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Sample records for helium ion implantation

  1. Determination of migration of ion-implanted helium in silica by proton backscattering spectrometry

    International Nuclear Information System (INIS)

    Szakacs, G.; Szilagyi, E.; Paszti, F.; Kotai, E.

    2008-01-01

    Understanding the processes caused by ion implantation of light ions in dielectric materials such as silica is important for developing the diagnostic systems used in fusion and fission environments. Recently, it has been shown that ion-implanted helium is able to escape from SiO 2 films. To study this process in details, helium was implanted into the central part of a buried SiO 2 island up to a fluence of 4 x 10 17 He/cm 2 . The implanted helium could be detected in the SiO 2 island, if the oxide was insulated properly from the vacuum. The shape of the helium depth distributions was far from SRIM simulation because helium distributed in the whole 1 μm thick oxide layer. After the ion implantation, helium was observed only on the implanted spot. After nine months the implanted helium filled out the whole oxide island as it was expected from the high diffusivity

  2. Influence of ion implanted helium on deuterium trapping in Kh18N10T stainless steel

    International Nuclear Information System (INIS)

    Tolstolutskaya, G.D.; Ruzhitskij, V.V.; Kopanets, I.E.

    2004-01-01

    The results are presented on evolution of distribution profiles and helium and deuterium thermal desorption ion implanted in steel 18Cr10NiTi. Accumulation, trapping, retention and microstructure evolution are studied; effect helium and hydrogen simultaneous implantation on these processes is also studied

  3. Determination of migration of ion-implanted helium in silica by proton backscattering spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Szakacs, G. [KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest (Hungary); Szilagyi, E. [KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest (Hungary)], E-mail: szilagyi@rmki.kfki.hu; Paszti, F.; Kotai, E. [KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest (Hungary)

    2008-04-15

    Understanding the processes caused by ion implantation of light ions in dielectric materials such as silica is important for developing the diagnostic systems used in fusion and fission environments. Recently, it has been shown that ion-implanted helium is able to escape from SiO{sub 2} films. To study this process in details, helium was implanted into the central part of a buried SiO{sub 2} island up to a fluence of 4 x 10{sup 17} He/cm{sup 2}. The implanted helium could be detected in the SiO{sub 2} island, if the oxide was insulated properly from the vacuum. The shape of the helium depth distributions was far from SRIM simulation because helium distributed in the whole 1 {mu}m thick oxide layer. After the ion implantation, helium was observed only on the implanted spot. After nine months the implanted helium filled out the whole oxide island as it was expected from the high diffusivity.

  4. Relation between the conditions of helium ion implantation and helium void equilibrium parameters

    International Nuclear Information System (INIS)

    Neklyudov, I.M.; Rybalko, V.F.; Ruzhitskij, V.V.; Tolstolutskaya, G.D.

    1981-01-01

    The conditions of helium thermodynamic equilibrium in a system of voids produced by helium ion bombardment of a metal sample are studied. As an initial equation for description of the equilibrium the Clapeyron equation was used. The equation is obtained relating basic parameters of helium voids (average diameter and density) to irradiation parameters (dose, ion energy (straggling)) and properties of the metal (surface tension coefficient, yield strength). Comparison of the calculations with experimental data on helium in nickel found in literature shows that the equation yields satisfactory resutls for the dose range 1.10 16 -1x10 17 cm -2 and temperatures T [ru

  5. On depth profiling of hydrogen and helium isotopes and its application to ion-implantation studies

    International Nuclear Information System (INIS)

    Boettiger, J.

    1979-01-01

    The thesis is divided into two parts, the first being a general review of the experimental methods for depth profiling of light isotopes, where ion beams are used. In the second part, studies of ion implantation of hydrogen and helium isotopes, applying the techniques discussed in the first part, are described. The paper summarizes recent experimental results and discusses recent developments. (Auth.)

  6. Impact of helium implantation and ion-induced damage on reflectivity of molybdenum mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Carrasco, A., E-mail: alvarogc@kth.se [Department of Fusion Plasma Physics, Royal Institute of Technology (KTH), Teknikringen 31, 100 44 Stockholm (Sweden); Petersson, P.; Hallén, A. [Department of Fusion Plasma Physics, Royal Institute of Technology (KTH), Teknikringen 31, 100 44 Stockholm (Sweden); Grzonka, J. [Faculty of Materials Science and Engineering, Warsaw University of Technology, 02-507 Warsaw (Poland); Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw (Poland); Gilbert, M.R. [Culham Centre for Fusion Energy, Culham Science Centre, Abingdon, Oxon OX14 3DB (United Kingdom); Fortuna-Zalesna, E. [Faculty of Materials Science and Engineering, Warsaw University of Technology, 02-507 Warsaw (Poland); Rubel, M. [Department of Fusion Plasma Physics, Royal Institute of Technology (KTH), Teknikringen 31, 100 44 Stockholm (Sweden)

    2016-09-01

    Molybdenum mirrors were irradiated with Mo and He ions to simulate the effect of neutron irradiation on diagnostic first mirrors in next-generation fusion devices. Up to 30 dpa were produced under molybdenum irradiation leading to a slight decrease of reflectivity in the near infrared range. After 3 × 10{sup 17} cm{sup −2} of helium irradiation, reflectivity decreased by up to 20%. Combined irradiation by helium and molybdenum led to similar effects on reflectivity as irradiation with helium alone. Ion beam analysis showed that only 7% of the implanted helium was retained in the first 40 nm layer of the mirror. The structure of the near-surface layer after irradiation was studied with scanning transmission electron microscopy and the extent and size distribution of helium bubbles was documented. The consequences of ion-induced damage on the performance of diagnostic components are discussed.

  7. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Veen, A. van; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3 He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed

  8. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Science.gov (United States)

    van Veen, A.; Schut, H.; Fedorov, A. V.; Labohm, F.; Neeft, E. A. C.; Konings, R. J. M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2 × 10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  9. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Veen, A. van E-mail: avveen@iri.tudelft.nl; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M

    1999-01-02

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV {sup 3}He ions with doses varying from 10{sup 15} to 10{sup 16} cm{sup -2} and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10{sup 15} cm{sup -2} annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  10. Helium behaviour in UO{sub 2} through low fluence ion implantation studies

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, P., E-mail: philippe.garcia@cea.fr [CEA – DEN/DEC, Bât. 352, 13108 Saint-Paul-Lez-Durance Cedex (France); Gilabert, E. [Centre d’Et' udes Nucleáires de Bordeaux-Gradignan, Le Haut Vigneau, 33175 Gradignan (France); Martin, G.; Carlot, G.; Sabathier, C. [CEA – DEN/DEC, Bât. 352, 13108 Saint-Paul-Lez-Durance Cedex (France); Sauvage, T.; Desgardin, P.; Barthe, M.-F. [CNRS-CEMHTI, UPR3079, 45071 Orleáns (France)

    2014-05-01

    In this work we focus on experiments involving implantation of 500 keV {sup 3}He ions in sintered polycrystalline material. Samples are implanted at low fluences (∼2 ×10{sup 13} ions/cm{sup 2}) and subsequently isothermally annealed in a highly sensitive thermal desorption spectrometry (TDS) device PIAGARA (Plateforme Interdisciplinaire pour l’Analyse des GAz Rares en Aquitaine). The helium fluencies studied are two to three orders of magnitude lower than previous Nuclear Reaction Analysis (NRA) experiments carried out on identical samples implanted at identical energies. The fractional release of helium obtained in the TDS experiments is interpreted using a three-dimensional axisymmetric diffusion model which enables results to be quantitatively compared to previous NRA data. The analysis shows that helium behaviour is qualitatively independent of ion fluency over three orders of magnitude: helium diffusion appears to be strongly inhibited below 1273 K within the centre of the grains presumably as a result of helium bubble precipitation. The scenario involving diffusion at grain boundaries and in regions adjacent to them observed at higher fluencies is quantitatively confirmed at much lower doses. The main difference lies in the average width of the region in which uninhibited diffusion occurs.

  11. Low flux and low energy helium ion implantation into tungsten using a dedicated plasma source

    Energy Technology Data Exchange (ETDEWEB)

    Pentecoste, Lucile [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Thomann, Anne-Lise, E-mail: anne-lise.thomann@univ-orleans.fr [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Melhem, Amer; Caillard, Amael; Cuynet, Stéphane; Lecas, Thomas; Brault, Pascal [GREMI, CNRS/Université d’Orléans, 14 rue d’Issoudun, B.P. 6744, 45067 Orléans Cedex2 (France); Desgardin, Pierre; Barthe, Marie-France [CNRS, UPR3079 CEMHTI, 1D avenue de la Recherche Scientifique, 45071 Orléans Cedex2 (France)

    2016-09-15

    The aim of this work is to investigate the first stages of defect formation in tungsten (W) due to the accumulation of helium (He) atoms inside the crystal lattice. To reach the required implantation conditions, i.e. low He ion fluxes (10{sup 11}–10{sup 14} ions.cm{sup 2}.s{sup −1}) and kinetic energies below the W atom displacement threshold (about 500 eV for He{sup +}), an ICP source has been designed and connected to a diffusion chamber. Implantation conditions have been characterized by means of complementary diagnostics modified for measurements in this very low density helium plasma. It was shown that lowest ion fluxes could only be reached for the discharge working in capacitive mode either in α or γ regime. Special attention was paid to control the energy gained by the ions by acceleration through the sheath at the direct current biased substrate. At very low helium pressure, in α regime, a broad ion energy distribution function was evidenced, whereas a peak centered on the potential difference between the plasma and the biased substrate was found at higher pressures in the γ mode. Polycrystalline tungsten samples were exposed to the helium plasma in both regimes of the discharge and characterized by positron annihilation spectroscopy in order to detect the formed vacancy defects. It was found that W vacancies are able to be formed just by helium accumulation and that the same final implanted state is reached, whatever the operating mode of the capacitive discharge.

  12. Structure and micro-mechanical properties of helium-implanted layer on Ti by plasma-based ion implantation

    International Nuclear Information System (INIS)

    Ma Xinxin; Li Jinlong; Sun Mingren

    2008-01-01

    The present paper concentrates on structure and micro-mechanical properties of the helium-implanted layer on titanium treated by plasma-based ion implantation with a pulsed voltage of -30 kV and doses of 3, 6, 9 and 12 x 10 17 ions/cm 2 , respectively. X-ray photoelectron spectroscopy and transmission electron microscopy are employed to characterize the structure of the implanted layer. The hardnesses at different depths of the layer were measured by nano-indentation. We found that helium ion implantation into titanium leads to the formation of bubbles with a diameter from a few to more than 10 nm and the bubble size increases with the increase of dose. The primary existing form of Ti is amorphous in the implanted layer. Helium implantation also enhances the ingress of O, C and N and stimulates the formations of TiO 2 , Ti 2 O 3 , TiO, TiC and TiN in the near surface layer. And the amount of the ingressed oxygen is obviously higher than those of nitrogen and carbon due to its higher activity. At the near surface layer, the hardnesses of all implanted samples increases remarkably comparing with untreated one and the maximum hardness has an increase by a factor of up to 3.7. For the samples implanted with higher doses of 6, 9 and 12 x 10 17 He/cm 2 , the local displacement bursts are clearly found in the load-displacement curves. For the samples implanted with a lower dose of 3 x 10 17 He/cm 2 , there is no obvious displacement burst found. Furthermore, the burst width increases with the increase of the dose

  13. Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

    Energy Technology Data Exchange (ETDEWEB)

    Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V. [Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation); Chesnokov, Yu. M. [National Research Centre “Kurchatov Institute” (Russian Federation); Shemukhin, A. A.; Oreshko, A. P. [Moscow State University (Russian Federation)

    2017-03-15

    The surface layers of Si(001) substrates subjected to plasma-immersion implantation of helium ions with an energy of 2–5 keV and a dose of 5 × 10{sup 17} cm{sup –2} have been investigated using high-resolution X-ray reflectivity, Rutherford backscattering, and transmission electron microscopy. The electron density depth profile in the surface layer formed by helium ions is obtained, and its elemental and phase compositions are determined. This layer is found to have a complex structure and consist of an upper amorphous sublayer and a layer with a porosity of 30–35% beneath. It is shown that the porous layer has the sharpest boundaries at a lower energy of implantable ions.

  14. Ion implantation

    International Nuclear Information System (INIS)

    Dearnaley, Geoffrey

    1975-01-01

    First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals

  15. On the blister formation in copper alloys due to the helium ion implantation

    International Nuclear Information System (INIS)

    Moreno, D.; Eliezer, D.

    1997-01-01

    Structural materials in fusion reactors will be exposed to alpha radiation and helium implantation over a broad range of energies. A new approach to the blister-formation phenomenon is discussed by means of the mathematical solution on a uniformly loaded circular plate with clamped edges (circular diaphragm). In the present investigation, it was found that blister formation depends on the mechanical properties of the alloys and the near-surface concentration of the implanted gas, which itself is contingent on the crystallographic orientation by means of the stopping power of the implanted atoms. The reported model is based on the fact that at certain depths from the surface, the pressure in the cavities approaches the yield stress of the metal and blistering starts. The thickness of this thin film depends on the mechanical properties of the specific metal. Once a blister cavity is formed, the deformation of the thin film to form a blister cap depends on the buildup of pressure in the cavity contingent on the implanted dose. For the present model, it is sufficient to say that the thickness of the blister's cap cannot be correlated with the projected range of the implantation, as assumed by other authors. The implanted helium concentration needed to build up enough gas pressure to create a blister at a depth which is close to the projected range is higher by 50 times than the gas helium concentration in the cavity. Experimental results, such as the fact that the blisters have burst at the edge of the circular skin, where the maximum stresses are developed, and the fact that at high implantation energy (large projected range), the bursting of the blisters occurs by multilayer caps, support the present model

  16. Radiation blistering of Nb implanted sequentially with helium ions of different energies (3-500 keV)

    International Nuclear Information System (INIS)

    Guseva, M.I.; Gusev, V.; Krasulin, U.L.; Martinenko, U.V.; Das, S.K.; Kaminsky, M.S.

    1976-01-01

    Cold rolled, polycrystalline niobium samples were irradiated at room temperature with 4 He + ions sequentially at 14 different energies over an energy range from 3 keV--500 keV in steps of 50 keV. The dose for each energy was chosen to give an approximately uniform concentration of helium between the implant depths corresponding to 3 keV and 500 keV. In one set of experiments the irradiations were started at the Kurchatov Institute with 3 keV 4 He + ions and extended up to 80 keV in several steps. Subsequently, the same target area was irradiated with 4 He + ions at Argonne National Laboratory (ANL) starting at 100 keV and increased to 500 keV in steps of 50 keV. Another set of irradiations were started at ANL with 500 keV 4 He + ions and continued with decreasing ion energies to 100 keV. Subsequently, the same area was irradiated at the Kurchatov Institute starting at 80 keV and continued with decreasing ion energies to 3 keV. Both sets of irradiations were completed for two different total doses, 0.5 C cm -2 and 1.0 C cm -2

  17. Helium behaviour in implanted boron carbide

    Directory of Open Access Journals (Sweden)

    Motte Vianney

    2015-01-01

    Full Text Available When boron carbide is used as a neutron absorber in nuclear power plants, large quantities of helium are produced. To simulate the gas behaviour, helium implantations were carried out in boron carbide. The samples were then annealed up to 1500 °C in order to observe the influence of temperature and duration of annealing. The determination of the helium diffusion coefficient was carried out using the 3He(d,p4He nuclear reaction (NRA method. From the evolution of the width of implanted 3He helium profiles (fluence 1 × 1015/cm2, 3 MeV corresponding to a maximum helium concentration of about 1020/cm3 as a function of annealing temperatures, an Arrhenius diagram was plotted and an apparent diffusion coefficient was deduced (Ea = 0.52 ± 0.11 eV/atom. The dynamic of helium clusters was observed by transmission electron microscopy (TEM of samples implanted with 1.5 × 1016/cm2, 2.8 to 3 MeV 4He ions, leading to an implanted slab about 1 μm wide with a maximum helium concentration of about 1021/cm3. After annealing at 900 °C and 1100 °C, small (5–20 nm flat oriented bubbles appeared in the grain, then at the grain boundaries. At 1500 °C, due to long-range diffusion, intra-granular bubbles were no longer observed; helium segregates at the grain boundaries, either as bubbles or inducing grain boundaries opening.

  18. Binding of copper and nickel to cavities in silicon formed by helium ion implantation

    International Nuclear Information System (INIS)

    Myers, S.M.; Follstaedt, D.M.; Bishop, D.M.

    1993-01-01

    Cavities formed in Si by He ion implantation and annealing are shown to be strong traps for Cu and Ni impurities. Experiments utilizing ion-beam analysis and transmission electron microscopy indicate that Cu is trapped at the internal surfaces of cavities up to ∼1 monolayer coverage with a binding energy of 2.2±0.2 eV relative to solution. This is greater than the heat of solution from the precipitated Cu 3 Si phase, determined to be 1.7 eV in agreement with earlier work. Copper at cavity-wall sites is reversibly replaced by H during heating in H 2 gas, indicating the relative stability of the two surface terminations. Initial results for Ni impurities indicate that trapping at cavities is again energetically preferred to silicide formation. The saturation coverage of Ni on the internal surfaces, however, is an order of magnitude smaller for Ni than Cu, consistent with published studies of external-surface adsorption. These results suggest that cavity trapping may getter metallic impurities in Si more effectively than methods based on silicide precipitation

  19. Ion implantation

    International Nuclear Information System (INIS)

    Johnson, E.

    1986-01-01

    It is the purpose of the present paper to give a review of surface alloy processing by ion implantation. However, rather than covering this vast subject as a whole, the survey is confined to a presentation of the microstructures that can be found in metal surfaces after ion implantation. The presentation is limited to alloys processed by ion implantation proper, that is to processes in which the alloy compositions are altered significantly by direct injection of the implanted ions. The review is introduced by a presentation of the processes taking place during development of the fundamental event in ion implantation - the collision cascade, followed by a summary of the various microstructures which can be formed after ion implantation into metals. This is compared with the variability of microstructures that can be achieved by rapid solidification processing. The microstructures are subsequently discussed in the light of the processes which, as the implantations proceed, take place during and immediately after formation of the individual collision cascades. These collision cascades define the volumes inside which individual ions are slowed down in the implanted targets. They are not only centres for vigorous agitation but also the sources for formation of excess concentrations of point defects, which will influence development of particular microstructures. A final section presents a selection of specific structures which have been observed in different alloy systems. (orig./GSCH)

  20. Study of UO2 mechanical behaviour implanted with helium ions using X-ray micro-diffraction and mechanical modeling

    International Nuclear Information System (INIS)

    Ibrahim, Marcelle

    2015-01-01

    In order to study the mechanical behavior of nuclear fuel during direct long term storage, UO 2 polycrystals were implanted with Helium ions at a thin surface layer (1 μm approximately), which leads to stress and strain fields in the layer. Strains were measured, at the grains scale, by X-ray micro-diffraction, using synchrotron radiation (ESRF). Image analysis methods were developed for an automatic analysis of the large number of diffraction patterns. Applying statistical tools to Laue patterns allows an automatic detection of low quality images, and enhances the measurement precision. At low layer thickness, the mechanical interaction between grains can be neglected. At higher thickness, experimental results showed a higher mechanical interaction near grain boundaries that can be modeled using finite elements method. Geostatistical tools were used to quantify these interactions. The swelling and the elastic constants in the implanted layer can be estimated through the measured strains on a large number of grains with different orientations. This work allows the determination of the swelling of nuclear fuel in irradiation conditions, as well as the modification of its elastic properties. (author) [fr

  1. Ion implantation as a method of studying inhomogeneities in superconductors: results for indium films with embedded helium particles

    International Nuclear Information System (INIS)

    Fogel, N.Ya.; Moshenski, A.A.; Dmitrenko, I.M.

    1978-01-01

    The paper considers the applicability of ion implantation into superconductors to investigate inhomogeneity effects on their macroscopic properties. Noble-gas-ion implantation into thin superconducting films is shown to be a unique means of systematically studying these effects in a single sample. Data demonstrating the effect of inhomogeneities on the critical current, Isub(c) in the mixed state and phase-transition smearing in He + -ion-irradiated indium films are presented. First, experimental evidence was obtained to support the Larkin-Ovchinnikov theory which relates Isub(c) and the phase-transition smearing to inhomogeneities of the electron-electron interaction constant g(r) and the electron mean free path (r). Results are presented for parallel critical field anomalies in He-implanted indium films which are due to an implantation-induced anisotropy of xi(t). Changes in the critical parameters for the film resulting from the implantation are compared to structural changes. (Auth.)

  2. Behaviour of helium after implantation in molybdenum

    International Nuclear Information System (INIS)

    Viaud, C.; Maillard, S.; Carlot, G.; Valot, C.; Gilabert, E.; Sauvage, T.; Peaucelle, C.; Moncoffre, N.

    2009-01-01

    This study deals with the behaviour of helium in a molybdenum liner dedicated to the retention of fission products. More precisely this work contributes to evaluate the release of implanted helium when the gas has precipitated into nanometric bubbles close to the free surface. A simple model dedicated to calculate the helium release in such a condition is presented. The specificity of this model lays on the assumption that the gas is in equilibrium with a simple distribution of growing bubbles. This effort is encouraging since the calculated helium release fits an experimental dataset with a set of parameters in good agreement with the literature

  3. Lattice site of helium implanted in Si and diamond

    International Nuclear Information System (INIS)

    Allen, W.R.

    1993-01-01

    Single crystals of silicon and diamond were implanted at 300K with 70 keV 3 He. Ion channeling analyses were executed by application of Rutherford backscattering spectrometry and nuclear reaction analysis. Helium exhibits a non-random lattice site in the channeling angular distributions for silicon and diamond. A major fraction of the implanted He was qualitatively identified to be near to the tetrahedral interstice in both materials

  4. Production of negative helium ions

    International Nuclear Information System (INIS)

    Toledo, A.S. de; Sala, O.

    1977-01-01

    A negative helium ion source using potassium charge exchange vapor has been developed to be used as an injector for the Pelletron accelerator. 3 He and α beam currents of up to 2μA have been extracted with 75% particle transmission through the machine [pt

  5. Lithium concentration dependence of implanted helium retention in lithium silicates

    Energy Technology Data Exchange (ETDEWEB)

    Szocs, D.E., E-mail: szocsd@rmki.kfki.h [KFKI Research Institute for Particle and Nuclear Physics, H-1525 Budapest, P.O. Box 49 (Hungary); Szilagyi, E.; Bogdan, Cs.; Kotai, E. [KFKI Research Institute for Particle and Nuclear Physics, H-1525 Budapest, P.O. Box 49 (Hungary); Horvath, Z.E. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest, P.O. Box 49 (Hungary)

    2010-06-15

    Helium ions of 500 keV were implanted with a fluence of 1.4 x 10{sup 17} ion/cm{sup 2} into various lithium silicates to investigate whether a threshold level of helium retention exists in Li-containing silicate ceramics similar to that found in SiO{sub x} in previous work. The composition and phases of the as prepared lithium silicates were determined by proton backscattering spectrometry (p-BS) and X-ray diffraction (XRD) methods with an average error of {+-}10%. Electrostatic charging of the samples was successfully eliminated by wrapping the samples in Al foil. The amounts of the retained helium within the samples were determined by subtracting the non-implanted spectra from the implanted ones. The experimental results show a threshold in helium retention depending on the Li concentration. Under 20 at.% all He is able to escape from the material; at around 30 at.% nearly half of the He, while over 65 at.% all implanted He is retained. With compositions expressed in SiO{sub 2} volume percentages, a trend similar to those reported of SiO{sub x} previously is found.

  6. Martensitic transformation in helium implanted 316 stainless steel

    International Nuclear Information System (INIS)

    Ishimatsu, Manabu; Tsukuda, Noboru

    1997-01-01

    In order to simulate surface deterioration phenomenon due to particle loading of SUS-316 steel which is one of candidate materials for nuclear fusion reactor vacuum wall structure material, helium ion implanting was conducted at room temperature, 473 K and 573 K. To martensitic phase formed as a results, implantation dose dependence, implanting temperature dependence, and annealing under 1073 K were conducted. Formation of the martensitic phase was suppressed at high implanting temperature. At room temperature implantation, the martensitic phase disappeared at more than 873 K, but at high temperature implantation, it increased abnormally near at 973 K. This showed that deterioration of materials depended extremely upon using temperature and temperature history. (G.K.)

  7. Effect of helium ion bombardment on hydrogen behaviour in stainless steel

    International Nuclear Information System (INIS)

    Guseva, M.I.; Stolyarova, V.G.; Gorbatov, E.A.

    1987-01-01

    The effect of helium ion bombardment on hydrogen behaviour in 12Kh18N10T stainless steel is investigated. Helium and hydrogen ion bombardment was conducted in the ILU-3 ion accelerator; the fluence and energy made up 10 16 -5x10 17 cm -2 , 30 keV and 10 16 -5x10 18 cm -2 , 10 keV respectively. The method of recoil nuclei was used for determination of helium and hydrogen content. Successive implantation of helium and hydrogen ions into 12Kh18N10T stainless steel results in hydrogen capture by defects formed by helium ions

  8. Structure-property and composition-property relationships for poly(ethylene terephthalate) surfaces modified by helium plasma-based ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Toth, A., E-mail: totha@chemres.hu [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary); Veres, M. [Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49 (Hungary); Kereszturi, K.; Mohai, M.; Bertoti, I.; Szepvoelgyi, J. [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary)

    2011-10-01

    The surfaces of untreated and helium plasma-based ion implantation (He PBII) treated poly(ethylene terephthalate) (PET) samples were characterised by reflectance colorimetry, contact angle studies and measurements of surface electrical resistance. The results were related to the structural and compositional data obtained by the authors earlier on parallel samples by XPS and Raman spectroscopy. Inverse correlations between lightness and I{sub D}/I{sub G} ratio and between chroma and I{sub D}/I{sub G} ratio were obtained, suggesting that the PBII-treated PET samples darken and their colourfulness decreases with the increase of the portion of aromatic sp{sup 2} carbon rings in the chemical structure of the modified layer. Direct correlation between water contact angle and the I{sub D}/I{sub G} ratio and inverse correlations between surface energy and I{sub D}/I{sub G} ratio and between dispersive component of surface energy and I{sub D}/I{sub G} ratio were found, reflecting that surface wettability, surface energy and its dispersive component decrease with the formation of surface structure, characterised again by enhanced portion of aromatic sp{sup 2} carbon rings. The surface electrical resistance decreased with the increase of the surface C-content determined by XPS and also with the increase of the surface concentration of conjugated double bonds, reflected by the increase of the {pi} {yields} {pi}* shake-up satellite of the C 1s peak.

  9. Radioactive ions and atoms in superfluid helium

    NARCIS (Netherlands)

    Dendooven, P.G.; Purushothaman, S.; Gloos, K.; Aysto, J.; Takahashi, N.; Huang, W.; Harissopulos, S; Demetriou, P; Julin, R

    2006-01-01

    We are investigating the use of superfluid helium as a medium to handle and manipulate radioactive ions and atoms. Preliminary results on the extraction of positive ions from superfluid helium at temperatures close to 1 K are described. Increasing the electric field up to 1.2 kV/cm did not improve

  10. Optical effects of ion implantation

    International Nuclear Information System (INIS)

    Townsend, P.D.

    1987-01-01

    The review concerns the effects of ion implantation that specifically relate to the optical properties of insulators. Topics which are reviewed include: ion implantation, ion range and damage distributions, colour centre production by ion implantation, high dose ion implantation, and applications for integrated optics. Numerous examples are presented of both diagnostic and industrial examples of ion implantation effects in insulators. (U.K.)

  11. Ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Gusev, V.; Gusevova, M.

    1980-01-01

    The historical development is described of the method of ion implantation, the physical research of the method, its technological solution and practical uses. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material, ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions. (M.S.)

  12. Ion implantation in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, V; Gusevova, M

    1980-06-01

    The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.

  13. Ion implantation into iron

    International Nuclear Information System (INIS)

    Iwaki, Masaya

    1978-01-01

    The distribution of implanted ions in iron, the friction characteristics and the corrosion of iron were studied. The distribution of Ni or Cr ions implanted into mild steel was measured. The accelerated voltage was 150 keV, and the beam current density was about 2 microampere/cm 2 . The measurement was made with an ion microanalyzer. The measured distribution was compared with that of LSS theory. Deep invasion of Ni was seen in the measured distribution. The distribution of Cr ions was different from the distribution calculated by the LSS theory. The relative friction coefficient of mild steel varied according to the dose of implanted Cu or N ions, and to the accelerating voltage. Formation of compound metals on the surfaces of metals by ion-implantation was investigated for the purpose to prevent the corrosion of metals. The resistance of mild steel in which Ni ions were implanted was larger than that of mild steel without any treatment. (Kato, T.)

  14. Neutron-induced helium implantation in GCFR cladding

    International Nuclear Information System (INIS)

    Yamada, H.; Poeppel, R.B.; Sevy, R.H.

    1980-10-01

    The neutron-induced implantation of helium atoms on the exterior surfaces of the cladding of a prototypic gas-cooled fast reactor (GCFR) has been investigated analytically. A flux of recoil helium particles as high as 4.2 x 10 10 He/cm 2 .s at the cladding surface has been calculated at the peak power location in the core of a 300-MWe GCFR. The calculated profile of the helium implantation rates indicates that although some helium is implanted as deep as 20 μm, more than 99% of helium particles are implanted in the first 2-μm-deep layer below the cladding surface. Therefore, the implanted helium particles should mainly affect surface properties of the GCFR cladding

  15. A simple method to produce quasi-simultaneous multiple energy helium implantation

    International Nuclear Information System (INIS)

    Paszti, F.; Fried, M.; Manuaba, A.; Mezey, G.; Kotai, E.; Lohner, T.

    1982-11-01

    If a monoenergetic ion beam is bombarding a target through an absorber foil tilted continuously (i.e. its effective thickness changing continuously), the depth distribution of the implanted ions in the sample depends on the way the absorber is moving. The present paper describes a way of absorber tilting for obtaining a uniform depth distribution and its experimental verification in the case of MeV energy helium ions implanted into aluminium target. (author)

  16. Ion implantation technology

    CERN Document Server

    Downey, DF; Jones, KS; Ryding, G

    1993-01-01

    Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approach

  17. Ion implantation of metals

    International Nuclear Information System (INIS)

    Dearnaley, G.

    1976-01-01

    In this part of the paper descriptions are given of the effects of ion implantation on (a) friction and wear in metals; and (b) corrosion of metals. In the study of corrosion, ion implantation can be used either to introduce a constituent that is known to convey corrosion resistance, or more generally to examine the parameters which control corrosion. (U.K.)

  18. Quantitative ion implantation

    International Nuclear Information System (INIS)

    Gries, W.H.

    1976-06-01

    This is a report of the study of the implantation of heavy ions at medium keV-energies into electrically conducting mono-elemental solids, at ion doses too small to cause significant loss of the implanted ions by resputtering. The study has been undertaken to investigate the possibility of accurate portioning of matter in submicrogram quantities, with some specific applications in mind. The problem is extensively investigated both on a theoretical level and in practice. A mathematical model is developed for calculating the loss of implanted ions by resputtering as a function of the implanted ion dose and the sputtering yield. Numerical data are produced therefrom which permit a good order-of-magnitude estimate of the loss for any ion/solid combination in which the ions are heavier than the solid atoms, and for any ion energy from 10 to 300 keV. The implanted ion dose is measured by integration of the ion beam current, and equipment and techniques are described which make possible the accurate integration of an ion current in an electromagnetic isotope separator. The methods are applied to two sample cases, one being a stable isotope, the other a radioisotope. In both cases independent methods are used to show that the implantation is indeed quantitative, as predicted. At the same time the sample cases are used to demonstrate two possible applications for quantitative ion implantation, viz. firstly for the manufacture of calibration standards for instrumental micromethods of elemental trace analysis in metals, and secondly for the determination of the half-lives of long-lived radioisotopes by a specific activity method. It is concluded that the present study has advanced quantitative ion implantation to the state where it can be successfully applied to the solution of problems in other fields

  19. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials...... are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...... is put on the low-energy implantation of metal ions causing the nucleation and growth of nanoparticles in the shallow polymer layers. Electrical, optical and magnetic properties of metal/polymer composites are under the discussion and the approaches towards practical applications are overviewed....

  20. Ion implantation for microelectronics

    International Nuclear Information System (INIS)

    Dearnaley, G.

    1977-01-01

    Ion implantation has proved to be a versatile and efficient means of producing microelectronic devices. This review summarizes the relevant physics and technology and assesses the advantages of the method. Examples are then given of widely different device structures which have been made by ion implantation. While most of the industrial application has been in silicon, good progress continues to be made in the more difficult field of compound semiconductors. Equipment designed for the industrial ion implantation of microelectronic devices is discussed briefly. (Auth.)

  1. Plasma source ion implantation

    International Nuclear Information System (INIS)

    Conrad, J.R.; Forest, C.

    1986-01-01

    The authors' technique allows the ion implantation to be performed directly within the ion source at higher currents without ion beam extraction and transport. The potential benefits include greatly increased production rates (factors of 10-1000) and the ability to implant non-planar targets without rastering or shadowing. The technique eliminates the ion extractor grid set, beam raster equipment, drift space and target manipulator equipment. The target to be implanted is placed directly within the plasma source and is biased to a large negative potential so that plasma ions gain energy as they accelerate through the potential drop across the sheath that forms at the plasma boundary. Because the sheath surrounds the target on all sides, all surfaces of the target are implanted without the necessity to raster the beam or to rotate the target. The authors have succeeded in implanting nitrogen ions in a silicon target to the depths and concentrations required for surface treatment of materials like stainless steel and titanium alloys. They have performed ESCA measurements of the penetration depth profile of a silicon target that was biased to 30 kV in a nitrogen discharge plasma. Nitrogen ions were implanted to a depth of 700A at a peak concentration of 30% atomic. The measured profile is quite similar to a previously obtained profile in titanium targets with conventional techniques

  2. Ion implantation into diamond

    International Nuclear Information System (INIS)

    Sato, Susumu

    1994-01-01

    The graphitization and the change to amorphous state of diamond surface layer by ion implantation and its characteristics are reported. In the diamond surface, into which more than 10 16 ions/cm 2 was implanted, the diamond crystals are broken, and the structure changes to other carbon structure such as amorphous state or graphite. Accompanying this change of structure, the electric conductivity of the implanted layer shows two discontinuous values due to high resistance and low resistance. This control of structure can be done by the temperature of the base during the ion implantation into diamond. Also it is referred to that by the base temperature during implantation, the mutual change of the structure between amorphous state and graphite can be controlled. The change of the electric resistance and the optical characteristics by the ion implantation into diamond surface, the structural analysis by Raman spectroscopy, and the control of the structure of the implanted layer by the base temperature during implantation are reported. (K.I.)

  3. TEM Characterization of Helium Bubbles in T91 and MNHS Steels Implanted with 200 keV He Ions at Different Temperatures

    International Nuclear Information System (INIS)

    Wang Ji; Gao Xing; Wang Zhi-Guang; Wei Kong-Fang; Yao Cun-Feng; Cui Ming-Huan; Sun Jian-Rong; Li Bing-Sheng; Pang Li-Long; Zhu Ya-Bin; Luo Peng; Chang Hai-Long; Zhang Hong-Peng; Zhu Hui-Ping; Wang Dong; Du Yang-Yang; Xie Er-Qing

    2015-01-01

    Modified novel high silicon steel (MNHS, a newly developed reduced-activation martensitic alloy) and commercial alloy T91 are implanted with 200 keV He"2"+ ions to a dose of 5 × 10"2"0 ions/m"2 at 300, 450 and 550°C. Transmission electron microscopy (TEM) is used to characterize the size and morphology of He bubbles. With the increase of the implantation temperature, TEM observations indicate that bubbles increase in size and the proportion of ‘brick shaped’ cuboid bubbles increases while the proportion of polyhedral bubbles decreases in both the steel samples. For the samples implanted at the same temperature, the average size of He bubbles in MNHS is smaller than that in T91. This might be due to the abundance of boundaries and precipitates in MNHS, which provide additional sites for the trapping of He atoms, thus reduce the susceptibility of MNHS to He embrittlement. (paper)

  4. Ion implantation - an introduction

    International Nuclear Information System (INIS)

    Townsend, P.D.

    1986-01-01

    Ion implantation is a widely used technique with a literature that covers semiconductor production, surface treatments of steels, corrosion resistance, catalysis and integrated optics. This brief introduction outlines advantages of the technique, some aspects of the underlying physics and examples of current applications. Ion implantation is already an essential part of semiconductor technology while in many other areas it is still in an early stage of development. The future scope of the subject is discussed. (author)

  5. Irradiation hardening of Fe–9Cr-based alloys and ODS Eurofer: Effect of helium implantation and iron-ion irradiation at 300 °C including sequence effects

    Energy Technology Data Exchange (ETDEWEB)

    Heintze, C. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Bergner, F., E-mail: f.bergner@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Hernández-Mayoral, M. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Kögler, R.; Müller, G.; Ulbricht, A. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany)

    2016-03-15

    Single-beam, dual-beam and sequential iron- and/or helium-ion irradiations are widely accepted to emulate more application-relevant but hardly accessible irradiation conditions of generation-IV fission and fusion candidate materials for certain purposes such as material pre-selection, identification of basic mechanisms or model calibration. However, systematic investigations of sequence effects capable to critically question individual approaches are largely missing. In the present study, sequence effects of iron-ion irradiations at 300 °C up to 5 dpa and helium implantations up to 100 appm He are investigated by means of post-irradiation nanoindentation of an Fe9%Cr model alloy, ferritic/martensitic 9%Cr steels T91 and Eurofer97 and oxide dispersion strengthened (ODS) Eurofer. Different types of sequence effects, both synergistic and antagonistic, are identified and tentative interpretations are suggested. It is found that different accelerated irradiation approaches have a great impact on the mechanical hardening. This stresses the importance of experimental design in attempts to emulate in-reactor conditions. - Highlights: • The single-beam He-ion implantations do not give rise to significant hardening. • The single-beam Fe-ion irradiations give rise to significant hardening, ΔH{sub Fe}. • Hardening due to sequential He-/Fe-ion irradiation is smaller than ΔH{sub Fe}. • Hardening due to simultaneous He-/Fe-ion irradiation is larger than ΔH{sub Fe}. • The He–Fe synergism for ODS-Eurofer is less pronounced than for Eurofer97.

  6. High energy ion implantation

    International Nuclear Information System (INIS)

    Ziegler, J.F.

    1985-01-01

    High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits, and graded reach-throughs to deep active device components. (orig.)

  7. Backscattered Helium Spectroscopy in the Helium Ion Microscope: Principles, Resolution and Applications

    NARCIS (Netherlands)

    van Gastel, Raoul; Hlawacek, G.; Dutta, S.; Poelsema, Bene

    2015-01-01

    We demonstrate the possibilities and limitations for microstructure characterization using backscattered particles from a sharply focused helium ion beam. The interaction of helium ions with matter enables the imaging, spectroscopic characterization, as well as the nanometer scale modification of

  8. ERDA, RBS, TEM and SEM characterization of microstructural evolution in helium-implanted Hastelloy N alloy

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Jie [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049 (China); Bao, Liangman [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Huang, Hefei, E-mail: huanghefei@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Yan, E-mail: liyan@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Lei, Qiantao [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Institute of Modern Physics, Fudan University, Shanghai 200433 (China); Deng, Qi [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Liu, Zhe; Yang, Guo [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049 (China); Shi, Liqun [Institute of Modern Physics, Fudan University, Shanghai 200433 (China)

    2017-05-15

    Hastelloy N alloy was implanted with 30 keV, 5 × 10{sup 16} ions/cm{sup 2} helium ions at room temperature, and subsequent annealed at 600 °C for 1 h and further annealed at 850 °C for 5 h in vacuum. Using elastic recoil detection analysis (ERDA) and transmission electron microscopy (TEM), the depth profiles of helium concentration and helium bubbles in helium-implanted Hastelloy N alloy were investigated, respectively. The diffusion of helium and molybdenum elements to surface occurred during the vacuum annealing at 850 °C (5 h). It was also observed that bubbles in molybdenum-enriched region were much larger in size than those in deeper region. In addition, it is worth noting that plenty of nano-holes can be observed on the surface of helium-implanted sample after high temperature annealing by scanning electron microscope (SEM). This observation provides the evidence for the occurrence of helium release, which can be also inferred from the results of ERDA and TEM analysis.

  9. Positron and nanoindentation study of helium implanted high chromium ODS steels

    Science.gov (United States)

    Veternikova, Jana Simeg; Fides, Martin; Degmova, Jarmila; Sojak, Stanislav; Petriska, Martin; Slugen, Vladimir

    2017-12-01

    Three oxide dispersion strengthened (ODS) steels with different chromium content (MA 956, MA 957 and ODM 751) were studied as candidate materials for new nuclear reactors in term of their radiation stability. The radiation damage was experimentally simulated by helium ion implantation with energy of ions up to 500 keV. The study was focused on surface and sub-surface structural change due to the ion implantation observed by mostly non-destructive techniques: positron annihilation lifetime spectroscopy and nanoindentation. The applied techniques demonstrated the best radiation stability of the steel ODM 751. Blistering effect occurred due to high implantation dose (mostly in MA 956) was studied in details.

  10. Ion implantation control system

    International Nuclear Information System (INIS)

    Gault, R. B.; Keutzer, L. L.

    1985-01-01

    A control system is disclosed for an ion implantation system of the type in which the wafers to be implanted are mounted around the periphery of a disk which rotates and also moves in a radial direction relative to an ion beam to expose successive sections of each wafer to the radiation. The control system senses beam current which passes through one or more apertures in the disk and is collected by a Faraday cup. This current is integrated to obtain a measure of charge which is compared with a calculated value based upon the desired ion dosage and other parameters. The resultant controls the number of incremental steps the rotating disk moves radially to expose the adjacent sections of each wafer. This process is continued usually with two or more traverses until the entire surface of each wafer has been implanted with the proper ion dosage

  11. Ion implantation in metals

    International Nuclear Information System (INIS)

    Vook, F.L.

    1977-02-01

    The application of ion beams to metals is rapidly emerging as a promising area of research and technology. This report briefly describes some of the recent advances in the modification and study of the basic properties of metals by ion implantation techniques. Most of the research discussed illustrates some of the new and exciting applications of ion beams to metals which are under active investigation at Sandia Laboratories, Albuquerque

  12. Helium ion lithography principles and performance

    NARCIS (Netherlands)

    Drift, E. van der; Maas, D.J.

    2012-01-01

    Recent developments show that Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam diameter is a promising alternative fabrication technique for high-resolution nanostructures at high pattern densities. Key principles and critical conditions of the technique are explained. From

  13. Development of a high current ion implanter

    International Nuclear Information System (INIS)

    Choi, Byung Ho; Kim, Wan; Jin, Jeong Tae

    1990-01-01

    A high current ion implanter of the energy of 100 Kev and the current of about 100 mA has been developed for using the high dose ion implantation, surface modification of steels and ceramics, and ion beam milling. The characteristics of the beam extraction and transportation are investigated. A duoPIGatron ion source compatible with gas ion extraction of about 100 mA, a single gap acceleration tube which is able to compensate the divergence due to the space charge effect, and a beam transport system with the concept of the space charge neutralization are developed for the high current machine. The performance of the constructed machine shows that nitrogen, argon, helium, hydrogen and oxygen ion beams are successfully extracted and transported at a beam divergence due to space charge effect is negligible in the operation pressure of 2 x 10 -5 torr. (author)

  14. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  15. Martensitic transformations in 304 stainless steel after implantation with helium, hydrogen and deuterium

    International Nuclear Information System (INIS)

    Johnson, E.; Grabaek, L.; Johansen, A.; Sarholt-Kristensen, L.; Hayashi, N.; Sakamoto, I.

    1988-01-01

    Using conversion electron Moessbauer spectroscopy (CEMS) and glancing angle X-ray diffraction, martensitic transformations have been studied in type 304 austenitic stainless steels implanted with 8 keV helium, hydrogen and deuterium. Furthermore, using CEMS in the energy selective mode (DCEMS), the distribution of martensite in the implantation zone has been analysed as a function of depth. Transformation of the implanted layer occurs after implantation with 10 21 m -2 He + ions while 100 times higher fluence is required for the implanted layer to transform after hydrogen or deuterium implantations. This difference is due to the ability of helium to form high pressure gas bubbles, while implanted hydrogen is continuously lost by back diffusion to the surface. The helium bubbles, which are confined under pressures as high as 60 GPa, will induce extremely high stress levels in the implanted layer, by which the martensitic transformation is directly induced. The fact that a much higher fluence of hydrogen or deuterium is required to induce the transformation, shows that radiation damage plays only a minor role. In this case, the martensitic transformation first occurs when the implanted layer resembles the state of a cathodically charged surface. (orig.)

  16. Helium sequestration at nanoparticle-matrix interfaces in helium + heavy ion irradiated nanostructured ferritic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Parish, C.M., E-mail: parishcm@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Unocic, K.A.; Tan, L. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Zinkle, S.J. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); University of Tennessee, Knoxville, TN 37996 (United States); Kondo, S. [Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011 (Japan); Snead, L.L. [Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Hoelzer, D.T.; Katoh, Y. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2017-01-15

    We irradiated four ferritic alloys with energetic Fe and He ions: one castable nanostructured alloy (CNA) containing Ti-W-Ta-carbides, and three nanostructured ferritic alloys (NFAs). The NFAs were: 9Cr containing Y-Ti-O nanoclusters, and two Fe-12Cr-5Al NFAs containing Y-Zr-O or Y-Hf-O clusters. All four were subjected to simultaneous dual-beam Fe + He ion implantation (650 °C, ∼50 dpa, ∼15 appm He/dpa), simulating fusion-reactor conditions. Examination using scanning/transmission electron microscopy (STEM) revealed high-number-density helium bubbles of ∼8 nm, ∼10{sup 21} m{sup −3} (CNA), and of ∼3 nm, 10{sup 23} m{sup −3} (NFAs). STEM combined with multivariate statistical analysis data mining suggests that the precipitate-matrix interfaces in all alloys survived ∼50 dpa at 650 °C and serve as effective helium trapping sites. All alloys appear viable structural material candidates for fusion or advanced fission energy systems. Among these developmental alloys the NFAs appear to sequester the helium into smaller bubbles and away from the grain boundaries more effectively than the early-generation CNA.

  17. Biomolecular ions in superfluid helium nanodroplets

    International Nuclear Information System (INIS)

    Gonzalez Florez, Ana Isabel

    2016-01-01

    The function of a biological molecule is closely related to its structure. As a result, understanding and predicting biomolecular structure has become the focus of an extensive field of research. However, the investigation of molecular structure can be hampered by two main difficulties: the inherent complications that may arise from studying biological molecules in their native environment, and the potential congestion of the experimental results as a consequence of the large number of degrees of freedom present in these molecules. In this work, a new experimental setup has been developed and established in order to overcome the afore mentioned limitations combining structure-sensitive gas-phase methods with superfluid helium droplets. First, biological molecules are ionised and brought into the gas phase, often referred to as a clean-room environment, where the species of interest are isolated from their surroundings and, thus, intermolecular interactions are absent. The mass-to-charge selected biomolecules are then embedded inside clusters of superfluid helium with an equilibrium temperature of ∝0.37 K. As a result, the internal energy of the molecules is lowered, thereby reducing the number of populated quantum states. Finally, the local hydrogen bonding patterns of the molecules are investigated by probing specific vibrational modes using the Fritz Haber Institute's free electron laser as a source of infrared radiation. Although the structure of a wide variety of molecules has been studied making use of the sub-Kelvin environment provided by superfluid helium droplets, the suitability of this method for the investigation of biological molecular ions was still unclear. However, the experimental results presented in this thesis demonstrate the applicability of this experimental approach in order to study the structure of intact, large biomolecular ions and the first vibrational spectrum of the protonated pentapeptide leu-enkephalin embedded in helium

  18. Biomolecular ions in superfluid helium nanodroplets

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez Florez, Ana Isabel

    2016-07-01

    The function of a biological molecule is closely related to its structure. As a result, understanding and predicting biomolecular structure has become the focus of an extensive field of research. However, the investigation of molecular structure can be hampered by two main difficulties: the inherent complications that may arise from studying biological molecules in their native environment, and the potential congestion of the experimental results as a consequence of the large number of degrees of freedom present in these molecules. In this work, a new experimental setup has been developed and established in order to overcome the afore mentioned limitations combining structure-sensitive gas-phase methods with superfluid helium droplets. First, biological molecules are ionised and brought into the gas phase, often referred to as a clean-room environment, where the species of interest are isolated from their surroundings and, thus, intermolecular interactions are absent. The mass-to-charge selected biomolecules are then embedded inside clusters of superfluid helium with an equilibrium temperature of ∝0.37 K. As a result, the internal energy of the molecules is lowered, thereby reducing the number of populated quantum states. Finally, the local hydrogen bonding patterns of the molecules are investigated by probing specific vibrational modes using the Fritz Haber Institute's free electron laser as a source of infrared radiation. Although the structure of a wide variety of molecules has been studied making use of the sub-Kelvin environment provided by superfluid helium droplets, the suitability of this method for the investigation of biological molecular ions was still unclear. However, the experimental results presented in this thesis demonstrate the applicability of this experimental approach in order to study the structure of intact, large biomolecular ions and the first vibrational spectrum of the protonated pentapeptide leu-enkephalin embedded in helium

  19. Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Langley, R.A.

    1979-01-01

    The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H/sup +/ beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10/sup 17/ He cm/sup -2/. The blister diameter increased with increasing implant fluence from about 0.8 ..mu..m at 10/sup 18/ He cm/sup -2/ to 5.5 ..mu..m at 3 x 10/sup 18/ He cm/sup -2/.

  20. Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

    International Nuclear Information System (INIS)

    Langley, R.A.

    1979-01-01

    The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H + beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10 17 He cm -2 . The blister diameter increased with increasing implant fluence from about 0.8 μm at 10 18 He cm -2 to 5.5 μm at 3 x 10 18 He cm -2

  1. Ion implantation apparatus

    International Nuclear Information System (INIS)

    Forneris, J.L.; Hicks, W.W.; Keller, J.H.; McKenna, C.M.; Siermarco, J.A.; Mueller, W.F.

    1981-01-01

    The invention relates to ion bombardment or implantation apparatus. It comprises an apparatus for bombarding a target with a beam of ions, including an arrangement for measuring the ion beam current and controlling the surface potential of the target. This comprises a Faraday cage formed, at least in part, by the target and by walls adjacent to, and electrically insulated from, the target and surrounding the beam. There is at least one electron source for supplying electrons to the interior of the Faraday cage and means within the cage for blocking direct rectilinear radiation from the source to the target. The target current is measured and combined with the wall currents to provide a measurement of the ion beam current. The quantity of electrons supplied to the interior of the cage can be varied to control the target current and thereby the target surface potential. (U.K.)

  2. Positron annihilation investigation and nuclear reaction analysis of helium and oxygen-implanted zirconia

    International Nuclear Information System (INIS)

    Grynszpan, R.I.; Saude, S.; Anwand, W.; Brauer, G.

    2005-01-01

    Since irradiation affects in-service properties of zirconia, we investigated the fluence dependence on production and thermal stability of defects induced by helium and oxygen-ion implantation in single crystals of yttria-fully-stabilized zirconia. In either case, depth profiling by slow positron implantation spectroscopy (SPIS) detects a distribution of vacancy-type defects peaking at 60% of the projected ion range R p . Owing to the saturation of positron-trapping occurring for low fluences, which depends on the ion mass, we could estimate a critical size of clusters ranging from 0.4 to 1.6 nm. The lack of SPIS-evidence of an open-volume excess at R p is explained by the presence of over-pressurized gas bubbles. This assumption is confirmed by Nuclear Reaction Analysis of 3 He concentration profiles, which shows that helium remains partly trapped at R p , even after annealing above 400 o C

  3. Depth-dependence recovery of helium-implanted 18 carats gold-silver alloy

    Energy Technology Data Exchange (ETDEWEB)

    Thome, T.; Grynszpan, R.I. [DCE-CTA-LOT, Arcueil (France); Lab. de Chimie Metallurgique des Terres Rares, Thiais (France); Fradin, J. [DCE-CTA-LOT, Arcueil (France); SINUMEF, Ecole Nationale Superieure d' Arts et Metiers, Paris (France); Anwand, W.; Brauer, G. [Forschungszentrum Rossendorf e.V. (FZR), Dresden (Germany)

    2001-07-01

    Helium diffusion in Au{sub 60}Ag{sub 40} is investigated using a variable energy positron beam. The positron diffusion length of the annealed material (66 {+-} 1 nm) is reduced after implantation of 2.2 x 10{sup 14} He ions/cm{sup 2} at 300 keV. During isochronal annealing up to 600 K, the recovery rate of the Doppler broadening lineshape parameter S strongly depends on the distance to the helium implantation peak, indicating an increase of the defect stabilization by He atoms. In contrast, for subsequent annealing, and irrespective of the depth, a maximum in S occurs at 670 K (around 0.5 T{sub m}) resulting from competing processes of growth and breaking up of helium bubbles. (orig.)

