Martensitic transformation in helium implanted 316 stainless steel

International Nuclear Information System (INIS)

Ishimatsu, Manabu; Tsukuda, Noboru

1997-01-01

In order to simulate surface deterioration phenomenon due to particle loading of SUS-316 steel which is one of candidate materials for nuclear fusion reactor vacuum wall structure material, helium ion implanting was conducted at room temperature, 473 K and 573 K. To martensitic phase formed as a results, implantation dose dependence, implanting temperature dependence, and annealing under 1073 K were conducted. Formation of the martensitic phase was suppressed at high implanting temperature. At room temperature implantation, the martensitic phase disappeared at more than 873 K, but at high temperature implantation, it increased abnormally near at 973 K. This showed that deterioration of materials depended extremely upon using temperature and temperature history. (G.K.)

Comparative study of image contrast in scanning electron microscope and helium ion microscope.

Science.gov (United States)

O'Connell, R; Chen, Y; Zhang, H; Zhou, Y; Fox, D; Maguire, P; Wang, J J; Rodenburg, C

2017-12-01

Images of Ga + -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga + density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Lattice site of helium implanted in Si and diamond

International Nuclear Information System (INIS)

Allen, W.R.

1993-01-01

Single crystals of silicon and diamond were implanted at 300K with 70 keV 3 He. Ion channeling analyses were executed by application of Rutherford backscattering spectrometry and nuclear reaction analysis. Helium exhibits a non-random lattice site in the channeling angular distributions for silicon and diamond. A major fraction of the implanted He was qualitatively identified to be near to the tetrahedral interstice in both materials

Positron and nanoindentation study of helium implanted high chromium ODS steels

Science.gov (United States)

Veternikova, Jana Simeg; Fides, Martin; Degmova, Jarmila; Sojak, Stanislav; Petriska, Martin; Slugen, Vladimir

2017-12-01

Three oxide dispersion strengthened (ODS) steels with different chromium content (MA 956, MA 957 and ODM 751) were studied as candidate materials for new nuclear reactors in term of their radiation stability. The radiation damage was experimentally simulated by helium ion implantation with energy of ions up to 500 keV. The study was focused on surface and sub-surface structural change due to the ion implantation observed by mostly non-destructive techniques: positron annihilation lifetime spectroscopy and nanoindentation. The applied techniques demonstrated the best radiation stability of the steel ODM 751. Blistering effect occurred due to high implantation dose (mostly in MA 956) was studied in details.

Depth-dependence recovery of helium-implanted 18 carats gold-silver alloy

Energy Technology Data Exchange (ETDEWEB)

Thome, T.; Grynszpan, R.I. [DCE-CTA-LOT, Arcueil (France); Lab. de Chimie Metallurgique des Terres Rares, Thiais (France); Fradin, J. [DCE-CTA-LOT, Arcueil (France); SINUMEF, Ecole Nationale Superieure d' Arts et Metiers, Paris (France); Anwand, W.; Brauer, G. [Forschungszentrum Rossendorf e.V. (FZR), Dresden (Germany)

2001-07-01

Helium diffusion in Au{sub 60}Ag{sub 40} is investigated using a variable energy positron beam. The positron diffusion length of the annealed material (66 {+-} 1 nm) is reduced after implantation of 2.2 x 10{sup 14} He ions/cm{sup 2} at 300 keV. During isochronal annealing up to 600 K, the recovery rate of the Doppler broadening lineshape parameter S strongly depends on the distance to the helium implantation peak, indicating an increase of the defect stabilization by He atoms. In contrast, for subsequent annealing, and irrespective of the depth, a maximum in S occurs at 670 K (around 0.5 T{sub m}) resulting from competing processes of growth and breaking up of helium bubbles. (orig.)

Martensitic transformations in 304 stainless steel after implantation with helium, hydrogen and deuterium

International Nuclear Information System (INIS)

Johnson, E.; Grabaek, L.; Johansen, A.; Sarholt-Kristensen, L.; Hayashi, N.; Sakamoto, I.

1988-01-01

Using conversion electron Moessbauer spectroscopy (CEMS) and glancing angle X-ray diffraction, martensitic transformations have been studied in type 304 austenitic stainless steels implanted with 8 keV helium, hydrogen and deuterium. Furthermore, using CEMS in the energy selective mode (DCEMS), the distribution of martensite in the implantation zone has been analysed as a function of depth. Transformation of the implanted layer occurs after implantation with 10 21 m -2 He + ions while 100 times higher fluence is required for the implanted layer to transform after hydrogen or deuterium implantations. This difference is due to the ability of helium to form high pressure gas bubbles, while implanted hydrogen is continuously lost by back diffusion to the surface. The helium bubbles, which are confined under pressures as high as 60 GPa, will induce extremely high stress levels in the implanted layer, by which the martensitic transformation is directly induced. The fact that a much higher fluence of hydrogen or deuterium is required to induce the transformation, shows that radiation damage plays only a minor role. In this case, the martensitic transformation first occurs when the implanted layer resembles the state of a cathodically charged surface. (orig.)

Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

International Nuclear Information System (INIS)

Langley, R.A.

1979-01-01

The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H + beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10 17 He cm -2 . The blister diameter increased with increasing implant fluence from about 0.8 μm at 10 18 He cm -2 to 5.5 μm at 3 x 10 18 He cm -2

On the blister formation in copper alloys due to the helium ion implantation

International Nuclear Information System (INIS)

Moreno, D.; Eliezer, D.

1997-01-01

Structural materials in fusion reactors will be exposed to alpha radiation and helium implantation over a broad range of energies. A new approach to the blister-formation phenomenon is discussed by means of the mathematical solution on a uniformly loaded circular plate with clamped edges (circular diaphragm). In the present investigation, it was found that blister formation depends on the mechanical properties of the alloys and the near-surface concentration of the implanted gas, which itself is contingent on the crystallographic orientation by means of the stopping power of the implanted atoms. The reported model is based on the fact that at certain depths from the surface, the pressure in the cavities approaches the yield stress of the metal and blistering starts. The thickness of this thin film depends on the mechanical properties of the specific metal. Once a blister cavity is formed, the deformation of the thin film to form a blister cap depends on the buildup of pressure in the cavity contingent on the implanted dose. For the present model, it is sufficient to say that the thickness of the blister's cap cannot be correlated with the projected range of the implantation, as assumed by other authors. The implanted helium concentration needed to build up enough gas pressure to create a blister at a depth which is close to the projected range is higher by 50 times than the gas helium concentration in the cavity. Experimental results, such as the fact that the blisters have burst at the edge of the circular skin, where the maximum stresses are developed, and the fact that at high implantation energy (large projected range), the bursting of the blisters occurs by multilayer caps, support the present model

Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium

International Nuclear Information System (INIS)

Barfoot, K.M.; Webb, R.P.; Donnelly, S.E.

1984-01-01

Development of topography in thin (55.5 μg cm -2 ) self-supporting aluminium films, caused by high fluence (approx. 10 17 ions cm -2 ) irradiation with 5 keV helium ions, has been observed. This has been achieved by measuring the topography-enhanced energy straggling of 0.40 MeV 4 He + ions transmitted through the foils and detected with an electrostatic analyser of resolution 0.2 keV. Features, about 0.7 μm in width, are observed with scanning electron microscopy. TRIM Monte Carlo calculations of the implantation processes are performed in order to follow the helium implantation and damage depth distributions. It is deduced that a form of thin film micro-wrinkling has occurred which is caused by the relief of stress brought about by the implantation of helium. (author)

Temperature dependence of helium-implantation-induced lattice swelling in polycrystalline tungsten: X-ray micro-diffraction and Eigenstrain modelling

International Nuclear Information System (INIS)

Broglie, I. de; Beck, C.E.; Liu, W.; Hofmann, F.

2015-01-01

Using synchrotron X-ray micro-diffraction and Eigenstrain analysis the distribution of lattice swelling near grain boundaries in helium-implanted polycrystalline tungsten is quantified. Samples heat-treated at up to 1473 K after implantation show less uniform lattice swelling that varies significantly from grain to grain compared to as-implanted samples. An increase in lattice swelling is found in the vicinity of some grain boundaries, even at depths beyond the implanted layer. These findings are discussed in terms of the evolution of helium-ion-implantation-induced defects

Positron annihilation investigation and nuclear reaction analysis of helium and oxygen-implanted zirconia

International Nuclear Information System (INIS)

Grynszpan, R.I.; Saude, S.; Anwand, W.; Brauer, G.

2005-01-01

Since irradiation affects in-service properties of zirconia, we investigated the fluence dependence on production and thermal stability of defects induced by helium and oxygen-ion implantation in single crystals of yttria-fully-stabilized zirconia. In either case, depth profiling by slow positron implantation spectroscopy (SPIS) detects a distribution of vacancy-type defects peaking at 60% of the projected ion range R p . Owing to the saturation of positron-trapping occurring for low fluences, which depends on the ion mass, we could estimate a critical size of clusters ranging from 0.4 to 1.6 nm. The lack of SPIS-evidence of an open-volume excess at R p is explained by the presence of over-pressurized gas bubbles. This assumption is confirmed by Nuclear Reaction Analysis of 3 He concentration profiles, which shows that helium remains partly trapped at R p , even after annealing above 400 o C

Interaction of implanted deuterium and helium with beryllium: radiation enhanced oxidation

Energy Technology Data Exchange (ETDEWEB)

Langley, R.A.

1979-01-01

The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with an Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup; namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H/sup +/ beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He blisters occurred at approx. 1.75 x 10/sup 17/ He cm/sup -2/. The blister diameter increased with increasing implant fluence from about 0.8 ..mu..m at 10/sup 18/ He cm/sup -2/ to 5.5 ..mu..m at 3 x 10/sup 18/ He cm/sup -2/.

Thermal desorption of deuterium from polycrystalline nickel pre-implanted with helium

International Nuclear Information System (INIS)

Shi, S.Q.; Abramov, E.; Thompson, D.A.

1990-01-01

The thermal desorption technique has been used to study the trapping of deuterium atoms in high-purity polycrystalline nickel pre-implanted with helium for 1 x 10 19 to 5 x 10 20 ions/m 2 . The effect of post-implantation annealing at 703 K and 923 K on the desorption behavior was investigated. Measured values of the total amount of detrapped deuterium (Q T ) and helium concentration were used in a computer simulation of the desorption curve. It was found that the simulation using one or two discrete trap energies resulted in an inadequate fit between the simulated and the measured data. Both experimental and simulation results are explained using a stress-field trapping model. The effective binding energy, E b eff , was estimated to be in the range of 0.4-0.6 eV. Deuterium charging was found to stimulate a release of helium at a relatively low temperature

SIMS as a new methodology to depth profile helium in as-implanted and annealed pure bcc metals?

Energy Technology Data Exchange (ETDEWEB)

Gorondy-Novak, S. [CEA, DEN, Service de Recherches de Métallurgie Physique, Université Paris-Saclay, F-91191 Gif-sur-Yvette (France); Jomard, F. [Groupe d' Etude de la Matière Condensée, CNRS, UVSQ, 45 avenue des Etats-Unis, 78035 Versailles cedex (France); Prima, F. [PSL Research University, Chimie ParisTech – CNRS, Institut de Recherche de Chimie Paris, 75005 Paris (France); Lefaix-Jeuland, H., E-mail: helene.lefaix@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Université Paris-Saclay, F-91191 Gif-sur-Yvette (France)

2017-05-01

Reliable He profiles are highly desirable for better understanding helium behavior in materials for future nuclear applications. Recently, Secondary Ions Mass Spectrometry (SIMS) allowed the characterization of helium distribution in as-implanted metallic systems. The Cs{sup +} primary ion beam coupled with CsHe{sup +} molecular detector appeared to be a promising technique which overcomes the very high He ionization potential. In this study, {sup 4}He depth profiles in pure body centered cubic (bcc) metals (V, Fe, Ta, Nb and Mo) as-implanted and annealed, were obtained by SIMS. All as-implanted samples exhibited a projected range of around 200 nm, in agreement with SRIM theoretical calculations. After annealing treatment, SIMS measurements evidenced the evolution of helium depth profile with temperature. The latter SIMS results were compared to the helium bubble distribution obtained by Transmission Electron Microscopy (TEM). This study confirmed the great potential of this experimental procedure as a He-depth profiling technique in bcc metals. Indeed, the methodology described in this work could be extended to other materials including metallic and non-metallic compounds. Nevertheless, the quantification of helium concentration after annealing treatment by SIMS remains uncertain probably due to the non-uniform ionization efficiency in samples containing large bubbles.

Radiation blistering of niobium in sequence irradiated by helium ions with different energy

International Nuclear Information System (INIS)

Das, S.K.; Kaminskij, M.S.; Guseva, M.I.; Gusev, V.M.; Krasulin, Yu.L.; Martynenko, Yu.V.; Rozina, I.A.

1977-01-01

The results of the investigation of the blistering of the surface of polycrystalline niobium foils subjected to successive irradiation by helium ions of energies of 3 to 50 keV are reported. The critical doses of irradiation, the types of blisters and the rate of erosion were determined. A comparative analysis of the formation of blisters on cold-rolled and annealed niobium has been made. On cold-rolled niobium the blistering is mainly due to ions with energies of 3 to 80 keV, on annealed niobium of 100 to 500 keV. The erosion of cold-rolled niobium takes place through blisters formed by the action of helium ions with energies of the order of 45 keV, and that of annealed niobium, through helium ions with energies of 100 to 500 keV. The observed differences in the formation of blisters on niobium irradiated with helium ions of a wide range of energies are explained by the change in the diffusion kinetics of implanted ions having a uniform distribution across the thickness of the target

Damage, trapping and desorption at the implantation of helium and deuterium in graphite, diamond and silicon carbide

International Nuclear Information System (INIS)

Lopez, G.A.R.

1995-07-01

The production, thermal stability and structure of ion induced defects have been studied by Rutherford backscattering in channeling geometry for the implantation of helium and deuterium in graphite, diamond and silicon carbide with energies of 8 and 20 keV. At the implantation of deuterium and helium ions more defects were measured in graphite than in diamond or silicon carbide at equal experimental conditions. This is due to increased backscattering in graphite, which is caused by the splitting and tilting of crystallites and a local reordering of lattice atoms around defects. At 300 K, Helium produces more defects in all three materials than deuterium with equal depth distribution of defects. The ratio of the defects produced by helium and deuterium agrees very well with the corresponding ratio of the energy deposited in nuclear collisions. In graphite, only small concentrations of deuterium induced defects anneal below 800 K, while in diamond small concentrations of deuterium as well as of helium induced defects anneal mostly below 800 K. This annealing behavior is considered to be due to recombination of point defects. The buildup of helium and deuterium in graphite is different. The trapping of deuterium proceeds until saturation is reached, while in the case of helium trapping is interrupted by flaking. In diamond, deuterium as well as helium are trapped almost completely until at higher fluences reemission starts and saturation is reached. Two desorption mechanisms were identified for the thermal desorption of helium from base-oriented graphite. Helium implanted at low fluences desorbs diffusing to the surface, while for the implantation of high fluences the release of helium due to blistering dominates. The desorption of deuterium from graphite and diamond shows differences. While in graphite the desorption starts already at 800 K, in diamond up to 1140 K only little desorption can be observed. These differences can be explained by the different transport

A hot implantation study on the evolution of defects in He ion implanted MgO(1 0 0)

International Nuclear Information System (INIS)

Fedorov, A.V.; Huis, M.A. van; Veen, A. van

2002-01-01

Ion implantation at elevated temperature, so-called hot implantation, was used to study nucleation and thermal stability of the defects. In this work, MgO(1 0 0) single crystal samples were implanted with 30 keV He ions at various implantation temperatures. The implantation doses ranged from 10 14 to 10 16 cm -2 . The implantation introduced defects were subsequently studied by thermal helium desorption spectroscopy (THDS) and Doppler broadening positron beam analysis (PBA). The THDS study provides vital information on the kinetics of He release from the sample. PBA technique, being sensitive to the open volume defects, provides complementary information on cavity evolution. The THD study has shown that in most cases helium release is characterised by the activation energy of Q=4.7±0.5 eV with the maximum release temperature of T max =1830 K. By applying first order desorption model the pre-exponent factor is estimated as ν=4.3x10 11 s -1

Radiation blistering of Nb implanted sequentially with helium ions of different energies (3-500 keV)

International Nuclear Information System (INIS)

Guseva, M.I.; Gusev, V.; Krasulin, U.L.; Martinenko, U.V.; Das, S.K.; Kaminsky, M.S.

1976-01-01

Cold rolled, polycrystalline niobium samples were irradiated at room temperature with 4 He + ions sequentially at 14 different energies over an energy range from 3 keV--500 keV in steps of 50 keV. The dose for each energy was chosen to give an approximately uniform concentration of helium between the implant depths corresponding to 3 keV and 500 keV. In one set of experiments the irradiations were started at the Kurchatov Institute with 3 keV 4 He + ions and extended up to 80 keV in several steps. Subsequently, the same target area was irradiated with 4 He + ions at Argonne National Laboratory (ANL) starting at 100 keV and increased to 500 keV in steps of 50 keV. Another set of irradiations were started at ANL with 500 keV 4 He + ions and continued with decreasing ion energies to 100 keV. Subsequently, the same area was irradiated at the Kurchatov Institute starting at 80 keV and continued with decreasing ion energies to 3 keV. Both sets of irradiations were completed for two different total doses, 0.5 C cm -2 and 1.0 C cm -2

Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

International Nuclear Information System (INIS)

Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin

2010-01-01

Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10 10 -10 11 cm -2 . The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

Effects of helium implantation on fatigue properties of F82H-IEA heat

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, N.; Murase, Y.; Nagakawa, J. [National Research Institute for Metals, Tsukuba, Ibaraki (Japan)

2007-07-01

Full text of publication follows: Ferritic steels including reduced activation ones that have been recognized as attractive structural candidates for DEMO reactors and the beyond are known to be highly resistant to helium embrittlement. However, almost studies that deduced this behavior have been carried out by means of short time experiments such as tensile tests, and a few results are available concerning long term inspections, although the detrimental helium effect appears more severely in the latter. The aim of this work is to obtain further information on the influence of helium on fatigue properties of a representative reduced activation ferritic/martensitic steel F82H (8Cr2WVTa) using helium implantation technique with a cyclotron. The material examined is an IEA heat version of F82H. In order to realize a fine grain size due to thin specimens (0.08 mm thick) for ion irradiation, normalizing was conducted at rather low temperature of 1213 K, followed by tempering at 1023 K. Helium was implanted by {alpha}-particle irradiation at 823 K, a desired highest temperature of this material for first wall application, to the concentration of 100 appm He with an implantation rate of about 1.7 x 10{sup -3} appm He/s. Subsequent fatigue tests were conducted at the same temperature as that of irradiation, not only on implanted specimens but also on reference controls which were not implanted with helium but experienced the same metallurgical histories as those of irradiated ones. After fracture, samples were observed with electron microscopes. In short time periods, it has been notified that helium introduction caused no significant deterioration of both fatigue life and extension at fracture. In addition, all specimens failed in a fully trans-crystalline and ductile manner, irrespective of whether helium was present or not. Indication of grain boundary embrittlement was therefore not discerned. These facts would reflect insusceptible characteristics of this material to

Effects of helium implantation on fatigue properties of F82H-IEA heat

International Nuclear Information System (INIS)

Yamamoto, N.; Murase, Y.; Nagakawa, J.

2007-01-01

Full text of publication follows: Ferritic steels including reduced activation ones that have been recognized as attractive structural candidates for DEMO reactors and the beyond are known to be highly resistant to helium embrittlement. However, almost studies that deduced this behavior have been carried out by means of short time experiments such as tensile tests, and a few results are available concerning long term inspections, although the detrimental helium effect appears more severely in the latter. The aim of this work is to obtain further information on the influence of helium on fatigue properties of a representative reduced activation ferritic/martensitic steel F82H (8Cr2WVTa) using helium implantation technique with a cyclotron. The material examined is an IEA heat version of F82H. In order to realize a fine grain size due to thin specimens (0.08 mm thick) for ion irradiation, normalizing was conducted at rather low temperature of 1213 K, followed by tempering at 1023 K. Helium was implanted by α-particle irradiation at 823 K, a desired highest temperature of this material for first wall application, to the concentration of 100 appm He with an implantation rate of about 1.7 x 10 -3 appm He/s. Subsequent fatigue tests were conducted at the same temperature as that of irradiation, not only on implanted specimens but also on reference controls which were not implanted with helium but experienced the same metallurgical histories as those of irradiated ones. After fracture, samples were observed with electron microscopes. In short time periods, it has been notified that helium introduction caused no significant deterioration of both fatigue life and extension at fracture. In addition, all specimens failed in a fully trans-crystalline and ductile manner, irrespective of whether helium was present or not. Indication of grain boundary embrittlement was therefore not discerned. These facts would reflect insusceptible characteristics of this material to high

Helium implanted AlHf as studied by 181 Ta TDPAC

Indian Academy of Sciences (India)

Measurements on helium implanted sample indicate the binding of helium associated defects by Hf solute clusters. Isochronal annealing measurements indicate the dissociation of the helium implantation induced defects from Hf solute clusters for annealing treatments beyond 650 K. On comparison of the present results ...

Trapping and re-emission of energetic hydrogen and helium ions in materials

International Nuclear Information System (INIS)

Yamaguchi, Sadae

1981-01-01

The experimental results on the trapping and re-emission of energetic hydrogen and helium ions in materials are explained. The trapping of deuterium and helium in graphite saturates at the concentration of 10 18 ions/cm 2 . The trapping rate of hydrogen depends on the kinds of target materials. In the case of the implantation in Mo over 3 x 10 16 H/cm 2 , hydrogen is hardly trapped. On the other hand, the trapping of hydrogen in Ti, Zr and Ta which form solid solution is easily made. The hydrogen in these metals can diffuse toward the inside of metals. The deuterium retained in 316 SS decreased with time. The trapping rate reached saturation more rapidly at higher implantation temperature. The effective diffusion constant for the explanation of the re-emission process is 1/100 as small as the ordinary value. The radiation damage due to helium irradiation affects on the trapping of deuterium in Mo. The temperature dependence of the trapping rate can be explained by the diffusion model based on the Sievert's law. The re-emission of helium was measured at various temperature. At low temperature, the re-emission was low at first, then the rate increased. At high temperature, the re-emission rate was high from the beginning. (Kato, T.)

A description of bubble growth and gas release of helium implanted tungsten

International Nuclear Information System (INIS)

Sharafat, S.; Hu, Q.; Ghoniem, N.; Tkahashi, A.

2007-01-01

Full text of publication follows: Bubble growth and gas release during annealing of helium implanted tungsten is described using a Kinetic Monte Carlo approach. The implanted spatial profiles of stable bubble nuclei are first determined using the Kinetic Rate Theory based helium evolution code, HEROS. The effects of implantation energy, temperature, and bias forces, such as temperature- and stress gradients on bubble migration and coalescence are investigated to explain experimental gas release measurements. This comprehensive helium bubble evolution and release model, demonstrates the impact of near surface (< 1 um) versus deep helium implantation on bubble evolution. Near surface implanted helium bubbles readily attain large equilibrium sizes, while matrix bubbles remain small with high helium pressures. Using the computer simulation, the various stages of helium bubble nucleation, growth, coalescence, and migration are demonstrated and compared with available experimental results. (authors)

Helium sequestration at nanoparticle-matrix interfaces in helium + heavy ion irradiated nanostructured ferritic alloys

Energy Technology Data Exchange (ETDEWEB)

Parish, C.M., E-mail: parishcm@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Unocic, K.A.; Tan, L. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Zinkle, S.J. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); University of Tennessee, Knoxville, TN 37996 (United States); Kondo, S. [Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011 (Japan); Snead, L.L. [Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Hoelzer, D.T.; Katoh, Y. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2017-01-15

We irradiated four ferritic alloys with energetic Fe and He ions: one castable nanostructured alloy (CNA) containing Ti-W-Ta-carbides, and three nanostructured ferritic alloys (NFAs). The NFAs were: 9Cr containing Y-Ti-O nanoclusters, and two Fe-12Cr-5Al NFAs containing Y-Zr-O or Y-Hf-O clusters. All four were subjected to simultaneous dual-beam Fe + He ion implantation (650 °C, ∼50 dpa, ∼15 appm He/dpa), simulating fusion-reactor conditions. Examination using scanning/transmission electron microscopy (STEM) revealed high-number-density helium bubbles of ∼8 nm, ∼10{sup 21} m{sup −3} (CNA), and of ∼3 nm, 10{sup 23} m{sup −3} (NFAs). STEM combined with multivariate statistical analysis data mining suggests that the precipitate-matrix interfaces in all alloys survived ∼50 dpa at 650 °C and serve as effective helium trapping sites. All alloys appear viable structural material candidates for fusion or advanced fission energy systems. Among these developmental alloys the NFAs appear to sequester the helium into smaller bubbles and away from the grain boundaries more effectively than the early-generation CNA.

Effect of 3.0 MeV helium implantation on electrical characteristics of 4H-SiC BJTs

Energy Technology Data Exchange (ETDEWEB)

Usman, Muhammad; Hallen, Anders; Ghandi, Reza; Domeij, Martin, E-mail: musman@kth.s [Microelectronics and Applied Physics, School of Communication and Information Technology, Royal Institute of Technology (KTH), Electrum 229, 16440 Kista (Sweden)

2010-11-01

Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with 3.0 MeV helium in the fluence range of 10{sup 10}-10{sup 11} cm{sup -2}. The devices were characterized by their current-voltage (I-V) behaviour before and after the implantation, and the results showed a clear degradation of the output characteristics of the devices. Annealing these implanted devices increased the interface traps between passivation oxide and the semiconductor, resulting in an increase of base current in the low-voltage operation range.

Effect of helium implantation on mechanical properties of EUROFER97 evaluated by nanoindentation

International Nuclear Information System (INIS)

Roldán, M.; Fernández, P.; Rams, J.; Jiménez-Rey, D.; Ortiz, C.J.; Vila, R.

2014-01-01

Helium effects on EUROFER97 mechanical properties were studied by means of nanoindentation. The steel was implanted with He ions in a stair-like profile configuration using energies from 2 to 15 MeV at room temperature. Firstly, a deep nanoindentation study was carried out on as-received state (normalized + tempered) in order to obtain a reliable properties database at the nanometric scale, including aspects such as indentation size effect. The nanoindentation hardness of tests on He implanted samples showed a hardness increase depending on the He concentration. The hardness increase follows the He implantation concentration profile with a good accuracy according to BCA calculations using MARLOWE code, considering the whole volume affected by the nanoindentation tests. The results obtained in this work shown that nanoindentation technique permits to assess any change of hardness properties due to ion implantation

Development of a high current ion implanter

International Nuclear Information System (INIS)

Choi, Byung Ho; Kim, Wan; Jin, Jeong Tae

1990-01-01

A high current ion implanter of the energy of 100 Kev and the current of about 100 mA has been developed for using the high dose ion implantation, surface modification of steels and ceramics, and ion beam milling. The characteristics of the beam extraction and transportation are investigated. A duoPIGatron ion source compatible with gas ion extraction of about 100 mA, a single gap acceleration tube which is able to compensate the divergence due to the space charge effect, and a beam transport system with the concept of the space charge neutralization are developed for the high current machine. The performance of the constructed machine shows that nitrogen, argon, helium, hydrogen and oxygen ion beams are successfully extracted and transported at a beam divergence due to space charge effect is negligible in the operation pressure of 2 x 10 -5 torr. (author)

A description of stress driven bubble growth of helium implanted tungsten

International Nuclear Information System (INIS)

Sharafat, Shahram; Takahashi, Akiyuki; Nagasawa, Koji; Ghoniem, Nasr

2009-01-01

Low energy (<100 keV) helium implantation of tungsten has been shown to result in the formation of unusual surface morphologies over a large temperature range (700-2100 deg. C). Simulation of these macroscopic phenomena requires a multiscale approach to modeling helium transport in both space and time. We present here a multiscale helium transport model by coupling spatially-resolved kinetic rate theory (KRT) with kinetic Monte Carlo (KMC) simulation to model helium bubble nucleation and growth. The KRT-based HEROS Code establishes defect concentrations as well as stable helium bubble nuclei as a function of implantation parameters and position from the implanted surface and the KMC-based Mc-HEROS Code models the growth of helium bubbles due to migration and coalescence. Temperature- and stress-gradients can act as driving forces, resulting in biased bubble migration. The Mc-HEROS Code was modified to simulate the impact of stress gradients on bubble migration and coalescence. In this work, we report on bubble growth and gas release of helium implanted tungsten W/O stress gradients. First, surface pore densities and size distributions are compared with available experimental results for stress-free helium implantation conditions. Next, the impact of stress gradients on helium bubble evolution is simulated. The influence of stress fields on bubble and surface pore evolution are compared with stress-free simulations. It is shown that near surface stress gradients accelerate helium bubbles towards the free surface, but do not increasing average bubble diameters significantly.

Ion implantation

International Nuclear Information System (INIS)

Dearnaley, Geoffrey

1975-01-01

First, ion implantation in semiconductors is discussed: ion penetration, annealing of damage, gettering, ion implanted semiconductor devices, equipement requirements for ion implantation. The importance of channeling for ion implantation is studied. Then, some applications of ion implantation in metals are presented: study of the corrosion of metals and alloys; influence or ion implantation on the surface-friction and wear properties of metals; hyperfine interactions in implanted metals

High temperature tensile properties of 316 stainless steel implanted with helium

International Nuclear Information System (INIS)

Hasegawa, Akira; Yamamoto, Norikazu; Shiraishi, Haruki

1993-01-01

Helium embrittlement is one of the problems in structural materials for fusion reactors. Recently, martensitic steels have been developed which have a good resistance to high-temperature helium embrittlement, but the mechanism has not yet been clarified. In this paper, tensile behaviors of helium implanted austenitic stainless steels, which are sensitive to the helium embrittlement, were studied and compared with those of martensitic steels under the same experimental conditions, and the effect of microstructure on helium embrittlement was discussed. Helium was implanted by 300 appm at 573-623 K to miniature tensile speciments of 316 austenitic steels using a cyclotron accelerator. Solution annealed (316SA) and 20% cold worked (316CW) specimens were used. Post-implantation tensile tests were carried out at 573, 873 and 973 K. Yield stress at 573 K increased with the helium implantation in 316SA and 316CW, but the yield stress changes of 316SA at 873 and 973 K were different from that of 316CW. Black-dots were observed in the as-implanted specimen and bubbles were observed in the speciments tensile-tested at 873 and 973 K. Intergranular fracture was observed at only 973 K in both of the 316SA and 316CW specimens. Therefore, cold work did not suppress the high-temperature helium embrittlement under this experimental condition. The difference in the influence of helium on type 316 steel and 9Cr martensitic steels were discussed. Test temperature change of reduction in are showed clearly that helium embrittlement did not occur in 9Cr martensitic steels but occurred in 316 austenitic steels. Fine microstructures of 9Cr martensitic steels should suppress helium embrittlement at high temperatures. (author)

Helium mobility in advanced nuclear ceramics

International Nuclear Information System (INIS)

Agarwal, Shradha

2014-01-01

The main goal of this work is to improve our knowledge on the mechanisms able to drive the helium behaviour in transition metal carbides and nitrides submitted to thermal annealing or ion irradiation. TiC, TiN and ZrC polycrystals were implanted with 3 MeV 3 He ions at room temperature in the fluence range 2 * 10 15 et 6 * 10 16 cm -2 . Some of them have been pre-irradiated with self-ions (14 MeV Ti or Zr). Fully controlled thermal annealing tests were subsequently carried out in the temperature range 1000 - 1600 C for two hours. The evolution of the helium depth distribution in function of implantation dose, temperature and pre-irradiation dose was measured thanks to the deuteron-induced nuclear reaction 3 He(d, p 0 ) 4 He between 900 keV and 1.8 MeV. The microstructure of implanted and annealed samples was investigated by transmission electron microscopy on thin foils prepared using the FIB technique. Additional characterization tools, as X-ray diffraction and Raman microspectrometry, have been also applied in order to obtain complementary information. Among the most relevant results obtained, the following have to be outlined: - double-peak helium depth profile was measured on as implanted sample for the three compounds. The first peak is located near the end of range and includes the major part of helium, a second peak located close to the surface corresponds to the helium atoms trapped by the native vacancies; - the helium retention capacity in transition metal carbides and nitrides submitted to fully controlled thermal treatments varies according to ZrC 0.92 ≤ TiC 0.96 ≤ TiN 0.96 ; - whatever the investigated material, a self-ion-induced pre-damaging does not modify the initial helium profile extent. The influence of the post-implantation thermal treatment remains preponderant in any case; - the apparent diffusion coefficient of helium is in the range 4 * 10 -18 - 2 * 10 -17 m 2 s -1 in TiC0.96 and 3.5 * 10 -19 - 5.3 * 10 -18 m 2 s -1 in TiN 0.96 between

Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

Science.gov (United States)

Zhang, L.; Heinig, N. F.; Bazargan, S.; Abd-Ellah, M.; Moghimi, N.; Leung, K. T.

2015-06-01

The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion-Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new ‘bottom-up’ approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation.

Irradiation hardening of Fe–9Cr-based alloys and ODS Eurofer: Effect of helium implantation and iron-ion irradiation at 300 °C including sequence effects

Energy Technology Data Exchange (ETDEWEB)

Heintze, C. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Bergner, F., E-mail: f.bergner@hzdr.de [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany); Hernández-Mayoral, M. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Kögler, R.; Müller, G.; Ulbricht, A. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden (Germany)

2016-03-15

Single-beam, dual-beam and sequential iron- and/or helium-ion irradiations are widely accepted to emulate more application-relevant but hardly accessible irradiation conditions of generation-IV fission and fusion candidate materials for certain purposes such as material pre-selection, identification of basic mechanisms or model calibration. However, systematic investigations of sequence effects capable to critically question individual approaches are largely missing. In the present study, sequence effects of iron-ion irradiations at 300 °C up to 5 dpa and helium implantations up to 100 appm He are investigated by means of post-irradiation nanoindentation of an Fe9%Cr model alloy, ferritic/martensitic 9%Cr steels T91 and Eurofer97 and oxide dispersion strengthened (ODS) Eurofer. Different types of sequence effects, both synergistic and antagonistic, are identified and tentative interpretations are suggested. It is found that different accelerated irradiation approaches have a great impact on the mechanical hardening. This stresses the importance of experimental design in attempts to emulate in-reactor conditions. - Highlights: • The single-beam He-ion implantations do not give rise to significant hardening. • The single-beam Fe-ion irradiations give rise to significant hardening, ΔH{sub Fe}. • Hardening due to sequential He-/Fe-ion irradiation is smaller than ΔH{sub Fe}. • Hardening due to simultaneous He-/Fe-ion irradiation is larger than ΔH{sub Fe}. • The He–Fe synergism for ODS-Eurofer is less pronounced than for Eurofer97.

Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

International Nuclear Information System (INIS)

Zhang, L; Heinig, N F; Bazargan, S; Abd-Ellah, M; Moghimi, N; Leung, K T

2015-01-01

The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion–Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new ‘bottom-up’ approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation. (paper)

Helium accumulation and bubble formation in FeCoNiCr alloy under high fluence He+ implantation

Science.gov (United States)

Chen, Da; Tong, Y.; Li, H.; Wang, J.; Zhao, Y. L.; Hu, Alice; Kai, J. J.

2018-04-01

Face-centered cubic (FCC) high-entropy alloys (HEA), as emerging alloys with equal-molar or near equal-molar constituents, show a promising radiation damage resistance under heavy ion bombardment, making them potential for structural material application in next-generation nuclear reactors, but the accumulation of light helium ions, a product of nuclear fission reaction, has not been studied. The present work experimentally studied the helium accumulation and bubble formation at implantation temperatures of 523 K, 573 K and 673 K in a homogenized FCC FeCoNiCr HEA, a HEA showing excellent radiation damage resistance under heavy ion irradiation. The size and population density of helium bubbles in FeCoNiCr samples were quantitatively analyzed through transmission electron microscopy (TEM), and the helium content existing in bubbles were estimated from a high-pressure Equation of State (EOS). We found that the helium diffusion in such condition was dominated by the self-interstitial/He replacement mechanism, and the corresponding activation energy in FeCoNiCr is comparable with the vacancy migration energy in Ni and austenitic stainless steel but only 14.3%, 31.4% and 51.4% of the accumulated helium precipitated into helium bubbles at 523 K, 573 K and 673 K, respectively, smaller than the pure Ni case. Importantly, the small bubble size suggested that FeCoNiCr HEA has a high resistance of helium bubble formation compared with Ni and steels.

Behaviour of helium after implantation in molybdenum

International Nuclear Information System (INIS)

Viaud, C.; Maillard, S.; Carlot, G.; Valot, C.; Gilabert, E.; Sauvage, T.; Peaucelle, C.; Moncoffre, N.

2009-01-01

This study deals with the behaviour of helium in a molybdenum liner dedicated to the retention of fission products. More precisely this work contributes to evaluate the release of implanted helium when the gas has precipitated into nanometric bubbles close to the free surface. A simple model dedicated to calculate the helium release in such a condition is presented. The specificity of this model lays on the assumption that the gas is in equilibrium with a simple distribution of growing bubbles. This effort is encouraging since the calculated helium release fits an experimental dataset with a set of parameters in good agreement with the literature

Investigation of helium-induced embrittlement

International Nuclear Information System (INIS)

Sabelova, V.; Slugen, V.; Krsjak, V.

