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Sample records for hemt active gilbert

  1. Conversion Matrix Analysis of GaAs HEMT Active Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

    2006-01-01

    In this paper, the nonlinear model of the GaAs HEMT active Gilbert cell mixer is investigated. Based on the model, the conversion gain expression of active Gilbert cell mixers is derived theoretically by using conversion matrix analysis method. The expression is verified by harmonic balance simul...

  2. Gilbert\\'s Syndrome

    Directory of Open Access Journals (Sweden)

    Erkan Cure

    2014-04-01

    Full Text Available Gilbert\\'s syndrome (GS is a benign condition that does not progress to chronic liver disease or fibrosis. GS diagnosis should be considered in patients with chronic elevation of unconjugated bilirubin. In these patients the presence of hemolysis and other diseases of the liver should be excluded. GS is an autosomal recessive disease. The mutation of UDP-glucuronyl transferase is seen in 10-16% of the population. There is a 70-80% decrease in bilirubin glucuronidation. In cases of unexplained indirect hyperbilirubinemia with no history of drugs, smoking or alcohol use, GS should be considered. Firstly, hemolysis should be excluded. It has been reported that having increased levels of indirect bilirubin lowers the incidence of carotid plaque and coronary artery disease in patients of GS. The antioxidation and resistance to oxidative stress status of patients with GS is known to be high. However, GS is associated with breast and colon cancer. Several studies have reported that liver transplantation from a patient with GS had no harm to himself or to the recipient. An exact relationship between schizophrenia and GS has not been demonstrated. GS patients have a risk of breast and colon cancer so frequent follow up may be recommended.

  3. Gilbert's Syndrome

    Science.gov (United States)

    ... not know you have the condition until it's discovered by accident, such as when a blood test ... chemotherapy drug Some protease inhibitors used to treat HIV If you have Gilbert's syndrome, talk to your ...

  4. Antimalarial Activity of the Chemical Constituents of the Leaf Latex of Aloe pulcherrima Gilbert and Sebsebe.

    Science.gov (United States)

    Teka, Tekleab; Bisrat, Daniel; Yeshak, Mariamawit Yonathan; Asres, Kaleab

    2016-10-28

    Malaria is one of the three major global public health threats due to a wide spread resistance of the parasites to the standard antimalarial drugs. Considering this growing problem, the ethnomedicinal approach in the search for new antimalarial drugs from plant sources has proven to be more effective and inexpensive. The leaves of Aloe pulcherrima Gilbert and Sebsebe, an endemic Ethiopian plant, are locally used for the treatment of malaria and other infectious diseases. Application of the leaf latex of A. pulcherrima on preparative silica gel TLC led to the isolation of two C -glycosylated anthrones, identified as nataloin ( 1 ) and 7-hydroxyaloin ( 2 ) by spectroscopic techniques (UV, IR, ¹H- and 13 C-NMR, HR-ESIMS). Both the latex and isolated compounds displayed antimalarial activity in a dose-independent manner using a four-day suppressive test, with the highest percent suppression of 56.2% achieved at 200 mg/kg/day for 2 . The results indicate that both the leaf latex of A. pulcherrima and its two major constituents are endowed with antiplasmodial activities, which support the traditional use of the leaves of the plant for the treatment of malaria.

  5. High-frequency detection of cell activity of Physarum polycephalum by a planar open gate AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Witte, Hartmut; Lippelt, Thomas; Warnke, Christian; Dadgar, Armin; Krost, Alois; Hauser, Marcus J B

    2014-01-01

    The dynamics of cells of the slime mould Physarum polycephalum are investigated with a planar AlGaN/GaN high electron mobility transistor (HEMT) without any gate metallization. The source–drain contacts are used in a two-electrode arrangement whereas the free gate surface area is occupied by the Physarum cell. In order to understand the measured signals, basic properties of the interface between the cell and the HEMT surface were analysed by impedance spectroscopy. At high frequencies the interface impedance is governed by the conductance of the cell due to a direct current through the HEMT/cell interface. The locomotive dynamics of Physarum were recorded by the source–drain impedance at 10 kHz in combination with simultaneous video imaging that monitored the degree of occupancy of the HEMT surface by the cell. A precise correlation was found between the impedance and the coverage of the HEMT surface by the cell. It is observed that the entire region between the contacts is sensitive to the cell activity. Well-resolved cellular oscillations were observed for all measured parameters. Their periods corresponded to the typical periods of the intracellular shuttle streaming of protoplasma in Physarum. This demonstrates that high-frequency impedance measurements with AlGaN/GaN HEMT structures are well suited for the analysis of both the static parts of single Physarum cells as well as of their dynamic behaviour, such as their expansion and motility. (paper)

  6. Lewis, Prof. Gilbert Newton

    Indian Academy of Sciences (India)

    Home; Fellowship. Fellow Profile. Elected: 1935 Honorary. Lewis, Prof. Gilbert Newton. Date of birth: 25 October 1875. Date of death: 24 March 1946. YouTube; Twitter; Facebook; Blog. Academy News. IAS Logo. 29th Mid-year meeting. Posted on 19 January 2018. The 29th Mid-year meeting of the Academy will be held ...

  7. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core...

  8. Conversion Matrix Analysis of SiGe HBT Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2004-01-01

    The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the Gilbert cell mixer is taken into account by applying conversion matrix analysis. The main bandwidth limiting mechanisms experienced in SiGe HBT Gilbert ...

  9. Gilbert PECHEUR 1947-2008

    CERN Multimedia

    HR Department

    2008-01-01

    We deeply regret to announce the death of Mr Gilbert PECHEUR on 17.02.2008. Mr Gilbert PECHEUR, born on 04.11.1947 worked in the AB Department and had been employed at CERN since 01.09.1971. The Director-General has sent his family a message of condolence on behalf of the CERN staff. Social Affairs Human Resources Department

  10. Gilbert PECHEUR 1947-2008

    CERN Multimedia

    2008-01-01

    We deeply regret to announce the death of Mr Gilbert PECHEUR on 17.02.2008. Mr Gilbert PECHEUR, born on 04.11.1947, worked in the AB Department and had been employed at CERN since 01.09.1971. The Director-General has sent his family a message of condolence on behalf of the CERN staff. Social Affairs Human Resources Department

  11. 2016 Gilbert W. Beebe symposium

    Science.gov (United States)

    The National Academies of Sciences, Engineering, and Medicine is hosting the 2016 Gilbert W. Beebe Symposium. Its focus will be on commemorating the 1986 Chernobyl nuclear reactor accident and discussing the achievements of 30 years of studies on the radiation health effects following the accident and future research directions.

  12. Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

    OpenAIRE

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten; Vidkjær, Jens

    2005-01-01

    We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 2...

  13. Anestesia em paciente com síndrome de Gilbert: relato de caso Anestesia en paciente con síndrome de Gilbert: relato de caso Anesthesia in a patient with Gilbert's syndrome: case report

    Directory of Open Access Journals (Sweden)

    Fabiano Timbó Barbosa

    2004-06-01

    forma segura sin el aparecimiento de toxicidad desde que sean evitados los factores que puedan llevar a la diminución de la actividad de la glicuroniltransferasis.BACKGROUND AND OBJECTIVES: Gilbert's syndrome is a chronic benign disease leading to recurrent jaundice and major unconjugated bilirubin increase that may be toxic after the use of routine medication. This report aimed at describing the anesthetic approach in Gilbert's syndrome patient submitted to videolaparoscopic surgery. CASE REPORT: Female patient, 22 years old with Gilbert's syndrome, submitted to videolaparoscopic surgery under general anesthesia with propofol, alfentanil, succinylcholine, atracurium and isoflurane. There were no evidences of toxicity during anesthesia. Postoperative recovery was satisfactory and patient was discharged three days later. CONCLUSIONS: Gilbert's syndrome patients may be safely submitted to general anesthesia without toxicity, provided factors leading to glucuronosyltransferase activity decrease are avoided.

  14. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng

    2018-01-01

    . The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common-mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L......In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices...... are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four-layer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained...

  15. Duchenne Müsküler Distrofi ve Gilbert"s Sendromu Birlikteliği: Bir Olgu Sunumu

    OpenAIRE

    İncecik, Faruk; Hergüner, Özlem M.; Mert, Gülen; Horoz, Özden; Altunbaşak, Şakir

    2013-01-01

    Gilbert"s syndrome is characterized by unconjugated hyperbilirubinemia. A 5-year-old boy presented to our hospital with mild hyperbilirubinemia. The patient had persistent unconjugated hyperbilirubinemia with high liver enzymes and creatine phosphokinase. Haemolysis was excluded by normal haemoglobin, and reticulocyte count and finally he was diagnosed to have Gilbert"s syndrome. His creatine kinase concentration was 15600 U/l, and he had a deletion in the dystrophin gene. Finally, the patien...

  16. Duchenne Müsküler Distrofi ve Gilbert"s Sendromu Birlikteliği: Bir Olgu Sunumu

    OpenAIRE

    İncecik, Faruk; Hergüner, Özlem M.; Mert, Gülen; Horoz, Özden; Altunbaşak, Şakir

    2014-01-01

    Gilbert"s sendromu konjuge olmayan hiperbilirubinemi ile karekterize bir hastalıktır. 5 yaşında erkek çocuğu hafif sarılık ile hastanemize getirildi. Hastanın karaciğer enzimleri ve kreatin fosfokinaz yüksekliği ile beraber ısrarcı unkonjuge hiperbilirubinemisi vardı. Normal hemoglobin ve retikülosit değerleri ile hemoliz dışlandı ve Gilbert"s sendromu tanısı konuldu. Kreatin kinaz değeri 15600 U/l idi ve distrofin geninde delesyon mevcuttu. Sonuç olarak hastaya Gilbert"s sendr...

  17. Gilbert ja George lasevad oma kunstiteose alla laadida

    Index Scriptorium Estoniae

    2007-01-01

    9.05.2007 öösel on kõigil soovijail võimalik tasuta interneti vahendusel omandada Londonis tegutseva kunstnikepaari Gilbert & George (Gilbert Proesch ja George Passmore) teos "Planed". Aadressid: www.bbc.co.uk/imagine ja www.guardian.co.uk/art

  18. AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

    International Nuclear Information System (INIS)

    Witte, H; Warnke, C; Krost, A; Voigt, T; De Lima, A; Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K

    2011-01-01

    Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO x isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

  19. AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures

    Energy Technology Data Exchange (ETDEWEB)

    Witte, H; Warnke, C; Krost, A [Institute of Experimental Physics, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany); Voigt, T; De Lima, A [Institute for Physiology, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany); Ivanov, I; Vidakovic-Koch, T R; Sundmacher, K, E-mail: hartmut.witte@physik.uni-magdeburg.de [Process Systems Engineering, Otto-von-Guericke-University-Magdeburg, Magdeburg (Germany)

    2011-09-07

    Unipolar source-drain voltage pulses of GaN/AlGaN-high electron mobility transistors (HEMTs) were used for stimulation of cultured neuronal networks obtained from embryonic rat cerebral cortex. The HEMT sensor was grown by metal organic vapour phase epitaxy on a 2 inch sapphire substrate consisting of 10 single HEMTs concentrically arranged around the wafer centre. Electrolytic reactions between the HEMT sensor surface and the culture medium were not detected using cyclic voltammetry. During voltage pulses and resulting neuronal excitation, capacitances were recharged giving indications of the contributions of the AlGaN and AlO{sub x} isolation layers between the two-dimensional electron gas channel and the neuron culture. The resulting threshold current for stimulation of neuron activity strongly depended on the culture and HEMT position on the sensor surface under consideration which was caused by different impedances of each neuron culture and position within the culture. The differences of culture impedances could be explained by variations of composition, thickness and conductivity of the culture areas.

  20. "The nature of morality‟ in Gilbert Harman: As appraisal | Oyedola ...

    African Journals Online (AJOL)

    "The nature of morality‟ in Gilbert Harman: As appraisal. ... characteristic of scientific beliefs, as espoused by Harman has not undermined the nature of ... Nevertheless, the study concedes that the fact that liar man's grounds are appealing, his ...

  1. Calculation of Gilbert damping in ferromagnetic films

    Directory of Open Access Journals (Sweden)

    Edwards D. M.

    2013-01-01

    Full Text Available The Gilbert damping constant in the phenomenological Landau-Lifshitz-Gilbert equation which describes the dynamics of magnetization, is calculated for Fe, Co and Ni bulk ferromagnets, Co films and Co/Pd bilayers within a nine-band tight-binding model with spin-orbit coupling included. The calculational effciency is remarkably improved by introducing finite temperature into the electronic occupation factors and subsequent summation over the Matsubara frequencies. The calculated dependence of Gilbert damping constant on scattering rate for bulk Fe, Co and Ni is in good agreement with the results of previous ab initio calculations. Calculations are reported for ferromagnetic Co metallic films and Co/Pd bilayers. The dependence of the Gilbert damping constant on Co film thickness, for various scattering rates, is studied and compared with recent experiments.

  2. Constitutional hepatic dysfunction (Gilbert's disease), about eleven cases studied in the Hospital Obrero de Lima

    OpenAIRE

    León Navarro, Oswaldo

    2014-01-01

    We report eleven cases of Constitutional Hepatic dysfunction (Gilbert's disease), studied at the Department of Gastroenterology of the Hospital Obrero de Lima. We place this disease in the group of non Chronicles Hemolytic jaundice due to congenital defects in bilirubin metabolism. It is noted, according to the new concepts of bilirubin metabolism, the pathogenic mechanism of this disease is related to deficient activity of glucuronyltransferase, the enzyme responsible for bilirubin conjugati...

  3. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    Energy Technology Data Exchange (ETDEWEB)

    Gurpinar, Emre [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Power Electronics and Electric Machinery Research Group; Iannuzzo, Francesco [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology; Yang, Yongheng [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology; Castellazzi, Alberto [Univ. of Nottingham (United Kingdom). Power Electronics, Machines and Control (PEMC); Blaabjerg, Frede [Aalborg Univ., Aalborg (Denmark). Dept. of Energy Technology

    2017-11-23

    Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

  4. Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter

    International Nuclear Information System (INIS)

    Gurpinar, Emre; Iannuzzo, Francesco; Yang, Yongheng; Castellazzi, Alberto; Blaabjerg, Frede

    2017-01-01

    Here in this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which mainly contribute to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a fourlayer Printed Circuit Board (PCB) with the aim to maximize the switching performance of GaN HEMTs is explained. The design of gate drivers for the GaN HEMT devices is presented. Parasitic inductance and resistance of the proposed design are extracted with finite element analysis and discussed. Common mode behaviours based on the SPICE model of the converter are analyzed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

  5. GILBERT'S SYNDROME - A CONCEALED ADVERSITY FOR PHYSICIANS AND SURGEONS.

    Science.gov (United States)

    Rasool, Ahsan; Sabir, Sabir; Ashlaq, Muhammad; Farooq, Umer; Khan, Muhammad Zatmar; Khan, Faisal Yousaf

    2015-01-01

    Gilbert's syndrome (often abbreviated as GS) is most common hereditary cause of mild unconjugated (indirect) hyperbilirubinemia. Various studies have been published depicting clinical and pharmacological effects of Gilbert's syndrome (GS). However GS as a sign of precaution for physician and surgeons has not been clearly established. A systematic study of the available literature was done. Key words of Gilbert's syndrome, hyperbilirubinemia and clinical and pharmacological aspects of GS were searched using PubMed as search engine. Considering the study done in last 40 years, 375 articles were obtained and their abstracts were studied. The criterion for selecting the articles for through study was based on their close relevance with the topic. Thus 40 articles and 2 case reports were thoroughly studied. It was concluded that Gilbert's syndrome has immense clinical importance because the mild hyperbilirubinemia can be mistaken for a sign of occult, chronic, or progressive liver disease. GS is associated with lack of detoxification of few drugs. It is related with spherocytosis, cholithiasis, haemolytic anaemia, intra-operative toxicity, irinotecan toxicity, schizophrenia and problems in morphine metabolism. It also has profound phenotypic effect as well. The bilirubin level of a GS individual can rise abnormally high in various conditions in a person having Gilbert's syndrome. This can mislead the physicians and surgeons towards false diagnosis. Therefore proper diagnosis of GS should be ascertained in order to avoid the concealed adversities of this syndrome.

  6. Illocutionary Acts on Liz Gilbert's Dialogue in Eat Pray Love Movie

    OpenAIRE

    Sri Juriati Ownie, Riandi and

    2015-01-01

    This thesis deals with the type of illocutionary acts on Liz Gilbert's dialogue inEat Pray Love movie. The objectives of the study were to describe the types ofillocutionary acts used by Liz Gilbert in Eat Pray Love movie, the dominant typeof illocutionary acts used by Liz Gilbert in Eat Pray Love movie and the reasonwhy the dominant type of illocutionary acts occur on Liz Gilbert's dialogue in EatPray Love movie. This research was conducted by using descriptive qualitativedesign. Descriptive...

  7. Portrait Face-Off: Gilbert Stuart vs. Peter Max

    Science.gov (United States)

    Crumpecker, Cheryl

    2012-01-01

    When art classes are short and infrequent, it is always a challenge to meet required state and national standards. A unit comparing and contrasting Peter Max's Pop art portraits with the realistic style of Gilbert Stuart's presidential portraits provides an opportunity to address a huge number of these requirements. Focus can change with the age…

  8. Backus-Gilbert inversion of travel time data

    Science.gov (United States)

    Johnson, L. E.

    1972-01-01

    Application of the Backus-Gilbert theory for geophysical inverse problems to the seismic body wave travel-time problem is described. In particular, it is shown how to generate earth models that fit travel-time data to within one standard error and having generated such models how to describe their degree of uniqueness. An example is given to illustrate the process.

  9. Nonlinear characterization of GaN HEMT

    International Nuclear Information System (INIS)

    Chen Chi; Hao Yue; Yang Ling; Quan Si; Ma Xiaohua; Zhang Jincheng

    2010-01-01

    DC I-V output, small signal and an extensive large signal characterization (load-pull measurements) of a GaN HEMT on a SiC substrate with different gate widths of 100 μm and 1 mm have been carried out. From the small signal data, it has been found that the cutoff frequencies increase with gate width varying from 100 μm to 1mm, owing to the reduced contribution of the parasitic effect. The devices investigated with different gate widths are enough to work in the C band and X band. The large signal measurements include the load-pull measurements and power sweep measurements at the C band (5.5 GHz) and X band (8 GHz). When biasing the gate voltage in class AB and selecting the source impedance, the optimum load impedances seen from the device for output power and PAE were localized in the load-pull map. The results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage, and the CW power density of 10.16 W/mm was obtained. From the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed, although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

  10. Obituary: James Gilbert Baker, 1914-2005

    Science.gov (United States)

    Baker, Neal Kenton

    2005-12-01

    Dr. James Gilbert Baker, renowned astronomer and optical physicist, died 29 June 2005 at his home in Bedford, New Hampshire at the age of 90. Although his scientific interest was astronomy, his extraordinary ability in optical design led to the creation of hundreds of optical systems that supported astronomy, aerial reconnaissance, instant photography (Polaroid SX70 camera), and the US space programs. He was the recipient of numerous awards for his creative work. He was born in Louisville, Kentucky, on 11 November 1914, the fourth child of Jesse B. Baker and Hattie M. Stallard. After graduating from Louisville DuPont Manual High, he went on to attend the University of Louisville majoring in Mathematics. He became very close to an Astronomy Professor, Dr. Moore, and many times used his telescopes to do nightly observations. While at the university, he built mirrors for his own telescopes and helped form the Louisville Astronomical Society in 1933. At the University of Louisville, he also met his future wife, Elizabeth Katherine Breitenstein of Jefferson County, Kentucky. He received his BA in 1935 at the height of the Depression. He began his graduate work in astronomy at the Harvard College Observatory. After his MA (1936), he was appointed a Junior Fellow (1937-1943) in the Prestigious Harvard Society of Fellows. He received his PhD in 1942 from Harvard in rather an unusual fashion, which is worth retelling. During an Astronomy Department dinner, Dr. Harlow Shapley (the director) asked him to give a talk. According to the "Courier-Journal Magazine", "Dr. Shapley stood up and proclaimed an on-the-spot departmental meeting and asked for a vote on recommending Baker for a Ph.D. on the basis of the 'oral exam' he had just finished. The vote was unanimous." It was at Harvard College Observatory during this first stage of his career that he collaborated with Donald H. Menzel, Lawrence H. Aller, and George H. Shortley on a landmark set of papers on the physical processes

  11. The Partition of the Gilbert and Ellice Islands

    Directory of Open Access Journals (Sweden)

    W. David McIntyre

    2012-05-01

    Full Text Available This paper reviews the separation of the Ellice Islands from the Gilbert and Ellice Islands Colony, in the central Pacific, in 1975: one of the few agreed boundary changes that were made during decolonization. Under the name Tuvalu, the Ellice Group became the world’s fourth smallest state and gained independence in 1978. The Gilbert Islands, (including the Phoenix and Line Islands, became the Republic of Kiribati in 1979. A survey of the tortuous creation of the colony is followed by an analysis of the geographic, ethnic, language, religious, economic, and administrative differences between the groups. When, belatedly, the British began creating representative institutions, the largely Polynesian, Protestant, Ellice people realized they were doomed to permanent minority status while combined with the Micronesian, half-Catholic, Gilbertese. To protect their identity they demanded separation, and the British accepted this after a UN-observed referendum.

  12. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

    Energy Technology Data Exchange (ETDEWEB)

    Du Rui; Dai Yang; Chen Yanling; Yang Fuhua, E-mail: ddrr@semi.ac.c [Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2009-03-15

    A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

  13. Indium antimonide based HEMT for RF applications

    International Nuclear Information System (INIS)

    Subash, T. D.; Gnanasekaran, T.

    2014-01-01

    We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system. (semiconductor materials)

  14. Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications

    International Nuclear Information System (INIS)

    Ahmed, S; Bokhari, S H; Amin, F; Khan, L A; Hussain, Z

    2013-01-01

    Ion-implanted AlGaN/GaN High Electron Mobility Transistors (HEMT) devices were studied thoroughly to look into the possibilities of enhancing efficiency for high-power and high-frequency electronic and gas sensing applications. A dedicated experimental design was created in order to study the influence of the physical parameters in response to high energy (by virtue of in-situ beam heating due to highly energetic implantation) ion implantation to the active device regions in nitride HEMT structures. Disorder or damage created in the HEMT structure was then studied carefully with electrical characterization techniques such as Hall, I-V and G-V measurements. The evolution of the electrical characteristics affecting the high-power, high-frequency and ultra-high efficiency gas sensing operations were also analyzed by subjecting the HEMT active device regions to progressive time-temperature annealing cycles. Our suggested model can also provide a functional process engineering window to control the extent of 2D Electron mobility in AlGaN/GaN HEMT devices undergoing a full cycle of thermal impact (i.e. from a desirable conductive region to a highly compensated one)

  15. An improved large signal model of InP HEMTs

    Science.gov (United States)

    Li, Tianhao; Li, Wenjun; Liu, Jun

    2018-05-01

    An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

  16. Replication and Pedagogy in the History of Psychology IV: Patrick and Gilbert (1896) on Sleep Deprivation

    Science.gov (United States)

    Fuchs, Thomas; Burgdorf, Jeffrey

    2008-01-01

    We report an attempted replication of G. T. W. Patrick and J. A. Gilbert's pioneering sleep deprivation experiment "Studies from the psychological laboratory of the University of Iowa. On the effects of loss of sleep", conducted in 1895/96. Patrick and Gilbert's study was the first sleep deprivation experiment of its kind, performed by some of the…

  17. AlGaN/GaN double-channel HEMT

    International Nuclear Information System (INIS)

    Quan Si; Hao Yue; Ma Xiaohua; Zheng Pengtian; Xie Yuanbin

    2010-01-01

    The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied. (semiconductor devices)

  18. 77 FR 37031 - Don W. Gilbert Hydro Power, LLC; Notice of Application Tendered for Filing With the Commission...

    Science.gov (United States)

    2012-06-20

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 14367-001] Don W. Gilbert... No.: 14367-001. c. Date filed: May 30, 2012. d. Applicant: Don W. Gilbert Hydro Power, LLC. e. Name... Utility Regulatory Policies Act of 1978, 16 U.S.C. 2705, 2708.] h. Applicant Contact: Don W. Gilbert and...

  19. 77 FR 64973 - Don W. Gilbert Hydro Power, LLC; Notice of Application Accepted for Filing With the Commission...

    Science.gov (United States)

    2012-10-24

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 14367-001] Don W. Gilbert...: Original Minor License. b. Project No.: 14367-001. c. Date filed: May 30, 2012. d. Applicant: Don W...(a)-825(r). (2006). h. Applicant Contact: Don W. Gilbert and DeAnn G. Somonich, Don W. Gilbert Hydro...

  20. Generalized Landau-Lifshitz-Gilbert equation for uniformly magnetized bodies

    Energy Technology Data Exchange (ETDEWEB)

    Serpico, C. [Dipartimento di Ingegneria Elettrica, Universita di Napoli ' FedericoII' , Via Claudio 21, I-80125 Naples (Italy)], E-mail: serpico@unina.it; Mayergoyz, I.D. [ECE Department and UMIACS, University of Maryland, College Park, MD 20742 (United States); Bertotti, G. [Istituto Nazionale di Ricerca Metrologica (INRiM), I-10135 Turin (Italy); D' Aquino, M. [Dipartimento per le Tecnologie, University of Napoli ' Parthenope' , I-80133 Naples (Italy); Bonin, R. [Istituto Nazionale di Ricerca Metrologica (INRiM), I-10135 Turin (Italy)

    2008-02-01

    We consider generalized Landau-Lifshitz-Gilbert (LLG) deterministic dynamics in uniformly magnetized bodies. The dynamics take place on the unit sphere {sigma}, and are characterized by a vector field v tangential to {sigma}. By using Helmholtz decomposition on {sigma}, it is proven that v is uniquely defined by two potentials {chi} and {psi}. Potential {chi} can be identified with the free energy of the system, while {psi} describes non-conservative interactions of the system with the environment. The presence of {psi} modifies the usual energy balance of LLG dynamics. Instead of purely relaxation dynamics we may have steady injection of energy through non-conservative interactions. The implications of the new form of the energy balance are discussed in detail.

  1. An accurate and simple large signal model of HEMT

    DEFF Research Database (Denmark)

    Liu, Qing

    1989-01-01

    A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid...

  2. Ultrastructural morphology and phylogeny of Henneguya gilbert n. sp. (Myxozoa) infecting the teleostean Cyphocharax gilbert (Characiformes: Curimatidae) from Brazil.

    Science.gov (United States)

    Casal, Graça; São Clemente, Sérgio C; Lopes, Leila; Rocha, Sónia; Felizardo, Nilza; Oliveira, Elsa; Al-Quraishy, Saleh; Azevedo, Carlos

    2017-10-01

    This paper describes light and ultrastructural observations and molecular analysis of a fish-infecting myxosporean, Henneguya gilbert n. sp., which was found infecting the gill epithelium of the commercially important freshwater teleost fish Cyphocharax gilbert (Curimatidae) collected in the estuarine region of Guandu River, Rio de Janeiro State, Brazil. The parasite occurs in the gills, forming whitish spherical to ellipsoidal polysporic cysts measuring up to ~ 750 μm, and displaying asynchronous development. Mature myxospores are ellipsoidal with a bifurcated caudal process. The length, width and thickness of the body of the myxospore are 12.0 × 5.3 × 3.6 μm, respectively; two equal caudal processes are 16.8 μm long, and the total length of the myxospore is 27.2 μm. There are two unequal polar capsules: the larger measures 5.5 μm length × 1.3 μm width and has a polar filament with 9-10 coils; the smaller is 4.0 μm long × 1.3 μm wide and has a polar filament with 7-8 coils. The sporoplasm is binucleated and presents a spherical vacuole surrounded by numerous globular sporoplasmosomes. Phylogenetic analysis, based on the small subunit rRNA sequencing, using maximum likelihood method reveals the parasite clustering together with other myxobolids that are histozoic and parasitize freshwater fish of the order Characiformes, thereby strengthening the contention that the host phylogenetic relationships and aquatic environment are the strongest evolutionary signals for myxosporeans of the family Myxobolidae.

  3. Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module

    International Nuclear Information System (INIS)

    Chou, Po-Chien; Cheng, Stone

    2013-01-01

    Emerging gallium nitride (GaN)-based high electron mobility transistor (HEMT) technology has the potential to make lower loss and higher power switching characteristics than those made using traditional silicon (Si) components. This work designed, developed, and tested an all-GaN-based power module. In a 200 V, 45 A module, each switching element comprises three GaN chips in parallel, each of which includes six 2.1 A AlGaN/GaN-on-Si HEMT cells. The cells are wire-bonded in parallel to scale up the power rating. Static I D -V DS characteristics of the module are experimentally obtained over widely varying base plate temperatures, and a low on-state resistance is obtained at an elevated temperature of 125 °C. The fabricated module has a blocking voltage exceeding 200 V at a reverse-leakage current density below 1 mA/mm. Two standard temperature measurements are made to provide a simple means of determining mean cell temperature in the module. Self-heating in AlGaN/GaN HEMTs is studied by electrical analysis and infrared thermography. Electrical analysis provides fast temperature overviews while infrared thermography reveals temperature behavior in selected active regions. The current distribution among cells was acceptable over the measured operating temperature range. The characterization of electrical performance and mechanical performance confirm the potential use of the packaged module for high-power applications. -- Highlights: • This work proposes the design, development, and testing of all-GaN power module. • We develop module package and determine their thermal and electrical properties. • ID-VDS characteristics are obtained over a wide range of base plate temperatures. • Self-heating in GaN HEMTs is studied by electrical analysis and IR thermography

  4. Individuation, Cosmogenesis and Technology: Sri Aurobindo and Gilbert Simondon

    Directory of Open Access Journals (Sweden)

    Debashish Banerji

    2015-02-01

    Full Text Available The turn of the 19th/20th centuries saw a number of philosophers of conscious evolution emerging from different cultural backgrounds. This paper argues that this phenomenon, which has sometimes been seen as a philosophical consequence of Darwin’s evolutionary theory in the life sciences, is more importantly related to the enhanced scope of human subjectivity made possible by technology at this time. Yet technology remains the “unthought within the thought” of its times, an ambiguous presence, derided for its alienating effects and praised for its enhancement of human capacities and comforts. A later generation of thinkers, belonging to the post World War II era renews the thought of conscious evolution, now in engagement with new technologies of a planet spanning scope. This essay considers the ideas of these two generations of thinkers, focusing on Sri Aurobindo (1872-1950 from the earlier generation and Gilbert Simondon (1924-1989 from the more recent era, questioning the consequences of contemporary technology in their thoughts, goals and practices. In developing the historical continuity of ideas, it tracks the question of technology from the earlier to the later generation, highlighting the understanding of both its promise and its ills and engaging with it the possibilities of conscious evolution.

  5. LA ESPIRITUALIDAD EN LA OBRA DE GILBERT SIMONDON

    Directory of Open Access Journals (Sweden)

    María de Lourdes Solís Plancarte

    2013-06-01

    Full Text Available El objetivo de este artículo es presentar el tema de la espiritualidad, una de las tesis más polémicas dentro del pensamiento de Gilbert Simondon. Planteamos la espiritualidad a partir de  la obra más conocida de Simondon, El modo de existencia de los objetos técnicos (MEOT, así como de la última parte de su obra capital La individuación a la luz de las nociones de forma e información (ILFI, junto con el curso Imagination et invention. Se argumenta que la espiritualidad emerge de la relación del individuo con otros individuos y con el mundo, es decir, la transindividualidad, fase que atraviesa la composición de un sistema de relaciones que se extiende más allá de la percepción humana, bajo la forma de puntos claves. En otras palabras, intentamos mostrar cierto vínculo entre lo transindividual en ILFI y los puntos-clave en MEOT. El artículo ofrece una breve introducción al autor y su obra,  describe el sistema afectivo-emotivo que Jung descubrió en su análisis del subconsciente, para abordar el tema de la espiritualidad bajo la égida del mundo mágico primitivo, realizado a través de ciertos enfoques Mircea Eliade. El plano de la cultura es discutido desde la individuación psíquica colectiva.

  6. Unstable behaviour of normally-off GaN E-HEMT under short-circuit

    Science.gov (United States)

    Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

    2018-04-01

    The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

  7. Analytical high frequency GaN HEMT model for noise simulations

    Science.gov (United States)

    Eshetu Muhea, Wondwosen; Mulugeta Yigletu, Fetene; Lazaro, Antonio; Iñiguez, Benjamin

    2017-12-01

    A compact high frequency model for AlGaN/GaN HEMT device valid for noise simulations is presented in this paper. The model is developed based on active transmission line approach and linear two port noise theory that makes it applicable for quasi static as well as non-quasi static device operation. The effects of channel length modulation and velocity saturation are discussed. Moreover, the effect of the gate leakage current on the noise performance of the device is investigated. It is shown that there is an apparent increase in noise generated in the device due to the gate current related shot noise. The common noise figures of merit for HFET are calculated and verified with experimental data.

  8. Effects of structural modification on reliability of nanoscale nitride HEMTs

    Science.gov (United States)

    Gaddipati, Vamsi Mohan

    AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect

  9. Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

    Science.gov (United States)

    Suria, Ateeq J.; Yalamarthy, Ananth Saran; Heuser, Thomas A.; Bruefach, Alexandra; Chapin, Caitlin A.; So, Hongyun; Senesky, Debbie G.

    2017-06-01

    In this paper, we describe the use of 50 nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 °C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10 nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50 nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (Ids-Vds) and gate leakage (Ig,leakage) characteristics up to 600 °C. Both, the 10 nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 °C, as evidenced by a sudden increase of approximately 50 times and 5.3 × 106 times in Ig,leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor.

  10. Statutory Instrument No. 125, The Nuclear Installations (Gilbert and Ellice Islands) Order 1972

    International Nuclear Information System (INIS)

    1972-01-01

    This Order extends to the Gilbert and Ellice Islands, with the exceptions, adaptations and modifications specified in the Schedule to the Order, certain provisions of the Nuclear Installations Act 1965, as amended. It is the 1965 Act which implements the provisions of the Paris Convention and the Brussels Supplementary Convention in the United Kingdom. The provisions so extended impose a duty on the nuclear operator to secure that no nuclear occurrence taking place within the territorial limits of the Gilbert and Ellice Islands causes nuclear injury or damage, and relate to the right to compensation for breach of that duty, the bringing and satisfaction of claims and other matters. (NEA) [fr

  11. A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT

    NARCIS (Netherlands)

    Maas, A.M.P.; Vliet, F.E. van

    2005-01-01

    A low-noise X-band microstrip hybrid VCO has been designed and realised using a 2 × 50 μm GaN-on-SiC pseudo-morphic HEMT as the active device. The transistor has been manufactured by TIGER and features a gate-length of 0.15 μm, an fT of 22 GHz, a break-down voltage of 42 Volts and an Idss, close to

  12. ECV profiling of GaAs and GaN HEMT heterostructures

    Science.gov (United States)

    Yakovlev, G.; Zubkov, V.

    2018-03-01

    AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set of test structures were fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT and nondoping GaN HEMT. The concentration profiles of free charge carriers across the samples were experimentally obtained. The QW filling was analyzed and compared for different mechanisms of emitter doping and 2DEG origins.

  13. Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin Films

    NARCIS (Netherlands)

    Zhang, W.; Jiang, S.; Wong, P.K.J.; Sun, Li; Wang, Y.K.; Wang, Kai; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard; van der Laan, G.; Zhai, Y.

    2014-01-01

    By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd

  14. An Interpretation of Part of Gilbert Gottlieb's Legacy: Developmental Systems Theory Contra Developmental Behavior Genetics

    Science.gov (United States)

    Molenaar, Peter C. M.

    2015-01-01

    The main theme of this paper concerns the persistent critique of Gilbert Gottlieb on developmental behavior genetics and my reactions to this critique, the latter changing from rejection to complete acceptation. Concise characterizations of developmental behavior genetics, developmental systems theory (to which Gottlieb made essential…

  15. A Response to Shelby Gilbert's "A Study of Ogbu and Simons' Thesis"

    Science.gov (United States)

    Hawkins, C. Matthew

    2009-01-01

    This article responds to Shelby Gilbert's "A Study of Ogbu and Simon's Thesis." The author begins by saying that he thinks that this study of examining Ogbu and Simons' thesis (to investigate school performance of Black immigrant and non-immigrant students in the United States) makes a thought-provoking contribution to overall discussions…

  16. Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

    Directory of Open Access Journals (Sweden)

    H. MOSBAHI

    2014-05-01

    Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

  17. Depletion-Mode GaN HEMT Q-Spoil Switches for MRI Coils.

    Science.gov (United States)

    Lu, Jonathan Y; Grafendorfer, Thomas; Zhang, Tao; Vasanawala, Shreyas; Robb, Fraser; Pauly, John M; Scott, Greig C

    2016-12-01

    Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws significant current. In this work, a Q-spoiling technique using a depletion-mode Gallium Nitride HEMT device was developed for coil detuning at both 1.5 T and 3 T MRI. The circuits with conventional PIN diode Q-spoiling and the GaN HEMT device were implemented on surface coils. SNR was measured and compared for all surfaces coils. At both 1.5 T and 3 T, comparable SNR was achieved for all coils with the proposed technique and conventional Q-spoiling. The GaN HEMT device has significantly reduced the required power for Q-spoiling. The GaN HEMT device also provides useful safety features by detuning the coil when unpowered.

  18. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Das, Palash; Biswas, Dhrubes

    2014-01-01

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT

  19. 5 Watt GaN HEMT Power Amplifier for LTE

    Directory of Open Access Journals (Sweden)

    K. Niotaki

    2014-04-01

    Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

  20. Electron beam irradiation effect on GaN HEMT

    International Nuclear Information System (INIS)

    Lou Yinhong; Guo Hongxia; Zhang Keying; Wang Yuanming; Zhang Fengqi

    2011-01-01

    In this work, GaN HEMTs (High Electron Mobility Transistor) were irradiated by 0.8 and 1.2 MeV electron beams, and the irradiation effects were investigated. The results show that the device damage caused by 0.8 MeV electrons is more serious than that by 1.2 MeV electrons. Saturation drain current increase and threshold voltage negative shift are due to trapped positive charge from ionization in the AlGaN layer and N, Ga vacancy from non-ionizing energy loss in the GaN layer. Electron traps and trapped positive charges from non-ionizing in the AlGaN layer act as trap-assisted-tunneling centers that increase the gate leakage current.(authors)

  1. Satire politique et sociale dans les opérettes de Gilbert et Sullivan Political and Social Satire in Gilbert and Sullivan’s Operettas

    Directory of Open Access Journals (Sweden)

    Anita Cornic

    2009-11-01

    Full Text Available Although Gilbert and Sullivan’s Operas were first and foremost light, humorous works devised to entertain their mostly middle-class audience, they are characterised by a certain amount of political and social satire, as this paper aims to show through telling examples. Beyond the merry and pleasant songs which remain part and parcel of the English cultural heritage, the shafts directed against the social and political institutions (especially the House of Lords and the class system have lost none of their piquancy and even relevance for today’s audience.