  4. Thermal desorption of deuterium from polycrystalline nickel pre-implanted with helium

    International Nuclear Information System (INIS)

    Shi, S.Q.; Abramov, E.; Thompson, D.A.

    1990-01-01

    The thermal desorption technique has been used to study the trapping of deuterium atoms in high-purity polycrystalline nickel pre-implanted with helium for 1 x 10 19 to 5 x 10 20 ions/m 2 . The effect of post-implantation annealing at 703 K and 923 K on the desorption behavior was investigated. Measured values of the total amount of detrapped deuterium (Q T ) and helium concentration were used in a computer simulation of the desorption curve. It was found that the simulation using one or two discrete trap energies resulted in an inadequate fit between the simulated and the measured data. Both experimental and simulation results are explained using a stress-field trapping model. The effective binding energy, E b eff , was estimated to be in the range of 0.4-0.6 eV. Deuterium charging was found to stimulate a release of helium at a relatively low temperature

  5. Helium implantation effects in SAP and aluminum

    International Nuclear Information System (INIS)

    Bauer, W.; Thomas, G.J.

    1976-02-01

    A series of 300 keV He implantations of Al and SAP 930 have been conducted at temperatures between 150 and 773K. The He re-emission was monitored during implantation and the samples were examined with a scanning electron microscope after implantation. Both Al and SAP 930 were found to blister after a critical He dose was reached at temperatures above 473K, both underwent flaking below that temperature, with blistering re-appearing in SAP 930 at an implantation temperature of 150K. The surface deformation and He re-emission are strongly dependent on microstructural effects in the intermediate temperature regime

  6. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  7. Damage, trapping and desorption at the implantation of helium and deuterium in graphite, diamond and silicon carbide

    International Nuclear Information System (INIS)

    Lopez, G.A.R.

    1995-07-01

    The production, thermal stability and structure of ion induced defects have been studied by Rutherford backscattering in channeling geometry for the implantation of helium and deuterium in graphite, diamond and silicon carbide with energies of 8 and 20 keV. At the implantation of deuterium and helium ions more defects were measured in graphite than in diamond or silicon carbide at equal experimental conditions. This is due to increased backscattering in graphite, which is caused by the splitting and tilting of crystallites and a local reordering of lattice atoms around defects. At 300 K, Helium produces more defects in all three materials than deuterium with equal depth distribution of defects. The ratio of the defects produced by helium and deuterium agrees very well with the corresponding ratio of the energy deposited in nuclear collisions. In graphite, only small concentrations of deuterium induced defects anneal below 800 K, while in diamond small concentrations of deuterium as well as of helium induced defects anneal mostly below 800 K. This annealing behavior is considered to be due to recombination of point defects. The buildup of helium and deuterium in graphite is different. The trapping of deuterium proceeds until saturation is reached, while in the case of helium trapping is interrupted by flaking. In diamond, deuterium as well as helium are trapped almost completely until at higher fluences reemission starts and saturation is reached. Two desorption mechanisms were identified for the thermal desorption of helium from base-oriented graphite. Helium implanted at low fluences desorbs diffusing to the surface, while for the implantation of high fluences the release of helium due to blistering dominates. The desorption of deuterium from graphite and diamond shows differences. While in graphite the desorption starts already at 800 K, in diamond up to 1140 K only little desorption can be observed. These differences can be explained by the different transport

  8. Recombination of positive helium ions in gaseous helium

    International Nuclear Information System (INIS)

    Shyu, J.S.

    1988-01-01

    The Wigner-Keck Monte Carlo trajectory method and the resonance complex theory are employed to calculate the rate coefficient k for H e + ions recombining in gaseous helium in the temperature range 80 2 + is obtained from a Morse potential and a long range ion-induced dipole interaction term. The three body He 3 + interaction is represented by an approximate expression which, for practical purpose, depends on the same parameters that determine the two body interaction. Russell had employed the Wigner-Keck Monte Carlo trajectory method to the same reaction. Unlike his calculation, in which the final quasibound states are treated as continuous, we apply the JWKB approximation to quantize those quasibound states. Both the values of k, calculated from two different quasibound state treatments, are found to be very close and give good agreement with experimental results obtained by Biondi, although they are still 10% to 20% lower than the experimental results. The resonance complex theory, developed by Roberts et al, is then employed to investigated de-excitation from the highest quasibound state, which can be populated by inward tunneling through the rotational (centrifugal) barrier. It is found that this strongly supports a suggestion proposed by Russell. He had suggested that the remaining difference between the Wigner-Keck method and experiment might be largely due to the formation of highly excited quasibound states. The statistical errors of the rate constants, which is the sun of results obtained from both methods, are kept less then 5% by running 2500 trajectories in the first method and 500 in the second

  9. Structural changes in a copper alloy due to helium implantation

    International Nuclear Information System (INIS)

    Moreno, D.; Eliezer, D.

    1996-01-01

    The most suitable nuclear fusion reaction for energy production occurs between the two heavy hydrogen isotopes, deuterium and tritium. Structural materials in fusion reactors will be exposed to helium implantation over a broad range of energies. The deformation and partial exfoliation of surface layers due to hydrogen isotopes and helium contribute to the total erosion of the first wall. For this reason, one of the most important criteria in the choice of materials for the first wall of fusion reactors is the material's damage resistance. Recent advances in developing nuclear fusion reactors reveal that efficient heat removal from plasma-facing components is very important. Copper and copper alloys are considered an attractive choice for transporting such a high heat flux without thermal damage as they have high thermal conductivity. In the present study the authors report on the structural changes in a copper alloy, due to the helium implantation on the very near surface area, observed by transmission electron microscopy

  10. Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium

    International Nuclear Information System (INIS)

    Barfoot, K.M.; Webb, R.P.; Donnelly, S.E.

    1984-01-01

    Development of topography in thin (55.5 μg cm -2 ) self-supporting aluminium films, caused by high fluence (approx. 10 17 ions cm -2 ) irradiation with 5 keV helium ions, has been observed. This has been achieved by measuring the topography-enhanced energy straggling of 0.40 MeV 4 He + ions transmitted through the foils and detected with an electrostatic analyser of resolution 0.2 keV. Features, about 0.7 μm in width, are observed with scanning electron microscopy. TRIM Monte Carlo calculations of the implantation processes are performed in order to follow the helium implantation and damage depth distributions. It is deduced that a form of thin film micro-wrinkling has occurred which is caused by the relief of stress brought about by the implantation of helium. (author)

  11. Comparative study of image contrast in scanning electron microscope and helium ion microscope.

    Science.gov (United States)

    O'Connell, R; Chen, Y; Zhang, H; Zhou, Y; Fox, D; Maguire, P; Wang, J J; Rodenburg, C

    2017-12-01

    Images of Ga + -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga + density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

  12. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    International Nuclear Information System (INIS)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

    2010-01-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  13. Defects induced by helium implantation in SiC

    International Nuclear Information System (INIS)

    Oliviero, E.; Barbot, J.F.; Declemy, A.; Beaufort, M.F.; Oliviero, E.

    2008-01-01

    SiC is one of the considered materials for nuclear fuel conditioning and for the fabrication of some core structures in future nuclear generation reactors. For the development of this advance technology, a fundamental research on this material is of prime importance. In particular, the implantation/irradiation effects have to be understood and controlled. It is with this aim that the structural alterations induced by implantation/irradiation in SiC are studied by different experimental techniques as transmission electron microscopy, helium desorption, X-ray diffraction and Rutherford backscattering spectrometry. In this work, the different types of defects induced by helium implantation in SiC, point or primary defects (obtained at low energy (∼100 eV) until spread defects (obtained at higher energy (until ∼2 MeV)) are exposed. The amorphization/recrystallization and swelling phenomena are presented too. (O.M.)

  14. Effect of helium implantation on mechanical properties of EUROFER97 evaluated by nanoindentation

    International Nuclear Information System (INIS)

    Roldán, M.; Fernández, P.; Rams, J.; Jiménez-Rey, D.; Ortiz, C.J.; Vila, R.

    2014-01-01

    Helium effects on EUROFER97 mechanical properties were studied by means of nanoindentation. The steel was implanted with He ions in a stair-like profile configuration using energies from 2 to 15 MeV at room temperature. Firstly, a deep nanoindentation study was carried out on as-received state (normalized + tempered) in order to obtain a reliable properties database at the nanometric scale, including aspects such as indentation size effect. The nanoindentation hardness of tests on He implanted samples showed a hardness increase depending on the He concentration. The hardness increase follows the He implantation concentration profile with a good accuracy according to BCA calculations using MARLOWE code, considering the whole volume affected by the nanoindentation tests. The results obtained in this work shown that nanoindentation technique permits to assess any change of hardness properties due to ion implantation

  15. Ion implantation: an annotated bibliography

    International Nuclear Information System (INIS)

    Ting, R.N.; Subramanyam, K.

    1975-10-01

    Ion implantation is a technique for introducing controlled amounts of dopants into target substrates, and has been successfully used for the manufacture of silicon semiconductor devices. Ion implantation is superior to other methods of doping such as thermal diffusion and epitaxy, in view of its advantages such as high degree of control, flexibility, and amenability to automation. This annotated bibliography of 416 references consists of journal articles, books, and conference papers in English and foreign languages published during 1973-74, on all aspects of ion implantation including range distribution and concentration profile, channeling, radiation damage and annealing, compound semiconductors, structural and electrical characterization, applications, equipment and ion sources. Earlier bibliographies on ion implantation, and national and international conferences in which papers on ion implantation were presented have also been listed separately

  16. Effects of helium implantation on fatigue properties of F82H-IEA heat

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, N.; Murase, Y.; Nagakawa, J. [National Research Institute for Metals, Tsukuba, Ibaraki (Japan)

    2007-07-01

    Full text of publication follows: Ferritic steels including reduced activation ones that have been recognized as attractive structural candidates for DEMO reactors and the beyond are known to be highly resistant to helium embrittlement. However, almost studies that deduced this behavior have been carried out by means of short time experiments such as tensile tests, and a few results are available concerning long term inspections, although the detrimental helium effect appears more severely in the latter. The aim of this work is to obtain further information on the influence of helium on fatigue properties of a representative reduced activation ferritic/martensitic steel F82H (8Cr2WVTa) using helium implantation technique with a cyclotron. The material examined is an IEA heat version of F82H. In order to realize a fine grain size due to thin specimens (0.08 mm thick) for ion irradiation, normalizing was conducted at rather low temperature of 1213 K, followed by tempering at 1023 K. Helium was implanted by {alpha}-particle irradiation at 823 K, a desired highest temperature of this material for first wall application, to the concentration of 100 appm He with an implantation rate of about 1.7 x 10{sup -3} appm He/s. Subsequent fatigue tests were conducted at the same temperature as that of irradiation, not only on implanted specimens but also on reference controls which were not implanted with helium but experienced the same metallurgical histories as those of irradiated ones. After fracture, samples were observed with electron microscopes. In short time periods, it has been notified that helium introduction caused no significant deterioration of both fatigue life and extension at fracture. In addition, all specimens failed in a fully trans-crystalline and ductile manner, irrespective of whether helium was present or not. Indication of grain boundary embrittlement was therefore not discerned. These facts would reflect insusceptible characteristics of this material to

  17. Effects of helium implantation on fatigue properties of F82H-IEA heat

    International Nuclear Information System (INIS)

    Yamamoto, N.; Murase, Y.; Nagakawa, J.

    2007-01-01

    Full text of publication follows: Ferritic steels including reduced activation ones that have been recognized as attractive structural candidates for DEMO reactors and the beyond are known to be highly resistant to helium embrittlement. However, almost studies that deduced this behavior have been carried out by means of short time experiments such as tensile tests, and a few results are available concerning long term inspections, although the detrimental helium effect appears more severely in the latter. The aim of this work is to obtain further information on the influence of helium on fatigue properties of a representative reduced activation ferritic/martensitic steel F82H (8Cr2WVTa) using helium implantation technique with a cyclotron. The material examined is an IEA heat version of F82H. In order to realize a fine grain size due to thin specimens (0.08 mm thick) for ion irradiation, normalizing was conducted at rather low temperature of 1213 K, followed by tempering at 1023 K. Helium was implanted by α-particle irradiation at 823 K, a desired highest temperature of this material for first wall application, to the concentration of 100 appm He with an implantation rate of about 1.7 x 10 -3 appm He/s. Subsequent fatigue tests were conducted at the same temperature as that of irradiation, not only on implanted specimens but also on reference controls which were not implanted with helium but experienced the same metallurgical histories as those of irradiated ones. After fracture, samples were observed with electron microscopes. In short time periods, it has been notified that helium introduction caused no significant deterioration of both fatigue life and extension at fracture. In addition, all specimens failed in a fully trans-crystalline and ductile manner, irrespective of whether helium was present or not. Indication of grain boundary embrittlement was therefore not discerned. These facts would reflect insusceptible characteristics of this material to high

  18. High temperature indentation of helium-implanted tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Gibson, James S.K.-L., E-mail: james.gibson@materials.ox.ac.uk [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom); Roberts, Steve G. [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom); Culham Centre for Fusion Energy, Culham Science Centre, Abingdon OX14 3DB (United Kingdom); Armstrong, David E.J. [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom)

    2015-02-11

    Nanoindentation has been performed on tungsten, unimplanted and helium-implanted to ~600 appm, at temperatures up to 750 °C. The hardening effect of the damage was 0.90 GPa at 50 °C, but is negligible above 450 °C. The hardness value at a given temperature did not change on re-testing after heating to 750 °C. This suggests that the helium is trapped in small vacancy complexes that are stable to at least 750 °C, but which can be bypassed due to increased dislocation mobility (cross slip or climb) above 450 °C.

  19. Ion implantation and amorphous metals

    International Nuclear Information System (INIS)

    Hohmuth, K.; Rauschenbach, B.

    1981-01-01

    This review deals with ion implantation of metals in the high concentration range for preparing amorphous layers (>= 10 at%, implantation doses > 10 16 ions/cm 2 ). Different models are described concerning formation of amorphous phases of metals by ion implantation and experimental results are given. The study of amorphous phases has been carried out by the aid of Rutherford backscattering combined with the channeling technique and using transmission electron microscopy. The structure of amorphous metals prepared by ion implantation has been discussed. It was concluded that amorphous metal-metalloid compounds can be described by a dense-random-packing structure with a great portion of metal atoms. Ion implantation has been compared with other techniques for preparing amorphous metals and the adventages have been outlined

  20. Deposition, milling, and etching with a focused helium ion beam

    NARCIS (Netherlands)

    Alkemade, P.F.A.; Veldhoven, E. van

    2012-01-01

    The recent successful development of the helium ion microscope has produced both a new type of microscopy and a new tool for nanoscale manufacturing. This chapter reviews the first explorations in this new field in nanofabrication. The studies that utilize the Orion helium ion microscope to grow or

  1. Low energy helium implantation of aluminum

    International Nuclear Information System (INIS)

    Wilson, K.L.; Thomas, G.J.

    1976-02-01

    A series of 20 keV He + implantations was conducted on well-annealed MARZ grade aluminum at fluxes of 6 x 10 14 and 6 x 10 13 He + /cm 2 sec. Three distinct, temperature dependent He release mechanisms were found by He re-emission measurements during implantation, and by subsequent SEM and TEM investigations. At 0.08 of the melting temperature (T/sub m/) gas re-emission rose smoothly after a critical dose of 3 x 10 17 He + /cm 2 , with extensive blistering. The intermediate temperature range (approximately 0.3 T/sub m/) was characterized by repeated flake exfoliation and bursts of He after a dose of 3 x 10 17 He + /cm 2 . Rapid He evolution, with hole formation was found above 0.7 T/sub m/. No significant differences in either gas re-emission or surface deformation were found between the two fluxes employed

  2. Helium implanted AlHf as studied by 181 Ta TDPAC

    Indian Academy of Sciences (India)

    Measurements on helium implanted sample indicate the binding of helium associated defects by Hf solute clusters. Isochronal annealing measurements indicate the dissociation of the helium implantation induced defects from Hf solute clusters for annealing treatments beyond 650 K. On comparison of the present results ...

  3. Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

    International Nuclear Information System (INIS)

    Himics, L.; Tóth, S.; Veres, M.; Tóth, A.; Koós, M.

    2015-01-01

    Highlights: • Characteristics of nitrogen implantation of nanodiamond using two low ion energy ion implantation methods were compared. • Formation of complex nitrogen-related defect centers was promoted by subsequent helium implantation and heat treatments. • Depth profiles of the implanted ions and the generated vacancies were determined using SRIM calculations. • The presence of nitrogen impurity was demonstrated by Fourier-transform infrared spectroscopic measurements. • A new nitrogen related band was detected in the photoluminescence spectrum of the implanted samples that was attributed to the N3 color center in nanodiamond. - Abstract: Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750 °C, 450 °C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp 2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation

  4. Helium accumulation and bubble formation in FeCoNiCr alloy under high fluence He+ implantation

    Science.gov (United States)

    Chen, Da; Tong, Y.; Li, H.; Wang, J.; Zhao, Y. L.; Hu, Alice; Kai, J. J.

    2018-04-01

    Face-centered cubic (FCC) high-entropy alloys (HEA), as emerging alloys with equal-molar or near equal-molar constituents, show a promising radiation damage resistance under heavy ion bombardment, making them potential for structural material application in next-generation nuclear reactors, but the accumulation of light helium ions, a product of nuclear fission reaction, has not been studied. The present work experimentally studied the helium accumulation and bubble formation at implantation temperatures of 523 K, 573 K and 673 K in a homogenized FCC FeCoNiCr HEA, a HEA showing excellent radiation damage resistance under heavy ion irradiation. The size and population density of helium bubbles in FeCoNiCr samples were quantitatively analyzed through transmission electron microscopy (TEM), and the helium content existing in bubbles were estimated from a high-pressure Equation of State (EOS). We found that the helium diffusion in such condition was dominated by the self-interstitial/He replacement mechanism, and the corresponding activation energy in FeCoNiCr is comparable with the vacancy migration energy in Ni and austenitic stainless steel but only 14.3%, 31.4% and 51.4% of the accumulated helium precipitated into helium bubbles at 523 K, 573 K and 673 K, respectively, smaller than the pure Ni case. Importantly, the small bubble size suggested that FeCoNiCr HEA has a high resistance of helium bubble formation compared with Ni and steels.

  5. Temperature dependence of helium-implantation-induced lattice swelling in polycrystalline tungsten: X-ray micro-diffraction and Eigenstrain modelling

    International Nuclear Information System (INIS)

    Broglie, I. de; Beck, C.E.; Liu, W.; Hofmann, F.

    2015-01-01

    Using synchrotron X-ray micro-diffraction and Eigenstrain analysis the distribution of lattice swelling near grain boundaries in helium-implanted polycrystalline tungsten is quantified. Samples heat-treated at up to 1473 K after implantation show less uniform lattice swelling that varies significantly from grain to grain compared to as-implanted samples. An increase in lattice swelling is found in the vicinity of some grain boundaries, even at depths beyond the implanted layer. These findings are discussed in terms of the evolution of helium-ion-implantation-induced defects

  6. A description of bubble growth and gas release of helium implanted tungsten

    International Nuclear Information System (INIS)

    Sharafat, S.; Hu, Q.; Ghoniem, N.; Tkahashi, A.

    2007-01-01

    Full text of publication follows: Bubble growth and gas release during annealing of helium implanted tungsten is described using a Kinetic Monte Carlo approach. The implanted spatial profiles of stable bubble nuclei are first determined using the Kinetic Rate Theory based helium evolution code, HEROS. The effects of implantation energy, temperature, and bias forces, such as temperature- and stress gradients on bubble migration and coalescence are investigated to explain experimental gas release measurements. This comprehensive helium bubble evolution and release model, demonstrates the impact of near surface (< 1 um) versus deep helium implantation on bubble evolution. Near surface implanted helium bubbles readily attain large equilibrium sizes, while matrix bubbles remain small with high helium pressures. Using the computer simulation, the various stages of helium bubble nucleation, growth, coalescence, and migration are demonstrated and compared with available experimental results. (authors)

  7. Structure of ion-implanted ceramics

    International Nuclear Information System (INIS)

    Naramoto, Hiroshi

    1983-01-01

    The variation of structure of LiF, MgO, Al 2 O 3 and TiO 2 accompanying annealing after ion implantation is explained. The analysis of structure is usually made by the perturbed gamma ray angular correlation, the internal electron Moessbauer method, or the ion scattering method. The results of analyses are discussed for alkali ion implantation, Fe-ion implantation, In-ion implantation, Au-ion implantation, Pt-ion implantation, Pb-ion implantation and transition metal ion implantation. The coupling of the implanted elements with lattice defects and matrix elements, and the compatibility between deposited elements and matrix crystal lattice were studied. The variation of physical properties due to ion implantation such as phase transition, volume change, the control of single crystal region, and the variation of hardness near surface were investigated, and the examples are presented. (Kato, T.)

  8. Chemical effects induced by ion implantation in molecular solids

    International Nuclear Information System (INIS)

    Foti, G.; Calcagno, L.; Puglisi, O.

    1983-01-01

    Ion implantation in molecular solids as ice, frozen noble gases, benzene and polymers produces a large amount of new molecules compared to the starting materials. Mass and energy analysis of ejected molecules together with the erosion yield, are discussed for several ion-target combinations at low temperature. The observed phenomena are analyzed in terms of deposited ennergy in electronic and nuclear collisions, for incoming beams, as helium or argon, in the range 10-2000 keV. (orig.)

  9. Surface microhardening by ion implantation

    International Nuclear Information System (INIS)

    Singh, Amarjit

    1986-01-01

    The paper discusses the process and the underlying mechanism of surface microhardening by implanting suitable energetic ions in materials like 4145 steel, 304 stainless steel, aluminium and its 2024-T351 alloy. It has been observed that boron and nitrogen implantation in materials like 4145 steel and 304 stainless steel can produce a significant increase in surface hardness. Moreover the increase can be further enhanced with suitable overlay coatings such as aluminium (Al), Titanium (Ti) and carbon (C). The surface hardening due to implantation is attributed to precipitation hardening or the formation of stable/metastable phase or both. The effect of lithium implantation in aluminium and its alloy on microhardness with increasing ion dose and ion beam energy is also discussed. (author)

  10. HEATHER - HElium Ion Accelerator for RadioTHERapy

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Jordan [Huddersfield U.; Edgecock, Thomas [Huddersfield U.; Green, Stuart [Birmingham U.; Johnstone, Carol [Fermilab

    2017-05-01

    A non-scaling fixed field alternating gradient (nsFFAG) accelerator is being designed for helium ion therapy. This facility will consist of 2 superconducting rings, treating with helium ions (He²⁺ ) and image with hydrogen ions (H + 2 ). Currently only carbon ions are used to treat cancer, yet there is an increasing interest in the use of lighter ions for therapy. Lighter ions have reduced dose tail beyond the tumour compared to carbon, caused by low Z secondary particles produced via inelastic nuclear reactions. An FFAG approach for helium therapy has never been previously considered. Having demonstrated isochronous acceleration from 0.5 MeV to 900 MeV, we now demonstrate the survival of a realistic beam across both stages.

  11. SIMS as a new methodology to depth profile helium in as-implanted and annealed pure bcc metals?

    Energy Technology Data Exchange (ETDEWEB)

    Gorondy-Novak, S. [CEA, DEN, Service de Recherches de Métallurgie Physique, Université Paris-Saclay, F-91191 Gif-sur-Yvette (France); Jomard, F. [Groupe d' Etude de la Matière Condensée, CNRS, UVSQ, 45 avenue des Etats-Unis, 78035 Versailles cedex (France); Prima, F. [PSL Research University, Chimie ParisTech – CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France); Lefaix-Jeuland, H., E-mail: helene.lefaix@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Université Paris-Saclay, F-91191 Gif-sur-Yvette (France)

    2017-05-01

    Reliable He profiles are highly desirable for better understanding helium behavior in materials for future nuclear applications. Recently, Secondary Ions Mass Spectrometry (SIMS) allowed the characterization of helium distribution in as-implanted metallic systems. The Cs{sup +} primary ion beam coupled with CsHe{sup +} molecular detector appeared to be a promising technique which overcomes the very high He ionization potential. In this study, {sup 4}He depth profiles in pure body centered cubic (bcc) metals (V, Fe, Ta, Nb and Mo) as-implanted and annealed, were obtained by SIMS. All as-implanted samples exhibited a projected range of around 200 nm, in agreement with SRIM theoretical calculations. After annealing treatment, SIMS measurements evidenced the evolution of helium depth profile with temperature. The latter SIMS results were compared to the helium bubble distribution obtained by Transmission Electron Microscopy (TEM). This study confirmed the great potential of this experimental procedure as a He-depth profiling technique in bcc metals. Indeed, the methodology described in this work could be extended to other materials including metallic and non-metallic compounds. Nevertheless, the quantification of helium concentration after annealing treatment by SIMS remains uncertain probably due to the non-uniform ionization efficiency in samples containing large bubbles.

  12. Radiation blistering of niobium in sequence irradiated by helium ions with different energy

    International Nuclear Information System (INIS)

    Das, S.K.; Kaminskij, M.S.; Guseva, M.I.; Gusev, V.M.; Krasulin, Yu.L.; Martynenko, Yu.V.; Rozina, I.A.

    1977-01-01

    The results of the investigation of the blistering of the surface of polycrystalline niobium foils subjected to successive irradiation by helium ions of energies of 3 to 50 keV are reported. The critical doses of irradiation, the types of blisters and the rate of erosion were determined. A comparative analysis of the formation of blisters on cold-rolled and annealed niobium has been made. On cold-rolled niobium the blistering is mainly due to ions with energies of 3 to 80 keV, on annealed niobium of 100 to 500 keV. The erosion of cold-rolled niobium takes place through blisters formed by the action of helium ions with energies of the order of 45 keV, and that of annealed niobium, through helium ions with energies of 100 to 500 keV. The observed differences in the formation of blisters on niobium irradiated with helium ions of a wide range of energies are explained by the change in the diffusion kinetics of implanted ions having a uniform distribution across the thickness of the target

  13. Interface strength of SiC/SiC composites with and without helium implantation using micro-indentation test

    International Nuclear Information System (INIS)

    Saito, M.; Ohtsuka, S.

    1998-01-01

    Helium implantation effects on interface strength of SiC/SiC composite were studied using the micro-indentation fiber push-out method. Helium implantation was carried out with an accelerator at about 400 K. Total amount of implanted helium was approximately 10000 appm. Increase of the fiber push-in load was observed in as-implanted specimen. After post-implantation-annealing at 1673 K for 1 h, the change of the fiber push-in load by helium implantation was not observed. Effects of helium implantation on the interface are discussed. (orig.)

  14. Observation of visible emission from the molecular helium ion in the afterglow of a dense helium Z-pinch plasma

    International Nuclear Information System (INIS)

    Tucker, J.E.; Brake, M.L.; Gilgenbach, R.M.

    1986-01-01

    The authors present the results of axial and radial time resolved visible emission spectroscopy from the afterglow of a dense helium Z-pinch. These results show that the visible emissions in the pinch afterglow are dominated by line emissions from molecular helium and He II. Axial spectroscopy measurements show the occurrence of several absorption bands which cannot be identified as molecular or atomic helium nor impurities from the discharge chamber materials. The authors believe that these absorption bands are attributable to the molecular helium ion which is present in the discharge. The molecular ion has been observed by others in low pressure and temperature helium discharges directly by means of mass spectrometry and indirectly by the presence of helium atoms in the 2/sup 3/S state, (the He 2/sup 3/S state is believed to result from molecular helium ion recombination). However, the molecular helium ion has not previously been observed spectroscopically

  15. Ion beam stabilization in ion implantation equipment

    International Nuclear Information System (INIS)

    Pina, L.

    1973-01-01

    The results are presented of experimental efforts aimed at ion beam current stabilization in an equipment for ion implantation in solids. The related problems of power supplies are discussed. Measured characteristics of laboratory equipment served the determination of the parameters to be required of the supplies as well as the design and the construction of the supplies. The respective wiring diagram is presented. (J.K.)

  16. Ion implantation in semiconductor bodies

    International Nuclear Information System (INIS)

    Badawi, M.H.

    1984-01-01

    Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

  17. Hardness of ion implanted ceramics

    International Nuclear Information System (INIS)

    Oliver, W.C.; McHargue, C.J.; Farlow, G.C.; White, C.W.

    1985-01-01

    It has been established that the wear behavior of ceramic materials can be modified through ion implantation. Studies have been done to characterize the effect of implantation on the structure and composition of ceramic surfaces. To understand how these changes affect the wear properties of the ceramic, other mechanical properties must be measured. To accomplish this, a commercially available ultra low load hardness tester has been used to characterize Al 2 O 3 with different implanted species and doses. The hardness of the base material is compared with the highly damaged crystalline state as well as the amorphous material

  18. Surface engineering by ion implantation

    International Nuclear Information System (INIS)

    Nielsen, Bjarne Roger

    1995-01-01

    Awidespread commercial applica tion iof particle accelerators is for ion implantation. Accelerator beams are used for ion implantation into metals, alloying a thin surface layer with foreign atoms to concentrations impossible to achieve by thermal processes, making for dramatic improvements in hardness and in resistance to wear and corrosion. Traditional hardening processes require high temperatures causing deformation; ion implantation on the other hand is a ''cold process'', treating the finished product. The ionimplanted layer is integrated in the substrate, avoiding the risk of cracking and delamination from normal coating processes. Surface properties may be ''engineered'' independently of those of the bulk material; the process does not use environmentally hazardous materials such as chromium in the surface coating. The typical implantation dose required for the optimum surface properties of metals is around 2 x 10 17 ion/cm 2 , a hundred times the typical doses for semiconductor processing. When surface areas of more than a few square centimetres have to be treated, the implanter must therefore be able to produce high beam currents (5 to 10 mA) to obtain an acceptable treatment time. Ion species used include nitrogen, boron, carbon, titanium, chromium and tantalum, and beam energies range from 50 to 200 keV. Since most components are three dimensional, it must be possible to rotate and tilt them in the beam, and control beam position over a large area. Examples of industrial applications are: - surface treatment of prostheses (hip and knee joints) to reduce wear of the moving parts, using biocompatible materials; - ion implantation into high speed ball bearings to protect against the aqueous corrosion in jet engines (important for service helicopters on oil rigs); - hardening of metal forming and cutting tools; - reduction of corrosive wear of plastic moulding tools, which are expensive to produce

  19. Helium implanted RAFM steels studied by positron beam Doppler Broadening and Thermal Desorption Spectroscopy

    International Nuclear Information System (INIS)

    Carvalho, I; Schut, H; Fedorov, A; Luzginova, N; Desgardin, P; Sietsma, J

    2013-01-01

    Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To mimic neutron irradiation conditions, Eurofer97 samples were implanted with helium ions at energies of 500 keV and 2 MeV and doses of 5x10 15 -10 16 He /cm 2 , creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). The DB data could be fitted with one or two layers of material, depending on the He implantation energy. The S and W values obtained for the implanted regions suggest the presence of not only vacancy clusters but also positron traps of the type present in a sub-surface region found on the reference sample. The traps found in the implanted layers are expected to be He n V m clusters. For the 2 MeV, 10 16 He/cm 2 implanted sample, three temperature regions can be observed in the TDS data. Peaks below 450 K can be ascribed to He released from vacancies in the neighbourhood of the surface, the phase transition is found at 1180 K and the peak at 1350 K is likely caused by the migration of bubbles.

  20. A description of stress driven bubble growth of helium implanted tungsten

    International Nuclear Information System (INIS)

    Sharafat, Shahram; Takahashi, Akiyuki; Nagasawa, Koji; Ghoniem, Nasr

    2009-01-01

    Low energy (<100 keV) helium implantation of tungsten has been shown to result in the formation of unusual surface morphologies over a large temperature range (700-2100 deg. C). Simulation of these macroscopic phenomena requires a multiscale approach to modeling helium transport in both space and time. We present here a multiscale helium transport model by coupling spatially-resolved kinetic rate theory (KRT) with kinetic Monte Carlo (KMC) simulation to model helium bubble nucleation and growth. The KRT-based HEROS Code establishes defect concentrations as well as stable helium bubble nuclei as a function of implantation parameters and position from the implanted surface and the KMC-based Mc-HEROS Code models the growth of helium bubbles due to migration and coalescence. Temperature- and stress-gradients can act as driving forces, resulting in biased bubble migration. The Mc-HEROS Code was modified to simulate the impact of stress gradients on bubble migration and coalescence. In this work, we report on bubble growth and gas release of helium implanted tungsten W/O stress gradients. First, surface pore densities and size distributions are compared with available experimental results for stress-free helium implantation conditions. Next, the impact of stress gradients on helium bubble evolution is simulated. The influence of stress fields on bubble and surface pore evolution are compared with stress-free simulations. It is shown that near surface stress gradients accelerate helium bubbles towards the free surface, but do not increasing average bubble diameters significantly.

  1. A compact quadrupole ion filter for helium detection

    International Nuclear Information System (INIS)

    Pereira, E.B.

    1981-01-01

    A compact quadrupole ion filter was conceived and constructed for optimum performance at the mass four region of the mass spectra. It was primarely designed for geological applications in the measurements of helium of soil-gases. The whole ion filter structure is 15 cm long by 3.5 cm diameter, including ion source and collecting plate. The sensitivity to helium is of the order of 10 - 2 A.torr - 1 measured at a total pressure of 6x10 - 6 torr and resolution 6. The system can be easily adapted to work as a dynamic residual gas analyser for other purposes. (Author) [pt

  2. Transport and extraction of radioactive ions stopped in superfluid helium

    NARCIS (Netherlands)

    Huang, WX; Dendooven, P; Gloos, K; Takahashi, N; Arutyunov, K; Pekola, JP; Aysto, J

    A new approach to convert a high energy beam to a low energy one, which is essential for the next generation radioactive ion beam facilities, has been proposed and tested at Jyvaskyla, Finland. An open Ra-223 alpha-decay-recoil source has been used to produce radioactive ions in superfluid helium.

  3. Preparation of targets by ion implantation

    International Nuclear Information System (INIS)

    Santry, D.C.

    1976-01-01

    Various factors are described which are involved in target preparation by direct ion implantation and the limitations and pitfalls of the method are emphasized. Examples are given of experiments for which ion implanted targets are well suited. (author)

  4. Trapping and re-emission of energetic hydrogen and helium ions in materials

    International Nuclear Information System (INIS)

    Yamaguchi, Sadae

    1981-01-01

    The experimental results on the trapping and re-emission of energetic hydrogen and helium ions in materials are explained. The trapping of deuterium and helium in graphite saturates at the concentration of 10 18 ions/cm 2 . The trapping rate of hydrogen depends on the kinds of target materials. In the case of the implantation in Mo over 3 x 10 16 H/cm 2 , hydrogen is hardly trapped. On the other hand, the trapping of hydrogen in Ti, Zr and Ta which form solid solution is easily made. The hydrogen in these metals can diffuse toward the inside of metals. The deuterium retained in 316 SS decreased with time. The trapping rate reached saturation more rapidly at higher implantation temperature. The effective diffusion constant for the explanation of the re-emission process is 1/100 as small as the ordinary value. The radiation damage due to helium irradiation affects on the trapping of deuterium in Mo. The temperature dependence of the trapping rate can be explained by the diffusion model based on the Sievert's law. The re-emission of helium was measured at various temperature. At low temperature, the re-emission was low at first, then the rate increased. At high temperature, the re-emission rate was high from the beginning. (Kato, T.)

  5. Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

    Energy Technology Data Exchange (ETDEWEB)

    Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

    2010-11-01

    Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

  6. Improvement of helium characteristics using argon in cylindrical ion source

    International Nuclear Information System (INIS)

    Abdel salam, F.W.; El-Khabeary, H.; Abdel reheem, A.M.; Kassem, N.E.; Ahmed, M.M.

    2004-01-01

    the discharge characteristics of pure helium gas were measured at different pressures in the range of 10 -4 torr. in order o improve its characteristics, argon gas was added . different percentages of argon gas ,1%,2%,3%,4%,5%,10% and 20% were used at constant values of pressures . Measurements of the efficiency of the cylindrical ion source in case of adding different percentages of argon gas to pure helium gas were made . an optimum value of the output ion beam current was obtained when 2% argon gas was added to pure helium gas . an output ion beam current of 105 μA was obtained at a pressure of 7X10 -4 torr inside the vacuum chamber and discharge current of 0.6 m A

  7. The Erosion of Frozen Argon by Swift Helium Ions

    DEFF Research Database (Denmark)

    Besenbacher, F.; Bøttiger, Jørgen; Graversen, O.

    1981-01-01

    The temperature, energy, and thickness dependence of the erosion rates of frozen argon films when irradiated with 0.1–3 MeV helium ions have been measured. The erosion yields Y are much too high to be explained by the concentional collisional cascade-sputtering theory and are furthermore unequivo......The temperature, energy, and thickness dependence of the erosion rates of frozen argon films when irradiated with 0.1–3 MeV helium ions have been measured. The erosion yields Y are much too high to be explained by the concentional collisional cascade-sputtering theory and are furthermore...... unequivocally associated with electronic processes generated by the bombarding particle. In the present energy region, it is found that Y scales approximately as the electronic stopping power squared, depends on the charge state of the incoming helium ions, and perhaps more important, is independent...

  8. Focal depth measurement of scanning helium ion microscope

    International Nuclear Information System (INIS)

    Guo, Hongxuan; Itoh, Hiroshi; Wang, Chunmei; Zhang, Han; Fujita, Daisuke

    2014-01-01

    When facing the challenges of critical dimension measurement of complicated nanostructures, such as of the three dimension integrated circuit, characterization of the focal depth of microscopes is important. In this Letter, we developed a method for characterizing the focal depth of a scanning helium ion microscope (HIM) by using an atomic force microscope tip characterizer (ATC). The ATC was tilted in a sample chamber at an angle to the scanning plan. Secondary electron images (SEIs) were obtained at different positions of the ATC. The edge resolution of the SEIs shows the nominal diameters of the helium ion beam at different focal levels. With this method, the nominal shapes of the helium ion beams were obtained with different apertures. Our results show that a small aperture is necessary to get a high spatial resolution and high depth of field images with HIM. This work provides a method for characterizing and improving the performance of HIM.

  9. Current trends in ion implantation

    International Nuclear Information System (INIS)

    Gwilliam, R.M.

    2001-01-01

    As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing one of these challenges, namely the need for tighter control of implant uniformity and dose. Additionally, some vacancy-mediated processes are described with the implication that these may provide areas in which positron annihilation spectroscopy could make a significant contribution. (orig.)

  10. Radioactive core ions of microclusters, ``snowballs`` in superfluid helium

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, N. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Shimoda, T. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Fujita, Y. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Miyatake, H. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Mizoi, Y. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Kobayashi, H. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Sasaki, M. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Shirakura, T. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Itahashi, T. [Research Center for Nuclear Physics, Osaka Univ., Ibaraki (Japan); Mitsuoka, S. [Research Center for Nuclear Physics, Osaka Univ., Ibaraki (Japan); Matsukawa, T. [Naruto Univ. of Education, Tokushima (Japan); Ikeda, N. [Kyushu Univ., Fukuoka (Japan). Dept. of Physics; Morinobu, S. [Kyushu Univ., Fukuoka (Japan). Dept. of Physics; Hinde, D.J. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences; Asahi, K. [Tokyo Inst. of Tech. (Japan). Dept. of Physics; Ueno, H. [Tokyo Inst. of Tech. (Japan). Dept. of Physics; Izumi, H. [Tokyo Inst. of Tech. (Japan). Dept. of Physics

    1996-12-01

    Short-lived beta-ray emitters, {sup 12}B, sustaining nuclear spin polarization were introduced into superfluid helium. The nuclear polarization of {sup 12}B was observed via measurement of beta-ray asymmetry. It was found that the nuclear polarization was preserved throughout the lifetime of {sup 12}B (20.3 ms). This suggests that the ``snowball``, an aggregation of helium atoms produced around an alien ion, constitutes a suitable milieu for freezing-out the nuclear spin of the core ion and that most likely the solidification takes place at the interior of the aggregation. (orig.).

  11. Radioactive core ions of microclusters, ''snowballs'' in superfluid helium

    International Nuclear Information System (INIS)

    Takahashi, N.; Mitsuoka, S.; Matsukawa, T.; Ikeda, N.; Morinobu, S.; Hinde, D.J.; Asahi, K.; Ueno, H.; Izumi, H.

    1996-01-01

    Short-lived beta-ray emitters, 12 B, sustaining nuclear spin polarization were introduced into superfluid helium. The nuclear polarization of 12 B was observed via measurement of beta-ray asymmetry. It was found that the nuclear polarization was preserved throughout the lifetime of 12 B (20.3 ms). This suggests that the ''snowball'', an aggregation of helium atoms produced around an alien ion, constitutes a suitable milieu for freezing-out the nuclear spin of the core ion and that most likely the solidification takes place at the interior of the aggregation. (orig.)

  12. Conductivity change of defective graphene by helium ion beams

    Directory of Open Access Journals (Sweden)

    Yuichi Naitou

    2017-04-01

    Full Text Available Applying a recently developed helium ion microscope, we demonstrated direct nano-patterning and Anderson localization of single-layer graphene (SLG on SiO2/Si substrates. In this study, we clarified the spatial-resolution-limitation factor of direct nano-patterning of SLG. Analysis of scanning capacitance microscopy measurements reveals that the conductivity of helium ion (H+-irradiated SLG nanostructures depends on their geometrical size, i.e., the smaller the H+-irradiated SLG region, the higher its conductivity becomes. This finding can be explained by the hopping carrier transport across strongly localized states of defective SLG.

  13. Ion implantation and bio-compatibility

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Yoshiaki; Kusakabe, Masahiro [Sony Corp., Tokyo (Japan). Corporate Research Labs.; Iwaki, Masaya

    1992-07-01

    Surface modification of polymers by ion implantation has been carried out to control surface properties such as conductivity, wettability, blood and tissue compatibility. Ion implantation into silicone rubber, polystyrene and segmented polyurethane was performed at 150 keV with doses ranging from 1 x 10[sup 15] to 3 x 10[sup 17] ions/cm[sup 2] to improve bio-compatibility. The platelet accumulation on ion implanted silicone rubber decreased and non-thrombogenicity of ion implanted specimens were improved. The ion implanted polystyrene and segmented polyurethane have been found to exhibit remarkably higher adhesion and spreading of endothelial cells compared to the non-implanted case. It is concluded that ion implantation into polymers is effective in controlling their bio-compatibility. (author).

  14. Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

    Science.gov (United States)

    Zhang, L.; Heinig, N. F.; Bazargan, S.; Abd-Ellah, M.; Moghimi, N.; Leung, K. T.

    2015-06-01

    The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion-Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new ‘bottom-up’ approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation.

  15. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

    1980-09-01

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

  16. Stopping Power of Solid Argon for Helium Ions

    DEFF Research Database (Denmark)

    Besenbacher, F.; Bøttiger, Jørgen; Grauersen, O.

    1981-01-01

    By means of the Rutherford-backscattering method, the stopping cross section of solid argon has been measured for 0.5–3 MeV helium ions to an accuracy of not, vert, similar3%. The results agree within the experimental accuracies with our earlier measurements for gaseous argon over the energy region...

  17. Sputtering of solid nitrogen by keV helium ions

    DEFF Research Database (Denmark)

    Ellegaard, O.; Schou, Jørgen; Sørensen, H.

    1993-01-01

    Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

  18. Fission neutron irradiation of copper containing implanted and transmutation produced helium

    DEFF Research Database (Denmark)

    Singh, B.N.; Horsewell, A.; Eldrup, Morten Mostgaard

    1992-01-01

    High purity copper containing approximately 100 appm helium was produced in two ways. In the first, helium was implanted by cyclotron at Harwell at 323 K. In the second method, helium was produced as a transmutation product in 800 MeV proton irradiation at Los Alamos, also at 323 K. The distribut......High purity copper containing approximately 100 appm helium was produced in two ways. In the first, helium was implanted by cyclotron at Harwell at 323 K. In the second method, helium was produced as a transmutation product in 800 MeV proton irradiation at Los Alamos, also at 323 K...... as well as the effect of the presence of other transmutation produced impurity atoms in the 800 MeV proton irradiated copper will be discussed....

  19. Effect of implanted helium on tensile properties and hardness of 9% Cr martensitic stainless steels

    Science.gov (United States)

    Jung, P.; Henry, J.; Chen, J.; Brachet, J.-C.

    2003-05-01

    Hundred micrometer thick specimens of 9% Cr martensitic steels EM10 and T91 were homogeneously implanted with He 4 to concentrations up to 0.5 at.% at temperatures from 150 to 550 °C. The specimens were tensile tested at room temperature and at the respective implantation temperatures. Subsequently the fracture surfaces were analysed by scanning electron microscopy and some of the specimens were examined in an instrumented hardness tester. The implanted helium caused hardening and embrittlement which both increased with increasing helium content and with decreasing implantation temperature. Fracture surfaces showed intergranular brittle appearance with virtually no necking at the highest implantation doses, when implanted below 250 °C. The present tensile results can be scaled to tensile data after irradiation in spallation sources on the basis of helium content but not on displacement damage. An interpretation of this finding by microstructural examination is given in a companion paper [J. Nucl. Mater., these Proceedings].

  20. High temperature tensile properties of 316 stainless steel implanted with helium

    International Nuclear Information System (INIS)

    Hasegawa, Akira; Yamamoto, Norikazu; Shiraishi, Haruki

    1993-01-01

    Helium embrittlement is one of the problems in structural materials for fusion reactors. Recently, martensitic steels have been developed which have a good resistance to high-temperature helium embrittlement, but the mechanism has not yet been clarified. In this paper, tensile behaviors of helium implanted austenitic stainless steels, which are sensitive to the helium embrittlement, were studied and compared with those of martensitic steels under the same experimental conditions, and the effect of microstructure on helium embrittlement was discussed. Helium was implanted by 300 appm at 573-623 K to miniature tensile speciments of 316 austenitic steels using a cyclotron accelerator. Solution annealed (316SA) and 20% cold worked (316CW) specimens were used. Post-implantation tensile tests were carried out at 573, 873 and 973 K. Yield stress at 573 K increased with the helium implantation in 316SA and 316CW, but the yield stress changes of 316SA at 873 and 973 K were different from that of 316CW. Black-dots were observed in the as-implanted specimen and bubbles were observed in the speciments tensile-tested at 873 and 973 K. Intergranular fracture was observed at only 973 K in both of the 316SA and 316CW specimens. Therefore, cold work did not suppress the high-temperature helium embrittlement under this experimental condition. The difference in the influence of helium on type 316 steel and 9Cr martensitic steels were discussed. Test temperature change of reduction in are showed clearly that helium embrittlement did not occur in 9Cr martensitic steels but occurred in 316 austenitic steels. Fine microstructures of 9Cr martensitic steels should suppress helium embrittlement at high temperatures. (author)

  1. Ion Implantation and Synthesis of Materials

    CERN Document Server

    Nastasi, Michael

    2006-01-01

    Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

  2. Laser Induced Fluorescence of Helium Ions in a Helicon Plasma

    Science.gov (United States)

    Compton, C. S.; Biloui, C.; Hardin, R. A.; Keesee, A. M.; Scime, E. E.; Boivin, R.

    2003-10-01

    The lack of a suitable Laser Induced Fluorescence (LIF) scheme for helium ions at visible wavelengths has prevented LIF from being employed in helium plasmas for measurements of ion temperature and bulk ion flow speeds. In this work, we will discuss our attempts to perform LIF of helium ions in a helicon source plasma using an infrared, tunable diode laser operating at 1012.36 nm. The infrared transition corresponds to excitation from the n = 4 level (4f ^2F) to the n = 5 (5g ^2G) level of singly ionized helium and therefore requires substantial electron temperatures (> 10 eV) to maintain an adequate ion population in the n = 4 state. Calculations using a steady state coronal model predict that the n = 4 state population will be 25% larger than the n = 5 population for our experimental conditions. The fluorescence decay from the n = 5 (5f ^2F) level of singly ionized helium level to the n = 3 (3d ^2D) level at 320.31 nm is monitored as the diode laser is swept through 10 GHz around the 1012.36 nm line. Note that the fluorescence emission requires a collisionally coupled transition between two different n = 5 quantum states. We will also present measurements of the emission intensities of both the 1012.36 nm and the 320.31 nm lines as a function of source neutral pressure, rf power, and plasma density. This work supported by the U.S. DoE EPSCoR Lab Partnership Program.

  3. Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

    International Nuclear Information System (INIS)

    Zhang, L; Heinig, N F; Bazargan, S; Abd-Ellah, M; Moghimi, N; Leung, K T

    2015-01-01

    The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion–Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new ‘bottom-up’ approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation. (paper)

  4. Production of amorphous alloys by ion implantation

    International Nuclear Information System (INIS)

    Grant, W.A.; Chadderton, L.T.; Johnson, E.

    1978-01-01

    Recent data are reported on the use of ion implantation to produce amorphous metallic alloys. In particular data on the dose dependence of the crystalline to amorphous transition induced by P + implantation of nickel is presented. (Auth.)

  5. Plasma immersion ion implantation into insulating materials

    International Nuclear Information System (INIS)

    Tian Xiubo; Yang Shiqin

    2006-01-01

    Plasma immersion ion implantation (PIII) is an effective surface modification tool. During PIII processes, the objects to be treated are immersed in plasmas and then biased to negative potential. Consequently the plasma sheath forms and ion implantation may be performed. The pre-requirement of plasma implantation is that the object is conductive. So it seems difficult to treat the insulating materials. The paper focuses on the possibilities of plasma implantation into insulting materials and presents some examples. (authors)

  6. Crystal orientation effects on helium ion depth distributions and adatom formation processes in plasma-facing tungsten

    International Nuclear Information System (INIS)

    Hammond, Karl D.; Wirth, Brian D.

    2014-01-01

    We present atomistic simulations that show the effect of surface orientation on helium depth distributions and surface feature formation as a result of low-energy helium plasma exposure. We find a pronounced effect of surface orientation on the initial depth of implanted helium ions, as well as a difference in reflection and helium retention across different surface orientations. Our results indicate that single helium interstitials are sufficient to induce the formation of adatom/substitutional helium pairs under certain highly corrugated tungsten surfaces, such as (1 1 1)-orientations, leading to the formation of a relatively concentrated layer of immobile helium immediately below the surface. The energies involved for helium-induced adatom formation on (1 1 1) and (2 1 1) surfaces are exoergic for even a single adatom very close to the surface, while (0 0 1) and (0 1 1) surfaces require two or even three helium atoms in a cluster before a substitutional helium cluster and adatom will form with reasonable probability. This phenomenon results in much higher initial helium retention during helium plasma exposure to (1 1 1) and (2 1 1) tungsten surfaces than is observed for (0 0 1) or (0 1 1) surfaces and is much higher than can be attributed to differences in the initial depth distributions alone. The layer thus formed may serve as nucleation sites for further bubble formation and growth or as a source of material embrittlement or fatigue, which may have implications for the formation of tungsten “fuzz” in plasma-facing divertors for magnetic-confinement nuclear fusion reactors and/or the lifetime of such divertors.

  7. Endothelial cell adhesion to ion implanted polymers

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Y; Kusakabe, M [SONY Corp., Tokyo (Japan); Lee, J S; Kaibara, M; Iwaki, M; Sasabe, H [RIKEN (Inst. of Physical and Chemical Research), Saitama (Japan)

    1992-03-01

    The biocompatibility of ion implanted polymers has been studied by means of adhesion measurements of bovine aorta endothelial cells in vitro. The specimens used were polystyrene (PS) and segmented polyurethane (SPU). Na{sup +}, N{sub 2}{sup +}, O{sub 2}{sup +} and Kr{sup +} ion implantations were performed at an energy of 150 keV with fluences ranging from 1x10{sup 15} to 3x10{sup 17} ions/cm{sup 2} at room temperature. The chemical and physical structures of ion-implanted polymers have been investigated in order to analyze their tissue compatibility such as improvement of endothelial cell adhesion. The ion implanted SPU have been found to exhibit remarkably higher adhesion and spreading of endothelial cells than unimplanted specimens. By contrast, ion implanted PS demonstrated a little improvement of adhesion of cells in this assay. Results of FT-IR-ATR showed that ion implantation broke the original chemical bond to form new radicals such as OH, ....C=O, SiH and condensed rings. The results of Raman spectroscopy showed that ion implantation always produced a peak near 1500 cm{sup -1}, which indicated that these ion implanted PS and SPU had the same carbon structure. This structure is considered to bring the dramatic increase in the extent of cell adhesion and spreading to these ion implanted PS and SPU. (orig.).

