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Sample records for heterostructure field effect

  1. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  2. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Verreck, Devin, E-mail: devin.verreck@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, 3001 Leuven (Belgium); Van de Put, Maarten; Sorée, Bart; Magnus, Wim [imec, Kapeldreef 75, 3001 Leuven (Belgium); Departement of Physics, Universiteit Antwerpen, 2020 Antwerpen (Belgium); Verhulst, Anne S.; Collaert, Nadine; Thean, Aaron [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2014-02-07

    Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement.

  3. Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

    Directory of Open Access Journals (Sweden)

    Mengchen Huang

    2015-06-01

    Full Text Available We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

  4. Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

    Science.gov (United States)

    Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2017-09-01

    The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

    Directory of Open Access Journals (Sweden)

    Buwen Cheng

    2013-05-01

    Full Text Available The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA and peak pairs analysis (PPA, respectively. The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.

  6. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  7. Elastic and piezoelectric fields around a quantum wire of zincblende heterostructures with interface elasticity effect

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    Ye, Wei; Liu, Yifei

    2018-04-01

    This work formulates the solutions to the elastic and piezoelectric fields around a quantum wire (QWR) with interface elasticity effect. Closed-form solutions to the piezoelectric potential field of zincblende QWR/matrix heterostructures grown along [111] crystallographic orientation are found and numerical results of InAs/InP heterostructures are provided as an example. The piezoelectric potential in the matrix depends on the interface elasticity, the radius and stiffness of the QWR. Our results indicate that interface elasticity can significantly alter the elastic and piezoelectric fields near the interface. Additionally, when the elastic property of the QWR is considered to be anisotropic in contrary to the common isotropic assumption, piezoelectric potentials are found to be distinct near the interface, but the deviations are negligible at positions far away from the interface.

  8. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.

    2015-01-07

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  9. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.; Hussain, Muhammad Mustafa

    2015-01-01

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  10. Adsorption and diffusion of lithium in a graphene/blue-phosphorus heterostructure and the effect of an external electric field.

    Science.gov (United States)

    Fan, Kaimin; Tang, Jing; Wu, Shiyun; Yang, Chengfu; Hao, Jiabo

    2016-12-21

    The adsorption and diffusion behaviors of lithium (Li) in a graphene/blue-phosphorus (G/BP) heterostructure have been investigated using a first principles method based on density functional theory (DFT). The effect of an external electric field on the adsorption and diffusion behaviors has also been investigated. The results show that the adsorption energy of Li on the graphene side of the G/BP heterostructure is higher than that on monolayer graphene, and Li adsorption on the BP side of the G/BP/Li system is slightly stronger than that on monolayer BP (BP/Li). The adsorption energy of Li reaches 2.47 eV, however, the energy barriers of Li diffusion decrease in the interlayer of the G/BP heterostructure. The results mentioned above suggest that the rate performance of the G/BP heterostructure is better than that of monolayer graphene. Furthermore, the adsorption energies of Li atoms in the three different most stable sites, i.e., H G , T P and H 1 sites, increase by about 0.49 eV, 0.26 eV, and 0.13 eV, respectively, as the electric field intensity reaches 0.6 V Å -1 . The diffusion energy barrier is significantly decreased by an external electric field. It is demonstrated that the external electric field can not only enhance the adsorption but can also modulate the diffusion barriers of Li atoms in the G/BP heterostructure.

  11. Investigation of the field dependent spin structure of exchange coupled magnetic heterostructures

    International Nuclear Information System (INIS)

    Gurieva, Tatiana

    2016-05-01

    This thesis describes the investigation of the field dependent magnetic spin structure of an antiferromagnetically (AF) coupled Fe/Cr heterostructure sandwiched between a hardmagnetic FePt buffer layer and a softmagnetic Fe top layer. The depth-resolved experimental studies of this system were performed via Magneto-optical Kerr effect (MOKE), Vibrating Sample Magnetometry (VSM) and various measuring methods based on nuclear resonant scattering (NRS) technique. Nucleation and evolution of the magnetic spiral structure in the AF coupled Fe/Cr multilayer structure in an azimuthally rotating external magnetic field were observed using NRS. During the experiment a number of time-dependent magnetic side effects (magnetic after-effect, domain-wall creep effect) caused by the non-ideal structure of a real sample were observed and later explained. Creation of the magnetic spiral structure in rotating external magnetic field was simulated using a one-dimensional micromagnetic model.The cross-sectional magnetic X-ray diffraction technique was conceived and is theoretically described in the present work. This method allows to determine the magnetization state of an individual layer in the magnetic heterostructure. It is also applicable in studies of the magnetic structure of tiny samples where conventional x-ray reflectometry fails.

  12. Topological properties and correlation effects in oxide heterostructures

    Science.gov (United States)

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  13. Giant magnetoelectric effect in pure manganite-manganite heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Paul, Sanjukta; Pankaj, Ravindra; Yarlagadda, Sudhakar; Majumdar, Pinaki; Littlewood, Peter B.

    2017-11-01

    Obtaining strong magnetoelectric couplings in bulk materials and heterostructures is an ongoing challenge. We demonstrate that manganite heterostructures of the form (Insulator) /(LaMnO3)(n)/Interface/(CaMnO3)(n)/(Insulator) show strong multiferroicity in magnetic manganites where ferroelectric polarization is realized by charges leaking from LaMnO3 to CaMnO3 due to repulsion. Here, an effective nearest-neighbor electron-electron (electron-hole) repulsion (attraction) is generated by cooperative electron-phonon interaction. Double exchange, when a particle virtually hops to its unoccupied neighboring site and back, produces magnetic polarons that polarize antiferromagnetic regions. Thus a striking giant magnetoelectric effect ensues when an external electrical field enhances the electron leakage across the interface.

  14. Upper critical field of Mo-Ni heterostructures

    International Nuclear Information System (INIS)

    Uher, C.; Watson, W.J.; Cohn, J.L.; Schuller, I.K.

    1985-12-01

    Upper critical field and its anisotropy have been measured on two very short wavelength Mo-Ni heterostructures of different degrees of perfection, lambda = 13.8A (disordered structure) and lambda = 16.6A (layered structure). In both cases the parallel critical field has an unexpected temperature dependence, a large and temperature dependent anisotropy, and over 60% enhancement over the Clogston-Chandrasekhar limit. Data are fit to the Werthamer-Helfand-Hohenberg theory and the spin-orbit scattering times are found to be 1.79 x 10 -13 s and 2 x 10 -13 s, respectively

  15. Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor.

    Science.gov (United States)

    Kim, Janghyuk; Mastro, Michael A; Tadjer, Marko J; Kim, Jihyun

    2017-06-28

    β-gallium oxide (β-Ga 2 O 3 ) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2 O 3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga 2 O 3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.

  16. MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

    Science.gov (United States)

    He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

    2017-01-01

    2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Out-of-plane strain and electric field tunable electronic properties and Schottky contact of graphene/antimonene heterostructure

    Science.gov (United States)

    Phuc, Huynh V.; Hieu, Nguyen N.; Hoi, Bui D.; Phuong, Le T. T.; Hieu, Nguyen V.; Nguyen, Chuong V.

    2017-12-01

    In this paper, the electronic properties of graphene/monolayer antimonene (G/m-Sb) heterostructure have been studied using the density functional theory (DFT). The effects of out-of-plane strain (interlayer coupling) and electric field on the electronic properties and Schottky contact of the G/m-Sb heterostructure are also investigated. The results show that graphene is bound to m-Sb layer by a weak van-der-Waals interaction with the interlayer distance of 3.50 Å and the binding energy per carbon atom of -39.62 meV. We find that the n-type Schottky contact is formed at the G/m-Sb heterostructure with the Schottky barrier height (SBH) of 0.60 eV. By varying the interlayer distance between graphene and the m-Sb layer we can change the n-type and p-type SBH at the G/m-Sb heterostructure. Especially, we find the transformation from n-type to p-type Schottky contact with decreasing the interlayer distance. Furthermore, the SBH and the Schottky contact could be controlled by applying the perpendicular electric field. With the positive electric field, electrons can easily transfer from m-Sb to graphene layer, leading to the transition from n-type to p-type Schottky contact.

  18. Modulation of band gap by an applied electric field in BN-based heterostructures

    Science.gov (United States)

    Luo, M.; Xu, Y. E.; Zhang, Q. X.

    2018-05-01

    First-principles density functional theory (DFT) calculations are performed on the structural and electronic properties of the SiC/BN van der Waals (vdW) heterostructures under an external electric field (E-field). Our results reveal that the SiC/BN vdW heterostructure has a direct band gap of 2.41 eV in the raw. The results also imply that electrons are likely to transfer from BN to SiC monolayer due to the deeper potential of BN monolayer. It is also observed that, by applying an E-field, ranging from -0.50 to +0.65 V/Å, the band gap decreases from 2.41 eV to zero, which presents a parabola-like relationship around 0.0 V/Å. Through partial density of states (PDOS) plots, it is revealed that, p orbital of Si, C, B, and N atoms are responsible for the significant variations of band gap. These obtained results predict that, the electric field tunable band gap of the SiC/BN vdW heterostructures carries potential applications for nanoelectronics and spintronic device applications.

  19. Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Bu, Yuyu [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan); Li, Liuan, E-mail: liliuan@mail.sysu.edu.cn [School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275 (China); Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan)

    2017-07-31

    Highlights: • AlGaN/GaN ISFETs were fabricated and evaluated with thermal oxidation treatment. • Sensitivity was improved to 57.7 mV/pH after 700 °C treatment. • Sensitivity became poor after 800 °C treatment. • The pure α-Al{sub 2}O{sub 3} crystal phase generated on the surface of the 700 °C treatment sample. • Ga{sub 2}O{sub 3} phase content in the metal oxide layer increased after 800 °C treatment. - Abstract: In this article, AlGaN/GaN heterostructure ion-sensitive field-effect transistors (ISFETs) were prepared and evaluated by thermal oxidation treatment on the AlGaN surface. The ISFETs were fabricated on the AlGaN/GaN heterostructure and then thermally oxidized with dry oxygen in 600, 700, and 800 °C, respectively. It indicates that the performance of the AlGaN/GaN heterostructure ISFETs, such as noise and sensitivity, has been improved owing to the thermal oxidation treatment process at different temperatures. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that after thermal oxidation treatment at different temperatures, hydroxide who possesses high surface state density will transfer to oxide owing to the higher chemical stability of the latter. Moreover, a crystalline α-Al{sub 2}O{sub 3} phase generated at 700 °C can not only provide a relatively smooth surface, but also improve the sensitivity to 57.7 mV/pH for the AlGaN/GaN heterostructure ISFETs, which is very close to the Nernstian limit.

  20. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    Science.gov (United States)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  1. Strain field mapping of dislocations in a Ge/Si heterostructure.

    Directory of Open Access Journals (Sweden)

    Quanlong Liu

    Full Text Available Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001 substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM. The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.

  2. Strain field mapping of dislocations in a Ge/Si heterostructure.

    Science.gov (United States)

    Liu, Quanlong; Zhao, Chunwang; Su, Shaojian; Li, Jijun; Xing, Yongming; Cheng, Buwen

    2013-01-01

    Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.

  3. Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ueda, Kohei; Pai, Chi-Feng; Tan, Aik Jun; Mann, Maxwell; Beach, Geoffrey S. D., E-mail: gbeach@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2016-06-06

    We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.

  4. Modulation of persistent magnetoresistance by piezo-strain effect in manganite-based heterostructures

    Science.gov (United States)

    Li, W.; Yan, H.; Chai, X. J.; Wang, S. H.; Dong, X. L.; Ren, L. X.; Chen, C. L.; Jin, K. X.

    2017-05-01

    Persistent magnetoresistance effects in the phase-separated Pr0.65(Ca0.25Sr0.75)0.35MnO3/SrTiO3 and Pr0.65(Ca0.25Sr0.75)0.35MnO3/0.7PbMg1/3Nb2/3O3-0.3PbTiO3 heterostructures under a low magnetic field are investigated. It is observed that the persistent magnetoresistance effects decrease with increasing temperatures and the values for the heterostructures on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 and SrTiO3 substrates are about 86.6% and 33.2% at 40 K, respectively. More interestingly, the applied electric field on the 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 substrate can suppress the persistent magnetoresistance effect, indicating that different energy landscapes can be dramatically modulated by the piezo-strain. These results are discussed in terms of the strain-induced competition in the ferromagnetic state and the charge-ordering phase by the energy scenario, which provide a promising approach for designing devices of electric-magnetic memories in all-oxide heterostructures.

  5. High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

    Science.gov (United States)

    Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

    2017-08-01

    Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

  6. Temperature dependence of electric field tunable ferromagnetic resonance lineshape in multiferroic heterostructure

    Directory of Open Access Journals (Sweden)

    Fenglong Wang

    2016-11-01

    Full Text Available Herein, we experimentally investigate the effect of temperature on the electric field tunable ferromagnetic resonance (FMR in a ferroelectric/ferromagnetic heterostructure, and demonstrate the tuning of abnormal change in FMR using the polarization of the ferroelectric layer above 200 K. The FMR was found to be almost unchanged under different electric field strength at 100 K owing to frozen polarization, which causes extremely weak magnetoelectric coupling. More interestingly, negative effective linewidth was observed when an electric field greater than 10 kV/cm was applied above 220 K. The simultaneous electrical control of magnetization and its damping via FMR based on linear magnetoelectric coupling are directly relevant to use of composite multiferroics for a wide range of devices.

  7. The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Lv, Yuanjie; Feng, Zhihong; Gu, Guodong; Han, Tingting; Yin, Jiayun; Liu, Bo; Cai, Shujun; Lin, Zhaojun; Ji, Ziwu; Zhao, Jingtao

    2014-01-01

    The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3 nm and 6 nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barrier thickness. Moreover, using the measured capacitance-voltage and current-voltage characteristics of the fabricated heterostructure field-effect transistors (HFETs) with different Schottky areas on the two heterostuctures, the variations of electron mobility with different gate biases were investigated. Due to enhanced IFR scattering, the influence of polarization Coulomb field (PCF) scattering on electron mobility was found to decrease with increasing AlN barrier layer thickness. However, the PCF scattering remained an important scattering mechanism in the AlN/GaN HFETs.

  8. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    International Nuclear Information System (INIS)

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-01-01

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  9. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Barnali; Sarkar, Utpal, E-mail: utpalchemiitkgp@yahoo.com

    2016-10-20

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  10. Shallow acceptors in Ge/GeSi heterostructures with quantum wells in magnetic field

    International Nuclear Information System (INIS)

    Aleshkin, V.Ya.; Antonov, A.V.; Veksler, D.B.; Gavrilenko, V.I.; Erofeeva, I.V.; Ikonnikov, A.V.; Kozlov, D.V.; Spirin, K.E.; Kuznetsov, O.A.

    2005-01-01

    One investigated both theoretically and experimentally into shallow acceptors in Ge/GeSi heterostructures with quantum wells (QW) in a magnetic field. It is shown that alongside with lines of cyclotron resonance in magnetoabsorption spectra one observes transitions from the ground state of acceptor to the excited ones associated with the Landau levels from the first and the second subbands of dimensional quantization, and resonance caused by ionization of A + -centres. To describe impurity transitions in Ge/GeSi heterostructures with QW in a magnetic field and to interpret the experiment results in detail one uses numerical method of calculation based on expansion of wave function of acceptor in terms of basis of wave functions of holes in QW in the absence of magnetic field [ru

  11. First-principles calculations on strain and electric field induced band modulation and phase transition of bilayer WSe2sbnd MoS2 heterostructure

    Science.gov (United States)

    Lei, Xiang; Yu, Ke

    2018-04-01

    A purposeful modulation of physical properties of material via change external conditions has long captured people's interest and can provide many opportunities to improve the specific performance of electronic devices. In this work, a comprehensive first-principles survey was performed to elucidate that the bandgap and electronic properties of WSe2sbnd MoS2 heterostructure exhibited unusual response to exterior strain and electric field in comparison with pristine structures. It demonstrates that the WSe2sbnd MoS2 is a typical type-II heterostructure, and thus the electron-hole pairs can be effectively spatially separated. The external effects can trigger the electronic phase transition from semiconducting to metallic state, which originates from the internal electric evolution induced energy-level shift. Interestingly, the applied strain shows no direction-depended character for the modulation of bandgap of WSe2sbnd MoS2 heterostructure, while it exists in the electric field tuning processes and strongly depends on the direction of the electric field. Our findings elucidate the tunable electronic property of bilayer WSe2sbnd MoS2 heterostructure, and would provide a valuable reference to design the electronic nanodevices.

  12. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

    Science.gov (United States)

    Yan, Xiaodong; Esqueda, Ivan S.; Ma, Jiahui; Tice, Jesse; Wang, Han

    2018-01-01

    In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

  13. Proximity effects in topological insulator heterostructures

    International Nuclear Information System (INIS)

    Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

    2013-01-01

    Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

  14. Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yingxia Yu

    2013-09-01

    Full Text Available Using the Quasi-Two-Dimensional (quasi-2D model, the current-voltage (I-V characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs with different gate length were simulated based on the measured capacitance-voltage (C-V characteristics and I-V characteristics. By analyzing the simulation results, we found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field scattering, and the difference of the electron mobility mostly caused by the polarization Coulomb field scattering can reach up to 1829.9 cm2/V·s for the prepared AlGaN/AlN/GaN HFET. In addition, it was also found that when the two-dimension electron gas (2DEG sheet density is modulated by the drain-source bias, the electron mobility appears peak with the variation of the 2DEG sheet density, and the ratio of gate length to drain-source distance is smaller, the 2DEG sheet density corresponding to the peak point is higher.

  15. Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

    Science.gov (United States)

    Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Kim, Seong Dae; Ahn, Jong-Hyun

    2015-12-01

    Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (Ion/Ioff) of up to ˜103, with a current density of 102 A cm-2. We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

  16. Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

    International Nuclear Information System (INIS)

    Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Dae Kim, Seong; Ahn, Jong-Hyun

    2015-01-01

    Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (I on /I off ) of up to ∼10 3 , with a current density of 10 2 A cm −2 . We also observed significant dependence of Schottky barrier height Δφ b on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier. (paper)

  17. Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Tan, W.S.; Parbrook, P.J.; Hill, G.; Airey, R.J.; Houston, P.A.

    2002-01-01

    Different dielectrics were used for post-processing surface passivation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and the resulting electrical characteristics examined. An increase in the maximum drain current of approximately 25% was observed after Si 3 N 4 and SiO 2 deposition and ∼15% for annealed SiO on AlGaN/GaN HFETs. In all cases, the passivation was found to increase the gate leakage current with an observed reduction in the leakage activation energy. However, the rise in gate leakage current was least for SiO. The plasma enhanced chemical vapour deposition method was found not to contribute to the passivation mechanism, whilst the presence of Si appears to be an important factor. (author)

  18. Multilevel resistance switching effect in Au/La2/3Ba1/3MnO3/Pt heterostructure manipulated by external fields

    Science.gov (United States)

    Wen, Jiahong; Zhao, Xiaoyu; Li, Qian; Zhang, Sheng; Wang, Dunhui; Du, Youwei

    2018-04-01

    Multilevel resistance switching (RS) effect has attracted more and more attention due to its promising potential for the increase of storage density in memory devices. In this work, the transport properties are investigated in an Au/La2/3Ba1/3MnO3 (LBMO)/Pt heterostructure. Taking advantage of the strong interplay among the spin, charge, orbital and lattice of LBMO, the Au/LBMO/Pt device can exhibit bipolar RS effect and magnetoresistance effect simultaneously. Under the coaction of electric field and magnetic field, four different resistance states are achieved in this device. These resistance states show excellent repeatability and retentivity and can be switched between any two states, which suggest the potential applications in the multilevel RS memory devices with enhanced storage density.

  19. Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

    International Nuclear Information System (INIS)

    Pooth, Alexander; Uren, Michael J.; Cäsar, Markus; Kuball, Martin; Martin, Trevor

    2015-01-01

    Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs

  20. Electric field modulation of electronic structures in InSe and black phosphorus heterostructure

    Science.gov (United States)

    Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Xia, Congxin; Wu, Meng; Wang, Hui; Cen, Yu-lang; Pan, Shu-hang

    2018-01-01

    The electronic structures of InSe and black phosphorus (BP) heterostructure modulated by an external electric field (E⊥) have been investigated based on first-principles calculations. We find that InSe/BP has type II band offset with a direct band gap of 0.39 eV, and the electrons (holes) are spatially located in InSe (BP) layer. Meanwhile, the band structures of InSe/BP can be effectively modulated by E⊥. The band gap shows linear variation with E⊥ and its maximum of 0.69 eV is observed when E⊥ is 0.4 V / Å. The InSe/BP experiences a transition from semiconductor to metal with E⊥ of -0.6 and 0.8 V / Å. The band offsets are also modulated by E⊥, resulting in different spatial distribution of electron-hole pairs. Most importantly, the high carrier mobility can be preserved well under E⊥. Our results show that the novel InSe/BP heterostructure has great potential application in electronic and optoelectronic devices.

  1. Iron-YBCO heterostructures and their application for trapped field superconducting motor

    International Nuclear Information System (INIS)

    Granados, X; Bartolome, E; Obradors, X; Tornes, M; Rodrigues, L; Gawalek, W; McCulloch, M; Hughes, D Dew; Campbell, A; Coombs, T; Ausloos, M; Cloots, R

    2006-01-01

    In this work we report on the magnetic behavior of the heterostructures formed by bulk based YBCO rings and ferromagnetic yoke. The magnetization cycle has been performed by an In-Field Hall Mapping technique. A video-like recording of the magnetization process makes it possible to obtain the magnetization of selected areas. The current flowing through the superconducting rings can be deduced from the magnetic field maps. The displacement of the peak of magnetization due to the flux reversal produced by the magnetization of the yoke is also considered. These hybrid heterostructures formed by ferromagnetic and superconducting material have been applied in the construction of the rotor for a brushless AC motor. The design and construction of this machine was carried out within the framework of the TMR Network SUPERMACHINES. The rotor has been designed in a quadrupolar configuration by cutting large YBCO 'window frames' from seeded melt-textured single domain YBCO pellets. This rotor has been coupled to a conventional stator of copper coils wound on an iron armature. The stator can be excited both in bipolar or quadrupolar mode. We report on the behaviour of the motor after a field cooling process when excited in quadrupolar mode

  2. Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

    Science.gov (United States)

    Yang, Y. T.; Li, J.; Peng, X. L.; Wang, X. Q.; Wang, D. H.; Cao, Q. Q.; Du, Y. W.

    2016-02-01

    We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-HC or low-HC) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices.

  3. Iron-YBCO heterostructures and their application for trapped field superconducting motor

    Energy Technology Data Exchange (ETDEWEB)

    Granados, X [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus U.A. Barcelona, 08193 Bellaterra (Spain); Bartolome, E [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus U.A. Barcelona, 08193 Bellaterra (Spain); Obradors, X [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus U.A. Barcelona, 08193 Bellaterra (Spain); Tornes, M [ETSE-UAB, Barcelona (Spain); Rodrigues, L [UNL, Lisbon (Portugal); Gawalek, W [IPHT, Jena (Germany); McCulloch, M [Department Engineering Science, University of Oxford, Oxford (United Kingdom); Hughes, D Dew [Department Engineering Science, University of Oxford, Oxford (United Kingdom); Campbell, A [IRC-UCAM, Cambridge (United Kingdom); Coombs, T [IRC-UCAM, Cambridge (United Kingdom); Ausloos, M [SUPRATEC, Liege (Belgium); Cloots, R [SUPRATEC, Liege (Belgium)

    2006-06-01

    In this work we report on the magnetic behavior of the heterostructures formed by bulk based YBCO rings and ferromagnetic yoke. The magnetization cycle has been performed by an In-Field Hall Mapping technique. A video-like recording of the magnetization process makes it possible to obtain the magnetization of selected areas. The current flowing through the superconducting rings can be deduced from the magnetic field maps. The displacement of the peak of magnetization due to the flux reversal produced by the magnetization of the yoke is also considered. These hybrid heterostructures formed by ferromagnetic and superconducting material have been applied in the construction of the rotor for a brushless AC motor. The design and construction of this machine was carried out within the framework of the TMR Network SUPERMACHINES. The rotor has been designed in a quadrupolar configuration by cutting large YBCO 'window frames' from seeded melt-textured single domain YBCO pellets. This rotor has been coupled to a conventional stator of copper coils wound on an iron armature. The stator can be excited both in bipolar or quadrupolar mode. We report on the behaviour of the motor after a field cooling process when excited in quadrupolar mode.

  4. All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

    Science.gov (United States)

    Dankert, André; Dash, Saroj

    Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing. Its fundamental concepts (creation, manipulation and detection of spin polarization) have been demonstrated in semiconductors and spin transistor structures using electrical and optical methods. However, an unsolved challenge is the realization of all-electrical methods to control the spin polarization in a transistor manner at ambient temperatures. Here we combine graphene and molybdenum disulfide (MoS2) in a van der Waals heterostructure to realize a spin field-effect transistor (spin-FET) at room temperature. These two-dimensional crystals offer a unique platform due to their contrasting properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in MoS2. The gate-tuning of the Schottky barrier at the MoS2/graphene interface and MoS2 channel yields spins to interact with high SOC material and allows us to control the spin polarization and lifetime. This all-electrical spin-FET at room temperature is a substantial step in the field of spintronics and opens a new platform for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures.

  5. M = Mo, W; X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun

    2018-04-16

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

  6. Electric-field tunable perpendicular magnetic anisotropy in tetragonal Fe4N/BiFeO3 heterostructures

    Science.gov (United States)

    Yin, Li; Wang, Xiaocha; Mi, Wenbo

    2017-07-01

    Electric field control on perpendicular magnetic anisotropy (PMA) is indispensable for spintronic devices. Herewith, in tetragonal Fe4N/BiFeO3 heterostructures with the FeAFeB/Fe-O2 interface, PMA in each Fe4N layer, not merely interfacial layers, is modulated by the electric field, which is attributed to the broken spin screening of the electric field in highly spin-polarized Fe4N. Moreover, the periodical dx y+dy z+dz2 and dx y+dx2-y2 orbital-PMA oscillation enhances the interactions between adjacent FeAFeB and (FeB)2N atomic layers, which benefits the electric field modulation on PMA in the whole Fe4N atomic layers. The electric-field control on PMA in Fe4N/BiFeO3 heterostructures is favored by the electric-field-lifted potential in Fe4N.

  7. Tuning on-off current ratio and field-effect mobility in a MoS(2)-graphene heterostructure via Schottky barrier modulation.

    Science.gov (United States)

    Shih, Chih-Jen; Wang, Qing Hua; Son, Youngwoo; Jin, Zhong; Blankschtein, Daniel; Strano, Michael S

    2014-06-24

    Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.

  8. Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

    International Nuclear Information System (INIS)

    Ambrosch, K.-E.

    1985-01-01

    Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

  9. Control of tunneling in heterostructures

    International Nuclear Information System (INIS)

    Volokhov, V M; Tovstun, C A; Ivlev, B

    2007-01-01

    A tunneling current between two rectangular potential wells can be effectively controlled by applying an external ac field. A variation of the ac frequency by 10% may lead to the suppression of the tunneling current by two orders of magnitude, which is a result of quantum interference under the action of the ac field. This effect of destruction of tunneling can be used as a sensitive control of tunneling current across nanosize heterostructures

  10. Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Gregušová, D., E-mail: Dagmar.Gregusova@savba.sk [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Gucmann, F.; Kúdela, R. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Mičušík, M. [Polymer Institute of Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84541 (Slovakia); Stoklas, R.; Válik, L. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Greguš, J. [Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynská dolina, Bratislava SK-84248 (Slovakia); Blaho, M. [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava SK-84104 (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology STU, Ilkovičova 3, Bratislava SK-81219 (Slovakia)

    2017-02-15

    Highlights: • AlGaAs/InGaAs/GaAs-based metal oxide semiconductor transistors-MOSHFET. • Thin Al-layer deposited in-situ and oxidize in air – gate insulator. • MOSHFET vs HFET transistor properties, density of traps evaluated. - Abstract: GaAs-based heterostructures exhibit excellent carrier transport properties, mainly the high carrier velocity. An AlGaAs-GaAs heterostructure field-effect transistor (HFET) with an InGaAs channel was prepared using metal-organic chemical vapor deposition (MOVPE). An AlOx layer was formed on the AlGaAs barrier layer by the air-assisted oxidation of a thin Al layer deposited in-situ in an MOVPE reactor immediately after AlGaAs/InGaAs growth. The HFETs and MOSHFETs exhibited a very low trap state density in the order of 10{sup 11} cm{sup −2} eV{sup −1}. Capacitance measurement yielded no significant difference between the HFET and MOSHFET structures. The formation of an AlOx layer modified the surface by partially eliminating surface states that arise from Ga-and As-based native oxides. The presence of an AlOx layer reflected in a reduced gate leakage current, which was evidenced by the two-terminal transistor measurement. Presented preparation procedure and device properties show great potential of AlGaAs/InGaAs-based MOSHFETs.

  11. Tunable band gaps in graphene/GaN van der Waals heterostructures

    International Nuclear Information System (INIS)

    Huang, Le; Kang, Jun; Li, Yan; Li, Jingbo; Yue, Qu

    2014-01-01

    Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å  − 1 . (paper)

  12. Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.

    Science.gov (United States)

    Zan, Wenyan; Geng, Wei; Liu, Huanxiang; Yao, Xiaojun

    2016-01-28

    Vertical heterostructures of MoS2/h-BN/graphene have been successfully fabricated in recent experiments. Using first-principles analysis, we show that the structural and electronic properties of such vertical heterostructures are sensitive to applied vertical electric fields and strain. The applied electric field not only enhances the interlayer coupling but also linearly controls the charge transfer between graphene and MoS2 layers, leading to a tunable doping in graphene and controllable Schottky barrier height. Applied biaxial strain could weaken the interlayer coupling and results in a slight shift of graphene's Dirac point with respect to the Fermi level. It is of practical importance that the tunable electronic properties by strain and electric fields are immune to the presence of sulfur vacancies, the most common defect in MoS2.

  13. Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field

    Science.gov (United States)

    Li, Wei; Wang, Tian-Xing; Dai, Xian-Qi; Wang, Xiao-Long; Ma, Ya-Qiang; Chang, Shan-Shan; Tang, Ya-Nan

    2017-04-01

    Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics.

  14. A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

    Science.gov (United States)

    Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

    2018-01-01

    A new method to determine the two-dimensional electron gas (2DEG) density distribution of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) after the Si3N4 passivation process has been presented. Detailed device characteristics were investigated and better transport properties have been observed for the passivated devices. The strain variation and the influence of the surface trapping states were analyzed. By using the polarization Coulomb field (PCF) scattering theory, the 2DEG density after passivation was both quantitively and qualitatively determined, which has been increased by 45% under the access regions and decreased by 2% under the gate region.

  15. Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure

    Science.gov (United States)

    Filatov, E. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

    2012-02-01

    The kinetics of the radiative recombination of photoexcited electrons and holes for a spatially direct transition in a ZnSe/BeTe type II heterostructure in an external electric field has been analyzed. A strong decrease (more than two orders of magnitude) in the photoluminescence intensity, as well as a decrease in the duration of the relaxation of the direct transition, is observed when the electric field is applied. The energy levels and wavefunctions of electrons and holes in the ZnSe/BeTe heterostructure subjected to the electric field have been numerically calculated. It has been shown that the observed decrease in the photoluminescence intensity and duration of the relaxation of the direct transition is due to both an increase in the radiative recombination time and an increase in the rate of escape of photoexcited holes from the above-barrier level in the ZnSe layer to the BeTe layer.

  16. Quantum and field effects of oxide heterostructures

    DEFF Research Database (Denmark)

    Trier, Felix

    . In these multi-plexed devices, several inputs aretranslated into several outputs through the multiple physical functionalities.A highly prominent example of such an oxide interface is the one between LaAlO3 and SrTiO3. Although both LaAlO3 and SrTiO3 in the bulk are electrically insulating and non-magnetic......, their interface nonetheless shows attractive properties such as metallic conductivity, superconductivity and ferro magnetism.This thesis will provide an extensive review of the literature concerning the interface metal found in LaAlO3/SrTiO3 as well as in other SrTiO3-based hetero structures. Through this review...... in two different SrTiO3-based heterostructures. Here, it is shown that the interface between amorphous-LaAlO3 and SrTiO3 is superconducting with a larger critical transition temperature than that in LaAlO3/SrTiO3. For γ-Al2O3/SrTiO3 it is shown that non-volatile bipolar resistance switching is possible...

  17. Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Ao, Jin-Ping; Zhu, Huichao

    2016-01-01

    An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl 4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10 −9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. (paper)

  18. Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Yu Ying-Xia; Lin Zhao-Jun; Luan Chong-Biao; Yang Ming; Wang Yu-Tang; Lü Yuan-Jie; Feng Zhi-Hong

    2014-01-01

    By making use of the quasi-two-dimensional (quasi-2D) model, the current–voltage (I–V) characteristics of In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance–voltage (C–V) characteristics and I–V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm 2 /V·s for the prepared In 0.18 Al 0.82 N/AlN/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain–source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Rashba effect and enriched spin-valley coupling in Ga X /M X2 (M = Mo, W; X = S, Se, Te) heterostructures

    Science.gov (United States)

    Zhang, Qingyun; Schwingenschlögl, Udo

    2018-04-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional Ga X /MX 2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between Ga X and MX 2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K' valleys (out-of-plane spin direction) makes Ga X /MX 2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

  20. Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Matulionis, Arvydas

    2013-01-01

    The problems in the realm of nitride heterostructure field-effect transistors (HFETs) are discussed in terms of a novel fluctuation–dissipation-based approach impelled by a recent demonstration of strong correlation of hot-electron fluctuations with frequency performance and degradation of the devices. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than the conventional heat contained mainly in the acoustic phonon mode. We treat the heat dissipation problem in terms of the hot-phonon lifetime responsible for the conversion of the non-migrant hot phonons into migrant acoustic modes and other vibrations. The lifetime is measured over a wide range of electron density and supplied electric power. The optimal conditions for the dissipation of the LO-mode heat are associated with the plasmon-assisted disintegration of hot phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor phase noise and transistor reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs take place inside the electron density window where the resonant plasmon-assisted ultrafast dissipation of the LO-mode heat comes into play. A novel heterostructure design for the possible improvement of HFET performance is proposed, implemented and tested. (invited review)

  1. Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yan Liu

    2017-08-01

    Full Text Available Using a suitable dual-gate structure, the source-to-drain resistance (RSD of AlGaN/AlN/GaN heterostructure field-effect transistor (HFET with varying gate position has been studied at room temperature. The theoretical and experimental results have revealed a dependence of RSD on the gate position. The variation of RSD with the gate position is found to stem from the polarization Coulomb field (PCF scattering. This finding is of great benefit to the optimization of the performance of AlGaN/AlN/GaN HFET. Especially, when the AlGaN/AlN/GaN HFET works as a microwave device, it is beneficial to achieve the impedance matching by designing the appropriate gate position based on PCF scattering.

  2. Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

    Science.gov (United States)

    Zhang, Fang; Li, Wei; Ma, Yaqiang; Dai, Xianqi

    2018-03-01

    Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their single components. The effects of external electric field (Eext) on the electronic structures of monolayer SnS2 with graphene hybrid heterobilayers are studied by using the first-principle calculations. It is demonstrated that the intrinsic electronic properties of SnS2 and graphene are quite well preserved due to the weak van der Waals (vdW) interactions. We find that the n-type Schottky contacts with the significantly small Schottky barrier are formed at the graphene/SnS2 interface. In the graphene/SnS2 heterostructure, the vertical Eext can control not only the Schottky barriers (n-type and p-type) but also contact types (Schottky contact or Ohmic contact) at the interface. The present study would open a new avenue for application of ultrathin graphene/SnS2 heterostructures in future nano- and optoelectronics.

  3. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures.

    Science.gov (United States)

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-03-08

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

  4. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    Science.gov (United States)

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices.

  5. Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

    Energy Technology Data Exchange (ETDEWEB)

    Rychetsky, Monir, E-mail: monir.rychetsky@physik.tu-berlin.de; Avinc, Baran; Wernicke, Tim; Bellmann, Konrad; Sulmoni, Luca [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Koslow, Ingrid; Rass, Jens; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Hoffmann, Veit; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Wild, Johannes; Zweck, Josef [Fakultät für Physik, University of Regensburg, Regensburg (Germany); Witzigmann, Bernd [Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel (Germany)

    2016-03-07

    The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells. In this paper, we propose a new approach to determine these fields by capacitance-voltage measurements (CVM). Sheet charges generated by a change of the microscopic polarization at heterointerfaces influence the charge distribution in PIN junctions and therefore the depletion width and the capacitance. We show that it is possible to determine the strength and direction of the internal fields by comparing the depletion widths of two PIN junctions, one influenced by internal polarization fields and one without as a reference. For comparison, we conducted coupled Poisson/carrier transport simulations on the CVM of the polarization-influenced sample. We also demonstrate the feasibility and limits of the method by determining the fields in GaN/InGaN and GaN/AlGaN double heterostructures on (0001) c-plane grown by metal organic vapor phase epitaxy and compare both evaluation methods. The method yields (−0.50 ± 0.07) MV/cm for In{sub 0.08}Ga{sub 0.92}N/GaN, (0.90 ± 0.13) MV/cm for Al{sub 0.18}Ga{sub 0.82}N/GaN, and (2.0 ± 0.3) MV/cm for Al{sub 0.31}Ga{sub 0.69}N/GaN heterostructures.

  6. Electric field tuning of magnetism in heterostructure of yttrium iron garnet film/lead magnesium niobate-lead zirconate titanate ceramic

    Science.gov (United States)

    Lian, Jianyun; Ponchel, Freddy; Tiercelin, Nicolas; Chen, Ying; Rémiens, Denis; Lasri, Tuami; Wang, Genshui; Pernod, Philippe; Zhang, Wenbin; Dong, Xianlin

    2018-04-01

    In this paper, the converse magnetoelectric (CME) effect by electric field tuning of magnetization in an original heterostructure composed of a polycrystalline yttrium iron garnet (YIG) film and a lead magnesium niobate-lead zirconate titanate (PMN-PZT) ceramic is presented. The magnetic performances of the YIG films with different thicknesses under a DC electric field applied to the PMN-PZT ceramics and a bias magnetic field are investigated. All the magnetization-electric field curves are found to be in good agreement with the butterfly like strain curve of the PMN-PZT ceramic. Both the sharp deformation of about 2.5‰ of PMN-PZT and the easy magnetization switching of YIG are proposed to be the reasons for the strongest CME interaction in the composite at the small electric coercive field of PMN-PZT (4.1 kV/cm) and the small magnetic coercive field of YIG (20 Oe) where the magnetic susceptibility reaches its maximum value. A remarkable CME coefficient of 3.1 × 10-7 s/m is obtained in the system with a 600 nm-thick YIG film. This heterostructure combining multiferroics and partially magnetized ferrite concepts is able to operate under a small or even in the absence of an external bias magnetic field and is more compact and power efficient than the traditional magnetoelectric devices.

  7. Graphene-Nanodiamond Heterostructures and their application to High Current Devices

    Science.gov (United States)

    Zhao, Fang; Vrajitoarea, Andrei; Jiang, Qi; Han, Xiaoyu; Chaudhary, Aysha; Welch, Joseph O.; Jackman, Richard B.

    2015-01-01

    Graphene on hydrogen terminated monolayer nanodiamond heterostructures provides a new way to improve carrier transport characteristics of the graphene, offering up to 60% improvement when compared with similar graphene on SiO2/Si substrates. These heterostructures offers excellent current-carrying abilities whilst offering the prospect of a fast, low cost and easy methodology for device applications. The use of ND monolayers is also a compatible technology for the support of large area graphene films. The nature of the C-H bonds between graphene and H-terminated NDs strongly influences the electronic character of the heterostructure, creating effective charge redistribution within the system. Field effect transistors (FETs) have been fabricated based on this novel herterostructure to demonstrate device characteristics and the potential of this approach. PMID:26350107

  8. A shear-mode magnetoelectric heterostructure for harvesting external magnetic field energy

    Science.gov (United States)

    He, Wei; Zhang, Jitao; Lu, Yueran; Yang, Aichao; Qu, Chiwen; Yuan, Shuai

    2017-03-01

    In this paper, a magnetoelectric (ME) energy harvester is presented for scavenging external magnetic field energy. The proposed heterostructure consists of a Terfenol-D plate, a piezoelectric PZT5H plate, a NdFeB magnet, and two concentrators. The external magnetic field is concentrated to the Terfenol-D plate and the PZT5H plate working in shear-mode, which can potentially increase the magnetoelectric response. Experiments have been performed to verify the feasibility of the harvester. Under the magnetic field of 0.6 Oe, the device produces a RMS voltage of 0.53 V at the resonant frequency of 32.6 kHz. The corresponding output power reaches 44.96 μW across a 3.1 kΩ matching resistor.

  9. Electron scattering times in ZnO based polar heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Falson, J., E-mail: j.falson@fkf.mpg.de [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Kozuka, Y. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Smet, J. H. [Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Arima, T. [Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  10. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  11. Electric-field tunable spin waves in PMN-PT/NiFe heterostructure: Experiment and micromagnetic simulations

    Energy Technology Data Exchange (ETDEWEB)

    Ziȩtek, Slawomir, E-mail: zietek@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Chȩciński, Jakub [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Al. Mickiewicza 30, 30-059 Kraków (Poland); Frankowski, Marek; Skowroński, Witold; Stobiecki, Tomasz [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland)

    2017-04-15

    We present a comprehensive theoretical and experimental study of voltage-controlled standing spin waves resonance (SSWR) in PMN-PT/NiFe multiferroic heterostructures patterned into microstrips. A spin-diode technique was used to observe ferromagnetic resonance (FMR) mode and SSWR in NiFe strip mechanically coupled with a piezoelectric substrate. Application of an electric field to a PMN-PT creates a strain in permalloy and thus shifts the FMR and SSWR fields due to the magnetostriction effect. The experimental results are compared with micromagnetic simulations and a good agreement between them is found for dynamics of FMR and SSWR with and without electric field. Moreover, micromagnetic simulations enable us to discuss the amplitude and phase spatial distributions of FMR and SSWR modes, which are not directly observable by means of spin diode detection technique.

  12. Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures.

    Science.gov (United States)

    Shin, Yong Seon; Lee, Kiyoung; Kim, Young Rae; Lee, Hyangsook; Lee, I Min; Kang, Won Tae; Lee, Boo Heung; Kim, Kunnyun; Heo, Jinseong; Park, Seongjun; Lee, Young Hee; Yu, Woo Jong

    2018-03-01

    Vertical integration of 2D layered materials to form van der Waals heterostructures (vdWHs) offers new functional electronic and optoelectronic devices. However, the mobility in vertical carrier transport in vdWHs of vertical field-effect transistor (VFET) is not yet investigated in spite of the importance of mobility for the successful application of VFETs in integrated circuits. Here, the mobility in VFET of vdWHs under different drain biases, gate biases, and metal work functions is first investigated and engineered. The traps in WSe 2 are the main source of scattering, which influences the vertical mobility and three distinct transport mechanisms: Ohmic transport, trap-limited transport, and space-charge-limited transport. The vertical mobility in VFET can be improved by suppressing the trap states by raising the Fermi level of WSe 2 . This is achieved by increasing the injected carrier density by applying a high drain voltage, or decreasing the Schottky barrier at the graphene/WSe 2 and metal/WSe 2 junctions by applying a gate bias and reducing the metal work function, respectively. Consequently, the mobility in Mn vdWH at +50 V gate voltage is about 76 times higher than the initial mobility of Au vdWH. This work enables further improvements in the VFET for successful application in integrated circuits. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

    Science.gov (United States)

    Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

    2018-06-01

    Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

  14. Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures.

    Science.gov (United States)

    Wang, J J; Hu, J M; Yang, T N; Feng, M; Zhang, J X; Chen, L Q; Nan, C W

    2014-04-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.

  15. Tunable emergent heterostructures in a prototypical correlated metal

    Science.gov (United States)

    Fobes, D. M.; Zhang, S.; Lin, S.-Z.; Das, Pinaki; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Harriger, L. W.; Ehlers, G.; Podlesnyak, A.; Bewley, R. I.; Sazonov, A.; Hutanu, V.; Ronning, F.; Batista, C. D.; Janoschek, M.

    2018-05-01

    At the interface between two distinct materials, desirable properties, such as superconductivity, can be greatly enhanced1, or entirely new functionalities may emerge2. Similar to in artificially engineered heterostructures, clean functional interfaces alternatively exist in electronically textured bulk materials. Electronic textures emerge spontaneously due to competing atomic-scale interactions3, the control of which would enable a top-down approach for designing tunable intrinsic heterostructures. This is particularly attractive for correlated electron materials, where spontaneous heterostructures strongly affect the interplay between charge and spin degrees of freedom4. Here we report high-resolution neutron spectroscopy on the prototypical strongly correlated metal CeRhIn5, revealing competition between magnetic frustration and easy-axis anisotropy—a well-established mechanism for generating spontaneous superstructures5. Because the observed easy-axis anisotropy is field-induced and anomalously large, it can be controlled efficiently with small magnetic fields. The resulting field-controlled magnetic superstructure is closely tied to the formation of superconducting6 and electronic nematic textures7 in CeRhIn5, suggesting that in situ tunable heterostructures can be realized in correlated electron materials.

  16. Nanometal Skin of Plasmonic Heterostructures for Highly Efficient Near-Field Scattering Probes

    Science.gov (United States)

    Zito, Gianluigi; Rusciano, Giulia; Vecchione, Antonio; Pesce, Giuseppe; di Girolamo, Rocco; Malafronte, Anna; Sasso, Antonio

    2016-08-01

    In this work, atomic force microscopy probes are functionalized by virtue of self-assembling monolayers of block copolymer (BCP) micelles loaded either with clusters of silver nanoparticles or bimetallic heterostructures consisting of mixed species of silver and gold nanoparticles. The resulting self-organized patterns allow coating the tips with a sort of nanometal skin made of geometrically confined nanoislands. This approach favors the reproducible engineering and tuning of the plasmonic properties of the resulting structured tip by varying the nanometal loading of the micelles. The newly conceived tips are applied for experiments of tip-enhanced Raman scattering (TERS) spectroscopy and scattering-type scanning near-field optical microscopy (s-SNOM). TERS and s-SNOM probe characterizations on several standard Raman analytes and patterned nanostructures demonstrate excellent enhancement factor with the possibility of fast scanning and spatial resolution <12 nm. In fact, each metal nanoisland consists of a multiscale heterostructure that favors large scattering and near-field amplification. Then, we verify the tips to allow challenging nongap-TER spectroscopy on thick biosamples. Our approach introduces a synergistic chemical functionalization of the tips for versatile inclusion and delivery of plasmonic nanoparticles at the tip apex, which may promote the tuning of the plasmonic properties, a large enhancement, and the possibility of adding new degrees of freedom for tip functionalization.

  17. Characterization of GaAs and hetero-structures of GaAs-(AlGa)As films, by Hall effect

    International Nuclear Information System (INIS)

    Diniz, R.P.

    1989-08-01

    Hall effect measurements were performed on a series of semiconductor gallium arsenide (GaAs) films, intentionally or unitentionally doped, grown by molecular beam epitaxy (MBE). These measurements made possible both the evaluation of the films quality and the calibration of the dopants (Si and Be) effusion cells on the growing machine. Measurements on modulation doped single interface heterostructures also grown by MBE followed. The two dimensional electron gas in the heterostructures shows low temperature high mobility. The application of a strong magnetic field perpendicular to the plane of the gas eliminated its degrees of freedom completely and permitted the observation of Schubnikov-deHaas oscillations and integer quantum Hall effect. During the work we have deviced and developed apparatus in order to make ohmic contacts and perform litography to semiconductors. (author) [pt

  18. A review of nano-optics in metamaterial hybrid heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, Western University, London N6G 3K7 (Canada)

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  19. Long wave polar modes in semiconductor heterostructures

    CERN Document Server

    Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F

    1998-01-01

    Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...