  2. Geometric size effect on the extrinsic Gilbert damping in laterally confined magnetic structures

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hyon-Seok [Department of Emerging Materials Science, DGIST, Daegu 42988 (Korea, Republic of); Lee, Kyeong-Dong [Department of Materials Science and Engineering, KAIST, Daejeon 34141 (Korea, Republic of); You, Chun-Yeol [Department of Physics, Inha University, Incheon 22212 (Korea, Republic of); Park, Byong-Guk [Department of Materials Science and Engineering, KAIST, Daejeon 34141 (Korea, Republic of); Hong, Jung-Il, E-mail: jihong@dgist.ac.kr [Department of Emerging Materials Science, DGIST, Daegu 42988 (Korea, Republic of); Research Centre for Emerging Materials, DGIST, Daegu 42988 (Korea, Republic of)

    2016-05-15

    We investigated spin dynamics in micron-length scale patterned thin films using the GPU-based micromagnetic simulation program. Spin precessional motion was induced by a Gaussian-pulse magnetic field. The effective Gilbert damping was examined by tracking the precessional motion of the spins, and we found that the damping constant depends on the size and shape of the pattern as well as the externally applied magnetic field. Additional extrinsic damping generated around the edge region was attributed to the dephasing effect between the fundamental spin wave and other spin wave modes. We find that the effect of extrinsic damping could be eliminated by proper adjustments of sample size, external bias field, position, and area of observation. - Highlights: • GPU based micromagnetic simulation of spin dynamics in the micropatterned ferromagnetic films. • Effect of edge regions of the pattern on the Gilbert damping behaviors. • Guide for the analyses of intrinsic magnetic damping in the micron scale patterned films.

  3. On computation of relaxation constant α in Landau–Lifshitz–Gilbert equation

    Energy Technology Data Exchange (ETDEWEB)

    Gladkov, Serguey, E-mail: sglad@newmail.ru; Bogdanova, Sofiya, E-mail: sonjaf@list.ru

    2014-11-15

    Due to the quasi-classical kinetic equation (QKE) for the magnon distribution function to calculate the velocity of the domain wall motion V in magnetic fields H>H{sub a}, where H{sub a}− magnetic anisotropy field. Based on the comparison of this formula for Vthe analytic expression of relaxation constant α in Landau–Lifshitz–Gilbert equation was found. We used the detected correlation between the system's entropy and the environment's resistance force, and obtained an expression for the spin-lattice braking force that is applied to the moving domain wall. We calculated the mobility ratio of the domain wall. - Highlights: • The resistance force acting on the domain wall was calculated. • Mobility coefficient of domain wall was calculated. • The strict calculation of relaxation constant in equation Landau-Lifshitz- Gilbert.

  4. Bilirubin and beyond : A review of lipid status in Gilbert's syndrome and its relevance to cardiovascular disease protection

    NARCIS (Netherlands)

    Bulmer, A. C.; Verkade, H. J.; Wagner, K. -H.

    Gilbert's syndrome (GS) is characterized by a benign, mildly elevated bilirubin concentration in the blood. Recent reports show clear protection from cardiovascular disease in this population. Protection of lipids, proteins and other macromolecules from oxidation by bilirubin represents the most

  5. Emerging GaN-based HEMTs for mechanical sensing within harsh environments

    Science.gov (United States)

    Köck, Helmut; Chapin, Caitlin A.; Ostermaier, Clemens; Häberlen, Oliver; Senesky, Debbie G.

    2014-06-01

    Gallium nitride based high-electron-mobility transistors (HEMTs) have been investigated extensively as an alternative to Si-based power transistors by academia and industry over the last decade. It is well known that GaN-based HEMTs outperform Si-based technologies in terms of power density, area specific on-state resistance and switching speed. Recently, wide band-gap material systems have stirred interest regarding their use in various sensing fields ranging from chemical, mechanical, biological to optical applications due to their superior material properties. For harsh environments, wide bandgap sensor systems are deemed to be superior when compared to conventional Si-based systems. A new monolithic sensor platform based on the GaN HEMT electronic structure will enable engineers to design highly efficient propulsion systems widely applicable to the automotive, aeronautics and astronautics industrial sectors. In this paper, the advancements of GaN-based HEMTs for mechanical sensing applications are discussed. Of particular interest are multilayered heterogeneous structures where spontaneous and piezoelectric polarization between the interface results in the formation of a 2-dimensional electron gas (2DEG). Experimental results presented focus on the signal transduction under strained operating conditions in harsh environments. It is shown that a conventional AlGaN/GaN HEMT has a strong dependence of drain current under strained conditions, thus representing a promising future sensor platform. Ultimately, this work explores the sensor performance of conventional GaN HEMTs and leverages existing technological advances available in power electronics device research. The results presented have the potential to boost GaN-based sensor development through the integration of HEMT device and sensor design research.

  6. Gilbert Newton Lewis: his influence on physical-organic chemists at Berkeley

    International Nuclear Information System (INIS)

    Calvin, M.

    1982-03-01

    A review is presented of the historical contributions of Gilbert N. Lewis to science and a discussion of the influence of Lewis on the research of the members of the physical-organic staff at Berkeley, including Melvin Calvin, during the twenties, thirties and forties. Some specific examples are discussed. Also, the effect of Lewis, his science and administrative concepts in the creation of excellence in a department of chemistry are reviewed

  7. Ab Initio theory of the Gilbert damping in random ferromagnetic alloys

    Czech Academy of Sciences Publication Activity Database

    Drchal, Václav; Turek, I.; Kudrnovský, Josef

    2017-01-01

    Roč. 30, č. 6 (2017), s. 1669-1672 ISSN 1557-1939 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68378271 Keywords : Gilbert damping * ferromagnetic alloys * ab initio * nonlocal torques Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.180, year: 2016

  8. Gilbert Newton Lewis: his influence on physical-organic chemists at Berkeley

    Energy Technology Data Exchange (ETDEWEB)

    Calvin, M.

    1982-03-01

    A review is presented of the historical contributions of Gilbert N. Lewis to science and a discussion of the influence of Lewis on the research of the members of the physical-organic staff at Berkeley, including Melvin Calvin, during the twenties, thirties and forties. Some specific examples are discussed. Also, the effect of Lewis, his science and administrative concepts in the creation of excellence in a department of chemistry are reviewed.

  9. Spin dynamics in ferromagnets: Gilbert dymping and two-magnon scattering

    Czech Academy of Sciences Publication Activity Database

    Zakeri, Kh.; Lindner, J.; Barsukov, I.; Meckenstock, R.; Farle, M.; von Horsten, U.; Wende, H.; Keune, W.; Rocker, J.; Kalarickal, S.S.; Lenz, K.; Kuch, W.; Baberschke, K.; Frait, Zdeněk

    2007-01-01

    Roč. 76, č. 10 (2007), 104416/1-104416/8 ISSN 1098-0121 Grant - others:Deutsche Forschunggemeinschaft(DE) Sfb 491; EC Marie Curie Research Training Network(XE) MRTN-CT-2004-005567, 2004-2008 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferromagnetic resonance * Gilbert damping * two-magnon scattering * Fe 3 Si films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

  10. Galvanomagnetic transport properties and Gilbert damping in ferromagnetic PdCo alloy

    Czech Academy of Sciences Publication Activity Database

    Kudrnovský, Josef; Drchal, Václav; Turek, I.

    2017-01-01

    Roč. 30, č. 5 (2017), s. 1367-1370 ISSN 1557-1939 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68378271 Keywords : anomalous Hall effect * Gilbert damping * partial order * first-principles Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.180, year: 2016

  11. Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

    Science.gov (United States)

    Wei, Mao; Wei-Bo, She; Cui, Yang; Jin-Feng, Zhang; Xue-Feng, Zheng; Chong, Wang; Yue, Hao

    2016-01-01

    In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204085, 61334002, 61306017, 61474091, 61574112, and 61574110).

  12. Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

    International Nuclear Information System (INIS)

    Mao Wei; She Wei-Bo; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Hao Yue; Yang Cui

    2016-01-01

    In this paper, a novel AlGaN/GaN HEMT with a Schottky drain and a compound field plate (SD-CFP HEMT) is presented for the purpose of better reverse blocking capability. The compound field plate (CFP) consists of a drain field plate (DFP) and several floating field plates (FFPs). The physical mechanisms of the CFP to improve the reverse breakdown voltage and to modulate the distributions of channel electric field and potential are investigated by two-dimensional numerical simulations with Silvaco-ATLAS. Compared with the HEMT with a Schottky drain (SD HEMT) and the HEMT with a Schottky drain and a DFP (SD-FP HEMT), the superiorities of SD-CFP HEMT lie in the continuous improvement of the reverse breakdown voltage by increasing the number of FFPs and in the same fabrication procedure as the SD-FP HEMT. Two useful optimization laws for the SD-CFP HEMTs are found and extracted from simulation results. The relationship between the number of the FFPs and the reverse breakdown voltage as well as the FP efficiency in SD-CFP HEMTs are discussed. The results in this paper demonstrate a great potential of CFP for enhancing the reverse blocking ability in AlGaN/GaN HEMT and may be of great value and significance in the design and actual manufacture of SD-CFP HEMTs. (paper)

  13. On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

    Science.gov (United States)

    Acurio, E.; Crupi, F.; Magnone, P.; Trojman, L.; Meneghesso, G.; Iucolano, F.

    2017-06-01

    This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps. The trapping rate exhibits a universal decreasing behavior as a function of the number of filled traps, independently of stress time, stress voltage, stress temperature, and device-to-device variability. The stress-induced ΔVth can be fully recovered by applying a small negative voltage, which causes the electron de-trapping. In the explored time window (between 1 s and thousands of s), the recovery dynamics is well described by the superimposition of two exponential functions associated with two different traps. Both trap time constants are independent of the stress voltage, decrease with temperature and increase with the recovery voltage. The activation energy of the slower trap is 0.93 eV, while the faster trap exhibits an activation energy with a large spread in the range between 0.45 eV and 0.82 eV.

  14. 11.9 W Output Power at S-band from 1 mm AlGaN/GaN HEMTs

    NARCIS (Netherlands)

    Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

    2008-01-01

    We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (Wg) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an

  15. Novel attributes of AlGaN/AlN/GaN/SiC HEMTs with the multiple indented channel

    Science.gov (United States)

    Orouji, Ali A.; Ghaffari, Majid

    2015-11-01

    In this paper, a high performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with the multiple indented channel (MIC-HEMT) is proposed. The main focus of the proposed structure is based on reduction of the space around the gate, stop of the spread of the depletion region around the source-drain, and decrement of the thickness of the channel between the gate and drain. Therefore, the breakdown voltage increases, meanwhile the elimination of the gate depletion layer extension to source/drain decreases the gate-source and gate-drain capacitances. The optimized results reveal that the breakdown voltage and the drain saturation current increase about 178% and 46% compared with a conventional HEMT (C-HEMT), respectively. Therefore, the maximum output power density is improved by factor 4.1 in comparison with conventional one. Also, the cut-off frequency of 25.2 GHz and the maximum oscillation frequency of 92.1 GHz for the MIC-HEMT are obtained compared to 13 GHz and 43 GHz for that of the C-HEMT and the minimum figure noise decreased consequently of reducing the gate-drain and gate-source capacitances by about 42% and 40%, respectively. The proposed MIC-HEMT shows a maximum stable gain (MSG) exceeding 24.1 dB at 3.1 GHz which the greatest gain is yet reported for HEMTs, showing the potential of this device for high power RF applications.

  16. Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence

    Science.gov (United States)

    Isobe, Yasuhiro; Hung, Hung; Oasa, Kohei; Ono, Tasuku; Onizawa, Takashi; Yoshioka, Akira; Takada, Yoshiharu; Saito, Yasunobu; Sugiyama, Naoharu; Tsuda, Kunio; Sugiyama, Toru; Mizushima, Ichiro

    2017-06-01

    Defect analysis of GaN films in high electron mobility transistor (HEMT) structures by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful technique for improving the current collapse of GaN-HEMT devices, and the relationship between crystal quality and device characteristics is also investigated. The crystal quality of intrinsic-GaN (i-GaN) and carbon-doped GaN produced clearly different peak intensities of blue luminescence (BL), yellow luminescence (YL), and band-edge emission (BE), which is independently detected by X-CL. Current collapse in GaN-HEMT devices is found to be determined by the BL/BE and YL/BE ratios at the top of the i-GaN layer, which is close to the channel. Moreover, the i-GaN thickness required in order to minimize the BL/BE and YL/BE ratios and the thickness dependency of GaN for minimizing the BL/BE and YL/BE ratios depending on the growth conditions can be evaluated by X-CL. However, there is no correlation between current collapse in GaN-HEMT devices and the YL/BE ratio by conventional photoluminescence because HEMT devices consist of multiple GaN layers and the YL signal is detected from the carbon-doped GaN layer. Thus, the X-CL analysis method is a useful technique for device design in order to suppress current collapse.

  17. An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Cao Meng-Yi; Lu Yang; Chen Yong-He; Zheng Jia-Xin; Ma Xiao-Hua; Hao Yue; Wei Jia-Xing; Li Wei-Jun

    2014-01-01

    In this paper, a new current expression based on both the direct currect (DC) characteristics of the AlGaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I–V, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide (Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT (10 × 125 μm)). The improved large signal model simulates the I–V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Rapid subsidence and stacked Gilbert-type fan deltas, Pliocene Loreto basin, Baja California Sur, Mexico

    Science.gov (United States)

    Dorsey, Rebecca J.; Umhoefer, Paul J.; Renne, Paul R.

    1995-08-01

    Pliocene nonmarine to marine sedimentary rocks exposed in the Loreto basin, Baja California Sur, provide a record of syntectonic subsidence and sedimentation in a transform-rift basin that developed along the western margin of the Gulf of California. A thick sequence of twelve Gilbert-type fan deltas, having a total measured thickness of about 615 m, accumulated near the fault-bounded southwestern margin of this basin. Based on stratal geometries and lithofacies associations, sedimentary rocks are divided into Gilbert-delta topset, foreset and bottomset strata, shell beds and background shallow-marine shelf deposits. Topset strata of each Gilbert-type delta cycle are capped by laterally persistent molluscan shell beds containing diverse assemblages of bivalves, pectens, oysters, gastropods and echinoids. These shell beds are interpreted to be condensed intervals that record sediment starvation during abandonment of the fan-delta plain. Delta abandonment may have been caused by large episodic faulting events, which submerged each pre-existing fan-delta plain, substantially slowed detrital input by drowning of alluvial feeder channels, and created new accommodation space for each new Gilbert-type fan delta. Alternatively, it is possible that delta-plain abandonment was caused by upstream avulsions and autocyclic lateral switching of fan-delta lobes during relatively uniform rates of slip along the basin-bounding fault. Two contrasting, plausible basin models are proposed for the Loreto basin: (1) asymmetric subsidence along a high-angle oblique-slip normal fault, producing a classic half-graben basin geometry with vertically stacked Gilbert-type fan deltas; or (2) lateral stacking and horizontal displacement of strata away from a relatively fixed depocenter due to fault movement in the releasing bend of a listric strike-slip fault. We favor the first model because field relations and simple geometric constraints suggest that most of the total measured section

  19. Embryonic and larval development in barfin flounder Verasper moseri (Jordan and Gilbert)

    Science.gov (United States)

    Du, Rongbin; Wang, Yongqiang; Jiang, Haibin; Liu, Liming; Wang, Maojian; Li, Tianbao; Zhang, Shubao

    2010-01-01

    Broodstock of Verasper moseri (Jordan and Gilbert) aged 3-4 years old were selected, and reinforced cultivation was conducted to promote maturation under controlled water temperature and photoperiod conditions. Fertilized eggs were obtained by artificial fertilization, and the development of embryos, larvae and juveniles was observed continuously. The results showed that the fertilized eggs of V. moseri were spherical, with transparent yolk and homogeneous bioplasm, and had no oil globule inside. The average diameter of the eggs was 1.77±0.02 mm. The eggs of V. moseri were buoyant in water with salinity above 35. The cleavage type was typical discoidal. Young pigment cells appeared when olfactory plates began to form. Hatching occurred at 187 h after fertilization at a water temperature of 8.5°C. The newly hatched larvae, floating on the water surface, were transparent with an average total length of 4.69±0.15 mm. During the cultivation period, when the water temperature was raised from 9 to 14.5°C, 4-day old larvae showed more melanophores on the body surface, making the larvae gray in color. The pectoral fins began to develop, which enabled the larvae to swim horizontally and in a lively manner. On days 7-8, the digestive duct formed. The yolk sac was small and black. The yolk sac was absorbed on day 11. Larvae took food actively, and body length and body height clearly increased. The rudiments of dorsal and anal fin pterygiophores were discernible and caudal fin ray elements formed on day 19. On day 24, the larval notochord flexed upwards, and the rays of unpaired fins began to differentiate. Pigment cells converged on the dorsal and anal fin rays, and the mastoid teeth on the mandible appeared. On day 29, the left eyes of juveniles began to move upwards. Depigmentation began in some juveniles and they became sandy brown in color on day 37. Most juveniles began to settle on the bottom of the tank. The left eyes of juveniles migrated completely to the right

  20. Algan/Gan Hemt By Magnetron Sputtering System

    Science.gov (United States)

    Garcia Perez, Roman

    In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

  1. A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

    Science.gov (United States)

    Wilkinson, David T.; Page, Lyman

    1995-01-01

    The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

  2. 60Co gamma radiation effect on AlGaN//AlN/GaN HEMT devices

    International Nuclear Information System (INIS)

    Wang Yanping; Luo Yinhong; Wang Wei; Zhang Keying; Guo Hongxia; Guo Xiaoqiang; Wang Yuanming

    2013-01-01

    The testing techniques and experimental methods of the 60 Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained. (authors)

  3. The sensitivity research of multiparameter biosensors based on HEMT by the mathematic modeling method

    Science.gov (United States)

    Tikhomirov, V. G.; Gudkov, A. G.; Agasieva, S. V.; Gorlacheva, E. N.; Shashurin, V. D.; Zybin, A. A.; Evseenkov, A. S.; Parnes, Y. M.

    2017-11-01

    The numerical impact modeling of some external effects on the CVC of biosensors based on AlGaN/GaN heterostructures (HEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure surface in the gate region and to start the process of directed construction optimization of the biosensors based on AlGaN/GaN HEMT with the aim of improving their performance. The calculation of the drain current of the biosensor construction was carried out to confirm the reliability of the developed mathematical model and obtained results.

  4. Investigation of In0.7Ga0.3As/In0.7Al0.3As metamorphic HEMT- heterostructures by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Romanovskiy, D S; LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Tarasov, S A; Galiev, G B; Pushkarev, S S

    2014-01-01

    Low-temperature photoluminescence and photoreflectance have been studied in several metamorphic HEMT- (MHEMT-) heterostructures with the same active regions and different buffer layer designs grown by solid-source molecular beam epitaxy. The indium mole fraction in InAlAs/InGaAs/InAlAs single quantum well (QW) is 0.7. It was found that structures with step-graded metamorphic buffer have better quality. Also it was shown that mismatched superlattices in metamorphic buffer can influence on the half-width of photoluminescence spectra. The possible attribution of photoluminescence and photoreflectance spectral lines and their thermal behaviour are critically discussed

  5. Size stratification in a Gilbert delta due to a varying base level: flume experiments.

    Science.gov (United States)

    Chavarrias, Victor; Orru, Clara; Viparelli, Enrica; Vide, Juan Pedro Martin; Blom, Astrid

    2014-05-01

    A foreset-dominated Gilbert delta is a delta that is dominated by sediment avalanches (i.e., discontinuous grain flows) over its front. It forms when a river flows into a basin or sea characterized by a flow depth that is much larger than the one in the fluvial reach, and the conditions are such that the transported sediment passing the brinkpoint forms a wedge at the topmost part of the foreset, which results in avalanches down the foreset and a fining upward pattern within the foreset deposit. A Gilbert delta is typically described in terms of a low-slope topset (resulting from deposition over the fluvial reach), a steep-slope foreset (resulting from sediment avalanches over the lee face), and a bottomset (resulting from deposition of fine sediment passing the brinkpoint as suspended load). The objective of the present study is to gain insight into the mechanisms taking part in Gilbert delta formation and progradation under variable base level conditions. In order to do so, three flume experiments were conducted in which the water discharge and sediment feed rate were maintained constant but the base level varied between the experiments: (I) constant base level, (II) a gradually rising base level, and (III) a slowly varying base level. The stratigraphy within the delta deposit was measured using image analysis combined with particle coloring. A steady base level resulted in aggradation over the fluvial reach in order to maintain a slope required to transport the supplied sediment downstream. Sea level rise enhanced the amount of aggradation over the fluvial reach due to the presence of an M1 backwater curve. The aggrading flux to the substrate was slightly coarser than the fed sediment. The sediment at the base of the foreset deposit appeared to become coarser in streamwise direction. Eventually, a fall of the base level induced an M2 backwater curve over the fluvial reach that caused degradation of the fluvial reach. Base level fall first induced erosion of the

  6. Polynomial-time computability of the edge-reliability of graphs using Gilbert's formula

    Directory of Open Access Journals (Sweden)

    Thomas J. Marlowe

    1998-01-01

    Full Text Available Reliability is an important consideration in analyzing computer and other communication networks, but current techniques are extremely limited in the classes of graphs which can be analyzed efficiently. While Gilbert's formula establishes a theoretically elegant recursive relationship between the edge reliability of a graph and the reliability of its subgraphs, naive evaluation requires consideration of all sequences of deletions of individual vertices, and for many graphs has time complexity essentially Θ (N!. We discuss a general approach which significantly reduces complexity, encoding subgraph isomorphism in a finer partition by invariants, and recursing through the set of invariants.

  7. Ginzburg-Landau vortices driven by the Landau-Lifshitz-Gilbert equation

    Energy Technology Data Exchange (ETDEWEB)

    Kurzke, Matthias; Melcher, Christof; Moser, Roger; Spirn, Daniel

    2009-06-15

    A simplified model for the energy of the magnetization of a thin ferromagnetic film gives rise to a version of the theory of Ginzburg-Landau vortices for sphere-valued maps. In particular we have the development of vortices as a certain parameter tends to 0. The dynamics of the magnetization is ruled by the Landau-Lifshitz-Gilbert equation, which combines characteristic properties of a nonlinear Schroedinger equation and a gradient flow. This paper studies the motion of the vortex centers under this evolution equation. (orig.)

  8. Ginzburg-Landau vortices driven by the Landau-Lifshitz-Gilbert equation

    International Nuclear Information System (INIS)

    Kurzke, Matthias; Melcher, Christof; Moser, Roger; Spirn, Daniel

    2009-01-01

    A simplified model for the energy of the magnetization of a thin ferromagnetic film gives rise to a version of the theory of Ginzburg-Landau vortices for sphere-valued maps. In particular we have the development of vortices as a certain parameter tends to 0. The dynamics of the magnetization is ruled by the Landau-Lifshitz-Gilbert equation, which combines characteristic properties of a nonlinear Schroedinger equation and a gradient flow. This paper studies the motion of the vortex centers under this evolution equation. (orig.)

  9. Transient analysis of scattering from ferromagnetic objects using Landau-Lifshitz-Gilbert and volume integral equations

    KAUST Repository

    Sayed, Sadeed Bin

    2016-11-02

    An explicit marching on-in-time scheme for analyzing transient electromagnetic wave interactions on ferromagnetic scatterers is described. The proposed method solves a coupled system of time domain magnetic field volume integral and Landau-Lifshitz-Gilbert (LLG) equations. The unknown fluxes and fields are discretized using full and half Schaubert-Wilton-Glisson functions in space and bandlimited temporal interpolation functions in time. The coupled system is cast in the form of an ordinary differential equation and integrated in time using a PE(CE)m type linear multistep method to obtain the unknown expansion coefficients. Numerical results demonstrating the stability and accuracy of the proposed scheme are presented.

  10. Transient analysis of scattering from ferromagnetic objects using Landau-Lifshitz-Gilbert and volume integral equations

    KAUST Repository

    Sayed, Sadeed Bin; Ulku, Huseyin Arda; Bagci, Hakan

    2016-01-01

    An explicit marching on-in-time scheme for analyzing transient electromagnetic wave interactions on ferromagnetic scatterers is described. The proposed method solves a coupled system of time domain magnetic field volume integral and Landau-Lifshitz-Gilbert (LLG) equations. The unknown fluxes and fields are discretized using full and half Schaubert-Wilton-Glisson functions in space and bandlimited temporal interpolation functions in time. The coupled system is cast in the form of an ordinary differential equation and integrated in time using a PE(CE)m type linear multistep method to obtain the unknown expansion coefficients. Numerical results demonstrating the stability and accuracy of the proposed scheme are presented.

  11. Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

    Science.gov (United States)

    Kangaslahti, Pekka; Schlecht, Erich; Samoska, Lorene

    2009-01-01

    Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have

  12. Individuação, percepção, ambiente: Merleau-Ponty e Gilbert Simondon Individuation, perception, environment: Merleau-Ponty and Gilbert Simondon

    Directory of Open Access Journals (Sweden)

    Andréia A. Marin

    2009-12-01

    Full Text Available Este trabalho trata da individuação e da percepção a partir de duas filosofias contemporâneas: os fundamentos fenomenológicos da percepção (Merleau-Ponty e as relações entre percepção e individuação (Gilbert Simondon. Essas duas composições teóricas podem criar outros espaços de reflexão para as pesquisas em percepção ambiental. A percepção primordial, a importância da corporeidade como redescoberta do mundo vivido e a experiência estética que instaura os espaços de criação nas artes são categorias merleau-pontianas que permitem redimensionar os significados da relação humano-ambiente. O "diálogo" entre essas experiências de criação (discutidas por Merleau-Ponty e os processos de individuação da/com a percepção (Simondon pode suscitar novas abordagens de partida para estudos em percepção ambiental, inspirando novas possibilidades no domínio da Educação Ambiental.This work deals with individuation and perception from two contemporary philosophies. Phenomenological foundations of perception (Merleau-Ponty and the connections between perception and individuation (Gilbert Simondon. These two theoretical compositions may encourage reflections on researches into environmental perception. The primordial perception, the importance of corporeity as the rediscovery of a living world and the aesthetic experience that may restore spaces of creation in the arts are Merleau-Ponty's categories which allow a re-evaluation of the human-environment relationship. The "dialog" between these creation experiences (Merleau-Ponty and the processes of individuation of/with perception (Simondon may suggest new approaches to studies in environmental perception, inspire new possibilities in environmental education.

  13. Perfluorocarbons and Gilbert syndrome (phenotype) in the C8 Health Study Population

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Hongmin [Cancer Center, School of Public Health, West Virginia University, Morgantown, WV 265050-9190 (United States); Department of Epidemiology and Statistics, School of Public Health, Hebei United University, Hebei 063000 (China); Ducatman, Alan [Department of Occupational and Environmental Health, School of Public Health, West Virginia University (United States); Department of Medicine, School of Medicine, West Virginia University (United States); Clinical Translational Science Institute, West Virginia University (United States); Zhang, Jianjun [Department of Biostatistics, School Public Health, West Virginia University (United States)

    2014-11-15

    Background: Gilbert syndrome (GS) is an inherited defect of bilirubin conjugation, most commonly caused by a gene mutation for the enzyme UGT1A. GS is known to affect the metabolism and excretion of drugs and xenobiotics. Perfluorocarbon compounds (PFCs) are bio-persistent environmental contaminants that affect metabolic regulation. In this study, we examined the associations of GS phenotype and serum PFCs in the C8 Health Study Population. Materials and methods: Using 2005–2006 data from a large PFC-exposure population survey, we compared serum PFCs concentrations between GS and non GS clinical phenotypes, in a cross sectional design, adjusting for standard risk factors, including age, BMI, smoking status, socioeconomic status and gender. Results: Among 10 PFC compounds considered, only perfluorohexanoic acid (PFHxA) was seen at a significantly higher concentration in GS men and women. Conclusion: PFHxA exposure may be associated with GS. Our findings do not support increased exposure in GS for other PFCs. - Highlights: • Most serum PFCs are not associated with clinically evident Gilbert syndrome. • However, serum perfluorohexanoic acid is positively associated. • The investigation addresses the clinical presentation, not the genetic mutation.

  14. Polynomial-time computability of the edge-reliability of graphs using Gilbert's formula

    Directory of Open Access Journals (Sweden)

    Marlowe Thomas J.

    1998-01-01

    Full Text Available Reliability is an important consideration in analyzing computer and other communication networks, but current techniques are extremely limited in the classes of graphs which can be analyzed efficiently. While Gilbert's formula establishes a theoretically elegant recursive relationship between the edge reliability of a graph and the reliability of its subgraphs, naive evaluation requires consideration of all sequences of deletions of individual vertices, and for many graphs has time complexity essentially Θ (N!. We discuss a general approach which significantly reduces complexity, encoding subgraph isomorphism in a finer partition by invariants, and recursing through the set of invariants. We illustrate this approach using threshhold graphs, and show that any computation of reliability using Gilbert's formula will be polynomial-time if and only if the number of invariants considered is polynomial; we then show families of graphs with polynomial-time, and non-polynomial reliability computation, and show that these encompass most previously known results. We then codify our approach to indicate how it can be used for other classes of graphs, and suggest several classes to which the technique can be applied.

  15. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  16. A gate current 1/f noise model for GaN/AlGaN HEMTs

    International Nuclear Information System (INIS)

    Liu Yu'an; Zhuang Yiqi

    2014-01-01

    This work presents a theoretical and experimental study on the gate current 1/f noise in AlGaN/GaN HEMTs. Based on the carrier number fluctuation in the two-dimensional electron gas channel of AlGaN/GaN HEMTs, a gate current 1/f noise model containing a trap-assisted tunneling current and a space charge limited current is built. The simulation results are in good agreement with the experiment. Experiments show that, if V g < V x (critical gate voltage of dielectric relaxation), gate current 1/f noise comes from the superimposition of trap-assisted tunneling RTS (random telegraph noise), while V g > V x , gate current 1/f noise comes from not only the trap-assisted tunneling RTS, but also the space charge limited current RTS. This indicates that the gate current 1/f noise of the GaN-based HEMTs device is sensitive to the interaction of defects and the piezoelectric relaxation. It provides a useful characterization tool for deeper information about the defects and their evolution in AlGaN/GaN HEMTs. (semiconductor devices)

  17. Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

    NARCIS (Netherlands)

    Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

    2005-01-01

    In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

  18. Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate

    International Nuclear Information System (INIS)

    Cheng, Stone; Chou, Po-Chien; Chieng, Wei-Hua; Chang, E.Y.

    2013-01-01

    This work presents a technology for packaging AlGaN/GaN high electron mobility transistors (HEMTs) on a Si substrate. The GaN HEMTs are attached to a V-groove copper base and mounted on a TO-3P leadframe. The various thermal paths from the GaN gate junction to the case are carried out for heat dissipation by spreading to protective coating; transferring through the bond wires; spreading in the lateral device structure through the adhesive layer, and vertical heat spreading of silicon chip bottom. Thermal characterization showed a thermal resistance of 13.72 °C/W from the device to the TO-3P package. Experimental tests of a 30 mm gate-periphery single chip packaged in a 5 × 3 mm V-groove Cu base with a 100 V drain bias showed power dissipation of 22 W. -- Highlights: ► An enhanced packaging structure designed for AlGaN/GaN HEMTs on an Si substrate. ► The V-groove copper base is designed on the device periphery surface heat conduction for enhancing Si substrate thermal dissipation. ► The proposed device shows a lower thermal resistance and upgrade in thermal conductivity capability. ► This work provides useful thermal IR imagery information to aid in designing high efficiency package for GaN HEMTs on Si

  19. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

    Science.gov (United States)

    Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

    2015-10-01

    Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

  20. GaN growth on sapphire by MOCVD - Material for HEMT structures

    NARCIS (Netherlands)

    Grzegorczyk, A.P.

    2006-01-01

    This thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed.

  1. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  2. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  3. Attacking Urban Poverty: The Role of the SNDT Women's University, Mumbai, India--The "Gilbert Hill Programme". Strategies of Education and Training for Disadvantaged Groups.

    Science.gov (United States)

    Kamath, M.; Udipi, S. A.; Varghese, M. A.

    This study examined the role of the SNDT (formerly Shreemati Nathibai Damodar Thackersey) University in reducing poverty in the Gilbert Hill-Gamdevi Dongri area of Mumbai, India. The Gilbert Hill area accommodates around 1 million people, most of whom are migrants form other parts of India. The Department of Post-Graduate Studies and Research in…

  4. Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco

    2016-01-01

    contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours......In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main...

  5. Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application

    Science.gov (United States)

    Nirmal, D.; Arivazhagan, L.; Fletcher, A. S. Augustine; Ajayan, J.; Prajoon, P.

    2018-01-01

    In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal equivalent circuit of AlGaN/GaN HEMT is developed and a new drain current model is derived. This model is useful to correlate the impact of intrinsic capacitance and conductance on drain current collapse. The proposed device suppressed the current collapse phenomena by 10% compared with the conventional AlGaN/GaN HEMT. Moreover, the DC characteristics of the simulated device shows a drain current of 900 mA/mm, breakdown voltage of 291 V and transconductance of 175 mS/mm. Besides, the intrinsic capacitance and conductance parameters are extracted and its impact on drain current is analysed. Finally, the simulation results obtained were in compliance with the derived mathematical model of AlGaN/GaN HEMT.

  6. Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Cordier, Y.; Lecotonnec, A.; Chenot, S. [CRHEA-CNRS, Valbonne (France); Baron, N. [CRHEA-CNRS, Valbonne (France); PICOGIGA International, Courtaboeuf (France); Nacer, F.; Goullet, A.; Besland, M.P. [Institut des Materiaux Jean Rouxel IMN, Universite de Nantes (France); Lhermite, H. [Institut d' Electronique et de Telecommunications de Rennes (IETR), Universite de Rennes 1 (France); El Kazzi, M.; Regreny, P.; Hollinger, G. [Institut des Nanotechnologies de Lyon, Ecole Centrale de Lyon, UMR CNRS, Ecully (France)

    2009-06-15

    In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiN{sub x} dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and current-voltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Situation Report--Dominican Republic, Ethiopia, Gilbert and Ellice Islands, Laos, Liberia, Republic of Vietnam, Seychelles, Tahiti (French Polynesia).

    Science.gov (United States)

    International Planned Parenthood Federation, London (England).

    Data relating to population and family planning in eight foreign countries are presented in these situation reports. Countries included are Dominical Republic, Ethiopia, Gilbert and Ellice Islands, Laos, Liberia, Republic of Vietnam, Seychelles, and Tahiti (French Polynesia). Information is provided, where appropriate and available, under two…

  8. Author's Response to Commentaries on: "An Interpretation of Part of Gilbert Gottlieb's Legacy: Developmental Systems Theory Contra Developmental Behavior Genetics"

    Science.gov (United States)

    Molenaar, Peter C. M.

    2015-01-01

    In this article, Peter Molenaar responds to three commentaries (this issue) on his article, "An Interpretation of Part of Gilbert Gottlieb's Legacy: Developmental Systems Theory Contra Developmental Behavior Genetics." He addresses aspects of relational developmental systems (RDS) mentioned and questions raised in each of the…

  9. Temperature-dependent Gilbert damping of Co2FeAl thin films with different degree of atomic order

    Science.gov (United States)

    Kumar, Ankit; Pan, Fan; Husain, Sajid; Akansel, Serkan; Brucas, Rimantas; Bergqvist, Lars; Chaudhary, Sujeet; Svedlindh, Peter

    2017-12-01

    Half-metallicity and low magnetic damping are perpetually sought for spintronics materials, and full Heusler compounds in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler compound thin films, and theory has struggled to establish a fundamental understanding of the temperature-dependent Gilbert damping in these systems. Here we present a study of the temperature-dependent Gilbert damping of differently ordered as-deposited Co2FeAl full Heusler compound thin films. The sum of inter- and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states governs the Gilbert damping for the well-ordered phase, in contrast to the damping of partially ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room-temperature intrinsic damping observed for the well-ordered phase, provide fundamental insights into the physical origin of the Gilbert damping in full Heusler compound thin films.

  10. Differential Treatment of Pregnancy in Employment: The Impact of "General Electric Co. v. Gilbert" and "Nashville Gas Co. v. Satty."

    Science.gov (United States)

    Taylor, Ellen T.

    1978-01-01

    After discussing the facts and reasoning of the two cases (General Electric Co. vs Gilbert and Nashville Gas Co. vs Satty), the author argues that the decisions are largely the product of pregnancy stereotypes and that the Court's reasoning is flawed and should not be applied outside the context of pregnancy. Journal availability: see EA 511 481.…

  11. National Geographic Education. An Interview with Gilbert M. Grosvenor, President and Chairman of the Board, National Geographic Society.

    Science.gov (United States)

    Jumper, Sidney R.

    1991-01-01

    Presents an interview with Gilbert Grosvenor, president and chairman of the board of the National Geographic Society. Examines student and public ignorance about geography. Describes the Society's Geography Education Project, Geographic Alliance Project, and Education Foundation. Includes Grosvenor's call for greater emphasis on geography in…

  12. Comics and the Structure of Childhood Feeling: Sublimation and the Play of Pretending in Gilbert Hernandez's "Marble Season"

    Science.gov (United States)

    Lewkowich, David

    2016-01-01

    In this paper, I study the narrative structure of comics as a means to describe the ways that indeterminate modes of representation can allow the reader to imagine that which in childhood can never be fully expressed. Analyzing a number of panels from Gilbert Hernandez's graphic novel, "Marble Season," I describe a conceptual link…

  13. High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2015-01-01

    Full Text Available A novel enhancement-mode (E-mode Metal-Insulator-Semiconductor- (MIS- HEMT with selective fluorine ion (F− treatment is proposed and its mechanism is investigated. The HEMT features the Selective F− treatment both in the AlGaN channel region and in the thick passivation layer between the gate and drain (SFCP-MIS-HEMT. First, the F− in the passivation layer not only extends the depletion region and thus enhances the average electric field (E-field between the gate and drain by the assisted depletion effect but also reduces the E-field peak at the gate end, leading to a higher breakdown voltage (BV. Second, in the AlGaN channel region, the F− region realizes the E-mode and the region without F− maintains a high drain current (ID. Third, MIS structure suppresses the gate leakage current, increasing the gate swing voltage and the BV. Compared with a MIS-HEMT with F− treatment in whole channel (FC-MIS-HEMT, SFCP-MIS-HEMT increases the BV by 46% and the saturation drain current (ID,sat by 28%.

