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Sample records for heterostructure bh laser

  1. Fabrication and experimental demonstration of photonic crystal laser with buried heterostructure

    DEFF Research Database (Denmark)

    Sakanas, Aurimas; Yu, Yi; Semenova, Elizaveta

    2017-01-01

    of separating active light amplification regions from passive regions for light propagation without induced absorption losses and surface recombination. The main focus of this work is the fabrication and experimental demonstration of a buried heterostructure (BH) photonic crystal laser bonded to a silicon wafer...

  2. All-MOCVD-grown BH laser on P-InP substrates

    Science.gov (United States)

    Nishimura, Tadashi; Ishimura, E.; Nakajima, Yasuo; Tada, Hitoshi; Kimura, T.; Ohkura, Y.; Goto, Katsuhiko; Omura, Etsuji; Aiga, Masao

    1993-07-01

    A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

  3. An experimental study of noise in mid-infrared quantum cascade lasers of different designs

    Science.gov (United States)

    Schilt, Stéphane; Tombez, Lionel; Tardy, Camille; Bismuto, Alfredo; Blaser, Stéphane; Maulini, Richard; Terazzi, Romain; Rochat, Michel; Südmeyer, Thomas

    2015-04-01

    We present an experimental study of noise in mid-infrared quantum cascade lasers (QCLs) of different designs. By quantifying the high degree of correlation occurring between fluctuations of the optical frequency and voltage between the QCL terminals, we show that electrical noise is a powerful and simple mean to study noise in QCLs. Based on this outcome, we investigated the electrical noise in a large set of 22 QCLs emitting in the range of 7.6-8 μm and consisting of both ridge-waveguide and buried-heterostructure (BH) lasers with different geometrical designs and operation parameters. From a statistical data processing based on an analysis of variance, we assessed that ridge-waveguide lasers have a lower noise than BH lasers. Our physical interpretation is that additional current leakages or spare injection channels occur at the interface between the active region and the lateral insulator in the BH geometry, which induces some extra noise. In addition, Schottky-type contacts occurring at the interface between the n-doped regions and the lateral insulator, i.e., iron-doped InP, are also believed to be a potential source of additional noise in some BH lasers, as observed from the slight reduction in the integrated voltage noise observed at the laser threshold in several BH-QCLs.

  4. Step-Tapered Active-Region Mid-Infrared Quantum Cascade Lasers and Novel Fabrication Processes for Buried Heterostructures

    Science.gov (United States)

    2015-07-28

    phase- locked arrays, buried heterostructures REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10. SPONSOR/MONITOR’S ACRONYM(S) ARO...to realizing BH-QCLs than the conventional process. Moreover, new processes for achieving on-chip, large-emitting aperture QCL phase- locked arrays...Hsing Hsu, Edwin Ramayya, and Tzu-Hsuan Chang. Last but not least, the author would like to thank his families, including his parents and

  5. Laser generation in opal-like single-crystal and heterostructure photonic crystals

    Science.gov (United States)

    Kuchyanov, A. S.; Plekhanov, A. I.

    2016-11-01

    This study describes the laser generation of a 6Zh rhodamine in artificial opals representing single-crystal and heterostructure films. The spectral and angular properties of emission and the threshold characteristics of generation are investigated. In the case where the 6Zh rhodamine was in a bulk opal, the so-called random laser generation was observed. In contrast to this, the laser generation caused by a distributed feedback inside the structure of the photonic bandgap was observed in photonic-crystal opal films.

  6. Use of the AlGaAs native oxide in AlGaAs-GaAs quantum well heterostructure laser devices

    International Nuclear Information System (INIS)

    Ries, M.J.; Chen, E.I.; Holonyak, Chen N. Jr.

    1995-01-01

    At atmospheric conditions high Al Composition Al x Ga 1-x As (x ≥0.7) in Al x Ga 1-x As-GaAs heterostructures is subject to failure via hydrolyzation. In contrast, open-quotes wetclose quotes oxidation at higher temperatures (≥400 degrees C) produces stable AlGaAs native oxides that prove to be useful in quantum well heterostructure devices. The open-quotes wetclose quotes oxidation process results in the conversion of high Al composition heterostructure material into a stable low refractive index, current-blocking native oxide, which can be used to define cavities and current paths. The oxidation can be used to passivate exposed Al-bearing surfaces. Its selective, anisotropic nature is also useful for the fabrication of both planar and non-planar devices, including buried-oxide heterostructures. The III-V native oxide has been used in the fabrication of single-stripe and stripe array lasers, ring lasers, coupled-cavity lasers, buried-oxide verticle cavity lasers, deep-oxide waveguides, deep-oxide lasers, and high reliability LED's. Also, the native oxide of A1As has been demonstrated in field effect transistor operation. The use of the III-V native oxide in various device applications is described

  7. Sub-monolayer Deposited InGaAs/GaAs Quantum Dot Heterostructures and Lasers

    DEFF Research Database (Denmark)

    Xu, Zhangcheng

    2004-01-01

    deposition, the deposition of a short-period InAs/GaAs superlattice on GaAs (100) surface with an InAs effective thickness of less than 1 monolayer (ML), results in the formatioin of nanometer scale (In,Ga)As QDs of a non-SK class.In this thesis, the SML InGaAs/GaAs QDs are formed by 10 cycles of alternate......The fabrication, characterization and exploitation of self-assembled quantum dot (QD) heterostructures have attracted much attention not only in basic research, but also by the promising device applications such as QD lasers. The Stranski-Krastanow (SK) growth and the submonolayer (SML) deposition...... deposition of 0.5 ML InAs and 2.5 MLGaAs. The growth, structure, and optical properties of SML InGaAs/GaAs QD heterostructures are investigated in detail. SML InGaAs/GaAs QD lasers lasing even at room temperature have been successfully realized. The gain properties of SML InGaAs QD lasers are studied...

  8. Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    OpenAIRE

    Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

    2016-01-01

    Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

  9. Melting Behavior and Thermolysis of NaBH4−Mg(BH42 and NaBH4−Ca(BH42 Composites

    Directory of Open Access Journals (Sweden)

    Morten B. Ley

    2015-04-01

    Full Text Available The physical properties and the hydrogen release of NaBH4–Mg(BH42 and NaBH4−Ca(BH42 composites are investigated using in situ synchrotron radiation powder X-ray diffraction, thermal analysis and temperature programmed photographic analysis. The composite, xNaBH4–(1 − xMg(BH42, x = 0.4 to 0.5, shows melting/frothing between 205 and 220 °C. However, the sample does not become a transparent molten phase. This behavior is similar to other alkali-alkaline earth metal borohydride composites. In the xNaBH4–(1 − xCa(BH42 system, eutectic melting is not observed. Interestingly, eutectic melting in metal borohydrides systems leads to partial thermolysis and hydrogen release at lower temperatures and the control of sample melting may open new routes for obtaining high-capacity hydrogen storage materials.

  10. Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

    International Nuclear Information System (INIS)

    Ivanov, S.V.; Toropov, A.A.; Sorokin, S.V.; Shubina, T.V.; Il'inskaya, N.D.; Lebedev, A.V.; Sedova, I.V.; Kop'ev, P.S.; Alferov, Zh.I.; Lugauer, H.-J.; Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

    1998-01-01

    High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described

  11. Organic heterostructures deposited by MAPLE on AZO substrate

    Science.gov (United States)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Stanculescu, F.; Iftimie, S.; Girtan, M.; Popescu-Pelin, G.; Socol, G.

    2017-09-01

    Organic heterostructures based on poly(3-hexylthiophene) (P3HT) and fullerene (C60) as blends or multilayer were deposited on Al:ZnO (AZO) by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. The AZO layers were obtained by Pulsed Laser Deposition (PLD) on glass substrate, the high quality of the films being reflected by the calculated figure of merit. The organic heterostructures were investigated from morphological, optical and electrical point of view by atomic force microscopy (AFM), UV-vis spectroscopy, photoluminescence (PL) and current-voltage (I-V) measurements, respectively. The increase of the C60 content in the blend heterostructure has as result a high roughness. Compared with the multilayer heterostructure, those based on blends present an improvement in the electrical properties. Under illumination, the highest current value was recorded for the heterostructure based on the blend with the higher C60 amount. The obtained results showed that MAPLE is a useful technique for the deposition of the organic heterostructures on AZO as transparent conductor electrode.

  12. Melting Behavior and Thermolysis of NaBH4−Mg(BH4)2 and NaBH4−Ca(BH4)2 Composites

    OpenAIRE

    Ley, Morten; Roedern, Elsa; Thygesen, Peter; Jensen, Torben

    2015-01-01

    The physical properties and the hydrogen release of NaBH 4 –Mg(BH 4 ) 2 and NaBH 4 −Ca(BH 4 ) 2 composites are investigated using in situ synchrotron radiation powder X-ray diffraction, thermal analysis and temperature programmed photographic analysis. The composite, x NaBH 4 –(1 − x )Mg(BH 4 ) 2 , x = 0.4 to 0.5, shows melting/frothing between 205 and 220 °C. However, the sample does not become a transparent molten phase. This behavior is similar to other alkali-alkaline earth metal borohydr...

  13. Microscopic investigation of InGaN/GaN heterostructure laser diode degradation using Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    Lochthofen, A; Mertin, W; Bacher, G; Furitsch, M; Bruederl, G; Strauss, U; Haerle, V

    2008-01-01

    We report on Kelvin probe force microscopy (KPFM) measurements on fresh and artificially aged InGaN/GaN laser test structures. In the case of an unbiased laser diode, a comparison of the surface potential between a fresh and a stressed laser diode shows a pronounced modification of the laser facet due to the aging process. Performing KPFM measurements under forward bias, a correlation between the macroscopic I-V characteristics and the microscopic voltage drop across the heterostructure layer sequence is found. This clearly demonstrates the potential of KPFM for investigating InGaN/GaN laser diode degradation

  14. GaInAsP-InP Double Heterostructure Lasers on Si Substrate Grown by LP-MOCVD

    National Research Council Canada - National Science Library

    Razeghi, M

    1993-01-01

    ... #N00014-93-1-0176 'GaInAsP-InP double heterostructure lasers on Si substrate grown by MOVCD'. In order to achieve this goal of the contract, the CQD research group split the divided research work into three phases (with specific tasks...

  15. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    International Nuclear Information System (INIS)

    Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

    2014-01-01

    We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

  16. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Science.gov (United States)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  17. Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser by Optimized Reflectivity Facet Coatings

    Science.gov (United States)

    Wang, Dong-Bo; Zhang, Jin-Chuan; Cheng, Feng-Min; Zhao, Yue; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo

    2018-02-01

    In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at 4.76 μm was fabricated through a standard buried first-order grating and buried heterostructure (BH) processing. Stable single-mode emission is achieved under all injection currents and temperature conditions without any mode hop by the optimized antireflection (AR) coating on the front facet. The AR coating consists of a double layer dielectric of Al2O3 and Ge. For a 2-mm laser cavity, the maximum output power of the AR-coated DFB-QCL was more than 170 mW at 20 °C with a high wall-plug efficiency (WPE) of 4.7% in a continuous-wave (CW) mode.

  18. Photochemistry of U(BH4)4 and U(BD4)4

    International Nuclear Information System (INIS)

    Paine, R.T.; Schonberg, P.R.; Light, R.W.; Danen, W.C.; Freund, S.M.

    1979-01-01

    U(BH 4 ) 4 and U(BD 4 ) 4 are observed to undergo complex degradation reactions promoted by broadband UV radiation. The primary products of these reactions appear to be U(BH 4 ) 3 , B 2 H 6 , H 2 , U(BD 4 ) 3 , B 2 D 6 and D 2 . Further, U(BD 4 ) 4 undergoes a related decomposition reaction under the influence of CO 2 laser irradiation at 924.97 cm -1 . (author)

  19. Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

    Science.gov (United States)

    Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

    2018-04-01

    In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

  20. Reverse spontaneous laser line sweeping in ytterbium fiber laser

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Petr; Peterka, Pavel; Honzátko, Pavel; Kubeček, V.

    2017-01-01

    Roč. 14, č. 3 (2017), č. článku 035102. ISSN 1612-2011 R&D Projects: GA ČR(CZ) GA16-13306S Institutional support: RVO:67985882 ; RVO:68378271 Keywords : laser line sweeping * ytterbium * fiber lasers Subject RIV: BH - Optics, Masers, Lasers; BH - Optics, Masers, Lasers (FZU-D) OBOR OECD: Optics (including laser optics and quantum optics); Optics (including laser optics and quantum optics) (FZU-D) Impact factor: 2.537, year: 2016

  1. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

    Science.gov (United States)

    Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Bagaev, T. A.; Andreev, A. Yu.; Telegin, K. Yu.; Lobintsov, A. V.; Davydova, E. I.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Ivanova, E. B.; Simakov, V. A.

    2017-05-01

    The results of the development and fabrication of laser diode bars (λ = 800 - 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.

  2. Laser-excited photoluminescence of three-layer GaAs double-heterostructure laser material

    International Nuclear Information System (INIS)

    Nash, F.R.; Dixon, R.W.; Barnes, P.A.; Schumaker, N.E.

    1975-01-01

    The successful fabrication of high-quality DH GaAs lasers from a simplified three-layer structure is reported. A major asset of this structure is the transparency of its final layer to recombination radiation occurring in the active layer, thus permitting the use of nondestructive photoluminescent techniques for material evaluation prior to device fabrication. In the course of photoluminescence investigations on this material the additional important observation has been made that indirect excitation (in which photocarriers are generated in the top ternary layer) has significant advantages over direct excitation (in which photocarriers are generated directly in the active layer). These include (i) the direct measurement of Al concentrations in both upper layers, (ii) the measurements of the minority-carrier diffusion length in the upper layer, (iii) an easily obtained indication of taper in the thickness of the upper layer, and (iv) surprisingly effective excitation of the active layer. By combining direct and indirect excitation it is shown that a clearer understanding of the location and detrimental influences of defects in the GaAs laser structure may be obtained. For example, the width of the region of reduced luminescence associated with many defects is found to be very excitation dependent and is confirmed to arise fr []m reduced active region luminescence. The photoluminescent excitation techniques described should be useful in the study of other heterostructure devices and material systems

  3. Semiconductor light sources fabricated by vapor phase epitaxial regrowth

    International Nuclear Information System (INIS)

    Powazinik, W.; Olshansky, R.; Meland, E.; Lauer, R.B.

    1986-01-01

    An extremely versatile technique for the fabrication of semiconductor light sources is described. The technique which is based on the halide vapor phase regrowth (VPR) of InP on channeled and selectively etched InGaAsP/InP double heterostructure material, results in a buried heterostructure (BH) index-guided VPR-BH diode laser structure which can be optimized for a number of different types of semiconductor light sources. The conditions and parameters associated with the halide VPR process are given, and the properties of the regrown InP are reported. The processing and characterization of high-frequency lasers with 18-GHz bandwidths and high-power lasers with cw single-spatial-mode powers of 60 mW are described. Additionally, the fabrication and characterization of superluminescent LEDs based on the this basic VPR-BH structure are described. These LEDs are capable of coupling more than 80 μW of optical power into a single-mode fiber at 100 mA, and can couple as much as 8 μW of optical power into a single-mode fiber at drive currents as low as 20 mA

  4. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Tomosh, K. N.; Galiev, R. R.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation); Zhukov, A. E.; Cirlin, G. E.; Zubov, F. I.; Alferov, Zh. I. [Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

    2016-10-15

    The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

  5. Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

    Science.gov (United States)

    Ladugin, M. A.; Marmalyuk, A. A.; Padalitsa, A. A.; Telegin, K. Yu; Lobintsov, A. V.; Sapozhnikov, S. M.; Danilov, A. I.; Podkopaev, A. V.; Simakov, V. A.

    2017-08-01

    The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

  6. ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures

    International Nuclear Information System (INIS)

    Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J.

    2008-01-01

    Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm 2 allowed to generate an array of 1.2x1 mm 2 sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material

  7. Vapor Pressure Measurements of LiBH4, NaBH 4 and Ca(BH4)2 using Knudsen Torsion Effusion Gravimetric Method

    Science.gov (United States)

    Danyan, Mohammad Masoumi

    Hydrogen storage is one of the critical technologies needed on the path towards commercialization for mobile applications. In the past few years, a range of new light weight hydrogen containing material has been discovered with good storage properties. Among them, lithium borohydride (LiBH 4) sodium borohydride (NaBH4) and calcium borohydride (Ca(BH 4)2) have shown promising results to be used as solid state hydrogen storage material. In this work, we have determined equilibrium vapor pressures of LiBH 4 NaBH4 and Ca(BH4)2 obtained by Torsion effusion thermogravimetric method. Results for all the three hydrides exhibited that a small fraction of the materials showed congruency, and sublimed as gaseous compound, but the majority of the material showed incongruent vaporization. Two Knudsen cells of 0.3 and 0.6mm orifice size was employed to measure the total vapor pressures. A Whitman-Motzfeldt method is used to extrapolate the measured vapor pressures to zero orifice size to calculate the equilibrium vapor pressures. In the case of LiBH4 we found that 2% of the material evaporated congruently (LiBH4(s) → LiBH4(g)) according to the equation: logPLiBH4/P 0 =-3263.5 +/-309/T + (1.079 +/-0.69) and rest as incongruent vaporization to LiH, B, and hydrogen gas according to the equation logPeq/P0 =(-3263.5 +/-309)/T+ (2.458 +/-0.69) with DeltaH evap.= 62.47+/-5.9 kJ/mol of H2, DeltaSevap. = 47.05+/-13 J/mol of H2.K. The NaBH4 also had somewhat similar behavior, with 9% congruent evaporation and equilibrium vapor pressure equation of logPLiBH4=-7700+/-335/ T+ (6.7+/-1.5) and 91% incongruent decomposition to Na and Boron metal, and hydrogen gas. The enthalpy of vaporization; DeltaHevap. = 147.2+/-6.4kJ/molH2 and DeltaSevap.= 142 +/-28 kJ/molH2.K (550-650K). The Ca(BH4) 2 exhibited similar vaporization behavior with congruency of 3.2%. The decomposition products are CaH2 and Boron metal with evolution of hydrogen gas varying with the pressure equation as logPeq /P0 =(-1562

  8. Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Ding Ying [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)]. E-mail: yingding@red.semi.ac.cn; Zhou Fan [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Chen Weixi [School of Physics, Peking University, Beijing 100871 (China); Wang Wei [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2007-01-15

    A novel unselective regrowth buried heterostructure (BH) long-wavelength superluminescent diode (SLD), which has a grade-strained bulk InGaAs active region, was developed by metalorganic vapor-phase epitaxy (MOVPE). The 3 dB emission spectrum bandwidth of the SLD is about 65 nm with the range from 1596 to 1661 nm at 90 mA and from 1585 to 1650 nm at 150 mA.An output power of 3.5 mW is obtained at 200 mA injection current under CW operation at room temperature.

  9. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

    International Nuclear Information System (INIS)

    Slipchenko, S. O.; Bondarev, A. D.; Vinokurov, D. A.; Nikolaev, D. N.; Fetisova, N. V.; Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

    2009-01-01

    Asymmetric Al 0.3 Ga 0.7 As/GaAs/InGaAs heterostructures with a broadened waveguide produced by the method of MOCVD epitaxy are studied. It is established that the precision shift of the active region to one of the cladding layers ensures the generation of the chosen mode of high order in the transverse broadened waveguide. It is experimentally established that this shift brings about an increase in internal optical losses and a decrease in the internal quantum efficiency of stimulated emission. It is shown experimentally that the shift of the active region to the n-type cladding layer governs the sublinear form of the power-current characteristic for semiconductor lasers; in the case of a shift of the active region towards the p-type cladding layer, the laser diodes demonstrated a linear dependence of optical power on the pump current in the entire range of pump currents.

  10. Photoinduced effect on carrier transport properties in La0.7Sr0.3MnO3/Si heterostructure

    International Nuclear Information System (INIS)

    Jin, K X; Tan, X Y; Chen, C L; Zhao, S G

    2008-01-01

    The photoinduced effect on carrier transport properties has been investigated in the La 0.7 Sr 0.3 MnO 3 /Si heterostructure prepared by the pulsed laser deposition method. A giant photoinduced relative change in the resistance of about 6783% in the current-perpendicular-to-plane (CPP) geometry of the heterostructure has been observed when it is irradiated by a 532 nm laser at T = 270 K. The rising time of about 100 μs in the CPP geometry of the heterostructure under modulated laser irradiation of 200 μs duration seems to be independent of temperature. This provides an innovation for potential application in functional optical and electrical devices

  11. Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment

    Energy Technology Data Exchange (ETDEWEB)

    Molaei, R.; Bayati, M. R.; Alipour, H. M.; Nori, S.; Narayan, J. [Department of Materials Science and Engineering, NC State University, EB-1, Raleigh, North Carolina 27695-7907 (United States)

    2013-06-21

    We report the formation of NiO based single crystalline p-n junctions with enhanced photocatalytic activity induced by pulsed laser irradiation. The NiO epilayers were grown on Si(001) substrates buffered with cubic yttria-stabilized zirconia (c-YSZ) by using pulsed laser deposition. The NiO/c-YSZ/Si heterostructures were subsequently laser treated by 5 pulses of KrF excimer laser (pulse duration = 25 Multiplication-Sign 10{sup -9} s) at lower energies. Microstructural studies, conducted by X-ray diffraction ({theta}-2{theta} and {phi} techniques) and high resolution transmission electron microscope, showed a cube-on-cube epitaxial relationship at the c-YSZ/Si interface; the epitaxial relationship across the NiO/c-YSZ interface was established as NiO<111 > Double-Vertical-Line Double-Vertical-Line c-YSZ<001> and in-plane NiO<110> Double-Vertical-Line Double-Vertical-Line c-YSZ<100>. Electron microscopy studies showed that the interface between the laser annealed and the pristine region as well as the NiO/c-YSZ interface was atomically sharp and crystallographically continuous. The formation of point defects, namely oxygen vacancies and NiO, due to the coupling of the laser photons with the NiO epilayers was confirmed by XPS. The p-type electrical characteristics of the pristine NiO epilayers turned to an n-type behavior and the electrical conductivity was increased by one order of magnitude after laser treatment. Photocatalytic activity of the pristine (p-NiO/c-YSZ/Si) and the laser-annealed (n-NiO/p-NiO/c-YSZ/Si) heterostructures were assessed by measuring the decomposition rate of 4-chlorophenol under UV light. The photocatalytic reaction rate constants were determined to be 0.0059 and 0.0092 min{sup -1} for the as-deposited and the laser-treated samples, respectively. The enhanced photocatalytic efficiency was attributed to the suppressed charge carrier recombination in the NiO based p-n junctions and higher electrical conductivity. Besides, the oxygen vacancies

  12. Continuous room-temperature operation of GaAs-Al/sub x/Ga1/sub -//sub x/As double-heterostructure lasers prepared by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Cho, A.Y.; Dixon, R.W.; Casey, H.C. Jr.; Hartman, R.L.

    1976-01-01

    The continuous (cw) operation at temperatures as high as 100 0 C of stripe-geometry GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers fabricated by molecular-beam epitaxial (MBE) techniques has been achieved. Improved MBE laser performance was the result of the extensive efforts to eliminate hydrocarbon and water vapor from the growth apparatus. For 12-μm-wide stripe-geometry lasers with 380-μm-long cavities, the cw threshold currents varied between 163 and 297 mA at room temperature

  13. Band alignment studies of Al2O3/CuGaO2 and ZnO/CuGaO2 hetero-structures grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ajimsha, R.S.; Das, Amit K.; Joshi, M.P.; Kukreja, L.M.

    2014-01-01

    Highlights: • Band offset studies at the interface of Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures were performed using X-ray photoelectron spectroscopy. • Valance band offsets (VBO) of these hetero-structures were obtained from respective XPS peak positions and VB spectra using Kraut's equation. • Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. • Schematic band alignment diagram for the interface of these hetero-structures has been constructed. • Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures. - Abstract: We have studied the band offset and alignment of pulsed laser deposited Al 2 O 3 /CuGaO 2 and ZnO/CuGaO 2 hetero-structures using photoelectron spectroscopy. Al 2 O 3 /CuGaO 2 interface exhibited a type I band alignment with valance band offset (VBO) of 4.05 eV whereas type II band alignment was observed in ZnO/CuGaO 2 hetero-structure with a VBO of 2.32 eV. Schematic band alignment diagram for the interface of these hetero-structures has been constructed. Band offset and alignment studies of these heterojunctions are important for gaining insight to the design of various optoelectronic devices based on such hetero-structures

  14. PbSnTe injection lasers

    International Nuclear Information System (INIS)

    Oron, M.

    1982-03-01

    Carrier confined homostructure PbSnTe lasers were developed and investigated. In this laser structure good electrical and optical confinement can be achieved by a suitable carrier concentration profile. The advantage of these lasers over PbSnTe heterostructure lasers is the perfect lattice matching between the various layers of the structure. The desired carrier concentration profile was achieved by the growth of several epitaxial layers by the LPE method on a suitable substrate. The performance of these lasers was compared with that of previous homostructure and double heterostructure lasers. (H.K.)

  15. Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

    International Nuclear Information System (INIS)

    Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P.

    1991-01-01

    Buried-heterostructure tunable PbEuSeTe/PbTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Improvements in the processing technique yielded lasers that show performance characteristics significantly better than those reported previously. A continuous wave (cw) operating temperature of 203 K was realized, which is the highest cw operating temperature ever reported for lead-chalcogenides diode lasers. This laser exhibited exceptionally low-threshold currents of 1.4 mA at 90 K and 43 mA at 160 K with single-mode operation for injection currents up to 30I th and 0.18 mW power at 100 K. The usefulness of the laser, when operating cw at 200 K, was demonstrated by the ability to perform high-resolution spectroscopy of a low-pressure CO 2 gas sample

  16. Preparation of PZT/YBCO/YAlO heterostructure thin films by KrF excimer laser ablation

    International Nuclear Information System (INIS)

    Ebihara, Kenji; Kurogi, Hiromitsu; Yamagata, Yukihiko; Ikegami, Tomoaki; Grishin, A.M.

    1998-01-01

    The perovskite oxide YBa 2 Cu 3 O 7-x (YBCO) and Pb(Zr x Ti 1-x )O 3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200--600 mTorr O 2 , 2-3J/cm 2 and 5--10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO 3 :Nd show the zero resistivity critical temperature of 82 K and excellent ferroelectric properties of remnant polarization 32 microC/cm 2 , coercive force of 80 kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed

  17. Photochemistry of U(BH/sub 4/)/sub 4/ and U(BD/sub 4/)/sub 4/

    Energy Technology Data Exchange (ETDEWEB)

    Paine, R T; Schonberg, P R; Light, R W [New Mexico Univ., Albuquerque (USA). Dept. of Chemistry; Danen, W C; Freund, S M

    1979-01-01

    U(BH/sub 4/)/sub 4/ and U(BD/sub 4/)/sub 4/ are observed to undergo complex degradation reactions promoted by broadband UV radiation. The primary products of these reactions appear to be U(BH/sub 4/)/sub 3/, B/sub 2/H/sub 6/, H/sub 2/, U(BD/sub 4/)/sub 3/, B/sub 2/D/sub 6/ and D/sub 2/. Further, U(BD/sub 4/)/sub 4/ undergoes a related decomposition reaction under the influence of CO/sub 2/ laser irradiation at 924.97 cm/sup -1/.

  18. Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation

    International Nuclear Information System (INIS)

    Bayati, M. R.; Molaei, R.; Narayan, J.; Joshi, S.; Narayan, R. J.

    2013-01-01

    We have demonstrated dark hydrophilicity of single crystalline rutile TiO 2 (100) thin films, in which rapid switching from a hydrophobic to a hydrophilic surface was achieved using nanosecond excimer laser irradiation. The TiO 2 /YSZ/Si(001) single crystalline heterostructures were grown by pulsed laser deposition and were subsequently irradiated by a single pulse of a KrF excimer laser at several energies. The wettability of water on the surfaces of the samples was evaluated. The samples were hydrophobic prior to laser annealing and turned hydrophilic after laser annealing. Superhydrophilic surfaces were obtained at higher laser energy densities (e.g., 0.32 J.cm −2 ). The stoichiometries of the surface regions of the samples before and after laser annealing were examined using XPS. The results revealed the formation of oxygen vacancies on the surface, which are surmised to be responsible for the observed superhydrophilic behavior. According to the AFM images, surface smoothening was greater in films that were annealed at higher laser energy densities. The samples exhibited hydrophobic behavior after being placed in ambient atmosphere. The origin of laser induced wetting behavior was qualitatively understood to stem from an increase of point defects near the surface, which lowered the film/water interfacial energy. This type of rapid hydrophobic/hydrophilic switching may be used to facilitate fabrication of electronic and photonic devices with novel properties.

  19. Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K

    International Nuclear Information System (INIS)

    Walpole, J.N.; Calawa, A.R.; Harman, T.C.; Groves, S.H.

    1976-01-01

    Double-heterostructure Pb/sub 1-x/Sn/sub x/Te lasers with active regions of Pb 0 . 782 Sn 0 . 218 Te have been grown by molecular-beam epitaxy which operate cw up to heat-sink temperatures of 114 0 K. Temperature tuning of the emission from 15.9 to 8.54 μm wavelength is obtained, with emission at 77 0 K near 11.5 μm. The current-voltage characteristics show an abrupt change in slope at threshold, indicating high incremental internal quantum efficiency

  20. Increasing Hydrogen Density with the Cation-Anion Pair BH4−-NH4+ in Perovskite-Type NH4Ca(BH43

    Directory of Open Access Journals (Sweden)

    Pascal Schouwink

    2015-08-01

    Full Text Available A novel metal borohydride ammonia-borane complex Ca(BH42·NH3BH3 is characterized as the decomposition product of the recently reported perovskite-type metal borohydride NH4Ca(BH43, suggesting that ammonium-based metal borohydrides release hydrogen gas via ammonia-borane-complexes. For the first time the concept of proton-hydride interactions to promote hydrogen release is applied to a cation-anion pair in a complex metal hydride. NH4Ca(BH43 is prepared mechanochemically from Ca(BH42 and NH4Cl as well as NH4BH4 following two different protocols, where the synthesis procedures are modified in the latter to solvent-based ball-milling using diethyl ether to maximize the phase yield in chlorine-free samples. During decomposition of NH4Ca(BH43 pure H2 is released, prior to the decomposition of the complex to its constituents. As opposed to a previously reported adduct between Ca(BH42 and NH3BH3, the present complex is described as NH3BH3-stuffed α-Ca(BH42.

  1. Heterostructures (CaSrBa)F2 on InP for Optoelectronics

    National Research Council Canada - National Science Library

    Pyshkin, Sergei

    1995-01-01

    .... MBE and Laser Vacuum Epitaxy (LVE) growth methods for semiconductor-semiconductor (SS) and semiconductor-crystalline dielectric-semiconductor heterostructures are considered as well as experimental facilities for these processes are elaborated.

  2. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  3. Dehydriding and rehydriding reactions of LiBH4

    International Nuclear Information System (INIS)

    Orimo, S.; Nakamori, Y.; Kitahara, G.; Miwa, K.; Ohba, N.; Towata, S.; Zuettel, A.

    2005-01-01

    Structural differences in LiBH 4 before and after the melting reaction at approximately 550-bar K were investigated to clarify the experimental method for the confirmation of reversible dehydriding and rehydriding reactions. Since the long-range order of LiBH 4 begins to disappear after the melting reaction was achieved, investigation of the atomistic vibrations of the [BH 4 ]-anion in LiBH 4 was found to be effective for the confirmation of the reversibility. In the present study, LiBH 4 was successively dehydrided (decomposed) into LiH and B under 1-bar MPa of hydrogen at 873-bar K, and then rehydrided (recombined) into LiBH 4 under 35-bar MPa of hydrogen at the same temperature (873-bar K). The temperatures at the beginning and ending of the dehydriding reaction are lowered, by approximately 30-bar K, for LiBH 4 substituted (or mixed) with Mg (atomic ratio of Li:Mg=9:1) as compared to those for LiBH 4 alone. This is similar to the tendency exhibited by LiNH 2

  4. Comparative study of LaNiO$_3$/LaAlO$_3$ heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

    OpenAIRE

    Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H. -U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

    2017-01-01

    Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity, microstructure as revealed by high-resolution transmission electron microscopy images and resistiv...

  5. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  6. Scattering (stochastic) recoupling of a coupled ten-stripe AlGaAs-GaAs-InGaAs quantum-well heterostructure laser

    Science.gov (United States)

    Kellogg, D. A.; Holonyak, N.

    2001-04-01

    Data are presented on coupled ten-stripe AlGaAs-GaAs-InGaAs quantum well heterostructure (QWH) lasers recoupled stochastically at the cleaved end mirrors. Recoupling of neighboring elements of a ten-stripe laser is accomplished by the scattering (random feedback) afforded by applying ˜10-μm-diam Al powder or 0.3 μm α-Al2O3 polishing compound in microscopy immersion oil or in epoxy at the cleaved ends (mirrors). Data on QWH samples with the end mirrors coated with the scatterer (Al or Al2O3 powder in "liquid") exhibit spectral and far-field broadening, as well as increased laser threshold because of the reduced cavity Q. Single mode operation is possible with the conventional evanescent wave coupling of the ten-stripe QWH and is destroyed, even the laser operation itself, with the scattering recoupling (dephasing) at the end mirrors, which is reversible (removable). The narrow ten-stripe QWH laser with strong end-mirror scattering, a long amplifier with random feedback, indicates that a photopumped III-V or II-VI powder (a random "wall" cavity) has little or no merit.

  7. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability

    International Nuclear Information System (INIS)

    Marmalyuk, A A; Ladugin, M A; Andreev, A Yu; Telegin, K Yu; Yarotskaya, I V; Meshkov, A S; Konyaev, V P; Sapozhnikov, S M; Lebedeva, E I; Simakov, V A

    2013-01-01

    Two series of AlGaAs/GaAs laser heterostructures have been grown by metal-organic vapour phase epitaxy, and 808-nm laser diode bars fabricated from the heterostructures have been investigated. The heterostructures differed in waveguide thickness and quantum well depth. It is shown that increasing the barrier height for charge carriers in the active region has an advantageous effect on the output parameters of the laser sources in the case of the heterostructures with a narrow symmetric waveguide: the slope of their power – current characteristics increased from 0.9 to 1.05 W A -1 . Thus, the configuration with a narrow waveguide and deep quantum well is better suited for high-power laser diode bars under hindered heat removal conditions. (lasers)

  8. AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Marmalyuk, A A; Ladugin, M A; Andreev, A Yu; Telegin, K Yu; Yarotskaya, I V; Meshkov, A S; Konyaev, V P; Sapozhnikov, S M; Lebedeva, E I; Simakov, V A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation)

    2013-10-31

    Two series of AlGaAs/GaAs laser heterostructures have been grown by metal-organic vapour phase epitaxy, and 808-nm laser diode bars fabricated from the heterostructures have been investigated. The heterostructures differed in waveguide thickness and quantum well depth. It is shown that increasing the barrier height for charge carriers in the active region has an advantageous effect on the output parameters of the laser sources in the case of the heterostructures with a narrow symmetric waveguide: the slope of their power – current characteristics increased from 0.9 to 1.05 W A{sup -1}. Thus, the configuration with a narrow waveguide and deep quantum well is better suited for high-power laser diode bars under hindered heat removal conditions. (lasers)

  9. Electron-lattice energy relaxation in laser-excited thin-film Au-insulator heterostructures studied by ultrafast MeV electron diffraction.

    Science.gov (United States)

    Sokolowski-Tinten, K; Shen, X; Zheng, Q; Chase, T; Coffee, R; Jerman, M; Li, R K; Ligges, M; Makasyuk, I; Mo, M; Reid, A H; Rethfeld, B; Vecchione, T; Weathersby, S P; Dürr, H A; Wang, X J

    2017-09-01

    We apply time-resolved MeV electron diffraction to study the electron-lattice energy relaxation in thin film Au-insulator heterostructures. Through precise measurements of the transient Debye-Waller-factor, the mean-square atomic displacement is directly determined, which allows to quantitatively follow the temporal evolution of the lattice temperature after short pulse laser excitation. Data obtained over an extended range of laser fluences reveal an increased relaxation rate when the film thickness is reduced or the Au-film is capped with an additional insulator top-layer. This behavior is attributed to a cross-interfacial coupling of excited electrons in the Au film to phonons in the adjacent insulator layer(s). Analysis of the data using the two-temperature-model taking explicitly into account the additional energy loss at the interface(s) allows to deduce the relative strength of the two relaxation channels.

  10. Ionic conductivity and the formation of cubic CaH2 in the LiBH4-Ca(BH4)2 composite

    DEFF Research Database (Denmark)

    Sveinbjörnsson, Dadi Þorsteinn; Blanchard, Didier; Mýrdal, Jón Steinar Garðarsson

    2014-01-01

    LiBH4–Ca(BH4)2 composites were prepared by ball milling. Their crystal structures and phase composition were investigated using synchrotron X-ray diffraction and Rietveld refinement, and their ionic conductivity was measured using impedance spectroscopy. The materials were found to form a physical...... treatment. Concurrent formation of elemental boron may also occur. The ionic conductivity of the composites was measured using impedance spectroscopy, and was found to be lower than that of ball milled LiBH4. Electronic band structure calculations indicate that cubic CaH2 with hydrogen defects...... is electronically conducting. Its formation along with the possible precipitation of boron therefore has an effect on the measured conductivity of the LiBH4–Ca(BH4)2 composites and may increase the risk of an internal short-circuit in the cells....

  11. A liquid-based eutectic system: LiBH4·NH 3-nNH3BH3 with high dehydrogenation capacity at moderate temperature

    KAUST Repository

    Tan, Yingbin; Guo, Yanhui; Li, Shaofeng; Sun, Weiwei; Zhu, Yihan; Li, Qi; Yu, Xuebin

    2011-01-01

    A novel eutectic hydrogen storage system, LiBH4·NH 3-nNH3BH3, which exists in a liquid state at room temperature, was synthesized through a simple mixing of LiBH 4·NH3 and NH3BH3 (AB). In the temperature range of 90-110 °C, the eutectic system

  12. Optimization problems of QW-SCH heterostructures AlGaAs/GaAs designed for working at 808 nm band

    International Nuclear Information System (INIS)

    Malag, A.; Kozlowska, A.; Strupinski, W.; Mozdzonek, M.; Dobrzanski, L.; Teodorczyk, M.; Mroziewicz, B.

    1999-01-01

    Semiconductor laser diodes (LDs) emitting in the 808 nm range found main field of application in the pumping systems of Nd 3+ :YAG lasers. Because of narrow absorption line of YAG material, narrow emission line of the laser pump exactly at the 808 nm wavelength is expected at the temperature optimised from the viewpoint of its stabilization (usually it is about 15 o C). To meet these requirements, an optimisation of the laser (AlGa)As heterostructure because of the composition and thickness of the constituent layers is necessary. In the communicate the design foundations, the characteristics of the manufactured LDs based on this design and intrinsic limitations of the possibility of 'tuning' the lasers to desired wavelength in the technological process are presented. The reported LDs are of the wide-stripe type with the Schottky-junction-isolation and have been manufactured from the MOVPE grown (Alga)As heterostructure. (author)

  13. High-power cw laser bars of the 750 – 790-nm wavelength range

    International Nuclear Information System (INIS)

    Degtyareva, N S; Kondakov, S A; Mikayelyan, G T; Gorlachuk, P V; Ladugin, M A; Marmalyuk, Aleksandr A; Ryaboshtan, Yu L; Yarotskaya, I V

    2013-01-01

    We have developed the effective design of semiconductor heterostructures, which allow one to fabricate cw laser diodes emitting in the 750 – 790-nm spectral range. The optimal conditions for fabrication of GaAsP/AlGaInP/GaAs heterostructures by MOCVD have been determined. It is shown that the use of quantum wells with a precisely defined quantity mismatch reduces the threshold current density and increases the external differential efficiency. The results of studies of characteristics of diode laser bars fabricated from these heterostructures are presented. (lasers)

  14. Theoretical investigation of structure and stability of molecules of borohydrides B2H6, AlBH6 and ScBH6

    International Nuclear Information System (INIS)

    Musaev, D.G.; Zyubin, A.S.; Charkin, O.P.; Bonakkorsi, R.; Tomazi, Ya.

    1988-01-01

    Geometry of alternative structures of M 3+ BH 6 molecules are optimized on the two-exponent bases; their energies are refined with a fuller basis DEHD taking into account electron correlation within the frames of the MP3 method. The tendencies in the change of relative energies of the structures and their stability to decomposition are analyzed. It is noted that AlBH 6 and ScBH 6 molecules are not rigid to migration of M 3+ H 2 + ''cation'' round BH 4 - anion, as well ScBH 6 molecules are flexible to rotation of H 2 Sc group round the Sc-B axis. The data are compared with the results of previous similar calculations of borohydrides of elements in the first two groups (Li-Cu and Be-Zn)

  15. Preparation of Zn(BH4)2 and diborane and hydrogen release properties of Zn(BH4)2+xMgH2 (x=1, 5, 10, and 15)

    Science.gov (United States)

    Kwak, Young Jun; Kwon, Sung Nam; Song, Myoung Youp

    2015-09-01

    Zn(BH4)2 was prepared by milling ZnCl2 and NaBH4 in a planetary ball mill under Ar atmosphere, and Zn(BH4)2+xMgH2 (x=1, 5, 10, and 15) samples were prepared. Diborane (B2H6) and hydrogen release characteristics of the Zn(BH4)2 and Zn(BH4)2+xMgH2 samples were studied. The samples synthesized by milling ZnCl2 and NaBH4 contained Zn(BH4)2 and NaCl, together with small amounts of ZnCl2 and NaBH4. We designated these samples as Zn(BH4)2(+NaCl). The weight loss up to 400 °C of the Zn(BH4)2(+NaCl) sample synthesized by milling 4 h was 11.2 wt%. FT-IR analysis showed that Zn(BH4)2 was formed in the Zn(BH4)2(+NaCl) samples. MgH2 was also milled in a planetary ball mill, and mixed with the Zn(BH4)2(+NaCl) synthesized by milling for 4 h in a mortar and pestle. The weight loss up to 400 °C of Zn(BH4)2(+NaCl)+MgH2 was 8.2 wt%, corresponding to the weight % of diborane and hydrogen released from the Zn(BH4)2(+NaCl)+MgH2 sample, with respect to the sample weight. DTA results of Zn(BH4)2(+NaCl)+xMgH2 showed that the decomposition peak of Zn(BH4)2 was at about 61 °C, and that of MgH2 was at about 370-389 °C.

  16. Amplified emission and modified spectral features in an opal hetero-structure mediated by passive defect mode localization

    Science.gov (United States)

    Rout, Dipak; Kumar, Govind; Vijaya, R.

    2018-01-01

    A photonic crystal hetero-structure consisting of a passive planar defect of SiO2 thin film sandwiched between two identical opals grown by inward growing self-assembly method using Rhodamine-B dye-doped polystyrene microspheres is studied for the characteristics of dye emission. The optical properties and the defect mode characteristics of the hetero-structure are studied from the reflection and transmission measurements. Laser-induced fluorescence from the hetero-structure showed amplified and spectrally narrowed emission compared to the photonic crystal emphasizing the role of the defect mode and distributed feedback. The enhanced emission is also complemented by the reduction in fluorescence decay time in the case of the hetero-structure in comparison to the 3D photonic crystals.

  17. A liquid-based eutectic system: LiBH4·NH 3-nNH3BH3 with high dehydrogenation capacity at moderate temperature

    KAUST Repository

    Tan, Yingbin

    2011-01-01

    A novel eutectic hydrogen storage system, LiBH4·NH 3-nNH3BH3, which exists in a liquid state at room temperature, was synthesized through a simple mixing of LiBH 4·NH3 and NH3BH3 (AB). In the temperature range of 90-110 °C, the eutectic system showed significantly improved dehydrogenation properties compared to the neat AB and LiBH 4·NH3 alone. For example, in the case of the LiBH4·NH3/AB with a mole ratio of 1:3, over 8 wt.% hydrogen could be released at 90 °C within 4 h, while only 5 wt.% hydrogen released from the neat AB at the same conditions. Through a series of experiments it has been demonstrated that the hydrogen release of the new system is resulted from an interaction of AB and the NH3 group in the LiBH4·NH3, in which LiBH4 works as a carrier of ammonia and plays a crucial role in promoting the interaction between the NH3 group and AB. The enhanced dehydrogenation of LiBH 4·NH3/AB may result from the polar liquid state reaction environments and the initially promoted formation of the diammoniate of diborane, which will facilitate the B-H⋯H-N interaction between LiBH4·NH3 and AB. Kinetics analysis revealed that the rate-controlling steps of the dehydrogenation process are three-dimensional diffusion of hydrogen at temperatures ranging from 90 to 110 °C. This journal is © The Royal Society of Chemistry.

  18. Hydrogen generation behaviors of NaBH4-NH3BH3 composite by hydrolysis

    Science.gov (United States)

    Xu, Yanmin; Wu, Chaoling; Chen, Yungui; Huang, Zhifen; Luo, Linshan; Wu, Haiwen; Liu, Peipei

    2014-09-01

    In this work, NH3BH3 (AB) is used to induce hydrogen generation during NaBH4 (SB) hydrolysis in order to reduce the use of catalysts, simplify the preparation process, reduce the cost and improve desorption kinetics and hydrogen capacity as well. xNaBH4-yNH3BH3 composites are prepared by ball-milling in different proportions (from x:y = 1:1 to 8:1). The experimental results demonstrate that all composites can release more than 90% of hydrogen at 70 °C within 1 h, and their hydrogen yields can reach 9 wt% (taking reacted water into account). Among them, the composites in the proportion of 4:1 and 5:1, whose hydrogen yields reach no less than 10 wt%, show the best hydrogen generation properties. This is due to the impact of the following aspects: AB additive improves the dispersibility of SB particles, makes the composite more porous, hampers the generated metaborate from adhering to the surface of SB, and decreases the pH value of the composite during hydrolysis. The main solid byproduct of this hydrolysis system is NaBO2·2H2O. By hydrolytic kinetic simulation of the composites, the fitted activation energies of the complexes are between 37.2 and 45.6 kJ mol-1, which are comparable to the catalytic system with some precious metals and alloys.

  19. Optical pumping of Rb by Ti:Sa laser and high-power laser diode

    Czech Academy of Sciences Publication Activity Database

    Buchta, Zdeněk; Rychnovský, Jan; Lazar, Josef

    2006-01-01

    Roč. 8, č. 1 (2006), s. 350-354 ISSN 1454-4164 R&D Projects: GA AV ČR IAA1065303; GA ČR GA102/04/2109 Institutional research plan: CEZ:AV0Z20650511 Keywords : optical pumping * Ti:Sa laser * laser diode * emission linewidth * spectroscopy * laser frequency stabilization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.106, year: 2006

  20. IZO deposited by PLD on flexible substrate for organic heterostructures

    Science.gov (United States)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Rasoga, O.; Stanculescu, F.; Socol, G.

    2017-05-01

    In:ZnO (IZO) thin films were deposited on flexible plastic substrates by pulsed laser deposition (PLD) method. The obtained layers present adequate optical and electrical properties competitive with those based on indium tin oxide (ITO). The figure of merit (9 × 10-3 Ω-1) calculated for IZO layers demonstrates that high quality coatings can be prepared by this deposition technique. A thermal annealing (150 °C for 1 h) or an oxygen plasma etching (6 mbar for 10 min.) were applied to the IZO layers to evaluate the influence of these treatments on the properties of the transparent coatings. Using vacuum evaporation, organic heterostructures based on cooper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on the untreated and treated IZO layers. The optical and electrical properties of the heterostructures were investigated by UV-Vis, FTIR and current-voltage ( I- V) measurements. For the heterostructure fabricated on IZO treated in oxygen plasma, an improvement in the current value with at least one order of magnitude was evidenced in the I- V characteristics recorded in dark conditions. Also, an increase in the current value for the heterostructure deposited on untreated IZO layer can be achieved by adding an organic layer such as tris-8-hydroxyquinoline aluminium (Alq3).

  1. High ionic conductivity in confined bismuth oxide-based heterostructures

    Directory of Open Access Journals (Sweden)

    Simone Sanna

    2016-12-01

    Full Text Available Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3 exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ, deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  2. High ionic conductivity in confined bismuth oxide-based heterostructures

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...... of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk....

  3. Non-Covalent Interactions in Hydrogen Storage Materials LiN(CH32BH3 and KN(CH32BH3

    Directory of Open Access Journals (Sweden)

    Filip Sagan

    2016-03-01

    Full Text Available In the present work, an in-depth, qualitative and quantitative description of non-covalent interactions in the hydrogen storage materials LiN(CH32BH3 and KN(CH32BH3 was performed by means of the charge and energy decomposition method (ETS-NOCV as well as the Interacting Quantum Atoms (IQA approach. It was determined that both crystals are stabilized by electrostatically dominated intra- and intermolecular M∙∙∙H–B interactions (M = Li, K. For LiN(CH32BH3 the intramolecular charge transfer appeared (B–H→Li to be more pronounced compared with the corresponding intermolecular contribution. We clarified for the first time, based on the ETS-NOCV and IQA methods, that homopolar BH∙∙∙HB interactions in LiN(CH32BH3 can be considered as destabilizing (due to the dominance of repulsion caused by negatively charged borane units, despite the fact that some charge delocalization within BH∙∙∙HB contacts is enforced (which explains H∙∙∙H bond critical points found from the QTAIM method. Interestingly, quite similar (to BH∙∙∙HB intermolecular homopolar dihydrogen bonds CH∙∙∙HC appared to significantly stabilize both crystals—the ETS-NOCV scheme allowed us to conclude that CH∙∙∙HC interactions are dispersion dominated, however, the electrostatic and σ/σ*(C–H charge transfer contributions are also important. These interactions appeared to be more pronounced in KN(CH32BH3 compared with LiN(CH32BH3.

  4. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    International Nuclear Information System (INIS)

    Veselov, D. A.; Shashkin, I. S.; Bakhvalov, K. V.; Lyutetskiy, A. V.; Pikhtin, N. A.; Rastegaeva, M. G.; Slipchenko, S. O.; Bechvay, E. A.; Strelets, V. A.; Shamakhov, V. V.; Tarasov, I. S.

    2016-01-01

    Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).

  5. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.; Lyutetskiy, A. V.; Pikhtin, N. A.; Rastegaeva, M. G.; Slipchenko, S. O.; Bechvay, E. A.; Strelets, V. A.; Shamakhov, V. V.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-09-15

    Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).

  6. Magnetotransport investigations of single- and heterostructure epitaxial films of IV/VI-semiconductors

    International Nuclear Information System (INIS)

    Ambrosch, K.-E.