2014-01-01

In this work, the hardness of Fe-9%(wt.) Cr binary alloy implanted by helium ions up to 1000 nm was investigated. The implantations were performed using linear accelerator at temperatures below 80 grad C. Isochronal annealing up to 700 grad C with the step of 100 grad C was applied on the helium implanted samples in order to investigate helium induced embrittlement of material. Obtained results were compared with theoretical calculations of dpa profiles. Due to the results, the nano-hardness technique results to be an appropriate approach to the hardness determination of thin layers of implanted alloys. Both, experimental and theoretical calculation techniques (SRIM) show significant correlation of measured results of induced defects. (authors)

Fission neutron irradiation of copper containing implanted and transmutation produced helium

DEFF Research Database (Denmark)

Singh, B.N.; Horsewell, A.; Eldrup, Morten Mostgaard

1992-01-01

High purity copper containing approximately 100 appm helium was produced in two ways. In the first, helium was implanted by cyclotron at Harwell at 323 K. In the second method, helium was produced as a transmutation product in 800 MeV proton irradiation at Los Alamos, also at 323 K. The distribut......High purity copper containing approximately 100 appm helium was produced in two ways. In the first, helium was implanted by cyclotron at Harwell at 323 K. In the second method, helium was produced as a transmutation product in 800 MeV proton irradiation at Los Alamos, also at 323 K...... as well as the effect of the presence of other transmutation produced impurity atoms in the 800 MeV proton irradiated copper will be discussed....

Interface strength of SiC/SiC composites with and without helium implantation using micro-indentation test

International Nuclear Information System (INIS)

Saito, M.; Ohtsuka, S.

1998-01-01

Helium implantation effects on interface strength of SiC/SiC composite were studied using the micro-indentation fiber push-out method. Helium implantation was carried out with an accelerator at about 400 K. Total amount of implanted helium was approximately 10000 appm. Increase of the fiber push-in load was observed in as-implanted specimen. After post-implantation-annealing at 1673 K for 1 h, the change of the fiber push-in load by helium implantation was not observed. Effects of helium implantation on the interface are discussed. (orig.)

Backscattered Helium Spectroscopy in the Helium Ion Microscope: Principles, Resolution and Applications

NARCIS (Netherlands)

van Gastel, Raoul; Hlawacek, G.; Dutta, S.; Poelsema, Bene

2015-01-01

We demonstrate the possibilities and limitations for microstructure characterization using backscattered particles from a sharply focused helium ion beam. The interaction of helium ions with matter enables the imaging, spectroscopic characterization, as well as the nanometer scale modification of

Effect of helium on swelling and microstructural evolution in ion-irradiated V-15Cr-5Ti alloy

International Nuclear Information System (INIS)

Loomis, B.A.; Kestel, B.J.; Gerber, S.B.; Ayrault, G.

1986-03-01

An investigation was made on the effects of implanted helium on the swelling and microstructural evolution that results from energetic single- and dual-ion irradiation of the V-15Cr-5Ti alloy. Single-ion irradiations were utilized for a simulated production of the irradiation damage that might be expected from neutron irradiation of the alloy in a reactor with a fast neutron energy spectrum (E > 0.1 MeV). Dual-ion irradiations were utilized for a simulated production of the simultaneous creation of helium atoms and irradiation damage in the alloy in the MFR environment. Experimental results are also presented on the radiation-induced segregation of the constituent atoms in the single- and dual-ion irradiated alloy

Raman microprobe measurements of stress in ion implanted materials

Energy Technology Data Exchange (ETDEWEB)

Nugent, K.W.; Prawer, S.; Weiser, P.S.; Dooley, S.P. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1993-12-31

Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

Raman microprobe measurements of stress in ion implanted materials

Energy Technology Data Exchange (ETDEWEB)

Nugent, K W; Prawer, S; Weiser, P S; Dooley, S P [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1994-12-31

Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.

HEATHER - HElium Ion Accelerator for RadioTHERapy

Energy Technology Data Exchange (ETDEWEB)

Taylor, Jordan [Huddersfield U.; Edgecock, Thomas [Huddersfield U.; Green, Stuart [Birmingham U.; Johnstone, Carol [Fermilab

2017-05-01

A non-scaling fixed field alternating gradient (nsFFAG) accelerator is being designed for helium ion therapy. This facility will consist of 2 superconducting rings, treating with helium ions (He²⁺ ) and image with hydrogen ions (H + 2 ). Currently only carbon ions are used to treat cancer, yet there is an increasing interest in the use of lighter ions for therapy. Lighter ions have reduced dose tail beyond the tumour compared to carbon, caused by low Z secondary particles produced via inelastic nuclear reactions. An FFAG approach for helium therapy has never been previously considered. Having demonstrated isochronous acceleration from 0.5 MeV to 900 MeV, we now demonstrate the survival of a realistic beam across both stages.

Chemical effects induced by ion implantation in molecular solids

International Nuclear Information System (INIS)

Foti, G.; Calcagno, L.; Puglisi, O.

1983-01-01

Ion implantation in molecular solids as ice, frozen noble gases, benzene and polymers produces a large amount of new molecules compared to the starting materials. Mass and energy analysis of ejected molecules together with the erosion yield, are discussed for several ion-target combinations at low temperature. The observed phenomena are analyzed in terms of deposited ennergy in electronic and nuclear collisions, for incoming beams, as helium or argon, in the range 10-2000 keV. (orig.)

Applications of ion implantation for modifying the interactions between metals and hydrogen gas

Science.gov (United States)

Musket, R. G.

1989-04-01

Ion implantations into metals have been shown recently to either reduce or enhance interactions with gaseous hydrogen. Published studies concerned with modifications of these interactions are reviewed and discussed in terms of the mechanisms postulated to explain the observed changes. The interactions are hydrogenation, hydrogen permeation, and hydrogen embrittlement. In particular, the results of the reviewed studies are (a) uranium hydriding suppressed by implantation of oxygen and carbon, (b) hydrogen gettered in iron and nickel using implantation of titanium, (c) hydriding of titanium catalyzed by implanted palladium, (d) tritium permeation of 304L stainless steel reduced using selective oxidation of implanted aluminum, and (e) hydrogen attack of a low-alloy steel accelerated by implantation of helium. These studies revealed ion implantation to be an effective method for modifying the interactions of hydrogen gas with metals.

Defects induced by helium implantation in SiC

International Nuclear Information System (INIS)

Oliviero, E.; Barbot, J.F.; Declemy, A.; Beaufort, M.F.; Oliviero, E.

2008-01-01

SiC is one of the considered materials for nuclear fuel conditioning and for the fabrication of some core structures in future nuclear generation reactors. For the development of this advance technology, a fundamental research on this material is of prime importance. In particular, the implantation/irradiation effects have to be understood and controlled. It is with this aim that the structural alterations induced by implantation/irradiation in SiC are studied by different experimental techniques as transmission electron microscopy, helium desorption, X-ray diffraction and Rutherford backscattering spectrometry. In this work, the different types of defects induced by helium implantation in SiC, point or primary defects (obtained at low energy (∼100 eV) until spread defects (obtained at higher energy (until ∼2 MeV)) are exposed. The amorphization/recrystallization and swelling phenomena are presented too. (O.M.)

Preservation and release dose of helium implanted in nanocrystal titanium film

International Nuclear Information System (INIS)

Long Xinggui; Luo Shunzhong; Peng Shuming; Zheng Sixiao; Liu Zhongyang; Wang Peilu; Liao Xiaodong; Liu Ning

2003-01-01

Helium concentration profile, preservation dose and release rate from a nanocrystal titanium film implanted with helium at an energy of 100 keV and dose of 2.2 x 10 18 cm -2 are measured by proton Rutherford backscattering technique in a range from room temperature to 400 degree C. The implanted helium may be stably preserved up to the 68 percent after keeping a long time of 210 d in the nanocrystal titanium film at the room temperature environment, and the He-Ti atomic ratio reaches to 52.6%. When the temperature of specimen increases to 100 degree C, the helium concentration can be preserved to 89.6% of the keeping helium dose at room temperature and He-Ti atomic ratio reaches 44%. Even if the specimen temperature up to 400 degree C, the helium concentration still can be preserved to 32.6% of the keeping helium dose at room temperature and the He-Ti atomic ratio is 17.1%. Possible mechanism of helium effectively preserved in the nanocrystal titanium film is discussed based on the energy stability viewpoint

Applications of ion implantation for modifying the interactions between metals and hydrogen gas

International Nuclear Information System (INIS)

Musket, R.G.

1989-01-01

Ion implantations into metals have been shown recently to either reduce or enhance interactions with gaseous hydrogen. Published studies concerned with modifications of these interactions are reviewed and discussed in terms of the mechanisms postulated to explain the observed changes. The interactions are hydrogenation, hydrogen permeation and hydrogen embrittlement. In particular, the results of the reviewed studies are 1. uranium hydriding suppressed by implantation of oxygen and carbon, 2. hydrogen gettered in iron and nickel using implantation of titanium, 3. hydriding of titanium catalyzed by implanted palladium, 4. tritium permeation of 304L stainless steel reduced using selective oxidation of implanted aluminum, and 5. hydrogen attack of a low-alloy steel accelerated by implantation of helium. These studies revealed ion implantation to be an effective method for modifying the interactions of hydrogen gas with metals. (orig.)

Ion implantation

International Nuclear Information System (INIS)

Johnson, E.

1986-01-01

It is the purpose of the present paper to give a review of surface alloy processing by ion implantation. However, rather than covering this vast subject as a whole, the survey is confined to a presentation of the microstructures that can be found in metal surfaces after ion implantation. The presentation is limited to alloys processed by ion implantation proper, that is to processes in which the alloy compositions are altered significantly by direct injection of the implanted ions. The review is introduced by a presentation of the processes taking place during development of the fundamental event in ion implantation - the collision cascade, followed by a summary of the various microstructures which can be formed after ion implantation into metals. This is compared with the variability of microstructures that can be achieved by rapid solidification processing. The microstructures are subsequently discussed in the light of the processes which, as the implantations proceed, take place during and immediately after formation of the individual collision cascades. These collision cascades define the volumes inside which individual ions are slowed down in the implanted targets. They are not only centres for vigorous agitation but also the sources for formation of excess concentrations of point defects, which will influence development of particular microstructures. A final section presents a selection of specific structures which have been observed in different alloy systems. (orig./GSCH)

Study of UO2 mechanical behaviour implanted with helium ions using X-ray micro-diffraction and mechanical modeling

International Nuclear Information System (INIS)

Ibrahim, Marcelle

2015-01-01

In order to study the mechanical behavior of nuclear fuel during direct long term storage, UO 2 polycrystals were implanted with Helium ions at a thin surface layer (1 μm approximately), which leads to stress and strain fields in the layer. Strains were measured, at the grains scale, by X-ray micro-diffraction, using synchrotron radiation (ESRF). Image analysis methods were developed for an automatic analysis of the large number of diffraction patterns. Applying statistical tools to Laue patterns allows an automatic detection of low quality images, and enhances the measurement precision. At low layer thickness, the mechanical interaction between grains can be neglected. At higher thickness, experimental results showed a higher mechanical interaction near grain boundaries that can be modeled using finite elements method. Geostatistical tools were used to quantify these interactions. The swelling and the elastic constants in the implanted layer can be estimated through the measured strains on a large number of grains with different orientations. This work allows the determination of the swelling of nuclear fuel in irradiation conditions, as well as the modification of its elastic properties. (author) [fr

Homo-epitaxial diamond film growth on ion implanted diamond substrates

Energy Technology Data Exchange (ETDEWEB)

Weiser, P S; Prawer, S; Nugent, K W; Bettiol, A A; Kostidis, L I; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

Energy Technology Data Exchange (ETDEWEB)

Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

Homo-epitaxial diamond film growth on ion implanted diamond substrates

International Nuclear Information System (INIS)

Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N.

1996-01-01

The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 μm 2 . After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs

Radioactive ions and atoms in superfluid helium

NARCIS (Netherlands)

Dendooven, P.G.; Purushothaman, S.; Gloos, K.; Aysto, J.; Takahashi, N.; Huang, W.; Harissopulos, S; Demetriou, P; Julin, R

2006-01-01

We are investigating the use of superfluid helium as a medium to handle and manipulate radioactive ions and atoms. Preliminary results on the extraction of positive ions from superfluid helium at temperatures close to 1 K are described. Increasing the electric field up to 1.2 kV/cm did not improve

Effect of helium on void formation in nickel

International Nuclear Information System (INIS)

Brimhall, J.L.; Simonen, E.P.

1977-01-01

This study examines the influence of helium on void formation in self-ion irradiated nickel. Helium was injected either simultaneously with, or prior to, the self-ion bombardment. The void microstructure was characterized as a function of helium deposition rate and the total heavy-ion dose. In particular, at 575 0 C and 5 X 10 -3 displacements per atom per second the void density is found to be proportional to the helium deposition rate. The dose dependence of swelling is initially dominated by helium driven nucleation. The void density rapidly saturates after which swelling continues with increasing dose only from void growth. It is concluded that helium promotes void nucleation in nickel with either helium implantation technique, pre-injection or simultaneous injection. Qualitative differences, however, are recognized. (Auth.)

Modeling Space-Time Dependent Helium Bubble Evolution in Tungsten Armor under IFE Conditions

International Nuclear Information System (INIS)

Qiyang Hu; Shahram Sharafat; Nasr Ghoniem

2006-01-01

The High Average Power Laser (HAPL) program is a coordinated effort to develop Laser Inertial Fusion Energy. The implosion of the D-T target produces a spectrum of neutrons, X-rays, and charged particles, which arrive at the first wall (FW) at different times within about 2.5 μs at a frequency of 5 to 10 Hz. Helium is one of several high-energy charged particle constituents impinging on the candidate tungsten armored low activation ferritic steel First Wall. The spread of the implanted debris and burn helium energies results in a unique space-time dependent implantation profile that spans about 10 μm in tungsten. Co-implantation of X-rays and other ions results in spatially dependent damage profiles and rapid space-time dependent temperature spikes and gradients. The rate of helium transport and helium bubble formation will vary significantly throughout the implanted region. Furthermore, helium will also be transported via the migration of helium bubbles and non-equilibrium helium-vacancy clusters. The HEROS code was developed at UCLA to model the spatial and time-dependent helium bubble nucleation, growth, coalescence, and migration under transient damage rates and transient temperature gradients. The HEROS code is based on kinetic rate theory, which includes clustering of helium and vacancies, helium mobility, helium-vacancy cluster stability, cavity nucleation and growth and other microstructural features such as interstitial loop evolution, grain boundaries, and precipitates. The HEROS code is based on space-time discretization of reaction-diffusion type equations to account for migration of mobile species between neighboring bins as single atoms, clusters, or bubbles. HAPL chamber FW implantation conditions are used to model helium bubble evolution in the implanted tungsten. Helium recycling rate predictions are compared with experimental results of helium ion implantation experiments. (author)

Ion source based on Penning discharge for production of doubly charged helium ions

Directory of Open Access Journals (Sweden)

V. I. Voznyi

2017-11-01

Full Text Available The article presents the results of operation of ion source with Penning discharge developed in the IAP of NAS of Ukraine to produce doubly charged helium ions He2+ beam and to increase the energy of accelerated ions up to 3.2 MeV. This energy is necessary for ERDA channel when measuring hydrogen concentration in the structural materials used in nuclear engineering. The ion source parameters are the following: discharge voltage is 6 kV, discharge current is 0.8 - 1.2 mA, the current of singly charged helium ions He+ 24 μA, the current of doubly charged helium ions He2+ 0.5 μA.

Helium-induced hardening effect in polycrystalline tungsten

Science.gov (United States)

Kong, Fanhang; Qu, Miao; Yan, Sha; Zhang, Ailin; Peng, Shixiang; Xue, Jianming; Wang, Yugang

2017-09-01

In this paper, helium induced hardening effect of tungsten was investigated. 50 keV He2+ ions at fluences vary from 5 × 1015 cm-2 to 5 × 1017 cm-2 were implanted into polycrystalline tungsten at RT to create helium bubble-rich layers near the surface. The microstructure and mechanical properties of the irradiated specimens were studied by TEM and nano-indentor. Helium bubble rich layers are formed in near surface region, and the layers become thicker with the rise of fluences. Helium bubbles in the area of helium concentration peak are found to grow up, while the bubble density is almost unchanged. Obvious hardening effect is induced by helium implantation in tungsten. Micro hardness increases rapidly with the fluence firstly, and more slowly when the fluence is above 5 × 1016 cm-2. The hardening effect of tungsten can be attributed to helium bubbles, which is found to be in agreement with the Bacon-Orowan stress formula. The growing diameter is the major factor rather than helium bubbles density (voids distance) in the process of helium implantation at fluences below 5 × 1017 cm-2.

High temperature indentation of helium-implanted tungsten

Energy Technology Data Exchange (ETDEWEB)

Gibson, James S.K.-L., E-mail: james.gibson@materials.ox.ac.uk [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom); Roberts, Steve G. [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom); Culham Centre for Fusion Energy, Culham Science Centre, Abingdon OX14 3DB (United Kingdom); Armstrong, David E.J. [Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH (United Kingdom)

2015-02-11

Nanoindentation has been performed on tungsten, unimplanted and helium-implanted to ~600 appm, at temperatures up to 750 °C. The hardening effect of the damage was 0.90 GPa at 50 °C, but is negligible above 450 °C. The hardness value at a given temperature did not change on re-testing after heating to 750 °C. This suggests that the helium is trapped in small vacancy complexes that are stable to at least 750 °C, but which can be bypassed due to increased dislocation mobility (cross slip or climb) above 450 °C.

Quantitative ion implantation

International Nuclear Information System (INIS)

Gries, W.H.

1976-06-01

This is a report of the study of the implantation of heavy ions at medium keV-energies into electrically conducting mono-elemental solids, at ion doses too small to cause significant loss of the implanted ions by resputtering. The study has been undertaken to investigate the possibility of accurate portioning of matter in submicrogram quantities, with some specific applications in mind. The problem is extensively investigated both on a theoretical level and in practice. A mathematical model is developed for calculating the loss of implanted ions by resputtering as a function of the implanted ion dose and the sputtering yield. Numerical data are produced therefrom which permit a good order-of-magnitude estimate of the loss for any ion/solid combination in which the ions are heavier than the solid atoms, and for any ion energy from 10 to 300 keV. The implanted ion dose is measured by integration of the ion beam current, and equipment and techniques are described which make possible the accurate integration of an ion current in an electromagnetic isotope separator. The methods are applied to two sample cases, one being a stable isotope, the other a radioisotope. In both cases independent methods are used to show that the implantation is indeed quantitative, as predicted. At the same time the sample cases are used to demonstrate two possible applications for quantitative ion implantation, viz. firstly for the manufacture of calibration standards for instrumental micromethods of elemental trace analysis in metals, and secondly for the determination of the half-lives of long-lived radioisotopes by a specific activity method. It is concluded that the present study has advanced quantitative ion implantation to the state where it can be successfully applied to the solution of problems in other fields

Flaking and wave-like structure on metallic glasses induced by MeV-energy helium ions

International Nuclear Information System (INIS)

Paszti, F.; Fried, M.; Pogany, L.; Manuaba, A.; Mezey, G.; Kotai, E.; Lovas, I.; Lohner, T.; Pocs, L.

1982-11-01

Ten samples prepared from different kinds of metallic glasses (different in composition and manufacturing technology) were bombarded by 2 or 1 MeV helium ions with high fluence under different experimental circumstances. During bombardment the temperature increase of the samples caused by irradiation heating was estimated and kept below the temperature needed for the investigated metallic glass to be crystallized. In all cases the surface deformation processes were dominated by flaking i.e. nearly from the whole implanted area a layer suddenly flaked off with a uniform thickness of the applied ion projected range. The surface left behind the flaked layer can be characterized by a wave-like structure i.e. by a regular series of asymmetrical elevations. These elevations, which did not appear on the annealed samples, are caused by a mechanism developed during the bombardment of the amorphous structure (of metallic glasses) by high energy helium ions. Details of this unusual phenomenon are discussed. (author)

Observation of visible emission from the molecular helium ion in the afterglow of a dense helium Z-pinch plasma

International Nuclear Information System (INIS)

Tucker, J.E.; Brake, M.L.; Gilgenbach, R.M.

1986-01-01

The authors present the results of axial and radial time resolved visible emission spectroscopy from the afterglow of a dense helium Z-pinch. These results show that the visible emissions in the pinch afterglow are dominated by line emissions from molecular helium and He II. Axial spectroscopy measurements show the occurrence of several absorption bands which cannot be identified as molecular or atomic helium nor impurities from the discharge chamber materials. The authors believe that these absorption bands are attributable to the molecular helium ion which is present in the discharge. The molecular ion has been observed by others in low pressure and temperature helium discharges directly by means of mass spectrometry and indirectly by the presence of helium atoms in the 2/sup 3/S state, (the He 2/sup 3/S state is believed to result from molecular helium ion recombination). However, the molecular helium ion has not previously been observed spectroscopically

Structure of ion-implanted ceramics

International Nuclear Information System (INIS)

Naramoto, Hiroshi

1983-01-01

The variation of structure of LiF, MgO, Al 2 O 3 and TiO 2 accompanying annealing after ion implantation is explained. The analysis of structure is usually made by the perturbed gamma ray angular correlation, the internal electron Moessbauer method, or the ion scattering method. The results of analyses are discussed for alkali ion implantation, Fe-ion implantation, In-ion implantation, Au-ion implantation, Pt-ion implantation, Pb-ion implantation and transition metal ion implantation. The coupling of the implanted elements with lattice defects and matrix elements, and the compatibility between deposited elements and matrix crystal lattice were studied. The variation of physical properties due to ion implantation such as phase transition, volume change, the control of single crystal region, and the variation of hardness near surface were investigated, and the examples are presented. (Kato, T.)

Helium trapping in aluminum and sintered aluminum powders

International Nuclear Information System (INIS)

Das, S.K.; Kaminsky, M.; Rossing, T.

1975-01-01

The surface erosion of annealed aluminum and of sintered aluminum powder (SAP) due to blistering from implantation of 100-keV 4 He + ions at room temperature has been investigated. A substantial reduction in the blistering erosion rate in SAP was observed from that in pure annealed aluminum. In order to determine whether the observed reduction in blistering is due to enhanced helium trapping or due to helium released, the implanted helium profiles in annealed aluminum and in SAP have been studied by Rutherford backscattering. The results show that more helium is trapped in SAP than in aluminum for identical irradiation conditions. The observed reduction in erosion from helium blistering in SAP is more likely due to the dispersion of trapped helium at the large Al-Al 2 O 3 interfaces and at the large grain boundaries in SAP than to helium release

Hydrogen retention properties of polycrystalline tungsten and helium irradiated tungsten

International Nuclear Information System (INIS)

Hino, T.; Koyama, K.; Yamauchi, Y.; Hirohata, Y.

1998-01-01

The hydrogen retention properties of a polycrystalline tungsten and tungsten irradiated by helium ions with an energy of 5 keV were examined by using an ECR ion irradiation apparatus and a technique of thermal desorption spectroscopy, TDS. The polycrystalline tungsten was irradiated at RT with energetic hydrogen ions, with a flux of 10 15 H cm -2 and an energy of 1.7 keV up to a fluence of 5 x 10 18 H cm -2 . Subsequently, the amount of retained hydrogen was measured by TDS. The heating temperature was increased from RT to 1000 C, and the heating rate was 50 C min -1 . Below 1000 C, two distinct hydrogen desorption peaks were observed at 200 C and 400 C. The retained amount of hydrogen was observed to be five times smaller than that of graphite, but the concentration in the implantation layer was comparable with that of graphite. Also, the polycrystalline tungsten was irradiated with 5 keV helium ions up to a fluence of 1.4 x 10 18 He cm -2 , and then re-irradiated with 1.7 keV hydrogen ions. The amount of retained hydrogen in this later experiment was close to the value in the case without prior helium ion irradiation. However, the amount of hydrogen which desorbed around the low temperature peak, 200 C, was largely enhanced. The desorption amount at 200 C saturated for the helium fluence of more than 5 x 10 17 He cm -2 . The present data shows that the trapping state of hydrogen is largely changed by the helium ion irradiation. Additionally, 5 keV helium ion irradiation was conducted on a sample pre-implanted with hydrogen ions to simulate a helium ion impact desorption of hydrogen retained in tungsten. The amount of the hydrogen was reduced as much as 50%. (orig.)

Optical effects of ion implantation

International Nuclear Information System (INIS)

Townsend, P.D.

1987-01-01

The review concerns the effects of ion implantation that specifically relate to the optical properties of insulators. Topics which are reviewed include: ion implantation, ion range and damage distributions, colour centre production by ion implantation, high dose ion implantation, and applications for integrated optics. Numerous examples are presented of both diagnostic and industrial examples of ion implantation effects in insulators. (U.K.)

Structural changes in a copper alloy due to helium implantation

International Nuclear Information System (INIS)

Moreno, D.; Eliezer, D.

1996-01-01

The most suitable nuclear fusion reaction for energy production occurs between the two heavy hydrogen isotopes, deuterium and tritium. Structural materials in fusion reactors will be exposed to helium implantation over a broad range of energies. The deformation and partial exfoliation of surface layers due to hydrogen isotopes and helium contribute to the total erosion of the first wall. For this reason, one of the most important criteria in the choice of materials for the first wall of fusion reactors is the material's damage resistance. Recent advances in developing nuclear fusion reactors reveal that efficient heat removal from plasma-facing components is very important. Copper and copper alloys are considered an attractive choice for transporting such a high heat flux without thermal damage as they have high thermal conductivity. In the present study the authors report on the structural changes in a copper alloy, due to the helium implantation on the very near surface area, observed by transmission electron microscopy

Effect of implanted helium on tensile properties and hardness of 9% Cr martensitic stainless steels

Science.gov (United States)

Jung, P.; Henry, J.; Chen, J.; Brachet, J.-C.

2003-05-01

Hundred micrometer thick specimens of 9% Cr martensitic steels EM10 and T91 were homogeneously implanted with He 4 to concentrations up to 0.5 at.% at temperatures from 150 to 550 °C. The specimens were tensile tested at room temperature and at the respective implantation temperatures. Subsequently the fracture surfaces were analysed by scanning electron microscopy and some of the specimens were examined in an instrumented hardness tester. The implanted helium caused hardening and embrittlement which both increased with increasing helium content and with decreasing implantation temperature. Fracture surfaces showed intergranular brittle appearance with virtually no necking at the highest implantation doses, when implanted below 250 °C. The present tensile results can be scaled to tensile data after irradiation in spallation sources on the basis of helium content but not on displacement damage. An interpretation of this finding by microstructural examination is given in a companion paper [J. Nucl. Mater., these Proceedings].

Ion implantation technology

CERN Document Server

Downey, DF; Jones, KS; Ryding, G

1993-01-01

Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approach

TEM investigation of the microstructural evolution in nickel during MeV helium implantation

International Nuclear Information System (INIS)

Gadalla, A.A.; Jaeger, W.; Ehrhart, P.

1986-01-01

In a recent TEM investigation of high energy He-implanted copper the low average helium density could be understood by the observation of the coexistence of two types of vacancy agglomerates i.e. relaxed vacancy agglomerates in the form of stacking fault tetrahedra (SFT) and small bubbles. In order to arrive at a more systematic understanding of the evolution of the microstructure during high energy helium implantation we extended these TEM investigations to nickel. Of particular interest was also the minimum implantation dose necessary to precipitate bubbles that are large enough to be visible in the TEM. (orig./RK)

Ion implantation and bio-compatibility

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Yoshiaki; Kusakabe, Masahiro [Sony Corp., Tokyo (Japan). Corporate Research Labs.; Iwaki, Masaya

1992-07-01

Surface modification of polymers by ion implantation has been carried out to control surface properties such as conductivity, wettability, blood and tissue compatibility. Ion implantation into silicone rubber, polystyrene and segmented polyurethane was performed at 150 keV with doses ranging from 1 x 10[sup 15] to 3 x 10[sup 17] ions/cm[sup 2] to improve bio-compatibility. The platelet accumulation on ion implanted silicone rubber decreased and non-thrombogenicity of ion implanted specimens were improved. The ion implanted polystyrene and segmented polyurethane have been found to exhibit remarkably higher adhesion and spreading of endothelial cells compared to the non-implanted case. It is concluded that ion implantation into polymers is effective in controlling their bio-compatibility. (author).

Effects of displacement damage and helium production rates on the nucleation and growth of helium bubbles - Positron annihilation spectroscopy aspects

Science.gov (United States)

Krsjak, Vladimir; Degmova, Jarmila; Sojak, Stanislav; Slugen, Vladimir

2018-02-01

Fe-12 wt% Cr model alloy samples were implanted by 250 keV He2+ ions to three different fluencies (3 × 1017, 9 × 1017 and 1.5 × 1018 cm-2) at T steel samples [1] irradiated in the frame of a two-years irradiation program of the Swiss Spallation Neutron Source. Bi-modal defect distribution represented by two defect components in positron lifetime spectrum reveals two distinct helium bubbles growth mechanisms. While at the lower helium production rate of the spallation environment, the bubbles grow primarily by migration and coalescence, at the high production rates of helium in the implanted samples, the results indicate this growth is driven by Ostwald ripening mechanism. A competitive growth process via emission of interstitial atoms (clusters) is discussed in terms of low-temperature He implantations.

Ion implantation as a method of studying inhomogeneities in superconductors: results for indium films with embedded helium particles

International Nuclear Information System (INIS)

Fogel, N.Ya.; Moshenski, A.A.; Dmitrenko, I.M.

1978-01-01

The paper considers the applicability of ion implantation into superconductors to investigate inhomogeneity effects on their macroscopic properties. Noble-gas-ion implantation into thin superconducting films is shown to be a unique means of systematically studying these effects in a single sample. Data demonstrating the effect of inhomogeneities on the critical current, Isub(c) in the mixed state and phase-transition smearing in He + -ion-irradiated indium films are presented. First, experimental evidence was obtained to support the Larkin-Ovchinnikov theory which relates Isub(c) and the phase-transition smearing to inhomogeneities of the electron-electron interaction constant g(r) and the electron mean free path (r). Results are presented for parallel critical field anomalies in He-implanted indium films which are due to an implantation-induced anisotropy of xi(t). Changes in the critical parameters for the film resulting from the implantation are compared to structural changes. (Auth.)

Biomolecular ions in superfluid helium nanodroplets

Energy Technology Data Exchange (ETDEWEB)

Gonzalez Florez, Ana Isabel

2016-07-01

The function of a biological molecule is closely related to its structure. As a result, understanding and predicting biomolecular structure has become the focus of an extensive field of research. However, the investigation of molecular structure can be hampered by two main difficulties: the inherent complications that may arise from studying biological molecules in their native environment, and the potential congestion of the experimental results as a consequence of the large number of degrees of freedom present in these molecules. In this work, a new experimental setup has been developed and established in order to overcome the afore mentioned limitations combining structure-sensitive gas-phase methods with superfluid helium droplets. First, biological molecules are ionised and brought into the gas phase, often referred to as a clean-room environment, where the species of interest are isolated from their surroundings and, thus, intermolecular interactions are absent. The mass-to-charge selected biomolecules are then embedded inside clusters of superfluid helium with an equilibrium temperature of ∝0.37 K. As a result, the internal energy of the molecules is lowered, thereby reducing the number of populated quantum states. Finally, the local hydrogen bonding patterns of the molecules are investigated by probing specific vibrational modes using the Fritz Haber Institute's free electron laser as a source of infrared radiation. Although the structure of a wide variety of molecules has been studied making use of the sub-Kelvin environment provided by superfluid helium droplets, the suitability of this method for the investigation of biological molecular ions was still unclear. However, the experimental results presented in this thesis demonstrate the applicability of this experimental approach in order to study the structure of intact, large biomolecular ions and the first vibrational spectrum of the protonated pentapeptide leu-enkephalin embedded in helium

Biomolecular ions in superfluid helium nanodroplets

International Nuclear Information System (INIS)

Gonzalez Florez, Ana Isabel

2016-01-01

The function of a biological molecule is closely related to its structure. As a result, understanding and predicting biomolecular structure has become the focus of an extensive field of research. However, the investigation of molecular structure can be hampered by two main difficulties: the inherent complications that may arise from studying biological molecules in their native environment, and the potential congestion of the experimental results as a consequence of the large number of degrees of freedom present in these molecules. In this work, a new experimental setup has been developed and established in order to overcome the afore mentioned limitations combining structure-sensitive gas-phase methods with superfluid helium droplets. First, biological molecules are ionised and brought into the gas phase, often referred to as a clean-room environment, where the species of interest are isolated from their surroundings and, thus, intermolecular interactions are absent. The mass-to-charge selected biomolecules are then embedded inside clusters of superfluid helium with an equilibrium temperature of ∝0.37 K. As a result, the internal energy of the molecules is lowered, thereby reducing the number of populated quantum states. Finally, the local hydrogen bonding patterns of the molecules are investigated by probing specific vibrational modes using the Fritz Haber Institute's free electron laser as a source of infrared radiation. Although the structure of a wide variety of molecules has been studied making use of the sub-Kelvin environment provided by superfluid helium droplets, the suitability of this method for the investigation of biological molecular ions was still unclear. However, the experimental results presented in this thesis demonstrate the applicability of this experimental approach in order to study the structure of intact, large biomolecular ions and the first vibrational spectrum of the protonated pentapeptide leu-enkephalin embedded in helium

Helium retention in krypton ion pre-irradiated nanochannel W film

Science.gov (United States)

Qin, Wenjing; Ren, Feng; Zhang, Jian; Dong, Xiaonan; Feng, Yongjin; Wang, Hui; Tang, Jun; Cai, Guangxu; Wang, Yongqiang; Jiang, Changzhong

2018-02-01

Nanochannel tungsten (W) film is a promising candidate as an alternative to bulk W for use in fusion applications. In previous work it has been shown to have good radiation resistance under helium (He) irradiation. To further understand the influence of the irradiation-induced displacement cascade damage on helium retention behaviour in a fusion environment, in this work, nanochannel W film and bulk W were pre-irradiated by 800 keV Kr2+ ions to the fluence of 2.6  ×  1015 ions cm-2 and subsequently irradiated by 40 keV He+ ions to the fluence of 5  ×  1017 ions cm-2. The Kr2+ ion pre-irradiation greatly increases helium retention in the form of small clusters and retards the formation of large clusters. It can effectively inhibit surface helium blistering under high temperature annealing. Compared with bulk W, no cracks were found in the nanochannel W film post-irradiated by He+ ions at high fluence. The release of helium from the nanochannel W film is more than one order of magnitude higher than that of bulk W whether they are irradiated by single He+ ions or sequentially irradiated by Kr2+ and He+ ions. Moreover, swelling of the bulk W is more serious than that of the nanochannel film. Therefore, nanochannel W film has a higher radiation tolerance performance in the synergistic irradiation.

Extended defects and hydrogen interactions in ion implanted silicon

Science.gov (United States)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

Ion implantation into iron

International Nuclear Information System (INIS)

Iwaki, Masaya

1978-01-01

The distribution of implanted ions in iron, the friction characteristics and the corrosion of iron were studied. The distribution of Ni or Cr ions implanted into mild steel was measured. The accelerated voltage was 150 keV, and the beam current density was about 2 microampere/cm 2 . The measurement was made with an ion microanalyzer. The measured distribution was compared with that of LSS theory. Deep invasion of Ni was seen in the measured distribution. The distribution of Cr ions was different from the distribution calculated by the LSS theory. The relative friction coefficient of mild steel varied according to the dose of implanted Cu or N ions, and to the accelerating voltage. Formation of compound metals on the surfaces of metals by ion-implantation was investigated for the purpose to prevent the corrosion of metals. The resistance of mild steel in which Ni ions were implanted was larger than that of mild steel without any treatment. (Kato, T.)

Thermal release behavior of helium from copper irradiated by He+ ions

International Nuclear Information System (INIS)

Yamauchi, T.; Tokura, S.; Yamanaka, S.; Miyake, M.

1988-01-01

Thermal release behavior of helium from copper irradiated by 20 keV He + ions with a dose of 2x10 15 to 3x10 17 ions/cm 2 has been studied. The shape of the thermal release curves and thew number of helium release peaks strongly depend on the irradiation dose. Results from SEM surface observastion after post-irradiation heating suggested that helium release caused various surface damages such as blistering, flaking, and hole formation. Helium release resulting in small holes was analyzed and helium bubble growth mechanisms are discussed. (orig.)

Ion implantation into diamond

International Nuclear Information System (INIS)

Sato, Susumu

1994-01-01

The graphitization and the change to amorphous state of diamond surface layer by ion implantation and its characteristics are reported. In the diamond surface, into which more than 10 16 ions/cm 2 was implanted, the diamond crystals are broken, and the structure changes to other carbon structure such as amorphous state or graphite. Accompanying this change of structure, the electric conductivity of the implanted layer shows two discontinuous values due to high resistance and low resistance. This control of structure can be done by the temperature of the base during the ion implantation into diamond. Also it is referred to that by the base temperature during implantation, the mutual change of the structure between amorphous state and graphite can be controlled. The change of the electric resistance and the optical characteristics by the ion implantation into diamond surface, the structural analysis by Raman spectroscopy, and the control of the structure of the implanted layer by the base temperature during implantation are reported. (K.I.)

A compact quadrupole ion filter for helium detection

International Nuclear Information System (INIS)

Pereira, E.B.

1981-01-01

A compact quadrupole ion filter was conceived and constructed for optimum performance at the mass four region of the mass spectra. It was primarely designed for geological applications in the measurements of helium of soil-gases. The whole ion filter structure is 15 cm long by 3.5 cm diameter, including ion source and collecting plate. The sensitivity to helium is of the order of 10 - 2 A.torr - 1 measured at a total pressure of 6x10 - 6 torr and resolution 6. The system can be easily adapted to work as a dynamic residual gas analyser for other purposes. (Author) [pt

Deposition, milling, and etching with a focused helium ion beam

NARCIS (Netherlands)

Alkemade, P.F.A.; Veldhoven, E. van

2012-01-01

The recent successful development of the helium ion microscope has produced both a new type of microscopy and a new tool for nanoscale manufacturing. This chapter reviews the first explorations in this new field in nanofabrication. The studies that utilize the Orion helium ion microscope to grow or

Standard Guide for Simulation of Helium Effects in Irradiated Metals

CERN Document Server

American Society for Testing and Materials. Philadelphia

1996-01-01

1.1 This guide provides advice for conducting experiments to investigate the effects of helium on the properties of metals where the technique for introducing the helium differs in some way from the actual mechanism of introduction of helium in service. Simulation techniques considered for introducing helium shall include charged particle implantation, exposure to α-emitting radioisotopes, and tritium decay techniques. Procedures for the analysis of helium content and helium distribution within the specimen are also recommended. 1.2 Two other methods for introducing helium into irradiated materials are not covered in this guide. They are the enhancement of helium production in nickel-bearing alloys by spectral tailoring in mixed-spectrum fission reactors, and isotopic tailoring in both fast and mixed-spectrum fission reactors. These techniques are described in Refs (1-5). Dual ion beam techniques (6) for simultaneously implanting helium and generating displacement damage are also not included here. This lat...

