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Sample records for heterojunction device based

  1. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

    Science.gov (United States)

    Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

    2016-11-01

    Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

  2. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

    Science.gov (United States)

    Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

    2016-01-01

    Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research. PMID:27819264

  3. Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials.

    Science.gov (United States)

    Shim, Jaewoo; Jo, Seo-Hyeon; Kim, Minwoo; Song, Young Jae; Kim, Jeehwan; Park, Jin-Hong

    2017-06-27

    Multivalued logic (MVL) devices/circuits have received considerable attention because the binary logic used in current Si complementary metal-oxide-semiconductor (CMOS) technology cannot handle the predicted information throughputs and energy demands of the future. To realize MVL, the conventional transistor platform needs to be redesigned to have two or more distinctive threshold voltages (V TH s). Here, we report a finding: the photoinduced drain current in graphene/WSe 2 heterojunction transistors unusually decreases with increasing gate voltage under illumination, which we refer to as the light-induced negative differential transconductance (L-NDT) phenomenon. We also prove that such L-NDT phenomenon in specific bias ranges originates from a variable potential barrier at a graphene/WSe 2 junction due to a gate-controllable graphene electrode. This finding allows us to conceive graphene/WSe 2 -based MVL logic circuits by using the I D -V G characteristics with two distinctive V TH s. Based on this finding, we further demonstrate a light-triggered ternary inverter circuit with three stable logical states (ΔV out of each state <0.05 V). Our study offers the pathway to substantialize MVL systems.

  4. Enhanced photoelectrochemical activity in all-oxide heterojunction devices based on correlated "metallic" oxides.

    Science.gov (United States)

    Apgar, Brent A; Lee, Sungki; Schroeder, Lauren E; Martin, Lane W

    2013-11-20

    n-n Schottky, n-n ohmic, and p-n Schottky heterojunctions based on TiO2 /correlated "metallic" oxide couples exhibit strong solar-light absorption driven by the unique electronic structure of the "metallic" oxides. Photovoltaic and photocatalytic responses are driven by hot electron injection from the "metallic" oxide into the TiO2 , enabling new modalities of operation for energy systems. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Fabrication and study of sol-gel ZnO films for use in Si-based heterojunction photovoltaic devices

    Directory of Open Access Journals (Sweden)

    Daniya Mukhamedshina

    2017-12-01

    Full Text Available This paper considers the use of zinc oxide thin films prepared via the sol-gel route as an n-type layer in heterojunction ZnO/Si solar cells. The ZnO films were prepared via a simple spin-coating technique using zinc acetate dihydrate as a zinc precursor, isopropanol as a solvent and monoethanolamine as a stabilizing agent. Optical, structural and morphological properties of ZnO were investigated for thin films grown from sol-gel solutions with different concentrations both on glass and silicon substrates. As such, a distribution of crystallite sizes and surface topology parameters corresponding to various zinc acetate dihydrate concentrations were obtained to elucidate optimal film deposition conditions. Correlation between thin film morphology and structural characteristics of ZnO thin films was made based on atomic-force microscopy studies. Finally, our results on fabrication, characterization and simulation of ZnO/Si heterojunctions for use as photovoltaic devices are presented. Although noticeable rectifying and photovoltaic properties were observed for Al/Si/ZnO/Ti/Au devices, there appears to exist a considerable room for device improvement with simulation studies suggesting that efficiencies of the order of 24% may be obtained for devices with optimal silicon wafer passivation, i.e. with lifetimes of the order of 1000 μs.

  6. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  7. Graphene-based heterojunction photocatalysts

    Science.gov (United States)

    Li, Xin; Shen, Rongchen; Ma, Song; Chen, Xiaobo; Xie, Jun

    2018-02-01

    Due to their unique physicochemical, optical and electrical properties, 2D semimetallic or semiconducting graphene has been extensively utilized to construct highly efficient heterojunction photocatalysts for driving a variety of redox reactions under proper light irradiation. In this review, we carefully addressed the fundamental mechanism of heterogeneous photocatalysis, fundamental properties and advantages of graphene in photocatalysis, and classification and comparison of graphene-based heterojunction photocatalysts. Subsequently, we thoroughly highlighted and discussed various graphene-based heterojunction photocatalysts, including Schottky junctions, Type-II heterojunctions, Z-scheme heterojunctions, Van der Waals heterostructures, in plane heterojunctions and multicomponent heterojunctions. Several important photocatalytic applications, such as photocatalytic water splitting (H2 evolution and overall water splitting), degradation of pollutants, carbon dioxide reduction and bacteria disinfection, are also summarized. Through reviewing the important advances on this topic, it may inspire some new ideas for exploiting highly effective graphene-based heterojunction photocatalysts for a number of applications in photocatlysis and other fields, such as photovoltaic, (photo)electrocatalysis, lithium battery, fuel cell, supercapacitor and adsorption separation.

  8. Bulk Heterojunction versus Diffused Bilayer: The Role of Device Geometry in Solution p-Doped Polymer-Based Solar Cells.

    Science.gov (United States)

    Loiudice, Anna; Rizzo, Aurora; Biasiucci, Mariano; Gigli, Giuseppe

    2012-07-19

    We exploit the effect of molecular p-type doping of P3HT in diffused bilayer (DB) polymer solar cells. In this alternative device geometry, the p-doping is accomplished in solution by blending the F4-TCNQ with P3HT. The p-doping both increases the film conductivity and reduces the potential barrier at the interface with the electrode. This results in an excellent power conversion efficiency of 4.02%, which is an improvement of ∼48% over the p-doped standard bulk heterojunction (BHJ) device. Combined VOC-light intensity dependence measurements and Kelvin probe force microscopy reveal that the DB device configuration is particularly advantageous, if compared to the conventional BHJ, because it enables optimization of the donor and acceptor layers independently to minimize the effect of trapping and to fully exploit the improved transport properties.

  9. Cohesion and device reliability in organic bulk heterojunction photovoltaic cells

    KAUST Repository

    Brand, Vitali

    2012-04-01

    The fracture resistance of P3HT:PC 60BM-based photovoltaic devices are characterized using quantitative adhesion and cohesion metrologies that allow identification of the weakest layer or interface in the device structure. We demonstrate that the phase separated bulk heterojunction layer is the weakest layer and report quantitative cohesion values which ranged from ∼1 to 20 J m -2. The effects of layer thickness, composition, and annealing treatments on layer cohesion are investigated. Using depth profiling and X-ray photoelectron spectroscopy on the resulting fracture surfaces, we examine the gradient of molecular components through the thickness of the bulk heterojunction layer. Finally, using atomic force microscopy we show how the topography of the failure path is related to buckling of the metal electrode and how it develops with annealing. The research provides new insights on how the molecular design, structure and composition affect the cohesive properties of organic photovoltaics. © 2011 Elsevier B.V. All rights reserved.

  10. Fast-Response Photonic Device Based on Organic-Crystal Heterojunctions Assembled into a Vertical-Yet-Open Asymmetric Architecture.

    Science.gov (United States)

    Zhang, Lei; Pavlica, Egon; Zhong, Xiaolan; Liscio, Fabiola; Li, Songlin; Bratina, Gvido; Orgiu, Emanuele; Samorì, Paolo

    2017-03-01

    Crystalline dioctyl-3,4,9,10-perylenedicarboximide nanowires and 6,13-bis(triisopropylsilylethynyl) pentacene microplates are integrated into a vertical-yet-open asymmetrical heterojunction for the realization of a high-performance organic photovoltaic detector, which shows fast photoresponse, ultrahigh signal-to-noise ratio, and high sensitivity to weak light. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

    KAUST Repository

    Chavali, Raghu V. K.

    2018-01-15

    The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent, with Kaneka setting the world\\'s silicon solar cell efficiency record of 26.63% using silicon heterojunction contacts in an interdigitated configuration. Although passivating-contact solar cells are remarkably efficient, their underlying device physics is not yet completely understood, not in the least because they are constructed from diverse materials that may introduce electronic barriers in the current flow. To bridge this gap in understanding, we explore the device physics of passivating contact silicon heterojunction (SHJ) solar cells. Here, we identify the key properties of heterojunctions that affect cell efficiency, analyze the dependence of key heterojunction properties on carrier transport under light and dark conditions, provide a self-consistent multiprobe approach to extract heterojunction parameters using several characterization techniques (including dark J-V, light J-V, C-V, admittance spectroscopy, and Suns-Voc), propose design guidelines to address bottlenecks in energy production in SHJ cells, and develop a process-to-module modeling framework to establish the module\\'s performance limits. We expect that our proposed guidelines resulting from this multiscale and self-consistent framework will improve the performance of future SHJ cells as well as other passivating contact-based solar cells.

  12. Copper oxide/N-silicon heterojunction photovoltaic device

    Science.gov (United States)

    Feng, Tom; Ghosh, Amal K.

    1982-01-01

    A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

  13. Reporting performance in MoS{sub 2}–TiO{sub 2} bilayer and heterojunction films based dye-sensitized photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    He, Zuoli, E-mail: wandaohzl@163.com; Que, Wenxiu, E-mail: wxque@mail.xjtu.edu.cn; Xing, Yonglei; Liu, Xiaobin

    2016-07-05

    Three types of bilayer and heterojunction films photoanodes were designed and fabricated from green synthesized MoS{sub 2} and TiO{sub 2} nanoparticles (NPs), and then the dye-sensitized solar cells based on these various films photoanodes were investigated. Results demonstrated that layered semiconductor MoS{sub 2} could be a viable material candidate for solar cell applications due to its superior photoelectric characteristics. The DSSCs from the MoS{sub 2}@TiO{sub 2} heterojunction film photoanode exhibit the highest solar energy conversion efficiency of 6.02% under AM 1.5G simulated solar irradiation, which is 1.5 times higher than that of the cell from pure TiO{sub 2} film photoanode. MoS{sub 2}–TiO{sub 2} heterojunction at the interface helps MoS{sub 2} NPs to efficiently collect the photo-injected electrons from TiO{sub 2} NPs, thus reduce charge recombination at both the NPs-electrolyte and NPs-dye interfaces. These advantages together with collecting or transferring injected electrons abilities by combining the improved light absorption and the large dye-loading capacity of such structural NPs films, rendering the MoS{sub 2}–TiO{sub 2} composite photoelectrode superior potential for DSSCs applications. - Highlights: • MoS{sub 2} and TiO{sub 2} NPs were synthesized via green process using rape pollen grains as bio-templates. • DSSCs based on these various bilayer and heterojunction films photoanodes were investigated. • Enhanced η of MoS{sub 2}@TiO{sub 2} based DSSCs was related to its strong light adsorption ability. • The mechanism of electron transport in these various films photoanodes was proposed.

  14. Transparent Cu4O3/ZnO heterojunction photoelectric devices

    Science.gov (United States)

    Kim, Hong-Sik; Yadav, Pankaj; Patel, Malkeshkumar; Kim, Joondong; Pandey, Kavita; Lim, Donggun; Jeong, Chaehwan

    2017-12-01

    The present article reports the development of flexible, self-biased, broadband, high speed and transparent heterojunction photodiode, which is essentially important for the next generation electronic devices. We grow semitransparent p-type Cu4O3 using the reactive sputtering method at room temperature. The structural and optical properties of the Cu4O3 film were investigated by using the X-ray diffraction and UV-visible spectroscopy, respectively. The p-Cu4O3/n-ZnO heterojunction diode under dark condition yields rectification behavior with an extremely low saturation current value of 1.8 × 10-10 A and a zero bias photocurrent under illumination condition. The transparent p-Cu4O3/n-ZnO heterojunction photodetector can be operated without an external bias, due to the light-induced voltage production. The metal oxide heterojunction based on Cu4O3/ZnO would provide a route for the transparent and flexible photoelectric devices, including photodetectors and photovoltaics.

  15. GaAs integrated circuits and heterojunction devices

    Science.gov (United States)

    Fowlis, Colin

    1986-06-01

    The state of the art of GaAs technology in the U.S. as it applies to digital and analog integrated circuits is examined. In a market projection, it is noted that whereas analog ICs now largely dominate the market, in 1994 they will amount to only 39 percent vs. 57 percent for digital ICs. The military segment of the market will remain the largest (42 percent in 1994 vs. 70 percent today). ICs using depletion-mode-only FETs can be constructed in various forms, the closest to production being BFL or buffered FET logic. Schottky diode FET logic - a lower power approach - can reach higher complexities and strong efforts are being made in this direction. Enhancement type devices appear essential to reach LSI and VLSI complexity, but process control is still very difficult; strong efforts are under way, both in the U.S. and in Japan. Heterojunction devices appear very promising, although structures are fairly complex, and special fabrication techniques, such as molecular beam epitaxy and MOCVD, are necessary. High-electron-mobility-transistor (HEMT) devices show significant performance advantages over MESFETs at low temperatures. Initial results of heterojunction bipolar transistor devices show promise for high speed A/D converter applications.

  16. CuPc/C60 heterojunction thin film optoelectronic devices

    International Nuclear Information System (INIS)

    Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

    2010-01-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

  17. Different Device Architectures for Bulk-Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Getachew Adam

    2016-08-01

    Full Text Available We report different solar cell designs which allow a simple electrical connection of subsequent devices deposited on the same substrate. By arranging so-called standard and inverted solar-cell architectures next to each other, a serial connection of the two devices can easily be realized by a single compound electrode. In this work, we tested different interfacial layer materials like polyethylenimine (PEI and PEDOT:PSS, and silver as a non-transparent electrode material. We also built organic light emitting diodes applying the same device designs demonstrating the versatility of applied layer stacks. The proposed design should allow the preparation of organic bulk-heterojunction modules with minimized photovoltaically inactive regions at the interconnection of individual devices.

  18. Strategies for increasing the efficiency of heterojunction organic solar cells: material selection and device architecture.

    Science.gov (United States)

    Heremans, Paul; Cheyns, David; Rand, Barry P

    2009-11-17

    Thin-film blends or bilayers of donor- and acceptor-type organic semiconductors form the core of heterojunction organic photovoltaic cells. Researchers measure the quality of photovoltaic cells based on their power conversion efficiency, the ratio of the electrical power that can be generated versus the power of incident solar radiation. The efficiency of organic solar cells has increased steadily in the last decade, currently reaching up to 6%. Understanding and combating the various loss mechanisms that occur in processes from optical excitation to charge collection should lead to efficiencies on the order of 10% in the near future. In organic heterojunction solar cells, the generation of photocurrent is a cascade of four steps: generation of excitons (electrically neutral bound electron-hole pairs) by photon absorption, diffusion of excitons to the heterojunction, dissociation of the excitons into free charge carriers, and transport of these carriers to the contacts. In this Account, we review our recent contributions to the understanding of the mechanisms that govern these steps. Starting from archetype donor-acceptor systems of planar small-molecule heterojunctions and solution-processed bulk heterojunctions, we outline our search for alternative materials and device architectures. We show that non-planar phthalocynanines have appealing absorption characteristics but also have reduced charge carrier transport. As a result, the donor layer needs to be ultrathin, and all layers of the device have to be tuned to account for optical interference effects. Using these optimization techniques, we illustrate cells with 3.1% efficiency for the non-planar chloroboron subphthalocyanine donor. Molecules offering a better compromise between absorption and carrier mobility should allow for further improvements. We also propose a method for increasing the exciton diffusion length by converting singlet excitons into long-lived triplets. By doping a polymer with a

  19. Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

    KAUST Repository

    Bruner, Christopher; Miller, Nichole C.; McGehee, Michael D.; Dauskardt, Reinhold H.

    2013-01-01

    The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

    KAUST Repository

    Bruner, Christopher

    2013-01-17

    The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Understanding triplet formation pathways in bulk heterojunction polymer : fullerene photovoltaic devices

    NARCIS (Netherlands)

    Tedla, B.; Zhu, F.; Cox, M.; Drijkoningen, J.; Manca, J.V.; Koopmans, B.; Goovaerts, E.

    2015-01-01

    Triplet exciton (TE) formation pathways are systematically investigated in prototype bulk heterojunction (BHJ) "super yellow" poly(p-phenylene vinylene) (SY-PPV) solar cell devices with varying fullerene compositions using complementary optoelectrical and electrically detected magnetic resonance

  2. Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

    Science.gov (United States)

    Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

    2014-04-22

    Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

  3. Electrical and optical characteristics of heterojunction devices composed of silicon nanowires and mercury selenide nanoparticle films on flexible plastics.

    Science.gov (United States)

    Yeo, Minje; Yun, Junggwon; Kim, Sangsig

    2013-09-01

    A pn heterojunction device based on p-type silicon (Si) nanowires (NWs) prepared by top-down method and n-type mercury selenide (HgSe) nanoparticles (NPs) synthesized by the colloidal method have been fabricated on a flexible plastic substrate. The synthesized HgSe NPs were analyzed through the effective mass approximation. The characteristics of the heterojunction device were examined and studied with the energy band diagram. The device showed typical diode characteristics with a turn-on voltage of 1.5 V and exhibited a high rectification ratio of 10(3) under relatively low forward bias. Under illumination of 633-nm-wavelength light, the device presented photocurrent efficiency of 117.5 and 20.1 nA/W under forward bias and reverse bias conditions, respectively. Moreover, the photocurrent characteristics of the device have been determined by bending of the plastic substrate upward and downward with strain of 0.8%. Even though the photocurrent efficiency has fluctuations during the bending cycles, the values are roughly maintained for 10(4) bending cycles. This result indicates that the fabricated heterojunction device has the potential to be applied as fundamental elements of flexible nanoelectronics.

  4. Vertical Stratification Engineering for Organic Bulk-Heterojunction Devices.

    Science.gov (United States)

    Huang, Liqiang; Wang, Gang; Zhou, Weihua; Fu, Boyi; Cheng, Xiaofang; Zhang, Lifu; Yuan, Zhibo; Xiong, Sixing; Zhang, Lin; Xie, Yuanpeng; Zhang, Andong; Zhang, Youdi; Ma, Wei; Li, Weiwei; Zhou, Yinhua; Reichmanis, Elsa; Chen, Yiwang

    2018-05-22

    High-efficiency organic solar cells (OSCs) can be produced through optimization of component molecular design, coupled with interfacial engineering and control of active layer morphology. However, vertical stratification of the bulk-heterojunction (BHJ), a spontaneous activity that occurs during the drying process, remains an intricate problem yet to be solved. Routes toward regulating the vertical separation profile and evaluating the effects on the final device should be explored to further enhance the performance of OSCs. Herein, we establish a connection between the material surface energy, absorption, and vertical stratification, which can then be linked to photovoltaic conversion characteristics. Through assessing the performance of temporary, artificial vertically stratified layers created by the sequential casting of the individual components to form a multilayered structure, optimal vertical stratification can be achieved. Adjusting the surface energy offset between the substrate results in donor and acceptor stabilization of that stratified layer. Further, a trade-off between the photocurrent generated in the visible region and the amount of donor or acceptor in close proximity to the electrode was observed. Modification of the substrate surface energy was achieved using self-assembled small molecules (SASM), which, in turn, directly impacted the polymer donor to acceptor ratio at the interface. Using three different donor polymers in conjunction with two alternative acceptors in an inverted organic solar cell architecture, the concentration of polymer donor molecules at the ITO (indium tin oxide)/BHJ interface could be increased relative to the acceptor. Appropriate selection of SASM facilitated a synchronized enhancement in external quantum efficiency and power conversion efficiencies over 10.5%.

  5. InN-based heterojunction photodetector with extended infrared response

    KAUST Repository

    Hsu, Lung-Hsing; Kuo, Chien-Ting; Huang, Jhih-Kai; Hsu, Shun-Chieh; Lee, Hsin-Ying; Kuo, Hao-Chung; Lee, Po-Tsung; Tsai, Yu-Lin; Hwang, Yi-Chia; Su, Chen-Feng; He, Jr-Hau; Lin, Shih-Yen; Cheng, Yuh-Jen; Lin, Chien-Chung

    2015-01-01

    © 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

  6. InN-based heterojunction photodetector with extended infrared response

    KAUST Repository

    Hsu, Lung-Hsing

    2015-11-21

    © 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

  7. The illustrated brief application of defect distribution model for heterojunction device by admittance spectroscopy

    International Nuclear Information System (INIS)

    Oylumluoglu, Gorkem; Kavasoglu, A. Sertap; Kavasoglu, Nese

    2012-01-01

    Highlights: ► Admittance data are used to determine shallow or deep energy levels in heterojunction device. ► We have suggested new equivalent circuit for heterojunction device to mimic the traps. ► The used analytical model is good formulation for display exact energetic location of traps. - Abstract: The dielectric properties of the devices can be studied by using admittance spectroscopy (AS). Majority carrier traps are experimentally analyzed without sophisticated mathematical manipulation. Experimental evidence obtained from AS of the devices may display several features that cannot be explained by the usual single RC circuits representing a depleted junction region and undepleted bulk elements. In this study, ac behavior of typical pn junction diode is simulated using temperature depended AS in a broad frequency range (5 Hz to 13 MHz). The frequency-dependent admittance data of typical pn junction has been discussed based on a discrete deep or shallow trap model. The analytically obtained frequency depended −dC/dω and tan δ (loss tangent) curves are peaks function. The position of the peak depends on the temperature and dc-bias. This peak position gives us information about deep or shallow trap states. The trapping time and trap energy levels can be deduced from −dC/dω versus ω or tan δ versus ω curves. This investigation shows that suitable complex admittance measurement data obtained during the capacitance–voltage measurement process are used to calculate the trapping time and energetic position of the traps. A theoretical analysis and computer simulation are presented in order to illustrate the nature of the trap and the technique by which accurate trapping time and energy position of the trap state can be obtained.

  8. Cohesion and device reliability in organic bulk heterojunction photovoltaic cells

    KAUST Repository

    Brand, Vitali; Bruner, Christopher; Dauskardt, Reinhold H.

    2012-01-01

    that the phase separated bulk heterojunction layer is the weakest layer and report quantitative cohesion values which ranged from ∼1 to 20 J m -2. The effects of layer thickness, composition, and annealing treatments on layer cohesion are investigated. Using

  9. CdO thin films based on the annealing temperature differences prepared by sol-gel method and their heterojunction devices

    Science.gov (United States)

    Soylu, M.; Yazici, T.

    2017-12-01

    Undoped CdO films were prepared on glass substrate and p-type silicon wafer using sol-gel spin coating method. The structural and optical properties of the films were investigated as a function of the annealing temperature. X-ray diffraction (XRD) patterns reveal that the films are formed from CdO with cubic crystal structure and (1 1 1) preferred orientation. It is seen that good crystallinity is due to the high annealing temperature. The surface morphology of the CdO films was found to be depending on the annealing temperature, showing cauliflower like structure. Optical band gaps for annealing temperature of 250 °C and 450 °C were found to be 2.49 eV and 2.27 eV, respectively, showing a decrease with raising temperature. Optics parameters such as extinction coefficient, refractive index, and surface-volume energy loss were determined with spectrophotometric analysis as a function of annealing temperature. CdO/p-Si heterojunction structure showed weak rectifying behavior. The diode parameters were found to be depending on annealing temperature. The results are encouraging to get better conjunction with CdO thin film component at optimize annealing temperature.

  10. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  11. Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

    Science.gov (United States)

    Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

    2014-09-10

    Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

  12. Electrical and optical properties of TCO-Cu2O heterojunction devices

    International Nuclear Information System (INIS)

    Tanaka, Hideki; Shimakawa, Takahiro; Miyata, Toshihiro; Sato, Hirotoshi; Minami, Tadatsugu

    2004-01-01

    This report describes the electrical and photovoltaic properties in heterojunction devices consisting of a cuprous oxide (Cu 2 O) sheet and a transparent conducting oxide (TCO) thin film, such as In 2 O 3 , ZnO, In 2 O 3 :Sn (ITO), ZnO:Al (AZO) or AZO-ITO (AZITO) multicomponent oxide, prepared by pulsed laser deposition (PLD). Undoped In 2 O 3 -Cu 2 O heterojunctions prepared by PLD exhibited ohmic current-voltage (I-V) characteristics. The ZnO-Cu 2 O and AZO-Cu 2 O devices exhibited better rectifying I-V characteristics and photovoltaic properties than the ITO-Cu 2 O devices. It was found that the obtainable I-V characteristics and photovoltaic properties were considerably affected by the TCO film deposition conditions. An open-circuit voltage (V OC ) of 0.4 V, a short-circuit current density (J SC ) of 7.1 mA/cm 2 , a fill factor (F.F.) of 0.4 and an energy conversion efficiency (η) of 1.2% were obtained in an AZO-Cu 2 O device under AM2 solar illumination. The V OC , J SC , F.F. and η obtained in AZITO-Cu 2 O heterojunctions increased as the Zn/(Zn+In) atomic ratio was increased

  13. Materials and Devices Research of PPV-ZnO Nanowires for Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhang Xiao-Zhou

    2012-01-01

    Full Text Available Bulk heterojunction photovoltaic devices, which use the conjugated polymer poly(2-methoxyl-5-(2′-ethylhexyloxy-1,4-phenylenevinylene (MEH-PPV as the electron donor and crystalline ZnO nanowires as the electron acceptor, have been studied in this work. The ZnO nanowires were prepared through a chemical vapor deposition mechanism. The dissolved MEH-PPV polymer was spin-coated onto the nanowires. The scanning electron microscope images showed that the ZnO nanowires were covered with a single layer of the polymer, and these materials were used to design a heterojunction solar cell. This solar cell displayed improved performance compared with the devices that were made from only the MEH-PPV polymer. This observed improvement is correlated with the improved electron transport that is perpendicular to the plane of the film. A solar power conversion efficiency of 1.37% was achieved under an AM1.5 illumination.

  14. Carbazole functionalized isocyanide brushes in heterojunction photovoltaic devices

    NARCIS (Netherlands)

    Lim, E.; Gao, F.; Schwartz, E.; Schwartz, E.; Cornelissen, Jeroen Johannes Lambertus Maria; Nolte, R.J.M.; Rowan, A.E.; Greenham, N.C.; Do, L.M.

    2012-01-01

    In this work, carbazole-containing polyisocyanide (PIACz) brushes were used for photovoltaic devices. A photovoltaic device was fabricated on top of the brushes by spin-coating a suitable acceptor and evaporating an Al cathode. Devices with a poly(N-vinylcarbazole) (PVK) bulk polymer were also

  15. A photovoltaic self-powered gas sensor based on a single-walled carbon nanotube/Si heterojunction.

    Science.gov (United States)

    Liu, L; Li, G H; Wang, Y; Wang, Y Y; Li, T; Zhang, T; Qin, S J

    2017-12-07

    We present a novel photovoltaic self-powered gas sensor based on a p-type single-walled carbon nanotube (SWNT) and n-type silicon (n-Si) heterojunction. The energy from visible light suffices to drive the device owing to a built-in electric field (BEF) induced by the differences between the Fermi levels of SWNTs and n-Si.

  16. Photoemission characteristics of thin GaAs-based heterojunction photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Cheng; Zhang, Yijun, E-mail: zhangyijun423@126.com; Qian, Yunsheng [Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094 (China); Shi, Feng [Science and Technology on Low-Light-Level Night Vision Laboratory, Xi' an 710065 (China); Zou, Jijun [Engineering Research Center of Nuclear Technology Application (East China Institute of Technology), Ministry of Education, Nanchang 330013 (China); Zeng, Yugang [Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2015-01-14

    To better understand the different photoemission mechanism of thin heterojunction photocathodes, the quantum efficiency models of reflection-mode and transmission-mode GaAs-based heterojunction photocathodes are revised based on one-dimensional continuity equations, wherein photoelectrons generated from both the emission layer and buffer layer are taken into account. By comparison of simulated results between the revised and conventional models, it is found that the electron contribution from the buffer layer to shortwave quantum efficiency is closely related to some factors, such as the thicknesses of emission layer and buffer layer and the interface recombination velocity. Besides, the experimental quantum efficiency data of reflection-mode and transmission-mode AlGaAs/GaAs photocathodes are well fitted to the revised models, which confirm the applicability of the revised quantum efficiency models.

  17. Bulk heterojunction perovskite solar cells based on room temperature deposited hole-blocking layer: Suppressed hysteresis and flexible photovoltaic application

    Science.gov (United States)

    Chen, Zhiliang; Yang, Guang; Zheng, Xiaolu; Lei, Hongwei; Chen, Cong; Ma, Junjie; Wang, Hao; Fang, Guojia

    2017-05-01

    Perovskite solar cells have developed rapidly in recent years as the third generation solar cells. In spite of the great improvement achieved, there still exist some issues such as undesired hysteresis and indispensable high temperature process. In this work, bulk heterojunction perovskite-phenyl-C61-butyric acid methyl ester solar cells have been prepared to diminish hysteresis using a facile two step spin-coating method. Furthermore, high quality tin oxide films are fabricated using pulse laser deposition technique at room temperature without any annealing procedure. The as fabricated tin oxide film is successfully applied in bulk heterojunction perovskite solar cells as a hole blocking layer. Bulk heterojunction devices based on room temperature tin oxide exhibit almost hysteresis-free characteristics with power conversion efficiency of 17.29% and 14.0% on rigid and flexible substrates, respectively.

  18. High efficiency solid-state sensitized heterojunction photovoltaic device

    KAUST Repository

    Wang, Mingkui

    2010-06-01

    The high molar extinction coefficient heteroleptic ruthenium dye, NaRu(4,4′-bis(5-(hexylthio)thiophen-2-yl)-2,2′-bipyridine) (4-carboxylic acid-4′-carboxylate-2,2′-bipyridine) (NCS) 2, exhibits certified 5% electric power conversion efficiency at AM 1.5 solar irradiation (100 mW cm-2) in a solid-state dye-sensitized solar cell using 2,2′,7,7′-tetrakis-(N,N-di-pmethoxyphenylamine)-9, 9′-spirobifluorene (spiro-MeOTAD) as the organic hole-transporting material. This demonstration elucidates a class of photovoltaic devices with potential for low-cost power generation. © 2010 Elsevier Ltd. All rights reserved.

  19. High efficiency solid-state sensitized heterojunction photovoltaic device

    KAUST Repository

    Wang, Mingkui; Liu, Jingyuan; Cevey-Ha, Ngoc-Le; Moon, Soo-Jin; Liska, Paul; Humphry-Baker, Robin; Moser, Jacques-E.; Grä tzel, Carole; Wang, Peng; Zakeeruddin, Shaik M.

    2010-01-01

    The high molar extinction coefficient heteroleptic ruthenium dye, NaRu(4,4′-bis(5-(hexylthio)thiophen-2-yl)-2,2′-bipyridine) (4-carboxylic acid-4′-carboxylate-2,2′-bipyridine) (NCS) 2, exhibits certified 5% electric power conversion efficiency at AM 1.5 solar irradiation (100 mW cm-2) in a solid-state dye-sensitized solar cell using 2,2′,7,7′-tetrakis-(N,N-di-pmethoxyphenylamine)-9, 9′-spirobifluorene (spiro-MeOTAD) as the organic hole-transporting material. This demonstration elucidates a class of photovoltaic devices with potential for low-cost power generation. © 2010 Elsevier Ltd. All rights reserved.

  20. Bulk Heterojunction Solar Cell Devices Prepared with Composites of Conjugated Polymer and Zinc Oxide Nanorods

    Directory of Open Access Journals (Sweden)

    Nguyen Tam Nguyen Truong

    2017-01-01

    Full Text Available ZnO nanorods (Nrods with ~20–50 nm lengths were synthesized using an aqueous solution of zinc acetate and glacial acetic acid. Bulk heterojunction solar cells were fabricated with the structure of indium tin oxide (ITO/polyethylenedioxythiophene doped with polystyrene-sulfonic acid (PEDOT:PSS/ZnO-Nrods + polymer/electron transport layer (ETL/Al. Current density-voltage characterization of the resulting cells showed that, by adding an ETL and using polymers with a low band gap energy, the photoactive layer surface morphology and the device performance can be dramatically improved.

  1. RETRACTED: Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

    KAUST Repository

    Kramer, Illan J.; Pattantyus-Abraham, Andras G.; Barkhouse, Aaron R.; Wang, Xihua; Konstantatos, Gerasimos; Debnath, Ratan; Levina, Larissa; Raabe, Ines; Nazeeruddin, Md. K.; Grä tzel, Michael; Sargent, Edward H.

    2011-01-01

    Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum. © 2010 Elsevier B.V.

  2. Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

    International Nuclear Information System (INIS)

    Kramer, Illan J.; Pattantyus-Abraham, Andras G.; Barkhouse, Aaron R.; Wang, Xihua; Konstantatos, Gerasimos; Debnath, Ratan; Levina, Larissa; Raabe, Ines; Nazeeruddin, Md. K.; Graetzel, Michael; Sargent, Edward H.

    2011-01-01

    Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum.

  3. RETRACTED: Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

    KAUST Repository

    Kramer, Illan J.

    2011-08-01

    Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum. © 2010 Elsevier B.V.

  4. The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

    Science.gov (United States)

    Bovill, E.; Scarratt, N.; Griffin, J.; Yi, H.; Iraqi, A.; Buckley, A. R.; Kingsley, J. W.; Lidzey, D. G.

    2015-02-01

    We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC70BM, and incorporated the different HTL materials PEDOT:PSS, MoOx and V2O5. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T80 lifetime of 14 500 h.

  5. Recent Approaches to Controlling the Nanoscale Morphology of Polymer-Based Bulk-Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Abdulra'uf Lukman Bola

    2013-11-01

    Full Text Available The need for clean, inexpensive and renewable energy has increasingly turned research attention towards polymer photovoltaic cells. However, the performance efficiency of these devices is still low in comparison with silicon-based devices. The recent introduction of new materials and processing techniques has resulted in a remarkable increase in power-conversion efficiency, with a value above 10%. Controlling the interpenetrating network morphology is a key factor in obtaining devices with improved performance. This review focuses on the influence of controlled nanoscale morphology on the overall performance of bulk-heterojunction (BHJ photovoltaic cells. Strategies such as the use of solvents, solvent annealing, polymer nanowires (NWs, and donor–acceptor (D–A blend ratios employed to control the active-layer morphologies are all discussed.

  6. Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices

    Science.gov (United States)

    Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

    2018-02-01

    In the current work, a tunneling barrier device made of 20 nm thick Sb2Te3 layer deposited onto 500 nm thick CdS is designed and characterized. The design included a Yb metallic substrate and Ag point contact of area of 10-3 cm2. The heterojunction properties are investigated by means of x-ray diffraction and impedance spectroscopy techniques. It is observed that the coating of the Sb2Te3 onto the surface of CdS causes a further deformation to the already strained structure of hexagonal CdS. The designed energy band diagram for the CdS/Sb2Te3 suggests a straddling type of heterojunction with an estimated conduction and valence band offsets of 0.35 and 1.74 eV, respectively. In addition, the analysis of the capacitance-voltage characteristic curve revealed a depletion region width of 14 nm. On the other hand, the capacitance and conductivity spectra which are analyzed in the frequency domain of 0.001-1.80 GHz indicated that the conduction in the device is dominated by the quantum mechanical tunneling in the region below 0.26 GHz and by the correlated barrier hopping in the remaining region. While the modeling of the conductivity spectra allowed investigation of the density of states near Fermi levels and an average scattering time of 1.0 ns, the capacitance spectra exhibited resonance at 0.26 GHz followed by negative differential capacitance effect in the frequency domain of 0.26-1.8 GHz. Furthermore, the evaluation of the impedance and reflection coefficient spectra indicated the usability of these devices as wide range low pass filters with ideal values of voltage standing wave ratios.

  7. Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection

    Science.gov (United States)

    Nallatamby, Jean-Christophe; Abdelhadi, Khaled; Jacquet, Jean-Claude; Prigent, Michel; Floriot, Didier; Delage, Sylvain; Obregon, Juan

    2013-03-01

    Commercially available simulators present considerable advantages in performing accurate DC, AC and transient simulations of semiconductor devices, including many fundamental and parasitic effects which are not generally taken into account in house-made simulators. Nevertheless, while the TCAD simulators of the public domain we have tested give accurate results for the simulation of diffusion noise, none of the tested simulators perform trap-assisted GR noise accurately. In order to overcome the aforementioned problem we propose a robust solution to accurately simulate GR noise due to traps. It is based on numerical processing of the output data of one of the simulators available in the public-domain, namely SENTAURUS (from Synopsys). We have linked together, through a dedicated Data Access Component (DAC), the deterministic output data available from SENTAURUS and a powerful, customizable post-processing tool developed on the mathematical SCILAB software package. Thus, robust simulations of GR noise in semiconductor devices can be performed by using GR Langevin sources associated to the scalar Green functions responses of the device. Our method takes advantage of the accuracy of the deterministic simulations of electronic devices obtained with SENTAURUS. A Comparison between 2-D simulations and measurements of low frequency noise on InGaP-GaAs heterojunctions, at low as well as high injection levels, demonstrates the validity of the proposed simulation tool.

  8. Photovoltaic and Electroluminescence Characters in Hybrid ZnO and Conjugated Polymer Bulk Heterojunction Devices

    Institute of Scientific and Technical Information of China (English)

    LIU Jun-Peng; QU Sheng-Chun; XU Ying; CHEN Yong-Hai; ZENG Xiang-Bo; WANG Zhi-Jie; ZHOU Hui-Ying; WANG Zhan-Guo

    2007-01-01

    We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) bulk heterojunction photovoltaic cells. Photoluminescence quenching experimental results indicate that the ultrafast photoinduced electron transfer occurs from MDMO-PPV to ZnO under illumination. The ultrafast photoinduced electron transfer effect is induced because ZnO has an electron affinity about 1.2 eV greater than that of MDMO-PPV. Electron 'back transfer' can occur if the interfacial barrier between ZnO and MDMO-PPV can be overcome by applying a substantial electric field. Therefore, electroluminescence action due to the fact that the back transfer effect can be observed in the ZnO: MDMO-PPV devices since a forward bias is applied. The photovoltaic and electroluminescence actions in the same ZnO: MDMO-PPV device can be induced by different injection ways: photoinjection and electrical injection. The devices are expected to provide an opportunity for dual functionality devices with photovoltaic effect and electroluminescence character.

  9. Effect of annealing on bulk heterojunction organic solar cells based on copper phthalocyanine and perylene derivative

    KAUST Repository

    Kim, Inho

    2012-02-01

    We investigated the effects of annealing on device performances of bulk heterojunction organic solar cells based on copper phthalocyanine (CuPc) and N,N′-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C6). Blended films of CuPc and PTCDI-C6 with annealing at elevated temperature were characterized by measuring optical absorption, photoluminescence, and X-ray diffraction. Enhanced molecular ordering and increments in domain sizes of donor and acceptor for the blended films were observed, and their influences on device performances were discussed. Annealing led to substantial improvements in photocurrent owing to enhanced molecular ordering and formation of percolation pathways. © 2011 Elsevier B.V. All rights reserved.

  10. Ferroelectric domain switching dynamics and memristive behaviors in BiFeO3-based magnetoelectric heterojunctions

    Science.gov (United States)

    Huang, Weichuan; Liu, Yukuai; Luo, Zhen; Hou, Chuangming; Zhao, Wenbo; Yin, Yuewei; Li, Xiaoguang

    2018-06-01

    The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, ~150 nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be non-volatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of ~20 V. By reducing the thickness of BFO, the La0.6Sr0.4MnO3/BFO (~5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (~4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.

  11. Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2014-01-01

    Full Text Available Metal/semiconductor and transparent conductive oxide (TCO/semiconductor heterojunctions have emerged as an effective modality in the fabrication of photoelectric devices. This review is following a recent shift toward the engineering of TCO layers and structured Si substrates, incorporating metal nanoparticles for the development of next-generation photoelectric devices. Beneficial progress which helps to increase the efficiency and reduce the cost, has been sequenced based on efficient technologies involved in making novel substrates, TCO layers, and electrodes. The electrical and optical properties of indium tin oxide (ITO and aluminum doped zinc oxide (AZO thin films can be enhanced by structuring the surface of TCO layers. The TCO layers embedded with Ag nanoparticles are used to enhance the plasmonic light trapping effect in order to increase the energy harvesting nature of photoelectric devices. Si nanopillar structures which are fabricated by photolithography-free technique are used to increase light-active surface region. The importance of the structure and area of front electrodes and the effect of temperature at the junction are the value added discussions in this review.

  12. Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Hazra, Purnima; Singh, Satyendra Kumar [Department of Electronics and Communication Engineering, Motilal Neheru National Institute of Technology, Allahabad 211004 (India); Jit, Satyabrata, E-mail: sjit.ece@itbhu.ac.in [Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005 (India)

    2015-01-01

    In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance (<3%) in the visible wavelength region compared to Si/ZnO heterojunctions (>20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the

  13. ALD-Developed Plasmonic Two-Dimensional Au-WO3-TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices.

    Science.gov (United States)

    Karbalaei Akbari, Mohammad; Hai, Zhenyin; Wei, Zihan; Detavernier, Christophe; Solano, Eduardo; Verpoort, Francis; Zhuiykov, Serge

    2018-03-28

    Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal-semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO 2 semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au-TiO 2 -based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO 3 nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal-insulator-semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au-WO 3 -TiO 2 heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au-TiO 2 and Au-WO 3 -TiO 2 heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices.

  14. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

    Science.gov (United States)

    2013-01-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

  15. Performance of spray deposited poly [N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′, 3′-benzothiadiazole)]/[6,6]-phenyl-C61-butyric acid methyl ester blend active layer based bulk heterojunction organic solar cell devices

    International Nuclear Information System (INIS)

    Saitoh, Leona; Babu, R. Ramesh; Kannappan, Santhakumar; Kojima, Kenzo; Mizutani, Teruyoshi; Ochiai, Shizuyasu

    2012-01-01

    Bulk heterojunction organic solar cell devices were fabricated using the spray deposited poly [N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′, 3′-benzothiadiazole)]/[6,6]-phenyl-C61-butyric acid methyl ester blend active layer. The spray coating parameters such as spraying time, substrate-nozzle distance for the deposition of active layers were analyzed. Optical absorption of the active layers was analyzed using UV–visible spectral studies in the wavelength range from 300 to 800 nm. The surface morphology of the active layers deposited with different parameters was examined using atomic force microscopy. Surface morphology of the active layers deposited with the substrate-nozzle distance of 20 cm and for 20 s shows smooth morphology with peak-valley value of 4 nm. The devices fabricated using the selected active layer show overall power conversion efficiency of 1.08%. - Graphical abstract: Current–voltage (J–V) characteristics of spray deposited PCDTBT:PC 61 BM active layer based solar cell device under illumination of AM 1.5 G, 100 mW/cm 2 . Highlights: ► Organic solar cells were fabricated using a spray deposited PCDTBT:PC61BM active layer. ► The active layers deposited with spray conditions show flat morphology. ► Using the selected active layers power conversion efficiency of 1.08% is obtained.

  16. High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yuhua; Xiang, Jinzhong, E-mail: jzhxiang@ynu.edu.cn [School of Physical and Astronomy, Yunnan University, Kunming 650091 (China); Tang, Libin, E-mail: scitang@163.com; Ji, Rongbin, E-mail: jirongbin@gmail.com; Zhao, Jun; Kong, Jincheng [Kunming Institute of Physics, Kunming 650223 (China); Lai, Sin Ki; Lau, Shu Ping [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong); Zhang, Kai [Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science, Suzhou 215123 (China)

    2016-08-15

    A high performance ultraviolet (UV) photodetector is receiving increasing attention due to its significant applications in fire warning, environmental monitoring, scientific research, astronomical observation, etc. The enhancement in performance of the UV photodetector has been impeded by lacking of a high-efficiency heterojunction in which UV photons can efficiently convert into charges. In this work, the high performance UV photodetectors have been realized by utilizing organic/inorganic heterojunctions based on a ZnO nanoflakes/poly (N-vinylcarbazole) hybrid. A transparent conducting polymer poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)-coated quartz substrate is employed as the anode in replacement of the commonly ITO-coated glass in order to harvest shorter UV light. The devices show a lower dark current density, with a high responsivity (R) of 7.27 × 10{sup 3 }A/W and a specific detectivity (D*) of 6.20 × 10{sup 13} cm Hz{sup 1/2}/W{sup −1} at 2 V bias voltage in ambient environment (1.30 mW/cm{sup 2} at λ = 365 nm), resulting in the enhancements in R and D* by 49% and one order of magnitude, respectively. The study sheds light on developing high-performance, large scale-array, flexible UV detectors using the solution processable method.

  17. TEMPO/viologen electrochemical heterojunction for diffusion-controlled redox mediation: a highly rectifying bilayer-sandwiched device based on cross-reaction at the interface between dissimilar redox polymers.

    Science.gov (United States)

    Tokue, Hiroshi; Oyaizu, Kenichi; Sukegawa, Takashi; Nishide, Hiroyuki

    2014-03-26

    A couple of totally reversible redox-active molecules, which are different in redox potentials, 2,2,6,6-tetramethylpiperidin-1-oxyl (TEMPO) and viologen (V(2+)), were employed to give rise to a rectified redox conduction effect. Single-layer and bilayer devices were fabricated using polymers containing these sites as pendant groups per repeating unit. The devices were obtained by sandwiching the redox polymer layer(s) with indium tin oxide (ITO)/glass and Pt foil electrodes. Electrochemical measurements of the single-layer device composed of polynorbornene-bearing TEMPO (PTNB) exhibited a diffusion-limited current-voltage response based on the TEMPO(+)/TEMPO exchange reaction, which was almost equivalent to a redox gradient through the PTNB layer depending upon the thickness. The bilayer device gave rise to the current rectification because of the thermodynamically favored cross-reaction between TEMPO(+) and V(+) at the polymer/polymer interface. A current-voltage response obtained for the bilayer device demonstrated a two-step diffusion-limited current behavior as a result of the concurrent V(2+)/V(+) and V(+)/V(0) exchange reactions according to the voltage and suggested that the charge transport process through the device was most likely to be rate-determined by a redox gradient in the polymer layer. Current collection experiments revealed a charge transport balance throughout the device, as a result of the electrochemical stability and robustness of the polymers in both redox states.

  18. Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

    International Nuclear Information System (INIS)

    Hazra, Purnima; Singh, Satyendra Kumar; Jit, Satyabrata

    2015-01-01

    In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance ( 20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the output current rating is about 130 times larger compared to their planar

  19. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu

    2017-07-02

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  20. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu; Barbe, Jeremy; El Labban, Abdulrahman; Eid, Jessica; Del Gobbo, Silvano

    2017-01-01

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  1. Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

    Energy Technology Data Exchange (ETDEWEB)

    Seif, Johannes Peter, E-mail: johannes.seif@alumni.epfl.ch; Ballif, Christophe; De Wolf, Stefaan [Photovoltaics and Thin-Film Electronics Laboratory, Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2002 Neuchâtel (Switzerland); Menda, Deneb; Özdemir, Orhan [Department of Physics, Yıldız Technical University, Davutpasa Campus, TR-34210 Esenler, Istanbul (Turkey); Descoeudres, Antoine; Barraud, Loris [CSEM, PV-Center, Jaquet-Droz 1, CH-2002 Neuchâtel (Switzerland)

    2016-08-07

    Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation of such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.

  2. Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

    Science.gov (United States)

    Forrest, Stephen R.; Thompson, Mark E.; Wei, Guodan; Wang, Siyi

    2017-09-19

    A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

  3. Demonstration of solar-blind AlxGa1-xN-based heterojunction phototransistors

    Science.gov (United States)

    Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao

    2015-12-01

    Al0.4Ga0.6N/Al0.65Ga0.35N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 103 was obtained at 6 V bias.

  4. Demonstration of solar-blind AlxGa1−xN-based heterojunction phototransistors

    International Nuclear Information System (INIS)

    Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong; Wu, Zhisheng; Jiang, Hao

    2015-01-01

    Al 0.4 Ga 0.6 N/Al 0.65 Ga 0.35 N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10 3 was obtained at 6 V bias

  5. Assessing the potential roles of silicon and germanium phthalocyanines in planar heterojunction organic photovoltaic devices and how pentafluoro phenoxylation can enhance π-π interactions and device performance.