  8. Electrochemical properties of ion implanted silicon

    International Nuclear Information System (INIS)

    Pham minh Tan.

    1979-11-01

    The electrochemical behaviour of ion implanted silicon in contact with hydrofluoric acid solution was investigated. It was shown that the implanted layer on silicon changes profoundly its electrochemical properties (photopotential, interface impedance, rest potential, corrosion, current-potential behaviour, anodic dissolution of silicon, redox reaction). These changes depend strongly on the implantation parameters such as ion dose, ion energy, thermal treatment and ion mass and are weakly dependent on the chemical nature of the implantation ion. The experimental results were evaluated and interpreted in terms of the semiconductor electrochemical concepts taking into account the interaction of energetic ions with the solid surface. The observed effects are thus attributed to the implantation induced damage of silicon lattice and can be used for profiling of the implanted layer and the electrochemical treatment of the silicon surface. (author)

  9. Imprints from the solar cycle on the helium atom and helium pickup ion distributions

    Directory of Open Access Journals (Sweden)

    D. Rucinski

    Full Text Available Neutral interstellar helium atoms penetrate into the solar system almost unaffected by gas–plasma interactions in the heliospheric interface region, and thus can be considered as carriers of original information on the basic parameters (like density, temperature, bulk velocity of the Very Local Interstellar Medium (VLISM. Such information can nowadays be derived from analysis of data obtained from different experimental methods: in situ measurements of He atoms (Ulysses, observations of the solar backscattered He 584 A radiation (EUVE, in situ measurements of He + pickup ions (AMPTE, Ulysses, Wind, SOHO, ACE. In view of the current coordinated international ISSI campaign devoted to the study of the helium focusing cone structure and its evolution, we analyze expected variations of neutral He density, of He + pickup fluxes and of their phase space distributions at various phases of the solar activity cycle based on a realistic time-dependent modelling of the neutral helium and He + pickup ion distributions, which reflect solar cycle-induced variations of the photoionization rate. We show that the neutral helium density values are generally anticorrelated with the solar activity phase and in extreme cases (near the downwind axis the maximum-to-minimum density ratio may even exceed factors of ~ 3 at 1 AU. We also demonstrate that in the upwind hemisphere (at 1 AU and beyond the He + fluxes are correlated with the solar cycle activity, whereas on the downwind side the maximum of the expected flux up to distances of ~ 3 AU occurs around solar minimum epoch, and only further away does the correlation with solar activity become positive. Finally, we present the response of the phase space distribution spectra of He + pickup ions (in the solar wind frame for different epochs of the solar cycle and heliocentric distances from 1 to 5 AU covering the range of Ulysses, Wind and ACE observations.

    Key words. Solar physics, astrophysics and astronomy

  10. Imprints from the solar cycle on the helium atom and helium pickup ion distributions

    Directory of Open Access Journals (Sweden)

    D. Rucinski

    2003-06-01

    Full Text Available Neutral interstellar helium atoms penetrate into the solar system almost unaffected by gas–plasma interactions in the heliospheric interface region, and thus can be considered as carriers of original information on the basic parameters (like density, temperature, bulk velocity of the Very Local Interstellar Medium (VLISM. Such information can nowadays be derived from analysis of data obtained from different experimental methods: in situ measurements of He atoms (Ulysses, observations of the solar backscattered He 584 A radiation (EUVE, in situ measurements of He + pickup ions (AMPTE, Ulysses, Wind, SOHO, ACE. In view of the current coordinated international ISSI campaign devoted to the study of the helium focusing cone structure and its evolution, we analyze expected variations of neutral He density, of He + pickup fluxes and of their phase space distributions at various phases of the solar activity cycle based on a realistic time-dependent modelling of the neutral helium and He + pickup ion distributions, which reflect solar cycle-induced variations of the photoionization rate. We show that the neutral helium density values are generally anticorrelated with the solar activity phase and in extreme cases (near the downwind axis the maximum-to-minimum density ratio may even exceed factors of ~ 3 at 1 AU. We also demonstrate that in the upwind hemisphere (at 1 AU and beyond the He + fluxes are correlated with the solar cycle activity, whereas on the downwind side the maximum of the expected flux up to distances of ~ 3 AU occurs around solar minimum epoch, and only further away does the correlation with solar activity become positive. Finally, we present the response of the phase space distribution spectra of He + pickup ions (in the solar wind frame for different epochs of the solar cycle and heliocentric distances from 1 to 5 AU covering the range of Ulysses, Wind and ACE observations.Key words. Solar physics, astrophysics and astronomy

  11. Ion source based on Penning discharge for production of doubly charged helium ions

    Directory of Open Access Journals (Sweden)

    V. I. Voznyi

    2017-11-01

    Full Text Available The article presents the results of operation of ion source with Penning discharge developed in the IAP of NAS of Ukraine to produce doubly charged helium ions He2+ beam and to increase the energy of accelerated ions up to 3.2 MeV. This energy is necessary for ERDA channel when measuring hydrogen concentration in the structural materials used in nuclear engineering. The ion source parameters are the following: discharge voltage is 6 kV, discharge current is 0.8 - 1.2 mA, the current of singly charged helium ions He+ 24 μA, the current of doubly charged helium ions He2+ 0.5 μA.

  12. Neovascular glaucoma after helium ion irradiation for uveal melanoma

    International Nuclear Information System (INIS)

    Kim, M.K.; Char, D.H.; Castro, J.L.; Saunders, W.M.; Chen, G.T.; Stone, R.D.

    1986-01-01

    Neovascular glaucoma developed in 22 of 169 uveal melanoma patients treated with helium ion irradiation. Most patients had large melanomas; no eyes containing small melanomas developed anterior segment neovascularization. The mean onset of glaucoma was 14.1 months (range, 7-31 months). The incidence of anterior segment neovascularization increased with radiation dosage; there was an approximately three-fold increase at 80 GyE versus 60 GyE of helium ion radiation (23% vs. 8.5%) (P less than 0.05). Neovascular glaucoma occurred more commonly in larger tumors; the incidence was not affected by tumor location, presence of subretinal fluid, nor rate of tumor regression. Fifty-three percent of patients had some response with intraocular pressures of 21 mmHg or less to a combination of antiglaucoma treatments

  13. Mutagenic effects of ion implantation on stevia

    International Nuclear Information System (INIS)

    Wang Cailian; Shen Mei; Chen Qiufang; Lu Ting; Shu Shizhen

    1998-01-01

    Dry seeds of Stevia were implanted by 75 keV nitrogen and carbon ions with various doses. The biological effects in M 1 and mutation in M 2 were studied. The results showed that ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with ion beam dose. The rate of cells with chromosomal aberration was lower than that induced with γ-rays. Frequency of the mutation induced by implantation of N + and C + ions were higher than those induced by γ-rays. The rate of cell with chromosome aberration and in M 2 useful mutation induced by implantation of C + ion was higher than those induced by implantation of N + ion. Mutagenic effects Feng 1 x Riyuan and Riyuan x Feng 2 by implantation of N + and C + were higher than that of Jining and Feng 2

  14. High-energy ion implantation of materials

    International Nuclear Information System (INIS)

    Williams, J.M.

    1991-11-01

    High-energy ion implantation is an extremely flexible type of surface treatment technique, in that it offers the possibility of treating almost any type of target material or product with ions of almost any chemical species, or combinations of chemical species. In addition, ion implantations can be combined with variations in temperature during or after ion implantation. As a result, the possibility of approaching a wide variety of surface-related materials science problems exists with ion implantation. This paper will outline factors pertinent to application of high-energy ion implantation to surface engineering problems. This factors include fundamental advantages and limitations, economic considerations, present and future equipment, and aspects of materials science

  15. Reflection of slow hydrogen and helium ions from solid surfaces

    International Nuclear Information System (INIS)

    Akkerman, A.F.

    1978-01-01

    Some characteristics of the proton and helium ion flux (E < 10 keV), reflected from solid surfaces are presented. A 'condensed walk' scheme, previously used for electron transport calculations, was adapted. Results obtained either by the scheme or by a more detailed 'consequent' scheme agreed closely. The presented data permit calculations of the mean energy of reflected particles and other values for various energy and angular distributions of incident particles. (author)

  16. TEM investigation of the microstructural evolution in nickel during MeV helium implantation

    International Nuclear Information System (INIS)

    Gadalla, A.A.; Jaeger, W.; Ehrhart, P.

    1986-01-01

    In a recent TEM investigation of high energy He-implanted copper the low average helium density could be understood by the observation of the coexistence of two types of vacancy agglomerates i.e. relaxed vacancy agglomerates in the form of stacking fault tetrahedra (SFT) and small bubbles. In order to arrive at a more systematic understanding of the evolution of the microstructure during high energy helium implantation we extended these TEM investigations to nickel. Of particular interest was also the minimum implantation dose necessary to precipitate bubbles that are large enough to be visible in the TEM. (orig./RK)

  17. Four-body conversion of atomic helium ions

    International Nuclear Information System (INIS)

    de Vries, C.P.; Oskam, H.J.

    1980-01-01

    The conversion of atomic helium ions into molecular ions was studied in pure helium and in helium-neon mixtures containing between 0.1 at. % and 50 at. % neon. The experiments showed that the termolecular conversion reaction, He + +2He → He 2 + +He, is augmented by the four-body conversion reaction He + +3He → products, where the products could include either He 2 + or He 3 + ions. Conversion rate coefficients of (5.7 +- 0.8) x 10 -32 cm 6 sec -1 and (2.6 +- 0.4) x 10 -49 cm 9 sec -1 were found for the termolecular and four-body conversion reactions, respectively. In addition, rate coefficients for the following Ne + conversion reactions were measured: Ne + +He+He → (HeNe) + +He, (2.3 +- 0.1) x 10 -32 cm 6 sec -1 ; Ne + +He+Ne → (HeNe) + +Ne or Ne 2 + +He, (8.0 +- 0.8) x 10 -32 cm 6 sec -1 ; and Ne + +Ne+Ne → Ne 2 + +Ne, (5.1 +- 0.3) x 10 -32 cm 6 sec -1 . All rate coefficients are at a gas temperature of 295 K

  18. Damage studies on tungsten due to helium ion irradiation

    International Nuclear Information System (INIS)

    Dutta, N.J.; Buzarbaruah, N.; Mohanty, S.R.

    2014-01-01

    Highlights: • Used plasma focus helium ion source to study radiation induced damage on tungsten. • Surface analyses confirm formation of micro-crack, bubbles, blisters, pinholes, etc. • XRD patterns confirm development of compressive stress due to thermal load. • Reduction in hardness value is observed in the case of exposed sample. - Abstract: Energetic and high fluence helium ions emitted in a plasma focus device have been used successfully to study the radiation induced damage on tungsten. The reference and irradiated samples were characterized by optical microscopy, field emission scanning electron microscopy, X-ray diffraction and by hardness testers. The micrographs of the irradiated samples at lower magnification show uniform mesh of cracks of micrometer width. However at higher magnification, various types of crystalline defects such as voids, pinholes, bubbles, blisters and microcracks are distinctly noticed. The prominent peaks in X-ray diffraction spectrum of irradiated samples are seen shifted toward higher Bragg angles, thus indicating accumulation of compressive stress due to the heat load delivered by helium ions. A marginal reduction in hardness of the irradiated sample is also noticed

  19. Wettability control of polystyrene by ion implantation

    International Nuclear Information System (INIS)

    Suzuki, Yoshiaki; Kusakabe, Masahiro; Iwaki, Masaya

    1994-01-01

    The permanent effects of ion implantation on the improvement of wettability of polystyrene is investigated in relation to ion species and fluences. The He + , Ne + , Na + , N 2 + , O 2 + , Ar + , K + and Kr + ion implantations were performed at energies of 50 and 150 keV at room temperature. The fluences ranged from 1x10 15 to 1x10 17 ions/cm 2 . The results showed that the contact angle of water for Na + and K + implanted polystyrene decreased from 87 to 0 , as the fluences increased to 1x10 17 ions/cm 2 at an energy of 50 keV. The contact angle for Na + and K + implanted polystyrene did not change under ambient room conditions, even when time elapsed. However, the contact an gle for He + , C + , O + , Ne + , N 2 + , O 2 + , Ar + , and Kr + ion implanted specimens decreased slightly immediately after ion implantation. Results of X-ray photoelectron spectroscopy showed that the increase in the Na content in the surface of Na + implanted specimens were observed with increasing fluence. It is concluded that permanent improvement in wettability was caused by doping effects rather than by radiation effects from Na + and K + ion implantation. ((orig.))

  20. Raman microprobe measurements of stress in ion implanted materials

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K W; Prawer, S; Weiser, P S; Dooley, S P [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1994-12-31

    Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

  1. Raman microprobe measurements of stress in ion implanted materials

    Energy Technology Data Exchange (ETDEWEB)

    Nugent, K.W.; Prawer, S.; Weiser, P.S.; Dooley, S.P. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1993-12-31

    Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

  2. Modification of metallic corrosion by ion implantation

    International Nuclear Information System (INIS)

    Clayton, C.R.

    1981-01-01

    This review will consider some of the properties of surface alloys, formed by ion implantation, which are effective in modifying corrosion behaviour. Examples will be given of the modification of the corrosion behaviour of pure metals, steels and other engineering alloys, resulting from implantation with metals and metalloids. Emphasis will be given to the modification of anodic processes produced by ion implantation since a review will be given elsewhere in the proceedings concerning the modification of cathodic processes. (orig.)

  3. Preservation and release dose of helium implanted in nanocrystal titanium film

    International Nuclear Information System (INIS)

    Long Xinggui; Luo Shunzhong; Peng Shuming; Zheng Sixiao; Liu Zhongyang; Wang Peilu; Liao Xiaodong; Liu Ning

    2003-01-01

    Helium concentration profile, preservation dose and release rate from a nanocrystal titanium film implanted with helium at an energy of 100 keV and dose of 2.2 x 10 18 cm -2 are measured by proton Rutherford backscattering technique in a range from room temperature to 400 degree C. The implanted helium may be stably preserved up to the 68 percent after keeping a long time of 210 d in the nanocrystal titanium film at the room temperature environment, and the He-Ti atomic ratio reaches to 52.6%. When the temperature of specimen increases to 100 degree C, the helium concentration can be preserved to 89.6% of the keeping helium dose at room temperature and He-Ti atomic ratio reaches 44%. Even if the specimen temperature up to 400 degree C, the helium concentration still can be preserved to 32.6% of the keeping helium dose at room temperature and the He-Ti atomic ratio is 17.1%. Possible mechanism of helium effectively preserved in the nanocrystal titanium film is discussed based on the energy stability viewpoint

  4. Ion implantation as an efficient surface treatment

    International Nuclear Information System (INIS)

    Straede, C.A.

    1992-01-01

    Ion beam processing has for several years been well established in the semiconductor industry. In recent years ion implantation of tool steels, ceramics and even plastics has gained increasing industrial awareness. The development of ion implantation to a commercially viable surface treatment of tools and spare parts working in production type environments is very dependent on technical merits, economic considerations, competing processes and highly individual barriers to acceptance for each particular application. Some examples of this will be discussed. The development of the process is very closely linked with the development of high current accelerators and their ability to efficiently manipulate the samples being treated, or to make sample manipulation superfluous by using special beam systems like the PSII. Furthermore, the ability to produce high beam currents (mA) of a wide variety of ions is crucial. Previously, it was broadly accepted that ion implantation of tools on a commercial basis generally had to be limited to nitrogen implantation. The development of implanters which can produce high beam currents of ions like B + , C + , Ti + , Cr + and others is rapidly changing this situation, and today an increasing number of commercial implantations are performed with these ions although nitrogen is still successfully used in the majority of commercial implantation. All in all, the recent development of equipment makes it possible to a higher extent than before to tailor the implantation to a specific situation. The emerging new possibilities in this direction will be discussed, and a broad selection of practical examples of ion implantation at standard low temperatures of tools and spare parts will be given. Furthermore, very interesting results have been obtained recently by implanting nitrogen at elevated temperatures, which yields a relatively deep penetration of the implanted ions. (orig./WL)

  5. Long range implantation by MEVVA metal ion source

    International Nuclear Information System (INIS)

    Zhang Tonghe; Wu Yuguang; Ma Furong; Liang Hong

    2001-01-01

    Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion implantation. It is very important for research and application of the ion beam modification of materials. The results show that the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux and high dose. The implanted depth is 311.6 times greater than that of the corresponding ion range. The ion species, doses and ion fluxes play an important part in the long-range implantation. Especially, thermal atom chemistry have specific effect on the long-range implantation during high ion flux implantation at transient high target temperature

  6. Nitrogen implantation in steel with an impulsive ion implanter

    International Nuclear Information System (INIS)

    Feugeas, J.N.; Gonzalez, C.O.; Hermida, J.; Nieto, M.; Peyronel, M.F.; Sanchez, G.

    1990-01-01

    This work describes the results of steel implantation with nitrogen, with a pulsed accelerator which provides a continuous ion energy spectrum giving a uniform profile of nitrogen without changing its operative conditions. (Author)

  7. Channeling in helium ion microscopy: Mapping of crystal orientation

    Directory of Open Access Journals (Sweden)

    Vasilisa Veligura

    2012-07-01

    Full Text Available Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur.Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict channeling maxima.Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.

  8. Design for a low temperature ion implantation and luminescence cryostat

    International Nuclear Information System (INIS)

    Noonan, J.R.; Kirkpatrick, C.G.; Myers, D.R.; Streetman, B.G.

    1976-01-01

    Several simple design changes of a conventional liquid helium optical Dewar can significantly improve the cryostat's versatility for use in low temperature particle irradiation. A bellows assembly provides precise sample positioning and allows convenient access for electrical connections. A heat exchanger consisting of thin walled tubing with a 'goose neck' bend provides a simple, effective means of cooling the sample as well as excellent thermal isolation of the sample holder from the coolant reservoir during controlled anneals. The addition of a vane-type vacuum valve, optical windows, and a rotatable tailpiece facilitates the study of optical properties of materials following low temperature ion implantation. (author)

  9. Effect of helium on swelling and microstructural evolution in ion-irradiated V-15Cr-5Ti alloy

    International Nuclear Information System (INIS)

    Loomis, B.A.; Kestel, B.J.; Gerber, S.B.; Ayrault, G.

    1986-03-01

    An investigation was made on the effects of implanted helium on the swelling and microstructural evolution that results from energetic single- and dual-ion irradiation of the V-15Cr-5Ti alloy. Single-ion irradiations were utilized for a simulated production of the irradiation damage that might be expected from neutron irradiation of the alloy in a reactor with a fast neutron energy spectrum (E > 0.1 MeV). Dual-ion irradiations were utilized for a simulated production of the simultaneous creation of helium atoms and irradiation damage in the alloy in the MFR environment. Experimental results are also presented on the radiation-induced segregation of the constituent atoms in the single- and dual-ion irradiated alloy

  10. Metal ion implantation: Conventional versus immersion

    International Nuclear Information System (INIS)

    Brown, I.G.; Anders, A.; Anders, S.; Dickinson, M.R.; MacGill, R.A.

    1994-01-01

    Vacuum-arc-produced metal plasma can be used as the ion feedstock material in an ion source for doing conventional metal ion implantation, or as the immersing plasma for doing plasma immersion ion implantation. The basic plasma production method is the same in both cases; it is simple and efficient and can be used with a wide range of metals. Vacuum arc ion sources of different kinds have been developed by the authors and others and their suitability as a metal ion implantation tool has been well established. Metal plasma immersion surface processing is an emerging tool whose characteristics and applications are the subject of present research. There are a number of differences between the two techniques, both in the procedures used and in the modified surfaces created. For example, the condensibility of metal plasma results in thin film formation and subsequent energetic implantation is thus done through the deposited layer; in the usual scenario, this recoil implantation and the intermixing it produces is a feature of metal plasma immersion but not of conventional energetic ion implantation. Metal plasma immersion is more suited (but not limited) to higher doses (>10 17 cm -2 ) and lower energies (E i < tens of keV) than the usual ranges of conventional metal ion implantation. These and other differences provide these vacuum-arc-based surface modification tools with a versatility that enhances the overall technological attractiveness of both

  11. submitter Data-driven RBE parameterization for helium ion beams

    CERN Document Server

    Mairani, A; Dokic, I; Valle, S M; Tessonnier, T; Galm, R; Ciocca, M; Parodi, K; Ferrari, A; Jäkel, O; Haberer, T; Pedroni, P; Böhlen, T T

    2016-01-01

    Helium ion beams are expected to be available again in the near future for clinical use. A suitable formalism to obtain relative biological effectiveness (RBE) values for treatment planning (TP) studies is needed. In this work we developed a data-driven RBE parameterization based on published in vitro experimental values. The RBE parameterization has been developed within the framework of the linear-quadratic (LQ) model as a function of the helium linear energy transfer (LET), dose and the tissue specific parameter ${{(\\alpha /\\beta )}_{\\text{ph}}}$ of the LQ model for the reference radiation. Analytic expressions are provided, derived from the collected database, describing the $\\text{RB}{{\\text{E}}_{\\alpha}}={{\\alpha}_{\\text{He}}}/{{\\alpha}_{\\text{ph}}}$ and ${{\\text{R}}_{\\beta}}={{\\beta}_{\\text{He}}}/{{\\beta}_{\\text{ph}}}$ ratios as a function of LET. Calculated RBE values at 2 Gy photon dose and at 10% survival ($\\text{RB}{{\\text{E}}_{10}}$ ) are compared with the experimental ones. Pearson's correlati...

  12. Ion implantation and fracture toughness of ceramics

    International Nuclear Information System (INIS)

    Clark, J.; Pollock, J.T.A.

    1985-01-01

    Ceramics generally lack toughness which is largely determined by the ceramic surface where stresses likely to cause failure are usually highest. Ion implantation has the capacity to improve the surface fracture toughness of ceramics. Significantly reduced ion size and reactivity restrictions exist compared with traditional methods of surface toughening. We are studying the effect of ion implantation on ceramic fracture toughness using indentation testing as the principal tool of analysis

  13. Annealing dislocation loops in OKh16N15M3T steel implanted by helium

    International Nuclear Information System (INIS)

    Utkelbaev, B.D.; Reutov, V.F.; Zhdan, G.T.

    1993-01-01

    With the use of electron microscopy a study was made into the influence of preliminary thermomechanical treatment on the process of dislocation loop development in austenitic stainless steel type OKh16N15M3T with helium on annealing. Preliminary treatment was shown to prevent dislocation loop formation to a greater or lesser extent. Preliminary 'cold' working and thermal ageing of the material are the most effective ways to suppress radiation defect formation when annealing helium implanted steel

  14. Applications of ion implantation for modifying the interactions between metals and hydrogen gas

    Science.gov (United States)

    Musket, R. G.

    1989-04-01

    Ion implantations into metals have been shown recently to either reduce or enhance interactions with gaseous hydrogen. Published studies concerned with modifications of these interactions are reviewed and discussed in terms of the mechanisms postulated to explain the observed changes. The interactions are hydrogenation, hydrogen permeation, and hydrogen embrittlement. In particular, the results of the reviewed studies are (a) uranium hydriding suppressed by implantation of oxygen and carbon, (b) hydrogen gettered in iron and nickel using implantation of titanium, (c) hydriding of titanium catalyzed by implanted palladium, (d) tritium permeation of 304L stainless steel reduced using selective oxidation of implanted aluminum, and (e) hydrogen attack of a low-alloy steel accelerated by implantation of helium. These studies revealed ion implantation to be an effective method for modifying the interactions of hydrogen gas with metals.

  15. Applications of ion implantation for modifying the interactions between metals and hydrogen gas

    International Nuclear Information System (INIS)

    Musket, R.G.

    1989-01-01

    Ion implantations into metals have been shown recently to either reduce or enhance interactions with gaseous hydrogen. Published studies concerned with modifications of these interactions are reviewed and discussed in terms of the mechanisms postulated to explain the observed changes. The interactions are hydrogenation, hydrogen permeation and hydrogen embrittlement. In particular, the results of the reviewed studies are 1. uranium hydriding suppressed by implantation of oxygen and carbon, 2. hydrogen gettered in iron and nickel using implantation of titanium, 3. hydriding of titanium catalyzed by implanted palladium, 4. tritium permeation of 304L stainless steel reduced using selective oxidation of implanted aluminum, and 5. hydrogen attack of a low-alloy steel accelerated by implantation of helium. These studies revealed ion implantation to be an effective method for modifying the interactions of hydrogen gas with metals. (orig.)

  16. Amorphization of metals by ion implantation and ion beam mixing

    International Nuclear Information System (INIS)

    Rauschenbach, B.; Heera, V.

    1988-01-01

    Amorphous metallic systems can be formed either by high-fluence ion implantation of glassforming species or by irradiation of layered metal systems with inert gas ions. Both techniques and experimental examples are presented. Empirical rules are discussed which predict whether a given system can be transformed into an amorphous phase. Influence of temperature, implantation dose and pre-existing crystalline metal composition on amorphization is considered. Examples are given of the implantation induced amorphous structure, recrystallization and formation of quasicrystalline structures. (author)

  17. High energy ion implantation for IC processing

    International Nuclear Information System (INIS)

    Oosterhoff, S.

    1986-01-01

    In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

  18. Versatile high current metal ion implantation facility

    International Nuclear Information System (INIS)

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

    1992-01-01

    A metal ion implantation facility has been developed with which high current beams of practically all the solid metals of the periodic table can be produced. A multicathode, broad-beam, metal vapor vacuum arc ion source is used to produce repetitively pulsed metal ion beams at an extraction voltage of up to 100 kV, corresponding to an ion energy of up to several hundred kiloelectronvolts because of the ion charge state multiplicity, and with a beam current of up to several amps peak pulsed and several tens of milliamps time averaged delivered onto a downstream target. Implantation is done in a broad-beam mode, with a direct line of sight from ion source to target. Here we summarize some of the features of the ion source and the implantation facility that has been built up around it. (orig)

  19. Electron capture by fast protons from helium-like ions

    International Nuclear Information System (INIS)

    Samanta, R.; Purkait, M.

    2011-01-01

    Four-body formalism of boundary corrected continuum intermediate state (BCCIS-4B) approximation have been applied to calculate the single-electron capture cross sections by fast protons through some helium-like ions in a large energy range from 30-1000 keV. In this model, distortion has been taken into account in the entrance channel. In the final channel, the passive electron plays the role of screening of the target ion. However, continuum states of the projectile and the electron in the field of the residual target ion are included. The comparison of the results is made with those of other theoretical investigations and experimental findings. The present calculated results are found to be in good agreement with the available experimental findings. (authors)

  20. Some aspects of ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Klose, H.

    1982-01-01

    The advantages and disadvantages of ion implantation in the application of semiconductor technology are reviewed in short. This article describes some aspects of the state of the art and current developments of nonconventional annealing procedures, ion beam gettering of deep impurities, special applications of ion implantation using low or high energy ions and GaAs-electronics, respectively. Radiation defects in Si and the nonexponential emission and capture processes in GaAsP are discussed. Final future trends of ion beam methods in semiconductor production technology are summarized. (author)

  1. Ion implantation methods for semiconductor substrates

    International Nuclear Information System (INIS)

    Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

    1980-01-01

    A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

  2. High resolution helium ion scanning microscopy of the rat kidney.

    Directory of Open Access Journals (Sweden)

    William L Rice

    Full Text Available Helium ion scanning microscopy is a novel imaging technology with the potential to provide sub-nanometer resolution images of uncoated biological tissues. So far, however, it has been used mainly in materials science applications. Here, we took advantage of helium ion microscopy to explore the epithelium of the rat kidney with unsurpassed image quality and detail. In addition, we evaluated different tissue preparation methods for their ability to preserve tissue architecture. We found that high contrast, high resolution imaging of the renal tubule surface is possible with a relatively simple processing procedure that consists of transcardial perfusion with aldehyde fixatives, vibratome tissue sectioning, tissue dehydration with graded methanol solutions and careful critical point drying. Coupled with the helium ion system, fine details such as membrane texture and membranous nanoprojections on the glomerular podocytes were visualized, and pores within the filtration slit diaphragm could be seen in much greater detail than in previous scanning EM studies. In the collecting duct, the extensive and striking apical microplicae of the intercalated cells were imaged without the shrunken or distorted appearance that is typical with conventional sample processing and scanning electron microscopy. Membrane depressions visible on principal cells suggest possible endo- or exocytotic events, and central cilia on these cells were imaged with remarkable preservation and clarity. We also demonstrate the use of colloidal gold probes for highlighting specific cell-surface proteins and find that 15 nm gold labels are practical and easily distinguishable, indicating that external labels of various sizes can be used to detect multiple targets in the same tissue. We conclude that this technology represents a technical breakthrough in imaging the topographical ultrastructure of animal tissues. Its use in future studies should allow the study of fine cellular details

  3. A pencil beam algorithm for helium ion beam therapy

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, Hermann; Stroebele, Julia; Schreiner, Thomas; Hirtl, Albert; Georg, Dietmar [Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); PEG MedAustron, 2700 Wiener Neustadt (Austria); Department of Nuclear Medicine, Medical University of Vienna, 1090 Vienna (Austria); Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria)

    2012-11-15

    Purpose: To develop a flexible pencil beam algorithm for helium ion beam therapy. Dose distributions were calculated using the newly developed pencil beam algorithm and validated using Monte Carlo (MC) methods. Methods: The algorithm was based on the established theory of fluence weighted elemental pencil beam (PB) kernels. Using a new real-time splitting approach, a minimization routine selects the optimal shape for each sub-beam. Dose depositions along the beam path were determined using a look-up table (LUT). Data for LUT generation were derived from MC simulations in water using GATE 6.1. For materials other than water, dose depositions were calculated by the algorithm using water-equivalent depth scaling. Lateral beam spreading caused by multiple scattering has been accounted for by implementing a non-local scattering formula developed by Gottschalk. A new nuclear correction was modelled using a Voigt function and implemented by a LUT approach. Validation simulations have been performed using a phantom filled with homogeneous materials or heterogeneous slabs of up to 3 cm. The beams were incident perpendicular to the phantoms surface with initial particle energies ranging from 50 to 250 MeV/A with a total number of 10{sup 7} ions per beam. For comparison a special evaluation software was developed calculating the gamma indices for dose distributions. Results: In homogeneous phantoms, maximum range deviations between PB and MC of less than 1.1% and differences in the width of the distal energy falloff of the Bragg-Peak from 80% to 20% of less than 0.1 mm were found. Heterogeneous phantoms using layered slabs satisfied a {gamma}-index criterion of 2%/2mm of the local value except for some single voxels. For more complex phantoms using laterally arranged bone-air slabs, the {gamma}-index criterion was exceeded in some areas giving a maximum {gamma}-index of 1.75 and 4.9% of the voxels showed {gamma}-index values larger than one. The calculation precision of the

  4. Double ionization of atomic helium under heavy ion impact

    International Nuclear Information System (INIS)

    Presnyakov, L.P.; Uskov, D.B.

    1995-01-01

    Cross sections for double ionization of helium by multiply-charged ion impact and the corresponding ratios of double-to-single ionization are presented as a sum of the contributions given by the one-step (shake-off) and two-step (TS) processes. An analytic form is found for the continuum wavefunction which is valid in both limiting cases of low and high velocities of the relative motion. Using this wavefunction, the TS cross sections are calculated within the independent-event model. The results for the ratios of double-to-single ionization show satisfactory agreement with the experimental data available. (author)

  5. Surface modification of metals by ion implantation

    International Nuclear Information System (INIS)

    Iwaki, Masaya

    1988-01-01

    Ion implantation in metals has attracted the attention as a useful technology for the formation of new metastable alloys and compounds in metal surface layers without thermal equilibrium. Current studies of metal surface modification by ion implantation with high fluences have expanded from basic research areas and to industrial applications for the improvement of life time of tools. Many results suggest that the high fluence implantation produces the new surface layers with un-expected microscopic characteristics and macroscopic properties due to implant particles, radiation damage, sputtering, and knock-on doping. In this report, the composition, structure and chemical bonding state in surface layers of iron, iron-based alloy and aluminum sheets implanted with high fluences have been investigated by means of secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Tribological properties such as hardness, friction and wear are introduced. (author)

  6. Thermal release behavior of helium from copper irradiated by He+ ions

    International Nuclear Information System (INIS)

    Yamauchi, T.; Tokura, S.; Yamanaka, S.; Miyake, M.

    1988-01-01

    Thermal release behavior of helium from copper irradiated by 20 keV He + ions with a dose of 2x10 15 to 3x10 17 ions/cm 2 has been studied. The shape of the thermal release curves and thew number of helium release peaks strongly depend on the irradiation dose. Results from SEM surface observastion after post-irradiation heating suggested that helium release caused various surface damages such as blistering, flaking, and hole formation. Helium release resulting in small holes was analyzed and helium bubble growth mechanisms are discussed. (orig.)

  7. Flaking and wave-like structure on metallic glasses induced by MeV-energy helium ions

    International Nuclear Information System (INIS)

    Paszti, F.; Fried, M.; Pogany, L.; Manuaba, A.; Mezey, G.; Kotai, E.; Lovas, I.; Lohner, T.; Pocs, L.

    1982-11-01

    Ten samples prepared from different kinds of metallic glasses (different in composition and manufacturing technology) were bombarded by 2 or 1 MeV helium ions with high fluence under different experimental circumstances. During bombardment the temperature increase of the samples caused by irradiation heating was estimated and kept below the temperature needed for the investigated metallic glass to be crystallized. In all cases the surface deformation processes were dominated by flaking i.e. nearly from the whole implanted area a layer suddenly flaked off with a uniform thickness of the applied ion projected range. The surface left behind the flaked layer can be characterized by a wave-like structure i.e. by a regular series of asymmetrical elevations. These elevations, which did not appear on the annealed samples, are caused by a mechanism developed during the bombardment of the amorphous structure (of metallic glasses) by high energy helium ions. Details of this unusual phenomenon are discussed. (author)

  8. Extended defects and hydrogen interactions in ion implanted silicon

    Science.gov (United States)

    Rangan, Sanjay

    The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

  9. Semiconductor applications of plasma immersion ion implantation ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 25; Issue 6. Semiconductor applications of plasma immersion ion implantation technology ... Department of Electronic Science, Kurukshetra University, Kurukshetra 136 119, India ...

  10. Silicon technologies ion implantation and thermal treatment

    CERN Document Server

    Baudrant, Annie

    2013-01-01

    The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

  11. Ion Implantation Processing Technologies for Telecommunications Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Haynes, T E

    2000-05-01

    The subject CRADA was a collaboration between Oak Ridge National Laboratory and Bell Laboratories, Lucent Technologies (formerly AT and T Bell Laboratories) to explore the development of ion implantation technologies for silicon integrated circuit (IC) manufacturing.

  12. Laser annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    White, C.W.; Narayan, J.; Young, R.T.

    1978-11-01

    The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit

  13. Magnetoreflection studies of ion implanted bismuth

    International Nuclear Information System (INIS)

    Nicolini, C.; Chieu, T.C.; Dresselhaus, M.S.; Massachusetts Inst. of Tech., Cambridge; Dresselhaus, G.

    1982-01-01

    The effect of the implantation of Sb ions on the electronic structure of the semimetal bismuth is studied by the magnetoreflection technique. The results show long electronic mean free paths and large implantation-induced increases in the band overlap and L-point band gap. These effects are opposite to those observed for Bi chemically doped with Sb. (author)

  14. Ion implantation of boron in germanium

    International Nuclear Information System (INIS)

    Jones, K.S.

    1985-05-01

    Ion implantation of 11 B + into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of 11 B + into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10 11 /cm 2 to 1 x 10 14 /cm 2 ) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses ( 12 /cm 2 ). Three damage related hole traps are produced by ion implantation of 11 B + . Two of these hole traps have also been observed in γ-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures ( 0 C). Boron, from room temperature implantation of BF 2 + into Ge, is not substitutionally active prior to a post implant annealing step of 250 0 C for 30 minutes. After annealing additional shallow acceptors are observed in BF 2 + implanted samples which may be due to fluorine or flourine related complexes which are electrically active

  15. Development of industrial ion implantation technology

    International Nuclear Information System (INIS)

    Choi, Byung Hoh; Jung, Kee Suk; Kim, Wan; Song, Woo Sub; Hwang, Chul Kyoo

    1994-02-01

    We developed an ion implanter fitted for the treatment of 12 inch or larger wafers to make 256 or higher Mega D-Ram wafers. Design features are dual usage of gas/solid for the ion source loading, production of multi-balanced ions, and the possible oxygen ion implantation. BOSII program was used for the ion optics calculation. Beams are triangularly scanned to wafers for the even implantation by a proper magnetic field application. More than 10 mA ion current is produced. For the efficient implantation to be made, target is made to rotate with tilted angle at a displaced axis. High speed tools, diamond tools, precision dies, and razor blades were implanted and the performance was evaluated after two or three times of line application. Of those materials studied, PCB drills and end mills are on the commercial treatment stages. Industrial materials as SKD-11, WC-Co, NAK-55 was compositely treated with ion beam and coating. Resultant properties were analyzed using AES, XRD, and TEM. For the case of xenon ions, excellent TiN coating resulted and its application to microcircuit lead frame increased the performance to more than 30 percent. 94 figs, 29 pix, 19 tabs, 50 refs. (Author)

  16. Development of industrial ion implantation technology

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Byung Hoh; Jung, Kee Suk; Kim, Wan; Song, Woo Sub; Hwang, Chul Kyoo [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1994-02-01

    We developed an ion implanter fitted for the treatment of 12 inch or larger wafers to make 256 or higher Mega D-Ram wafers. Design features are dual usage of gas/solid for the ion source loading, production of multi-balanced ions, and the possible oxygen ion implantation. BOSII program was used for the ion optics calculation. Beams are triangularly scanned to wafers for the even implantation by a proper magnetic field application. More than 10 mA ion current is produced. For the efficient implantation to be made, target is made to rotate with tilted angle at a displaced axis. High speed tools, diamond tools, precision dies, and razor blades were implanted and the performance was evaluated after two or three times of line application. Of those materials studied, PCB drills and end mills are on the commercial treatment stages. Industrial materials as SKD-11, WC-Co, NAK-55 was compositely treated with ion beam and coating. Resultant properties were analyzed using AES, XRD, and TEM. For the case of xenon ions, excellent TiN coating resulted and its application to microcircuit lead frame increased the performance to more than 30 percent. 94 figs, 29 pix, 19 tabs, 50 refs. (Author).

  17. Ion-implantation dense cascade data

    International Nuclear Information System (INIS)

    Winterbon, K.B.

    1983-04-01

    A tabulation is given of data useful in estimating various aspects of ion-implantation cascades in the nuclear stopping regime, particularly with respect to nonlinearity of the cascade at high energy densities. The tabulation is restricted to self-ion implantation. Besides power-cross-section cascade dimensions, various material properties are included. Scaling of derived quantities with input data is noted, so one is not limited to the values assumed by the author

  18. Direct nano-patterning of graphene with helium ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Naitou, Y., E-mail: yu-naitou@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Iijima, T.; Ogawa, S. [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-01-19

    Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO{sub 2}/Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He{sup +}). Doses of 2.0 × 10{sup 16 }He{sup + }cm{sup −2} from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He{sup +} in a non-monotonic fashion. Increasing the dose from 2.0 × 10{sup 16} to 5.0 × 10{sup 16 }He{sup + }cm{sup −2} improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 10{sup 17 }He{sup + }cm{sup −2} degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices.

  19. Precision, high dose radiotherapy: helium ion treatment of uveal melanoma

    Energy Technology Data Exchange (ETDEWEB)

    Saunders, W.M.; Char, D.H.; Quivey, J.M.; Castro, J.R.; Chen, G.T.Y.; Collier, J.M.; Cartigny, A.; Blakely, E.A.; Lyman, J.T.; Zink, S.R.

    1985-02-01

    The authors report on 75 patients with uveal melanoma who were treated by placing the Bragg peak of a helium ion beam over the tumor volume. The technique localizes the high dose region very tightly around the tumor volume. This allows critical structures, such as the optic disc and the macula, to be excluded from the high dose region as long as they are 3 to 4 mm away from the edge of the tumor. Careful attention to tumor localization, treatment planning, patient immobilization and treatment verification is required. With a mean follow-up of 22 months (3 to 60 months) the authors have had only five patients with a local recurrence, all of whom were salvaged with another treatment. Pretreatment visual acuity has generally been preserved as long as the tumor edge is at least 4 mm away from the macula and optic disc. The only serious complication to date has been an 18% incidence of neovascular glaucoma in the patients treated at our highest dose level. Clinical results and details of the technique are presented to illustrate potential clinical precision in administering high dose radiotherapy with charged particles such as helium ions or protons.

  20. Precision, high dose radiotherapy: helium ion treatment of uveal melanoma

    International Nuclear Information System (INIS)

    Saunders, W.M.; Char, D.H.; Quivey, J.M.

    1985-01-01

    The authors report on 75 patients with uveal melanoma who were treated by placing the Bragg peak of a helium ion beam over the tumor volume. The technique localizes the high dose region very tightly around the tumor volume. This allows critical structures, such as the optic disc and the macula, to be excluded from the high dose region as long as they are 3 to 4 mm away from the edge of the tumor. Careful attention to tumor localization, treatment planning, patient immobilization and treatment verification is required. With a mean follow-up of 22 months (3 to 60 months) the authors have had only five patients with a local recurrence, all of whom were salvaged with another treatment. Pretreatment visual acuity has generally been preserved as long as the tumor edge is at least 4 mm away from the macula and optic disc. The only serious complication to date has been an 18% incidence of neovascular glaucoma in the patients treated at our highest dose level. Clinical results and details of the technique are presented to illustrate potential clinical precision in administering high dose radiotherapy with charged particles such as helium ions or protons

  1. Direct nano-patterning of graphene with helium ion beams

    International Nuclear Information System (INIS)

    Naitou, Y.; Iijima, T.; Ogawa, S.

    2015-01-01

    Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO 2 /Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He + ). Doses of 2.0 × 10 16  He +  cm −2 from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He + in a non-monotonic fashion. Increasing the dose from 2.0 × 10 16 to 5.0 × 10 16  He +  cm −2 improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 10 17  He +  cm −2 degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices

  2. The TEXTOR helium self-pumping experiment: Design, plans, and supporting ion-beam data on helium retention in nickel

    International Nuclear Information System (INIS)

    Brooks, J.N.; Krauss, A.; Mattas, R.F.; Smith, D.L.; Nygren, R.E.; Doyle, B.L.; McGrath, R.T.; Walsh, D.; Dippel, K.H.; Finken, K.H.

    1990-01-01

    A proof-of-principle experiment to demonstrate helium self-pumping in a tokamak is being undertaken in TEXTOR. The experiment will use a helium self-pumping module installed in a modified ALT-I limiter head. The module consists of two, ∼25 x 25 cm 2 heated nickel alloy trapping plates, a nickel deposition filament array, and associated diagnostics. Between plasma shots a coating of ∼50 angstrom nickel will be deposited on the two trapping plates. During a shot helium and hydrogen ions will impinge on the plates through a ∼3 cm wide entrance slot. The helium removal capability, due to trapping in the nickel, will be assessed for a variety of plasma conditions. In support of the tokamak experiment, the trapping of helium over a range of ion fluences and surface temperatures, and detrapping during subsequent exposure to hydrogen, were measured in ion beam experiments using evaporated nickel surfaces similar to that expected in TEXTOR. Also, the retention of H and He after exposure of a nickel surface to mixed He/H plasmas has bee measured. The results appear favorable, showing high helium trapping (∼10--50% He/Ni) and little or no detrapping by hydrogen. The TEXTOR experiment is planned to begin in 1991. 12 refs., 2 figs., 2 tabs

  3. The TEXTOR helium self-pumping experiment: Design, plans, and supporting ion-beam data on helium retention in nickel

    International Nuclear Information System (INIS)

    Brooks, J.N.; Krauss, A.; Mattas, R.F.; Smith, D.L.; Nygren, R.E.; Doyle, B.L.; McGrath, R.T.; Walsh, D.; Dippel, K.H.; Finken, K.H.

    1990-01-01

    A proof-of-principle experiment to demonstrate helium self-pumping in a tokamak is being undertaken in TEXTOR. The experiment will use a helium self-pumping module installed in a modified ALT-I limiter head. The module consists of two, ≅ 25x25 cm 2 heated nickel alloy trapping plates, a nickel deposition filament array, and associated diagnostics. Between plasma shots a coating of ≅ 50A nickel will be deposited on the two trapping plates. During a shot helium and hydrogen ions will impinge on the plates through a ≅ 3 cm wide entrance slot. The helium removal capability, due to trapping in the nickel, will be assessed for a variety of plasma conditions. In support of the tokamak experiment, the trapping of helium over a range of ion fluences and surface temperatures, and detrapping during subsequent exposure to hydrogen, were measured in ion beam experiments using evaporated nickel surfaces similar to that expected in TEXTOR. Also, the retention of H and He after exposure of a nickel surface to mixed He/H plasmas has been measured. The results appear favorable, showing high helium trapping (≅ 10-50% He/Ni) and little or no detrapping by hydrogen. The TEXTOR experiment is planned to begin in 1991. (orig.)

  4. Ion beam analysis of metal ion implanted surfaces

    International Nuclear Information System (INIS)

    Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T.; Sood, D.K.

    1993-01-01

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs

  5. Ion beam analysis of metal ion implanted surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Evans, P J; Chu, J W; Johnson, E P; Noorman, J T [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D K [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

  6. Ion beam analysis of metal ion implanted surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

  7. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  8. Ion implantation in semiconductors and other materials

    International Nuclear Information System (INIS)

    Guernet, G.; Bruel, M.; Gailliard, J.P.; Garcia, M.; Robic, J.Y.

    1977-01-01

    The evolution of ion implantation techniques in the field of semiconductors and its extension to various fields such as metallurgy, mechanics, superconductivity and opto-electronics are considered. As for semiconductors ion implantation is evoked as: a means of predeposition of impurities at low doping level (10 11 to 10 14 cm -2 ); a means for obtaining profiles of controlled concentration; a means of reaching high doping levels with using 'strong current' implantation machines of the second generation. Some results obtained are presented [fr

  9. Helium ion damage in an amorphous Fe-Ni-Mo-B alloy

    International Nuclear Information System (INIS)

    Swijgenhoven, H. van; Stals, L.M.; Knuyt, G.

    1983-01-01

    Data are presented on helium gas bubble and helium blister formation for Metglas 2826MB during 5 keV He + -implantation in the temperature range 200K-600K and dose range 5.10 20 -10 22 He + /m 2 . It is concluded that amorphous alloys are less radiation resistant as has been thought earlier. (author)

  10. A hot implantation study on the evolution of defects in He ion implanted MgO(1 0 0)

    International Nuclear Information System (INIS)

    Fedorov, A.V.; Huis, M.A. van; Veen, A. van

    2002-01-01

    Ion implantation at elevated temperature, so-called hot implantation, was used to study nucleation and thermal stability of the defects. In this work, MgO(1 0 0) single crystal samples were implanted with 30 keV He ions at various implantation temperatures. The implantation doses ranged from 10 14 to 10 16 cm -2 . The implantation introduced defects were subsequently studied by thermal helium desorption spectroscopy (THDS) and Doppler broadening positron beam analysis (PBA). The THDS study provides vital information on the kinetics of He release from the sample. PBA technique, being sensitive to the open volume defects, provides complementary information on cavity evolution. The THD study has shown that in most cases helium release is characterised by the activation energy of Q=4.7±0.5 eV with the maximum release temperature of T max =1830 K. By applying first order desorption model the pre-exponent factor is estimated as ν=4.3x10 11 s -1

  11. ERDA with an external helium ion micro-beam: Advantages and potential applications

    International Nuclear Information System (INIS)

    Calligaro, T.; Castaing, J.; Dran, J.-C.; Moignard, B.; Pivin, J.-C.; Prasad, G.V.R.; Salomon, J.; Walter, P.

    2001-01-01

    Preliminary ERDA experiments at atmospheric pressure have been performed with our external microprobe set-up currently used for the analysis of museum objects by PIXE, RBS and NRA. The objective was to check the feasibility of hydrogen (and deuterium) profiling with an external beam of 3-MeV helium ions. The standard scattering geometry (incident beam at 15 deg. with respect to sample surface and emerging protons or deuterons at 15 deg. in the forward direction) was kept, but the thin foil absorber was replaced by helium gas filling the space between the beam spot and the detector over a distance of about 84 mm. Several standards prepared by ion implantation, with well known H or D depth profiles, were first analysed, which indicated that the analytical capability was as good as under vacuum. A striking feature is the much lower surface peak than under vacuum, a fact that enhances the sensitivity for H analysis near the surface. The same type of measurement was then performed on different materials to show the usefulness of the technique. As a first example, we have checked that the incorporation of H or D into sapphire crystals during mechanical polishing is below the detection limit. Another example is the measurement of the H content in emeralds which can be used as an additional compositional criterion for determining the provenance of emeralds set in museum jewels. The advantages and limitations of our set-up are discussed and several possible applications in the field of cultural heritage are described

  12. Aligned ion implantation using scanning probes

    International Nuclear Information System (INIS)

    Persaud, A.

    2006-01-01

    A new technique for precision ion implantation has been developed. A scanning probe has been equipped with a small aperture and incorporated into an ion beamline, so that ions can be implanted through the aperture into a sample. By using a scanning probe the target can be imaged in a non-destructive way prior to implantation and the probe together with the aperture can be placed at the desired location with nanometer precision. In this work first results of a scanning probe integrated into an ion beamline are presented. A placement resolution of about 120 nm is reported. The final placement accuracy is determined by the size of the aperture hole and by the straggle of the implanted ion inside the target material. The limits of this technology are expected to be set by the latter, which is of the order of 10 nm for low energy ions. This research has been carried out in the context of a larger program concerned with the development of quantum computer test structures. For that the placement accuracy needs to be increased and a detector for single ion detection has to be integrated into the setup. Both issues are discussed in this thesis. To achieve single ion detection highly charged ions are used for the implantation, as in addition to their kinetic energy they also deposit their potential energy in the target material, therefore making detection easier. A special ion source for producing these highly charged ions was used and their creation and interactions with solids of are discussed in detail. (orig.)

  13. Synthesis of titanium sapphire by ion implantation

    International Nuclear Information System (INIS)

    Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

    1998-01-01

    Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

  14. Channeling ion implantation through palladium films

    International Nuclear Information System (INIS)

    Ishiwara, H.; Furukawa, S.

    1975-01-01

    The possibility of channeling ion implantation into semiconductors through polycrystalline metallic layers is studied. Minimum values and standard deviations of channeling angular yield in polycrystalline Pd 2 Si layers formed on Si have been measured by protons and 4 He, and 14 N ion backscattering and channeling measurements. Depth distributions of the spread of crystallite orientations and scattering centers such as lattice defects have been separately derived by using the above two quantities. It has been concluded that the channeling-ion-implantation technique will become a practical one by using the parallel scanning system

  15. Characterization of nitrogen-ion-implanted aluminium

    International Nuclear Information System (INIS)

    Rauschenbach, B.; Breuer, K.; Leonhardt, G.

    1990-01-01

    Aluminium has been implanted with nitrogen ions at different temperatures. The implanted samples have been characterized by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS). Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES and XPS from the nitrogen-ion-beam-induced effects. The chemical state of Al, N, O and C was identified by deconvolution of the measured spectra. In general, there were double-peak structures observed for N 1s and O 1s, identified as contributions from nitrides and weakly bound nitrogen, and oxides and weakly bound oxygen, respectively. Auger analysis confirms the influence of the nitrogen ion fluence on the shape of the concentration distribution. The influence of temperature on the chemical state of implanted aluminium and on the concentration distribution is discussed. (orig.)

  16. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S P; Jamieson, D N; Nugent, K W; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  17. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  18. Application of ion implantation in stevia breeding

    International Nuclear Information System (INIS)

    Wang Cailian; Chen Qiufang; Jin Wei; Lu Ting; Shu Shizhen

    1999-08-01

    Dry seed of stevia were implanted with 60-100 keV nitrogen ion and 75 keV carbon ion of various doses, and the effects of the composition and yield of stevioside were studied. The results showed that ion beam could induce variation in total stevioside yield and the composition of the plant. The best treatment was 75 keV nitrogen ion with 5 x 10 14 N + /cm 2 , the stevioside yield and Rebaudioside A (R-A) content were increased by 4.74% and 14.08% respectively. The effects induced by implantation of carbon ion were higher than those induced by implantation of nitrogen ion. Effects of Feng 1 x Ri Yuan and Ri Yuan x Feng 2 are higher than those of Ji Ning and Feng 2 . Seven mutation lines were selected from the mutation progenies. The stevioside composition of these lines were previously improved. The results suggest a potential application of ion implantation in stevia breeding

  19. High current pelletron for ion implantation

    International Nuclear Information System (INIS)

    Schroeder, J.B.