    1985-01-01

    Lead salts are small gap semiconductors that are used for infrared detectors and lasers. PbMnTe and PbEuTe are semimagnetic semiconductors. Magnetotransport properties of epitaxial films and epitaxial heterostructures (PbTe / PbSnTe) are investigated. Epitaxial films of PbSnTe, PbMnTe and PbEuTe have been used for Shubnikov de Haas - experiments in tilted magnetic fields. This method allows the quantitative determination of the electric carrier distribution with respect to the crystal directions. The nonequal distribution is caused by strain effects that are more important for PbMnTe than for PbSnTe and PbEuTe. Magnetoresistance experiments show a deviation from cubic symmetry that leads to the same results for the carrier distribution as the Shubnikov de Haas effect. Magnetoresistance experiments performed with PbTe / PbSnTe heterostructures show no megnetoresistance if the magnetic field is in plane with the layers. The difference of the magnetoresistance for single films and heterostructures is explained by 'quasitwodimensional' carriers. Shubnikov de Haas experiments performed on heterostructures as a function of the tilt angle of the magnetic field show different behaviour compared to that of single films. Using additional information about effective masses and strain it was possible to distinguish between 'two-' and 'threedimensional' electronic systems. The distribution of carriers in single films and heterostructures has been determined by means of magnetotransport experiments. The results are explained by strain effects of the crystal lattice. In addition heterostructures show a 'quasitwodimensional' behaviour caused by interaction of their layers. (Author)

  7. Radio frequency regenerative oscillations in monolithic high-Q/V heterostructured photonic crystal cavities

    International Nuclear Information System (INIS)

    Yang, Jinghui; Gu, Tingyi; Zheng, Jiangjun; Wei Wong, Chee; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

    2014-01-01

    We report temporal and spectral domain observation of regenerative oscillation in monolithic silicon heterostructured photonic crystals cavities with high quality factor to mode volume ratios (Q/V). The results are interpreted by nonlinear coupled mode theory (CMT) tracking the dynamics of photon, free carrier population, and temperature variations. We experimentally demonstrate effective tuning of the radio frequency tones by laser-cavity detuning and laser power levels, confirmed by the CMT simulations with sensitive input parameters

  8. Molecular rectification modulated by alternating boron and nitrogen co-doping in a combined heterostructure of two zigzag-edged trigonal graphenes

    International Nuclear Information System (INIS)

    Wang, Li-hua; Sun, Yan; Zhang, Zi-zhen; Ding, Bing-jun; Guo, Yong

    2014-01-01

    The rectifying properties of a heterostructure combined with two trigonal graphenes are investigated by first-principles approach. The graphenes have left (left and right) vertical benzenes substituted with alternating nitrogen and boron atoms. The results indicate that co-doping atoms have distinct influences on the rectifying performance of such devices. When the left trigonal graphene is doped and two trigonal graphenes are bound through a BH pair, a reverse rectifying behavior can be observed. However, a forward rectifying behavior is observed when they are bound through an NH (NB) pair. The rectifying effect is more prominent for the NB pair.

  9. Fabrication and characterization of InP fresnel microlenses

    International Nuclear Information System (INIS)

    Diadiuk, V.; Walpole, J.N.; Liau, Z.L.

    1987-01-01

    Since diode lasers typically have a beam divergence of a few tens of degrees, collimating the laser outputs leads to greatly far-field patterns, which, in turn translates into more power in the main lobe of the combined output. Achieving this collimation in the case of a diode laser array, with its small device-to-device distance, requires an array of similarly spaced microlenses with very short focal length, small diameter and small F number. In this paper, the authors describe the fabrication and performance of a Fresnel microlens array etched directly in InP wafers; these microlenses have been used successfully to collimate the output of GainAsP/InP buried-heterostructure (BH) diode lasers

  10. Electric field effects in graphene/LaAlO3/SrTiO3 heterostructures and nanostructures

    Directory of Open Access Journals (Sweden)

    Mengchen Huang

    2015-06-01

    Full Text Available We report the development and characterization of graphene/LaAlO3/SrTiO3 heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO3/SrTiO3 interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO3/SrTiO3-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.

  11. Dehydrogenation mechanism of LiBH{sub 4} by Poly(methyl methacrylate)

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jianmei [School of Materials Science and Engineering, and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510641 (China); China-Australia Joint Laboratory for Energy & Environmental Materials, South China University of Technology, Guangzhou 510641 (China); Yan, Yurong [School of Materials Science and Engineering, and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510641 (China); Ouyang, Liuzhang, E-mail: meouyang@scut.edu.cn [School of Materials Science and Engineering, and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510641 (China); China-Australia Joint Laboratory for Energy & Environmental Materials, South China University of Technology, Guangzhou 510641 (China); Key Laboratory for Fuel Cell Technology in Guangdong Province, South China University of Technology, Guangzhou 510641 (China); Wang, Hui [School of Materials Science and Engineering, and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510641 (China); China-Australia Joint Laboratory for Energy & Environmental Materials, South China University of Technology, Guangzhou 510641 (China); Zhu, Min, E-mail: memzhu@scut.edu.cn [School of Materials Science and Engineering, and Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510641 (China); China-Australia Joint Laboratory for Energy & Environmental Materials, South China University of Technology, Guangzhou 510641 (China)

    2015-10-05

    Highlights: • LiBH{sub 4} is amorphous after modified with PMMA. • Dehydrogenation temperature of LiBH{sub 4} decreases by 120 °C after modifying with PMMA. • The LiBH{sub 4}@PMMA composite releases 10 wt.% hydrogen at 360 °C within 1 h. • C=O group of PMMA weakens the B−H bonds to lower dehydrogenation temperature. - Abstract: We investigated the dehydrogenation properties and mechanism of Poly(methyl methacrylate) (PMMA) confined LiBH{sub 4}. Thermal stability of LiBH{sub 4} was reduced by PMMA, with a decrease in dehydrogenation temperature by 120 °C. At 360 °C, the composite showed fast dehydrogenation kinetics with 10 wt.% of hydrogen released within 1 h. The improved dehydrogenation performance was mainly attributed to the reaction between LiBH{sub 4} and PMMA forming Li{sub 3}BO{sub 3} as a final product. Furthermore, the presence of electrostatic interaction between B atom of LiBH{sub 4} and O atom in the carbonyl group of PMMA may weaken the B−H bonding of [BH{sub 4}]{sup −} and lower the hydrogen desorption temperature.

  12. Absolute Distance Measurements with Tunable Semiconductor Laser

    Czech Academy of Sciences Publication Activity Database

    Mikel, Břetislav; Číp, Ondřej; Lazar, Josef

    T118, - (2005), s. 41-44 ISSN 0031-8949 R&D Projects: GA AV ČR(CZ) IAB2065001 Keywords : tunable laser * absolute interferometer Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.661, year: 2004

  13. Fourier-limited seeded soft x-ray laser pulse

    Czech Academy of Sciences Publication Activity Database

    Guilbaud, O.; Tissandier, F.; Goddet, J-P.; Ribière, M.; Sebban, S.; Gautier, J.; Joyeux, D.; Ros, D.; Cassou, K.; Kazamias, S.; Klisnick, A.; Habib, J.; Zeitoun, P.; Benredjem, D.; Mocek, Tomáš; Nejdl, Jaroslav; De Rossi, S.; Maynard, G.; Cros, B.; Boudaa, A.; Calisti, A.

    2010-01-01

    Roč. 35, č. 9 (2010), s. 1326-1328 ISSN 0146-9592 Grant - others:AVČR(CZ) M100100911 Institutional research plan: CEZ:AV0Z10100523 Keywords : lasers and laser optics * UV * EUV * x-ray lasers * spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.316, year: 2010

  14. Interaction of laser radiation with a low-density structured absorber

    Czech Academy of Sciences Publication Activity Database

    Rozanov, V. B.; Barishpol’tsev, D.V.; Vergunova, G.A.; Demchenko, N. N.; Ivanov, E.M.; Aristova, E.N.; Zmitrenko, N.V.; Limpouch, I.; Ullschmied, Jiří

    2016-01-01

    Roč. 122, č. 2 (2016), s. 256-276 ISSN 1063-7761 Institutional support: RVO:61389021 Keywords : laser radiation interaction * laser with low-density Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.196, year: 2016

  15. Hindered rotational energy barriers of BH4- tetrahedra in β-Mg(BH4)2 from quasielastic neutron scattering and DFT calculations

    DEFF Research Database (Denmark)

    Blanchard, Didier; Maronsson, Jon Bergmann; Riktor, M.D.

    2012-01-01

    , around the 2-fold (C2) and 3-fold (C3) axes were observed at temperatures from 120 to 440 K. The experimentally obtained activation energies (EaC2 = 39 and 76 meV and EaC3 = 214 meV) and mean residence times between reorientational jumps are comparable with the energy barriers obtained from DFT......In this work, hindered rotations of the BH4- tetrahedra in Mg(BH4)2 were studied by quasielastic neutron scattering, using two instruments with different energy resolution, in combination with density functional theory (DFT) calculations. Two thermally activated reorientations of the BH4- units...... calculations. A linear dependency of the energy barriers for rotations around the C2 axis parallel to the Mg-Mg axis with the distance between these two axes was revealed by the DFT calculations. At the lowest temperature (120 K) only 15% of the BH4- units undergo rotational motion and from comparison with DFT...

  16. BH3-only proteins and BH3 mimetics induce autophagy by competitively disrupting the interaction between Beclin 1 and Bcl-2/Bcl-X(L).

    Science.gov (United States)

    Maiuri, Maria Chiara; Criollo, Alfredo; Tasdemir, Ezgi; Vicencio, José Miguel; Tajeddine, Nicolas; Hickman, John A; Geneste, Olivier; Kroemer, Guido

    2007-01-01

    Beclin 1 has recently been identified as novel BH3-only protein, meaning that it carries one Bcl-2-homology-3 (BH3) domain. As other BH3-only proteins, Beclin 1 interacts with anti-apoptotic multidomain proteins of the Bcl-2 family (in particular Bcl-2 and its homologue Bcl-X(L)) by virtue of its BH3 domain, an amphipathic alpha-helix that binds to the hydrophobic cleft of Bcl-2/Bcl-X(L). The BH3 domains of other BH3-only proteins such as Bad, as well as BH3-mimetic compounds such as ABT737, competitively disrupt the inhibitory interaction between Beclin 1 and Bcl-2/Bcl-X(L). This causes autophagy of mitochondria (mitophagy) but not of the endoplasmic reticulum (reticulophagy). Only ER-targeted (not mitochondrion-targeted) Bcl-2/Bcl-X(L) can inhibit autophagy induced by Beclin 1, and only Beclin 1-Bcl-2/Bcl-X(L) complexes present in the ER (but not those present on heavy membrane fractions enriched in mitochondria) are disrupted by ABT737. These findings suggest that the Beclin 1-Bcl-2/Bcl-X(L) complexes that normally inhibit autophagy are specifically located in the ER and point to an organelle-specific regulation of autophagy. Furthermore, these data suggest a spatial organization of autophagy and apoptosis control in which BH3-only proteins exert two independent functions. On the one hand, they can induce apoptosis, by (directly or indirectly) activating the mitochondrion-permeabilizing function of pro-apoptotic multidomain proteins from the Bcl-2 family. On the other hand, they can activate autophagy by liberating Beclin 1 from its inhibition by Bcl-2/Bcl-X(L) at the level of the endoplasmic reticulum.

  17. Pulsed Laser Deposition: passive and active waveguides

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Flory, F.; Escoubas, L.

    2009-01-01

    Roč. 34, č. 4 (2009), s. 438-449 ISSN 0268-1900 R&D Projects: GA ČR GA202/06/0216 Institutional research plan: CEZ:AV0Z10100522 Keywords : PLD * pulsed laser deposition * laser ablation * passive waveguides * active waveguides * waveguide laser * sensors * thin films * butane detection Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.384, year: 2009

  18. Tunable multichannel filter in photonic crystal heterostructure containing permeability-negative materials

    International Nuclear Information System (INIS)

    Hu Xiaoyong; Liu Zheng; Gong Qihuang

    2008-01-01

    A tunable multichannel filter is demonstrated theoretically based on a one-dimensional photonic crystal heterostructure containing permeability-negative material. The filtering properties of the photonic crystal filter, including the channel number and frequency, can be tuned by adjusting the structure parameters or by a pump laser. The angular response of the photonic crystal filter and the influences of the losses on the filtering properties are also analyzed

  19. Tunable multichannel filter in photonic crystal heterostructure containing permeability-negative materials

    Energy Technology Data Exchange (ETDEWEB)

    Hu Xiaoyong [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)], E-mail: xiaoyonghu@pku.edu.cn; Liu Zheng [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Gong Qihuang [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)], E-mail: qhgong@pku.edu.cn

    2008-01-14

    A tunable multichannel filter is demonstrated theoretically based on a one-dimensional photonic crystal heterostructure containing permeability-negative material. The filtering properties of the photonic crystal filter, including the channel number and frequency, can be tuned by adjusting the structure parameters or by a pump laser. The angular response of the photonic crystal filter and the influences of the losses on the filtering properties are also analyzed.

  20. Self-swept holmium fiber laser near 2100 nm

    Czech Academy of Sciences Publication Activity Database

    Aubrecht, Jan; Peterka, Pavel; Koška, Pavel; Podrazký, Ondřej; Todorov, Filip; Honzátko, Pavel; Kašík, Ivan

    2017-01-01

    Roč. 25, č. 4 (2017), s. 4120-4125 ISSN 1094-4087 R&D Projects: GA ČR(CZ) GA16-13306S Institutional support: RVO:67985882 Keywords : Fiber lasers * Fourier transform infrared spectrometer * Laser wavelength Subject RIV: BH - Optics , Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics ) Impact factor: 3.307, year: 2016

  1. Transition-metal dichalcogenides heterostructure saturable absorbers for ultrafast photonics.

    Science.gov (United States)

    Chen, Hao; Yin, Jinde; Yang, Jingwei; Zhang, Xuejun; Liu, Mengli; Jiang, Zike; Wang, Jinzhang; Sun, Zhipei; Guo, Tuan; Liu, Wenjun; Yan, Peiguang

    2017-11-01

    In this Letter, high-quality WS 2 film and MoS 2 film were vertically stacked on the tip of a single-mode fiber in turns to form heterostructure (WS 2 -MoS 2 -WS 2 )-based saturable absorbers with all-fiber integrated features. Their nonlinear saturable absorption properties were remarkable, such as a large modulation depth (∼16.99%) and a small saturable intensity (6.23  MW·cm -2 ). Stable pulses at 1.55 μm with duration as short as 296 fs and average power as high as 25 mW were obtained in an erbium-doped fiber laser system. The results demonstrate that the proposed heterostructures own remarkable nonlinear optical properties and offer a platform for adjusting nonlinear optical properties by stacking different transition-metal dichalcogenides or modifying the thickness of each layer, paving the way for engineering functional ultrafast photonics devices with desirable properties.

  2. Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow-green spectral region

    Energy Technology Data Exchange (ETDEWEB)

    Lutsenko, E V; Voinilovich, A G; Rzheutskii, N V; Pavlovskii, V N; Yablonskii, G P; Sorokin, S V; Gronin, S V; Sedova, I V; Kop' ev, Petr S; Ivanov, Sergei V; Alanzi, M; Hamidalddin, A; Alyamani, A

    2013-05-31

    The room temperature laser generation in the yellow-green ({lambda} = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as {lambda} = 566.7 nm at a laser cavity length of 945 {mu}m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency ({approx}60%) were obtained at a cavity length of 435 {mu}m. Both a high quality of the laser heterostructure and a low lasing threshold ({approx}2 kW cm{sup -2}) make it possible to use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of {approx}90 mW at {lambda} = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package. (semiconductor lasers. physics and technology)

  3. Second generation X-ray lasers

    Czech Academy of Sciences Publication Activity Database

    Fajardo, M.; Zeitoun, P.; Faivre, G.; Sebban, S.; Mocek, Tomáš; Hallou, A.; Aubert, D.; Balcou, P.; Burgy, F.; Douillet, D.; Mercere, P.; Morlens, A.S.; Rousseau, J. P.; Valentin, C.; Kazamias, S.; de Lachéze-Murel, G.; Lefrou, T.; Merdji, H.; Le Pape, S.; Ravet, M.F.; Delmotte, F.; Gautier, J.

    2006-01-01

    Roč. 99, 1-3 (2006), s. 142-152 ISSN 0022-4073 Grant - others:NEST-ADVENTURE FP6 EC(XE) project 012841 (TUIXS) Institutional research plan: CEZ:AV0Z10100523 Keywords : X-ray laser * amplification * high harmonic generation * optical field ionization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.599, year: 2006

  4. Characterization of electron-deficient chemical bonding of diborane with attosecond electron wavepacket dynamics and laser response

    International Nuclear Information System (INIS)

    Yonehara, Takehiro; Takatsuka, Kazuo

    2009-01-01

    We report a theoretical study of non-adiabatic electrons-nuclei coupled dynamics of diborane H 2 BH 2 BH 2 under several types of short pulse lasers. This molecule is known to have particularly interesting geometrical and electronic structures, which originate from the electron-deficient chemical bondings. We revisit the chemical bonding of diborane from the view point of electron wavepacket dynamics coupled with nuclear motions, and attempt to probe the characteristics of it by examining its response to intense laser fields. We study in the following three aspects, (i) bond formation of diborane by collision between two monoboranes, (ii) attosecond electron wavepacket dynamics in the ground state and first excited state by circularly polarized laser pulse, and (iii) induced fragmentation back to monoborane molecules by linearly polarized laser. The wave lengths of two types of laser field employed are 200 nm (in UV range) and 800 nm (in IR range), and we track the dynamics from hundreds of attoseconds up to few tens of femtoseconds. To this end, we apply the ab initio semiclassical Ehrenfest theory, into which the classical vector potential of a laser field is introduced. Basic features of the non-adiabatic response of electrons to the laser fields is elucidated in this scheme. To analyze the electronic wavepackets thus obtained, we figure out bond order density that is a spatial distribution of the bond order and bond order flux density arising only from the bonding regions, and so on. Main findings in this work are: (i) dimerization of monoboranes to diborane is so efficient that even intense laser is hard to prevent it; (ii) collective motions of electron flux emerge in the central BHHB bonding area in response to the circularly polarized laser fields; (iii) laser polarization with the direction of central two BH bonding vector is efficient for the cleavage of BH 3 -BH 3 ; and (iv) nuclear derivative coupling plays a critical role in the field induced

  5. Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

    Science.gov (United States)

    Capasso, Federico

    2010-02-01

    Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

  6. Fluoride substitution in LiBH4; destabilization and decomposition

    DEFF Research Database (Denmark)

    Richter, Bo; Ravnsbaek, Dorthe B.; Sharma, Manish

    2017-01-01

    Fluoride substitution in LiBH4 is studied by investigation of LiBH4-LiBF4 mixtures (9:1 and 3:1). Decomposition was followed by in situ synchrotron radiation X-ray diffraction (in situ SR-PXD), thermogravimetric analysis and differential scanning calorimetry with gas analysis (TGA/DSC-MS) and in ......Fluoride substitution in LiBH4 is studied by investigation of LiBH4-LiBF4 mixtures (9:1 and 3:1). Decomposition was followed by in situ synchrotron radiation X-ray diffraction (in situ SR-PXD), thermogravimetric analysis and differential scanning calorimetry with gas analysis (TGA...

  7. Characteristics of Al Alloy as a Material for Hydrolysis Reactor of NaBH4

    International Nuclear Information System (INIS)

    Jung, Hyeon-Seong; Oh, Sung-June; Jeong, Jae-Jin; Na, Il-Chai; Chu, Cheun-Ho; Park, Kwon-Pil; Chu, Cheun-Ho

    2015-01-01

    Aluminum alloy was examined as a material of low weight reactor for hydrolysis of NaBH 4 . Aluminum is dissolved with alkali, but there is NaOH as a stabilizer in NaBH 4 solution. To decrease corrosion rate of aluminum, decrease NaOH concentration and this result in loss of NaBH 4 during storage of NaBH 4 solution. Therefore stability of NaBH 4 and corrosion of aluminum should be considered in determining the optimum NaOH concentration. NaBH 4 stability and corrosion rate of aluminum were measured by hydrogen evolution rate. NaBH 4 stability was tested at 20-50 .deg. C and aluminum corrosion was measured at 60-90 .deg. C. The optimum concentration of NaOH was 0.3 wt%, considering both NaBH 4 stability and aluminun corrosion. NaBH 4 hydrolysis reaction continued 200min in aluminum No 6061 alloy reactor with 0.3 wt% NaOH at 80-90 .deg. C.

  8. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  9. Thermal properties of high-power diode lasers investigated by means of high resolution thermography

    International Nuclear Information System (INIS)

    Kozłowska, Anna; Maląg, Andrzej; Dąbrowska, Elżbieta; Teodorczyk, Marian

    2012-01-01

    In the present work, thermal effects in high-power diode lasers are investigated by means of high resolution thermography. Thermal properties of the devices emitting in the 650 nm and 808 nm wavelength ranges are compared. The different versions of the heterostructure design are analyzed. The results show a lowering of active region temperature for diode lasers with asymmetric heterostructure scheme with reduced quantum well distance from the heterostructure surface (and the heat sink). Optimization of technological processes allowed for the improvement of the device performance, e.g. reduction of solder non-uniformities and local defect sites at the mirrors which was visualized by the thermography.

  10. New fundamental experimental studies on α-Mg(BH4)2 and other borohydrides

    International Nuclear Information System (INIS)

    Hagemann, Hans; D'Anna, Vincenza; Rapin, Jean-Philippe; Cerny, Radovan; Filinchuk, Yaroslav; Kim, Ki Chul; Sholl, David S.; Parker, Stewart F.

    2011-01-01

    Research highlights: → Eutectic behavior is observed in the LiBH4 -Mg(BH4)2 system. → New INS data show good agreement with theoretical DFT calculations. → Temperature dependent Raman spectra complement previous NMR studies. - Abstract: Several new studies of Mg(BH 4 ) 2 are reported. A 1:1 LiBH 4 :Mg(BH 4 ) 2 mixture was studied by in situ synchrotron X-ray diffraction and reveals an eutectic behavior with the eutectic composition more rich in Mg(BH 4 ) 2 , and the eutectic temperature lower than 456 K. No dual cation compound was observed in this experiment. New vibrational spectra including INS data have been obtained and are compared with theoretical DFT calculations and recent NMR studies, showing good agreement.

  11. Optical and mode-locking properties of InGaN/GaN based hetero-structures

    International Nuclear Information System (INIS)

    Irshad, A.

    2011-01-01

    Short wavelength pulsed lasers are indispensable for high density and high speed optical data acquisition, storage and transfer applications. Passively mode-locked blue lasers are an attractive alternative for blue laser sources achieved by non-linear frequency conversion techniques. Although over the recent years it has been shown that InGaN/GaN based hetero-structures can be used as potential material for the fabrication of saturable absorbers, passive mode-locking in the blue spectral range has not been realized yet. The main reason for that is the complicated microscopic nature of InGaN/GaN materials and the difficulty to control the dynamics of photo-induced carriers which determine mode-locking properties of the material. In this work, we have characterized different InGaN based hetero-structures as potential saturable absorbers. Three different groups of the samples have been investigated: i) quantum well samples with different numbers of quantum wells grown under optimal conditions; ii)quantum well samples with modified optical properties due to different buffer layer thickness and postgrowth treatment; iii) a multilayered quantum dot sample. The characterized quantum well samples exhibit relatively high optical quality and sufficiently high saturable losses (which can be controlled by alternating a number of the quantum wells). Nevertheless, they have two major disadvantages as saturable absorbers, namely, a very long absorption recovery time (in the order of a few nanoseconds) and a rather high saturation fluence. The long recovery times are not desirable for achieving a stable and self-starting mode-locking without Q-switching. In order to understand the relaxation processes of photo-induced carriers that determine the absorption recovery times of the saturable absorbers, optical properties of the hetero-structures have been extensively studied by using the frequency and time resolved photo-luminescence technique. The obtained data reveal that, directly

  12. Electrically Injected UV-Visible Nanowire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  13. Photoluminescence measurements of ZnO heterostructures

    International Nuclear Information System (INIS)

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  14. Li7(BH)5(+): a new thermodynamically favored star-shaped molecule.

    Science.gov (United States)

    Torres-Vega, Juan J; Vásquez-Espinal, Alejandro; Beltran, Maria J; Ruiz, Lina; Islas, Rafael; Tiznado, William

    2015-07-15

    The potential energy surfaces (PESs) of Lin(BH)5(n-6) systems (where n = 5, 6, and 7) were explored using the gradient embedded genetic algorithm (GEGA) program, in order to find their global minima conformations. This search predicts that the lowest-energy isomers of Li6(BH)5 and Li7(BH)5(+) contain a (BH)5(6-) pentagonal fragment, which is isoelectronic and structurally analogous to the prototypical aromatic hydrocarbon anion C5H5(-). Li7(BH)5(+), along with Li7C5(+), Li7Si5(+) and Li7Ge5(+), joins a select group of clusters that adopt a seven-peak star-shape geometry, which is favored by aromaticity in the central five-membered ring, and by the preference of Li atoms for bridging positions. The theoretical analysis of chemical bonding, based on magnetic criteria, supports the notion that electronic delocalization is an important stabilization factor in all these star-shaped clusters.

  15. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    International Nuclear Information System (INIS)

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-01-01

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  16. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Barnali; Sarkar, Utpal, E-mail: utpalchemiitkgp@yahoo.com

    2016-10-20

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  17. Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures

    Directory of Open Access Journals (Sweden)

    Luis Zamora-Peredo

    2016-01-01

    Full Text Available Photoreflectance (PR and Raman are two very useful spectroscopy techniques that usually are used to know the surface electronic states in GaAs-based semiconductor devices. However, although they are exceptional tools there are few reports where both techniques were used in these kinds of devices. In this work, the surface electronic states on AlGaAs/GaAs heterostructures were studied in order to identify the effect of factors like laser penetration depth, cap layer thickness, and surface passivation over PR and Raman spectra. PR measurements were performed alternately with two lasers (532 nm and 375 nm wavelength as the modulation sources in order to identify internal and surface features. The surface electric field calculated by PR analysis decreased whereas the GaAs cap layer thickness increased, in good agreement with a similar behavior observed in Raman measurements (IL-/ILO ratio. When the heterostructures were treated by Si-flux, these techniques showed contrary behaviors. PR analysis revealed a diminution in the surface electric field due to a passivation process whereas the IL-/ILO ratio did not present the same behavior because it was dominated by the depletion layers width (cap layer thickness and the laser penetration depth.

  18. Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Y. C.; Gao, J., E-mail: jugao@hku.hk [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu (China)

    2016-08-22

    Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

  19. Hydrolysis mechanism of BH4- in moist acetonitrile. III. Kinetic isotope effects

    International Nuclear Information System (INIS)

    Meeks, B.S. Jr.; Kreevoy, M.M.

    1979-01-01

    The present work and a concurrent paper show that, in the presence of acetic acid, BH 4 - in acetonitrile is rapidly converted to BH 3 OCOCH 3 - and that previous kinetic studies of the hydrolysis of BH 4 - in such solutions actually referred to the hydrolysis of BH 3 OCOCH 3 - . As previously shown, the substrate (now shown to be BH 3 OCOCH 3 - ) complexes with acetic acid, with a complexing constant of about 160. That complex hydrolyzes by spontaneous and water-catalyzed paths. The present paper shows that the latter reaction is accelerated 15 to 40% by the substitution of D for H on boron. The rate is reduced, by a factor of approx. 1.75, by replacing all the hydroxylic hydrogen with deuterium. These results are consistent with BH 3 OC(CH 3 )O . HOCOCH 3 as the acetic acid-substrate complex. The displacement of the incipient biacetate ion by water is rate determining in this process. Isotopic substitution at either position reduces the rate of the spontaneous process. Its mechanism is uncertain. 2 figures, 3 tables

  20. Lateral topological crystalline insulator heterostructure

    Science.gov (United States)

    Sun, Qilong; Dai, Ying; Niu, Chengwang; Ma, Yandong; Wei, Wei; Yu, Lin; Huang, Baibiao

    2017-06-01

    The emergence of lateral heterostructures fabricated by two-dimensional building blocks brings many exciting realms in material science and device physics. Enriching available nanomaterials for creating such heterostructures and enabling the underlying new physics is highly coveted for the integration of next-generation devices. Here, we report a breakthrough in lateral heterostructure based on the monolayer square transition-metal dichalcogenides MX2 (M  =  W, X  =  S/Se) modules. Our results reveal that the MX2 lateral heterostructure (1S-MX2 LHS) can possess excellent thermal and dynamical stability. Remarkably, the highly desired two-dimensional topological crystalline insulator phase is confirmed by the calculated mirror Chern number {{n}\\text{M}}=-1 . A nontrivial band gap of 65 meV is obtained with SOC, indicating the potential for room-temperature observation and applications. The topologically protected edge states emerge at the edges of two different nanoribbons between the bulk band gap, which is consistent with the mirror Chern number. In addition, a strain-induced topological phase transition in 1S-MX2 LHS is also revealed, endowing the potential utilities in electronics and spintronics. Our predictions not only introduce new member and vitality into the studies of lateral heterostructures, but also highlight the promise of lateral heterostructure as appealing topological crystalline insulator platforms with excellent stability for future devices.

  1. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  2. Characteristics of Al Alloy as a Material for Hydrolysis Reactor of NaBH{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Hyeon-Seong; Oh, Sung-June; Jeong, Jae-Jin; Na, Il-Chai; Chu, Cheun-Ho; Park, Kwon-Pil [Sunchon National University, Suncheon (Korea, Republic of); Chu, Cheun-Ho [ETIS Co, Gimpo (Korea, Republic of)

    2015-12-15

    Aluminum alloy was examined as a material of low weight reactor for hydrolysis of NaBH{sub 4}. Aluminum is dissolved with alkali, but there is NaOH as a stabilizer in NaBH{sub 4} solution. To decrease corrosion rate of aluminum, decrease NaOH concentration and this result in loss of NaBH{sub 4} during storage of NaBH{sub 4} solution. Therefore stability of NaBH{sub 4} and corrosion of aluminum should be considered in determining the optimum NaOH concentration. NaBH{sub 4} stability and corrosion rate of aluminum were measured by hydrogen evolution rate. NaBH{sub 4} stability was tested at 20-50 .deg. C and aluminum corrosion was measured at 60-90 .deg. C. The optimum concentration of NaOH was 0.3 wt%, considering both NaBH{sub 4} stability and aluminun corrosion. NaBH{sub 4} hydrolysis reaction continued 200min in aluminum No 6061 alloy reactor with 0.3 wt% NaOH at 80-90 .deg. C.

  3. Structural Phase Transitions of Mg(BH4)2 under Pressure

    International Nuclear Information System (INIS)

    George, L.; Drozd, V.; Saxena, S.; Bardaji, E.; Fichtner, M.

    2009-01-01

    The structural stability of Mg(BH4)2, a promising hydrogen storage material, under pressure has been investigated in a diamond anvil cell up to 22 GPa with combined synchrotron X-ray diffraction and Raman spectroscopy. The analyses show a structural phase transition around 2.5 GPa and again around 14.4 GPa. An ambient-pressure phase of Mg(BH4)2 has a hexagonal structure (space group P61, a = 10.047(3) A, c = 36.34(1) A, and V = 3176(1) A3 at 0.2 GPa), which agrees well with early reports. The structure of high-pressure phase is found to be different from reported theoretical predictions; it also does not match the high-temperature phase. The high-pressure polymorph of Mg(BH4)2 is found to be stable on decompression, similar to the case of the high-temperature phase. Raman spectroscopic study shows a similarity in high-pressure behavior of as-prepared Mg(BH4)2 and its high-temperature phase.

  4. Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells

    DEFF Research Database (Denmark)

    Dorozhkin, S.I.; Timofeev, V.B.; Hvam, Jørn Märcher

    2001-01-01

    Abrupt changes in the capacitance between the p and n regions were observed in a planar p-i-n GaAs/AlGaAs heterostructure with two tunneling-coupled quantum wells exposed to laser irradiation (lambda = 633 nm). These changes can be caused by variations in both temperature (in the vicinity of T...

  5. Analysis of processes participating during intense iodine-laser-beam interactions with laser-produced plasmas

    Czech Academy of Sciences Publication Activity Database

    Láska, Leoš; Badziak, J.; Jungwirth, Karel; Kalal, M.; Krása, Josef; Krouský, Eduard; Kubeš, P.; Margarone, Daniele; Parys, P.; Pfeifer, Miroslav; Rohlena, Karel; Rosinski, M.; Ryč, L.; Skála, Jiří; Torrisi, L.; Ullschmied, Jiří; Velyhan, Andriy; Wolowski, J.

    2010-01-01

    Roč. 165, 6-10 (2010), s. 463-471 ISSN 1042-0150 R&D Projects: GA MŠk(CZ) LC528; GA AV ČR IAA100100715 EU Projects: European Commission(XE) 228334 - LASERLAB-EUROPE Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser plasma * non-linear processes * magnetic self-focusing * pinching Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.660, year: 2010

  6. Effect of laser beam focus position on ion emission from plasmas produced by picosecond and sub-nanosecond laser pulses from solid targets

    Czech Academy of Sciences Publication Activity Database

    Woryna, E.; Badziak, J.; Makowski, J.; Parys, P.; Wolowski, J.; Krása, Josef; Láska, Leoš; Rohlena, Karel; Vankov, A. B.

    2001-01-01

    Roč. 31, č. 4 (2001), s. 791-798 ISSN 0078-5466 R&D Projects: GA AV ČR IAA1010105 Grant - others:KBN(PL) 2 P03B 082 19 Institutional research plan: CEZ:AV0Z1010921 Keywords : laser-produced plasma * laser beam focus position influence Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.298, year: 2001

  7. Laser-driven acceleration of protons from hydrogenated annealed silicon targets

    Czech Academy of Sciences Publication Activity Database

    Picciotto, A.; Margarone, Daniele; Krása, Josef; Velyhan, Andriy; Serra, E.; Bellutti, P.; Scarduelli, G.; Calliari, L.; Krouský, Eduard; Rus, Bedřich; Dapor, M.

    2010-01-01

    Roč. 92, č. 3 (2010), 34008/1-34008/5 ISSN 0295-5075 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser-driven acceleration * laser ablation * plasma-material interactions * boundary layer effects Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.753, year: 2010

  8. Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

    Science.gov (United States)

    Maji, Nilay; Nath, T. K.

    2018-04-01

    The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

  9. Laser ion deposition and implantation into different substrates

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, Mariapompea

    2017-01-01

    Roč. 25, č. 1 (2017), s. 23-31 ISSN 1213-2705. [Letní vakuová škola vakuové techniky 2017. Topolčianky, 31.05.2017-01.06.2017] R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : time-of-flight * laser beams * ion spectrometers Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics)

  10. A InGaN/GaN quantum dot green (λ=524 nm) laser

    KAUST Repository

    Zhang, Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-01-01

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching

  11. Fundamentals of ultrafast laser-material interaction

    Czech Academy of Sciences Publication Activity Database

    Shugaev, M.V.; Wu, Ch.; Armbruster, O.; Naghilou, A.; Brouwer, N.; Ivanov, D.S.; Derrien, Thibault; Bulgakova, Nadezhda M.; Kautek, W.; Rethfeld, B.; Zhigilei, L.

    2016-01-01

    Roč. 41, č. 12 (2016), s. 960-968 ISSN 0883-7694 R&D Projects: GA MŠk LO1602; GA ČR GA16-12960S EU Projects: European Commission(XE) 657424 - QuantumLaP Institutional support: RVO:68378271 Keywords : femtosecond laser * Coulomb explosion * microscopic mechanisms * electron-diffraction * molecular- dynamics * metal targets * ablation * surface * dielectrics Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 5.199, year: 2016

  12. Optical simulations of laser focusing for optimization of laser betatron

    Czech Academy of Sciences Publication Activity Database

    Stanke, Ladislav; Thakur, Anita; Šmíd, Michal; Gu, Yanjun; Falk, Kateřina

    2017-01-01

    Roč. 12, May (2017), 1-14, č. článku P05004. ISSN 1748-0221 R&D Projects: GA MŠk EF15_008/0000162; GA MŠk LQ1606 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 Keywords : matter * accelerator modelling and simulations * multi-particle dynamics * single-particle dynamics * Beam Optics Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.220, year: 2016

  13. Synthesis of Zn(BH{sub 4}){sub 2} and Gas Absorption and Release Characteristics of Zn(BH{sub 4}){sub 2}, Ni, or Ti-Added MgH{sub 2}–Based Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kwak, Young Jun; Lee, Seong Ho; Kwon, Sung Nam; Park Il Woo; Song, Myoung Youp [Chonbuk National University, Jeonju (Korea, Republic of)

    2015-07-15

    A sample [named Zn(BH{sub 4}){sub 2}(+NaCl)] was synthesized by milling ZnCl{sub 2} and NaBH{sub 4} at 400 rpm under argon gas for 2 h. And Zn(BH{sub 4}){sub 2}(+NaCl)+MgH{sub 2} sample was prepared by milling MgH{sub 2} in a planetary ball mill and mixing with the Zn(BH{sub 4}){sub 2}(+NaCl) synthesized by milling for 4 h in a mortar with a pestle. Then the gas-release characteristics of the two samples were investrigated. Analyses of XRD patterns and FT-IR spectra, as well as TGA, DTA, and SEM observations, were also performed. After heating the samples to 400 ℃, the weight losses of Zn(BH{sub 4}){sub 2}(+NaCl) and Zn(BH{sub 4}){sub 2}(+NaCl)+MgH{sub 2} were 11.2 and 8.2 wt%, respectively, with respect to the sample weight. The DTA results for the two samples showed a decomposition peak for Zn(BH{sub 4}){sub 2} at about 61 ℃. The DTA result of Zn(BH{sub 4}){sub 2}(+NaCl) + MgH{sub 2} showed a decomposition peak for MgH{sub 2} at about 374 ℃. A sample of Zn(BH{sub 4}){sub 2}(+NaCl)+MgH{sub 2} to which Ni, and Ti were added, with a composition of 90 wt% MgH{sub 2}-5 wt% Zn(BH{sub 4}){sub 2}(+NaCl)-2.5 wt% Ni-2.5 wt% Ti, in which a large amount of MgH2 is contained in order to make a large quantity of hydrogen be absorbed and released reversibly, was also prepared. The experimental results showed that addition of Zn(BH{sub 4}){sub 2}(+NaCl), Ni, or Ti increased the dehydriding rate of MgH{sub 2}, while decreased its initial hydriding rate.

  14. Impurity-induced states in superconducting heterostructures

    Science.gov (United States)

    Liu, Dong E.; Rossi, Enrico; Lutchyn, Roman M.

    2018-04-01

    Heterostructures allow the realization of electronic states that are difficult to obtain in isolated uniform systems. Exemplary is the case of quasi-one-dimensional heterostructures formed by a superconductor and a semiconductor with spin-orbit coupling in which Majorana zero-energy modes can be realized. We study the effect of a single impurity on the energy spectrum of superconducting heterostructures. We find that the coupling between the superconductor and the semiconductor can strongly affect the impurity-induced states and may induce additional subgap bound states that are not present in isolated uniform superconductors. For the case of quasi-one-dimensional superconductor/semiconductor heterostructures we obtain the conditions for which the low-energy impurity-induced bound states appear.

  15. BH5047 type depth sand moisture-meter of high sensitivity

    International Nuclear Information System (INIS)

    Ji Changsong; Xie Liangnian; Zhang Shulan; Zhang Shuheng

    2000-01-01

    A new depth neutron moisture meter BH5047 has been developed. BH5047 neutron moisture meter is characterised by it is high sensitivity and used for sand water content measurement at concrete mixer. Calibration function is obtained by the Method of Least Squares. Linear correlation efficiency is as good as 0.9977

  16. Effect of Mg, Ca, and Zn on stability of LiBH{sub 4} through computational thermodynamics

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sung Hoon; Manga, Venkateswara Rao; Liu, Zi-Kui [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802 (United States)

    2010-07-15

    The effect of divalent metal-dopants, Mg, Ca, and Zn, on the stability of LiBH{sub 4} is studied by using the first-principles calculations and CALPHAD (CALculation of PHAse Diagram) modeling. The ground states of Mg{sub 1/2}BH{sub 4}, Ca{sub 1/2}BH{sub 4}, and Zn{sub 1/2}BH{sub 4} are shown to be I anti 4m2, F2dd, and I anti 4m2, respectively, through first-principles calculations. Positive enthalpy of mixing between Li and the alloying element is predicted, indicating unfavorable solubility of alloying elements in LiBH{sub 4} and thus offering possibility to decrease the stability of LiBH{sub 4}. The ionic sublattice model of (Li{sup +}, M{sup 2+}, Va){sub 1}(BH{sub 4}{sup -}){sub 1} is adopted for the metal substituted LiBH{sub 4} phase. It is observed that the addition of Mg or Zn has limited effect as the decomposition temperature is between those of LiBH{sub 4} and M{sub 1/2}BH{sub 4} for Mg and Zn substitutions. LiBH{sub 4} is destabilized with magnesium borides or LiZn{sub 4} formation but its decomposition temperature is higher than that of M{sub 1/2}BH{sub 4}. On the other hand, the addition of Ca significantly reduces the H{sub 2} releasing temperature due to the formation of highly stable CaB{sub 6}. (author)

  17. Multi-color imaging of magnetic Co/Pt heterostructures

    Directory of Open Access Journals (Sweden)

    Felix Willems

    2017-01-01

    Full Text Available We present an element specific and spatially resolved view of magnetic domains in Co/Pt heterostructures in the extreme ultraviolet spectral range. Resonant small-angle scattering and coherent imaging with Fourier-transform holography reveal nanoscale magnetic domain networks via magnetic dichroism of Co at the M2,3 edges as well as via strong dichroic signals at the O2,3 and N6,7 edges of Pt. We demonstrate for the first time simultaneous, two-color coherent imaging at a free-electron laser facility paving the way for a direct real space access to ultrafast magnetization dynamics in complex multicomponent material systems.

  18. Laser ion sources for various applications

    Czech Academy of Sciences Publication Activity Database

    Wolowski, J.; Parys, P.; Woryna, E.; Krása, Josef; Láska, Leoš; Rohlena, Karel; Gammino, S.; Ciavola, G.; Torresi, L.; Boody, F. P.; Hora, H.; Haseroth, H.

    2000-01-01

    Roč. 30, č. 1 (2000), s. 69-82 ISSN 0078-5466 Institutional research plan: CEZ:AV0Z1010921 Keywords : ion emission * high-Z plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.231, year: 2000

  19. Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

    Science.gov (United States)

    Mukherjee, Devajyoti

    Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

  20. Study of laser plasma emission from doped targets

    Czech Academy of Sciences Publication Activity Database

    Velardi, L.; Krása, Josef; Velyhan, Andriy; Nassisi, V.

    2012-01-01

    Roč. 83, č. 2 (2012), , "02B911-1"-"02B911-3" ISSN 0034-6748 R&D Projects: GA MŠk(CZ) 7E09092; GA MŠk(CZ) LC528 EU Projects: European Commission(XE) 228334 - LASERLAB-EUROPE Institutional research plan: CEZ:AV0Z10100523 Keywords : copper * excimer lasers * ion mobility * krypton compounds * laser ablation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.602, year: 2012

  1. II-VI/III-V Heterojunction Lasers

    National Research Council Canada - National Science Library

    Gunshor, Robert

    1999-01-01

    ... in both. In the second part of the program we studied the growth and the optical evaluation of wide bandgap nitride heterostructures, an effort which included the first reporting of a GaN-based laser to be fabricated...

  2. Laser-generated plasmas by graphene nanoplatelets embedded into polyethylene

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Ceccio, G.; Restuccia, N.; Messina, E.; Gucciardi, P. G.; Cutroneo, Mariapompea

    2017-01-01

    Roč. 35, č. 2 (2017), s. 294-303 ISSN 0263-0346 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : advanced targets * Au NP * graphene * laser-generated plasma * time-of-flight measurements Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.420, year: 2016

  3. Co@MWNTs-Plastic: A novel electrode for NaBH4 oxidation

    International Nuclear Information System (INIS)

    Zhang, Dongming; Ye, Ke; Cao, Dianxue; Wang, Bin; Cheng, Kui; Li, Yiju; Wang, Guiling; Xu, Yang

    2015-01-01

    Highlights: • MP substrate was fabricated by adhering MWNTs on a piece of obsoleted plastic bag. • Co nano-thorns were prepared by a simple electrodeposition method on the MP surface. • MP owns a superior stability in strong alkaline environment. • CMP exhibits a high catalytic activity for NaBH 4 electrooxidation. • The possible mechanisms of NaBH 4 electrooxidation on CMP was discussed. - Abstract: A novel multi-walled carbon nanotubes (MWNTs)-Plastic (MP) substrate was first fabricated by adhering MWNTs on a piece of obsoleted plastic bag, and Co nano-thorns were subsequently prepared by a simple electrodeposition method on the MP surface. The morphology and phase structure of the as-prepared Co@MWNTs-Plastic (CMP) catalytic electrode are characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffractometer. The catalytic activity of the CMP electrode for NaBH 4 electrooxidation is investigated by means of cyclic voltammetry and chronoamperometry. The employing of waste plastic bags reduces white pollution and the MP substrate exhibits superior stability in alkaline solution. The 3D CMP catalytic electrode owns a high electrochemical activity for NaBH 4 oxidation. Moreover, we discussed the possible mechanisms of NaBH 4 electrooxidation on the CMP

  4. Investigation of plasma ablation and crater formation processes in the Prague Asterix Laser System laser facility

    Czech Academy of Sciences Publication Activity Database

    Borodziuk, S.; Kasperczuk, A.; Pisarczyk, T.; Gus'kov, S.; Ullschmied, Jiří; Králiková, Božena; Rohlena, Karel; Skála, Jiří; Pisarczyk, P.; Kálal, M.

    2004-01-01

    Roč. 34, č. 1 (2004), s. 31-42 ISSN 0078-5466 R&D Projects: GA MŠk LN00A100 Grant - others:HPRI-CT(XX) 1999-00053 Institutional research plan: CEZ:AV0Z2043910; CEZ:AV0Z1010921 Source of funding: R - rámcový projekt EK Keywords : laser-produced plasma * interferometric measurements * crater Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.308, year: 2004

  5. Ablation of organic polymers by 46.9-nm-laser radiation

    Czech Academy of Sciences Publication Activity Database

    Juha, Libor; Bittner, Michal; Chvostová, Dagmar; Krása, Josef; Präg R., Ansgar; Ullschmied, Jiří; Pientka, Zbyněk; Krzywinski, J.; Wawro, A.; Grisham, M. E.; Menoni, C.S.; Rocca, J.J.; Otčenášek, Zdeněk; Pelka, B.; Vaschenko, G. O.

    2005-01-01

    Roč. 86, č. 3 (2005), 034109/1-034109/3 ISSN 0003-6951 R&D Projects: GA MŠk(CZ) 1P04LA235; GA MŠk(CZ) LN00A100 Institutional research plan: CEZ:AV0Z10100523 Keywords : ablation * XUV laser * capillary discharge laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 4.127, year: 2005

  6. Kilowatt average power 100 J-level diode pumped solid state laser

    Czech Academy of Sciences Publication Activity Database

    Mason, P.; Divoký, Martin; Ertel, K.; Pilař, Jan; Butcher, T.; Hanuš, Martin; Banerjee, S.; Phillips, J.; Smith, J.; De Vido, M.; Lucianetti, Antonio; Hernandez-Gomez, C.; Edwards, C.; Mocek, Tomáš; Collier, J.

    2017-01-01

    Roč. 4, č. 4 (2017), s. 438-439 ISSN 2334-2536 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086 Institutional support: RVO:68378271 Keywords : diode-pumped * solid state * laser Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 7.727, year: 2016

  7. Characterization of collisionally pumped optical-field-ionization soft X-ray lasers

    Czech Academy of Sciences Publication Activity Database

    Mocek, Tomáš; Sebban, S.; Bettaibi, I.; Upcraft, L. M.; Balcou, P.; Breger, P.; Zeitoun, P.; Le Pape, S.; Ros, D.; Klisnick, A.; Carillon, A.; Jamelot, G.; Rus, Bedřich; Wyart, J. F.

    2004-01-01

    Roč. 78, - (2004), s. 939-944 ISSN 0946-2171 Grant - others:HPRI(XE) 199900086 Institutional research plan: CEZ:AV0Z1010921 Keywords : X-ray lasers * optical-field-ionization * collisional excitation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.215, year: 2004

  8. Plasmonics effect of Ag nanoislands covered n-Al:ZnO/p-Si heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Venugopal, N., E-mail: venu369@gmail.com; Kaur, Gurpreet, E-mail: gkaurdnt@iitr.ernet.in; Mitra, Anirban, E-mail: mitrafph@iitr.ernet.in

    2014-11-30

    Highlights: • Effect of Ag plasmonic nanoislands on n-aluminum doped zinc oxide (Al:ZnO)/p-silicon (p-Si) heterostructure device. • Morphology of Ag nanoisland in consequence with the optical (absorbance and photoluminescence) and electrical properties of the device. • Ag nanoisland/Al:ZnO heterostructure shows remarkable improvement of absorbance in both visible and UV region compare to the bare silicon. • Near band edge emission in photoluminescence has been enhanced with the deposition of Ag nanoisland. • Dark and illumination current density also increases with the deposition of Ag nanoisland. - Abstract: A plasmonic heterostructure of Ag (nanoisland)/n-Al:ZnO/p-Si is fabricated using pulsed laser deposition and thermal evaporation method. In this structure Al:ZnO plays an important role of transparent conductive oxide (spacer layer) as well as the rectifying junction with silicon. By introducing the silver nanoislands on Al:ZnO, light harvesting has been enhanced because of plasmonic and light scattering effect. Morphology of Ag nanoparticles in consequence with the optical and electrical properties of the device has been studied. Optical reflection measurement of the device with Ag nanoisland shows remarkable improvement in both visible and UV regions compared to the bare n-Al:ZnO/p-Si heterostructure. Near band edge emission in photoluminescence has been enhanced with the deposition of Ag nanoislands. Dark and illumination current density has also been increased with the deposition of Ag nanoisland. Our experimental results suggest that integration of Ag nanoislands may help to improve the efficiency of hybrid silicon based photonic devices.

  9. Generation of Ta ions at high laser-power densities

    Czech Academy of Sciences Publication Activity Database

    Láska, Leoš; Jungwirth, Karel; Králiková, Božena; Krása, Josef; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Ullschmied, Jiří; Badziak, J.; Parys, P.; Wolowski, J.; Woryna, E.

    2002-01-01

    Roč. 52, Suppl. D (2002), s. D283-D291 ISSN 0011-4626. [Plasma Physics and Technology. Prague, 10.06.2002-13.06.2002] Institutional research plan: CEZ:AV0Z1010921 Keywords : laser produced plasma * multiple charged Ta ions Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.311, year: 2002

  10. Advanced targets preparation for TNSA laser irradiation and their characterization

    Czech Academy of Sciences Publication Activity Database

    Ceccio, G.; Torrisi, L.; Cutroneo, Mariapompea

    2016-01-01

    Roč. 11, APR (2016), C04017 ISSN 1748-0221. [Conference on Plasma Physics by Laser and Applications (PPLA). Frascati, 05.10.2015-07.10.2015] Institutional support: RVO:61389005 Keywords : TOF * ion sources * plasma diagnostics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.220, year: 2016

  11. New fundamental experimental studies on {alpha}-Mg(BH{sub 4}){sub 2} and other borohydrides

    Energy Technology Data Exchange (ETDEWEB)

    Hagemann, Hans, E-mail: Hans-Rudolf.Hagemann@unige.ch [Dept. de Chim. Phys, Univ. of Geneva (Switzerland); D' Anna, Vincenza [Dept. de Chim. Phys, Univ. of Geneva (Switzerland); Rapin, Jean-Philippe; Cerny, Radovan [Lab. Crystallography, Univ. of Geneva (Switzerland); Filinchuk, Yaroslav [Swiss-Norwegian Beam Lines at ESRF, Grenoble (France); Kim, Ki Chul; Sholl, David S. [School of Chemical and Biomolecular Engineering, Georgia Inst. Technol., Atlanta (United States); Parker, Stewart F. [ISIS Facility, STFC Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom)

    2011-09-15

    Research highlights: > Eutectic behavior is observed in the LiBH4 -Mg(BH4)2 system. > New INS data show good agreement with theoretical DFT calculations. > Temperature dependent Raman spectra complement previous NMR studies. - Abstract: Several new studies of Mg(BH{sub 4}){sub 2} are reported. A 1:1 LiBH{sub 4}:Mg(BH{sub 4}){sub 2} mixture was studied by in situ synchrotron X-ray diffraction and reveals an eutectic behavior with the eutectic composition more rich in Mg(BH{sub 4}){sub 2}, and the eutectic temperature lower than 456 K. No dual cation compound was observed in this experiment. New vibrational spectra including INS data have been obtained and are compared with theoretical DFT calculations and recent NMR studies, showing good agreement.