    Science.gov (United States)

    Lessard, Benoît H; White, Robin T; Al-Amar, Mohammad; Plint, Trevor; Castrucci, Jeffrey S; Josey, David S; Lu, Zheng-Hong; Bender, Timothy P

    2015-03-11

    In this study, we have assessed the potential application of dichloro silicon phthalocyanine (Cl2-SiPc) and dichloro germanium phthalocyanine (Cl2-GePc) in modern planar heterojunction organic photovoltaic (PHJ OPV) devices. We have determined that Cl2-SiPc can act as an electron donating material when paired with C60 and that Cl2-SiPc or Cl2-GePc can also act as an electron acceptor material when paired with pentacene. These two materials enabled the harvesting of triplet energy resulting from the singlet fission process in pentacene. However, contributions to the generation of photocurrent were observed for Cl2-SiPc with no evidence of photocurrent contribution from Cl2-GePc. The result of our initial assessment established the potential for the application of SiPc and GePc in PHJ OPV devices. Thereafter, bis(pentafluoro phenoxy) silicon phthalocyanine (F10-SiPc) and bis(pentafluoro phenoxy) germanium phthalocyanine (F10-GePc) were synthesized and characterized. During thermal processing, it was discovered that F10-SiPc and F10-GePc underwent a reaction forming small amounts of difluoro SiPc (F2-SiPc) and difluoro GePc (F2-GePc). This undesirable reaction could be circumvented for F10-SiPc but not for F10-GePc. Using single crystal X-ray diffraction, it was determined that F10-SiPc has significantly enhanced π-π interactions compared with that of Cl2-SiPc, which had little to none. Unoptimized PHJ OPV devices based on F10-SiPc were fabricated and directly compared to those constructed from Cl2-SiPc, and in all cases, PHJ OPV devices based on F10-SiPc had significantly improved device characteristics compared to Cl2-SiPc.

  6. Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors.

    Science.gov (United States)

    Liu, Fei; Wang, Jian; Guo, Hong

    2016-10-27

    Black phosphorus (BP) tunneling field effect transistors (TFETs) using heterojunctions (Hes) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on the transport characteristics of BP He-TFETs, which results in the potential pinning effect and deterioration of gate control. However, the on-state current can be effectively enhanced by using hydrogen to saturate the edge dangling bonds in BP He-TFETs, by which means edge states are quenched. By extending layered BP with a smaller band gap to the channel region and modulating the BP thickness, the device performance of BP He-TFETs can be further optimized and can fulfil the requirements of the international technology road-map for semiconductors (ITRS) 2013 for low power applications. In 15 nm 3L-1L and 4L-1L BP He-TFETs along the armchair direction the on-state currents are over two times larger than the current required by ITRS 2013 and can reach above 10 3 μA μm -1 with the fixed off-state current of 10 pA μm -1 . It is also found that the ambipolar effect can be effectively suppressed in BP He-TFETs.

  7. High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

    KAUST Repository

    Tsai, Meng-Lin

    2016-10-28

    Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

  8. Interface magnetization effect in heterojunctions based on semimagnetic compounds

    International Nuclear Information System (INIS)

    Malkova, N.

    1998-07-01

    The electronic states of stressed heterojunctions formed from narrow-gap semimagnetic semiconductors showing antiferromagnetic ordering are studies. The model Hamiltonian is constructed in the framework of the two-band envelope function approximation including far-band corrections. Heterojunctions both with normal and inverted band arrangements in the initial semiconductors are investigated. The interface Tamm-like states have been shown recently toe appear in these heterojunctions and they are spin-split with the magnetic axis perpendicular to the interface plane. The effect of far-band corrections is shown to be conditioned by the mutual movement of the constituent bands, resulting in changes and in some cases in full disappearance of the energy interval in which the interface state exists. The interface magnetization effect is expected when the Fermi level lies in one of the spin-polarized interface bands. Using the appropriate parameters, the value of the relative interface magnetization is calculated. (author)

  9. Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode.

    Science.gov (United States)

    Sarkar, K; Palit, M; Guhathakurata, S; Chattopadhyay, S; Banerji, P

    2017-09-20

    Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga 1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

  10. Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells.

    Science.gov (United States)

    Liu, Jun; Xue, Yuhua; Gao, Yunxiang; Yu, Dingshan; Durstock, Michael; Dai, Liming

    2012-05-02

    By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs(2)CO(3) to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun; Gao, Yunxiang; Yu, Dingshan; Dai, Liming [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Xue, Yuhua [Center of Advanced Science and Engineering for Carbon, Department of Macromolecular, Science and Engineering, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio (United States); Institute of Advanced Materials for Nano-Bio Applications, School of Ophthalmology and Optometry, Wenzhou Medical College, Zhejiang 325027 (China); Durstock, Michael [Materials and Manufacturing Directorate, Air Force Research Laboratory, RXBP, Wright-Patterson Air Force Base, Ohio 45433 (United States)

    2012-05-02

    By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs{sub 2}CO{sub 3} to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He

    2014-08-11

    Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

  13. Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

    Science.gov (United States)

    Rahim, Ishrat; Shah, Mutabar; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Shah Haider

    2017-11-01

    The use of graphene in electronic devices is becoming attractive due to its inherent scalability and is thus well suited for flexible electronic devices. Here we present the electrical characterization of heterojunction diode, based on the nanocomposite of graphene (G) with silver nanoparticles (Ag NPs), at room temperature. The diode was fabricated by depositing nanocomposite on the n-Si substrate. The current - voltage (I - V) characteristic of the fabricated junction shows rectifying behavior similar to a Schottky junction. The junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (ϕb) has been extracted, using various methods, from the experimentally obtained I - V data. The measured values of n, Rs and ϕb are 3.86, 45 Ω and 0.367 eV, respectively, as calculated from the I - V curve. The numerical values of these parameters calculated by different methods are in good agreement with each other showing the consistency of the applied calculating techniques. The conduction mechanism of the fabricated diode seems to have been dominated by the Trap Charge Limited Conduction (TCLC) behavior. The energy distribution of interface states density determined from forward bias I - V characteristic shows an exponential decrease with bias from 27 × 1013 cm-2 eV-1 at (Ec - 0.345) eV to 3 × 1013 cm-2 eV-1at (Ec - 0.398) eV.

  14. Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

    Science.gov (United States)

    Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

    2014-01-01

    Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5–20 cm2/V·s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V·s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. PMID:25109609

  15. Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, K. M., E-mail: mrkongara@boisestate.edu; Punnoose, Alex; Hanna, Charles [Department of Physics, Boise State University, Boise, Idaho 83725 (United States); Padture, Nitin P. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2015-05-07

    In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

  16. Bis(tri-n-hexylsilyl oxide) silicon phthalocyanine: a unique additive in ternary bulk heterojunction organic photovoltaic devices.

    Science.gov (United States)

    Lessard, Benoît H; Dang, Jeremy D; Grant, Trevor M; Gao, Dong; Seferos, Dwight S; Bender, Timothy P

    2014-09-10

    Previous studies have shown that the use of bis(tri-n-hexylsilyl oxide) silicon phthalocyanine ((3HS)2-SiPc) as an additive in a P3HT:PC61BM cascade ternary bulk heterojunction organic photovoltaic (BHJ OPV) device results in an increase in the short circuit current (J(SC)) and efficiency (η(eff)) of up to 25% and 20%, respectively. The previous studies have attributed the increase in performance to the presence of (3HS)2-SiPc at the BHJ interface. In this study, we explored the molecular characteristics of (3HS)2-SiPc which makes it so effective in increasing the OPV device J(SC) and η(eff. Initially, we synthesized phthalocyanine-based additives using different core elements such as germanium and boron instead of silicon, each having similar frontier orbital energies compared to (3HS)2-SiPc and tested their effect on BHJ OPV device performance. We observed that addition of bis(tri-n-hexylsilyl oxide) germanium phthalocyanine ((3HS)2-GePc) or tri-n-hexylsilyl oxide boron subphthalocyanine (3HS-BsubPc) resulted in a nonstatistically significant increase in JSC and η(eff). Secondly, we kept the silicon phthalocyanine core and substituted the tri-n-hexylsilyl solubilizing groups with pentadecyl phenoxy groups and tested the resulting dye in a BHJ OPV. While an increase in JSC and η(eff) was observed at low (PDP)2-SiPc loadings, the increase was not as significant as (3HS)2-SiPc; therefore, (3HS)2-SiPc is a unique additive. During our study, we observed that (3HS)2-SiPc had an extraordinary tendency to crystallize compared to the other compounds in this study and our general experience. On the basis of this observation, we have offered a hypothesis that when (3HS)2-SiPc migrates to the P3HT:PC61BM interface the reason for its unique performance is not solely due to its frontier orbital energies but also might be due to a high driving force for crystallization.

  17. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong; Xu, Jun; Ren, Tian-Ling

    2014-01-01

    0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced

  18. High-performance inverted planar heterojunction perovskite solar cells based on a solution-processed CuOx hole transport layer.

    Science.gov (United States)

    Sun, Weihai; Li, Yunlong; Ye, Senyun; Rao, Haixia; Yan, Weibo; Peng, Haitao; Li, Yu; Liu, Zhiwei; Wang, Shufeng; Chen, Zhijian; Xiao, Lixin; Bian, Zuqiang; Huang, Chunhui

    2016-05-19

    During the past several years, methylammonium lead halide perovskites have been widely investigated as light absorbers for thin-film photovoltaic cells. Among the various device architectures, the inverted planar heterojunction perovskite solar cells have attracted special attention for their relatively simple fabrication and high efficiencies. Although promising efficiencies have been obtained in the inverted planar geometry based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) sulfonic acid ( PSS) as the hole transport material (HTM), the hydrophilicity of the PSS is a critical factor for long-term stability. In this paper, a CuOx hole transport layer from a facile solution-processed method was introduced into the inverted planar heterojunction perovskite solar cells. After the optimization of the devices, a champion PCE of 17.1% was obtained with an open circuit voltage (Voc) of 0.99 V, a short-circuit current (Jsc) of 23.2 mA cm(-2) and a fill factor (FF) of 74.4%. Furthermore, the unencapsulated device cooperating with the CuOx film exhibited superior performance in the stability test, compared to the device involving the PSS layer, indicating that CuOx could be a promising HTM for replacing PSS in inverted planar heterojunction perovskite solar cells.

  19. Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction.

    Science.gov (United States)

    Li, Guanghui; Liu, Lin; Wu, Guan; Chen, Wei; Qin, Sujie; Wang, Yi; Zhang, Ting

    2016-09-01

    A novel self-powered photodetector based on reduced graphene oxide (rGO)/n-Si p-n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p-n vertical heterojunction between a drop-casted rGO thin film and n-Si. Contacts between the semiconductor layer (rGO, n-Si) and source-drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self-powered UV-near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm -2 ), the device has a photoresponsivity of 1.52 A W -1 , with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 10 4 when the power density reaches ≈2.5 mW cm -2 . The high photoresponse primarily arises from the built-in electric field formed at the interface of n-Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n-Si effective contact area on device performance are also systematically investigated. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Synthesis and Characterization of Methylammonium Lead Iodide Perovskite and its Application in Planar Hetero-junction Devices

    Science.gov (United States)

    Upadhyaya, Aditi; Mohan Singh Negi, Chandra; Yadav, Anjali; Gupta, Saral K.; Singh Verma, Ajay

    2018-06-01

    The present paper reports on the synthesis and characterization of methylammonium lead iodide perovskite thin film and its applications in heterojunction devices. Perovskite thin films were deposited by a simple spin-coating method using a precursor solution including methyl ammonium iodide and lead iodide onto a glass substrate. The surface morphology study via field emission scanning electron microscopy of the perovskite thin film shows complete surface coverage on glass substrate with negligible pin-holes. UV–visible spectroscopy study revealed a broad absorption range and the exhibition of a band-gap of 1.6 eV. The dark current-voltage (I–V) characteristics of all the devices under study show rectifying behaviour similar to the Schottky diode. Various device parameters such as ideality factor and barrier height are extracted from the I–V curve. At low voltages the devices exhibit Ohmic behaviour, trap free space charge limited conduction governs the charge transport at an intermediate voltage range, while at much higher voltages the devices show trap controlled space charge limited conduction. Furthermore, impedance spectroscopy measurements enable us to extract the various internal parameters of the devices. Correlations between these parameters and I–V characteristics are discussed. The different capacitive process arising in the devices was discussed using the capacitance versus frequency curve.

  1. Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction.

    Science.gov (United States)

    Guo, Daoyou; Liu, Han; Li, Peigang; Wu, Zhenping; Wang, Shunli; Cui, Can; Li, Chaorong; Tang, Weihua

    2017-01-18

    A solar-blind photodetector based on β-Ga 2 O 3 /NSTO (NSTO = Nb:SrTiO 3 ) heterojunctions were fabricated for the first time, and its photoelectric properties were investigated. The device presents a typical positive rectification in the dark, while under 254 nm UV light illumination, it shows a negative rectification, which might be caused by the generation of photoinduced electron-hole pairs in the β-Ga 2 O 3 film layer. With zero bias, that is, zero power consumption, the photodetector shows a fast photoresponse time (decay time τ d = 0.07 s) and the ratio I photo /I dark ≈ 20 under 254 nm light illumination with a light intensity of 45 μW/cm 2 . Such behaviors are attributed to the separation of photogenerated electron-hole pairs driven by the built-in electric field in the depletion region of β-Ga 2 O 3 and the NSTO interface, and the subsequent transport toward corresponding electrodes. The photocurrent increases linearly with increasing the light intensity and applied bias, while the response time decreases with the increase of the light intensity. Under -10 V bias and 45 μW/cm 2 of 254 nm light illumination, the photodetector exhibits a responsivity R λ of 43.31 A/W and an external quantum efficiency of 2.1 × 10 4 %. The photo-to-electric conversion mechanism in the β-Ga 2 O 3 /NSTO heterojunction photodetector is explained in detail by energy band diagrams. The results strongly suggest that a photodetector based on β-Ga 2 O 3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.

  2. Device operation of conjugated polymer/zinc oxide bulk heterojunction solar cells

    NARCIS (Netherlands)

    Koster, L. Jan Anton; van Strien, Wouter J.; Beek, Waldo J. E.; Blom, Paul W. M.

    2007-01-01

    Solar cells based on a poly (p-phenylene vinylene) (PPV) derivative and zinc oxide nanoparticles can reach a power conversion efficiency of 1.6%. The transport of electrons and holes in these promising devices is characterized and it is found that the electron mobility is equal to 2.8 x 10(-9) m(2)

  3. Investigation of Interface Charges at the Heterojunction Discontinuity in HBT Devices

    DEFF Research Database (Denmark)

    Fuente, Jesús Grajal de al; Krozer, Viktor

    2002-01-01

    -doped layers are basic tools for interface engineering. An accurate modelling of heterointerfaces which includes thermionic-field emission, surface charges, and surface dipoles allows to analyse the electrical performance of some modern devices based on band gap and interface engineering. It is demonstrated...

  4. Design, fabrication, and characterization of polymer based bulk heterojunction solar cells with enhanced efficiencies

    Science.gov (United States)

    Lu, Haiwei

    Polymer based bulk heterojunction (BHJ) solar cells offer promising technological advantages for actualization of low-cost and large-area fabrication on flexible substrates. To reach the envisaged market entry figure of 10% power conversion efficiency (PCE), it is crucial that more solar energy is utilized in the active layer, requiring both higher energy conversion efficiency and expansion of the absorption spectrum of the active layer to near infrared (NIR) region. The research introduced in this dissertation is an effort to increase PCE of solar cells from the aforementioned two directions. In the first method, carbon nanotubes (CNTs) were incorporated into polymer-fullerene BHJ solar cells to increase the hole-collection efficiency. Devices with CNT monolayer networks placed at different positions were fabricated, and the impact of CNTs on device performance was studied. It was demonstrated that CNTs placed on the hole-collection side of the device resulted in optimized performance, with PCE increased from 4% to 4.9%. To realize the controlled deposition of a uniform layer of CNTs on different positions, a mild plasma treatment of the active-layer was employed, and the influence of plasma treatment on device performance was also studied. In the second strategy, I developed an approach to expand the absorption spectrum to NIR region. In this case, hybrid polymer based BHJ solar cells composed of pyridine-capped PbS (PbS-py) quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) were proposed. With pyridines as capping ligands, devices showed superior performance compared to with conventionally used oleate agents. PbS QDs with bandgaps of ˜1.13-1.38 eV offered the advantage of energetically favorable charge separation between P3HT and PbS QDs for photoexcitons in both visible and NIR regions. It was also found that thermal annealing leads to the removal of excess and interfacial pyridine ligands in polymer/QDs composites, and thus provides intimate electrical

  5. TiO2 Nanorod Arrays Based Self-Powered UV Photodetector: Heterojunction with NiO Nanoflakes and Enhanced UV Photoresponse.

    Science.gov (United States)

    Gao, Yanyan; Xu, Jianping; Shi, Shaobo; Dong, Hong; Cheng, Yahui; Wei, Chengtai; Zhang, Xiaosong; Yin, Shougen; Li, Lan

    2018-04-04

    The self-powered ultraviolet photodetectors (UV PDs) have attracted increasing attention due to their potential applications without consuming any external power. It is important to obtain the high-performance self-powered UV PDs by a simple method for the practical application. Herein, TiO 2 nanorod arrays (NRs) were synthesized by hydrothermal method, which were integrated with p-type NiO nanoflakes to realize a high performance pn heterojunction for the efficient UV photodetection. TiO x thin film can improve the morphological and carrier transport properties of TiO 2 NRs and decrease the surface and defect states, resulting in the enhanced photocurrent of the devices. NiO/TiO 2 nanostructural heterojunctions show excellent rectifying characteristics (rectification ratio of 2.52 × 10 4 and 1.45 × 10 5 for NiO/TiO 2 NRs and NiO/TiO 2 NRs/TiO x , respectively) with a very low reverse saturation current. The PDs based on the heterojunctions exhibit good spectral selectivity, high photoresponsivity, and fast response and recovery speeds without external applied bias under the weak light radiation. The devices demonstrate good stability and repeatability under UV light radiation. The self-powered performance could be attributed to the proper built-in electric field of the heterojunction. TiO 2 NRs and NiO nanoflakes construct the well-aligned energy-band structure. The enhanced responsivity and detectivity for the devices with TiO x thin films is related to the increased interfacial charge separation efficiency, reduced carrier recombination, and relatively good electron transport of TiO 2 NRs.

  6. Ambipolar organic heterojunction transistors with various p-type semiconductors

    International Nuclear Information System (INIS)

    Shi Jianwu; Wang Haibo; Song De; Tian Hongkun; Geng Yanhou; Yan Donghang

    2008-01-01

    Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices. The much difference of their device performance was attributed to the roughness of the first semiconductor films, which was original from their distinct growth habits. The flat and continuous films for the first semiconductors layer can lead to a smooth heterojunction interface, and obtained a high device performance for ambipolar organic heterojunction transistors

  7. Nanocomposite-Based Bulk Heterojunction Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Bich Phuong Nguyen

    2014-01-01

    Full Text Available Photovoltaic devices based on nanocomposites composed of conjugated polymers and inorganic nanocrystals show promise for the fabrication of low-cost third-generation thin film photovoltaics. In theory, hybrid solar cells can combine the advantages of the two classes of materials to potentially provide high power conversion efficiencies of up to 10%; however, certain limitations on the current within a hybrid solar cell must be overcome. Current limitations arise from incompatibilities among the various intradevice interfaces and the uncontrolled aggregation of nanocrystals during the step in which the nanocrystals are mixed into the polymer matrix. Both effects can lead to charge transfer and transport inefficiencies. This paper highlights potential strategies for resolving these obstacles and presents an outlook on the future directions of this field.

  8. Demonstration of solar-blind Al{sub x}Ga{sub 1−x}N-based heterojunction phototransistors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lingxia; Tang, Shaoji; Liu, Changshan; Li, Bin; Wu, Hualong; Wang, Hailong [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Wu, Zhisheng [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China); Jiang, Hao, E-mail: stsjiang@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275 (China); School of Microelectronics, Sun Yat-sen University, Guangzhou 510275 (China)

    2015-12-07

    Al{sub 0.4}Ga{sub 0.6}N/Al{sub 0.65}Ga{sub 0.35}N heterojunction phototransistors have been fabricated from the epi-structure grown by low-pressure metal organic chemical vapor deposition on c-plane sapphire substrates. P-type conductivity of the AlGaN base layer was realized by using indium surfactant-assisted Mg-delta doping method. Regrowth technique was used to suppress the Mg memory effect on the n-type emitter. The fabricated devices with a 150-μm-diameter active area exhibited a bandpass spectral response between 235 and 285 nm. Dark current was measured to be less than 10 pA for bias voltages below 2.0 V. A high optical gain of 1.9 × 10{sup 3} was obtained at 6 V bias.

  9. Bulk heterojunction organic photovoltaic based on polythiophene-polyelectrolyte carbon nanotube composites

    Energy Technology Data Exchange (ETDEWEB)

    Reyes-Reyes, M. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico); Lopez-Sandoval, R. [Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas 4a. Seccion, San Luis Potosi 78216 (Mexico); Liu, J.; Carroll, D.L. [Center for Nanotechnology and Molecular Materials, Wake Forest University, Winston-Salem, NC (United States)

    2007-09-22

    It is shown that carbon nanotubes can be used to enhance carrier mobility for efficient removal of the charges in thin film polymer-conjugated/fullerene photovoltaic devices. The fabricated photovoltaic devices consist of poly(3-octylthiophene) (P3OT) polymer blended with undoped multiwalled carbon nanotubes (MWNTs) and carbon nanotubes doped with nitrogen (CNx-MWNTs). Nanophase formation and dispersion problems associated with the use of carbon nanotubes in polymer devices were addressed through the generation of functional groups and electrostatic attaching of the polyelectrolyte poly(dimethyldiallylamine) chloride (PDDA) in both MWNTs and CNx-MWNT systems. The resultant nanophase was highly dispersed allowing for excellent bulk heterojunction formation. Our results indicate that CNx-MWNTs enhance the efficiency of P3OT solar cells in comparison with MWNTs. (author)

  10. Enhanced photocatalytic performance of TiO{sub 2} nanotube based heterojunction photocatalyst via the coupling of graphene and FTO

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Xiaoyou [College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Yu, Jianyuan [College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Department of Environmental and Chemical Engineering, Tangshan University, Tangshan 063000 (China); Wang, Likun; Fu, Chen; Wang, Jixia; Wang, Li [College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Zhao, Hongli, E-mail: zhaohongli@ysu.edu.cn [College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); State Key Laboratory of Metastable Materials Science and Technology, Qinhuangdao 066004 (China); Yang, Jingkai, E-mail: yangjk@ysu.edu.cn [National Defense Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2017-08-15

    Highlights: • The rGO-TONT composites have been deposited onto FTO. • Photocatalytic reaction rate shows 3 times greater than TONT. • Chemical interaction between rGO and TONT was analyzed. • Electron transfer process in rGO-TONT/FTO heterojunction was discussed. - Abstract: The TiO{sub 2} nanotube (TONT) based heterojunction photocatalyst was developed via the coupling of reduced graphene oxide (rGO) and SnO{sub 2}:F film (FTO). Based on the characterization of Raman analysis, XRD, SEM, TEM, XPS and ESR, the crystal phase, morphology, heterojunction interfacial interaction and the photoinduced electron chemical environment of the samples are studied. In the photodegradation of methylene blue (MB) solution under UV irradiation, the rGO-TONT/FTO heterojunction photocatalyst exhibits the improved photocatalytic reaction rate, 3 times greater than that of pure TONT. The enhanced photocatalytic mechanism was discussed by PL. The effectively separate charge in heterojunction structure of rGO-TONT/FTO is responsible for the enhanced photocatalytic activity. Wherein, the abundant oxygen vacancies at TiO{sub 2} surface and the chemically bonded interface in rGO-TONT heterojunction also contributes to the interfacial electron transfer. Besides, the introduction of rGO enhanced its optical absorption capacity.

  11. Green perovskite light emitting diodes based on the ITO/Al2O3/CsPbBr3 heterojunction structure

    Science.gov (United States)

    Zhuang, Shiwei; Ma, Xue; Hu, Daqiang; Dong, Xin; Zhang, Yuantao; Zhang, Baolin

    2018-03-01

    Perovskite light emitting diodes (PeLEDs) now emerge as a promising new optoelectronic application field for these amazing semiconductors. For the purpose of investigating the device structures and light emission mechanisms of PeLEDs, we have fabricated green PeLEDs based on the ITO/Al2O3/CsPbBr3 heterojunction structure. The emission layer inorganic perovskite CsPbBr3 film with small grain sizes (∼28.9 nm) was prepared using a two-step method. The device exhibits a typical rectification behavior with turn-on voltage of ∼6 V. The EL emission band is narrow with the FWHM of ∼25 nm. The peak EQE of the device was ∼0.09%. The working mechanism of the device is also discussed. The result of the present work provides a feasible innovation idea of PeLEDs fabrication and great potentials for the development of perovskite based LEDs.

  12. Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics

    KAUST Repository

    Nogay, Gizem

    2016-09-26

    Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) values due to a high contact resistivity. In this study, we show that the replacement of doped amorphous silicon with nanocrystalline silicon is beneficial for device performance. Optically, we observe an improved short-circuit current density when these layers are applied to the front side of the device. Electrically, we observe a lower contact resistivity, as well as higher FF. Importantly, our cell parameter analysis, performed in a temperature range from -100 to +80 °C, reveals that the use of hole-collecting p-type nanocrystalline layer suppresses the carrier transport barrier, maintaining FF s in the range of 70% at -100 °C, whereas it drops to 40% for standard amorphous doped layers. The same analysis also reveals a saturation onset of the open-circuit voltage at -100 °C using doped nanocrystalline layers, compared with saturation onset at -60 °C for doped amorphous layers. These findings hint at a reduced importance of the parasitic Schottky barrier at the interface between the transparent electrodes and the selective contact in the case of nanocrystalline layer implementation. © 2011-2012 IEEE.

  13. Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics

    KAUST Repository

    Nogay, Gizem; Seif, Johannes Peter; Riesen, Yannick; Tomasi, Andrea; Jeangros, Quentin; Wyrsch, Nicolas; Haug, Franz-Josef; De Wolf, Stefaan; Ballif, Christophe

    2016-01-01

    Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) values due to a high contact resistivity. In this study, we show that the replacement of doped amorphous silicon with nanocrystalline silicon is beneficial for device performance. Optically, we observe an improved short-circuit current density when these layers are applied to the front side of the device. Electrically, we observe a lower contact resistivity, as well as higher FF. Importantly, our cell parameter analysis, performed in a temperature range from -100 to +80 °C, reveals that the use of hole-collecting p-type nanocrystalline layer suppresses the carrier transport barrier, maintaining FF s in the range of 70% at -100 °C, whereas it drops to 40% for standard amorphous doped layers. The same analysis also reveals a saturation onset of the open-circuit voltage at -100 °C using doped nanocrystalline layers, compared with saturation onset at -60 °C for doped amorphous layers. These findings hint at a reduced importance of the parasitic Schottky barrier at the interface between the transparent electrodes and the selective contact in the case of nanocrystalline layer implementation. © 2011-2012 IEEE.

  14. Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

    KAUST Repository

    Chavali, Raghu V. K.; De Wolf, Stefaan; Alam, Muhammad A.

    2018-01-01

    The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent

  15. Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

    Science.gov (United States)

    Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

    2015-09-07

    Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Structural, electronic structure, and band alignment properties at epitaxial NiO/Al{sub 2}O{sub 3} heterojunction evaluated from synchrotron based X-ray techniques

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S. D., E-mail: devsh@rrcat.gov.in; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Ganguli, Tapas [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Nand, Mangla; Jha, S. N. [Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085 (India); Shukla, D. K.; Phase, D. M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452017 (India)

    2016-04-28

    The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al{sub 2}O{sub 3} heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al{sub 2}O{sub 3} substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al{sub 2}O{sub 3} substrate. Surface related feature in Ni 2p{sub 3/2} core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al{sub 2}O{sub 3} substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al{sub 2}O{sub 3} layers. A type-I band alignment at NiO and Al{sub 2}O{sub 3} heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

  17. Organic semiconductor heterojunctions and its application in organic light-emitting diodes

    CERN Document Server

    Ma, Dongge

    2017-01-01

    This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

  18. Efficiency-limiting processes in OPV bulk heterojunctions of GeNIDTBT and IDT-based acceptors

    KAUST Repository

    Al-Saggaf, Sarah M.

    2018-05-16

    The successful realization of highly efficient bulk heterojunction OPV devices requires the development of organic donor and acceptor materials with tailored properties. Recently, non-fullerene acceptors (NFAs) have emerged as an alternative to the ubiquitously used fullerene derivatives. NFAs showed a rapid increase in efficiencies, now exceeding a PCE of 13%. In my thesis research, I used two small molecule IDT-based acceptors, namely O-IDTBR and O-IDTBCN, in combination with a wide bandgap donor polymer, GeNIDT-BT, as active material in BHJ solar cells and investigated their photophysical characteristics. The polymer combined with O-IDTBR as acceptor achieved a power conversion efficiency of only 2%, which is significantly lower than that obtained for the system of GeNIDT-BT: O-IDTBCN (5.3%). Using nano- to microsecond transient absorption spectroscopy, I investigated both systems and demonstrated that GeNIDT-BT:O-IDTBR exhibits more geminate recombination of interfacial charge-transfer states, leading to lower short circuit currents. Using time-delayed collection field experiments, I studied the field dependence of charge generation and its impact on the device fill factor. Overall, my results provide a qualitative understanding of the efficiency-limiting processes in both systems and their impact on device performance.

  19. Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

    Science.gov (United States)

    Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

    2010-07-27

    A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

  20. Naphtho[2,1-b:3,4-b']dithiophene-based bulk heterojunction solar cells: how molecular structure influences nanoscale morphology and photovoltaic properties.

    Science.gov (United States)

    Kim, Yu Jin; Cheon, Ye Rim; Back, Jang Yeol; Kim, Yun-Hi; Chung, Dae Sung; Park, Chan Eon

    2014-11-10

    Organic bulk heterojunction photovoltaic devices based on a series of three naphtho[2,1-b:3,4-b']dithiophene (NDT) derivatives blended with phenyl-C71-butyric acid methyl ester were studied. These three derivatives, which have NDT units with various thiophene-chain lengths, were employed as the donor polymers. The influence of their molecular structures on the correlation between their solar-cell performances and their degree of crystallization was assessed. The grazing-incidence angle X-ray diffraction and atomic force microscopy results showed that the three derivatives exhibit three distinct nanoscale morphologies. We correlated these morphologies with the device physics by determining the J-V characteristics and the hole and electron mobilities of the devices. On the basis of our results, we propose new rules for the design of future generations of NDT-based polymers for use in bulk heterojunction solar cells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Red light sensitive heterojunction organic field-effect transistors based on neodymium phthalocyanine as photosensitive layer

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Wenli; Tang, Yu [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Yao, Bo [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Department of Physics, Shaoxing University, Shaoxing 312000 (China); Zhou, Maoqing; Luo, Xiao; Li, Yao; Zhong, Junkang; Sun, Lei [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Peng, Yingquan, E-mail: yqpeng@lzu.edu.cn [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China)

    2015-08-31

    Compared with organic photodiodes, photoresponsive organic field-effect transistors (photOFETs) exhibit higher sensitivity and lower noise. The performance of photOFETs based on conventional single layer structure is generally poor due to the low carrier mobility of the active channel materials. We demonstrate a high performance photOFET operating in red light with a structure of C60/neodymium phthalocyanine (NdPc{sub 2}) planar heterojunction. PhotOFETs based on single-layer NdPc{sub 2} and C60/NdPc{sub 2} heterojunction (denoted as NdPc{sub 2}-photOFETs and C60/NdPc{sub 2}-photOFETs, respectively) were fabricated and characterized. It is concluded that the photOFETs with heterojunction structure showed superior performance compared to that of single layer photOFETs. And for red light with a wavelength of 655 nm, C60/NdPc{sub 2}-photOFETs exhibited a large photoresponsivity of ~ 0.8 A/W, which is approximately 62 times larger than that of NdPc{sub 2}-photOFETs under the same conditions. The high performance of C60/NdPc{sub 2}-photOFETs is attributed to its high light absorption coefficient, high exciton dissociation efficiency and high carrier mobility. - Highlights: • The mobility of light-sensitive organic materials is generally low. • We fabricated C60/NdPc{sub 2} photoresponsive organic field-effect transistors (photOFETs). • The performance of C60/NdPc{sub 2} photOFETs is superior than single-layer NdPc{sub 2} photOFETs. • C60/NdPc{sub 2} photOFETs exhibited a large photoresponsivity of ~ 0.8 A/W for red light.

  2. Optoelectrical Properties of a Heterojunction with Amorphous InGaZnO Film on n-Silicon Substrate

    Science.gov (United States)

    Jiang, D. L.; Ma, X. Z.; Li, L.; Xu, Z. K.

    2017-10-01

    An a-IGZO/ n-Si heterojunction device has been fabricated at room temperature by depositing amorphous InGaZnO (a-IGZO) film on n-type silicon substrate by plasma-assisted pulsed laser deposition and its optoelectrical properties studied in detail. The heterojunction showed distinct rectifying characteristic with rectification ratio of 1.93 × 103 at ±2 V bias and reverse leakage current density of 1.6 × 10-6 A cm-2 at -2 V bias. More interestingly, the heterojunction not only showed the characteristic of unbiased photoresponse, but could also detect either ultraviolet or ultraviolet-visible light by simply changing the polarity of the bias applied to the heterojunction. The variable photoresponse phenomenon and the charge transport mechanisms in the heterojunction are explained based on the energy band diagram of the heterojunction.

  3. Bulk Heterojunction Solar Cells Based on Blends of Conjugated Polymers with II–VI and IV–VI Inorganic Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ryan Kisslinger

    2017-01-01

    Full Text Available Bulk heterojunction solar cells based on blends of quantum dots and conjugated polymers are a promising configuration for obtaining high-efficiency, cheaply fabricated solution-processed photovoltaic devices. Such devices are of significant interest as they have the potential to leverage the advantages of both types of materials, such as the high mobility, band gap tunability and possibility of multiple exciton generation in quantum dots together with the high mechanical flexibility and large molar extinction coefficient of conjugated polymers. Despite these advantages, the power conversion efficiency (PCE of these hybrid devices has remained relatively low at around 6%, well behind that of all-organic or all-inorganic solar cells. This is attributed to major challenges that still need to be overcome before conjugated polymer–quantum dot blends can be considered viable for commercial application, such as controlling the film morphology and interfacial structure to ensure efficient charge transfer and charge transport. In this work, we present our findings with respect to the recent development of bulk heterojunctions made from conjugated polymer–quantum dot blends, list the ongoing strategies being attempted to improve performance, and highlight the key areas of research that need to be pursued to further develop this technology.

  4. Photovoltaic properties of pentacene/[6,6]-phenyl C61 butyric acid methyl ester based bilayer hetero-junction solar cells

    International Nuclear Information System (INIS)

    Reddy, V S; Karak, S; Ray, S K; Dhar, A

    2009-01-01

    The photovoltaic properties of devices based on a new combination, pentacene/[6,6]-phenyl C 61 butyric acid methyl ester (PCBM) bilayer hetero-junctions, were investigated. The crystallinity of pentacene was found to be improved by depositing a PEDOT : PSS layer on an indium tin oxide substrate, which in turn doubled the power conversion efficiency of the device. The PCBM layer showed a significant contribution to the device photocurrent, which originated mainly due to the dissociation of excitons at the pentacene/PCBM interface. By optimizing the thickness of the pentacene and PCBM layers, a broader photo-response was obtained in the external quantum efficiency spectra indicating efficient light harvesting throughout the visible region of the solar spectrum.

  5. Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

    NARCIS (Netherlands)

    Zhang, Jiaye; Han, Shaobo; Luo, Weihuang; Xiang, Shuhuai; Zou, Jianli; Oropeza, Freddy E.; Gu, Meng; Zhang, Kelvin H.L.

    2018-01-01

    Transparent oxide semiconductors hold great promise for many optoelectronic devices such as transparent electronics, UV-emitting devices, and photodetectors. A p-n heterojunction is the most ubiquitous building block to realize these devices. In this work, we report the fabrication and

  6. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  7. High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction.

    Science.gov (United States)

    Yu, Jingjing; Javaid, Kashif; Liang, Lingyan; Wu, Weihua; Liang, Yu; Song, Anran; Zhang, Hongliang; Shi, Wen; Chang, Ting-Chang; Cao, Hongtao

    2018-03-07

    A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10 7 , and a specific detectivity up to 3.3 × 10 14 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.

  8. Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE

    Science.gov (United States)

    Riaz, Muhammad; Earles, S. K.; Kadhim, Ahmed; Azzahrani, Ahmad

    The computer analysis of tandem solar cell, c-Si/a-Si:H/μc-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12eV, 1.50eV and 1.70eV, respectively. First, single junction solar cell with both a-Si and μc-SiGe absorbing layers are designed and compared. The thickness for both layers are kept the same. In a single junction, solar cell with a-Si absorbing layer, the fill factor and the efficiency are noticed as FF = 78.98%, and η = 6.03%. For μc-SiGe absorbing layer, the efficiency and fill factor are increased as η = 7.06% and FF = 84.27%, respectively. Second, for tandem thin film solar cell c-Si/a-Si:H/μc-SiGe, the fill factor FF = 81.91% and efficiency η = 9.84% have been noticed. The maximum efficiency for both single junction thin film solar cell c-Si/μc-SiGe and tandem solar cell c-Si/a-Si:H/μc-SiGe are improved with check board surface design for light trapping.

  9. Synthesis and Characteristics of ZnS Nanospheres for Heterojunction Photovoltaic Device

    Science.gov (United States)

    Chou, Sheng-Hung; Hsiao, Yu-Jen; Fang, Te-Hua; Chou, Po-Hsun

    2015-06-01

    The synthesis of ZnS nanospheres produced using the microwave hydrothermal method was studied. The microstructure and surface and optical properties of ZnS nanospheres on glass were characterized using scanning electron microscopy, high-resolution transmission electron microscopy, x-ray diffraction, and ultraviolet-visible spectroscopy. The influence of deposition time on the transmission and photovoltaic performance was determined. The power conversion efficiency of an Al-doped ZnO/ZnS nanosphere/textured p-Si device improved from 0.93 to 1.77% when the thickness of the ZnS nanostructured film was changed from 75 to 150 nm.

  10. Surface Passivation for Reliable Measurement of Bulk Electronic Properties of Heterojunction Devices.

    Science.gov (United States)

    Bissig, Benjamin; Guerra-Nunez, Carlos; Carron, Romain; Nishiwaki, Shiro; La Mattina, Fabio; Pianezzi, Fabian; Losio, Paolo A; Avancini, Enrico; Reinhard, Patrick; Haass, Stefan G; Lingg, Martina; Feurer, Thomas; Utke, Ivo; Buecheler, Stephan; Tiwari, Ayodhya N

    2016-10-01

    Quantum efficiency measurements of state of the art Cu(In,Ga)Se 2 (CIGS) thin film solar cells reveal current losses in the near infrared spectral region. These losses can be ascribed to inadequate optical absorption or poor collection of photogenerated charge carriers. Insight on the limiting mechanism is crucial for the development of more efficient devices. The electron beam induced current measurement technique applied on device cross-sections promises an experimental access to depth resolved information about the charge carrier collection probability. Here, this technique is used to show that charge carrier collection in CIGS deposited by multistage co-evaporation at low temperature is efficient over the optically active region and collection losses are minor as compared to the optical ones. Implications on the favorable absorber design are discussed. Furthermore, it is observed that the measurement is strongly affected by cross-section surface recombination and an accurate determination of the collection efficiency is not possible. Therefore it is proposed and shown that the use of an Al 2 O 3 layer deposited onto the cleaved cross-section significantly improves the accuracy of the measurement by reducing the surface recombination. A model for the passivation mechanism is presented and the passivation concept is extended to other solar cell technologies such as CdTe and Cu 2 (Zn,Sn)(S,Se) 4 . © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device.

    Science.gov (United States)

    Gao, Ming; Wan, Yazhou; Li, Yong; Han, Baichao; Song, Wenlei; Xu, Fei; Zhao, Lei; Ma, Zhongquan

    2017-05-24

    In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiO x (In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiO x /In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiO x (In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiO x (In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at E v + 4.60 eV in the ternary hybrid a-SiO x (In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (V bi = 0.66 V) and optimally controlled ternary hybrid a-SiO x (In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm 2 , a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device

  12. Heterojunction Structures for Photon Detector Applications

    Science.gov (United States)

    2014-07-21

    IR: Fourier-transform infrared FTO: Fluorine doped tin oxide G-R: generation-recombination HEIWIP: heterojunction interfacial workfunction internal...SECURITY CLASSIFICATION OF: The work presented here report findings in (1) infrared detectors based on p-GaAs/AlGaAs heterojunctions , (2) J and H...aggregate sensitized heterojunctions for solar cell and photon detection applications, (3) heterojunctions sensitized with quantum dots as low cost

  13. Highly Sensitive Switchable Heterojunction Photodiode Based on Epitaxial Bi2FeCrO6 Multiferroic Thin Films.

    Science.gov (United States)

    Huang, Wei; Chakrabartty, Joyprokash; Harnagea, Catalin; Gedamu, Dawit; Ka, Ibrahima; Chaker, Mohamed; Rosei, Federico; Nechache, Riad

    2018-04-18

    Perovskite multiferroic oxides are promising materials for the realization of sensitive and switchable photodiodes because of their favorable band gap (heterojunction was fabricated by pulsed laser deposition. The heterojunction photodiode exhibits a large ideality factor ( n = ∼5.0) and a response time as fast as 68 ms, thanks to the effective charge carrier transport and collection at the BFCO/SRO interface. The diode can switch direction when the electric polarization is reversed by an external voltage pulse. The time-resolved photoluminescence decay of the device measured at ∼500 nm demonstrates an ultrafast charge transfer (lifetime = ∼6.4 ns) in BFCO/SRO heteroepitaxial structures. The estimated responsivity value at 500 nm and zero bias is 0.38 mA W -1 , which is so far the highest reported for any FE thin film photodiode. Our work highlights the huge potential for using multiferroic oxides to fabricate highly sensitive and switchable photodiodes.

  14. High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

    KAUST Repository

    Tsai, Meng-Lin; Li, Ming-yang; Shi, Yumeng; Chen, Lih-Juann; Li, Lain-Jong; He, Jr-Hau

    2016-01-01

    Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a

  15. Effects of acetone-soaking treatment on the performance of polymer solar cells based on P3HT/PCBM bulk heterojunction

    International Nuclear Information System (INIS)

    Liu Yu-Xuan; Lü Long-Feng; Ning Yu; Lu Yun-Zhang; Lu Qi-Peng; Zhang Chun-Mei; Fang Yi; Hu Yu-Feng; Lou Zhi-Dong; Teng Feng; Hou Yan-Bing; Tang Ai-Wei

    2014-01-01

    The improvement of the acetone-soaking treatment to the performance of polymer solar cells based on the P3HT/PCBM bulk heterojunction is reported. Undergoing acetone-soaking, the PCBM does not distribute uniformly in the vertical direction, a PCBM enrichment layer forms on the top of the active layer, which is beneficial to the collection of the carriers and blocking the inverting diffusion carriers. X-ray photoelectron spectroscopy (XPS) analysis reveals that the PCBM weight ratio on the top of the active layer increases by 20% after the acetone-soaking treatment. Due to the nonuniform distribution of PCBM, the short-circuit current density, the open-circuit voltage, and the fill factor are enhanced significantly. Finally, the power conversion efficiency of the acetone-soaking device increases by 31% compared with the control device. (interdisciplinary physics and related areas of science and technology)

  16. Self-Aligned van der Waals Heterojunction Diodes and Transistors.

    Science.gov (United States)

    Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C

    2018-02-14

    A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

  17. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn; Anthopoulos, Thomas D.

    2015-01-01

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  18. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung

    2015-05-26

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  19. High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

    Science.gov (United States)

    Lin, Yen‐Hung; Faber, Hendrik; Labram, John G.; Stratakis, Emmanuel; Sygellou, Labrini; Kymakis, Emmanuel; Hastas, Nikolaos A.; Li, Ruipeng; Zhao, Kui; Amassian, Aram; Treat, Neil D.; McLachlan, Martyn

    2015-01-01

    High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement. PMID:27660741

  20. Hybrid zinc oxide conjugated polymer bulk heterojunction solar cells

    NARCIS (Netherlands)

    Beek, W.J.E.; Wienk, M.M.; Kemerink, M.; Yang, X.N.; Janssen, R.A.J.

    2005-01-01

    Bulk heterojunction photovoltaic devices based on blends of a conjugated polymer poly[2-methoxy-5-(3‘,7‘-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) as electron donor and crystalline ZnO nanoparticles (nc-ZnO) as electron acceptor have been studied. Composite nc-ZnO:MDMO-PPV films were cast

  1. Effect of Aggregation on Squaraine Fullerene Bulk-Heterojunction Organic Photovoltaic Devices

    Science.gov (United States)

    Jalan, Ishita

    Organic photovoltaics (OPV) offer great promise as a low-cost renewable energy source, the relative low efficiency still challenges its commercialization potential. Small conjugated molecules like Squaraine (SQ) molecules show promising advancement in organic photovoltaics (OPV). Advantages of SQ over other materials is that it has a high extinction coefficient (>105), decent photo-stability, good synthetic reproducibility, and tunable molecular structure. With small chemical modifications, the squaraines can have substantial impact on photophysical properties and aggregation pattern, and thus on operational OPV efficiency. The squaraine molecule that will be studied in this work is a symmetric aniline-based squaraine with n-hexyl chain on the molecular arm with di hydroxyl substituents on the aniline, this will be referred to DHSQ(OH) 2. In this work, the assignment of the monomer and aggregate peak is discussed. It is known that crystallinity is important for efficient charge transport and exciton diffusion in the BHJ, this thesis focuses on thermal and solvent vapor annealing the as-cast films to reduce the amorphous regions. It is observed that crystallinity is improved but often at the expense of larger crystal size. Therefore, to achieve optimal OPV efficiency, this tradeoff is controlled to improve the crystallinity while maintaining a small, highly mixed BHJ morphology.

  2. Asphaltene based photovoltaic devices

    Science.gov (United States)

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  3. High-performance photoresponse from single-walled carbon nanotube-zinc oxide heterojunctions

    International Nuclear Information System (INIS)

    Chang, Jingbo; Najeeb, Choolakadavil Khalid; Lee, Jae-Hyeok; Lee, Minsu; Kim, Jae-Ho

    2011-01-01

    Photoactive materials consisting of single-walled carbon nanotube (SWNT)-zinc oxide (ZnO) heterojunctions targeted for optoelectronic applications are investigated in terms of photoresponse and photovoltaic effects. The devices based on SWNT-ZnO heterojunction films are fabricated by two step processes: first, a well aligned SWNT monolayer is deposited on an oxide substrate by the Langmuir-Blodgett (LB) technique; then a ZnO film prepared by filtration of ZnO nanowire solution is transferred onto the SWNT film to form SWNT-ZnO junctions. The SWNT-ZnO heterojunction demonstrates faster photoresponse time (2.75 s) up to 18 times and photovoltaic efficiency (1.33 nA) up to 4 times higher than that of only a ZnO device. Furthermore, the mechanisms of UV sensitivity enhancement and photovoltaic effects are explained according to the high electron mobility in the SWNT-ZnO heterojunctions.