Focal depth measurement of scanning helium ion microscope

International Nuclear Information System (INIS)

Guo, Hongxuan; Itoh, Hiroshi; Wang, Chunmei; Zhang, Han; Fujita, Daisuke

2014-01-01

When facing the challenges of critical dimension measurement of complicated nanostructures, such as of the three dimension integrated circuit, characterization of the focal depth of microscopes is important. In this Letter, we developed a method for characterizing the focal depth of a scanning helium ion microscope (HIM) by using an atomic force microscope tip characterizer (ATC). The ATC was tilted in a sample chamber at an angle to the scanning plan. Secondary electron images (SEIs) were obtained at different positions of the ATC. The edge resolution of the SEIs shows the nominal diameters of the helium ion beam at different focal levels. With this method, the nominal shapes of the helium ion beams were obtained with different apertures. Our results show that a small aperture is necessary to get a high spatial resolution and high depth of field images with HIM. This work provides a method for characterizing and improving the performance of HIM.

Production of negative helium ions

International Nuclear Information System (INIS)

Toledo, A.S. de; Sala, O.

1977-01-01

A negative helium ion source using potassium charge exchange vapor has been developed to be used as an injector for the Pelletron accelerator. 3 He and α beam currents of up to 2μA have been extracted with 75% particle transmission through the machine [pt

Four-body conversion of atomic helium ions

International Nuclear Information System (INIS)

de Vries, C.P.; Oskam, H.J.

1980-01-01

The conversion of atomic helium ions into molecular ions was studied in pure helium and in helium-neon mixtures containing between 0.1 at. % and 50 at. % neon. The experiments showed that the termolecular conversion reaction, He + +2He → He 2 + +He, is augmented by the four-body conversion reaction He + +3He → products, where the products could include either He 2 + or He 3 + ions. Conversion rate coefficients of (5.7 +- 0.8) x 10 -32 cm 6 sec -1 and (2.6 +- 0.4) x 10 -49 cm 9 sec -1 were found for the termolecular and four-body conversion reactions, respectively. In addition, rate coefficients for the following Ne + conversion reactions were measured: Ne + +He+He → (HeNe) + +He, (2.3 +- 0.1) x 10 -32 cm 6 sec -1 ; Ne + +He+Ne → (HeNe) + +Ne or Ne 2 + +He, (8.0 +- 0.8) x 10 -32 cm 6 sec -1 ; and Ne + +Ne+Ne → Ne 2 + +Ne, (5.1 +- 0.3) x 10 -32 cm 6 sec -1 . All rate coefficients are at a gas temperature of 295 K

Ion Implantation of Polymers

DEFF Research Database (Denmark)

Popok, Vladimir

2012-01-01

The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials...... are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...... is put on the low-energy implantation of metal ions causing the nucleation and growth of nanoparticles in the shallow polymer layers. Electrical, optical and magnetic properties of metal/polymer composites are under the discussion and the approaches towards practical applications are overviewed....

Plasma source ion implantation

International Nuclear Information System (INIS)

Conrad, J.R.; Forest, C.

1986-01-01

The authors' technique allows the ion implantation to be performed directly within the ion source at higher currents without ion beam extraction and transport. The potential benefits include greatly increased production rates (factors of 10-1000) and the ability to implant non-planar targets without rastering or shadowing. The technique eliminates the ion extractor grid set, beam raster equipment, drift space and target manipulator equipment. The target to be implanted is placed directly within the plasma source and is biased to a large negative potential so that plasma ions gain energy as they accelerate through the potential drop across the sheath that forms at the plasma boundary. Because the sheath surrounds the target on all sides, all surfaces of the target are implanted without the necessity to raster the beam or to rotate the target. The authors have succeeded in implanting nitrogen ions in a silicon target to the depths and concentrations required for surface treatment of materials like stainless steel and titanium alloys. They have performed ESCA measurements of the penetration depth profile of a silicon target that was biased to 30 kV in a nitrogen discharge plasma. Nitrogen ions were implanted to a depth of 700A at a peak concentration of 30% atomic. The measured profile is quite similar to a previously obtained profile in titanium targets with conventional techniques

Helium implanted RAFM steels studied by positron beam Doppler Broadening and Thermal Desorption Spectroscopy

International Nuclear Information System (INIS)

Carvalho, I; Schut, H; Fedorov, A; Luzginova, N; Desgardin, P; Sietsma, J

2013-01-01

Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To mimic neutron irradiation conditions, Eurofer97 samples were implanted with helium ions at energies of 500 keV and 2 MeV and doses of 5x10 15 -10 16 He /cm 2 , creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). The DB data could be fitted with one or two layers of material, depending on the He implantation energy. The S and W values obtained for the implanted regions suggest the presence of not only vacancy clusters but also positron traps of the type present in a sub-surface region found on the reference sample. The traps found in the implanted layers are expected to be He n V m clusters. For the 2 MeV, 10 16 He/cm 2 implanted sample, three temperature regions can be observed in the TDS data. Peaks below 450 K can be ascribed to He released from vacancies in the neighbourhood of the surface, the phase transition is found at 1180 K and the peak at 1350 K is likely caused by the migration of bubbles.

The Erosion of Frozen Argon by Swift Helium Ions

DEFF Research Database (Denmark)

Besenbacher, F.; Bøttiger, Jørgen; Graversen, O.

1981-01-01

The temperature, energy, and thickness dependence of the erosion rates of frozen argon films when irradiated with 0.1–3 MeV helium ions have been measured. The erosion yields Y are much too high to be explained by the concentional collisional cascade-sputtering theory and are furthermore unequivo......The temperature, energy, and thickness dependence of the erosion rates of frozen argon films when irradiated with 0.1–3 MeV helium ions have been measured. The erosion yields Y are much too high to be explained by the concentional collisional cascade-sputtering theory and are furthermore...... unequivocally associated with electronic processes generated by the bombarding particle. In the present energy region, it is found that Y scales approximately as the electronic stopping power squared, depends on the charge state of the incoming helium ions, and perhaps more important, is independent...

Ion implantation: an annotated bibliography

International Nuclear Information System (INIS)

Ting, R.N.; Subramanyam, K.

1975-10-01

Ion implantation is a technique for introducing controlled amounts of dopants into target substrates, and has been successfully used for the manufacture of silicon semiconductor devices. Ion implantation is superior to other methods of doping such as thermal diffusion and epitaxy, in view of its advantages such as high degree of control, flexibility, and amenability to automation. This annotated bibliography of 416 references consists of journal articles, books, and conference papers in English and foreign languages published during 1973-74, on all aspects of ion implantation including range distribution and concentration profile, channeling, radiation damage and annealing, compound semiconductors, structural and electrical characterization, applications, equipment and ion sources. Earlier bibliographies on ion implantation, and national and international conferences in which papers on ion implantation were presented have also been listed separately

Ion implantation in superconducting niobium and Nb3 Sn thin films: adjustment of Josephson microbridges and SQUID devices

International Nuclear Information System (INIS)

Robic, J.Y.; Piaguet, J.; Duret, D.; Veler, J.C.; Veran, J.L.; Zenatti, D.

1978-01-01

The principles of operation of Josephson junctions and SQUIDS are resumed. An ion implantation technique for the adjustment of the critical current is presented. High quality superconducting thin films were obtained by electron gun evaporation of niobium on heated substrates. Polycrystalline Nb 3 Sn was made by annealing (1000 K, 10 -6 Torr) a multilayer structure of successively evaporated niobium and thin films. Selected ions (helium, neon, argon) were implanted at doses ranging from 10 13 to 10 17 cm -2 . After implantation the critical temperature, the critical current and the normal resistivity were measured on special photoetched geometries. The variations of these electrical properties depend on the nuclear energy loss. The critical temperature of Nb 3 Sn is decreased by ion implantation and can be increased again by a new annealing. The parameters of the ion implantation were defined in order to obtain a critical temperature slightly higher than the operating temperature. The geometries of the microbridges and the implanted areas where then chosen to obtain appropriate criticals currents (approximately 10 μA) at the operating temperature. The obtained microbridges were used as junction elements in superconducting quantum interference devices (SQUID)

IBA studies of helium mobility in nuclear materials revisited

Energy Technology Data Exchange (ETDEWEB)

Trocellier, P., E-mail: patrick.trocellier@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Agarwal, S.; Miro, S. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Vaubaillon, S. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); CEA, INSTN, UEPTN, F-91191 Gif-sur-Yvette (France); Leprêtre, F.; Serruys, Y. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

2015-12-15

The aim of this paper is to point out and to discuss some features extracted from the study of helium migration in nuclear materials performed during the last fifteen years using ion beam analysis (IBA) measurements. The first part of this paper is devoted to a brief description of the two main IBA methods used, i.e. deuteron induced nuclear reaction for {sup 3}He depth profiling and high-energy heavy-ion induced elastic recoil detection analysis for {sup 4}He measurement. In the second part, we provide an overview of the different studies carried out on model nuclear waste matrices and model nuclear reactor structure materials in order to illustrate and discuss specific results in terms of key influence parameters in relation with thermal or radiation activated migration of helium. Finally, we show that among the key parameters we have investigated as able to influence the height of the helium migration barrier, the following can be considered as pertinent: the experimental conditions used to introduce helium (implanted ion energy and implantation fluence), the grain size of the matrix, the lattice cell volume, the Young's modulus, the ionicity degree of the chemical bond between the transition metal atom M and the non-metal atom X, and the width of the band gap.

Ion implantation and amorphous metals

International Nuclear Information System (INIS)

Hohmuth, K.; Rauschenbach, B.

1981-01-01

This review deals with ion implantation of metals in the high concentration range for preparing amorphous layers (>= 10 at%, implantation doses > 10 16 ions/cm 2 ). Different models are described concerning formation of amorphous phases of metals by ion implantation and experimental results are given. The study of amorphous phases has been carried out by the aid of Rutherford backscattering combined with the channeling technique and using transmission electron microscopy. The structure of amorphous metals prepared by ion implantation has been discussed. It was concluded that amorphous metal-metalloid compounds can be described by a dense-random-packing structure with a great portion of metal atoms. Ion implantation has been compared with other techniques for preparing amorphous metals and the adventages have been outlined

Ion implantation in semiconductors

International Nuclear Information System (INIS)

Gusev, V.; Gusevova, M.

1980-01-01

The historical development is described of the method of ion implantation, the physical research of the method, its technological solution and practical uses. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material, ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions. (M.S.)

Ion implantation in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Gusev, V; Gusevova, M

1980-06-01

The historical development of the method of ion implantation, the physical research of the method, its technological solution and practical uses is described. The method is universally applicable, allows the implantation of arbitrary atoms to an arbitrary material and ensures high purity of the doping element. It is linked with sample processing at low temperatures. In implantation it is possible to independently change the dose and energy of the ions thereby affecting the spatial distribution of the ions.

Highly Stripped Ion Sources for MeV Ion Implantation

Energy Technology Data Exchange (ETDEWEB)

Hershcovitch, Ady

2009-06-30

Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

Improvement of helium characteristics using argon in cylindrical ion source

International Nuclear Information System (INIS)

Abdel salam, F.W.; El-Khabeary, H.; Abdel reheem, A.M.; Kassem, N.E.; Ahmed, M.M.

2004-01-01

the discharge characteristics of pure helium gas were measured at different pressures in the range of 10 -4 torr. in order o improve its characteristics, argon gas was added . different percentages of argon gas ,1%,2%,3%,4%,5%,10% and 20% were used at constant values of pressures . Measurements of the efficiency of the cylindrical ion source in case of adding different percentages of argon gas to pure helium gas were made . an optimum value of the output ion beam current was obtained when 2% argon gas was added to pure helium gas . an output ion beam current of 105 μA was obtained at a pressure of 7X10 -4 torr inside the vacuum chamber and discharge current of 0.6 m A

The TEXTOR helium self-pumping experiment: Design, plans, and supporting ion-beam data on helium retention in nickel

International Nuclear Information System (INIS)

Brooks, J.N.; Krauss, A.; Mattas, R.F.; Smith, D.L.; Nygren, R.E.; Doyle, B.L.; McGrath, R.T.; Walsh, D.; Dippel, K.H.; Finken, K.H.

1990-01-01

A proof-of-principle experiment to demonstrate helium self-pumping in a tokamak is being undertaken in TEXTOR. The experiment will use a helium self-pumping module installed in a modified ALT-I limiter head. The module consists of two, ≅ 25x25 cm 2 heated nickel alloy trapping plates, a nickel deposition filament array, and associated diagnostics. Between plasma shots a coating of ≅ 50A nickel will be deposited on the two trapping plates. During a shot helium and hydrogen ions will impinge on the plates through a ≅ 3 cm wide entrance slot. The helium removal capability, due to trapping in the nickel, will be assessed for a variety of plasma conditions. In support of the tokamak experiment, the trapping of helium over a range of ion fluences and surface temperatures, and detrapping during subsequent exposure to hydrogen, were measured in ion beam experiments using evaporated nickel surfaces similar to that expected in TEXTOR. Also, the retention of H and He after exposure of a nickel surface to mixed He/H plasmas has been measured. The results appear favorable, showing high helium trapping (≅ 10-50% He/Ni) and little or no detrapping by hydrogen. The TEXTOR experiment is planned to begin in 1991. (orig.)

The TEXTOR helium self-pumping experiment: Design, plans, and supporting ion-beam data on helium retention in nickel

International Nuclear Information System (INIS)

Brooks, J.N.; Krauss, A.; Mattas, R.F.; Smith, D.L.; Nygren, R.E.; Doyle, B.L.; McGrath, R.T.; Walsh, D.; Dippel, K.H.; Finken, K.H.

1990-01-01

A proof-of-principle experiment to demonstrate helium self-pumping in a tokamak is being undertaken in TEXTOR. The experiment will use a helium self-pumping module installed in a modified ALT-I limiter head. The module consists of two, ∼25 x 25 cm 2 heated nickel alloy trapping plates, a nickel deposition filament array, and associated diagnostics. Between plasma shots a coating of ∼50 angstrom nickel will be deposited on the two trapping plates. During a shot helium and hydrogen ions will impinge on the plates through a ∼3 cm wide entrance slot. The helium removal capability, due to trapping in the nickel, will be assessed for a variety of plasma conditions. In support of the tokamak experiment, the trapping of helium over a range of ion fluences and surface temperatures, and detrapping during subsequent exposure to hydrogen, were measured in ion beam experiments using evaporated nickel surfaces similar to that expected in TEXTOR. Also, the retention of H and He after exposure of a nickel surface to mixed He/H plasmas has bee measured. The results appear favorable, showing high helium trapping (∼10--50% He/Ni) and little or no detrapping by hydrogen. The TEXTOR experiment is planned to begin in 1991. 12 refs., 2 figs., 2 tabs

Helium ion lithography principles and performance

NARCIS (Netherlands)

Drift, E. van der; Maas, D.J.

2012-01-01

Recent developments show that Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam diameter is a promising alternative fabrication technique for high-resolution nanostructures at high pattern densities. Key principles and critical conditions of the technique are explained. From

Crystal orientation effects on helium ion depth distributions and adatom formation processes in plasma-facing tungsten

International Nuclear Information System (INIS)

Hammond, Karl D.; Wirth, Brian D.

2014-01-01

We present atomistic simulations that show the effect of surface orientation on helium depth distributions and surface feature formation as a result of low-energy helium plasma exposure. We find a pronounced effect of surface orientation on the initial depth of implanted helium ions, as well as a difference in reflection and helium retention across different surface orientations. Our results indicate that single helium interstitials are sufficient to induce the formation of adatom/substitutional helium pairs under certain highly corrugated tungsten surfaces, such as (1 1 1)-orientations, leading to the formation of a relatively concentrated layer of immobile helium immediately below the surface. The energies involved for helium-induced adatom formation on (1 1 1) and (2 1 1) surfaces are exoergic for even a single adatom very close to the surface, while (0 0 1) and (0 1 1) surfaces require two or even three helium atoms in a cluster before a substitutional helium cluster and adatom will form with reasonable probability. This phenomenon results in much higher initial helium retention during helium plasma exposure to (1 1 1) and (2 1 1) tungsten surfaces than is observed for (0 0 1) or (0 1 1) surfaces and is much higher than can be attributed to differences in the initial depth distributions alone. The layer thus formed may serve as nucleation sites for further bubble formation and growth or as a source of material embrittlement or fatigue, which may have implications for the formation of tungsten “fuzz” in plasma-facing divertors for magnetic-confinement nuclear fusion reactors and/or the lifetime of such divertors.

Nanostructural evolution and behavior of H and Li in ion-implanted γ-LiAlO 2

Energy Technology Data Exchange (ETDEWEB)

Jiang, Weilin; Zhang, Jiandong; Edwards, Danny J.; Overman, Nicole R.; Zhu, Zihua; Price, Lloyd; Gigax, Jonathan; Castanon, Elizabeth; Shao, Lin; Senor, David J.

2017-10-01

In-situ He+ ion irradiation is performed under a helium ion microscope to study nanostructural evolution in polycrystalline gamma-LiAlO2 pellets. Various locations within a grain, across grain boundaries and at a cavity are selected. The results exhibit He bubble formation, grain-boundary cracking, nanoparticle agglomeration, increasing surface brightness with dose, and material loss from the surface. Similar brightening effects at grain boundaries are also observed under a scanning electron microscope. Li diffusion and loss from polycrystalline gamma-LiAlO2 is faster than its monocrystalline counterpart during H2+ ion implantation at elevated temperatures. There is also more significant H diffusion and release from polycrystalline pellets during thermal annealing of 300 K implanted samples. Grain boundaries and cavities could provide a faster pathway for H and Li diffusion. H release is slightly faster from the 573 K implanted monocrystalline gamma-LiAlO2 during annealing at 773 K. Metal hydrides could be formed preferentially along the grain boundaries to immobilize hydrogen.

Helium ion damage in an amorphous Fe-Ni-Mo-B alloy

International Nuclear Information System (INIS)

Swijgenhoven, H. van; Stals, L.M.; Knuyt, G.

1983-01-01

Data are presented on helium gas bubble and helium blister formation for Metglas 2826MB during 5 keV He + -implantation in the temperature range 200K-600K and dose range 5.10 20 -10 22 He + /m 2 . It is concluded that amorphous alloys are less radiation resistant as has been thought earlier. (author)

Ion Implantation and Synthesis of Materials

CERN Document Server

Nastasi, Michael

2006-01-01

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Ion temperature anisotropy in high power helium neutral beam fuelling experiments in JET

Energy Technology Data Exchange (ETDEWEB)

Maas, A C; Core, W G.F.; Gerstel, U C; Von Hellermann, M G; Koenig, R W.T.; Marcus, F B [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

1994-07-01

During helium beam fuelling experiments in JET, distinctive anisotropic features have been observed in the velocity distribution function describing both fast and thermal alpha particle populations. During the initial fuelling phase the central helium ion temperature observed perpendicular to the magnetic field is higher than the central electron temperature, while the central helium ion temperature observed parallel to the magnetic field is lower than or equal to the central electron temperature. In order to verify temperature measurements of both perpendicular and parallel lines of sight, other independent methods of deducing the ion temperature are investigated: deuterium ion temperature, deuterium density, comparison with neutron rates and profiles (influence of a possible metastable population of helium). 6 refs., 7 figs.

Laser Induced Fluorescence of Helium Ions in a Helicon Plasma

Science.gov (United States)

Compton, C. S.; Biloui, C.; Hardin, R. A.; Keesee, A. M.; Scime, E. E.; Boivin, R.

2003-10-01

The lack of a suitable Laser Induced Fluorescence (LIF) scheme for helium ions at visible wavelengths has prevented LIF from being employed in helium plasmas for measurements of ion temperature and bulk ion flow speeds. In this work, we will discuss our attempts to perform LIF of helium ions in a helicon source plasma using an infrared, tunable diode laser operating at 1012.36 nm. The infrared transition corresponds to excitation from the n = 4 level (4f ^2F) to the n = 5 (5g ^2G) level of singly ionized helium and therefore requires substantial electron temperatures (> 10 eV) to maintain an adequate ion population in the n = 4 state. Calculations using a steady state coronal model predict that the n = 4 state population will be 25% larger than the n = 5 population for our experimental conditions. The fluorescence decay from the n = 5 (5f ^2F) level of singly ionized helium level to the n = 3 (3d ^2D) level at 320.31 nm is monitored as the diode laser is swept through 10 GHz around the 1012.36 nm line. Note that the fluorescence emission requires a collisionally coupled transition between two different n = 5 quantum states. We will also present measurements of the emission intensities of both the 1012.36 nm and the 320.31 nm lines as a function of source neutral pressure, rf power, and plasma density. This work supported by the U.S. DoE EPSCoR Lab Partnership Program.

Ion implantation for microelectronics

International Nuclear Information System (INIS)

Dearnaley, G.

1977-01-01

Ion implantation has proved to be a versatile and efficient means of producing microelectronic devices. This review summarizes the relevant physics and technology and assesses the advantages of the method. Examples are then given of widely different device structures which have been made by ion implantation. While most of the industrial application has been in silicon, good progress continues to be made in the more difficult field of compound semiconductors. Equipment designed for the industrial ion implantation of microelectronic devices is discussed briefly. (Auth.)

Blistering in a porous surface layer of materials. [He ion implantation

Energy Technology Data Exchange (ETDEWEB)

Afrikanov, I.N.; Vladimirov, B.G.; Guseva, M.I.; Ivanov, S.M.; Martynenko, Yu.V.; Nikol' skij, Yu.V.; Ryazanov, A.I.

1981-03-01

The effect of porous structure on the nature and rate of radiation erosion during implantation of helium ions into nickel and the OKh15N15M3B stainless steel is studied. The investigation results showed sharp dependence of the erosion rate due to blistering on the dimension and density of pores in the by-surface layer. The rate of the surface erosion increased in one order as compared with the control specimens without pores at 1% swelling for stainless steel and 4% for nickel.

Microstructure and thermomechanical pretreatment effects on creep behaviour of helium-implanted DIN 1.4970 austenitic stainless steel

International Nuclear Information System (INIS)

Matta, M.K.; Kesternich, W.

1990-01-01

Microstructure investigations were carried out on unimplanted and 150 at ppm helium implanted foil specimens of DIN 1.4970 austenitic stainless steel after various thermomechanical pretreatments. Creep test were also carried out for both helium-implanted and unimplanted specimens at 700degC and 800degC. The strength, ductility and rupture time are correalted with the dislocation and precipitate distributions. Helium embrittlement can be reduced in these experiments when dispersive TiC precipitate distributions are produced by proper pretreatments or allowed to form during creep test. (author). 14 refs., 11 figs

Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

International Nuclear Information System (INIS)

Carder, D.A.; Markwitz, A.

2009-01-01

This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

Electrochemical properties of ion implanted silicon

International Nuclear Information System (INIS)

Pham minh Tan.

1979-11-01

The electrochemical behaviour of ion implanted silicon in contact with hydrofluoric acid solution was investigated. It was shown that the implanted layer on silicon changes profoundly its electrochemical properties (photopotential, interface impedance, rest potential, corrosion, current-potential behaviour, anodic dissolution of silicon, redox reaction). These changes depend strongly on the implantation parameters such as ion dose, ion energy, thermal treatment and ion mass and are weakly dependent on the chemical nature of the implantation ion. The experimental results were evaluated and interpreted in terms of the semiconductor electrochemical concepts taking into account the interaction of energetic ions with the solid surface. The observed effects are thus attributed to the implantation induced damage of silicon lattice and can be used for profiling of the implanted layer and the electrochemical treatment of the silicon surface. (author)

High-energy ion implantation of materials

International Nuclear Information System (INIS)

Williams, J.M.

1991-11-01

High-energy ion implantation is an extremely flexible type of surface treatment technique, in that it offers the possibility of treating almost any type of target material or product with ions of almost any chemical species, or combinations of chemical species. In addition, ion implantations can be combined with variations in temperature during or after ion implantation. As a result, the possibility of approaching a wide variety of surface-related materials science problems exists with ion implantation. This paper will outline factors pertinent to application of high-energy ion implantation to surface engineering problems. This factors include fundamental advantages and limitations, economic considerations, present and future equipment, and aspects of materials science

Changes in surface properties caused by ion implantation

International Nuclear Information System (INIS)

Iwaki, Masaya

1987-01-01

This report outlines various aspects of ion implantation. Major features of ion implantation are described first, focusing on the structure of ion implantation equipment and some experimental results of ion implantation into semiconductors. Distribution of components in ion-implantated layers is then discussed. The two major features of ion implantation in relation to the distribution of implanted ions are: (1) high controllability of addition of ions to a surface layer and (2) formation of a large number of lattice defects in a short period of time. Application of ion implantation to metallic materials is expected to permit the following: (1) formation of a semi-stable alloy surface layer by metallic ion implantation, (2) formation of a semi-stable ceramic surface layer or buried layer by non-metallic ion implantation, and (3) formation of a buried layer by combined implementation of a different metallic ion and non-metallic ion. Ion implantation in carbon materials, polymers and ceramics is discussed next. The last part of the report is dedicated to macroscopic properties of an ion-implanted layer, centering on surface modification, formation of a conductive surface layer, and tribology. (Nogami, K.) 60 refs

Radioactive core ions of microclusters, ``snowballs`` in superfluid helium

Energy Technology Data Exchange (ETDEWEB)

Takahashi, N. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Shimoda, T. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Fujita, Y. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Miyatake, H. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Mizoi, Y. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Kobayashi, H. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Sasaki, M. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Shirakura, T. [Osaka Univ., Toyonaka (Japan). Dept. of Physics; Itahashi, T. [Research Center for Nuclear Physics, Osaka Univ., Ibaraki (Japan); Mitsuoka, S. [Research Center for Nuclear Physics, Osaka Univ., Ibaraki (Japan); Matsukawa, T. [Naruto Univ. of Education, Tokushima (Japan); Ikeda, N. [Kyushu Univ., Fukuoka (Japan). Dept. of Physics; Morinobu, S. [Kyushu Univ., Fukuoka (Japan). Dept. of Physics; Hinde, D.J. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences; Asahi, K. [Tokyo Inst. of Tech. (Japan). Dept. of Physics; Ueno, H. [Tokyo Inst. of Tech. (Japan). Dept. of Physics; Izumi, H. [Tokyo Inst. of Tech. (Japan). Dept. of Physics

1996-12-01

Short-lived beta-ray emitters, {sup 12}B, sustaining nuclear spin polarization were introduced into superfluid helium. The nuclear polarization of {sup 12}B was observed via measurement of beta-ray asymmetry. It was found that the nuclear polarization was preserved throughout the lifetime of {sup 12}B (20.3 ms). This suggests that the ``snowball``, an aggregation of helium atoms produced around an alien ion, constitutes a suitable milieu for freezing-out the nuclear spin of the core ion and that most likely the solidification takes place at the interior of the aggregation. (orig.).

Radioactive core ions of microclusters, ''snowballs'' in superfluid helium

International Nuclear Information System (INIS)

Takahashi, N.; Mitsuoka, S.; Matsukawa, T.; Ikeda, N.; Morinobu, S.; Hinde, D.J.; Asahi, K.; Ueno, H.; Izumi, H.

1996-01-01

Short-lived beta-ray emitters, 12 B, sustaining nuclear spin polarization were introduced into superfluid helium. The nuclear polarization of 12 B was observed via measurement of beta-ray asymmetry. It was found that the nuclear polarization was preserved throughout the lifetime of 12 B (20.3 ms). This suggests that the ''snowball'', an aggregation of helium atoms produced around an alien ion, constitutes a suitable milieu for freezing-out the nuclear spin of the core ion and that most likely the solidification takes place at the interior of the aggregation. (orig.)

Long range implantation by MEVVA metal ion source

International Nuclear Information System (INIS)

Zhang Tonghe; Wu Yuguang; Ma Furong; Liang Hong

2001-01-01

Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion implantation. It is very important for research and application of the ion beam modification of materials. The results show that the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux and high dose. The implanted depth is 311.6 times greater than that of the corresponding ion range. The ion species, doses and ion fluxes play an important part in the long-range implantation. Especially, thermal atom chemistry have specific effect on the long-range implantation during high ion flux implantation at transient high target temperature

Material synthesis for silicon integrated-circuit applications using ion implantation

Science.gov (United States)

Lu, Xiang

of microscopic images. The underlying hydrogen profiles for between 250sp°C and 500sp°C annealing are characterized by SIMS and HFS experiments. An ideal gas law model calculation suggests that the internal pressure of molecular hydrogen filled microcavities is in the range of Giga-Pascal, high enough to break the silicon crystal bond. A dose threshold which prevents cleavage is observed at 1.6× 10sp{17} cmsp{-2} for 40 kV hydrogen implantation. A initial defect, in a silicon substrate, induced by a hydrogen microcavity is modeled as a circular crack which is embedded at a certain depth from the top silicon surface. A two-dimensional finite element model is made to calculate energy release rate along the crack surfaces. This numerical model predicts that the energy release rate is sufficient to overcome the silicon fracture toughness. The model further identifies the factors that can enhance the energy release rate. Ion-Cut SOI wafer fabrication technique is implemented using Pm. The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple Pm reactor setup and its compatibility with cluster-tool IC manufacturing system offer other Ion-Cut process optimization opportunities. The feasibility of Pm Ion-Cut process has been demonstrated with successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration, with minimal effect on the Ion-Cut process by the residual ion components. We have also demonstrated the feasibility of performing Ion-Cut using Pm in helium plasma.

Microstructure of HIPed and SPSed 9Cr-ODS steel and its effect on helium bubble formation

International Nuclear Information System (INIS)

Lu, Chenyang; Lu, Zheng; Xie, Rui; Liu, Chunming; Wang, Lumin

2016-01-01

Two 9Cr-ODS steels with the same nominal composition were consolidated by hot isostatic pressing (HIP, named COS-1) and spark plasma sintering (SPS, named COS-2). Helium ions were implanted into COS-1, COS-2 and non-ODS Eurofer 97 steels up at 673 K. Microstructures before and after helium ion implantations were carefully characterized. The results show a bimodal grain size distribution in COS-2 and a more uniform grain size distribution in COS-1. Nanoscale clusters of GP-zone type Y–Ti–O and Y_2Ti_2O_7 pyrochlore as well as large spinel Mn(Ti)Cr_2O_4 particles are all observed in the two ODS steels. The Y–Ti-enriched nano-oxides in COS-1 exhibit higher number density and smaller size than in COS-2. The Y–Ti-enriched nano-oxides in fine grains of COS-2 show higher number density and smaller size than that in coarse grains of COS-2. Nano-oxides effectively trap helium atoms and lead to the formation of high density and ultra-fine helium bubbles. - Highlights: • The microstructure changes of two ODS steels before and after helium ion implantation have been elucidated. • The mechanism of the microstructures of ODS steels under varied thermal mechanical processing paths have been explored. • The dependence of the size, density and distribution of helium bubbles on the specific microstructure features are explored.

Microstructure of HIPed and SPSed 9Cr-ODS steel and its effect on helium bubble formation

Energy Technology Data Exchange (ETDEWEB)

Lu, Chenyang [Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, Liaoning (China); Department of Nuclear Engineering and Radiological Science, University of Michigan, Ann Arbor, MI, 48109 (United States); Lu, Zheng, E-mail: luz@atm.neu.edu.cn [Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, Liaoning (China); Xie, Rui; Liu, Chunming [Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering, Northeastern University, Shenyang 110819, Liaoning (China); Wang, Lumin, E-mail: lmwang@umich.edu [Department of Nuclear Engineering and Radiological Science, University of Michigan, Ann Arbor, MI, 48109 (United States)

2016-06-15

Two 9Cr-ODS steels with the same nominal composition were consolidated by hot isostatic pressing (HIP, named COS-1) and spark plasma sintering (SPS, named COS-2). Helium ions were implanted into COS-1, COS-2 and non-ODS Eurofer 97 steels up at 673 K. Microstructures before and after helium ion implantations were carefully characterized. The results show a bimodal grain size distribution in COS-2 and a more uniform grain size distribution in COS-1. Nanoscale clusters of GP-zone type Y–Ti–O and Y{sub 2}Ti{sub 2}O{sub 7} pyrochlore as well as large spinel Mn(Ti)Cr{sub 2}O{sub 4} particles are all observed in the two ODS steels. The Y–Ti-enriched nano-oxides in COS-1 exhibit higher number density and smaller size than in COS-2. The Y–Ti-enriched nano-oxides in fine grains of COS-2 show higher number density and smaller size than that in coarse grains of COS-2. Nano-oxides effectively trap helium atoms and lead to the formation of high density and ultra-fine helium bubbles. - Highlights: • The microstructure changes of two ODS steels before and after helium ion implantation have been elucidated. • The mechanism of the microstructures of ODS steels under varied thermal mechanical processing paths have been explored. • The dependence of the size, density and distribution of helium bubbles on the specific microstructure features are explored.

Helium desorption in EFDA iron materials for use in nuclear fusion reactors

International Nuclear Information System (INIS)

Salazar R, A. R.; Pinedo V, J. L.; Sanchez, F. J.; Ibarra, A.; Vila, R.

2015-09-01

In this paper the implantation with monoenergetic ions (He + ) was realized with an energy of 5 KeV in iron samples (99.9999 %) EFDA (European Fusion Development Agreement) using a collimated beam, after this a Thermal Desorption Spectrometry of Helium (THeDS) was made using a leak meter that detects amounts of helium of up to 10 - - 12 mbar l/s. Doses with which the implantation was carried out were 2 x 10 15 He + /cm 2 , 1 x 10 16 He + /cm 2 , 2 x 10 16 He + /cm 2 , 1 x 10 17 He + /cm 2 during times of 90 s, 450 s, 900 s and 4500 s, respectively. Also, using the SRIM program was calculated the depth at which the helium ions penetrate the sample of pure ion, finding that the maximum distance is 0.025μm in the sample. For this study, 11 samples of Fe EFDA were prepared to find defects that are caused after implantation of helium in order to provide valuable information to the manufacture of materials for future fusion reactors. However understand the effects of helium in the micro structural evolution and mechanical properties of structural materials are some of the most difficult questions to answer in materials research for nuclear fusion. When analyzing the spectra of THeDS was found that five different groups of desorption peaks existed, which are attributed to defects of He caused in the material, these defects are He n V (2≤n≤6), He n V m , He V for the groups I, II and IV respectively. These results are due to the comparison of the peaks presented in the desorption spectrum of He, with those of other authors who have made theoretical calculations. Is important to note that the thermal desorption spectrum of helium was different depending on the dose with which the implantation of He + was performed. (Author)

Influence of displacement damage on deuterium and helium retention in austenitic and ferritic-martensitic alloys considered for ADS service

Energy Technology Data Exchange (ETDEWEB)

Voyevodin, V.N.; Karpov, S.A.; Kopanets, I.E.; Ruzhytskyi, V.V. [National Science Center “Kharkov Institute of Physics and Technology” Kharkov, 1, Akademicheskaya St., Kharkov, 61108 (Ukraine); Tolstolutskaya, G.D., E-mail: g.d.t@kipt.kharkov.ua [National Science Center “Kharkov Institute of Physics and Technology” Kharkov, 1, Akademicheskaya St., Kharkov, 61108 (Ukraine); Garner, F.A. [Radiation Effects Consulting, Richland, WA (United States)

2016-01-15

The behavior of ion-implanted hydrogen (deuterium) and helium in austenitic 18Cr10NiTi stainless steel, EI-852 ferritic steel and ferritic/martensitic steel EP-450 and their interaction with displacement damage were investigated. Energetic argon irradiation was used to produce displacement damage and bubble formation to simulate nuclear power environments. The influence of damage morphology and the features of radiation-induced defects on deuterium and helium trapping in structural alloys was studied using ion implantation, the nuclear reaction D({sup 3}He,p){sup 4}He, thermal desorption spectrometry and transmission electron microscopy. It was found in the case of helium irradiation that various kinds of helium-radiation defect complexes are formed in the implanted layer that lead to a more complicated spectra of thermal desorption. Additional small changes in the helium spectra after irradiation with argon ions to a dose of ≤25 dpa show that the binding energy of helium with these traps is weakly dependent on the displacement damage. It was established that retention of deuterium in ferritic and ferritic-martensitic alloys is three times less than in austenitic steel at damage of ∼1 dpa. The retention of deuterium in steels is strongly enhanced by presence of radiation damages created by argon ion irradiation, with a shift in the hydrogen release temperature interval of 200 K to higher temperature. At elevated temperatures of irradiation the efficiency of deuterium trapping is reduced by two orders of magnitude.

Biodegradable radioactive implants for glaucoma filtering surgery produced by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Assmann, W. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany)]. E-mail: walter.assmann@lmu.de; Schubert, M. [Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen, 85748 Garching (Germany); Held, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany); Pichler, A. [Augenklinik, Technische Universitaet Muenchen, 81675 Muenchen (Germany); Chill, A. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Kiermaier, S. [Zentralinstitut fuer Medizintechnik, Technische Universitaet Muenchen, 85748 Garching (Germany); Schloesser, K. [Forschungszentrum Karlsruhe, 76021 Karlsruhe (Germany); Busch, H. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Schenk, K. [NTTF GmbH, 53619 Rheinbreitbach (Germany); Streufert, D. [Acri.Tec GmbH, 16761 Hennigsdorf (Germany); Lanzl, I. [Augenklinik, Technische Universitaet Muenchen, 81675 Munich (Germany)

2007-04-15

A biodegradable, {beta}-emitting implant has been developed and successfully tested which prevents fresh intraocular pressure increase after glaucoma filtering surgery. Ion implantation has been used to load the polymeric implants with the {beta}-emitter {sup 32}P. The influence of ion implantation and gamma sterilisation on degradation and {sup 32}P-fixation behavior has been studied by ion beam and chemical analysis. Irradiation effects due to the applied ion fluence (10{sup 15} ions/cm{sup 2}) and gamma dose (25 kGy) are found to be tolerable.

