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Sample records for heterojunction device based

  1. Graphene-based heterojunction photocatalysts

    Science.gov (United States)

    Li, Xin; Shen, Rongchen; Ma, Song; Chen, Xiaobo; Xie, Jun

    2018-02-01

    Due to their unique physicochemical, optical and electrical properties, 2D semimetallic or semiconducting graphene has been extensively utilized to construct highly efficient heterojunction photocatalysts for driving a variety of redox reactions under proper light irradiation. In this review, we carefully addressed the fundamental mechanism of heterogeneous photocatalysis, fundamental properties and advantages of graphene in photocatalysis, and classification and comparison of graphene-based heterojunction photocatalysts. Subsequently, we thoroughly highlighted and discussed various graphene-based heterojunction photocatalysts, including Schottky junctions, Type-II heterojunctions, Z-scheme heterojunctions, Van der Waals heterostructures, in plane heterojunctions and multicomponent heterojunctions. Several important photocatalytic applications, such as photocatalytic water splitting (H2 evolution and overall water splitting), degradation of pollutants, carbon dioxide reduction and bacteria disinfection, are also summarized. Through reviewing the important advances on this topic, it may inspire some new ideas for exploiting highly effective graphene-based heterojunction photocatalysts for a number of applications in photocatlysis and other fields, such as photovoltaic, (photo)electrocatalysis, lithium battery, fuel cell, supercapacitor and adsorption separation.

  2. Design of electronic devices based on carbon nanotubes heterojunction contacts to Zn ring layers

    Directory of Open Access Journals (Sweden)

    A Shokri

    2017-09-01

    Full Text Available In recent years, due to electron transport properties of nanostructures based on carbon nanotubes, a lot of attention to design electronic devices in the field of nanotechnology has attracted. There are three types of carbon nanotubes in zigzag, armchair and chiral (asymmetrical forms. Since the types of armchair are electrically conductive, by a combination with a metal such as zinc can be achieved by various means distinct applications. In this respect, we select different layers of circular connectors on the number of atoms of 10, 20 and 30, respectively, in the systems A-Zn10-A, A-Zn20-A and A-Zn30-A, where (A: armchair. Our calculations are based on the Green's function method within tight-binding approximation in the nearest neighbors in the framework of Landauer. The results are able to predict that devices with different functions such as quantum conductor wire, negative differential resistance and rectifier design. The results may be useful in the design of electronic devices at the nanometer scale.

  3. Interfacial Engineering for Highly Efficient-Conjugated Polymer-Based Bulk Heterojunction Photovoltaic Devices

    Energy Technology Data Exchange (ETDEWEB)

    Alex Jen; David Ginger; Christine Luscombe; Hong Ma

    2012-04-02

    The aim of our proposal is to apply interface engineering approach to improve charge extraction, guide active layer morphology, improve materials compatibility, and ultimately allow the fabrication of high efficiency tandem cells. Specifically, we aim at developing: i. Interfacial engineering using small molecule self-assembled monolayers ii. Nanostructure engineering in OPVs using polymer brushes iii. Development of efficient light harvesting and high mobility materials for OPVs iv. Physical characterization of the nanostructured systems using electrostatic force microscopy, and conducting atomic force microscopy v. All-solution processed organic-based tandem cells using interfacial engineering to optimize the recombination layer currents vi. Theoretical modeling of charge transport in the active semiconducting layer The material development effort is guided by advanced computer modeling and surface/ interface engineering tools to allow us to obtain better understanding of the effect of electrode modifications on OPV performance for the investigation of more elaborate device structures. The materials and devices developed within this program represent a major conceptual advancement using an integrated approach combining rational molecular design, material, interface, process, and device engineering to achieve solar cells with high efficiency, stability, and the potential to be used for large-area roll-to-roll printing. This may create significant impact in lowering manufacturing cost of polymer solar cells for promoting clean renewable energy use and preventing the side effects from using fossil fuels to impact environment.

  4. Flexible resistive switching device based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/poly(4-vinylphenol) (PVP) composite and methyl red heterojunction

    Science.gov (United States)

    Hassan, Gul; Ali, Shawkat; Bae, Jinho; Lee, Chong Hyun

    2017-04-01

    To obtain a desired performance of non-volatile memory applications, heterojunction-based resistive switching devices have tremendous attractions. In this paper, we demonstrate resistive switching characteristics for heterojunction of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/poly(4-vinylphenol) (PVP) composite and methyl red sandwiched in between bottom and top silver (Ag) electrodes. The proposed heterojunction layers are fabricated through spin coater at 3000 rpm for 60 s each, and the Ag electrodes are deposited through a commercialized inkjet printer DMP-3000 on polyethyleneterephthalate (PET) substrate. To verify the proposed device, the resistive switching on dual polarity voltage of ±10.2 V is measured over more than 500 endurance cycles. The paper also presents an R off/ R on ratio which can adjust through an active layer's area and a blending ratio of the PEDOT:PSS and PVP. By applying the area of 100 μm2 and the blending ratio of 3:1, we achieve the higher R off/ R on ratio of 121, and its high resistance state (HRS) and low resistance state (LRS) are observed as 3000 kΩ and 24.7 kΩ, respectively. To maintain a long retention time, the device is encapsulated with PDMS, which changes a little variations of 52 Ω for HRS 498 Ω for LRS over 60 days. For the flexible realization to be utilized in wearable applications, it can be easily applied on a plastic substrate using printed technologies.

  5. Interface engineering: broadband light and low temperature gas detection abilities using a nano-heterojunction device.

    Science.gov (United States)

    Chang, Chien-Min; Hsu, Ching-Han; Liu, Yi-Wei; Chien, Tzu-Chiao; Sung, Chun-Han; Yeh, Ping-Hung

    2015-12-21

    Herein, we have designed a nano-heterojunction device using interface defects and band bending effects, which can have broadband light detection (from 365-940 nm) and low operating temperature (50 °C) gas detection abilities. The broadband light detection mechanism occurs because of the defects and band bending between the heterojunction interface. We have demonstrated this mechanism using CoSi2/SnO2, CoSi2/TiO2, Ge/SnO2 and Ge/TiO2 nano-heterojunction devices, and all these devices show broadband light detection ability. Furthermore, the nano-heterojunction of the nano-device has a local Joule-heating effect. For gas detection, the results show that the nano-heterojunction device presents a high detection ability. The reset time and sensitivity of the nano-heterojunction device are an order faster and larger than Schottky-contacted devices (previous works), which is due to the local Joule-heating effect between the interface of the nano-heterojunction. Based on the abovementioned idea, we can design diverse nano-devices for widespread use.

  6. Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Xiwei Zhang

    2017-10-01

    Full Text Available Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-dimensional nanostructures have been obtained in the past decade. Herein, we present a review of a series of progress in this field. First, construction strategies towards different types of heterojunctions are reviewed, including core-shell heterojunctions, one-dimensional axial heterojunctions, crossed nanowires heterojunctions, and one-dimensional nanostructure/thin film or Si substrate heterojunctions. Secondly, optoelectronic applications of these constructed heterojunctions, such as photodetectors, solar cells, light emitting diodes, junction field effect transistors, etc., are discussed briefly. This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications.

  7. 3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters

    Science.gov (United States)

    Alim, Mohammad A.; Rezazadeh, Ali A.

    2017-06-01

    This study focuses on 3-D multilayer monolithic integration of vertical-oriented double-heterojunction AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors. The effects of the presence of 3-D components above the active layer were accomplished by comparing three multilayer fabricated device of different thickness with a virgin device where the thickness of the 3-D components e.g., both metal and polyimide layer were varied. The output current, on-state gate leakage, transconductance are found to be decrease with the increase in thickness of the 3-D components and on the other hand, the on-state resistance, knee voltage and off-state gate leakage is increased. Lastly, the thermal influences on the device behaviour such as off-state and on-state gate leakage, barrier inhomogeneities at Schottky contacts, zero temperature coefficients at the transfer curve, and the threshold voltage as a function of drain bias were measured and analyzed for the both pre and post fabricated multilayer devices. These effective comparisons in terms of thickness and temperature of the both device are useful for future designs and optimizations of multilayer vertical stacked 3-D MMICs.

  8. Cohesion and device reliability in organic bulk heterojunction photovoltaic cells

    KAUST Repository

    Brand, Vitali

    2012-04-01

    The fracture resistance of P3HT:PC 60BM-based photovoltaic devices are characterized using quantitative adhesion and cohesion metrologies that allow identification of the weakest layer or interface in the device structure. We demonstrate that the phase separated bulk heterojunction layer is the weakest layer and report quantitative cohesion values which ranged from ∼1 to 20 J m -2. The effects of layer thickness, composition, and annealing treatments on layer cohesion are investigated. Using depth profiling and X-ray photoelectron spectroscopy on the resulting fracture surfaces, we examine the gradient of molecular components through the thickness of the bulk heterojunction layer. Finally, using atomic force microscopy we show how the topography of the failure path is related to buckling of the metal electrode and how it develops with annealing. The research provides new insights on how the molecular design, structure and composition affect the cohesive properties of organic photovoltaics. © 2011 Elsevier B.V. All rights reserved.

  9. Fast-Response Photonic Device Based on Organic-Crystal Heterojunctions Assembled into a Vertical-Yet-Open Asymmetric Architecture.

    Science.gov (United States)

    Zhang, Lei; Pavlica, Egon; Zhong, Xiaolan; Liscio, Fabiola; Li, Songlin; Bratina, Gvido; Orgiu, Emanuele; Samorì, Paolo

    2017-03-01

    Crystalline dioctyl-3,4,9,10-perylenedicarboximide nanowires and 6,13-bis(triisopropylsilylethynyl) pentacene microplates are integrated into a vertical-yet-open asymmetrical heterojunction for the realization of a high-performance organic photovoltaic detector, which shows fast photoresponse, ultrahigh signal-to-noise ratio, and high sensitivity to weak light. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

    KAUST Repository

    Chavali, Raghu V. K.

    2018-01-15

    The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent, with Kaneka setting the world\\'s silicon solar cell efficiency record of 26.63% using silicon heterojunction contacts in an interdigitated configuration. Although passivating-contact solar cells are remarkably efficient, their underlying device physics is not yet completely understood, not in the least because they are constructed from diverse materials that may introduce electronic barriers in the current flow. To bridge this gap in understanding, we explore the device physics of passivating contact silicon heterojunction (SHJ) solar cells. Here, we identify the key properties of heterojunctions that affect cell efficiency, analyze the dependence of key heterojunction properties on carrier transport under light and dark conditions, provide a self-consistent multiprobe approach to extract heterojunction parameters using several characterization techniques (including dark J-V, light J-V, C-V, admittance spectroscopy, and Suns-Voc), propose design guidelines to address bottlenecks in energy production in SHJ cells, and develop a process-to-module modeling framework to establish the module\\'s performance limits. We expect that our proposed guidelines resulting from this multiscale and self-consistent framework will improve the performance of future SHJ cells as well as other passivating contact-based solar cells.

  11. Thermodynamic efficiency limit of molecular donor-acceptor solar cells and its application to diindenoperylene/C{sub 60}-based planar heterojunction devices

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Mark; Wagner, Julia; Hoermann, Ulrich; Opitz, Andreas; Bruetting, Wolfgang [Institut fuer Physik, Universitaet Augsburg, Universitaetsstr.1, 86135 Augsburg (Germany); Klein, Konrad; Stutzmann, Martin [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 4, 85748 Garching (Germany)

    2012-09-15

    In organic photovoltaic (PV) cells, the well-established donor-acceptor (D/A) concept enabling photo-induced charge transfer between two partners with suitable energy level alignment has proven extremely successful. Nevertheless, the introduction of such a heterojunction is accompanied with additional energy losses as compared to an inorganic homojunction cell, owing to the presence of a charge-transfer (CT) state at the D/A interface. Based on the principle of detailed balance, a modified Shockley-Queisser theory is developed including the essential effects of interfacial CT states, that allows for a quantitative assessment of the thermodynamic efficiency limits of molecular D/A solar cells. Key parameters, apart from the optical gap of the absorber material, entering the model are the energy (E{sub CT}) and relative absorption strength ({alpha}{sub CT}) of the CT state. It is demonstrated how the open-circuit voltage (V{sub OC}) and thus the power conversion efficiency are affected by different parameter values. Furthermore, it is shown that temperature dependent device characteristics can serve to determine the CT energy, and thus the upper limit of V{sub OC} for a given D/A combination, as well as to quantify non-radiative recombination losses. The model is applied to diindenoperylene (DIP)-based photovoltaic devices, with open-circuit voltages between 0.9 and 1.4 V, depending on the partner, that have recently been reported. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Reporting performance in MoS{sub 2}–TiO{sub 2} bilayer and heterojunction films based dye-sensitized photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    He, Zuoli, E-mail: wandaohzl@163.com; Que, Wenxiu, E-mail: wxque@mail.xjtu.edu.cn; Xing, Yonglei; Liu, Xiaobin

    2016-07-05

    Three types of bilayer and heterojunction films photoanodes were designed and fabricated from green synthesized MoS{sub 2} and TiO{sub 2} nanoparticles (NPs), and then the dye-sensitized solar cells based on these various films photoanodes were investigated. Results demonstrated that layered semiconductor MoS{sub 2} could be a viable material candidate for solar cell applications due to its superior photoelectric characteristics. The DSSCs from the MoS{sub 2}@TiO{sub 2} heterojunction film photoanode exhibit the highest solar energy conversion efficiency of 6.02% under AM 1.5G simulated solar irradiation, which is 1.5 times higher than that of the cell from pure TiO{sub 2} film photoanode. MoS{sub 2}–TiO{sub 2} heterojunction at the interface helps MoS{sub 2} NPs to efficiently collect the photo-injected electrons from TiO{sub 2} NPs, thus reduce charge recombination at both the NPs-electrolyte and NPs-dye interfaces. These advantages together with collecting or transferring injected electrons abilities by combining the improved light absorption and the large dye-loading capacity of such structural NPs films, rendering the MoS{sub 2}–TiO{sub 2} composite photoelectrode superior potential for DSSCs applications. - Highlights: • MoS{sub 2} and TiO{sub 2} NPs were synthesized via green process using rape pollen grains as bio-templates. • DSSCs based on these various bilayer and heterojunction films photoanodes were investigated. • Enhanced η of MoS{sub 2}@TiO{sub 2} based DSSCs was related to its strong light adsorption ability. • The mechanism of electron transport in these various films photoanodes was proposed.

  13. High Photoelectric Conversion Efficiency of Metal Phthalocyanine/Fullerene Heterojunction Photovoltaic Device

    Science.gov (United States)

    Lin, Chi-Feng; Zhang, Mi; Liu, Shun-Wei; Chiu, Tien-Lung; Lee, Jiun-Haw

    2011-01-01

    This paper introduces the fundamental physical characteristics of organic photovoltaic (OPV) devices. Photoelectric conversion efficiency is crucial to the evaluation of quality in OPV devices, and enhancing efficiency has been spurring on researchers to seek alternatives to this problem. In this paper, we focus on organic photovoltaic (OPV) devices and review several approaches to enhance the energy conversion efficiency of small molecular heterojunction OPV devices based on an optimal metal-phthalocyanine/fullerene (C60) planar heterojunction thin film structure. For the sake of discussion, these mechanisms have been divided into electrical and optical sections: (1) Electrical: Modification on electrodes or active regions to benefit carrier injection, charge transport and exciton dissociation; (2) Optical: Optional architectures or infilling to promote photon confinement and enhance absorption. PMID:21339999

  14. High Photoelectric Conversion Efficiency of Metal Phthalocyanine/Fullerene Heterojunction Photovoltaic Device

    Directory of Open Access Journals (Sweden)

    Tien-Lung Chiu

    2011-01-01

    Full Text Available This paper introduces the fundamental physical characteristics of organic photovoltaic (OPV devices. Photoelectric conversion efficiency is crucial to the evaluation of quality in OPV devices, and enhancing efficiency has been spurring on researchers to seek alternatives to this problem. In this paper, we focus on organic photovoltaic (OPV devices and review several approaches to enhance the energy conversion efficiency of small molecular heterojunction OPV devices based on an optimal metal-phthalocyanine/fullerene (C60 planar heterojunction thin film structure. For the sake of discussion, these mechanisms have been divided into electrical and optical sections: (1 Electrical: Modification on electrodes or active regions to benefit carrier injection, charge transport and exciton dissociation; (2 Optical: Optional architectures or infilling to promote photon confinement and enhance absorption.

  15. GaAs integrated circuits and heterojunction devices

    Science.gov (United States)

    Fowlis, Colin

    1986-06-01

    The state of the art of GaAs technology in the U.S. as it applies to digital and analog integrated circuits is examined. In a market projection, it is noted that whereas analog ICs now largely dominate the market, in 1994 they will amount to only 39 percent vs. 57 percent for digital ICs. The military segment of the market will remain the largest (42 percent in 1994 vs. 70 percent today). ICs using depletion-mode-only FETs can be constructed in various forms, the closest to production being BFL or buffered FET logic. Schottky diode FET logic - a lower power approach - can reach higher complexities and strong efforts are being made in this direction. Enhancement type devices appear essential to reach LSI and VLSI complexity, but process control is still very difficult; strong efforts are under way, both in the U.S. and in Japan. Heterojunction devices appear very promising, although structures are fairly complex, and special fabrication techniques, such as molecular beam epitaxy and MOCVD, are necessary. High-electron-mobility-transistor (HEMT) devices show significant performance advantages over MESFETs at low temperatures. Initial results of heterojunction bipolar transistor devices show promise for high speed A/D converter applications.

  16. Transparent Cu4O3/ZnO heterojunction photoelectric devices

    Science.gov (United States)

    Kim, Hong-Sik; Yadav, Pankaj; Patel, Malkeshkumar; Kim, Joondong; Pandey, Kavita; Lim, Donggun; Jeong, Chaehwan

    2017-12-01

    The present article reports the development of flexible, self-biased, broadband, high speed and transparent heterojunction photodiode, which is essentially important for the next generation electronic devices. We grow semitransparent p-type Cu4O3 using the reactive sputtering method at room temperature. The structural and optical properties of the Cu4O3 film were investigated by using the X-ray diffraction and UV-visible spectroscopy, respectively. The p-Cu4O3/n-ZnO heterojunction diode under dark condition yields rectification behavior with an extremely low saturation current value of 1.8 × 10-10 A and a zero bias photocurrent under illumination condition. The transparent p-Cu4O3/n-ZnO heterojunction photodetector can be operated without an external bias, due to the light-induced voltage production. The metal oxide heterojunction based on Cu4O3/ZnO would provide a route for the transparent and flexible photoelectric devices, including photodetectors and photovoltaics.

  17. Different Device Architectures for Bulk-Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Getachew Adam

    2016-08-01

    Full Text Available We report different solar cell designs which allow a simple electrical connection of subsequent devices deposited on the same substrate. By arranging so-called standard and inverted solar-cell architectures next to each other, a serial connection of the two devices can easily be realized by a single compound electrode. In this work, we tested different interfacial layer materials like polyethylenimine (PEI and PEDOT:PSS, and silver as a non-transparent electrode material. We also built organic light emitting diodes applying the same device designs demonstrating the versatility of applied layer stacks. The proposed design should allow the preparation of organic bulk-heterojunction modules with minimized photovoltaically inactive regions at the interconnection of individual devices.

  18. Device physics of polymer: fullerene bulk heterojunction solar cells

    OpenAIRE

    Blom, Paul W. M.; Mihailetchi, Valentin D.; Koster, L. Jan Anton; Markov, Denis E.

    2007-01-01

    Plastic solar cells bear the potential for large-scale power generation based on materials that provide the possibility of flexible, lightweight, inexpensive, efficient solar cells. Since the discovery of the photoinduced electron transfer from a conjugated polymer to fullerene molecules, followed by the introduction of the bulk heterojunction (BHJ) concept, this material combination has been extensively studied in organic solar cells, leading to several breakthroughs in efficiency, with a po...

  19. Analysis of bulk heterojunction material parameters using lateral device structures

    Science.gov (United States)

    Danielson, Eric; Ooi, Zi-En; Liang, Kelly; Morris, Joshua; Lombardo, Christopher; Dodabalapur, Ananth

    2014-01-01

    We review the key optoelectronic properties of lateral organic bulk heterojunction (BHJ) device structures with asymmetric contacts. These structures are used to develop a detailed model of charge transport and recombination properties within materials used for organic photovoltaics. They permit a variety of direct measurement techniques, such as nonlinear optical microscopy and in situ potentiometry, as well as photoconductive gain and carrier drift length studies from photocurrent measurements. We present a theoretical framework that describes the charge transport physics within these devices. The experimental results presented are in agreement with this framework and can be used to measure carrier concentrations, recombination coefficients, and carrier mobilities within BHJ materials. Lateral device structures offer a useful complement to measurements on vertical photovoltaic structures and provide a more complete and detailed picture of organic BHJ materials.

  20. Device physics of polymer: fullerene bulk heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Blom, P.W.M.; Mihailetchi, V.D.; Koster, L.J.A.; Markov, D.E. [Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands)

    2007-06-18

    Plastic solar cells bear the potential for large-scale power generation based on materials that provide the possibility of flexible, lightweight, inexpensive, efficient solar cells. Since the discovery of the photoinduced electron transfer from a conjugated polymer to fullerene molecules, followed by the introduction of the bulk heterojunction (BHJ) concept, this material combination has been extensively studied in organic solar cells, leading to several breakthroughs in efficiency, with a power conversion efficiency approaching 5 %. This article reviews the processes and limitations that govern device operation of polymer:fullerene BHJ solar cells, with respect to the charge-carrier transport and photogeneration mechanism. The transport of electrons/holes in the blend is a crucial parameter and must be controlled (e.g., by controlling the nanoscale morphology) and enhanced in order to allow fabrication of thicker films to maximize the absorption, without significant recombination losses. Concomitantly, a balanced transport of electrons and holes in the blend is needed to suppress the build-up of the space-charge that will significantly reduce the power conversion efficiency. Dissociation of electron-hole pairs at the donor/acceptor interface is an important process that limits the charge generation efficiency under normal operation condition. Based on these findings, there is a compromise between charge generation (light absorption) and open-circuit voltage (V{sub OC}) when attempting to reduce the bandgap of the polymer (or fullerene). Therefore, an increase in V{sub OC} of polymer: fullerene cells, for example by raising the lowest unoccupied molecular orbital level of the fullerene, will benefit cell performance as both fill factor and short-circuit current increase simultaneously. (Abstract Copyright [2007], Wiley Periodicals, Inc.)

  1. Strategies for increasing the efficiency of heterojunction organic solar cells: material selection and device architecture.

    Science.gov (United States)

    Heremans, Paul; Cheyns, David; Rand, Barry P

    2009-11-17

    Thin-film blends or bilayers of donor- and acceptor-type organic semiconductors form the core of heterojunction organic photovoltaic cells. Researchers measure the quality of photovoltaic cells based on their power conversion efficiency, the ratio of the electrical power that can be generated versus the power of incident solar radiation. The efficiency of organic solar cells has increased steadily in the last decade, currently reaching up to 6%. Understanding and combating the various loss mechanisms that occur in processes from optical excitation to charge collection should lead to efficiencies on the order of 10% in the near future. In organic heterojunction solar cells, the generation of photocurrent is a cascade of four steps: generation of excitons (electrically neutral bound electron-hole pairs) by photon absorption, diffusion of excitons to the heterojunction, dissociation of the excitons into free charge carriers, and transport of these carriers to the contacts. In this Account, we review our recent contributions to the understanding of the mechanisms that govern these steps. Starting from archetype donor-acceptor systems of planar small-molecule heterojunctions and solution-processed bulk heterojunctions, we outline our search for alternative materials and device architectures. We show that non-planar phthalocynanines have appealing absorption characteristics but also have reduced charge carrier transport. As a result, the donor layer needs to be ultrathin, and all layers of the device have to be tuned to account for optical interference effects. Using these optimization techniques, we illustrate cells with 3.1% efficiency for the non-planar chloroboron subphthalocyanine donor. Molecules offering a better compromise between absorption and carrier mobility should allow for further improvements. We also propose a method for increasing the exciton diffusion length by converting singlet excitons into long-lived triplets. By doping a polymer with a

  2. Organic photovoltaic devices produced from conjugated polymer/methanofullerene bulk heterojunctions

    NARCIS (Netherlands)

    Brabec, C.J.; Shaheen, S.E.; Fromherz, T.; Padinger, F.; Hummelen, J.C.; Dhanabalan, A.; Janssen, R.A.J.; Sariciftci, N.S.

    2001-01-01

    Organic photovoltaic devices have been fabricated utilizing the photoinduced electron transfer with long-living charge separation in conjugated polymer/methanofullerene thin films. The performance of such "bulk heterojunction" photovoltaic devices is critically dependent on the charge transport

  3. Molecular Intercalation and Cohesion of Organic Bulk Heterojunction Photovoltaic Devices

    KAUST Repository

    Bruner, Christopher

    2013-01-17

    The phase separated bulk heterojunction (BHJ) layer in BHJ polymer:fullerene organic photovoltaic devices (OPV) are mechanically weak with low values of cohesion. Improved cohesion is important for OPV device thermomechanical reliability. BHJ devices are investigated and how fullerene intercalation within the active layer affects cohesive properties in the BHJ is shown. The intercalation of fullerenes between the side chains of the polymers poly(3,3″′-didocecyl quaterthiophene) (PQT-12) and poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT) is shown to enhance BHJ layer cohesion. Cohesion values range from ≈1 to 5 J m -2, depending on the polymer:fullerene blend, processing conditions, and composition. Devices with non-intercalated BHJ layers are found to have significantly reduced values of cohesion. The resulting device power conversion efficiencies (PCE) are also investigated and correlated with the device cohesion. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Investigation of Interface Charges at the Heterojunction Discontinuity in HBT Devices

    DEFF Research Database (Denmark)

    Fuente, Jesús Grajal de al; Krozer, Viktor

    2002-01-01

    In this paper we investigate the impact of interface charges at heterojunctions on the performance of heterostructure bipolar transistors (HBT). Interface charges can modify the limiting process for the carrier transport in a device. Therefore. intentional interface charges introduced by delta......-doped layers are basic tools for interface engineering. An accurate modelling of heterointerfaces which includes thermionic-field emission, surface charges, and surface dipoles allows to analyse the electrical performance of some modern devices based on band gap and interface engineering. It is demonstrated...... Science Ltd. All rights reserved....

  5. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors

    Science.gov (United States)

    Ren, F.; Douglas, E. A.; Pearton, Stephen J.

    The two main GaAs-based electronic device technologies are high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). Both technologies are commercialized for use in low-noise amplifiers, radar, and fiber optic data transmission systems. In this chapter, we will summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported but differ in the two device technologies - for HEMTs, the layers are thin and relatively lightly doped compared to HBT structures, and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

  6. InN-based heterojunction photodetector with extended infrared response

    KAUST Repository

    Hsu, Lung-Hsing

    2015-11-21

    © 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

  7. Device model for the operation of polymer/fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Koster, LJA; Smits, ECP; Mihailetchi, VD; Blom, PWM

    We have developed a numerical device model that consistently describes the current-voltage characteristics of polymer:fullerene bulk heterojunction solar cells. Bimolecular recombination and a temperature- and field-dependent generation mechanism of free charges are incorporated. It is demonstrated

  8. Reduction of Charge-Carrier Recombination at ZnO-Polymer Blend Interfaces in PTB7-Based Bulk Heterojunction Solar Cells Using Regular Device Structure: Impact of ZnO Nanoparticle Size and Surfactant.

    Science.gov (United States)

    Ben Dkhil, Sadok; Gaceur, Meriem; Diallo, Abdou Karim; Didane, Yahia; Liu, Xianjie; Fahlman, Mats; Margeat, Olivier; Ackermann, Jörg; Videlot-Ackermann, Christine

    2017-05-24

    Cathode interfacial layers, also called electron extraction layers (EELs), based on zinc oxide (ZnO) have been studied in polymer-blend solar cells toward optimization of the opto-electric properties. Bulk heterojunction solar cells based on poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}) (PTB7) and [6,6]-phenyl-C71-butyric acid methyl ester (PC70BM) were realized in regular structure with all-solution-processed interlayers. A pair of commercially available surfactants, ethanolamine (EA) and ethylene glycol (EG), were used to modify the surface of ZnO nanoparticles (NPs) in alcohol-based dispersion. The influence of ZnO particle size was also studied by preparing dispersions of two NP diameters (6 versus 11 nm). Here, we show that performance improvement can be obtained in polymer solar cells via the use of solution-processed ZnO EELs based on surface-modified nanoparticles. By the optimizing of the ZnO dispersion, surfactant ratio, and the resulting morphology of EELs, PTB7/PC70BM solar cells with a power-conversion efficiency of 8.2% could be obtained using small sized EG-modified ZnO NPs that allow the clear enhancement of the performance of solution-processed photovoltaic devices compared to state-of-the-art ZnO-based cathode layers.

  9. Time-Resolved Microwave Photoconductivity study of the Photophysics of Bulk Heterojunction Organic Photovoltaic Devices

    Science.gov (United States)

    Kopidakis, Nikos; Ferguson, Andrew; Shaheen, Sean; Rumbles, Garry

    2007-03-01

    Bulk heterojunctions composed of a blend of the polymer poly(3-hexylthiophene) (P3HT) and the acceptor fullerene derivative [6,6]-phenyl C61-butyric acid methyl ester (PCBM) are the prototypical organic photovoltaic devices. The photophysical processes that take place in these structures involve exciton generation and quenching, and free carrier transport, trapping and recombination. To probe these processes we have performed contactless Time-Resolved Microwave Photoconductivity measurements in pure polymer films and in bulk heterojunctions with varying PCBM concentration. We compare our results with various models for free carrier generation in the pure polymer and in the bulk heterojunction and develop a kinetic scheme to describe free carrier generation and recombination that is consistent with our experimental data. We show that exciton quenching in the presence of the acceptor (PCBM) involves first and second order processes that become prevalent at low and high light intensities, respectively.

  10. Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Peterson, George [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Su, Qing [Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Wang, Yongqiang [Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Dowben, Peter A. [Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0298 (United States); Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588-0299 (United States); Nastasi, Michael, E-mail: mnastasi2@unl.edu [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0298 (United States)

    2015-12-15

    Highlights: • Amorphous boron carbide films were grown on n-type silicon creating a heterojunction. • We irradiated the devices with 200 keV alpha particles to varying levels of damage. • We measured the current versus voltage at each level of damage for the device. • The electrical properties improved with moderate amounts of irradiation. • Device failure is due to the fragility of the Si, not the boron carbide film. - Abstract: Amorphous hydrogenated boron carbide films (a-B{sub 10}C{sub 2+x}:H{sub y}) on Si p–n heterojunctions were fabricated utilizing plasma enhanced chemical vapor deposition (PECVD). These devices were found to be robust when irradiated with 200 keV He{sup +} ions. For low doses of irradiation, contrary to most other electrical devices, the electrical performance improved. On the heterojunction I(V) curve, reverse bias leakage current decreased by 3 orders of magnitude, series resistance across the device decreased by 64%, and saturation current due to generation of electron–hole pairs in the depletion region also decreased by an order of magnitude. It is believed that the improvements in the electrical properties of the devices are due to an initial passivation of defects in the a-B{sub 10}C{sub 2+x}:H{sub y} film resulting from electronic energy deposition, breaking bonds and allowing them to reform in a lower energy state, or resolving distorted icosahedron anion states.

  11. Electron instability in doped-manganites-based heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Tulina, N.A.; Sirotkin, V.V

    2004-01-01

    Electrodynamic and thermal properties of doped-manganites-based heterojunctions are numerically calculated for a model description of electron instability effects revealed in them under a strong current injection. The calculations are performed by jointly solving the thermal conduction and Poisson equations. Comparison of experimental and calculated data suggests that the effect of transport current on resistive properties of manganites-based heterojunctions is indicative of impurity-assisted phase separation in manganites. The motion of charged oxygen ions in the surface layer with high density of vacancies under the action of an electric field catalyzes phase separation.

  12. Carbazole functionalized isocyanide brushes in heterojunction photovoltaic devices

    NARCIS (Netherlands)

    Lim, E.; Gao, F.; Schwartz, E.; Schwartz, E.; Cornelissen, Jeroen Johannes Lambertus Maria; Nolte, R.J.M.; Rowan, A.E.; Greenham, N.C.; Do, L.M.

    2012-01-01

    In this work, carbazole-containing polyisocyanide (PIACz) brushes were used for photovoltaic devices. A photovoltaic device was fabricated on top of the brushes by spin-coating a suitable acceptor and evaporating an Al cathode. Devices with a poly(N-vinylcarbazole) (PVK) bulk polymer were also

  13. Materials and Devices Research of PPV-ZnO Nanowires for Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Zhang Xiao-Zhou

    2012-01-01

    Full Text Available Bulk heterojunction photovoltaic devices, which use the conjugated polymer poly(2-methoxyl-5-(2′-ethylhexyloxy-1,4-phenylenevinylene (MEH-PPV as the electron donor and crystalline ZnO nanowires as the electron acceptor, have been studied in this work. The ZnO nanowires were prepared through a chemical vapor deposition mechanism. The dissolved MEH-PPV polymer was spin-coated onto the nanowires. The scanning electron microscope images showed that the ZnO nanowires were covered with a single layer of the polymer, and these materials were used to design a heterojunction solar cell. This solar cell displayed improved performance compared with the devices that were made from only the MEH-PPV polymer. This observed improvement is correlated with the improved electron transport that is perpendicular to the plane of the film. A solar power conversion efficiency of 1.37% was achieved under an AM1.5 illumination.

  14. Fullerene-Grafted Graphene for Efficient Bulk Heterojunction Polymer Photovoltaic Devices

    Science.gov (United States)

    2011-04-22

    synergetic effects. Examples include graphene SnO2 hybrids as anode materials for batteries with improved capacity and cyclic stability,14 and Pd...S.-M.; Yoo, E.; Honma, I. Enhanced Cyclic Performance and Lithium Storage Capacity of SnO2 / Graphene Nanoporous Electro- des with Three-Dimensionally...pubs.acs.org/JPCL Fullerene-Grafted Graphene for Efficient Bulk Heterojunction Polymer Photovoltaic Devices Dingshan Yu,† Kyusoon Park,‡ Michael Durstock

  15. High efficiency solid-state sensitized heterojunction photovoltaic device

    KAUST Repository

    Wang, Mingkui

    2010-06-01

    The high molar extinction coefficient heteroleptic ruthenium dye, NaRu(4,4′-bis(5-(hexylthio)thiophen-2-yl)-2,2′-bipyridine) (4-carboxylic acid-4′-carboxylate-2,2′-bipyridine) (NCS) 2, exhibits certified 5% electric power conversion efficiency at AM 1.5 solar irradiation (100 mW cm-2) in a solid-state dye-sensitized solar cell using 2,2′,7,7′-tetrakis-(N,N-di-pmethoxyphenylamine)-9, 9′-spirobifluorene (spiro-MeOTAD) as the organic hole-transporting material. This demonstration elucidates a class of photovoltaic devices with potential for low-cost power generation. © 2010 Elsevier Ltd. All rights reserved.

  16. Photovoltaic properties of cadmium selenide–titanyl phthalocyanine planar heterojunction devices

    Energy Technology Data Exchange (ETDEWEB)

    Szostak, J.; Jarosz, G.; Signerski, R., E-mail: ryszard@mif.pg.gda.pl

    2015-07-29

    Graphical abstract: - Highlights: • CdSe/TiOPc cells harvest light practically in the whole visible range. • Two mechanism of photogeneration of charge carriers are distinguished. • Monomolecular recombination of free charge carriers is predominant. • Relatively high fill factor under monochromatic illumination was obtained. • Thickness optimization is required for the improvement of current density. - Abstract: Photovoltaic phenomenon taking place in cadmium selenide (CdSe)/titanyl phthalocyanine (TiOPc) planar heterojunction devices is described. Mechanisms of free charge carrier generation and their recombination in the dark and under illumination are analyzed, chosen photovoltaic parameters are presented.

  17. Bulk Heterojunction Solar Cell Devices Prepared with Composites of Conjugated Polymer and Zinc Oxide Nanorods

    Directory of Open Access Journals (Sweden)

    Nguyen Tam Nguyen Truong

    2017-01-01

    Full Text Available ZnO nanorods (Nrods with ~20–50 nm lengths were synthesized using an aqueous solution of zinc acetate and glacial acetic acid. Bulk heterojunction solar cells were fabricated with the structure of indium tin oxide (ITO/polyethylenedioxythiophene doped with polystyrene-sulfonic acid (PEDOT:PSS/ZnO-Nrods + polymer/electron transport layer (ETL/Al. Current density-voltage characterization of the resulting cells showed that, by adding an ETL and using polymers with a low band gap energy, the photoactive layer surface morphology and the device performance can be dramatically improved.

  18. Materials and Devices Research of PPV-ZnO Nanowires for Heterojunction Solar Cells

    OpenAIRE

    Zhang Xiao-Zhou; Jian Xi-Gao; Zu Li-Wu

    2012-01-01

    Bulk heterojunction photovoltaic devices, which use the conjugated polymer poly(2-methoxyl-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as the electron donor and crystalline ZnO nanowires as the electron acceptor, have been studied in this work. The ZnO nanowires were prepared through a chemical vapor deposition mechanism. The dissolved MEH-PPV polymer was spin-coated onto the nanowires. The scanning electron microscope images showed that the ZnO nanowires were covered with a single ...

  19. RETRACTED: Advances in colloidal quantum dot solar cells: The depleted-heterojunction device

    KAUST Repository

    Kramer, Illan J.

    2011-08-01

    Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processibility with quantum size-effect tunability to match absorption with the solar spectrum. Recent advances in CQD photovoltaics have led to 3.6% AM1.5 solar power conversion efficiencies. Here we report CQD photovoltaic devices on transparent conductive oxides and show that our devices rely on the establishment of a depletion region for field-driven charge transport and separation. The resultant depleted-heterojunction solar cells provide a 5.1% AM1.5 power conversion efficiency. The devices employ infrared-bandgap size-effect-tuned PbS colloidal quantum dots, enabling broadband harvesting of the solar spectrum. © 2010 Elsevier B.V.

  20. Device physics of polymer : fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Blom, Paul W. M.; Mihailetchi, Valentin D.; Koster, L. Jan Anton; Markov, Denis E.

    2007-01-01

    Plastic solar cells bear the potential for large-scale power generation based on materials that provide the possibility of flexible, lightweight, inexpensive, efficient solar cells. Since the discovery of the photoinduced electron transfer from a conjugated polymer to fullerene molecules, followed

  1. The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

    Energy Technology Data Exchange (ETDEWEB)

    Bovill, E.; Scarratt, N.; Griffin, J.; Buckley, A. R.; Lidzey, D. G., E-mail: d.g.lidzey@sheffield.ac.uk [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Yi, H.; Iraqi, A. [Department of Chemistry, University of Sheffield, Sheffield S3 7HF (United Kingdom); Kingsley, J. W. [Ossila Ltd., Kroto Innovation Centre, Broad Lane, Sheffield S3 7HQ (United Kingdom)

    2015-02-16

    We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC{sub 70}BM, and incorporated the different HTL materials PEDOT:PSS, MoO{sub x} and V{sub 2}O{sub 5}. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T{sub 80} lifetime of 14 500 h.

  2. Development of novel conjugated donor polymers for high-efficiency bulk-heterojunction photovoltaic devices.

    Science.gov (United States)

    Chen, Junwu; Cao, Yong

    2009-11-17

    Solar cells are one attractive method for harnessing inexhaustible clean energy from the sun. Organic photovoltaic technology is emerging as a potential competitor to silicon-based photovoltaic cells (PVCs), and their power conversion efficiencies (PCE) can now exceed 6%. Polymeric bulk-heterojunction (BHJ) PVCs, whose photoactive layer is composed of a blend of bicontinuous and interpenetrating donors and acceptors, can maximize interfacial area between the donor and the acceptor. Classic polymer donors, such as dialkoxy-substituted poly(para-phenylene vinylene)s (PPVs) and poly(3-hexylthiophene) (P3HT), have been widely investigated. However, advances in synthetic methodology provide new avenues for the development of novel conjugated polymer donors with improved power conversion efficiencies. Recently, researchers have achieved great advances in this area. This Account primarily focuses on novel donor polymers that have shown power conversion efficiencies greater than 1%. 2,1,3-Benzothiadiazole, thiophene, thieno[3,4-b]pyrazine, quinoxaline, and silole have emerged as useful heterocycles for constructing a variety of conjugated polymers for photovoltaic applications. We summarize useful information, such as molecular weights, absorption, bandgap, energy levels, and their photovoltaic performances with detailed device parameters (see comparison tables), about these novel donor polymers. We use statistical summaries to evaluate several important parameter relationships among these polymer donors including open-circuit voltage versus HOMO, power conversion efficiency versus bandgap, and power conversion efficiency versus hole mobility. Further statistical analysis of the data listed in these tables may guide further structural design and evaluation of polymer donor materials.

  3. CuSb(S,Se)2 thin film heterojunction photovoltaic devices

    Science.gov (United States)

    Welch, Adam W.

    Thin film heterojunction solar cells based on CuSb(S,Se)2 absorbers are investigated for two primary reasons. First, antimony is more abundant and less expensive than elements used in current thin film photovoltaics, In, Ga, and Te, and so, successful integration of Sb based materials offers greater diversification and scalability of solar energy. Second, the CuSb(S,Se) 2 ternary is chemically, electronically, and optically similar to the well-known, high efficiency, CuIn(S,Se)2 based materials. It is therefore postulated that the copper antimony ternaries will have similar defect tolerant electronic transport that may allow for similar highly efficient photoconversion. However, CuSb(S,Se)2 forms a layered crystal structure, different from the tetrahedral coordination found in conventional solar absorbers, due to the non-bonding lone pair of electrons on the antimony site. Thus examination of 2D antimony ternaries will lend insight into the role of structure in photoconversion processes. To address these questions, the semiconductors of interest (CuSbS 2 & CuSbSe2) were first synthesized on glass by combinatorial methods, to more quickly optimize process condi- tions. Radio-frequency (RF) magnetron co-sputtering from Sb2(S,Se)3 and Cu 2(S,Se) targets were used, without rotation, to produce chemical and flux graded libraries which were then subjected to high throughput characterization of structure (XRD), composition (XRF), conductivity (4pp), and optical absorption (UV/Vis/NIR). This approach rapidly identified processes that generated phase pure material with tunable carrier concentration by applying excess Sb 2(S,Se)3 within a temperature window bound by the volatility of Sb2(S,Se)3 and stability of the ternary phase. The resulting phase pure thin films were then incor- porated into the traditional CuInGaSe2 (CIGS) substrate photovoltaic (PV) architecture, and the resulting device performance was correlated to gradients in composition, sputter flux, absorber

  4. Recent Approaches to Controlling the Nanoscale Morphology of Polymer-Based Bulk-Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Abdulra'uf Lukman Bola

    2013-11-01

    Full Text Available The need for clean, inexpensive and renewable energy has increasingly turned research attention towards polymer photovoltaic cells. However, the performance efficiency of these devices is still low in comparison with silicon-based devices. The recent introduction of new materials and processing techniques has resulted in a remarkable increase in power-conversion efficiency, with a value above 10%. Controlling the interpenetrating network morphology is a key factor in obtaining devices with improved performance. This review focuses on the influence of controlled nanoscale morphology on the overall performance of bulk-heterojunction (BHJ photovoltaic cells. Strategies such as the use of solvents, solvent annealing, polymer nanowires (NWs, and donor–acceptor (D–A blend ratios employed to control the active-layer morphologies are all discussed.

  5. Effect of annealing on bulk heterojunction organic solar cells based on copper phthalocyanine and perylene derivative

    KAUST Repository

    Kim, Inho

    2012-02-01

    We investigated the effects of annealing on device performances of bulk heterojunction organic solar cells based on copper phthalocyanine (CuPc) and N,N′-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C6). Blended films of CuPc and PTCDI-C6 with annealing at elevated temperature were characterized by measuring optical absorption, photoluminescence, and X-ray diffraction. Enhanced molecular ordering and increments in domain sizes of donor and acceptor for the blended films were observed, and their influences on device performances were discussed. Annealing led to substantial improvements in photocurrent owing to enhanced molecular ordering and formation of percolation pathways. © 2011 Elsevier B.V. All rights reserved.

  6. Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2014-01-01

    Full Text Available Metal/semiconductor and transparent conductive oxide (TCO/semiconductor heterojunctions have emerged as an effective modality in the fabrication of photoelectric devices. This review is following a recent shift toward the engineering of TCO layers and structured Si substrates, incorporating metal nanoparticles for the development of next-generation photoelectric devices. Beneficial progress which helps to increase the efficiency and reduce the cost, has been sequenced based on efficient technologies involved in making novel substrates, TCO layers, and electrodes. The electrical and optical properties of indium tin oxide (ITO and aluminum doped zinc oxide (AZO thin films can be enhanced by structuring the surface of TCO layers. The TCO layers embedded with Ag nanoparticles are used to enhance the plasmonic light trapping effect in order to increase the energy harvesting nature of photoelectric devices. Si nanopillar structures which are fabricated by photolithography-free technique are used to increase light-active surface region. The importance of the structure and area of front electrodes and the effect of temperature at the junction are the value added discussions in this review.

  7. Amorphous and crystalline silicon based heterojunction solar cells

    Science.gov (United States)

    Schüttauf, J. A.

    2011-10-01

    saturation by H, whereas the decrease at higher temperatures is caused by H effusion. For intrinsic/n-type a-Si:H layer stacks, a record minority carrier lifetime of 13.3 ms is obtained. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed over the whole temperature range, due to the asymmetric Fermi-level dependent defect formation enthalpy in n- and p-type a-Si:H. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is observed that the intrinsic/p-layer stack is limiting device performance. Based on these findings, the solar cells were prepared in a modified order, reaching an efficiency of 16.7% (VOC = 681 mV), versus 15.8% (VOC = 659 mV) in the ‘standard’ order. Finally, transparent conductive oxide (TCO) layers are studied for application into solar cells. It is observed that both types of TCO deposition have no significant influence on the passivation properties of standard a-Si:H layer stacks forming the emitter structure in the used SHJ cells. On flat wafers, a conversion efficiency of 16.7% has been obtained when ITO is used as TCO, versus an efficiency of 16.3% for ZnO:Al; slightly lower due to increased electrical losses.

  8. High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yuhua; Xiang, Jinzhong, E-mail: jzhxiang@ynu.edu.cn [School of Physical and Astronomy, Yunnan University, Kunming 650091 (China); Tang, Libin, E-mail: scitang@163.com; Ji, Rongbin, E-mail: jirongbin@gmail.com; Zhao, Jun; Kong, Jincheng [Kunming Institute of Physics, Kunming 650223 (China); Lai, Sin Ki; Lau, Shu Ping [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong); Zhang, Kai [Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science, Suzhou 215123 (China)

    2016-08-15

    A high performance ultraviolet (UV) photodetector is receiving increasing attention due to its significant applications in fire warning, environmental monitoring, scientific research, astronomical observation, etc. The enhancement in performance of the UV photodetector has been impeded by lacking of a high-efficiency heterojunction in which UV photons can efficiently convert into charges. In this work, the high performance UV photodetectors have been realized by utilizing organic/inorganic heterojunctions based on a ZnO nanoflakes/poly (N-vinylcarbazole) hybrid. A transparent conducting polymer poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)-coated quartz substrate is employed as the anode in replacement of the commonly ITO-coated glass in order to harvest shorter UV light. The devices show a lower dark current density, with a high responsivity (R) of 7.27 × 10{sup 3 }A/W and a specific detectivity (D*) of 6.20 × 10{sup 13} cm Hz{sup 1/2}/W{sup −1} at 2 V bias voltage in ambient environment (1.30 mW/cm{sup 2} at λ = 365 nm), resulting in the enhancements in R and D* by 49% and one order of magnitude, respectively. The study sheds light on developing high-performance, large scale-array, flexible UV detectors using the solution processable method.

  9. Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bie, Ya-Qing; Liao, Zhi-Min; Wang, Peng-Wei; Zhou, Yang-Bo; Han, Xiao-Bing; Ye, Yu; Zhao, Qing; Wu, Xiao-Song; Dai, Lun; Xu, Jun; Sang, Li-Wen; Deng, Jun-Jing; Laurent, K.; Yu, Da-Peng [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Leprince-Wang, Y. [Laboratoire de Physique des Materiaux Divises et Interfaces (LPMDI), CNRS-UMR 8108, Universite Paris-Est., Marne la Vallee Cedex 2, 77454, (France)

    2010-10-08

    We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Planar heterojunction perovskite solar cell based on CdS electron transport layer

    KAUST Repository

    Abulikemu, Mutalifu

    2017-07-02

    We report on planar heterojunction perovskite solar cells employing a metal chalcogenide (CdS) electron transport layer with power conversion efficiency up to 10.8%. The CdS layer was deposited via solution-process chemical bath deposition at low-temperature (60°C). Pinhole-free and uniform thin films were obtained with good structural, optical and morphological properties. An optimal layer thickness of 60nm yielded an improved open-circuit voltage and fill factor compared to the standard TiO2-based solar cells. Devices showed a higher reproducibility of the results compared to TiO2-based ones. We also tested the effect of annealing temperature on the CdS film and the effect of CdCl2 treatment followed by high temperature annealing (410°C) that is expected to passivate the surface, thus eliminating eventual trap-states inducing recombination.

  11. Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen R.; Thompson, Mark E.; Wei, Guodan; Wang, Siyi

    2017-09-19

    A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

  12. Study of the potential energy conversion efficiency of organic solar cells based on donor/acceptor heterojunctions

    Science.gov (United States)

    Geens, Wim

    2002-01-01

    Organic solar cells can offer an appealing alternative for bulk silicon solar cells due to their attractive properties such as flexibility and possibility to apply low-cost manufacturing techniques. The different types of existing organic solar cells reported in the literature have been critically assessed in terms of performance and processability, based on which it was concluded that the concept of the donor/acceptor bulk heterojunction sandwiched between a transparent and a metal electrode has the most potential. In order to gain more insight into the charge transport properties of spin-cast photovoltaic conjugated polymer/fullerene blends, these films were incorporated into field-effect transistors to derive values for the electron and hole mobilities. Model calculations showed that increasing these mobility values in combination with the use of thicker active layers could significantly enhance the short-circuit current density of the bulk heterojunction solar cells. Optimisation of the charge transport is required and was realised in this study by choosing PPV-oligomers and C60 as well-defined building blocks to construct the donor/acceptor networks. First, these materials were spin-cast in single-layer diodes to allow full electrical characterisation, which was then compared with simulation of the devices in dark as well as under illumination. The photovoltaic performance of blended PPV-oligomer/C60 devices remained rather low due to C60-induced shunting paths and high molecular disorder. In a second part, more morphological order was obtained by using vacuum evaporation to deposit the organic materials. Besides structural characterisation of the evaporated films, the electrical behaviour of single-layer devices was investigated and the influence of interfacial layers was addressed. Photovoltaic devices based on evaporated planar heterojunctions reaching a conversion efficiency of 1.9% and exhibiting an open-circuit voltage of over 1 V were realised

  13. High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

    KAUST Repository

    Tsai, Meng-Lin

    2016-10-28

    Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.

  14. Semiconductor heterojunctions at the Conference on the Physics and Chemistry of Semiconductor Interfaces: A device physicist`s perspective

    Energy Technology Data Exchange (ETDEWEB)

    Kroemer, H. [Univ. of California, Santa Barbara, CA (United States)

    1993-07-01

    After a very slow start, heterojunctions have emerged as one of the central topics of the Conference on the Physics and Chemistry of Semiconductor Interfaces. The presentation describes this emergence, starting from such items as the electron affinity rule of conduction band offsets, Dingle`s first determination of the GaAs-(Al,Ga)As band lineups, and the first lineup theories. Some of the blind alleys in this development (85:15 Rule, Common-Anion Rule, and others) are retold by one of the participants. The treatment then turns to a few of the most recent developments, such as the emerging role of ab initio computations as a quasiexperimental tool, plus a few developments this writer finds worth speculating about. The treatment is from the perspective of a device physicist, rather than a surface scientist, and some thoughts are offered on why there is not more commonality between heterojunctions and Schottky barriers. 28 refs., 3 figs.

  15. Analysis of electrical parameters in heterojunctions based on poly 3-octylthiophene and cadmium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Salinas, Oscar H.; Lopez-Mata, C.; Hu, Hailin [Centro de investigacion en Energia, UNAM, Av.Xochicalco S/N, Temixco, Morelos, 62580 (Mexico); Nicho, M.E. [CIICAp-UAEM, Cuernavaca, Morelos (Mexico)

    2006-09-22

    Planar hybrid heterojunctions were built with poly 3-octylthiophene (P3OT) and chemical bath-deposited cadmium sulfide (CdS) thin films on a conductive glass substrate. The organic material, P3OT, acts as a light absorber and the inorganic one, CdS, as the electron acceptor. Two types of CdS films had been used: one is as-deposited and the other doped with HgCl{sub 2}. Heterojunctions were formed by casting a chemically synthesized P3OT solution onto CdS films. The P3OT film thickness was also varied for heterojunction studies. Current vs. potential (I-V) characterizations under dark and illumination conditions were performed for the P3OT/CdS heterojunctions under 88mW/cm{sup 2} irradiance level, which show photovoltaic effect with different open circuit voltage (V{sub OC}) levels, being as high as 1V for some devices. A parametric analysis of I-V curves details the effect of CdS resistivity and P3OT film thickness on series and shunt resistance of the heterojunctions. (author)

  16. Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode

    Science.gov (United States)

    Sarkar, K.; Palit, M.; Guhathakurata, S.; Chattopadhyay, S.; Banerji, P.

    2017-09-01

    Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

  17. Amorphous and crystalline silicon based heterojunction solar cells

    NARCIS (Netherlands)

    Schuttauf, J.A.|info:eu-repo/dai/nl/314118039

    2011-01-01

    In this thesis, research on amorphous and crystalline silicon heterojunction (SHJ) solar cells is described. Probably the most important feature of SHJ solar cells is a thin intrinsic amorphous silicion (a‑Si:H) layer that is deposited before depositing the doped emitter and back surface field. The

  18. Nanofiber-based bulk-heterojunction organic solar cells using coaxial electrospinning

    Energy Technology Data Exchange (ETDEWEB)

    Bedford, Nicholas M. [Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221 (United States); Department of Chemical and Materials Engineering, University of Cincinnati, Cincinnati, OH, 45221 (United States); Dickerson, Matthew B.; Drummy, Lawrence F.; Koerner, Hilmar; Singh, Kristi M.; Vasudev, Milana C.; Durstock, Michael F.; Naik, Rajesh R. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright Patterson Air Force Base, OH, 45433 (United States); Steckl, Andrew J. [Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221 (United States)

    2012-09-15

    Nanofibers consisting of the bulk heterojunction organic photovoltaic (BHJ-OPV) electron donor-electron acceptor pair poly(3-hexylthiophene):phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) are produced through a coaxial electrospinning process. While P3HT:PCBM blends are not directly electrospinnable, P3HT:PCBM-containing fibers are produced in a coaxial fashion by utilizing polycaprolactone (PCL) as an electrospinnable sheath material. Pure P3HT:PCBM fibers are easily obtained after electrospinning by selectively removing the PCL sheath with cyclopentanone (average diameter 120 {+-} 30 nm). These fibers are then incorporated into the active layer of a BHJ-OPV device, which results in improved short-circuit current densities, fill factors, and power-conversion efficiencies (PCE) as compared to thin-film devices of identical chemical composition. The best-performing fiber-based devices exhibit a PCE of 4.0%, while the best thin-film devices have a PCE of 3.2%. This increase in device performance is attributed to the increased in-plane alignment of P3HT polymer chains on the nanoscale, caused by the electrospun fibers, which leads to increased optical absorption and subsequent exciton generation. This methodology for improving device performance of BHJ-OPVs could also be implemented for other electron donor-electron acceptor systems, as nanofiber formation is largely independent of the PV material. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Device Physics and Recombination in Polymer:Fullerene Bulk-Heterojunction Solar Cells

    Science.gov (United States)

    Hawks, Steven Aaron

    My thesis focuses on improving and understanding a relatively new type of solar cell materials system: polymer:fullerene bulk-heterojunction (BHJ) blends. These mixtures have drawn significant interest because they are made from low-cost organic molecules that can be cast from solution, which makes them a potential cheap alternative to traditional solar cell materials like silicon. The drawback, though, is that they are not as efficient at converting sunlight into electricity. My thesis focuses on this issue, and examines the loss processes holding back the efficiency in polymer:fullerene blends as well as investigates new processing methods for overcoming the efficiency limitations. The first chapter introduces the subject of solar cells, and polymer:fullerene solar cells in particular. The second chapter presents a case study on recombination in the high-performance PBDTTT polymer family, wherein we discovered that nongeminate recombination of an anti-Langevin origin was the dominant loss process that ultimately limited the cell efficiency. Electroluminescence measurements revealed that an electron back-transfer process was prevalent in active layers with insufficient PC71BM content. This work ultimately made strong headway in understanding what factors limited the relatively unexplored but highly efficient PBDTTT family of polymers. In the next chapter, I further explore the recombination mechanisms in polymer:fullerene BHJs by examining the dark diode ideality factor as a function of temperature in several polymer:fullerene materials systems. By re-deriving the diode law for a polymer:fullerene device with Shockley-Read-Hall recombination, we were able to confirm that trap-assisted recombination through an exponential band-tail of localized states is the dominant recombination process in many polymer:fullerene active layers. In the third chapter, I present a generalized theoretical framework for understanding current transients in planar semiconductor devices

  20. Nanostructured Electrodes For Organic Bulk Heterojunction Solar Cells: Model Study Using Carbon Nanotube Dispersed Polythiophene-fullerene Blend Devices

    Energy Technology Data Exchange (ETDEWEB)

    Nam, C.Y.; Wu, Q.; Su, D.; Chiu, C.-y; Tremblay, N.J.; Nuckolls, C,; Black, C.T.

