significant branch of microelectronics incorporates dynamic random access memory (DRAM) market. The DRAM devices scaled for over 35 years starting from 4 kb density to several Gb nowadays. The scaling process led to the dielectric material thickness reduction, resulting in higher leakage current density, and as a consequence higher power consumption. As a possible solution for this problem, alternative dielectric materials with improved electrical and material science parameters were intensively studied by many research groups. The higher dielectric constant allows the use of physically thicker layers with high capacitance but strongly reduced leakage current density. This work focused on deposition and characterization of thin insulating layers. The material engineering process was based on Si cleanroom compatible HfO{sub 2} thin films deposited on TiN metal electrodes. A combined materials science and dielectric characterization study showed that Ba-added HfO{sub 2} (BaHfO{sub 3}) films and Ti-added BaHfO{sub 3} (BaHf{sub 0.5}Ti{sub 0.5}O{sub 3}) layers are promising candidates for future generation of state-of-the-art DRAMs. In especial a strong increase of the dielectric permittivity k was achieved for thin films of cubic BaHfO{sub 3} (k{proportional_to}38) and BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} (k{proportional_to}90) with respect to monoclinic HfO{sub 2} (k{proportional_to}19). Meanwhile the CET values scaled down to 1 nm for BaHfO{sub 3} and {proportional_to}0.8 nm for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3} with respect to HfO{sub 2} (CET=1.5 nm). The Hf{sup 4+} ions substitution in BaHfO{sub 3} by Ti{sup 4+} ions led to a significant decrease of thermal budget from 900 C for BaHfO{sub 3} to 700 C for BaHf{sub 0.5}Ti{sub 0.5}O{sub 3}. Future studies need to focus

Helium implanted AlHf as studied by 181 Ta TDPAC

Indian Academy of Sciences (India)

Measurements on helium implanted sample indicate the binding of helium associated defects by Hf solute clusters. Isochronal annealing measurements indicate the dissociation of the helium implantation induced defects from Hf solute clusters for annealing treatments beyond 650 K. On comparison of the present results ...

Cryogenic surface ion traps

International Nuclear Information System (INIS)

Niedermayr, M.

2015-01-01

Microfabricated surface traps are a promising architecture to realize a scalable quantum computer based on trapped ions. In principle, hundreds or thousands of surface traps can be located on a single substrate in order to provide large arrays of interacting ions. To this end, trap designs and fabrication methods are required that provide scalable, stable and reproducible ion traps. This work presents a novel surface-trap design developed for cryogenic applications. Intrinsic silicon is used as the substrate material of the traps. The well-developed microfabrication and structuring methods of silicon are utilized to create simple and reproducible traps. The traps were tested and characterized in a cryogenic setup. Ions could be trapped and their life time and motional heating were investigated. Long ion lifetimes of several hours were observed and the measured heating rates were reproducibly low at around 1 phonon per second at a trap frequency of 1 MHz. (author) [de

Artificial covering on trap nests improves the colonization of trap-nesting wasps

OpenAIRE

Taki, Hisatomo; Kevan, Peter G.; Viana, Blandina Felipe; Silva, Fabiana O.; Buck, Matthias

2008-01-01

Acesso restrito: Texto completo. p. 225-229 To evaluate the role that a trap-nest cover might have on sampling methodologies, the abundance of each species of trap-nesting Hymenoptera and the parasitism rate in a Canadian forest were compared between artificially covered and uncovered traps. Of trap tubes exposed at eight forest sites in six trap-nest boxes, 531 trap tubes were occupied and 1216 individuals of 12 wasp species of four predatory families, Vespidae (Eumeninae), Crabronidae...

Discriminating between antihydrogen and mirror-trapped antiprotons in a minimum-B trap

CERN Document Server

Amole, C; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Kurchaninov, L; Jonsell, S; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Robicheaux, F; Sarid, E; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S

2012-01-01

Recently, antihydrogen atoms were trapped at CERN in a magnetic minimum (minimum-B) trap formed by superconducting octupole and mirror magnet coils. The trapped antiatoms were detected by rapidly turning off these magnets, thereby eliminating the magnetic minimum and releasing any antiatoms contained in the trap. Once released, these antiatoms quickly hit the trap wall, whereupon the positrons and antiprotons in the antiatoms annihilated. The antiproton annihilations produce easily detected signals; we used these signals to prove that we trapped antihydrogen. However, our technique could be confounded by mirror-trapped antiprotons, which would produce seemingly-identical annihilation signals upon hitting the trap wall. In this paper, we discuss possible sources of mirror-trapped antiprotons and show that antihydrogen and antiprotons can be readily distinguished, often with the aid of applied electric fields, by analyzing the annihilation locations and times. We further discuss the general properties of antipr...

Evolution of the mantle source in an evolving arc-backarc system (Torres del Paine, Patagonia): Evidence from Hf isotopes in zircon

Science.gov (United States)

Ewing, T. A.; Muntener, O.; Leuthold, J.; Baumgartner, L. P.; Putlitz, B.; d'Abzac, F. X.; Chiaradia, M.

2015-12-01

The Miocene Torres del Paine intrusive complex (TPIC) in Patagonia is a transitional alkaline backarc intrusion1 emplaced on short timescales of 162 ± 11 ka2. It is subdivided into two units with distinct ages of ~12.6 Ma and ~12.45 Ma1. Smaller intrusive bodies in the area record a change in chemistry from calc-alkaline at ~16 Ma, to transitional alkaline at ~12.5 Ma. Zircons from ~16 Ma intrusives and the 12.6 Ma part of the TPIC have remarkably consistent, slightly enriched Hf isotope compositions with ɛHf(i) of -1 to +2. An abrupt shift towards more juvenile Hf isotope compositions is observed in the ~12.45 Ma part of the TPIC, with ɛHf(i) of +3 to +6. Bulk rock Nd and Sr isotopes for the TPIC show the same shift towards more juvenile compositions at this time1. The long-term consistency of ɛHf(i) from 16 to 12.6 Ma is surprising, given that in the same period the bulk rock chemistry changes from calc-alkaline to transitional alkaline. Conversely, the major shift in ɛHf(i) is not correlated with any change in bulk rock chemistry, which remains transitional alkaline from 12.6 to 12.45 Ma. The decoupling of major element chemical evolution and Hf isotope signatures suggests that the subsequent rapid influx of juvenile material recorded by our Hf isotope data must have occurred by renewed mantle melting. Subduction of the Chile ridge at ~12.5 Ma in this area caused arc magmatism to move westwards and back-arc extension to initiate. We propose that the first TPIC magmas (12.6 Ma) came from a mantle wedge with a residual subduction signature. Subsequent melting of more juvenile mantle, less contaminated by a subduction component, generated the 12.45 Ma TPIC magmas. These results demonstrate that magmatic complexes such as the TPIC may tap distinct mantle sources even on very short timescales, fingerprinting arc-backarc transition processes. 1Leuthold et al., 2013, JPET, 54: 273-303 2Leuthold et al., 2012, EPSL, 325: 85-92

Optical trapping and Raman spectroscopy of solid particles.

Science.gov (United States)

Rkiouak, L; Tang, M J; Camp, J C J; McGregor, J; Watson, I M; Cox, R A; Kalberer, M; Ward, A D; Pope, F D

2014-06-21

The heterogeneous interactions of gas molecules on solid particles are crucial in many areas of science, engineering and technology. Such interactions play a critical role in atmospheric chemistry and in heterogeneous catalysis, a key technology in the energy and chemical industries. Investigating heterogeneous interactions upon single levitated particles can provide significant insight into these important processes. Various methodologies exist for levitating micron sized particles including: optical, electrical and acoustic techniques. Prior to this study, the optical levitation of solid micron scale particles has proved difficult to achieve over timescales relevant to the above applications. In this work, a new vertically configured counter propagating dual beam optical trap was optimized to levitate a range of solid particles in air. Silica (SiO2), α-alumina (Al2O3), titania (TiO2) and polystyrene were stably trapped with a high trapping efficiency (Q = 0.42). The longest stable trapping experiment was conducted continuously for 24 hours, and there are no obvious constraints on trapping time beyond this period. Therefore, the methodology described in this paper should be of major benefit to various research communities. The strength of the new technique is demonstrated by the simultaneous levitation and spectroscopic interrogation of silica particles by Raman spectroscopy. In particular, the adsorption of water upon silica was investigated under controlled relative humidity environments. Furthermore, the collision and coagulation behaviour of silica particles with microdroplets of sulphuric acid was followed using both optical imaging and Raman spectroscopy.

Stable Trapping of Multielectron Helium Bubbles in a Paul Trap

Science.gov (United States)

Joseph, E. M.; Vadakkumbatt, V.; Pal, A.; Ghosh, A.

2017-06-01

In a recent experiment, we have used a linear Paul trap to store and study multielectron bubbles (MEBs) in liquid helium. MEBs have a charge-to-mass ratio (between 10^{-4} and 10^{-2} C/kg) which is several orders of magnitude smaller than ions (between 10^6 and 10^8 C/kg) studied in traditional ion traps. In addition, MEBs experience significant drag force while moving through the liquid. As a result, the experimental parameters for stable trapping of MEBs, such as magnitude and frequency of the applied electric fields, are very different from those used in typical ion trap experiments. The purpose of this paper is to model the motion of MEBs inside a linear Paul trap in liquid helium, determine the range of working parameters of the trap, and compare the results with experiments.

Influence of O2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

International Nuclear Information System (INIS)

Ganapathi, Kolla Lakshmi; Bhat, Navakanta; Mohan, Sangeneni

2014-01-01

HfO 2  thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O 2  flow rate, during evaporation is optimized for 35 nm thick HfO 2  films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O 2  flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O 2  flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO 2  films deposited at two O 2  flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO 2  film deposited at 3 SCCM O 2  flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices. (paper)

Theoretical study of the mode of the mass-selective nonstable axial output ions from the nonlinear trap

International Nuclear Information System (INIS)

Sudakov, M.Yu.

2000-01-01

One studied theoretically the mode of mass-selective unstable output of ions from three-dimensional quadrupole ion trap. One developed a method represent coordinates of ions per one period of supplying HF voltage with regard to nonlinear distortions of quadrupole potential. One derived equation for an envelope of ion oscillations in the form of motion equation of mass point in the efficient force field. One explained the effect of output delay of ions at presence of the field negative even harmonics. One proved that the positive even distortions of quadrupole potential favored realization of that mode and studied the dynamics of ions in the course of output [ru

Oxidation behavior of laser-clad NiAlCrHf alloys

International Nuclear Information System (INIS)

Ribaudo, C.R.

1991-01-01

Laser cladding is the process where a mechanical mixture of powders is rapidly melted and fused to a solid substrate using a CO 2 laser. The effects of laser cladding upon scale retention on NiAlCrHf alloys after cyclic and isothermal exposure to air were investigated. The stress developed in the scale during cooling after exposure was estimated using a thermoelastic model. Additions of up to ∼2 1/2 wt % Hf increasingly promote retention of scales grown at 1,200C. Laser-clad samples containing ∼2 1/2 wt % Hf retained almost-intact scales. The improvement in scale retention is due to improved toughness in scales containing hafnia-rich polycrystallites possibly via microcracking initiated by anisotropic thermal contraction of the hafnia. Laser cladding provides a large concentration of ∼1 μm Hf-rich particles that are precursors of the hafnia in the scale as well as a fine-dendrite spacing that reduced the mean free distance between particles

HF-induced airglow at magnetic zenith: theoretical considerations

Directory of Open Access Journals (Sweden)

E. V. Mishin

2005-01-01

Full Text Available Observations of airglow at 630nm (red line and 557.7nm (green line during HF modification experiments at the High Frequency Active Auroral Research Program (HAARP heating facility are analyzed. We propose a theoretical framework for understanding the generation of Langmuir and ion acoustic waves during magnetic zenith injections. We show that observations of HF-induced airglow in an underdense ionosphere as well as a decrease in the height of the emitting volume are consistent with this scenario.