  20. DFT study on the interfacial properties of vertical and in-plane BiOI/BiOIO3 hetero-structures.

    Science.gov (United States)

    Dai, Wen-Wu; Zhao, Zong-Yan

    2017-04-12

    Composite photocatalysts with hetero-structures usually favor the effective separation of photo-generated carriers. In this study, BiOIO 3 was chosen to form a hetero-structure with BiOI, due to its internal polar field and good lattice matching with BiOI. The interfacial properties and band offsets were focused on and analyzed in detail by DFT calculations. The results show that the charge depletion and accumulation mainly occur in the region near the interface. This effect leads to an interfacial electric field and thus, the photo-generated electron-hole pairs can be easily separated and transferred along opposite directions at the interface, which is significant for the enhancement of the photocatalytic activity. Moreover, according to the analysis of band offsets, the vertical BiOI/BiOIO 3 belongs to the type-II hetero-structure, while the in-plane BiOI/BiOIO 3 belongs to the type-I hetero-structure. The former type of hetero-structure has more favorable effects to enhance the photocatalytic activity of BiOI than that of the latter type of hetero-structure. In the case of the vertical BiOI/BiOIO 3 hetero-structure, photo-generated electrons can move from the conduction band of BiOI to that of BiOIO 3 , while holes can move from the valence band of BiOIO 3 to that of BiOI under solar radiation. In addition, the introduced internal electric field functions as a selector that can promote the separation of photo-generated carriers, resulting in the higher photocatalytic quantum efficiency. These findings illustrate the underlying mechanism for the reported experiments, and can be used as a basis for the design of novel highly efficient composite photocatalysts with hetero-structures.

  1. Effect of strain on voltage-controlled magnetism in BiFeO3-based heterostructures

    Science.gov (United States)

    Wang, J. J.; Hu, J. M.; Yang, T. N.; Feng, M.; Zhang, J. X.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures. PMID:24686503

  2. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Science.gov (United States)

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-05-09

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  3. Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

    International Nuclear Information System (INIS)

    Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

    2016-01-01

    We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov–de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov–de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of

  4. Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures.

    Science.gov (United States)

    Gopinadhan, Kalon; Shin, Young Jun; Jalil, Rashid; Venkatesan, Thirumalai; Geim, Andre K; Castro Neto, Antonio H; Yang, Hyunsoo

    2015-09-21

    Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of ∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

  5. Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

    Science.gov (United States)

    Singh, Kirandeep; Kaur, Davinder

    2017-02-01

    The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

  6. Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices.

    Science.gov (United States)

    Rathi, Servin; Lee, Inyeal; Lim, Dongsuk; Wang, Jianwei; Ochiai, Yuichi; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung; Yu, Young-Jun; Kim, Philip; Kim, Gil-Ho

    2015-08-12

    Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

  7. Pyroelectric effect and lattice thermal conductivity of InN/GaN heterostructures

    Science.gov (United States)

    Hansdah, Gopal; Sahoo, Bijay Kumar

    2018-06-01

    The built-in-polarization (BIP) of InN/GaN heterostructures enhances Debye temperature, phonon mean free path and thermal conductivity of the heterostructure at room temperature. The variation of thermal conductivities (kp: including polarization mechanism and k: without polarization mechanism) with temperature predicts the existence of a transition temperature (Tp) between primary and secondary pyroelectric effect. Below Tp, kp is lower than k; while above Tp, kp is significantly contributed from BIP mechanism due to thermal expansion. A thermodynamic theory has been proposed to explain the result. The room temperature thermal conductivity of InN/GaN heterostructure with and without polarization is respectively 32 and 48 W m-1 K-1. The temperature Tp and room temperature pyroelectric coefficient of InN has been predicted as 120 K and -8.425 μC m-2 K-1, respectively which are in line with prior literature studies. This study suggests that thermal conductivity measurement in InN/GaN heterostructures can help to understand the role of phonons in pyroelectricity.

  8. Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope.

    Science.gov (United States)

    Alexeev, Evgeny M; Catanzaro, Alessandro; Skrypka, Oleksandr V; Nayak, Pramoda K; Ahn, Seongjoon; Pak, Sangyeon; Lee, Juwon; Sohn, Jung Inn; Novoselov, Kostya S; Shin, Hyeon Suk; Tartakovskii, Alexander I

    2017-09-13

    Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent, and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridization of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The color and brightness in such images are used here to identify mono- and few-layer crystals and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in heterobilayers composed of mechanically exfoliated flakes and as a function of the twist angle in atomic layers grown by chemical vapor deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterization of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth.

  9. Ultrafast strain engineering in complex oxide heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Popovich, Paul; Caviglia, Andrea; Hu, Wanzheng; Bromberger, Hubertus; Singla, Rashmi; Mitrano, Matteo; Hoffmann, Matthias C.; Kaiser, Stefan; Foerst, Michael [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Scherwitzl, Raoul; Zubko, Pavlo; Gariglio, Sergio; Triscone, Jean-Marc [Departement de Physique de la Matiere Condensee, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneve 4, Geneva (Switzerland); Cavalleri, Andrea [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom)

    2012-07-01

    The mechanical coupling between the substrate and the thin film is expected to be effective on the ultrafast timescale, and could be exploited for the dynamic control of materials properties. Here, we demonstrate that a large-amplitude mid-infrared field, made resonant with a stretching mode of the substrate, can switch the electronic properties of a thin film across an interface. Exploiting dynamic strain propagation between different components of a heterostructure, insulating antiferromagnetic NdNiO{sub 3} is driven through a prompt, five-order-of-magnitude increase of the electrical conductivity, with resonant frequency and susceptibility that is controlled by choice of the substrate material. Vibrational phase control, extended here to a wide class of heterostructures and interfaces, may be conductive to new strategies for electronic phase control at THz repetition rates.

  10. Spin-dependent and photon-assisted transmission enhancement and suppression in a magnetic-field tunable ZnSe/Zn{sub 1–x}Mn{sub x}Se heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chun-Lei, E-mail: licl@cnu.edu.cn [Laboratory for Micro-sized Functional Materials, College of Elementary Education, Capital Normal University, Beijing 100048 (China); Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Yuan, Rui-Yang [Center for Theoretical Physics, Department of Physics, Capital Normal University, Beijing 100048 (China); Guo, Yong, E-mail: guoy66@tsinghua.edu.cn [Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2016-01-07

    Using the effective-mass approximation and Floquet theory, we theoretically investigate the terahertz photon-assisted transport through a ZnSe/Zn{sub 1−x}Mn{sub x}Se heterostructure under an external magnetic field, an electric field, and a spatially homogeneous oscillatory field. The results show that both amplitude and frequency of the oscillatory field can accurately manipulate the magnitude of the spin-dependent transmission probability and the positions of the Fano-type resonance due to photon absorption and emission processes. Transmission resonances can be enhanced to optimal resonances or drastically suppressed for spin-down electrons tunneling through the heterostructure and for spin-up ones tunneling through the same structure, resonances can also be enhanced or suppressed, but the intensity is less than the spin-down ones. Furthermore, it is important to note that transmission suppression can be clearly seen from both the spin-down component and the spin-up component of the current density at low magnetic field; at the larger magnetic field, however, the spin-down component is suppressed, and the spin-up component is enhanced. These interesting properties may provide an alternative method to develop multi-parameter modulation electron-polarized devices.

  11. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  12. Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS$_{2}$ Heterostructures

    OpenAIRE

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, Gukhyung

    2013-01-01

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermio...

  13. IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures : Proceedings of the IUTAM Symposium

    CERN Document Server

    Wang, Jianxiang

    2013-01-01

    This volume constitutes the proceedings of the IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures, held in Beijing, 8-12 August, 2010. The symposium brought together the most active scientists working in this area from the fields of solid mechanics, composites, physics, and materials science and summarized the state-of-the-art research results with a view to advancing the frontiers of mechanics and materials physics.         Nanomaterials and heterostructures have a large fraction of their atoms at surfaces and  interfaces. These atoms see a different environment to those in the interior and can have a substantial effect on the overall mechanical and physical behaviour of a material. The last decade has witnessed a growing interest in the study of surfaces and how the surface behaviour couples with that of the bulk to determine the overall system response. The papers in this proceedings cover: extension of continuum mechanics and thermodynamics to the nano-scale; ...

  14. Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

    Science.gov (United States)

    Völkl, Tobias; Rockinger, Tobias; Drienovsky, Martin; Watanabe, Kenji; Taniguchi, Takashi; Weiss, Dieter; Eroms, Jonathan

    2017-09-01

    We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene /WSe2/SiO2 samples we observe mobilities of ˜12 000 cm2V-1s-1 . Magnetic-field-dependent resistance measurements on these samples show a peak in the conductivity at low magnetic fields. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hexagonal boron nitride show a much higher mobility of up to ˜120 000 cm2V-1s-1 . However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic fields a resistance peak appears, which we ascribe to a size effect due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors due to complete lifting of the spin and valley degeneracies.

  15. van der Waals heterostructures of germanene, stanene, and silicene with hexagonal boron nitride and their topological domain walls

    Science.gov (United States)

    Wang, Maoyuan; Liu, Liping; Liu, Cheng-Cheng; Yao, Yugui

    2016-04-01

    We investigate van der Waals (vdW) heterostructures made of germanene, stanene, or silicene with hexagonal boron nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further engineered in the heterostructures, where the competition between the substrate effect and external electric fields can be used to control the tunable topological phase transitions. Using such heterostructures as building blocks, various vdW topological domain walls (DW) are designed, along which there exist valley polarized quantum spin Hall edge states or valley-contrasting edge states which are protected by valley(spin)- resolved topological charges and can be tailored by the patterning of the heterojunctions and by external fields.

  16. Electronic structure robustness and design rules for 2D colloidal heterostructures

    Science.gov (United States)

    Chu, Audrey; Livache, Clément; Ithurria, Sandrine; Lhuillier, Emmanuel

    2018-01-01

    Among the colloidal quantum dots, 2D nanoplatelets present exceptionally narrow optical features. Rationalizing the design of heterostructures of these objects is of utmost interest; however, very little work has been focused on the investigation of their electronic properties. This work is organized into two main parts. In the first part, we use 1D solving of the Schrödinger equation to extract the effective masses for nanoplatelets (NPLs) of CdSe, CdS, and CdTe and the valence band offset for NPL core/shell of CdSe/CdS. In the second part, using the determined parameters, we quantize how the spectra of the CdSe/CdS heterostructure get affected by (i) the application of an electric field and (ii) by the presence of a dull interface. We also propose design strategies to make the heterostructure even more robust.

  17. Vertical electron transport in van der Waals heterostructures with graphene layers

    International Nuclear Information System (INIS)

    Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Aleshkin, V. Ya.; Dubinov, A. A.; Mitin, V.; Shur, M. S.

    2015-01-01

    We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures

  18. Impurity-induced states in superconducting heterostructures

    Science.gov (United States)

    Liu, Dong E.; Rossi, Enrico; Lutchyn, Roman M.

    2018-04-01

    Heterostructures allow the realization of electronic states that are difficult to obtain in isolated uniform systems. Exemplary is the case of quasi-one-dimensional heterostructures formed by a superconductor and a semiconductor with spin-orbit coupling in which Majorana zero-energy modes can be realized. We study the effect of a single impurity on the energy spectrum of superconducting heterostructures. We find that the coupling between the superconductor and the semiconductor can strongly affect the impurity-induced states and may induce additional subgap bound states that are not present in isolated uniform superconductors. For the case of quasi-one-dimensional superconductor/semiconductor heterostructures we obtain the conditions for which the low-energy impurity-induced bound states appear.

  19. Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum

    DEFF Research Database (Denmark)

    Drachmann, A C C; Suominen, H J; Kjærgaard, Morten

    2017-01-01

    We demonstrate the transfer of the superconducting properties of NbTi, a large-gap high-critical-field superconductor, into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used...... to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multiple Andreev reflections reveal near-unity transparency with an induced gap Δ* = 0.50 meV and a critical temperature of 7.8 K. Tunneling spectroscopy yields a hard induced gap in the InAs adjacent...

  20. Bandgap engineering in van der Waals heterostructures of blue phosphorene and MoS{sub 2}: A first principles calculation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.Y. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Si, M.S., E-mail: sims@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Peng, S.L. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Zhang, F. [Key Lab of Photovoltaic Materials of Henan Province, Henan University, Kaifeng 475001 (China); Wang, Y.H.; Xue, D.S. [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2015-11-15

    Blue phosphorene (BP) was theoretically predicted to be thermally stable recently. Considering its similar in-layer hexagonal lattice to MoS{sub 2}, MoS{sub 2} could be an appropriate substrate to grow BP in experiments. In this work, the van der Waals (vdW) heterostructures are constructed by stacking BP on top of MoS{sub 2}. The thermal stability and electronic structures are evaluated based on first principles calculations with vdW-corrected exchange-correlation functional. The formation of the heterostructures is demonstrated to be exothermic and the most stable stacking configuration is confirmed. The heterostructures BP/MoS{sub 2} preserve both the properties of BP and MoS{sub 2} but exhibit relatively narrower bandgaps due to the interlayer coupling effect. The band structures can be further engineered by applying external electric fields. An indirect–direct bandgap transition in bilayer BP/MoS{sub 2} is demonstrated to be controlled by the symmetry property of the built-in electric dipole fields. - Graphical abstract: An indirect-direct band gap transition occurs in van der Waals heterostructure of MoS{sub 2}/BP under external electric fields which is demonstrated to be controlled by the symmetry of the built-in electric dipole fields. - Highlights: • The stacking of heterostructures of BP/MoS{sub 2} is demonstrated to be exothermic. • This suggests that it is possible to grow BP using MoS{sub 2} as the substrate. • The band structures of the heterostructures are exploited. • It realizes an indirect–direct gap transition under external electric fields. • The symmetry of the built-in electric dipole fields controls such gap transition.

  1. Manipulating the magnetism and resistance state of Mn:ZnO/Pb(Zr0.52Ti0.48)O3 heterostructured films through electric fields

    Science.gov (United States)

    Li, Yong-Chao; Wu, Jun; Pan, Hai-Yang; Wang, Jue; Wang, Guang-Hou; Liu, Jun-Ming; Wan, Jian-Guo

    2018-05-01

    Mn:ZnO/Pb(Zr0.52Ti0.48)O3 (PZT) heterostructured films have been prepared on Pt/Ti/SiO2/Si wafers by a sol-gel process. Nonvolatile and reversible manipulation of the magnetism and resistance by electric fields has been realized. Compared with the saturation magnetic moment (Ms) in the +3.0 V case, the modulation gain of Ms can reach 270% in the -3.0 V case at room temperature. The resistance change is attributed to the interfacial potential barrier height variation and the formation of an accumulation (or depletion) layer at the Mn:ZnO/PZT interface, which can be regulated by the ferroelectric polarization direction. The magnetism of Mn:ZnO originates from bound magnetic polarons. The mobile carrier variation in Mn:ZnO, owing to interfacial polarization coupling and the ferroelectric field effect, enables the electric manipulation of the magnetism in the Mn:ZnO/PZT heterostructured films. This work presents an effective method for modulating the magnetism of magnetic semiconductors and provides a promising avenue for multifunctional devices with both electric and magnetic functionalities.

  2. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    Science.gov (United States)

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

  3. Voltage control of magnetism in multiferroic heterostructures.

    Science.gov (United States)

    Liu, Ming; Sun, Nian X

    2014-02-28

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

  4. Ionic conductivity in oxide heterostructures: the role of interfaces

    Directory of Open Access Journals (Sweden)

    Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

    2010-01-01

    Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  5. Electric-Field Control of Magnetism in Co40Fe40B20/(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 Multiferroic Heterostructures with Different Ferroelectric Phases.

    Science.gov (United States)

    Liu, Yan; Zhao, Yonggang; Li, Peisen; Zhang, Sen; Li, Dalai; Wu, Hao; Chen, Aitian; Xu, Yang; Han, X F; Li, Shiyan; Lin, Di; Luo, Haosu

    2016-02-17

    Electric-field control of magnetism in multiferroic heterostructures composed of Co40Fe40B20 (CoFeB) and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) with different ferroelectric phases via changing composition and temperature is explored. It is demonstrated that the nonvolatile looplike bipolar-electric-field-controlled magnetization, previously found in the CoFeB/PMN-xPT heterostructures with PMN-xPT in the rhombohedral (R) phase around the morphotropic phase boundary (MPB), also occurs for PMN-xPTs with both R phase (far away from MPB) and monoclinic (M) phase, suggesting that the phenomenon is the common feature of CoFeB/PMN-xPT multiferroic heterostructures for PMN-xPT with different phases. The magnitude of the effect changes with increasing temperature and volatile bipolar-electric-field-controlled magnetization with a butterflylike behavior occurs when the ferroelectric phase changes to the tetragonal phase (T). Moreover, for the R-phase sample with x = 0.18, an abrupt and giant increase of magnetization is observed at a characteristic temperature in the temperature dependence of magnetization curve. These results are discussed in terms of coupling between magnetism and ferroelectric domains including macro- and microdomains for different ferroelectric phases. This work is helpful for understanding the phenomena of electric-field control of magnetism in FM/FE multiferroic heterostructures and is also important for applications.

  6. Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

    International Nuclear Information System (INIS)

    Sarua, A; Ji, Hangfeng; Pomeroy, J W; Kuball, M; Uren, M J; Martin, T

    2010-01-01

    Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors (HFETs), i.e. the strain induced by applying bias to a transistor, was studied using micro-Raman scattering spectroscopy as a function of applied source–drain voltage for different GaN buffer doping levels and substrate types. By monitoring the phonon frequency shifts and line width of the E 2 and A 1 (LO) phonon modes of GaN, a considerable piezoelectric strain/stress was found in undoped devices, which exhibited a saturation above 40 V bias. This saturation voltage was used to quantify the deep acceptor concentration in the GaN buffer layer. Using experimental Raman data and numerical modelling of the electric field distribution in the device, it was furthermore established that Fe doping causes confinement of the strain/stress to the vicinity of the AlGaN/GaN interface, i.e. near the electron channel, with potential implications for device reliability. It was concluded that varying the structure and doping in the buffer layer has the potential to modify the converse piezoelectric strain and hence affect reliability issues in AlGaN/GaN HFETs

  7. Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

    Science.gov (United States)

    Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

    2016-12-01

    Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

  8. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

    KAUST Repository

    Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xixiang; Sun, Ji-Rong; Shen, Bao-Gen

    2015-01-01

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric

  9. Electric field modulated conduction mechanism in Al/BaTiO3/La0.67Sr0.33MnO3 heterostructures

    KAUST Repository

    Zheng, Dongxing; Li, Dong; Gong, Junlu; Jin, Chao; Li, Peng; Zhang, Xixiang; Bai, Haili

    2017-01-01

    Mediating a metastable state is a promising way to achieve a giant modulation of physical properties in artificial heterostructures. A metastable state La0.67Sr0.33MnO3 (LSMO) layer suffering tensile strain was grown on MgO substrates. Incorporating with the ferroelectric BaTiO3 (BTO) layer, an accumulation or depletion state controlled by electric fields can be formed at the BTO/LSMO interface, which drives a switching of the conduction mechanism between space charge limited conduction and Poole-Frenkel emission, corresponding to the low and high resistance states. Our results lighten an effective way for electric-field modulated resistance states in multiferroic magnetoelectric devices.

  10. Electric field modulated conduction mechanism in Al/BaTiO3/La0.67Sr0.33MnO3 heterostructures

    KAUST Repository

    Zheng, Dongxing

    2017-08-08

    Mediating a metastable state is a promising way to achieve a giant modulation of physical properties in artificial heterostructures. A metastable state La0.67Sr0.33MnO3 (LSMO) layer suffering tensile strain was grown on MgO substrates. Incorporating with the ferroelectric BaTiO3 (BTO) layer, an accumulation or depletion state controlled by electric fields can be formed at the BTO/LSMO interface, which drives a switching of the conduction mechanism between space charge limited conduction and Poole-Frenkel emission, corresponding to the low and high resistance states. Our results lighten an effective way for electric-field modulated resistance states in multiferroic magnetoelectric devices.

  11. Crystal orientation effects on wurtzite quantum well electromechanical fields

    DEFF Research Database (Denmark)

    Duggen, Lars; Willatzen, Morten

    2010-01-01

    in the literature for semiconductors, is inaccurate for ZnO/MgZnO heterostructures where shear-strain components play an important role. An interesting observation is that a growth direction apart from [1̅ 21̅ 0] exists for which the electric field in the quantum well region becomes zero. This is important for, e......A one-dimensional continuum model for calculating strain and electric field in wurtzite semiconductor heterostructures with arbitrary crystal orientation is presented and applied to GaN/AlGaN and ZnO/MgZnO heterostructure combinations. The model is self-consistent involving feedback couplings...... of spontaneous polarization, strain, and electric field. Significant differences between fully coupled and semicoupled models are found for the longitudinal and shear-strain components as a function of the crystal-growth direction. In particular, we find that the semicoupled model, typically used...

  12. Future applications of heterostructures

    Science.gov (United States)

    König, Ulf

    1996-01-01

    In this review the status and future of heterostructure devices is discussed. The author concentrates on III/V and Si/SiGe. Performance and applications are folded to the data and expectations of the micro- and opto-electronic market and to the traditional Si-mainstream. New trends, i.e. the SIA-roadmap, are checked how heterodevices can fit in. Only the most attractive candidates for applications are considered, i.e. the heterobipolar-, the hetero field effect-transistors, the resonant tunnel diode and to a less extent, some optoelectronic devices. Considered figures of merit are frequencies, transconductance, noise at high and low frequencies, threshold voltage, power delay, threshold current and quantum efficiencies. It is pointed out how to optimize those by material and design. Extrapolations to the future potential of heterodevices are made, just taking the claimed scaling of lateral dimensions into consideration. Field of applications are presented, where heterodevices offer exclusive qualities, i.e. high frequency transmission and sensors, and new mixed systems. In the case of logic the trend goes to nanoscaled devices and ICs targeting nanoelectronics beyond traditional electronics. Heterostructure layers allow a vertical nanoscaling and thus give an additional degree of freedom for designing and optimation. It is an attractive challenge for scientists and engineers to solve the related technological problems like thin, low thermal budget oxides, like defect free buffer layers etc. Special attention is put on Si/SiGe, which is now on an upswing in electronics and photonics.

  13. Strain and electric field mediated manipulation of magnetism in La_(_1_-_x_)Sr_xMnO_3/BaTiO_3 heterostructures

    International Nuclear Information System (INIS)

    Schmitz, Markus

    2016-01-01

    electric field on the magnetization. The magnetic coercivity field shifts by the application of electric fields giving rise to a change of the magnetic anisotropy. Polarized neutron reflectivity measurements yield the magnetization profiles of the LSMO/BTO heterostructures to clarify a limitation of the effect to the interface. Samples grown by OMBE indicate a better epitaxial crystal structure due to a strain induced reduction in the magnetization at the interface. Samples produced by HOPSS show a reduced magnetization for higher layer thicknesses, which might be related to oxygen vacancies. Simulations of the polarized neutron reflectivity data for different electric field directions reveal that the observed differences in the reflectivity are mostly related to altered structural properties. Several mechanisms, which might be responsible for the observed effects in LSMO on BTO, are discussed. Strain effects via the elastic channel can lead to a rotation of the magnetic anisotropy, a change of the orbital ordering or the exchange interaction. Also carriermediated effects and oxygen diffusion under applied electric fields have to be considered. Furthermore, the ferroelectric properties of the BaTiO_3 substrates and their response to the electric field is of crucial importance to explain the observed effects.

  14. Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

    International Nuclear Information System (INIS)

    Jiang, Y; Wang, Q P; Wang, D J; Tamai, K; Li, L A; Ao, J-P; Ohno, Y; Shinkai, S; Miyashita, T; Motoyama, S-I

    2014-01-01

    We report the investigation of boron ion implantation as a device field isolation process for GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure. In the mesa isolation region of a bar-type MOSFET, a parasitic MOS-channel existed and widened the designed channel width, which would result in an overestimated mobility compared with a ring-type MOSFET. After boron ions implantation in the isolation region, the overestimation of field-effect mobility of bar-type MOSFETs was eliminated. The sub-threshold characteristics and on-state drain current of the bar-type MOSFETs coincide with the ring-type devices. Long-channel ring-type MOSFETs, with and without ion implantation, were fabricated on the recess region to evaluate the sub-threshold characteristics. The MOSFETs with boron ions implanted into the recess region showed a low drain current up to the gate bias of 10V. The result indicated that boron ion implantation prevented the formation of parasitic MOS-channel in the isolation region and achieved field isolation. The current–voltage characteristics of MOSFETs with the normal recess condition demonstrated no degradation of device performance after boron ions implanted into the isolation region. Boron ion implantation by further optimization can be a field isolation method for GaN MOSFETs. (paper)

  15. NiTiCu/AlN/NiTiCu shape memory thin film heterostructures for vibration damping in MEMS

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in

    2014-03-25

    Highlights: • Fabrication of NiTiCu/AlN/NiTiCu heterostructure using dc/rf magnetron sputtering. • Exhibits highest hardness (38 GPa) and elastic modulus (187 GPa). • Enhanced dissipation of mechanical energy (E{sub d} = 5.7 N J). • High damping capacity (0.052) and figure of merit (∼0.62). • Can be applied for vibration damping in MEMS. -- Abstract: Shape memory alloy (NiTiCu) thin films coupled with piezoelectric AlN layer produce an intelligent material for vibration damping. In the present study pure NiTiCu, NiTiCu/AlN and NiTiCu/AlN/NiTiCu heterostructures have been deposited on Si substrate using magnetron sputtering technique. By the use of the interfaces and shape memory effect provided by NiTiCu layers, the damping capacity can be increased along with increase in stiffness and mechanical hardness. The heterostructures were characterized in terms of structural, electrical, morphological and mechanical properties by X-ray diffraction (XRD), four probe resistivity method, atomic force microscopy, field emission scanning electron microscopy, and nanoindentation. The NiTiCu/AlN/NiTiCu heterostructure exhibit enhanced mechanical and damping properties as compared to NiTiCu/AlN and pure NiTiCu. This enhancement in hardness and damping of the heterostructure could be attributed to the shape memory effect of NiTiCu, intrinsic piezoelectricity of AlN and increased number of interfaces in heterostructure that help in dissipation of mechanical vibrations. The findings of this work provide additional impetus for the application of these heterostructures in emerging fields of nanotechnology and microelectro mechanical (MEMS) devices.

  16. NiTiCu/AlN/NiTiCu shape memory thin film heterostructures for vibration damping in MEMS

    International Nuclear Information System (INIS)

    Kaur, Navjot; Kaur, Davinder

    2014-01-01

    Highlights: • Fabrication of NiTiCu/AlN/NiTiCu heterostructure using dc/rf magnetron sputtering. • Exhibits highest hardness (38 GPa) and elastic modulus (187 GPa). • Enhanced dissipation of mechanical energy (E d = 5.7 N J). • High damping capacity (0.052) and figure of merit (∼0.62). • Can be applied for vibration damping in MEMS. -- Abstract: Shape memory alloy (NiTiCu) thin films coupled with piezoelectric AlN layer produce an intelligent material for vibration damping. In the present study pure NiTiCu, NiTiCu/AlN and NiTiCu/AlN/NiTiCu heterostructures have been deposited on Si substrate using magnetron sputtering technique. By the use of the interfaces and shape memory effect provided by NiTiCu layers, the damping capacity can be increased along with increase in stiffness and mechanical hardness. The heterostructures were characterized in terms of structural, electrical, morphological and mechanical properties by X-ray diffraction (XRD), four probe resistivity method, atomic force microscopy, field emission scanning electron microscopy, and nanoindentation. The NiTiCu/AlN/NiTiCu heterostructure exhibit enhanced mechanical and damping properties as compared to NiTiCu/AlN and pure NiTiCu. This enhancement in hardness and damping of the heterostructure could be attributed to the shape memory effect of NiTiCu, intrinsic piezoelectricity of AlN and increased number of interfaces in heterostructure that help in dissipation of mechanical vibrations. The findings of this work provide additional impetus for the application of these heterostructures in emerging fields of nanotechnology and microelectro mechanical (MEMS) devices

  17. Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

    International Nuclear Information System (INIS)

    Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

    2015-01-01

    We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

  18. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    Science.gov (United States)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-09

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  19. Axial Ge/Si nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  20. Engineering charge transport by heterostructuring solution-processed semiconductors

    Science.gov (United States)

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  1. Advanced Semiconductor Heterostructures Novel Devices, Potential Device Applications and Basic Properties

    CERN Document Server

    Stroscio, Michael A

    2003-01-01

    This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the pr

  2. Vertical-Cavity In-plane Heterostructures: Physics and Applications

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-01-01

    We show that the in-plane heterostructures realized in vertical cavities with high contrast grating(HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic well, the property of a confined mode is determined...... by the well width and barrier height. We show that in vertical-cavity in-plane heterostructures, anisotropic dispersion curvatures plays a key role as well, leading to exotic effects such as a photonic well with conduction band like well and a valence band like barrier. We investigate three examples...

  3. Favorable ultraviolet photoelectric effects in TbMnO3/Nb-SrTiO3 heterostructures

    KAUST Repository

    Jin, Kexin

    2014-12-01

    The rectifying properties and ultraviolet photoelectric effects in TbMnO3/Nb-doped SrTiO3 heterostructures have been investigated. The ideality factors and the diffusion voltages obtained from the current-voltage curves nonlinearly decrease with increasing the temperature. It is observed that the maximum photovoltaic values of the heterostructure irradiated by the 365 nm (2.6 mW/mm2) and 248 nm (0.71 mJ/mm2) lights are about 0.121 V and 0.119 V at T=300 K, respectively. The relations between the relaxation of photovoltages after the irradiation and the power intensity are revealed. These results suggest the potential applications in the development of ultraviolet detectors using oxides-based heterostructures.

  4. Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

    Directory of Open Access Journals (Sweden)

    Peter Kordos

    2005-01-01

    Full Text Available Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor HFETs is compared. It is found that MOSHFETs exhibit better DC and RF properties than simple HFET counterparts. Deposited SiO2 yielded an increase of the sheet carrier density from 7.6x10^12 cm^-2 to 9.2x10^12 cm^-2 and subsequent increase of the static drain saturation current from 0.75 A/mm to 1.09 A/mm. Small-signal RF characterisation of MOSHFETs showed an extrinsic current gain cut-off frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. These are fully comparable values with state-of-the-art AlGaN/GaN HFETs. Finnaůůy, microwave power measurements confirmed excellent performance of MOSHFETs:the output power measured at 7 GHz is about two-times larger than that of simple unpassived HFET. Thus, a great potential in application of GaN-based MOSHFETs is documented. 

  5. In-plane electric field controlled ferromagnetism and anisotropic magnetoresistance in an LSMO/PMN-PT heterostructure

    Science.gov (United States)

    Guo, Qi; Xu, Xiaoguang; Wang, Fang; Lu, Yunhao; Chen, Jikun; Wu, Yanjun; Meng, Kangkang; Wu, Yong; Miao, Jun; Jiang, Yong

    2018-06-01

    We report the in-plane electric field controlled ferromagnetism of La2/3Sr1/3MnO3 (LSMO) films epitaxially deposited on [Pb(Mg1/3Nb2/3)O3]0.7-(PbTiO3)0.3 (PMN-PT) (001), (011) and (111) single crystal substrates. The in-plane coercivities (H c∥) and remanences of the LSMO films greatly depend on the in-plane electric field applied on the PMN-PT (001) and (011) substrates. The experimental change of H c∥ is consistent with the Stoner–Wohlfarth model and first principle calculation with the electric field varying from ‑10 to 10 kV cm‑1. Moreover, the Curie temperature and anisotropic magnetoresistance of the LSMO films can also be manipulated by an in-plane electric field. Finally, the LSMO/PMN-PT (001) heterostructure is designed to be a new kind of magnetic signal generator with the source of electric field.

  6. Correlated electronic properties of different SrIrO{sub 3}/SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kraberger, Gernot J.; Aichhorn, Markus [Institute of Theoretical and Computational Physics, NAWI Graz, Graz University of Technology, Petersgasse 16, 8010 Graz (Austria)

    2016-07-01

    Strontium iridates are materials that combine strong electronic correlations with pronounced spin-orbit coupling, giving rise to fascinating physical properties. Strategies to purposefully influence and design these materials are a crucial step to further advance this field. A highly promising candidate for achieving this goal is the formation of heterostructures with other materials. Motivated by this quest, we perform calculations within the DFT+DMFT framework to investigate how the geometry of heterostructures of perovskite SrIrO{sub 3} with SrTiO{sub 3} influences their correlated electronic structure. We explore the differences between (001)- and (111)-stacked heterostructures, where the latter are particularly interesting because they form buckled honeycomb lattices that have non-trivial topological properties. For the (001)-heterostructures the effect of varying the thickness of the SrIrO{sub 3} layers, and thus their effective dimensionality, are studied. As an important ingredient we have to consider the effect of lattice distortions - in the form of a rotation of the oxygen cages - on the electronic correlations. We argue how the interplay of all these factors together allows a targeted modification of the electronic properties of the material.

  7. Plasmonics effect of Ag nanoislands covered n-Al:ZnO/p-Si heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Venugopal, N., E-mail: venu369@gmail.com; Kaur, Gurpreet, E-mail: gkaurdnt@iitr.ernet.in; Mitra, Anirban, E-mail: mitrafph@iitr.ernet.in

    2014-11-30

    Highlights: • Effect of Ag plasmonic nanoislands on n-aluminum doped zinc oxide (Al:ZnO)/p-silicon (p-Si) heterostructure device. • Morphology of Ag nanoisland in consequence with the optical (absorbance and photoluminescence) and electrical properties of the device. • Ag nanoisland/Al:ZnO heterostructure shows remarkable improvement of absorbance in both visible and UV region compare to the bare silicon. • Near band edge emission in photoluminescence has been enhanced with the deposition of Ag nanoisland. • Dark and illumination current density also increases with the deposition of Ag nanoisland. - Abstract: A plasmonic heterostructure of Ag (nanoisland)/n-Al:ZnO/p-Si is fabricated using pulsed laser deposition and thermal evaporation method. In this structure Al:ZnO plays an important role of transparent conductive oxide (spacer layer) as well as the rectifying junction with silicon. By introducing the silver nanoislands on Al:ZnO, light harvesting has been enhanced because of plasmonic and light scattering effect. Morphology of Ag nanoparticles in consequence with the optical and electrical properties of the device has been studied. Optical reflection measurement of the device with Ag nanoisland shows remarkable improvement in both visible and UV regions compared to the bare n-Al:ZnO/p-Si heterostructure. Near band edge emission in photoluminescence has been enhanced with the deposition of Ag nanoislands. Dark and illumination current density has also been increased with the deposition of Ag nanoisland. Our experimental results suggest that integration of Ag nanoislands may help to improve the efficiency of hybrid silicon based photonic devices.

  8. Spin-orbit controlled capacitance of a polar heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Steffen, Kevin; Kopp, Thilo [Center for Electronic Correlations and Magnetism, EP VI, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Loder, Florian [Center for Electronic Correlations and Magnetism, EP VI and TP III, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany)

    2015-07-01

    Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and may generate a strong Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the capacitance of a heterostructure in which a strong RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is for example given by a LaAlO{sub 3} film on a SrTiO{sub 3} substrate which is gated by a top electrode. We find that due to a strong RSOC the capacitance can be larger than the classical geometric value.

  9. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

    Science.gov (United States)

    Kistanov, Andrey A.; Cai, Yongqing; Zhang, Yong-Wei; Dmitriev, Sergey V.; Zhou, Kun

    2017-03-01

    By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from  -7% (compression) to  +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H2O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H2O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H2O molecule and may cause an increase/decrease of the charge transfer between the H2O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors.

  10. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure

    International Nuclear Information System (INIS)

    Kistanov, Andrey A; Zhou, Kun; Cai, Yongqing; Zhang, Yong-Wei; Dmitriev, Sergey V

    2017-01-01

    By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from  −7% (compression) to  +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H 2 O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H 2 O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H 2 O molecule and may cause an increase/decrease of the charge transfer between the H 2 O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors. (paper)

  11. Electric Field Tuning Non-volatile Magnetism in Half-Metallic Alloys Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 Heterostructure

    Science.gov (United States)

    Dunzhu, Gesang; Wang, Fenglong; Zhou, Cai; Jiang, Changjun

    2018-03-01

    We reported the non-volatile electric field-mediated magnetic properties in the half-metallic Heusler alloy Co2FeAl/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure at room temperature. The remanent magnetization with different applied electric field along [100] and [01-1] directions was achieved, which showed the non-volatile remanent magnetization driven by an electric field. The two giant reversible and stable remanent magnetization states were obtained by applying pulsed electric field. This can be attributed to the piezostrain effect originating from the piezoelectric substrate, which can be used for magnetoelectric-based memory devices.

  12. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    International Nuclear Information System (INIS)

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C.

    2014-01-01

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm 2 V −1 s −1 at low operating voltages ( 10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures

  13. Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

    Science.gov (United States)

    Yuan, Hao; Li, Zhenyu

    2018-06-01

    Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zr n+1C n T2, T = O, F, OH, n = 1, 2) van der Waals (vdW) heterostructures are designed via first-principles calculations. Zr n+1C n T2 compositions with appropriate work functions lead to the formation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C2O2 even exhibits Ohmic contact behavior. BP/Zr2CO2 is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band structure of BP/Zr2CO2 can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/Å electric field. The versatile electronic properties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.

  14. Fabrication and transport studies of graphene-superconductor heterostructures

    Science.gov (United States)

    Hu, Jiuning; Wu, Tailung; Tian, Jifa; Chen, Yong

    2014-03-01

    Recently, graphene based stacked heterostructures, e.g., graphene and boron nitride (BN) multi-layers, have attracted much attention as a system to study novel interaction-driven physics (e.g., excitonic condensation) and perform interesting measurements (eg. Coulomb drag and tunneling). The realm of graphene-superconductor heterostructures remains less unexplored, while such a system offers various interesting prospects (effects of superconductor vortices lattices on over-layering graphene and quantum Hall states, where novel phenomena such as anionic excitations have been predicted). We have used polyvinyl alcohol (PVA) based carrier films and a micro-manipulator to transfer mechanically exfoliated flakes and fabricated graphene/BN/NbSe2 structures to study the transport properties of graphene in close proximity to electrically isolated superconducting NbSe2 films. The NbSe2 film shows the superconducting transition temperature of ~7 K and upper critical field of ~3.5 T after device fabrication. We will present results from magneto-transport in graphene and graphene-NbSe2 Coulomb drag and tunneling measurements.

  15. Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating

    Science.gov (United States)

    Nguyen, Chuong V.

    2018-04-01

    In this paper, the electronic properties and Schottky contact in graphene/MoS2 (G/MoS2) heterostructure under an applied electric field are investigated by means of the density functional theory. It can be seen that the electronic properties of the G/MoS2 heterostructure are preserved upon contacting owing to the weak van der Waals interaction. We found that the n-type Schottky contact is formed in the G/MoS2 heterostructure with the Schottky barrier height of 0.49 eV. Furthermore, both Schottky contact and Schottky barrier height in the G/MoS2 heterostructure could be controlled by the applied electric field. If a positive electric field of 4 V/nm is applied to the system, a transformation from the n-type Schottky contact to the p-type one was observed, whereas the system keeps an n-type Schottky contact when a negative electric field is applied. Our results may provide helpful information to design, fabricate, and understand the physics mechanism in the graphene-based two-dimensional van der Waals heterostructures like as G/MoS2 heterostructure.

  16. Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

    Science.gov (United States)

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2017-11-30

    Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

  17. The effect of exchange interaction on quasiparticle Landau levels in narrow-gap quantum well heterostructures.

    Science.gov (United States)

    Krishtopenko, S S; Gavrilenko, V I; Goiran, M

    2012-04-04

    Using the 'screened' Hartree-Fock approximation based on the eight-band k·p Hamiltonian, we have extended our previous work (Krishtopenko et al 2011 J. Phys.: Condens. Matter 23 385601) on exchange enhancement of the g-factor in narrow-gap quantum well heterostructures by calculating the exchange renormalization of quasiparticle energies, the density of states at the Fermi level and the quasiparticle g-factor for different Landau levels overlapping. We demonstrate that exchange interaction yields more pronounced Zeeman splitting of the density of states at the Fermi level and leads to the appearance of peak-shaped features in the dependence of the Landau level energies on the magnetic field at integer filling factors. We also find that the quasiparticle g-factor does not reach the maximum value at odd filling factors in the presence of large overlapping of spin-split Landau levels. We advance an argument that the behavior of the quasiparticle g-factor in weak magnetic fields is defined by a random potential of impurities in narrow-gap heterostructures. © 2012 IOP Publishing Ltd

  18. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    International Nuclear Information System (INIS)

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-01-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  19. Physics and application of persistent spin helix state in semiconductor heterostructures

    Science.gov (United States)

    Kohda, Makoto; Salis, Gian

    2017-07-01

    In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

  20. Fabrication of p-n heterostructure ZnO/Si moth-eye structures: Antireflection, enhanced charge separation and photocatalytic properties

    Science.gov (United States)

    Zeng, Yu; Chen, XiFang; Yi, Zao; Yi, Yougen; Xu, Xibin

    2018-05-01

    The pyramidal silicon substrate is formed by wet etching, then ZnO nanorods are grown on the surface of the pyramidal microstructure by a hydrothermal method to form a moth-eye composite heterostructure. The composite heterostructure of this material determines its excellent anti-reflection properties and ability to absorb light from all angles. In addition, due to the effective heterojunction binding area, the composite micro/nano structure has excellent photoelectric conversion performance. Its surface structure and the large specific surface area gives the material super hydrophilicity, excellent gas sensing characteristic, and photocatalytic properties. Based on the above characteristics, the micro/nano heterostructure can be used in solar cells, sensors, light-emitting devices, and photocatalytic fields.

  1. Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

    KAUST Repository

    Zhao, Ying-Ying

    2015-04-24

    Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.

  2. Efficient band structure modulations in two-dimensional MnPSe3/CrSiTe3 van der Waals heterostructures

    Science.gov (United States)

    Pei, Qi; Wang, Xiaocha; Zou, Jijun; Mi, Wenbo

    2018-05-01

    As a research upsurge, van der Waals (vdW) heterostructures give rise to numerous combined merits and novel applications in nanoelectronics fields. Here, we systematically investigate the electronic structure of MnPSe3/CrSiTe3 vdW heterostructures with various stacking patterns. Then, particular attention of this work is paid on the band structure modulations in MnPSe3/CrSiTe3 vdW heterostructures via biaxial strain or electric field. Under a tensile strain, the relative band edge positions of heterostructures transform from type-I (nested) to type-II (staggered). The relocation of conduction band minimum also brings about a transition from indirect to direct band gap. Under a compressive strain, the electronic properties change from semiconducting to metallic. The physical mechanism of strain-dependent band structure may be ascribed to the shifts of the energy bands impelled by different superposition of atomic orbitals. Meanwhile, our calculations manifest that band gap values of MnPSe3/CrSiTe3 heterostructures are insensitive to the electric field. Even so, by applying a suitable intensity of negative electric field, the band alignment transition from type-I to type-II can also be realized. The efficient band structure modulations via external factors endow MnPSe3/CrSiTe3 heterostructures with great potential in novel applications, such as strain sensors, photocatalysis, spintronic and photoelectronic devices.

  3. Pulsed field studies of magnetotransport in semiconductor heterostructures

    International Nuclear Information System (INIS)

    Dalton, K.S.H.

    1999-01-01

    High field magnetotransport in two classes of semiconductor heterostructures has been studied: parallel transport in InAs/(Ga,In)Sb double heterojunctions and superlattices at low temperatures (300 mK-4.2 K), and vertical transport in GaAs/AlAs short-period superlattices at 150-300 K. The experiments mainly used the Oxford pulsed magnet (∼45 T, ∼15 ms pulses). The development of the data acquisition system and experimental techniques for magnetotransport are described, including corrections to the data, required because of the rapidly changing magnetic field. Previous studies of magnetotransport in InAs/GaSb double heterojunctions are reviewed: this electron-hole system shows compensated quantum Hall plateaux, with ρ xy dips accompanied by 'anomalous' peaks in σ xx . New data show a peak between ν=1 plateaux; this behaviour and the temperature dependence of the 'anomalous' σ xx peaks are explained by considering the movement of the Fermi level amongst anticrossing electron- and hole-like levels. InAs/(Ga,In)Sb superlattices with electron:hole density ratios close to 1 exhibit large oscillations in the resistivity (maxima typically ∼20-30 x higher than minima) and conductivity components. Deep minima in ρ xy alternate with low-integer plateaux. The magnetotransport in various ideal structures is considered, to explain the experimental results. The growth of a novel structure has allowed clearer observation of the behaviour of ρ xx (giant maxima) and ρ xy (zeroes or maxima) when the contributions from each well to σ xx and σ xy approach zero. Measurements of the high field magnetotransport peak positions show that the band overlap is increased by growing 'InSb' rather than 'GaAs' interfaces (∼20% increase), increasing the indium in the (Ga,In)Sb (∼30% increase per 10% In), or growing along [111] instead of [001] (∼30% increase). Magnetophonon resonance in short-period GaAs/AlAs superlattices causes strong, electric field-dependent vertical

  4. Field emission current from a junction field-effect transistor

    International Nuclear Information System (INIS)

    Monshipouri, Mahta; Abdi, Yaser

    2015-01-01

    Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

  5. Polarized neutron reflectivity and scattering studies of magnetic heterostructures

    International Nuclear Information System (INIS)

    Zabel, H; Theis-Broehl, K

    2003-01-01

    The current interest in the magnetism of ultrathin films and multilayers is driven by their manifold applications in the magneto-and spin-electronic areas, for instance as magnetic field sensors or as information storage devices. In this regard, there is a large interest in exploring spin structures and spin disorder at the interface of magnetic heterostructures, to investigate magnetic domains in thin films and superlattices, and to understand remagnetization processes of various laterally shaped magnetic nanostructures. Traditionally neutron scattering has played a dominant role in the determination of spin structures, phase transitions and magnetic excitations in bulk materials. Today, its potential for the investigation of thin magnetic films has to be redefined. Polarized neutron reflectivity (PNR) at small wavevectors can provide precise information on the magnetic field distribution parallel to the film plane and on layer resolved magnetization vectors. In addition, PNR is not only sensitive to structural interface roughness but also to the magnetic roughness. Furthermore, magnetic hysteresis measurements from polarized small angle Bragg reflections allows us to filter out correlation effects during magnetization reversals of magnetic stripes and islands. An overview is provided on most recent PNR investigations of magnetic heterostructures

  6. Transfer matrix approach to electron transport in monolayer MoS2/MoO x heterostructures

    Science.gov (United States)

    Li, Gen

    2018-05-01

    Oxygen plasma treatment can introduce oxidation into monolayer MoS2 to transfer MoS2 into MoO x , causing the formation of MoS2/MoO x heterostructures. We find the MoS2/MoO x heterostructures have the similar geometry compared with GaAs/Ga1‑x Al x As semiconductor superlattice. Thus, We employ the established transfer matrix method to analyse the electron transport in the MoS2/MoO x heterostructures with double-well and step-well geometries. We also considere the coupling between transverse and longitudinal kinetic energy because the electron effective mass changes spatially in the MoS2/MoO x heterostructures. We find the resonant peaks show red shift with the increasing of transverse momentum, which is similar to the previous work studying the transverse-momentum-dependent transmission in GaAs/Ga1‑x Al x As double-barrier structure. We find electric field can enhance the magnitude of peaks and intensify the coupling between longitudinal and transverse momentums. Moreover, higher bias is applied to optimize resonant tunnelling condition to show negative differential effect can be observed in the MoS2/MoO x system.