    2011-09-19

    We test the feasibility of using nanostructured electrodes in organic bulk heterojunction solar cells to improve their photovoltaic performance by enhancing their charge collection efficiency and thereby increasing the optimal active blend layer thickness. As a model system, small concentrations of single wall carbon nanotubes are added to blends of poly(3-hexylthiophene): [6,6]-phenyl-C{sub 61}-butyric acid methyl ester in order to create networks of efficient hole conduction pathways in the device active layer without affecting the light absorption. The nanotube addition leads to a 22% increase in the optimal blend layer thickness from 90 nm to 110 nm, enhancing the short circuit current density and photovoltaic device efficiency by as much as {approx}10%. The associated incident-photon-to-current conversion efficiency for the given thickness also increases by {approx}10% uniformly across the device optical absorption spectrum, corroborating the enhanced charge carrier collection by nanostructured electrodes.

  1. A Solar-Blind UV Detector Based on Graphene-Microcrystalline Diamond Heterojunctions.

    Science.gov (United States)

    Wei, Minsong; Yao, Kaiyuan; Liu, Yumeng; Yang, Chen; Zang, Xining; Lin, Liwei

    2017-09-01

    An ultraviolet detector is demonstrated through a whole-wafer, thin diamond film transfer process to realize the heterojunction between graphene and microcrystalline diamond (MCD). Conventional direct transfer processes fail to deposit graphene onto the top surface of the MCD film. However, it is found that the 2 µm thick MCD diamond film can be easily peeled off from the growth silicon substrate to expose its smooth backside for the graphene transfer process for high-quality graphene/MCD heterojunctions. A vertical graphene/MCD/metal structure is constructed as the photodiode device using graphene as the transparent top electrode for solar-blind ultraviolet sensing with high responsivity and gain factor. As such, this material system and device architecture could serve as the platform for next-generation optoelectronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. 2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates

    Science.gov (United States)

    Jankovic, N. D.; O'Neill, A.

    2004-02-01

    A novel strained-Si pnp heterojunction bipolar transistor (HBT) design, suitable for virtual substrate technology, is proposed that is inherently free from the detrimental valence band barrier effects usually encountered in conventional SiGe pnp HBTs on silicon. It takes advantage of the heterojunction formed between a strained-Si layer and a relaxed SiGe buffer (virtual substrate), whose associated valence band offset appears favorable for minority hole transport at the base/collector junction. From two-dimensional (2D) numerical simulation, it is found that the newly proposed strained-Si pnp HBT substantially outperforms the equivalent BJT on a silicon substrate in terms of DC and high-frequency characteristics. A threefold increase in maximum current gain β, a fourfold improvement in peak ft and a 2.5 times increase in peak fmax are predicted for strained-Si pnp HBTs on a 50% Ge virtual substrate in comparison with identical conventional silicon pnp BJTs.

  3. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He

    2014-08-11

    Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

  4. Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

    Science.gov (United States)

    Rahim, Ishrat; Shah, Mutabar; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Shah Haider

    2017-11-01

    The use of graphene in electronic devices is becoming attractive due to its inherent scalability and is thus well suited for flexible electronic devices. Here we present the electrical characterization of heterojunction diode, based on the nanocomposite of graphene (G) with silver nanoparticles (Ag NPs), at room temperature. The diode was fabricated by depositing nanocomposite on the n-Si substrate. The current - voltage (I - V) characteristic of the fabricated junction shows rectifying behavior similar to a Schottky junction. The junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (ϕb) has been extracted, using various methods, from the experimentally obtained I - V data. The measured values of n, Rs and ϕb are 3.86, 45 Ω and 0.367 eV, respectively, as calculated from the I - V curve. The numerical values of these parameters calculated by different methods are in good agreement with each other showing the consistency of the applied calculating techniques. The conduction mechanism of the fabricated diode seems to have been dominated by the Trap Charge Limited Conduction (TCLC) behavior. The energy distribution of interface states density determined from forward bias I - V characteristic shows an exponential decrease with bias from 27 × 1013 cm-2 eV-1 at (Ec - 0.345) eV to 3 × 1013 cm-2 eV-1at (Ec - 0.398) eV.

  5. Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si

    Science.gov (United States)

    Rakhshani, A. E.

    2010-11-01

    The importance of silicon based optoelectronic devices is due to the well developed silicon technology and its potential for device integration. ZnO/Si light emitting diodes reported in the literature are based mainly on ZnO films grown by the vapor-phase techniques. Electrodeposition, a cost-effective and simple method, has not been explored adequately for the fabrication of such devices. In this study, ZnO films were electrodeposited on the (100) plane of highly B-doped p-Si substrates. Heterojunction devices (p-n and p-i-n) were constructed and characterized by means of current-voltage, capacitance-voltage, photocurrent spectroscopy, photoluminescence, and electroluminescence measurements. Electrodeposition yields compact films with a native donor density ˜1017 cm-3. Diffusion of boron from Si into ZnO, during an annealing process, yields graded p-n junctions with enhanced electroluminescence. Devices exhibit a reasonably good photoresponse in the ultraviolet-blue range. The absorption of subband gap photons in ZnO shows an Urbach tail with a characteristic energy of 115 meV. The absorption and emission of light involves two prominent defect levels in ZnO, namely, L1 and E1.

  6. Bis(tri-n-hexylsilyl oxide) silicon phthalocyanine: a unique additive in ternary bulk heterojunction organic photovoltaic devices.

    Science.gov (United States)

    Lessard, Benoît H; Dang, Jeremy D; Grant, Trevor M; Gao, Dong; Seferos, Dwight S; Bender, Timothy P

    2014-09-10

    Previous studies have shown that the use of bis(tri-n-hexylsilyl oxide) silicon phthalocyanine ((3HS)2-SiPc) as an additive in a P3HT:PC61BM cascade ternary bulk heterojunction organic photovoltaic (BHJ OPV) device results in an increase in the short circuit current (J(SC)) and efficiency (η(eff)) of up to 25% and 20%, respectively. The previous studies have attributed the increase in performance to the presence of (3HS)2-SiPc at the BHJ interface. In this study, we explored the molecular characteristics of (3HS)2-SiPc which makes it so effective in increasing the OPV device J(SC) and η(eff. Initially, we synthesized phthalocyanine-based additives using different core elements such as germanium and boron instead of silicon, each having similar frontier orbital energies compared to (3HS)2-SiPc and tested their effect on BHJ OPV device performance. We observed that addition of bis(tri-n-hexylsilyl oxide) germanium phthalocyanine ((3HS)2-GePc) or tri-n-hexylsilyl oxide boron subphthalocyanine (3HS-BsubPc) resulted in a nonstatistically significant increase in JSC and η(eff). Secondly, we kept the silicon phthalocyanine core and substituted the tri-n-hexylsilyl solubilizing groups with pentadecyl phenoxy groups and tested the resulting dye in a BHJ OPV. While an increase in JSC and η(eff) was observed at low (PDP)2-SiPc loadings, the increase was not as significant as (3HS)2-SiPc; therefore, (3HS)2-SiPc is a unique additive. During our study, we observed that (3HS)2-SiPc had an extraordinary tendency to crystallize compared to the other compounds in this study and our general experience. On the basis of this observation, we have offered a hypothesis that when (3HS)2-SiPc migrates to the P3HT:PC61BM interface the reason for its unique performance is not solely due to its frontier orbital energies but also might be due to a high driving force for crystallization.

  7. The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO2/NiO pn heterojunction and Ni/Au composite electrode

    Science.gov (United States)

    Zhang, Dezhong; Liu, Chunyu; Xu, Ruiliang; Yin, Bo; Chen, Yu; Zhang, Xindong; Gao, Fengli; Ruan, Shengping

    2017-09-01

    A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO2/NiO pn heterojunction was demonstrated and exhibited lower dark current (I dark) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the fabrication of the UV photodetector. In dark, the depleted pn heterojunction structure effectively reduced the majority carrier density in TiO2/NiO films, demonstrating a high resistance state and contributing to a lower I dark of 0.033 nA, two orders of magnitude lower than that of the single-material devices. Under UV illumination, the interface self-depleting effect arising from the dissociation and accumulation of photogenerated carriers was eliminated, ensuring loss-free responsivity (R) and a remarkable specific detectivity (D*) of 1.56 × 1014 cm Hz1/2 W-1 for the optimal device. The device with the structure of ITO/TiO2/NiO/Au was measured to prove the mechanisms of interface self-depleting in dark and elimination of the depletion layer under UV illumination. Meanwhile, shortened decay time was achieved in the pn heterojunction UV photodetector. This suggests that the self-depleting devices possess the potential to further enhance photodetection performance.

  8. Discrepancy of optimum ratio in bulk heterojunction photovoltaic devices: initial cell efficiency vs long-term stability.

    Science.gov (United States)

    Park, Hyunmin; Lee, Keel Yong; Kim, Wanjung; Shin, Hee-Won; Wang, Dong Hwan; Ahn, Tae Kyu; Park, Jong Hyeok

    2013-03-13

    Organic photovoltaic devices are difficult to commercialize because of their vulnerability to chemical degradation related with oxygen and water and to physical degradation with aging at high temperatures. We investigated the photophysical degradation behaviors of a series of poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PC60BM) bulk heterojunctions (BHJs) as a model system according to the donor-acceptor ratio. We found that the optimum P3HT:PC60BM ratio in terms of long-term stability differs from that in terms of initial cell efficiency. On the basis of cell performance decays and time-resolved photoluminescence measurements, we investigated the effects of oxygen and material self-aggregation on the stability of an organic photovoltaic device. We also observed the changes in morphological geometry and analyzed the surface elements to verify the mechanisms of degradation.

  9. Solution-processed bulk-heterojunction solar cells based on monodisperse dendritic oligothiophenes

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chang-Qi; Schikora, Martin C.; Baeuerle, Peter [Institute of Organic Chemistry II and Advanced Materials, Ulm University (Germany); Fonrodona, Marta; Wienk, Martijn M.; Janssen, Rene A.J. [Molecular Materials and Nanosystems, Eindhoven University of Technology (Netherlands)

    2008-10-23

    A novel family of soluble conjugated dendritic oligothiophenes (DOTs) as monodisperse 3D macromolecular architectures was characterized with respect to optical and redox properties in solution and in solid films. Band gaps of 2.5-2.2 eV, typical for organic semiconductors, were determined as well as HOMO/LUMO energy levels ideal for efficient electron transfer to acceptors such as [6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) identifying them as suitable materials for solar cell applications. Solution-processed bulk-heterojunction solar cells using DOTs as electron donor and PCBM as acceptor were prepared and investigated. High open-circuit voltages V{sub OC} of 1.0 V and power-conversion efficiencies up to 1.72% were obtained for the DOT-based devices. The higher generations DOTs provide the highest efficiencies. Based on the monodispersity of the DOTs, an analysis of the molar ratio between donor and acceptor in the blended film was possible leading to an optimal value of five to six thiophene units per PCBM. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  10. Device Physics and Recombination in Polymer:Fullerene Bulk-Heterojunction Solar Cells

    OpenAIRE

    Hawks, Steven

    2015-01-01

    My thesis focuses on improving and understanding a relatively new type of solar cell materials system: polymer:fullerene bulk-heterojunction (BHJ) blends. These mixtures have drawn significant interest because they are made from low-cost organic molecules that can be cast from solution, which makes them a potential cheap alternative to traditional solar cell materials like silicon. The drawback, though, is that they are not as efficient at converting sunlight into electricity. My thesis focus...

  11. Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction.

    Science.gov (United States)

    Guo, Daoyou; Liu, Han; Li, Peigang; Wu, Zhenping; Wang, Shunli; Cui, Can; Li, Chaorong; Tang, Weihua

    2017-01-18

    A solar-blind photodetector based on β-Ga2O3/NSTO (NSTO = Nb:SrTiO3) heterojunctions were fabricated for the first time, and its photoelectric properties were investigated. The device presents a typical positive rectification in the dark, while under 254 nm UV light illumination, it shows a negative rectification, which might be caused by the generation of photoinduced electron-hole pairs in the β-Ga2O3 film layer. With zero bias, that is, zero power consumption, the photodetector shows a fast photoresponse time (decay time τd = 0.07 s) and the ratio Iphoto/Idark ≈ 20 under 254 nm light illumination with a light intensity of 45 μW/cm2. Such behaviors are attributed to the separation of photogenerated electron-hole pairs driven by the built-in electric field in the depletion region of β-Ga2O3 and the NSTO interface, and the subsequent transport toward corresponding electrodes. The photocurrent increases linearly with increasing the light intensity and applied bias, while the response time decreases with the increase of the light intensity. Under -10 V bias and 45 μW/cm2 of 254 nm light illumination, the photodetector exhibits a responsivity Rλ of 43.31 A/W and an external quantum efficiency of 2.1 × 104 %. The photo-to-electric conversion mechanism in the β-Ga2O3/NSTO heterojunction photodetector is explained in detail by energy band diagrams. The results strongly suggest that a photodetector based on β-Ga2O3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.

  12. Design, fabrication, and characterization of polymer based bulk heterojunction solar cells with enhanced efficiencies

    Science.gov (United States)

    Lu, Haiwei

    Polymer based bulk heterojunction (BHJ) solar cells offer promising technological advantages for actualization of low-cost and large-area fabrication on flexible substrates. To reach the envisaged market entry figure of 10% power conversion efficiency (PCE), it is crucial that more solar energy is utilized in the active layer, requiring both higher energy conversion efficiency and expansion of the absorption spectrum of the active layer to near infrared (NIR) region. The research introduced in this dissertation is an effort to increase PCE of solar cells from the aforementioned two directions. In the first method, carbon nanotubes (CNTs) were incorporated into polymer-fullerene BHJ solar cells to increase the hole-collection efficiency. Devices with CNT monolayer networks placed at different positions were fabricated, and the impact of CNTs on device performance was studied. It was demonstrated that CNTs placed on the hole-collection side of the device resulted in optimized performance, with PCE increased from 4% to 4.9%. To realize the controlled deposition of a uniform layer of CNTs on different positions, a mild plasma treatment of the active-layer was employed, and the influence of plasma treatment on device performance was also studied. In the second strategy, I developed an approach to expand the absorption spectrum to NIR region. In this case, hybrid polymer based BHJ solar cells composed of pyridine-capped PbS (PbS-py) quantum dots (QDs) and poly(3-hexylthiophene) (P3HT) were proposed. With pyridines as capping ligands, devices showed superior performance compared to with conventionally used oleate agents. PbS QDs with bandgaps of ˜1.13-1.38 eV offered the advantage of energetically favorable charge separation between P3HT and PbS QDs for photoexcitons in both visible and NIR regions. It was also found that thermal annealing leads to the removal of excess and interfacial pyridine ligands in polymer/QDs composites, and thus provides intimate electrical

  13. Characterization, simulation and optimization of type-II gallium arsenic antimonide-based double heterojunction bipolar transistors

    Science.gov (United States)

    Tao, Nick Gengming

    In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk

  14. Graphene-Based Heterojunction between Two Topological Insulators

    Directory of Open Access Journals (Sweden)

    Oleksii Shevtsov

    2012-07-01

    Full Text Available Quantum Hall (QH and quantum spin Hall (QSH phases have very different edge states and, when going from one phase to the other, the direction of one edge state must be reversed. We study this phenomenon in graphene in the presence of a strong perpendicular magnetic field on top of a spin-orbit (SO-induced QSH phase. We show that, below the SO gap, the QSH phase is virtually unaffected by the presence of the magnetic field. Above the SO gap, the QH phase is restored. An electrostatic gate placed on top of the system allows the creation of a QSH-QH junction which is characterized by the existence of a spin-polarized chiral state, propagating along the topological interface. We find that such a setup naturally provides an extremely sensitive spin-polarized current switch which could pave the way to novel spin-based electronic devices.

  15. Nanocomposite-Based Bulk Heterojunction Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Bich Phuong Nguyen

    2014-01-01

    Full Text Available Photovoltaic devices based on nanocomposites composed of conjugated polymers and inorganic nanocrystals show promise for the fabrication of low-cost third-generation thin film photovoltaics. In theory, hybrid solar cells can combine the advantages of the two classes of materials to potentially provide high power conversion efficiencies of up to 10%; however, certain limitations on the current within a hybrid solar cell must be overcome. Current limitations arise from incompatibilities among the various intradevice interfaces and the uncontrolled aggregation of nanocrystals during the step in which the nanocrystals are mixed into the polymer matrix. Both effects can lead to charge transfer and transport inefficiencies. This paper highlights potential strategies for resolving these obstacles and presents an outlook on the future directions of this field.

  16. pH modulated graphene based tin oxide heterovalent heterojunction nanocomposites with photocatalytic application

    Science.gov (United States)

    Nanakkal, A. R.; Alexander, L. K.

    2017-05-01

    The possibility of introducing pH during synthesis as a modulating variable to develop different combinations of heterovalent cum heterojunction tin oxides on 2D scaffold graphene material is explored. The XRD and Raman spectroscopy characteristic studies confirm successful implementation of the design. The Photocatalytic activity of the graphene based nanocomposites aimed at water purification in visible light also determined as a vindicate application.

  17. Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode

    Directory of Open Access Journals (Sweden)

    Carlos Alvarado Chavarin

    2018-02-01

    Full Text Available Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n-a-Si:H layers deposited by very high frequency (140 MHz plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μ S was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.

  18. Bulk heterojunction organic photovoltaic based on polythiophene-polyelectrolyte carbon nanotube composites

    Energy Technology Data Exchange (ETDEWEB)

    Reyes-Reyes, M. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico); Lopez-Sandoval, R. [Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas 4a. Seccion, San Luis Potosi 78216 (Mexico); Liu, J.; Carroll, D.L. [Center for Nanotechnology and Molecular Materials, Wake Forest University, Winston-Salem, NC (United States)

    2007-09-22

    It is shown that carbon nanotubes can be used to enhance carrier mobility for efficient removal of the charges in thin film polymer-conjugated/fullerene photovoltaic devices. The fabricated photovoltaic devices consist of poly(3-octylthiophene) (P3OT) polymer blended with undoped multiwalled carbon nanotubes (MWNTs) and carbon nanotubes doped with nitrogen (CNx-MWNTs). Nanophase formation and dispersion problems associated with the use of carbon nanotubes in polymer devices were addressed through the generation of functional groups and electrostatic attaching of the polyelectrolyte poly(dimethyldiallylamine) chloride (PDDA) in both MWNTs and CNx-MWNT systems. The resultant nanophase was highly dispersed allowing for excellent bulk heterojunction formation. Our results indicate that CNx-MWNTs enhance the efficiency of P3OT solar cells in comparison with MWNTs. (author)

  19. Fluorenone-based molecules for bulk-heterojunction solar cells: synthesis, characterization, and photovoltaic properties

    Energy Technology Data Exchange (ETDEWEB)

    Lincker, Frederic; Delbosc, Nicolas; Billon, Martial; Pron, Adam [Laboratoire d' Electronique Moleculaire Organique et Hybride (LEMOH), UMR5819-SPrAM (CEA-CNRS-University Grenoble I) INAC CEA-Grenoble (France); Bailly, Severine; Bettignies, Remi de [Laboratoire Cellules Solaires, DRT-LITEN-GENEC-LCS, INES Savoie-Technolac Chambery (France); Demadrille, Renaud [Laboratoire d' Electronique Moleculaire Organique et Hybride (LEMOH), UMR5819-SPrAM (CEA-CNRS-University Grenoble I) INAC CEA-Grenoble (France); Laboratoire Cellules Solaires, DRT-LITEN-GENEC-LCS, INES Savoie-Technolac Chambery (France)

    2008-11-10

    A series of four conjugated molecules consisting of a fluorenone central unit symmetrically coupled to different oligothiophene segments are conceptually designed and synthesized to provide new electroactive materials for application in photovoltaic devices. The combination of electron-donating oligothiophene building blocks with an electron-accepting fluorenone unit results in the emergence of a new band assigned to an intramolecular charge transfer transition that gives rise to the extension of the absorption spectral range of the resulting molecules. Detailed spectroscopic and voltammetric investigations show that all studied molecules have highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) level positions, which make them good candidates for the application as electron-donors in bulk-heterojunction photovoltaic cells, with (6,6)-phenyl-C61-butyric acid methyl ester (PCBM)-C{sub 60} as electron acceptor component. Moderate device performances, with power conversion efficiencies (PCEs) comprised between 0.3 and 0.6%, were obtained with rigid molecules, containing either the bridging units between the thiophene rings, i.e., (2,7-bis(4,4'-dioctyl)-cyclopenta[2,1-b:3,4-b']dithiophen-2-yl)-fluoren-9-one (SCPTF) and 2,7-bis(4-(dioctylmethylene)-cyclopenta[2,1-b:3,4-b']dithiophen-5-yl)-fluoren-9-one (MCPTF) or a vinylene unit 2,7-bis(5-[(E)-1,2-bis(3-octylthien-2-yl)ethylene])-fluoren-9-one (TVF), whereas with (2,7-bis-(3,3'''-dioctyl-[2,2';5',2'';5'',2'''])quaterthiophen-5-yl)-fluoren-9-one (QTF) PCE up to 1.2% (under AM 1.5 illumination, 100 mW cm{sup -2}, active area 0.28 cm{sup 2}) was obtained. The strong {pi}-stacking interactions in the solid state for this oligomer leading to improved morphology could explain the good performances of QTF-based devices, which rank among the highest recorded for non-polymeric materials. Consequently, fluorenone-based

  20. Enhanced photocatalytic performance of TiO{sub 2} nanotube based heterojunction photocatalyst via the coupling of graphene and FTO

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Xiaoyou [College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Yu, Jianyuan [College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Department of Environmental and Chemical Engineering, Tangshan University, Tangshan 063000 (China); Wang, Likun; Fu, Chen; Wang, Jixia; Wang, Li [College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Zhao, Hongli, E-mail: zhaohongli@ysu.edu.cn [College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); State Key Laboratory of Metastable Materials Science and Technology, Qinhuangdao 066004 (China); Yang, Jingkai, E-mail: yangjk@ysu.edu.cn [National Defense Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2017-08-15

    Highlights: • The rGO-TONT composites have been deposited onto FTO. • Photocatalytic reaction rate shows 3 times greater than TONT. • Chemical interaction between rGO and TONT was analyzed. • Electron transfer process in rGO-TONT/FTO heterojunction was discussed. - Abstract: The TiO{sub 2} nanotube (TONT) based heterojunction photocatalyst was developed via the coupling of reduced graphene oxide (rGO) and SnO{sub 2}:F film (FTO). Based on the characterization of Raman analysis, XRD, SEM, TEM, XPS and ESR, the crystal phase, morphology, heterojunction interfacial interaction and the photoinduced electron chemical environment of the samples are studied. In the photodegradation of methylene blue (MB) solution under UV irradiation, the rGO-TONT/FTO heterojunction photocatalyst exhibits the improved photocatalytic reaction rate, 3 times greater than that of pure TONT. The enhanced photocatalytic mechanism was discussed by PL. The effectively separate charge in heterojunction structure of rGO-TONT/FTO is responsible for the enhanced photocatalytic activity. Wherein, the abundant oxygen vacancies at TiO{sub 2} surface and the chemically bonded interface in rGO-TONT heterojunction also contributes to the interfacial electron transfer. Besides, the introduction of rGO enhanced its optical absorption capacity.

  1. Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics

    KAUST Repository

    Nogay, Gizem

    2016-09-26

    Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) values due to a high contact resistivity. In this study, we show that the replacement of doped amorphous silicon with nanocrystalline silicon is beneficial for device performance. Optically, we observe an improved short-circuit current density when these layers are applied to the front side of the device. Electrically, we observe a lower contact resistivity, as well as higher FF. Importantly, our cell parameter analysis, performed in a temperature range from -100 to +80 °C, reveals that the use of hole-collecting p-type nanocrystalline layer suppresses the carrier transport barrier, maintaining FF s in the range of 70% at -100 °C, whereas it drops to 40% for standard amorphous doped layers. The same analysis also reveals a saturation onset of the open-circuit voltage at -100 °C using doped nanocrystalline layers, compared with saturation onset at -60 °C for doped amorphous layers. These findings hint at a reduced importance of the parasitic Schottky barrier at the interface between the transparent electrodes and the selective contact in the case of nanocrystalline layer implementation. © 2011-2012 IEEE.

  2. Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

    Science.gov (United States)

    Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

    2015-09-07

    Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Organic semiconductor heterojunctions and its application in organic light-emitting diodes

    CERN Document Server

    Ma, Dongge

    2017-01-01

    This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

  4. Characterization of p-type wide band gap transparent oxide for heterojunction devices

    Science.gov (United States)

    Lim, Sang-Hyun

    acceptor, but beyond the low solubility limit act as defect centers. Transparent p-CuCrO2/n-ZnO heterojunction diodes showing rectifying current-voltage characteristics were fabricated. The forward to reverse bias current ratio was estimated as ˜128 and ˜108 at +/-1V and +/-2V, respectively. Built-in voltages of p-CuCrO2/n-ZnO heterojunctions discerned from small signal capacitance measurement are 1.27 and 0.67V, attributed to the alignment of Fermi level and distribution of interface trap states, respectively.

  5. DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region

    Science.gov (United States)

    Chang, Yang-Hua; Cheng, Zong-Tai

    2011-07-01

    This paper presents the DC parameter extraction of the equivalent circuit model in an InP-InGaAsSb double heterojunction bipolar transistor (HBT). The non-ideal collector current is modeled by a non-ideal doping distribution in the base region. Then several consequent non-ideal effects, which have always been neglected in typical HBTs, are studied using Medici device simulator. Moreover, the associated DC parameters of VBIC model are extracted accordingly. The equivalent circuit model is in good agreement with the measured data in I C- V CE characteristics.

  6. Red light sensitive heterojunction organic field-effect transistors based on neodymium phthalocyanine as photosensitive layer

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Wenli; Tang, Yu [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Yao, Bo [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Department of Physics, Shaoxing University, Shaoxing 312000 (China); Zhou, Maoqing; Luo, Xiao; Li, Yao; Zhong, Junkang; Sun, Lei [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Peng, Yingquan, E-mail: yqpeng@lzu.edu.cn [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China)

    2015-08-31

    Compared with organic photodiodes, photoresponsive organic field-effect transistors (photOFETs) exhibit higher sensitivity and lower noise. The performance of photOFETs based on conventional single layer structure is generally poor due to the low carrier mobility of the active channel materials. We demonstrate a high performance photOFET operating in red light with a structure of C60/neodymium phthalocyanine (NdPc{sub 2}) planar heterojunction. PhotOFETs based on single-layer NdPc{sub 2} and C60/NdPc{sub 2} heterojunction (denoted as NdPc{sub 2}-photOFETs and C60/NdPc{sub 2}-photOFETs, respectively) were fabricated and characterized. It is concluded that the photOFETs with heterojunction structure showed superior performance compared to that of single layer photOFETs. And for red light with a wavelength of 655 nm, C60/NdPc{sub 2}-photOFETs exhibited a large photoresponsivity of ~ 0.8 A/W, which is approximately 62 times larger than that of NdPc{sub 2}-photOFETs under the same conditions. The high performance of C60/NdPc{sub 2}-photOFETs is attributed to its high light absorption coefficient, high exciton dissociation efficiency and high carrier mobility. - Highlights: • The mobility of light-sensitive organic materials is generally low. • We fabricated C60/NdPc{sub 2} photoresponsive organic field-effect transistors (photOFETs). • The performance of C60/NdPc{sub 2} photOFETs is superior than single-layer NdPc{sub 2} photOFETs. • C60/NdPc{sub 2} photOFETs exhibited a large photoresponsivity of ~ 0.8 A/W for red light.

  7. Spatially inhomogeneous photoluminescence-voltage hysteresis in planar heterojunction perovskite-based solar cells

    Science.gov (United States)

    Xu, Zhihua; Edgeton, Anthony; Costello, Sydney

    2017-11-01

    Spatially resolved photoluminescence (PL) of methylammonium lead iodide (MAPbI3) films in planar heterojunction solar cells is probed by time-resolved confocal microscopy to study the interface effect on PL intensity-voltage (PL-V) hysteresis. Negligible PL-V hysteresis is observed at the interfacial area, while significant hysteresis is observed in the bulk film. PL lifetime imaging of the perovskite device reveals inhomogeneous charge extraction due to variation of the interfacial contact quality. Poor interfacial contact leads to more severe PL-V hysteresis in the bulk perovskite film. The PL-V characteristics also suggest that voltage-driven ion migration may lead to redistribution of charge traps, and consequently affect the nonradiative charge recombination and the PL intensity in MAPbI3 films.

  8. Optoelectrical Properties of a Heterojunction with Amorphous InGaZnO Film on n-Silicon Substrate

    Science.gov (United States)

    Jiang, D. L.; Ma, X. Z.; Li, L.; Xu, Z. K.

    2017-10-01

    An a-IGZO/ n-Si heterojunction device has been fabricated at room temperature by depositing amorphous InGaZnO (a-IGZO) film on n-type silicon substrate by plasma-assisted pulsed laser deposition and its optoelectrical properties studied in detail. The heterojunction showed distinct rectifying characteristic with rectification ratio of 1.93 × 103 at ±2 V bias and reverse leakage current density of 1.6 × 10-6 A cm-2 at -2 V bias. More interestingly, the heterojunction not only showed the characteristic of unbiased photoresponse, but could also detect either ultraviolet or ultraviolet-visible light by simply changing the polarity of the bias applied to the heterojunction. The variable photoresponse phenomenon and the charge transport mechanisms in the heterojunction are explained based on the energy band diagram of the heterojunction.

  9. Bulk Heterojunction Solar Cells Based on Blends of Conjugated Polymers with II–VI and IV–VI Inorganic Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Ryan Kisslinger

    2017-01-01

    Full Text Available Bulk heterojunction solar cells based on blends of quantum dots and conjugated polymers are a promising configuration for obtaining high-efficiency, cheaply fabricated solution-processed photovoltaic devices. Such devices are of significant interest as they have the potential to leverage the advantages of both types of materials, such as the high mobility, band gap tunability and possibility of multiple exciton generation in quantum dots together with the high mechanical flexibility and large molar extinction coefficient of conjugated polymers. Despite these advantages, the power conversion efficiency (PCE of these hybrid devices has remained relatively low at around 6%, well behind that of all-organic or all-inorganic solar cells. This is attributed to major challenges that still need to be overcome before conjugated polymer–quantum dot blends can be considered viable for commercial application, such as controlling the film morphology and interfacial structure to ensure efficient charge transfer and charge transport. In this work, we present our findings with respect to the recent development of bulk heterojunctions made from conjugated polymer–quantum dot blends, list the ongoing strategies being attempted to improve performance, and highlight the key areas of research that need to be pursued to further develop this technology.

  10. Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE

    Science.gov (United States)

    Riaz, Muhammad; Earles, S. K.; Kadhim, Ahmed; Azzahrani, Ahmad

    The computer analysis of tandem solar cell, c-Si/a-Si:H/μc-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12eV, 1.50eV and 1.70eV, respectively. First, single junction solar cell with both a-Si and μc-SiGe absorbing layers are designed and compared. The thickness for both layers are kept the same. In a single junction, solar cell with a-Si absorbing layer, the fill factor and the efficiency are noticed as FF = 78.98%, and η = 6.03%. For μc-SiGe absorbing layer, the efficiency and fill factor are increased as η = 7.06% and FF = 84.27%, respectively. Second, for tandem thin film solar cell c-Si/a-Si:H/μc-SiGe, the fill factor FF = 81.91% and efficiency η = 9.84% have been noticed. The maximum efficiency for both single junction thin film solar cell c-Si/μc-SiGe and tandem solar cell c-Si/a-Si:H/μc-SiGe are improved with check board surface design for light trapping.

  11. Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices

    Science.gov (United States)

    Bhat, Thirumaleshwara N.; Pandey, B. K.; Krupanidhi, S. B.

    2017-07-01

    We report on the ferroelectric polarization-induced switchable interfacial coupling modulations in BaTiO3/GaN heterojunction transport behaviour. The ferroelectric barium titanate, BaTiO3 (BTO) was integrated with polar semiconductor gallium nitride (GaN). BTO with a tetragonal structure was deposited on a wurtzite (0 0 0 1) epitaxial GaN/c-Al2O3 substrate by pulsed laser deposition, which was further confirmed by x-ray diffraction and Raman spectroscopy. BTO/GaN heterojunctions with resistive switching behaviour exhibited modulations in transport characteristics due to the interfacial coupling. The ferroelectric nature and interfacial coupling effect of this heterojunction was confirmed with the help of piezo-response force microscopy. A valence band offset of 0.82 eV and conduction band offset of 0.62 eV were obtained for BTO/GaN heterojunctions by x-ray photo-electron spectroscopy. This interfacial coupling phenomenon was analysed and its effect on the carrier conduction in the heterojunction was investigated by band alignment studies.

  12. Large-Area, Transparent And Conductive Graphene Electrode For Bulk-Heterojunction Photovoltaic Devices

    Science.gov (United States)

    Choe, Minhyeok; Lee, Byoung Hoon; Jo, Gunho; Park, June; Park, Woojin; Lee, Sangchul; Hong, Woong-Ki; Seong, Maeng-Je; Kahng, Yung Ho; Lee, Kwanghee; Lee, Takhee

    2011-12-01

    We present application results of synthesized graphene films as transparent and conductive electrodes of organic photovoltaic devices. The graphene films were synthesized by chemical vapor deposition (CVD) technique on nickel substrates and showed a low sheet resistance of ˜605 Ω/⃞ and transmittance of 87% in the visible wavelength range. The performance of graphene-applied organic photovoltaic cell was enhanced by intermediating TiOX layer to yield an overall power conversion efficiency of 2.60% which is the higher efficiency among the efficiencies of photovoltaic cells with graphene electrodes. Our demonstration of highly efficient graphene-adopted photovoltaic cells may foster thrusting the fast-progressing graphene technology into the practical realm of organic photovoltaic cells.

  13. Neat C₇₀-based bulk-heterojunction polymer solar cells with excellent acceptor dispersion.

    Science.gov (United States)

    Gasparini, Nicola; Righi, Sara; Tinti, Francesca; Savoini, Alberto; Cominetti, Alessandra; Po, Riccardo; Camaioni, Nadia

    2014-12-10

    The replacement of common fullerene derivatives with neat-C70 could be an effective approach to restrain the costs of organic photovoltaics and increase their sustainability. In this study, bulk-heterojunction solar cells made of neat-C70 and low energy-gap conjugated polymers, PTB7 and PCDTBT, are thoroughly investigated and compared. Upon replacing PC70BM with C70, the mobility of positive carriers in the donor phase is roughly reduced by 1 order of magnitude, while that of electrons is only slightly modified. It is shown that the main loss mechanism of the investigated neat-C70 solar cells is a low mobility-lifetime product. Nevertheless, PCDTBT:C70 devices undergo a limited loss of 7.5%, compared to the reference PCDTBT:PC70BM cells, reaching a record efficiency (4.44%) for polymer solar cells with unfunctionalized fullerenes. The moderate efficiency loss of PCDTBT:C70 devices, due to an unexpected excellent miscibility of PCDTBT:C70 blends, demonstrates that efficient solar cells made of neat-fullerene are possible. The efficient dispersion of C70 in the PCDTBT matrix is attributed to an interaction between fullerene and the carbazole unit of the polymer.

  14. Enhanced photovoltaic performance of bulk heterojunction based on ZnS quantum dots-grafted graphene

    Science.gov (United States)

    Jindal, Shikha; Giripunje, Sushama M.

    2016-12-01

    ZnS quantum dots (QDs) and ZnS:graphene QDs were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of ZnS and ZnS:graphene QDs of the order of 3.7 nm and 8.4 nm, respectively. The band gap of ZnS:graphene QDs was tuned to 4.9 eV. Fourier transform infrared (FTIR) analysis confirms the formation of single phase ZnS QDs. The significant increase in conductivity of the order of 104 S/cm was observed in ZnS:graphene QDs. The bulk heterojunction devices ITO/PEDOT:PSS/P3HT:ZnSQDs/Al and ITO/PEDOT:PSS/P3HT:(ZnS:graphene)QDs/Al were fabricated. Here we demonstrate the increase in current density (from 2.44 μA/cm2 to 98.4 μA/cm2), alongwith the lower turn on voltage (decrease from 0.40 V to 0.12 V) by using the ZnS:graphene QDs as compared to pristine ZnS QDs in the active layer. Furthermore, this enhancement in current density shows that the ZnS:graphene QDs have a great potential for active layer in photovoltaic devices.

  15. Effects of acetone-soaking treatment on the performance of polymer solar cells based on P3HT/PCBM bulk heterojunction

    Science.gov (United States)

    Liu, Yu-Xuan; Lü, Long-Feng; Ning, Yu; Lu, Yun-Zhang; Lu, Qi-Peng; Zhang, Chun-Mei; Fang, Yi; Tang, Ai-Wei; Hu, Yu-Feng; Lou, Zhi-Dong; Teng, Feng; Hou, Yan-Bing

    2014-11-01

    The improvement of the acetone-soaking treatment to the performance of polymer solar cells based on the P3HT/PCBM bulk heterojunction is reported. Undergoing acetone-soaking, the PCBM does not distribute uniformly in the vertical direction, a PCBM enrichment layer forms on the top of the active layer, which is beneficial to the collection of the carriers and blocking the inverting diffusion carriers. X-ray photoelectron spectroscopy (XPS) analysis reveals that the PCBM weight ratio on the top of the active layer increases by 20% after the acetone-soaking treatment. Due to the nonuniform distribution of PCBM, the short-circuit current density, the open-circuit voltage, and the fill factor are enhanced significantly. Finally, the power conversion efficiency of the acetone-soaking device increases by 31% compared with the control device.

  16. Self-Aligned van der Waals Heterojunction Diodes and Transistors.

    Science.gov (United States)

    Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C

    2018-02-14

    A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

  17. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung

    2015-05-26

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  18. Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions.

    Science.gov (United States)

    Zhang, Yating; Song, Xiaoxian; Wang, Ran; Cao, Mingxuan; Wang, Haiyan; Che, Yongli; Ding, Xin; Yao, Jianquan

    2015-08-21

    Phototransistors based on graphene-quantum dot hybrids have a high responsivity and gain. However, the influence of the type of heterojunction on the photoresponse of the transistors is still undetermined. A comparison was performed on field-effect phototransistors (FEpTs) with two types of heterojunctions: layered heterojunctions (LHs) and bulk heterojunctions (BHs). Through a comparative study, it was shown that BH-FEpTs had electron and hole mobilities (μE and μH) of 677 and 527 cm(2) V(-1) s(-1) whereas LH-FEpTs had lower mobilities of μE = 314 cm(2) V(-1) s(-1) and μH = 367 cm(2) V(-1) s(-1). The large interfacial area in the BHs reduced the degree of channel order (α) by two orders of magnitude compared with the LHs. Although a higher mobility was achieved, an increase in the degree of channel disorder and the lack of an effective transfer mechanism limits the responsivity in BH-FEpTs. Therefore, LH-FEpTs are more appropriate candidates for near infrared phototransistors.

  19. Ultimate efficiency of polymer/fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Koster, LJA; Mihailetchi, VD; Blom, PWM

    2006-01-01

    We present model calculations to explore the potential of polymer/fullerene bulk heterojunction solar cells. As a starting point, devices based on poly(3-hexylthiophene) and 6,6-phenyl C-61-butyric acid methyl ester (PCBM), reaching 3.5% efficiency, are modeled. Lowering the polymeric band gap will

  20. Influence of Pt Gate Electrode Thickness on the Hydrogen Gas Sensing Characteristics of Pt/In2O3/SiC Hetero-Junction Devices

    Directory of Open Access Journals (Sweden)

    S. Kandasamy

    2007-09-01

    Full Text Available Hetero-junction Pt/In2O3/SiC devices with different Pt thickness (30, 50 and 90nm were fabricated and their hydrogen gas sensing characteristics have been studied. Pt and In2O3 thin films were deposited by laser ablation. The hydrogen sensitivity was found to increase with decreasing Pt electrode thickness. For devices with Pt thickness of 30 nm, the sensitivity gradually increased with increasing temperature and reached a maximum of 390 mV for 1% hydrogen in air at 530°C. Atomic force microscopy (AFM analysis revealed a decrease in Pt grain size and surface roughness for increasing Pt thickness. The relationship between the gas sensing performance and the Pt film thickness and surface morphology is discussed.

  1. Organic photovoltaic cells based on solvent-annealed, textured titanyl phthalocyanine/C{sub 60} heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Placencia, Diogenes; Wang, Weining; Shallcross, R.C.; Nebesny, Kenneth W.; Brumbach, Michael; Armstrong, Neal R. [Department of Chemistry, University of Arizona Tucson, AZ 85721 (United States)

    2009-06-23

    Organic photovoltaic cells (OPV) with good near-IR photoactivity are created from highly textured titanyl phthalocyanine (TiOPc)/C{sub 60} heterojunctions. Vacuum deposited TiOPc thin films are converted to the near-IR absorbing ''Phase II'' polymorph using post-deposition solvent annealing. The Phase I {yields} Phase II transition broadens the absorbance spectrum of the Pc film producing absorptivities ({alpha} {approx} 10{sup 5} cm{sup -1}) from 600-900 nm, along with substantial texturing of the Pc layer. Atomic force microscopy and field-emission scanning electron microscopy of the solvent annealed films show that the surface roughness of the Pc layers is increased by a factor of greater than 2 x as a result of the phase transformation. Current-voltage (J-V) responses for white light illumination of ITO (100 nm)/TiOPc (20 nm)/C{sub 60} (40 nm)/BCP (10 nm)/Al (100 nm) OPVs show a near doubling of the short-circuit photocurrent (J{sub SC}), with only a small decrease in open-circuit photopotential (V{sub OC}), and a concomitant increase in power conversion efficiency. Incident photon current efficiency (IPCE) plots confirmed the enhanced near-IR OPV activity, with maximum IPCE values of ca. 30% for devices using Phase II-only TiOPc films. UV-photoelectron spectroscopy (UPS) of TiOPc/C{sub 60} heterojunctions, for both Phase I and Phase II TiOPc films, suggest that the Phase II polymorph has nearly the same HOMO energy as seen in the Phase I polymorph, and similar frontier orbital energy offsets, E{sub HOMO}{sup Pc}-E{sub LUMO}{sup C60}, leading to comparable open-circuit photovoltages. These studies suggest new strategies for the formation of higher efficiency OPVs using processing conditions which lead to enhance near-IR absorptivities, and extensive texturing of crystalline donor or acceptor films. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  2. Asphaltene based photovoltaic devices

    Science.gov (United States)

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  3. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  4. Organic photovoltaic devices based on a novel acceptor material: graphene

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zunfeng; Huang, Yi; Ma, Yanfeng; Zhang, Xiaoyan; Sun, Wei; Chen, Yongsheng [Centre for Nanoscale Science and Technology Institute of Polymer Chemistry College of Chemistry, Nankai University, Tianjin (China); Liu, Qian; Yin, Shougen [Key Laboratory of Display Materials and Photoelectric Devices Institute of Material Physics, Tianjin University of Technology (China)

    2008-10-17

    Solution-processable functionalized graphene (SPFGraphene) is used as the electron-accepting material in organic photovoltaic (OPV) devices for the first time, showing that it is a competitive alternative. The fabrication and performance of bulk heterojunction OPV devices with SPFGraphene and different donor materials is presented, together with the impact of post-fabrication annealing. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  5. Charge Recombination Suppressed by Destructive Quantum Interference in Heterojunction Materials.

    Science.gov (United States)

    Tempelaar, Roel; Koster, L Jan Anton; Havenith, Remco W A; Knoester, Jasper; Jansen, Thomas L C

    2016-01-07

    We show that charge recombination in ordered heterojunctions depends sensitively on the degree of coherent delocalization of charges at the donor-acceptor interface. Depending on the relative sign of the electron and hole transfer integrals, such delocalization can dramatically suppress recombination through destructive quantum interference. This could explain why measured recombination rates are significantly lower than predictions based on Langevin theory for a variety of organic bulk heterojunctions. Moreover, it opens up a design strategy for photovoltaic devices with enhanced efficiencies through coherently suppressed charge recombination.

  6. Near white electroluminescence from self-supporting ZnO nanocone array based heterojunction light-emitting diodes

    Science.gov (United States)

    Wang, Haoning; Long, Hao; Mo, Xiaoming; Chen, Zhao; Li, Songzhan; Huang, Huihui; Liu, Yuping; Fang, Guojia

    2015-03-01

    Self-supporting ZnO nanocone arrays (NCAs) were fabricated by a low temperature and substrate-free hydrothermal process in open air, and near white electroluminescence (EL) devices with a structure of n-ZnO NCAs/p-Si heterojunction were fabricated. Different EL performances were achieved by controlling the growth time of ZnO nanocone layer and the chromaticity coordinates of the obtained diodes are tunable and can be changed from (0.36, 0.41) to (0.29, 0.32), which is close to (0.33, 0.33) of standard white light. The mechanism of the EL emission phenomenon was discussed.

  7. Simulation and optimization of the performance of organic photovoltaic cells based on capped copolymers for bulk heterojunctions

    Science.gov (United States)

    Mhamdi, A.; Boukhili, W.; Raissi, M.; Mahdouani, M.; Vignau, L.; Bourguiga, R.

    2016-08-01

    Recently many investigations have been done to improve the performance of solar cells photovoltaic. One of this devices developed is the Bulk Heterojunction (BHJ) solar cells based on poly (3-hexylthiophene) (P3HT)/[6, 6]-phenyl C61-butyric acid methyl ester (PCBM) blend which have been fabricated by spin-coating. It is known that the nanostructure of the active layer of this device has an important impact on the photovoltaic performances. In this work, we analyze the results obtained on solar cells using a copolymer P3HT-b-PS based on poly (3-hexylthiophene) (P3HT) as a donor block and polystyrene (PS) as a soft block, their compatibility with the blend of P3HT/PCBM at various weight percentages (0%-5%). The addition of this weight percentage is in order to improve the performance of polymer solar cells. It has been demonstrated that the addition of a small amount of P3HT-b-PS (from 0.5%-1.5%) led to an increase in photovoltaic efficiency compared to devices made from P3HT/PCBM only. To study the impact of the added amount of the P3HT-b-PS on the performances of the fabricated organic cells, we used an equivalent circuit model based on single diode model with five photovoltaic parameters. Then, we extracted these physical parameters of the organic photovoltaic cells such as the saturation current density, the series and shunt resistances, the ideality factor and the photogenerated current density from the experimental characteristics (J-V) in the dark and under illumination. We proposed and developed the used procedure based on this model and we resolved the analytic equations of the density-current using the Lambert W-function. A good agreement between the theoretical model and the experimental data of electrical characteristics is obtained illustrating the enhancement of the addition of a small amount of P3HT-b-PS (≤1.5%) in the P3HT/PCBM blend on the characteristics of BHJ organic photovoltaic cells.

  8. Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

    Science.gov (United States)

    Gollu, Sankara Rao; Sharma, Ramakant; G, Srinivas; Gupta, Dipti

    2014-10-01

    Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO3/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO3 layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

  9. From Recombination Dynamics to Device Performance: Quantifying the Efficiency of Exciton Dissociation, Charge Separation, and Extraction in Bulk Heterojunction Solar Cells with Fluorine-Substituted Polymer Donors

    KAUST Repository

    Gorenflot, Julien

    2017-09-28

    An original set of experimental and modeling tools is used to quantify the yield of each of the physical processes leading to photocurrent generation in organic bulk heterojunction solar cells, enabling evaluation of materials and processing condition beyond the trivial comparison of device performances. Transient absorption spectroscopy, “the” technique to monitor all intermediate states over the entire relevant timescale, is combined with time-delayed collection field experiments, transfer matrix simulations, spectral deconvolution, and parametrization of the charge carrier recombination by a two-pool model, allowing quantification of densities of excitons and charges and extrapolation of their kinetics to device-relevant conditions. Photon absorption, charge transfer, charge separation, and charge extraction are all quantified for two recently developed wide-bandgap donor polymers: poly(4,8-bis((2-ethylhexyl)oxy)benzo[1,2-b:4,5-b′]dithiophene-3,4-difluorothiophene) (PBDT[2F]T) and its nonfluorinated counterpart poly(4,8-bis((2-ethylhexyl)oxy)benzo[1,2-b:4,5-b′]dithiophene-3,4-thiophene) (PBDT[2H]T) combined with PC71BM in bulk heterojunctions. The product of these yields is shown to agree well with the devices\\' external quantum efficiency. This methodology elucidates in the specific case studied here the origin of improved photocurrents obtained when using PBDT[2F]T instead of PBDT[2H]T as well as upon using solvent additives. Furthermore, a higher charge transfer (CT)-state energy is shown to lead to significantly lower energy losses (resulting in higher VOC) during charge generation compared to P3HT:PCBM.

  10. Carbon based prosthetic devices

    Energy Technology Data Exchange (ETDEWEB)

    Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T. [Los Alamos National Lab., NM (US); Klawitter, J.J.; Ogilvie, W.; Strzepa, P. [Ascension Orthopedics (US); Cook, S.D. [Tulane Univ., New Orleans, LA (US). School of Medicine

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

  11. Opto-electronic properties of a TiO{sub 2}/PS/mc-Si heterojunction based solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Janene, N.; Ghrairi, N. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia); Allagui, A. [Center for Advanced Materials Research, University of Sharjah, PO Box 27272, Sharjah (United Arab Emirates); Dept. of Sustainable and Renewable Energy Engineering, University of Sharjah, PO Box 27272, Sharjah (United Arab Emirates); Alawadhi, H. [Center for Advanced Materials Research, University of Sharjah, PO Box 27272, Sharjah (United Arab Emirates); Khakani, M. A. El [Institut National de la Recherche Scientifique, INRS-Énergie, Matériaux et Télécommunications, 1650, Blvd. Lionel-Boulet, Varennes, QC, Canada J3X-1S2 (Canada); Bessais, B. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif (Tunisia); Gaidi, M., E-mail: mkaidi@sharjah.ac.ae [Center for Advanced Materials Research, University of Sharjah, PO Box 27272, Sharjah (United Arab Emirates)

    2016-04-15

    Graphical abstract: - Highlights: • In this work solar cells based on Au/PS/mc-Si/Al and Au/TiO{sub 2}/PS/mc-Si/Al structures have prepared. • A novel double treatment passivation based on TiO2/Porous Si has been used. • An enhancement of the electrical properties of TiO{sub 2}/PS/mc-Si heterojunction was observed after TiO{sub 2} coating. • The solar cells efficiencies past from 1.4% for uncoated PS/mc-Si structure to 5% for TiO{sub 2} coated one. - Abstract: In this work, we show the results of our investigation on the photoelectric properties of heterojunction solar cells based on Au/PS/mc-Si/Al and Au/TiO{sub 2}/PS/mc-Si/Al structures. Porous silicon (PS) were prepared by an electrochemical etching process with different values of current density. The surface porosity was found to increase with the increase of current density. Pulsed laser deposition was used to deposit 80 nm TiO{sub 2} thin films. Surface morphology and structural properties of TiO{sub 2}/PS were characterized by using scanning electron microscopy (SEM) and atomic force microscopy (AFM). An enhancement of the electrical properties of the TiO{sub 2}/PS/mc-Si heterojunction was observed after coating with TiO{sub 2}. As a consequence, the solar cell efficiencies increased from 1.4% for the uncoated PS/mc-Si structure to 5% for the TiO{sub 2} coated one. Impedance spectroscopy confirmed the passivation effect of TiO{sub 2} through the improvement of the elaborated cells’ electron lifetime and the formation of a TiO{sub 2}/PS/Au heterojunction with the appearance of a second semi-circle in the Nyquist plot.

  12. Long-term efficient organic photovoltaics based on quaternary bulk heterojunctions

    Science.gov (United States)

    Nam, Minwoo; Cha, Minjeong; Lee, Hyun Hwi; Hur, Kahyun; Lee, Kyu-Tae; Yoo, Jaehong; Han, Il Ki; Kwon, S. Joon; Ko, Doo-Hyun

    2017-01-01

    A major impediment to the commercialization of organic photovoltaics (OPVs) is attaining long-term morphological stability of the bulk heterojunction (BHJ) layer. To secure the stability while pursuing optimized performance, multi-component BHJ-based OPVs have been strategically explored. Here we demonstrate the use of quaternary BHJs (q-BHJs) composed of two conjugated polymer donors and two fullerene acceptors as a novel platform to produce high-efficiency and long-term durable OPVs. A q-BHJ OPV (q-OPV) with an experimentally optimized composition exhibits an enhanced efficiency and extended operational lifetime than does the binary reference OPV. The q-OPV would retain more than 72% of its initial efficiency (for example, 8.42-6.06%) after a 1-year operation at an elevated temperature of 65 °C. This is superior to those of the state-of-the-art BHJ-based OPVs. We attribute the enhanced stability to the significant suppression of domain growth and phase separation between the components via kinetic trapping effect.

  13. A back-illuminated heterojunctions ultraviolet photodetector based on ZnO film

    Science.gov (United States)

    Jiang, Xiandong; Li, Dawei; Yang, Wenjun; Wang, Jiming; Lin, Xu; Huang, Ziqiang

    2010-10-01

    In this paper, we present the investigation of a back-illuminated heterojunctions ultraviolet detector, which were fabricated by depositing Ag-doped ZnO based (ZnO-TiO2) thin film on transparent conductive layer of ITO coated quartz substrate though the reactive radio-frequency (RF) magnetron sputtering at higher oxygen pressure. The p-n junction characteristic is confirmed by current-voltage (I-V) measurements. The turn-on voltage was 6 V, with a low leakage current under reverse bias (-5 V), corresponding values was just 0.2 nA . It is clearly showed the rectifying characteristics of typical p-n junction's rectifier behaviors. The structural, component and UV (365 nm, 1400 μW/cm2) photoresponse properties were explored by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), X-ray energy dispersive spectrometer (EDS) and Tektronix oscilloscope. The results showed that: Ag in substitution form in the ZnO lattice, Ag doping concentration is low, the sample is highly c-axis preferred orientation, With the increase in doped Ag volume, ZnO film of 002 peaks no longer appear. The surface of the Ag doped ZnO based film exhibits a smooth surface and very dense structure, no visible pores and defects over the film were observed.The ultraviolet response time measurements showed rise and fall time are several seconds Level.

  14. Plasma Based Devices

    National Research Council Canada - National Science Library

    Gundersen, M

    2001-01-01

    .... Energy-efficient plasma-based technologies, supported through this grant, are now under commercial investigation for pollution abatement, and have potential for reduced emissions, higher efficiencies...