  4. Overcoming the efficiency limitations of SnS2 nanoparticle-based bulk heterojunction solar cells

    Science.gov (United States)

    Tam Nguyen Truong, Nguyen; Kieu Trinh, Thanh; Thanh Hau Pham, Viet; Smith, Ryan P.; Park, Chinho

    2018-04-01

    This study examined the effects of heat treatment, the electron transport layer, and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) incorporation on the performance of hybrid bulk heterojunction (BHJ) solar cells composed of tin disulfide (SnS2) nanoparticles (NPs) and low band gap energy polymers poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopenta[2,1-b3,4-b‧]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT) or poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b‧]dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PBT7). Inserting an electron transport layer (ETL) (i.e., ZnO) on the top of the photoactive layer improved the surface morphology of the photoactive layer, which led to an improvement in charge transport. Moreover, adding a suitable amount of PCBM to the SnS2/polymer active layer enhanced the device performance, such as short circuit current density (J sc) and power conversion efficiency (PCE). In particular, adding 0.5 mg of PCBM to the composite solution led to a 25% and 1.5% improvement in the J sc value and PCE, respectively. The enhanced performance was due mainly to the improvements in the surface morphology of the photoactive layer, charge carrier mobility within the donor-acceptor interface, and carrier collection efficiency at the cathode.

  5. Influence of Pt Gate Electrode Thickness on the Hydrogen Gas Sensing Characteristics of Pt/In2O3/SiC Hetero-Junction Devices

    Directory of Open Access Journals (Sweden)

    S. Kandasamy

    2007-09-01

    Full Text Available Hetero-junction Pt/In2O3/SiC devices with different Pt thickness (30, 50 and 90nm were fabricated and their hydrogen gas sensing characteristics have been studied. Pt and In2O3 thin films were deposited by laser ablation. The hydrogen sensitivity was found to increase with decreasing Pt electrode thickness. For devices with Pt thickness of 30 nm, the sensitivity gradually increased with increasing temperature and reached a maximum of 390 mV for 1% hydrogen in air at 530°C. Atomic force microscopy (AFM analysis revealed a decrease in Pt grain size and surface roughness for increasing Pt thickness. The relationship between the gas sensing performance and the Pt film thickness and surface morphology is discussed.

  6. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  7. UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process

    International Nuclear Information System (INIS)

    Echresh, Ahmad; Chey, Chan Oeurn; Zargar Shoushtari, Morteza; Khranovskyy, Volodymyr; Nur, Omer; Willander, Magnus

    2015-01-01

    Highlights: • The p-NiO/n-ZnO heterojunction showed an obvious rectifying behavior and the response of the diode was excellent in generating photocurrent upon UV illumination. • Diode electrical performance presented here were superior to those achieved from similar heterojunction prepared by different methods. • The XPS results show that the heterojunction has a type-II band alignment with a valence band offset of 1.50 eV and conduction band offset of 1.83 eV. - Abstract: A UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction was fabricated using a simple two-step fabrication process. The aqueous chemical hydrothermal and thermal evaporation methods were combined to grow the ZnO nanorods and the NiO thin film, respectively. Structural investigation indicated that well aligned ZnO nanorods with hexagonal face having a preferential orientation along the c-axis (0 0 2) have been achieved and that the NiO thin film is covering all the ZnO nanorods. X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignment of the heterojunction and the valence and the conduction band offsets were determined to be 1.50 eV and 1.83 eV, respectively. The current–voltage characteristics of the p-NiO thin film/ZnO nanorods heterojunction showed a clear rectifying behavior under both dark and UV illumination conditions. The response of the heterojunction diode was excellent regarding the photocurrent generation. Although other similar heterojunction diodes demonstrated lower threshold voltage, the rectification ratio and the sensitivity of the fabricated diode were superior in comparison to other similar heterojunctions reported recently, implying the vitality of the presented two-step process

  8. Sub-bandgap photonic base current method for characterization of interface states at heterointerfaces in heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Shin, H. T.; Kim, K. H.; Kim, K. S.

    2004-01-01

    In this paper, we propose a novel photonic base current analysis method to characterize the interface states in heterojunction bipolar transistors (HBTs) by using the photonic I-V characteristics under sub-bandgap photonic excitation. For the photonic current-voltage characterization of HBTs, an optical source with a photon energy less than the bandgap energy of Al 0.3 Ga 0.7 As and GaAs (E ph = 0.95 eV g,AlGaAs = 1.79 eV, E g,GaAs = 1.45 eV) is employed for the characterization of the interface states distributed in the photo-responsive energy band (E C - 0.95 ≤ E it ≤ E C ) in emitter-base heterojunction at HBTs. The proposed novel method, which is applied to bipolar junction transistors for the first time, is simple, and an accurate analysis of interface traps in HBTs is possible. By using the photonic base-current and the dark-base-current, we qualitatively analyze the interface trap at the Al 0.3 Ga 0.7 As/GaAs heterojunction interface in HBTs.

  9. Analysis on RF parameters of nanoscale tunneling field-effect transistor based on InAs/InGaAs/InP heterojunctions.

    Science.gov (United States)

    Woo, Sung Yun; Yoon, Young Jun; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man

    2013-12-01

    Tunneling field-effect transistors (TFETs) based on the quantum mechanical band-to-band tunneling (BTBT) have advantages such as low off-current and subthreshold swing (S) below 60 mV/dec at room temperature. For these reasons, TFETs are considered as promising devices for low standby power (LSTP) applications. On the other hand, silicon (Si)-based TFETs have a drawback in low on-state current (lon) drivability. In this work, we suggest a gate-all-around (GAA) TFET based on compound semiconductors to improve device performances. The proposed device materials consist of InAs (source), InGaAs (channel), and InP (drain). According to the composition (x) of Ga in In1-xGa(x)As layer of the channel region, simulated devices have been investigated in terms of both direct-current (DC) and RF parameters including tunneling rate, transconductance (g(m)), gate capacitance (Cg), intrinsic delay time (tau), cut-off frequency (fT) and maximum oscillation frequency (f(max)). In this study, the obtained maximum values of tau, fT, and f(max) for GAA InAs/In0.9Ga0.1As/InP heterojunction TFET were 21.2 fs, 7 THz, and 18 THz, respectively.

  10. Carbon based prosthetic devices

    Energy Technology Data Exchange (ETDEWEB)

    Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T. [Los Alamos National Lab., NM (US); Klawitter, J.J.; Ogilvie, W.; Strzepa, P. [Ascension Orthopedics (US); Cook, S.D. [Tulane Univ., New Orleans, LA (US). School of Medicine

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

  11. Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gollu, Sankara Rao, E-mail: sankar.gollu@gmail.com [Plastic Electronics and Energy Lab (PEEL), Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Sharma, Ramakant, E-mail: diptig@iitb.ac.in; G, Srinivas, E-mail: diptig@iitb.ac.in; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Lab (PEEL) Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2014-10-15

    Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO{sub 3}/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO{sub 3} layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

  12. Rational Design of Zinc Phosphide Heterojunction Photovoltaics

    Science.gov (United States)

    Bosco, Jeffrey Paul

    The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an ``earth-abundant'' solar absorber, we find zinc phosphide (α-Zn 3P2) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10. 4cm-1), and long minority-carrier diffusion length (>5 μm), Zn3P 2 is composed of abundant Zn and P elements and has excellent physical properties for scalable thin-film deposition. However, to date, a Zn 3P2 device of sufficient efficiency for commercial applications has not been demonstrated. Record efficiencies of 6.0% for multicrystalline and 4.3% for thin-film cells have been reported, respectively. Performance has been limited by the intrinsic p-type conductivity of Zn3P 2 which restricts us to Schottky and heterojunction device designs. Due to our poor understanding of Zn3P2 interfaces, an ideal heterojunction partner has not yet been found. The goal of this thesis is to explore the upper limit of solar conversion efficiency achievable with a Zn3P2 absorber through the design of an optimal heterojunction PV device. To do so, we investigate three key aspects of material growth, interface energetics, and device design. First, the growth of Zn3P2 on GaAs(001) is studied using compound-source molecular-beam epitaxy (MBE). We successfully demonstrate the pseudomorphic growth of Zn3P2 epilayers of controlled orientation and optoelectronic properties. Next, the energy-band alignments of epitaxial Zn3P2 and II-VI and III-V semiconductor interfaces are measured via high-resolution x-ray photoelectron spectroscopy in order to determine the most appropriate heterojunction partner. From this work, we identify ZnSe as a nearly ideal n-type emitter for a Zn3P 2 PV device. Finally, various II-VI/Zn3P2 heterojunction solar cells designs are

  13. From Recombination Dynamics to Device Performance: Quantifying the Efficiency of Exciton Dissociation, Charge Separation, and Extraction in Bulk Heterojunction Solar Cells with Fluorine-Substituted Polymer Donors

    KAUST Repository

    Gorenflot, Julien

    2017-09-28

    An original set of experimental and modeling tools is used to quantify the yield of each of the physical processes leading to photocurrent generation in organic bulk heterojunction solar cells, enabling evaluation of materials and processing condition beyond the trivial comparison of device performances. Transient absorption spectroscopy, “the” technique to monitor all intermediate states over the entire relevant timescale, is combined with time-delayed collection field experiments, transfer matrix simulations, spectral deconvolution, and parametrization of the charge carrier recombination by a two-pool model, allowing quantification of densities of excitons and charges and extrapolation of their kinetics to device-relevant conditions. Photon absorption, charge transfer, charge separation, and charge extraction are all quantified for two recently developed wide-bandgap donor polymers: poly(4,8-bis((2-ethylhexyl)oxy)benzo[1,2-b:4,5-b′]dithiophene-3,4-difluorothiophene) (PBDT[2F]T) and its nonfluorinated counterpart poly(4,8-bis((2-ethylhexyl)oxy)benzo[1,2-b:4,5-b′]dithiophene-3,4-thiophene) (PBDT[2H]T) combined with PC71BM in bulk heterojunctions. The product of these yields is shown to agree well with the devices\\' external quantum efficiency. This methodology elucidates in the specific case studied here the origin of improved photocurrents obtained when using PBDT[2F]T instead of PBDT[2H]T as well as upon using solvent additives. Furthermore, a higher charge transfer (CT)-state energy is shown to lead to significantly lower energy losses (resulting in higher VOC) during charge generation compared to P3HT:PCBM.

  14. From Recombination Dynamics to Device Performance: Quantifying the Efficiency of Exciton Dissociation, Charge Separation, and Extraction in Bulk Heterojunction Solar Cells with Fluorine-Substituted Polymer Donors

    KAUST Repository

    Gorenflot, Julien; Paulke, Andreas; Piersimoni, Fortunato; Wolf, Jannic Sebastian; Kan, Zhipeng; Cruciani, Federico; El Labban, Abdulrahman; Neher, Dieter; Beaujuge, Pierre; Laquai, Fré dé ric

    2017-01-01

    An original set of experimental and modeling tools is used to quantify the yield of each of the physical processes leading to photocurrent generation in organic bulk heterojunction solar cells, enabling evaluation of materials and processing condition beyond the trivial comparison of device performances. Transient absorption spectroscopy, “the” technique to monitor all intermediate states over the entire relevant timescale, is combined with time-delayed collection field experiments, transfer matrix simulations, spectral deconvolution, and parametrization of the charge carrier recombination by a two-pool model, allowing quantification of densities of excitons and charges and extrapolation of their kinetics to device-relevant conditions. Photon absorption, charge transfer, charge separation, and charge extraction are all quantified for two recently developed wide-bandgap donor polymers: poly(4,8-bis((2-ethylhexyl)oxy)benzo[1,2-b:4,5-b′]dithiophene-3,4-difluorothiophene) (PBDT[2F]T) and its nonfluorinated counterpart poly(4,8-bis((2-ethylhexyl)oxy)benzo[1,2-b:4,5-b′]dithiophene-3,4-thiophene) (PBDT[2H]T) combined with PC71BM in bulk heterojunctions. The product of these yields is shown to agree well with the devices' external quantum efficiency. This methodology elucidates in the specific case studied here the origin of improved photocurrents obtained when using PBDT[2F]T instead of PBDT[2H]T as well as upon using solvent additives. Furthermore, a higher charge transfer (CT)-state energy is shown to lead to significantly lower energy losses (resulting in higher VOC) during charge generation compared to P3HT:PCBM.

  15. Color tunable electroluminescence and resistance switching from a ZnO-nanorod–TaO_x–p-GaN heterojunction

    International Nuclear Information System (INIS)

    Zhao, J L; Teo, K L; Zheng, K; Sun, X W

    2016-01-01

    Well-aligned ZnO nanorods have been prepared on p-GaN–sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaO_x is employed as the intermediate layer and an n-ZnO–TaO_x–p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaO_x layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction. (paper)

  16. Large bandgap reduced graphene oxide (rGO) based n-p + heterojunction photodetector with improved NIR performance

    Science.gov (United States)

    Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P.; Pal, Prabir; Singh, Surinder P.

    2018-04-01

    Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p +-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W‑1 and peak detectivity of 2.56 × 1012 Jones under 830 nm illumination (11 μW cm‑2) at 1 V applied bias with fast response (∼460 μs) and recovery time (∼446 μs). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 103%), along with ultrasensitive behavior at low light conditions.

  17. -MoS2 Lateral Heterojunctions

    KAUST Repository

    Li, Ming-yang

    2018-02-28

    2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p–n junction without the necessity of applying an external voltage. However, no scalable processes are reported to construct the devices with such lateral heterostructures. Here, a scalable strategy, two-step and location-selective chemical vapor deposition, is reported to synthesize self-aligned WSe2–MoS2 monolayer lateral heterojunction arrays and demonstrates their light-emitting devices. The proposed fabrication process enables the growth of high-quality interfaces and the first successful observation of electroluminescence at the WSe2–MoS2 lateral heterojunction. The electroluminescence study has confirmed the type-I alignment at the interface rather than commonly believed type-II alignment. This self-aligned growth process paves the way for constructing various 2D lateral heterostructures in a scalable manner, practically important for integrated 2D circuit applications.

  18. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  19. The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells

    Science.gov (United States)

    Sachenko, A. V.; Kryuchenko, Yu. V.; Kostylyov, V. P.; Korkishko, R. M.; Sokolovskyi, I. O.; Abramov, A. S.; Abolmasov, S. N.; Andronikov, D. A.; Bobyl', A. V.; Panaiotti, I. E.; Terukov, E. I.; Titov, A. S.; Shvarts, M. Z.

    2016-03-01

    Temperature dependences of the photovoltaic characteristics of ( p)a-Si/( i)a-Si:H/( n)c-Si singlecrystalline- silicon based heterojunction-with-intrinsic-thin-layer (HIT) solar cells have been measured in a temperature range of 80-420 K. The open-circuit voltage ( V OC), fill factor ( FF) of the current-voltage ( I-U) characteristic, and maximum output power ( P max) reach limiting values in the interval of 200-250 K on the background of monotonic growth in the short-circuit current ( I SC) in a temperature range of 80-400 K. At temperatures below this interval, the V OC, FF, and P max values exhibit a decrease. It is theoretically justified that a decrease in the photovoltaic energy conversion characteristics of solar cells observed on heating from 250 to 400 K is related to exponential growth in the intrinsic conductivity. At temperatures below 200 K, the I-U curve shape exhibits a change that is accompanied by a drop in V OC. Possible factors that account for the decrease in V OC, FF, and P max are considered.

  20. Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

    Science.gov (United States)

    Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

    2017-10-01

    Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ˜50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

  1. Streamline-based microfluidic device

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Kasdan, Harvey (Inventor)

    2013-01-01

    The present invention provides a streamline-based device and a method for using the device for continuous separation of particles including cells in biological fluids. The device includes a main microchannel and an array of side microchannels disposed on a substrate. The main microchannel has a plurality of stagnation points with a predetermined geometric design, for example, each of the stagnation points has a predetermined distance from the upstream edge of each of the side microchannels. The particles are separated and collected in the side microchannels.

  2. In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides

    Science.gov (United States)

    Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei; Jiao, Li-Ying; Huang, Ru; Li, Shu-Shen; Wang, Lin-Wang

    2017-10-01

    As Moore's law approaches its end, two-dimensional (2D) materials are intensely studied for their potentials as one of the "More than Moore' (MM) devices. However, the ultimate performance limits and the optimal design parameters for such devices are still unknown. One common problem for the 2D-material-based device is the relative weak on-current. In this study, two-dimensional Schottky-barrier field-effect transistors (SBFETs) consisting of in-plane heterojunctions of 1T metallic-phase and 2H semiconducting-phase transition-metal dichalcogenides (TMDs) are studied following the recent experimental synthesis of such devices at a much larger scale. Our ab initio simulation reveals the ultimate performance limits of such devices and offers suggestions for better TMD materials. Our study shows that the Schottky-barrier heights (SBHs) of the in-plane 1T/2H contacts are smaller than the SBHs of out-of-plane contacts, and the contact coupling is also stronger in the in-plane contact. Due to the atomic thickness of the monolayer TMD, the average subthreshold swing of the in-plane TMD-SBFETs is found to be close to the limit of 60 mV/dec, and smaller than that of the out-of-plane TMD-SBFET device. Different TMDs are considered and it is found that the in-plane WT e2-SBFET provides the best performance and can satisfy the performance requirement of the sub-10-nm high-performance transistor outlined by the International Technology Roadmap for Semiconductors, and thus could be developed into a viable sub-10-nm MM device in the future.

  3. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Science.gov (United States)

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

  4. Enhanced planar perovskite solar cell efficiency and stability using a perovskite/PCBM heterojunction formed in one step.

    Science.gov (United States)

    Zhou, Long; Chang, Jingjing; Liu, Ziye; Sun, Xu; Lin, Zhenhua; Chen, Dazheng; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

    2018-02-08

    Perovskite/PCBM heterojunctions are efficient for fabricating perovskite solar cells with high performance and long-term stability. In this study, an efficient perovskite/PCBM heterojunction was formed via conventional sequential deposition and one-step formation processes. Compared with conventional deposition, the one-step process was more facile, and produced a perovskite thin film of substantially improved quality due to fullerene passivation. Moreover, the resulting perovskite/PCBM heterojunction exhibited more efficient carrier transfer and extraction, and reduced carrier recombination. The perovskite solar cell device based on one-step perovskite/PCBM heterojunction formation exhibited a higher maximum PCE of 17.8% compared with that from the conventional method (13.7%). The device also showed exceptional stability, retaining 83% of initial PCE after 60 days of storage under ambient conditions.

  5. 3-D modelling of a bilayer heterojunction organic solar cell based on ...

    African Journals Online (AJOL)

    The thin film multilayer stacking theory is applied to the bilayer heterojunction organic solar cell, with the optical matrix of the Abeles theory leading to new expression of generation rate and density of exciton photogenerated in the organic photoactive layer of CuPc/C60. The excitons density is investigated considering the ...

  6. Simulation of a high-efficiency silicon-based heterojunction solar cell

    Science.gov (United States)

    Jian, Liu; Shihua, Huang; Lü, He

    2015-04-01

    The basic parameters of a-Si:H/c-Si heterojunction solar cells, such as layer thickness, doping concentration, a-Si:H/c-Si interface defect density, and the work functions of the transparent conducting oxide (TCO) and back surface field (BSF) layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si:H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p+-a-Si:H/Ag solar cell, a photoelectric conversion efficiency of 27.07% (VOC) 749 mV, JSC: 42.86 mA/cm2, FF: 84.33%) was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si:H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer (HIT) solar cell manufacturing. Project supported by the National Natural Science Foundation of China (No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. FDS-KL2011-04), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  7. Fluorene-based narrow-band-gap copolymers for red light- emitting diodes and bulk heterojunction photovoltaic cells

    Institute of Scientific and Technical Information of China (English)

    Mingliang SUN; Li WANG; Yangjun XIA; Bin DU; Ransheng LIU; Yong CAO

    2008-01-01

    A series of narrow band-gap conjugated copo-lymers (PFO-DDQ) derived from 9,9-dioctylfluorene (DOF) and 2,3-dimethyl-5,8-dithien-2-yl-quinoxalines (DDQ) is prepaid by the palladium-catalyzed Suzuki coupling reaction with the molar feed ratio of DDQ at around 1%,5%,15%,30% and 50%,respectively.The obtained polymers are readily soluble in common organic solvents.The solutions and the thin solid films of the copolymers absorb light from 300-590 nm with two absorbance.peaks at around 380 and 490 nm.The intens-ity of 490 nm peak increases with the increasing DDQ content in the polymers.Efficient energy transfer due to exciton trapping on narrow-band-gap DDQ sites has been observed.The PL emission consists exclusively of DDQ unit emission at around 591 643 nm depending on the DDQ content in solid film.The EL emission peaks are red-shifted from 580 nm for PFO-DDQ1 to 635 nm for PFO-DDQ50.The highest external quantum efficiency achieved with the device configuration ITO/PEDOT/ PVK/PFO-DDQt5/Ba/A1 is 1.33% with a luminous effi-ciency 1.54 cd/A.Bulk heterojunction photovoltaic cells fabricated from composite films of PFO-DDQ30 copoly-mer and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) as electron donor and electron acceptor,respect-ively in device configuration:ITO/PEDOT:PSS/PFO-DDQ30:PCBM/PFPNBr/Al shows power conversion effi-ciencies of 1.18% with open-circuit voltage (Voc) of 0.90 V and short-circuit current density (Jsc) of 2.66 mA/cm2 under an AM1.5 solar simulator (100 mW/cm2).The photocurrent response wavelengths of the PVCs based on PFO-DDQ30/PCBM blends covers 300-700 nm.This indicates that these kinds of low band-gap polymers are promising candidates for polymeric solar cells and red light-emitting diodes.

  8. DeviceNet-based device-level control in SSRF

    CERN Document Server

    Leng Yong Bin; Lu Cheng Meng; Miao Hai Feng; Liu Song Qiang; Shen Guo Bao

    2002-01-01

    The control system of Shanghai Synchrotron Radiation Facility is an EPICS-based distributed system. One of the key techniques to construct the system is the device-level control. The author describes the design and implementation of the DeviceNet-based device controller. A prototype of the device controller was tested in the experiments of magnet power supply and the result showed a precision of 3 x 10 sup - sup 5

  9. Monolayer MoS2 heterojunction solar cells

    KAUST Repository

    Tsai, Menglin

    2014-08-26

    We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.

  10. A self-powered nano-photodetector based on PFH/ZnO nanorods organic/inorganic heterojunction

    Science.gov (United States)

    Li, Xiaoyun; Liu, Wei; Li, Peigang; Song, Jia; An, Yuehua; Shen, Jingqin; Wang, Shunli; Guo, Daoyou

    2018-03-01

    PFH/ZnO nanorods heterojunctions were fabricated by spin-coating p-type Poly (9,9-dihexylfluorene) (PFH) on n-type vertically aligned ZnO nanorod arrays grown by a facile hydrothermal method on indium tin oxide (ITO) transparent conductive glass. A typical p-n junction behavior was observed in the fabricated heterojunction. The current of heterojunction increases and decreases dramatically by switching the illumination on and off at zero bias, showing potential self-powered photodetector applications. The heterojunction were capable of generating negative current when illuminated under an appropriate wavelength. The photoresponse properties of the heterojunction can be tuned by the applied bias. In vacuum, the rectifying behavior disappeared, and show only simple semiconductor behavior. Band structure of the heterojunction was schematic drawn and explain the mechanism of the properties of PFH/ZnO nanorods heterojunctions.

  11. A self-powered nano-photodetector based on PFH/ZnO nanorods organic/inorganic heterojunction

    Directory of Open Access Journals (Sweden)

    Xiaoyun Li

    2018-03-01

    Full Text Available PFH/ZnO nanorods heterojunctions were fabricated by spin-coating p-type Poly (9,9-dihexylfluorene (PFH on n-type vertically aligned ZnO nanorod arrays grown by a facile hydrothermal method on indium tin oxide (ITO transparent conductive glass. A typical p-n junction behavior was observed in the fabricated heterojunction. The current of heterojunction increases and decreases dramatically by switching the illumination on and off at zero bias, showing potential self-powered photodetector applications. The heterojunction were capable of generating negative current when illuminated under an appropriate wavelength. The photoresponse properties of the heterojunction can be tuned by the applied bias. In vacuum, the rectifying behavior disappeared, and show only simple semiconductor behavior. Band structure of the heterojunction was schematic drawn and explain the mechanism of the properties of PFH/ZnO nanorods heterojunctions.

  12. Graphene-based energy devices

    CERN Document Server

    Yusoff, A Rashid bin Mohd

    2015-01-01

    This first book dedicated to the topic provides an up-to-date account of the many opportunities graphene offers for robust, workable energy generation and storage devices. Following a brief overview of the fundamentals of graphene, including the main synthesis techniques, characterization methods and properties, the first part goes on to deal with graphene for energy storage applications, such as lithium-ion batteries, supercapacitors and hydrogen storage. The second part is concerned with graphene-based energy-generation devices, in particular conventional as well as microbial and enzymatic f

  13. Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

    International Nuclear Information System (INIS)

    Zhang, T. C.; Guo, Y.; Mei, Z. X.; Gu, C. Z.; Du, X. L.

    2009-01-01

    Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼10 4 at ±2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated

  14. A dewetting route to grow heterostructured nanoparticles based on thin film heterojunctions.

    Science.gov (United States)

    Li, Junjie; Yin, Deqiang; Li, Qiang; Chen, Chunlin; Huang, Sumei; Wang, Zhongchang

    2015-12-21

    Heterostructured nanoparticles have received considerable attention for their various applications due to their unique and tunable functionalities with respect to their individual bulk constituents. However, the current wet chemical synthesis of multicomponent heterostructured nanoparticles is rather complicated. Here, we report a simple and quick method to fabricate Co-Au dumbbell arrays by dewetting Co/Au heterojunctions on a Si substrate and demonstrate that the Co-Au dumbbells vary in size from 2 to 28 nm. We further show by chemical mapping that Co bells are covered by a pseudomorphic Au wetting layer of ∼4 Å, preventing the bells from oxidation. By controlling the thickness of metal heterojunctions and the annealing time, the morphology of the Co-Au nanoparticle is found to be transformed from the dumbbell to the core shell. This facile route is demonstrated to be useful for fabricating other metal-metal and metal-oxide heterostructures and hence holds technological promise for functional applications.

  15. Electroluminescence and rectifying properties of heterojunction LEDs based on ZnO nanorods

    International Nuclear Information System (INIS)

    Rout, Chandra Sekhar; Rao, C N R

    2008-01-01

    n-ZnO NR/p-Si and n-ZnO NR/p-PEDOT/PSS heterojunction light-emitting diodes (LEDs) have been fabricated with ZnO nanorods (NRs) grown by a low-temperature method as well as by employing pulsed laser deposition (PLD). The low-temperature method involves growing the ZnO nanorods by the reaction of water with zinc metal. The current-voltage (I-V) characteristics of the heterojunctions show good rectifying diode characteristics. The electroluminescence (EL) spectra of the nanorods show an emission band at around 390 nm and defect related bands in the 400-550 nm region. Room-temperature electroluminescence is detected under forward bias for both the heterostructures. With the low-temperature grown nanorods, the defect related bands in the 400-550 nm range are more intense in the EL spectra, whereas with the PLD grown nanorods, only the 390 nm band is prominent

  16. Hybrid bulk heterojunction solar cells based on poly(3-hexylthiophene) and ZnO nanoparticles modified by side-chain functional polythiophenes

    International Nuclear Information System (INIS)

    Li, Fan; Du, Yanhui; Chen, Yiwang

    2012-01-01

    We report the investigation of the hybrid bulk heterojunction solar cells based on the blend of poly(3-hexylthiophene) (P3HT) and ZnO nanoparticles modified by side-chain thiol functional poly(3-thiophenehexanethiol) (P3HT-SH). Grafting of P3HT-SH onto ZnO nanoparticles can promote the dispersion of ZnO nanoparticles within P3HT matrix and facilitate electron injection process into ZnO nanoparticles, resulting in a more efficient photoinduced charge transfer than that in simple physical mixture of P3HT and non-modified ZnO nanoparticles (P3HT/ZnO). Furthermore, the performance of hybrid photovoltaic device based on P3HT/P3HT-SH-modified ZnO blend exhibits an improved device efficiency compared with P3HT/ZnO even before thermal treatment. After being annealed at 80 °C, the P3HT/P3HT-SH-modified ZnO device shows the power conversion efficiency as high as 0.68%, with the short-circuit current density of 1.89 mA/cm 2 , the open-circuit voltage of 0.599 V and a fill factor of 60.5% under AM 1.5 G illumination with 100 mW/cm 2 light intensity. - Highlights: ► Hybrid solar cells based on poly(3-hexylthiophene) and modified ZnO nanoparticles ► ZnO nanoparticles modified by side-chain functional polythiophenes ► Uniform dispersion and intimate contact between polymers and nanoparticles ► Efficient charge transfer leading to the improvement of device efficiency

  17. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells.

    Science.gov (United States)

    Wong, Terence K S; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K

    2016-04-07

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu₂O), cupric oxide (CuO) and copper (III) oxide (Cu₄O₃) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu₂O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of Al x Ga 1- x O onto thermal Cu₂O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu₂O nanopowder. CuO/Cu₂O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu₄O₃/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10 -2 %.

  18. Organic bulk heterojunction photovoltaic structures: design, morphology and properties

    International Nuclear Information System (INIS)

    Bulavko, G V; Ishchenko, A A

    2014-01-01

    Main approaches to the design of organic bulk heterojunction photovoltaic structures are generalized and systematized. Novel photovoltaic materials based on fullerenes, organic dyes and related compounds, graphene, conjugated polymers and dendrimers are considered. The emphasis is placed on correlations between the chemical structure and properties of materials. The effect of morphology of the photoactive layer on the photovoltaic properties of devices is analyzed. Main methods of optimization of the photovoltaic properties are outlined. The bibliography includes 338 references

  19. Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

    Science.gov (United States)

    Zhang, Jiaye; Han, Shaobo; Luo, Weihuang; Xiang, Shuhuai; Zou, Jianli; Oropeza, Freddy E.; Gu, Meng; Zhang, Kelvin H. L.

    2018-04-01

    Transparent oxide semiconductors hold great promise for many optoelectronic devices such as transparent electronics, UV-emitting devices, and photodetectors. A p-n heterojunction is the most ubiquitous building block to realize these devices. In this work, we report the fabrication and characterization of the interface properties of a transparent heterojunction consisting of p-type NiO and n-type perovskite BaSnO3. We show that high-quality NiO thin films can be epitaxially grown on BaSnO3 with sharp interfaces because of a small lattice mismatch (˜1.3%). The diode fabricated from this heterojunction exhibits rectifying behavior with a ratio of 500. X-ray photoelectron spectroscopy reveals a type II or "staggered" band alignment with valence and conduction band offsets of 1.44 eV and 1.86 eV, respectively. Moreover, a large upward band bending potential of 0.90 eV for BaSnO3 and a downward band bending potential of 0.15 eV for NiO were observed in the interface region. Such electronic properties have important implication for optoelectronic applications as the large built-in potential provides favorable energetics for photo-generated electron-hole separation/migration.

  20. Vertical stratification and its impact on device performance in a polycarbazole based copolymer solar cells

    OpenAIRE

    Wang, T.; Scarratt, N.W.; Yi, H.; Coleman, I.F.; Zhang, Y.; Grant, R.T.; Yao, J.; Skoda, M.W.A.; Dunbar, A.D.F.; Jones, R.A.L.; Iraqi, A.; Lidzey, D.G.

    2015-01-01

    Using neutron-reflectivity, we study vertical stratification and device performance in bulk hetero-junction organic photovoltaic (OPV) cells consisting of a blend of PC71BM with a carbazole-based donor–acceptor copolymer PCDTBT1. We find that when the blend is cast on a PEDOT:PSS/ITO anode, a PC71BM-depleted (polymer-rich) layer is formed at the PEDOT:PSS interface, whilst a PC71BM-depleted layer is instead located at the air-interface when the same blend is cast on a solution processed MoOx ...

  1. Interfacial effects in organic semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Stadler, P.

    2011-01-01

    The field of organic electronics has systematically gained interest in recent years, technologically and scientifically advances have been made leading to practical applications such as organic light emitting diodes, organic field-effect transistors and organic photo-voltaic cells. In this thesis a fundamental study on organic molecules is presented targeting on interfacial effects at organic heterojunctions. Generally in organic electronic devices interfaces are considered as key parameters for achieving high performance applications. Therefore in this work the emphasis is to investigate layer-by-layer heterojunctions of organic molecules. Defined heterojunctions at inorganic III-V semiconductors form superlattices and quantum-wells, which lead to interfacial effects summarized as quantum confinement and two-dimensional electron gases. Although organic molecules differ in many aspects from their inorganic counterparts, similar effects can be theoretically expected at organic heterojunctions as well. Organic molecules form van-der-Waals type crystals and domains which are macroscopically anisotropic and polycrystalline or amorphous. Organic molecules are intrinsic semiconductors and at interfaces dipoles are formed, which control the energy level alignment. In order to characterize such structures and compare them to inorganic superlattices and quantum-wells it is necessary to induce charge carriers. In this work this is established either by interfacial doping using high-performance dielectrics in a field-effect transistor structure or by photo-doping by exciting a donor-acceptor bilayer. In both cases C 60 was chosen as organic semiconductor exhibiting good acceptor properties and an electron mobility in the range of 0.5 cm 2 V -1 s -1 . The fabrication of well-defined few-molecular layers allows probing directly at the interface. Spectroscopic methods and transport measurements are applied for characterization: Photoemission spectroscopy, absorption and photo

  2. Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

    International Nuclear Information System (INIS)

    Hung Nguyen, V; Mazzamuto, F; Saint-Martin, J; Bournel, A; Dollfus, P

    2012-01-01

    Using atomistic quantum simulation based on a tight binding model, we have investigated the transport characteristics of graphene nanomesh-based devices and evaluated the possibilities of observing negative differential conductance. It is shown that by taking advantage of bandgap opening in the graphene nanomesh lattice, a strong negative differential conductance effect can be achieved at room temperature in pn junctions and n-doped structures. Remarkably, the effect is improved very significantly (with a peak-to-valley current ratio of a few hundred) and appears to be weakly sensitive to the transition length in graphene nanomesh pn hetero-junctions when inserting a pristine (gapless) graphene section in the transition region between n and p zones. The study therefore suggests new design strategies for graphene electronic devices which may offer strong advantages in terms of performance and processing over the devices studied previously. (paper)

  3. Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

    Science.gov (United States)

    Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

    2018-02-01

    The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

  4. Analysis of electrical properties of heterojunction based on ZnIn2Se4

    Science.gov (United States)

    Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

    2017-04-01

    Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

  5. Interface-dependent rectifying TbMnO3-based heterojunctions

    Directory of Open Access Journals (Sweden)

    Yimin Cui

    2011-12-01

    Full Text Available We report the fabrication and characterizations of oxide heterojunctions composed of TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The heterojunctions exhibit rich rectifying characteristics, depending on not only the measurement temperature but also the growth temperature: at 300 K, good rectification appears in both samples; at lower temperatures, the rectification is much smaller in the sample grown at 700 °C, whereas it exhibits a reversed bias dependence and reaches ∼5000 in the sample grown at 780 °C. Regarding to the transport mechanism, the conduction appears to be Schottky-emission-like at high temperatures in both junctions, indicating well-defined band alignment at interface; on the other hand, the space-charge-limited mechanism dictates the low temperature transport. Furthermore, the temperature and frequency dependent capacitance-loss data suggest that the transport dynamics is associated with multiple thermally activated relaxation processes. Finally, transmission electron microscopy studies shed light on the crystalline quality of the junction interfaces, which is believed to dictate the corresponding transport properties.

  6. Bolometric Device Based on Fluxoid Quantization

    Science.gov (United States)

    Bonetti, Joseph A.; Kenyon, Matthew E.; Leduc, Henry G.; Day, Peter K.

    2010-01-01

    The temperature dependence of fluxoid quantization in a superconducting loop. The sensitivity of the device is expected to surpass that of other superconducting- based bolometric devices, such as superconducting transition-edge sensors and superconducting nanowire devices. Just as important, the proposed device has advantages in sample fabrication.

  7. Boosting the Visible-Light Photoactivity of BiOCl/BiVO4/N-GQD Ternary Heterojunctions Based on Internal Z-Scheme Charge Transfer of N-GQDs: Simultaneous Band Gap Narrowing and Carrier Lifetime Prolonging.

    Science.gov (United States)

    Zhu, Mingyue; Liu, Qian; Chen, Wei; Yin, Yuanyuan; Ge, Lan; Li, Henan; Wang, Kun

    2017-11-08

    The efficient separation of photogenerated electron-hole pairs in photoactive materials is highly desired, allowing their transfer to specific sites for undergoing redox reaction in various applications. The construction of ternary heterojunctions is a practical strategy to enhance the migration of photogenerated electron that realizes the synergistic effect of multicomponents rather than the simple overlay of single component. Here, we demonstrate an available way to fabricate new BiOCl/BiVO 4 /nitrogen-doped graphene quantum dot (N-GQD) ternary heterojunctions that exhibit higher efficiency in charge separation than any binary heterojunction or pure material under visible-light irradiation. UV-vis diffuse reflectance spectroscopy demonstrated that the proposed BiOCl/BiVO 4 /N-GQD ternary heterojunctions possess the narrower band gap energy. More importantly, the ternary heterojunctions reveal the prolonged lifetime of photogenerated charges and enhanced the separation efficiency of photogenerated electron-hole pairs, which may be ascribed to sensitization based on an internal Z-scheme charge transfer at the interface of N-GQDs with oxygen functional groups. Furthermore, we examine the photoactive performance of proposed ternary heterojunctions in aqueous solution by using the photodegradation of bisphenol A as a model system and BiOCl/BiVO 4 /N-GQD ternary heterojunctions also display a dramatically enhanced photodegradation rate. The proposed charge separation and transfer process of BiOCl/BiVO 4 /N-GQD ternary heterojunctions for the enhanced photoactivity were deduced by electrochemical measurements, photoluminescence, and electron spin resonance. The results demonstrate that a Z-scheme charge process was formed between BiOCl/BiVO 4 binary heterojunctions and N-GQDs, leading to an efficient charge carrier separation and strong photocatalytic ability. Notably, this work may assist in a better understanding of the role of N-GQDs in kinds of heterojunctions

  8. Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes

    International Nuclear Information System (INIS)

    Yang, Yanqin; Li, Songzhan; Liu, Feng; Zhang, Nangang; Liu, Kan; Wang, Shengxiang; Fang, Guojia

    2017-01-01

    Light-emitting diodes based on p-SnO 2 /i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO 2 /i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

  9. Bidirectional electroluminescence from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yanqin [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Li, Songzhan, E-mail: liszhan@whu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Feng; Zhang, Nangang; Liu, Kan [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Wang, Shengxiang, E-mail: sxwang@wtu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Fang, Guojia [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

    2017-06-15

    Light-emitting diodes based on p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

  10. Rectifying performance in zigzag graphene nanoribbon heterojunctions with different edge hydrogenations

    International Nuclear Information System (INIS)

    Cao, Can; Chen, Ling-Na; Long, Meng-Qiu; Xu, Hui

    2013-01-01

    Using nonequilibrium Green's functions in combination with the density functional theory, we investigated the electronic transport behaviors of zigzag graphene nanoribbon (ZGNR) heterojunctions with different edge hydrogenations. The results show that electronic transport properties of ZGNR heterojunctions can be modulated by hydrogenations, and prominent rectification effects can be observed. We propose that the edge dihydrogenation leads to a blocking of electronic transfer, as well as the changes of the distribution of the frontier orbital at negative/positive bias might be responsible for the rectification effects. These results may be helpful for designing practical devices based on graphene nanoribbons.

  11. Probing the Energy Level Alignment and the Correlation with Open-Circuit Voltage in Solution-Processed Polymeric Bulk Heterojunction Photovoltaic Devices.

    Science.gov (United States)

    Yang, Qing-Dan; Li, Ho-Wa; Cheng, Yuanhang; Guan, Zhiqiang; Liu, Taili; Ng, Tsz-Wai; Lee, Chun-Sing; Tsang, Sai-Wing

    2016-03-23

    Energy level alignment at the organic donor and acceptor interface is a key to determine the photovoltaic performance in organic solar cells, but direct probing of such energy alignment is still challenging especially for solution-processed bulk heterojunction (BHJ) thin films. Here we report a systematic investigation on probing the energy level alignment with different approaches in five commonly used polymer:[6,6]-phenyl-C71-butyric acid methyl ester (PCBM) BHJ systems. We find that by tuning the weight ratio of polymer to PCBM the electronic features from both polymer and PCBM can be obtained by photoemission spectroscopy. Using this approach, we find that some of the BHJ blends simply follow vacuum level alignment, but others show strong energy level shifting as a result of Fermi level pinning. Independently, by measuring the temperature-dependent open-circuit voltage (VOC), we find that the effective energy gap (Eeff), the energy difference between the highest occupied molecular orbital of the polymer donor (EHOMO-D) and lowest unoccupied molecular orbital of the PCBM acceptor (ELUMO-A), obtained by photoemission spectroscopy in all polymer:PCBM blends has an excellent agreement with the extrapolated VOC at 0 K. Consequently, the photovoltage loss of various organic BHJ photovoltaic devices at room temperature is in a range of 0.3-0.6 V. It is believed that the demonstrated direct measurement approach of the energy level alignment in solution-processed organic BHJ will bring deeper insight into the origin of the VOC and the corresponding photovoltage loss mechanism in organic photovoltaic cells.

  12. Lead Acetate Based Hybrid Perovskite Through Hot Casting for Planar Heterojunction Solar Cells

    Science.gov (United States)

    Shin, Gwang Su; Choi, Won-Gyu; Na, Sungjae; Gökdemir, Fatma Pinar; Moon, Taeho

    2018-03-01

    Flawless coverage of a perovskite layer is essential in order to achieve realistic high-performance planar heterojunction solar cells. We present that high-quality perovskite layers can be efficiently formed by a novel hot casting route combined with MAI (CH3NH3I) and non-halide lead acetate (PbAc2) precursors under ambient atmosphere. Casting temperature is controlled to produce various perovskite microstructures and the resulted crystalline layers are found to be comprised of closely packed islands with a smooth surface structure. Lead acetate employed perovskite solar cells are fabricated using PEDOT:PSS and PCBM charge transporting layers, in p- i- n type planar architecture. Especially, the outstanding open-circuit voltage demonstrates the high crystallinity and dense coverage of the produced perovskite layers by this facile route.

  13. Hybrid phototransistors based on bulk heterojunction films of poly(3-hexylthiophene) and zinc oxide nanoparticle.

    Science.gov (United States)

    Nam, Sungho; Seo, Jooyeok; Park, Soohyeong; Lee, Sooyong; Jeong, Jaehoon; Lee, Hyena; Kim, Hwajeong; Kim, Youngkyoo

    2013-02-01

    Hybrid phototransistors (HPTRs) were fabricated on glass substrates using organic/inorganic hybrid bulk heterojunction films of p-type poly(3-hexylthiophene) (P3HT) and n-type zinc oxide nanoparticles (ZnO(NP)). The content of ZnO(NP) was varied up to 50 wt % in order to understand the composition effect of ZnO(NP) on the performance of HPTRs. The morphology and nanostructure of the P3HT:ZnO(NP) films was examined by employing high resolution electron microscopes and synchrotron radiation grazing angle X-ray diffraction system. The incident light intensity (P(IN)) was varied up to 43.6 μW/cm², whereas three major wavelengths (525 nm, 555 nm, 605 nm) corresponded to the optical absorption of P3HT were applied. Results showed that the present HPTRs showed typical p-type transistor performance even though the n-type ZnO(NP) content increased up to 50 wt %. The highest transistor performance was obtained at 50 wt %, whereas the lowest performance was measured at 23 wt % because of the immature bulk heterojunction morphology. The drain current (I(D)) was proportionally increased with P(IN) due to the photocurrent generation in addition to the field-effect current. The highest apparent and corrected responsivities (R(A) = 4.7 A/W and R(C) = 2.07 A/W) were achieved for the HPTR with the P3HT:ZnO(NP) film (50 wt % ZnO(NP)) at P(IN) = 0.27 μW/cm² (555 nm).

  14. Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

    Directory of Open Access Journals (Sweden)

    Kovaliuk T. T.

    2015-12-01

    Full Text Available The paper reports on the results of the studies of magnetic, kinetic and optical properties of Cu2ZnSnTe4 crystals. The Cu2ZnSnTe4 crystals showed diamagnetic properties (the magnetic susceptibility almost independent of the magnetic field and temperature. The Cu2ZnSnTe4 crystals possessed p-type of conductivity and the Hall coefficient was independent on temperature. The temperature dependence of the electrical conductivity of the Cu2ZnSnTe4 crystal shows metallic character, i. e. decreases with the increase of temperature, that is caused by the lower charge carrier mobility at higher temperature. Thermoelectric power of the samples ispositive that also indicates on the prevalence of p-type conductivity. Heterojunctions n-TiN/p-Cu2ZnSnTe4, n-TiO2/p-Cu2ZnSnTe4 and n-MoO/p-Cu2ZnSnTe4 were fabricated by the reactive magnetron sputtering of TiN, TiO2 and MoOx thin films, respectively, onto the substrates made of the Cu2ZnSnTe4 crystals. The dominating current transport mechanisms in the n-TiN/p-Cu2ZnSnTe4 and n-TiO2/p-Cu2ZnSnTe4 heterojunctions were established to be the tunnel-recombination mechanism at forward bias and tunneling at reverse bias.

  15. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei

    2016-08-30

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

  16. Nanotetrapods: quantum dot hybrid for bulk heterojunction solar cells

    Science.gov (United States)

    2013-01-01

    Hybrid thin film solar cell based on all-inorganic nanoparticles is a new member in the family of photovoltaic devices. In this work, a novel and performance-efficient inorganic hybrid nanostructure with continuous charge transportation and collection channels is demonstrated by introducing CdTe nanotetropods (NTs) and CdSe quantum dots (QDs). Hybrid morphology is characterized, demonstrating an interpenetration and compacted contact of NTs and QDs. Electrical measurements show enhanced charge transfer at the hybrid bulk heterojunction interface of NTs and QDs after ligand exchange which accordingly improves the performance of solar cells. Photovoltaic and light response tests exhibit a combined optic-electric contribution from both CdTe NTs and CdSe QDs through a formation of interpercolation in morphology as well as a type II energy level distribution. The NT and QD hybrid bulk heterojunction is applicable and promising in other highly efficient photovoltaic materials such as PbS QDs. PMID:24139059

  17. Semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  18. Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

    Directory of Open Access Journals (Sweden)

    Song Feng

    2018-01-01

    Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

  19. Synthesis of p-type nickel oxide nanosheets on n-type titanium dioxide nanorod arrays for p-n heterojunction-based UV photosensor

    Science.gov (United States)

    Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

    2018-05-01

    Titanium dioxide (TiO2) nanorod arrays (TNAs) were synthesized and deposited on fluorine tin oxide (FTO)-coated glass substrate using a novel and facile immersion method in a glass container. The synthesis and deposition of p-type nickel oxide (NiO) nanosheets (NS) on the n-type TNAs was investigated in the p-n heterojunction photodiode (PD) for the application of ultraviolet (UV) photosensor. The fabricated TNAs/NiO NS based UV photosensor exhibited a highly increased photocurrent of 4.3 µA under UV radiation (365 nm, 750 µW/cm2) at 1.0 V reverse bias. In this study, the fabricated TNAs/NiO NS p-n heterojunction based photodiode showed potential applications for UV photosensor based on the stable photo-generated current attained under UV radiation.