  12. Effect of MoS2 on hydrogenation storage properties of LiBH4

    International Nuclear Information System (INIS)

    Liang, Dan; Han, Shumin; Wang, Jiasheng; Zhang, Wei; Zhao, Xin; Zhao, Ziyang

    2014-01-01

    The hydrogen storage properties of LiBH 4 ball milled with 20 wt% MoS 2 have been investigated. It shows that the LiBH 4 doped with MoS 2 exhibits favorable hydrogenation and dehydrogenation properties in terms of decomposition temperature and hydriding/dehydriding reversibility. The sample with MoS 2 starts to release hydrogen at 230 °C and has a decrease of 80 °C in contrast with pristine LiBH 4 . Furthermore, for the second cycle, the LiBH 4 with MoS 2 maintains a reversible hydrogen storage capacity of about 8.0 wt% which is almost identical with the first cycle under 5 MPa at 550 °C. Analyzed by the XRD and the FTIR results, LiBH 4 can be regenerated after re-hydrogenation under a relatively mild condition by adding MoS 2 . The improvement of the hydrogenation and dehydrogenation properties mainly results from the formation of Li 2 S and MoB 2 during ball milling. -- Graphical abstract: Hydrogen absorption curves of LiBH 4 doped with MoS 2 for five cycles at 400 °C. Highlights: • The hydrogen absorption capacity is nearly the same for 5 cycles at 400 °C. • The sample with MoS 2 starts to release hydrogen at 230 °C. • The coexistence of MoB 2 and Li 2 S catalyzes the decomposition of LiBH 4

  13. Long wave polar modes in semiconductor heterostructures

    CERN Document Server

    Trallero-Giner, C; García-Moliner, F; Garc A-Moliner, F; Perez-Alvarez, R; Garcia-Moliner, F

    1998-01-01

    Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quantum wires and dots. Also to allow anyone reading the book to apply the techniques discussed for planar heterostructures, the scope has been widened to include cylindrical and spherical geometries. The book is intended as an introductory text which guides the reader through basic questions and expands to cover state-of-the-art professional topics. The book is relevant to experimentalists wanting an instructive presentatio...

  14. Optical dynamics in low-dimensional semiconductor heterostructures. Quantum dots and quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Carsten

    2008-07-01

    This work is focused on the optical dynamics of mesoscopic semiconductor heterostructures, using as prototypes zero-dimensional quantum dots and quantum cascade lasers which consist of quasitwo- dimensional quantum wells. Within a density matrix theory, a microscopic many-particle theory is applied to study scattering effects in these structures: the coupling to external as well as local fields, electron-phonon coupling, coupling to impurities, and Coulomb coupling. For both systems, the investigated effects are compared to experimentally observed results obtained during the past years. In quantum dots, the three-dimensional spatial confinement leads to the necessity to consider a quantum kinetic description of the dynamics, resulting in non-Markovian electron-phonon effects. This can be seen in the spectral phonon sidebands due to interaction with acoustic phonons as well as a damping of nonlinear Rabi oscillations which shows a nonmonotonous intensity and pulse duration dependence. An analysis of the inclusion of the self-interaction of the quantum dot shows that no dynamical local field terms appear for the simple two-level model. Considering local fields which have their origin in many quantum dots, consequences for a two-level quantum dot such as a zero-phonon line broadening and an increasing signal in photon echo experiments are found. For the use of quantum dots in an optical spin control scheme, it is found that the dephasing due to the electron-phonon interaction can be dominant in certain regimes. Furthermore, soliton and breather solutions are studied analytically in nonlinear quantum dot ensembles. Generalizing to quasi-two-dimensional structures, the intersubband dynamics of quantum cascade laser structures is investigated. A dynamical theory is considered in which the temporal evolution of the subband populations and the current density as well as the influence of scattering effects is studied. In the nonlinear regime, the scattering dependence and

  15. Efficient laser performance of a cryogenic Yb:YAG laser pumped by fiber coupled 940 and 969 nm laser diodes

    Czech Academy of Sciences Publication Activity Database

    Jambunathan, Venkatesan; Miura, Taisuke; Těsnohlídková, L.; Lucianetti, Antonio; Mocek, Tomáš

    2015-01-01

    Roč. 12, č. 1 (2015), "015002-1"-"015002-6" ISSN 1612-2011 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA ČR GA14-01660S Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : cryogenic laser s * absorption * bandwidth * emission cross-section * absorption cross-section * diode pumping Subject RIV: BH - Optics, Masers, Laser s Impact factor: 2.391, year: 2015

  16. Different influence of long and short mid-infrared laser pulsed on eye rissue

    Czech Academy of Sciences Publication Activity Database

    Jelínková, H.; Pašta, J.; Němec, M.; Šulc, J.; Miyagi, M.; Shi, Y.W.; Matsuura, Y.; Jelínek, Miroslav

    2003-01-01

    Roč. 13, č. 5 (2003), s. 735-742 ISSN 1054-660X Institutional research plan: CEZ:AV0Z1010921 Keywords : Er:YAG laser * application in ophtalmology Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.765, year: 2003

  17. Laser-deposited thin films for butane detection

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Kocourek, Tomáš; Flory, F.; Escoubas, L.; Mazingue, T.; Myslík, V.; Vrňata, M.; Fryček, R.; Vysloužil, F.

    2006-01-01

    Roč. 16, č. 2 (2006), s. 217-222 ISSN 1054-660X R&D Projects: GA AV ČR(CZ) IAA1010110; GA ČR(CZ) GA104/03/0406 Grant - others:NANOPHOS(XE) IST-2001-39112 Institutional research plan: CEZ:AV0Z10100522 Keywords : laser deposition * gas sensor * mode spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.516, year: 2006

  18. FEM for modelling 193 nm excimer laser treatment of SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub x} heterostructures on SOI substrates

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas, Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain)

    2011-03-15

    Research on epitaxial crystalline silicon (c-Si) and silicon-germanium (Si{sub 1-x}Ge{sub x}) alloys growth and annealing for microelectronic purposes, such as Micro- or Nano-Electro-Mechanical Systems (MEMS or NEMS) and Silicon-On-Nothing (SON) devices is continuously in progress. Laser assisted annealing techniques using commercial ArF Excimer Laser sources are based on ultra-rapid heating and cooling cycles induced by the 193 nm pulses of 20 ns, which are absorbed in the near surface region of the heterostructures. During and after the absorption of these laser pulses, complex physical processes appear that strongly depend on sample structure and applied laser pulse energy densities. The control of the experimental parameters is therefore a key task for obtaining high quality alloys. The Finite ElementsMethod (FEM) is a powerful tool for the optimization of such treatments, because it provides the spatial and temporal temperature fields that are produced by the laser pulses. In this work, we have used a FEM commercial software, to predict the temperatures gradients induced by ArF excimer laser over a wide energy densities range, 0.1<{phi}<0.4 J/cm{sup 2}, on different SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub (x)} thin films deposited on SOI substrate. These numerical results allow us to predict the threshold energies needed to reach the melting point (MP) of the Si and SiGe alloy without oxidation of the thin films system. Therefore, it is possible to optimize the conditions to achieve high quality epitaxy films. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

    International Nuclear Information System (INIS)

    Socol, M.; Preda, N.; Rasoga, O.; Breazu, C.; Stavarache, I.; Stanculescu, F.; Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G.; Girtan, M.; Stefan, N.

    2016-01-01

    Highlights: • Organic heterostructures prepared by MAPLE having a large absorbtion domain. • Photogeneration process is evidenced in the structure with ZnPc:TPyP mixed layer. • An increase in current value is observed in the structure with MgPc:TPyP mixed layer. - Abstract: Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV–vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current–voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

  20. Flexible heterostructures based on metal phthalocyanines thin films obtained by MAPLE

    Energy Technology Data Exchange (ETDEWEB)

    Socol, M., E-mail: cela@infim.ro [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Preda, N.; Rasoga, O. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Breazu, C. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125 Bucharest-Magurele (Romania); Stavarache, I. [National Institute of Material Physics, 105 bis Atomistilor Street, PO Box MG-7, 077125 Bucharest-Magurele (Romania); Stanculescu, F. [University of Bucharest, Faculty of Physics, 405 Atomistilor Street, PO Box MG-11, 077125 Bucharest-Magurele (Romania); Socol, G.; Gherendi, F.; Grumezescu, V.; Popescu-Pelin, G. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Bucharest-Magurele (Romania); Girtan, M. [Laboratoire de Photonique d’Angers, Université d’Angers, 2, Bd. Lavoisier, 49045 Angers (France); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, 077125 Bucharest-Magurele (Romania)

    2016-06-30

    Highlights: • Organic heterostructures prepared by MAPLE having a large absorbtion domain. • Photogeneration process is evidenced in the structure with ZnPc:TPyP mixed layer. • An increase in current value is observed in the structure with MgPc:TPyP mixed layer. - Abstract: Heterostructures based on zinc phthalocyanine (ZnPc), magnesium phthalocyanine (MgPc) and 5,10,15,20-tetra(4-pyrydil)21H,23H-porphine (TPyP) were deposited on ITO flexible substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique. Organic heterostructures containing (TPyP/ZnPc(MgPc)) stacked or (ZnPc(MgPc):TPyP) mixed layers were characterized by X-ray diffraction-XRD, photoluminescence-PL, UV–vis and FTIR spectroscopy. No chemical decomposition of the initial materials was observed. The investigated structures present a large spectral absorption in the visible range making them suitable for organic photovoltaics applications (OPV). Scanning electron microscopy-SEM and atomic force microscopy-AFM revealed morphologies typical for the films prepared by MAPLE. The current–voltage characteristics of the investigated structures, measured in dark and under light, present an improvement in the current value (∼3 order of magnitude larger) for the structure based on the mixed layer (Al/MgPc:TPyP/ITO) in comparison with the stacked layer (Al/MgPc//TPyP/ITO). A photogeneration process was evidenced in the case of structures Al/ZnPc:TPyP/ITO with mixed layers.

  1. Homogenious focusing with a transient soft X-ray laser for irradiation experiments

    Czech Academy of Sciences Publication Activity Database

    Kazamias, S.; Cassou, K.; Guilbaud, O.; Klisnick, A.; Ros, D.; Plé, F.; Jamelot, G.; Rus, Bedřich; Kozlová, Michaela; Stupka, Michal; Mocek, Tomáš; Douillet, D.; Zeitoun, P.; Joyeux, D.; Phalippou, D.

    2006-01-01

    Roč. 263, - (2006), s. 98-104 ISSN 0030-4018 R&D Projects: GA MŠk(CZ) LC528; GA ČR GA202/05/2316 Institutional research plan: CEZ:AV0Z10100523 Keywords : soft X-Ray laser * focusing * laser plasma * UV radiation * beam profile Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.480, year: 2006

  2. Interferometric investigation of an early stage of plasma expansion with the high-power laser system PALS

    Czech Academy of Sciences Publication Activity Database

    Kasperczuk, A.; Pisarczyk, P.; Pisarczyk, T.; Králiková, Božena; Mašek, Karel; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Ullschmied, Jiří; Kálal, M.

    2002-01-01

    Roč. 52, č. 3 (2002), s. 395-404 ISSN 0011-4626 R&D Projects: GA MŠk LN00A100 Institutional research plan: CEZ:AV0Z2043910 Keywords : laser plasma, PALS laser system, laser interferometry Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.311, year: 2002

  3. Novel concept of electric discharge oxygen-iodine laser

    Czech Academy of Sciences Publication Activity Database

    Schmiedberger, Josef; Jirásek, Vít; Kodymová, Jarmila; Rohlena, Karel

    2009-01-01

    Roč. 54, č. 2 (2009), 239-248 ISSN 1434-6060 R&D Projects: GA ČR GA202/07/0323 Grant - others:US Air Force EOARD(US) FA8655-06-1-3034 Institutional research plan: CEZ:AV0Z10100523 Keywords : chemical lasers * plasma torches * high-frequency and RF discharges Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.420, year: 2009

  4. B-H Bond Activation by an Amidinate-Stabilized Amidosilylene: Non-Innocent Amidinate Ligand.

    Science.gov (United States)

    Khoo, Sabrina; Shan, Yu-Liang; Yang, Ming-Chung; Li, Yongxin; Su, Ming-Der; So, Cheuk-Wai

    2018-05-21

    The activation of B-H and B-Cl bonds in boranes by base-stabilized low-valent silicon compounds is described. The reaction of the amidinato amidosilylene-borane adduct [L{Ar(Me 3 Si)N}SiBH 3 ] [1; L = PhC(N tBu) 2 , and Ar = 2,6- iPr 2 C 6 H 3 ] with MeOTf in toluene at room temperature formed [L{Ar(Me 3 Si)N}SiBH 2 OTf] (2). [LSiN(SiMe 3 )Ar] in compound 2 then underwent a B-H bond activation with BH 2 OTf in refluxing toluene to afford the B-H bond activation product [LB(H)Si(H)(OTf){N(SiMe 3 )Ar}] (3). On the other hand, when compound 2 was reacted with 4-dimethylaminopyridine in refluxing toluene, another B-H bond activation product [(μ-κ1:κ1-L)B(H)(DMAP)Si(H){N(Ar)SiMe 3 }]OTf (4) was afforded. Mechanistic studies show that "(μ-κ1:κ1-L)B(H)(OTf)Si(H){N(Ar)SiMe 3 }" (2A) is the key intermediate in the reactions mentioned above. The formation of 2A is further evidenced by the activation of the B-Cl bond in PhBCl 2 by the amidinato silicon(I) dimer [LSi:] 2 to form the B-Cl bond activation product [(μ-κ1:κ1-L)B(Cl)(Ph)Si(Cl)] 2 (6). Compounds 2-4 and 6 were characterized by nuclear magnetic resonance spectroscopy and X-ray crystallography.

  5. Core--strategy leading to high reversible hydrogen storage capacity for NaBH4.

    Science.gov (United States)

    Christian, Meganne L; Aguey-Zinsou, Kondo-François

    2012-09-25

    Owing to its high storage capacity (10.8 mass %), sodium borohydride (NaBH(4)) is a promising hydrogen storage material. However, the temperature for hydrogen release is high (>500 °C), and reversibility of the release is unachievable under reasonable conditions. Herein, we demonstrate the potential of a novel strategy leading to high and stable hydrogen absorption/desorption cycling for NaBH(4) under mild pressure conditions (4 MPa). By an antisolvent precipitation method, the size of NaBH(4) particles was restricted to a few nanometers (hydrogen at 400 °C. Further encapsulation of these nanoparticles upon reaction of nickel chloride at their surface allowed the synthesis of a core--shell nanostructure, NaBH(4)@Ni, and this provided a route for (a) the effective nanoconfinement of the melted NaBH(4) core and its dehydrogenation products, and (b) reversibility and fast kinetics owing to short diffusion lengths, the unstable nature of nickel borohydride, and possible modification of reaction paths. Hence at 350 °C, a reversible and steady hydrogen capacity of 5 mass % was achieved for NaBH(4)@Ni; 80% of the hydrogen could be desorbed or absorbed in less than 60 min, and full capacity was reached within 5 h. To the best of our knowledge, this is the first time that such performances have been achieved with NaBH(4). This demonstrates the potential of the strategy in leading to major advancements in the design of effective hydrogen storage materials from pristine borohydrides.

  6. Vertical-Cavity In-plane Heterostructures: Physics and Applications

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-01-01

    We show that the in-plane heterostructures realized in vertical cavities with high contrast grating(HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic well, the property of a confined mode is determined...... by the well width and barrier height. We show that in vertical-cavity in-plane heterostructures, anisotropic dispersion curvatures plays a key role as well, leading to exotic effects such as a photonic well with conduction band like well and a valence band like barrier. We investigate three examples...

  7. Numerical analysis of Yb.sup.3+./sup. -sensitized Er.sup.3+./sup. -doped fibre-ring laser

    Czech Academy of Sciences Publication Activity Database

    Karásek, Miroslav; Kaňka, Jiří

    1998-01-01

    Roč. 145, č. 2 (1998), s. 133-137 ISSN 1350-2433 R&D Projects: GA AV ČR IAA267403 Keywords : optical fibre s * fibre lasers * numerical analysis * modelling * ring lasers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.628, year: 1998

  8. Biofouling inhibition in MBR by Rhodococcus sp. BH4 isolated from real MBR plant.

    Science.gov (United States)

    Oh, Hyun-Suk; Kim, Sang-Ryoung; Cheong, Won-Suk; Lee, Chung-Hak; Lee, Jung-Kee

    2013-12-01

    It has been reported that an indigenous quorum quenching bacterium, Rhodococcus sp. BH4, which was isolated from a real plant of membrane bioreactor (MBR) has promising potential to control biofouling in MBR. However, little is known about quorum quenching mechanisms by the strain BH4. In this study, various characteristics of strain BH4 were investigated to elucidate its behavior in more detail in the mixed liquor of MBR. The N-acyl homoserine lactone hydrolase (AHL-lactonase) gene of strain BH4 showed a high degree of identity to qsdA in Rhodococcus erythropolis W2. The LC-ESI-MS analysis of the degradation product by strain BH4 confirmed that it inactivated AHL activity by hydrolyzing the lactone bond of AHL. It degraded a wide range of N-acyl homoserine lactones (AHLs), but there was a large difference in the degradation rate of each AHL compared to other reported AHL-lactonase-producing strains belonging to Rhodococcus genus. Its quorum quenching activity was confirmed not only in the Luria-Bertani medium, but also in the synthetic wastewater. Furthermore, the amount of strain BH4 encapsulated in the vessel as well as the material of the vessel substantially affected the quorum quenching activity of strain BH4, which provides useful information, particularly for the biofouling control in a real MBR plant from an engineering point of view.

  9. Synthesis, Structure, and Li-Ion Conductivity of LiLa(BH4)3X, X = Cl, Br, I

    DEFF Research Database (Denmark)

    Payandeh GharibDoust, SeyedHosein; Brighi, Matteo; Sadikin, Yolanda

    2017-01-01

    In this work, a new type of addition reaction between La(BH4)3 and LiX, X = Cl, Br, I, is used to synthesize LiLa(BH4)3Cl and two new compounds LiLa(BH4)3X, X = Br, I. This method increases the amounts of LiLa(BH4)3X and the sample purity. The highest Li-ion conductivity is observed for LiLa(BH4)...

  10. Near infrared magnetic circular dichroism of uranium borohydride, U(BH4)4

    International Nuclear Information System (INIS)

    Keiderling, T.A.; Schulz, W.C.

    1980-01-01

    The magnetic circular dichroism of U(BH 4 ) 4 in Hf(BH 4 ) 4 at low temperatures has been measured in the near. The A terms resulting can be interpreted to confirm the E symmetry ground state and three excited state assignments. (orig.)

  11. High-power laser-plasma chemistry in planetary atmospheres

    Czech Academy of Sciences Publication Activity Database

    Juha, Libor; Ferus, Martin; Kubelík, Petr; Krása, Josef; Skála, Jiří; Pfeifer, Miroslav; Civiš, Svatopluk; Cihelka, Jaroslav; Babánková, Dagmar

    2007-01-01

    Roč. 7, č. 3 (2007), s. 516-517 ISSN 1531-1074. [Bioastronomy 2007. San Juach, 16.07.2007-20.07.2007] R&D Projects: GA ČR GA203/06/1278; GA MŠk(CZ) LC528; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z40400503 Keywords : laser spark * laser-produced plasma * chemical evolution * plasmachemistry Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.025, year: 2007

  12. Generation of 500-mJ nanosecond pulses from a diode-pumped Yb:YAG TRAM laser amplifier

    Czech Academy of Sciences Publication Activity Database

    Tokita, S.; Divoký, Martin; Furuse, H.; Matsumoto, K.; Nakamura, Y.; Yoshida, M.; Kawashima, T.; Kawanaka, J.

    2014-01-01

    Roč. 4, č. 10 (2014), s. 2122-2126 ISSN 2159-3930 Institutional support: RVO:68378271 Keywords : active-mirror laser * ceramics Subject RIV: BH - Optics, Masers, Laser s Impact factor: 2.844, year: 2014

  13. Heterostructures and quantum devices

    CERN Document Server

    Einspruch, Norman G

    1994-01-01

    Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

  14. Radiation transfer effects on the spectra of laser-generated plasmas

    Czech Academy of Sciences Publication Activity Database

    Renner, Oldřich; Kerr, F.M.; Wolfrum, E.; Hawreliak, J.; Chambers, D.; Rose, S. J.; Wark, J. S.; Scott, H.A.; Patel, P.

    2006-01-01

    Roč. 96, č. 18 (2006), 185002/1-185002/4 ISSN 0031-9007 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser-produced plasma * spectral line shapes * plasma modeling * radiative transfer effects Subject RIV: BH - Optics, Masers, Lasers Impact factor: 7.072, year: 2006

  15. Laser-Irradiated Gas Puff Target Plasma Modeling

    Czech Academy of Sciences Publication Activity Database

    Vrba, Pavel; Vrbová, M.

    2014-01-01

    Roč. 42, č. 10 (2014), s. 2600-2601 ISSN 0093-3813 R&D Projects: GA ČR GAP102/12/2043 Grant - others:GA MŠk(CZ) CZ.1.07/2.3.00/20.0092 Institutional support: RVO:61389021 Keywords : Gas puff laser plasma * water window radiation source * RHMD code Z* Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.101, year: 2014 http://ieeexplore.ieee.org

  16. Nanostructured graphite-induced destabilization of LiBH4 for reversible hydrogen storage

    CSIR Research Space (South Africa)

    Wang, K

    2016-11-01

    Full Text Available been conducted to gain insight into the promoting effect of nano-G on the reversible dehydrogenation of the LiBH(sub4). Our study found that nano-G exerts its promoting effect via interaction with LiBH(sub4) and as grinding aid....

  17. Conformations of 1,3,3,5,7,7-Hexamethyl-1,5-diazacyclooctane and Its Bis-BH(3) Adduct. Mono- and Bis-BH(3) Adducts of Di-Tertiary Amines.

    Science.gov (United States)

    Livant, P.; Majors, A. W.; Webb, T. R.

    1996-05-03

    A variable-temperature (1)H- and (13)C-NMR study revealed a conformational equilibrium for 1,3,3,5,7,7-hexamethyl-1,5-diazacyclooctane (4) having DeltaG() = 8.8 +/- 0.6 kcal/mol at 184 K. This activation barrier connects a major and a minor form of 4. Molecular mechanics calculations on 4 led to the conclusion that the major form is a set of twist-chair-chairs interconverting rapidly via the chair-chair and that the minor form is most likely a set of twist-boat-boats interconverting rapidly via the boat-boat. The proximity of the two nitrogen lone pairs in the major form of 4 made plausible the expectation that 4, as well as a related diamine with apposed nitrogens, 3,7-dimethyl-3,7-diazabicyclo[3.3.1]nonane (3), might bind a Lewis acid, namely BH(3), using both lone pairs simultaneously and equally. This proved not to be the case: for 3 only the bis-BH(3) adduct was found and for 4 the mono-BH(3) adduct utilized only one nitrogen lone pair. The structure of the bis-BH(3) adduct of 4 (12) was determined by X-ray crystallography to be a twist-boat-boat with BH(3)s cis. Molecular mechanics calculations on 12 were consistent with the solid state conformation found.

  18. Conductors, semiconductors and insulators irradiated with short-wavelength free-electron laser

    Czech Academy of Sciences Publication Activity Database

    Krzywinski, J.; Sobierajski, R.; Jurek, M.; Nietubyc, R.; Pelka, J. B.; Juha, Libor; Bittner, Michal; Létal, V.; Vorlíček, Vladimír; Andrejczuk, A.; Feldhaus, J.; Keitel, B.; Saldin, E.; Schneidmiller, E.A.; Treusch, R.; Yurkov, M. V.

    2007-01-01

    Roč. 101, č. 4 (2007), 043107/1-043107/4 ISSN 0021-8979 R&D Projects: GA MŠk 1P04LA235; GA MŠk LC510; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : free-electron laser * extreme ultraviolet * ablation * laser-matter interaction Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.171, year: 2007

  19. Emission characteristics and stability of laser ion sources

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Velyhan, Andriy; Krouský, Eduard; Láska, Leoš; Rohlena, Karel; Jungwirth, Karel; Ullschmied, Jiří; Lorusso, A.; Velardi, L.; Nassisi, V.; Czarnecka, A.; Ryc, L.; Parys, P.; Wolowski, J.

    2010-01-01

    Roč. 85, č. 5 (2010), s. 617-621 ISSN 0042-207X R&D Projects: GA AV ČR IAA100100715 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser ion sources * ion emission reproducibility * thermal and fast ions * ion temperature * centre-of-mass velocity Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.048, year: 2010

  20. Femtosecond-pulse-driven soft X-ray laser studies using a gas puff target irradiated with a Ti:Sapphire laser

    Czech Academy of Sciences Publication Activity Database

    Fiedorowicz, H.; Bartnik, A.; Szczurek, M.; Nam, C. H.; Mocek, Tomáš; Shin, H. J.; Cha, Y. H.; Lee, D. G.; Hong, K. H.

    2000-01-01

    Roč. 30, č. 1 (2000), s. 93-102 ISSN 0078-5466 Grant - others:PL(XC) 2P03B 093 16 Institutional research plan: CEZ:AV0Z1010921 Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.231, year: 2000

  1. Numerical simulation of a passive twin-core fibre nonlinear coupler ring laser

    Czech Academy of Sciences Publication Activity Database

    Zhu, Y.; Hauderek, V. A.; Kaňka, Jiří; Rogers, A. J.

    1999-01-01

    Roč. 146, č. 4 (1999), s. 204-208 ISSN 1350-2433 Grant - others:EU COPERNICUS(XE) CIPA3510CT937882 Institutional research plan: CEZ:AV0Z2067918 Keywords : optical fibres * fibre lasers * optical solitons Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.826, year: 1999

  2. The BH3 α-Helical Mimic BH3-M6 Disrupts Bcl-XL, Bcl-2, and MCL-1 Protein-Protein Interactions with Bax, Bak, Bad, or Bim and Induces Apoptosis in a Bax- and Bim-dependent Manner*

    Science.gov (United States)

    Kazi, Aslamuzzaman; Sun, Jiazhi; Doi, Kenichiro; Sung, Shen-Shu; Takahashi, Yoshinori; Yin, Hang; Rodriguez, Johanna M.; Becerril, Jorge; Berndt, Norbert; Hamilton, Andrew D.; Wang, Hong-Gang; Sebti, Saïd M.

    2011-01-01

    A critical hallmark of cancer cell survival is evasion of apoptosis. This is commonly due to overexpression of anti-apoptotic proteins such as Bcl-2, Bcl-XL, and Mcl-1, which bind to the BH3 α-helical domain of pro-apoptotic proteins such as Bax, Bak, Bad, and Bim, and inhibit their function. We designed a BH3 α-helical mimetic BH3-M6 that binds to Bcl-XL and Mcl-1 and prevents their binding to fluorescently labeled Bak- or Bim-BH3 peptides in vitro. Using several approaches, we demonstrate that BH3-M6 is a pan-Bcl-2 antagonist that inhibits the binding of Bcl-XL, Bcl-2, and Mcl-1 to multi-domain Bax or Bak, or BH3-only Bim or Bad in cell-free systems and in intact human cancer cells, freeing up pro-apoptotic proteins to induce apoptosis. BH3-M6 disruption of these protein-protein interactions is associated with cytochrome c release from mitochondria, caspase-3 activation and PARP cleavage. Using caspase inhibitors and Bax and Bak siRNAs, we demonstrate that BH3-M6-induced apoptosis is caspase- and Bax-, but not Bak-dependent. Furthermore, BH3-M6 disrupts Bcl-XL/Bim, Bcl-2/Bim, and Mcl-1/Bim protein-protein interactions and frees up Bim to induce apoptosis in human cancer cells that depend for tumor survival on the neutralization of Bim with Bcl-XL, Bcl-2, or Mcl-1. Finally, BH3-M6 sensitizes cells to apoptosis induced by the proteasome inhibitor CEP-1612. PMID:21148306

  3. Blue Diode Laser Absorption Spectroscopy of Pulsed Magnetron Discharge

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Do, H.T.; Hubička, Zdeněk; Hippler, R.; Jastrabík, Lubomír

    2006-01-01

    Roč. 45, 10B (2006), s. 8090-8094 ISSN 0021-4922 R&D Projects: GA AV ČR 1QS100100563; GA ČR GA202/05/2242 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : laser absorption spectroscopy * pulsed magnetron * sputtering parameters Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.222, year: 2006

  4. Enhanced photoemission from laser-excited plasmonic nano-objects in periodic arrays

    Czech Academy of Sciences Publication Activity Database

    Fedorov, N.; Geoffroy, G.; Duchateau, G.; Štolcová, L.; Proška, J.; Novotný, F.; Domonkos, Mária; Jouin, H.; Martin, P.; Raynaud, M.

    2016-01-01

    Roč. 28, č. 31 (2016), s. 1-15, č. článku 315301. ISSN 0953-8984 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : photoemission * laser excitation * surface plasmon * plasmonics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.649, year: 2016

  5. Getting the sigma in the M_BH - sigma relation right

    Science.gov (United States)

    van der Marel, Roeland

    2017-08-01

    The relation between the mass of the central supermassive black hole (M_BH) and the velocity dispersion of its host spheroid (sigma) is fundamental for our understanding of galaxy evolution and its relation to their nuclei. Correspondingly many HST orbits have been invested in determining accurate M_BH masses. Surprisingly little has been done on standardizing the other axis, i.e. sigma measurements. These values are often derived from various long-slit datasets at different physical radii of the galaxy and no homogeneous definition has been given. We propose to remedy this situation by using our dataset of MUSE and PPAK kinematic maps out to 1 R_e of galaxies with a secure black hole mass. These data are useful for large scale kinematics, however, obtaining velocity dispersions at small radii is not possible. To measure velocity dispersions at small radii we require high-spatial resolution spectroscopy as provided by HST/STIS. In addtion, high-resolution photometric data is needed to define consistent apertures in each galaxy. We therefore propose to use the unique capabilities of HST and harvest years of efforts to collect archival spectroscopic and imaging data for BH host galaxies. This will allow creating a catalog of sigma values, calculated in various ways and at various radii and to re-calibrate the M_BH - sigma relation.

  6. First-principles calculated decomposition pathways for LiBH4 nanoclusters

    Science.gov (United States)

    Huang, Zhi-Quan; Chen, Wei-Chih; Chuang, Feng-Chuan; Majzoub, Eric H.; Ozoliņš, Vidvuds

    2016-05-01

    We analyze thermodynamic stability and decomposition pathways of LiBH4 nanoclusters using grand-canonical free-energy minimization based on total energies and vibrational frequencies obtained from density-functional theory (DFT) calculations. We consider (LiBH4)n nanoclusters with n = 2 to 12 as reactants, while the possible products include (Li)n, (B)n, (LiB)n, (LiH)n, and Li2BnHn; off-stoichiometric LinBnHm (m ≤ 4n) clusters were considered for n = 2, 3, and 6. Cluster ground-state configurations have been predicted using prototype electrostatic ground-state (PEGS) and genetic algorithm (GA) based structural optimizations. Free-energy calculations show hydrogen release pathways markedly differ from those in bulk LiBH4. While experiments have found that the bulk material decomposes into LiH and B, with Li2B12H12 as a kinetically inhibited intermediate phase, (LiBH4)n nanoclusters with n ≤ 12 are predicted to decompose into mixed LinBn clusters via a series of intermediate clusters of LinBnHm (m ≤ 4n). The calculated pressure-composition isotherms and temperature-pressure isobars exhibit sloping plateaus due to finite size effects on reaction thermodynamics. Generally, decomposition temperatures of free-standing clusters are found to increase with decreasing cluster size due to thermodynamic destabilization of reaction products.

  7. MAPLE prepared heterostructures with oligoazomethine: Fullerene derivative mixed layer for photovoltaic applications

    Science.gov (United States)

    Stanculescu, A.; Rasoga, O.; Socol, M.; Vacareanu, L.; Grigoras, M.; Socol, G.; Stanculescu, F.; Breazu, C.; Matei, E.; Preda, N.; Girtan, M.

    2017-09-01

    Mixed layers of azomethine oligomers containing 2,5-diamino-3,4-dicyanothiophene as central unit and triphenylamine (LV5) or carbazol (LV4) at both ends as donor and fullerene derivative, [6,6]-phenyl-C61 butyric acid butyl ester ([C60]PCB-C4) as acceptor, have been prepared by Matrix Assisted Pulsed Laser Evaporation (MAPLE) on glass/ITO and Si substrates. The effect of weight ratio between donor and acceptor (1:1; 1:2) and solvent type (chloroform, dimethylsulphoxide) on the optical (UV-vis transmission/absorption, photoluminescence) and morphological properties of LV4 (LV5): [C60]PCB-C4 mixed layers has been evidenced. Dark and under illumination I-V characteristics of the heterostructures realized with these mixed layers sandwiched between ITO and Al electrodes have revealed a solar cell behavior for the heterostructures prepared with both LV4 and LV5 using chloroform as matrix solvent. The solar cell structure realized with oligomer LV5, glass/ITO/LV5: [C60]PCB-C4 (1:1) has shown the best parameters.

  8. Absolute frequency shifts of iodine cells for laser stabilization

    Czech Academy of Sciences Publication Activity Database

    Lazar, Josef; Hrabina, Jan; Jedlička, Petr; Číp, Ondřej

    2009-01-01

    Roč. 46, č. 5 (2009), s. 450-456 ISSN 0026-1394 R&D Projects: GA AV ČR IAA200650504; GA MŠk(CZ) LC06007; GA MŠk 2C06012; GA AV ČR KAN311610701; GA MPO 2A-1TP1/127; GA MPO FT-TA3/133 Institutional research plan: CEZ:AV0Z20650511 Keywords : laser stabilization * Nd :YAG laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.634, year: 2009

  9. Extreme electronic bandgap modification in laser-crystallized silicon optical fibres

    Czech Academy of Sciences Publication Activity Database

    Healy, N.; Mailis, S.; Bulgakova, Nadezhda M.; Sazio, P.J.A.; Day, T.D.; Sparks, J.R.; Cheng, H.Y.; Badding, J.V.; Peacock, A.C.

    2014-01-01

    Roč. 13, č. 12 (2014), s. 1122-1127 ISSN 1476-1122 Institutional support: RVO:68378271 Keywords : strained silicon * modulation * generation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 36.503, year: 2014

  10. Synthesis, Structure, and Li-Ion Conductivity of LiLa(BH4)3X, X = Cl, Br, I

    DEFF Research Database (Denmark)

    GharibDoust, Seyed Hosein Payandeh; Brighi, Matteo; Sadikin, Yolanda

    2017-01-01

    In this work, a new type of addition reaction between La(BH4)3 and LiX, X = Cl, Br, I, is used to synthesize LiLa(BH4)3Cl and two new compounds LiLa(BH4)3X, X = Br, I. This method increases the amounts of LiLa(BH4)3X and the sample purity. The highest Li-ion conductivity is observed for LiLa(BH4...... with increasing lattice parameter, that is, increasing size of the halide ion in the structure. Thus, we conclude that the sizes of both windows are important for the lithium ion conduction in LiLa(BH4)3X compounds. The lithium ion conductivity is measured over one to three heating cycles and with different...

  11. Soft x-ray free-electron laser induced damage to inorganic scintillators

    Czech Academy of Sciences Publication Activity Database

    Burian, Tomáš; Hájková, Věra; Chalupský, Jaromír; Vyšín, Luděk; Boháček, Pavel; Přeček, Martin; Wild, J.; Özkan, C.; Coppola, N.; Farahani, S.D.; Schulz, J.; Sinn, H.; Tschentscher, T.; Gaudin, J.; Bajt, S.; Tiedtke, K.; Toleikis, S.; Chapman, H.N.; Loch, R.A.; Jurek, M.; Sobierajski, R.; Krzywinski, J.; Moeller, S.; Harmand, M.; Galasso, G.; Nagasono, M.; Saskl, K.; Sovák, P.; Juha, Libor

    2015-01-01

    Roč. 5, č. 2 (2015), 254-264 ISSN 2159-3930 R&D Projects: GA ČR(CZ) GAP108/11/1312; GA MŠk EE2.3.30.0057 Grant - others:OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : fluorescent and luminescent materials * laser damage * free-electron lasers * soft x-rays * laser materials processing Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.657, year: 2015

  12. Numerical analysis of multifrequency erbium-doped fiber ring laser employing a periodic filter and frequency shifter

    Czech Academy of Sciences Publication Activity Database

    Karásek, Miroslav; Bellemare, A.

    2000-01-01

    Roč. 147, č. 2 (2000), s. 115-119 ISSN 1350-2433 Institutional research plan: CEZ:AV0Z2067918 Keywords : optical fibre amplifiers * fibre lasers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.792, year: 2000

  13. Silica Optical Fibers Doped with Nanoparticles for Fiber Lasers and Broadband Sources

    Czech Academy of Sciences Publication Activity Database

    Kašík, Ivan; Peterka, Pavel; Mrázek, Jan; Honzátko, Pavel

    2016-01-01

    Roč. 12, č. 3 (2016), s. 277-290 ISSN 1573-4137 R&D Projects: GA ČR GP13-37368P; GA ČR GA14-35256S Institutional support: RVO:67985882 Keywords : Fiber laser * Ceramics * Nanocrystal Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.062, year: 2016

  14. In-plane heterostructures of Sb/Bi with high carrier mobility

    Science.gov (United States)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  15. Progress in optical-field-ionization soft x-ray lasers at LOA

    Czech Academy of Sciences Publication Activity Database

    Mocek, Tomáš; Sebban, S.; Bettaibi, I.; Zeitoun, P.; Faivre, G.; Cros, B.; Maynard, G.; Butler, A.; McKenna, C.M.; Spence, D.J.; Gonsavles, A.J.; Hooker, S.M.; Vorontsov, V.; Hallou, S.; Fajardo, M.; Kazamias, S.; Le Pape, S.; Mercere, P.; Morlens, A.S.; Valentin, C.; Balcou, P.

    2005-01-01

    Roč. 23, - (2005), s. 351-356 ISSN 0263-0346 Grant - others:EU(XE) HPRI-1999-CT-00086; EU(XE) HPMF-CT-2002-01554 Institutional research plan: CEZ:AV0Z10100523 Keywords : collisional excitation * femtosecond * guiding * high harmonic amplification * x-ray laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.590, year: 2005

  16. Enhanced efficiency of plasma acceleration in the laser-induced cavity pressure acceleration scheme

    Czech Academy of Sciences Publication Activity Database

    Badziak, J.; Rosinski, M.; Jabłonski, S.; Pisarczyk, T.; Chodukowski, T.; Parys, P.; Raczka, P.; Krouský, Eduard; Ullschmied, Jiří; Liska, R.; Kucharik, M.

    2015-01-01

    Roč. 57, č. 1 (2015), 014007 ISSN 0741-3335 R&D Projects: GA MŠk(CZ) LC528; GA MŠk LM2010014 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser ion acceleration * laser plasma * fast ignition * ion diagnostics * LICPA Subject RIV: BL - Plasma and Gas Discharge Physics; BH - Optics, Masers, Lasers (UFP-V) Impact factor: 2.404, year: 2015

  17. The BH3 alpha-helical mimic BH3-M6 disrupts Bcl-X(L), Bcl-2, and MCL-1 protein-protein interactions with Bax, Bak, Bad, or Bim and induces apoptosis in a Bax- and Bim-dependent manner.

    Science.gov (United States)

    Kazi, Aslamuzzaman; Sun, Jiazhi; Doi, Kenichiro; Sung, Shen-Shu; Takahashi, Yoshinori; Yin, Hang; Rodriguez, Johanna M; Becerril, Jorge; Berndt, Norbert; Hamilton, Andrew D; Wang, Hong-Gang; Sebti, Saïd M

    2011-03-18

    A critical hallmark of cancer cell survival is evasion of apoptosis. This is commonly due to overexpression of anti-apoptotic proteins such as Bcl-2, Bcl-X(L), and Mcl-1, which bind to the BH3 α-helical domain of pro-apoptotic proteins such as Bax, Bak, Bad, and Bim, and inhibit their function. We designed a BH3 α-helical mimetic BH3-M6 that binds to Bcl-X(L) and Mcl-1 and prevents their binding to fluorescently labeled Bak- or Bim-BH3 peptides in vitro. Using several approaches, we demonstrate that BH3-M6 is a pan-Bcl-2 antagonist that inhibits the binding of Bcl-X(L), Bcl-2, and Mcl-1 to multi-domain Bax or Bak, or BH3-only Bim or Bad in cell-free systems and in intact human cancer cells, freeing up pro-apoptotic proteins to induce apoptosis. BH3-M6 disruption of these protein-protein interactions is associated with cytochrome c release from mitochondria, caspase-3 activation and PARP cleavage. Using caspase inhibitors and Bax and Bak siRNAs, we demonstrate that BH3-M6-induced apoptosis is caspase- and Bax-, but not Bak-dependent. Furthermore, BH3-M6 disrupts Bcl-X(L)/Bim, Bcl-2/Bim, and Mcl-1/Bim protein-protein interactions and frees up Bim to induce apoptosis in human cancer cells that depend for tumor survival on the neutralization of Bim with Bcl-X(L), Bcl-2, or Mcl-1. Finally, BH3-M6 sensitizes cells to apoptosis induced by the proteasome inhibitor CEP-1612.

  18. Heterostructures based on inorganic and organic van der Waals systems

    International Nuclear Information System (INIS)

    Lee, Gwan-Hyoung; Lee, Chul-Ho; Zande, Arend M. van der; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Hone, James; Nuckolls, Colin; Heinz, Tony F.; Kim, Philip

    2014-01-01

    The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS 2 heterostructures for memory devices; graphene/MoS 2 /WSe 2 /graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors

  19. Pr:YLF orange laser investigation at cryogenic temperature

    Czech Academy of Sciences Publication Activity Database

    Fibrich, Martin; Šulc, J.; Jelínková, H.

    2015-01-01

    Roč. 12, č. 9 (2015), 1-23, č. článku 095801. ISSN 1612-2011 R&D Projects: GA MŠk ED1.1.00/02.0061 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061 Institutional support: RVO:68378271 Keywords : Pr:YLF * diode pumping * InGaN laser diode * cryogenic temperature Subject RIV: BH - Optics, Masers, Laser s Impact factor: 2.391, year: 2015

  20. Cryogenic Yb:YAG laser pumped by VBG-stabilized narrowband laser diode at 969 nm

    Czech Academy of Sciences Publication Activity Database

    Jambunathan, Venkatesan; Horáčková, Lucie; Navrátil, Petr; Lucianetti, Antonio; Mocek, Tomáš

    2016-01-01

    Roč. 128, č. 12 (2016), s. 1328-1331 ISSN 1041-1135 R&D Projects: GA MŠk EE2.3.20.0143; GA ČR GA14-01660S Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : Diode-pumped * cryogenic * volume Bragg grating * Yb doped * solid state lasers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.375, year: 2016

  1. Chemical oxygen-iodine laser with atomic iodine generated via fluorine atoms

    Czech Academy of Sciences Publication Activity Database

    Jirásek, Vít; Čenský, Miroslav; Špalek, Otomar; Kodymová, Jarmila; Picková, Irena; Jakubec, Ivo

    2008-01-01

    Roč. 345, č. 1 (2008), 14-22 ISSN 0301-0104 R&D Projects: GA ČR GA202/05/0359 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z40320502 Keywords : atomic iodine * atomic fluorine * chemical oxygen–iodine laser * COIL Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.961, year: 2008

  2. Skin depth theory explaining anomalous picosecond-terawatt laser plasma interaction

    Czech Academy of Sciences Publication Activity Database

    Hora, H.; Osman, F.; Höpfl, R.; Badziak, J.; Parys, P.; Wolowski, J.; Woryna, E.; Boody, F.; Jungwirth, Karel; Králiková, Božena; Krása, Josef; Láska, Leoš; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Ullschmied, Jiří

    2002-01-01

    Roč. 52, Suppl. D (2002), s. D349-D359 ISSN 0011-4626. [Plasma Physics and Technology. Prague, 10.06.2002-13.06.2002] R&D Projects: GA ČR GA202/00/1217 Institutional research plan: CEZ:AV0Z1010921 Keywords : laser plasma * ion acceleration Subject RIV: BH - Optics, Masers, Laser s Impact factor: 0.311, year: 2002

  3. Feedback control of laser welding based on frequency analysis of light emissions and adaptive beam shaping

    Czech Academy of Sciences Publication Activity Database

    Mrňa, Libor; Šarbort, Martin; Řeřucha, Šimon; Jedlička, Petr

    2012-01-01

    Roč. 39, NOV (2012), s. 784-791 ISSN 1875-3892. [LANE 2012. Laser Assisted Net Shape Engineering /7./ International Conference on Photonic Technologies. Fürth, 12.11.2012-15.12.2012] Institutional support: RVO:68081731 Keywords : laser welding * feedback control * frequency analysis * adaptive beam shaping Subject RIV: BH - Optics, Masers, Lasers

  4. Cascade Type-I Quantum Well GaSb-Based Diode Lasers

    Directory of Open Access Journals (Sweden)

    Leon Shterengas

    2016-05-01

    Full Text Available Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm.

  5. Molecular epidemiology, genotype-phenotype correlation and BH4 responsiveness in Spanish patients with phenylketonuria.

    Science.gov (United States)

    Aldámiz-Echevarría, Luis; Llarena, Marta; Bueno, María A; Dalmau, Jaime; Vitoria, Isidro; Fernández-Marmiesse, Ana; Andrade, Fernando; Blasco, Javier; Alcalde, Carlos; Gil, David; García, María C; González-Lamuño, Domingo; Ruiz, Mónica; Ruiz, María A; Peña-Quintana, Luis; González, David; Sánchez-Valverde, Felix; Desviat, Lourdes R; Pérez, Belen; Couce, María L

    2016-08-01

    Phenylketonuria (PKU), the most common inborn error of amino acid metabolism, is caused by mutations in the phenylalanine-4-hydroxylase (PAH) gene. This study aimed to assess the genotype-phenotype correlation in the PKU Spanish population and the usefulness in establishing genotype-based predictions of BH4 responsiveness in our population. It involved the molecular characterization of 411 Spanish PKU patients: mild hyperphenylalaninemia non-treated (mild HPA-NT) (34%), mild HPA (8.8%), mild-moderate (20.7%) and classic (36.5%) PKU. BH4 responsiveness was evaluated using a 6R-BH4 loading test. We assessed genotype-phenotype associations and genotype-BH4 responsiveness in our population according to literature and classification of the mutations. The mutational spectrum analysis showed 116 distinct mutations, most missense (70.7%) and located in the catalytic domain (62.9%). The most prevalent mutations were c.1066-11G>A (9.7%), p.Val388Met (6.6%) and p.Arg261Gln (6.3%). Three novel mutations (c.61-13del9, p.Ile283Val and p.Gly148Val) were reported. Although good genotype-phenotype correlation was observed, there was no exact correlation for some genotypes. Among the patients monitored for the 6R-BH4 loading test: 102 were responders (87, carried either one or two BH4-responsive alleles) and 194 non-responders (50, had two non-responsive mutations). More discrepancies were observed in non-responders. Our data reveal a great genetic heterogeneity in our population. Genotype is quite a good predictor of phenotype and BH4 responsiveness, which is relevant for patient management, treatment and follow-up.

  6. Ge/Si core/multi shell heterostructure FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  7. 2D Vertical Heterostructures for Novel Tunneling Device Applications

    Science.gov (United States)

    2017-03-01

    2D Vertical Heterostructures for Novel Tunneling Device Applications Philip M. Campbell, Christopher J. Perini, W. Jud Ready, and Eric M. Vogel...School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA, USA 30332 Abstract: Vertical heterostructures...digital logic, signal processing, analog-to-digital conversion, and high-frequency communications, vertical heterostructure tunneling devices have

  8. Surface modification of polymethylmethacrylate irradiated with 60 fs single laser pulses

    Czech Academy of Sciences Publication Activity Database

    Klinger, D.; Sobierajski, R.; Nietubyc, R.; Krzywinski, J.; Pelka, J.; Juha, Libor; Jurek, M.; Zymierska, D.; Guizard, S.; Merdji, H.

    2009-01-01

    Roč. 78, Suppl. 10 (2009), S71-S74 ISSN 0969-806X R&D Projects: GA AV ČR KAN300100702; GA MŠk LC510; GA MŠk(CZ) LC528; GA MŠk LA08024; GA AV ČR IAA400100701 Institutional research plan: CEZ:AV0Z10100523 Keywords : polymethylmethacrylate (PMMA) * IR laser ablation * femtosecond laser pulse Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.149, year: 2009

  9. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  10. Processing Interband Cascade Laser for High Temperature CW Operation

    National Research Council Canada - National Science Library

    Tober, Richard

    2004-01-01

    A narrow ridge-waveguide mid-IR interband cascade laser based on Type-II InAs/GaInSh heterostructures processed with a thick gold heat spreading layer operated CW at temperatures ranging from 80 K to 214.4 K...

  11. Application of the 3-frame interferometry and crater replica method for investigation of laser accelerated macroparticles interacting with massive targets in the Prague Asterix Laser System(PALS) experimenty

    Czech Academy of Sciences Publication Activity Database

    Borodziuk, S.; Kasperczuk, A.; Pisarczyk, T.; Demchenko, N. N.; Gus'kov, S. Yu.; Rozanov, V. B.; Limpouch, Jiří; Ullschmied, Jiří; Rohlena, Karel; Skála, Jiří; Kondrashov, V. N.; Pisarczyk, P.; Kálal, M.

    2004-01-01

    Roč. 49, č. 3 (2004), s. 385-403 ISSN 0078-5466 R&D Projects: GA MŠk LN00A100 Institutional research plan: CEZ:AV0Z2043910; CEZ:AV0Z1010921 Keywords : laser-produced plasma * three-frame interferometry * optica l microscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.308, year: 2004

  12. Interaction of doughnut-shaped laser pulses with glasses

    Czech Academy of Sciences Publication Activity Database

    Zhukov, V.P.; Rubenchik, A.M.; Fedoruk, M.P.; Bulgakova, Nadezhda M.

    2017-01-01

    Roč. 34, č. 2 (2017), s. 463-471 ISSN 0740-3224 R&D Projects: GA MŠk LO1602; GA MŠk EF15_003/0000445; GA MŠk LM2015086 Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445 Institutional support: RVO:68378271 Keywords : femtosecond-laser * transparent materials * wave-guides * photonic devices * fused-silica * dielectrics * media * filamentation * fabrication * ionization Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.843, year: 2016

  13. Experimental evidence of multimaterial jet formation with lasers

    Czech Academy of Sciences Publication Activity Database

    Nicolai, Ph.; Stenz, C.; Tikhonchuk, V.; Kasperczuk, A.; Pisarczyk, T.; Juha, Libor; Krouský, Eduard; Mašek, Karel; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Kmetík, Viliam; Ullschmied, Jiří; Kalal, M.; Klir, D.; Kravarik, J.; Kubeš, P.; Rezac, K.; Pisarczyk, P.; Tabakhoff, E.

    2010-01-01

    Roč. 17, č. 11 (2010), 112903/1-112903/9 ISSN 1070-664X R&D Projects: GA MŠk(CZ) LC528; GA ČR GAP208/10/2302; GA MŠk LA08024; GA AV ČR IAAX00100903; GA MŠk(CZ) ME10046; GA MŠk(CZ) 7E09092 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser produced plasma jets * laser plasma ablation * interferometry Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.320, year: 2010

  14. Photopatterning of heterostructured polymer Langmuir-Blodgett films

    International Nuclear Information System (INIS)

    Li Tiesheng; Mitsuishi, Masaya; Miyashita, Tokuji

    2008-01-01

    Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication

  15. An Integrated Bioinformatics and Computational Biology Approach Identifies New BH3-Only Protein Candidates.

    Science.gov (United States)

    Hawley, Robert G; Chen, Yuzhong; Riz, Irene; Zeng, Chen

    2012-05-04

    In this study, we utilized an integrated bioinformatics and computational biology approach in search of new BH3-only proteins belonging to the BCL2 family of apoptotic regulators. The BH3 (BCL2 homology 3) domain mediates specific binding interactions among various BCL2 family members. It is composed of an amphipathic α-helical region of approximately 13 residues that has only a few amino acids that are highly conserved across all members. Using a generalized motif, we performed a genome-wide search for novel BH3-containing proteins in the NCBI Consensus Coding Sequence (CCDS) database. In addition to known pro-apoptotic BH3-only proteins, 197 proteins were recovered that satisfied the search criteria. These were categorized according to α-helical content and predictive binding to BCL-xL (encoded by BCL2L1) and MCL-1, two representative anti-apoptotic BCL2 family members, using position-specific scoring matrix models. Notably, the list is enriched for proteins associated with autophagy as well as a broad spectrum of cellular stress responses such as endoplasmic reticulum stress, oxidative stress, antiviral defense, and the DNA damage response. Several potential novel BH3-containing proteins are highlighted. In particular, the analysis strongly suggests that the apoptosis inhibitor and DNA damage response regulator, AVEN, which was originally isolated as a BCL-xL-interacting protein, is a functional BH3-only protein representing a distinct subclass of BCL2 family members.