Investigation of Chemical Equilibrium Kinetics by the Electromigration Method

CERN Document Server

Bozhikov, G A; Bontchev, G D; Maslov, O D; Milanov, M V; Dmitriev, S N

2002-01-01

Measurement of the chemical reaction rates for complex formation as well as hydrolysis type reactions by the method of horizontal zone electrophoresis is outlined. The correlation between chemical equilibrium kinetics and electrodiffusion processes in a constant d.c. electric field is described. In model electromigration experiments the reaction rate constant of the complex formation of Hf(IV) and DTPA is determined.

Synthesis and evaluation of MgF2 coatings by chemical conversion on magnesium alloys for producing biodegradable orthopedic implants of temporary use

International Nuclear Information System (INIS)

Casanova, P Y; Jaimes, K J; Parada, N J; Viejo, F; Hernández-Barrios, C A; Aparicio, M; Coy, A E

2013-01-01

The aim of the present work was the synthesis of biodegradable MgF 2 coatings by chemical conversion on the commercial Elektron 21 and AZ91D magnesium alloys, in aqueous HF solutions for different concentrations and temperatures. The chemical composition and morphology of the coatings were analyzed by scanning electron microscopy (SEM-EDX) and X-ray diffraction (XRD). On the other hand, their corrosion behavior was evaluated by gravimetric and electrochemical measurements in Hank's solution at 37°C for different immersion times. The experimental results revealed that chemical conversion in HF produced MgF 2 coatings which corrosion resistance was enhanced by increasing the HF concentration. Further, the microstructure and composition of the base alloy played a key role on the growth and degradation mechanisms of the MgF 2 coatings

Interacciones hiperfinas en BaxSr1-xHfO3

Directory of Open Access Journals (Sweden)

López García, A.

1999-10-01

Full Text Available In order to determine the microscopic role of cation A in ABO3 perovskites the hyperfine interaction in the Sr1-xBaxHfO3 system using Perturbed Angular Correlation spectroscopy (PAC is studied. As a previous result the compositions x = 0.50 and 0.25 are shown. The PAC spectra were obtained in the temperature range from 20 to 1000ºC. In both compounds a phase transition to higher symmetry structure was observed at T≈400 and 200ºC, respectively. This structure is proposed to be cubic in both compositions. The results are compared with those obtained in SrHfO3 and BaHfO3.Con el fin de determinar el papel microscópico que juega el catión A en las perovskitas ABO3 se estudia la interacción hiperfina el sistema Sr1-xBaxHfO3 usando la espectroscopia Correlaciones Angulares Perturbadas (PAC en función de la temperatura y la composición. Como resultado previo se muestra en este trabajo, el estudio de las composiciones x = 0.5 y 0.75. Las medidas PAC se realizaron en el intervalo de temperaturas que va desde 20 a 1000ºC. Para x=0.50 y 0.75 se determinó una transición a una fase de mayor simetría a T≈400 y 200ºC, respectivamente. Se propone que esta fase de mayor simetría es cúbica en ambas composiciones. Los resultados obtenidos son comparados con los compuestos puros SrHfO3 y BaHfO3.

HF Parameters of Induction Motor

Directory of Open Access Journals (Sweden)

M. N. Benallal

2017-09-01

Full Text Available This article describes the results of experimental studies of HF input and primary parameters. A simulation model in Matlab SimulinkTM of multiphase windings as ladder circuit of coils is developed. A method for determining the primary parameters of ladder equivalent circuits is presented.

European coordination for coastal HF radar data in EMODnet Physics

Science.gov (United States)

Mader, Julien; Novellino, Antonio; Gorringe, Patrick; Griffa, Annalisa; Schulz-Stellenfleth, Johannes; Montero, Pedro; Montovani, Carlo; Ayensa, Garbi; Vila, Begoña; Rubio, Anna; Sagarminaga, Yolanda

2015-04-01

Historically, joint effort has been put on observing open ocean, organizing, homogenizing, sharing and reinforcing the impact of the acquired information based on one technology: ARGO with profilers Argo floats, EuroSites, ESONET-NoE, FixO3 for deep water platforms, Ferrybox for stations in ships of opportunities, and GROOM for the more recent gliders. This kind of networking creates synergies and makes easier the implementation of this source of data in the European Data exchange services like EMODnet, ROOSs portals, or any applied services in the Blue economy. One main targeted improvement in the second phase of EMODnet projects is the assembling of data along coastline. In that sense, further coordination is recommended between platform operators around a specific technology in order to make easier the implementation of the data in the platforms (4th EuroGOOS DATAMEQ WG). HF radar is today recognized internationally as a cost-effective solution to provide high spatial and temporal resolution current maps (depending on the instrument operation frequency, covering from a few kilometres offshore up to 200 km) that are needed for many applications for issues related to ocean surface drift or sea state characterization. Significant heterogeneity still exists in Europe concerning technological configurations, data processing, quality standards and data availability. This makes more difficult the development of a significant network for achieving the needed accessibility to HF Radar data for a pan European use. EuroGOOS took the initiative to lead and coordinate activities within the various observation platforms by establishing a number of Ocean Observing Task Teams such as HF-Radars. The purpose is to coordinate and join the technological, scientific and operational HF radar communities at European level. The goal of the group is on the harmonization of systems requirements, systems design, data quality, improvement and proof of the readiness and standardization of

Densification and properties of HfB2 based materials

International Nuclear Information System (INIS)

Sonber, J.K.; Ch Murthy, T.S.R.; Bedse, R.D.; Subramanian, C.; Kumar, Sunil; Fotedar, R.K.; Krishnamurthy, N.; Suri, A.K.

2011-01-01

This paper presents the results of investigation carried out on densification and properties of HfB 2 based materials. Densification study of HfB 2 with and without sinter additive was carried out by hot pressing. TiSi 2 and CrSi 2 were used as sinter additive. Monolithic HfB 2 was densified to only 80%ρ th at 1850 deg C with a pressure of 35 MPa. Addition of 10 wt% TiSi 2 resulted in a density of 95% TD at a relatively low temperature of 1650 deg C and a low pressure of 20 MPa. Addition of 10% CrSi 2 resulted in a density of 99% TD at the same operating conditions. All the samples were characterized by SEM/EDS and mechanical property measurement. (author)

C-V analysis at variable frequency of MOS structures with different gates, containing Hf-Doped Ta2O5

International Nuclear Information System (INIS)

Stojanovska-Georgievska, L.; Novkovski, N.; Atanassova, E.

2012-01-01

The quality of the interface between the insulating layer and the Si substrate in contemporary submicron MOS technology is a critical issue for device functioning. It is characterized through the electrically active defect centers, known as interface states. Their response to the frequency is discussed here, by analyzing capacitance-voltage and conductance-voltage curves. The C-V method is preferred in many cases, since it offers easy measurement, and it is applied to extract information about interface traps and fixed oxide charge, at different frequencies. This technique, related with frequency dependent G-V measurements, can be very useful in characterizing charge trapped in the dielectric and at the interface with Si. By extracting the value of frequency dependent flat band voltage, we have obtained the fixed oxide charges at flat band condition. A comparison between the results obtained by two different methods is made. The samples that are studied are metal-insulator-semiconductor (MIS) structures that include high-k dielectric as insulating layer (Hf doped Ta 2 O 5 ), with thickness of 8 nm, with different metal used as gate electrode. Here the influence of the top electrode on the generation and behavior of the traps in the oxide layer is discussed. The results show that the value of metal work function of the gate material is an issue that should be considered very carefully, especially in the case of high work function metal gates, when generation of extra positive charge than in the case of other metals is observed. (Author)

Sr-Nd-Hf isotopic fingerprinting of transatlantic dust derived from North Africa

Science.gov (United States)

Zhao, Wancang; Balsam, William; Williams, Earle; Long, Xiaoyong; Ji, Junfeng

2018-03-01

Long-range transport of African dust plays an important role in understanding dust-climate relationships including dust source areas, dust pathways and associated atmospheric and/or oceanic processes. Clay-sized Sr-Nd-Hf isotopic compositions can be used as geochemical fingerprints to constrain dust provenance and the pathways of long-range transported mineral dust. We investigated the clay-sized Sr-Nd-Hf isotopic composition of surface samples along four transects bordering the Sahara Desert. The transects are from Mali, Niger/Benin/Togo, Egypt and Morocco. Our results show that the Mali transect on the West African Craton (WAC) produces lower εNd (εNd-mean = -16.38) and εHf (εHf-mean = -9.59) values than the other three transects. The Egyptian transect exhibits the lowest 87Sr/86Sr ratios (87Sr/86Srmean = 0.709842), the highest εHf (εHf-mean = -0.34) and εNd values of the four transects. Comparison of the clay-sized Sr-Nd-Hf isotopic values from our North African samples to transatlantic African dust collected in Barbados demonstrates that the dust's provenance is primarily the western Sahel and Sahara as well as the central Sahel. Summer emission dust is derived mainly from the western Sahel and Sahara regions. The source of transatlantic dust in spring and autumn is more varied than in the summer and includes dust not only from western areas, but also south central areas. Comparison of the Sr-Nd-Hf isotopic fingerprints between the source and sink of transatlantic dust also suggests that a northwestward shift in dust source occurs from the winter, through the spring and into the summer. The isotopic data we develop here provide another tool for discriminating changes in dust archives resulting from paleoenvironmental evolution of source regions.

Temporal evolution of the HF-enhanced plasma line in sporadic E

International Nuclear Information System (INIS)

Djuth, F.T.; Gonzales, C.A.

1988-01-01

The high-power, high-frequency (HF) facility at Arecibo, Puerto Rico, has been used to study the excitation of Langmuir waves in mid-latitude sporadic E. Measurements of the temporal evolution of so-called HF-enhanced plasma line (HFPL) were made using the Arecibo 430-MHz radar. After HF turn-on in the plasma the HFPL exhibits a rapid growth phase followed by a quick overshoot. During periods of strong HFPL excitation the e-folding growth time of the HFPL power is typically approx-lt 20 μs, and the total overshoot period is ∼1 ms. On the basis of the current observations, mode conversion of the HF wave into Langmuir waves near HF reflection appears to be a promising mechanism for the production of Langmuir waves in sporadic E. Caviton formation at the critical layer is expected to accompany this process, and there is some evidence that the 430-MHz radar is probing the plasma in a region where density cavities of this nature form. While no specific explanation is offered for the HFPL overshoot, it appears that this phenomenon is fundamental to the Langmuir wave excitation process

Precision Measurement of the Electron's Electric Dipole Moment Using Trapped Molecular Ions

Science.gov (United States)

Cairncross, William B.; Gresh, Daniel N.; Grau, Matt; Cossel, Kevin C.; Roussy, Tanya S.; Ni, Yiqi; Zhou, Yan; Ye, Jun; Cornell, Eric A.