  20. Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

    International Nuclear Information System (INIS)

    Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

    2015-01-01

    Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10 4 at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements

  1. Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Manisha [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Physics department, Miranda House, University of Delhi, Delhi-110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-06-15

    Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.

  2. A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

    KAUST Repository

    Flemban, Tahani H.

    2017-09-19

    Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

  3. Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversion efficiency via adopting ultrathin Au contact

    Science.gov (United States)

    Fan, Lin; Wang, Fengyou; Liang, Junhui; Yao, Xin; Fang, Jia; Zhang, Dekun; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2017-01-01

    A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open-circuit voltage top cell. Here, we present a four-terminal tandem solar cell architecture consisting of a self-filtered planar architecture perovskite top cell and a silicon heterojunction bottom cell. A transparent ultrathin gold electrode has been used in perovskite solar cells to achieve a semi-transparent device. The transparent ultrathin gold contact could provide a better electrical conductivity and optical reflectance-scattering to maintain the performance of the top cell compared with the traditional metal oxide contact. The four-terminal tandem solar cell yields an efficiency of 14.8%, with contributions of the top (8.98%) and the bottom cell (5.82%), respectively. We also point out that in terms of optical losses, the intermediate contact of self-filtered tandem architecture is the uppermost problem, which has been addressed in this communication, and the results show that reducing the parasitic light absorption and improving the long wavelength range transmittance without scarifying the electrical properties of the intermediate hole contact layer are the key issues towards further improving the efficiency of this architecture device. Project supported by the International Cooperation Projects of the Ministry of Science and Technology (No. 2014DFE60170), the National Natural Science Foundation of China (Nos. 61474065, 61674084), the Tianjin Research Key Program of Application Foundation and Advanced Technology (No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province (No. BE2014147-3), and the 111 Project (No. B16027).

  4. -MoS2 Lateral Heterojunctions

    KAUST Repository

    Li, Ming-yang; Pu, Jiang; Huang, Jing-Kai; Miyauchi, Yuhei; Matsuda, Kazunari; Takenobu, Taishi; Li, Lain-Jong

    2018-01-01

    2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p

  5. Zero-biased solar-blind photodetector based on ZnBeMgO/Si heterojunction

    International Nuclear Information System (INIS)

    Yang, C; Li, X M; Yu, W D; Gao, X D; Cao, X; Li, Y Z

    2009-01-01

    An n-type Zn 1-x-y Be x Mg y O thin film was deposited on a p-type Si substrate by pulsed laser deposition to obtain a solar-blind photodetector. The spectral response characteristic with a cutoff wavelength of 280 nm was demonstrated to realize the photodetection of the solar-blind wave zone. The responsivity of the device was improved by inserting an Al-doped ZnO (AZO) contact layer, which was expected to enhance the carrier collection efficiency significantly. Correspondingly, the peak responsivity was improved from 0.003 to 0.11 A W -1 at zero bias, and a high external quantum efficiency of 53% at 270 nm was achieved. The fast rise time reached 20 ns. This work demonstrated the possibility of a wurtzite ZnO based oxide system to realize high performance zero-biased solar-blind photodetectors. (fast track communication)

  6. Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Puzanov, A. S.; Obolenskiy, S. V., E-mail: obolensk@rf.unn.ru; Kozlov, V. A. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

    2016-12-15

    We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.

  7. Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Karaagac, Hakan, E-mail: hkaraagac@ucdavis.edu [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States); Yengel, Emre; Saif Islam, M. [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States)

    2012-04-25

    Highlights: Black-Right-Pointing-Pointer Undoped and Al doped ZnO (AZO) thin films were successfully prepared using sol-gel technique. Black-Right-Pointing-Pointer Structural analysis has revealed that Al doping has a significant influence on preferential orientation. Black-Right-Pointing-Pointer It has been observed that wrinkles forms on the surface of films when annealed with a fast heat ramp up rate. Black-Right-Pointing-Pointer Optical analysis has revealed that that the band gap energy of ZnO thin film increases with increasing Al doping concentration. Black-Right-Pointing-Pointer The lowest resistivity is observed for 1% Al ZnO thin film, which is 2.2 Multiplication-Sign 10{sup -2} ({Omega} cm). - Abstract: ZnO and some of its ternary wide-bandgap alloys offer interesting opportunities for designing materials with tunable band gaps, strong piezoresistivity and controlled electrical conductance with high optical transparency. Synthesizing these materials on arbitrary substrates using low-cost and unconventional techniques can help in integrating semiconductors with different physical, electrical, and optical characteristics on a single substrate for heterogeneous integration of multifunctional devices. Here we report the successful synthesis of aluminum (Al) doped ZnO (AZO) thin films on soda-lime glass, silicon and fluorine doped tin oxide (FTO) pre-coated glass substrates by using sol-gel deposition method at ambient condition. X-ray diffraction (XRD) analysis revealed that varying degree of Al doping significantly impacts the crystal orientation, semiconductor bandgap and optical transparency of the film. Crystal structure of the film is also found to be strongly correlated to the characteristics of the substrate material. The impact of heating rate during post annealing process is studied and optimized in order to improve the surface morphology of the deposited films. Optical characterizations have revealed that bandgap energy of AZO films can be tuned

  8. Excitonic processes at organic heterojunctions

    Science.gov (United States)

    He, ShouJie; Lu, ZhengHong

    2018-02-01

    Understanding excitonic processes at organic heterojunctions is crucial for development of organic semiconductor devices. This article reviews recent research on excitonic physics that involve intermolecular charge transfer (CT) excitons, and progress on understanding relationships between various interface energy levels and key parameters governing various competing interface excitonic processes. These interface excitonic processes include radiative exciplex emission, nonradiative recombination, Auger electron emission, and CT exciton dissociation. This article also reviews various device applications involving interface CT excitons, such as organic light-emitting diodes (OLEDs), organic photovoltaic cells, organic rectifying diodes, and ultralow-voltage Auger OLEDs.

  9. Synthesis and Characterization of Reduced Graphene Oxide/Rhodamine 101 (rGO-Rh101) Nanocomposites and Their Heterojunction Performance in rGO-Rh101/ p-Si Device Configuration

    Science.gov (United States)

    Batır, G. Güven; Arık, Mustafa; Caldıran, Zakir; Turut, Abdulmecit; Aydogan, Sakir

    2018-01-01

    Reduced graphene oxide (rGO)-rhodamine 101 (Rh101) nanocomposites with different ratios of rGO have been synthesized in aqueous medium by ultrasonic homogenization. The fluorescence of Rh101 as measured using a laser dye with high fluorescence quantum yield was substantially quenched with increasing amount of rGO in the nanocomposite. Formation of rGO-Rh101 nanocomposites was confirmed by x-ray diffraction analysis, scanning electron microscopy, ultraviolet-visible (UV-Vis) spectroscopy, and fluorescence microscopy. Furthermore, rGO-Rh101 nanocomposite/ p-Si heterojunctions were synthesized, all of which showed good rectifying behavior. The electrical characteristics of these devices were analyzed using current-voltage ( I- V) measurements to determine the ideality factor and barrier height. The experimental results confirmed the presence of lateral inhomogeneity in the effective barrier height of the rGO-Rh101 nanocomposite/ p-Si heterojunctions. In addition to I- V measurements, one device was analyzed in more detail using frequency-dependent capacitance-voltage measurements. All electrical measurements were carried out at room temperature and in the dark.

  10. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

    2014-01-01

    We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  11. Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction

    KAUST Repository

    Sun, Haiding; Park, Young Jae; Li, Kuang-Hui; Torres Castanedo, C. G.; Alowayed, Abdulmohsen; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-01-01

    Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.

  12. Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction

    KAUST Repository

    Sun, Haiding

    2017-09-21

    Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.

  13. Difluorobenzothiadiazole based two-dimensional conjugated polymers with triphenylamine substituted moieties as pendants for bulk heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    W. H. Lee

    2017-11-01

    Full Text Available Three donor/acceptor (D/A-type two-dimensional polythiophenes (PTs; PBTFA13, PBTFA12, PBTFA11 featuring difluorobenzothiadiazole (DFBT derivatives as the conjugated (acceptor units in the polymer backbone and tertbutyl–substituted triphenylamine (tTPA-containing moieties as (donor pendants have been synthesized and characterized. These PTs exhibited good thermal stabilities, broad absorption spectra, and narrow optical band gaps. The cutoff wavelength of the UV–Vis absorption band was red-shifted upon increasing the content of the DFBT units in the PTs. Bulk heterojunction solar cells having an active layer comprising blends of the PTs and fullerene derivatives [6,6] phenyl-C61/71-butyric acid methyl ester (PC61BM/PC71BM were fabricated; their photovoltaic performance was strongly dependent on the content of the DFBT derivative in the PT. Incorporating a suitable content of the DFBT derivative in the polymer backbone enhanced the solar absorption ability and conjugation length of the PTs. The photovoltaic properties of the PBTFA13-based solar cells were superior to those of the PBTFA11- and PBTFA12-based solar cells.

  14. Resistance change effect in SrTiO3/Si (001) isotype heterojunction

    Science.gov (United States)

    Huang, Xiushi; Gao, Zhaomeng; Li, Pei; Wang, Longfei; Liu, Xiansheng; Zhang, Weifeng; Guo, Haizhong

    2018-02-01

    Resistance switching has been observed in double and multi-layer structures of ferroelectric films. The higher switching ratio opens up a vast path for emerging ferroelectric semiconductor devices. An n-n+ isotype heterojunction has been fabricated by depositing an oxide SrTiO3 layer on a conventional n-type Si (001) substrate (SrTiO3/Si) by pulsed laser disposition. Rectification and resistive switching behaviors in the n-n+ SrTiO3/Si heterojunction were observed by a conductive atomic force microscopy, and the n-n+ SrTiO3/Si heterojunction exhibits excellent endurance and retention characteristics. The possible mechanism was proposed based on the band structure of the n-n+ SrTiO3/Si heterojunction, and the observed electrical behaviors could be attributed to the modulation effect of the electric field reversal on the width of accumulation and the depletion region, as well as the height of potential of the n-n+ junction formed at the STO/Si interface. Moreover, oxygen vacancies are also indicated to play a crucial role in causing insulator to semiconductor transition. These results open the way to potential application in future microelectronic devices based on perovskite oxide layers on conventional semiconductors.

  15. Flexible ultraviolet photodetectors based on ZnO-SnO2 heterojunction nanowire arrays

    Science.gov (United States)

    Lou, Zheng; Yang, Xiaoli; Chen, Haoran; Liang, Zhongzhu

    2018-02-01

    A ZnO-SnO2 nanowires (NWs) array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I on/I off ratios (up to 103), good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices. Project supported by the National Science Foundation of China (No. 61504136) and the State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine and Physics, Chinese Academy of Sciences.

  16. Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-05-01

    Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

  17. Graphene-Based Integrated Photovoltaic Energy Harvesting/Storage Device.

    Science.gov (United States)

    Chien, Chih-Tao; Hiralal, Pritesh; Wang, Di-Yan; Huang, I-Sheng; Chen, Chia-Chun; Chen, Chun-Wei; Amaratunga, Gehan A J

    2015-06-24

    Energy scavenging has become a fundamental part of ubiquitous sensor networks. Of all the scavenging technologies, solar has the highest power density available. However, the energy source is erratic. Integrating energy conversion and storage devices is a viable route to obtain self-powered electronic systems which have long-term maintenance-free operation. In this work, we demonstrate an integrated-power-sheet, consisting of a string of series connected organic photovoltaic cells (OPCs) and graphene supercapacitors on a single substrate, using graphene as a common platform. This results in lighter and more flexible power packs. Graphene is used in different forms and qualities for different functions. Chemical vapor deposition grown high quality graphene is used as a transparent conductor, while solution exfoliated graphene pastes are used as supercapacitor electrodes. Solution-based coating techniques are used to deposit the separate components onto a single substrate, making the process compatible with roll-to-roll manufacture. Eight series connected OPCs based on poly(3-hexylthiophene)(P3HT):phenyl-C61-butyric acid methyl ester (PC60 BM) bulk-heterojunction cells with aluminum electrodes, resulting in a ≈5 V open-circuit voltage, provide the energy harvesting capability. Supercapacitors based on graphene ink with ≈2.5 mF cm(-2) capacitance provide the energy storage capability. The integrated-power-sheet with photovoltaic (PV) energy harvesting and storage functions had a mass of 0.35 g plus the substrate. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Buried MoO x/Ag Electrode Enables High-Efficiency Organic/Silicon Heterojunction Solar Cells with a High Fill Factor.

    Science.gov (United States)

    Xia, Zhouhui; Gao, Peng; Sun, Teng; Wu, Haihua; Tan, Yeshu; Song, Tao; Lee, Shuit-Tong; Sun, Baoquan

    2018-04-25

    Silicon (Si)/organic heterojunction solar cells based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n-type Si have attracted wide interests because they promise cost-effectiveness and high-efficiency. However, the limited conductivity of PEDOT:PSS leads to an inefficient hole transport efficiency for the heterojunction device. Therefore, a high dense top-contact metal grid electrode is required to assure the efficient charge collection efficiency. Unfortunately, the large metal grid coverage ratio electrode would lead to undesirable optical loss. Here, we develop a strategy to balance PEDOT:PSS conductivity and grid optical transmittance via a buried molybdenum oxide/silver grid electrode. In addition, the grid electrode coverage ratio is optimized to reduce its light shading effect. The buried electrode dramatically reduces the device series resistance, which leads to a higher fill factor (FF). With the optimized buried electrode, a record FF of 80% is achieved for flat Si/PEDOT:PSS heterojunction devices. With further enhancement adhesion between the PEDOT:PSS film and Si substrate by a chemical cross-linkable silance, a power conversion efficiency of 16.3% for organic/textured Si heterojunction devices is achieved. Our results provide a path to overcome the inferior organic semiconductor property to enhance the organic/Si heterojunction solar cell.

  19. Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

    International Nuclear Information System (INIS)

    Zhang, Liping; Liu, Wenzhu; Liu, Jinning; Shi, Jianhua; Meng, Fanying; Liu, Zhengxin; Guo, Wanwu; Bao, Jian

    2016-01-01

    The positive roles of H 2 -plasma treatment (HPT) have been investigated by using different treatment procedures in view of the distinctly improved passivation performance of amorphous-crystalline silicon heterojunctions (SHJs). It has been found that a hydrogenated amorphous silicon thin film and crystalline silicon (a-Si:H/c-Si) interface with a high stretching mode (HSM) is detrimental to passivation. A moderate pre-HPT introduces atomic H, which plays an effective tuning role in decreasing the interfacial HSM; unfortunately, an epitaxial layer is formed. Further improvement in passivation can be achieved in terms of increasing the HSM of a-Si:H film treated by appropriate post-HPT based on the a-Si:H thickness. The minority carrier lifetime of crystalline wafers can be improved by treated films containing a certain quantity of crystallites. The microstructure factor R and the maximum intensity of the dielectric function ε 2max have been found to be critical microstructure parameters that describe high-quality a-Si:H passivation layers, which are associated with the amorphous-to-microcrystalline transition phase induced by multi-step HPT. Finally, the open circuit voltage and conversion efficiency of the SHJ solar cell can be improved by implementing an effective HPT process. (paper)

  20. Molecular orientation and electronic structure at organic heterojunction interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Shu [Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 Singapore (Singapore); Zhong, Jian Qiang; Wee, Andrew T.S. [Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Chen, Wei, E-mail: phycw@nus.edu.sg [Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); National University of Singapore (Suzhou) Research Institute, Suzhou (China)

    2015-10-01

    Highlights: • Molecular orientation at the organic heterojunction interfaces. • Energy level alignments at the organic heterojunction interfaces. • Gap-states mediated interfacial energy level alignment. - Abstract: Due to the highly anisotropic nature of π-conjugated molecules, the molecular orientation in organic thin films can significantly affect light absorption, charge transport, energy level alignment (ELA) and hence device performance. Synchrotron-based near-edge X-ray absorption fine structure (NEXAFS) spectroscopy represents a powerful technique for probing molecular orientation. The aim of this review paper is to provide a balanced assessment on the investigation of molecular orientation at the organic–organic heterojunction (OOH) interface by NEXAFS, as well as the gap-states mediated orientation dependent energy level alignment at OOH interfaces. We highlight recent progress in elucidating molecular orientation at OOH interfaces dominated by various interfacial interactions, gap-states controlled orientation dependent energy level alignments at OOH interfaces, and the manipulations of molecular orientation and ELA in OOH.

  1. 2 and 3 µm passively Q-switched bulk pulse laser based on a MoS2/graphene heterojunction

    Science.gov (United States)

    Wang, Xihu; Xu, Jinlong; Sun, Yijian; Feng, Wendou; You, Zhenyu; Sun, Dunlu; Tu, Chaoyang

    2018-01-01

    We report for the first time that a MoS2/graphene heterojunction can behave as a saturable absorber to realize 2 and 3 µm passively Q-switched bulk lasers. This heterojunction is prepared through a facile hydrothermal method. For the 2 µm laser, a stable pulse is obtained with a pulse duration of 473 ns, output power of 553 mW, pulse energy of 5.267 µJ and repetition rate of 105 kHz. For the 3 µm laser, a pulse duration of 355 ns is observed with an average output power of 112 mW and pulse energy of 0.889 µJ. These results indicate the great potential of MoS2/graphene heterojunctions for realizing mid-infrared pulse lasers.

  2. Organic Nonvolatile Memory Devices Based on Ferroelectricity

    NARCIS (Netherlands)

    Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  3. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  4. Building blocks of Collagen based biomaterial devices

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. Building blocks of Collagen based biomaterial devices. Collagen as a protein. Collagen in tissues and organs. Stabilizing and cross linking agents. Immunogenicity. Hosts (drugs). Controlled release mechanisms of hosts. Biodegradability, workability into devices ...

  5. Ontology-Based Device Descriptions and Device Repository for Building Automation Devices

    Directory of Open Access Journals (Sweden)

    Dibowski Henrik

    2011-01-01

    Full Text Available Device descriptions play an important role in the design and commissioning of modern building automation systems and help reducing the design time and costs. However, all established device descriptions are specialized for certain purposes and suffer from several weaknesses. This hinders a further design automation, which is strongly needed for the more and more complex building automation systems. To overcome these problems, this paper presents novel Ontology-based Device Descriptions (ODDs along with a layered ontology architecture, a specific ontology view approach with virtual properties, a generic access interface, a triple store-based database backend, and a generic search mask GUI with underlying query generation algorithm. It enables a formal, unified, and extensible specification of building automation devices, ensures their comparability, and facilitates a computer-enabled retrieval, selection, and interoperability evaluation, which is essential for an automated design. The scalability of the approach to several ten thousand devices is demonstrated.

  6. Interface Recombination in Depleted Heterojunction Photovoltaics based on Colloidal Quantum Dots

    KAUST Repository

    Kemp, Kyle W.

    2013-03-26

    Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2 -PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Remarkably High Conversion Efficiency of Inverted Bulk Heterojunction Solar Cells: From Ultrafast Laser Spectroscopy and Electron Microscopy to Device Fabrication and Optimization

    KAUST Repository

    Alsulami, Qana

    2016-04-10

    In organic donor-acceptor systems, ultrafast interfacial charge transfer (CT), charge separation (CS), and charge recombination (CR) are key determinants of the overall performance of photovoltaic devices. However, a profound understanding of these photophysical processes at device interfaces remains superficial, creating a major bottleneck that circumvents advancements and the optimization of these solar cells. Here, results from time-resolved laser spectroscopy and high-resolution electron microscopy are examined to provide the fundamental information necessary to fabricate and optimize organic solar cell devices. In real time, CT and CS are monitored at the interface between three fullerene acceptors (FAs) (PC71BM, PC61BM, and IC60BA) and the PTB7-Th donor polymer. Femtosecond transient absorption (fs-TA) data demonstrates that photoinduced electron transfer from the PTB7-Th polymer to each FA occurs on the sub-picosecond time scale, leading to the formation of long-lived radical ions. It is also found that the power conversion efficiency improves from 2% in IC60BA-based solar cells to >9% in PC71BM-based devices, in support of our time-resolved results. The insights reported in this manuscript provide a clear understanding of the key variables involved at the device interface, paving the way for the exploitation of efficient CS and subsequently improving the photoconversion efficiency. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Terence K. S. Wong

    2016-04-01

    Full Text Available The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O, cupric oxide (CuO and copper (III oxide (Cu4O3 is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.

  9. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    Science.gov (United States)

    Wong, Terence K. S.; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K.

    2016-01-01

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%. PMID:28773398

  10. Sb-Based Double Heterojunction Bipolar Transistors (DHBTs) With Fmax 650GHz for 340GHz Transmitter

    Science.gov (United States)

    2008-12-01

    PROPER IDENTIFICATION . NOT TO BE USED FOR INTERIM PROGRESS REPORTS SEE PAGE 2 FOR INTERIM PROGRESS REPORT INSTRUCTIONS MEMORANDUM OF TRANSMITTAL...conduction band lineup . These advantages have led to rapid progress in increasing device bandwidths, allowing competitive RF performance with established

  11. A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

    KAUST Repository

    Flemban, Tahani H.; Haque, Mohammed; Ajia, Idris A.; Alwadai, Norah Mohammed Mosfer; Mitra, Somak; Wu, Tao; Roqan, Iman S.

    2017-01-01

    properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated

  12. Atomically precise graphene nanoribbon heterojunctions from a single molecular precursor

    Science.gov (United States)

    Nguyen, Giang D.; Tsai, Hsin-Zon; Omrani, Arash A.; Marangoni, Tomas; Wu, Meng; Rizzo, Daniel J.; Rodgers, Griffin F.; Cloke, Ryan R.; Durr, Rebecca A.; Sakai, Yuki; Liou, Franklin; Aikawa, Andrew S.; Chelikowsky, James R.; Louie, Steven G.; Fischer, Felix R.; Crommie, Michael F.

    2017-11-01

    The rational bottom-up synthesis of atomically defined graphene nanoribbon (GNR) heterojunctions represents an enabling technology for the design of nanoscale electronic devices. Synthetic strategies used thus far have relied on the random copolymerization of two electronically distinct molecular precursors to yield GNR heterojunctions. Here we report the fabrication and electronic characterization of atomically precise GNR heterojunctions prepared through late-stage functionalization of chevron GNRs obtained from a single precursor. Post-growth excitation of fully cyclized GNRs induces cleavage of sacrificial carbonyl groups, resulting in atomically well-defined heterojunctions within a single GNR. The GNR heterojunction structure was characterized using bond-resolved scanning tunnelling microscopy, which enables chemical bond imaging at T = 4.5 K. Scanning tunnelling spectroscopy reveals that band alignment across the heterojunction interface yields a type II heterojunction, in agreement with first-principles calculations. GNR heterojunction band realignment proceeds over a distance less than 1 nm, leading to extremely large effective fields.

  13. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei; He, Xin; Zhang, Xixiang; Alshareef, Husam N.

    2016-01-01

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10

  14. A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

    Science.gov (United States)

    Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

    2018-04-01

    p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.

  15. Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

    Science.gov (United States)

    Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

    2018-04-01

    In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor (TFET) for DRAM applications. The n-doped boosting layer and gate2 drain-underlap structure is employed in the device to obtain an excellent 1T-DRAM performance. The n-doped layer inserted between the source and channel regions improves the sensing margin because of a high rate of increase in the band-to-band tunneling (BTBT) probability. Furthermore, because the gate2 drain-underlap structure reduces the recombination rate that occurs between the gate2 and drain regions, a device with a gate2 drain-underlap length (L G2_D-underlap) of 10 nm exhibited a longer retention performance. As a result, by applying the n-doped layer and gate2 drain-underlap structure, the proposed device exhibited not only a high sensing margin of 1.11 µA/µm but also a long retention time of greater than 100 ms at a temperature of 358 K (85 °C).

  16. Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

    Science.gov (United States)

    Ling, Cuicui; Guo, Tianchao; Lu, Wenbo; Xiong, Ya; Zhu, Lei; Xue, Qingzhong

    2017-06-29

    The SnO 2 /Si heterojunction possesses a large band offset and it is easy to control the transportation of carriers in the SnO 2 /Si heterojunction to realize high-response broadband detection. Therefore, we investigated the potential of the SnO 2 nanoparticle thin film/SiO 2 /p-Si heterojunction for photodetectors. It is demonstrated that this heterojunction shows a stable, repeatable and broadband photoresponse from 365 nm to 980 nm. Meanwhile, the responsivity of the device approaches a high value in the range of 0.285-0.355 A W -1 with the outstanding detectivity of ∼2.66 × 10 12 cm H 1/2 W -1 and excellent sensitivity of ∼1.8 × 10 6 cm 2 W -1 , and its response and recovery times are extremely short (oxide or oxide/Si based photodetectors. In fact, the photosensitivity and detectivity of this heterojunction are an order of magnitude higher than that of 2D material based heterojunctions such as (Bi 2 Te 3 )/Si and MoS 2 /graphene (photosensitivity of 7.5 × 10 5 cm 2 W -1 and detectivity of ∼2.5 × 10 11 cm H 1/2 W -1 ). The excellent device performance is attributed to the large Fermi energy difference between the SnO 2 nanoparticle thin film and Si, SnO 2 nanostructure, oxygen vacancy defects and thin SiO 2 layer. Consequently, practical highly-responsive broadband PDs may be actualized in the future.

  17. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Winata, Toto

    2016-01-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  18. Progress of Terahertz Devices Based on Graphene

    Institute of Scientific and Technical Information of China (English)

    Mai-Xia Fu; Yan Zhang

    2013-01-01

    Graphene is a one-atom-thick planar sheet of sp2-hybridized orbital bonded honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to the unique carrier transport and optical properties, such as giant carrier mobility and broadband flat optical response. As a novel material, graphene has been regarded to be extremely suitable and competent for the development of terahertz (THz) optical devices. In this paper, the fundamental electronic and optic properties of graphene are described. Based on the energy band structure and light transmittance properties of graphene, many novel graphene based THz devices have been proposed, including modulator, generator, detector, and imaging device. This progress has been reviewed. Future research directions of the graphene devices for THz applications are also proposed.

  19. Graphene devices based on laser scribing technology

    Science.gov (United States)

    Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling

    2018-04-01

    Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.

  20. Electroluminescence from GaN-polymer heterojunction

    International Nuclear Information System (INIS)

    Chitara, Basant; Lal, Nidhi; Krupanidhi, S.B.; Rao, C.N.R.

    2011-01-01

    Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). - Highlights: → We use a polymer Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction. → I-V characteristics of the device fabricated by us exhibits excellent rectification. → The p-type polymer also emits yellow light, which when combined in proper composition with GaN, give rise to white light. → Device can be readily fabricated by just spin coating the polymer over GaN reducing the cost of the device.

  1. High speed heterostructure devices

    CERN Document Server

    Beer, Albert C; Willardson, R K; Kiehl, Richard A; Sollner, T C L Gerhard

    1994-01-01

    Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices.

  2. High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

    Science.gov (United States)

    Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

    2015-01-27

    An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Value-based purchasing of medical devices.

    Science.gov (United States)

    Obremskey, William T; Dail, Teresa; Jahangir, A Alex

    2012-04-01

    Health care in the United States is known for its continued innovation and production of new devices and techniques. While the intention of these devices is to improve the delivery and outcome of patient care, they do not always achieve this goal. As new technologies enter the market, hospitals and physicians must determine which of these new devices to incorporate into practice, and it is important these devices bring value to patient care. We provide a model of a physician-engaged process to decrease cost and increase review of physician preference items. We describe the challenges, implementation, and outcomes of cost reduction and product stabilization of a value-based process for purchasing medical devices at a major academic medical center. We implemented a physician-driven committee that standardized and utilized evidence-based, clinically sound, and financially responsible methods for introducing or consolidating new supplies, devices, and technology for patient care. This committee worked with institutional finance and administrative leaders to accomplish its goals. Utilizing this physician-driven committee, we provided access to new products, standardized some products, decreased costs of physician preference items 11% to 26% across service lines, and achieved savings of greater than $8 million per year. The implementation of a facility-based technology assessment committee that critically evaluates new technology can decrease hospital costs on implants and standardize some product lines.

  4. Charge transport across bulk heterojunction organic thin film

    Energy Technology Data Exchange (ETDEWEB)

    Tessema, Genene [University of Kwazulu-Natal, School of Physics, Scottsville (South Africa); Addis Ababa University, Department of Physics, Addis Ababa (Ethiopia)

    2012-01-15

    The transport of charges in organic photo-active film has been the focus of tremendous research in the past few decades with the view to understand the physics of the polymers. Bulk heterojunction type devices are particularly more interesting because of their high power conversion efficiency. We have fabricated organic PV cell based on sandwich type ITO/PEDOT:PSS/APFO green-6:PCBM/LiF/Al device structure. The space charge limited currents were investigated to be able to derive important transport parameters of the devices. The measured current agrees very well with trap free space charge limited transport theory. The zero field mobility and field activation factor found from the data were {mu} {sub 0}=(3.39{+-}0.2) x 10{sup -6} m{sup 2}/V sec and {gamma}=(8.3{+-}0.3) x 10{sup -4} (m/V){sup 1/2}, respectively. (orig.)

  5. a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.

    Science.gov (United States)

    Song, Weidong; Wang, Rupeng; Wang, Xingfu; Guo, Dexiao; Chen, Hang; Zhu, Yuntao; Liu, Liu; Zhou, Yu; Sun, Qian; Wang, Li; Li, Shuti

    2017-11-29

    Micro/nanowire-based devices have been envisioned as a promising new route toward improved electronic and optoelectronic applications, which attracts considerable research interests. However, suffering from applicable strategies to synthesize uniform core-shell structures to meet the requirement for the investigations of electrical transport behaviors along the length direction or high electron mobility transistor (HEMT) devices, heterojunction wire-based electronics have been explored limitedly. In the present work, GaN/AlN/AlGaN core-shell heterojunction microwires on patterned Si substrates were synthesized without any catalyst via metalorganic chemical vapor deposition. The as-synthesized microwires had low dislocation, sharp, and uniform heterojunction interfaces. Electrical transport performances were evaluated by fabricating HEMTs on the heterojunction microwire channels. Results demonstrated that a normally off operation was achieved with a threshold voltage of 1.4 V, a high on/off current ratio of 10 8 , a transconductance of 165 mS/mm, and a low subthreshold swing of 81 mV/dec. The normally off operation may attribute to the weak polarization along semipolar facets of the heterojunction, which leads to weak constrain of 2DEG.

  6. Hybrid Perovskite/Perovskite Heterojunction Solar Cells.

    Science.gov (United States)

    Hu, Yinghong; Schlipf, Johannes; Wussler, Michael; Petrus, Michiel L; Jaegermann, Wolfram; Bein, Thomas; Müller-Buschbaum, Peter; Docampo, Pablo

    2016-06-28

    Recently developed organic-inorganic hybrid perovskite solar cells combine low-cost fabrication and high power conversion efficiency. Advances in perovskite film optimization have led to an outstanding power conversion efficiency of more than 20%. Looking forward, shifting the focus toward new device architectures holds great potential to induce the next leap in device performance. Here, we demonstrate a perovskite/perovskite heterojunction solar cell. We developed a facile solution-based cation infiltration process to deposit layered perovskite (LPK) structures onto methylammonium lead iodide (MAPI) films. Grazing-incidence wide-angle X-ray scattering experiments were performed to gain insights into the crystallite orientation and the formation process of the perovskite bilayer. Our results show that the self-assembly of the LPK layer on top of an intact MAPI layer is accompanied by a reorganization of the perovskite interface. This leads to an enhancement of the open-circuit voltage and power conversion efficiency due to reduced recombination losses, as well as improved moisture stability in the resulting photovoltaic devices.

  7. Torsion based universal MEMS logic device

    KAUST Repository

    Ilyas, Saad; Carreno, Armando Arpys Arevalo; Bayes, Ernesto; Foulds, Ian G.; Younis, Mohammad I.

    2015-01-01

    In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

  8. Torsion based universal MEMS logic device

    KAUST Repository

    Ilyas, Saad

    2015-10-28

    In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

  9. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    OpenAIRE

    Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, and Liang-mo

    2015-01-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current volt...

  10. Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-12-01

    In this work, we attempt to reveal the underlying mechanisms of divergent V{sub TH}-thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent V{sub TH}, MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced V{sub TH} shift. The temperature-dependent V{sub TH} of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct V{sub G}-driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing V{sub TH}-thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices.

  11. Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

    International Nuclear Information System (INIS)

    Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J.

    2014-01-01

    In this work, we attempt to reveal the underlying mechanisms of divergent V TH -thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent V TH , MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced V TH shift. The temperature-dependent V TH of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct V G -driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing V TH -thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices

  12. Fast Response and High Sensitivity of ZnO Nanowires-Cobalt Phthalocyanine Heterojunction Based H2S Sensor.

    Science.gov (United States)

    Kumar, Ashwini; Samanta, Soumen; Singh, Ajay; Roy, Mainak; Singh, Surendra; Basu, Saibal; Chehimi, Mohmad M; Roy, Kallol; Ramgir, Niranjan; Navaneethan, M; Hayakawa, Y; Debnath, Anil K; Aswal, Dinesh K; Gupta, Shiv K

    2015-08-19

    The room temperature chemiresistive response of n-type ZnO nanowire (ZnO NWs) films modified with different thicknesses of p-type cobalt phthalocyanine (CoPc) has been studied. With increasing thickness of CoPc (>15 nm), heterojunction films exhibit a transition from n- to p-type conduction due to uniform coating of CoPc on ZnO. The heterojunction films prepared with a 25 nm thick CoPc layer exhibit the highest response (268% at 10 ppm of H2S) and the fastest response (26 s) among all samples. The X-ray photoelectron spectroscopy and work function measurements reveal that electron transfer takes place from ZnO to CoPc, resulting in formation of a p-n junction with a barrier height of 0.4 eV and a depletion layer width of ∼8.9 nm. The detailed XPS analysis suggests that these heterojunction films with 25 nm thick CoPc exhibit the least content of chemisorbed oxygen, enabling the direct interaction of H2S with the CoPc molecule, and therefore exhibit the fastest response. The improved response is attributed to the high susceptibility of the p-n junctions to the H2S gas, which manipulates the depletion layer width and controls the charge transport.

  13. ZnO nanoneedle/H2O solid-liquid heterojunction-based self-powered ultraviolet detector

    Science.gov (United States)

    2013-01-01

    ZnO nanoneedle arrays were grown vertically on a fluorine-doped tin oxide-coated glass by hydrothermal method at a relatively low temperature. A self-powered photoelectrochemical cell-type UV detector was fabricated using the ZnO nanoneedles as the active photoanode and H2O as the electrolyte. This solid-liquid heterojunction offers an enlarged ZnO/water contact area and a direct pathway for electron transport simultaneously. By connecting this UV photodetector to an ammeter, the intensity of UV light can be quantified using the output short-circuit photocurrent without a power source. High photosensitivity, excellent spectral selectivity, and fast photoresponse at zero bias are observed in this UV detector. The self-powered behavior can be well explained by the formation of a space charge layer near the interface of the solid-liquid heterojunction, which results in a built-in potential and makes the solid-liquid heterojunction work in photovoltaic mode. PMID:24103153

  14. Morphology control for highly efficient organic–inorganic bulk heterojunction solar cell based on Ti-alkoxide

    International Nuclear Information System (INIS)

    Kato, Takehito; Hagiwara, Naoki; Suzuki, Eiji; Nasu, Yuki; Izawa, Satoru; Tanaka, Kouichi; Kato, Ariyuki

    2016-01-01

    The number of publications concerned with typical bulk-heterojunction solar cells that use fullerene derivatives and inorganic materials as electron acceptors has grown very rapidly. In this work, we focus on Ti-alkoxides as electron acceptors in the photoactive layers of fullerene-free bulk-heterojunction solar cells. We show that it is possible to control the morphology by adjusting the molecular structure and size of the Ti-alkoxides. The short-circuit current density (J_s_c) increased to 191 μA/cm"2 from 25 μA/cm"2 with a maximum, when the phase-separation structure was continuously formed to within about 20 nm below the exciton diffusion length by using either titanium(IV) ethoxide or isopropoxide as an electron acceptor. Within a thickness of 30 nm, the photoactive layer is not influenced by the electron transfer ability; thus, we demonstrate that the charge-separation efficiency is equivalent to that of a fullerene system. - Highlights: • An organic–inorganic bulk-heterojunction photoactive layer was used. • Electron donor was a semiconducting polymer and electron acceptor was Ti-alkoxide. • Demonstration of morphology control by Ti-alkoxide molecules. • Determination of Jsc value by the phase-separation structure in an ultra-thin film. • Charge-separation efficiency of Ti-alkoxide system equivalent to fullerene system.

  15. Growth dynamics of SiGe nanowires by the Vapour Liquid Solid method and its impact on SiGe/Si axial heterojunction abruptness.

    Science.gov (United States)

    Pura, Jose Luis; Periwal, Priyanka; Baron, Thierry; Jimenez, Juan

    2018-06-05

    The Vapour Liquid Solid (VLS) method is by far the most extended procedure for bottom-up nanowire growth. This method also allows for the manufacture of nanowire axial heterojunctions in a straightforward way. To do this, during the growth process the precursor gases are switched on/off to obtain the desired change in the nanowire composition. Using this technique axially heterostructured nanowires can be grown, which are crucial for the fabrication of electronic and optoelectronic devices. SiGe/Si nanowires are compatible with Complementary Metal Oxide Semiconductor (CMOS) technology, this improves their versatility and the possibility of integration with the current electronic technologies. Abrupt heterointerfaces are fundamental for the development and correct operation of electronic and optoelectronic devices. Unfortunately, VLS growth of SiGe/Si heterojunctions does not provide abrupt transitions because of the high solubility of group IV semiconductors in Au, with the corresponding reservoir effect that precludes the growth of sharp interfaces. In this work, we studied the growth dynamics of SiGe/Si heterojunctions based on already developed models for VLS growth. A composition map of the Si-Ge-Au liquid alloy is proposed to better understand the impact of the growing conditions on the nanowire growth process and the heterojunction formation. The solution of our model provides heterojunction profiles in good agreement with experimental measurements. Finally, the in-depth study of the composition map provides a practical approach to reduce drastically the heterojunction abruptness by reducing the Si and Ge concentrations in the catalyst droplet. This converges with previous approaches that use catalysts aiming to reduce the solubility of the atomic species. This analysis opens new paths to reduce the heterojunction abruptness using Au catalysts, but the model can be naturally extended to other catalysts and semiconductors. © 2018 IOP Publishing Ltd.

  16. Wide bandgap collector III-V double heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Flitcroft, R.M.

    2000-10-01

    This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

  17. Conjugated polymer photovoltaic devices and materials

    International Nuclear Information System (INIS)

    Mozer, A.J.; Niyazi, Serdar Sariciftci

    2006-01-01

    The science and technology of conjugated polymer-based photovoltaic devices (bulk heterojunction solar cells) is highlighted focusing on three major issues, i.e. (i) nano-morphology optimization, (ii) improving charge carrier mobility, (iii) improving spectral sensitivity. Successful strategies towards improved photovoltaic performance are presented using various novel materials, including double-cable polymers, regioregular polymers and low bandgap polymers. The examples presented herein demonstrate that the bulk heterojunction concept is a viable approach towards developing photovoltaic systems by inexpensive solution-based fabrication technologies. (authors)

  18. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  19. Perovskite-based solar cells with inorganic inverted hybrid planar heterojunction structure

    Directory of Open Access Journals (Sweden)

    Wei-Chih Lai

    2018-01-01

    Full Text Available We demonstrated the good performance of inorganic inverted CH3NH3PbI3 perovskite-based solar cells (SCs with glass/ITO/NiOx/CH3NH3PbI3 perovskite/C60/ room temperature (RT-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiOx and ZnO, respectively. The inorganic hole and electron transport layer of NiOx and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (VOC, short-circuit current density (JSC, and power conversion efficiency (η% of the SCs. We obtained inorganic inverted CH3NH3PbI3 perovskite-based SCs with a JSC of 21.96 A/cm2, a VOC of 1.02 V, a fill factor (FF% of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O2. The inorganic inverted CH3NH3PbI3 perovskite-based SCs demonstrated improved storage reliability.

  20. Perovskite-based solar cells with inorganic inverted hybrid planar heterojunction structure

    Science.gov (United States)

    Lai, Wei-Chih; Lin, Kun-Wei; Guo, Tzung-Fang; Chen, Peter; Liao, Yuan-Yu

    2018-01-01

    We demonstrated the good performance of inorganic inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with glass/ITO/NiOx/CH3NH3PbI3 perovskite/C60/ room temperature (RT)-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiOx and ZnO, respectively. The inorganic hole and electron transport layer of NiOx and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (VOC), short-circuit current density (JSC), and power conversion efficiency (η%) of the SCs. We obtained inorganic inverted CH3NH3PbI3 perovskite-based SCs with a JSC of 21.96 A/cm2, a VOC of 1.02 V, a fill factor (FF%) of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O2. The inorganic inverted CH3NH3PbI3 perovskite-based SCs demonstrated improved storage reliability.

  1. Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions.

    Science.gov (United States)

    Henning, Alex; Sangwan, Vinod K; Bergeron, Hadallia; Balla, Itamar; Sun, Zhiyuan; Hersam, Mark C; Lauhon, Lincoln J

    2018-05-16

    Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form nonplanar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Toward that end, we investigated the photoresponse of Si nanowire/MoS 2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS 2 isotype heterojunctions with p-Si/MoS 2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument-limited response time of 1 μs, which is 10 times faster than the previously reported response times for planar Si/MoS 2 devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors.

  2. Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions

    KAUST Repository

    Chiu, Ming-Hui

    2016-09-20

    It is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls the electronic and optical properties. However, the well-known Anderson\\'s model usually fails to predict the band alignment in bulk HJ systems due to the presence of charge transfer at the interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since the ultrathin HJs and devices can be easily built and they are promising for future electronics. The vertical HJs based on 2D materials can be constructed via van der Waals stacking regardless of the lattice mismatch between two materials. Despite the defect-free characteristics of the junction interface, experimental evidence is still lacking on whether the simple Anderson rule can predict the band alignment of HJs. Here, the validity of Anderson\\'s model is verified for the 2D heterojunction systems and the success of Anderson\\'s model is attributed to the absence of dangling bonds (i.e., interface dipoles) at the van der Waal interface. The results from the work set a foundation allowing the use of powerful Anderson\\'s rule to determine the band alignments of 2D HJs, which is beneficial to future electronic, photonic, and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Lanyi; Ying, Jun; Han, Jinhua; Zhang, Letian, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn; Wang, Wei, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2016-04-25

    In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electrons transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.

  4. Cellphone-based devices for bioanalytical sciences

    Science.gov (United States)

    Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E.Marion; Zengerle, Roland; Ozcan, Aydogan

    2014-01-01

    During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This manuscript aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities. PMID:24287630

  5. UV-sensitive optical sensors based on ITO-gallium phosphide heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Malik, Oleksandr; Hidalga-Wade, F. Javier de la; Zuniga-Islas, Carlos; Abundis Patino, Jesus H. [National Institute for Astrophysics, Optics, and Electronics (INAOE), Puebla (Mexico)

    2010-04-15

    Design and characteristics of wide-band UV sensors based on ITO/GaP heterostructures are discussed. Such sensors have perfect electrical parameters and high UV-visible sensitivity in comparison with surface-barrier structures using a semi-transparent thin metal film as an electrode. Many applications require UV sensors with an effective rejection of visible radiation and a wide temperature operating interval. For this aim, the theoretical modelling of extreme selective optical sensors with a double Ag/ITO thin film on the GaP surface, in which the thin silver film serves as a narrow bandpass filter at 320 nm, has been conducted. With this modelling the optimal thickness combination for the silver and ITO films was found for the maximum rejection of the sensitivity to visible radiation (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Performance improvement in novel germanium-tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor

    Science.gov (United States)

    Wang, Hongjuan; Liu, Yan; Liu, Mingshan; Zhang, Qingfang; Zhang, Chunfu; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue; Han, Genquan

    2015-07-01

    We design a novel GeSn-based heterojunction-enhanced p-channel tunneling field-effect transistor (HE-PTFET) with a Ge0.92Sn0.08/Ge heterojunction located in channel region, at a distance of LT-H from the Ge0.92Sn0.08 source-channel tunneling junction (TJ). HE-PTFETs demonstrate the negative shift of onset voltage VONSET, the steeper subthreshold swing S, and the improved on-state current ION compared to Ge0.92Sn0.08 homo-PTFET. At low VGS, the suppression of BTBT due to the widening of the tunneling barrier caused by the heterojunction leads to a negative shift of VONSET in HE-PTFETs. At high VGS, ION enhancement in HE-PTFETs is achieved over the homo device, which is attributed to the confinement of BTBT in Ge0.92Sn0.08 source-channel TJ region by the heterojunction, where the short tunneling paths lead to a high tunneling probability. Due to the steeper average S, HE-PTFET with a 6 nm LT-H achieves a 4 times higher ION compared to homo device at a VDD of -0.3 V.

  7. Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

    Science.gov (United States)

    Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

    2011-12-07

    Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

  8. Carbon Based Transistors and Nanoelectronic Devices

    Science.gov (United States)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  9. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    Science.gov (United States)

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-10-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  10. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding

    2017-10-16

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  11. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Counterbalancing of morphology and conductivity of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate based flexible devices.

    Science.gov (United States)

    Jang, Woongsik; Ahn, Sunyong; Park, Soyun; Park, Jong Hyeok; Wang, Dong Hwan

    2016-12-01

    The importance of conductive polymer electrodes with a balance between the morphology and electrical conductivity for flexible organic photovoltaic properties has been demonstrated. Highly transparent PEDOT:PSS anodes with controlled conductivity and surface properties were realized by insertion of dimethyl sulfoxide (DMSO) and a fluorosurfactant (Zonyl) as efficient additives and used for flexible organic photovoltaic cells (OPVs) which are based on a bulk-heterojunction of polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7):[6,6]phenyl-C 71 -butyric acid methyl ester (PC 71 BM). We investigated the correlation between the electrical properties of PEDOT:PSS electrodes and their influences on the surface morphology of the active materials (PTB7:PC 71 BM). When the device was prepared from the PEDOT:PSS layer functioning as an anode of OPV through an optimized ratio of 5 vol% of DMSO and 0.1 wt% of fluorosurfactant, the devices exhibited improved fill factor (FF) due to the enhanced coverage of PEDOT:PSS films. These results correlate with reduced photoluminescence and increased charge extraction as seen through Raman spectroscopy and electrical analysis, respectively. The conductive polymer electrode with the balance between the morphology and electrical conductivity can be a useful replacement for brittle electrodes such as those made of indium tin oxide (ITO) as they are more resistant to cracking and bending conditions, which will contribute to the long-term operation of flexible devices.

  13. Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

    Science.gov (United States)

    Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

    2014-04-24

    A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Carbon Nanotube Paper-Based Electroanalytical Devices

    Directory of Open Access Journals (Sweden)

    Youngmi Koo

    2016-04-01

    Full Text Available Here, we report on carbon nanotube paper-based electroanalytical devices. A highly aligned-carbon nanotube (HA-CNT array, grown using chemical vapor deposition (CVD, was processed to form bi-layered paper with an integrated cellulose-based Origami-chip as the electroanalytical device. We used an inverse-ordered fabrication method from a thick carbon nanotube (CNT sheet to a thin CNT sheet. A 200-layered HA-CNT sheet and a 100-layered HA-CNT sheet are explored as a working electrode. The device was fabricated using the following methods: (1 cellulose-based paper was patterned using a wax printer, (2 electrical connection was made using a silver ink-based circuit printer, and (3 three electrodes were stacked on a 2D Origami cell. Electrochemical behavior was evaluated using electrochemical impedance spectroscopy (EIS and cyclic voltammetry (CV. We believe that this platform could attract a great deal of interest for use in various chemical and biomedical applications.