    1989-01-01

    Since 1984, when the first production MeV ion implanter (an NEC model MV-T30) went on-line, interest in versatile electrostatic accelerator systems for MeV ion implantation has grown. The systems use a negative ion source to inject a tandem megavolt accelerator. In early systems the 0.4 mA of charging current from the two Pelletron charging chains in the accelerator was sufficient for the low intensity of beams from the ion source. This 2-chain system, however, is no longer adequate for the much higher beam intensities from today's improved ion sources. A 4-chain charging system, which delivers 1.3 mA to the high voltage terminal, was developed and is in operation in new models of NEC S Series Pelletron accelerators. This paper describes the latest beam performance of 1 MV and 1.7 MW Pelletron accelerators with this new 4-chain charging system. (orig.)

  20. More-reliable SOS ion implantations

    Science.gov (United States)

    Woo, D. S.

    1980-01-01

    Conducting layer prevents static charges from accumulating during implantation of silicon-on-sapphire MOS structures. Either thick conducting film or thinner film transparent to ions is deposited prior to implantation, and gaps are etched in regions to be doped. Grounding path eliminates charge flow that damages film or cracks sapphire wafer. Prevention of charge buildup by simultaneously exposing structure to opposite charges requires equipment modifications less practical and more expensive than deposition of conducting layer.

  1. Graphitic structure formation in ion implanted polyetheretherketone

    Energy Technology Data Exchange (ETDEWEB)

    Tavenner, E., E-mail: tazman1492@gmail.com [Creative Polymers Pty. Ltd., 41 Wilkinson Street, Toowoomba, Queensland 4350 (Australia); Chemical Committee, Surface Chemical Analysis, Standards (Australia); Wood, B. [Centre for Microscopy and Microanalysis, University of Queensland, St. Lucia, Queensland 4072 (Australia); Chemical Committee, Surface Chemical Analysis, Standards (Australia); Curry, M.; Jankovic, A.; Patel, R. [Center for Applied Science and Engineering, Missouri State University, 524 North Boonville Avenue, Springfield, MO 65806 (United States)

    2013-10-15

    Ion implantation is a technique that is used to change the electrical, optical, hardness and biocompatibility of a wide range of inorganic materials. This technique also imparts similar changes to organic or polymer based materials. With polymers, ion implantation can produce a carbon enriched volume. Knowledge as to the nature of this enrichment and its relative concentration is necessary to produce accurate models of the physical properties of the modified material. One technique that can achieve this is X-ray photoelectron spectroscopy. In this study the formation of graphite like structures in the near surface of polyetheretherketone by ion implantation has been elucidated from detailed analysis of the C 1s and valence band peak structures generated by X-ray photoelectron spectroscopy. Further evidence is given by both Rutherford backscatter spectroscopy and elastic recoil detection.

  2. Studies of ion implanted thermally oxidised chromium

    International Nuclear Information System (INIS)

    Muhl, S.

    1977-01-01

    The thermal oxidation of 99.99% pure chromium containing precise amounts of foreign elements has been studied and compared to the oxidation of pure chromium. Thirty-three foreign elements including all of the naturally occurring rare earth metals were ion implanted into chromium samples prior to oxidation at 750 0 C in oxygen. The role of radiation induced damage, inherent in this doping technique, has been studied by chromium implantations at various energies and doses. The repair of the damage has been studied by vacuum annealing at temperatures up to 800 0 C prior to oxidation. Many of the implants caused an inhibition of oxidation, the greatest being a 93% reduction for 2 x 10 16 ions/cm 2 of praseodymium. The distribution of the implant was investigated by the use of 2 MeV alpha backscattering and ion microprobe analysis. Differences in the topography and structure of the chromic oxide on and off the implanted area were studied using scanning electron and optical microscopy. X-ray diffraction analysis was used to investigate if a rare earth-chromium compound of a perovskite-type structure had been formed. Lastly, the electrical conductivity of chromic oxide on and off the implanted region was examined at low voltages. (author)

  3. Tribological properties of ion-implanted steels

    International Nuclear Information System (INIS)

    Iwaki, Masaya

    1987-01-01

    The tribological properties such as surface hardness, friction and wear have been studied for low carbon steels and tool steels implanted with many types of ion including metallic elements. The hardness measured by Vickers or Knoop hardness testers as a function of normal load is dependent on the implanted species, fluence and substrate. The friction coefficients measured by Bowden-Leben type of friction tests or detected during wear tests also depend on the implantation conditions. The improvement in the wear resistance, which is most important for industrial use of implanted materials, has been investigated for AISI H13 prehardened and tool steels implanted with nitrogen and boron ions. The relationship between hardness, friction and wear is discussed in comparison with the microcharacteristics such as composition and chemical bonding states measured by means of secondary ion mass spectrometry and X-ray photoelectron spectroscopy. It is concluded that the increase in hardness and/or the decrease in friction coefficient play(s) an important role in improving the wear resistance, and the relationship between relative wear volume and relative hardness is correlated for boron and nitrogen implantation. (orig.)

  4. Changes in surface properties caused by ion implantation

    International Nuclear Information System (INIS)

    Iwaki, Masaya

    1987-01-01

    This report outlines various aspects of ion implantation. Major features of ion implantation are described first, focusing on the structure of ion implantation equipment and some experimental results of ion implantation into semiconductors. Distribution of components in ion-implantated layers is then discussed. The two major features of ion implantation in relation to the distribution of implanted ions are: (1) high controllability of addition of ions to a surface layer and (2) formation of a large number of lattice defects in a short period of time. Application of ion implantation to metallic materials is expected to permit the following: (1) formation of a semi-stable alloy surface layer by metallic ion implantation, (2) formation of a semi-stable ceramic surface layer or buried layer by non-metallic ion implantation, and (3) formation of a buried layer by combined implementation of a different metallic ion and non-metallic ion. Ion implantation in carbon materials, polymers and ceramics is discussed next. The last part of the report is dedicated to macroscopic properties of an ion-implanted layer, centering on surface modification, formation of a conductive surface layer, and tribology. (Nogami, K.) 60 refs

  5. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  6. Unexpected mobility of OH+ and OD+ molecular ions in cooled helium gas

    International Nuclear Information System (INIS)

    Isawa, R; Yamazoe, J; Tanuma, H; Ohtsuki, K

    2012-01-01

    Mobilities of OH + and OD + ions in cooled helium gas have been measured at gas temperature of 4.3 K. Measured mobilities of both ions as a function of an effective temperature T eff show a minimum around 80 K, and they are approaching to the polarization limits at very low T eff . These findings will be related to the extremely strong anisotropy of the interaction potential between the molecular ion and helium atom.

  7. Hip implants - Paper VI - Ion concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Sargeant, A. [Department of Biological Sciences, Ohio Northern University, Ada, OH 45810 (United States); Goswami, T. [Department of Mechanical Engineering, Ohio Northern University, Ada, OH 45810 (United States)]. E-mail: t-goswami@onu.edu

    2007-07-01

    Total hip-joint arthroplasty is performed in increasing numbers where it translates to about 0.16-0.2% of population per year in industrial countries. In most cases, an implant is a metallic component articulating with a metal, ceramic or poly-ethylene liner as seen in the case of hip, knee and spine. The metal implants release ions in vivo. Therefore, there is a need to study metallic implants and ions released as a result. Toxic concentrations of ions can lead to many adverse physiological effects, including cytotoxicity, genotoxicity, carcinogenicity, and metal sensitivity. There is a need to map ion concentrations establishing boundaries between normal and toxic levels; which however, does not exist. Reference levels of ion concentrations in body fluids and tissues determined by many studies are compiled, reviewed, and presented in this paper. The concentrations of ions released from different alloys, including cobalt, chromium, nickel, molybdenum titanium, aluminum, and vanadium, are presented in this paper. This paper reviews the literature pertaining to clinical data on metal ion concentrations in patients with metal joint prostheses, and laboratory data on the physiological effects of the metals.

  8. Analysis of helium-ion scattering with a desktop computer

    Science.gov (United States)

    Butler, J. W.

    1986-04-01

    This paper describes a program written in an enhanced BASIC language for a desktop computer, for simulating the energy spectra of high-energy helium ions scattered into two concurrent detectors (backward and glancing). The program is designed for 512-channel spectra from samples containing up to 8 elements and 55 user-defined layers. The program is intended to meet the needs of analyses in materials sciences, such as metallurgy, where more than a few elements may be present, where several elements may be near each other in the periodic table, and where relatively deep structure may be important. These conditions preclude the use of completely automatic procedures for obtaining the sample composition directly from the scattered ion spectrum. Therefore, efficient methods are needed for entering and editing large amounts of composition data, with many iterations and with much feedback of information from the computer to the user. The internal video screen is used exclusively for verbal and numeric communications between user and computer. The composition matrix is edited on screen with a two-dimension forms-fill-in text editor and with many automatic procedures, such as doubling the number of layers with appropriate interpolations and extrapolations. The control center of the program is a bank of 10 keys that initiate on-event branching of program flow. The experimental and calculated spectra, including those of individual elements if desired, are displayed on an external color monitor, with an optional inset plot of the depth concentration profiles of the elements in the sample.

  9. Forming controlled inset regions by ion implantation and laser bombardment

    International Nuclear Information System (INIS)

    Gibbons, J.F.

    1981-01-01

    A semiconductor integrated circuit structure in which the inset regions are ion implanted and laser annealed to maintain substantially the dimensions of the implantation and the method of forming inset implanted regions having controlled dimensions

  10. Evaluation of an expence of materials during ion implantation

    International Nuclear Information System (INIS)

    Bannikov, M.G.; Zlobin, N.; Zotov, A.V.; Vasilev, V.I.; Vasilev, I.P.

    2003-01-01

    Ion implantation is used for a surface modification. The implantation dose must be sufficient to obtain the required properties of a processed surface, but should not be exceeded to prevent over-expenditure of implanted materials. The latter is especially important when noble metals are used as an implanted material. The ion implanter includes a vacuum chamber, source of metal ions (target) and a vacuum pumping-out system. Ions of a plasma-forming gas sputter the target and ions of metal are then accelerated and implanted into surface treated. Ion implantation dose can be calculated from operation parameters such as ion beam current density and duration of implanting. The presence of the plasma-forming gas in the ion flow makes it difficult to determine the expenditure of an implanted metal itself. The objective of this paper is the more accurate definition of an expense of an implanted metal. Mass- spectrometric analysis of an ion beam together with the weighing of the target was used to determine the expense of an implanted metal. It was found that, depending on the implantation parameters, on average around 50% of a total ion flow are metal ions. Results obtained allow more precise definition of an implantation dose. Thus, over- expenditure of implanted metals can be eliminated. (author)

  11. Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

    Directory of Open Access Journals (Sweden)

    Patrick Philipp

    2016-11-01

    Full Text Available The analysis of polymers by secondary ion mass spectrometry (SIMS has been a topic of interest for many years. In recent years, the primary ion species evolved from heavy monatomic ions to cluster and massive cluster primary ions in order to preserve a maximum of organic information. The progress in less-damaging sputtering goes along with a loss in lateral resolution for 2D and 3D imaging. By contrast the development of a mass spectrometer as an add-on tool for the helium ion microscope (HIM, which uses finely focussed He+ or Ne+ beams, allows for the analysis of secondary ions and small secondary cluster ions with unprecedented lateral resolution. Irradiation induced damage and depth profiling capabilities obtained with these light rare gas species have been far less investigated than ion species used classically in SIMS. In this paper we simulated the sputtering of multi-layered polymer samples using the BCA (binary collision approximation code SD_TRIM_SP to study preferential sputtering and atomic mixing in such samples up to a fluence of 1018 ions/cm2. Results show that helium primary ions are completely inappropriate for depth profiling applications with this kind of sample materials while results for neon are similar to argon. The latter is commonly used as primary ion species in SIMS. For the two heavier species, layers separated by 10 nm can be distinguished for impact energies of a few keV. These results are encouraging for 3D imaging applications where lateral and depth information are of importance.

  12. Study of diffusion mechanisms of helium atoms in face-centered cubic metals after α - implantation in a cyclotron

    International Nuclear Information System (INIS)

    Sciani, V.; Lucki, G.; Jung, P.

    1984-01-01

    Helium has been homogeneously introduced into gold foils at room temperature by alpha implantation in a CV-28 cyclotron. After implantation the helium release was observed in isothermal and linear heating experiments. The diffusion coefficient follows an Arrhenius behaviour with D sub(o) = 0.1 cm 2 /s and ΔH = 1.7 eV. Possible diffusion mechanisms are discussed. (Author) [pt

  13. Mechanical properties of ion-implanted alumina

    International Nuclear Information System (INIS)

    Pope, S.G.

    1988-01-01

    Monolithic oxide ceramics are being proposed as structural materials in continuously more-demanding applications. The demands being placed on these materials have caused concern pertaining to the continued growth of oxide structural ceramics due to limited toughness. The realization that ceramic strength and toughness can be affected by surface conditions has led to many surface-modification techniques, all striving to improve the mechanical properties of ceramics. Along these lines, the effects of ion implantation as a surface modification technique for improvement of the mechanical properties of alumina were studied. Initially, sapphire samples were implanted with elemental ion species that would produce oxide precipitates within the sapphire surface when annealed in an oxygen-containing atmosphere. Optimum conditions as determined from implantation into sapphire were then used to modify a polycrystalline alumina. Specific modifications in microhardness, indentation fracture toughness and flexure strength are reported for the parameters studied. Microstructure and phase relationships related to modified surfaces properties are also reported

  14. Improvement of tribological properties by ion implantation

    International Nuclear Information System (INIS)

    Gerve, A.

    1993-01-01

    Many different measurements confirm that ion implantation changes the friction and wear behaviour, which are the most important properties of tribological systems. Unfortunately, these properties will not always be improved. In industrial application, very often different results of the effects of ion implantation into tools or machine components can be observed, even if the same materials are used. A very important reason for this is the different stresses on the tribological systems. The energy input caused by friction, which is a function of the stress and other parameters of the tribosystem, within a short time leads to the appearance of energy islands, which are statistically distributed over the surfaces. The density of energy within these tiny energy islands is very high. Results of these high energy densities is a mutation of the material's composition and structure within a very thin layer of less than 100 nm underneath the surface and wear. Ion implantation also changes the composition and structure of the bulk material close to the surface. Thus there is urgent need to understand tribo-induced mutations of ion-implanted materials and their influence on the tribological properties. For that reason surface analyses have to be carried out to determine the composition and structure of the materials and the mutation caused by friction and wear

  15. Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

    International Nuclear Information System (INIS)

    Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

    1982-11-01

    Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

  16. Microstructure and thermomechanical pretreatment effects on creep behaviour of helium-implanted DIN 1.4970 austenitic stainless steel

    International Nuclear Information System (INIS)

    Matta, M.K.; Kesternich, W.

    1990-01-01

    Microstructure investigations were carried out on unimplanted and 150 at ppm helium implanted foil specimens of DIN 1.4970 austenitic stainless steel after various thermomechanical pretreatments. Creep test were also carried out for both helium-implanted and unimplanted specimens at 700degC and 800degC. The strength, ductility and rupture time are correalted with the dislocation and precipitate distributions. Helium embrittlement can be reduced in these experiments when dispersive TiC precipitate distributions are produced by proper pretreatments or allowed to form during creep test. (author). 14 refs., 11 figs

  17. 15 years experience with helium ion radiotherapy for uveal melanoma

    International Nuclear Information System (INIS)

    Castro, J.R.; Char, D.H.; Petti, P.L.; Daftari, I.K.; Quivey, J.M.; Singh, R.P.; Phillips, T.L.

    1996-01-01

    Purpose/Objective: In this study we review our long term experience with helium ion therapy in treating uveal melanoma. Materials and Methods: At UCSF-LBL, 347 patients with uveal melanoma were treated with helium ions from December 1978 - May 1992. A non randomized dose searching study was undertaken beginning with 80 GyE in 5 fractions and subsequently lowered through several levels to 48 GyE in 4 fractions. The treatment period ranged from 3 to 15 days, with a mean of 7 days. The various dose groups were similar in tumor characteristics and size. Results: An overall local control rate of 96% has been achieved, with no dose response being seen at 80, 70, 60 or 50 GyE in 5 fxs. At the lowest dose level of 48 GyE in 4 fxs, the local control rate fell to 87%. Fifteen patients (4%) had local failure in the eye requiring enucleation (12 pts), laser (1 pt) or reirradiation (2 pts). The time of appearance of local failures ranges from 4 to 64 months with most occurring within 2 years. Eight of the 15 patients with local failure are dead of distant metastases. Of the 347 patients, 308 had (20(200)) vision or better in the affected eye prior to treatment. Of these, 125 (41%) have retained at least(20(200)) vision in the treated eye. Patients with tumors greater than 5 mm in ultrasound height or close to the optic nerve or fovea have a reduced chance of retaining useful vision. The total enucleation rate is 15%, 1% for local failure and 14% because of complications of the helium RT, mostly secondary to severe glaucoma. Of the 347 patients, 230 are still alive. The median follow up is 75 months, range 3-206 months. Kaplan-Maier (K-M) survival for all 347 patients was 80% at 5 years, 77% at 10 years and 68% at 15 years post treatment. Results for patients whose tumor involves the ciliary body is much worse with a 15 year K-M survival of 42%, whereas patients not having ciliary involvement have a 15 year K-M survival of 75%. The K-M survival in patients with local failure in

  18. Arbitrary amplitude electrostatic wave propagation in a magnetized dense plasma containing helium ions and degenerate electrons

    Science.gov (United States)

    Mahmood, S.; Sadiq, Safeer; Haque, Q.; Ali, Munazza Z.

    2016-06-01

    The obliquely propagating arbitrary amplitude electrostatic wave is studied in a dense magnetized plasma having singly and doubly charged helium ions with nonrelativistic and ultrarelativistic degenerate electrons pressures. The Fermi temperature for ultrarelativistic degenerate electrons described by N. M. Vernet [(Cambridge University Press, Cambridge, 2007), p. 57] is used to define ion acoustic speed in ultra-dense plasmas. The pseudo-potential approach is used to solve the fully nonlinear set of dynamic equations for obliquely propagating electrostatic waves in a dense magnetized plasma containing helium ions. The upper and lower Mach number ranges for the existence of electrostatic solitons are found which depends on the obliqueness of the wave propagation with respect to applied magnetic field and charge number of the helium ions. It is found that only compressive (hump) soliton structures are formed in all the cases and only subsonic solitons are formed for a singly charged helium ions plasma case with nonrelativistic degenerate electrons. Both subsonic and supersonic soliton hump structures are formed for doubly charged helium ions with nonrelativistic degenerate electrons and ultrarelativistic degenerate electrons plasma case containing singly as well as doubly charged helium ions. The effect of propagation direction on the soliton amplitude and width of the electrostatic waves is also presented. The numerical plots are also shown for illustration using dense plasma parameters of a compact star (white dwarf) from literature.

  19. Ion temperature anisotropy in high power helium neutral beam fuelling experiments in JET

    Energy Technology Data Exchange (ETDEWEB)

    Maas, A C; Core, W G.F.; Gerstel, U C; Von Hellermann, M G; Koenig, R W.T.; Marcus, F B [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

    1994-07-01

    During helium beam fuelling experiments in JET, distinctive anisotropic features have been observed in the velocity distribution function describing both fast and thermal alpha particle populations. During the initial fuelling phase the central helium ion temperature observed perpendicular to the magnetic field is higher than the central electron temperature, while the central helium ion temperature observed parallel to the magnetic field is lower than or equal to the central electron temperature. In order to verify temperature measurements of both perpendicular and parallel lines of sight, other independent methods of deducing the ion temperature are investigated: deuterium ion temperature, deuterium density, comparison with neutron rates and profiles (influence of a possible metastable population of helium). 6 refs., 7 figs.

  20. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

    Science.gov (United States)

    Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

    2018-06-01

    Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

  1. Plasma immersion ion implantation of Pebax polymer

    Energy Technology Data Exchange (ETDEWEB)

    Kondyurin, A. [Applied and Plasma Physics, School of Physics (A28), University of Sydney, Sydney, NSW 2006 (Australia)]. E-mail: kond@mailcity.com; Volodin, P. [Leibniz Institute of Polymer Research Dresden e.v., Hohe Str.6, Dresden 01069 (Germany); Weber, J. [Boston Scientific Corporation, One Scimed Place, Maple Grove, MN 55311-1566 (United States)

    2006-10-15

    Nitrogen plasma immersion ion implantation (PIII) was applied to Pebax thin films and plates using doses ranging from 5 x 10{sup 14} to 10{sup 17} ions/cm{sup 2} at applied voltages of 5, 10, 20 and 30 kV. The analysis of the Pebax structure after implantation was performed using FTIR ATR, Raman, UV-vis transmission spectra, tensile and AFM contact mode data. The carbonization and depolymerisation processes were observed in the surface layer of Pebax. It was found, that graphitic- and diamond-like structures in Pebax are formed at PIII treatment of 30 kV applied voltage. AFM measurement data showed that the hardness of the Pebax surface layer increased sharply at PIII treatment with a dose higher then 10{sup 16} ions/cm{sup 2}. The bulk mechanical properties of the Pebax film after PIII remained unchanged.

  2. Hydration of magnesia cubes: a helium ion microscopy study

    Directory of Open Access Journals (Sweden)

    Ruth Schwaiger

    2016-02-01

    Full Text Available Physisorbed water originating from exposure to the ambient can have a strong impact on the structure and chemistry of oxide nanomaterials. The effect can be particularly pronounced when these oxides are in physical contact with a solid substrate such as the ones used for immobilization to perform electron or ion microscopy imaging. We used helium ion microscopy (HIM and investigated morphological changes of vapor-phase-grown MgO cubes after vacuum annealing and pressing into foils of soft and high purity indium. The indium foils were either used as obtained or, for reference, subjected to vacuum drying. After four days of storage in the vacuum chamber of the microscope and at a base pressure of p −7 mbar, we observed on these cubic particles the attack of residual physisorbed water molecules from the indium substrate. As a result, thin magnesium hydroxide layers spontaneously grew, giving rise to characteristic volume expansion effects, which depended on the size of the particles. Rounding of the originally sharp cube edges leads to a significant loss of the morphological definition specific to the MgO cubes. Comparison of different regions within one sample before and after exposure to liquid water reveals different transformation processes, such as the formation of Mg(OH2 shells that act as diffusion barriers for MgO dissolution or the evolution of brucite nanosheets organized in characteristic flower-like microstructures. The findings underline the significant metastability of nanomaterials under both ambient and high-vacuum conditions and show the dramatic effect of ubiquitous water films during storage and characterization of oxide nanomaterials.

  3. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  4. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P S; Prawer, S; Nugent, K W; Bettiol, A A; Kostidis, L I; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  5. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

    1996-01-01

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 μm 2 . After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs

  6. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    Gimbert, J.

    1999-01-01

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  7. Helium Ion Microscopy of proton exchange membrane fuel cell electrode structures

    DEFF Research Database (Denmark)

    Chiriaev, Serguei; Dam Madsen, Nis; Rubahn, Horst-Günter

    2017-01-01

    electrode interface structure dependence on ionomer content, systematically studied by Helium Ion Microscopy (HIM). A special focus was on acquiring high resolution images of the electrode structure and avoiding interface damage from irradiation and tedious sample preparation. HIM demonstrated its....... In the hot-pressed electrodes, we found more closed contact between the electrode components, reduced particle size, polymer coalescence and formation of nano-sized polymer fiber architecture between the particles. Keywords: proton exchange membrane fuel cells (PEMFCs); Helium Ion Microscopy (HIM...

  8. Ion implantation data acquisition system

    International Nuclear Information System (INIS)

    Struttmann, D.A.; Anderl, R.A.

    1989-01-01

    This paper describes a data acquisition system developed for hydrogen ion-driven permeation experiments for materials relevant to fusion technology. The system consists of an IMB PC-AT, CAMAC interface to diagnostic instrumentation and custom-developed software (BASIC) to provide time-history information for signals from several instruments including three quadrupole mass spectrometers. 4 refs., 5 figs

  9. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Prins, Johan F.

    2001-01-01

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He + -ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  10. Gas bubble and damage microstructure in helium implanted nickel

    International Nuclear Information System (INIS)

    Kaminsky, M.; Das, S.K.; Fenske, G.

    1978-01-01

    Transmission electron microscopy has been used to study the depth distribution of bubbles (or voids) and dislocation damage in nickel irradiated at 500 0 C with 20- and 500-keV 4 He + ions to total doses ranging from 2.9 x 10 15 to 5 x 10 17 ions/cm 2 . The size, number density, and volume fraction of bubbles (or voids) were measured from micrographs taken from samples sectioned parallel to the surface normal. The results for 500-keV irradiation show that the peaks in the depth distribution of number density and of volume fraction (i.e., swelling) of bubbles (or voids) are approx. 20% deeper than the calculated projected range distribution. However, for 20-keV irradiation the peak in the swellig occurs at a depth which is about a factor of two larger than the peak in the distributions of projected range and the energy deposited into damage as calculated according to Brice. The peak positions are nearly independent of the total doses used in these studies. The implications of these results for the blistering mechanisms are discussed

  11. Subnanosecond timing with ion-implanted detectors

    International Nuclear Information System (INIS)

    Rijken, H.A.; Klein, S.S.; Jacobs, W.; Teeuwen, L.J.H.G.W.; Voigt, M.J.A. de; Burger, P.

    1992-01-01

    The energy resolution of ion-implanted charged particle detectors may be improved by decreasing the thickness of the implanted detector window to minimize energy straggling. Because of the resistance of this layer, however, the timing depends on the position of entry. Two solutions to this conflict between energy resolution and time resolution are studied: evaporating a very thin aluminum layer on the detector window and fabricating a rectangular detector. Both solutions are shown to be successful with a total time resolution in the low subnanosecond region (<200 ps). (orig.)

  12. Comparison of platelet formation in hydrogen and helium-implanted silicon

    International Nuclear Information System (INIS)

    Hebras, X.; Nguyen, P.; Bourdelle, K.K.; Letertre, F.; Cherkashin, N.; Claverie, A.

    2007-01-01

    A comparative transmission electron microscopy study of the extended defects formed in (0 0 1) Si after hydrogen or helium implantation was performed. Quantitative data on the size and density of the defects with different crystallographic variants have been obtained. Common defects observed after implants with a dose of 1 x 10 16 cm -2 and isothermal anneals at 350 o C in the presence of a stiffener were platelet-like structures lying on {1 0 0} habit planes parallel and perpendicular to the wafer surface. The differences in the defect morphology and in the variant platelet population are correspondingly related to the different chemical reactivity of H and He and the different compressive biaxial stresses generated by the H and He implants

  13. Ion beam sputter implantation method

    International Nuclear Information System (INIS)

    King, W.J.

    1978-01-01

    By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

  14. Plasma immersion ion implantation for reducing metal ion release

    Energy Technology Data Exchange (ETDEWEB)

    Diaz, C.; Garcia, J. A.; Maendl, S.; Pereiro, R.; Fernandez, B.; Rodriguez, R. J. [Centro de Ingenieria Avanzada de Superficies AIN, 31191, Cordovilla-Pamplona (Spain); Leibniz-Institut fuer Oberflaechenmodifizierung, 04318 Leipzig (Germany); Universidad de Oviedo, Departamento Quimica Fisica y Analitica (Spain); Centro de Ingenieria Avanzada de Superficies AIN, 31191, Cordovilla-Pamplona (Spain)

    2012-11-06

    Plasma immersion ion implantation of Nitrogen and Oxygen on CoCrMo alloys was carried out to improve the tribological and corrosion behaviors of these biomedical alloys. In order to optimize the implantation results we were carried experiments at different temperatures. Tribocorrosion tests in bovine serum were used to measure Co, Cr and Mo releasing by using Inductively Coupled Plasma Mass Spectrometry analysis after tests. Also, X-ray Diffraction analysis were employed in order to explain any obtained difference in wear rate and corrosion tests. Wear tests reveals important decreases in rate of more than one order of magnitude for the best treatment. Moreover decreases in metal release were found for all the implanted samples, preserving the same corrosion resistance of the unimplanted samples. Finally this paper gathers an analysis, in terms of implantation parameters and achieved properties for industrial implementation of these treatments.

  15. Mechanical properties of ion implanted ceramic surfaces

    International Nuclear Information System (INIS)

    Burnett, P.J.

    1985-01-01

    This thesis investigates the mechanisms by which ion implantation can affect those surface mechanical properties of ceramics relevant to their tribological behaviour, specifically hardness and indentation fracture. A range of model materials (including single crystal Si, SiC, A1 2 0 3 , Mg0 and soda-lime-silica glass) have been implanted with a variety of ion species and at a range of ion energies. Significant changes have been found in both low-load microhardness and indentation fracture behaviour. The changes in hardness have been correlated with the evolution of an increasingly damaged and eventually amorphous thin surface layer together with the operation of radiation-, solid-solution- and precipitation-hardening mechanisms. Compressive surface stresses have been shown to be responsible for the observed changes in identation fracture behaviour. In addition, the levels of surface stress present have been correlated with the structure of the surface layer and a simple quantitative model proposed to explain the observed stress-relief upon amorphisation. Finally, the effects of ion implantation upon a range of polycrystalline ceramic materials has been investigated and the observed properties modifications compared and contrasted to those found for the model single crystal materials. (author)

  16. Helium implanted Eurofer97 characterized by positron beam Doppler broadening and Thermal Desorption Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, I., E-mail: i.carvalho@m2i.nl [Materials Innovation Institute (M2i), Delft (Netherlands); Schut, H. [Delft University of Technology, Faculty of Applied Sciences, Delft (Netherlands); Fedorov, A.; Luzginova, N. [Nuclear Research and Consultancy Group (NRG), Petten (Netherlands); Desgardin, P. [CEMHTI-CNRS, 3A Rue de la Férolerie, 45071 Orléans Cedex (France); Sietsma, J. [Delft University of Technology, Faculty of Mechanical, Maritime and Materials Engineering, Delft (Netherlands)

    2013-11-15

    Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To produce irradiation induced defects, Eurofer97 samples were implanted with helium at energies of 500 keV and 2 MeV and doses of 1 × 10{sup 15}–10{sup 16} He/cm{sup 2}, creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). Results show that up to ∼600 K peaks that can be attributed to He desorption from overpressured He{sub n}V{sub m} (n > m) clusters and vacancy assisted mechanism in the case of helium in the substitutional position. The temperature range 600–1200 K is related to the formation of larger clusters He{sub n}V{sub m} (n < m). The dissociation of the HeV and the phase transition attributed to a sharp peak in the TDS spectra at 1200 K. Above this temperature, the release of helium from bubbles is observed.

  17. Helium retention in krypton ion pre-irradiated nanochannel W film

    Science.gov (United States)

    Qin, Wenjing; Ren, Feng; Zhang, Jian; Dong, Xiaonan; Feng, Yongjin; Wang, Hui; Tang, Jun; Cai, Guangxu; Wang, Yongqiang; Jiang, Changzhong

    2018-02-01

    Nanochannel tungsten (W) film is a promising candidate as an alternative to bulk W for use in fusion applications. In previous work it has been shown to have good radiation resistance under helium (He) irradiation. To further understand the influence of the irradiation-induced displacement cascade damage on helium retention behaviour in a fusion environment, in this work, nanochannel W film and bulk W were pre-irradiated by 800 keV Kr2+ ions to the fluence of 2.6  ×  1015 ions cm-2 and subsequently irradiated by 40 keV He+ ions to the fluence of 5  ×  1017 ions cm-2. The Kr2+ ion pre-irradiation greatly increases helium retention in the form of small clusters and retards the formation of large clusters. It can effectively inhibit surface helium blistering under high temperature annealing. Compared with bulk W, no cracks were found in the nanochannel W film post-irradiated by He+ ions at high fluence. The release of helium from the nanochannel W film is more than one order of magnitude higher than that of bulk W whether they are irradiated by single He+ ions or sequentially irradiated by Kr2+ and He+ ions. Moreover, swelling of the bulk W is more serious than that of the nanochannel film. Therefore, nanochannel W film has a higher radiation tolerance performance in the synergistic irradiation.

  18. Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

    International Nuclear Information System (INIS)

    Carder, D.A.; Markwitz, A.

    2009-01-01

    This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

  19. Cluster Ion Implantation in Graphite and Diamond

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2014-01-01

    Cluster ion beam technique is a versatile tool which can be used for controllable formation of nanosize objects as well as modification and processing of surfaces and shallow layers on an atomic scale. The current paper present an overview and analysis of data obtained on a few sets of graphite...... and diamond samples implanted by keV-energy size-selected cobalt and argon clusters. One of the emphases is put on pinning of metal clusters on graphite with a possibility of following selective etching of graphene layers. The other topic of concern is related to the development of scaling law for cluster...... implantation. Implantation of cobalt and argon clusters into two different allotropic forms of carbon, namely, graphite and diamond is analysed and compared in order to approach universal theory of cluster stopping in matter....

  20. Dopant profiling based on scanning electron and helium ion microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Chee, Augustus K.W., E-mail: kwac2@cam.ac.uk [Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Boden, Stuart A. [University of Southampton, Electronics and Computer Science, Highfield, Southampton SO17 1BJ (United Kingdom)

    2016-02-15

    In this paper, we evaluate and compare doping contrast generated inside the scanning electron microscope (SEM) and scanning helium ion microscope (SHIM). Specialised energy-filtering techniques are often required to produce strong doping contrast to map donor distributions using the secondary electron (SE) signal in the SEM. However, strong doping contrast can be obtained from n-type regions in the SHIM, even without energy-filtering. This SHIM technique is more sensitive than the SEM to donor density changes above its sensitivity threshold, i.e. of the order of 10{sup 16} or 10{sup 17} donors cm{sup −3} respectively on specimens with or without a p–n junction; its sensitivity limit is well above 2×10{sup 17} acceptors cm{sup −3} on specimens with or without a p–n junction. Good correlation is found between the widths and slopes of experimentally measured doping contrast profiles of thin p-layers and the calculated widths and slopes of the potential energy distributions across these layers, at a depth of 1 to 3 nm and 5 to 10 nm below the surface in the SHIM and the SEM respectively. This is consistent with the mean escape depth of SEs in silicon being about 1.8 nm and 7 nm in the SHIM and SEM respectively, and we conclude that short escape depth, low energy SE signals are most suitable for donor profiling. - Highlights: • Strong doping contrast from n-type regions in the SHIM without energy-filtering. • Sensitivity limits are established of the SHIM and SEM techniques. • We discuss the impact of SHIM imaging conditions on quantitative dopant profiling. • Doping contrast stems from different surface layer thicknesses in the SHIM and SEM.

  1. Chemical and catalytic effects of ion implantation

    International Nuclear Information System (INIS)

    Wolf, G.K.

    1982-01-01

    Energetic particles are used for inducing chemical reactions as well as for modifying the properties of materials with regard to their bulk and surface chemical behavior. The effects are partly caused by radiation damage or phase intermixing, partly by the chemical properties of the individual bombarding particles. In this contribution a survey of relevant applications of these techniques is presented: (1) Chemical reactions of implanted and recoil atoms and their use for syntheses, doping and labeling of compounds. (2) The formation of thin films by decomposing chemical compounds with ion beams. 3) Catalytic effects on substrates treated by sputtering or ion implantation. Recent results with nonmetallic substrates are reviewed. Mainly hydrogenation reactions at a solid/gas interface or redox reactions at an electrified solid/liquid interface are mentioned. The present status and future prospects of these kinds of investigations will be discussed. (author)

  2. Damage accumulation in ceramics during ion implantation

    International Nuclear Information System (INIS)

    McHargue, C.J.; Farlow, G.C.; Begun, G.M.; Williams, J.M.; White, C.W.; Appleton, B.R.; Sklad, P.S.; Angelini, P.

    1985-01-01

    The damage structures of α-Al 2 O 3 and α-SiC were examined as functions of ion implantation parameters using Rutherford backscattering-channeling, analytical electron microscopy, and Raman spectroscopy. Low temperatures or high fluences of cations favor formation of the amorphous state. At 300 0 K, mass of the bombarding species has only a small effect on residual damage, but certain ion species appear to stabilize the damage microstructure and increase the rate of approach to the amorphous state. The type of chemical bonding present in the host lattice is an important factor in determining the residual damage state

  3. Laser annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    White, C.W.; Appleton, B.R.; Wilson, S.R.

    1980-01-01

    Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes at the interface occurring during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both K' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed. 5 figures, 2 tables

  4. Quantum effects in ion implanted devices

    International Nuclear Information System (INIS)

    Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Yang, C.; Dzurak, A.S.; Yang, C.; Clark, R.G.; Yang, C.

    2005-01-01

    Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because it will be necessary to control quantum states at the level of individual atoms, electrons or photons. We have developed a pathway to the construction of quantum devices using ion implantation and demonstrate, using charge transport analysis, that the devices exhibit single electron effects. We construct devices that employ two P donors in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved leading to the fabrication of prototype devices that display quantum effects in the transport of single charge quanta between the islands of implanted donors. (author). 9 refs., 4 figs., 1 tab

  5. Lithium ion implantation effects in MgO (100)

    NARCIS (Netherlands)

    van Huis, MA; Fedorov, AV; van Veen, A; Labohm, F; Schut, H; Mijnarends, PE; Kooi, BJ; De Hosson, JTM; Triftshauser, W; Kogel, G; Sperr, P

    2001-01-01

    Single crystals of MgO (100) were implanted with 10(16) (6)Li ions cm(-2) at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical

  6. Observations of energetic helium ions in the Earth's radiation belts during a sequence of geomagnetic storms

    International Nuclear Information System (INIS)

    Spjeldvik, W.N.; Fritz, T.A.

    1981-01-01

    Every year a significant number of magnetic storms disturb the earth's magnetosphere and the trapped particle populations. In this paper, we present observations of energetic (MeV) helium ions made with Explorer 45 during a sequence of magnetic storms during June through December of 1972. The first of these storms started on June 17 and had a Dst index excursion to approx.190 gamma, and the MeV helium ions were perturbed primarily beyond 3 earth radii in the equatorial radiation belts with a typical flux increase of an order of magnitude at L = 4. The second storm period took place during August and was associated with very major solar flare activity. Although the Dst extremum was at best 35 gamma less than the June storm, this period can be characterized as irregular (or multi-storm) with strong compression of the magnetosphere and very large (order of magnitude) MeV helium ion flux enhancements down to Lapprox.2. Following this injection the trapped helium ion fluxes showed positive spectral slope with the peak beyond 3.15 MeV at L = 2.5; and at the lowest observable L shells (Lapprox.2--3) little flux decay (tau>100 days) was seen during the rest of the year. Any effects of two subsequent major magnetic storms in September and November were essentially undetectable in the prolonged after-effect of the August solar flare associated MeV helium ion injection. The helium ion radial profile of the phase space density showed a significant negative slope during this period, and we infer that radial diffusion constitutes a significant loss of helium ions on L shells above Lapprox. =4 during the aftermath of the August 1972 magnetic storm

  7. Electron microscopy studies of ion implanted silicon

    International Nuclear Information System (INIS)

    Seshan, K.

    1975-11-01

    The nature of defects resulting from the implantation of phosphorous ions into doped silicon and a model of how they form are reported. This involved an electron microscope study of the crystallographic defects (in the 300A size range in concentration of 10 15 /cm 3 ) that form upon annealing. Images formed by these crystallographic defects are complex and that nonconventional imaging techniques are required for their characterization. The images of these small defects (about 300A) are sensitive to various parameters, such as foil thickness, their position in the foil, and diffracting conditions. The defects were found to be mostly interstitial hexagonal Frank loops lying on the four [111] planes and a few perfect interstitial loops; these loops occurred in concentrations of about 10 16 /cm 3 . In addition, ''rod like'' linear defects that are shown to be interstitial are also found in concentrations of 10 13 /cm 3 . It was found that the linear defects require boron for their formation. A model is proposed to account for the interstitial defects. The number of point defects that make up the defects is of the same order as the number of implanted ions. The model predicts that only interstitial loops ought to be observed in agreement with several recent investigations. Dislocation models of the loops are examined and it is shown that phosphorous ions could segregate to the Frank loops, changing their displacement vectors to a/x[111]. (x greater than 3) thus explaining the contrast effects observed. It would also explain the relative electrical inactivity of P + ion implants

  8. Paramagnetism in ion-implanted oxides

    CERN Document Server

    Mølholt, Torben Esmann; Gíslason, Hafliði Pétur; Ólafsson, Sveinn

    This thesis describes the investigation on para-magnetism in dilute ion-implanted single-crystal oxide samples studied by on- and off-line $^{57}$Fe emission Mössbauer spectroscopy. The ion-implantation of the radioactive isotopes ( $^{57}$Mn and $^{57}$Co) was performed at the ISOLDE facility at CERN in Geneva, Switzerland. The off-line measurements were performed at Aarhus University, Denmark. Mössbauer spectroscopy is a unique method, giving simultaneously local information on valence/spin state of the $^{57}$Fe probe atoms, site symmetry and magnetic properties on an atomic scale. The utilisation of emission Mössbauer spectroscopy opens up many new possibilities compared with traditional transmission Mössbauer spectroscopy. Among them is the possibility of working with a low concentration below 10$^{-4}$ –10$^{-3}$ at.%, where the implanted Mössbauer $^{57}$Fe probes are truly dilute impurities exclusively interacting with their nearest neighbours and therefore the possibility of crea...

  9. High energy iron ion implantation into sapphire

    International Nuclear Information System (INIS)

    Allen, W.R.; Pedraza, D.F.

    1990-01-01

    Sapphire specimens of c-axis orientation were implanted at room temperature with iron ions at energies of 1.2 and of 2 MeV to various fluences up to 8 x 10 16 cm -2 . The damage induced by the implantations was assessed by Rutherford backscattering spectroscopy in random and channeling geometries. Dechanneling in both sublattices was observed to saturate for all implantation conditions. Disorder in the aluminum sublattice was found to increase with depth at a significantly slower rate than in the oxygen sublattice. In the oxygen sublattice, a relative yield, χ, of 0.80 ± 0.11 was attained at a depth of 0.1 μm and remained constant up to the measured depth of 0.45 μm. In the aluminum sublattice, the disorder increased with depth and the dechanneling asymptotically approached χ =0.70 ± 0.04 at 0.45 μm. These results are discussed and compared with those for shallower Fe implantations obtained by other researchers

  10. Studying of ion implantation effect on the biology in China

    International Nuclear Information System (INIS)

    Yu Zengliang

    1993-04-01

    Since low energy ion effect on the biology was observed, the ion implantation as a new mutagenic source has been widely used in improving crops and modifying microbes in China. The basic phenomenon of ion implantation effect on the biology and analytical results are reported, and the examples of its application and its further development are shown

  11. Low energy helium ion irradiation induced nanostructure formation on tungsten surface

    International Nuclear Information System (INIS)

    Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

    2017-01-01

    We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10 24 –1.6 × 10 25 ions m −2 ), and flux (2.0 × 10 20 –5.5 × 10 20 ion m −2 s −1 ). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

  12. Low energy helium ion irradiation induced nanostructure formation on tungsten surface

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ajlony, A., E-mail: montaserajlony@yahoo.com; Tripathi, J.K.; Hassanein, A.

    2017-05-15

    We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10{sup 24}–1.6 × 10{sup 25} ions m{sup −2}), and flux (2.0 × 10{sup 20}–5.5 × 10{sup 20} ion m{sup −2} s{sup −1}). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

  13. Study of helium diffusion, implanted at a cyclotron, in face-centered cubic metals: Au, Ag and Al

    International Nuclear Information System (INIS)

    Sciani, V.

    1985-01-01

    Helium in metals is produced by nuclear reactions of energetic particles. In nuclear technology the interest on helium in metals is import, due to its production by (n, α) reaction. Because helium has extremely low solubility in metals, the precipitation in the form of filled bubbles at elevated temperatures occurs, which have detrimental effects on mechanical properties and may limit the lifetime of structural components. One typical example is the high temperature embrittlement. The nucleation and growth of the bubbles strongly depends on the mobility of the helium. This work presents the study of helium diffusion in Au, Ag and Al at temperatures above room temperature. The helium created by (n, α) reactions has been simulated by homogeneous alpha particles implantation in cyclotron, at room temperature, in specimens of thicknesses between 5 and 50 μm and helium concentration between 10 -3 to 10 ppm. After implantation, the specimens were dropped in a furnace in a UHV-chamber and the diffusion was measured by observing the He-release during linear and isothermal annealings. The occurence of free diffusion was comparing the dependence of release kinetics on helium concentration, sample thickness, time and heating rate to diffusion theory and is clearly separeted from agglomeration process. The diffusion constants of helium in Au, Ag and Al follow an Arrhenius behavior, with: Au:D o =10 -1.0 cm 2 /s ΔH=1.70eV Ag:D 0 =10 -1.2 cm 2 /s ΔH=1.51eV Al:D o =10 +0.5 cm 2 /s ΔH=1.40eV. The results are compared to self-diffusion and to the diffusion of other gases in these metals. Comparison with theoretical estimates favours the vacancy mechanism for helium diffusion in Au, Ag and Al. (author) [pt

  14. Production of Endohedral Fullerenes by Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Diener, M.D.; Alford, J. M.; Mirzadeh, S.

    2007-05-31

    The empty interior cavity of fullerenes has long been touted for containment of radionuclides during in vivo transport, during radioimmunotherapy (RIT) and radioimaging for example. As the chemistry required to open a hole in fullerene is complex and exceedingly unlikely to occur in vivo, and conformational stability of the fullerene cage is absolute, atoms trapped within fullerenes can only be released during extremely energetic events. Encapsulating radionuclides in fullerenes could therefore potentially eliminate undesired toxicity resulting from leakage and catabolism of radionuclides administered with other techniques. At the start of this project however, methods for production of transition metal and p-electron metal endohedral fullerenes were completely unknown, and only one method for production of endohedral radiofullerenes was known. They therefore investigated three different methods for the production of therapeutically useful endohedral metallofullerenes: (1) implantation of ions using the high intensity ion beam at the Oak Ridge National Laboratory (ORNL) Surface Modification and Characterization Research Center (SMAC) and fullerenes as the target; (2) implantation of ions using the recoil energy following alpha decay; and (3) implantation of ions using the recoil energy following neutron capture, using ORNL's High Flux Isotope Reactor (HFIR) as a thermal neutron source. While they were unable to obtain evidence of successful implantation using the ion beam at SMAC, recoil following alpha decay and neutron capture were both found to be economically viable methods for the production of therapeutically useful radiofullerenes. In this report, the procedures for preparing fullerenes containing the isotopes {sup 212}Pb, {sup 212}Bi, {sup 213}Bi, and {sup 177}Lu are described. None of these endohedral fullerenes had ever previously been prepared, and all of these radioisotopes are actively under investigation for RIT. Additionally, the chemistry for

  15. Computational stochastic model of ions implantation

    Energy Technology Data Exchange (ETDEWEB)

    Zmievskaya, Galina I., E-mail: zmi@gmail.ru; Bondareva, Anna L., E-mail: bal310775@yandex.ru [M.V. Keldysh Institute of Applied Mathematics RAS, 4,Miusskaya sq., 125047 Moscow (Russian Federation); Levchenko, Tatiana V., E-mail: tatlevchenko@mail.ru [VNII Geosystem Russian Federal Center, Varshavskoye roadway, 8, Moscow (Russian Federation); Maino, Giuseppe, E-mail: giuseppe.maino@enea.it [Scuola di Lettere e BeniCulturali, University di Bologna, sede di Ravenna, via Mariani 5, 48100 Ravenna (Italy)

    2015-03-10

    Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.

  16. Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation

    International Nuclear Information System (INIS)

    Cheng-Sen, Liu; Yu-Jia, Fan; Nan, Zhang; Li, Guan; Yuan, Yao; De-Zhen, Wang

    2010-01-01

    A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally. (physics of gases, plasmas, and electric discharges)

  17. Wear properties of metal ion implanted 4140 steel

    International Nuclear Information System (INIS)

    Evans, P.J.; Paoloni, F.J.

    1994-01-01

    AISI type 4140 (high tensile) steel has been implanted with tungsten and titanium using a metal vapour vacuum arc ion source. Doses in the range (1-5)x10 16 ionscm -2 were implanted to a depth of approximately 30nm. The relative wear resistance between non-implanted and implanted specimens has been estimated using pin-on-disc and abrasive wear tests. Implantation of titanium decreased the area of wear tracks by a factor of 5 over unimplanted steel. In some cases the steel was also hardened by a liquid carburization treatment before implantation. Abrasion tests revealed a further improvement in wear resistance on this material following ion irradiation. ((orig.))

  18. Surface modification of yttria stabilized zirconia by ion implantation

    International Nuclear Information System (INIS)

    Scholten, D.

    1987-01-01

    The results of investigations of surface modification by ion implantation in zirconia are described. As dopant material, iron was investigated thoroughly. The depth distribution of implanted ions depends on implantation parameters and the dopant-matrix system. The investigations of thermal stability of some implanted iron profiles by RBS and AES are described. Special interest lies in the thermal stability under working conditions of the zirconia material (400-1000 0 C). Radiation damage introduced in the implanted layer was investigated using transmission electron microscopy on polycrystalline material and channeling experiments on a single crystal implanted with iron. 179 refs.; 87 figs.; 20 tabs

  19. Simulation of ion implantation for ULSI technology

    International Nuclear Information System (INIS)

    Hoessinger, A.

    2000-07-01

    In modern semiconductor technology ion implantation has turned out to be the most important technique to introduce dopant atoms into semiconducting materials. The major advantage of the ion implantation technique is the high controllability and reproducibility of the process parameters influencing the doping distributions. Furthermore, very shallow doping profiles can be formed, which are a prerequisite for ULSI (ultra large scale integration) technology. Since it is mainly ion implantation which determines the distribution of the dopants and thereby the electrical properties of the semiconductor devices highly accurate simulation methods for ion implantation processes are required to be able to predict and optimize the behavior of integrated circuits. In recent years successively shrinking device dimensions and new design concepts have shown the necessity of a full three-dimensional treatment of simulation problems, e.g. the simulation of MOS transistors with narrow gates, or vertical transistors. Three-dimensional simulations obviously require large computation times and a lot of memory. Therefore, it is a waste of computational resources if a three-dimensional simulation would be applied to all applications. Several problems, like the buried layer or the well formation of an MOS transistor can be analyzed as accurate by simpler two-dimensional or even one-dimensional simulations. Since it should be easy to switch the dimension of the simulation without recalibrating a simulator, it is not desirable to use different simulators, which eventually use different models, for the simulation of one-dimensional, two-dimensional and three-dimensional problems. The goal of this work was to further improve a Monte-Carlo ion implantation simulator developed over the last fifteen years within the scope of several PhD theses. As part of this work several new models and methods have been developed and implemented to improve the accuracy and the efficiency of the simulator, in

  20. Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Assmann, W. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany)]. E-mail: walter.assmann@lmu.de; Schubert, M. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany); Held, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany); Pichler, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Muenchen (Germany); Chill, A. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Kiermaier, S. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Schloesser, K. [Forschungszentrum Karlsruhe, 76021 Karlsruhe (Germany); Busch, H. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Schenk, K. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Streufert, D. [Acri.Tec GmbH, 16761 Hennigsdorf (Germany); Lanzl, I. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany)

    2007-04-15

    A biodegradable, {beta}-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the {beta}-emitter {sup 32}P. The influence of ion implantation and gamma sterilisation on degradation and {sup 32}P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (10{sup 15} ions/cm{sup 2}) and gamma dose (25 kGy) are found to be tolerable.

  1. Quantum effects in ion implanted devices

    International Nuclear Information System (INIS)

    Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Dzurak, A.S.; Clark, R.G.

    2006-01-01

    Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because of the need to control quantum states at the level of individual atoms, electrons or photons. We have used ion implantation to fabricate devices on the scale of 10 nm that have allowed the development and test of nanocircuitry for the control of charge transport at the level of single electrons. This fabrication method is compatible with the construction of devices that employ counted P dopants in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon substrates by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved. Prototype devices fabricated by this method have been used to investigate quantum effects in the control and transport of single electrons with potential applications to solid state quantum information processing devices

  2. Formation of InN phase by sequential ion implantation

    International Nuclear Information System (INIS)

    Santhana Raman, P.; Ravichandran, V.; Nair, K.G.M.; Kesavamoorthy, R.; Kalavathi, S.; Panigrahi, B.K.; Dhara, S.