  14. Influence of the Gilbert damping constant on the flux rise time of write head fields

    International Nuclear Information System (INIS)

    Ertl, Othmar; Schrefl, Thomas; Suess, Dieter; Schabes, Manfred E.

    2005-01-01

    Magnetic recording at fast data rates requires write heads with rapid rise times of the magnetic flux during the write process. We present three-dimensional (3D) micromagnetic finite element calculations of an entire ring head including 3D coil geometry during the writing of magnetic bits in granular media. The simulations demonstrate how input current profiles translate into magnetization processes in the head and which in turn generate the write head field. The flux rise time significantly depends on the Gilbert damping constant of the head material. Low damping causes incoherent magnetization processes, leading to long rise times and low head fields. High damping leads to coherent reversal of the magnetization in the head. As a consequence, the gap region can be quickly saturated which causes high head fields with short rise times

  15. Replication and Pedagogy in the History of Psychology IV: Patrick and Gilbert (1896) on Sleep Deprivation

    Science.gov (United States)

    Fuchs, Thomas; Burgdorf, Jeffrey

    2008-05-01

    We report an attempted replication of G. T. W. Patrick and J. A. Gilbert’s pioneering sleep deprivation experiment ‘Studies from the psychological laboratory of the University of Iowa. On the effects of loss of sleep’, conducted in 1895/96. Patrick and Gilbert’s study was the first sleep deprivation experiment of its kind, performed by some of the first formally trained psychologists. We attempted to recreate the original experience in two subjects, using similar apparatus and methodology, and drawing direct comparisons to the original study whenever possible. We argue for a strong influence of an ‘Americanized’ Wundtian psychology on Patrick and Gilbert, a claim supported biographically by their education and by their experimental methods. The replication thus opens interesting new perspectives, which are unlikely to be generated by any other historical approach.

  16. Direct detection of metal-insulator phase transitions using the modified Backus-Gilbert method

    Directory of Open Access Journals (Sweden)

    Ulybyshev Maksim

    2018-01-01

    Full Text Available The detection of the (semimetal-insulator phase transition can be extremely difficult if the local order parameter which characterizes the ordered phase is unknown. In some cases, it is even impossible to define a local order parameter: the most prominent example of such system is the spin liquid state. This state was proposed to exist in the Hubbard model on the hexagonal lattice in a region between the semimetal phase and the antiferromagnetic insulator phase. The existence of this phase has been the subject of a long debate. In order to detect these exotic phases we must use alternative methods to those used for more familiar examples of spontaneous symmetry breaking. We have modified the Backus-Gilbert method of analytic continuation which was previously used in the calculation of the pion quasiparticle mass in lattice QCD. The modification of the method consists of the introduction of the Tikhonov regularization scheme which was used to treat the ill-conditioned kernel. This modified Backus-Gilbert method is applied to the Euclidean propagators in momentum space calculated using the hybrid Monte Carlo algorithm. In this way, it is possible to reconstruct the full dispersion relation and to estimate the mass gap, which is a direct signal of the transition to the insulating state. We demonstrate the utility of this method in our calculations for the Hubbard model on the hexagonal lattice. We also apply the method to the metal-insulator phase transition in the Hubbard-Coulomb model on the square lattice.

  17. Lower Badenian coarse-grained Gilbert deltas in the southern margin of the Western Carpathian Foredeep basin

    Science.gov (United States)

    Nehyba, Slavomír

    2018-02-01

    Two coarse-grained Gilbert-type deltas in the Lower Badenian deposits along the southern margin of the Western Carpathian Foredeep (peripheral foreland basin) were newly interpreted. Facies characterizing a range of depositional processes are assigned to four facies associations — topset, foreset, bottomset and offshore marine pelagic deposits. The evidence of Gilbert deltas within open marine deposits reflects the formation of a basin with relatively steep margins connected with a relative sea level fall, erosion and incision. Formation, progradation and aggradation of the thick coarse-grained Gilbert delta piles generally indicate a dramatic increase of sediment supply from the hinterland, followed by both relatively continuous sediment delivery and an increase in accommodation space. Deltaic deposition is terminated by relatively rapid and extended drowning and is explained as a transgressive event. The lower Gilbert delta was significantly larger, more areally extended and reveals a more complicated stratigraphic architecture than the upper one. Its basal surface represents a sequence boundary and occurs around the Karpatian/Badenian stratigraphic limit. Two coeval deltaic branches were recognized in the lower delta with partly different stratigraphic arrangements. This different stratigraphic architecture is mostly explained by variations in the sediment delivery and /or predisposed paleotopography and paleobathymetry of the basin floor. The upper delta was recognized only in a restricted area. Its basal surface represents a sequence boundary probably reflecting a higher order cycle of a relative sea level rise and fall within the Lower Badenian. Evidence of two laterally and stratigraphically separated coarse-grained Gilbert deltas indicates two regional/basin wide transgressive/regressive cycles, but not necessarily of the same order. Provenance analysis reveals similar sources of both deltas. Several partial source areas were identified (Mesozoic

  18. Proton-Induced Conductivity Enhancement in AlGaN/GaN HEMT Devices

    Science.gov (United States)

    Lee, In Hak; Lee, Chul; Choi, Byoung Ki; Yun, Yeseul; Chang, Young Jun; Jang, Seung Yup

    2018-04-01

    We investigated the influence of proton irradiation on the AlGaN/GaN high-electron-mobility transistor (HEMT) devices. Unlike previous studies on the degradation behavior upon proton irradiation, we observed improvements in their electrical conductivity and carrier concentration of up to 25% for the optimal condition. As we increased the proton dose, the carrier concentration and the mobility showed a gradual increase and decrease, respectively. From the photoluminescence measurements, we observed a reduction in the near-band-edge peak of GaN ( 366 nm), which correlate on the observed electrical properties. However, neither the Raman nor the X-ray diffraction analysis showed any changes, implying a negligible influence of protons on the crystal structures. We demonstrated that high-energy proton irradiation could be utilized to modify the transport properties of HEMT devices without damaging their crystal structures.

  19. Noise performance in AlGaN/GaN HEMTs under high drain bias

    International Nuclear Information System (INIS)

    Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

    2009-01-01

    The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

  20. AlGaN/GaN HEMT structures on ammono bulk GaN substrate

    International Nuclear Information System (INIS)

    Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

    2014-01-01

    The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

  1. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

    Science.gov (United States)

    Chang, Tzu-Hsuan; Xiong, Kanglin; Park, Sung Hyun; Yuan, Ge; Ma, Zhenqiang; Han, Jung

    2017-07-25

    Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO 2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

  2. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    Science.gov (United States)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  3. Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Kaushik, J K; Balakrishnan, V R; Muralidharan, R; Panwar, B S

    2013-01-01

    The experimentally observed inverse temperature dependence of the reverse gate leakage current in AlGaN/GaN HEMT is explained using a virtual gate trap-assisted tunneling model. The virtual gate is formed due to the capture of electrons by surface states in the vicinity of actual gate. The increase and decrease in the length of the virtual gate with temperature due to trap kinetics are used to explain this unusual effect. The simulation results have been validated experimentally. (paper)

  4. Optical Sensitivity of a Monolithic Integrated InP PIN-HEMT-HBT Transimpedance Amplifier

    OpenAIRE

    Matiss, A.; Janssen, G.; Bertenburg, R. M.; Brockerhoff, W.; Tegude, F.J.

    2004-01-01

    To improve sensitivity of optical receivers, a special integration concept is chosen that includes a pinphotodiode, high-electron mobility transistors (HEMT) and heterostructure bipolar transistors (HBT) on a single substrate. This work focuses on the optimization of the amplifier design to achieve lowest input noise currents of a transimpedance amplifier, and thus highest receiver sensitivity. The respective advantages of the components used are investigated with respect...

  5. Demonstration of a Submillimeter-Wave HEMT Oscillator Module at 330 GHz

    Science.gov (United States)

    Radisic, Vesna; Deal, W. R.; Mei, X. B.; Yoshida, Wayne; Liu, P. H.; Uyeda, Jansen; Lai, Richard; Samoska, Lorene; Fung, King Man; Gaier, Todd; hide

    2010-01-01

    In this work, radial transitions have been successfully mated with a HEMT-based MMIC (high-electron-mobility-transistor-based monolithic microwave integrated circuit) oscillator circuit. The chip has been assembled into a WR2.2 waveguide module for the basic implementation with radial E-plane probe transitions to convert the waveguide mode to the MMIC coplanar waveguide mode. The E-plane transitions have been directly integrated onto the InP substrate to couple the submillimeter-wave energy directly to the waveguides, thus avoiding wire-bonds in the RF path. The oscillator demonstrates a measured 1.7 percent DC-RF efficiency at the module level. The oscillator chip uses 35-nm-gate-length HEMT devices, which enable the high frequency of oscillation, creating the first demonstration of a packaged waveguide oscillator that operates over 300 GHz and is based on InP HEMT technology. The oscillator chip is extremely compact, with dimensions of only 1.085 x 320 sq mm for a total die size of 0.35 sq mm. This fully integrated, waveguide oscillator module, with an output power of 0.27 mW at 330 GHz, can provide low-mass, low DC-power-consumption alternatives to existing local oscillator schemes, which require high DC power consumption and large mass. This oscillator module can be easily integrated with mixers, multipliers, and amplifiers for building high-frequency transmit and receive systems at submillimeter wave frequencies. Because it requires only a DC bias to enable submillimeter wave output power, it is a simple and reliable technique for generating power at these frequencies. Future work will be directed to further improving the applicability of HEMT transistors to submillimeter wave and terahertz applications. Commercial applications include submillimeter-wave imaging systems for hidden weapons detection, airport security, homeland security, and portable low-mass, low-power imaging systems

  6. Effects of combined gate and ohmic recess on GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Sunil Kumar

    2016-09-01

    Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

  7. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Koo, Sang-Mo; Kang, Min-Seok

    2014-01-01

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV th = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10 7 A/cm 2 ) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10 7 A/cm 2 ). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration

  8. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Sang-Mo, E-mail: smkoo@kw.ac.kr; Kang, Min-Seok, E-mail: hyde0220@gmail.com

    2014-10-15

    Highlights: • We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors. • We demonstrate the effect of the barrier height of Schottky gate metals. • The conduction mechanisms examine by comparing the experimental results with numerical simulations. • 2-DEG concentration depends on the barrier height of Schottky gate metals. - Abstract: We investigated transfer characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) and the effect of the barrier height of Schottky gate metals. It is found that the threshold voltage of the HEMT structures with the Ni Schottky contact shows a positive shift compared to that of the Ti Schottky contacts (ΔV{sub th} = 2.9 V). The maximum saturation current of the HEMT structures with the Ti Schottky contact (∼1.4 × 10{sup 7} A/cm{sup 2}) is found to be ∼2.5 times higher than that of the Ni Schottky contact (2.9 × 10{sup 7} A/cm{sup 2}). The conduction mechanisms have been examined by comparing the experimental results with numerical simulations, which confirm that the increased barrier height is mainly attributed to the reduction of 2-DEG concentration.

  9. Noise characterization of enhancement-mode AlGaN graded barrier MIS-HEMT devices

    Science.gov (United States)

    Mohanbabu, A.; Saravana Kumar, R.; Mohankumar, N.

    2017-12-01

    This paper reports a systematic theoretical study on the microwave noise performance of graded AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MIS-HEMTs) built on an Al2O3 substrate. The HfAlOx/AlGaN/GaN MIS-HEMT devices designed for this study show an outstanding small signal analog/RF and noise performance. The results on 1 μm gate length device show an enhancement mode operation with threshold voltage, VT = + 5.3 V, low drain leakage current, Ids,LL in the order of 1 × 10-9 A/mm along with high current gain cut-off frequency, fT of 17 GHz and maximum oscillation frequency fmax of 47 GHz at Vds = 10 V. The device Isbnd V and low-frequency noise estimation of the gate and drain noise spectral density and their correlation are evaluated using a Green's function method under different biasing conditions. The devices show a minimum noise figure (NFmin) of 1.053 dB in combination with equivalent noise resistance (Rn) of 23 Ω at 17 GHz, at Vgs = 6 V and Vds = 5 V which is relatively low and is suitable for broad-band low-noise amplifiers. This study shows that the graded AlGaN MIS-HEMT with HfAlOX gate insulator is appropriate for application requiring high-power and low-noise.

  10. New AlGaN/GaN HEMTs employing both a floating gate and a field plate

    International Nuclear Information System (INIS)

    Lim, Jiyong; Choi, Young-Hwan; Kim, Young-Shil; Han, Min-Koo

    2010-01-01

    We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate-drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of -100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm -1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm -1 , respectively. The maximum transconductance of the proposed device was 102.9 mS mm -1 , while those of the conventional devices were 97.8 and 101.9 mS mm -1 . The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.

  11. A novel GaN HEMT with double recessed barrier layer for high efficiency-energy applications

    Science.gov (United States)

    Jia, Hujun; Luo, Yehui; Wu, Qiuyuan; Yang, Yintang

    2017-11-01

    In this paper, a novel GaN HEMT with high efficiency-energy characteristic is proposed. Different from the conventional structure, the proposed structure contains double recessed barriers layer (DRBL) beside the gate. The key idea in this work is to improve the microwave output characteristics. The simulated results show that the drain saturation current and peak transconductance of DRBL GaN HEMT is slightly decreased, the transconductance saturation flatness is increased by 0.5 V and the breakdown voltage is also enhanced too. Due to the both recessed barrier layer, the gate-drain/gate-source capacitance is decreased by 6.3% and 11.3%, respectively. The RF simulated results show that the maximum oscillation frequency for DRBL GaN HEMT is increased from 57 GHz to 64 GHz and the saturation power density is 8.7 W/mm at 600 MHz, 6.9 W/mm at 1200 MHz with the higher power added efficiency (PAE). Further investigation show that DRBL GaN HEMT can achieve to 6.4 W/mm and the maximum PAE 83.8% at 2400 MHz. Both are higher than the 5.0 W/mm and 80.3% for the conventional structure. When the operating frequency increases to X band, the DRBL GaN HEMT still exhibits the superior output performances. All the results show that the advantages and the potential capacities of DRBL GaN HEMT at high efficiency-energy are greater than the conventional GaN HEMT.

  12. A dual-mode driver IC with monolithic negative drive-voltage capability and digital current-mode controller for depletion-mode GaN HEMT

    NARCIS (Netherlands)

    Wen, Y.; Rose, M.; Fernandes, R.; van Otten, R.; Bergveld, H.J.; Trescases, O.

    2017-01-01

    This work presents a driver and controller integrated circuit (IC) for depletion-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The dual-mode driver can be configured for cascode-drive (CD) or HEMT-drive (HD) mode. In the CD mode, a cascode low-voltage DMOS is driven to

  13. Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Yang, Yongheng; Iannuzzo, Francesco

    2016-01-01

    In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different possibil......In this paper, thermal loading of the state-of-the-art GaN HEMTs and traditional Si IGBTs in 3L-ANPC PV inverters is presented considering real-field long-term mission profiles (i.e., ambient temperature and solar irradiance). A comparison of Si IGBT against GaN HEMT with three different...... be achieved without compromise of operating efficiency with GaN HEMTs. Both simulations and experimental tests are provided to demonstrate the thermal loading analysis approach. More important, the proposed analysis and comparison approach can be used for lifetime and reliability analysis of wide...

  14. Ideias sobre progresso técnico em Vilém Flusser e Gilbert Simondon

    Directory of Open Access Journals (Sweden)

    Angélica Beatriz Castro Guimarães

    2013-07-01

    Full Text Available http://dx.doi.org/10.5007/1807-9288.2013v9n1p172   Esse artigo apresenta algumas ideias sobre o progresso técnico e a relação humano-máquina em Vilém Flusser e Gilbert Simondon. Os dois autores apresentam conceitos bem diferentes sobre a técnica, mas ambos projetam seus argumentos para a situação de intensificação técnica que ocorre a partir de meados do século XX. Simondon pensa a geração de objetos técnicos como modulação de intensidades. Flusser concebe o progresso técnico como uma escalada de abstração que não se encerra como modelo linear e acumulativo. Os dois autores pensam a situação de desorientação diante da aparente intencionalidade dos objetos técnicos. A partir dos conceitos propostos é possível pensar sobre a modulação do fluxo técnico pela arte no campo da sensibilidade.

  15. Informational Ontology: The Meaning of Gilbert Simondon’s Concept of Individuation

    Directory of Open Access Journals (Sweden)

    Andrew Iliadis

    2013-09-01

    Full Text Available The French philosopher Gilbert Simondon (1924-1989 was the first true philosopher of information, yet he remains relatively unknown outside of his native France. This situation is curious, given the warm reception his work has received from a small group of internationally renowned thinkers. Simondon’s lifelong project was to expound the appearance of what I call an “informational ontology,” a subject that deserves to be addresses at length. This article limits itself by focusing on three aspects of Simondon’s philosophy of information. First, it situates Simondon within the French intellectual scene in post-World War II Europe to get sense of his cultural milieu. Second, it positions Simondon’s work in the context of the American cybernetic tradition from which it emerged. Finally, it offers an exegesis of Simondon’s informational ontology, a radically new materialism that stands to change contemporary debates surrounding issues related to information, communication, and technology.

  16. Gilbert damping constant of FePd alloy thin films estimated by broadband ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Kawai T.

    2014-07-01

    Full Text Available Magnetic relaxation of FePd alloy epitaxial thin films with very flat surfaces prepared on MgO(001 substrate are measured by in-plane broadband ferromagnetic resonance (FMR. Magnetic relaxation is investigated as Δω for FMR absorption peak by frequency sweep measurements. ΔH is calculated by using the measured Δω. Gilbert damping constant, α, is estimated by employing a straight line fitting of the resonant frequency dependence of ΔH. The α value for an FePd film deposited at 200 ˚C, which shows disordered A1 structure, is 0.010 and ΔH0, which is frequency independent part of ΔH, is 10 Oe. The α value for a film annealed at 400 ˚C, which shows partially L10 ordered structure (S=0.32, is 0.013, which is slightly larger than that for the disorder A1 structure film. However, ΔH0 for the annealed film is 85 Oe, which is much larger than that for the film with disordered structure. The results show that the magnetic relaxation of the 400 ˚C annealed film is mainly dominated by ΔH0, which is related with magnetic in-homogeneity caused by the appearance of perpendicular anisotropy of partially ordered phase.

  17. The absence of intraband scattering in a consistent theory of Gilbert damping in pure metallic ferromagnets.

    Science.gov (United States)

    Edwards, D M

    2016-03-02

    Damping of magnetization dynamics in a ferromagnetic metal, arising from spin-orbit coupling, is usually characterised by the Gilbert parameter α. Recent calculations of this quantity, using a formula due to Kambersky, find that it is infinite for a perfect crystal owing to an intraband scattering term which is of third order in the spin-orbit parameter ξ. This surprising result conflicts with recent work by Costa and Muniz who study damping numerically by direct calculation of the dynamical transverse susceptibility in the presence of spin-orbit coupling. We resolve this inconsistency by following the approach of Costa and Muniz for a slightly simplified model where it is possible to calculate α analytically. We show that to second order in ξ one retrieves the Kambersky result for α, but to higher order one does not obtain any divergent intraband terms. The present work goes beyond that of Costa and Muniz by pointing out the necessity of including the effect of long-range Coulomb interaction in calculating damping for large ξ. A direct derivation of the Kambersky formula is given which shows clearly the restriction of its validity to second order in ξ so that no intraband scattering terms appear. This restriction has an important effect on the damping over a substantial range of impurity content and temperature. The experimental situation is discussed.

  18. APC-PC Combined Scheme in Gilbert Two State Model: Proposal and Study

    Science.gov (United States)

    Bulo, Yaka; Saring, Yang; Bhunia, Chandan Tilak

    2017-04-01

    In an automatic repeat request (ARQ) scheme, a packet is retransmitted if it gets corrupted due to transmission errors caused by the channel. However, an erroneous packet may contain both erroneous bits and correct bits and hence it may still contain useful information. The receiver may be able to combine this information from multiple erroneous copies to recover the correct packet. Packet combining (PC) is a simple and elegant scheme of error correction in transmitted packet, in which two received copies are XORed to obtain the bit location of erroneous bits. Thereafter, the packet is corrected by bit inversion of bit located as erroneous. Aggressive packet combining (APC) is a logic extension of PC primarily designed for wireless communication with objective of correcting error with low latency. PC offers higher throughput than APC, but PC does not correct double bit errors if occur in same bit location of erroneous copies of the packet. A hybrid technique is proposed to utilize the advantages of both APC and PC while attempting to remove the limitation of both. In the proposed technique, applications of APC-PC on Gilbert two state model has been studied. The simulation results show that the proposed technique offers better throughput than the conventional APC and lesser packet error rate than PC scheme.

  19. Spin pumping in ion-beam sputtered C o2FeAl /Mo bilayers: Interfacial Gilbert damping

    Science.gov (United States)

    Husain, Sajid; Kumar, Ankit; Barwal, Vineet; Behera, Nilamani; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

    2018-02-01

    The spin-pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered C o2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin-current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data have been analyzed using spin-pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the real spin-mixing conductance and the spin-diffusion length, which are estimated to be 1.56 (±0.30 ) ×1019m-2 and 2.61 (±0.15 )nm , respectively. The damping constant is found to be 8.8 (±0.2 ) ×10-3 in the Mo(3.5 nm)-capped CFA(8 nm) sample corresponding to an ˜69 % enhancement of the original Gilbert damping 5.2 (±0.6 ) ×10-3 in the Al-capped CFA thin film. This is further confirmed by inserting the Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness-dependent net spin-current density is found to lie in the range of 1 -4 MA m-2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin-film system.

  20. Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    International Nuclear Information System (INIS)

    Alexeev, A. N.; Krasovitsky, D. M.; Petrov, S. I.; Chaly, V. P.; Mamaev, V. V.; Sidorov, V. G.

    2015-01-01

    The specific features of how nitride HEMT heterostructures are produced by NH 3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10 8 −1 × 10 9 cm −2 . The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH 3 -MBE with an extremely high ammonia flux are demonstrated

  1. Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si

    Science.gov (United States)

    Kumar, Sandeep; Remesh, Nayana; Dolmanan, S. B.; Tripathy, S.; Raghavan, S.; Muralidharan, R.; Nath, Digbijoy N.

    2017-11-01

    We report on the characterization of the interfaces of Al2O3/InAlN/GaN HEMT structure grown on 200 mm diameter silicon using conductance dispersion technique. Irreversible threshold voltage (VTH) shift of up to +∼2.5 V was observed due to the gate stress induced activation of acceptor states. Further, frequency dependent VTH shift during capacitance voltage measurements were also recorded due to the presence of slow traps at InAlN/GaN interface. The conductance dispersion indicated the presence of acceptor traps of the order of ∼4 × 1012 to 7 × 1013 cm-2 eV-1 with a time constant of ∼10 to 350 μs at the InAlN/GaN interface. Trap density at the Al2O3/InAlN was found to be in similar range but with a time constant of ∼2 μs. The presence of high density of traps at InAlN/GaN interface is attributed to the unavoidable growth interruption before the start of InAlN growth.

  2. Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yao; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Xue Jun-Shuai; Ma Xiao-Hua; Wang Chong; Yang Lin-An; Zhang Jin-Feng; Kuang Xian-Wei; Yang Cui

    2011-01-01

    We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al 2 O 3 /AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al 2 O 3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al 2 O 3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies. (rapid communication)

  3. Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.

    Science.gov (United States)

    Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

    2016-02-23

    We report improved sensitivity to NO, NO₂ and NH₃ gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO₂ and 15 ppm-NH₃ is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

  4. Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

    International Nuclear Information System (INIS)

    Zhao Sheng-Lei; Mi Min-Han; Luo Jun; Wang Yi; Dai Yang; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Hou Bin

    2014-01-01

    In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from −5 V to −49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Chen Wanjun; Zhang Jing; Zhang Bo; Chen, Kevin Jing

    2013-01-01

    The gate forward leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the AlGaN layer which results in a higher metal—semiconductor barrier. Consequently, the gate forward leakage current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied. (semiconductor devices)

  6. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  7. A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs

    Science.gov (United States)

    2015-07-01

    A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs Andong Huang1, 2, ZhengZhong2, 3, and Yongxin Guo2, 3...Suzhou Research Institute, Suzhou, China Abstract — A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is...parameter error function. The extrinsic elements are optimized at multi-bias points and the intrinsic ones at specific bias points. Only broad ranges

  8. Suppression of the self-heating effect in GaN HEMT by few-layer graphene heat spreading elements

    Science.gov (United States)

    Volcheck, V. S.; Stempitsky, V. R.

    2017-11-01

    Self-heating has an adverse effect on characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs). Various solutions to the problem have been proposed, however, a temperature rise due to dissipated electrical power still hinders the production of high power and high speed GaN devices. In this paper, thermal management of GaN HEMT via few-layer graphene (FLG) heat spreading elements is investigated. It is shown that integration of the FLG elements on top of the device structure considerably reduces the maximum temperature and improves the DC and small signal AC performance.

  9. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

    OpenAIRE

    Kühn, J.

    2011-01-01

    This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

  10. High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing

    International Nuclear Information System (INIS)

    Wang Dongfang; Wei Ke; Yuan Tingting; Liu Xinyu

    2010-01-01

    This paper describes the performance of AlGaN/GaN HEMTs with 2.4 μm source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

  11. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

    Science.gov (United States)

    Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

    2005-02-01

    A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

  12. Compact modelling of InAlN/GaN HEMT for low noise applications

    International Nuclear Information System (INIS)

    Sakalas, P; Šimukovič, A; Matulionis, A; Piotrowicz, S; Jardel, O; Delage, S L; Mukherjee, A

    2014-01-01

    This paper presents results of high-frequency noise modelling of InAlN/GaN high electron mobility transistors (HEMTs) with different formulations of the minimum noise figure NF min . Current–voltage characteristics and s-parameters of 0.15 μm gate length and 2 × 75 μm gate width InAlN/GaN HEMTs were measured at room temperature in a wide frequency range (300 MHz to 50 GHz) and bias range (V GS from −4.8 to 1 V and V DS from 0 to 21 V). Both the EEHEMT1 and Angelov GaN compact models yielded excellent agreement for transfer and output characteristics, transconductance g m , and f T , f max. High-frequency noise parameters NF min , R n , Γ OPT of InAlN/GaN HEMT were measured in 8–50 GHz frequency band. Noise formulation within the EEHEMT1 model underestimates the measured NF min and R n . The well known three-parameter PRC noise model is in a better agreement with the measured data but neglects the shot noise resulting from the gate leakage. The inductive degenerated source matching method and EEHEMT1 were used to design a single stage LNA operated at 8 GHz frequency. A 10 dB gain with an input reflection of −12 dB with a 2.5 dB of noise factor were obtained at 8 GHz. (paper)

  13. Gilbert Simondon’s ‘Transduction’ as Radical Immanence in Performance

    Directory of Open Access Journals (Sweden)

    Paulo de Assis

    2017-12-01

    Full Text Available Transduction is Gilbert Simondon’s key concept for understanding processes of differentiation and of individuation in a number of fields, including scientific disciplines, social and human sciences, technological devices, and artistic domains. Originating from the sciences and crucially developed in its philosophical implications by Simondon, transduction refers to a dynamic operation by which energy is actualized, moving from one state to the next, in a process that individuates new materialities. This chapter appropriates this concept for musical practice, aiming at establishing a foundational conceptual layer for a broader research effort that crucially includes artistic practice—both composition and performance—as its starting and end points. After an introductory depiction of what transduction might mean for a music performer, this paper focuses on the presentation of different definitions of transduction, mainly stemming from Simondon himself, but including two further extensions: one to Deleuze’s concept of haecceity (and via Deleuze, to my own micro-haecceity, the other to Brian Massumi’s notion of corporeality. Keeping in mind the potential of these definitions for the making of music, this essay explores eight different, yet complementary ways of thinking transduction, which are presented in a growing scale of complexity from the incandescent light bulb (3.1. to the intricacies of decision-making in living organisms (3.8., passing by the question of time and temporality (3.2., thermodynamics (3.3., information theory (3.4., a redesigned theory of haecceities (3.5., Riemannian topology (3.6., and corporeality (3.7.. All these topics are presented here in short, as opening gates to wider fields of inquiry, suggesting future avenues of research, rather than claiming to offer finished thought.

  14. The damping of spin motions in ultrathin films: Is the Landau-Lifschitz-Gilbert phenomenology applicable?

    International Nuclear Information System (INIS)

    Mills, D.L.; Arias, Rodrigo

    2006-01-01

    The Landau-Lifschitz-Gilbert (LLG) equation is used widely in device design to describe spin motions in magnetic nanoscale structures. The damping term in this equation plays an essential role in the description of the magnetization dynamics. The form of this term is simple and appealing, but it is derived through use of elementary phenomenological considerations. An important question is whether or not it provides a proper description of the damping of the magnetization in real materials. Recently, it was predicted that a mechanism called two magnon damping should contribute importantly to linewidths and consequently spin damping in ultrathin ferromagnetic films. This process yields ferromagnetic resonance (FMR) linewidths whose frequency dependence is incompatible with the linear variation expected from the Landau-Lifschitz equation. This prediction has now been confirmed experimentally. Furthermore, subsequent experimental and theoretical studies have demonstrated that the damping rate depends strongly on wave vector as well. It is thus clear that for many samples, the LLG equation fails to account for the systematics of the damping of the magnetization in ultrathin ferromagnets, at the linear response level. The paper will review the recent literature on this topic relevant to this issue. One must then inquire into the nature of a proper phenomenology to describe these materials. At the linear response level, the theory of the two magnon mechanism is sufficiently complete that one can describe the response of these systems without resort to LLG phenomenology. However, currently there is very great interest in the large amplitude response of the magnetization in magnetic nanostructures. In the view of the authors, it is difficult to envision a generally applicable extension of linear response theory into the large amplitude regime

  15. Genetic susceptibility to Gilbert's syndrome in a valencian population; efficacy of the fasting test.

    Science.gov (United States)

    Torres, A K; Escartín, N; Monzó, C; Guzmán, C; Ferrer, I; González-Muñoz, C; Peña, P; Monzó, V; Marcaida, G; Rodríguez-López, R

    To describe the populational distribution of the UGT1A1*28 variant (genetic variant code rs8175347) located in the promotor of the UGT gene and correlate its genotypes with the results of the fasting test, as well as its relationship with the biochemical disorder of Gilbert's syndrome (GS) in a Valencian population. We studied the prevalence of the genotypes (TA) 6/6 (TA) 6/7 and (TA) 7/7 of the deleterious variant rs8175347 in 144 patients with hyperbilirubinemia, 38 of whom had previously undergone the fasting test to diagnose GS, and in 150 control patients. By analysing the genomic region of the TATA box of the UGT1A1 gene promotor using Sanger sequencing, we established the correlation between the rs8175347 genotypes and the fasting test results and with the patients' biochemical disorders. The rate of heterozygosity of allele (TA) 7 in the control population was 32% and increased to 87.59% among the patients with suspected GS. The rate of genotype TA 7/7 was 81.94% among the patients with hyperbilirubinemia, compared with 11.33% in the control patients. The fasting test showed a 15.79% rate of false negatives and a 5.26% rate of false positives. The high frequency of allele (TA) 7 among the Valencian control population, almost double the 5% reported for European control patients, confirms the high rate of GS reported in the Spanish population, without observing significant differences between the geographical ends of the country. The efficacy and reliability of the fasting test for the diagnosis of GS is questionable. Copyright © 2016 Elsevier España, S.L.U. and Sociedad Española de Medicina Interna (SEMI). All rights reserved.

  16. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Boardman, D

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  17. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    International Nuclear Information System (INIS)

    Boardman, D.

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  18. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.; Veksler, Dmitry B.; Salama, Khaled N.; Zhang, Xi-C.; Shur, Michael S.

    2012-01-01

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  19. Reliability improvement in GaN HEMT power device using a field plate approach

    Science.gov (United States)

    Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung

    2017-07-01

    This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.

  20. AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

    Directory of Open Access Journals (Sweden)

    S. Taking

    2011-01-01

    Full Text Available Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1 Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2 mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

  1. Enhanced terahertz detection using multiple GaAs HEMTs connected in series

    KAUST Repository

    Elkhatib, Tamer A.

    2012-07-28

    We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

  2. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    Science.gov (United States)

    Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2016-12-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

  3. New GaN based HEMT with Si3N4 or un-doped region in the barrier for high power applications

    Science.gov (United States)

    Razavi, S. M.; Tahmasb Pour, S.; Najari, P.

    2018-06-01

    New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT) and lower region is AlGaN with heavier doping compared to barrier layer. Upper region in SI-HEMT and UN-HEMT reduces peak electric field in the channel and then improves breakdown voltage considerably. Lower region increases electron density in the two dimensional electron gas (2-DEG) and enhances drain current significantly. For instance, saturated drain current in SI-HEMT is about 100% larger than that in the conventional one. Moreover, the maximum breakdown voltage in the proposed structures is 65 V. This value is about 30% larger than that in the conventional transistor (50 V). Also, suggested structure reduces short channel effect such as DIBL. The maximum gm is obtained in UN-HEMT and conventional devices. Proposed structures improve breakdown voltage and saturated drain current and then enhance maximum output power density. Maximum output power density in the new structures is about 150% higher than that in the conventional.

  4. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    International Nuclear Information System (INIS)

    Mao Wei; Fan Ju-Sheng; Du Ming; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2016-01-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. (paper)

  5. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.

    Science.gov (United States)

    Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

    2017-12-01

    We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages (V th ) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

  6. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

    Science.gov (United States)

    Chien, Cheng-Yen; Wu, Wen-Hsin; You, Yao-Hong; Lin, Jun-Huei; Lee, Chia-Yu; Hsu, Wen-Ching; Kuan, Chieh-Hsiung; Lin, Ray-Ming

    2017-06-01

    We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having widths of up to 300 nm, based on an enhanced surface pinning effect. E-mode GaN HEMTs having MMC structures and widths as well as via-hole-lengths of 100 nm/2 μm and 300 nm/6 μm, respectively, exhibited positive threshold voltages ( V th) of 0.79 and 0.46 V, respectively. The on-resistances of the MMC and via-hole-length structures were lower than those of typical tri-gate nanoribbon GaN HEMTs. In addition, the devices not only achieved the E-mode but also improved the power performance of the GaN HEMTs and effectively mitigated the device thermal effect. We controlled the via-hole-length sidewall surface pinning effect to obtain the E-mode GaN HEMTs. Our findings suggest that via-hole-length normally off GaN HEMTs have great potential for use in next-generation power electronics.

  7. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  8. Combined effect of regulatory polymorphisms on transcription of UGT1A1 as a cause of Gilbert syndrome

    Directory of Open Access Journals (Sweden)

    Sato Hiroshi

    2010-06-01

    Full Text Available Abstract Background Gilbert syndrome is caused by defects in bilirubin UDP-glucuronosyltransferase (UGT1A1. The most common variation believed to be involved is A(TA7TAA. Although several polymorphisms have been found to link with A(TA7TAA, the combined effect of regulatory polymorphisms in the development of Gilbert syndrome remains unclear. Methods In an analysis of 15 patients and 60 normal subjects, we detected 14 polymorphisms and nine haplotypes in the regulatory region. We classified the 4-kbp regulatory region of the patients into: the TATA box including A(TA7TAA; a phenobarbital responsive enhancer module including c.-3275T>G; and a region including other ten linked polymorphisms. The effect on transcription of these polymorphisms was studied. Results All haplotypes with A(TA7TAA had c.-3275T>G and additional polymorphisms. In an in-vitro expression study of the 4-kbp regulatory region, A(TA7TAA alone did not significantly reduce transcription. In contrast, c.-3275T>G reduced transcription to 69% of that of wild type, and the linked polymorphisms reduced transcription to 88% of wild type. Transcription of the typical regulatory region of the patients was 56% of wild type. Co-expression of constitutive androstane receptor (CAR increased the transcription of wild type by a factor of 4.3. Each polymorphism by itself did not reduce transcription to the level of the patients, however, even in the presence of CAR. Conclusions These results imply that co-operation of A(TA7TAA, c.-3275T>G and the linked polymorphisms is necessary in causing Gilbert syndrome.

  9. Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

    Science.gov (United States)

    Saravana Kumar, R.; Mohanbabu, A.; Mohankumar, N.; Godwin Raj, D.

    2018-03-01

    The paper reports on the influence of a barrier thickness and gate length on the various device parameters of double gate high electron mobility transistors (DG-HEMTs). The DC and RF performance of the device have been studied by varying the barrier thickness from 1 to 5 nm and gate length from 10 to 150 nm, respectively. As the gate length is reduced below 50 nm regime, the barrier thickness plays an important role in device performance. Scaling the gate length leads to higher transconductance and high frequency operations with the expense of poor short channel effects. The authors claim that the 30-nm gate length, mole fractions tuned In0.53Ga0.47As/In0.7Ga0.3As/In0.53Ga0.47As subchannel DG-HEMT with optimised device structure of 2 nm In0.48Al0.52As barrier layer show a peak gm of 3.09 mS/µm, VT of 0.29 V, ION/IOFF ratio of 2.24 × 105, subthreshold slope 73 mV/decade and drain induced barrier lowering 68 mV/V with fT and fmax of 776 and 905 GHz at Vds = 0.5 V is achieved. These superior performances are achieved by using double-gate architecture with reduced gate to channel distance.