  16. Graphene Q-Switched Compact Yb:YAG Laser

    Czech Academy of Sciences Publication Activity Database

    Serres, J.M.; Jambunathan, Venkatesan; Mateos, X.; Loiko, P.; Lucianetti, Antonio; Mocek, Tomáš; Yumashev, K.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F.

    2015-01-01

    Roč. 7, č. 5 (2015), s. 1-8, č. článku 1503307. ISSN 1943-0655 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA ČR GA14-01660S Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : graphene * saturable absorber * Q-switched laser Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 2.177, year: 2015

  17. X-ray emission from high-intensity interaction of picosecond and subnanosecond laser pulses with solid targets

    Czech Academy of Sciences Publication Activity Database

    Badziak, J.; Jabloňski, S.; Makowski, J.; Parys, P.; Ryc, L.; Vankov, A. B.; Wolowski, J.; Woryna, E.; Juha, Libor; Krása, Josef

    2002-01-01

    Roč. 32, 1-2 (2002), s. 41-46 ISSN 0078-5466 Grant - others:KBN(PL) 2PO3B08219 Institutional research plan: CEZ:AV0Z1010921 Keywords : soft x-ray emission * laser produced plasma * 1-ps and 0.5ns laser pulses Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.291, year: 2002

  18. Measurements of energetic ions produced by high-energy laser pulses by means of solid-state nuclear track detectors

    Czech Academy of Sciences Publication Activity Database

    Szydlowski, A.; Badziak, A.; Parys, P.; Wolowski, J.; Woryna, E.; Jungwirth, Karel; Králiková, Božena; Krása, Josef; Láska, Leoš; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Ullschmied, Jiří; Boody, F. D.; Gammino, S.; Torrisi, L.

    2004-01-01

    Roč. 7, č. 3 (2004), s. 327-332 ISSN 1093-3611 Institutional research plan: CEZ:AV0Z1010921 Keywords : iodine laser * nuclear track detectors * ions Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.194, year: 2004

  19. THE M bh-σ DIAGRAM AND THE OFFSET NATURE OF BARRED ACTIVE GALAXIES

    International Nuclear Information System (INIS)

    Graham, Alister W.; Li Ihui

    2009-01-01

    From a sample of 50 predominantly inactive galaxies with direct supermassive black hole mass measurements, it has recently been established that barred galaxies tend to reside rightward of the M bh -σ relation defined by nonbarred galaxies. Either black holes in barred galaxies tend to be anemic or the central velocity dispersions in these galaxies have a tendency to be elevated by the presence of the bar. The latter option is in accord with studies connecting larger velocity dispersions in galaxies with old bars, while the former scenario is at odds with the observation that barred galaxies do not deviate from the M bh -luminosity relation. Using a sample of 88 galaxies with active galactic nuclei, whose supermassive black hole masses have been estimated from their associated emission lines, we reveal for the first time that they also display this same general behavior in the M bh -σ diagram depending on the presence of a bar or not. A new symmetrical and nonsymmetrical 'barless' M bh -σ relation is derived using 82 nonbarred galaxies. The barred galaxies are shown to reside on or up to ∼1 dex below this relation. This may explain why narrow-line Seyfert 1 galaxies appear offset from the 'barless' M bh -σ relation, and has far-reaching implications given that over half of the disk galaxy population are barred.

  20. Novel features of non-linear Raman instability in a laser plasma

    Czech Academy of Sciences Publication Activity Database

    Mašek, Martin; Rohlena, Karel

    2010-01-01

    Roč. 56, č. 1 (2010), s. 79-90 ISSN 1434-6060 R&D Projects: GA MŠk(CZ) 7E08099; GA MŠk(CZ) LC528; GA ČR GA202/05/2475 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser plasma * non-linear Raman instability Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.513, year: 2010

  1. Spray generator of singlet oxygen for a chemical oxygen-iodine laser

    Czech Academy of Sciences Publication Activity Database

    Jirásek, Vít; Hrubý, Jan; Špalek, Otomar; Čenský, Miroslav; Kodymová, Jarmila

    2010-01-01

    Roč. 100, č. 4 (2010), s. 779-791 ISSN 0946-2171 Grant - others:European Office of Aerospace R&D(US) FA8655-09-1-3091 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20760514 Keywords : spray generator of singlet oxygen * singlet oxygen * chemical oxygen-iodine laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.239, year: 2010

  2. Characteristics and applications of ion streams produced by long-pulse lasers

    Czech Academy of Sciences Publication Activity Database

    Rohlena, Karel; Láska, Leoš; Jungwirth, Karel; Krása, Josef; Krouský, Eduard; Mašek, Karel; Pfeifer, Miroslav; Ullschmied, Jiří; Badziak, J.; Parys, P.; Wolowski, J.; Gammino, S.; Torrisi, L.; Boody, F. P.

    2005-01-01

    Roč. 47, - (2005), B503-B512 ISSN 0741-3335. [EPS Plasma Physics Conference /32nd./. Tarragona, 27.06.2005-01.07.2005] R&D Projects: GA ČR(CZ) GA202/05/2475 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser plasma * ion sources * implantation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.902, year: 2005

  3. Gemini spectroscopy of the outer disk star cluster BH176

    Science.gov (United States)

    Sharina, M. E.; Donzelli, C. J.; Davoust, E.; Shimansky, V. V.; Charbonnel, C.

    2014-10-01

    Context. BH176 is an old metal-rich star cluster. It is spatially and kinematically consistent with belonging to the Monoceros Ring. It is larger in size and more distant from the Galactic plane than typical open clusters, and it does not belong to the Galactic bulge. Aims: Our aim is to determine the origin of this unique object by accurately determining its distance, metallicity, and age. The best way to reach this goal is to combine spectroscopic and photometric methods. Methods: We present medium-resolution observations of red clump and red giant branch stars in BH176 obtained with the Gemini South Multi-Object Spectrograph. We derive radial velocities, metallicities, effective temperatures, and surface gravities of the observed stars and use these parameters to distinguish member stars from field objects. Results: We determine the following parameters for BH176: Vh = 0 ± 15 km s-1, [Fe/H] = -0.1 ± 0.1, age 7 ± 0.5 Gyr, E(V - I) = 0.79 ± 0.03, distance 15.2 ± 0.2 kpc, α-element abundance [α/Fe] ~ 0.25 dex (the mean of [Mg/Fe], and [Ca/Fe]). Conclusions: BH176 is a member of old Galactic open clusters that presumably belong to the thick disk. It may have originated as a massive star cluster after the encounter of the forming thin disk with a high-velocity gas cloud or as a satellite dwarf galaxy. Appendix A is available in electronic form at http://www.aanda.org

  4. A review of nano-optics in metamaterial hybrid heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mahi R. [Department of Physics and Astronomy, Western University, London N6G 3K7 (Canada)

    2014-03-31

    We present a review for the nonlinear nano-optics in quantum dots doped in a metamaterial heterostructure. The heterostructure is formed by depositing a metamaterial on a dielectric substrate and ensemble of noninteracting quantum dots are doped near the heterostructure interface. It is shown that there is enhancement of the second harmonic generation due to the surface plasmon polaritons field present at the interface.

  5. Electron kinetics in a laser plasma with increased collisionality

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Rohlena, Karel

    2010-01-01

    Roč. 165, 6-10 (2010), s. 405-411 ISSN 1042-0150 Institutional research plan: CEZ:AV0Z10100523 Keywords : ion sources * stimulated Raman scattering * Vlasov-Maxwell model * Raman cascading Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.660, year: 2010

  6. Interaction of a laser-produced copper plasma jet with ambient plastic plasma

    Czech Academy of Sciences Publication Activity Database

    Kasperczuk, A.; Pisarczyk, T.; Badziak, J.; Borodziuk, S.; Chodukowski, T.; Gus’kov, S.Yu.; Demchenko, N. N.; Klir, D.; Kravarik, J.; Kubes, P.; Rezac, K.; Ullschmied, Jiří; Krouský, Eduard; Mašek, Karel; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Pisarczyk, P.

    2011-01-01

    Roč. 53, č. 9 (2011), 095003-095003 ISSN 0741-3335 R&D Projects: GA MŠk(CZ) 7E09092; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z20430508; CEZ:AV0Z10100523 Keywords : laser produced-plasma jets * PALS laser * laser ablation * copper plasma * plastic plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.425, year: 2011 http://iopscience.iop.org/0741-3335/53/9/095003/pdf/0741-3335_53_9_095003.pdf

  7. Laser irradiations of advanced targets promoting absorption resonance for ion acceleration in TNSA regime

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Calcagno, L.; Giulietti, D.; Cutroneo, Mariapompea; Zimbone, M.; Skála, Jiří

    2015-01-01

    Roč. 355, JUL (2015), s. 221-226 ISSN 0168-583X Institutional support: RVO:68378271 ; RVO:61389005 Keywords : "p"-polarization * laser-generated plasma * TNSA regtime * ion acceleration in plasma Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BH - Optics, Masers, Lasers (FZU-D) Impact factor: 1.389, year: 2015

  8. X-ray microscopy of living multicellular organisms with the Prague Asterix Iodine Laser System

    Czech Academy of Sciences Publication Activity Database

    Desai, T.; Batani, D.; Bernadinello, A.; Poletti, G.; Orsini, F.; Ullschmied, Jiří; Juha, Libor; Skála, Jiří; Králiková, Božena; Krouský, Eduard; Pfeifer, Miroslav; Kadlec, Christelle; Mocek, Tomáš; Präg R., Ansgar; Renner, Oldřich; Cotelli, F.; Lamia, C. L.; Zullini, A.

    2003-01-01

    Roč. 21, č. 4 (2003), s. 511-516 ISSN 0263-0346 R&D Projects: GA MŠk LN00A100 Institutional research plan: CEZ:AV0Z2043910 Keywords : atomic force miscroscopy, laser-produced plasmas, multicellular microorganisms Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.646, year: 2003

  9. Dramatic enhancement of XUV laser output using a multi-mode, gas-filled capillary waveguide

    Czech Academy of Sciences Publication Activity Database

    Mocek, Tomáš; McKenna, C.M.; Cros, B.; Sebban, S.; Spence, D.J.; Maynard, G.; Bettaibi, I.; Vorontsov, V.; Gonsavles, A.J.; Hooker, S.M.

    2005-01-01

    Roč. 71, 01 (2005), 013804/1-013804/5 ISSN 1050-2947 Grant - others:EU(XE) HPRI-1999-CT-00086; EU(XE) HPMF-CT-2002-01554 Institutional research plan: CEZ:AV0Z10100523 Keywords : waveguiding * x-ray laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.997, year: 2005

  10. Laser Absorption and Energy Transfer in Foams of Various Pore Structures and Chemical Compositions,

    Czech Academy of Sciences Publication Activity Database

    Limpouch, J.; Borisenko, N.G.; Demchenko, N. N.; Gus´kov, S.Y.; Kasperczuk, A.; Khalenkov, A.M.; Kondrashov, V. N.; Krouský, Eduard; Kuba, J.; Mašek, Karel; Merkul´ev, A.Y.; Nazarov, W.; Pisarczyk, P.; Pisarczyk, T.; Pfeifer, Miroslav; Renner, Oldřich; Rozanov, V. B.

    2006-01-01

    Roč. 133, - (2006), s. 457-459 ISSN 1155-4339 R&D Projects: GA MŠk(CZ) LC528 Grant - others:INTAS(XE) 01-0572 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser absorption * energy transfer * foam Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.315, year: 2006

  11. Laser tests of silicon detectors

    Czech Academy of Sciences Publication Activity Database

    Doležal, Z.; Escobar, C.; Gadomski, S.; Garcia, C.; Gonzales, S.; Kodyš, Peter; Kubík, P.; Lacasta, C.; Marti, S.; Mitsou, V. A.; Moorhead, G. F.; Phillips, P. W.; Řezníček, P.; Slavík, Radan

    2007-01-01

    Roč. 573, 1/2 (2007), s. 12-15 ISSN 0168-9002. [International Conference on Position-Sensitive Detectors - PSD /7./. Liverpool, 12.09.2005-16.09.2005] R&D Projects: GA AV ČR(CZ) KJB200670601 Institutional research plan: CEZ:AV0Z20670512 Keywords : semiconductor devices Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.114, year: 2007

  12. Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, Mariapompea; Macková, Anna; Torrisi, L.; Lavrentiev, Vasyl

    2017-01-01

    Roč. 35, č. 1 (2017), s. 72-80 ISSN 0263-0346 R&D Projects: GA MŠk LM2015056; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : laser ion implantation * post-acceleration Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.420, year: 2016

  13. Modeling and experimental demonstration of ultracompact multiwavelength distributed Fabry-Pérot fiber lasers

    Czech Academy of Sciences Publication Activity Database

    Brochu, G.; LaRochelle, S.; Slavík, Radan

    2005-01-01

    Roč. 23, č. 1 (2005), s. 44-53 ISSN 0733-8724. [OFC'04 - Optical Fiber Communication Conference. Los Angeles, 22.02.2004-27 .02.2004] Institutional research plan: CEZ:AV0Z20670512 Keywords : optical fibre amplifiers * Bragg gratings * distributed feedback lasers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.077, year: 2005

  14. Biological and physical properties of pulsed-laser-deposited zirconia/hydroxyapatite on titanium: in vitro study

    Czech Academy of Sciences Publication Activity Database

    Teuberová, Z.; Seydlová, M.; Dostálová, T.; Dvořánková, B.; Smetana, K. Jr.; Jelínek, Miroslav; Mašínová, Petra; Kocourek, Tomáš; Kolářová, K.; Wilson, J.

    2007-01-01

    Roč. 17, č. 1 (2007), s. 45-49 ISSN 1054-660X R&D Projects: GA MZd NR8512 Institutional research plan: CEZ:AV0Z10100522 Keywords : dental implants * hydroxyapatite * titanium * laser deposition * PLD Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.696, year: 2007

  15. BCL2-BH4 antagonist BDA-366 suppresses human myeloma growth.

    Science.gov (United States)

    Deng, Jiusheng; Park, Dongkyoo; Wang, Mengchang; Nooka, Ajay; Deng, Qiaoya; Matulis, Shannon; Kaufman, Jonathan; Lonial, Sagar; Boise, Lawrence H; Galipeau, Jacques; Deng, Xingming

    2016-05-10

    Multiple myeloma (MM) is a heterogeneous plasma cell malignancy and remains incurable. B-cell lymphoma-2 (BCL2) protein correlates with the survival and the drug resistance of myeloma cells. BH3 mimetics have been developed to disrupt the binding between BCL2 and its pro-apoptotic BCL2 family partners for the treatment of MM, but with limited therapeutic efficacy. We recently identified a small molecule BDA-366 as a BCL2 BH4 domain antagonist, converting it from an anti-apoptotic into a pro-apoptotic molecule. In this study, we demonstrated that BDA-366 induces robust apoptosis in MM cell lines and primary MM cells by inducing BCL2 conformational change. Delivery of BDA-366 substantially suppressed the growth of human MM xenografts in NOD-scid/IL2Rγnull mice, without significant cytotoxic effects on normal hematopoietic cells or body weight. Thus, BDA-366 functions as a novel BH4-based BCL2 inhibitor and offers an entirely new tool for MM therapy.

  16. Fabrication of colloidal crystal heterostructures by a room temperature floating self-assembly method

    International Nuclear Information System (INIS)

    Wang Aijun; Chen Shengli; Dong Peng

    2011-01-01

    Highlights: → Opal colloidal crystal heterostructure of several square centimeters in area was fabricated within only tens of minutes. → A fabricated colloidal crystal heterostructure was composed of a PS opal and a TiO 2 inverse opal crystal films. → The photonic heterostructure had two photonic-band gaps. → The relative position of the two photonic-band gaps can be controlled by the size of PS microspheres used to fabricate the photonic heterostructure. - Abstract: Photonic crystal heterostructures were fabricated through a room temperature floating self-assembly (RTFSA) method recently developed by our research group. Applying this method, opal colloidal crystal heterostructures of several square centimeters in area were fabricated within tens of minutes without special facilities, and a heterostructure composed of a PS opal and a TiO 2 inverse opal crystal films was fabricated. SEM image of the PS opal-TiO 2 inverse opal heterostructure showed the ordered growth of the top opal film of the heterostructure was hardly disturbed by the cracks in the TiO 2 inverse opal film. The UV-vis transmission spectra indicated that the photonic heterostructures had two photonic-band gaps, and the relative position of two photonic-band gaps can be controlled by the size of PS microspheres used to fabricated the photonic heterostructures.

  17. Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

    Science.gov (United States)

    Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

    2017-11-01

    A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

  18. On electron betatron motion and electron injection in laser wakefield accelerators

    Czech Academy of Sciences Publication Activity Database

    Matsuoka, T.; McGuffey, C.; Cummings, P.G.; Bulanov, S.S.; Chvykov, V.; Dollar, F.; Horovitz, Y.; Kalinchenko, Galina; Krushelnick, K.; Rousseau, P.; Thomas, A.G.R.; Yanovsky, V.; Maksimchuk, A.

    2015-01-01

    Roč. 56, č. 8 (2015), s. 1-8 ISSN 0741-3335 Institutional support: RVO:68378271 Keywords : accelerators * beams and electromagnetism * nuclear physics * plasma physics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.404, year: 2015

  19. New possibilities for efficient laser surface treatment by diode-pumped kW-class lasers

    Czech Academy of Sciences Publication Activity Database

    Brajer, Jan; Švábek, Roman; Rostohar, Danijela; Divoký, Martin; Lucianetti, Antonio; Mocek, Tomáš; Madl, J.; Pitrmuc, Z.

    2015-01-01

    Roč. 2015, Aug (2015), s. 1-3 ISSN 1823-3430 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : amplifier Subject RIV: BH - Optics, Masers, Lasers

  20. Frequency Noise Properties of Lasers for Interferometry in Nanometrology

    Czech Academy of Sciences Publication Activity Database

    Hrabina, Jan; Lazar, Josef; Holá, Miroslava; Číp, Ondřej

    2013-01-01

    Roč. 13, č. 2 (2013), s. 2206-2219 ISSN 1424-8220 R&D Projects: GA ČR GPP102/11/P820; GA ČR GA102/09/1276; GA AV ČR KAN311610701; GA MŠk ED0017/01/01; GA MŠk(CZ) LC06007 Institutional support: RVO:68081731 Keywords : nanometrology * laser noise * interferometry * nanopositioning * AFM Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.048, year: 2013

  1. Atomic layer MoS2-graphene van der Waals heterostructure nanomechanical resonators.

    Science.gov (United States)

    Ye, Fan; Lee, Jaesung; Feng, Philip X-L

    2017-11-30

    Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be hetero-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS 2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize an array of MoS 2 -graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ∼100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS 2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS 2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and provides opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.

  2. Interaction of a putative BH3 domain of clusterin with anti-apoptotic Bcl-2 family proteins as revealed by NMR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Dong-Hwa; Ha, Ji-Hyang [Medical Proteomics Research Center, KRIBB, Daejeon 305-806 (Korea, Republic of); Kim, Yul [Department of Bio and Brain Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Bae, Kwang-Hee [Medical Proteomics Research Center, KRIBB, Daejeon 305-806 (Korea, Republic of); Park, Jae-Yong [Department of Physiology, Institute of Health Science, School of Medicine, Gyeongsang National University, Jinju, Gyeongnam 660-751 (Korea, Republic of); Choi, Wan Sung [Department of Anatomy and Neurobiology, Institute of Health Science, School of Medicine, Gyeongsang National University, Jinju, Gyeongnam 660-751 (Korea, Republic of); Yoon, Ho Sup [Division of Structural and Computational Biology, School of Biological Sciences, Nanyang Technological University, 60 Nanyang Drive, Singapore 637511 (Singapore); Park, Sung Goo; Park, Byoung Chul [Medical Proteomics Research Center, KRIBB, Daejeon 305-806 (Korea, Republic of); Yi, Gwan-Su, E-mail: gsyi@kaist.ac.kr [Department of Bio and Brain Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Chi, Seung-Wook, E-mail: swchi@kribb.re.kr [Medical Proteomics Research Center, KRIBB, Daejeon 305-806 (Korea, Republic of)

    2011-05-20

    Highlights: {yields} Identification of a conserved BH3 motif in C-terminal coiled coil region of nCLU. {yields} The nCLU BH3 domain binds to BH3 peptide-binding grooves in both Bcl-X{sub L} and Bcl-2. {yields} A conserved binding mechanism of nCLU BH3 and the other pro-apoptotic BH3 peptides with Bcl-X{sub L}. {yields} The absolutely conserved Leu323 and Asp328 of nCLU BH3 domain are critical for binding to Bcl-X{sub L.} {yields} Molecular understanding of the pro-apoptotic function of nCLU as a novel BH3-only protein. -- Abstract: Clusterin (CLU) is a multifunctional glycoprotein that is overexpressed in prostate and breast cancers. Although CLU is known to be involved in the regulation of apoptosis and cell survival, the precise molecular mechanism underlying the pro-apoptotic function of nuclear CLU (nCLU) remains unclear. In this study, we identified a conserved BH3 motif in C-terminal coiled coil (CC2) region of nCLU by sequence analysis and characterized the molecular interaction of the putative nCLU BH3 domain with anti-apoptotic Bcl-2 family proteins by nuclear magnetic resonance (NMR) spectroscopy. The chemical shift perturbation data demonstrated that the nCLU BH3 domain binds to pro-apoptotic BH3 peptide-binding grooves in both Bcl-X{sub L} and Bcl-2. A structural model of the Bcl-X{sub L}/nCLU BH3 peptide complex reveals that the binding mode is remarkably similar to those of other Bcl-X{sub L}/BH3 peptide complexes. In addition, mutational analysis confirmed that Leu323 and Asp328 of nCLU BH3 domain, absolutely conserved in the BH3 motifs of BH3-only protein family, are critical for binding to Bcl-X{sub L}. Taken altogether, our results suggest a molecular basis for the pro-apoptotic function of nCLU by elucidating the residue specific interactions of the BH3 motif in nCLU with anti-apoptotic Bcl-2 family proteins.

  3. Influence of low atomic number plasma component on the formation of laser-produced plasma jets

    Czech Academy of Sciences Publication Activity Database

    Kasperczuk, A.; Pisarczyk, T.; Badziak, J.; Borodziuk, S.; Chodukowski, T.; Gus’kov, S.Yu.; Demchenko, N. N.; Ullschmied, Jiří; Krouský, Eduard; Mašek, Karel; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Pisarczyk, P.

    2010-01-01

    Roč. 17, č. 11 (2010), s. 114505 ISSN 1070-664X R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z20430508; CEZ:AV0Z10100523 Keywords : Composed laser targets * target material * laser produced-plasma jets * PALS laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.320, year: 2010 http://pop.aip.org/ resource /1/phpaen/v17/i11/p114505_s1

  4. Multi-millijoule, deeply saturated x-ray laser at 21.2 nm for applications in plasma physics

    Czech Academy of Sciences Publication Activity Database

    Rus, Bedřich; Mocek, Tomáš; Präg R., Ansgar; Kozlová, Michaela; Hudeček, Miroslav; Jamelot, G.; Carillon, A.; Ros, D.; Lagron, J.C.; Joyeux, D.; Phalippou, D.

    2002-01-01

    Roč. 44, - (2002), s. B207-B223 ISSN 0741-3335 R&D Projects: GA MŠk LN00A100; GA AV ČR IAA1010014 Institutional research plan: CEZ:AV0Z1010921 Keywords : x-ray lasers * laser plasma * x-ray spectroscopy * x-ray optics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.121, year: 2002

  5. Production of ultrahigh ion current densities at skin-layer subrelativistic laser-plasma interaction

    Czech Academy of Sciences Publication Activity Database

    Badziak, J.; Glowacz, S.; Jablonski, S.; Parys, P.; Wolowski, J.; Hora, H.; Krása, Josef; Láska, Leoš; Rohlena, Karel

    2005-01-01

    Roč. 46, Suppl. 12B (2005), B541-B555 ISSN 0741-3335 Grant - others:International Atomic Energy Agency in Vienna(XE) 11535/RO; State Committee for Scientific Research (KBN)(PL) 1 PO3B 043 26 Institutional research plan: CEZ:AV0Z10100523 Keywords : high-intensity laser * multiply-charged ions * thin foil targets * picosecond laser * iodine laser * proton acceleration * energetic protons * Ag ions * generation * pulses Subject RIV: BH - Optics, Masers, Laser s Impact factor: 2.902, year: 2005

  6. Laser-produced Au nanoparticles as X-ray contrast agents for diagnostic imaging

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Restuccia, N.; Cuzzocrea, S.; Paterniti, I.; Ielo, I.; Pergolizzi, S.; Cutroneo, Mariapompea; Kováčik, L.

    2017-01-01

    Roč. 50, č. 1 (2017), s. 51-60 ISSN 0017-1557 R&D Projects: GA MŠk LM2015056; GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : Au nanoparticles * Laser * X-ray diagnostic s * medical imaging * contrast medium Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Inorganic and nuclear chemistry Impact factor: 1.638, year: 2016

  7. Centrifugal spray generator of singlet oxygen for a chemical oxygen-iodine laser

    Czech Academy of Sciences Publication Activity Database

    Špalek, Otomar; Hrubý, Jan; Čenský, Miroslav; Jirásek, Vít; Kodymová, Jarmila

    2010-01-01

    Roč. 100, č. 4 (2010), s. 793-802 ISSN 0946-2171 Grant - others:European Office of Aerospace R&D(US) FA8655-09-1-3091 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20760514 Keywords : centrifugal generator of singlet oxygen * chemical oxygen-iodine laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.239, year: 2010

  8. Wave mechanics applied to semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bastard, G.

    1990-01-01

    This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

  9. Three-and four-wave model of modulation instability fiber laser

    Czech Academy of Sciences Publication Activity Database

    Honzátko, Pavel; Peterka, Pavel; Kaňka, Jiří

    2002-01-01

    Roč. 4, č. 5 (2002), s. S135-S139 ISSN 1464-4258 R&D Projects: GA ČR GA102/99/0393; GA ČR GA102/98/P235 Institutional research plan: CEZ:AV0Z2067918 Keywords : fibre lasers * optical pulse generation * multiwave mixing Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.274, year: 2002 http://www.ufe.cz/~peterka/opera/Honzatko02_oa2560.pdf

  10. Dissociation of molecular iodine in RF discharge for oxygen-iodine laser

    Czech Academy of Sciences Publication Activity Database

    Jirásek, Vít; Schmiedberger, Josef; Čenský, Miroslav; Kodymová, Jarmila

    2012-01-01

    Roč. 66, č. 4 (2012), 1-6 ISSN 1434-6060 R&D Projects: GA ČR GA202/09/0310 Grant - others:European Office for Aerospace R&D(XE) FA8655-09-1-3092 Institutional research plan: CEZ:AV0Z10100523 Keywords : molecular iodine * RF discharge * dissociation * oxygen-iodine laser * COIL Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.513, year: 2012

  11. Algal Biomass Analysis by Laser-Based Analytical Techniques—A Review

    Czech Academy of Sciences Publication Activity Database

    Pořízka, P.; Procházková, P.; Procházka, D.; Sládková, L.; Novotný, J.; Petrilak, M.; Brada, M.; Samek, Ota; Pilát, Zdeněk; Zemánek, Pavel; Adam, V.; Kizek, R.; Novotný, K.; Kaiser, J.

    2014-01-01

    Roč. 14, 23 SEP (2014), s. 17725-17752 ISSN 1424-8220 R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01; GA ČR GAP205/11/1687 Institutional support: RVO:68081731 Keywords : Laser-Induced Breakdown Spectroscopy * LIBS * Laser-Ablation Inductively Coupled Plasma coupled with Mass Spectroscopy and Optical Emission Spectroscopy * LA-ICP-MS * LA-ICP-OES * ICP-OES * Raman spectroscopy * algae * algal biomass * biofuel * bioremediation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.245, year: 2014

  12. Thin disk amplifier-based 40 mJ, 1 kHz, picosecond laser at 515 nm

    Czech Academy of Sciences Publication Activity Database

    Novák, Jakub; Green, Jonathan T.; Metzger, T.; Mazanec, Tomáš; Himmel, Bedřich; Horáček, Martin; Hubka, Zbyněk; Boge, Robert; Antipenkov, Roman; Batysta, František; Naylon, Jack A.; Bakule, Pavel; Rus, Bedřich

    2016-01-01

    Roč. 24, č. 6 (2016), s. 5728-5733 ISSN 1094-4087 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE.2.3.20.0091 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OP VK 1 Laser Sys(XE) CZ.1.07/2.3.00/20.0091 Institutional support: RVO:68378271 Keywords : laser amplifiers * laser s * pulsed * laser s * diode -pumped * laser s * frequency doubled * ultrafast laser s Subject RIV: BH - Optics, Masers, Laser s Impact factor: 3.307, year: 2016

  13. An Energy Dense-AI-NaBH4-PEMFC Based Power Generator for Unmanned Undersea Vehicles

    Science.gov (United States)

    2016-03-01

    From- To) 03/01/2016 Final 01/28/2013-12/31/2015 4. TITLE AND SUBTITLE Sa. CONTRACT NUMBER An Energy-Dense AI-NaBH4- PEMFC Based Power Generator for...combination of polymer electrolyte membrane fuel cell ( PEMFC ) with a compact hydrogen generator util izing AI-NaBH4 composite fuel. The conditions...ANSI Std. Z39.18 FLORIDA SOLAR ENERGY CENTER. Crl’nrmg EnPrgy lnrll’pendrnr£’ An Energy-Dense Al-NaBH4- PEMFC Based Power Generator for Unmanned

  14. Enhanced Hydrogen Storage Properties and Reversibility of LiBH4 Confined in Two-Dimensional Ti3C2.

    Science.gov (United States)

    Zang, Lei; Sun, Weiyi; Liu, Song; Huang, Yike; Yuan, Huatang; Tao, Zhanliang; Wang, Yijing

    2018-05-30

    LiBH 4 is of particular interest as one of the most promising materials for solid-state hydrogen storage. Herein, LiBH 4 is confined into a novel two-dimensional layered Ti 3 C 2 MXene through a facile impregnation method for the first time to improve its hydrogen storage performance. The initial desorption temperature of LiBH 4 is significantly reduced, and the de-/rehydrogenation kinetics are remarkably enhanced. It is found that the initial desorption temperature of LiBH 4 @2Ti 3 C 2 hybrid decreases to 172.6 °C and releases 9.6 wt % hydrogen at 380 °C within 1 h, whereas pristine LiBH 4 only releases 3.2 wt % hydrogen under identical conditions. More importantly, the dehydrogenated products can partially rehydrogenate at 300 °C and under 95 bar H 2 . The nanoconfined effect caused by unique layered structure of Ti 3 C 2 can hinder the particles growth and agglomeration of LiBH 4 . Meanwhile, Ti 3 C 2 could possess superior effect to destabilize LiBH 4 . The synergetic effect of destabilization and nanoconfinement contributes to the remarkably lowered desorption temperature and improved de-/rehydrogenation kinetics.

  15. Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Li Binghui [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024 (China); Wu Chunxia [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Lu Youming [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Shen Dezhen [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2006-07-15

    MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported, which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K.

  16. Autocorrelation analysis of plasma plume light emissions in deep penetration laser welding of steel

    Czech Academy of Sciences Publication Activity Database

    Mrňa, Libor; Šarbort, Martin; Řeřucha, Šimon; Jedlička, Petr

    2017-01-01

    Roč. 29, č. 1 (2017), s. 1-10, č. článku 012009. ISSN 1042-346X R&D Projects: GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : laser welding * plasma plume * light emissions * autocorrelation analysis * weld depth Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.492, year: 2016

  17. Investigation of the role of NaBH4 in the chemical synthesis of gold nanorods

    International Nuclear Information System (INIS)

    Samal, Akshaya K.; Sreeprasad, Theruvakkattil S.; Pradeep, Thalappil

    2010-01-01

    An improvement in the previously reported seed-mediated chemical synthesis of gold nanorods (GNRs) is reported. Monodisperse GNRs have been synthesized in a one-step protocol. The addition of controlled quantity of sodium borohydride (NaBH 4 ) directly into the growth solution produced uniform GNRs, formed by in situ nucleation and growth. In order to arrive at the conclusion, we studied the formation of GNRs with various seeds, of metals of widely differing crystal structures, and there were no variations in the properties of the GNRs formed. The role of NaBH 4 in the growth of GNR, which has not been covered in previous reports, is discussed in detail. The dependence of longitudinal plasmon peak on the concentration of NaBH 4 is compared with the dependence of residual concentration of NaBH 4 in the seed solution, which is added to the growth solution in seed-mediated synthesis. The study shows that NaBH 4 plays an important role in the formation of GNRs. This proposed protocol offers a number of advantages: one-step preparation of GNRs, significant reduction in the preparation time to 10 min, high monodispersity of GNRs, and tailorability of the aspect ratio depending on NaBH 4 concentration. It is suggested that NaBH 4 added to the growth solution leads to in situ formation of the seed particles of the size of 3-5 nm which enables the growth of GNRs. The growth of GNRs suggested here is likely to have an impact on the preparation of other anisotropic structures. Our single-pot methodology makes the procedure directly adaptable for commercial-scale production of GNRs and for their synthesis even in undergraduate laboratories.

  18. Demonstration of a Ni-like Kr optical-field-ionization collisional soft x-ray laser at 32.8 nm

    Czech Academy of Sciences Publication Activity Database

    Sebban, S.; Mocek, Tomáš; Ros, D.; Upcraft, L.; Balcou, P.; Haroutunian, R.; Grillon, G.; Rus, Bedřich; Klisnick, A.; Carillon, A.; Jamelot, G.; Valentin, C.; Rouseau, J. P.; Notebaert, L.; Pittman, M.; Hulin, D.

    2002-01-01

    Roč. 89, č. 25 (2002), s. 253901-1 - 253901-4 ISSN 0031-9007 R&D Projects: GA MŠk LN00A100 Institutional research plan: CEZ:AV0Z1010921 Keywords : x-ray lasers * laser plasma * x-ray spectroscopy * x-ray optics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 7.323, year: 2002

  19. Density functional theory study of neutral and singly-charged (NaBH{sub 4}){sub n} (n = 1–6) nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yongpeng [State Key Laboratory of Organic–Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Wu, Xiangming [Ping Xiang Sports School, Jiangxi 337000 (China); Liu, Chuan [State Key Laboratory of Organic–Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China); Huang, Shiping, E-mail: huangsp@mail.buct.edu.cn [State Key Laboratory of Organic–Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029 (China)

    2014-10-31

    Highlights: • Structures of (NaBH{sub 4}){sub n} (n = 1–6) clusters are optimized by DFT calculation. • The Kubas interaction is observed in each cationic cluster. • Hydrogen molecule interacts with attached boron atom by Kubas interaction. • Cationic NaBH{sub 4} nanoclusters exhibit more easily H{sub 2} desorption. - Abstract: We report the global minimum structures of (NaBH{sub 4}){sub n} (n = 1–6) clusters by combining the particle swarm optimization algorithm with density functional theory. A newly formed hydrogen molecule is observed in each cationic structure, and the H{sub 2} interacts with adjacent boron atom by Kubas interaction. The results of localized orbital locator and natural bond orbital analysis reveal that the hydrogen molecule interacts with attached boron atom by the σ-bond and σ{sup ∗}-antibond of H{sub 2} in [NaBH{sub 4}]{sub n}{sup +} (n = 1, 2, 3 and 5), and the σ{sup ∗}-antibond dominates this interaction in [NaBH{sub 4}]{sub 4}{sup +} and [NaBH{sub 4}]{sub 6}{sup +}. The desorption energy of the hydrogen molecule is relatively small for [NaBH{sub 4}]{sup +} (1.05 eV), [NaBH{sub 4}]{sub 2}{sup +} (0.99 eV) and [NaBH{sub 4}]{sub 3}{sup +} (0.97 eV). It is also found that the negative desorption energy of the [NaBH{sub 4}]{sub 4}{sup +} (−0.26 eV), [NaBH{sub 4}]{sub 5}{sup +} (−0.26 eV) and [NaBH{sub 4}]{sub 6}{sup +} (−0.54 eV) shows that the hydrogen molecule can be released easily.

  20. All-Solid-State Lithium-Sulfur Battery based on a nanoconfined LiBH 4 Electrolyte

    NARCIS (Netherlands)

    Das, Supti; Ngene, Peter; Norby, Poul; Vegge, Tejs; de Jongh, P.E.; Blanchard, Didier

    2016-01-01

    In this work we characterize all-solid-state lithium-sulfur batteries based on nano-confined LiBH4in mesoporous silica as solid electrolytes. The nano-confined LiBH4has fast ionic lithium conductivity at room temperature, 0.1 mScm-1, negligible electronic conductivity and its cationic transport

  1. Photoelectrochemical-type sunlight photodetector based on MoS2/graphene heterostructure

    International Nuclear Information System (INIS)

    Huang, Zongyu; Han, Weijia; Chander, D Sathish; Qi, Xiang; Zhang, Han; Tang, Hongli; Ren, Long

    2015-01-01

    We have fabricated a novel sunlight photo-detector based on a MoS 2 /graphene heterostructure. The MoS 2 /graphene heterostructure was prepared by a facile hydrothermal method along with a subsequent annealing process followed by a substrate-induced high selective nucleation and growth mechanism. The microstructures and morphologies of the two-dimensional MoS 2 /graphene heterostructure can be experimentally confirmed by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and a UV–vis absorption spectrometer. Photoresponse investigations performed by a photoelectrochemical (PEC) measurement system indicate that the synthesized MoS 2 /graphene heterostructure shows superior photoresponse activities under the illumination of sunlight in contrast with bare MoS 2 and graphene. The improved photoresponsivity can be attributed to the enhanced light absorption, strong light–matter interaction and the extremely efficient charge separation of the heterostructure. The structure and performances of the MoS 2 /graphene heterostructure suggest promising applications in the field of photonics and optoelectronics. (paper)

  2. 40 Gb/s Pulse Generation Using Gain Switching of a Commercially Available Laser Module

    DEFF Research Database (Denmark)

    Nørregaard, Jesper; Hanberg, Jesper; Franck, Thorkild

    1999-01-01

    The laser module contains a single-mode, distributed feedback (DFB) laser diode. The epi-structure of the laser diode is grown by MOCVD as a multiple quantum well heterostructure. The DFB grating is defined by holography, and the laser diode is designed with a co-planar contact metallization...... time division multiplexing to generate a 40 Gb/s RZ pattern.The presentation will report on further details on the laser module including chirp characteristics, and show the eye diagrams taken at 10 and 40 Gb/s....

  3. Heterostructures of transition metal dichalcogenides

    KAUST Repository

    Amin, Bin

    2015-08-24

    The structural, electronic, optical, and photocatalytic properties of out-of-plane and in-plane heterostructures of transition metal dichalcogenides are investigated by (hybrid) first principles calculations. The out-of-plane heterostructures are found to be indirect band gap semiconductors with type-II band alignment. Direct band gaps can be achieved by moderate tensile strain in specific cases. The excitonic peaks show blueshifts as compared to the parent monolayer systems, whereas redshifts occur when the chalcogen atoms are exchanged along the series S-Se-Te. Strong absorption from infrared to visible light as well as excellent photocatalytic properties can be achieved.

  4. Advanced scheme for high-yield laser driven nuclear reactions

    Czech Academy of Sciences Publication Activity Database

    Margarone, Daniele; Picciotto, A.; Velyhan, Andriy; Krása, Josef; Kucharik, M.; Mangione, A.; Szydlowsky, A.; Malinowska, A.; Bertuccio, G.; Shi, Y.; Crivellari, M.; Ullschmied, Jiří; Bellutti, P.; Korn, Georg

    2015-01-01

    Roč. 57, č. 1 (2015), s. 014030 ISSN 0741-3335 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE2.3.20.0279 EU Projects: European Commission(XE) 284464 - LASERLAB-EUROPE Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; LaserZdroj (OP VK 3)(XE) CZ.1.07/2.3.00/20.0279 Institutional research plan: CEZ:AV0Z2043910 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser plasma * nuclear reaction * laser fusion Subject RIV: BL - Plasma and Gas Discharge Physics; BH - Optics, Masers, Lasers (UFP-V) Impact factor: 2.404, year: 2015

  5. Fluence scan: an unexplored property of a laser beam

    Czech Academy of Sciences Publication Activity Database

    Chalupský, Jaromír; Burian, Tomáš; Hájková, Věra; Juha, Libor; Polcar, T.; Gaudin, J.; Nagasono, M.; Sobierajski, R.; Yabashi, M.; Krzywinski, J.

    2013-01-01

    Roč. 21, č. 22 (2013), s. 26363-26375 ISSN 1094-4087 R&D Projects: GA ČR(CZ) GAP108/11/1312; GA ČR GA13-28721S; GA MŠk(CZ) LG13029; GA ČR GAP208/10/2302; GA ČR GAP205/11/0571; GA MŠk EE2.3.30.0057 Grant - others:AVČR(CZ) M100101221; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : free-electron lasers (FELs) * UV * EUV * x-ray lasers * laser beam characterization * F-scan Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.525, year: 2013

  6. Amelioration of behavioral abnormalities in BH(4-deficient mice by dietary supplementation of tyrosine.

    Directory of Open Access Journals (Sweden)

    Sang Su Kwak

    Full Text Available This study reports an amelioration of abnormal motor behaviors in tetrahydrobiopterin (BH4-deficient Spr (-/- mice by the dietary supplementation of tyrosine. Since BH4 is an essential cofactor for the conversion of phenylalanine into tyrosine as well as the synthesis of dopamine neurotransmitter within the central nervous system, the levels of tyrosine and dopamine were severely reduced in brains of BH4-deficient Spr (-/- mice. We found that Spr (-/- mice display variable 'open-field' behaviors, impaired motor functions on the 'rotating rod', and dystonic 'hind-limb clasping'. In this study, we report that these aberrant motor deficits displayed by Spr (-/- mice were ameliorated by the therapeutic tyrosine diet for 10 days. This study also suggests that dopamine deficiency in brains of Spr (-/- mice may not be the biological feature of aberrant motor behaviors associated with BH4 deficiency. Brain levels of dopamine (DA and its metabolites in Spr (-/- mice were not substantially increased by the dietary tyrosine therapy. However, we found that mTORC1 activity severely suppressed in brains of Spr (-/- mice fed a normal diet was restored 10 days after feeding the mice the tyrosine diet. The present study proposes that brain mTORC1 signaling pathway is one of the potential targets in understanding abnormal motor behaviors associated with BH4-deficiency.

  7. Multimillijoule, highly coherent x-ray laser at 21 nm operating in deep saturation through double-pass amplification

    Czech Academy of Sciences Publication Activity Database

    Rus, Bedřich; Mocek, Tomáš; Präg R., Ansgar; Kozlová, Michaela; Jamelot, G.; Carillon, A.; Ros, D.; Joyeux, D.; Phalippou, D.

    2002-01-01

    Roč. 66, č. 6 (2002), s. 063806-1 - 063806-11 ISSN 1050-2947 R&D Projects: GA MŠk LN00A100; GA AV ČR IAA1010014 Institutional research plan: CEZ:AV0Z1010921 Keywords : x-ray lasers * laser plasma * x-ray spectroscopy x-ray optics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.986, year: 2002

  8. Engineering charge transport by heterostructuring solution-processed semiconductors

    Science.gov (United States)

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  9. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    Science.gov (United States)

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices.

  10. Nanoscale heterostructures with molecular-scale single-crystal metal wires.

    Science.gov (United States)

    Kundu, Paromita; Halder, Aditi; Viswanath, B; Kundu, Dipan; Ramanath, Ganpati; Ravishankar, N

    2010-01-13

    Creating nanoscale heterostructures with molecular-scale (synthesis of nanoscale heterostructures with single-crystal molecular-scale Au nanowires attached to different nanostructure substrates. Our method involves the formation of Au nanoparticle seeds by the reduction of rocksalt AuCl nanocubes heterogeneously nucleated on the substrates and subsequent nanowire growth by oriented attachment of Au nanoparticles from the solution phase. Nanoscale heterostructures fabricated by such site-specific nucleation and growth are attractive for many applications including nanoelectronic device wiring, catalysis, and sensing.

  11. Review of laser ion sources developments in Prague and production of q over 50+ ions at Prague Asterix laser System (invited)

    Czech Academy of Sciences Publication Activity Database

    Láska, Leoš; Jungwirth, Karel; Králiková, Božena; Krása, Josef; Krouský, Eduard; Mašek, Karel; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Ullschmied, Jiří; Badziak, J.; Parys, P.; Ryc, L.; Szydlowski, A.; Wolowski, J.; Woryna, E.; Ciavola, G.; Gammino, S.; Torrisi, L.; Boody, F. P.

    2004-01-01

    Roč. 75, č. 5 (2004), s. 1546-1550 ISSN 0034-6748. [International Conference on Ion Sources, ICIS 03 /10./. Dubna, 07.09.2003-14.09.2003] R&D Projects: GA AV ČR IAA1010105; GA MŠk LN00A100 Grant - others:HPRI-CT(XE) 1999-00053 Institutional research plan: CEZ:AV0Z1010921 Keywords : PALS * highly charged ions * laser interaction with self-created plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.226, year: 2004

  12. Resonant Photonic States in Coupled Heterostructure Photonic Crystal Waveguides

    Directory of Open Access Journals (Sweden)

    Sabarinathan J

    2010-01-01

    Full Text Available Abstract In this paper, we study the photonic resonance states and transmission spectra of coupled waveguides made from heterostructure photonic crystals. We consider photonic crystal waveguides made from three photonic crystals A, B and C, where the waveguide heterostructure is denoted as B/A/C/A/B. Due to the band structure engineering, light is confined within crystal A, which thus act as waveguides. Here, photonic crystal C is taken as a nonlinear photonic crystal, which has a band gap that may be modified by applying a pump laser. We have found that the number of bound states within the waveguides depends on the width and well depth of photonic crystal A. It has also been found that when both waveguides are far away from each other, the energies of bound photons in each of the waveguides are degenerate. However, when they are brought close to each other, the degeneracy of the bound states is removed due to the coupling between them, which causes these states to split into pairs. We have also investigated the effect of the pump field on photonic crystal C. We have shown that by applying a pump field, the system may be switched between a double waveguide to a single waveguide, which effectively turns on or off the coupling between degenerate states. This reveals interesting results that can be applied to develop new types of nanophotonic devices such as nano-switches and nano-transistors.

  13. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  14. Ionic conductivity in oxide heterostructures: the role of interfaces

    Directory of Open Access Journals (Sweden)

    Emiliana Fabbri, Daniele Pergolesi and Enrico Traversa

    2010-01-01

    Full Text Available Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these heterostructures and their applications. Recent results revealed that heterophase interfaces have faster ionic conduction pathways than the bulk or homophase interfaces. This finding can open attractive opportunities in the field of micro-ionic devices. The influence of the interfaces on the conduction properties of heterostructures is becoming increasingly important with the miniaturization of solid-state devices, which leads to an enhanced interface density at the expense of the bulk. This review aims to describe the main evidence of interfacial phenomena in ion-conducting film heterostructures, highlighting the fundamental and technological relevance and offering guidelines to understanding the interface conduction mechanisms in these structures.

  15. Fast ion generation by a picosecond high-power laser

    Czech Academy of Sciences Publication Activity Database

    Badziak, J.; Parys, P.; Wolowski, J.; Hora, H.; Krása, Josef; Láska, Leoš; Rohlena, Karel

    2005-01-01

    Roč. 35, č. 1 (2005), s. 5-22 ISSN 0078-5466 R&D Projects: GA MŠk(CZ) ME 238 Grant - others:International Atomic Energy in Vienna(XE) 11535/RO; State Commitee for Scientific Research (KBN)(PL) 1 PO3B 082 19 and 1 PO3B 043 26 Institutional research plan: CEZ:AV0Z10100523 Keywords : fast ion * plasma * picosecond laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.459, year: 2005

  16. Filamented plasmas in laser ablation of solids

    Czech Academy of Sciences Publication Activity Database

    Davies, J.R.; Fajardo, M.; Kozlová, Michaela; Mocek, Tomáš; Polan, Jiří; Rus, Bedřich

    2009-01-01

    Roč. 51, č. 3 (2009), 035013/1-035013/12 ISSN 0741-3335 EU Projects: European Commission(XE) 12843 - TUIXS Grant - others:FCT(PT) POCI/FIS/59563/2004 Institutional research plan: CEZ:AV0Z10100523 Keywords : magneto-hydrodynamic modelling * perturbation * filaments * x-ray * plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.409, year: 2009

  17. High power laser interaction with single and double layer targets

    Czech Academy of Sciences Publication Activity Database

    Borodziuk, S.; Demchenko, N. N.; Gus'kov, S. Yu.; Jungwirth, Karel; Kálal, M.; Kasperczuk, A.; Kondrashov, V. N.; Králiková, Božena; Krouský, Eduard; Limpouch, Jiří; Mašek, Karel; Pisarczyk, P.; Pisarczyk, T.; Pfeifer, Miroslav; Rohlena, Karel; Rozanov, V. B.; Skála, Jiří; Ullschmied, Jiří

    2005-01-01

    Roč. 35, č. 2 (2005), s. 241-262 ISSN 0078-5466 R&D Projects: GA MŠk(CZ) LN00A100; GA AV ČR(CZ) KSK2043105 Grant - others:EU(XE) HPRI-CT-1999-00053; RFBR(RU) 02-02-16966; IAEA(XE) 11655/RBF; INTAS(XX) 01-0572 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser produced plasma * three-frame interferometry * macroparticle * single and double targets * crater * shock wave * laser energy absorption Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.459, year: 2005

  18. Cryogenic Yb:YGAG ceramic laser pumped at 940 nm and zero-phonon-line: a comparative study

    Czech Academy of Sciences Publication Activity Database

    Jambunathan, Venkatesan; Navrátil, Petr; Miura, Taisuke; Yue, Fangxin; Endo, Akira; Lucianetti, Antonio; Mocek, Tomáš

    2017-01-01

    Roč. 7, č. 2 (2017), s. 477-483 ISSN 2159-3930 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086; GA ČR GA14-01660S Institutional support: RVO:68378271 Keywords : solid-state lasers * high average * Yb-YAG * temperatures Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 2.591, year: 2016

  19. Y(BH4)3--an old-new ternary hydrogen store aka learning from a multitude of failures.

    Science.gov (United States)

    Jaroń, Tomasz; Grochala, Wojciech

    2010-01-07

    Fourteen different synthetic approaches towards pure solvent-free Y(BH(4))(3) have been tested, thirteen of which have failed. Attempted reactions of YCl(3) or Y(OC(4)H(9))(3) with LiBH(4) in THF, those of YCl(3) with (C(4)H(9))(4)N(+) BH(4)(-), as well as between YH(x approximately 3) and R(4)NBH(3) (R = CH(3), C(2)H(5)) in the presence or absence of a solvent (n-hexane or CH(2)Cl(2)) did not lead to the expected product. The mechanochemical solid/solid reactions (MBH(4) + 3 YX(3)--> Y(BH(4))(3) + 3 LiCl, where M = Li, Na; X = F, Cl) have succeeded only for the LiBH(4) and YCl(3) reagents, but the separation of the crystalline reaction products (Y(BH(4))(3) in its Pa3 phase and LiCl) by dissolution or flotation in various solvents has not been successful. The thermal decomposition process of Y(BH(4))(3) in a mixture with LiCl has been investigated with thermogravimetric (TGA) and calorimetric analysis (DSC) combined with spectroscopic evolved gas analysis (EGA). Three major endothermic steps could be distinguished in the DSC profile at ca. 232, 282, 475 degrees C (heating rate 10 K min(-1)) corresponding to a phase transition and two steps of thermal decomposition. Solid decomposition products are amorphous except for the new cubic polymorph of Y(BH(4))(3) overlooked in previous work. The high-temperature phase forms at the onset of thermal decomposition and it may be prepared by heating of the low-temperature phase up to a narrow temperature range (194-210 degrees C) followed by rapid quenching. Y(BH(4))(3) constitutes a novel highly efficient hydrogen storage material (theor. 9.0 wt% H) but, unfortunately, the evolved H(2) is contaminated by toxic boron hydrides and products of their pyrolysis.