Damage studies on tungsten due to helium ion irradiation

International Nuclear Information System (INIS)

Dutta, N.J.; Buzarbaruah, N.; Mohanty, S.R.

2014-01-01

Highlights: • Used plasma focus helium ion source to study radiation induced damage on tungsten. • Surface analyses confirm formation of micro-crack, bubbles, blisters, pinholes, etc. • XRD patterns confirm development of compressive stress due to thermal load. • Reduction in hardness value is observed in the case of exposed sample. - Abstract: Energetic and high fluence helium ions emitted in a plasma focus device have been used successfully to study the radiation induced damage on tungsten. The reference and irradiated samples were characterized by optical microscopy, field emission scanning electron microscopy, X-ray diffraction and by hardness testers. The micrographs of the irradiated samples at lower magnification show uniform mesh of cracks of micrometer width. However at higher magnification, various types of crystalline defects such as voids, pinholes, bubbles, blisters and microcracks are distinctly noticed. The prominent peaks in X-ray diffraction spectrum of irradiated samples are seen shifted toward higher Bragg angles, thus indicating accumulation of compressive stress due to the heat load delivered by helium ions. A marginal reduction in hardness of the irradiated sample is also noticed

Study of diffusion mechanisms of helium atoms in face-centered cubic metals after α - implantation in a cyclotron

International Nuclear Information System (INIS)

Sciani, V.; Lucki, G.; Jung, P.

1984-01-01

Helium has been homogeneously introduced into gold foils at room temperature by alpha implantation in a CV-28 cyclotron. After implantation the helium release was observed in isothermal and linear heating experiments. The diffusion coefficient follows an Arrhenius behaviour with D sub(o) = 0.1 cm 2 /s and ΔH = 1.7 eV. Possible diffusion mechanisms are discussed. (Author) [pt

Ion Implantation of Calcium and Zinc in Magnesium for Biodegradable Implant Applications

Directory of Open Access Journals (Sweden)

Sahadev Somasundaram

2018-01-01

Full Text Available In this study, magnesium was implanted with calcium-ion and zinc-ion at fluences of 1015, 1016, and 1017 ion·cm−2, and its in vitro degradation behaviour was evaluated using electrochemical techniques in simulated body fluid (SBF. Rutherford backscattering spectrometry (RBS revealed that the implanted ions formed layers within the passive magnesium-oxide/hydroxide layers. Electrochemical impedance spectroscopy (EIS results demonstrated that calcium-ion implantation at a fluence of 1015 ions·cm−2 increased the polarisation resistance by 24%, but higher fluences showed no appreciable improvement. In the case of zinc-ion implantation, increase in the fluence decreased the polarisation resistance. A fluence of 1017 ion·cm−2 decreased the polarisation resistance by 65%, and fluences of 1015 and 1016 showed only marginal effect. Similarly, potentiodynamic polarisation results also suggested that low fluence of calcium-ion decreased the degradation rate by 38% and high fluence of zinc-ion increased the degradation rate by 61%. All the post-polarized ion-implanted samples and the bare metal revealed phosphate and carbonate formation. However, the improved degradative behaviour in calcium-ion implanted samples can be due to a relatively better passivation, whereas the reduction in degradation resistance in zinc-ion implanted samples can be attributed to the micro-galvanic effect.

Endothelial cell adhesion to ion implanted polymers

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Y; Kusakabe, M [SONY Corp., Tokyo (Japan); Lee, J S; Kaibara, M; Iwaki, M; Sasabe, H [RIKEN (Inst. of Physical and Chemical Research), Saitama (Japan)

1992-03-01

The biocompatibility of ion implanted polymers has been studied by means of adhesion measurements of bovine aorta endothelial cells in vitro. The specimens used were polystyrene (PS) and segmented polyurethane (SPU). Na{sup +}, N{sub 2}{sup +}, O{sub 2}{sup +} and Kr{sup +} ion implantations were performed at an energy of 150 keV with fluences ranging from 1x10{sup 15} to 3x10{sup 17} ions/cm{sup 2} at room temperature. The chemical and physical structures of ion-implanted polymers have been investigated in order to analyze their tissue compatibility such as improvement of endothelial cell adhesion. The ion implanted SPU have been found to exhibit remarkably higher adhesion and spreading of endothelial cells than unimplanted specimens. By contrast, ion implanted PS demonstrated a little improvement of adhesion of cells in this assay. Results of FT-IR-ATR showed that ion implantation broke the original chemical bond to form new radicals such as OH, ....C=O, SiH and condensed rings. The results of Raman spectroscopy showed that ion implantation always produced a peak near 1500 cm{sup -1}, which indicated that these ion implanted PS and SPU had the same carbon structure. This structure is considered to bring the dramatic increase in the extent of cell adhesion and spreading to these ion implanted PS and SPU. (orig.).

Low energy helium ion irradiation induced nanostructure formation on tungsten surface

International Nuclear Information System (INIS)

Al-Ajlony, A.; Tripathi, J.K.; Hassanein, A.

2017-01-01

We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10 24 –1.6 × 10 25 ions m −2 ), and flux (2.0 × 10 20 –5.5 × 10 20 ion m −2 s −1 ). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

The JANNUS Saclay facility: A new platform for materials irradiation, implantation and ion beam analysis

Energy Technology Data Exchange (ETDEWEB)

Pellegrino, S., E-mail: stephanie.pellegrino@cea.fr [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Trocellier, P.; Miro, S.; Serruys, Y.; Bordas, E.; Martin, H. [CEA, DEN, Service de Recherches de Metallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Chaabane, N.; Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Gallien, J.P.; Beck, L. [CEA, DEN, Service de Recherches de Metallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

2012-02-15

The third accelerator of the multi-ion irradiation platform JANNUS (Joint Accelerators for Nanosciences and NUclear Simulation), a 6SDH-2 Pelletron from National Electrostatic Corporation, Middleton was installed at Saclay in October 2009. The first triple beam irradiation combining Fe, He and H ion beams has been performed in March 2010. In the first part of this paper, we give a technical description of the triple beam facility, its performances and experimental capabilities. Typically, damage dose up to 100 dpa can be reached in 10 h irradiation with heavy ion beams, with or without simultaneous bombardment by protons, helium-4 ions or any other heavy ion beam. In the second part of this paper, we illustrate some IBA results obtained after irradiation and implantation experiments.

Conductivity change of defective graphene by helium ion beams

Directory of Open Access Journals (Sweden)

Yuichi Naitou

2017-04-01

Full Text Available Applying a recently developed helium ion microscope, we demonstrated direct nano-patterning and Anderson localization of single-layer graphene (SLG on SiO2/Si substrates. In this study, we clarified the spatial-resolution-limitation factor of direct nano-patterning of SLG. Analysis of scanning capacitance microscopy measurements reveals that the conductivity of helium ion (H+-irradiated SLG nanostructures depends on their geometrical size, i.e., the smaller the H+-irradiated SLG region, the higher its conductivity becomes. This finding can be explained by the hopping carrier transport across strongly localized states of defective SLG.

Comparison of platelet formation in hydrogen and helium-implanted silicon

International Nuclear Information System (INIS)

Hebras, X.; Nguyen, P.; Bourdelle, K.K.; Letertre, F.; Cherkashin, N.; Claverie, A.

2007-01-01

A comparative transmission electron microscopy study of the extended defects formed in (0 0 1) Si after hydrogen or helium implantation was performed. Quantitative data on the size and density of the defects with different crystallographic variants have been obtained. Common defects observed after implants with a dose of 1 x 10 16 cm -2 and isothermal anneals at 350 o C in the presence of a stiffener were platelet-like structures lying on {1 0 0} habit planes parallel and perpendicular to the wafer surface. The differences in the defect morphology and in the variant platelet population are correspondingly related to the different chemical reactivity of H and He and the different compressive biaxial stresses generated by the H and He implants

Unexpected mobility of OH+ and OD+ molecular ions in cooled helium gas

International Nuclear Information System (INIS)

Isawa, R; Yamazoe, J; Tanuma, H; Ohtsuki, K

2012-01-01

Mobilities of OH + and OD + ions in cooled helium gas have been measured at gas temperature of 4.3 K. Measured mobilities of both ions as a function of an effective temperature T eff show a minimum around 80 K, and they are approaching to the polarization limits at very low T eff . These findings will be related to the extremely strong anisotropy of the interaction potential between the molecular ion and helium atom.

Metal ion implantation: Conventional versus immersion

International Nuclear Information System (INIS)

Brown, I.G.; Anders, A.; Anders, S.; Dickinson, M.R.; MacGill, R.A.

1994-01-01

Vacuum-arc-produced metal plasma can be used as the ion feedstock material in an ion source for doing conventional metal ion implantation, or as the immersing plasma for doing plasma immersion ion implantation. The basic plasma production method is the same in both cases; it is simple and efficient and can be used with a wide range of metals. Vacuum arc ion sources of different kinds have been developed by the authors and others and their suitability as a metal ion implantation tool has been well established. Metal plasma immersion surface processing is an emerging tool whose characteristics and applications are the subject of present research. There are a number of differences between the two techniques, both in the procedures used and in the modified surfaces created. For example, the condensibility of metal plasma results in thin film formation and subsequent energetic implantation is thus done through the deposited layer; in the usual scenario, this recoil implantation and the intermixing it produces is a feature of metal plasma immersion but not of conventional energetic ion implantation. Metal plasma immersion is more suited (but not limited) to higher doses (>10 17 cm -2 ) and lower energies (E i < tens of keV) than the usual ranges of conventional metal ion implantation. These and other differences provide these vacuum-arc-based surface modification tools with a versatility that enhances the overall technological attractiveness of both

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

Science.gov (United States)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Design for a low temperature ion implantation and luminescence cryostat

International Nuclear Information System (INIS)

Noonan, J.R.; Kirkpatrick, C.G.; Myers, D.R.; Streetman, B.G.

1976-01-01

Several simple design changes of a conventional liquid helium optical Dewar can significantly improve the cryostat's versatility for use in low temperature particle irradiation. A bellows assembly provides precise sample positioning and allows convenient access for electrical connections. A heat exchanger consisting of thin walled tubing with a 'goose neck' bend provides a simple, effective means of cooling the sample as well as excellent thermal isolation of the sample holder from the coolant reservoir during controlled anneals. The addition of a vane-type vacuum valve, optical windows, and a rotatable tailpiece facilitates the study of optical properties of materials following low temperature ion implantation. (author)

Electrochemical investigations of ion-implanted oxide films

International Nuclear Information System (INIS)

Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

1985-01-01

Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

Low energy helium ion irradiation induced nanostructure formation on tungsten surface

Energy Technology Data Exchange (ETDEWEB)

Al-Ajlony, A., E-mail: montaserajlony@yahoo.com; Tripathi, J.K.; Hassanein, A.

2017-05-15

We report on the low energy helium ion irradiation induced surface morphology changes on tungsten (W) surfaces under extreme conditions. Surface morphology changes on W surfaces were monitored as a function of helium ion energy (140–300 eV), fluence (2.3 × 10{sup 24}–1.6 × 10{sup 25} ions m{sup −2}), and flux (2.0 × 10{sup 20}–5.5 × 10{sup 20} ion m{sup −2} s{sup −1}). All the experiments were performed at 900° C. Our study shows significant effect of all the three ion irradiation parameters (ion flux, fluence, and energy) on the surface morphology. However, the effect of ion flux is more pronounced. Variation of helium ion fluence allows to capture the very early stages of fuzz growth. The observed fuzz growth and morphology changes were understood in the realm of various possible phenomena. The study has relevance and important impact in the current and future nuclear fusion applications. - Highlights: •Reporting formation of W nanostructure (fuzz) due to low energy He ion beam irradiation. •Observing the very early stages for the W-Fuzz formation. •Tracking the surface morphological evolution during the He irradiation. •Discussing in depth our observation and drawing a possible scenario that explain this phenomenon. •Studying various ions irradiation parameters such as flux, fluence, and ions energy.

Wettability control of polystyrene by ion implantation

International Nuclear Information System (INIS)

Suzuki, Yoshiaki; Kusakabe, Masahiro; Iwaki, Masaya

1994-01-01

The permanent effects of ion implantation on the improvement of wettability of polystyrene is investigated in relation to ion species and fluences. The He + , Ne + , Na + , N 2 + , O 2 + , Ar + , K + and Kr + ion implantations were performed at energies of 50 and 150 keV at room temperature. The fluences ranged from 1x10 15 to 1x10 17 ions/cm 2 . The results showed that the contact angle of water for Na + and K + implanted polystyrene decreased from 87 to 0 , as the fluences increased to 1x10 17 ions/cm 2 at an energy of 50 keV. The contact angle for Na + and K + implanted polystyrene did not change under ambient room conditions, even when time elapsed. However, the contact an gle for He + , C + , O + , Ne + , N 2 + , O 2 + , Ar + , and Kr + ion implanted specimens decreased slightly immediately after ion implantation. Results of X-ray photoelectron spectroscopy showed that the increase in the Na content in the surface of Na + implanted specimens were observed with increasing fluence. It is concluded that permanent improvement in wettability was caused by doping effects rather than by radiation effects from Na + and K + ion implantation. ((orig.))

Ion implantation of metals

International Nuclear Information System (INIS)

Dearnaley, G.

1976-01-01

In this part of the paper descriptions are given of the effects of ion implantation on (a) friction and wear in metals; and (b) corrosion of metals. In the study of corrosion, ion implantation can be used either to introduce a constituent that is known to convey corrosion resistance, or more generally to examine the parameters which control corrosion. (U.K.)

Evaluation of defect formation in helium irradiated Y2O3 doped W-Ti alloys by positron annihilation and nanoindentation

Science.gov (United States)

Richter, Asta; Anwand, Wolfgang; Chen, Chun-Liang; Böttger, Roman

2017-10-01

Helium implanted tungsten-titanium ODS alloys are investigated using positron annihilation spectroscopy and nanoindentation. Titanium reduces the brittleness of the tungsten alloy, which is manufactured by mechanical alloying. The addition of Y2O3 nanoparticles increases the mechanical properties at elevated temperature and enhances irradiation resistance. Helium ion implantation was applied to simulate irradiation effects on these materials. The irradiation was performed using a 500 kV He ion implanter at fluences around 5 × 1015 cm-2 for a series of samples both at room temperature and at 600 °C. The microstructure and mechanical properties of the pristine and irradiated W-Ti-ODS alloy are compared with respect to the titanium and Y2O3 content. Radiation damage is studied by positron annihilation spectroscopy analyzing the lifetime and the Doppler broadening. Three types of helium-vacancy defects were detected after helium irradiation in the W-Ti-ODS alloy: small defects with high helium-to-vacancy ratio (low S parameter) for room temperature irradiation, larger open volume defects with low helium-to-vacancy ratio (high S parameter) at the surface and He-vacancy complexes pinned at nanoparticles deeper in the material for implantation at 600 °C. Defect induced hardness was studied by nanoindentation. A drastic hardness increase is observed after He ion irradiation both for room temperature and elevated irradiation temperature of 600 °C. The Ti alloyed tungsten-ODS is more affected by the hardness increase after irradiation compared to the pure W-ODS alloy.

Ion implantation control system

International Nuclear Information System (INIS)

Gault, R. B.; Keutzer, L. L.

1985-01-01

A control system is disclosed for an ion implantation system of the type in which the wafers to be implanted are mounted around the periphery of a disk which rotates and also moves in a radial direction relative to an ion beam to expose successive sections of each wafer to the radiation. The control system senses beam current which passes through one or more apertures in the disk and is collected by a Faraday cup. This current is integrated to obtain a measure of charge which is compared with a calculated value based upon the desired ion dosage and other parameters. The resultant controls the number of incremental steps the rotating disk moves radially to expose the adjacent sections of each wafer. This process is continued usually with two or more traverses until the entire surface of each wafer has been implanted with the proper ion dosage

Evaluation of an expence of materials during ion implantation

International Nuclear Information System (INIS)

Bannikov, M.G.; Zlobin, N.; Zotov, A.V.; Vasilev, V.I.; Vasilev, I.P.

2003-01-01

Ion implantation is used for a surface modification. The implantation dose must be sufficient to obtain the required properties of a processed surface, but should not be exceeded to prevent over-expenditure of implanted materials. The latter is especially important when noble metals are used as an implanted material. The ion implanter includes a vacuum chamber, source of metal ions (target) and a vacuum pumping-out system. Ions of a plasma-forming gas sputter the target and ions of metal are then accelerated and implanted into surface treated. Ion implantation dose can be calculated from operation parameters such as ion beam current density and duration of implanting. The presence of the plasma-forming gas in the ion flow makes it difficult to determine the expenditure of an implanted metal itself. The objective of this paper is the more accurate definition of an expense of an implanted metal. Mass- spectrometric analysis of an ion beam together with the weighing of the target was used to determine the expense of an implanted metal. It was found that, depending on the implantation parameters, on average around 50% of a total ion flow are metal ions. Results obtained allow more precise definition of an implantation dose. Thus, over- expenditure of implanted metals can be eliminated. (author)

High resistivity in InP by helium bombardment

International Nuclear Information System (INIS)

Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

1984-01-01

Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

Ion implantation as an efficient surface treatment

International Nuclear Information System (INIS)

Straede, C.A.

1992-01-01

Ion beam processing has for several years been well established in the semiconductor industry. In recent years ion implantation of tool steels, ceramics and even plastics has gained increasing industrial awareness. The development of ion implantation to a commercially viable surface treatment of tools and spare parts working in production type environments is very dependent on technical merits, economic considerations, competing processes and highly individual barriers to acceptance for each particular application. Some examples of this will be discussed. The development of the process is very closely linked with the development of high current accelerators and their ability to efficiently manipulate the samples being treated, or to make sample manipulation superfluous by using special beam systems like the PSII. Furthermore, the ability to produce high beam currents (mA) of a wide variety of ions is crucial. Previously, it was broadly accepted that ion implantation of tools on a commercial basis generally had to be limited to nitrogen implantation. The development of implanters which can produce high beam currents of ions like B + , C + , Ti + , Cr + and others is rapidly changing this situation, and today an increasing number of commercial implantations are performed with these ions although nitrogen is still successfully used in the majority of commercial implantation. All in all, the recent development of equipment makes it possible to a higher extent than before to tailor the implantation to a specific situation. The emerging new possibilities in this direction will be discussed, and a broad selection of practical examples of ion implantation at standard low temperatures of tools and spare parts will be given. Furthermore, very interesting results have been obtained recently by implanting nitrogen at elevated temperatures, which yields a relatively deep penetration of the implanted ions. (orig./WL)

Ion implantation for semiconductors

International Nuclear Information System (INIS)

Grey-Morgan, T.

1995-01-01

Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

International Nuclear Information System (INIS)

Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

1982-11-01

Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

Ion beam analysis of metal ion implanted surfaces

Energy Technology Data Exchange (ETDEWEB)

Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

1993-12-31

Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

Ion beam analysis of metal ion implanted surfaces

Energy Technology Data Exchange (ETDEWEB)

Evans, P J; Chu, J W; Johnson, E P; Noorman, J T [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Sood, D K [Royal Melbourne Inst. of Tech., VIC (Australia)

1994-12-31

Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs.

Ion beam analysis of metal ion implanted surfaces

International Nuclear Information System (INIS)

Evans, P.J.; Chu, J.W.; Johnson, E.P.; Noorman, J.T.; Sood, D.K.

1993-01-01

Ion implantation is an established method for altering the surface properties of many materials. While a variety of analytical techniques are available for the characterisation of implanted surfaces, those based on particle accelerators such as Rutherford backscattering (RBS) and nuclear reaction analysis (NRA) provide some of the most useful and powerful for this purpose. Application of the latter techniques to metal ion implantation research at ANSTO will be described with particular reference to specific examples from recent studies. Where possible, the information obtained from ion beam analysis will be compared with that derived from other techniques such as Energy Dispersive X-ray (EDX) and Auger spectroscopies. 4 refs., 5 figs

Surface microhardening by ion implantation

International Nuclear Information System (INIS)

Singh, Amarjit

1986-01-01

The paper discusses the process and the underlying mechanism of surface microhardening by implanting suitable energetic ions in materials like 4145 steel, 304 stainless steel, aluminium and its 2024-T351 alloy. It has been observed that boron and nitrogen implantation in materials like 4145 steel and 304 stainless steel can produce a significant increase in surface hardness. Moreover the increase can be further enhanced with suitable overlay coatings such as aluminium (Al), Titanium (Ti) and carbon (C). The surface hardening due to implantation is attributed to precipitation hardening or the formation of stable/metastable phase or both. The effect of lithium implantation in aluminium and its alloy on microhardness with increasing ion dose and ion beam energy is also discussed. (author)

Development of industrial ion implantation technology

International Nuclear Information System (INIS)

Choi, Byung Hoh; Jung, Kee Suk; Kim, Wan; Song, Woo Sub; Hwang, Chul Kyoo

1994-02-01

We developed an ion implanter fitted for the treatment of 12 inch or larger wafers to make 256 or higher Mega D-Ram wafers. Design features are dual usage of gas/solid for the ion source loading, production of multi-balanced ions, and the possible oxygen ion implantation. BOSII program was used for the ion optics calculation. Beams are triangularly scanned to wafers for the even implantation by a proper magnetic field application. More than 10 mA ion current is produced. For the efficient implantation to be made, target is made to rotate with tilted angle at a displaced axis. High speed tools, diamond tools, precision dies, and razor blades were implanted and the performance was evaluated after two or three times of line application. Of those materials studied, PCB drills and end mills are on the commercial treatment stages. Industrial materials as SKD-11, WC-Co, NAK-55 was compositely treated with ion beam and coating. Resultant properties were analyzed using AES, XRD, and TEM. For the case of xenon ions, excellent TiN coating resulted and its application to microcircuit lead frame increased the performance to more than 30 percent. 94 figs, 29 pix, 19 tabs, 50 refs. (Author)

Development of industrial ion implantation technology

Energy Technology Data Exchange (ETDEWEB)

Choi, Byung Hoh; Jung, Kee Suk; Kim, Wan; Song, Woo Sub; Hwang, Chul Kyoo [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

1994-02-01

We developed an ion implanter fitted for the treatment of 12 inch or larger wafers to make 256 or higher Mega D-Ram wafers. Design features are dual usage of gas/solid for the ion source loading, production of multi-balanced ions, and the possible oxygen ion implantation. BOSII program was used for the ion optics calculation. Beams are triangularly scanned to wafers for the even implantation by a proper magnetic field application. More than 10 mA ion current is produced. For the efficient implantation to be made, target is made to rotate with tilted angle at a displaced axis. High speed tools, diamond tools, precision dies, and razor blades were implanted and the performance was evaluated after two or three times of line application. Of those materials studied, PCB drills and end mills are on the commercial treatment stages. Industrial materials as SKD-11, WC-Co, NAK-55 was compositely treated with ion beam and coating. Resultant properties were analyzed using AES, XRD, and TEM. For the case of xenon ions, excellent TiN coating resulted and its application to microcircuit lead frame increased the performance to more than 30 percent. 94 figs, 29 pix, 19 tabs, 50 refs. (Author).

Helium Ion Microscopy of proton exchange membrane fuel cell electrode structures

DEFF Research Database (Denmark)

Chiriaev, Serguei; Dam Madsen, Nis; Rubahn, Horst-Günter

2017-01-01

electrode interface structure dependence on ionomer content, systematically studied by Helium Ion Microscopy (HIM). A special focus was on acquiring high resolution images of the electrode structure and avoiding interface damage from irradiation and tedious sample preparation. HIM demonstrated its....... In the hot-pressed electrodes, we found more closed contact between the electrode components, reduced particle size, polymer coalescence and formation of nano-sized polymer fiber architecture between the particles. Keywords: proton exchange membrane fuel cells (PEMFCs); Helium Ion Microscopy (HIM...

Evaluation of stabilization techniques for ion implant processing

Science.gov (United States)

Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Narcy, Mark E.; Livesay, William R.

1999-06-01

With the integration of high current ion implant processing into volume CMOS manufacturing, the need for photoresist stabilization to achieve a stable ion implant process is critical. This study compares electron beam stabilization, a non-thermal process, with more traditional thermal stabilization techniques such as hot plate baking and vacuum oven processing. The electron beam processing is carried out in a flood exposure system with no active heating of the wafer. These stabilization techniques are applied to typical ion implant processes that might be found in a CMOS production process flow. The stabilization processes are applied to a 1.1 micrometers thick PFI-38A i-line photoresist film prior to ion implant processing. Post stabilization CD variation is detailed with respect to wall slope and feature integrity. SEM photographs detail the effects of the stabilization technique on photoresist features. The thermal stability of the photoresist is shown for different levels of stabilization and post stabilization thermal cycling. Thermal flow stability of the photoresist is detailed via SEM photographs. A significant improvement in thermal stability is achieved with the electron beam process, such that photoresist features are stable to temperatures in excess of 200 degrees C. Ion implant processing parameters are evaluated and compared for the different stabilization methods. Ion implant system end-station chamber pressure is detailed as a function of ion implant process and stabilization condition. The ion implant process conditions are detailed for varying factors such as ion current, energy, and total dose. A reduction in the ion implant systems end-station chamber pressure is achieved with the electron beam stabilization process over the other techniques considered. This reduction in end-station chamber pressure is shown to provide a reduction in total process time for a given ion implant dose. Improvements in the ion implant process are detailed across

Aligned ion implantation using scanning probes

International Nuclear Information System (INIS)

Persaud, A.

2006-01-01

A new technique for precision ion implantation has been developed. A scanning probe has been equipped with a small aperture and incorporated into an ion beamline, so that ions can be implanted through the aperture into a sample. By using a scanning probe the target can be imaged in a non-destructive way prior to implantation and the probe together with the aperture can be placed at the desired location with nanometer precision. In this work first results of a scanning probe integrated into an ion beamline are presented. A placement resolution of about 120 nm is reported. The final placement accuracy is determined by the size of the aperture hole and by the straggle of the implanted ion inside the target material. The limits of this technology are expected to be set by the latter, which is of the order of 10 nm for low energy ions. This research has been carried out in the context of a larger program concerned with the development of quantum computer test structures. For that the placement accuracy needs to be increased and a detector for single ion detection has to be integrated into the setup. Both issues are discussed in this thesis. To achieve single ion detection highly charged ions are used for the implantation, as in addition to their kinetic energy they also deposit their potential energy in the target material, therefore making detection easier. A special ion source for producing these highly charged ions was used and their creation and interactions with solids of are discussed in detail. (orig.)

Helium diffusion in nickel at high temperatures

International Nuclear Information System (INIS)

Philipps, V.

1980-09-01

Helium has been implanted at certain temperatures between 800 and 1250 0 C into single and polycrystalline Ni-samples with implantation depths between 15 and 90 μm. Simultaneously the helium reemission from the sample is measured by a mass-spectrometer. It has been shown that the time dependence of the observed reemission rate is governed by volume diffusion of the helium. Measuring this time dependence as a function of temperature the helium diffusion constant has been determined. The He-diffusion is interpreted as a interstitial diffusion hindered by thermal vacancies. Depending on the implantation depth more or less of the implanted helium remains in the sample and forms large helium bubbles. (orig./GSCH)

Mutagenic effects of ion implantation on stevia

International Nuclear Information System (INIS)

Wang Cailian; Shen Mei; Chen Qiufang; Lu Ting; Shu Shizhen

1998-01-01

Dry seeds of Stevia were implanted by 75 keV nitrogen and carbon ions with various doses. The biological effects in M 1 and mutation in M 2 were studied. The results showed that ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with ion beam dose. The rate of cells with chromosomal aberration was lower than that induced with γ-rays. Frequency of the mutation induced by implantation of N + and C + ions were higher than those induced by γ-rays. The rate of cell with chromosome aberration and in M 2 useful mutation induced by implantation of C + ion was higher than those induced by implantation of N + ion. Mutagenic effects Feng 1 x Riyuan and Riyuan x Feng 2 by implantation of N + and C + were higher than that of Jining and Feng 2

ERDA with an external helium ion micro-beam: Advantages and potential applications

International Nuclear Information System (INIS)

Calligaro, T.; Castaing, J.; Dran, J.-C.; Moignard, B.; Pivin, J.-C.; Prasad, G.V.R.; Salomon, J.; Walter, P.

2001-01-01

Preliminary ERDA experiments at atmospheric pressure have been performed with our external microprobe set-up currently used for the analysis of museum objects by PIXE, RBS and NRA. The objective was to check the feasibility of hydrogen (and deuterium) profiling with an external beam of 3-MeV helium ions. The standard scattering geometry (incident beam at 15 deg. with respect to sample surface and emerging protons or deuterons at 15 deg. in the forward direction) was kept, but the thin foil absorber was replaced by helium gas filling the space between the beam spot and the detector over a distance of about 84 mm. Several standards prepared by ion implantation, with well known H or D depth profiles, were first analysed, which indicated that the analytical capability was as good as under vacuum. A striking feature is the much lower surface peak than under vacuum, a fact that enhances the sensitivity for H analysis near the surface. The same type of measurement was then performed on different materials to show the usefulness of the technique. As a first example, we have checked that the incorporation of H or D into sapphire crystals during mechanical polishing is below the detection limit. Another example is the measurement of the H content in emeralds which can be used as an additional compositional criterion for determining the provenance of emeralds set in museum jewels. The advantages and limitations of our set-up are discussed and several possible applications in the field of cultural heritage are described

Arbitrary amplitude electrostatic wave propagation in a magnetized dense plasma containing helium ions and degenerate electrons

Science.gov (United States)

Mahmood, S.; Sadiq, Safeer; Haque, Q.; Ali, Munazza Z.

2016-06-01

The obliquely propagating arbitrary amplitude electrostatic wave is studied in a dense magnetized plasma having singly and doubly charged helium ions with nonrelativistic and ultrarelativistic degenerate electrons pressures. The Fermi temperature for ultrarelativistic degenerate electrons described by N. M. Vernet [(Cambridge University Press, Cambridge, 2007), p. 57] is used to define ion acoustic speed in ultra-dense plasmas. The pseudo-potential approach is used to solve the fully nonlinear set of dynamic equations for obliquely propagating electrostatic waves in a dense magnetized plasma containing helium ions. The upper and lower Mach number ranges for the existence of electrostatic solitons are found which depends on the obliqueness of the wave propagation with respect to applied magnetic field and charge number of the helium ions. It is found that only compressive (hump) soliton structures are formed in all the cases and only subsonic solitons are formed for a singly charged helium ions plasma case with nonrelativistic degenerate electrons. Both subsonic and supersonic soliton hump structures are formed for doubly charged helium ions with nonrelativistic degenerate electrons and ultrarelativistic degenerate electrons plasma case containing singly as well as doubly charged helium ions. The effect of propagation direction on the soliton amplitude and width of the electrostatic waves is also presented. The numerical plots are also shown for illustration using dense plasma parameters of a compact star (white dwarf) from literature.

Ion implantation methods for semiconductor substrates

International Nuclear Information System (INIS)

Matsushita, T.; Mamine, T.; Hayashi, H.; Nishiyama, K.

1980-01-01

A method of ion implantation for controlling the life time of minority carriers in a semiconductor substrate and hence to reduce the temperature dependency of the life time, comprises implanting iron ions into an N type semiconductor substrate with a dosage of 10 10 to 10 15 ions cm -2 , and then heat-treating the implanted substrate at 850 0 to 1250 0 C. The method is applicable to the production of diodes, transistors, Si controlled rectifiers and gate controlled switching devices. (author)

Helium ion distributions in a 4 kJ plasma focus device by 1 mm-thick large-size polycarbonate detectors

Energy Technology Data Exchange (ETDEWEB)

Sohrabi, M., E-mail: dr_msohrabi@yahoo.com; Habibi, M.; Ramezani, V.

2014-11-14

Helium ion beam profile, angular and iso-ion beam distributions in 4 kJ Amirkabir plasma focus (APF) device were effectively observed by the unaided eyes and studied in single 1 mm-thick large-diameter (20 cm) polycarbonate track detectors (PCTD). The PCTDs were processed by 50 Hz–HV electrochemical etching using a large-size ECE chamber. The results show that helium ions produced in the APF device have a ring-shaped angular distribution peaked at an angle of ∼±60° with respect to the top of the anode. Some information on the helium ion energy and distributions is also provided. The method is highly effective for ion beam studies. - Highlights: • Helium iso-ion beam profile and angular distributions were studied in the 4 kJ APF device. • Large-area 1 mm-thick polycarbonate detectors were processed by 50 Hz-HV ECE. • Helium ion beam profile and distributions were observed by unaided eyes in a single detector. • Helium ion profile has ring-shaped distributions with energies lower at the ring location. • Helium iso-ion track density, diameter and energy distributions are estimated.

Channeling in helium ion microscopy: Mapping of crystal orientation

Directory of Open Access Journals (Sweden)

Vasilisa Veligura

2012-07-01

Full Text Available Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur.Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict channeling maxima.Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.

Structure-property and composition-property relationships for poly(ethylene terephthalate) surfaces modified by helium plasma-based ion implantation

Energy Technology Data Exchange (ETDEWEB)

Toth, A., E-mail: totha@chemres.hu [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary); Veres, M. [Research Institute for Solid State Physics and Optics of the Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 49 (Hungary); Kereszturi, K.; Mohai, M.; Bertoti, I.; Szepvoelgyi, J. [Institute of Materials and Environmental Chemistry, Chemical Research Center, Hungarian Academy of Sciences, H-1525 Budapest, P.O. Box 17 (Hungary)

2011-10-01

The surfaces of untreated and helium plasma-based ion implantation (He PBII) treated poly(ethylene terephthalate) (PET) samples were characterised by reflectance colorimetry, contact angle studies and measurements of surface electrical resistance. The results were related to the structural and compositional data obtained by the authors earlier on parallel samples by XPS and Raman spectroscopy. Inverse correlations between lightness and I{sub D}/I{sub G} ratio and between chroma and I{sub D}/I{sub G} ratio were obtained, suggesting that the PBII-treated PET samples darken and their colourfulness decreases with the increase of the portion of aromatic sp{sup 2} carbon rings in the chemical structure of the modified layer. Direct correlation between water contact angle and the I{sub D}/I{sub G} ratio and inverse correlations between surface energy and I{sub D}/I{sub G} ratio and between dispersive component of surface energy and I{sub D}/I{sub G} ratio were found, reflecting that surface wettability, surface energy and its dispersive component decrease with the formation of surface structure, characterised again by enhanced portion of aromatic sp{sup 2} carbon rings. The surface electrical resistance decreased with the increase of the surface C-content determined by XPS and also with the increase of the surface concentration of conjugated double bonds, reflected by the increase of the {pi} {yields} {pi}* shake-up satellite of the C 1s peak.

Surface engineering by ion implantation

International Nuclear Information System (INIS)

Nielsen, Bjarne Roger

1995-01-01

Awidespread commercial applica tion iof particle accelerators is for ion implantation. Accelerator beams are used for ion implantation into metals, alloying a thin surface layer with foreign atoms to concentrations impossible to achieve by thermal processes, making for dramatic improvements in hardness and in resistance to wear and corrosion. Traditional hardening processes require high temperatures causing deformation; ion implantation on the other hand is a ''cold process'', treating the finished product. The ionimplanted layer is integrated in the substrate, avoiding the risk of cracking and delamination from normal coating processes. Surface properties may be ''engineered'' independently of those of the bulk material; the process does not use environmentally hazardous materials such as chromium in the surface coating. The typical implantation dose required for the optimum surface properties of metals is around 2 x 10 17 ion/cm 2 , a hundred times the typical doses for semiconductor processing. When surface areas of more than a few square centimetres have to be treated, the implanter must therefore be able to produce high beam currents (5 to 10 mA) to obtain an acceptable treatment time. Ion species used include nitrogen, boron, carbon, titanium, chromium and tantalum, and beam energies range from 50 to 200 keV. Since most components are three dimensional, it must be possible to rotate and tilt them in the beam, and control beam position over a large area. Examples of industrial applications are: - surface treatment of prostheses (hip and knee joints) to reduce wear of the moving parts, using biocompatible materials; - ion implantation into high speed ball bearings to protect against the aqueous corrosion in jet engines (important for service helicopters on oil rigs); - hardening of metal forming and cutting tools; - reduction of corrosive wear of plastic moulding tools, which are expensive to produce

Ion implantation - an introduction

International Nuclear Information System (INIS)

Townsend, P.D.

1986-01-01

Ion implantation is a widely used technique with a literature that covers semiconductor production, surface treatments of steels, corrosion resistance, catalysis and integrated optics. This brief introduction outlines advantages of the technique, some aspects of the underlying physics and examples of current applications. Ion implantation is already an essential part of semiconductor technology while in many other areas it is still in an early stage of development. The future scope of the subject is discussed. (author)

Prospects of ion implantation and ion beam mixing for corrosion protection

International Nuclear Information System (INIS)

Wolf, G.K.; Munn, P.; Ensinger, W.