    2006-01-01

    Formation of InN phase by sequentially implanting nitrogen on indium implanted silica was demonstrated. The growth of embedded InN phase on as-implanted and post-implantation annealed sample was studied using Glancing Incidence X-Ray Diffraction (GIXRD) and Raman spectroscopy. Existence of both cubic and hexagonal phases of InN was observed. Results of irradiation induced ripening of In nanoclusters due to N + ion implantation was also studied. (author)

  3. Effects of helium ions of an early embryo on postembryonic leaf development in Brassica napus L.

    Energy Technology Data Exchange (ETDEWEB)

    Sakurai, Noboru [Tokyo Metropolitan Industrial Technology Research Institute, Tokyo (Japan); Minami, Harufumi [Tokyo Metropolitan Agricultural Experiment Station, Tachikawa, Tokyo (Japan); Shikazono, Naoya; Tanaka, Atsushi; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    2000-12-01

    We examined postembryonic effects after helium ion and gamma ray irradiation of an isolated whole flower (a flower with pedicel) of Brassica napus through a flower organ culture, and estimated the effects of irradiation on embryogenesis in sexual reproductive stages. The whole flowers were irradiated with 30 Gy of helium ions and gamma rays in the early globular embryo and/or torpedo embryo stages. The helium ion and gamma ray irradiation of early globular embryos caused some drastic malformations in the first true leaves. Those malformations were classified into four types: cup-shaped, funnel-shaped, shrunk and the other varied leaves. The types were observed in 40% of plants that developed first true leaves. Both cup-shaped and funnel-shaped types were observed in over 15%. On the other hand, the irradiation of gamma rays of torpedo embryos caused sectors lacking chlorophyll in first true leaves. (author)

  4. Standard Guide for Simulation of Helium Effects in Irradiated Metals

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1996-01-01

    1.1 This guide provides advice for conducting experiments to investigate the effects of helium on the properties of metals where the technique for introducing the helium differs in some way from the actual mechanism of introduction of helium in service. Simulation techniques considered for introducing helium shall include charged particle implantation, exposure to α-emitting radioisotopes, and tritium decay techniques. Procedures for the analysis of helium content and helium distribution within the specimen are also recommended. 1.2 Two other methods for introducing helium into irradiated materials are not covered in this guide. They are the enhancement of helium production in nickel-bearing alloys by spectral tailoring in mixed-spectrum fission reactors, and isotopic tailoring in both fast and mixed-spectrum fission reactors. These techniques are described in Refs (1-5). Dual ion beam techniques (6) for simultaneously implanting helium and generating displacement damage are also not included here. This lat...

  5. The JANNUS Saclay facility: A new platform for materials irradiation, implantation and ion beam analysis

    Energy Technology Data Exchange (ETDEWEB)

    Pellegrino, S., E-mail: stephanie.pellegrino@cea.fr [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Trocellier, P.; Miro, S.; Serruys, Y.; Bordas, E.; Martin, H. [CEA, DEN, Service de Recherches de Metallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Chaabane, N.; Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Gallien, J.P.; Beck, L. [CEA, DEN, Service de Recherches de Metallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2012-02-15

    The third accelerator of the multi-ion irradiation platform JANNUS (Joint Accelerators for Nanosciences and NUclear Simulation), a 6SDH-2 Pelletron from National Electrostatic Corporation, Middleton was installed at Saclay in October 2009. The first triple beam irradiation combining Fe, He and H ion beams has been performed in March 2010. In the first part of this paper, we give a technical description of the triple beam facility, its performances and experimental capabilities. Typically, damage dose up to 100 dpa can be reached in 10 h irradiation with heavy ion beams, with or without simultaneous bombardment by protons, helium-4 ions or any other heavy ion beam. In the second part of this paper, we illustrate some IBA results obtained after irradiation and implantation experiments.

  6. Adherent zirconia films by reactive ion implantation

    International Nuclear Information System (INIS)

    Bunker, S.N.; Armini, A.J.

    1993-01-01

    Conventional methods of forming ceramic coatings on metal substrates, such as CVD or plasma spray, typically retain a sharp interface and may have adhesion problems. In order to produce a completely mixed interface for better adhesion, a method using reactive ion implantation was used which can grow a thick stoichiometric film of an oxide ceramic starting from inside the substrate. Zirconium oxide ceramic films have been produced by this technique using a high-energy zirconium ion beam in an oxygen gas ambient. Compositional data are shown based on Auger electron spectroscopy of the film. Tribological properties of the layer were determined from wear and friction measurements using a pin-on-disk test apparatus. The adhesion was measured both by a scratch technique as well as by thermal shock. Results show an extremely adherent ZrO 2 film with good tribological properties

  7. Evaluation of stabilization techniques for ion implant processing

    Science.gov (United States)

    Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Narcy, Mark E.; Livesay, William R.

    1999-06-01

    With the integration of high current ion implant processing into volume CMOS manufacturing, the need for photoresist stabilization to achieve a stable ion implant process is critical. This study compares electron beam stabilization, a non-thermal process, with more traditional thermal stabilization techniques such as hot plate baking and vacuum oven processing. The electron beam processing is carried out in a flood exposure system with no active heating of the wafer. These stabilization techniques are applied to typical ion implant processes that might be found in a CMOS production process flow. The stabilization processes are applied to a 1.1 micrometers thick PFI-38A i-line photoresist film prior to ion implant processing. Post stabilization CD variation is detailed with respect to wall slope and feature integrity. SEM photographs detail the effects of the stabilization technique on photoresist features. The thermal stability of the photoresist is shown for different levels of stabilization and post stabilization thermal cycling. Thermal flow stability of the photoresist is detailed via SEM photographs. A significant improvement in thermal stability is achieved with the electron beam process, such that photoresist features are stable to temperatures in excess of 200 degrees C. Ion implant processing parameters are evaluated and compared for the different stabilization methods. Ion implant system end-station chamber pressure is detailed as a function of ion implant process and stabilization condition. The ion implant process conditions are detailed for varying factors such as ion current, energy, and total dose. A reduction in the ion implant systems end-station chamber pressure is achieved with the electron beam stabilization process over the other techniques considered. This reduction in end-station chamber pressure is shown to provide a reduction in total process time for a given ion implant dose. Improvements in the ion implant process are detailed across

  8. The role of helium ion microscopy in the characterisation of complex three-dimensional nanostructures

    International Nuclear Information System (INIS)

    Rodenburg, C.; Liu, X.; Jepson, M.A.E.; Zhou, Z.; Rainforth, W.M.; Rodenburg, J.M.

    2010-01-01

    This work addresses two major issues relating to Helium Ion Microscopy (HeIM). First we show that HeIM is capable of solving the interpretation difficulties that arise when complex three-dimensional structures are imaged using traditional high lateral resolution techniques which are transmission based, such as scanning transmission electron microscopy (STEM). Secondly we use a nano-composite coating consisting of amorphous carbon embedded in chromium rich matrix to estimate the mean escape depth for amorphous carbon for secondary electrons generated by helium ion impact as a measure of HeIM depth resolution.

  9. Radiolysis study of actinide complexing agent by irradiation with helium ion beam

    International Nuclear Information System (INIS)

    Sugo, Yumi; Taguchi, Mitsumasa; Sasaki, Yuji; Hirota, Koichi; Kimura, Takaumi

    2009-01-01

    α-Radiolysis of N,N,N',N'-tetraoctyldiglycolamide (TODGA) in n-dodecane was investigated by the irradiation with helium ion beam provided by a tandem accelerator. The radiation chemical yield for the degradation of TODGA by helium ion beam irradiation was less than that by γ-rays irradiation. It is considered that the radical cations of n-dodecane, which contribute to the charge transfer reaction with the TODGA molecules, decrease by recombination in track by high LET radiations such as α-particles.

  10. Implementation of spot scanning dose optimization and dose calculation for helium ions in Hyperion

    DEFF Research Database (Denmark)

    Fuchs, Hermann; Alber, Markus; Schreiner, Thomas

    2015-01-01

    PURPOSE: Helium ions ((4)He) may supplement current particle beam therapy strategies as they possess advantages in physical dose distribution over protons. To assess potential clinical advantages, a dose calculation module accounting for relative biological effectiveness (RBE) was developed...... published so far. The advantage of (4)He seems to lie in the reduction of dose to surrounding tissue and to OARs. Nevertheless, additional biological experiments and treatment planning studies with larger patient numbers and more tumor indications are necessary to study the possible benefits of helium ion...

  11. Ion Implantation of Calcium and Zinc in Magnesium for Biodegradable Implant Applications

    Directory of Open Access Journals (Sweden)

    Sahadev Somasundaram

    2018-01-01

    Full Text Available In this study, magnesium was implanted with calcium-ion and zinc-ion at fluences of 1015, 1016, and 1017 ion·cm−2, and its in vitro degradation behaviour was evaluated using electrochemical techniques in simulated body fluid (SBF. Rutherford backscattering spectrometry (RBS revealed that the implanted ions formed layers within the passive magnesium-oxide/hydroxide layers. Electrochemical impedance spectroscopy (EIS results demonstrated that calcium-ion implantation at a fluence of 1015 ions·cm−2 increased the polarisation resistance by 24%, but higher fluences showed no appreciable improvement. In the case of zinc-ion implantation, increase in the fluence decreased the polarisation resistance. A fluence of 1017 ion·cm−2 decreased the polarisation resistance by 65%, and fluences of 1015 and 1016 showed only marginal effect. Similarly, potentiodynamic polarisation results also suggested that low fluence of calcium-ion decreased the degradation rate by 38% and high fluence of zinc-ion increased the degradation rate by 61%. All the post-polarized ion-implanted samples and the bare metal revealed phosphate and carbonate formation. However, the improved degradative behaviour in calcium-ion implanted samples can be due to a relatively better passivation, whereas the reduction in degradation resistance in zinc-ion implanted samples can be attributed to the micro-galvanic effect.

  12. Electrochemical investigations of ion-implanted oxide films

    International Nuclear Information System (INIS)

    Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

    1985-01-01

    Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

  13. Depth distribution of nitrogen in silicon from plasma ion implantation

    International Nuclear Information System (INIS)

    Vajo, J.J.; Williams, J.D.; Wei, R.; Wilson, R.G.; Matossian, J.N.

    1994-01-01

    Plasma Ion Implantation (PII) is an ion implantation technique that eliminates the line-of-sight restriction of conventional ion-beam implantation and therefore allows for cost effective surface modification of large-scale objects or large-number of small-scale objects. In PII, a part to be implanted is immersed in a low-pressure (10 -4 --10 -5 Torr), partially-ionized plasma that surrounds the part with a plasma sheath. The part is negatively pulse biased up to 100 keV using a repetitive train (100--1,000 Hz) of short-duration (10--40 μsec) voltage pulses. The applied voltage develops across the sheath and accelerates plasma ions into the surface, implanting them omnidirectionally and simultaneously over the entire surface of the part. The depth distribution of the implanted ions influences the extent and type of surface modification achieved and depends upon many factors. These include three rise and fall time of the voltage-pulse waveform, the voltage-pulse amplitude, the ion specie, the ion density, and the temperature of the target. Understanding the contributions to the depth distribution from each of these factors will enable prediction of conditions that will be useful for implantation of large complex parts. To investigate the contributions to the measured depth distributions from these factors nitrogen, predominantly as N + 2 , has been implanted into silicon using PII at 50 and 100 keV (25 and 50 keV per N atom). The implanted depth distributions have been determined using secondary ion mass spectroscopy and Auger electron spectroscopy depth profiling. The distributions differ from the typical, approximately Gaussian, profiles that result from conventional mass selected monoenergetic ion beam implantation. In comparison with ion beam implants and numerical simulations the profiles appear ''filled-in'' with an approximately constant nitrogen concentration for depths less than the expected average ion range

  14. SIMS analysis of isotopic impurities in ion implants

    International Nuclear Information System (INIS)

    Sykes, D.E.; Blunt, R.T.

    1986-01-01

    The n-type dopant species Si and Se used for ion implantation in GaAs are multi-isotopic with the most abundant isotope not chosen because of potential interferences with residual gases. SIMS analysis of a range of 29 Si implants produced by several designs of ion implanter all showed significant 28 Si impurity with a different depth distribution from that of the deliberately implanted 29 Si isotope. This effect was observed to varying degrees with all fifteen implanters examined and in every 29 Si implant analysed to date 29 Si + , 29 Si ++ and 30 Si implants all show the same effect. In the case of Se implantation, poor mass resolution results in the implantation of all isotopes with the same implant distribution (i.e. energy), whilst implants carried out with good mass resolution show the implantation of all isotopes with the characteristic lower depth distribution of the impurity isotopes as found in the Si implants. This effect has also been observed in p-type implants into GaAs (Mg) and for Ga implanted in Si. A tentative explanation of the effect is proposed. (author)

  15. Energization of helium ions by proton-induced hydromagnetic waves

    International Nuclear Information System (INIS)

    Gendrin, R.; Roux, A.

    1980-01-01

    We consider the diffusion of He + ions under the influence of ion cyclotron waves generated in a plasma consisting of three different ion populations: a thermal isotropic population containing both H + and He + ions and an energetic H + population, with a positive anisotropy A=T/sub perpendicular//T/sub parallel/-1. We compute, in the velocity space upsilon/sub parallel/, upsilon/sub perpendicular/, the diffusion curves that He + ions will follow in the presence of ion cyclotron waves propagating in such a medium. We show that for small concentrations of the He + ions, of the order of 1 to approx.10%, these ions can be energized by such a process up to and above suprathermal energies (E> or approx. =20 eV). On some occasions the He + ions may even reach energies of the order of the Alfven energy of the cold plasma population: E/sub a/approx. =m/sub p/V/sub a/ 2 approx. =5 keV. Characteristic diffusion times, in pitch angle and energy, for both ion species, are evaluated. They are of the order of 2 to 20 min. These theoretical results are discussed in the frame of recent observations by Geos experimenters showing the close association that exists between the occurrence of ion cyclotron ULF waves and the presence of thermal or supra-thermal He + ions in the equatorial region of the magnetosphere

  16. Corrosion resistance of uranium with carbon ion implantation

    International Nuclear Information System (INIS)

    Liang Hongwei; Yan Dongxu; Bai Bin; Lang Dingmu; Xiao Hong; Wang Xiaohong

    2008-01-01

    The carbon modified layers prepared on uranium surface by carbon ion implantation, gradient implantation, recoil implantation and ion beam assisted deposition process techniques were studied. Depth profile elements of the samples based on Auger electron spectroscopy, phase composition identified by X-ray diffraction as well as corrosion resistance of the surface modified layers by electrochemistry tester and humid-thermal oxidation test were carried out. The carbon modified layers can be obtained by above techniques. The samples deposited with 45 keV ion bombardment, implanted by 50 keV ions and implanted with gradient energies are of better corrosion resistance properties. The samples deposited carbon before C + implantation and C + assisted deposition exhibit worse corrosion resistance properties. The modified layers are dominantly dot-corraded, which grows from the dots into substructure, however, the assisted deposition samples have comparatively high carbon composition and are corraded weakly. (authors)

  17. Hydrogenlike nitrogen ions collision with helium into excited states

    International Nuclear Information System (INIS)

    Pan Guangyan; Yang Feng; Li Dawan; Xu Qian; Liu Huiping; Zhao Mengchun

    1991-01-01

    The emission spectra have been measured in collisions between N 6+ and He using the LHT-30 VUV Monochromator. The wavelength range is 10 nm-80 nm, the energy of N 6+ ions is 90 keV, the current of ion beam in the collision region is about 10 μA. Recently, the authors have investigated the electron capture processes and incident ions excitation in the velocity of N 6+ ions about 0.5 atomic unit. The emission spectrum of N V, N VI and N VII liens is given in collisions of N 6+ with He at 90 keV of ions energy

  18. Estimated solar wind-implanted helium-3 distribution on the Moon

    Science.gov (United States)

    Johnson, J. R.; Swindle, T.D.; Lucey, P.G.

    1999-01-01

    Among the solar wind-implanted volatiles present in the lunar regolith, 3 He is possibly the most valuable resource because of its potential as a fusion fuel. The abundance of 3 He in the lunar regolith at a given location depends on surface maturity, the amount of solar wind fluence, and titanium content, because ilmenite (FeTiO3) retains helium much better than other major lunar minerals. Surface maturity and TiO2 maps from Clementine multispectral data sets are combined here with a solar wind fluence model to produce a 3He abundance map of the Moon. Comparison of the predicted 3He values to landing site observations shows good correlation. The highest 3He abundances occur in the farside maria (due to greater solar wind fluence received) and in higher TiO2 nearside mare regions.

  19. Ion implantation induced blistering of rutile single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

    2015-07-01

    The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

  20. Adhesive, abrasive and oxidative wear in ion-implanted metals

    International Nuclear Information System (INIS)

    Dearnaley, G.

    1985-01-01

    Ion implantation is increasingly being used to provide wear resistance in metals and cemented tungsten carbides. Field trials and laboratory tests indicate that the best performance is achieved in mild abrasive wear. This can be understood in terms of the classification of wear modes (adhesive, abrasive, oxidative etc.) introduced by Burwell. Surface hardening and work hardenability are the major properties to be enhanced by ion implantation. The implantation of nitrogen or dual implants of metallic and interstitial species are effective. Recently developed techniques of ion-beam-enhanced deposition of coatings can further improve wear resistance by lessening adhesion and oxidation. In order to support such hard coatings, ion implantation of nitrogen can be used as a preliminary treatment. There is thus emerging a versatile group of related hard vacuum treatments involving intense beams of nitrogen ions for the purpose of tailoring metal surfaces to resist wear. (Auth.)

  1. Synthesis of graphene by MEVVA source ion implantation

    International Nuclear Information System (INIS)

    Ying, J.J.; Xiao, X.H.; Dai, Z.G.; Wu, W.; Li, W.Q.; Mei, F.; Cai, G.X.; Ren, F.; Jiang, C.Z.

    2013-01-01

    Ion implantation provides a new synthesis route for graphene, and few-layered graphene synthesis by ion implantation has been reported. Here we show the synthesis of a single layer of high-quality graphene by Metal Vapor Vacuum Arc (MEVVA) source ion implantation. Polycrystalline nickel and copper thin films are implanted with MEVVA source carbon ions at 40 kV, followed by high-temperature thermal annealing and quenching. A Raman spectrum is applied to probe the quality and thickness of the prepared graphene. A single layer of high-quality graphene is grown on the nickel films, but not on the copper films. The growth mechanisms on the nickel and copper films are explained. MEVVA source ion implantation has been widely applied in industrial applications, demonstrating that this synthesis method can be generalized for industrial production

  2. In-situ deposition of sacrificial layers during ion implantation

    International Nuclear Information System (INIS)

    Anders, A.; Anders, S.; Brown, I.G.; Yu, K.M.

    1995-02-01

    The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer deposited prior to ion implantation can lead to an enhanced retained dose. However, a higher ion energy is required to obtain a similar implantation depth due to the stopping of ions in the sacrificial layer. It is desirable to have a sacrificial layer of only a few monolayers thickness which can be renewed after it has been sputtered away. We explain the concept and describe two examples: (i) metal ion implantation using simultaneously a vacuum arc ion source and filtered vacuum arc plasma sources, and (ii) Metal Plasma Immersion Ion Implantation and Deposition (MePIIID). In MePIIID, the target is immersed in a metal or carbon plasma and a negative, repetitively pulsed bias voltage is applied. Ions are implanted when the bias is applied while the sacrificial layer suffers sputtering. Low-energy thin film deposition - repair of the sacrificial layer -- occurs between bias pulses. No foreign atoms are incorporated into the target since the sacrificial film is made of the same ion species as used in the implantation phase

  3. The GOES-16 Energetic Heavy Ion Instrument Proton and Helium Fluxes for Space Weather Applications

    Science.gov (United States)

    Connell, J. J.; Lopate, C.

    2017-12-01

    The Energetic Heavy Ion Sensor (EHIS) was built by the University of New Hampshire, subcontracted to Assurance Technology Corporation, as part of the Space Environmental In-Situ Suite (SEISS) on the new GOES-16 satellite, in geostationary Earth orbit. The EHIS measures energetic ions in space over the range 10-200 MeV for protons, and energy ranges for heavy ions corresponding to the same stopping range. Though an operational satellite instrument, EHIS will supply high quality data for scientific studies. For the GOES Level 1-B and Level 2 data products, protons and helium are distinguished in the EHIS using discriminator trigger logic. Measurements are provided in five energy bands. The instrumental cadence of these rates is 3 seconds. However, the primary Level 1-B proton and helium data products are 1-minute and 5-minute averages. The data latency is 1 minute, so data products can be used for real-time predictions as well as general science studies. Protons and helium, comprising approximately 99% of all energetic ions in space are of great importance for Space Weather predictions. We discuss the preliminary EHIS proton and helium data results and their application to Space Weather. The EHIS instrument development project was funded by NASA under contract NNG06HX01C.

  4. Interpretation of x-ray emission from lithium-like ions in collisions with helium

    International Nuclear Information System (INIS)

    Armen, G.B.; Aaberg, T.

    1994-01-01

    We consider the continuous x-ray distribution on the low-energy side of the K α line in projectile spectra coincident with single-electron loss in collision of lithium-like ions with helium. We demonstrate that the observed distributions are due to two-photon emission rather than to the radiative Auger effect. (author)

  5. Polyatomic ions from a high current ion implanter driven by a liquid metal ion source

    Science.gov (United States)

    Pilz, W.; Laufer, P.; Tajmar, M.; Böttger, R.; Bischoff, L.

    2017-12-01

    High current liquid metal ion sources are well known and found their first application as field emission electric propulsion thrusters in space technology. The aim of this work is the adaption of such kind of sources in broad ion beam technology. Surface patterning based on self-organized nano-structures on, e.g., semiconductor materials formed by heavy mono- or polyatomic ion irradiation from liquid metal (alloy) ion sources (LMAISs) is a very promising technique. LMAISs are nearly the only type of sources delivering polyatomic ions from about half of the periodic table elements. To overcome the lack of only very small treated areas by applying a focused ion beam equipped with such sources, the technology taken from space propulsion systems was transferred into a large single-end ion implanter. The main component is an ion beam injector based on high current LMAISs combined with suited ion optics allocating ion currents in the μA range in a nearly parallel beam of a few mm in diameter. Different types of LMAIS (needle, porous emitter, and capillary) are presented and characterized. The ion beam injector design is specified as well as the implementation of this module into a 200 kV high current ion implanter operating at the HZDR Ion Beam Center. Finally, the obtained results of large area surface modification of Ge using polyatomic Bi2+ ions at room temperature from a GaBi capillary LMAIS will be presented and discussed.

  6. Channeling effect for low energy ion implantation in Si

    International Nuclear Information System (INIS)

    Cho, K.; Allen, W.R.; Finstad, T.G.; Chu, W.K.; Liu, J.; Wortman, J.J.

    1985-01-01

    Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore require ion implantation at lower energies. The effect of channeling on ion implantation becomes a significant problem for low energy ion implantation. The critical angle for axial and planar channeling increases with decreasing energy. This corresponds to an increased probability for channeling with lowering of ion energy. The industry approach to avoid the channeling problem is to employ a tilt angle of 7 0 between the ion implantation direction and the surface normal. We approach the problem by mapping major crystalline axes and planes near the [100] surface normal. Our analysis indicates that a 7 0 tilt is not an optimum selection in channeling reduction. Tilt angles in the range 5 0 to 6 0 combined with 7 0 +- 0.5 0 rotation from the (100) plane are better selections for the reduction of the channeling effect. The range of suitable angles is a function of the implantation energy. Implantations of boron along well specified crystallographic directions have been carried out by careful alignment and the resulting boron profiles measured by SIMS. (orig.)

  7. The interaction of a nanoscale coherent helium-ion probe with a crystal

    International Nuclear Information System (INIS)

    D'Alfonso, A.J.; Forbes, B.D.; Allen, L.J.

    2013-01-01

    Thickness fringing was recently observed in helium ion microscopy (HIM) when imaging magnesium oxide cubes using a 40 keV convergent probe in scanning transmission mode. Thickness fringing is also observed in electron microscopy and is due to quantum mechanical, coherent, multiple elastic scattering attenuated by inelastic phonon excitation (thermal scattering). A quantum mechanical model for elastic scattering and phonon excitation correctly models the thickness fringes formed by the helium ions. However, unlike the electron case, the signal in the diffraction plane is due mainly to the channeling of ions which have first undergone inelastic thermal scattering in the first few atomic layers so that the origin of the thickness fringes is not due to coherent interference effects. This quantum mechanical model affords insight into the interaction of a nanoscale, focused coherent ion probe with the specimen and allows us to elucidate precisely what is needed to achieve atomic resolution HIM. - Highlights: • Thickness fringing has recently been observed imaging MgO cubes using helium ion microscopy. • A quantum mechanical model for elastic scattering and phonon excitation models the fringes. • The signal is due mainly to the coherent scattering of ions after inelastic thermal scattering. • We elucidate precisely what is needed to achieve atomic resolution HIM

  8. Blistering in a porous surface layer of materials. [He ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Afrikanov, I.N.; Vladimirov, B.G.; Guseva, M.I.; Ivanov, S.M.; Martynenko, Yu.V.; Nikol' skij, Yu.V.; Ryazanov, A.I.

    1981-03-01

    The effect of porous structure on the nature and rate of radiation erosion during implantation of helium ions into nickel and the OKh15N15M3B stainless steel is studied. The investigation results showed sharp dependence of the erosion rate due to blistering on the dimension and density of pores in the by-surface layer. The rate of the surface erosion increased in one order as compared with the control specimens without pores at 1% swelling for stainless steel and 4% for nickel.

  9. Electrical properties of polymer modified by metal ion implantation

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Huixing; Zhang Xiaoji; Deng Zhiwei; Zhou Gu

    2000-01-01

    Polyethylene terephthalate (PET) has been modified by Ag, Cr, Cu and Si ion implantation with a dose range from 1x10 16 to 2x10 17 ions cm -2 using a metal vapor vacuum arc (MEVVA) source. The electrical properties of PET have been changed after metal ion implantation. The resistivity of implanted PET decreased obviously with an increase of ion dose. When metal ion dose of 2x10 17 cm -2 was selected, the resistivity of PET could be less than 10 Ω cm, but when Si ions are implanted, the resistivity of PET would be up to several hundred Ω cm. The results show that the conductive behavior of a metal ion implanted sample is obviously different from Si implantation one. The changes of the structure and composition have been observed with transmission electron microscope (TEM) and X-ray diffraction (XRD). The surface structure is varying after ion implantation and it is believed that the change would cause the improvement of the conductive properties. The mechanism of electrical conduction will be discussed

  10. Fatigue and wear of metalloid-ion-implanted metals

    International Nuclear Information System (INIS)

    Hohmuth, K.; Richter, E.; Rauschenbach, B.; Blochwitz, C.

    1985-01-01

    The effect of metalloid ion implantation on the fatigue behaviour and wear of nickel and two steels has been investigated. These metals were implanted with boron, carbon and nitrogen ions at energies from 30 to 60 keV and with doses from 1 X 10 16 to 1 X 10 18 ions cm -2 at room temperature. The mechanical behaviour of fatigued nickel was studied in push-pull tests at room temperature. Wear measurements were made using a pin-and-disc technique. The surface structure, dislocation arrangement and modification of the implantation profile resulting from mechanical tests on metals which had been implanted with metalloid ions were examined using high voltage electron microscopy, transmission high energy electron diffraction, scanning electron microscopy and Auger electron spectroscopy. It is reported that nitrogen and boron ion implantation improves the fatigue lifetime, changes the number and density of the slip bands and modifies the dislocation arrangements in nickel. The cyclic deformation leads to recrystallization of the boron-ion-induced amorphous structure of nickel and to diffusion of the boron and nitrogen in the direction of the surface. The wear behaviour of steels was improved by implantation of mass-separated ions and by implantation of ions without mass separation. (Auth.)

  11. Evaluation of electron beam stabilization for ion implant processing

    Science.gov (United States)

    Buffat, Stephen J.; Kickel, Bee; Philipps, B.; Adams, J.; Ross, Matthew F.; Minter, Jason P.; Marlowe, Trey; Wong, Selmer S.

    1999-06-01

    With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

  12. Tribological effects of oxygen ion implantation into stainless steel

    International Nuclear Information System (INIS)

    Evans, P.J.; Vilaithong, T.; Yu, L.D.; Monteiro, O.R.; Yu, K.M.; Brown, I.G.

    2000-01-01

    The formation of sub-surface oxide layers by hybrid metal-gas co-implantation into steel and other metals can improve their tribological properties. In this report, we compare the wear and friction performance of previously studied Al + O hybrid implants with that produced by single species oxygen ion (O + ) implantation under similar conditions. The substrates were AISI 304L stainless steel discs polished to a final mirror finish using 1 μm diamond paste, and the ion implantation was done using a conventional swept-beam technique at ion energies of 70 or 140 keV and doses of up to 1x10 17 cm -2 . The wear and friction behaviour of the implanted and unimplanted material was measured with a pin-on-disc tribometer. Here we describe the experimental procedure and results, and discuss the improvement relative to that achieved with surface layers modified by metal-gas co-implantation

  13. DC plasma ion implantation in an inductively coupled RF plasma

    International Nuclear Information System (INIS)

    Silawatshananai, C.; Matan, N.; Pakpum, C.; Pussadee, N.; Srisantitam, P.; Davynov, S.; Vilaithong, T.

    2004-01-01

    Various modes of plasma ion implantation have been investigated in a small inductively coupled 13.6 MHz RF plasma source. Plasma ion implantation with HVDC(up to -10 kV bias) has been investigated in order to incorporate with the conventional implantation of diamond like carbon. In this preliminary work, nitrogen ions are implanted into the stainless steel sample with a dose of 5.5 x 10 -2 cm for a short implanting time of 7 minutes without target cooling. Surface properties such as microhardness, wear rate and the friction coefficient have been improved. X-ray and SEM analyses show distinct structural changes on the surface. A combination of sheath assisted implantation and thermal diffusion may be responsible for improvement in surface properties. (orig.)

  14. The multiple ionization of helium induced by partially stripped carbon ions

    International Nuclear Information System (INIS)

    Cai Xiaohong; Chen Ximeng; Shen Ziyong

    1996-01-01

    The ratios of the double to single ionization cross sections of helium impacted by partially stripped C q+ ions (q = 1,2,3,4) in energy range of 1.5-7.5 MeV were measured by using the time of flight procedure. The n-body classical trajectory Monte Carlo calculation was carried out to get the Olson-Schlachter scaling. The single and double ionization cross sections of helium were obtained by comparing the cross section ratios of the present work with the Olson-Schlachter scaling

  15. Microstructural evolution in dual-ion irradiated 316SS under various helium injection schedules

    International Nuclear Information System (INIS)

    Kohyama, A.; Igata, N.; Ayrault, G.; Tokyo Univ.

    1984-01-01

    Dual-ion irradiated 316 SS samples with various helium injection schedules were studied. The intent of using different schedules was to either approximate the MFR condition, mimic the mixed spectrum reactor condition or mimic the fast reactor condition. The objective of this investigation is to study the influence of these different helium injection schedules on the microstructural development under irradiation. The materials for this study was 316 SS (MFE heat) with three thermomechanical pre-irradiation treatments: solution annealed, solution annealed and aged and 20% cold worked. The cavity nucleation and growth stages were investigated using high resolution TEM. (orig.)

  16. Thin hydroxyapatite surface layers on titanium produced by ion implantation

    CERN Document Server

    Baumann, H; Bilger, G; Jones, D; Symietz, I

    2002-01-01

    In medicine metallic implants are widely used as hip replacement protheses or artificial teeth. The biocompatibility is in all cases the most important requirement. Hydroxyapatite (HAp) is frequently used as coating on metallic implants because of its high acceptance by the human body. In this paper a process is described by which a HAp surface layer is produced by ion implantation with a continuous transition to the bulk material. Calcium and phosphorus ions are successively implanted into titanium under different vacuum conditions by backfilling oxygen into the implantation chamber. Afterwards the implanted samples are thermally treated. The elemental composition inside the implanted region was determined by nuclear analysis methods as (alpha,alpha) backscattering and the resonant nuclear reaction sup 1 H( sup 1 sup 5 N,alpha gamma) sup 1 sup 2 C. The results of X-ray photoelectron spectroscopy indicate the formation of HAp. In addition a first biocompatibility test was performed to compare the growing of m...

  17. Dopant profile engineering of advanced Si MOSFET's using ion implantation

    International Nuclear Information System (INIS)

    Stolk, P.A.; Ponomarev, Y.V.; Schmitz, J.; Brandenburg, A.C.M.C. van; Roes, R.; Montree, A.H.; Woerlee, P.H.

    1999-01-01

    Ion implantation has been used to realize non-uniform, steep retrograde (SR) dopant profiles in the active channel region of advanced Si MOSFET's. After defining the transistor configuration, SR profiles were formed by dopant implantation through the polycrystalline Si gate and the gate oxide (through-the-gate, TG, implantation). The steep nature of the as-implanted profile was retained by applying rapid thermal annealing for dopant activation and implantation damage removal. For NMOS transistors, TG implantation of B yields improved transistor performance through increased carrier mobility, reduced junction capacitances, and reduced susceptibility to short-channel effects. Electrical measurements show that the gate oxide quality is not deteriorated by the ion-induced damage, demonstrating that transistor reliability is preserved. For PMOS transistors, TG implantation of P or As leads to unacceptable source/drain junction broadening as a result of transient enhanced dopant diffusion during thermal activation

  18. Enhancement of electrical conductivity of ion-implanted polymer films

    International Nuclear Information System (INIS)

    Brock, S.

    1985-01-01

    The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21 0 C +/- 1 0 C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F + , Ar + , or As + ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10 18 to 1 x 10 20 ions/m 2 . The conductivity of films implanted with As + was approximately one order greater than those implanted with Ar + , which in turn was approximately one-half order greater than those implanted with F + . The conductivity of the most conductive film ∼1 S/m) was almost 14 orders of magnitude greater than the pristine PET film. Except for the three PET samples implanted at fluences near 1 x 10 20 ions/m 2 with F + , Ar + , and As + ions, all implanted films were ohmic up to an electric field strength of 600 kV/m. The temperature dependence of the conductivity of the three PET films implanted near a fluence of 1 x 10 20 ions/m 2 was measured over the range of 80 K < T < 300 K

  19. EMISSION SPECTRUM OF HELIUM-LIKE IONS IN PHOTOIONIZED PLASMAS

    International Nuclear Information System (INIS)

    Wang, Feilu; Salzmann, David; Zhao, Gang; Takabe, Hideaki

    2012-01-01

    The aim of the present paper is to investigate the influence of inner-shell photoionization and photoexcitation on He α and its satellite's spectra in photoionized plasmas. An analysis is carried out on the relative importance of the various atomic processes in photoionized plasmas as a function of the electron temperature and irradiation conditions. In particular, we investigate the influence of K-shell photoionization of Li-like ions on the He α spectrum and of Be-like ions on the He α satellites. It is found that in photoionized plasmas these inner-shell processes contribute significantly under low radiation temperature and/or intensity, when Li- and Be-like ions are highly abundant but highly ionized H-like ions are rare. A short discussion is presented about the parameter space in which the excited 1s2p state has statistical or non-statistical distributions, and how such distributions affect the emission spectrum.

  20. Single capture and transfer ionization in collisions of Clq+ projectile ions incident on helium

    International Nuclear Information System (INIS)

    Wong, K.L.; Ben-Itzhak, I.; Cocke, C.L.; Giese, J.P.; Richard, P.

    1995-01-01

    The Kansas State University linac has been used to measure the ratio of the cross sections for the processes of transfer ionization (TI) and single capture (SC) for 2 MeV/amu Cl q+ where q=7, 9, 13, 14, and 15 projectile ions incident on a helium target. The ratio was determined using a helium gas jet target by measuring coincidences between projectile-ion and recoil-ion final charge states. The σ TI /σ SC for Cl q+ were compared to measurements of bare F 9+ and hydrogenlike F 8+ and O 7+ taken at the same velocity. The ratios deviate from a q 2 scaling which is predicted in the perturbative regime. This deviation is attributed to screening by the projectile electrons for low q=7 and 9, and to the collision being non-perturbative for high q. A possible saturation effect in the ratio was observed for q similar 14. (orig.)

  1. Modification of the hydriding of uranium using ion implantation

    International Nuclear Information System (INIS)

    Musket, R.G.; Robinson-Weis, G.; Patterson, R.G.

    1983-01-01

    The hydriding of depleted uranium at 76 Torr hydrogen and 130 0 C has been significantly reduced by implantation of oxygen ions. The high-dose implanted specimens had incubation times for the initiation of the reaction after exposure to hydrogen that exceeded those of the nonimplanted specimens by more than a factor of eight. Furthermore, the nonimplanted specimens consumed enough hydrogen to cause macroscopic flaking of essentially the entire surface in times much less than the incubation time for the high-dose implanted specimens. In contrast, the ion-implanted specimens reacted only at isolated spots with the major fraction of the surface area unaffected by the hydrogen exposure

  2. Dose measurement of ion implanted silicon by RBS technique

    International Nuclear Information System (INIS)

    Kamawanna, Teerasak; Intarasiri, Saweat; Prapunsri, Chowunchun; Thongleurm, Chome; Maleepatra, Saenee; Singkarat, Somsorn

    2003-10-01

    Surface modification can be achieved by ion implantation. This study used a 1 mm thick silicon wafer as a target which was implanted with Ar+ at 80 keV. The degree of the modification depends on both the ion energy and the implanted dose. The distribution of argon in the silicon substrate and the absolute implanted dose can be measured by using Rutherford Backscattering Spectrometry (RBS). These investigations utilized a 1.7 MV Tandetron accelerator system at Chiang Mai University. The dose determination by a direct calculation is in agreement with the simulation by the SIMNRA code

  3. High-temperature superconductors induced by ion implantation. Final report

    International Nuclear Information System (INIS)

    Greenwald, A.C.; Johnson, E.

    1988-08-01

    High dose oxygen ion implantation (10 to the 17th power ions per sq. cm.) at elevated temperatures (300 C) has been shown to adjust the critical temperature of gamma-Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O materials. These results are in marked contrast to earlier work which showed complete destruction of superconducting properties for similar radiation doses, and marked reduction in superconducting properties at one-tenth this dose in the 1-2-3- compound only. Experiments also showed that the superconducting materials can be patterned into conducting and nonconducting areas without etching by ion implantation, allowing maintenance of planar geometries required for microcircuit fabrication. Experiments on deposition of thin films of high temperature superconductors for use with the ion implantation experiments showed that ion beam sputtering from a single target could achieve the correct stoichiometry. Variations of composition with ion beam energy and angle of sputtered ions were studied

  4. Iron ion implantation into C60 layer

    International Nuclear Information System (INIS)

    Racz, R.; Biri, S.; Csik, A.; Vad, K.

    2011-01-01

    Complete text of publication follows. The soccer ball shaped carbon molecule consisting of 60 carbon atoms (C 60 , fullerene) was discovered in 1985. Since that time the fullerene has become intensively studied. This special molecule has much potential in medical care, biotechnology and nanotechnology. We are motivated to produce special type fullerenes, so called endohedral fullerenes (some alien atoms are encapsulated inside the fullerene cage). The spring of our motivation is that the Fe at C 60 could be applied as a contrast material for MRI (Magnetic Resonance Imaging) or microwave heat therapy. One way to make X at C 60 is the surface production using an ECRIS (Electron Cyclotron Resonance Ion Source). An evaporated or preprepared fullerene layer is irradiated by ions to form a new material during the implantation. By this method several kinds of atomic species, such as Li, Na, K, Rb, Xe were encapsulated into the fullerenes. However evidence for the Fe at C 60 has not been found yet. During the analysis of the irradiated samples three questions must be answered. 1. Are there iron atoms in the layer and where? 2. Does the iron bond to the fullerene? 3. How does the iron bond to the fullerene, inside or outside? Using different investigation tools, SNMS (Secondary Neural Mass Spectrometer), MALDI-TOF (Matrix Assisted Laser Desorption Ionization Time of Flight), XPS (Xray Photoelectron Spectroscopy) or HPLC (High-Performance Liquid Chromatography), all these questions could be clarified step by step. In this paper we made the first steps to answer the first question: fullerene layers irradiated by iron ion beam delivered by the ATOMKI-ECRIS have been analyzed by the ATOMKI-SNMS. The evaporated 90 - 120 nm thick fullerene layers on Si holder were irradiated by Fe 5+ and Fe + ion beams produced from Ferrocene vapor. Samples were irradiated with two different doses (5 10 18 ion/cm 3 and 10 22 ion/cm 3 ) at four ion energies (65 keV, 6.5 keV, 0.2 keV and two of

  5. Cytological effect of nitrogen ion implantation into Stevia

    International Nuclear Information System (INIS)

    Shen Mei; Wang Cailian; Chen Qiufang; Lu Ting; Shu Shizhen

    1997-01-01

    Dry seeds of Stevia were implanted by 35∼150 keV nitrogen ion with various doses. The cytological effect on M 1 was studied. The results showed that nitrogen ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with the increased with the increase of ion beam energy and dose. However, there was no significant linear regression relationship between ion dose and aberration rate. The cytological effect of nitrogen ion implantation was lower than that of γ-rays

  6. Temperature dependent mobility measurements of alkali earth ions in superfluid helium

    Science.gov (United States)

    Putlitz, Gisbert Zu; Baumann, I.; Foerste, M.; Jungmann, K.; Riediger, O.; Tabbert, B.; Wiebe, J.; Zühlke, C.

    1998-05-01

    Mobility measurements of impurity ions in superfluid helium are reported. Alkali earth ions were produced with a laser sputtering technique and were drawn inside the liquid by an electric field. The experiments were carried out in the temperature region from 1.27 up to 1.66 K. The temperature dependence of the mobility of Be^+-ions (measured here for the first time) differs from that of the other alkali earth ions Mg^+, Ca^+, Sr^+ and Ba^+, but behaves similar to that of He^+ (M. Foerste, H. Günther, O. Riediger, J. Wiebe, G. zu Putlitz, Z. Phys. B) 104, 317 (1997). Theories of Atkins (A. Atkins, Phys. Rev.) 116, 1339 (1959) and Cole (M.W. Cole, R.A. Bachmann Phys. Rev. B) 15, 1388 (1977) predict a different defect structure for He^+ and the alkali earth ions: the helium ion is assumed to form a snowball like structure whereas for the alkali earth ions a bubble structure is assumed. If the temperature dependence is a characteristic feature for the different structures, then it seems likely that the Be^+ ion builds a snowball like structure.

  7. Modification of medical metals by ion implantation of copper

    Science.gov (United States)

    Wan, Y. Z.; Xiong, G. Y.; Liang, H.; Raman, S.; He, F.; Huang, Y.

    2007-10-01

    The effect of copper ion implantation on the antibacterial activity, wear performance and corrosion resistance of medical metals including 317 L of stainless steels, pure titanium, and Ti-Al-Nb alloy was studied in this work. The specimens were implanted with copper ions using a MEVVA source ion implanter with ion doses ranging from 0.5 × 10 17 to 4 × 10 17 ions/cm 2 at an energy of 80 keV. The antibacterial effect, wear rate, and inflexion potential were measured as a function of ion dose. The results obtained indicate that copper ion implantation improves the antibacterial effect and wear behaviour for all the three medical materials studied. However, corrosion resistance decreases after ion implantation of copper. Experimental results indicate that the antibacterial property and corrosion resistance should be balanced for medical titanium materials. The marked deteriorated corrosion resistance of 317 L suggests that copper implantation may not be an effective method of improving its antibacterial activity.

  8. Plasma source ion implantation research at southwestern institute of physics

    International Nuclear Information System (INIS)

    Shang Zhenkui; Geng Man; Tong Honghui

    1997-10-01

    The PSII-EX device and PSII-IM device for research and development of plasma source ion implantation (PSII) technology are described briefly. The functions, main technical specifications and properties of the devices are also discussed. After ion implantation by PSII, the improvements of the surface-mechanical properties (such as microhardness, wear-resistance, friction factor, biological compatibility, etc) for some materials, microanalysis and numerical simulation of modified layers of materials, the technical developments for the practical workpiece treatments and the preliminary experiments for plasma source ion implantation-enhanced deposition are introduced too. As last, the future work about PSII have been proposed

  9. Microstructure evolution in carbon-ion implanted sapphire

    International Nuclear Information System (INIS)

    Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

    2010-01-01

    Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

  10. Defects in boron ion implanted silicon

    International Nuclear Information System (INIS)

    Wu, W.K.

    1975-05-01

    The crystal defects formed after post-implantation annealing of B-ion-implanted Si irradiated at 100 keV to a moderate dose (2 x 10 14 /cm 2 ) were studied by transmission electron microscopy. Contrast analysis and annealing kinetics show at least two different kinds of linear rod-like defects along broken bracket 110 broken bracket directions. One kind either shrinks steadily remaining on broken bracket 110 broken bracket at high temperatures (greater than 850 0 C), or transforms into a perfect dislocation loop which rotates toward broken bracket 112 broken bracket perpendicular to its Burgers vector. The other kind shrinks steadily at moderate temperatures (approximately 800 0 C). The activation energy for shrinkage of the latter (3.5 +- 0.1 eV) is the same as that for B diffusion in Si, suggesting that this linear defect is a boron precipitate. There also exist a large number of perfect dislocation loops with Burgers vector a/2broken bracket 110 broken bracket. The depth distribution of all these defects was determined by stereomicroscopy. The B precipitates lying parallel to the foil surfaces are shown to be at a depth of about 3500 +- 600 A. The loops are also at the same depth, but with a broader spread, +-1100 A. Si samples containing B and samples containing no B (P-doped) were irradiated in the 650-kV electron microscope. Irradiation at 620 0 C resulted in the growth of very long linear defects in the B-doped samples but not in the others, suggesting that at 620 0 C Si interstitials produced by the electron beam replace substitutional B some of which precipitates in the form of long rods along broken bracket 110 broken bracket. (DLC)

  11. Reflection properties of hydrogen ions at helium irradiated tungsten surfaces

    International Nuclear Information System (INIS)

    Doi, K; Tawada, Y; Kato, S; Sasao, M; Kenmotsu, T; Wada, M; Lee, H T; Ueda, Y; Tanaka, N; Kisaki, M; Nishiura, M; Matsumoto, Y; Yamaoka, H

    2016-01-01

    Nanostructured W surfaces prepared by He bombardment exhibit characteristic angular distributions of hydrogen ion reflection upon injection of 1 keV H + beam. A magnetic momentum analyzer that can move in the vacuum chamber has measured the angular dependence of the intensity and the energy of reflected ions. Broader angular distributions were observed for He-irradiated tungsten samples compared with that of the intrinsic polycrystalline W. Both intensity and energy of reflected ions decreased in the following order: the polycrystalline W, the He-bubble containing W, and the fuzz W. Classical trajectory Monte Carlo simulations based on Atomic Collision in Amorphous Target code suggests that lower atom density near the surface can make the reflection coefficients lower due to increasing number of collisions. (paper)

  12. Procedure for the ion implantation of MOS elements

    International Nuclear Information System (INIS)

    Gessner, T.; Vetter, E.; Tolonics, J.

    1986-01-01

    The ion implantation procedure is applied to the doping of MOS elements. The invention guarantees a homogeneous doping in the dose range from 10 10 to 10 12 ions/cm 2 without additional installations of mechanical orifices in high-current implantation devices. The ion source parameters like cathode heating current, pressure at the ion source, extraction and acceleration voltages correspond to the dose range (10 10 to 10 12 ions/cm 2 ) for single charged ions of the doping agent. Double or triple charged ions generated at the ion source have been separated mass-analytically, accelerated and scanned. Ion densities below 100 nA/cm 2 have been obtained

  13. Modification of polyvinyl alcohol surface properties by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Pukhova, I.V., E-mail: ivpuhova@mail.ru [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Kurzina, I.A. [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Savkin, K.P. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Laput, O.A. [National Research Tomsk Polytechnic University, 30 Lenin Ave, Tomsk 634050 (Russian Federation); Oks, E.M. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation)

    2017-05-15

    We describe our investigations of the surface physicochemical properties of polyvinyl alcohol modified by silver, argon and carbon ion implantation to doses of 1 × 10{sup 14}, 1 × 10{sup 15} and 1 × 10{sup 16} ion/cm{sup 2} and energies of 20 keV (for C and Ar) and 40 keV (for Ag). Infrared spectroscopy (IRS) indicates that destructive processes accompanied by chemical bond (−C=O) generation are induced by implantation, and X-ray photoelectron spectroscopy (XPS) analysis indicates that the implanted silver is in a metallic Ag3d state without stable chemical bond formation with polymer chains. Ion implantation is found to affect the surface energy: the polar component increases while the dispersion part decreases with increasing implantation dose. Surface roughness is greater after ion implantation and the hydrophobicity increases with increasing dose, for all ion species. We find that ion implantation of Ag, Ar and C leads to a reduction in the polymer microhardness by a factor of five, while the surface electrical resistivity declines modestly.

  14. Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies

    DEFF Research Database (Denmark)

    Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

    1991-01-01

    High-purity single-crystal samples of float-zoned Si have been implanted with 6.95-MeV protons and with 25-MeV 3He2 ions at 15 K, and the positron-lifetime technique has been used to identify the defects created in the samples, and to study the effects of H and He on the annealing of point defects...... in Si. The results have been compared with those of proton-irradiated Si. A 100–300-K annealing stage was clearly observed in hydrogen (H+) -implanted Si, and this stage was almost identical to that in the p-irradiated Si. The final annealing state of the H+-implanted Si started at about 400 K......, and it is connected to annealing out of negatively charged divacancy-oxygen pairs. This stage was clearly longer than that for the p-irradiated Si, probably due to the breakup of Si-H bonds at about 550 K. The 100-K annealing stage was not seen with the He-implanted samples. This has been explained by assuming...

  15. Development of vertical compact ion implanter for gemstones applications

    Science.gov (United States)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

    2014-08-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  16. Development of vertical compact ion implanter for gemstones applications

    International Nuclear Information System (INIS)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L.D.; Singkarat, S.

    2014-01-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented

  17. Development of vertical compact ion implanter for gemstones applications

    Energy Technology Data Exchange (ETDEWEB)

    Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science (Gems and Jewelry), Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D.; Tippawan, U.; Yu, L.D.; Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-08-15

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  18. Low energy implantation of boron with decaborane ions

    Science.gov (United States)

    Albano, Maria Angela

    The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

  19. A study of the effect of helium concentration and displacement damage on the microstructure of helium ion irradiated tungsten

    Science.gov (United States)

    Harrison, R. W.; Greaves, G.; Hinks, J. A.; Donnelly, S. E.

    2017-11-01

    Transmission electron microscopy (TEM) with in-situ He ion irradiation has been used to examine the damage microstructure of W when varying the helium concentration to displacement damage ratio, irradiation temperature and total dose. Irradiations employed 15, 60 or 85 keV He ions, at temperatures between 500 and 1000 °C up to doses of ∼3.0 DPA. Once nucleated and grown to an observable size in the TEM, bubble diameter as a function of irradiation dose did not measurably increase at irradiation temperatures of 500 °C between 1.0 and 3.0 DPA; this is attributed to the low mobility of vacancies and He/vacancy complexes at these temperatures. Bubble diameter increased slightly for irradiation temperatures of 750 °C and rapidly increased when irradiated at 1000 °C. Dislocation loops were observed at irradiation temperatures of 500 and 750 °C and no loops were observed at 1000 °C. Burgers vectors of the dislocations were determined to be b = ±½ type only and both vacancy and interstitial loops were observed. The proportion of interstitial loops increased with He-appm/DPA ratio and this is attributed to the concomitant increase in bubble areal density, which reduces the vacancy flux for both the growth of vacancy-type loops and the annihilation of interstitial clusters.

  20. Final Report on Investigations of the influence of Helium concentration and implantation rate on Cavity Nucleation and Growth during neutron irradiation of Fe and EUROFER 97

    DEFF Research Database (Denmark)

    Eldrup, Morten Mostgaard; Singh, Bachu Narain; Golubov, S.

    This report presents results of investigations of damage accumulation during neutron irradiation of pure iron and EUROFER 97 steel with or without prior helium implantation. The defect microstructure, in particular the cavities, was characterized using Positron Annihilation Spectroscopy (PAS) and...

  1. Investigation of corrosion and ion release from titanium dental implant

    International Nuclear Information System (INIS)

    Ektessabi, A.M.; Mouhyi, J.; Louvette, P.; Sennerby, L.