  15. Effects of modifying active-layer/cathode interface on P3HT/PCBM based bulk-heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bom, Sidhant; Wagner, Veit [Jacobs University Bremen (Germany). School of Engineering and Science

    2009-07-01

    The compatibility of organic photovoltaics (OPVs) with large area printing using flexible substrates offers significant cost reduction and gives the field substantial ecological and economic advantages. However, low efficiencies and inferior environmental stability has been their major setbacks. Photo-generated excitons which dissociate at donor-acceptor interface in bulk-heterojunction OPV devices are collected at the electrodes. This work focuses on interface engineering between the active layer and cathode and on environmental stability. A series of bulk-heterojunction OPV cells were made on indium tin oxide coated glass with poly(3-hexylthiophene) (P3HT) and[6,6]-phenyl C61 butyric acid methyl ester (PCBM) composite as the active layer using different work-function metals: Ag, Al, Au and Ca as cathodes. Furthermore, the environment was changed for different production steps between ambient air and dry nitrogen. For the devices completely processed in air, the cells with Al electrodes showed the best performance which was however much lower than completely nitrogen processed samples. The photocurrent features on the air processed sample were strongly bias dependent and indicates degradation of PCBM.

  16. Hybrid solar cell based on a-Si/polymer flat heterojunction on flexible substrates

    Science.gov (United States)

    Olivares Vargas, A. J.; Mansurova, S.; Cosme, I.; Kosarev, A.; Ospina Ocampo, C. A.; Martinez Mateo, H. E.

    2017-08-01

    In this work, we present the results of investigation of thin film hybrid organic-inorganic photovoltaic structures based on flat heterojunction hydrogenated silicon (a-Si:H) and poly(3,4 ethylene dioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) fabricated on polyethylene naphthalate (PEN). Different thicknesses of transparent AL doped Zn:O (AZO) electrodes have been tested on PEN substrate and studied by atomic force microscopy (AFM). The AZO films on PEN substrate were statistically processed to obtain surface morphological characteristics, such as root mean square roughness RQ, skewness SK and kurtosis KU. Performance characteristics of fabricated photovoltaic structures have been measured and analyzed for different thicknesses of the transparent electrodes under standard illumination (AM 1.5 I0= 100mW/cm2). Structures on flexible substrates show reproducible performance characteristic as their glass substrate counterpart with values of JSC= 6 mA/cm2, VOC= 0.535 V, FF= 43 % and PCE= 1.41%.

  17. Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

    Science.gov (United States)

    Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

    2017-10-01

    Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ∼50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

  18. Liquid crystalline perylene diimide outperforming nonliquid crystalline counterpart: higher power conversion efficiencies (PCEs) in bulk heterojunction (BHJ) cells and higher electron mobility in space charge limited current (SCLC) devices.

    Science.gov (United States)

    Zhang, Youdi; Wang, Helin; Xiao, Yi; Wang, Ligang; Shi, Dequan; Cheng, Chuanhui

    2013-11-13

    In this work, we propose the application of liquid crystalline acceptors as a potential means to improve the performances of bulk heterojunction (BHJ) organic solar cells. LC-1, a structurally-simple perylene diimide (PDI), has been adopted as a model for thorough investigation. It exhibits a broad temperature range of liquid crystalline (LC) phase from 41 °C to 158 °C, and its LC properties have been characterized by differental scanning calorimetry (DSC), polarization optical microscopy (POM), and X-ray diffraction (XRD). The BHJ devices, using P3HT:LC-1 (1:2) as an organic photovoltaic active layer undergoing thermal annealing at 120 °C, shows an optimized efficiency of 0.94 %. By contrast, the devices based on PDI-1, a nonliquid crystalline PDI counterpart, only obtain a much lower efficiency of 0.22%. Atomic force microscopy (AFM) images confirm that the active layers composed of P3HT:LC-1 have smooth and ordered morphology. In space charge limited current (SCLC) devices fabricated via a spin-coating technique, LC-1 shows the intrinsic electron mobility of 2.85 × 10(-4) cm(2)/(V s) (at 0.3 MV/cm) which is almost 5 times that of PDI-1 (5.83 × 10(-5) cm(2)/(V s)) under the same conditions for thermal annealing at 120 °C.

  19. Gate-Controlled BP-WSe2Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

    Science.gov (United States)

    Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing

    2017-06-01

    p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe 2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe 2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe 2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. CdTe Nanocrystal Hetero-Junction Solar Cells with High Open Circuit Voltage Based on Sb-doped TiO₂ Electron Acceptor Materials.

    Science.gov (United States)

    Li, Miaozi; Liu, Xinyan; Wen, Shiya; Liu, Songwei; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Wu, Hongbin; Xu, Wei; Huang, Wenbo

    2017-05-03

    We propose Sb-doped TiO₂ as electron acceptor material for depleted CdTe nanocrystal (NC) hetero-junction solar cells. Novel devices with the architecture of FTO/ZnO/Sb:TiO₂/CdTe/Au based on CdTe NC and TiO₂ precursor are fabricated by rational ambient solution process. By introducing TiO₂ with dopant concentration, we are able to tailor the optoelectronic properties of NC solar cells. Our novel devices demonstrate a very high open circuit voltage of 0.74 V, which is the highest V oc reported for any CdTe NC based solar cells. The power conversion efficiency (PCE) of solar cells increases with the increase of Sb-doped content from 1% to 3%, then decreases almost linearly with further increase of Sb content due to the recombination effect. The champion device shows J sc , V oc , FF, and PCE of 14.65 mA/cm², 0.70 V, 34.44, and 3.53% respectively, which is prospective for solution processed NC solar cells with high V oc .

  1. Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe2-WSe2van der Waals Heterojunction-Based Field-Effect Transistors.

    Science.gov (United States)

    Son, Seung Bae; Kim, Yonghun; Kim, AhRa; Cho, Byungjin; Hong, Woong-Ki

    2017-11-29

    Atomically thin two-dimensional (2D) van der Waals (vdW) heterostructures are one of the very important research issues for stacked optoelectronic device applications. In this study, using the transferred and stacked NbSe 2 -WSe 2 films as electrodes and a channel, we fabricated the field-effect transistor (FET) devices based on 2D-2D vdW metal-semiconductor heterojunctions (HJs) and systematically studied their ultraviolet (UV) wavelength-dependent electrical and photoresponse properties. Upon the exposure to UV light with a wavelength of 365 nm, the NbSe 2 -WSe 2 vdW HJFET devices exhibited threshold voltage shift toward positive gate bias direction, a current increase, and a nonlinear photocurrent increase upon applying a gate bias due to the contribution of the photogenerated hole current. In contrast, for the 254 nm UV-irradiated FET devices, the drain current was decreased dramatically and the threshold voltage was negatively shifted. The time-resolved photoresponse properties showed that the device current after turning off the 254 nm UV light was completely and much more rapidly recovered compared with the case of the persistent photocurrent after turning off the 365 nm UV light. Interestingly, we found that the wettability of the WSe 2 surface was changed with increasing irradiation time only after 254 nm UV irradiation. The measured wetting behavior on the WSe 2 surface provided direct evidence that the experimentally observed UV-wavelength-dependent phenomena was attributed to the UV-induced dissociative adsorption of oxygen and water molecules, leading to the modulation of charge trap states on the photogenerated and intrinsic carriers in the p-type WSe 2 channel. This study will help provide an understanding of the influence of environmental and electrical measurement conditions on the electrical and optical properties of 2D-2D vdW HJ devices for a variety of device applications through the stacking of 2D heterostructures.

  2. P3HT/PCBM bulk heterojunction solar cells: impact of blend composition and 3D morphology on device performance

    Energy Technology Data Exchange (ETDEWEB)

    Bavel, Svetlana S. van; Loos, Joachim [Laboratory of Materials and Interface Chemistry and Soft Matter Cryo-TEM Research Unit, Eindhoven University of Technology (Netherlands); Dutch Polymer Institute, Eindhoven (Netherlands); Baerenklau, Maik; Hoppe, Harald [Institute of Physics Technical, University Ilmenau (Germany); With, Gijsbertus de [Laboratory of Materials and Interface Chemistry and Soft Matter Cryo-TEM Research Unit, Eindhoven University of Technology (Netherlands)

    2010-05-10

    The performance of polymer solar cells (PSC) strongly depends on the 3D morphological organization of the donor and acceptor compounds within the bulk heterojunction active layer. The technique of electron tomography is a powerful tool for studying 3D morphology of the layers composed of poly(3-hexylthiophene) (P3HT) and a fullerene derivative ([6,6]-phenyl-C61-butyric acid methyl ester; PCBM), especially to quantify the amount and distribution of fibrillar P3HT nanocrystals throughout the volume of the active layer. In this study, electron tomography is used to characterize P3HT/PCBM layers with different blend compositions, both before and after thermal annealing. The power conversion efficiency of the corresponding PSCs is strongly dependent on the overall crystallinity of P3HT and the way P3HT crystals are distributed throughout the thickness of the active layer. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  3. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Science.gov (United States)

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p–n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current–voltage (I–V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I–V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of ‑1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60–70% in the visible region.

  4. CVD graphene as interfacial layer to engineer the organic donor-acceptor heterojunction interface properties.

    Science.gov (United States)

    Zhong, Shu; Zhong, Jian Qiang; Mao, Hong Ying; Wang, Rui; Wang, Yu; Qi, Dong Chen; Loh, Kian Ping; Wee, Andrew Thye Shen; Chen, Zhi Kuan; Chen, Wei

    2012-06-27

    We demonstrate the use of chemical-vapor-deposited (CVD) graphene as an effective indium-tin-oxide (ITO) electrode surface modifier to engineer the organic donor-acceptor heterojunction interface properties in an inverted organic solar cell device configuration. As revealed by in situ near-edge X-ray adsorption fine structure measurement, the organic donor-acceptor heterojunction, comprising copper-hexadecafluoro-phthalocyanine (F16CuPc) and copper phthalocyanine (CuPc), undergoes an obvious orientation transition from a standing configuration (molecular π-plane nearly perpendicular to the substrate surface) on the bare ITO electrode to a less standing configuration with the molecular π-plane stacking adopting a large projection along the direction perpendicular to the electrode surface on the CVD graphene-modified ITO electrode. Such templated less-standing configuration of the organic heterojunction could significantly enhance the efficiency of charge transport along the direction perpendicular to the electrode surface in the planar heterojunction-based devices. Compared with the typical standing organic-organic heterojunction on the bare ITO electrode, our in situ ultraviolet photoelectron spectroscopy experiments reveal that the heterojunction on the CVD graphene modified ITO electrode possesses better aligned energy levels with respective electrodes, hence facilitating effective charge collection.

  5. Novel compound semiconductor devices based on III-V nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Pearton, S.J.; Abernathy, C.R. [Florida Univ., Gainesville, FL (United States); Ren, F. [AT & T Bell Laboratories, Murray Hill, NJ (United States)] [and others

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  6. Simulation of a high-efficiency silicon-based heterojunction solar cell

    Science.gov (United States)

    Jian, Liu; Shihua, Huang; Lü, He

    2015-04-01

    The basic parameters of a-Si:H/c-Si heterojunction solar cells, such as layer thickness, doping concentration, a-Si:H/c-Si interface defect density, and the work functions of the transparent conducting oxide (TCO) and back surface field (BSF) layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si:H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p+-a-Si:H/Ag solar cell, a photoelectric conversion efficiency of 27.07% (VOC) 749 mV, JSC: 42.86 mA/cm2, FF: 84.33%) was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si:H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer (HIT) solar cell manufacturing. Project supported by the National Natural Science Foundation of China (No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. FDS-KL2011-04), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  7. Enhanced planar perovskite solar cell efficiency and stability using a perovskite/PCBM heterojunction formed in one step.

    Science.gov (United States)

    Zhou, Long; Chang, Jingjing; Liu, Ziye; Sun, Xu; Lin, Zhenhua; Chen, Dazheng; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

    2018-01-29

    Perovskite/PCBM heterojunctions are efficient for fabricating perovskite solar cells with high performance and long-term stability. In this study, an efficient perovskite/PCBM heterojunction was formed via conventional sequential deposition and one-step formation processes. Compared with conventional deposition, the one-step process was more facile, and produced a perovskite thin film of substantially improved quality due to fullerene passivation. Moreover, the resulting perovskite/PCBM heterojunction exhibited more efficient carrier transfer and extraction, and reduced carrier recombination. The perovskite solar cell device based on one-step perovskite/PCBM heterojunction formation exhibited a higher maximum PCE of 17.8% compared with that from the conventional method (13.7%). The device also showed exceptional stability, retaining 83% of initial PCE after 60 days of storage under ambient conditions.

  8. Toward high-temperature stability of PTB7-based bulk heterojunction solar cells : impact of fullerene size and solvent additive

    OpenAIRE

    Ben Dkhil, Sadok; Pfannmöller, Martin; Saba, Maria Ilenia; Gaceur, Meriem; Heidari, Hamed; Videlot-Ackermann, Christine; Margeat, Olivier; Guerrero, Antonio; Bisquert, Juan; Garcia-Belmonte, Germa; Mattoni, Alessandro; Bals, Sara; Ackermann, Jorg

    2017-01-01

    Abstract: The use of fullerene as acceptor limits the thermal stability of organic solar cells at high temperatures as their diffusion inside the donor leads to phase separation via Ostwald ripening. Here it is reported that fullerene diffusion is fully suppressed at temperatures up to 140 degrees C in bulk heterojunctions based on the benzodithiophene-based polymer (the poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b: 4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl) carbonyl]thieno[3,4-b]...

  9. A Flexible Blue Light-Emitting Diode Based on ZnO Nanowire/Polyaniline Heterojunctions

    Directory of Open Access Journals (Sweden)

    Y. Y. Liu

    2013-01-01

    Full Text Available An organic/inorganic light-emitting diode (LED consisting of n-type vertically aligned ZnO nanowires (NWs and p-type proton acid doped polyaniline (PANi is reported. The device was fabricated on flexible indium-tin-oxide (ITO coated polyethylene terephthalate (PET substrate. A broad blue light emission band ranging from 390 nm to 450 nm was observed in the electroluminescence (EL spectra of the device, which was related to the interface recombination of electrons in the conduction band of ZnO NWs and holes in the polaron level of PANi. The turn-on voltage of the device is ~3.5 V, lower than most of ZnO NWs based LED devices. In combination with the easy fabrication, flexibility, low power consumption, and mechanical robustness, this novel device is very promising in the application of blue LEDs.

  10. Monolayer MoS2 heterojunction solar cells

    KAUST Repository

    Tsai, Menglin

    2014-08-26

    We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.

  11. Note: cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors.

    Science.gov (United States)

    Beev, Nikolai; Kiviranta, Mikko

    2012-06-01

    Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

  12. Electron Devices Based on Transition Metal Dichalcogenides

    Science.gov (United States)

    Tosun, Mahmut

    Integrated circuits consists of building blocks called transistors. A transistor is a switch that enables logic operations to perform computing. Since the invention of the first integrated circuit, transistors have been scaled down in their dimensions to increase the density of transistors per unit area to enable more functionality. Transistor scaling is continued by introducing novel device structures and materials at each technology node. Due to the challenges such as short channel effects and the power consumption issues, novel materials are investigated as a candidate for next generation transistors. In this thesis, 2-dimensinal layered semiconductors, namely transition metal dichalcogenides (TMDCs) are studied to assess their electronic material properties as a candidate channel material for next generation electronic devices. Chapter one, introduces the challenges in the state of the art MOSFET devices. Then the motivation for the use of TMDCs in MOSFETs is explained. In chapter two, doping of the TMDCs is studied to be able to probe the intrinsic electronic properties of the devices fabricated using these materials. Contact resistance can be decreased by doping and TMDC MOSFETs with near-ideal performance metrics are demonstrated. In chapter three the CMOS integration of the devices using TMDCs are examined. Logic operations are conducted by fabricating WSe 2 n-FETs and p-FETs on the same flake. Then vertical 3-dimensional integration of n-FETs and p-FETs are demonstrated using the same gate. These transistors are connected as a CMOS inverter and logic operations are performed. Chapter four presents the band structure engineering study using TMDCs. Mono-multilayer MoS2 junctions are found to have a type-I heterojunction. Optoelectronic properties of this junction are investigated and the junction is shown to have a photoresponse that dominates the photoresponse coming from the contacts. In chapter five, the tunneling devices using TMDCs are studied. Dual

  13. Unraveling the Mechanisms of Visible Light Photocatalytic NO Purification on Earth-Abundant Insulator-Based Core-Shell Heterojunctions.

    Science.gov (United States)

    Wang, Hong; Sun, Yanjuan; Jiang, Guangming; Zhang, Yuxin; Huang, Hongwei; Wu, Zhongbiao; Lee, S C; Dong, Fan

    2018-01-08

    Earth-abundant insulators are seldom exploited as photocatalysts. In this work, we constructed a novel family of insulator-based heterojunctions and demonstrated their promising applications in photocatalytic NO purification, even under visible light irradiation. The heterojunction formed between the insulator SrCO3 and the photosensitizer BiOI, via a special SrCO3-BiOI core-shell structure, exhibits an enhanced visible light absorbance between 400-600 nm, and an unprecedentedly high photocatalytic NO removal performance. Further density functional theory (DFT) calculations and X-ray photoelectron spectroscopy (XPS) analysis revealed that the covalent interaction between the O 2p orbital of the insulator (SrCO3, n-type) and the Bi 6p orbital of photosensitizer (BiOI, p-type) can provide an electron transfer channel between SrCO3 and BiOI, allowing the transfer of the photoexcited electrons from the photosensitizer to the conduction band of insulator (confirmed by charge difference distribution analysis and time-resolved fluorescence spectroscopy). The •O2- and •OH radicals are the main reactive species in photocatalytic NO oxidation. A reaction pathway study based on both in situ FT-IR and molecular-level simulation of NO adsorption and transformation indicates that this heterojunction can efficiently transform NO to harmless nitrate products via the NO → NO+ and NO2+ → nitrate or nitrite routes. This work provides numerous opportunities to explore earth-abundant insulators as visible-light-driven photocatalysts, and also offers a new mechanistic understanding of the role of gas-phase photocatalysis in controlling air pollution.

  14. Graphene-based energy devices

    CERN Document Server

    Yusoff, A Rashid bin Mohd

    2015-01-01

    This first book dedicated to the topic provides an up-to-date account of the many opportunities graphene offers for robust, workable energy generation and storage devices. Following a brief overview of the fundamentals of graphene, including the main synthesis techniques, characterization methods and properties, the first part goes on to deal with graphene for energy storage applications, such as lithium-ion batteries, supercapacitors and hydrogen storage. The second part is concerned with graphene-based energy-generation devices, in particular conventional as well as microbial and enzymatic f

  15. Macroscopic versus microscopic photovoltaic response of heterojunctions based on mechanochemically prepared nanopowders of kesterite and n-type semiconductors

    Directory of Open Access Journals (Sweden)

    O.P. Dimitriev

    2017-12-01

    Full Text Available Mechanochemically prepared nanopowder of selenium-free kesterite Cu2ZnSnS4 (CZTS in combination with n-type semiconductors, i.e., CdS, ZnO and TiO2, was tested in planar and bulk-heterojunction solar cells. The samples have been studied by macroscopic current-voltage (I-V measurements and Kelvin-probe atomic-force microscopy (KPFM. KPFM images taken under light illumination showed the distribution of the potential across the surface, with negative potential on the n-type semiconductor domains and positive potential on the CZTS domains, which indicated charge separation at the interface of the counterparts. The best result was found for the CdS-CZTS composition, which showed a potential difference between the domains up to 250 mV. These results were compared with the planar heterojunctions of CdS/CZTS and TiO2/CZTS, where CZTS nanopowder was pressed/deposited directly onto the surface of films of the corresponding n-type semiconductors. Again, I-V characteristics showed that cells based on CdS/CZTS heterojunctions have the best performance, with a photovoltage up to 200 mV and photocurrent densities up to 0.1 mA/cm2. However, the carrier generation was found to occur mainly in the CdS semiconductor, while CZTS showed no photo-response and served as the hole-transporting layer only. It is concluded that sensitization of the kesterite powder obtained by mechanochemical method is necessary to improve the performance of the corresponding solar cells.

  16. Recent progress in van der Waals heterojunctions.

    Science.gov (United States)

    Xia, Wanshun; Dai, Liping; Yu, Peng; Tong, Xin; Song, Wenping; Zhang, Guojun; Wang, Zhiming

    2017-03-30

    Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.

  17. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells.

    Science.gov (United States)

    Wong, Terence K S; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K

    2016-04-07

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu₂O), cupric oxide (CuO) and copper (III) oxide (Cu₄O₃) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu₂O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1-xO onto thermal Cu₂O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu₂O nanopowder. CuO/Cu₂O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu₄O₃/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10-2%.

  18. Influence of blend microstructure on bulk heterojunction organic photovoltaic performance.

    Science.gov (United States)

    Brabec, Christoph J; Heeney, Martin; McCulloch, Iain; Nelson, Jenny

    2011-03-01

    The performance of organic photovoltaic devices based upon bulk heterojunction blends of donor and acceptor materials has been shown to be highly dependent on the thin film microstructure. In this tutorial review, we discuss the factors responsible for influencing blend microstructure and how these affect device performance. In particular we discuss how various molecular design approaches can affect the thin film morphology of both the donor and acceptor components, as well as their blend microstructure. We further examine the influence of polymer molecular weight and blend composition upon device performance, and discuss how a variety of processing techniques can be used to control the blend microstructure, leading to improvements in solar cell efficiencies.

  19. Non-fullerene acceptor-based bulk heterojunction polymer solar cells: engineering the nanomorphology via processing additives

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Guoqiang; Ahmed, Eilaf; Jenekhe, Samson A. [Department of Chemical Engineering, Department of Chemistry, University of Washington, Seattle, Washington 98195 (United States)

    2011-10-15

    The performance of bulk heterojunction solar cells made from blends of a non-fullerene acceptor, N,N'-bis(2-ethylhexyl)-2,6-bis(5''-hexyl-[2,2';5',2'']terthiophen-5yl)-1,4,5,8-naphthalene diimide (NDI-3TH), and poly(3-hexylthiophene) (P3HT) donor is enhanced 10-fold by using a processing additive in conjunction with an electron-blocking and a hole-blocking buffer layers. The power conversion efficiency of P3HT:NDI-3TH solar cells improves from 0.14% to 1.5% by using a processing additive (1,8-diiodooctane) at an optimum concentration of 0.2 vol%, which is far below the 2-3 vol% optimum concentrations found in polymer/fullerene systems. TEM and AFM imaging show that the size and connectivity of the NDI-3TH domains in the phase-separated P3HT:NDI-3TH blends vary strongly with the concentration of the processing additive. These results demonstrate, for the first time, that processing additives can be effective in the optimization of the morphology and performance of bulk heterojunction polymer solar cells based on non-fullerene acceptors. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Thickness dependence of the efficiency of polymer : fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Lenes, M; Koster, LJA; Mihailetchi, VD; Blom, PWM

    2006-01-01

    We study the thickness dependence of the performance of bulk heterojunction solar cells based on poly[2-methoxy-5-(3('),7(')-dimethyloctyloxy)-1,4-phenylenevinylene] as electron donor and [6,6]-phenyl C-61 butyric acid methyl ester as electron acceptor. Typically, these devices have an active layer

  1. Morphology Control in co-evaporated bulk heterojunction solar cells

    OpenAIRE

    Kovacik, Peter; Assender, Hazel E.; Watt, Andrew A. R.

    2013-01-01

    Bulk heterojunction solar cells made by vacuum co-evaporation of polythiophene (PTh) and fullerene (C60) are reported and the blend morphology control through donor-acceptor composition and post-situ annealing demonstrated. Co-deposited heterojunctions are shown to generate about 60% higher photocurrents than their thickness-optimized PTh/C60 planar heterojunction counterparts. Furthermore, by annealing the devices post-situ the power conversion efficiency is improved by as much as 80%. UV-vi...

  2. Analysis of electrical properties of heterojunction based on ZnIn2Se4

    Science.gov (United States)

    Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

    2017-04-01

    Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

  3. Boosting the Visible-Light Photoactivity of BiOCl/BiVO4/N-GQD Ternary Heterojunctions Based on Internal Z-Scheme Charge Transfer of N-GQDs: Simultaneous Band Gap Narrowing and Carrier Lifetime Prolonging.

    Science.gov (United States)

    Zhu, Mingyue; Liu, Qian; Chen, Wei; Yin, Yuanyuan; Ge, Lan; Li, Henan; Wang, Kun

    2017-11-08

    The efficient separation of photogenerated electron-hole pairs in photoactive materials is highly desired, allowing their transfer to specific sites for undergoing redox reaction in various applications. The construction of ternary heterojunctions is a practical strategy to enhance the migration of photogenerated electron that realizes the synergistic effect of multicomponents rather than the simple overlay of single component. Here, we demonstrate an available way to fabricate new BiOCl/BiVO 4 /nitrogen-doped graphene quantum dot (N-GQD) ternary heterojunctions that exhibit higher efficiency in charge separation than any binary heterojunction or pure material under visible-light irradiation. UV-vis diffuse reflectance spectroscopy demonstrated that the proposed BiOCl/BiVO 4 /N-GQD ternary heterojunctions possess the narrower band gap energy. More importantly, the ternary heterojunctions reveal the prolonged lifetime of photogenerated charges and enhanced the separation efficiency of photogenerated electron-hole pairs, which may be ascribed to sensitization based on an internal Z-scheme charge transfer at the interface of N-GQDs with oxygen functional groups. Furthermore, we examine the photoactive performance of proposed ternary heterojunctions in aqueous solution by using the photodegradation of bisphenol A as a model system and BiOCl/BiVO 4 /N-GQD ternary heterojunctions also display a dramatically enhanced photodegradation rate. The proposed charge separation and transfer process of BiOCl/BiVO 4 /N-GQD ternary heterojunctions for the enhanced photoactivity were deduced by electrochemical measurements, photoluminescence, and electron spin resonance. The results demonstrate that a Z-scheme charge process was formed between BiOCl/BiVO 4 binary heterojunctions and N-GQDs, leading to an efficient charge carrier separation and strong photocatalytic ability. Notably, this work may assist in a better understanding of the role of N-GQDs in kinds of heterojunctions

  4. Revealing the recombination dynamics in squaraine-based bulk heterojunction solar cells

    Science.gov (United States)

    Scheunemann, Dorothea; Kolloge, Oliver; Wilken, Sebastian; Mack, Majvor; Parisi, Jürgen; Schulz, Matthias; Lützen, Arne; Schiek, Manuela

    2017-10-01

    We combine steady-state with transient optoelectronic characterization methods to understand the operation of photovoltaic devices based on a benchmark model squaraine blended with a fullerene acceptor. These devices suffer from a gradual decrease in the fill factor when increasing the active layer thickness and incident light intensity. Using transient photocurrent, transient photovoltage, and bias-assisted charge extraction measurements, we show that the fill factor deteriorates due to slow charge carrier collection competing with bimolecular recombination. Under normal operating conditions, we find a bimolecular recombination rate constant of ˜10-17 m3 s-1, which corresponds to a reduction of one to two orders of magnitude compared to the Langevin model.

  5. Oxide-Based Solar Cell: Impact of Layer Thicknesses on the Device Performance.

    Science.gov (United States)

    Panigrahi, Shrabani; Nunes, Daniela; Calmeiro, Tomás; Kardarian, Kasra; Martins, Rodrigo; Fortunato, Elvira

    2017-02-13

    A ZnO/Cu2O-based combinatorial heterojunction device library was successfully fabricated by a simple spray pyrolysis technique using ITO-coated glass as the substrate. The combinatorial approach was introduced to analyze the impact of the ZnO and Cu2O layer thicknesses on the performance of the solar cells. The thickness of the ZnO layer was varied from ∼50 to 320 nm, and the Cu2O layer was deposited orthogonal to the ZnO thickness gradient. In the case of Cu2O, the thickness varied from ∼200 to 800 nm. The photovoltaic performance of the cells is strongly dependent on the absorber layer thickness for a particular window layer thickness and reaches a maximum short-circuit current density of 3.9 mA/cm(2) when the absorber layer thickness just crosses ∼700 nm. Reducing the thicknesses of the active layers leads to a sharp decrease in the device performance. It is shown that the entire built-in bias of the heterojunction is created in the absorber layer due to low carrier density. The poor performance of the devices having lower thicknesses is attributed to different interfacial phenomena such as optical losses due to the thin Cu2O layer, back-contact recombination of the carriers due to the low layer thickness because a minimum heterojunction thickness is required for the formation of the full built-in bias that slows down the recombination of the carriers, and other factors.

  6. High breakdown voltage GaN-on-insulator based heterojunction field effect transistor with a partial back barrier layer

    Science.gov (United States)

    Du, Jiangfeng; Li, Ruonan; Bai, Zhiyuan; Liu, Yong; Yu, Qi

    2017-11-01

    A high breakdown voltage GaN-on-Insulator based heterojunction field effect transistor with a partial back barrier (PB-GOI HFET) is proposed in this paper. The partial back barrier (PB) formed by AlGaN is located in the GaN channel layer, which can make the breakdown voltage improved significantly by modulating the distribution of electric field along the channel. PB-GOI HFET can not only maintain the original advantages of GOI structure, but also improve the breakdown voltage without degradation of frequency performance. Compared with a conventional GOI HFET, the proposed PB-GOI HFET with gate-drain distance of 5 μm possesses the breakdown voltage of 1200 V and the FOM of 3.12 GW/cm2, which increased by more than 353% and 976%. The novel PB-GOI HFET shows great prospects in power electronics applications.

  7. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Science.gov (United States)

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  8. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    Energy Technology Data Exchange (ETDEWEB)

    Mascarenhas, Angelo

    2017-08-01

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  9. Simple, highly efficient vacuum-processed bulk heterojunction solar cells based on merocyanine dyes

    Energy Technology Data Exchange (ETDEWEB)

    Steinmann, Vera; Kronenberg, Nils M.; Lenze, Martin R.; Graf, Steven M.; Hertel, Dirk; Meerholz, Klaus [Department fuer Chemie, Universitaet Koeln, Luxemburger Strasse 116, 50939 Koeln (Germany); Buerckstuemmer, Hannah; Tulyakova, Elena V.; Wuerthner, Frank [Institut fuer Organische Chemie and Roentgen Research Center for Complex Material Systems, Universitaet Wuerzburg, Am Hubland, 97074 Wuerzburg (Germany)

    2011-10-15

    In order to be competitive on the energy market, organic solar cells with higher efficiency are needed. To date, polymer solar cells have retained the lead with efficiencies of up to 8%. However, research on small molecule solar cells has been catching up throughout recent years and is showing similar efficiencies, however, only for more sophisticated multilayer device configurations. In this work, a simple, highly efficient, vacuum-processed small molecule solar cell based on merocyanine dyes - traditional colorants that can easily be mass-produced and purified - is presented. In the past, merocyanines have been successfully introduced in solution-processed as well as vacuum-processed devices, demonstrating efficiencies up to 4.9%. Here, further optimization of devices is achieved while keeping the same simple layer stack, ultimately leading to efficiencies beyond the 6% mark. In addition, physical properties such as the charge carrier transport and the cell performance under various light intensities are addressed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Temperature dependent diode and photovoltaic characteristics of graphene-GaN heterojunction

    Science.gov (United States)

    Kalita, Golap; Dzulsyahmi Shaarin, Muhammad; Paudel, Balaram; Mahyavanshi, Rakesh; Tanemura, Masaki

    2017-07-01

    Understanding the charge carrier transport characteristics at the graphene-GaN interface is of significant importance for the fabrication of efficient photoresponsive devices. Here, we report on the temperature dependent diode and photovoltaic characteristics of a graphene/n-GaN heterostructure based Schottky junction. The graphene/n-GaN heterojunction showed rectifying diode characteristics and photovoltaic action with photoresponsivity in the ultra-violet wavelength. The current-voltage characteristics of the graphene/n-GaN heterojunction device were investigated under dark and light illumination with changes in temperature. Under dark conditions, an increase in the forward bias current as well as saturation current was observed, and a decrease in the device ideality factor was obtained with an increase in temperature. Under illumination of light, a decrease in the open circuit voltage (Voc) and an increase in the short circuit current density (Jsc) was obtained with an increase in temperature. The increase in saturation current and carrier recombination with the increase in temperature leads to a reduction in Voc, while the photo-generated carrier increases in the heterojunction interface at higher temperatures contributing to the increase in Jsc. The observed temperature dependent device characteristics of the graphene/n-GaN heterojunction can be significant to understand the junction behavior and photovoltaic action.

  11. Tunnel switch diode based on AlSb/GaSb heterojunctions

    OpenAIRE

    Cheng, X.-C.; Cartoixà, X.; Barton, M. A.; Hill, C. J.; McGill, T. C.

    2000-01-01

    We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated ...

  12. Ultimate efficiency of polymer/fullerene bulk heterojunction solar cells

    OpenAIRE

    Koster, LJA; Mihailetchi, VD; Blom, PWM

    2006-01-01

    We present model calculations to explore the potential of polymer/fullerene bulk heterojunction solar cells. As a starting point, devices based on poly(3-hexylthiophene) and 6,6-phenyl C-61-butyric acid methyl ester (PCBM), reaching 3.5% efficiency, are modeled. Lowering the polymeric band gap will lead to a device efficiency exceeding 6%. Tuning the electronic levels of PCBM in such a way that less energy is lost in the electron transfer process enhances the efficiency to values in excess of...

  13. Top-down prepared silicon nanocrystals and a conjugated polymer-based bulk heterojunction: Optoelectronic and photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Svrcek, Vladimir, E-mail: vladimir.svrcek@aist.go.jp [Novel Silicon Material Team, Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba 305-8568 (Japan); Fujiwara, Hiroyuki; Kondo, Michio [Novel Silicon Material Team, Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba 305-8568 (Japan)

    2009-12-15

    Blends consisting of doped silicon nanocrystals (Si-ncs) and two conjugated polymers (poly(3-hexylthiophene) (P3HT) and poly(methoxy ethylexyloxy phenylenevinilene) (MEH PPV)) with improved photostability were fabricated. We show that a top-down approach by electrochemical etching is suitable for preparing doped (boron and phosphorus) freestanding and surfactant-free Si-ncs. The doping of Si-ncs was confirmed by low temperature photoluminescence and electron spin resonance analysis. It is demonstrated that such Si-ncs can be successfully used for the fabrication of room temperature photoluminescent and photosensitive blends. We argue that the luminescence and transport properties of the blends are controlled by the Si-ncs properties and could be assigned to quantum confinement of excitons in nanocrystalites with an energy band gap of {approx}2 eV. Furthermore, the blending of doped Si-ncs in both conjugated polymers led to the establishment of a bulk heterojunction between the Si-ncs and polymer. The difference in electron affinity and ionization potential between nanocrystals and polymer dissociated the excitons. Those blends showed increased carrier transport and photoconductivity under ambient conditions. It was found that introduction of less defective p-type doped Si-ncs significantly improved overall photostability of the blend. The Si-ncs non-toxicity and easy integration into well-established silicon technologies might bring considerable benefit for hybrid optoelectronic and photovoltaic device development.

  14. Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

    KAUST Repository

    Wang, Zhenwei

    2016-08-30

    A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

  15. Semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  16. A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

    KAUST Repository

    Flemban, Tahani H.

    2017-09-19

    Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

  17. Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversion efficiency via adopting ultrathin Au contact

    Science.gov (United States)

    Fan, Lin; Wang, Fengyou; Liang, Junhui; Yao, Xin; Fang, Jia; Zhang, Dekun; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2017-01-01

    A rising candidate for upgrading the performance of an established narrow-bandgap solar technology without adding much cost is to construct the tandem solar cells from a crystalline silicon bottom cell and a high open-circuit voltage top cell. Here, we present a four-terminal tandem solar cell architecture consisting of a self-filtered planar architecture perovskite top cell and a silicon heterojunction bottom cell. A transparent ultrathin gold electrode has been used in perovskite solar cells to achieve a semi-transparent device. The transparent ultrathin gold contact could provide a better electrical conductivity and optical reflectance-scattering to maintain the performance of the top cell compared with the traditional metal oxide contact. The four-terminal tandem solar cell yields an efficiency of 14.8%, with contributions of the top (8.98%) and the bottom cell (5.82%), respectively. We also point out that in terms of optical losses, the intermediate contact of self-filtered tandem architecture is the uppermost problem, which has been addressed in this communication, and the results show that reducing the parasitic light absorption and improving the long wavelength range transmittance without scarifying the electrical properties of the intermediate hole contact layer are the key issues towards further improving the efficiency of this architecture device. Project supported by the International Cooperation Projects of the Ministry of Science and Technology (No. 2014DFE60170), the National Natural Science Foundation of China (Nos. 61474065, 61674084), the Tianjin Research Key Program of Application Foundation and Advanced Technology (No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province (No. BE2014147-3), and the 111 Project (No. B16027).

  18. Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

    Science.gov (United States)

    Hao, Lanzhong; Liu, Yunjie; Han, Zhide; Xu, Zhijie; Zhu, Jun

    2017-10-01

    Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS2/GaAs heterojunctions is investigated. The results show that a large LPE can be obtained in the MoS2/ n-GaAs heterojunction. The LPE exhibits a linear dependence on the position of the laser illumination and the considerably high sensitivity of 416.4 mV mm- 1. This sensitivity is much larger than the values in other reported MoS2-based devices. Comparatively, the LPE in the MoS2/ p-GaAs heterojunction is much weaker. The mechanisms to the LPE are unveiled by constructing the energy-band alignment of the MoS2/GaAs heterojunctions. The excellent LPE characteristics make MoS2 films combined with GaAs semiconductors promising candidates for the application of high-performance position-sensitive detectors.

  19. Efficiency of bulk-heterojunction organic solar cells

    Science.gov (United States)

    Scharber, M.C.; Sariciftci, N.S.

    2013-01-01

    During the last years the performance of bulk heterojunction solar cells has been improved significantly. For a large-scale application of this technology further improvements are required. This article reviews the basic working principles and the state of the art device design of bulk heterojunction solar cells. The importance of high power conversion efficiencies for the commercial exploitation is outlined and different efficiency models for bulk heterojunction solar cells are discussed. Assuming state of the art materials and device architectures several models predict power conversion efficiencies in the range of 10–15%. A more general approach assuming device operation close to the Shockley–Queisser-limit leads to even higher efficiencies. Bulk heterojunction devices exhibiting only radiative recombination of charge carriers could be as efficient as ideal inorganic photovoltaic devices. PMID:24302787

  20. Excitonic processes at organic heterojunctions

    Science.gov (United States)

    He, ShouJie; Lu, ZhengHong

    2018-02-01

    Understanding excitonic processes at organic heterojunctions is crucial for development of organic semiconductor devices. This article reviews recent research on excitonic physics that involve intermolecular charge transfer (CT) excitons, and progress on understanding relationships between various interface energy levels and key parameters governing various competing interface excitonic processes. These interface excitonic processes include radiative exciplex emission, nonradiative recombination, Auger electron emission, and CT exciton dissociation. This article also reviews various device applications involving interface CT excitons, such as organic light-emitting diodes (OLEDs), organic photovoltaic cells, organic rectifying diodes, and ultralow-voltage Auger OLEDs.

  1. Synthesis and Characterization of Reduced Graphene Oxide/Rhodamine 101 (rGO-Rh101) Nanocomposites and Their Heterojunction Performance in rGO-Rh101/p-Si Device Configuration

    Science.gov (United States)

    Batır, G. Güven; Arık, Mustafa; Caldıran, Zakir; Turut, Abdulmecit; Aydogan, Sakir

    2017-09-01

    Reduced graphene oxide (rGO)-rhodamine 101 (Rh101) nanocomposites with different ratios of rGO have been synthesized in aqueous medium by ultrasonic homogenization. The fluorescence of Rh101 as measured using a laser dye with high fluorescence quantum yield was substantially quenched with increasing amount of rGO in the nanocomposite. Formation of rGO-Rh101 nanocomposites was confirmed by x-ray diffraction analysis, scanning electron microscopy, ultraviolet-visible (UV-Vis) spectroscopy, and fluorescence microscopy. Furthermore, rGO-Rh101 nanocomposite/p-Si heterojunctions were synthesized, all of which showed good rectifying behavior. The electrical characteristics of these devices were analyzed using current-voltage (I-V) measurements to determine the ideality factor and barrier height. The experimental results confirmed the presence of lateral inhomogeneity in the effective barrier height of the rGO-Rh101 nanocomposite/p-Si heterojunctions. In addition to I-V measurements, one device was analyzed in more detail using frequency-dependent capacitance-voltage measurements. All electrical measurements were carried out at room temperature and in the dark.

  2. Synthesis and Characterization of Reduced Graphene Oxide/Rhodamine 101 (rGO-Rh101) Nanocomposites and Their Heterojunction Performance in rGO-Rh101/ p-Si Device Configuration

    Science.gov (United States)

    Batır, G. Güven; Arık, Mustafa; Caldıran, Zakir; Turut, Abdulmecit; Aydogan, Sakir

    2018-01-01

    Reduced graphene oxide (rGO)-rhodamine 101 (Rh101) nanocomposites with different ratios of rGO have been synthesized in aqueous medium by ultrasonic homogenization. The fluorescence of Rh101 as measured using a laser dye with high fluorescence quantum yield was substantially quenched with increasing amount of rGO in the nanocomposite. Formation of rGO-Rh101 nanocomposites was confirmed by x-ray diffraction analysis, scanning electron microscopy, ultraviolet-visible (UV-Vis) spectroscopy, and fluorescence microscopy. Furthermore, rGO-Rh101 nanocomposite/ p-Si heterojunctions were synthesized, all of which showed good rectifying behavior. The electrical characteristics of these devices were analyzed using current-voltage ( I- V) measurements to determine the ideality factor and barrier height. The experimental results confirmed the presence of lateral inhomogeneity in the effective barrier height of the rGO-Rh101 nanocomposite/ p-Si heterojunctions. In addition to I- V measurements, one device was analyzed in more detail using frequency-dependent capacitance-voltage measurements. All electrical measurements were carried out at room temperature and in the dark.

  3. Study About High Influence Doping to Base Resistance and Bandgap Narrowing at Si/Si1-xGex/Si Heterojunction Bipolar Transistor

    Directory of Open Access Journals (Sweden)

    Achmad Fadhol

    2010-10-01

    Full Text Available Heterojunction is a link formed bedween two semiconductor materials and differend bandgap which has thinness under 50nm and grow the mixture of plate SiGe as bases. The link is an abrupt link or graded one. In this research learnt formulation of doping concentration influence to basis resistance and bandgap narrowing through Si/Si1-xGex/Si Heterojunction Bipolar Transistor with abrupt emitter-basis link, besides taking care to mobility and basis wide to basis resistance, it is also influence of mole fraction to bandgap power. From the result shows that doping concentration addition of NB=5.1018 cm-3 to NB=5.1020 cm-3 in basis can decrease resistance basis value about 3.6%, increase bandgap narrowing about 0.126, and increase collector current density for about 1.36 times to Ge 24%.

  4. Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction

    KAUST Repository

    Sun, Haiding

    2017-09-21

    Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.

  5. Difluorobenzothiadiazole based two-dimensional conjugated polymers with triphenylamine substituted moieties as pendants for bulk heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    W. H. Lee

    2017-11-01

    Full Text Available Three donor/acceptor (D/A-type two-dimensional polythiophenes (PTs; PBTFA13, PBTFA12, PBTFA11 featuring difluorobenzothiadiazole (DFBT derivatives as the conjugated (acceptor units in the polymer backbone and tertbutyl–substituted triphenylamine (tTPA-containing moieties as (donor pendants have been synthesized and characterized. These PTs exhibited good thermal stabilities, broad absorption spectra, and narrow optical band gaps. The cutoff wavelength of the UV–Vis absorption band was red-shifted upon increasing the content of the DFBT units in the PTs. Bulk heterojunction solar cells having an active layer comprising blends of the PTs and fullerene derivatives [6,6] phenyl-C61/71-butyric acid methyl ester (PC61BM/PC71BM were fabricated; their photovoltaic performance was strongly dependent on the content of the DFBT derivative in the PT. Incorporating a suitable content of the DFBT derivative in the polymer backbone enhanced the solar absorption ability and conjugation length of the PTs. The photovoltaic properties of the PBTFA13-based solar cells were superior to those of the PBTFA11- and PBTFA12-based solar cells.

  6. Mechanistic insights into the photoinduced charge carrier dynamics of BiOBr/CdS nanosheet heterojunctions for photovoltaic application.

    Science.gov (United States)

    Jia, Huimin; Zhang, Beibei; He, Weiwei; Xiang, Yong; Zheng, Zhi

    2017-03-02

    The rational design of high performance hetero-structure photovoltaic devices requires a full understanding of the photoinduced charge transfer mechanism and kinetics at the interface of heterojunctions. In this paper, we intelligently fabricated p-BiOBr/n-CdS heterojunctions with perfect nanosheet arrays by using a facile successive ionic layer adsorption and reaction and chemical bath deposition methods at low temperature. A BiOBr/CdS heterojunction based solar cell has been fabricated which exhibited enhanced photovoltaic responses. Assisted by the surface photovoltage (SPV), transient photovoltage (TPV) and Kelvin probe technique, the photoinduced charge transfer dynamics on the BiOBr nanosheet and p-BiOBr/n-CdS interface were systematically investigated. It was found that the BiOBr/CdS nanosheet array heterojunctions were more efficient in facilitating charge carrier separation than both bare BiOBr and CdS films. The mechanism underlying the photoinduced charge carrier transfer behaviour was unravelled by allying the energy band of BiOBr/CdS p-n junctions from both the interfacial electric field and surface electric field. In addition, the CdS loading thickness in the p-BiOBr/n-CdS heterojunction and the incident wavelength affected greatly the transfer behavior of photoinduced charges, which was of great value for design of photovoltaic devices.

  7. Graphene-Based Integrated Photovoltaic Energy Harvesting/Storage Device.

    Science.gov (United States)

    Chien, Chih-Tao; Hiralal, Pritesh; Wang, Di-Yan; Huang, I-Sheng; Chen, Chia-Chun; Chen, Chun-Wei; Amaratunga, Gehan A J

    2015-06-24

    Energy scavenging has become a fundamental part of ubiquitous sensor networks. Of all the scavenging technologies, solar has the highest power density available. However, the energy source is erratic. Integrating energy conversion and storage devices is a viable route to obtain self-powered electronic systems which have long-term maintenance-free operation. In this work, we demonstrate an integrated-power-sheet, consisting of a string of series connected organic photovoltaic cells (OPCs) and graphene supercapacitors on a single substrate, using graphene as a common platform. This results in lighter and more flexible power packs. Graphene is used in different forms and qualities for different functions. Chemical vapor deposition grown high quality graphene is used as a transparent conductor, while solution exfoliated graphene pastes are used as supercapacitor electrodes. Solution-based coating techniques are used to deposit the separate components onto a single substrate, making the process compatible with roll-to-roll manufacture. Eight series connected OPCs based on poly(3-hexylthiophene)(P3HT):phenyl-C61-butyric acid methyl ester (PC60 BM) bulk-heterojunction cells with aluminum electrodes, resulting in a ≈5 V open-circuit voltage, provide the energy harvesting capability. Supercapacitors based on graphene ink with ≈2.5 mF cm(-2) capacitance provide the energy storage capability. The integrated-power-sheet with photovoltaic (PV) energy harvesting and storage functions had a mass of 0.35 g plus the substrate. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. 2 and 3 µm passively Q-switched bulk pulse laser based on a MoS2/graphene heterojunction

    Science.gov (United States)

    Wang, Xihu; Xu, Jinlong; Sun, Yijian; Feng, Wendou; You, Zhenyu; Sun, Dunlu; Tu, Chaoyang

    2018-01-01

    We report for the first time that a MoS2/graphene heterojunction can behave as a saturable absorber to realize 2 and 3 µm passively Q-switched bulk lasers. This heterojunction is prepared through a facile hydrothermal method. For the 2 µm laser, a stable pulse is obtained with a pulse duration of 473 ns, output power of 553 mW, pulse energy of 5.267 µJ and repetition rate of 105 kHz. For the 3 µm laser, a pulse duration of 355 ns is observed with an average output power of 112 mW and pulse energy of 0.889 µJ. These results indicate the great potential of MoS2/graphene heterojunctions for realizing mid-infrared pulse lasers.

  9. Remarkably High Conversion Efficiency of Inverted Bulk Heterojunction Solar Cells: From Ultrafast Laser Spectroscopy and Electron Microscopy to Device Fabrication and Optimization

    KAUST Repository

    Alsulami, Qana

    2016-04-10

    In organic donor-acceptor systems, ultrafast interfacial charge transfer (CT), charge separation (CS), and charge recombination (CR) are key determinants of the overall performance of photovoltaic devices. However, a profound understanding of these photophysical processes at device interfaces remains superficial, creating a major bottleneck that circumvents advancements and the optimization of these solar cells. Here, results from time-resolved laser spectroscopy and high-resolution electron microscopy are examined to provide the fundamental information necessary to fabricate and optimize organic solar cell devices. In real time, CT and CS are monitored at the interface between three fullerene acceptors (FAs) (PC71BM, PC61BM, and IC60BA) and the PTB7-Th donor polymer. Femtosecond transient absorption (fs-TA) data demonstrates that photoinduced electron transfer from the PTB7-Th polymer to each FA occurs on the sub-picosecond time scale, leading to the formation of long-lived radical ions. It is also found that the power conversion efficiency improves from 2% in IC60BA-based solar cells to >9% in PC71BM-based devices, in support of our time-resolved results. The insights reported in this manuscript provide a clear understanding of the key variables involved at the device interface, paving the way for the exploitation of efficient CS and subsequently improving the photoconversion efficiency. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Preparation of Single-Crystalline Heterojunctions for Organic Electronics.

    Science.gov (United States)

    Wu, Jiake; Li, Qinfen; Xue, Guobiao; Chen, Hongzheng; Li, Hanying

    2017-04-01

    Organic single-crystalline heterojunctions are composed of different single crystals interfaced together. The intrinsic highly ordered heterostructure in these multicomponent solids holds the capacity for multifunctions, as well as superior charge-transporting properties, promising high-performance electronic applications such as ambipolar transistors and solar cells. However, this kind of heterojunction is not easily available and the preparation methods need to be developed. Recent advances in the efficient strategies that have emerged in yielding high-quality single-crystalline heterojunctions are highlighted here. The advantages and limitations of each strategy are also discussed. The obtained single-crystalline heterojunctions have started to exhibit rich physical properties, including metallic conduction, photovoltaic effects, and so on. Further structural optimization of the heterojunctions to accommodate the electronic device configuration is necessary to significantly advance this research direction. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Recombinant protein-based nanoscale biomemory devices.

    Science.gov (United States)

    Yagati, A K; Min, J; Choi, J W

    2014-01-01

    Biomolecular computing devices that are based on the properties of biomolecular activities offer a unique possibility for constructing new computing structures. A new concept of using various biomolecules has been proposed in order to develop a protein-based memory device that is capable of switching physical properties when electrical input signals are applied to perform memory switching. To clarify the proposed concept, redox protein is immobilized on Au nanoelectrodes to catalyze reversible reactions of redox-active molecules, which is controlled electrochemically and reversibly converted between its ON/OFF states. In this review, we summarize recent research towards developing nanoscale biomemory devices including design, synthesis, fabrication, and functionalization based on the proposed concept. At first we analyze the memory function properties of the proposed device at bulk material level and then explain the WORM (write-once-read-many times) nature of the device, later we extend the analysis to multi-bit and multi-level storage functions, and then we focus the developments in nanoscale biomemory devices based on the electron transport of redox molecules to the underlying Au patterned surface. The developed device operates at very low voltages and has good stability and excellent reversibility, proving to be a promising platform for future memory devices.

  12. Interface Recombination in Depleted Heterojunction Photovoltaics based on Colloidal Quantum Dots

    KAUST Repository

    Kemp, Kyle W.

    2013-03-26

    Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2 -PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Ontology-Based Device Descriptions and Device Repository for Building Automation Devices

    Directory of Open Access Journals (Sweden)

    Dibowski Henrik

    2011-01-01

    Full Text Available Device descriptions play an important role in the design and commissioning of modern building automation systems and help reducing the design time and costs. However, all established device descriptions are specialized for certain purposes and suffer from several weaknesses. This hinders a further design automation, which is strongly needed for the more and more complex building automation systems. To overcome these problems, this paper presents novel Ontology-based Device Descriptions (ODDs along with a layered ontology architecture, a specific ontology view approach with virtual properties, a generic access interface, a triple store-based database backend, and a generic search mask GUI with underlying query generation algorithm. It enables a formal, unified, and extensible specification of building automation devices, ensures their comparability, and facilitates a computer-enabled retrieval, selection, and interoperability evaluation, which is essential for an automated design. The scalability of the approach to several ten thousand devices is demonstrated.

  14. Temperature dependent characteristics of poly(3 hexylthiophene)-fullerene based heterojunction organic solar cells

    NARCIS (Netherlands)

    Chirvase, D; Chiguvare, Z; Knipper, M; Parisi, J; Dyakonov, [No Value; Hummelen, JC

    2003-01-01

    Electrical and optical properties of poly(3-hexylthiophene-2.5diyl) (P3HT) used as the main component in a polymer/fullerene solar cell were studied. From the study of space-charge limited current behavior of indium-tin-oxide (ITO)/P3HT/Au hole-only devices, the hole mobility and density were

  15. p-n Heterojunction of doped graphene films obtained by pyrolysis of biomass precursors.

    Science.gov (United States)

    Latorre-Sánchez, Marcos; Primo, Ana; Atienzar, Pedro; Forneli, Amparo; García, Hermenegildo

    2015-02-25

    Nitrogen-doped graphene [(N)G] obtained by pyrolysis at 900 °C of nanometric chitosan films exhibits a Hall effect characteristic of n-type semiconductors. In contrast, boron-doped graphene [(B)G] obtained by pyrolysis of borate ester of alginate behaves as a p-type semiconductor based also on the Hall effect. A p-n heterojunction of (B)G-(N)G films is built by stepwise coating of a quartz plate using a mask. The heterojunction is created by the partial overlapping of the (B)G-(N)G films. Upon irradiation with a xenon lamp of aqueous solutions of H(2) PtCl(6) and MnCl(2) in contact with the heterojunction, preferential electron migration from (B)G to (N)G with preferential location of positive holes on (B)G is established by observation in scanning electron microscopy of the formation of Pt nanoparticles (NP) on (N)G and MnO(2) NP on (B)G. The benefits of the heterojunction with respect to the devices having one individual component as a consequence of the electron migration through the p-n heterojunction are illustrated by measuring the photocurrent in the (B)G-(N)G heterojunction (180% current enhancement with respect to the dark current) and compared it to the photocurrent of the individual (B)G (15% enhancement) and (N)G (55% enhancement) components. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    Science.gov (United States)

    Wong, Terence K. S.; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K.

    2016-01-01

    The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%. PMID:28773398

  17. Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Terence K. S. Wong

    2016-04-01

    Full Text Available The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O, cupric oxide (CuO and copper (III oxide (Cu4O3 is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%.

  18. Paper based microfluidic devices for environmental diagnostics

    CSIR Research Space (South Africa)

    Govindasamy, K

    2012-09-01

    Full Text Available Microfluidics has found widespread application in the fields of molecular biology, DNA analysis and most recently, point of care diagnostics. We present a paper based microfluidic device for rapid, in-the-field detection of pathogenic bacteria...

  19. Phosphonium Halides as Both Processing Additives and Interfacial Modifiers for High Performance Planar-Heterojunction Perovskite Solar Cells.

    Science.gov (United States)

    Sun, Chen; Xue, Qifan; Hu, Zhicheng; Chen, Ziming; Huang, Fei; Yip, Hin-Lap; Cao, Yong

    2015-07-15

    Organic halide salts are successfully incorporated in perovskite-based planar-heterojunction solar cells as both the processing additive and interfacial modifier to improve the morphology of the perovskite light-absorbing layer and the charge collecting property of the cathode. As a result, perovskite solar cells exhibit a significant improvement in power conversion efficiency (PCE) from 10% of the reference device to 13% of the modified devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Magnetic skyrmion-based synaptic devices

    Science.gov (United States)

    Huang, Yangqi; Kang, Wang; Zhang, Xichao; Zhou, Yan; Zhao, Weisheng

    2017-02-01

    Magnetic skyrmions are promising candidates for next-generation information carriers, owing to their small size, topological stability, and ultralow depinning current density. A wide variety of skyrmionic device concepts and prototypes have recently been proposed, highlighting their potential applications. Furthermore, the intrinsic properties of skyrmions enable new functionalities that may be inaccessible to conventional electronic devices. Here, we report on a skyrmion-based artificial synapse device for neuromorphic systems. The synaptic weight of the proposed device can be strengthened/weakened by positive/negative stimuli, mimicking the potentiation/depression process of a biological synapse. Both short-term plasticity and long-term potentiation functionalities have been demonstrated with micromagnetic simulations. This proposal suggests new possibilities for synaptic devices in neuromorphic systems with adaptive learning function.