1985-01-01

Ion implantation is very useful new low temperature treatment for improving the mechanical surface properties of materials without any dimensional changes. In addition also the corrosion properties of metals can be modified considerably by this technique. The long term corrosion behaviour of implanted metals, however, has been studied only for a very limited number of cases. In this contribution a survey of attempts to do this will be presented. As examples of promising systems for corrosion protection by ion beams iron, steel and titanium were examined with and without pretreatment by ion implantation and ion beam mixing. The corrosion rates of the systems have been obtained by neutron activation analysis and by electrochemical methods. Experimental results are presented on: Palladium implanted in titanium - crevice corrosion in salt solution; Palladium implanted in and deposited on titanium -corrosion in sulfuric acid; Platinum implanted in stainless steel -corrosion in sulfuric acid. (author)

Imprints from the solar cycle on the helium atom and helium pickup ion distributions

Directory of Open Access Journals (Sweden)

D. Rucinski

Full Text Available Neutral interstellar helium atoms penetrate into the solar system almost unaffected by gas–plasma interactions in the heliospheric interface region, and thus can be considered as carriers of original information on the basic parameters (like density, temperature, bulk velocity of the Very Local Interstellar Medium (VLISM. Such information can nowadays be derived from analysis of data obtained from different experimental methods: in situ measurements of He atoms (Ulysses, observations of the solar backscattered He 584 A radiation (EUVE, in situ measurements of He + pickup ions (AMPTE, Ulysses, Wind, SOHO, ACE. In view of the current coordinated international ISSI campaign devoted to the study of the helium focusing cone structure and its evolution, we analyze expected variations of neutral He density, of He + pickup fluxes and of their phase space distributions at various phases of the solar activity cycle based on a realistic time-dependent modelling of the neutral helium and He + pickup ion distributions, which reflect solar cycle-induced variations of the photoionization rate. We show that the neutral helium density values are generally anticorrelated with the solar activity phase and in extreme cases (near the downwind axis the maximum-to-minimum density ratio may even exceed factors of ~ 3 at 1 AU. We also demonstrate that in the upwind hemisphere (at 1 AU and beyond the He + fluxes are correlated with the solar cycle activity, whereas on the downwind side the maximum of the expected flux up to distances of ~ 3 AU occurs around solar minimum epoch, and only further away does the correlation with solar activity become positive. Finally, we present the response of the phase space distribution spectra of He + pickup ions (in the solar wind frame for different epochs of the solar cycle and heliocentric distances from 1 to 5 AU covering the range of Ulysses, Wind and ACE observations.

Key words. Solar physics, astrophysics and astronomy

Imprints from the solar cycle on the helium atom and helium pickup ion distributions

Directory of Open Access Journals (Sweden)

D. Rucinski

2003-06-01

Full Text Available Neutral interstellar helium atoms penetrate into the solar system almost unaffected by gas–plasma interactions in the heliospheric interface region, and thus can be considered as carriers of original information on the basic parameters (like density, temperature, bulk velocity of the Very Local Interstellar Medium (VLISM. Such information can nowadays be derived from analysis of data obtained from different experimental methods: in situ measurements of He atoms (Ulysses, observations of the solar backscattered He 584 A radiation (EUVE, in situ measurements of He + pickup ions (AMPTE, Ulysses, Wind, SOHO, ACE. In view of the current coordinated international ISSI campaign devoted to the study of the helium focusing cone structure and its evolution, we analyze expected variations of neutral He density, of He + pickup fluxes and of their phase space distributions at various phases of the solar activity cycle based on a realistic time-dependent modelling of the neutral helium and He + pickup ion distributions, which reflect solar cycle-induced variations of the photoionization rate. We show that the neutral helium density values are generally anticorrelated with the solar activity phase and in extreme cases (near the downwind axis the maximum-to-minimum density ratio may even exceed factors of ~ 3 at 1 AU. We also demonstrate that in the upwind hemisphere (at 1 AU and beyond the He + fluxes are correlated with the solar cycle activity, whereas on the downwind side the maximum of the expected flux up to distances of ~ 3 AU occurs around solar minimum epoch, and only further away does the correlation with solar activity become positive. Finally, we present the response of the phase space distribution spectra of He + pickup ions (in the solar wind frame for different epochs of the solar cycle and heliocentric distances from 1 to 5 AU covering the range of Ulysses, Wind and ACE observations.Key words. Solar physics, astrophysics and astronomy

Development of industrial ion implantation and ion assisted coating processes: A perspective

International Nuclear Information System (INIS)

Legg, K.O.; Solnick-Legg, H.

1989-01-01

Ion beam processes have gone through a series of developmental stages, from being the mainstay of the semiconductor industry for production of integrated circuits, to new commercial processes for biomedical, aerospace and other industries. Although research is still continuing on surface modification using ion beam methods, ion implantation and ion assisted coatings for treatment of metals, ceramics, polymers and composites must now be considered viable industrial processes of benefit in a wide variety of applications. However, ion implantation methods face various barriers to acceptability, in terms not only of other surface treatment processes, but for implantation itself. This paper will discuss some of the challenges faced by a small company whose primary business is development and marketing of ion implantation and ion-assisted coating processes. (orig.)

Investigation of mixed ion fields in the forward direction for 220.5 MeV/u helium ion beams: comparison between water and PMMA targets

Science.gov (United States)

Aricò, G.; Gehrke, T.; Jakubek, J.; Gallas, R.; Berke, S.; Jäkel, O.; Mairani, A.; Ferrari, A.; Martišíková, M.

2017-10-01

Currently there is a rising interest in helium ion beams for radiotherapy. For benchmarking of the physical beam models used in treatment planning, there is a need for experimental data on the composition and spatial distribution of mixed ion fields. Of particular interest are the attenuation of the primary helium ion fluence and the build-up of secondary hydrogen ions due to nuclear interactions. The aim of this work was to provide such data with an enhanced precision. Moreover, the validity and limits of the mixed ion field equivalence between water and PMMA targets were investigated. Experiments with a 220.5 MeV/u helium ion pencil beam were performed at the Heidelberg Ion-Beam Therapy Center in Germany. The compact detection system used for ion tracking and identification was solely based on Timepix position-sensitive semiconductor detectors. In comparison to standard techniques, this system is two orders of magnitude smaller, and provides higher precision and flexibility. The numbers of outgoing helium and hydrogen ions per primary helium ion as well as the lateral particle distributions were quantitatively investigated in the forward direction behind water and PMMA targets with 5.2-18 cm water equivalent thickness (WET). Comparing water and PMMA targets with the same WET, we found that significant differences in the amount of outgoing helium and hydrogen ions and in the lateral particle distributions arise for target thicknesses above 10 cm WET. The experimental results concerning hydrogen ions emerging from the targets were reproduced reasonably well by Monte Carlo simulations using the FLUKA code. Concerning the amount of outgoing helium ions, significant differences of 3-15% were found between experiments and simulations. We conclude that if PMMA is used in place of water in dosimetry, differences in the dose distributions could arise close to the edges of the field, in particular for deep seated targets. The results presented in this publication are

Preparation of targets by ion implantation

International Nuclear Information System (INIS)

Santry, D.C.

1976-01-01

Various factors are described which are involved in target preparation by direct ion implantation and the limitations and pitfalls of the method are emphasized. Examples are given of experiments for which ion implanted targets are well suited. (author)

Negative-ion current density dependence of the surface potential of insulated electrode during negative-ion implantation

International Nuclear Information System (INIS)

Tsuji, Hiroshi; Okayama, Yoshio; Toyota, Yoshitaka; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kouji.

1994-01-01

Positive ion implantation has been utilized as the method of impurity injection in ultra-LSI production, but the problem of substrate charging cannot be resolved by conventional charge compensation method. It was forecast that by negative ion implantation, this charging problem can be resolved. Recently the experiment on the negative ion implantation into insulated electrodes was carried out, and the effect of negative ion implantation to this problem was proved. However, the dependence of charged potential on the increase of negative ion current at the time of negative ion implantation is a serious problem in large current negative ion implantation hereafter. The charged potential of insulated conductor substrates was measured by the negative ion implantation using the current up to several mA/cm 2 . The experimental method is explained. Medium current density and high current density negative ion implantation and charged potential are reported. Accordingly in negative ion implantation, if current density is optimized, the negative ion implantation without charging can be realized. (K.I.)

The interaction of a nanoscale coherent helium-ion probe with a crystal

International Nuclear Information System (INIS)

D'Alfonso, A.J.; Forbes, B.D.; Allen, L.J.

2013-01-01

Thickness fringing was recently observed in helium ion microscopy (HIM) when imaging magnesium oxide cubes using a 40 keV convergent probe in scanning transmission mode. Thickness fringing is also observed in electron microscopy and is due to quantum mechanical, coherent, multiple elastic scattering attenuated by inelastic phonon excitation (thermal scattering). A quantum mechanical model for elastic scattering and phonon excitation correctly models the thickness fringes formed by the helium ions. However, unlike the electron case, the signal in the diffraction plane is due mainly to the channeling of ions which have first undergone inelastic thermal scattering in the first few atomic layers so that the origin of the thickness fringes is not due to coherent interference effects. This quantum mechanical model affords insight into the interaction of a nanoscale, focused coherent ion probe with the specimen and allows us to elucidate precisely what is needed to achieve atomic resolution HIM. - Highlights: • Thickness fringing has recently been observed imaging MgO cubes using helium ion microscopy. • A quantum mechanical model for elastic scattering and phonon excitation models the fringes. • The signal is due mainly to the coherent scattering of ions after inelastic thermal scattering. • We elucidate precisely what is needed to achieve atomic resolution HIM

Neovascular glaucoma after helium ion irradiation for uveal melanoma

International Nuclear Information System (INIS)

Kim, M.K.; Char, D.H.; Castro, J.L.; Saunders, W.M.; Chen, G.T.; Stone, R.D.

1986-01-01

Neovascular glaucoma developed in 22 of 169 uveal melanoma patients treated with helium ion irradiation. Most patients had large melanomas; no eyes containing small melanomas developed anterior segment neovascularization. The mean onset of glaucoma was 14.1 months (range, 7-31 months). The incidence of anterior segment neovascularization increased with radiation dosage; there was an approximately three-fold increase at 80 GyE versus 60 GyE of helium ion radiation (23% vs. 8.5%) (P less than 0.05). Neovascular glaucoma occurred more commonly in larger tumors; the incidence was not affected by tumor location, presence of subretinal fluid, nor rate of tumor regression. Fifty-three percent of patients had some response with intraocular pressures of 21 mmHg or less to a combination of antiglaucoma treatments

Comment on theories for helium-assisted void nucleation

International Nuclear Information System (INIS)

Russell, K.C.

1976-01-01

Voids form by agglomeration of irradiation-induced vacancies which remain after preferential absorption of self interstitials at dislocation lines. Helium which is formed by (n,α) transmutations and, in simulation studies, may be ion-implanted, often plays an important, but puzzling role. In some materials, very few voids form in the absence of helium, even after intense irradiation. In many other materials , voids form readily under a variety of irradiation conditions, even in the absence of helium. Why some materials require helium - typically in the 10 -6 apa (atom per atom) range - and others do not, and the reason for that particular level are by no means clear. The physics of void nucleation, particularly the role of helium, have been the subject of several theoretical papers. This note presents a critique of these theories, and then briefly outlines a new analysis which is not subject to their limitations. (Auth.)

Low energy implantation of boron with decaborane ions

Science.gov (United States)

Albano, Maria Angela

The goal of this dissertation was to determine the feasibility of a novel approach to forming ultra shallow p-type junctions (tens of nm) needed for future generations of Si MOS devices. In the new approach, B dopant atoms are implanted by cluster ions obtained by ionization of decaborane (B 10H14) vapor. An experimental ion implanter with an electron impact ion source and magnetic mass separation was built at the Ion Beam and Thin Film Research Laboratory at NJIT. Beams of B10Hx+ ions with currents of a few microamperes and energies of 1 to 12 keV were obtained and used for implantation experiments. Profiles of B and H atoms implanted in Si were measured by Secondary Ion Mass Spectroscopy (SIMS) before and after rapid thermal annealing (RTA). From the profiles, the junction depth of 57 nm (at 1018 cm-3 B concentration) was obtained with 12 keV decaborane ions followed by RTA. The dose of B atoms that can be implanted at low energy into Si is limited by sputtering as the ion beam sputters both the matrix and the implanted atoms. As the number of sputtered B atoms increases with the implanted dose and approaches the number of the implanted atoms, equilibrium of B in Si is established. This effect was investigated by comparison of the B dose calculated from the ion beam integration with B content in the sample measured by Nuclear Reaction Analysis (NRA). Maximum (equilibrium) doses of 1.35 x 1016 B cm -2 and 2.67 x 1016 B cm-2 were obtained at the beam energies of 5 and 12 keV, respectively. The problem of forming shallow p-type junctions in Si is related not only to implantation depth, but also to transient enhanced diffusion (TED). TED in Si implanted with B10Hx+ was measured on boron doping superlattice (B-DSL) marker layers. It was found that TED, following decaborane implantation, is the same as with monomer B+ ion implantation of equivalent energy and that it decreases with the decreasing ion energy. (Abstract shortened by UMI.)

Fatigue and wear of metalloid-ion-implanted metals

International Nuclear Information System (INIS)

Hohmuth, K.; Richter, E.; Rauschenbach, B.; Blochwitz, C.

1985-01-01

The effect of metalloid ion implantation on the fatigue behaviour and wear of nickel and two steels has been investigated. These metals were implanted with boron, carbon and nitrogen ions at energies from 30 to 60 keV and with doses from 1 X 10 16 to 1 X 10 18 ions cm -2 at room temperature. The mechanical behaviour of fatigued nickel was studied in push-pull tests at room temperature. Wear measurements were made using a pin-and-disc technique. The surface structure, dislocation arrangement and modification of the implantation profile resulting from mechanical tests on metals which had been implanted with metalloid ions were examined using high voltage electron microscopy, transmission high energy electron diffraction, scanning electron microscopy and Auger electron spectroscopy. It is reported that nitrogen and boron ion implantation improves the fatigue lifetime, changes the number and density of the slip bands and modifies the dislocation arrangements in nickel. The cyclic deformation leads to recrystallization of the boron-ion-induced amorphous structure of nickel and to diffusion of the boron and nitrogen in the direction of the surface. The wear behaviour of steels was improved by implantation of mass-separated ions and by implantation of ions without mass separation. (Auth.)

Application of ion implantation in stevia breeding

International Nuclear Information System (INIS)

Wang Cailian; Chen Qiufang; Jin Wei; Lu Ting; Shu Shizhen

1999-08-01

Dry seed of stevia were implanted with 60-100 keV nitrogen ion and 75 keV carbon ion of various doses, and the effects of the composition and yield of stevioside were studied. The results showed that ion beam could induce variation in total stevioside yield and the composition of the plant. The best treatment was 75 keV nitrogen ion with 5 x 10 14 N + /cm 2 , the stevioside yield and Rebaudioside A (R-A) content were increased by 4.74% and 14.08% respectively. The effects induced by implantation of carbon ion were higher than those induced by implantation of nitrogen ion. Effects of Feng 1 x Ri Yuan and Ri Yuan x Feng 2 are higher than those of Ji Ning and Feng 2 . Seven mutation lines were selected from the mutation progenies. The stevioside composition of these lines were previously improved. The results suggest a potential application of ion implantation in stevia breeding

Helium implanted Eurofer97 characterized by positron beam Doppler broadening and Thermal Desorption Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Carvalho, I., E-mail: i.carvalho@m2i.nl [Materials Innovation Institute (M2i), Delft (Netherlands); Schut, H. [Delft University of Technology, Faculty of Applied Sciences, Delft (Netherlands); Fedorov, A.; Luzginova, N. [Nuclear Research and Consultancy Group (NRG), Petten (Netherlands); Desgardin, P. [CEMHTI-CNRS, 3A Rue de la Férolerie, 45071 Orléans Cedex (France); Sietsma, J. [Delft University of Technology, Faculty of Mechanical, Maritime and Materials Engineering, Delft (Netherlands)

2013-11-15

Reduced Activation Ferritic/Martensitic steels are being extensively studied because of their foreseen application in fusion and Generation IV fission reactors. To produce irradiation induced defects, Eurofer97 samples were implanted with helium at energies of 500 keV and 2 MeV and doses of 1 × 10{sup 15}–10{sup 16} He/cm{sup 2}, creating atomic displacements in the range 0.07–0.08 dpa. The implantation induced defects were characterized by positron beam Doppler Broadening (DB) and Thermal Desorption Spectroscopy (TDS). Results show that up to ∼600 K peaks that can be attributed to He desorption from overpressured He{sub n}V{sub m} (n > m) clusters and vacancy assisted mechanism in the case of helium in the substitutional position. The temperature range 600–1200 K is related to the formation of larger clusters He{sub n}V{sub m} (n < m). The dissociation of the HeV and the phase transition attributed to a sharp peak in the TDS spectra at 1200 K. Above this temperature, the release of helium from bubbles is observed.

Study of helium diffusion, implanted at a cyclotron, in face-centered cubic metals: Au, Ag and Al

International Nuclear Information System (INIS)

Sciani, V.

1985-01-01

Helium in metals is produced by nuclear reactions of energetic particles. In nuclear technology the interest on helium in metals is import, due to its production by (n, α) reaction. Because helium has extremely low solubility in metals, the precipitation in the form of filled bubbles at elevated temperatures occurs, which have detrimental effects on mechanical properties and may limit the lifetime of structural components. One typical example is the high temperature embrittlement. The nucleation and growth of the bubbles strongly depends on the mobility of the helium. This work presents the study of helium diffusion in Au, Ag and Al at temperatures above room temperature. The helium created by (n, α) reactions has been simulated by homogeneous alpha particles implantation in cyclotron, at room temperature, in specimens of thicknesses between 5 and 50 μm and helium concentration between 10 -3 to 10 ppm. After implantation, the specimens were dropped in a furnace in a UHV-chamber and the diffusion was measured by observing the He-release during linear and isothermal annealings. The occurence of free diffusion was comparing the dependence of release kinetics on helium concentration, sample thickness, time and heating rate to diffusion theory and is clearly separeted from agglomeration process. The diffusion constants of helium in Au, Ag and Al follow an Arrhenius behavior, with: Au:D o =10 -1.0 cm 2 /s ΔH=1.70eV Ag:D 0 =10 -1.2 cm 2 /s ΔH=1.51eV Al:D o =10 +0.5 cm 2 /s ΔH=1.40eV. The results are compared to self-diffusion and to the diffusion of other gases in these metals. Comparison with theoretical estimates favours the vacancy mechanism for helium diffusion in Au, Ag and Al. (author) [pt

Radiolysis study of actinide complexing agent by irradiation with helium ion beam

International Nuclear Information System (INIS)

Sugo, Yumi; Taguchi, Mitsumasa; Sasaki, Yuji; Hirota, Koichi; Kimura, Takaumi

2009-01-01

α-Radiolysis of N,N,N',N'-tetraoctyldiglycolamide (TODGA) in n-dodecane was investigated by the irradiation with helium ion beam provided by a tandem accelerator. The radiation chemical yield for the degradation of TODGA by helium ion beam irradiation was less than that by γ-rays irradiation. It is considered that the radical cations of n-dodecane, which contribute to the charge transfer reaction with the TODGA molecules, decrease by recombination in track by high LET radiations such as α-particles.

Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation

International Nuclear Information System (INIS)

Cheng-Sen, Liu; Yu-Jia, Fan; Nan, Zhang; Li, Guan; Yuan, Yao; De-Zhen, Wang

2010-01-01

A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally. (physics of gases, plasmas, and electric discharges)

Transport and extraction of radioactive ions stopped in superfluid helium

NARCIS (Netherlands)

Huang, WX; Dendooven, P; Gloos, K; Takahashi, N; Arutyunov, K; Pekola, JP; Aysto, J

A new approach to convert a high energy beam to a low energy one, which is essential for the next generation radioactive ion beam facilities, has been proposed and tested at Jyvaskyla, Finland. An open Ra-223 alpha-decay-recoil source has been used to produce radioactive ions in superfluid helium.

The modification of LiTaO3 crystal by low-energy He-ion implantation

International Nuclear Information System (INIS)

Pang, L.L.; Wang, Z.G.; Jin, Y.F.; Yao, C.F.; Cui, M.H.; Sun, J.R.; Shen, T.L.; Wei, K.F.; Zhu, Y.B.; Sheng, Y.B.; Li, Y.F.

2012-01-01

Highlights: ► LiTaO 3 crystal was implanted by 250 keV He + . ► We report the surface and transmittance of LiTaO 3 change with the fluence and time. ► New phenomena (self-splitting, self-exfoliation, self-recovery) occurred. ► Evolvement of defects and the behavior of helium were discussed. - Abstract: The effects of He-ion implantation on the surface morphology and transmittance of LiTaO 3 single crystals are investigated. The samples were implanted with 250 keV He-ion at different fluences at room temperature. The results show that the surface morphology and transmittance of implanted samples strongly depend on the ion fluence and the time when the samples expose to the air up to 60 days. When the fluence is above 1.0 × 10 16 He + /cm 2 , the transmission spectra indicate that a high concentration of defects is created. 3D-profile images show that at the higher fluence a great many triangular stripes appear on the surface of the samples. After 60 days, the recovery of the transmittance occurs and varies with the fluence. For the sample at the fluence of 5.0 × 10 16 He + /cm 2 , the raised stripes on the surface evolve into narrow cracks. Regional exfoliation, however, occurs on the surface of the sample with the fluence of 1.0 × 10 17 He + /cm 2 . According to the experimental results and simulation of SRIM 2008 code, the evolvement of defects and the behavior of He are discussed.

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

Directory of Open Access Journals (Sweden)

Patrick Philipp

2016-11-01

Full Text Available The analysis of polymers by secondary ion mass spectrometry (SIMS has been a topic of interest for many years. In recent years, the primary ion species evolved from heavy monatomic ions to cluster and massive cluster primary ions in order to preserve a maximum of organic information. The progress in less-damaging sputtering goes along with a loss in lateral resolution for 2D and 3D imaging. By contrast the development of a mass spectrometer as an add-on tool for the helium ion microscope (HIM, which uses finely focussed He+ or Ne+ beams, allows for the analysis of secondary ions and small secondary cluster ions with unprecedented lateral resolution. Irradiation induced damage and depth profiling capabilities obtained with these light rare gas species have been far less investigated than ion species used classically in SIMS. In this paper we simulated the sputtering of multi-layered polymer samples using the BCA (binary collision approximation code SD_TRIM_SP to study preferential sputtering and atomic mixing in such samples up to a fluence of 1018 ions/cm2. Results show that helium primary ions are completely inappropriate for depth profiling applications with this kind of sample materials while results for neon are similar to argon. The latter is commonly used as primary ion species in SIMS. For the two heavier species, layers separated by 10 nm can be distinguished for impact energies of a few keV. These results are encouraging for 3D imaging applications where lateral and depth information are of importance.

Observations of energetic helium ions in the Earth's radiation belts during a sequence of geomagnetic storms

International Nuclear Information System (INIS)

Spjeldvik, W.N.; Fritz, T.A.

1981-01-01

Every year a significant number of magnetic storms disturb the earth's magnetosphere and the trapped particle populations. In this paper, we present observations of energetic (MeV) helium ions made with Explorer 45 during a sequence of magnetic storms during June through December of 1972. The first of these storms started on June 17 and had a Dst index excursion to approx.190 gamma, and the MeV helium ions were perturbed primarily beyond 3 earth radii in the equatorial radiation belts with a typical flux increase of an order of magnitude at L = 4. The second storm period took place during August and was associated with very major solar flare activity. Although the Dst extremum was at best 35 gamma less than the June storm, this period can be characterized as irregular (or multi-storm) with strong compression of the magnetosphere and very large (order of magnitude) MeV helium ion flux enhancements down to Lapprox.2. Following this injection the trapped helium ion fluxes showed positive spectral slope with the peak beyond 3.15 MeV at L = 2.5; and at the lowest observable L shells (Lapprox.2--3) little flux decay (tau>100 days) was seen during the rest of the year. Any effects of two subsequent major magnetic storms in September and November were essentially undetectable in the prolonged after-effect of the August solar flare associated MeV helium ion injection. The helium ion radial profile of the phase space density showed a significant negative slope during this period, and we infer that radial diffusion constitutes a significant loss of helium ions on L shells above Lapprox. =4 during the aftermath of the August 1972 magnetic storm

Temperature dependent mobility measurements of alkali earth ions in superfluid helium

Science.gov (United States)

Putlitz, Gisbert Zu; Baumann, I.; Foerste, M.; Jungmann, K.; Riediger, O.; Tabbert, B.; Wiebe, J.; Zühlke, C.

1998-05-01

Mobility measurements of impurity ions in superfluid helium are reported. Alkali earth ions were produced with a laser sputtering technique and were drawn inside the liquid by an electric field. The experiments were carried out in the temperature region from 1.27 up to 1.66 K. The temperature dependence of the mobility of Be^+-ions (measured here for the first time) differs from that of the other alkali earth ions Mg^+, Ca^+, Sr^+ and Ba^+, but behaves similar to that of He^+ (M. Foerste, H. Günther, O. Riediger, J. Wiebe, G. zu Putlitz, Z. Phys. B) 104, 317 (1997). Theories of Atkins (A. Atkins, Phys. Rev.) 116, 1339 (1959) and Cole (M.W. Cole, R.A. Bachmann Phys. Rev. B) 15, 1388 (1977) predict a different defect structure for He^+ and the alkali earth ions: the helium ion is assumed to form a snowball like structure whereas for the alkali earth ions a bubble structure is assumed. If the temperature dependence is a characteristic feature for the different structures, then it seems likely that the Be^+ ion builds a snowball like structure.

Electrical properties of polymer modified by metal ion implantation

International Nuclear Information System (INIS)

Wu Yuguang; Zhang Tonghe; Zhang Huixing; Zhang Xiaoji; Deng Zhiwei; Zhou Gu

2000-01-01

Polyethylene terephthalate (PET) has been modified by Ag, Cr, Cu and Si ion implantation with a dose range from 1x10 16 to 2x10 17 ions cm -2 using a metal vapor vacuum arc (MEVVA) source. The electrical properties of PET have been changed after metal ion implantation. The resistivity of implanted PET decreased obviously with an increase of ion dose. When metal ion dose of 2x10 17 cm -2 was selected, the resistivity of PET could be less than 10 Ω cm, but when Si ions are implanted, the resistivity of PET would be up to several hundred Ω cm. The results show that the conductive behavior of a metal ion implanted sample is obviously different from Si implantation one. The changes of the structure and composition have been observed with transmission electron microscope (TEM) and X-ray diffraction (XRD). The surface structure is varying after ion implantation and it is believed that the change would cause the improvement of the conductive properties. The mechanism of electrical conduction will be discussed

Synthesis of graphene by MEVVA source ion implantation

International Nuclear Information System (INIS)

Ying, J.J.; Xiao, X.H.; Dai, Z.G.; Wu, W.; Li, W.Q.; Mei, F.; Cai, G.X.; Ren, F.; Jiang, C.Z.

2013-01-01

Ion implantation provides a new synthesis route for graphene, and few-layered graphene synthesis by ion implantation has been reported. Here we show the synthesis of a single layer of high-quality graphene by Metal Vapor Vacuum Arc (MEVVA) source ion implantation. Polycrystalline nickel and copper thin films are implanted with MEVVA source carbon ions at 40 kV, followed by high-temperature thermal annealing and quenching. A Raman spectrum is applied to probe the quality and thickness of the prepared graphene. A single layer of high-quality graphene is grown on the nickel films, but not on the copper films. The growth mechanisms on the nickel and copper films are explained. MEVVA source ion implantation has been widely applied in industrial applications, demonstrating that this synthesis method can be generalized for industrial production

Annealing dislocation loops in OKh16N15M3T steel implanted by helium

International Nuclear Information System (INIS)

Utkelbaev, B.D.; Reutov, V.F.; Zhdan, G.T.

1993-01-01

With the use of electron microscopy a study was made into the influence of preliminary thermomechanical treatment on the process of dislocation loop development in austenitic stainless steel type OKh16N15M3T with helium on annealing. Preliminary treatment was shown to prevent dislocation loop formation to a greater or lesser extent. Preliminary 'cold' working and thermal ageing of the material are the most effective ways to suppress radiation defect formation when annealing helium implanted steel

Modification of medical metals by ion implantation of copper

Science.gov (United States)

Wan, Y. Z.; Xiong, G. Y.; Liang, H.; Raman, S.; He, F.; Huang, Y.

2007-10-01

The effect of copper ion implantation on the antibacterial activity, wear performance and corrosion resistance of medical metals including 317 L of stainless steels, pure titanium, and Ti-Al-Nb alloy was studied in this work. The specimens were implanted with copper ions using a MEVVA source ion implanter with ion doses ranging from 0.5 × 10 17 to 4 × 10 17 ions/cm 2 at an energy of 80 keV. The antibacterial effect, wear rate, and inflexion potential were measured as a function of ion dose. The results obtained indicate that copper ion implantation improves the antibacterial effect and wear behaviour for all the three medical materials studied. However, corrosion resistance decreases after ion implantation of copper. Experimental results indicate that the antibacterial property and corrosion resistance should be balanced for medical titanium materials. The marked deteriorated corrosion resistance of 317 L suggests that copper implantation may not be an effective method of improving its antibacterial activity.

In-situ deposition of sacrificial layers during ion implantation

International Nuclear Information System (INIS)

Anders, A.; Anders, S.; Brown, I.G.; Yu, K.M.

1995-02-01

The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer deposited prior to ion implantation can lead to an enhanced retained dose. However, a higher ion energy is required to obtain a similar implantation depth due to the stopping of ions in the sacrificial layer. It is desirable to have a sacrificial layer of only a few monolayers thickness which can be renewed after it has been sputtered away. We explain the concept and describe two examples: (i) metal ion implantation using simultaneously a vacuum arc ion source and filtered vacuum arc plasma sources, and (ii) Metal Plasma Immersion Ion Implantation and Deposition (MePIIID). In MePIIID, the target is immersed in a metal or carbon plasma and a negative, repetitively pulsed bias voltage is applied. Ions are implanted when the bias is applied while the sacrificial layer suffers sputtering. Low-energy thin film deposition - repair of the sacrificial layer -- occurs between bias pulses. No foreign atoms are incorporated into the target since the sacrificial film is made of the same ion species as used in the implantation phase

High energy ion implantation

International Nuclear Information System (INIS)

Ziegler, J.F.

1985-01-01

High energy ion implantation offers the oppertunity for unique structures in semiconductor processing. The unusual physical properties of such implantations are discussed as well as the special problems in masking and damage annealing. A review is made of proposed circuit structures which involve deep implantation. Examples are: deep buried bipolar collectors fabricated without epitaxy, barrier layers to reduce FET memory sensitivity to soft-fails, CMOS isolation well structures, MeV implantation for customization and correction of completed circuits, and graded reach-throughs to deep active device components. (orig.)

Plasma Immersion Ion Implantation in Radio Frequency Plasma

International Nuclear Information System (INIS)

Bora, B.; Bhuyan, H.; Wyndham, E.

2013-01-01

Plasma immersion ion implantation (PIII) has attracted wide interests since it emulates conventional ion-beam ion implantation (IBII) in niche applications. For instance, the technique has very high throughput, the implantation time is independent of the sample size, and samples with an irregular shape can be implanted without complex beam scanning or sample manipulation. For uniform ion implantation and deposition on to different substrates, like silicon, stainless steel etc., a capacitive coupled Radio frequency (RF), 13.6 MHz, plasma is used. During the PIII process, the physical parameters which are expected to play crucial rule in the deposition process like RF power, Negative pulse voltage and pulse duration, gas type and gas mixture, gas flow rates and the implantation dose are studied. The ion dose is calculated by dynamic sheath model and the plasma parameters are calculated from the V-I characteristic and power balance equation by homogeneous model of rf plasma discharge considering Ohmic as well as Stochastic heating. The correlations between the yield of the implantation process and the physical parameters as well as plasma parameters are discussed. (author)

Microstructure evolution in carbon-ion implanted sapphire

International Nuclear Information System (INIS)

Orwa, J. O.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Peng, J. L.; Rubanov, S.

2010-01-01

Carbon ions of MeV energy were implanted into sapphire to fluences of 1x10 17 or 2x10 17 cm -2 and thermally annealed in forming gas (4% H in Ar) for 1 h. Secondary ion mass spectroscopy results obtained from the lower dose implant showed retention of implanted carbon and accumulation of H near the end of range in the C implanted and annealed sample. Three distinct regions were identified by transmission electron microscopy of the implanted region in the higher dose implant. First, in the near surface region, was a low damage region (L 1 ) composed of crystalline sapphire and a high density of plateletlike defects. Underneath this was a thin, highly damaged and amorphized region (L 2 ) near the end of range in which a mixture of i-carbon and nanodiamond phases are present. Finally, there was a pristine, undamaged sapphire region (L 3 ) beyond the end of range. In the annealed sample some evidence of the presence of diamond nanoclusters was found deep within the implanted layer near the projected range of the C ions. These results are compared with our previous work on carbon implanted quartz in which nanodiamond phases were formed only a few tens of nanometers from the surface, a considerable distance from the projected range of the ions, suggesting that significant out diffusion of the implanted carbon had occurred.

Comparison of oxidation resistance of copper treated by beam-line ion implantation and plasma immersion ion implantation

International Nuclear Information System (INIS)

An Quanzhang; Li Liuhe; Hu Tao; Xin Yunchang; Fu, Ricky K.Y.; Kwok, D.T.K.; Cai Xun; Chu, Paul K.

2009-01-01

Copper which has many favorable properties such as low cost, high thermal and electrical conductivity, as well as easy fabrication and joining is one of the main materials in lead frames, interconnects, and foils in flexible circuits. Furthermore, copper is one of the best antibacterial materials. However, unlike aluminum oxide or chromium oxide, the surface copper oxide layer does not render sufficient protection against oxidation. In this work, in order to improve the surface oxidation resistance of Cu, Al and N were introduced into copper by plasma immersion ion implantation (PIII) and beam-line ion implantation (BII). The implantation fluences of Al and N were 2 x 10 17 ions cm -2 and 5 x 10 16 ions cm -2 , respectively. The implanted and untreated copper samples were oxidized in air at 260 deg. C for 1 h. The X-ray diffraction (XRD), scanning electron microscopy (SEM), as well as X-ray photoelectron spectroscopy (XPS) results indicate that both implantation methods can enhance the oxidation resistance of copper but to different extent. PIII is superior to BII in enhancing the oxidation resistance of copper. The effects and possible mechanisms are discussed.

Ion implantation of CdTe single crystals

International Nuclear Information System (INIS)

Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

2017-01-01

Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (10"1"7 1/cm"2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

Stopping Power of Solid Argon for Helium Ions

DEFF Research Database (Denmark)

Besenbacher, F.; Bøttiger, Jørgen; Grauersen, O.

1981-01-01

By means of the Rutherford-backscattering method, the stopping cross section of solid argon has been measured for 0.5–3 MeV helium ions to an accuracy of not, vert, similar3%. The results agree within the experimental accuracies with our earlier measurements for gaseous argon over the energy region...

Ion-implantation dense cascade data

International Nuclear Information System (INIS)

Winterbon, K.B.

1983-04-01

A tabulation is given of data useful in estimating various aspects of ion-implantation cascades in the nuclear stopping regime, particularly with respect to nonlinearity of the cascade at high energy densities. The tabulation is restricted to self-ion implantation. Besides power-cross-section cascade dimensions, various material properties are included. Scaling of derived quantities with input data is noted, so one is not limited to the values assumed by the author

Thermal stress resistance of ion implanted sapphire crystals

International Nuclear Information System (INIS)

Gurarie, V.N.; Jamieson, D.N.; Szymanski, R.; Orlov, A.V.; Williams, J.S.; Conway, M.

1999-01-01

Monocrystals of sapphire have been subjected to ion implantation with 86 keV Si - and 80 keV Cr - ions to doses in the range of 5x10 14 -5x10 16 cm -2 prior to thermal stress testing in a pulsed plasma. Above a certain critical dose ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance are determined. The critical dose for Si ions is shown to be much lower than that for Cr - ions. However, for doses exceeding 2x10 16 cm -2 the stress resistance parameter decreases to approximately the same value for both implants. The size of the implantation-induced crack nucleating centers and the density of the implantation-induced defects are considered to be the major factors determining the stress resistance of sapphire crystals irradiated with Si - and Cr - ions

Versatile high current metal ion implantation facility

International Nuclear Information System (INIS)

Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

1992-01-01

A metal ion implantation facility has been developed with which high current beams of practically all the solid metals of the periodic table can be produced. A multicathode, broad-beam, metal vapor vacuum arc ion source is used to produce repetitively pulsed metal ion beams at an extraction voltage of up to 100 kV, corresponding to an ion energy of up to several hundred kiloelectronvolts because of the ion charge state multiplicity, and with a beam current of up to several amps peak pulsed and several tens of milliamps time averaged delivered onto a downstream target. Implantation is done in a broad-beam mode, with a direct line of sight from ion source to target. Here we summarize some of the features of the ion source and the implantation facility that has been built up around it. (orig)

Plasma immersion ion implantation into insulating materials

International Nuclear Information System (INIS)

Tian Xiubo; Yang Shiqin

2006-01-01

Plasma immersion ion implantation (PIII) is an effective surface modification tool. During PIII processes, the objects to be treated are immersed in plasmas and then biased to negative potential. Consequently the plasma sheath forms and ion implantation may be performed. The pre-requirement of plasma implantation is that the object is conductive. So it seems difficult to treat the insulating materials. The paper focuses on the possibilities of plasma implantation into insulting materials and presents some examples. (authors)

Tribological properties of ion-implanted steels

International Nuclear Information System (INIS)

Iwaki, Masaya

1987-01-01

The tribological properties such as surface hardness, friction and wear have been studied for low carbon steels and tool steels implanted with many types of ion including metallic elements. The hardness measured by Vickers or Knoop hardness testers as a function of normal load is dependent on the implanted species, fluence and substrate. The friction coefficients measured by Bowden-Leben type of friction tests or detected during wear tests also depend on the implantation conditions. The improvement in the wear resistance, which is most important for industrial use of implanted materials, has been investigated for AISI H13 prehardened and tool steels implanted with nitrogen and boron ions. The relationship between hardness, friction and wear is discussed in comparison with the microcharacteristics such as composition and chemical bonding states measured by means of secondary ion mass spectrometry and X-ray photoelectron spectroscopy. It is concluded that the increase in hardness and/or the decrease in friction coefficient play(s) an important role in improving the wear resistance, and the relationship between relative wear volume and relative hardness is correlated for boron and nitrogen implantation. (orig.)