    1997-01-01

    A thin passive titanium dioxide, in its stoichiometric form, has a very high corrosion resistance, but the same conclusion can not be made on corrosion resistance of a surface which is not stoichiometrically titanium dioxide, or even a surface which is a composition of various elements and oxides. In practice, the implants available on the market have an oxide surface contaminated with other elements. The aim of this paper is to correlate clinical observations that show the deterioration of Ti made implants after certain period of insertion in the patients, and in vitro corrosion resistance of Ti implants with surface passive oxide layer. For this purpose, surface analysis of the retrieved failed implants were performed and in vivo animal experiments with relation to ion release from implants were done. Finally, on the basis of the clinical observation, in vivo animal test, and in vitro electrochemical corrosion test, a model is proposed to explain the corrosion and ion release from the Ti implant. (author)

  2. Wear properties of metal ion implanted 4140 steel

    Energy Technology Data Exchange (ETDEWEB)

    Evans, P.J. (Applications of Nuclear Physics, Ansto, Private Mail Bag 1, Menai, NSW 2234 (Australia)); Paoloni, F.J. (Department of Electrical and Computer Engineering, University of Wollongong, GPO Box 1144, Wollongong, NSW 2500 (Australia))

    1994-07-01

    AISI type 4140 (high tensile) steel has been implanted with tungsten and titanium using a metal vapour vacuum arc ion source. Doses in the range (1-5)x10[sup 16]ionscm[sup -2] were implanted to a depth of approximately 30nm. The relative wear resistance between non-implanted and implanted specimens has been estimated using pin-on-disc and abrasive wear tests. Implantation of titanium decreased the area of wear tracks by a factor of 5 over unimplanted steel. In some cases the steel was also hardened by a liquid carburization treatment before implantation. Abrasion tests revealed a further improvement in wear resistance on this material following ion irradiation. ((orig.))

  3. Modelling of ion implantation in SiC crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chakarov, Ivan [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)]. E-mail: ivan.chakarov@silvaco.com; Temkin, Misha [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)

    2006-01-15

    An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator.

  4. Modelling of ion implantation in SiC crystals

    International Nuclear Information System (INIS)

    Chakarov, Ivan; Temkin, Misha

    2006-01-01

    An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator

  5. Ion implantation induced nanotopography on titanium and bone cell adhesion

    Energy Technology Data Exchange (ETDEWEB)

    Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Vera, Carolina; Ayerdi-Izquierdo, Ana [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Muñoz, Roberto [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Lorenzo, Jaione; Alvarez, Noelia [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Maeztu, Miguel Ángel de [Private Practice, P° San Francisco, 43 A-1°, 20400 Tolosa (Spain)

    2014-08-15

    Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm{sup 2}) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

  6. Ion implantation induced nanotopography on titanium and bone cell adhesion

    International Nuclear Information System (INIS)

    Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; Maeztu, Miguel Ángel de

    2014-01-01

    Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm 2 ) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

  7. Towards polarization measurements of laser-accelerated helium-3 ions

    Energy Technology Data Exchange (ETDEWEB)

    Engin, Ilhan

    2015-08-28

    In the framework of this thesis, preparatory investigations for the spin-polarization measurement of {sup 3}He ions from laser-induced plasmas have been performed. Therefore, experiments aiming at an efficient laser-induced ion acceleration out of a {sup 4}He gas target were carried out at two high-intensity laser facilities: the Arcturus laser at Heinrich-Heine-Universitaet Duesseldorf as well as PHELIX at GSI Darmstadt. The scientific goal of both experiments was to investigate the ion-acceleration process in underdense plasmas by measuring the ion energy spectra and the angular distribution of the ion signal around the gas-jet target. Laser-accelerated MeV-He-ions could successfully be detected. The main acceleration direction at large angles with regard to the laser propagation direction was determined. In a second step, unpolarized {sup 3}He gas was attached in order to cross-check the experimental results with those of {sup 4}He. With the help of the achieved ion yield data, the expected rates of the fusion reaction D({sup 3}He,p){sup 4}He in the polarized case have been estimated: the information regarding the fusion proton yield from this nuclear reaction allows an experimentally based estimation for future experiments with pre-polarized {sup 3}He gas as plasma target. The experimental data is in line with supporting Particle-in-Cell (PIC) simulations performed on the Juelich supercomputers. For this purpose, the simulated target was defined as a neutral gas. The use of pre-polarized {sup 3}He gas demands a special preparation of a polarized {sup 3}He target for laser-acceleration experiments. This layout includes an (external) homogeneous magnetic holding field (field strength of ∝1.4 mT) for storing the pre-polarized gas for long time durations inside the PHELIX target chamber. For this purpose, a precise Halbach array consisting of horizontally arranged rings with built-in permanent magnets had to be designed, optimized, and constructed to deliver high

  8. Structural and electronic properties of ion-implanted superconductors

    International Nuclear Information System (INIS)

    Bernas, H.; Nedellec, P.

    1980-01-01

    Recent work on ion implanted superconductors is reviewed. In situ x-ray, channeling, resistivity, and electron tunneling experiments now approach the relation between lattice order (or disorder) and superconductivity

  9. Industrial applications of ion implantation into metal surfaces

    International Nuclear Information System (INIS)

    Williams, J.M.

    1987-07-01

    The modern materials processing technique, ion implantation, has intriguing and attractive features that stimulate the imaginations of scientists and technologists. Success of the technique for introducing dopants into semiconductors has resulted in a stable and growing infrastructure of capital equipment and skills for use of the technique in the economy. Attention has turned to possible use of ion implantation for modification of nearly all surface related properties of materials - optical, chemical and corrosive, tribological, and several others. This presentation provides an introduction to fundamental aspects of equipment, technique, and materials science of ion implantation. Practical and economic factors pertaining to the technology are discussed. Applications and potential applications are surveyed. There are already available a number of ion-implanted products, including ball-and-roller bearings and races, punches-and-dies, injection screws for plastics molding, etc., of potential interest to the machine tool industry

  10. Improving Sustainability of Ion Implant Modules

    Science.gov (United States)

    Mayer, Jim

    2011-01-01

    Semiconductor fabs have long been pressured to manage capital costs, reduce energy consumption and increasingly improve efforts to recycle and recover resources. Ion implant tools have been high-profile offenders on all three fronts. They draw such large volumes of air for heat dissipation and risk reduction that historically, they are the largest consumer of cleanroom air of any process tool—and develop energy usage and resource profiles to match. This paper presents a documented approach to reduce their energy consumption and dramatically downsize on-site facilities support for cleanroom air manufacture and abatement. The combination produces significant capital expenditure savings. The case entails applying SAGS Type 1 (sub-atmospheric gas systems) toxic gas packaging to enable engineering adaptations that deliver the energy savings and cost benefits without any reduction in environmental health and safety. The paper also summarizes benefits as they relate to reducing a fabs carbon emission footprint (and longer range advantages relative to potential cap and trade programs) with existing technology.

  11. A simple ion implantation system for solar cells

    International Nuclear Information System (INIS)

    Kenny, M.J.; Bird, J.R.; Broe, H.G.

    1982-11-01

    A project has been initiated to investigate simple but effective ion implantation and pulsed annealing techniques for the fabrication of high efficiency silicon solar cells. In particular, the method aims to eliminate the mass analyser and associated components from the implanter. A solid feed source is used in a clean ultra high vacuum environment to minimise impurities

  12. Plasma immersion ion implantation: duplex layers from a single process

    International Nuclear Information System (INIS)

    Hutchings, R.; Collins, G.A.; Tendys, J.

    1992-01-01

    Plasma immersion ion implantation (PI 3 ) is an alternative non-line-of-sight technique for implanting ions directly from a plasma which surrounds the component to be treated. In contrast to plasma source ion implantation, the PI 3 system uses an inductively coupled r.f. plasma. It is shown that nitrogen can be retained during implantation at elevated temperatures, even for unalloyed steels. This allows controlled diffusion of nitrogen to greater depths, thereby improving the load bearing capacity of the implanted layer. Components can be heated directly, using the energy deposited by the incident ions during the pulsed implantation. The necessary temperature control can be accomplished simply by regulating the frequency and length of the high voltage pulses applied to the component. Chemical depth profiles and microstructural data obtained from H13 tool steel are used to show that PI 3 can, in a single process, effectively produce a duplex subsurface structure. This structure consists of an outer non-equilibrium layer typical of nitrogen implantation (containing in excess of 20 at.% nitrogen) backed by a substantial diffusion zone of much lower nitrogen content. The relationship between implantation temperature and the resultant subsurface microstructure is explored. (orig.)

  13. SIMPLANT: analytic calculation of ion implantation within the Tadpance system

    International Nuclear Information System (INIS)

    Fawcett, R.J.

    1988-04-01

    An analytic method for calculating the concentration distribution of dopant atoms introduced into a multilayer semiconductor device by ion beam implantation is explained. Computer software written to apply the method is described. The operation of the software within a semiconductor process and device modelling package is outlined. Implantation distributions generated by the software are illustrated. (author)

  14. Study on surface modification of M2 steel induced by Cu ions and Al ions implantation

    International Nuclear Information System (INIS)

    Wang Chao; Liu Zhengmin

    2001-01-01

    Changes of surface hardness and wear resistances in M2 type steel implanted by Cu Al ions were reported. The dependence of surface strengthening on ion species and dose was studied by X-ray diffraction (XRD) and Rutherford Backscattering Spectroscopy (RBS) for microhardness and wear resistances measurement. It is shown that both hardness and wear resistance increases apparently after ion implantation. XRD analysis indicates that different phases formed after Al Cu ions implanted. It is also suggested that Cu, Al ions have different role in surface strengthening

  15. Projectile electron loss in collisions of light charged ions with helium

    International Nuclear Information System (INIS)

    Yin Yong-Zhi; Chen Xi-Meng; Wang Yun

    2014-01-01

    We investigate the single-electron loss processes of light charged ions (Li 1+,2+ , C 2+,3+,5+ , and O 2+,3+ ) in collisions with helium. To better understand the experimental results, we propose a theoretical model to calculate the cross section of projectile electron loss. In this model, an ionization radius of the incident ion was defined under the classical over-barrier model, and we developed ''strings'' to explain the processes of projectile electron loss, which is similar with the molecular over-barrier model. Theoretical calculations are in good agreement with the experimental results for the cross section of single-electron loss and the ratio of double-to-single ionization of helium associated with one-electron loss. (atomic and molecular physics)

  16. Effect of helium on void formation in nickel

    International Nuclear Information System (INIS)

    Brimhall, J.L.; Simonen, E.P.

    1977-01-01

    This study examines the influence of helium on void formation in self-ion irradiated nickel. Helium was injected either simultaneously with, or prior to, the self-ion bombardment. The void microstructure was characterized as a function of helium deposition rate and the total heavy-ion dose. In particular, at 575 0 C and 5 X 10 -3 displacements per atom per second the void density is found to be proportional to the helium deposition rate. The dose dependence of swelling is initially dominated by helium driven nucleation. The void density rapidly saturates after which swelling continues with increasing dose only from void growth. It is concluded that helium promotes void nucleation in nickel with either helium implantation technique, pre-injection or simultaneous injection. Qualitative differences, however, are recognized. (Auth.)

  17. Plasma Immersion Ion Implantation in Radio Frequency Plasma

    International Nuclear Information System (INIS)

    Bora, B.; Bhuyan, H.; Wyndham, E.

    2013-01-01

    Plasma immersion ion implantation (PIII) has attracted wide interests since it emulates conventional ion-beam ion implantation (IBII) in niche applications. For instance, the technique has very high throughput, the implantation time is independent of the sample size, and samples with an irregular shape can be implanted without complex beam scanning or sample manipulation. For uniform ion implantation and deposition on to different substrates, like silicon, stainless steel etc., a capacitive coupled Radio frequency (RF), 13.6 MHz, plasma is used. During the PIII process, the physical parameters which are expected to play crucial rule in the deposition process like RF power, Negative pulse voltage and pulse duration, gas type and gas mixture, gas flow rates and the implantation dose are studied. The ion dose is calculated by dynamic sheath model and the plasma parameters are calculated from the V-I characteristic and power balance equation by homogeneous model of rf plasma discharge considering Ohmic as well as Stochastic heating. The correlations between the yield of the implantation process and the physical parameters as well as plasma parameters are discussed. (author)

  18. Modification of polyethyleneterephtalate by implantation of nitrogen ions

    International Nuclear Information System (INIS)

    Svorcik, V.; Endrst, R.; Rybka, V.; Hnatowicz, V.; Cerny, F.

    1994-01-01

    The implantation of 90 keV N + ions into polyethyleneterephtalate (PET) to fluences of 1 x 10 14 --1 x 10 17 cm -2 was studied. The changes in electrical sheet conductivity and polarity of ion-exposed PET were observed and the structural changes were examined using IR spectroscopy. One degradation process is a chain fission according to the Norrish II reaction. The sheet conductivity due to conjugated double bonds was increased by ten orders of magnitude as a result of ion implantation. The surface polarity of the PET samples increases slightly with increasing ion fluence

  19. Effect of ion implantation on apple wine yeast

    International Nuclear Information System (INIS)

    Song Andong; Chen Hongge; Zhang Shimin; Jia Cuiying

    2004-01-01

    The wild type apple wine yeast Y 02 was treated by ion implantation with the dose of 8 x 10 15 ion/cm 2 . As results, a special mutant strain, ION II -11 dry, was obtained. The morphology characters, partial biochemistry characters, mycelium protein of the mutant strain were distinctively changed compared with original strain Y 02 . After the fermentation test ,the apple wine producing rate of the mutant strain increased 22.4% compared with original strain. These results showed that ion implantation was an effective method for mutagenesis

  20. Ion implantation in superconducting niobium and Nb3 Sn thin films: adjustment of Josephson microbridges and SQUID devices

    International Nuclear Information System (INIS)

    Robic, J.Y.; Piaguet, J.; Duret, D.; Veler, J.C.; Veran, J.L.; Zenatti, D.

    1978-01-01

    The principles of operation of Josephson junctions and SQUIDS are resumed. An ion implantation technique for the adjustment of the critical current is presented. High quality superconducting thin films were obtained by electron gun evaporation of niobium on heated substrates. Polycrystalline Nb 3 Sn was made by annealing (1000 K, 10 -6 Torr) a multilayer structure of successively evaporated niobium and thin films. Selected ions (helium, neon, argon) were implanted at doses ranging from 10 13 to 10 17 cm -2 . After implantation the critical temperature, the critical current and the normal resistivity were measured on special photoetched geometries. The variations of these electrical properties depend on the nuclear energy loss. The critical temperature of Nb 3 Sn is decreased by ion implantation and can be increased again by a new annealing. The parameters of the ion implantation were defined in order to obtain a critical temperature slightly higher than the operating temperature. The geometries of the microbridges and the implanted areas where then chosen to obtain appropriate criticals currents (approximately 10 μA) at the operating temperature. The obtained microbridges were used as junction elements in superconducting quantum interference devices (SQUID)

  1. Nanocomposites formed by ion implantation: Recent developments and future opportunities

    International Nuclear Information System (INIS)

    Meldrum, A.; Boatner, L.A.; White, C.W.

    2001-01-01

    Ion implantation is a versatile and powerful technique for forming many types of nanocrystalline precipitates embedded in the near-surface region of a wide variety of crystalline and amorphous host materials. The unique optical, electronic and magnetic properties of these nanocomposites has stimulated considerable recent research interest. In this review, we discuss recent developments in the field as well as some of the problems that currently hinder the potential applications of nanocomposites formed by ion implantation

  2. Stereotactic helium-ion radiosurgery for the treatment of intracranial arteriovenous malformations

    International Nuclear Information System (INIS)

    Fabrikant, J.I.; Levy, R.P.; Frankel, K.A.; Phillips, M.H.; Lyman, J.T.; Chuang, F.Y.S.; Steinberg, G.K.; Marks, M.P.

    1989-12-01

    One of the more challenging problems of vascular neurosurgery is the management of surgically-inaccessible arteriovenous malformations (AVMs) of the brain. At Lawrence Berkeley Laboratory, we have developed the method of stereotactic heavy-charged-particle (helium-ion) Bragg peak radiosurgery for treatment of inoperable intracranial AVMs in over 300 patients since 1980 [Fabrikant et al. 1989, Fabrikant et al. 1985, Levy et al. 1989]. This report describes patient selection, treatment method, clinical and neuroradiologic results and complications encountered. 4 refs

  3. Parametric analysis of the soft electron emission in ion-helium collisions

    Energy Technology Data Exchange (ETDEWEB)

    Cravero, W.R. (Centro Atomico Bariloche and CONICET, S.C. de Bariloche (Argentina)); Garibotti, C.R. (Centro Atomico Bariloche and CONICET, S.C. de Bariloche (Argentina)); Gasaneo, G. (Centro Atomico Bariloche and CONICET, S.C. de Bariloche (Argentina))

    1994-03-01

    We studied the doubly differential cross section (DDCS) for ion-helium ionization, in the region of near zero emission velocity. We expanded the DDCS in powers of the electron emission velocity, with angle-dependent weight coefficients, which are determined from available experimental data and calculated using the CDW-EIS theory. We also compared this expansion with a previously used Legendre polynomials expansion of the DDCS. (orig.)

  4. In-situ observation of damage evolution in TiC crystals during helium ion irradiation

    International Nuclear Information System (INIS)

    Hojou, K.; Otsu, H.; Furuno, S.; Izui, K.; Tsukamoto, T.

    1994-01-01

    In-situ observations were performed on bubble formation and growth in TiC during 20 keV helium ion irradiation over the wide range of irradiation temperatures from 12 to 1523 K. No amorphization occurred over this temperature range. The bubble densities and sizes were almost independent of irradiation temperatures from 12 to 1273 K. Remarkable growth and coalescence occurred during irradiation at high temperature above 1423 K and during annealing above 1373 K after irradiation. ((orig.))

  5. A MEASUREMENT OF THE ADIABATIC COOLING INDEX FOR INTERSTELLAR HELIUM PICKUP IONS IN THE INNER HELIOSPHERE

    International Nuclear Information System (INIS)

    Saul, Lukas; Wurz, Peter; Kallenbach, Reinald

    2009-01-01

    Interstellar neutral gas enters the inner heliosphere where it is ionized and becomes the pickup ion population of the solar wind. It is often assumed that this population will subsequently cool adiabatically, like an expanding ideal gas due, to the divergent flow of the solar wind. Here, we report the first independent measure of the effective adiabatic cooling index in the inner heliosphere from SOHO CELIAS measurements of singly charged helium taken during times of perpendicular interplanetary magnetic field. We use a simple adiabatic transport model of interstellar pickup helium ions, valid for the upwind region of the inner heliosphere. The time averaged velocity spectrum of helium pickup ions measured by CELIAS/CTOF is fit to this model with a single free parameter which indicates an effective cooling rate with a power-law index of γ = 1.35 ± 0.2. While this average is consistent with the 'ideal-gas' assumption of γ = 1.5, the analysis indicates that such an assumption will not apply in general, and that due to observational constraints further measurements are necessary to constrain the cooling process. Implications are discussed for understanding the transport processes in the inner heliosphere and improving this measurement technique.

  6. Prospects of ion implantation and ion beam mixing for corrosion protection

    International Nuclear Information System (INIS)

    Wolf, G.K.; Munn, P.; Ensinger, W.

    1985-01-01

    Ion implantation is very useful new low temperature treatment for improving the mechanical surface properties of materials without any dimensional changes. In addition also the corrosion properties of metals can be modified considerably by this technique. The long term corrosion behaviour of implanted metals, however, has been studied only for a very limited number of cases. In this contribution a survey of attempts to do this will be presented. As examples of promising systems for corrosion protection by ion beams iron, steel and titanium were examined with and without pretreatment by ion implantation and ion beam mixing. The corrosion rates of the systems have been obtained by neutron activation analysis and by electrochemical methods. Experimental results are presented on: Palladium implanted in titanium - crevice corrosion in salt solution; Palladium implanted in and deposited on titanium -corrosion in sulfuric acid; Platinum implanted in stainless steel -corrosion in sulfuric acid. (author)

  7. High fluence effects on ion implantation stopping and range

    International Nuclear Information System (INIS)

    Selvi, S.; Tek, Z.; Oeztarhan, A.; Akbas, N.; Brown, I.G.

    2005-01-01

    We have developed a code STOPPO which can be used to modify the more-widely used ion implantation codes to more accurately predict the mean nuclear and electronic stopping power, preferential sputtering and range of heavy ions in monatomic target materials. In our simulations an effective atomic number and effective atomic mass are introduced into conveniently available analytical stopping cross-sections and a better fitting function for preferential sputtering yield is carefully evaluated for each ion implantation. The accuracy of the code confirmed experimentally by comparison with measured Rutherford backscattering spectrometry (RBS) concentration profiles for 130 keV Zr ions implanted into Be to fluences of 1 x 10 17 , 2 x 10 17 and 4 x 10 17 ions/cm 2 . We find a steady increase in the mean nuclear and electronic stopping powers of the target; the increase in nuclear stopping power is much greater than the increase in electronic stopping power

  8. Enhanced Physicochemical and Biological Properties of Ion-Implanted Titanium Using Electron Cyclotron Resonance Ion Sources

    Directory of Open Access Journals (Sweden)

    Csaba Hegedűs

    2016-01-01

    Full Text Available The surface properties of metallic implants play an important role in their clinical success. Improving upon the inherent shortcomings of Ti implants, such as poor bioactivity, is imperative for achieving clinical use. In this study, we have developed a Ti implant modified with Ca or dual Ca + Si ions on the surface using an electron cyclotron resonance ion source (ECRIS. The physicochemical and biological properties of ion-implanted Ti surfaces were analyzed using various analytical techniques, such as surface analyses, potentiodynamic polarization and cell culture. Experimental results indicated that a rough morphology was observed on the Ti substrate surface modified by ECRIS plasma ions. The in vitro electrochemical measurement results also indicated that the Ca + Si ion-implanted surface had a more beneficial and desired behavior than the pristine Ti substrate. Compared to the pristine Ti substrate, all ion-implanted samples had a lower hemolysis ratio. MG63 cells cultured on the high Ca and dual Ca + Si ion-implanted surfaces revealed significantly greater cell viability in comparison to the pristine Ti substrate. In conclusion, surface modification by electron cyclotron resonance Ca and Si ion sources could be an effective method for Ti implants.

  9. Development of industrial ion implantation and ion assisted coating processes: A perspective

    International Nuclear Information System (INIS)

    Legg, K.O.; Solnick-Legg, H.

    1989-01-01

    Ion beam processes have gone through a series of developmental stages, from being the mainstay of the semiconductor industry for production of integrated circuits, to new commercial processes for biomedical, aerospace and other industries. Although research is still continuing on surface modification using ion beam methods, ion implantation and ion assisted coatings for treatment of metals, ceramics, polymers and composites must now be considered viable industrial processes of benefit in a wide variety of applications. However, ion implantation methods face various barriers to acceptability, in terms not only of other surface treatment processes, but for implantation itself. This paper will discuss some of the challenges faced by a small company whose primary business is development and marketing of ion implantation and ion-assisted coating processes. (orig.)

  10. Nitrogen ion implantation effect on friction coefficient of tool steel

    International Nuclear Information System (INIS)

    Velichko, N.I.; Udovenko, V.F.; Markus, A.M.; Presnyakova, G.N.; Gamulya, G.D.

    1988-01-01

    Effect of nitrogen molecular ion implantation into KhVSG steel on the friction coefficient in the air and vacuum is investigated. Irradiation is carried out by the N 2 + beam with energy 120 keV and flux density 5 μ/cm 2 at room temperature in vacuum 5x10 -4 Pa. The integral dose of irradiation is 10 17 particle/cm 2 . Nitrogen ion implantation is shown to provide the formation of the modified layer changing friction properties of steel. The friction coefficient can either increase or decrease depending on implantation and test conditions. 4 refs.; 2 figs

  11. Ion implantation induced conducting nano-cluster formation in PPO

    International Nuclear Information System (INIS)

    Das, A.; Patnaik, A.; Ghosh, G.; Dhara, S.

    1997-01-01

    Conversion of polymers and non-polymeric organic molecules from insulating to semiconducting materials as an effect of energetic ion implantation is an established fact. Formation of nano-clusters enriched with carbonaceous materials are made responsible for the insulator-semiconductor transition. Conduction in these implanted materials is observed to follow variable range hopping (VRH) mechanism. Poly(2,6-dimethyl phenylene oxide) [PPO] compatible in various proportion with polystyrene is used as a high thermal resistant insulating polymer. PPO has been used for the first time in the ion implantation study

  12. Characterization of ion implanted silicon by the electrolytic reverse current

    International Nuclear Information System (INIS)

    Hueller, J.; Pham, M.T.

    1977-01-01

    The current voltage behaviour of ion implanted silicon electrodes in HF electrolyte is investigated. The electrolytic reverse current, i.e. the reaction rate of the minority carrier limited reactions is found to increase. The current increase depends on the implanted dose and layer stripping. Reason for the increased reverse current can be referred to radiation damage acting as generation centres for minority carriers. Measurement of the electrolytic reverse current can be used for determining damage profiles. Layer stripping is carried out by anodic dissolution in the same electrolyte. The sensitivity of this new method for characterizing ion implanted silicon layers lies at 10 11 to 10 12 atoms/cm 2 . (author)

  13. Thermal stress resistance of ion implanted sapphire crystals

    International Nuclear Information System (INIS)

    Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

    1999-01-01

    Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

  14. The emittance and brightness characteristics of negative ion sources suitable for MeV ion implantation

    International Nuclear Information System (INIS)

    Alton, G.D.

    1987-01-01

    This paper provides the description and beam properties of ion sources suitable for use with ion implantation devices. Particular emphasis is placed on the emittance and brightness properties of state-of-the-art, high intensity, negative ion sources based on the cesium ion sputter principle

  15. Characterization of diamond amorphized by ion implantation

    International Nuclear Information System (INIS)

    Allen, W.R.; Lee, E.H.

    1992-01-01

    Single crystal diamond has been implanted at 1 MeV with 2 x 10 20 Ar/m 2 . Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation

  16. Helium trapping in aluminum and sintered aluminum powders

    International Nuclear Information System (INIS)

    Das, S.K.; Kaminsky, M.; Rossing, T.

    1975-01-01

    The surface erosion of annealed aluminum and of sintered aluminum powder (SAP) due to blistering from implantation of 100-keV 4 He + ions at room temperature has been investigated. A substantial reduction in the blistering erosion rate in SAP was observed from that in pure annealed aluminum. In order to determine whether the observed reduction in blistering is due to enhanced helium trapping or due to helium released, the implanted helium profiles in annealed aluminum and in SAP have been studied by Rutherford backscattering. The results show that more helium is trapped in SAP than in aluminum for identical irradiation conditions. The observed reduction in erosion from helium blistering in SAP is more likely due to the dispersion of trapped helium at the large Al-Al 2 O 3 interfaces and at the large grain boundaries in SAP than to helium release

  17. Dual-ion implantation into GaAs

    International Nuclear Information System (INIS)

    Sealy, B.J.; Bell, E.C.; Surridge, R.K.; Stephens, K.G.; Ambridge, T.; Heckingbottom, R.

    1976-01-01

    A variety of dual implants have been carried out to test the theory of Ambridge and Heckingbottom (Ambridge, T. and Heckingbottom, R., 1973, Radiat. Effects, vol. 17, 31). After annealing at 700 0 C or 750 0 C a significant enhancement of electrical activity compared with single-ion implants has been obtained for (Ga + Se) and (Sn + Se) implants but the degree of enhancement is dose dependent. The results imply that the dual implantation process is more complex than predicted by the theory and the electrical activity measured seems to be dominated by residual, compensating damage. (author)

  18. Characterisation of Cs ion implanted GaN by DLTS

    Science.gov (United States)

    Ngoepe, P. N. M.; Meyer, W. E.; Auret, F. D.; Omotoso, E.; Hlatshwayo, T. T.; Diale, M.

    2018-04-01

    Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360 keV to a fluence of 10-11 cm-2. A defect with activation energy of 0.19 eV below the conduction band and an apparent capture cross section of 1.1 × 10-15 cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.

  19. A collisional model for plasma immersion ion implantation

    International Nuclear Information System (INIS)

    Vahedi, V.; Lieberman, M.A.; Alves, M.V.; Verboncoeur, J.P.; Birdsall, C.K.

    1990-01-01

    In plasma immersion ion implantation, a target is immersed in a plasma and a series of negative short pulses are applied to it to implant the ions. A new analytical model is being developed for the high pressure regimes in which the motion of the ions is highly collisional. The model provides values for ion flux, average ion velocity at the target, and sheath edge motion as a function of time. These values are being compared with those obtained from simulation and show good agreement. A review is also given (for comparison) of the earlier work done at low pressures, where the motion of ions in the sheath is collisionless, also showing good agreement between analysis and simulation. The simulation code is PDP1 which utilizes particle-in-cell techniques plus Monte-Carlo simulation of electron-neutral (elastic, excitation and ionization) and ion-neutral (scattering and charge-exchange) collisions

  20. Corrosion behaviour of pure iron implanted with Pd ion beam

    International Nuclear Information System (INIS)

    Sang, J.M.; Lin, W.L.; Wu, Z.D.; Wang, H.S.

    1999-01-01

    The corrosion behavior of pure iron implanted with Pd ions up to doses in the range 1x10 16 -1x10 18 ions/cm 2 at an extracting voltage 45kV by using MEVVA source ion implanter has been investigated. The concentration profiles and valence states of elements at the near surface of Pd implanted iron specimens were analyzed by AES and XPS respectively. The Anodic dissolution process of Pd implanted pure iron was measured by means of potentiokinetic sweep in a 0.5 mol/1 NaAc/Hac buffer solution with pH5.0. The open circuit corrosion potential as a function of immersion time was used to evaluate the corrosion resistance of Pd implanted iron specimens. The experimental results show that Pd ion implantation decreases the critical passive current of iron and maintains a better passivity in acetate buffer solution with pH5.0. It is interesting that the active corrosion rate of Pd implanted iron is even higher than that of unimplanted one, when the oxide layer on the surface of iron has been damaged. (author)

  1. Chemical characterization of 4140 steel implanted by nitrogen ions

    International Nuclear Information System (INIS)

    Niño, E D V; Dugar-Zhabon, V; Pinto, J L; Henao, J A

    2012-01-01

    AISI SAE 4140 steel samples of different surface roughness which are implanted with 20 keV and 30 keV nitrogen ions at a dose of 10 17 ions/cm 2 are studied. The crystal phases of nitrogen compositions of the implanted samples, obtained with help of an x-ray diffraction method, are confronted with the data reported by the International Centre for Diffraction Data (ICDD) PDF-2. The implantation treatment is realized in high-voltage pulsed discharges at low pressures. The crystal structure of the implanted solid surfaces is analyzed by the x-ray diffraction technique which permits to identify the possible newly formed compounds and to identify any change in the surface structure of the treated samples. A decrease in the intensity of the plane (110), a reduction of the cell unity in values of 2-theta and a diminishing of the crystallite dimensions in comparison with non-implanted samples are observed.

  2. Chemical characterization of 4140 steel implanted by nitrogen ions

    Science.gov (United States)

    Niño, E. D. V.; Pinto, J. L.; Dugar-Zhabon, V.; Henao, J. A.

    2012-06-01

    AISI SAE 4140 steel samples of different surface roughness which are implanted with 20 keV and 30 keV nitrogen ions at a dose of 1017 ions/cm2 are studied. The crystal phases of nitrogen compositions of the implanted samples, obtained with help of an x-ray diffraction method, are confronted with the data reported by the International Centre for Diffraction Data (ICDD) PDF-2. The implantation treatment is realized in high-voltage pulsed discharges at low pressures. The crystal structure of the implanted solid surfaces is analyzed by the x-ray diffraction technique which permits to identify the possible newly formed compounds and to identify any change in the surface structure of the treated samples. A decrease in the intensity of the plane (110), a reduction of the cell unity in values of 2-theta and a diminishing of the crystallite dimensions in comparison with non-implanted samples are observed.

  3. Lithium ion implantation effects in MgO(100)

    International Nuclear Information System (INIS)

    Huis, M.A. van; Fedorov, A.V.; Veen, A. van; Labohm, F.; Schut, H.; Mijnarends, P.E.; Kooi, B.J.; Hosson, J.T.M. de

    2001-01-01

    Single crystals of MgO(100) were implanted with 10 16 6 Li ions cm -2 at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical absorption spectroscopy and depth-sensitive Doppler Broadening positron beam analysis (PBA). A strong increase in the S-parameter is observed in the implantation layer at a depth of approximately 100 nm. The high value of the S-parameter is ascribed to positron annihilation in small lithium precipitates. The results of 2D-ACAR and X-TEM analysis show evidence of the presence of lithium precipitates. The depth distribution of the implanted 6 Li atoms was monitored with neutron depth profiling (NDP). It was observed that detrapping and diffusion of 6 Li starts at an annealing temperature of 1200K. (orig.)

  4. Behavior of PET implanted by Ti, Ag, Si and C ion using MEVVA implantation

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Yanwen; Zhang Huixing; Zhang Xiaoji; Zhou Gu

    2001-01-01

    Polyethylene terephthalane (PET) has been modified with Ti, Ag, Si and C ions from a metal vapor arc source (MEVVA). Ti, Ag, Si and C ions were implanted with acceleration voltage 40 kV to fluences ranging from 1x10 16 to 2x10 17 cm -2 . The surface of implanted PET darkened with increasing ion dose, when the metal ion dose was greater than 1x10 17 cm -2 the color changed to metallic bright. The surface resistance decreases by 5-6 orders of magnitude with increasing dose. The resistivity is stable after long-term storage. The depth of Ti- and Ag-implanted layer is approximately 150 and 80 nm measured by Rutherford backscattering (RBS), respectively. TEM photos revealed the presence of Ti and Ag nano-meter particles on the surface resulting from the high-dose implantation. Ti and Ag ion implantations improved conductivity and wear resistance significantly. The phase and structural changes were obtained by X-ray diffraction (XRD). It can be seen that nano-meter particles of Ti precipitation, TiO 2 and Ti-carbides have been formed in implanted layer. Nano-hardness of implanted PET has been measured by a nano-indenter. The results show that the surface hardness, modulus and wear resistance could be increased

  5. Carbon dioxide ion implantation in Titanium Nitride (Ti N)

    International Nuclear Information System (INIS)

    Torabi, Sh.; Sari, A. H.; Hojabri, A.; Ghoranneviss, M.

    2007-01-01

    Nitrogen ion implantation on titanium samples performed at 3x10 18 , 8x10 17 , 3x10 18 doses. In addition CO 2 ions were also implanted at doses in the range of 1x10 17 ,4 x10 17 ,8x10 17 . Atomic Force Microscopy, used to investigate the topographical changes of implanted samples. The structure of samples and phase composition were characterized using x-ray diffraction. The results show that by increasing of nitrogen ions, the roughness, grain sizes and hardness will increase. But by further increasing of dose, hardness will be decreased. The CO 2 implantation also enhance the roughness, grain size and hardness which could be caused by phase composition.

  6. Silicon carbide layer structure recovery after ion implantation

    International Nuclear Information System (INIS)

    Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

    1984-01-01

    The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

  7. Surface sputtering in high-dose Fe ion implanted Si

    International Nuclear Information System (INIS)

    Ishimaru, Manabu

    2007-01-01

    Microstructures and elemental distributions in high-dose Fe ion implanted Si were characterized by means of transmission electron microscopy and Rutherford backscattering spectroscopy. Single crystalline Si(0 0 1) substrates were implanted at 350 deg. C with 120 keV Fe ions to fluences ranging from 0.1 x 10 17 to 4.0 x 10 17 /cm 2 . Extensive damage induced by ion implantation was observed inside the substrate below 1.0 x 10 17 /cm 2 , while a continuous iron silicide layer was formed at 4.0 x 10 17 /cm 2 . It was found that the spatial distribution of Fe projectiles drastically changes at the fluence between 1.0 x 10 17 and 4.0 x 10 17 /cm 2 due to surface sputtering during implantation

  8. Fe doped Magnetic Nanodiamonds made by Ion Implantation.

    Science.gov (United States)

    Chen, ChienHsu; Cho, I C; Jian, Hui-Shan; Niu, H

    2017-02-09

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

  9. Fe doped Magnetic Nanodiamonds made by Ion Implantation

    Science.gov (United States)

    Chen, Chienhsu; Cho, I. C.; Jian, Hui-Shan; Niu, H.

    2017-02-01

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

  10. Statistical 3D damage accumulation model for ion implant simulators

    CERN Document Server

    Hernandez-Mangas, J M; Enriquez, L E; Bailon, L; Barbolla, J; Jaraiz, M

    2003-01-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided.

  11. Statistical 3D damage accumulation model for ion implant simulators

    International Nuclear Information System (INIS)

    Hernandez-Mangas, J.M.; Lazaro, J.; Enriquez, L.; Bailon, L.; Barbolla, J.; Jaraiz, M.

    2003-01-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided

  12. The KFKI 150 kV ion-implanter

    International Nuclear Information System (INIS)

    Pasztor, E.

    1976-09-01

    The description of the ion-implanter of 150 keV maximum energy designed and built in the Central Research Institute for Physics, Budapest is given. The implanter fulfils all technological and safety requirements of the industry. In addition to B,P and As other elements up to mass-number 76 can also be implanted by help of the Danfysik 911 type ion source. The 3x10 -6 Torr operational pressure is provided by three turbomolecular pumps. The maximum dose is 1 μCb/cm 2 min and to ensure uniformity of the implantation on the 100x105 mm 2 target area the ion beam is swept electrostatically. According to the testing experiments the inhomogenity can be taken to be +-1.3%. (Sz.N.Z.)

  13. TEM study of amorphous alloys produced by ion implantation

    International Nuclear Information System (INIS)

    Johnson, E.; Grant, W.A.; Wohlenberg, P.; Hansen, P.; Chadderton, L.T.

    1978-01-01

    Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam, penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams. This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy + and P + ions at doses between 10 13 - 10 17 ions/cm 2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens. Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel. (Auth.)

  14. Material synthesis for silicon integrated-circuit applications using ion implantation

    Science.gov (United States)

    Lu, Xiang

    of microscopic images. The underlying hydrogen profiles for between 250sp°C and 500sp°C annealing are characterized by SIMS and HFS experiments. An ideal gas law model calculation suggests that the internal pressure of molecular hydrogen filled microcavities is in the range of Giga-Pascal, high enough to break the silicon crystal bond. A dose threshold which prevents cleavage is observed at 1.6× 10sp{17} cmsp{-2} for 40 kV hydrogen implantation. A initial defect, in a silicon substrate, induced by a hydrogen microcavity is modeled as a circular crack which is embedded at a certain depth from the top silicon surface. A two-dimensional finite element model is made to calculate energy release rate along the crack surfaces. This numerical model predicts that the energy release rate is sufficient to overcome the silicon fracture toughness. The model further identifies the factors that can enhance the energy release rate. Ion-Cut SOI wafer fabrication technique is implemented using Pm. The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple Pm reactor setup and its compatibility with cluster-tool IC manufacturing system offer other Ion-Cut process optimization opportunities. The feasibility of Pm Ion-Cut process has been demonstrated with successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration, with minimal effect on the Ion-Cut process by the residual ion components. We have also demonstrated the feasibility of performing Ion-Cut using Pm in helium plasma.

  15. Improving Aspergillus niger tannase yield by N+ ion beam implantation

    Directory of Open Access Journals (Sweden)

    Wei Jin

    2013-02-01

    Full Text Available This work aimed to improve tannase yield of Aspergillus niger through N+ ion beam implantation in submerged fermentation. The energy and dose of N+ ion beam implantation were investigated. The results indicated that an excellent mutant was obtained through nine successive implantations under the conditions of 10 keV and 30-40 (×2.6×10(13 ions/cm², and its tannase yield reached 38.5 U/mL, which was about five-time higher than the original strain. The study on the genetic stability of the mutant showed that its promising performance in tannase production could be stable. The studies of metal ions and surfactants affecting tannase yield indicated that manganese ions, stannum ions, xylene and SDS contained in the culture medium had positive effects on tannase production under submerged fermentation. Magnesium ions, in particular, could enhance the tannase yield by the mutant increasing by 42%, i.e. 53.6 U/mL. Accordingly, low-energy ion implantation could be a desirable approach to improve the fungal tannase yield for its commercial application.

  16. Ion implantation induced martensite nucleation in SUS301 steel

    International Nuclear Information System (INIS)

    Kinoshita, Hiroshi; Takahashi, Heishichiro; Gustiono, Dwi; Sakaguchi, Norihito; Shibayama, Tamaki; Watanabe, Seiichi

    2007-01-01

    Phase transformation behaviors of the austenitic 301 stainless steel was studied under Fe + , Ti + and Ar + ions implantation at room temperature with 100, 200 and 300 keV up to fluence of 1x10 21 ions/m 2 and the microstructures were observed by means of transmission electron microscopy (TEM). The plane and cross-sectional observations of the implanted specimen showed that the induced-phases due to implantation from the γ matrix phase were identified as α' martensite phases with the orientation relationship of (11-bar0) α parallel (111-bar) γ and [111] α parallel [011] γ close to the Kurdjumov-Sachs (K-S). The ion implantation induced phases nucleated near the surface region and the depth position of the nucleation changed depending on the ion accelerating energy and ion species. It was also found that the induced marten sites phases nucleate under the influence of the stress distribution, which is introduced due to the concentration of implanted ions, especially due to the stress gradient caused by the corresponding concentration gradient. (author)

  17. Structural changes in the polyethylene after ion implantation

    International Nuclear Information System (INIS)

    Proskova, K.; Svorcik, V.

    1999-01-01

    This work deals with the study of the polyethylene (PE) after its modification by ion implantation. In this way the mechanical, optical, magnetic and electric characteristics can be changed. Experiments were processed on PE films with 15 μm thickness. For modification of the surface of PE for implantation the Ar + ions with the energy 63 keV and Xe + ions with the energy 156 keV and with doses from 1·10 13 to 3·10 15 cm +2 were used. The aim of this work was the study of structural changes of modified layer of the PE

  18. The ion implantation of metals and engineering materials

    International Nuclear Information System (INIS)

    Dearnaley, G.

    1978-01-01

    An entirely new method of metal finishing, by the process of ion implantation, is described. Introduced at first for semiconductor device applications, this method has now been demonstrated to produce major and long-lasting improvements in the durability of material surfaces, as regards both wear and corrosion. The process is distinct from that of ion plating, and it is not a coating technique. After a general description of ion implantation examples are given of its effects on wear behaviour (mostly in steels and cemented carbides) and on corrosion, in a variety of metals and alloys. Its potential for producing decorative finishes is mentioned briefly. The equipment necessary for carrying out ion implantation for engineering applications has now reached the prototype stage, and manufacture of plant for treating a variety of tools and components is about to commence. These developments are outlined. (author)

  19. Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation

    International Nuclear Information System (INIS)

    Bridwell, L.B.; Giedd, R.E.; Wang Yongqiang; Mohite, S.S.; Jahnke, T.; Brown, I.M.

    1991-01-01

    Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 10 16 -10 17 ions/cm 2 . Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As. (orig.)

  20. Modification of electrical properties of polymer membranes by ion implantation

    International Nuclear Information System (INIS)

    Dworecki, K.; Hasegawa, T.; Sudlitz, K.; Wasik, S.

    2000-01-01

    This paper presents an experimental study of the electrical properties of polymer ion irradiated polyethylene terephthalate (PET) membranes. The polymer samples have been implanted with a variety of ions (O 5+ , N 4+ , Kr 9+ ) by the energy of 10 keV/q up to doses of 10 15 ions/cm 2 and then they were polarized in an electric field of 4.16x10 6 V/m at non-isothermal conditions. The electrical properties and the changes in the chemical structure of implanted membrane were measured by conductivity and discharge currents and FTIR spectra. Electrical conductivity of the membranes PET increases to 1-3 orders of magnitude after implantation and is determined by the charge transport caused by free space charge and by thermal detrapping of charge carriers. The spectra of thermally induced discharge current (TDC) shows that ion irradiated PET membranes are characterized by high ability to accumulate charge

  1. Surface modification of commercial tin coatings by carbon ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, L J; Sood, D K; Manory, R R [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

  2. Surface modification of commercial tin coatings by carbon ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, L.J.; Sood, D.K.; Manory, R.R. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Commercial TiN coatings of about 2 {mu}m thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10{sup 17} - 8x10{sup 17} ions cm{sup -2}. Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs.

  3. Surface modification of commercial tin coatings by carbon ion implantation

    International Nuclear Information System (INIS)

    Liu, L.J.; Sood, D.K.; Manory, R.R.

    1993-01-01

    Commercial TiN coatings of about 2 μm thickness on high speed steel substrates were implanted at room temperature with 95 keV carbon ions at nominal doses between 1 x 10 17 - 8x10 17 ions cm -2 . Carbon ion implantation induced a significant improvement in ultramicrohardness, friction coefficient and wear properties. The surface microhardness increases monotonically by up to 115% until a critical dose is reached. Beyond this dose the hardness decreases, but remains higher than that of unimplanted sample. A lower friction coefficient and a longer transition period towards a steady state condition were obtained by carbon ion implantation. The changes in tribomechanical properties are discussed in terms of radiation damage and possible formation of a second phase rich in carbon. 6 refs., 3 figs

  4. Implantation of D+ ions in niobium and deuterium gas reemission

    International Nuclear Information System (INIS)

    Pisarev, A.A.; Tel'kovskij, V.G.

    1975-01-01

    This is a study of the implanting and reflex gasoisolation of D ions in niobium. It has been discovered that deutrium scope and gasoisolation are defined by several processes. An assumption is made that in ion bombarding conditions the implanting solutions are possible to exist and that deutrium can be replaced on the basis of niobium and hydrid compounds NbxDy. The portion of the particles entrained in the metal in one or another way depends on the ion energy. The dependence of the scope coefficient of n D + ions from the target temperature in the range of 290-1500 K was registered. An increase of the scope coefficient of the ions at high temperature with an increase of the ion energy was discovered

  5. Study of ion implantation in grown layers of multilayer coatings under ion-plasma vacuum deposition

    International Nuclear Information System (INIS)

    Voevodin, A.A.; Erokhin, A.L.

    1993-01-01

    The model of ion implantation into growing layers of a multilayer coating produced with vacuum ion-plasma deposition was developed. The model takes into account a possibility for ions to pass through the growing layer and alloys to find the distribution of implanted atoms over the coating thickness. The experimental vitrification of the model was carried out on deposition of Ti and TiN coatings

  6. Determining the Interstellar Wind Longitudinal Inflow Evolution Using Pickup Ions in the Helium Focusing Cone

    Science.gov (United States)

    Spitzer, S. A.; Gilbert, J. A.; Lepri, S. T.

    2017-12-01

    We propose to determine the longitudinal inflow direction of the local interstellar medium through the Heliosphere. This longitudinal inflow direction directly correlates to the longitudinal direction of the helium focusing cone with respect to the Sun. We can calculate this direction by finding the He+ pickup ion density peak as mass spectrometers such as ACE/SWICS, Wind/STICS, and Helios/Micrometeoroid Detector and Analyzer pass through the focusing cone. Mapping from the location of this density peak to the Sun, around which the helium is focused, will directly yield the desired longitudinal direction. We will find this direction for each year since the first measurements in the 1970s through the present and thereby analyze its evolution over time. This poster outlines our proposed method and initial results.

  7. The influence of ion implantation on the oxidation of nickel

    International Nuclear Information System (INIS)

    Goode, P.D.

    1975-11-01

    The effects of ion implantation on the oxidation of polycrystalline nickel have been studied for a range of implanted species: viz. He, Li, Ne, Ca, Ti, Ni, Co, Xe, Ce and Bi. The oxides were grown in dry oxygen at 630 0 C and the 16 O(d,p) 17 O nuclear reaction technique used to determine the amount of oxygen taken up. The influence of atomic and ionic size, valency and electronegativity of the implanted impurities was studied as also were the effects of ion bombardment damage and the influence of sputtering during implantation. Atomic size and the annealing of disorder were found to have a marked influence on oxide growth rate. The dependence of oxidation on annealing was further studied by implanting polycrystalline specimens with self ions and observing the oxide growth rate as a function of annealing temperature. A peak in the curve was found at 400 0 C and a similar peak observed at a somewhat higher temperature for oxidised single crystals. It is concluded that the oxidation rate will be influenced by those factors which alter the epitaxial relationship between metal and growing oxide. Such factors include atomic size of the implanted species, surface strain induced by implantation and changes in surface topography as a result of sputtering. In addition a model based on vacancy assisted cation migration is proposed to explain enhanced oxidation observed over a limited temperature range. (author)

  8. Polymer tribology by combining ion implantation and radionuclide tracing

    International Nuclear Information System (INIS)

    Timmers, Heiko; Gladkis, Laura G.; Warner, Jacob A.; Byrne, Aidan P.; Grosso, Mariela F. del; Arbeitman, Claudia R.; Garcia-Bermudez, Gerardo; Geruschke, Thomas; Vianden, Reiner

    2010-01-01

    Radionuclide tracers were ion implanted with three different techniques into the ultra-high molecular weight polyethylene polymer. Tracer nuclei of 7 Be were produced with inverse kinematics via the reaction p( 7 Li, 7 Be)n and caught by polymer samples at a forward scattering angle with a maximum implantation energy of 16 MeV. For the first time, 97 Ru, 100 Pd, and, independently, 111 In have been used as radionuclide tracers in ultra-high molecular weight polyethylene. 97 Ru and 100 Pd were recoil-implanted following the fusion evaporation reactions 92 Zr( 12 C,α3n) 97 Ru and 92 Zr( 12 C,4n) 100 Pd with a maximum implantation energy of 8 MeV. 111 In ions were produced in an ion source, mass-separated and implanted at 160 keV. The tribology of implanted polymer samples was studied by tracing the radionuclide during mechanical wear. Uni-directional and bi-directional sliding apparatus with stainless steel actuators were used. Results suggest a debris exchange process as the characteristic feature of the wear-in phase. This process can establish the steady state required for a subsequently constant wear rate in agreement with Archard's equation. The nano-scale implantation of mass-separated 111 In appears best suited to the study of non-linear tribological processes during wear-in. Such non-linear processes may be expected to be important in micro- and nanomachines.

  9. Surface modification of austenitic stainless steel by titanium ion implantation

    International Nuclear Information System (INIS)

    Evans, P.J.; Hyvarinen, J.; Samandi, M.

    1995-01-01

    The wear properties of AISI 316 austenitic stainless steel implanted with Ti were investigated for ion doses in the range (2.3-5.4)x10 16 ionscm -2 and average ion energies of 60 and 90keV. The implanted layer was examined by Rutherford backscattering, from which the retained doses were determined, and glow discharge optical emission spectroscopy. Following implantation, the surface microhardness was observed to increase with the greatest change occurring at higher ion energy. Pin-on-disc wear tests and associated friction measurements were also performed under both dry and lubricated conditions using applied loads of 2N and 10N. In the absence of lubrication, breakthrough of the implanted layer occurred after a short sliding time; only for a dose of 5.1x10 16 ionscm -2 implanted at an average energy of 90keV was the onset of breakthrough appreciably delayed. In contrast, the results of tests with lubrication showed a more gradual variation, with the extent of wear decreasing with implant dose at both 2N and 10N loads. Finally, the influence of Ti implantation on possible wear mechanisms is discussed in the light of information provided by several surface characterization techniques. ((orig.))

  10. Development of the ERC cold-cathode ion source for use on the PR-30 ion-implantation system

    International Nuclear Information System (INIS)

    Bird, H.M.B.; Flemming, J.P.

    1978-01-01

    The ERC cold-cathode ion source has been in routine production use on several PR-30 systems for the past three years. This source has been further developed to improve target current, lifetime, and stability. The ion-optical lens has been changed from circular to elliptical geometry in order to provide an asymmetric beam for entry into the PR-30 analyzing magnet. This measure, as well as the use of higher extraction voltages, provides higher beam currents on the PR-30 target wafers. Beam steering in the nondispersive direction has been provided to correct the effects of minor machine misalignments, further enhancing target current. The discharge chamber has been modified to increase source lifetime. A new gas-feed control system and a new method of oven temperature control have been devised to provide good source and ion beam stability. The source operates with only occasional attention by unskilled personnel, and has been used principally for boron and arsenic implants. Target currents of 1-mA boron and 4-mA arsenic can be obtained routinely. Lifetimes are of the order of 40--80 h, depending on ion species. The source has also been used to provide 5-mA phosphorus, 4-mA argon, 3-mA helium and neon, and 0.3-mA nickel and palladium ion beams

  11. Computer simulation of damage processes during ion implantation

    International Nuclear Information System (INIS)

    Kang, H.J.; Shimizu, R.; Saito, T.; Yamakawa, H.

    1987-01-01

    A new version for the marlowe code, which enables dynamic simulation of damage processes during ion implantation to be performed, has been developed. This simulation code is based on uses of the Ziegler--Biersack--Littmark potential [in Proceedings of the International Engineering Congress on Ion Sources and Ion-Assisted Technology, edited by T. Takagi (Ionic Co., Tokyo, 1983), p. 1861] for elastic scattering and Firsov's equation [O. B. Firsov, Sov. Phys. JETP 61, 1453 (1971)] for electron stopping

  12. Structural changes in the polyethylene after ion implantation

    International Nuclear Information System (INIS)

    Proskova, K.; Svorcik, V.