  1. Magnetic skyrmion-based synaptic devices.

    Science.gov (United States)

    Huang, Yangqi; Kang, Wang; Zhang, Xichao; Zhou, Yan; Zhao, Weisheng

    2017-02-24

    Magnetic skyrmions are promising candidates for next-generation information carriers, owing to their small size, topological stability, and ultralow depinning current density. A wide variety of skyrmionic device concepts and prototypes have recently been proposed, highlighting their potential applications. Furthermore, the intrinsic properties of skyrmions enable new functionalities that may be inaccessible to conventional electronic devices. Here, we report on a skyrmion-based artificial synapse device for neuromorphic systems. The synaptic weight of the proposed device can be strengthened/weakened by positive/negative stimuli, mimicking the potentiation/depression process of a biological synapse. Both short-term plasticity and long-term potentiation functionalities have been demonstrated with micromagnetic simulations. This proposal suggests new possibilities for synaptic devices in neuromorphic systems with adaptive learning function.

  2. Unidirectional Light Beam Splitter Based on the Square-Lattice Photonic Crystal Heterojunctions

    Science.gov (United States)

    Feng, Shuai; Wang, Wenzhong; Wang, Yiquan

    2012-11-01

    The unidirectional light transmission characteristics of the two-dimensional square-lattice photonic crystal heterostructure consisting of air holes immersed in silicon are numerically studied by the finite-difference time-domain method. Through interlacing the air holes with different radiuses on the interface vertical to the light transmission direction, a new kind of unidirectional beam splitter is obtained. This kind of beam splitting device works well with a tolerance within 10% degree of radial disorder or 5% degree of positional disorder.

  3. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    Energy Technology Data Exchange (ETDEWEB)

    Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Winata, Toto, E-mail: toto@fi.itb.ac.id [Department of physics, physics of electronic materials research division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10, Bandung 40132, Jawa Barat – Indonesia (Indonesia)

    2016-04-19

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  4. High speed heterostructure devices

    CERN Document Server

    Beer, Albert C; Willardson, R K; Kiehl, Richard A; Sollner, T C L Gerhard

    1994-01-01

    Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices.

  5. High efficiency CuInSe/sub 2/ based heterojunction solar cells: Fabrication and results

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W.; DiNetta, L.C.; Lasswell, P.G.; Meakin, J.D.; Phillips, J.E.

    1986-01-15

    A process for fabricating CuInSe/sub 2//CdS solar cells is described. A data set of 202 substrates each containing 12 cells from 129 separate deposition runs is used to examine the processing parameters for fabricating high efficiency cells. The data show a broad range of CuInSe/sub 2/ compositions over which high efficiency cells can be made. The use of a thin layer, less than 2 ..mu..m in thickness, can increase the short-circuit current by more than 3 mA cm/sup -2/. High efficiency devices have also been made on low cost sodalime glass. Air heat treatments at 200/sup 0/C for between 8 and 60 h are required to optimize the output of the CuInSe/sub 2//CdS cells.

  6. Nucleic acid based molecular devices.

    Science.gov (United States)

    Krishnan, Yamuna; Simmel, Friedrich C

    2011-03-28

    In biology, nucleic acids are carriers of molecular information: DNA's base sequence stores and imparts genetic instructions, while RNA's sequence plays the role of a messenger and a regulator of gene expression. As biopolymers, nucleic acids also have exciting physicochemical properties, which can be rationally influenced by the base sequence in myriad ways. Consequently, in recent years nucleic acids have also become important building blocks for bottom-up nanotechnology: as molecules for the self-assembly of molecular nanostructures and also as a material for building machinelike nanodevices. In this Review we will cover the most important developments in this growing field of nucleic acid nanodevices. We also provide an overview of the biochemical and biophysical background of this field and the major "historical" influences that shaped its development. Particular emphasis is laid on DNA molecular motors, molecular robotics, molecular information processing, and applications of nucleic acid nanodevices in biology. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Hybrid Perovskite/Perovskite Heterojunction Solar Cells.

    Science.gov (United States)

    Hu, Yinghong; Schlipf, Johannes; Wussler, Michael; Petrus, Michiel L; Jaegermann, Wolfram; Bein, Thomas; Müller-Buschbaum, Peter; Docampo, Pablo

    2016-06-28

    Recently developed organic-inorganic hybrid perovskite solar cells combine low-cost fabrication and high power conversion efficiency. Advances in perovskite film optimization have led to an outstanding power conversion efficiency of more than 20%. Looking forward, shifting the focus toward new device architectures holds great potential to induce the next leap in device performance. Here, we demonstrate a perovskite/perovskite heterojunction solar cell. We developed a facile solution-based cation infiltration process to deposit layered perovskite (LPK) structures onto methylammonium lead iodide (MAPI) films. Grazing-incidence wide-angle X-ray scattering experiments were performed to gain insights into the crystallite orientation and the formation process of the perovskite bilayer. Our results show that the self-assembly of the LPK layer on top of an intact MAPI layer is accompanied by a reorganization of the perovskite interface. This leads to an enhancement of the open-circuit voltage and power conversion efficiency due to reduced recombination losses, as well as improved moisture stability in the resulting photovoltaic devices.

  8. a-Axis GaN/AlN/AlGaN Core-Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors.

    Science.gov (United States)

    Song, Weidong; Wang, Rupeng; Wang, Xingfu; Guo, Dexiao; Chen, Hang; Zhu, Yuntao; Liu, Liu; Zhou, Yu; Sun, Qian; Wang, Li; Li, Shuti

    2017-11-29

    Micro/nanowire-based devices have been envisioned as a promising new route toward improved electronic and optoelectronic applications, which attracts considerable research interests. However, suffering from applicable strategies to synthesize uniform core-shell structures to meet the requirement for the investigations of electrical transport behaviors along the length direction or high electron mobility transistor (HEMT) devices, heterojunction wire-based electronics have been explored limitedly. In the present work, GaN/AlN/AlGaN core-shell heterojunction microwires on patterned Si substrates were synthesized without any catalyst via metalorganic chemical vapor deposition. The as-synthesized microwires had low dislocation, sharp, and uniform heterojunction interfaces. Electrical transport performances were evaluated by fabricating HEMTs on the heterojunction microwire channels. Results demonstrated that a normally off operation was achieved with a threshold voltage of 1.4 V, a high on/off current ratio of 108, a transconductance of 165 mS/mm, and a low subthreshold swing of 81 mV/dec. The normally off operation may attribute to the weak polarization along semipolar facets of the heterojunction, which leads to weak constrain of 2DEG.

  9. The influence of molecular orientation on organic bulk heterojunction solar cells

    Science.gov (United States)

    Tumbleston, John R.; Collins, Brian A.; Yang, Liqiang; Stuart, Andrew C.; Gann, Eliot; Ma, Wei; You, Wei; Ade, Harald

    2014-05-01

    In bulk heterojunction organic photovoltaics, electron-donating and electron-accepting materials form a distributed network of heterointerfaces in the photoactive layer, where critical photo-physical processes occur. However, little is known about the structural properties of these interfaces due to their complex three-dimensional arrangement and the lack of techniques to measure local order. Here, we report that molecular orientation relative to donor/acceptor heterojunctions is an important parameter in realizing high-performance fullerene-based, bulk heterojunction solar cells. Using resonant soft X-ray scattering, we characterize the degree of molecular orientation, an order parameter that describes face-on (+1) or edge-on (-1) orientations relative to these heterointerfaces. By manipulating the degree of molecular orientation through the choice of molecular chemistry and the characteristics of the processing solvent, we are able to show the importance of this structural parameter on the performance of bulk heterojunction organic photovoltaic devices featuring the electron-donating polymers PNDT-DTBT, PBnDT-DTBT or PBnDT-TAZ.

  10. Confinement-induced reduction in phase segregation and interchain disorder in bulk heterojunction films.

    Science.gov (United States)

    Ashraf, Ahsan; Dissanayake, D M Nanditha M; Germack, David S; Weiland, Conan; Eisaman, Matthew D

    2014-01-28

    The effects of thin-film confinement on the material properties of ultrathin polymer (electron donor):fullerene (electron acceptor) bulk heterojunction films can be important for both fundamental understanding and device applications such as thin-film photovoltaics. We use variable angle spectroscopic ellipsometry and near edge X-ray absorption fine structure spectroscopy to measure the optical constants, donor-acceptor volume fraction profile, and the degree of interchain order as a function of the thickness of a poly(3-hexythiophene-2,5-diyl) and phenyl-C61-butyric acid methyl ester bulk heterojunction film. We find that as the thickness of the bulk heterojunction film is decreased from 200 nm to the thickness confinement regime (less than 20 nm), the vertical phase segregation gradient of the donor and acceptor phases becomes less pronounced. In addition, observing the change in exciton bandwidth and the shift of absorption resonances (0-0 and 0-1) relative to neat donor and acceptor films, we find that the conjugation length and disorder in ultrathin films (20 nm) are less affected than thicker (200 nm) films by the addition of fullerene into the polymer. We believe that these findings could be important for discovering methods of precisely controlling the properties of bulk heterojunction films with crucial implications for designing more efficient organic-based photovoltaics.

  11. Back contact formation for p-type based a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tucci, Mario; Serenelli, Luca; De Iuliis, Simona; Izzi, Massimo [ENEA Research Center Casaccia, Via Anguillarese 301, 00123 Rome (Italy); De Cesare, Giampiero; Caputo, Domenico [Department of Electronic Engineering, University ' ' Sapienza' ' , Via Eudossiana 18, 00184 Rome (Italy)

    2011-03-15

    Even if p-type silicon is a more common PV material, heterojunction solar cells on p-type c-Si are less popular than on n-type. In turn, it has been difficult to achieve high efficiency with double-sided heterojunction with intrinsic thin layer structure on p-type c-Si. The double-sided silicon heterojunction solar cell is more appropriate for n-type crystalline silicon wafers than for p-type c-Si ones because of larger band offset at the valence band edge between the amorphous and crystalline semiconductors with respect to the conduction band edge. Indeed, it represents a large barrier for majority carrier holes flowing through to the back contact. In turn at the backside, the small conduction band offset provides a much less effective mirror for the minority carrier electrons. We have found an alternative way to obtain a quasi-ohmic contact promoting the formation of a CrSi film on top of p-a-Si:H layer. This reduces the problem of low p-a-Si:H doping value and the high activation energy, leading to a better carrier collection. In this work we present a detailed investigation of the p-c-Si/i-a-Si:H/p-a-Si:H contact, comparing the experimental transport measurements with numerical model of the stacked structure. We verify the effectiveness of p-c-Si/i-a-Si:H/p-a-Si:H as back side contact on the heterojunction solar cell performances. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Torsion based universal MEMS logic device

    KAUST Repository

    Ilyas, Saad

    2015-10-28

    In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

  13. [Device-based remote monitoring : Current evidence].

    Science.gov (United States)

    Duncker, David; Michalski, Roman; Müller-Leisse, Johanna; Zormpas, Christos; König, Thorben; Veltmann, Christian

    2017-09-01

    Telemedicine is increasingly used in clinical cardiology. It offers early detection of arrhythmias, technical device follow-up and support of heart failure management. Regarding technical device follow-up, remote monitoring significantly reduces usage of the health care system. Furthermore, remote monitoring is associated with a significantly reduced time from device malfunction to physician's perception of the event. Using remote monitoring, inappropriate ICD (implantable cardioverter defibrillator) shocks can be significantly reduced compared to routine in-office follow-up. In retrospective studies and meta-analyses a prognostic benefit with respect to mortality has been shown. Device-based detection of atrial fibrillation and atrial high rate episodes is feasible. However, clinical relevance is currently studied in prospective randomized clinical trials. Heart failure management based on surrogate parameters has not been shown to significantly improve outcome. However, therapeutic management based on pulmonary artery pressure has been shown to significantly reduce morbidity and mortality. This review offers a comprehensive overview on the role of remote monitoring in heart failure management, technical device follow-up and detection of atrial fibrillation and atrial high rate episodes.

  14. Organic photosensitive devices

    Science.gov (United States)

    Peumans, Peter; Forrest, Stephen R.

    2013-01-22

    A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm.sup.2/V-sec, and more preferably greater than 1 cm.sup.2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.

  15. Physics of semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Prew, B.A.

    1975-09-01

    The properties of semiconductors which make them important in the electronic devices industry, and how these properties are controlled by doping, are described. The physics and applications of p-n and other junction devices, and of bulk effect devices are discussed. Avalanche devices, optical devices, solar cells, Schottky barriers, MOS devices, heterojunctions, photoconductors, and transferred electron devices are considered.

  16. Perovskite-based solar cells with inorganic inverted hybrid planar heterojunction structure

    Directory of Open Access Journals (Sweden)

    Wei-Chih Lai

    2018-01-01

    Full Text Available We demonstrated the good performance of inorganic inverted CH3NH3PbI3 perovskite-based solar cells (SCs with glass/ITO/NiOx/CH3NH3PbI3 perovskite/C60/ room temperature (RT-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiOx and ZnO, respectively. The inorganic hole and electron transport layer of NiOx and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (VOC, short-circuit current density (JSC, and power conversion efficiency (η% of the SCs. We obtained inorganic inverted CH3NH3PbI3 perovskite-based SCs with a JSC of 21.96 A/cm2, a VOC of 1.02 V, a fill factor (FF% of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O2. The inorganic inverted CH3NH3PbI3 perovskite-based SCs demonstrated improved storage reliability.

  17. Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films.

    Science.gov (United States)

    Peumans, Peter; Uchida, Soichi; Forrest, Stephen R

    2003-09-11

    The power conversion efficiency of small-molecular-weight and polymer organic photovoltaic cells has increased steadily over the past decade. This progress is chiefly attributable to the introduction of the donor-acceptor heterojunction that functions as a dissociation site for the strongly bound photogenerated excitons. Further progress was realized in polymer devices through use of blends of the donor and acceptor materials: phase separation during spin-coating leads to a bulk heterojunction that removes the exciton diffusion bottleneck by creating an interpenetrating network of the donor and acceptor materials. The realization of bulk heterojunctions using mixtures of vacuum-deposited small-molecular-weight materials has, on the other hand, posed elusive: phase separation induced by elevating the substrate temperature inevitably leads to a significant roughening of the film surface and to short-circuited devices. Here, we demonstrate that the use of a metal cap to confine the organic materials during annealing prevents the formation of a rough surface morphology while allowing for the formation of an interpenetrating donor-acceptor network. This method results in a power conversion efficiency 50 per cent higher than the best values reported for comparable bilayer devices, suggesting that this strained annealing process could allow for the formation of low-cost and high-efficiency thin film organic solar cells based on vacuum-deposited small-molecular-weight organic materials.

  18. Electron-hole capture in polymer heterojunction light-emitting diodes

    Science.gov (United States)

    Greenham, Neil

    2005-03-01

    Polymer light-emitting diodes based on blends of polyfluorene derivatives show very high efficiencies and low drive voltages. Electron-hole capture in these devices directly produces long-lived exciplex states where the electron and hole are predominantly localized on opposite sides of the heterojunction. The exciplex may then be thermally excited to form an intra-chain exciton, which can itself either emit, or be recycled to reform the exciplex. I will review the physics of exciplex formation and emission in these devices, and will show that exciplex formation rates are consistent with low free charge densities at the heterojunction. I will present evidence that the rate of charge transfer at polyfluorene heterojunctions can be modulated with an applied electric field, leading in some cases to an increase in photoluminescence efficiency with applied field. I will also present recent results showing enhanced triplet exciton formation after photoexcitation in polyfluorene blends, and will discuss the implications of the results for polymer light-emitting and photovoltaic devices.

  19. Efficient bulk heterojunction photovoltaic cells using small-molecular-weight organic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Peumans, Peter; Uchida, Soichi; Forrest, Stephen R. [Princeton Univ., Dept. of Electrical Engineering, Princeton, NJ (United States); Princeton Univ., Princeton Materials Inst., Princeton, NJ (United States)

    2003-09-11

    The power conversion efficiency of small-molecular-weight and polymer organic photovoltaic cells has increased steadily over the past decade. This progress is chiefly attributable to the introduction of the donor-acceptor heterojunction that functions as a dissociation site for the strongly bound photogenerated excitons. Further progress was realized in polymer devices through use of blends of the donor and acceptor materials: phase separation during spin-coating leads to a bulk heterojunction that removes the exciton diffusion bottleneck by creating an interpenetrating network of the donor and acceptor materials. The realization of bulk heterojunctions using mixtures of vacuum-deposited small-molecular-weight materials has, on the other hand, posed elusive: phase separation induced by elevating the substrate temperature inevitably leads to a significant roughening of the film surface and to short-circuited devices. Here, we demonstrate that the use of a metal cap to confine the organic materials during annealing prevents the formation of a rough surface morphology while allowing for the formation of an interpenetrating donor-acceptor network. This method results in a power conversion efficiency 50 per cent higher than the best values reported for comparable bilayer devices, suggesting that this strained annealing process could allow for the formation of low-cost and high-efficiency thin film organic solar cells based on vacuum-deposited small-molecular-weight organic materials. (Author)

  20. Magnetic Field Effect in Conjugated Molecules-Based Devices

    Science.gov (United States)

    2017-10-23

    2. “The origins in the transformation of ambipolar to n-type pentacene-based organic field-effect transistors” Org. Electron. 15, 1759 (2014...J. M., Li, Y., He, Y., Trevor, M. & Park , N.-G. Dual function interfacial layer for highly efficient and stable lead halide perovskite solar cells...CH3NH3PbI3 perovskite/PCBM planar-heterojunction hybrid solar cells. Adv. Mater. 26, 4107 (2014). 20. Park , J. H., Seo, J., Park , S., Shin, S. S

  1. Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions

    KAUST Repository

    Chiu, Ming-Hui

    2016-09-20

    It is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls the electronic and optical properties. However, the well-known Anderson\\'s model usually fails to predict the band alignment in bulk HJ systems due to the presence of charge transfer at the interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since the ultrathin HJs and devices can be easily built and they are promising for future electronics. The vertical HJs based on 2D materials can be constructed via van der Waals stacking regardless of the lattice mismatch between two materials. Despite the defect-free characteristics of the junction interface, experimental evidence is still lacking on whether the simple Anderson rule can predict the band alignment of HJs. Here, the validity of Anderson\\'s model is verified for the 2D heterojunction systems and the success of Anderson\\'s model is attributed to the absence of dangling bonds (i.e., interface dipoles) at the van der Waal interface. The results from the work set a foundation allowing the use of powerful Anderson\\'s rule to determine the band alignments of 2D HJs, which is beneficial to future electronic, photonic, and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Plasmonic organic photovoltaic devices with graphene based buffer layers for stability and efficiency enhancement

    Science.gov (United States)

    Stratakis, Emmanuel; Stylianakis, Minas M.; Koudoumas, Emmanuel; Kymakis, Emmanuel

    2013-05-01

    Enhancement of photoconversion efficiency (PCE) and stability in bulk heterojunction (BHJ) plasmonic organic photovoltaic devices (OPVs) incorporating graphene oxide (GO) thin films as the hole transport layer (HTL) and surfactant free Au nanoparticles (NPs) between the GO HTL and the photoactive layers is demonstrated. In particular the plasmonic GO-based devices exhibited a performance enhancement by 30% compared to the devices using the traditional PEDOT:PSS layer. Likewise, they preserved 50% of their initial PCE after 45 h of continuous illumination, contrary to the PEDOT:PSS-based ones that die after 20 h. The performance increase is attributed to the improved photocurrent and fill factor owing to the enhanced exciton generation rate due to NP-induced plasmon absorption enhancement. Besides this, the stability enhancement can be attributed to limited oxygen and/or indium diffusion from the indium tin oxide (ITO) electrode into the active layer. The industrial exploitation of composite GO/NPs as efficient buffer layers in OPVs is envisaged.

  3. Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity

    Science.gov (United States)

    Kurishima, Kenji; Ida, Minoru; Kashio, Norihide; K. Fukai, Yoshino

    This paper investigates the effects of n-type doping in the emitter-base heterojunction vicinity on the DC and high-frequency characteristics of InP/InGaAs heterojunction bipolar transistors (HBTs). The n-type doping is shown to be very effective for enhancing the tunneling-injection current from the emitter and thus for reducing the collector-current turn-on voltage. However, it is also revealed that an unnecessary increase in the doping level only degrades the current gain, especially in the low-current region. A higher doping level also increases the emitter junction capacitance. The optimized HBT structures with a 0.5-µm-wide emitter exhibit turn-on voltage as low as 0.78V and current gain of around 80 at JC =1mA/µm2. They also provide a current-gain cutoff frequency, ft, of 280GHz and a maximum oscillation frequency, fmax, of 385GHz at VCE =1V and JC =3mA/µm2. These results indicate that the proposed HBTs are very useful for high-speed and low-power IC applications.

  4. High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Lanyi; Ying, Jun; Han, Jinhua; Zhang, Letian, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn; Wang, Wei, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2016-04-25

    In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electrons transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.

  5. Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

    Science.gov (United States)

    Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

    2011-12-07

    Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

  6. Fiber-Cavity-Based Optomechanical Device

    CERN Document Server

    Flowers-Jacobs, N E; Sankey, J C; Kashkanova, A; Jayich, A M; Deutsch, C; Reichel, J; Harris, J G E

    2012-01-01

    We describe an optomechanical device consisting of a fiber-based optical cavity containing a silicon nitiride membrane. In comparison with typical free-space cavities, the fiber-cavity's small mode size (10 {\\mu}m waist, 80 {\\mu}m length) allows the use of smaller, lighter membranes and increases the cavity-membrane linear coupling to 3 GHz/nm and quadratic coupling to 20 GHz/nm^2. This device is also intrinsically fiber-coupled and uses glass ferrules for passive alignment. These improvements will greatly simplify the use of optomechanical systems, particularly in cryogenic settings. At room temperature, we expect these devices to be able to detect the shot noise of radiation pressure.

  7. Cellphone-based devices for bioanalytical sciences.

    Science.gov (United States)

    Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E Marion; Zengerle, Roland; Ozcan, Aydogan

    2014-05-01

    During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This report aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities.

  8. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding

    2017-10-16

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  10. Engineering heterojunctions with carbon nanostructures: towards high-performance optoelectronics

    Science.gov (United States)

    Wu, Judy Z.

    2015-08-01

    Low-dimensional carbon nanostructures such as nanotubes (CNTs) and graphene have excellent electronic, optoelectronic and mechanical properties, which provide fresh opportunities for designs of optoelectronic devices of extraordinary performance in addition to the benefits of low cost, large abundance, and light weight. This work investigates photodetectors made with CNTs and graphene with a particular focus on carbon-based nanohybrids aiming at a nanoscale control of photon absorption, exciton dissociation and charge transfer. Through several examples including graphene/GaSe-nanosheets, graphene/aligned ZnO nanorods, SWCNT/P3HT, and SWCNT/biomolecule, we show an atomic-scale control on the interfacial heterojunctions is the key to high responsivity and fast photoresponse in these nanohybrids optoelectronic devices.

  11. Carbon Nanotube Paper-Based Electroanalytical Devices

    Directory of Open Access Journals (Sweden)

    Youngmi Koo

    2016-04-01

    Full Text Available Here, we report on carbon nanotube paper-based electroanalytical devices. A highly aligned-carbon nanotube (HA-CNT array, grown using chemical vapor deposition (CVD, was processed to form bi-layered paper with an integrated cellulose-based Origami-chip as the electroanalytical device. We used an inverse-ordered fabrication method from a thick carbon nanotube (CNT sheet to a thin CNT sheet. A 200-layered HA-CNT sheet and a 100-layered HA-CNT sheet are explored as a working electrode. The device was fabricated using the following methods: (1 cellulose-based paper was patterned using a wax printer, (2 electrical connection was made using a silver ink-based circuit printer, and (3 three electrodes were stacked on a 2D Origami cell. Electrochemical behavior was evaluated using electrochemical impedance spectroscopy (EIS and cyclic voltammetry (CV. We believe that this platform could attract a great deal of interest for use in various chemical and biomedical applications.

  12. ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

    Energy Technology Data Exchange (ETDEWEB)

    Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

    2014-12-15

    Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

  13. Fabrication and characterization of Ga-doped ZnO / Si heterojunction nanodiodes

    Science.gov (United States)

    Akgul, Guvenc; Akgul, Funda Aksoy

    2017-02-01

    In this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 103 ±3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.

  14. Fiber Bragg grating based arterial localization device

    Science.gov (United States)

    Ho, Siu Chun Michael; Li, Weijie; Razavi, Mehdi; Song, Gangbing

    2017-06-01

    A critical first step to many surgical procedures is locating and gaining access to a patients vascular system. Vascular access allows the deployment of other surgical instruments and also the monitoring of many physiological parameters. Current methods to locate blood vessels are predominantly based on the landmark technique coupled with ultrasound, fluoroscopy, or Doppler. However, even with experience and technological assistance, locating the required blood vessel is not always an easy task, especially with patients that present atypical anatomy or suffer from conditions such as weak pulsation or obesity that make vascular localization difficult. With recent advances in fiber optic sensors, there is an opportunity to develop a new tool that can make vascular localization safer and easier. In this work, the authors present a new fiber Bragg grating (FBG) based vascular access device that specializes in arterial localization. The device estimates the location towards a local artery based on the bending of a needle inserted near the tissue surrounding the artery. Experimental results obtained from an artificial circulatory loop and a mock artery show the device works best for lower angles of needle insertion and can provide an approximately 40° range of estimation towards the location of a pulsating source (e.g. an artery).

  15. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  16. Photoanodic Hybrid Semiconductor–Molecular Heterojunction for Solar Water Oxidation

    KAUST Repository

    Joya, Khurram Saleem

    2015-06-29

    Inorganic photo-responsive semiconducting materials have been employed in photoelectrochemical(PEC) water oxidation devicesin pursuit of solar to fuel conversion.[1]The reaction kinetics in semiconductors is limited by poor contact at the interfaces, and charge transfer is impeded by surface defects and the grain boundaries.[2]It has shown that successful surface functionalization of the photo-responsive semiconducting materials with co-catalysts can maximize the charge separation, hole delivery and its effective consumption, and enhances the efficiency and performane of the PEC based water oxidation assembly.[3]We present here unique modification of photoanodic hematite (α-Fe2O3) and bismuth vanadate (BiVO4) with molecular co-catalysts for enhanced photoelectrochemical water oxidation (Figure 1). These hybrid inorganic–organometallic heterojunctions manifest impressive cathodic shifts in the onset potentials, and the photocurrent densities have been enhanced by > 90% at all potentials relative to uncatalyzed α-Fe2O3 or BiVO4, and other catalyst-semiconductor based heterojunctions.This is a novel development in the solar to fuel conversion field, and is crucially important for designing a tandem device where light interfere very little with the catalyst layer on top of semiconducting light absorber.

  17. In situ codoping of a CuO absorber layer with aluminum and titanium: the impact of codoping and interface engineering on the performance of a CuO-based heterojunction solar cell

    Science.gov (United States)

    Masudy-Panah, Saeid; Radhakrishnan, K.; Ru, Tan Hui; Yi, Ren; Wong, Ten It; Dalapati, Goutam Kumar

    2016-09-01

    Aluminum-doped cupric oxide (CuO:Al) was prepared via an out-diffusion process of Al from an Al-coated substrate into the deposited CuO thin film upon thermal treatment. The effect of the annealing temperature on the structural and optical properties of CuO:Al was investigated in detail. The influence of Al incorporation on the photovoltaic properties was then investigated by preparing a p-CuO:Al/n-Si heterojunction solar cell. A significant improvement in the performance of the solar cell was achieved by controlling the out-diffusion of Al. A novel in situ method to co-dope CuO with Al and titanium (Ti) has been proposed to demonstrate CuO-based solar cells with the front surface field (FSF) design. The FSF design was created by depositing a CuO:Al layer followed by a Ti-doped CuO (CuO:Ti) layer. This is the first successful experimental demonstration of the codoping of a CuO thin film and CuO thin film solar cells with the FSF design. The open circuit voltage (V oc), short circuit current density (J sc) and fill factor (FF) of the fabricated solar cells were significantly higher for the FSF device compared to devices without FSF. The FF of this device improved by 68% through the FSF design and a record efficiency ɳ of 2% was achieved. The improvement of the solar cell properties is mainly attributed to the reduction of surface recombination, which influences the charge carrier collection.

  18. Fullerene-grafted block copolymers used as compatibilizer in P3HT/PCBM bulk heterojunctions: morphology and photovoltaic performances

    OpenAIRE

    Gernigon, V.; LÉvÊque, P.; Brochon, C.; Audinot, J.-N.; Leclerc, N; Bechara, R.; Richard, F.; Heiser, T.; Hadziioannou, G.

    2011-01-01

    Abstract The nanostructure of the active layer in polymer/fullerene bulk heterojunction solar cells is known to have a strong impact on the device performances. Controlling the polymer/fullerene blend morphology is therefore particularly important. In this work, a rod-coil block copolymer, based on a regioregular poly(3-hexylthiophene) electron-donor rod block and a C60-grafted coil block, is used as compatibilizer and its influences on the thin film morphology as well as the photo...

  19. Diester Molecules for Organic-Based Electrical and Photoelectrical Devices

    Science.gov (United States)

    Topal, Giray; Tombak, Ahmet; Yigitalp, Esref; Batibay, Derya; Kilicoglu, Tahsin; Ocak, Yusuf Selim

    2017-07-01

    Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/ n-Si organic-inorganic (OI) heterojunction-type devices were fabricated, and the current-voltage ( I- V) characteristics of the devices have been investigated at room temperature. I- V characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log I- V plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log I- V plots. Thus, the modification of the Au/ n-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The I- V measurements were repeated to characterize the devices at 100 mW/cm2 illumination intensity with the help of a solar simulator with an AM1.5G filter.

  20. Fabrication and Characterization of Fullerene-Based Bulk Heterojunction Solar Cells with Porphyrin, CuInS2, Diamond and Exciton-Diffusion Blocking Layer

    Directory of Open Access Journals (Sweden)

    Takeo Oku

    2010-04-01

    Full Text Available Fullerene-based bulk heterojunction solar cells were fabricated, and the electronic and optical properties were investigated. C60 were used as n-type semiconductors, and porphyrin, CuInS2 and diamond were used as p-type semiconductors. An effect of exciton-diffusion blocking layer of perylene derivative on the solar cells between active layer and metal layer was also investigated. Optimized structures with the exciton-diffusion blocking layer improved conversion efficiencies. Electronic structures of the molecules were investigated by molecular orbital calculation, and energy levels of the solar cells were discussed. Nanostructures of the solar cells were investigated by transmission electron microscopy, electron diffraction and X-ray diffraction, which indicated formation of mixed nanocrystals.

  1. Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kai-Hsuan; Chen, Chia-Hao [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China); Chang, Ping-Chuan [Department of Electro-Optical Engineering, Kun Shan University, Dawan Rd. 949, 71003 Tainan, Taiwan (China); Chen, Tse-Pu; Chang, Sheng-Po; Chang, Shoou-Jinn [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, University Rd. 1, 70101 Tainan, Taiwan (China); Shiu, Hung-Wei; Chang, Lo-Yueh [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China); Department of Physics, National Tsing Hua University, Kuang-Fu Rd. 101, 30013 Hsinchu, Taiwan (China)

    2013-02-18

    Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

  2. Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Long, Hao; Ai, Lei [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Li, Songzhan [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan, Hubei 430073 (China); Huang, Huihui; Mo, Xiaoming; Wang, Haoning; Chen, Zhao; Liu, Yuping [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China); Fang, Guojia, E-mail: gjfang@whu.edu.cn [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072 (China)

    2014-05-01

    Highlights: • A p-NiO film/n-ZnO nanorod array heterojunction was prepared. • The heterojunction shows good morphology and crystal properties. • The diode exhibits excellent rectifying behavior. • The diode exhibits strong temperature dependent I–V properties. • The hybrid diode shows good photosensitivity under the ultraviolet irradiation. - Abstract: A p-NiO film/n-ZnO nanorod (NR) array heterojunction was prepared by deposition of NiO film on ZnO NRs using radio-frequency reactive magnetron sputtering. The well-aligned ZnO NRs were fabricated by a simple and economic hydrothermal method on a ZnO:Al-coated glass substrate. Good morphology and crystal properties of the fabricated ZnO NRs and NiO film were confirmed by scanning electron microscopy and X-ray diffraction. The p–n heterojunction exhibits excellent rectifying behaviour and strong temperature-dependent current–voltage properties in the range from −50 to 80 °C. The hybrid NR heterojunction diode shows good photosensitivity under the irradiation of 365 nm ultraviolet light. These results present potential applications in future microelectronic devices based on NiO films and the one-dimensional ZnO nanomaterials.

  3. Efficient phthalimide copolymer-based bulk heterojunction solar cells: how the processing additive influences nanoscale morphology and photovoltaic properties

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Hao; Ren, Guoqiang; Jenekhe, Samson A. [Department of Chemical Engineering and Department of Chemistry, University of Washington, Seattle (United States); Guo, Xugang; Watson, Mark D. [Department of Chemistry, University of Kentucky, Lexington (United States)

    2012-05-15

    The power conversion efficiency of poly(N-(2-ethylhexyl)-3,6-bis(4-dodecyloxythiophen-2-yl)phthalimide) (PhBTEH)/fullerene bulk heterojunction solar cells improves from 0.43 to 4.1% by using a processing additive. The underlying mechanism for the almost 10-fold enhancement in solar cell performance is found to be inhibition of fullerene intercalation into the polymer side chains and regulation of the relative crystallization/aggregation rates of the polymer and fullerene. An optimal interconnected two-phase morphology with 15-20 nm domains is obtained when a processing additive is used compared with 100-300 nm domains without the additive. The results demonstrate that a processing additive provides an effective means of controlling both the fullerene intercalation in polymer/fullerene blends and the domain sizes of their phase-separated nanoscale morphology. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  5. Using volatile additives to alter the morphology and performance of active layers in thin-film molecular photovoltaic devices incorporating bulk heterojunctions.

    Science.gov (United States)

    Dang, Minh Trung; Wuest, James D

    2013-12-07

    Thin-film photovoltaic devices composed of polymers or small molecules have an exciting future as sources of renewable energy because they can be made in large sizes on flexible surfaces by inexpensive techniques of fabrication. Significant progress in developing new molecular photovoltaic materials and device architectures has been achieved in the last decade. The identity of molecular components in active layers and their individual optoelectronic properties obviously help determine the properties of devices; in addition, however, the behavior of devices depends critically on the nature of the local organization of the components. Recent studies have shown that the morphology of active layers can be tuned by adjusting various parameters, including the solvent used to cast the layer, thermal annealing, and special processing additives. In this review, we summarize the effect of volatile additives on the nanoscale morphology of molecular blends, and we show how these effects can improve the performance of devices. Although we focus on the behavior of mixtures of the type used in current molecular thin-film photovoltaic devices, the subject of our review will interest researchers in all areas of science and technology requiring materials in which separate phases must form intimate long-lived intermixtures with defined structures.

  6. Effects of collector heterojunction displacement from its p n junction on the unilateral power gain at 10 GHz in SiGe HBTs

    Science.gov (United States)

    Roenker, K. P.; Sampathkumaran, R.; Breed, A.

    2004-09-01

    The design of SiGe heterojunction bipolar transistors for high frequency (10 GHz), high power applications has been investigated by numerical device modelling using a commercial simulator. For the SiGe base layer, boron outdiffusion can give rise to displacement of the base-collector p-n junction from the collector heterojunction, which contributes to the development of a parasitic barrier in the conduction band. In this paper, using a Gaussian distribution for the base's boron profile, we examine the effects of the device's epitaxial layer design on the device's unilateral power gain at 10 GHz and its relation to this barrier. Degradation in the device's microwave power gain was found to correlate with formation of the collector junction parasitic barrier, where the barrier height was found to depend upon the extent of the p-n junction displacement from the heterojunction, the Ge concentration in the base and the dc bias point. Trade-offs in device design to reduce its sensitivity to outdiffusion were examined including the use of undoped SiGe spacer layers, increased collector doping and the insertion of a thin, n+ layer at the collector junction.

  7. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    Science.gov (United States)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS-based

  8. Hybrid tandem solar cells with depleted-heterojunction quantum dot and polymer bulk heterojunction subcells

    KAUST Repository

    Kim, Taesoo

    2015-10-01

    We investigate hybrid tandem solar cells that rely on the combination of solution-processed depleted-heterojunction colloidal quantum dot (CQD) and bulk heterojunction polymer:fullerene subcells. The hybrid tandem solar cell is monolithically integrated and electrically connected in series with a suitable p-n recombination layer that includes metal oxides and a conjugated polyelectrolyte. We discuss the monolithic integration of the subcells, taking into account solvent interactions with underlayers and associated constraints on the tandem architecture, and show that an adequate device configuration consists of a low bandgap CQD bottom cell and a high bandgap polymer:fullerene top cell. Once we optimize the recombination layer and individual subcells, the hybrid tandem device reaches a VOC of 1.3V, approaching the sum of the individual subcell voltages. An impressive fill factor of 70% is achieved, further confirming that the subcells are efficiently connected via an appropriate recombination layer. © 2015.

  9. Dirac point induced ultralow-threshold laser and giant optoelectronic quantum oscillations in graphene-based heterojunctions.

    Science.gov (United States)

    Haider, Golam; Ravindranath, Rini; Chen, Tzu-Pei; Roy, Prathik; Roy, Pradip Kumar; Cai, Shu-Yi; Chang, Huan-Tsung; Chen, Yang-Fang

    2017-08-15

    The occurrence of zero effective mass of electrons at the vicinity of the Dirac point is expected to create new paradigms for scientific research and technological applications, but the related discoveries are rather limited. Here, we demonstrate that a simple architecture composed of graphene quantum dots sandwiched by graphene layers can exhibit several intriguing features, including the Dirac point induced ultralow-threshold laser, giant peak-to-valley ratio (PVR) with ultra-narrow spectra of negative differential resistance and quantum oscillations of current as well as light emission intensity. In particular, the threshold of only 12.4 nA cm-2 is the lowest value ever reported on electrically driven lasers, and the PVR value of more than 100 also sets the highest record compared with all available reports on graphene-based devices. We show that all these intriguing phenomena can be interpreted based on the unique band structures of graphene quantum dots and graphene as well as resonant quantum tunneling.In graphene, electrons possess zero effective mass in proximity to the Dirac point, an unusual feature that could trigger the development of novel photonic devices. Here, the authors combine graphene quantum dots with two graphene layers and observe laser action with ultralow threshold.

  10. Azobenzene compound-based photomechanical actuator devices

    Science.gov (United States)

    Ye, Xianjun; Kuzyk, Mark G.

    2012-10-01

    It has been shown that the chromophore disperse red 1 azobenzene (DR1) when doped into poly(methyl methacrylate) (PMMA) optical fiber can be used to make an optical cantilever in which an asymmetrically propagating beam at 633nm causes the fiber to bend. The fast response process is purported to be due to elongation of the material as molecules change between cis and trans isomers. In our work, UV light of 350nm will be used to investigate trans to cis somerization, which should induce contraction. Short fiber segments in a three-contactpoint geometry will be used to control the position and tilt of silver- or aluminum-coated coverslips that together with microscope glass slides as the substrate make optically-actuated beam-controlling mounts and Fabry-Perot interferometers. A Michelson interferometer is used to measure the length change of the fiber actuator. Azodye doped liquid crystal (LC) elastomers have been demonstrated to have a photomechanical effect that is at least ten times bigger than thermoplastic-based polymer fiber. However, the optical quality of thermoplastics are much better, enabling the cascading of devices in series. We will report on visible and UV laser-actuation of LC elastomer and polymer device structures using a quadrant photodetector to record the beam deflection caused by the shape change of the material, which will allow for dynamical measurements of the mechanisms. All measurements will be calibrated against a piezoelectric crystal actuator. Photomechanical devices provide an inexpensive but versatile, small-form factor, vibration free and high precision solution to optomechanics, sensing, positioning and other space applications.

  11. Correlation of morphology, cell architecture and device performance in P3HT/fullerene based organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hoermann, Ulrich; Wagner, Julia; Opitz, Andreas; Bruetting, Wolfgang [Institute of Physics, University of Augsburg (Germany); Moons, Ellen [Department of Physics, Karlstad University (Sweden)

    2010-07-01

    The material combination of the polymer poly(3-hexylthiophene) (P3HT) and the fullerene derivative[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) is one of the most widespread donor-acceptor systems in organic photovoltaics. In the present work these materials as well as the buckminsterfullerene C{sub 60} are studied in three different device architectures: the bulk heterojunction, the planar heterojunction and the diffuse heterojunction, which can be considered as a combination of both. Planar heterojunctions are achieved by evaporation of either C{sub 60} or PCBM onto a spin-coated P3HT layer. Heating the P3HT film to an appropriate temperature during the evaporation process enables the C{sub 60} molecules to penetrate into the polymer layer, representing a new technique of producing diffuse donor-acceptor interfaces. Preparation of diffuse heterojunctions with PCBM can be achieved by means of spin coating while partly dissolving the underlying P3HT. Morphological investigations of the resulting layers have been performed by scanning force microscopy as well as optical and fluorescence microscopy and emphasize the importance of morphology and device architecture for the performance of organic photovoltaic cells.

  12. A novel fabrication of MEH-PPV/Al:ZnO nanorod arrays based ordered bulk heterojunction hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Sahdan, M.Z.; Mamat, M.H.; Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z.; Husairi, S.S. [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA -UiTM, 40450 Shah Alam, Selangor (Malaysia); Md Sin, N.D. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2013-06-15

    Vertically aligned Al:ZnO nanorod arrays has been used as window layer in the fabrication of ordered bulk heterojuction hybrid solar cells. The utilization of the nanorod arrays will enhance the electron transport in vertical direction and also for light harvesting applications for high performance devices. The performance of this hybrid polymer/metal oxide photovoltaic devices based on MEH-PPV [poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene)] and oriented Al:ZnO nanorod arrays is studied. The Al:ZnO nanorod arrays with a diameter of about 70–80 nm and thickness of approximately 500 nm were successfully grown on Al:ZnO-coated ITO substrate by sonicated sol–gel immersion technique. The photovoltaic performance of a short-circuit current density of 5.320 mA/cm{sup 2}, an open-circuit voltage of 195 mV and a fill factor of 27.71%, with a power conversion efficiency of about 0.287% under AM 1.5 illumination (100 mW/cm{sup 2}). To the best of our knowledge, preparation of aligned Al:ZnO nanorod arrays for this type of solar cell fabrication has not been reported by any research group.

  13. Ag-Incorporated Organic-Inorganic Perovskite Films and Planar Heterojunction Solar Cells.

    Science.gov (United States)

    Chen, Qi; Chen, Lei; Ye, Fengye; Zhao, Ting; Tang, Feng; Rajagopal, Adharsh; Jiang, Zheng; Jiang, Shenlong; Jen, Alex K-Y; Xie, Yi; Cai, Jinhua; Chen, Liwei

    2017-05-10

    Controlled doping for adjustable material polarity and charge carrier concentration is the basis of semiconductor materials and devices, and it is much more difficult to achieve in ionic semiconductors (e.g., ZnO and GaN) than in covalent semiconductors (e.g., Si and Ge), due to the high intrinsic defect density in ionic semiconductors. The organic-inorganic perovskite material, which is frenetically being researched for applications in solar cells and beyond, is also an ionic semiconductor. Here we present the Ag-incorporated organic-inorganic perovskite films and planar heterojunction solar cells. Partial substitution of Pb2+ by Ag+ leads to improved film morphology, crystallinity, and carrier dynamics as well as shifted Fermi level and reduced electron concentration. Consequently, in planar heterojunction photovoltaic devices with inverted stacking structure, Ag incorporation results in an enhancement of the power conversion efficiency from 16.0% to 18.4% in MAPbI3 based devices and from 11.2% to 15.4% in MAPbI3-xClx based devices. Our work implies that Ag incorporation is a feasible route to adjust carrier concentrations in solution-processed perovskite materials in spite of the high concentration of intrinsic defects.

  14. Medical devices regulatory aspects: a special focus on polymeric material based devices.

    Science.gov (United States)

    Sridhar, Radhakrishnan; Pliszka, Damian; Luo, He-Kuan; Chin Lim, Keith Hsiu; Ramakrishna, Seeram

    2015-01-01

    Medical devices form a broad range of appliances from a basic nanoparticle coating or surgical gloves to a complicated laser therapy device. These devices are designed to support patients, surgeons and healthcare personnel in meeting patients' healthcare needs. Regulatory authorities of each country regulate the process of approval, manufacturing and sales of these medical devices so as to ensure safety and quality to patients or users. Recent recalls of medical devices has increased importance of safety, awareness and regulation of the devices. Singapore and India have strong presence and national priorities in medical devices development and use. Herein we capture the rationale of each of these national regulatory bodies and compare them with the medical devices regulatory practices of USA and European nations. Apart from the comparison of various regulatory aspects, this review will specifically throw light on the polymer material based medical devices and their safety.

  15. Picosecond excited state spectroscopy of organic bulk heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Gieseking, Bjoern; Jaeck, Berthold; Deibel, Carsten [Experimental Physics VI, Faculty of Physics and Astronomy, Julius- Maximilians-University Wuerzburg, D-97074 Wuerzburg (Germany); Dyakonov, Vladimir [Experimental Physics VI, Faculty of Physics and Astronomy, Julius- Maximilians-University Wuerzburg, D-97074 Wuerzburg (Germany); Bavarian Centre for Applied Energy Research (ZAE Bayern), D-97074 Wuerzburg (Germany)

    2011-07-01

    Bulk heterojunction solar cells comprised of conjugated polymers and fullerene derivatives approach efficiencies of 8 % making this composite system a promising candidate for the application in organic photovoltaics. Different approaches for improving the device performance aim at the physical properties of the material system itself, but a further optimization requires a deeper insight into the elementary processes following the photoexcitation of these blends. Here we present recent time-resolved spectroscopic studies on the conjugated Polymer P3HT blended with different fullerene derivatives employing femtosecond transient absorption (TA) and photoluminescence (PL) spectroscopy. For both methods we use an Ti:sapphire-based femtosecond laser system together with two optical parametric amplifiers and a streak camera providing a time resolution in the sub picosecond (TA) and picosecond (PL) regime, respectively. Applying these techniques we studied the recombination dynamics of singlet excitons and polarons after photoexcitation. We discuss our results in terms of performance optimisation of organic solar cells.

  16. Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Midili, Virginio; Squartecchia, Michele

    2017-01-01

    A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based...

  17. Vertical MoSe2-MoOxp-n heterojunction and its application in optoelectronics.

    Science.gov (United States)

    Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

    2018-01-26

    The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe 2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO 2 /Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ∼8 μm. Vertical MoSe 2 -MoO x p-n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe 2 -MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W -1 , 0.85 × 10 8 Jones, and 1665.6%, respectively, at V ds  = 5 V with the light wavelength of 254 nm under 0.29 mW cm -2 . These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

  18. Magnesium-doped zinc oxide nanorod-nanotube semiconductor/p-silicon heterojunction diodes

    Science.gov (United States)

    Caglar, Yasemin; Görgün, Kamuran; Ilican, Saliha; Caglar, Mujdat; Yakuphanoğlu, Fahrettin

    2016-08-01

    Nanostructured zinc oxide material is usable in electronic device applications such as light-emitting diodes, heterojunction diode, sensors, solar cell due to its interesting electrical conductivity and optical properties. Magnesium-doped zinc oxide nanorod (NR)-nanotube (NT) films were grown by microwave-assisted chemical bath deposition to fabricate ZnO-based heterojunction diode. It is found that ZnO hexagonal nanorods turn into hexagonal nanotubes when the Mg doping ratio is increased from 1 to 10 %. The values of the optical band gap for 1 % Mg-doped ZnO NR and 10 % Mg-doped ZnO NT films are found to be 3.14 and 3.22 eV, respectively. The n-ZnO:Mg/p-Si heterojunction diodes were fabricated. The diodes exhibited a rectification behavior with ideality factor higher than unity due to the presence of surface states in the junction and series resistance. The obtained results indicate that Mg doping improves the electrical and optical properties of ZnO.

  19. Electrostatic fields in hybrid heterojunctions: Field-effect transistor, topological insulator, & thermoelectronic application

    Science.gov (United States)

    Ireland, Robert Matthew

    Organic semiconductors (OSC) are still surging in popularity for sustainable electronic devices, especially since they can perform as well as amorphous and polycrystalline silicon materials. Although OSCs have processing advantages that give rise to novel opportunities compared to inorganic semiconductors (ISCs), devices usually require inorganic materials for highly conductive connections or other functionality. Significantly, OSCs can be used to tune or modify the behavior of inorganic semiconductors (ISCs) by exploiting the junction between two semiconductors (a heterojunction). The possible creation of stable interfaces between ISCs and OSCs provides a practically limitless range of functionalities. Broadly, my goal is to study interfaces between OSCs and ISCs (hybrid heterojunctions) by testing devices of different configurations and altering the internal fields systematically, as well as with the aid of electron- and force-microscopy, and photoelectron spectroscopy. This thesis contains three major sections based around nascent, relevant applications: field-effect transistors, topological insulators, and thermoelectrics. First I study the effects of combining tellurium thin-films with OSC layers in field-effect transistors, where the organic acts both as a substrate modification layer and electrostatic gate. Secondly, I use electron withdrawing OSCs as gating materials for modifying Bi2Se3 in order to realize fundamental topological insulator behavior. Thirdly, I develop polymer-particle composites, including doping of the polymers and stabilization of inorganic particles with an electronic density of states that supports good thermoelectric behavior. We show that OSCs can undeniably be used to significantly modify properties of ISCs, namely tellurium, bismuth selenide, and organometallic compounds. I will first discuss the interfacial fields intrinsic to each heterojunction or device structure. Then I implement an additional electrostatic gate as part of the

  20. Tin Compensation for the SnS Based Optoelectronic Devices.

    Science.gov (United States)

    Wang, S F; Wang, W; Fong, W K; Yu, Y; Surya, C

    2017-01-03

    In this paper we report the growth of high quality SnS thin films with good crystallinity deposited on two-dimensional (2D) mica substrates. It is believed that the 2D nature of SnS, with strong intra-layer covalent bonds and weak inter-layer van der Waals interactions, is responsible for its relative insensitivity to lattice mismatch. We also investigated the reduction of Sn vacancies in the material using Sn-compensation technique during the material growth process. The experimental results clearly demonstrated substantial enhancements in the electrical and structural properties for films deposited using Sn-compensation technique. A mobility of 51 cm(2)  V(-1) s(-1) and an XRD rocking curve full width at half maximum of 0.07° were obtained. Sn-compensated SnS/GaN:Si heterojunctions were fabricated and significant improvement in both the I-V characteristics and the spectral responsivities of the devices were characterized.

  1. Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

    KAUST Repository

    Debnath, Ratan

    2010-01-01

    With an aim to reduce the cost of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces costly Au with a low-cost Ni-based Ohmic contact. The resultant devices achieve 3.5% Air Mass 1.5 power conversion efficiency. Only by incorporating a 1.2-nm-thick LiF layer between the PbS quantum dot film and Ni, we were able to prevent undesired reactions and degradation at the metal-semiconductor interface. © 2010 American Institute of Physics.

  2. Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

    Science.gov (United States)

    Ameen, Tarek A.; Ilatikhameneh, Hesameddin; Huang, Jun Z.; Povolotskyi, Michael; Rahman, Rajib; Klimeck, Gerhard

    2017-06-01

    Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numerical modeling of such effects requires combining the non-equilibrium coherent quantum transport through tunnel junction, as well as the quasi-equilibrium statistics arising from the strong scattering in the induced quantum wells. In this work, a novel atomistic model is proposed to include both effects: the strong scattering in the regions around THJ and the coherent tunneling. The new model matches reasonably well with experimental measurements of Nitride THJ and provides an efficient engineering tool for performance prediction and design of THJ based devices.

  3. Probability density of tunneled carrier states near heterojunctions calculated numerically by the scattering method.

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Myers, Samuel M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-09-01

    The energy-dependent probability density of tunneled carrier states for arbitrarily specified longitudinal potential-energy profiles in planar bipolar devices is numerically computed using the scattering method. Results agree accurately with a previous treatment based on solution of the localized eigenvalue problem, where computation times are much greater. These developments enable quantitative treatment of tunneling-assisted recombination in irradiated heterojunction bipolar transistors, where band offsets may enhance the tunneling effect by orders of magnitude. The calculations also reveal the density of non-tunneled carrier states in spatially varying potentials, and thereby test the common approximation of uniform- bulk values for such densities.

  4. Magnetic skyrmion-based artificial neuron device

    Science.gov (United States)

    Li, Sai; Kang, Wang; Huang, Yangqi; Zhang, Xichao; Zhou, Yan; Zhao, Weisheng

    2017-08-01

    Neuromorphic computing, inspired by the biological nervous system, has attracted considerable attention. Intensive research has been conducted in this field for developing artificial synapses and neurons, attempting to mimic the behaviors of biological synapses and neurons, which are two basic elements of a human brain. Recently, magnetic skyrmions have been investigated as promising candidates in neuromorphic computing design owing to their topologically protected particle-like behaviors, nanoscale size and low driving current density. In one of our previous studies, a skyrmion-based artificial synapse was proposed, with which both short-term plasticity and long-term potentiation functions have been demonstrated. In this work, we further report on a skyrmion-based artificial neuron by exploiting the tunable current-driven skyrmion motion dynamics, mimicking the leaky-integrate-fire function of a biological neuron. With a simple single-device implementation, this proposed artificial neuron may enable us to build a dense and energy-efficient spiking neuromorphic computing system.

  5. Magnetic skyrmion-based artificial neuron device.

    Science.gov (United States)

    Li, Sai; Kang, Wang; Huang, Yangqi; Zhang, Xichao; Zhou, Yan; Zhao, Weisheng

    2017-08-04

    Neuromorphic computing, inspired by the biological nervous system, has attracted considerable attention. Intensive research has been conducted in this field for developing artificial synapses and neurons, attempting to mimic the behaviors of biological synapses and neurons, which are two basic elements of a human brain. Recently, magnetic skyrmions have been investigated as promising candidates in neuromorphic computing design owing to their topologically protected particle-like behaviors, nanoscale size and low driving current density. In one of our previous studies, a skyrmion-based artificial synapse was proposed, with which both short-term plasticity and long-term potentiation functions have been demonstrated. In this work, we further report on a skyrmion-based artificial neuron by exploiting the tunable current-driven skyrmion motion dynamics, mimicking the leaky-integrate-fire function of a biological neuron. With a simple single-device implementation, this proposed artificial neuron may enable us to build a dense and energy-efficient spiking neuromorphic computing system.

  6. Hybrid thin films based on bilayer heterojunction of titania nanocrystals/polypyrrole/natural dyes (Kappaphycus alvarezii) materials

    Science.gov (United States)

    Ghazali, Salmah Mohd; Salleh, Hasiah; Dagang, Ahmad Nazri; Ghazali, Mohd Sabri Mohd; Ali, Nik Aziz Nik; Rashid, Norlaily Abdul; Kamarulzaman, Nurul Huda; Ahmad, Wan Almaz Dhafina Che Wan

    2017-09-01

    In this research, hybrid thin films which consist of a combination of organic red seaweed (RS) (Kappaphycus alvarezii) and polypyrrole (PPy) with inorganic titania nanocrystals (TiO2 NCs) materials were fabricated. These hybrid thin films were fabricated accordingly with bilayer heterojunction of ITO/TiO2 NCs/PPy/RS via electrochemical method using Electrochemical Impedance Spectroscopy (EIS). The effect of number of scans (thickness) of titania on optical and electrical properties of hybrid thin films were studied. TiO2 NCs function as an electron acceptor and electronic conductor. Meanwhile, PPy acts as holes conductor and RS dye acts as a photosensitizer enhances the optical and electrical properties of the thin films. The UV absorption spectrum of TiO2 NCs, PPy and RS are characterized by UV-Visible spectroscopy, while the functional group of RS was characterized by Fourier transform infrared spectroscopy (FTIR). The UV-Vis spectra showed that TiO2 NCs, PPy and RS were absorbed over a wide range of light spectrum which were 200-300 nm, 300-900 nm and 250-900 nm; respectively. The FTIR spectra of the RS showed the presence of hydroxyl group which was responsible for a good sensitizer for these hybrid solar cells. The electrical conductivity of these hybrid thin films were measured by using four point probes. The electrical conductivity of ITO/ (1)TiO2 NCs/PPy/RS thin film under the radiation of 100 Wm-2 was 0.062 Scm-1, hence this hybrid thin films can be applied in solar cell application.