  20. Alkaline sodium borohydride gel as a hydrogen source for PEMFC or an energy carrier for NaBH 4-air battery

    Science.gov (United States)

    Liu, B. H.; Li, Z. P.; Chen, L. L.

    In this preliminary study, we tried to use sodium polyacrylate as the super absorbent polymer to form alkaline NaBH 4 gel and explored its possibilities for borohydride hydrolysis and borohydride electro-oxidation. It was found that the absorption capacity of sodium polyacrylate decreased with increasing NaBH 4 concentration. The formed gel was rather stable in the sealed vessel but tended to slowly decompose in open air. Hydrogen generation from the gel was carried out using CoCl 2 catalyst precursor solutions. Hydrogen generation rate from the alkaline NaBH 4 gel was found to be higher and impurities in hydrogen were less than that from the alkaline NaBH 4 solution. The NaBH 4 gel also successfully powered a NaBH 4-air battery.

  1. Cycloheximide Can Induce Bax/Bak Dependent Myeloid Cell Death Independently of Multiple BH3-Only Proteins.

    Directory of Open Access Journals (Sweden)

    Katharine J Goodall

    Full Text Available Apoptosis mediated by Bax or Bak is usually thought to be triggered by BH3-only members of the Bcl-2 protein family. BH3-only proteins can directly bind to and activate Bax or Bak, or indirectly activate them by binding to anti-apoptotic Bcl-2 family members, thereby relieving their inhibition of Bax and Bak. Here we describe a third way of activation of Bax/Bak dependent apoptosis that does not require triggering by multiple BH3-only proteins. In factor dependent myeloid (FDM cell lines, cycloheximide induced apoptosis by a Bax/Bak dependent mechanism, because Bax-/-Bak-/- lines were profoundly resistant, whereas FDM lines lacking one or more genes for BH3-only proteins remained highly sensitive. Addition of cycloheximide led to the rapid loss of Mcl-1 but did not affect the expression of other Bcl-2 family proteins. In support of these findings, similar results were observed by treating FDM cells with the CDK inhibitor, roscovitine. Roscovitine reduced Mcl-1 abundance and caused Bax/Bak dependent cell death, yet FDM lines lacking one or more genes for BH3-only proteins remained highly sensitive. Therefore Bax/Bak dependent apoptosis can be regulated by the abundance of anti-apoptotic Bcl-2 family members such as Mcl-1, independently of several known BH3-only proteins.

  2. Generation of atomic iodine via fluorine for chemical oxygen-iodine laser

    Czech Academy of Sciences Publication Activity Database

    Jirásek, Vít; Špalek, Otomar; Čenský, Miroslav; Picková, Irena; Kodymová, Jarmila; Jakubec, Ivo

    2007-01-01

    Roč. 334, - (2007), s. 167-174 ISSN 0301-0104 R&D Projects: GA ČR GA202/05/0359 Grant - others:USAF European Office for Research and Development(XE) FA 8655-05-M-4027 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z40320502 Keywords : atomic iodine * atomic fluorine * chemical oxygen-iodine laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.805, year: 2007

  3. Spot size characterization of focused non-Gaussian X-ray laser beams

    Czech Academy of Sciences Publication Activity Database

    Chalupský, Jaromír; Krzywinski, J.; Juha, Libor; Hájková, Věra; Cihelka, Jaroslav; Burian, Tomáš; Vyšín, Luděk; Gaudin, J.; Gleeson, A.; Jurek, M.; Khorsand, A.R.; Klinger, D.; Wabnitz, H.; Sobierajski, R.; Störmer, M.; Tiedtke, K.; Toleikis, S.

    2010-01-01

    Roč. 18, č. 26 (2010), s. 27836-27845 ISSN 1094-4087 R&D Projects: GA AV ČR KAN300100702; GA MŠk LC510; GA MŠk(CZ) LC528; GA ČR GAP208/10/2302; GA MŠk LA08024; GA AV ČR IAAX00100903; GA MŠk(CZ) ME10046 Institutional research plan: CEZ:AV0Z10100523 Keywords : X-ray laser * free-electron laser * beam characterization * ablation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.749, year: 2010

  4. Single-shot soft x-ray laser-induced ablative microstructuring of organic polymer with demagnifying projection

    Czech Academy of Sciences Publication Activity Database

    Mocek, Tomáš; Rus, Bedřich; Kozlová, Michaela; Polan, Jiří; Homer, Pavel; Juha, Libor; Hájková, Věra; Chalupský, Jaromír

    2008-01-01

    Roč. 33, č. 10 (2008), s. 1087-1089 ISSN 0146-9592 R&D Projects: GA AV ČR KAN300100702; GA ČR GA202/05/2316; GA MŠk LC510; GA MŠk(CZ) LC528; GA MŠk LA08024 Institutional research plan: CEZ:AV0Z10100523 Keywords : x-ray lasers * laser ablation * microstructuring Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.772, year: 2008

  5. Dehydriding Process and Hydrogen–Deuterium Exchange of LiBH4–Mg2FeD6 Composites

    Directory of Open Access Journals (Sweden)

    Guanqiao Li

    2015-06-01

    Full Text Available The dehydriding process and hydrogen–deuterium exchange (H–D exchange of xLiBH4 + (1 − xMg2FeD6 (x = 0.25, 0.75 composites has been studied in detail. For the composition with x = 0.25, only one overlapping mass peak of all hydrogen and deuterium related species was observed in mass spectrometry. This implied the simultaneous dehydriding of LiBH4 and Mg2FeD6, despite an almost 190 °C difference in the dehydriding temperatures of the respective discrete complex hydrides. In situ infrared spectroscopy measurements indicated that H–D exchange between [BH4]− and [FeD6]4− had occurred during ball-milling and was promoted upon heating. The extent of H–D exchange was estimated from the areas of the relevant mass signals: immediately prior to the dehydriding, more than two H atoms in [BH4]− was replaced by D atoms. For x = 0.75, H–D exchange also occurred and about one to two H atoms in [BH4]− was replaced by D atoms immediately before the dehydriding. In contrast to the situation for x = 0.25, firstly LiBH4 and Mg2FeD6 dehydrided simultaneously with a special molar ratio = 1:1 at x = 0.75, and then the remaining LiBH4 reacted with the Mg and Fe derived from the dehydriding of Mg2FeD6.

  6. Influence of temperature on Pr:YAlO.sub.3./sub. laser operation in the orange and near-infrared spectral range

    Czech Academy of Sciences Publication Activity Database

    Fibrich, Martin; Šulc, J.; Jelínková, H.

    2014-01-01

    Roč. 11, č. 10 (2014), s. 105801 ISSN 1612-2011 Institutional support: RVO:68378271 Keywords : Pr:YAlO 3 * diode pumping * InGaN laser diode * cryogenic temperature Subject RIV: BH - Optics, Masers, Laser s Impact factor: 2.458, year: 2014

  7. Laser created thin films sensors based on Sn- and indium compounds

    Czech Academy of Sciences Publication Activity Database

    Myslík, V.; Vysloužil, F.; Vrňata, M.; Fryček, R.; Jelínek, Miroslav; Lančok, Ján

    2002-01-01

    Roč. 12, č. 2 (2002), s. 329-333 ISSN 1054-660X Institutional research plan: CEZ:AV0Z1010921 Keywords : PLD * Sn-based thin films * In-based thin films Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.798, year: 2002

  8. Two-dimensional heterostructures for energy storage

    Energy Technology Data Exchange (ETDEWEB)

    Gogotsi, Yury G. [Drexel Univ., Philadelphia, PA (United States); Pomerantseva, Ekaterina [Drexel Univ., Philadelphia, PA (United States)

    2017-06-12

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. As a result, we also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

  9. Optical phase locking of two infrared continuous wave lasers separated by 100 THz

    Czech Academy of Sciences Publication Activity Database

    Chiodo, N.; Du-Burck, F.; Hrabina, Jan; Lours, M.; Chea, E.; Acef, O.

    2014-01-01

    Roč. 39, č. 10 (2014), s. 2936-2939 ISSN 0146-9592 R&D Projects: GA ČR GPP102/11/P820; GA MŠk ED0017/01/01; GA MŠk EE2.4.31.0016; GA MŠk(CZ) LO1212; GA MŠk(CZ) 7AMB14FR040 Institutional support: RVO:68081731 Keywords : Continuous wave lasers * Frequency allocation * Harmonic generation * Laser optics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.292, year: 2014

  10. Development of Al2O3 carrier-Ru composite catalyst for hydrogen generation from alkaline NaBH4 hydrolysis

    International Nuclear Information System (INIS)

    Huang, Yao-Hui; Su, Chia-Chi; Wang, Shu-Ling; Lu, Ming-Chun

    2012-01-01

    A recyclable and reusable Ru/Al 2 O 3 catalyst is prepared for hydrogen generation from the hydrolysis process of alkaline sodium borohydride (NaBH 4 ) solution. The hydrogen generation rate by the hydrolysis and methanolysis of alkaline NaBH 4 was explored as a function of NaOH concentration. Meantime, the byproducts derived from the spent alkaline NaBH 4 solution were characterized by X-ray diffraction (XRD), scanning electro microscope/energy dispersive spectrometer (SEM/EDS) and NMR (Nuclear Magnetic Resonance). The effect of NaOH concentration on the hydrogen generation from the hydrolysis of NaBH 4 significantly depends on the type of catalysts. With increasing NaOH concentration, the hydrogen generation rates decrease when using ruthenium (Ru) composite as a catalyst. The hydrogen generation rate of the methanolysis of NaBH 4 is significantly inhibited in the presence of NaOH as compared with the hydrolysis of NaBH 4 . The durability test of the Ru/Al 2 O 3 catalyst shows that the hydrogen generation rate decreases with recycling and reuse. The XRD and NMR analysis results show that the borate hydrate (NaBO 2 H 2 O) was derived from the hydrolysis of 20 wt% and 30 wt% NaBH 4 . -- Highlights: ► A recyclable Ru/Al 2 O 3 catalyst was synthesized for hydrogen generation. ► Ru/Al 2 O 3 significantly promotes the hydrogen generation rate from alkaline NaBH 4 solution. ► The prepared Ru/Al 2 O 3 catalyst can easily collect from the spent alkaline NaBH 4 solution.

  11. Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm

    Science.gov (United States)

    Kolodeznyi, E. S.; Novikov, I. I.; Babichev, A. V.; Kurochkin, A. S.; Gladyshev, A. G.; Karachinsky, L. Ya; Gadzhiev, I. M.; Buyalo, M. S.; Usikova, A. A.; Ilynskaya, N. D.; Bougrov, V. E.; Egorov, A. Yu

    2017-11-01

    We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.

  12. XRF 100316D/SN 2010bh and the nature of gamma-ray burst supernovae

    NARCIS (Netherlands)

    Cano, Z.; Bersier, D.; Guidorzi, C.; Kobayashi, S.; Levan, A.J.; Tanvir, N.R.; Wiersema, K.; D'Avanzo, P.; Fruchter, A.S.; Garnavich, P.; Gomboc, A.; Gorosabel, J.; Kasen, D.; Kopač, D.; Margutti, R.; Mazzali, P.A.; Melandri, A.; Mundell, C.G.; Nugent, P.E.; Pian, E.; Smith, R.J.; Steele, I.; Wijers, R.A.M.J.; Woosley, S.E.

    2011-01-01

    We present ground-based and Hubble Space Telescope optical and infrared observations of Swift XRF 100316D/SN 2010bh. It is seen that the optical light curves of SN 2010bh evolve at a faster rate than the archetype gamma-ray burst supernova (GRB-SN) 1998bw, but at a similar rate to SN 2006aj, an SN

  13. Mechanical properties and failure behaviour of graphene/silicene/graphene heterostructures

    International Nuclear Information System (INIS)

    Chung, Jing-Yang; Sorkin, Viacheslav; Pei, Qing-Xiang; Zhang, Yong-Wei; Chiu, Cheng-Hsin

    2017-01-01

    Van der Waals heterostructures based on graphene and other 2D materials have attracted great attention recently. In this study, the mechanical properties and failure behaviour of a graphene/silicene/graphene heterostructure are investigated using molecular dynamics simulations. We find that by sandwiching silicene in-between two graphene layers, both ultimate tensile strength and Young’s modulus of the heterostructure increase approximately by a factor of 10 compared with those of stand-alone silicene. By examining the fracture process of the heterostructure, we find that graphene and silicene exhibit quite different fracture behaviour. While graphene undergoes cleavage through its zigzag edge only, silicene can cleave through both its zigzag and armchair edges. In addition, we study the effects of temperature and strain rate on the mechanical properties of the heterostructure and find that an increase in temperature results in a decrease in its mechanical strength and stiffness, while an increase in strain rate leads to an increase in its mechanical strength without significant changes in its stiffness. We further explore the failure mechanism and show that the temperature and strain-rate dependent fracture stress can be accurately described by the kinetic theory of fracture. Our findings provide a deep insight into the mechanical properties and failure mechanism of graphene/silicene heterostructures. (paper)

  14. Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

    DEFF Research Database (Denmark)

    Pryds, Nini

    2015-01-01

    The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first...... unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our...

  15. Low energy proton beams from laser-generated plasma

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Giuffrida, L.; Margarone, Daniele; Caridi, F.; Di Bartolo, F.

    2011-01-01

    Roč. 653, č. 1 (2011), s. 140-144 ISSN 0168-9002 R&D Projects: GA ČR(CZ) GAP205/11/1165; GA MŠk(CZ) 7E09092; GA MŠk ED1.1.00/02.0061 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser-generated plasma * proton acceleration * hydrogenated targets * proton yield * doped polymers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.207, year: 2011

  16. Highly charged ions generated with intense laser beams

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Jungwirth, Karel; Králiková, Božena; Láska, Leoš; Pfeifer, Miroslav; Rohlena, Karel; Skála, Jiří; Ullschmied, Jiří; Hnatowicz, Vladimír; Peřina, Vratislav; Badziak, J.; Parys, P.; Wolowski, J.; Woryna, E.; Szydlowski, A.

    2003-01-01

    Roč. 205, - (2003), s. 355-359 ISSN 0168-583X. [International Symposium on Swift Heavy Ions in Matter /5./. Taormina-Giardini Naxos, 22.05.2002-25.05.2002] R&D Projects: GA MŠk LN00A100 Grant - others:HPRI(XE) CT-1999-00053; IAEA(XE) 11535/RO Institutional research plan: CEZ:AV0Z2043910; CEZ:AV0Z1010921 Keywords : laser-produced plasma * highly charged ions * ion implantation * windowless electron multiplier Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.041, year: 2003

  17. Biomedical properties of laser prepared silver-doped hydroxyapatite

    Czech Academy of Sciences Publication Activity Database

    Jelínek, Miroslav; Weiserová, Marie; Kocourek, Tomáš; Zezulová, Markéta; Strnad, D.

    2011-01-01

    Roč. 21, č. 7 (2011), 1265-1269 ISSN 1054-660X R&D Projects: GA ČR GA204/07/0325 Institutional research plan: CEZ:AV0Z10100522; CEZ:AV0Z50200510 Keywords : silver -doped hydroxyapatite * PLD * layers * antibacterial properties Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.605, year: 2011

  18. How to optimize ultrashort pulse laser interaction with glass surfaces in cutting regimes?

    Czech Academy of Sciences Publication Activity Database

    Bulgakova, Nadezhda M.; Zhukov, V.P.; Collins, A.R.; Rostohar, Danijela; Derrien, Thibault; Mocek, Tomáš

    2015-01-01

    Roč. 336, May (2015), s. 364-374 ISSN 0169-4332 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : laser material processing * high power lasers * glass cutting * laser-matter interaction * biwave length irradiation * ambient gas ionization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.150, year: 2015

  19. The First Simultaneous X-Ray/Radio Detection of the First Be/BH System MWC 656

    Energy Technology Data Exchange (ETDEWEB)

    Ribó, M.; Paredes, J. M.; Marcote, B.; Moldón, J.; Paredes-Fortuny, X. [Departament de Física Quàntica i Astrofísica, Institut de Ciències del Cosmos (ICCUB), Universitat de Barcelona, IEEC-UB, Martí i Franquès 1, E08028 Barcelona (Spain); Munar-Adrover, P. [INAF/IAPS-Roma, I-00133 Roma (Italy); Iwasawa, K. [ICREA, Institut de Ciències del Cosmos (ICCUB), Universitat de Barcelona, IEEC-UB, Martí i Franquès 1, E-08028 Barcelona (Spain); Casares, J. [Instituto de Astrofísica de Canarias, E-38200 La Laguna, Tenerife (Spain); Migliari, S. [European Space Astronomy Centre, Apartado/P.O. Box 78, Villanueva de la Canada, E-28691 Madrid (Spain)

    2017-02-01

    MWC 656 is the first known Be/black hole (BH) binary system. Be/BH binaries are important in the context of binary system evolution and sources of detectable gravitational waves because they are possible precursors of coalescing neutron star/BH binaries. X-ray observations conducted in 2013 revealed that MWC 656 is a quiescent high-mass X-ray binary (HMXB), opening the possibility to explore X-ray/radio correlations and the accretion/ejection coupling down to low luminosities for BH HMXBs. Here we report on a deep joint Chandra /VLA observation of MWC 656 (and contemporaneous optical data) conducted in 2015 July that has allowed us to unambiguously identify the X-ray counterpart of the source. The X-ray spectrum can be fitted with a power law with Γ ∼ 2, providing a flux of ≃4 × 10{sup −15} erg cm{sup −2} s{sup −1} in the 0.5–8 keV energy range and a luminosity of L {sub X} ≃ 3 × 10{sup 30} erg s{sup −1} at a 2.6 kpc distance. For a 5 M{sub ⊙} BH this translates into ≃5 × 10{sup −9} L {sub Edd}. These results imply that MWC 656 is about 7 times fainter in X-rays than it was two years before and reaches the faintest X-ray luminosities ever detected in stellar-mass BHs. The radio data provide a detection with a peak flux density of 3.5 ± 1.1 μ Jy beam{sup −1}. The obtained X-ray/radio luminosities for this quiescent BH HMXB are fully compatible with those of the X-ray/radio correlations derived from quiescent BH low-mass X-ray binaries. These results show that the accretion/ejection coupling in stellar-mass BHs is independent of the nature of the donor star.

  20. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  1. Interface-engineered oxygen octahedral coupling in manganite heterostructures

    Science.gov (United States)

    Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

    2017-12-01

    Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low

  2. Fusion energy using avalanche increased boron reactions for block-ignition by ultrahigh power picosecond laser pulses

    Czech Academy of Sciences Publication Activity Database

    Hora, H.; Korn, Georg; Giuffrida, Lorenzo; Margarone, Daniele; Picciotto, A.; Krása, Josef; Jungwirth, Karel; Ullschmied, Jiří; Lalousis, P.; Eliezer, S.; Miley, G. H.; Moustaizis, S.; Mourou, G.

    2015-01-01

    Roč. 33, č. 4 (2015), s. 607-619 ISSN 0263-0346 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : fusion energy without radiation problem * boron fusion by lasers * non-linear force-driven block ignition Subject RIV: BL - Plasma and Gas Discharge Physics; BH - Optics, Masers, Lasers (UFP-V) Impact factor: 1.649, year: 2015

  3. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    International Nuclear Information System (INIS)

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-01-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  4. Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

    Energy Technology Data Exchange (ETDEWEB)

    Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S G; Lazarev, V V; Yablonskii, S V; Palto, S P [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

  5. Tunable emergent heterostructures in a prototypical correlated metal

    Science.gov (United States)

    Fobes, D. M.; Zhang, S.; Lin, S.-Z.; Das, Pinaki; Ghimire, N. J.; Bauer, E. D.; Thompson, J. D.; Harriger, L. W.; Ehlers, G.; Podlesnyak, A.; Bewley, R. I.; Sazonov, A.; Hutanu, V.; Ronning, F.; Batista, C. D.; Janoschek, M.

    2018-05-01

    At the interface between two distinct materials, desirable properties, such as superconductivity, can be greatly enhanced1, or entirely new functionalities may emerge2. Similar to in artificially engineered heterostructures, clean functional interfaces alternatively exist in electronically textured bulk materials. Electronic textures emerge spontaneously due to competing atomic-scale interactions3, the control of which would enable a top-down approach for designing tunable intrinsic heterostructures. This is particularly attractive for correlated electron materials, where spontaneous heterostructures strongly affect the interplay between charge and spin degrees of freedom4. Here we report high-resolution neutron spectroscopy on the prototypical strongly correlated metal CeRhIn5, revealing competition between magnetic frustration and easy-axis anisotropy—a well-established mechanism for generating spontaneous superstructures5. Because the observed easy-axis anisotropy is field-induced and anomalously large, it can be controlled efficiently with small magnetic fields. The resulting field-controlled magnetic superstructure is closely tied to the formation of superconducting6 and electronic nematic textures7 in CeRhIn5, suggesting that in situ tunable heterostructures can be realized in correlated electron materials.

  6. First-principles approach for superconducting slabs and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Csire, Gabor [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We present a fully ab-initio method to calculate the transition temperature for superconducting slabs and heterostructures. In the case of thin superconductor layers the electron-phonon interaction may change significantly. Therefore we calculate the layer dependent phonon spectrum to determine the layer dependence of the electron-phonon coupling for such systems. The phonon spectrum is than coupled to the Kohn-Sham-Bogoliubov-de Gennes equation via the McMillan-Hopfield parameter, and it is solved self-consistently. The theory is applied to niobium slabs and niobium-gold heterostructures. Based on these calculations we investigate both the dependence of the superconducting transition temperature on the thickness of superconducting slabs and the inverse proximity effect observed in thin superconducting heterostructures.

  7. Plasma-based X-ray laser at 21 nm for multidisciplinary applications

    Czech Academy of Sciences Publication Activity Database

    Mocek, Tomáš; Rus, Bedřich; Kozlová, Michaela; Polan, Jiří; Homer, Pavel; Jakubczak, Krzysztof; Stupka, Michal; Snopek, David; Nejdl, Jaroslav; Edwards, M.H.; Whittaker, D.S.; Tallents, G. J.; Mistry, P.; Pert, G. J.; Booth, N.; Zhai, Z.; Fajardo, M.; Zeitoun, P.; Chalupský, Jaromír; Hájková, Věra; Juha, Libor

    2009-01-01

    Roč. 54, č. 2 (2009), s. 439-444 ISSN 1434-6060 R&D Projects: GA AV ČR KAN300100702; GA ČR GA202/05/2316; GA MŠk(CZ) LC528; GA ČR GC202/07/J008; GA MŠk(CZ) 7E08094; GA MŠk(CZ) 7E09092 EU Projects: European Commission(XE) 506350 - LASERLAB-EUROPE Institutional research plan: CEZ:AV0Z10100523 Keywords : x-ray laser * laser ablation * microstruturing * dense plasma probing Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.420, year: 2009

  8. Pocta Karlu Pátkovi za první československý laser

    Czech Academy of Sciences Publication Activity Database

    Vyšín, Luděk; Juha, Libor

    2010-01-01

    Roč. 60, č. 4 (2010), 316-318 ISSN 0009-0700 R&D Projects: GA AV ČR KAN300100702; GA MŠk(CZ) 7E08099; GA MŠk LC510; GA MŠk(CZ) LC528; GA ČR GAP208/10/2302; GA MŠk LA08024; GA AV ČR IAAX00100903; GA MŠk(CZ) ME10046 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser history * neodymium laser * Karel Pátek - the physicist * neodymium glass Subject RIV: BH - Optics, Masers, Lasers

  9. Destabilized LiBH4-NaAlH4 Mixtures Doped with Titanium Based Catalysts

    DEFF Research Database (Denmark)

    Shi, Qing; Yu, Xuebin; Feidenhans'l, Robert

    2008-01-01

    We investigate the hydrogen storage properties of the mixed complex hydride LiBH4-NaAlH4 system, both undoped and doped with a TiCl3 additive. The mixed system is found to initiate a transformation to LiBH4-NaAlH4 after ball-milling, and the doped system is found to have a significant lower hydro...

  10. Spectroscopic and laser characterization of Yb.sub.0.15./sub.:(Lu.sub.x./sub.Y.sub.1-x./sub.).sub.3./sub.Al.sub.5./sub.O.sub.12./sub. ceramics with different Lu/Y balance

    Czech Academy of Sciences Publication Activity Database

    Pirri, A.; Toci, G.; Li, J.; Xie, T.; Pan, Y.; Babin, Vladimir; Beitlerová, Alena; Nikl, Martin; Vannini, M.

    2016-01-01

    Roč. 24, č. 16 (2016), s. 17832-17842 ISSN 1094-4087 Institutional support: RVO:68378271 Keywords : lasers and laser optics * rare earth and transition metal solid-state lasers * tunable lasers * laser materials Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.307, year: 2016

  11. Ultrashort pulse laser ablation of dielectrics: thresholds, mechanisms, role of breakdown

    Czech Academy of Sciences Publication Activity Database

    Mirza, M. Inam; Bulgakova, Nadezhda M.; Tomáštík, J.; Michálek, Václav; Haderka, O.; Fekete, Ladislav; Mocek, Tomáš

    2016-01-01

    Roč. 6, Dec (2016), 1-11, č. článku 39133. ISSN 2045-2322 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086; GA MŠk LO1409; GA MŠk LM2015088 Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568 Institutional support: RVO:68378271 Keywords : laser material processing * surfaces * interfaces * thin films Subject RIV: BH - Optics, Masers, Lasers Impact factor: 4.259, year: 2016

  12. High-power extended cavity laser optimized for optical pumping ot Rb

    Czech Academy of Sciences Publication Activity Database

    Buchta, Zdeněk; Číp, Ondřej; Lazar, Josef

    2007-01-01

    Roč. 18, č. 9 (2007), N77-N80 ISSN 0957-0233 R&D Pro jects: GA ČR GA102/04/2109; GA MŠk(CZ) LC06007; GA AV ČR IAA200650504; GA AV ČR IAA1065303 Institutional research plan: CEZ:AV0Z20650511 Keywords : laser diode * emission linewidth * diffraction grating * optical pumping * spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.297, year: 2007

  13. Determination of interfacial states in solid heterostructures using a variable-energy positron beam

    Science.gov (United States)

    Asoka kumar, Palakkal P. V.; Lynn, Kelvin G.

    1993-01-01

    A method and means is provided for characterizing interfacial electron states in solid heterostructures using a variable energy positron beam to probe the solid heterostructure. The method includes the steps of directing a positron beam having a selected energy level at a point on the solid heterostructure so that the positron beam penetrates into the solid heterostructure and causes positrons to collide with the electrons at an interface of the solid heterostructure. The number and energy of gamma rays emitted from the solid heterostructure as a result of the annihilation of positrons with electrons at the interface are detected. The data is quantified as a function of the Doppler broadening of the photopeak about the 511 keV line created by the annihilation of the positrons and electrons at the interface, preferably, as an S-parameter function; and a normalized S-parameter function of the data is obtained. The function of data obtained is compared with a corresponding function of the Doppler broadening of the annihilation photopeak about 511 keV for a positron beam having a second energy level directed at the same material making up a portion of the solid heterostructure. The comparison of these functions facilitates characterization of the interfacial states of electrons in the solid heterostructure at points corresponding to the penetration of positrons having the particular energy levels into the interface of the solid heterostructure. Accordingly, the invention provides a variable-energy non-destructive probe of solid heterostructures, such as SiO.sub.2 /Si, MOS or other semiconductor devices.

  14. 58 Etude du champ lointain de la double hétérostructure laser ...

    African Journals Online (AJOL)

    AKA BOKO

    lointain. Abstract. Study of the far field of the double heterostructure laser. GaInAsSb/GaAlAsSb ... the establishment the conditions for a better coupling of the DH laser with the optical fibres. ..... [4] - H. K. CHOI, G. W. TURNER and S. J. EGLASH, IEEE photonics Technology Letters, Vol. 6 ( 1994) 7. [5] - H. K. CHOI, and S. J. ...

  15. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  16. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Energy Technology Data Exchange (ETDEWEB)

    Dikareva, N. V., E-mail: dnat@ro.ru; Vikhrova, O. V.; Zvonkov, B. N. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Malekhonova, N. V. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Pirogov, A. V.; Pavlov, D. A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation)

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  17. Design of a kJ-class HiLASE laser as a driver for inertial fusion energy

    Czech Academy of Sciences Publication Activity Database

    Lucianetti, Antonio; Sawicka, Magdalena; Slezák, Ondřej; Divoký, Martin; Pilař, Jan; Jambunathan, Venkatesan; Bonora, Stefano; Antipenkov, Roman; Mocek, Tomáš

    2014-01-01

    Roč. 2, e13 (2014), s. 1-10 ISSN 2095-4719 R&D Projects: GA MŠk ED1.1.00/02.0061 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061 Institutional support: RVO:68378271 Keywords : ASE * birefringence * cryogenic cooling * slab lasers * thermooptic effects Subject RIV: BH - Optics, Masers, Lasers

  18. Resistive switching effects in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3/Pt heterostructures prepared by pulse laser deposition method

    International Nuclear Information System (INIS)

    Chen, X.G.; Fu, J.B.; Li, L.Z.; Yun, C.; Zhao, H.; Zhang, X.F.; Wang, C.S.; Yang, Y.C.; Yang, J.B.

    2014-01-01

    The heterostructural junctions of CeO 2 /La 0.7 (Sr 0.1 Ca 0.9 ) 0.3 MnO 3 /Pt (CeO 2 /LSCMO/Pt) were prepared using pulse laser deposition technique. Their resistive switching (RS) behavior was investigated. As compared to the metal/manganite/Pt junction, the CeO 2 /LSCMO/Pt device displayed an improved switching characteristic. The RS effects with characteristics of bipolar, threshold, and complementary were realized by adjusting the thicknesses of the CeO 2 layer in the CeO 2 /LSCMO/Pt junctions. Under a higher external bias voltage, the threshold and complementary switching modes of the junctions could turn into bipolar switching mode. The switching behavior shows strong dependence on the O 2 partial pressure during the fabrication, indicating that the amount and behavior of the oxygen at the interface play an important role in the determination of the RS behavior. The observed switching behavior is related to the modification of the accumulation/depletion layers as well as the interfacial potential barrier due to the migration of the oxygen vacancies. - Highlights: • Heterostructure of CeO 2 /LSMO/Pt displayed an improved resistance switching characteristic. • Resistance switching with characteristics of bipolar, threshold and complementary was found. • Threshold and complementary switching mode could turn into bipolar switching mode. • Switching behavior is related to the modification of the accumulation/depletion layers. • Interfacial potential barrier due to the migration of oxygen vacancies was proposed

  19. Third order mode laser diode: design of a twin photon source

    International Nuclear Information System (INIS)

    Ducci, S.; Berger, V.; Rossi, A. de; Ortiz, V.; Calligaro, M.; Vinter, B.; Nagle, J.; Berger, V.

    2004-01-01

    We demonstrate the lasing action on a third order waveguide mode in a laser diode. The AlGaAs heterostructure has been designed to achieve a parametric emission of photons pairs through modal phase matching. This device is very compact and does not generate coupling loss between the laser source and the non-linear waveguide. It is the first step on the way to design a twin photon micro-source. (A.C.)

  20. The Drosophila melanogaster Eip74EF-PA transcription factor directly binds the sciarid BhC4-1 promoter.

    Science.gov (United States)

    Frank, Henrique Oliveira; Sanchez, Danilo Garcia; de Freitas Oliveira, Lucas; Kobarg, Jörg; Monesi, Nadia

    2017-11-01

    The DNA puff BhC4-1 gene of Bradysia hygida (Diptera, Sciaridae) is amplified and expressed in the salivary glands at the end of the last larval instar. Even though there are no BhC4-1 orthologs in Drosophila melanogaster, the mechanisms that regulate BhC4-1 gene expression in B. hygida are for the most part conserved in D. melanogaster. The BhC4-1 promoter contains a 129bp (-186/-58) cis-regulatory module (CRM) that drives developmentally regulated expression in transgenic salivary glands at the onset of metamorphosis. Both in the sciarid and in transgenic D. melanogaster, BhC4-1 gene expression is induced by the increase in ecdysone titers that triggers metamorphosis. Genetic interaction experiments revealed that in the absence of the Eip74EF-PA early gene isoform BhC4-1-lacZ levels of expression in the salivary gland are severely reduced. Here we show that the overexpression of the Eip74EF-PA transcription factor is sufficient to anticipate BhC4-1-lacZ expression in transgenic D. melanogaster. Through yeast one-hybrid assays we confirm that the Eip74EF-PA transcription factor directly binds to the 129 bp sciarid CRM. Together, these results contribute to the characterization of an insect CRM and indicate that the ecdysone gene regulatory network that promotes metamorphosis is conserved between D. melanogaster and the sciarid B. hygida. © 2017 Wiley Periodicals, Inc.

  1. A dental perspective on the taxonomic affinity of the Balanica mandible (BH-1).

    Science.gov (United States)

    Skinner, Matthew M; de Vries, Dorien; Gunz, Philipp; Kupczik, Kornelius; Klassen, R Paul; Hublin, Jean-Jacques; Roksandic, Mirjana

    2016-04-01

    The Middle Pleistocene represents a period of critical importance in human evolution, marked by encephalisation and dental reduction, and increasing diversification of temporally and spatially distributed hominin lineages in Africa, Asia and Europe. New specimens, especially from areas less well represented in the fossil record, can inform the debate on morphological changes to the skeleton and teeth and the phylogenetic course of human evolution during this period. The mandible from the cave of Mala Balanica, Serbia has recently been re-dated to at least 400 ka, and its well-preserved dentition presents an excellent opportunity to characterize molar crown morphology at this time period, and re-examine claims for a lack of Neandertal affinities in the specimen. In this study we employ microtomography to image the internal structure of the mandibular molars (focusing on the morphology of the enamel-dentine junction, or EDJ) of the BH-1 specimen and a comparative sample (n = 141) of Homo erectus sensu lato, Homo neanderthalensis, Pleistocene Homo sapiens, and recent H. sapiens. We quantitatively assess EDJ morphology using 3D geometric morphometrics and examine the expression of discrete dental traits at the dentine surface. We also compare third molar enamel thickness in BH-1 to those of H. neanderthalensis and both Pleistocene and recent H. sapiens, and document previously unreported morphology of the BH-1 premolar and molar roots. Our results highlight the reliability of the EDJ surface for classifying hominin taxa, indicate a primitive dental morphology for BH-1 molars, and confirm a general lack of derived Neandertal features for the Balanica individual. The plesiomorphic character of BH-1 is consistent with several competing models of Middle Pleistocene hominin evolution and provides an important regional and temporal example for reconstructing morphological changes in the mandible and teeth during this time period. Copyright © 2016 Elsevier Ltd. All

  2. Regular 3-D Networks with Clusters for Controlled Energy Transport Studies in Laser Plasma near Critical Density

    Czech Academy of Sciences Publication Activity Database

    Borisenko, N.G.; Akimova, I.V.; Gromov, A. I.; Khalenkov, A.M.; Merkul´ev, A.Y.; Kondrashov, V. N.; Limpouch, J.; Kuba, J.; Krouský, Eduard; Mašek, Karel; Nazarov, W.; Pimenov, V.G.

    2006-01-01

    Roč. 49, č. 4 (2006), s. 676-685 ISSN 1536-1055 R&D Projects: GA MŠk(CZ) LC528; GA MŠk(CZ) 1K05026 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser absorption * energy transfer * foam Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.678, year: 2006

  3. Hot and dense plasma probing by soft X-ray lasers

    Czech Academy of Sciences Publication Activity Database

    Krůs, Miroslav; Kozlová, Michaela; Nejdl, Jaroslav; Rus, B.

    2018-01-01

    Roč. 13, č. 1 (2018), č. článku C01004. ISSN 1748-0221. [International Symposium on Laser-Aided Plasma Diagnostics/18./. Prague, 24.09.2017-28.09.2017] R&D Projects: GA MŠk LM2010014; GA MŠk(CZ) LM2015083 Institutional support: RVO:61389021 Keywords : Plasma diagnostics - interferometry * spectroscopy and imaging * Plasma diagnostics - probes * Plasma generation (laser-produced, RF, x ray-produced) Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: 2.11 Other engineering and technologies Impact factor: 1.220, year: 2016 http://iopscience.iop.org/article/10.1088/1748-0221/13/01/C01004

  4. Dharmawangśa’s heritage On the appreciation of the Old Javanese Mahābhārata

    Directory of Open Access Journals (Sweden)

    Willem van der Molen

    2010-10-01

    Full Text Available As we all know, the Old Javanese Mahābhārata was not created from scratch by a Javanese author but was translated (in some sense from the Sanskrit. The story of Hiḍimbī reveals an interesting difference between the Old Javanese version and the Sanskrit version of the text. In the latter2 Hiḍimbī appeals to Kuntī, Bhīma’s mother, after Bhīma keeps rejecting her. However, it is not Kuntī who gives the answer but Yudhiṣṭhira, her son: he is the one who gives permission to Hiḍimbī to take Bhīma as her husband. We should remember that Kuntī at this point in the story is a widow; her husband died a long time ago. Yudhiṣṭhira is her eldest son. In the Old Javanese version it is Kuntī herself who answers Hiḍimbī.This difference between the Sanskrit Mahābhārata and the Old Javanese Mahābhārata is interesting, because it reflects a well-known difference between traditional Indian and Indonesian societies concerning the position of women. It is archetypical for the difference between the two versions of the text in general: the Old Javanese version follows the story faithfully but gives its own twist to it. This interpretation, I have to admit, is not generally accepted. The established scholarly opinion has it that the Old Javanese Mahābhārata is a shortened derivative, meaning that it copies or imitates the Sanskrit story, shortening it without adding anything new to the story.

  5. XRF 100316D/SN 2010bh AND THE NATURE OF GAMMA-RAY BURST SUPERNOVAE

    International Nuclear Information System (INIS)

    Cano, Z.; Bersier, D.; Guidorzi, C.; Kobayashi, S.; Melandri, A.; Mundell, C. G.; Levan, A. J.; Tanvir, N. R.; Wiersema, K.; D'Avanzo, P.; Margutti, R.; Fruchter, A. S.; Garnavich, P.; Gomboc, A.; Kopac, D.; Gorosabel, J.; Kasen, D.; Mazzali, P. A.; Nugent, P. E.; Pian, E.

    2011-01-01

    We present ground-based and Hubble Space Telescope optical and infrared observations of Swift XRF 100316D/SN 2010bh. It is seen that the optical light curves of SN 2010bh evolve at a faster rate than the archetype gamma-ray burst supernova (GRB-SN) 1998bw, but at a similar rate to SN 2006aj, an SN that was spectroscopically linked with XRF 060218, and at a similar rate to the non-GRB associated Type Ic SN 1994I. We estimate the rest-frame extinction of this event from our optical data to be E(B - V) = 0.18 ± 0.08 mag. We find the V-band absolute magnitude of SN 2010bh to be M V = -18.62 ± 0.08, which is the faintest peak V-band magnitude observed to date for spectroscopically confirmed GRB-SNe. When we investigate the origin of the flux at t - t 0 = 0.598 days, it is shown that the light is not synchrotron in origin, but is likely coming from the SN shock breakout. We then use our optical and infrared data to create a quasi-bolometric light curve of SN 2010bh, which we model with a simple analytical formula. The results of our modeling imply that SN 2010bh synthesized a nickel mass of M Ni ∼ 0.1 M sun , ejected M ej ∼ 2.2 M sun , and has an explosion energy of E k ∼ 1.4 x 10 52 erg. Thus, while SN 2010bh is an energetic explosion, the amount of nickel created during the explosion is much less than that of SN 1998bw and only marginally more than SN 1994I. Finally, for a sample of 22 GRB-SNe we check for a correlation between the stretch factors and luminosity factors in the R band and conclude that no statistically significant correlation exists.

  6. Detailed hydrodynamic and X-ray spectrocsopic analysis of a laser-produced rapidly-explanding aluminium plasma

    Czech Academy of Sciences Publication Activity Database

    Chambers, D. M.; Glenzer, S. H.; Hawreliak, J.; Wolfrum, E.; Gouveia, A.; Lee, R. W.; Marjoribanks, R. S.; Renner, Oldřich; Sondhauss, P.; Topping, S.

    2001-01-01

    Roč. 71, - (2001), s. 237-247 ISSN 0022-4073 Grant - others:US DOE(US) DESG03-99D-P00297; US Department of Energy(US) W-7405 ENG 48 Institutional research plan: CEZ:AV0Z1010921 Keywords : laser produced plasma * x-ray spectroscopy * Thomson scattering * hydrocode Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.493, year: 2001

  7. Electronic and optical properties of diamond/organic semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

    2007-07-01

    Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

  8. Alkaline sodium borohydride gel as a hydrogen source for PEMFC or an energy carrier for NaBH{sub 4}-air battery

    Energy Technology Data Exchange (ETDEWEB)

    Liu, B.H. [Department of Materials and Engineering, Zhejiang University (China); Li, Z.P.; Chen, L.L. [Department of Chemical and Biochemical Engineering, Zhejiang University, Hangzhou 310027 (China)

    2008-05-15

    In this preliminary study, we tried to use sodium polyacrylate as the super absorbent polymer to form alkaline NaBH{sub 4} gel and explored its possibilities for borohydride hydrolysis and borohydride electro-oxidation. It was found that the absorption capacity of sodium polyacrylate decreased with increasing NaBH{sub 4} concentration. The formed gel was rather stable in the sealed vessel but tended to slowly decompose in open air. Hydrogen generation from the gel was carried out using CoCl{sub 2} catalyst precursor solutions. Hydrogen generation rate from the alkaline NaBH{sub 4} gel was found to be higher and impurities in hydrogen were less than that from the alkaline NaBH{sub 4} solution. The NaBH{sub 4} gel also successfully powered a NaBH{sub 4}-air battery. (author)

  9. Hydrolysis of Mg(BH4)2 and its coordination compounds as a way to obtain hydrogen

    Science.gov (United States)

    Solovev, Mikhail V.; Chashchikhin, Oleg V.; Dorovatovskii, Pavel V.; Khrustalev, Victor N.; Zyubin, A. S.; Zyubina, T. S.; Kravchenko, O. V.; Zaytsev, Alexey A.; Dobrovolsky, Yu. A.

    2018-02-01

    Three ligand-stabilized Mg(BH4)2-based complexes have been synthesized and evaluated as potential hydrogen storage media for portable fuel cell applications. The new borohydrides: Mg(BH4)2 × 0.5Et2O and Mg(BH4)2 × diglyme (diglyme - CH3O(CH2)2O(CH2)2OCH3) have been synthesized and examined by X-ray single crystal diffraction method. Hydrolysis reactions of the compounds liberate hydrogen in quantities ranging from 46 to 96% of the theoretical yield. The hydrolysis of Mg(BH4)2 and other borohydrides is also accompanied by the diborane formation. The amount of liberated diborane depends on the Mg-coordination environment. To explain this fact quantum-chemical calculations have been performed. It is shown that formation of Mg-O-Mg-bridges enables the side process of diborane generation. It means that the size and denticity of the ligand directly affects the amount of released diborane. In general, the larger the ligand and the higher its denticity, the smaller is amount of diborane produced. The new compound Mg(BH4)2 × diglyme decomposes without diborane formation that allows one to be considered as a new promising chemical hydrogen storage compound for the practical usage.

  10. A compact, quasi-monochromatic laser-plasma EUV source based on a double-stream gas-puff target at 13.8 nm wavelength

    Czech Academy of Sciences Publication Activity Database

    Wachulak, P.W.; Bartnik, A.; Fiedorowicz, H.; Feigl, T.; Jarocki, R.; Kostecki, J.; Rudawski, P.; Sawicka, Magdalena; Szczurek, M.; Szczurek, A.; Zawadzki, Z.

    2010-01-01

    Roč. 100, č. 3 (2010), 461-469 ISSN 0946-2171 Institutional research plan: CEZ:AV0Z10100523 Keywords : laser-plasma * EUV source * gas puff target * elliptical multi- layer * mirror * table-top setup Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.239, year: 2010

  11. Laboratoř interferometrie a vysoce koherentních laserů

    Czech Academy of Sciences Publication Activity Database

    Lazar, Josef; Číp, Ondřej; Jedlička, Petr; Mikel, Břetislav; Růžička, Bohdan; Buchta, Zdeněk; Hrabina, Jan; Šmíd, Radek; Čížek, Martin

    2008-01-01

    Roč. 53, č. 1 (2008), s. 16-19 ISSN 0447-6441 R&D Projects: GA AV ČR IAA200650504; GA AV ČR KAN311610701; GA MŠk 2C06012; GA ČR GA102/07/1179; GA MPO FT-TA3/133; GA MPO 2A-1TP1/127; GA AV ČR KJB200650503 Institutional research plan: CEZ:AV0Z20650511 Keywords : interferometry * laser technology * metrology * spectroscopy Subject RIV: BH - Optics, Masers, Lasers

  12. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  13. Laser diode current controller with a high level of protection against electromagnetic interference

    Czech Academy of Sciences Publication Activity Database

    Lazar, Josef; Jedlička, Petr; Číp, Ondřej; Růžička, Bohdan

    2003-01-01

    Roč. 74, č. 8 (2003), s. 3816 - 3819 ISSN 0034-6748 R&D Projects: GA AV ČR IBS2508201; GA AV ČR IAA2065803; GA ČR GA101/01/1104; GA AV ČR IBS2065009 Institutional research plan: CEZ:AV0Z2065902 Keywords : laser diode * electromagnetic interference * ripple free voltage Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.343, year: 2003

  14. Studies of the effects of TiCl3 in LiBH4/CaH2/TiCl3 reversible hydrogen storage system

    International Nuclear Information System (INIS)

    Liu Dongan; Yang Jun; Ni Jun; Drews, Andy

    2012-01-01

    Highlights: ► We systematically studied the effects of TiCl 3 in LiBH 4 /CaH 2 /TiCl 3 hydrogen storage system. ► It is found that adding 0.25 TiCl 3 produces fully reversible hydrogen absorption and desorption and a lower desorption temperature. ► LiCl experiences four different states, i.e. “formed-solid solution-molten solution-precipitation”, in the whole desorption process of the system. ► The incorporation of LiCl into LiBH 4 forms more viscous molten LiBH 4 ·LiCl, leading to fast kinetics. ► The precipitation and re-incorporation of LiCl into LiBH 4 lead to a fully reversible complex hydrogen storage system. - Abstract: In the present study, the effects of TiCl 3 on desorption kinetics, absorption/desorption reversibility, and related phase transformation processes in LiBH 4 /CaH 2 /TiCl 3 hydrogen storage system was studied systematically by varying its concentration (x = 0, 0.05, 0.15 and 0.25). The results show that LiCl forms during ball milling of 6LiBH 4 /CaH 2 /xTiCl 3 and that as temperature increases, o-LiBH 4 transforms into h-LiBH 4 , into which LiCl incorporates, forming solid solution of LiBH 4 ·LiCl, which melts above 280 °C. Molten LiBH 4 ·LiCl is more viscous than molten LiBH 4 , preventing the clustering of LiBH 4 and the accompanied agglomeration of CaH 2 , and thus preserving the nano-sized phase arrangement formed during ball milling. Above 350 °C, the molten solution LiBH 4 ·LiCl further reacts with CaH 2 , precipitating LiCl. The main hydrogen desorption reaction is between molten LiBH 4 ·LiCl and CaH 2 and not between molten LiBH 4 and CaH 2 . This alters the hydrogen reaction thermodynamics and lowers the hydrogen desorption temperature. In addition, the solid–liquid nano-sized phase arrangement in the nano-composites improves the hydrogen reaction kinetics. The reversible incorporation/precipitation of LiCl at the hydrogen reaction temperature and during temperature cycling makes the 6LiBH 4 /CaH 2 /0.25TiCl 3

  15. Hydrogen Generation from Al-NiCl2/NaBH4 Mixture Affected by Lanthanum Metal

    Directory of Open Access Journals (Sweden)

    Wen Qiang Sun

    2012-01-01

    Full Text Available The effect of La on Al/NaBH4 hydrolysis was elaborated in the present paper. Hydrogen generation amount increases but hydrogen generation rate decreases with La content increasing. There is an optimized composition that Al-15 wt% La-5 wt% NiCl2/NaBH4 mixture (Al-15 wt% La-5 wt% NiCl2/NaBH4 weight ratio, 1 : 3 has 126 mL g−1 min−1 maximum hydrogen generation rate and 1764 mL g−1 hydrogen generation amount within 60 min. The efficiency is 88%. Combined with NiCl2, La has great effect on NaBH4 hydrolysis but has little effect on Al hydrolysis. Increasing La content is helpful to decrease the particle size of Al-La-NiCl2 in the milling process, which induces that the hydrolysis byproduct Ni2B is highly distributed into Al(OH3 and the catalytic reactivity of Ni2B/Al(OH3 is increased therefore. But hydrolysis byproduct La(OH3 deposits on Al surface and leads to some side effect. The Al-La-NiCl2/NaBH4 mixture has good stability in low temperature and its hydrolytic performance can be improved with increasing global temperature. Therefore, the mixture has good safety and can be applied as on board hydrogen generation material.

  16. Hydrogen generation from Al-NiCl2/NaBH4 mixture affected by lanthanum metal.

    Science.gov (United States)

    Sun, Wen Qiang; Fan, Mei-Qiang; Fei, Yong; Pan, Hua; Wang, Liang Liang; Yao, Jun

    2012-01-01

    The effect of La on Al/NaBH(4) hydrolysis was elaborated in the present paper. Hydrogen generation amount increases but hydrogen generation rate decreases with La content increasing. There is an optimized composition that Al-15 wt% La-5 wt% NiCl(2)/NaBH(4) mixture (Al-15 wt% La-5 wt% NiCl(2)/NaBH(4) weight ratio, 1 : 3) has 126 mL g(-1 )min(-1) maximum hydrogen generation rate and 1764 mL g(-1) hydrogen generation amount within 60 min. The efficiency is 88%. Combined with NiCl(2), La has great effect on NaBH(4) hydrolysis but has little effect on Al hydrolysis. Increasing La content is helpful to decrease the particle size of Al-La-NiCl(2) in the milling process, which induces that the hydrolysis byproduct Ni(2)B is highly distributed into Al(OH)(3) and the catalytic reactivity of Ni(2)B/Al(OH)(3) is increased therefore. But hydrolysis byproduct La(OH)(3) deposits on Al surface and leads to some side effect. The Al-La-NiCl(2)/NaBH(4) mixture has good stability in low temperature and its hydrolytic performance can be improved with increasing global temperature. Therefore, the mixture has good safety and can be applied as on board hydrogen generation material.

  17. Quantum engineering of transistors based on 2D materials heterostructures

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  18. Quantum engineering of transistors based on 2D materials heterostructures.

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  19. Impacts of ambient and ablation plasmas on short- and ultrashort-pulse laser processing of surfaces

    Czech Academy of Sciences Publication Activity Database

    Bulgakova, Nadezhda M.; Panchenko, A.N.; Zhukov, V.P.; Kudryashov, S.I.; Pereira, A.; Marine, W.; Mocek, Tomáš; Bulgakov, A.V.