  15. p-PEDOT:PSS as a heterojunction partner with n-ZnO for detection of LPG at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ladhe, R.D. [Thin Film and Nano Science Laboratory, Department of Physics, School of Physical Sciences, North Maharashtra University, Jalgaon 425 001 (M.S.) (India); Gurav, K.V. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Pawar, S.M. [Solar Cell Laboratory, LG Components R and D Center, 1271, Sa-Dong, Sanggrok-gu, Ansan-si, Gyeonggi-do 426-791 (Korea, Republic of); Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Sankapal, B.R., E-mail: brsankapal@rediffmail.com [Thin Film and Nano Science Laboratory, Department of Physics, School of Physical Sciences, North Maharashtra University, Jalgaon 425 001 (M.S.) (India)

    2012-02-25

    Highlights: Black-Right-Pointing-Pointer Formation of heterojunction n-ZnO and p-PEDOT:PSS at room temperature (27 Degree-Sign C). Black-Right-Pointing-Pointer Use of this heterojunction as room temperature LPG sensor. Black-Right-Pointing-Pointer Remarkable gas response with good stability of the sensing device. Black-Right-Pointing-Pointer Use of heterojunction could offer cost-effective LPG sensor that is ecological-friendly. Black-Right-Pointing-Pointer The mass production using scalable room temperature chemical deposition process. - Abstract: Investigation towards the performance of room temperature (27 Degree-Sign C) liquefied petroleum gas (LPG) sensor based on the heterojunction between p-PEDOT:PSS and n-type ZnO is reported. The junction was developed by using chemically deposited ZnO film on to fluorine doped tin oxide (FTO) coated glass substrate followed by coating of thin slurry layer of PEDOT:PSS by using spin coating technique. Both these methods are simple, inexpensive and suitable for large area applications. Different characterization techniques were used to characterize structural, surface morphological and compositional of the material deposited. LPG sensing behavior of the heterojunction was studied at room temperature along with the stability studies. At room temperature, the heterojunction showed 58.8% sensitivity upon exposure to 1000 ppm of LPG with good response and recovery time like 225 s and 190 s, respectively. Furthermore, the LPG sensor reported is cost-effective, user friendly, and easy to fabricate using low cost chemical methods at room temperature.

  16. Fiber Bragg grating based arterial localization device

    Science.gov (United States)

    Ho, Siu Chun Michael; Li, Weijie; Razavi, Mehdi; Song, Gangbing

    2017-06-01

    A critical first step to many surgical procedures is locating and gaining access to a patients vascular system. Vascular access allows the deployment of other surgical instruments and also the monitoring of many physiological parameters. Current methods to locate blood vessels are predominantly based on the landmark technique coupled with ultrasound, fluoroscopy, or Doppler. However, even with experience and technological assistance, locating the required blood vessel is not always an easy task, especially with patients that present atypical anatomy or suffer from conditions such as weak pulsation or obesity that make vascular localization difficult. With recent advances in fiber optic sensors, there is an opportunity to develop a new tool that can make vascular localization safer and easier. In this work, the authors present a new fiber Bragg grating (FBG) based vascular access device that specializes in arterial localization. The device estimates the location towards a local artery based on the bending of a needle inserted near the tissue surrounding the artery. Experimental results obtained from an artificial circulatory loop and a mock artery show the device works best for lower angles of needle insertion and can provide an approximately 40° range of estimation towards the location of a pulsating source (e.g. an artery).

  17. Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

    Science.gov (United States)

    Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

    2016-11-10

    We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

  18. ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

    International Nuclear Information System (INIS)

    Berruet, M.; Di Iorio, Y.; Troviano, M.; Vázquez, M.

    2014-01-01

    Solution-based techniques were used to prepare ZnO/CuIn(Se, S) 2 heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe 2 (CISe) and CuInSe 2−x S x (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO 2 into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe 2 or CuInSe 0.4 S 1.6 . • A TiO 2 buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction

  19. ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

    Energy Technology Data Exchange (ETDEWEB)

    Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

    2014-12-15

    Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

  20. Solution-Processed In2O3/ZnO Heterojunction Electron Transport Layers for Efficient Organic Bulk Heterojunction and Inorganic Colloidal Quantum-Dot Solar Cells

    KAUST Repository

    Eisner, Flurin

    2018-04-25

    We report the development of a solution‐processed In2O3/ZnO heterojunction electron transport layer (ETL) and its application in high efficiency organic bulk‐heterojunction (BHJ) and inorganic colloidal quantum dot (CQD) solar cells. Study of the electrical properties of this low‐dimensional oxide heterostructure via field‐effect measurements reveals that electron transport along the heterointerface is enhanced by more than a tenfold when compared to the individual single‐layer oxides. Use of the heterojunction as the ETL in organic BHJ photovoltaics is found to consistently improve the cell\\'s performance due to the smoothening of the ZnO surface, increased electron mobility and a noticeable reduction in the cathode\\'s work function, leading to a decrease in the cells’ series resistance and a higher fill factor (FF). Specifically, non‐fullerene based organic BHJ solar cells based on In2O3/ZnO ETLs exhibit very high power conversion efficiencies (PCE) of up to 12.8%, and high FFs of over 70%. The bilayer ETL concept is further extended to inorganic lead‐sulphide CQD solar cells. Resulting devices exhibit excellent performance with a maximum PCE of 8.2% and a FF of 56.8%. The present results highlight the potential of multilayer oxides as novel ETL systems and lay the foundation for future developments.

  1. Solution-Processed In2O3/ZnO Heterojunction Electron Transport Layers for Efficient Organic Bulk Heterojunction and Inorganic Colloidal Quantum-Dot Solar Cells

    KAUST Repository

    Eisner, Flurin; Seitkhan, Akmaral; Han, Yang; Khim, Dongyoon; Yengel, Emre; Kirmani, Ahmad R.; Xu, Jixian; Garcí a de Arquer, F. Pelayo; Sargent, Edward H.; Amassian, Aram; Fei, Zhuping; Heeney, Martin; Anthopoulos, Thomas D.

    2018-01-01

    We report the development of a solution‐processed In2O3/ZnO heterojunction electron transport layer (ETL) and its application in high efficiency organic bulk‐heterojunction (BHJ) and inorganic colloidal quantum dot (CQD) solar cells. Study of the electrical properties of this low‐dimensional oxide heterostructure via field‐effect measurements reveals that electron transport along the heterointerface is enhanced by more than a tenfold when compared to the individual single‐layer oxides. Use of the heterojunction as the ETL in organic BHJ photovoltaics is found to consistently improve the cell's performance due to the smoothening of the ZnO surface, increased electron mobility and a noticeable reduction in the cathode's work function, leading to a decrease in the cells’ series resistance and a higher fill factor (FF). Specifically, non‐fullerene based organic BHJ solar cells based on In2O3/ZnO ETLs exhibit very high power conversion efficiencies (PCE) of up to 12.8%, and high FFs of over 70%. The bilayer ETL concept is further extended to inorganic lead‐sulphide CQD solar cells. Resulting devices exhibit excellent performance with a maximum PCE of 8.2% and a FF of 56.8%. The present results highlight the potential of multilayer oxides as novel ETL systems and lay the foundation for future developments.

  2. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  3. Topological Material-Based Spin Devices

    Science.gov (United States)

    Zhang, Minhao; Wang, Xuefeng

    Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.

  4. In situ codoping of a CuO absorber layer with aluminum and titanium: the impact of codoping and interface engineering on the performance of a CuO-based heterojunction solar cell

    Science.gov (United States)

    Masudy-Panah, Saeid; Radhakrishnan, K.; Ru, Tan Hui; Yi, Ren; Wong, Ten It; Dalapati, Goutam Kumar

    2016-09-01

    Aluminum-doped cupric oxide (CuO:Al) was prepared via an out-diffusion process of Al from an Al-coated substrate into the deposited CuO thin film upon thermal treatment. The effect of the annealing temperature on the structural and optical properties of CuO:Al was investigated in detail. The influence of Al incorporation on the photovoltaic properties was then investigated by preparing a p-CuO:Al/n-Si heterojunction solar cell. A significant improvement in the performance of the solar cell was achieved by controlling the out-diffusion of Al. A novel in situ method to co-dope CuO with Al and titanium (Ti) has been proposed to demonstrate CuO-based solar cells with the front surface field (FSF) design. The FSF design was created by depositing a CuO:Al layer followed by a Ti-doped CuO (CuO:Ti) layer. This is the first successful experimental demonstration of the codoping of a CuO thin film and CuO thin film solar cells with the FSF design. The open circuit voltage (V oc), short circuit current density (J sc) and fill factor (FF) of the fabricated solar cells were significantly higher for the FSF device compared to devices without FSF. The FF of this device improved by 68% through the FSF design and a record efficiency ɳ of 2% was achieved. The improvement of the solar cell properties is mainly attributed to the reduction of surface recombination, which influences the charge carrier collection.

  5. Photoanodic Hybrid Semiconductor–Molecular Heterojunction for Solar Water Oxidation

    KAUST Repository

    Joya, Khurram Saleem

    2015-06-29

    Inorganic photo-responsive semiconducting materials have been employed in photoelectrochemical(PEC) water oxidation devicesin pursuit of solar to fuel conversion.[1]The reaction kinetics in semiconductors is limited by poor contact at the interfaces, and charge transfer is impeded by surface defects and the grain boundaries.[2]It has shown that successful surface functionalization of the photo-responsive semiconducting materials with co-catalysts can maximize the charge separation, hole delivery and its effective consumption, and enhances the efficiency and performane of the PEC based water oxidation assembly.[3]We present here unique modification of photoanodic hematite (α-Fe2O3) and bismuth vanadate (BiVO4) with molecular co-catalysts for enhanced photoelectrochemical water oxidation (Figure 1). These hybrid inorganic–organometallic heterojunctions manifest impressive cathodic shifts in the onset potentials, and the photocurrent densities have been enhanced by > 90% at all potentials relative to uncatalyzed α-Fe2O3 or BiVO4, and other catalyst-semiconductor based heterojunctions.This is a novel development in the solar to fuel conversion field, and is crucially important for designing a tandem device where light interfere very little with the catalyst layer on top of semiconducting light absorber.

  6. Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Long, Hao; Ai, Lei [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Li, Songzhan [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei 430073 (China); Huang, Huihui; Mo, Xiaoming; Wang, Haoning; Chen, Zhao; Liu, Yuping [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Fang, Guojia, E-mail: gjfang@whu.edu.cn [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China)

    2014-05-01

    Highlights: • A p-NiO film/n-ZnO nanorod array heterojunction was prepared. • The heterojunction shows good morphology and crystal properties. • The diode exhibits excellent rectifying behavior. • The diode exhibits strong temperature dependent I–V properties. • The hybrid diode shows good photosensitivity under the ultraviolet irradiation. - Abstract: A p-NiO film/n-ZnO nanorod (NR) array heterojunction was prepared by deposition of NiO film on ZnO NRs using radio-frequency reactive magnetron sputtering. The well-aligned ZnO NRs were fabricated by a simple and economic hydrothermal method on a ZnO:Al-coated glass substrate. Good morphology and crystal properties of the fabricated ZnO NRs and NiO film were confirmed by scanning electron microscopy and X-ray diffraction. The p–n heterojunction exhibits excellent rectifying behaviour and strong temperature-dependent current–voltage properties in the range from −50 to 80 °C. The hybrid NR heterojunction diode shows good photosensitivity under the irradiation of 365 nm ultraviolet light. These results present potential applications in future microelectronic devices based on NiO films and the one-dimensional ZnO nanomaterials.

  7. Influence of thermal annealing-induced molecular aggregation on film properties and photovoltaic performance of bulk heterojunction solar cells based on a squaraine dye

    Science.gov (United States)

    Zhang, Pengpeng; Ling, Zhitian; Chen, Guo; Wei, Bin

    2018-04-01

    Squaraine (SQ) dyes have been considered as efficient photoactive materials for organic solar cells. In this work, we purposely controlled the molecular aggregation of an SQ dye, 2,4-bis[4-(N,N-dibutylamino)-2-dihydroxyphenyl] SQ (DBSQ-(OH)2) in the DBSQ(OH)2:[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend film by using the thermal annealing method, to study the influence of the molecular aggregation on film properties as well as the photovoltaic performance of DBSQ(OH)2:PCBM-based bulk heterojunction (BHJ) solar cells. Our results demonstrate that thermal annealing may change the aggregation behavior of DBSQ(OH)2 in the DBSQ(OH)2:PCBM film, and thus significantly influence the surface morphology, optical and electrical properties of the blend film, as well as the photovoltaic performance of DBSQ(OH)2:PCBM BHJ cells.

  8. Glow discharge based device for solving mazes

    Energy Technology Data Exchange (ETDEWEB)

    Dubinov, Alexander E., E-mail: dubinov-ae@yandex.ru; Mironenko, Maxim S.; Selemir, Victor D. [Russian Federal Nuclear Center − All-Russian Scientific and Research Institute of Experimental Physics (RFNC-VNIIEF), Sarov, Nizhni Novgorod region 607188 (Russian Federation); Sarov Institute of Physics and Technology (SarFTI) of National Research Nuclear University “MEPhI,” Sarov, Nizhni Novgorod region 607188 (Russian Federation); Maksimov, Artem N.; Pylayev, Nikolay A. [Russian Federal Nuclear Center − All-Russian Scientific and Research Institute of Experimental Physics (RFNC-VNIIEF), Sarov, Nizhni Novgorod region 607188 (Russian Federation)

    2014-09-15

    A glow discharge based device for solving mazes has been designed and tested. The device consists of a gas discharge chamber and maze-transformer of radial-azimuth type. It allows changing of the maze pattern in a short period of time (within several minutes). The device has been tested with low pressure air. Once switched on, a glow discharge has been shown to find the shortest way through the maze from the very first attempt, even if there is a section with potential barrier for electrons on the way. It has been found that ionization waves (striations) can be excited in the maze along the length of the plasma channel. The dependancy of discharge voltage on the length of the optimal path through the maze has been measured. A reduction in discharge voltage with one or two potential barriers present has been found and explained. The dependency of the magnitude of discharge ignition voltage on the length of the optimal path through the maze has been measured. The reduction of the ignition voltage with the presence of one or two potential barriers has been observed and explained.

  9. Study of Cu2O\\ZnO nanowires heterojunction designed by combining electrodeposition and atomic layer deposition

    Science.gov (United States)

    Makhlouf, Houssin; Weber, Matthieu; Messaoudi, Olfa; Tingry, Sophie; Moret, Matthieu; Briot, Olivier; Chtoutou, Radhouane; Bechelany, Mikhael

    2017-12-01

    Cu2O/ZnO nanowires (NWs) heterojunctions were successfully prepared by combining Atomic layer Deposition (ALD) and Electrochemical Deposition (ECD) processes. The crystallinity, morphology and photoconductivity properties of the Cu2O/ZnO nanostructures have been investigated. The properties of the Cu2O absorber layer and the nanostructured heterojunction were studied in order to understand the mechanisms lying behind the low photoconductivity measured. It has been found that the interface state defects and the high resistivity of Cu2O film were limiting the photovoltaic properties of the prepared devices. The understanding presented in this work is expected to enable the optimization of solar cell devices based on Cu2O/ZnO nanomaterials and improve their overall performance.

  10. Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure.

    Science.gov (United States)

    Li, H K; Chen, T P; Hu, S G; Li, X D; Liu, Y; Lee, P S; Wang, X P; Li, H Y; Lo, G Q

    2015-10-19

    Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.

  11. Development of Smartphone based Optical Device

    Science.gov (United States)

    Jung, Youngkee

    Due to the economy of scale, smartphones are becoming more affordable while their computing powers are increasing dramatically every year. Here we propose a ubiquitous and portable instrument for analyte quantitation by utilizing the characteristics of typical smartphone imaging system and specific design of transducers for different applications. Three testbeds included in this work are: quantitative colorimetric analysis, ultra-low radiant flux detection, and portable spectrometer. As a proof-of-principle for each device, 3-D printed cradle and theoretical simulation with MATLAB have been implemented. First example utilizes the native CMOS camera with their respective RGB channel data and perform an analyte quantitation for typical lateral flow devices (LFD). Histogram analysis method has been employed to detect the analyte concentration and calibration results show good correlation between perceived color change and analyte concentration. The second example shows the possibility of using a conventional CMOS camera for pico Watt level photon flux detection. Since most of consumer grade CMOS cameras cannot detect this level of light intensity and their dark current are relatively higher, a new algorithm called NREA (Noise Reduction by Ensemble Averaging) algorithm was developed to effectively reduce the noise level and increase the SNR (signal to noise ratio). This technique is effective for bioanalytical assays that has lower flux intensity such as fluorescence and luminescence. As a proof-of-principle, we tested the device with Pseudomonas fluorescens M3A and achieved a limit of detection of high 10? CFU/ml. In addition to basic schematic of detection model, another experiment with a silicon photomultiplier (SiPM) has been studied for more sensitive light detectability. Based on both the laser experiment and tw bioluminescent experiments, named Pseudomonas fluorescens M3A and NanoLuc, we found that the miniSM based device has a superior ability than the

  12. Study of interfaces in organic semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Maheshwari, P; Dutta, D; Sudarshan, K; Sharma, S K; Pujari, P K; Samanta, S; Singh, A; Aswal, D K

    2011-01-01

    The defect structure at the organic heterojunctions is studied using slow positron beam. The structural and electronic properties of heterojunctions are of technological and fundamental importance for understanding and optimization of electronic processes in organic devices. Interface trap centres play a significant role in the electrical conduction through the junctions. Depth dependent Doppler broadened annihilation measurements have been carried out in p- and n-type organic semiconductor thin films (30-80 nm) both single as well as multilayers grown on quartz substrate. The objective of the present study is to investigate the defect structure and to understand the behavior of positrons at the charged organic interfaces. Our result shows the sensitivity of positrons to the interfacial disorders that may be a convoluted effect of the presence of defects as well as the influence of the charge dipole in multilayers.

  13. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  14. Remarkably High Conversion Efficiency of Inverted Bulk Heterojunction Solar Cells: From Ultrafast Laser Spectroscopy and Electron Microscopy to Device Fabrication and Optimization

    KAUST Repository

    Alsulami, Qana; Banavoth, Murali; Alsinan, Yara; Parida, Manas R.; Aly, Shawkat Mohammede; Mohammed, Omar F.

    2016-01-01

    of these photophysical processes at device interfaces remains superficial, creating a major bottleneck that circumvents advancements and the optimization of these solar cells. Here, results from time-resolved laser spectroscopy and high-resolution electron microscopy

  15. Multiparametric electronic devices based on nuclear tracks

    Energy Technology Data Exchange (ETDEWEB)

    Fink, D. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany)], E-mail: FINK@HMI.DE; Saad, A. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); Basic Science Department, Faculty of Science, Al Balqa University, Salt (Jordan); Dhamodaran, S. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); School of Physics, University of Hyderabad, Hyderabad 500 046 (India); Chandra, A. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Fahrner, W.R. [Chair of Electronic Devices, Institute of Electrotechnique, Fernuniversitaet, Hagen (Germany); Hoppe, K. [South Westfalia University of Applied Sciences, Hagen (Germany); Chadderton, L.T. [Institute of Advanced Studies, ANU Canberra, GPO Box 4, ACT (Australia)

    2008-08-15

    An overview is given on a family of novel electronic devices consisting of an insulating layer containing conducting or semiconducting nuclear tracks, deposited on a semiconducting substrate, and connected by at least one back and two surface contacts. Conducting and semiconducting latent tracks may emerge directly from swift heavy ion irradiation. Etched tracks in insulators can be filled with adequate materials to make them conducting or semiconducting. For this purpose metallic or semiconducting nanoclusters were deposited. We have denoted termed these devices made with latent tracks as 'tunable electronic anisotropic material on semiconductor' (TEAMS), if based on latent ion tracks, and as 'tunable electronic material in pores in oxide on semiconductor' (TEMPOS), if based on etched tracks. Depending on the band-to-band transition between tracks and substrate and on the ratio of surface to track conductivity, the current/voltage characteristics of TEAMS and TEMPOS structures can be modified in many different ways leading to tunable resistors, capacitors and diodes. Both devices show negative differential resistances. This should enable tunable tunneldiodes. TEAMS or TEMPOS structures can be controlled by various external physical and/or chemical parameters leading to sensors. It is even possible to combine different input currents and/or external parameters according to AND/OR logics. The currents through a clustered layer on a TEMPOS structure can be described by the Barbasi-Albert model of network theory enabling to calculate a 'radius of influence'r{sub ROI} around each surface contact, beyond which neighboring contacts do not influence each other. The radius of influence can be well below 1{mu}m leading to nanometric TEMPOS structures.

  16. Multiparametric electronic devices based on nuclear tracks

    International Nuclear Information System (INIS)

    Fink, D.; Saad, A.; Dhamodaran, S.; Chandra, A.; Fahrner, W.R.; Hoppe, K.; Chadderton, L.T.

    2008-01-01

    An overview is given on a family of novel electronic devices consisting of an insulating layer containing conducting or semiconducting nuclear tracks, deposited on a semiconducting substrate, and connected by at least one back and two surface contacts. Conducting and semiconducting latent tracks may emerge directly from swift heavy ion irradiation. Etched tracks in insulators can be filled with adequate materials to make them conducting or semiconducting. For this purpose metallic or semiconducting nanoclusters were deposited. We have denoted termed these devices made with latent tracks as 'tunable electronic anisotropic material on semiconductor' (TEAMS), if based on latent ion tracks, and as 'tunable electronic material in pores in oxide on semiconductor' (TEMPOS), if based on etched tracks. Depending on the band-to-band transition between tracks and substrate and on the ratio of surface to track conductivity, the current/voltage characteristics of TEAMS and TEMPOS structures can be modified in many different ways leading to tunable resistors, capacitors and diodes. Both devices show negative differential resistances. This should enable tunable tunneldiodes. TEAMS or TEMPOS structures can be controlled by various external physical and/or chemical parameters leading to sensors. It is even possible to combine different input currents and/or external parameters according to AND/OR logics. The currents through a clustered layer on a TEMPOS structure can be described by the Barbasi-Albert model of network theory enabling to calculate a 'radius of influence'r ROI around each surface contact, beyond which neighboring contacts do not influence each other. The radius of influence can be well below 1μm leading to nanometric TEMPOS structures

  17. Studies of bulk heterojunction solar cells

    Science.gov (United States)

    Cossel, Raquel; McIntyre, Max; Tzolov, Marian

    We are studying bulk heterojunction solar cells that were fabricated using a mixture of PCPDTBT and PCBM­C60. The impedance data of the cells in dark responded like a simple RC circuit. The value of the dielectric constant derived from these results is consistent with the values reported in the literature for these materials. We are showing that the parallel resistance in the equivalent circuit of linear lump elements can be interpreted using the DC current­voltage measurements. The impedance spectra under light illumination indicated the existence of additional polarization. This extra feature can be described by a model that includes a series RC circuit in parallel with the equivalent circuit for a device in dark. The physical interpretation of the additional polarization is based on photo­generated charges getting trapped in wells, which have a characteristic relaxation time corresponding to the observed break frequency in the impedance spectra. We have studied the influence of the anode and cathode interface on this phenomena, either by using different interface materials, or by depositing the metal electrode while the substate is heated.

  18. Hybrid tandem solar cells with depleted-heterojunction quantum dot and polymer bulk heterojunction subcells

    KAUST Repository

    Kim, Taesoo

    2015-10-01

    We investigate hybrid tandem solar cells that rely on the combination of solution-processed depleted-heterojunction colloidal quantum dot (CQD) and bulk heterojunction polymer:fullerene subcells. The hybrid tandem solar cell is monolithically integrated and electrically connected in series with a suitable p-n recombination layer that includes metal oxides and a conjugated polyelectrolyte. We discuss the monolithic integration of the subcells, taking into account solvent interactions with underlayers and associated constraints on the tandem architecture, and show that an adequate device configuration consists of a low bandgap CQD bottom cell and a high bandgap polymer:fullerene top cell. Once we optimize the recombination layer and individual subcells, the hybrid tandem device reaches a VOC of 1.3V, approaching the sum of the individual subcell voltages. An impressive fill factor of 70% is achieved, further confirming that the subcells are efficiently connected via an appropriate recombination layer. © 2015.

  19. Conducting polymer based biomolecular electronic devices

    Indian Academy of Sciences (India)

    Conducting polymers; LB films; biosensor microactuators; monolayers. ... have been projected for applications for a wide range of biomolecular electronic devices such as optical, electronic, drug-delivery, memory and biosensing devices.

  20. Electronic excited states and relaxation dynamics in polymer heterojunction systems

    Science.gov (United States)

    Ramon, John Glenn Santos

    The potential for using conducting polymers as the active material in optoelectronic devices has come to fruition in the past few years. Understanding the fundamental photophysics behind their operations points to the significant role played by the polymer interface in their performance. Current device architectures involve the use of bulk heterojunctions which intimately blend the donor and acceptor polymers to significantly increase not only their interfacial surface area but also the probability of exciton formation within the vicinity of the interface. In this dissertation, we detail the role played by the interface on the behavior and performance of bulk heterojunction systems. First, we explore the relation between the exciton binding energy to the band offset in determining device characteristics. As a general rule, when the exciton binding energy is greater than the band offset, the exciton remains the lowest energy excited state leading to efficient light-emitting properties. On the other hand, if the offset is greater than the binding energy, charge separation becomes favorable leading to better photovoltaic behavior. Here, we use a Wannier function, configuration interaction based approach to examine the essential excited states and predict the vibronic absorption and emission spectra of the PPV/BBL, TFB/F8BT and PFB/F8BT heterojunctions. Our results underscore the role of vibrational relaxation in the formation of charge-transfer states following photoexcitation. In addition, we look at the relaxation dynamics that occur upon photoexcitation. For this, we adopt the Marcus-Hush semiclassical method to account for lattice reorganization in the calculation of the interconversion rates in TFB/F8BT and PFB/F8BT. We find that, while a tightly bound charge-transfer state (exciplex) remains the lowest excited state, a regeneration pathway to the optically active lowest excitonic state in TFB/F8BT is possible via thermal repopulation from the exciplex. Finally

  1. A novel fabrication of MEH-PPV/Al:ZnO nanorod arrays based ordered bulk heterojunction hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Sahdan, M.Z.; Mamat, M.H.; Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z.; Husairi, S.S. [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA -UiTM, 40450 Shah Alam, Selangor (Malaysia); Md Sin, N.D. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2013-06-15

    Vertically aligned Al:ZnO nanorod arrays has been used as window layer in the fabrication of ordered bulk heterojuction hybrid solar cells. The utilization of the nanorod arrays will enhance the electron transport in vertical direction and also for light harvesting applications for high performance devices. The performance of this hybrid polymer/metal oxide photovoltaic devices based on MEH-PPV [poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene)] and oriented Al:ZnO nanorod arrays is studied. The Al:ZnO nanorod arrays with a diameter of about 70–80 nm and thickness of approximately 500 nm were successfully grown on Al:ZnO-coated ITO substrate by sonicated sol–gel immersion technique. The photovoltaic performance of a short-circuit current density of 5.320 mA/cm{sup 2}, an open-circuit voltage of 195 mV and a fill factor of 27.71%, with a power conversion efficiency of about 0.287% under AM 1.5 illumination (100 mW/cm{sup 2}). To the best of our knowledge, preparation of aligned Al:ZnO nanorod arrays for this type of solar cell fabrication has not been reported by any research group.

  2. Intrinsic white-light emission from zinc oxide nanorods heterojunctions on large-area substrates

    Science.gov (United States)

    Willander, Magnus; Nur, O.; Zaman, S.; Zainelabdin, A.; Amin, G.; Sadaf, J. R.; Israr, M. Q.; Bano, N.; Hussain, I.; Alvi, N. H.

    2011-02-01

    Zinc oxide (ZnO) and especially in the nanostructure form is currently being intensively investigated world wide for the possibility of developing different new photonic devices. We will here present our recent findings on the controlled low temperature chemical growth of ZnO nanorods (NRs) on different large area substrates. Many different heterojunctions of ZnO NRs and p-substrates including those of crystalline e.g. p-GaN, p-SiC or amorphous nature e.g. p-polymer coated plastic and p-polymer coated paper will be shown. Moreover, the effect of the p-electrode of these heterojunctions on tuning the emitted wavelength and changing the light quality will be discussed. An example using ZnO NR/p-GaN will be shown and the electrical and electro-optical characteristics will be analyzed. For these heterojunctions the effect of post growth annealing and its effect on the electroluminescence (EL) spectrum will be shown. Finally, intrinsic white light emitting diodes based on ZnO NRs on foldable and disposable amorphous substrates (plastic and paper) will also be presented.

  3. Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications.

    Science.gov (United States)

    Hu, Liang; Yuan, Jun; Ren, Yi; Wang, Yan; Yang, Jia-Qin; Zhou, Ye; Zeng, Yu-Jia; Han, Su-Ting; Ruan, Shuangchen

    2018-06-10

    High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Critical components for diamond-based quantum coherent devices

    International Nuclear Information System (INIS)

    Greentree, Andrew D; Olivero, Paolo; Draganski, Martin; Trajkov, Elizabeth; Rabeau, James R; Reichart, Patrick; Gibson, Brant C; Rubanov, Sergey; Huntington, Shane T; Jamieson, David N; Prawer, Steven

    2006-01-01

    The necessary elements for practical devices exploiting quantum coherence in diamond materials are summarized, and progress towards their realization documented. A brief review of future prospects for diamond-based devices is also provided

  5. Microfiber devices based on carbon materials

    OpenAIRE

    Gengzhi Sun; Xuewan Wang; Peng Chen

    2015-01-01

    Microfiber devices are able to extend the micro/nano functionalities of materials or devices to the macroscopic scale with excellent flexibility and weavability, promising a variety of unique applications and, sometimes, also improved performance as compared with bulk counterparts. The fiber electrodes in these devices are often made of carbon materials (e.g. carbon nanotubes and graphene) because of their exceptional electrical, mechanical, and structural properties. Covering the latest deve...

  6. Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering

    Science.gov (United States)

    Tsai, Chia-Lung; Lu, Yi-Chen; Hsiung Chang, Sheng

    2018-07-01

    Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m‑2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

  7. A Flexible Microcontroller-Based Data Acquisition Device

    OpenAIRE

    Hercog, Darko; Gergič, Bojan

    2014-01-01

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This d...

  8. Ultraviolet electroluminescence from Au/MgO/MgxZn1−xO heterojunction diodes and the observation of Zn-rich cluster emission

    International Nuclear Information System (INIS)

    Liu, C.Y.; Xu, H.Y.; Sun, Y.; Zhang, C.; Ma, J.G.; Liu, Y.C.

    2014-01-01

    In this work, ultraviolet (UV) electroluminescence (EL) is achieved from Au/MgO/Mg x Zn 1−x O heterojunction diodes. The EL mechanism and laser forming process are discussed based on the energy band diagram, impact-ionization process and disordered optical structure. For ZnO and low Mg-content MgZnO devices, their EL spectra show single near-band-edge (NBE) emission. While in high Mg-content MgZnO devices, the emission from self-formed Zn-rich MgZnO clusters is observed and also contribute to the UV EL band. These Zn-rich clusters can act as thermally-stable luminescence centers, suggesting a promising route for developing MgZnO-based UV light-emitting devices. -- Highlights: • A series of Au/MgO/Mg x Zn 1−x O heterojunction diodes with multiple Mg compositions are fabricated and ultraviolet electroluminescence is achieved. • EL mechanism and laser forming process are discussed based on energy band diagram, impact-ionization process and disordered optical structure. • The transition from spontaneous to stimulated emission is observed in these heterojunctions, and the lasing mode is random laser. • In high Mg-content MgZnO devices, the emission from self-formed Zn-rich clusters is observed, which are thermally stable luminescence centers

  9. Distributed-feedback single heterojunction GaAs diode laser

    International Nuclear Information System (INIS)

    Scifres, D.R.; Burnham, R.D.; Streifer, W.

    1974-01-01

    Laser operation of single-heterojunction GaAl As/GaAs diode lasers using a periodic structure within the gain medium of the device, thereby obviating the need for carefully cleaved end crystal faces to produce feedback, is reported. By varying the grating period, wavelengths from 8430 to 8560 A were observed. The threshold current densities were of the same order as for normal single heterojunction diode lasers. Some advantages in output wavelengths were observed over lasers with cleared faces. (U.S.)

  10. Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

    KAUST Repository

    Debnath, Ratan

    2010-01-01

    With an aim to reduce the cost of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces costly Au with a low-cost Ni-based Ohmic contact. The resultant devices achieve 3.5% Air Mass 1.5 power conversion efficiency. Only by incorporating a 1.2-nm-thick LiF layer between the PbS quantum dot film and Ni, we were able to prevent undesired reactions and degradation at the metal-semiconductor interface. © 2010 American Institute of Physics.

  11. Probability density of tunneled carrier states near heterojunctions calculated numerically by the scattering method.

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Myers, Samuel M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    The energy-dependent probability density of tunneled carrier states for arbitrarily specified longitudinal potential-energy profiles in planar bipolar devices is numerically computed using the scattering method. Results agree accurately with a previous treatment based on solution of the localized eigenvalue problem, where computation times are much greater. These developments enable quantitative treatment of tunneling-assisted recombination in irradiated heterojunction bipolar transistors, where band offsets may enhance the tunneling effect by orders of magnitude. The calculations also reveal the density of non-tunneled carrier states in spatially varying potentials, and thereby test the common approximation of uniform- bulk values for such densities.

  12. Hybrid thin films based on bilayer heterojunction of titania nanocrystals/polypyrrole/natural dyes (Kappaphycus alvarezii) materials

    Science.gov (United States)

    Ghazali, Salmah Mohd; Salleh, Hasiah; Dagang, Ahmad Nazri; Ghazali, Mohd Sabri Mohd; Ali, Nik Aziz Nik; Rashid, Norlaily Abdul; Kamarulzaman, Nurul Huda; Ahmad, Wan Almaz Dhafina Che Wan

    2017-09-01

    In this research, hybrid thin films which consist of a combination of organic red seaweed (RS) (Kappaphycus alvarezii) and polypyrrole (PPy) with inorganic titania nanocrystals (TiO2 NCs) materials were fabricated. These hybrid thin films were fabricated accordingly with bilayer heterojunction of ITO/TiO2 NCs/PPy/RS via electrochemical method using Electrochemical Impedance Spectroscopy (EIS). The effect of number of scans (thickness) of titania on optical and electrical properties of hybrid thin films were studied. TiO2 NCs function as an electron acceptor and electronic conductor. Meanwhile, PPy acts as holes conductor and RS dye acts as a photosensitizer enhances the optical and electrical properties of the thin films. The UV absorption spectrum of TiO2 NCs, PPy and RS are characterized by UV-Visible spectroscopy, while the functional group of RS was characterized by Fourier transform infrared spectroscopy (FTIR). The UV-Vis spectra showed that TiO2 NCs, PPy and RS were absorbed over a wide range of light spectrum which were 200-300 nm, 300-900 nm and 250-900 nm; respectively. The FTIR spectra of the RS showed the presence of hydroxyl group which was responsible for a good sensitizer for these hybrid solar cells. The electrical conductivity of these hybrid thin films were measured by using four point probes. The electrical conductivity of ITO/ (1)TiO2 NCs/PPy/RS thin film under the radiation of 100 Wm-2 was 0.062 Scm-1, hence this hybrid thin films can be applied in solar cell application.

  13. Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

    Science.gov (United States)

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  14. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  15. {100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  16. Construction of Nanowire Heterojunctions: Photonic Function-Oriented Nanoarchitectonics.

    Science.gov (United States)

    Li, Yong Jun; Yan, Yongli; Zhao, Yong Sheng; Yao, Jiannian

    2016-02-10

    Nanophotonics has received broad research interest because it may provide an alternative opportunity to overcome the fundamental limitations of electronic circuits. So far, diverse photonic functions, such as light generation, modulation, and detection, have been realized based on various nano-materials. The exact structural features of these material systems, including geometric characteristics, surface morphology, and material composition, play a key role in determining the photonic functions. Therefore, rational designs and constructions of materials on both morphological and componential levels, namely nanoarchitectonics, are indispensable for any photonic device with specific functionalities. Recently, a series of nanowire heterojunctions (NWHJs), which are usually made from two or more kinds of material compositions, were constructed for novel photonic applications based on various interactions between different materials at the junctions, for instance, energy transfer, exciton-plasmon coupling, or photon-plasmon coupling. A summary of these works is necessary to get a more comprehensive understanding of the relationship between photonic functions and architectonics of NWHJs, which will be instructive for designing novel photonic devices towards integrated circuits. Here, photonic function oriented nanoarchitectonics based on recent breakthroughs in nanophotonic devices are discussed, with emphasis on the design mechanisms, fabrication strategies, and excellent performances. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Vaginal rejuvenation using energy-based devices

    Directory of Open Access Journals (Sweden)

    Cheryl Karcher, MD

    2016-09-01

    Full Text Available Physiologic changes in a woman’s life, such as childbirth, weight fluctuations, and hormonal changes due to aging and menopause, may alter the laxity of the vaginal canal, damage the pelvic floor, and devitalize the mucosal tone of the vaginal wall. These events often lead to the development of genitourinary conditions such as stress urinary incontinence; vaginal atrophy; dryness; and physiologic distress affecting a woman’s quality of life, self-confidence, and sexuality. Various treatment modalities are currently available to manage these indications, varying from invasive vaginal surgery to more benign treatments like topical vaginal hormonal gels or hormone-replacement therapy. A new trend gaining momentum is the advent of energy-based devices for vaginal rejuvenation that apply thermal or nonthermal energy to the various layers of the vaginal tissue, stimulating collagen regeneration contracture of elastin fibers, neovascularization, and improved vaginal lubrication. This review aims to present the available technologies offering vaginal rejuvenation and the scientific evidence that underlines their safety and efficacy for this indication.

  18. Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

    Science.gov (United States)

    Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

    2015-01-01

    Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

  19. Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction

    International Nuclear Information System (INIS)

    Karimov, Khasan S.; Muqeet Rehman, M.; Zameer Abbas, S.; Ahmad, Zubair; Touati, Farid; Mahroof-Tahir, M.

    2015-01-01

    A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H 2 Pc are fabricated by vacuum deposition of the CuPc and H 2 Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30–40 μm. For the current–voltage (I–V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120–150. Under the switching condition, the electric current increases ∼ 80–100 times. A comparison between the forward and reverse I–V characteristics shows the presence of rectifying behavior. (paper)

  20. A systematic approach to solvent selection based on cohesive energy densities in a molecular bulk heterojunction system

    Energy Technology Data Exchange (ETDEWEB)

    Walker, Bright; Duong, Duc T.; Dang, Xuan-Dung; Kim, Chunki; Granstrom, Jimmy; Nguyen, Thuc-Quyen [Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106 (United States); Tamayo, Arnold [Department of Chemistry and Geochemistry, Colorado School of Mines, 1500 Illinois Street, Golden, CO, 80401 (United States)

    2011-03-18

    The solubilities of 3,6-bis(5-(benzofuran-2-yl)thiophen-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo[3,4-c]pyrrole-1,4-dione (DPP(TBFu){sub 2}) and [6,6]-phenyl-C{sub 71}-butyric acid methyl ester (PC{sub 71}BM) in a series of solvents are measured, and this data is used to calculate the Hansen solubility parameters of the two materials. The dispersion, polar, and H-bonding parameters of DPP(TBFu){sub 2} and PC{sub 71}BM were found to be (19.3, 4.8, 6.3) and (20.2, 5.4, 4.5) MPa{sup 1/2}, respectively, with an error of {+-} 0.8 MPa{sup 1/2}. Based on the solubility properties of the two materials, three new solvents (thiophene, trichloroethylene and carbon disulfide) were utilized for the DPP(TBFu){sub 2}:PC{sub 71}BM system which, after device optimization, led to power conversion efficiencies up to 4.3%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Integrating Sphere-based Weathering Device

    Data.gov (United States)

    Federal Laboratory Consortium — Description:In the artificial ultraviolet (UV) weathering of materials, a need exists for weathering devices that can uniformly illuminate test specimens with a high...

  2. Toward biomaterial-based implantable photonic devices

    Directory of Open Access Journals (Sweden)

    Humar Matjaž

    2017-03-01

    Full Text Available Optical technologies are essential for the rapid and efficient delivery of health care to patients. Efforts have begun to implement these technologies in miniature devices that are implantable in patients for continuous or chronic uses. In this review, we discuss guidelines for biomaterials suitable for use in vivo. Basic optical functions such as focusing, reflection, and diffraction have been realized with biopolymers. Biocompatible optical fibers can deliver sensing or therapeutic-inducing light into tissues and enable optical communications with implanted photonic devices. Wirelessly powered, light-emitting diodes (LEDs and miniature lasers made of biocompatible materials may offer new approaches in optical sensing and therapy. Advances in biotechnologies, such as optogenetics, enable more sophisticated photonic devices with a high level of integration with neurological or physiological circuits. With further innovations and translational development, implantable photonic devices offer a pathway to improve health monitoring, diagnostics, and light-activated therapies.

  3. Pyridine Based Polymer Light-Emitting Devices

    National Research Council Canada - National Science Library

    Wang, Y

    1997-01-01

    ...) as a hole transporting/electron blocking layer. This improves the device efficiency and brightness significantly due to the charge confinement and exciplex emission at the PVK/emitting polymer interface...

  4. A high-sensitivity, fast-response, rapid-recovery p–n heterojunction photodiode based on rutile TiO{sub 2} nanorod array on p-Si(1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Selman, Abbas M., E-mail: alabbasiabbas@yahoo.co.uk [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Department of Pharmacology and Toxicology, College of Pharmacy, University of Kufa, Najaf (Iraq); Hassan, Z.; Husham, M.; Ahmed, Naser M. [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)

    2014-06-01

    The growth and characterization of a p–n heterojunction photodiode were studied. This photodiode was based on rutile TiO{sub 2} nanorods (NRs) grown on p-type (1 1 1)-oriented silicon substrate seeded with a TiO{sub 2} layer synthesized by radio-frequency (RF) reactive magnetron sputtering. Chemical bath deposition (CBD) was performed to grow rutile TiO{sub 2} NRs on Si substrate. The structural and optical properties of the sample were studied by X-ray diffraction (XRD) and field emission-scanning electron microscopy (FESEM) analyses. Results showed the tetragonal rutile structure of the synthesized TiO{sub 2} NRs. Optical properties were further examined by photoluminescence spectroscopy, and a high-intensity UV peak centered at around 392 nm compared with visible defect peaks centered at 527 and 707 nm was observed. Upon exposure to 395 nm light (2.3 mW/cm) at five-bias voltage, the device showed 2.9 × 10{sup 2} sensitivity. In addition, the internal gain of the photodiode was 3.92, and the photoresponse peak was 106 mA/W. Furthermore, the photocurrent was 3.06 × 10{sup −4} A. The response and the recovery times were calculated to be 10.4 and 11 ms, respectively, upon illumination to a pulse UV light (405 nm, 0.22 mW/cm{sup 2}) at five-bias voltage. All of these results demonstrate that this high-quality photodiode can be a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  5. The Physics of Small Molecule Acceptors for Efficient and Stable Bulk Heterojunction Solar Cells

    KAUST Repository

    Gasparini, Nicola

    2018-01-29

    Organic bulk heterojunction solar cells based on small molecule acceptors have recently seen a rapid rise in the power conversion efficiency with values exceeding 13%. This impressive achievement has been obtained by simultaneous reduction of voltage and charge recombination losses within this class of materials as compared to fullerene-based solar cells. In this contribution, the authors review the current understanding of the relevant photophysical processes in highly efficient nonfullerene acceptor (NFA) small molecules. Charge generation, recombination, and charge transport is discussed in comparison to fullerene-based composites. Finally, the authors review the superior light and thermal stability of nonfullerene small molecule acceptor based solar cells, and highlight the importance of NFA-based composites that enable devices without early performance loss, thus resembling so-called burn-in free devices.

  6. The Physics of Small Molecule Acceptors for Efficient and Stable Bulk Heterojunction Solar Cells

    KAUST Repository

    Gasparini, Nicola; Wadsworth, Andrew; Moser, Maximilian; Baran, Derya; McCulloch, Iain; Brabec, Christoph J.

    2018-01-01

    Organic bulk heterojunction solar cells based on small molecule acceptors have recently seen a rapid rise in the power conversion efficiency with values exceeding 13%. This impressive achievement has been obtained by simultaneous reduction of voltage and charge recombination losses within this class of materials as compared to fullerene-based solar cells. In this contribution, the authors review the current understanding of the relevant photophysical processes in highly efficient nonfullerene acceptor (NFA) small molecules. Charge generation, recombination, and charge transport is discussed in comparison to fullerene-based composites. Finally, the authors review the superior light and thermal stability of nonfullerene small molecule acceptor based solar cells, and highlight the importance of NFA-based composites that enable devices without early performance loss, thus resembling so-called burn-in free devices.

  7. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  8. Electronic Transport Parameter of Carbon Nanotube Metal-Semiconductor On-Tube Heterojunction

    Directory of Open Access Journals (Sweden)

    Sukirno

    2009-03-01

    Full Text Available Carbon Nanotubes research is one of the top five hot research topics in physics since 2006 because of its unique properties and functionalities, which leads to wide-range applications. One of the most interesting potential applications is in term of nanoelectronic device. It has been modeled carbon nanotubes heterojunction, which was built from two different carbon nanotubes, that one is metallic and the other one is semiconducting. There are two different carbon nanotubes metal-semiconductor heterojunction. The first one is built from CNT(10,10 as metallic carbon nanotube and CNT (17,0 as semiconductor carbon nanotube. The other one is built from CNT (5,5 as metallic carbon nanotube and CNT (8,0. All of the semiconducting carbon nanotubes are assumed to be a pyridine-like N-doped. Those two heterojunctions are different in term of their structural shape and diameter. It has been calculated their charge distribution and potential profile, which would be useful for the simulation of their electronic transport properties. The calculations are performed by using self-consistent method to solve Non-Homogeneous Poisson’s Equation with aid of Universal Density of States calculation method for Carbon Nanotubes. The calculations are done by varying the doping fraction of the semiconductor carbon nanotubes The electron tunneling transmission coefficient, for low energy region, also has been calculated by using Wentzel-Kramer-Brillouin (WKB approximation. From the calculation results, it is obtained that the charge distribution as well as the potential profile of this device is doping fraction dependent. It is also inferred that the WKB method is fail to be used to calculate whole of the electron tunneling coefficient in this system. It is expected that further calculation for electron tunneling coefficient in higher energy region as well as current-voltage characteristic of this system will become an interesting issue for this carbon nanotube based

  9. Understanding the phase separation evolution in efficient P3HT:IC70BA-based bulk-heterojunction polymer solar cells

    International Nuclear Information System (INIS)

    Fan Xi; Guo Shishang; Fang Guojia; Li Songzhan

    2013-01-01

    The effects of solvent and thermal annealing on the morphology of the active layers and the photovoltaic performance of bulk-heterojunction (BHJ) polymer solar cells (PSCs) are investigated systematically, for PSCs based on a blend of poly(3-hexylthiophene) (P3HT) as a donor and indene-C 70 bisadduct (IC 70 BA) as an acceptor. IC 70 BA crystallites are found reasonably well dispersed in the P3HT matrix after spin-coating. However, the IC 70 BA crystallites coarsen in size after annealing, which are clearly evidenced by transmission electron microscopy. Simultaneously, space charge limited current measurements demonstrate that solvent and thermal annealing can improve the hole and electron mobility, which reduces charge-carrier recombination and improves charge-carrier transport in the P3HT and IC 70 BA blend layers. The corresponding current-voltage curves are measured in quantity and we propose a model to show the variation of the ordered structure of P3HT domains and IC 70 BA crystallite characteristics in the phase separation process, expressing a viewpoint on the high performance of BHJ PSCs.