  7. In-plane heterostructures of Sb/Bi with high carrier mobility

    Science.gov (United States)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  8. Proximity effect in superconductor/ferromagnet hetero-structures as a function of interface properties

    Science.gov (United States)

    Sarmiento, Julio; Patino, Edgar J.

    2014-03-01

    Superconductor/ferromagnet heterostructures are currently a subject of strong research due to novel phenomena resulting from the proximity effect. Among the most investigated ones are the oscillations of the critical temperature as function of the ferromagnet thickness. The oscillatory behavior of Tc is theoretically explained as to be result of the generation of the FFLO (Fulde-Ferrel-Larkin-Ovchinnikov) state of Cooper pairs under the presence of the exchange field of the ferromagnet. With the advancement of experimental techniques for S/F bilayers growth new questions regarding the effect of the interface transparency can to be addressed. For instance the influence of the interface roughness on the proximity effect. For studying this phenomenon Nb/Co and Nb/Cu/Co samples were sputtered on SiO2 substrates with different roughness. Characterization of these samples show a significant variation of Tc with the interface roughness. This results point towards a possible relationship between transparency and roughness of the interface. Proyecto Semilla Facultad de Ciencias Universidad de los Andes.

  9. Hydrogen Surfactant Effect on ZnO/GaN Heterostructures Growth

    Science.gov (United States)

    Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

    To grow high quality heterostructures based on ZnO and GaN, growth conditions that favor the layer by layer (Frank-Van der Merwe) growth mode have to be applied. However, if A wets B, B would not wet A without special treatments. A famous example is the epitaxial growth of Si/Ge/Si heterostructure with the help of arsenic surfactant in the late 1980s. It has been confirmed by the previous experiments and our calculations that poor crystal quality and 3D growth mode were obtained when GaN grown on ZnO polar surfaces while high quality ZnO was achieved on (0001) and (000-1)-oriented GaN. During the standard OMVPE growth processes, hydrogen is a common impurity and hydrogen-involved surface reconstructions have been well investigated experimentally and theoretically elsewhere. Due to the above facts, we proposed key growth strategies by using hydrogen as a surfactant to achieve ideal growth mode for GaN on ZnO (000-1) surface. This novel strategy may for the first time make the growth of high quality GaN single crystal on ZnO substrate possible. This surfactant effect is expected to largely improve the crystal quality and the efficiency of ZnO/GaN super lattices or other heterostructure devices. Part of the computing resources was provided by the High Performance Cluster Computing Centre, Hong Kong Baptist University. This work was supported by the start-up funding and direct Grant with the Project code of 4053134 and 3132748 at CUHK.

  10. Interface-engineered oxygen octahedral coupling in manganite heterostructures

    Science.gov (United States)

    Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

    2017-12-01

    Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low

  11. Tuning the Schottky contacts in the phosphorene and graphene heterostructure by applying strain.

    Science.gov (United States)

    Liu, Biao; Wu, Li-Juan; Zhao, Yu-Qing; Wang, Lin-Zhi; Caii, Meng-Qiu

    2016-07-20

    The structures and electronic properties of the phosphorene and graphene heterostructure are investigated by density functional calculations using the hybrid Heyd-Scuseria-Ernzerhof (HSE) functional. The results show that the intrinsic properties of phosphorene and graphene are preserved due to the weak van der Waals contact. But the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure can be tuned from p-type to n-type by the in-plane compressive strains from -2% to -4%. After analyzing the total band structure and density of states of P atom orbitals, we find that the Schottky barrier height (SBH) is determined by the P-pz orbitals. What is more, the variation of the work function of the phosphorene monolayer and the graphene electrode and the Fermi level shift are the nature of the transition of Schottky barrier from n-type Schottky contact to p-type Schottky contact in the phosphorene and graphene heterostructure under different in-plane strains. We speculate that these are general results of tuning of the electronic properties of the Schottky contacts in the phosphorene and graphene heterostructure by controlling the in-plane compressive strains to obtain a promising method to design and fabricate a phosphorene-graphene based field effect transistor.

  12. Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

    Science.gov (United States)

    Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

    2017-11-01

    A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

  13. Voltage manipulation of the magnetization reversal in Fe/n-GaAs/piezoelectric heterostructure

    International Nuclear Information System (INIS)

    Li, Yuanyuan; Luo, Wengang; Zhu, Lijun; Zhao, Jianhua; Wang, Kaiyou

    2015-01-01

    We carefully investigated the in-plane magnetization reversal and corresponding magnetic domain structures in Fe/n-GaAs/piezoelectric heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the in-plane <100> cubic and [11 ¯ 0] uniaxial magnetic anisotropy was observed in this system at virgin state. The piezo voltages can effectively manipulate the magnetic properties of the Fe/n-GaAs/piezoelectric heterostructure, where the manipulation of two-jump to one-jump magnetization switching during the magnetic reversal was achieved with magnetic field applied in [100] direction. Our findings on manipulation of ferromagnetization in this heterostructure could be important for future metal-semiconductor spintronic applications. The additional uniaxial anisotropy induced by piezo voltages obtained at ±75 V is ±1.4×10 3 J/m 3 . - Highlights: • In this work, we use piezo voltages not only realize the significant change of coercivity but also effectively manipulate the magnetization transition from one step to two steps during magnetic reversal, indicating that the piezo-voltages can be used to effectively control the magnetization reversal. • The additional uniaxial anisotropy induced by piezo voltages at +/−75 V are +/−1.4×10 3 J/m 3 . This work could be very used for future metal-semiconductor spintronic devices

  14. Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

    International Nuclear Information System (INIS)

    Spencer, B. F.; Smith, W. F.; Hibberd, M. T.; Dawson, P.; Graham, D. M.; Beck, M.; Bartels, A.; Guiney, I.; Humphreys, C. J.

    2016-01-01

    The effective mass, sheet carrier concentration, and mobility of electrons within a two-dimensional electron gas in an AlGaN/GaN heterostructure were determined using a laboratory-based terahertz cyclotron resonance spectrometer. The ability to perform terahertz cyclotron resonance spectroscopy with magnetic fields of up to 31 T was enabled by combining a high-field pulsed magnet with a modified asynchronous optical sampling terahertz detection scheme. This scheme allowed around 100 transmitted terahertz waveforms to be recorded over the 14 ms magnetic field pulse duration. The sheet density and mobility were measured to be 8.0 × 10 12  cm −2 and 9000 cm 2 V −1  s −1 at 77 K. The in-plane electron effective mass at the band edge was determined to be 0.228 ± 0.002m 0 .

  15. Photoinduced effect on carrier transport properties in La0.7Sr0.3MnO3/Si heterostructure

    International Nuclear Information System (INIS)

    Jin, K X; Tan, X Y; Chen, C L; Zhao, S G

    2008-01-01

    The photoinduced effect on carrier transport properties has been investigated in the La 0.7 Sr 0.3 MnO 3 /Si heterostructure prepared by the pulsed laser deposition method. A giant photoinduced relative change in the resistance of about 6783% in the current-perpendicular-to-plane (CPP) geometry of the heterostructure has been observed when it is irradiated by a 532 nm laser at T = 270 K. The rising time of about 100 μs in the CPP geometry of the heterostructure under modulated laser irradiation of 200 μs duration seems to be independent of temperature. This provides an innovation for potential application in functional optical and electrical devices

  16. Magnetic leverage effects in amorphous SmCo/CoAlZr heterostructures

    International Nuclear Information System (INIS)

    Procter, R. A.; Hase, T. P. A.; Magnus, F.; Andersson, G.; Hjörvarsson, B.; Sánchez-Hanke, C.

    2015-01-01

    Although magnetic heterostructures are the basis of many magnetic technologies, the mechanisms involved in magnetization reversals in such structures are not fully understood, especially in amorphous multilayers. Here, we report on the SmCo/CoAlZr system and exploit resonant magnetic x-ray scattering to probe the element specific magnetization reversals. When combined into a tri-layer structure, two different switching fields and reversal mechanisms are observed for the Sm and Co sub-lattices. We argue that the decoupling of the sub-lattices arises from the local distribution of atomic species within the amorphous matrix leading to a strong magnetic leverage effect and exchange pinning. The decoupling arises due to strong interactions between regions of high Co density which span the interface. The relatively sparse interactions between Sm and Co induce a localized pinning of the Co-rich areas, resulting in an exchange bias in minor loops and an enhanced coercivity

  17. Magnetic leverage effects in amorphous SmCo/CoAlZr heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Procter, R. A., E-mail: r.a.procter@warwick.ac.uk; Hase, T. P. A. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Magnus, F.; Andersson, G.; Hjörvarsson, B. [Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala (Sweden); Sánchez-Hanke, C. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)

    2015-08-10

    Although magnetic heterostructures are the basis of many magnetic technologies, the mechanisms involved in magnetization reversals in such structures are not fully understood, especially in amorphous multilayers. Here, we report on the SmCo/CoAlZr system and exploit resonant magnetic x-ray scattering to probe the element specific magnetization reversals. When combined into a tri-layer structure, two different switching fields and reversal mechanisms are observed for the Sm and Co sub-lattices. We argue that the decoupling of the sub-lattices arises from the local distribution of atomic species within the amorphous matrix leading to a strong magnetic leverage effect and exchange pinning. The decoupling arises due to strong interactions between regions of high Co density which span the interface. The relatively sparse interactions between Sm and Co induce a localized pinning of the Co-rich areas, resulting in an exchange bias in minor loops and an enhanced coercivity.

  18. Field emission current from a junction field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

    2015-04-15

    Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

  19. Photoluminescence energy transitions in GaAs-Ga1-xAlxAs double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

    International Nuclear Information System (INIS)

    Lopez, S.Y.; Mora-Ramos, M.E.; Duque, C.A.

    2009-01-01

    The photoluminescence energy transitions in GaAs-Ga 1-x Al x As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

  20. Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Y. C.; Gao, J., E-mail: jugao@hku.hk [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu (China)

    2016-08-22

    Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

  1. 1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures

    Science.gov (United States)

    Karpiak, Bogdan; Dankert, André; Cummings, Aron W.; Power, Stephen R.; Roche, Stephan; Dash, Saroj P.

    2018-03-01

    We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a change in sign of the signal for the electron- and hole-doped regimes, which is in contrast to the expected behavior of the spin signal. Calculations show that the contact-induced fringe fields are typically on the order of hundreds of mT, but can be reduced below 100 mT with careful optimization of the contact geometry. There may be an additional contribution from magnetoresistance effects due to tunneling anisotropy in the contacts, which needs further investigation. These studies are useful for optimization of spin injection and detection in 2D material heterostructures through 1D edge contacts.

  2. Localization and interaction effects in GaAs/AlGaAs heterostructures modified by 4He-ion implantation

    International Nuclear Information System (INIS)

    Taboryski, R.; Veje, E.; Lindelof, P.E.

    1990-01-01

    Magnetoresistance is used to study localization and interaction in the 2-dimensional electron layer of 4 He-ion implanted GaAs/AlGaAs modulation doped heterostructures. At very low magnetic fields weak localization magnetoresistance can be fitted to theory, thereby determining the diffusion constant and the phase relaxation rate. An unexpected saturation of the phase relaxation rate at low temperature was found to have an interesting relation to mobility and sample size. In the magnetic field range, where the cyclotron radius becomes of the order of the mean free path, the magnetoresistance was related to the effect of electron-electron interaction. By comparison of the magnetoresistance at different implantation doses, we extracted a remnant quantum correction to the conductivity, which has no earlier been noticed. In samples with two subbands populated interband scattering is observed to cause spin-orbit effects in the weak localization magnetoresistance. (orig.)

  3. Physics of SrTiO3-based heterostructures and nanostructures: a review.

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-02-09

    This review provides a summary of the rich physics expressed within SrTiO 3 -based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO 3 itself, we will then discuss the basics of SrTiO 3 -based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  4. Physics of SrTiO3-based heterostructures and nanostructures: a review

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-03-01

    This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  5. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Tikhomirov, V. G., E-mail: VV11111@yandex.ru [Saint Petersburg Electrotechnical University “LETI” (Russian Federation); Zemlyakov, V. E.; Volkov, V. V.; Parnes, Ya. M.; Vyuginov, V. N. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Cherkashin, N. A. [CEMES-CNRS-Université de Toulouse (France); Mizerov, M. N. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-02-15

    The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.

  6. Study of the effect of passivation layers on capacitance of AlGaN/GaN heterostructures

    Directory of Open Access Journals (Sweden)

    Kira L. Enisherlova

    2016-12-01

    Full Text Available MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the specimen surface. The shape of the typical C–V curves for the heterostructures with upper undoped i-AlGaN and i-GaN layers 1,5–2,5 nm in thickness have been analyzed. The appearance of a typical peak on the C–V curves upon a change from the depletion region to the accumulation region has been registered in some structures with an i-GaN layer thickness of 5 nm and more at low frequencies (f<50–200 kHz. The height of this peak increased with a reduction of frequency. It has been found experimentally that the frequency at which the peak is registered can depend on the dislocation density in heterostructures. Possible explanation of the peak formation and band diagram transformation in these structures under an applied electric field have been presented. We show that the application of a Si3N4 passivation layer results in the formation of additional positive charge.

  7. Strain and electric field mediated manipulation of magnetism in La{sub (1-x)}Sr{sub x}MnO{sub 3}/BaTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Schmitz, Markus

    2016-07-01

    hysteresis loops give a detailed view on the influence of the electric field on the magnetization. The magnetic coercivity field shifts by the application of electric fields giving rise to a change of the magnetic anisotropy. Polarized neutron reflectivity measurements yield the magnetization profiles of the LSMO/BTO heterostructures to clarify a limitation of the effect to the interface. Samples grown by OMBE indicate a better epitaxial crystal structure due to a strain induced reduction in the magnetization at the interface. Samples produced by HOPSS show a reduced magnetization for higher layer thicknesses, which might be related to oxygen vacancies. Simulations of the polarized neutron reflectivity data for different electric field directions reveal that the observed differences in the reflectivity are mostly related to altered structural properties. Several mechanisms, which might be responsible for the observed effects in LSMO on BTO, are discussed. Strain effects via the elastic channel can lead to a rotation of the magnetic anisotropy, a change of the orbital ordering or the exchange interaction. Also carriermediated effects and oxygen diffusion under applied electric fields have to be considered. Furthermore, the ferroelectric properties of the BaTiO{sub 3} substrates and their response to the electric field is of crucial importance to explain the observed effects.

  8. Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, B. F., E-mail: Ben.Spencer@manchester.ac.uk; Smith, W. F.; Hibberd, M. T.; Dawson, P.; Graham, D. M. [School of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL (United Kingdom); Beck, M.; Bartels, A. [Laser Quantum GmbH, Max-Stromeyer-Str. 116, 78467 Konstanz (Germany); Guiney, I.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2016-05-23

    The effective mass, sheet carrier concentration, and mobility of electrons within a two-dimensional electron gas in an AlGaN/GaN heterostructure were determined using a laboratory-based terahertz cyclotron resonance spectrometer. The ability to perform terahertz cyclotron resonance spectroscopy with magnetic fields of up to 31 T was enabled by combining a high-field pulsed magnet with a modified asynchronous optical sampling terahertz detection scheme. This scheme allowed around 100 transmitted terahertz waveforms to be recorded over the 14 ms magnetic field pulse duration. The sheet density and mobility were measured to be 8.0 × 10{sup 12 }cm{sup −2} and 9000 cm{sup 2} V{sup −1} s{sup −1} at 77 K. The in-plane electron effective mass at the band edge was determined to be 0.228 ± 0.002m{sub 0}.

  9. Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wallbank, John R.; Chen, Xi; Fal' ko, Vladimir I. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Mucha-Kruczynski, Marcin [Department of Physics, University of Bath (United Kingdom)

    2015-06-15

    Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Magnetoelectric coupling in multiferroic heterostructure of rf-sputtered Ni–Mn–Ga thin film on PMN–PT

    International Nuclear Information System (INIS)

    Teferi, M.Y.; Amaral, V.S.; Lounrenco, A.C.; Das, S.; Amaral, J.S.; Karpinsky, D.V.; Soares, N.; Sobolev, N.A.; Kholkin, A.L.; Tavares, P.B.

    2012-01-01

    In this paper, we report a preparation of multiferroic heterostructure from thin film of Ni–Mn–Ga (NMG) alloy and lead magnesium niobate–lead titanate (PMN–PT) with effective magnetoelectric (ME) coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. The heterostructure was prepared by relatively low temperature (400 °C) deposition of the film on single crystal of piezoelectric PMN–PT substrate using rf magnetron co-sputtering of Ni 50 Mn 50 and Ni 50 Ga 50 targets. Magnetic measurements by Superconducting Quantum Interference Design (SQIUD) Magnetometer and Vibrating Sample Magnetometer (VSM) on the film revealed that the film is in ferromagnetically ordered martensitic state at room temperature with saturation magnetization of ∼240 emu/cm 3 and Curie temperature of ∼337 K. Piezoresponse force microscopy (PFM) measurement done at room temperature on the substrate showed the presence of expected hysteresis loop confirming the stability of the piezoelectric state of the substrate after deposition. Room temperature ME voltage coefficient (α ME ) of the heterostructure was measured as a function of applied bias dc magnetic field in Longitudinal–Transverse (L–T) ME coupling mode by lock-in technique. A maximum ME coefficient α ME of 3.02 mV/cm Oe was measured for multiferroic NMG/PMN–PT heterostructure which demonstrates that there is ME coupling between the film as ferromagnetic material and PMN–PT as piezoelectric material. - Highlights: ► Multiferroic NMG/PMN–PT heterostructure prepared by depositing NMG alloy thin film on PMN–PT substrate. ► The film is in ferromagnetically ordered martensite state at room temperature. ► The substrate maintains its piezoelectric state after deposition. ► The heterostructure exhibits ME effect with maximum of α ME of 3.02 mV/cm Oe.

  11. First-principles approach for superconducting slabs and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Csire, Gabor [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We present a fully ab-initio method to calculate the transition temperature for superconducting slabs and heterostructures. In the case of thin superconductor layers the electron-phonon interaction may change significantly. Therefore we calculate the layer dependent phonon spectrum to determine the layer dependence of the electron-phonon coupling for such systems. The phonon spectrum is than coupled to the Kohn-Sham-Bogoliubov-de Gennes equation via the McMillan-Hopfield parameter, and it is solved self-consistently. The theory is applied to niobium slabs and niobium-gold heterostructures. Based on these calculations we investigate both the dependence of the superconducting transition temperature on the thickness of superconducting slabs and the inverse proximity effect observed in thin superconducting heterostructures.

  12. Scatterings and Quantum Effects in (Al ,In )N /GaN Heterostructures for High-Power and High-Frequency Electronics

    Science.gov (United States)

    Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

    2018-02-01

    Charge transport in the wide-band-gap (Al ,In )N /GaN heterostructures with high carrier density approximately 2 ×1013 cm-2 is investigated over a large range of temperature (270 mK ≤T ≤280 K ) and magnetic field (0 ≤B ≤18 T ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of 0.23 me is determined. Furthermore, the linear dependence with temperature (T power and high-frequency electronics.

  13. Voltage manipulation of the magnetization reversal in Fe/n-GaAs/piezoelectric heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yuanyuan; Luo, Wengang; Zhu, Lijun; Zhao, Jianhua; Wang, Kaiyou, E-mail: kywang@semi.ac.cn

    2015-02-01

    We carefully investigated the in-plane magnetization reversal and corresponding magnetic domain structures in Fe/n-GaAs/piezoelectric heterostructure using longitudinal magneto-optical Kerr microscopy. The coexistence of the in-plane <100> cubic and [11{sup ¯}0] uniaxial magnetic anisotropy was observed in this system at virgin state. The piezo voltages can effectively manipulate the magnetic properties of the Fe/n-GaAs/piezoelectric heterostructure, where the manipulation of two-jump to one-jump magnetization switching during the magnetic reversal was achieved with magnetic field applied in [100] direction. Our findings on manipulation of ferromagnetization in this heterostructure could be important for future metal-semiconductor spintronic applications. The additional uniaxial anisotropy induced by piezo voltages obtained at ±75 V is ±1.4×10{sup 3} J/m{sup 3}. - Highlights: • In this work, we use piezo voltages not only realize the significant change of coercivity but also effectively manipulate the magnetization transition from one step to two steps during magnetic reversal, indicating that the piezo-voltages can be used to effectively control the magnetization reversal. • The additional uniaxial anisotropy induced by piezo voltages at +/−75 V are +/−1.4×10{sup 3} J/m{sup 3}. This work could be very used for future metal-semiconductor spintronic devices.

  14. Resonant Photonic States in Coupled Heterostructure Photonic Crystal Waveguides

    Directory of Open Access Journals (Sweden)

    Sabarinathan J

    2010-01-01

    Full Text Available Abstract In this paper, we study the photonic resonance states and transmission spectra of coupled waveguides made from heterostructure photonic crystals. We consider photonic crystal waveguides made from three photonic crystals A, B and C, where the waveguide heterostructure is denoted as B/A/C/A/B. Due to the band structure engineering, light is confined within crystal A, which thus act as waveguides. Here, photonic crystal C is taken as a nonlinear photonic crystal, which has a band gap that may be modified by applying a pump laser. We have found that the number of bound states within the waveguides depends on the width and well depth of photonic crystal A. It has also been found that when both waveguides are far away from each other, the energies of bound photons in each of the waveguides are degenerate. However, when they are brought close to each other, the degeneracy of the bound states is removed due to the coupling between them, which causes these states to split into pairs. We have also investigated the effect of the pump field on photonic crystal C. We have shown that by applying a pump field, the system may be switched between a double waveguide to a single waveguide, which effectively turns on or off the coupling between degenerate states. This reveals interesting results that can be applied to develop new types of nanophotonic devices such as nano-switches and nano-transistors.

  15. Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

    Science.gov (United States)

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2014-01-21

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

  16. Lateral topological crystalline insulator heterostructure

    Science.gov (United States)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  17. Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors.

    Science.gov (United States)

    Song, Li; Hu, Yongsheng; Liu, Zheqin; Lv, Ying; Guo, Xiaoyang; Liu, Xingyuan

    2017-01-25

    The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

  18. Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

    Science.gov (United States)

    Maji, Nilay; Nath, T. K.

    2018-04-01

    The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

  19. Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

    International Nuclear Information System (INIS)

    Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

    2011-01-01

    (Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

  20. A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

    Science.gov (United States)

    Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

    1984-01-01

    Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

  1. Photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

    Energy Technology Data Exchange (ETDEWEB)

    Lopez, S.Y. [Grupo de Educacion en Ciencias Experimentales y Matematicas-GECEM, Facultad de Educacion, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.c [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)

    2009-12-15

    The photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

  2. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    Science.gov (United States)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  3. Electronic properties of blue phosphorene/graphene and blue phosphorene/graphene-like gallium nitride heterostructures.

    Science.gov (United States)

    Sun, Minglei; Chou, Jyh-Pin; Yu, Jin; Tang, Wencheng

    2017-07-05

    Blue phosphorene (BlueP) is a graphene-like phosphorus nanosheet which was synthesized very recently for the first time [Nano Lett., 2016, 16, 4903-4908]. The combination of electronic properties of two different two-dimensional materials in an ultrathin van der Waals (vdW) vertical heterostructure has been proved to be an effective approach to the design of novel electronic and optoelectronic devices. Therefore, we used density functional theory to investigate the structural and electronic properties of two BlueP-based heterostructures - BlueP/graphene (BlueP/G) and BlueP/graphene-like gallium nitride (BlueP/g-GaN). Our results showed that the semiconducting nature of BlueP and the Dirac cone of G are well preserved in the BlueP/G vdW heterostructure. Moreover, by applying a perpendicular electric field, it is possible to tune the position of the Dirac cone of G with respect to the band edge of BlueP, resulting in the ability to control the Schottky barrier height. For the BlueP/g-GaN vdW heterostructure, BlueP forms an interface with g-GaN with a type-II band alignment, which is a promising feature for unipolar electronic device applications. Furthermore, we discovered that both G and g-GaN can be used as an active layer for BlueP to facilitate charge injection and enhance the device performance.

  4. Favorable ultraviolet photoelectric effects in TbMnO3/Nb-SrTiO3 heterostructures

    KAUST Repository

    Jin, Kexin; Zhai, Y. X.; Li, Hui; Tian, Y. F.; Luo, B. C.; Wu, Tao

    2014-01-01

    The rectifying properties and ultraviolet photoelectric effects in TbMnO3/Nb-doped SrTiO3 heterostructures have been investigated. The ideality factors and the diffusion voltages obtained from the current-voltage curves nonlinearly decrease

  5. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu A [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  6. Mechanical properties and failure behaviour of graphene/silicene/graphene heterostructures

    International Nuclear Information System (INIS)

    Chung, Jing-Yang; Sorkin, Viacheslav; Pei, Qing-Xiang; Zhang, Yong-Wei; Chiu, Cheng-Hsin

    2017-01-01

    Van der Waals heterostructures based on graphene and other 2D materials have attracted great attention recently. In this study, the mechanical properties and failure behaviour of a graphene/silicene/graphene heterostructure are investigated using molecular dynamics simulations. We find that by sandwiching silicene in-between two graphene layers, both ultimate tensile strength and Young’s modulus of the heterostructure increase approximately by a factor of 10 compared with those of stand-alone silicene. By examining the fracture process of the heterostructure, we find that graphene and silicene exhibit quite different fracture behaviour. While graphene undergoes cleavage through its zigzag edge only, silicene can cleave through both its zigzag and armchair edges. In addition, we study the effects of temperature and strain rate on the mechanical properties of the heterostructure and find that an increase in temperature results in a decrease in its mechanical strength and stiffness, while an increase in strain rate leads to an increase in its mechanical strength without significant changes in its stiffness. We further explore the failure mechanism and show that the temperature and strain-rate dependent fracture stress can be accurately described by the kinetic theory of fracture. Our findings provide a deep insight into the mechanical properties and failure mechanism of graphene/silicene heterostructures. (paper)

  7. Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

    Science.gov (United States)

    Mania, E.; Alencar, A. B.; Cadore, A. R.; Carvalho, B. R.; Watanabe, K.; Taniguchi, T.; Neves, B. R. A.; Chacham, H.; Campos, L. C.

    2017-09-01

    Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-type) up to n ~ 2.2  ×  1013 cm-2 while providing excellent charge mobility (μ ~ 25 000 cm2 V-1 s-1). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B  =  0.4 T) at T  =  4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.

  8. Electronic and optical properties of diamond/organic semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

    2007-07-01

    Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

  9. Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Jae-Hoon Lee

    2014-01-01

    Full Text Available A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111 substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET, fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

  10. Superconducting heterostructures: from antipinning to pinning potentials

    International Nuclear Information System (INIS)

    Carreira, S J; Chiliotte, C; Bekeris, V; Rosen, Y J; Monton, C; Schuller, Ivan K

    2014-01-01

    We study vortex lattice dynamics in a heterostructure that combines two type-II superconductors: a niobium film and a dense triangular array of submicrometric vanadium (V) pillars. Magnetic ac susceptibility measurements reveal a sudden increase in ac penetration, related to an increase in vortex mobility above a magnetic field, H ∗ (T), that decreases linearly with temperature. Additionally, temperature independent matching effects that occur when the number of vortices in the sample is an integer of the number of V pillars, strongly reduce vortex mobility, and were observed for the first and second matching fields, H 1 and H 2 . The angular dependence of H 1 , H 2 and H ∗ (T) shows that matching is determined by the normal applied field component, while H ∗ (T) is independent of the applied field orientation. This important result identifies H ∗ (T) with the critical field boundary for the normal to superconducting transition of V pillars. Below H ∗ (T), superconducting V pillars repel vortices, and the array becomes an ‘antipinning’ landscape that is more effective in reducing vortex mobility than the ‘pinning’ landscape of the normal V sites above H ∗ (T). Matching effects are observed both below and above H ∗ (T), implying the presence of ordered vortex configurations for ‘antipinning’ or ‘pinning’ arrays. (paper)

  11. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Geier, Michael L.; Prabhumirashi, Pradyumna L. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Department of Medicine, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-02-10

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup −1} s{sup −1} at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

  12. Large non-volatile tuning of magnetism mediated by electric field in Fe–Al/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure

    International Nuclear Information System (INIS)

    Chen, Zhendong; Gao, Cunxu; Wei, Yanping; Zhang, Peng; Wang, Yutian; Zhang, Chao; Ma, Zhikun

    2017-01-01

    Electric-field control of magnetism is now an attractive trend to approach a new kind of fast, low-power-cost memory device. In this work, we report a strong non-volatile electric control of magnetism in an Fe–Al/Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 heterostructure. In this system, a 90° rotation of the in-plane uniaxial magnetic anisotropy is exhibited during the increase of the external electric field, which means the easy axis turns into a hard axis and the hard axis turns into an easy one. Additionally, a non-volatile switch of the remanence is observed after a sweeping of the electric field from 0 kV cm −1 to  ±  10 kV cm −1 , then back to 0 kV cm −1 . More interestingly, a 20% non-volatile magnetic state tuning driven by individual pulse electric fields is shown in contrast to large tuning up to 120% caused by pulse electric fields with small assistant pulse magnetic fields, which means a 180° reverse of the magnetization. These remarkable behaviors demonstrated in this heterostructure reveal a promising potential application in magnetic memory devices mediated by electric fields. (paper)

  13. Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field

    International Nuclear Information System (INIS)

    Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.

    2011-01-01

    In this work the effects of intense laser on the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga 1-x Al x As quantum wells are studied under, applied electric and magnetic field. The electric field is applied along the growth direction of the quantum well whereas the magnetic field has been considered to be in-plane. The calculations were performed within the density matrix formalism with the use of the effective mass and parabolic band approximations. The intense laser effects are included through the Floquet method, by modifying the confining potential associated to the heterostructure. Results are presented for the nonlinear optical absorption, the nonlinear optical rectification and the resonant peak of these two optical processes. Several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation have been considered. The outcome of the calculation suggests that the nonlinear optical absorption and optical rectification are non-monotonic functions of the dimensions of the heterostructure and of the external perturbations considered in this work.

  14. Tunable magnetization of infrared epsilon-near-zero media via field-effect modulation

    Science.gov (United States)

    Salary, Mohammad Mahdi; Mosallaei, Hossein

    2018-04-01

    In this letter, we demonstrate that field effect modulation enables electrical tuning of the effective permeability of epsilon-near-zero (ENZ) media at infrared frequencies. In particular, hexagonal silicon carbide (6H-SiC) is incorporated as an epsilon-near-zero host in a gated 6H-SiC/SiO2/Si heterostructure. The change in the applied voltage leads to a change in the carrier concentration of the accumulation layer formed at the interface of 6H-SiC and SiO2 which can alter the effective permeability of the heterostructure by virtue of the photonic doping effect. We will rigorously model and analyze the structure by linking charge transport and electromagnetic models. The presented mechanism allows for tuning the impedance and magnetization of ENZ materials in real-time while capturing extreme cases of epsilon-and-mu-near-zero and magnetic conductor. As such, it can be used for various applications such as real-time engineering of thermal emission, dynamic switching, reconfigurable tunneling, and holography.

  15. Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bratkovsky, A M [Hewlett-Packard Laboratories, 1501 Page Mill Road, MS 1123, Palo Alto, CA 94304 (United States)

    2008-02-15

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

  16. Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bratkovsky, A M

    2008-01-01

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field

  17. Spintronic effects in metallic, semiconductor, metal oxide and metal semiconductor heterostructures

    Science.gov (United States)

    Bratkovsky, A. M.

    2008-02-01

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

  18. DC magnetic field sensing based on the nonlinear magnetoelectric effect in magnetic heterostructures

    International Nuclear Information System (INIS)

    Burdin, Dmitrii; Chashin, Dmitrii; Ekonomov, Nikolai; Fetisov, Leonid; Fetisov, Yuri; Shamonin, Mikhail

    2016-01-01

    Recently, highly sensitive magnetic field sensors using the magnetoelectric effect in composite ferromagnetic-piezoelectric layered structures have been demonstrated. However, most of the proposed concepts are not useful for measuring dc magnetic fields, because the conductivity of piezoelectric layers results in a strong decline of the sensor’s sensitivity at low frequencies. In this paper, a novel functional principle of magnetoelectric sensors for dc magnetic field measurements is described. The sensor employs the nonlinear effect of voltage harmonic generation in a composite magnetoelectric structure under the simultaneous influence of a strong imposed ac magnetic field and a weak dc magnetic field to be measured. This physical effect arises due to the nonlinear dependence of the magnetostriction in the ferromagnetic layer on the magnetic field. A sensor prototype comprising of a piezoelectric fibre transducer sandwiched between two layers of the amorphous ferromagnetic Metglas ® alloy was fabricated. The specifications regarding the magnetic field range, frequency characteristics, and noise level were studied experimentally. The prototype showed the responsivity of 2.5 V mT −1 and permitted the measurement of dc magnetic fields in the range of ∼10 nT to about 0.4 mT. Although sensor operation is based on the nonlinear effect, the sensor response can be made linear with respect to the measured magnetic field in a broad dynamic range extending over 5 orders of magnitude. The underlying physics is explained through a simplified theory for the proposed sensor. The functionality, differences and advantages of the magnetoelectric sensor compare well with fluxgate magnetometers. The ways to enhance the sensor performance are considered. (paper)

  19. Understanding the interfacial properties of graphene-based materials/BiOI heterostructures by DFT calculations

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Wen-Wu [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China); Zhao, Zong-Yan, E-mail: zzy@kmust.edu.cn [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China); Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093 (China)

    2017-06-01

    Highlights: • Heterostructure constructing is an effective way to enhance the photocatalytic performance. • Graphene-like materials and BiOI were in contact and formed van der Waals heterostructures. • Band edge positions of GO/g-C{sub 3}N{sub 4} and BiOI changed to form standard type-II heterojunction. • 2D materials can promote the separation of photo-generated electron-hole pairs in BiOI. - Abstract: Heterostructure constructing is a feasible and powerful strategy to enhance the performance of photocatalysts, because they can be tailored to have desirable photo-electronics properties and couple distinct advantageous of components. As a novel layered photocatalyst, the main drawback of BiOI is the low edge position of the conduction band. To address this problem, it is meaningful to find materials that possess suitable band gap, proper band edge position, and high mobility of carrier to combine with BiOI to form hetertrostructure. In this study, graphene-based materials (including: graphene, graphene oxide, and g-C{sub 3}N{sub 4}) were chosen as candidates to achieve this purpose. The charge transfer, interface interaction, and band offsets are focused on and analyzed in detail by DFT calculations. Results indicated that graphene-based materials and BiOI were in contact and formed van der Waals heterostructures. The valence and conduction band edge positions of graphene oxide, g-C{sub 3}N{sub 4} and BiOI changed with the Fermi level and formed the standard type-II heterojunction. In addition, the overall analysis of charge density difference, Mulliken population, and band offsets indicated that the internal electric field is facilitate for the separation of photo-generated electron-hole pairs, which means these heterostructures can enhance the photocatalytic efficiency of BiOI. Thus, BiOI combines with 2D materials to construct heterostructure not only make use of the unique high electron mobility, but also can adjust the position of energy bands and

  20. Coupling effects in heterostructures of pentacene and perfluorinated pentacene studied by optical spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Broch, Katharina; Heinemeyer, Ute; Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Anger, Falk [Institut fuer Angewandte Physik, Tuebingen (Germany); MATGAS 2000 AIE, Campus de la UAB, Bellaterra (Spain); Osso, Oriol [MATGAS 2000 AIE, Campus de la UAB, Bellaterra (Spain); Scholz, Reinhard [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

    2010-07-01

    Heterostructures of organic semiconductors gain increasing interest in the last years because of their potential applications in organic electronics. To optimize those devices the understanding of the intermolecular coupling is crucial. Therefore, we investigate the optical absorption spectra of heterostructures and possible differences to the spectra of their single components. The combination of pentacene (PEN) with perfluorinated pentacene (PFP) is promising due to their similar geometric structure which can give rise to coevaporated films with a significant level of intermixing and accordingly an efficient intermolecular coupling. Indeed, performing in-situ-measurements with differential reflectance spectroscopy and spectroscopic ellipsometry we find features in the absorption spectra of mixed films that cannot be explained by a linear combination of the single film spectra. In the energy range between 1.4 eV and 2.4 eV spectra of PFP and PEN single and coevaporated films with different mixing ratios are compared and possible theoretical scenarios for coupling effects are discussed.

  1. Novel electronic properties of a new MoS{sub 2}/TiO{sub 2} heterostructure and potential applications in solar cells and photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yanhua [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Cai, Congzhong, E-mail: czcai@cqu.edu.cn [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Gu, Yonghong [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Chongqing Key Laboratory on Optoelectronic Functional Materials, Chongqing Normal University, Chongqing 401331 (China); Cheng, Wende [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Department of Physics, Chongqing University of Science and Technology, Chongqing 401331 (China); Xiong, Wen [Department of Physics, Chongqing University, Chongqing 401331 (China); Zhao, Chengjun [State Key Laboratory of Coal Disaster Dynamics and Control, Department of Applied Physics, Chongqing University, Chongqing 400044 (China)

    2017-08-31

    Highlights: • The Moiré patterns of a new MoS{sub 2}/TiO{sub 2} heterostructure are investigated. • The novel electronic properties of the new heterostructure are discovered. • The MoS{sub 2}/TiO{sub 2} superlattice is found to have similar electronic properties to the bilayer heterostructure. • Two novel design schemes based on the MoS{sub 2}/TiO{sub 2} heterostructure and superlattice are proposed for a solar cell and photocatalyst, respectively. - Abstract: The structural and electronic properties of two-dimensional (2D) MoS{sub 2}/TiO{sub 2} heterostructure with a special configuration of Moiré pattern have been investigated for the first time using first-principles methods with van der Waals correction. It is found that the new van der Waals heterostructure is of a type-II band alignment between the MoS{sub 2} and TiO{sub 2} layers, and the electronic structures of monolayer MoS{sub 2} and 2D TiO{sub 2} are well retained in their respective layers due to a weak interlayer coupling, which suggests that the heterostructure may have potential applications in many fields such as photoelectric devices, photocatalysis, energy conversion and storage, etc. Meanwhile, the heterostructure can also provide an ideal platform of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) for fundamental research such as spin Hall effect, etc. In addition, it is discovered that the corresponding MoS{sub 2}/TiO{sub 2} superlattice also has similar electronic properties to MoS{sub 2}/TiO{sub 2} bilayer heterostructure. Furthermore, two novel design schemes based on the MoS{sub 2}/TiO{sub 2} heterostructure and superlattice are proposed for a solar cell and photocatalyst, respectively.

  2. Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure.

    Science.gov (United States)

    Ding, Yi-Min; Shi, Jun-Jie; Xia, Congxin; Zhang, Min; Du, Juan; Huang, Pu; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang

    2017-10-05

    To enhance the low hole mobility (∼40 cm 2 V -1 s -1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V -1 s -1 ) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 10 4 cm 2 V -1 s -1 , which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 10 3 cm 2 V -1 s -1 . The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility.

  3. Organic heterostructures deposited by MAPLE on AZO substrate

    Science.gov (United States)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Stanculescu, F.; Iftimie, S.; Girtan, M.; Popescu-Pelin, G.; Socol, G.

    2017-09-01

    Organic heterostructures based on poly(3-hexylthiophene) (P3HT) and fullerene (C60) as blends or multilayer were deposited on Al:ZnO (AZO) by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. The AZO layers were obtained by Pulsed Laser Deposition (PLD) on glass substrate, the high quality of the films being reflected by the calculated figure of merit. The organic heterostructures were investigated from morphological, optical and electrical point of view by atomic force microscopy (AFM), UV-vis spectroscopy, photoluminescence (PL) and current-voltage (I-V) measurements, respectively. The increase of the C60 content in the blend heterostructure has as result a high roughness. Compared with the multilayer heterostructure, those based on blends present an improvement in the electrical properties. Under illumination, the highest current value was recorded for the heterostructure based on the blend with the higher C60 amount. The obtained results showed that MAPLE is a useful technique for the deposition of the organic heterostructures on AZO as transparent conductor electrode.

  4. Magnetoelectric coupling characteristics in multiferroic heterostructures with different thickness of nanocrystalline soft magnetic alloy

    Science.gov (United States)

    Chen, Lei; Wang, Yao

    2016-05-01

    Magnetoelectric(ME) coupling characteristics in multiferroic heterostructures with different thickness of nanocrystalline soft magnetic alloy has been investigated at low frequency. The ME response with obvious hysteresis, self-biased and dual-peak phenomenon is observed for multiferroic heterostructures, which results from strong magnetic interactions between two ferromagnetic materials with different magnetic properties, magnetostrictions and optimum bias magnetic fields Hdc,opti. The proposed multiferroic heterostructures not only enhance ME coupling significantly, but also broaden dc magnetic bias operating range and overcomes the limitations of narrow bias range. By optimizing the thickness of nanocrystalline soft magnetic alloy Tf, a significantly zero-biased ME voltage coefficient(MEVC) of 14.8mV/Oe (185 mV/cmṡ Oe) at Tf = 0.09 mm can be obtained, which is about 10.8 times as large as that of traditional PZT/Terfenol-D composite with a weak ME coupling at zero bias Hdc,zero. Furthermore, when Tf increases from 0.03 mm to 0.18 mm, the maximum MEVC increases nearly linearly with the increased Tf at Hdc,opti. Additionally, the experimental results demonstrate the ME response for multiferroic heterostructures spreads over a wide magnetic dc bias operating range. The excellent ME performance provides a promising and practicable application for both highly sensitive magnetic field sensors without bias and ME energy harvesters.

  5. La-doped BaTiO3 heterostructures: Compensating the polarization discontinuity

    Directory of Open Access Journals (Sweden)

    D. P. Kumah

    2013-12-01

    Full Text Available We demonstrate a route to manipulate the polarization and internal electric field of a complex oxide heterostructure using a layering sequence based on the LaAlO3-SrTiO3 interface. By combining sensitive atomic-level mapping of the structure using direct x-ray phase-retrieval methods with theoretical modeling of the electrostatic charge and polarization, we have devised a novel single-domain polar heterostructure. We find that ionic rearrangement results in strain and free energy minimization, and eliminates the polarization discontinuity leading to a two-fold increase of the spontaneous polarization towards the surface of an ultra-thin single-domain BaTiO3 film.

  6. Tuning Light Emission of a Pressure-Sensitive Silicon/ZnO Nanowires Heterostructure Matrix through Piezo-phototronic Effects.

    Science.gov (United States)

    Chen, Mengxiao; Pan, Caofeng; Zhang, Taiping; Li, Xiaoyi; Liang, Renrong; Wang, Zhong Lin

    2016-06-28

    Based on white light emission at silicon (Si)/ZnO hetrerojunction, a pressure-sensitive Si/ZnO nanowires heterostructure matrix light emitting diode (LED) array is developed. The light emission intensity of a single heterostructure LED is tuned by external strain: when the applied stress keeps increasing, the emission intensity first increases and then decreases with a maximum value at a compressive strain of 0.15-0.2%. This result is attributed to the piezo-phototronic effect, which can efficiently modulate the LED emission intensity by utilizing the strain-induced piezo-polarization charges. It could tune the energy band diagrams at the junction area and regulate the optoelectronic processes such as charge carriers generation, separation, recombination, and transport. This study achieves tuning silicon based devices through piezo-phototronic effect.

  7. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mehnke, Frank, E-mail: mehnke@physik.tu-berlin.de; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, Michael [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-05-21

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al{sub x}Ga{sub 1−x}N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al{sub 0.7}Ga{sub 0.3}N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA.

  8. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

    International Nuclear Information System (INIS)

    Mehnke, Frank; Kuhn, Christian; Stellmach, Joachim; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim; Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens; Kneissl, Michael

    2015-01-01

    The effects of the heterostructure design on the injection efficiency and external quantum efficiency of ultraviolet (UV)-B light emitting diodes (LEDs) have been investigated. It was found that the functionality of the Al x Ga 1−x N:Mg electron blocking layer is strongly influenced by its aluminum mole fraction x and its magnesium doping profile. By comparing LED electroluminescence, quantum well photoluminescence, and simulations of LED heterostructure, we were able to differentiate the contributions of injection efficiency and internal quantum efficiency to the external quantum efficiency of UV LEDs. For the optimized heterostructure using an Al 0.7 Ga 0.3 N:Mg electron blocking layer with a Mg to group III ratio of 4% in the gas phase the electron leakage currents are suppressed without blocking the injection of holes into the multiple quantum well active region. Flip chip mounted LED chips have been processed achieving a maximum output power of 3.5 mW at 290 mA and a peak external quantum efficiency of 0.54% at 30 mA

  9. Carbon doped InAlAs/InGaAs/InAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Hirmer, Marika; Bougeard, Dominique; Schuh, Dieter [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D 93040 Regensburg (Germany); Wegscheider, Werner [Laboratorium fuer Festkoerperphysik, ETH Zuerich, 8093 Zuerich (Switzerland)

    2011-07-01

    InAlAs/InGaAs heterostructures with a high In content are promising candidates for spintronic applications such as spin-valve mesoscopic devices due to their large Lande g-factor (around 15 in InAs) and the large Rashba effect. Here, we present results on carbon doped InGaAs/InAlAs heterostructures with embedded InAs channel. We got a two-dimensional hole gas with a hole density of p = 1.06*10{sup 12} cm{sup -2} and a hole mobility of 7.26*10{sup 3} cm{sup 2}/Vs. Magnetotransport measurements on L-shaped Hall bars along [011], [01-1], [010] and [001] crystal directions exhibit well-developed Shubnikov-de-Haas oscillations and quantum Hall plateaus, indicating the high quality of the material. In the field range from minus 6T to 6T the longitudinal resistance is superimposed with a negative parabolic magnetoresistance background. The minimum of the longitudinal resistance at B = 0T decreases with increasing temperature, and hence, is a sign for weak antilocalization.

  10. Coherently Strained Si-SixGe1-x Core-Shell Nanowire Heterostructures.

    Science.gov (United States)

    Dillen, David C; Wen, Feng; Kim, Kyounghwan; Tutuc, Emanuel

    2016-01-13

    Coherently strained Si-SixGe1-x core-shell nanowire heterostructures are expected to possess a positive shell-to-core conduction band offset, allowing for quantum confinement of electrons in the Si core. We report the growth of epitaxial, coherently strained Si-SixGe1-x core-shell heterostructures through the vapor-liquid-solid mechanism for the Si core, followed in situ by the epitaxial SixGe1-x shell growth using ultrahigh vacuum chemical vapor deposition. The Raman spectra of individual nanowires reveal peaks associated with the Si-Si optical phonon mode in the Si core and the Si-Si, Si-Ge, and Ge-Ge vibrational modes of the SixGe1-x shell. The core Si-Si mode displays a clear red-shift compared to unstrained, bare Si nanowires thanks to the lattice mismatch-induced tensile strain, in agreement with calculated values using a finite-element continuum elasticity model combined with lattice dynamic theory. N-type field-effect transistors using Si-SixGe1-x core-shell nanowires as channel are demonstrated.