  7. {100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  8. Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment

    Directory of Open Access Journals (Sweden)

    Shih-Wei Tan

    2012-01-01

    Full Text Available A thermal treatment was employed to improve the DC performances of npn graded-base AlGaN/GaN heterojunction bipolar transistors (HBTs. Such HBTs without the thermal treatment exhibit a higher turn-on voltage of 6.45 V, a lower current gain of 0.84, and a lower collector current of 3.18 × 10−4 mA at of 4.5 V. The HBTs are examined by thermal treatment with rapid thermal process (RTP annealing at various times and various temperatures. Experimental results reveal that the HBTs with the thermal treatment exhibit a lowest turn-on voltage of 3.90 V, a highest current gain of 9.55, and highest collector current of 112.2 mA at of 4.5 V. The thermal treatment brings forth the most remarkable improvements for the HBTs when the base parasitical Schottky diodes are modified.

  9. Field emission analysis of band bending in donor/acceptor heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Xing, Yingjie, E-mail: xingyj@pku.edu.cn; Li, Shuai; Wang, Guiwei; Zhao, Tianjiao; Zhang, Gengmin [Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China)

    2016-06-28

    The donor/acceptor heterojunction plays an important role in organic solar cells. An investigation of band bending in the donor/acceptor heterojunction is helpful in analysis of the charge transport behavior and for the improvement of the device performance. In this work, we report an approach for detection of band bending in a donor/acceptor heterojunction that has been prepared on a small and sharp tungsten tip. In situ field emission measurements are performed after the deposition process, and a linear Fowler-Nordheim plot is obtained from the fresh organic film surface. The thickness-dependent work function is then measured in the layer-by-layer deposited heterojunction. Several different types of heterojunction (zinc phthalocyanine (ZnPc)/C60, copper phthalocyanine (CuPc)/3,4,9,10-perylenetetracarboxylic bisbenzimidazole, and CuPc/C60) are fabricated and analyzed. The different charge transfer directions in the heterojunctions are distinguished by field emission measurements. The calculation method used to determine the band bending is then discussed in detail. A triple layer heterojunction (C60/ZnPc/CuPc) is also analyzed using this method. A small amount of band bending is measured in the outer CuPc layer. This method provides an independent reference method for determination of the band bending in an organic heterojunction that will complement photoemission spectroscopy and current-voltage measurement methods.

  10. Mobility-limited polyarylamine biscarbonate ester (PABC) /[6,6]-phenyl $C_{61}$ butyric acid methyl ester (PCBM) bulk heterojunction photovoltaic device

    CERN Document Server

    Lin, Liang-Bih; Preske, Amanda E; Mamiya, Arthur A; Filho, Demétrio A da Silva; Cardoso, George C

    2016-01-01

    Photovoltaic (PV) devices made from blends of a polyarylamine biscarbonate ester (PABC) and [6,6]-phenyl $C_{61}$ butyric acid methyl ester (PCBM) have been fabricated and characterized. PABC is a hole transporting co-polymer prepared from reacting N,N'diphenyl-N,N'bis(3-hydroxyphenyl)1,1;biphenyl(4,4'diamine), diethylene glycol bischloroformate, and triethylemine. By varying the polymer loading in the blend, optimal power conversion efficiency (PCE) of approximately 0.45\\% has been achieved for a blend consisting of 25 wt\\% PABC, which is an order of magnitude higher than the PCE for a 45 wt\\% blend. The optimal ratio is at about 0.44:0.56 molar ratio of the active hole transporting to electron transporting moieties. Results of mobility studies suggest that blends with higher PABC loading have efficiencies limited by 'hole' transport. Also responsible for the lower efficiency at higher PABC concentrations was optical filtering. The efficiency does not appear to be limited by deep charge trapping. Density fun...

  11. The Physics of Small Molecule Acceptors for Efficient and Stable Bulk Heterojunction Solar Cells

    KAUST Repository

    Gasparini, Nicola

    2018-01-29

    Organic bulk heterojunction solar cells based on small molecule acceptors have recently seen a rapid rise in the power conversion efficiency with values exceeding 13%. This impressive achievement has been obtained by simultaneous reduction of voltage and charge recombination losses within this class of materials as compared to fullerene-based solar cells. In this contribution, the authors review the current understanding of the relevant photophysical processes in highly efficient nonfullerene acceptor (NFA) small molecules. Charge generation, recombination, and charge transport is discussed in comparison to fullerene-based composites. Finally, the authors review the superior light and thermal stability of nonfullerene small molecule acceptor based solar cells, and highlight the importance of NFA-based composites that enable devices without early performance loss, thus resembling so-called burn-in free devices.

  12. Cosmetic devices based on active transdermal technologies.

    Science.gov (United States)

    Scott, Jessica A; Banga, Ajay K

    2015-01-01

    Active transdermal technology, commonly associated with drug delivery, has been used in recent years by the cosmetic industry for the aesthetic restoration of skin and delivery of cosmetic agents. In this article, we provide an overview of the skin's structure, various skin types, skin's self-repair mechanisms that are stimulated from the usage of cosmetic devices and discuss cosmetic applications. Summaries of the most common active transdermal technologies such as microneedles, iontophoresis, sonophoresis, lasers and microdermabrasion will be provided, in relation to the marketed cosmetic devices available that incorporate these technologies. Lastly, we cover combinations of active technologies that allow for more enhanced cosmetic results, and the current limitations of cosmetic devices.

  13. Antimony Based III-V Thermophotovoltaic Devices

    Energy Technology Data Exchange (ETDEWEB)

    CA Wang

    2004-06-09

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

  14. Electronic Transport Parameter of Carbon Nanotube Metal-Semiconductor On-Tube Heterojunction

    Directory of Open Access Journals (Sweden)

    Sukirno

    2009-03-01

    Full Text Available Carbon Nanotubes research is one of the top five hot research topics in physics since 2006 because of its unique properties and functionalities, which leads to wide-range applications. One of the most interesting potential applications is in term of nanoelectronic device. It has been modeled carbon nanotubes heterojunction, which was built from two different carbon nanotubes, that one is metallic and the other one is semiconducting. There are two different carbon nanotubes metal-semiconductor heterojunction. The first one is built from CNT(10,10 as metallic carbon nanotube and CNT (17,0 as semiconductor carbon nanotube. The other one is built from CNT (5,5 as metallic carbon nanotube and CNT (8,0. All of the semiconducting carbon nanotubes are assumed to be a pyridine-like N-doped. Those two heterojunctions are different in term of their structural shape and diameter. It has been calculated their charge distribution and potential profile, which would be useful for the simulation of their electronic transport properties. The calculations are performed by using self-consistent method to solve Non-Homogeneous Poisson’s Equation with aid of Universal Density of States calculation method for Carbon Nanotubes. The calculations are done by varying the doping fraction of the semiconductor carbon nanotubes The electron tunneling transmission coefficient, for low energy region, also has been calculated by using Wentzel-Kramer-Brillouin (WKB approximation. From the calculation results, it is obtained that the charge distribution as well as the potential profile of this device is doping fraction dependent. It is also inferred that the WKB method is fail to be used to calculate whole of the electron tunneling coefficient in this system. It is expected that further calculation for electron tunneling coefficient in higher energy region as well as current-voltage characteristic of this system will become an interesting issue for this carbon nanotube based

  15. Toward biomaterial-based implantable photonic devices

    Science.gov (United States)

    Humar, Matjaž; Kwok, Sheldon J. J.; Choi, Myunghwan; Yetisen, Ali K.; Cho, Sangyeon; Yun, Seok-Hyun

    2017-03-01

    Optical technologies are essential for the rapid and efficient delivery of health care to patients. Efforts have begun to implement these technologies in miniature devices that are implantable in patients for continuous or chronic uses. In this review, we discuss guidelines for biomaterials suitable for use in vivo. Basic optical functions such as focusing, reflection, and diffraction have been realized with biopolymers. Biocompatible optical fibers can deliver sensing or therapeutic-inducing light into tissues and enable optical communications with implanted photonic devices. Wirelessly powered, light-emitting diodes (LEDs) and miniature lasers made of biocompatible materials may offer new approaches in optical sensing and therapy. Advances in biotechnologies, such as optogenetics, enable more sophisticated photonic devices with a high level of integration with neurological or physiological circuits. With further innovations and translational development, implantable photonic devices offer a pathway to improve health monitoring, diagnostics, and light-activated therapies.

  16. Integrating Sphere-based Weathering Device

    Data.gov (United States)

    Federal Laboratory Consortium — Description:In the artificial ultraviolet (UV) weathering of materials, a need exists for weathering devices that can uniformly illuminate test specimens with a high...

  17. Synaptic devices based on purely electronic memristors

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Ruobing [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Institute of Materials Science, School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Li, Jun; Zhuge, Fei, E-mail: zhugefei@nimte.ac.cn, E-mail: h-cao@nimte.ac.cn; Zhu, Liqiang; Liang, Lingyan; Zhang, Hongliang; Gao, Junhua; Cao, Hongtao, E-mail: zhugefei@nimte.ac.cn, E-mail: h-cao@nimte.ac.cn; Fu, Bing; Li, Kang [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2016-01-04

    Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.

  18. Fabrication and electrical properties of LiNbO3/ZnO/n-Si heterojunction

    Directory of Open Access Journals (Sweden)

    Lanzhong Hao

    2013-04-01

    Full Text Available Lithium niobate (LiNbO3 or LN ferroelectric films were grown on n-type Si (100 substrates using ZnO as buffer layers by pulse laser deposition technique. The microstructures and electrical properties of the heterojunctions were studied. X-ray diffraction results showed that single (001 orientation for the LN films can be promoted on Si (100 substrates with the buffer effect of the ZnO layers. Due to the ferroelectric polarizations of the LN films, hysteretic characteristics were observed from the capacitance-voltage (C-V curves of the LN/ZnO/n-Si heterojunctions. Obvious photoresponse characteristics were exhibited in the fabricated heterojunction. High performance of the photoresponse of the heterojunction was shown, such as a large ON/OFF ratio, short photoresponse time, steady ON or OFF states, and well reversible. These characteristics make it possible for the heterojunctions to develop multifunctional applications, such as memory devices, eletro-optic devices, and etc. The studied results show that the electrical properties of the heterojunctions were dependent greatly on the thickness of the ZnO buffers and the structural composition of the LN films. The results were discussed in terms of the band diagrams of the LN/ZnO/Si heterojunctions in this work.

  19. Toward flexible polymer and paper-based energy storage devices.

    Science.gov (United States)

    Nyholm, Leif; Nyström, Gustav; Mihranyan, Albert; Strømme, Maria

    2011-09-01

    All-polymer and paper-based energy storage devices have significant inherent advantages in comparison with many currently employed batteries and supercapacitors regarding environmental friendliness, flexibility, cost and versatility. The research within this field is currently undergoing an exciting development as new polymers, composites and paper-based devices are being developed. In this report, we review recent progress concerning the development of flexible energy storage devices based on electronically conducting polymers and cellulose containing composites with particular emphasis on paper-based batteries and supercapacitors. We discuss recent progress in the development of the most commonly used electronically conducting polymers used in flexible device prototypes, the advantages and disadvantages of this type of energy storage devices, as well as the two main approaches used in the manufacturing of paper-based charge storage devices. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays

    Directory of Open Access Journals (Sweden)

    Švrček Vladimir

    2009-01-01

    Full Text Available Abstract A silicon nanocrystals (Si-ncs conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene (P3HT polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic interaction between the polymer and surfactant-free Si-ncs is achieved. Temperature-dependent photoluminescence and transport properties were studied and the ratio between the photo- and dark-conductivity of 1.7 was achieved at ambient conditions. Furthermore the porous titanium dioxide (TiO2 nanotubes’ template was used for vertical order of photosensitive Si-ncs/P3HT-based blend. The anodization of titanium foil in ethylene glycol-based electrolyte containing fluoride ions and subsequent thermal annealing were used to prepare anatase TiO2nanotube arrays. The arrays with nanotube inner diameter of 90 and 50 nm were used for vertical ordering of the Si-ncs/P3HT bulk-heterojunction.

  1. In situ current voltage measurements for optimization of a novel fullerene acceptor in bulk heterojunction photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Shuttle, Christopher G. [Univ. of California, Santa Barbara, CA (United States). Dept.of Materials; Treat, Neil D. [Univ. of California, Santa Barbara, CA (United States). Dept.of Materials and Materials Research Lab.; Fan, Jian [Univ. of California, Santa Barbara, CA (United States). Depts. of Chemistry and Biochemistry; Varotto, Alessandro [Univ. of California, Santa Barbara, CA (United States). Depts. of Chemistry and Biochemistry; Hawker, Craig J. [Univ. of California, Santa Barbara, CA (United States). Depts. of Materials, Chemistry, Biochemistry and the Materials Research Lab.; Wudl, Fred [Univ. of California, Santa Barbara, CA (United States). Materials Research Lab. and Depts. of Chemistry and Biochemistry; Chabinyc, Michael L. [Univ. of California, Santa Barbara, CA (United States). Dept.of Materials and Materials Research Lab.

    2011-10-31

    The evaluation of the power conversion efficiency (PCE) of new materials for organic bulk heterojunction (BHJ) photovoltaics is difficult due to the large number of processing parameters possible. An efficient procedure to determine the optimum conditions for thermal treatment of polymer-based bulk heterojunction photovoltaic devices using in situ current-voltage measurements is presented. The performance of a new fullerene derivative, 1,9-dihydro-64,65-dihexyloxy-1,9-(methano[1,2] benzomethano)fullerene[60], in BHJ photovolatics with poly(3-hexylthiophene) (P3HT) was evaluated using this methodology. The device characteristics of BHJs obtained from the in situ method were found to be in good agreement with those from BHJs annealed using a conventional process. This fullerene has similar performance to 1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methano fullerene in BHJs with P3HT after thermal annealing. For devices with thickness of 70 nm, the short circuit current was 6.24 mA/cm² with a fill factor of 0.53 and open circuit voltage of 0.65 V. The changes in the current-voltage measurements during thermal annealing suggest that the ordering process in P3HT dominates the improvement in power conversion efficiency.

  2. Spin seebeck effect and thermal colossal magnetoresistance in graphene nanoribbon heterojunction.

    Science.gov (United States)

    Ni, Yun; Yao, Kailun; Fu, Huahua; Gao, Guoying; Zhu, Sicong; Wang, Shuling

    2013-01-01

    Spin caloritronics devices are very important for future development of low-power-consumption technology. We propose a new spin caloritronics device based on zigzag graphene nanoribbon (ZGNR), which is a heterojunction consisting of single-hydrogen-terminated ZGNR (ZGNR-H) and double-hydrogen-terminated ZGNR (ZGNR-H2). We predict that spin-up and spin-down currents flowing in opposite directions can be induced by temperature difference instead of external electrical bias. The thermal spin-up current is considerably large and greatly improved compared with previous work in graphene. Moreover, the thermal colossal magnetoresistance is obtained in our research, which could be used to fabricate highly-efficient spin caloritronics MR devices.

  3. Performance evaluation of cellular phone network based portable ECG device.

    Science.gov (United States)

    Hong, Joo-Hyun; Cha, Eun-Jong; Lee, Tae-Soo

    2008-01-01

    In this study, cellular phone network based portable ECG device was developed and three experiments were performed to evaluate the accuracy, reliability and operability, applicability during daily life of the developed device. First, ECG signals were measured using the developed device and Biopac device (reference device) during sitting and marking time and compared to verify the accuracy of R-R intervals. Second, the reliable data transmission to remote server was verified on two types of simulated emergency event using patient simulator. Third, during daily life with five types of motion, accuracy of data transmission to remote server was verified on two types of event occurring. By acquiring and comparing subject's biomedical signal and motion signal, the accuracy, reliability and operability, applicability during daily life of the developed device were verified. Therefore, cellular phone network based portable ECG device can monitor patient with inobtrusive manner.

  4. Ultraviolet photodetector with high internal gain enhanced by TiO₂/SrTiO₃ heterojunction.

    Science.gov (United States)

    Zhang, Min; Zhang, Haifeng; Lv, Kaibo; Chen, Weiyou; Zhou, Jingran; Shen, Liang; Ruan, Shengping

    2012-03-12

    In this letter, TiO₂ nanocrystalline film was prepared on SrTiO₃ (001) substrate to form an n-n heterojunction active layer. Interdigitated Au electrodes were deposited on the top of TiO₂ film to fabricate modified HMSM (heterojunction metal-semiconductor-metal) ultraviolet photodetector. At 10 V bias, the dark current of the detector was only 0.2 nA and the responsivity was 46.1 A/W at 260 nm. The rise and fall times of the device were 3.5 ms and 1.4 s, respectively. The TiO₂/SrTiO₃ heterojunction contributed a lot to the high responsivity and reduced the fall time, which improved the device performance effectively. These results demonstrate the excellent application of TiO₂/SrTiO₃ heterojunction in fabricating high performance UV photodetectors.

  5. Model-based engineering for medical-device software.

    Science.gov (United States)

    Ray, Arnab; Jetley, Raoul; Jones, Paul L; Zhang, Yi

    2010-01-01

    This paper demonstrates the benefits of adopting model-based design techniques for engineering medical device software. By using a patient-controlled analgesic (PCA) infusion pump as a candidate medical device, the authors show how using models to capture design information allows for i) fast and efficient construction of executable device prototypes ii) creation of a standard, reusable baseline software architecture for a particular device family, iii) formal verification of the design against safety requirements, and iv) creation of a safety framework that reduces verification costs for future versions of the device software. 1.

  6. Animation Based Learning of Electronic Devices

    Science.gov (United States)

    Gero, Aharon; Zoabi, Wishah; Sabag, Nissim

    2014-01-01

    Two-year college teachers face great difficulty when they teach the principle of operation of the bipolar junction transistor--a subject which forms the basis for electronics studies. The difficulty arises from both the complexity of the device and by the lack of adequate scientific background among the students. We, therefore, developed a unique…

  7. Conducting polymer based biomolecular electronic devices

    Indian Academy of Sciences (India)

    Our group has been actively working towards the application of conducting polymers to Schottky diodes, metal–insulator–semiconductor (MIS) devices and biosensors for the past 10 years. This paper is a review of some of the results obtained at our laboratory in the area of conducting polymer biomolecular electronics.

  8. Conducting polymer based biomolecular electronic devices

    Indian Academy of Sciences (India)

    Our group has been actively working towards the application of conducting polymers to Schottky diodes, metal– insulator–semiconductor (MIS) devices and biosensors for the past 10 years. This paper is a review of some of the results obtained at our laboratory in the area of conducting polymer biomolecular electronics.

  9. Interfacial Characteristics of Efficient Bulk Heterojunction Solar Cells Fabricated on MoOx Anode Interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Jasieniak, Jacek J.; Treat, Neil D.; McNeill, Christopher R.; Tremolet de Villers, Bertrand J.; Gaspera, Enrico Della; Chabinyc, Michael L.

    2016-05-25

    The role of the interface between an MoOx anode interlayer and a polymer:fullerene bulk heterojunction is investigated. Processing differences in the MoOx induce large variations in the vertical stratification of the bulk heterojunction films. These variations are found to be inconsistent in predicting device performance, with a much better gauge being the quantity of polymer chemisorbed to the anode interlayer.

  10. Shutdown Policies for MEMS-Based Storage Devices -- Analytical Models

    NARCIS (Netherlands)

    Khatib, M.G.; Engelen, Johannes Bernardus Charles; Hartel, Pieter H.

    MEMS-based storage devices should be energy ecient for deployment in mobile systems. Since MEMS-based storage devices have a moving me- dia sled, they should be shut down during periods of inactivity. However, shutdown costs energy, limiting the applicability of aggressive shutdown decisions. The

  11. Sexithiophene-C-60 blends as model systems for photovoltaic devices

    NARCIS (Netherlands)

    Veenstra, S.C.; Malliaras, G.G; Brouwer, H.J; Esselink, F.J; Krasnikov, V.V.; Hutten , van P.F.; Wildeman, J.; Jonkman, H.T.; Sawatzky, G.A; Hadziioannou, G

    Large photovoltaic responses have been recently observed in devices based on donor-acceptor blends. Their enhanced performance, which relies on the formation of a bicontinuous network of internal heterojunctions, is very sensitive to the morphology of the blend. In this paper, we propose

  12. Magnesium-based methods, systems, and devices

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yufeng; Ban, Chunmei; Ruddy, Daniel; Parilla, Philip A.; Son, Seoung-Bum

    2017-12-12

    An aspect of the present invention is an electrical device, where the device includes a current collector and a porous active layer electrically connected to the current collector to form an electrode. The porous active layer includes MgB.sub.x particles, where x.gtoreq.1, mixed with a conductive additive and a binder additive to form empty interstitial spaces between the MgB.sub.x particles, the conductive additive, and the binder additive. The MgB.sub.x particles include a plurality of boron sheets of boron atoms covalently bound together, with a plurality of magnesium atoms reversibly intercalated between the boron sheets and ionically bound to the boron atoms.

  13. Interfacial and Electrode Modifications in P3HT:PC61BM based Organic Solar Cells: Devices, Processing and Characterization

    Science.gov (United States)

    Das, Sayantan

    The inexorable upsurge in world’s energy demand has steered the search for newer renewable energy sources and photovoltaics seemed to be one of the best alternatives for energy production. Among the various photovoltaic technologies that emerged, organic/polymer photovoltaics based on solution processed bulk-heterojunctions (BHJ) of semiconducting polymers has gained serious attention owing to the use of inexpensive light-weight materials, exhibiting high mechanical flexibility and compatibility with low temperature roll-to-roll manufacturing techniques on flexible substrates. The most widely studied material to date is the blend of regioregular P3HT and PC61BM used as donor and acceptor materials. The object of this study was to investigate and improve the performance/stability of the organic solar cells by use of inexpensive materials. In an attempt to enhance the efficiency of organic solar cells, we have demonstrated the use of hexamethyldisilazane (HMDS) modified indium tin oxide (ITO) electrode in bulk heterojunction solar cell structure The device studies showed a significant enhancement in the short-circuit current as well as in the shunt resistance on use of the hexamethyldisilazane (HMDS) layer. In another approach a p-type CuI hole-transport layer was utilized that could possibly replace the acidic PEDOT:PSS layer in the fabrication of high-efficiency solar cells. The device optimization was done by varying the concentration of CuI in the precursor solution which played an important role in the efficiency of the solar cell devices. Recently a substantial amount of research has been focused on identifying suitable interfacial layers in organic solar cells which has efficient charge transport properties. It was illustrated that a thin layer of silver oxide interfacial layer showed a 28% increase in power conversion efficiency in comparison to that of the control cell. The optoelectronic properties and morphological features of indium-free Zn

  14. Sputtered nickel oxide thin film for efficient hole transport layer in polymer–fullerene bulk-heterojunction organic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Widjonarko, N. Edwin [Univ. of Colorado, Boulder, CO (United States). Dept. of Physics; National Renewable Energy Lab. (NREL), Golden, CO (United States); Ratcliff, Erin L. [Univ. of Arizona, Tucson, AZ (United States). Dept. of Chemistry and Biochemistry; Perkins, Craig L. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Sigdel, Ajaya K. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Denver, CO (United States). Dept. of Physics and Astronomy; Zakutayev, Andriy [National Renewable Energy Lab. (NREL), Golden, CO (United States); Ndione, Paul F. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Gillaspie, Dane T. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Ginley, David S. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Olson, Dana C. [National Renewable Energy Lab. (NREL), Golden, CO (United States); Berry, Joseph J. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2012-03-01

    Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are promising thin-film renewable energy conversion options due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication.

  15. Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments

    Science.gov (United States)

    Fu, Ssu-I.; Cheng, Shiou-Ying; Liu, Wen-Chau

    2006-05-01

    The characteristics of the InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatment are studied and demonstrated. Based on the use of sulfur passivation, the series resistance of a base-emitter B-E junction can be effectively reduced and the series resistance dominant regimes (decrease of current gain) are presented at a higher collector current regime. The device with sulfur treatment can be operated under extremely low collector current (I≅10-11 A) region, which offers the promise for low-power electronics applications. It is known that, from experimental results, the too long time for sulfur treatment is not necessary. Furthermore, the studied devices with sulfur treatment can remarkably reduce the collector-emitter offset voltage ΔV and emitter size effect, and improve the high-frequency performance.

  16. Fabrication and Analysis of Chemically-Derived Graphene/Pyramidal Si Heterojunction Solar Cells

    Science.gov (United States)

    Lee, Wen-Chieh; Tsai, Meng-Lin; Chen, You-Ling; Tu, Wei-Chen

    2017-04-01

    In the study, the chemically-derived reduced graphene oxide flakes on the pyramidal Si substrate to construct the heterojunction solar cells via simple spin-coating process have been presented. The total reflectance of chemically-derived graphene on pyramidal Si is ~12% at the wavelength of 550 nm which is remarkably reduced compared with that of reduced graphene oxide on planar Si. By modifying the density and distribution of reduced graphene oxide flakes on Si, the power conversion efficiency of 5.20% is achieved. Additionally, the simulated absorbance of different-thick graphene is implemented to optimize the performance of graphene/pyramidal Si devices. The fabrication technique for rGO-based devices has the merits of simplicity, large scale, high throughput and low cost, which is a new starting point in the direction of graphene-based material for the applications of next generation optoelectronics.

  17. Carbon Nanotube Based Devices for Intracellular Analysis

    Science.gov (United States)

    Singhal, Riju Mohan

    Scientific investigations on individual cells have gained increasing attention in recent years as efforts are being made to understand cellular functioning in complex processes, such as cell division during embryonic development, and owing to realization of heterogeneity amongst a population of a single cell type (for instance, certain individual cancer cells being immune to chemotherapy). Therefore devices enabling electrochemical detection, spectroscopy, optical observations, and separation techniques, along with cell piercing and fluid transfer capabilities at the intra-cellular level, are required. Glass pipettes have conventionally been used for single cell interrogation, however their poor mechanical properties and an intrusive conical geometry have led to limited precision and frequent cell damage or death, justifying research efforts to develop novel, non-intrusive cell probes. Carbon nanotubes (CNTs) are known for their superior physical properties and tunable chemical structure. They possess a high aspect ratio and offer minimally invasive thin carbon walls and tubular geometry. Moreover, possibility of chemical functionalization of CNTs enables multi-functional probes. In this dissertation, novel nanofluidic instruments that have nanostructured carbon tips will be presented along with techniques that utilize the exceptional physical properties of carbon nanotubes, to take miniature biomedical instrumentation to the next level. New methods for fabricating the probes were rigorously developed and their operation was extensively studied. The devices were mechanically robust and were used to inject liquids to a single cell, detect electrochemical signals and enable surface enhanced Raman spectroscopy (SERS) while inducing minimal harm to the cell. Particular attention was focused on the CVD process-which was used to deposit carbon, fluid flow through the nanotubes, and separation of chemical species (atto-liter chromatography) at the nanometer scale that

  18. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  19. Molecular bulk heterojunctions: an emerging approach to organic solar cells.

    Science.gov (United States)

    Roncali, Jean

    2009-11-17

    The predicted exhaustion of fossil energy resources and the pressure of environmental constraints are stimulating an intensification of research on renewable energy sources, in particular, on the photovoltaic conversion of solar energy. In this context, organic solar cells are attracting increasing interest that is motivated by the possibility of fabricating large-area, lightweight, and flexible devices using simple techniques with low environmental impact. Organic solar cells are based on a heterojunction resulting from the contact of a donor (D) and an acceptor (A) material. Absorption of solar photons creates excitons, Coulombically bound electron-hole pairs, which diffuse to the D/A interface, where they are dissociated into free holes and electrons by the electric field. D/A heterojunctions can be created with two types of architectures, namely, bilayer heterojunction and bulk heterojunction (BHJ) solar cells. BHJ cells combine the advantages of easier fabrication and higher conversion efficiency due to the considerably extended D/A interface. Until now, the development of BHJ solar cells has been essentially based on the use of soluble pi-conjugated polymers as donor material. Intensive interdisciplinary research carried out in the past 10 years has led to an increase in the conversion efficiency of BHJ cells from 0.10 to more than 5.0%. These investigations have progressively established regioregular poly(3-hexylthiophene) (P3HT) as the standard donor material for BHJ solar cells, owing to a useful combination of optical and charge-transport properties. However, besides the limit imposed to the maximum conversion efficiency by its intrinsic electronic properties, P3HT and more generally polymers pose several problems related to the control of their structure, molecular weight, polydispersity, and purification. In this context, recent years have seen the emergence of an alternative approach based on the replacement of polydisperse polymers by soluble

  20. A development of power button device driver based on Windows CE device driver

    Science.gov (United States)

    Lim, Samsu; Chon, Sunghwan; Choi, Hyunsok; Ham, Woonchul

    2005-12-01

    In recent decade, there has been many researches for embedding a small size operating system for mobile hand held systems. In near future, small size operating system will be embedded in every electronic machine for the easiness of developing a man-machine interface. This paper introduced one of the new hot issuing small size operating systems, called as "wince OS", which was developed by Microsoft company and develop a simple device driver based on wince OS which can handles a simple matrix type push button input device. It also demonstrated the well functioning of the proposed device driver in working environment such as Microsoft word processing.

  1. Polymer ring resonator based devices prepared by DLW

    Science.gov (United States)

    Jandura, D.; Pudis, D.; Gaso, P.; Goraus, M.

    2017-05-01

    In this paper, the fabrication method of waveguide structures and devices as ring resonators for different waveguide applications based on polymer material is presented. The structures were designed in computer-aided design (CAD) software and two-photon polymerization lithography system was used for preparation of desired devices. Morphological properties of prepared devices were investigated using scanning electron microscope (SEM) and confocal microscope. Finally, we performed measurement of optical spectrum characteristics in telecommunication wavelengths range. The results corresponds to calculated parameters. Final polymer devices are promising for lab on a chip and sensing applications due to unique elastic and chemical properties.

  2. Optoelectronics Devices Based on Zinc Oxide Thin Films and Nanostructures

    OpenAIRE

    Chu, Sheng

    2011-01-01

    Optoelectronics devices based on ZnO thin films and nanostructures are discussed in this dissertation. A ZnO homojunction LED was demonstrated. Sb-doped p-type ZnO and Ga-doped n-type ZnO on Si (100) substrate were used for the LED device. After achieving ohmic contacts on both types of ZnO, the device showed rectifying current-voltage (I-V) characteristics. Under forward bias, the device successfully showed ultraviolet emissions. The emission properties were analyzed and the emission was con...

  3. A microfluidic device based on an evaporation-driven micropump

    NARCIS (Netherlands)

    Nie, C.; Frijns, A.J.H.; Mandamparambil, R.; Toonder, J.M.J. den

    2015-01-01

    In this paper we introduce a microfluidic device ultimately to be applied as a wearable sweat sensor. We show proof-of-principle of the microfluidic functions of the device, namely fluid collection and continuous fluid flow pumping. A filter-paper based layer, that eventually will form the interface

  4. Ambient Sound-Based Collaborative Localization of Indeterministic Devices

    NARCIS (Netherlands)

    Kamminga, Jacob Wilhelm; Le Viet Duc, L Duc; Havinga, Paul J.M.

    2016-01-01

    Localization is essential in wireless sensor networks. To our knowledge, no prior work has utilized low-cost devices for collaborative localization based on only ambient sound, without the support of local infrastructure. The reason may be the fact that most low-cost devices are indeterministic and

  5. Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells.

    Science.gov (United States)

    Singh, Eric; Kim, Ki Seok; Yeom, Geun Young; Nalwa, Hari Singh

    2017-02-01

    Transition metal dichalcogenides (TMDs) are becoming significant because of their interesting semiconducting and photonic properties. In particular, TMDs such as molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), tungsten disulfide (WS2), tungsten diselenide (WSe2), titanium disulfide (TiS2), tantalum sulfide (TaS2), and niobium selenide (NbSe2) are increasingly attracting attention for their applications in solar cell devices. In this review, we give a brief introduction to TMDs with a focus on MoS2; and thereafter, emphasize the role of atomically thin MoS2 layers in fabricating solar cell devices, including bulk-heterojunction, organic, and perovskites-based solar cells. Layered MoS2 has been used as the hole-transport layer (HTL), electron-transport layer (ETL), interfacial layer, and protective layer in fabricating heterojunction solar cells. The trilayer graphene/MoS2/n-Si solar cell devices exhibit a power-conversion efficiency of 11.1%. The effects of plasma and chemical doping on the photovoltaic performance of MoS2 solar cells have been analyzed. After doping and electrical gating, a power-conversion efficiency (PCE) of 9.03% has been observed for the MoS2/h-BN/GaAs heterostructure solar cells. The MoS2-containing perovskites-based solar cells show a PCE as high as 13.3%. The PCE of MoS2-based organic solar cells exceeds 8.40%. The stability of MoS2 solar cells measured under ambient conditions and light illumination has been discussed. The MoS2-based materials show a great potential for solar cell devices along with high PCE; however, in this connection, their long-term environmental stability is also of equal importance for commercial applications.

  6. Probing Exciton Diffusion and Dissociation in Single-Walled Carbon Nanotube-C60 Heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Dowgiallo, Anne-Marie; Mistry, Kevin S.; Johnson, Justin C.; Reid, Obadiah G.; Blackburn, Jeffrey L.

    2016-05-19

    The efficiency of thin-film organic photovoltaic (OPV) devices relies heavily upon the transport of excitons to type-II heterojunction interfaces, where there is sufficient driving force for exciton dissociation and ultimately the formation of charge carriers. Semiconducting single-walled carbon nanotubes (SWCNTs) are strong near-infrared absorbers that form type-II heterojunctions with fullerenes such as C60. Although the efficiencies of SWCNT-fullerene OPV devices have climbed over the past few years, questions remain regarding the fundamental factors that currently limit their performance. In this study, we determine the exciton diffusion length in the C60 layer of SWCNT-C60 bilayer active layers using femtosecond transient absorption measurements. We demonstrate that hole transfer from photoexcited C60 molecules to SWCNTs can be tracked by the growth of narrow spectroscopic signatures of holes in the SWCNT 'reporter layer'. In bilayers with thick C60 layers, the SWCNT charge-related signatures display a slow rise over hundreds of picoseconds, reflecting exciton diffusion through the C60 layer to the interface. A model based on exciton diffusion with a Beer-Lambert excitation profile, as well as Monte Carlo simulations, gives the best fit to the data as a function of C60 layer thickness using an exciton diffusion length of approximately 5 nm.

  7. A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells

    KAUST Repository

    Chavali, Raghu Vamsi Krishna

    2016-11-30

    Suns–Voc measurements exclude parasitic series resistance effects and are, therefore, frequently used to study the intrinsic potential of a given photovoltaic technology. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the Suns–Voc curves often feature a peculiar turnaround at high illumination intensities. Generally, this turn-around is attributed to extrinsic Schottky contacts that should disappear with process improvement. In this paper, we demonstrate that this voltage turnaround may be an intrinsic feature of SHJ solar cells, arising from the heterojunction (HJ), as well as its associated carrier-transport barriers, inherent to SHJ devices. We use numerical simulations to explore the full current–voltage (J–V) characteristics under different illumination and ambient temperature conditions. Using these characteristics, we establish the voltage and illumination-intensity bias, as well as temperature conditions necessary to observe the voltage turnaround in these cells. We validate our turnaround hypothesis using an extensive set of experiments on a high-efficiency SHJ solar cell and a molybdenum oxide (MoOx) based hole collector HJ solar cell. Our work consolidates Suns–Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in HJ devices.

  8. Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells.

    Science.gov (United States)

    Jäckle, Sara; Liebhaber, Martin; Gersmann, Clemens; Mews, Mathias; Jäger, Klaus; Christiansen, Silke; Lips, Klaus

    2017-05-19

    We show that the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) can successfully be applied as a hole selective front contact in silicon heterojunction (SHJ) solar cells. In combination with a superior electron selective heterojunction back contact based on amorphous silicon (a-Si), mono-crystalline n-type silicon (c-Si) solar cells reach power conversion efficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV. Since in the PEDOT:PSS/c-Si/a-Si solar cell the inferior hybrid junction is determining the electrical device performance we are capable of assessing the recombination velocity (v I ) at the PEDOT:PSS/c-Si interface. An estimated v I of ~400 cm/s demonstrates, that while PEDOT:PSS shows an excellent selectivity on n-type c-Si, the passivation quality provided by the formation of a native oxide at the c-Si surface restricts the performance of the hybrid junction. Furthermore, by comparing the measured external quantum efficiency with optical simulations, we quantify the losses due to parasitic absorption of PEDOT:PSS and reflection of the device layer stack. By pointing out ways to better passivate the hybrid interface and to increase the photocurrent we discuss the full potential of PEDOT:PSS as a front contact in SHJ solar cells.

  9. Paper‐Based Electrodes for Flexible Energy Storage Devices

    Science.gov (United States)

    Yao, Bin; Zhang, Jing; Kou, Tianyi; Song, Yu; Liu, Tianyu

    2017-01-01

    Paper‐based materials are emerging as a new category of advanced electrodes for flexible energy storage devices, including supercapacitors, Li‐ion batteries, Li‐S batteries, Li‐oxygen batteries. This review summarizes recent advances in the synthesis of paper‐based electrodes, including paper‐supported electrodes and paper‐like electrodes. Their structural features, electrochemical performances and implementation as electrodes for flexible energy storage devices including supercapacitors and batteries are highlighted and compared. Finally, we also discuss the challenges and opportunity of paper‐based electrodes and energy storage devices. PMID:28725532

  10. Vertical MoSe2–MoO x p–n heterojunction and its application in optoelectronics

    Science.gov (United States)

    Chen, Xiaoshuang; Liu, Guangbo; Hu, Yunxia; Cao, Wenwu; Hu, PingAn; Hu, Wenping

    2018-01-01

    The hybrid n-type 2D transition-metal dichalcogenide (TMD)/p-type oxide van der Waals (vdW) heterojunction nanosheets consist of 2D layered MoSe2 (the n-type 2D material) and MoO x (the p-type oxide) which are grown on SiO2/Si substrates for the first time via chemical vapor deposition technique, displaying the regular hexagon structures with the average length dimension of sides of ∼8 μm. Vertical MoSe2–MoO x p–n heterojunctions demonstrate obviously current-rectifying characteristic, and it can be tuned via gate voltage. What is more, the photodetector based on vertical MoSe2–MoO x heterojunctions displays optimal photoresponse behavior, generating the responsivity, detectivity, and external quantum efficiency to 3.4 A W‑1, 0.85 × 108 Jones, and 1665.6%, respectively, at V ds = 5 V with the light wavelength of 254 nm under 0.29 mW cm‑2. These results furnish a building block on investigating the flexible and transparent properties of vdW and further optimizing the structure of the devices for better optoelectronic and electronic performance.

  11. Electrical Transport Properties of Carbon Nanotube Metal-Semiconductor Heterojunction

    Science.gov (United States)

    Talukdar, Keka; Shantappa, Anil

    2016-10-01

    Carbon nanotubes (CNTs) have been proved to have promising applicability in various fields of science and technology. Their fascinating mechanical, electrical, thermal, optical properties have caught the attention of today’s world. We have discussed here the great possibility of using CNTs in electronic devices. CNTs can be both metallic and semiconducting depending on their chirality. When two CNTs of different chirality are joined together via topological defects, they may acquire rectifying diode property. We have joined two tubes of different chiralities through circumferential Stone-Wales defects and calculated their density of states by nearest neighbor tight binding approximation. Transmission function is also calculated to analyze whether the junctions can be used as electronic devices. Different heterojunctions are modeled and analyzed in this study. Internal stresses in the heterojunctions are also calculated by molecular dynamics simulation.

  12. High Aspect Ratio Semiconductor Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Redwing, Joan [Pennsylvania State Univ., University Park, PA (United States). Dept. of Material Science and Engineering; Mallouk, Tom [Pennsylvania State Univ., University Park, PA (United States). Dept. of Chemistry; Mayer, Theresa [Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering; Dickey, Elizabeth [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Wronski, Chris [Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering

    2013-05-17

    The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematic and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (Voc>0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion

  13. Visualizing excitations at buried heterojunctions in organic semiconductor blends

    Science.gov (United States)

    Jakowetz, Andreas C.; Böhm, Marcus L.; Sadhanala, Aditya; Huettner, Sven; Rao, Akshay; Friend, Richard H.

    2017-05-01

    Interfaces play a crucial role in semiconductor devices, but in many device architectures they are nanostructured, disordered and buried away from the surface of the sample. Conventional optical, X-ray and photoelectron probes often fail to provide interface-specific information in such systems. Here we develop an all-optical time-resolved method to probe the local energetic landscape and electronic dynamics at such interfaces, based on the Stark effect caused by electron-hole pairs photo-generated across the interface. Using this method, we found that the electronically active sites at the polymer/fullerene interfaces in model bulk-heterojunction blends fall within the low-energy tail of the absorption spectrum. This suggests that these sites are highly ordered compared with the bulk of the polymer film, leading to large wavefunction delocalization and low site energies. We also detected a 100 fs migration of holes from higher- to lower-energy sites, consistent with these charges moving ballistically into more ordered polymer regions. This ultrafast charge motion may be key to separating electron-hole pairs into free charges against the Coulomb interaction.

  14. Bistable memory device based on DNA biopolymer nanocomposite

    Science.gov (United States)

    Lin, Yi-Tzu; Lin, Ting-Yu; Hung, Yu-Chueh

    2014-05-01

    Deoxyribonucleic acid (DNA), as one kind of biopolymer, has recently emerged as an attractive optical material, showing promise in making versatile optoelectronic devices. In the present study, we report the fabrication and characterization of DNA biopolymer nanocomposite with tunable conductivities and the application in bistable memory device. DNA nanocomposite consisting of DNA biopolymer and silver nanoparticles is synthesized using a phototriggered method. The nanocomposite exhibits tunable conductivities when exposed to UV light under different periods of time. The electrical conductivity is suggested to be dependent on the quantity and the distribution of silver nanoparticles formed in DNA biopolymer. In addition, a memory device based on DNA biopolymer nanocomposite is demonstrated. The operation of different conductivity states can be adjusted by the concentration of nanoparticles. The device shows bistability of current, and presents a stable write-read-erase cycle. Detailed performance of the DNA-based memory device will be presented and discussed.

  15. Product-based Safety Certification for Medical Devices Embedded Software.

    Science.gov (United States)

    Neto, José Augusto; Figueiredo Damásio, Jemerson; Monthaler, Paul; Morais, Misael

    2015-01-01

    Worldwide medical device embedded software certification practices are currently focused on manufacturing best practices. In Brazil, the national regulatory agency does not hold a local certification process for software-intensive medical devices and admits international certification (e.g. FDA and CE) from local and international industry to operate in the Brazilian health care market. We present here a product-based certification process as a candidate process to support the Brazilian regulatory agency ANVISA in medical device software regulation. Center of Strategic Technology for Healthcare (NUTES) medical device embedded software certification is based on a solid safety quality model and has been tested with reasonable success against the Class I risk device Generic Infusion Pump (GIP).

  16. Understanding Charge Transfer in Carbon Nanotube–Fullerene Bulk Heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Maogang; Shastry, Tejas A.; Cui, Qiannan; Kohlmeyer, Ryan R. [National Research Council, Washington, D.C. 20001, United States; Soft; Luck, Kyle A.; Rowberg, Andrew; Marks, Tobin J.; Durstock, Michael F. [Soft; Zhao, Hui; Hersam, Mark C.; Ren, Shenqiang

    2015-03-27

    Semiconducting single-walled carbon nanotube/fullerene bulk heterojunctions exhibit unique optoelectronic properties highly suitable for flexible, efficient, and robust photovoltaics and photodetectors. We investigate charge-transfer dynamics in inverted devices featuring a polyethylenimine-coated ZnO nanowire array infiltrated with these blends and find that trap-assisted recombination dominates transport within the blend and at the active layer/nanowire interface. We find that electrode modifiers suppress this recombination, leading to high performance.

  17. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  18. Use of the Thermal Chemical Vapor Deposition to Fabricate Light-Emitting Diodes Based on ZnO Nanowire/p-GaN Heterojunction

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2011-01-01

    Full Text Available The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.

  19. Dynamic IR Scene Projector Based Upon the Digital Micromirror Device

    National Research Council Canada - National Science Library

    Beasley, D. B; Bender, Matt; Crosby, Jay; Messer, Tim; Saylor, Daniel A

    2001-01-01

    ...). The MAPS is based upon the Texas Instruments Digital Micromirror Device (DMD) which has been modified to project images which are suitable for testing sensor and seekers operating in the UV, visible, and IR wavebands...

  20. Energy-Based Devices in Treatment of Acne Vulgaris.

    Science.gov (United States)

    Handler, Marc Z; Bloom, Bradley S; Goldberg, David J

    2016-05-01

    Acne vulgaris is a chronic dermatologic complaint with a multifactorial cause. Traditionally, antibiotics and retinoids have been used to manage the condition; patient compliance has been an ongoing issue. A variety of energy-based devices have been reported to be effective in the treatment of acne vulgaris. To review and summarize the current literature specific to treatment of acne vulgaris with energy-based devices. A review of the current literature of energy-based devices used for the treatment of acne vulgaris. Although limited randomized controlled trials for the treatment of acne have been performed, significant clinical improvement of acne vulgaris, especially of inflammatory lesions, has been demonstrated with a variety of energy-based devices. Newer approaches may lead to even better results.

  1. Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors

    Science.gov (United States)

    Oxland, R. K.; Rahman, F.

    2008-08-01

    This paper reports on the development of effective passivation techniques for improving and stabilizing the characteristics of InP/InGaAs heterojunction bipolar transistors. Two different methods for carrying out sulfur-based surface passivations are compared. These include exposure to gaseous hydrogen sulfide and immersion treatment in an ammonium sulfide solution. The temporal behaviour of effects resulting from such passivation treatments is reported. It is shown that liquid phase passivation has a larger beneficial effect on device performance than gas phase passivation. This is explained in terms of the polarity of passivating species and the exposed semiconductor surface. Finally, device encapsulation in a novel chalcogenide polymer is shown to be effective in preserving the benefits of surface passivation treatments. The relevant properties of this encapsulation material are also discussed.

  2. Single walled carbon nanotube/Si heterojunctions for high responsivity photodetectors

    Science.gov (United States)

    Salvato, M.; Scagliotti, M.; De Crescenzi, M.; Crivellari, M.; Prosposito, P.; Cacciotti, I.; Castrucci, P.

    2017-10-01

    Single walled carbon nanotube/n-Si (SWCNT/n-Si) hetero-junctions have been obtained by depositing SWCNT ultra-thin films on the surface of an n-Si substrate by dry transfer method. The as obtained junctions are photo sensitive in the measured wavelength range (300-1000 nm) and show zero bias responsivity and detectivity values of the order of 1 A W-1 and 1014 Jones respectively, which are higher than those previously observed in carbon based devices. Moreover, under on-off light excitation, the junctions show response speed as fast as 1 μs or better and noise equivalent powers comparable to commercial Si photomultipliers. Current-voltage measurements in dark and under illumination suggest that the devices consist of Schottky and semiconductor/semiconductor junctions both contributing to the fast and high responses observed.

  3. Modeling the cutoff frequency of single-heterojunction bipolar transistors subjected to high collector-layer current

    Science.gov (United States)

    Liou, J. J.; Lindholm, F. A.; Wu, B. S.

    1990-06-01

    High current densities in the collector layer reduce the cutoff frequency of heterojunction bipolar transistors. A model is developed based on analytical expressions that describe this reduction. These expressions represent the contributions from each of six regions defined in the output current-voltage characteristic. The model has parameters determined entirely by device physical makeup. It has no fitting parameters. Its predictions agree well with experimental data taken on two N/p+/n aluminum-gallium-arsenide/gallium-arsenide transistors having abrupt junctions grown by molecular-beam epitaxy. The development of the model considers the effects that compound-semiconductor properties, such as velocity overshoot, have on the cutoff frequency.

  4. ZnO Nanowire Array-Based Optoelectronic Devices

    OpenAIRE

    Wang, Guoping

    2011-01-01

    ZnO nanowire array-based optoelectronic devices are discussed in this dissertation. ZnO has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature, which make it a promising candidate for optoelectronic devices such as blue-light emitting diodes, ultraviolet laser diodes and photodiodes. Recently, there have been tremendous interests in ZnO nanowire arrays. It is well known that one of the biggest challenges toward good ZnO-based optoelectronic devices is ...

  5. A Flexible Microcontroller-Based Data Acquisition Device

    Directory of Open Access Journals (Sweden)

    Darko Hercog

    2014-06-01

    Full Text Available This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC. The presented embedded DAQ device contains a preloaded program (firmware that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID. This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI, can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

  6. A flexible microcontroller-based data acquisition device.

    Science.gov (United States)

    Hercog, Darko; Gergič, Bojan

    2014-06-02

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

  7. Innovative energy absorbing devices based on composite tubes

    Science.gov (United States)

    Tiwari, Chandrashekhar

    Analytical and experimental study of innovative load limiting and energy absorbing devices are presented here. The devices are based on composite tubes and can be categorized in to two groups based upon the energy absorbing mechanisms exhibited by them, namely: foam crushing and foam fracturing. The device based on foam crushing as the energy absorbing mechanism is composed of light weight elastic-plastic foam filling inside an angle ply composite tube. The tube is tailored to have a high Poisson’s ratio (>20). Upon being loaded the device experiences large transverse contraction resulting in rapid decrease in diameter. At a certain axial load the foam core begins to crush and energy is dissipated. This device is termed as crush tube device. The device based upon foam shear fracture as the energy absorbing mechanism involves an elastic-plastic core foam in annulus of two concentric extension-twist coupled composite tubes with opposite angles of fibers. The core foam is bonded to the inner and outer tube walls. Upon being loaded axially, the tubes twist in opposite directions and fracture the core foam in out of plane shear and thus dissipate the energy stored. The device is termed as sandwich core device (SCD). The devices exhibit variations in force-displacement characteristics with changes in design and material parameters, resulting in wide range of energy absorption capabilities. A flexible matrix composite system was selected, which was composed of high stiffness carbon fibers as reinforcements in relatively low stiffness polyurethane matrix, based upon large strain to failure capabilities and large beneficial elastic couplings. Linear and non-linear analytical models were developed encapsulating large deformation theory of the laminated composite shells (using non-linear strain energy formulation) to the fracture mechanics of core foam and elastic-plastic deformation theory of the foam filling. The non-linear model is capable of including material and

  8. Effect of doping and stoichiometric profile on transport in SiGe heterojunction bipolar transistor

    Science.gov (United States)

    Halilov, S.

    2016-09-01

    Based on analytical consideration and numerical simulations, it is shown how the mutually adjusted doping and stoichiometric profile results in improved frequency response and current gain in Si1-x Ge x -based heterojunction bipolar transistor. The closed-form expressions are derived for the dopant distribution within a certain mobility model which is parametrized in terms of the impurity concentration and stoichiometric grading on the same footing. With proper parametrization of the mobility, the method is suitable in both limits of high alloy scattering/low crystal ordering and low alloy scattering/highly ordered stoichiometrically graded structure. The work is corroborated by device simulations of a single-side HBT 30% stoichiometrically graded base, with detailed IV-curve, Gummel and AC analysis. It is shown that the distinct impurity distribution results in a reduced space-charge region, contributes to an effective electric field assisting the diffusion of the minority carriers and results in the saturation current density increased by 50%, the AC gain increased by 90%, the four-fold increase of the DC current gain, and improves the transition frequency from 274 to 358 GHz as compared to the case of the uniformly distributed acceptors. The obtained results may serve as a practical guide in design of highly-graded heterojunction bipolar transistors with efficient frequency response, high gain and enhanced power.

  9. Cardiac Device Implant Skin Closure with a Novel Adjustable, Coaptive Tape-Based Device.

    Science.gov (United States)

    Lalani, Gautam G; Schricker, Amir A; Salcedo, Jonathan; Hebsur, Shrinivas; Hsu, Jonathan; Feld, Gregory; Birgersdotter-Green, Ulrika

    2016-10-01

    The purpose of this study was to compare a unique zip-type adjustable coaptive tape-based skin closure device to traditional subcuticular sutures in three domains: time, cosmesis, and wound closure-related outcomes in cardiac implantable electronic device (CIED) procedures. A total of 40 patients were enrolled in a prospective randomized controlled trial to assess time to wound closure, as well as cosmesis and wound closure-related outcomes. The adjustable coaptive tape-based skin closure device had shorter overall closure time (78 ± 6.6 seconds vs 216 ± 21.5 seconds; P < 0.001) and mean closure time per centimeter (18.0 ± 2.0 s/cm vs 50.1 ± 6.7 s/cm; P < 0.001) versus sutures, with less intersurgeon and interpatient variability with the use of adjustable coaptive device versus sutures (P < 0.001). There was no difference between groups in postoperative pain or scar cosmesis during the follow-up period. Neither group had any closure-related adverse events. The adjustable coaptive tape-based skin closure device demonstrated shorter closure times with less variability when compared to sutures. It is a safe and acceptable alternative to sutures for skin closure following CIED implantation. © 2016 Wiley Periodicals, Inc.

  10. Structural determinants in the bulk heterojunction.

    Science.gov (United States)

    Acocella, Angela; Höfinger, Siegfried; Haunschmid, Ernst; Pop, Sergiu C; Narumi, Tetsu; Yasuoka, Kenji; Yasui, Masato; Zerbetto, Francesco

    2018-02-21

    Photovoltaics is one of the key areas in renewable energy research with remarkable progress made every year. Here we consider the case of a photoactive material and study its structural composition and the resulting consequences for the fundamental processes driving solar energy conversion. A multiscale approach is used to characterize essential molecular properties of the light-absorbing layer. A selection of bulk-representative pairs of donor/acceptor molecules is extracted from the molecular dynamics simulation of the bulk heterojunction and analyzed at increasing levels of detail. Significantly increased ground state energies together with an array of additional structural characteristics are identified that all point towards an auxiliary role of the material's structural organization in mediating charge-transfer and -separation. Mechanistic studies of the type presented here can provide important insights into fundamental principles governing solar energy conversion in next-generation photovoltaic devices.

  11. Organoboron polymers for photovoltaic bulk heterojunctions.

    Science.gov (United States)

    Cataldo, Sebastiano; Fabiano, Simone; Ferrante, Francesco; Previti, Francesco; Patanè, Salvatore; Pignataro, Bruno

    2010-07-15

    We report on the application of three-coordinate organoboron polymers, inherently strong electron acceptors, in flexible photovoltaic (PV) cells. Poly[(1,4-divinylenephenylene)(2,4,6-triisopropylphenylborane)] (PDB) has been blended with poly(3-hexylthiophene-2,5-diyl) (P3HT) to form a thin film bulk heterojunction (BHJ) on PET/ITO substrates. Morphology may be modulated to give a high percentage of domains (10-20 nm in size) allowing exciton separation. The photoelectric properties of the BHJs in devices with aluminium back electrodes were imaged by light beam induced current (LBIC) and light beam induced voltage (LBIV) techniques. Open circuit voltages, short circuit currents and overall external quantum efficiencies obtained are among the highest reported for all-polymer PV cells. Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Medical Device Integration Model Based on the Internet of Things.

    Science.gov (United States)

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  13. Medical Device Integration Model Based on the Internet of Things

    Science.gov (United States)

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  14. Composition and doping control for metal-organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

    Science.gov (United States)

    Hoshi, Takuya; Kashio, Norihide; Sugiyama, Hiroki; Yokoyama, Haruki; Kurishima, Kenji; Ida, Minoru; Matsuzaki, Hideaki

    2017-07-01

    We report on a method for composition and doping control for metalorganic chemical vapor deposition of a double heterojunction bipolar transistor (DHBT) with a hybrid base structure consisting of a compositionally graded InGaAsSb for boosting an average electron velocity and a heavily doped thin GaAsSb for lowering the base contact resistivity. The GaAsSb contact layer can be formed by simply turning off the supply of In precursor tetramethylindium (TMIn) after the growth of the composition and doping graded InGaAsSb base. Consequently, the solid composition and hole concentration of hybrid base can be properly controlled by just modulating the supply of only TMIn and carbon tetrabromide. Secondary ion mass spectroscopy for the DHBT wafer reveals that the contents of In, Ga, and C inside the base are actually modulated from the collector side to the emitter side as expected. Transmission-line-model measurements were performed for the compositionally graded-InGaAsSb/GaAsSb hybrid base. The contact resistivity is estimated to be 5.3 Ω µm2, which is lower than half the value of a compositionally graded InGaAsSb base without the GaAsSb contact layer. The results indicate that the compositionally-graded-InGaAsSb/GaAsSb-contact hybrid base structure grown by this simple method is very advantageous for obtaining DHBTs with a very high maximum oscillation frequency.