    1999-01-01

    This work deals with the study of structural changes of the polyethylene after ion implantation. There were used the polyethylene film with thickness 15 μm, and Ar + ions with energy 63 keV and Xe + ions with energy 156 keV with doses 1·10 13 - 3·10 15 cm -2 for experiments. For the study of structural changes of polymer were used methods UV-VIS spectrometry, ESR, Rutherford back scattering

  13. Progress in ion implantation equipment for semiconductor manufacturing

    International Nuclear Information System (INIS)

    Kawai, Tadashi; Naito, Masao

    1987-01-01

    In the semiconductor device manufacturing industry, ion implantation systems are used to dope semiconductor substrates with impurities that act as donor or acceptor. In an ion implantation system, required impurity ions are generated from an ion source, subjected to mass analysis, accelerated, converged and implanted in semiconductor wafers. High-tension arc tends to cause troubles in these systems, but improvement in design increased the average operation rate of medium-power systems from bout 70 percent to 90 percent during the past 10 years. Freeman type ion sources have replaced most RF ion sources and cold cathode PIG sources, which had been widely used until the early 1970s. Many of the recent ion sources are equipped with a P and As vaporizer to increase the beam intensity. By an increased beam intensity or decreased handling time in combination with an automatic handling system, the throughput has reached 330 wafers per hour for 10 second implantation. The yield has increased due to the development of improved scanning methods, vacuum devices such as cryopump, and processes and apparatus that serve for preventing particles from being contained in micro-devices. Various other improvements have been made to permit efficient production. (Nogami, K.)

  14. Optimal pulse modulator design criteria for plasma source ion implanters

    International Nuclear Information System (INIS)

    Reass, W.

    1993-01-01

    This paper describes what are believed to be the required characteristics of a high-voltage modulator for efficient and optimal ion deposition from the ''Plasma Source Ion Implantation'' (PSII) process. The PSII process is a method to chemically or physically alter and enhance surface properties of objects by placing them in a weakly ionized plasma and pulsing the object with a high negative voltage. The attracted ions implant themselves and form chemical bonds or are interstitially mixed with the base material. Present industrial uses of implanted objects tends to be for limited-production, high-value-added items. Traditional implanting hardware uses the typical low-current (ma) semiconductor ''raster scan'' implanters. The targets must also be manipulated to maintain a surface normal to the ion beam. The PSII method can provide ''bulk'' equipment processing on a large industrial scale. For the first generation equipment, currents are scaled from milliamps to hundreds of amps, voltages to -175kV, at kilohertz rep-rates, and high plasma ion densities

  15. Modeling Space-Time Dependent Helium Bubble Evolution in Tungsten Armor under IFE Conditions

    International Nuclear Information System (INIS)

    Qiyang Hu; Shahram Sharafat; Nasr Ghoniem

    2006-01-01

    The High Average Power Laser (HAPL) program is a coordinated effort to develop Laser Inertial Fusion Energy. The implosion of the D-T target produces a spectrum of neutrons, X-rays, and charged particles, which arrive at the first wall (FW) at different times within about 2.5 μs at a frequency of 5 to 10 Hz. Helium is one of several high-energy charged particle constituents impinging on the candidate tungsten armored low activation ferritic steel First Wall. The spread of the implanted debris and burn helium energies results in a unique space-time dependent implantation profile that spans about 10 μm in tungsten. Co-implantation of X-rays and other ions results in spatially dependent damage profiles and rapid space-time dependent temperature spikes and gradients. The rate of helium transport and helium bubble formation will vary significantly throughout the implanted region. Furthermore, helium will also be transported via the migration of helium bubbles and non-equilibrium helium-vacancy clusters. The HEROS code was developed at UCLA to model the spatial and time-dependent helium bubble nucleation, growth, coalescence, and migration under transient damage rates and transient temperature gradients. The HEROS code is based on kinetic rate theory, which includes clustering of helium and vacancies, helium mobility, helium-vacancy cluster stability, cavity nucleation and growth and other microstructural features such as interstitial loop evolution, grain boundaries, and precipitates. The HEROS code is based on space-time discretization of reaction-diffusion type equations to account for migration of mobile species between neighboring bins as single atoms, clusters, or bubbles. HAPL chamber FW implantation conditions are used to model helium bubble evolution in the implanted tungsten. Helium recycling rate predictions are compared with experimental results of helium ion implantation experiments. (author)

  16. Comparison of multilayered nanowire imaging by SEM and Helium Ion Microscopy

    International Nuclear Information System (INIS)

    Inkson, B J; Peng, Y; Jepson, M A E; Rodenburg, C; Liu, X

    2010-01-01

    The helium ion microscope (HeIM) is capable of probe sizes smaller than SEM and, with intrinsically small ion/sample interaction volumes, may therefore potentially offer higher spatial resolution secondary electron (SE) imaging of nanostructures. Here 55 nm diameter CoPt/Pt multilayered nanowires have been imaged by HeIM, SEM and TEM. It is found that there is an increased resolution of nanowire surface topography in HeIM SE images compared to SEM, however there is a reduction of materials contrast of the alternating Pt and CoPt layers. This can be attributed to the increased contribution of surface contamination layers to the ion-induced SE signal, and carbon is also observed to grow on the nanowires under prolonged HeIM scanning.

  17. The scattering of low energy helium ions and atoms from a copper single crystal, ch. 2

    International Nuclear Information System (INIS)

    Verheij, L.K.; Poelsema, B.; Boers, A.L.

    1976-01-01

    The scattering of 4-10 keV helium ions from a copper surface cannot be completely described with elastic, single collisions. The general behaviour of the measured energy and width of the surface peak can be explained by differences in inelastic energy losses for scattering from an ideal surface and from surface structures (damage). Multiple scattering effects have a minor influence. Additional information about the inelastic processes is obtained from scattering experiments with a primary atom beam. For large angles of incidence, the energy of the reflected ions is reduced about 20 eV if the primary beam consists of atoms instead of ions. An explanation of this effect and an explanation of the different behaviour of small angles is given. In the investigated energy range, the electronic stopping power might depend on the charge state of the primary particles. The experimental results are rather well explained by the Lindhard, Scharff, Schioett theory

  18. Magnetic patterning by means of ion irradiation and implantation

    International Nuclear Information System (INIS)

    Fassbender, J.; McCord, J.

    2008-01-01

    A pure magnetic patterning by means of ion irradiation which relies on a local modification of the magnetic anisotropy of a magnetic multilayer structure has been first demonstrated in 1998. Since then also other magnetic properties like the interlayer exchange coupling, the exchange bias effect, the magnetic damping behavior and the saturation magnetization to name a few have also been demonstrated to be affected by ion irradiation or ion implantation. Consequently, all these effects can be used if combined with a masking technique or employing direct focused ion beam writing for a magnetic patterning and thus an imprinting of an artificial magnetic domain structure, which subsequently modifies the integral magnetization reversal behavior or the magnetization dynamics of the film investigated. The present review will summarize how ion irradiation and implantation can affect the magnetic properties by means of structural modifications. The main part will cover the present status with respect to the pure magnetic patterning of micro- and nano structures

  19. Critical microstructure for ion-implantation gettering effects in silicon

    International Nuclear Information System (INIS)

    Geipel, H.J.; Tice, W.K.

    1977-01-01

    The nature of residual ion-implantation damage responsible for gettering deleterious impurities from active semiconductor device regions in Si has been studied. A propensity for dislocations of the type b=1/2 to gather metallic contaminant (e.g., Cu), as compared to Frank partials b=1/3 , is established. Transmission electron microscopy and pulsed leakage measurements are used to demonstrate that the density of 1/2 dislocations introduced by Xe implantation greatly influences gettering efficiency

  20. Annealing behavior and selected applications of ion-implanted alloys

    International Nuclear Information System (INIS)

    Myers, S.M.

    Thermally activated processes cause ion-implanted metals to evolve from the initial state toward thermodynamic equilibrium. The degree of equilibration is strongly dependent upon temperature and is considered for three temperature regimes which are distinguished by the varying mobilities of interstitial and substitutional atoms. In addition, perturbations resulting from the irradiation environment are discussed. Examples are given of the use of implanted and annealed alloys in studies of diffusion, phase diagrams, and solute trapping

  1. Investigation of helium-induced embrittlement

    International Nuclear Information System (INIS)

    Sabelova, V.; Slugen, V.; Krsjak, V.

    2014-01-01

    In this work, the hardness of Fe-9%(wt.) Cr binary alloy implanted by helium ions up to 1000 nm was investigated. The implantations were performed using linear accelerator at temperatures below 80 grad C. Isochronal annealing up to 700 grad C with the step of 100 grad C was applied on the helium implanted samples in order to investigate helium induced embrittlement of material. Obtained results were compared with theoretical calculations of dpa profiles. Due to the results, the nano-hardness technique results to be an appropriate approach to the hardness determination of thin layers of implanted alloys. Both, experimental and theoretical calculation techniques (SRIM) show significant correlation of measured results of induced defects. (authors)

  2. Helium Ion Microscopy: A Promising Tool for Probing Biota-Mineral Interfaces

    Science.gov (United States)

    Lybrand, R.; Zaharescu, D. G.; Gallery, R. E.

    2017-12-01

    The study of biogeochemical interfaces in soil requires powerful technologies that can enhance our ability to characterize mineral surfaces and interacting organisms at micro- to nanoscale resolutions. We aim to demonstrate potential applications of Helium Ion Microscopy in the earth and ecological sciences using, as an example, samples from a field experiment. We assessed samples deployed for one year along climatic and topographic gradients in two Critical Zone Observatories (CZOs): a desert to mixed conifer forest gradient (Catalina CZO) and a humid hardwood forest (Calhoun CZO). Sterile ground rock (basalt, quartz, and granite; 53-250 µm) was sealed into nylon mesh bags and buried in the surface soils of both CZOs. We employed helium ion and scanning electron microscopies to compare retrieved ground rock samples with sterile unreacted mineral controls in conjunction with the Environmental Molecular Sciences Laboratory at Pacific Northwest National Laboratory, USA. Our work showed early colonization of mesh bag materials by fungal and bacterial organisms from the field systems and identified morphological changes in mineral grains following exposure to the soil environment. Biological specimens observed on grain surfaces exhibited contrasting features depending on mineral type and ecosystem location, including fungal hyphae that varied in length, diameter, and surface morphologies. We also present imagery that provides evidence for incipient stages of mineral transformation at the fungal-mineral interface. Our findings demonstrate that helium ion microscopy can be successfully used to characterize grain features and biological agents of weathering in experimental field samples, representing a promising avenue for research in the biogeosciences. Future directions of this work will couple high resolution imaging with measures of aqueous and solid geochemistry, fungal morphological characterization, and microbial profiling to better understand mineral

  3. Ion implantation for manufacturing bent and periodically bent crystals

    Energy Technology Data Exchange (ETDEWEB)

    Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo, E-mail: guidi@fe.infn.it; Mazzolari, Andrea; Paternò, Gianfranco [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1/c, 44122 Ferrara, Italy and INFN, Section of Ferrara (Italy); Mattei, Giovanni, E-mail: giovanni.mattei@unipd.it; Scian, Carlo [Department of Physics and Astronomy Galileo Galilei, University of Padova, Via Marzolo 8, 35131 Padova (Italy); Lanzoni, Luca [Dipertimento di Economia e Tecnologia, Università degli Studi della Repubblica di San Marino, Salita alla Rocca, 44, 47890 San Marino Città (San Marino)

    2015-08-10

    Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.

  4. Yttrium ion implantation on the surface properties of magnesium

    International Nuclear Information System (INIS)

    Wang, X.M.; Zeng, X.Q.; Wu, G.S.; Yao, S.S.

    2006-01-01

    Owing to their excellent physical and mechanical properties, magnesium and its alloys are receiving more attention. However, their application has been limited to the high reactivity and the poor corrosion resistance. The aim of the study was to investigate the beneficial effects of ion-implanted yttrium using a MEVVA ion implanter on the surface properties of pure magnesium. Isothermal oxidation tests in pure O 2 at 673 and 773 K up to 90 min indicated that the oxidation resistance of magnesium had been significantly improved. Surface morphology of the oxide scale was analyzed using scanning electron microscope (SEM). Auger electron spectroscopy (AES) and X-ray diffraction (XRD) analyses indicated that the implanted layer was mainly composed of MgO and Y 2 O 3 , and the implanted layer with a duplex structure could decrease the inward diffusion of oxygen and reduce the outward diffusion of Mg 2+ , which led to improving the oxidation resistance of magnesium. Potentiodynamic polarization curves were used to evaluate the corrosion resistance of the implanted magnesium. The results show yttrium implantation could enhance the corrosion resistance of implanted magnesium compared with that of pure magnesium

  5. Data on ionization, excitation, dissociation and dissociative ionization of targets by helium ion bombardments, (1)

    International Nuclear Information System (INIS)

    Oda, Nobuo; Urakawa, Junji

    1984-03-01

    This report presents a compilation of the experimental data on cross sections for the ionization, excitation, dissociation and dissociative ionization processes of targets in helium ion impacts on atoms and molecules under a single collision condition. These measurements were carried out in the energy range from several keV to 3.5 MeV. A systematic survey has been made on the literatures from 1975 to the end of 1982. A list of references is also given, including relevant papers published before 1975. (author)

  6. Calculation of helium-like ion dipole susceptibility with account for electron interaction

    International Nuclear Information System (INIS)

    Pal'chikov, V.G.; Tkachev, A.N.

    1989-01-01

    Numerical estimations of electron interaction effects are carried out for helium-like ions inserted in a homogeneous electric field. Statistical dipole polarizations and hyperpolarizations are calculated for the main state taking into account corrections of the first order to approximation of noninteracting electrons. Summation according to the full spectrum of intermediate states is carried out by the method of Coulomb-Green functions (CGF), that permitted to use analytical methods to calculate matrix elements of correlation diagrams. When calculating polarizations, relativistic corrections ∼(αZ) 2 , where α - the constant of a fine structure, Z-nucleus charge, are taken into account

  7. Ion implantation of CdTe single crystals

    International Nuclear Information System (INIS)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2017-01-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (10"1"7 1/cm"2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  8. Development of a CMOS process using high energy ion implantation

    International Nuclear Information System (INIS)

    Stolmeijer, A.

    1986-01-01

    The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

  9. Mutation effect of ion implantation on tomato breeding

    International Nuclear Information System (INIS)

    Wu Baoshan; Ling Haiqiu; Mao Peihong; Jin Xiang; Zeng Xianxian

    2003-01-01

    The mutation effects of N + ion implantation on cultivated tomato, Catchup type and Eatable type were studied. The result show that the mutation ranges of single-fruit weight and fruit number per plant were increased and their mutation frequencies were high, however the effect of ion implantation on germination rate of seed and quality of fruit was very weak. Using doses of 4 x 10 16 and 6 x 10 16 N + /cm 2 , the yield was greatly improved. The optimum mutation dosage was slightly different for seed of 2 tomato lines

  10. Development of Mechanical Improvement of the Cladding by Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Han, J G; Lee, S B [Sungkyunkwan University, Seoul (Korea, Republic of); Kim, S H [Kangwon University, Chunchon (Korea, Republic of); Song, G [Suwon College, Suwon (Korea, Republic of)

    1997-07-01

    In this research we analyzed the state of art related to the surface treatment method of nuclear fuel cladding for the development of the surface treatment technique of nuclear fuel cladding by ion beam while investigating major causes of the leakage of fuel rods. Ion implantation simulation code called TRIM-95 was used to decide basic parameters ion beams and wetup an appropriate process for ion implantation. For the mechanical properties measurements, a high temperature wear resistance tester, a fretting wear tester, and a fretting fatigue resistance tester were constructed. Using these testers, some mechanical properties as micro hardness, wear resistance against AISI52100 and AI{sub 2}O{sub 3} balls, and fretting properties were measured and analyzed for the implanted materials as a function of ion dose and processing temperature. Effect of the oxygen atmosphere was measured in the nitrogen implantation. Auger electron spectroscopy(AES) was applied for the depth profile, and X-ray diffraction was used for the nitrogen and oxide measurements. 48 refs., 7 tabs., 46 figs. (author)

  11. Modeling secondary electron emission from nanostructured materials in helium ion microscope

    International Nuclear Information System (INIS)

    Ohya, K.; Yamanaka, T.

    2013-01-01

    Charging of a SiO 2 layer on a Si substrate during helium (He) beam irradiation is investigated at an energy range relevant to a He ion microscope (HIM). A self-consistent calculation is performed to model the transport of the ions and secondary electrons (SEs), the charge accumulation in the layer, and the electric field below and above the surface. The calculated results are compared with those for gallium (Ga) ions at the same energy and 1 keV electrons corresponding to a low-voltage scanning electron microscope (SEM). The charging of thin layers ( 2 step formed on a Si substrate, a sharp increase in the number of SEs is observed, irrespective of whether a material is charged or not. When the He ions are incident on the bottom of the step, the re-entrance of SEs emitted from the substrate into the sidewall is clearly observed, but it causes the sidewall to be charged negatively. At the positions on the SiO 2 layer away from the step edge, the charging voltage becomes positive with increasing number of Ga ions and electrons. However, He ions do not induce such a voltage due to strong relaxation of positive and negative charges in the Si substrate and their recombination in the SiO 2 layer

  12. 2D imaging of helium ion velocity in the DIII-D divertor

    Science.gov (United States)

    Samuell, C. M.; Porter, G. D.; Meyer, W. H.; Rognlien, T. D.; Allen, S. L.; Briesemeister, A.; Mclean, A. G.; Zeng, L.; Jaervinen, A. E.; Howard, J.

    2018-05-01

    Two-dimensional imaging of parallel ion velocities is compared to fluid modeling simulations to understand the role of ions in determining divertor conditions and benchmark the UEDGE fluid modeling code. Pure helium discharges are used so that spectroscopic He+ measurements represent the main-ion population at small electron temperatures. Electron temperatures and densities in the divertor match simulated values to within about 20%-30%, establishing the experiment/model match as being at least as good as those normally obtained in the more regularly simulated deuterium plasmas. He+ brightness (HeII) comparison indicates that the degree of detachment is captured well by UEDGE, principally due to the inclusion of E ×B drifts. Tomographically inverted Coherence Imaging Spectroscopy measurements are used to determine the He+ parallel velocities which display excellent agreement between the model and the experiment near the divertor target where He+ is predicted to be the main-ion species and where electron-dominated physics dictates the parallel momentum balance. Upstream near the X-point where He+ is a minority species and ion-dominated physics plays a more important role, there is an underestimation of the flow velocity magnitude by a factor of 2-3. These results indicate that more effort is required to be able to correctly predict ion momentum in these challenging regimes.

  13. Influence of implanted helium on nickel resistance under simulation of plasma flux disruption in nuclear fusion reactor

    International Nuclear Information System (INIS)

    Kadin, B.A.; Pol'skij, V.I.; Yakushin, V.L.; Markin, A.V.; Tserevitinov, S.S.; Vasil'ev, V.I.

    1992-01-01

    Investigation results are presented of radiation erosion of constructive materials of the first wall of a thermonuclear reactor. The erosion is conditioned by successive repeated action of pulse processes, imitating plasma disruption, and helium ion fluxes at 40 keV and 2 x 10 21 -10 22 m -2 fluence. As imitating processes are used fluxes of deuterium high-temperature plasma. It is shown that preliminary action by high-temperature plasma leads to substantial suppression of radiation erosion, included by subsequent ion irradiation

  14. Amorphous GaP produced by ion implantation

    International Nuclear Information System (INIS)

    Shimada, T.; Kato, Y.; Shiraki, Y.; Komatsubara, K.F.

    1976-01-01

    Two types of non-crystalline states ('disordered' and 'amorphous') of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the 'disordered' state to the 'amorphous' state was observed. The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV -N + ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity. The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose. The optical absorption coefficient α and electric conductivity sigma of GaP crystals implanted with 200 keV -N + ions of 1 x 10 16 cm -2 were expressed as αhν = C(hν - E 0 )sup(n) and log sigma = A -BTsup(-1/4), respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order or short range order ('disordered state'). In the sample implanted at 1 x 10 16 cm -2 , a structural phase-transition-like annealing stage was observed at around 400 0 C. That is, the optical absorption coefficient abruptly fell off from 6 x 10 4 to 7 x 10 3 cm -1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing. These facts suggest that heavily implanted GaP, followed by annealing at around 400 0 C, is in the 'amorphous' state, although as-implanted GaP is not in the 'amorphous' state but in the

  15. Application of TXRF for ion implanter dose matching experiments

    Science.gov (United States)

    Frost, M. R.; French, M.; Harris, W.

    2004-06-01

    Secondary ion mass spectrometry (SIMS) has been utilized for many years to measure the dose of ion implants in silicon for the purpose of verifying the ability of ion implantation equipment to accurately and reproducibly implant the desired species at the target dose. The development of statistically and instrumentally rigorous protocols has lead to high confidence levels, particularly with regard to accuracy and short-term repeatability. For example, high-dose, high-energy B implant dosimetry can be targeted to within ±1%. However, performing dose determination experiments using SIMS does have undesirable aspects, such as being highly labor intensive and sample destructive. Modern total reflection X-ray fluorescence (TXRF) instruments are equipped with capabilities for full 300 mm wafer handling, automated data acquisition software and intense X-ray sources. These attributes enable the technique to overcome the SIMS disadvantages listed above, as well as provide unique strengths that make it potentially highly amenable to implanter dose matching. In this paper, we report on data collected to date that provides confidence that TXRF is an effective and economical method to perform these measurements within certain limitations. We have investigated a number of ion implanted species that are within the "envelope" of TXRF application. This envelope is defined by a few important parameters. Species: For the anode materials used in the more common X-ray sources on the market, each has its own set of elements that can be detected. We have investigated W and Mo X-ray sources, which are the most common in use in commercial instrumentation. Implant energy: In general, if the energy of the implanted species is too high (or more specifically, the distribution of the implanted species is too deep), the amount of dopant not detected by TXRF may be significant, increasing the error of the measurement. Therefore, for each species investigated, the implant energy cannot exceed a

  16. Corrosion resistance of titanium ion implanted AZ91 magnesium alloy

    International Nuclear Information System (INIS)

    Liu Chenglong; Xin Yunchang; Tian Xiubo; Zhao, J.; Chu, Paul K.

    2007-01-01

    Degradable metal alloys constitute a new class of materials for load-bearing biomedical implants. Owing to their good mechanical properties and biocompatibility, magnesium alloys are promising in degradable prosthetic implants. The objective of this study is to improve the corrosion behavior of surgical AZ91 magnesium alloy by titanium ion implantation. The surface characteristics of the ion implanted layer in the magnesium alloys are examined. The authors' results disclose that an intermixed layer is produced and the surface oxidized films are mainly composed of titanium oxide with a lesser amount of magnesium oxide. X-ray photoelectron spectroscopy reveals that the oxide has three layers. The outer layer which is 10 nm thick is mainly composed of MgO and TiO 2 with some Mg(OH) 2 . The middle layer that is 50 nm thick comprises predominantly TiO 2 and MgO with minor contributions from MgAl 2 O 4 and TiO. The third layer from the surface is rich in metallic Mg, Ti, Al, and Ti 3 Al. The effects of Ti ion implantation on the corrosion resistance and electrochemical behavior of the magnesium alloys are investigated in simulated body fluids at 37±1 deg. C using electrochemical impedance spectroscopy and open circuit potential techniques. Compared to the unimplanted AZ91 alloy, titanium ion implantation significantly shifts the open circuit potential (OCP) to a more positive potential and improves the corrosion resistance at OCP. This phenomenon can be ascribed to the more compact surface oxide film, enhanced reoxidation on the implanted surface, as well as the increased β-Mg 12 Al 17 phase

  17. Effect of ion implantation on thin hard coatings

    International Nuclear Information System (INIS)

    Auner, G.; Hsieh, Y.F.; Padmanabhan, K.R.; Chevallier, J.; Soerensen, G.

    1983-01-01

    The surface mechanical properties of thin hard coatings of carbides, nitrides and borides deposited by r.f. sputtering were improved after deposition by ion implantation. The thickness and the stoichiometry of the films were measured by Rutherford backscattering spectrometry and nuclear reaction analysis before and after ion bombardment. The post ion bombardment was achieved with heavy inert ions such as Kr + and Xe + with an energy sufficient to penetrate the film and to reach the substrate. Both the film adhesion and the microhardness were consistently improved. In order to achieve a more detailed understanding, Rb + and Ni + ions were also used as projectiles, and it was found that these ions were more effective than the inert gas ions. (Auth.)

  18. Helium behaviour in nuclear glasses

    International Nuclear Information System (INIS)

    Fares, T.

    2011-01-01

    The present thesis focuses on the study of helium behavior in R7T7 nuclear waste glass. Helium is generated by the minor actinides alpha decays incorporated in the glass matrix. Therefore, four types of materials were used in this work. These are non radioactive R7T7 glasses saturated with helium under pressure, glasses implanted with 3 He + ions, glasses doped with curium and glasses irradiated in nuclear reactor. The study of helium solubility in saturated R7T7 glass has shown that helium atoms are inserted in the glass free volume. The results yielded a solubility of about 10 16 at. cm -3 atm. -1 . The incorporation limit of helium in this type of glass has been determined; its value amounted to about 2*10 21 at. cm -3 , corresponding to 2.5 at.%. Diffusion studies have shown that the helium migration is controlled by the single population dissolved in the glass free volume. An ideal diffusion model was used to simulate the helium release data which allowed to determine diffusion coefficients obeying to the following Arrhenius law: D = D 0 exp(-E a /kBT), where D 0 = 2.2*10 -2 and 5.4*10 -3 cm 2 s -1 and E a = 0.61 eV for the helium saturated and the curium doped glass respectively. These results reflect a thermally activated diffusion mechanism which seems to be not influenced by the glass radiation damage and helium concentrations studied in the present work (up to 8*10 19 at. g -1 , corresponding to 0.1 at.%). Characterizations of the macroscopic, structural and microstructural properties of glasses irradiated in nuclear reactor did not reveal any impact associated with the presence of helium at high concentrations. The observed modifications i.e. a swelling of 0.7 %, a decrease in hardness by 38 %, an increase between 8 and 34 % of the fracture toughness and a stabilization of the glass structure under irradiation, were attributed to the glass nuclear damage induced by the irradiation in reactor. Characterizations by SEM and TEM of R7T7 glasses implanted

  19. Laws of phase formation in ion-implanted metals

    International Nuclear Information System (INIS)

    Kazdaev, H.R.; Abylkhalykova, R.B.; Skakov, M.K.

    2004-01-01

    Full text: Main laws of ordered structures formation at molybdenum implantation by elements forming phases of introduction (B, C, N, 0, Si, P, S) are discovered in this work. According to them the character of structural and phase transformations in molybdenum at ion implantation is determined not by kinetic parameters of bombarding particles and their chemical activity but by size factor η x/Me (ratio of nuclear radii of introduced elements and atoms of a matrix). At change of its meaning in the certain limits the following can be observed: superstructures formation (η x/Mo x/Mo x/Mo >0.69). In the latter case at the further implantation doze increasing recrystallization of molybdenum monocrystalline layers amorphized during previous bombarding with chemical connection formation takes place, characterized by us as ion-inducted synthesis. The phenomenon discovered on the samples implanted by phosphorus ions. As the result, the high-temperature phase of molybdenum monophosphide MoP having densely situated lattice was synthesized. The complete confirmation of the main laws of structural and phased transformations at ion implantation established by results on molybdenum monocrystals with OCC lattice was achieved at realization of similar researches on the other transitive metal - zirconium which differs from molybdenum according to a number of attributes: a type of an initial lattice structural condition (large scaled polycrystal), presence of interparticle borders and high solubility of atmospheric impurities (nitrogen, carbon, oxygen). The discovered laws have proved to be true also according to ion implanted samples of monocrystal tungsten and polycrystal tantalum

  20. Application of ion implantation in metals and alloys

    International Nuclear Information System (INIS)

    Dearnaley, G.

    1981-01-01

    Ion implantation first became established as a precise method of introducing dopant elements into semiconductors. It is now appreciated that there may be equally important applications in metallic tools or components with the purpose of improving their resistance to wear, fatigue or corrosion. Nitrogen ions implanted into steels pin dislocations and thereby harden the metal. Some metallic ions such as yttrium reduce the tendency for oxidative wear. There is a fairly good understanding of how both treatments can provide a long-lasting protection that extends to many times the original depth of implantation. Nitrogen implantation also improves the wear resistance of Co-cemented tungsten carbide and of hard chromium electroplated coatings. These treatments have wide application in press tools, molds, dies and other metal-forming tools as well as in a more limited variety of cutting tools. Some striking improvements can be achieved in the corrosion field, but there are economic and technical reasons for concluding that practical applications of ion implantation will be more restricted and specialized in this area. The most promising area is that in which mechanical stress and oxidation coexist. When a metallic species has to be introduced, a promising new development is to bombard a thin coating of the metal at an elevated temperature. Several powerful mechanisms of radiation-enhanced diffusion can bring about a complete intermixing. Examples of how this has been used to produce wear resistant surfaces in titanium are given. Finally, the equipment developed for the large scale application of the ion implantation process in the engineering field is described

  1. Comparison of oxidation resistance of copper treated by beam-line ion implantation and plasma immersion ion implantation

    International Nuclear Information System (INIS)

    An Quanzhang; Li Liuhe; Hu Tao; Xin Yunchang; Fu, Ricky K.Y.; Kwok, D.T.K.; Cai Xun; Chu, Paul K.

    2009-01-01

    Copper which has many favorable properties such as low cost, high thermal and electrical conductivity, as well as easy fabrication and joining is one of the main materials in lead frames, interconnects, and foils in flexible circuits. Furthermore, copper is one of the best antibacterial materials. However, unlike aluminum oxide or chromium oxide, the surface copper oxide layer does not render sufficient protection against oxidation. In this work, in order to improve the surface oxidation resistance of Cu, Al and N were introduced into copper by plasma immersion ion implantation (PIII) and beam-line ion implantation (BII). The implantation fluences of Al and N were 2 x 10 17 ions cm -2 and 5 x 10 16 ions cm -2 , respectively. The implanted and untreated copper samples were oxidized in air at 260 deg. C for 1 h. The X-ray diffraction (XRD), scanning electron microscopy (SEM), as well as X-ray photoelectron spectroscopy (XPS) results indicate that both implantation methods can enhance the oxidation resistance of copper but to different extent. PIII is superior to BII in enhancing the oxidation resistance of copper. The effects and possible mechanisms are discussed.

  2. Characterization of duplex hard coatings with additional ion implantation

    Directory of Open Access Journals (Sweden)

    B. Škorić

    2012-01-01

    Full Text Available In this paper, we present the results of a study of TiN thin fi lms which are deposited by a Physical Vapour Deposition (PVD and Ion Beam Assisted Deposition (IBAD. In the present investigation the subsequent ion implantation was provided with N+2 ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of eff ects such as crystallographic orientation, morphology, topography, densifi cation of the fi lms. The evolution of the microstructure from porous and columnar grains to densel packed grains is accompanied by changes in mechanical and physical properties. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM, Atomic Force Microscope (AFM, X-ray diff raction (XRD and Energy Dispersive X-ray analysis (EDAX.

  3. Analysis of metal ion release from biomedical implants

    Directory of Open Access Journals (Sweden)

    Ivana Dimić

    2013-06-01

    Full Text Available Metallic biomaterials are commonly used for fixation or replacement of damaged bones in the human body due to their good combination of mechanical properties. The disadvantage of metals as implant materials is their susceptibility to corrosion and metal ion release, which can cause serious health problems. In certain concentrations metals and metal ions are toxic and their presence can cause diverse inflammatory reactions, genetic mutations or even cancer. In this paper, different approaches to metal ion release examination, from biometallic materials sample preparation to research results interpretation, will be presented. An overview of the analytical techniques, used for determination of the type and concentration of released ions from implants in simulated biofluids, is also given in the paper.

  4. Sheath physics and materials science results from recent plasma source ion implantation experiments

    International Nuclear Information System (INIS)

    Conrad, J.R.; Radtke, J.L.; Dodd, R.A.; Worzala, F.J.

    1987-01-01

    Plasma Source Ion Implantation (PSII) is a surface modification technique which has been optimized for ion-beam processing of materials. PSII departs radically from conventional implantation by circumventing the line of sight restriction inherent in conventional ion implantation. The authors used PSII to implant cutting tools and dies and have demonstrated substantial improvements in lifetime. Recent results on plasma physics scaling laws, microstructural, mechanical, and tribological properties of PSII-implanted materials are presented

  5. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    International Nuclear Information System (INIS)

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  6. A method to measure depth distributions of implanted ions

    International Nuclear Information System (INIS)

    Arnesen, A.; Noreland, T.

    1977-04-01

    A new variant of the radiotracer method for depth distribution determinations has been tested. Depth distributions of radioactive implanted ions are determined by dissolving thin, uniform layers of evaporated material from the surface of a backing and by measuring the activity before and after the layer removal. The method has been used to determine depth distributions for 25 keV and 50 keV 57 Co ions in aluminium and gold. (Auth.)

  7. Average equilibrium charge state of 278113 ions moving in a helium gas

    International Nuclear Information System (INIS)

    Kaji, D.; Morita, K.; Morimoto, K.

    2005-01-01

    Difficulty to identify a new heavy element comes from the small production cross section. For example, the production cross section was about 0.5 pb in the case of searching for the 112th element produced by the cold fusion reaction of 208 Pb( 70 Zn,n) 277 ll2. In order to identify heavier elements than element 112, the experimental apparatus with a sensitivity of sub-pico barn level is essentially needed. A gas-filled recoil separator, in general, has a large collection efficiency compared with other recoil separators as seen from the operation principle of a gas-filled recoil separator. One of the most important parameters for a gas-filled recoil separator is the average equilibrium charge state q ave of ions moving in a used gas. This is because the recoil ion can not be properly transported to the focal plane of the separator, if the q ave of an element of interest in a gas is unknown. We have systematically measured equilibrium charge state distributions of heavy ions ( 169 Tm, 208 Pb, 193,209 Bi, 196 Po, 200 At, 203,204 Fr, 212 Ac, 234 Bk, 245 Fm, 254 No, 255 Lr, and 265 Hs) moving in a helium gas by using the gas-filled recoil separator GARIS at RIKEN. Ana then, the empirical formula on q ave of heavy ions in a helium gas was derived as a function of the velocity and the atomic number of an ion on the basis of the Tomas-Fermi model of the atom. The formula was found to be applicable to search for transactinide nuclides of 271 Ds, 272 Rg, and 277 112 produced by cold fusion reactions. Using the formula on q ave , we searched for a new isotope of element 113 produced by the cold fusion reaction of 209 Bi( 70 Zn,n) 278 113. As a result, a decay chain due to an evaporation residue of 278 113 was observed. Recently, we have successfully observed the 2nd decay chain due to an evaporation residue of 278 113. In this report, we will present experimental results in detail, and will also discuss the average equilibrium charge sate of 278 113 in a helium gas by

  8. Helium ion microscopy and energy selective scanning electron microscopy - two advanced microscopy techniques with complementary applications

    Science.gov (United States)

    Rodenburg, C.; Jepson, M. A. E.; Boden, Stuart A.; Bagnall, Darren M.

    2014-06-01

    Both scanning electron microscopes (SEM) and helium ion microscopes (HeIM) are based on the same principle of a charged particle beam scanning across the surface and generating secondary electrons (SEs) to form images. However, there is a pronounced difference in the energy spectra of the emitted secondary electrons emitted as result of electron or helium ion impact. We have previously presented evidence that this also translates to differences in the information depth through the analysis of dopant contrast in doped silicon structures in both SEM and HeIM. Here, it is now shown how secondary electron emission spectra (SES) and their relation to depth of origin of SE can be experimentally exploited through the use of energy filtering (EF) in low voltage SEM (LV-SEM) to access bulk information from surfaces covered by damage or contamination layers. From the current understanding of the SES in HeIM it is not expected that EF will be as effective in HeIM but an alternative that can be used for some materials to access bulk information is presented.

  9. Water equivalent thickness values of materials used in beams of protons, helium, carbon and iron ions.

    Science.gov (United States)

    Zhang, Rui; Taddei, Phillip J; Fitzek, Markus M; Newhauser, Wayne D

    2010-05-07

    Heavy charged particle beam radiotherapy for cancer is of increasing interest because it delivers a highly conformal radiation dose to the target volume. Accurate knowledge of the range of a heavy charged particle beam after it penetrates a patient's body or other materials in the beam line is very important and is usually stated in terms of the water equivalent thickness (WET). However, methods of calculating WET for heavy charged particle beams are lacking. Our objective was to test several simple analytical formulas previously developed for proton beams for their ability to calculate WET values for materials exposed to beams of protons, helium, carbon and iron ions. Experimentally measured heavy charged particle beam ranges and WET values from an iterative numerical method were compared with the WET values calculated by the analytical formulas. In most cases, the deviations were within 1 mm. We conclude that the analytical formulas originally developed for proton beams can also be used to calculate WET values for helium, carbon and iron ion beams with good accuracy.

  10. New views of the Toxoplasma gondii parasitophorous vacuole as revealed by Helium Ion Microscopy (HIM).

    Science.gov (United States)

    de Souza, Wanderley; Attias, Marcia

    2015-07-01

    The Helium Ion Microscope (HIM) is a new technology that uses a highly focused helium ion beam to scan and interact with the sample, which is not coated. The images have resolution and depth of field superior to field emission scanning electron microscopes. In this paper, we used HIM to study LLC-MK2 cells infected with Toxoplasma gondii. These samples were chemically fixed and, after critical point drying, were scraped with adhesive tape to expose the inner structure of the cell and parasitophorous vacuoles. We confirmed some of the previous findings made by field emission-scanning electron microscopy and showed that the surface of the parasite is rich in structures suggestive of secretion, that the nanotubules of the intravacuolar network (IVN) are not always straight, and that bifurcations are less frequent than previously thought. Fusion of the tubules with the parasite membrane or the parasitophorous vacuole membrane (PVM) was also infrequent. Tiny adhesive links were observed for the first time connecting the IVN tubules. The PVM showed openings of various sizes that even allowed the observation of endoplasmic reticulum membranes in the cytoplasm of the host cell. These findings are discussed in relation to current knowledge on the cell biology of T. gondii. Copyright © 2015 Elsevier Inc. All rights reserved.

  11. Helium ion microscopy of graphene: beam damage, image quality and edge contrast

    International Nuclear Information System (INIS)

    Fox, D; Zhou, Y B; O’Neill, A; Wang, J J; Coleman, J N; Donegan, J F; Zhang, H Z; Kumar, S; Duesberg, G S

    2013-01-01

    A study to analyse beam damage, image quality and edge contrast in the helium ion microscope (HIM) has been undertaken. The sample investigated was graphene. Raman spectroscopy was used to quantify the disorder that can be introduced into the graphene as a function of helium ion dose. The effects of the dose on both freestanding and supported graphene were compared. These doses were then correlated directly to image quality by imaging graphene flakes at high magnification. It was found that a high magnification image with a good signal to noise ratio will introduce very significant sample damage. A safe imaging dose of the order of 10 13 He + cm −2 was established, with both graphene samples becoming highly defective at doses over 5 × 10 14 He + cm −2 . The edge contrast of a freestanding graphene flake imaged in the HIM was then compared with the contrast of the same flake observed in a scanning electron microscope and a transmission electron microscope. Very strong edge sensitivity was observed in the HIM. This enhanced edge sensitivity over the other techniques investigated makes the HIM a powerful nanoscale dimensional metrology tool, with the capability of both fabricating and imaging features with sub-nanometre resolution. (paper)

  12. Direct energy recovery from helium ion beams by a beam direct converter with secondary electron suppressors

    International Nuclear Information System (INIS)

    Yoshikawa, K.; Yamamoto, Y.; Toku, H.; Kobayashi, A.; Okazaki, T.

    1989-01-01

    A 5-yr study of beam direct energy conversion was performed at the Kyoto University Institute of Atomic Energy to clarify the essential features of direct energy recovery from monoenergetic ion beams so that the performance characteristics of energy recovery can be predicted reasonably well by numerical calculations. The study used an improved version of an electrostatically electron-suppressed beam direct converter. Secondary electron suppressor grids were added, and a helium ion beam was used with typical parameters of 15.4 keV, 90 mA, and 100 ms. This paper presents a comparison of experimental results with numerical results by the two-dimensional Kyoto University Advanced Dart (KUAD) code, including evaluation of atomic processes

  13. Mechanical properties of tungsten following rhenium ion and helium plasma exposure

    Directory of Open Access Journals (Sweden)

    C.S. Corr

    2017-08-01

    Full Text Available Mechanical properties of Tungsten (W samples irradiated with 2 MeV Rhenium (Re ions and helium (He plasma were investigated using nanoindentation. It was found that there was an increase in hardness for all samples following separate irradiation with both Re ion and He plasma. A slight increase in hardness was obtained for combined exposures. A comparable increase in hardness was observed for a pure He plasma with a sample temperature of 473 K and 1273 K. Optical interferometry was employed to compare surface modification of the samples. Grazing incidence small angle x-ray scattering confirmed He nano-bubble formation of approximately 1 nm diameter in the higher temperature sample, which was not observed with samples at the lower temperatures.

  14. Helium mobility in advanced nuclear ceramics

    International Nuclear Information System (INIS)

    Agarwal, Shradha

    2014-01-01

    The main goal of this work is to improve our knowledge on the mechanisms able to drive the helium behaviour in transition metal carbides and nitrides submitted to thermal annealing or ion irradiation. TiC, TiN and ZrC polycrystals were implanted with 3 MeV 3 He ions at room temperature in the fluence range 2 * 10 15 et 6 * 10 16 cm -2 . Some of them have been pre-irradiated with self-ions (14 MeV Ti or Zr). Fully controlled thermal annealing tests were subsequently carried out in the temperature range 1000 - 1600 C for two hours. The evolution of the helium depth distribution in function of implantation dose, temperature and pre-irradiation dose was measured thanks to the deuteron-induced nuclear reaction 3 He(d, p 0 ) 4 He between 900 keV and 1.8 MeV. The microstructure of implanted and annealed samples was investigated by transmission electron microscopy on thin foils prepared using the FIB technique. Additional characterization tools, as X-ray diffraction and Raman microspectrometry, have been also applied in order to obtain complementary information. Among the most relevant results obtained, the following have to be outlined: - double-peak helium depth profile was measured on as implanted sample for the three compounds. The first peak is located near the end of range and includes the major part of helium, a second peak located close to the surface corresponds to the helium atoms trapped by the native vacancies; - the helium retention capacity in transition metal carbides and nitrides submitted to fully controlled thermal treatments varies according to ZrC 0.92 ≤ TiC 0.96 ≤ TiN 0.96 ; - whatever the investigated material, a self-ion-induced pre-damaging does not modify the initial helium profile extent. The influence of the post-implantation thermal treatment remains preponderant in any case; - the apparent diffusion coefficient of helium is in the range 4 * 10 -18 - 2 * 10 -17 m 2 s -1 in TiC0.96 and 3.5 * 10 -19 - 5.3 * 10 -18 m 2 s -1 in TiN 0.96 between

  15. Chemical characterization of 4140 steel implanted by nitrogen ions

    Energy Technology Data Exchange (ETDEWEB)

    Nino, Ely Dannier V.; Duran, Fernando [Grupo de Investigacion en Tecnologia del Plasma (GINTEP), Departamento de Ciencias Basicas, Universidad Pontificia Bolivariana, Bucaramanga (Colombia); Pinto, Jose L.C. [Grupo de Investigacion en Quimica Estructural (GIQUE), Universidad Industrial de Santander, Bucaramanga (Colombia); Dugar-Zhabon, V.; Garnica, Hernan [Grupo de Fisica y Tecnologia del Plasma (FITEK), Universidad Industrial de Santander, Bucaramanga (Colombia)

    2010-07-01

    AISI-SAE 4140 sample surfaces of different roughness which are implanted by nitrogen ions of 20 keV and 30 keV at a dose of 10{sup 17} ions/cm{sup 2} through a three dimensional ion implantation technique are studied. Crystal phases of nitrogen compositions of the implanted samples, obtained with help of an x-ray diffraction method, are confronted with the data reported by the International Centre for Diffraction Data (ICDD), PDF-2. It is observed that the implanted into the metal nitrogen atoms produce changes in orientation of crystal planes that is manifested as variations of the intensity of the refracted rays and of cell dimensions (a displacement of 2 theta of the maximum intensity position). An analysis for determining nitrogen atoms implanted by high-voltage pulsed discharges at low pressures in the crystal structure of the solid surface was carried out by X-Ray Diffraction due to this technique permits to assess the possibility of formation of new compounds. (author)

  16. Chemical characterization of 4140 steel implanted by nitrogen ions

    International Nuclear Information System (INIS)

    Nino, Ely Dannier V.; Duran, Fernando; Pinto, Jose L.C.; Dugar-Zhabon, V.; Garnica, Hernan

    2010-01-01

    AISI-SAE 4140 sample surfaces of different roughness which are implanted by nitrogen ions of 20 keV and 30 keV at a dose of 10"1"7 ions/cm"2 through a three dimensional ion implantation technique are studied. Crystal phases of nitrogen compositions of the implanted samples, obtained with help of an x-ray diffraction method, are confronted with the data reported by the International Centre for Diffraction Data (ICDD), PDF-2. It is observed that the implanted into the metal nitrogen atoms produce changes in orientation of crystal planes that is manifested as variations of the intensity of the refracted rays and of cell dimensions (a displacement of 2 theta of the maximum intensity position). An analysis for determining nitrogen atoms implanted by high-voltage pulsed discharges at low pressures in the crystal structure of the solid surface was carried out by X-Ray Diffraction due to this technique permits to assess the possibility of formation of new compounds. (author)

  17. Damage and in-situ annealing during ion implantation

    International Nuclear Information System (INIS)

    Sadana, D.K.; Washburn, J.; Byrne, P.F.; Cheung, N.W.

    1982-11-01

    Formation of amorphous (α) layers in Si during ion implantation in the energy range 100 keV-11 MeV and temperature range liquid nitrogen (LN)-100 0 C has been investigated. Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the α layer during RT implantation is attributed to in-situ annealing. Implantation to the same fluence at temperatures above 100 0 C does not produce α layers. To further investigate in situ annealing effects, specimens already containing buried α layers were further irradiated with ion beams in the temperature range RT-400 0 C. It was found that isolated small α zones (less than or equal to 50 diameter) embedded in the crystalline matrix near the two α/c interfaces dissolved into the crystal but the thickness of the 100 percent α layer was not appreciably affected by further implantation at 200 0 C. A model for in situ annealing during implantation is presented

  18. Investigation of mixed ion fields in the forward direction for 220.5 MeV/u helium ion beams: comparison between water and PMMA targets

    Science.gov (United States)

    Aricò, G.; Gehrke, T.; Jakubek, J.; Gallas, R.; Berke, S.; Jäkel, O.; Mairani, A.; Ferrari, A.; Martišíková, M.

    2017-10-01

    Currently there is a rising interest in helium ion beams for radiotherapy. For benchmarking of the physical beam models used in treatment planning, there is a need for experimental data on the composition and spatial distribution of mixed ion fields. Of particular interest are the attenuation of the primary helium ion fluence and the build-up of secondary hydrogen ions due to nuclear interactions. The aim of this work was to provide such data with an enhanced precision. Moreover, the validity and limits of the mixed ion field equivalence between water and PMMA targets were investigated. Experiments with a 220.5 MeV/u helium ion pencil beam were performed at the Heidelberg Ion-Beam Therapy Center in Germany. The compact detection system used for ion tracking and identification was solely based on Timepix position-sensitive semiconductor detectors. In comparison to standard techniques, this system is two orders of magnitude smaller, and provides higher precision and flexibility. The numbers of outgoing helium and hydrogen ions per primary helium ion as well as the lateral particle distributions were quantitatively investigated in the forward direction behind water and PMMA targets with 5.2-18 cm water equivalent thickness (WET). Comparing water and PMMA targets with the same WET, we found that significant differences in the amount of outgoing helium and hydrogen ions and in the lateral particle distributions arise for target thicknesses above 10 cm WET. The experimental results concerning hydrogen ions emerging from the targets were reproduced reasonably well by Monte Carlo simulations using the FLUKA code. Concerning the amount of outgoing helium ions, significant differences of 3-15% were found between experiments and simulations. We conclude that if PMMA is used in place of water in dosimetry, differences in the dose distributions could arise close to the edges of the field, in particular for deep seated targets. The results presented in this publication are

  19. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He+ ion implantation

    International Nuclear Information System (INIS)

    Yang kang; Ma Mingwang; Chen Xiliang; Zhu Zhiyong

    2009-01-01

    The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials), and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA), we irradiated the (100)-oriented, low-temperature (LT) grown GaAs substrate with 10 16 /cm 2 of 2 MeV helium ions. After being implanted, electric resistance of the PCA has increased from 800 Ω to 60 ΜΩ. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly, its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement. (authors)

  20. Connection experiments with a hollow cathode ion source and a helium gas jet system for on-line isotope separation

    International Nuclear Information System (INIS)

    Mazumdar, A.K.; Wagner, H.; Walcher, W.; Lund, T.

    1976-01-01

    A helium jet system was connected to a hollow cathode ion source. Using fission products the efficiencies of the different steps were measured by β-, X-ray and γ-counting while the mass spectrum and the focussing of the extracted ion beam were observed with a small deflecting magnet. Mean transport efficiencies of 50% through the 12 m capillary were obtained and ion source efficiencies in the percent range for several elements. (Auth.)

  1. Materials science issues of plasma source ion implantation

    International Nuclear Information System (INIS)

    Nastasi, M.; Faehl, R.J.; Elmoursi, A.A.

    1996-01-01

    Ion beam processing, including ion implantation and ion beam assisted deposition (IBAD), are established surface modification techniques which have been used successfully to synthesize materials for a wide variety of tribological applications. In spite of the flexibility and promise of the technique, ion beam processing has been considered too expensive for mass production applications. However, an emerging technology, Plasma Source Ion Implantation (PSII), has the potential of overcoming these limitations to become an economically viable tool for mass industrial applications. In PSII, targets are placed directly in a plasma and then pulsed-biased to produce a non-line-of-sight process for intricate target geometries without complicated fixturing. If the bias is a relatively high negative potential (20--100 kV) ion implantation will result. At lower voltages (50--1,200 V), deposition occurs. Potential applications for PSII are in low-value-added products such as tools used in manufacturing, orthopedic devices, and the production of wear coatings for hard disk media. This paper will focus on the technology and materials science associated with PSII

  2. Channeled-ion implantation of group-III and group-V ions into silicon

    International Nuclear Information System (INIS)

    Furuya, T.; Nishi, H.; Inada, T.; Sakurai, T.

    1978-01-01

    Implantation of group-III and group-V ions along [111] and [110] axes of silicon have been performed using a backscattering technique, and the depth profiles of implanted ions have been measured by the C-V method. The range of channeled Ga ions is the largest among the present data, and a p-type layer of about 6 μm is obtained by implantation at only 150 keV. The carrier profiles of channeled Al and Ga ions with deep ranges do not show any distinguishable channeled peak contrasting with the B, P, and As channeling which gives a well-defined peak. The electronic stopping cross section (S/sub e/) of channeled P ions agree well with the results of Eisen and Reddi, but in B channeling, the discrepancies of 10--20% are observed among S/sub e/ values obtained experimentally by three different groups

  3. Radiation blistering in Inconel-625 due to 100 KeV helium ion irradiation

    International Nuclear Information System (INIS)

    Whitton, J.L.; Rao, A.S.; Kaminsky, M.

    1988-01-01

    The objective of this study was to determine whether the change of angle of incidence of an ion beam impinging on surface blisters during their growth phase (before exfoliation) could influence the blister skin thickness and the blister crater depth. Polished, polycrystalline Inconel-625 samples were irradiated at room temperature and at normal incidence to the major sample surface with 100 keV helium ions to a total dose of 6.24x10 18 ions/cm 2 . The results revealed that many exfoliated blisters leave craters which have two or three concentric pits. The blister skin thickness near the center of the blister was found to agree well with the calculated projected range of 100 keV He ions in nickel. However, the blister skin thickness of some exfoliated blisters along the edge of the fracture surface showed different thicknesses. A model is proposed to explain the observed blister crater/blister fracture features in terms of a change of angle of incidence of the incident ions to the surface during the growth phase of surface blisters. (orig.)

  4. Defect-impurity interactions in ion-implanted metals

    International Nuclear Information System (INIS)

    Turos, A.