  11. Heterostructures and quantum devices

    CERN Document Server

    Einspruch, Norman G

    1994-01-01

    Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

  12. Voltage-controlled ferromagnetism and magnetoresistance in LaCoO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Hu, Chengqing; Park, Keun Woo; Yu, Edward T.; Posadas, Agham; Demkov, Alexander A.; Jordan-Sweet, Jean L.

    2013-01-01

    A LaCoO 3 /SrTiO 3 heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO 3 , leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO 3 layer on strain. Below the Curie temperature of the LaCoO 3 layer, this effect leads to modulation of resistance in LaCoO 3 as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO 3 . Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO 3 layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO 3 grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device

  13. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  14. Large electrical manipulation of permittivity in BaTiO3 and Pb(Zr,Ti)O3 bimorph heterostructure

    International Nuclear Information System (INIS)

    Ci, Penghong; Liu, Guoxi; Dong, Shuxiang; Zhang, Li

    2014-01-01

    We report a strain-mediated electric field manipulation of permittivity in BaTiO 3 (barium titanate, BT) ceramic by a Pb(Zr,Ti)O 3 (PZT) bimorph. This BT/PZT heterostructure exhibited a relatively large permittivity tunability of BT up to ±10% in a wide frequency range under an electric field of ±4 kV/cm applied to the PZT bimorph. The permittivity tunability is attributed to the strain in BT produced by the PZT bimorph. Calculations of the relationship between permittivity and applied electric field were developed, and corresponded well with measurements. The BT/PZT heterostructure has potential for applications in broadband field tunable smart electronic devices.

  15. Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

    International Nuclear Information System (INIS)

    Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.

    2010-01-01

    Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga 1-x Al x As QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.

  16. Designing Diameter-Modulated Heterostructure Nanowires of PbTe/Te by Controlled Dewetting.

    Science.gov (United States)

    Kumar, Abinash; Kundu, Subhajit; Samantaray, Debadarshini; Kundu, Paromita; Zanaga, Daniele; Bals, Sara; Ravishankar, N

    2017-12-13

    Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synthesized primarily using vapor phase methods. Here, we present a simple wet chemical routine to synthesize heterostructures of PbTe/Te using Te nanowires as templates. A morphology evolution study for the formation of these heterostructures has been performed. On the basis of these control experiments, a pathway for the formation of these nanostructures is proposed. Reduction of a Pb precursor to Pb on Te nanowire templates followed by interdiffusion of Pb/Te leads to the formation of a thin shell of PbTe on the Te wires. Controlled dewetting of the thin shell leads to the formation of cube-shaped PbTe that is periodically arranged on the Te wires. Using control experiments, we show that different reactions parameters like rate of addition of the reducing agent, concentration of Pb precursor and thickness of initial Te nanowire play a critical role in controlling the spacing between the PbTe cubes on the Te wires. Using simple surface energy arguments, we propose a mechanism for the formation of the hybrid. The principles presented are general and can be exploited for the synthesis of other nanoscale heterostructures.

  17. Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Baladés, N., E-mail: nuria.balades@uca.es [INNANOMAT Group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Herrera, M.; Sales, David L.; Delgado, F.J. [INNANOMAT Group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Hernández-Maldonado, D.; Ramasse, Q.M. [SuperSTEM Laboratory, SciTech Daresbury Campus, Keckwick Lane, Warrington WA4 4AD (United Kingdom); Pizarro, J.; Galindo, P. [Department of Computer Engineering, University of Cádiz, Avda. de la Universidad de Cádiz, no 10, 11519 Cádiz (Spain); González, M. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); Sotera Defense Solutions, 430 National Business Pkwy # 100, Annapolis Junction, MD 20701 (United States); Abell, J.; Tomasulo, S.; Walters, J.R. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); and others

    2017-02-15

    Highlights: • The red shift in the photoluminescence emission of InAlAsSb layers is due to small and gradual compositional fluctuations, rather than in the form of atomically sharp transitions. • The composition fluctuations in InAlAsSb active layers do not cause strong variations of the lattice parameter. • The strain due to composition fluctuations in the InGaAs buffer layer does not have a strong effect in the InAlAsSb active layer. • The 2D nature of the TEM-STEM techniques is an important limitation for the analysis of 3D small compositional fluctuations in quaternary semiconductors. - Abstract: In this work, we have characterized by transmission electron microscopy techniques the structural properties of InAlAsSb/InGaAs/InP heterostructures, with target applications in high efficiency solar cells. Previous photoluminescence (PL) analysis suggested the existence of compositional fluctuations in the active layer of these heterostructures. 220 bright field (BF) diffraction contrast micrographs have revealed strong strain contrast in the InGaAs buffer layer, related to the existence of these compositional fluctuations. The effect of a decomposed buffer on the growth of the InAlAsSb layer has been analyzed through the simulation of the strain fields in the heterostructure using the finite elements method (FEM). These simulations have shown that the strain in the buffer layer due to the compositional fluctuations only affects the first few nm of the InAlAsSb layer. The analysis by aberration corrected high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS) of the composition of the InAlAsSb layer reveals that any compositional fluctuation is only observed as an average effect, rather than in the form of clustering or atomically sharp transitions. The limitations of these techniques for the detection of small 3D compositional fluctuations are discussed.

  18. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    International Nuclear Information System (INIS)

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-01-01

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N 2 -rich (O 2 -lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: → Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. → Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. → CNTs in heterostructures decompose between 600 and 750 deg. C in N 2 -rich atmosphere. → Metallic species in heterostructures were oxidized at higher temperatures.

  19. Use of the AlGaAs native oxide in AlGaAs-GaAs quantum well heterostructure laser devices

    International Nuclear Information System (INIS)

    Ries, M.J.; Chen, E.I.; Holonyak, Chen N. Jr.

    1995-01-01

    At atmospheric conditions high Al Composition Al x Ga 1-x As (x ≥0.7) in Al x Ga 1-x As-GaAs heterostructures is subject to failure via hydrolyzation. In contrast, open-quotes wetclose quotes oxidation at higher temperatures (≥400 degrees C) produces stable AlGaAs native oxides that prove to be useful in quantum well heterostructure devices. The open-quotes wetclose quotes oxidation process results in the conversion of high Al composition heterostructure material into a stable low refractive index, current-blocking native oxide, which can be used to define cavities and current paths. The oxidation can be used to passivate exposed Al-bearing surfaces. Its selective, anisotropic nature is also useful for the fabrication of both planar and non-planar devices, including buried-oxide heterostructures. The III-V native oxide has been used in the fabrication of single-stripe and stripe array lasers, ring lasers, coupled-cavity lasers, buried-oxide verticle cavity lasers, deep-oxide waveguides, deep-oxide lasers, and high reliability LED's. Also, the native oxide of A1As has been demonstrated in field effect transistor operation. The use of the III-V native oxide in various device applications is described

  20. Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD2, Sector III, Salt Lake City, Kolkata 700 098 (India); Chaudhuri, Arka [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India); Department of Applied Science, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India); Das, Avishek [Department of Electronic Science, University of Calcutta, 92 APC Road, Kolkata 700009 (India); Mandal, Kalyan [Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake City, Kolkata 700 098 (India)

    2016-01-18

    Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, which demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.

  1. Superconducting spin valves based on epitaxial Fe/V-hybrid thin film heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Nowak, Gregor

    2010-12-10

    This study presents a systematic investigation of the SSV effect in FM/SC/FM and FM/N/FM/SC heterostructures. Before investigating the actual SSV effect, we first pre-analyzed structural, magnetic and superconducting properties of the Fe/V system. In these preliminary studies we demonstrated, that epitaxial Fe/V heterostructures of superior crystalline quality can be grown by DC sputter deposition. With a Fe/V interface thickness of only one monolayer, the chemical separation of the Fe and V layers is extremely sharp. Moreover, the magnetic investigation showed that from thicknesses of two Fe(001) monolayers on the Fe layers in the superlattice possess a magnetic moment. Furthermore, we demonstrated the interlayer exchange coupling as oscillatory function of the V interlayer thickness. The investigations of the superconducting parameters of the Fe/V system revealed a non-monotonic T{sub S} vs. d{sub Fe} dependence in sample series (1). This observation proves the presence of the FM/SC proximity effect. The studies of various heterostructures of the design AFM/FM/SC/FM revealed a strong counteracting influence on the SSV effect, the stray field effect. The sample containing Fe{sub 25}V{sub 75} alloy layers, has the highest ratio of Cooper pair coherence length and superconductor thickness (ξ{sub S})/(d{sub S}), and its superconducting transition temperature is comparable to the sample with Fe{sub 35}V{sub 65} alloy layers. Nevertheless, the SSV effect in sample Fe{sub 25}V{sub 75} with alloy layers is much smaller than in sample with Fe{sub 35}V{sub 65} alloy layers. For a high-performance superconducting spin valve based on a FM1/SC/FM2 heterostructure at least four parameters have to be optimized simultaneously. 1. The magnetic domain size in FM1 and FM2 has to be as large as possible in order to reduce the stray field effect resulting from magnetization components in the FM domain walls perpendicular to the SC layer. 2. When using ferromagnetic alloys as

  2. AlN/GaN heterostructures for normally-off transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.; Tereshenko, O. E. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Abgaryan, K. K.; Reviznikov, D. L. [Dorodnicyn Computing Centre of the Russian Academy of Sciences (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Parnes, Ya. M.; Tikhomirov, V. G. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Prosvirin, I. P. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

    2017-03-15

    The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

  3. Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T

    Energy Technology Data Exchange (ETDEWEB)

    Mironov, O.A.; Myronov, M.; Durov, S.; Drachenko, O.; Leotin, J

    2004-04-30

    Microminiature Hall probes with sensitive area down to 33x115 {mu}m and based on n-InSb/i-GaAs optimized Sn-doped MBE-grown heterostructures are reported. The 'metallurgical' thicknesses of the n-InSb epilayers lie in the range d{sup m}=1.1-10.5 {mu}m giving room-temperature mobilities of (9-15)x10{sup 3} cm{sup 2}/Vs with carrier densities of (0.96-2.56)x10{sup 18} cm{sup -3}. Characterization of the devices was performed by magnetotransport measurements in quasi-static and pulsed magnetic fields. In the temperature range 1.1-300 K and in magnetic fields up to 12 T (static) and up to 52 T (pulsed, {tau}=120 mS), transport measurements yield remarkable linearity of the Hall voltage up to 52 T and sensitivity, as well as demonstrating the high-temperature stability of the Hall voltage, the offset voltage and the device resistivity. No significant effect of the high current up to 150 mA on either the sensitivity or the resistivity is observed.

  4. Strong magnetization and Chern insulators in compressed graphene/CrI 3 van der Waals heterostructures

    Science.gov (United States)

    Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Xue, Yang; Ma, Chunlan; Yang, Zhongqin

    2018-02-01

    Graphene-based heterostructures are a promising material system for designing the topologically nontrivial Chern insulating devices. Recently, a two-dimensional monolayer ferromagnetic insulator CrI3 was successfully synthesized in experiments [B. Huang et al., Nature (London) 546, 270 (2017), 10.1038/nature22391]. Here, these two interesting materials are proposed to build a heterostructure (Gr /CrI3). Our first-principles calculations show that the system forms a van der Waals (vdW) heterostructure, which is relatively facilely fabricated in experiments. A Chern insulating state is acquired in the Gr /CrI3 heterostructure if the vdW gap is compressed to a distance between about 3.3 and 2.4 Å, corresponding to a required external pressure between about 1.4 and 18.3 GPa. Amazingly, very strong magnetization (about 150 meV) is found in graphene, induced by the substrate CrI3, despite the vdW interactions between them. A low-energy effective model is employed to understand the mechanism. The work functions, contact types, and band alignments of the Gr /CrI3 heterostructure system are also studied. Our work demonstrates that the Gr /CrI3 heterostructure is a promising system to observe the quantum anomalous Hall effect at high temperatures (up to 45 K) in experiments.

  5. In-situ anion exchange fabrication of porous ZnO/ZnSe heterostructural microspheres with enhanced visible light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hairui, E-mail: liuhairui1@126.com [College of Physics & Electrics Engineering, Henan Normal University, Henan Key Laboratory of Photovoltaic Materials, Xinxiang 453007 (China); Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, Shanxi, 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024 (China); Hu, Yanchun [College of Physics & Electrics Engineering, Henan Normal University, Henan Key Laboratory of Photovoltaic Materials, Xinxiang 453007 (China); He, Xia [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, Shanxi, 030024 (China); Jia, Husheng, E-mail: jia_husheng@126.com [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, Shanxi, 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024 (China); Liu, Xuguang; Xu, Bingshe [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, Shanxi, 030024 (China)

    2015-11-25

    Porous ZnO microspheres were fabricated by an ultrasonic irradiation technique. Subsequently, through a facile in-situ anion exchange reaction between the ZnO microsphere and sodium selenite, spherical ZnO/ZnSe heterostructures with different ratios of the two components were fabricated. The as-obtained products were characterized by field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and UV–vis spectrometry. The results reveal that the secondary ZnSe nanoparticles are grown on the surface of pre-grown ZnO microspheres. Compared with pure ZnO microspheres, the ZnO/ZnSe hetero-microspheres show enhance visible-light photocatalytic activity for degradation of methylene blue (MB) and 4-nitrophenol (4-NP). The enhanced photocatalytic performance is attributed to fast separation and transport of photogenerated electrons and holes derived from the coupling effect of ZnSe and ZnO heterostructure. Photoluminescent spectra further indicate that the ZnO/ZnSe heterostructures greatly suppress the charge recombination of photogenerated electron–hole pairs, which would be beneficial to improve their photocatalytic activity. Finally, the photocatalytic mechanism of the ZnO/ZnSe heterostructures is proposed. - Graphical abstract: Porous ZnO/ZnSe heterostructures with different ratios of the two components were fabricated and present enhance visible-light photocatalytic activity for degradation of methylene blue (MB) and 4-nitrophenol (4-NP). The enhanced photocatalytic performance is attributed to fast separation and transport of photogenerated electrons and holes derived from the coupling effect of ZnSe and ZnO heterostructure. - Highlights: • Spherical ZnO/ZnSe porous composites were fabricated by in-situ anion exchange. • ZnO/ZnSe composites exhibited enhanced visible-light photocatalytic activity. • The matching band gap improves the separation of

  6. Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

    Science.gov (United States)

    Ni, Yi-Qiang; He, Zhi-Yuan; Yao, Yao; Yang, Fan; Zhou, De-Qiu; Zhou, Gui-Lin; Shen, Zhen; Zhong, Jian; Zheng, Yue; Zhang, Bai-Jun; Liu, Yang

    2015-05-01

    We report a novel structure of AlGaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair-doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio (˜ 109). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Project of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph.D. Program Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

  7. Heterostructures based on inorganic and organic van der Waals systems

    International Nuclear Information System (INIS)

    Lee, Gwan-Hyoung; Lee, Chul-Ho; Zande, Arend M. van der; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Hone, James; Nuckolls, Colin; Heinz, Tony F.; Kim, Philip

    2014-01-01

    The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS 2 heterostructures for memory devices; graphene/MoS 2 /WSe 2 /graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors

  8. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

    International Nuclear Information System (INIS)

    Takimoto, Takuma; Takeshita, Koji; Nakamura, Seiji; Okumura, Tsugunori

    2014-01-01

    We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) density and mobility at the AlGaN/GaN interface with increasing exposure time. The decrease in 2DEG density suggests that plasma-induced disordering partly extinguishes the piezo-polarization of the AlGaN layer, that the effective Schottky barrier height is increased by the introduction of negatively changed defects, or that the negatively charged defects induced during plasma exposure deactivate or compensate Si donors. In addition, we investigated the postannealing behavior of plasma-induced defects in the AlGaN/GaN heterostructure as well as in the n-GaN layer under an applied bias voltage. - Highlights: • We have investigated the electrical characteristics of the AlGaN/GaN heterostructure. • Electrons under the AlGaN/GaN interface are decreased by plasma exposure. • Post-annealing treatment with gate bias recovers the degradation caused by defects

  9. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala

    2016-11-21

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation. © 2016 IOP Publishing Ltd.

  10. 2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications

    Science.gov (United States)

    Cheng, Kai; Guo, Yu; Han, Nannan; Jiang, Xue; Zhang, Junfeng; Ahuja, Rajeev; Su, Yan; Zhao, Jijun

    2018-04-01

    Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.

  11. Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

    Science.gov (United States)

    Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

    2014-12-19

    Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

  12. Rare-earth nickelates RNiO3: thin films and heterostructures

    Science.gov (United States)

    Catalano, S.; Gibert, M.; Fowlie, J.; Íñiguez, J.; Triscone, J.-M.; Kreisel, J.

    2018-04-01

    This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO3 where R is a trivalent rare-earth R  =  La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron–lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.

  13. Ge/Si core/multi shell heterostructure FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  14. Graphene diamond-like carbon films heterostructure

    International Nuclear Information System (INIS)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-01-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  15. 2D Vertical Heterostructures for Novel Tunneling Device Applications

    Science.gov (United States)

    2017-03-01

    2D Vertical Heterostructures for Novel Tunneling Device Applications Philip M. Campbell, Christopher J. Perini, W. Jud Ready, and Eric M. Vogel...School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA, USA 30332 Abstract: Vertical heterostructures...digital logic, signal processing, analog-to-digital conversion, and high-frequency communications, vertical heterostructure tunneling devices have

  16. Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields.

    Science.gov (United States)

    Duque, Carlos M; Mora-Ramos, Miguel E; Duque, Carlos A

    2012-08-31

    : In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.

  17. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  18. Effect of spin-orbit coupling on the wave vector and spin dependent transmission probability for the GaN/AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    Li, M; Zhao, Z B; Fan, L B

    2015-01-01

    The effect of the Rashba and Dresselhaus spin–orbit coupling (SOC) on the transmission of electrons through the GaN/AlGaN/GaN heterostructure is studied. It is found that the Dresselhaus SOC causes the evident dependence of the transmission probability on the spin polarization and the in-plane wave vector of electrons, and also induces evident spin splitting of the resonant peaks in the (E z -k) plane. Because the magnitude of the Rashba SOC is relatively small, its effect on the transmission of electrons is much less. As k increases, the peaks of transmission probability for spin-up electrons (T + ) shift to a higher energy region and increase in magnitude, while the peaks of transmission probability for spin-down electrons (T − ) shift to a lower energy region and decrease in magnitude. The polarization efficiency (P) is found to peak at the resonant energies and increases with the in-plane wave vector. Moreover, the built-in electric field caused by the spontaneous and piezoelectric polarization can increase the amplitude of P. Results obtained here are helpful for the efficient spin injection into the III-nitride heterostructures by nonmagnetic means from the device point of view. (paper)

  19. Photopatterning of heterostructured polymer Langmuir-Blodgett films

    International Nuclear Information System (INIS)

    Li Tiesheng; Mitsuishi, Masaya; Miyashita, Tokuji

    2008-01-01

    Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication

  20. Effect of annealing on SiO{sub x}-TiO{sub 2} axial heterostructure nanowires and improved photodetection

    Energy Technology Data Exchange (ETDEWEB)

    Dhar, J. C.; Singh, N. K. [Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Dimapur, Nagaland 797103 (India); Mondal, A., E-mail: aniruddhamo@gmail.com; Chakrabartty, S. [Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania, Tripura (West) 799055 (India); Bhattacharyya, A. [Department of Radio Physics and Electronics, University of Calcutta, Kolkata 700009 (India); Chattopadhyay, K. K. [Department of Physics, Jadavpur University, Kolkata 700032 (India)

    2013-12-28

    Glancing angle deposition technique has been used to synthesize the axial heterostructure SiO{sub x}-TiO{sub 2} nanowires (NWs) on the Si substrate. The field emission gun scanning electron microscope image shows the formation of perpendicular NWs on Si substrate. A typical transmission electron microscope image confirms the heterostructure NW which consists of SiO{sub x} of length ∼130 nm and TiO{sub 2} of length ∼170 nm. The amorphous NWs transformed to polycrystalline nature after annealing. The trap assisted radiative recombination process is absent for the annealed NWs. An averagely 1.1 fold enhanced photoabsorption was exhibited by the annealed NWs in the 200–350 nm region and 1.5 fold in the 500–850 nm region. The leakage current (2.6 × 10{sup −8} A/cm{sup 2} at −0.5 V) significantly reduced for annealed NWs device. A maximum 1.4 × 10{sup 3} times enlarged photodetection has been observed for annealed device.

  1. Size and strain tunable band alignment of black-blue phosphorene lateral heterostructures.

    Science.gov (United States)

    Li, Yan; Ma, Fei

    2017-05-17

    Single-element lateral heterostructures composed of black and blue phosphorene are not only free from lattice mismatch but also exhibit rich physical properties related to the seamlessly stitched interfaces, providing the building blocks for designing atomically thin devices. Using first-principles calculations, we investigate the influence of interface structure, size effect and strain engineering on the electronic structure, effective masses and band alignment of black-blue phosphorene lateral heterostructures. The lateral heterostructure with an octatomic-ring interface presents a strong metallic feature due to the interface states, while a metal-semiconductor transition takes place in the system with a hexatomic-ring interface upon hydrogen passivation. Following a reciprocal scaling law, the band gap is tuned in a wide energy range by synchronously increasing the widths of black and blue phosphorene or by only widening that of black phosphorene. Moreover, type-II band alignment is observed in the width ranges of 2.0-3.1 nm and 3.7-4.2 nm, out of which it is type-I. However, the band gap and effective masses show small changes if only the width of blue phosphorene is altered. When the lateral heterostructure is tensile loaded, the effective mass ratio of hole to electron is enlarged by an order of magnitude at a strain of 4% along the zigzag direction. Meanwhile, the band alignment undergoes a crossover from type-I to type-II at a strain of 2%, facilitating efficient electron-hole separation for light detection and harvesting.

  2. Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

    Science.gov (United States)

    Hanna, Mina J.; Zhao, Han; Lee, Jack C.

    2012-10-01

    We analyze the anomalous I-V behavior in SiN prepared by plasma enhanced chemical vapor deposition for use as a gate insulator in AlGaN/GaN metal insulator semiconductor heterostructure filed effect transistors (HFETs). We observe leakage current across the dielectric with opposite polarity with respect to the applied electric field once the voltage sweep reaches a level below a determined threshold. This is observed as the absolute minimum of the leakage current does not occur at minimum voltage level (0 V) but occurs earlier in the sweep interval. Curve-fitting analysis suggests that the charge-transport mechanism in this region is Poole-Frenkel current, followed by Schottky emission due to band bending. Despite the current anomaly, the sample devices have shown a notable reduction of leakage current of over 2 to 6 order of magnitudes compared to the standard Schottky HFET. We show that higher pressures and higher silane concentrations produce better films manifesting less trapping. This conforms to our results that we reported in earlier publications. We found that higher chamber pressure achieves higher sheet carrier concentration that was found to be strongly dependent on the trapped space charge at the SiN/GaN interface. This would suggest that a lower chamber pressure induces more trap states into the SiN/GaN interface.

  3. Photonic slab heterostructures based on opals

    Science.gov (United States)

    Palacios-Lidon, Elisa; Galisteo-Lopez, Juan F.; Juarez, Beatriz H.; Lopez, Cefe

    2004-09-01

    In this paper the fabrication of photonic slab heterostructures based on artificial opals is presented. The innovated method combines high-quality thin-films growing of opals and silica infiltration by Chemical Vapor Deposition through a multi-step process. By varying structure parameters, such as lattice constant, sample thickness or refractive index, different heterostructures have been obtained. The optical study of these systems, carried out by reflectance and transmittance measurements, shows that the prepared samples are of high quality further confirmed by Scanning Electron Microscopy micrographs. The proposed novel method for sample preparation allows a high control of the involved structure parameters, giving the possibility of tunning their photonic behavior. Special attention in the optical response of these materials has been addressed to the study of planar defects embedded in opals, due to their importance in different photonic fields and future technological applications. Reflectance and transmission measurements show a sharp resonance due to localized states associated with the presence of planar defects. A detailed study of the defect mode position and its dependance on defect thickness and on the surrounding photonic crystal is presented as well as evidence showing the scalability of the problem. Finally, it is also concluded that the proposed method is cheap and versatile allowing the preparation of opal-based complex structures.

  4. Prediction of two-dimensional electron gas mediated magnetoelectric coupling at ferroelectric PbTiO3/SrTiO3 heterostructures

    Science.gov (United States)

    Wei, Lan-ying; Lian, Chao; Meng, Sheng

    2017-05-01

    First-principles calculations predict the emergence of magnetoelectric coupling mediated by two-dimensional electron gas (2DEG) at the ferroelectric PbTiO3/SrTiO3 heterostructure. Free electrons endowed by naturally existing oxygen vacancies in SrTiO3 are driven to the heterostructure interface under the polarizing field of ferroelectric PbTiO3 to form a 2DEG. The electrons are captured by interfacial Ti atoms, which surprisingly exhibits ferromagnetism even at room temperature with a small critical density of ˜15.5 μ C /cm2 . The ferroelectricity-controlled ferromagnetism mediated by interfacial 2DEG shows strong magnetoelectric coupling strength, enabling convenient control of magnetism by electric field and vice versa. The PbTiO3/SrTiO3 heterostructure is cheap, easily grown, and controllable, promising future applications in low-cost spintronics and information storage at ambient condition.

  5. Fabrication of colloidal crystal heterostructures by a room temperature floating self-assembly method

    International Nuclear Information System (INIS)

    Wang Aijun; Chen Shengli; Dong Peng

    2011-01-01

    Highlights: → Opal colloidal crystal heterostructure of several square centimeters in area was fabricated within only tens of minutes. → A fabricated colloidal crystal heterostructure was composed of a PS opal and a TiO 2 inverse opal crystal films. → The photonic heterostructure had two photonic-band gaps. → The relative position of the two photonic-band gaps can be controlled by the size of PS microspheres used to fabricate the photonic heterostructure. - Abstract: Photonic crystal heterostructures were fabricated through a room temperature floating self-assembly (RTFSA) method recently developed by our research group. Applying this method, opal colloidal crystal heterostructures of several square centimeters in area were fabricated within tens of minutes without special facilities, and a heterostructure composed of a PS opal and a TiO 2 inverse opal crystal films was fabricated. SEM image of the PS opal-TiO 2 inverse opal heterostructure showed the ordered growth of the top opal film of the heterostructure was hardly disturbed by the cracks in the TiO 2 inverse opal film. The UV-vis transmission spectra indicated that the photonic heterostructures had two photonic-band gaps, and the relative position of two photonic-band gaps can be controlled by the size of PS microspheres used to fabricated the photonic heterostructures.

  6. Influence of the electric polarization on carrier transport and recombinaton dynamics in ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Matthias

    2010-08-16

    The present thesis deals with the influence of the electric polarization on properties of free carriers in ZnO-based semiconductor heterostructures. Thereby especially transport properties of free carriers as well as their recombination dynamics are studied. The thesis treats four main topics. The first main topic lies on the phsical properties of the applied materials, here the connection of the band gap and the lattice constant of thin Mg{sub x}Zn{sub 1-x}O films and their magnesium content is described. Furthermore the morphology of such films is discussed. Different substrates and deposition conditions are thereby detailedly considered. The second main topic treats the properties of undoped and phosphorus doped thin ZnO and Mg{sub x}Zn{sub 1-x}O films. The structural, transport, and luminescence properties are here compared and conclusions drawn on the growth conditions. In the third main topic quantum effects on ZnO/Mg{sub x}Zn{sub 1-x}O interfaces are treated. Hereby especially the influence of the electric polarization is considered. The presence of a two-dimensional electron gas is proved, and the necessary conditions for the generation of the so-called confined Stark effect are explained. Especially the growth-relevant parameters are considered. The fourth main topic represent coupling phenomena in ZnO/BaTiO{sub 3} heterostructures. Thereby first the experimentally observed properties of different heterostructures are shown, which were grown on different substrates. Here structural and transport properties hold the spotlight. A model for the description of the formation of space-charge zones in such heterostructures is introduced and applied for the description of the experimental results. The usefulness of the ferroelectric properties of the material BaTiO{sub 3} in combination with semiconducting ZnO were studied. For this ferroelectric field effect transistors were fabricated under application of both materials. The principle suitedness of the

  7. Two-dimensional electron gas in AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Li, J.Z.; Lin, J.Y.; Jiang, H.X.; Khan, M.A.; Chen, Q.

    1997-01-01

    The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. copyright 1997 American Vacuum Society

  8. Charge and field coupling phenomena at metal-oxide interfaces and their applications

    Science.gov (United States)

    Voora, Venkata M.

    Heterostructures composed of polar materials, such as ferroelectric and/or piezoelectric, are interesting due to their interface lattice charge coupling (LCC) effects. In this thesis, coupling effects between switchable ferroelectric and non-switchable piezoelectric semiconductor spontaneous polarizations are addressed. Also discussed is a dielectric continuum model approach for studying LCC effects in double layer piezoelectric semiconductor-ferroelectric and triple layer piezoelectric semiconductor-ferroelectric-piezoelectric semiconductor heterostructures. The dielectric continuum model augments the effects of electric field driven switchable polarization due to LCC with depletion layer formation in semiconductor heterostructures. Electrical investigations were used to study a reference single layer (BaTiO3), a double layer (BaTiO3-ZnO), and a triple layer (ZnO-BaTiO 3-ZnO) heterostructure grown by pulsed laser deposition. The coupling between the non-switchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of BaTiO3 causes strong asymmetric polarization hysteresis behavior. The n-type ZnO layer within double and triple layered heterostructures reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BaTiO 3 interfaces. Model analysis show very good agreement between the generated data and the experimental results. The dielectric continuum model approach allows for the derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents, and can be generalized towards multiple layer piezoelectric semiconductor-ferroelectric heterostructures. Based on experimental results the polarization coupled ZnO-BaTiO 3-ZnO heterostructures is identified as a two-terminal unipolar ferroelectric bi-junction transistor which can be utilized in memory storage devices. Furthermore it is discussed, that the triple layer heterostructure with magnetically

  9. Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

    Science.gov (United States)

    Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

    2012-03-01

    We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

  10. Wave mechanics applied to semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bastard, G.

    1990-01-01

    This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

  11. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  12. Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Martin

    2010-08-25

    In this work the properties of GaAs nanowire based heterostructures are investigated. The nanowires and their heterostructures are synthesized with Molecular Beam Epitaxy. The optical and structural properties are characterized by means of low temperature confocal micro-photoluminescence spectroscopy and Transmission Electron Microscopy. Molecular Beam Epitaxy is a versatile technique that allows to switch from radial to axial growth in order to cap the nanowires by an epitaxial prismatic AlGaAs/GaAs heterostructure. This can passivate surface states and improve the optical properties. The effect of such a passivation layer is studied by quantitative comparison of the diameter dependence of photoluminescence in passivated and unpassivated nanowires. The passivation is an important prerequisite for more complex axial heterostructures. Evidence for radial confinement effects is found in passivated nanowires with core diameters smaller than 70 nm. Furthermore, the polarization dependence of light absorption and emission is investigated. Two different types of axial heterostructures are studied that have the potential to further enhance the functionality of such nanowires. In a first step, the possibility of growth of axial InGaAs heterostructure in the Au-free Molecular Beam Epitaxy growth regime is investigated. Suitable growth conditions are identified and the growth temperature window for both GaAs and InGaAs nanowires is determined. At the optimum growth temperature for GaAs nanowires, the incorporation of indium in the structure is limited to a few percent. It is shown that by lowering the growth temperature the indium concentration in the structure can be increased up to 20%. The optical properties of the synthesized axial heterostructures are investigated by means of micro-photoluminescence spectroscopy and Transmission Electron Microscopy. The second type of axial nanowire heterostructure investigated in the present work is characterized by a change in crystal

  13. Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGe y/strained-Si heterostructure grown on a relaxed Si1-xGe x buffer

    International Nuclear Information System (INIS)

    Gupta, Saurabh; Lee, Minjoo L.; Isaacson, David M.; Fitzgerald, Eugene A.

    2005-01-01

    A dual channel heterostructure consisting of strained-Si/strained-Si 1-y Ge y on relaxed Si 1-x Ge x (y > x), provides a platform for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) with high hole mobilities (μ eff ) which depend directly on Ge concentration and strain in the strained-Si 1-y Ge y layer. Ge out-diffuses from the strained-Si 1-y Ge y layer into relaxed Si 1-x Ge x during high temperature processing, reducing peak Ge concentration and strain in the strained-Si 1-y Ge y layer and degrades hole μ eff in these dual channel heterostructures. A heterostructure consisting of strained-Si/strained-Si 1-y Ge y /strained-Si, referred to as a trilayer heterostructure, grown on relaxed Si 1-x Ge x has much reduced Ge out-flux from the strained-Si 1-y Ge y layer and retains higher μ eff after thermal processing. Improved hole μ eff over similar dual channel heterostructures is also observed in this heterostructure. This could be a result of preventing the hole wavefunction tunneling into the low μ eff relaxed Si 1-x Ge x layer due to the additional valence band offset provided by the underlying strained-Si layer. A diffusion coefficient has been formulated and implemented in a finite difference scheme for predicting the thermal budget of the strained SiGe heterostructures. It shows that the trilayer heterostructures have superior thermal budgets at higher Ge concentrations. Ring-shaped MOSFETs were fabricated on both platforms and subjected to various processing temperatures in order to compare the extent of μ eff reduction with thermal budget. Hole μ eff enhancements are retained to a much higher extent in a trilayer heterostructure after high temperature processing as compared to a dual channel heterostructure. The improved thermal stability and hole μ eff of a trilayer heterostructure makes it an ideal platform for fabricating high μ eff MOSFETs that can be processed over higher temperatures without significant losses in hole

  14. Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures

    Directory of Open Access Journals (Sweden)

    Luis Zamora-Peredo

    2016-01-01

    Full Text Available Photoreflectance (PR and Raman are two very useful spectroscopy techniques that usually are used to know the surface electronic states in GaAs-based semiconductor devices. However, although they are exceptional tools there are few reports where both techniques were used in these kinds of devices. In this work, the surface electronic states on AlGaAs/GaAs heterostructures were studied in order to identify the effect of factors like laser penetration depth, cap layer thickness, and surface passivation over PR and Raman spectra. PR measurements were performed alternately with two lasers (532 nm and 375 nm wavelength as the modulation sources in order to identify internal and surface features. The surface electric field calculated by PR analysis decreased whereas the GaAs cap layer thickness increased, in good agreement with a similar behavior observed in Raman measurements (IL-/ILO ratio. When the heterostructures were treated by Si-flux, these techniques showed contrary behaviors. PR analysis revealed a diminution in the surface electric field due to a passivation process whereas the IL-/ILO ratio did not present the same behavior because it was dominated by the depletion layers width (cap layer thickness and the laser penetration depth.

  15. Ag/CdS heterostructural composites: Fabrication, characterizations and photocatalysis

    International Nuclear Information System (INIS)

    Liu, Yang; Chi, Mei; Dong, Hailiang; Jia, Husheng; Xu, Bingshe; Zhang, Zhuxia

    2014-01-01

    Highlights: • Novel Ag/CdS core–shell heterostructural composites were fabricated using a two-step chemical method. • A formation mechanism of Ag/CdS heterostructural composites. • The photocatalytic activity of Ag/CdS heterostructural composites was found to be improved. • PL emissions are markedly quenched in the Ag/CdS composites than in CdS nanoparticles. - Abstract: Ag/CdS heterostructural materials were successfully synthesized by ultrasound-assisted polyols and hydrothermal method. Under hydrothermal condition, thiourea adsorbed on Ag nanowires releases S 2− ions, which react with vicinal Cd 2+ ions to form CdS clusters on Ag nanowires. Thereafter, the Ag/CdS composites grow into core–shell structure through CdS aggregation, Ostwald ripening, and preferential growth. The obtained core–shell structures and morphologies were investigated by XRD, SEM, and TEM; the experimental results indicate that the composites are composed of Ag nanowires serving as the core and CdS particles as the shell. The photocatalytic property of Ag/CdS core–shell materials was then investigated in detail. Comparing studies on the degradation of methylene blue were employed by using pure CdS, pure Ag, and Ag/CdS composites, respectively. The results show that the Ag/CdS composites possess higher photocatalytic degradation efficiency. Moreover, the Ag/CdS composites show improved stability, and the photocatalytic activity remains almost unchanged after four recycles. The enhanced photocatalytic effect for Ag/CdS composites is mainly attributed to the photogenerated electron transfer from CdS to Ag nanowire, while photogenerated holes still remain in CdS's valence band. Consequently, the effective separation of photogenerated electrons and holes and the resulting OH radicals improve the photocatalytic efficiency of Ag/CdS composites greatly

  16. Controllable synthesis of metal selenide heterostructures mediated by Ag2Se nanocrystals acting as catalysts

    Science.gov (United States)

    Zhou, Jiangcong; Huang, Feng; Xu, Ju; Wang, Yuansheng

    2013-09-01

    Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se-ZnSe, and even multi-segment heterostructures such as Ag2Se-CdSe-ZnSe and Ag2Se-ZnSe-CdSe, were successfully synthesized. Several interesting features were found in the Ag2Se based heterogrowth. At the initial stage of heterogrowth, a layer of the second phase forms on the surface of an Ag2Se nanosphere, with a curved junction interface between the two phases. With further growth of the second phase, the Ag2Se nanosphere tends to flatten the junction surface by modifying its shape from sphere to hemisphere in order to minimize the conjunct area and thus the interfacial energy. Notably, the crystallographic relationship of the two phases in the heterostructure varies with the lattice parameters of the second phase, in order to reduce the lattice mismatch at the interface. Furthermore, a small lattice mismatch at the interface results in a straight rod-like second phase, while a large lattice mismatch would induce a tortuous product. The reported results may provide a new route for developing novel selenide semiconductor heterostructures which are potentially applicable in optoelectronic, biomedical, photovoltaic and catalytic fields.Ag2Se nanocrystals were demonstrated to be novel semiconductor mediators, or in other word catalysts, for the growth of semiconductor heterostructures in solution. This is a result of the unique feature of Ag2Se as a fast ion conductor, allowing foreign cations to dissolve and then to heterogrow the second phase. Using Ag2Se nanocrystals as catalysts, dimeric metal selenide heterostructures such as Ag2Se-CdSe and Ag2Se

  17. Voltage-controlled ferromagnetism and magnetoresistance in LaCoO{sub 3}/SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Chengqing; Park, Keun Woo; Yu, Edward T. [Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 1 University Station C1600, Austin, Texas 78712 (United States); Jordan-Sweet, Jean L. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2013-11-14

    A LaCoO{sub 3}/SrTiO{sub 3} heterostructure grown on Si (001) is shown to provide electrically switchable ferromagnetism, a large, electrically tunable magnetoresistance, and a vehicle for achieving and probing electrical control over ferromagnetic behavior at submicron dimensions. Fabrication of devices in a field-effect transistor geometry enables application of a gate bias voltage that modulates strain in the heterostructure via the converse piezoelectric effect in SrTiO{sub 3}, leading to an artificial inverse magnetoelectric effect arising from the dependence of ferromagnetism in the LaCoO{sub 3} layer on strain. Below the Curie temperature of the LaCoO{sub 3} layer, this effect leads to modulation of resistance in LaCoO{sub 3} as large as 100%, and magnetoresistance as high as 80%, both of which arise from carrier scattering at ferromagnetic-nonmagnetic interfaces in LaCoO{sub 3}. Finite-element numerical modeling of electric field distributions is used to explain the dependence of carrier transport behavior on gate contact geometry, and a Valet-Fert transport model enables determination of spin polarization in the LaCoO{sub 3} layer. Piezoresponse force microscopy is used to confirm the existence of piezoelectric response in SrTiO{sub 3} grown on Si (001). It is also shown that this structure offers the possibility of achieving exclusive-NOR logic functionality within a single device.

  18. Green Color Purification in Tb(3+) Ions through Silica Inverse Opal Heterostructure.

    Science.gov (United States)

    Shrivastava, Vishnu Prasad; Sivakumar, Sri; Kumar, Jitendra

    2015-06-10

    The ordered SiO2:Tb(3+) inverse opal heterostructure films are fabricated through polystyrene spheres hetero-opal template using the convective self-assembly method to examine their potential for color purification. Their optical properties and photoluminescence have been investigated and compared with individual single inverse opals and reference (SiO2:Tb(3+) powder). The heterostructures are shown to possess two broad photonic stop bands separated by an effective pass band, causing suppression of blue, orange, and red emission bands corresponding to (5)D4 → (7)F(j); j = 6, 4, 3 transitions, respectively and an enhancement of green emission (i.e., (5)D4 → (7)F5). Although the suppression of various emission occurs because of its overlap with the photonic band gaps (PSBs), the enhancement of green radiation is observed because of its location matching with the pass band region. The Commission International de l'Eclairage (CIE) chromaticity coordinates of the emission spectrum of the heterostructure based on polystyrene sphere of 390 and 500 nm diameter are x = 0.2936, y = 0.6512 and lie closest to those of standard green color (wavelength 545 nm). In addition, a significant increase observed in luminescence lifetime for (5)D4 level of terbium in inverse opal heterostructures vis-à-vis reference (SiO2:Tb(3+) powder) is attributed to the change in the effective refractive index.

  19. Heterostructures of transition metal dichalcogenides

    KAUST Repository

    Amin, Bin

    2015-08-24

    The structural, electronic, optical, and photocatalytic properties of out-of-plane and in-plane heterostructures of transition metal dichalcogenides are investigated by (hybrid) first principles calculations. The out-of-plane heterostructures are found to be indirect band gap semiconductors with type-II band alignment. Direct band gaps can be achieved by moderate tensile strain in specific cases. The excitonic peaks show blueshifts as compared to the parent monolayer systems, whereas redshifts occur when the chalcogen atoms are exchanged along the series S-Se-Te. Strong absorption from infrared to visible light as well as excellent photocatalytic properties can be achieved.

  20. Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

    Science.gov (United States)

    Hu, J.-M.; Shu, L.; Li, Z.; Gao, Y.; Shen, Y.; Lin, Y. H.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology. PMID:24421375

  1. Van der Waals heterostructure of phosphorene and graphene: tuning the Schottky barrier and doping by electrostatic gating.

    Science.gov (United States)

    Padilha, J E; Fazzio, A; da Silva, Antônio J R

    2015-02-13

    In this Letter, we study the structural and electronic properties of single-layer and bilayer phosphorene with graphene. We show that both the properties of graphene and phosphorene are preserved in the composed heterostructure. We also show that via the application of a perpendicular electric field, it is possible to tune the position of the band structure of phosphorene with respect to that of graphene. This leads to control of the Schottky barrier height and doping of phosphorene, which are important features in the design of new devices based on van der Waals heterostructures.

  2. Nanoscale heterostructures with molecular-scale single-crystal metal wires.

    Science.gov (United States)

    Kundu, Paromita; Halder, Aditi; Viswanath, B; Kundu, Dipan; Ramanath, Ganpati; Ravishankar, N

    2010-01-13

    Creating nanoscale heterostructures with molecular-scale (synthesis of nanoscale heterostructures with single-crystal molecular-scale Au nanowires attached to different nanostructure substrates. Our method involves the formation of Au nanoparticle seeds by the reduction of rocksalt AuCl nanocubes heterogeneously nucleated on the substrates and subsequent nanowire growth by oriented attachment of Au nanoparticles from the solution phase. Nanoscale heterostructures fabricated by such site-specific nucleation and growth are attractive for many applications including nanoelectronic device wiring, catalysis, and sensing.

  3. Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

    Science.gov (United States)

    Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I.; Monroy, Eva

    2018-06-01

    Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current–voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

  4. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  5. High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

    Science.gov (United States)

    Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Wang, Laiyuan; Wu, Dequn

    2017-01-01

    Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory. PMID:28852619

  6. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  7. 3D Auger quantitative depth profiling of individual nanoscaled III–V heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Hourani, W. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Gorbenko, V. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Univ. Grenoble Alpes, LTM, CNRS, F-38000 Grenoble (France); Barnes, J.-P.; Guedj, C. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Cipro, R.; Moeyaert, J.; David, S.; Bassani, F.; Baron, T. [Univ. Grenoble Alpes, LTM, CNRS, F-38000 Grenoble (France); Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France)

    2016-11-15

    Highlights: • The nanoscale chemical characterization of III–V heterostructures is performed using Auger depth profiling below decananometric spatial resolution. • Reliable indium quantification is achieved on planar structures for thicknesses down to 9 nm. • Quantitative 3D compositional depth profiles are obtained on patterned structures, with sufficient lateral resolution to analyze one single trench. • The Auger intrinsic spatial resolution is estimated around 150–200 nm using a comparison with HAADF-STEM. • Auger and SIMS provide reliable in-depth chemical analysis of such complex 3D heterostructures, in particular regarding indium quantification. - Abstract: The nanoscale chemical characterization of III–V heterostructures is performed using Auger depth profiling below decananometric spatial resolution. This technique is successfully applied to quantify the elemental composition of planar and patterned III–V heterostructures containing InGaAs quantum wells. Reliable indium quantification is achieved on planar structures for thicknesses down to 9 nm. Quantitative 3D compositional depth profiles are obtained on patterned structures, for trench widths down to 200 nm. The elemental distributions obtained in averaged and pointed mode are compared. For this last case, we show that Zalar rotation during sputtering is crucial for a reliable indium quantification. Results are confirmed by comparisons with secondary ion mass spectrometry, photoluminescence spectroscopy, transmission electron microscopy and electron dispersive X-ray spectroscopy. The Auger intrinsic spatial resolution is quantitatively measured using an original methodology based on the comparison with high angle annular dark field scanning transmission electron microscopy measurements at the nanometric scale.

  8. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    Science.gov (United States)

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  9. Two-dimensional heterostructures for energy storage

    Energy Technology Data Exchange (ETDEWEB)

    Gogotsi, Yury G. [Drexel Univ., Philadelphia, PA (United States); Pomerantseva, Ekaterina [Drexel Univ., Philadelphia, PA (United States)

    2017-06-12

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. As a result, we also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

  10. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Science.gov (United States)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  11. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    International Nuclear Information System (INIS)

    Vasil’evskii, I. S.; Galiev, G. B.; Klimov, E. A.; Požela, K.; Požela, J.; Jucienė, V.; Sužiedėlis, A.; Žurauskienė, N.; Keršulis, S.; Stankevič, V.

    2011-01-01

    An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is obtained experimentally via controlling the composition of semiconductors forming the interface. The electron mobility at the interface in the In 0.8 Ga 0.2 As/In 0.7 Al 0.3 As metamorphic structure with a high molar fraction of In (0.7–0.8) is as high as 12.3 × 10 3 cm 2 V −1 s −1 at room temperature. An increase in the electron mobility by a factor of 1.1–1.4 is attained upon the introduction of thin (1–3 nm) InAs layers into a quantum well of selectively doped In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterostructures. A maximal drift velocity attains 2.5 × 10 7 cm/s in electric fields of 2–5 kV/cm. The threshold field F th for the intervalley Γ-L electron transfer (the Gunn effect) in the InGaAs quantum well is higher than in the bulk material by a factor of 2.5–3. The effect of two- to threefold decrease in the threshold field F th in the InGaAs quantum well is established upon increasing the molar fraction of In in the InAlAs barrier, as well as upon the introduction of thin InAs inserts into the InGaAs quantum well.

  12. Interfacial Interactions in Monolayer and Few-Layer SnS/CH3 NH3 PbI3 Perovskite van der Waals Heterostructures and Their Effects on Electronic and Optical Properties.