  15. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

    Science.gov (United States)

    Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

    2017-09-13

    A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al0.27GaN0.73(∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO2, SO2, and HCHO gases exhibit high sensitivity (0.88-1.88 ppm-1), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

  16. Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

    Directory of Open Access Journals (Sweden)

    Lei Wang

    2017-01-01

    Full Text Available In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the networks successfully recover the original file. The experimental results show that secure network coding is very feasible and suitable for such file sharing. Moreover, the sharing efficiency and security outperform traditional replication-based sharing scheme.

  17. A Rhythm-Based Authentication Scheme for Smart Media Devices

    Directory of Open Access Journals (Sweden)

    Jae Dong Lee

    2014-01-01

    Full Text Available In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users’ convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience.

  18. A rhythm-based authentication scheme for smart media devices.

    Science.gov (United States)

    Lee, Jae Dong; Jeong, Young-Sik; Park, Jong Hyuk

    2014-01-01

    In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users' convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS) is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience.

  19. Discontinuous pn-heterojunction for organic thin film transistors

    NARCIS (Netherlands)

    Cho, B.; Yu, S.H.; Kim, M.; Lee, M.H.; Huh, W.; Lee, J.; Kim, J.; Cho, J.H.; Lee, J.Y.; Song, Y.J.; Kang, M.S.

    2014-01-01

    Utilization of discontinuous pn-oragnic heterojunction is introduced as a versatile method to improve charge transport in organic thin film transistors (OTFTs). The method is demonstrated by depositing n-type dioctyl perylene tetracarboxylic diimide (PTCDI-C8) discontinuously onto base p-type

  20. Isotachophoretic preconcenetration on paper-based microfluidic devices.

    Science.gov (United States)

    Moghadam, Babak Y; Connelly, Kelly T; Posner, Jonathan D

    2014-06-17

    Paper substrates have been widely used to construct point-of-care lateral flow immunoassay (LFIA) diagnostic devices. Paper based microfluidic devices are robust and relatively simple to operate, compared to channel microfluidic devices, which is perhaps their greatest advantage and the reason they have reached a high level of commercial success. However, paper devices may not be well suited for integrated sample preparation, such as sample extraction and preconcentration, which is required in complex samples with low analyte concentrations. In this study, we investigate integration of isotachophoresis (ITP), an electrokinetic preconcentration and extraction technique, onto nitrocellulose-based paper microfluidic devices with the goal to improve the limit of detection of LFIA. ITP has been largely used in traditional capillary based microfluidic devices as a pretreatment method to preconcentrate and separate a variety of ionic compounds. Our findings show that ITP on nitrocellulose is capable of up to a 900 fold increase in initial sample concentration and up to 60% extraction from 100 μL samples and more than 80% extraction from smaller sample volumes. Paper based ITP is challenged by Joule heating and evaporation because it is open to the environment. We achieved high preconcentration by mitigating evaporation induced dispersion using novel cross-shaped device structures that keep the paper hydrated. We show that ITP on the nitrocellulose membrane can be powered and run several times by a small button battery suggesting that it could be integrated to a portable point-of-care diagnostic device. These results highlight the potential of ITP to increase the sensitivity of paper based LFIA under conditions where small analyte concentrations are present in complex biological samples.

  1. Fabrication of paper based microfluidic devices

    CSIR Research Space (South Africa)

    Govindasamy, K

    2012-07-01

    Full Text Available flow tests) which operate on a similar principal, are an example of point of care diagnostics. Paper based microfluidics aims to address the inherent inadequacies of standard lateral flow tests. This includes improving the sensitivity...@uj.ac.za). maintaining low cost and simplicity. Development of low cost diagnostics is vital for developing countries like South Africa, where rural communities lack access to basic health care and clean drinking water. These tests provide a rapid alternative...

  2. Mapping Energy Levels for Organic Heterojunctions.

    Science.gov (United States)

    Li, Yiying; Li, Peicheng; Lu, Zheng-Hong

    2017-06-01

    An organic semiconductor thin film is a solid-state matter comprising one or more molecules. For applications in electronics and photonics, several distinct functional organic thin films are stacked together to create a variety of devices such as organic light-emitting diodes and organic solar cells. The energy levels at these thin-film junctions dictate various electronic processes such as the charge transport across these junctions, the exciton dissociation rates at donor-acceptor molecular interfaces, and the charge trapping during exciton formation in a host-dopant system. These electronic processes are vital to a device's performance and functionality. To uncover a general scientific principle in governing the interface energy levels, highest occupied molecular orbitals, and vacuum level dipoles, herein a comprehensive experimental research is conducted on several dozens of organic-organic heterojunctions representative of various device applications. It is found that the experimental data map on interface energy levels, after correcting variables such as molecular orientation-dependent ionization energies, consists of three distinct regions depending on interface fundamental physical parameters such as Fermi energy, work function, highest occupied molecular orbitals, and lowest unoccupied molecular orbitals. This general energy map provides a master guide in selection of new materials for fabricating future generations of organic semiconductor devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices.

    Science.gov (United States)

    O'Toole, Martina; Diamond, Dermot

    2008-04-07

    The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical sensing. This paper summarises the development and advancement of LED based chemical sensors and sensing devices in terms of their configuration and application, with the focus on transmittance and reflectance absorptiometric measurements.

  4. New Multiphase Matrix Converter Based Device for Power Flow Control

    Directory of Open Access Journals (Sweden)

    Jerzy Szczepanik

    2013-12-01

    Full Text Available The article presents the concept of new matrix converter (MC based device working as a phase shifting control device in a power system. The multiphase MC is working under an innovative control algorithm specially dedicated to the proposed application. The work presents the results of the simulation of the MC work in this application as well as the analysis of the MC properties.

  5. Chemical engineering in the electronics industry: progress towards the rational design of organic semiconductor heterojunctions

    KAUST Repository

    Clancy, Paulette

    2012-05-01

    We review the current status of heterojunction design for combinations of organic semiconductor materials, given its central role in affecting the device performance for electronic devices and solar cell applications. We provide an emphasis on recent progress towards the rational design of heterojunctions that may lead to higher performance of charge separation and mobility. We also play particular attention to the role played by computational approaches and its potential to help define the best choice of materials for solar cell development in the future. We report the current status of the field with respect to such goals. © 2012 Elsevier Ltd.

  6. Ambient Sound-Based Collaborative Localization of Indeterministic Devices

    Directory of Open Access Journals (Sweden)

    Jacob Kamminga

    2016-09-01

    Full Text Available Localization is essential in wireless sensor networks. To our knowledge, no prior work has utilized low-cost devices for collaborative localization based on only ambient sound, without the support of local infrastructure. The reason may be the fact that most low-cost devices are indeterministic and suffer from uncertain input latencies. This uncertainty makes accurate localization challenging. Therefore, we present a collaborative localization algorithm (Cooperative Localization on Android with ambient Sound Sources (CLASS that simultaneously localizes the position of indeterministic devices and ambient sound sources without local infrastructure. The CLASS algorithm deals with the uncertainty by splitting the devices into subsets so that outliers can be removed from the time difference of arrival values and localization results. Since Android is indeterministic, we select Android devices to evaluate our approach. The algorithm is evaluated with an outdoor experiment and achieves a mean Root Mean Square Error (RMSE of 2.18 m with a standard deviation of 0.22 m. Estimated directions towards the sound sources have a mean RMSE of 17.5 ° and a standard deviation of 2.3 °. These results show that it is feasible to simultaneously achieve a relative positioning of both devices and sound sources with sufficient accuracy, even when using non-deterministic devices and platforms, such as Android.

  7. Heterojunction of poly (o-toluidine) and silicon nanowires

    Science.gov (United States)

    El-Zohary, Salah E.; Shenashen, Mohamed. A.; Haleem, Ashraf M. Abdel; Tsuji, Akinori; Okamoto, Toshihiro; Haraguchi, M.

    2015-01-01

    A nanostructured poly (o-toluidine)/silicon nanowires (NPOT/SiNWs) heterojunction has been fabricated with a low cost and simple techniques, where NPOT has been in situ polymerized upon SiNWs synthesized by chemical etching of a silicon wafer. The morphology of SiNWs before and after deposition of NPOT has been examined by scanning electron microscope (SEM). The chemical composition of NPOT has been investigated by Fourier transform infrared (FTIR), ultraviolet-visible (UV-visible) spectroscopy, and X-ray diffraction (XRD) techniques. NPOT morphology has also been examined by SEM before being deposited on the SiNWs. I-V measurements of the device have been made at room temperature under dark conditions. The heterojunction diode parameters such as turn-on voltage, reverse saturation current (I0), ideality factor (η), barrier height (ΦB) and series resistance (Rs) have been determined from the I-V curves using Schottky equations. The device shows promising characteristics as a candidate for producing heterojunction diodes.

  8. Electronic properties of Cu-phthalocyanine-fullerene planar and bulk heterojunctions on PEDOT:PSS

    Energy Technology Data Exchange (ETDEWEB)

    Wilke, Andreas; Mizokuro, Toshiko; Blum, Ralf Peter; Rabe, Juergen P.; Koch, Norbert [Institut fuer Physik, Humboldt-Universitaet zu Berlin (Germany)

    2010-07-01

    In organic photovoltaic cells (OPVCs) typically two organic materials with electron-acceptor and electron-donor properties are placed between anode and cathode, forming either a layered planar or mixed bulk heterojunction where charge separation should occur. To improve the efficiency of this central process it is important to know and understand the energy levels at such heterojunctions, and how they may depend on heterojunction morphology. We report ultraviolet and X-ray photoelectron spectroscopy studies on layered planar and mixed bulk heterojunctions of Cu-phthalocyanine (CuPc) and C{sub 60}, a prototypical material pair for OPVCs. The respective heterojunctions were formed on poly(ethylene-dioxythiophene):poly(styrenesulfonate) substrates, in order to achieve morphologies comparable to those in actual OPVCs. The energy offset between the highest occupied levels of CuPc and C{sub 60} was determined to 1.3 eV for both the layered and mixed bulk heterojunction. Our results demonstrate that the energy levels that determined the efficiency of charge separation in OPVCs made of CuPC and C{sub 60} are independent of particular interface morphology, and that differences in device efficiency are due to other effects.

  9. The photoirradiation induced p-n junction in naphthylamine-based organic photovoltaic cells.

    Science.gov (United States)

    Bai, Linyi; Gao, Qiang; Xia, Youyi; Ang, Chung Yen; Bose, Purnandhu; Tan, Si Yu; Zhao, Yanli

    2015-09-21

    The bulk heterojunction (BHJ) plays an indispensable role in organic photovoltaics, and thus has been investigated extensively in recent years. While a p-n heterojunction is usually fabricated using two different donor and acceptor materials such as poly(3-hexylthiophene-2,5-diyl) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM), it is really rare that such a BHJ is constructed by a single entity. Here, we presented a photoirradiation-induced p-n heterojunction in naphthylamine-based organic photovoltaic cells, where naphthylamine as a typical p-type semiconductor could be oxidized under photoirradiation and transformed into a new semiconductor with the n-type character. The p-n heterojunction was realized using both the remaining naphthylamine and its oxidative product, giving rise to the performance improvement in organic photovoltaic devices. The experimental results show that the power conversion efficiency (PCE) of the devices could be achieved up to 1.79% and 0.43% in solution and thin film processes, respectively. Importantly, this technology using naphthylamine does not require classic P3HT and PCBM to realize the p-n heterojunction, thereby simplifying the device fabrication process. The present approach opens up a promising route for the development of novel materials applicable to the p-n heterojunction.

  10. In-situ fabrication of diketopyrrolopyrrole-carbazole-based conjugated polymer/TiO2 heterojunction for enhanced visible light photocatalysis

    Science.gov (United States)

    Yang, Long; Yu, Yuyan; Zhang, Jianling; Chen, Fu; Meng, Xiao; Qiu, Yong; Dan, Yi; Jiang, Long

    2018-03-01

    Aiming at developing highly efficient photocatalysts by broadening the light-harvesting region and suppressing photo-generated electron-hole recombination simultaneously, this work reports rational design and fabrication of donor-acceptor (D-A) conjugated polymer/TiO2 heterojunction catalyst with strong interfacial interactions by a facile in-situ thermal treatment. To expand the light-harvesting window, soluable conjugated copolymers with D-A architecture are prepared by Pd-mediated polycondensation of diketopyrrolopyrrole (DPP) and t-butoxycarbonyl (t-Boc) modified carbazole (Car), and used as visible-light-harvesting antenna to couple with TiO2 nanocrystals. The DPP-Car/TiO2 composites show wide range absorption in 300-1000 nm. To improve the interfacial binding at the interface, a facile in-situ thermal treatment is carried out to cleave the pendant t-Boc groups in carbazole units and liberate the polar amino groups (-NH-) which strongly bind to the surface of TiO2 through dipole-dipole interactions, forming a heterojunction interface. This in-situ thermal treatment changes the surface elemental distribution of TiO2, reinforces the interface bonding at the boundary of conjugated polymers/TiO2 and finally improves the photocatalytic efficiency of DPP-Car/TiO2 under visible-light irradiation. The interface changes are characterized and verified through Fourier-transform infrared spectroscopy (FT-IR), photo images, UV/Vis (solution state and powder diffuse reflection spectroscopy), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), fluorescence, scanning electron microscopy(SEM) and transmission electron microscopy (TEM) techniques. This study provides a new strategy to avoid the low solubility of D-A conjugated polymers and construct highly-efficient conjugated polymer/TiO2 heterojunction by enforcing the interface contact and facilitating charge or energy transfer for the applications in photocatalysis.

  11. Photo-controllable memristive behavior of graphene/diamond heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Ueda, K.; Aichi, S.; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2016-05-30

    Graphene/diamond (carbon sp{sup 2}-sp{sup 3}) heterojunctions are demonstrated as photo-controllable memristors with photoswitchable multiple resistance states and nonvolatile memory functions. The ratio of conductivity change between the higher and lower resistance states of the junctions was ∼10{sup 3}. The junctions exhibit light wavelength selectivity, and the resistance states can be switched only by blue or violet light irradiation. The mechanism for the change in photoconductivity is considered to be caused by oxidation-reduction of the graphene and/or graphene-diamond (sp{sup 2}-sp{sup 3}) interfaces through the movement of oxygen ions by bias with photo-irradiation because they have wavelength selectivity and require air exposure for several days to exhibit memristive behavior. These results indicate that graphene-diamond, carbon sp{sup 2}-sp{sup 3} heterojunctions can be used as photo-controllable devices with both photomemory and photoswitching functions.

  12. III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

    KAUST Repository

    Mishra, Pawan

    2017-04-01

    Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI transition metal dichalcogenides (TMDs) in the form of MX2 has recently emerged as a novel atomic layered material system with excellent thermoelectric, electronic and optoelectronic properties. Also, the recent investigations reveal that the dissimilar heterojunctions formed by TMDs and III-nitrides provide the route for novel devices in the area of optoelectronic, electronics, and water splitting applications. In addition, integration of III-nitrides and TMDs will enable high density integrated optoelectronic circuits and the development of hybrid integration technologies. In this work, we have demonstrated kinetically controlled growth processes in plasma assisted molecular beam epitaxy (PAMBE) for the III-nitrides and their engineered heterostructures. Techniques such as Ga irradiation and nitrogen plasma exposure has been utilized to implement bulk GaN, InGaN and their heterostructures in PAMBE. For the growth of III-nitride based heterostructures, the in-situ surface stoichiometry monitoring (i-SSM) technique was developed and used for implementing stepped and compositionally graded InGaN-based multiple quantum wells (MQWs). Their optical and microstrain analysis in conjunction with theoretical studies confirmed improvement in the radiative recombination rate of the graded-MQWs as compared to that of stepped-MQWs, owing to the reduced strain in graded-MQWs. Our achievement also includes the realization of the p-type MoS2 by engineering pristine MoS2 layers in PAMBE. Mainly, Ga and nitrogen plasma irradiation on the pristine MoS2 in PAMBE has resulted in the realization of the p-type MoS2. Also, GaN epitaxial thin layers were deposited on MoS2/c-sapphire, WSe2/c-sapphire substrates by PAMBE to study the band

  13. Silicon Nanowire‐Based Devices for Gas-Phase Sensing

    Directory of Open Access Journals (Sweden)

    Anping Cao

    2013-12-01

    Full Text Available Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed.

  14. Homogeneous PCBM layers fabricated by horizontal-dip coating for efficient bilayer heterojunction organic photovoltaic cells.

    Science.gov (United States)

    Huh, Yoon Ho; Bae, In-Gon; Jeon, Hong Goo; Park, Byoungchoo

    2016-10-31

    We herein report a homogeneous [6,6]-phenyl C61 butyric acid methyl ester (PCBM) layer, produced by a solution process of horizontal-dipping (H-dipping) to improve the photovoltaic (PV) effects of bilayer heterojunction organic photovoltaic cells (OPVs) based on a bi-stacked poly(3-hexylthiophene) (P3HT) electron donor layer and a PCBM electron acceptor layer (P3HT/PCBM). It was shown that a homogeneous and uniform coating of PCBM layers in the P3HT/PCBM bilayer OPVs resulted in reliable and reproducible device performance. We recorded a power conversion efficiency (PCE) of 2.89%, which is higher than that (2.00%) of bilayer OPVs with a spin-coated PCBM layer. Moreover, introducing surfactant additives of poly(oxyethylene tridecyl ether) (PTE) into the homogeneous P3HT/PCBM PV layers resulted in the bilayer OPVs showing a PCE value of 3.95%, which is comparable to those of conventional bulk-heterojunction (BHJ) OPVs (3.57-4.13%) fabricated by conventional spin-coating. This improved device performance may be attributed to the selective collection of charge carriers at the interfaces among the active layers and electrodes due to the PTE additives as well as the homogeneous formation of the functional PCBM layer on the P3HT layer. Furthermore, H-dip-coated PCBM layers were deposited onto aligned P3HT layers by a rubbing technique, and the rubbed bilayer OPV exhibited improved in-plane anisotropic PV effects with PCE anisotropy as high as 1.81, which is also higher than that (1.54) of conventional rubbed BHJ OPVs. Our results suggest that the use of the H-dip-coating process in the fabrication of PCBM layers with the PTE interface-engineering additive could be of considerable interest to those seeking to improve PCBM-based opto-electrical organic thin-film devices.

  15. Determination of band offsets at GaN/single-layer MoS2 heterojunction

    KAUST Repository

    Tangi, Malleswararao

    2016-07-25

    We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  16. Determination of band offsets at GaN/single-layer MoS{sub 2} heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Tangi, Malleswararao; Mishra, Pawan; Ng, Tien Khee; Janjua, Bilal; Alias, Mohd Sharizal; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Hedhili, Mohamed Nejib; Anjum, Dalaver H. [Adavanced Nanofabrication Imaging and Characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tseng, Chien-Chih; Shi, Yumeng; Li, Lain-Jong [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Joyce, Hannah J. [Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, Cambridgeshire CB3 0FA (United Kingdom)

    2016-07-18

    We report the band alignment parameters of the GaN/single-layer (SL) MoS{sub 2} heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS{sub 2}/c-sapphire. We confirm that the MoS{sub 2} is an SL by measuring the separation and position of room temperature micro-Raman E{sup 1}{sub 2g} and A{sup 1}{sub g} modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS{sub 2} heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS{sub 2} and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

  17. Charge transport studies in donor-acceptor block copolymer PDPP-TNT and PC71BM based inverted organic photovoltaic devices processed in room conditions

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Shashi B.; Singh, Samarendra P., E-mail: samarendra.singh@snu.edu.in [Department of Physics, Shiv Nadar University, Gautam Buddha Nagar, Uttar Pradesh, India-201307 (India); Sonar, Prashant [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Australia-4001 (Australia)

    2015-07-15

    Diketopyrrolopyrole-naphthalene polymer (PDPP-TNT), a donor-acceptor co-polymer, has shown versatile behavior demonstrating high performances in organic field-effect transistors (OFETs) and organic photovoltaic (OPV) devices. In this paper we report investigation of charge carrier dynamics in PDPP-TNT, and [6,6]-phenyl C{sub 71} butyric acid methyl ester (PC71BM) bulk-heterojunction based inverted OPV devices using current density-voltage (J-V) characteristics, space charge limited current (SCLC) measurements, capacitance-voltage (C-V) characteristics, and impedance spectroscopy (IS). OPV devices in inverted architecture, ITO/ZnO/PDPP-TNT:PC71BM/MoO{sub 3}/Ag, are processed and characterized at room conditions. The power conversion efficiency (PCE) of these devices are measured ∼3.8%, with reasonably good fill-factor 54.6%. The analysis of impedance spectra exhibits electron’s mobility ∼2 × 10{sup −3} cm{sup 2}V{sup −1}s{sup −1}, and lifetime in the range of 0.03-0.23 ms. SCLC measurements give hole mobility of 1.12 × 10{sup −5} cm{sup 2}V{sup −1}s{sup −1}, and electron mobility of 8.7 × 10{sup −4} cm{sup 2}V{sup −1}s{sup −1}.

  18. Efficiency Enhancement of Silicon Heterojunction Solar Cells via Photon Management Using Graphene Quantum Dot as Downconverters

    KAUST Repository

    Tsai, Meng-Lin

    2015-12-16

    By employing graphene quantum dots (GQDs), we have achieved a high efficiency of 16.55% in n-type Si heterojunction solar cells. The efficiency enhancement is based on the photon downconversion phenomenon of GQDs to make more photons absorbed in the depletion region for effective carrier separation, leading to the enhanced photovoltaic effect. The short circuit current and the fill factor are increased from 35.31 to 37.47 mA/cm2 and 70.29% to 72.51%, respectively. The work demonstrated here holds the promise for incorporating graphene-based materials in commercially available solar devices for developing ultra-high efficiency photovoltaic cells in the future.

  19. Flexible diode of polyaniline/ITO heterojunction on PET substrate

    Science.gov (United States)

    Bera, A.; Deb, K.; Kathirvel, V.; Bera, T.; Thapa, R.; Saha, B.

    2017-10-01

    Hybrid organic-inorganic heterojunction between polyaniline and ITO film coated on flexible polyethylene terephthalate (PET) substrate has been prepared through vapor phase polymerization process. Polaron and bipolaron like defect states induced hole transport and exceptional mobility makes polyaniline a noble hole transport layer. Thus a p-n junction has been obtained between the hole transport layer of polyaniline and highly conductive n-type layer of ITO film. The synthesis process was carried out using FeCl3 as polymerizing agent in the oxidative chemical polymerization process. The prepared polyaniline has been found to be crystalline on characterization through X-ray diffraction measurement. X-ray photoelectron spectroscopic measurements were done for compositional analysis of the prepared film. The UV-vis-NIR absorbance spectra obtained for polyaniline shows the characteristics absorbance as observed for highly conductive polyaniline and confirms the occurrence of partially oxidized emeraldine form of polyaniline. The energy band gap of the polyaniline has been obtained as 2.52 eV, by analyzing the optical transmittance spectra. A rectifying behavior has been observed in the electrical J-V plot, which is of great significance in designing polymer based flexible electronic devices.

  20. Efficient Signature Based Malware Detection on Mobile Devices

    Directory of Open Access Journals (Sweden)

    Deepak Venugopal

    2008-01-01

    Full Text Available The threat of malware on mobile devices is gaining attention recently. It is important to provide security solutions to these devices before these threats cause widespread damage. However, mobile devices have severe resource constraints in terms of memory and power. Hence, even though there are well developed techniques for malware detection on the PC domain, it requires considerable effort to adapt these techniques for mobile devices. In this paper, we outline the considerations for malware detection on mobile devices and propose a signature based malware detection method. Specifically, we detail a signature matching algorithm that is well suited for use in mobile device scanning due to its low memory requirements. Additionally, the matching algorithm is shown to have high scanning speed which makes it unobtrusive to users. Our evaluation and comparison study with the well known Clam-AV scanner shows that our solution consumes less than 50% of the memory used by Clam-AV while maintaining a fast scanning rate.

  1. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  2. Switchable Solar Window Devices Based on Polymer Dispersed Liquid Crystals

    Science.gov (United States)

    Murray, Joseph; Ma, Dakang; Munday, Jeremy

    Windows are an interesting target for photovoltaics due to the potential for large area of deployment and because glass is already a ubiquitous component of solar cell devices. Many demonstrations of solar windows in recent years have used photovoltaic devices which are semitransparent in the visible region. Much research has focused on enhancing device absorption in the UV and IR ranges as a means to circumvent the basic tradeoff between efficiency and transparency to visible light. Use of switchable solar window is a less investigated alternative approach; these windows utilize the visible spectrum but can toggle between high transparency and high efficiency as needed. We present a novel switchable solar window device based on Polymer Dispersed Liquid Crystals (PDLC). By applying an electric field to the PDLC layer, the device can be switched from an opaque, light diffusing, efficient photovoltaic cell to a clear, transparent window. In the off state (i.e. scattering state), these devices have the added benefits of increased reflectivity for reduced lighting and cooling costs and haze for privacy. Further, we demonstrate that these windows have the potential for self-powering due to the very low power required to maintain the on, or high transparency, state. Support From: University of Maryland and Maryland Nano-center and its Fablab.

  3. Polythiophene-fullerene based photodetectors: tuning of spectral response and application in photoluminescence based (bio)chemical sensors.

    Science.gov (United States)

    Nalwa, Kanwar S; Cai, Yuankun; Thoeming, Aaron L; Shinar, Joseph; Shinar, Ruth; Chaudhary, Sumit

    2010-10-01

    A photoluminescence (PL)-based oxygen and glucose sensor utilizing inorganic or organic light emitting diode as the light source, and polythiophene: fullerene type bulk-heterojunction devices as photodetectors, for both intensity and decay-time based monitoring of the sensing element's PL. The sensing element is based on the oxygen-sensitive dye Pt-octaethylporphyrin embedded in a polystyrene matrix.

  4. Compound semiconductor materials, devices and circuits

    Science.gov (United States)

    Shealy, J. R.; Eastman, L. F.; Wolf, E. D.; Tasker, P. J.; Krusius, J. P.

    1988-06-01

    This one year research program on compound semiconductor materials growth, devices and circuits has focused on: (1) organometallic vapor phase epitaxy (OMVPE) of GaInP/GaAs and AlInP/GaInP superlattices; (2) enhancement of heterostructure device speed performance via strain layer superlattices and mushroom gates in modulation doped FET's (MODFET's), and inserted tunnel barriers heterojunction bipolar devices (HBT); (3) fabrication and characterization of MODFET devices with gate lengths to 50 nm; (4) self-consistent Monte Carlo transport formulation and its application to small graded heterostructure devices; (5) optical modulation based on the quantum confined Stark effect; and (6) femtosecond spectroscopy of hot carrier processes using the visible Rh6G laser and a new UV BaB2O4 laser.

  5. Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

    Directory of Open Access Journals (Sweden)

    Sang-Won Lee

    2016-01-01

    Full Text Available We propose a solution-processable ultraviolet (UV photodetector with a pn-heterojunction hybrid photoactive layer (HPL that is composed of poly-n-vinylcarbazole (PVK as a p-type polymer and ZnO nanoparticles (NPs as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 103 higher than that of the dark current.

  6. TiO2/Sb2S3/P3HT Based Inorganic-Organic Hybrid Heterojunction Solar Cells with Enhanced Photoelectric Conversion Performance

    Science.gov (United States)

    Zhang, Hongchao; Song, Longfei; Luo, Linqu; Liu, Lei; Wang, Hongen; Wang, Fengyun

    2017-07-01

    Hybrid inorganic-organic heterojunction solar cells (HHSCs) are successfully fabricated using Sb2S3 as a light-absorbing semiconductor, TiO2 nanorods (NRs) as an electron-transport layer, and poly-3 (hexylthiophene) (P3HT) as both a hole conductor and light absorber. The enhanced photo-to-electric conversion performance is expected to (1) enhance optical absorption in the visible light region by Sb2S3 and (2) photo-generate highly efficient charge carrier separation at TiO2/Sb2S3 and Sb2S3/P3HT heterojunction interfaces. The power conversion efficiency (PCE) of HHSCs improves approximately fourfold by inserting the Sb2S3 layer, which can be further enhanced about four more times by optimizing the length of TiO2 nanorod arrays (NRAs). Finally, the mechanism to illustrate the effect of the length of TiO2 NRs on the PCE is discussed. This leads to a theory for achieving high-efficiency inorganic-organic solar cells.

  7. Micro Electromechanical Systems (MEMS Based Microfluidic Devices for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    Nitin Afzulpurkar

    2011-06-01

    Full Text Available Micro Electromechanical Systems (MEMS based microfluidic devices have gained popularity in biomedicine field over the last few years. In this paper, a comprehensive overview of microfluidic devices such as micropumps and microneedles has been presented for biomedical applications. The aim of this paper is to present the major features and issues related to micropumps and microneedles, e.g., working principles, actuation methods, fabrication techniques, construction, performance parameters, failure analysis, testing, safety issues, applications, commercialization issues and future prospects. Based on the actuation mechanisms, the micropumps are classified into two main types, i.e., mechanical and non-mechanical micropumps. Microneedles can be categorized according to their structure, fabrication process, material, overall shape, tip shape, size, array density and application. The presented literature review on micropumps and microneedles will provide comprehensive information for researchers working on design and development of microfluidic devices for biomedical applications.

  8. Energy level alignment at planar organic heterojunctions: influence of contact doping and molecular orientation

    Science.gov (United States)

    Opitz, Andreas

    2017-04-01

    Planar organic heterojunctions are widely used in photovoltaic cells, light-emitting diodes, and bilayer field-effect transistors. The energy level alignment in the devices plays an important role in obtaining the aspired gap arrangement. Additionally, the π-orbital overlap between the involved molecules defines e.g. the charge-separation efficiency in solar cells due to charge-transfer effects. To account for both aspects, direct/inverse photoemission spectroscopy and near edge x-ray absorption fine structure spectroscopy were used to determine the energy level landscape and the molecular orientation at prototypical planar organic heterojunctions. The combined experimental approach results in a comprehensive model for the electronic and morphological characteristics of the interface between the two investigated molecular semiconductors. Following an introduction on heterojunctions used in devices and on energy levels of organic materials, the energy level alignment of planar organic heterojunctions will be discussed. The observed energy landscape is always determined by the individual arrangement between the energy levels of the molecules and the work function of the electrode. This might result in contact doping due to Fermi level pinning at the electrode for donor/acceptor heterojunctions, which also improves the solar cell efficiency. This pinning behaviour can be observed across an unpinned interlayer and results in charge accumulation at the donor/acceptor interface, depending on the transport levels of the respective organic semiconductors. Moreover, molecular orientation will affect the energy levels because of the anisotropy in ionisation energy and electron affinity and is influenced by the structural compatibility of the involved molecules at the heterojunction. High structural compatibility leads to π-orbital stacking between different molecules at a heterojunction, which is of additional interest for photovoltaic active interfaces and for ground

  9. Mini array of quantum Hall devices based on epitaxial graphene

    Energy Technology Data Exchange (ETDEWEB)

    Novikov, S.; Lebedeva, N. [Department of Micro and Nanosciences, Aalto University, Micronova, Tietotie 3, Espoo (Finland); Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, 02044 VTT (Finland)

    2016-05-07

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.

  10. Device-independent bit commitment based on the CHSH inequality

    Science.gov (United States)

    Aharon, N.; Massar, S.; Pironio, S.; Silman, J.

    2016-02-01

    Bit commitment and coin flipping occupy a unique place in the device-independent landscape, as the only device-independent protocols thus far suggested for these tasks are reliant on tripartite GHZ correlations. Indeed, we know of no other bipartite tasks, which admit a device-independent formulation, but which are not known to be implementable using only bipartite nonlocality. Another interesting feature of these protocols is that the pseudo-telepathic nature of GHZ correlations—in contrast to the generally statistical character of nonlocal correlations, such as those arising in the violation of the CHSH inequality—is essential to their formulation and analysis. In this work, we present a device-independent bit commitment protocol based on CHSH testing, which achieves the same security as the optimal GHZ-based protocol, albeit at the price of fixing the time at which Alice reveals her commitment. The protocol is analyzed in the most general settings, where the devices are used repeatedly and may have long-term quantum memory. We also recast the protocol in a post-quantum setting where both honest and dishonest parties are restricted only by the impossibility of signaling, and find that overall the supra-quantum structure allows for greater security.

  11. Unsymmetrical donor–acceptor–donor–acceptor type indoline based organic semiconductors with benzothiadiazole cores for solution-processed bulk heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Wenqin Li

    2017-10-01

    Full Text Available Bulk heterojunction (BHJ solar cells based on small molecules have attracted potential attention due to their promise of conveniently defined structures, high absorption coefficients, solution process-ability and easy fabrication. Three D–A–D–A type organic semiconductors (WS-31, WS-32 and WS-52 are synthesized, based on the indoline donor and benzotriazole auxiliary acceptor core, along with either bare thiophene or rigid cyclopentadithiophene as π bridge, rhodanine or carbonocyanidate as end-group. Their HOMO orbitals are delocalized throughout the whole molecules. Whereas the LUMOs are mainly localized on the acceptor part of structure, which reach up to benzothiadiazole, but no distribution on indoline donor. The first excitations for WS-31 and WS-32 are mainly originated by electron transition from HOMO to LUMO level, while for WS-52, partly related to transition between HOMO and LUMO+1 level. The small organic molecules are applied as donor components in bulk heterojunction (BHJ organic solar cells, using PC61BM as acceptor material to check their photovoltaic performances. The BHJ solar cells based on blended layer of WS-31:PC61BM and WS-32:PC61BM processed with chloroform show overall photoelectric conversion efficiency (PCE of 0.56% and 1.02%, respectively. WS-32 based BHJ solar cells show a higher current density originated by its relatively larger driving force of photo-induced carrier in photo-active layer to LUMO of PC61BM. Keywords: Indoline donor, Unsymmetrical organic semiconductors, BHJ solar cells, Photovoltaic performances

  12. Study of stacked-emitter layer for high efficiency amorphous/crystalline silicon heterojunction solar cells

    Science.gov (United States)

    Lee, Youngseok; Kim, Heewon; Iftiquar, S. M.; Kim, Sunbo; Kim, Sangho; Ahn, Shihyun; Lee, Youn-Jung; Dao, Vinh Ai; Yi, Junsin

    2014-12-01

    A modified emitter, of stacked two layer structure, was investigated for high-efficiency amorphous/crystalline silicon heterojunction (HJ) solar cells. Surface area of the cells was 181.5 cm2. The emitter was designed to achieve a high open circuit voltage (Voc) and fill factor (FF). When doping of the emitter layer was increased, it was observed that the silicon dihydride related structural defects within the films increased, and the Voc of the HJ cell decreased. On the other hand, while the doping concentration of the emitter was reduced the FF of the cell reduced. Therefore, a combination of a high conductivity and low defects of a single emitter layer appears difficult to obtain, yet becomes necessary to improve the cell performance. So, we investigated a stacked-emitter with low-doped/high-doped double layer structure. A low-doped emitter with reduced defect density was deposited over the intrinsic hydrogenated amorphous silicon passivation layer, while the high-doped emitter with high conductivity was deposited over the low-doped emitter. The effects of doping and defect density of the emitter, on the device performance, were elucidated by using computer simulation and an optimized device structure was formulated. The simulation was performed with the help of Automat for the Simulation of Heterostructures simulation software. Finally, based on the simulation results, amorphous/crystalline heterojunction silicon solar cells were optimized by reducing density of defect states in the stacked-emitter structure and we obtained 725 mV, 77.41%, and 19.0% as the open-circuit voltage, fill factor, and photo-voltaic conversion efficiency of the device, respectively.

  13. Broadband illusion optical devices based on conformal mappings

    Science.gov (United States)

    Xiong, Zhan; Xu, Lin; Xu, Ya-Dong; Chen, Huan-Yang

    2017-10-01

    In this paper, we propose a simple method of illusion optics based on conformal mappings. By carefully developing designs with specific conformal mappings, one can make an object look like another with a significantly different shape. In addition, the illusion optical devices can work in a broadband of frequencies.

  14. In plane optical sensor based on organic electronic devices

    NARCIS (Netherlands)

    Koetse, M.M; Rensing, P.A.; Heck, G.T. van; Sharpe, R.B.A.; Allard, B.A.M.; Wieringa, F.P.; Kruijt, P.G.M.; Meulendijks, N.M.M.; Jansen, H.; Schoo, H.F.M.

    2008-01-01

    Sensors based on organic electronic devices are emerging in a wide range of application areas. Here we present a sensor platform using organic light emitting diodes (OLED) and organic photodiodes (OPD) as active components. By means of lamination and interconnection technology the functional foils

  15. Single polymer-based ternary electronic memory material and device.

    Science.gov (United States)

    Liu, Shu-Juan; Wang, Peng; Zhao, Qiang; Yang, Hui-Ying; Wong, Jenlt; Sun, Hui-Bin; Dong, Xiao-Chen; Lin, Wen-Peng; Huang, Wei

    2012-06-05

    A ternary polymer memory device based on a single polymer with on-chain Ir(III) complexes is fabricated by combining multiple memory mechanisms into one system. Excellent ternary memory performances-low reading, writing, and erasing voltages and good stability for all three states-are achieved. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Dynamical Properties of QD-based Nanolaser Devices

    DEFF Research Database (Denmark)

    Lorke, Michael; Nielsen, Torben Roland; Mørk, Jesper

    2011-01-01

    We investigate the switch-on behavior of semiconductor QD-based nanocavity laser devices. From a microscopic treatment of the carrier-carrier and carrier-photon interaction, we find a fast switch-on, that is accompanied by heavily damped relaxation oscillations and caused by an ultrafast carrier...

  17. Rapid development of paper-based fluidic diagnostic devices

    CSIR Research Space (South Africa)

    Smith, S

    2014-11-01

    Full Text Available DEVELOPMENT OF PAPER-BASED FLUIDIC DIAGNOSTIC DEVICES S. Smith1*, H. Chen2, K. Moodley3, T. Joubert4 & K. Land5 1-5Department of Materials Science and Manufacturing Council for Scientific and Industrial Research, South Africa 1ssmith@csir.co.za,2jchen...

  18. Silicon nanowire-based devices for gas-phase sensing

    NARCIS (Netherlands)

    Cao, A.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of

  19. Electron and Hole Transport Layers: Their Use in Inverted Bulk Heterojunction Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Sandro Lattante

    2014-03-01

    Full Text Available Bulk heterojunction polymer solar cells (BHJ PSCs are very promising organic-based devices for low-cost solar energy conversion, compatible with roll-to-roll or general printing methods for mass production. Nevertheless, to date, many issues should still be addressed, one of these being the poor stability in ambient conditions. One elegant way to overcome such an issue is the so-called “inverted” BHJ PSC, a device geometry in which the charge collection is reverted in comparison with the standard geometry device, i.e., the electrons are collected by the bottom electrode and the holes by the top electrode (in contact with air. This reverted geometry allows one to use a high work function top metal electrode, like silver or gold (thus avoiding its fast oxidation and degradation, and eliminates the need of a polymeric hole transport layer, typically of an acidic nature, on top of the transparent metal oxide bottom electrode. Moreover, this geometry is fully compatible with standard roll-to-roll manufacturing in air and is less demanding for a good post-production encapsulation process. To date, the external power conversion efficiencies of the inverted devices are generally comparable to their standard analogues, once both the electron transport layer and the hole transport layer are fully optimized for the particular device. Here, the most recent results on this particular optimization process will be reviewed, and a general outlook regarding the inverted BHJ PSC will be depicted.

  20. Heterojunction PbS Nanocrystal Solar Cells with Oxide Charge-Transport Layers

    KAUST Repository

    Hyun, Byung-Ryool

    2013-12-23

    Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Roomerature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures. © 2013 American Chemical Society.

  1. Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor

    OpenAIRE

    Manjula Vijh; R.S. Gupta; Sujata Pandey

    2017-01-01

    Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor. This device, due to its varied advantages, is considered in applications where devices are scaled down to deep sub-micron level. Like MOSFETs, many geometries of TFETs have been studied and analyzed in the past few years. This work, presents a two dimensional analytical model for a III-V Heterojunction ...

  2. Field-Based Experiential Learning Using Mobile Devices

    Science.gov (United States)

    Hilley, G. E.

    2015-12-01

    Technologies such as GPS and cellular triangulation allow location-specific content to be delivered by mobile devices, but no mechanism currently exists to associate content shared between locations in a way that guarantees the delivery of coherent and non-redundant information at every location. Thus, experiential learning via mobile devices must currently take place along a predefined path, as in the case of a self-guided tour. I developed a mobile-device-based system that allows a person to move through a space along a path of their choosing, while receiving information in a way that guarantees delivery of appropriate background and location-specific information without producing redundancy of content between locations. This is accomplished by coupling content to knowledge-concept tags that are noted as fulfilled when users take prescribed actions. Similarly, the presentation of the content is related to the fulfillment of these knowledge-concept tags through logic statements that control the presentation. Content delivery is triggered by mobile-device geolocation including GPS/cellular navigation, and sensing of low-power Bluetooth proximity beacons. Together, these features implement a process that guarantees a coherent, non-redundant educational experience throughout a space, regardless of a learner's chosen path. The app that runs on the mobile device works in tandem with a server-side database and file-serving system that can be configured through a web-based GUI, and so content creators can easily populate and configure content with the system. Once the database has been updated, the new content is immediately available to the mobile devices when they arrive at the location at which content is required. Such a system serves as a platform for the development of field-based geoscience educational experiences, in which students can organically learn about core concepts at particular locations while individually exploring a space.

  3. Pattern recognition with TiOx-based memristive devices

    Directory of Open Access Journals (Sweden)

    Finn Zahari

    2015-07-01

    Full Text Available We report on the development of TiOx-based memristive devices for bio-inspired neuromorphic systems. In particular, capacitor like structures of Al/AlOx/TiOx/Al with, respectively 20 nm and 50 nm thick TiOx-layers were fabricated and analyzed in terms of their use in neural network circuits. Therefore, an equivalent circuit model is presented which mimics the observed device properties on a qualitative level and relies on mobile oxygen ions by taking electronic transport through local conducting filaments and hopping between TiOx defect states into account. The model also comprises back diffusion of oxygen ions and allows for a realistic description of the experimental recorded device characteristics. The in Refs. [1-3] reported computing paradigms for pattern recognition have been used as guidelines for a device performance investigation at the network level. In particular, simulations of a spiking neural network are presented which allows for pattern recognition. As input patterns hand written digits taken from the MNIST Data base have been used. Within the network the memristive devices are arranged in a cross-bar array connected by 196 input neurons and ten output neurons. While, each input neuron corresponds to a specific pixel of the image of the input pattern, the output neurons were implemented as spiking neurons. In addition, the output neurons were inhibitory linked within an winner-take-it-all network and consist of a homeostasis-like behavior for their spiking thresholds. Based on the network simulation essential requirements for the development of optimal memristive device for neuromorphic circuits are discussed.

  4. Electrocaloric devices based on thini-film heat switches

    Energy Technology Data Exchange (ETDEWEB)

    Epstein, Richard I [Los Alamos National Laboratory; Malloy, Kevin J [UNM

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  5. Erlang-Based Sensor Network Management For Heterogeneous Devices

    Directory of Open Access Journals (Sweden)

    Michal Niec

    2012-01-01

    Full Text Available The paper describes a system designed to manage and collect data from the network of heterogeneous sensors. It was implemented using Erlang OTP and CouchDB for maximum fault tolerance, scalability and ease of deployment. It is resistant to poor network quality, shows high tolerance for software errors and power failures, operates on flexible data model. Additionally, it is available to users through an Web application, which shows just how easy it is to use the server HTTP API to communicate with it. The whole platform was implemented and tested on variety of devices like PC, Mac, ARM-based embedded devices and Android tablets.

  6. Multi-Device to Multi-Device (MD2MD Content-Centric Networking Based on Multi-RAT Device

    Directory of Open Access Journals (Sweden)

    Cheolhoon Kim

    2017-11-01

    Full Text Available This paper proposes a method whereby a device can transmit and receive information using a beacon, and also describes application scenarios for the proposed method. In a multi-device to multi-device (MD2MD content-centric networking (CCN environment, the main issue involves searching for and connecting to nearby devices. However, if a device can’t find another device that satisfies its requirements, the connection is delayed due to the repetition of processes. It is possible to rapidly connect to a device without repetition through the selection of the optimal device using the proposed method. Consequently, the proposed method and scenarios are advantageous in that they enable efficient content identification and delivery in a content-centric Internet of Things (IoT environment, in which multiple mobile devices coexist.

  7. A novel LED-based device for occlusal caries detection.

    Science.gov (United States)

    Aktan, Ali Murat; Cebe, Mehmet Ata; Ciftçi, Mehmet Ertuğrul; Sirin Karaarslan, Emine

    2012-11-01

    The aim of this in-vitro study was to compare the performance of laser-based (DIAGNOdent, KaVo, Biberach, Germany) and LED-based (Midwest Caries I.D., DENTSPLY Professional, New York, USA) caries detectors in the detection of occlusal caries in permanent molars. The study consisted of 129 visually sound or non-cavitated pits or fissures in 82 extracted permanent human molar teeth. Two trained examiners used the laser-based and LED-based caries detectors to examine the fissures for caries. The teeth were then sectioned at the surfaces suspected of containing occlusal caries and histologically evaluated using stereomicroscopy as a gold standard. Inter-examiner reliability of the caries detector examination was assessed using Cohen's Kappa statistics. The sensitivity, specificity, and accuracy in diagnosing occlusal caries using the two devices were calculated according to appropriate cut-off scores. Receiver operating characteristic (ROC) curves were also determined to compare the diagnostic performance of the devices in occlusal caries diagnosis. The cut-off level of significance was taken as p = 0.005. Cohen's Kappa showed substantial agreement for the laser-based caries detector (0.74), and almost perfect agreement for the LED-based (0.89) caries detector. The specificity of the laser-based device varied from 0.49 to 0.97 at T1 and T2. Its sensitivity varied from 0.33 to 0.65 at T1 and T2. The specificity of the LED-based device varied from 0.48 to 0.56 at T1 and T2. Its sensitivity varied from 0.65 to 0.84 at T1 and from 0.80 to 0.84 at T2. Taking the limitations of the current study into consideration, the DIAGNOdent laser pen was more accurate in determining when teeth were free of occlusal caries than was the Midwest Caries I.D. LED-based device, although the Midwest Caries I.D. device more often revealed the presence of occlusal caries than did the DIAGNOdent pen.

  8. New memory devices based on the proton transfer process

    Science.gov (United States)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  9. Heuristic Based Approach for Voltage Stability Improvement using FACTS Devices

    Directory of Open Access Journals (Sweden)

    Hajer Jmii

    2017-12-01

    Full Text Available The aim of this paper is to develop a hybrid device for voltage stability enhancement using two kinds of FACTS (Flexible AC Transmission System namely SVC (Static Var Compensator and TCSC (Thyristor Controlled Series Capacitor. The idea behind the proposed method is to maintain safe and satisfactory power system operation in a lesser costing manner by taking advantage of the performances of SVC and TCSC at the same time. We propose to evaluate the efficacy of the combined device to UPFC, as it is a hybrid FACTS and it is the most versatile compensator. For purpose of identifying the placement of the devices, we opt for a heuristic based approach. The methodology is tested with the IEEE 14-Bus system using the software EUROSTAG, and the simulation results reveal the efficiency of the proposed method for enhancing voltage stability.

  10. Second Law based definition of passivity/activity of devices

    Science.gov (United States)

    Sundqvist, Kyle M.; Ferry, David K.; Kish, Laszlo B.

    2017-10-01

    Recently, our efforts to clarify the old question, if a memristor is a passive or active device [1], triggered debates between engineers, who have had advanced definitions of passivity/activity of devices, and physicists with significantly different views about this seemingly simple question. This debate triggered our efforts to test the well-known engineering concepts about passivity/activity in a deeper way, challenging them by statistical physics. It is shown that the advanced engineering definition of passivity/activity of devices is self-contradictory when a thermodynamical system executing Johnson-Nyquist noise is present. A new, statistical physical, self-consistent definition based on the Second Law of Thermodynamics is introduced. It is also shown that, in a system with uniform temperature distribution, any rectifier circuitry that can rectify thermal noise must contain an active circuit element, according to both the engineering and statistical physical definitions.

  11. A triple quantum dot based nano-electromechanical memory device

    Energy Technology Data Exchange (ETDEWEB)

    Pozner, R.; Lifshitz, E. [Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Peskin, U., E-mail: uri@tx.technion.ac.il [Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Lise Meitner Center for Computational Quantum Chemistry, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  12. Proton irradiation of liquid crystal based adaptive optical devices

    Energy Technology Data Exchange (ETDEWEB)

    Buis, E.J., E-mail: ernst-jan.buis@tno.nl [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Berkhout, G.C.G. [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden (Netherlands); Love, G.D.; Kirby, A.K.; Taylor, J.M. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Hannemann, S.; Collon, M.J. [cosine Research BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands)

    2012-01-01

    To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10{sup 10}p/cm{sup 2}). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

  13. Dual pitch plasmonic devices for polarization enhanced colour based sensing

    Science.gov (United States)

    Langley, D.; Balaur, E.; Sadatnajafi, C.; Abbey, B.

    2016-12-01

    Plasmonic devices provide a unique sensitivity to changes in the permittivity of the immediate, near-surface environment. In this work we explore the use of dual pitch plasmonic devices combined with microfluidics for polarization enhanced colour sensing of a chemicals' refractive index. We demonstrate that the use of cross-shaped apertures can produce polarization tunable color based sensing in the optical regime and show that the spectral variations as a function of the incident polarization can be decomposed into contributions from the two orthogonal modes that characterize the dual pitch plasmonic device. Finally we demonstrate that the use of the full colour spectrum in the visible range in combination with polarization control enables sensing `by-eye' of refractive index changes below 1 × 10-3 RIU.

  14. Nanotechnology based devices and applications in medicine: An overview

    Directory of Open Access Journals (Sweden)

    Elvis A Martis

    2012-01-01

    Full Text Available Nanotechnology has been the most explored and extensively studied area in recent times. Many devices which were earlier impossible to imagine, are being developed at a lightning speed with the application of nanotechnology. To overcome the challenges offered by the most dreaded diseases, such as cancer or any disease involving the central nervous system or other inaccessible areas of the human body, nanotechnology has been proved to be a boon in making the treatment more target specific and minimizing the toxicities. This review describes a handful of important devices and applications based on nanotechnology in medicine made in recent times. This article also describes in brief the regulatory concerns and the ethical issues pertaining to nanomedical devices.

  15. Carbon-Nanotube-Based Thermoelectric Materials and Devices

    Energy Technology Data Exchange (ETDEWEB)

    Blackburn, Jeffrey L. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Ferguson, Andrew J. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Cho, Chungyeon [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA; Grunlan, Jaime C. [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA

    2018-01-22

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.

  16. Carbon-Nanotube-Based Thermoelectric Materials and Devices.

    Science.gov (United States)

    Blackburn, Jeffrey L; Ferguson, Andrew J; Cho, Chungyeon; Grunlan, Jaime C

    2018-01-22

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g -1 ) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Fabrication and characterization of heterojunction transistors

    Science.gov (United States)

    Lo, Chien-Fong

    2011-12-01

    Submircon emitter finger high-speed double heterojunction InAlAs/InGaAsSb/InGaAs bipolar transistors (DHBTs) and a variety of nitride high electron mobility transistors (HEMTs) including AlGaN/GaN, InAlN/GaN, and AlN/GaN were fabricated and characterized. DHBT structures were grown by solid source molecular beam epitaxy (SSMBE) on Fe-doped semiinsulating InP substrates and nitride HEMTs were grown with a metal organic chemical vapor deposition (MOCVD) system on sapphire or SiC substrates. AlN/GaN HEMTs were grown with a RF-VMBE on sapphire substrates. Ultra low base contact resistance of 3.7 x 10-7 ohm-cm2 after 1 min 250¢XC thermal treatment on noval InGaAsSb base of DHBTs was achieved and a long-term thermal stability of base metallization was studied. Regarding small scale DHBT fabrication, tri-layer system was introduced to improve the resolution for submicron emitter patterning and help to pile up a thicker emitter metal stack; guard-ring technique was applied around the emitter periphery in order to preserve the current gain at small emitter dimensions. Ultra low turn-on voltage and high current gain can be realized with InGaAsSb-base DHBTs as compared to the conventional InGaAs-base DHBTs. A peak current gain cutoff frequency (fT) of 268 GHz and power gain cutoff frequency (fmax) of 485 GHz were achieved. GaN-based HEMTs herein were fabricated with gate lengths from 400 nm to 1im, and were deposited Ti/Al/Ni/Au as their Ohmic contact metallization. Effects of the Ohmic contact annealing for lattice-matched InAlN/GaN HEMTs with and without a thin GaN cap layer were exhibited and their optimal annealing temperature were obtained. A maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm were demonstrated for InAlN/GaN HEMTs with the shortest gate length. A unity-gain cutoff frequency (fT) of 69 GHz and a maximum frequency of oscillation (fmax) of 80 GHz for InAlN/GaN HEMTs were extracted from measured scattering parameters

  18. Efficient inverted bulk-heterojunction polymer solar cells with self-assembled monolayer modified zinc oxide.

    Science.gov (United States)

    Kim, Wook Hyun; Lyu, Hong-Kun; Han, Yoon Soo; Woo, Sungho

    2013-10-01

    The performance of poly(3-hexylthiophen) (P3HT) and [6, 6]phenyl C61 butyric acid methyl ester ([60]PCBM)-based inverted bulk-heterojunction (BHJ) polymer solar cells (PSCs) is enhanced by the modification of zinc oxide (ZnO)/BHJ interface with carboxylic-acid-functionalized self-assembled monolayers (SAMs). Under simulated solar illumination of AM 1.5 (100 mW/cm2), the inverted devices fabricated with SAM-modified ZnO achieved an enhanced power conversion efficiency (PCE) of 3.34% due to the increased fill factor and photocurrent density as compared to unmodified cells with PCE of 2.60%. This result provides an efficient method for interface engineering in inverted BHJ PSCs.

  19. Evaluation of characteristics on the bulk heterojunction solar cells prepared by PCDTBT: PC71BM composite thin film

    Science.gov (United States)

    Ito, Masakazu; Santhakumar, Kannappan; Kumar, Palanisamy; Kojima, Kenzo; Shin, Paik-Kyun; Ochiai, Shizuyasu

    2012-09-01

    Bulk heterojunction (BHJ) solar cells based on blends comprising conjugated polymers and fullerene acceptors are the subject of considerable investigation because of their potential to enable the fabrication of low-cost devices that convert sunlight into electricity. Recently, poly(2,7-carbazole) derivatives have gained momentum as a class of promising alternative materials to poly(3-hexylthiophene) (P3HT) in organic solar cell applications. Among them, poly[N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzo thiadiazole)] (PCDTBT) has a relatively deeper highest occupied molecular orbital (HOMO) of 5.45 eV compared to the HOMO of 5.1 eV of the P3HT. In this work we systematically study the effect of donor and acceptor ratio on the device performance of bulk heterojunction solar cells made with blends of PCDTBT and PC71BM. We used PEDOT: PSS as a hole transport layer, and TiOX as a hole-blocking layer in order to improve the power conversion efficiency. The current density-voltage (JV) characteristics of photovoltaic cells were measured under the illumination of simulated solar light with 100 mW/cm2 (AM 1.5G) by an Oriel 1000 W solar simulator. The power conversion efficiency of the solar cell is more than 5%.