    2014-01-01

    Roč. 5, č. 4 (2014), s. 1344-1372 ISSN 2072-666X R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : pulsed laser ablation * laser material processing * laser plasma * ambient gas breakdown * material redeposition * plasma pipe formation * microstructures Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.269, year: 2014

  20. Hydrogen dynamics in the low temperature phase of LiBH{sub 4} probed by quasielastic neutron scattering

    Energy Technology Data Exchange (ETDEWEB)

    Remhof, Arndt, E-mail: arndt.remhof@empa.ch [Empa, Swiss Federal Institute for Materials Science and Technology, Hydrogen and Energy, CH-8600 Dübendorf (Switzerland); Züttel, Andreas [Empa, Swiss Federal Institute for Materials Science and Technology, Hydrogen and Energy, CH-8600 Dübendorf (Switzerland); Ramirez-Cuesta, Timmy; García-Sakai, Victoria [ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom); Frick, Bernhard [Institut Laue-Langevin, F-38002 Grenoble (France)

    2013-12-12

    Highlights: • Inelastic fixed window sans offer new possibilities in neutron backscattering spectrometers. • Two different kind of reorientational motion were identified in the low temperature phase of LiBH{sub 4}. • Thermally activated jump rotation. - Abstract: LiBH{sub 4} contains 18.5 wt% hydrogen and undergoes a structural phase transition (orthorhombic → hexagonal) at 381 K which is associated with a large increase in hydrogen and lithium solid-state mobility. We investigated the hydrogen dynamics in the low temperature phase of LiBH{sub 4} by quasielastic neutron scattering, including a new kind of inelastic fixed window scan (IFWS). In the temperature range from 175 to 380 K the H-dynamics is dominated by thermally activated rotational jumps of the [BH{sub 4}]{sup −} anion around the c3 axis with an activation energy of about 162 meV. In agreement with earlier NMR data, a second type of thermally activated motion with an activation energy of about 232 meV could be identified using the IFWS. The present study of hydrogen dynamics in LiBH{sub 4} illustrates the feasibility of using IFWS on neutron backscattering spectrometers as a probe of localised motion.

  1. Evaluations of electric field in laser-generated pulsed plasma

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Gammino, S.; Láska, Leoš; Krása, Josef; Rohlena, Karel; Wolowski, J.

    2006-01-01

    Roč. 56, Suppl. B (2006), B580-B585 ISSN 0011-4626. [Symposium on Plasma Physics and Technology /22./. Prague, 26.06.2006-29.06.2006] Institutional research plan: CEZ:AV0Z10100523 Keywords : electric field in plasma * debye length * plasma temperature * plasma density Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.568, year: 2006

  2. ELIMED, future hadrontherapy applications of laser-accelerated beams

    Czech Academy of Sciences Publication Activity Database

    Cirrone, Giuseppe A.P.; Carpinelli, M.; Cuttone, G.; Gammino, S.; Jia, S.B.; Korn, Georg; Maggiore, Mario; Manti, L.; Margarone, Daniele; Prokůpek, Jan; Renis, M.; Romano, F.; Schillaci, Francesco; Tomasello, B.; Torrisi, L.; Tramontana, A.; Velyhan, Andriy

    2013-01-01

    Roč. 730, Dec (2013), s. 174-177 ISSN 0168-9002. [International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices /9./(RESMDD). Florence, 09.10.2012-12.10.2012] R&D Projects: GA ČR(CZ) GAP205/11/1165; GA MŠk ED1.1.00/02.0061; GA MŠk EE.2.3.20.0087 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087 Institutional support: RVO:68378271 Keywords : laser acceleration * cancer treatment * particle selection * Monte Carlo simulation * beam handling Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.316, year: 2013

  3. Cryogenically-cooled Yb:YGAG ceramic mode-locked laser

    Czech Academy of Sciences Publication Activity Database

    Mužík, Jiří; Jelínek, M.; Jambunathan, Venkatesan; Miura, Taisuke; Smrž, Martin; Endo, Akira; Mocek, Tomáš; Kubeček, V.

    2015-01-01

    Roč. 24, č. 2 (2015), s. 1402-1408 ISSN 1094-4087 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA MŠk LO1602; GA MŠk EE2.3.30.0057 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : solid-states laser * lasing characteristics Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 3.148, year: 2015

  4. BH3 mimetics inhibit growth of chondrosarcoma--a novel targeted-therapy for candidate models.

    Science.gov (United States)

    Morii, Takeshi; Ohtsuka, Kouki; Ohnishi, Hiroaki; Mochizuki, Kazuo; Yoshiyama, Akira; Aoyagi, Takayuki; Hornicek, Francis J; Ichimura, Shoichi

    2014-11-01

    Chondrosarcoma is refractory to conventional chemotherapy. BH-3 mimetics ABT-737 and ABT-263 are synthetic small-molecule inhibitors of anti-apoptotic proteins B-cell lymphoma-2 (Bcl2) and Bcl-xL, which play a critical role in survival of chondrosarcoma cells. Chondrosarcoma cell lines SW-1353 and CS-1 were used as the disease model. We used immunoblotting to assess the expression of target molecules Bcl2 and Bcl-xL, and the apoptotic inducers Bcl2-associated X (Bax) and Bcl2-antagonist/killer (Bak). In vitro growth inhibition by BH-3 mimetics was confirmed by photomicroscopic cell counting and 3-(4,5-dimethylthiazol-2-yl)-5-(3-carboxymethoxyphenyl)-2-(4-sulfophenyl)-2H-tetrazolium, inner salt (MTS) assay. Apoptotic induction was confirmed by Enzyme-Linked ImmunoSorbent Assay (ELISA). In vivo growth inhibition was assessed in a non-obese diabetic/severe combined immunodeficient (NOD/SCID) mouse model. Expression of the target and effector molecules was confirmed in chondrosarcoma cell lines. BH3 mimetics significantly inhibited cell growth and induced apoptosis in vitro. Administration of ABT-263 inhibited chondrosarcoma growth and improved survival in a mouse model. BH3 mimetics represent a novel treatment modality for chondrosarcoma. Copyright© 2014 International Institute of Anticancer Research (Dr. John G. Delinassios), All rights reserved.

  5. RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Gammino, S.; Picciotto, A.; Wolowski, J.; Krása, Josef; Láska, Leoš; Calcagnile, L.; Quarta, G.

    2005-01-01

    Roč. 160, 10-12 (2005), s. 685-695 ISSN 1042-0150. [Workshop PIBHI 2005 /2./. Giardini Naxos, 08.06.06-11.06.06] R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : RBS analysis * ion implantation * plasma-generated by lasers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.353, year: 2005

  6. Microchip Yb:CaLnAlO.sub.4./sub. lasers with up to 91% slope efficiency

    Czech Academy of Sciences Publication Activity Database

    Loiko, P.; Serres, J.M.; Mateos, X.; Xu, X.; Xu, J.; Jambunathan, Venkatesan; Navrátil, Petr; Lucianetti, Antonio; Mocek, Tomáš; Zhang, X.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F.; Major, A.

    2017-01-01

    Roč. 42, č. 13 (2017), s. 2431-2434 ISSN 0146-9592 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086 EU Projects: European Commission(XE) 657424 - QuantumLaP Institutional support: RVO:68378271 Keywords : microchip Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 3.416, year: 2016

  7. The electron cyclotron resonance coupled to laser ion source for charge state enhancement experiment: production of high inensity ion beams by means of hybrid ion source

    Czech Academy of Sciences Publication Activity Database

    Gammino, S.; Torrisi, L.; Ciavola, G.; Andó, L.; Celona, L.; Manciagli, S.; Krása, Josef; Láska, Leoš; Pfeifer, Miroslav; Rohlena, Karel; Mazzasalma, A. M.; Gentile, C.; Picciotto, A.; Wolowski, J.; Woryna, E.; Badziak, J.; Parys, P.; Hitz, D.; Shirkov, G. D.

    2004-01-01

    Roč. 96, č. 5 (2004), s. 2961-2967 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z1010921 Keywords : laser ion sources * ECR ion sources Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.255, year: 2004

  8. Canonical Bcl-2 motifs of the Na+/K+ pump revealed by the BH3 mimetic chelerythrine: early signal transducers of apoptosis?

    Science.gov (United States)

    Lauf, Peter K; Heiny, Judith; Meller, Jarek; Lepera, Michael A; Koikov, Leonid; Alter, Gerald M; Brown, Thomas L; Adragna, Norma C

    2013-01-01

    Chelerythrine [CET], a protein kinase C [PKC] inhibitor, is a prop-apoptotic BH3-mimetic binding to BH1-like motifs of Bcl-2 proteins. CET action was examined on PKC phosphorylation-dependent membrane transporters (Na+/K+ pump/ATPase [NKP, NKA], Na+-K+-2Cl+ [NKCC] and K+-Cl- [KCC] cotransporters, and channel-supported K+ loss) in human lens epithelial cells [LECs]. K+ loss and K+ uptake, using Rb+ as congener, were measured by atomic absorption/emission spectrophotometry with NKP and NKCC inhibitors, and Cl- replacement by NO3ˉ to determine KCC. 3H-Ouabain binding was performed on a pig renal NKA in the presence and absence of CET. Bcl-2 protein and NKA sequences were aligned and motifs identified and mapped using PROSITE in conjunction with BLAST alignments and analysis of conservation and structural similarity based on prediction of secondary and crystal structures. CET inhibited NKP and NKCC by >90% (IC50 values ~35 and ~15 μM, respectively) without significant KCC activity change, and stimulated K+ loss by ~35% at 10-30 μM. Neither ATP levels nor phosphorylation of the NKA α1 subunit changed. 3H-ouabain was displaced from pig renal NKA only at 100 fold higher CET concentrations than the ligand. Sequence alignments of NKA with BH1- and BH3-like motifs containing pro-survival Bcl-2 and BclXl proteins showed more than one BH1-like motif within NKA for interaction with CET or with BH3 motifs. One NKA BH1-like motif (ARAAEILARDGPN) was also found in all P-type ATPases. Also, NKA possessed a second motif similar to that near the BH3 region of Bcl-2. Findings support the hypothesis that CET inhibits NKP by binding to BH1-like motifs and disrupting the α1 subunit catalytic activity through conformational changes. By interacting with Bcl-2 proteins through their complementary BH1- or BH3-like-motifs, NKP proteins may be sensors of normal and pathological cell functions, becoming important yet unrecognized signal transducers in the initial phases of apoptosis. CET

  9. MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Veit

    2011-04-18

    The presented work describes the metal organic vapor phase epitaxy and characterization of nitride-based quantum structures which are used in laser heterostructures emitting in the wavelength range between 400 nm and 440 nm. Aiming at current injection and optically pumped laser structures with low threshold current or respectively threshold power densities, the device properties were correlated with the material properties of the indium gallium nitride (InGaN) active region. Furthermore, the influence of the active region and waveguide heterostructure layout on the material gain as well as the modal gain was investigated. In order to understand the InGaN growth process and the formation of structural imperfections, 15 nm-100 nm thick InGaN single layers were deposited on gallium nitride (GaN) on sapphire substrates and analyzed subsequently. It turned out that the spiral pattern of the growth edges around screw dislocations, threading from the substrate to the growth surface, and the formation of additional V-shaped surface defects are the main cause for the deterioration of the crystal perfection of the InGaN. As a result of the transition from a layer-by-layer to a 3D growth regime stable facets with preferred indium incorporation are formed that increase the lateral variation of the indium mole fraction in the layer. The higher indium incorporation at the facets is explained by dynamical elasticity theory and proven by the growth and characterization of InGaN layers on differently oriented GaN. The material properties of the InGaN quantum wells were correlated with laser device properties using 400 nm laser structures: In the case of thin quantum wells the 3D growth results in a lateral variation of the band gap due to variations of the indium mole fraction and the well width. Systematical investigations of laser structures with different band gap fluctuations show an increase of the threshold power density as the lateral variation of the band gap increases. It

  10. Heterostructures based on two-dimensional layered materials and their potential applications

    KAUST Repository

    Li, Ming-yang; Chen, Chang-Hsiao; Shi, Yumeng; Li, Lain-Jong

    2015-01-01

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  11. Heterostructures based on two-dimensional layered materials and their potential applications

    KAUST Repository

    Li, Ming-yang

    2015-12-04

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  12. Hydrogen storage properties of rare earth (RE) borohydrides (RE = La, Er) in composite mixtures with LiBH{sub 4} and LiH

    Energy Technology Data Exchange (ETDEWEB)

    Frommen, Christoph; Heere, Michael [Institute for Energy Technology, Physics Department, P.O. Box 40, NO-2027 Kjeller (Norway); Riktor, Marit D. [Institute for Energy Technology, Physics Department, P.O. Box 40, NO-2027 Kjeller (Norway); SINTEF Materials and Chemistry, Forskningsveien 1, NO-0314 Oslo (Norway); Sørby, Magnus H. [Institute for Energy Technology, Physics Department, P.O. Box 40, NO-2027 Kjeller (Norway); Hauback, Bjørn C., E-mail: bjorn.hauback@ife.no [Institute for Energy Technology, Physics Department, P.O. Box 40, NO-2027 Kjeller (Norway)

    2015-10-05

    Highlights: • 6LiBH{sub 4}–RECl{sub 3}–3LiH composites (RE = La, Er) studied for the first time. • Drastically reduced decomposition temperature (300 {sup o}C) compared to LiBH{sub 4} (>400 °C). • Partial reversibility for 6LiBH{sub 4}–LaCl{sub 3}–3LiH: (19% at 340 °C, 10 MPa). • Excellent reversibility for 6LiBH{sub 4}–ErCl{sub 3}–3LiH: (80% at 340 °C, 10 MPa). • Reversibility comparable to that obtained for pure LiBH{sub 4} (76% at 600 °C and 15.5 MPa). - Abstract: Mixtures of 6LiBH{sub 4}–RECl{sub 3}–3LiH (RE = La, Er) have been produced by mechanochemical milling and their structure, thermal decomposition and reversibility have been studied. Hydrogen desorption starts around 300 °C in both composites. Heating to 400 °C yields LaB{sub 6}, ErB{sub 4} and REH{sub 2+δ} as major decomposition products. LiBH{sub 4} is destabilized by REH{sub 2+δ} formed through decomposition of the parent borohydrides LiLa(BH{sub 4}){sub 3}Cl and Er(BH{sub 4}){sub 3}, respectively, and its hydrogen release temperature is reduced by 100 °C as compared to pure ball-milled LiBH{sub 4}. The lanthanum-containing composite releases 4.2 wt.% H between 300 and 350 °C and shows a limited reversibility of ∼20% (340 °C, 10 MPa) probably due to hydrogen uptake by some amorphous boron-containing phases. For 6LiBH{sub 4}–ErCl{sub 3}–3LiH about 3 wt.% H is evolved up to 400 °C. Desorption against 0.5 MPa backpressure results in an increased reversibility (∼80%) as compared to vacuum (∼66%). Rehydrogenation (340 °C, 10 MPa) shows the formation of ErH{sub 3} and LiBH{sub 4} at drastically reduced conditions compared to pure LiBH{sub 4} (>400 °C, >10 MPa)

  13. Electron scattering times in ZnO based polar heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Falson, J., E-mail: j.falson@fkf.mpg.de [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Kozuka, Y. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); Smet, J. H. [Max Planck Institute for Solid State Research, D-70569 Stuttgart (Germany); Arima, T. [Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)

    2015-08-24

    The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10{sup 6} cm{sup 2}/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

  14. Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses

    Czech Academy of Sciences Publication Activity Database

    Janda, Tomáš; Roy, P.E.; Otxoa, R.M.; Šobáň, Zbyněk; Ramsay, A.; Irvine, A.C.; Trojánek, F.; Surynek, M.; Campion, R. P.; Gallagher, B. L.; Němec, P.; Jungwirth, Tomáš; Wunderlich, Joerg

    2017-01-01

    Roč. 8, May (2017), 1-7, č. článku 15226. ISSN 2041-1723 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 610115 - SC2 Institutional support: RVO:68378271 Keywords : spintronics * domain walls Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 12.124, year: 2016

  15. Efficient ASE management in disk laser amplifiers with variable absorbing clads

    Czech Academy of Sciences Publication Activity Database

    Slezák, Ondřej; Lucianetti, Antonio; Mocek, Tomáš

    2014-01-01

    Roč. 50, č. 12 (2014), s. 1052-1060 ISSN 0018-9197 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : amplifiers * laser * absorbing * Yb:YAG * multi slab Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.887, year: 2014

  16. Direct Rehydrogenation of LiBH4 from H-Deficient Li2B12H12−x

    Directory of Open Access Journals (Sweden)

    Yigang Yan

    2018-03-01

    Full Text Available Li2B12H12 is commonly considered as a boron sink hindering the reversible hydrogen sorption of LiBH4. Recently, in the dehydrogenation process of LiBH4 an amorphous H-deficient Li2B12H12−x phase was observed. In the present study, we investigate the rehydrogenation properties of Li2B12H12−x to form LiBH4. With addition of nanostructured cobalt boride in a 1:1 mass ratio, the rehydrogenation properties of Li2B12H12−x are improved, where LiBH4 forms under milder conditions (e.g., 400 °C, 100 bar H2 with a yield of 68%. The active catalytic species in the reversible sorption reaction is suggested to be nonmetallic CoxB (x = 1 based on 11B MAS NMR experiments and its role has been discussed.

  17. Anomalous B-H behaviour of electrical steels at very low flux density

    Energy Technology Data Exchange (ETDEWEB)

    Zurek, Stan [Wolfson Centre for Magnetics, School of Engineering, Cardiff University, Cardiff CF24 3AA (United Kingdom)], E-mail: ZurekS@cardiff.ac.uk; Al-Naemi, Faris; Moses, Anthony J.; Marketos, Philip [Wolfson Centre for Magnetics, School of Engineering, Cardiff University, Cardiff CF24 3AA (United Kingdom)

    2008-10-15

    The behaviour of ferromagnetic materials under very low magnetic field was investigated more than a century ago by Lord Rayleigh. However, it has been shown since that the so-called Rayleigh law fails for very low magnetic fields, although the explanation for this phenomenon was not given. An anomalous B-H behaviour at very low alternating peak flux density in conventional grain-oriented (GO) and non-oriented (NO) electrical steels is reported. It has been found that the initial permeability is constant for all the measured frequencies (from 20 to 400 Hz) at peak flux density below 0.1 mT, and in this region the magnetisation is almost reversible (for both GO and NO). At higher flux density the B-H loops become visibly irreversible, with a relatively narrow (for GO) or very wide (for NO) transition region. For GO the B-H loop becomes visibly 'distorted' for all frequencies at around 2 mT. The eddy current loss calculated from the so-called 'classical' equation gives values higher than the measured total losses at lower frequencies. Both these measured results are difficult to explain.

  18. Laser-induced damage threshold tests of ultrafast multilayer dielectric coatings in various environmental conditions relevant for operation of ELI beamlines laser systems

    Czech Academy of Sciences Publication Activity Database

    Ďurák, Michal; Velpula, Praveen K.; Kramer, Daniel; Cupal, Josef; Medřík, Tomáš; Hřebíček, Jan; Golasowski, Jiří; Peceli, Davorin; Kozlová, Michaela; Rus, Bedřich

    2017-01-01

    Roč. 56, č. 1 (2017), s. 1-6, č. článku 011024. ISSN 0091-3286 R&D Projects: GA MŠk LQ1606; GA MŠk LM2015065; GA MŠk ED1.1.00/02.0061; GA MŠk EE.2.3.20.0091; GA MŠk EF15_008/0000162 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OP VK 1 Laser Sys(XE) CZ.1.07/2.3.00/20.0091; ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 Keywords : Peta-watt class laser s * ultrafast laser s * behavior at different vacuum levels * cleaning treatment Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.082, year: 2016

  19. Continuous-wave and passively Q-switched cryogenic Yb: KLu(WO.sub.4./sub.).sub.2./sub. laser

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Petr; Jambunathan, Venkatesan; Paul David, Samuel; Yue, Fangxin; Serres, J.M.; Mateos, X.; Aguilo, M.; Diaz, F.; Griebner, U.; Petrov, V.; Lucianetti, Antonio; Mocek, Tomáš

    2017-01-01

    Roč. 25, č. 21 (2017), s. 25886-25893 ISSN 1094-4087 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086 EU Projects: European Commission(XE) 739573 - HiLASE CoE Grant - others:OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674 Institutional support: RVO:68378271 Keywords : diode-pumped lasers * laser materials Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 3.307, year: 2016

  20. Advanced Semiconductor Heterostructures Novel Devices, Potential Device Applications and Basic Properties

    CERN Document Server

    Stroscio, Michael A

    2003-01-01

    This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the pr

  1. Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

    International Nuclear Information System (INIS)

    Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

    1989-01-01

    Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

  2. Microchip laser operation of Yb-doped gallium garnets

    Czech Academy of Sciences Publication Activity Database

    Serres, J.M.; Jambunathan, Venkatesan; Loiko, P.; Mateos, X.; Yu, H.; Zhang, H.; Liu, J.; Lucianetti, Antonio; Mocek, Tomáš; Yumashev, K.; Griebner, U.; Petrov, V.; Aguilo, M.; Diaz, F.

    2016-01-01

    Roč. 6, č. 1 (2016), s. 46-57 ISSN 2159-3930 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA ČR GA14-01660S Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : thermal-conductivity * crystal * temperature * Y 3 AL 5 O 12 * YAG * performance * CNGG Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 2.591, year: 2016

  3. The deprotonation energies of BH5 and AlH5: Comparisons to GaH5

    International Nuclear Information System (INIS)

    Speakman, Lucas D.; Turney, Justin M.; Schaefer, Henry F.

    2007-01-01

    Hypercoordinate boron is most unusual, leading to considerable theoretical and experimental research on the parent BH 5 molecule. The deprotonation energies of BH 5 and the related molecules AlH 5 and GaH 5 have been of particular interest. Here the energy differences for XH 5 ->XH 4 - +H(X=BandAl) are computed to be 332.4 and 326.3kcalmol -1 , respectively, with an aug-cc-pVQZ basis set at the CCSD(T) level of theory. Vibrational frequencies for BH 4 - and AlH 4 - are also reported as 1098, 1210, 2263, and 2284cm -1 and 760, 779, 1658, and 1745cm -1 , respectively, again at the CCSD(T) aug-cc-pVQZ level of theory. Comparisons with the valence isoelectronic GaH 5 molecule are made

  4. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Verreck, Devin, E-mail: devin.verreck@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, 3001 Leuven (Belgium); Van de Put, Maarten; Sorée, Bart; Magnus, Wim [imec, Kapeldreef 75, 3001 Leuven (Belgium); Departement of Physics, Universiteit Antwerpen, 2020 Antwerpen (Belgium); Verhulst, Anne S.; Collaert, Nadine; Thean, Aaron [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2014-02-07

    Heterostructure tunnel field-effect transistors (HTFET) are promising candidates for low-power applications in future technology nodes, as they are predicted to offer high on-currents, combined with a sub-60 mV/dec subthreshold swing. However, the effects of important quantum mechanical phenomena like size confinement at the heterojunction are not well understood, due to the theoretical and computational difficulties in modeling realistic heterostructures. We therefore present a ballistic quantum transport formalism, combining a novel envelope function approach for semiconductor heterostructures with the multiband quantum transmitting boundary method, which we extend to 2D potentials. We demonstrate an implementation of a 2-band version of the formalism and apply it to study confinement in realistic heterostructure diodes and p-n-i-n HTFETs. For the diodes, both transmission probabilities and current densities are found to decrease with stronger confinement. For the p-n-i-n HTFETs, the improved gate control is found to counteract the deterioration due to confinement.

  5. Canonical Bcl-2 Motifs of the Na+/K+ Pump Revealed by the BH3 Mimetic Chelerythrine: Early Signal Transducers of Apoptosis?

    Directory of Open Access Journals (Sweden)

    Peter K. Lauf

    2013-02-01

    Full Text Available Background/Aims: Chelerythrine [CET], a protein kinase C [PKC] inhibitor, is a prop-apoptotic BH3-mimetic binding to BH1-like motifs of Bcl-2 proteins. CET action was examined on PKC phosphorylation-dependent membrane transporters (Na+/K+ pump/ATPase [NKP, NKA], Na+-K+-2Cl+ [NKCC] and K+-Cl- [KCC] cotransporters, and channel-supported K+ loss in human lens epithelial cells [LECs]. Methods: K+ loss and K+ uptake, using Rb+ as congener, were measured by atomic absorption/emission spectrophotometry with NKP and NKCC inhibitors, and Cl- replacement by NO3ˉ to determine KCC. 3H-Ouabain binding was performed on a pig renal NKA in the presence and absence of CET. Bcl-2 protein and NKA sequences were aligned and motifs identified and mapped using PROSITE in conjunction with BLAST alignments and analysis of conservation and structural similarity based on prediction of secondary and crystal structures. Results: CET inhibited NKP and NKCC by >90% (IC50 values ∼35 and ∼15 µM, respectively without significant KCC activity change, and stimulated K+ loss by ∼35% at 10-30 µM. Neither ATP levels nor phosphorylation of the NKA α1 subunit changed. 3H-ouabain was displaced from pig renal NKA only at 100 fold higher CET concentrations than the ligand. Sequence alignments of NKA with BH1- and BH3-like motifs containing pro-survival Bcl-2 and BclXl proteins showed more than one BH1-like motif within NKA for interaction with CET or with BH3 motifs. One NKA BH1-like motif (ARAAEILARDGPN was also found in all P-type ATPases. Also, NKA possessed a second motif similar to that near the BH3 region of Bcl-2. Conclusion: Findings support the hypothesis that CET inhibits NKP by binding to BH1-like motifs and disrupting the α1 subunit catalytic activity through conformational changes. By interacting with Bcl-2 proteins through their complementary BH1- or BH3-like-motifs, NKP proteins may be sensors of normal and pathological cell functions, becoming important yet

  6. Nonlinear Maxwell's and Schrodinger equations for describing the volumetric interaction of femtosecond laser pulses with transparent solid dielectrics: effect of the boundary conditions

    Czech Academy of Sciences Publication Activity Database

    Zhukov, V.P.; Bulgakova, Nadezhda M.; Fedoruk, M.P.

    2017-01-01

    Roč. 84, č. 7 (2017), s. 439-446 ISSN 1070-9762 R&D Projects: GA MŠk LO1602; GA ČR GA16-12960S Institutional support: RVO:68378271 Keywords : glass * femtosecond laser pulses * Maxwell's and Schrdinger equations Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 0.299, year: 2016

  7. 100 J-level nanosecond pulsed diode pumped solid state laser

    Czech Academy of Sciences Publication Activity Database

    Banerjee, S.; Mason, P.D.; Ertel, K.; Phillips, P.J.; De Vido, M.; Chekhlov, O.; Divoký, Martin; Pilař, Jan; Smith, J.; Butcher, T.; Lintern, A.; Tomlinson, S.; Shaikh, W.; Hooker, Ch.; Lucianetti, Antonio; Hernandez-Gomez, C.; Mocek, Tomáš; Edwards, Ch.; Collier, J.L.

    2016-01-01

    Roč. 41, č. 9 (2016), s. 2089-2092 ISSN 0146-9592 R&D Projects: GA MŠk ED2.1.00/01.0027 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027 Institutional support: RVO:68378271 Keywords : high average power * efficiency * amplifier Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.416, year: 2016

  8. BH3105 type neutron dose equivalent meter of high sensitivity

    International Nuclear Information System (INIS)

    Ji Changsong; Zhang Enshan; Yang Jianfeng; Zhang Hong; Huang Jiling

    1995-10-01

    It is noted that to design a neutron dose meter of high sensitivity is almost impossible in the frame of traditional designing principle--'absorption net principle'. Based on a newly proposed principle of obtaining neutron dose equi-biological effect adjustment--' absorption stick principle', a brand-new neutron dose-equivalent meter with high neutron sensitivity BH3105 has been developed. Its sensitivity reaches 10 cps/(μSv·h -1 ), which is 18∼40 times higher than one of foreign products of the same kind and is 10 4 times higher than that of domestic FJ342 neutron rem-meter. BH3105 has a measurement range from 0.1μSv/h to 1 Sv/h which is 1 or 2 orders wider than that of the other's. It has the advanced properties of gamma-resistance, energy response, orientation, etc. (6 tabs., 5 figs.)

  9. Collimation of laser-produced plasmas using axial magnetic field

    Czech Academy of Sciences Publication Activity Database

    Roy, Amitava; Harilal, S.S.; Hassan, S.M.; Endo, Akira; Mocek, Tomáš; Hassanein, A.

    2015-01-01

    Roč. 33, č. 2 (2015), s. 175-182 ISSN 0263-0346 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA MŠk EE2.3.30.0057 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : laser-produced plasma * optical emission spectroscopy * plasma-B field interaction * plasma temperature and density * tin plasma Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.649, year: 2015

  10. Alpha-helical destabilization of the Bcl-2-BH4-domain peptide abolishes its ability to inhibit the IP3 receptor.

    Directory of Open Access Journals (Sweden)

    Giovanni Monaco

    Full Text Available The anti-apoptotic Bcl-2 protein is the founding member and namesake of the Bcl-2-protein family. It has recently been demonstrated that Bcl-2, apart from its anti-apoptotic role at mitochondrial membranes, can also directly interact with the inositol 1,4,5-trisphosphate receptor (IP3R, the primary Ca(2+-release channel in the endoplasmic reticulum (ER. Bcl-2 can thereby reduce pro-apoptotic IP3R-mediated Ca(2+ release from the ER. Moreover, the Bcl-2 homology domain 4 (Bcl-2-BH4 has been identified as essential and sufficient for this IP3R-mediated anti-apoptotic activity. In the present study, we investigated whether the reported inhibitory effect of a Bcl-2-BH4 peptide on the IP 3R1 was related to the distinctive α-helical conformation of the BH4 domain peptide. We therefore designed a peptide with two glycine "hinges" replacing residues I14 and V15, of the wild-type Bcl-2-BH4 domain (Bcl-2-BH4-IV/GG. By comparing the structural and functional properties of the Bcl-2-BH4-IV/GG peptide with its native counterpart, we found that the variant contained reduced α-helicity, neither bound nor inhibited the IP 3R1 channel, and in turn lost its anti-apoptotic effect. Similar results were obtained with other substitutions in Bcl-2-BH4 that destabilized the α-helix with concomitant loss of IP3R inhibition. These results provide new insights for the further development of Bcl-2-BH4-derived peptides as specific inhibitors of the IP3R with significant pharmacological implications.

  11. Power-scaling of a Pr:YAlO.sub.3./sub. microchip laser operating at 747 nm wavelength at room temperature

    Czech Academy of Sciences Publication Activity Database

    Fibrich, Martin; Šulc, J.; Jelínková, H.

    2014-01-01

    Roč. 11, č. 10 (2014), s. 105802 ISSN 1612-2011 R&D Projects: GA MŠk ED1.1.00/02.0061 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061 Institutional support: RVO:68378271 Keywords : Pr:YAlO 3 * power scaling * diode pumping * InGaN laser diode * visible solid-state laser Subject RIV: BH - Optics, Masers, Laser s Impact factor: 2.458, year: 2014

  12. Plasma emission spectroscopy of solids irradiated by intense XUV pulses from a free electron laser

    Czech Academy of Sciences Publication Activity Database

    Dzelzainis, T.W.J.; Chalupský, Jaromír; Fajardo, M.; Fäustlin, R.; Heimann, P.A.; Hájková, Věra; Juha, Libor; Jurek, Karel; Khattak, F.Y.; Kozlová, Michaela; Krzywinski, J.; Lee, R. W.; Nagler, B.; Nelson, A.J.; Rosmej, F.B.; Soberierski, R.; Toleikis, S.; Tschentscher, T.; Vinko, S.M.; Wark, J. S.; Whitcher, T.; Riley, D.

    2010-01-01

    Roč. 6, č. 1 (2010), 109-112 ISSN 1574-1818 R&D Projects: GA MŠk LC510; GA MŠk(CZ) LC528; GA MŠk LA08024; GA AV ČR IAAX00100903 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z10100521 Keywords : XUV emission spectroscopy * free-electron laser * warm dense matter Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.206, year: 2010

  13. Creation and diagnosis of a solid-density plasma with an X-ray free-electron laser

    Czech Academy of Sciences Publication Activity Database

    Vinko, S.M.; Ciricosta, O.; Cho, B.I.; Engelhorn, K.; Chung, H.-K.; Brown, C.R.D.; Burian, Tomáš; Chalupský, Jaromír; Falcone, R.W.; Graves, C.; Hájková, Věra; Higginbotham, A.; Juha, Libor; Krzywinski, J.; Lee, H.J.; Messerschmidt, M.; Murphy, C. D.; Ping, Y.; Scherz, A.; Schlotter, W.; Toleikis, S.; Turner, J.J.; Vyšín, Luděk; Wang, T.; Wu, B.; Zastrau, U.; Zhu, D.; Lee, R. W.; Heimann, P.A.; Nagler, B.; Wark, J. S.

    2012-01-01

    Roč. 482, č. 7383 (2012), s. 59-63 ISSN 0028-0836 R&D Projects: GA AV ČR KAN300100702; GA MŠk LC510; GA ČR(CZ) GAP108/11/1312; GA MŠk LA08024; GA AV ČR IAAX00100903; GA MŠk(CZ) ME10046 Institutional research plan: CEZ:AV0Z10100523 Keywords : x-ray laser * free-electron laser * hot dense plasma s * astrophysics * inertial fusion Subject RIV: BH - Optics, Masers, Lasers Impact factor: 38.597, year: 2012

  14. kW-class picosecond thin-disc prepulse laser Perla for efficient EUV generation

    Czech Academy of Sciences Publication Activity Database

    Endo, Akira; Smrž, Martin; Mužík, Jiří; Novák, Ondřej; Chyla, Michal; Mocek, Tomáš

    2017-01-01

    Roč. 16, č. 4 (2017), s. 1-6, č. článku 041011. ISSN 1932-5150 R&D Projects: GA MŠk LO1602; GA ČR GA16-12960S; GA MŠk LM2015086 EU Projects: European Commission(XE) 739573 - HiLASE CoE Grant - others:OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674 Institutional support: RVO:68378271 Keywords : EUV source * laser produced plasma * FEL * prepulse * thin-disc laser Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.350, year: 2016

  15. Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

    Science.gov (United States)

    Ramesh, R.; Chan, W. K.; Wilkens, B.; Gilchrist, H.; Sands, T.; Tarascon, J. M.; Keramidas, V. G.; Fork, D. K.; Lee, J.; Safari, A.

    1992-09-01

    Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y-Ba-Cu-O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria-stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a- and c-axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.

  16. XUV radiation from gaseous nitrogen and argon target laser plasmas

    Czech Academy of Sciences Publication Activity Database

    Vrba, Pavel; Vrbová, M.; Brůža, P.; Pánek, D.; Krejčí, F.; Kroupa, M.; Jakůbek, J.

    2012-01-01

    Roč. 370, č. 1 (2012), s. 012049 ISSN 1742-6588. [Latin American Workshop on Plasma Physics (LAWPP 2011)/14/. Mar del Plata, 20.11.2011-25.11.2011] R&D Projects: GA MŠk LA08024; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z20430508 Keywords : Laser plasma source of XUV radiation in water window range * RHMD Z* engine code Subject RIV: BH - Optics, Masers, Lasers http://iopscience.iop.org/1742-6596/370/1/012049/pdf/1742-6596_370_1_012049.pdf

  17. Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

    Science.gov (United States)

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2014-01-21

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

  18. Detection of interference phase by digital computation of quadrature signals in homodyne laser interferometry

    Czech Academy of Sciences Publication Activity Database

    Řeřucha, Šimon; Buchta, Zdeněk; Šarbort, Martin; Lazar, Josef; Číp, Ondřej

    2012-01-01

    Roč. 12, č. 10 (2012), s. 14095-14112 ISSN 1424-8220 R&D Projects: GA ČR GAP102/10/1813; GA MŠk ED0017/01/01; GA MPO FR-TI2/705; GA MPO FR-TI1/241; GA MŠk EE2.3.30.0054 Institutional support: RVO:68081731 Keywords : digital signal processing * homodyne detection * laser interferometry * optical metrology Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.953, year: 2012

  19. Tunable band gaps in graphene/GaN van der Waals heterostructures

    International Nuclear Information System (INIS)

    Huang, Le; Kang, Jun; Li, Yan; Li, Jingbo; Yue, Qu

    2014-01-01

    Van der Waals (vdW) heterostructures consisting of graphene and other two-dimensional materials provide good opportunities for achieving desired electronic and optoelectronic properties. Here, we focus on vdW heterostructures composed of graphene and gallium nitride (GaN). Using density functional theory, we perform a systematic study on the structural and electronic properties of heterostructures consisting of graphene and GaN. Small band gaps are opened up at or near the Γ point of the Brillouin zone for all of the heterostructures. We also investigate the effect of the stacking sequence and electric fields on their electronic properties. Our results show that the tunability of the band gap is sensitive to the stacking sequence in bilayer-graphene-based heterostructures. In particular, in the case of graphene/graphene/GaN, a band gap of up to 334 meV is obtained under a perpendicular electric field. The band gap of bilayer graphene between GaN sheets (GaN/graphene/graphene/GaN) shows similar tunability, and increases to 217 meV with the perpendicular electric field reaching 0.8 V Å  − 1 . (paper)

  20. Exchange bias coupling in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BiFeO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Huijben, Mark; Chu, Ying-Hao; Martin, Lane W.; Seidel, Jan; Balke, Nina; Gajek, Martin; Yang, Chan-Ho; Yu, Pu; Holcomb, Micky; Ramesh, Ramamoorthy [Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley (United States)

    2008-07-01

    Heterostructures based on perovskite transition-metal oxides have attracted much attention because of the possibility of tuning the magnetic and electronic properties of thin films through interface effects such as exchange interactions, charge transfer, and epitaxial strain. The development and understanding of multiferroic materials such as BiFeO{sub 3}, have piqued the interest with the promise of coupling between order parameters such as ferroelectricity and antiferromagnetism. In this study we investigate the magnetic properties in ferromagnetic-antiferromagnetic multiferroic heterostructures by using atomic scale controlled growth through laser-MBE in combination with real-time RHEED monitoring. We will show the controlled coupling at the interfaces in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BiFeO{sub 3} heterostructures. This coupling behavior is investigated by structural measurements, such as X-ray reciprocal space mapping to clarify strained states, and magnetic measurements to gain a deeper fundamental understanding of the interactions at these interfaces. The interface coupling displays a strong enhancement in the coercivity of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} layer and a large shift in the magnetization hysteresis loops, indicating the existence of exchange bias coupling.

  1. Surface- and interface-engineered heterostructures for solar hydrogen generation

    Science.gov (United States)

    Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

    2018-04-01

    Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

  2. Chemical changes in carbon Nanotube-Nickel/Nickel Oxide Core/Shell nanoparticle heterostructures treated at high temperatures

    International Nuclear Information System (INIS)

    Chopra, Nitin; McWhinney, Hylton G.; Shi Wenwu

    2011-01-01

    Heterostructures composed of carbon nanotube (CNT) coated with Ni/NiO core/shell nanoparticles (denoted as CNC heterostructures) were synthesized in a wet-chemistry and single-step synthesis route involving direct nucleation of nanoparticles on CNT surface. Two different aspects of CNC heterostructures were studied here. First, it was observed that the nanoparticle coatings were more uniform on the as-produced and non-purified CNTs compared to purified (or acid treated) CNTs. These heterostructures were characterized using electron microscopy, Raman spectroscopy, and energy dispersive spectroscopy. Second, thermal stability of CNC heterostructures was studied by annealing them in N 2 -rich (O 2 -lean) environment between 125 and 750 deg. C for 1 h. A detailed X-ray photoelectron spectroscopy and Raman spectroscopy analysis was performed to evaluate the effects of annealing temperatures on chemical composition, phases, and stability of the heterostructures. It was observed that the CNTs present in the heterostructures completely decomposed and core Ni nanoparticle oxidized significantly between 600 and 750 deg. C. - Research Highlights: → Heterostructures composed of CNTs coated with Ni/NiO core/shell nanoparticles. → Poor nanoparticle coverage on purified CNT surface compared to non-purified CNTs. → CNTs in heterostructures decompose between 600 and 750 deg. C in N 2 -rich atmosphere. → Metallic species in heterostructures were oxidized at higher temperatures.

  3. High current, high energy proton beams accelerated by a sub-nanosecond laser

    Czech Academy of Sciences Publication Activity Database

    Margarone, Daniele; Krása, Josef; Picciotto, A.; Torrisi, L.; Láska, Leoš; Velyhan, Andriy; Prokůpek, Jan; Ryc, L.; Parys, P.; Ullschmied, Jiří; Rus, Bedřich

    2011-01-01

    Roč. 653, č. 1 (2011), s. 159-163 ISSN 0168-9002 R&D Projects: GA ČR(CZ) GAP205/11/1165; GA AV ČR IAA100100715; GA MŠk(CZ) 7E09092 EU Projects: European Commission(XE) 212105 - ELI-PP Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser-acceleration * proton beam * high ion current * time -of-flight * proton energy distribution Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.207, year: 2011

  4. Li2 NH-LiBH4 : a Complex Hydride with Near Ambient Hydrogen Adsorption and Fast Lithium Ion Conduction.

    Science.gov (United States)

    Wang, Han; Cao, Hujun; Zhang, Weijin; Chen, Jian; Wu, Hui; Pistidda, Claudio; Ju, Xiaohua; Zhou, Wei; Wu, Guotao; Etter, Martin; Klassen, Thomas; Dornheim, Martin; Chen, Ping

    2018-01-26

    Complex hydrides have played important roles in energy storage area. Here a complex hydride made of Li 2 NH and LiBH 4 was synthesized, which has a structure tentatively indexed using an orthorhombic cell with a space group of Pna2 1 and lattice parameters of a=10.121, b=6.997, and c=11.457 Å. The Li 2 NH-LiBH 4 sample (in a molar ratio of 1:1) shows excellent hydrogenation kinetics, starting to absorb H 2 at 310 K, which is more than 100 K lower than that of pristine Li 2 NH. Furthermore, the Li + ion conductivity of the Li 2 NH-LiBH 4 sample is about 1.0×10 -5  S cm -1 at room temperature, and is higher than that of either Li 2 NH or LiBH 4 at 373 K. Those unique properties of the Li 2 NH-LiBH 4 complex render it a promising candidate for hydrogen storage and Li ion conduction. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Dehydriding and re-hydriding properties of high-energy ball milled LiBH{sub 4}+MgH{sub 2} mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Crosby, Kyle; Shaw, Leon L. [Department of Chemical, Materials and Biomolecular Engineering, University of Connecticut, 97 North Eagleville Road, U-3136, Storrs, CT 06269 (United States)

    2010-07-15

    Here we report the first investigation of the dehydriding and re-hydriding properties of 2LiBH{sub 4} + MgH{sub 2} mixtures in the solid state. Such a study is made possible by high-energy ball milling of 2LiBH{sub 4}+MgH{sub 2} mixtures at liquid nitrogen temperature with the addition of graphite. The 2LiBH{sub 4}+MgH{sub 2} mixture ball milled under this condition exhibits a 5-fold increase in the released hydrogen at 265 C when compared with ineffectively ball milled counterparts. Furthermore, both LiBH{sub 4} and MgH{sub 2} contribute to hydrogen release in the solid state. The isothermal dehydriding/re-hydriding cycles at 265 C reveal that re-hydriding is dominated by re-hydriding of Mg. These unusual phenomena are explained based on the formation of nanocrystalline and amorphous phases, the increased defect concentration in crystalline compounds, and possible catalytic effects of Mg,MgH{sub 2} and LiBH{sub 4} on their dehydriding and re-hydriding properties. (author)

  6. Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

    Science.gov (United States)

    Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

    2018-06-01

    Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

  7. Strong interlayer coupling in phosphorene/graphene van der Waals heterostructure: A first-principles investigation

    Science.gov (United States)

    Hu, Xue-Rong; Zheng, Ji-Ming; Ren, Zhao-Yu

    2018-04-01

    Based on first-principles calculations within the framework of density functional theory, we study the electronic properties of phosphorene/graphene heterostructures. Band gaps with different sizes are observed in the heterostructure, and charges transfer from graphene to phosphorene, causing the Fermi level of the heterostructure to shift downward with respect to the Dirac point of graphene. Significantly, strong coupling between two layers is discovered in the band spectrum even though it has a van der Waals heterostructure. A tight-binding Hamiltonian model is used to reveal that the resonance of the Bloch states between the phosphorene and graphene layers in certain K points combines with the symmetry matching between band states, which explains the reason for the strong coupling in such heterostructures. This work may enhance the understanding of interlayer interaction and composition mechanisms in van der Waals heterostructures consisting of two-dimensional layered nanomaterials, and may indicate potential reference information for nanoelectronic and optoelectronic applications.

  8. Proximity effects in topological insulator heterostructures

    International Nuclear Information System (INIS)

    Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

    2013-01-01

    Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

  9. Joule-class 940-nm diode laser bars for millisecond pulse applications

    Czech Academy of Sciences Publication Activity Database

    Crump, P.; Frevert, C.; Ginolas, A.; Knigge, S.; Maassdorf, A.; Lotz, J.; Fassbender, W.; Neukum, J.; Körner, J.; Töpfer, T.; Pranovich, Alina; Divoký, Martin; Lucianetti, Antonio; Mocek, Tomáš; Ertel, K.; De Vido, M.; Erbert, G.; Traenkle, G.

    2015-01-01

    Roč. 27, č. 15 (2015), s. 1663-1666 ISSN 1041-1135 R&D Projects: GA MŠk EE2.3.20.0143; GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.30.0057 Grant - others:OP VK 6(XE) CZ.1.07/2.3.00/20.0143; HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : semiconductor laser arrays * power conversion * pulse power systems * pumps * YAG lasers * cryogenics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.945, year: 2015

  10. High performance 1.3 μm buried crescent lasers and LEDs for fiber optic links

    International Nuclear Information System (INIS)

    Fu, R.J.; Chan, E.Y.; Hong, C.S.

    1989-01-01

    Self-aligned buried crescent heterostructure (BCH) semiconductor lasers and LEDs have been successfully developed as superb light sources for fiber optic communications. The fabrication and performance characteristics of these InGaAsP/InP lasers and LEDs are described. For lasers, the threshold currents as low as 10 mA and differential quantum efficiencies as high as 50% are achieved. For LEDs, the output powers at 150 mA are higher than 1 mW. Good far field patterns are obtained in both the LEDs and lasers. Measured I-V, L-I, spectrum and far field patterns are presented

  11. High-contrast, high-intensity petawatt-class laser and applications

    Czech Academy of Sciences Publication Activity Database

    Kiriyama, H.; Mori, M.; Pirozhkov, A.S.; Ogura, K.; Sagisaka, A.; Kon, A.; Esirkepov, T.Z.; Hayashi, Y.; Kotaki, H.; Kanasaki, M.; Sakaki, H.; Fukuda, Y.; Koga, J.; Nishiuchi, M.; Kando, M.; Bulanov, S.; Kondo, K.; Bolton, P.R.; Slezák, Ondřej; Vojna, David; Sawicka-Chyla, Magdalena; Jambunathan, Venkatesan; Lucianetti, Antonio; Mocek, Tomáš

    2015-01-01

    Roč. 21, č. 1 (2015), s. 1601118 ISSN 0018-9197 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143; GA MŠk EE2.3.30.0057 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : petawatt laser * applications * Ti:saphire * ASE Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.843, year: 2015

  12. M = Mo, W; X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun

    2018-04-16

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

  13. BWR - Spent Fuel Transport and Storage with the TNTM9/4 and TNTM24BH Casks

    International Nuclear Information System (INIS)

    Wattez, L.; Marguerat, Y.; Hoesli, C.

    2006-01-01

    The Swiss Nuclear Utilities have started in 2001 to store spent fuel in dry metallic dual-purpose casks at ZWILAG, the Swiss interim storage facility. BKW FMB Energy Ltd., the Muehleberg Nuclear Power Plant owner, is involved in this process and has elected to store its BWR spent fuel in a new high capacity dual-purpose cask, the TNeTeM24BH from the COGEMA Logistics/TRANSNUCLEAR TN TM 24 family. The Muehleberg BWR spent fuels are transported by road in a medium size shuttle transport cask and then transferred to a heavy transport/storage cask (dry transfer) in the hot cell of ZWILAG site. For that purpose, COGEMA Logistics designed and supplied: - Two shuttle casks, TN TM 9/4, mainly devoted to transport of spent fuel from Muehleberg NPP to ZWILAG. Licensed according to IAEA 1996, the TN TM 9/4 is a 40 ton transport cask, for 7 BWR high bum-up spent fuel assemblies. - A series of new high capacity dual-purpose casks, TN TM 24BH, holding 69 BWR spent fuels. Two transport campaigns took place in 2003 and 2004. For each campaign, ten TN TM 9/4 round trips are performed, and one TN TM 24BH is loaded. 5 additional TN TM 24BH are being manufactured for BKW, and the next transport campaigns are scheduled from 2006. The TN TM 24BH high capacity dual purpose cask and the TN TM 9/4 transport cask characteristics and capabilities will then be detailed. (authors)

  14. THE LICK AGN MONITORING PROJECT: THE M BH-σ* RELATION FOR REVERBERATION-MAPPED ACTIVE GALAXIES

    International Nuclear Information System (INIS)

    Woo, Jong-Hak; Treu, Tommaso; Bennert, Vardha N.; Barth, Aaron J.; Walsh, Jonelle L.; Bentz, Misty C.; Wright, Shelley A.; Filippenko, Alexei V.; Li, Weidong; Martini, Paul; Canalizo, Gabriela; Gates, Elinor; Greene, Jenny; Malkan, Matthew A.; Stern, Daniel; Minezaki, Takeo

    2010-01-01

    To investigate the black hole mass versus stellar velocity dispersion (M BH -σ * ) relation of active galaxies, we measured the velocity dispersions of a sample of local Seyfert 1 galaxies, for which we have recently determined black hole masses using reverberation mapping. For most objects, stellar velocity dispersions were measured from high signal-to-noise ratio optical spectra centered on the Ca II triplet region (∼8500 A), obtained at the Keck, Palomar, and Lick Observatories. For two objects, in which the Ca II triplet region was contaminated by nuclear emission, the measurement was based on high-quality H-band spectra obtained with the OH-Suppressing Infrared Imaging Spectrograph at the Keck-II telescope. Combining our new measurements with data from the literature, we assemble a sample of 24 active galaxies with stellar velocity dispersions and reverberation-based black hole mass measurements in the range of black hole mass 10 6 BH /M sun 9 . We use this sample to obtain reverberation-mapping constraints on the slope and intrinsic scatter of the M BH -σ * relation of active galaxies. Assuming a constant virial coefficient f for the reverberation-mapping black hole masses, we find a slope β = 3.55 ± 0.60 and the intrinsic scatter σ int = 0.43 ± 0.08 dex in the relation log(M BH /M sun ) = α + β log(σ * /200 km s -1 ), which are consistent with those found for quiescent galaxies. We derive an updated value of the virial coefficient f by finding the value which places the reverberation masses in best agreement with the M BH -σ * relation of quiescent galaxies; using the quiescent M BH -σ * relation determined by Gueltekin et al., we find log f = 0.72 +0.09 -0.10 with an intrinsic scatter of 0.44 ± 0.07 dex. No strong correlations between f and parameters connected to the physics of accretion (such as the Eddington ratio or line-shape measurements) are found. The uncertainty of the virial coefficient remains one of the main sources of the

  15. All-solid-state lithium-sulfur battery based on a nanoconfined LiBH4 electrolyte

    DEFF Research Database (Denmark)

    Das, Supti; Ngene, Peter; Norby, Poul

    2016-01-01

    In this work we characterize all-solid-state lithium-sulfur batteries based on nano-confined LiBH4 in mesoporous silica as solid electrolytes. The nano-confined LiBH4 has fast ionic lithium conductivity at room temperature, 0.1 mScm-1, negligible electronic conductivity and its cationic transport...... number (t+ = 0.96), close to unity, demonstrates a purely cationic conductor. The electrolyte has an excellent stability against lithium metal. The behavior of the batteries is studied by cyclic voltammetry and repeated charge/discharge cycles in galvanostatic conditions. The batteries show very good...

  16. Self-focusing in processes of laser generation of highly-charged and high-energy heavy ions

    Czech Academy of Sciences Publication Activity Database

    Láska, Leoš; Jungwirth, Karel; Krása, Josef; Krouský, Eduard; Pfeifer, Miroslav; Rohlena, Karel; Ullschmied, Jiří; Badziak, J.; Parys, P.; Wolowski, J.; Gammino, S.; Torrisi, L.; Boody, F. P.