Amorphization of metals by ion implantation and ion beam mixing

International Nuclear Information System (INIS)

Rauschenbach, B.; Heera, V.

1988-01-01

Amorphous metallic systems can be formed either by high-fluence ion implantation of glassforming species or by irradiation of layered metal systems with inert gas ions. Both techniques and experimental examples are presented. Empirical rules are discussed which predict whether a given system can be transformed into an amorphous phase. Influence of temperature, implantation dose and pre-existing crystalline metal composition on amorphization is considered. Examples are given of the implantation induced amorphous structure, recrystallization and formation of quasicrystalline structures. (author)

Ion implantation of boron in germanium

International Nuclear Information System (INIS)

Jones, K.S.

1985-05-01

Ion implantation of 11 B + into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of 11 B + into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10 11 /cm 2 to 1 x 10 14 /cm 2 ) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses ( 12 /cm 2 ). Three damage related hole traps are produced by ion implantation of 11 B + . Two of these hole traps have also been observed in γ-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures ( 0 C). Boron, from room temperature implantation of BF 2 + into Ge, is not substitutionally active prior to a post implant annealing step of 250 0 C for 30 minutes. After annealing additional shallow acceptors are observed in BF 2 + implanted samples which may be due to fluorine or flourine related complexes which are electrically active

Enhanced Physicochemical and Biological Properties of Ion-Implanted Titanium Using Electron Cyclotron Resonance Ion Sources

Directory of Open Access Journals (Sweden)

Csaba Hegedűs

2016-01-01

Full Text Available The surface properties of metallic implants play an important role in their clinical success. Improving upon the inherent shortcomings of Ti implants, such as poor bioactivity, is imperative for achieving clinical use. In this study, we have developed a Ti implant modified with Ca or dual Ca + Si ions on the surface using an electron cyclotron resonance ion source (ECRIS. The physicochemical and biological properties of ion-implanted Ti surfaces were analyzed using various analytical techniques, such as surface analyses, potentiodynamic polarization and cell culture. Experimental results indicated that a rough morphology was observed on the Ti substrate surface modified by ECRIS plasma ions. The in vitro electrochemical measurement results also indicated that the Ca + Si ion-implanted surface had a more beneficial and desired behavior than the pristine Ti substrate. Compared to the pristine Ti substrate, all ion-implanted samples had a lower hemolysis ratio. MG63 cells cultured on the high Ca and dual Ca + Si ion-implanted surfaces revealed significantly greater cell viability in comparison to the pristine Ti substrate. In conclusion, surface modification by electron cyclotron resonance Ca and Si ion sources could be an effective method for Ti implants.

Corrosion resistance of uranium with carbon ion implantation

International Nuclear Information System (INIS)

Liang Hongwei; Yan Dongxu; Bai Bin; Lang Dingmu; Xiao Hong; Wang Xiaohong

2008-01-01

The carbon modified layers prepared on uranium surface by carbon ion implantation, gradient implantation, recoil implantation and ion beam assisted deposition process techniques were studied. Depth profile elements of the samples based on Auger electron spectroscopy, phase composition identified by X-ray diffraction as well as corrosion resistance of the surface modified layers by electrochemistry tester and humid-thermal oxidation test were carried out. The carbon modified layers can be obtained by above techniques. The samples deposited with 45 keV ion bombardment, implanted by 50 keV ions and implanted with gradient energies are of better corrosion resistance properties. The samples deposited carbon before C + implantation and C + assisted deposition exhibit worse corrosion resistance properties. The modified layers are dominantly dot-corraded, which grows from the dots into substructure, however, the assisted deposition samples have comparatively high carbon composition and are corraded weakly. (authors)

Tritium Decay Helium-3 Effects in Tungsten

Energy Technology Data Exchange (ETDEWEB)

Shimada, M. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Merrill, B. J. [Idaho National Lab. (INL), Idaho Falls, ID (United States)

2016-06-01

A critical challenge for long-term operation of ITER and beyond to a Demonstration reactor (DEMO) and future fusion reactor will be the development of plasma-facing components (PFCs) that demonstrate erosion resistance to steady-state/transient heat fluxes and intense neutral/ion particle fluxes under the extreme fusion nuclear environment, while at the same time minimizing in-vessel tritium inventories and permeation fluxes into the PFC’s coolant. Tritium will diffuse in bulk tungsten at elevated temperatures, and can be trapped in radiation-induced trap site (up to 1 at. % T/W) in tungsten [1,2]. Tritium decay into helium-3 may also play a major role in microstructural evolution (e.g. helium embrittlement) in tungsten due to relatively low helium-4 production (e.g. He/dpa ratio of 0.4-0.7 appm [3]) in tungsten. Tritium-decay helium-3 effect on tungsten is hardly understood, and its database is very limited. Two tungsten samples (99.99 at. % purity from A.L.M.T. Co., Japan) were exposed to high flux (ion flux of 1.0x1022 m-2s-1 and ion fluence of 1.0x1026 m-2) 0.5%T2/D2 plasma at two different temperatures (200, and 500°C) in Tritium Plasma Experiment (TPE) at Idaho National Laboratory. Tritium implanted samples were stored at ambient temperature in air for more than 3 years to investigate tritium decay helium-3 effect in tungsten. The tritium distributions on plasma-exposed was monitored by a tritium imaging plate technique during storage period [4]. Thermal desorption spectroscopy was performed with a ramp rate of 10°C/min up to 900°C to outgas residual deuterium and tritium but keep helium-3 in tungsten. These helium-3 implanted samples were exposed to deuterium plasma in TPE to investigate helium-3 effect on deuterium behavior in tungsten. The results show that tritium surface concentration in 200°C sample decreased to 30 %, but tritium surface concentration in 500°C sample did not alter over the 3 years storage period, indicating possible tritium

Channeling effect for low energy ion implantation in Si

International Nuclear Information System (INIS)

Cho, K.; Allen, W.R.; Finstad, T.G.; Chu, W.K.; Liu, J.; Wortman, J.J.

1985-01-01

Ion implantation is one of the most important processes in semiconductor device fabrication. Due to the crystalline nature of Si, channeling of implanted ions occurs during this process. Modern devices become smaller and shallower and therefore require ion implantation at lower energies. The effect of channeling on ion implantation becomes a significant problem for low energy ion implantation. The critical angle for axial and planar channeling increases with decreasing energy. This corresponds to an increased probability for channeling with lowering of ion energy. The industry approach to avoid the channeling problem is to employ a tilt angle of 7 0 between the ion implantation direction and the surface normal. We approach the problem by mapping major crystalline axes and planes near the [100] surface normal. Our analysis indicates that a 7 0 tilt is not an optimum selection in channeling reduction. Tilt angles in the range 5 0 to 6 0 combined with 7 0 +- 0.5 0 rotation from the (100) plane are better selections for the reduction of the channeling effect. The range of suitable angles is a function of the implantation energy. Implantations of boron along well specified crystallographic directions have been carried out by careful alignment and the resulting boron profiles measured by SIMS. (orig.)

Characterization of nitrogen-ion-implanted aluminium

International Nuclear Information System (INIS)

Rauschenbach, B.; Breuer, K.; Leonhardt, G.

1990-01-01

Aluminium has been implanted with nitrogen ions at different temperatures. The implanted samples have been characterized by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS). Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES and XPS from the nitrogen-ion-beam-induced effects. The chemical state of Al, N, O and C was identified by deconvolution of the measured spectra. In general, there were double-peak structures observed for N 1s and O 1s, identified as contributions from nitrides and weakly bound nitrogen, and oxides and weakly bound oxygen, respectively. Auger analysis confirms the influence of the nitrogen ion fluence on the shape of the concentration distribution. The influence of temperature on the chemical state of implanted aluminium and on the concentration distribution is discussed. (orig.)

The effects of ion irradiation on the micromechanical fracture strength and hardness of a self-passivating tungsten alloy

Energy Technology Data Exchange (ETDEWEB)

Lessmann, Moritz T., E-mail: mor.lessmann@gmail.com [School of Mechanical Aerospace and Civil Engineering, The University of Manchester, Manchester (United Kingdom); CCFE, Culham Science Centre, Abingdon (United Kingdom); Sudić, Ivan; Fazinić, Stjepko; Tadić, Tonči [Rudjer Bošković Institute, Bijenička cesta 54, 10000 Zagreb (Croatia); Calvo, Aida [Ceit-IK4 and Tecnun (University of Navarra), San Sebastian (Spain); Hardie, Christopher D.; Porton, Michael [CCFE, Culham Science Centre, Abingdon (United Kingdom); García-Rosales, Carmen [Ceit-IK4 and Tecnun (University of Navarra), San Sebastian (Spain); Mummery, Paul M. [School of Mechanical Aerospace and Civil Engineering, The University of Manchester, Manchester (United Kingdom)

2017-04-01

An ultra-fine grained self-passivating tungsten alloy (W88-Cr10-Ti2 in wt.%) has been implanted with iodine ions to average doses of 0.7 and 7 dpa, as well as with helium ions to an average concentration of 650 appm. Pile-up corrected Berkovich nanoindentation reveals significant irradiation hardening, with a maximum hardening of 1.9 GPa (17.5%) observed. The brittle fracture strength of the material in all implantation conditions was measured through un-notched cantilever bending at the microscopic scale. All cantilever beams failed catastrophically in an intergranular fashion. A statistically confirmed small decrease in strength is observed after low dose implantation (−6%), whilst the high dose implantation results in a significant increase in fracture strength (+9%), further increased by additional helium implantation (+16%). The use of iodine ions as the implantation ion type is justified through a comparison of the hardening behaviour of pure tungsten under tungsten and iodine implantation.

Modification of polyvinyl alcohol surface properties by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Pukhova, I.V., E-mail: ivpuhova@mail.ru [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Kurzina, I.A. [National Research Tomsk State University, 36 Lenin Ave, Tomsk 634050 (Russian Federation); Savkin, K.P. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation); Laput, O.A. [National Research Tomsk Polytechnic University, 30 Lenin Ave, Tomsk 634050 (Russian Federation); Oks, E.M. [Institute of High Current Electronics, 2/3 Akademichesky Ave, Tomsk 634055 (Russian Federation)

2017-05-15

We describe our investigations of the surface physicochemical properties of polyvinyl alcohol modified by silver, argon and carbon ion implantation to doses of 1 × 10{sup 14}, 1 × 10{sup 15} and 1 × 10{sup 16} ion/cm{sup 2} and energies of 20 keV (for C and Ar) and 40 keV (for Ag). Infrared spectroscopy (IRS) indicates that destructive processes accompanied by chemical bond (−C=O) generation are induced by implantation, and X-ray photoelectron spectroscopy (XPS) analysis indicates that the implanted silver is in a metallic Ag3d state without stable chemical bond formation with polymer chains. Ion implantation is found to affect the surface energy: the polar component increases while the dispersion part decreases with increasing implantation dose. Surface roughness is greater after ion implantation and the hydrophobicity increases with increasing dose, for all ion species. We find that ion implantation of Ag, Ar and C leads to a reduction in the polymer microhardness by a factor of five, while the surface electrical resistivity declines modestly.

Hip implants - Paper VI - Ion concentrations

Energy Technology Data Exchange (ETDEWEB)

Sargeant, A. [Department of Biological Sciences, Ohio Northern University, Ada, OH 45810 (United States); Goswami, T. [Department of Mechanical Engineering, Ohio Northern University, Ada, OH 45810 (United States)]. E-mail: t-goswami@onu.edu

2007-07-01

Total hip-joint arthroplasty is performed in increasing numbers where it translates to about 0.16-0.2% of population per year in industrial countries. In most cases, an implant is a metallic component articulating with a metal, ceramic or poly-ethylene liner as seen in the case of hip, knee and spine. The metal implants release ions in vivo. Therefore, there is a need to study metallic implants and ions released as a result. Toxic concentrations of ions can lead to many adverse physiological effects, including cytotoxicity, genotoxicity, carcinogenicity, and metal sensitivity. There is a need to map ion concentrations establishing boundaries between normal and toxic levels; which however, does not exist. Reference levels of ion concentrations in body fluids and tissues determined by many studies are compiled, reviewed, and presented in this paper. The concentrations of ions released from different alloys, including cobalt, chromium, nickel, molybdenum titanium, aluminum, and vanadium, are presented in this paper. This paper reviews the literature pertaining to clinical data on metal ion concentrations in patients with metal joint prostheses, and laboratory data on the physiological effects of the metals.

Transverse microanalysis of high energy Ion implants

Energy Technology Data Exchange (ETDEWEB)

Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

Transverse microanalysis of high energy Ion implants

Energy Technology Data Exchange (ETDEWEB)

Dooley, S P; Jamieson, D N; Nugent, K W; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

Very broad beam metal ion source for large area ion implantation application

International Nuclear Information System (INIS)

Brown, I.; Anders, S.; Dickinson, M.R.; MacGill, R.A.; Yao, X.

1993-01-01

The authors have made and operated a very broad beam version of vacuum arc ion source and used it to carry out high energy metal ion implantation of a particularly large substrate. A multiple-cathode vacuum arc plasma source was coupled to a 50 cm diameter beam extractor (multiple aperture, accel-decel configuration) operated at a net extraction voltage of up to 50 kV. The metal ion species chosen were Ni and Ta. The mean ion charge state for Ni and Ta vacuum arc plasmas is 1.8 and 2.9, respectively, and so the mean ion energies were up to about 90 and 145 keV, respectively. The ion source was operated in a repetitively pulsed mode with pulse length 250 μs and repetition rate several pulses per second. The extracted beam had a gaussian profile with FWHM about 35 cm, giving a nominal beam area of about 1,000 cm 2 . The current of Ni or Ta metal ions in the beam was up to several amperes. The targets for the ion implantation were a number of 24-inch long, highly polished Cu rails from an electromagnetic rail gun. The rails were located about 80 cm away from the ion source extractor grids, and were moved across a diameter of the vessel in such a way as to maximize the uniformity of the implant along the rail. The saturation retained dose for Ta was limited to about 4 x 10 16 cm -2 because of the rather severe sputtering, in accordance with the theoretical expectations for these implantation conditions. Here they describe the ion source, the implantation procedure, and the kinds of implants that can be produced in this way

Cell adhesion control by ion implantation into extra-cellular matrix

International Nuclear Information System (INIS)

Suzuki, Yoshiaki; Kusakabe, Masahiro; Kaibara, Makoto; Iwaki, Masaya; Sasabe, Hiroyuki; Nishisaka, Tsuyoshi

1994-01-01

Cell adhesion control of polymer surfaces by ion implantation into polymers and extra-cellular matrix has been studied by means of in vitro adhesion measurements of the carcinoma of the cervix (HeLa cell). The specimens used were polystyrene (PS), oxygen plasma treated polystyrene (PS-O), extra-cellular matrix (Collagen: Type I) coated polystyrene (PS-C), and gelatin coated polystyrene (PS-G). Ne + , Na + , and Ar + implantations were performed with a fluence of 1x10 15 ions/cm 2 at energies of 50, 100 and 150 keV. The chemical and physical structures of ion implanted specimens have been investigated by Fourier transform infrared spectroscopy (FT-IR-ATR), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Ion implanted PS demonstrated a dramatic improvement of adhesion of HeLa cell. HeLa cell adhered only to ion implanted circular domains of a diameter about 0.1 mm on PS. By contrast, ion implanted PS-C, PS-G and PS-O domains inhibited the cell adhesion. These phenomena were observed on Ne + , Na + , and Ar + implanted specimens at energies of 50, 100, and 150 keV. Ion implantation broke the original chemical bonds to form new radicals such as =C=O, condensed rings, C-C, C-O and OH radical. Ion implanted PS had a large amount of new radicals compared with that of PS-C, PS-G and PS-O. Ion implantation broke NH and NH 3 bonds originating from amino acid in PS-C and PS-G. OH and =C=O caused by oxygen treatment in PS-O were also destroyed by ion implantation. It is concluded that cell adhesion to ion implanted PS was caused by carbon structure and new radicals induced by ion implantation. The inhibition of HeLa cell adhesion on PS-C, PS-G and PS-O was caused by the destruction of cell adhesion properties of amino acid, OH and =C=O by radiation effects. ((orig.))

High energy ion implantation for IC processing

International Nuclear Information System (INIS)

Oosterhoff, S.

1986-01-01

In this thesis the results of fundamental research on high energy ion implantation in silicon are presented and discussed. The implantations have been carried out with the 500 kV HVEE ion implantation machine, that was acquired in 1981 by the IC technology and Electronics group at Twente University of Technology. The damage and anneal behaviour of 1 MeV boron implantations to a dose of 10 13 /cm 2 have been investigated as a function of anneal temperature by sheet resistance, Hall and noise measurements. (Auth.)

Sputtering of solid nitrogen by keV helium ions

DEFF Research Database (Denmark)

Ellegaard, O.; Schou, Jørgen; Sørensen, H.

1993-01-01

Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

The KFKI 150 kV ion-implanter

International Nuclear Information System (INIS)

Pasztor, E.

1976-09-01

The description of the ion-implanter of 150 keV maximum energy designed and built in the Central Research Institute for Physics, Budapest is given. The implanter fulfils all technological and safety requirements of the industry. In addition to B,P and As other elements up to mass-number 76 can also be implanted by help of the Danfysik 911 type ion source. The 3x10 -6 Torr operational pressure is provided by three turbomolecular pumps. The maximum dose is 1 μCb/cm 2 min and to ensure uniformity of the implantation on the 100x105 mm 2 target area the ion beam is swept electrostatically. According to the testing experiments the inhomogenity can be taken to be +-1.3%. (Sz.N.Z.)

Helium behaviour in nuclear glasses

International Nuclear Information System (INIS)

Fares, T.

2011-01-01

The present thesis focuses on the study of helium behavior in R7T7 nuclear waste glass. Helium is generated by the minor actinides alpha decays incorporated in the glass matrix. Therefore, four types of materials were used in this work. These are non radioactive R7T7 glasses saturated with helium under pressure, glasses implanted with 3 He + ions, glasses doped with curium and glasses irradiated in nuclear reactor. The study of helium solubility in saturated R7T7 glass has shown that helium atoms are inserted in the glass free volume. The results yielded a solubility of about 10 16 at. cm -3 atm. -1 . The incorporation limit of helium in this type of glass has been determined; its value amounted to about 2*10 21 at. cm -3 , corresponding to 2.5 at.%. Diffusion studies have shown that the helium migration is controlled by the single population dissolved in the glass free volume. An ideal diffusion model was used to simulate the helium release data which allowed to determine diffusion coefficients obeying to the following Arrhenius law: D = D 0 exp(-E a /kBT), where D 0 = 2.2*10 -2 and 5.4*10 -3 cm 2 s -1 and E a = 0.61 eV for the helium saturated and the curium doped glass respectively. These results reflect a thermally activated diffusion mechanism which seems to be not influenced by the glass radiation damage and helium concentrations studied in the present work (up to 8*10 19 at. g -1 , corresponding to 0.1 at.%). Characterizations of the macroscopic, structural and microstructural properties of glasses irradiated in nuclear reactor did not reveal any impact associated with the presence of helium at high concentrations. The observed modifications i.e. a swelling of 0.7 %, a decrease in hardness by 38 %, an increase between 8 and 34 % of the fracture toughness and a stabilization of the glass structure under irradiation, were attributed to the glass nuclear damage induced by the irradiation in reactor. Characterizations by SEM and TEM of R7T7 glasses implanted

Depth distribution of nitrogen in silicon from plasma ion implantation

International Nuclear Information System (INIS)

Vajo, J.J.; Williams, J.D.; Wei, R.; Wilson, R.G.; Matossian, J.N.

1994-01-01

Plasma Ion Implantation (PII) is an ion implantation technique that eliminates the line-of-sight restriction of conventional ion-beam implantation and therefore allows for cost effective surface modification of large-scale objects or large-number of small-scale objects. In PII, a part to be implanted is immersed in a low-pressure (10 -4 --10 -5 Torr), partially-ionized plasma that surrounds the part with a plasma sheath. The part is negatively pulse biased up to 100 keV using a repetitive train (100--1,000 Hz) of short-duration (10--40 μsec) voltage pulses. The applied voltage develops across the sheath and accelerates plasma ions into the surface, implanting them omnidirectionally and simultaneously over the entire surface of the part. The depth distribution of the implanted ions influences the extent and type of surface modification achieved and depends upon many factors. These include three rise and fall time of the voltage-pulse waveform, the voltage-pulse amplitude, the ion specie, the ion density, and the temperature of the target. Understanding the contributions to the depth distribution from each of these factors will enable prediction of conditions that will be useful for implantation of large complex parts. To investigate the contributions to the measured depth distributions from these factors nitrogen, predominantly as N + 2 , has been implanted into silicon using PII at 50 and 100 keV (25 and 50 keV per N atom). The implanted depth distributions have been determined using secondary ion mass spectroscopy and Auger electron spectroscopy depth profiling. The distributions differ from the typical, approximately Gaussian, profiles that result from conventional mass selected monoenergetic ion beam implantation. In comparison with ion beam implants and numerical simulations the profiles appear ''filled-in'' with an approximately constant nitrogen concentration for depths less than the expected average ion range

Ion implantation in metals

International Nuclear Information System (INIS)

Vook, F.L.

1977-02-01

The application of ion beams to metals is rapidly emerging as a promising area of research and technology. This report briefly describes some of the recent advances in the modification and study of the basic properties of metals by ion implantation techniques. Most of the research discussed illustrates some of the new and exciting applications of ion beams to metals which are under active investigation at Sandia Laboratories, Albuquerque

Surface modification of metals by ion implantation

International Nuclear Information System (INIS)

Iwaki, Masaya

1988-01-01

Ion implantation in metals has attracted the attention as a useful technology for the formation of new metastable alloys and compounds in metal surface layers without thermal equilibrium. Current studies of metal surface modification by ion implantation with high fluences have expanded from basic research areas and to industrial applications for the improvement of life time of tools. Many results suggest that the high fluence implantation produces the new surface layers with un-expected microscopic characteristics and macroscopic properties due to implant particles, radiation damage, sputtering, and knock-on doping. In this report, the composition, structure and chemical bonding state in surface layers of iron, iron-based alloy and aluminum sheets implanted with high fluences have been investigated by means of secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Tribological properties such as hardness, friction and wear are introduced. (author)

Current trends in ion implantation

International Nuclear Information System (INIS)

Gwilliam, R.M.

2001-01-01

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing one of these challenges, namely the need for tighter control of implant uniformity and dose. Additionally, some vacancy-mediated processes are described with the implication that these may provide areas in which positron annihilation spectroscopy could make a significant contribution. (orig.)

Some aspects of ion implantation in semiconductors

International Nuclear Information System (INIS)

Klose, H.

1982-01-01

The advantages and disadvantages of ion implantation in the application of semiconductor technology are reviewed in short. This article describes some aspects of the state of the art and current developments of nonconventional annealing procedures, ion beam gettering of deep impurities, special applications of ion implantation using low or high energy ions and GaAs-electronics, respectively. Radiation defects in Si and the nonexponential emission and capture processes in GaAsP are discussed. Final future trends of ion beam methods in semiconductor production technology are summarized. (author)

Development of vertical compact ion implanter for gemstones applications

Science.gov (United States)

Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

2014-08-01

Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

Development of vertical compact ion implanter for gemstones applications

Energy Technology Data Exchange (ETDEWEB)

Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science (Gems and Jewelry), Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D.; Tippawan, U.; Yu, L.D.; Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2014-08-15

Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

Development of vertical compact ion implanter for gemstones applications

International Nuclear Information System (INIS)

Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L.D.; Singkarat, S.

2014-01-01

Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented

Lithium ion implantation effects in MgO (100)

NARCIS (Netherlands)

van Huis, MA; Fedorov, AV; van Veen, A; Labohm, F; Schut, H; Mijnarends, PE; Kooi, BJ; De Hosson, JTM; Triftshauser, W; Kogel, G; Sperr, P

2001-01-01

Single crystals of MgO (100) were implanted with 10(16) (6)Li ions cm(-2) at an energy of 30 keV. After ion implantation the samples were annealed isochronally in air at temperatures up to 1200K. After implantation and after each annealing step, the defect evolution was monitored with optical

Binding of copper and nickel to cavities in silicon formed by helium ion implantation

International Nuclear Information System (INIS)

Myers, S.M.; Follstaedt, D.M.; Bishop, D.M.

1993-01-01

Cavities formed in Si by He ion implantation and annealing are shown to be strong traps for Cu and Ni impurities. Experiments utilizing ion-beam analysis and transmission electron microscopy indicate that Cu is trapped at the internal surfaces of cavities up to ∼1 monolayer coverage with a binding energy of 2.2±0.2 eV relative to solution. This is greater than the heat of solution from the precipitated Cu 3 Si phase, determined to be 1.7 eV in agreement with earlier work. Copper at cavity-wall sites is reversibly replaced by H during heating in H 2 gas, indicating the relative stability of the two surface terminations. Initial results for Ni impurities indicate that trapping at cavities is again energetically preferred to silicide formation. The saturation coverage of Ni on the internal surfaces, however, is an order of magnitude smaller for Ni than Cu, consistent with published studies of external-surface adsorption. These results suggest that cavity trapping may getter metallic impurities in Si more effectively than methods based on silicide precipitation

Behavior of PET implanted by Ti, Ag, Si and C ion using MEVVA implantation

International Nuclear Information System (INIS)

Wu Yuguang; Zhang Tonghe; Zhang Yanwen; Zhang Huixing; Zhang Xiaoji; Zhou Gu

2001-01-01

Polyethylene terephthalane (PET) has been modified with Ti, Ag, Si and C ions from a metal vapor arc source (MEVVA). Ti, Ag, Si and C ions were implanted with acceleration voltage 40 kV to fluences ranging from 1x10 16 to 2x10 17 cm -2 . The surface of implanted PET darkened with increasing ion dose, when the metal ion dose was greater than 1x10 17 cm -2 the color changed to metallic bright. The surface resistance decreases by 5-6 orders of magnitude with increasing dose. The resistivity is stable after long-term storage. The depth of Ti- and Ag-implanted layer is approximately 150 and 80 nm measured by Rutherford backscattering (RBS), respectively. TEM photos revealed the presence of Ti and Ag nano-meter particles on the surface resulting from the high-dose implantation. Ti and Ag ion implantations improved conductivity and wear resistance significantly. The phase and structural changes were obtained by X-ray diffraction (XRD). It can be seen that nano-meter particles of Ti precipitation, TiO 2 and Ti-carbides have been formed in implanted layer. Nano-hardness of implanted PET has been measured by a nano-indenter. The results show that the surface hardness, modulus and wear resistance could be increased

Channeling ion implantation through palladium films

International Nuclear Information System (INIS)

Ishiwara, H.; Furukawa, S.

1975-01-01

The possibility of channeling ion implantation into semiconductors through polycrystalline metallic layers is studied. Minimum values and standard deviations of channeling angular yield in polycrystalline Pd 2 Si layers formed on Si have been measured by protons and 4 He, and 14 N ion backscattering and channeling measurements. Depth distributions of the spread of crystallite orientations and scattering centers such as lattice defects have been separately derived by using the above two quantities. It has been concluded that the channeling-ion-implantation technique will become a practical one by using the parallel scanning system

Projectile electron loss in collisions of light charged ions with helium

International Nuclear Information System (INIS)

Yin Yong-Zhi; Chen Xi-Meng; Wang Yun

2014-01-01

We investigate the single-electron loss processes of light charged ions (Li 1+,2+ , C 2+,3+,5+ , and O 2+,3+ ) in collisions with helium. To better understand the experimental results, we propose a theoretical model to calculate the cross section of projectile electron loss. In this model, an ionization radius of the incident ion was defined under the classical over-barrier model, and we developed ''strings'' to explain the processes of projectile electron loss, which is similar with the molecular over-barrier model. Theoretical calculations are in good agreement with the experimental results for the cross section of single-electron loss and the ratio of double-to-single ionization of helium associated with one-electron loss. (atomic and molecular physics)

Ion implantation and fracture toughness of ceramics

International Nuclear Information System (INIS)

Clark, J.; Pollock, J.T.A.

1985-01-01

Ceramics generally lack toughness which is largely determined by the ceramic surface where stresses likely to cause failure are usually highest. Ion implantation has the capacity to improve the surface fracture toughness of ceramics. Significantly reduced ion size and reactivity restrictions exist compared with traditional methods of surface toughening. We are studying the effect of ion implantation on ceramic fracture toughness using indentation testing as the principal tool of analysis

Synthesis of titanium sapphire by ion implantation

International Nuclear Information System (INIS)

Morpeth, L.D.; McCallum, J.C.; Nugent, K.W.

1998-01-01

Since laser action was first demonstrated in titanium sapphire (Ti:Al 2 O 3 ) in 1982, it has become the most widely used tunable solid state laser source. The development of a titanium sapphire laser in a waveguide geometry would yield an elegant, compact, versatile and highly tunable light source useful for applications in many areas including optical telecommunications. We are investigating whether ion implantation techniques can be utilised to produce suitable crystal quality and waveguide geometry for fabrication of a Ti:Al 2 O 3 waveguide laser. The implantation of Ti and O ions into c-axis oriented α-Al 2 O 3 followed by subsequent thermal annealing under various conditions has been investigated as a means of forming the waveguide and optimising the fraction of Ti ions that have the correct oxidation state required for laser operation. A Raman Microprobe is being used to investigate the photo-luminescence associated with Ti 3+ ion. Initial photoluminescence measurements of ion implanted samples are encouraging and reveal a broad luminescence profile over a range of ∼ .6 to .9 μm, similar to that expected from Ti 3+ . Rutherford Backscattering and Ion Channelling analysis have been used to study the crystal structure of the samples following implantation and annealing. This enables optimisation of the implantation parameters and annealing conditions to minimise defect levels which would otherwise limit the ability of light to propagate in the Ti:Al 2O 3 waveguide. (authors)

Enhancement of electrical conductivity of ion-implanted polymer films

International Nuclear Information System (INIS)

Brock, S.

1985-01-01

The electrical conductivity of ion-implanted films of Nylon 66, Polypropylene (PP), Poly(tetrafluoroethylene) (Teflon) and mainly Poly (ethylene terephthalate) (PET) was determined by DC measurements at voltages up to 4500 V and compared with the corresponding values of pristine films. Measurements were made at 21 0 C +/- 1 0 C and 65 +/- 2% RH. The electrical conductivity of PET films implanted with F + , Ar + , or As + ions at energies of 50 keV increases by seven orders of magnitude as the fluence increases from 1 x 10 18 to 1 x 10 20 ions/m 2 . The conductivity of films implanted with As + was approximately one order greater than those implanted with Ar + , which in turn was approximately one-half order greater than those implanted with F + . The conductivity of the most conductive film ∼1 S/m) was almost 14 orders of magnitude greater than the pristine PET film. Except for the three PET samples implanted at fluences near 1 x 10 20 ions/m 2 with F + , Ar + , and As + ions, all implanted films were ohmic up to an electric field strength of 600 kV/m. The temperature dependence of the conductivity of the three PET films implanted near a fluence of 1 x 10 20 ions/m 2 was measured over the range of 80 K < T < 300 K

Modification of metallic corrosion by ion implantation

International Nuclear Information System (INIS)

Clayton, C.R.

1981-01-01

This review will consider some of the properties of surface alloys, formed by ion implantation, which are effective in modifying corrosion behaviour. Examples will be given of the modification of the corrosion behaviour of pure metals, steels and other engineering alloys, resulting from implantation with metals and metalloids. Emphasis will be given to the modification of anodic processes produced by ion implantation since a review will be given elsewhere in the proceedings concerning the modification of cathodic processes. (orig.)

TEM Characterization of Helium Bubbles in T91 and MNHS Steels Implanted with 200 keV He Ions at Different Temperatures

International Nuclear Information System (INIS)

Wang Ji; Gao Xing; Wang Zhi-Guang; Wei Kong-Fang; Yao Cun-Feng; Cui Ming-Huan; Sun Jian-Rong; Li Bing-Sheng; Pang Li-Long; Zhu Ya-Bin; Luo Peng; Chang Hai-Long; Zhang Hong-Peng; Zhu Hui-Ping; Wang Dong; Du Yang-Yang; Xie Er-Qing

2015-01-01

Modified novel high silicon steel (MNHS, a newly developed reduced-activation martensitic alloy) and commercial alloy T91 are implanted with 200 keV He"2"+ ions to a dose of 5 × 10"2"0 ions/m"2 at 300, 450 and 550°C. Transmission electron microscopy (TEM) is used to characterize the size and morphology of He bubbles. With the increase of the implantation temperature, TEM observations indicate that bubbles increase in size and the proportion of ‘brick shaped’ cuboid bubbles increases while the proportion of polyhedral bubbles decreases in both the steel samples. For the samples implanted at the same temperature, the average size of He bubbles in MNHS is smaller than that in T91. This might be due to the abundance of boundaries and precipitates in MNHS, which provide additional sites for the trapping of He atoms, thus reduce the susceptibility of MNHS to He embrittlement. (paper)

Ion implantation induced nanotopography on titanium and bone cell adhesion

Energy Technology Data Exchange (ETDEWEB)

Braceras, Iñigo, E-mail: inigo.braceras@tecnalia.com [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Vera, Carolina; Ayerdi-Izquierdo, Ana [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Muñoz, Roberto [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); Lorenzo, Jaione; Alvarez, Noelia [Tecnalia, Mikeletegi Pasealekua 2, 20009 Donostia-San Sebastian (Spain); CIBER de Bioingeniería, Biomateriales y Nanomedicina (Ciber-BBN) (Spain); Maeztu, Miguel Ángel de [Private Practice, P° San Francisco, 43 A-1°, 20400 Tolosa (Spain)

2014-08-15

Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm{sup 2}) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

Ion implantation induced nanotopography on titanium and bone cell adhesion

International Nuclear Information System (INIS)

Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; Maeztu, Miguel Ángel de

2014-01-01

Graphical abstract: Titanium surfaces modified by inert ion implantation affect cell adhesion through modification of the nanotopography in the same dimensional range of that of human bone inorganic phases. - Highlights: • Inert ion implantation on Ti modifies surface nanotopography and bone cell adhesion. • Ion implantation can produce nanostructured surfaces on titanium in the very same range as of those of the mineral phase of the human bone. • Appropriate tool for studying the relevance of nanostructured surfaces on bone mineralization and implant osseointegration. • Ion implantation induced nanotopography have a statistically significant influence on bone cell adhesion. - Abstract: Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40–80 keV), fluence (1–2 e17 ion/cm 2 ) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted

Evaluation of electron beam stabilization for ion implant processing

Science.gov (United States)

Buffat, Stephen J.; Kickel, Bee; Philipps, B.; Adams, J.; Ross, Matthew F.; Minter, Jason P.; Marlowe, Trey; Wong, Selmer S.

1999-06-01

With the integration of high energy ion implant processes into volume CMOS manufacturing, the need for thick resist stabilization to achieve a stable ion implant process is critical. With new photoresist characteristics, new implant end station characteristics arise. The resist outgassing needs to be addressed as well as the implant profile to ensure that the dosage is correct and the implant angle does not interfere with other underlying features. This study compares conventional deep-UV/thermal with electron beam stabilization. The electron beam system used in this study utilizes a flood electron source and is a non-thermal process. These stabilization techniques are applied to a MeV ion implant process in a CMOS production process flow.

Adhesive, abrasive and oxidative wear in ion-implanted metals

International Nuclear Information System (INIS)

Dearnaley, G.

1985-01-01

Ion implantation is increasingly being used to provide wear resistance in metals and cemented tungsten carbides. Field trials and laboratory tests indicate that the best performance is achieved in mild abrasive wear. This can be understood in terms of the classification of wear modes (adhesive, abrasive, oxidative etc.) introduced by Burwell. Surface hardening and work hardenability are the major properties to be enhanced by ion implantation. The implantation of nitrogen or dual implants of metallic and interstitial species are effective. Recently developed techniques of ion-beam-enhanced deposition of coatings can further improve wear resistance by lessening adhesion and oxidation. In order to support such hard coatings, ion implantation of nitrogen can be used as a preliminary treatment. There is thus emerging a versatile group of related hard vacuum treatments involving intense beams of nitrogen ions for the purpose of tailoring metal surfaces to resist wear. (Auth.)

Ion implantation in semiconductors and other materials

International Nuclear Information System (INIS)

Guernet, G.; Bruel, M.; Gailliard, J.P.; Garcia, M.; Robic, J.Y.

1977-01-01

The evolution of ion implantation techniques in the field of semiconductors and its extension to various fields such as metallurgy, mechanics, superconductivity and opto-electronics are considered. As for semiconductors ion implantation is evoked as: a means of predeposition of impurities at low doping level (10 11 to 10 14 cm -2 ); a means for obtaining profiles of controlled concentration; a means of reaching high doping levels with using 'strong current' implantation machines of the second generation. Some results obtained are presented [fr

Development of the ERC cold-cathode ion source for use on the PR-30 ion-implantation system

International Nuclear Information System (INIS)

Bird, H.M.B.; Flemming, J.P.

1978-01-01

The ERC cold-cathode ion source has been in routine production use on several PR-30 systems for the past three years. This source has been further developed to improve target current, lifetime, and stability. The ion-optical lens has been changed from circular to elliptical geometry in order to provide an asymmetric beam for entry into the PR-30 analyzing magnet. This measure, as well as the use of higher extraction voltages, provides higher beam currents on the PR-30 target wafers. Beam steering in the nondispersive direction has been provided to correct the effects of minor machine misalignments, further enhancing target current. The discharge chamber has been modified to increase source lifetime. A new gas-feed control system and a new method of oven temperature control have been devised to provide good source and ion beam stability. The source operates with only occasional attention by unskilled personnel, and has been used principally for boron and arsenic implants. Target currents of 1-mA boron and 4-mA arsenic can be obtained routinely. Lifetimes are of the order of 40--80 h, depending on ion species. The source has also been used to provide 5-mA phosphorus, 4-mA argon, 3-mA helium and neon, and 0.3-mA nickel and palladium ion beams

The GOES-16 Energetic Heavy Ion Instrument Proton and Helium Fluxes for Space Weather Applications

Science.gov (United States)

Connell, J. J.; Lopate, C.