  20. Self-Organization Schemes towards Thermodynamic Stable Bulk Heterojunction Morphologies: A Perspective on Future Fabrication Strategies of Polymer Photovoltaic Architectures

    Directory of Open Access Journals (Sweden)

    A. Benmouna

    2013-01-01

    Full Text Available Research efforts to improve our understanding of electronic polymers are developing fast because of their promising advantages over silicon in photovoltaic solar cells. A major challenge in the development of polymer photovoltaic devices is the viable fabrication strategies of stable bulk heterojunction architecture that will retain functionality during the expected lifetime of the device. Block copolymer self-assembly strategies have attracted particular attention as a scalable means toward thermodynamically stable microstructures that combine the ideal geometrical characteristics of a bulk heterojunction with the fortuitous combination of properties of the constituent blocks. Two primary routes that have been proposed in the literature involve the coassembly of block copolymers in which one domain is a hole conductor with the electron-conducting filler (such as fullerene derivatives or the self-assembly of block copolymers in which the respective blocks function as hole and electron conductor. Either way has proven difficult because of the combination of synthetic challenges as well as the missing understanding of the complex governing parameters that control structure formation in semiconducting block copolymer blends. This paper summarizes important findings relating to structure formation of block copolymer and block copolymer/nanoparticle blend assembly that should provide a foundation for the future design of block copolymer-based photovoltaic systems.

  1. Fabrication and characterization of PZT string based MEMS devices

    Directory of Open Access Journals (Sweden)

    D.T. Huong Giang

    2016-06-01

    Full Text Available String based MEMS devices recently attract world technology development thanks to their advantages over cantilever ones. Approaching to this direction, the paper reports on the micro-fabrication and characterization of free-standing doubly clamped piezoelectric beams based on heterostructures of Pd/FeNi/Pd/PZT/LSMO/STO/Si. The displacement of strings is investigated in both static and dynamic mode. The static response exhibits a bending displacement as large as 1.2 μm, whereas the dynamic response shows a strong resonance with a high quality factor of around 35 depending on the resonant mode at atmospheric pressure. These findings are comparable with those observed in large dimension membrane and cantilever based MEMS devices, which exhibit high potentials in variety of sensor and resonant actuator applications.

  2. Highly efficient and thickness-tolerable bulk heterojunction polymer solar cells based on P3HT donor and a low-bandgap non-fullerene acceptor

    Science.gov (United States)

    Liu, Xiaodong; Li, Yongxi; Huang, Peng; Zhou, Yi; Jiang, Zuo-Quan; Song, Bo; Li, Yongfang; Liao, Liang-Sheng; Zheng, Yonghao

    2017-10-01

    In order to fabricate highly efficient polymer solar cells (PSCs) in industrial scale, one of the key issues is to use thick active layer (>200 nm) in the device module without sacrificing the power conversion efficiency (PCE). In this article, we have studied the blend of the medium-bandgap polymeric donor P3HT and the low-bandgap acceptor IDTIDT-IC as the active layer in non-fullerene PSCs, and successfully maintained the device performance with the thickness of the active layer close to 250 nm. The P3HT:IDTIDT-IC based PSCs with simple thermal annealing exhibits a PCE of 3.49% at a thin active layer, 74 nm. More importantly, the PCE remains almost constant with increasing the thickness of the active layer, and reaches a peak value of 3.64% at 236 nm. This thickness-insensitive photovoltaic performance of the P3HT:IDTIDT-IC system makes them compatible with large-scale roll-to-roll processing. Furthermore, the P3HT:IDTIDT-IC devices show a very high tolerance to temperature, and the PCE keeps nearly unchanged after annealing the active layer at 150 °C for 75 min. All in all, our results show that thickness-tolerable and thermal-stable P3HT:IDTIDT-IC system is more suitable for large-scale industrial manufacturing than the classic P3HT:PCBM formula.

  3. Parametric optimization of optical devices based on strong photonic localization

    Science.gov (United States)

    Gui, Minmin; Yang, Xiangbo

    2017-07-01

    Symmetric two-segment-connected triangular defect waveguide networks (STSCTDWNs) can produce strong photonic localization, which is useful for designing highly efficient energy storage devices, high power superluminescent light emitting diodes, all-optical switches, and more. Although STSCTDWNs have been studied in previous works, in this paper we systematically optimize the parameters of STSCTDWNs to further enhance photonic localization so that the function of optical devices based on strong photonic localization can be improved. When optimizing the parameters, we find a linear relationship between the logarithm of photonic localization and the broken degree of networks. Furthermore, the slope and intercept of the linear relationship are larger than previous results. This means that the increasing speed of photonic localization is improved. The largest intensity of photonic localizations can reach 1036, which is 16 orders of magnitude larger than previous reported results. These optimized networks provide practical solutions for all optical devices based on strong photonic localization in the low frequency range, such as nanostructured devices.

  4. In plane optical sensor based on organic electronic devices

    Science.gov (United States)

    Koetse, Marc; Rensing, Peter; van Heck, Gert; Sharpe, Ruben; Allard, Bart; Wieringa, Fokko; Kruijt, Peter; Meulendijks, Nicole; Jansen, Henk; Schoo, Herman

    2008-08-01

    Sensors based on organic electronic devices are emerging in a wide range of application areas. Here we present a sensor platform using organic light emitting diodes (OLED) and organic photodiodes (OPD) as active components. By means of lamination and interconnection technology the functional foils with OLED and OPD arrays form an in-plane optical sensor platform (IPOS). This platform can be extended with a wireless data and signal processing unit yielding a sensor node. The focus of our research is to engage the node in a healthcare application, in which a bandage is able to monitor the vital signs of a person, a so-called Smart Bandage. One of the principles that is described here is based on measuring the absorption modulation of blood volume induced by the pulse (photoplethysmography). The information from such a bandage could be used to monitor wound healing by measuring the perfusion in the skin. The OLED and OPD devices are manufactured on separate foils and glass substrates by means of printing and coating technologies. Furthermore, the modular approach allows for the application of the optical sensing unit in a variety of other fields including chemical sensing. This, ultimately enables the measurement of a large variety of physiological parameters using the same bandage and the same basic sensor architecture. Here we discuss the build-up of our device in general terms. Specific characteristics of the used OLEDs and OPDs are shown and finally we demonstrate the functionality by simultaneously recorded photoplethysmograms of our device and a clinical pulseoximeter.

  5. A new JPEG-based steganographic algorithm for mobile devices

    Science.gov (United States)

    Agaian, Sos S.; Cherukuri, Ravindranath C.; Schneider, Erik C.; White, Gregory B.

    2006-05-01

    Currently, cellular phones constitute a significant portion of the global telecommunications market. Modern cellular phones offer sophisticated features such as Internet access, on-board cameras, and expandable memory which provide these devices with excellent multimedia capabilities. Because of the high volume of cellular traffic, as well as the ability of these devices to transmit nearly all forms of data. The need for an increased level of security in wireless communications is becoming a growing concern. Steganography could provide a solution to this important problem. In this article, we present a new algorithm for JPEG-compressed images which is applicable to mobile platforms. This algorithm embeds sensitive information into quantized discrete cosine transform coefficients obtained from the cover JPEG. These coefficients are rearranged based on certain statistical properties and the inherent processing and memory constraints of mobile devices. Based on the energy variation and block characteristics of the cover image, the sensitive data is hidden by using a switching embedding technique proposed in this article. The proposed system offers high capacity while simultaneously withstanding visual and statistical attacks. Based on simulation results, the proposed method demonstrates an improved retention of first-order statistics when compared to existing JPEG-based steganographic algorithms, while maintaining a capacity which is comparable to F5 for certain cover images.

  6. Novel Opportunistic Network Routing Based on Social Rank for Device-to-Device Communication

    Directory of Open Access Journals (Sweden)

    Tong Wang

    2017-01-01

    Full Text Available In recent years, there has been dramatic proliferation of research concerned with fifth-generation (5G mobile communication networks, among which device-to-device (D2D communication is one of the key technologies. Due to the intermittent connection of nodes, the D2D network topology may be disconnected frequently, which will lead to failure in transmission of large data files. In opportunistic networks, in case of encountering nodes which never meet before a flood message blindly to cause tremendous network overhead, a novel opportunistic network routing protocol based on social rank and intermeeting time (SRIT is proposed in this paper. An improved utility approach applied in utility replication based on encounter durations and intermeeting time is put forward to enhance the routing efficiency. Meanwhile, in order to select better candidate nodes in the network, a social graph among people is established when they socially relate to each other in social rank replication. The results under the scenario show an advantage of the proposed opportunistic network routing based on social rank and intermeeting time (SRIT over the compared algorithms in terms of delivery ratio, average delivery latency, and overhead ratio.

  7. The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Baturay, Silan [Department of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir (Turkey); Ocak, Yusuf Selim, E-mail: yusufselim@gmail.com [Department of Science, Faculty of Education, Dicle University, 21280 Diyarbakir (Turkey); Science and Technology Application and Research Center, Dicle University, 21280 Diyarbakir (Turkey); Kaya, Derya [Department of Physics, Institute of Natural Applied Sciences, Dicle University, 21280 Diyarbakir (Turkey)

    2015-10-05

    Highlights: • Undoped and Gd doped ZnO thin films were deposited onto p-Si semiconductor. • The Gd:ZnO/p-Si heterojunctions were compared with undoped ZnO/p-Si heterojunction. • A strong effect of Gd doping on the performance of the devices were reported. - Abstract: Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I–V measurements of the 1% Gd-doped ZnO/p-Si heterojunction exhibited the strongest response to light.

  8. Electrochromic device based on electrospun WO{sub 3} nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Dulgerbaki, Cigdem; Maslakci, Neslihan Nohut; Komur, Ali Ihsan; Oksuz, Aysegul Uygun, E-mail: ayseguluygun@sdu.edu.tr

    2015-12-15

    Highlights: • WO{sub 3} electrochromic nanofibers were prepared by electrospinning technique. • WO{sub 3} nanofibers switched reversibly from transparent to blue color. • Electrochromic device was assembled using ionic liquid based gel electrolyte. • Significant optical modulation and excellent cycling stability were achieved for ECD. - Abstract: The tungsten oxide (WO{sub 3}) nanofibers were grown directly onto an ITO-coated glass via an electrospinning method for electrochromic applications. The electrochromic properties of WO{sub 3} nanofibers were investigated in the presence of different electrolytes including a series of ionic liquids and classic LiClO{sub 4}-PC system. A significant optical modulation of 20.82% at 760 nm, reversible coloration with efficiency of 64.58 cm{sup 2}/C and excellent cycling stability were achieved for the nanofiber electrochromic device (ECD) with ionic liquid based gel electrolyte.

  9. The Biological Responses to Magnesium-Based Biodegradable Medical Devices

    Directory of Open Access Journals (Sweden)

    Lumei Liu

    2017-11-01

    Full Text Available The biocompatibility of Magnesium-based materials (MBMs is critical to the safety of biodegradable medical devices. As a promising metallic biomaterial for medical devices, the issue of greatest concern is devices’ safety as degrading products are possibly interacting with local tissue during complete degradation. The aim of this review is to summarize the biological responses to MBMs at the cellular/molecular level, including cell adhesion, transportation signaling, immune response, and tissue growth during the complex degradation process. We review the influence of MBMs on gene/protein biosynthesis and expression at the site of implantation, as well as throughout the body. This paper provides a systematic review of the cellular/molecular behavior of local tissue on the response to Mg degradation, which may facilitate a better prediction of long-term degradation and the safe use of magnesium-based implants through metal innovation.

  10. Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy.

    Science.gov (United States)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun; Yang, Yuzhen; Yu, Yang; Wen, Kaile

    2017-12-01

    Pure aluminum oxide (Al2O3) and zinc aluminum oxide (Zn x Al1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al2O3/Zn0.8Al0.2O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (ΔE V) and conduction band offset (ΔE C) for the interface of the Al2O3/Zn0.8Al0.2O heterojunction have been constructed. An accurate value of ΔE V = 0.82 ± 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al2O3 thickness. Given the experimental E g of 6.8 eV for Al2O3 and 5.29 eV for Zn0.8Al0.2O, a type-I heterojunction with a ΔE C of 0.69 ± 0.12 eV was found. The precise determination of the band alignment of Al2O3/Zn0.8Al0.2O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.

  11. Nano-Scale Devices for Frequency-Based Magnetic Biosensing

    Science.gov (United States)

    2017-01-31

    which itself contains a magnetic vortex). Magnetoresistive rectification (which depends on anisotropic magnetoresistance) leads to a voltage ...AFRL-AFOSR-JP-TR-2017-0010 Nano-Scale Devices for Frequency-Based Magnetic Biosensing Peter Metaxas UNIVERSITY OF WESTERN AUSTRALIA Final Report 01...currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION. 1. REPORT DATE (DD-MM-YYYY)   09-02-2017 2. REPORT TYPE

  12. Review of GaN-based devices for terahertz operation

    Science.gov (United States)

    Ahi, Kiarash

    2017-09-01

    GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ˜90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaN-based devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

  13. Piezophototronic Effect Enhanced Self-powered UV/Visible Photodetector Based on Type-II ZnO/ZnSe Core/Shell Heterojunction

    Science.gov (United States)

    Yan, Shuke; Rai, Satish; Zheng, Zhi; Alqarni, Fahad; Bhatt, Manish; Retana, Michael; Zhou, Weilie

    Piezophototronic effect, coupling of piezoelectric and optical properties in semiconductor materials, has attracted much interest recently because of its capabilities of improving device performance significantly. In this paper, we report a Piezophototronic effect enhanced self-powered broadband UV/visible photodetector based on ZnO/ZnSe core/shell nanowire array. The integrated photodetector based on the ZnO/ZnSe core/shell structure is capable of detecting the whole band range of the visible spectrum as well as UV light, and it is further boosted through applying compressive load under different wavelength excitation sources by three orders of magnitude in the relative responsivity. The significant improved performance is believed to stem from piezophototronic effect and its abrupt interface between ZnSe and ZnO. Furthermore, the device exhibits good self-powered photodetection performance under UV/visible light illumination. This work is expected to generate broad interest in exploring the application using type II heterostructure for broadband UV/visible photodetection under both powered and self-powered conditions.

  14. Bulk-Heterojunction Organic Solar Cells: Five Core Technologies for Their Commercialization.

    Science.gov (United States)

    Kang, Hongkyu; Kim, Geunjin; Kim, Junghwan; Kwon, Sooncheol; Kim, Heejoo; Lee, Kwanghee

    2016-09-01

    The past two decades of vigorous interdisciplinary approaches has seen tremendous breakthroughs in both scientific and technological developments of bulk-heterojunction organic solar cells (OSCs) based on nanocomposites of π-conjugated organic semiconductors. Because of their unique functionalities, the OSC field is expected to enable innovative photovoltaic applications that can be difficult to achieve using traditional inorganic solar cells: OSCs are printable, portable, wearable, disposable, biocompatible, and attachable to curved surfaces. The ultimate objective of this field is to develop cost-effective, stable, and high-performance photovoltaic modules fabricated on large-area flexible plastic substrates via high-volume/throughput roll-to-roll printing processing and thus achieve the practical implementation of OSCs. Recently, intensive research efforts into the development of organic materials, processing techniques, interface engineering, and device architectures have led to a remarkable improvement in power conversion efficiencies, exceeding 11%, which has finally brought OSCs close to commercialization. Current research interests are expanding from academic to industrial viewpoints to improve device stability and compatibility with large-scale printing processes, which must be addressed to realize viable applications. Here, both academic and industrial issues are reviewed by highlighting historically monumental research results and recent state-of-the-art progress in OSCs. Moreover, perspectives on five core technologies that affect the realization of the practical use of OSCs are presented, including device efficiency, device stability, flexible and transparent electrodes, module designs, and printing techniques. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Medical Devices; Immunology and Microbiology Devices; Classification of the Streptococcus SPP. Nucleic Acid-Based Assay. Final order.

    Science.gov (United States)

    2017-10-30

    The Food and Drug Administration (FDA or we) is classifying the Streptococcus spp. nucleic acid-based assay into class II (special controls). The special controls that apply to the device type are identified in this order and will be part of the codified language for the Streptococcus spp. nucleic acid-based assay's classification. We are taking this action because we have determined that classifying the device into class II (special controls) will provide a reasonable assurance of safety and effectiveness of the device. We believe this action will also enhance patients' access to beneficial innovative devices, in part by reducing regulatory burdens.

  16. Crystallinity of the epitaxial heterojunction of C60 on single crystal pentacene

    Science.gov (United States)

    Tsuruta, Ryohei; Mizuno, Yuta; Hosokai, Takuya; Koganezawa, Tomoyuki; Ishii, Hisao; Nakayama, Yasuo

    2017-06-01

    The structure of pn heterojunctions is an important subject in the field of organic semiconductor devices. In this work, the crystallinity of an epitaxial pn heterojunction of C60 on single crystal pentacene is investigated by non-contact mode atomic force microscopy and high-resolution grazing incidence x-ray diffraction. Analysis shows that the C60 molecules assemble into grains consisting of single crystallites on the pentacene single crystal surface. The in-plane mean crystallite size exceeds 0.1 μm, which is at least five time larger than the size of crystallites deposited onto polycrystalline pentacene thin films grown on SiO2. The results indicate that improvement in the crystal quality of the underlying molecular substrate leads to drastic promotion of the crystallinity at the organic semiconductor heterojunction.

  17. Heterojunction photodiode fabricated from hydrogen treated ZnO nanowires grown on p-silicon substrate.

    Science.gov (United States)

    Shao, Dali; Yu, Mingpeng; Lian, Jie; Sawyer, Shayla

    2012-11-19

    A heterojunction photodiode was fabricated from ZnO nanowires (NWs) grown on a p-type Si (100) substrate using a hydrothermal method. Post growth hydrogen treatment was used to improve the conductivity of the ZnO NWs. The heterojunction photodiode showed diode characteristics with low reverse saturation current (5.58 × 10(-7) A), relatively fast transient response, and high responsivity (22 A/W at 363 nm). Experiments show that the photoresponsivity of the photodiode is dependent on the polarity of the voltages. The photoresponsivity of the device was discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process.

  18. Experimental preparation of lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates

    Science.gov (United States)

    Fei, Fucong; Song, Fengqi

    For the first time, lateral heterojunction of Sb2Te3-Bi2Te3 was successfully realized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and one-dimensional topological interface states. The relevant works on materials optimization and fabrication of spin devices are already under way. (Nanoletters 2015, 15, 5905 -5911))

  19. Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

    Science.gov (United States)

    Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

    2013-01-01

    The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. PMID:24145425

  20. Analysis of Android Device-Based Solutions for Fall Detection

    Directory of Open Access Journals (Sweden)

    Eduardo Casilari

    2015-07-01

    Full Text Available Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources to fall detection solutions.

  1. Analysis of Android Device-Based Solutions for Fall Detection.

    Science.gov (United States)

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-07-23

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions.

  2. Photonic devices based on black phosphorus and related hybrid materials

    Science.gov (United States)

    Vitiello, M. S.; Viti, L.

    2016-08-01

    Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective means for the manipulation and control of carriers, from the visible to the far-infrared, leading to the development of highly efficient devices like sources, detectors and modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them, black phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be specifically engineered to comply with different applications, like transparent saturable absorbers, fast photocounductive switches and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black-phosphorus-based THz photonics and discuss future perspectives of this rapidly developing research field.

  3. Enhanced photocoagulation with catheter-based diffusing optical device

    Science.gov (United States)

    Kang, Hyun Wook; Kim, Jeehyun; Oh, Jungwhan

    2012-11-01

    A novel balloon catheter-based diffusing optical device was designed and evaluated to assist in treating excessive menstrual bleeding. A synthetic fused-silica fiber was micro-machined precisely to create scattering segments on a 25 mm long fiber tip for uniform light distribution. A visible wavelength (λ=532 nm) was used to specifically target the endometrium due to the high vascularity of the uterine wall. Optical simulation presented 30% wider distribution of photons along with approximately 40% higher irradiance induced by addition of a glass cap to the diffuser tip. Incorporation of the optical diffuser with a polyurethane balloon catheter considerably enhanced coagulation depth and area (i.e., 3.5 mm and 18.9 cm2 at 1 min irradiation) in tissue in vitro. The prototype device demonstrated the coagulation necrosis of 2.8±1.2 mm (n=18) and no thermal damage to myometrium in in vivo caprine models. A prototype 5 cm long balloon catheter-assisted optical diffuser was also evaluated with a cadaveric human uterus to confirm the coagulative response of the uterine tissue as well as to identify the further design improvement and clinical applicability. The proposed catheter-based diffusing optical device can be a feasible therapeutic tool to photocoagulate endometrial cell layers in an efficient and safe manner.

  4. The Effects of Negative Differential Resistance, Bipolar Spin-Filtering, and Spin-Rectifying on Step-Like Zigzag Graphene Nanoribbons Heterojunctions with Single or Double Edge-Saturated Hydrogen

    Science.gov (United States)

    Wang, Lihua; Zhao, Jianguo; Ding, Bingjun; Guo, Yong

    2017-01-01

    In this study, we investigated the spin-resolved transport aspects of step-like zigzag graphene ribbons (ZGNRs) with single or double edge-saturated hydrogen using a method that combined the density functional theory with the nonequilibrium Green's function method under the local spin density approximation. We found that, when the ZGNR-based heterojunctions were in a parallel or antiparallel layout, negative differential resistance, the maximum bipolar spin-filtering, and spin-rectifying effects occurred synchronously except for the case of spin-down electrons in the parallel magnetic layouts. Interestingly, these spin-resolved transport properties were almost unaffected by altering the widths of the two component ribbons. Therefore, step-like ZGNR heterojunctions are promising for use in designing high-performance multifunctional spintronic devices.

  5. Electrospinning direct preparation of SnO{sub 2}/Fe{sub 2}O{sub 3} heterojunction nanotubes as an efficient visible-light photocatalyst

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Chengquan; Li, Yuren; Su, Qing; Lu, Bingan; Pan, Jiaqi; Zhang, Jiawang; Xie, Erqing; Lan, Wei, E-mail: lanw@lzu.edu.cn

    2013-10-25

    Highlights: •SnO{sub 2}/Fe{sub 2}O{sub 3} nano-heterojunction-tubes are prepared by a facile electrospinning technique. •The formation mechanism of heterojunction tubes is proposed for self-polymer-templates action. •SnO{sub 2}/Fe{sub 2}O{sub 3} nano-heterojunction-tubes show high photocatalytic activity under visible light irradiation. •The reasons for the high photocatalytic activity are investigated in detail. -- Abstract: Herein SnO{sub 2}/Fe{sub 2}O{sub 3} heterojunction nanotubes are prepared by a facile electrospinning technique. The heterojunction nanotubes with a diameter of about 200 nm uniformly distribute SnO{sub 2} and Fe{sub 2}O{sub 3} nanocrystals and present the obvious interfaces between them, which form perfect SnO{sub 2}/Fe{sub 2}O{sub 3} nano-heterojunctions. A possible mechanism based on self-polymer-templates is proposed to explain the formation of SnO{sub 2}/Fe{sub 2}O{sub 3} heterojunction nanotubes. The heterojunction nanotubes show high photocatalytic activity for the degradation of RhB dye under visible light irradiation. The prepared SnO{sub 2}/Fe{sub 2}O{sub 3} heterojunction nanotubes can also be applied to other fields such as sensor, lithium-ion batteries.

  6. Performance of planar heterojunction perovskite solar cells under light concentration

    Directory of Open Access Journals (Sweden)

    Aaesha Alnuaimi

    2016-11-01

    Full Text Available In this work, we present 2D simulation of planar heterojunction perovskite solar cells under high concentration using physics-based TCAD. The performance of planar perovskite heterojunction solar cells is examined up to 1000 suns. We analyze the effect of HTM mobility and band structure, surface recombination velocities at interfaces and the effect of series resistance under concentrated light. The simulation results revealed that the low mobility of HTM material limits the improvement in power conversation efficiency of perovskite solar cells under concentration. In addition, large band offset at perovskite/HTM interface contributes to the high series resistance. Moreover, losses due to high surface recombination at interfaces and the high series resistance deteriorate significantly the performance of perovskite solar cells under concentration.

  7. Double heterojunction nanowire photocatalysts for hydrogen generation

    Science.gov (United States)

    Tongying, P.; Vietmeyer, F.; Aleksiuk, D.; Ferraudi, G. J.; Krylova, G.; Kuno, M.

    2014-03-01

    Charge separation and charge transfer across interfaces are key aspects in the design of efficient photocatalysts for solar energy conversion. In this study, we investigate the hydrogen generating capabilities and underlying photophysics of nanostructured photocatalysts based on CdSe nanowires (NWs). Systems studied include CdSe, CdSe/CdS core/shell nanowires and their Pt nanoparticle-decorated counterparts. Femtosecond transient differential absorption measurements reveal how semiconductor/semiconductor and metal/semiconductor heterojunctions affect the charge separation and hydrogen generation efficiencies of these hybrid photocatalysts. In turn, we unravel the role of surface passivation, charge separation at semiconductor interfaces and charge transfer to metal co-catalysts in determining photocatalytic H2 generation efficiencies. This allows us to rationalize why Pt nanoparticle decorated CdSe/CdS NWs, a double heterojunction system, performs best with H2 generation rates of ~434.29 +/- 27.40 μmol h-1 g-1 under UV/Visible irradiation. In particular, we conclude that the CdS shell of this double heterojunction system serves two purposes. The first is to passivate CdSe NW surface defects, leading to long-lived charges at the CdSe/CdS interface capable of carrying out reduction chemistries. Upon photoexcitation, we also find that CdS selectively injects charges into Pt NPs, enabling simultaneous reduction chemistries at the Pt NP/solvent interface. Pt nanoparticle decorated CdSe/CdS NWs thus enable reduction chemistries at not one, but rather two interfaces, taking advantage of each junction's optimal catalytic activities.Charge separation and charge transfer across interfaces are key aspects in the design of efficient photocatalysts for solar energy conversion. In this study, we investigate the hydrogen generating capabilities and underlying photophysics of nanostructured photocatalysts based on CdSe nanowires (NWs). Systems studied include CdSe, CdSe/CdS core

  8. Charge-carrier selective electrodes for organic bulk heterojunction solar cell by contact-printed siloxane oligomers

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Hyun-Sik; Khang, Dahl-Young, E-mail: dykhang@yonsei.ac.kr

    2015-08-31

    ‘Smart’ (or selective) electrode for charge carriers, both electrons and holes, in organic bulk-heterojunction (BHJ) solar cells using insertion layers made of hydrophobically-recovered and contact-printed siloxane oligomers between electrodes and active material has been demonstrated. The siloxane oligomer insertion layer has been formed at a given interface simply by conformally-contacting a cured slab of polydimethylsiloxane stamp for less than 100 s. All the devices, either siloxane oligomer printed at one interface only or printed at both interfaces, showed efficiency enhancement when compared to non-printed ones. The possible mechanism that is responsible for the observed efficiency enhancement has been discussed based on the point of optimum symmetry and photocurrent analysis. Besides its simplicity and large-area applicability, the demonstrated contact-printing technique does not involve any vacuum or wet processing steps and thus can be very useful for the roll-based, continuous production scheme for organic BHJ solar cells. - Highlights: • Carrier-selective insertion layer in organic bulk heterojunction solar cells • Simple contact-printing of siloxane oligomers improves cell efficiency. • Printed siloxane layer reduces carrier recombination at electrode surfaces. • Siloxane insertion layer works equally well at both electrode surfaces. • Patterned PDMS stamp shortens the printing time within 100 s.

  9. Spectral response of porous silicon based photovoltaic devices

    Science.gov (United States)

    Ünal, Bayram; Bayliss, Sue C.; Clarke, David T.

    2000-04-01

    The spectral responses of photovoltaic devices based on metal/porous silicon (PS)/silicon (Si) sandwich structures are presented. At room temperature, the photoresponse (photovoltage or photocurrent) of the devices has been measured by the variation of the optical excitation energy from a synchrotron radiation source from the near UV to the near IR. The highest photosensitivity was found to be around a wavelength of ˜500 nm, corresponding to the maximum intensity of the solar spectrum. Having a wider photoresponse full width at half maximum (FWHM) than conventional forms of silicon used for solar cells within the earlier excitation energy range, PS has promising potential for enhanced photosensitivity efficiency. Such improvements could be made by modification of the Si nanostructure, since the peak position and FWHM were found to correlate with the size and size distributions of the pores, respectively, of the Si nanocrystallites in the porous Si layers. Gains could also be made in the contact design, and in any case such devices are more stable than their light emitting diode analogues.

  10. MEMS- and NEMS-based smart devices and systems

    Science.gov (United States)

    Varadan, Vijay K.

    2001-11-01

    structures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5-40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended conventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross- linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

  11. A microfluidic device based on an evaporation-driven micropump.

    Science.gov (United States)

    Nie, Chuan; Frijns, Arjan J H; Mandamparambil, Rajesh; den Toonder, Jaap M J

    2015-04-01

    In this paper we introduce a microfluidic device ultimately to be applied as a wearable sweat sensor. We show proof-of-principle of the microfluidic functions of the device, namely fluid collection and continuous fluid flow pumping. A filter-paper based layer, that eventually will form the interface between the device and the skin, is used to collect the fluid (e.g., sweat) and enter this into the microfluidic device. A controllable evaporation driven pump is used to drive a continuous fluid flow through a microfluidic channel and over a sensing area. The key element of the pump is a micro-porous membrane mounted at the channel outlet, such that a pore array with a regular hexagonal arrangement is realized through which the fluid evaporates, which drives the flow within the channel. The system is completely fabricated on flexible polyethylene terephthalate (PET) foils, which can be the backbone material for flexible electronics applications, such that it is compatible with volume production approaches like Roll-to-Roll technology. The evaporation rate can be controlled by varying the outlet geometry and the temperature. The generated flows are analyzed experimentally using Particle Tracking Velocimetry (PTV). Typical results show that with 1 to 61 pores (diameter = 250 μm, pitch = 500 μm) flow rates of 7.3 × 10(-3) to 1.2 × 10(-1) μL/min are achieved. When the surface temperature is increased by 9.4°C, the flow rate is increased by 130 %. The results are theoretically analyzed using an evaporation model that includes an evaporation correction factor. The theoretical and experimental results are in good agreement.

  12. Photopolymer-based three-dimensional optical waveguide devices

    Science.gov (United States)

    Kagami, M.; Yamashita, T.; Yonemura, M.; Kawasaki, A.; Watanabe, O.; Tomiki, M.

    2012-02-01

    Photopolymer based three-dimensional (3D) waveguide devices are very attractive in low-cost optical system integration. Especially, Light-Induced Self-Written (LISW) technology is suitable for this application, and the technology enables low-loss 3D optical circuitry formation from an optical fiber tip which soaked in photopolymer solution by employing its photo-polymerization due to own irradiation from the fiber tip. This technology is expected drastic mounting cost reduction in fields of micro-optic and hybrid integration devices assembly. The principle of the LISW optical waveguides is self-trapping effect of the irradiation flux into the self-organized waveguide, where, used wavelength can be chosen to fit photopolymer's reactivity from visible to infrared. Furthermore, this effect also makes possible grating formation and "optical solder" interconnection. Actually fabricated self-written grating shows well defined deep periodic index contrast and excellent optical property for the wavelength selectivity. And the "optical solder" interconnection realizes a passive optical interconnection between two faceted fibers or devices by the LISW waveguide even if there is a certain amount of gap and a small degree of misalignment exist. The LISW waveguides grow towards each other from both sides to a central point where the opposing beams overlap and are then combined into one waveguide. This distinctive effect is confirmed in all kind optical fibers, such as from a singlemode to 1-mm-corediameter multimode optical fiber. For example of complicated WDM optical transceiver module, mounted a branchedwaveguide and filter elements, effectiveness of LISW technology is outstanding. In assembling and packaging process, neither dicing nor polishing is needed. In this paper, we introduce LISW technology principles and potential application to integrated WDM optical transceiver devices for both of singlemode and multimode system developed in our research group.

  13. Large Lateral Photovoltage Observed in MoS2 Thickness-Modulated ITO/MoS2/p-Si Heterojunctions.

    Science.gov (United States)

    Qiao, Shuang; Zhang, Bin; Feng, Kaiyu; Cong, Ridong; Yu, Wei; Fu, Guangsheng; Wang, Shufang

    2017-05-31

    Molybdenum disulfide (MoS2), as a typical two-dimensional (2D) material, has attracted extensive attention in recent years because of its fascinating optical and electric properties. However, the applications of MoS2 have been mainly in photovoltaic devices, field-effect transistors, photodetectors, and gas sensors. Here, it is demonstrated that MoS2 can be found another important application in position sensitive detector (PSD) based on lateral photovoltaic effect (LPE) in it. The ITO/MoS2(3, 5, 7, 9, 10, 20, 50, 100 nm)/p-Si heterojunctions were successfully prepared with vertically standing nanosheet structure of MoS2. Because of the special structure and the strong light absorption of the relatively thick MoS2 film, the ITO/MoS2/p-Si heterojunction exhibits an abnormal thickness-dependent LPE, which can be ascribed to the n- to p-type transformation of MoS2. Moreover, the LPE of ITO/MoS2/p-Si structure improves greatly because of forward enhanced built-in field by type transformation in a wide spectrum response ranging from visible to near-infrared, especially the noticeable improvement in infrared region, indicating its great potential application in infrared PSDs. This work not only suggest that the ITO/MoS2/p-Si heterojunction shows great potential in LPE-based sensors, but also unveils the importance of type transformation of MoS2 in MoS2-based photoelectric devices besides strong light absorption and suitable bandgap.

  14. Correlation between dynamic parameters and device performance of organic solar cells

    OpenAIRE

    Kniepert, Juliane

    2015-01-01

    Organic bulk heterojunction (BHJ) solar cells based on polymer:fullerene blends are a promising alternative for a low-cost solar energy conversion. Despite significant improvements of the power conversion efficiency in recent years, the fundamental working principles of these devices are yet not fully understood. In general, the current output of organic solar cells is determined by the generation of free charge carriers upon light absorption and their transport to the electrodes in competiti...

  15. Radiation Hardening and Heavy-ion to Laser Correlation in SiGe Devices and Circuits

    Science.gov (United States)

    2017-03-01

    Radiation Hardening and Heavy-ion to Laser Correlation in SiGe Devices and Circuits Zachary E. Fleetwood and John D. Cressler School of...platforms intended for radiation - intense applications and spaceflight hardware considerations. A number of new radio frequency (RF) studies have...extended the knowledge base of applying radiation -hardening-by- design (RHBD) to SiGe Heterojunction Bipolar Transistor (HBT) circuits. Other research

  16. Mashup Based Content Search Engine for Mobile Devices

    OpenAIRE

    Kohei Arai

    2013-01-01

    Mashup based content search engine for mobile devices is proposed. Example of the proposed search engine is implemented with Yahoo!JAPAN Web SearchAPI, Yahoo!JAPAN Image searchAPI, YouTube Data API, and Amazon Product Advertising API. The retrieved results are also merged and linked each other. Therefore, the different types of contents can be referred once an e-learning content is retrieved. The implemented search engine is evaluated with 20 students. The results show usefulness and effectiv...

  17. Quantum Electrodynamic Modeling of Silicon-Based Active Devices

    Directory of Open Access Journals (Sweden)

    Shouyuan Shi

    2008-01-01

    Full Text Available We propose a time-domain analysis of an active medium based on a coupled quantum mechanical and electromagnetic model to accurately simulate the dynamics of silicon-based photonic devices. To fully account for the nonlinearity of an active medium, the rate equations of a four-level atomic system are introduced into the electromagnetic polarization vector. With these auxiliary differential equations, we solve the time evolution of the electromagnetic waves and atomic population densities using the FDTD method. The developed simulation approach has been used to model light amplification and amplified spontaneous emission in silicon nanocrystals, as well as the lasing dynamics in a novel photonic crystal-based silicon microcavity.

  18. Silicon nanowire array architecture for heterojunction electronics

    Energy Technology Data Exchange (ETDEWEB)

    Solovan, M. M., E-mail: m.solovan@chnu.edu.ua [Chernivtsi National University, Department of Electronics and Energy Engeneering (Ukraine); Brus, V. V. [Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Institute for Silicon Photovoltaics (Germany); Mostovyi, A. I.; Maryanchuk, P. D.; Orletskyi, I. G.; Kovaliuk, T. T. [Chernivtsi National University, Department of Electronics and Energy Engeneering (Ukraine); Abashin, S. L. [National Aerospace University “Kharkiv Aviation Institute”, Department of Physics (Ukraine)

    2017-04-15

    Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.

  19. An investigation of paper based microfluidic devices for size based separation and extraction applications.

    Science.gov (United States)

    Zhong, Z W; Wu, R G; Wang, Z P; Tan, H L

    2015-09-01

    Conventional microfluidic devices are typically complex and expensive. The devices require the use of pneumatic control systems or highly precise pumps to control the flow in the devices. This work investigates an alternative method using paper based microfluidic devices to replace conventional microfluidic devices. Size based separation and extraction experiments conducted were able to separate free dye from a mixed protein and dye solution. Experimental results showed that pure fluorescein isothiocyanate could be separated from a solution of mixed fluorescein isothiocyanate and fluorescein isothiocyanate labeled bovine serum albumin. The analysis readings obtained from a spectrophotometer clearly show that the extracted tartrazine sample did not contain any amount of Blue-BSA, because its absorbance value was 0.000 measured at a wavelength of 590nm, which correlated to Blue-BSA. These demonstrate that paper based microfluidic devices, which are inexpensive and easy to implement, can potentially replace their conventional counterparts by the use of simple geometry designs and the capillary action. These findings will potentially help in future developments of paper based microfluidic devices. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

    Science.gov (United States)

    Fung, Andy; Samoska, Lorene; Velebir, Jim; Siege, Peter; Rodwell, Mark; Paidi, Vamsi; Griffth, Zach; Urteaga, Miguel; Malik, Roger

    2004-01-01

    We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

  1. Bulk-heterojunction organic solar cells sandwiched by solution processed molybdenum oxide and titania nanosheet layers

    Science.gov (United States)

    Itoh, Eiji; Goto, Yoshinori; Fukuda, Katsutoshi

    2014-02-01

    The contributions of ultrathin titania nanosheet (TN) crystallites were studied in both an inverted bulk-heterojunction (BHJ) cell in an indium-tin oxide (ITO)/titania nanosheet (TN)/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methylester (PCBM) active layer/MoOx/Ag multilayered photovoltaic device and a conventional BHJ cell in ITO/MoOx/P3HT:PCBM active layer/TN/Al multilayered photovoltaic device. The insertion of only one or two layers of poly(diallyldimethylammonium chloride) (PDDA) and TN multilayered film prepared by the layer-by-layer deposition technique effectively decreased the leakage current and increased the open circuit voltage (VOC), fill factor (FF), and power conversion efficiency (η). The conventional cell sandwiched between a solution-processed, partially crystallized molybdenum oxide hole-extracting buffer layer and a TN electron extracting buffer layer showed comparable cell performance to a device sandwiched between vacuum-deposited molybdenum oxide and TN layers, whereas the inverted cell with solution-processed molybdenum oxide showed a poorer performance probably owing to the increment in the leakage current across the film. The abnormal S-shaped curves observed in the inverted BHJ cell above VOC disappeared with the use of a polyfluorene-based cationic semiconducting polymer as a substitute for an insulating PDDA film, resulting in the improved cell performance.

  2. Field-Based Validation of a Tactile Navigation Device.

    Science.gov (United States)

    Elliott, Linda R; van Erp, Jan B F; Redden, Elizabeth S; Duistermaat, Maaike

    2010-01-01

    In this paper, we present three field-based evaluations of a tactile land navigation system. In Experiment 1, we transition from a laboratory setting to rugged terrain used to train US Army soldier land navigation. Navigation in this challenging terrain requires careful attention to one's surroundings. Participants navigated 3 waypoints along 600 meters through heavily wooded terrain, using 1) map and compass, 2) standard alpha-numeric handheld GPS device, and 3) the tactile GPS system, while also responding to radio requests for information. Experiment 2 used the same challenging terrain during night operations, where participants must also search for live and silhouette targets, using 1) handheld GPS device, 2) head-mounted map-based GPS, and 3) the tactile GPS system. In addition to navigating, participants searched for silhouette and live (human) targets. Experiment 3 had participants navigate with 1) a commercial GPS arrow display, 2) the tactile GPS system, and 3) both together. We conclude that tactile navigation displays can be used in strenuous outdoor environments and can outperform visual displays under conditions of high cognitive and visual workload.

  3. Memristive device based learning for navigation in robots.

    Science.gov (United States)

    Sarim, Mohammad; Kumar, Manish; Jha, Rashmi; Minai, Ali A

    2017-07-11

    Biomimetic robots have gained attention recently for various applications ranging from resource hunting to search and rescue operations during disasters. Biological species are known to intuitively learn from the environment, gather and process data, and make appropriate decisions. Such sophisticated computing capabilities in robots are difficult to achieve, especially if done in real-time with ultra- low energy consumption. Here, we present a novel memristive device based learning architecture for robots. Two terminal memristive devices with resistive switching of oxide layer are modeled in a crossbar array to develop a neuromorphic platform that can impart active real-time learning capabilities in a robot. This approach is validated by navigating a robot vehicle in an unknown environment with randomly placed obstacles. Further, the proposed scheme is compared with Reinforcement Learning based algorithms using local and global knowledge of the environment. The simulation as well as experimental results corroborate the validity and potential of the proposed learning scheme for robots. The results also show that our learning scheme approaches an optimal solution for some environment layouts in robot navigation. © 2017 IOP Publishing Ltd.

  4. Biomaterial-Based Implantable Devices for Cancer Therapy.

    Science.gov (United States)

    Chew, Sue Anne; Danti, Serena

    2017-01-01

    This review article focuses on the current local therapies mediated by implanted macroscaled biomaterials available or proposed for fighting cancer and also highlights the upcoming research in this field. Several authoritative review articles have collected and discussed the state-of-the-art as well as the advancements in using biomaterial-based micro- and nano-particle systems for drug delivery in cancer therapy. On the other hand, implantable biomaterial devices are emerging as highly versatile therapeutic platforms, which deserve an increased attention by the healthcare scientific community, as they are able to offer innovative, more effective and creative strategies against tumors. This review summarizes the current approaches which exploit biomaterial-based devices as implantable tools for locally administrating drugs and describes their specific medical applications, which mainly target resected brain tumors or brain metastases for the inaccessibility of conventional chemotherapies. Moreover, a special focus in this review is given to innovative approaches, such as combined delivery therapies, as well as to alternative approaches, such as scaffolds for gene therapy, cancer immunotherapy and metastatic cell capture, the later as promising future trends in implantable biomaterials for cancer applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Paper-based microfluidic devices by plasma treatment.

    Science.gov (United States)

    Li, Xu; Tian, Junfei; Nguyen, Thanh; Shen, Wei

    2008-12-01

    Paper-based microfluidic patterns have been demonstrated in recent literature to have a significant potential in developing low-cost analytical devices for telemedicine and general health monitoring. This study reports a new method for making microfluidic patterns on a paper surface using plasma treatment. Paper was first hydrophobized and then treated using plasma in conjunction with a mask. This formed well defined hydrophilic channels on the paper. Paper-based microfluidic systems produced in this way retained the flexibility of paper and a variety of patterns could be formed. A major advantage of this system is that simple functional elements such as switches and filters can be built into the patterns. Examples of these elements are given in this study.

  6. Mobile Device-Based Applications for Childhood Anxiety Disorders.

    Science.gov (United States)

    Whiteside, Stephen P H

    2016-04-01

    Given that childhood anxiety disorders are common and frequently undertreated, novel treatment platforms are needed. The current article explores the potential for mobile device-based (m-health) applications, to expand access to evidence-based treatment. This article reviews the relevant literature regarding barriers to disseminating evidence-based treatment, the potential benefits of the m-health platform, standards for evaluating m-health interventions, and currently available applications. Although a large number of m-health applications for anxiety are available, the vast majority of them are inconsistent with therapy protocols supported by the child anxiety treatment literature. The relatively few m-health applications based on evidence-based practice have not yet been examined empirically. Realizing the potential of m-health for child anxiety will require addressing the uncertainty around the necessary and sufficient components of cognitive-behavioral therapy (CBT), as well as the common challenges associated with delivering interventions via information and communication technology. Mayo Clinic Anxiety Coach is an m-health application designed by the author and colleagues to be consistent with exposure-based CBT and principles for effective intervention delivery via information and communication technology. Recommendations for identifying, using, and developing m-health applications for childhood anxiety disorders are presented.

  7. A monitoring device for pressurised-air-driven diaphragm-based artificial heart assist devices

    NARCIS (Netherlands)

    Hoeben, F.P.; Hoeben, F.P.; de Mul, F.F.M.; Stokkink, J.S.D.; Stokkink, H.S.D.; Koelink, M.H.; Koelink, M.H.; Greve, Jan

    1992-01-01

    A non-invasive device has been developed to monitor the diaphragm position and the blood flow in artificial heart assist devices equipped with a pressurised-air-driven diaphragm. Light scattering from the diaphragm is used as a mechanism for measuring. Information about the position of several

  8. Optical and electronic proprieties of thin films based on (Z-5-(4-chlorobenzylidene-3-(2-ethoxyphenyl-2 thioxothiazolidin-4-one, (CBBTZ and possible application as exciton-blocking layer in heterojunction organic solar cells

    Directory of Open Access Journals (Sweden)

    Morsli M.

    2012-06-01

    Full Text Available In this work, organic thin film solar cells with structures based on CuPc/C60 bulk heterojunctions, have been fabricated and characterized. The effect of introducing an exciton blocking layer (EBL between the active layer and the metal layer in the solar cell was investigated. For that (Z-5-(4-chlorobenzylidene-3-(2-ethoxyphenyl-2-thioxothiazolidin-4-one, that we called (CBBTZ has been synthesized, characterized and probed as EBL. It was shown that optimized structures containing EBLs resulted in an improvement in solar cell conversion efficiencies. The energy levels corresponding to the highest occupied molecular orbital (HOMO and the lowest unoccupied molecular orbital (LUMO of the CBBTZ have been determined from the first oxidation and reduction potential respectively, using cyclic voltametric (CV measurements. From CV curves, CBBTZ in dichloromethane showed a one electron reversible reduction and oxidation waves. The values of its HOMO and LUMO have been estimated to be 6.42 eV and 3.42 eV respectively. Such values show that CBBTZ could be probed as EBL in organic solar cells based on the ED/EA couple copper phthalocyanine(CuPc/fullerene (C60. The photovoltaic solar cells have been obtained by sequential deposition under vacuum of the different films where their thicknesses were measured in situ by a quartz monitor. When obtained, the averaged efficiency of the cells using the CBBTZ is higher than that achieved without EBL layer.

  9. All solution processed tandem polymer solar cells based on thermocleavable materials

    DEFF Research Database (Denmark)

    Hagemann, Ole; Bjerring, Morten; Nielsen, Niels Chr.

    2008-01-01

    efficiently solved. Devices comprised a transparent front cathode based on solution processed zinc oxide nanoparticles, a large band gap active layer based on a bulk heterojunction between zinc oxide and poly(3-carboxydithiophene) (P3CT) followed by a layer of PEDOT:PSS processed from water. The second cell...... in the stack employed a zinc oxide front cathode processed on top of the PEDOT:PSS layer from an organic solvent, a low band gap active layer based on a bulk heterojunction between zinc oxide and the novel poly(carboxyterthiophene-co-diphenylthienopyrazine) (P3CTTP) followed by a layer of PEDOT:PSS again...

  10. Atom devices based on single dopants in silicon nanostructures

    National Research Council Canada - National Science Library

    Moraru, Daniel; Udhiarto, Arief; Anwar, Miftahul; Nowak, Roland; Jablonski, Ryszard; Hamid, Earfan; Tarido, Juli Cha; Mizuno, Takeshi; Tabe, Michiharu

    2011-01-01

    .... In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single...

  11. Microvalve-based microfluidic device for C. elegans manipulation

    Science.gov (United States)

    Johari, S.; Nock, V.; Alkaisi, M. M.; Wang, W.

    2017-09-01

    In this paper, we report on the integration of a force measurement application capable of continuously measuring the forces generated by C. elegans in motion with a series of controllable microvalves which have an additional ability to increase control over worm selection and manipulation. The three-layer device consists of a pneumatic layer at the top, and a fluidic layer at the bottom with a thin PDMS membrane which functions as a microvalve sandwiched in between. The pneumatic layer functions as valves, whose operation is controlled pneumatically. The fluidic layer contains of PDMS micropillars for resolving the worm force from the deflection of the cantilever-like pillars. The measured force is horizontal and equivalent to a point force acting at half of the pillar height. By carefully controlling the incorporated microvalves, the proposed device is able to select and direct worm movement and at the same time increase the number of force measurement results collected. The integration of the microvalve with the PDMS micropillar-based on chip system can be easily combined with existing screening and imaging systems and also has the capability to facilitate high-throughput screening of force patterns in C. elegans locomotion behaviour.

  12. [Non-device-based telemonitoring : Toy or tool?

    Science.gov (United States)

    Stockburger, Martin

    2017-08-22

    Non-device-based telemedical management can be useful to prevent decompensation and death in patients suffering from easily disequilibrated conditions like diabetes mellitus, chronic obstructive pulmonary disease and heart failure (HF). This article summarizes current knowledge on non-device-based telemedical care for patients with HF. Several parameters (heart rate, heart rate variability, systolic blood pressure, pulse pressure, body weight, physical activity as derived from accelerometry, and occurrence of atrial and ventricular arrhythmias) have been identified as being associated with imminent clinical deterioration of HF patients. Structured telephone-based support and noninvasive telemonitoring with integrated electronic transfer of physiological data have been applied to care for HF patients and have been evaluated in multiple studies. The impact of telemedical care on clinical outcome appears to depend on the applied telemedical configuration and on the disease severity of targeted populations. The exclusive use of an automated telephone response system has not been successful. In patients with optimal medical therapy and relatively low decompensation risk noninvasive telemonitoring did not significantly reduce mortality. Nevertheless meta-analyses of structured telephone support and of noninvasive telemonitoring combining knowledge from available randomized trials suggest that both of these telemedical approaches may reduce the mortality risk of HF patients by 13-20%. The results of the Telemedical Interventional Management in Heart Failure II (TIM-HF II) trial on noninvasive telemonitoring versus usual care in 1500 high-risk HF patients are awaited in 2018 and will further clarify the usefulness of telemedical care in this field.

  13. A Game-theoretic Framework for Network Coding Based Device-to-Device Communications

    KAUST Repository

    Douik, Ahmed

    2016-06-29

    This paper investigates the delay minimization problem for instantly decodable network coding (IDNC) based deviceto- device (D2D) communications. In D2D enabled systems, users cooperate to recover all their missing packets. The paper proposes a game theoretic framework as a tool for improving the distributed solution by overcoming the need for a central controller or additional signaling in the system. The session is modeled by self-interested players in a non-cooperative potential game. The utility functions are designed so as increasing individual payoff results in a collective behavior achieving both a desirable system performance in a shared network environment and the Nash equilibrium. Three games are developed whose first reduces the completion time, the second the maximum decoding delay and the third the sum decoding delay. The paper, further, improves the formulations by including a punishment policy upon collision occurrence so as to achieve the Nash bargaining solution. Learning algorithms are proposed for systems with complete and incomplete information, and for the imperfect feedback scenario. Numerical results suggest that the proposed game-theoretical formulation provides appreciable performance gain against the conventional point-to-multipoint (PMP), especially for reliable user-to-user channels.

  14. A Room-temperature Hydrogen Gas Sensor Using Palladium-decorated Single-Walled Carbon Nanotube/Si Heterojunction

    Directory of Open Access Journals (Sweden)

    Yong Gang DU

    2016-05-01

    Full Text Available We report a room-temperature (RT hydrogen gas (H2 sensor based on palladium-decorated single-walled carbon nanotube/Si (Pd-SWNTs/Si heterojunction. The current-voltage (I-V curves of the Pd-SWNTs/Si heterojunction in different concentrations of H2 were measured. The experimental results reveal that the Pd-SWNTs/Si heterojunction exhibits high H2 response. After exposure to 0.02 %, 0.05 %, and 0.1 % H2 for 10 min, the resistance of the heterojunction increases dramatically. The response is 122 %, 269 % and 457 %, respectively. A simple interfacial theory is used to understand the gas sensitivity results. This approach is a step toward future CNTs-based gas sensors for practical application.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12925

  15. Scaling behavior and transport in bulk heterojunction materials

    Science.gov (United States)

    Danielson, Eric; Lombardo, Christopher; Dodabalapur, Ananth

    2011-03-01

    A lateral device geometry has been used to study charge transport in P3HT:C71 -PCBM bulk heterojunction devices. Analysis of current-voltage curves have previously been used to study charge transport in these materials. We perform ambipolar field effect transistor measurements on these structures to extract carrier mobilities. We are also able to describe the charge transport and recombination properties of these materials. Assymetric electrodes (Al, Au) separated by 100 nm- 20 μ m enable us to gain considerable insight into transport physics. Photocurrent measruements as a function of channel length, electric field, and illumination intensity (0.1-100 suns) are used to measure the ambipolar mobility-lifetime product and study how this correlates with measured field-effect mobilities at various electric fields. Lateral structures are shown to be a powerful tool to understand transport and the role of carrier mobility on photovoltaic performance.

  16. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martin, Francisco [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Schrebler, Ricardo [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Ramos-Barrado, Jose R. [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Dalchiele, Enrique A., E-mail: dalchiel@fing.edu.uy [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

    2012-12-15

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic-organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of {approx} 40% to {approx} 50% in the visible region between 450 and 700 nm. The current-voltage (I-V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range - 4 V to + 4 V. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: Black-Right-Pointing-Pointer Semitransparent inorganic-organic heterojunction thin film diodes investigated Black-Right-Pointing-Pointer n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction Black-Right-Pointing-Pointer Diodes exhibited an optical transmission of {approx} 40%-{approx} 50% in the visible region Black-Right-Pointing-Pointer Heterojunction current-voltage features show good rectifying diode characteristics Black-Right-Pointing-Pointer A forward to reverse current ratio as high as 35 (- 4 V to + 4 V range) was attained.

  17. Design and electrical characterization of Au/Anthracene/p-Si/Al organic/inorganic heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, Attieh A., E-mail: aaaalghamdi4@kau.edu.sa [Center of Nanotechnology, King Abdulaziz University, Department of Physics, North Jeddah (Saudi Arabia); Nawar, Ahmed M.; El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Yaghmour, S.J. [Department of Physics, King Abdulaziz University, North Jeddah (Saudi Arabia); Azam, Ameer [Center of Nanotechnology, King Abdulaziz University, Department of Physics, North Jeddah (Saudi Arabia)

    2015-02-15

    Highlights: • We have successfully fabricated a Au/Anthracene/p-Si/Al organic/inorganic heterojunction. • The calculated series resistance and the shunt resistance of the device were found to be 440 Ω and 1.47 MΩ, respectively. • The Cheung-Cheung and Norde’s models were used to investigate and determine the heterojunction parameters. • Essential junction parameters and performance of heterojunction established a photovoltaic behavior. • Open circuit voltage (V{sub oc}) 0.382 V, short circuit photocurrent (I{sub SC}) 0.72 mA and power conversion efficiency (η) of 4.65%. - Abstract: Hybrid organic/inorganic heterojunction of nanocrystalline Anthracene and p-Si was fabricated by using a conventional thermal evaporation technique. The crystal and molecular structure of the Anthracene thin films were analyzed by means of X-ray diffraction (XRD), and Fourier Transformation-Infra Red (FT-IR) spectroscopy. The morphologies of the Anthracene/p-Si were investigated by scanning electron microscopy (SEM). The dark current-voltage (I-V) characteristics of Au/Anthracene/p-Si/Al heterojunction were investigated at room temperature (293 K). The calculated series resistance and the shunt resistance of the device were found to be 440 Ω and 1.47 MΩ, respectively. The Cheung-Cheung and Norde’s models were used to investigate and determine the heterojunction parameters. The ideality factor and barrier height values of the Au/Anthracene/p-Si/Al diode were obtained to be 1.1 and 0.464 eV, respectively. The dependence of capacitance-voltage (C{sup -2}-V) for the device Anthracene/p-Si was found to be almost linear. Essential junction parameters and performance of heterojunction established a photovoltaic behavior with an open circuit voltage (V{sub oc}) 0.382 V, short circuit photocurrent (I{sub SC}) 0.72 mA and power conversion efficiency (η) of 4.65%.

  18. 3D Printed Graphene Based Energy Storage Devices

    Science.gov (United States)

    Foster, Christopher W.; Down, Michael P.; Zhang, Yan; Ji, Xiaobo; Rowley-Neale, Samuel J.; Smith, Graham C.; Kelly, Peter J.; Banks, Craig E.