    2006-01-01

    Roč. 24, - (2006), s. 175-179 ISSN 0263-0346 R&D Projects: GA AV ČR IAA1010405; GA AV ČR KSK2043105 Grant - others:EU(XE) HPRI-1999-CT-00053; EU(XE) PALS/005; EU(XE) PALS/006 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : laser-plasma interactions * non-linear processes * self-focusing Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.958, year: 2006

  17. Photometry of the SW Sextantis-type nova-like BH Lyncis in high state

    Science.gov (United States)

    Stanishev, V.; Kraicheva, Z.; Genkov, V.

    2006-08-01

    Aims.We present a photometric study of the deeply eclipsing SW Sex-type nova-like cataclysmic variable star BH Lyn. Methods: .Time-resolved V-band CCD photometry was obtained for seven nights between 1999 and 2004. Results: .We determined 11 new eclipse timings of BH Lyn and derived a refined orbital ephemeris with an orbital period of 0.155875577(14) °. During the observations, BH Lyn was in high-state with V≃15.5 mag. The star presents ~1.5 mag deep eclipses with mean full-width at half-flux of 0.0683(±0.0054)P_orb. The eclipse shape is highly variable, even changing form cycle to cycle. This is most likely due to accretion disc surface brightness distribution variations, most probably caused by strong flickering. Time-dependent accretion disc self-occultation or variations of the hot spot(s) intensity are also possible explanations. Negative superhumps with period of ˜0.145 ° are detected in two long runs in 2000. A possible connection between SW Sex and negative superhump phenomena through the presence of tilted accretion disc is discussed, and a way to observationally test this is suggested.

  18. Studies of biological effects of fluoride stannous and UV short in Escherichia coli BH110

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira da C, R., E-mail: rogercosta1@hotmail.com [Federal Institute of Education, Science and Technology of Goias, Campus Uruacu, Rua Formosa Qd 28 e 29, Loteamento Santana, 76400-000 Uruacu, Goias (Brazil)

    2015-10-15

    Full text: The amount of UV rays on the Earth's surface has increased due to depletion of the ozone layer, and this has worried society, since these radiation although not considered ionizing can cause damage to biological membrane and especially to DNA. The DNA has cell repair mechanisms that can work in lesions caused by electromagnetic radiation such as ultraviolet -short (UV C)and agents causing oxidative stress, such as tin salts. Among the repair mechanisms can highlight the adaptive repair, which consists of smaller doses to cells pre-exposure of an oxidizing agent, and when these cells are exposed to larger doses of the agent even if there is a reduction in mortality rate which leads to complete that repair mechanisms are activated in the pre-exposure reducing cell mortality. Several publications have shown the genotoxic effects of stannous salts such as stannous fluoride (SnF{sub 2}), which shows the importance of the study, since these salts are widely used in industry as components in toothpastes and mouthwashes. So we check whether pretreatment with UV C is able to induce adaptive response reducing the cytotoxic effects caused by exposure of the strains to SnF{sub 2}. We use a strain of Escherichia coli BH110 (BH110 E. coli) deficient in three genes (fpg, nfo and xth) involved in the excision repair bases. To verify the induction of adaptive response to strain BH110 was exposed to various doses of UV C and then treated with SnF{sub 2} a concentration of 110 u M. Our results showed that the LD10 of strain BH110 is 20 J/m{sup 2} and pre-treatment with UV C does not seem to induce adaptive repair in BH110 strains. (Author)

  19. Modification of transparent materials with ultrashort laser pulses: what is energetically and mechanically meaningful?

    Czech Academy of Sciences Publication Activity Database

    Bulgakova, Nadezhda M.; Zhukov, V.P.; Sonina, S.V.; Meshcheryakov, Y.P.

    2015-01-01

    Roč. 118, č. 23 (2015), 1-17, č. článku 233108. ISSN 0021-8979 R&D Projects: GA MŠk ED2.1.00/01.0027 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027 Institutional support: RVO:68378271 Keywords : bulk fused-silica * femtosecond-laser * wave-guides * structural modifications * induced nanogratings * repetition rate * amorphous sio2 * light-pulses * glass Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.101, year: 2015

  20. Wavelength dependence of picosecond laser-induced periodic surface structures on copper

    Czech Academy of Sciences Publication Activity Database

    Maragkaki, S.; Derrien, Thibault; Levy, Yoann; Bulgakova, Nadezhda M.; Ostendorf, A.; Gurevich, E.L.

    2017-01-01

    Roč. 417, Sep (2017), s. 88-92 ISSN 0169-4332 R&D Projects: GA MŠk LO1602; GA MŠk EF15_003/0000445; GA MŠk LM2015086 EU Projects: European Commission(XE) 657424 - QuantumLaP Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445 Institutional support: RVO:68378271 Keywords : irradiation * ablation * silicon * pulses * damage Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 3.387, year: 2016

  1. X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun; Schwingenschlö gl, Udo

    2018-01-01

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence

  2. Mg{sub x}Mn{sub (1-x)}(BH{sub 4}){sub 2} (x = 0-0.8), a cation solid solution in a bimetallic borohydride

    Energy Technology Data Exchange (ETDEWEB)

    Cerny, Radovan, E-mail: radovan.cerny@unige.ch [Laboratory of Crystallography, University of Geneva, 1211 Geneva (Switzerland); Penin, Nicolas [Laboratory of Crystallography, University of Geneva, 1211 Geneva (Switzerland); CNRS, Universite de Bordeaux 1, ICMCB, 87 Avenue du Docteur Albert Schweitzer, F-33608 Pessac Cedex (France); D' Anna, Vincenza; Hagemann, Hans [Department of Physical Chemistry, University of Geneva, 1211 Geneva (Switzerland); Durand, Etienne [CNRS, Universite de Bordeaux 1, ICMCB, 87 Avenue du Docteur Albert Schweitzer, F-33608 Pessac Cedex (France); Ruzicka, Jakub [Charles University, Faculty of Science, Department of Inorganic Chemistry, Hlavova 2030, 128 40, Prague 2 (Czech Republic)

    2011-08-15

    Highlights: {yields} The magnesium and manganese borohydrides form a solid solution Mg{sub x}Mn{sub (1-x)}(BH{sub 4}){sub 2} (x = 0-0.8) which conserves the trigonal structure of Mn{sub (}(BH{sub 4}){sub 2}. {yields} Coexistence of both trigonal and hexagonal borohydrides occurs within nominal composition ranging from x{sub Mg} = 0.8-0.9. {yields} The decomposition temperature of trigonal Mg{sub x}Mn{sub (1-x)}(BH{sub 4}){sub 2} (x = 0-0.8) does not vary significantly with magnesium content (433-453 K). {yields} The desorbed gas contains mostly hydrogen and 3-7.5 mol.% of diborane B{sub 2}H{sub 6}. - Abstract: A solid solution of magnesium and manganese borohydrides was studied by in situ synchrotron radiation X-ray powder diffraction and infrared spectroscopy. A combination of thermogravimetry, mass and infrared spectroscopy, and atomic emission spectroscopy were applied to clarify the thermal gas desorption of pure Mn(BH{sub 4}){sub 2} and a solid solution of composition Mg{sub 0.5}Mn{sub 0.5}(BH{sub 4}){sub 2}. Mg{sub x}Mn{sub (1-x)}(BH{sub 4}){sub 2} (x = 0-0.8) conserves the trigonal structure of Mn(BH{sub 4}){sub 2} at room temperature. Manganese is dissolved in the hexagonal structure of {alpha}-Mg(BH{sub 4}){sub 2}, with the upper solubility limit not exceeding 10 mol.% at room temperature. There exists a two-phase region of trigonal and hexagonal borohydrides within the compositional range x = 0.8-0.9 at room temperature. Infrared spectra show splitting of various vibrational modes, indicating the presence of two cations in the trigonal Mg{sub x}Mn{sub (1-x)}(BH{sub 4}){sub 2} solid solutions, as well as the appearance of a second phase, hexagonal {alpha}-Mg(BH{sub 4}){sub 2}, at higher magnesium contents. All vibrational frequencies are shifted to higher values with increasing magnesium content. The decomposition temperature of the trigonal Mg{sub x}Mn{sub (1-x)}(BH{sub 4}){sub 2} (x = 0-0.8) does not vary significantly as a function of the magnesium

  3. Iodine photodissociation laser SOFIA with MOPO-HF as a solid-state oscillator

    Czech Academy of Sciences Publication Activity Database

    Dostál, Jan; Turčičová, Hana; Králiková, Božena; Král, Lukáš; Huynh, J.

    2009-01-01

    Roč. 97, č. 3 (2009), 687-694 ISSN 0946-2171 R&D Projects: GA ČR GA202/06/0814; GA MŠk(CZ) LC528; GA MŠk LN00A100 Grant - others:EC - 6FP LASERLAB-EUROPE(XE) RII3-CT-2003-506350 Program:FP6 Institutional research plan: CEZ:AV0Z10100523 Keywords : Iodine photodissociation laser * optical parametric amplification * chirped pulse * optical synchronization * stabilization of wavelength and pointing Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.992, year: 2009

  4. Dehydrogenation of Surface-Oxidized Mixtures of 2LiBH4 + Al/Additives (TiF3 or CeO2

    Directory of Open Access Journals (Sweden)

    Juan Luis Carrillo-Bucio

    2017-11-01

    Full Text Available Research for suitable hydrogen storage materials is an important ongoing subject. LiBH4–Al mixtures could be attractive; however, several issues must be solved. Here, the dehydrogenation reactions of surface-oxidized 2LiBH4 + Al mixtures plus an additive (TiF3 or CeO2 at two different pressures are presented. The mixtures were produced by mechanical milling and handled under welding-grade argon. The dehydrogenation reactions were studied by means of temperature programmed desorption (TPD at 400 °C and at 3 or 5 bar initial hydrogen pressure. The milled and dehydrogenated materials were characterized by scanning electron microscopy (SEM, X-ray diffraction (XRD, and Fourier transformed infrared spectroscopy (FT-IR The additives and the surface oxidation, promoted by the impurities in the welding-grade argon, induced a reduction in the dehydrogenation temperature and an increase in the reaction kinetics, as compared to pure (reported LiBH4. The dehydrogenation reactions were observed to take place in two main steps, with onsets at 100 °C and 200–300 °C. The maximum released hydrogen was 9.3 wt % in the 2LiBH4 + Al/TiF3 material, and 7.9 wt % in the 2LiBH4 + Al/CeO2 material. Formation of CeB6 after dehydrogenation of 2LiBH4 + Al/CeO2 was confirmed.

  5. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Science.gov (United States)

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-05-09

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  6. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  7. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu A [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  8. Escher-like quasiperiodic heterostructures

    International Nuclear Information System (INIS)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L; Costa, A F

    2009-01-01

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  9. Escher-like quasiperiodic heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L [Departamento de Optica, Facultad de Fisica, Universidad Complutense, 28040 Madrid (Spain); Costa, A F [Departamento de Matematicas Fundamentales, Facultad de Ciencias, Universidad Nacional de Educacion a Distancia, Senda del Rey 9, 28040 Madrid (Spain)

    2009-05-15

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  10. Terahertz luminescence of GaAs based on heterostructures with quantum wells at optical excitation of donors

    International Nuclear Information System (INIS)

    Bekin, N.A.; Zhukavin, R.Kh.; Kovalevskij, K.A.; Pavlov, S.G.; Shastin, V.N.; Zvonkov, B.N.; Uskova, E.A.

    2005-01-01

    Terahertz spontaneous emission (∼ 3-3.5 THz) based on 2D-continuum-shallow donor (Si) states transitions has been investigated from both GaAs/InGaAs:Si and GaAs/InGaAsP:Si selectively doped heterostructures under CO 2 laser excitation at the liquid helium temperature. It is shown that the population inversion and the amplification with the coefficient up to 100-300 cm -1 per active layer can be realized for the planar doping level N D ≅ 10 11 cm -2 in multilayer structures with 50 periods of quantum wells under the pump flux density 10 23 quant/cm 2 s [ru

  11. Improved metabolic control in tetrahydrobiopterin (BH4), responsive phenylketonuria with sapropterin administered in two divided doses vs. a single daily dose.

    Science.gov (United States)

    Kör, Deniz; Yılmaz, Berna Şeker; Bulut, Fatma Derya; Ceylaner, Serdar; Mungan, Neslihan Önenli

    2017-07-26

    Phenylketonuria (PKU) often requires a lifelong phenylalanine (Phe)-restricted diet. Introduction of 6R-tetrahydrobiopterin (BH4) has made a huge difference in the diets of patients with PKU. BH4 is the co-factor of the enzyme phenylalanine hydroxylase (PAH) and improves PAH activity and, thus, Phe tolerance in the diet. A limited number of published studies suggest a pharmacodynamic profile of BH4 more suitable to be administered in divided daily doses. After a 72-h BH4 loading test, sapropterin was initiated in 50 responsive patients. This case-control study was conducted by administering the same daily dose of sapropterin in group 1 (n=24) as a customary single dose or in two divided doses in group 2 (n=26) over 1 year. Mean daily consumption of Phe increased significantly after the first year of BH4 treatment in group 2 compared to group 1 (p<0.05). At the end of the first year of treatment with BH4, another dramatic difference observed between the two groups was the ability to transition to a Phe-free diet. Eight patients from group 2 and two from group 1 could quit dietary restriction. When given in two divided daily doses, BH4 was more efficacious than a single daily dose in increasing daily Phe consumption, Phe tolerance and the ability to transition to a Phe-unrestricted diet at the end of the first year of treatment.

  12. Laser source for dimensional metrology: investigation of an iodine stabilized system based on narrow linewidth 633 nm DBR diode

    Czech Academy of Sciences Publication Activity Database

    Řeřucha, Šimon; Yacoot, A.; Pham, Minh Tuan; Čížek, Martin; Hucl, Václav; Lazar, Josef; Číp, Ondřej

    2017-01-01

    Roč. 28, č. 4 (2017), s. 1-11, č. článku 045204. ISSN 0957-0233 R&D Projects: GA ČR GB14-36681G; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01; GA TA ČR TE01020233 Institutional support: RVO:68081731 Keywords : optical metrology * DBR laser diode * frequency stabilization * laser interferometry * dimensional metrology * iodine stabilization * displacement measurement Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.585, year: 2016

  13. Graphene diamond-like carbon films heterostructure

    International Nuclear Information System (INIS)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-01-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  14. Graphene-Nanodiamond Heterostructures and their application to High Current Devices

    Science.gov (United States)

    Zhao, Fang; Vrajitoarea, Andrei; Jiang, Qi; Han, Xiaoyu; Chaudhary, Aysha; Welch, Joseph O.; Jackman, Richard B.

    2015-01-01

    Graphene on hydrogen terminated monolayer nanodiamond heterostructures provides a new way to improve carrier transport characteristics of the graphene, offering up to 60% improvement when compared with similar graphene on SiO2/Si substrates. These heterostructures offers excellent current-carrying abilities whilst offering the prospect of a fast, low cost and easy methodology for device applications. The use of ND monolayers is also a compatible technology for the support of large area graphene films. The nature of the C-H bonds between graphene and H-terminated NDs strongly influences the electronic character of the heterostructure, creating effective charge redistribution within the system. Field effect transistors (FETs) have been fabricated based on this novel herterostructure to demonstrate device characteristics and the potential of this approach. PMID:26350107

  15. Synthesis; characterization; and growth mechanism of Au/CdS heterostructured nanoflowers constructed with nanorods

    International Nuclear Information System (INIS)

    Kong Qingcheng; Wu Rong; Feng Xiumei; Ye Cui; Hu Guanqi; Hu Jianqiang; Chen Zhiwu

    2011-01-01

    Research highlights: → Well-defined and flower-shaped Au/CdS heterostructured nanocrystals were for the first time synthesized. → The Au-nanorod-induced hydrothermal strategy was for the first time used to fabricate metal/semiconductor heterostructured nanomaterials. → A preliminary crystal growing mechanism was also proposed for better understanding the growth process of other Au/semiconductor heterostructure nanocrystals. → The route devised here should also be extendable to fabricate other Au/semiconductor heterostructure nanomaterials. - Abstract: Gold/sulfide cadmium (Au/CdS) heterostructured nanocrystals with a flower-like shape were for the first time synthesized through an Au-nanorod-induced hydrothermal method. The Au/CdS nanoflowers possessed the average size of about 350 nm while the nanorods constructing the nanoflowers had the average diameter, length, and aspect ratio of approximately 50 nm, 100 nm, and 2, respectively. Our method suggested that Au-nanorods played a decisive role in the formation of Au/CdS heterostructured nanoflowers, demonstrated by high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), energy-dispersive X-ray spectroscopy (EDS), and UV-visible absorption spectroscopy measurements. A preliminary experiment model to reveal the Au/CdS growth mechanism was also put forward. The route devised here should be perhaps extendable to fabricate other Au/semiconductor heterostructured nanomaterials, and the Au/CdS nanoflowers may have potential applications in nanodevices, biolabels, and clinical detection and diagnosis.

  16. At the Perphery of the Amidohydrolase Superfamily: Bh0493 from Bacillus halodurans Catalyzes the Isomerization of D-Galacturonate to D-Tagaturonate

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen,T.; Brown, S.; Fedorov, A.; Fedorov, E.; Babbitt, P.; Almo, S.; Raushel, F.

    2008-01-01

    The amidohydrolase superfamily is a functionally diverse set of enzymes that catalyzes predominantly hydrolysis reactions involving sugars, nucleic acids, amino acids, and organophosphate esters. One of the most divergent members of this superfamily, uronate isomerase from Escherichia coli, catalyzes the isomerization of d-glucuronate to d-fructuronate and d-galacturonate to d-tagaturonate and is the only uronate isomerase in this organism. A gene encoding a putative uronate isomerase in Bacillus halodurans (Bh0705) was identified based on sequence similarity to uronate isomerases from other organisms. Kinetic evidence indicates that Bh0705 is relatively specific for the isomerization of d-glucuronate to d-fructuronate, confirming this functional assignment. Despite a low sequence identity to all other characterized uronate isomerases, phylogenetic and network-based analysis suggests that a second gene in this organism, Bh0493, is also a uronate isomerase, although it is an outlier in the group, with <20% sequence identity to any other characterized uronate isomerase from another species. The elucidation of the X-ray structure at a resolution of 2.0 Angstroms confirms that Bh0493 is a member of the amidohydrolase superfamily with conserved residues common to other members of the uronate isomerase family. Functional characterization of this protein shows that unlike Bh0705, Bh0493 can utilize both d-glucuronate and d-galacturonate as substrates. In B. halodurans, Bh0705 is found in an operon for the metabolism of d-glucuronate, whereas Bh0493 is in an operon for the metabolism of d-galacturonate. These results provide the first identification of a uronate isomerase that operates in a pathway distinct from that for d-glucuronate. While most organisms that contain this pathway have only one gene for a uronate isomerase, sequence analysis and operon context show that five other organisms also appear to have two genes and one organism appears to have three genes for

  17. Amorphous to crystalline phase transition in carbon induced by intense femtosecond x-ray free-electron laser pulses

    Czech Academy of Sciences Publication Activity Database

    Gaudin, J.; Peyrusse, O.; Chalupský, Jaromír; Toufarová, Martina; Vyšín, Luděk; Hájková, Věra; Sobierajski, R.; Burian, Tomáš; Dastjani-Farahani, S.; Graf, A.; Amati, M.; Gregoratti, L.; Hau-Riege, S.P.; Hoffmann, G.; Juha, Libor; Krzywinski, J.; London, R.A.; Moeller, S.; Sinn, H.; Schorb, S.; Störmer, M.; Tschentscher, T.; Vorlíček, Vladimír; Vu, H.; Bozek, J.; Bostedt, C.

    2012-01-01

    Roč. 86, č. 2 (2012), "024103-1"-"024103-7" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP108/11/1312; GA ČR GAP205/11/0571; GA ČR GAP208/10/2302; GA AV ČR IAAX00100903; GA MŠk EE.2.3.20.0087 Grant - others:OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087 Institutional research plan: CEZ:AV0Z10100523 Keywords : amorphous carbon * phase transition * graphitization * x-ray laser * free-electron laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.767, year: 2012

  18. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  19. Mechanism for formation of NaBH4 proposed as low-pressure ...

    Indian Academy of Sciences (India)

    hydrogen cell. It was determined that ... catalyst was studied in batch reactors. It was suggested ... NaBH4 is a non-reversible chemical hydride that was used ... Based on reaction chemistry, when hydrogen gas was to be stored in .... The solid–liquid.

  20. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  1. Investigations of collisionally pumped optical field ionization soft x-ray lasers

    Czech Academy of Sciences Publication Activity Database

    Sebban, S.; Upcraft, L. M.; Balcou, P.; Pittman, M.; Haroutunian, R.; Grillon, G.; Valentin, C.; Rousse, A.; Rousseau, J. P.; Notebaert, L.; Hulin, D.; Mocek, Tomáš; Rus, Bedřich; Ros, D.; Klisnick, A.; Carillon, A.; Jamelot, G.

    2003-01-01

    Roč. 20, č. 1 (2003), s. 195-202 ISSN 0740-3224 R&D Projects: GA MŠk LN00A100; GA AV ČR IAA1010014 Grant - others:HPRI(XE) CT-1999-000053 Institutional research plan: CEZ:AV0Z1010921 Keywords : femtosecond-pulse-driven * gases * recombination * amplification * generation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.122, year: 2003

  2. Insight to the Thermal Decomposition and Hydrogen Desorption Behaviors of NaNH2-NaBH4 Hydrogen Storage Composite.

    Science.gov (United States)

    Pei, Ziwei; Bai, Ying; Wang, Yue; Wu, Feng; Wu, Chuan

    2017-09-20

    The lightweight compound material NaNH 2 -NaBH 4 is regarded as a promising hydrogen storage composite due to the high hydrogen density. Mechanical ball milling was employed to synthesize the composite NaNH 2 -NaBH 4 (2/1 molar ratio), and the samples were investigated utilizing thermogravimetric-differential thermal analysis-mass spectroscopy (TG-DTA-MS), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR) analyses. The full-spectrum test (range of the ratio of mass to charge: 0-200) shows that the released gaseous species contain H 2 , NH 3 , B 2 H 6 , and N 2 in the heating process from room temperature to 400 °C, and possibly the impurity gas B 6 H 12 also exists. The TG/DTA analyses show that the composite NaNH 2 -NaBH 4 (2/1 molar ratio) is conductive to generate hydrogen so that the dehydrogenation process can be finished before 400 °C. Moreover, the thermal decomposition process from 200 to 400 °C involves two-step dehydrogenation reactions: (1) Na 3 (NH 2 ) 2 BH 4 hydride decomposes into Na 3 BN 2 and H 2 (200-350 °C); (2) remaining Na 3 (NH 2 ) 2 BH 4 reacts with NaBH 4 and Na 3 BN 2 , generating Na, BN, NH 3 , N 2 , and H 2 (350-400 °C). The better mechanism understanding of the thermal decomposition pathway lays a foundation for tailoring the hydrogen storage performance of the composite complex hydrides system.

  3. Generation of fast electrons in the external corona of laser plasma by the Raman scattering

    Czech Academy of Sciences Publication Activity Database

    Mašek, Martin; Rohlena, Karel

    2008-01-01

    Roč. 163, 4-6 (2008), 551-558 ISSN 1042-0150 R&D Projects: GA ČR GA202/05/2475 Institutional research plan: CEZ:AV0Z10100523 Keywords : Vlasov equation * stimulated Raman scattering * Raman cascade Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.415, year: 2008

  4. Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

    Science.gov (United States)

    Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

    2011-06-20

    We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

  5. Pulsed laser deposition of {CeO_2} and {Ce_{1-x}M_xO_2} (M = La, Zr): Application to insulating barrier in cuprate heterostructures

    Science.gov (United States)

    Berger, S.; Contour, J.-P.; Drouet, M.; Durand, O.; Khodan, A.; Michel, D.; Régi, F.-X.

    1998-03-01

    SrTiO_3 had been often tentatively used as an insulating barrier for HT superconductor/insulator heterostructures. Unfortunately, the deposition of SrTiO_3 on the YBa_2Cu_3O_7 inverse interface results in a poor epitaxial regrowth producing a high roughness dislocated titanate layer. Taking into account the good matching with YBa_2Cu_3O_7 and LaAlO_3, CeO_2 and Ce_{1-x}M_xO_2 (M = La, Zr), epitaxial layers were grown by pulsed laser deposition on LaAlO_3 substrates and introduced into YBa_2Cu_3O_7 based heterostructures as insulating barrier. After adjusting the growth parameters from RHEED oscillations, epitaxial growth is achieved, the oxide crystal axes being rotated by 45^circ from those of the substrate. The surface roughness of 250 nm thick films is very low with a rms value lower than 0.5 nm over 1;μ m^2. The YBa_2Cu_3O_7 layers of a YBa_2Cu_3O_7/CeO_2 /YBa_2Cu_3O_7 heterostructures grown using these optimized parameters show an independent resistive transition, when the thickness is larger than 25 nm, respectively at T_c_1 = 89.6;K and T_c_2 = 91.4;{K}. SrTiO3 est souvent utilisé comme barrière isolante dans des hétérostructures SIS de cuprates supraconducteurs, cependant les défauts générés lors de la croissance de ce titanate sur l'interface inverse de YBa2Cu3O7 conduisent à un matériau dont la qualité cristalline et les propriétés physiques sont médiocres. L'oxyde de cérium CeO2 est également une barrière isolante potentielle intéressante pour ces structures SIS basées sur YBa2Cu3O7 car cet oxyde cubique (a = 0,5411 nm, asqrt{2}/2 = 0,3825 nm) qui est peu désaccordé par rapport au plan ab du cuprate (Δ a/a = - 0,18 %, Δ b/a = 1,6 %) présente de plus un coefficient de dilatation thermique (10,6 × 10^{-6 circ}C^{-1}) très voisin de celui de YBa2Cu3O7 (13 × 10^{-6 circ}C^{-1}). Nous avons donc étudié l'épitaxie de CeO2 et des oxydes de type Ce{1-x}MxO2 (M = La, Zr) en ablation laser pulsée afin de définir des conditions de

  6. Decay of cystalline order and equilibration during the solid-to-plasma transition induced by 20-fs microfocused 92-eV free-electron-laser pulses

    Czech Academy of Sciences Publication Activity Database

    Galtier, E.; Rosmej, F.B.; Dzelzainis, T.; Riley, D.; Khattak, F.Y.; Heimann, P.; Lee, R. W.; Nelson, A.J.; Vinko, S.M.; Whitcher, T.; Wark, J. S.; Tschentscher, T.; Toleikis, S.; Fäustlin, R.R.; Sobierajski, R.; Jurek, M.; Juha, Libor; Chalupský, Jaromír; Hájková, Věra; Kozlová, Michaela; Krzywinski, J.; Nagler, B.

    2011-01-01

    Roč. 106, č. 16 (2011), "164801-1"-"164801-4" ISSN 0031-9007 R&D Projects: GA ČR GAP208/10/2302; GA MŠk LA08024; GA AV ČR IAAX00100903; GA MŠk(CZ) ME10046 Institutional research plan: CEZ:AV0Z10100523 Keywords : X-ray lasers * free-electron lasers * X-ray emission spectroscopy Subject RIV: BH - Optics, Masers, Lasers Impact factor: 7.370, year: 2011

  7. High-efficiency super capacitors based on hetero-structured α-MnO2 nanorods

    International Nuclear Information System (INIS)

    Ghouri, Zafar Khan; Shaheer Akhtar, M.; Zahoor, Awan; Barakat, Nasser A.M.; Han, Weidong; Park, Mira; Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye; Kim, Hak Yong

    2015-01-01

    Highlights: • Hetero-structured α-MnO 2 nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg −1 with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO 2 ) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO 2 nanorods. Supercapacitive performance of the hetero-structured α-MnO 2 nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO 2 hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO 6 ] structure yield a significantly high specific capacitance of 298 Fg −1 at 5 mV s −1 and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO 2 electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport

  8. Topological properties and correlation effects in oxide heterostructures

    Science.gov (United States)

    Okamoto, Satoshi

    2015-03-01

    Transition-metal oxides (TMOs) have long been one of the main subjects of material science because of their novel functionalities such as high-Tc superconductivity in cuprates and the colossal magnetoresistance effect in manganites. In recent years, we have seen tremendous developments in thin film growth techniques with the atomic precision, resulting in the discovery of a variety of electronic states in TMO heterostructures. These developments motivate us to explore the possibility of novel quantum states of matter such as topological insulators (TIs) in TMO heterostructures. In this talk, I will present our systematic theoretical study on unprecedented electronic states in TMO heterostructures. An extremely simple but crucial observation is that, when grown along the [111] crystallographic axis, bilayers of perovskite TMOs form buckled honeycomb lattices of transition-metal ions, similar to graphene. Thus, with the relativistic spin-orbit coupling and proper band filling, two-dimensional TI states or spin Hall insulators are anticipated. Based on tight-binding modeling and density-functional theory calculations, possible candidate materials for TIs are identified. By means of the dynamical-mean-field theory and a slave-boson mean field theory, correlation effects, characteristics of TMOs, are also examined. I will further discuss future prospects in topological phenomena in TMO heterostructures and related systems. The author thanks D. Xiao, W. Zhu, Y. Ran, R. Arita, Y. Nomura and N. Nagaosa for their fruitful discussions and collaboration. This work is supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division.

  9. Observation of repetitive bursts in emission of fast ions and neutrons in sub-nanosecond laser-solid experiments

    Czech Academy of Sciences Publication Activity Database

    Krása, Josef; Klír, D.; Velyhan, Andriy; Margarone, Daniele; Krouský, Eduard; Jungwirth, Karel; Skála, Jiří; Pfeifer, Miroslav; Kravárik, J.; Kubeš, P.; Řezáč, K.; Ullschmied, Jiří

    2013-01-01

    Roč. 31, č. 3 (2013), s. 395-401 ISSN 0263-0346 R&D Projects: GA MŠk EE2.3.20.0279; GA ČR GAP205/12/0454; GA MŠk LM2010014 Grant - others:OPVK 3 Laser Zdroj(XE) CZ.1.07/2.3.00/20.0279 Program:EE Institutional support: RVO:68378271 ; RVO:61389021 Keywords : laser-plasma interactions * neutron yield scaling * bursts in ion emission Subject RIV: BH - Optics, Masers, Lasers; BL - Plasma and Gas Discharge Physics (UFP-V) Impact factor: 1.701, year: 2013

  10. Characteristics of focused soft X-ray free-electron laser beam determined by ablation of organic molecular solids

    Czech Academy of Sciences Publication Activity Database

    Chalupský, Jaromír; Juha, Libor; Kuba, J.; Cihelka, Jaroslav; Hájková, Věra; Koptyaev, Sergey; Krása, Josef; Velyhan, Andriy; Bergh, M.; Caleman, C.; Hajdu, J.; Bionta, R.M.; Chapman, H.; Hau-Riege, S.P.; London, R.A.; Jurek, M.; Krzywinski, J.; Nietubyc, R.; Pelka, J. B.; Sobierajski, R.; Meyer-ter-Vehn, J.; Tronnier, A.; Sokolowski-Tinten, K.; Stojanovic, N.; Tiedtke, K.; Toleikis, S.; Tschentscher, T.; Wabnitz, H.; Zastrau, U.

    2007-01-01

    Roč. 15, č. 10 (2007), s. 6036-6042 ISSN 1094-4087 R&D Projects: GA MŠk 1P04LA235; GA MŠk LC510; GA MŠk(CZ) LC528; GA AV ČR KAN300100702 Grant - others:GA MŠk(CZ) 1K05026 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z40400503 Keywords : free-electron laser * soft X-rays * focusing * beam profile * ablation threshold * laser-matter interaction Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.709, year: 2007

  11. Dynamically tunable interface states in 1D graphene-embedded photonic crystal heterostructure

    Science.gov (United States)

    Huang, Zhao; Li, Shuaifeng; Liu, Xin; Zhao, Degang; Ye, Lei; Zhu, Xuefeng; Zang, Jianfeng

    2018-03-01

    Optical interface states exhibit promising applications in nonlinear photonics, low-threshold lasing, and surface-wave assisted sensing. However, the further application of interface states in configurable optics is hindered by their limited tunability. Here, we demonstrate a new approach to generate dynamically tunable and angle-resolved interface states using graphene-embedded photonic crystal (GPC) heterostructure device. By combining the GPC structure design with in situ electric doping of graphene, a continuously tunable interface state can be obtained and its tuning range is as wide as the full bandgap. Moreover, the exhibited tunable interface states offer a possibility to study the correspondence between space and time characteristics of light, which is beyond normal incident conditions. Our strategy provides a new way to design configurable devices with tunable optical states for various advanced optical applications such as beam splitter and dynamically tunable laser.

  12. Nano and micro structured targets to modulate the spatial profile of laser driven proton beams

    Czech Academy of Sciences Publication Activity Database

    Giuffrida, Lorenzo; Svensson, K.; Pšikal, Jan; Margarone, Daniele; Lutoslawski, P.; Scuderi, Valentina; Milluzzo, G.; Kaufman, Jan; Wiste, Tuomas; Dalui, M.; Ekerfelt, H.; Gallardo Gonzalez, I.; Lundh, O.; Persson, A.; Picciotto, A.; Crivellari, M.; Bagolini, A.; Bellutti, P.; Magnusson, J.; Gonoskov, A.; Klimša, Ladislav; Kopeček, Jaromír; Laštovička, Tomáš; Cirrone, G.A.P.; Wahlström, C.-G.; Korn, Georg

    2017-01-01

    Roč. 12, Mar (2017), s. 1-6, č. článku C03040. ISSN 1748-0221. [Medical and Multidisciplinary Applications of Laser -Driven Ion Beams at Eli-Beamlines. Catania, 07.09.2016-10.09.2016] R&D Projects: GA ČR(CZ) GA15-02964S; GA MŠk EF15_008/0000162 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162 Institutional support: RVO:68378271 Keywords : accelerator Applications * Beam dynamics Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.220, year: 2016

  13. Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance.

    Science.gov (United States)

    Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen

    2017-10-19

    Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I on /I off ratio of 4.91 × 10 3 , a high photoconductive gain of 1.10 × 10 3 , a high detectivity of 1.65 × 10 13 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm -2 ). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

  14. METALLICITY IN THE GRB 100316D/SN 2010bh HOST COMPLEX

    International Nuclear Information System (INIS)

    Levesque, Emily M.; Berger, Edo; Soderberg, Alicia M.; Chornock, Ryan

    2011-01-01

    The recent long-duration GRB 100316D, associated with supernova SN 2010bh and detected by Swift, is one of the nearest gamma-ray burst (GRB)-supernovae (SNe) ever observed (z = 0.059). This provides us with a unique opportunity to study the explosion environment on ∼kpc scale in relation to the host galaxy complex. Here we present spatially resolved spectrophotometry of the host galaxy, focusing on both the explosion site and the brightest star-forming regions. Using these data, we extract the spatial profiles of the relevant emission features (Hα, Hβ, [O III]λ5007, and [N II]λ6584) and use these profiles to examine variations in metallicity and star formation rate (SFR) as a function of position in the host galaxy. We conclude that GRB 100316D/SN2010bh occurred in a low-metallicity host galaxy, and that the GRB-SN explosion site corresponds to the region with the lowest metallicity and highest SFR sampled by our observations.

  15. Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices

    Science.gov (United States)

    2016-03-01

    ARL-TR-7618 ● MAR 2016 US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in...US Army Research Laboratory Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices by Blair C...Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT

  16. Shock pressure induced by 0.44 mu m laser radiation on aluminum targets

    Czech Academy of Sciences Publication Activity Database

    Batani, D.; Stabile, H.; Ravasio, A.; Desai, T.; Lucchini, G.; Strati, F.; Ullschmied, Jiří; Krouský, Eduard; Skála, Jiří; Králiková, Božena; Pfeifer, Miroslav; Kadlec, Christelle; Mocek, Tomáš; Präg R., Ansgar; Nishimura, H.; Ochi, Y.; Kilpio, A.; Shashkov, E.; Stuchebrukhov, I.; Vovchenko, V.; Krasuyk, I.

    2003-01-01

    Roč. 21, č. 4 (2003), s. 481-487 ISSN 0263-0346 R&D Projects: GA MŠk LN00A100 Grant - others:HPRI-CT(XX) 1999-00053 Institutional research plan: CEZ:AV0Z2043910 Keywords : rear target luminosity, shock pressure, shock waves Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.646, year: 2003

  17. Time-resolved tunable diode laser absorption spectroscopy of excited argon and ground-state titanium atoms in pulsed magnetron discharges

    Czech Academy of Sciences Publication Activity Database

    Sushkov, V.; Do, H.T.; Čada, Martin; Hubička, Zdeněk; Hippler, R.

    2013-01-01

    Roč. 22, č. 1 (2013), 1-10 ISSN 0963-0252 R&D Projects: GA ČR(CZ) GAP205/11/0386; GA ČR GAP108/12/2104 Institutional research plan: CEZ:AV0Z10100522 Keywords : absorption spectroscopy * diode laser * magnetron * argon metastable * HiPIMS * titanium * time-resolved Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.056, year: 2013 http://iopscience.iop.org/0963-0252/22/1/015002/

  18. Reproducibility of The Abdominal and Chest Wall Position by Voluntary Breath-Hold Technique Using a Laser-Based Monitoring and Visual Feedback System

    International Nuclear Information System (INIS)

    Nakamura, Katsumasa; Shioyama, Yoshiyuki; Nomoto, Satoru; Ohga, Saiji; Toba, Takashi; Yoshitake, Tadamasa; Anai, Shigeo; Terashima, Hiromi; Honda, Hiroshi

    2007-01-01

    Purpose: The voluntary breath-hold (BH) technique is a simple method to control the respiration-related motion of a tumor during irradiation. However, the abdominal and chest wall position may not be accurately reproduced using the BH technique. The purpose of this study was to examine whether visual feedback can reduce the fluctuation in wall motion during BH using a new respiratory monitoring device. Methods and Materials: We developed a laser-based BH monitoring and visual feedback system. For this study, five healthy volunteers were enrolled. The volunteers, practicing abdominal breathing, performed shallow end-expiration BH (SEBH), shallow end-inspiration BH (SIBH), and deep end-inspiration BH (DIBH) with or without visual feedback. The abdominal and chest wall positions were measured at 80-ms intervals during BHs. Results: The fluctuation in the chest wall position was smaller than that of the abdominal wall position. The reproducibility of the wall position was improved by visual feedback. With a monitoring device, visual feedback reduced the mean deviation of the abdominal wall from 2.1 ± 1.3 mm to 1.5 ± 0.5 mm, 2.5 ± 1.9 mm to 1.1 ± 0.4 mm, and 6.6 ± 2.4 mm to 2.6 ± 1.4 mm in SEBH, SIBH, and DIBH, respectively. Conclusions: Volunteers can perform the BH maneuver in a highly reproducible fashion when informed about the position of the wall, although in the case of DIBH, the deviation in the wall position remained substantial

  19. Coherently combined power of 20 W at 2000 nm from a pair of thulium-doped fiber lasers

    Czech Academy of Sciences Publication Activity Database

    Honzátko, Pavel; Baravets, Yauhen; Todorov, Filip; Peterka, Pavel; Becker, M.

    2013-01-01

    Roč. 10, č. 9 (2013) ISSN 1612-2011 R&D Projects: GA ČR(CZ) GAP205/11/1840; GA MPO FR-TI4/734 Institutional support: RVO:67985882 Keywords : model * cavity * arrays Subject RIV: BH - Optics , Masers, Lasers Impact factor: 2.964, year: 2013

  20. Analysis of the decomposition gases from α and β-Cd(BH4)2 synthesized by temperature controlled mechanical milling

    DEFF Research Database (Denmark)

    Blanchard, Didier; Zatti, Matteo; Vegge, Tejs

    2013-01-01

    We present a comprehensive study on the controlled phase synthesis and thermal decomposition of Cd(BH2)4, a material for solid state hydrogen storage obtained via the metathesis reaction of LiBH4 with CdCl2. By adjusting the stochiometry of the reactants and controlling the mechanical milling vial...... temperature, we have isolated the tetragonal (P42mn) low temperature phase and the cubic (View the MathML source) high temperature phase of the cadmium borohydride. Cd(BH2)4 has a low thermodynamic stability and decomposes with fast kinetic at 348 K, when heated at 1 K min−1 against a backpressure of 1 bar H2...

  1. Studies of the effects of TiCl{sub 3} in LiBH{sub 4}/CaH{sub 2}/TiCl{sub 3} reversible hydrogen storage system

    Energy Technology Data Exchange (ETDEWEB)

    Liu Dongan [Ford Motor Company, Research and Advanced Engineering, MD 1170/RIC, Dearborn, MI 48121 (United States); Department of Mechanical Engineering, University of Michigan, 1023 H. H. Dow Building 2350 Hayward Street, Ann Arbor, MI 48109-2125 (United States); Yang Jun, E-mail: jyang27@ford.com [Ford Motor Company, Research and Advanced Engineering, MD 1170/RIC, Dearborn, MI 48121 (United States); Ni Jun [Department of Mechanical Engineering, University of Michigan, 1023 H. H. Dow Building 2350 Hayward Street, Ann Arbor, MI 48109-2125 (United States); Drews, Andy [Ford Motor Company, Research and Advanced Engineering, MD 1170/RIC, Dearborn, MI 48121 (United States)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer We systematically studied the effects of TiCl{sub 3} in LiBH{sub 4}/CaH{sub 2}/TiCl{sub 3} hydrogen storage system. Black-Right-Pointing-Pointer It is found that adding 0.25 TiCl{sub 3} produces fully reversible hydrogen absorption and desorption and a lower desorption temperature. Black-Right-Pointing-Pointer LiCl experiences four different states, i.e. 'formed-solid solution-molten solution-precipitation', in the whole desorption process of the system. Black-Right-Pointing-Pointer The incorporation of LiCl into LiBH{sub 4} forms more viscous molten LiBH{sub 4}{center_dot}LiCl, leading to fast kinetics. Black-Right-Pointing-Pointer The precipitation and re-incorporation of LiCl into LiBH{sub 4} lead to a fully reversible complex hydrogen storage system. - Abstract: In the present study, the effects of TiCl{sub 3} on desorption kinetics, absorption/desorption reversibility, and related phase transformation processes in LiBH{sub 4}/CaH{sub 2}/TiCl{sub 3} hydrogen storage system was studied systematically by varying its concentration (x = 0, 0.05, 0.15 and 0.25). The results show that LiCl forms during ball milling of 6LiBH{sub 4}/CaH{sub 2}/xTiCl{sub 3} and that as temperature increases, o-LiBH{sub 4} transforms into h-LiBH{sub 4}, into which LiCl incorporates, forming solid solution of LiBH{sub 4}{center_dot}LiCl, which melts above 280 Degree-Sign C. Molten LiBH{sub 4}{center_dot}LiCl is more viscous than molten LiBH{sub 4}, preventing the clustering of LiBH{sub 4} and the accompanied agglomeration of CaH{sub 2}, and thus preserving the nano-sized phase arrangement formed during ball milling. Above 350 Degree-Sign C, the molten solution LiBH{sub 4}{center_dot}LiCl further reacts with CaH{sub 2}, precipitating LiCl. The main hydrogen desorption reaction is between molten LiBH{sub 4}{center_dot}LiCl and CaH{sub 2} and not between molten LiBH{sub 4} and CaH{sub 2}. This alters the hydrogen reaction thermodynamics and

  2. Growth of GaN-based non- and semipolar heterostructures for high efficiency light emitters

    International Nuclear Information System (INIS)

    Wernicke, Tim

    2010-01-01

    well as transmission electron microscopy. Homoepitaxial layers on bulk GaN substrates exhibit an excellent crystal quality (FWHM 2 . The layers on these substrates exhibit a distinct pyramidal surface morphology resulting in a distortion of the optical and electronic properties of the emitter heterostructure. When we reduced the adatom diffusion length, the hillock structure could be strongly reduced for the semipolar orientations (10 anti 11), (10 anti 12) and (11 anti 22) but not for m-plane GaN. Using these substrates the In-incorporation into quantum wells was studied. The (10 anti 11) exhibited the highest incorporation efficiency followed by (11 anti 22) and c-plane. M-plane and (1012) feature a much lower In-incorporation compared to the other orientations. The favorable orientation for green emitters would be therefore the (10 anti 11) and (11 anti 22). We grew high-quality laser heterostructures with very low defect densities on bulk m-plane and semipolar GaN substrates. These structures show amplified stimulated emission and the tilting of laser modes in semipolar resonators due to birefringence was experimentally observed for the first time. Epitaxial growth and device fabrication processes were developed to realize LED structures and broad area laser devices on nonpolar surfaces. We were able to demonstrate current-injection InGaN MQW LEDs at 410 nm with a maximum output power of 2.5 mW on m-plane GaN substrates.

  3. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

    KAUST Repository

    Detchprohm, T.

    2016-11-05

    The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

  4. Anomalous low-temperature Coulomb drag in graphene-GaAs heterostructures.

    Science.gov (United States)

    Gamucci, A; Spirito, D; Carrega, M; Karmakar, B; Lombardo, A; Bruna, M; Pfeiffer, L N; West, K W; Ferrari, A C; Polini, M; Pellegrini, V

    2014-12-19

    Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies. Here we report a new class of heterostructures comprising a single-layer (or bilayer) graphene in close proximity to a quantum well created in GaAs and supporting a high-mobility two-dimensional electron gas. In our devices, graphene is naturally hole-doped, thereby allowing for the investigation of electron-hole interactions. We focus on the Coulomb drag transport measurements, which are sensitive to many-body effects, and find that the Coulomb drag resistivity significantly increases for temperatures law, therefore displaying a notable departure from the ordinary quadratic temperature dependence expected in a weakly correlated Fermi-liquid. This anomalous behaviour is consistent with the onset of strong interlayer correlations. Our heterostructures represent a new platform for the creation of coherent circuits and topologically protected quantum bits.

  5. Rare-earth nickelates RNiO3: thin films and heterostructures

    Science.gov (United States)

    Catalano, S.; Gibert, M.; Fowlie, J.; Íñiguez, J.; Triscone, J.-M.; Kreisel, J.

    2018-04-01

    This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO3 where R is a trivalent rare-earth R  =  La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron–lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.

  6. High energy density matter generation using a focused soft-X-ray laser for volumetric heating of thin foils

    Czech Academy of Sciences Publication Activity Database

    Rus, Bedřich; Mocek, Tomáš; Kozlová, Michaela; Polan, Jiří; Homer, Pavel; Fajardo, M.; Foord, M.E.; Chung, H.; Moon, S.J.; Lee, R. W.

    2011-01-01

    Roč. 7, č. 1 (2011), s. 11-16 ISSN 1574-1818 R&D Projects: GA ČR GA202/05/2316 Grant - others:AV ČR(CZ) M100100911 Institutional research plan: CEZ:AV0Z10100523 Keywords : laboratory X-ray lasers * volumetric heating * aluminum transmission * polyimide transmission * warm dense matter Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.595, year: 2011 http://www.sciencedirect.com/science/article/pii/S1574181810000406

  7. Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field

    International Nuclear Information System (INIS)

    Duque, C.A.; Kasapoglu, E.; Sakiroglu, S.; Sari, H.; Soekmen, I.

    2011-01-01

    In this work the effects of intense laser on the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga 1-x Al x As quantum wells are studied under, applied electric and magnetic field. The electric field is applied along the growth direction of the quantum well whereas the magnetic field has been considered to be in-plane. The calculations were performed within the density matrix formalism with the use of the effective mass and parabolic band approximations. The intense laser effects are included through the Floquet method, by modifying the confining potential associated to the heterostructure. Results are presented for the nonlinear optical absorption, the nonlinear optical rectification and the resonant peak of these two optical processes. Several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation have been considered. The outcome of the calculation suggests that the nonlinear optical absorption and optical rectification are non-monotonic functions of the dimensions of the heterostructure and of the external perturbations considered in this work.

  8. THE M BH-L SPHEROID RELATION AT HIGH AND LOW MASSES, THE QUADRATIC GROWTH OF BLACK HOLES, AND INTERMEDIATE-MASS BLACK HOLE CANDIDATES

    International Nuclear Information System (INIS)

    Graham, Alister W.; Scott, Nicholas

    2013-01-01

    From a sample of 72 galaxies with reliable supermassive black hole masses M bh , we derive the M bh -(host spheroid luminosity, L) relation for (1) the subsample of 24 core-Sérsic galaxies with partially depleted cores, and (2) the remaining subsample of 48 Sérsic galaxies. Using K s -band Two Micron All Sky Survey data, we find the near-linear relation M bh ∝L 1.10±0.20 K s for the core-Sérsic spheroids thought to be built in additive dry merger events, while we find the relation M bh ∝L 2.73±0.55 K s for the Sérsic spheroids built from gas-rich processes. After converting literature B-band disk galaxy magnitudes into inclination- and dust-corrected bulge magnitudes, via a useful new equation presented herein, we obtain a similar result. Unlike with the M bh -(velocity dispersion) diagram, which is also updated here using the same galaxy sample, it remains unknown whether barred and non-barred Sérsic galaxies are offset from each other in the M bh -L diagram. While black hole feedback has typically been invoked to explain what was previously thought to be a nearly constant M bh /M Spheroid mass ratio of ∼0.2%, we advocate that the near-linear M bh -L and M bh -M Spheroid relations observed at high masses may have instead arisen largely from the additive dry merging of galaxies. We argue that feedback results in a dramatically different scaling relation, such that black hole mass scales roughly quadratically with the spheroid mass in Sérsic galaxies. We therefore introduce a revised cold-gas 'quasar' mode feeding equation for semi-analytical models to reflect what we dub the quadratic growth of black holes in Sérsic galaxies built amidst gas-rich processes. Finally, we use our new Sérsic M bh -L equations to predict the masses of candidate intermediate mass black holes in almost 50 low-luminosity spheroids containing active galactic nuclei, finding many masses between that of stellar mass black holes and supermassive black holes.

  9. Saturated ablation in metal hydrides and acceleration of protons and deuterons to keV energies with a soft-x-ray laser

    Czech Academy of Sciences Publication Activity Database

    Andreasson, J.; Iwan, B.; Andrejczuk, A.; Abreu, E.; Bergh, M.; Caleman, C.; Nelson, A.J.; Bajt, S.; Chalupský, Jaromír; Chapman, H.N.; Fäustlin, R.R.; Hájková, Věra; Heimann, P.A.; Hjörvarsson, B.; Juha, Libor; Klinger, D.; Krzywinski, J.; Nagler, B.; Pálsson, G.K.; Singer, W.; Seibert, M.M.; Sobierajski, R.; Toleikis, S.; Tschentscher, T.; Vinko, S.M.; Lee Seung-Soo, S.; Hajdu, J.; Timneanu, N.

    2011-01-01

    Roč. 83, č. 1 (2011), "016403-1"-"016403-7" ISSN 1539-3755 R&D Projects: GA AV ČR KAN300100702; GA MŠk LC510; GA MŠk(CZ) LC528; GA MŠk LA08024; GA AV ČR IAAX00100903; GA MŠk(CZ) ME10046 Institutional research plan: CEZ:AV0Z10100523 Keywords : X-ray laser * XUV laser * warm dense matter * ion emission Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.255, year: 2011

  10. Hydrolysis and regeneration of sodium borohydride (NaBH4) - A combination of hydrogen production and storage

    Science.gov (United States)

    Chen, W.; Ouyang, L. Z.; Liu, J. W.; Yao, X. D.; Wang, H.; Liu, Z. W.; Zhu, M.

    2017-08-01

    Sodium borohydride (NaBH4) hydrolysis is a promising approach for hydrogen generation, but it is limited by high costs, low efficiency of recycling the by-product, and a lack of effective gravimetric storage methods. Here we demonstrate the regeneration of NaBH4 by ball milling the by-product, NaBO2·2H2O or NaBO2·4H2O, with MgH2 at room temperature and atmospheric pressure without any further post-treatment. Record yields of NaBH4 at 90.0% for NaBO2·2H2O and 88.3% for NaBO2·4H2O are achieved. This process also produces hydrogen from the splitting of coordinate water in hydrated sodium metaborate. This compensates the need for extra hydrogen for generating MgH2. Accordingly, we conclude that our unique approach realizes an efficient and cost-effective closed loop system for hydrogen production and storage.