2017-12-01

The Energetic Heavy Ion Sensor (EHIS) was built by the University of New Hampshire, subcontracted to Assurance Technology Corporation, as part of the Space Environmental In-Situ Suite (SEISS) on the new GOES-16 satellite, in geostationary Earth orbit. The EHIS measures energetic ions in space over the range 10-200 MeV for protons, and energy ranges for heavy ions corresponding to the same stopping range. Though an operational satellite instrument, EHIS will supply high quality data for scientific studies. For the GOES Level 1-B and Level 2 data products, protons and helium are distinguished in the EHIS using discriminator trigger logic. Measurements are provided in five energy bands. The instrumental cadence of these rates is 3 seconds. However, the primary Level 1-B proton and helium data products are 1-minute and 5-minute averages. The data latency is 1 minute, so data products can be used for real-time predictions as well as general science studies. Protons and helium, comprising approximately 99% of all energetic ions in space are of great importance for Space Weather predictions. We discuss the preliminary EHIS proton and helium data results and their application to Space Weather. The EHIS instrument development project was funded by NASA under contract NNG06HX01C.

Wear properties of metal ion implanted 4140 steel

International Nuclear Information System (INIS)

Evans, P.J.; Paoloni, F.J.

1994-01-01

AISI type 4140 (high tensile) steel has been implanted with tungsten and titanium using a metal vapour vacuum arc ion source. Doses in the range (1-5)x10 16 ionscm -2 were implanted to a depth of approximately 30nm. The relative wear resistance between non-implanted and implanted specimens has been estimated using pin-on-disc and abrasive wear tests. Implantation of titanium decreased the area of wear tracks by a factor of 5 over unimplanted steel. In some cases the steel was also hardened by a liquid carburization treatment before implantation. Abrasion tests revealed a further improvement in wear resistance on this material following ion irradiation. ((orig.))

Amorphous GaP produced by ion implantation

International Nuclear Information System (INIS)

Shimada, T.; Kato, Y.; Shiraki, Y.; Komatsubara, K.F.

1976-01-01

Two types of non-crystalline states ('disordered' and 'amorphous') of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the 'disordered' state to the 'amorphous' state was observed. The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV -N + ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity. The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose. The optical absorption coefficient α and electric conductivity sigma of GaP crystals implanted with 200 keV -N + ions of 1 x 10 16 cm -2 were expressed as αhν = C(hν - E 0 )sup(n) and log sigma = A -BTsup(-1/4), respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order or short range order ('disordered state'). In the sample implanted at 1 x 10 16 cm -2 , a structural phase-transition-like annealing stage was observed at around 400 0 C. That is, the optical absorption coefficient abruptly fell off from 6 x 10 4 to 7 x 10 3 cm -1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing. These facts suggest that heavily implanted GaP, followed by annealing at around 400 0 C, is in the 'amorphous' state, although as-implanted GaP is not in the 'amorphous' state but in the

Progress in ion implantation equipment for semiconductor manufacturing

International Nuclear Information System (INIS)

Kawai, Tadashi; Naito, Masao

1987-01-01

In the semiconductor device manufacturing industry, ion implantation systems are used to dope semiconductor substrates with impurities that act as donor or acceptor. In an ion implantation system, required impurity ions are generated from an ion source, subjected to mass analysis, accelerated, converged and implanted in semiconductor wafers. High-tension arc tends to cause troubles in these systems, but improvement in design increased the average operation rate of medium-power systems from bout 70 percent to 90 percent during the past 10 years. Freeman type ion sources have replaced most RF ion sources and cold cathode PIG sources, which had been widely used until the early 1970s. Many of the recent ion sources are equipped with a P and As vaporizer to increase the beam intensity. By an increased beam intensity or decreased handling time in combination with an automatic handling system, the throughput has reached 330 wafers per hour for 10 second implantation. The yield has increased due to the development of improved scanning methods, vacuum devices such as cryopump, and processes and apparatus that serve for preventing particles from being contained in micro-devices. Various other improvements have been made to permit efficient production. (Nogami, K.)

Implementation of spot scanning dose optimization and dose calculation for helium ions in Hyperion

DEFF Research Database (Denmark)

Fuchs, Hermann; Alber, Markus; Schreiner, Thomas

2015-01-01

PURPOSE: Helium ions ((4)He) may supplement current particle beam therapy strategies as they possess advantages in physical dose distribution over protons. To assess potential clinical advantages, a dose calculation module accounting for relative biological effectiveness (RBE) was developed...... published so far. The advantage of (4)He seems to lie in the reduction of dose to surrounding tissue and to OARs. Nevertheless, additional biological experiments and treatment planning studies with larger patient numbers and more tumor indications are necessary to study the possible benefits of helium ion...

Direct nano-patterning of graphene with helium ion beams

International Nuclear Information System (INIS)

Naitou, Y.; Iijima, T.; Ogawa, S.

2015-01-01

Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO 2 /Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He + ). Doses of 2.0 × 10 16  He +  cm −2 from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He + in a non-monotonic fashion. Increasing the dose from 2.0 × 10 16 to 5.0 × 10 16  He +  cm −2 improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 10 17  He +  cm −2 degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices

Ion implantation induced martensite nucleation in SUS301 steel

International Nuclear Information System (INIS)

Kinoshita, Hiroshi; Takahashi, Heishichiro; Gustiono, Dwi; Sakaguchi, Norihito; Shibayama, Tamaki; Watanabe, Seiichi

2007-01-01

Phase transformation behaviors of the austenitic 301 stainless steel was studied under Fe + , Ti + and Ar + ions implantation at room temperature with 100, 200 and 300 keV up to fluence of 1x10 21 ions/m 2 and the microstructures were observed by means of transmission electron microscopy (TEM). The plane and cross-sectional observations of the implanted specimen showed that the induced-phases due to implantation from the γ matrix phase were identified as α' martensite phases with the orientation relationship of (11-bar0) α parallel (111-bar) γ and [111] α parallel [011] γ close to the Kurdjumov-Sachs (K-S). The ion implantation induced phases nucleated near the surface region and the depth position of the nucleation changed depending on the ion accelerating energy and ion species. It was also found that the induced marten sites phases nucleate under the influence of the stress distribution, which is introduced due to the concentration of implanted ions, especially due to the stress gradient caused by the corresponding concentration gradient. (author)

Procedure for the ion implantation of MOS elements

International Nuclear Information System (INIS)

Gessner, T.; Vetter, E.; Tolonics, J.

1986-01-01

The ion implantation procedure is applied to the doping of MOS elements. The invention guarantees a homogeneous doping in the dose range from 10 10 to 10 12 ions/cm 2 without additional installations of mechanical orifices in high-current implantation devices. The ion source parameters like cathode heating current, pressure at the ion source, extraction and acceleration voltages correspond to the dose range (10 10 to 10 12 ions/cm 2 ) for single charged ions of the doping agent. Double or triple charged ions generated at the ion source have been separated mass-analytically, accelerated and scanned. Ion densities below 100 nA/cm 2 have been obtained

N and Cr ion implantation of natural ruby surfaces and their characterization

Energy Technology Data Exchange (ETDEWEB)

Rao, K. Sudheendra; Sahoo, Rakesh K.; Dash, Tapan [CSIR-Institute of Minerals and Materials Technology, Bhubaneswar 751013 (India); Magudapathy, P.; Panigrahi, B.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Nayak, B.B.; Mishra, B.K. [CSIR-Institute of Minerals and Materials Technology, Bhubaneswar 751013 (India)

2016-04-15

Highlights: • Cr and N ion implantation on natural rubies of low aesthetic quality. • Cr-ion implantation improves colour tone from red to deep red (pigeon eye red). • N-ion implantation at fluence of 3 × 10{sup 17} causes blue coloration on surface. • Certain extent of amorphization is observed in the case of N-ion implantation. - Abstract: Energetic ions of N and Cr were used to implant the surfaces of natural rubies (low aesthetic quality). Surface colours of the specimens were found to change after ion implantation. The samples without and with ion implantation were characterized by diffuse reflectance spectra in ultra violet and visible region (DRS-UV–Vis), field emission scanning electron microscopy (FESEM), selected area electron diffraction (SAED) and nano-indentation. While the Cr-ion implantation produced deep red surface colour (pigeon eye red) in polished raw sample (without heat treatment), the N-ion implantation produced a mixed tone of dark blue, greenish blue and violet surface colour in the heat treated sample. In the case of heat treated sample at 3 × 10{sup 17} N-ions/cm{sup 2} fluence, formation of colour centres (F{sup +}, F{sub 2}, F{sub 2}{sup +} and F{sub 2}{sup 2+}) by ion implantation process is attributed to explain the development of the modified surface colours. Certain degree of surface amorphization was observed to be associated with the above N-ion implantation.

Helium ion distributions in a 4 kJ plasma focus device by 1 mm-thick large-size polycarbonate detectors

Science.gov (United States)

Sohrabi, M.; Habibi, M.; Ramezani, V.

2014-11-01

Helium ion beam profile, angular and iso-ion beam distributions in 4 kJ Amirkabir plasma focus (APF) device were effectively observed by the unaided eyes and studied in single 1 mm-thick large-diameter (20 cm) polycarbonate track detectors (PCTD). The PCTDs were processed by 50 Hz-HV electrochemical etching using a large-size ECE chamber. The results show that helium ions produced in the APF device have a ring-shaped angular distribution peaked at an angle of ∼ ± 60 ° with respect to the top of the anode. Some information on the helium ion energy and distributions is also provided. The method is highly effective for ion beam studies.

Amorphization and recrystallization in MeV ion implanted InP crystals

International Nuclear Information System (INIS)

Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

1988-01-01

A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

Thermal desorption of deuterium from Be, and Be with helium bubbles

Energy Technology Data Exchange (ETDEWEB)

Fedorov, A.V.; Van Veen, A.; Busker, G.J. [Delft Univ. of Technology (Netherlands). Interfaculty Reactor Inst.

1998-01-01

Deuterium desorption measurements carried out on a single-crystalline beryllium sample are presented. Deuterium ions were implanted at room temperature at the energy of 0.7 and 1.2 keV up to doses ranging from 10{sup 19} to 3.6 x 10{sup 21} m{sup -2}. In order to eliminate the influence of the beryllium-oxide surface layer, before the implantation the surface of the sample was cleaned by argon sputtering. After the implantation the sample was annealed up to 1200 K at a constant rate of 10 K/s. Deuterium released from the sample was monitored by a calibrated quadrupole mass-spectrometer. The desorption spectra revealed two different contributions. One is a well defined and very narrow peak centered around 450 K. This peak is observed only at high implantation doses > 7.8 x 10{sup 20} m{sup -2}, which is close to the deuterium saturation limit of 0.3 D/Be and is related to deuterium release from blisters or interconnected bubbles. The activation energy of 1.1 eV and the threshold implantation dose are consistent with the values reported in literature. The second contribution in the release spectra is found in the temperature range from 600 to 900 K and is present throughout the whole range of the implantation doses. The activation energies corresponding to this release lie in the range between 1.8 and 2.5 eV and are ascribed to the release from deuterium-vacancy type of defects. In a number of experiments the deuterium implantation was preceded by helium implantation followed by partial annealing to create helium bubbles. The resulting deuterium desorption spectra indicate that deuterium detrapping from helium bubbles is characterized by an activation energy of 2.7 eV. (author)

Ion beam stabilization in ion implantation equipment

International Nuclear Information System (INIS)

Pina, L.

1973-01-01

The results are presented of experimental efforts aimed at ion beam current stabilization in an equipment for ion implantation in solids. The related problems of power supplies are discussed. Measured characteristics of laboratory equipment served the determination of the parameters to be required of the supplies as well as the design and the construction of the supplies. The respective wiring diagram is presented. (J.K.)

Effect of Fe and C doping on the thermal release of helium from aluminum

International Nuclear Information System (INIS)

Xiang, X.; Chen, C.A.; Liu, K.Z.; Peng, L.X.; Rao, Y.C.

2010-01-01

The effect of Fe and C doping on the thermal release of helium from Al implanted with 10 keV, 4.0 x 10 21 ion/m 2 He at room temperature (RT) has been investigated by thermal helium desorption spectrometry (THDS) and transmission electron microscope (TEM). The results show that Fe and C doping have significant impact on the release of helium from Al and the extent depends on the doping fluence. Proper fluence of Fe and C doping would lead to the retardation of the release of helium from Al, while excessive fluence of Fe and C doping would result in more desorption peaks and the release of helium in lower temperature ranges. Fe and C doping have different influence on the release of helium from Al, and the difference is related with the secondary phases forming in the samples.

Compressive flow behavior of Cu thin films and Cu/Nb multilayers containing nanometer-scale helium bubbles

International Nuclear Information System (INIS)

Li, N.; Mara, N.A.; Wang, Y.Q.; Nastasi, M.; Misra, A.

2011-01-01

Research highlights: → Firstly micro-pillar compression technique has been used to measure the implanted metal films. → The magnitude of radiation hardening decreased with decreasing layer thickness. → When thickness decreases to 2.5 nm, no hardening and no loss in deformability after implantation. -- Focused-ion-beam machined compression specimens were used to investigate the effect of nanometer-scale helium bubbles on the strength and deformability of sputter-deposited Cu and Cu/Nb multilayers with different layer thickness. The flow strength of Cu films increased by more than a factor of 2 due to helium bubbles but in multilayers, the magnitude of radiation hardening decreased with decreasing layer thickness. When the layer thickness decreases to 2.5 nm, insignificant hardening and no measurable loss in deformability is observed after implantation.

The multiple ionization of helium induced by partially stripped carbon ions

International Nuclear Information System (INIS)

Cai Xiaohong; Chen Ximeng; Shen Ziyong

1996-01-01

The ratios of the double to single ionization cross sections of helium impacted by partially stripped C q+ ions (q = 1,2,3,4) in energy range of 1.5-7.5 MeV were measured by using the time of flight procedure. The n-body classical trajectory Monte Carlo calculation was carried out to get the Olson-Schlachter scaling. The single and double ionization cross sections of helium were obtained by comparing the cross section ratios of the present work with the Olson-Schlachter scaling

Wear properties of metal ion implanted 4140 steel

Energy Technology Data Exchange (ETDEWEB)

Evans, P.J. (Applications of Nuclear Physics, Ansto, Private Mail Bag 1, Menai, NSW 2234 (Australia)); Paoloni, F.J. (Department of Electrical and Computer Engineering, University of Wollongong, GPO Box 1144, Wollongong, NSW 2500 (Australia))

1994-07-01

AISI type 4140 (high tensile) steel has been implanted with tungsten and titanium using a metal vapour vacuum arc ion source. Doses in the range (1-5)x10[sup 16]ionscm[sup -2] were implanted to a depth of approximately 30nm. The relative wear resistance between non-implanted and implanted specimens has been estimated using pin-on-disc and abrasive wear tests. Implantation of titanium decreased the area of wear tracks by a factor of 5 over unimplanted steel. In some cases the steel was also hardened by a liquid carburization treatment before implantation. Abrasion tests revealed a further improvement in wear resistance on this material following ion irradiation. ((orig.))

Industrial applications of ion implantation into metal surfaces

International Nuclear Information System (INIS)

Williams, J.M.

1987-07-01

The modern materials processing technique, ion implantation, has intriguing and attractive features that stimulate the imaginations of scientists and technologists. Success of the technique for introducing dopants into semiconductors has resulted in a stable and growing infrastructure of capital equipment and skills for use of the technique in the economy. Attention has turned to possible use of ion implantation for modification of nearly all surface related properties of materials - optical, chemical and corrosive, tribological, and several others. This presentation provides an introduction to fundamental aspects of equipment, technique, and materials science of ion implantation. Practical and economic factors pertaining to the technology are discussed. Applications and potential applications are surveyed. There are already available a number of ion-implanted products, including ball-and-roller bearings and races, punches-and-dies, injection screws for plastics molding, etc., of potential interest to the machine tool industry

The role of helium ion microscopy in the characterisation of complex three-dimensional nanostructures

International Nuclear Information System (INIS)

Rodenburg, C.; Liu, X.; Jepson, M.A.E.; Zhou, Z.; Rainforth, W.M.; Rodenburg, J.M.

2010-01-01

This work addresses two major issues relating to Helium Ion Microscopy (HeIM). First we show that HeIM is capable of solving the interpretation difficulties that arise when complex three-dimensional structures are imaged using traditional high lateral resolution techniques which are transmission based, such as scanning transmission electron microscopy (STEM). Secondly we use a nano-composite coating consisting of amorphous carbon embedded in chromium rich matrix to estimate the mean escape depth for amorphous carbon for secondary electrons generated by helium ion impact as a measure of HeIM depth resolution.

Channeled-ion implantation of group-III and group-V ions into silicon

International Nuclear Information System (INIS)

Furuya, T.; Nishi, H.; Inada, T.; Sakurai, T.

1978-01-01

Implantation of group-III and group-V ions along [111] and [110] axes of silicon have been performed using a backscattering technique, and the depth profiles of implanted ions have been measured by the C-V method. The range of channeled Ga ions is the largest among the present data, and a p-type layer of about 6 μm is obtained by implantation at only 150 keV. The carrier profiles of channeled Al and Ga ions with deep ranges do not show any distinguishable channeled peak contrasting with the B, P, and As channeling which gives a well-defined peak. The electronic stopping cross section (S/sub e/) of channeled P ions agree well with the results of Eisen and Reddi, but in B channeling, the discrepancies of 10--20% are observed among S/sub e/ values obtained experimentally by three different groups

Fe doped Magnetic Nanodiamonds made by Ion Implantation.

Science.gov (United States)

Chen, ChienHsu; Cho, I C; Jian, Hui-Shan; Niu, H

2017-02-09

Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

Fe doped Magnetic Nanodiamonds made by Ion Implantation

Science.gov (United States)

Chen, Chienhsu; Cho, I. C.; Jian, Hui-Shan; Niu, H.

2017-02-01

Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

TEM study of amorphous alloys produced by ion implantation

International Nuclear Information System (INIS)

Johnson, E.; Grant, W.A.; Wohlenberg, P.; Hansen, P.; Chadderton, L.T.

1978-01-01

Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam, penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams. This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy + and P + ions at doses between 10 13 - 10 17 ions/cm 2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens. Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel. (Auth.)

Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2015-12-15

A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A pencil beam algorithm for helium ion beam therapy

Energy Technology Data Exchange (ETDEWEB)

Fuchs, Hermann; Stroebele, Julia; Schreiner, Thomas; Hirtl, Albert; Georg, Dietmar [Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria); PEG MedAustron, 2700 Wiener Neustadt (Austria); Department of Nuclear Medicine, Medical University of Vienna, 1090 Vienna (Austria); Christian Doppler Laboratory for Medical Radiation Research for Radiation Oncology, Medical University of Vienna, 1090 Vienna (Austria); Department of Radiation Oncology, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria) and Comprehensive Cancer Center, Medical University of Vienna/AKH Vienna, 1090 Vienna (Austria)

2012-11-15

Purpose: To develop a flexible pencil beam algorithm for helium ion beam therapy. Dose distributions were calculated using the newly developed pencil beam algorithm and validated using Monte Carlo (MC) methods. Methods: The algorithm was based on the established theory of fluence weighted elemental pencil beam (PB) kernels. Using a new real-time splitting approach, a minimization routine selects the optimal shape for each sub-beam. Dose depositions along the beam path were determined using a look-up table (LUT). Data for LUT generation were derived from MC simulations in water using GATE 6.1. For materials other than water, dose depositions were calculated by the algorithm using water-equivalent depth scaling. Lateral beam spreading caused by multiple scattering has been accounted for by implementing a non-local scattering formula developed by Gottschalk. A new nuclear correction was modelled using a Voigt function and implemented by a LUT approach. Validation simulations have been performed using a phantom filled with homogeneous materials or heterogeneous slabs of up to 3 cm. The beams were incident perpendicular to the phantoms surface with initial particle energies ranging from 50 to 250 MeV/A with a total number of 10{sup 7} ions per beam. For comparison a special evaluation software was developed calculating the gamma indices for dose distributions. Results: In homogeneous phantoms, maximum range deviations between PB and MC of less than 1.1% and differences in the width of the distal energy falloff of the Bragg-Peak from 80% to 20% of less than 0.1 mm were found. Heterogeneous phantoms using layered slabs satisfied a {gamma}-index criterion of 2%/2mm of the local value except for some single voxels. For more complex phantoms using laterally arranged bone-air slabs, the {gamma}-index criterion was exceeded in some areas giving a maximum {gamma}-index of 1.75 and 4.9% of the voxels showed {gamma}-index values larger than one. The calculation precision of the

Challenges of fabricating plasmonic and photonic structures with Neon ion beam milling

DEFF Research Database (Denmark)

Leißner, Till; Fiutowski, Jacek; Bozhevolnyi, Sergey I.

-established electron beam lithography and focussed ion beam milling (FIB) using Gallium ions. These techniques, however, are to some extend limited in their resolution, and in addition Gallium and Carbon are implanted and deposited into the plasmonic structures during FIB process, potentially changing plasmonic...... properties. We are currently studying the capabilities of focussed Helium and Neon ion beam milling for the fabricating of plasmonic and photonic devices. We found that Neon ion beam milling enables us to prepare plasmonic structures, such as trenches (see Fig. 1) and V-grooves without doping and alloying...... effects specific to Galium FIB. Neon FIB milling is superior to Helium FIB milling in terms of the processing speed and smaller levels of implanted ions. From our perspective it is the most promising technique for the fabrication of individual plasmonic devices with a few nanometers precision. The main...

Implantation of 111In in NTDSi by heavy ion recoil technique

International Nuclear Information System (INIS)

Thakare, S.V.; Tomar, B.S.

1998-01-01

Heavy ion recoil implantation technique has been used to implant 111 In in n-type silicon using medium energy heavy ion accelerator Pelletron, at TIFR, Colaba, Mumbai. The nuclear reaction used for this purpose was 109 Ag( 7 Li,p4n) 111 In. The beam energy was optimised to be 50 MeV for maximum concentration of the implanted probe atoms. The gamma-ray spectrum of the implanted sample after 24 hours was found to contain only 171 and 245 keV gamma rays of 111 In. The penetration depth of ion is increased to 1.6 μm by heavy ion recoil implantation technique as compared to 0.16 μm with the conventional ion implantation technique. (author)

Studies of ion implanted thermally oxidised chromium

International Nuclear Information System (INIS)

Muhl, S.

1977-01-01

The thermal oxidation of 99.99% pure chromium containing precise amounts of foreign elements has been studied and compared to the oxidation of pure chromium. Thirty-three foreign elements including all of the naturally occurring rare earth metals were ion implanted into chromium samples prior to oxidation at 750 0 C in oxygen. The role of radiation induced damage, inherent in this doping technique, has been studied by chromium implantations at various energies and doses. The repair of the damage has been studied by vacuum annealing at temperatures up to 800 0 C prior to oxidation. Many of the implants caused an inhibition of oxidation, the greatest being a 93% reduction for 2 x 10 16 ions/cm 2 of praseodymium. The distribution of the implant was investigated by the use of 2 MeV alpha backscattering and ion microprobe analysis. Differences in the topography and structure of the chromic oxide on and off the implanted area were studied using scanning electron and optical microscopy. X-ray diffraction analysis was used to investigate if a rare earth-chromium compound of a perovskite-type structure had been formed. Lastly, the electrical conductivity of chromic oxide on and off the implanted region was examined at low voltages. (author)

Cytological effect of nitrogen ion implantation into Stevia

International Nuclear Information System (INIS)

Shen Mei; Wang Cailian; Chen Qiufang; Lu Ting; Shu Shizhen

1997-01-01

Dry seeds of Stevia were implanted by 35∼150 keV nitrogen ion with various doses. The cytological effect on M 1 was studied. The results showed that nitrogen ion beam was able to induce variation on chromosome structure in root tip cells. The rate of cells with chromosome aberration was increased with the increased with the increase of ion beam energy and dose. However, there was no significant linear regression relationship between ion dose and aberration rate. The cytological effect of nitrogen ion implantation was lower than that of γ-rays

Effects of dual-ion irradiation on the swelling of SiC/SiC composites

International Nuclear Information System (INIS)

Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

2005-01-01

Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

Pure high dose metal ion implantation using the plasma immersion technique

International Nuclear Information System (INIS)

Zhang, T.; Tang, B.Y.; Zeng, Z.M.; Kwok, T.K.; Chu, P.K.; Monteiro, O.R.; Brown, I.G.

1999-01-01

High energy implantation of metal ions can be carried out using conventional ion implantation with a mass-selected ion beam in scanned-spot mode by employing a broad-beam approach such as with a vacuum arc ion source, or by utilizing plasma immersion ion implantation with a metal plasma. For many high dose applications, the use of plasma immersion techniques offers a high-rate process, but the formation of a surface film along with the subsurface implanted layer is sometimes a severe or even fatal detriment. We describe here an operating mode of the metal plasma immersion approach by which pure implantation can be obtained. We have demonstrated the technique by carrying out Ti and Ta implantations at energies of about 80 and 120 keV for Ti and Ta, respectively, and doses on the order of 1x10 17 ions/cm 2 . Our experiments show that virtually pure implantation without simultaneous surface deposition can be accomplished. Using proper synchronization of the metal arc and sample voltage pulse, the applied dose that deposits as a film versus the part that is energetically implanted (the deposition-to-implantation ratio) can be precisely controlled.copyright 1999 American Institute of Physics

Defects in TiN and HfN studied by helium thermal desorption spectrometry

International Nuclear Information System (INIS)

Hoondert, W.H.B.; Thijsse, B.J.; Beuckel, A. van den

1994-01-01

Point defects in sub-stoichiometric TiN 1-x and HfN 1-x were investigated by helium thermal desorption spectrometry (300-1800K) following He + ion implantation at energies up to 3000eV. It was found that the low energy spectra are dominated by helium dissociating from the structural vacancies on the nitrogen sublattice; the activation energy for dissociation is 2.2eV for TiN. Above a few hundred electron volts the ions begin to produce several other types of defects, from which helium dissociates with activation energies in the range 2.6-4.0eV. The identity of these defects is discussed. The results for the two nitrides were similar in many respects. The most significant difference observed is that in TiN low energy He + ions generate damage on the N sublattice of a type that is not observed for HfN. Activation energies for HfN are found to be consistently 0.7eV lower than for TiN. ((orig.))

SIMS analysis of isotopic impurities in ion implants

International Nuclear Information System (INIS)

Sykes, D.E.; Blunt, R.T.

1986-01-01

The n-type dopant species Si and Se used for ion implantation in GaAs are multi-isotopic with the most abundant isotope not chosen because of potential interferences with residual gases. SIMS analysis of a range of 29 Si implants produced by several designs of ion implanter all showed significant 28 Si impurity with a different depth distribution from that of the deliberately implanted 29 Si isotope. This effect was observed to varying degrees with all fifteen implanters examined and in every 29 Si implant analysed to date 29 Si + , 29 Si ++ and 30 Si implants all show the same effect. In the case of Se implantation, poor mass resolution results in the implantation of all isotopes with the same implant distribution (i.e. energy), whilst implants carried out with good mass resolution show the implantation of all isotopes with the characteristic lower depth distribution of the impurity isotopes as found in the Si implants. This effect has also been observed in p-type implants into GaAs (Mg) and for Ga implanted in Si. A tentative explanation of the effect is proposed. (author)

Reflectance spectroscopy of PMMA implanted with 50 keV silicon ions

Energy Technology Data Exchange (ETDEWEB)

Florian, Bojana [Bulgarian Institute of Metrology, 2 Prof. P. Mutafchiev Str., 1797 Sofia (Bulgaria); Stefanov, Ivan [Department of Quantum Electronics, Faculty of Physics, Sofia University, 5 James Bourchier Blvd., 1164 Sofia (Bulgaria); Hadjichristov, Georgi [Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria)

2009-07-01

Recently, the modification of the specular reflectivity of PMMA implanted with low-energy (50 keV) silicon ions was studied and nano-clusters formed in PMMA by Si{sup +} implantation were evidenced by Raman spectroscopy and electrical measurements. Further, the optical loss due to off-specular (diffuse) reflectivity of this ion-implanted polymer is also of practical interest for applications such as micro-optical lenses, diffraction gratings, Fresnel lenses, waveguides, etc. We examined both specular and diffuse reflectivity of Si{sup +} implanted PMMA in the UV-Vis-NIR. The effect from Si{sup +} implantation in the dose range 10{sup 14}-10{sup 17} ions/cm{sup 2} is linked to the structure formed in PMMA where the buried ion-implanted layer has a thickness up to 100 nm. As compared to the pristine PMMA, an enhancement of the reflectivity of Si{sup +} implanted PMMA is observed, that is attributed to the modification of the subsurface region of PMMA upon the ion implantation.

Study of damage and helium diffusion in fluoro-apatites

International Nuclear Information System (INIS)

Miro, S.

2004-12-01

This work lies within the scope of the study of the radionuclides containment matrices. The choice of the fluoro-apatites as potential matrices of containment was suggested by the notable properties of these latter (thermal and chemical stability even under radioactive radiation). By irradiations with heavy ions and a helium implantation we simulated the effects related to the alpha radioactivity and to the spontaneous nuclear fission of the radionuclides. Thanks to the study of Durango fluoro-apatite single crystals and fluoro-apatite sintered ceramics, we evidenced that the damage fraction as well as the unit cell deformations increase with the electronic energy loss and with the substitution. These effects are followed at high fluences by a phenomenon of re-crystallization. The study of the helium diffusion points out that the thermal diffusion process improves with the substitution and strongly increases with heavy ions irradiation. (author)

The detection of He in tungsten following ion implantation by laser-induced breakdown spectroscopy

Science.gov (United States)

Shaw, G.; Bannister, M.; Biewer, T. M.; Martin, M. Z.; Meyer, F.; Wirth, B. D.

2018-01-01

Laser-induced breakdown spectroscopy (LIBS) results are presented that provide depth-resolved identification of He implanted in polycrystalline tungsten (PC-W) targets by a 200 keV He+ ion beam, with a surface temperature of approximately 900 °C and a peak fluence of 1023 m-2. He retention, and the influence of He on deuterium and tritium recycling, permeation, and retention in PC-W plasma facing components are important questions for the divertor and plasma facing components in a fusion reactor, yet are difficult to quantify. The purpose of this work is to demonstrate the ability of LIBS to identify helium in tungsten; to investigate the sensitivity of laser parameters including, laser energy and gate delay, that directly influence the sensitivity and depth resolution of LIBS; and to perform a proof-of-principle experiment using LIBS to measure relative He intensities as a function of depth. The results presented demonstrate the potential not only to identify helium but also to develop a methodology to quantify gaseous impurity concentration in PC-W as a function of depth.

Ion implantation induced blistering of rutile single crystals

Energy Technology Data Exchange (ETDEWEB)

Xiang, Bing-Xi [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Jiao, Yang [College of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250100 (China); Guan, Jing [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Wang, Lei [School of Physics, Shandong University, Jinan, Shandong 250100 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China)

2015-07-01

The rutile single crystals were implanted by 200 keV He{sup +} ions with a series fluence and annealed at different temperatures to investigate the blistering behavior. The Rutherford backscattering spectrometry, optical microscope and X-ray diffraction were employed to characterize the implantation induced lattice damage and blistering. It was found that the blistering on rutile surface region can be realized by He{sup +} ion implantation with appropriate fluence and the following thermal annealing.

Surface modification of yttria stabilized zirconia by ion implantation

International Nuclear Information System (INIS)

Scholten, D.

1987-01-01

The results of investigations of surface modification by ion implantation in zirconia are described. As dopant material, iron was investigated thoroughly. The depth distribution of implanted ions depends on implantation parameters and the dopant-matrix system. The investigations of thermal stability of some implanted iron profiles by RBS and AES are described. Special interest lies in the thermal stability under working conditions of the zirconia material (400-1000 0 C). Radiation damage introduced in the implanted layer was investigated using transmission electron microscopy on polycrystalline material and channeling experiments on a single crystal implanted with iron. 179 refs.; 87 figs.; 20 tabs

Graphitic structure formation in ion implanted polyetheretherketone

Energy Technology Data Exchange (ETDEWEB)

Tavenner, E., E-mail: tazman1492@gmail.com [Creative Polymers Pty. Ltd., 41 Wilkinson Street, Toowoomba, Queensland 4350 (Australia); Chemical Committee, Surface Chemical Analysis, Standards (Australia); Wood, B. [Centre for Microscopy and Microanalysis, University of Queensland, St. Lucia, Queensland 4072 (Australia); Chemical Committee, Surface Chemical Analysis, Standards (Australia); Curry, M.; Jankovic, A.; Patel, R. [Center for Applied Science and Engineering, Missouri State University, 524 North Boonville Avenue, Springfield, MO 65806 (United States)

2013-10-15

Ion implantation is a technique that is used to change the electrical, optical, hardness and biocompatibility of a wide range of inorganic materials. This technique also imparts similar changes to organic or polymer based materials. With polymers, ion implantation can produce a carbon enriched volume. Knowledge as to the nature of this enrichment and its relative concentration is necessary to produce accurate models of the physical properties of the modified material. One technique that can achieve this is X-ray photoelectron spectroscopy. In this study the formation of graphite like structures in the near surface of polyetheretherketone by ion implantation has been elucidated from detailed analysis of the C 1s and valence band peak structures generated by X-ray photoelectron spectroscopy. Further evidence is given by both Rutherford backscatter spectroscopy and elastic recoil detection.

Annealing of ion implanted silicon

International Nuclear Information System (INIS)

Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

1980-09-01

The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

Study of helium behaviour in body-centered cubic structures for new nuclear reactor generations: experimental approach in well characterized materials

International Nuclear Information System (INIS)

Gorondy-Novak, Sofia Maria

2017-01-01

The presence of helium produced during the operation of future fast reactors and fusion reactors in core structural materials induces a deterioration of their mechanical properties (hardening, swelling, embrittlement). In order to pursue the development of the metallic structural alloys, it is necessary to comprehend the He interaction with the metal lattice thus the point in common is the study of the metallic components with body-centered cubic structure (bcc) of future alloys, such as iron and/or vanadium. Ion implantation of ions "4He was employed with the aim of simulating the damaging effects associated with the helium accumulation, the point defects' creation (vacancies, self-interstitials) and the He cluster formation in future reactors. Helium evolution in pure iron and pure vanadium has been revealed from the point of view of the trapping sites' nature and well as the helium migration mechanisms and the nucleation/growth of bubbles. These phenomena were studied by coupling different complementary techniques. Despite of the fact that some mechanisms involved seem to be similar for both bcc metals, the comparison between the helium behavior in iron and vanadium shows certain differences. Microstructural defects, including grain boundaries and implanted helium concentration (dose) in both bcc metals will play significant roles on the helium behavior at high temperature. The acquired experimental data coupled with simulation methods contribute to the future development in terms of kinetic and thermodynamic data management of helium behavior in the metal components of the alloys of nuclear interest. (author) [fr

Helium in inert matrix dispersion fuels

International Nuclear Information System (INIS)

Veen, A. van; Konings, R.J.M.; Fedorov, A.V.

2003-01-01

The behaviour of helium, an important decay product in the transmutation chains of actinides, in dispersion-type inert matrix fuels is discussed. A phenomenological description of its accumulation and release in CERCER and CERMET fuel is given. A summary of recent He-implantation studies with inert matrix metal oxides (ZrO 2 , MgAl 2 O 4 , MgO and Al 2 O 3 ) is presented. A general picture is that for high helium concentrations helium and vacancy defects form helium clusters which convert into over-pressurized bubbles. At elevated temperature helium is released from the bubbles. On some occasions thermal stable nano-cavities or nano-pores remain. On the basis of these results the consequences for helium induced swelling and helium storage in oxide matrices kept at 800-1000 deg. C will be discussed. In addition, results of He-implantation studies for metal matrices (W, Mo, Nb and V alloys) will be presented. Introduction of helium in metals at elevated temperatures leads to clustering of helium to bubbles. When operational temperatures are higher than 0.5 melting temperature, swelling and helium embrittlement might occur

A simple ion implanter for material modifications in agriculture and gemmology

Science.gov (United States)

Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M. W.; Suwankosum, R.; Rattanarin, S.; Yu, L. D.

2015-12-01

In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X-Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

A simple ion implanter for material modifications in agriculture and gemmology

International Nuclear Information System (INIS)

Singkarat, S.; Wijaikhum, A.; Suwannakachorn, D.; Tippawan, U.; Intarasiri, S.; Bootkul, D.; Phanchaisri, B.; Techarung, J.; Rhodes, M.W.; Suwankosum, R.; Rattanarin, S.; Yu, L.D.

2015-01-01

In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X–Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

A simple ion implanter for material modifications in agriculture and gemmology

Energy Technology Data Exchange (ETDEWEB)

Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom); Suwannakachorn, D.; Tippawan, U. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Intarasiri, S. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Phanchaisri, B.; Techarung, J. [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Rhodes, M.W.; Suwankosum, R.; Rattanarin, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2015-12-15

In our efforts in developing ion beam technology for novel applications in biology and gemmology, an economic simple compact ion implanter especially for the purpose was constructed. The designing of the machine was aimed at providing our users with a simple, economic, user friendly, convenient and easily operateable ion implanter for ion implantation of biological living materials and gemstones for biotechnological applications and modification of gemstones, which would eventually contribute to the national agriculture, biomedicine and gem-industry developments. The machine was in a vertical setup so that the samples could be placed horizontally and even without fixing; in a non-mass-analyzing ion implanter style using mixed molecular and atomic nitrogen (N) ions so that material modifications could be more effective; equipped with a focusing/defocusing lens and an X–Y beam scanner so that a broad beam could be possible; and also equipped with a relatively small target chamber so that living biological samples could survive from the vacuum period during ion implantation. To save equipment materials and costs, most of the components of the machine were taken from decommissioned ion beam facilities. The maximum accelerating voltage of the accelerator was 100 kV, ideally necessary for crop mutation induction and gem modification by ion beams from our experience. N-ion implantation of local rice seeds and cut gemstones was carried out. Various phenotype changes of grown rice from the ion-implanted seeds and improvements in gemmological quality of the ion-bombarded gemstones were observed. The success in development of such a low-cost and simple-structured ion implanter provides developing countries with a model of utilizing our limited resources to develop novel accelerator-based technologies and applications.