2017-10-01

We describe the first precision measurement of the electron's electric dipole moment (de) using trapped molecular ions, demonstrating the application of spin interrogation times over 700 ms to achieve high sensitivity and stringent rejection of systematic errors. Through electron spin resonance spectroscopy on 180Hf 19F+ in its metastable 3Δ1 electronic state, we obtain de=(0.9 ±7. 7stat±1. 7syst)×10-29 e cm , resulting in an upper bound of |de|<1.3 ×10-28 e cm (90% confidence). Our result provides independent confirmation of the current upper bound of |de|<9.4 ×10-29 e cm [J. Baron et al., New J. Phys. 19, 073029 (2017), 10.1088/1367-2630/aa708e], and offers the potential to improve on this limit in the near future.

Investigation of the 168Hf electron capture decay using fast radiochemical separation

International Nuclear Information System (INIS)

Trubert, D.; Hussonnois, M.; Brillard, L.; Barci, V.; Ardisson, G.; Szeglowski, Z.; Constantinescu, O.

1995-01-01

The (EC + β + ) decay of 168 Hf, produced by the 156 Gd ( 16 O,4n) reaction, has been studied, with high efficiency HPGe coaxial detectors, using on-line measurements carried out with the RACHEL setup, built to investigate the chemical properties of transactinide elements. Off-line measurements were also carried out using catcher collection technique. Energies and intensities of 119 γ-lines are reported among which only two were known in the earlier study of Chu and Reednick. The 168 Lu level scheme built on the basis of single and γ-γ coincidence measurements, allows the interpretation of more than 79 γ-transitions, between 38 excited states reported for the first time. (orig.)

Materials Processing Routes to Trap-Free Halide Perovskites

KAUST Repository

Buin, Andrei

2014-11-12

© 2014 American Chemical Society. Photovoltaic devices based on lead iodide perovskite films have seen rapid advancements, recently achieving an impressive 17.9% certified solar power conversion efficiency. Reports have consistently emphasized that the specific choice of growth conditions and chemical precursors is central to achieving superior performance from these materials; yet the roles and mechanisms underlying the selection of materials processing route is poorly understood. Here we show that films grown under iodine-rich conditions are prone to a high density of deep electronic traps (recombination centers), while the use of a chloride precursor avoids the formation of key defects (Pb atom substituted by I) responsible for short diffusion lengths and poor photovoltaic performance. Furthermore, the lowest-energy surfaces of perovskite crystals are found to be entirely trap-free, preserving both electron and hole delocalization to a remarkable degree, helping to account for explaining the success of polycrystalline perovskite films. We construct perovskite films from I-poor conditions using a lead acetate precursor, and our measurement of a long (600 ± 40 nm) diffusion length confirms this new picture of the importance of growth conditions.

Characteristics of trapped electrons and electron traps in single crystals

International Nuclear Information System (INIS)

Budzinski, E.E.; Potter, W.R.; Potienko, G.; Box, H.C.

1979-01-01

Two additional carbohydrates are reported whose crystal structures trap electrons intermolecularly in single crystals x irradiated at low temperature, namely sucrose and rhamnose. Five carbohydrate and polyhydroxy compounds are now known which exhibit this phenomenon. The following characteristics of the phenomenon were investigated: (1) the hyperfine couplings of the electron with protons of the polarized hydroxy groups forming the trap; (2) the distances between these protons and the trapped electron; (3) the spin density of the electron at the protons and (4) the relative stabilities of the electron trapped in various crystal structures

Interactions among Carbon Dioxide, Heat, and Chemical Lures in Attracting the Bed Bug, Cimex lectularius L. (Hemiptera: Cimicidae

Directory of Open Access Journals (Sweden)

Narinderpal Singh

2012-01-01

Full Text Available Commercial bed bug (Cimex lectularius L. monitors incorporating carbon dioxide (CO2, heat, and chemical lures are being used for detecting bed bugs; however, there are few reported studies on the effectiveness of chemical lures in bed bug monitors and the interactions among chemical lure, CO2, and heat. We screened 12 chemicals for their attraction to bed bugs and evaluated interactions among chemical lures, CO2, and heat. The chemical lure mixture consisting of nonanal, 1-octen-3-ol, spearmint oil, and coriander Egyptian oil was found to be most attractive to bed bugs and significantly increased the trap catches in laboratory bioassays. Adding this chemical lure mixture when CO2 was present increased the trap catches compared with traps baited with CO2 alone, whereas adding heat did not significantly increase trap catches when CO2 was present. Results suggest a combination of chemical lure and CO2 is essential for designing effective bed bug monitors.

Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

Directory of Open Access Journals (Sweden)

Kyosuke Seya

2015-01-01

Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

In Situ Raman Spectroscopy of COOH-Functionalized SWCNTs Trapped with Optoelectronic Tweezers

Directory of Open Access Journals (Sweden)

Peter J. Pauzauskie

2012-01-01

Full Text Available Optoelectronic tweezers (OETs were used to trap and deposit aqueous dispersions of carboxylic-acid-functionalized single-walled carbon nanotube bundles. Dark-field video microscopy was used to visualize the dynamics of the bundles both with and without virtual electrodes, showing rapid accumulation of carbon nanotubes when optical virtual electrodes are actuated. Raman microscopy was used to probe SWCNT materials following deposition onto metallic fiducial markers as well as during trapping. The local carbon nanotube concentration was observed to increase rapidly during trapping by more than an order of magnitude in less than one second due to localized optical dielectrophoresis forces. This combination of enrichment and spectroscopy with a single laser spot suggests a broad range of applications in physical, chemical, and biological sciences.

Design for human factors (DfHF): a grounded theory for integrating human factors into production design processes.

Science.gov (United States)

Village, Judy; Searcy, Cory; Salustri, Filipo; Patrick Neumann, W

2015-01-01

The 'design for human factors' grounded theory explains 'how' human factors (HF) went from a reactive, after-injury programme in safety, to being proactively integrated into each step of the production design process. In this longitudinal case study collaboration with engineers and HF Specialists in a large electronics manufacturer, qualitative data (e.g. meetings, interviews, observations and reflections) were analysed using a grounded theory methodology. The central tenet in the theory is that when HF Specialists acclimated to the engineering process, language and tools, and strategically aligned HF to the design and business goals of the organisation, HF became a means to improve business performance. This led to engineers 'pulling' HF Specialists onto their team. HF targets were adopted into engineering tools to communicate HF concerns quantitatively, drive continuous improvement, visibly demonstrate change and lead to benchmarking. Senior management held engineers accountable for HF as a key performance indicator, thus integrating HF into the production design process. Practitioner Summary: Research and practice lack explanations about how HF can be integrated early in design of production systems. This three-year case study and the theory derived demonstrate how ergonomists changed their focus to align with design and business goals to integrate HF into the design process.

EURObservational Research Programme: the Heart Failure Pilot Survey (ESC-HF Pilot)

DEFF Research Database (Denmark)

Maggioni, Aldo P; Dahlström, Ulf; Filippatos, Gerasimos

2010-01-01

The primary objective of the new ESC-HF Pilot Survey was to describe the clinical epidemiology of outpatients and inpatients with heart failure (HF) and the diagnostic/therapeutic processes applied across 12 participating European countries. This pilot study was specifically aimed at validating...

Preparation and study of the critical-mass-free plutonium ceramics with neutron poisons Hf, Gd and Li

International Nuclear Information System (INIS)

Timoefeeva, L.F.; Orlov, V.K.; Malyukov, E.E.; Molomin, V.I.; Zhmak, V.A.; Semova, E.A.; Shishkov, N.V.; Nadykto, B.A.

2002-01-01

Powder sintering was used to produce homogeneous type oxide ceramics of Pu with Hf, Gd and Li 6 . In all the ceramics, there is the number of neutron poison (Hf, Gd and Li) atoms per plutonium atom needed, according to the physical calculation, for them to be free of critical mass. PuO 2 stabilizers high-temperature modifications of cubic HfO 2 or hexagonal Gd 2 O 3 , however, at the ratio given by the physical calculation, the plutonium is insufficient for their full stabilization. Addition of yttrium oxide as an additive stabilizing the fcc phase of HfO 2 resulted in cubic solid solution (Pu, Hf, Y)O 2-x . Pu/Li/Hf and Pu/Li/Si ceramics produced by sintering of PuO 2 and compound Li 2 HfO 3 or 6 Li 4 SiO 4 powders is characterized with presence of two phases. The method of differential thermal analysis demonstrated the phase stability of (Pu-Hf, Pu-Gd, Pu-Li-Hf) oxide ceramics in the 20-1500degC temperature range. Ceramic (Pu/Li/Si) has several endothermal effects. Tests in boiling water solutions of various composition suggest that the specimens of Pu, Hf oxides and ternary oxides (Pu, Hf, Y)O 2 are less stable in weakly acidic media than in weakly alkaline medium and distilled water. The obtained results were used as a basis to estimate the assumed solid solution region boundaries for binary Hf, Pu and ternary Hf, Pu, Y oxides on the side of HfO 2 . (author)

Mechanical properties of ultra-thin HfO2 films studied by nano scratches tests

International Nuclear Information System (INIS)

Fu, Wei-En; Chang, Yong-Qing; Chang, Chia-Wei; Yao, Chih-Kai; Liao, Jiunn-Der

2013-01-01

10-nm-thick atomic layer deposited HfO 2 films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi x O y induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi x O y with increasing annealing temperatures. The existence of HfSi x O y broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi x O y induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO 2 films were assessed by nano-scratch and indentation. ► Scratch depth of HfO 2 films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO 2 films increased with the increase of annealing temperatures

Characterization of deep wet etching of fused silica glass for single cell and optical sensor deposition

International Nuclear Information System (INIS)

Zhu, Haixin; Holl, Mark; Ray, Tathagata; Bhushan, Shivani; Meldrum, Deirdre R

2009-01-01

The development of a high-throughput single-cell metabolic rate monitoring system relies on the use of transparent substrate material for a single cell-trapping platform. The high optical transparency, high chemical resistance, improved surface quality and compatibility with the silicon micromachining process of fused silica make it very attractive and desirable for this application. In this paper, we report the results from the development and characterization of a hydrofluoric acid (HF) based deep wet-etch process on fused silica. The pin holes and notching defects of various single-coated masking layers during the etching are characterized and the most suitable masking materials are identified for different etch depths. The dependence of the average etch rate and surface roughness on the etch depth, impurity concentration and HF composition are also examined. The resulting undercut from the deep HF etch using various masking materials is also investigated. The developed and characterized process techniques have been successfully implemented in the fabrication of micro-well arrays for single cell trapping and sensor deposition. Up to 60 µm deep micro-wells have been etched in a fused silica substrate with over 90% process yield and repeatability. To our knowledge, such etch depth has never been achieved in a fused silica substrate by using a non-diluted HF etchant and a single-coated masking layer at room temperature

Efficacy of female attractant trapping systems for medfly for use in suppression programmes

International Nuclear Information System (INIS)

Seewooruthun, S.I.; Permalloo, S.; Sookar, P.