    Science.gov (United States)

    Li, Jian-Cai; Wei, Zeng-Xi; Huang, Wei-Qing; Ma, Li-Li; Hu, Wangyu; Peng, Ping; Huang, Gui-Fang

    2018-02-05

    A high light-absorption coefficient and long-range hot-carrier transport of hybrid organic-inorganic perovskites give huge potential to their composites in solar energy conversion and environmental protection. Understanding interfacial interactions and their effects are paramount for designing perovskite-based heterostructures with desirable properties. Herein, we systematically investigated the interfacial interactions in monolayer and few-layer SnS/CH 3 NH 3 PbI 3 heterostructures and their effects on the electronic and optical properties of these structures by density functional theory. It was found that the interfacial interactions in SnS/CH 3 NH 3 PbI 3 heterostructures were van der Waals (vdW) interactions, and they were found to be insensitive to the layer number of 2D SnS sheets. Interestingly, although their band gap decreased upon increasing the layer number of SnS, the near-gap electronic states and optical absorption spectra of these heterostructures were found to be strikingly similar. This feature was determined to be critical for the design of 2D layered SnS-based heterostructures. Strong absorption in the ultraviolet and visible-light regions, type II staggered band alignment at the interface, and few-layer SnS as an active co-catalyst make 2D SnS/CH 3 NH 3 PbI 3 heterostructures promising candidates for photocatalysis, photodetectors, and solar energy harvesting and conversion. These results provide first insight into the nature of interfacial interactions and are useful for designing hybrid organic-inorganic perovskite-based devices with novel properties. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. DX centers in indium aluminum arsenide heterostructures

    Science.gov (United States)

    Sari, Huseyin

    DX centers are point defects observed in many n-type doped III-V compound semi conductors. They have unique properties, which include large differences between their optical and thermal ionization energies, and a temperature dependence of the capture cross-sections. As a result of these properties DX centers exhibit a reduction in free carrier concentration and a large persistent photoconductivity (PPC) effect. DX centers also lead to a shift in the threshold voltage of modulation doped field effect transistors (MODFET) structures, at low temperatures. Most of the studies on this defect have been carried out on the Ga xAl1-xAs material system. However, to date there is significantly less work on DX centers in InxAl1-xAs compounds. This is partly due to difficulties associated with the growth of defect free materials other than lattice matched In0.52Al 0.48As on InP and partly because the energy level of the DX center is in resonance with the conduction band in In0.52Al0.48As. The purpose of this dissertation is to extend the DX center investigation to InAlAs compounds, primarily in the indirect portion of the InAlAs bandgap. In this work the indium composition dependence of the DX centers in In xAl1-xAs/InyGa1-yAs-based heterostructure is studied experimentally. Different InxAl 1-xAs epitaxial layers with x = 0.10, x = 0.15, x = 0.20, and x = 0.34 in a MODFET-like heterostructure were grown by Molecular Beam Epitaxy (MBE) on (001) GaAs substrates. In order to compensate the lattice mismatch between epitaxial layers and their substrates, step-graded buffer layers with indium composition increments of x = 0.10, every 2000 A, were used. For the samples grown with different indium contents Hall measurements as a function of both temperature and different cooling biases were performed in order to determine their carrier concentrations. A self consistent Poisson-Schrodinger numerical software is used to model the heterostructures. With the help of this numerical model

  14. Odd-frequency pairing in superconducting heterostructures .

    Science.gov (United States)

    Golubov, A. A.; Tanaka, Y.; Yokoyama, T.; Asano, Y.

    2007-03-01

    We present a general theory of the proximity effect in junctions between unconventional superconductors and diffusive normal metals (DN) or ferromagnets (DF). We consider all possible symmetry classes in a superconductor allowed by the Pauli principle: even-frequency spin-singlet even-parity state, even-frequency spin-triplet odd-parity state, odd-frequency spin-triplet even-parity state and odd-frequency spin-singlet odd-parity state. For each of the above states, symmetry and spectral properties of the induced pair amplitude in the DN (DF) are determined. The cases of junctions with spin-singlet s- and d-wave superconductors and spin-triplet p-wave superconductors are adressed in detail. We discuss the interplay between the proximity effect and midgap Andreev bound states arising at interfaces in unconventional (d- or p-wave) junctions. The most striking property is the odd-frequency symmetry of the pairing amplitude induced in DN (DF) in contacts with p-wave superconductors. This leads to zero-energy singularity in the density of states and to anomalous screening of an external magnetic field. Peculiarities of Josephson effect in d- or p-wave junctions are discussed. Experiments are suggested to detect an order parameter symmetry using heterostructures with unconventional superconductors.

  15. Symmetry mismatch-driven perpendicular magnetic anisotropy for perovskite/brownmillerite heterostructures.

    Science.gov (United States)

    Zhang, Jing; Zhong, Zhicheng; Guan, Xiangxiang; Shen, Xi; Zhang, Jine; Han, Furong; Zhang, Hui; Zhang, Hongrui; Yan, Xi; Zhang, Qinghua; Gu, Lin; Hu, Fengxia; Yu, Richeng; Shen, Baogen; Sun, Jirong

    2018-05-15

    Grouping different transition metal oxides together by interface engineering is an important route toward emergent phenomenon. While most of the previous works focused on the interface effects in perovskite/perovskite heterostructures, here we reported on a symmetry mismatch-driven spin reorientation toward perpendicular magnetic anisotropy in perovskite/brownmillerite heterostructures, which is scarcely seen in tensile perovskite/perovskite heterostructures. We show that alternately stacking perovskite La 2/3 Sr 1/3 MnO 3 and brownmillerite LaCoO 2.5 causes a strong interface reconstruction due to symmetry discontinuity at interface: neighboring MnO 6 octahedra and CoO 4 tetrahedra at the perovskite/brownmillerite interface cooperatively relax in a manner that is unavailable for perovskite/perovskite interface, leading to distinct orbital reconstructions and thus the perpendicular magnetic anisotropy. Moreover, the perpendicular magnetic anisotropy is robust, with an anisotropy constant two orders of magnitude greater than the in-plane anisotropy of the perovskite/perovskite interface. The present work demonstrates the great potential of symmetry engineering in designing artificial materials on demand.

  16. Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

    DEFF Research Database (Denmark)

    Pryds, Nini

    2015-01-01

    The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first...... unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our...

  17. Spin excitation and band-narrowing in AlxGa1-xAs heterostructures

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2010-01-01

    We studied the spin excitation in dependences of the applied electric field and lattice temperature (LT) via the measurements of the circularly polarized photoluminescence (CPPL) in Al x Ga 1-x As heterostructures (HSs). The intensity of CPPL was found to strongly depend on the electric field applied to the HSs. The CPPL was also found to enhance with decreasing LT. It was demonstrated that the observed LT dependence might be due to the LT-dependent band-gap shift of the HS materials.

  18. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

    Science.gov (United States)

    Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

    2014-08-07

    Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect

  19. Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

    Science.gov (United States)

    Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

    2018-01-01

    2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

  20. The electric field manipulation of magnetization in La{sub 1−x}Sr{sub x}CoO{sub 3}/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Q. M.; Li, Q.; Zhou, W. P.; Wang, L. Y.; Yang, Y. T.; Wang, D. H., E-mail: wangdh@nju.edu.cn; Lv, L. Y.; Du, Y. W. [Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Gao, R. L. [School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331 (China)

    2014-04-07

    La{sub 1−x}Sr{sub x}CoO{sub 3} (x = 0.18, 0.33, and 0.5) films were grown epitaxially on piezoelectric Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} substrates by pulsed laser deposition. The magnetization of these films varies with the external electric field, showing the magnetoelectric effect. With different doping content of Sr{sup 2+} ions, the change of magnetization for these films show different behaviors with increasing temperature, which can be attributed to the competition between electric-field-induced changes of spin state and double exchange interaction. This work presents an alternative mechanism to investigate the electric field control of magnetism in magnetoelectric heterostructure by tuning the spin state.

  1. Unidirectional Wave Propagation in Low-Symmetric Colloidal Photonic-Crystal Heterostructures

    OpenAIRE

    Yannopapas, Vassilios

    2015-01-01

    We show theoretically that photonic crystals consisting of colloidal spheres exhibit unidirectional wave propagation and one-way frequency band gaps without breaking time-reversal symmetry via, e.g., the application of an external magnetic field or the use of nonlinear materials. Namely, photonic crystals with low symmetry such as the monoclinic crystal type considered here as well as with unit cells formed by the heterostructure of different photonic crystals show significant unidirectional ...

  2. Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

    Energy Technology Data Exchange (ETDEWEB)

    Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S G; Lazarev, V V; Yablonskii, S V; Palto, S P [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

  3. Novel room-temperature spin-valve-like magnetoresistance in magnetically coupled nano-column Fe3O4/Ni heterostructure.

    Science.gov (United States)

    Xiao, Wen; Song, Wendong; Herng, Tun Seng; Qin, Qing; Yang, Yong; Zheng, Ming; Hong, Xiaoliang; Feng, Yuan Ping; Ding, Jun

    2016-08-25

    Herein, we design a room-temperature spin-valve-like magnetoresistance in a nano-column Fe3O4/Ni heterostructure without using a non-magnetic spacer or pinning layer. An Fe3O4 nano-column film is self-assembled on a Ni underlayer by the thermal decomposition method. The wet-chemical self-assembly is facile, economical and scalable. The magnetoresistance (MR) response of the Ni underlayer in the heterostructure under positive and negative out-of-plane magnetic fields differ by ∼0.25 at room temperature and ∼0.43 at 100 K. We attribute the spin-valve-like magnetoresistance to the unidirectional magnetic anisotropy of the Ni underlayer when being magnetically coupled by the Fe3O4 nano-column film. The out-of-plane negative-field magnetization is higher than the positive-field magnetization, affirming the unidirectional magnetic anisotropy of the Fe3O4/Ni heterostructure. Temperature-dependent magnetic and resistivity studies illustrate a close correlation between the magnetization transition of Fe3O4 and resistivity transition of Ni and prove a magnetic coupling between the Fe3O4 and Ni. First-principles calculations reveal that the Fe3O4/Ni model under a negative magnetic field is energetically more stable than that under a positive magnetic field. Furthermore, partial density of states (PDOS) analysis demonstrates the unidirectional magnetic anisotropy of the Ni 3d orbital. This is induced by the strong ferromagnetic coupling between Fe3O4 and Ni via oxygen-mediated Fe 3d-O 2p-Ni 3d hybridizations.

  4. Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance

    Science.gov (United States)

    Zhang, Yachao; Wang, Zhizhe; Xu, Shengrui; Chen, Dazheng; Bao, Weimin; Zhang, Jinfeng; Zhang, Jincheng; Hao, Yue

    2017-11-01

    High quality InAlN/InGaN/InAlN/InGaN double channel heterostructures were proposed and grown by metal organic chemical vapor deposition. Benefiting from the adoption of the pulsed growth method and Two-Step AlN interlayer, the material quality and interface characteristics of the double channel heterostructures are satisfactory. The results of the temperature-dependent Hall effect measurement indicated that the transport properties of the double channel heterostructures were superior to those of the traditional single channel heterostructures in the whole test temperature range. Meanwhile, the sheet resistance of the double channel heterostructures reached 218.5 Ω/□ at 300 K, which is the record of InGaN-based heterostructures. The good transport properties of the InGaN double channel heterostructures are beneficial to improve the performance of the microwave power devices based on nitride semiconductors.

  5. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    Science.gov (United States)

    Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

    1993-01-01

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

  6. Noble-metal-free NiO@Ni-ZnO/reduced graphene oxide/CdS heterostructure for efficient photocatalytic hydrogen generation

    Science.gov (United States)

    Chen, Fayun; Zhang, Laijun; Wang, Xuewen; Zhang, Rongbin

    2017-11-01

    Noble-metal-free semiconductor materials are widely used for photocatalytic hydrogen generation because of their low cost. ZnO-based heterostructures with synergistic effects exhibit an effective photocatalytic activity. In this work, NiO@Ni-ZnO/reduced graphene oxide (rGO)/CdS heterostructures are synthesized by a multi-step method. rGO nanosheets and CdS nanoparticles were introduced into the heterostructures via a redox reaction and light-assisted growth, respectively. A novel Ni-induced electrochemical growth method was developed to prepare ZnO rods from Zn powder. NiO@Ni-ZnO/rGO/CdS heterostructures with a wide visible-light absorption range exhibited highly photocatalytic hydrogen generation rates under UV-vis and visible light irradiation. The enhanced photocatalytic activity is attributed to the Ni nanoparticles that act as cocatalysts for capturing photoexcited electrons and the improved synergistic effect between ZnO and CdS due to the rGO nanosheets acting as photoexcited carrier transport channels.

  7. High field-effect mobility at the (Sr,Ba)SnO{sub 3}/BaSnO{sub 3} interface

    Energy Technology Data Exchange (ETDEWEB)

    Fujiwara, Kohei, E-mail: kfujiwara@imr.tohoku.ac.jp; Nishihara, Kazuki; Shiogai, Junichi; Tsukazaki, Atsushi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

    2016-08-15

    A perovskite oxide, BaSnO{sub 3}, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO{sub 3}-based heterostructures with atomically smooth surfaces, fabricated on SrTiO{sub 3} substrates by the (Sr,Ba)SnO{sub 3} buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,Ba)SnO{sub 3} as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO{sub 3}-based field-effect transistors.

  8. Reversible electrical-field control of magnetization and anomalous Hall effect in Co/PMN-PT hybrid heterostructures

    Science.gov (United States)

    Wang, J.; Huang, Q. K.; Lu, S. Y.; Tian, Y. F.; Chen, Y. X.; Bai, L. H.; Dai, Y.; Yan, S. S.

    2018-04-01

    Room-temperature reversible electrical-field control of the magnetization and the anomalous Hall effect was reported in hybrid multiferroic heterojunctions based on Co/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT). We demonstrate herein that electrical-field-induced strain and oxygen-ion migration in ZnO/Co/PMN-PT junctions exert opposing effects on the magnetic properties of the Co sublayer, and the competition between these effects determines the final magnitude of magnetization. This proof-of-concept investigation opens an alternative way to optimize and enhance the electrical-field effect on magnetism through the combination of multiple electrical manipulation mechanisms in hybrid multiferroic devices.

  9. The effects of Dresselhaus and Rashba spin-orbit interactions on the electron tunneling in a non-magnetic heterostructure

    International Nuclear Information System (INIS)

    Lu Jianduo; Li Jianwen

    2010-01-01

    We theoretically investigate the electron transport properties in a non-magnetic heterostructure with both Dresselhaus and Rashba spin-orbit interactions. The detailed-numerical results show that (1) the large spin polarization can be achieved due to Dresselhaus and Rashba spin-orbit couplings induced splitting of the resonant level, although the magnetic field is zero in such a structure, (2) the Rashba spin-orbit coupling plays a greater role on the spin polarization than the Dresselhaus spin-orbit interaction does, and (3) the transmission probability and the spin polarization both periodically change with the increase of the well width.

  10. Photoelectric properties of ZnO/Ag2S heterostructure and its photoelectric ethanol sensing characteristics

    International Nuclear Information System (INIS)

    Zhang Yu; Liu Bingkun; Wang Dejun; Lin Yanhong; Xie Tengfeng; Zhai Jiali

    2012-01-01

    Highlights: ► The ZnO/Ag 2 S heterostructure shows good photoelectric properties under visible-light irradiation. ► Transient photovoltage results reveal the separation process of photo-generated charges and give further evidence of interfacial effects. ► Photoelectric ethanol sensing characteristics have been found for the ZnO/Ag 2 S heterostructure at room temperature. - Abstract: The photoelectric properties of ZnO microspheres, ZnO/Ag 2 S heterogeneous microspheres and Ag 2 S hollow microspheres were investigated systematically by surface photovoltage, transient photovoltage and surface photocurrent techniques. The ZnO/Ag 2 S heterostructure shows superior photoelectric properties in visible-light region compared with pure Ag 2 S. Transient photovoltage results reveal the separation processes of photo-generated charge carriers in the samples. The photoelectric ethanol sensing property induced by visible light for the ZnO/Ag 2 S heterostructure has been found, which should be valuable for the practical application of semiconductor gas sensors at room temperature.

  11. Two-dimensional hole systems in indium-based quantum well heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Loher, Josef

    2016-08-01

    The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of InAlAs/InGaAs/InAs:Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate. Within these magnetotransport experiments, a reproducible phenomenon of remarkable robustness emerged in the transverse Hall magnetoresistivity of the indium 2DHG systems which are grown on a special InAlAs step-graded metamorphic buffer layer structure to compensate crystal lattice mismatch. As a consequence of the strain relaxation process, these material systems are characterized by anisotropic properties along different crystallographic directions. We identify a puzzling offset phenomenon in the zero-field Hall magnetoresistance and demonstrate it to be a universal effect in systems with spatially anisotropic transport properties.

  12. Energy dissipation mechanism revealed by spatially resolved Raman thermometry of graphene/hexagonal boron nitride heterostructure devices

    Science.gov (United States)

    Kim, Daehee; Kim, Hanul; Yun, Wan Soo; Watanabe, Kenji; Taniguchi, Takashi; Rho, Heesuk; Bae, Myung-Ho

    2018-04-01

    Understanding the energy transport by charge carriers and phonons in two-dimensional (2D) van der Waals heterostructures is essential for the development of future energy-efficient 2D nanoelectronics. Here, we performed in situ spatially resolved Raman thermometry on an electrically biased graphene channel and its hBN substrate to study the energy dissipation mechanism in graphene/hBN heterostructures. By comparing the temperature profile along the biased graphene channel with that along the hBN substrate, we found that the thermal boundary resistance between the graphene and hBN was in the range of (1-2) ~ × 10-7 m2 K W-1 from ~100 °C to the onset of graphene break-down at ~600 °C in air. Consideration of an electro-thermal transport model together with the Raman thermometry conducted in air showed that a doping effect occurred under a strong electric field played a crucial role in the energy dissipation of the graphene/hBN device up to T ~ 600 °C.

  13. Hydrodynamic pumping of a quantum Fermi liquid in a semiconductor heterostructure

    Science.gov (United States)

    Heremans, J. J.; Kantha, D.; Chen, H.; Govorov, A. O.

    2003-03-01

    We present experimental results for a pumping mechanism observed in mesoscopic structures patterned on two-dimensional electron systems in GaAs/AlGaAs heterostructures. The experiments are performed at low temperatures, in the ballistic regime. The effect is observed as a voltage or current signal corresponding to carrier extraction from sub-micron sized apertures, when these apertures are swept by a beam of ballistic electrons. The carrier extraction, phenomenologically reminiscent of the Bernoulli pumping effect in classical fluids, has been observed in various geometries. We ascertained linearity between measured voltage and injected current in all experiments, thereby excluding rectification effects. The linear response, however, points to a fundamental difference from the Bernoulli effect in classical liquids, where the response is nonlinear and quadratic in terms of the velocity. The temperature dependence of the effect will also be presented. We thank M. Shayegan (Princeton University) for the heterostructure growth, and acknowledge support from NSF DMR-0094055.

  14. Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

    KAUST Repository

    Tang, Hao-Ling

    2017-11-29

    Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.

  15. Development of an eight-band theory for quantum dot heterostructures

    NARCIS (Netherlands)

    Pokatilov, E.P.; Fonoberov, V.A.; Fomin, V.; Devreese, J.T.

    2001-01-01

    We derive a nonsymmetrized eight-band effective-mass Hamiltonian for quantum dot heterostructures (QDH's) in Burt's envelope-function representation. The 8*8 radial Hamiltonian and the boundary conditions for the Schrodinger equation are obtained for spherical QDH's. Boundary conditions for

  16. The dielectric genome of van der Waals heterostructures

    DEFF Research Database (Denmark)

    Andersen, Kirsten; Latini, Simone; Thygesen, Kristian Sommer

    2015-01-01

    , the hybridization of quantum plasmons in large graphene/hBN heterostructures, and to demonstrate the intricate effect of substrate screening on the non-Rydberg exciton series in supported WS2. The dielectric building blocks for a variety of 2D crystals are available in an open database together with the software...... for solving the coupled electrodynamic equations....

  17. Mesoscopic Field-Effect-Induced Devices in Depleted Two-Dimensional Electron Systems

    Science.gov (United States)

    Bachsoliani, N.; Platonov, S.; Wieck, A. D.; Ludwig, S.

    2017-12-01

    Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs /(Al ,Ga )As heterostructure enable a large variety of applications ranging from fundamental research to high-speed transistors. Electrical circuits are thereby commonly defined by creating barriers for carriers by the selective depletion of a preexisting 2DES. We explore an alternative approach: we deplete the 2DES globally by applying a negative voltage to a global top gate and screen the electric field of the top gate only locally using nanoscale gates placed on the wafer surface between the plane of the 2DES and the top gate. Free carriers are located beneath the screen gates, and their properties can be controlled by means of geometry and applied voltages. This method promises considerable advantages for the definition of complex circuits by the electric-field effect, as it allows us to reduce the number of gates and simplify gate geometries. Examples are carrier systems with ring topology or large arrays of quantum dots. We present a first exploration of this method pursuing field effect, Hall effect, and Aharonov-Bohm measurements to study electrostatic, dynamic, and coherent properties.

  18. Vertically aligned ZnO@CdS nanorod heterostructures for visible light photoinactivation of bacteria

    Energy Technology Data Exchange (ETDEWEB)

    Zirak, M. [Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran (Iran, Islamic Republic of); Akhavan, O., E-mail: oakhavan@sharif.edu [Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 14588-89694, Tehran (Iran, Islamic Republic of); Moradlou, O. [Department of Chemistry, Faculty of Sciences, Alzahra University, P.O. Box 1993893973, Tehran (Iran, Islamic Republic of); Nien, Y.T. [Department of Materials Science and Engineering, National Formosa University, Huwei District, Taiwan (China); Moshfegh, A.Z. [Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 14588-89694, Tehran (Iran, Islamic Republic of)

    2014-03-25

    Highlights: • Synthesis of vertically aligned ZnO@CdS nanorod heterostructures. • Effective antibacterial application of the ZnO@CdS nanorods under visible light irradiation. • Determination of the optimum loading of CdS on the ZnO nanorods in the antibacterial application. -- Abstract: Vertically aligned ZnO@CdS nanorod heterostructure films with various loadings of CdS nanoparticle shell were synthesized and applied in photoinactivation of Escherichia coli bacteria under visible light irradiation. While neither the bare ZnO nanorods (with band-gap energy (E{sub g}) of ∼3.28 eV) under visible light irradiation nor the nanorod heterostructures in dark exhibited any significant antibacterial activity, the ZnO@CdS nanorod heterostructures (with E{sub g} ∼2.5–2.6 eV) could successfully inactivate the bacteria under visible light irradiation. Furthermore, it was found that an optimum loading of the CdS shell (corresponding to the effective thickness less than ∼15 nm) is required to achieve a complete inactivation of the bacteria after 24 h visible light irradiation at room temperature. Using X-ray photoelectron spectroscopy, the lower photoinactivation efficiencies of the ZnO@CdS nanorod heterostructure at CdS thicknesses lower and higher than the optimum one were assigned to lower amounts of CdS nanoparticles and OH bonds (substantially existed on the hydrothermally synthesized ZnO nanorods) which are responsible for absorption of the visible light and production of hydroxyl radicals, respectively. Water contact angle measurements showed that the sample with more surface OH groups has a more hydrophilic surface and so more antibacterial activity.

  19. Vertically aligned ZnO@CdS nanorod heterostructures for visible light photoinactivation of bacteria

    International Nuclear Information System (INIS)

    Zirak, M.; Akhavan, O.; Moradlou, O.; Nien, Y.T.; Moshfegh, A.Z.

    2014-01-01

    Highlights: • Synthesis of vertically aligned ZnO@CdS nanorod heterostructures. • Effective antibacterial application of the ZnO@CdS nanorods under visible light irradiation. • Determination of the optimum loading of CdS on the ZnO nanorods in the antibacterial application. -- Abstract: Vertically aligned ZnO@CdS nanorod heterostructure films with various loadings of CdS nanoparticle shell were synthesized and applied in photoinactivation of Escherichia coli bacteria under visible light irradiation. While neither the bare ZnO nanorods (with band-gap energy (E g ) of ∼3.28 eV) under visible light irradiation nor the nanorod heterostructures in dark exhibited any significant antibacterial activity, the ZnO@CdS nanorod heterostructures (with E g ∼2.5–2.6 eV) could successfully inactivate the bacteria under visible light irradiation. Furthermore, it was found that an optimum loading of the CdS shell (corresponding to the effective thickness less than ∼15 nm) is required to achieve a complete inactivation of the bacteria after 24 h visible light irradiation at room temperature. Using X-ray photoelectron spectroscopy, the lower photoinactivation efficiencies of the ZnO@CdS nanorod heterostructure at CdS thicknesses lower and higher than the optimum one were assigned to lower amounts of CdS nanoparticles and OH bonds (substantially existed on the hydrothermally synthesized ZnO nanorods) which are responsible for absorption of the visible light and production of hydroxyl radicals, respectively. Water contact angle measurements showed that the sample with more surface OH groups has a more hydrophilic surface and so more antibacterial activity

  20. Micromagnetic sensors and Dirac fermions in HgTe heterostructures

    International Nuclear Information System (INIS)

    Buettner, Bastian

    2012-01-01

    , extracted from the noise of the sensor. The observed high signal-to-noise ratio validates the detection limit of this sensor in terms of geometry. This would be reached for a magnet (same material) with quadratic crosssection for an edge length of 3.3 nm. Moreover, the feasibility of this sensor for operation in a wide temperature range (T=mK..>200 K) and high magnetic fields has been confirmed. The second micromagnetic sensor is the micro-SQUID (micro-Superconducting-QUantum-Interference-Device) based on niobium. The typical sensor area of the devices built in this work was (1.0.1.0) μm 2 , with constrictions of about 20 nm. The characterization of this device demonstrates an amazing field sensitivity (regarding its size) of δB -4 Φ 0 and a similar magnetic moment resolution of δM∼10 2 μ B . Furthermore, the introduction of an ellipsoidal permalloy magnet (axes: 200 nm and 400 nm, thickness 30 nm) substantiates the suitability for the detection of minuscule, localized magnetic fields. The second part of the thesis deals with the peculiar transport properties of HgTe quantum wells. These rely on the linear contribution to the band structure inherent to the heterostructure. Therefore the system can be described by an effective Dirac Hamiltonian, whose Dirac mass is tunable by the variation of the quantum well thickness. By fabrication and characterization of a systematical series of substrates, a system with vanishing Dirac mass (zero energy gap) has been confirmed. This heterostructure therefore resembles graphene (a monolayer of graphite), with the difference of exhibiting only one valley in the energy dispersion of the Brillouin zone. Thus parasitical intervalley scattering cannot occur. The existence of this system has been proven by the agreement of theoretical predictions, based on widely accepted band structure calculations with the experiment (Landau level dispersion, conductivity). Furthermore, another particularity of the band structure - the transition from

  1. Quantum engineering of transistors based on 2D materials heterostructures

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  2. Quantum engineering of transistors based on 2D materials heterostructures.

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  3. Enhancing Light Emission of ZnO-Nanofilm/Si-Micropillar Heterostructure Arrays by Piezo-Phototronic Effect.

    Science.gov (United States)

    Li, Xiaoyi; Chen, Mengxiao; Yu, Ruomeng; Zhang, Taiping; Song, Dongsheng; Liang, Renrong; Zhang, Qinglin; Cheng, Shaobo; Dong, Lin; Pan, Anlian; Wang, Zhong Lin; Zhu, Jing; Pan, Caofeng

    2015-06-22

    n-ZnO nanofilm/p-Si micropillar heterostructure light-emitting diode (LED) arrays for white light emissions are achieved and the light emission intensity of LED array is enhanced by 120% under -0.05% compressive strains. These results indicate a promising approach to fabricate Si-based light-emitting components with high performances enhanced by piezo-phototronic effect, with potential applications in touchpad technology, personalized signatures, smart skin, and silicon-based photonic integrated circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Composition and strain effects in Type I and Type II heterostructure ZnSe/Cd(Zn)S and ZnSe/Cd1-xZnxS core/shell quantum dots

    Science.gov (United States)

    Gheshlaghi, Negar; Pisheh, Hadi Sedaghat; Ünlü, Hilmi

    2017-11-01

    We investigated the effect of ternary shell alloy composition on the bandgap and diameter of core of ZnSe / Cd1 - x Znx S heterostructure core/shell quantum dots, which were synthesized by using a simple colloidal technique. Characterization by using the x-ray diffraction (XRD), transmission electron microscopy (TEM), UV-Vis absorption and fluorescence emission spectroscopic techniques indicate that (i) there is a transition of ZnSe / Cd0.6 Zn0.4 S Type-I heterostructure (electrons and holes tend to localize in core) to ZnSe / Cd0.75 Zn0.25 S quasi-Type-II heterostructures (holes tend to localized in the core and electrons are delocalized) and (ii) then after large red shift and Stock-shift in PL emission spectra but not a distinct absorption peak in UV spectra become noticeable in ZnSe/Cd0.75Zn0.25 S quasi-Type II and ZnSe/CdS Type II heterostructures (electrons are localized in core and holes are localized in shell). Furthermore, the increase of Cd:S ratio in shell alloy composition shifts the XRD peaks to lower 2θ degrees which corresponds to tensile strain in the ZnSe core. Finally, the hydrostatic interfacial strain has effect on the squeezing or stretching the capped core: A decrease of compressive force on core from ZnSe/ZnS to tensile force in ZnSe/CdS with increase in Cd:S ratio indicates that transition of compressive strain to tensile strain takes place with the transition from Type-I to II heterostructure.

  5. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Energy Technology Data Exchange (ETDEWEB)

    Dikareva, N. V., E-mail: dnat@ro.ru; Vikhrova, O. V.; Zvonkov, B. N. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Malekhonova, N. V. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Pirogov, A. V.; Pavlov, D. A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation)

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  6. Charge transport in non-polar and semi-polar III-V nitride heterostructures

    International Nuclear Information System (INIS)

    Konar, Aniruddha; Verma, Amit; Fang, Tian; Zhao, Pei; Jana, Raj; Jena, Debdeep

    2012-01-01

    Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive approach is adopted, starting from an investigation of the differences in the electronic bandstructure along different polar orientations of GaN. The polarization fields along various orientations are then discussed, followed by the low-field electron and hole mobilities. A number of scattering mechanisms that are specific to non-polar and semi-polar GaN heterostructures are identified, and their effects are evaluated. Many of these scattering mechanisms originate due to the coupling of polarization with disorder and defects in various incarnations depending on the crystal orientation. The effect of polarization orientation on carrier injection into quantum-well light-emitting diodes is discussed. This paper ends with a discussion of orientation-dependent high-field charge-transport properties including velocity saturation, instabilities and tunneling transport. Possible open problems and opportunities are also discussed. (paper)

  7. Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

    Science.gov (United States)

    Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

    2018-03-01

    It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  8. Heterostructures based on two-dimensional layered materials and their potential applications

    KAUST Repository

    Li, Ming-yang; Chen, Chang-Hsiao; Shi, Yumeng; Li, Lain-Jong

    2015-01-01

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  9. Heterostructures based on two-dimensional layered materials and their potential applications

    KAUST Repository

    Li, Ming-yang

    2015-12-04

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  10. Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Trunkin, I. N.; Presniakov, M. Yu.; Vasiliev, A. L., E-mail: a.vasiliev56@gmail.com [National Research Centre “Kurchatov Institute” (Russian Federation)

    2017-03-15

    Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.

  11. Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Joseph J. Freedsman

    2012-06-01

    Full Text Available The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN and AlGaN layers (DT-AlGaN respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max. Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

  12. Luminance mechanisms in green organic light-emitting devices fabricated utilizing tris(8-hydroxyquinoline)aluminum/4,7-diphenyl-1, 10-phenanthroline multiple heterostructures acting as an electron transport layer.

    Science.gov (United States)

    Choo, Dong Chul; Seo, Su Yul; Kim, Tae Whan; Jin, You Young; Seo, Ji Hyun; Kim, Young Kwan

    2010-05-01

    The electrical and the optical properties in green organic light-emitting devices (OLEDs) fabricated utilizing tris(8-hydroxyquinoline)aluminum (Alq3)/4,7-diphenyl-1,10-phenanthroline (BPhen) multiple heterostructures acting as an electron transport layer (ETL) were investigated. The operating voltage of the OLEDs with a multiple heterostructure ETL increased with increasing the number of the Alq3/BPhen heterostructures because more electrons were accumulated at the Alq3/BPhen heterointerfaces. The number of the leakage holes existing in the multiple heterostructure ETL of the OLEDs at a low voltage range slightly increased due to an increase of the internal electric field generated from the accumulated electrons at the Alq3/BPhen heterointerface. The luminance efficiency of the OLEDs with a multiple heterostructure ETL at a high voltage range became stabilized because the increase of the number of the heterointerface decreased the quantity of electrons accumulated at each heterointerface.

  13. Synthesis and Photocatalytic Properties of Reduced Graphene Oxides Loaded-nano ZnS/CuS Heterostructures

    Directory of Open Access Journals (Sweden)

    ZENG Bin

    2017-12-01

    Full Text Available The reduced graphene oxides(rGO loaded-nano ZnS nanoparticles were fabricated by microwave heating method and by ion exchanged reaction reduced graphene oxides(rGO loaded-nano ZnS/CuS heterostructures were obtained. The structure, morphology were characterized via scanning electron microscopy(SEM, transmission electron microscopy(TEM and X-ray diffraction pattern(XRD. The effect of the mass fraction of graphene oxides, sulfur source and microwave heating time on the morphology and photocatalyitc performance were discussed. The results show that graphene uniformly loaded-nano ZnS/CuS heterostructures are obtained on the condition of graphene mass fraction of 10%, thioacetamide acting as sulfur source, microwave heating time is 30min. rGO-loaded nano ZnS/CuS heterostructures nanoparticles enhance photocatalytic performance with 81.2% decomposition of MO in 150min under visible light, demonstrating the excellent photocatalytic performance. The high visible photocatalytic performances are attributed to photoinduced interfacial charge transfer in the nano heterostructures and their further separation and transfer by rGO.

  14. Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures

    Science.gov (United States)

    Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan

    Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.

  15. Modeling quantization effects in field effect transistors

    International Nuclear Information System (INIS)

    Troger, C.

    2001-06-01

    Numerical simulation in the field of semiconductor device development advanced to a valuable, cost-effective and flexible facility. The most widely used simulators are based on classical models, as they need to satisfy time and memory constraints. To improve the performance of field effect transistors such as MOSFETs and HEMTs these devices are continuously scaled down in their dimensions. Consequently the characteristics of such devices are getting more and more determined by quantum mechanical effects arising from strong transversal fields in the channel. In this work an approach based on a two-dimensional electron gas is used to describe the confinement of the carriers. Quantization is considered in one direction only. For the derivation of a one-dimensional Schroedinger equation in the effective mass framework a non-parabolic correction for the energy dispersion due to Kane is included. For each subband a non-parabolic dispersion relation characterized by subband masses and subband non-parabolicity coefficients is introduced and the parameters are calculated via perturbation theory. The method described in this work has been implemented in a software tool that performs a self-consistent solution of Schroedinger- and Poisson-equation for a one-dimensional cut through a MOS structure or heterostructure. The calculation of the carrier densities is performed assuming Fermi-Dirac statistics. In the case of a MOS structure a metal or a polysilicon gate is considered and an arbitrary gate bulk voltage can be applied. This allows investigating quantum mechanical effects in capacity calculations, to compare the simulated data with measured CV curves and to evaluate the results obtained with a quantum mechanical correction for the classical electron density. The behavior of the defined subband parameters is compared to the value of the mass and the non-parabolicity coefficient from the model due to Kane. Finally the presented characterization of the subbands is applied

  16. Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

    KAUST Repository

    Ortiz Pauyac, Christian

    2013-06-26

    In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

  17. Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

    KAUST Repository

    Ortiz Pauyac, Christian; Wang, Xuhui; Chshiev, Mairbek; Manchon, Aurelien

    2013-01-01

    In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

  18. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Science.gov (United States)

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  19. Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

    KAUST Repository

    Hanna, Amir

    2016-11-01

    This dissertation presents a unique concept for a device architecture named the nanotube (NT) architecture, which is capable of higher drive current compared to the Gate-All-Around Nanowire architecture when applied to heterostructure Tunnel Field Effect Transistors. Through the use of inner/outer core-shell gates, heterostructure NT TFET leverages physically larger tunneling area thus achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. We discuss the physics of p-type (Silicon/Indium Arsenide) and n-type (Silicon/Germanium hetero-structure) based TFETs. Numerical TCAD simulations have shown that NT TFETs have 5x and 1.6 x higher normalized ION when compared to GAA NW TFET for p and n-type TFETs, respectively. This is due to the availability of larger tunneling junction cross sectional area, and lower Shockley-Reed-Hall recombination, while achieving sub 60 mV/dec performance for more than 5 orders of magnitude of drain current, thus enabling scaling down of Vdd to 0.5 V. This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving rise to up to 50% larger device width, without occupying extra chip area. The novel architecture shows 2x higher output drive current per unit chip area when compared to conventional planar architecture. The current increase is attributed to both the extra device width and 50% enhancement in field effect mobility due to electrostatic gating effects. Digital circuits are fabricated to demonstrate the potential of integrating WC TFT based circuits. WC inverters have shown 2× the peak-to-peak output voltage for the same input, and ~2× the operation frequency of the planar inverters for the same peak-to-peak output voltage. WC NAND circuits have shown 2× higher peak-to-peak output voltage, and 3× lower high-to-low propagation

  20. The effect of the In concentration on the surface morphology of InGaAs-GaAs heterostructures grown by MBE on GaAs substrate

    International Nuclear Information System (INIS)

    Gómez-Barojas, E; Serrano-Rojas, R M; Rodríguez-Moreno, M A; Santamaría-Juárez, G; Silva-González, R; a. Sección, San Luis Potosí, S. L. P., 78100 (Mexico))" data-affiliation=" (Instituto de Investigación en Comunicación Óptica. Universidad Autónoma de San Luis Potosí, Av. Karakorum 1470, Col. Lomas Altas 4a. Sección, San Luis Potosí, S. L. P., 78100 (Mexico))" >Vidal-Borbolla, M A

    2014-01-01

    A set of 3 heterostructures were formed by 10 periods of InGaAs-GaAs epitaxially grown on GaAs substrate by means of a molecular beam epitaxial system. Scanning electron microscopy (SEM) cross section images at high magnification show that the heterostructures present good periodicity. SEM micrographs of the surface morphology chemically etched show the coalescence effect of In due to an unequal etching rate of In and GaAs. Auger electron spectroscopy (AES) depth profiles show that the first GaAs layers in the 3 samples are off-stoichiometric and that the alloy layers present In square and triangular depth profiles

  1. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Science.gov (United States)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  2. Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

    Science.gov (United States)

    Mukherjee, Devajyoti

    Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

  3. NiS and MoS2 nanosheet co-modified graphitic C3N4 ternary heterostructure for high efficient visible light photodegradation of antibiotic.

    Science.gov (United States)

    Lu, Xuejun; Wang, Yu; Zhang, Xinyi; Xu, Guangqing; Wang, Dongmei; Lv, Jun; Zheng, Zhixiang; Wu, Yucheng

    2018-01-05

    The development of efficient solar driven catalytic system for the degradation of antibiotics has become increasingly important in environmental protection and remediation. Non-noble-metal NiS and MoS 2 nanosheet co-modified graphitic C 3 N 4 ternary heterostructure has been synthesized via a facile combination of hydrothermal and ultrasound method, and the ternary heterostructure has been utilized for photocatalytic degradation of antibiotic agents. The antibiotics of ciprofloxacin (CIP) and tetracycline hydrochloride (TC) were photodegraded by the hybrid under the visible light. The optimal photodegradation rate of the ternary heterostructure reaches about 96% after 2h irradiation, which is 2.1 times higher than that of pure g-C 3 N 4 for TC degradation. The photocatalytic degradation rates of the ternary heterostructure for both CIP and TC obey the pseudo-first-order kinetic model. The enhanced visible light adsorption and charge separation efficiency contribute to the photocatalytic performance of the ternary heterostructure. This work provides new insights and pathways by which efficient degradation of antibiotics can be achieved and will stimulate further studies in this important field. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    Energy Technology Data Exchange (ETDEWEB)

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  5. Synthesis of core-shell heterostructured Cu/Cu2O nanowires monitored by in situ XRD as efficient visible-light photocatalysts

    KAUST Repository

    Chen, Wei; Fan, Zhongli; Lai, Zhiping

    2013-01-01

    strategy for fabricating efficiently core-shell heterostructured nanowires and provides the potential for developing their applications in electronic devices, for environmental remediation and in solar energy utilization fields. This journal is © The Royal

  6. Synthesis of AgI/Bi2MoO6 nano-heterostructure with enhanced visible-light photocatalytic property

    Directory of Open Access Journals (Sweden)

    Li Zhang

    2018-04-01

    Full Text Available A novel nano-heterostructure of AgI/Bi2MoO6 photocatalyst was successfully synthesized via a facile deposition-precipitation method. The samples were systematically characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray photoemission spectroscopy, UV–Vis absorption spectroscopy, and photoluminescence spectra. While sole Bi2MoO6 or AgI showed poor activity toward photocatalytic rhodamine B degradation, the nano-heterostructure was found with superior performance. The AgI/Bi2MoO6 composite with an optimal content of 20 wt% AgI exhibited the highest photocatalytic degradation rate. Rhodamine B was totally degraded within 75 min visible-light irradiation. Moreover, the hybrid photocatalyst also showed a fairly good stability for several-cycle reuse. This study indicates that the AgI/Bi2MoO6 nano-heterostructure can be used as an effective candidate for photocatalytic degradation of organic pollutants. Keywords: Heterostructure, Photocatalyst, RhB-degradation

  7. Surface- and interface-engineered heterostructures for solar hydrogen generation

    Science.gov (United States)

    Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

    2018-04-01

    Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

  8. Deterministic Construction of Plasmonic Heterostructures in Well-Organized Arrays for Nanophotonic Materials.

    Science.gov (United States)

    Liu, Xiaoying; Biswas, Sushmita; Jarrett, Jeremy W; Poutrina, Ekaterina; Urbas, Augustine; Knappenberger, Kenneth L; Vaia, Richard A; Nealey, Paul F

    2015-12-02

    Plasmonic heterostructures are deterministically constructed in organized arrays through chemical pattern directed assembly, a combination of top-down lithography and bottom-up assembly, and by the sequential immobilization of gold nanoparticles of three different sizes onto chemically patterned surfaces using tailored interaction potentials. These spatially addressable plasmonic chain nanostructures demonstrate localization of linear and nonlinear optical fields as well as nonlinear circular dichroism. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

    Science.gov (United States)

    Hu, Xue-Rong; Zheng, Ji-Ming; Ren, Zhao-Yu

    2018-04-01

    Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

  10. Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap

    Science.gov (United States)

    Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Zhu, Yao-hui; Wu, Meng; Wang, Hui; Cen, Yu-lang; Guo, Wen-hui; Pan, Shu-hang

    2018-07-01

    Within the framework of the spin-polarized density-functional theory, we have studied the electronic and magnetic properties of InSe/black-phosphorus (BP) heterostructure doped with 3d transition-metal (TM) atoms from Sc to Zn. The calculated binding energies show that TM-atom doping in the van der Waals (vdW) gap of InSe/BP heterostructure is energetically favorable. Our results indicate that magnetic moments are induced in the Sc-, Ti-, V-, Cr-, Mn- and Co-doped InSe/BP heterostructures due to the existence of non-bonding 3d electrons. The Ni-, Cu- and Zn-doped InSe/BP heterostructures still show nonmagnetic semiconductor characteristics. Furthermore, in the Fe-doped InSe/BP heterostructure, the half-metal property is found and a high spin polarization of 100% at the Fermi level is achieved. The Cr-doped InSe/BP has the largest magnetic moment of 4.9 μB. The Sc-, Ti-, V-, Cr- and Mn-doped InSe/BP heterostructures exhibit antiferromagnetic ground state. Moreover, the Fe- and Co-doped systems display a weak ferromagnetic and paramagnetic coupling, respectively. Our studies demonstrate that the TM doping in the vdW gap of InSe/BP heterostructure is an effective way to modify its electronic and magnetic properties.

  11. Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

    Science.gov (United States)

    Aghandeh, Hadi; Sedigh Ziabari, Seyed Ali

    2017-11-01

    This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

  12. A quantitative analysis on the interfacial effect in the Pt/Ba0.5Sr0.5TiO3/La0.67Sr0.33MnO3 heterostructure

    International Nuclear Information System (INIS)

    Miao, J; Wang, Y; Tian, H Y; Zhou, X Y; Chan, H L W; Choy, C L; Cao, L X; Zhao, B R

    2006-01-01

    The heterostructure of Pt/Ba 0.5 Sr 0.5 TiO 3 /La 0.67 Sr 0.33 MnO 3 (Pt/BST/LSMO) with the BST thickness ranging from 120 to 550 nm was fabricated by pulsed laser deposition. The dielectric constant (ε) of the heterostructure was measured under different electrical fields (E) and frequency (f). A strong thickness dependence of the value of ε, the ε-E dependence and the ε-f dependence were observed, which can be well explained by the series-capacitor model, based on the assumption that the heterostructure electrically consists of a 'bulk' layer and an interfacial layer between the Pt and BST layers. The dielectric properties of the 'bulk' layer and the interface layer were obtained. At room temperature, the dielectric constant of the 'bulk' layer was 1204 (at 100 kHz) and had a power law dependence on frequency. The ratio of thickness over the dielectric constant (d i /ε i ) of the interface layer, which was used to characterize the property of the Pt/BST interface, was found to be around 0.08 nm at room temperature and to be independent of frequency

  13. Resonant Tunneling in Photonic Double Quantum Well Heterostructures

    Directory of Open Access Journals (Sweden)

    Cox Joel

    2010-01-01

    Full Text Available Abstract Here, we study the resonant photonic states of photonic double quantum well (PDQW heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.

  14. Application of Metal Oxide Heterostructures in Arsenic Removal from Contaminated Water

    Directory of Open Access Journals (Sweden)

    Lei Chen

    2014-01-01

    Full Text Available It has become one of the major environmental problems for people worldwide to be exposed to high arsenic concentrations through contaminated drinking water, and even the long-term intake of small doses of arsenic has a carcinogenic effect. As an efficient and economic approach for the purification of arsenic-containing water, the adsorbents in adsorption processes have been widely studied. Among a variety of adsorbents reported, the metal oxide heterostructures with high surface area and specific affinity for arsenic adsorption from aqueous systems have demonstrated a promising performance in practical applications. This review paper aims to summarize briefly the metal oxide heterostructures in arsenic removal from contaminated water, so as to provide efficient, economic, and robust solutions for water purification.

  15. Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

    Science.gov (United States)

    Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

    2016-04-01

    We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

  16. Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

    Science.gov (United States)

    Chandrasekar, L. Bruno; Gnanasekar, K.; Karunakaran, M.

    2018-06-01

    The effect of δ-potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ- potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ- potential, whereas the tunneling life time of electrons highly influenced by the position of the δ- potential and not on the height. These results might be helpful for the fabrication of spin-filters.