  10. Toward flexible polymer and paper-based energy storage devices

    Energy Technology Data Exchange (ETDEWEB)

    Nyholm, Leif [Department of Materials Chemistry, The Aangstroem Laboratory, Uppsala University, Box 538, SE-751 21 Uppsala (Sweden); Nystroem, Gustav; Mihranyan, Albert; Stroemme, Maria [Nanotechnology and Functional Materials, Department of Engineering Sciences, The Aangstroem Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

    2011-09-01

    All-polymer and paper-based energy storage devices have significant inherent advantages in comparison with many currently employed batteries and supercapacitors regarding environmental friendliness, flexibility, cost and versatility. The research within this field is currently undergoing an exciting development as new polymers, composites and paper-based devices are being developed. In this report, we review recent progress concerning the development of flexible energy storage devices based on electronically conducting polymers and cellulose containing composites with particular emphasis on paper-based batteries and supercapacitors. We discuss recent progress in the development of the most commonly used electronically conducting polymers used in flexible device prototypes, the advantages and disadvantages of this type of energy storage devices, as well as the two main approaches used in the manufacturing of paper-based charge storage devices. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. High photocurrent gain in NiO thin film/M-doped ZnO nanorods (M=Ag, Cd and Ni) heterojunction based ultraviolet photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Echresh, Ahmad, E-mail: ahmadechresh@gmail.com [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Echresh, Mohammad [Department of Physics, Sanati Hoveizeh University, Ahvaz (Iran, Islamic Republic of); Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-5818358183 Linköping (Sweden); Nur, Omer; Willander, Magnus [Department of Science and Technology, Physical Electronics and Nanotechnology Division, Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden)

    2016-10-15

    The thermal evaporation method has been used to deposit p-type NiO thin film, which was combined with hydrothermally grown n-type pure and M-doped ZnO nanorods (M=Ag, Cd and Ni) to fabricate a high performance p-n heterojunction ultraviolet photodiodes. The fabricated photodiodes show high rectification ratio and relatively low leakage current. The p-NiO/n-Zn{sub 0.94}Ag{sub 0.06}O heterojunction photodiode displays the highest photocurrent gain (~1.52×10{sup 4}), a photoresponsivity of ~4.48×10{sup 3} AW{sup −1} and a photosensitivity of ~13.56 compared with the other fabricated photodiodes. The predominated transport mechanisms of the p-n heterojunction ultraviolet photodiodes at low and high applied forward bias may be recombination-tunneling and space charge limited current, respectively.

  12. Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays

    Directory of Open Access Journals (Sweden)

    Švrček Vladimir

    2009-01-01

    Full Text Available Abstract A silicon nanocrystals (Si-ncs conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene (P3HT polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic interaction between the polymer and surfactant-free Si-ncs is achieved. Temperature-dependent photoluminescence and transport properties were studied and the ratio between the photo- and dark-conductivity of 1.7 was achieved at ambient conditions. Furthermore the porous titanium dioxide (TiO2 nanotubes’ template was used for vertical order of photosensitive Si-ncs/P3HT-based blend. The anodization of titanium foil in ethylene glycol-based electrolyte containing fluoride ions and subsequent thermal annealing were used to prepare anatase TiO2nanotube arrays. The arrays with nanotube inner diameter of 90 and 50 nm were used for vertical ordering of the Si-ncs/P3HT bulk-heterojunction.

  13. Low-threshold pure UV electroluminescence from n-ZnO:Al/i-layer/n-GaN heterojunction

    International Nuclear Information System (INIS)

    Li Songzhan; Fang Guojia; Long Hao; Wang Haoning; Huang Huihui; Mo Xiaoming; Zhao Xingzhong

    2012-01-01

    Ultraviolet (UV) electroluminescence (EL) of n-ZnO:Al (AZO)/i-layer/n-GaN heterojunctions with different intrinsic layers has been obtained. Rectifying behavior and EL spectra of the heterojunctions are investigated at room temperature. Under positive voltage, a dominant UV emission peak around ∼370 nm is observed for both AZO/i-ZnO/n-GaN and AZO/i-MgO/n-GaN heterojunctions. Nevertheless, the UV emission peak intensity of AZO/i-MgO/n-GaN heterojunction is much stronger than that of AZO/i-ZnO/n-GaN heterojunction at the same voltage. The threshold voltage of AZO/i-MgO/n-GaN heterostructured device is as low as 2.3 V. The difference of EL spectra and the emission mechanism in these devices are discussed. - Highlights: ► UV electroluminescence of n-ZnO:Al/i-layer/n-GaN heterojunctions has been obtained. ► Under positive voltage, a dominant UV emission peak around ∼370 nm is observed for both heterojunctions. ► The UV emission peak intensity of the heterojunction with i-MgO layer is much stronger than that with i-ZnO layer at the same voltage. ► The threshold voltage of n-ZnO:Al/i-MgO/n-GaN heterostructured device is as low as 2.3 V.

  14. Magneto-electronic properties and spin-resolved I-V curves of a Co/GeSe heterojunction diode: an ab initio study

    Science.gov (United States)

    Makinistian, Leonardo; Albanesi, Eduardo A.

    2013-06-01

    We present ab initio calculations of magnetoelectronic and transport properties of the interface of hcp Cobalt (001) and the intrinsic narrow-gap semiconductor germanium selenide (GeSe). Using a norm-conserving pseudopotentials scheme within DFT, we first model the interface with a supercell approach and focus on the spin-resolved densities of states and the magnetic moment (spin and orbital components) at the different atomic layers that form the device. We also report a series of cuts (perpendicular to the plane of the heterojunction) of the electronic and spin densities showing a slight magnetization of the first layers of the semiconductor. Finally, we model the device with a different scheme: using semiinfinite electrodes connected to the heterojunction. These latter calculations are based upon a nonequilibrium Green's function approach that allows us to explore the spin-resolved electronic transport under a bias voltage (spin-resolved I-V curves), revealing features of potential applicability in spintronics.

  15. Pentacene–fullerene bulk-heterojunction solar cell: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Pramanik, Anup [Department of Chemistry, Visva-Bharati University, Santiniketan 731235 (India); Sarkar, Sunandan [Department of Chemistry, Visva-Bharati University, Santiniketan 731235 (India); Dept. of Physical Chemistry, Palacký University, Olomouc (Czech Republic); Pal, Sougata [Department of Chemistry, University of Gour Banga, Malda 732103 (India); Sarkar, Pranab, E-mail: pranab.sarkar@visva-bharati.ac.in [Department of Chemistry, Visva-Bharati University, Santiniketan 731235 (India)

    2015-06-12

    We perform DFT/TDDFT calculations to study the optoelectronic properties of some pentacene-based organic molecules and their derivatives, which can serve as donor moiety when blended with fullerene acceptors in the bulk-heterojunction solar cell model. We are motivated by a recent experiment in which an unoptimized device was shown to have a good photovoltaic performance and we aim to further improve the efficiency of this device. We try to optimize the photovoltaic properties on the basis of a quantum-mechanical calculation of the frontier energy levels and of the absorption properties of individual molecules and of the molecule–fullerine composite. - Highlights: • Optoelectronic properties of pentacene–fullerene nanocomposites are presented. • Photovoltaic properties of the nanocomposites are predicted. • DFT/TDDFT results are in well agreement with available experimental results. • Calculated results give a direction for optimizing device performance.

  16. Model-based engineering for medical-device software.

    Science.gov (United States)

    Ray, Arnab; Jetley, Raoul; Jones, Paul L; Zhang, Yi

    2010-01-01

    This paper demonstrates the benefits of adopting model-based design techniques for engineering medical device software. By using a patient-controlled analgesic (PCA) infusion pump as a candidate medical device, the authors show how using models to capture design information allows for i) fast and efficient construction of executable device prototypes ii) creation of a standard, reusable baseline software architecture for a particular device family, iii) formal verification of the design against safety requirements, and iv) creation of a safety framework that reduces verification costs for future versions of the device software. 1.

  17. New Development of Membrane Base Optoelectronic Devices

    Directory of Open Access Journals (Sweden)

    Leon Hamui

    2017-12-01

    Full Text Available It is known that one factor that affects the operation of optoelectronic devices is the effective protection of the semiconductor materials against environmental conditions. The permeation of atmospheric oxygen and water molecules into the device structure induces degradation of the electrodes and the semiconductor. As a result, in this communication we report the fabrication of semiconductor membranes consisting of Magnesium Phthalocyanine-allene (MgPc-allene particles dispersed in Nylon 11 films. These membranes combine polymer properties with organic semiconductors properties and also provide a barrier effect for the atmospheric gas molecules. They were prepared by high vacuum evaporation and followed by thermal relaxation technique. For the characterization of the obtained membranes, Fourier-transform infrared spectroscopy (FT-IR, scanning electron microscopy (SEM, and energy dispersive spectroscopy (EDS were used to determine the chemical and microstructural properties. UV-ViS, null ellipsometry, and visible photoluminescence (PL at room temperature were used to characterize the optoelectronic properties. These results were compared with those obtained for the organic semiconductors: MgPc-allene thin films. Additionally, semiconductor membranes devices have been prepared, and a study of the device electronic transport properties was conducted by measuring electrical current density-voltage (J-V characteristics by four point probes with different wavelengths. The resistance properties against different environmental molecules are enhanced, maintaining their semiconductor functionality that makes them candidates for optoelectronic applications.

  18. Solution processed organic bulk heterojunction tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht, Steve; Neher, Dieter [Soft Matter Physics, University of Potsdam, D-14476 Potsdam (Germany)

    2011-07-01

    One of the critical issues regarding the preparation of organic tandem solar cells from solution is the central recombination contact. This contact should be highly transparent and conductive to provide high recombination currents. Moreover it should protect the 1st subcell from the solution processing of the 2nd subcell. Here, we present a systematic study of various recombination contacts in organic bulk heterojunction tandem solar cells made from blends of different polymers with PCBM. We compare solution processed recombination contacts fabricated from metal-oxides (TiO{sub 2} and ZnO) and PEDOT:PSS with evaporated recombination contacts made from thin metal layers and molybdenum-oxide. The solar cell characteristics as well as the morphology of the contacts measured by AFM and SEM are illustrated. To compare the electrical properties of the varying contacts we show measurements on single carrier devices for different contact-structures. Alongside we present the results of optical modeling of the subcells and the complete tandem device and relate these results to experimental absorption and reflection spectra of the same structures. Based on these studies, layer thicknesses were adjusted for optimum current matching and device performance.

  19. Copper phthalocyanine and metal free phthalocyanine bulk heterojunction photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Farooq, Amjad, E-mail: amjad.farooq1212@hotmail.com [Wah Engineering College, University of Wah, Wah Cantt. 47040 (Pakistan); GIK Institute of Engineering Sciences and Technology, Topi 23640, Swabi (Pakistan); Karimov, Kh.S. [GIK Institute of Engineering Sciences and Technology, Topi 23640, Swabi (Pakistan); Physical Technical Institute, Aini St. 299/1, Dushanbe 734063 (Tajikistan); Ahmed, Nisar; Ali, Taimoor [GIK Institute of Engineering Sciences and Technology, Topi 23640, Swabi (Pakistan); Khalid Alamgir, M. [National Institute of Vacuum Science and Technology, NCP complex, Islamabad 44000 (Pakistan); Usman, Muhammad [Experimental Physics Laboratories, National Centre for Physics, Quaid-i-Azam University, Islamabad 44000 (Pakistan)

    2015-01-15

    In this study we present the dependence of electrical properties of copper phthalocyanine (CuPc) and metal free phthalocyanine (H{sub 2}Pc) bulk heterojunction structure under different illumination levels. To fabricate the device on ITO coated glass substrate the bulk heterojunction thin film of CuPc and H{sub 2}Pc with thickness varying from 100 nm to 300 nm are deposited by thermal evaporator. Aluminum thin film was deposited by thermal evaporation as a top contact. The optical properties of the fabricated device are investigated using UV–vis spectroscopy. The current-voltage characteristics in dark and under illumination show that the device is sensitive towards visible light. The absorption spectrum describes its photo sensitivity in the range of wavelength from 200 nm to 850 nm. Simulation of current-intensity of light curve is carried out and experimental results are found in good agreement with simulated ones.

  20. Copper phthalocyanine and metal free phthalocyanine bulk heterojunction photodetector

    International Nuclear Information System (INIS)

    Farooq, Amjad; Karimov, Kh.S.; Ahmed, Nisar; Ali, Taimoor; Khalid Alamgir, M.; Usman, Muhammad

    2015-01-01

    In this study we present the dependence of electrical properties of copper phthalocyanine (CuPc) and metal free phthalocyanine (H 2 Pc) bulk heterojunction structure under different illumination levels. To fabricate the device on ITO coated glass substrate the bulk heterojunction thin film of CuPc and H 2 Pc with thickness varying from 100 nm to 300 nm are deposited by thermal evaporator. Aluminum thin film was deposited by thermal evaporation as a top contact. The optical properties of the fabricated device are investigated using UV–vis spectroscopy. The current-voltage characteristics in dark and under illumination show that the device is sensitive towards visible light. The absorption spectrum describes its photo sensitivity in the range of wavelength from 200 nm to 850 nm. Simulation of current-intensity of light curve is carried out and experimental results are found in good agreement with simulated ones

  1. Understanding noise suppression in heterojunction field-effect transistors

    International Nuclear Information System (INIS)

    Green, F.

    1996-01-01

    Full text: The enhanced transport properties displayed by quantum-well-confined, two-dimensional, electron systems underpin the success of heterojunction, field-effect transistors. At cryogenic temperatures, these devices exhibit impressive mobilities and, as a result, high signal gain and low noise. Conventional wisdom has it that the same favourable conditions also hold for normal room-temperature operation. In that case, however, high mobilities are precluded by abundant electron-phonon scattering. Our recent study of nonequilibrium current noise shows that quantum confinement, not high mobility, is the principal source of noise in these devices; this opens up new and exciting opportunities in low-noise transistor design. As trends in millimetre-wave technology push frequencies beyond 100 GHz, it is essential to develop a genuine understanding of noise processes in heterojunction devices

  2. Interfacial Characteristics of Efficient Bulk Heterojunction Solar Cells Fabricated on MoOx Anode Interlayers.

    Science.gov (United States)

    Jasieniak, Jacek J; Treat, Neil D; McNeill, Christopher R; de Villers, Bertrand J Tremolet; Della Gaspera, Enrico; Chabinyc, Michael L

    2016-05-01

    The role of the interface between an MoOx anode interlayer and a polymer:fullerene bulk heterojunction is investigated. Processing differences in the MoOx induce large variations in the vertical stratification of the bulk heterojunction films. These variations are found to be inconsistent in predicting device performance, with a much better gauge being the quantity of polymer chemisorbed to the anode interlayer. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

    Science.gov (United States)

    Zhang, Chaomin

    It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch ( 0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation

  4. Magnesium-based methods, systems, and devices

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yufeng; Ban, Chunmei; Ruddy, Daniel; Parilla, Philip A.; Son, Seoung-Bum

    2017-12-12

    An aspect of the present invention is an electrical device, where the device includes a current collector and a porous active layer electrically connected to the current collector to form an electrode. The porous active layer includes MgB.sub.x particles, where x.gtoreq.1, mixed with a conductive additive and a binder additive to form empty interstitial spaces between the MgB.sub.x particles, the conductive additive, and the binder additive. The MgB.sub.x particles include a plurality of boron sheets of boron atoms covalently bound together, with a plurality of magnesium atoms reversibly intercalated between the boron sheets and ionically bound to the boron atoms.

  5. Plasmonically enhanced hot electron based photovoltaic device.

    Science.gov (United States)

    Atar, Fatih B; Battal, Enes; Aygun, Levent E; Daglar, Bihter; Bayindir, Mehmet; Okyay, Ali K

    2013-03-25

    Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths.

  6. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

    NARCIS (Netherlands)

    Bruce, S.P.O.; Vandamme, L.K.J.; Rydberg, A.

    1999-01-01

    Transimpedance amplifiers have been used for direct study of current noise in silicon germanium (SiGe) heterojunction bipolar transistors (HBT's) at different biasing conditions. This has facilitated a wider range of resistances in the measurement circuit around the transistor than is possible when

  7. Interfacial and Electrode Modifications in P3HT:PC61BM based Organic Solar Cells: Devices, Processing and Characterization

    Science.gov (United States)

    Das, Sayantan

    The inexorable upsurge in world’s energy demand has steered the search for newer renewable energy sources and photovoltaics seemed to be one of the best alternatives for energy production. Among the various photovoltaic technologies that emerged, organic/polymer photovoltaics based on solution processed bulk-heterojunctions (BHJ) of semiconducting polymers has gained serious attention owing to the use of inexpensive light-weight materials, exhibiting high mechanical flexibility and compatibility with low temperature roll-to-roll manufacturing techniques on flexible substrates. The most widely studied material to date is the blend of regioregular P3HT and PC61BM used as donor and acceptor materials. The object of this study was to investigate and improve the performance/stability of the organic solar cells by use of inexpensive materials. In an attempt to enhance the efficiency of organic solar cells, we have demonstrated the use of hexamethyldisilazane (HMDS) modified indium tin oxide (ITO) electrode in bulk heterojunction solar cell structure The device studies showed a significant enhancement in the short-circuit current as well as in the shunt resistance on use of the hexamethyldisilazane (HMDS) layer. In another approach a p-type CuI hole-transport layer was utilized that could possibly replace the acidic PEDOT:PSS layer in the fabrication of high-efficiency solar cells. The device optimization was done by varying the concentration of CuI in the precursor solution which played an important role in the efficiency of the solar cell devices. Recently a substantial amount of research has been focused on identifying suitable interfacial layers in organic solar cells which has efficient charge transport properties. It was illustrated that a thin layer of silver oxide interfacial layer showed a 28% increase in power conversion efficiency in comparison to that of the control cell. The optoelectronic properties and morphological features of indium-free Zn

  8. Value-based procurement of medical devices: Application to devices for mechanical thrombectomy in ischemic stroke.

    Science.gov (United States)

    Trippoli, Sabrina; Caccese, Erminia; Marinai, Claudio; Messori, Andrea

    2018-03-01

    In the acute ischemic stroke, endovascular devices have shown promising clinical results and are also likely to represent value for money, as several modeling studies have shown. Pharmacoeconomic evaluations in this field, however, have little impact on the procurement of these devices. The present study explored how complex pharmacoeconomic models that evaluate effectiveness and cost can be incorporated into the in-hospital procurement of thrombectomy devices. As regards clinical modeling, we extracted outcomes at three months from randomized trials conducted for four thrombectomy devices, and we projected long-term results using standard Markov modeling. In estimating QALYs, the same model was run for the four devices. As regards economic modeling, we firstly estimated for each device the net monetary benefit (NMB) per patient (threshold = $60,000 per QALY); then, we simulated a competitive tender across the four products by determining the tender-based score (on a 0-to-100 scale). Prices of individual devices were obtained from manufacturers. Extensive sensitivity testing was applied to our analyses. For the four devices (Solitaire, Trevo, Penumbra, Solumbra), QALYs were 1.86, 1.52, 1,79, 1.35, NMB was $101,824, $83,546, $101,923, $69,440, and tender-based scores were 99.70, 43.43, 100, 0, respectively. Sensitivity analysis confirmed findings from base-case. Our results indicate that, in the field of thrombectomy devices, incorporating the typical tools of cost-effectiveness into the processes of tenders and procurement is feasible. Bridging the methodology of cost-effectiveness with the every-day practice of in-hospital procurement can contribute to maximizing the health returns that are generated by in-hospital expenditures for medical devices. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. Electronic structure of defects in semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Haussy, Bernard; Ganghoffer, Jean Francois

    2002-01-01

    Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

  10. Highly air stable passivation of graphene based field effect devices.

    Science.gov (United States)

    Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

    2015-02-28

    The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

  11. Silicon based light-emitting materials and devices

    International Nuclear Information System (INIS)

    Chen Weide

    1999-01-01

    Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

  12. p-type Mesoscopic nickel oxide/organometallic perovskite heterojunction solar cells.

    Science.gov (United States)

    Wang, Kuo-Chin; Jeng, Jun-Yuan; Shen, Po-Shen; Chang, Yu-Cheng; Diau, Eric Wei-Guang; Tsai, Cheng-Hung; Chao, Tzu-Yang; Hsu, Hsu-Cheng; Lin, Pei-Ying; Chen, Peter; Guo, Tzung-Fang; Wen, Ten-Chin

    2014-04-23

    In this article, we present a new paradigm for organometallic hybrid perovskite solar cell using NiO inorganic metal oxide nanocrystalline as p-type electrode material and realized the first mesoscopic NiO/perovskite/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) heterojunction photovoltaic device. The photo-induced transient absorption spectroscopy results verified that the architecture is an effective p-type sensitized junction, which is the first inorganic p-type, metal oxide contact material for perovskite-based solar cell. Power conversion efficiency of 9.51% was achieved under AM 1.5 G illumination, which significantly surpassed the reported conventional p-type dye-sensitized solar cells. The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics.

  13. Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

    International Nuclear Information System (INIS)

    Fu, S.-I.; Lai, P.-H.; Tsai, Y.-Y.; Hung, C.-W.; Yen, C.-H.; Cheng, S.-Y.; Liu, W.-C.

    2006-01-01

    An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β max , offset voltage ΔV CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications

  14. Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.

    Science.gov (United States)

    Wu, Bing; Zhao, Yinghe; Nan, Haiyan; Yang, Ziyi; Zhang, Yuhan; Zhao, Huijuan; He, Daowei; Jiang, Zonglin; Liu, Xiaolong; Li, Yun; Shi, Yi; Ni, Zhenhua; Wang, Jinlan; Xu, Jian-Bin; Wang, Xinran

    2016-06-08

    Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

  15. ZnO-graphene quantum dots heterojunctions for natural sunlight-driven photocatalytic environmental remediation

    Science.gov (United States)

    Kumar, Suneel; Dhiman, Ankita; Sudhagar, Pitchaimuthu; Krishnan, Venkata

    2018-07-01

    In this work, we report the formation of heterojunctions comprising of graphene quantum dots (GQD) decorated ZnO nanorods (NR) and its use as efficient photocatalysts for environmental remediation. The heterojunctions has been designed to be active both in the UV and visible light regions and anticipated utilize the maximum part of the solar light spectrum. In this view, we examined the photocatalytic performance of our heterojunctions towards the degradation of colored pollutant (methylene blue (MB) dye) and a colorless pollutant (carbendazim (CZ) fungicide) under sunlight irradiation. Compared to bare photocatalyst ZnO and GQD, the heterojunction with 2 wt% of GQD (ZGQD2) showed the best photocatalytic activity by effectively degrading (about 95%) of organic pollutants (MB and CZ) from water within a short span of 70 min. The superior photocatalytic activity of these ZnO-GQD heterojunctions could be attributed to efficient charge carrier separation lead suppressed recombination rate at photocatalyst interfaces. In addition to the enhanced light absorption from UV to visible region, the high specific surface area of ZGQD2 heterojunction (353.447 m2 g-1) also imparts strong adsorption capacity for pollutants over catalyst surface, resulting in high photoactivity. Based on the obtained results, band gap alignment at ZnO-GQD heterojunction and active species trapping experiments, a plausible mechanism is proposed for photocatalytic reaction. The excellent photostability and recyclability of the ZnO-GQD heterojunctions fostering as promising photocatalyst candidate for environmental remediation applications.

  16. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  17. Evaluation of polymer based third order nonlinear integrated optics devices

    NARCIS (Netherlands)

    Driessen, A.; Hoekstra, Hugo; Blom, F.C.; Horst, F.; Horst, F.; Krijnen, Gijsbertus J.M.; van Schoot, J.B.P.; van Schoot, J.B.P.; Lambeck, Paul; Popma, T.J.A.; Diemeer, Mart

    Nonlinear polymers are promising materials for high speed active integrated optics devices. In this paper we evaluate the perspectives polymer based nonlinear optical devices can offer. Special attention is directed to the materials aspects. In our experimental work we applied mainly Akzo Nobel DANS

  18. Ambient Sound-Based Collaborative Localization of Indeterministic Devices

    NARCIS (Netherlands)

    Kamminga, Jacob Wilhelm; Le Viet Duc, L Duc; Havinga, Paul J.M.

    2016-01-01

    Localization is essential in wireless sensor networks. To our knowledge, no prior work has utilized low-cost devices for collaborative localization based on only ambient sound, without the support of local infrastructure. The reason may be the fact that most low-cost devices are indeterministic and

  19. A microfluidic device based on an evaporation-driven micropump

    NARCIS (Netherlands)

    Nie, C.; Frijns, A.J.H.; Mandamparambil, R.; Toonder, J.M.J. den

    2015-01-01

    In this paper we introduce a microfluidic device ultimately to be applied as a wearable sweat sensor. We show proof-of-principle of the microfluidic functions of the device, namely fluid collection and continuous fluid flow pumping. A filter-paper based layer, that eventually will form the interface

  20. Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

    OpenAIRE

    Wang, Lei; Wang, Qing

    2017-01-01

    In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D) communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the netw...

  1. Probing Exciton Diffusion and Dissociation in Single-Walled Carbon Nanotube-C60 Heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Dowgiallo, Anne-Marie; Mistry, Kevin S.; Johnson, Justin C.; Reid, Obadiah G.; Blackburn, Jeffrey L.

    2016-05-19

    The efficiency of thin-film organic photovoltaic (OPV) devices relies heavily upon the transport of excitons to type-II heterojunction interfaces, where there is sufficient driving force for exciton dissociation and ultimately the formation of charge carriers. Semiconducting single-walled carbon nanotubes (SWCNTs) are strong near-infrared absorbers that form type-II heterojunctions with fullerenes such as C60. Although the efficiencies of SWCNT-fullerene OPV devices have climbed over the past few years, questions remain regarding the fundamental factors that currently limit their performance. In this study, we determine the exciton diffusion length in the C60 layer of SWCNT-C60 bilayer active layers using femtosecond transient absorption measurements. We demonstrate that hole transfer from photoexcited C60 molecules to SWCNTs can be tracked by the growth of narrow spectroscopic signatures of holes in the SWCNT 'reporter layer'. In bilayers with thick C60 layers, the SWCNT charge-related signatures display a slow rise over hundreds of picoseconds, reflecting exciton diffusion through the C60 layer to the interface. A model based on exciton diffusion with a Beer-Lambert excitation profile, as well as Monte Carlo simulations, gives the best fit to the data as a function of C60 layer thickness using an exciton diffusion length of approximately 5 nm.

  2. A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells

    KAUST Repository

    Chavali, Raghu Vamsi Krishna

    2016-11-30

    Suns–Voc measurements exclude parasitic series resistance effects and are, therefore, frequently used to study the intrinsic potential of a given photovoltaic technology. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the Suns–Voc curves often feature a peculiar turnaround at high illumination intensities. Generally, this turn-around is attributed to extrinsic Schottky contacts that should disappear with process improvement. In this paper, we demonstrate that this voltage turnaround may be an intrinsic feature of SHJ solar cells, arising from the heterojunction (HJ), as well as its associated carrier-transport barriers, inherent to SHJ devices. We use numerical simulations to explore the full current–voltage (J–V) characteristics under different illumination and ambient temperature conditions. Using these characteristics, we establish the voltage and illumination-intensity bias, as well as temperature conditions necessary to observe the voltage turnaround in these cells. We validate our turnaround hypothesis using an extensive set of experiments on a high-efficiency SHJ solar cell and a molybdenum oxide (MoOx) based hole collector HJ solar cell. Our work consolidates Suns–Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in HJ devices.

  3. Vertical MoSe2-MoO x p-n heterojunction and its application in optoelectronics

    Science.gov (United States)

    Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

    2018-01-01

    The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ˜8 μm. Vertical MoSe2-MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2-MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W-1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm-2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

  4. Semiconductor Heterojunction Engineering

    National Research Council Canada - National Science Library

    Franciosi, Alfonso

    1997-01-01

    .... The possibility of tuning the interface potential barrier to a given device application and optimizing carrier injection or confinement would offer an important new degree of freedom in device design...

  5. Electro-optical modeling of bulk heterojunction solar cells

    Science.gov (United States)

    Kirchartz, Thomas; Pieters, Bart E.; Taretto, Kurt; Rau, Uwe

    2008-11-01

    We introduce a model for charge separation in bulk heterojunction solar cells that combines exciton transport to the interface between donor and acceptor phases with the dissociation of the bound electron/hole pair. We implement this model into a standard semiconductor device simulator, thereby creating a convenient method to simulate the optical and electrical characteristics of a bulk heterojunction solar cell with a commercially available program. By taking into account different collection probabilities for the excitons in the polymer and the fullerene, we are able to reproduce absorptance, internal and external quantum efficiency, as well as current/voltage curves of bulk heterojunction solar cells. We further investigate the influence of mobilities of the free excitons as well as the mobilities of the free charge carriers on the performance of bulk heterojunction solar cells. We find that, in general, the highest efficiencies are achieved with the highest mobilities. However, an optimum finite mobility of free charge carriers can result from a large recombination velocity at the contacts. In contrast, Langevin-type of recombination cannot lead to finite optimum mobilities even though this mechanism has a strong dependence on the free carrier mobilities.

  6. Product-based Safety Certification for Medical Devices Embedded Software.

    Science.gov (United States)

    Neto, José Augusto; Figueiredo Damásio, Jemerson; Monthaler, Paul; Morais, Misael

    2015-01-01

    Worldwide medical device embedded software certification practices are currently focused on manufacturing best practices. In Brazil, the national regulatory agency does not hold a local certification process for software-intensive medical devices and admits international certification (e.g. FDA and CE) from local and international industry to operate in the Brazilian health care market. We present here a product-based certification process as a candidate process to support the Brazilian regulatory agency ANVISA in medical device software regulation. Center of Strategic Technology for Healthcare (NUTES) medical device embedded software certification is based on a solid safety quality model and has been tested with reasonable success against the Class I risk device Generic Infusion Pump (GIP).

  7. Visualizing excitations at buried heterojunctions in organic semiconductor blends.

    Science.gov (United States)

    Jakowetz, Andreas C; Böhm, Marcus L; Sadhanala, Aditya; Huettner, Sven; Rao, Akshay; Friend, Richard H

    2017-05-01

    Interfaces play a crucial role in semiconductor devices, but in many device architectures they are nanostructured, disordered and buried away from the surface of the sample. Conventional optical, X-ray and photoelectron probes often fail to provide interface-specific information in such systems. Here we develop an all-optical time-resolved method to probe the local energetic landscape and electronic dynamics at such interfaces, based on the Stark effect caused by electron-hole pairs photo-generated across the interface. Using this method, we found that the electronically active sites at the polymer/fullerene interfaces in model bulk-heterojunction blends fall within the low-energy tail of the absorption spectrum. This suggests that these sites are highly ordered compared with the bulk of the polymer film, leading to large wavefunction delocalization and low site energies. We also detected a 100 fs migration of holes from higher- to lower-energy sites, consistent with these charges moving ballistically into more ordered polymer regions. This ultrafast charge motion may be key to separating electron-hole pairs into free charges against the Coulomb interaction.

  8. Energy-Based Devices in Treatment of Acne Vulgaris.

    Science.gov (United States)

    Handler, Marc Z; Bloom, Bradley S; Goldberg, David J

    2016-05-01

    Acne vulgaris is a chronic dermatologic complaint with a multifactorial cause. Traditionally, antibiotics and retinoids have been used to manage the condition; patient compliance has been an ongoing issue. A variety of energy-based devices have been reported to be effective in the treatment of acne vulgaris. To review and summarize the current literature specific to treatment of acne vulgaris with energy-based devices. A review of the current literature of energy-based devices used for the treatment of acne vulgaris. Although limited randomized controlled trials for the treatment of acne have been performed, significant clinical improvement of acne vulgaris, especially of inflammatory lesions, has been demonstrated with a variety of energy-based devices. Newer approaches may lead to even better results.

  9. Negative luminescence and devices based on this phenomenon

    International Nuclear Information System (INIS)

    Ivanov-Omskii, V. I.; Matveev, B. A.

    2007-01-01

    Recent publications concerned with infrared emitters whose electrical modulation results in absorption of radiation detected as negative luminescence are reviewed. The main properties of the devices based on this phenomenon are analyzed

  10. Negative luminescence and devices based on this phenomenon

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov-Omskii, V I; Matveev, B. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: bmat@iropt3.ioffe.rssi.ru

    2007-03-15

    Recent publications concerned with infrared emitters whose electrical modulation results in absorption of radiation detected as negative luminescence are reviewed. The main properties of the devices based on this phenomenon are analyzed.

  11. Hybrid organic-inorganic heterojunctions for photovoltaic applications

    OpenAIRE

    Dietmüller, Roland

    2012-01-01

    Hybrid organic-inorganic bulk heterojunction solar cells based on silicon nanocrystals (Si-nc) have been realized and investigated. A photo-induced charge transfer could be demonstrated in composites made of silicon nanocrystals and poly(3-hexylthiophene) (P3HT) or [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) via light-induced electron spin resonance measurements. With bulk heterojunction solar cells made of P3HT/Si-nc composites in a sandwich structure, open-circuit voltages of up to 0....

  12. Remote media vision-based computer input device

    Science.gov (United States)

    Arabnia, Hamid R.; Chen, Ching-Yi

    1991-11-01

    In this paper, we introduce a vision-based computer input device which has been built at the University of Georgia. The user of this system gives commands to the computer without touching any physical device. The system receives input through a CCD camera; it is PC- based and is built on top of the DOS operating system. The major components of the input device are: a monitor, an image capturing board, a CCD camera, and some software (developed by use). These are interfaced with a standard PC running under the DOS operating system.

  13. A quantum computer based on recombination processes in microelectronic devices

    International Nuclear Information System (INIS)

    Theodoropoulos, K; Ntalaperas, D; Petras, I; Konofaos, N

    2005-01-01

    In this paper a quantum computer based on the recombination processes happening in semiconductor devices is presented. A 'data element' and a 'computational element' are derived based on Schokley-Read-Hall statistics and they can later be used to manifest a simple and known quantum computing process. Such a paradigm is shown by the application of the proposed computer onto a well known physical system involving traps in semiconductor devices

  14. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  15. 2-D tiles declustering method based on virtual devices

    Science.gov (United States)

    Li, Zhongmin; Gao, Lu

    2009-10-01

    Generally, 2-D spatial data are divided as a series of tiles according to the plane grid. To satisfy the effect of vision, the tiles in the query window including the view point would be displayed quickly at the screen. Aiming at the performance difference of real storage devices, we propose a 2-D tiles declustering method based on virtual device. Firstly, we construct a group of virtual devices which have same storage performance and non-limited capacity, then distribute the tiles into M virtual devices according to the query window of 2-D tiles. Secondly, we equably map the tiles in M virtual devices into M equidistant intervals in [0, 1) using pseudo-random number generator. Finally, we devide [0, 1) into M intervals according to the tiles distribution percentage of every real storage device, and distribute the tiles in each interval in the corresponding real storage device. We have designed and realized a prototype GlobeSIGht, and give some related test results. The results show that the average response time of each tile in the query window including the view point using 2-D tiles declustering method based on virtual device is more efficient than using other methods.

  16. A Flexible Microcontroller-Based Data Acquisition Device

    Directory of Open Access Journals (Sweden)

    Darko Hercog

    2014-06-01

    Full Text Available This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC. The presented embedded DAQ device contains a preloaded program (firmware that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID. This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI, can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

  17. A flexible microcontroller-based data acquisition device.

    Science.gov (United States)

    Hercog, Darko; Gergič, Bojan

    2014-06-02

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

  18. Performance study of radiation detectors based on semi-insulating GaAs with P+homo- and heterojunction blocking electrode

    Czech Academy of Sciences Publication Activity Database

    Dubecky, F.; Hulicius, Eduard; Frigeri, P.; Perd´ochová-Šagátová, A.; Zat´ko, B.; Hubík, Pavel; Gombia, E.; Boháček, P.; Pangrác, Jiří; Franchi, S.; Nečas, V.

    2006-01-01

    Roč. 563, - (2006), s. 159-162 ISSN 0168-9002 R&D Projects: GA AV ČR(CZ) IAA1010404 Grant - others:Slovak Grant Agency for Science(SK) 2/4151/24 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaAs radiation detector * blocking electrode * P + -N homojunction and heterojunction * gamma irradiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.185, year: 2006

  19. Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Oxland, R K; Rahman, F

    2008-01-01

    This paper reports on the development of effective passivation techniques for improving and stabilizing the characteristics of InP/InGaAs heterojunction bipolar transistors. Two different methods for carrying out sulfur-based surface passivations are compared. These include exposure to gaseous hydrogen sulfide and immersion treatment in an ammonium sulfide solution. The temporal behaviour of effects resulting from such passivation treatments is reported. It is shown that liquid phase passivation has a larger beneficial effect on device performance than gas phase passivation. This is explained in terms of the polarity of passivating species and the exposed semiconductor surface. Finally, device encapsulation in a novel chalcogenide polymer is shown to be effective in preserving the benefits of surface passivation treatments. The relevant properties of this encapsulation material are also discussed

  20. Charge carriers at organic heterojunction interface: Exciplex emission or electroplex emission?

    Science.gov (United States)

    Yang, Shengyi; Zhang, Xiulong; Hou, Yanbing; Deng, Zhenbo; Xu, Xurong

    2007-05-01

    We report the electroluminescence (EL) of organic heterojunction devices based on N ,N'-diphenyl-N ,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4',-diamine (TPD) and 2-(4'-biphenyl)-5-(4″-tert-butylphenyl)-1,3,4-oxadiazole (PBD). Besides monomolecular emissions from TPD, there are two additional EL peaks at around 460 and 480nm from the bilayer device indium tin oxide (ITO)/TPD(100nm )/PBD(45nm)/Al. Our experimental data confirmed that the EL emission maximized at around 460nm is from electroplex as the result of charge carriers cross recombination at the TPD/PBD interface and the EL emission maximized at around 480nm originates from (TPD*PBD)-type exciplex.

  1. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

    Directory of Open Access Journals (Sweden)

    E. Kasper

    2012-01-01

    Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

  2. Innovative energy absorbing devices based on composite tubes

    Science.gov (United States)

    Tiwari, Chandrashekhar

    Analytical and experimental study of innovative load limiting and energy absorbing devices are presented here. The devices are based on composite tubes and can be categorized in to two groups based upon the energy absorbing mechanisms exhibited by them, namely: foam crushing and foam fracturing. The device based on foam crushing as the energy absorbing mechanism is composed of light weight elastic-plastic foam filling inside an angle ply composite tube. The tube is tailored to have a high Poisson’s ratio (>20). Upon being loaded the device experiences large transverse contraction resulting in rapid decrease in diameter. At a certain axial load the foam core begins to crush and energy is dissipated. This device is termed as crush tube device. The device based upon foam shear fracture as the energy absorbing mechanism involves an elastic-plastic core foam in annulus of two concentric extension-twist coupled composite tubes with opposite angles of fibers. The core foam is bonded to the inner and outer tube walls. Upon being loaded axially, the tubes twist in opposite directions and fracture the core foam in out of plane shear and thus dissipate the energy stored. The device is termed as sandwich core device (SCD). The devices exhibit variations in force-displacement characteristics with changes in design and material parameters, resulting in wide range of energy absorption capabilities. A flexible matrix composite system was selected, which was composed of high stiffness carbon fibers as reinforcements in relatively low stiffness polyurethane matrix, based upon large strain to failure capabilities and large beneficial elastic couplings. Linear and non-linear analytical models were developed encapsulating large deformation theory of the laminated composite shells (using non-linear strain energy formulation) to the fracture mechanics of core foam and elastic-plastic deformation theory of the foam filling. The non-linear model is capable of including material and

  3. Nanotube devices based crossbar architecture: toward neuromorphic computing

    International Nuclear Information System (INIS)

    Zhao, W S; Gamrat, C; Agnus, G; Derycke, V; Filoramo, A; Bourgoin, J-P

    2010-01-01

    Nanoscale devices such as carbon nanotube and nanowires based transistors, memristors and molecular devices are expected to play an important role in the development of new computing architectures. While their size represents a decisive advantage in terms of integration density, it also raises the critical question of how to efficiently address large numbers of densely integrated nanodevices without the need for complex multi-layer interconnection topologies similar to those used in CMOS technology. Two-terminal programmable devices in crossbar geometry seem particularly attractive, but suffer from severe addressing difficulties due to cross-talk, which implies complex programming procedures. Three-terminal devices can be easily addressed individually, but with limited gain in terms of interconnect integration. We show how optically gated carbon nanotube devices enable efficient individual addressing when arranged in a crossbar geometry with shared gate electrodes. This topology is particularly well suited for parallel programming or learning in the context of neuromorphic computing architectures.

  4. Substrate structures for InP-based devices

    International Nuclear Information System (INIS)

    Wanlass, M.W.; Sheldon, P.

    1990-01-01

    A substrate structure for an InP-based semiconductor device having an InP based film is described. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at the opposite end to the InP=based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device

  5. Medical Device Integration Model Based on the Internet of Things

    Science.gov (United States)

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  6. A Rhythm-Based Authentication Scheme for Smart Media Devices

    Directory of Open Access Journals (Sweden)

    Jae Dong Lee

    2014-01-01

    Full Text Available In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users’ convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience.

  7. A rhythm-based authentication scheme for smart media devices.

    Science.gov (United States)

    Lee, Jae Dong; Jeong, Young-Sik; Park, Jong Hyuk

    2014-01-01

    In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users' convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS) is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience.

  8. Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

    Directory of Open Access Journals (Sweden)

    Lei Wang

    2017-01-01

    Full Text Available In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the networks successfully recover the original file. The experimental results show that secure network coding is very feasible and suitable for such file sharing. Moreover, the sharing efficiency and security outperform traditional replication-based sharing scheme.

  9. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

    Science.gov (United States)

    Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

    2017-09-13

    A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

  10. Fabrication and electrical characterization of polyaniline-silicon heterojunction for gamma radiation dosimetry application

    International Nuclear Information System (INIS)

    Laranjeira, Jane Maria Goncalves

    2004-08-01

    In this work a technique has been developed to fabricate high quality polyaniline-silicon heterojunction diodes for use as gas and/or ionizing radiation sensors. Polyaniline thin films (40 nm thick) produced by spin-coating on silicon substrates, were the active part of the junction structure. The devices presented excellent reproducibility of their electrical characteristics with high rectification ratio, 60,000 at ±1.0 V, and typical reverse current at - 1.0 V of 3 nA at 295 K. A G/I x G plot has been used to analyze the current-voltage characteristics, yielding typical series resistance of 4 kΩ ± 5% and ideality factor in a range of 1,9 ± 0.5%. The heterojunction diode presents high sensitivity to gamma radiation in the dose range of 3 x 10 -2 to 7 kGy with a linear response in the forward and reverse bias. The excellent electrical characteristics together with the linear response with the dose, strongly suggest the application of this device for spectrometry or dosimetry of high doses of gamma radiation. These devices presented high sensitivity to gas moistures such as ammonia, nitric acid and trichloroethylene. In both cases the sensitivity was observed through shifts of the current-voltage curves, which can be easily monitored to provide a calibration curve of the sensor either as a radiation dosimeter or as a gas sensor for use in applications for gas monitoring or radiation dosimetry. Several aspects of the reliability physics of silicon-polyaniline heterojunction, such as degradation effects induced by local heating, charge trapping and temperature changes, have been discussed. These results further confirm the quality of the devices electrical characteristics and their suitability for radiation and gas sensors applications. Another interesting results presented in this work was the use of polyemeraldine nanofilms (thickness in the range 30-50 nm) deposited by 'spin coating' on glass substrates as an optical dosimeter for gamma radiation based on the

  11. Efficiency-limiting processes in OPV bulk heterojunctions of GeNIDTBT and IDT-based acceptors

    KAUST Repository

    Al-Saggaf, Sarah M.

    2018-01-01

    to the ubiquitously used fullerene derivatives. NFAs showed a rapid increase in efficiencies, now exceeding a PCE of 13%. In my thesis research, I used two small molecule IDT-based acceptors, namely O-IDTBR and O-IDTBCN, in combination with a wide bandgap donor

  12. Organic hybrid planar-nanocrystalline bulk heterojunctions

    Science.gov (United States)

    Forrest, Stephen R [Ann Arbor, MI; Yang, Fan [Piscataway, NJ

    2011-03-01

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  13. Structural determinants in the bulk heterojunction.

    Science.gov (United States)

    Acocella, Angela; Höfinger, Siegfried; Haunschmid, Ernst; Pop, Sergiu C; Narumi, Tetsu; Yasuoka, Kenji; Yasui, Masato; Zerbetto, Francesco

    2018-02-21

    Photovoltaics is one of the key areas in renewable energy research with remarkable progress made every year. Here we consider the case of a photoactive material and study its structural composition and the resulting consequences for the fundamental processes driving solar energy conversion. A multiscale approach is used to characterize essential molecular properties of the light-absorbing layer. A selection of bulk-representative pairs of donor/acceptor molecules is extracted from the molecular dynamics simulation of the bulk heterojunction and analyzed at increasing levels of detail. Significantly increased ground state energies together with an array of additional structural characteristics are identified that all point towards an auxiliary role of the material's structural organization in mediating charge-transfer and -separation. Mechanistic studies of the type presented here can provide important insights into fundamental principles governing solar energy conversion in next-generation photovoltaic devices.

  14. High efficiency rubrene based inverted top-emission organic light emitting devices with a mixed single layer

    International Nuclear Information System (INIS)

    Wang, Zhaokui; Lou, Yanhui; Naka, Shigeki; Okada, Hiroyuki

    2010-01-01

    Inverted top-emission organic light emitting devices (TEOLEDs) with a mixed single layer by mixing of electron transport materials (PyPySPyPy and Alq 3 ), hole transport material (α-NPD) and dope material (rubrene) were investigated. Maximum power efficiency of 3.5 lm/W and maximum luminance of 7000 cd/m 2 were obtained by optimizing the mixing ratio of PyPySPyPy:Alq 3 :α-NPD:rubrene=25:50:25:1. Luminance and power efficiency of mixed single layer device were two times improved compared to bi-layer heterojunction device and tri-layer heterojunction device. Lifetime test also shows that the mixed single layer device exhibits longer operational lifetimes of 343 h, which is three times longer than the 109 h for tri-layer device, and two times longer than the 158 h for bi-layer device. In addition, the maximum luminance and power efficiency were obtained at 20,000 cd/m 2 and 7.5 lm/W, respectively, when a TPD layer of 45 nm was capped onto the top metal electrode.

  15. Mobile device-based optical instruments for agriculture

    Science.gov (United States)

    Sumriddetchkajorn, Sarun

    2013-05-01

    Realizing that a current smart-mobile device such as a cell phone and a tablet can be considered as a pocket-size computer embedded with a built-in digital camera, this paper reviews and demonstrates on how a mobile device can be specifically functioned as a portable optical instrument for agricultural applications. The paper highlights several mobile device-based optical instruments designed for searching small pests, measuring illumination level, analyzing spectrum of light, identifying nitrogen status in the rice field, estimating chlorine in water, and determining ripeness level of the fruit. They are suitable for individual use as well as for small and medium enterprises.

  16. Electrochemical model of the polyaniline based organic memristive device

    International Nuclear Information System (INIS)

    Demin, V. A.; Erokhin, V. V.; Kashkarov, P. K.; Kovalchuk, M. V.