1999-01-01

Several species of fruit flies cause serious losses to fleshy fruits in Mauritius. Due to fruit production being confined mainly to backyard gardens, traditional methods of control do not give satisfactory results. Full cover sprays with chemicals also pose potential environmental and health risks. Alternative control methods were developed and an area-wide control programme was conceived, using bait application to bring down fruit fly population, followed by intensive trapping of males, using pheromones, to keep the population at low levels. An effective attractant system for mass trapping of females integrated into the wide area programme would greatly enhance control. The use of synthetic food-based attractants for trapping Ceratitis capitata and other fruit fly species was investigated in two phases and compared with different trapping systems. In the Phase III experiments, a two component lure, ammonium acetate + putrescine (FA-2) and a three component lure, ammonium acetate + putrescine + trimethylamine (FA-3) were tested in different traps and compared with standard liquid protein-baited International Pheromone's McPhail Trap (IPMT). Frutect trap, Tephri-trap and Jackson trap with Trimedlure were also used. The medfly female catch with the FA-3 lure used in the Open Bottom Dry Trap outnumbered the catches in other traps. In Phase IV, the final year of the trial, the FA-3 lure was tested in wet and dry IPMT and Tephri traps. These were compared with IPMT containing NuLure + borax (NU+B) as standard and with locally developed traps. The FA-3 lure gave the highest catches of female medflies in the IPMT with water as retaining device followed by IPMT with DDVP, although catches were not significantly different from IPMT with NU+B. (author)

Comparing LCZ696 with enalapril according to baseline risk using the MAGGIC and EMPHASIS-HF risk scores: an analysis of mortality and morbidity in PARADIGM-HF.

Science.gov (United States)

Simpson, Joanne; Jhund, Pardeep S; Silva Cardoso, Jose; Martinez, Felipe; Mosterd, Arend; Ramires, Felix; Rizkala, Adel R; Senni, Michele; Squire, Iain; Gong, Jianjian; Lefkowitz, Martin P; Shi, Victor C; Desai, Akshay S; Rouleau, Jean L; Swedberg, Karl; Zile, Michael R; McMurray, John J V; Packer, Milton; Solomon, Scott D

2015-11-10

Although most patients in the PARADIGM-HF (Prospective Comparison of ARNI With ACEI to Determine Impact on Global Mortality and Morbidity in Heart Failure) trial had mild symptoms, there is a poor correlation between reported functional limitation and prognosis in heart failure. The aim of this study was to examine the spectrum of risk in PARADIGM-HF and the effect of LCZ696 across that spectrum. This study analyzed rates of the primary composite outcome of cardiovascular death or heart failure hospitalization, its components, and all-cause mortality using the MAGGIC (Meta-Analysis Global Group in Chronic Heart Failure) and EMPHASIS-HF (Eplerenone in Mild Patients Hospitalization and Survival Study in Heart Failure) risk scores to categorize patients. The authors determined whether risk, on the basis of these scores, modified the treatment effect of LCZ696. The complete MAGGIC risk score was available for 8,375 of the 8,399 patients in PARADIGM-HF. The median MAGGIC score was 20 (IQR: 16 to 24). An increase of 1 point was associated with a 6% increased risk for the primary endpoint (p PARADIGM-HF patients had mild symptoms, many were at high risk for adverse outcomes and obtained a large absolute benefit from LCZ696, compared with enalapril, over a relatively short treatment period. LCZ696's benefit was consistent across the spectrum of risk. (PARADIGM-HF trial [Prospective Comparison of ARNI With ACEI to Determine Impact on Global Mortality and Morbidity in Heart Failure]; NCT01035255). Copyright © 2015 American College of Cardiology Foundation. Published by Elsevier Inc. All rights reserved.

Application of multisorbent traps to characterization and quantification of workplace exposure source terms

International Nuclear Information System (INIS)

Dindal, A.B.; Ma, Cheng-Yu; Jenkins, R.A.; Higgins, C.E.; Skeen, J.T.; Bayne, C.K.

1995-01-01

Multisorbent traps have been used for several years to characterize complex atmospheres. Only more recently have multisorbent traps been used for quantitative analysis. The traps provide an effective method for retaining a wide range of airborne Organic contaminants, since these carbonaceous sorbents are relatively hydrophobic, have large surface areas, do not have active functional groups, and have fewer chemical artifacts than other sorbents. Multisorbent traps, which are 76 mm in length and have a 6 mm outside diameter, contain sequentially loaded beds of Carbotrap C, Carbotrap, and Carbosieve SIII, similar to a commercially available trap. The injection port of a gas chromatograph is configured for thermal desorption analysis of the traps via an in-house modification. Currently, multisorbent traps are being used to sample the headspace of underground storage tanks at the Department of Energy's Hanford site, in Richland, Washington. The analyses are performed by flame ionization or mass spectrometric detection. Target organic analytes include C 6 to C 13 alkanes, nitriles, alkyl ketones, dibutyl butyl phosphonate and tributyl phosphate. Pre-analytical holding times or practical reporting times for many target analytes are at least 84 days under either refrigerated or ambient conditions. Traps are fabricated, conditioned, and spiked with three surrogate standards in the vapor phase prior to shipment to the site. Recovery of the surrogates from the multisorbent traps serve as a statistical process control. Source concentrations of Hanford underground storage tank headspaces range from 0.96 mg/m 3 to 1200 mg/m 3

EURObservational Research Programme : The Heart Failure Pilot Survey (ESC-HF Pilot)

NARCIS (Netherlands)

Maggioni, Aldo P.; Dahlstrom, Ulf; Filippatos, Gerasimos; Chioncel, Ovidiu; Crespo Leiro, Marisa; Drozdz, Jaroslaw; Fruhwald, Friedrich; Gullestad, Lars; Logeart, Damien; Metra, Marco; Parissis, John; Persson, Hans; Ponikowski, Piotr; Rauchhaus, Mathias; Voors, Adriaan A.; Nielsen, Olav Wendelboe; Zannad, Faiez; Tavazzi, Luigi

2010-01-01

The primary objective of the new ESC-HF Pilot Survey was to describe the clinical epidemiology of outpatients and inpatients with heart failure (HF) and the diagnostic/therapeutic processes applied across 12 participating European countries. This pilot study was specifically aimed at validating the

Enhanced signal generation for use in the analysis of synthetic pyrethroids using chemical ionization tandem quadrupole ion trap mass spectrometry.

Science.gov (United States)

Sichilongo, Kwenga

2004-12-01

Synthetic pyrethroids fragment extensively under electron ionization (EI) conditions to give low mass ions, most of them with the same m/z ratios. This fragmentation is primarily due to the labile ester linkage found in these compounds. In this research we established the best gas chromatography (GC) conditions in the EI mode that served as a benchmark in the development of a chemical ionization (CI) protocol for ten selected synthetic pyrethroids. Based on proton affinity data, several reagent gases were evaluated in the positive CI ionization mode. Methanol was found to produce higher average ion counts relative to the other gases evaluated, which led to the development of an optimized method consisting of selective ejection chemical ionization (SECI) and MS/MS. Standard stainless steel ion trap electrodes produced significant degradation of chromatographic performance on late eluting compounds, which was attributed to electrode surface chemistry. A dramatic improvement in signal-to-noise (S/N) ratios was observed when the chromatographically inert Silcosteel coated electrodes were used. The resulting method, that has significant S/N ratio improvements resulting from a combination of septum programmable injections (SPI), optimized CI and inert Silcosteel-coated electrodes, was used to determine instrument detection limits.

Utilization of the ion traps by SPIRAL

International Nuclear Information System (INIS)

Le Brun, C.; Lienard, E.; Mauger, F.; Tamain, B.

1997-01-01

An ion trap is a device capable of confine particles, ions or atoms in a well-controlled environment isolated from any exterior perturbations. There are different traps. They are utilized to collect or stock ions, to cool them after in order to subject them to high precision measurement of masses, magnetic moments, hyperfine properties, beta decay properties, etc. Some dozen of traps are currently used all over the world to study stable or radioactive ions.. SPIRAL has been designed and built to produce radioactive ions starting from various heavy ion beams. SPIRAL has the advantage that the projectile parameters, the target and the energy can be chosen to optimize the production in various regions of the nuclear chart. Also, in SPIRAL it is possible to extract more rapidly the radioactive ions formed in the targets. In addition, in SPIRAL the multicharged ion production in a ECR source is possible. The utilization of multicharged ions is indeed very useful for fast mass measurements or for the study of the interaction between the nucleus and the electronic cloud. Finally, utilization of a ion trap on SPIRAL can be designed first at the level of production target by installing a low energy output line. Than, the trap system could be up-graded and brought to its full utilization behind of the recoil spectrometer. It must be capable of selecting and slowing down the ions produced in the reactions (fusion transfer, very inelastic collisions, etc.) induced by the radioactive ions accelerated in CIME. At present, the collaboration is debating on the most favored subject to study and the most suited experimental setups. The following subjects were selected: ion capture, purification and manipulation; isomers (separation and utilization); mass measurements; hyperfine interactions; lifetimes, nuclear electric cloud; β decays; study of the N = Z nuclei close to the proton drip line; physical and chemical properties of transuranium systems

Trapped Fermions with Density Imbalance in the Bose-Einstein Condensate Limit

International Nuclear Information System (INIS)

Pieri, P.; Strinati, G.C.

2006-01-01

We analyze the effects of imbalancing the populations of two-component trapped fermions, in the Bose-Einstein condensate limit of the attractive interaction between different fermions. Starting from the gap equation with two fermionic chemical potentials, we derive a set of coupled equations that describe composite bosons and excess fermions. We include in these equations the processes leading to the correct dimer-dimer and dimer-fermion scattering lengths. The coupled equations are then solved in the Thomas-Fermi approximation to obtain the density profiles for composite bosons and excess fermions, which are relevant to the recent experiments with trapped fermionic atoms

Study of the La-related dipole in TiN/LaO{sub x}/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Energy Technology Data Exchange (ETDEWEB)

Boujamaa, R. [STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France); CEA-LETI, MINATEC Campus, F38054 Grenoble (France); Laboratoire des Matériaux et du Génie Physique, CNRS, Grenoble INP, 3 parvis L. Néel, BP 257, 38016 Grenoble (France); Martinez, E.; Pierre, F.; Renault, O. [CEA-LETI, MINATEC Campus, F38054 Grenoble (France); Detlefs, B.; Zegenhagen, J. [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, F-38000 Grenoble (France); Baudot, S. [STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France); Gros-Jean, M., E-mail: Mickael.Gros-Jean@st.com [STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France); Bertin, F. [STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles (France); Dubourdieu, C., E-mail: Catherine.Dubourdieu@ec-lyon.fr [Institut des Nanotechnologies de Lyon, CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France)

2015-04-30

Highlights: • Precise La depth distribution in gate stacks before and after annealing by MEIS. • Analysis by HAXPES of the buried high K/SiO{sub 2} interface without removing TiN gate. • Formation of La-silicate at the HfSiON/SiON interface. • Internal electrical field induced at the HfSiON/SiON interface by the La diffusion. • Increase of electric field strength with initial LaO{sub x} thickness. - Abstract: In this paper, we report the effect of high temperature annealing on the chemical and electronic structure of technologically relevant TiN/LaO{sub x}/HfSiON/SiON/Si gate stacks. Using medium energy ion scattering from the backside of the samples, a non-destructive compositional depth profile of La has been obtained, revealing the lanthanum diffusion in the SiON interface layer upon annealing. To complement this analysis, hard X-ray photoelectron spectroscopy with synchrotron radiation has been performed to investigate the chemical and electronic structure of the gate stacks. The results show clear changes in the Hf and Ti core level energy positions with respect to Si bulk, with changes in the thickness of the LaO{sub x} capping layer. We infer that La diffusion generates an internal electrical field at the La-silicate interface between HfSiON and SiON, and that its strength increases with the increase of LaO{sub x} thickness. These findings support the band alignment model based on a La-induced interfacial dipole.

Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment

International Nuclear Information System (INIS)

Lai, C.S.; Wu, W.C.; Chao, T.S.; Chen, J.H.; Wang, J.C.; Tay, L.-L.; Rowell, Nelson

2006-01-01

In this letter, the effects of pre-CF 4 plasma treatment on Si for sputtered HfO 2 gate dielectrics are investigated. The significant fluorine was incorporated at the HfO 2 /Si substrate interface for a sample with the CF 4 plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF 4 plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF 4 plasma treated sample due to the elimination of the interfacial layer between HfO 2 and Si substrate. These improved characteristics of the HfO 2 gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO 2 film into the Si substrate

Probing the effect of neutron excess on the dynamics of Hf compound system

Science.gov (United States)

Sharma, Ishita; Kumar, Raj; Sharma, Manoj K.

2018-05-01

The reaction dynamics of 170Hf* and 174Hf* compound systems formed in 46,50Ti +124Sn reactions have been analyzed within the framework of Dynamical Cluster-decay Model (DCM) over an energy range of Ec.m.=115-156 MeV. The experimental data of fusion evaporation cross sections for 170,174Hf* systems is successfully addressed by optimizing the value of neck length ΔR. It is to be noted that calculations are performed by taking quadrupole deformations β2 with the optimum orientation of decaying fragments. Here, the effect of neutron excess has been examined on the structural properties of decaying fragments via fragmentation potential and preformation probability. The observation depicts that the isotopic effect prevails at fission region and as we move from lighter nucleus i.e. 170Hf* to heavier nucleus i.e. 174Hf*, the heavy mass fragments (HMF) start contributing along with fission fragments which are equally evident for 170Hf* as well. The ΔR values so obtained are compared at center of mass-energies which consequently provides information regarding the relative time scale of decaying fragments.

Trapping radioactive ions

CERN Document Server

Kluge, Heinz-Jürgen

2004-01-01

Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning.

Trapping radioactive ions

International Nuclear Information System (INIS)

Kluge, H.-J.; Blaum, K.

2004-01-01

Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning

Centrifugal stretching along the ground state band of 168Hf

International Nuclear Information System (INIS)

Costin, A.; Pietralla, N.; Reese, M.; Moeller, O.; Ai, H.; Casten, R. F.; Heinz, A.; McCutchan, E. A.; Meyer, D. A.; Qian, J.; Werner, V.; Dusling, K.; Fitzpatrick, C. R.; Guerdal, G.; Petkov, P.; Rainovski, G.

2009-01-01

The lifetimes of the J π =4 + , 6 + , 8 + , and 10 + levels along the ground state band in 168 Hf were measured by means of the recoil distance Doppler shift (RDDS) method using the New Yale Plunger Device (NYPD) and the SPEEDY detection array at Wright Nuclear Structure Laboratory of Yale University. Excited states in 168 Hf were populated using the 124 Sn( 48 Ti,4n) fusion evaporation reaction. The new lifetime values are sufficiently precise to clearly prove the increase of quadrupole deformation as a function of angular momentum in the deformed nucleus 168 Hf. The data agree with the predictions from the geometrical confined β-soft (CBS) rotor model that involves centrifugal stretching in a soft potential

Effects of C and Hf concentration on phase relations and microstructure of a wrought powder-metallurgy superalloy

Science.gov (United States)

Miner, R. V., Jr.

1977-01-01

NASA IIB-11, a candidate alloy for advanced temperature turbine engine disks, and four modifications with varying C and Hf concentrations were produced from prealloyed powders. Several notable effects of C and Hf concentration in the alloys were observed. Both the amount of the gamma-prime phase and its solvus temperature increased with decreasing C, but only the gamma-prime solvus was affected by Hf, increasing with increasing Hf. Hf also promoted a cellular gamma-prime precipitation. Hf was, however, about equally distributed between gamma-prime and gamma. Hf and C both affected the carbides formed. Increasing both promoted formation of an MC relative to that of an M6C.

HF propagation results from the Metal Oxide Space Cloud (MOSC) experiment

Science.gov (United States)

Joshi, Dev; Groves, Keith M.; McNeil, William; Carrano, Charles; Caton, Ronald G.; Parris, Richard T.; Pederson, Todd R.; Cannon, Paul S.; Angling, Matthew; Jackson-Booth, Natasha

2017-06-01

With support from the NASA sounding rocket program, the Air Force Research Laboratory launched two sounding rockets in the Kwajalein Atoll, Marshall Islands in May 2013 known as the Metal Oxide Space Cloud experiment. The rockets released samarium metal vapor at preselected altitudes in the lower F region that ionized forming a plasma cloud. Data from Advanced Research Project Agency Long-range Tracking and Identification Radar incoherent scatter radar and high-frequency (HF) radio links have been analyzed to understand the impacts of the artificial ionization on radio wave propagation. The HF radio wave ray-tracing toolbox PHaRLAP along with ionospheric models constrained by electron density profiles measured with the ALTAIR radar have been used to successfully model the effects of the cloud on HF propagation. Up to three new propagation paths were created by the artificial plasma injections. Observations and modeling confirm that the small amounts of ionized material injected in the lower F region resulted in significant changes to the natural HF propagation environment.

Reducing the stoichiometric excess of HF in the hydrofluorination of UO2

International Nuclear Information System (INIS)

Zhao Jun; Qiu Lufu; Zhong Xing; Xu Heqing

1989-11-01

In a fluidized bed, UO 2 obtained from the decomposition-reduction of AUC (Ammonium Uranyl Carbonate) was fed to absorb HF remaining in the exhaust gas of UF 4 production process. In the case of 60% conversion of UO 2 and the reaction temperature in the region of 300 deg C, HF remaining in the exhaust gas in absorbing fluidized bed was less than 7 ∼ 8% (w/w), i.e. apparent stoichiometric excess of HF had reduced to 0% more or less. Hence, with the high hydrofluorination reactivity of UO 2 obtained from the decomposition-reduction of AUC, it is possible to reduce evidently the stoichiometric excess of HF in the hydrofluorination process by two fluidized beds in series in which solids move against the gas flow

Effect of trap position on the efficiency of trapping in treelike scale-free networks

International Nuclear Information System (INIS)

Zhang Zhongzhi; Lin Yuan; Ma Youjun

2011-01-01

The conventional wisdom is that the role and impact of nodes on dynamical processes in scale-free networks are not homogenous, because of the presence of highly connected nodes at the tail of their power-law degree distribution. In this paper, we explore the influence of different nodes as traps on the trapping efficiency of the trapping problem taking place on scale-free networks. To this end, we study in detail the trapping problem in two families of deterministically growing scale-free networks with treelike structure: one family is non-fractal, the other is fractal. In the first part of this work, we attack a special case of random walks on the two network families with a perfect trap located at a hub, i.e. node with the highest degree. The second study addresses the case with trap distributed uniformly over all nodes in the networks. For these two cases, we compute analytically the mean trapping time (MTT), a quantitative indicator characterizing the trapping efficiency of the trapping process. We show that in the non-fractal scale-free networks the MTT for both cases follows different scalings with the network order (number of network nodes), implying that trap's position has a significant effect on the trapping efficiency. In contrast, it is presented that for both cases in the fractal scale-free networks, the two leading scalings exhibit the same dependence on the network order, suggesting that the location of trap has no essential impact on the trapping efficiency. We also show that for both cases of the trapping problem, the trapping efficiency is more efficient in the non-fractal scale-free networks than in their fractal counterparts.

Influence of trap location on the efficiency of trapping in dendrimers and regular hyperbranched polymers.

Science.gov (United States)

Lin, Yuan; Zhang, Zhongzhi

2013-03-07

The trapping process in polymer systems constitutes a fundamental mechanism for various other dynamical processes taking place in these systems. In this paper, we study the trapping problem in two representative polymer networks, Cayley trees and Vicsek fractals, which separately model dendrimers and regular hyperbranched polymers. Our goal is to explore the impact of trap location on the efficiency of trapping in these two important polymer systems, with the efficiency being measured by the average trapping time (ATT) that is the average of source-to-trap mean first-passage time over every staring point in the whole networks. For Cayley trees, we derive an exact analytic formula for the ATT to an arbitrary trap node, based on which we further obtain the explicit expression of ATT for the case that the trap is uniformly distributed. For Vicsek fractals, we provide the closed-form solution for ATT to a peripheral node farthest from the central node, as well as the numerical solutions for the case when the trap is placed on other nodes. Moreover, we derive the exact formula for the ATT corresponding to the trapping problem when the trap has a uniform distribution over all nodes. Our results show that the influence of trap location on the trapping efficiency is completely different for the two polymer networks. In Cayley trees, the leading scaling of ATT increases with the shortest distance between the trap and the central node, implying that trap's position has an essential impact on the trapping efficiency; while in Vicsek fractals, the effect of location of the trap is negligible, since the dominant behavior of ATT is identical, respective of the location where the trap is placed. We also present that for all cases of trapping problems being studied, the trapping process is more efficient in Cayley trees than in Vicsek fractals. We demonstrate that all differences related to trapping in the two polymer systems are rooted in their underlying topological structures.

Towards trapped antihydrogen

CERN Document Server

Jorgensen, L V; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Page, R D; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

2008-01-01

Substantial progress has been made in the last few years in the nascent field of antihydrogen physics. The next big step forward is expected to be the trapping of the formed antihydrogen atoms using a magnetic multipole trap. ALPHA is a new international project that started to take data in 2006 at CERN’s Antiproton Decelerator facility. The primary goal of ALPHA is stable trapping of cold antihydrogen atoms to facilitate measurements of its properties. We discuss the status of the ALPHA project and the prospects for antihydrogen trapping.

HF-DLLME

OpenAIRE

Simão, Vanessa

2015-01-01

Tese (doutorado) - Universidade Federal de Santa Catarina, Centro de Ciências Físicas e Matemáticas, Programa de Pós-Graduação em Química, Florianópolis, 2015. Neste trabalho foi proposto, pela primeira vez, a combinação simultânea das técnicas de microextração em fase líquida suportada em fibra oca (HF-LPME) e microextração líquido-líquido dispersiva (DLLME) para aplicação em amostras líquidas. Dois estudos foram desenvolvidos utilizando a metodologia proposta, a qua...

Phase transformation and precipitation in aged Ti-Ni-Hf high-temperature shape memory alloys

International Nuclear Information System (INIS)

Meng, X.L.; Cai, W.; Zheng, Y.F.; Zhao, L.C.

2006-01-01

More attention has been paid to ternary Ti-Ni-Hf high-temperature shape memory alloys (SMAs) due to their high phase transformation temperatures, good thermal stability and low cost. However, the Ti-Ni-Hf alloys have been found to have low ductility and only about 3% shape memory effect and these have hampered their applications. It is well known that there are three methods to improve the shape memory properties of high-temperature SMAs: (a) cold rolling + annealing; (b) adding another element to the alloy; (c) aging. These methods are not suitable to improve the properties of Ti-Ni-Hf alloys. In this paper, a method of conditioning Ni-rich Ti-Ni-Hf alloys as high-temperature SMAs by aging is presented. For Ni-rich Ti 80-x Ni x Hf 20 alloys (numbers indicate at.%) the phase transformation temperatures are on average increased by more than 100 K by aging at 823 K for 2 h. Especially for those alloys with Ni contents less than 50.6 at.%, the martensitic transformation start temperatures (M s ) are higher than 473 K after aging. Transmission electron microscopy shows the presence of (Ti + Hf) 3 Ni 4 precipitates after aging. Compared with the precipitation of Ti 3 Ni 4 particles in Ni-rich Ti-Ni alloys, the precipitation of (Ti + Hf) 3 Ni 4 particles in Ni-rich Ti-Ni-Hf alloys needs higher temperatures and longer times

Decolourization and degradation of azo Dye, Synozol Red HF6BN ...