  17. High sensitivity zero-biased magnetic field sensor based on multiphase laminate heterostructures with FeCuNbSiB nanocrystalline soft magnetic alloy

    Science.gov (United States)

    Qiu, Jing; Wen, Yumei; Li, Ping; Chen, Hengjia

    2016-05-01

    In this paper, a high sensitivity zero-biased magnetic field sensor based on multiphase laminate heterostructures consisting of FeCuNbSiB/Terfenol-D (Tb1-xDyxFe2)/PZT (Pb(Zr1-x,Tix)O3)/Terfenol-D/PZT/Ternol-D/FeCuNbSiB (FMPMPMF) is presented, whose ME coupling characteristics and sensing performances have been investigated. Compared to traditional Terfenol-D/PZT/Terfenol-D (MPM) and Terfenol-D/PZT/Terfenol-D/PZT/Terfenol-D (MPMPM) sensors, the zero-biased ME coupling characteristics of FMPMPMF sensor were significantly improved, owing to a build-in magnetic field in FeCuNbSiB/Terfenol-D layers. The optimum zero-biased resonant ME voltage coefficient of 3.02 V/Oe is achieved, which is 1.65 times as great as that of MPMPM and 2.51 times of MPM sensors. The mean value of low-frequency ME field coefficient of FMPMPMF reaches 122.53 mV/cm Oe, which is 2.39 times as great as that of MPMPM and 1.79 times of MPM sensors. Meanwhile, the induced zero-biased ME voltage of FMPMPMF sensor shows an excellent linear relationship to ac magnetic field both at the low frequency (1 kHz) and the resonant frequency (106.6 kHz). Remarkably, it indicates that the proposed zero-biased magnetic field sensor give the prospect of being able to applied to the field of highly sensitive ac magnetic field sensing.

  18. Temperature Dependence of the Resonant Magnetoelectric Effect in Layered Heterostructures

    Directory of Open Access Journals (Sweden)

    Dmitrii A. Burdin

    2017-10-01

    Full Text Available The dependence of the resonant direct magnetoelectric effect on temperature is studied experimentally in planar composite structures. Samples of rectangular shapes with dimensions of 5 mm × 20 mm employed ferromagnetic layers of either an amorphous (metallic glass alloy or nickel with a thickness of 20–200 μm and piezoelectric layers of single crystalline langatate material or lead zirconate titanate piezoelectric ceramics with a thickness of 500 μm. The temperature of the samples was varied in a range between 120 and 390 K by blowing a gaseous nitrogen stream around them. It is shown that the effective characteristics of the magnetoelectric effect—such as the mechanical resonance frequency fr, the quality factor Q and the magnitude of the magnetoelectric coefficient αE at the resonance frequency—are contingent on temperature. The interrelations between the temperature changes of the characteristics of the magnetoelectric effect and the temperature variations of the following material parameters—Young’s modulus Y, the acoustic quality factor of individual layers, the dielectric constant ε, the piezoelectric modulus d of the piezoelectric layer as well as the piezomagnetic coefficients λ(n of the ferromagnetic layer—are established. The effect of temperature on the characteristics of the nonlinear magnetoelectric effect is observed for the first time. The results can be useful for designing magnetoelectric heterostructures with specified temperature characteristics, in particular, for the development of thermally stabilized magnetoelectric devices.

  19. Study of interface properties in LaAlO3/SrTiO3 heterostructures

    International Nuclear Information System (INIS)

    Thiel, Stefan Patrick

    2009-01-01

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  20. Majorana zero modes in superconductor-semiconductor heterostructures

    Science.gov (United States)

    Lutchyn, R. M.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Krogstrup, P.; Marcus, C. M.; Oreg, Y.

    2018-05-01

    Realizing topological superconductivity and Majorana zero modes in the laboratory is a major goal in condensed-matter physics. In this Review, we survey the current status of this rapidly developing field, focusing on proposals for the realization of topological superconductivity in semiconductor-superconductor heterostructures. We examine materials science progress in growing InAs and InSb semiconductor nanowires and characterizing these systems. We then discuss the observation of robust signatures of Majorana zero modes in recent experiments, paying particular attention to zero-bias tunnelling conduction measurements and Coulomb blockade experiments. We also outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation.

  1. Electric field control of magnetism using BiFeO3-based heterostructures

    International Nuclear Information System (INIS)

    Heron, J. T.; Schlom, D. G.; Ramesh, R.

    2014-01-01

    Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO 3 , exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures

  2. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Goyal, Nitin, E-mail: nitin@unik.no [Carinthian Tech Research CTR AG, Europastraße 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria); Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway); Fjeldly, Tor A. [Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)

    2014-07-21

    In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.

  3. Quantum interference effects for the electronic fluctuations in quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, J.G.G.S. [Universidade Federal da Paraiba (UFPB), Rio Tinto, PB (Brazil). Departamento de Ciencias Exatas; Hussein, M.S. [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica; Barbosa, A.L.R. [Universidade Federal Rural de Pernambuco (UAEADTec/UFRPE), Recife, PE (Brazil). Unidade Academica de Ensino a Distancia. Pos-Graduacao em Fisica Aplicada

    2014-07-01

    For the main quantum interference term of coherent electronic transport, we study the effect of temperature, perpendicular and/or parallel magnetic fields, spin-orbit coupling and tunneling rates in both metallic grains and mesoscopic heterostructures. We show that the Zeeman effects determines a crucial way to characterize the quantum interference phenomena of the noise for anisotropic systems (mesoscopic heterostructures), qualitatively distinct from those observed in isotropic structures (metallic grains). (author)

  4. Quantum interference effects for the electronic fluctuations in quantum dots

    International Nuclear Information System (INIS)

    Ramos, J.G.G.S.; Hussein, M.S.; Barbosa, A.L.R.

    2014-01-01

    For the main quantum interference term of coherent electronic transport, we study the effect of temperature, perpendicular and/or parallel magnetic fields, spin-orbit coupling and tunneling rates in both metallic grains and mesoscopic heterostructures. We show that the Zeeman effects determines a crucial way to characterize the quantum interference phenomena of the noise for anisotropic systems (mesoscopic heterostructures), qualitatively distinct from those observed in isotropic structures (metallic grains). (author)

  5. Magnetic effects on the dielectric and polarization properties in BiAlO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yanan [Shaanxi Key Laboratory of Condensed Matter Structures and Properties, Northwestern Polytechnical University, Xi' an (China); College of Engineering Management, Shaanxi Radio and Television University, Xi' an (China); Luo, Bingcheng; Chen, Changle; Xing, Hui; Wang, Jianyuan; Jin, Kexin [Shaanxi Key Laboratory of Condensed Matter Structures and Properties, Northwestern Polytechnical University, Xi' an (China)

    2017-09-15

    BiAlO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure was fabricated on LaAlO{sub 3} (111) substrate by pulsed laser deposition technology. A remarkable magneto-resistivity effect was detected at H = 1 T near the metal-insulator phase transition temperature (T{sub MI}) of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}. The magneto-dielectric constant shows an anomaly near T{sub MI} of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}, whereas the ferroelectric polarization increases under magnetic field and its variation shows the similar anomaly near T{sub MI} of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}, which could be assigned to the important role of the phase transformation of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}. The magnetic moment of the BiAlO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure distinctly arises compared to the single La{sub 0.67}Sr{sub 0.33}MnO{sub 3} layer, probably on account of the spin-orbit coupling effect at the interface, and the relative magnetization variation also shows an anomaly near T{sub MI} of La{sub 0.67}Sr{sub 0.33}MnO{sub 3}. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun; Schwingenschlö gl, Udo

    2018-01-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence

  7. Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects.

    Science.gov (United States)

    Pala, M G; Baltazar, S; Martins, F; Hackens, B; Sellier, H; Ouisse, T; Bayot, V; Huant, S

    2009-07-01

    We study scanning gate microscopy (SGM) in open quantum rings obtained from buried semiconductor InGaAs/InAlAs heterostructures. By performing a theoretical analysis based on the Keldysh-Green function approach we interpret the radial fringes observed in experiments as the effect of randomly distributed charged defects. We associate SGM conductance images with the local density of states (LDOS) of the system. We show that such an association cannot be made with the current density distribution. By varying an external magnetic field we are able to reproduce recursive quasi-classical orbits in LDOS and conductance images, which bear the same periodicity as the Aharonov-Bohm effect.

  8. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  9. Escher-like quasiperiodic heterostructures

    International Nuclear Information System (INIS)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L; Costa, A F

    2009-01-01

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  10. Escher-like quasiperiodic heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L [Departamento de Optica, Facultad de Fisica, Universidad Complutense, 28040 Madrid (Spain); Costa, A F [Departamento de Matematicas Fundamentales, Facultad de Ciencias, Universidad Nacional de Educacion a Distancia, Senda del Rey 9, 28040 Madrid (Spain)

    2009-05-15

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  11. Synthesis of core-shell heterostructured Cu/Cu2O nanowires monitored by in situ XRD as efficient visible-light photocatalysts

    KAUST Repository

    Chen, Wei

    2013-01-01

    Core-shell heterostructured Cu/Cu2O nanowires with a high aspect ratio were synthesized from Cu foam using a novel oxidation/reduction process. In situ XRD was used as an efficient tool to acquire phase transformation details during the temperature-programmed oxidation of Cu foam and the subsequent reduction process. Based on knowledge of the crucial phase transformation, optimal synthesis conditions for producing high-quality CuO and core-shell Cu/Cu2O nanowires were determined. In favor of efficient charge separation induced by the special core-shell heterostructure and the advanced three-dimensional spatial configuration, Cu/Cu2O nanowires exhibited superior visible-light activity in the degradation of methylene blue. The present study illustrates a novel strategy for fabricating efficiently core-shell heterostructured nanowires and provides the potential for developing their applications in electronic devices, for environmental remediation and in solar energy utilization fields. This journal is © The Royal Society of Chemistry.

  12. Micromagnetic sensors and Dirac fermions in HgTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Buettner, Bastian

    2012-08-06

    cross-section of (100.20) nm{sup 2} confirms the expected resolution ability, extracted from the noise of the sensor. The observed high signal-to-noise ratio validates the detection limit of this sensor in terms of geometry. This would be reached for a magnet (same material) with quadratic crosssection for an edge length of 3.3 nm. Moreover, the feasibility of this sensor for operation in a wide temperature range (T=mK..>200 K) and high magnetic fields has been confirmed. The second micromagnetic sensor is the micro-SQUID (micro-Superconducting-QUantum-Interference-Device) based on niobium. The typical sensor area of the devices built in this work was (1.0.1.0) {mu}m{sup 2}, with constrictions of about 20 nm. The characterization of this device demonstrates an amazing field sensitivity (regarding its size) of {delta}B<1 {mu}T. Even though the sensor was 25 times larger than the best micro-Hall sensor, it provided an excellent flux resolution in the order of {delta}{Phi}{approx}5.10{sup -4} {Phi}{sub 0} and a similar magnetic moment resolution of {delta}M{approx}10{sup 2} {mu}{sub B}. Furthermore, the introduction of an ellipsoidal permalloy magnet (axes: 200 nm and 400 nm, thickness 30 nm) substantiates the suitability for the detection of minuscule, localized magnetic fields. The second part of the thesis deals with the peculiar transport properties of HgTe quantum wells. These rely on the linear contribution to the band structure inherent to the heterostructure. Therefore the system can be described by an effective Dirac Hamiltonian, whose Dirac mass is tunable by the variation of the quantum well thickness. By fabrication and characterization of a systematical series of substrates, a system with vanishing Dirac mass (zero energy gap) has been confirmed. This heterostructure therefore resembles graphene (a monolayer of graphite), with the difference of exhibiting only one valley in the energy dispersion of the Brillouin zone. Thus parasitical intervalley scattering

  13. Micromagnetic sensors and Dirac fermions in HgTe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Buettner, Bastian

    2012-08-06

    nanomagnet with a cross-section of (100.20) nm{sup 2} confirms the expected resolution ability, extracted from the noise of the sensor. The observed high signal-to-noise ratio validates the detection limit of this sensor in terms of geometry. This would be reached for a magnet (same material) with quadratic crosssection for an edge length of 3.3 nm. Moreover, the feasibility of this sensor for operation in a wide temperature range (T=mK..>200 K) and high magnetic fields has been confirmed. The second micromagnetic sensor is the micro-SQUID (micro-Superconducting-QUantum-Interference-Device) based on niobium. The typical sensor area of the devices built in this work was (1.0.1.0) {mu}m{sup 2}, with constrictions of about 20 nm. The characterization of this device demonstrates an amazing field sensitivity (regarding its size) of {delta}B<1 {mu}T. Even though the sensor was 25 times larger than the best micro-Hall sensor, it provided an excellent flux resolution in the order of {delta}{Phi}{approx}5.10{sup -4} {Phi}{sub 0} and a similar magnetic moment resolution of {delta}M{approx}10{sup 2} {mu}{sub B}. Furthermore, the introduction of an ellipsoidal permalloy magnet (axes: 200 nm and 400 nm, thickness 30 nm) substantiates the suitability for the detection of minuscule, localized magnetic fields. The second part of the thesis deals with the peculiar transport properties of HgTe quantum wells. These rely on the linear contribution to the band structure inherent to the heterostructure. Therefore the system can be described by an effective Dirac Hamiltonian, whose Dirac mass is tunable by the variation of the quantum well thickness. By fabrication and characterization of a systematical series of substrates, a system with vanishing Dirac mass (zero energy gap) has been confirmed. This heterostructure therefore resembles graphene (a monolayer of graphite), with the difference of exhibiting only one valley in the energy dispersion of the Brillouin zone. Thus parasitical intervalley

  14. Facile synthesis of hierarchical Ag3PO4/TiO2 nanofiber heterostructures with highly enhanced visible light photocatalytic properties

    Science.gov (United States)

    Xie, Jinlei; Yang, Yefeng; He, Haiping; Cheng, Ding; Mao, Minmin; Jiang, Qinxu; Song, Lixin; Xiong, Jie

    2015-11-01

    Heterostructured semiconductor nanostructures have provoked great interest in the areas of energy, environment and catalysis. Herein, we report a novel hierarchical Ag3PO4/TiO2 heterostructure consisting of nearly spherical Ag3PO4 particles firmly coupled on the surface of TiO2 nanofibers (NFs). The construction of Ag3PO4/TiO2 heterostructure with tailored morphologies, compositions and optical properties was simply achieved via a facile and green synthetic strategy involving the electrospinning and solution-based processes. Owing to the synergetic effects of the components, the resulting hybrid heterostructures exhibited much improved visible light photocatalytic performance, which could degrade the RhB dye completely in 7.5 min. In addition, the coupling of Ag3PO4 particles with UV-light-sensitive TiO2 NFs enabled full utilization of solar energy and less consumption of noble metals, significantly appealing for their practical use in new energy sources and environmental issues. The developed synthetic strategy was considered to be applicable for the rational design and construction of other heterostructured catalysts.

  15. Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

    Science.gov (United States)

    Gurevich, A. S.; Kochereshko, V. P.; Bleuse, J.; Mariette, H.; Waag, A.; Akimoto, R.

    2011-09-01

    The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

  16. Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, A S; Kochereshko, V P [A F Ioffe Physical-Technical Institute, St Petersburg 194021 (Russian Federation); Bleuse, J; Mariette, H [CEA-CNRS Group ' Nanophysique et Semiconducteurs' , CEA, INAC/SP2M, and Institut Neel, 17 rue des Martyrs, F-38054 Grenoble (France); Waag, A [Braunschweig Technical University, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Akimoto, R, E-mail: vladimir.kochereshko@mail.ioffe.ru [National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba Central 2-1, Tsukuba 305-8568 (Japan)

    2011-09-07

    The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

  17. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-01-01

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  18. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

    2016-06-15

    The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

  19. Effect of photocurrent amplification in In sub 2 O sub 3 -GaSe heterostructure

    CERN Document Server

    Drapak, S I

    2001-01-01

    The experimentally determined effects of originating the photocurrent amplification in the In sub 2 O sub 3 -GaSe heterostructure with localization of the barrier plane perpendicular to the semiconductor layers are described. The value of the amplification coefficient by the reverse displacement U = 10 V reached M approx = 82 and the absolute value of the current sensitivity - 30-32 A/W. The mechanism of the current transfer through the dielectric, inevitable originating on the gallium monoselenide surface, is determined on the basis of the volt-ampere characteristics study. The supposition is made on the change in the conductivity mechanisms by transferring the barrier plane from the parallel to the perpendicular one to the GaSe layers

  20. Synthesis; characterization; and growth mechanism of Au/CdS heterostructured nanoflowers constructed with nanorods

    International Nuclear Information System (INIS)

    Kong Qingcheng; Wu Rong; Feng Xiumei; Ye Cui; Hu Guanqi; Hu Jianqiang; Chen Zhiwu

    2011-01-01

    Research highlights: → Well-defined and flower-shaped Au/CdS heterostructured nanocrystals were for the first time synthesized. → The Au-nanorod-induced hydrothermal strategy was for the first time used to fabricate metal/semiconductor heterostructured nanomaterials. → A preliminary crystal growing mechanism was also proposed for better understanding the growth process of other Au/semiconductor heterostructure nanocrystals. → The route devised here should also be extendable to fabricate other Au/semiconductor heterostructure nanomaterials. - Abstract: Gold/sulfide cadmium (Au/CdS) heterostructured nanocrystals with a flower-like shape were for the first time synthesized through an Au-nanorod-induced hydrothermal method. The Au/CdS nanoflowers possessed the average size of about 350 nm while the nanorods constructing the nanoflowers had the average diameter, length, and aspect ratio of approximately 50 nm, 100 nm, and 2, respectively. Our method suggested that Au-nanorods played a decisive role in the formation of Au/CdS heterostructured nanoflowers, demonstrated by high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), energy-dispersive X-ray spectroscopy (EDS), and UV-visible absorption spectroscopy measurements. A preliminary experiment model to reveal the Au/CdS growth mechanism was also put forward. The route devised here should be perhaps extendable to fabricate other Au/semiconductor heterostructured nanomaterials, and the Au/CdS nanoflowers may have potential applications in nanodevices, biolabels, and clinical detection and diagnosis.

  1. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  2. Imaging the motion of electrons in 2D semiconductor heterostructures

    Science.gov (United States)

    Dani, Keshav

    Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

  3. Effect of lattice mismatch on the magnetic properties of nanometer-thick La0.9Ba0.1MnO3 (LBM) films and LBM/BaTiO3/LBM heterostructures

    Science.gov (United States)

    Mirzadeh Vaghefi, P.; Baghizadeh, A.; Willinger, M.; Lourenço, A. A. C. S.; Amaral, V. S.

    2017-12-01

    Oxide multiferroic thin films and heterostructures offer a wide range of properties originated from intrinsic coupling between lattice strain and nanoscale magnetic/electronic ordering. La0.9Ba0.1MnO3 (LBM) thin-films and LBM/BaTiO3/LBM (LBMBT) heterostructures were grown on single crystalline [100] silicon and [0001] Al2O3 using RF magnetron sputtering to study the effect of crystallinity and induced lattice mismatch in the film on magnetic properties of deposited films and heterostructures. The thicknesses of the films on Al2O3 and Si are 70 and 145 nm, respectively, and for heterostructures are 40/30/40 nm on both substrates. The microstructure of the films, state of strain and growth orientations was studied by XRD and microscopy techniques. Interplay of microstructure, strain and magnetic properties is further investigated. It is known that the crystal structure of substrates and imposed tensile strain affect the physical properties; i.e. magnetic behavior of the film. The thin layer grown on Al2O3 substrate shows out-of-plane compressive strain, while Si substrate induces tensile strain on the deposited film. The magnetic transition temperatures (Tc) of the LBM film on the Si and Al2O3 substrates are found to be 195 K and 203 K, respectively, slightly higher than the bulk form, 185 K. The LBMBT heterostructure on Si substrate shows drastic decrease in magnetization due to produced defects created by diffusion of Ti ions into magnetic layer. Meanwhile, the Tc in LBMBTs increases in respect to other studied single layers and heterostructure, because of higher tensile strain induced at the interfaces.

  4. Oscillatory bistability of real-space transfer in semiconductor heterostructures

    Science.gov (United States)

    Do˙ttling, R.; Scho˙ll, E.

    1992-01-01

    Charge transport parallel to the layers of a modulation-doped GaAs/AlxGa1-xAs heterostructure is studied theoretically. The heating of electrons by the applied electric field leads to real-space transfer of electrons from the GaAs into the adjacent AlxGa1-xAs layer. For sufficiently large dc bias, spontaneous periodic 100-GHz current oscillations, and bistability and hysteretic switching transitions between oscillatory and stationary states are predicted. We present a detailed investigation of complex bifurcation scenarios as a function of the bias voltage U0 and the load resistance RL. For large RL subcritical Hopf bifurcations and global bifurcations of limit cycles are displayed.

  5. Spin excitation and band-narrowing in Al{sub x}Ga{sub 1-x}As heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2010-11-01

    We studied the spin excitation in dependences of the applied electric field and lattice temperature (LT) via the measurements of the circularly polarized photoluminescence (CPPL) in Al{sub x}Ga{sub 1-x}As heterostructures (HSs). The intensity of CPPL was found to strongly depend on the electric field applied to the HSs. The CPPL was also found to enhance with decreasing LT. It was demonstrated that the observed LT dependence might be due to the LT-dependent band-gap shift of the HS materials.

  6. Lithium adsorption and migration in group IV-VI compounds and GeS/graphene heterostructures: a comparative study.

    Science.gov (United States)

    Hao, Kuan-Rong; Fang, Lincan; Yan, Qing-Bo; Su, Gang

    2018-04-18

    By means of first-principles calculations, the adsorption and transport properties of lithium (Li) in orthorhombic group IV-VI compounds MX (M = Ge, Sn; X = S, Se) and GeS/graphene heterostructures have been systematically investigated. Strong interactions and distinct charge transfer between Li and compounds MX are observed. The Li diffusion barriers along the zigzag direction are found to be much lower than that along the armchair direction in monolayer and bulk MX, showing distinct anisotropic diffusion features. In particular, monolayer GeS has a lowest barrier of 0.173 eV (zigzag) among them and it will transit from a semiconductor to a metallic state after Li intercalation, indicating fast Li and electron transport properties. As a comparison, the addition of graphene in a GeS/graphene heterostructure could enhance its binding with Li, decrease the Li diffusion barrier and inhibit the volume expansion dramatically, suggesting a potential performance improvement. Our study not only reveals the directional transport properties of Li in MX, but also improves the understanding of the role of graphene in the MX/graphene heterostructure, and shows great potential application in the field of electrode materials.

  7. Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

    Science.gov (United States)

    Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Yong Choi, Byung; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Wonwoo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus; Fischer, Felix; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael; Fasel, Roman; Bokor, Jeffrey

    2017-09-21

    Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch  ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on  > 1 μA at V d  = -1 V) and high I on /I off  ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 10 5 on-off current ratio.

  8. High-efficiency super capacitors based on hetero-structured α-MnO2 nanorods

    International Nuclear Information System (INIS)

    Ghouri, Zafar Khan; Shaheer Akhtar, M.; Zahoor, Awan; Barakat, Nasser A.M.; Han, Weidong; Park, Mira; Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye; Kim, Hak Yong

    2015-01-01

    Highlights: • Hetero-structured α-MnO 2 nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg −1 with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO 2 ) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO 2 nanorods. Supercapacitive performance of the hetero-structured α-MnO 2 nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO 2 hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO 6 ] structure yield a significantly high specific capacitance of 298 Fg −1 at 5 mV s −1 and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO 2 electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport

  9. Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements

    International Nuclear Information System (INIS)

    Lisesivdin, S B; Demirezen, S; Kasap, M; Ozcelik, S; Caliskan, M D; Ozbay, E; Yildiz, A

    2008-01-01

    Hall effect measurements on unintentionally doped Al 0.25 Ga 0.75 N/GaN/AlN heterostructures grown by metal organic chemical vapor deposition (MOCVD) were carried out as a function of temperature (20–300 K) and magnetic field (0–1.4 T). Magnetic-field-dependent Hall data are analyzed using the quantitative mobility spectrum analysis (QMSA) technique. The QMSA technique successfully separated electrons in the 2D electron gas (2DEG) at the Al 0.25 Ga 0.75 N/GaN interface from other 2D and 3D conduction mechanisms of the samples. 2DEG mobilities, carrier densities and conductivities of the investigated samples are compared at room temperature and low temperature (20 K). For a detailed investigation of the 2DEG-related growth parameters, the scattering analyses of the extracted 2DEG were carried out for all of the samples. Using the results of the scattering analyses, the relation between the growth and scattering parameters was investigated. Increments in the interface roughness (IFR) are reported with the increased GaN buffer growth temperatures. In addition, a linear relation between the deformation potential and interface roughness (IFR) scattering is pointed out for the investigated samples, which may lead to a better understanding of the mechanism of IFR scattering

  10. CdTe as a passivating layer in CdTe/HgCdTe heterostructures

    International Nuclear Information System (INIS)

    Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

    2008-01-01

    CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

  11. Effects of polarization of polar semiconductor on electrical properties of poly(vinylidene fluoride-trifluoroethylene)/ZnO heterostructures

    International Nuclear Information System (INIS)

    Yamada, Hiroaki; Yoshimura, Takeshi; Fujimura, Norifumi

    2015-01-01

    The electrical properties of heterostructures composed of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and ZnO with different crystallographic polarities, i.e., O- and Zn-polar ZnO, were investigated. Distinct differences in the capacitance-voltage and polarization-voltage characteristics between the P(VDF-TrFE)/O- and Zn-polar ZnO were obtained in the depletion regions of ZnO. The band configurations were determined by X-ray photoelectron spectroscopy (XPS) using a synchrotron radiation beam to analyze the differences in the electrical properties of the P(VDF-TrFE)/O- and Zn-polar ZnO. The XPS spectra indicated that the valence band maximum of P(VDF-TrFE) is 2.9 and 2.7 eV higher than Zn- and O-polar ZnO, respectively. Thus, both structures have staggered band configurations with large valence band offsets, and the spontaneous polarization of ZnO is less effective on the band lineup. The electrical properties of the P(VDF-TrFE)/ZnO heterostructures are modulated through carrier generation because of the polarization-mediated interface charges and the staggered band alignments of the P(VDF-TrFE)/ZnO with a large valence band offset

  12. Universal composition-structure-property maps for natural and biomimetic platelet-matrix composites and stacked heterostructures.

    Science.gov (United States)

    Sakhavand, Navid; Shahsavari, Rouzbeh

    2015-03-16

    Many natural and biomimetic platelet-matrix composites--such as nacre, silk, and clay-polymer-exhibit a remarkable balance of strength, toughness and/or stiffness, which call for a universal measure to quantify this outstanding feature given the structure and material characteristics of the constituents. Analogously, there is an urgent need to quantify the mechanics of emerging electronic and photonic systems such as stacked heterostructures. Here we report the development of a unified framework to construct universal composition-structure-property diagrams that decode the interplay between various geometries and inherent material features in both platelet-matrix composites and stacked heterostructures. We study the effects of elastic and elastic-perfectly plastic matrices, overlap offset ratio and the competing mechanisms of platelet versus matrix failures. Validated by several 3D-printed specimens and a wide range of natural and synthetic materials across scales, the proposed universally valid diagrams have important implications for science-based engineering of numerous platelet-matrix composites and stacked heterostructures.

  13. Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance.

    Science.gov (United States)

    Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen

    2017-10-19

    Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I on /I off ratio of 4.91 × 10 3 , a high photoconductive gain of 1.10 × 10 3 , a high detectivity of 1.65 × 10 13 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm -2 ). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

  14. Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures

    International Nuclear Information System (INIS)

    Wolfsteller, A.; Geyer, N.; Nguyen-Duc, T.-K.; Das Kanungo, P.; Zakharov, N.D.; Reiche, M.; Erfurth, W.; Blumtritt, H.; Werner, P.; Goesele, U.

    2010-01-01

    Silicon nanowires (NWs) and vertical nanowire-based Si/Ge heterostructures are expected to be building blocks for future devices, e.g. field-effect transistors or thermoelectric elements. In principle two approaches can be applied to synthesise these NWs: the 'bottom-up' and the 'top-down' approach. The most common method for the former is the vapour-liquid-solid (VLS) mechanism which can also be applied to grow NWs by molecular beam epitaxy (MBE). Although MBE allows a precise growth control under highly reproducible conditions, the general nature of the growth process via a eutectic droplet prevents the synthesis of heterostructures with sharp interfaces and high Ge concentrations. We compare the VLS NW growth with two different top-down methods: The first is a combination of colloidal lithography and metal-assisted wet chemical etching, which is an inexpensive and fast method and results in large arrays of homogenous Si NWs with adjustable diameters down to 50 nm. The second top-down method combines the growth of Si/Ge superlattices by MBE with electron beam lithography and reactive ion etching. Again, large and homogeneous arrays of NWs were created, this time with a diameter of 40 nm and the Si/Ge superlattice inside.

  15. Room-Temperature Quantum Ballistic Transport in Monolithic Ultrascaled Al-Ge-Al Nanowire Heterostructures.

    Science.gov (United States)

    Sistani, Masiar; Staudinger, Philipp; Greil, Johannes; Holzbauer, Martin; Detz, Hermann; Bertagnolli, Emmerich; Lugstein, Alois

    2017-08-09

    Conductance quantization at room temperature is a key requirement for the utilizing of ballistic transport for, e.g., high-performance, low-power dissipating transistors operating at the upper limit of "on"-state conductance or multivalued logic gates. So far, studying conductance quantization has been restricted to high-mobility materials at ultralow temperatures and requires sophisticated nanostructure formation techniques and precise lithography for contact formation. Utilizing a thermally induced exchange reaction between single-crystalline Ge nanowires and Al pads, we achieved monolithic Al-Ge-Al NW heterostructures with ultrasmall Ge segments contacted by self-aligned quasi one-dimensional crystalline Al leads. By integration in electrostatically modulated back-gated field-effect transistors, we demonstrate the first experimental observation of room temperature quantum ballistic transport in Ge, favorable for integration in complementary metal-oxide-semiconductor platform technology.

  16. Effects of hydrostatic pressure on the electron g|| factor and g-factor anisotropy in GaAs-(Ga, Al)As quantum wells under magnetic fields

    International Nuclear Information System (INIS)

    Porras-Montenegro, N; Duque, C A; Oliveira, L E; Reyes-Gomez, E

    2008-01-01

    The hydrostatic-pressure effects on the electron-effective Lande g || factor and g-factor anisotropy in semiconductor GaAs-Ga 1-x Al x As quantum wells under magnetic fields are studied. The g || factor is computed by considering the non-parabolicity and anisotropy of the conduction band through the Ogg-McCombe effective Hamiltonian, and numerical results are displayed as functions of the applied hydrostatic pressure, magnetic fields, and quantum-well widths. Good agreement between theoretical results and experimental measurements in GaAs-(Ga, Al)As quantum wells for the electron g factor and g-factor anisotropy at low values of the applied magnetic field and in the absence of hydrostatic pressure is obtained. Present results open up new possibilities for manipulating the electron-effective g factor in semiconductor heterostructures.

  17. Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices

    Science.gov (United States)

    2016-03-01

    ARL-TR-7618 ● MAR 2016 US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in...US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices by Blair C...Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

  18. Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction

    NARCIS (Netherlands)

    Kjaergaard, M.; Suominen, H. J.; Nowak, M.P.; Akhmerov, A.R.; Shabani, J.; Palmstrøm, C. J.; Nichele, F.; Marcus, C.M.

    2017-01-01

    Measurement of multiple Andreev Reflection (MAR) in a Josephson junction made from an InAs quantum well heterostructure with epitaxial aluminum is used to quantify a highly transparent effective semiconductor-superconductor interface with near-unity transmission. The observed temperature

  19. Local switching of two-dimensional superconductivity using the ferroelectric field effect

    Science.gov (United States)

    Takahashi, K. S.; Gabay, M.; Jaccard, D.; Shibuya, K.; Ohnishi, T.; Lippmaa, M.; Triscone, J.-M.

    2006-05-01

    Correlated oxides display a variety of extraordinary physical properties including high-temperature superconductivity and colossal magnetoresistance. In these materials, strong electronic correlations often lead to competing ground states that are sensitive to many parameters-in particular the doping level-so that complex phase diagrams are observed. A flexible way to explore the role of doping is to tune the electron or hole concentration with electric fields, as is done in standard semiconductor field effect transistors. Here we demonstrate a model oxide system based on high-quality heterostructures in which the ferroelectric field effect approach can be studied. We use a single-crystal film of the perovskite superconductor Nb-doped SrTiO3 as the superconducting channel and ferroelectric Pb(Zr,Ti)O3 as the gate oxide. Atomic force microscopy is used to locally reverse the ferroelectric polarization, thus inducing large resistivity and carrier modulations, resulting in a clear shift in the superconducting critical temperature. Field-induced switching from the normal state to the (zero resistance) superconducting state was achieved at a well-defined temperature. This unique system could lead to a field of research in which devices are realized by locally defining in the same material superconducting and normal regions with `perfect' interfaces, the interface being purely electronic. Using this approach, one could potentially design one-dimensional superconducting wires, superconducting rings and junctions, superconducting quantum interference devices (SQUIDs) or arrays of pinning centres.

  20. IZO deposited by PLD on flexible substrate for organic heterostructures

    Science.gov (United States)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Rasoga, O.; Stanculescu, F.; Socol, G.

    2017-05-01

    In:ZnO (IZO) thin films were deposited on flexible plastic substrates by pulsed laser deposition (PLD) method. The obtained layers present adequate optical and electrical properties competitive with those based on indium tin oxide (ITO). The figure of merit (9 × 10-3 Ω-1) calculated for IZO layers demonstrates that high quality coatings can be prepared by this deposition technique. A thermal annealing (150 °C for 1 h) or an oxygen plasma etching (6 mbar for 10 min.) were applied to the IZO layers to evaluate the influence of these treatments on the properties of the transparent coatings. Using vacuum evaporation, organic heterostructures based on cooper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on the untreated and treated IZO layers. The optical and electrical properties of the heterostructures were investigated by UV-Vis, FTIR and current-voltage ( I- V) measurements. For the heterostructure fabricated on IZO treated in oxygen plasma, an improvement in the current value with at least one order of magnitude was evidenced in the I- V characteristics recorded in dark conditions. Also, an increase in the current value for the heterostructure deposited on untreated IZO layer can be achieved by adding an organic layer such as tris-8-hydroxyquinoline aluminium (Alq3).

  1. Bandgap engineering and charge separation in two-dimensional GaS-based van der Waals heterostructures for photocatalytic water splitting

    Science.gov (United States)

    Wang, Biao; Kuang, Anlong; Luo, Xukai; Wang, Guangzhao; Yuan, Hongkuan; Chen, Hong

    2018-05-01

    Two-dimensional (2D) gallium sulfide (GaS), hexagonal boron nitride (h-BN) and graphitic carbon nitride (g-C3N4) have been fabricated and expected to be promising photocatalysts under ultraviolet irradiation. Here, we employ hybrid density functional calculations to explore the potential of the 2D GaS-based heterojunctions GaS/h-BN (g-C3N4) for the design of efficient water redox photocatalysts. Both heterostructures can be formed via van der Waals (vdW) interaction and are direct bandgap semiconductors, whose bandgaps are reduced comparing with isolated GaS, h-BN or g-C3N4 monolayers and whose bandedges straddle water redox potentials. Furthermore, the optical absorption of GaS/h-BN (g-C3N4) heterostructures is observably enhanced in the ultraviolet-visible (UV-vis) light range. The electron-hole pairs in GaS/h-BN (g-C3N4) heterostructures are completely separated from different layers. In addition, the in-plane biaxial strain can effectively modulate the electronic properties of GaS/h-BN (g-C3N4) heterostructures. Thus the GaS/h-BN (g-C3N4) heterostructures are anticipated to be promising candidates for photocatalytic water splitting to produce hydrogen.

  2. Photoluminescence and photocatalytic activities of Ag/ZnO metal-semiconductor heterostructure

    International Nuclear Information System (INIS)

    Sarma, Bikash; Deb, Sujit Kumar; Sarma, Bimal K.

    2016-01-01

    Present article focuses on the photocatalytic activities of ZnO nanorods and Ag/ZnO heterostructure deposited on polyethylene terephthalate (PET) substrate. ZnO nanorods are synthesized by thermal decomposition technique and Ag nanoparticles deposition is done by photo-deposition technique using UV light. X-ray diffraction studies reveal that the ZnO nanorods are of hexagonal wurtzite structure. Further, as-prepared samples are characterized by Scanning Electron Microscopy (SEM), Photoluminescence (PL) spectroscopy and UV-Vis spectroscopy. The surface plasmon resonance response of Ag/ZnO is found at 420 nm. The photocatalytic activities of the samples are evaluated by photocatalytic decolorization of methyl orange (MO) dye with UV irradiation. The degradation rate of MO increases with increase in irradiation time. The degradation of MO follows the first order kinetics. The photocatalytic activity of Ag/ZnO heterostructure is found to be more than that of ZnO nanorods. The PL intensity of ZnO nanorods is stronger than that of the Ag/ZnO heterostructure. The strong PL intensity indicates high recombination rate of photoinduced charge carriers which lowers the photocatalytic activity of ZnO nanorods. The charge carrier recombination is effectively suppressed by introducing Ag nanoparticles on the surface of the ZnO nanorods. This study demonstrates a strong relationship between PL intensity and photocatalytic activity. (paper)

  3. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  4. Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

    International Nuclear Information System (INIS)

    Anufriev, Roman; Chauvin, Nicolas; Bru-Chevallier, Catherine; Khmissi, Hammadi; Naji, Khalid; Gendry, Michel; Patriarche, Gilles

    2014-01-01

    We report on the evidence of a strain-induced piezoelectric field in wurtzite InAs/InP quantum rod nanowires. This electric field, caused by the lattice mismatch between InAs and InP, results in the quantum confined Stark effect and, as a consequence, affects the optical properties of the nanowire heterostructure. It is shown that the piezoelectric field can be screened by photogenerated carriers or removed by increasing temperature. Moreover, a dependence of the piezoelectric field on the quantum rod diameter is observed in agreement with simulations of wurtzite InAs/InP quantum rod nanowire heterostructures

  5. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.

    Science.gov (United States)

    Su, Jie; Feng, Liping; Zhang, Yan; Liu, Zhengtang

    2016-06-22

    Using first-principles calculations within density functional theory, we systematically studied the effect of BN-MoS2 heterostructure on the Schottky barriers of metal-MoS2 contacts. Two types of FETs are designed according to the area of the BN-MoS2 heterostructure. Results show that the vertical and lateral Schottky barriers in all the studied contacts, irrespective of the work function of the metal, are significantly reduced or even vanish when the BN-MoS2 heterostructure substitutes the monolayer MoS2. Only the n-type lateral Schottky barrier of Au/BN-MoS2 contact relates to the area of the BN-MoS2 heterostructure. Notably, the Pt-MoS2 contact with n-type character is transformed into a p-type contact upon substituting the monolayer MoS2 by a BN-MoS2 heterostructure. These changes of the contact natures are ascribed to the variation of Fermi level pinning, work function and charge distribution. Analysis demonstrates that the Fermi level pinning effects are significantly weakened for metal/BN-MoS2 contacts because no gap states dominated by MoS2 are formed, in contrast to those of metal-MoS2 contacts. Although additional BN layers reduce the interlayer interaction and the work function of the metal, the Schottky barriers of metal/BN-MoS2 contacts still do not obey the Schottky-Mott rule. Moreover, different from metal-MoS2 contacts, the charges transfer from electrodes to the monolayer MoS2, resulting in an increment of the work function of these metals in metal/BN-MoS2 contacts. These findings may prove to be instrumental in the future design of new MoS2-based FETs with ohmic contact or p-type character.

  6. Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

    International Nuclear Information System (INIS)

    Sata, Yohta; Moriya, Rai; Morikawa, Sei; Yabuki, Naoto; Masubuchi, Satoru; Machida, Tomoki

    2015-01-01

    We demonstrate a vertical field-effect transistor based on a graphene/MoSe 2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe 2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe 2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10 5 . These results point to the potential high performance of the graphene/MoSe 2 vdW heterostructure for electronics applications

  7. Study of interface properties in LaAlO{sub 3}/SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Thiel, Stefan Patrick

    2009-02-19

    Interface effects, which play a crucial role in semiconductors, are also important in oxides. Over the last years several oxide heterostructures were investigated with interface properties, which are not found in the bulk properties of the constituting materials. An exciting example is the interface between the two oxides Lanthanumaluminate (LAO) and Strontiumtitanate (STO) which was investigated in this work. Both materials are band-insulators, however a conducting layer can form at the interface, a so called quasi-two-dimensional electron gas (q2-DEG). After a brief introduction to this heterostructure the sample-preparation and characterization is described, and subsequently different projects are reported in detail. The investigation of the electronic transport properties as a function of the LAO film thickness revealed a transition from insulating to conducting behavior if the films exceed a critical thickness of 3 unit cells (uc). By electric field effect the conductivity of the interface can be tuned to a large extent. In samples with 3 uc of LAO a metal-insulator-transition can be induced. To be able to investigate defined structures a novel patterning technique was developed in the course of this thesis, which is based on the variation of the thickness of the epitaxial LAO. At 200 mK the q2-DEG condenses into a superconducting ground state. Investigations on bicrystalline samples reveal that the conducting interface is strongly influenced by dislocations in the STO substrate. (orig.)

  8. Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure

    Science.gov (United States)

    Heron, J. T.; Trassin, M.; Ashraf, K.; Gajek, M.; He, Q.; Yang, S. Y.; Nikonov, D. E.; Chu, Y.-H.; Salahuddin, S.; Ramesh, R.

    2011-11-01

    A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.

  9. Charge Transfer Effects in Naturally Occurring van der Waals Heterostructures (PbSe )1.16(TiSe2 )m (m =1 , 2)

    Science.gov (United States)

    Yao, Q.; Shen, D. W.; Wen, C. H. P.; Hua, C. Q.; Zhang, L. Q.; Wang, N. Z.; Niu, X. H.; Chen, Q. Y.; Dudin, P.; Lu, Y. H.; Zheng, Y.; Chen, X. H.; Wan, X. G.; Feng, D. L.

    2018-03-01

    van der Waals heterostructures (VDWHs) exhibit rich properties and thus has potential for applications, and charge transfer between different layers in a heterostructure often dominates its properties and device performance. It is thus critical to reveal and understand the charge transfer effects in VDWHs, for which electronic structure measurements have proven to be effective. Using angle-resolved photoemission spectroscopy, we studied the electronic structures of (PbSe )1.16(TiSe2 )m (m =1 , 2), which are naturally occurring VDWHs, and discovered several striking charge transfer effects. When the thickness of the TiSe2 layers is halved from m =2 to m =1 , the amount of charge transferred increases unexpectedly by more than 250%. This is accompanied by a dramatic drop in the electron-phonon interaction strength far beyond the prediction by first-principles calculations and, consequently, superconductivity only exists in the m =2 compound with strong electron-phonon interaction, albeit with lower carrier density. Furthermore, we found that the amount of charge transferred in both compounds is nearly halved when warmed from below 10 K to room temperature, due to the different thermal expansion coefficients of the constituent layers of these misfit compounds. These unprecedentedly large charge transfer effects might widely exist in VDWHs composed of metal-semiconductor contacts; thus, our results provide important insights for further understanding and applications of VDWHs.

  10. Ferroelastically and magnetically co-coupled resistive switching in Nd0.5Sr0.5MnO3/PMN-PT(011) multiferroic heterostructures

    Science.gov (United States)

    Zheng, Ming; Xu, Xiao-Ke; Ni, Hao; Qi, Ya-Ping; Li, Xiao-Min; Gao, Ju

    2018-03-01

    The phase separation, i.e., the competition between coexisting multi-phases, can be adjusted by external stimuli, such as magnetic field, electric field, current, light, and strain. Here, a multiferroic heterostructure composed of a charge-ordered Nd0.5Sr0.5MnO3 thin film and a ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystal is fabricated to investigate the lattice strain and magnetic field co-control of phase separation in resistive switching. The stable and nonvolatile resistance tuning is realized at room temperature using the electric-field-induced reversible ferroelastic strain effect, which can be enhanced by 84% under the magnetic field. Moreover, the magnetoresistance can be effectively tuned by the electrically driven ferroelastic strain. These findings reveal that the ferroelastic strain and the magnetic field strongly correlate with each other and are mediated by phase separation. Our work provides an approach to design strain-engineered multifunctional memory devices based on complex oxides by introducing an extra magnetic field stimulus.

  11. Thickness dependence of the triplet spin-valve effect in superconductor-ferromagnet heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Daniel; Zdravkov, Vladimir I.; Kehrle, Jan; Obermeier, Guenther; Krug von Nidda, Hans-Albrecht; Mueller, Claus; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Sidorenko, Anatolie S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Tagirov, Lenar [Solid State Physics Department, Kazan Federal University (Russian Federation)

    2015-07-01

    We investigated the triplet spin-valve effect in nanoscale layered S/F{sub 1}/N/F{sub 2}/AF heterostructures with varying F{sub 1}-layer thickness (where S=Nb is a singlet superconducting, F{sub 1}=Cu{sub 41}Ni{sub 59} and F{sub 2}=Co a ferromagnetic, and N a normal-conducting, non-magnetic layer). The theory predicts a long-range, odd-in-frequency triplet component of superconductivity at non-collinear alignment of the magnetizations of F{sub 1} and F{sub 2}. This triplet component exhausts the singlet state and, thus, lowers the superconducting transition temperature, T{sub c}, yielding a global minimum of T{sub c} close to the perpendicular mutual orientations of the magnetizations. We found an oscillating decay of T{sub c} suppression, due to the generation of the triplet component, with increasing F{sub 1} layer thickness, which we discuss in the framework of recent theories.

  12. Multiple scattering theory for superconducting heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ujfalussy, Balazs [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We generalize the screened Korringa-Kohn-Rostoker method for solving the corresponding Kohn-Sham-Bogoliubov-de Gennes equations for surfaces and interfaces. As an application of the theory, we study the quasiparticle spectrum of Au overlayers on a Nb(100) host. We find that within the superconducting gap region, the quasiparticle spectrum consists of Andreev bound states with a dispersion which is closely connected to the underlying electronic structure of the overlayer. We also find that the spectrum has a strongly k-dependent induced gap. The properties of the gap are discussed in relation to the thickness of the overlayer, and it is shown that certain states do not participate in the Andreev scattering process. From the thickness dependence of the gap size we calculate the superconducting critical temperature of Au/Nb(100) heterostructures what we compare with with experiments. Moreover, predictions are made for similar heterostructures of other compounds.

  13. Unidirectional Wave Propagation in Low-Symmetric Colloidal Photonic-Crystal Heterostructures

    Directory of Open Access Journals (Sweden)

    Vassilios Yannopapas

    2015-03-01

    Full Text Available We show theoretically that photonic crystals consisting of colloidal spheres exhibit unidirectional wave propagation and one-way frequency band gaps without breaking time-reversal symmetry via, e.g., the application of an external magnetic field or the use of nonlinear materials. Namely, photonic crystals with low symmetry such as the monoclinic crystal type considered here as well as with unit cells formed by the heterostructure of different photonic crystals show significant unidirectional electromagnetic response. In particular, we show that the use of scatterers with low refractive-index contrast favors the formation of unidirectional frequency gaps which is the optimal route for achieving unidirectional wave propagation.

  14. Unidirectional Wave Propagation in Low-Symmetric Colloidal Photonic-Crystal Heterostructures.

    Science.gov (United States)

    Yannopapas, Vassilios

    2015-03-19

    We show theoretically that photonic crystals consisting of colloidal spheres exhibit unidirectional wave propagation and one-way frequency band gaps without breaking time-reversal symmetry via, e.g., the application of an external magnetic field or the use of nonlinear materials. Namely, photonic crystals with low symmetry such as the monoclinic crystal type considered here as well as with unit cells formed by the heterostructure of different photonic crystals show significant unidirectional electromagnetic response. In particular, we show that the use of scatterers with low refractive-index contrast favors the formation of unidirectional frequency gaps which is the optimal route for achieving unidirectional wave propagation.