    2014-01-01

    The electrochemical organic memristive device with polyaniline active layer is a stand-alone device designed and realized for reproduction of some synapse properties in the innovative electronic circuits, including the neuromorphic networks capable for learning. In this work, a new theoretical model of the polyaniline memristive is presented. The developed model of organic memristive functioning was based on the detailed consideration of possible electrochemical processes occuring in the active zone of this device. Results of the calculation have demonstrated not only the qualitative explanation of the characteristics observed in the experiment but also the quantitative similarities of the resultant current values. It is shown how the memristive could behave at zero potential difference relative to the reference electrode. This improved model can establish a basis for the design and prediction of properties of more complicated circuits and systems (including stochastic ones) based on the organic memristive devices

  17. Research on ZnO/Si heterojunction solar cells

    DEFF Research Database (Denmark)

    Chen, Li; Chen, Xinliang; Liu, Yiming

    2017-01-01

    We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO: B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c...

  18. Surface wave photonic device based on porous silicon multilayers

    International Nuclear Information System (INIS)

    Guillermain, E.; Lysenko, V.; Benyattou, T.

    2006-01-01

    Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

  19. 3D Printed Photoresponsive Devices Based on Shape Memory Composites.

    Science.gov (United States)

    Yang, Hui; Leow, Wan Ru; Wang, Ting; Wang, Juan; Yu, Jiancan; He, Ke; Qi, Dianpeng; Wan, Changjin; Chen, Xiaodong

    2017-09-01

    Compared with traditional stimuli-responsive devices with simple planar or tubular geometries, 3D printed stimuli-responsive devices not only intimately meet the requirement of complicated shapes at macrolevel but also satisfy various conformation changes triggered by external stimuli at the microscopic scale. However, their development is limited by the lack of 3D printing functional materials. This paper demonstrates the 3D printing of photoresponsive shape memory devices through combining fused deposition modeling printing technology and photoresponsive shape memory composites based on shape memory polymers and carbon black with high photothermal conversion efficiency. External illumination triggers the shape recovery of 3D printed devices from the temporary shape to the original shape. The effect of materials thickness and light density on the shape memory behavior of 3D printed devices is quantified and calculated. Remarkably, sunlight also triggers the shape memory behavior of these 3D printed devices. This facile printing strategy would provide tremendous opportunities for the design and fabrication of biomimetic smart devices and soft robotics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Chemical engineering in the electronics industry: progress towards the rational design of organic semiconductor heterojunctions

    KAUST Repository

    Clancy, Paulette

    2012-01-01

    We review the current status of heterojunction design for combinations of organic semiconductor materials, given its central role in affecting the device performance for electronic devices and solar cell applications. We provide an emphasis on recent progress towards the rational design of heterojunctions that may lead to higher performance of charge separation and mobility. We also play particular attention to the role played by computational approaches and its potential to help define the best choice of materials for solar cell development in the future. We report the current status of the field with respect to such goals. © 2012 Elsevier Ltd.

  1. Chemical engineering in the electronics industry: progress towards the rational design of organic semiconductor heterojunctions

    KAUST Repository

    Clancy, Paulette

    2012-05-01

    We review the current status of heterojunction design for combinations of organic semiconductor materials, given its central role in affecting the device performance for electronic devices and solar cell applications. We provide an emphasis on recent progress towards the rational design of heterojunctions that may lead to higher performance of charge separation and mobility. We also play particular attention to the role played by computational approaches and its potential to help define the best choice of materials for solar cell development in the future. We report the current status of the field with respect to such goals. © 2012 Elsevier Ltd.

  2. Noise and its reduction in graphene based nanopore devices

    International Nuclear Information System (INIS)

    Kumar, Ashvani; Park, Kyeong-Beom; Kim, Hyun-Mi; Kim, Ki-Bum

    2013-01-01

    Ionic current fluctuations in graphene nanopore devices are a ubiquitous phenomenon and are responsible for degraded spatial and temporal resolution. Here, we descriptively investigate the impact of different substrate materials (Si and quartz) and membrane thicknesses on noise characteristics of graphene nanopore devices. To mitigate the membrane fluctuations and pin-hole defects, a SiN x membrane is transferred onto the substrate and a pore of approximately 70 nm in diameter is perforated prior to the graphene transfer. Comprehensive noise study reveals that the few layer graphene transferred onto the quartz substrate possesses low noise level and higher signal to noise ratio as compared to single layer graphene, without deteriorating the spatial resolution. The findings here point to improvement of graphene based nanopore devices for exciting opportunities in future single-molecule genomic screening devices. (paper)

  3. In-situ fabrication of diketopyrrolopyrrole-carbazole-based conjugated polymer/TiO2 heterojunction for enhanced visible light photocatalysis

    Science.gov (United States)

    Yang, Long; Yu, Yuyan; Zhang, Jianling; Chen, Fu; Meng, Xiao; Qiu, Yong; Dan, Yi; Jiang, Long

    2018-03-01

    Aiming at developing highly efficient photocatalysts by broadening the light-harvesting region and suppressing photo-generated electron-hole recombination simultaneously, this work reports rational design and fabrication of donor-acceptor (D-A) conjugated polymer/TiO2 heterojunction catalyst with strong interfacial interactions by a facile in-situ thermal treatment. To expand the light-harvesting window, soluable conjugated copolymers with D-A architecture are prepared by Pd-mediated polycondensation of diketopyrrolopyrrole (DPP) and t-butoxycarbonyl (t-Boc) modified carbazole (Car), and used as visible-light-harvesting antenna to couple with TiO2 nanocrystals. The DPP-Car/TiO2 composites show wide range absorption in 300-1000 nm. To improve the interfacial binding at the interface, a facile in-situ thermal treatment is carried out to cleave the pendant t-Boc groups in carbazole units and liberate the polar amino groups (-NH-) which strongly bind to the surface of TiO2 through dipole-dipole interactions, forming a heterojunction interface. This in-situ thermal treatment changes the surface elemental distribution of TiO2, reinforces the interface bonding at the boundary of conjugated polymers/TiO2 and finally improves the photocatalytic efficiency of DPP-Car/TiO2 under visible-light irradiation. The interface changes are characterized and verified through Fourier-transform infrared spectroscopy (FT-IR), photo images, UV/Vis (solution state and powder diffuse reflection spectroscopy), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), fluorescence, scanning electron microscopy(SEM) and transmission electron microscopy (TEM) techniques. This study provides a new strategy to avoid the low solubility of D-A conjugated polymers and construct highly-efficient conjugated polymer/TiO2 heterojunction by enforcing the interface contact and facilitating charge or energy transfer for the applications in photocatalysis.

  4. High mobility and high concentration Type-III heterojunction FET

    Science.gov (United States)

    Tsu, R.; Fiddy, M. A.; Her, T.

    2018-02-01

    The PN junction was introduced in transistors by doping, resulting in high losses due to Coulomb scattering from the dopants. The MOSFET introduced carriers in the form of electrons and holes with an applied bias to the oxide barrier, resulting in carrier transfer without doping. This avoids high scattering losses and dominates the IC industries. With heterojunctions having valence-band maxima near and even above the conduction-band minimum in the formation of Type-III superlattices, very useful devices, introduced by Tsu, Sai-Halacz, and Esaki, soon followed. If the layer thicknesses are more than the carrier mean-free-path, incoherent scattering results in the formation of carrier transfer via diffusion instead of opening up new energy gaps. The exploitation of carriers without scattering represents a new and significant opportunity in what we call a Broken Gap Heterojunction FET.

  5. Solution-processed all-oxide bulk heterojunction solar cells based on CuO nanaorod array and TiO2 nanocrystals

    Science.gov (United States)

    Wu, Fan; Qiao, Qiquan; Bahrami, Behzad; Chen, Ke; Pathak, Rajesh; Tong, Yanhua; Li, Xiaoyi; Zhang, Tiansheng; Jian, Ronghua

    2018-05-01

    We present a method to synthesize CuO nanorod array/TiO2 nanocrystals bulk heterojunction (BHJ) on fluorine-tin-oxide (FTO) glass, in which single-crystalline p-type semiconductor of the CuO nanorod array is grown on the FTO glass by hydrothermal reaction and the n-type semiconductor of the TiO2 precursor is filled into the CuO nanorods to form well-organized nano-interpenetrating BHJ after air annealing. The interface charge transfer in CuO nanorod array/TiO2 heterojunction is studied by Kelvin probe force microscopy (KPFM). KPFM results demonstrate that the CuO nanorod array/TiO2 heterojunction can realize the transfer of photo-generated electrons from the CuO nanorod array to TiO2. In this work, a solar cell with the structure FTO/CuO nanoarray/TiO2/Al is successfully fabricated, which exhibits an open-circuit voltage (V oc) of 0.20 V and short-circuit current density (J sc) of 0.026 mA cm‑2 under AM 1.5 illumination. KPFM studies indicate that the very low performance is caused by an undesirable interface charge transfer. The interfacial surface potential (SP) shows that the electron concentration in the CuO nanorod array changes considerably after illumination due to increased photo-generated electrons, but the change in the electron concentration in TiO2 is much less than in CuO, which indicates that the injection efficiency of the photo-generated electrons from CuO to TiO2 is not satisfactory, resulting in an undesirable J sc in the solar cell. The interface photovoltage from the KPFM measurement shows that the low V oc results from the small interfacial SP difference between CuO and TiO2 because the low injected electron concentration cannot raise the Fermi level significantly in TiO2. This conclusion agrees with the measured work function results under illumination. Hence, improvement of the interfacial electron injection is primary for the CuO nanorod array/TiO2 heterojunction solar cells.

  6. Small-molecule azomethines: Organic photovoltaics via Schiff base condensation chemistry

    OpenAIRE

    Petrus, M.L.; Bouwer, R.K.M.; Lafont, U.; Athanasopoulos, S.; Greenham, N.C.; Dingemans, T.J.

    2014-01-01

    Conjugated small-molecule azomethines for photovoltaic applications were prepared via Schiff base condensation chemistry. Bulk heterojunction (BHJ) devices exhibit efficiencies of 1.2% with MoOx as the hole-transporting layer. The versatility and simplicity of the chemistry is illustrated by preparing a photovoltaic device directly from the reaction mixture without any form of workup.

  7. III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

    KAUST Repository

    Mishra, Pawan

    2017-04-01

    Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI transition metal dichalcogenides (TMDs) in the form of MX2 has recently emerged as a novel atomic layered material system with excellent thermoelectric, electronic and optoelectronic properties. Also, the recent investigations reveal that the dissimilar heterojunctions formed by TMDs and III-nitrides provide the route for novel devices in the area of optoelectronic, electronics, and water splitting applications. In addition, integration of III-nitrides and TMDs will enable high density integrated optoelectronic circuits and the development of hybrid integration technologies. In this work, we have demonstrated kinetically controlled growth processes in plasma assisted molecular beam epitaxy (PAMBE) for the III-nitrides and their engineered heterostructures. Techniques such as Ga irradiation and nitrogen plasma exposure has been utilized to implement bulk GaN, InGaN and their heterostructures in PAMBE. For the growth of III-nitride based heterostructures, the in-situ surface stoichiometry monitoring (i-SSM) technique was developed and used for implementing stepped and compositionally graded InGaN-based multiple quantum wells (MQWs). Their optical and microstrain analysis in conjunction with theoretical studies confirmed improvement in the radiative recombination rate of the graded-MQWs as compared to that of stepped-MQWs, owing to the reduced strain in graded-MQWs. Our achievement also includes the realization of the p-type MoS2 by engineering pristine MoS2 layers in PAMBE. Mainly, Ga and nitrogen plasma irradiation on the pristine MoS2 in PAMBE has resulted in the realization of the p-type MoS2. Also, GaN epitaxial thin layers were deposited on MoS2/c-sapphire, WSe2/c-sapphire substrates by PAMBE to study the band

  8. Charge transport studies in donor-acceptor block copolymer PDPP-TNT and PC71BM based inverted organic photovoltaic devices processed in room conditions

    International Nuclear Information System (INIS)

    Srivastava, Shashi B.; Singh, Samarendra P.; Sonar, Prashant

    2015-01-01

    Diketopyrrolopyrole-naphthalene polymer (PDPP-TNT), a donor-acceptor co-polymer, has shown versatile behavior demonstrating high performances in organic field-effect transistors (OFETs) and organic photovoltaic (OPV) devices. In this paper we report investigation of charge carrier dynamics in PDPP-TNT, and [6,6]-phenyl C 71 butyric acid methyl ester (PC71BM) bulk-heterojunction based inverted OPV devices using current density-voltage (J-V) characteristics, space charge limited current (SCLC) measurements, capacitance-voltage (C-V) characteristics, and impedance spectroscopy (IS). OPV devices in inverted architecture, ITO/ZnO/PDPP-TNT:PC71BM/MoO 3 /Ag, are processed and characterized at room conditions. The power conversion efficiency (PCE) of these devices are measured ∼3.8%, with reasonably good fill-factor 54.6%. The analysis of impedance spectra exhibits electron’s mobility ∼2 × 10 −3 cm 2 V −1 s −1 , and lifetime in the range of 0.03-0.23 ms. SCLC measurements give hole mobility of 1.12 × 10 −5 cm 2 V −1 s −1 , and electron mobility of 8.7 × 10 −4 cm 2 V −1 s −1

  9. Homogeneous PCBM layers fabricated by horizontal-dip coating for efficient bilayer heterojunction organic photovoltaic cells.

    Science.gov (United States)

    Huh, Yoon Ho; Bae, In-Gon; Jeon, Hong Goo; Park, Byoungchoo

    2016-10-31

    We herein report a homogeneous [6,6]-phenyl C61 butyric acid methyl ester (PCBM) layer, produced by a solution process of horizontal-dipping (H-dipping) to improve the photovoltaic (PV) effects of bilayer heterojunction organic photovoltaic cells (OPVs) based on a bi-stacked poly(3-hexylthiophene) (P3HT) electron donor layer and a PCBM electron acceptor layer (P3HT/PCBM). It was shown that a homogeneous and uniform coating of PCBM layers in the P3HT/PCBM bilayer OPVs resulted in reliable and reproducible device performance. We recorded a power conversion efficiency (PCE) of 2.89%, which is higher than that (2.00%) of bilayer OPVs with a spin-coated PCBM layer. Moreover, introducing surfactant additives of poly(oxyethylene tridecyl ether) (PTE) into the homogeneous P3HT/PCBM PV layers resulted in the bilayer OPVs showing a PCE value of 3.95%, which is comparable to those of conventional bulk-heterojunction (BHJ) OPVs (3.57-4.13%) fabricated by conventional spin-coating. This improved device performance may be attributed to the selective collection of charge carriers at the interfaces among the active layers and electrodes due to the PTE additives as well as the homogeneous formation of the functional PCBM layer on the P3HT layer. Furthermore, H-dip-coated PCBM layers were deposited onto aligned P3HT layers by a rubbing technique, and the rubbed bilayer OPV exhibited improved in-plane anisotropic PV effects with PCE anisotropy as high as 1.81, which is also higher than that (1.54) of conventional rubbed BHJ OPVs. Our results suggest that the use of the H-dip-coating process in the fabrication of PCBM layers with the PTE interface-engineering additive could be of considerable interest to those seeking to improve PCBM-based opto-electrical organic thin-film devices.

  10. Determination of band offsets at GaN/single-layer MoS2 heterojunction

    KAUST Repository

    Tangi, Malleswararao

    2016-07-25

    We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  11. Determination of band offsets at GaN/single-layer MoS{sub 2} heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Janjua, Bilal; Alias, Mohd Sharizal; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Hedhili, Mohamed Nejib; Anjum, Dalaver H. [Adavanced Nanofabrication Imaging and Characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tseng, Chien-Chih; Shi, Yumeng; Li, Lain-Jong [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Joyce, Hannah J. [Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, Cambridgeshire CB3 0FA (United Kingdom)

    2016-07-18

    We report the band alignment parameters of the GaN/single-layer (SL) MoS{sub 2} heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS{sub 2}/c-sapphire. We confirm that the MoS{sub 2} is an SL by measuring the separation and position of room temperature micro-Raman E{sup 1}{sub 2g} and A{sup 1}{sub g} modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS{sub 2} heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS{sub 2} and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  12. Determination of band offsets at GaN/single-layer MoS2 heterojunction

    KAUST Repository

    Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Hedhili, Mohamed N.; Janjua, Bilal; Alias, Mohd Sharizal; Anjum, Dalaver H.; Tseng, Chien-Chih; Shi, Yumeng; Joyce, Hannah J.; Li, Lain-Jong; Ooi, Boon S.

    2016-01-01

    We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  13. Low-Temperature Electrical Characteristics of Si-Based Device with New Tetrakis NiPc-SNS Active Layer

    Science.gov (United States)

    Yavuz, Arzu Büyükyağci; Carbas, Buket Bezgın; Sönmezoğlu, Savaş; Soylu, Murat

    2016-01-01

    A new tetrakis 4-(2,5-di-2-thiophen-2-yl-pyrrol-1-yl)-substituted nickel phthalocyanine (NiPc-SNS) has been synthesized. This synthesized NiPc-SNS thin film was deposited on p-type Si substrate using the spin coating method (SCM) to fabricate a NiPc-SNS/ p-Si heterojunction diode. The temperature-dependent electrical characteristics of the NiPc-SNS/ p-Si heterojunction with good rectifying behavior were investigated by current-voltage ( I- V) measurements between 50 K and 300 K. The results indicate that the ideality factor decreases while the barrier height increases with increasing temperature. The barrier inhomogeneity across the NiPc-SNS/ p-Si heterojunction reveals a Gaussian distribution at low temperatures. These results provide further evidence of the more complicated mechanisms occurring in this heterojunction. Based on these findings, NiPc-SNS/ p-Si junction diodes are feasible for use in low-temperature applications.

  14. Efficient Signature Based Malware Detection on Mobile Devices

    Directory of Open Access Journals (Sweden)

    Deepak Venugopal

    2008-01-01

    Full Text Available The threat of malware on mobile devices is gaining attention recently. It is important to provide security solutions to these devices before these threats cause widespread damage. However, mobile devices have severe resource constraints in terms of memory and power. Hence, even though there are well developed techniques for malware detection on the PC domain, it requires considerable effort to adapt these techniques for mobile devices. In this paper, we outline the considerations for malware detection on mobile devices and propose a signature based malware detection method. Specifically, we detail a signature matching algorithm that is well suited for use in mobile device scanning due to its low memory requirements. Additionally, the matching algorithm is shown to have high scanning speed which makes it unobtrusive to users. Our evaluation and comparison study with the well known Clam-AV scanner shows that our solution consumes less than 50% of the memory used by Clam-AV while maintaining a fast scanning rate.

  15. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  16. Development of induction current acquisition device based on ARM

    Science.gov (United States)

    Ji, Yanju; Liu, Xiyang; Huang, Wanyu; Yao, Jiang; Yuan, Guiyang; Hui, Luan; Guan, Shanshan

    2018-03-01

    We design an induction current acquisition device based on ARM in order to realize high resolution and high sampling rate of acquisition for the induction current in wire-loop. Considering its characteristics of fast attenuation and small signal amplitude, we use the method of multi-path fusion for noise suppression. In the paper, the design is carried out from three aspects of analog circuit and device selection, independent power supply structure and the electromagnetic interference suppression of high frequency. DMA and ping-pong buffer, as a new data transmission technology, solves real time storage problem of massive data. The performance parameters of ARM acquisition device are tested. The comparison test of ARM acquisition device and cRIO acquisition device is performed at different time constants. The results show that it has 120dB dynamic range, 47kHz bandwidth, 96kHz sampling rate, 5μV the smallest resolution, and its average error value is not more than 4%, which proves the high accuracy and stability of the device.

  17. Spintronic materials and devices based on antiferromagnetic metals

    OpenAIRE

    Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

    2017-01-01

    In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring i...

  18. Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

    KAUST Repository

    Tsai, Meng-Lin; Tu, Wei-Chen; Tang, Libin; Wei, Tzu-Chiao; Wei, Wan-Rou; Lau, Shu Ping; Chen, Lih-Juann; He, Jr-Hau

    2015-01-01

    By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.

  19. Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

    KAUST Repository

    Tsai, Meng-Lin

    2015-12-16

    By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.

  20. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

    1999-01-01

    Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

  1. Review on microfluidic paper-based analytical devices towards commercialisation.

    Science.gov (United States)

    Akyazi, Tugce; Basabe-Desmonts, Lourdes; Benito-Lopez, Fernando

    2018-02-25

    Paper-based analytical devices introduce an innovative platform technology for fluid handling and analysis, with wide range of applications, promoting low cost, ease of fabrication/operation and equipment independence. This review gives a general overview on the fabrication techniques reported to date, revealing and discussing their weak points as well as the newest approaches in order to overtake current mass production limitations and therefore commercialisation. Moreover, this review aims especially to highlight novel technologies appearing in literature for the effective handling and controlling of fluids. The lack of flow control is the main problem of paper-based analytical devices, which generates obstacles for marketing and slows down the transition of paper devices from the laboratory into the consumers' hands. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Flexible diode of polyaniline/ITO heterojunction on PET substrate

    Science.gov (United States)

    Bera, A.; Deb, K.; Kathirvel, V.; Bera, T.; Thapa, R.; Saha, B.

    2017-10-01

    Hybrid organic-inorganic heterojunction between polyaniline and ITO film coated on flexible polyethylene terephthalate (PET) substrate has been prepared through vapor phase polymerization process. Polaron and bipolaron like defect states induced hole transport and exceptional mobility makes polyaniline a noble hole transport layer. Thus a p-n junction has been obtained between the hole transport layer of polyaniline and highly conductive n-type layer of ITO film. The synthesis process was carried out using FeCl3 as polymerizing agent in the oxidative chemical polymerization process. The prepared polyaniline has been found to be crystalline on characterization through X-ray diffraction measurement. X-ray photoelectron spectroscopic measurements were done for compositional analysis of the prepared film. The UV-vis-NIR absorbance spectra obtained for polyaniline shows the characteristics absorbance as observed for highly conductive polyaniline and confirms the occurrence of partially oxidized emeraldine form of polyaniline. The energy band gap of the polyaniline has been obtained as 2.52 eV, by analyzing the optical transmittance spectra. A rectifying behavior has been observed in the electrical J-V plot, which is of great significance in designing polymer based flexible electronic devices.

  3. Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control.

    Science.gov (United States)

    Lee, Sang-Won; Cha, Seung-Hwan; Choi, Kyung-Jae; Kang, Byoung-Ho; Lee, Jae-Sung; Kim, Sae-Wan; Kim, Ju-Seong; Jeong, Hyun-Min; Gopalan, Sai-Anand; Kwon, Dae-Hyuk; Kang, Shin-Won

    2016-01-07

    We propose a solution-processable ultraviolet (UV) photodetector with a pn-heterojunction hybrid photoactive layer (HPL) that is composed of poly-n-vinylcarbazole (PVK) as a p-type polymer and ZnO nanoparticles (NPs) as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL) spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 10³ higher than that of the dark current.

  4. Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

    Directory of Open Access Journals (Sweden)

    Sang-Won Lee

    2016-01-01

    Full Text Available We propose a solution-processable ultraviolet (UV photodetector with a pn-heterojunction hybrid photoactive layer (HPL that is composed of poly-n-vinylcarbazole (PVK as a p-type polymer and ZnO nanoparticles (NPs as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 103 higher than that of the dark current.

  5. High-performance tandem organic light-emitting diodes based on a buffer-modified p/n-type planar organic heterojunction as charge generation layer

    Science.gov (United States)

    Wu, Yukun; Sun, Ying; Qin, Houyun; Hu, Shoucheng; Wu, Qingyang; Zhao, Yi

    2017-04-01

    High-performance tandem organic light-emitting diodes (TOLEDs) were realized using a buffer-modified p/n-type planar organic heterojunction (OHJ) as charge generation layer (CGL) consisting of common organic materials, and the configuration of this p/n-type CGL was "LiF/N,N'-diphenyl-N,N'-bis(1-napthyl)-1,1'-biphenyl-4,4'-diamine (NPB)/4,7-diphenyl-1,10-phenanthroline (Bphen)/molybdenum oxide (MoOx)". The optimized TOLED exhibited a maximum current efficiency of 77.6 cd/A without any out-coupling techniques, and the efficiency roll-off was greatly improved compared to the single-unit OLED. The working mechanism of the p/n-type CGL was discussed in detail. It is found that the NPB/Bphen heterojunction generated enough charges under a forward applied voltage and the carrier extraction was a tunneling process. These results could provide a new method to fabricate high-performance TOLEDs.

  6. Device-independent bit commitment based on the CHSH inequality

    International Nuclear Information System (INIS)

    Aharon, N; Massar, S; Pironio, S; Silman, J

    2016-01-01

    Bit commitment and coin flipping occupy a unique place in the device-independent landscape, as the only device-independent protocols thus far suggested for these tasks are reliant on tripartite GHZ correlations. Indeed, we know of no other bipartite tasks, which admit a device-independent formulation, but which are not known to be implementable using only bipartite nonlocality. Another interesting feature of these protocols is that the pseudo-telepathic nature of GHZ correlations—in contrast to the generally statistical character of nonlocal correlations, such as those arising in the violation of the CHSH inequality—is essential to their formulation and analysis. In this work, we present a device-independent bit commitment protocol based on CHSH testing, which achieves the same security as the optimal GHZ-based protocol, albeit at the price of fixing the time at which Alice reveals her commitment. The protocol is analyzed in the most general settings, where the devices are used repeatedly and may have long-term quantum memory. We also recast the protocol in a post-quantum setting where both honest and dishonest parties are restricted only by the impossibility of signaling, and find that overall the supra-quantum structure allows for greater security. (paper)

  7. Proton irradiation effects on gallium nitride-based devices

    Science.gov (United States)

    Karmarkar, Aditya P.

    Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

  8. Mini array of quantum Hall devices based on epitaxial graphene

    International Nuclear Information System (INIS)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A.

    2016-01-01

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R H,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R H,2  = 2 h/e 2 was smaller than the relative standard uncertainty of the measurement (<1 × 10 −7 ) limited by the used resistance bridge.

  9. Numerical analysis of a polysilicon-based resistive memory device

    KAUST Repository

    Berco, Dan; Chand, Umesh

    2018-01-01

    This study investigates a conductive bridge resistive memory device based on a Cu top electrode, 10-nm polysilicon resistive switching layer and a TiN bottom electrode, by numerical analysis for $$10^{3}$$103 programming and erase simulation cycles

  10. Rapid development of paper-based fluidic diagnostic devices

    CSIR Research Space (South Africa)

    Smith, S

    2014-11-01

    Full Text Available We present a method for rapid and low-cost development of microfluidic diagnostic devices using paper-based techniques. Specifically, the implementation of fluidic flow paths and electronics on paper are demonstrated, with the goal of producing...

  11. Device with pivoting base for the storage of nuclear fuel

    International Nuclear Information System (INIS)

    Raymond, T.E.

    1978-01-01

    A storage rack for nuclear fuel assemblies comprising lower and upper bearers to support and hold fuel assemblies in their vertical position is described. The feature of this rack is the lower supporting device which comprises a pivoting base on which rests each fuel assembly, thereby enabling the fuel assembly not be subjected to any fatigue during storage [fr

  12. Broadband illusion optical devices based on conformal mappings

    Science.gov (United States)

    Xiong, Zhan; Xu, Lin; Xu, Ya-Dong; Chen, Huan-Yang

    2017-10-01

    In this paper, we propose a simple method of illusion optics based on conformal mappings. By carefully developing designs with specific conformal mappings, one can make an object look like another with a significantly different shape. In addition, the illusion optical devices can work in a broadband of frequencies.

  13. Microcomputer based test system for charge coupled devices

    International Nuclear Information System (INIS)

    Sidman, S.

    1981-02-01

    A microcomputer based system for testing analog charge coupled integrated circuits has been developed. It measures device performance for three parameters: dynamic range, baseline shift due to leakage current, and transfer efficiency. A companion board tester has also been developed. The software consists of a collection of BASIC and assembly language routines developed on the test system microcomputer

  14. In plane optical sensor based on organic electronic devices

    NARCIS (Netherlands)

    Koetse, M.M; Rensing, P.A.; Heck, G.T. van; Sharpe, R.B.A.; Allard, B.A.M.; Wieringa, F.P.; Kruijt, P.G.M.; Meulendijks, N.M.M.; Jansen, H.; Schoo, H.F.M.

    2008-01-01

    Sensors based on organic electronic devices are emerging in a wide range of application areas. Here we present a sensor platform using organic light emitting diodes (OLED) and organic photodiodes (OPD) as active components. By means of lamination and interconnection technology the functional foils

  15. Field-Based Experiential Learning Using Mobile Devices

    Science.gov (United States)

    Hilley, G. E.

    2015-12-01

    Technologies such as GPS and cellular triangulation allow location-specific content to be delivered by mobile devices, but no mechanism currently exists to associate content shared between locations in a way that guarantees the delivery of coherent and non-redundant information at every location. Thus, experiential learning via mobile devices must currently take place along a predefined path, as in the case of a self-guided tour. I developed a mobile-device-based system that allows a person to move through a space along a path of their choosing, while receiving information in a way that guarantees delivery of appropriate background and location-specific information without producing redundancy of content between locations. This is accomplished by coupling content to knowledge-concept tags that are noted as fulfilled when users take prescribed actions. Similarly, the presentation of the content is related to the fulfillment of these knowledge-concept tags through logic statements that control the presentation. Content delivery is triggered by mobile-device geolocation including GPS/cellular navigation, and sensing of low-power Bluetooth proximity beacons. Together, these features implement a process that guarantees a coherent, non-redundant educational experience throughout a space, regardless of a learner's chosen path. The app that runs on the mobile device works in tandem with a server-side database and file-serving system that can be configured through a web-based GUI, and so content creators can easily populate and configure content with the system. Once the database has been updated, the new content is immediately available to the mobile devices when they arrive at the location at which content is required. Such a system serves as a platform for the development of field-based geoscience educational experiences, in which students can organically learn about core concepts at particular locations while individually exploring a space.

  16. Multi-Device to Multi-Device (MD2MD Content-Centric Networking Based on Multi-RAT Device

    Directory of Open Access Journals (Sweden)

    Cheolhoon Kim

    2017-11-01

    Full Text Available This paper proposes a method whereby a device can transmit and receive information using a beacon, and also describes application scenarios for the proposed method. In a multi-device to multi-device (MD2MD content-centric networking (CCN environment, the main issue involves searching for and connecting to nearby devices. However, if a device can’t find another device that satisfies its requirements, the connection is delayed due to the repetition of processes. It is possible to rapidly connect to a device without repetition through the selection of the optimal device using the proposed method. Consequently, the proposed method and scenarios are advantageous in that they enable efficient content identification and delivery in a content-centric Internet of Things (IoT environment, in which multiple mobile devices coexist.

  17. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    OpenAIRE

    Terence K. S. Wong; Siarhei Zhuk; Saeid Masudy-Panah; Goutam K. Dalapati

    2016-01-01

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion e...

  18. Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

    Science.gov (United States)

    Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

    2013-12-23

    Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

  19. Electron and Hole Transport Layers: Their Use in Inverted Bulk Heterojunction Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Sandro Lattante

    2014-03-01

    Full Text Available Bulk heterojunction polymer solar cells (BHJ PSCs are very promising organic-based devices for low-cost solar energy conversion, compatible with roll-to-roll or general printing methods for mass production. Nevertheless, to date, many issues should still be addressed, one of these being the poor stability in ambient conditions. One elegant way to overcome such an issue is the so-called “inverted” BHJ PSC, a device geometry in which the charge collection is reverted in comparison with the standard geometry device, i.e., the electrons are collected by the bottom electrode and the holes by the top electrode (in contact with air. This reverted geometry allows one to use a high work function top metal electrode, like silver or gold (thus avoiding its fast oxidation and degradation, and eliminates the need of a polymeric hole transport layer, typically of an acidic nature, on top of the transparent metal oxide bottom electrode. Moreover, this geometry is fully compatible with standard roll-to-roll manufacturing in air and is less demanding for a good post-production encapsulation process. To date, the external power conversion efficiencies of the inverted devices are generally comparable to their standard analogues, once both the electron transport layer and the hole transport layer are fully optimized for the particular device. Here, the most recent results on this particular optimization process will be reviewed, and a general outlook regarding the inverted BHJ PSC will be depicted.

  20. Heterojunction PbS Nanocrystal Solar Cells with Oxide Charge-Transport Layers

    KAUST Repository

    Hyun, Byung-Ryool

    2013-12-23

    Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Roomerature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures. © 2013 American Chemical Society.

  1. Carbon-Nanotube-Based Thermoelectric Materials and Devices

    Energy Technology Data Exchange (ETDEWEB)

    Blackburn, Jeffrey L. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Ferguson, Andrew J. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Cho, Chungyeon [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA; Grunlan, Jaime C. [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA

    2018-01-22

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.

  2. Carbon-Nanotube-Based Thermoelectric Materials and Devices.

    Science.gov (United States)

    Blackburn, Jeffrey L; Ferguson, Andrew J; Cho, Chungyeon; Grunlan, Jaime C

    2018-03-01

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g -1 ) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Second Law based definition of passivity/activity of devices

    Science.gov (United States)

    Sundqvist, Kyle M.; Ferry, David K.; Kish, Laszlo B.

    2017-10-01

    Recently, our efforts to clarify the old question, if a memristor is a passive or active device [1], triggered debates between engineers, who have had advanced definitions of passivity/activity of devices, and physicists with significantly different views about this seemingly simple question. This debate triggered our efforts to test the well-known engineering concepts about passivity/activity in a deeper way, challenging them by statistical physics. It is shown that the advanced engineering definition of passivity/activity of devices is self-contradictory when a thermodynamical system executing Johnson-Nyquist noise is present. A new, statistical physical, self-consistent definition based on the Second Law of Thermodynamics is introduced. It is also shown that, in a system with uniform temperature distribution, any rectifier circuitry that can rectify thermal noise must contain an active circuit element, according to both the engineering and statistical physical definitions.

  4. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  5. New memory devices based on the proton transfer process

    International Nuclear Information System (INIS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. (paper)

  6. New memory devices based on the proton transfer process

    Science.gov (United States)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  7. Silicon nano crystal-based non-volatile memory devices

    International Nuclear Information System (INIS)

    Ng, C.Y.; Chen, T.P.; Sreeduth, D.; Chen, Q.; Ding, L.; Du, A.

    2006-01-01

    In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼ 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10 5 W/E cycles even at the high operation temperature of 85 deg. C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼ 0.3 V (or ∼ 20% of charge lose after 10 years) is achieved. However, ∼ 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide)

  8. Proton irradiation of liquid crystal based adaptive optical devices

    International Nuclear Information System (INIS)

    Buis, E.J.; Berkhout, G.C.G.; Love, G.D.; Kirby, A.K.; Taylor, J.M.; Hannemann, S.; Collon, M.J.

    2012-01-01

    To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10 10 p/cm 2 ). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

  9. Proton irradiation of liquid crystal based adaptive optical devices

    Energy Technology Data Exchange (ETDEWEB)

    Buis, E.J., E-mail: ernst-jan.buis@tno.nl [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Berkhout, G.C.G. [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden (Netherlands); Love, G.D.; Kirby, A.K.; Taylor, J.M. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Hannemann, S.; Collon, M.J. [cosine Research BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands)

    2012-01-01

    To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10{sup 10}p/cm{sup 2}). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

  10. Nanotechnology based devices and applications in medicine: An overview

    Directory of Open Access Journals (Sweden)

    Elvis A Martis

    2012-01-01

    Full Text Available Nanotechnology has been the most explored and extensively studied area in recent times. Many devices which were earlier impossible to imagine, are being developed at a lightning speed with the application of nanotechnology. To overcome the challenges offered by the most dreaded diseases, such as cancer or any disease involving the central nervous system or other inaccessible areas of the human body, nanotechnology has been proved to be a boon in making the treatment more target specific and minimizing the toxicities. This review describes a handful of important devices and applications based on nanotechnology in medicine made in recent times. This article also describes in brief the regulatory concerns and the ethical issues pertaining to nanomedical devices.

  11. An implantable thermoresponsive drug delivery system based on Peltier device.

    Science.gov (United States)

    Yang, Rongbing; Gorelov, Alexander V; Aldabbagh, Fawaz; Carroll, William M; Rochev, Yury

    2013-04-15

    Locally dropping the temperature in vivo is the main obstacle to the clinical use of a thermoresponsive drug delivery system. In this paper, a Peltier electronic element is incorporated with a thermoresponsive thin film based drug delivery system to form a new drug delivery device which can regulate the release of rhodamine B in a water environment at 37 °C. Various current signals are used to control the temperature of the cold side of the Peltier device and the volume of water on top of the Peltier device affects the change in temperature. The pulsatile on-demand release profile of the model drug is obtained by turning the current signal on and off. The work has shown that the 2600 mAh power source is enough to power this device for 1.3 h. Furthermore, the excessive heat will not cause thermal damage in the body as it will be dissipated by the thermoregulation of the human body. Therefore, this simple novel device can be implanted and should work well in vivo. Copyright © 2013 Elsevier B.V. All rights reserved.

  12. Optical sensor array platform based on polymer electronic devices

    Science.gov (United States)

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  13. Efficient inverted bulk-heterojunction polymer solar cells with self-assembled monolayer modified zinc oxide.

    Science.gov (United States)

    Kim, Wook Hyun; Lyu, Hong-Kun; Han, Yoon Soo; Woo, Sungho

    2013-10-01

    The performance of poly(3-hexylthiophen) (P3HT) and [6, 6]phenyl C61 butyric acid methyl ester ([60]PCBM)-based inverted bulk-heterojunction (BHJ) polymer solar cells (PSCs) is enhanced by the modification of zinc oxide (ZnO)/BHJ interface with carboxylic-acid-functionalized self-assembled monolayers (SAMs). Under simulated solar illumination of AM 1.5 (100 mW/cm2), the inverted devices fabricated with SAM-modified ZnO achieved an enhanced power conversion efficiency (PCE) of 3.34% due to the increased fill factor and photocurrent density as compared to unmodified cells with PCE of 2.60%. This result provides an efficient method for interface engineering in inverted BHJ PSCs.

  14. InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes

    Directory of Open Access Journals (Sweden)

    A. Pitanti

    2011-08-01

    Full Text Available Nanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III leads to a strong rectification effect when the current-voltage (I-V characteristic is inspected at room temperature. The additional insertion of a narrow InP barrier reduces the thermionic contribution, which results in a net decrease of leakage current in the reverse bias with a corresponding enhanced rectification in terms of asymmetry in the I-V characteristics. The investigated diodes compare favorably with the ones realized with p-n heterostructured nanowires, making InAs/InP/InSb devices appealing candidates to be used as building blocks for nanowire-based ultrafast electronics and for the realization of photodetectors in the THz spectral range.

  15. Orientation dependent band alignment for p-NiO/n-ZnO heterojunctions

    International Nuclear Information System (INIS)

    Ma, M. J.; Lu, B.; Zhou, T. T.; Ye, Z. Z.; Lu, J. G.; Pan, X. H.

    2013-01-01

    Nonpolor a-plane and polar c-plane ZnO thin films were prepared on r-plane sapphire and quartz substrates, respectively. The electronic structure of the interface between subsequently fabricated NiO/ZnO heterojunctions has been investigated by x-ray photoelectron spectroscopy measurements and the band offsets are determined together with information yielded from UV-vis transition spectra. It is found that a type-II band alignment forms at the interface for both the samples. The revealed ZnO-orientation dependent band offsets are analyzed and are attributed mainly due to the variations in internal electric field arose from spontaneous polarization effect. The accurate determination of the band alignment is important for the design and application of NiO/ZnO based hybrid devices.

  16. Orientation dependent band alignment for p-NiO/n-ZnO heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Ma, M. J.; Lu, B.; Zhou, T. T.; Ye, Z. Z.; Lu, J. G.; Pan, X. H. [State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2013-04-28

    Nonpolor a-plane and polar c-plane ZnO thin films were prepared on r-plane sapphire and quartz substrates, respectively. The electronic structure of the interface between subsequently fabricated NiO/ZnO heterojunctions has been investigated by x-ray photoelectron spectroscopy measurements and the band offsets are determined together with information yielded from UV-vis transition spectra. It is found that a type-II band alignment forms at the interface for both the samples. The revealed ZnO-orientation dependent band offsets are analyzed and are attributed mainly due to the variations in internal electric field arose from spontaneous polarization effect. The accurate determination of the band alignment is important for the design and application of NiO/ZnO based hybrid devices.

  17. Light programmable organic transistor memory device based on hybrid dielectric

    Science.gov (United States)

    Ren, Xiaochen; Chan, Paddy K. L.

    2013-09-01

    We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

  18. Electrostatically Gated Graphene-Zinc Oxide Nanowire Heterojunction.

    Science.gov (United States)

    You, Xueqiu; Pak, James Jungho

    2015-03-01

    This paper presents an electrostatically gated graphene-ZnO nanowire (NW) heterojunction for the purpose of device applications for the first time. A sub-nanometer-thick energy barrier width was formed between a monatomic graphene layer and electrochemically grown ZnO NWs. Because of the narrow energy barrier, electrons can tunnel through the barrier when a voltage is applied across the junction. A near-ohmic current-voltage (I-V) curve was obtained from the graphene-electrochemically grown ZnO NW heterojunction. This near-ohmic contact changed to asymmetric I-V Schottky contact when the samples were exposed to an oxygen environment. It is believed that the adsorbed oxygen atoms or molecules on the ZnO NW surface capture free electrons of the ZnO NWs, thereby creating a depletion region in the ZnO NWs. Consequentially, the electron concentration in the ZnO NWs is dramatically reduced, and the energy barrier width of the graphene-ZnO NW heterojunction increases greatly. This increased energy barrier width reduces the electron tunneling probability, resulting in a typical Schottky contact. By adjusting the back-gate voltage to control the graphene-ZnO NW Schottky energy barrier height, a large modulation on the junction current (on/off ratio of 10(3)) was achieved.

  19. Biomedical device prototype based on small scale hydrodynamic cavitation

    Directory of Open Access Journals (Sweden)

    Morteza Ghorbani

    2018-03-01

    Full Text Available This study presents a biomedical device prototype based on small scale hydrodynamic cavitation. The application of small scale hydrodynamic cavitation and its integration to a biomedical device prototype is offered as an important alternative to other techniques, such as ultrasound therapy, and thus constitutes a local, cheap, and energy-efficient solution, for urinary stone therapy and abnormal tissue ablation (e.g., benign prostate hyperplasia (BPH. The destructive nature of bubbly, cavitating, flows was exploited, and the potential of the prototype was assessed and characterized. Bubbles generated in a small flow restrictive element (micro-orifice based on hydrodynamic cavitation were utilized for this purpose. The small bubbly, cavitating, flow generator (micro-orifice was fitted to a small flexible probe, which was actuated with a micromanipulator using fine control. This probe also houses an imaging device for visualization so that the emerging cavitating flow could be locally targeted to the desired spot. In this study, the feasibility of this alternative treatment method and its integration to a device prototype were successfully accomplished.

  20. Biomedical device prototype based on small scale hydrodynamic cavitation

    Science.gov (United States)

    Ghorbani, Morteza; Sozer, Canberk; Alcan, Gokhan; Unel, Mustafa; Ekici, Sinan; Uvet, Huseyin; Koşar, Ali

    2018-03-01

    This study presents a biomedical device prototype based on small scale hydrodynamic cavitation. The application of small scale hydrodynamic cavitation and its integration to a biomedical device prototype is offered as an important alternative to other techniques, such as ultrasound therapy, and thus constitutes a local, cheap, and energy-efficient solution, for urinary stone therapy and abnormal tissue ablation (e.g., benign prostate hyperplasia (BPH)). The destructive nature of bubbly, cavitating, flows was exploited, and the potential of the prototype was assessed and characterized. Bubbles generated in a small flow restrictive element (micro-orifice) based on hydrodynamic cavitation were utilized for this purpose. The small bubbly, cavitating, flow generator (micro-orifice) was fitted to a small flexible probe, which was actuated with a micromanipulator using fine control. This probe also houses an imaging device for visualization so that the emerging cavitating flow could be locally targeted to the desired spot. In this study, the feasibility of this alternative treatment method and its integration to a device prototype were successfully accomplished.

  1. A new JPEG-based steganographic algorithm for mobile devices

    Science.gov (United States)

    Agaian, Sos S.; Cherukuri, Ravindranath C.; Schneider, Erik C.; White, Gregory B.

    2006-05-01

    Currently, cellular phones constitute a significant portion of the global telecommunications market. Modern cellular phones offer sophisticated features such as Internet access, on-board cameras, and expandable memory which provide these devices with excellent multimedia capabilities. Because of the high volume of cellular traffic, as well as the ability of these devices to transmit nearly all forms of data. The need for an increased level of security in wireless communications is becoming a growing concern. Steganography could provide a solution to this important problem. In this article, we present a new algorithm for JPEG-compressed images which is applicable to mobile platforms. This algorithm embeds sensitive information into quantized discrete cosine transform coefficients obtained from the cover JPEG. These coefficients are rearranged based on certain statistical properties and the inherent processing and memory constraints of mobile devices. Based on the energy variation and block characteristics of the cover image, the sensitive data is hidden by using a switching embedding technique proposed in this article. The proposed system offers high capacity while simultaneously withstanding visual and statistical attacks. Based on simulation results, the proposed method demonstrates an improved retention of first-order statistics when compared to existing JPEG-based steganographic algorithms, while maintaining a capacity which is comparable to F5 for certain cover images.

  2. Novel Opportunistic Network Routing Based on Social Rank for Device-to-Device Communication

    Directory of Open Access Journals (Sweden)

    Tong Wang

    2017-01-01

    Full Text Available In recent years, there has been dramatic proliferation of research concerned with fifth-generation (5G mobile communication networks, among which device-to-device (D2D communication is one of the key technologies. Due to the intermittent connection of nodes, the D2D network topology may be disconnected frequently, which will lead to failure in transmission of large data files. In opportunistic networks, in case of encountering nodes which never meet before a flood message blindly to cause tremendous network overhead, a novel opportunistic network routing protocol based on social rank and intermeeting time (SRIT is proposed in this paper. An improved utility approach applied in utility replication based on encounter durations and intermeeting time is put forward to enhance the routing efficiency. Meanwhile, in order to select better candidate nodes in the network, a social graph among people is established when they socially relate to each other in social rank replication. The results under the scenario show an advantage of the proposed opportunistic network routing based on social rank and intermeeting time (SRIT over the compared algorithms in terms of delivery ratio, average delivery latency, and overhead ratio.

  3. Electrochromic device based on electrospun WO{sub 3} nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Dulgerbaki, Cigdem; Maslakci, Neslihan Nohut; Komur, Ali Ihsan; Oksuz, Aysegul Uygun, E-mail: ayseguluygun@sdu.edu.tr

    2015-12-15

    Highlights: • WO{sub 3} electrochromic nanofibers were prepared by electrospinning technique. • WO{sub 3} nanofibers switched reversibly from transparent to blue color. • Electrochromic device was assembled using ionic liquid based gel electrolyte. • Significant optical modulation and excellent cycling stability were achieved for ECD. - Abstract: The tungsten oxide (WO{sub 3}) nanofibers were grown directly onto an ITO-coated glass via an electrospinning method for electrochromic applications. The electrochromic properties of WO{sub 3} nanofibers were investigated in the presence of different electrolytes including a series of ionic liquids and classic LiClO{sub 4}-PC system. A significant optical modulation of 20.82% at 760 nm, reversible coloration with efficiency of 64.58 cm{sup 2}/C and excellent cycling stability were achieved for the nanofiber electrochromic device (ECD) with ionic liquid based gel electrolyte.