African Journals Online (AJOL)

Decolourization and degradation of azo Dye, Synozol Red HF6BN, by Pleurotus ostreatus. Sidra Ilyas, Skinder Sultan Sultan, Abdul Rehman. Abstract. The present paper focuses on the use of fungus, Pleurotus ostreatus, to decolorize and degrade azo dye, Synazol Red HF6BN. Decolorization study showed that P.

Two-species mixing in a nested Penning trap for antihydrogen trapping

International Nuclear Information System (INIS)

Ordonez, C. A.; Weathers, D. L.

2008-01-01

There exists an international quest to trap neutral antimatter in the form of antihydrogen for scientific study. One method that is being developed for trapping antihydrogen employs a nested Penning trap. Such a trap serves to mix positrons and antiprotons so as to produce low energy antihydrogen atoms. Mixing is achieved when the confinement volumes of the two species overlap one another. In the work presented here, a theoretical understanding of the mixing process is developed by analyzing a mixing scheme that was recently reported [G. Gabrielse et al., Phys. Rev. Lett. 100, 113001 (2008)]. The results indicate that positron space charge or collisions among antiprotons may substantially reduce the fraction of antiprotons that have an energy suitable for antihydrogen trapping

Very high latitude F-region irregularities observed by HF-radar backscatter

International Nuclear Information System (INIS)

Baker, K.B.; Greenwald, R.A.; Tsunoda, R.T.

1983-01-01

In February and March, 1982, a coherent scatter HF radar was operated from Cleary, Alaska to observe 7- to 15-m wavelength F-region plasma irregularities near the poleward edge of the auroral zone and in the polar cap. The radar operated for five days from February 25 to March 1 and produced approximately 700,000 Doppler spectra during that time. Of those nearly 700,000 spectra, approximately 10% showed backscattered power 3 dB or more above the noise level. A ray tracing technique using electron densities determined by the Chatanika incoherent scatter radar was used to predict locations where the HF waves were approximately normal to the magnetic field. If those locations were also to contain small scale electron density structure, then one would expect them to backscatter the HF waves. Several comparisons were made between predicted and observed locations of radiowave backscatter and excellent agreement was obtained. In addition, comparisons of the Doppler velocities observed by the coherent scatter HF radar and those observed by the Chatanika radar showed good agreement, suggesting that the plasma irregularities observed by the HF radar drift with the ambient plasma. In addition, average vector velocities calculated for the entire 5-day period show a flow pattern consistent with polar cap convection models. This again indicates that the irregularities drift with the plasma, as is predicted by a number of theories of F-region plasma irregularities. In the summer of 1983, the research program begun with those measurements will be continued with a steerable phased-array HF radar located at Goose Bay, Labrador, that will view the same ionospheric region as does the Sondre Stromfjord incoherent scatter radar

Dynamic analysis of trapping and escaping in dual beam optical trap

Science.gov (United States)

Li, Wenqiang; Hu, Huizhu; Su, Heming; Li, Zhenggang; Shen, Yu

2016-10-01

In this paper, we simulate the dynamic movement of a dielectric sphere in optical trap. This dynamic analysis can be used to calibrate optical forces, increase trapping efficiency and measure viscous coefficient of surrounding medium. Since an accurate dynamic analysis is based on a detailed force calculation, we calculate all forces a sphere receives. We get the forces of dual-beam gradient radiation pressure on a micron-sized dielectric sphere in the ray optics regime and utilize Einstein-Ornstein-Uhlenbeck to deal with its Brownian motion forces. Hydrodynamic viscous force also exists when the sphere moves in liquid. Forces from buoyance and gravity are also taken into consideration. Then we simulate trajectory of a sphere when it is subject to all these forces in a dual optical trap. From our dynamic analysis, the sphere can be trapped at an equilibrium point in static water, although it permanently fluctuates around the equilibrium point due to thermal effects. We go a step further to analyze the effects of misalignment of two optical traps. Trapping and escaping phenomena of the sphere in flowing water are also simulated. In flowing water, the sphere is dragged away from the equilibrium point. This dragging distance increases with the decrease of optical power, which results in escaping of the sphere with optical power below a threshold. In both trapping and escaping process we calculate the forces and position of the sphere. Finally, we analyze a trapping region in dual optical tweezers.

Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO{sub x} films

Energy Technology Data Exchange (ETDEWEB)

Qiu, X.Y.; Zhang, S.Y.; Zhang, T.; Wang, R.X.; Li, L.T.; Zhang, Y. [Southwest University, School of Physical Science and Technology, Chongqing (China); Dai, J.Y. [The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong (China)

2016-09-15

Amorphous Ge-doped HfO{sub x} films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfO{sub x} matrix and the existence of HfSiO{sub x} interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfO{sub x}/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 x 10{sup 4} cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfO{sub x} film. (orig.)

The effects of sacubitril/valsartan on coronary outcomes in PARADIGM-HF

DEFF Research Database (Denmark)

Mogensen, Ulrik M.; Køber, Lars; Kristensen, Søren L.

2017-01-01

Background Angiotensin converting enzyme inhibitors (ACE-I), are beneficial both in heart failure with reduced ejection fraction (HF-REF) and after myocardial infarction (MI). We examined the effects of the angiotensin-receptor neprilysin inhibitor sacubitril/valsartan, compared with the ACE......-I enalapril, on coronary outcomes in PARADIGM-HF. Methods and results We examined the effect of sacubitril/valsartan compared with enalapril on the following outcomes: i) the primary composite endpoint of cardiovascular (CV) death or HF hospitalization, ii) a pre-defined broader composite including...... patients, compared with enalapril, sacubitril/valsartan reduced the risk of the primary outcome (HR 0.80 [0.73–0.87], P 

Assembly of the CMS HF (hadron forward) calorimeter, April 2003 to June 2005

CERN Multimedia

Tejinder S. Virdee, CERN

2005-01-01

The forward calorimeters (HF) of the CMS hadron calorimeter system are located 11.2 m from the interaction point. Each HF module is composed by 18 wedges, made of steel absorbers and radiation-hard quartz fibers. The photogallery shows the wedges (Figs. 1-3, April 2003), the assembly of one HF module (Figs. 4-9, May and June 2004) and the assembly of the other (Figs. 10-11, June 2005)

Structural, morphological, optical and photoluminescence properties of HfO2 thin films

International Nuclear Information System (INIS)

Ma, C.Y.; Wang, W.J.; Wang, J.; Miao, C.Y.; Li, S.L.; Zhang, Q.Y.

2013-01-01

Nanocrystalline monoclinic HfO 2 films with an average crystal size of 4.2–14.8 nm were sputter deposited under controlled temperatures and their structural characteristics and optical and photoluminescence properties have been evaluated. Structural investigations indicate that monoclinic HfO 2 films grown at higher temperatures above 400 °C are highly oriented along the (− 111) direction. The lattice expansion increases with diminishing HfO 2 crystalline size below 6.8 nm while maximum lattice expansion occurs with highly oriented monoclinic HfO 2 of crystalline size about 14.8 nm. The analysis of atomic force microscopy shows that the film growth at 600 °C can be attributed to the surface-diffusion-dominated growth. The intensity of the shoulderlike band that initiates at ∼ 5.7 eV and saturates at 5.94 eV shows continued increase with increasing crystalline size, which is intrinsic to nanocrystalline monoclinic HfO 2 films. Optical band gap varies in the range 5.40 ± 0.03–5.60 ± 0.03 eV and is slightly decreased with the increase in crystalline size. The luminescence band at 4.0 eV of HfO 2 films grown at room temperature can be ascribed to the vibronic transition of excited OH · radical while the emission at 3.2–3.3 eV for the films grown at all temperatures was attributed to the radiative recombination at impurity and/or defect centers. - Highlights: • Nanocrystalline monoclinic HfO 2 films were sputter deposited. • Structural, optical and photoluminescence properties were studied. • To analyze the scaling behavior using the power spectral density • Optical and photoluminescence properties strongly depend on film growth temperature

Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

NARCIS (Netherlands)

Strijkers, G.J.; Swagten, H.J.M.; Rulkens, B.; Bitter, R.H.J.N.; Jonge, de W.J.M.; Bloemen, P.J.H.; Schep, K.M.

1998-01-01

We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The

Efficacy of Sacubitril/Valsartan Relative to a Prior Decompensation: The PARADIGM-HF Trial.

Science.gov (United States)

Solomon, Scott D; Claggett, Brian; Packer, Milton; Desai, Akshay; Zile, Michael R; Swedberg, Karl; Rouleau, Jean; Shi, Victor; Lefkowitz, Martin; McMurray, John J V

2016-10-01

This study assessed whether the benefit of sacubtril/valsartan therapy varied with clinical stability. Despite the benefit of sacubitril/valsartan therapy shown in the PARADIGM-HF (Prospective Comparison of ARNI with ACEI to Determine Impact on Global Mortality and Morbidity in Heart Failure) trial, it has been suggested that switching from an angiotensin-converting enzyme inhibitor or an angiotensin receptor blocker should be delayed until occurrence of clinical decompensation. Outcomes were compared among patients who had prior hospitalization within 3 months of screening (n = 1,611 [19%]), between 3 and 6 months (n = 1,009 [12%]), between 6 and 12 months (n = 886 [11%]), >12 months (n = 1,746 [21%]), or who had never been hospitalized (n = 3,125 [37%]). Twenty percent of patients without prior HF hospitalization experienced a primary endpoint of cardiovascular death or heart failure (HF) hospitalization during the course of the trial. Despite the increased risk associated with more recent hospitalization, the efficacy of sacubitril/valsartan therapy did not differ from that of enalapril according to the occurrence of or time from hospitalization for HF before screening, with respect to the primary endpoint or with respect to cardiovascular or all-cause mortality. Patients with recent HF decompensation requiring hospitalization were more likely to experience cardiovascular death or HF hospitalization than those who had never been hospitalized. Patients who were clinically stable, as shown by a remote HF hospitalization (>3 months prior to screening) or by lack of any prior HF hospitalization, were as likely to benefit from sacubitril/valsartan therapy as more recently hospitalized patients. (Prospective Comparison of ARNI with ACEI to Determine Impact on Global Mortality and Morbidity in Heart Failure [PARADIGM-HF]; NCT01035255). Copyright © 2016 American College of Cardiology Foundation. Published by Elsevier Inc. All rights reserved.

Evolution of Zr/Hf/Zr trilayers during annealing studied by RBS

International Nuclear Information System (INIS)

Kling, A.; Soares, J.C.