  15. High-efficiency super capacitors based on hetero-structured α-MnO{sub 2} nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Ghouri, Zafar Khan [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shaheer Akhtar, M. [New & Renewable Energy Material Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of); Zahoor, Awan [Department of Chemical Engineering, NED University of Engineering & Technology, University Road, Karachi 75270 (Pakistan); Barakat, Nasser A.M., E-mail: nasser@jbnu.ac.kr [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Chemical Engineering, Faculty of Engineering, El-Minia University, El-Minia (Egypt); Han, Weidong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Park, Mira [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kim, Hak Yong, E-mail: khy@jbnu.ac.kr [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2015-09-05

    Highlights: • Hetero-structured α-MnO{sub 2} nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg{sup −1} with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO{sub 2}) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO{sub 2} nanorods. Supercapacitive performance of the hetero-structured α-MnO{sub 2} nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO{sub 2} hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO{sub 6}] structure yield a significantly high specific capacitance of 298 Fg{sup −1} at 5 mV s{sup −1} and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO{sub 2} electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport.

  16. Building novel Ag/CeO2 heterostructure for enhancing photocatalytic activity

    International Nuclear Information System (INIS)

    Leng, Qiang; Yang, Dezhi; Yang, Qi; Hu, Chenguo; Kang, Yue; Wang, Mingjun; Hashim, Muhammad

    2015-01-01

    Highlights: • Ag nanoparticle is designed to building Schottky heterojunction on CeO 2 nanocube. • The photocatalytic activity of Ag/CeO 2 heterostructure is much enhanced. • 95.33% of MB can be effectively degraded within half an hour. • Ag as acceptor of photoelectrons blocks the recombination of electron–hole pairs. - Abstract: Stable and recyclable photocatalysts with high efficiency to degrade organic contamination are important and widely demanded under the threat of the environment pollution. Ag/CeO 2 heterostructure is designed as a photocatalyst to degrade organic dye under the simulated sunlight. The catalytic activity of CeO 2 nanocubes (NCs) to degrade methylene blue (MB) is obviously enhanced when Ag nanoparticles (NPs) are deposited on the surface of them. The weight ratio of Ag and CeO 2 in forming high efficiency catalyst, the amount of Ag/CeO 2 catalyst used in degradation process, and the dye concentration and pH value of the initial MB solution are examined systematically. 95.33% of MB can be effectively degraded within half an hour when 50 mg of Ag/CeO 2 catalyst in an optimal weight ratio of 1:3, is added to the 100 mL of MB solution (c 0 = 1 × 10 −5 mol L −1 , pH 6.2). The mechanism of the enhanced catalytic activity of Ag/CeO 2 heterostructure is discussed. The photocatalytic degradation rate is found to obey pseudo-first-order kinetics equations according to Langmuir–Hinshelwood model. The intermediate products in different stages during the degradation of MB are analyzed

  17. Omnidirectional reflection in one-dimensional ternary photonic crystals and photonic heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shiqi [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631 (China); Yang, Xiangbo, E-mail: 20001038@m.scnu.edu.cn [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631 (China); School of Physical Education and Sports Science, South China Normal University, Guangzhou 510006 (China); Liu, Chengyi Timon [School of Physical Education and Sports Science, South China Normal University, Guangzhou 510006 (China)

    2014-03-01

    Designing dielectric systems to create omnidirectional band gaps (OBGs) is an attractive topic in the field of photonic band gap (PBG) structures. In this Letter, we propose a new approach to create OBGs by ternary photonic heterostructures (TPHs) composed of three kinds of materials with different refractive indices and obtain the formulae of the structures of TPHs, i.e., those of the thicknesses of materials and the number of sub-ternary photonic crystals. It may provide a powerful technique for designing the structures being able to produce OBGs by use of usual materials, lowcost materials, and materials with low refractive indices, etc.

  18. Omnidirectional reflection in one-dimensional ternary photonic crystals and photonic heterostructures

    International Nuclear Information System (INIS)

    Wang, Shiqi; Yang, Xiangbo; Liu, Chengyi Timon

    2014-01-01

    Designing dielectric systems to create omnidirectional band gaps (OBGs) is an attractive topic in the field of photonic band gap (PBG) structures. In this Letter, we propose a new approach to create OBGs by ternary photonic heterostructures (TPHs) composed of three kinds of materials with different refractive indices and obtain the formulae of the structures of TPHs, i.e., those of the thicknesses of materials and the number of sub-ternary photonic crystals. It may provide a powerful technique for designing the structures being able to produce OBGs by use of usual materials, lowcost materials, and materials with low refractive indices, etc.

  19. Octahedral rotations in strained LaAlO3/SrTiO3 (001 heterostructures

    Directory of Open Access Journals (Sweden)

    T. T. Fister

    2014-02-01

    Full Text Available Many complex oxides display an array of structural instabilities often tied to altered electronic behavior. For oxide heterostructures, several different interfacial effects can dramatically change the nature of these instabilities. Here, we investigate LaAlO3/SrTiO3 (001 heterostructures using synchrotron x-ray scattering. We find that when cooling from high temperature, LaAlO3 transforms from the Pm3¯m to the Imma phase due to strain. Furthermore, the first 4 unit cells of the film adjacent to the substrate exhibit a gradient in rotation angle that can couple with polar displacements in films thinner than that necessary for 2D electron gas formation.

  20. k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

    OpenAIRE

    Lev, L. L.; Maiboroda, I. O.; Husanu, M. -A.; Grichuk, E. S.; Chumakov, N. K.; Ezubchenko, I. S.; Chernykh, I. A.; Wang, X.; Tobler, B.; Schmitt, T.; Zanaveskin, M. L.; Valeyev, V. G.; Strocov, V. N.

    2018-01-01

    Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ult...

  1. Observation of the i = 1/2 fractional quantum Hall plateau in AlGaAs/GaAs/AlGaAs selectively doped double heterostructures

    International Nuclear Information System (INIS)

    Lindelof, P.E.; Bruus, H.; Taboryski, R.; Soerensen, C.B.

    1989-01-01

    An inverted and a normal GaAs/AlGaAs interface grown back to back in a socalled selectively doped double heterostructure (SD DH) has been studied in magnetic fields up to 12 tesla and at temperatures down to 0.3 K. The longitudinal resistance goes to zero at minima of the Shubnikov-de Haas oscillations. The Hall resistivity is found to exhibit the quantum Hall effect. By etching the surface of the double heterostructure wafer we create an unbalance in the density of electrons in the two parallel two-dimensional electronic sheets. Although we in this way create only a modest change in the electron densities, we observe a significant change in the Shubnikov-de Haas oscillations, which can be interpreted as a beat between the oscillations of two electron layers with different densities. At the same time we observe a significant variation of the width of the quantum Hall steps. The most astonishing feature of our results is a clear quantum Hall plateou at 1/2 filling in each of the two parallel layers observed at temperatures below 1 K at a magnetic field above 10 T. Weak localization was also studied and such experiments are consistent with two parallel and independent two-dimensional electronic layers. (orig.)

  2. Heterostructured Fe3O4/Bi2O2CO3 photocatalyst: Synthesis, characterization and application in recyclable photodegradation of organic dyes under visible light irradiation

    International Nuclear Information System (INIS)

    Zhu, Gangqiang; Hojamberdiev, Mirabbos; Katsumata, Ken-ichi; Cai, Xu; Matsushita, Nobuhiro; Okada, Kiyoshi; Liu, Peng; Zhou, Jianping

    2013-01-01

    Heterostructured Fe 3 O 4 /Bi 2 O 2 CO 3 photocatalyst was synthesized by a two-step method. First, Fe 3 O 4 nanoparticles with the size of ca. 10 nm were synthesized by chemical method at room temperature and then heterostructured Fe 3 O 4 /Bi 2 O 2 CO 3 photocatalyst was synthesized by hydrothermal method at 180 °C for 24 h with the addition of 10 wt% Fe 3 O 4 nanoparticles into the precursor suspension of Bi 2 O 2 CO 3 . The pH value of synthesis suspension was adjusted to 4 and 6 with the addition of 2 M NaOH aqueous solution. By controlling the pH of synthesis suspension at 4 and 6, sphere- and flower-like Fe 3 O 4 /Bi 2 O 2 CO 3 photocatalysts were obtained, respectively. Both photocatalysts demonstrate superparamagnetic behavior at room temperature. The UV–vis diffuse reflectance spectra of the photocatalysts confirm that all the heterostructured photocatalysts are responsive to visible light. The photocatalytic activity of the heterostructured photocatalysts was evaluated for the degradation of methylene blue (MB) and methyl orange (MO) in aqueous solution over the photocatalysts under visible light irradiation. The heterostructured photocatalysts prepared in this study exhibit highly efficient visible-light-driven photocatalytic activity for the degradation of MB and MO, and they can be easily recovered by applying an external magnetic field. - Highlights: • Sphere- and flower-like Fe 3 O 4 /Bi 2 O 2 CO 3 was synthesized by hydrothermal method. • Fe 3 O 4 nanoparticles with the size of ca. 10 nm were synthesized by chemical method. • Photocatalysts demonstrate superparamagnetic behavior at room temperature. • Photocatalysts exhibit highly efficient visible-light-driven photocatalytic activity. • Photocatalysts can be easily recovered by applying an external magnetic field

  3. Clarifying roughness and atomic diffusion contributions to the interface broadening in exchange-biased NiFe/FeMn/NiFe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Nascimento, V.P., E-mail: valberpn@yahoo.com.br [Departamento de Física, Universidade Federal do Espírito Santo, 29075-910 Vitória (Brazil); Merino, I.L.C.; Passamani, E.C. [Departamento de Física, Universidade Federal do Espírito Santo, 29075-910 Vitória (Brazil); Alayo, W. [Departamento de Física, Universidade de Pelotas, 96010-610 Pelotas (Brazil); Tafur, M. [Instituto de Ciências Exatas, Universidade Federal de Itajubá, 37500-903 Itajubá (Brazil); Pelegrini, F. [Instituto de Física, Universidade Federal de Goiás, 74001-970 Goiânia (Brazil); Magalhães-Paniago, R. [Universidade Federal de Minas Gerais, Belo Horizonte (Brazil); Alvarenga, A.D. [Instituto Nacional de Metrologia, 25250-020 Xerém (Brazil); Saitovitch, E.B. [Coordenação de Física Experimental e Baixas Energias, Centro Brasileiro de Pesquisas Físicas, 22290-180 Rio de Janeiro (Brazil)

    2013-09-02

    NiFe(30 nm)/FeMn(13 nm)/NiFe(10 nm) heterostructures prepared by magnetron sputtering at different argon working pressures (0.27, 0.67 and 1.33 Pa) were systematically investigated by using specular and off-specular diffuse X-ray scattering experiments, combined with ferromagnetic resonance technique, in order to distinguish the contribution from roughness and atomic diffusion to the total structural disorder at NiFe/FeMn interfaces. It was shown that an increase in the working gas pressure from 0.27 to 1.33 Pa causes an enhancement of the atomic diffusion at the NiFe/FeMn interfaces, an effect more pronounced at the top FeMn/NiFe interface. In particular, this atomic diffusion provokes a formation of non-uniform magnetic dead-layers at the NiFe/FeMn interfaces (NiFeMn regions with paramagnetic or weak antiferromagnetic properties); that are responsible for the substantial reduction of the exchange bias field in the NiFe/FeMn system. Thus, this work generically helps to understand the discrepancies found in the literature regarding the influence of the interface broadening on the exchange bias properties (e.g., exchange bias field) of the NiFe/FeMn system. - Highlights: • Roughness and atomic diffusion contributions to the interface broadening • Clarification of the exchange bias field dependence on the interface disorder • Ferromagnetic, paramagnetic and antiferromagnetic phases at the magnetic interface • Magnetic dead layers formed by increasing the argon work pressure • Atomic diffusion in heterostructures prepared at higher argon pressure.

  4. Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

    Science.gov (United States)

    Maji, Nilay; Kar, Uddipta; Nath, T. K.

    2018-02-01

    The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

  5. Scattering times in the two-dimensional electron gas of AlxGa1-xN/AlN/GaN heterostructures

    International Nuclear Information System (INIS)

    Han Xiuxun; Honda, Yoshio; Narita, Tetsuo; Yamaguchi, Masahito; Sawaki, Nobuhiko; Tanaka, Tooru; Guo Qixin; Nishio, Mitsushiro

    2009-01-01

    Low-field Hall and Shubnikov-de Haas (SdH) measurements were performed on two-dimensional electron gas of Al 0.24 Ga 0.76 N/GaN and Al 0.24 Ga 0.76 N/AlN/GaN heterostructures at a low temperature. A dramatic improvement in electron mobility is observed in Al 0.24 Ga 0.76 N/AlN/GaN heterostructures with 1 and 2 nm thick AlN interlayers. A further increase in the AlN thickness degrades the transport behaviour. Transport and quantum scattering times were derived from the corresponding Hall mobility and the oscillatory part of the SdH signal. The ratio of the transport scattering time and the quantum scattering time increases from 3.87 in the heterostructure without the AlN interlayer to 14.34 with the 1 nm AlN interlayer and to 12.45 with the 2 nm AlN interlayer. A modified scattering calculation due to charged dislocation with a finite length suggests that dislocation related long-range scattering event tends to dominate both transport and quantum scattering times when a thin AlN interlayer is introduced.

  6. 2D halide perovskite-based van der Waals heterostructures: contact evaluation and performance modulation

    Science.gov (United States)

    Guo, Yaguang; Saidi, Wissam A.; Wang, Qian

    2017-09-01

    Halide perovskites and van der Waals (vdW) heterostructures are both of current interest owing to their novel properties and potential applications in nano-devices. Here, we show the great potential of 2D halide perovskite sheets (C4H9NH3)2PbX4 (X  =  Cl, Br and I) that were synthesized recently (Dou et al 2015 Science 349 1518-21) as the channel materials contacting with graphene and other 2D metallic sheets to form van der Waals heterostructures for field effect transistor (FET). Based on state-of-the-art theoretical simulations, we show that the intrinsic properties of the 2D halide perovskites are preserved in the heterojunction, which is different from the conventional contact with metal surfaces. The 2D halide perovskites form a p-type Schottky barrier (Φh) contact with graphene, where tunneling barrier exists, and a negative band bending occurs at the lateral interface. We demonstrate that the Schottky barrier can be turned from p-type to n-type by doping graphene with nitrogen atoms, and a low-Φh or an Ohmic contact can be realized by doping graphene with boron atoms or replacing graphene with other high-work-function 2D metallic sheets such as ZT-MoS2, ZT-MoSe2 and H-NbS2. This study not only predicts a 2D halide perovskite-based FETs, but also enhances the understanding of tuning Schottky barrier height in device applications.

  7. Superconducting cuprate heterostructures for hot electron bolometers

    Science.gov (United States)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  8. Superconducting cuprate heterostructures for hot electron bolometers

    International Nuclear Information System (INIS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-01-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La 2−x Sr x CuO 4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI 3 , with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g e−ph ≈1 W/K cm 2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity

  9. NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

    Science.gov (United States)

    Wang, Zhan; Xie, Yong; Wang, Haolin; Wu, Ruixue; Nan, Tang; Zhan, Yongjie; Sun, Jing; Jiang, Teng; Zhao, Ying; Lei, Yimin; Yang, Mei; Wang, Weidong; Zhu, Qing; Ma, Xiaohua; Hao, Yue

    2017-08-01

    Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication of in-plane lateral heterostructures between TMDs has opened up excellent opportunities for engineering two-dimensional materials. The creation of high quality heterostructures with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate a one-step growth method for the construction of high-quality MoS2-WS2 in-plane heterostructures. The synthesis was carried out using ambient pressure chemical vapor deposition (APCVD) with the assistance of sodium chloride (NaCl). It was found that the addition of NaCl played a key role in lowering the growth temperatures, in which the Na-containing precursors could be formed and condensed on the substrates to reduce the energy of the reaction. As a result, the growth regimes of MoS2 and WS2 are better matched, leading to the formation of in-plane heterostructures in a single step. The heterostructures were proved to be of high quality with a sharp and clear interface. This newly developed strategy with the assistance of NaCl is promising for synthesizing other TMDs and their heterostructures.

  10. New approach to local anodic oxidation of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Martaus, Jozef; Gregusova, Dagmar; Cambel, Vladimir; Kudela, Robert; Soltys, Jan

    2008-01-01

    We have experimentally explored a new approach to local anodic oxidation (LAO) of a semiconductor heterostructures by means of atomic force microscopy (AFM). We have applied LAO to an InGaP/AlGaAs/GaAs heterostructure. Although LAO is usually applied to oxidize GaAs/AlGaAs/GaAs-based heterostructures, the use of the InGaP/AlGaAs/GaAs system is more advantageous. The difference lies in the use of different cap layer materials: Unlike GaAs, InGaP acts like a barrier material with respect to the underlying AlGaAs layer and has almost one order of magnitude lower density of surface states than GaAs. Consequently, the InGaP/AlGaAs/GaAs heterostructure had the remote Si-δ doping layer only 6.5 nm beneath the surface and the two-dimensional electron gas (2DEG) was confined only 23.5 nm beneath the surface. Moreover, InGaP unaffected by LAO is a very durable material in various etchants and allows us to repeatedly remove thin portions of the underlying AlGaAs layer via wet etching. This approach influences LAO technology fundamentally: LAO was used only to oxidize InGaP cap layer to define very narrow (∼50 nm) patterns. Subsequent wet etching was used to form very narrow and high-energy barriers in the 2DEG patterns. This new approach is promising for the development of future nano-devices operated both at low and high temperatures

  11. Tunable electronic properties of silicene/GaP heterobilayer: Effects of electric field or biaxial tensile strain

    Science.gov (United States)

    Zhang, Peng; Yang, Xibin; Wu, Wei; Tian, Lifen; Cui, Heping; Zheng, Kai; Jiang, Junke; Chen, Xianping; Ye, Huaiyu

    2018-05-01

    We systematically investigate the electronic properties the two-dimensional (2D) silicene/GaP heterobilayer by using density functional theory calculations. We find the silicene and GaP monolayer are bounded to each other via orbital hybridization, and the charge redistribution occurring at the silicene/GaP interface leads to the opening of a direct energy band gap of about 0.997 eV in silicene. Importantly, by applying external electric field, the band structure of silicene/GaP heterostructure can be effectively modulated, and a semiconductor-metal transition even emerges. These intriguing properties make the silicene/GaP heterobilayer a promising 2D material for future electronics and strain sensors.

  12. Vertical heterostructures of MoS2 and graphene nanoribbons grown by two-step chemical vapor deposition for high-gain photodetectors.

    Science.gov (United States)

    Yunus, Rozan Mohamad; Endo, Hiroko; Tsuji, Masaharu; Ago, Hiroki

    2015-10-14

    Heterostructures of two-dimensional (2D) layered materials have attracted growing interest due to their unique properties and possible applications in electronics, photonics, and energy. Reduction of the dimensionality from 2D to one-dimensional (1D), such as graphene nanoribbons (GNRs), is also interesting due to the electron confinement effect and unique edge effects. Here, we demonstrate a bottom-up approach to grow vertical heterostructures of MoS2 and GNRs by a two-step chemical vapor deposition (CVD) method. Single-layer GNRs were first grown by ambient pressure CVD on an epitaxial Cu(100) film, followed by the second CVD process to grow MoS2 over the GNRs. The MoS2 layer was found to grow preferentially on the GNR surface, while the coverage could be further tuned by adjusting the growth conditions. The MoS2/GNR nanostructures show clear photosensitivity to visible light with an optical response much higher than that of a 2D MoS2/graphene heterostructure. The ability to grow a novel 1D heterostructure of layered materials by a bottom-up CVD approach will open up a new avenue to expand the dimensionality of the material synthesis and applications.

  13. Synthesis and their enhanced photoelectrochemical performance of ZnO nanoparticle-loaded CuO dandelion heterostructures under solar light

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Guanying; Du, Bin; Liu, Lei; Zhang, Weiwei; Liang, Yujie; Shi, Honglong; Wang, Wenzhong, E-mail: wzhwangmuc@163.com

    2017-03-31

    Highlights: • ZnO/CuO nanoparticle/dandelion heterostructures were fabricated for the first time. • ZnO/CuO nanoparticle/dandelion heterostructures show enhanced PEC activity. • ZnO nanoparticle loading contents have significant effect on PEC water splitting. • Interaction, charge transfer and enhanced mechanism of photocatalyst were proposed. • p-n junction drives the photoexcited charges efficient separation. - Abstract: Here we report an easy and large-scale synthesis of three-dimensional (3D) ZnO nanoparticle-loaded CuO dandelion (denoted as n-ZnO/p-CuO nanoparticle/dandelion) heterostructures and their photoelectrochemical (PEC) water splitting under simulated solar light illumination. CuO dandelions were fabricated by a facile and cost-effective chemical strategy, in which the ribbon-like CuO nanoplates were first formed and then assembled into dandelion-like architectures. ZnO nanoparticle-loaded CuO dandelion heterostructures were fabricated by calcining Zn(Ac){sub 2}-loaded CuO dandelions. High resolution transmission electron microscope (HRTEM) studies demonstrate that intimate p-n junction is built between p-CuO and n-ZnO interface. The n-ZnO/p-CuO nanoparticle/dandelion photoelectrodes exhibit significant improvement in PEC water splitting to CuO dandelion photoelectrodes. The correlation between photocurrents and different loading contents of ZnO nanoparticles (NPs) is studied in which the n-ZnO/p-CuO nanoparticle/dandelion heterostructures with loading 4.6 wt% ZnO NPs show higher photocathodic current. The efficient separation of the photogenerated electrons and holes driven by the intimate p-n junction between p-type CuO and n-type ZnO interface is mainly contributed to the enhanced photoanode current. The achieved results in the present study offer a very useful strategy for designing p-n junction photoelectrodes for efficiency and low-cost PEC cells for clean solar hydrogen production.

  14. Photocatalytic activity of Ag3PO4 nanoparticle/TiO2 nanobelt heterostructures

    Science.gov (United States)

    Liu, Ruoyu; Hu, Peiguang; Chen, Shaowei

    2012-10-01

    Heterostructures based on Ag3PO4 nanoparticles and TiO2 nanobelts were prepared by a coprecipitation method. The crystalline structures were characterized by X-ray diffraction measurements. Electron microscopic studies showed that the Ag3PO4 nanoparticles and TiO2 nanobelts were in intimate contact which might be exploited to facilitate charge transfer between the two semiconductor materials. In fact, the heterostructures exhibited markedly enhanced photocatalytic activity as compared with unmodified TiO2 nanobelts or commercial TiO2 colloids in the photodegradation of methyl orange under UV irradiation. This was accounted for by the improved efficiency of interfacial charge separation thanks to the unique alignments of their band structures. Remarkably, whereas the photocatalytic activity of the heterostructure was comparable to that of Ag3PO4 nanoparticles alone, the heterostructures exhibited significantly better stability and reusability in repeated tests than the Ag3PO4 nanoparticles.

  15. Organic p-n heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  16. Realization of the Axion Insulator State in Quantum Anomalous Hall Sandwich Heterostructures

    Science.gov (United States)

    Xiao, Di; Jiang, Jue; Shin, Jae-Ho; Wang, Wenbo; Wang, Fei; Zhao, Yi-Fan; Liu, Chaoxing; Wu, Weida; Chan, Moses H. W.; Samarth, Nitin; Chang, Cui-Zu

    2018-02-01

    The "magnetoelectric effect" arises from the coupling between magnetic and electric properties in materials. The Z2 invariant of topological insulators (TIs) leads to a quantized version of this phenomenon, known as the topological magnetoelectric (TME) effect. This effect can be realized in a new topological phase called an "axion insulator" whose surface states are all gapped but the interior still obeys time reversal symmetry. We demonstrate such a phase using electrical transport measurements in a quantum anomalous Hall (QAH) sandwich heterostructure, in which two compositionally different magnetic TI layers are separated by an undoped TI layer. Magnetic force microscopy images of the same sample reveal sequential magnetization reversals of the top and bottom layers at different coercive fields, a consequence of the weak interlayer exchange coupling due to the spacer. When the magnetization is antiparallel, both the Hall resistance and Hall conductance show zero plateaus, accompanied by a large longitudinal resistance and vanishing longitudinal conductance, indicating the realization of an axion insulator state. Our findings thus show evidence for a phase of matter distinct from the established QAH state and provide a promising platform for the realization of the TME effect.

  17. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala; Alshareef, Husam N.; Schwingenschlö gl, Udo

    2016-01-01

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical

  18. Quantitative characterization of spin-orbit torques in Pt/Co/Pt/Co/Ta/BTO heterostructures due to the magnetization azimuthal angle dependence

    Science.gov (United States)

    Engel, Christian; Goolaup, Sarjoosing; Luo, Feilong; Lew, Wen Siang

    2017-08-01

    Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT effective field dependence on the out-of-plane magnetization angle has been relatively extensive, the understanding of in-plane magnetization angle dependence remains unknown. Here, we analytically propose a method to compute the SOT effective fields as a function of the in-plane magnetization angle using the harmonic Hall technique in perpendicular magnetic anisotropy (PMA) structures. Two different samples with PMA, a Pt /Co /Pt /Co /Ta /BaTi O3 (BTO) test sample and a Pt/Co/Pt/Co/Ta reference sample, are studied using the derived formula. Our measurements reveal that only the dampinglike field of the test sample with a BTO capping layer exhibits an in-plane magnetization angle dependence, while no angular dependence is found in the reference sample. The presence of the BTO layer in the test sample, which gives rise to a Rashba effect at the interface, is ascribed as the source of the angular dependence of the dampinglike field.

  19. Uniform photoresponse in thermally oxidized Ni and MoS2 heterostructures

    International Nuclear Information System (INIS)

    Luo, Wei; Peng, Gang; Wang, Fei; Miao, Feng; Zhang, Xue-Ao; Qin, Shiqiao

    2017-01-01

    Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS 2 ) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO x layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS 2 /NiO x /Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Graphene/black phosphorus heterostructured photodetector

    Science.gov (United States)

    Xu, Jiao; Song, Young Jae; Park, Jin-Hong; Lee, Sungjoo

    2018-06-01

    Graphene photodetectors exhibit a low photoresponsivity due to their weak light absorbance. In this study, we fabricated a graphene/black phosphorus (BP) heterostructure, in which the multilayer BP flake with a ∼0.3 eV direct band gap functions as an enhanced light-absorption material. Further, the photoexcited electrons are trapped in the trap states of the BP, which creates a photogating effect and causes holes to flow into the graphene layer driven by the built-in potential between BP and graphene. The photocarrier lifetime is therefore prolonged by trapping, and as a result of the high carrier mobility of graphene, the holes that transfer into the graphene channel can travel through the circuit before they recombine with trapped electrons. These combined effects result in a high photoresponsivity: 55.75 A/W at λ = 655 nm, 1.82 A/W at λ = 785 nm, and 0.66 A/W at λ = 980 nm.

  1. Structure, chemical bonding states, and optical properties of the hetero-structured ZnO/CuO prepared by using the hydrothermal and the electrospinning methods

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Kyong-Soo; Kim, Jong Wook; Bae, Jong-Seong; Hong, Tae Eun; Jeong, Euh Duck; Jin, Jong Sung; Ha, Myoung Gyu; Kim, Jong-Pil, E-mail: jpkim@kbsi.re.kr

    2017-01-01

    ZnO-branched nanostructures have recently attracted considerable attention due to their rich architectures and promising applications in the field of optoelectronics. Contrary to n-type semiconducting metal oxides, cupric oxide is a p-type semiconductor which can be applied to high-critical-temperature superconductors, photovoltaic materials, field emission, and catalysis. We report the synthesis of the ZnO nanorods on the CuO nanofibers prepared by using the electrospinning method along with the hydrothermal method. As the growing time increases, emission spectra of the hetero-structured ZnO/CuO show that the observed band in the UV region is slightly increased, while the intensity of the green emission is highly enhanced. The hetero-structured ZnO/CuO is found to be a promising candidate for developing renewable devices with photoluminescent behavior and the increased surface to volume ratio.

  2. Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures

    Directory of Open Access Journals (Sweden)

    Jacky Even

    2014-01-01

    Full Text Available Potentialities of density functional theory (DFT based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of semiconductor hybrid organic-inorganic perovskites and GaAs/GaP heterostructures. They show how the properties of these bulk materials, as well as atomistic relaxations, interfaces, and electronic band-lineups in small heterostructures, can be thoroughly investigated. Some limitations of available standard DFT codes are discussed. Recent improvements able to treat many-body effects or based on density-functional perturbation theory are also reviewed in the context of issues relevant to photovoltaic technologies.

  3. Synthesis and photoluminescence properties of comb-like CdS nanobelt/ZnO nanorod heterostructures

    International Nuclear Information System (INIS)

    Lan Changyong; Gong Jiangfeng; Liu Chunming

    2012-01-01

    Highlights: ► Comb-like CdS nanobelt/ZnO nanorod heterostructures were synthesized. ► ZnO nanorods epitaxially grew on the (1 0 0) surface of the CdS nanobelts along [1 0 0]. ► A preliminary growth mechanism was proposed. - Abstract: Comb-like CdS nanobelt/ZnO nanorod heterostructures were synthesized by a two-stage method. X-ray diffractometer, scanning electron microscopy, transmission electron microscopy were used to characterize and analyze the as-synthesized products. The results demonstrate that the CdS nanobelt backbones grow along [2 1 0] and the ZnO nanorod branches epitaxially grow on the (0 0 1) surface of the CdS nanobelt with a growth direction of [0 0 1]. The as-prepared heterostructures exhibit an important feature of single-crystallinity. At room temperature, the comb-like CdS nanobelt/ZnO nanorod heterostructures show strong green emission.

  4. Enhancing mid-infrared spectral response at the LaAlO3/SrTiO3 interface by magnetic field

    International Nuclear Information System (INIS)

    Feng, Xin; Zhao, Kun; Xi, Jian-Feng; Xiang, Wen-Feng; Lu, Zhi-Qing; Sun, Qi; Wu, Shi-Xiang; Ni, Hao

    2014-01-01

    Many unexpected properties have been found in the LaAlO 3 /SrTiO 3 heterostructure, but the interaction of the many ground states at its interface remains unclear. Here, we demonstrate an optical property of this n-type heterostructure where the mid-infrared spectral responsivity at the interface is enhanced by an external magnetic field. The field intensity ranged from 0.8 to 6 kOe at a low temperature (19 K) as measured with our spectral response measurement system. Two spectral peaks related to the spin-orbit coupling effect were also observed at wavelengths 2400 nm and 3700 nm. The intriguing phenomena relate to changes in the crystallographic structure and subband structure at the interface

  5. Building novel Ag/CeO{sub 2} heterostructure for enhancing photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Leng, Qiang; Yang, Dezhi; Yang, Qi [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Hu, Chenguo, E-mail: hucg@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Kang, Yue; Wang, Mingjun [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Hashim, Muhammad [Department of Applied Physics, Chongqing University, Chongqing 400044 (China); Applied Physics Department, Federal Urdu University of Arts Science and Technology, Islamabad (Pakistan)

    2015-05-15

    Highlights: • Ag nanoparticle is designed to building Schottky heterojunction on CeO{sub 2} nanocube. • The photocatalytic activity of Ag/CeO{sub 2} heterostructure is much enhanced. • 95.33% of MB can be effectively degraded within half an hour. • Ag as acceptor of photoelectrons blocks the recombination of electron–hole pairs. - Abstract: Stable and recyclable photocatalysts with high efficiency to degrade organic contamination are important and widely demanded under the threat of the environment pollution. Ag/CeO{sub 2} heterostructure is designed as a photocatalyst to degrade organic dye under the simulated sunlight. The catalytic activity of CeO{sub 2} nanocubes (NCs) to degrade methylene blue (MB) is obviously enhanced when Ag nanoparticles (NPs) are deposited on the surface of them. The weight ratio of Ag and CeO{sub 2} in forming high efficiency catalyst, the amount of Ag/CeO{sub 2} catalyst used in degradation process, and the dye concentration and pH value of the initial MB solution are examined systematically. 95.33% of MB can be effectively degraded within half an hour when 50 mg of Ag/CeO{sub 2} catalyst in an optimal weight ratio of 1:3, is added to the 100 mL of MB solution (c{sub 0} = 1 × 10{sup −5} mol L{sup −1}, pH 6.2). The mechanism of the enhanced catalytic activity of Ag/CeO{sub 2} heterostructure is discussed. The photocatalytic degradation rate is found to obey pseudo-first-order kinetics equations according to Langmuir–Hinshelwood model. The intermediate products in different stages during the degradation of MB are analyzed.

  6. Tunable intraparticle frameworks for creating complex heterostructured nanoparticle libraries

    Science.gov (United States)

    Fenton, Julie L.; Steimle, Benjamin C.; Schaak, Raymond E.

    2018-05-01

    Complex heterostructured nanoparticles with precisely defined materials and interfaces are important for many applications. However, rationally incorporating such features into nanoparticles with rigorous morphology control remains a synthetic bottleneck. We define a modular divergent synthesis strategy that progressively transforms simple nanoparticle synthons into increasingly sophisticated products. We introduce a series of tunable interfaces into zero-, one-, and two-dimensional copper sulfide nanoparticles using cation exchange reactions. Subsequent manipulation of these intraparticle frameworks yielded a library of 47 distinct heterostructured metal sulfide derivatives, including particles that contain asymmetric, patchy, porous, and sculpted nanoarchitectures. This generalizable mix-and-match strategy provides predictable retrosynthetic pathways to complex nanoparticle features that are otherwise inaccessible.

  7. Influence of Au Nanoparticle Shape on Au@Cu2O Heterostructures

    OpenAIRE

    Zhu, Jie; Lu, Na; Chen, Wei; Kong, Lina; Yang, Yun; Ma, Dekun; Huang, Shaoming

    2015-01-01

    Synthesis of metal-semiconductor heterostructures may allow the combination of function of the corresponding components and/or the enhanced performance resulting from the interactions between all the components. In this paper, Au@Cu2O core-shell heterostructures are prepared by a seed-growth method, using different-shaped Au nanocrystals as the seeds such as nanorods, octahedra, decahedra, dots, and nanocubes. The results revealed that the final structure of Au@Cu2O was greatly influenced by ...

  8. Optical and mode-locking properties of InGaN/GaN based hetero-structures

    International Nuclear Information System (INIS)

    Irshad, A.

    2011-01-01

    mode-locking properties. It exhibits rather a good optical quality, high saturable losses, substantially lower saturation fluence and rather fast absorption recovery time. Frequency resolved pump probe measurements revealed that the quantum dot hetero-structure can be used in a relatively broad spectral range. Furthermore, by studying the dynamics of photo-induced carriers in the quantum dot hetero-structure a very interesting phenomenon has been observed. Namely, the dynamics of the photo-induced carriers in the quantum dot heterostructure have been found to be very strongly influenced by excitation energy, wavelength and repetition rate which was attributed to the effect of local heating. This, to our knowledge, is one of the first such extensive studies of the dependence of optical properties of the InGaN quantum dot hetero-structures on excitation conditions. (author)

  9. Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

    Science.gov (United States)

    Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

    2018-04-01

    The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

  10. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

    Science.gov (United States)

    Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

    2018-01-01

    Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the

  11. Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

    2013-03-15

    In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

  12. Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

    Science.gov (United States)

    Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

    2017-10-18

    The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

  13. InAs/InAsP composite channels for antimonide-based field-effect transistors

    International Nuclear Information System (INIS)

    Lin, H.-K.; Kadow, C.; Dahlstroem, M.; Bae, J.-U.; Rodwell, M.J.W.; Gossard, A.C.; Brar, B.; Sullivan, G.; Nagy, G.; Bergman, J.

    2004-01-01

    We report the growth and transport characteristics of stepped InAs/InAs 1-x P x quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs 1-x P x grown at 430 deg. C substrate temperature (nominal x=0.2), a high 22 500 cm 2 /V s electron mobility was observed, while 7100 cm 2 /V s mobility was observed in a single strained InAs 1-x P x quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device

  14. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    Science.gov (United States)

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-04-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

  15. The effect of disorder on the electronic and magnetic properties of Mn2CoAl/GaAs heterostructures

    International Nuclear Information System (INIS)

    Feng, Yu; Tian, Chun-lin; Yuan, Hong-kuan; Kuang, An-long; Chen, Hong

    2015-01-01

    We study the effect of disorder, including swap and antisite, on the electronic and magnetic properties of heterostructures by using extensive first-principles calculations within density functional theory. Thirteen kinds of swap disorders and sixteen kinds of antisite disorders are proposed and studied comprehensively. Our calculation reveals that disorders at the interface have low formation energies, indicating that disorders are most likely to appear at the interface instead of the deep layer. Among all kinds of disorders, Mn 1 (Al) (where the interface Mn is occupied by an Al atom) and Mn 1 (As) (where the interface Mn is occupied by an As atom from a GaAs slab) antisite disorders possess the lowest formation energies. This shows that the interface Mn has a higher probability of being replaced by an Al atom, and that an As atom from a GaAs slab easily diffuses into a Mn 2 CoAl slab and occupies the position of the interface Mn. Moreover, further study on the interface electronic structure reveals that interface spin polarization suffers dramatic reduction due to Mn 1 (Al) and Mn 1 (As) antisite disorders. It can be deduced that the interface state, together with Mn 1 (Al) and Mn 1 (As) antisite disorders, may be the main causes of the low TMR ratio of Mn 2 CoAl/GaAs heterostructures. (paper)

  16. Critical current oscillations in S/F heterostructures in the presence of s-d scattering

    International Nuclear Information System (INIS)

    Vedyayev, A.V.; Ryzhanova, N.V.; Pugach, N.G.

    2006-01-01

    Josephson current is investigated in the superconductor/ferromagnet/superconductor junction. It was shown that the current exhibited damping oscillations as a function of the ferromagnetic layer thickness. Previous theories based on Usadel or Eilenberger equations have predicted that the damping length and oscillation period divided by 2π were the same for weak ferromagnetic spacer. This contradicts past experiments. A new calculation of the Josephson current is proposed. The Gorkov equations are solved taking into account s-d scattering in ferromagnet. It is shown that the oscillation period depends only on the exchange magnetic field in the spacer, whereas the damping length is connected to the ferromagnetic mean free path. The concordance with the former experiment allows one to conclude that s-d scattering as a pair-breaking mechanism plays a significant role in the proximity effect in S/F heterostructures

  17. Structural and proximity-induced ferromagnetic properties of topological insulator-magnetic insulator heterostructures

    Directory of Open Access Journals (Sweden)

    Zilong Jiang

    2016-05-01

    Full Text Available The spontaneously broken time reversal symmetry can lead to the formation of an energy gap in the Dirac spectrum of the surface states of a topological insulator (TI which can consequently give rise to a variety of interesting phenomena potentially useful for spintronics. In this work, we couple a non-magnetic TI to a high Curie temperature TC magnetic insulator to induce strong exchange interaction via the proximity effect. We have successfully grown 5 quintuple layer thick ternary TI (BixSb1-x2Te3 films on atomically flat yttrium iron garnet (YIG film with the combination of molecular beam epitaxy and pulsed laser deposition, in which the Fermi level position relative to the Dirac point is varied by controlling the Bi:Sb ratio. The anomalous Hall effect (AHE and suppressed weak antilocalization (WAL measured under out of plane magnetic fields reveal that the TI surface in contact with YIG is magnetized. Our high-quality (BixSb1-x2Te3/Y IG heterostructure provides a tunable system for exploring the quantum anomalous Hall effect (QAHE at higher temperatures in TI-based spintronic devices.

  18. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  19. Spectroscopy and dynamics of charge transfer excitons in type-II band aligned quantum confined heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kushavah, Dushyant [Centre for Research in Nanotechnology and Science, IIT Bombay-400076, Mumbai (India); Mohapatra, P. K.; Vasa, P.; Singh, B. P., E-mail: bhanups@iitb.ac.in [Department of physics, IIT Bombay, Mumbai-400076 (India); Rustagi, K. C. [Indian Institute of Science Education and Research Bhopal-462066, Bhopal (India); Bahadur, D. [Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai-400076 (India)

    2015-05-15

    We illustrate effect of charge transfer (CT) in type-II quantum confined heterostructure by comparing CdSe quantum dots (QDs), CdSe/CdTe heterostructure quantum dots (HQDs) and CdSe/CdTe/CdSe quantum well-quantum dots (QWQDs) heterostructures. CdSe core QDs were synthesized using a kinetic growth method where QD size depends on reaction time. For shell coating we used modified version of successive ionic layer adsorption and reaction (SILAR). Size of different QDs ∼5 to 7 nm were measured by transmission electron microscopy (TEM). Strong red shift from ∼597 to ∼746 nm in photoluminescence (PL) spectra from QDs to QWQDs shows high tunability which is not possible with single constituent semiconductor QDs. PL spectra have been recorded at different temperatures (10K-300K). Room temperature time correlated single photon counting (TCSPC) measurements for QDs to QWQDs show three exponential radiative decay. The slowest component decay constant in QWQDs comes around eight fold to ∼51 ns as compared to ∼6.5 ns in HQD suggesting new opportunities to tailor the radiative carrier recombination rate of CT excitons.

  20. In situ degradation studies of two-dimensional WSe₂-graphene heterostructures.

    Science.gov (United States)

    Wang, B; Eichfield, S M; Wang, D; Robinson, J A; Haque, M A

    2015-09-14

    Heterostructures of two-dimensional materials can be vulnerable to thermal degradation due to structural and interfacial defects as well as thermal expansion mismatch, yet a systematic study does not exist in the literature. In this study, we investigate the degradation of freestanding WSe2-graphene heterostructures due to heat and charge flow by performing in situ experiments inside a transmission electron microscope. Experimental results show that purely thermal loading requires higher temperatures (>850 °C), about 150 °C higher than that under combined electrical and thermal loading. In both cases, selenium is the first element to decompose and migration of silicon atoms from the test structure to the freestanding specimen initiates rapid degradation through the formation of tungsten disilicide and silicon carbide. The role of the current flow is to enhance the migration of silicon from the sample holder and to knock-out the selenium atoms. The findings of this study provide fundamental insights into the degradation of WSe2-graphene heterostructures and inspire their application in electronics for use in harsh environments.

  1. Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic properties.

    Science.gov (United States)

    Marquardt, Oliver; Krause, Thilo; Kaganer, Vladimir; Martín-Sánchez, Javier; Hanke, Michael; Brandt, Oliver

    2017-05-26

    We present a systematic theoretical study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial [Formula: see text] nanowire (NW) heterostructures. Our simulations reveal that for a sufficiently large ratio between the thickness of the [Formula: see text] disk and the diameter of the NW, the elastic relaxation leads to a significant reduction of the built-in electrostatic potential in comparison to a planar system of similar layer thickness and In content. In this case, the ground state transition energies approach constant values with increasing thickness of the disk and only depend on the In content, a behavior usually associated to that of a quantum well free of built-in electrostatic potentials. We show that the structures under consideration are by no means field-free, and the built-in potentials continue to play an important role even for ultrathin NWs. In particular, strain and the resulting polarization potentials induce complex confinement features of electrons and holes, which depend on the In content, shape, and dimensions of the heterostructure.

  2. Organoclay hybrid materials as precursors of porous ZnO/silica-clay heterostructures for photocatalytic applications

    Directory of Open Access Journals (Sweden)

    Marwa Akkari

    2016-12-01

    Full Text Available In this study, ZnO/SiO2-clay heterostructures were successfully synthesized by a facile two-step process applied to two types of clays: montmorillonite layered silicate and sepiolite microfibrous clay mineral. In the first step, intermediate silica–organoclay hybrid heterostructures were prepared following a colloidal route based on the controlled hydrolysis of tetramethoxysilane in the presence of the starting organoclay. Later on, pre-formed ZnO nanoparticles (NP dispersed in 2-propanol were incorporated under ultrasound irradiation to the silica–organoclay hybrid heterostructures dispersed in 2-propanol, and finally, the resulting solids were calcinated to eliminate the organic matter and to produce ZnO nanoparticles (NP homogeneously assembled to the clay–SiO2 framework. In the case of montmorillonite the resulting materials were identified as delaminated clays of ZnO/SiO2-clay composition, whereas for sepiolite, the resulting heterostructure is constituted by the assembling of ZnO NP to the sepiolite–silica substrate only affecting the external surface of the clay. The structural and morphological features of the prepared heterostructures were characterized by diverse physico-chemical techniques (such as XRD, FTIR, TEM, FE-SEM. The efficiency of these new porous ZnO/SiO2-clay heterostructures as potential photocatalysts in the degradation of organic dyes and the removal of pharmaceutical drugs in water solution was tested using methylene blue and ibuprofen compounds, respectively, as model of pollutants.

  3. Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Elder, Robert M., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Neupane, Mahesh R., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Chantawansri, Tanya L. [U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States)

    2015-08-17

    Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

  4. Growth and characterization of manganese doped III-V heterostructures; Herstellung und Charakterisierung von Mangan dotierten III-V Halbleiterheterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Wurstbauer, Ursula

    2008-04-15

    Subject of this thesis is the growth of III-V heterostructures doped with manganese by means of molecular beam epitaxy (MBE). The characterization was done primarily by magnetotransport measurements in the temperature range from 300 K to 20 mK and fields up to 19 T. Two different kind of Mn doped materials, ferromagnetic GaMnAs layers and Mn modulation doped magnetic two dimensional hole systems were studied. The first part focuses on the enhancement of the electric and magnetic properties of ferromagnetic properties and the integration of GaMnAs layers in more sophisticated heterostructures. Therefore, the crystal quality and the influence of the buffer layer beneath the magnetic layer are crucial. The MBE-growth of ferromagnetic GaMnAs layers on (001), (311)A and (311)A was successfully achieved with present values of the Curie-temperature (TC). Additionally, the growth of ferromagnetic GaMnAs layers on nonpolar (110) substrates and on cleaved [110] edges was established. An application of the latter was the investigation of magnetic bipolar junctions. Magnetic two dimensional hole gases (M2DHG) has been realized by the use of In0.75Al0.25As/In0.75Ga0.25As/InAs quantum well (QW) structures. It is necessary to grow a buffer layer for strain relaxation due to the lattice mismatch by gradually increasing the In mole fraction. Magnetotransport measurements were carried out on Si doped two-dimensional electron gases (2DEG) and on Mn doped M2DHGs. From magnetotransport measurements on the M2DHGs we see some interesting features, in particular in the mK region. From the 2DEGs and all non inverted doped M2DEGs weak localization and weak antilocalization effects can be observed in the low field region. Whereas all M2DHGs with an inverted doping layer show strong localization effects and a metal insulator transition dependent on the applied magnetic field perpendicular to the QW. In the high field region Shubnikov-de-Haas oscillations in the longitudinal resistance and

  5. Optimization problems of QW-SCH heterostructures AlGaAs/GaAs designed for working at 808 nm band

    International Nuclear Information System (INIS)

    Malag, A.; Kozlowska, A.; Strupinski, W.; Mozdzonek, M.; Dobrzanski, L.; Teodorczyk, M.; Mroziewicz, B.