  10. Analysis of the thermal behavior of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Russo, Salvatore; D’Alessandro, Vincenzo; Costagliola, Maurizio; Sasso, Grazia; Rinaldi, Niccolò

    2012-01-01

    Highlights: ► The thermal behavior of advanced multifinger AlGaN/GaN HEMTs grown on SiC is analyzed. ► The study is performed through accurate FEM simulations and DC/dynamic measurements. ► The FEM analysis is supported by an in-house tool devised for a smart mesh generation. ► Illustrative technology/layout guidelines to minimize the thermal issues are provided. - Abstract: The thermal behavior of state-of-the-art multifinger AlGaN/GaN HEMTs grown on SiC is thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM simulations – based on a novel in-house tool devised to automatically build the device mesh – are performed using a commercial software to explore the influence of various layout and technological solutions on the temperature field. An in-house routine is employed to determine the Foster/Cauer networks suited to describe the dynamic heat propagation through the device structure. To conclude, various experimental techniques are employed to assess the thermal resistance and to allow the monitoring of the thermal impedance versus time of the transistors under test.

  11. Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

    International Nuclear Information System (INIS)

    Chou, Po-Chien; Cheng, Stone

    2015-01-01

    Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit

  12. Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Po-Chien; Cheng, Stone, E-mail: stonecheng@mail.nctu.edu.tw

    2015-08-15

    Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

  13. Extended behavioural modelling of FET and lattice-mismatched HEMT devices

    Science.gov (United States)

    Khawam, Yahya; Albasha, Lutfi

    2017-07-01

    This study presents an improved large signal model that can be used for high electron mobility transistors (HEMTs) and field effect transistors using measurement-based behavioural modelling techniques. The steps for accurate large and small signal modelling for transistor are also discussed. The proposed DC model is based on the Fager model since it compensates between the number of model's parameters and accuracy. The objective is to increase the accuracy of the drain-source current model with respect to any change in gate or drain voltages. Also, the objective is to extend the improved DC model to account for soft breakdown and kink effect found in some variants of HEMT devices. A hybrid Newton's-Genetic algorithm is used in order to determine the unknown parameters in the developed model. In addition to accurate modelling of a transistor's DC characteristics, the complete large signal model is modelled using multi-bias s-parameter measurements. The way that the complete model is performed is by using a hybrid multi-objective optimisation technique (Non-dominated Sorting Genetic Algorithm II) and local minimum search (multivariable Newton's method) for parasitic elements extraction. Finally, the results of DC modelling and multi-bias s-parameters modelling are presented, and three-device modelling recommendations are discussed.

  14. Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

  15. Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

    NARCIS (Netherlands)

    Kraemer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M.; Suijker, E.M.; Hek, A.P. de; Karouta, F.; Kaufmann, L.M.F.; Hoskens, R.C.P.

    2004-01-01

    We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma

  16. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d...

  17. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    International Nuclear Information System (INIS)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

  18. Field plated 0.15 μm GaN HEMTs for millimeter-wave application

    International Nuclear Information System (INIS)

    Ren Chunjiang; Li Zhonghui; Yu Xuming; Wang Quanhui; Wang Wen; Chen Tangsheng; Zhang Bin

    2013-01-01

    SiN dielectrically-defined 0.15 μm field plated GaN HEMTs for millimeter-wave application have been presented. The AlGaN/GaN hetero-structure epitaxial material for HEMTs fabrication was grown on a 3-inch SiC substrate with an Fe doped GaN buffer layer by metal-organic chemical deposition. Electron beam lithography was used to define both the gate footprint and the cap of the gate with an integrated field plate. Gate recessing was performed to control the threshold voltage of the devices. The fabricated GaN HEMTs exhibited a unit current gain cut-off frequency of 39 GHz and a maximum frequency of oscillation of 63 GHz. Load-pull measurements carried out at 35 GHz showed a power density of 4 W/mm with associated power gain and power added efficiency of 5.3 dB and 35%, respectively, for a 0.15 mm gate width device operated at a 24 V drain bias. The developed 0.15 μm gate length GaN HEMT technology is suitable for Ka band applications and is ready for millimeter-wave power MMICs development. (semiconductor devices)

  19. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  20. Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

    Science.gov (United States)

    Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

    2016-12-01

    This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

  1. Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications

    Science.gov (United States)

    Lee, Jong-Min; Ahn, Ho-Kyun; Jung, Hyun-Wook; Shin, Min Jeong; Lim, Jong-Won

    2017-09-01

    In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of application for millimeter wave applications, we focused on the high frequency performance and power characteristics. To shift the threshold voltage of HEMTs we applied the Al2O3 insulator to the gate structure and adopted the gate recess technique. To increase the frequency performance the e-beam lithography technique was used to define the 0.15 um gate length. To evaluate the dc and high frequency performance, electrical characterization was performed. The threshold voltage was measured to be positive value by linear extrapolation from the transfer curve. The device leakage current is comparable to that of the depletion mode device. The current gain cut-off frequency and the maximum oscillation frequency of the E-mode device with a total gate width of 150 um were 55 GHz and 168 GHz, respectively. To confirm the power performance for mm-wave applications the load-pull test was performed. The measured power density of 2.32 W/mm was achieved at frequencies of 28 and 30 GHz.

  2. Parasitic castration, growth, and sex steroids in the freshwater bonefish Cyphocharax gilbert (Curimatidae infested by Riggia paranensis (Cymothoidea

    Directory of Open Access Journals (Sweden)

    Neuza R. W. Lima

    Full Text Available Cyphocharax gilbert shows parasitic castration when infested by the crustacean Riggia paranensis, being unable to reproduce. Fish were sampled in the middle rio Itabapoana, Brazil, to study the prevalence of parasitism, growth, and sex steroid concentrations, considering the body size, sex, and reproductive condition of specimens. Most of the fish analyzed were infested (56.0%. The presence of two lines on the scales was more frequent among infested fish (22.0% than among fish without parasites (12.0% for females and 10.0% for males. The occurrence of three lines on the scales was rare (3.5% among infested and 2.0% among females without parasites. These results suggest that growth of the host is faster than that of non infested fish. The serum concentrations of sex steroids from fish without parasites varied at different gonadal development stages (17 beta-estradiol: 60.0 to 976.7 pg/ml; total testosterone: 220.0 to 3,887.7 pg/ml. All infested fish had lower levels of the two sex steroids and undeveloped gonads. Sex steroids levels in infested females were close to those in females at post-spawning stages. Total testosterone concentrations of infested males were below those of males at early gonadal maturation stage. These results suggest that R. paranensis reduces the reproductive capacity of C. gilbert by affecting the host endocrine system.

  3. Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for high-power applications

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.; Valinataj, Mojtaba

    2017-12-01

    In this paper, a AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) to reduce the electric field is suggested. The main idea of this work is to improve the Direct Current (DC) and Radio Frequency (RF) properties of device by modifying the depletion region in the channel. The proposed structure consists of a floating metal like a comb with triple tooth which is located in the space between the gate and drain and inside the buffer layer. We called the proposed structure as triple tooth HEMT (TT-HEMT). The RF and DC characteristics of the proposed structure are studied using numerical simulations. The breakdown voltage ( V BR ) increases to 169.5 V for the proposed structure in comparison with 103 V for the conventional HEMT (C-HEMT) due to the modified electric field distribution in the channel of the TT-HEMT structure. The maximum output power density ( P max ) of the TT-HEMT structure is 60.4% greater than that of the C-HEMT. The optimized results show that the maximum oscillation frequency ( f max ) and cut-off frequency (fT) of the proposed structure improve 111% and 26.5%, respectively compared to the C-HEMT structure. In addition, the maximum available gain (MAG) of the TT-HEMT structure is obtained 8.5 dB higher than that of the C-HEMT structure at the frequency of 40 GHz. The optimal results show that whatever the number of teeth on metal increases, the depletion region in the channel is modified more and the breakdown voltage increases, as well. Besides, the output power density ( P max ) is improved with the increasing number of teeth on metal (N). This characteristic is also true, for the cut-off frequency ( f T ), the maximum oscillation frequency ( f max ) and the maximum available gain (MAG) of the proposed structure. However, the drain current ( I D ) of the proposed structure is reduced.

  4. Metafísica de la violencia y de la paz. Análisis agustiniano de una definición de Paul Gilbert

    OpenAIRE

    Rosales Meana, Diego I.

    2017-01-01

    Resumen: En este trabajo me aproximo al problema de la violencia política y de la paz desde un paradigma metafísico. Para ello, seguiré una estrategia argumentativa basada en los postulados agustinianos sobre los que descansa la definición de "violencia" que da el filósofo francés Paul Gilbert en su libro La paciencia de ser. La definición de Gilbert se pondrá a prueba en tres pasos. En primer lugar, exploraré lo que implica hablar de la violencia desde la metafísica concebida ésta como una "...

  5. Preface to anthropogenic fluvial sedimentation: Centennial celebration of G.K. Gilbert's Hydraulic-Mining Débris in the Sierra Nevada

    Science.gov (United States)

    James, L. Allan; Phillips, Jonathan D.; Lecce, Scott A.

    2017-10-01

    This special issue celebrates the centennial of the publication of G.K. Gilbert's (1917) monograph, Hydraulic-Mining Débris in the Sierra Nevada, U.S. Geological Survey Professional Paper 105 (PP105). Reasons to celebrate PP105 are manifold. It was the last of four classic monographs that Gilbert wrote in a career that spanned five decades. The monograph, PP105, introduced several important concepts and provided an integrated view of watersheds that was uncommon in its day. It also provided an extreme, lucid example of anthropogenic changes and legacy sediment and how to approach such large-scale phenomena from an objective, quantitative basis.

  6. Electrothermal DC characterization of GaN on Si MOS-HEMTs

    Science.gov (United States)

    Rodríguez, R.; González, B.; García, J.; Núñez, A.

    2017-11-01

    DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.

  7. X-band 5-bit MMIC phase shifter with GaN HEMT technology

    Science.gov (United States)

    Sun, Pengpeng; Liu, Hui; Zhang, Zongjing; Geng, Miao; Zhang, Rong; Luo, Weijun

    2017-10-01

    The design approach and performance of a 5-bit digital phase shifter implemented with 0.25 μm GaN HEMT technology for X-band phased arrays are described. The switched filter and high-pass/low-pass networks are proposed in this article. For all 32 states of the 5-bit phase shifter, the RMS phase error less than 5.5°, RMS amplitude error less than 0.8 dB, insertion loss less than 12 dB and input/output return loss less than 8.5 dB are obtained overall 8-12 GHz. The continuous wave power capability is also measured, and a typical input RF P1dB data of 32 dBm is achieved at 8 GHz.

  8. Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

    Directory of Open Access Journals (Sweden)

    Ronald A. Coutu

    2016-06-01

    Full Text Available The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN high electron mobility transistors (HEMT lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation is insufficient to assess lifetime at operating conditions.

  9. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

    International Nuclear Information System (INIS)

    Rodilla, H; González, T; Mateos, J; Moschetti, G; Grahn, J

    2011-01-01

    In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, n s , have been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cutoff frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of n s shifts the maximum of the transconductance and intrinsic cutoff frequency to higher values of drain current and improves the agreement with the experimental results

  10. Review: Devan Pillay, Gilbert M. Khadiagala, Prishani Naidoo and Roger Southall (eds, New South African Review 4: A Fragile Democracy – Twenty Years On (2014

    Directory of Open Access Journals (Sweden)

    Ian Taylor

    2015-01-01

    Full Text Available Review of the edited volume:Devan Pillay, Gilbert M. Khadiagala, Prishani Naidoo and Roger Southall (eds, New South African Review 4: A Fragile Democracy – Twenty Years On, Johannesburg: Wits University Press, 2014, ISBN 9781868147632, 380 pp.

  11. AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

    International Nuclear Information System (INIS)

    Leclaire, P; Chenot, S; Cordier, Y; Buchaillot, L; Théron, D; Faucher, M

    2014-01-01

    In the present work, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown with very thin buffer layers on silicon substrates in view of developing nano electromechanical systems (NEMS) for sensors applications. To ensure transducer operation in the MHz range together with low mechanical stiffness, epitaxial structures with thickness below 1 μm have to be developed. We report on the evolution of the material and electrical properties of AlGaN/GaN HEMTs with thicknesses varying from 2 μm to 0.5 μm. The set of parameters obtained includes in-plane Young modulus of 250 GPa in association with carrier density of 6 × 10 12 cm −2 and mobility above 1000 cm 2  V −1  s −1 . The resulting behavior of demonstration transistors validates these epilayers for electromechanical resonators operation. (paper)

  12. Temperature dependent DC characterization of InAlN/(AlN)/GaN HEMT for improved reliability

    Science.gov (United States)

    Takhar, K.; Gomes, U. P.; Ranjan, K.; Rathi, S.; Biswas, D.

    2015-02-01

    InxAl1-xN/AlN/GaN HEMT device performance is analysed at various temperatures with the help of physics based 2-D simulation using commercially available BLAZE and GIGA modules from SILVACO. Various material parameters viz. band-gap, low field mobility, density of states, velocity saturation, and substrate thermal conductivity are considered as critical parameters for predicting temperature effect in InxAl1-xN/AlN/GaN HEMT. Reduction in drain current and transconductance has been observed due to the decrease of 2-DEG mobility and effective electron velocity with the increase in temperature. Degradation in cut-off frequency follows the transconductance profile as variation in gate-source/gate-drain capacitances observed very small.

  13. A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology

    Directory of Open Access Journals (Sweden)

    Dong-Hwan Shin

    2017-10-01

    Full Text Available This study presents a 2–20 GHz monolithic distributed power amplifier (DPA using a 0.25 μm AlGaN/GaN on SiC high electron mobility transistor (HEMT technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a nonuniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC are 35.3–38.6 dBm and 11.4%–31%, respectively, for 2–20 GHz.

  14. Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content

    Science.gov (United States)

    Yuzeeva, N. A.; Sorokoumova, A. V.; Lunin, R. A.; Oveshnikov, L. N.; Galiev, G. B.; Klimov, E. A.; Lavruchin, D. V.; Kulbachinskii, V. A.

    2016-12-01

    InxGa_{1-{x}}As/InyAl_{1-{y}}As HEMT structures {δ}-doped by Si were grown by molecular beam epitaxy on InP substrate. We investigated the influence of the In content on the electron mobilities and effective masses in dimensionally quantized subbands. The electron effective masses were determined by the temperature dependence of the amplitude of the Shubnikov-de Haas effect at 1.6 and 4.2 K. We found that the more the In content in quantum well (QW), the less the electron effective masses. The mobilities are higher in HEMT structures with wider and deeper QW. The energy band diagrams were calculated by using Vegard's law for basic parameters. The calculated band diagrams are in a good agreement with the experimental data of photoluminescence spectra.

  15. A nonlinear model for frequency dispersion and DC intrinsic parameter extraction for GaN-based HEMT

    Science.gov (United States)

    Nguyen, Tung The-Lam; Kim, Sam-Dong

    2017-11-01

    We propose in this study a practical nonlinear model for the AlGaN/GaN high electron mobility transistors (HEMTs) to extract DC intrinsic transconductance (gmDC), output conductance (gdsDC), and electron mobility from the intrinsic parameter set measured at high frequencies. An excellent agreement in I-V characteristics of the model with a fitting error of 0.11% enables us successfully extract the gmDC, gdsDC, and the total transconductance dispersion. For this model, we also present a reliable analysis scheme wherein the frequency dispersion effect due regional surface states in AlGaN/GaN HEMTs is taken into account under various bias conditions.

  16. Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

    2014-08-15

    The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

  17. Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

    Science.gov (United States)

    Kumar, Sona P.; Agrawal, Anju; Chaujar, Rishu; Gupta, Mridula; Gupta, R. S.

    2008-07-01

    A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain biases. It is seen that the SCEs and hot carrier effects in DMG AlGaN/GaN HEMT are suppressed due to the work function difference of the two metal gates, thereby screening the drain potential variations by the gate near the drain. Besides, a more uniform electric field along the channel leads to improved carrier transport efficiency. The accuracy of the results obtained from our analytical model has been verified using ATLAS device simulations.

  18. An analytical turn-on power loss model for 650-V GaN eHEMTs

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Shen, Zhan

    2018-01-01

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-d......-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.......This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time...

  19. ELEMENTOS SOBRE LA HISTORIA DEL CONCEPTO DE DESARROLLO SEGÚN LOS ECONOMISTAS THEOTONIO DOS SANTOS Y GILBERT RIST

    Directory of Open Access Journals (Sweden)

    Francisco Javier Criollo

    2009-01-01

    Full Text Available El artículo tiene como propósito presentar la percepción y las inquietudes que dos importantes pensadores económicos ofrecen a través de sus obras sobre dependencia económica y desarrollo, como punto de partida en la reflexión que se ha iniciado sobre algunos conceptos que se convierten en clave para una discusión o debate. El estudio de una de las obras de Theotonio Dos Santos y otra de Gilbert Rist sobre la temática mencionada, le deja al grupo de investigación importantes inquietudes para la construcción de un pensamiento propio y alternativo.

  20. Spectral Resolution for Five-Element, Filtered, X-Ray Detector (XRD) Arrays Using the Methods of Backus and Gilbert

    International Nuclear Information System (INIS)

    FEHL, DAVID LEE; BIGGS, F.; CHANDLER, GORDON A.; STYGAR, WILLIAM A.

    2000-01-01

    The generalized method of Backus and Gilbert (BG) is described and applied to the inverse problem of obtaining spectra from a 5-channel, filtered array of x-ray detectors (XRD's). This diagnostic is routinely fielded on the Z facility at Sandia National Laboratories to study soft x-ray photons ((le)2300 eV), emitted by high density Z-pinch plasmas. The BG method defines spectral resolution limits on the system of response functions that are in good agreement with the unfold method currently in use. The resolution so defined is independent of the source spectrum. For noise-free, simulated data the BG approximating function is also in reasonable agreement with the source spectrum (150 eV black-body) and the unfold. This function may be used as an initial trial function for iterative methods or a regularization model

  1. Design and Characterization of a 6 W GaN HEMT Microwave Power Amplifier with Digital Predistortion Linearization

    OpenAIRE

    Mitrevski, Dragan

    2011-01-01

    In this thesis, characterization of a 6W GaN HEMT power amplifier for optimal operating conditions through load pull simulations and measurements is investigated.The purpose is to find source and load impedances to achieve for instance maximum efficiency and maximum output power, and investigate whether thesimulated results can be replicated in a measurement setup. Simulations show that when matching for maximum output power, a peak output power of 13W is achieved, while in 1 dB compression, ...

  2. Gate less-FET pH Sensor Fabricated on Undoped AlGaN/ GaN HEMT Structure

    International Nuclear Information System (INIS)

    Maneea Eizadi Sharifabad; Mastura Shafinaz Zainal Abidin; Shaharin Fadzli Abd Rahman; Abdul Manaf Hashim; Abdul Rahim Abdul Rahman

    2011-01-01

    Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristics of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/ GaN high-electron-mobility-transistor (HEMT) structure in aqueous solution was investigated. In ambient atmosphere, the open-gate undoped AlGaN/ GaN HEMT clearly showed only the presence of linear region of currents while Si-doped AlGaN/ GaN showed the linear and saturation regions of currents, very similar to those of gated devices. This seems to show that very low Fermi level pinning by surface states exists in undoped AlGaN/ GaN sample. In aqueous solution, the typical current-voltage (I-V) characteristics of HEMTs with good gate controllability were observed. The potential of the AlGaN surface at the open-gate area is effectively controlled via aqueous solution by Ag/ AgCl reference gate electrode. The open-gate undoped AlGaN/ GaN HEMT structure is capable of stable operation in aqueous electrolytes and exhibit linear sensitivity, and high sensitivity of 1.9 mA/ pH or 3.88 mA/ mm/ pH at drain-source voltage, VDS = 5 V was obtained. Due to large leakage current where it increases with the negative reference gate voltage, the Nernstians like sensitivity cannot be determined. Suppression of current leakage is likely to improve the device performance. The open-gate undoped-AlGaN/ GaN structure is expected to be suitable for pH sensing application. (author)

  3. Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT

    Science.gov (United States)

    Gupta, Akriti; Chatterjee, Neel; Kumar, Pradeep; Pandey, Sujata

    2017-08-01

    In this paper, we present the effect of passivation layer on the electrical characteristics of AlGaN/GaN HEMT. The energy band diagram, drain current voltage characteristics, transconductance and cut off frequency was calculated for both long channel and short channel devices. It was found that the electrical characteristics of the device improve with the introduction of high K dielectric in the passivation layer. The results obtained agree well with the data available in literature.

  4. A Biography of Distinguished Scientist Gilbert Newton Lewis (by Edward S. Lewis)

    Science.gov (United States)

    Harris, Reviewed By Harold H.

    1999-11-01

    The Edward Mellen Press: Lewiston, NY, 1998. 114 pp + index. ISBN 0-7734-8284-9. $69.95. There may not be a surname better known to students of chemistry than Lewis, from the Lewis electron-dot diagrams and the Lewis theory of acids and bases. More advanced students may know of the groundbreaking textbook Thermodynamics, by Lewis and Randall. Yet few Americans know much about this remarkable U.S.-born scholar, whose contributions equal those of the greatest scientists. He is a chemist-educator of whom we should be as proud and as well informed as we are of Linus Pauling, who was part of the westward movement of science in this country that G. N. Lewis began, or of the recently deceased Glenn Seaborg, who was one of the many students of Lewis who achieved renown. Gilbert N. Lewis was born in Weymouth, Massachusetts, in 1875, but his family moved to near Lincoln, Nebraska, in 1884. He spent two years at the University of Nebraska, but then moved to Harvard when his father became an executive at Merchants Trust Company in Boston. Young Lewis (then only 17) was also said to have been disappointed with the quality of education in Nebraska, and this may have been part of the impetus for the family's move east. After earning his baccalaureate at Harvard, he taught for a year at Phillips Andover Academy before returning to Harvard to study for his doctorate, which he completed 100 years ago, in 1899, under T. W. Richards. Lewis's doctoral work was on the thermodynamics of zinc and cadmium amalgams. At that time, physical chemistry was only beginning to achieve recognition as a branch of science, and its boundaries were ill defined. Edward Lewis quotes his father as often saying, "Physical chemistry is anything interesting." Like many chemists of his time, Lewis went to Europe to complete his preparation for a career; he was in the laboratories of Ostwald in Leipzig and Nernst in Göttingen in 1900-1901. On his return to the United States, he was an instructor at Harvard

  5. Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

    Directory of Open Access Journals (Sweden)

    Po-Chien Chou

    2017-02-01

    Full Text Available This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS high electron mobility transistors (HEMTs. When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, which might affect the long term stability of these devices. More detailed investigations are needed to identify epitaxy- or process-related degradation mechanisms and to understand their impact on electrical properties. The present paper proposes a suitable methodology to characterize the degradation and failure mechanisms of GaN MIS-HEMTs subjected to stress under various off-state conditions. There are three major stress conditions that include: VDS = 0 V, off, and off (cascode-connection states. Changes of direct current (DC figures of merit in voltage step-stress experiments are measured, statistics are studied, and correlations are investigated. Hot electron stress produces permanent change which can be attributed to charge trapping phenomena and the generation of deep levels or interface states. The simultaneous generation of interface (and/or bulk and buffer traps can account for the observed degradation modes and mechanisms. These findings provide several critical characteristics to evaluate the electrical reliability of GaN MIS-HEMTs which are borne out by step-stress experiments.

  6. Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range

    International Nuclear Information System (INIS)

    Zhao, M.; Liu, X.Y.; Zheng, Y.K.; Li, Yankui; Ouyang, Sihua

    2013-01-01

    Highlights: ► We report the behavior of the current–voltage characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. ► The origin of the leakage current and the current transport behaviors are reported. ► There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height in homogeneities. -- Abstract: In this study, we investigate the behavior of the current–voltage (I–V) characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Φ increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (R s ) are in the range of 144.2 Ω at 223 K to 74.3 Ω at 398 K. The Φ, n, R s , G m and Schottky leakage current values are seen to be strongly temperature dependent

  7. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Li, Baikui; Tang, Xi; Chen, Kevin J.

    2015-01-01

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

  8. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-03-02

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

  9. Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

    International Nuclear Information System (INIS)

    Xie Yuanbin; Quan Si; Ma Xiaohua; Zhang Jincheng; Li Qingmin; Hao Yue

    2011-01-01

    Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate. E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7 V, a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V. The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs. (semiconductor integrated circuits)

  10. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application

    Science.gov (United States)

    Li, Zhonghui; Li, Chuanhao; Peng, Daqing; Zhang, Dongguo; Dong, Xun; Pan, Lei; Luo, Weike; Li, Liang; Yang, Qiankun

    2018-06-01

    Quaternary InAlGaN barriers with thickness of 7 nm for HEMT application were grown on 3-inch semi-insulating 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD). Focused on growth mechanism of the InAlGaN barrier, the surface morphology and characteristics of InAlGaN/AlN/GaN heterostructures were studied with different growth parameters, including the temperature, Al/Ga ratio and chamber pressure. Among the as-grown samples, high electron mobility is consistent with smooth surface morphology, while high crystalline quality of the quaternary barrier is confirmed by measurements of Photoluminescence (PL) and Mercury-probe Capacity-Voltage (C-V). The recommended heterostructures without SiN passivation is characterized by mobility of 1720 cm2/(V·s), 2DEG density of 1.71*1013 cm-2, sheet resistance of about 210 Ω/□ with a smooth surface morphology and moderate tensile state, specially applied for microwave devices.

  12. Millimeter-wave pseudomorphic HEMT MMIC phased array components for space communications

    Science.gov (United States)

    Lan, G. L.; Pao, C. K.; Wu, C. S.; Mandolia, G.; Hu, M.; Yuan, S.; Leonard, Regis

    1991-01-01

    Recent advances in pseudomorphic HEMT MMIC (PMHEMT/MMIC) technology have made it the preferred candidate for high performance millimeter-wave components for phased array applications. This paper describes the development of PMHEMT/MMIC components at Ka-band and V-band. Specifically, the following PMHEMT/MMIC components will be described: power amplifiers at Ka-band; power amplifiers at V-band; and four-bit phase shifters at V-band. For the Ka-band amplifier, 125 mW output power with 5.5 dB gain and 21 percent power added efficiency at 2 dB compression point has been achieved. For the V-band amplifier, 112 mW output power with 6 dB gain and 26 percent power added efficiency has been achieved. And, for the V-band phase shifter, four-bit (45 deg steps) phase shifters with less than 8 dB insertion loss from 61 GHz to 63 GHz will be described.

  13. Electrical properties of AlGaN/GaN HEMTs in stretchable geometries

    Science.gov (United States)

    Tompkins, R. P.; Mahaboob, I.; Shahedipour-Sandvik, F.; Lazarus, N.

    2017-10-01

    Many biological materials are naturally soft and stretchable, far more so than crystalline semiconductors. Creating systems that can be placed directly on a surface such as human skin has required new approaches in electronic device design and materials, a field known as stretchable electronics. One common method for fabricating a highly brittle semiconductor device able to survive tens of percent strain is to incorporate stress relief structures ('waves'). Although the mechanical advantages of this approach are well known, the effects on the electrical behavior of a device such as a transistor compared to a more traditional geometry have not been studied. Here, AlGaN/GaN high electron mobility transistors (HEMTs) grown on rigid sapphire substrates were fabricated in a common wavy geometry, a sinusoid, with dimensions similar to those used in stretchable electronics. The study analyzes control parameters available to the designer including gate location along the sinusoid, angle the source-drain contacts make with the gate, as well as variation of the gate length at the peak of the sinusoid. Common electrical parameters such as saturation current density, threshold voltage, and transconductance were compared between the sinusoidal and conventional straight geometries and results found to fall to within experimental uncertainty, suggesting shifting to a stretchable geometry is possible without appreciably degrading semiconductor device performance.

  14. Demonstration of an RF front-end based on GaN HEMT technology

    Science.gov (United States)

    Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver

    2017-05-01

    The effectiveness of the developed front-end on blocking the communication link of a commercial drone vehicle has been demonstrated in this work. A jamming approach has been taken in a broadband fashion by using GaN HEMT technology. Equipped with a modulated-signal generator, a broadband power amplifier, and an omni-directional antenna, the proposed system is capable of producing jamming signals in a very wide frequency range between 0.1 - 3 GHz. The maximum RF output power of the amplifier module has been software-limited to 27 dBm (500 mW), complying to the legal spectral regulations of the 2.4 GHz ISM band. In order to test the proof of concept, a real-world scenario has been prepared in which a commercially-available quadcopter UAV is flown in a controlled environment while the jammer system has been placed in a distance of about 10 m from the drone. It has been proven that the drone of interest can be neutralized as soon as it falls within the range of coverage (˜3 m) which endorses the promising potential of the broadband jamming approach.

  15. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Bougrioua, Z.; Lorenzini, P. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); Azize, M. [CRHEA-CNRS, rue Bernard Gregory, 06560 Valbonne (France); LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France); Jimenez, A. [E. Politecnica. Universidad de Alcala, 28871 Alcala de Henares (Spain); Brana, A.F.; Munoz, E. [ETSI Telecomunicacion, UPM, 28040 Madrid (Spain); Beaumont, B.; Gibart, P. [LUMILOG, 2720 Chemin St Bernard, 06220 Vallauris (France)

    2005-05-01

    Highly resistive GaN (>10{sup 8} {omega}{sub {upsilon}}) is grown by MOVPE on sapphire with dislocation density in the range 10{sup 8} to 8 x 10{sup 8} cm{sup -2}, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm{sup 2}/V/s at n{sub s}{proportional_to}7.6 x 10{sup 12} cm{sup -2}. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: I{sub DS}{sup max}=1.28 A/mm, g{sub m}{sup max} {proportional_to}290 mS/mm and f{sub T} {proportional_to}23 GHz were measured for 0.2 {mu}m transistors. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Specific features of NH{sub 3} and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Alexeev, A. N. [NTO ZAO (Russian Federation); Krasovitsky, D. M. [Svetlana-Rost ZAO (Russian Federation); Petrov, S. I., E-mail: petrov@semiteq.ru [NTO ZAO (Russian Federation); Chaly, V. P.; Mamaev, V. V. [Svetlana-Rost ZAO (Russian Federation); Sidorov, V. G. [St. Petersburg State Polytechnic University (Russian Federation)

    2015-01-15

    The specific features of how nitride HEMT heterostructures are produced by NH{sub 3} and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in these layers to values of 9 × 10{sup 8}−1 × 10{sup 9} cm{sup −2}. The use of buffer layers of this kind makes it possible to obtain high-quality GaN/AlGaN heterostructures by both methods. At the same time, in contrast to ammonia MBE which is difficult to apply at T < 500°C (because of the low efficiency of ammonia decomposition), PA MBE is rather effective at low temperatures, e.g., for the growth of InAlN layers lattice-matched with GaN. The results obtained in the MBE growth of AlN/AlGaN/GaN/InAlN heterostructures by both PA-MBE and NH{sub 3}-MBE with an extremely high ammonia flux are demonstrated.

  17. Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs

    International Nuclear Information System (INIS)

    Zhong Yinghui; Zhang Yuming; Wang Xiantai; Su Yongbo; Cao Yuxiong; Jin Zhi; Liu Xinyu

    2012-01-01

    We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz. The characteristics of HEMTs with side-etched region lengths (L side ) of 300, 412 and 1070 nm were analyzed. With the increase in L side , the kink effect became notable in the DC characteristics, which resulted from the surface state and the effect of impact ionization. The kink effect was qualitatively explained through energy band diagrams, and then eased off by reducing the L side . Meanwhile, the L side dependence of the radio frequency characteristics, which were influenced by the parasitic capacitance, as well as the parasitic resistance of the source and drain, was studied. This work will be of great importance in fabricating high-performance InP HEMTs. (semiconductor devices)

  18. I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

    Science.gov (United States)

    Lang, A. C.; Hart, J. L.; Wen, J. G.; Miller, D. J.; Meyer, D. J.; Taheri, M. L.

    2016-09-01

    Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation.

  19. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN HEMT channel

    Science.gov (United States)

    Mikhailovich, S. V.; Galiev, R. R.; Zuev, A. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Khabibullin, R. A.

    2017-08-01

    Field-effect high-electron-mobility transistors (HEMTs) based on AlGaN/AlN/GaN heterostructures with various gate lengths L g have been studied. The maximum values of current and power gaincutoff frequencies ( f T and f max, respectively) amounted to 88 and 155 GHz for HEMTs with L g = 125 nm, while those for the transistors with L g = 360 nm were 26 and 82 GHz, respectively. Based on the measured S-parameters, the values of elements in small-signal equivalent schemes of AlGaN/AlN/GaN HEMTs were extracted and the dependence of electron-injection velocity vinj on the gate-drain voltage was determined. The influence of L g and the drain-source voltage on vinj has been studied.

  20. Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

    International Nuclear Information System (INIS)

    Lenka, T. R.; Panda, A. K.

    2011-01-01

    Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

  1. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

    Science.gov (United States)

    Halfaya, Yacine; Bishop, Chris; Soltani, Ali; Sundaram, Suresh; Aubry, Vincent; Voss, Paul L.; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

    2016-01-01

    We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time. PMID:26907298

  2. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

    Directory of Open Access Journals (Sweden)

    Yacine Halfaya

    2016-02-01

    Full Text Available We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO 2 and 15 ppm-NH 3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.

  3. The role of sediment supply in large-scale stratigraphic architecture of ancient Gilbert-type deltas (Pliocene Siena-Radicofani Basin, Italy)

    Science.gov (United States)

    Martini, Ivan; Ambrosetti, Elisa; Sandrelli, Fabio

    2017-04-01

    Aggradation, progradation and retrogradation are the main patterns that define the large-scale architecture of Gilbert-type deltas. These patterns are governed by the ratio between the variation in accommodation space and sediment supply experienced during delta growth. Sediment supply variations are difficult to estimate in ancient settings; hence, it is rarely possible to assess its significance in the large-scale stratigraphic architecture of Gilbert-type deltas. This paper presents a stratigraphic analysis of a Pliocene deltaic complex composed of two coeval and narrowly spaced deltaic branches. The two branches recorded the same tectonic- and climate-induced accommodation space variations. As a result, this deltaic complex represents a natural laboratory for testing the effects of sediment supply variations on the stratigraphic architecture of Gilbert-type deltas. The field data suggest that a sediment supply which is able to counteract the accommodation generated over time promotes the aggradational/progradational attitude of Gilbert-type deltas, as well as the development of thick foreset deposits. By contrast, if the sediment supply is not sufficient for counterbalancing the generated accommodation, an aggradational/retrogradational stratigraphic architecture is promoted. In this case, the deltaic system is forced to withdraw during the different phases of generation of accommodation, with the subsequent flooding of previously deposited sub-horizontal topset deposits (i.e., the delta plain). The subsequent deltaic progradation occurs above these deposits and, consequently, the available space for foresets growth is limited to the water depth between the base-level and the older delta plain. This leads to the vertical stacking of relatively thin deltaic deposits with an overall aggradatational/retrogradational attitude.

  4. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

    Energy Technology Data Exchange (ETDEWEB)

    Tikhomirov, V. G., E-mail: VV11111@yandex.ru [Saint Petersburg Electrotechnical University “LETI” (Russian Federation); Zemlyakov, V. E.; Volkov, V. V.; Parnes, Ya. M.; Vyuginov, V. N. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Cherkashin, N. A. [CEMES-CNRS-Université de Toulouse (France); Mizerov, M. N. [Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation); Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-02-15

    The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.

  5. Metafísica de la violencia y de la paz. Análisis agustiniano de una definición de Paul Gilbert

    Directory of Open Access Journals (Sweden)

    Diego I. Rosales Meana

    2017-07-01

    Full Text Available En este trabajo intentaré trazar los lineamientos básicos de una metafísica de la violencia y de la paz en Paul Gilbert y Agustín de Hipona. Para ello, explicitaré los postulados agustinianos sobre los que descansa una definición Gilbert da de la violencia en su libro La paciencia de ser. La definición de Gilbert se pondrá a prueba en tres pasos. En primer lugar, exploraré lo que implica hablar de la violencia en metafísica concebida ésta como una «filosofía primera». En segundo lugar, recuperaré la fenomenología que Agustín de Hipona elabora principalmente en De libero arbitrio. En tercer lugar analizaré la libertad política y su sustitución a través de la noción de «legalidad». De este modo, la violencia quedará caracterizada como la renuncia a lo propiamente político, como la afirmación unilateral de la libertad individual y, por lo tanto, la negación de esa misma libertad.

  6. Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density

    Science.gov (United States)

    Li, Kexin; Rakheja, Shaloo

    2017-02-01

    In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

  7. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

    Science.gov (United States)

    Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

    2015-12-01

    The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

  8. Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

    Directory of Open Access Journals (Sweden)

    Taizoh Sadoh

    2011-03-01

    Full Text Available The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, VDS = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

  9. Open-gated pH sensor fabricated on an undoped-AlGaN/GaN HEMT structure.

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Hashim, Abdul Manaf; Sharifabad, Maneea Eizadi; Rahman, Shaharin Fadzli Abd; Sadoh, Taizoh

    2011-01-01

    The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This seems to show that very low Fermi level pinning by surface states exists in the undoped AlGaN/GaN sample. In aqueous solution, typical current-voltage (I-V) characteristics with reasonably good gate controllability are observed, showing that the potential of the AlGaN surface at the open-gated area is effectively controlled via aqueous solution by the Ag/AgCl gate electrode. The open-gated undoped AlGaN/GaN HEMT structure is capable of distinguishing pH level in aqueous electrolytes and exhibits linear sensitivity, where high sensitivity of 1.9 mA/pH or 3.88 mA/mm/pH at drain-source voltage, V(DS) = 5 V is obtained. Due to the large leakage current where it increases with the negative gate voltage, Nernstian like sensitivity cannot be determined as commonly reported in the literature. This large leakage current may be caused by the technical factors rather than any characteristics of the devices. Surprisingly, although there are some imperfections in the device preparation and measurement, the fabricated devices work very well in distinguishing the pH levels. Suppression of current leakage by improving the device preparation is likely needed to improve the device performance. The fabricated device is expected to be suitable for pH sensing applications.

  10. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

    Science.gov (United States)

    Bagnall, Kevin R; Moore, Elizabeth A; Badescu, Stefan C; Zhang, Lenan; Wang, Evelyn N

    2017-11-01

    As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E 2 (high), A 1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

  11. Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures

    Directory of Open Access Journals (Sweden)

    Deepthi Nagulapally

    2015-01-01

    Full Text Available The Inverse Piezoelectric Effect (IPE is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs. Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  12. Characterization and Modeling I(V of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN

    Directory of Open Access Journals (Sweden)

    N. Benyahya

    2014-05-01

    Full Text Available In this paper, we have studied the Schottky contact of Ni/Au/AlInN/GaN HEMTs. The current–voltage Igs (Vgs of Ni/Au/AlInN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3, barrier height (0.72 eV and series resistance (33 W were evaluated from I(V data, the threshold voltage (-2.42 V, the 2D gas density (1.35 ´ 1013 cm-2 and barrier height (0.94 eV were evaluated from C(V data.