2010-01-01

The Zr/Hf system is highly interesting due its various applications, e.g. formation of amorphous ternary alloys, superconductive properties and production of gate oxide layers with high dielectric coefficients by oxidation of Zr/Hf multilayers. In this work Zr/Hf/Zr trilayers with an individual layer thickness of approximately 50 nm were deposited by electron gun evaporation on a substrate consisting of silicon covered by a micrometer thick thermal oxide layer. Samples were subjected to annealing procedures at 500 and 1200 o C in flowing air atmosphere to promote oxidation and Zr/Hf interdiffusion effects. RBS studies of the as-deposited and annealed samples were performed at the van-de-Graaff accelerator of ITN using He + and H + beams with energies between 2.0 and 2.525 MeV in order to study compositional changes induced by the heat treatment. In the case of low-temperature annealing the layer system appears, besides the oxidation process starting from the surface, to be stable. On the other hand, high-temperature annealing leads to an asymmetric Hf-diffusion into the surface and interior Zr-layer provoked by anomalous diffusion due to a phase transition in Zr accompanied by an almost complete oxidation of the layer structure Oxygen and metal depth distributions obtained by RBS in the as-deposited and treated samples are provided.

Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

International Nuclear Information System (INIS)

Chen, T.-H.; Liou, Y.; Wu, T.J.; Chen, J.Y.

2004-01-01

We have enhanced the luminance and the power efficiency of organic light-emitting devices with Hf-doped indium tin oxide (ITO) anodes instead of a CuPc layer. The Hf-doped ITO layer with a thickness of 15 nm was deposited on top of the ITO anode. Less than 10 mol. % of Hf was doped in ITO films by adjusting the sputtering rates of both sources. The highest work function of the Hf-doped ITO layers was 5.4 eV at the Hf concentrations about 10 mol. %. The driving voltages of the device have been reduced by 1 V. A luminance of 1000 cd/m 2 at 7 mA/cm 2 , a current efficiency of 14 cd/A, and a power efficiency of 6 lm/W at 6 mA/cm 2 have been achieved in the device with a 4 mol. % Hf-doped ITO layer (work function=5.2 eV). In general, the performance was about 50% better than the device with a CuPc buffer layer

Determining characteristics of HF communications links using SuperDARN

Directory of Open Access Journals (Sweden)

J. M. Hughes

2002-07-01

Full Text Available Space weather effects can strongly influence high-frequency (HF communications by changing the ionospheric environment through which the radio waves propagate. Since many systems utilize HF communications, the ability to make real-time assessments of propagation conditions is an important part of space weather monitoring systems. In this paper, we present new techniques for measuring high-latitude HF communications link parameters using data from SuperDARN radars. These techniques use ground-scatter returns to define the variation in skip distance with frequency. From these data, the maximum usable frequency (MUF as a function of range is determined and ionospheric critical frequencies are estimated. These calculations are made in near-real-time and the results are made available on the World Wide Web. F-region critical frequencies calculated using this method show good agreement with ionosonde data.Key words. Ionosphere (active experiments; instruments and techniques – Radio science (ionospheric propagation

Determining characteristics of HF communications links using SuperDARN

Directory of Open Access Journals (Sweden)

J. M. Hughes

Full Text Available Space weather effects can strongly influence high-frequency (HF communications by changing the ionospheric environment through which the radio waves propagate. Since many systems utilize HF communications, the ability to make real-time assessments of propagation conditions is an important part of space weather monitoring systems. In this paper, we present new techniques for measuring high-latitude HF communications link parameters using data from SuperDARN radars. These techniques use ground-scatter returns to define the variation in skip distance with frequency. From these data, the maximum usable frequency (MUF as a function of range is determined and ionospheric critical frequencies are estimated. These calculations are made in near-real-time and the results are made available on the World Wide Web. F-region critical frequencies calculated using this method show good agreement with ionosonde data.

Key words. Ionosphere (active experiments; instruments and techniques – Radio science (ionospheric propagation

Deuterium trapping in tungsten

Science.gov (United States)

Poon, Michael

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation. Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation. The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D2 molecules inside the void with a trap energy of 1.2 eV. Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Deuterium trapping in tungsten

International Nuclear Information System (INIS)

Poon, M.

2004-01-01

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D 2 molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

Deuterium trapping in tungsten

Energy Technology Data Exchange (ETDEWEB)

Poon, M

2004-07-01

Tungsten is one of the primary material candidates being investigated for use in the first-wall of a magnetic confinement fusion reactor. An ion accelerator was used to simulate the type of ion interaction that may occur at a plasma-facing material. Thermal desorption spectroscopy (TDS) was the primary tool used to analyze the effects of the irradiation Secondary ion mass spectroscopy (SIMS) was used to determine the distribution of trapped D in the tungsten specimen. The tritium migration analysis program (TMAP) was used to simulate thermal desorption profiles from the D depth distributions. Fitting of the simulated thermal desorption profiles with the measured TDS results provided values of the D trap energies. . Deuterium trapping in single crystal tungsten was studied as a function of the incident ion fluence, ion flux, irradiation temperature, irradiation history, and surface impurity levels during irradiation The results show that deuterium was trapped at vacancies and voids. Two deuterium atoms could be trapped at a tungsten vacancy, with trapping energies of 1.4 eV and 1.2 eV for the first and second D atoms, respectively. In a tungsten void, D is trapped as atoms adsorbed on the inner walls of the void with a trap energy of 2.1 eV, or as D{sub 2} molecules inside the void with a trap energy of 1.2 eV. . Deuterium trapping in polycrystalline tungsten was also studied as a function of the incident fluence, irradiation temperature, and irradiation history. Deuterium trapping in polycrystalline tungsten also occurs primarily at vacancies and voids with the same trap energies as in single crystal tungsten; however, the presence of grain boundaries promotes the formation of large surface blisters with high fluence irradiations at 500 K. In general, D trapping is greater in polycrystalline tungsten than in single crystal tungsten. To simulate mixed materials comprising of carbon (C) and tungsten, tungsten specimens were pre-irradiated with carbon ions prior to D

SIMS study of oxygen diffusion in monoclinic HfO2

Science.gov (United States)

Mueller, Michael P.; De Souza, Roger A.

2018-01-01

The diffusion of oxygen in dense ceramics of monoclinic HfO2 was studied by means of (18O/16O) isotope exchange annealing and subsequent determination of isotope depth profiles by Secondary Ion Mass Spectrometry. Anneals were performed in the temperature range of 573 ≤T /K ≤ 973 at an oxygen partial pressure of p O2=200 mbar . All measured isotope profiles exhibited two features: the first feature, closer to the surface, was attributed mainly to slow oxygen diffusion in an impurity silicate phase; the second feature, deeper in the sample, was attributed to oxygen diffusion in bulk monoclinic HfO2 . The activation enthalpy of oxygen tracer diffusion in bulk HfO2 was found to be ΔHD∗≈0.5 eV .

Ergonomics action research II: a framework for integrating HF into work system design.

Science.gov (United States)

Neumann, W P; Village, J

2012-01-01

This paper presents a conceptual framework that can support efforts to integrate human factors (HF) into the work system design process, where improved and cost-effective application of HF is possible. The framework advocates strategies of broad stakeholder participation, linking of performance and health goals, and process focussed change tools that can help practitioners engage in improvements to embed HF into a firm's work system design process. Recommended tools include business process mapping of the design process, implementing design criteria, using cognitive mapping to connect to managers' strategic goals, tactical use of training and adopting virtual HF (VHF) tools to support the integration effort. Consistent with organisational change research, the framework provides guidance but does not suggest a strict set of steps. This allows more adaptability for the practitioner who must navigate within a particular organisational context to secure support for embedding HF into the design process for improved operator wellbeing and system performance. There has been little scientific literature about how a practitioner might integrate HF into a company's work system design process. This paper proposes a framework for this effort by presenting a coherent conceptual framework, process tools, design tools and procedural advice that can be adapted for a target organisation.

Status and outlook of CHIP-TRAP: The Central Michigan University high precision Penning trap

Science.gov (United States)

Redshaw, M.; Bryce, R. A.; Hawks, P.; Gamage, N. D.; Hunt, C.; Kandegedara, R. M. E. B.; Ratnayake, I. S.; Sharp, L.

2016-06-01

At Central Michigan University we are developing a high-precision Penning trap mass spectrometer (CHIP-TRAP) that will focus on measurements with long-lived radioactive isotopes. CHIP-TRAP will consist of a pair of hyperbolic precision-measurement Penning traps, and a cylindrical capture/filter trap in a 12 T magnetic field. Ions will be produced by external ion sources, including a laser ablation source, and transported to the capture trap at low energies enabling ions of a given m / q ratio to be selected via their time-of-flight. In the capture trap, contaminant ions will be removed with a mass-selective rf dipole excitation and the ion of interest will be transported to the measurement traps. A phase-sensitive image charge detection technique will be used for simultaneous cyclotron frequency measurements on single ions in the two precision traps, resulting in a reduction in statistical uncertainty due to magnetic field fluctuations.

Evaluation method for acoustic trapping performance by tracking motion of trapped microparticle

Science.gov (United States)

Lim, Hae Gyun; Ham Kim, Hyung; Yoon, Changhan

2018-05-01

We report a method to evaluate the performances of a single-beam acoustic tweezer using a high-frequency ultrasound transducer. The motion of a microparticle trapped by a 45-MHz single-element transducer was captured and analyzed to deduce the magnitude of trapping force. In the proposed method, the motion of a trapped microparticle was analyzed from a series of microscopy images to compute trapping force; thus, no additional equipment such as microfluidics is required. The method could be used to estimate the effective trapping force in an acoustic tweezer experiment to assess cell membrane deformability by attaching a microbead to the surface of a cell and tracking the motion of the trapped bead, which is similar to a bead-based assay that uses optical tweezers. The results showed that the trapping force increased with increasing acoustic intensity and duty factor, but the force eventually reached a plateau at a higher acoustic intensity. They demonstrated that this method could be used as a simple tool to evaluate the performance and to optimize the operating conditions of acoustic tweezers.

Neutron activation analysis for chemical characterization of Brazilian oxo-biodegradable plastics

International Nuclear Information System (INIS)

Mateus Eugenio Boscaro; De Nadai Fernandes, E.A.; Marcio Arruda Bacchi; Luis Gustavo Cofani dos Santos; Cofani dos Santos, S.N.S.; Sandra Mara Martins-Franchetti

2015-01-01

The chemical characterization of oxo-biodegradable plastic bags was performed by neutron activation analysis. The presence of several chemical elements (As, Br, Ca, Co, Cr, Fe, Hf, K, La, Na, Sb, Sc, Ta and Zn) with large variability of mass fractions amongst samples indicates that these plastics receive additives and may have been contaminated during manufacturing process thereby becoming potential environmental pollutants. (author)

Photon strength function in the Hf-181 nucleus by method of two-step cascade

International Nuclear Information System (INIS)

Le Hong Khiem

2003-01-01

The applicability of sum-coincidence measurements of two-step cascade gamma ray spectra determining Photon Strength Function (PSF) of Hf-181 induced from Hf-180 (n,2γ) Hf-181 reaction is presented. Up to 80% intensity of the primary gamma ray transitions in a wide energy range have been deduced and compared to model calculation. (author)

Effectiveness of Mosquito Trap with Sugar Fermented Attractant to the Vector of Dengue Hemorrhagic Fever

Directory of Open Access Journals (Sweden)

Endang Puji Astuti

2011-06-01

Full Text Available Aedes aegypti is the main vector of dengue fever that is still become health problem in the world. Various control efforts has been done at several areas through chemically or naturally control. Developing mosquitoes trapping tool is an alternative method to control mosquitoes besides insecticides utilization. This laboratorium research utilize sugar fermented process to yield CO2 as one of attractan to mosquito. Production of ethanol and CO2 can be yielded from anaerob sugar fermentation proccess (without O2 by khamir Saccharomyces cerevisiae activities. The trapped mosquitoes was observed up to 48 hours exposure, the highest average of mosquito trapped is on solution treatment with yeast 1 gram (43.2% and 40 gr sugar (48.4%. The highest effectivity of trapping tool both inside or outside was on the 14th day. There were declained amount of trapped mosquitos on 16th and 18th days. This laboratorium research has described that trapping tool with sugar fermented solution were effective to control population of dengue vector.