    1986-01-01

    An overview of defect-impurity interactions in metals is presented. When point defects become mobile they migrate towards the sinks and on the way can be captured by impurity atoms forming stable associations so-called complexes. In some metallic systems complexes can also be formed athermally during ion implantation by trapping point defects already in the collision cascade. An association of a point defect with an impurity atom leads to its displacement from the lattice site. The structure and stability of complexes are strongly temperature dependent. With increasing temperature they dissociate or grow by multiple defect trapping. The appearance of freely migrating point defects at elevated temperatures, due to ion bombardment or thermal annealing, causes via coupling with defect fluxes, important impurity redistribution. Because of the sensitivity of many metal-in-metal implanted systems to radiation damage the understanding of this processes is essential for a proper interpretation of the lattice occupancy measurements and the optimization of implantation conditions. (author)

  5. Plasma effects for heavy ions in implanted silicon detectors

    International Nuclear Information System (INIS)

    Aiello, S.; Anzalone, A.; Campisi, M.G.; Cardella, G.; Cavallaro, Sl.; Filippo, E. De; Geraci, E.; Geraci, M.; Guazzoni, P.; Manno, M.C. Iacono; Lanzalone, G.; Lanzano, G.; Nigro, S. Lo; Pagano, A.; Papa, M.; Pirrone, S.; Politi, G.; Porto, F.; Rizzo, F.; Sambataro, S.; Sperduto, M.L.; Sutera, C.; Zetta, L.

    1999-01-01

    Plasma effects for heavy ions in implanted silicon detectors have been investigated for different detector characteristics as a function of type and energy of the detected particles. A new approach is presented and used to reproduce the effect of the plasma delay in the timing performances. The results are in good agreement with the present data and with previous measurements found in the literature

  6. Buried injector logic, a vertical IIL using deep ion implantation

    NARCIS (Netherlands)

    Mouthaan, A.J.

    1987-01-01

    A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is

  7. Vacancy supersaturations produced by high-energy ion implantation

    International Nuclear Information System (INIS)

    Venezia, V.C.; Eaglesham, D.J.; Jacobson, D.C.; Gossmann, H.J.

    1998-01-01

    A new technique for detecting the vacancy clusters produced by high-energy ion implantation into silicon is proposed and tested. This technique takes advantage of the fact that metal impurities, such as Au, are gettered near one-half of the projected range (1/2 R p ) of MeV implants. The vacancy clustered region produced by a 2 MeV Si + implant into silicon has been labeled with Au diffused in from the front surface. The trapped Au was detected by Rutherford backscattering spectrometry (RBS) to profile the vacancy clusters. Cross section transmission electron microscopy (XTEM) analysis shows that the Au in the region of vacancy clusters is in the form of precipitates. By annealing MeV implanted samples prior to introduction of the Au, changes in the defect concentration within the vacancy clustered region were monitored as a function of annealing conditions

  8. Very broad beam metal ion source for large area ion implantation application

    International Nuclear Information System (INIS)

    Brown, I.; Anders, S.; Dickinson, M.R.; MacGill, R.A.; Yao, X.

    1993-01-01

    The authors have made and operated a very broad beam version of vacuum arc ion source and used it to carry out high energy metal ion implantation of a particularly large substrate. A multiple-cathode vacuum arc plasma source was coupled to a 50 cm diameter beam extractor (multiple aperture, accel-decel configuration) operated at a net extraction voltage of up to 50 kV. The metal ion species chosen were Ni and Ta. The mean ion charge state for Ni and Ta vacuum arc plasmas is 1.8 and 2.9, respectively, and so the mean ion energies were up to about 90 and 145 keV, respectively. The ion source was operated in a repetitively pulsed mode with pulse length 250 μs and repetition rate several pulses per second. The extracted beam had a gaussian profile with FWHM about 35 cm, giving a nominal beam area of about 1,000 cm 2 . The current of Ni or Ta metal ions in the beam was up to several amperes. The targets for the ion implantation were a number of 24-inch long, highly polished Cu rails from an electromagnetic rail gun. The rails were located about 80 cm away from the ion source extractor grids, and were moved across a diameter of the vessel in such a way as to maximize the uniformity of the implant along the rail. The saturation retained dose for Ta was limited to about 4 x 10 16 cm -2 because of the rather severe sputtering, in accordance with the theoretical expectations for these implantation conditions. Here they describe the ion source, the implantation procedure, and the kinds of implants that can be produced in this way

  9. Biological effect of nitrogen ion implantation on stevia

    International Nuclear Information System (INIS)

    Wang Cailian; Shen Mei; Chen Qiufang; Shu Shizhen

    1997-10-01

    Dry seed of stevia were implanted by 35∼150 keV nitrogen ions with various doses. The biological effect in M 1 was studied. The results showed that nitrogen ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with ion beam energy and dose added, but there was on significant linear regression relationship between ion dose and aberration rate. The results indicated the seedling height reduced with the increasing of dose for ion beam. The biological effect of nitrogen ion beam on M 1 stevia was lower than that of γ-rays. (6 refs., 1 fig., 4 tabs.)

  10. Absolute charge-changing cross sections for fast helium ions-C sub 6 sub 0 collisions

    CERN Document Server

    Nose, K; Shiraishi, K; Keizaki, T; Itoh, A

    2003-01-01

    Absolute charge-changing cross sections for fast helium ions passing through a C sub 6 sub 0 gas target have been measured. The measurements were carried out for incident projectile energies at 1.0MeV and 1.5MeV. The measured cross sections are compared with calculated values from Bohr-Lindhard model and Bohr model. In addition, we have obtained equilibrium charge state fractions and average equilibrium charge of helium ions passing through C sub 6 sub 0 , by using the measured cross sections.

  11. Ion implantation and annealing studies in III-V nitrides

    International Nuclear Information System (INIS)

    Zolper, J.C.; Pearton, S.J.

    1996-01-01

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

  12. Tribological studies of ion-implanted steel constituents

    International Nuclear Information System (INIS)

    Wei, Ronghau.

    1990-01-01

    Tribological properties of ion-implanted ferrite and austenite were studied systematically using a unique oscillating pin-on-disc wear tester. Results show that nitrogen implantation at elevated temperatures to high doses dramatically improves the adhesive wear resistance of ferrite and the critical load at which the adhesive wear mechanism changes from mild to severe for austenite. The wear resistance of nitrogen-implanted ferrite is determined by the nitride formed. Extremely hard solid solutions of nitrogen develop on the implanted austenite surfaces and induce three orders of magnitude reductions in wear rates. The implantation conditions that should be used to produce deep, wear-resistant layers for both steels are discussed in detail. Oscillating pin-on-disc wear tests demonstrate that nitrogen does not diffuse during the wearing process although tests conducted using conventional fixed pin-on-disc test equipment could erroneously suggest this occurs. Taken together, the results show that high-dose-rate implantation at low energies yields very-high-quality implanted surfaces at low cost

  13. Ion implantation planar in targets with semi-cylindrical grooves

    International Nuclear Information System (INIS)

    Filiz, Y.; Demokan, O.

    2002-01-01

    The experimental and numerical investigations suggest that the ion-matrix phase of the sheath evolution plays a crucial role in determining the ion flux to the target surfaces . It can easily be realized that conformal mapping of the target's surface by the sheath is questionable, or even inapplicable in the case of surfaces with fine irregularities or this continuities. The theoretical analysis of such cases is evidently quite complicated. On the other hand, most actual targets fall into this category, and hence, the understanding of the corresponding sheath behavior remains vital for accomplishing uniform implantation. The ion- matrix sheaths have been treated analytically by Conrad for planar, cylindrical and spherical targets successfully. Similar y, Sheridan and Zang et al. have investigated the ion matrix sheath in cylindrical bores, without and with axial electrodes, respectively. All these works assumed targets with infinite areas or length, Zeng et al. and Kwok et al. have started studying implantation into grooves, by carrying out simulations for the inner and outer races of bearings, which are modeled as semi- cylinders of infinite length. Finally, Demokan has presented the first analytic treatment of on matrix sheaths in two- dimensions, by considering targets with rectangular grooves of infinite length, representing a broad range of industrial items. In this work, ion-matrix sheath near infinite length are theoretically analysed. Understanding the sheath formation near such targets is essential for achieving successful ion implantation on the surfaces of a broad range of industrial products, including all types of bearings. The potential profiles both inside and outside the groove are derived and the consequent ion velocity higher plasma densities may improve the uniformity of implantation on the surfaces of such grooves. Furthermore, the sheath edge deformation due to the grooves, the variation of the angle of incidence on the surface of the groove

  14. Helium abundance and speed difference between helium ions and protons in the solar wind from coronal holes, active regions, and quiet Sun

    Science.gov (United States)

    Fu, Hui; Madjarska, M. S.; Li, Bo; Xia, LiDong; Huang, ZhengHua

    2018-05-01

    Two main models have been developed to explain the mechanisms of release, heating and acceleration of the nascent solar wind, the wave-turbulence-driven (WTD) models and reconnection-loop-opening (RLO) models, in which the plasma release processes are fundamentally different. Given that the statistical observational properties of helium ions produced in magnetically diverse solar regions could provide valuable information for the solar wind modelling, we examine the statistical properties of the helium abundance (AHe) and the speed difference between helium ions and protons (vαp) for coronal holes (CHs), active regions (ARs) and the quiet Sun (QS). We find bimodal distributions in the space of AHeand vαp/vA(where vA is the local Alfvén speed) for the solar wind as a whole. The CH wind measurements are concentrated at higher AHeand vαp/vAvalues with a smaller AHedistribution range, while the AR and QS wind is associated with lower AHeand vαp/vA, and a larger AHedistribution range. The magnetic diversity of the source regions and the physical processes related to it are possibly responsible for the different properties of AHeand vαp/vA. The statistical results suggest that the two solar wind generation mechanisms, WTD and RLO, work in parallel in all solar wind source regions. In CH regions WTD plays a major role, whereas the RLO mechanism is more important in AR and QS.

  15. Recent advances in ion implantation. A state of the art review

    International Nuclear Information System (INIS)

    Stone, J.L.; Plunkett, J.C.

    1976-01-01

    The latest advances in ion implantation related to MOS, CMOS, CCDS, I 2 L, and other semiconductor devices are discussed. In addition, the application of ion implantation to superconductivity, integrated optics, compound semiconductors, and magnetic bubbles is considered. The requirements of ion implantation machine technology to fulfill the needs of the production environment are also reviewed. 75 refs

  16. EPDM Rubber Modified by Nitrogen Plasma Immersion Ion Implantation.

    Science.gov (United States)

    Kondyurin, Alexey

    2018-04-24

    Ethylene-propylene diene monomer rubber (EPDM) was treated by plasma immersion ion implantation (PIII) with nitrogen ions of 20 keV energy and fluence from 10 13 to 10 16 ions/cm². The Fourier-transform infrared attenuated total reflection spectra, atomic force microscopy and optical microscopy showed significant structure changes of the surface. The analysis of an interface of PIII treated EPDM rubber with polyurethane binder showed a cohesive character of the adhesion joint fracture at the presence of solvent and interpreted as covalent bond network formation between the PIII treated rubber and the adhesive.

  17. EPDM Rubber Modified by Nitrogen Plasma Immersion Ion Implantation

    Directory of Open Access Journals (Sweden)

    Alexey Kondyurin

    2018-04-01

    Full Text Available Ethylene-propylene diene monomer rubber (EPDM was treated by plasma immersion ion implantation (PIII with nitrogen ions of 20 keV energy and fluence from 1013 to 1016 ions/cm2. The Fourier-transform infrared attenuated total reflection spectra, atomic force microscopy and optical microscopy showed significant structure changes of the surface. The analysis of an interface of PIII treated EPDM rubber with polyurethane binder showed a cohesive character of the adhesion joint fracture at the presence of solvent and interpreted as covalent bond network formation between the PIII treated rubber and the adhesive.

  18. Cooperative emission in ion implanted Yb:YAG waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, G V; Desirena, H; De la Rosa, E [Centro de Investigaciones en Optica, Loma del Bosque 115, Lomas del Campestre, 37150 Leon, Guanajuato (Mexico); Flores-Romero, E; Rickards, J; Trejo-Luna, R [Instituto de Fisica, UNAM, Apartado Postal 20364, 01000 Mexico, D. F. (Mexico); Marquez, H, E-mail: gvvazquez@cio.mx [Departamento de Optica, CICESE, Km 107 Carr. Tijuana-Ensenada, 22860 Ensenada, B. C. (Mexico)

    2011-01-01

    In this work, we report the analysis of spectroscopic properties of waveguides fabricated by ion implantation in YAG doped with Yb{sup 3+} ions. Three emission bands were detected in the blue, green and red regions under 970-nm excitation. The strong blue-green emission can be explained by a cooperative process between ytterbium ion pairs, leading to emission centered at 514 nm. The additional blue bands as well as green and red emission bands are attributed to the presence of Tm{sup 3+} and Er{sup 3+} traces. The results include absorption and emission curves as well as decay time rates.

  19. Cooperative emission in ion implanted Yb:YAG waveguides

    International Nuclear Information System (INIS)

    Vazquez, G V; Desirena, H; De la Rosa, E; Flores-Romero, E; Rickards, J; Trejo-Luna, R; Marquez, H

    2011-01-01

    In this work, we report the analysis of spectroscopic properties of waveguides fabricated by ion implantation in YAG doped with Yb 3+ ions. Three emission bands were detected in the blue, green and red regions under 970-nm excitation. The strong blue-green emission can be explained by a cooperative process between ytterbium ion pairs, leading to emission centered at 514 nm. The additional blue bands as well as green and red emission bands are attributed to the presence of Tm 3+ and Er 3+ traces. The results include absorption and emission curves as well as decay time rates.

  20. Magnetoresistive nanojunctions fabricated via focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Stefanescu, E.; Hong, J.; Guduru, R. [Florida International University (United States); Lavrenov, A. [Hitachi Research (United States); Litvinov, D. [University of Houston, Center for Nanomagnetic Systems (United States); Khizroev, S., E-mail: khizroev@fiu.edu [Florida International University (United States)

    2013-01-15

    Focused ion beam (FIB) is used to implant Ga{sup +} ions into a 30-nm thick magnetoresistive element to effectively reduce the track width of the sensor from 1 Micro-Sign m to {approx}80 nm. Through magnetic recording industry-standard spinstand measurements, it is confirmed that a dose of {approx}10{sup 3} ions/cm{sup 2} at a 1-pA FIB current is sufficient to fully 'de-activate' magnetism in the exposed side regions. To record tracks required for spinstand tests, a FIB-trimmed ring type write head is used.

  1. Broad-beam, high current, metal ion implantation facility

    International Nuclear Information System (INIS)

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

    1990-07-01

    We have developed a high current metal ion implantation facility with which high current beams of virtually all the solid metals of the Periodic Table can be produced. The facility makes use of a metal vapor vacuum arc ion source which is operated in a pulsed mode, with pulse width 0.25 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion charge state multiplicity; beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we describe the facility and some of the implants that have been carried out using it, including the 'seeding' of silicon wafers prior to CVD with titanium, palladium or tungsten, the formation of buried iridium silicide layers, and actinide (uranium and thorium) doping of III-V compounds. 16 refs., 6 figs

  2. Methods for obtaining a uniform volume concentration of implanted ions

    International Nuclear Information System (INIS)

    Reutov, V.F.

    1995-01-01

    Three simple practical methods of irradiations with high energy particles providing the conditions for obtaining a uniform volume concentration of the implanted ions in the massive samples are described in the present paper. Realization of the condition of two-sided irradiation of a plane sample during its rotation in the flux of the projectiles is the basis of the first method. The use of free air as a filter with varying absorbent ability due to movement of the irradiated sample along ion beam brought to the atmosphere is at the basis of the second method of uniform ion alloying. The third method for obtaining a uniform volume concentration of the implanted ions in a massive sample consists of irradiation of a sample through the absorbent filter in the shape of a foil curved according to the parabolic law moving along its surface. The first method is the most effective for obtaining a great number of the samples, for example, for mechanical tests, the second one - for irradiation in different gaseous media, and the third one - for obtaining high concentrations of the implanted ions under controlled (regulated) thermal and deformation conditions. 2 refs., 7 figs

  3. Negative-ion current density dependence of the surface potential of insulated electrode during negative-ion implantation

    International Nuclear Information System (INIS)

    Tsuji, Hiroshi; Okayama, Yoshio; Toyota, Yoshitaka; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kouji.

    1994-01-01

    Positive ion implantation has been utilized as the method of impurity injection in ultra-LSI production, but the problem of substrate charging cannot be resolved by conventional charge compensation method. It was forecast that by negative ion implantation, this charging problem can be resolved. Recently the experiment on the negative ion implantation into insulated electrodes was carried out, and the effect of negative ion implantation to this problem was proved. However, the dependence of charged potential on the increase of negative ion current at the time of negative ion implantation is a serious problem in large current negative ion implantation hereafter. The charged potential of insulated conductor substrates was measured by the negative ion implantation using the current up to several mA/cm 2 . The experimental method is explained. Medium current density and high current density negative ion implantation and charged potential are reported. Accordingly in negative ion implantation, if current density is optimized, the negative ion implantation without charging can be realized. (K.I.)

  4. RBE of heavy ions (carbon, neon, helium, proton) for acute cell death of pancreatic islet cells

    International Nuclear Information System (INIS)

    Tsubouchi, Susumu; Fukutsu, Kumiko; Itsukaichi, Hiromi

    2003-01-01

    At this fiscal year, only two times irradiation experiments with neon and helium beams were performed to obtain relative biological effectiveness (RBE) of heavy ions (carbon, neon, helium, proton) for acute cell death of pancreatic islet cells in vivo. First of all this project was designed to obtain RBE of 290 MeV carbon and 400 MeV neon beams in the high linear energy transfer (LET) region for acute cell death of pancreatic islets of golden hamster (Mesocricetus auratus) in the condition of in both in vivo and in vitro systems. As mentioned in previous report, in vitro system, however, resulted in ill success. This in vitro experiment was tentatively shelved for the time being. In return in vivo experiments for low LET region of neon beams (32.5 KeV/u), carbon beams (15.0 KeV/u) and helium beams (2 KeV/u) were performed in these two years. Last year these results together with those previously obtained for 200 KeV X-ray, 70 MeV proton, 290 MeV carbon (60 KeV/u), and neon (100 KeV/u) beams were reconsidered. At this year dose response relations (25, 50, 100, 150, and 200 Gy respectively) in acute cell death of pancreatic islets studied histologically after whole body irradiation of 3 weeks young male golden hamster with lower LET helium beams (2 KeV/u) and neon beams (32.5 KeV/u). Results indicated that mean cell lethal dose (Do) of helium beams (2 KeV/u) and neon beams (32.5 KeV/u) were 38 Gy and 49 Gy, respectively. Previously obtained Do data for 200 KeV x-ray, 70 MeV proton, 290 MeV carbon (15 KeV/u), 400 MeV neon (32.5 KeV/u), 290 MeV carbon (60 KeV/u), and 400 MeV neon (100 KeV/u) beams were 37 Gy, 38 Gy, 38 Gy, 49 Gy, 75 Gy, and 200 Gy, respectively. From these data estimated RBE of neon (100 KeV/u and 32.5 KeV/u), carbon (60 KeV/u and 15.0 KeV/u), 70 MeV proton and 150 MeV helium (2 KeV/u) beams were 0.19, 0.76, 0.49, 0.97, 0.97, 0.97, respectively. Therefore the order of RBE (or radiosensitivities) of islets cells with these various heavy ion beams was

  5. Upgraded vacuum arc ion source for metal ion implantation

    International Nuclear Information System (INIS)

    Nikolaev, A. G.; Oks, E. M.; Savkin, K. P.; Yushkov, G. Yu.; Brown, I. G.

    2012-01-01

    Vacuum arc ion sources have been made and used by a large number of research groups around the world over the past twenty years. The first generation of vacuum arc ion sources (dubbed ''Mevva,'' for metal vapor vacuum arc) was developed at Lawrence Berkeley National Laboratory in the 1980s. This paper considers the design, performance parameters, and some applications of a new modified version of this kind of source which we have called Mevva-V.Ru. The source produces broad beams of metal ions at an extraction voltage of up to 60 kV and a time-averaged ion beam current in the milliampere range. Here, we describe the Mevva-V.Ru vacuum arc ion source that we have developed at Tomsk and summarize its beam characteristics along with some of the applications to which we have put it. We also describe the source performance using compound cathodes.

  6. Detection and reduction of tungsten contamination in ion implantation processes

    International Nuclear Information System (INIS)

    Polignano, M.L.; Galbiati, A.; Grasso, S.; Mica, I.; Barbarossa, F.; Magni, D.

    2016-01-01

    In this paper, we review the results of some studies addressing the problem of tungsten contamination in implantation processes. For some tests, the implanter was contaminated by implantation of wafers with an exposed tungsten layer, resulting in critical contamination conditions. First, DLTS (deep level transient spectroscopy) measurements were calibrated to measure tungsten contamination in ion-implanted samples. DLTS measurements of tungsten-implanted samples showed that the tungsten concentration increases linearly with the dose up to a rather low dose (5 x 10 10 cm -2 ). Tungsten deactivation was observed when the dose was further increased. Under these conditions, ToF-SIMS revealed tungsten at the wafer surface, showing that deactivation was due to surface segregation. DLTS calibration could therefore be obtained in the linear dose regime only. This calibration was used to evaluate the tungsten contamination in arsenic implantations. Ordinary operating conditions and critical contamination conditions of the equipment were compared. A moderate tungsten contamination was observed in samples implanted under ordinary operating conditions. This contamination was easily suppressed by a thin screen oxide. On the contrary, implantations in critical conditions of the equipment resulted in a relevant tungsten contamination, which could be reduced but not suppressed even by a relatively thick screen oxide (up to 150 Aa). A decontamination process consisting of high dose implantations of dummy wafers was tested for its efficiency to remove tungsten and titanium contamination. This process was found to be much more effective for titanium than for tungsten. Finally, DLTS proved to be much more sensitive that TXRF (total reflection X-ray fluorescence) in detecting tungsten contamination. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Detection and reduction of tungsten contamination in ion implantation processes

    Energy Technology Data Exchange (ETDEWEB)

    Polignano, M.L.; Galbiati, A.; Grasso, S.; Mica, I.; Barbarossa, F.; Magni, D. [STMicroelectronics, Agrate Brianza (Italy)

    2016-12-15

    In this paper, we review the results of some studies addressing the problem of tungsten contamination in implantation processes. For some tests, the implanter was contaminated by implantation of wafers with an exposed tungsten layer, resulting in critical contamination conditions. First, DLTS (deep level transient spectroscopy) measurements were calibrated to measure tungsten contamination in ion-implanted samples. DLTS measurements of tungsten-implanted samples showed that the tungsten concentration increases linearly with the dose up to a rather low dose (5 x 10{sup 10} cm{sup -2}). Tungsten deactivation was observed when the dose was further increased. Under these conditions, ToF-SIMS revealed tungsten at the wafer surface, showing that deactivation was due to surface segregation. DLTS calibration could therefore be obtained in the linear dose regime only. This calibration was used to evaluate the tungsten contamination in arsenic implantations. Ordinary operating conditions and critical contamination conditions of the equipment were compared. A moderate tungsten contamination was observed in samples implanted under ordinary operating conditions. This contamination was easily suppressed by a thin screen oxide. On the contrary, implantations in critical conditions of the equipment resulted in a relevant tungsten contamination, which could be reduced but not suppressed even by a relatively thick screen oxide (up to 150 Aa). A decontamination process consisting of high dose implantations of dummy wafers was tested for its efficiency to remove tungsten and titanium contamination. This process was found to be much more effective for titanium than for tungsten. Finally, DLTS proved to be much more sensitive that TXRF (total reflection X-ray fluorescence) in detecting tungsten contamination. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Copper ion implantation of polycarbonate matrices: Morphological and structural properties

    Energy Technology Data Exchange (ETDEWEB)

    Resta, V., E-mail: vincenzo.resta@le.infn.it; Quarta, G.; Maruccio, L.; Calcagnile, L.

    2014-07-15

    The implantation of 1 MeV {sup 63}Cu{sup +} ions in polycarbonate (PC) matrices has been carried out in order to evaluate the morphological and structural modifications induced in the polymer as a function of the ion fluence in the range 5 × 10{sup 13} ions cm{sup −2} to 1 × 10{sup 17} ions cm{sup −2}. Atomic Force Microscopy analysis reveals a significant roughness increase of the polymer surface only for fluences higher than 5 × 10{sup 16} ions cm{sup −2} with the presence of hillock structures which surface density increases with increasing the ion fluence. X-ray Diffraction measurements of PC implanted with fluences in the range between 5 × 10{sup 15} at cm{sup −2} and 5 × 10{sup 16} at cm{sup −2} reveal an increase of the disorder inside the PC matrix, as a consequence of the damaging process induced by the ion irradiation. Evidences about the presence of exotic phase structures ascribed to both cubic Cu{sub 2}O and cubic Cu have been found.

  9. Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Kai; Wang, Yibo [Shanghai Key laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Li, Zhuguo, E-mail: lizg@sjtu.edu.cn [Shanghai Key laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

    2015-08-15

    Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enriched region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.

  10. Lithium ion implantation effects in MgO(100)

    Energy Technology Data Exchange (ETDEWEB)

    Huis, M.A. van; Fedorov, A.V.; Veen, A. van; Labohm, F.; Schut, H.; Mijnarends, P.E. [Interfaculty Reactor Inst., Delft Univ. of Technology, Delft (Netherlands); Kooi, B.J.; Hosson, J.T.M. de [Rijksuniversiteit Groningen (Netherlands). Materials Science Centre

    2001-07-01

    Single crystals of MgO(100) were implanted with 10{sup 16} {sup 6}Li ions cm{sup -2} at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical absorption spectroscopy and depth-sensitive Doppler Broadening positron beam analysis (PBA). A strong increase in the S-parameter is observed in the implantation layer at a depth of approximately 100 nm. The high value of the S-parameter is ascribed to positron annihilation in small lithium precipitates. The results of 2D-ACAR and X-TEM analysis show evidence of the presence of lithium precipitates. The depth distribution of the implanted {sup 6}Li atoms was monitored with neutron depth profiling (NDP). It was observed that detrapping and diffusion of {sup 6}Li starts at an annealing temperature of 1200K. (orig.)

  11. The compaction of fused silica resulting from ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, C.M.; Ridgway, M.C. [Australian National Univ., Canberra, ACT (Australia); Leech, P.L. [Telstra Research Laboratories, Clayton, Victoria (Australia)

    1996-12-31

    Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

  12. The compaction of fused silica resulting from ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, C M; Ridgway, M C [Australian National Univ., Canberra, ACT (Australia); Leech, P L [Telstra Research Laboratories, Clayton, Victoria (Australia)

    1997-12-31

    Ion implantation of fused silica results in compaction and consequently an increase in refractive index. This method of modifying the near-surface region has been shown as a potential means for fabricating single mode channel waveguides. This study has measured the compaction of the implanted regions for Si implantations as a function of dose (2x10{sup 12} - 6x10{sup l6} ions/cm{sup 2}), energy (1-9 MeV) and post-implantation annealing temperature (200-900 degree C). For a given energy, a dose-dependence of the step height (depth of compacted region) is observed for doses less than {approx}10{sup 15} ions/cm{sup 2}. At higher doses the step height saturates. For a given dose, a linear trend is evident for the step height as a function of energy suggesting that the major mechanism for this compaction is electronic stopping. As the annealing temperature increases, the step height gradually decreases from {approx}0.1-0.2 {mu} to -10-20% of the original value. From the annealing data, it is possible to extract an activation energy of 0.08 eV associated with the thermal removal of the compacted region. 4 refs., 4 figs.

  13. N and Cr ion implantation of natural ruby surfaces and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Rao, K. Sudheendra; Sahoo, Rakesh K.; Dash, Tapan [CSIR-Institute of Minerals and Materials Technology, Bhubaneswar 751013 (India); Magudapathy, P.; Panigrahi, B.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Nayak, B.B.; Mishra, B.K. [CSIR-Institute of Minerals and Materials Technology, Bhubaneswar 751013 (India)

    2016-04-15

    Highlights: • Cr and N ion implantation on natural rubies of low aesthetic quality. • Cr-ion implantation improves colour tone from red to deep red (pigeon eye red). • N-ion implantation at fluence of 3 × 10{sup 17} causes blue coloration on surface. • Certain extent of amorphization is observed in the case of N-ion implantation. - Abstract: Energetic ions of N and Cr were used to implant the surfaces of natural rubies (low aesthetic quality). Surface colours of the specimens were found to change after ion implantation. The samples without and with ion implantation were characterized by diffuse reflectance spectra in ultra violet and visible region (DRS-UV–Vis), field emission scanning electron microscopy (FESEM), selected area electron diffraction (SAED) and nano-indentation. While the Cr-ion implantation produced deep red surface colour (pigeon eye red) in polished raw sample (without heat treatment), the N-ion implantation produced a mixed tone of dark blue, greenish blue and violet surface colour in the heat treated sample. In the case of heat treated sample at 3 × 10{sup 17} N-ions/cm{sup 2} fluence, formation of colour centres (F{sup +}, F{sub 2}, F{sub 2}{sup +} and F{sub 2}{sup 2+}) by ion implantation process is attributed to explain the development of the modified surface colours. Certain degree of surface amorphization was observed to be associated with the above N-ion implantation.

  14. Industrial hygiene and control technology assessment of ion implantation operations

    International Nuclear Information System (INIS)

    Ungers, L.J.; Jones, J.H.

    1986-01-01

    Ion implantation is a process used to create the functional units (pn junctions) of integrated circuits, photovoltaic (solar) cells and other semiconductor devices. During the process, ions of an impurity or a dopant material are created, accelerated and imbedded in wafers of silicon. Workers responsible for implantation equipment are believed to be at risk from exposure to both chemical (dopant compounds) and physical (ionizing radiation) agents. In an effort to characterize the chemical exposures, monitoring for chemical hazards was conducted near eleven ion implanters at three integrated circuit facilities, while ionizing radiation was monitored near four of these units at two of the facilities. The workplace monitoring suggests that ion implantation operators routinely are exposed to low-level concentrations of dopants. Although the exact nature of dopant compounds released to the work environment was not determined, area and personal samples taken during normal operating activities found concentrations of arsenic, boron and phosphorous below OSHA Permissible Exposure Limits (PELs) for related compounds; area samples collected during implanter maintenance activities suggest that a potential exists for more serious exposures. The results of badge dosimetry monitoring for ionizing radiation indicate that serious exposures are unlikely to occur while engineering controls remain intact. All emissions were detected at levels unlikely to result in exposures above the OSHA standard for the whole body (1.25 rems per calendar quarter). The success of existing controls in preventing worker exposures is discussed. Particular emphasis is given to the differential exposures likely to be experienced by operators and maintenance personnel.(ABSTRACT TRUNCATED AT 250 WORDS)

  15. Ion implantation and diamond-like coatings of aluminum alloys

    Science.gov (United States)

    Malaczynski, G. W.; Hamdi, A. H.; Elmoursi, A. A.; Qiu, X.

    1997-04-01

    In an attempt to increase the wear resistance of some key automotive components, General Motors Research and Development Center initiated a study to determine the potential of surface modification as a means of improving the tribological properties of automotive parts, and to investigate the feasibility of mass producing such parts. This paper describes the plasma immersion ion implantation system that was designed for the study of various options for surface treatment, and it discusses bench testing procedures used for evaluating the surface-treated samples. In particular, both tribological and microstructural analyses are discussed for nitrogen implants and diamond-like hydrocarbon coatings of some aluminum alloys.

  16. Monitoring Ion Implantation Energy Using Non-contact Characterization Methods

    Science.gov (United States)

    Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

    2011-01-01

    State-of-the-art ultra-shallow junctions are produced using extremely low ion implant energies, down to the range of 1-3 keV. This can be achieved by a variety of production techniques; however there is a significant risk that the actual implantation energy differs from the desired value. To detect this, sensitive measurement methods need to be utilized. Experiments show that both Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are suitable for this purpose.

  17. The detection of He in tungsten following ion implantation by laser-induced breakdown spectroscopy

    Science.gov (United States)

    Shaw, G.; Bannister, M.; Biewer, T. M.; Martin, M. Z.; Meyer, F.; Wirth, B. D.

    2018-01-01

    Laser-induced breakdown spectroscopy (LIBS) results are presented that provide depth-resolved identification of He implanted in polycrystalline tungsten (PC-W) targets by a 200 keV He+ ion beam, with a surface temperature of approximately 900 °C and a peak fluence of 1023 m-2. He retention, and the influence of He on deuterium and tritium recycling, permeation, and retention in PC-W plasma facing components are important questions for the divertor and plasma facing components in a fusion reactor, yet are difficult to quantify. The purpose of this work is to demonstrate the ability of LIBS to identify helium in tungsten; to investigate the sensitivity of laser parameters including, laser energy and gate delay, that directly influence the sensitivity and depth resolution of LIBS; and to perform a proof-of-principle experiment using LIBS to measure relative He intensities as a function of depth. The results presented demonstrate the potential not only to identify helium but also to develop a methodology to quantify gaseous impurity concentration in PC-W as a function of depth.

  18. Investigation of hydrogen micro-kinetics in metals with ion beam implantation and analysis

    International Nuclear Information System (INIS)

    Wang, T.S.; Peng, H.B.; Lv, H.Y.; Han, Y.C.; Grambole, D.; Herrmann, F.

    2007-01-01

    One of the most important subjects in the fusion material research is to study the hydrogen and helium concentration, diffusion and evolution in the structure material of fusion reactor, since the hydrogen and helium can be continuously produced by the large dose fast neutron irradiation on material. Various analysis Methods can be used, but the ion beam analysis method has some advantages for studying the hydrogen behaviors in nano- or micrometer resolution. In this work, the hydrogen motion and three-dimensional distribution after implantation into metal has been studied by resonance NRA, micro-ERDA and XRD etc Methods. The resolution of the H-depth-profile is in nanometer level and the lateral resolution can be reached to 2 micrometers. The evolution of hydrogen depth-profile in a titanium sample has been studied versus the change of normal stress in samples. Evident hydrogen diffusion has been observed, while a normal stress is changed in the range of 107-963 MPa. A new phase transformation during the hydrogenation is observed by the in-situ XRD analysis. The further study on the hydrogen behaviors in the structure materials of fusion reactor is in plan. (authors)

  19. The ion implanter of the Institute of Nuclear Physics and its application in the ion engineering; Implantator jonow IFJ i jego wykorzystanie w inzynierii jonowej

    Energy Technology Data Exchange (ETDEWEB)

    Drwiega, M.; Lipinska, E.; Lazarski, S.; Wierba, M.

    1993-09-01

    The device used for ion implantation is described in detail. It is built with the use of electromagnetic ion separator and consists of: ion source, ion beam system, ion mass analyzer and target chamber. The device parameters are also given. 14 refs, 5 figs, 2 tabs.

  20. Theoretical predictions of the lateral spreading of implanted ions

    International Nuclear Information System (INIS)

    Ashworth, D.G.; Oven, R.

    1986-01-01

    The theoretical model and computer program (AAMPITS-3D) of Ashworth and co-workers for the calculation of three-dimensional distributions of implanted ions in multi-element amorphous targets are extended to show that the lateral rest distribution is gaussian in a form with a lateral standard deviation (lateral-spread function) which is a function of depth beneath the target surface. A method is given whereby this function may be accurately determined from a knowledge of the projected range and chord range rest distribution functions. Examples of the lateral-spread function are given for boron, phosphorus and arsenic ions implanted into silicon and a detailed description is given of how the lateral-spread function may be used in conjunction with the projected range rest distribution function to provide a fully three-dimensional rest distribution of ions implanted into amorphous targets. Examples of normalised single ion isodensity contours computed from AMPITS-3D are compared with those obtained using the previous assumption of a lateral standard deviation which was independent of distance beneath the target surface. (author)

  1. Effects of Helium Implantation on the Mechanical Behavior of 100nm-diameter Iron Nano-pillars

    International Nuclear Information System (INIS)

    Landau, Peri; Guo, Qiang; Hosemann, Peter; Wang, Yongqiang; Greer, Julia R.

    2014-01-01

    Ferritic and ferritic-martensitic steels are being considered for cladding in the next generation nuclear reactors as well as fusion applications and spallation source materials. For these applications, helium (He) accumulation due to the high appmHe/dpa ratio, represent a matter of concern rooted in the detrimental effects of irradiation on the mechanical performance. The investigations of the effects of ion beam irradiation on mechanical properties of iron represent a useful way to simplify the complexity of irradiation process. This study is focused on the effects of mostly He bubbles on the mechanical behavior and deformation mechanisms

  2. Helium ion distributions in a 4 kJ plasma focus device by 1 mm-thick large-size polycarbonate detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sohrabi, M., E-mail: dr_msohrabi@yahoo.com; Habibi, M.; Ramezani, V.

    2014-11-14

    Helium ion beam profile, angular and iso-ion beam distributions in 4 kJ Amirkabir plasma focus (APF) device were effectively observed by the unaided eyes and studied in single 1 mm-thick large-diameter (20 cm) polycarbonate track detectors (PCTD). The PCTDs were processed by 50 Hz–HV electrochemical etching using a large-size ECE chamber. The results show that helium ions produced in the APF device have a ring-shaped angular distribution peaked at an angle of ∼±60° with respect to the top of the anode. Some information on the helium ion energy and distributions is also provided. The method is highly effective for ion beam studies. - Highlights: • Helium iso-ion beam profile and angular distributions were studied in the 4 kJ APF device. • Large-area 1 mm-thick polycarbonate detectors were processed by 50 Hz-HV ECE. • Helium ion beam profile and distributions were observed by unaided eyes in a single detector. • Helium ion profile has ring-shaped distributions with energies lower at the ring location. • Helium iso-ion track density, diameter and energy distributions are estimated.

  3. Angle-resolved imaging of single-crystal materials with MeV helium ions

    Energy Technology Data Exchange (ETDEWEB)

    Strathman, M D; Baumann, S [Charles Evans and Associates, Redwood City, CA (United States)

    1992-02-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a {+-}2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.).

  4. Hyperfine structure of the S levels of the muonic helium ion

    International Nuclear Information System (INIS)

    Martynenko, A. P.

    2008-01-01

    Corrections of the α 5 and α 6 orders to the energy spectrum of the hyperfine splitting of the 1S and 2S levels of the muonic helium ion are calculated with the inclusion of the electron vacuum polarization effects, nuclear-structure corrections, and recoil effects. The values ΔE hfs (1S) = -1334.56 meV and ΔE hfs (2S) = -166.62 meV obtained for hyperfine splitting values can be considered as reliable estimates for comparison with experimental data. The hyperfine structure interval Δ 12 = 8ΔE hfs (2S) - ΔE hfs (1S) = 1.64 meV can be used to verify QED predictions

  5. Double ionisation of helium in fast ion collisions: the role of momentum transfer

    International Nuclear Information System (INIS)

    Bapat, B.; Moshammer, R.; Schmitt, W.; Kollmus, H.; Ullrich, J.; Doerner, R.; Weber, T.; Khayyat, K.

    1999-01-01

    Double ionisation of helium in the perturbative regime has been explored in a kinematically complete collision experiment using 100 MeV/u C 6+ ions. Different ionisation mechanisms are identified by inspecting the angular distribution of the electrons as a function of the momentum transfer q to the target by the projectile. For q 1.2 a.u., the faster electron resulting from a binary encounter with the projectile is emitted along the direction of momentum transfer, while the other electron is distributed uniformly. Experimental data are compared with various model calculations based on the Bethe-Born approximation with shake-off. Surprisingly, the effect of the final state interaction is found to depend decisively on the choice of the initial state wave function. (orig.)

  6. Angle-resolved imaging of single-crystal materials with MeV helium ions

    International Nuclear Information System (INIS)

    Strathman, M.D.; Baumann, S.

    1992-01-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a ±2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.)

  7. Helium Ion Microscopy (HIM) for the imaging of biological samples at sub-nanometer resolution

    Science.gov (United States)

    Joens, Matthew S.; Huynh, Chuong; Kasuboski, James M.; Ferranti, David; Sigal, Yury J.; Zeitvogel, Fabian; Obst, Martin; Burkhardt, Claus J.; Curran, Kevin P.; Chalasani, Sreekanth H.; Stern, Lewis A.; Goetze, Bernhard; Fitzpatrick, James A. J.

    2013-12-01

    Scanning Electron Microscopy (SEM) has long been the standard in imaging the sub-micrometer surface ultrastructure of both hard and soft materials. In the case of biological samples, it has provided great insights into their physical architecture. However, three of the fundamental challenges in the SEM imaging of soft materials are that of limited imaging resolution at high magnification, charging caused by the insulating properties of most biological samples and the loss of subtle surface features by heavy metal coating. These challenges have recently been overcome with the development of the Helium Ion Microscope (HIM), which boasts advances in charge reduction, minimized sample damage, high surface contrast without the need for metal coating, increased depth of field, and 5 angstrom imaging resolution. We demonstrate the advantages of HIM for imaging biological surfaces as well as compare and contrast the effects of sample preparation techniques and their consequences on sub-nanometer ultrastructure.

  8. Implantation of β-emitters on biomedical implants: 32 P isotropic ion implantation using a coaxial plasma reactor

    International Nuclear Information System (INIS)

    Fortin, M.A.; Paynter, R.W.; Sarkissian, A.; Stansfield, B.L.; Terreault, B.; Dufresne, V.

    2003-01-01

    The development of endovascular brachytherapy and the treatment of certain types of cancers (liver, lung, prostate) often require the use of beta-emitters, sometimes in the form of radioisotope-implanted devices. Among the most commonly used isotopes figures 32 P, a pure beta-emitter (maximum energy: 1.7 MeV), of which the path in biological tissues is of a few cm, restricting the impact of electron bombardment to the immediate environment of the implant. Several techniques and processes have been tried to elaborate surfaces and devices showing strongly bonded, or implanted 32 P. Anodizing, vapor phase deposition, grafting of oligonucleotides, as well as ion implantation processes have been investigated by several research groups as methods to implant beta-radioisotopes into surfaces. A coaxial plasma reactor was developed at INRS to implant radioisotopes into cylindrical metallic objects, such as coronary stents commonly used in angioplasty procedures. The dispersion of 32 P atoms on the interior surfaces of the chamber can be investigated using radiographs, contributing to image the plasma ion transport mechanisms that guide the efficiency of the implantation procedure. The amount of radioactivity on the wall liner, on the internal components, and on the biomedical implants are quantified using a surface barrier detector. A comparative study establishes a relationship between the gray scale of the radiographs, and dose measurements. A program was developed to convert the digitized images into maps showing surface dose density in mCi/cm 2 . An integration process allows the quantification of the doses on the walls and components of the reactor. Finally, the resulting integral of the 32 P dose is correlated to the initial amount of radioactivity inserted inside the implanter before the dismantling procedure. This method could be introduced as a fast and reliable way to test, qualify and assess the amount of radioactivity present on the as-produced implants

  9. Structural changes IN THE Kh20N45M4B nickel alloys and THE Kh16N15M3B steel due to helium ion bombardment

    International Nuclear Information System (INIS)

    Kalin, B.A.; Chernikov, U.N.; Chernov, I.I.; Kozhevnikov, O.A.; Shishkin, G.N.; Yakushin, V.L.

    1986-01-01

    Using transmission electron microscopy, x-ray structural analysis, and the thermal desorption techniques, the authors carried out a detailed study of the structural and phase changes, defect formation, and helium accumulation in the He + -bombarded 16-15 austenitic steels and 20-45 nickel alloys. Microstructure of the bombarded specimens was studied using the methods of transmission electron microscopy of thin foils in the EVM-100, and EM-301G electron microscopes. Results of x-ray studies on the bombarded specimens are presented. The conducted studies show that bombardment of structural materials with light ions can lead to significant structural damages and changes in the chemical and phase composition of the surface layer. The possible mechanisms of the changes in the chemical and phase composition include selective sputtering and radiation-induced accelerated diffusion of elements in the field of internal lateral stresses developing during the He + implantation process

  10. High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

    Science.gov (United States)

    Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

    1998-05-01

    Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

  11. Cavity nucleation and growth during helium implantation and neutron irradiation of Fe and steel

    DEFF Research Database (Denmark)

    Eldrup, Morten Mostgaard; Singh, Bachu Narain

    In order to investigate the role of He in cavity nucleation in neutron irradiated iron and steel, pure iron and Eurofer-97 steel have been He implanted and neutron irradiated in a systematic way at different temperatures, to different He and neutron doses and with different He implantation rates....

  12. Helium Ion Microscope: A New Tool for Sub-nanometer Imaging of Soft Materials

    Science.gov (United States)

    Shutthanandan, V.; Arey, B.; Smallwood, C. R.; Evans, J. E.

    2017-12-01

    High-resolution inspection of surface details is needed in many biological and environmental researches to understand the Soil organic material (SOM)-mineral interactions along with identifying microbial communities and their interactions. SOM shares many imaging characteristics with biological samples and getting true surface details from these materials are challenging since they consist of low atomic number materials. FE-SEM imaging is the main imagining technique used to image these materials in the past. These SEM images often show loss of resolution and increase noise due to beam damage and charging issues. Newly developed Helium Ion Microscope (HIM), on the other hand can overcome these difficulties and give very fine details. HIM is very similar to scanning electron microscopy (SEM) but instead of using electrons as a probe beam, HIM uses helium ions with energy ranges from 5 to 40 keV. HIM offers a series of advantages compared to SEM such as nanometer and sub-nanometer image resolutions (about 0.35 nm), detailed surface topography, high surface sensitivity, low Z material imaging (especially for polymers and biological samples), high image contrast, and large depth of field. In addition, HIM also has the ability to image insulating materials without any conductive coatings so that surface details are not modified. In this presentation, several scientific applications across biology and geochemistry will be presented to highlight the effectiveness of this powerful microscope. Acknowledgements: Research was performed using the Environmental Molecular Sciences Laboratory (EMSL), a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at PNNL. Work was supported by DOE-BER Mesoscale to Molecules Bioimaging Project FWP# 66382.

  13. Helium-induced hardening effect in polycrystalline tungsten

    Science.gov (United States)

    Kong, Fanhang; Qu, Miao; Yan, Sha; Zhang, Ailin; Peng, Shixiang; Xue, Jianming; Wang, Yugang

    2017-09-01

    In this paper, helium induced hardening effect of tungsten was investigated. 50 keV He2+ ions at fluences vary from 5 × 1015 cm-2 to 5 × 1017 cm-2 were implanted into polycrystalline tungsten at RT to create helium bubble-rich layers near the surface. The microstructure and mechanical properties of the irradiated specimens were studied by TEM and nano-indentor. Helium bubble rich layers are formed in near surface region, and the layers become thicker with the rise of fluences. Helium bubbles in the area of helium concentration peak are found to grow up, while the bubble density is almost unchanged. Obvious hardening effect is induced by helium implantation in tungsten. Micro hardness increases rapidly with the fluence firstly, and more slowly when the fluence is above 5 × 1016 cm-2. The hardening effect of tungsten can be attributed to helium bubbles, which is found to be in agreement with the Bacon-Orowan stress formula. The growing diameter is the major factor rather than helium bubbles density (voids distance) in the process of helium implantation at fluences below 5 × 1017 cm-2.

  14. Doping of silicon carbide by ion implantation; Dopage du carbure de silicium par implantation ionique

    Energy Technology Data Exchange (ETDEWEB)

    Gimbert, J

    1999-03-04

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  15. submitter Biologically optimized helium ion plans: calculation approach and its in vitro validation

    CERN Document Server

    Mairani, A; Magro, G; Tessonnier, T; Kamp, F; Carlson, D J; Ciocca, M; Cerutti, F; Sala, P R; Ferrari, A; Böhlen, T T; Jäkel, O; Parodi, K; Debus, J; Abdollahi, A; Haberer, T

    2016-01-01

    Treatment planning studies on the biological effect of raster-scanned helium ion beams should be performed, together with their experimental verification, before their clinical application at the Heidelberg Ion Beam Therapy Center (HIT). For this purpose, we introduce a novel calculation approach based on integrating data-driven biological models in our Monte Carlo treatment planning (MCTP) tool. Dealing with a mixed radiation field, the biological effect of the primary $^4$He ion beams, of the secondary $^3$He and $^4$He (Z  =  2) fragments and of the produced protons, deuterons and tritons (Z  =  1) has to be taken into account. A spread-out Bragg peak (SOBP) in water, representative of a clinically-relevant scenario, has been biologically optimized with the MCTP and then delivered at HIT. Predictions of cell survival and RBE for a tumor cell line, characterized by ${{(\\alpha /\\beta )}_{\\text{ph}}}=5.4$ Gy, have been successfully compared against measured clonogenic survival data. The mean ...

  16. Complete momentum balance for single ionization of helium by fast ion impact: I. Experiment

    International Nuclear Information System (INIS)

    Moshammer, R.; Kollmus, H.; Unverzagt, M.; Schmidt-Boecking, H.; Wood, C.J.; Olson, R.E.

    1997-02-01

    The collision dynamics of He single ionization by 3.6 MeV/u Se 28+ impact was explored using the GSI-reaction microscope, a high resolution integrated multi electron - recoil-ion momentum spectrometer. The complete three particle final state momentum distribution (9 cartesian components p i ) was imaged with a resolution of Δp i ∼ ±0.1 a.u. by measuring the three momentum components of the emitted electron and the recoiling target-ion in coincidence. The projectile energy loss has been determined on a level of ΔE p /E p ∼ 10 -7 and projectile scattering angles as small as Δθ ∼ 10 -7 rad became accessible. The experimental data which are compared with results of classical trajectory Monte-Carlo (CTMC) calculations reveal an unprecedented insight into the details of the electron emission and the collision dynamics for ionization of helium by fast heavy-ion impact. (orig.)

  17. Complete momentum balance for single ionization of helium by fast ion impact: I. Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Moshammer, R.; Kollmus, H.; Unverzagt, M.; Schmidt-Boecking, H. [Frankfurt Univ. (Germany). Inst. fuer Kernphysik; Ullrich, J.; Schmitt, W. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Wood, C.J.; Olson, R.E. [Missouri Univ., Rolla, MO (United States). Dept. of Physics

    1997-02-01

    The collision dynamics of He single ionization by 3.6 MeV/u Se{sup 28+} impact was explored using the GSI-reaction microscope, a high resolution integrated multi electron - recoil-ion momentum spectrometer. The complete three particle final state momentum distribution (9 cartesian components p{sub i}) was imaged with a resolution of {Delta}p{sub i} {approx} {+-}0.1 a.u. by measuring the three momentum components of the emitted electron and the recoiling target-ion in coincidence. The projectile energy loss has been determined on a level of {Delta}E{sub p}/E{sub p} {approx} 10{sup -7} and projectile scattering angles as small as {Delta}{theta} {approx} 10{sup -7}rad became accessible. The experimental data which are compared with results of classical trajectory Monte-Carlo (CTMC) calculations reveal an unprecedented insight into the details of the electron emission and the collision dynamics for ionization of helium by fast heavy-ion impact. (orig.)

  18. 4-rod RFQ linac for ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Fujisawa, Hiroshi; Hamamoto, Nariaki; Inouchi, Yutaka [Nisshin Electric Co. Ltd., Kyoto (Japan)

    1997-03-01

    A 34 MHz 4-rod RFQ linac system has been upgraded in both its rf power efficiency and beam intensity. The linac is able to accelerate in cw operation 0.83 mA of a B{sup +} ion beam from 0.03 to 0.91 MeV with transmission of 61 %. The rf power fed to the RFQ is 29 kW. The unloaded Q-value of the RFQ has been improved approximately 61 % to 5400 by copper-plating stainless steel cooling pipes in the RFQ cavity. (author)

  19. Using ion production to monitor the birth and death of a metastable helium Bose-Einstein condensate

    International Nuclear Information System (INIS)

    Seidelin, S; Sirjean, O; Gomes, J Viana; Boiron, D; Westbrook, C I; Aspect, A

    2003-01-01

    We discuss observations of the ion flux from a cloud of trapped 2 3 S 1 metastable helium atoms. Both Bose-Einstein condensates (BEC) and thermal clouds were investigated. The ion flux is compared with time-of-flight observations of the expanded cloud. We show data concerning BEC formation and decay, as well as measurements of two-and three-body ionization rate constants. We also discuss possible improvements and extensions of our results

  20. Long-wavelength germanium photodetectors by ion implantation

    International Nuclear Information System (INIS)

    Wu, I.C.; Beeman, J.W.; Luke, P.N.; Hansen, W.L.; Haller, E.E.

    1990-11-01

    Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended long-wavelength threshold near 192μm. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/sec at temperatures below 1.3 K under an operating bias of up to 70 mV. Optimum peak responsivity and noise equivalent power (NEP) for these sensitive detectors are 0.9 A/W and 5 x 10 -16 W/Hz 1/2 at 99 μm, respectively. The dependence of the performance of devices on the residual donor concentration in the implanted layer will be discussed. 12 refs., 4 figs