  13. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

    Science.gov (United States)

    Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

    2017-11-01

    As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

  14. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K; Transistor balistique quantique et HEMT bas-bruit pour la cryoelectronique inferieure a 4.2 K

    Energy Technology Data Exchange (ETDEWEB)

    Gremion, E

    2008-01-15

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 {mu}W. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/{radical}(Hz) at 1 kHz and 0.12 nV/{radical}(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  15. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2017-12-01

    Full Text Available In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS, no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  16. Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT

    Science.gov (United States)

    Majumdar, Shubhankar; Das, S.; Biswas, D.

    2015-08-01

    Impact on DC characteristics of InGaN/AlGaN/GaN HEMT due to variation in the hetero-structure parameters i.e. molar fraction of Al and thickness of AlGaN barrier layer is presented in this paper. Gate controllability over the channel is dependent on barrier layer thickness, and molar fraction has an impact on band offset and 2DEG, which further affects the current. HEMT device that is simulated in SILVACO has InGaN cap layer of 2 nm thickness with 15% In molar fraction, variation of Al percentage and thickness of the AlGaN barrier layer are taken as 15-45% and 5-20nm, respectively. A tremendous change in threshold voltage (Vth), maximum transconductance (Gmmax) and subthreshold swing is found due to variation in hetero-structure parameter of barrier layer and the values are typically 1.3-0.1 V, 0.6-0.44 S/mm and 75-135 mV/dec respectively.

  17. Quantum ballistic transistor and low noise HEMT for cryo-electronics lower than 4.2 K

    International Nuclear Information System (INIS)

    Gremion, E.

    2008-01-01

    Next generations of cryo-detectors, widely used in physics of particles and physics of universe, will need in the future high-performance cryo-electronics less noisy and closer to the detector. Within this context, this work investigates properties of two dimensional electron gas GaAlAs/GaAs by studying two components, quantum point contact (QPC) and high electron mobility transistor (HEMT). Thanks to quantized conductance steps in QPC, we have realized a quantum ballistic transistor (voltage gain higher than 1), a new component useful for cryo-electronics thanks to its operating temperature and weak power consumption (about 1 nW). Moreover, the very low capacity of this component leads to promising performances for multiplexing low temperature bolometer dedicated to millimetric astronomy. The second study focused on HEMT with very high quality 2DEG. At 4.2 K, a voltage gain higher than 20 can be obtained with a very low power dissipation of less than 100 μW. Under the above experimental conditions, an equivalent input voltage noise of 1.2 nV/√(Hz) at 1 kHz and 0.12 nV/√(Hz) at 100 kHz has been reached. According to the Hooge formula, these noise performances are get by increasing gate capacity estimated to 60 pF. (author)

  18. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

    International Nuclear Information System (INIS)

    Zhang Guangchen; Feng Shiwei; Li Jingwan; Guo Chunsheng; Zhao Yan

    2012-01-01

    Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed. The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system. By using the Lorentz fitting method, the measurement uncertainty for the Raman phonon frequency of ±0.035 cm −1 is achieved, corresponding to a temperature accuracy of ±3.2 °C for GaN material, which is the highest temperature resolution in the published works. The thermal resistance of the tested AlGaN/GaN HEMT sample is 22.8 °C/W, which is in reasonably good agreement with a three dimensional heat conduction simulation. The difference among the channel temperatures obtained by micro-Raman spectroscopy, the pulsed electrical method and the infrared image method are also investigated quantificationally. (semiconductor devices)

  19. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Greenlee, Jordan D.; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D.; Specht, Petra; Dubon, Oscar D.; Luysberg, Martina; Weatherford, Todd R.

    2015-01-01

    Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10 14 H + /cm 2 , the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively

  20. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Anderson, Travis J.; Koehler, Andrew D.; Weaver, Bradley D.; Kub, Francis J.; Hobart, Karl D. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375 (United States); Specht, Petra; Dubon, Oscar D. [University of California at Berkeley, Berkeley, California 94720 (United States); Luysberg, Martina [ERC, Research Center Juelich GmbH, 52425 Juelich (Germany); Weatherford, Todd R. [Naval Postgraduate School, Monterey, California 93943 (United States)

    2015-08-24

    Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 10{sup 14} H{sup +}/cm{sup 2}, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.

  1. Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment

    Science.gov (United States)

    Liu, Hui; Zhang, Zongjing; Luo, Weijun

    2018-06-01

    The mechanism of reverse gate leakage current of AlGaN/GaN HEMTs with two different surface treatment methods are studied by using C-V, temperature dependent I-V and theoretical analysis. At the lower reverse bias region (VR >- 3.5 V), the dominant leakage current mechanism of the device with N2 plasma surface treatment is the Poole-Frenkel emission current (PF), and Trap-Assisted Tunneling current (TAT) is the principal leakage current of the device which treated by HCl:H2O solution. At the higher reverse bias region (VR current of the device with N2 plasma surface treatment is one order of magnitude smaller than the device which treated by HCl:H2O solution. This is due to the recovery of Ga-N bond in N2 plasma surface treatment together with the reduction of the shallow traps in post-gate annealing (PGA) process. The measured results agree well with the theoretical calculations and demonstrate N2 plasma surface treatment can reduce the reverse leakage current of the AlGaN/GaN HEMTs.

  2. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Science.gov (United States)

    Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

    2017-12-01

    In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  3. Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs

    NARCIS (Netherlands)

    Karouta, F.; Krämer, M.C.J.C.M.; Kwaspen, J.J.M.; Grzegorczyk, A.; Hageman, P.R.; Hoex, B.; Kessels, W.M.M.; Klootwijk, J.H.; Timmering, E.C.; Smit, M.K.; Wang, J.; Shiojima, K.

    2008-01-01

    We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) characteristics. We have looked at the effect of

  4. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (HEMTs)

    National Research Council Canada - National Science Library

    Fitch, R

    2002-01-01

    Three different passivation layers (SiN(x), MgO, and Sc2O3) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs...

  5. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

    Science.gov (United States)

    Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

    2017-04-01

    In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

  6. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

    International Nuclear Information System (INIS)

    Wang Zheli; Zhou Jianjun; Kong Yuechan; Kong Cen; Dong Xun; Yang Yang; Chen Tangsheng

    2015-01-01

    A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al 0.3 Ga 0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al 2 O 3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al 2 O 3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (L G ) of 1 μm showed a maximum drain current density (I DS ) of 657 mA/mm, a maximum extrinsic transconductance (g m ) of 187 mS/mm and a threshold voltage (V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al 2 O 3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS . (paper)

  7. Characterization of 0.18- μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing

    Science.gov (United States)

    Yoon, Hyung Sup; Min, Byoung-Gue; Lee, Jong Min; Kang, Dong Min; Ahn, Ho Kyun; Cho, Kyu-Jun; Do, Jae-Won; Shin, Min Jeong; Jung, Hyun-Wook; Kim, Sung Il; Kim, Hae Cheon; Lim, Jong Won

    2017-09-01

    We fabricated a 0.18- μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and wet chemical etching using the oxygen plasma treatment and HCl-based cleaning. The two-step gate recessing process exhibited an etch depth of 4.5 nm for the AlGaN layer and the clean surface of AlGaN layer at the AlGaN/gate metal contact region for the AlGaN/GaN HEMT structure. The recessed 0.18 μm × 200 μm AlGaN/GaN HEMT devices showed good DC characteristics, having a good Schottky diode ideality factor of 1.25, an extrinsic transconductance ( g m ) of 345 mS/mm, and a threshold voltage ( V th ) of -2.03 V. The recessed HEMT devices exhibited high RF performance, having a cut-off frequency ( f T ) of 48 GHz and a maximum oscillation frequency ( f max ) of 130 GHz. These devices also showed minimum noise figure of 0.83 dB and associated gain of 12.2 dB at 10 GHz.

  8. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

    International Nuclear Information System (INIS)

    Kong Xin; Wei Ke; Liu Guo-Guo; Liu Xin-Yu

    2012-01-01

    In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications. (interdisciplinary physics and related areas of science and technology)

  9. Investigations of AlGaN/GaN MOS-HEMT with Al2O3 deposition by ultrasonic spray pyrolysis method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Wu, Yu-Sheng; Lee, Ching-Sung; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min; Chiang, Meng-Hsueh

    2015-01-01

    This work investigates Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on SiC substrate by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. The Al 2 O 3 was deposited as gate dielectric and surface passivation simultaneously to effectively suppress gate leakage current, enhance output current density, reduce RF drain current collapse, and improve temperature-dependent stabilities performance. The present MOS-HEMT design has shown improved device performances with respect to a Schottky-gate HEMT, including drain-source saturation current density at zero gate bias (I DSS : 337.6 mA mm −1  → 462.9 mA mm −1 ), gate-voltage swing (GVS: 1.55 V → 2.92 V), two-terminal gate-drain breakdown voltage (BV GD : −103.8 V → −183.5 V), unity-gain cut-off frequency (f T : 11.3 GHz → 17.7 GHz), maximum oscillation frequency (f max : 14.2 GHz → 19.1 GHz), and power added effective (P.A.E.: 25.1% → 43.6%). The bias conditions for measuring f T and f max of the studied MOS-HEMT (Schottky-gate HEMT) are V GS  = −2.5 (−2) V and V DS  = 7 V. The corresponding V GS and V DS biases are −2.5 (−2) V and 15 V for measuring the P.A.E. characteristic. Moreover, small capacitance-voltage (C–V) hysteresis is obtained in the Al 2 O 3 -MOS structure by using USPD. Temperature-dependent characteristics of the present designs at 300–480 K are also studied. (paper)

  10. Scattering and mobility in indium gallium arsenide channel, pseudomorphic high electron mobility transistors (InGaAs pHEMTs)

    International Nuclear Information System (INIS)

    Pearson, J.L.

    1999-03-01

    Extensive transport measurements have been completed on deep and shallow-channelled InGaAs p-HEMTs of varying growth temperature, indium content, spacer thickness and doping density, with a view to a thorough characterisation, both in the metallic and the localised regimes. Particular emphasis was given to MBE grown layers, with characteristics applicable for device use, but low measurement temperatures were necessary to resolve the elastic scattering mechanisms. Measurements made in the metallic regime included transport and quantum mobility - the former over a range of temperatures between 1.5K to 300K. Conductivity measurements were also acquired in the strong localisation regime between about 1.5K and 100K. Experimentally determined parameters were tested for comparison with those predicted by an electrostatic model. Excellent agreement was obtained for carrier density. Other parameters were less well predicted, but the relevant experimental measurements, including linear depletion of the 2DEG, were sensitive to any excess doping above a 'critical' value determined by the model. At low temperature (1.5K), it was found that in all samples tested, transport mobility was strongly limited at all carrier densities by a large q mechanism, possibly intrinsic to the channel. This was ascribed either to scattering by the long-range potentials arising from the indium concentration fluctuations or fluctuations in the thickness of the channel layer. This mechanism dominates the transport at low carrier densities for all samples, but at high carrier density, an additional mechanism is significant for samples with the thinnest spacers tested (2.5nm). This is ascribed to direct electron interaction with the states of the donor layer, and produces a characteristic transport mobility peak. At higher carrier densities, past the peak, quantum mobility was found only to increase monotonically in value. Remote ionised impurity scattering while significant, particularly for samples

  11. Sir Gilbert Thomas Walker

    Indian Academy of Sciences (India)

    He was educated at St Paul's School and later at the. Trinity College ... Walker spent the next 21 years doing research on monsoon ... J Bjerknes in 1969, 11 years after Walker's death. ... water-colours of landscapes at the Shimla Art Exhibition.

  12. Sir Gilbert Thomas Walker

    Indian Academy of Sciences (India)

    playa fundamental role in the variability of the earth's climate. Walker noted a tendency of ... Walker was however not able to ascertain the physical mechanism governing these oscillations. In the first two ... In 1927, he made the follow- ing prophetic statement: "There is, to-day, always a risk that specialists in two subjects,.

  13. Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio

    International Nuclear Information System (INIS)

    Bhattacharjee, A.; Lenka, T. R.

    2014-01-01

    We propose a new structure of In x Al 1−x N/GaN high electron mobility transistor (HEMT) with gate length of 20 nm. The threshold voltage of this HEMT is achieved as −0.472 V. In this device the InAlN barrier layer is intentionally n-doped to boost the I ON /I OFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an I ON = 10 −4.3 A and a very low I OFF = 10 −14.4 A resulting in an I ON /I OFF ratio of 10 10.1 . We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost 10 5 times better I ON /I OFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C–V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability. (semiconductor devices)

  14. Improvements to the extraction of an AlGaN/GaN HEMT small-signal model

    International Nuclear Information System (INIS)

    Pu Yan; Pang Lei; Wang Liang; Chen Xiaojuan; Li Chengzhan; Liu Xinyu

    2009-01-01

    The accurate extraction of AlGaN/GaN HEMT small-signal models, which is an important step in large-signal modeling, can exactly reflect the microwave performance of the physical structure of the device. A new method of extracting the parasitic elements is presented, and an open dummy structure is introduced to obtain the parasitic capacitances. With a Schottky resistor in the gate, a new method is developed to extract R g . In order to characterize the changes of the depletion region under various drain voltages, the drain delay factor is involved in the output conductance of the device. Compared to the traditional method, the fitting of S 11 and S 22 is improved, and f T and f max can be better predicted. The validity of the proposed method is verified with excellent correlation between the measured and simulated S-parameters in the range of 0.1 to 26.1 GHz. (semiconductor devices)

  15. Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

    International Nuclear Information System (INIS)

    Zaidi, Z H; Lee, K B; Qian, H; Jiang, S; Houston, P A; Guiney, I; Wallis, D J; Humphreys, C J

    2015-01-01

    We have demonstrated enhancement mode operation of AlInN/GaN (MIS)HEMTs on Si substrates using the fluorine treatment technique. The plasma RF power and treatment time was optimized to prevent the penetration of the fluorine into the channel region to maintain high channel conductivity and transconductance. An analysis of the threshold voltage was carried out which defined the requirement for the fluorine sheet concentration to exceed the charge at the dielectric/AlInN interface to achieve an increase in the positive threshold voltage after deposition of the dielectric. This illustrates the importance of control of both the plasma conditions and the interfacial charge for a reproducible threshold voltage. A positive threshold voltage of +3 V was achieved with a maximum drain current of 367 mA mm −1 at a forward gate bias of 10 V. (paper)

  16. Remote PECVD silicon nitride films with improved electrical properties for GaAs P-HEMT passivation

    CERN Document Server

    Sohn, M K; Kim, K H; Yang, S G; Seo, K S

    1998-01-01

    In order to obtain thin silicon nitride films with excellent electrical and mechanical properties, we employed RPECVD (Remote Plasma Enhanced Chemical Vapor Deposition) process which produces less plasma-induced damage than the conventional PECVD. Through the optical and electrical measurements of the deposited films, we optimized the various RPECVD process parameters. The optimized silicon nitride films showed excellent characteristics such as small etch rate (approx 33 A/min by 7:1 BHF), high breakdown field (>9 MV/cm), and low compressive stress (approx 3.3x10 sup 9 dyne/cm sup 2). We successfully applied thin RPECVD silicon nitride films to the surface passivation of GaAs pseudomorphic high electron mobility transistors (P-HEMTs) with negligible degradations in DC and RF characteristics.

  17. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

    Directory of Open Access Journals (Sweden)

    Chandan Sharma

    2017-08-01

    Full Text Available This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

  18. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

    Science.gov (United States)

    Sharma, Chandan; Laishram, Robert; Amit, Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

    2017-08-01

    This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

  19. Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

    International Nuclear Information System (INIS)

    Lee, K B; Green, R T; Houston, P A; Tan, W S; Uren, M J; Wallis, D J; Martin, T

    2010-01-01

    Si x N y deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si 3 N 4 film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation

  20. Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method

    International Nuclear Information System (INIS)

    Pongthavornkamol Tiwat; Pang Lei; Yuan Ting-Ting; Liu Xin-Yu

    2014-01-01

    A new modified Angelov current—voltage characteristic model equation is proposed to improve the drain—source current (I ds ) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain—source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V gs = −3.5 V, V ds = 30 V with a frequency of 9.6 GHz are presented. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Characterization of modulation doped pseudomorphic AlGaAs/InGaAs/GaAs HEMT structures by electron beam electroreflectance and photoluminescence

    International Nuclear Information System (INIS)

    Herman, M.A.; Ward, I.D.; Kopf, R.F.; Pearton, S.J.; Jones, E.D.

    1990-01-01

    The authors have investigated the optical transitions present in MBE-grown modulation doped pseudomorphic Al x Ga 1-x As/In y Ga 1-y As/GaAs HEMT structures of 120 Angstrom InGaAs thickness, y values 0 to 0.28, and x values 0.20 to 0.30. From both 300K electron beam electroreflectance (EBER) and 4K photoluminescence (PL) measurements the authors observe transitions from the InGaAs strained quantum well layer. The intensity and lineshape of the InGaAs transition in both optical spectra are affected by processing temperatures, and provides an indication of the quality of the HEMT

  2. Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

    Science.gov (United States)

    Freeman, Jon C.

    2004-01-01

    A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

  3. Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

    Science.gov (United States)

    Kim, Dong-Hwan; Jeong, Jun-Seok; Eom, Su-Keun; Lee, Jae-Gil; Seo, Kwang-Seok; Cha, Ho-Young

    2017-11-01

    In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of 1 × 1019 cm -3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics.

  4. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Hung, Chun-Tse; Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lai, Ying-Nan

    2012-01-01

    Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300–450 K are also studied. (paper)

  5. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Romero, M F; Sanz, M M; Munoz, E [ISOM-Universidad Politecnica de Madrid (UPM). ETSIT, Madrid (Spain); Tanarro, I [Instituto de Estructura de la Materia, CSIC, Madrid (Spain); Jimenez, A, E-mail: itanarro@iem.cfmac.csic.e [Departamento Electronica, Escuela Politecnica Superior, Universidad de Alcala, Alcala de Henares, Madrid (Spain)

    2010-12-15

    In this work, silicon nitride thin films have been deposited by plasma enhanced chemical vapour deposition on both silicon samples and AlGaN/GaN high electron mobility transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH{sub 4} and NH{sub 3} precursors and the formation of H{sub 2} and N{sub 2} have been analysed by mass spectrometry as a function of the NH{sub 3}/SiH{sub 4} flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

  6. Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

    Science.gov (United States)

    Byun, Young-Chul; Lee, Jae-Gil; Meng, Xin; Lee, Joy S.; Lucero, Antonio T.; Kim, Si Joon; Young, Chadwin D.; Kim, Moon J.; Kim, Jiyoung

    2017-08-01

    In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 °C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 °C). Negligible hysteresis (ΔVth 4 V), and low interfacial state density (Dit = 3.69 × 1011 eV-1 cm-2) were observed on recessed gate HEMTs with ˜5 nm ALD-ZrO2 films grown at 100 °C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 °C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 °C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 °C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 °C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance.

  7. Investigations on MgO-dielectric GaN/AlGaN/GaN MOS-HEMTs by using an ultrasonic spray pyrolysis deposition technique

    International Nuclear Information System (INIS)

    Lee, Ching-Sung; Liu, Han-Yin; Wu, Ting-Ting; Hsu, Wei-Chou; Sun, Wen-Ching; Wei, Sung-Yen; Yu, Sheng-Min

    2016-01-01

    This work investigates GaN/Al 0.24 Ga 0.76 N/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) grown on a Si substrate with MgO gate dielectric by using the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. The oxide layer thickness is tuned to be 30 nm with the dielectric constant of 8.8. Electron spectroscopy for chemical analysis (ESCA), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), transmission electron microscopy (TEM), C–V, low-frequency noise spectra, and pulsed I–V measurements are performed to characterize the interface and oxide quality for the MOS-gate structure. Improved device performances have been successfully achieved for the present MOS-HEMT (Schottky-gate HEMT) design, consisting of a maximum drain-source current density (I DS, max ) of 681 (500) mA/mm at V GS  = 4 (2) V, I DS at V GS  = 0 V (I DSS0 ) of 329 (289) mA/mm, gate-voltage swing (GVS) of 2.2 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD ) of −123 (−104) V, turn-on voltage (V on ) of 1.7 (0.8) V, three-terminal off-state drain-source breakdown voltage (BV DS ) of 119 (96) V, and on/off current ratio (I on /I off ) of 2.5 × 10 8 (1.2 × 10 3 ) at 300 K. Improved high-frequency and power performances are also achieved in the present MOS-HEMT design. (paper)

  8. Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

    Science.gov (United States)

    Zhu, Jie-Jie; Ma, Xiao-Hua; Hou, Bin; Chen, Li-Xiang; Zhu, Qing; Hao, Yue

    2017-02-01

    This paper demonstrated the comparative study on interface engineering of AlN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) by using plasma interface pre-treatment in various ambient gases. The 15 nm AlN gate dielectric grown by plasma-enhanced atomic layer deposition significantly suppressed the gate leakage current by about two orders of magnitude and increased the peak field-effect mobility by more than 50%. NH3/N2 nitridation plasma treatment (NPT) was used to remove the 3 nm poor-quality interfacial oxide layer and N2O/N2 oxidation plasma treatment (OPT) to improve the quality of interfacial layer, both resulting in improved dielectric/barrier interface quality, positive threshold voltage (V th) shift larger than 0.9 V, and negligible dispersion. In comparison, however, NPT led to further decrease in interface charges by 3.38 × 1012 cm-2 and an extra positive V th shift of 1.3 V. Analysis with fat field-effect transistors showed that NPT resulted in better sub-threshold characteristics and transconductance linearity for MIS-HEMTs compared with OPT. The comparative study suggested that direct removing the poor interfacial oxide layer by nitridation plasma was superior to improving the quality of interfacial layer by oxidation plasma for the interface engineering of GaN-based MIS-HEMTs.

  9. Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si3N4 passivation

    International Nuclear Information System (INIS)

    Tomosh, K. N.; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P.

    2016-01-01

    The optimum mode of the in situ plasma-chemical etching of a Si 3 N 4 passivating layer in C 3 F 8 /O 2 medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si 3 N 4 growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si 3 N 4 slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si 3 N 4 than without it.

  10. Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

    International Nuclear Information System (INIS)

    Singh, Sarab Preet; Liu, Yi; Ngoo, Yi Jie; Kyaw, Lwin Min; Bera, Milan Kumar; Chor, Eng Fong; Dolmanan, S B; Tripathy, Sudhiranjan

    2015-01-01

    The influence of plasma enhanced chemical vapour deposited (PECVD) silicon nitride (SiN x ) passivation film thickness on In 0.18 Al 0.82 N/GaN/Si heterostructures and HEMTs has been investigated. The formation of Si 3 N 4 was confirmed by x-ray photoelectron spectroscopy (XPS) measurements. X-ray reflectivity (XRR) measurements reveal that both the density and roughness of the SiN x film increase with increasing film thickness. With an increase in SiN x film thickness, a significant increase in two-dimensional electron gas (2DEG) density, drain current, extrinsic transconductance and negative threshold voltage shift of the In 0.18 Al 0.82 /GaN/Si HEMTs are observed. An optimal thickness of SiN x is ∼100 nm and it yields a substantial increase in 2DEG density (∼30%) with a minimum sheet resistance for In 0.18 Al 0.82 N/GaN/Si heterostructures. Furthermore, we correlate the observed SiN x film thickness-dependent electrical characteristics of In 0.18 Al 0.82 /GaN/Si HEMTs with the density of the SiN x film. (paper)

  11. Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.

    Science.gov (United States)

    Heo, Jun-Woo; Kim, Young-Jin; Kim, Hyun-Seok

    2014-12-01

    We report two approaches to fabricating high performance normally-off AIGaN/GaN high-electron mobility transistors (HEMTs). The fabrication techniques employed were based on recessed-metal-insulator-semiconductor (MIS) gate and recessed fluoride-based plasma treatment. They were selectively applied to the area under the gate electrode to deplete the two-dimensional electron gas (2-DEG) density. We found that the recessed gate structure was effective in shifting the threshold voltage by controlling the etching depth of gate region to reduce the AIGaN layer thickness to less than 8 nm. Likewise, the CF4 plasma treatment effectively incorporated negatively charged fluorine ions into the thin AIGaN barrier so that the threshold voltage shifted to higher positive values. In addition to the increased threshold voltage, experimental results showed a maximum drain current and a maximum transconductance of 315 mA/mm and 100 mS/mm, respectively, for the recessed-MIS gate HEMT, and 340 mA/mm and 330 mS/mm, respectively, for the fluoride-based plasma treated HEMT.

  12. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

    Science.gov (United States)

    Nigam, Adarsh; Bhat, Thirumaleshwara N.; Rajamani, Saravanan; Dolmanan, Surani Bin; Tripathy, Sudhiranjan; Kumar, Mahesh

    2017-08-01

    In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ˜1270cm2/Vs, ˜2×1013 cm-2 and ˜0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  13. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Duan Xiao-Ling; Zhang Jin-Cheng; Xiao Ming; Zhao Yi; Ning Jing; Hao Yue

    2016-01-01

    A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage ( V B ) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. (paper)

  14. 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.

    2017-08-01

    The DC and RF performance of 30 nm gate length enhancement mode (E-mode) InAlN/AlN/GaN high electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have been investigated using the Synopsys TCAD tool. The proposed device has the features of a recessed T-gate structure, InGaN back barrier and Al2O3 passivated device surface. The proposed HEMT exhibits a maximum drain current density of 2.1 A/mm, transconductance {g}{{m}} of 1050 mS/mm, current gain cut-off frequency {f}{{t}} of 350 GHz and power gain cut-off frequency {f}\\max of 340 GHz. At room temperature the measured carrier mobility (μ), sheet charge carrier density ({n}{{s}}) and breakdown voltage are 1580 cm2/(V \\cdot s), 1.9× {10}13 {{cm}}-2, and 10.7 V respectively. The superlatives of the proposed HEMTs are bewitching competitor or future sub-millimeter wave high power RF VLSI circuit applications.

  15. Analysis of field-plate effects on buffer-related lag phenomena and current collapse in GaN MESFETs and AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Horio, Kazushige; Nakajima, Atsushi; Itagaki, Keiichi

    2009-01-01

    A two-dimensional transient analysis of field-plate GaN MESFETs and AlGaN/GaN HEMTs is performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer, and quasi-pulsed current–voltage curves are derived from them. How the existence of a field plate affects buffer-related drain lag, gate lag and current collapse is studied. It is shown that in both MESFET and HEMT, the drain lag is reduced by introducing a field plate because electron injection into the buffer layer is weakened by it, and the buffer-trapping effects are reduced. It is also shown that the field plate could reduce buffer-related current collapse and gate lag in the FETs. The dependence of lag phenomena and current collapse on the field-plate length and on the SiN passivation layer thickness is also studied. The work suggests that in the field-plate structures, there is an optimum thickness of the SiN layer to minimize the buffer-related current collapse and drain lag in GaN MESFETs and AlGaN/GaN HEMTs

  16. Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation

    Energy Technology Data Exchange (ETDEWEB)

    Tomosh, K. N., E-mail: sky77781@mail.ru; Pavlov, A. Yu.; Pavlov, V. Yu.; Khabibullin, R. A.; Arutyunyan, S. S.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra-High-Frequency Semiconductor Electronics (Russian Federation)

    2016-10-15

    The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of fabricating AlGaN/AlN/GaN HEMTs. It is found that a bias of 40–50 V at a high-frequency electrode provides anisotropic etching of the insulator through a resist mask and introduces no appreciable radiation-induced defects upon overetching of the insulator films in the region of gate-metallization formation. To estimate the effect of in situ Si{sub 3}N{sub 4} growth together with the heterostructure in one process on the AlGaN/AlN/GaN HEMT characteristics, transistors with gates without the insulator and with gates through Si{sub 3}N{sub 4} slits are fabricated. The highest drain current of the AlGaN/AlN/GaN HEMT at 0 V at the gate is shown to be 1.5 times higher in the presence of Si{sub 3}N{sub 4} than without it.

  17. Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111 substrate

    Directory of Open Access Journals (Sweden)

    Adarsh Nigam

    2017-08-01

    Full Text Available In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs characteristics fabricated on Si(111 substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The present simulator tool can be used to design new device structures for III-nitride technology.

  18. Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method

    International Nuclear Information System (INIS)

    Chou, Bo-Yi; Hsu, Wei-Chou; Liu, Han-Yin; Ho, Chiu-Sheng; Lee, Ching-Sung

    2013-01-01

    This paper reports Al 0.27 Ga 0.73 N/GaN metal–oxide–semiconductor high electron mobility transistors (MOS-HEMTs) with stacked Al 2 O 3 /HfO 2 gate dielectrics by using hydrogen peroxideoxidation/sputtering techniques. The Al 2 O 3 employed as a gate dielectric and surface passivation layer effectively suppresses the gate leakage current, improves RF drain current collapse and exhibits good thermal stability. Moreover, by stacking the good insulating high-k HfO 2 dielectric further suppresses the gate leakage, enhances the dielectric breakdown field and power-added efficiency, and decreases the equivalent oxide thickness. The present MOS-HEMT design has demonstrated superior improvements of 10.1% (16.4%) in the maximum drain–source current (I DS,max ), 11.4% (22.5%) in the gate voltage swing and 12.5%/14.4% (21.9%/22.3%) in the two-terminal gate–drain breakdown/turn-on voltages (BV GD /V ON ), and the present design also demonstrates the lowest gate leakage current and best thermal stability characteristics as compared to two reference MOS-HEMTs with a single Al 2 O 3 /(HfO 2 ) dielectric layer of the same physical thickness. (invited paper)

  19. Multiscale Modelling of Electronic and Thermal Transport : Thermoelectrics, Turbostratic 2D Materials and Diamond/c-BN HEMT

    Science.gov (United States)

    Narendra, Namita

    Multiscale modelling has become necessary with the advent of low dimensional devices as well as use of heterostructures which necessitates atomistic treatment of the interfaces. Multiscale methodology is able to capture the quantum mechanical atomistic details while enabling the simulation of micro-scale structures at the same time. In this thesis, multiscale modelling has been applied to study transport in thermoelectrics, turbostratic 2D MoS2/WS 2 heterostructure and diamond/c-BN high mobility electron transistor (HEMT). The possibility of enhanced thermoelectric properties through nanostructuring is investigated theoretically in a p-type Bi2Te3/Sb 2Te3 heterostructure. A multi-scale modeling approach is adopted to account for the atomistic characteristics of the interface as well as the carrier/phonon transport properties in the larger scales. The calculations clearly illustrate the desired impact of carrier energy filtering at the potential barrier by locally boosting the power factor over a sizable distance in the well region. Further, the phonon transport analysis illustrates a considerable reduction in the thermal conductivity at the heterointerface. Both effects are expected to provide an effective means to engineer higher zT in this material system. Next, power factor enhancement through resonant doping is explored in Bi2Te3 based on a detailed first-principles study. Of the dopant atoms investigated, it is found that the formation of resonant states may be achieved with In, Po and Na, leading potentially to significant increase in the thermoelectric efficiency at room temperature. While doping with Po forms twin resonant state peaks in the valence and conduction bands, the incorporation of Na or In results in the resonant states close to the valence band edge. Further analysis reveals the origin of these resonant states. Transport calculations are also carried out to estimate the anticipated level of enhancement. Next, in-plane and cross-plane transport

  20. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy; Um sistema de modulos NIM conjugados com entrada opcional por amplificador pHEMT para espectroscopia beta e gama

    Energy Technology Data Exchange (ETDEWEB)

    Konrad, Barbara; Lüdke, Everton, E-mail: barbarakonradmev@gmail.com, E-mail: eludke@smail.ufsm.br [Universidade Federal de Santa Maria (LAE/UFSM), RS (Brazil). Lab. de Astrofisica e Eletronica

    2014-07-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles.

  1. A NIM (Nuclear Instrumentation Module) system conjugated with optional input for pHEMT amplifier for beta and gamma spectroscopy

    International Nuclear Information System (INIS)

    Konrad, Barbara; Lüdke, Everton

    2014-01-01

    This work presents a high speed NIM module (Nuclear Instrumentation Module) to detect radiation, gamma and muons, as part of a system for natural radiation monitoring and of extraterrestrial origin. The subsystem developed consists of a preamplifier and an integrated SCA (Single Channel Analyzer), including power supplies of ± 12 and ± 24V with derivations of +3.6 and ± 5V. The single channel analyzer board, consisting of discrete logic components, operating in window modes, normal and integral. The pulse shaping block is made up of two voltage comparators working at 120 MHz with a response time > 60 ns and a logic anticoincidence system. The preamplifier promotes a noise reduction and introduces the impedance matching between the output of anode / diode photomultiplier tubes (PMTs) and subsequent equipment, providing an input impedance of 1MΩ and output impedance of 40 to 140Ω. The shaper amplifier is non-inverting and has variable input capacitance of 1000 pF. The upper and lower thresholds of the SCA are adjustable from 0 to ± 10V, and the equipment is compatible with various types of detectors, like PMTs coupled to sodium iodide crystals. For use with liquid scintillators and photodiodes with crystals (CsI: Tl) is proposed to include a preamplifier circuit pHEMT (pseudomorphic High Electron Mobility Transistor) integrated. Yet, the system presents the possibility of applications for various purposes of gamma spectroscopy and automatic detection of events producing of beta particles

  2. Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    YongHe Chen

    2015-09-01

    Full Text Available By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT at gate bias beyond threshold voltage is studied. It is revealed that reverse current consists of area-related and perimeter-related current. An analytical model of electric field calculation is proposed to obtain the average electric field around the gate edge at high revers bias and estimate the effective range of edge leakage current. When the reverse bias increases, the increment of electric field is around the gate edge of a distance of ΔL, and perimeter-related gate edge current keeps increasing. By using the calculated electric field and the temperature-dependent current-voltage measurements, the edge gate leakage current mechanism is found to be Fowler-Nordheim tunneling at gate bias bellows -15V caused by the lateral extended depletion region induced barrier thinning. Effective range of edge current of Schottky diodes is about hundred to several hundred nano-meters, and is different in different shapes of Schottky diodes.

  3. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure for improving DC and RF characteristics

    Science.gov (United States)

    Razavi, S. M.; Zahiri, S. H.; Hosseini, S. E.

    2017-04-01

    In this study, a gallium nitride (GaN) high electron mobility transistor (HEMT) with recessed insulator and barrier is reported. In the proposed structure, insulator is recessed into the barrier at the drain side and barrier is recessed into the buffer layer at the source side. We study important device characteristics such as electric field, breakdown voltage, drain current, maximum output power density, gate-drain capacitance, short channel effects and DC transconductance using two-dimensional and two-carrier device simulator. Recessed insulator in the drain side of the proposed structure reduces maximum electric field in the channel and therefore increases the breakdown voltage and maximum output power density compared to the conventional counterpart. Also, gate-drain capacitance value in the proposed structure is less than that of the conventional structure. Overall, the proposed structure reduces short channel effects. Because of the recessed regions at both the source and the drain sides, the average barrier thickness of the proposed structure is not changed. Thus, the drain current of the proposed structure is almost equivalent to that of the conventional transistor. In this work, length ( L r) and thickness ( T r) of the recessed region of the barrier at the source side are the same as those of the insulator at the drain side.

  4. Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire

    Science.gov (United States)

    Freeman, Jon C.; Mueller, Wolfgang

    2008-01-01

    Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

  5. Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs

    Science.gov (United States)

    Ahmed, Nadim; Dutta, Aloke K.

    2017-06-01

    In this paper, we present a completely analytical model for the 2DEG concentration in AlGaN/GaN HEMTs as a function of gate bias, considering the donor-like trap states present at the metal/AlGaN interface to be the primary source of 2DEG carriers. To the best of our knowledge, this is a completely new contribution of this work. The electric field in the AlGaN layer is calculated using this model, which is further used to model the gate leakage current under reverse bias. We have modified the existing TTT (Thermionic Trap-Assisted Tunneling) current model, taking into account the effect of both metal/AlGaN interface traps as well as AlGaN bulk traps. The gate current under forward bias is also modeled using the existing thermionic emission model, approximating it by its Taylor series expansion. To take into account the effect of non-zero drain-source bias (VDS), an empirical fitting parameter is introduced in order to model the channel voltage in terms of VDS. The results of our models have been compared with the experimental data reported in the literature for three different devices, and the match is found to be excellent for both forward and reverse bias as well as for zero and non-zero VDS.

  6. Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment

    International Nuclear Information System (INIS)

    Mi Min-Han; Zhang Kai; Zhao Sheng-Lei; Wang Chong; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue

    2015-01-01

    The influence of an N 2 O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (g m ) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (D T ) and time constant (τ T ) of the N 2 O-treated device are smaller than those of a non-treated device. The results indicate that the N 2 O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device. (paper)

  7. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Ming; Wang Yong; Wong Kai-Ming; Lau Kei-May

    2014-01-01

    High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10 −8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated

  8. Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

    International Nuclear Information System (INIS)

    Huang Jie; Li Ming; Tang Chak-Wah; Lau Kei-May

    2014-01-01

    High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal—organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (g m ) of 247 mS/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the f T and f MAX is 50% and 52% higher, respectively. (interdisciplinary physics and related areas of science and technology)

  9. Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

    Directory of Open Access Journals (Sweden)

    Liwei Jin

    2013-01-01

    Full Text Available This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.

  10. Simulation study of HEMT structures with HfO{sub 2} cap layer for mitigating inverse piezoelectric effect related device failures

    Energy Technology Data Exchange (ETDEWEB)

    Nagulapally, Deepthi; Joshi, Ravi P., E-mail: rjoshi@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529-0246 (United States); Pradhan, Aswini [Department of Engineering and Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States)

    2015-01-15

    The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO{sub 2} “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides.

  11. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  12. Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing

    International Nuclear Information System (INIS)

    Rabbaa, S; Stiens, J

    2012-01-01

    Gallium nitride (GaN) is a relatively new semiconductor material that has the potential of replacing gallium arsenide (GaAs) in some of the more recent technological applications, for example chemical sensor applications. In this paper, we introduce a triangular quantum well model for an undoped AlGaN/GaN high electron mobility transistor (HEMT) structure used as a chemical and biological sensor for pH and dipole moment measurements of polar liquids. We have performed theoretical calculations related to the HEMT characteristics and we have compared them with experimental measurements carried out in many previous papers. These calculations include the current-voltage (I-V) characteristics of the device, the surface potential, the change in the drain current with the dipole moment and the drain current as a function of pH. The results exhibit good agreement with experimental measurements for different polar liquids and electrolyte solutions. It is also found that the drain current of the device exhibits a large linear variation with the dipole moment, and that the surface potential and the drain current depend strongly on the pH. Therefore, it can distinguish molecules with slightly different dipole moments and solutions with small variations in pH. The ability of the device to sense biomolecules (such as proteins) with very large dipole moments is investigated.