  4. Chemically modified graphene based supercapacitors for flexible and miniature devices

    Science.gov (United States)

    Ghosh, Debasis; Kim, Sang Ouk

    2015-09-01

    Rapid progress in the portable and flexible electronic devises has stimulated supercapacitor research towards the design and fabrication of high performance flexible devices. Recent research efforts for flexible supercapacitor electrode materials are highly focusing on graphene and chemically modified graphene owing to the unique properties, including large surface area, high electrical and thermal conductivity, excellent mechanical flexibility, and outstanding chemical stability. This invited review article highlights current status of the flexible electrode material research based on chemically modified graphene for supercapacitor application. A variety of electrode architectures prepared from chemically modified graphene are summarized in terms of their structural dimensions. Novel prototypes for the supercapacitor aiming at flexible miniature devices, i.e. microsupercapacitor with high energy and power density are highlighted. Future challenges relevant to graphene-based flexible supercapacitors are also suggested. [Figure not available: see fulltext.

  5. Protein sequencing via nanopore based devices: a nanofluidics perspective

    Science.gov (United States)

    Chinappi, Mauro; Cecconi, Fabio

    2018-05-01

    Proteins perform a huge number of central functions in living organisms, thus all the new techniques allowing their precise, fast and accurate characterization at single-molecule level certainly represent a burst in proteomics with important biomedical impact. In this review, we describe the recent progresses in the developing of nanopore based devices for protein sequencing. We start with a critical analysis of the main technical requirements for nanopore protein sequencing, summarizing some ideas and methodologies that have recently appeared in the literature. In the last sections, we focus on the physical modelling of the transport phenomena occurring in nanopore based devices. The multiscale nature of the problem is discussed and, in this respect, some of the main possible computational approaches are illustrated.

  6. The Biological Responses to Magnesium-Based Biodegradable Medical Devices

    Directory of Open Access Journals (Sweden)

    Lumei Liu

    2017-11-01

    Full Text Available The biocompatibility of Magnesium-based materials (MBMs is critical to the safety of biodegradable medical devices. As a promising metallic biomaterial for medical devices, the issue of greatest concern is devices’ safety as degrading products are possibly interacting with local tissue during complete degradation. The aim of this review is to summarize the biological responses to MBMs at the cellular/molecular level, including cell adhesion, transportation signaling, immune response, and tissue growth during the complex degradation process. We review the influence of MBMs on gene/protein biosynthesis and expression at the site of implantation, as well as throughout the body. This paper provides a systematic review of the cellular/molecular behavior of local tissue on the response to Mg degradation, which may facilitate a better prediction of long-term degradation and the safe use of magnesium-based implants through metal innovation.

  7. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    Science.gov (United States)

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  8. Network-based Fingerprint Authentication System Using a Mobile Device

    OpenAIRE

    Zhang, Qihu

    2016-01-01

    Abstract— Fingerprint-based user authentication is highly effective in networked services such as electronic payment, but conventional authentication solutions have problems in cost, usability and security. To resolve these problems, we propose a touch-less fingerprint authentication solution, in which a mobile device's built-in camera is used to capture fingerprint image, and then it is sent to the server to determine the identity of the user. We designed and implemented a prototype as an a...

  9. The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Baturay, Silan [Department of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir (Turkey); Ocak, Yusuf Selim, E-mail: yusufselim@gmail.com [Department of Science, Faculty of Education, Dicle University, 21280 Diyarbakir (Turkey); Science and Technology Application and Research Center, Dicle University, 21280 Diyarbakir (Turkey); Kaya, Derya [Department of Physics, Institute of Natural Applied Sciences, Dicle University, 21280 Diyarbakir (Turkey)

    2015-10-05

    Highlights: • Undoped and Gd doped ZnO thin films were deposited onto p-Si semiconductor. • The Gd:ZnO/p-Si heterojunctions were compared with undoped ZnO/p-Si heterojunction. • A strong effect of Gd doping on the performance of the devices were reported. - Abstract: Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I–V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light.

  10. Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy.

    Science.gov (United States)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun; Yang, Yuzhen; Yu, Yang; Wen, Kaile

    2017-12-01

    Pure aluminum oxide (Al 2 O 3 ) and zinc aluminum oxide (Zn x Al 1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al 1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (ΔE V ) and conduction band offset (ΔE C ) for the interface of the Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction have been constructed. An accurate value of ΔE V  = 0.82 ± 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al 2 O 3 thickness. Given the experimental E g of 6.8 eV for Al 2 O 3 and 5.29 eV for Zn 0.8 Al 0.2 O, a type-I heterojunction with a ΔE C of 0.69 ± 0.12 eV was found. The precise determination of the band alignment of Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.

  11. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

    Energy Technology Data Exchange (ETDEWEB)

    Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain [CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland); Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland)

    2015-08-24

    Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

  12. Characteristics of heterojunctions of amorphous LaAlO2.73 on Si

    International Nuclear Information System (INIS)

    Huang Yanhong; Zhao Kun; Lu Huibin; Jin Kuijuan; He Meng; Chen Zhenghao; Zhou Yueliang; Yang Guozhen

    2006-01-01

    High-quality heterojunctions consisting of n-type amorphous LaAlO 3- δ and p-type Si without Si interfacial layer were prepared using a thin film deposition system normally used for laser-molecular beam epitaxy. Good I-V rectifying property, ferroelectricity of interface enhancement and fast photovoltaic effect have been observed in the LaAlO 3- δ /Si p-n heterojunctions. We expect that the multifunctional properties of rectification, ferroelectricity and photovoltaic effect should open up new possibilities in device development and other applications

  13. Schottky diodes between Bi2S3 nanorods and metal nanoparticles in a polymer matrix as hybrid bulk-heterojunction solar cells

    International Nuclear Information System (INIS)

    Saha, Sudip K.; Pal, Amlan J.

    2015-01-01

    We report the use of metal-semiconductor Schottky junctions in a conjugated polymer matrix as solar cells. The Schottky diodes, which were formed between Bi 2 S 3 nanorods and gold nanoparticles, efficiently dissociated photogenerated excitons. The bulk-heterojunction (BHJ) devices based on such metal-semiconductor Schottky diodes in a polymer matrix therefore acted as an efficient solar cell as compared to the devices based on only the semiconductor nanorods in the polymer matrix or when gold nanoparticles were added separately to the BHJs. In the latter device, gold nanoparticles offered plasmonic enhancement due to an increased cross-section of optical absorption. We report growth and characteristics of the Schottky junctions formed through an intimate contact between Bi 2 S 3 nanorods and gold nanoparticles. We also report fabrication and characterization of BHJ solar cells based on such heterojunctions. We highlight the benefit of using metal-semiconductor Schottky diodes over only inorganic semiconductor nanorods or quantum dots in a polymer matrix in forming hybrid BHJ solar cells

  14. An UV photochromic memory effect in proton-based WO3 electrochromic devices

    International Nuclear Information System (INIS)

    Zhang Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-01-01

    We report an UV photochromic memory effect on a standard proton-based WO 3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices

  15. An UV photochromic memory effect in proton-based WO3 electrochromic devices

    Science.gov (United States)

    Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-11-01

    We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  16. A cloud-based multimodality case file for mobile devices.

    Science.gov (United States)

    Balkman, Jason D; Loehfelm, Thomas W

    2014-01-01

    Recent improvements in Web and mobile technology, along with the widespread use of handheld devices in radiology education, provide unique opportunities for creating scalable, universally accessible, portable image-rich radiology case files. A cloud database and a Web-based application for radiologic images were developed to create a mobile case file with reasonable usability, download performance, and image quality for teaching purposes. A total of 75 radiology cases related to breast, thoracic, gastrointestinal, musculoskeletal, and neuroimaging subspecialties were included in the database. Breast imaging cases are the focus of this article, as they best demonstrate handheld display capabilities across a wide variety of modalities. This case subset also illustrates methods for adapting radiologic content to cloud platforms and mobile devices. Readers will gain practical knowledge about storage and retrieval of cloud-based imaging data, an awareness of techniques used to adapt scrollable and high-resolution imaging content for the Web, and an appreciation for optimizing images for handheld devices. The evaluation of this software demonstrates the feasibility of adapting images from most imaging modalities to mobile devices, even in cases of full-field digital mammograms, where high resolution is required to represent subtle pathologic features. The cloud platform allows cases to be added and modified in real time by using only a standard Web browser with no application-specific software. Challenges remain in developing efficient ways to generate, modify, and upload radiologic and supplementary teaching content to this cloud-based platform. Online supplemental material is available for this article. ©RSNA, 2014.

  17. Bulk-Heterojunction Organic Solar Cells: Five Core Technologies for Their Commercialization.

    Science.gov (United States)

    Kang, Hongkyu; Kim, Geunjin; Kim, Junghwan; Kwon, Sooncheol; Kim, Heejoo; Lee, Kwanghee

    2016-09-01

    The past two decades of vigorous interdisciplinary approaches has seen tremendous breakthroughs in both scientific and technological developments of bulk-heterojunction organic solar cells (OSCs) based on nanocomposites of π-conjugated organic semiconductors. Because of their unique functionalities, the OSC field is expected to enable innovative photovoltaic applications that can be difficult to achieve using traditional inorganic solar cells: OSCs are printable, portable, wearable, disposable, biocompatible, and attachable to curved surfaces. The ultimate objective of this field is to develop cost-effective, stable, and high-performance photovoltaic modules fabricated on large-area flexible plastic substrates via high-volume/throughput roll-to-roll printing processing and thus achieve the practical implementation of OSCs. Recently, intensive research efforts into the development of organic materials, processing techniques, interface engineering, and device architectures have led to a remarkable improvement in power conversion efficiencies, exceeding 11%, which has finally brought OSCs close to commercialization. Current research interests are expanding from academic to industrial viewpoints to improve device stability and compatibility with large-scale printing processes, which must be addressed to realize viable applications. Here, both academic and industrial issues are reviewed by highlighting historically monumental research results and recent state-of-the-art progress in OSCs. Moreover, perspectives on five core technologies that affect the realization of the practical use of OSCs are presented, including device efficiency, device stability, flexible and transparent electrodes, module designs, and printing techniques. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Research on SOI-based micro-resonator devices

    Science.gov (United States)

    Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

    2010-10-01

    SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of 10 Gbit/s high speed microring modulators.

  19. Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer

    International Nuclear Information System (INIS)

    Pan Feng; Qian Xian-Rui; Huang Li-Zhen; Wang Hai-Bo; Yan Dong-Hang

    2011-01-01

    High-mobility vanadyl phthalocyanine (VOPc)/5,5‴-bis(4-fluorophenyl)-2,2':5',2″:5″,2‴-quaterthiophene (F2-P4T) thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine (F 16 CuPc)/copper phthalocyanine (CuPc) heterojunction unit, which are fabricated at different substrate temperatures, as a buffer layer. The highest mobility of 4.08cm 2 /Vs is achieved using a F 16 CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature. Compared with the random small grain-like morphology of the room-temperature buffer layer, the high-temperature organic heterojunction presents a large-sized fiber-like film morphology, resulting in an enhanced conductivity. Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained. (cross-disciplinary physics and related areas of science and technology)

  20. Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene

    Science.gov (United States)

    Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo

    2017-06-01

    The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.

  1. Epitaxial Growth of an Organic p-n Heterojunction: C60 on Single-Crystal Pentacene.

    Science.gov (United States)

    Nakayama, Yasuo; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Tsuruta, Ryohei; Hinderhofer, Alexander; Gerlach, Alexander; Broch, Katharina; Belova, Valentina; Frank, Heiko; Yamamoto, Masayuki; Niederhausen, Jens; Glowatzki, Hendrik; Rabe, Jürgen P; Koch, Norbert; Ishii, Hisao; Schreiber, Frank; Ueno, Nobuo

    2016-06-01

    Designing molecular p-n heterojunction structures, i.e., electron donor-acceptor contacts, is one of the central challenges for further development of organic electronic devices. In the present study, a well-defined p-n heterojunction of two representative molecular semiconductors, pentacene and C60, formed on the single-crystal surface of pentacene is precisely investigated in terms of its growth behavior and crystallographic structure. C60 assembles into a (111)-oriented face-centered-cubic crystal structure with a specific epitaxial orientation on the (001) surface of the pentacene single crystal. The present experimental findings provide molecular scale insights into the formation mechanisms of the organic p-n heterojunction through an accurate structural analysis of the single-crystalline molecular contact.

  2. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    International Nuclear Information System (INIS)

    Chang, P. C.; Baca, A. G.; Li, N. Y.; Xie, X. M.; Hou, H. Q.; Armour, E.

    2000-01-01

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In 0.03 Ga 0.97 As 0.99 N 0.01 /GaAs DHBT has a low V ON of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In 0.03 Ga 0.97 As 0.99 N 0.01 base layer. GaAs is used for the collector; thus the breakdown voltage (BV CEO ) is 10 V, consistent with the BV CEO of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with δ doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics

  3. A miniaturized silicon based device for nucleic acids electrochemical detection

    Directory of Open Access Journals (Sweden)

    Salvatore Petralia

    2015-12-01

    Full Text Available In this paper we describe a novel portable system for nucleic acids electrochemical detection. The core of the system is a miniaturized silicon chip composed by planar microelectrodes. The chip is embedded on PCB board for the electrical driving and reading. The counter, reference and work microelectrodes are manufactured using the VLSI technology, the material is gold for reference and counter electrodes and platinum for working electrode. The device contains also a resistor to control and measuring the temperature for PCR thermal cycling. The reaction chamber has a total volume of 20 μL. It is made in hybrid silicon–plastic technology. Each device contains four independent electrochemical cells.Results show HBV Hepatitis-B virus detection using an unspecific DNA intercalating redox probe based on metal–organic compounds. The recognition event is sensitively detected by square wave voltammetry monitoring the redox signals of the intercalator that strongly binds to the double-stranded DNA. Two approaches were here evaluated: (a intercalation of electrochemical unspecific probe on ds-DNA on homogeneous solution (homogeneous phase; (b grafting of DNA probes on electrode surface (solid phase.The system and the method here reported offer better advantages in term of analytical performances compared to the standard commercial optical-based real-time PCR systems, with the additional incomes of being potentially cheaper and easier to integrate in a miniaturized device. Keywords: Electrochemical detection, Real time PCR, Unspecific DNA intercalator

  4. Photonic devices based on black phosphorus and related hybrid materials

    International Nuclear Information System (INIS)

    Vitiello, M.S.; Viti, L.

    2016-01-01

    Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective means for the manipulation and control of carriers, from the visible to the far-infrared, leading to the development of highly efficient devices like sources, detectors and modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them, black phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be specifically engineered to comply with different applications, like transparent saturable absorbers, fast photocounductive switches and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black-phosphorus–based THz photonics and discuss future perspectives of this rapidly developing research field.

  5. Analysis of Android Device-Based Solutions for Fall Detection

    Directory of Open Access Journals (Sweden)

    Eduardo Casilari

    2015-07-01

    Full Text Available Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources to fall detection solutions.

  6. Analysis of Android Device-Based Solutions for Fall Detection.

    Science.gov (United States)

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-07-23

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions.

  7. Analysis of Android Device-Based Solutions for Fall Detection

    Science.gov (United States)

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-01-01

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions. PMID:26213928

  8. Analytical Devices Based on Direct Synthesis of DNA on Paper.

    Science.gov (United States)

    Glavan, Ana C; Niu, Jia; Chen, Zhen; Güder, Firat; Cheng, Chao-Min; Liu, David; Whitesides, George M

    2016-01-05

    This paper addresses a growing need in clinical diagnostics for parallel, multiplex analysis of biomarkers from small biological samples. It describes a new procedure for assembling arrays of ssDNA and proteins on paper. This method starts with the synthesis of DNA oligonucleotides covalently linked to paper and proceeds to assemble microzones of DNA-conjugated paper into arrays capable of simultaneously capturing DNA, DNA-conjugated protein antigens, and DNA-conjugated antibodies. The synthesis of ssDNA oligonucleotides on paper is convenient and effective with 32% of the oligonucleotides cleaved and eluted from the paper substrate being full-length by HPLC for a 32-mer. These ssDNA arrays can be used to detect fluorophore-linked DNA oligonucleotides in solution, and as the basis for DNA-directed assembly of arrays of DNA-conjugated capture antibodies on paper, detect protein antigens by sandwich ELISAs. Paper-anchored ssDNA arrays with different sequences can be used to assemble paper-based devices capable of detecting DNA and antibodies in the same device and enable simple microfluidic paper-based devices.

  9. Electrical properties of InP/InGaAs heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ouacha, A.

    1993-01-01

    In recent years, there has been considerable interest in indium phosphide (InP) and In-based III-V compounds because of their applications in many electronic and photonic devices. The issues involved in processing high quality InP-based devices have been widely explored during the last decade. Realization of highly reliable, high speed, and long distance fiber-optics communication systems requires good quality of the material growth, characterization techniques and reproducible device processing concepts. All these three elements should be included in the manufacturing sequence in order to produce devices of high quality. Until recently, most of the InP related technologies and advances have been focused around optical fiber communications (1.3-1.55 μm) where Si and GaAs could not compete. The main obstacle to rapid growth of InP based technology in the 80s was the enormous investment and interest of large companies and commercial research organizations in GaAs technology. Supporting and financing InP related devices and material was at best minimal. As a consequence, there has been a much slower perhaps more realistic development curve for non-optical InP-based devices and technologies. InP technology has survived solely on the basic of its technical performance, despite the financial problems. In this thesis, we investigate the static behaviour of InP/InGaAs heterojunction bipolar transistors (HBTs) which have attracted a significant amount of attention. (20 refs., 5 figs., 3 tabs.)

  10. Numerical analysis of a polysilicon-based resistive memory device

    KAUST Repository

    Berco, Dan

    2018-03-08

    This study investigates a conductive bridge resistive memory device based on a Cu top electrode, 10-nm polysilicon resistive switching layer and a TiN bottom electrode, by numerical analysis for $$10^{3}$$103 programming and erase simulation cycles. The low and high resistive state values in each cycle are calculated, and the analysis shows that the structure has excellent retention reliability properties. The presented Cu species density plot indicates that Cu insertion occurs almost exclusively along grain boundaries resulting in a confined isomorphic conductive filament that maintains its overall shape and electric properties during cycling. The superior reliability of this structure may thus be attributed to the relatively low amount of Cu migrating into the RSL during initial formation. In addition, the results show a good match and help to confirm experimental measurements done over a previously demonstrated device.

  11. Graphene-based devices in terahertz science and technology

    International Nuclear Information System (INIS)

    Otsuji, T; Boubanga Tombet, S A; Satou, A; Fukidome, H; Suemitsu, M; Ryzhii, V; Sano, E; Popov, V; Ryzhii, M

    2012-01-01

    Graphene is a one-atom-thick planar sheet of a honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to nontrivial features such as giant carrier mobility and broadband flat optical response. In this paper, recent advances in graphene-based devices in terahertz science and technology are reviewed. First, the fundamental basis of the optoelectronic properties of graphene is introduced. Second, synthesis and crystallographic characterization of graphene material are described, particularly focused on the authors' original heteroepitaxial graphene-on-silicon technology. Third, nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene are described to introduce a possibility of negative-dynamic conductivity in a wide terahertz range. Fourth, recent theoretical advances towards the creation of current-injection graphene terahertz lasers are described. Fifth, the unique terahertz dynamics of the two-dimensional plasmons in graphene are described. Finally, the advantages of graphene devices for terahertz applications are summarized. (topical review)

  12. Accelerated life testing and temperature dependence of device characteristics in GaAs CHFET devices

    Science.gov (United States)

    Gallegos, M.; Leon, R.; Vu, D. T.; Okuno, J.; Johnson, A. S.

    2002-01-01

    Accelerated life testing of GaAs complementary heterojunction field effect transistors (CHFET) was carried out. Temperature dependence of single and synchronous rectifier CHFET device characteristics were also obtained.

  13. Physically-based modelling of polycrystalline semiconductor devices

    International Nuclear Information System (INIS)

    Lee, S.

    2000-01-01

    Thin-film technology using polycrystalline semiconductors has been widely applied to active-matrix-addressed liquid crystal displays (AMLCDs) where thin-film transistors act as digital pixel switches. Research and development is in progress to integrate the driver circuits around the peripheral of the display, resulting in significant cost reduction of connections between rows and columns and the peripheral circuitry. For this latter application, where for instance it is important to control the greyscale voltage level delivered to the pixel, an understanding of device behaviour is required so that models can be developed for analogue circuit simulation. For this purpose, various analytical models have been developed based on that of Seto who considered the effect of monoenergetic trap states and grain boundaries in polycrystalline materials but not the contribution of the grains to the electrical properties. The principal aim of this thesis is to describe the use of a numerical device simulator (ATLAS) as a tool to investigate the physics of the trapping process involved in the device operation, which additionally takes into account the effect of multienergetic trapping levels and the contribution of the grain into the modelling. A study of the conventional analytical models is presented, and an alternative approach is introduced which takes into account the grain regions to enhance the accuracy of the analytical modelling. A physically-based discrete-grain-boundary model and characterisation method are introduced to study the effects of the multienergetic trap states on the electrical characteristics of poly-TFTs using CdSe devices as the experimental example, and the electrical parameters such as the density distribution of the trapping states are extracted. The results show excellent agreement between the simulation and experimental data. The limitations of this proposed physical model are also studied and discussed. (author)

  14. An electromagnetic inerter-based vibration suppression device

    International Nuclear Information System (INIS)

    Gonzalez-Buelga, A; Clare, L R; Neild, S A; Jiang, J Z; Inman, D J

    2015-01-01

    This paper describes how an inerter-based device for structural vibration suppression can be realized using an electromagnetic transducer such as a linear motor. When the motor shaft moves, a difference of voltage is generated across the transducer coil. The voltage difference is proportional to the relative velocity between its two terminals. The electromagnetic transducer will exert a force proportional to current following the Lorentz principle if the circuit is closed around the transducer coil. If an electronic circuit consisting of a capacitor, an inductance and a resistance with the appropriate configuration is connected, the resulting force reflected back into the mechanical domain is equivalent to that achieved by a mechanical inerter-based device. The proposed configuration is easy to implement and very versatile, provided a high quality conversion system with negligible losses. With the use of electromagnetic devices, a new generation of vibration absorbers can be realized, for example in the electrical domain it would be relatively uncomplicated to synthesize multi-frequency or real time tunable vibration absorbers by adding electrical components in parallel. In addition by using resistance emulators in the electrical circuits, part of the absorbed vibration energy can be converted into usable power. Here an electromagnetic tuned inerter damper (E-TID) is tested experimentally using real time dynamic substructuring. A voltage compensation unit was developed in order to compensate for coil losses. This voltage compensation unit requires power, which is acquired through harvesting from the vibration energy using a resistance emulator. A power balance analysis was developed in order to ensure the device can be self sufficient. Promising experimental results, using this approach, have been obtained and are presented in this paper. The ultimate goal of this research is the development of autonomous electromagnetic vibration absorbers, able to harvest energy

  15. Detailed balance theory of excitonic and bulk heterojunction solar cells

    Science.gov (United States)

    Kirchartz, Thomas; Mattheis, Julian; Rau, Uwe

    2008-12-01

    A generalized solar cell model for excitonic and classical bipolar solar cells describes the combined transport and interaction of electrons, holes, and excitons in accordance with the principle of detailed balance. Conventional inorganic solar cells, single-phase organic solar cells and bulk heterojunction solar cells, i.e., nanoscale mixtures of two organic materials, are special cases of this model. For high mobilities, the compatibility with the principle of detailed balance ensures that our model reproduces the Shockley-Queisser limit irrespective of how the energy transport is achieved. For less ideal devices distinct differences become visible between devices that are described by linear differential equations and those with nonlinear effects, such as a voltage-dependent collection in bipolar p-i-n -type devices. These differences in current-voltage characteristics are also decisive for the validity of the reciprocity theorem between photovoltaic quantum efficiency and electroluminescent emission. Finally, we discuss the effect of band offset at the heterointerface in a bulk heterojunction cell and the effect of the average distances between these heterointerfaces on the performance of a solar cell in order to show how our detailed balance model includes also these empirically important quantities.

  16. Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor.

    Science.gov (United States)

    Mills, Edmund M; Min, Bok Ki; Kim, Seong K; Kim, Seong Jun; Kang, Min-A; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok; Jung, Jongwan; Kim, Sangtae

    2015-08-26

    Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions. Direct characterization of the current-voltage-temperature relationship of the heterojunctions by ac-impedance spectroscopy reveals that this relationship is controlled predominantly by field emission, unlike most graphene barristors in which thermionic emission is observed. This governing mechanism makes the device unique among graphene barristors, while also having the advantages of simple fabrication and outstanding performance.

  17. Electrospinning direct preparation of SnO2/Fe2O3 heterojunction nanotubes as an efficient visible-light photocatalyst

    International Nuclear Information System (INIS)

    Zhu, Chengquan; Li, Yuren; Su, Qing; Lu, Bingan; Pan, Jiaqi; Zhang, Jiawang; Xie, Erqing; Lan, Wei

    2013-01-01

    Highlights: •SnO 2 /Fe 2 O 3 nano-heterojunction-tubes are prepared by a facile electrospinning technique. •The formation mechanism of heterojunction tubes is proposed for self-polymer-templates action. •SnO 2 /Fe 2 O 3 nano-heterojunction-tubes show high photocatalytic activity under visible light irradiation. •The reasons for the high photocatalytic activity are investigated in detail. -- Abstract: Herein SnO 2 /Fe 2 O 3 heterojunction nanotubes are prepared by a facile electrospinning technique. The heterojunction nanotubes with a diameter of about 200 nm uniformly distribute SnO 2 and Fe 2 O 3 nanocrystals and present the obvious interfaces between them, which form perfect SnO 2 /Fe 2 O 3 nano-heterojunctions. A possible mechanism based on self-polymer-templates is proposed to explain the formation of SnO 2 /Fe 2 O 3 heterojunction nanotubes. The heterojunction nanotubes show high photocatalytic activity for the degradation of RhB dye under visible light irradiation. The prepared SnO 2 /Fe 2 O 3 heterojunction nanotubes can also be applied to other fields such as sensor, lithium-ion batteries

  18. Gas Sensing Studies of an n-n Hetero-Junction Array Based on SnO2 and ZnO Composites

    Directory of Open Access Journals (Sweden)

    Anupriya Naik

    2016-02-01

    Full Text Available A composite metal oxide semiconductor (MOS sensor array based on tin dioxide (SNO2 and zinc oxide (ZnO has been fabricated using a straight forward mechanical mixing method. The array was characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, Raman spectroscopy and X-ray diffraction. The array was evaluated against a number of environmentally important reducing and oxidizing gases across a range of operating temperatures (300–500 °C. The highest response achieved was against 100 ppm ethanol by the 50 wt% ZnO–50 wt% SnO2 device, which exhibited a response of 109.1, a 4.5-fold increase with respect to the pure SnO2 counterpart (which displayed a response of 24.4 and a 12.3-fold enhancement with respect to the pure ZnO counterpart (which was associated with a response of 8.9, towards the same concentration of the analyte. Cross sensitivity studies were also carried out against a variety of reducing gases at an operating temperature of 300 °C. The sensors array showed selectivity towards ethanol. The enhanced behaviour of the mixed oxide materials was influenced by junction effects, composition, the packing structure and the device microstructure. The results show that it is possible to tune the sensitivity and selectivity of a composite sensor, through a simple change in the composition of the composite.

  19. MEMS- and NEMS-based smart devices and systems

    Science.gov (United States)

    Varadan, Vijay K.

    2001-11-01

    structures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5-40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended conventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross- linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

  20. Charge-carrier selective electrodes for organic bulk heterojunction solar cell by contact-printed siloxane oligomers

    International Nuclear Information System (INIS)

    Hwang, Hyun-Sik; Khang, Dahl-Young

    2015-01-01

    ‘Smart’ (or selective) electrode for charge carriers, both electrons and holes, in organic bulk-heterojunction (BHJ) solar cells using insertion layers made of hydrophobically-recovered and contact-printed siloxane oligomers between electrodes and active material has been demonstrated. The siloxane oligomer insertion layer has been formed at a given interface simply by conformally-contacting a cured slab of polydimethylsiloxane stamp for less than 100 s. All the devices, either siloxane oligomer printed at one interface only or printed at both interfaces, showed efficiency enhancement when compared to non-printed ones. The possible mechanism that is responsible for the observed efficiency enhancement has been discussed based on the point of optimum symmetry and photocurrent analysis. Besides its simplicity and large-area applicability, the demonstrated contact-printing technique does not involve any vacuum or wet processing steps and thus can be very useful for the roll-based, continuous production scheme for organic BHJ solar cells. - Highlights: • Carrier-selective insertion layer in organic bulk heterojunction solar cells • Simple contact-printing of siloxane oligomers improves cell efficiency. • Printed siloxane layer reduces carrier recombination at electrode surfaces. • Siloxane insertion layer works equally well at both electrode surfaces. • Patterned PDMS stamp shortens the printing time within 100 s

  1. Performance of planar heterojunction perovskite solar cells under light concentration

    Directory of Open Access Journals (Sweden)

    Aaesha Alnuaimi

    2016-11-01

    Full Text Available In this work, we present 2D simulation of planar heterojunction perovskite solar cells under high concentration using physics-based TCAD. The performance of planar perovskite heterojunction solar cells is examined up to 1000 suns. We analyze the effect of HTM mobility and band structure, surface recombination velocities at interfaces and the effect of series resistance under concentrated light. The simulation results revealed that the low mobility of HTM material limits the improvement in power conversation efficiency of perovskite solar cells under concentration. In addition, large band offset at perovskite/HTM interface contributes to the high series resistance. Moreover, losses due to high surface recombination at interfaces and the high series resistance deteriorate significantly the performance of perovskite solar cells under concentration.

  2. Non-equilibrium spin and charge transport in superconducting heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Thalmann, Marcel; Rudolf, Marcel; Braun, Julian; Pietsch, Torsten; Scheer, Elke [Department of Physics, University of Konstanz, Universitaetsstrasse 10, 78464 Konstanz (Germany)

    2015-07-01

    Ferromagnet Superconductance (F/S) junctions are rich in exciting quantum-physical-phenomena, which are still poorly understood but may provide bright prospects for new applications. In contrast to conventional normal-metal proximity systems, Andreev reflection is suppressed for singlet cooper pairs in F/S heterostructures. However, long-range triplet pairing may be observed in S/F systems with non-collinear magnetization or spin-active interfaces. Herein, we investigate non-equilibrium transport properties of lateral S/F heterojunctions, defined via electron beam lithography. In particular we focus microwave- and magneto-transport spectroscopy on conventional type-I (Al, Pb, Zn) and type-II (Nb) superconductors in combination with strong transition metal ferromagnets (Ni, Co, Fe). A cryogenic HF readout platform and advanced electronic filtering is developed and results on Al-based heterojunctions are shown.

  3. Three-Dimensional Printing Based Hybrid Manufacturing of Microfluidic Devices.

    Science.gov (United States)

    Alapan, Yunus; Hasan, Muhammad Noman; Shen, Richang; Gurkan, Umut A

    2015-05-01

    Microfluidic platforms offer revolutionary and practical solutions to challenging problems in biology and medicine. Even though traditional micro/nanofabrication technologies expedited the emergence of the microfluidics field, recent advances in advanced additive manufacturing hold significant potential for single-step, stand-alone microfluidic device fabrication. One such technology, which holds a significant promise for next generation microsystem fabrication is three-dimensional (3D) printing. Presently, building 3D printed stand-alone microfluidic devices with fully embedded microchannels for applications in biology and medicine has the following challenges: (i) limitations in achievable design complexity, (ii) need for a wider variety of transparent materials, (iii) limited z-resolution, (iv) absence of extremely smooth surface finish, and (v) limitations in precision fabrication of hollow and void sections with extremely high surface area to volume ratio. We developed a new way to fabricate stand-alone microfluidic devices with integrated manifolds and embedded microchannels by utilizing a 3D printing and laser micromachined lamination based hybrid manufacturing approach. In this new fabrication method, we exploit the minimized fabrication steps enabled by 3D printing, and reduced assembly complexities facilitated by laser micromachined lamination method. The new hybrid fabrication method enables key features for advanced microfluidic system architecture: (i) increased design complexity in 3D, (ii) improved control over microflow behavior in all three directions and in multiple layers, (iii) transverse multilayer flow and precisely integrated flow distribution, and (iv) enhanced transparency for high resolution imaging and analysis. Hybrid manufacturing approaches hold great potential in advancing microfluidic device fabrication in terms of standardization, fast production, and user-independent manufacturing.

  4. Film morphology effects on the electrical and optical properties of bulk heterojunction organic solar cells based on MEH-PPV/C60 composite

    International Nuclear Information System (INIS)

    Ltaief, A.; Davenas, J.; Bouazizi, A.; Ben Chaabane, R.; Alcouffe, P.; Ben Ouada, H.

    2005-01-01

    The influence of film morphology on the electrical behaviour of an MEH-PPV/C 60 organic solar cells has been investigated. The dissociation of photogenerated charge pairs in composites of buckminsterfullerenes (C 60 ) in a conjugated polymer matrix (MEH-PPV) forming dispersed heterojunctions was studied at low C 60 acceptor concentrations to separate electron transfer from charge transport effects. The motivation of this study was to analyse the strong dependence of organic solar cell efficiencies on the morphology of the composite. Two effects controlling film morphology have been investigated; the first one being the influence of the fullerene concentration and the second one is the effect of the organic solvent used to deposit the photoactive layer. The sample morphology was studied using atomic force microscopy (AFM). Photoluminescence (PL) experiments and current-voltage (I-V) measurements were performed on the deposited photovoltaic film to investigate the influence of dispersion on the charge transfer process between MEH-PPV and C 60 . An attempt to explain all the results will be presented

  5. An investigation of paper based microfluidic devices for size based separation and extraction applications.

    Science.gov (United States)

    Zhong, Z W; Wu, R G; Wang, Z P; Tan, H L

    2015-09-01

    Conventional microfluidic devices are typically complex and expensive. The devices require the use of pneumatic control systems or highly precise pumps to control the flow in the devices. This work investigates an alternative method using paper based microfluidic devices to replace conventional microfluidic devices. Size based separation and extraction experiments conducted were able to separate free dye from a mixed protein and dye solution. Experimental results showed that pure fluorescein isothiocyanate could be separated from a solution of mixed fluorescein isothiocyanate and fluorescein isothiocyanate labeled bovine serum albumin. The analysis readings obtained from a spectrophotometer clearly show that the extracted tartrazine sample did not contain any amount of Blue-BSA, because its absorbance value was 0.000 measured at a wavelength of 590nm, which correlated to Blue-BSA. These demonstrate that paper based microfluidic devices, which are inexpensive and easy to implement, can potentially replace their conventional counterparts by the use of simple geometry designs and the capillary action. These findings will potentially help in future developments of paper based microfluidic devices. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. A hybrid heterojunction with reverse rectifying characteristics fabricated by magnetron sputtered TiOx and plasma polymerized aniline structure

    International Nuclear Information System (INIS)

    Sarma, Bimal K; Pal, Arup R; Bailung, Heremba; Chutia, Joyanti

    2012-01-01

    A TiO x film produced by direct current reactive magnetron sputtering without substrate heating or post-deposition annealing and a plasma polymerized aniline (PPA) structure deposited in the same reactor by a radio-frequency glow discharge without the assistance of a carrier gas are used for the fabrication of a heterojunction. The gas phase discharge is investigated by a Langmuir probe and optical emission spectroscopy. The individual layers and the heterojunction are characterized for structural and optoelectronic properties. PPA has polymer-like structure and texture and is characterized by saturated-unsaturated, branched and crosslinked networks. X-ray photoelectron spectroscopy reveals a slightly reduced TiO x surface, which exhibits near band edge luminescence. The free radicals trapped in PPA readily react with oxygen when exposed to atmosphere. The heterojunction shows reverse rectifying characteristics under dark and ultraviolet (UV) irradiation. The energy levels of TiO x and PPA might exhibit reverse band bending and electrons and holes are accumulated on both sides of the heterojunction. The charge accumulation phenomena at the interface may play a key role in the device performance of a hybrid heterojunction. The current-voltage characteristic of the heterojunction is sensitive to UV light, so the structure may be used for photo-sensing applications. (paper)

  7. Nanoscale devices based on plasmonic coaxial waveguide resonators

    Science.gov (United States)

    Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

    2015-02-01

    Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

  8. Memristive device based learning for navigation in robots.

    Science.gov (United States)

    Sarim, Mohammad; Kumar, Manish; Jha, Rashmi; Minai, Ali A

    2017-11-08

    Biomimetic robots have gained attention recently for various applications ranging from resource hunting to search and rescue operations during disasters. Biological species are known to intuitively learn from the environment, gather and process data, and make appropriate decisions. Such sophisticated computing capabilities in robots are difficult to achieve, especially if done in real-time with ultra-low energy consumption. Here, we present a novel memristive device based learning architecture for robots. Two terminal memristive devices with resistive switching of oxide layer are modeled in a crossbar array to develop a neuromorphic platform that can impart active real-time learning capabilities in a robot. This approach is validated by navigating a robot vehicle in an unknown environment with randomly placed obstacles. Further, the proposed scheme is compared with reinforcement learning based algorithms using local and global knowledge of the environment. The simulation as well as experimental results corroborate the validity and potential of the proposed learning scheme for robots. The results also show that our learning scheme approaches an optimal solution for some environment layouts in robot navigation.

  9. Silicon nanowire array architecture for heterojunction electronics

    International Nuclear Information System (INIS)

    Solovan, M. M.; Brus, V. V.; Mostovyi, A. I.; Maryanchuk, P. D.; Orletskyi, I. G.; Kovaliuk, T. T.; Abashin, S. L.

    2017-01-01

    Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V_o_c = 0.8 V, short-circuit current I_s_c = 3.72 mA/cm"2 and fill factor FF = 0.5 under illumination of 100 mW/cm"2.

  10. Silicon nanowire array architecture for heterojunction electronics

    Energy Technology Data Exchange (ETDEWEB)

    Solovan, M. M., E-mail: m.solovan@chnu.edu.ua [Chernivtsi National University, Department of Electronics and Energy Engeneering (Ukraine); Brus, V. V. [Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Institute for Silicon Photovoltaics (Germany); Mostovyi, A. I.; Maryanchuk, P. D.; Orletskyi, I. G.; Kovaliuk, T. T. [Chernivtsi National University, Department of Electronics and Energy Engeneering (Ukraine); Abashin, S. L. [National Aerospace University “Kharkiv Aviation Institute”, Department of Physics (Ukraine)

    2017-04-15

    Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.

  11. High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

    Science.gov (United States)

    Ahmari, David Abbas

    Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

  12. Bulk-heterojunction organic solar cells sandwiched by solution processed molybdenum oxide and titania nanosheet layers

    Science.gov (United States)

    Itoh, Eiji; Goto, Yoshinori; Fukuda, Katsutoshi

    2014-02-01

    The contributions of ultrathin titania nanosheet (TN) crystallites were studied in both an inverted bulk-heterojunction (BHJ) cell in an indium-tin oxide (ITO)/titania nanosheet (TN)/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methylester (PCBM) active layer/MoOx/Ag multilayered photovoltaic device and a conventional BHJ cell in ITO/MoOx/P3HT:PCBM active layer/TN/Al multilayered photovoltaic device. The insertion of only one or two layers of poly(diallyldimethylammonium chloride) (PDDA) and TN multilayered film prepared by the layer-by-layer deposition technique effectively decreased the leakage current and increased the open circuit voltage (VOC), fill factor (FF), and power conversion efficiency (η). The conventional cell sandwiched between a solution-processed, partially crystallized molybdenum oxide hole-extracting buffer layer and a TN electron extracting buffer layer showed comparable cell performance to a device sandwiched between vacuum-deposited molybdenum oxide and TN layers, whereas the inverted cell with solution-processed molybdenum oxide showed a poorer performance probably owing to the increment in the leakage current across the film. The abnormal S-shaped curves observed in the inverted BHJ cell above VOC disappeared with the use of a polyfluorene-based cationic semiconducting polymer as a substitute for an insulating PDDA film, resulting in the improved cell performance.

  13. Transparent, broadband, flexible, and bifacial-operable photodetectors containing a large-area graphene-gold oxide heterojunction.

    Science.gov (United States)

    Liu, Yu-Lun; Yu, Chen-Chieh; Lin, Keng-Te; Yang, Tai-Chi; Wang, En-Yun; Chen, Hsuen-Li; Chen, Li-Chyong; Chen, Kuei-Hsien

    2015-05-26

    In this study, we combine graphene with gold oxide (AuOx), a transparent and high-work-function electrode material, to achieve a high-efficient, low-bias, large-area, flexible, transparent, broadband, and bifacial-operable photodetector. The photodetector operates through hot electrons being generated in the graphene and charge separation occurring at the AuOx-graphene heterojunction. The large-area graphene covering the AuOx electrode efficiently prevented reduction of its surface; it also acted as a square-centimeter-scale active area for light harvesting and photodetection. Our graphene/AuOx photodetector displays high responsivity under low-intensity light illumination, demonstrating picowatt sensitivity in the ultraviolet regime and nanowatt sensitivity in the infrared regime for optical telecommunication. In addition, this photodetector not only exhibited broadband (from UV to IR) high responsivity-3300 A W(-1) at 310 nm (UV), 58 A W(-1) at 500 nm (visible), and 9 A W(-1) at 1550 nm (IR)-but also required only a low applied bias (0.1 V). The hot-carrier-assisted photoresponse was excellent, especially in the short-wavelength regime. In addition, the graphene/AuOx photodetector exhibited great flexibility and stability. Moreover, such vertical heterojunction-based graphene/AuOx photodetectors should be compatible with other transparent optoelectronic devices, suggesting applications in flexible and wearable optoelectronic technologies.

  14. 77 FR 16126 - Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for Mycobacterium tuberculosis

    Science.gov (United States)

    2012-03-19

    .... FDA-2012-N-0159] Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for... convened a meeting of the Microbiology Devices Panel of the Medical Devices Advisory Committee (Microbiology Devices Panel) on June 29, 2011 (Ref. 2). Although not a formal reclassification meeting, panel...

  15. A monitoring device for pressurised-air-driven diaphragm-based artificial heart assist devices

    NARCIS (Netherlands)

    Hoeben, F.P.; Hoeben, F.P.; de Mul, F.F.M.; Stokkink, J.S.D.; Stokkink, H.S.D.; Koelink, M.H.; Koelink, M.H.; Greve, Jan

    1992-01-01

    A non-invasive device has been developed to monitor the diaphragm position and the blood flow in artificial heart assist devices equipped with a pressurised-air-driven diaphragm. Light scattering from the diaphragm is used as a mechanism for measuring. Information about the position of several

  16. All solution processed tandem polymer solar cells based on thermocleavable materials

    DEFF Research Database (Denmark)

    Hagemann, Ole; Bjerring, Morten; Nielsen, Niels Chr.

    2008-01-01

    efficiently solved. Devices comprised a transparent front cathode based on solution processed zinc oxide nanoparticles, a large band gap active layer based on a bulk heterojunction between zinc oxide and poly(3-carboxydithiophene) (P3CT) followed by a layer of PEDOT:PSS processed from water. The second cell...... in the stack employed a zinc oxide front cathode processed on top of the PEDOT:PSS layer from an organic solvent, a low band gap active layer based on a bulk heterojunction between zinc oxide and the novel poly(carboxyterthiophene-co-diphenylthienopyrazine) (P3CTTP) followed by a layer of PEDOT:PSS again...

  17. Shelf life and outdoor degradation studies of organic bulk heterojunction solar cells

    Science.gov (United States)

    Gergova, R.; Sendova-Vassileva, M.; Popkirov, G.; Gancheva, V.; Grancharov, G.

    2018-03-01

    We studied the degradation of different types of bulk heterojunction devices, in which the materials comprising the active layer and/or the materials used for the back electrode are varied. The devices are deposited on ITO covered glass and have the structure PEDOT:PSS/BHJ/Me, where PEDOT:PSS is the hole transport layer, BHJ (bulk heterojunction) is the active layer comprising a polymer donor (e.g. PTB7, PCDTBT) and a fullerene derivative acceptor (e.g. PC60BM, PC70BM) deposited by spin coating, Me is the metal back contact, which is either Ag or Al deposited by magnetron sputtering or thermal evaporation. The device performance was monitored after storage in the dark at ambient conditions by following the evolution of the J-V curve over time. Results of real conditions outdoor degradation studies are also presented. The stability of the different solar cell structures studied is compared.

  18. High Detectivity Graphene-Silicon Heterojunction Photodetector.

    Science.gov (United States)

    Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

    2016-02-03

    A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Optical and electronic proprieties of thin films based on (Z-5-(4-chlorobenzylidene-3-(2-ethoxyphenyl-2 thioxothiazolidin-4-one, (CBBTZ and possible application as exciton-blocking layer in heterojunction organic solar cells

    Directory of Open Access Journals (Sweden)

    Morsli M.

    2012-06-01

    Full Text Available In this work, organic thin film solar cells with structures based on CuPc/C60 bulk heterojunctions, have been fabricated and characterized. The effect of introducing an exciton blocking layer (EBL between the active layer and the metal layer in the solar cell was investigated. For that (Z-5-(4-chlorobenzylidene-3-(2-ethoxyphenyl-2-thioxothiazolidin-4-one, that we called (CBBTZ has been synthesized, characterized and probed as EBL. It was shown that optimized structures containing EBLs resulted in an improvement in solar cell conversion efficiencies. The energy levels corresponding to the highest occupied molecular orbital (HOMO and the lowest unoccupied molecular orbital (LUMO of the CBBTZ have been determined from the first oxidation and reduction potential respectively, using cyclic voltametric (CV measurements. From CV curves, CBBTZ in dichloromethane showed a one electron reversible reduction and oxidation waves. The values of its HOMO and LUMO have been estimated to be 6.42 eV and 3.42 eV respectively. Such values show that CBBTZ could be probed as EBL in organic solar cells based on the ED/EA couple copper phthalocyanine(CuPc/fullerene (C60. The photovoltaic solar cells have been obtained by sequential deposition under vacuum of the different films where their thicknesses were measured in situ by a quartz monitor. When obtained, the averaged efficiency of the cells using the CBBTZ is higher than that achieved without EBL layer.

  20. Dental enamel defect diagnosis through different technology-based devices.

    Science.gov (United States)

    Kobayashi, Tatiana Yuriko; Vitor, Luciana Lourenço Ribeiro; Carrara, Cleide Felício Carvalho; Silva, Thiago Cruvinel; Rios, Daniela; Machado, Maria Aparecida Andrade Moreira; Oliveira, Thais Marchini

    2018-06-01

    Dental enamel defects (DEDs) are faulty or deficient enamel formations of primary and permanent teeth. Changes during tooth development result in hypoplasia (a quantitative defect) and/or hypomineralisation (a qualitative defect). To compare technology-based diagnostic methods for detecting DEDs. Two-hundred and nine dental surfaces of anterior permanent teeth were selected in patients, 6-11 years of age, with cleft lip with/without cleft palate. First, a conventional clinical examination was conducted according to the modified Developmental Defects of Enamel Index (DDE Index). Dental surfaces were evaluated using an operating microscope and a fluorescence-based device. Interexaminer reproducibility was determined using the kappa test. To compare groups, McNemar's test was used. Cramer's V test was used for comparing the distribution of index codes obtained after classification of all dental surfaces. Cramer's V test revealed statistically significant differences (P < .0001) in the distribution of index codes obtained using the different methods; the coefficients were 0.365 for conventional clinical examination versus fluorescence, 0.961 for conventional clinical examination versus operating microscope and 0.358 for operating microscope versus fluorescence. The sensitivity of the operating microscope and fluorescence method was statistically significant (P = .008 and P < .0001, respectively). Otherwise, the results did not show statistically significant differences in accuracy and specificity for either the operating microscope or the fluorescence methods. This study suggests that the operating microscope performed better than the fluorescence-based device and could be an auxiliary method for the detection of DEDs. © 2017 FDI World Dental Federation.