  11. Application of laser-induced breakdown spectroscopy to the analysis of algal biomass for industrial biotechnology

    Czech Academy of Sciences Publication Activity Database

    Pořízka, P.; Procházka, D.; Pilát, Zdeněk; Krajčarová, L.; Kaiser, J.; Malina, R.; Novotný, J.; Zemánek, Pavel; Ježek, Jan; Šerý, Mojmír; Bernatová, Silvie; Krzyžánek, Vladislav; Hrubanová, Kamila; Novotný, K.; Trtílek, M.; Samek, Ota

    74-75, AUG-SEP (2012), s. 169-176 ISSN 0584-8547 R&D Projects: GA ČR GAP205/11/1687; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : LIBS * double-pulse * water-jet * algal biomass * biotechnology Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.141, year: 2012

  12. Growth and properties of low-dimensional III-V semiconductor nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Heiss, Martin

    2010-08-25

    In this work the properties of GaAs nanowire based heterostructures are investigated. The nanowires and their heterostructures are synthesized with Molecular Beam Epitaxy. The optical and structural properties are characterized by means of low temperature confocal micro-photoluminescence spectroscopy and Transmission Electron Microscopy. Molecular Beam Epitaxy is a versatile technique that allows to switch from radial to axial growth in order to cap the nanowires by an epitaxial prismatic AlGaAs/GaAs heterostructure. This can passivate surface states and improve the optical properties. The effect of such a passivation layer is studied by quantitative comparison of the diameter dependence of photoluminescence in passivated and unpassivated nanowires. The passivation is an important prerequisite for more complex axial heterostructures. Evidence for radial confinement effects is found in passivated nanowires with core diameters smaller than 70 nm. Furthermore, the polarization dependence of light absorption and emission is investigated. Two different types of axial heterostructures are studied that have the potential to further enhance the functionality of such nanowires. In a first step, the possibility of growth of axial InGaAs heterostructure in the Au-free Molecular Beam Epitaxy growth regime is investigated. Suitable growth conditions are identified and the growth temperature window for both GaAs and InGaAs nanowires is determined. At the optimum growth temperature for GaAs nanowires, the incorporation of indium in the structure is limited to a few percent. It is shown that by lowering the growth temperature the indium concentration in the structure can be increased up to 20%. The optical properties of the synthesized axial heterostructures are investigated by means of micro-photoluminescence spectroscopy and Transmission Electron Microscopy. The second type of axial nanowire heterostructure investigated in the present work is characterized by a change in crystal

  13. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala

    2016-11-21

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation. © 2016 IOP Publishing Ltd.

  14. 2D lateral heterostructures of group-III monochalcogenide: Potential photovoltaic applications

    Science.gov (United States)

    Cheng, Kai; Guo, Yu; Han, Nannan; Jiang, Xue; Zhang, Junfeng; Ahuja, Rajeev; Su, Yan; Zhao, Jijun

    2018-04-01

    Solar photovoltaics provides a practical and sustainable solution to the increasing global energy demand. Using first-principles calculations, we investigate the energetics and electronic properties of two-dimensional lateral heterostructures by group-III monochalcogenides and explore their potential applications in photovoltaics. The band structures and formation energies from supercell calculations demonstrate that these heterostructures retain semiconducting behavior and might be synthesized in laboratory using the chemical vapor deposition technique. According to the computed band offsets, most of the heterojunctions belong to type II band alignment, which can prevent the recombination of electron-hole pairs. Besides, the electronic properties of these lateral heterostructures can be effectively tailored by the number of layers, leading to a high theoretical power conversion efficiency over 20%.

  15. Continuous-wave violet generation at 373.5 nm by frequency-doubled power-scaled near-infrared emitting Pr:YAlO.sub.3./sub. laser

    Czech Academy of Sciences Publication Activity Database

    Fibrich, Martin; Jelínková, H.

    2013-01-01

    Roč. 10, č. 10 (2013), "105814-1"-"105814-4" ISSN 1612-2011 Institutional support: RVO:68378271 Keywords : blue generation * emission * YAlO 3 Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.964, year: 2013

  16. Structural stability of complex hydrides LiBH4 revisited

    DEFF Research Database (Denmark)

    Lodziana, Zbigniew; Vegge, Tejs

    2004-01-01

    A systematic approach to study the phase stability of LiBH4 based on ab initio calculations is presented. Three thermodynamically stable phases are identified and a new phase of Cc symmetry is proposed for the first time for a complex hydride. The x-ray diffraction pattern and vibrational spectra...

  17. A quantitative analysis on the interfacial effect in the Pt/Ba0.5Sr0.5TiO3/La0.67Sr0.33MnO3 heterostructure

    International Nuclear Information System (INIS)

    Miao, J; Wang, Y; Tian, H Y; Zhou, X Y; Chan, H L W; Choy, C L; Cao, L X; Zhao, B R

    2006-01-01

    The heterostructure of Pt/Ba 0.5 Sr 0.5 TiO 3 /La 0.67 Sr 0.33 MnO 3 (Pt/BST/LSMO) with the BST thickness ranging from 120 to 550 nm was fabricated by pulsed laser deposition. The dielectric constant (ε) of the heterostructure was measured under different electrical fields (E) and frequency (f). A strong thickness dependence of the value of ε, the ε-E dependence and the ε-f dependence were observed, which can be well explained by the series-capacitor model, based on the assumption that the heterostructure electrically consists of a 'bulk' layer and an interfacial layer between the Pt and BST layers. The dielectric properties of the 'bulk' layer and the interface layer were obtained. At room temperature, the dielectric constant of the 'bulk' layer was 1204 (at 100 kHz) and had a power law dependence on frequency. The ratio of thickness over the dielectric constant (d i /ε i ) of the interface layer, which was used to characterize the property of the Pt/BST interface, was found to be around 0.08 nm at room temperature and to be independent of frequency

  18. Closed-loop wavelength stabilization of an optical parametric oscillator as a front end of a high-power iodine laser chain

    Czech Academy of Sciences Publication Activity Database

    Král, Lukáš

    2007-01-01

    Roč. 78, č. 5 (2007), 053104/1-053104/5 ISSN 0034-6748 R&D Projects: GA MŠk(CZ) LC528; GA ČR GA202/06/0814 Grant - others:LASERLAB-EUROPE(XE) RII3-CT-2003-506350 Program:FP6 Institutional research plan: CEZ:AV0Z10100523 Keywords : gas lasers * optical parametric oscillators * nonlinear optics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.384, year: 2007

  19. AlN/GaN heterostructures for normally-off transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.; Tereshenko, O. E. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Abgaryan, K. K.; Reviznikov, D. L. [Dorodnicyn Computing Centre of the Russian Academy of Sciences (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Parnes, Ya. M.; Tikhomirov, V. G. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Prosvirin, I. P. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

    2017-03-15

    The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

  20. Compaction of LiBH4-LiAlH4 nanoconfined in activated carbon nanofibers: Dehydrogenation kinetics, reversibility, and mechanical stability during cycling

    DEFF Research Database (Denmark)

    Plerdsranoy, Praohatsorn; Javadian-Deylami, Seyd Payam; Jensen, Nicholai Daugaard

    2017-01-01

    To enhance volumetric hydrogen capacity for on-board fuel cells, compaction of LiAlH4-LiBH4 nanoconfined in activated carbon nanofibers (ACNF) is for the first time proposed. Loose powders of milled and nanoconfined LiAlH4-LiBH4 samples are compacted under 976 MPa to obtain the pellet samples...... with thickness and diameter of ∼1.20–1.30 and 8.0 mm, respectively. Dehydrogenation temperature of milled LiAlH4-LiBH4 increases from 415 to 434 °C due to compaction, while those of both compacted and loose powder samples of nanoconfined LiAlH4-LiBH4 are lower at comparable temperature of 330–335 °C. Hydrogen...

  1. Multiple scattering theory for superconducting heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ujfalussy, Balazs [Wigner Research Centre for Physics, Budapest (Hungary)

    2016-07-01

    We generalize the screened Korringa-Kohn-Rostoker method for solving the corresponding Kohn-Sham-Bogoliubov-de Gennes equations for surfaces and interfaces. As an application of the theory, we study the quasiparticle spectrum of Au overlayers on a Nb(100) host. We find that within the superconducting gap region, the quasiparticle spectrum consists of Andreev bound states with a dispersion which is closely connected to the underlying electronic structure of the overlayer. We also find that the spectrum has a strongly k-dependent induced gap. The properties of the gap are discussed in relation to the thickness of the overlayer, and it is shown that certain states do not participate in the Andreev scattering process. From the thickness dependence of the gap size we calculate the superconducting critical temperature of Au/Nb(100) heterostructures what we compare with with experiments. Moreover, predictions are made for similar heterostructures of other compounds.

  2. Recent experiments on the hydrodynamics of laser-produced plasmas conducted at the PALS laboratory

    Czech Academy of Sciences Publication Activity Database

    Batani, D.; Dezulian, R.; Redaelli, R.; Benocci, R.; Stabile, H.; Canova, F.; Desai, T.; Lucchini, G.; Krouský, Eduard; Mašek, Karel; Pfeifer, Miroslav; Skála, Jiří; Dudžák, Roman; Rus, Bedřich; Ullschmied, Jiří; Malka, V.; Fauré, J.; Koenig, M.; Limpouch, J.; Nazarov, W.; Pepler, D.; Nagai, K.; Norimatsu, T.; Nishimura, H.

    2007-01-01

    Roč. 25, - (2007), s. 127-141 ISSN 0263-0346 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : equation of state * laboratory astrophysics * plasma hydrodynamics * shock acceleration * pressure * smoothing. Subject RIV: BH - Optics, Masers, Lasers Impact factor: 4.696, year: 2007

  3. Strong temperature effect on X-ray photo-etching of polytetrafluoroethylene using a 10Hz laser-plasma radiation source based on a gas puff target

    Czech Academy of Sciences Publication Activity Database

    Bartnik, A.; Fiedorowicz, H.; Jarocki, R.; Juha, Libor; Kostecki, J.; Rakowski, R.; Szczurek, M.

    2006-01-01

    Roč. 82, - (2006), s. 529-532 ISSN 0946-2171 R&D Projects: GA MŠk(CZ) LC510 Grant - others:Ministery of Scientific Research(PL) 3 T08C 002 27 Institutional research plan: CEZ:AV0Z10100523 Keywords : photo-etching * organic polymers * laser-produced plasmas Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.023, year: 2006

  4. The Commitment of B&H Companies to Innovation or Imitation

    Directory of Open Access Journals (Sweden)

    Zijada Rahimić

    2011-07-01

    Full Text Available Innovations have become an increasingly important factor in the struggle to preserve and improve the competitive position of enterprises in domestic and international markets. Innovative companies are those that react to sudden changes in the environment but are also the very cause of change. Dynamic and turbulent changes in the environment and constantly increasing competition, among other factors, have affected the shortening product life cycle and the duration of innovative solutions. Starting from the model creation value, a company may decide to create a new model for value creation or create an imitation - an adaptation of a dominant model in the industry. Both extreme positions (innovator vs. follower require exceptional organizational skills. The aim of this paper is that, the life cycle of products and companies’ reactions to changes, determines whether the B&H companies are inventors or followers. In order to get a complete picture of the innovative strength of the observed B&H enterprises, we will, in addition, analyze the dynamics of investment in research and development, as well as top management’s view of the importance of innovation in achieving competitive advantages for their companies.

  5. High-efficiency super capacitors based on hetero-structured α-MnO{sub 2} nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Ghouri, Zafar Khan [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shaheer Akhtar, M. [New & Renewable Energy Material Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of); Zahoor, Awan [Department of Chemical Engineering, NED University of Engineering & Technology, University Road, Karachi 75270 (Pakistan); Barakat, Nasser A.M., E-mail: nasser@jbnu.ac.kr [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Department of Chemical Engineering, Faculty of Engineering, El-Minia University, El-Minia (Egypt); Han, Weidong [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Park, Mira [Department of Organic materials and Fiber Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kim, Hak Yong, E-mail: khy@jbnu.ac.kr [Department of BIN Fusion Technology, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2015-09-05

    Highlights: • Hetero-structured α-MnO{sub 2} nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg{sup −1} with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO{sub 2}) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO{sub 2} nanorods. Supercapacitive performance of the hetero-structured α-MnO{sub 2} nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO{sub 2} hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO{sub 6}] structure yield a significantly high specific capacitance of 298 Fg{sup −1} at 5 mV s{sup −1} and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO{sub 2} electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport.

  6. Voltage control of magnetism in multiferroic heterostructures.

    Science.gov (United States)

    Liu, Ming; Sun, Nian X

    2014-02-28

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

  7. XUV spectra of laser-produced zirconium plasmas

    Czech Academy of Sciences Publication Activity Database

    Li, B.; Higashiguchi, T.; Otsuka, T.; Jiang, W.; Endo, Akira; Dunne, P.; O'Sullivan, G.

    2012-01-01

    Roč. 45, č. 24 (2012), "245004-1"-"245004-6" ISSN 0953-4075 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6 k HILASE(XE) CZ.1.07/2.3.00/20.0143 Program:EE Institutional support: RVO:68378271 Keywords : x-ray-spectra * dielectronic recombination * transitions * spectroscopy * microscopy * ions Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.031, year: 2012

  8. The role of magnetoelastic strain on orbital control and transport properties in an LaTiO(3)-CoFe(2)O(4) heterostructure.

    Science.gov (United States)

    Li, J; Chu, H F; Zhang, Y; Wang, J; Zheng, D N; Song, Q; Wang, P; Ma, Y G; Ong, C K; Wang, S J

    2009-07-08

    Epitaxial heterostructures of CoFe(2)O(4)/LaTiO(3)/LaAlO(3) have been successfully prepared by using the pulsed laser deposition technique. The magnetoresistance (MR) of the samples is negative and linear with field at H≥2 T, exhibiting no dependence on field directions. Nevertheless, when Hstrains on the bottom LaTiO(3) layer. Apparently the orbital status and the one-electron bandwidth in the LaTiO(3) layer are altered, which leads to a change in resistance.

  9. Mechanism of single-pulse ablative generation of laser-induced periodic surface structures

    Czech Academy of Sciences Publication Activity Database

    Shugaev, M.V.; Gnilitskyi, I.; Bulgakova, Nadezhda M.; Zhigilei, L.

    2017-01-01

    Roč. 96, č. 20 (2017), s. 1-9, č. článku 205429. ISSN 2469-9950 R&D Projects: GA MŠk LO1602; GA ČR GA16-12960S; GA MŠk LM2015086 EU Projects: European Commission(XE) 739573 - HiLASE CoE Grant - others:OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674 Institutional support: RVO:68378271 Keywords : molecular-dynamics simulations * metals * electron * spallation Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 3.836, year: 2016

  10. Cosmic Evolution of Black Holes And Spheroids. 1, the M(BH)-Sigma Relation at Z=0.36

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Jong-Hak; Treu, Tommaso; /UC, Santa Barbara; Malkan, Matthew A.; /UCLA; Blandford, Roger D.; /KIPAC, Menlo Park

    2006-04-17

    We test the evolution of the correlation between black hole mass and bulge velocity dispersion (M{sub BH} - {sigma}), using a carefully selected sample of 14 Seyfert 1 galaxies at z = 0.36 {+-} 0.01. We measure velocity dispersion from stellar absorption lines around Mgb (5175 {angstrom}) and Fe (5270 {angstrom}) using high S/N Keck spectra, and estimate black hole mass from the H{beta} line width and the optical luminosity at 5100 {angstrom}, based on the empirically calibrated photo-ionization method. We find a significant offset from the local relation, in the sense that velocity dispersions were smaller for given black hole masses at z = 0.36 than locally. We investigate various sources of systematic uncertainties and find that those cannot account for the observed offset. The measured offset is {Delta} log M{sub BH} = 0.62 {+-} 0.10 {+-} 0.25, i.e. {Delta} log {sigma} = 0.15 {+-} 0.03 {+-} 0.06, where the error bars include a random component and an upper limit to the systematics. At face value, this result implies a substantial growth of bulges in the last 4 Gyr, assuming that the local M{sub BH} - {sigma} relation is the universal evolutionary end-point. Along with two samples of active galaxies with consistently determined black hole mass and stellar velocity dispersion taken from the literature, we quantify the observed evolution with the best fit linear relation, {Delta} log M{sub BH} = (1.66 {+-} 0.43)z + (0.04 {+-} 0.09) with respect to the local relationship of Tremaine et al. (2002), and {Delta} log M{sub BH} = (1.55 {+-} 0.46)z +(0.01 {+-} 0.12) with respect to that of Ferrarese (2002). This result is consistent with the growth of black holes predating the final growth of bulges at these mass scales (<{sigma}> = 170 km s{sup -1}).

  11. Pyroelectric effect and lattice thermal conductivity of InN/GaN heterostructures

    Science.gov (United States)

    Hansdah, Gopal; Sahoo, Bijay Kumar

    2018-06-01

    The built-in-polarization (BIP) of InN/GaN heterostructures enhances Debye temperature, phonon mean free path and thermal conductivity of the heterostructure at room temperature. The variation of thermal conductivities (kp: including polarization mechanism and k: without polarization mechanism) with temperature predicts the existence of a transition temperature (Tp) between primary and secondary pyroelectric effect. Below Tp, kp is lower than k; while above Tp, kp is significantly contributed from BIP mechanism due to thermal expansion. A thermodynamic theory has been proposed to explain the result. The room temperature thermal conductivity of InN/GaN heterostructure with and without polarization is respectively 32 and 48 W m-1 K-1. The temperature Tp and room temperature pyroelectric coefficient of InN has been predicted as 120 K and -8.425 μC m-2 K-1, respectively which are in line with prior literature studies. This study suggests that thermal conductivity measurement in InN/GaN heterostructures can help to understand the role of phonons in pyroelectricity.

  12. Superconducting cuprate heterostructures for hot electron bolometers

    Science.gov (United States)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-11-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La2-xSrxCuO4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV ˜γI3, with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ /dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area ge -ph≈1 W/K cm2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity.

  13. Superconducting cuprate heterostructures for hot electron bolometers

    International Nuclear Information System (INIS)

    Wen, B.; Yakobov, R.; Vitkalov, S. A.; Sergeev, A.

    2013-01-01

    Transport properties of the resistive state of quasi-two dimensional superconducting heterostructures containing ultrathin La 2−x Sr x CuO 4 layers synthesized using molecular beam epitaxy are studied. The electron transport exhibits strong deviation from Ohm's law, δV∼γI 3 , with a coefficient γ(T) that correlates with the temperature variation of the resistivity dρ/dT. Close to the normal state, analysis of the nonlinear behavior in terms of electron heating yields an electron-phonon thermal conductance per unit area g e−ph ≈1 W/K cm 2 at T = 20 K, one-two orders of magnitude smaller than in typical superconductors. This makes superconducting LaSrCuO heterostructures to be attractive candidate for the next generation of hot electron bolometers with greatly improved sensitivity

  14. Ultrafast strain engineering in complex oxide heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Popovich, Paul; Caviglia, Andrea; Hu, Wanzheng; Bromberger, Hubertus; Singla, Rashmi; Mitrano, Matteo; Hoffmann, Matthias C.; Kaiser, Stefan; Foerst, Michael [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Scherwitzl, Raoul; Zubko, Pavlo; Gariglio, Sergio; Triscone, Jean-Marc [Departement de Physique de la Matiere Condensee, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneve 4, Geneva (Switzerland); Cavalleri, Andrea [Max-Planck Research Group for Structural Dynamics - Center for Free Electron Laser Science, University of Hamburg (Germany); Department of Physics, Clarendon Laboratory, University of Oxford (United Kingdom)

    2012-07-01

    The mechanical coupling between the substrate and the thin film is expected to be effective on the ultrafast timescale, and could be exploited for the dynamic control of materials properties. Here, we demonstrate that a large-amplitude mid-infrared field, made resonant with a stretching mode of the substrate, can switch the electronic properties of a thin film across an interface. Exploiting dynamic strain propagation between different components of a heterostructure, insulating antiferromagnetic NdNiO{sub 3} is driven through a prompt, five-order-of-magnitude increase of the electrical conductivity, with resonant frequency and susceptibility that is controlled by choice of the substrate material. Vibrational phase control, extended here to a wide class of heterostructures and interfaces, may be conductive to new strategies for electronic phase control at THz repetition rates.

  15. Physics of SrTiO3-based heterostructures and nanostructures: a review.

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-02-09

    This review provides a summary of the rich physics expressed within SrTiO 3 -based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO 3 itself, we will then discuss the basics of SrTiO 3 -based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  16. Physics of SrTiO3-based heterostructures and nanostructures: a review

    Science.gov (United States)

    Pai, Yun-Yi; Tylan-Tyler, Anthony; Irvin, Patrick; Levy, Jeremy

    2018-03-01

    This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

  17. Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro

    2017-04-01

    Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.

  18. The development of BH3105E type neutron dose-equivalent meter

    International Nuclear Information System (INIS)

    Ji Changsong; Wang Tingting; Zhang Shuheng; Tan Baozeng

    2011-01-01

    A new BH3105E Type Neutron Dose-equivalent Meter has been developed. The 'multi-stick' ab- sorption method is used for thermal -14 MeV neutron equal dose-equivalent detection, what gives a high neutron sensitivity of 5 cps/μSv · h-1. RS-232 interface is accepted for signal communication (authors)

  19. NaCl-assisted one-step growth of MoS2-WS2 in-plane heterostructures

    Science.gov (United States)

    Wang, Zhan; Xie, Yong; Wang, Haolin; Wu, Ruixue; Nan, Tang; Zhan, Yongjie; Sun, Jing; Jiang, Teng; Zhao, Ying; Lei, Yimin; Yang, Mei; Wang, Weidong; Zhu, Qing; Ma, Xiaohua; Hao, Yue

    2017-08-01

    Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication of in-plane lateral heterostructures between TMDs has opened up excellent opportunities for engineering two-dimensional materials. The creation of high quality heterostructures with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate a one-step growth method for the construction of high-quality MoS2-WS2 in-plane heterostructures. The synthesis was carried out using ambient pressure chemical vapor deposition (APCVD) with the assistance of sodium chloride (NaCl). It was found that the addition of NaCl played a key role in lowering the growth temperatures, in which the Na-containing precursors could be formed and condensed on the substrates to reduce the energy of the reaction. As a result, the growth regimes of MoS2 and WS2 are better matched, leading to the formation of in-plane heterostructures in a single step. The heterostructures were proved to be of high quality with a sharp and clear interface. This newly developed strategy with the assistance of NaCl is promising for synthesizing other TMDs and their heterostructures.

  20. Strong magnetization and Chern insulators in compressed graphene/CrI 3 van der Waals heterostructures

    Science.gov (United States)

    Zhang, Jiayong; Zhao, Bao; Zhou, Tong; Xue, Yang; Ma, Chunlan; Yang, Zhongqin

    2018-02-01

    Graphene-based heterostructures are a promising material system for designing the topologically nontrivial Chern insulating devices. Recently, a two-dimensional monolayer ferromagnetic insulator CrI3 was successfully synthesized in experiments [B. Huang et al., Nature (London) 546, 270 (2017), 10.1038/nature22391]. Here, these two interesting materials are proposed to build a heterostructure (Gr /CrI3). Our first-principles calculations show that the system forms a van der Waals (vdW) heterostructure, which is relatively facilely fabricated in experiments. A Chern insulating state is acquired in the Gr /CrI3 heterostructure if the vdW gap is compressed to a distance between about 3.3 and 2.4 Å, corresponding to a required external pressure between about 1.4 and 18.3 GPa. Amazingly, very strong magnetization (about 150 meV) is found in graphene, induced by the substrate CrI3, despite the vdW interactions between them. A low-energy effective model is employed to understand the mechanism. The work functions, contact types, and band alignments of the Gr /CrI3 heterostructure system are also studied. Our work demonstrates that the Gr /CrI3 heterostructure is a promising system to observe the quantum anomalous Hall effect at high temperatures (up to 45 K) in experiments.

  1. Optical properties of a multibarrier structure under intense laser fields

    Science.gov (United States)

    Ospina, D. A.; Akimov, V.; Mora-Ramos, M. E.; Morales, A. L.; Tulupenko, V.; Duque, C. A.

    2015-11-01

    Using the diagonalization method and within the effective mass and parabolic band approximations, the energy spectrum and the wave functions are investigated in biased multibarrier structure taking into account the effects of nonresonant intense laser fields. We calculated the optical properties from the susceptibility using a nonperturbative formalism recently reported. We study the changes in the intersubband optical absorption coefficients and refraction index for several values of the dressing laser parameter and for some specific values of the electric field applied along the growth direction of the heterostructure. It is concluded from our study that the peaks in the optical absorption spectrum have redshifts or blueshifts as a function of the laser parameter and the electric field. These parameters could be suitable tools for tuning the electronic and optical properties of the multibarrier structure.

  2. On the design of experiments for the study of extreme field limits in the interaction of laser with ultrarelativistic electron beam

    Czech Academy of Sciences Publication Activity Database

    Bulanov, S.V.; Esirkepov, T.Z.; Hayashi, Y.; Kando, M.; Kiriyama, H.; Koga, J.K.; Kondo, K.; Kotaki, H.; Pirozhkov, A.S.; Bulanov, S.S.; Zhidkov, A.G.; Chen, P.; Neely, D.; Kato, Y.; Narozhny, N.B.; Korn, Georg

    2011-01-01

    Roč. 660, č. 1 (2011), s. 31-42 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10100522 Keywords : radiation damping * nonlinear Thomson and Compton scattering * quantum electrodynamics Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.207, year: 2011

  3. Optical studies on individual transitions in GaN:Zn,Si/AlGaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mohajerani, Matin; Behrends, Arne; Bakin, Andrey; Waag, Andreas [Institute for Semiconductor Technology, Braunschweig (Germany); Peters, Silke; Hofer, Helmut; Schmunk, Waldemar; Kueck, Stefan [Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)

    2012-07-01

    During the past few years many methods have been developed to generate single-photon sources including atoms, ions, molecules or impurities in semiconductors and quantum dots. In this work, we have investigated Si and Zn co-doped GaN/AlGaN heterostructures. This approach could potentially allow room temperature electrically driven single photon emission. The samples studied were fabricated by metal-organic chemical vapor deposition and were patterned by photolithography and plasma etching processes in 3D pillar structures in order to confine individual emitters. Photoluminescence (PL) images were obtained by a confocal fluorescence microscope with a spatial resolution of 0.3 {mu}m and focal resolution of 0.5 {mu}m demonstrating well separated pillars. PL spectra measured under 325 nm He-Cd laser excitation show a broad emission around 2.9 eV (blue luminescence band) which is attributed to transition between the shallow donor band and the Zn deep acceptor. In addition, time-resolved PL was utilized to study the recombination lifetime of the BL transitions by 375 nm pulsed laser excitation. The potential of the GaN:Zn system for single photon emission is discussed in detail.

  4. New approach to local anodic oxidation of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Martaus, Jozef; Gregusova, Dagmar; Cambel, Vladimir; Kudela, Robert; Soltys, Jan

    2008-01-01

    We have experimentally explored a new approach to local anodic oxidation (LAO) of a semiconductor heterostructures by means of atomic force microscopy (AFM). We have applied LAO to an InGaP/AlGaAs/GaAs heterostructure. Although LAO is usually applied to oxidize GaAs/AlGaAs/GaAs-based heterostructures, the use of the InGaP/AlGaAs/GaAs system is more advantageous. The difference lies in the use of different cap layer materials: Unlike GaAs, InGaP acts like a barrier material with respect to the underlying AlGaAs layer and has almost one order of magnitude lower density of surface states than GaAs. Consequently, the InGaP/AlGaAs/GaAs heterostructure had the remote Si-δ doping layer only 6.5 nm beneath the surface and the two-dimensional electron gas (2DEG) was confined only 23.5 nm beneath the surface. Moreover, InGaP unaffected by LAO is a very durable material in various etchants and allows us to repeatedly remove thin portions of the underlying AlGaAs layer via wet etching. This approach influences LAO technology fundamentally: LAO was used only to oxidize InGaP cap layer to define very narrow (∼50 nm) patterns. Subsequent wet etching was used to form very narrow and high-energy barriers in the 2DEG patterns. This new approach is promising for the development of future nano-devices operated both at low and high temperatures

  5. Interaction of Cu and plastic plasmas as a method of forming laser produced Cu plasma streams with a narrow jet or pipe geometry

    Czech Academy of Sciences Publication Activity Database

    Kasperczuk, A.; Pisarczyk, T.; Chodukowski, T.; Kalinowska, Z.; Parys, P.; Ullschmied, Jiří; Krouský, Eduard; Pfeifer, Miroslav; Skála, Jiří; Klir, D.; Kravarik, J.; Kubes, P.; Rezac, K.; Pisarczyk, P.

    2011-01-01

    Roč. 18, č. 4 (2011), 044503/1-044503/4 ISSN 1070-664X R&D Projects: GA MŠk(CZ) 7E09092; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z20430508; CEZ:AV0Z10100523 Keywords : laser-produced plasma * plasma streams * Cu-plasma jets * laser targets Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.147, year: 2011 http://pop.aip.org/ resource /1/phpaen/v18/i4/p044503_s1

  6. Picosecond green and deep ultraviolet pulses generated by a high-power 100 kHz thin-disk laser

    Czech Academy of Sciences Publication Activity Database

    Novák, Ondřej; Turčičová, Hana; Smrž, Martin; Miura, Taisuke; Endo, Akira; Mocek, Tomáš

    2016-01-01

    Roč. 41, č. 22 (2016), s. 5210-5213 ISSN 0146-9592 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk LO1602; GA MŠk EE2.3.30.0057 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : lasers * diode-pumped * ultraviolet Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.416, year: 2016

  7. Photocatalytic activity of Ag3PO4 nanoparticle/TiO2 nanobelt heterostructures

    Science.gov (United States)

    Liu, Ruoyu; Hu, Peiguang; Chen, Shaowei

    2012-10-01

    Heterostructures based on Ag3PO4 nanoparticles and TiO2 nanobelts were prepared by a coprecipitation method. The crystalline structures were characterized by X-ray diffraction measurements. Electron microscopic studies showed that the Ag3PO4 nanoparticles and TiO2 nanobelts were in intimate contact which might be exploited to facilitate charge transfer between the two semiconductor materials. In fact, the heterostructures exhibited markedly enhanced photocatalytic activity as compared with unmodified TiO2 nanobelts or commercial TiO2 colloids in the photodegradation of methyl orange under UV irradiation. This was accounted for by the improved efficiency of interfacial charge separation thanks to the unique alignments of their band structures. Remarkably, whereas the photocatalytic activity of the heterostructure was comparable to that of Ag3PO4 nanoparticles alone, the heterostructures exhibited significantly better stability and reusability in repeated tests than the Ag3PO4 nanoparticles.

  8. Organic p-n heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  9. Giant magnetoelectric effect in pure manganite-manganite heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Paul, Sanjukta; Pankaj, Ravindra; Yarlagadda, Sudhakar; Majumdar, Pinaki; Littlewood, Peter B.

    2017-11-01

    Obtaining strong magnetoelectric couplings in bulk materials and heterostructures is an ongoing challenge. We demonstrate that manganite heterostructures of the form (Insulator) /(LaMnO3)(n)/Interface/(CaMnO3)(n)/(Insulator) show strong multiferroicity in magnetic manganites where ferroelectric polarization is realized by charges leaking from LaMnO3 to CaMnO3 due to repulsion. Here, an effective nearest-neighbor electron-electron (electron-hole) repulsion (attraction) is generated by cooperative electron-phonon interaction. Double exchange, when a particle virtually hops to its unoccupied neighboring site and back, produces magnetic polarons that polarize antiferromagnetic regions. Thus a striking giant magnetoelectric effect ensues when an external electrical field enhances the electron leakage across the interface.

  10. Proton emission from thin hydrogenated targets irradiated by laser pulses at 10.sup.16./sup. W/cm.sup.2./sup

    Czech Academy of Sciences Publication Activity Database

    Torrisi, L.; Giuffrida, L.; Cutroneo, M.; Cirrone, P.; Picciotto, A.; Krása, Josef; Margarone, Daniele; Velyhan, Andriy; Láska, Leoš; Ullschmied, Jiří; Wolowski, J.; Badziak, J.; Rosinski, M.

    2012-01-01

    Roč. 83, č. 2 (2012), "02B315-1"-"02B315-4" ISSN 0034-6748 R&D Projects: GA MŠk(CZ) 7E09092; GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : harmonics * hydrogenation * iodine * ion emission * laser beam effects * plasma materials processing * proton production * semiconductor counters Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.602, year: 2012

  11. Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

    Directory of Open Access Journals (Sweden)

    Buwen Cheng

    2013-05-01

    Full Text Available The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA and peak pairs analysis (PPA, respectively. The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.

  12. GaAs FETs and novel heteroepitaxial quaternary lasers grown on InP substrates by organometallic chemical vapor deposition

    International Nuclear Information System (INIS)

    Lo, Y.H.; Bhat, R.; Chang-Hasnain, C.; Caneau, C.; Zah, C.E.; Lee, T.P.

    1988-01-01

    This paper reports the GaAs MESFETs and 1.3μm buried hetero-structure lasers with AlGaAs/GaAs lateral confinement layers simultaneously grown by OMCVD and fabricated on InP structures. The 1μm recessed gate MESFET has a transconductance of 220 mS/mm and the novel structured laser has a CW threshold current of 45 mA. The heteroepitaxy technology and devices show great promises for long wavelength opto-electronic integrated circuits

  13. BWR-spent fuel transport and storage with the TN trademark 9/4 and TN trademark 24BH casks

    International Nuclear Information System (INIS)

    Wattez, L.; Marguerat, Y.; Hoesli, C.

    2004-01-01

    The Swiss Nuclear Utilities have started in 2001 to store spent fuel in dry metallic dual-purpose casks in ZWILAG, the Swiss interim storage facility. BKW FMB Energy Ltd., as Muehleberg Nuclear Power Plant owner, is involved in this process and has selected to store its spent fuel, a new high capacity dual-purpose cask, the TN trademark 24BH. For the transport in a medium size cask, COGEMA LOGISTICS has developed a new cask, the TN trademark 9/4, to replace the NTL9 cask, which performed numerous transports of BWR spent fuel in the past decades. Licensed IAEA 1996, the TN trademark 9/4 is a 40 ton transport cask, for 7 BWR high burn-up spent fuel assemblies. The spent fuel assemblies can be transferred in the ZWILAG hot cell in the TN trademark 24BH cask. The first use of these casks took place in 2003. Ten TN trademark 9/4 transports were performed, and one TN trademark 24BH was loaded. After a brief presentation of the operational aspects, the paper will focus on the TN trademark 24BH high capacity dual purpose cask, the TN trademark 9/4 transport cask and describe in detail their characteristics and possibilities

  14. Nano-structuring of solid surface by extreme ultraviolet Ar8+ laser

    Czech Academy of Sciences Publication Activity Database

    Koláček, Karel; Štraus, Jaroslav; Schmidt, Jiří; Frolov, Oleksandr; Prukner, Václav; Shukurov, A.; Holý, V.; Sobota, Jaroslav; Fořt, Tomáš

    2012-01-01

    Roč. 30, č. 1 (2012), s. 57-63 ISSN 0263-0346. [International Conference on the Frontiers of Plasma Physics and Technology/5./. Singapore , 18.04.2011-22.04.2011] R&D Projects: GA MŠk LA08024; GA MŠk(CZ) LC528; GA AV ČR KAN300100702 Institutional research plan: CEZ:AV0Z20430508 Institutional support: RVO:68081731 ; RVO:61389021 Keywords : Ablation by EUV radiation * application of Ar8+ laser * nano-patterning by EUV radiation * , nano-structuring by EUV radiation Subject RIV: BL - Plasma and Gas Discharge Physics; BH - Optics, Masers, Lasers (UPT-D) Impact factor: 2.016, year: 2012

  15. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  16. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala; Alshareef, Husam N.; Schwingenschlö gl, Udo

    2016-01-01

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical

  17. Electronic structure robustness and design rules for 2D colloidal heterostructures

    Science.gov (United States)

    Chu, Audrey; Livache, Clément; Ithurria, Sandrine; Lhuillier, Emmanuel

    2018-01-01

    Among the colloidal quantum dots, 2D nanoplatelets present exceptionally narrow optical features. Rationalizing the design of heterostructures of these objects is of utmost interest; however, very little work has been focused on the investigation of their electronic properties. This work is organized into two main parts. In the first part, we use 1D solving of the Schrödinger equation to extract the effective masses for nanoplatelets (NPLs) of CdSe, CdS, and CdTe and the valence band offset for NPL core/shell of CdSe/CdS. In the second part, using the determined parameters, we quantize how the spectra of the CdSe/CdS heterostructure get affected by (i) the application of an electric field and (ii) by the presence of a dull interface. We also propose design strategies to make the heterostructure even more robust.

  18. Uniform photoresponse in thermally oxidized Ni and MoS2 heterostructures

    International Nuclear Information System (INIS)

    Luo, Wei; Peng, Gang; Wang, Fei; Miao, Feng; Zhang, Xue-Ao; Qin, Shiqiao

    2017-01-01

    Non-uniform photocurrent is usually generated at the overlapped region of the heterostructures, and its potential applications may be hindered by the spatial uniformity issue of the device photoresponse. Here, nearly a uniform photoresponse at the overlapped region of the thermally oxidized Ni and molybdenum disulphide (MoS 2 ) heterostructures is obtained. Further characterizations reveal that several nanometers Ni is rightly under the NiO x layer formed at the surface of the film in the oxidation process. The heterostructures based on layered MoS 2 /NiO x /Ni with highly conductive bottom Ni show a high uniform photoresponse with an external quantum efficiency (EQE) of 1.4% at 532 nm. Moreover, successful integration of multiple devices suggests a great priority for such a structure for highly integrated uniform photodetectors. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Radical-source molecular beam epitaxy of ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sadofiev, Sergey

    2009-10-27

    This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

  20. Female and male attractiveness as depicted in the Vanaparvan of the Mahābhārata

    Directory of Open Access Journals (Sweden)

    Iwona MILEWSKA

    2015-06-01

    Full Text Available This paper deals with the bodily attractiveness of heroines and heroes, as described in one of the two most important epics of India. The basis for this analysis is the love stories and episodes included in the main plot of the Vanaparvan, the third book of the Mahābhārata. The stories from this book have been taken into consideration due to their numerous occurrences, which are a sufficient ground for generalizations. Many characteristic features of their protagonists are repeated in different sub‑stories. Also, the images of female and male characters, princesses, queens and kings are presented and discussed in detail. The external beauty of such female heroines as Damayantī, Sāvitrī, Sukanyā, Suśobhanā and Sitā; as well as the attractiveness of two semi‑goddesses, called Apsarases, are described and analysed. The names of the Apsarases discussed in the context of female beauty are Urvaśī and Menakā. Besides this, the image of an unnamed courtesan is discussed, as it is the most detailed description of a female character and probably follows the ideal of female beauty as shown in the Mahābhārata. As far as the male protagonists are concerned, the images of heroes such as Nala, Bhīma, Aśvapati, Rāma and Daśaratha are taken into consideration. The examples of male attractiveness also include features of the five main heroes of the Mahābhārata: the Paṇḍava brothers.

  1. Structural stability and decomposition of Mg(BH4)2 isomorphs - an ab initio free energy study

    DEFF Research Database (Denmark)

    Voss, Johannes; Hummelshøj, Jens Strabo; Lodziana, Z.

    2009-01-01

    We present the first comprehensive comparison between free energies, based on a phonon dispersion calculation within density functional theory, of theoretically predicted structures and the experimentally proposed a (P6(1)) and beta (Fddd) phases of the promising hydrogen storage material Mg(BH4...... of the unstable modes, we have obtained a new F222 structure, which has a lower energy than all previously experimentally and theoretically proposed phases of Mg( BH4) 2 and is free of imaginary eigenmodes. A new meta-stable high-density I4(1)/amd structure is also derived from the I (4) over bar m2 phase...

  2. Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

    Science.gov (United States)

    Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

    2018-01-01

    2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

  3. 1.3μm low threshold distributed feedback lasers for high bit-rate applications

    International Nuclear Information System (INIS)

    Artigue, C.; Louis, Y.; Padioleau, C.; Poingt, F.; Sigogne, D.; Starck, C.; Benoit, J.

    1985-01-01

    A low threshold current (≅ 30 mA) 1.3μm (InGaAsP) second order DFB laser with a ridge structure made by liquid phase epitaxy is reported. The low threshold results from: optimized heterostructure and grating profile, good tuning of the DFB wavelength with the peak gain wavelength, and the proper LPE regrowth conditions on the grating

  4. Synthesis and photoluminescence properties of comb-like CdS nanobelt/ZnO nanorod heterostructures

    International Nuclear Information System (INIS)

    Lan Changyong; Gong Jiangfeng; Liu Chunming

    2012-01-01

    Highlights: ► Comb-like CdS nanobelt/ZnO nanorod heterostructures were synthesized. ► ZnO nanorods epitaxially grew on the (1 0 0) surface of the CdS nanobelts along [1 0 0]. ► A preliminary growth mechanism was proposed. - Abstract: Comb-like CdS nanobelt/ZnO nanorod heterostructures were synthesized by a two-stage method. X-ray diffractometer, scanning electron microscopy, transmission electron microscopy were used to characterize and analyze the as-synthesized products. The results demonstrate that the CdS nanobelt backbones grow along [2 1 0] and the ZnO nanorod branches epitaxially grow on the (0 0 1) surface of the CdS nanobelt with a growth direction of [0 0 1]. The as-prepared heterostructures exhibit an important feature of single-crystallinity. At room temperature, the comb-like CdS nanobelt/ZnO nanorod heterostructures show strong green emission.

  5. Modulation of NO and ROS production by AdiNOS transduced vascular cells through supplementation with L-Arg and BH4: implications for gene therapy of restenosis.

    Science.gov (United States)

    Forbes, Scott P; Alferiev, Ivan S; Chorny, Michael; Adamo, Richard F; Levy, Robert J; Fishbein, Ilia

    2013-09-01

    Gene therapy with viral vectors encoding for NOS enzymes has been recognized as a potential therapeutic approach for the prevention of restenosis. Optimal activity of iNOS is dependent on the intracellular availability of L-Arg and BH4 via prevention of NOS decoupling and subsequent ROS formation. Herein, we investigated the effects of separate and combined L-Arg and BH4 supplementation on the production of NO and ROS in cultured rat arterial smooth muscle and endothelial cells transduced with AdiNOS, and their impact on the antirestenotic effectiveness of AdiNOS delivery to balloon-injured rat carotid arteries. Supplementation of AdiNOS transduced endothelial and vascular smooth muscle cells with L-Arg (3.0 mM), BH4 (10 μM) and especially their combination resulted in a significant increase in NO production as measured by nitrite formation in media. Formation of ROS was dose-dependently increased following transduction with increasing MOIs of AdiNOS. Exposure of RASMC to AdiNOS tethered to meshes via a hydrolyzable cross-linker, modeling viral delivery from stents, resulted in increased ROS production, which was decreased by supplementation with BH4 but not L-Arg or L-Arg/BH4. Enhanced cell death, caused by AdiNOS transduction, was also preventable with BH4 supplementation. In the rat carotid model of balloon injury, intraluminal delivery of AdiNOS in BH4-, L-Arg-, and especially in BH4 and L-Arg supplemented animals was found to significantly enhance the antirestenotic effects of AdiNOS-mediated gene therapy. Fine-tuning of iNOS function by L-Arg and BH4 supplementation in the transduced vasculature augments the therapeutic potential of gene therapy with iNOS for the prevention of restenosis. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

  6. Spin-orbit controlled capacitance of a polar heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Steffen, Kevin; Kopp, Thilo [Center for Electronic Correlations and Magnetism, EP VI, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany); Loder, Florian [Center for Electronic Correlations and Magnetism, EP VI and TP III, Institute of Physics, University of Augsburg, 86135 Augsburg (Germany)

    2015-07-01

    Oxide heterostructures with polar films display special electronic properties, such as the electronic reconstruction at their internal interfaces with the formation of two-dimensional metallic states. Moreover, the electrical field from the polar layers is inversion-symmetry breaking and may generate a strong Rashba spin-orbit coupling (RSOC) in the interfacial electronic system. We investigate the capacitance of a heterostructure in which a strong RSOC at a metallic interface is controlled by the electric field of a surface electrode. Such a structure is for example given by a LaAlO{sub 3} film on a SrTiO{sub 3} substrate which is gated by a top electrode. We find that due to a strong RSOC the capacitance can be larger than the classical geometric value.

  7. Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

    Czech Academy of Sciences Publication Activity Database

    Margarone, Daniele; Krása, Josef; Giuffrida, L.; Picciotto, A.; Torrisi, L.; Nowak, T.; Musumeci, P.; Velyhan, Andriy; Prokůpek, Jan; Láska, Leoš; Mocek, Tomáš; Ullschmied, Jiří; Rus, Bedřich

    2011-01-01

    Roč. 109, č. 10 (2011), "103302-1"-"103302-8" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GAP205/11/1165; GA MŠk(CZ) 7E09092 Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z20430508 Keywords : aluminium * chemical sensors * diamond * electrostatics * iodine * ion beams * thin films * lasers * time of flight spectrometers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.168, year: 2011 http://jap.aip.org/ resource /1/japiau/v109/i10/p103302_s1

  8. The deprotonation energies of BH{sub 5} and AlH{sub 5}: Comparisons to GaH{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Speakman, Lucas D. [Center for Computational Chemistry, University of Georgia, 1004 Cedar Street, Athens, GA 30602-2556 (United States)], E-mail: speakman@ccqc.uga.edu; Turney, Justin M. [Center for Computational Chemistry, University of Georgia, 1004 Cedar Street, Athens, GA 30602-2556 (United States); Schaefer, Henry F. [Center for Computational Chemistry, University of Georgia, 1004 Cedar Street, Athens, GA 30602-2556 (United States)

    2007-01-08

    Hypercoordinate boron is most unusual, leading to considerable theoretical and experimental research on the parent BH{sub 5} molecule. The deprotonation energies of BH{sub 5} and the related molecules AlH{sub 5} and GaH{sub 5} have been of particular interest. Here the energy differences for XH{sub 5}->XH{sub 4}{sup -}+H(X=BandAl) are computed to be 332.4 and 326.3kcalmol{sup -1}, respectively, with an aug-cc-pVQZ basis set at the CCSD(T) level of theory. Vibrational frequencies for BH{sub 4}{sup -} and AlH{sub 4}{sup -} are also reported as 1098, 1210, 2263, and 2284cm{sup -1} and 760, 779, 1658, and 1745cm{sup -1}, respectively, again at the CCSD(T) aug-cc-pVQZ level of theory. Comparisons with the valence isoelectronic GaH{sub 5} molecule are made.

  9. Tunable intraparticle frameworks for creating complex heterostructured nanoparticle libraries

    Science.gov (United States)

    Fenton, Julie L.; Steimle, Benjamin C.; Schaak, Raymond E.

    2018-05-01

    Complex heterostructured nanoparticles with precisely defined materials and interfaces are important for many applications. However, rationally incorporating such features into nanoparticles with rigorous morphology control remains a synthetic bottleneck. We define a modular divergent synthesis strategy that progressively transforms simple nanoparticle synthons into increasingly sophisticated products. We introduce a series of tunable interfaces into zero-, one-, and two-dimensional copper sulfide nanoparticles using cation exchange reactions. Subsequent manipulation of these intraparticle frameworks yielded a library of 47 distinct heterostructured metal sulfide derivatives, including particles that contain asymmetric, patchy, porous, and sculpted nanoarchitectures. This generalizable mix-and-match strategy provides predictable retrosynthetic pathways to complex nanoparticle features that are otherwise inaccessible.

  10. Influence of Au Nanoparticle Shape on Au@Cu2O Heterostructures

    OpenAIRE

    Zhu, Jie; Lu, Na; Chen, Wei; Kong, Lina; Yang, Yun; Ma, Dekun; Huang, Shaoming

    2015-01-01

    Synthesis of metal-semiconductor heterostructures may allow the combination of function of the corresponding components and/or the enhanced performance resulting from the interactions between all the components. In this paper, Au@Cu2O core-shell heterostructures are prepared by a seed-growth method, using different-shaped Au nanocrystals as the seeds such as nanorods, octahedra, decahedra, dots, and nanocubes. The results revealed that the final structure of Au@Cu2O was greatly influenced by ...

  11. Design lateral heterostructure of monolayer ZrS2 and HfS2 from first principles calculations

    Science.gov (United States)

    Yuan, Junhui; Yu, Niannian; Wang, Jiafu; Xue, Kan-Hao; Miao, Xiangshui

    2018-04-01

    The successful fabrication of two-dimensional lateral heterostructures (LHS's) has opened up unprecedented opportunities in material science and device physics. It is therefore highly desirable to search for more suitable materials to create such heterostructures for next-generation devices. Here, we investigate a novel lateral heterostructure composed of monolayer ZrS2 and HfS2 based on density functional theory. The phonon dispersion and ab initio molecular dynamics analysis indicate its good kinetic and thermodynamic stability. Remarkably, we find that these lateral heterostructures exhibit an indirect to direct bandgap transition, in contrast to the intrinsic indirect bandgap nature of ZrS2 and HfS2. The type-II alignment and chemical bonding across the interline have also been revealed. The tensile strain is proved to be an efficient way to modulate the band structure. Finally, we further discuss other three stable lateral heterostructures: (ZrSe2)2(HfSe2)2 LHS, (ZrS2)2(ZrSe2)2 LHS and (HfS2)2(HfSe2)2 LHS. Generally, the lateral heterostructures of monolayer ZrS2 and HfS2 are of excellent electrical properties, and may find potential applications for future electronic devices.

  12. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

    Science.gov (United States)

    Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

    2018-01-01

    Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the

  13. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  14. Role of the temperature dynamics in formation of nanopatterns upon single femtosecond laser pulses on gold

    Czech Academy of Sciences Publication Activity Database

    Gurevich, E.L.; Levy, Yoann; Gurevich, S.V.; Bulgakova, Nadezhda M.

    2017-01-01

    Roč. 95, č. 5 (2017), s. 1-12, č. článku 054305. ISSN 2469-9950 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086; GA MŠk EF15_003/0000445 Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445 Institutional support: RVO:68378271 Keywords : periodic surface-structures * pattern-formation * ablation * metals * irradiation * spallation Subject RIV: BH - Optics, Masers, Laser s OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 3.836, year: 2016

  15. First-principles determination of the ground-state structure of Mg(BH4)(2)

    DEFF Research Database (Denmark)

    Caputo, R.; Tekin, Adem; Sikora, W.

    2009-01-01

    The ground-state structure of magnesium tetrahydroborate, Mg(BH4)(2), is still under debate. The experimentally and theoretically proposed structures mismatch, and even among the computationally determined structures a disagreement still exists. The main debated question is related to the lattice...

  16. The effect of annealing atmosphere on magnetoelectric coupling of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3} layered heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tingxian, E-mail: wxlltx@126.com [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455002 (China); Wang, Hongwei [School of Mathematics and Statistics, Anyang Normal University, Anyang 455002 (China); Ju, Lin; Tang, Zhenjie; Ma, Dongwei [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455002 (China); Li, Kuoshe [National Engineering Research Central for Rare earth Materials, Beijing 100088 (China)

    2015-10-15

    The epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3} (LSMO/BTO) layered heterostructure was grown on (001) oriented LaAlO{sub 3} single-crystal substrate by pulsed laser deposition. Our results showed that the in-situ annealing process in oxygen made the LSMO/BTO interface possess higher oxygen content than that of the one annealing in vacuum, which leaded to the LSMO film presented higher magnetic permeability and higher saturated magnetization. The P–E hystersis loop only could be detected in the sample annealing in oxygen. The ME voltage coefficient of the LSMO/BTO heterostructure annealing in oxygen was higher than that of the one annealing in vacuum, which suggested a more effective ME coupling. It was a combined effect of the two main ME coupling mechanisms, including strain mediation, and polarized carrier mediation.

  17. Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

    Science.gov (United States)

    Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

    2017-03-01

    The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

  18. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

    Science.gov (United States)

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-04-01

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

  19. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

    2015-01-01

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  20. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).