Dosimetry of ultraviolet radiation with BaHfO{sub 3} powders; Dosimetria de radiacion ultravioleta con polvos de BaHfO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Barrera A, A. A.; Aguilar D, G. A.; Guzman M, J.; Rivera M, T. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Av. Legaria 694, Col. Irrigacion, 11500 Ciudad de Mexico (Mexico); Ceron R, V., E-mail: abalba1@hotmail.com [Universidad de Guanajuato, 37670 Leon, Guanajuato (Mexico)

2016-10-15

Ceramic materials based on pure barium hafnate (BaHfO{sub 3}) have been obtained as a powder by the co-precipitation method. The powders obtained have a cubic structure that favors the thermoluminescent and optical properties, through which a better detection of the non-ionizing radiation is allowed. With these powders various tests were performed in the ultraviolet range at different exposure times. These thermoluminescent (Tl) studies were carried out using a Tl 3500 hand held reader which yielded a brightness curve that ranged from room temperature to the 350 degrees Celsius. This BaHfO{sub 3} response exhibits a broad brightness curve with a single peak centered around 225 degrees Celsius. Finally, is reported that there are materials of barium hafnate (BaHfO{sub 3}) doped with some rare earths (Eu, Tb) which, instead of improving the performance of the powders, decrease it, so that the use of intrinsic barium hafnate is the most appropriate. (Author)

Clinopyroxenes still trapped in diamonds: high-energy synchrotron X-ray diffraction as a chemical probe

Science.gov (United States)

Casati, Nicola; Nestola, Fabrizio; Alvaro, Matteo; Wilhelm, Heribert; Kleppe, Annette; Nimis, Paolo; Harris, Jeffrey W.

2014-05-01

Clinopyroxenes are mainly Ca-Na-Fe-Mg-silicates constituting a significant portion of the Earth's upper mantle up to 20% of such shell of our planet. They could be found as typical mineral inclusions in diamonds being diopsidic and omphacitic in composition and, together with garnets, cover a key role in providing indications concerning the source rock in which the diamond crystallize. In detail, it is well known that eclogitic diamonds are characterized by clinopyroxenes with omphacitic compositions (about Ca0.5Na0.5Mg0.5Al0.5Si2O6) whereas peridotitic diamonds show clinopyroxenes very rich in the diopside end-member (CaMgSi2O6). In order to get direct chemical composition on the inclusions, and therefore on the diamond origin source, it is obviously necessary to extract them breaking and/or polishing the diamond host. However, a non-destructive investigation of an inclusion still trapped in a diamond is useful and important for different reasons: (1) the inclusions could be under pressure and their crystal structure can be modified if the pressure is released by the extraction; (2) the residual pressure on the inclusion can provide information about the formation pressure of the diamond (e.g. Nestola et al. 2011 and references therein); (3) the morphology and growth relationships of the inclusion with the host diamond can provide indications about its protogenetic vs. syngenetic and/or epigenetic nature; and (4) preservation of the diamond surface growth features can maintain crucial information on late oxidation processes (Fedortchouk et al. 2011). However the available methods to measure the composition of the inclusions implies to destroy the sample. The aim of this work is to obtain chemical information on the inclusions still trapped in their diamond host and therefore to indicate the diamond origin without extracting the inclusions. The work was carried out by single crystal X-ray diffraction using a new experimental approach by high energy synchrotron

Chemical Pollution from Combustion of Modern Spacecraft Materials

Science.gov (United States)

Mudgett, Paul D.

2013-01-01

Fire is one of the most critical contingencies in spacecraft and any closed environment including submarines. Currently, NASA uses particle based technology to detect fires and hand-held combustion product monitors to track the clean-up and restoration of habitable cabin environment after the fire is extinguished. In the future, chemical detection could augment particle detection to eliminate frequent nuisance false alarms triggered by dust. In the interest of understanding combustion from both particulate and chemical generation, NASA Centers have been collaborating on combustion studies at White Sands Test Facility using modern spacecraft materials as fuels, and both old and new technology to measure the chemical and particulate products of combustion. The tests attempted to study smoldering pyrolysis at relatively low temperatures without ignition to flaming conditions. This paper will summarize the results of two 1-week long tests undertaken in 2012, focusing on the chemical products of combustion. The results confirm the key chemical products are carbon monoxide (CO), hydrogen cyanide (HCN), hydrogen fluoride (HF) and hydrogen chloride (HCl), whose concentrations depend on the particular material and test conditions. For example, modern aerospace wire insulation produces significant concentration of HF, which persists in the test chamber longer than anticipated. These compounds are the analytical targets identified for the development of new tunable diode laser based hand-held monitors, to replace the aging electrochemical sensor based devices currently in use on the International Space Station.

Mid-Latitude Mobile Wideband HF- NVIS Channel Analysis: Part 1

Science.gov (United States)

2017-09-14

commercial satellite communications (SATCOM) for beyond line-of-sight (LOS) links. However, standard HF systems operating over a 3-kHz bandwidth do not...citation of trade names and names of names of manufacturers is not to be construed as official government endorsement or approval of commercial ...Division EXECUTIVE SUMMARY High frequency (HF) links (2 to 30 MHz) are an alternative to the cost and tactical fragility of commercial satellite

Mechanical properties of ultra-thin HfO{sub 2} films studied by nano scratches tests

Energy Technology Data Exchange (ETDEWEB)

Fu, Wei-En; Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321, Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei; Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

2013-02-01

10-nm-thick atomic layer deposited HfO{sub 2} films were characterized in terms of wear resistance and indentation hardness to investigate the thermal annealing induced impacts on mechanical properties. The wear resistance of ultra-thin films at low loads was characterized using nano-scratch tests with an atomic force microscope. The depth of the nano-scratches decreases with increasing annealing temperature, indicating that the hardness of the annealed films increases with the annealing temperatures. Surface nanoindentation was also performed to confirm the nanoscratch test results. The hardness variation of the annealed films is due to the generation of HfSi{sub x}O{sub y} induced by the thermal annealing. X-ray photoelectron spectroscopy measurements proved that the hardness of formed HfSi{sub x}O{sub y} with increasing annealing temperatures. The existence of HfSi{sub x}O{sub y} broadens the interface, and causes the increase of the interfacial layer thickness. As a result, the surface hardness increases with the increasing HfSi{sub x}O{sub y} induced by the thermal annealing. - Highlights: ► Mechanical properties of HfO{sub 2} films were assessed by nano-scratch and indentation. ► Scratch depth of HfO{sub 2} films decreased with the increase of annealing temperatures. ► Nano-hardness of HfO{sub 2} films increased with the increase of annealing temperatures.

A live-trap and trapping technique for fossorial mammals

African Journals Online (AJOL)

mammals. G.C. Hickman. An effective live-trap was designed for Cryptomys hottentotus .... that there is an animal in the burrow system, and to lessen the likelihood of the .... the further testing and modification of existing trap types. Not only is it ...

Beta decomposition of (Hf/sub x/Zr/sub 1-x/)80Nb20 ternary alloys

International Nuclear Information System (INIS)

Jones, W.B.; Taggart, R.; Polonis, D.H.

1978-01-01

The processes of beta decomposition have been examined in ternary alloys of the form (Hf/sub x/Zr/sub 1-x/) 80 Nb 20 to determine the influence of Hf additions to a basic Zr 80 Nb 20 composition. In the chill cast condition, Hf additions have been found to decrease the temperature coefficient of electrical resistivity from a value of -0.0015%/K for the binary Zr 80 Nb 20 alloy to a value of -0.011%/K for a (Hf 50 Zr 50 ) 80 Nb 20 ternary alloy. This change is explained in terms of the bcc lattice instability typical of Ti, Zr, and Hf alloys. The Hf additions enhance the kinetics of omega-phase precipitation during aging at 648 K. The aging of a (Hf 05 Zr 95 ) 80 Nb 20 alloy for 12 h results in the precipitation of a high volume fraction of cuboidal shaped omega-phase particles. A phase separation which results in the formation of solute lean discs (β/sub l/) occurs together with the precipitation of the omega-phase. These discs formed both randomly within the matrix and heterogeneously along dislocations and at grain boundaries

Systems Tl2MoO4-E(MoO4)2, where E=Zr or Hf, and the crystal structure of Tl8Hf(MoO4)6

International Nuclear Information System (INIS)

Bazarov, B.G.; Bazarova, Ts.T.; Fedorov, K.N.; Bazarova, Zh.G.; Chimitova, O.D.; Klevtsova, R.F.; Glinskaya, L.A.

2006-01-01

Systems Tl 2 MoO 4 -E(MoO 4 ) 2 (E=Zr, Hf) were studied by X-ray diffraction, differential thermal analysis and IR spectroscopy. Formation of Tl 8 E(MoO 4 ) 6 and Tl 2 E(MoO 4 ) 2 compounds was established. Phase T-x diagrams of the Tl 2 MoO 4 -Zr(MoO 4 ) 2 system were constructed. Monocrystals were grown, and structure of Tl 8 Hf(MoO 4 ) 6 was studied. The compound is crystallized in monoclinic syngony with elementary cell parameters a=9.9688(6), b=18.830(1), c=7.8488(5) A, β=108.538(1) Deg, Z=2, sp. gr. C2/m. The isolated group [HfMo 6 O 24 ] 8- is responsible for fundamental fragment of the structure. Three varieties of crystallographically independent Tl-polyhedra fill space evenly between fragments [HfMo 6 O 24 ] 8- forming three-dimensional form [ru

Case Study: Trap Crop with Pheromone Traps for Suppressing Euschistus servus (Heteroptera: Pentatomidae in Cotton

Directory of Open Access Journals (Sweden)

P. G. Tillman

2012-01-01

Full Text Available The brown stink bug, Euschistus servus (Say, can disperse from source habitats, including corn, Zea mays L., and peanut, Arachis hypogaea L., into cotton, Gossypium hirsutum L. Therefore, a 2-year on-farm experiment was conducted to determine the effectiveness of a sorghum (Sorghum bicolor (L. Moench spp. bicolor trap crop, with or without Euschistus spp. pheromone traps, to suppress dispersal of this pest to cotton. In 2004, density of E. servus was lower in cotton fields with sorghum trap crops (with or without pheromone traps compared to control cotton fields. Similarly, in 2006, density of E. servus was lower in cotton fields with sorghum trap crops and pheromone traps compared to control cotton fields. Thus, the combination of the sorghum trap crop and pheromone traps effectively suppressed dispersal of E. servus into cotton. Inclusion of pheromone traps with trap crops potentially offers additional benefits, including: (1 reducing the density of E. servus adults in a trap crop, especially females, to possibly decrease the local population over time and reduce the overwintering population, (2 reducing dispersal of E. servus adults from the trap crop into cotton, and (3 potentially attracting more dispersing E. servus adults into a trap crop during a period of time when preferred food is not prevalent in the landscape.