    1999-01-01

    Semiconductor laser diodes (LDs) emitting in the 808 nm range found main field of application in the pumping systems of Nd 3+ :YAG lasers. Because of narrow absorption line of YAG material, narrow emission line of the laser pump exactly at the 808 nm wavelength is expected at the temperature optimised from the viewpoint of its stabilization (usually it is about 15 o C). To meet these requirements, an optimisation of the laser (AlGa)As heterostructure because of the composition and thickness of the constituent layers is necessary. In the communicate the design foundations, the characteristics of the manufactured LDs based on this design and intrinsic limitations of the possibility of 'tuning' the lasers to desired wavelength in the technological process are presented. The reported LDs are of the wide-stripe type with the Schottky-junction-isolation and have been manufactured from the MOVPE grown (Alga)As heterostructure. (author)

  6. Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Di; Baek, David J.; Hong, Seung Sae; Kourkoutis, Lena F.; Hikita, Yasuyuki; Hwang, Harold Y.

    2016-08-22

    The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr3Al2O6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr3Al2O6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.

  7. Mixed Dimensional Van der Waals Heterostructures for Opto-Electronics.

    Science.gov (United States)

    Jariwala, Deep

    The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into ``all-2D'' van der Waals heterostructures, this concept is not limited to 2D materials alone. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through noncovalent interactions. In the first part of this talk I will present our work on emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices performed at Northwestern University. I will present two distinct examples of gate-tunable p-n heterojunctions 1. Single layer n-type MoS2\\ (2D) combined with p-type semiconducting single walled carbon nanotubes (1D) and 2. Single layer MoS2 combined with 0D molecular semiconductor, pentacene. I will present the unique electrical properties, underlying charge transport mechanisms and photocurrent responses in both the above systems using a variety of scanning probe microscopy techniques as well as computational analysis. This work shows that van der Waals interactions are robust across different dimensionalities of materials and can allow fabrication of semiconductor devices with unique geometries and properties unforeseen in bulk semiconductors. Finally, I will briefly discuss our recent work from Caltech on near-unity absorption in atomically-thin photovoltaic devices. This work is supported by the Materials Research Center at Northwestern University, funded by the National Science Foundation (NSF DMR-1121262) and the Resnick Sustainability Institute at Caltech.

  8. Heterostructures for Realizing Magnon-Induced Spin Transfer Torque

    Directory of Open Access Journals (Sweden)

    P. B. Jayathilaka

    2012-01-01

    Full Text Available This work reports efforts fabricating heterostructures of different materials relevant for the realization of magnon-induced spin transfer torques. We find the growth of high-quality magnetite on MgO substrates to be straightforward, while using transition metal buffer layers of Fe, Cr, Mo, and Nb can alter the structural and magnetic properties of the magnetite. Additionally, we successfully fabricated and characterized Py/Cr/Fe3O4 and Fe3O4/Cr/Fe3O4 spin valve structures. For both, we observe a relatively small giant magnetoresistance and confirm an inverse dependence on spacer layer thickness. Thus, we have shown certain materials combinations that may form the heterostructures that are the building blocks necessary to achieve magnon-induced spin transfer torque devices.

  9. Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

    Science.gov (United States)

    Cui, B. S.; Guo, X. B.; Wu, K.; Li, D.; Zuo, Y. L.; Xi, L.

    2016-03-01

    Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe65Co35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (~4 GPa for PI as compared to ~180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work.

  10. Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

    International Nuclear Information System (INIS)

    Cui, B S; Guo, X B; Wu, K; Li, D; Zuo, Y L; Xi, L

    2016-01-01

    Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe 65 Co 35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (∼4 GPa for PI as compared to ∼180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work. (paper)

  11. Charge and Spin Transport in Graphene Heterostructures and Cr2Ge2Te6

    Science.gov (United States)

    Lin, Zhisheng

    . Furthermore, we observe a reduction of the band gap of CGT by approximately 0.066 eV once the applied pressure reaches 2 GPa. We verify that the magnetoresistance (MR) change originates from anisotropic magnetoresistance (AMR) by measuring the temperature dependence of MR below and above Curie temperature (TC) under the different applied pressures. The last part is focused on the proximity effects in bilayer graphene/WSe2 heterostructures and the pressure induced insulating behavior. The enhancement of spin- orbit coupling is verified by observing the weak-anti localization for the graphene region covered with WSe2 but the weak localization (WL) for the uncovered region. The Rashba SOC strength value extracted from the weak-antilocalization (WAL) fitting is about 1 meV while the intrinsic SOC in graphene is about tens of microeV. It increases by more than two orders of magnitude. Graphene covered with WSe2 shows a strong insulating behavior by applying pressure and the insulating behavior is stronger under higher pressure, which is a signature of a band gap opening. Two hypotheses to explain the insulating behavior are discussed. One is the strain induced work function difference in top layer and bottom layer; this difference causes the charge transfer and builds up an electric field, generating the band gap. The other hypothesis is the proximity induced intrinsic electric field built across the bilayer graphene/WSe2 heterostructure, resulting in the breaking of inversion symmetry.

  12. Spin-torque generation in topological insulator based heterostructures

    KAUST Repository

    Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah

    2016-01-01

    Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather

  13. Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides

    Directory of Open Access Journals (Sweden)

    Haimei Qi

    2018-01-01

    Full Text Available Two dimensional (2D materials have gained significant attention since the discovery of graphene in 2004. Layered transition metal dichalcogenides (TMDs have become the focus of 2D materials in recent years due to their wide range of chemical compositions and a variety of properties. These TMDs layers can be artificially integrated with other layered materials into a monolayer (lateral or a multilayer stack (vertical heterostructures. The resulting heterostructures provide new properties and applications beyond their component 2D atomic crystals and many exciting experimental results have been reported during the past few years. In this review, we present the various synthesis methods (mechanical exfoliation, physical vapor transport, chemical vapor deposition, and molecular beam epitaxy method on van der Waals heterostructures based on different TMDs as well as an outlook for future research.

  14. Interlayer electron-hole pair multiplication by hot carriers in atomic layer semiconductor heterostructures

    Science.gov (United States)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger; Aji, Vivek; Gabor, Nathaniel

    Two-dimensional heterostructures composed of atomically thin transition metal dichalcogenides provide the opportunity to design novel devices for the study of electron-hole pair multiplication. We report on highly efficient multiplication of interlayer electron-hole pairs at the interface of a tungsten diselenide / molybdenum diselenide heterostructure. Electronic transport measurements of the interlayer current-voltage characteristics indicate that layer-indirect electron-hole pairs are generated by hot electron impact excitation. Our findings, which demonstrate an efficient energy relaxation pathway that competes with electron thermalization losses, make 2D semiconductor heterostructures viable for a new class of hot-carrier energy harvesting devices that exploit layer-indirect electron-hole excitations. SHINES, an Energy Frontier Research Center funded by the U.S. Department of Energy, Air Force Office of Scientific Research.

  15. Ballistic-electron-emission spectroscopy of AlxGa1-xAs/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    International Nuclear Information System (INIS)

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-01-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al x Ga 1-x As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0≤x≤1). The initial (Γ) BEES thresholds for Al x Ga 1-x As single barriers with 0≤x≤0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime (x>0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al x Ga 1-x As X valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al x Ga 1-x As interface produces a significant fraction of thisX valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al x Ga 1-x As Γ, L, and X points yields good agreement over the entire composition range. copyright 1997 The American Physical Society

  16. Theoretical investigation of spin-filtering in CrAs/GaAs heterostructures

    International Nuclear Information System (INIS)

    Stickler, B. A.; Ertler, C.; Pötz, W.; Chioncel, L.

    2013-01-01

    The electronic structure of bulk zinc-blende GaAs, zinc-blende and tetragonal CrAs, and CrAs/GaAs supercells, computed within linear muffin-tin orbital (LMTO) local spin-density functional theory, is used to extract the band alignment for the [1,0,0] GaAs/CrAs interface in dependence of the spin orientation. With the lateral lattice constant fixed to the experimental bulk GaAs value, a local energy minimum is found for a tetragonal CrAs unit cell with a longitudinal ([1,0,0]) lattice constant reduced by ≈2%. Due to the identified spin-dependent band alignment, half-metallicity of CrAs no longer is a key requirement for spin-filtering. Based on these findings, we study the spin-dependent tunneling current in [1,0,0] GaAs/CrAs/GaAs heterostructures within the non-equilibrium Green's function approach for an effective tight-binding Hamiltonian derived from the LMTO electronic structure. Results indicate that these heterostructures are promising candidates for efficient room-temperature all-semiconductor spin-filtering devices

  17. Comparison of trap characteristics between AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by frequency dependent conductance measurement

    International Nuclear Information System (INIS)

    Chakraborty, Apurba; Biswas, Dhrubes

    2015-01-01

    Frequency dependent conductance measurement is carried out to observe the trapping effect in AlGaN/InGaN/GaN double heterostructure and compared that with conventional AlGaN/GaN single heterostructure. It is found that the AlGaN/InGaN/GaN diode structure does not show any trapping effect, whereas single heterostructure AlGaN/GaN diode suffers from two kinds of trap energy states in near depletion to higher negative voltage bias region. This conductance behaviour of AlGaN/InGaN/GaN heterostructure is owing to more Fermi energy level shift from trap energy states at AlGaN/InGaN junction compare to single AlGaN/GaN heterostructure and eliminates the trapping effects. Analysis yielded interface trap energy state in AlGaN/GaN is to be with time constant of (33.8–76.5) μs and trap density of (2.38–0.656) × 10 12  eV −1  cm −2 in −3.2 to −4.8 V bias region, whereas for AlGaN/InGaN/GaN structure no interface energy states are found and the extracted surface trap energy concentrations and time constants are (5.87–4.39) ×10 10  eV −1  cm −2 and (17.8–11.3) μs, respectively, in bias range of −0.8–0.0 V

  18. Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

    KAUST Repository

    Ghosh, Sumit; Manchon, Aurelien

    2017-01-01

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

  19. Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

    KAUST Repository

    Ghosh, Sumit

    2017-11-29

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

  20. Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

    Science.gov (United States)

    Zannier, Valentina; Rossi, Francesca; Dubrovskii, Vladimir G; Ercolani, Daniele; Battiato, Sergio; Sorba, Lucia

    2018-01-10

    The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients and kink formation, as a consequence of nanoparticle-nanowire interactions during the metal-assisted growth. Understanding such interactions and how they affect the growth mode is fundamental to achieve a full control over the morphology and the properties of nanowire heterostructures for device applications. Here we demonstrate that the sole parameter affecting the growth mode (straight or kinked) of InP segments on InAs nanowire stems by the Au-assisted method is the nanoparticle composition. Indeed, straight InAs-InP nanowire heterostructures are obtained only when the In/Au ratio in the nanoparticles is low, typically smaller than 1.5. For higher In content, the InP segments tend to kink. Tailoring the In/Au ratio by the precursor fluxes at a fixed growth temperature enables us to obtain straight and radius-uniform InAs-InP nanowire heterostructures (single and double) with atomically sharp interfaces. We present a model that is capable of describing all the experimentally observed phenomena: straight growth versus kinking, the stationary nanoparticle compositions in pure InAs and InAs-InP nanowires, the crystal phase trends, and the interfacial abruptness. By taking into account different nanowire/nanoparticle interfacial configurations (forming wetting or nonwetting monolayers in vertical or tapered geometry), our generalized model provides the conditions of nanoparticle stability and abrupt heterointerfaces for a rich variety of growth scenarios. Therefore, our results provide a powerful tool for obtaining high quality InAs-InP nanowire heterostructures with well-controlled properties and can be extended to other material combinations based on the group V interchange.

  1. Synthesis of spherical Ag/ZnO heterostructural composites with excellent photocatalytic activity under visible light and UV irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hairui, E-mail: liuhairui1@126.com [College of Physics & Electronics Engineering, Henan Normal University, Henan Key Laboratory of Photovoltaic Materials, Xinxiang 453007 (China); Hu, Yanchun [College of Physics & Electronics Engineering, Henan Normal University, Henan Key Laboratory of Photovoltaic Materials, Xinxiang 453007 (China); Zhang, Zhuxia [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, Shanxi 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024 (China); Liu, Xuguang [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, Shanxi 030024 (China); Jia, Husheng [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, Shanxi 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024 (China); Xu, Bingshe [Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, Shanxi 030024 (China)

    2015-11-15

    Graphical abstract: Ag nanoparticles decorated ZnO microspheres heterostructural composites were fabricated via a two-step chemical method, and present enhanced UV and visible light photocatalytic activity, which ascribed to the formation of Schottky barriers in the regions between Ag-NPs and ZnO-MSs and effective electron transfer from plasmon-excited Ag(0) nanoparticles to ZnO-MSs by strong localization of surface plasmonic resonance. - Highlights: • Ag/ZnO microspheres heterostructural composites were fabricated via a two-step chemical method. • Ag/ZnO composites exhibits enhanced visible light and UV light photocatalytic activity. • The UV and visible-light photocatalytic activity sequences are different for Ag/ZnO composites with the increase of Ag content. • The enhanced UV and visible light photocatalytic activity could be attributed to the formation of the Schottky barriers and surface plasmon resonance. - Abstract: Ag nanoparticles (Ag-NPs) decorated ZnO microspheres (ZnO-MSs) heterostructural composites were fabricated via a two-step chemical method. The ZnO-MSs with the diameter about 700 nm was initially prepared by ultrasonic technology. Subsequently, Ag-NPs with a diameter of 20–50 nm were anchored onto the surface of the as-prepared ZnO-MSs by a microwave polyol process. The morphology, structural and optical properties of the as-synthesized materials were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and high resolution TEM (HRTEM), X-ray photoelectron spectroscopy (XPS), UV–visible absorption spectroscopy, and photoluminescence spectroscopy. The results show that the surface plasmon absorption band of Ag/ZnO composites is distinctly broadened and the PL intensity of Ag/ZnO heterostructural composites varies with the increase of Ag loading. The photocatalytic activity of the Ag/ZnO composites were evaluated by the degradation of rhodamine B (Rh

  2. Synthesis of spherical Ag/ZnO heterostructural composites with excellent photocatalytic activity under visible light and UV irradiation

    International Nuclear Information System (INIS)

    Liu, Hairui; Hu, Yanchun; Zhang, Zhuxia; Liu, Xuguang; Jia, Husheng; Xu, Bingshe

    2015-01-01

    Graphical abstract: Ag nanoparticles decorated ZnO microspheres heterostructural composites were fabricated via a two-step chemical method, and present enhanced UV and visible light photocatalytic activity, which ascribed to the formation of Schottky barriers in the regions between Ag-NPs and ZnO-MSs and effective electron transfer from plasmon-excited Ag(0) nanoparticles to ZnO-MSs by strong localization of surface plasmonic resonance. - Highlights: • Ag/ZnO microspheres heterostructural composites were fabricated via a two-step chemical method. • Ag/ZnO composites exhibits enhanced visible light and UV light photocatalytic activity. • The UV and visible-light photocatalytic activity sequences are different for Ag/ZnO composites with the increase of Ag content. • The enhanced UV and visible light photocatalytic activity could be attributed to the formation of the Schottky barriers and surface plasmon resonance. - Abstract: Ag nanoparticles (Ag-NPs) decorated ZnO microspheres (ZnO-MSs) heterostructural composites were fabricated via a two-step chemical method. The ZnO-MSs with the diameter about 700 nm was initially prepared by ultrasonic technology. Subsequently, Ag-NPs with a diameter of 20–50 nm were anchored onto the surface of the as-prepared ZnO-MSs by a microwave polyol process. The morphology, structural and optical properties of the as-synthesized materials were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and high resolution TEM (HRTEM), X-ray photoelectron spectroscopy (XPS), UV–visible absorption spectroscopy, and photoluminescence spectroscopy. The results show that the surface plasmon absorption band of Ag/ZnO composites is distinctly broadened and the PL intensity of Ag/ZnO heterostructural composites varies with the increase of Ag loading. The photocatalytic activity of the Ag/ZnO composites were evaluated by the degradation of rhodamine B (Rh

  3. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  4. High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

    Science.gov (United States)

    Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

    2016-06-01

    Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Large microwave tunability of GaAs-based multiferroic heterostructure for applications in monolithic microwave integrated circuits

    International Nuclear Information System (INIS)

    Chen Yajie; Gao Jinsheng; Vittoria, C; Harris, V G; Heiman, D

    2010-01-01

    Microwave magnetoelectric coupling in a ferroelectric/ferromagnetic/semiconductor multiferroic (MF) heterostructure, consisting of a Co 2 MnAl epitaxial film grown on a GaAs substrate bonded to a lead magnesium niobate-lead titanate (PMN-PT) crystal, is reported. Ferromagnetic resonance measurements were carried out at X-band under the application of electric fields. Results indicate a frequency tuning of 125 MHz for electric field strength of 8 kV cm -1 resulting in a magnetoelectric coupling coefficient of 3.4 Oe cm kV -1 . This work explores the potential of electronically controlled MF devices for use in future monolithic microwave integrated circuits.

  6. The effect of annealing atmosphere on magnetoelectric coupling of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3} layered heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tingxian, E-mail: wxlltx@126.com [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455002 (China); Wang, Hongwei [School of Mathematics and Statistics, Anyang Normal University, Anyang 455002 (China); Ju, Lin; Tang, Zhenjie; Ma, Dongwei [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455002 (China); Li, Kuoshe [National Engineering Research Central for Rare earth Materials, Beijing 100088 (China)

    2015-10-15

    The epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3} (LSMO/BTO) layered heterostructure was grown on (001) oriented LaAlO{sub 3} single-crystal substrate by pulsed laser deposition. Our results showed that the in-situ annealing process in oxygen made the LSMO/BTO interface possess higher oxygen content than that of the one annealing in vacuum, which leaded to the LSMO film presented higher magnetic permeability and higher saturated magnetization. The P–E hystersis loop only could be detected in the sample annealing in oxygen. The ME voltage coefficient of the LSMO/BTO heterostructure annealing in oxygen was higher than that of the one annealing in vacuum, which suggested a more effective ME coupling. It was a combined effect of the two main ME coupling mechanisms, including strain mediation, and polarized carrier mediation.

  7. Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yongqing; Pei, Qing-Xiang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Gang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Yong-Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

    2016-02-14

    Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat current along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications.

  8. Uniform photoresponse in thermally oxidized Ni and MoS{sub 2} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Wei [College of Science, National University of Defense Technology, Changsha (China); National Laboratory of Solid State Microstructures, School of Physics, Nanjing University (China); Peng, Gang; Wang, Fei [College of Science, National University of Defense Technology, Changsha (China); Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Nanjing University (China); Zhang, Xue-Ao; Qin, Shiqiao [College of Science, National University of Defense Technology, Changsha (China); State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha (China)

    2017-09-15

    Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS{sub 2}) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO{sub x} layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS{sub 2}/NiO{sub x}/Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Micromagnetic simulation of exchange coupled ferri-/ferromagnetic heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Oezelt, Harald, E-mail: harald.oezelt@fhstp.ac.at [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Kovacs, Alexander; Reichel, Franz; Fischbacher, Johann; Bance, Simon [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Gusenbauer, Markus [Center for Integrated Sensor Systems, Danube University Krems, Viktor Kaplan-Straße 2, A-2700 Wiener Neustadt (Austria); Schubert, Christian; Albrecht, Manfred [Institute of Physics, Chemnitz University of Technology, Reichenhainer Straße 70, D-09126 Chemnitz (Germany); Institute of Physics, University of Augsburg, Universitätsstraße 1, D-86159 Augsburg (Germany); Schrefl, Thomas [Industrial Simulation, St. Pölten University of Applied Sciences, Matthias Corvinus-Straße 15, A-3100 St. Pölten (Austria); Center for Integrated Sensor Systems, Danube University Krems, Viktor Kaplan-Straße 2, A-2700 Wiener Neustadt (Austria)

    2015-05-01

    Exchange coupled ferri-/ferromagnetic heterostructures are a possible material composition for future magnetic storage and sensor applications. In order to understand the driving mechanisms in the demagnetization process, we perform micromagnetic simulations by employing the Landau–Lifshitz–Gilbert equation. The magnetization reversal is dominated by pinning events within the amorphous ferrimagnetic layer and at the interface between the ferrimagnetic and the ferromagnetic layer. The shape of the computed magnetization reversal loop corresponds well with experimental data, if a spatial variation of the exchange coupling across the ferri-/ferromagnetic interface is assumed. - Highlights: • We present a model for exchange coupled ferri-/ferromagnetic heterostructures. • We incorporate the microstructural features of the amorphous ferrimagnet. • A distribution of interface exchange coupling is assumed to fit experimental data. • The reversal is dominated by pinning within the ferrimagnet and at the interface.

  10. Strain, doping, and disorder effects in GaAs/Ge/Si heterostructures: A Raman spectroscopy investigation

    Science.gov (United States)

    Mlayah, A.; Carles, R.; Leycuras, A.

    1992-01-01

    The present work is devoted to a Raman study of GaAs/Ge/Si heterostructures grown by the vapor-phase epitaxy technique. We first show that the GaAs epilayers are submitted to a biaxial tensile strain. The strain relaxation generates misfit dislocations and thus disorder effects which we analyze in terms of translational invariance loss and Raman selection rules violation. The first-order Raman spectra of annealed samples exhibit an unexpected broadband we identify as due to scattering by a coupled LO phonon-damped plasmon mode. This is corroborated by an accurate line-shape analysis which accounts for the recorded spectra and makes evident the presence of free carriers within the GaAs layers. Their density is estimated from the deduced plasmon frequency and also using a method we have presented in a previous work.

  11. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures

    Science.gov (United States)

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-01-01

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices. PMID:27553787

  12. Electronic structures and enhanced optical properties of blue phosphorene/transition metal dichalcogenides van der Waals heterostructures.

    Science.gov (United States)

    Peng, Qiong; Wang, Zhenyu; Sa, Baisheng; Wu, Bo; Sun, Zhimei

    2016-08-24

    As a fast emerging topic, van der Waals (vdW) heterostructures have been proposed to modify two-dimensional layered materials with desired properties, thus greatly extending the applications of these materials. In this work, the stacking characteristics, electronic structures, band edge alignments, charge density distributions and optical properties of blue phosphorene/transition metal dichalcogenides (BlueP/TMDs) vdW heterostructures were systematically studied based on vdW corrected density functional theory. Interestingly, the valence band maximum and conduction band minimum are located in different parts of BlueP/MoSe2, BlueP/WS2 and BlueP/WSe2 heterostructures. The MoSe2, WS2 or WSe2 layer can be used as the electron donor and the BlueP layer can be used as the electron acceptor. We further found that the optical properties under visible-light irradiation of BlueP/TMDs vdW heterostructures are significantly improved. In particular, the predicted upper limit energy conversion efficiencies of BlueP/MoS2 and BlueP/MoSe2 heterostructures reach as large as 1.16% and 0.98%, respectively, suggesting their potential applications in efficient thin-film solar cells and optoelectronic devices.

  13. Amplified emission and modified spectral features in an opal hetero-structure mediated by passive defect mode localization

    Science.gov (United States)

    Rout, Dipak; Kumar, Govind; Vijaya, R.

    2018-01-01

    A photonic crystal hetero-structure consisting of a passive planar defect of SiO2 thin film sandwiched between two identical opals grown by inward growing self-assembly method using Rhodamine-B dye-doped polystyrene microspheres is studied for the characteristics of dye emission. The optical properties and the defect mode characteristics of the hetero-structure are studied from the reflection and transmission measurements. Laser-induced fluorescence from the hetero-structure showed amplified and spectrally narrowed emission compared to the photonic crystal emphasizing the role of the defect mode and distributed feedback. The enhanced emission is also complemented by the reduction in fluorescence decay time in the case of the hetero-structure in comparison to the 3D photonic crystals.

  14. Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

    Science.gov (United States)

    Lükens, G.; Yacoub, H.; Kalisch, H.; Vescan, A.

    2016-05-01

    The interface charge density between the gate dielectric and an AlGaN/GaN heterostructure has a significant impact on the absolute value and stability of the threshold voltage Vth of metal-insulator-semiconductor (MIS) heterostructure field effect transistor. It is shown that a dry-etching step (as typically necessary for normally off devices engineered by gate-recessing) before the Al2O3 gate dielectric deposition introduces a high positive interface charge density. Its origin is most likely donor-type trap states shifting Vth to large negative values, which is detrimental for normally off devices. We investigate the influence of oxygen plasma annealing techniques of the dry-etched AlGaN/GaN surface by capacitance-voltage measurements and demonstrate that the positive interface charge density can be effectively compensated. Furthermore, only a low Vth hysteresis is observable making this approach suitable for threshold voltage engineering. Analysis of the electrostatics in the investigated MIS structures reveals that the maximum Vth shift to positive voltages achievable is fundamentally limited by the onset of accumulation of holes at the dielectric/barrier interface. In the case of the Al2O3/Al0.26Ga0.74N/GaN material system, this maximum threshold voltage shift is limited to 2.3 V.

  15. Efficient photocarrier injection in a transition metal oxide heterostructure

    CERN Document Server

    Muraoka, Y; Ueda, Y; Hiroi, Z

    2002-01-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO sub 2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO sub 2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO sub 2 /TiO sub 2 :Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO sub 2 :Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO sub 2. (letter to the editor)

  16. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

    Energy Technology Data Exchange (ETDEWEB)

    Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Lundin, V. W.; Zavarin, E. E.; Yagovkina, M. A.; Sakharov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Usov, S. O. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Bulashevich, K. A.; Karpov, S. Yu. [“Soft-Impact” Ltd. (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)

    2016-10-15

    The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.

  17. Fabrication and assembly of two-dimensional TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures with type II band alignment for enhanced photocatalytic performance

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Tao [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052 (China); Wang, Yun, E-mail: yun.wang@griffith.edu.au [Centre for Clean Environment and Energy and Griffith School of Environment, Griffith University, Gold Coast, QLD, 4222 (Australia); Zhou, Xiaofang; Zheng, Xiaoli [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052 (China); Xu, Qun, E-mail: qunxu@zzu.edu.cn [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052 (China); Chen, Zhimin; Ren, Yumei; Yan, Bo [College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052 (China)

    2017-05-01

    Graphical abstract: 2D heterostructures of TiO{sub 2}/WO{sub 3}·H{sub 2}O nanosheets have been successfully fabricated with assistance of supercritical CO{sub 2} (SC CO{sub 2}). The formation of heterostructures is beneficial to effective separation of the electron-hole pairs, thus resulting in enhanced photocatalytic activity toward the high photocurrent under simulated solar light irradiation. - Highlights: • In this study we have successfully exfoliated ultrathin WO{sub 3}·H{sub 2}O nanosheets from tunsten acid(H{sub 2}WO{sub 4}) with supercritical CO{sub 2} (SC CO{sub 2}). • A novel type II 2D ultrathin TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures were fabricated with the assistance of SC CO{sub 2}. • The formation of TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures is beneficial to effective separation of the electron-hole pairs. • The photocurrent response and MO degradation of TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures exhibit significantly improvement. - Abstract: The recombination of photo-induced charges is one of the main issues to limit the large-scale applications in photocatalysis and photoelectrocatalysis. To improve the charge separation, we fabricate a novel type II 2D ultrathin TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures with the assistance of supercritical CO{sub 2} (SC CO{sub 2}) in this work. The as-fabricated heterostructures possess high photocatalytic activity for the degradation of methyl orange(MO) and high photocurrent response under simulated solar light (AM 1.5). For the TiO{sub 2}/WO{sub 3}·H{sub 2}O heterostructures, the MO solution could be degraded by 95.5% in 150 min, and the photocurrent density reaches to 6.5 μA cm{sup −2}, exhibiting a significant enhancement compared with pure TiO{sub 2} and WO{sub 3}·H{sub 2}O nanosheets.

  18. Manipulation of surface plasmon polariton propagation on isotropic and anisotropic two-dimensional materials coupled to boron nitride heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Inampudi, Sandeep; Nazari, Mina; Forouzmand, Ali; Mosallaei, Hossein, E-mail: hosseinm@coe.neu.edu [Department of Electrical and Computer Engineering, Northeastern University, 360 Huntington Ave., Boston, Massachusetts 02115 (United States)

    2016-01-14

    We present a comprehensive analysis of surface plasmon polariton dispersion characteristics associated with isotropic and anisotropic two-dimensional atomically thin layered materials (2D sheets) coupled to h-BN heterostructures. A scattering matrix based approach is presented to compute the electromagnetic fields and related dispersion characteristics of stacked layered systems composed of anisotropic 2D sheets and uniaxial bulk materials. We analyze specifically the surface plasmon polariton (SPP) dispersion characteristics in case of isolated and coupled two-dimensional layers with isotropic and anisotropic conductivities. An analysis based on residue theorem is utilized to identify optimum optical parameters (surface conductivity) and geometrical parameters (separation between layers) to maximize the SPP field at a given position. The effect of type and degree of anisotropy on the shapes of iso-frequency curves and propagation characteristics is discussed in detail. The analysis presented in this paper gives an insight to identify optimum setup to enhance the SPP field at a given position and in a given direction on the surface of two-dimensional materials.

  19. Achieving tunable doping of MoSe2 based devices using GO@MoSe2 heterostructure

    Science.gov (United States)

    Maji, Tuhin Kumar; Tiwary, Krishna Kanhaiya; Karmakar, Debjani

    2017-05-01

    Doping nature of MoSe2, one of the promising Graphene analogous device material, can be tuned by controlling the concentration of functional groups in Graphene oxide (GO)@MoSe2 heterostructure. In this study, by first-principles simulation, we have observed that GO can be used as a carrier injection layer for MoSe2, where n or p type carriers are introduced within MoSe2 layer depending on the type and concentration of functional moieties in it. Both n and p-type Schottky barrier height modulations are investigated for different modeled configurations of the heterostructure. This combinatorial heterostructure can be a promising material for future electronic device application.

  20. Data on the synthesis processes optimization of novel β-NiS film modified CdS nanoflowers heterostructure nanocomposite for photocatalytic hydrogen evolution

    Directory of Open Access Journals (Sweden)

    Yu Zhang

    2018-02-01

    Full Text Available The data presented in this article are related to a research article entitled ‘Novel β-NiS film modified CdS nanoflowers heterostructure nanocomposite: extraordinarily highly efficient photocatalysts for hydrogen evolution’ (Zhang et al., 2018 [1]. In this article, we report original data on the synthesis processes optimization of the proposed nanocomposite on the basis of their optimum photocatalytic performance together with the comparison on the results of literatures and comparative experiments. The composition, microstructure, morphology, photocatalytic hydrogen evolution and photocatalytic stability of the corresponding samples are included in this report. The data are presented in this format in order to facilitate comparison with data from other researchers in the field and understanding the mechanism of similar catalysts. Keywords: NiS/CdS nanoflowers heterostructure, Photocatalysts, Water splitting, Hydrothermal synthesis, Optimization

  1. Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

    DEFF Research Database (Denmark)

    Xu, Zhangcheng

    2004-01-01

    deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

  2. A dewetting route to grow heterostructured nanoparticles based on thin film heterojunctions.

    Science.gov (United States)

    Li, Junjie; Yin, Deqiang; Li, Qiang; Chen, Chunlin; Huang, Sumei; Wang, Zhongchang

    2015-12-21

    Heterostructured nanoparticles have received considerable attention for their various applications due to their unique and tunable functionalities with respect to their individual bulk constituents. However, the current wet chemical synthesis of multicomponent heterostructured nanoparticles is rather complicated. Here, we report a simple and quick method to fabricate Co-Au dumbbell arrays by dewetting Co/Au heterojunctions on a Si substrate and demonstrate that the Co-Au dumbbells vary in size from 2 to 28 nm. We further show by chemical mapping that Co bells are covered by a pseudomorphic Au wetting layer of ∼4 Å, preventing the bells from oxidation. By controlling the thickness of metal heterojunctions and the annealing time, the morphology of the Co-Au nanoparticle is found to be transformed from the dumbbell to the core shell. This facile route is demonstrated to be useful for fabricating other metal-metal and metal-oxide heterostructures and hence holds technological promise for functional applications.

  3. Interlayer coupling effects on electronic properties of the phosphorene/h-BN van der Walls heterostructure: A first principles investigation

    Science.gov (United States)

    Luo, Yanwei; Zhang, Shuai; Chen, Weiguang; Jia, Yu

    2018-04-01

    By using first-principles calculations, we systemically investigate the electronic properties of phosphorene/h-BN heterostructure with different interlayer distances. Our results show that the electronic states in the vicinity of the Fermi level are completely dominated by phosphorene, and the system exhibits type-I band alignment consequently. Moreover, we also reveal the variation of the band structure of phosphorene/h-BN heterostructure with different interlayer distances. The band gap undergoes a direct to indirect transition as decreasing the interlayer distance. The mechanism of the band gap transition can be attributed to the different energy levels shifts, according to different electronic orbital characters on the band edge. In specific, the energy level of the P_pz bonding state shifts up while that of the P_px,py bonding state falls down, along with the enhancement of the interactions between phosphorene and h-BN.

  4. Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM

    Energy Technology Data Exchange (ETDEWEB)

    Stefanovich, G. B.; Pergament, A. L.; Boriskov, P. P.; Kuroptev, V. A., E-mail: v.a.kuroptev@gmail.com; Stefanovich, T. G. [Petrozavodsk State University (Russian Federation)

    2016-05-15

    The main aspects of the synthesis and experimental research of oxide diode heterostructures are discussed with respect to their use as selector diodes, i.e., access elements in oxide resistive memory. It is shown that charge transfer in these materials differs significantly from the conduction mechanism in p–n junctions based on conventional semiconductors (Si, Ge, A{sup III}–B{sup V}), and the model should take into account the electronic properties of oxides, primarily the low carrier drift mobility. It is found that an increase in the forward current requires an oxide with a small band gap (<1.3 eV) in the heterostructure composition. Heterostructures with Zn, In–Zn (IZO), Ti, Ni, and Cu oxides are studied; it is found that the CuO–IZO heterojunction has the highest forward current density (10{sup 4} A/cm{sup 2}).

  5. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11

    AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  6. Solution-Based Processing and Applications of Two-Dimensional Heterostructures

    Science.gov (United States)

    Hersam, Mark

    Two-dimensional materials have emerged as promising candidates for next-generation electronics and optoelectronics, but advances in scalable nanomanufacturing are required to exploit this potential in real-world technology. This talk will explore methods for improving the uniformity of solution-processed two-dimensional materials with an eye toward realizing dispersions and inks that can be deposited into large-area thin-films. In particular, density gradient ultracentrifugation allows the solution-based isolation of graphene, boron nitride, montmorillonite, and transition metal dichalcogenides (e.g., MoS2, WS2, ReS2, MoSe2, WSe2) with homogeneous thickness down to the atomically thin limit. Similarly, two-dimensional black phosphorus is isolated in organic solvents or deoxygenated aqueous surfactant solutions with the resulting phosphorene nanosheets showing field-effect transistor mobilities and on/off ratios that are comparable to micromechanically exfoliated flakes. By adding cellulosic polymer stabilizers to these dispersions, the rheological properties can be tuned by orders of magnitude, thereby enabling two-dimensional material inks that are compatible with a range of additive manufacturing methods including inkjet, gravure, screen, and 3D printing. The resulting solution-processed two-dimensional heterostructures show promise in several device applications including photodiodes, anti-ambipolar transistors, gate-tunable memristors, and heterojunction photovoltaics.

  7. Printable Transfer-Free and Wafer-Size MoS2/Graphene van der Waals Heterostructures for High-Performance Photodetection.

    Science.gov (United States)

    Liu, Qingfeng; Cook, Brent; Gong, Maogang; Gong, Youpin; Ewing, Dan; Casper, Matthew; Stramel, Alex; Wu, Judy

    2017-04-12

    Two-dimensional (2D) MoS 2 /graphene van der Waals heterostructures integrate the superior light-solid interaction in MoS 2 and charge mobility in graphene for high-performance optoelectronic devices. Key to the device performance lies in a clean MoS 2 /graphene interface to facilitate efficient transfer of photogenerated charges. Here, we report a printable and transfer-free process for fabrication of wafer-size MoS 2 /graphene van der Waals heterostructures obtained using a metal-free-grown graphene, followed by low-temperature growth of MoS 2 from the printed thin film of ammonium thiomolybdate on graphene. The photodetectors based on the transfer-free MoS 2 /graphene heterostructures exhibit extraordinary short photoresponse rise/decay times of 20/30 ms, which are significantly faster than those of the previously reported MoS 2 /transferred-graphene photodetectors (0.28-1.5 s). In addition, a high photoresponsivity of up to 835 mA/W was observed in the visible spectrum on such transfer-free MoS 2 /graphene heterostructures, which is much higher than that of the reported photodetectors based on the exfoliated layered MoS 2 (0.42 mA/W), the graphene (6.1 mA/W), and transfer-free MoS 2 /graphene/SiC heterostructures (∼40 mA/W). The enhanced performance is attributed to the clean interface on the transfer-free MoS 2 /graphene heterostructures. This printable and transfer-free process paves the way for large-scale commercial applications of the emerging 2D heterostructures in optoelectronics and sensors.

  8. Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice

    International Nuclear Information System (INIS)

    Wang, Yu

    2014-01-01

    We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.

  9. Quantum transport in new two-dimensional heterostructures: Thin films of topological insulators, phosphorene

    Science.gov (United States)

    Majidi, Leyla; Zare, Moslem; Asgari, Reza

    2018-06-01

    The unusual features of the charge and spin transport characteristics are investigated in new two-dimensional heterostructures. Intraband specular Andreev reflection is realized in a topological insulator thin film normal/superconducting junction in the presence of a gate electric field. Perfect specular electron-hole conversion is shown for different excitation energy values in a wide experimentally available range of the electric field and also for all angles of incidence when the excitation energy has a particular value. It is further demonstrated that the transmission probabilities of the incoming electrons from different spin subbands to the monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure have different behavior with the angle of incidence and perfect transmission occurs at defined angles of incidence to the proposed structure with different length of the N region, and different alignments of magnetization vectors. Moreover, the sign change of the spin-current density is demonstrated by tuning the chemical potential and exchange field of the F region.

  10. Organic heterostructures based on arylenevinylene oligomers deposited by MAPLE

    Czech Academy of Sciences Publication Activity Database

    Socol, M.; Preda, N.; Vacareanu, L.; Grigoras, M.; Socol, G.; Mihailescu, I. N.; Stanculescu, F.; Jelínek, Miroslav; Stanculescu, A.; Stoicanescu, M.

    2014-01-01

    Roč. 302, May (2014), s. 216-222 ISSN 0169-4332 Institutional support: RVO:68378271 Keywords : organic heterostructures * MAPLE * oligomer * optoelectronica Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

  11. Ag-Coated Heterostructures of ZnO-TiO2/Delaminated Montmorillonite as Solar Photocatalysts

    Directory of Open Access Journals (Sweden)

    Carolina Belver

    2017-08-01

    Full Text Available Heterostructures based on ZnO-TiO2/delaminated montmorillonite coated with Ag have been prepared by sol–gel and photoreduction procedures, varying the Ag and ZnO contents. They have been thoroughly characterized by XRD, WDXRF, UV–Vis, and XPS spectroscopies, and N2 adsorption, SEM, and TEM. In all cases, the montmorillonite was effectively delaminated with the formation of TiO2 anatase particles anchored on the clay layer’s surface, yielding porous materials with high surface areas. The structural and textural properties of the heterostructures synthesized were unaffected by the ZnO incorporated. The photoreduction led to solids with Ag nanoparticles decorating the surface. These materials were tested as photocatalysts for the degradation of several emerging contaminants with different nitrogen-bearing chemical structures under solar light. The catalysts yielded high rates of disappearance of the starting pollutants and showed quite stable performance upon successive applications.

  12. Low temperature junction magnetoresistance properties of Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4}/SiO{sub 2}/p-Si magnetic diode like heterostructure for spin-electronics

    Energy Technology Data Exchange (ETDEWEB)

    Panda, J.; Nath, T.K., E-mail: tnath@phy.iitkgp.ernet.in

    2016-02-29

    The magnetic heterojunction diode has been fabricated by growing Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4} (CZFO) on well cleaned p-Si substrate using pulsed laser deposition technique, and its behavior under magnetic field is experimentally studied in details. The magnetic field dependent current–voltage characteristics (I–V) have been studied at different isothermal conditions in the range of 5–300 K. The junction shows magnetic diode like rectifying behavior at low temperature, whereas at high temperatures the junction shows nonlinear I–V characteristics. Magnetic field shows a strong effect on junction resistance (CZFO/p-Si). It is interesting that the positive junction magnetoresistance (MR) thus produced, remains very large at low temperature regime (590% at 5 K) and gradually decreases at higher temperatures. In contrast, CZFO magnetic thin film shows negative MR behavior, whereas the junction shows large positive junction magnetoresistance (JMR) behavior throughout the temperature range. The origin of JMR has been best explained by standard spin injection theory. The temperature dependent spin life time (τ) has been estimated for our heterostructure. The value of τ decreases with increasing temperature. The spin life time (183 ps), spin polarization (0.71) and spin diffusion length (375 nm) have been estimated of the heterostructure at 10 K. - Highlights: • The junction magnetoresistance (JMR) of Co{sub 0.65}Zn{sub 0.35}Fe{sub 2}O{sub 4}/SiO{sub 2}/p-Si heterojunction is studied. • Heterostructure shows rectifying magnetic diode like behavior. • The highest positive JMR (590%) has been found to be at 5 K. • The origin of observed JMR has been best explained by spin injection theory. • The spin life time, spin diffusion length and spin polarization have been estimated at 10 K.

  13. Interface engineered construction of porous g-C3N4/TiO2 heterostructure for enhanced photocatalysis of organic pollutants

    Science.gov (United States)

    Li, Ya-Nan; Chen, Zhao-Yang; Wang, Min-Qiang; Zhang, Long-zhen; Bao, Shu-Juan

    2018-05-01

    A porous g-C3N4/TiO2 with hierarchical heterostructure has been successfully fabricated through a in situ assembling of small needle-like TiO2 on the surface of ultrathin g-C3N4 sheets. The ultrathin g-C3N4 sheets with carbon vacancies and rich hydroxyl groups were found to facilitate the nucleation and in situ growth of TiO2 and also to modulate the surface chemical activity of the g-C3N4/TiO2 hierarchical heterostructure. The as-designed photocatalytic heterojunction degraded Acid Orange with 82% efficiency after 10 min under simulated solar light, and possessed excellent cycle stability. Relative physical characterizations and photochemical experiments reveal that engineering the interface/surface of g-C3N4 plays a vital role in effectively constructing heterostructures of g-C3N4/TiO2, thus realizing efficient photoinduced electron-hole separation during photocatalytic process.

  14. High ionic conductivity in confined bismuth oxide-based heterostructures

    Directory of Open Access Journals (Sweden)

    Simone Sanna

    2016-12-01

    Full Text Available Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3 exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ, deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  15. High ionic conductivity in confined bismuth oxide-based heterostructures

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...... of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk....

  16. MAPLE prepared heterostructures with oligoazomethine: Fullerene derivative mixed layer for photovoltaic applications

    Science.gov (United States)

    Stanculescu, A.; Rasoga, O.; Socol, M.; Vacareanu, L.; Grigoras, M.; Socol, G.; Stanculescu, F.; Breazu, C.; Matei, E.; Preda, N.; Girtan, M.

    2017-09-01

    Mixed layers of azomethine oligomers containing 2,5-diamino-3,4-dicyanothiophene as central unit and triphenylamine (LV5) or carbazol (LV4) at both ends as donor and fullerene derivative, [6,6]-phenyl-C61 butyric acid butyl ester ([C60]PCB-C4) as acceptor, have been prepared by Matrix Assisted Pulsed Laser Evaporation (MAPLE) on glass/ITO and Si substrates. The effect of weight ratio between donor and acceptor (1:1; 1:2) and solvent type (chloroform, dimethylsulphoxide) on the optical (UV-vis transmission/absorption, photoluminescence) and morphological properties of LV4 (LV5): [C60]PCB-C4 mixed layers has been evidenced. Dark and under illumination I-V characteristics of the heterostructures realized with these mixed layers sandwiched between ITO and Al electrodes have revealed a solar cell behavior for the heterostructures prepared with both LV4 and LV5 using chloroform as matrix solvent. The solar cell structure realized with oligomer LV5, glass/ITO/LV5: [C60]PCB-C4 (1:1) has shown the best parameters.

  17. Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    International Nuclear Information System (INIS)

    Alexeev, A. N.; Krasovitsky, D. M.; Petrov, S. I.; Chaly, V. P.; Mamaev, V. V.; Sidorov, V. G.

    2015-01-01

    The specific features of how nitride HEMT heterostructures are produced by NH 3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10 8 −1 × 10 9 cm −2 . The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH 3 -MBE with an extremely high ammonia flux are demonstrated

  18. Magnetotransport, structural and optical characterization of p-type modulation doped heterostructures with high Ge content Si1-xGex channel grown by SS-MBE on Si1-yGey/Si(001) virtual substrates

    International Nuclear Information System (INIS)

    Myronov, M.

    2001-04-01

    heterostructures were obtained by a combination of resistivity and Hall effect measurements in the temperature range of 9-300K. The FTA at 600C for 30min was seen to have a negligible effect on the Hall mobility and sheet carrier density. Increasing the annealing temperature resulted in pronounced successive increases of Hall mobility accompanied by the opposite behaviour of sheet carrier density. Each sample had the optimum FTA temperature corresponded to the maximum Hall mobility. After RTA at 750C for 30sec the increase of Hall mobility for researched samples was observed as well. The highest mobility (at sheet carrier density) of 2DHG measured at 9K was observed for sample containing Ge channel grown on thick Si 0.4 Ge 0.6 linearly graded VS and corresponds to 14855cm 2 ·V -1 ·s -1 (2.87·10 12 cm -2 ). The highest Hall mobility (at sheet carrier density) measured at 293K was observed for Si 0.2 Ge 0.8 /Si 0.65 Ge 0.35 heterostructure after FTA at 750C for 30min and corresponds to 1776cm 2 ·V -1 ·s -1 (2.37·10 13 cm -2 ). To extract the drift mobility and sheet carrier density of 2DHG at temperatures up to 300K, magnetotransport measurements in magnetic fields up to 11T were performed on several heterostructures. The data were analyzed by technique of Maximum-Entropy Mobility Spectrum Analysis. The highest drift mobility (at sheet carrier density) of 2DHG at 290K was obtained for the Si 0.2 Ge 0.8 /Si 0.65 Ge 0.35 heterostructure after FTA at 750C and corresponds to 3607 cm 2 ·V -1 ·s -1 (4.94·10 12 cm -2 . Low temperature magnetotransport measurements down to 350 mK and at magnetic fields up to 11T were carried out on several heterostructures. From the temperature dependence of the Shubnikov-de Haas oscillations observed at temperatures below 20K were extracted followed parameters of 2DHG, -- effective mass, sheet carrier density, transport and quantum scattering times, and related parameters. For the Si 0.05 Ge 0.95 /Si 0.37 Ge 0.63 heterostructure was obtained the

  19. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan

    2016-10-31

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

  20. Effect of annealing on microstructure evolution in CoFeB/MgO/CoFeB heterostructures by positron annihilation

    Science.gov (United States)

    Zhao, Chong-Jun; Lu, Xiang-An; Zhao, Zhi-Duo; Li, Ming-Hua; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Zhang, Jing-Yan; Yu, Guang-Hua

    2013-09-01

    As one of the most powerful tools for investigation of defects of materials, positron annihilation spectroscopy was employed to explore the thermal effects on the film microstructure evolution in CoFeB/MgO/CoFeB heterostructures. It is found that high annealing temperature can drive vacancy defects agglomeration and ordering acceleration in the MgO barrier. Meanwhile, another important type of defects, vacancy clusters, which are formed via the agglomeration of vacancy defects in the MgO barrier after annealing, still exists inside the MgO barrier. All these behaviors in the MgO barrier could potentially impact the overall performance in MgO based magnetic tunnel junctions.