  13. Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

    International Nuclear Information System (INIS)

    Sun Wei-Wei; Zheng Xue-Feng; Fan Shuang; Wang Chong; Du Ming; Zhang Kai; Mao Wei; Zhang Jin-Cheng; Hao Yue; Chen Wei-Wei; Cao Yan-Rong; Ma Xiao-Hua

    2015-01-01

    The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons. (paper)

  14. Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications

    International Nuclear Information System (INIS)

    Faramehr, Soroush; Kalna, Karol; Igić, Petar

    2014-01-01

    A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V–4000 V for a source-to-drain spacing (L SD ) of 6 μm–32 μm, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 μm gate length GaN HEMT with a source-to-drain spacing of 6 μm against its experimental transfer characteristics and BV. The specific on-resistance R S for the new power transistor with the source-to-drain spacing of 6 μm showing BV = 1400 V and the source-to-drain spacing of 8 μm showing BV = 1800 V is found to be 2.3 mΩ · cm 2 and 3.5 mΩ · cm 2 , respectively. Further improvement up to BV  = 4000 V can be achieved by increasing the source-to-drain spacing to 32 μm with the specific on-resistance of R S = 35.5 mΩ · cm 2 . The leakage current in the proposed devices stays in the range of ∼5 × 10 −9 mA mm −1 . (paper)

  15. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    International Nuclear Information System (INIS)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

    2012-01-01

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

    2012-01-15

    During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

    Directory of Open Access Journals (Sweden)

    Xiaoqing Xu

    2016-11-01

    Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

  18. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

    Science.gov (United States)

    Wang, Cong; Kim, Nam-Young

    2012-02-07

    Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

  19. High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors.

    Science.gov (United States)

    Sarangadharan, Indu; Regmi, Abiral; Chen, Yen-Wen; Hsu, Chen-Pin; Chen, Pei-Chi; Chang, Wen-Hsin; Lee, Geng-Yen; Chyi, Jen-Inn; Shiesh, Shu-Chu; Lee, Gwo-Bin; Wang, Yu-Lin

    2018-02-15

    In this study, we report the development of a high sensitivity assay for the detection of cardiac troponin I using electrical double layer gated high field AlGaN/GaN HEMT biosensor. The unique gating mechanism overcomes the drawback of charge screening seen in traditional FET based biosensors, allowing detection of target proteins in physiological solutions without sample processing steps. Troponin I specific antibody and aptamer are used as receptors. The tests carried out using purified protein solution and clinical serum samples depict high sensitivity, specificity and wide dynamic range (0.006-148ng/mL). No additional wash or sample pre-treatment steps are required, which greatly simplifies the biosensor system. The miniaturized HEMT chip is packaged in a polymer substrate and easily integrated with a portable measurement unit, to carry out quantitative troponin I detection in serum samples with < 2µl sample volume in 5min. The integrated prototype biosensor unit demonstrates the potential of the method as a rapid, inexpensive, high sensitivity CVD biomarker assay. The highly simplified protocols and enhanced sensor performance make our biosensor an ideal choice for point of care diagnostics and personal healthcare systems. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.

    Science.gov (United States)

    Xu, Peiqiang; Jiang, Yang; Chen, Yao; Ma, Ziguang; Wang, Xiaoli; Deng, Zhen; Li, Yan; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

    2012-02-20

    GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier.

  1. Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

    Science.gov (United States)

    Kubo, Toshiharu; Egawa, Takashi

    2017-12-01

    HfO2/AlGaN/GaN metal-insulator-semiconductor (MIS)-type high electron mobility transistors (HEMTs) on Si substrates were fabricated by atomic layer deposition of HfO2 layers and post-deposition annealing (PDA). The current-voltage characteristics of the MIS-HEMTs with as-deposited HfO2 layers showed a low gate leakage current (I g) despite the relatively low band gap of HfO2, and a dynamic threshold voltage shift (ΔV th) was observed. After PDA above 500 °C, ΔV th was reduced from 2.9 to 0.7 V with an increase in I g from 2.2 × 10-7 to 4.8 × 10-2 mA mm-1. Effects of the PDA on the HfO2 layer and the HfO2/AlGaN interface were investigated by x-ray photoelectron spectroscopy (XPS) using synchrotron radiation. XPS data showed that oxygen vacancies exist in the as-deposited HfO2 layers and they disappeared with an increase in the PDA temperature. These results indicate that the deep electron traps that cause ΔV th are related to the oxygen vacancies in the HfO2 layers.

  2. Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

    Science.gov (United States)

    Murugapandiyan, P.; Ravimaran, S.; William, J.; Meenakshi Sundaram, K.

    2017-11-01

    In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz, power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications.

  3. Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

    International Nuclear Information System (INIS)

    Palma, John; Mil'shtein, Samson

    2014-01-01

    Off-state breakdown voltage, V br , is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V br . This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V br on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V br upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages

  4. Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings — quantum well system

    Science.gov (United States)

    Sibirmovsky, Y. D.; Vasil'evskii, I. S.; Vinichenko, A. N.; Zhigunov, D. M.; Eremin, I. S.; Kolentsova, O. S.; Safonov, D. A.; Kargin, N. I.

    2017-11-01

    Samples of δ-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

  5. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

    Science.gov (United States)

    Panda, D. K.; Lenka, T. R.

    2017-06-01

    An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d-V ds, I d-V gs, and C-V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

  6. Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

    Science.gov (United States)

    Lumbantoruan, Franky J.; Wong, Yuen-Yee; Huang, Wei-Ching; Yu, Hung-Wei; Chang, Edward-Yi

    2017-10-01

    NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm-2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm-3 and the 2 DEG electron density recovered to 9.57 × 1012 cm-2.

  7. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

    Science.gov (United States)

    Son, Dong-Hyeok; Jo, Young-Woo; Won, Chul-Ho; Lee, Jun-Hyeok; Seo, Jae Hwa; Lee, Sang-Heung; Lim, Jong-Won; Kim, Ji Heon; Kang, In Man; Cristoloveanu, Sorin; Lee, Jung-Hee

    2018-03-01

    Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10-12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

  8. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tarasova, E. A.; Obolenskaya, E. S., E-mail: obolensk@rf.unn.ru; Hananova, A. V.; Obolensky, S. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Zemliakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Nezhenzev, A. V. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation); Saharov, A. V.; Zazul’nokov, A. F.; Lundin, V. V.; Zavarin, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Medvedev, G. V. [JSC RPE Salut (Russian Federation)

    2016-12-15

    The sensitivity of classical n{sup +}/n{sup –} GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

  9. Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

    Science.gov (United States)

    Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

    2018-04-01

    This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

  10. Epidemiología de las lesiones por presión en los pacientes internados en el Hospital de Niños Dr. Roberto Gilbert Elizalde desde el mes de enero del 2013 a junio del 2014.

    OpenAIRE

    Neira Morante, Martha Leticia

    2015-01-01

    Determinar la epidemiología de las lesiones por presión en los pacientes internados en el hospital de niños Dr. Roberto Gilbert E. desde enero de 2013 a junio de 2014. -Objetivos Específicos. ¿ Identificar la causa de las lesiones por presión ¿ Establecer la edad, sexo, tipo y ubicación de la lesión más frecuentes. ¿ Relacionar el estado nutricional de los pacientes y la aparición de lesiones por presión. ¿ Describir la respuesta al tratamiento empleado Método. Estudio pr...

  11. Genetics Home Reference: Gilbert syndrome

    Science.gov (United States)

    ... instance because of dehydration, prolonged periods without food (fasting), illness, vigorous exercise, or menstruation. Some people with ... to conjugated bilirubin. Glucuronidation makes bilirubin dissolvable in water so that it can be removed from the ...

  12. Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS)

    Science.gov (United States)

    Goyal, Anshu; Yadav, Brajesh S.; Raman, R.; Kapoor, Ashok K.

    2018-02-01

    Angle resolved X-ray photoelectron spectroscopy (ARXPS) and secondary ion mass spectrometry (SIMS) investigations have been carried out to characterize the GaN cap layer in AlGaN/GaN HEMT structure. The paper discusses the qualitative (presence or absence of a cap layer) and quantitative (cap layer thickness) characterization of cap layer in HEMT structure non-destructively using ARXPS measurements in conjunction with the theoretical modeling. Further the relative sensitive factor (RSF=σ/Ga σAl ) for Ga to Al ratio was estimated to be 0.963 and was used in the quantification of GaN cap layer thickness. Our results show that Al/Ga intensity ratio varies with the emission angle in the presence of GaN cap layer and otherwise remains constant. Also, the modeling of this intensity ratio gives its thickness. The finding of ARXPS was also substantiated by SIMS depth profiling studies.

  13. Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS

    Directory of Open Access Journals (Sweden)

    Anshu Goyal

    2018-02-01

    Full Text Available Angle resolved X-ray photoelectron spectroscopy (ARXPS and secondary ion mass spectrometry (SIMS investigations have been carried out to characterize the GaN cap layer in AlGaN/GaN HEMT structure. The paper discusses the qualitative (presence or absence of a cap layer and quantitative (cap layer thickness characterization of cap layer in HEMT structure non-destructively using ARXPS measurements in conjunction with the theoretical modeling. Further the relative sensitive factor (RSF=σGaσAl for Ga to Al ratio was estimated to be 0.963 and was used in the quantification of GaN cap layer thickness. Our results show that Al/Ga intensity ratio varies with the emission angle in the presence of GaN cap layer and otherwise remains constant. Also, the modeling of this intensity ratio gives its thickness. The finding of ARXPS was also substantiated by SIMS depth profiling studies.

  14. Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

    Science.gov (United States)

    Li, Weiyi; Zhang, Zhili; Fu, Kai; Yu, Guohao; Zhang, Xiaodong; Sun, Shichuang; Song, Liang; Hao, Ronghui; Fan, Yaming; Cai, Yong; Zhang, Baoshun

    2017-07-01

    We proposed a novel AlGaN/GaN enhancement-mode (E-mode) high electron mobility transistor (HEMT) with a dual-gate structure and carried out the detailed numerical simulation of device operation using Silvaco Atlas. The dual-gate device is based on a cascode connection of an E-mode and a D-mode gate. The simulation results show that electric field under the gate is decreased by more than 70% compared to that of the conventional E-mode MIS-HEMTs (from 2.83 MV/cm decreased to 0.83 MV/cm). Thus, with the discussion of ionized trap density, the proposed dual-gate structure can highly improve electric field-related reliability, such as, threshold voltage stability. In addition, compared with HEMT with field plate structure, the proposed structure exhibits a simplified fabrication process and a more effective suppression of high electric field. Project supported by the Key Technologies Support Program of Jiangsu Province (No. BE2013002-2) and the National Key Scientific Instrument and Equipment Development Projects of China (No. 2013YQ470767).

  15. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

    Science.gov (United States)

    Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

    2018-04-01

    Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

  16. Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

    Directory of Open Access Journals (Sweden)

    P. Murugapandiyan

    2017-12-01

    Full Text Available A novel 50 nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed. The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool. The remarkable potential device features such as heavily doped source/drain region, Al2O3 passivated device surface helped the device to suppress the parasitic resistances and capacitances of the transistor for enhancing the microwave characteristics. The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns of 1.9 × 1013 cm−2, the drain current density (Ids of 2.1 A/mm, the transconductance (gm of 800 mS/mm, the breakdown voltage (VBR of 40 V, the current gain cut-off frequency (ft of 221 GHz and the power gain cut-off frequency (fmax of 290 GHz. The superior static and dynamic characteristics of obtained InAlN/GaN HEMTs undoubtedly placed the device at the forefront for high power millimeter wave applications.

  17. The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yun-Hsiang [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); A*STAR Institute of Microelectronics, Singapore 117685 (Singapore); Liang, Yung C., E-mail: chii@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); National University of Singapore (Suzhou) Research Institute, Suzhou 215123 (China); Samudra, Ganesh S. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); Huang, Chih-Fang [Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Kuo, Wei-Hung [Industrial Technology Research Institute, Chutung 31040, Taiwan (China); Lo, Guo-Qiang [A*STAR Institute of Microelectronics, Singapore 117685 (Singapore)

    2016-06-06

    In this paper, a normally-off AlGaN/GaN MIS-HEMT with improved threshold voltage (V{sub TH}) thermal stability is reported with investigations on its physical mechanism. The normally-off operation of the device is achieved from novel short argon plasma treatment (APT) prior to the fluorine plasma treatment (FPT) on Al{sub 2}O{sub 3} gate dielectrics. For the MIS-HEMT with FPT only, its V{sub TH} drops from 4.2 V at room temperature to 0.5 V at 200 °C. Alternatively, for the device with APT-then-FPT process, its V{sub TH} can retain at 2.5 V at 200 °C due to the increased amount of deep-level traps that do not emit electrons at 200 °C. This thermally stable V{sub TH} makes this device suitable for high power applications. The depth profile of the F atoms in Al{sub 2}O{sub 3}, measured by the secondary ion mass spectroscopy, reveals a significant increase in the F concentration when APT is conducted prior to FPT. The X-ray photoelectron spectroscopy (XPS) analysis on the plasma-treated Al{sub 2}O{sub 3} surfaces observes higher composition of Al-F bonds if APT was applied before FPT. The enhanced breaking of Al-O bonds due to Ar bombardment assisted in the increased incorporation of F radicals at the surface during the subsequent FPT process. The Schrödinger equation of Al{sub 2}O{sub x}F{sub y} cells, with the same Al-F compositions as obtained from XPS, was solved by Gaussian 09 molecular simulations to extract electron state distribution as a function of energy. The simulation results show creation of the deeper trap states in the Al{sub 2}O{sub 3} bandgap when APT is used before FPT. Finally, the trap distribution extracted from the simulations is verified by the gate-stress experimental characterization to confirm the physical mechanism described.

  18. Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

    International Nuclear Information System (INIS)

    Wang Yong; Yu Nai-Sen; Li Ming; Lau Kei-May

    2011-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I dss of 737mA/mm, peak transconductance G m of 185mS/mm, drain leakage current density I ds of 1.7μA/mm, gate leakage current density I gs of 24.8 μA/mm and off-state breakdown voltage V BR of 67 V are achieved with L g /W g /L gs /L gd = 1/10/1/1 μm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f T of 8.3 GHz and power gain cutoff frequency f max of 19.9 GHz are achieved with L g /W g /L gs /L gd = 1/100/1/1 μm. Furthermore, the best rf performance with f T of 14.5 GHz and f max of 37.3 GHz is achieved with a reduced gate length of 0.7μm. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

    International Nuclear Information System (INIS)

    Wu Chia-Song; Chang Chien-Huang; Liu Hsing-Chung; Lin Tah-Yeong; Wu Hsien-Ming

    2010-01-01

    This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5-40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a V ds of 2 V and a V gs of -0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications. (semiconductor integrated circuits)

  20. Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Celik, Ozlem; Tiras, Engin; Ardali, Sukru [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470 Eskisehir (Turkey); Lisesivdin, Sefer Bora [Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500 Ankara (Turkey); Ozbay, Ekmel [Nanotechnology Research Center, Department of Physics, and Department of Electrical and Electronics Engineering, Bilkent University, Ankara (Turkey)

    2011-05-15

    Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained by fitting the nonoscillatory component to a polynomial of second degree, and then subtracting it from the raw experimental data. It is shown that only first subband is occupied with electrons. The two-dimensional (2D) carrier density and the Fermi energy with respect to subband energy (E{sub F}-E{sub 1}) have been determined from the periods of the SdH oscillations. The in-plane effective mass (m*) and the quantum lifetime ({tau}{sub q}) of electrons have been obtained from the temperature and magnetic field dependencies of the SdH amplitude, respectively. The in-plane effective mass of 2D electrons is in the range between 0.19 m{sub 0} and 0.22 m{sub 0}. Our results for in-plane effective mass are in good agreement with those reported in the literature (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

    Science.gov (United States)

    Panda, D. K.; Lenka, T. R.

    2017-12-01

    In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated.

  2. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

    Energy Technology Data Exchange (ETDEWEB)

    Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Yagovkina, M. A.; Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Cherkashin, N. A. [CEMES–CNRS—Université de Toulouse (France)

    2016-09-15

    The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2', 3 × 2', and 6 × 2' is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.

  3. A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

    International Nuclear Information System (INIS)

    Zheng Jia-Xin; Ma Xiao-Hua; Zhang Hong-He; Zhang Meng; Hao Yue; Lu Yang; Zhao Bo-Chao; Cao Meng-Yi

    2015-01-01

    A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f 0 and 2f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. (paper)

  4. Hiperbilirrubinemia neonatal prolongada devido à associação entre síndrome de Gilbert e doença hemolítica por incompatibilidade RhD Persistent neonatal hyperbilirubinemia resulting from Gilbert's syndrome in association with RhD hemolytic disease

    Directory of Open Access Journals (Sweden)

    Fernando P. Facchini

    2005-10-01

    Full Text Available OBJETIVO: Relatar associação infreqüente de patologia que cause aumento considerável de produção de bilirrubina e outra diminuição importante na sua excreção. DESCRIÇÃO: Mãe tercigesta, Rh negativo. Na primeira gestação, gerou recém-nascido normal, de termo, não tendo recebido imunoglobulina humana anti-RhD. A segunda gestação complicou-se por isoimunização Rh, dando à luz neonato de termo, o qual necessitou três exsanguinotransfusões e faleceu com 8 dias de vida. Na gestação atual, conseguiu dar à luz a termo recém-nascido tipo ORh positivo, Coombs direto positivo, bilirrubina de cordão 6,5 mg/dl e hematócrito 44%. Com 5 horas de vida, estava ictérico, tendo sido iniciados fenobarbital (por 3 dias e fototerapia intensiva. A hiperbilirrubinemia foi logo controlada, porém ascendia rapidamente sempre que a fototerapia era suspensa. No 10° dia de vida, a criança foi transfundida por anemia importante. Em vista da persistência da icterícia, no 13° dia de vida pensou-se em associação com síndrome de Gilbert, e o seqüenciamento de DNA foi solicitado. O resultado mostrou genótipo mutante homozigoto UDPT1A1[TA]7TAA. Permaneceu em fototerapia até o 17° dia de vida. Recebeu alta no dia seguinte, após controle de bilirrubinemia. Voltou para acompanhamento ambulatorial e apresentou desenvolvimentos pondo-estatural e neurológico normais. COMENTÁRIOS: O caso ressalta a importância da associação do aumento de produção/diminuição de excreção de bilirrubina na gênese de hiperbilirrubinemias prolongadas, intensas e passíveis de causar kernicterus, se não tratadas vigorosamente. Demonstra, ainda, a eficácia da fototerapia intensiva, reduzindo os riscos de tratamentos mais agressivos. Ressalta, também, a importância do acompanhamento das icterícias neonatais até a completa remissão dos sintomas.OBJECTIVE: To report on an infrequent association of pathologies causing considerable increase in bilirubin

  5. On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

    2016-01-01

    The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  6. Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation

    Science.gov (United States)

    Bai, Zhiyuan; Du, Jiangfeng; Liu, Yong; Xin, Qi; Liu, Yang; Yu, Qi

    2017-07-01

    In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current Ids, an increase of on-resistance, serious nonlinearity of transconductance gm, and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiNx/GaN interface traps with energy level of EC-0.42 eV to EC-0.45 eV and density of 3.2 × 1012 ∼ 5.0 × 1012 eV-1 cm-2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 1011 cm-2 and energy level of EC-0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation. He is currently an Associate Professor with State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, UESTC. He is the author of over 30 peer-reviewed journal papers and more than 20 conference papers. He has also hold over 20 patents. His research interests include Gallium Nitride based high-voltage power switching devices, microwave and millimeter-wave power devices and integrated technologies. Dr. Yu was a recipient of the prestigious Award of Science and Technology of China

  7. Thirty-five-nm T-Gate In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs with an ultrahigh fmax of 610 GHz

    International Nuclear Information System (INIS)

    Choi, Do-Young; Kim, Sung-Ho; Choi, Gil-Bok; Jung, Sung-Woo; Jeong, Yoon-Ha

    2010-01-01

    Thirty-five-nanometer T-gate GaAs-based In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistors (mHEMTs) are successfully fabricated using a zigzag-shaped T-gate. We obtain a maximum extrinsic transconductance (g m ) of 1060 mS/mm and a maximum oscillation frequency (f max ) of 610 GHz. These superior results are obtained by reducing the T-gate's length to 35 nm without the assistance of a supporting layer and by fabricating a wide-recessed-gate structure. The stand-alone 35-nm T-gate effectively improves the device performance because it doesn't cause additional parasitic capacitances. The wide-recessed-gate structure alleviates impact ionization in the channel, which suppresses the kink effect in the output characteristic and reduces the output conductance (g ds ). In addition, the wide-recessed-gate structure reduces the gate-to-drain capacitance (C gd ); consequently realizing a state-of-the-art f max . The f max of 610 GHz, to our knowledge, is the highest value reported to date for GaAs-based HEMTs.

  8. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

    International Nuclear Information System (INIS)

    Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

    2008-01-01

    The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

  9. On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

    2016-08-15

    The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  10. Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

    Directory of Open Access Journals (Sweden)

    Yanli Liu

    2015-01-01

    Full Text Available The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

  11. 2154-IJBCS-Article-Gilbert Tite Layeye

    African Journals Online (AJOL)

    hp

    fécaux dans l'eau des échantillons révèle que la contamination provient de la surface. Pour caractériser le seuil ... durée de vie de E. Coli dans divers types de sols, les résultats .... de Contrôle Qualité des Eaux et Aliments. (LCQEA) de la ...

  12. ESH&Q Joule: Greg Gilbert | News

    Science.gov (United States)

    Financial Officer Finance Section Office of the Chief Operating Officer Facilities Engineering Services Accelerator Division Accelerator Physics Center Office of the Chief Safety Officer Environment, Safety, Health and Quality Section Office of the Chief Project Officer Office of Project Support Services Office of

  13. Gilbert Arenas ekstravertne introvert / Tanel Kapp

    Index Scriptorium Estoniae

    Kapp, Tanel

    2006-01-01

    NBA ühest ekstsentrilisemast mängijast, kes on meedia tähelepanu keskmes olnud juba esimesest hooajast peale, ent seda eelkõige oma pöörase käitumise ja koomiliste kommentaaride tõttu. Lisa: Statistika

  14. Shared Agency on Gilbert and deep continuity

    Directory of Open Access Journals (Sweden)

    Smith Thomas H.

    2015-01-01

    Full Text Available I compare Bratman’s theory with Gilbert’s. I draw attention to their ­similarities, query Bratman’s claim that his theory is the more parsimonious, and point to one theoretical advantage of Gilbert’s theory.

  15. Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (3 1 1)A GaAs substrates

    International Nuclear Information System (INIS)

    Rekaya, S.; Sfaxi, L.; Bru-Chevallier, C.; Maaref, H.

    2011-01-01

    InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT) structures were grown by Molecular Beam Epitaxy (MBE) on (3 1 1)A GaAs substrates with different well widths, and studied by photoluminescence (PL) spectroscopy as a function of temperature and excitation density. The PL spectra are dominated by one or two spectral bands, corresponding, respectively, to one or two populated electron sub-bands in the InGaAs quantum well. An enhancement of PL intensity at the Fermi level energy (E F ) in the high-energy tail of the PL peak is clearly observed and associated with the Fermi edge singularity (FES). This is practically detected at the same energy for all samples, in contrast with energy transitions in the InGaAs channel, which are shifted to lower energy with increasing channel thickness. PL spectra at low temperature and low excitation density are used to optically determine the density of the two-dimensional electron gas (2DEG) in the InGaAs channel for different thicknesses. The results show an enhancement of the 2DEG density when the well width increases, in good agreement with our previous theoretical study.

  16. Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

    International Nuclear Information System (INIS)

    Rekaya, S.; Sfaxi, L.; Bouzaiene, L.; Maaref, H.; Bru-Chevallier, C.

    2008-01-01

    The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phenomena, material properties and device applications. The photoluminescence (PL) spectra of the structures have been measured at low temperature. The dominant emission in the PL spectra is due to the recombination from the first electron (e1) subband to the first heavy-hole (hh1) subband (E 11 : e1-hh1). This feature (E 11 ) is a relatively broad peak and has a typical asymmetric line shape. The transformation of the PL spectra in the close vicinity of the Fermi edge (E F ) under different excitation densities gives strong evidence for the Fermi Edge Singularity (FES) existence. The density of the quasi-two-dimensional electron gas (2DEG) determined by PL study (n s PL ), is in sufficient agreement with the values found from Hall measurements n s Hall at 77 K. The results prove an increase of the electron density in sample grown on GaAs (111)A and (311)A rather than in equivalent sample grown on (001) GaAs substrate. This effect is in good agreement with our theoretical prediction, which is based on a self-consistent solution of the coupled Schroedinger and Poisson equations

  17. Francis Gilbert * & Samy Zalat Introduction In collaboration with the ...

    African Journals Online (AJOL)

    Francis

    1 School of Biology, University Park, University of Nottingham, Nottingham ... UK is in general very good at scientific research, and why Egypt, in general, is not. The reasons concern the level and distribution method of funding, the way PhD ...

  18. Employee response to harassment by immediate supervisor / Moeti Gilbert Maibi

    OpenAIRE

    Maibi, Moeti Gilbert

    2013-01-01

    Workplace harassment is a major problem in all employment relationships. It has negative implications for employee satisfaction, performance and productivity. This in turn leads to poor organisational performance, and often causes formal grievances and labour disputes which are not in the best interest of the employee or the employer. The constitution of the Republic of South Africa and other related acts like Employment Equity Act (EEA) protect employees against any form of un...

  19. Gilbert's De Magnete: An early study of magnetism and electricity

    Science.gov (United States)

    Malin, Stuart; Barraclough, David

    Four hundred years might seem an excessively long time to wait for a book review, but there are reasons why a prompt review would have been difficult. Not only is De Magnete written in Latin, but it is also in the form of a scientific textbook. The language problem was overcome by Paul Fleury Mottelay and Silvanus P. Thompson, who translated the book into English in 1893 and 1900, respectively. The latter was published in connection with a beautiful tercentenary limited edition by the Chiswick Press that retains much of the flavor and appearance of the original. But the notion of a scientific textbook was unfamiliar when De Magnete first appeared in 1600. Certainly, scientific subjects and even geomagnetism had been written about (for example, by Petrus Peregrinus in his Epistola De Magnete, 1269), but as reports of equipment and phenomena rather than as in-depth investigations of a subject with experimental evidence and interpretation.

  20. NASA Soil Moisture Active Passive Mission Status and Science Performance

    Science.gov (United States)

    Yueh, Simon H.; Entekhabi, Dara; O'Neill, Peggy; Njoku, Eni; Entin, Jared K.

    2016-01-01

    The Soil Moisture Active Passive (SMAP) observatory was launched January 31, 2015, and its L-band radiometer and radar instruments became operational since mid-April 2015. The SMAP radiometer has been operating flawlessly, but the radar transmitter ceased operation on July 7. This paper provides a status summary of the calibration and validation of the SMAP instruments and the quality assessment of its soil moisture and freeze/thaw products. Since the loss of the radar in July, the SMAP project has been conducting two parallel activities to enhance the resolution of soil moisture products. One of them explores the Backus Gilbert optimum interpolation and de-convolution techniques based on the oversampling characteristics of the SMAP radiometer. The other investigates the disaggregation of the SMAP radiometer data using the European Space Agency's Sentinel-1 C-band synthetic radar data to obtain soil moisture products at about 1 to 3 kilometers resolution. In addition, SMAP's L-band data have found many new applications, including vegetation opacity, ocean surface salinity and hurricane ocean surface wind mapping. Highlights of these new applications will be provided.

  1. Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures

    International Nuclear Information System (INIS)

    Galiev, G. B.; Klimov, E. A.; Klochkov, A. N.; Maltsev, P. P.; Pushkarev, S. S.; Zhigalina, O. M.; Imamov, R. M.; Kuskova, A. N.; Khmelenin, D. N.

    2013-01-01

    The influence of the metamorphic buffer design and epitaxial growth conditions on the electrical and structural characteristics of metamorphic In 0.38 Al 0.62 As/In 0.37 Ga 0.63 As/In 0.38 Al 0.62 As high electron mobility transistor (MHEMT) nanoheterostructures has been investigated. The samples were grown on GaAs(100) substrates by molecular beam epitaxy. The active regions of the nanoheterostructures are identical, while the metamorphic buffer In x Al 1−x As is formed with a linear or stepwise (by Δ x = 0.05) increase in the indium content over depth. It is found that MHEMT nanoheterostructures with a step metamorphic buffer have fewer defects and possess higher values of two-dimensional electron gas mobility at T = 77 K. The structures of the active region and metamorphic buffer have been thoroughly studied by transmission electron microscopy. It is shown that the relaxation of metamorphic buffer in the heterostructures under consideration is accompanied by the formation of structural defects of the following types: dislocations, microtwins, stacking faults, and wurtzite phase inclusions several nanometers in size

  2. Opening talk of Didier Houssin, head of the direction of raw materials and hydrocarbons. Talk of Gerard Piketty, head of CEP and M at the CEP and M-COPREP day of October 10, 2000, corresponding to the 50. anniversary of FSH. Talk of Gilbert Rutman head of COPREP; Discours d'ouverture de Didier Houssin Directeur des matieres premieres et des hydrocarbures. Allocation de Gerard Piketty, president du CEP and M a la journee CEP and M-COPREP du 10 octobre 2000, marquant par ailleurs le 50. anniversaire du FSH. Discours de Gilbert Rutman president du COPREP

    Energy Technology Data Exchange (ETDEWEB)

    Houssin, D; Piketty, G [Comite d' Etudes Petrolieres et Marines, 92 - Paris la Defense (France); Rutman, G [COPREP, (France)

    2000-07-01

    These articles report on the different opening talks of D. Housin, G. Piketty and G. Rutman. D. Houssin, head of the direction of raw materials and hydrocarbons, analyzes the main events of the petroleum industry for the year 2000 (oil crisis, oil prices, hydrocarbons market, para-petroleum sector etc..). G. Piketty, head of CEP and M, recalls some highlights of CEP and M's history, while G. Rutman, head of COPREP, briefly evokes the activities of his own technical committee. (J.S.)

  3. Opening talk of Didier Houssin, head of the direction of raw materials and hydrocarbons. Talk of Gerard Piketty, head of CEP and M at the CEP and M-COPREP day of October 10, 2000, corresponding to the 50. anniversary of FSH. Talk of Gilbert Rutman head of COPREP; Discours d'ouverture de Didier Houssin Directeur des matieres premieres et des hydrocarbures. Allocation de Gerard Piketty, president du CEP and M a la journee CEP and M-COPREP du 10 octobre 2000, marquant par ailleurs le 50. anniversaire du FSH. Discours de Gilbert Rutman president du COPREP

    Energy Technology Data Exchange (ETDEWEB)

    Houssin, D.; Piketty, G. [Comite d' Etudes Petrolieres et Marines, 92 - Paris la Defense (France); Rutman, G. [COPREP, (France)

    2000-07-01

    These articles report on the different opening talks of D. Housin, G. Piketty and G. Rutman. D. Houssin, head of the direction of raw materials and hydrocarbons, analyzes the main events of the petroleum industry for the year 2000 (oil crisis, oil prices, hydrocarbons market, para-petroleum sector etc..). G. Piketty, head of CEP and M, recalls some highlights of CEP and M's history, while G. Rutman, head of COPREP, briefly evokes the activities of his own technical committee. (J.S.)

  4. Reliability Investigation of GaN HEMTs for MMICs Applications

    Directory of Open Access Journals (Sweden)

    Alessandro Chini

    2014-08-01

    Full Text Available Results obtained during the evaluation of radio frequency (RF reliability carried out on several devices fabricated with different epi-structure and field-plate geometries will be presented and discussed. Devices without a field-plate structure experienced a more severe degradation when compared to their counterparts while no significant correlation has been observed with respect of the different epi-structure tested. RF stress induced two main changes in the device electrical characteristics, i.e., an increase in drain current dispersion and a reduction in gate-leakage currents. Both of these phenomena can be explained by assuming a density increase of an acceptor trap located beneath the gate contact and in the device barrier layer. Numerical simulations carried out with the aim of supporting the proposed mechanism will also be presented.

  5. GaN-HEMT VSWR Ruggedness and Amplifier Protection

    NARCIS (Netherlands)

    Bengtsson, O.; Bent, G. van der; Rudolph, M.; Würfl, J.; Heijningen, M. van; Vliet, F.E. van

    2010-01-01

    This paper presents the initial results in a study aimed at exploring the use of GaN-devices in applications where they are at risk of being exposed to high output voltage-standing-wave-ratio (VSWR) conditions. A measurement method developed to identify the limits of such stress is described

  6. A flicker noise/IM3 cancellation technique for active mixer using negative impedance

    NARCIS (Netherlands)

    Cheng, W.; Annema, Anne J.; Wienk, Gerhardus J.M.; Nauta, Bram

    2013-01-01

    Abstract—This paper presents an approach to simultaneously cancel flicker noise and IM3 in Gilbert-type mixers, utilizing negative impedances. For proof of concept, two prototype double-balanced mixers in 0.16- m CMOS are fabricated. The first demonstration mixer chip was optimized for full IM3

  7. BOOK REVIEW: Inverse Problems. Activities for Undergraduates

    Science.gov (United States)

    Yamamoto, Masahiro

    2003-06-01

    into the nature of inverse problems and the appropriate mode of thought, chapter 1 offers historical vignettes, most of which have played an essential role in the development of natural science. These vignettes cover the first successful application of `non-destructive testing' by Archimedes (page 4) via Newton's laws of motion up to literary tomography, and readers will be able to enjoy a wide overview of inverse problems. Therefore, as the author asks, the reader should not skip this chapter. This may not be hard to do, since the headings of the sections are quite intriguing (`Archimedes' Bath', `Another World', `Got the Time?', `Head Games', etc). The author embarks on the technical approach to inverse problems in chapter 2. He has elegantly designed each section with a guide specifying course level, objective, mathematical and scientifical background and appropriate technology (e.g. types of calculators required). The guides are designed such that teachers may be able to construct effective and attractive courses by themselves. The book is not intended to offer one rigidly determined course, but should be used flexibly and independently according to the situation. Moreover, every section closes with activities which can be chosen according to the students' interests and levels of ability. Some of these exercises do not have ready solutions, but require long-term study, so readers are not required to solve all of them. After chapter 5, which contains discrete inverse problems such as the algebraic reconstruction technique and the Backus - Gilbert method, there are answers and commentaries to the activities. Finally, scripts in MATLAB are attached, although they can also be downloaded from the author's web page (http://math.uc.edu/~groetsch/). This book is aimed at students but it will be very valuable to researchers wishing to retain a wide overview of inverse problems in the midst of busy research activities. A Japanese version was published in 2002.

  8. Nonlocal torque operators in ab initio theory of the Gilbert damping in random ferromagnetic alloys

    Czech Academy of Sciences Publication Activity Database

    Turek, Ilja; Kudrnovský, Josef; Drchal, Václav

    2015-01-01

    Roč. 92, č. 21 (2015), 214407-1-214407-11 ISSN 1098-0121 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68081723 ; RVO:68378271 Keywords : magnetic damping * spin torque Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  9. Geomagnetic polarity transitions of the Gilbert and Gauss chrons recorded in marine marls from Sicily

    NARCIS (Netherlands)

    van Hoof, A.A.M.

    1993-01-01

    One of the most fascinating phenomena of geophysics is the fact that in the geological past the Earth's magnetic field has frequently reversed its polarity. These polarity transitions are accurately established during at least the past 165 Myr - from their recording in the ocean floor: the marine

  10. Geomagnetic polarity transitions of the Gilbert and Gauss chrons recorded in marine marls from Sicily

    NARCIS (Netherlands)

    Hoof, A.A.M. van

    1993-01-01

    One of the most fascinating phenomena of geophysics is the fact that in the geological past the Earth's magnetic field has frequently reversed its polarity. These polarity transitions are accurately established during at least the past 165 Myr - from their recording in the ocean floor: the

  11. Erratum: Spin dynamics in ferromagnets: Gilbert damping and two-magnon scattering

    Czech Academy of Sciences Publication Activity Database

    Zakeri, Kh.; Lindner, J.; Barsukov, I.; Meckenstock, R.; Farle, M.; von Horsten, U.; Wende, H.; Keune, W.; Rocker, J.; Kalarickal, S.S.; Lenz, K.; Kuch, W.; Baberschke, K.; Frait, Zdeněk

    2009-01-01

    Roč. 80, č. 5 (2009), 059901/1-059901/3 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferromagnetic resonance * Heusler alloys Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009

  12. Ten questions to Gilbert Ruelle: the wind energy, an energy for the 21. century

    International Nuclear Information System (INIS)

    2009-01-01

    The author gives explanations and answers and comments data on issues related to wind energy. He discusses why this energy which is one of the oldest, emerges in the 21. century again, what is its share in electricity production and what it may become, how to compare KWh costs (wind and other sources), what are the other consequences of wind intermittence, whether wind energy is actually a promising way to reduce greenhouse gas emissions, where this energy is growing the fastest, what are the best wind sites, what is the potential of offshore wind facilities, what are the other limits of the wind energy development, whether wind energy has a different behaviour than other generators with respect to network disturbances, what are the selling condition, what is the role of the European Union in the development of solar energy in France

  13. 78 FR 52172 - Don W. Gilbert Hydro Power, LLC; Notice of Availability of Environmental Assessment

    Science.gov (United States)

    2013-08-22

    ... character of the area would reduce visual effects. Avoiding reflective materials and highly-contrasting... stated that the proposed project would not affect any of its trust species (email communication on March... an average low of 10.2 degrees Fahrenheit in January to an [[Page 52180

  14. 75 FR 65663 - Gilbert Eugene Johnson, M.D.; Revocation of Registration

    Science.gov (United States)

    2010-10-26

    ... doctor-patient relationship and a legitimate medical need for the prescription) and directed the employee... practitioner must establish a bona fide doctor-patient relationship in order to act `in the usual course of... patient relationship''; (2) Respondent ``engaged in indiscriminate or excessive prescribing, dispensing or...