    2017-03-01

    3D printing technology provides a unique platform for rapid prototyping of numerous applications due to its ability to produce low cost 3D printed platforms. Herein, a graphene-based polylactic acid filament (graphene/PLA) has been 3D printed to fabricate a range of 3D disc electrode (3DE) configurations using a conventional RepRap fused deposition moulding (FDM) 3D printer, which requires no further modification/ex-situ curing step. To provide proof-of-concept, these 3D printed electrode architectures are characterised both electrochemically and physicochemically and are advantageously applied as freestanding anodes within Li-ion batteries and as solid-state supercapacitors. These freestanding anodes neglect the requirement for a current collector, thus offering a simplistic and cheaper alternative to traditional Li-ion based setups. Additionally, the ability of these devices’ to electrochemically produce hydrogen via the hydrogen evolution reaction (HER) as an alternative to currently utilised platinum based electrodes (with in electrolysers) is also performed. The 3DE demonstrates an unexpectedly high catalytic activity towards the HER (-0.46 V vs. SCE) upon the 1000th cycle, such potential is the closest observed to the desired value of platinum at (-0.25 V vs. SCE). We subsequently suggest that 3D printing of graphene-based conductive filaments allows for the simple fabrication of energy storage devices with bespoke and conceptual designs to be realised.

  19. Evaluation of Sports Visualization Based on Wearable Devices

    Directory of Open Access Journals (Sweden)

    Bin Wang

    2017-12-01

    Full Text Available In order to visualize the physical education classroom in school, we create a visualized movement management system, which records the student's exercise data efficiently and stores data in the database that enables virtual reality client to call. Each individual's exercise data are gathered as the source material to study the law of group movement, playing a strategic role in managing physical education. Through the combination of wearable devices, virtual reality and network technology, the student movement data (time, space, rate, etc. are collected in real time to drive the role model in virtual scenes, which visualizes the movement data. Moreover, the Markov chain based algorithm is used to predict the movement state. The test results show that this method can quantize the student movement data. Therefore, the application of this system in PE classes can help teacher to observe the students’ real-time movement amount and state, so as to improve the teaching quality.

  20. Large area MEMS based ultrasound device for cancer detection

    Energy Technology Data Exchange (ETDEWEB)

    Wodnicki, Robert, E-mail: wodnicki@research.ge.com [GE Global Research, 1 Research Circle, Niskayuna, NY 12309 (United States); Thomenius, Kai [GE Global Research, 1 Research Circle, Niskayuna, NY 12309 (United States); Ming Hooi, Fong; Sinha, Sumedha P.; Carson, Paul L. [Radiology and Biomedical Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Lin Dersong; Zhuang Xuefeng; Khuri-Yakub, Pierre [Department of Electrical Engineering, Stanford University, Stanford, CA 94309 (United States); Woychik, Charles [GE Global Research, 1 Research Circle, Niskayuna, NY 12309 (United States)

    2011-08-21

    We present image results obtained using a prototype ultrasound array that demonstrates the fundamental architecture for a large area MEMS based ultrasound device for detection of breast cancer. The prototype array consists of a tiling of capacitive Micromachined Ultrasound Transducers (cMUTs) that have been flip-chip attached to a rigid organic substrate. The pitch on the cMUT elements is 185 {mu}m and the operating frequency is nominally 9 MHz. The spatial resolution of the new probe is comparable to those of production PZT probes; however the sensitivity is reduced by conditions that should be correctable. Simulated opposed-view image registration and Speed of Sound volume reconstruction results for ultrasound in the mammographic geometry are also presented.

  1. The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions

    OpenAIRE

    Zhang, Peng; Zhang, Wu; Wang, Junyong; Jiang, Kai; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

    2017-01-01

    Active and widely controllable phase transition optical materials have got rapid applications in energy-efficient electronic devices, field of meta-devices and so on. Here, we report the optical properties of the vanadium dioxide (VO2)/aluminum-doped zinc oxide (Al:ZnO) hybrid n-n type heterojunctions and the corresponding electro-optic performances of the devices. Various structures are fabricated to compare the discrepancy of the optical and electrical characteristics. It was found that the...

  2. Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design

    Energy Technology Data Exchange (ETDEWEB)

    MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

    2000-04-25

    The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

  3. ELOPTA: a novel microcontroller-based operant device.

    Science.gov (United States)

    Hoffman, Adam M; Song, Jianjian; Tuttle, Elaina M

    2007-11-01

    Operant devices have been used for many years in animal behavior research, yet such devices a regenerally highly specialized and quite expensive. Although commercial models are somewhat adaptable and resilient, they are also extremely expensive and are controlled by difficult to learn proprietary software. As an alternative to commercial devices, we have designed and produced a fully functional, programmable operant device, using a PICmicro microcontroller (Microchip Technology, Inc.). The electronic operant testing apparatus (ELOPTA) is designed to deliver food when a study animal, in this case a bird, successfully depresses the correct sequence of illuminated keys. The device logs each keypress and can detect and log whenever a test animal i spositioned at the device. Data can be easily transferred to a computer and imported into any statistical analysis software. At about 3% the cost of a commercial device, ELOPTA will advance behavioral sciences, including behavioral ecology, animal learning and cognition, and ethology.

  4. Hybrid zinc oxide/graphene electrodes for depleted heterojunction colloidal quantum-dot solar cells.

    Science.gov (United States)

    Tavakoli, Mohammad Mahdi; Aashuri, Hossein; Simchi, Abdolreza; Fan, Zhiyong

    2015-10-07

    Recently, hybrid nanocomposites consisting of graphene/nanomaterial heterostructures have emerged as promising candidates for the fabrication of optoelectronic devices. In this work, we have employed a facile and in situ solution-based process to prepare zinc oxide/graphene quantum dots (ZnO/G QDs) in a hybrid structure. The prepared hybrid dots are composed of a ZnO core, with an average size of 5 nm, warped with graphene nanosheets. Spectroscopic studies show that the graphene shell quenches the photoluminescence intensity of the ZnO nanocrystals by about 72%, primarily due to charge transfer reactions and static quenching. A red shift in the absorption peak is also observed. Raman spectroscopy determines G-band splitting of the graphene shell into two separated sub-bands (G(+), G(-)) caused by the strain induced symmetry breaking. It is shown that the hybrid ZnO/G QDs can be used as a counter-electrode for heterojunction colloidal quantum-dot solar cells for efficient charge-carrier collection, as evidenced by the external quantum efficiency measurement. Under the solar simulated spectrum (AM 1.5G), we report enhanced power conversion efficiency (35%) with higher short current circuit (80%) for lead sulfide-based solar cells as compared to devices prepared by pristine ZnO nanocrystals.

  5. Structure–property relationships of oligothiophene–isoindigo polymers for efficient bulk-heterojunction solar cells

    KAUST Repository

    Ma, Zaifei

    2014-01-01

    A series of alternating oligothiophene (nT)-isoindigo (I) copolymers (PnTI) were synthesized to investigate the influence of the oligothiophene block length on the photovoltaic (PV) properties of PnTI:PCBM bulk-heterojunction blends. Our study indicates that the number of thiophene rings (n) in the repeating unit alters both polymer crystallinity and polymer-fullerene interfacial energetics, which results in a decreasing open-circuit voltage (Voc) of the solar cells with increasing n. The short-circuit current density (Jsc) of P1TI:PCBM devices is limited by the absence of a significant driving force for electron transfer. Instead, blends based on P5TI and P6TI feature large polymer domains, which limit charge generation and thus Jsc. The best PV performance with a power conversion efficiency of up to 6.9% was achieved with devices based on P3TI, where a combination of a favorable morphology and an optimal interfacial energy level offset ensures efficient exciton separation and charge generation. The structure-property relationship demonstrated in this work would be a valuable guideline for the design of high performance polymers with small energy losses during the charge generation process, allowing for the fabrication of efficient solar cells that combine a minimal loss in Voc with a high Jsc. © 2014 The Royal Society of Chemistry.

  6. Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

    Science.gov (United States)

    Dahal, Bishnu R.

    The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics

  7. Small-molecule azomethines : Organic photovoltaics via Schiff base condensation chemistry

    NARCIS (Netherlands)

    Petrus, M.L.; Bouwer, R.K.M.; Lafont, U.; Athanasopoulos, S.; Greenham, N.C.; Dingemans, T.J.

    2014-01-01

    Conjugated small-molecule azomethines for photovoltaic applications were prepared via Schiff base condensation chemistry. Bulk heterojunction (BHJ) devices exhibit efficiencies of 1.2% with MoOx as the hole-transporting layer. The versatility and simplicity of the chemistry is illustrated by

  8. Reengineering a PC-based System into the Mobile Device Product Line

    DEFF Research Database (Denmark)

    Zhang, Weishan; Jarzabek, Stanislaw; Loughran, Neil

    2003-01-01

    devices must also perform well using less memory than PC-based systems. Mobile devices themselves are different from each other in many ways, too. We describe how we made an existing PC-based City Guide System available on a wide range of mobile devices, in a cost-effective way. We applied "reengineering...

  9. Spintronic materials and devices based on antiferromagnetic metals

    Directory of Open Access Journals (Sweden)

    Y.Y. Wang

    2017-04-01

    Full Text Available In this paper, we review our recent experimental developments on antiferromagnet (AFM spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring is realized by adopting ionic liquid. In addition, promising spin-orbit effects in AFM as well as spin transfer via AFM spin waves reported by different groups have also been reviewed, indicating that the AFM can serve as an efficient spin current source. To explore the crucial role of AFM acting as efficient generators, transmitters, and detectors of spin currents is an emerging topic in the field of magnetism today. AFM metals are now ready to join the rapidly developing fields of basic and applied spintronics, enriching this area of solid-state physics and microelectronics.

  10. Swarm Optimization-Based Magnetometer Calibration for Personal Handheld Devices

    Directory of Open Access Journals (Sweden)

    Naser El-Sheimy

    2012-09-01

    Full Text Available Inertial Navigation Systems (INS consist of accelerometers, gyroscopes and a processor that generates position and orientation solutions by integrating the specific forces and rotation rates. In addition to the accelerometers and gyroscopes, magnetometers can be used to derive the user heading based on Earth’s magnetic field. Unfortunately, the measurements of the magnetic field obtained with low cost sensors are usually corrupted by several errors, including manufacturing defects and external electro-magnetic fields. Consequently, proper calibration of the magnetometer is required to achieve high accuracy heading measurements. In this paper, a Particle Swarm Optimization (PSO-based calibration algorithm is presented to estimate the values of the bias and scale factor of low cost magnetometers. The main advantage of this technique is the use of the artificial intelligence which does not need any error modeling or awareness of the nonlinearity. Furthermore, the proposed algorithm can help in the development of Pedestrian Navigation Devices (PNDs when combined with inertial sensors and GPS/Wi-Fi for indoor navigation and Location Based Services (LBS applications.

  11. Membrane based macroencapsulation devices for improved pancreatic islet survival and function

    NARCIS (Netherlands)

    Skrzypek, Katarzyna

    2017-01-01

    The research presented in this thesis is about the development of novel membrane based macroencapsulation devices for improved pancreatic islet survival and function. To improve pancreatic islets functionality by avoiding their aggregation within macroencapsulation devices, we developed a novel

  12. 3D Printed Paper-Based Microfluidic Analytical Devices

    Directory of Open Access Journals (Sweden)

    Yong He

    2016-06-01

    Full Text Available As a pump-free and lightweight analytical tool, paper-based microfluidic analytical devices (μPADs attract more and more interest. If the flow speed of μPAD can be programmed, the analytical sequences could be designed and they will be more popular. This reports presents a novel μPAD, driven by the capillary force of cellulose powder, printed by a desktop three-dimensional (3D printer, which has some promising features, such as easy fabrication and programmable flow speed. First, a suitable size-scale substrate with open microchannels on its surface is printed. Next, the surface of the substrate is covered with a thin layer of polydimethylsiloxane (PDMS to seal the micro gap caused by 3D printing. Then, the microchannels are filled with a mixture of cellulose powder and deionized water in an appropriate proportion. After drying in an oven at 60 °C for 30 min, it is ready for use. As the different channel depths can be easily printed, which can be used to achieve the programmable capillary flow speed of cellulose powder in the microchannels. A series of microfluidic analytical experiments, including quantitative analysis of nitrite ion and fabrication of T-sensor were used to demonstrate its capability. As the desktop 3D printer (D3DP is very cheap and accessible, this device can be rapidly printed at the test field with a low cost and has a promising potential in the point-of-care (POC system or as a lightweight platform for analytical chemistry.

  13. Chalcogenide based materials and devices for flexible electronics applications

    Science.gov (United States)

    Salas-Villasenor, Ana Lizeth

    The scaling of large-area electronics for applications in flat-panel displays, digital X-ray images, and flexible electronics is pushing the technological and cost limits of conventional materials and device processing. Chemical bath deposited chalcogenide films are attractive for thin film transistors (TFTs) for large area electronics given its simple fabrication, low temperature and compatibility with most substrates. In this dissertation, we describe the development of a high performance chalcogenide based TFTs using chemical bath deposition (CBD) methods. Cadmium sulfide (CdS) and lead sulfide (PbS) are used as the TFT channel layer. The influence of several CBD parameters is studied. CBD pH and CdS film thickness have a profound influence on the TFT electrical characteristics. These parameters impact film cluster size and impurity concentration. With the optimized CdS deposition conditions TFTs with excellent electrical properties are demonstrated. With a novel photolithography approach demonstrated here, TFTs with mobilities as high as 18 cm2 /V s, Ion/Ioff of 109 and V T shift of less than 0.1 eV were fabricated. To achieve these TFTs characteristics, a variety of contact materials, gate dielectrics, annealing conditions and device structures were studied. The factors affecting VT instability for CdS based TFTs are also presented and correlated to electrode materials, gate dielectrics, and post-annealing. In summary, TFT instability is correlated to traps and impurities at the dielectric/semiconductor and/or in the semiconductor film. In addition, this dissertation demonstrates CdS TFTs integration in hybrid complementary metal-oxide-semiconductor (CMOS) circuits. In particular, logic gates and ferroelectric random access (FRAM) memory cells are demonstrated. Finally, CdS based TFTs on flexible and transparent substrates with excellent stability and mobility of 10-18 cm2/V-s, threshold voltage of 1.6-4.8 V, and Ion/Ioff ratios of 107 are demonstrated. This

  14. Vertical concentration gradients in bulk heterojunction solar cells induced by differential material solubility

    Energy Technology Data Exchange (ETDEWEB)

    Susarova, Diana K. [Institute of Problems of Chemical Physics of Russian Academy of Sciences, Semenov Prospect 1, Chernogolovka, Moscow region, 142432 (Russian Federation); Troshin, Pavel A., E-mail: troshin@cat.icp.ac.r [Institute of Problems of Chemical Physics of Russian Academy of Sciences, Semenov Prospect 1, Chernogolovka, Moscow region, 142432 (Russian Federation); Moskvin, Yuriy L.; Babenko, Sergey D. [Institute for Energy Problems of Chemical Physics, Russian Academy of Sciences (Branch), Semenov Prospect 1/10, Chernogolovka, Moscow region, 142432 (Russian Federation); Razumov, Vladimir F. [Institute of Problems of Chemical Physics of Russian Academy of Sciences, Semenov Prospect 1, Chernogolovka, Moscow region, 142432 (Russian Federation)

    2011-04-01

    Highly soluble fullerene derivatives (HSFD) and a low soluble polymer (LSP) were investigated as modifiers of the active layer morphology in conventional P3HT/PCBM bulk heterojunction solar cells. The observed changes in photovoltaic and electrical characteristics of the devices after addition of one or two modifiers suggest that they induced favourable vertical phase separation in the blends simply due to different solubilities of the components. In particular, HSFD is supposed to accumulate at the top of the film serving as a hole-blocking interlayer at the cathode/active layer interface. On the contrary, LSP seems to form electron-blocking buffer layer at the bottom of the device at the active layer/anode interface. Thus, the differential material solubility was suggested as a tool for adjustment of vertical morphology of organic bulk heterojunction solar cells.

  15. Organic–inorganic Au/PVP/ZnO/Si/Al semiconductor heterojunction characteristics

    Science.gov (United States)

    Mokhtari, H.; Benhaliliba, M.

    2017-11-01

    The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction (HJ) diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone (PVP) layers have grown by sol–gel spin-coating route at 2000 rpm. The front and back metallic contacts are thermally evaporated in a vacuum at pressure of 10-6 Torr having a diameter of 1.5 mm and a thickness of 250 nm. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Consequently, many electronic parameters, such as ideality factor, rectification coefficient, carrier concentration, series resistance, are then extracted. Based upon our results a non-ideal diode behavior is revealed and ideality factor exceeds the unity (n > 4). A high rectifying (~4.6 × 10 4) device is demonstrated. According to Cheung-Cheung and Norde calculation models, the barrier height and series resitance are respectively of 0.57 eV and 30 kΩ. Ohmic and space charge limited current (SCLC) conduction mechanisms are demonstrated. Such devices will find applications as solar cell, photodiode and photoconductor.

  16. Comparison of polymer-fullerene heterojunction morphology to bimolecular recombination kinetics

    Science.gov (United States)

    Delongchamp, Dean; Rodovsky, Deanna; Peet, Jeff; Clarke, Tracey; Mozer, Attila; Richter, Lee; Herzing, Andrew; Kline, Joseph

    2012-02-01

    One of the most important physical processes limiting the practical power conversion efficiency of bulk heterojunction (BHJ) organic photovoltaic devices is the bimolecular recombination of holes and electrons. Reduced recombination would permit the use of thicker BHJ layers, enabling greater light absorption without a penalty in device current. A few polymer light absorbers, when combined in a BHJ with a fullerene electron acceptor, exhibit recombination that is slower than Langevin-type, but the origins of this behaviour are not understood. This talk will describe our effort to determine whether slower-than-Langevin recombination can be attributed to features of the nanoscale morphology or crystalline microstructure within the BHJ film. In comparing BHJ films made from two silole-based monomers, one with Langevin recombination and one with slower-than-Langevin, we find many aspects of the BHJ material structure such as order, orientation, and nanoscale domain size and shape, to be surprisingly similar. We will compare the two materials and emphasize opportunities in data analysis and new measurements to determine whether a morphological basis underlies different recombination kinetics.

  17. Dissociating excitons photogenerated in semiconducting carbon nanotubes at polymeric photovoltaic heterojunction interfaces.

    Science.gov (United States)

    Bindl, Dominick J; Safron, Nathaniel S; Arnold, Michael S

    2010-10-26

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) have strong near-infrared and visible absorptivity and exceptional charge transport characteristics, rendering them highly attractive semiconductor absorbers for photovoltaic and photodetector technologies. However, these applications are limited by a poor understanding of how photogenerated charges, which are bound as excitons in s-SWCNTs, can be dissociated in large-area solid-state devices. Here, we measure the dissociation of excitons in s-SWCNT thin films that form planar heterojunction interfaces with polymeric photovoltaic materials using an exciton dissociation-sensitive photocapacitor measurement technique that is advantageously insensitive to optically induced thermal photoconductive effects. We find that fullerene and polythiophene derivatives induce exciton dissociation, resulting in electron and hole transfer, respectively, away from optically excited s-SWCNTs. Significantly weaker or no charge transfer is observed using wider gap polymers due to insufficient energy offsets. These results are expected to critically guide the development of thin film s-SWCNT-based photosensitive devices.

  18. Polymer:Nonfullerene Bulk Heterojunction Solar Cells with Exceptionally Low Recombination Rates

    KAUST Repository

    Gasparini, Nicola

    2017-09-01

    Organic semiconductors are in general known to have an inherently lower charge carrier mobility compared to their inorganic counterparts. Bimolecular recombination of holes and electrons is an important loss mechanism and can often be described by the Langevin recombination model. Here, the device physics of bulk heterojunction solar cells based on a nonfullerene acceptor (IDTBR) in combination with poly(3-hexylthiophene) (P3HT) are elucidated, showing an unprecedentedly low bimolecular recombination rate. The high fill factor observed (above 65%) is attributed to non-Langevin behavior with a Langevin prefactor (β/βL) of 1.9 × 10−4. The absence of parasitic recombination and high charge carrier lifetimes in P3HT:IDTBR solar cells inform an almost ideal bimolecular recombination behavior. This exceptional recombination behavior is explored to fabricate devices with layer thicknesses up to 450 nm without significant performance losses. The determination of the photoexcited carrier mobility by time-of-flight measurements reveals a long-lived and nonthermalized carrier transport as the origin for the exceptional transport physics. The crystalline microstructure arrangement of both components is suggested to be decisive for this slow recombination dynamics. Further, the thickness-independent power conversion efficiency is of utmost technological relevance for upscaling production and reiterates the importance of understanding material design in the context of low bimolecular recombination.

  19. Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime.

    Science.gov (United States)

    Bednorz, Mateusz; Matt, Gebhard J; Głowacki, Eric D; Fromherz, Thomas; Brabec, Christoph J; Scharber, Markus C; Sitter, Helmut; Sariciftci, N Serdar

    2013-05-01

    The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/p-Si/perylene-derivative/Al heterostructure exhibits a photovoltaic effect up to 2.7 μm (0.46 eV), a value significantly lower than the bandgap of either material. Although the devices are not optimized, at room temperature a rise time of 300 ns, a responsivity of ≈0.2 mA/W with a specific detectivity of D(∗) ≈ 7 × 10(7) Jones at 1.55 μm is found. The achieved responsivity is two orders of magnitude higher compared to our previous efforts [1,2]. It will be outlined that the photocurrent originates from an absorption mechanism involving excitation of an electron from the Si valence band into the extended LUMO state in the perylene-derivative, with possible participation of intermediate localized surface state in the organic material. The non-invasive deposition of the organic interlayer onto the Si results in compatibility with the CMOS process, making the presented approach a potential alternative to all inorganic device concepts.

  20. Effects of Different Solvents on the Planar Hetero-junction Perovskite Solar Cells

    Directory of Open Access Journals (Sweden)

    Lin Shunquan

    2015-01-01

    Full Text Available The perovskite (CH3NH3PbI3 films on the planar hetero-junction perovskite solar cells (PHJ-PSCs are fabricated by “two-steps” process with the wet spin-coating method. The precursor (PbI2 solutions are compounded with 4 types of solvents: N-Methyl Pyrrolidone (NMP, γ-butyrolactone (GBL, Dimethyl Sulfoxide (DMSO and N, N-dimethylformamide (DMF. All the solutions have the same concentration. The influences of different precursor solvents to the micro-structures of CH3NH3PbI3 films and device performance are studied. Atomic force microscopy (AFM and scanning electron microscope (SEM are used to characterize the CH3NH3PbI3 films. The results indicate that the CH3NH3PbI3 film using DMF solvent possesses more rough morphology and thickest thickness. The monolithic PHJ-PSCs devices based on DMF solvent are tested under a standard one sun of simulated solar irradiation (AM1.5. The results show that the open-circuit voltage (Voc reaches 872mV, the short-circuit current (Jsc reaches 9.35mA/cm2, the filling factor(FF is 0.62 and the photo-current conversion efficiency (PCE is 5.05%. DMF is the best one among these 4 types of solvents for PHJ-PSCs.

  1. Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction

    KAUST Repository

    Zhang, Chendong

    2016-01-18

    Semiconductor heterostructures are fundamental building blocks for many important device applications. The emergence of two-dimensional semiconductors opens up a new realm for creating heterostructures. As the bandgaps of transition metal dichalcogenides thin films have sensitive layer dependence, it is natural to create lateral heterojunctions (HJs) using the same materials with different thicknesses. Here we show the real space image of electronic structures across the bilayer–monolayer interface in MoSe2 and WSe2, using scanning tunnelling microscopy and spectroscopy. Most bilayer–monolayer HJs are found to have a zig-zag-orientated interface, and the band alignment of such atomically sharp HJs is of type-I with a well-defined interface mode that acts as a narrower-gap quantum wire. The ability to utilize such commonly existing thickness terraces as lateral HJs is a crucial addition to the tool set for device applications based on atomically thin transition metal dichalcogenides, with the advantage of easy and flexible implementation.

  2. Efficient solution-processed small molecule: Cadmium selenide quantum dot bulk heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Vinay, E-mail: drvinaygupta@netscape.net [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India); Department of Physics, University of California, Santa Barbara, California 93106 (United States); Upreti, Tanvi; Chand, Suresh [Physics of Energy Harvesting Division, Organic and Hybrid Solar Cell Group, CSIR-National Physical Laboratory, New Delhi-110012 (India)

    2013-12-16

    We report bulk heterojunction solar cells based on blends of solution-processed small molecule [7,7′-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2,6-diyl) bis(6-fluoro-4-(5′-hexyl-[2,2′-bithiophen]-5yl)benzo[c] [1,2,5] thiadiazole)] p-DTS(FBTTh{sub 2}){sub 2}: Cadmium Selenide (CdSe) (70:30, 60:40, 50:50, and 40:60) in the device configuration: Indium Tin Oxide /poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/p-DTS(FBTTh{sub 2}){sub 2}: CdSe/Ca/Al. The optimized ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe::60:40 leads to a short circuit current density (J{sub sc}) = 5.45 mA/cm{sup 2}, open circuit voltage (V{sub oc}) = 0.727 V, and fill factor (FF) = 51%, and a power conversion efficiency = 2.02% at 100 mW/cm{sup 2} under AM1.5G illumination. The J{sub sc} and FF are sensitive to the ratio of p-DTS(FBTTh{sub 2}){sub 2}:CdSe, which is a crucial factor for the device performance.

  3. Solvent-Mediated Crystallization of CH3NH3SnI3 Films for Heterojunction Depleted Perovskite Solar Cells.

    Science.gov (United States)

    Hao, Feng; Stoumpos, Constantinos C; Guo, Peijun; Zhou, Nanjia; Marks, Tobin J; Chang, Robert P H; Kanatzidis, Mercouri G

    2015-09-09

    Organo-lead halide perovskite solar cells have gained enormous significance and have now achieved power conversion efficiencies of ∼20%. However, the potential toxicity of lead in these systems raises environmental concerns for widespread deployment. Here we investigate solvent effects on the crystallization of the lead-free methylammonium tin triiodide (CH3NH3SnI3) perovskite films in a solution growth process. Highly uniform, pinhole-free perovskite films are obtained from a dimethyl sulfoxide (DMSO) solution via a transitional SnI2·3DMSO intermediate phase. This high-quality perovskite film enables the realization of heterojunction depleted solar cells based on mesoporous TiO2 layer but in the absence of any hole-transporting material with an unprecedented photocurrent up to 21 mA cm(-2). Charge extraction and transient photovoltage decay measurements reveal high carrier densities in the CH3NH3SnI3 perovskite device which are one order of magnitude larger than CH3NH3PbI3-based devices but with comparable recombination lifetimes in both devices. The relatively high background dark carrier density of the Sn-based perovskite is responsible for the lower photovoltaic efficiency in comparison to the Pb-based analogues. These results provide important progress toward achieving improved perovskite morphology control in realizing solution-processed highly efficient lead-free perovskite solar cells.

  4. Advanced molecular devices based on light-driven molecular motors

    NARCIS (Netherlands)

    Chen, Jiawen

    2015-01-01

    Nature has provided a large collection of molecular machines and devices that are among the most amazing nanostructures on this planet. These machines are able to operate complex biological processes which are of great importance in our organisms. Inspired by these natural devices, artificial

  5. Tunable photonic bandgap fiber based devices for optical networks

    DEFF Research Database (Denmark)

    Alkeskjold, Thomas Tanggaard; Scolari, Lara; Rottwitt, Karsten

    2005-01-01

    , for example a liquid crystal that changes optical properties when subjected to, for example, an optical or an electrical field. The utilization of these two basic properties allows design of tunable optical devices for optical networks. In this work, we focus on applications of such devices and discuss recent...

  6. Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS2van der Waals Heterojunctions.

    Science.gov (United States)

    Yang, Shengxue; Wu, Minghui; Wang, Bin; Zhao, Li-Dong; Huang, Li; Jiang, Chengbao; Wei, Su-Huai

    2017-12-06

    van der Waals heterojunctions formed by stacking various two-dimensional (2D) materials have a series of attractive physical properties, thus offering an ideal platform for versatile electronic and optoelectronic applications. Here, we report few-layer SnSe/MoS 2 van der Waals heterojunctions and study their electrical and optoelectronic characteristics. The new heterojunctions present excellent electrical transport characteristics with a distinct rectification effect and a high current on/off ratio (∼1 × 10 5 ). Such type-II heterostructures also generate a self-powered photocurrent with a fast response time (van der Waals heterojunctions are formed from a combination of a transition-metal dichalcogenide and a group IV-VI layered 2D material, thereby expanding the library of ultrathin flexible 2D semiconducting devices.

  7. Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

    2014-06-08

    In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

  8. Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application.

    Science.gov (United States)

    Kong, Wei-Yu; Wu, Guo-An; Wang, Kui-Yuan; Zhang, Teng-Fei; Zou, Yi-Feng; Wang, Dan-Dan; Luo, Lin-Bao

    2016-12-01

    A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga2 O3 ) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Optimization of direct current performance in terahertz InGaAs/InP double-heterojunction bipolar transistors

    Science.gov (United States)

    Chiang, Han-Wei; Rode, Johann C.; Choudhary, Prateek; Rodwell, Mark J. W.

    2014-10-01

    As the dimensions of In0.53Ga0.47As/InP double-heterojunction bipolar transistors (DHBTs) scale for terahertz applications, the DC current (β) decreases. To improve the DC performance in such scaled devices, we analyze three modified HBT geometries: a HBT with a surface pulse-doped layer in the base, a HBT having this pulse-doped layer under the emitter junction and under the base contact, but with it removed by etching in the region between the base and emitter contacts, and a device, necessarily fabricated by regrowth, in which the pulsed doped layer is present under only the base contacts. Based on a drift-diffusion/recombination model, carrier transport in the DHBT base is simulated and the corresponding β is computed using TCAD software. The structures with a pulse doped layer can attain β = 31 ˜ 39 at 100 nm emitter width. The structures with a trench between the base contact and emitter show β = 39 ˜ 54 at 100 nm emitter width. Finally, the structure with recessed base-emitter junction and regrown emitter demonstrate β = 62-119 at 100 nm emitter width.

  10. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui

    2013-05-29

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

  11. High-Efficiency Aqueous-Processed Polymer/CdTe Nanocrystals Planar Heterojunction Solar Cells with Optimized Band Alignment and Reduced Interfacial Charge Recombination.

    Science.gov (United States)

    Zeng, Qingsen; Hu, Lu; Cui, Jian; Feng, Tanglue; Du, Xiaohang; Jin, Gan; Liu, Fangyuan; Ji, Tianjiao; Li, Fenghong; Zhang, Hao; Yang, Bai

    2017-09-20

    Aqueous-processed nanocrystal solar cells have attracted increasing attention due to the advantage of its environmentally friendly nature, which provides a promising approach for large-scale production. The urgent affair is boosting the power conversion efficiency (PCE) for further commercial applications. The low PCE is mainly attributed to the imperfect device structure, which leads to abundant nonradiative recombination at the interfaces. In this work, an environmentally friendly and efficient method is developed to improve the performance of aqueous-processed CdTe nanocrystal solar cells. Polymer/CdTe planar heterojunction solar cells (PHSCs) with optimized band alignment are constructed, which results in reduced interfacial charge recombination, enhanced carrier collection efficiency and built-in field. Finally, a champion PCE of 5.9%, which is a record for aqueous-processed solar cells based on CdTe nanocrystals, is achieved after optimizing the photovoltaic device.

  12. A portable microkeratome-based anterior corneal surface harvesting device.

    Science.gov (United States)

    Sarayba, Melvin A; Li, Li; Sweet, Paula M; Chuck, Roy S

    2002-08-01

    To determine the reproducibility of anterior sclerokeratectomy using a portable nonelectric microkeratome-based device capable of harvesting the entire anterior corneal surface for lamellar transplantation. A modified gas turbine-driven microkeratome (LSK One, Moria/Microtech, Doylestown, PA) with a redesigned head large enough to incorporate the whole human anterior corneal surface in a pass and was coupled to a manual vacuum pump. This instrument was tested on 25 fresh porcine globes divided into 2 groups (170-microm and 200-microm head). To assess cut reproducibility the physical dimensions (diameter and thickness) of the obtained lenticules were measured. The obtained lenticules were fairly circular (horizontal versus vertical diameters, p >0.2), with average diameters of 12.85 +/- 0.52 mm and 13.25 +/- 1.15 mm for the 170 and 200-microm heads, respectively. The average central lenticule thickness was 176.92 +/- 34.68 microm and 166.00 +/- 53.74 microm for the 170 and 200-microm heads, respectively. This new system presents an economical and portable alternative to electric-powered systems. In addition to being used by surgeons in the operating room, eye bank technicians in the field could theoretically use this system; including in developing countries where cost, availability of electricity, and portability are issues.

  13. Continuous Size-Based Particle Separation in a Microfluidic Device

    Science.gov (United States)

    Shaparenko, Barukyah; Chuang, Han-Sheng; Hu, Howard; Bau, Haim; Worthen, George

    2010-11-01

    Pinched flow fractionation is a continuous particle sorting technique in which two streams (one with particles, the other without particles) are manipulated to meet and then flow collinearly through a pinched microchannel. Due to geometric constraints, the particles align at different positions relative to the channel wall, with smaller particles closer to the wall than larger particles. Following the pinched segment, the channel broadens significantly, and the differences in particle positions are amplified as the particles follow the diverging fluid streamlines and are separated into different outlet channels based on their sizes. We analyze the separation of 2 and 10 μm rigid spherical particles with a pinched segment of 40 μm width, comparing 2D computational results and experimental results. We control the separation by specifying an inlet flow rate ratio and one outlet flow rate. We optimize the channel geometry and determine the operating parameters necessary to achieve effective particle separation. Multiple stages of such separation components can be integrated for finer separations. Other separation mechanisms, like dielectrophoresis, can also be integrated into the device using field flow fractionation, in which an external field is applied perpendicular to the direction of flow, causing the particles to cross fluid streamlines.

  14. Optimalization activity of ZnO NR/TiO2 NR-P3HT as an active layer based on hybrid bulk heterojunction on dye sensitized solar cell (DSSC)

    Energy Technology Data Exchange (ETDEWEB)

    Saputri, Liya Nikmatul Maula Zulfa; Ramelan, Ari Handono; Hanif, Qonita Awliya; Hasanah, Yesi Ihdina Fityatal; Prajanira, Lau Bekti; Wahyuningsih, Sayekti, E-mail: sayektiw@mipa.uns.ac.id [Chemistry Department, Faculty of Mathematics and Natural Sciences, Sebelas Maret University, Ir.Sutami 36A Kentingan Surakarta 57/26, Central Java (Indonesia)

    2016-04-19

    Dye sensitized solar cell (DSSC) with metal inorganic and conjugated organic polymer mixture, ZnO NR/TiO{sub 2} NR-P3HT as an active layer based on hybrid bulk heterojunction has been studied. The hybrid material was used to optimize DSSC performs for better efficiency than only TiO{sub 2} as an electrode. Synthesis of TiO{sub 2} nanorods (NR) was conducted by ball milling 1000 rpm for 4 hours and strong base reaction by hydrothermal process at 120 °C overnight. And the ZnO NR was synthesized from Zn(NO{sub 3}){sub 2}.4H{sub 2}O precusor by hydrotermal process at 90 °C for 5 hours and calcined on various temperature s of 400, 600, and 800 °C. ZnO NR was coated into an Tndium Tin Oxide (TTO) glass to collecting electron s effectively, where TiO{sup 2} NR were incorporated with poly(3 -hexylthiophene) (P3HT) on various concentration s of 5, 10, 15 mg/mL to obtain a larger surface area. Material characterization were performed by X -Ray Diffraction (XRD) and Uv-Vis spectrophotometer. For an application of DSSC were measured by T-V Keithley Multimeter and the efficiency of DSSC at various P3HT’s concentrations of 5, 10, 15 mg/mL were 7.44 × 10{sup −3}, 0.0114, 0.0104, respectively. The maximum efficiency of DSSC was showed when TiO{sup 2} NR-P3HT’s concentration was 10 mg/mL.

  15. Highly efficient charge generation and electron injection of m-MTDATA/m-MTDATA:HAT-CN/HAT-CN organic heterojunction on ITO cathode for high efficiency inverted white organic light-emitting diodes

    Science.gov (United States)

    Wang, Xiaoli; Shi, Changsheng; Guo, Qingxun; Chen, Jiangshan; Qiao, Xianfeng; Ma, Dongge; Ahamad, Tansir; Alshehri, Saad M.; Bae, Sang Soon

    2017-09-01

    The charge generation and electron injection characteristics of m-MTDATA/m-MTDATA:HAT-CN/HAT-CN organic heterojunction made of 4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA) p-type organic semiconductor and 1,4,5,8,9,12-hexaazatriphenylene-hexacarbonitrile (HAT-CN) n-type semiconductor were well studied. It was found that m-MTDATA/m-MTDATA:HAT-CN/HAT-CN organic heterojunction showed better charge generation ability than m-MTDATA/HAT-CN organic heterojuntion, and realized highly efficient electron injection when using it as charge generator on indium tin oxide (ITO) cathode. The investigations of capacitance-frequency and current density-voltage characteristics of the electron-only devices based on m-MTDATA/m-MTDATA:HAT-CN/HAT-CN organic heterojunction demonstrated that the amounts of the injected electrons were dependent on the properties of the used n-doping electron transporting layer (n-ETL). Therefore, by optimization, high efficiency inverted white organic light-emitting diodes (OLEDs) with ITO as cathode were successfully fabricated using m-MTDATA/m-MTDATA:HAT-CN/HAT-CN organic heterojunction as charge injector and lithium carbonate (Li2CO3) doped bathophenanthroline (BPhen) as n-ETL. The resulting inverted white OLEDs achieved the maximum external quantum efficiency of 12.9%, current efficiency of 42.6 cd/A and power efficiency of 50.5 lm/W, and still remained 12.5%, 41.0 cd/A and 45.0 lm/W at the luminance of 1000 cd/m2, respectively, exhibiting extremely low efficiency roll-off.

  16. Understanding the Role of Additives in Improving the Performance of Polymer:Fullerene Bulk Heterojunction Solar Cells

    Science.gov (United States)

    Chen, Wei

    2014-03-01

    Solar cells based on the polymer:fullerene bulk heterojunction (BHJ) represent one of the most promising technologies for next-generation solar energy conversion due to their low-cost and scalability. In the last fifteen years, research efforts have led to organic photovoltaic (OPV) devices with power conversion efficiencies (PCEs) ~ 12%, but these values are still insufficient for the devices to become widely marketable. To further improve solar cell performance, a thorough understanding of the complex processing-structure-performance relationships in OPV devices is required. Recently, the use of processing additives have been proved to be one of the most effective methods to tune the nanomorphology of polymer:fullerene active layer, as the incorporation of a small percentage of solvent additives results in a nearly doubling of device efficiency. However, the physics behind these improved performances by processing additives still remains unclear. In this work, by taking advantage of resonant soft x-ray scattering (RSoXS) and energy-filtered transmission electron microscopy (EFTEM), we have determined that the solvent additives induce the change in the formation mechanism of polymer:fullerene nanomorphologies in the process of film casting. Progress established in the course of these studies on structural and morphological characterizations will serve as the foundation for further improving the efficiency of polymer solar cells to realize their large-scale commercial use.

  17. Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

    Science.gov (United States)

    Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

    2017-08-09

    We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (VOC), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the VOC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the VOC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing VOC, thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

  18. Fast Configuration of MEMS-Based Storage Devices for Streaming Applications

    NARCIS (Netherlands)

    Khatib, M.G.; van Dijk, H.W.

    2009-01-01

    An exciting class of storage devices is emerging: the class of Micro-Electro-Mechanical storage Systems (MEMS). Properties of MEMS-based storage devices include high density, small form factor, and low power. The use of this type of devices in mobile infotainment systems, such as video cameras is

  19. Efficacy of Low-Cost PC-Based Aviation Training Devices

    Science.gov (United States)

    Reweti, Savern; Gilbey, Andrew; Jeffrey, Lynn

    2017-01-01

    Aim/Purpose: The aim of this study was to explore whether a full cost flight training device (FTD) was significantly better for simulator training than a low cost PC-Based Aviation Training Device (PCATD). Background: A quasi-transfer study was undertaken to ascertain whether a Civil Aviation Authority certified Flight Training Device (FTD) was…

  20. Magnet-based Around Device Interaction for Playful Music Composition and Gaming

    NARCIS (Netherlands)

    El Ali, A.; Ketabdar, H.

    2013-01-01

    Around Device Interaction (ADI) has expanded the interaction space on mobile devices to allow 3D gesture interaction around the device. In this paper, the authors look specifically at magnet-based ADI and its applied use in a playful, music-related context. Using three musical applications developed

  1. Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing

    Science.gov (United States)

    Georgiadou, D. G.; Ulmeanu, M.; Kompitsas, M.; Argitis, P.; Kandyla, M.

    2014-12-01

    We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed on the surface of the substrates. A thin (80 nm) layer of ZnO was deposited on the laser-processed silicon surface by pulsed laser deposition, forming a nanostructured p-Si/n-ZnO heterojunction. We characterized the structural, optical, and electrical properties of the heterojunction. Electrical I-V measurements on the nanostructured p-Si/n-ZnO device show non-linear electric characteristics with a diode-like behavior. Electrical I-V measurements on a flat p-Si/n-ZnO reference sample show similar characteristics, however the forward current and rectification ratio are improved by orders of magnitude in the nanostructured device owing to its increased surface area. The fabrication method employed in this work can be extended to other homojunctions or heterojunctions for electronic and optoelectronic devices with large surface area.

  2. Efficient quantum transport simulation for bulk graphene heterojunctions

    Science.gov (United States)

    Liu, Ming-Hao; Richter, Klaus

    2012-09-01

    The quantum transport formalism based on tight-binding models is known to be powerful in dealing with a wide range of open physical systems subject to external driving forces but is, at the same time, limited by the memory requirement's increasing with the number of atomic sites in the scattering region. Here we demonstrate how to achieve an accurate simulation of quantum transport feasible for experimentally sized bulk graphene heterojunctions at a strongly reduced computational cost. Without free tuning parameters, we show excellent agreement with a recent experiment on Klein backscattering [A. F. Young and P. Kim, Nature Phys.1745-247310.1038/nphys1198 5, 222 (2009)].

  3. Spin-cast bulk heterojunction solar cells: A dynamical investigation

    KAUST Repository

    Chou, Kang Wei

    2013-02-22

    Spin-coating is extensively used in the lab-based manufacture of organic solar cells, including most of the record-setting solution-processed cells. We report the first direct observation of photoactive layer formation as it occurs during spin-coating. The study provides new insight into mechanisms and kinetics of bulk heterojunction formation, which may be crucial for its successful transfer to scalable printing processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Topographic analysis of silicon nanoparticles-based electroluminescent devices

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, A., E-mail: amorales@inaoep.mx [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico); Barreto, J.; Dominguez, C. [Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC), Barcelona (Spain); Aceves, M.; Leyva, K.M. [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico); Luna-Lopez, J.A.; Carrillo, J. [CIDS-BUAP, Apdo. 1651, Puebla 72000 (Mexico); Pedraza, J. [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico)

    2010-10-25

    Electroluminescent properties of silicon nanoparticles embedded in MOS devices have been studied. Silicon rich oxide (SRO) films with 4 at.% of silicon excess were used as active layers. Intense and stable light emission is observed with the naked eye as shining spots at the surface of devices. AFM measurements on these devices exhibit a remarkably granular surface where the EL spots are observed. The EL measurements show a broad visible spectrum with various peaks between 420 and 870 nm. These EL spots are related with charge injection through conductive paths created by adjacent Si-nps within the SRO.

  5. Fundamentals of photoelectric effects in molecular electronic thin film devices: applications to bacteriorhodopsin-based devices.

    Science.gov (United States)

    Hong, F T

    1995-01-01

    This tutorial lecture focuses on the fundamental mechanistic aspects of light-induced charge movements in pigment-containing membranes. The topic is relevant to molecular electronics because many prototypes optoelectronic devices are configured as pigment-containing thin films. We use reconstituted bacteriorhodopsin membranes as an example to illustrate the underlying principle of measurements and data interpretation. Bacteriorhodopsin, a light-driven proton pump, is the only protein component in the purple membrane of Halobacterium halobium. It resembles the visual pigment rhodopsin chemically but performs the function of photosynthesis. Bacteriorhodopsin thus offers an unprecedented opportunity for us to compare the visual photoreceptor and the photosynthetic apparatus from a mechanistic point of view. Bacteriorhodopsin, well known for its exceptional chemical and mechanical stability, is also a popular advanced biomaterial for molecular device construction. The tutorial approaches the subject from two angles. First, the fundamental photoelectric properties are exploited for device construction. Second, basic design principles for photosensors and photon energy converters can be elucidated via 'reverse engineering'. The concept of molecular intelligence and the principle of biomimetic science are discussed.

  6. Reprogammable universal logic device based on mems technology

    KAUST Repository

    Hafiz, Md Adbdullah Al

    2017-06-15

    Various examples of reprogrammable universal logic devices are provided. In one example, the device can include a tunable AC input (206) to an oscillator/resonator; a first logic input and a second logic input to the oscillator/resonator, the first and second logic inputs provided by separate DC voltage sources (VA, VB), each of the first and second logic inputs including an on/off switch (A, B); and the oscillator/resonator including an output terminal (215). The tunable oscillator/resonator can be a MEMS/NEMS resonator. Switching of one or both of the first or second logic inputs on or off in association with the tuning of the AC input (206) can provide logic gate operation. The device can easily be extended to a 3-bit or n-bit device by providing additional logic inputs. Binary comparators and encoders can be implemented using a plurality of oscillators/resonators.

  7. Single-atom based coherent quantum interference device structure.

    Science.gov (United States)

    Naydenov, Borislav; Rungger, Ivan; Mantega, Mauro; Sanvito, Stefano; Boland, John J

    2015-05-13

    We describe the fabrication, operation principles, and simulation of a coherent single-atom quantum interference device (QID) structure on Si(100) controlled by the properties of single atoms. The energy and spatial distribution of the wave functions associated with the device are visualized by scanning tunneling spectroscopy and the amplitude and phase of the evanescent wave functions that couple into the quantum well states are directly measured, including the action of an electrostatic gate. Density functional theory simulations were employed to simulate the electronic structure of the device structure, which is in excellent agreement with the measurements. Simulations of device transmission demonstrate that our coherent single-atom QID can have ON-OFF ratios in excess of 10(3) with potentially minimal power dissipation.

  8. Absorbance based light emitting diode optical sensors and sensing devices

    OpenAIRE

    Dermot Diamond; Martina O’Toole

    2008-01-01

    The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied i...

  9. Printed Biopolymer-Based Electro-Optic Device Components

    Science.gov (United States)

    2013-07-01

    Coupling light into planar waveguide structures using optical fiber or prism coupler is a slow and tedious process. The goal of this project was to...Grating Couplers ...................... 6 Figure 6: Schematic of a Test Device for Coupling Efficiency Measurement .............................. 6...Schematic Diagram of the Waveguide Structure with Grating Couplers 2.4. Printing DNA-CTMA Grating Structure The device configuration proposed by Dr

  10. Effective Surface Conductivity Approach for Graphene Metamaterials Based Terahertz Devices

    DEFF Research Database (Denmark)

    Andryieuski, Andrei; Pizzocchero, Filippo; Booth, Tim

    2013-01-01

    We propose a description of graphene metamaterials properties through the effective surface conductivity. On the example of tunable absorber we demonstrate that this approach allows for fast and efficient design of functional terahertz devices.......We propose a description of graphene metamaterials properties through the effective surface conductivity. On the example of tunable absorber we demonstrate that this approach allows for fast and efficient design of functional terahertz devices....

  11. Optimizing the fabrication process and interplay of device components of polymer solar cells using a field-based multiscale solar-cell algorithm.

    Science.gov (United States)

    Donets, Sergii; Pershin, Anton; Baeurle, Stephan A

    2015-05-14

    Both the device composition and fabrication process are well-known to crucially affect the power conversion efficiency of polymer solar cells. Major advances have recently been achieved through the development of novel device materials and inkjet printing technologies, which permit to improve their durability and performance considerably. In this work, we demonstrate the usefulness of a recently developed field-based multiscale solar-cell algorithm to investigate the influence of the material characteristics, like, e.g., electrode surfaces, polymer architectures, and impurities in the active layer, as well as post-production treatments, like, e.g., electric field alignment, on the photovoltaic performance of block-copolymer solar-cell devices. Our study reveals that a short exposition time of the polymer bulk heterojunction to the action of an external electric field can lead to a low photovoltaic performance due to an incomplete alignment process, leading to undulated or disrupted nanophases. With increasing exposition time, the nanophases align in direction to the electric field lines, resulting in an increase of the number of continuous percolation paths and, ultimately, in a reduction of the number of exciton and charge-carrier losses. Moreover, we conclude by modifying the interaction strengths between the electrode surfaces and active layer components that a too low or too high affinity of an electrode surface to one of the components can lead to defective contacts, causing a deterioration of the device performance. Finally, we infer from the study of block-copolymer nanoparticle systems that particle impurities can significantly affect the nanostructure of the polymer matrix and reduce the photovoltaic performance of the active layer. For a critical volume fraction and size of the nanoparticles, we observe a complete phase transformation of the polymer nanomorphology, leading to a drop of the internal quantum efficiency. For other particle-numbers and -sizes

  12. Thin film tandem solar cells based on CuInSe/sub 2/

    Energy Technology Data Exchange (ETDEWEB)

    Meakin, J.D.; Birkmire, R.W.; DiNetta, L.C.; Lasswell, P.G.; Phillips, J.E.

    1986-01-15

    The CuInSe/sub 2//(CdZn)S heterojunction is the best developed low bandgap solar cell for use in a two-junction tandem device. The potential performance of large area terrestrial systems based on this junction is reviewed. A monolithic tandem cell in which the high bandgap cell is a (CdHg)Te/CdS heterojunction deposited onto a CuInSe/sub 2//(CdZn)S cell is being developed and progress with this system is described.

  13. A computer analysis of heterojunction and graded composition solar cells

    Science.gov (United States)

    Sutherland, J. E.; Hauser, J. R.

    1977-01-01

    The development and application of a variable composition solar cell computer analysis program is discussed. The basic device equations are derived and results of the computer analysis of several Al(x)Ga(1-x)As and GaAs(1-x)P(x) solar cell structures are presented along with a discussion of the effects of interface states and various composition and doping profiles on maximum solar cell efficiency. Interface states are found to be responsible for a severe reduction in the efficiency of GaAs(1-x)P(x) cells, but do not significantly affect the behavior of Al(x)Ga(1-x)As cells. The depth of the p-n junction below the wide bandgap window layer is a critical factor in determining the loss of minority carriers to interface recombination at the heterojunction.

  14. Plasmonic ZnO/p-silicon heterojunction solar cell

    Science.gov (United States)

    Shokeen, Poonam; Jain, Amit; Kapoor, Avinashi

    2017-05-01

    A ZnO/p-Si heterojunction solar cell has been fabricated by sol-gel technique. Silver nanostructures have been deposited on the top surface of the cell by pulsed laser deposition (PLD) system. Silver nanoparticles show strong surface plasmon resonance at 500 nm and improve the overall absorbance of the cell. Deposition of silver nanoparticles on the top surface of the solar cell quenches the photoluminescence and indicates an effective scattering of incident light into the absorber layer. A solar cell containing silver nanoparticles shows fivefold improvement in short circuit current density in comparison to a pristine cell. Finite-difference time-domain (FDTD) simulations illustrate the effect of silver nanoparticles on the performance of the solar cell. The total quantum efficiency (TQE) of the device shows a Gaussian curve with the aspect ratio (diameter: interspacing) of nanoparticles. Optimized distribution of silver nanoparticles can improve the light trapping capabilities of various thin-film solar cells.

  15. Quantum transport in nanowire-based hybrid devices

    Energy Technology Data Exchange (ETDEWEB)

    Guenel, Haci Yusuf

    2013-05-08

    the Andreev reflection of quasiparticles at single interface, by suppressing the superconductivity of Al with small magnetic fields, as well as at double interface for zero magnetic field. The junction geometry was further changed by replacing the InAs nanowire with the InAs tube. In this case the GaAs/InAs core/shell tubular nanowires were contacted by two superconducting Nb electrodes. For this junction geometry we have demonstrated the interference of phase conjugated electron-hole pairs in the presence of coaxial magnetic. The effect of temperature, constant dc bias current and gate voltage on the magnetoresistance oscillations were examined. In the last part of this thesis, we have fabricated and characterized the single crystal Au nanowire-based proximity superconducting quantum interference device (SQUID).

  16. 78 FR 36698 - Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for Mycobacterium tuberculosis

    Science.gov (United States)

    2013-06-19

    ... Nucleic Acid-Based Systems for Mycobacterium tuberculosis Complex in Respiratory Specimens AGENCY: Food...) is proposing to reclassify nucleic acid-based in vitro diagnostic devices for the detection of... Controls Guideline: Nucleic Acid-Based In Vitro Diagnostic Devices for the Detection of Mycobacterium...

  17. Carbonitride based phosphors and light emitting devices using the same

    Science.gov (United States)

    Li, Yuanqiang; Tian, Yongchi; Romanelli, Michael Dennis

    2013-08-20

    Disclosed herein is a novel group of carbidonitride phosphors and light emitting devices which utilize these phosphors. In certain embodiments, the present invention is directed to a novel family of carbidonitride-based phosphors expressed as follows: Ca.sub.1-xAl.sub.x-xySi.sub.1-x+xyN.sub.2-x-xyC.sub.xy:A; (1) Ca.sub.1-x-zNa.sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xyC.sub.xy:- A; (2) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x- -xyC.sub.xy:A; (3) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3C.sub.xyO.sub.w-v/2H.sub.v:A; and (4) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3-v/3C.sub.xyO.sub.wH.sub.v:A, (4a) wherein 0xy+z, and 0

  18. Consequences of Anode Interfacial Layer Deletion. HCl-Treated ITO in P3HT:PCBM-Based Bulk-Heterojunction Organic Photovoltaic Devices

    Science.gov (United States)

    2010-01-01

    rpm for 60 s and then at 2000 rpm for 1 s (thickness = 200-220 nm). The still-wet films were immediately transferred from the spin - coater chuck to...hexanes. The solvent 1,2-dichlor- obenzene (Drisolv) for spin -coating was purchased from EMD, distilled from P2O5 under anaerobic conditions, and...and H2O), and then the active layer solution was spin -coated onto bare ITO, ITO/PED- OT:PSS, and/or HCl-treated ITO anodes in sequential steps at 550

  19. Electrical characterization of DC sputtered ZnO/p-Si heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Ocak, Yusuf Selim, E-mail: yusufselim@gmail.com [Department of Science, Faculty of Education, Dicle University, Diyarbakir, 21280 (Turkey)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer DC sputtered ZnO thin films were grown on a p-Si wafer and a glass and their orientation (0 0 2) and optical band gap (3.28 eV) were determined. Black-Right-Pointing-Pointer Electrical parameters of ZnO/p-Si heterojunction such as ideality factor, barrier height and series resistance were calculated as 1.35, 0.76 eV and 6.69 k{Omega} Dot-Operator Black-Right-Pointing-Pointer The effects of light on current-voltage, capacitance-voltage and capacitance-frequency properties of the ZnO/p-Si heterojunction were examined under 100 mW/cm{sup 2} and AM 1.5 illumination conditions. - Abstract: ZnO thin films were formed on a p-Si semiconductor and a glass by DC sputtering technique. The ZnO films were analyzed using UV-vis spectroscopy and X-ray diffraction (XRD). Electrical and photoelectrical parameters of ZnO/p-Si heterojunction were determined by current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) of the device in dark and under the light with 100 mW/cm{sup 2} and AM 1.5 illumination property. The device had a good rectifying property with 1.35 ideality factor, 0.76 eV barrier height and 6.69 k{Omega} series resistance values. It was seen that I-V, C-V and C-f measurements of the heterojunction had good sensitivity to the light and the device behaves as a photodiode and a photocapacitor.

  20. Phthalocyanine Blends Improve Bulk Heterojunction Solar Cells

    Science.gov (United States)

    Varotto, Alessandro; Nam, Chang-Yong; Radivojevic, Ivana; Tomé, Joao; Cavaleiro, José A.S.; Black, Charles T.; Drain, Charles Michael

    2010-01-01

    A core phthalocyanine platform allows engineering the solubility properties the band gap; shifting the maximum absorption toward the red. A simple method to increase the efficiency of heterojunction solar cells uses a self-organized blend of the phthalocyanine chromophores fabricated by solution processing. PMID:20136126