  15. New wine in old bottles: the historiography of a paradigm change

    Science.gov (United States)

    Sack, Dorothy

    1992-08-01

    This paper historiographically analyzes the enunciation of the American, systemic-process geomorphology paradigm in the mid-20th century, with particular focus on notions concerning Gilbert and systems. Selected contributions by Strahler, Hack, and Chorley are emphasized because of their influential roles in pronouncing and elaborating process geomorphology. Articulation of the emerging paradigm contributed to the installation of Gilbert as its figurehead and established systems analysis as a fundamental tool. Gilbert was an appropriate figurehead for the new paradigm because he had worked outside of the Davisian paradigm during the Davisian era, had done process geomorphology, had applied the method of systems analysis, and was very well respected. Identifying Gilbert as the archetypal process geomorphologist helped sanction the process paradigm, distance it from Davisian geomorphology, and ease the paradigm change. Strahler's portrayal of Gilbert, however, incorrectly implies that Gilbert had actively advocated process geomorphology in a competition with Davis and the Davisian geographical cycle. Gilbert, Strahler, and Hack each applied the thermodynamically based method of systems analysis to process geomorphology, but Chorley advocated von Bertalanffy's philosophically based general system theory instead. Gilbert, Strahler, and Hack did not apply general system theory to geomorphology, as Chorley suggested they had. Recognizing these and other notions as revisionist aids in recovering a truer understanding of the actual contributions of people important in the history of geomorphology.

  16. Phytochemical investigation of Aloe pulcherrima roots and evaluation for its antibacterial and antiplasmodial activities.

    Science.gov (United States)

    Abdissa, Dele; Geleta, Girma; Bacha, Ketema; Abdissa, Negera

    2017-01-01

    Medicinal plants with documented traditional uses remain an important source for the treatment of a wide range of ailments. Evidence shows that majority of the Ethiopian population are still dependent on traditional medicine. Aloe pulcherrima Gilbert & Sebsebe is one of the endemic Aloe species traditionally used for the treatment of malaria and wound healing in central, Southern and Northern part of Ethiopia. The aim of the current study was, therefore, to isolate active compounds from roots of A. pulcherrima and evaluate for their antibacterial and antiplasmodial activities using standard test strains. Bioassay-guided sequential extraction and column chrom-atographic separation were employed for the isolation of bioactive pure compounds. The structures of the compounds were determined by 1D and 2D NMR spectro-scopic techniques. Disk diffusion method was employed to evaluate the antibacterial activities of the isolated compounds against four bacterial strains specifically (Staphylococcus aureus ATCC 25923, Bacillus subtilis ATCC 6633, Escherichia coli ATCC 35218, Pseudomonas aeruginosa ATCC 27853). The malaria SYBR Green I-based in vitro assay technique was used for in vitro antiplasmodial activity evaluation of the compounds against chloroquine resistant (D6) and -sensitive (W2) strains of P. falciparum. Three compounds, chrysophanol, aloesaponarin I and aloesaponarin II were isolated from the acetone extracts of roots of A. pulcherrima. Evaluation of antibacterial activities revealed that aloesaponarin I and aloesaponarin II had significant activities against all the bacterial strains with inhibition zone diameters ranging from 18-27 mm as compared to the reference drug (gentamicin), which displayed inhibition zone diameter ranging between 20 mm (B. subtilis) and 25 mm (P. aeruginosa). The isolated compounds showed moderate in vitro antiplasmodial activity against both chloroquine resistant (W2) -sensitive (D6) strains. Isolation of chrysophanol, aloesaponarin I

  17. Phytochemical investigation of Aloe pulcherrima roots and evaluation for its antibacterial and antiplasmodial activities.

    Directory of Open Access Journals (Sweden)

    Dele Abdissa

    Full Text Available Medicinal plants with documented traditional uses remain an important source for the treatment of a wide range of ailments. Evidence shows that majority of the Ethiopian population are still dependent on traditional medicine. Aloe pulcherrima Gilbert & Sebsebe is one of the endemic Aloe species traditionally used for the treatment of malaria and wound healing in central, Southern and Northern part of Ethiopia. The aim of the current study was, therefore, to isolate active compounds from roots of A. pulcherrima and evaluate for their antibacterial and antiplasmodial activities using standard test strains. Bioassay-guided sequential extraction and column chrom-atographic separation were employed for the isolation of bioactive pure compounds. The structures of the compounds were determined by 1D and 2D NMR spectro-scopic techniques. Disk diffusion method was employed to evaluate the antibacterial activities of the isolated compounds against four bacterial strains specifically (Staphylococcus aureus ATCC 25923, Bacillus subtilis ATCC 6633, Escherichia coli ATCC 35218, Pseudomonas aeruginosa ATCC 27853. The malaria SYBR Green I-based in vitro assay technique was used for in vitro antiplasmodial activity evaluation of the compounds against chloroquine resistant (D6 and -sensitive (W2 strains of P. falciparum. Three compounds, chrysophanol, aloesaponarin I and aloesaponarin II were isolated from the acetone extracts of roots of A. pulcherrima. Evaluation of antibacterial activities revealed that aloesaponarin I and aloesaponarin II had significant activities against all the bacterial strains with inhibition zone diameters ranging from 18-27 mm as compared to the reference drug (gentamicin, which displayed inhibition zone diameter ranging between 20 mm (B. subtilis and 25 mm (P. aeruginosa. The isolated compounds showed moderate in vitro antiplasmodial activity against both chloroquine resistant (W2 -sensitive (D6 strains. Isolation of chrysophanol

  18. Active Teachers - Active Students

    DEFF Research Database (Denmark)

    as an initiative from the Polytechnic in Nantes, France and the University the Los Andes in Bogota, Colombia. The objective was to start a world wide collaboration allowing teachers in engineering to learn from each other about their experiences with active learning. In this thirteenth edition, ALE joins forces...... with the International Research Symposium on Problem Based Learning (IRSPB) and the International Symposium on Project Approaches in Engineering Education (PAEE) to organise the first International Joint Conference on the Learner in Engineering Education (IJCLEE 2015) hosted by Mondragon University, in San Sebastian...

  19. Is activation analysis still active?

    International Nuclear Information System (INIS)

    Chai Zhifang

    2001-01-01

    This paper reviews some aspects of neutron activation analysis (NAA), covering instrumental neutron activation analysis (INAA), k 0 method, prompt gamma-ray neutron activation analysis (PGNAA), radiochemical neutron activation analysis (RNAA) and molecular activation analysis (MAA). The comparison of neutron activation analysis with other analytical techniques are also made. (author)

  20. Bay-scale population structure in coastal Atlantic cod in Labrador and Newfoundland, Canada

    DEFF Research Database (Denmark)

    Ruzzante, D.E.; Wroblewski, J.S.; Taggart, C.T.

    2000-01-01

    Polymorphisms at five microsatellite DNA loci provide evidence that Atlantic cod Gadus morhua inhabiting Gilbert Bay, Labrador are genetically distinguishable from offshore cod on the north- east Newfoundland shelf and from inshore cod in Trinity Bay, Newfoundland. Antifreeze activity in the blood...... of population structure suggest that important barriers to gene flow exist among five components that include two inshore (Gilbert and Trinity Bay) and three offshore cod aggregations on the north-east Newfoundland Shelf and the Grand Bank. D-A and D-SW estimates of genetic distance that involve Gilbert Bay cod...

  1. Association of human liver bilirubin UDP-glucuronyltransferase activity with a polymorphism in the promoter region of the UGT1A1 gene

    NARCIS (Netherlands)

    Raijmakers, MTM; Jansen, PLM; Steegers, EAP; Peters, WHM

    Background/Aims: Gilbert's syndrome is a benign form of a deficiency in bilirubin glucuronidation. It is associated with a homozygous polymorphism, A(TA)(7)TAA instead of A(TA)(6)TAA, in the TATA-box of the promoter region of the bilirubin UDP-glucuronyltransferase gene. In this study the

  2. Activated Charcoal

    Science.gov (United States)

    Common charcoal is made from peat, coal, wood, coconut shell, or petroleum. “Activated charcoal” is similar to common charcoal, but is made especially for use as a medicine. To make activated charcoal, manufacturers heat common ...

  3. Damping Dependence of Reversal Magnetic Field on Co-based Nano-Ferromagnetic with Thermal Activation

    Directory of Open Access Journals (Sweden)

    Nadia Ananda Herianto

    2015-02-01

    Full Text Available Currently, hard disk development has used HAMR technology that applies heat to perpendicular media until near Curie temperature, then cools it down to room temperature. The use of HAMR technology is significantly influence by Gilbert damping constants. Damping affects the magnetization reversal and coercivity field. Simulation is used to evaluate magnetization reversal by completing Landau-Lifshitz-Gilbert explicit equation. A strong ferromagnetic cobalt based material with size 50×50×20 nm3 is used which parameters are anisotropy materials 3.51×106 erg/cm3, magnetic saturation 5697.5 G, exchange constant 1×10-7 erg/cm, and various Gilbert damping from 0.09 to 0.5. To observe the thermal effect, two schemes are used which are Reduced Barrier Writing and Curie Point Writing. As a result, materials with high damping is able to reverse the magnetizations faster and reduce the energy barrier. Moreover, it can lower the minimum field to start the magnetizations reversal, threshold field, and probability rate. The heating near Curie temperature has succeeded in reducing the reversal field to 1/10 compared to writing process in absence of thermal field.

  4. Active ageing

    Directory of Open Access Journals (Sweden)

    Frode F. Jacobsen

    2017-09-01

    Full Text Available Background: The concept of active ageing has been gaining prominence in the Nordic countries and beyond. This has been reflected in policy papers in Norway and other Nordic nations. Aims: The aim of this article is to analyse the topic of active ageing in five Norwegian White Papers (2002 to 2015 and discuss those policy documents in context of relevant research literature. Methods: A qualitative document analyses is employed focusing on how active ageing, and ageing in general, is described and which concepts are employed. No ethical approval was needed. Findings: The general theme of ageing and the specific theme of active ageing are increasingly prominent in the Norwegian White Papers studied. In all documents, some assumptions regarding ageing and active ageing seem implicit, such as independence being more important than (interdependence. ‘Productive’ activities like participation in working life are stressed, while others, like reading, watching TV or watching children playing in the street, are ignored. Conclusions: The policy documents demonstrate that the topic of active ageing is growing in importance. The documents increasingly seem to stress ‘productive’ activities – those related to working life, voluntary work or sports and physical training. They exclude activities that are meaningful for many older people, like watching their grandchildren play or reading books. Implications for practice: Practitioners in older people’s care could consider reflecting on: Government documents dealing with their own practice The prevalent concept of active ageing The trend of active ageing as a facilitating or hindering factor for good care work How present discourse on active ageing may influence their attitude towards frail older persons How they wish to relate to active ageing in their own practice

  5. Physical Activity

    DEFF Research Database (Denmark)

    Andersen, Lars Bo; Anderssen, Sigmund Alfred; Wisløff, Ulrik

    2014-01-01

    Andersen LB, Anderssen SA, Wisløff U, Hellénius M-L, Fogelholm M, Ekelund U. (Expert Group) Nordic Nutrition Recommendations 2012. Integrating nutrition and physical activity. Chapter: Physical Activity p. 195-217.Nordic Counsil of Ministers.......Andersen LB, Anderssen SA, Wisløff U, Hellénius M-L, Fogelholm M, Ekelund U. (Expert Group) Nordic Nutrition Recommendations 2012. Integrating nutrition and physical activity. Chapter: Physical Activity p. 195-217.Nordic Counsil of Ministers....

  6. Activity report

    International Nuclear Information System (INIS)

    1990-11-01

    The Department of Physics and Measurement Technology, Biology and Chemistry (IFM) presents every year a progress report containing a brief description of activities in research and education within the department. The report is intended as an information for colleagues and institutions. The present report contains activities for the academic year July 1989 to June 1990

  7. [Active euthanasia].

    Science.gov (United States)

    Folker, A P; Hvidt, N

    1995-02-20

    The growing interest in the subject of active euthanasia in connection with the debate regarding legalization of such practices in Denmark necessitates taking a definite standpoint. The difference in concept between active and passive euthanasia is stressed, and the Dutch guidelines are reviewed. The article discusses how far the patient's autonomy should go, as it regards the consideration of self-determination as being too narrow a criterion in itself. The discussion on the quality of life is included, and the consequences of the process of expulsion as a sociological concept are considered--the risk of a patient feeling guilty for being alive and therefore feeling compelled to request active euthanasia. The changed function of the physician is underlined, and it is discussed whether active euthansia will cause a breach of confidence between the physician and his patient. In connection with the debate the following tendencies in society are emphasized: lack of clarity, increasing medicalization and utilitarian priorities.

  8. Active colloids

    International Nuclear Information System (INIS)

    Aranson, Igor S

    2013-01-01

    A colloidal suspension is a heterogeneous fluid containing solid microscopic particles. Colloids play an important role in our everyday life, from food and pharmaceutical industries to medicine and nanotechnology. It is useful to distinguish two major classes of colloidal suspensions: equilibrium and active, i.e., maintained out of thermodynamic equilibrium by external electric or magnetic fields, light, chemical reactions, or hydrodynamic shear flow. While the properties of equilibrium colloidal suspensions are fairly well understood, active colloids pose a formidable challenge, and the research is in its early exploratory stage. One of the most remarkable properties of active colloids is the possibility of dynamic self-assembly, a natural tendency of simple building blocks to organize into complex functional architectures. Examples range from tunable, self-healing colloidal crystals and membranes to self-assembled microswimmers and robots. Active colloidal suspensions may exhibit material properties not present in their equilibrium counterparts, e.g., reduced viscosity and enhanced self-diffusivity, etc. This study surveys the most recent developments in the physics of active colloids, both in synthetic and living systems, with the aim of elucidation of the fundamental physical mechanisms governing self-assembly and collective behavior. (physics of our days)

  9. Transient analysis of electromagnetic wave interactions on ferrite structures using Landau-Lifshitz-Gilbert and volume integral equations

    KAUST Repository

    Sayed, Sadeed Bin

    2015-10-26

    Magnetization of a ferrite can be dynamically tuned using a biasing DC magnetic field. This makes ferrites a good choice of substrate for reconfigurable microwave devices and antenna designs. For example, antenna patterns and resonance frequencies can be shifted by adjusting the biasing DC magnetic field during the operation of the antenna or the device (A. Ustinov et al., Appl. Phys. Lett., 90, (031913), 2007).

  10. Transient analysis of electromagnetic wave interactions on ferrite structures using Landau-Lifshitz-Gilbert and volume integral equations

    KAUST Repository

    Sayed, Sadeed Bin; Ulku, Huseyin Arda; Bagci, Hakan

    2015-01-01

    Magnetization of a ferrite can be dynamically tuned using a biasing DC magnetic field. This makes ferrites a good choice of substrate for reconfigurable microwave devices and antenna designs. For example, antenna patterns and resonance frequencies can be shifted by adjusting the biasing DC magnetic field during the operation of the antenna or the device (A. Ustinov et al., Appl. Phys. Lett., 90, (031913), 2007).

  11. Problemas fundamentales de la ética en Gilbert Hottois; alacances del paradigma bioético

    OpenAIRE

    Célida Godina

    2007-01-01

    En este escrito expongo la ética de G. Hottois y las correspondientes tres vías que propone: hay que hacer todo lo que es posible hacer; no hay que hacer todo lo que es posible hacer; o bien tomar una vía intermedia. Este filósofo observa que la técnica ha extendido de forma extraordinaria nuestro campo de acción y con ello la pregunta ética se ha ampliado también. De ahí que sea indispensable tomar conciencia de cuáles son las consecuencias, incluso las que no podemos ver en nuestro horizont...

  12. Differential Treatment of Pregnancy in Employment: The Impact of General Electric Co. v. Gilbert and Nashville Gas Co. v. Satty.

    Science.gov (United States)

    Taylor, Ellen T.

    1978-01-01

    Supreme Court decisions in two recent court cases concerning Title VII of the Civil Rights Act and the pregnancy of female employees illustrate how stereotyped notions of pregnancy influence perceptions about women's roles in employment. (EB)

  13. Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

    Directory of Open Access Journals (Sweden)

    M. C. Onbasli

    2014-10-01

    Full Text Available Yttrium iron garnet (YIG, Y 3Fe5O12 films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd3Ga5O12 substrates with (100 orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe, near-bulk room temperature saturation moments (∼135 emu cm−3, in-plane easy axis, and damping parameters as low as 2.2 × 10−4. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

  14. Physics activities

    International Nuclear Information System (INIS)

    1997-09-01

    As we move into the 21st Century, nuclear technology is on the verge of rejuvenation in advanced Member States and of expansion in developing Member States. The principal responsibilities of the IAEA are transferring technologies, co-ordinating scientific research, managing specialized projects and maintaining analytical quality control. The IAEA physics activities provide assistance with nuclear instrumentation, promote more effective utilization of research reactors and accelerators, and facilitate global co-operation in nuclear fusion research. These activities will help Member States improve their standards of living through the benefits of nuclear technology. This booklet presents a brief profile on the physics activities and involvement in these fields of the Physics Section, IAEA

  15. Regulatory activities

    International Nuclear Information System (INIS)

    2001-01-01

    This publication, compiled in 8 chapters, presents the regulatory system developed by the Nuclear Regulatory Authority (NRA) of the Argentine Republic. The following activities and developed topics in this document describe: the evolution of the nuclear regulatory activity in Argentina; the Argentine regulatory system; the nuclear regulatory laws and standards; the inspection and safeguards of nuclear facilities; the emergency systems; the environmental systems; the environmental monitoring; the analysis laboratories on physical and biological dosimetry, prenatal irradiation, internal irradiation, radiation measurements, detection techniques on nuclear testing, medical program on radiation protection; the institutional relations with national and international organization; the training courses and meeting; the technical information

  16. Study of Radiation Hardness of Lattice Matched AlInN/GaN HEMT Heterostructures

    Science.gov (United States)

    2016-10-01

    the wedge to a nanomanipulator probe. d- Lifting -out of the wedge from the bulk sample. e- Attachment of a portion of the wedge to one of the silicon...out by subcontractor Scientic, Inc. The exposures were conducted at the Gamma Radiation Facility at NAVSEA Crane division with doses up to ~6 Mrad

  17. Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2018-03-01

    Full Text Available In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc was investigated and it shows that there are different optimal annealing temperatures with different metal thicknesses and pretreatments. The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm with a low annealing temperature. Only the contact resistances of the samples with 130 nm Al layer kept stable and the contact resistances of the samples with 100nm and 160 nm Al layers increased with the measurement temperatures. The contact resistances showed a similar increase and then keep stable trend for all the samples in the long-term 400 °C aging process. The ohmic metal of 20/130/50/50 nm Ti/Al/Ni/Au with ICP etching is the superior candidate considering the contact resistance and reliability.

  18. Recessed insulator and barrier AlGaN/GaN HEMT: A novel structure ...

    Indian Academy of Sciences (India)

    2017-03-08

    Mar 8, 2017 ... AlGaN/GaN high electron mobility transistor; breakdown voltage; output power density; short channel effect ... is an n-type heavily doped Al0.32Ga0.68N while the ..... [15] S E J Mahabadi, A A Orouji, P Keshavarzi and H A.

  19. Thermal Modeling of GaN HEMTs on Sapphire and Diamond

    National Research Council Canada - National Science Library

    Salm, III, Roman P

    2005-01-01

    ... to diamond through the use of commercially available Silvaco software for modeling and simulation. The unparalleled thermal properties of diamond are expected to dramatically decrease device temperatures and increase component lifetimes and reliability.

  20. Transmisor Outphasing en UHF con tecnología GaN HEMT

    OpenAIRE

    Mendiguchia Gutiérrez, Hugo

    2017-01-01

    La evolución hacia nuevas generaciones de sistemas de comunicación inalámbricas, el caso de 4G y 5G en sistemas móviles, ha venido acompañada por un incremento en la eficiencia espectral de los formatos de modulación digital seleccionados. A cambio, la señal paso-banda a transmitir experimenta una variación muy pronunciada en su envolvente, con valores elevados de relación potencia pico a potencia promedio (PAPR de sus siglas en inglés). Entre las arquitecturas más atractivas para una amplifi...

  1. W-band InP based HEMT MMIC low noise amplifiers

    Science.gov (United States)

    Lin, K. Y.; Tang, Y. L.; Wang, H.; Gaier, T.; Gough, R. G.; Sinclair, M.

    2002-01-01

    This paper presents the designs and measurement results of a three-stage and a four-stage W-band monolithic microwave integrated circuits (MMIC) including a three-stage and a four-stage low noise amplifiers.

  2. ZnO HEMTs on Flexible Substrates for Large Area Monolithic Antenna Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — AMBP Tech will implement Zinc Oxide high mobility material technology it has developed specifically for flexible electronics into a direct write process onto large...

  3. Study of Hot-Electron Effects, Breakdown and Reliability in FETS, HEMTS, and HBT’S

    Science.gov (United States)

    1998-08-01

    device (VDS = 7.5 V, VQS = -0.1 V, 137 hrs). (b) Drain Current FT-DLTS measurements in an as received device (open simbols ) and in a device after hot...electron stress test: VDS = 7.5 V, VQS = - 0.1 V, 137 hrs (closed simbols ). output characteristics of degraded devices and completely eliminates

  4. AlGaN/GaN-based HEMT on SiC substrate for microwave ...

    Indian Academy of Sciences (India)

    strength and good thermal stability [1–8]. Apart from this ... In this work, we have considered. Si3N4 and ... of the maximum power by a factor of 3 [12,13]. According ... of the passivation layer might influence device performance [13]. This type of ...

  5. RBS channeling measurement of damage annealing in InAs/AlSb HEMT structures

    International Nuclear Information System (INIS)

    Hallén, Anders; Moschetti, Giuseppe

    2014-01-01

    Electrical isolation of InAs/AlSb high electron mobility transistors has been achieved by the ion implantation isolation technique. The multilayered structures are grown by molecular beam epitaxy on GaAs substrates. The optimal isolation is provided by damaging patterned areas by 100 keV Ar ions implanted at room temperature using fluence of 2 × 10 15 cm −2 , and then annealing the samples in 365 °C for 30 min. The damage build-up and annealing is studied by channeling Rutherford backscattering spectrometry (RBS) and compared to sheet resistance measurements. Only a low level of damage annealing can be seen in RBS for the post-implant annealed samples, but for Ar fluence higher than 2 × 10 14 cm −2 , a strong electrical resistivity increase can still be achieved

  6. Thermal Modeling of GaN HEMTs on Sapphire and Diamond

    National Research Council Canada - National Science Library

    Salm, III, Roman P

    2005-01-01

    Wide bandgap semiconductors have entered into Naval radar use and will eventually replace vacuum tube and conventional solid-state amplifiers for all modern military radar and communications applications. Gallium Nitride (GaN...

  7. Development of Passivation Technology for Improved GaN/AlGaN HEMT Performance and Reliability

    National Research Council Canada - National Science Library

    Abernathy, C. R; Hunter-Edwards, Angela

    2005-01-01

    .... As part of the recipe development we have studied fundamental characteristics of the native oxides on GaN and AlGaN surfaces using XPS and compared the results to oxides generated by exposure to UV...

  8. Conduction, reverse conduction and switching characteristics of GaN E-HEMT

    DEFF Research Database (Denmark)

    Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe

    2015-01-01

    In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using...

  9. InAlGaN/GaN HEMTs at Cryogenic Temperatures

    Directory of Open Access Journals (Sweden)

    Ezgi Dogmus

    2016-06-01

    Full Text Available We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−1 combined with a sheet carrier density of 1.93 × 1013 cm−2 leading to a remarkably low sheet resistance of 44 Ω/□ are measured at 4 K. A strong improvement of Direct current (DC and Radio frequency (RF characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (fT/fmax of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 μm technology confirmed the outstanding 2DEG properties.

  10. Focused Ion Beam Methods for Research and Control of HEMT Fabrication

    Science.gov (United States)

    Pevtsov, E. Ph; Bespalov, A. V.; Demenkova, T. A.; Luchnikov, P. A.

    2017-04-01

    The combination of ion-beam spraying and raster electronic microscopy allows to receive images of sections of defects of the growth nature origin in epitaxial films on GaN basis with nanodimensional permission, to carry out their analysis and classification irrespective of conditions of receiving. Results of application of the specified methods for the analysis of technological operations when forming the microwave transistors are considered: formations of locks, receiving of holes and drawing of contacts.

  11. Saturation of THz detection in InGaAs-based HEMTs: a numerical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Mahi, A. [Centre Universitaire Nour Bachir, B.P. 900, 32000 El Bayadh (Algeria); Palermo, C., E-mail: christophe.palermo@umontpellier.fr [University of Montpellier, IES, UMR 5214, 34000 Montpellier (France); CNRS, IES, UMR 5214, 34000 Montpellier (France); Marinchio, H. [University of Montpellier, IES, UMR 5214, 34000 Montpellier (France); CNRS, IES, UMR 5214, 34000 Montpellier (France); Belgachi, A. [University of Bechar, Bechar 08000 (Algeria); Varani, L. [University of Montpellier, IES, UMR 5214, 34000 Montpellier (France); CNRS, IES, UMR 5214, 34000 Montpellier (France)

    2016-11-01

    By numerical simulations, we investigate the large-signal photoresponse of InGaAs high electron mobility transistors submitted to THz radiations. The used pseudo-2D hydrodynamic model considers electron density and velocity conservations equations. A third equation is solved, in order to describe average energy conservation or to maintain it constantly equal to its thermal equilibrium value. In both cases, the calculated photoresponse increases with the incoming power density for its smallest values. For the higher values, a saturation of the photoresponse is observed, in agreement with experimental results, only when the energy conservation is accounted for. This allows to relate the limitation of the transistor detection features to electron heating phenomenon.

  12. Identity Activities

    Science.gov (United States)

    2016-08-03

    in reaction to their environment. They reflect an individual’s internal or external, conscious or subconscious , overt or covert, voluntary or...identity activities under a range of legal authorities, policy constraints, transnational threats, regional concerns and biases , and most likely...Biography. A baseline and descriptive analytic product that supports the development of the behavioral influences analysis ( BIA ) individual behavioral

  13. Active instruments

    DEFF Research Database (Denmark)

    Lim, Miguel Antonio; Ørberg, Jakob Williams

    2017-01-01

    themselves. We draw on two multi-year field studies of India and Denmark to investigate how national reforms and developments within the ranking industry interact in often surprising ways. Rankings do not always do what policy makers expect. We (1) highlight the activity of rankers in these two countries, (2...

  14. Active house

    DEFF Research Database (Denmark)

    Eriksen, Kurt Emil; Olesen, Gitte Gylling Hammershøj

    Formålet med dette abstrakt er at illustrere, at huse kan være konstrueret til at basere sig udelukkende på vedvarende energikilder og samtidig være CO2-neutrale og producere mere energi end de forbruger. Active House Visionen undersøger disse muligheder i otte demonstration huse i fem forskellige...

  15. Active particles

    CERN Document Server

    Degond, Pierre; Tadmor, Eitan

    2017-01-01

    This volume collects ten surveys on the modeling, simulation, and applications of active particles using methods ranging from mathematical kinetic theory to nonequilibrium statistical mechanics. The contributing authors are leading experts working in this challenging field, and each of their chapters provides a review of the most recent results in their areas and looks ahead to future research directions. The approaches to studying active matter are presented here from many different perspectives, such as individual-based models, evolutionary games, Brownian motion, and continuum theories, as well as various combinations of these. Applications covered include biological network formation and network theory; opinion formation and social systems; control theory of sparse systems; theory and applications of mean field games; population learning; dynamics of flocking systems; vehicular traffic flow; and stochastic particles and mean field approximation. Mathematicians and other members of the scientific commu...

  16. Active solar information dissemination activities

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-07-01

    The principal objective of the project has been the development of an information dissemination strategy for the UK active solar heating industry. The project has also aimed to prepare the industry for the implementation of such a strategy and to produce initial information materials to support the early stages of the implementation process. (author)

  17. Temperature Effects on The Electrical Characteristics of In0.15Ga0.85As Pseudomorphic High-Electron-Mobility Transistors

    Directory of Open Access Journals (Sweden)

    BECHLAGHEM Fatima Zohra

    2017-10-01

    Full Text Available Nowadays, GaAs-based HEMTs and pseudomorphic HEMTs are speedily replacing conventional MESFET technology in military and commercial applications including, communication, radar and automotive technologies having need of high gain, and low noise figures especially at millimeter-wave frequencies. In this work, a short gate length pseudomorphic HEMT "p-HEMT" on GaAs substrate is treated. As temperature dependence study is a very important part of the complete characterization on active devices, the impact of temperature variation on the electrical properties of our 30nm short gate length pseudomorphic high-electron mobility In0.15Ga0.85As device is investigated. All our static DC device characteristics and RF response have been obtained using a device simulator that is Silvaco software to examine temperature impact on our device output current, transconductance and cutoff frequency. The 30nm gate pseudomorphic HEMT reported here exhibit superior DC and RF performances, Our results reveals a maximum drain-source current IDS up to 537.16 mA/mm, a peak extrinsic transconductance Gm of 345.4 mS/mm, a cutoff frequency Ft of 285.9 GHz, and a maximum frequency Fmax of 1580 GHz at room temperature.

  18. Chocolate active

    International Nuclear Information System (INIS)

    Anon.

    1987-01-01

    There is a table of current radioactivity values for various foods and mushrooms. A special accent is on milk and chocolate. Chocolate sorts with more powdered milk are more active. Finally there is a chapter on radionucleides contained in the Chernobyl fallout, other than cesium 137, cesium 134 and strontium 90. The amounts of ruthenium 106, antimony 125, cerium 144, silver 110 m, cesium 134, strontium 90 and plutonium 239 relative to cesium 137 in soil samples in autumn 1987 are given. Special emphasis is on ruthenium 'hot particles' and on plutonium. (qui)

  19. Staying Active: Physical Activity and Exercise

    Science.gov (United States)

    ... Events Advocacy For Patients About ACOG Staying Active: Physical Activity and Exercise Home For Patients Search FAQs Staying ... Exercise FAQ045, November 2016 PDF Format Staying Active: Physical Activity and Exercise Women's Health What are the benefits ...

  20. Halal Activism

    DEFF Research Database (Denmark)

    Fischer, Johan

    2016-01-01

    The purpose of this article is to further our understanding of contemporary Muslim consumer activism in Malaysia with a particular focus on halal (in Arabic, literally “permissible” or “lawful”) products and services. Muslim activists and organisations promote halal on a big scale in the interface...... zones between new forms of Islamic revivalism, the ethnicised state and Muslim consumer culture. Organisations such as the Muslim Consumers Association of Malaysia play an important role in pushing and protecting halal in Malaysia, that is, halal activists constantly call on the state to tighten halal...... in particular historical/national settings and that these issues should be explored in the interfaces between Islam, the state and market. More specifically, this article examines the above issues building on ethnography from fieldwork with three Muslim organisations in Malaysia....

  1. Active sharing

    CERN Multimedia

    2012-01-01

    The big news this week is, of course, the conclusions from the LHC performance workshop held in Chamonix from 6 to 10 February . The main recommendation, endorsed by CERN’s Machine Advisory Committee and adopted by the Management, is that the LHC will run at 4 TeV per beam this year. You can find all the details from Chamonix in the slides presented on Wednesday at the summary session, which leaves me free to talk about another important development coming up soon.   In ten days time, a new kind of gathering will be taking place in Geneva, bringing together two previously separate conferences, one driven by physics, the other by the medical community, but both looking to apply physics to the advancement of health. The merger of the International Conference for Translational Research in Radio-Oncology and CERN’s workshop on Physics for Health in Europe (ICTR-PHE) makes for a very eclectic mix. Presentations range from active shielding for interplanetary flight to the rather...

  2. Active Segmentation.

    Science.gov (United States)

    Mishra, Ajay; Aloimonos, Yiannis

    2009-01-01

    The human visual system observes and understands a scene/image by making a series of fixations. Every fixation point lies inside a particular region of arbitrary shape and size in the scene which can either be an object or just a part of it. We define as a basic segmentation problem the task of segmenting that region containing the fixation point. Segmenting the region containing the fixation is equivalent to finding the enclosing contour- a connected set of boundary edge fragments in the edge map of the scene - around the fixation. This enclosing contour should be a depth boundary.We present here a novel algorithm that finds this bounding contour and achieves the segmentation of one object, given the fixation. The proposed segmentation framework combines monocular cues (color/intensity/texture) with stereo and/or motion, in a cue independent manner. The semantic robots of the immediate future will be able to use this algorithm to automatically find objects in any environment. The capability of automatically segmenting objects in their visual field can bring the visual processing to the next level. Our approach is different from current approaches. While existing work attempts to segment the whole scene at once into many areas, we segment only one image region, specifically the one containing the fixation point. Experiments with real imagery collected by our active robot and from the known databases 1 demonstrate the promise of the approach.

  3. AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

    International Nuclear Information System (INIS)

    Wang, H.T.; Tan, L.S.; Chor, E.F.

    2007-01-01

    Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

  4. IASS Activity

    Science.gov (United States)

    Hojaev, Alisher S.; Ibragimova, Elvira M.

    2015-08-01

    It’s well known, astronomy in Uzbekistan has ancient roots and traditions (e.g., Mirzo Ulugh Beg, Abū al-Rayhān al-Bīrūnī, Abū ‘Abdallāh al-Khwārizmī) and astronomical heritage carefully preserved. Nowadays uzbek astronomers play a key role in scientific research but also in OAD and Decadal Plan activity in the Central Asia region. International Aerospace School (IASS) is an amazing and wonderful event held annually about 30 years. IASS is unique project in the region, and at the beginning we spent the Summer and Winter Schools. At present in the summer camp we gather about 50 teenage and undergraduate students over the country and abroad (France, Malaysia, Turkey, Azerbaijan, Pakistan, Russia, etc.). They are selected on the basis of tests of astronomy and space issues. During two weeks of IASS camp the invited scientists, cosmonauts and astronauts as well as other specialists give lectures and engage in practical exercises with IASS students in astronomy, including daily observations of the Sun and night sky observations with meniscus telescope, space research and exploration, aerospace modelling, preparation and presentation of original projects. This is important that IASS gives not theoretical grounds only but also practically train the students and the hands-on training is the major aims of IASS. Lectures and practice in the field of astronomy carried out with the direct involvement and generous assistance of Uranoscope Association (Paris, France). The current 26-th IASS is planned to held in July 2015.

  5. Activation Energy

    Science.gov (United States)

    Gadeken, Owen

    2002-01-01

    Teaming is so common in today's project management environment that most of us assume it comes naturally. We further assume that when presented with meaningful and challenging work, project teams will naturally engage in productive activity to complete their tasks. This assumption is expressed in the simple (but false) equation: Team + Work = Teamwork. Although this equation appears simple and straightforward, it is far from true for most project organizations whose reality is a complex web of institutional norms based on individual achievement and rewards. This is illustrated by the very first successful team experience from my early Air Force career. As a young lieutenant, I was sent to Squadron Officer School, which was the first in the series of Air Force professional military education courses I was required to complete during my career. We were immediately formed into teams of twelve officers. Much of the course featured competition between these teams. As the most junior member of my team, I quickly observed the tremendous pressure to show individual leadership capability. At one point early in the course, almost everyone in our group was vying to become the team leader. This conflict was so intense that it caused us to fail miserably in our first outdoor team building exercise. We spent so much time fighting over leadership that we were unable to complete any of the events on the outdoor obstacle course. This complete lack of success was so disheartening to me that I gave our team little hope for future success. What followed was a very intense period of bickering, conflict, and even shouting matches as our dysfunctional team tried to cope with our early failures and find some way to succeed. British physician and researcher Wilfred Bion (Experiences in Groups, 1961) discovered that there are powerful psychological forces inherent in all groups that divert from accomplishing their primary tasks. To overcome these restraining forces and use the potential

  6. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Needs for Pregnant or Postpartum Women Physical Activity & Health Adding Physical Activity to Your Life Activities for ... Guide Visual Guide Worksite Physical Activity Steps to Wellness Walkability Audit Tool Sample Audit Glossary Selected References ...

  7. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... for Older Adults Needs for Pregnant or Postpartum Women Physical Activity & Health Adding Physical Activity to Your ... Activity, 2014 Recommendations & Guidelines Fact Sheets & Infographics Social Media Tools Community Strategies BE Active: Connecting Routes + Destinations ...

  8. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Physical Activity Data, Trends and Maps Surveillance Systems Resources & Publications Reports Adults Need More Physical Activity MMWR ... Active: Connecting Routes + Destinations Real-World Examples Implementation Resource Guide Visual Guide Worksite Physical Activity Steps to ...

  9. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Physical Activity Basics Needs for Adults Needs for Children What Counts Needs for Older Adults Needs for ... Adding Physical Activity to Your Life Activities for Children Activities for Older Adults Overcoming Barriers Measuring Physical ...

  10. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... to Your Life Activities for Children Activities for Older Adults Overcoming Barriers ... required by a person to do an activity. When using relative intensity, people pay attention to how physical activity affects their ...

  11. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Adults Need More Physical Activity MMWR Data Highlights State Indicator Report on Physical Activity, 2014 Recommendations & Guidelines ... Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient Malnutrition State and Local Programs Measuring Physical Activity Intensity Recommend ...

  12. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Adults Needs for Children What Counts Needs for Older Adults Needs for Pregnant or Postpartum Women Physical Activity & ... to Your Life Activities for Children Activities for Older Adults Overcoming Barriers Measuring Physical Activity Intensity Target Heart ...

  13. BAM! Physical Activity

    Science.gov (United States)

    ... Smarts Links Fuel Up for Fun Power Packing Physical Activity Activity Calendar Activity Information Sheets I Heard Hurdle ... Links Sleep Game Questions Answered Under the Microscope Physical Activity Game Questions Answered Under the Microscope Lurking in ...

  14. Facts about Physical Activity

    Science.gov (United States)

    ... Micronutrient Malnutrition State and Local Programs Facts about Physical Activity Recommend on Facebook Tweet Share Compartir Some Americans ... Activity Guideline for aerobic activity than older adults. Physical activity and socioeconomic status Adults with more education are ...

  15. Physical Activity Guidelines

    Science.gov (United States)

    ... use this site. health.gov Physical Activity Guidelines Physical Activity Physical activity is key to improving the health of the Nation. Based on the latest science, the Physical Activity Guidelines for Americans is an essential resource for ...

  16. Active knee joint flexibility and sports activity

    DEFF Research Database (Denmark)

    Hahn, Thomas; Foldspang, Anders; Vestergaard, E

    1999-01-01

    was significantly higher in women than in men and significantly positively associated with weekly hours of swimming and weekly hours of competitive gymnastics. Active knee flexion was significantly positively associated with participation in basketball, and significantly negatively associated with age and weekly......The aim of the study was to estimate active knee flexion and active knee extension in athletes and to investigate the potential association of each to different types of sports activity. Active knee extension and active knee flexion was measured in 339 athletes. Active knee extension...... hours of soccer, European team handball and swimming. The results point to sport-specific adaptation of active knee flexion and active knee extension. Udgivelsesdato: 1999-Apr...

  17. Activation analysis. Chapter 4

    International Nuclear Information System (INIS)

    1976-01-01

    The principle, sample and calibration standard preparation, activation by neutrons, charged particles and gamma radiation, sample transport after activation, activity measurement, and chemical sample processing are described for activation analysis. Possible applications are shown of nondestructive activation analysis. (J.P.)

  18. Active transport and heat.

    Science.gov (United States)

    Tait, Peter W

    2011-07-01

    Increasing heat may impede peoples' ability to be active outdoors thus limiting active transport options. Co-benefits from mitigation of and adaptation to global warming should not be assumed but need to be actively designed into strategies.

  19. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... for Older Adults Needs for Pregnant or Postpartum Women Physical Activity & Health Adding Physical Activity to Your ... Physical Activity, 2014 Recommendations & Guidelines Fact Sheets & ... Fitness Club Network Assessing Need and Interest Selecting a DFCN Promotion ...

  20. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... About Physical Activity Data, Trends and Maps Surveillance Systems Resources & Publications Reports Adults Need More Physical Activity MMWR Data Highlights State Indicator Report on Physical Activity, 2014 Recommendations & Guidelines Fact Sheets & Infographics Social Media Tools Community ...

  1. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Needs for Pregnant or Postpartum Women Physical Activity & Health Adding Physical Activity to Your Life Activities for ... Obesity , National Center for Chronic Disease Prevention and Health Promotion Email Recommend Tweet YouTube Instagram Listen Watch ...

  2. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... gov . Physical Activity Physical Activity Basics Needs for Adults Needs for Children What Counts Needs for Older Adults Needs for Pregnant or Postpartum Women Physical Activity & ...

  3. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... an activity. When using relative intensity, people pay attention to how physical activity affects their heart rate ... Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient Malnutrition State and Local Programs File Formats Help: How ...

  4. Physical Activity Basics

    Science.gov (United States)

    ... Weight Breastfeeding Micronutrient Malnutrition State and Local Programs Physical Activity Basics Recommend on Facebook Tweet Share Compartir How much physical activity do you need? Regular physical activity helps improve ...

  5. Physical Activity Assessment

    Science.gov (United States)

    Current evidence convincingly indicates that physical activity reduces the risk of colon and breast cancer. Physical activity may also reduce risk of prostate cancer. Scientists are also evaluating potential relationships between physical activity and other cancers.

  6. Guide to Physical Activity

    Science.gov (United States)

    ... Families ( We Can! ) Health Professional Resources Guide to Physical Activity Physical activity is an important part of your ... to injury. Examples of moderate-intensity amounts of physical activity Common Chores Washing and waxing a car for ...

  7. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    International Nuclear Information System (INIS)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-01-01

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  8. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    Energy Technology Data Exchange (ETDEWEB)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  9. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Physical Activity, 2014 Recommendations & Guidelines Fact Sheets & Infographics Social Media Tools Community Strategies BE Active: Connecting Routes + Destinations Real-World Examples ...

  10. Physical activity and obesity

    National Research Council Canada - National Science Library

    Bouchard, Claude; Katzmarzyk, Peter T

    2010-01-01

    ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 The Physical Activity and Exercise Continuum 7 Darren Warburton Definition of Health, Physical Activity, and Exercise . . . . . . . 7 The Continuum...

  11. Physical Activity and Cancer

    Science.gov (United States)

    ... Cancer Genetics Services Directory Cancer Prevention Overview Research Physical Activity and Cancer On This Page What is physical activity? What is known about the relationship between physical ...

  12. Taking Your Talents to Business Communications: Analyzing Effective Communication through LeBron James's Career Moves

    Science.gov (United States)

    Manisaligil, Alperen; Bilimoria, Diana

    2016-01-01

    We describe an in-class activity that helps students improve their skills in media selection and use to reinforce effective communication. The activity builds on media richness and channel expansion theories through an examination of the media selection and use of NBA athlete LeBron James and Cleveland Cavaliers majority owner Dan Gilbert during…

  13. Criminalisation of Activism

    DEFF Research Database (Denmark)

    Uldam, Julie

    Different forms of political participation involve different challenges. This paper focuses on challenges to radical activism and particularly the criminalisation of activism.......Different forms of political participation involve different challenges. This paper focuses on challenges to radical activism and particularly the criminalisation of activism....

  14. Increasing Youth Physical Activity with Activity Calendars

    Science.gov (United States)

    Eckler, Seth

    2016-01-01

    Physical educators often struggle with ways to get their students to be active beyond the school day. One strategy to accomplish this is the use of physical activity calendars (PACs). The purpose of this article is to support the use of PACs and give practical advice for creating effective PACs.

  15. Active nematic gels as active relaxing solids

    Science.gov (United States)

    Turzi, Stefano S.

    2017-11-01

    I propose a continuum theory for active nematic gels, defined as fluids or suspensions of orientable rodlike objects endowed with active dynamics, that is based on symmetry arguments and compatibility with thermodynamics. The starting point is our recent theory that models (passive) nematic liquid crystals as relaxing nematic elastomers. The interplay between viscoelastic response and active dynamics of the microscopic constituents is naturally taken into account. By contrast with standard theories, activity is not introduced as an additional term of the stress tensor, but it is added as an external remodeling force that competes with the passive relaxation dynamics and drags the system out of equilibrium. In a simple one-dimensional channel geometry, we show that the interaction between nonuniform nematic order and activity results in either a spontaneous flow of particles or a self-organization into subchannels flowing in opposite directions.

  16. Physical Activity During School

    DEFF Research Database (Denmark)

    Østergaard, Lars Domino

    It is important, not only on health grounds, to exercise and to be physically active. In school, physical activities have shown to improve the students’ academic behaviour resulting in improved attention and information processing as well as enhanced coping. To stimulate and motivate students...... to be even more active during school hours further enhancing their academic behaviour, it is important to know when, why and how they are active, and their attitude towards different types of physical activities. Therefore, the aim of this study was to categorize the physical activities attended by students...... during school hours and to elucidate their attitude towards the different types of activities. The data consisted of observations of lessons followed by group interviews. Analyses of the observations revealed six categories of physical activities, varying from mandatory physical activities, activities...

  17. Active regions, ch. 7

    International Nuclear Information System (INIS)

    Martres, M.J.; Bruzek, A.

    1977-01-01

    The solar Active Region is an extremely complex phenomenon comprising a large variety of features (active,region phenomena) in the photosphere, chromosphere and corona. The occurrence of the various active phenomena depends on the phase and state of evolution of the AR; their appearance depends on the radiation used for the observation. The various phenomena are described and illustrated with photographs. Several paragraphs are dedicated to magnetic classification of AR, Mt. Wilson Spot Classification, solar activity indices, and solar activity data publications

  18. Lectures Abandoned: Active Learning by Active Seminars

    DEFF Research Database (Denmark)

    Christensen, Henrik Bærbak; Corry, Aino Vonge

    2012-01-01

    Traditional lecture-based courses are widely criticised for be- ing less eective in teaching. The question is of course what should replace the lectures and various active learning tech- niques have been suggested and studied. In this paper, we report on our experiences of redesigning a software ......- tive seminars as a replacement of traditional lectures, an activity template for the contents of active seminars, an ac- count on how storytelling supported the seminars, as well as reports on our and the students' experiences....

  19. Antifeedant activity of quassinoids.

    Science.gov (United States)

    Leskinen, V; Polonsky, J; Bhatnagar, S

    1984-10-01

    The antifeedant activity of 13 quassinoids of different structural types has been studied against the Mexican bean beetle (Epilachna varivestis Mulsant) 4th instar larvae and the southern armyworm (Spodoptera eridania Crawer) 5th instar larvae. All quassinoids tested displayed significant activity against the Mexican bean beetle and, thus, do not reveal a simple structure-activity relationship. Five quassinoids were active against the southern armyworm. Interestingly, four of these-bruceantin (I), glaucarubinone (VI), isobruceine A (VIII), and simalikalactone D (XI)-possess the required structural features for antineoplastic activity. The noncytotoxic quassin (X) is an exception; it is active against both pests.

  20. Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bagnall, Kevin R.; Wang, Evelyn N. [Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2016-06-15

    Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E{sub 2} high and A{sub 1} (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

  1. Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

    International Nuclear Information System (INIS)

    Bagnall, Kevin R.; Wang, Evelyn N.

    2016-01-01

    Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E_2 high and A_1 (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

  2. 11.9 W output power at 4 GHz from 1 mm AlGaN/GaN HEMT

    NARCIS (Netherlands)

    Krämer, M.C.J.C.M.; Karouta, F.; Kwaspen, J.J.M.; Rudzinski, M.; Larsen, P.K.; Suijker, E.M.; Hek, P.A. de; Rödle, T.; Volokhine, I.; Kaufmann, L.M.F.

    2008-01-01

    A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Hence, it is obvious that breakdown voltages over 160

  3. Comprehensive dynamic on-resistance assessments in GaN-on-Si MIS-HEMTs for power switching applications

    Science.gov (United States)

    Chou, Po-Chien; Hsieh, Ting-En; Cheng, Stone; del Alamo, Jesús A.; Chang, Edward Yi

    2018-05-01

    This study comprehensively analyzed the reliability of trapping and hot-electron effects responsible for the dynamic on-resistance (Ron) of GaN-based metal–insulator–semiconductor high electron mobility transistors. Specifically, this study performed the following analyses. First, we developed the on-the-fly Ron measurement to analyze the effects of traps during stress. With this technique, the faster one (with a pulse period of 20 ms) can characterize the degradation; the transient behavior could be monitored accurately by such short measurement pulse. Then, dynamic Ron transients were investigated under different bias conditions, including combined off state stress conditions, back-gating stress conditions, and semi-on stress conditions, in separate investigations of surface- and buffer-, and hot-electron-related trapping effects. Finally, the experiments showed that the Ron increase in semi-on state is significantly correlated with the high drain voltage and relatively high current levels (compared with the off-state current), involving the injection of greater amount of hot electrons from the channel into the AlGaN/insulator interface and the GaN buffer. These findings provide a path for device engineering to clarify the possible origins for electron traps and to accelerate the development of emerging GaN technologies.

  4. Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Lu, C Y; Chang, E Y; Bahat-Treidel, E; Hilt, O; Lossy, R; Chaturvedi, N; Würfl, J; Tränkle, G

    2010-01-01

    In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate—drain spacing, source—gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices

  5. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    family have (0001) interfaces which bear a surface charge σ0 that results from the polarizations of the two alloys at the interface...function of the Al content of the AlGaN barrier, as well as its thickness (Kocan, 2003; Lenka and Panda , 2011). In my dissertation, the surface...incorporation.” Applied Physics Letters, 71 (1997): 1359. Lenka, T. R., and Panda , A. K.. “Effect of structural parameters of 2DEG and C~V

  6. High-performance CPW MMIC LNA using GaAs-based metamorphic HEMTs for 94-GHz applications

    International Nuclear Information System (INIS)

    Ryu, Keun-Kwan; Kim, Sung-Chan; An, Dan; Rhee, Jin-Koo

    2010-01-01

    In this paper, we report on a high-performance low-noise amplifier (LNA) using metamorphic high-electron-mobility transistor (MHEMT) technology for 94-GHz applications. The 100 nm x 60 μm MHEMT devices for the coplanar MMIC LNA exhibited DC characteristics with a drain current density of 655 mA/mm and an extrinsic transconductance of 720 mS/mm. The current gain cutoff frequency (f T ) and the maximum oscillation frequency (f max ) were 195 GHz and 305 GHz, respectively. Based on this MHEMT technology, coplanar 94-GHz MMIC LNAs were realized, achieving a small signal gain of more than 13 dB between 90 and 100 GHz and a small signal gain of 14.8 dB and a noise figure of 4.7 dB at 94 GHz.

  7. Transport Equations for CAD Modeling of Al(x)Ga(1-x)N/GaN HEMTs

    Science.gov (United States)

    Freeman, Jon C.

    2003-01-01

    BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.

  8. Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

    Science.gov (United States)

    Shostachenko, S. A.; Porokhonko, Y. A.; Zakharchenko, R. V.; Burdykin, M. S.; Ryzhuk, R. V.; Kargin, N. I.; Kalinin, B. V.; Belov, A. A.; Vasiliev, A. N.

    2017-12-01

    This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

  9. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... What's this? Submit Button Our Division About Us Nutrition Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient ... What's this? Submit Button Our Division About Us Nutrition Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient ...

  10. Illicit Activities and Goondagardi

    International Development Research Centre (IDRC) Digital Library (Canada)

    The research analyzes the pathways through which exclusionary urban ... casual labour in construction or small-scale trade activities, etc) and ... PATHWAYS TO ILLICIT ACTIVITIES .... VGG Nagar had become a gambling den for some time.

  11. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Strategies BE Active: Connecting Routes + Destinations Real-World Examples Implementation Resource Guide Visual Guide Worksite Physical Activity ... Implementation Maintaining Interest Needs Assessment Evaluating Success CDC’s Example ... Stairwell Appearance Motivational Signs Installing Music Other ...

  12. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Guidelines Fact Sheets & Infographics Social Media Tools Community Strategies BE Active: Connecting Routes + Destinations Real-World Examples Implementation Resource Guide Visual Guide Worksite Physical Activity Steps ...

  13. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Button Our Division About Us Nutrition Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient Malnutrition State and ... Button Our Division About Us Nutrition Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient Malnutrition State and ...

  14. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Button Our Division About Us Nutrition Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient Malnutrition State and Local ... Button Our Division About Us Nutrition Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient Malnutrition State and Local ...

  15. Family Activities for Fitness

    Science.gov (United States)

    Grosse, Susan J.

    2009-01-01

    This article discusses how families can increase family togetherness and improve physical fitness. The author provides easy ways to implement family friendly activities for improving and maintaining physical health. These activities include: walking, backyard games, and fitness challenges.

  16. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Our Division About Us Nutrition Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient Malnutrition State and Local ... Our Division About Us Nutrition Physical Activity Overweight & Obesity Healthy Weight Breastfeeding Micronutrient Malnutrition State and Local ...

  17. Major operations and activities

    Energy Technology Data Exchange (ETDEWEB)

    Black, D.G.

    1995-06-01

    This section of the 1994 Hanford Site Environmental Report summarizes the major operations and activities on the site. These operations and activities include site management, waste management, environmental restoration and corrective actions, and research and technology development.

  18. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Physical Activity, 2014 Recommendations & Guidelines Fact Sheets & Infographics Social Media Tools Community Strategies BE Active: Connecting Routes + ... Obesity , National Center for Chronic Disease Prevention and Health Promotion Email Recommend Tweet YouTube Instagram Listen Watch ...

  19. Active Marine Station Metadata

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Active Marine Station Metadata is a daily metadata report for active marine bouy and C-MAN (Coastal Marine Automated Network) platforms from the National Data...

  20. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Share Compartir For more help with what counts as aerobic activity, watch this video: Windows Media Player, ... The table below lists examples of activities classified as moderate-intensity or vigorous-intensity based upon the ...

  1. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Compartir For more help with what counts as aerobic activity, watch this video: Windows Media Player, 4: ... ways to understand and measure the intensity of aerobic activity: relative intensity and absolute intensity. Relative Intensity ...

  2. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Data, Trends and Maps Surveillance Systems Resources & Publications Reports Adults Need More Physical Activity MMWR Data Highlights State Indicator Report on Physical Activity, 2014 Recommendations & Guidelines Fact Sheets & ...

  3. Diabetes - keeping active

    Science.gov (United States)

    ... ways to add more activity to your day. Introduction There are many benefits to being active. Staying ... them emails. Take the stairs instead of the elevator. Stand up and move around while making phone ...

  4. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Intensity The amount of energy used by the body per minute of activity. The table below lists ... upon the amount of energy used by the body while doing the activity. Top of Page Moderate ...

  5. Activities for Calculators.

    Science.gov (United States)

    Hiatt, Arthur A.

    1987-01-01

    Ten activities that give learners in grades 5-8 a chance to explore mathematics with calculators are provided. The activity cards involve such topics as odd addends, magic squares, strange projects, and conjecturing rules. (MNS)

  6. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... for a breath. Absolute Intensity The amount of energy used by the body per minute of activity. ... or vigorous-intensity based upon the amount of energy used by the body while doing the activity. ...

  7. Major operations and activities

    International Nuclear Information System (INIS)

    Black, D.G.

    1995-01-01

    This section of the 1994 Hanford Site Environmental Report summarizes the major operations and activities on the site. These operations and activities include site management, waste management, environmental restoration and corrective actions, and research and technology development

  8. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... on this page will be unavailable. For more information about this message, please visit this page: About CDC.gov . Physical Activity Physical Activity Basics Needs for Adults Needs for Children What Counts Needs ...

  9. USAID Activity Locations

    Data.gov (United States)

    US Agency for International Development — The USAID Activities dataset is a snapshot of activities supported by USAID including their geographical locations within countries at the time of the snapshot. The...

  10. Interpretable Active Learning

    OpenAIRE

    Phillips, Richard L.; Chang, Kyu Hyun; Friedler, Sorelle A.

    2017-01-01

    Active learning has long been a topic of study in machine learning. However, as increasingly complex and opaque models have become standard practice, the process of active learning, too, has become more opaque. There has been little investigation into interpreting what specific trends and patterns an active learning strategy may be exploring. This work expands on the Local Interpretable Model-agnostic Explanations framework (LIME) to provide explanations for active learning recommendations. W...

  11. Immunizations: Active vs. Passive

    Science.gov (United States)

    ... Issues Health Issues Health Issues Conditions Injuries & Emergencies Vaccine Preventable Diseases ... Children > Safety & Prevention > Immunizations > Immunizations: Active vs. Passive Safety & ...

  12. Activity-based design

    DEFF Research Database (Denmark)

    Andersen, Peter Bøgh

    2006-01-01

      In many types of activities communicative and material activities are so intertwined that the one cannot be understood without taking the other into account. This is true of maritime and hospital work that are used as examples in the paper. The spatial context of the activity is also important:...... and automatic machinery can replace one another in an activity. It also gives an example of how to use the framework for design....

  13. Active Metamaterials for Terahertz Communication and Imaging

    Science.gov (United States)

    Rout, Saroj

    In recent years there has been significant interest in terahertz (THz) systems mostly due to their unique applications in communication and imaging. One of the primary reason for this resurgence is the use of metamaterials to design THz devices due to lack of natural materials that can respond to this electromagnetic spectrum, the so-called ''THz gap''. Even after years of intense research, THz systems are complex and expensive, unsuitable for mainstream applications. This work focuses on bridging this gap by building all solid-state THz devices for imaging and communication applications in a commercial integrated circuit (IC) technology. One such canonical device is a THz wave modulator that can be used in THz wireless communication devices and as spatial light modulator (SLM) for THz imaging systems. The key contribution of this thesis is a metamaterial based THz wave modulator fabricated in a commercial gallium arsenide (GaAs) process resonant at 0.46 THz using a novel approach of embedding pseudomorphic high electron mobility transistors (pHEMTs) in metamaterial and demonstrate modulation values over 30%, and THz modulation at frequencies up to 10 MHz. Using the THz wave modulator, we fabricated and experimentally demonstrated an all solid-state metamaterial based THz spatial light modulator (SLM) as a 2x2 pixel array operating around 0.46 THz, by raster scanning an occluded metal object in polystyrene using a single-pixel imaging setup. This was an important step towards building an low-voltage (1V), low power, on-chip integrable THz imaging device. Using the characterization result from the THz SLM, we computationally demonstrated a multi-level amplitude shift keying (ASK) terahertz wireless communication system using spatial light modulation instead of traditional voltage mode modulation, achieving higher spectral efficiency for high speed communication. We show two orders of magnitude improvement in symbol error rate (SER) for a degradation of 20 dB in

  14. Ras activation by SOS

    DEFF Research Database (Denmark)

    Iversen, Lars; Tu, Hsiung-Lin; Lin, Wan-Chen

    2014-01-01

    Activation of the small guanosine triphosphatase H-Ras by the exchange factor Son of Sevenless (SOS) is an important hub for signal transduction. Multiple layers of regulation, through protein and membrane interactions, govern activity of SOS. We characterized the specific activity of individual ...

  15. Measurement of Physical Activity.

    Science.gov (United States)

    Dishman, Rod K.; Washburn, Richard A.; Schoeller, Dale A.

    2001-01-01

    Valid assessment of physical activity must be unobtrusive, practical to administer, and specific about physical activity type, frequency, duration, and intensity. Assessment methods can be categorized according to whether they provide direct or indirect (e.g., self-report) observation of physical activity, body motion, physiological response…

  16. Modeling Patterns of Activities using Activity Curves.

    Science.gov (United States)

    Dawadi, Prafulla N; Cook, Diane J; Schmitter-Edgecombe, Maureen

    2016-06-01

    Pervasive computing offers an unprecedented opportunity to unobtrusively monitor behavior and use the large amount of collected data to perform analysis of activity-based behavioral patterns. In this paper, we introduce the notion of an activity curve , which represents an abstraction of an individual's normal daily routine based on automatically-recognized activities. We propose methods to detect changes in behavioral routines by comparing activity curves and use these changes to analyze the possibility of changes in cognitive or physical health. We demonstrate our model and evaluate our change detection approach using a longitudinal smart home sensor dataset collected from 18 smart homes with older adult residents. Finally, we demonstrate how big data-based pervasive analytics such as activity curve-based change detection can be used to perform functional health assessment. Our evaluation indicates that correlations do exist between behavior and health changes and that these changes can be automatically detected using smart homes, machine learning, and big data-based pervasive analytics.

  17. Heterogeneous Active Matter

    Science.gov (United States)

    Kolb, Thomas; Klotsa, Daphne

    Active systems are composed of self-propelled (active) particles that locally convert energy into motion and exhibit emergent collective behaviors, such as fish schooling and bird flocking. Most works so far have focused on monodisperse, one-component active systems. However, real systems are heterogeneous, and consist of several active components. We perform molecular dynamics simulations of multi-component active matter systems and report on their emergent behavior. We discuss the phase diagram of dynamic states as well as parameters where we see mixing versus segregation.

  18. Active food packaging technologies.

    Science.gov (United States)

    Ozdemir, Murat; Floros, John D

    2004-01-01

    Active packaging technologies offer new opportunities for the food industry, in the preservation of foods. Important active packaging systems currently known to date, including oxygen scavengers, carbon dioxide emitters/absorbers, moisture absorbers, ethylene absorbers, ethanol emitters, flavor releasing/absorbing systems, time-temperature indicators, and antimicrobial containing films, are reviewed. The principle of operation of each active system is briefly explained. Recent technological advances in active packaging are discussed, and food related applications are presented. The effects of active packaging systems on food quality and safety are cited.

  19. Accessibility, activity participation and location of activities

    DEFF Research Database (Denmark)

    Næss, Petter

    2006-01-01

    By investigating relationships between residential location and the availability of facilities, location of activities, trip distances, activity participation and trip frequencies, this paper seeks to contribute to a more detailed and nuanced understanding of the relationships between residential...... location and the amount of daily-life travel in an urban region. The empirical data are from a comprehensive study of residential location and travel in Copenhagen Metropolitan Area. Differences between inner- and outer-area residents in activity frequencies and trip frequencies are modest and partly...... outweigh each other. However, differences in trip distances due to the location of the dwelling relative to concentrations of facilities translate into substantially longer total travelling distances among suburbanites than among inner-city residents....

  20. Developmental Systems Theory and the Person-Oriented Approach. Commentary on: "An Interpretation of Part of Gilbert Gottlieb's Legacy: Developmental Systems Theory Contra Developmental Behavior Genetics"

    Science.gov (United States)

    Bergman, Lars R.

    2015-01-01

    Molenaar's (2015) article concerns Developmental Systems Theory (DST) in relation to behavior genetics and he presents implications of DST for empirical research, especially the need for subject-specific studies. In this commentary, the article is discussed from a broader developmental science perspective, particularly regarded through the lens of…

  1. When the Stars Align: On the Contributions of Gilbert Gottlieb and Peter C. M. Molenaar to Developmental Science Theory and Method

    Science.gov (United States)

    Lerner, Richard M.; Batanova, Milena; Ettekal, Andrea Vest; Hunter, Cristina

    2015-01-01

    When truly spectacular events occur in the performing arts or in team sports, when the sets of artists or athletes respectively creating these events are discussed, a common phrase used in America to explain the "good fortune" that was involved in such unique occurrences is that "the stars aligned." In this commentary on:…

  2. Uso de harina de cabeza de camarón como reemplazo proteico de harina de pescado en dietas balanceadas para juveniles de Totoaba macdonaldi (Gilbert, 1890

    Directory of Open Access Journals (Sweden)

    Luis Daniel Espinosa-Chaurand

    2015-07-01

    Full Text Available En dietas para juveniles de Totoaba macdonaldi (26,3 ± 4,7 g y 13,6 ± 1 cm se evaluó la sustitución proteica parcial de harina de pescado (HP por harinas de cabeza de camarón (HCC, sobre su crecimiento, sobrevivencia, factor de conversión alimenticia (FCA y composición química de tejidos, y el coeficiente de digestibilidad aparente de materia seca (CDA, proteínas (CDAP y lípidos (CDAL de estas dietas. Se utilizó HCC de cabezas enteras deshidratadas al sol (F y HCC de cabezas maceradas y deshidratadas en secador de aire (M. Las dietas fueron isoproteicas (55,5% de proteína cruda, isolipídicas (15% de lípidos e isoenergéticas (4,6 Kcal g-1 remplazando el 0% (dieta control; DC, 15% (F15 y M15 y 30% (F30 y M3ü de la proteína de la HP por la de HCC. Después de 57 días la sobrevivencia con HCC (99.44 ± 1.92% fue mayor que DC (88,89 ± 3,85%. El peso ganado, crecimiento específico en peso (TCE y el consumo total no presentaron diferencias estadísticas (P > 0,05 entre los organismos alimentados con HCC. No obstante, la dieta M30 presentó un promedio mayor en TCE (0,99 ± 0,06 y crecimiento (19,82 ± 1.64 g/pez. La dieta M30 significativamente tuvo la mejor FCA (1,61 ± 0,13 y las más altas CDA (66,18 ± 1,28, CDAP (86,51 ± 0,53 y CDAL (72,29 ± 1,10. Se concluye que la sustitución proteica de HP por HCC en alimento para juveniles de totoabas mejoró los parámetros productivos y los CDAs, obteniéndose mejores resultados con la inclusión de HCC macerada y niveles de sustitución de 30%.

  3. Embryo developmental events and the egg case of the Aleutian skate Bathyraja aleutica (Gilbert) and the Alaska skate Bathyraja parmifera (Bean).

    Science.gov (United States)

    Hoff, G R

    2009-02-01

    Embryo development events were correlated with egg-case changes for the Aleutian skate Bathyraja aleutica and the Alaska skate Bathyraja parmifera. Yolk absorption underwent two phases: that of steady absorption during early development and that of rapid yolk absorption during the final development stages. Total length (L(T)) for 50% of the pre-hatching embryos egg-case jelly disappearance was 92.04 mm (range 81-102 mm) and 99.36 mm (range 81-100 mm) for B. aleutica and B. parmifera, respectively, allowing the inner chamber to open to seawater flow. The tail filament underwent three phases of growth: rapid elongation during early development (70 mm L(T) for both species and the sex ratio was 1:1 well before hatching. Egg cases that were devoid of an ova or developing embryo were c. 5.0 and 6.5% of the egg cases examined for B. aleutica and B. parmifera, respectively. Measurements showed that egg cases containing only egg jelly were smaller in both width and length than those possessing an ova. Embryo stages were punctuated with distinct events that correlated with egg case changes controlling the internal environment of the developing embryo.

  4. Bay-scale population structure in coastal Atlantic cod in Labrador and Newfoundland, Canada

    DEFF Research Database (Denmark)

    Ruzzante, D.E.; Wroblewski, J.S.; Taggart, C.T.

    2000-01-01

    Polymorphisms at five microsatellite DNA loci provide evidence that Atlantic cod Gadus morhua inhabiting Gilbert Bay, Labrador are genetically distinguishable from offshore cod on the north- east Newfoundland shelf and from inshore cod in Trinity Bay, Newfoundland. Antifreeze activity in the bloo...

  5. Radium and uranium

    International Nuclear Information System (INIS)

    Bothwell, R.

    1983-01-01

    This is a history of Eldorado Nuclear Ltd. in its early days and during the Second World War. It outlines the activities of the company's president, Gilbert Labine, and it's agent, Boris Pregel, as well as the Canadian government's role during the war years up until the nationalization of the company in 1944

  6. A novel approach to negative feedback in RX front-ends

    DEFF Research Database (Denmark)

    Vandi, Luca; Andreani, Pietro; Tired, Tobias

    2006-01-01

    A new approach to negative feedback is proposed and applied to active mixer cells based on Gilbert multiplier. The feedback can be exploited in several ways, and different configurations are derived. A dual-loop topology provides a solution for inductor-less broad-band receiver stages. The nature...

  7. Defense Human Resources Activity > PERSEREC

    Science.gov (United States)

    Skip to main content (Press Enter). Toggle navigation Defense Human Resources Activity Search Search Defense Human Resources Activity: Search Search Defense Human Resources Activity: Search Defense Human Resources Activity U.S. Department of Defense Defense Human Resources Activity Overview

  8. NEA activities in 1980. 9. Activity Report

    International Nuclear Information System (INIS)

    1981-01-01

    This report describes the main features of the Agency's work during 1980 and discusses the state and prospects of the nuclear industry in OECD countries. Trends in nuclear power, radiological and environmental impacts of nuclear fuel cycle activities, nuclear safety research and licensing, nuclear law, nuclear development and fuel cycle studies technical co-operation, nuclear science organisation and administration are reviewed

  9. Marine Biology Activities. Ocean Related Curriculum Activities.

    Science.gov (United States)

    Pauls, John

    The ocean affects all of our lives. Therefore, awareness of and information about the interconnections between humans and oceans are prerequisites to making sound decisions for the future. Project ORCA (Ocean Related Curriculum Activities) has developed interdisciplinary curriculum materials designed to meet the needs of students and teachers…

  10. Activated carbon from biomass

    Science.gov (United States)

    Manocha, S.; Manocha, L. M.; Joshi, Parth; Patel, Bhavesh; Dangi, Gaurav; Verma, Narendra

    2013-06-01

    Activated carbon are unique and versatile adsorbents having extended surface area, micro porous structure, universal adsorption effect, high adsorption capacity and high degree of surface reactivity. Activated carbons are synthesized from variety of materials. Most commonly used on a commercial scale are cellulosic based precursors such as peat, coal, lignite wood and coconut shell. Variation occurs in precursors in terms of structure and carbon content. Coir having very low bulk density and porous structure is found to be one of the valuable raw materials for the production of highly porous activated carbon and other important factor is its high carbon content. Exploration of good low cost and non conventional adsorbent may contribute to the sustainability of the environment and offer promising benefits for the commercial purpose in future. Carbonization of biomass was carried out in a horizontal muffle furnace. Both carbonization and activation were performed in inert nitrogen atmosphere in one step to enhance the surface area and to develop interconnecting porosity. The types of biomass as well as the activation conditions determine the properties and the yield of activated carbon. Activated carbon produced from biomass is cost effective as it is easily available as a waste biomass. Activated carbon produced by combination of chemical and physical activation has higher surface area of 2442 m2/gm compared to that produced by physical activation (1365 m2/gm).

  11. Active ageing technologies

    DEFF Research Database (Denmark)

    Lassen, Aske Juul

    In the recent decade the concept of active aging has become important in the Western hemisphere. The World Health Organization and The European Union have staged active aging as a core policy area and initiated programs of physical activity, independence and prolonged working lives among...... the elderly. As part of this rearticulation of old age, many new technologies take form. This paper uses a wide concept of technologies (devices, regimes, strategies and ways of doing) and argues that technologies form active aging subjectivities, and on the other hand, that these subjectivities...... in their socio-material practices form active aging. Hence, active aging is a mutual entanglement (Callon and Rabeharisoa 2004) between technologies, practices and subjectivities. The paper is based on four months of participant observations and 17 in-depth interviews with elderly persons conducted at three...

  12. Mechanics of active surfaces

    Science.gov (United States)

    Salbreux, Guillaume; Jülicher, Frank

    2017-09-01

    We derive a fully covariant theory of the mechanics of active surfaces. This theory provides a framework for the study of active biological or chemical processes at surfaces, such as the cell cortex, the mechanics of epithelial tissues, or reconstituted active systems on surfaces. We introduce forces and torques acting on a surface, and derive the associated force balance conditions. We show that surfaces with in-plane rotational symmetry can have broken up-down, chiral, or planar-chiral symmetry. We discuss the rate of entropy production in the surface and write linear constitutive relations that satisfy the Onsager relations. We show that the bending modulus, the spontaneous curvature, and the surface tension of a passive surface are renormalized by active terms. Finally, we identify active terms which are not found in a passive theory and discuss examples of shape instabilities that are related to active processes in the surface.

  13. Activated recombinant adenovirus proteinases

    Science.gov (United States)

    Anderson, Carl W.; Mangel, Walter F.

    1999-08-10

    This application describes methods and expression constructs for producing activatable recombinant adenovirus proteinases. Purified activatable recombinant adenovirus proteinases and methods of purification are described. Activated adenovirus proteinases and methods for obtaining activated adenovirus proteinases are further included. Isolated peptide cofactors of adenovirus proteinase activity, methods of purifying and identifying said peptide cofactors are also described. Antibodies immunoreactive with adenovirus proteinases, immunospecific antibodies, and methods for preparing them are also described. Other related methods and materials are also described.

  14. Optimizing Active Cyber Defense

    OpenAIRE

    Lu, Wenlian; Xu, Shouhuai; Yi, Xinlei

    2016-01-01

    Active cyber defense is one important defensive method for combating cyber attacks. Unlike traditional defensive methods such as firewall-based filtering and anti-malware tools, active cyber defense is based on spreading "white" or "benign" worms to combat against the attackers' malwares (i.e., malicious worms) that also spread over the network. In this paper, we initiate the study of {\\em optimal} active cyber defense in the setting of strategic attackers and/or strategic defenders. Specific...

  15. Contemporary physical activities

    OpenAIRE

    Tainio, Matti

    2018-01-01

    The customary view of today’s recreational physical activities turns the human movement into a rational practice that is pursued for practical reasons only: for health, vitality, stamina and longevity. This prevalent point of view affects the understanding of the ends, content and quality of physical activities and it creates a bias where the biological, physiological and medical characteristics of physical activities are emphasized while the sensuous, experiential and creative aspects are su...

  16. Zinc triggers microglial activation.

    Science.gov (United States)

    Kauppinen, Tiina M; Higashi, Youichirou; Suh, Sang Won; Escartin, Carole; Nagasawa, Kazuki; Swanson, Raymond A

    2008-05-28

    Microglia are resident immune cells of the CNS. When stimulated by infection, tissue injury, or other signals, microglia assume an activated, "ameboid" morphology and release matrix metalloproteinases, reactive oxygen species, and other proinflammatory factors. This innate immune response augments host defenses, but it can also contribute to neuronal death. Zinc is released by neurons under several conditions in which microglial activation occurs, and zinc chelators can reduce neuronal death in animal models of cerebral ischemia and neurodegenerative disorders. Here, we show that zinc directly triggers microglial activation. Microglia transfected with a nuclear factor-kappaB (NF-kappaB) reporter gene showed a severalfold increase in NF-kappaB activity in response to 30 microm zinc. Cultured mouse microglia exposed to 15-30 microm zinc increased nitric oxide production, increased F4/80 expression, altered cytokine expression, and assumed the activated morphology. Zinc-induced microglial activation was blocked by inhibiting NADPH oxidase, poly(ADP-ribose) polymerase-1 (PARP-1), or NF-kappaB activation. Zinc injected directly into mouse brain induced microglial activation in wild-type mice, but not in mice genetically lacking PARP-1 or NADPH oxidase activity. Endogenous zinc release, induced by cerebral ischemia-reperfusion, likewise induced a robust microglial reaction, and this reaction was suppressed by the zinc chelator CaEDTA. Together, these results suggest that extracellular zinc triggers microglial activation through the sequential activation of NADPH oxidase, PARP-1, and NF-kappaB. These findings identify a novel trigger for microglial activation and a previously unrecognized mechanism by which zinc may contribute to neurological disorders.

  17. Measuring Physical Activity Intensity

    Medline Plus

    Full Text Available ... Healthy Weight Breastfeeding Micronutrient Malnutrition State and Local Programs Measuring Physical Activity Intensity Recommend on Facebook Tweet Share Compartir For more help with what ...

  18. Active Photonic Crystal Waveguides

    DEFF Research Database (Denmark)

    Ek, Sara

    This thesis deals with the fabrication and characterization of active photonic crystal waveguides, realized in III-V semiconductor material with embedded active layers. The platform offering active photonic crystal waveguides has many potential applications. One of these is a compact photonic...... due to photonic crystal dispersion. The observations are explained by the enhancement of net gain by light slow down. Another application based on active photonic crystal waveguides is micro lasers. Measurements on quantum dot micro laser cavities with different mirror configurations and photonic...

  19. CDBG Economic Development Activity

    Data.gov (United States)

    Department of Housing and Urban Development — CDBG activity related to economic development, including commercial or industrial rehab, commercial or industrial land acquisition, commercial or industrial...

  20. Automatic NAA. Saturation activities

    International Nuclear Information System (INIS)

    Westphal, G.P.; Grass, F.; Kuhnert, M.

    2008-01-01

    A system for Automatic NAA is based on a list of specific saturation activities determined for one irradiation position at a given neutron flux and a single detector geometry. Originally compiled from measurements of standard reference materials, the list may be extended also by the calculation of saturation activities from k 0 and Q 0 factors, and f and α values of the irradiation position. A systematic improvement of the SRM approach is currently being performed by pseudo-cyclic activation analysis, to reduce counting errors. From these measurements, the list of saturation activities is recalculated in an automatic procedure. (author)