Direct nano-patterning of graphene with helium ion beams

Energy Technology Data Exchange (ETDEWEB)

Naitou, Y., E-mail: yu-naitou@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan); Iijima, T.; Ogawa, S. [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2015-01-19

Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO{sub 2}/Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He{sup +}). Doses of 2.0 × 10{sup 16 }He{sup + }cm{sup −2} from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He{sup +} in a non-monotonic fashion. Increasing the dose from 2.0 × 10{sup 16} to 5.0 × 10{sup 16 }He{sup + }cm{sup −2} improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 10{sup 17 }He{sup + }cm{sup −2} degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices.

Paramagnetism in ion-implanted oxides

CERN Document Server

Mølholt, Torben Esmann; Gíslason, Hafliði Pétur; Ólafsson, Sveinn

This thesis describes the investigation on para-magnetism in dilute ion-implanted single-crystal oxide samples studied by on- and off-line $^{57}$Fe emission Mössbauer spectroscopy. The ion-implantation of the radioactive isotopes ( $^{57}$Mn and $^{57}$Co) was performed at the ISOLDE facility at CERN in Geneva, Switzerland. The off-line measurements were performed at Aarhus University, Denmark. Mössbauer spectroscopy is a unique method, giving simultaneously local information on valence/spin state of the $^{57}$Fe probe atoms, site symmetry and magnetic properties on an atomic scale. The utilisation of emission Mössbauer spectroscopy opens up many new possibilities compared with traditional transmission Mössbauer spectroscopy. Among them is the possibility of working with a low concentration below 10$^{-4}$ –10$^{-3}$ at.%, where the implanted Mössbauer $^{57}$Fe probes are truly dilute impurities exclusively interacting with their nearest neighbours and therefore the possibility of crea...

Absolute charge-changing cross sections for fast helium ions-C sub 6 sub 0 collisions

CERN Document Server

Nose, K; Shiraishi, K; Keizaki, T; Itoh, A

2003-01-01

Absolute charge-changing cross sections for fast helium ions passing through a C sub 6 sub 0 gas target have been measured. The measurements were carried out for incident projectile energies at 1.0MeV and 1.5MeV. The measured cross sections are compared with calculated values from Bohr-Lindhard model and Bohr model. In addition, we have obtained equilibrium charge state fractions and average equilibrium charge of helium ions passing through C sub 6 sub 0 , by using the measured cross sections.

Study on surface modification of M2 steel induced by Cu ions and Al ions implantation

International Nuclear Information System (INIS)

Wang Chao; Liu Zhengmin

2001-01-01

Changes of surface hardness and wear resistances in M2 type steel implanted by Cu Al ions were reported. The dependence of surface strengthening on ion species and dose was studied by X-ray diffraction (XRD) and Rutherford Backscattering Spectroscopy (RBS) for microhardness and wear resistances measurement. It is shown that both hardness and wear resistance increases apparently after ion implantation. XRD analysis indicates that different phases formed after Al Cu ions implanted. It is also suggested that Cu, Al ions have different role in surface strengthening

Tribological effects of oxygen ion implantation into stainless steel

International Nuclear Information System (INIS)

Evans, P.J.; Vilaithong, T.; Yu, L.D.; Monteiro, O.R.; Yu, K.M.; Brown, I.G.

2000-01-01

The formation of sub-surface oxide layers by hybrid metal-gas co-implantation into steel and other metals can improve their tribological properties. In this report, we compare the wear and friction performance of previously studied Al + O hybrid implants with that produced by single species oxygen ion (O + ) implantation under similar conditions. The substrates were AISI 304L stainless steel discs polished to a final mirror finish using 1 μm diamond paste, and the ion implantation was done using a conventional swept-beam technique at ion energies of 70 or 140 keV and doses of up to 1x10 17 cm -2 . The wear and friction behaviour of the implanted and unimplanted material was measured with a pin-on-disc tribometer. Here we describe the experimental procedure and results, and discuss the improvement relative to that achieved with surface layers modified by metal-gas co-implantation

Electron capture by fast protons from helium-like ions

International Nuclear Information System (INIS)

Samanta, R.; Purkait, M.

2011-01-01

Four-body formalism of boundary corrected continuum intermediate state (BCCIS-4B) approximation have been applied to calculate the single-electron capture cross sections by fast protons through some helium-like ions in a large energy range from 30-1000 keV. In this model, distortion has been taken into account in the entrance channel. In the final channel, the passive electron plays the role of screening of the target ion. However, continuum states of the projectile and the electron in the field of the residual target ion are included. The comparison of the results is made with those of other theoretical investigations and experimental findings. The present calculated results are found to be in good agreement with the available experimental findings. (authors)

Ion implantation and ion assisted coatings for wear resistance in metals

International Nuclear Information System (INIS)

Dearnaley, G.

1986-01-01

The implantation of electrically accelerated ions of chosen elements into the surface of material provides a method for improving surface properties such as wear resistance. High concentrations of nitrogen implanted into metals create obstacles to dislocation movement, and certain combinations of metallic and non-metallic species will also strengthen the surface. The process is best applied to situations involving mild abrasive wear and operating temperatures that are not too high. Some dramatic increases in life have been reported under such favourable conditions. A more recent development has been the combination of a thin coating with reactive ion bombardment designed to enhance adhesion by ion mixing at the interface and so provide hardness by the formation of finely dispersed nitrides, including cubic boron nitride. These coatings often possess vivid and decorative colours as an added benefit. Developments in the equipment for industrial ion implantation now offer more attractive costs per unit area and a potentially greater throughput of work. A versatile group of related hard vacuum treatments is now emerging, involving the use of intense beams of nitrogen ions for the purpose of tailoring metal surfaces to resist wear. (author)

High-intensity low energy titanium ion implantation into zirconium alloy

Science.gov (United States)

Ryabchikov, A. I.; Kashkarov, E. B.; Pushilina, N. S.; Syrtanov, M. S.; Shevelev, A. E.; Korneva, O. S.; Sutygina, A. N.; Lider, A. M.

2018-05-01

This research describes the possibility of ultra-high dose deep titanium ion implantation for surface modification of zirconium alloy Zr-1Nb. The developed method based on repetitively pulsed high intensity low energy titanium ion implantation was used to modify the surface layer. The DC vacuum arc source was used to produce metal plasma. Plasma immersion titanium ions extraction and their ballistic focusing in equipotential space of biased electrode were used to produce high intensity titanium ion beam with the amplitude of 0.5 A at the ion current density 120 and 170 mA/cm2. The solar eclipse effect was used to prevent vacuum arc titanium macroparticles from appearing in the implantation area of Zr sample. Titanium low energy (mean ion energy E = 3 keV) ions were implanted into zirconium alloy with the dose in the range of (5.4-9.56) × 1020 ion/cm2. The effect of ion current density, implantation dose on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Zr-Ti intermetallic phases of different stoichiometry after Ti implantation. The intermetallic phases are transformed from both Zr0.7Ti0.3 and Zr0.5Ti0.5 to single Zr0.6Ti0.4 phase with the increase in the implantation dose. The changes in phase composition are attributed to Ti dissolution in zirconium lattice accompanied by the lattice distortions and appearance of macrostrains in intermetallic phases. The depth of Ti penetration into the bulk of Zr increases from 6 to 13 μm with the implantation dose. The hardness and wear resistance of the Ti-implanted zirconium alloy were increased by 1.5 and 1.4 times, respectively. The higher current density (170 mA/cm2) leads to the increase in the grain size and surface roughness negatively affecting the tribological properties of the alloy.

High current pelletron for ion implantation

International Nuclear Information System (INIS)

Schroeder, J.B.

1989-01-01

Since 1984, when the first production MeV ion implanter (an NEC model MV-T30) went on-line, interest in versatile electrostatic accelerator systems for MeV ion implantation has grown. The systems use a negative ion source to inject a tandem megavolt accelerator. In early systems the 0.4 mA of charging current from the two Pelletron charging chains in the accelerator was sufficient for the low intensity of beams from the ion source. This 2-chain system, however, is no longer adequate for the much higher beam intensities from today's improved ion sources. A 4-chain charging system, which delivers 1.3 mA to the high voltage terminal, was developed and is in operation in new models of NEC S Series Pelletron accelerators. This paper describes the latest beam performance of 1 MV and 1.7 MW Pelletron accelerators with this new 4-chain charging system. (orig.)

Laws of phase formation in ion-implanted metals

International Nuclear Information System (INIS)

Kazdaev, H.R.; Abylkhalykova, R.B.; Skakov, M.K.

2004-01-01

Full text: Main laws of ordered structures formation at molybdenum implantation by elements forming phases of introduction (B, C, N, 0, Si, P, S) are discovered in this work. According to them the character of structural and phase transformations in molybdenum at ion implantation is determined not by kinetic parameters of bombarding particles and their chemical activity but by size factor η x/Me (ratio of nuclear radii of introduced elements and atoms of a matrix). At change of its meaning in the certain limits the following can be observed: superstructures formation (η x/Mo x/Mo x/Mo >0.69). In the latter case at the further implantation doze increasing recrystallization of molybdenum monocrystalline layers amorphized during previous bombarding with chemical connection formation takes place, characterized by us as ion-inducted synthesis. The phenomenon discovered on the samples implanted by phosphorus ions. As the result, the high-temperature phase of molybdenum monophosphide MoP having densely situated lattice was synthesized. The complete confirmation of the main laws of structural and phased transformations at ion implantation established by results on molybdenum monocrystals with OCC lattice was achieved at realization of similar researches on the other transitive metal - zirconium which differs from molybdenum according to a number of attributes: a type of an initial lattice structural condition (large scaled polycrystal), presence of interparticle borders and high solubility of atmospheric impurities (nitrogen, carbon, oxygen). The discovered laws have proved to be true also according to ion implanted samples of monocrystal tungsten and polycrystal tantalum

Application of ion implantation in metals and alloys

International Nuclear Information System (INIS)

Dearnaley, G.

1981-01-01

Ion implantation first became established as a precise method of introducing dopant elements into semiconductors. It is now appreciated that there may be equally important applications in metallic tools or components with the purpose of improving their resistance to wear, fatigue or corrosion. Nitrogen ions implanted into steels pin dislocations and thereby harden the metal. Some metallic ions such as yttrium reduce the tendency for oxidative wear. There is a fairly good understanding of how both treatments can provide a long-lasting protection that extends to many times the original depth of implantation. Nitrogen implantation also improves the wear resistance of Co-cemented tungsten carbide and of hard chromium electroplated coatings. These treatments have wide application in press tools, molds, dies and other metal-forming tools as well as in a more limited variety of cutting tools. Some striking improvements can be achieved in the corrosion field, but there are economic and technical reasons for concluding that practical applications of ion implantation will be more restricted and specialized in this area. The most promising area is that in which mechanical stress and oxidation coexist. When a metallic species has to be introduced, a promising new development is to bombard a thin coating of the metal at an elevated temperature. Several powerful mechanisms of radiation-enhanced diffusion can bring about a complete intermixing. Examples of how this has been used to produce wear resistant surfaces in titanium are given. Finally, the equipment developed for the large scale application of the ion implantation process in the engineering field is described

Effect of ion implantation on apple wine yeast

International Nuclear Information System (INIS)

Song Andong; Chen Hongge; Zhang Shimin; Jia Cuiying

2004-01-01

The wild type apple wine yeast Y 02 was treated by ion implantation with the dose of 8 x 10 15 ion/cm 2 . As results, a special mutant strain, ION II -11 dry, was obtained. The morphology characters, partial biochemistry characters, mycelium protein of the mutant strain were distinctively changed compared with original strain Y 02 . After the fermentation test ,the apple wine producing rate of the mutant strain increased 22.4% compared with original strain. These results showed that ion implantation was an effective method for mutagenesis

Improvement of tribological properties by ion implantation

International Nuclear Information System (INIS)

Gerve, A.

1993-01-01

Many different measurements confirm that ion implantation changes the friction and wear behaviour, which are the most important properties of tribological systems. Unfortunately, these properties will not always be improved. In industrial application, very often different results of the effects of ion implantation into tools or machine components can be observed, even if the same materials are used. A very important reason for this is the different stresses on the tribological systems. The energy input caused by friction, which is a function of the stress and other parameters of the tribosystem, within a short time leads to the appearance of energy islands, which are statistically distributed over the surfaces. The density of energy within these tiny energy islands is very high. Results of these high energy densities is a mutation of the material's composition and structure within a very thin layer of less than 100 nm underneath the surface and wear. Ion implantation also changes the composition and structure of the bulk material close to the surface. Thus there is urgent need to understand tribo-induced mutations of ion-implanted materials and their influence on the tribological properties. For that reason surface analyses have to be carried out to determine the composition and structure of the materials and the mutation caused by friction and wear

Investigation of hydrogen micro-kinetics in metals with ion beam implantation and analysis

International Nuclear Information System (INIS)

Wang, T.S.; Peng, H.B.; Lv, H.Y.; Han, Y.C.; Grambole, D.; Herrmann, F.

2007-01-01

One of the most important subjects in the fusion material research is to study the hydrogen and helium concentration, diffusion and evolution in the structure material of fusion reactor, since the hydrogen and helium can be continuously produced by the large dose fast neutron irradiation on material. Various analysis Methods can be used, but the ion beam analysis method has some advantages for studying the hydrogen behaviors in nano- or micrometer resolution. In this work, the hydrogen motion and three-dimensional distribution after implantation into metal has been studied by resonance NRA, micro-ERDA and XRD etc Methods. The resolution of the H-depth-profile is in nanometer level and the lateral resolution can be reached to 2 micrometers. The evolution of hydrogen depth-profile in a titanium sample has been studied versus the change of normal stress in samples. Evident hydrogen diffusion has been observed, while a normal stress is changed in the range of 107-963 MPa. A new phase transformation during the hydrogenation is observed by the in-situ XRD analysis. The further study on the hydrogen behaviors in the structure materials of fusion reactor is in plan. (authors)

DC plasma ion implantation in an inductively coupled RF plasma

International Nuclear Information System (INIS)

Silawatshananai, C.; Matan, N.; Pakpum, C.; Pussadee, N.; Srisantitam, P.; Davynov, S.; Vilaithong, T.

2004-01-01

Various modes of plasma ion implantation have been investigated in a small inductively coupled 13.6 MHz RF plasma source. Plasma ion implantation with HVDC(up to -10 kV bias) has been investigated in order to incorporate with the conventional implantation of diamond like carbon. In this preliminary work, nitrogen ions are implanted into the stainless steel sample with a dose of 5.5 x 10 -2 cm for a short implanting time of 7 minutes without target cooling. Surface properties such as microhardness, wear rate and the friction coefficient have been improved. X-ray and SEM analyses show distinct structural changes on the surface. A combination of sheath assisted implantation and thermal diffusion may be responsible for improvement in surface properties. (orig.)

Carbon dioxide ion implantation in Titanium Nitride (Ti N)

International Nuclear Information System (INIS)

Torabi, Sh.; Sari, A. H.; Hojabri, A.; Ghoranneviss, M.

2007-01-01

Nitrogen ion implantation on titanium samples performed at 3x10 18 , 8x10 17 , 3x10 18 doses. In addition CO 2 ions were also implanted at doses in the range of 1x10 17 ,4 x10 17 ,8x10 17 . Atomic Force Microscopy, used to investigate the topographical changes of implanted samples. The structure of samples and phase composition were characterized using x-ray diffraction. The results show that by increasing of nitrogen ions, the roughness, grain sizes and hardness will increase. But by further increasing of dose, hardness will be decreased. The CO 2 implantation also enhance the roughness, grain size and hardness which could be caused by phase composition.

Optimal pulse modulator design criteria for plasma source ion implanters

International Nuclear Information System (INIS)

Reass, W.

1993-01-01

This paper describes what are believed to be the required characteristics of a high-voltage modulator for efficient and optimal ion deposition from the ''Plasma Source Ion Implantation'' (PSII) process. The PSII process is a method to chemically or physically alter and enhance surface properties of objects by placing them in a weakly ionized plasma and pulsing the object with a high negative voltage. The attracted ions implant themselves and form chemical bonds or are interstitially mixed with the base material. Present industrial uses of implanted objects tends to be for limited-production, high-value-added items. Traditional implanting hardware uses the typical low-current (ma) semiconductor ''raster scan'' implanters. The targets must also be manipulated to maintain a surface normal to the ion beam. The PSII method can provide ''bulk'' equipment processing on a large industrial scale. For the first generation equipment, currents are scaled from milliamps to hundreds of amps, voltages to -175kV, at kilohertz rep-rates, and high plasma ion densities

Effects of helium ions of an early embryo on postembryonic leaf development in Brassica napus L.

Energy Technology Data Exchange (ETDEWEB)

Sakurai, Noboru [Tokyo Metropolitan Industrial Technology Research Institute, Tokyo (Japan); Minami, Harufumi [Tokyo Metropolitan Agricultural Experiment Station, Tachikawa, Tokyo (Japan); Shikazono, Naoya; Tanaka, Atsushi; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

2000-12-01

We examined postembryonic effects after helium ion and gamma ray irradiation of an isolated whole flower (a flower with pedicel) of Brassica napus through a flower organ culture, and estimated the effects of irradiation on embryogenesis in sexual reproductive stages. The whole flowers were irradiated with 30 Gy of helium ions and gamma rays in the early globular embryo and/or torpedo embryo stages. The helium ion and gamma ray irradiation of early globular embryos caused some drastic malformations in the first true leaves. Those malformations were classified into four types: cup-shaped, funnel-shaped, shrunk and the other varied leaves. The types were observed in 40% of plants that developed first true leaves. Both cup-shaped and funnel-shaped types were observed in over 15%. On the other hand, the irradiation of gamma rays of torpedo embryos caused sectors lacking chlorophyll in first true leaves. (author)

Ion implantation apparatus

International Nuclear Information System (INIS)

Forneris, J.L.; Hicks, W.W.; Keller, J.H.; McKenna, C.M.; Siermarco, J.A.; Mueller, W.F.

1981-01-01

The invention relates to ion bombardment or implantation apparatus. It comprises an apparatus for bombarding a target with a beam of ions, including an arrangement for measuring the ion beam current and controlling the surface potential of the target. This comprises a Faraday cage formed, at least in part, by the target and by walls adjacent to, and electrically insulated from, the target and surrounding the beam. There is at least one electron source for supplying electrons to the interior of the Faraday cage and means within the cage for blocking direct rectilinear radiation from the source to the target. The target current is measured and combined with the wall currents to provide a measurement of the ion beam current. The quantity of electrons supplied to the interior of the cage can be varied to control the target current and thereby the target surface potential. (U.K.)

High resolution helium ion scanning microscopy of the rat kidney.

Directory of Open Access Journals (Sweden)

William L Rice

Full Text Available Helium ion scanning microscopy is a novel imaging technology with the potential to provide sub-nanometer resolution images of uncoated biological tissues. So far, however, it has been used mainly in materials science applications. Here, we took advantage of helium ion microscopy to explore the epithelium of the rat kidney with unsurpassed image quality and detail. In addition, we evaluated different tissue preparation methods for their ability to preserve tissue architecture. We found that high contrast, high resolution imaging of the renal tubule surface is possible with a relatively simple processing procedure that consists of transcardial perfusion with aldehyde fixatives, vibratome tissue sectioning, tissue dehydration with graded methanol solutions and careful critical point drying. Coupled with the helium ion system, fine details such as membrane texture and membranous nanoprojections on the glomerular podocytes were visualized, and pores within the filtration slit diaphragm could be seen in much greater detail than in previous scanning EM studies. In the collecting duct, the extensive and striking apical microplicae of the intercalated cells were imaged without the shrunken or distorted appearance that is typical with conventional sample processing and scanning electron microscopy. Membrane depressions visible on principal cells suggest possible endo- or exocytotic events, and central cilia on these cells were imaged with remarkable preservation and clarity. We also demonstrate the use of colloidal gold probes for highlighting specific cell-surface proteins and find that 15 nm gold labels are practical and easily distinguishable, indicating that external labels of various sizes can be used to detect multiple targets in the same tissue. We conclude that this technology represents a technical breakthrough in imaging the topographical ultrastructure of animal tissues. Its use in future studies should allow the study of fine cellular details

Quantum effects in ion implanted devices

International Nuclear Information System (INIS)

Jamieson, D.N.; Chan, V.; Hudson, F.E.; Andresen, S.E.; Yang, C.; Hopf, T.; Hearne, S.M.; Pakes, C.I.; Prawer, S.; Gauja, E.; Yang, C.; Dzurak, A.S.; Yang, C.; Clark, R.G.; Yang, C.

2005-01-01

Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because it will be necessary to control quantum states at the level of individual atoms, electrons or photons. We have developed a pathway to the construction of quantum devices using ion implantation and demonstrate, using charge transport analysis, that the devices exhibit single electron effects. We construct devices that employ two P donors in Si by employing the technique of ion beam induced charge (IBIC) in which single 14 keV P ions can be implanted into ultra-pure silicon by monitoring on-substrate detector electrodes. We have used IBIC with a MeV nuclear microprobe to map and measure the charge collection efficiency in the development of the electrode structure and show that 100% charge collection efficiency can be achieved leading to the fabrication of prototype devices that display quantum effects in the transport of single charge quanta between the islands of implanted donors. (author). 9 refs., 4 figs., 1 tab

Ion-implanted PLZT ceramics: a new high-sensitivity image storage medium

International Nuclear Information System (INIS)

Peercy, P.S.; Land, C.E.

1980-01-01

Results were presented of our studies of photoferroelectric (PFE) image storage in H- and He-ion implanted PLZT (lead lanthanum zirconate titanate) ceramics which demonstrate that the photosensitivity of PLZT can be significantly increased by ion implantation in the ceramic surface to be exposed to image light. More recently, implantations of Ar and Ar + Ne into the PLZT surface have produced much greater photosensitivity enhancement. For example, the photosensitivity after implantation with 1.5 x 10 14 350 keV Ar/cm 2 + 1 x 10 15 500 keV Ne/cm 2 is increased by about four orders of magnitude over that of unimplanted PLZT. Measurements indicate that the photosensitivity enhancement in ion-implanted PLZT is controlled by implantation-produced disorder which results in marked decreases in dielectric constant and dark conductivity and changes in photoconductivity of the implanted layer. The effects of Ar- and Ar + Ne-implantation are presented along with a phenomenological model which describes the enhancement in photosensitivity obtained by ion implantation. This model takes into account both light- and implantation-induced changes in conductivity and gives quantitative agreement with the measured changes in the coercive voltage V/sub c/ as a function of near-uv light intensity for both unimplanted and implanted PLZT. The model, used in conjunction with calculations of the profiles of implantation-produced disorder, has provided the information needed for co-implanting ions of different masses, e.g., Ar and Ne, to improve photosensitivity

Plasma immersion ion implantation: duplex layers from a single process

International Nuclear Information System (INIS)

Hutchings, R.; Collins, G.A.; Tendys, J.

1992-01-01

Plasma immersion ion implantation (PI 3 ) is an alternative non-line-of-sight technique for implanting ions directly from a plasma which surrounds the component to be treated. In contrast to plasma source ion implantation, the PI 3 system uses an inductively coupled r.f. plasma. It is shown that nitrogen can be retained during implantation at elevated temperatures, even for unalloyed steels. This allows controlled diffusion of nitrogen to greater depths, thereby improving the load bearing capacity of the implanted layer. Components can be heated directly, using the energy deposited by the incident ions during the pulsed implantation. The necessary temperature control can be accomplished simply by regulating the frequency and length of the high voltage pulses applied to the component. Chemical depth profiles and microstructural data obtained from H13 tool steel are used to show that PI 3 can, in a single process, effectively produce a duplex subsurface structure. This structure consists of an outer non-equilibrium layer typical of nitrogen implantation (containing in excess of 20 at.% nitrogen) backed by a substantial diffusion zone of much lower nitrogen content. The relationship between implantation temperature and the resultant subsurface microstructure is explored. (orig.)

Cell adhesion of F{sup +} ion implantation of intraocular lens

Energy Technology Data Exchange (ETDEWEB)

Li, D.J. E-mail: dejunli@hotmail.com; Cui, F.Z.; Gu, H.Q

1999-04-01

The cell adhesion of ion implanted polymethylmethacrylate (PMMA) intraocular lens was studied using cultured cells in vitro. F{sup +} ion implantation was performed at the energies of 40, 60, 80, 100 keV with the fluences ranging from 5x10{sup 13} to 1x10{sup 15} ions/cm{sup 2} at room temperature. The cell adhesion tests gave interesting results that the number of the neutral granulocytes and the macrophages adhering on surface were reduced significantly after ion implantation. The optimal fluence was about 4x10{sup 14} ions/cm{sup 2}. The hydrophobicity imparted to the lens surface was also enhanced. The results of X-ray photoelectron spectroscopy analysis indicated that ion implantation resulted in the cleavage of some pendant groups, the oxidation of the surface, and the formation of some new chemical bonds, which was probably the main reason for the cell adhesion change.

Cell patterning on a glass surface by a mask-assisted ion implantation

Energy Technology Data Exchange (ETDEWEB)

Jung, Chan-Hee; Kim, Dong-Ki; Hwang, In-Tae; Lim, Youn-Mook; Kim, Hae-Kyoung; Nho, Young-Chang [Radiation Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup-si, Jeollabuk-do 580-185 (Korea, Republic of); Choi, Jae-Hak [Radiation Research Division for Industry and Environment, Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute, 1266 Sinjeong-dong, Jeongeup-si, Jeollabuk-do 580-185 (Korea, Republic of)], E-mail: jaehakchoi@kaeri.re.kr

2009-04-15

A simple patterning method of cells on a glass has been developed by using ion implantation. The glass was implanted through a pattern mask with 150 keV Ar ions in the absence or presence of oxygen. Surface properties of the ion-implanted glass were investigated by means of X-ray photoelectron spectroscopy, contact angle measurement and cell culture test. The results showed that more hydrophilic groups were formed on the glass surface implanted in the presence of oxygen. Thus, the glass surface implanted in the presence of oxygen showed lower contact angle compared with the glass surface implanted in the absence of oxygen. The cells were strongly adhered to and proliferated on the ion-implanted regions of the glass. The cell population was found to be the highest on the glass implanted at a fluence of 1 x 10{sup 16} ions/cm{sup 2} in the presence of oxygen.

Materials science issues of plasma source ion implantation

International Nuclear Information System (INIS)

Nastasi, M.; Faehl, R.J.; Elmoursi, A.A.

1996-01-01

Ion beam processing, including ion implantation and ion beam assisted deposition (IBAD), are established surface modification techniques which have been used successfully to synthesize materials for a wide variety of tribological applications. In spite of the flexibility and promise of the technique, ion beam processing has been considered too expensive for mass production applications. However, an emerging technology, Plasma Source Ion Implantation (PSII), has the potential of overcoming these limitations to become an economically viable tool for mass industrial applications. In PSII, targets are placed directly in a plasma and then pulsed-biased to produce a non-line-of-sight process for intricate target geometries without complicated fixturing. If the bias is a relatively high negative potential (20--100 kV) ion implantation will result. At lower voltages (50--1,200 V), deposition occurs. Potential applications for PSII are in low-value-added products such as tools used in manufacturing, orthopedic devices, and the production of wear coatings for hard disk media. This paper will focus on the technology and materials science associated with PSII

The ion implantation of metals and engineering materials

International Nuclear Information System (INIS)

Dearnaley, G.

1978-01-01

An entirely new method of metal finishing, by the process of ion implantation, is described. Introduced at first for semiconductor device applications, this method has now been demonstrated to produce major and long-lasting improvements in the durability of material surfaces, as regards both wear and corrosion. The process is distinct from that of ion plating, and it is not a coating technique. After a general description of ion implantation examples are given of its effects on wear behaviour (mostly in steels and cemented carbides) and on corrosion, in a variety of metals and alloys. Its potential for producing decorative finishes is mentioned briefly. The equipment necessary for carrying out ion implantation for engineering applications has now reached the prototype stage, and manufacture of plant for treating a variety of tools and components is about to commence. These developments are outlined. (author)

Improving Aspergillus niger tannase yield by N+ ion beam implantation

Directory of Open Access Journals (Sweden)

Wei Jin

2013-02-01

Full Text Available This work aimed to improve tannase yield of Aspergillus niger through N+ ion beam implantation in submerged fermentation. The energy and dose of N+ ion beam implantation were investigated. The results indicated that an excellent mutant was obtained through nine successive implantations under the conditions of 10 keV and 30-40 (×2.6×10(13 ions/cm², and its tannase yield reached 38.5 U/mL, which was about five-time higher than the original strain. The study on the genetic stability of the mutant showed that its promising performance in tannase production could be stable. The studies of metal ions and surfactants affecting tannase yield indicated that manganese ions, stannum ions, xylene and SDS contained in the culture medium had positive effects on tannase production under submerged fermentation. Magnesium ions, in particular, could enhance the tannase yield by the mutant increasing by 42%, i.e. 53.6 U/mL. Accordingly, low-energy ion implantation could be a desirable approach to improve the fungal tannase yield for its commercial application.

A one-dimensional collisional model for plasma-immersion ion implantation

International Nuclear Information System (INIS)

Vahedi, V.; Lieberman, M.A.; Alves, M.V.; Verboncoeur, J.P.; Birdsall, C.K.

1991-01-01

Plasma-immersion ion implantation (also known as plasma-source ion implantation) is a process in which a target is immersed in a plasma and a series of large negative-voltage pulses are applied to it to extract ions from the plasma and implant them into the target. A general one-dimensional model is developed to study this process in different coordinate systems for the case in which the pressure of the neutral gas is large enough that the ion motion in the sheath can be assumed to be highly collisional

Silicon carbide layer structure recovery after ion implantation

International Nuclear Information System (INIS)

Violin, Eh.E.; Demakov, K.D.; Kal'nin, A.A.; Nojbert, F.; Potapov, E.N.; Tairov, Yu.M.

1984-01-01

The process of recovery of polytype structure of SiC surface layers in the course of thermal annealing (TA) and laser annealing (LA) upon boron and aluminium implantation is studied. The 6H polytype silicon carbide C face (0001) has been exposed to ion radiation. The ion energies ranged from 80 to 100 keV, doses varied from 5x10 14 to 5x10 16 cm -2 . TA was performed in the 800-2000 K temperature range. It is shown that the recovery of the structure of silicon carbide layers after ion implantation takes place in several stages. Considerable effect on the structure of the annealed layers is exerted by the implantation dose and the type of implanted impurity. The recovery of polytype structure is possible only under the effect of laser pulses with duration not less than the time for the ordering of the polytype in question

Ion implantation in semiconductor bodies

International Nuclear Information System (INIS)

Badawi, M.H.

1984-01-01

Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium disposed between the substrate surface and the photoresist mask. After implantation the mask and metallic layer are removed and the substrate heat treated for annealing purposes. The metallic layer acts as a buffer layer and prevents possible contamination of the substrate surface, by photoresist residues, at the annealing stage. Such contamination would adversely affect the electrical properties of the substrate surface, particularly gallium arsenide substrates. (author)

Hardness of ion implanted ceramics

International Nuclear Information System (INIS)

Oliver, W.C.; McHargue, C.J.; Farlow, G.C.; White, C.W.

1985-01-01

It has been established that the wear behavior of ceramic materials can be modified through ion implantation. Studies have been done to characterize the effect of implantation on the structure and composition of ceramic surfaces. To understand how these changes affect the wear properties of the ceramic, other mechanical properties must be measured. To accomplish this, a commercially available ultra low load hardness tester has been used to characterize Al 2 O 3 with different implanted species and doses. The hardness of the base material is compared with the highly damaged crystalline state as well as the amorphous material

Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation

International Nuclear Information System (INIS)

Bridwell, L.B.; Giedd, R.E.; Wang Yongqiang; Mohite, S.S.; Jahnke, T.; Brown, I.M.

1991-01-01

Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 10 16 -10 17 ions/cm 2 . Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As. (orig.)

Optical stability under photo-irradiation of urushi films by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Awazu, Kaoru; Funada, Yoshinori; Kasamori, Masato; Sakamoto, Makoto; Ichikawa, Tachio [Industrial Research Inst. of Ishikawa, Kanazawa (Japan)

1995-06-01

Nitrogen ions, argon ions and others were implanted in urushi-coated surfaces by using a simplified ion implantation apparatus, and the optical stability test was carried out by a sunshine weather meter. The rate of remaining luster on urushi-coated surfaces accompanying ultraviolet irradiation showed respective peculiar behavior according to the kinds of the implanted ions, the time of implantation, transparent and black urushi films, and the use of brightener or not. In electron beam irradiation, change hardly occurred. In urushi-coated products, the luster and the properties are maintained for long period, therefore recently, urushi coating has become to be applied to road sign panels and notice boards in addition to lacquer wares and applied fine art products, and the improvement of the optical stability of urushi films has become the subject. In this study, the experimental methods on urushi coating, ion implantation, the optical stability test and measuring method are explained. The changes of urushi film luster, transmittance, haze, lightness, and chromaticity by nitrogen ion implantation are reported. (K.I.).

Optical stability under photo-irradiation of urushi films by ion implantation

International Nuclear Information System (INIS)

Awazu, Kaoru; Funada, Yoshinori; Kasamori, Masato; Sakamoto, Makoto; Ichikawa, Tachio

1995-01-01

Nitrogen ions, argon ions and others were implanted in urushi-coated surfaces by using a simplified ion implantation apparatus, and the optical stability test was carried out by a sunshine weather meter. The rate of remaining luster on urushi-coated surfaces accompanying ultraviolet irradiation showed respective peculiar behavior according to the kinds of the implanted ions, the time of implantation, transparent and black urushi films, and the use of brightener or not. In electron beam irradiation, change hardly occurred. In urushi-coated products, the luster and the properties are maintained for long period, therefore recently, urushi coating has become to be applied to road sign panels and notice boards in addition to lacquer wares and applied fine art products, and the improvement of the optical stability of urushi films has become the subject. In this study, the experimental methods on urushi coating, ion implantation, the optical stability test and measuring method are explained. The changes of urushi film luster, transmittance, haze, lightness, and chromaticity by nitrogen ion implantation are reported. (K.I.)

Study of damage and helium diffusion in fluoro-apatites; Etude de l'endommagement et de la diffusion de l'helium dans des fluoroapatites

Energy Technology Data Exchange (ETDEWEB)

Miro, S

2004-12-15

This work lies within the scope of the study of the radionuclides containment matrices. The choice of the fluoro-apatites as potential matrices of containment was suggested by the notable properties of these latter (thermal and chemical stability even under radioactive radiation). By irradiations with heavy ions and a helium implantation we simulated the effects related to the alpha radioactivity and to the spontaneous nuclear fission of the radionuclides. Thanks to the study of Durango fluoro-apatite single crystals and fluoro-apatite sintered ceramics, we evidenced that the damage fraction as well as the unit cell deformations increase with the electronic energy loss and with the substitution. These effects are followed at high fluences by a phenomenon of re-crystallization. The study of the helium diffusion points out that the thermal diffusion process improves with the substitution and strongly increases with heavy ions irradiation. (author)

Production of amorphous alloys by ion implantation

International Nuclear Information System (INIS)

Grant, W.A.; Chadderton, L.T.; Johnson, E.

1978-01-01

Recent data are reported on the use of ion implantation to produce amorphous metallic alloys. In particular data on the dose dependence of the crystalline to amorphous transition induced by P + implantation of nickel is presented. (Auth.)

Nitrogen ion implantation: Barriers to industrial acceptance and prospects for the future

International Nuclear Information System (INIS)

Alexander, R.B.

1989-01-01

Nitrogen ion implantation has been used to improve the wear and fatigue resistance of metals in industrial applications since the process was developed at the UK Harwell Laboratory in the 1970s. However, implantation service companies like Ion Surface Technology have found so far that the market for nitrogen implantation is limited. Both market and technical barriers exist to more widespread acceptance in industry. Market factors include cost, industrial conservatism, and production priorities in manufacturing. Technical factors include the size of available implanters, the line-of-sight limitation of ion implantation, sputtering, and other process limitations such as shallow penetration depth. Several recent technical developments that should greatly increase market acceptance are described: 1. large-scale nitrogen implanters, 2. the non-line-of-sight plasma source ion implantation process, and 3. ion assisted coating techniques. (orig.)

High-temperature superconductors induced by ion implantation. Final report

International Nuclear Information System (INIS)

Greenwald, A.C.; Johnson, E.

1988-08-01

High dose oxygen ion implantation (10 to the 17th power ions per sq. cm.) at elevated temperatures (300 C) has been shown to adjust the critical temperature of gamma-Y-Ba-Cu-O and Bi-Ca-Sr-Cu-O materials. These results are in marked contrast to earlier work which showed complete destruction of superconducting properties for similar radiation doses, and marked reduction in superconducting properties at one-tenth this dose in the 1-2-3- compound only. Experiments also showed that the superconducting materials can be patterned into conducting and nonconducting areas without etching by ion implantation, allowing maintenance of planar geometries required for microcircuit fabrication. Experiments on deposition of thin films of high temperature superconductors for use with the ion implantation experiments showed that ion beam sputtering from a single target could achieve the correct stoichiometry. Variations of composition with ion beam energy and angle of sputtered ions were studied

Target-ion source unit ionization efficiency measurement by method of stable ion beam implantation

CERN Document Server

Panteleev, V.N; Fedorov, D.V; Moroz, F.V; Orlov, S.Yu; Volkov, Yu.M

The ionization efficiency is one of the most important parameters of an on-line used target-ion source system exploited for production of exotic radioactive beams. The ionization efficiency value determination as a characteristic of a target-ion source unit in the stage of its normalizing before on-line use is a very important step in the course of the preparation for an on-line experiment. At the IRIS facility (Petersburg Nuclear Physics Institute, Gatchina) a reliable and rather precise method of the target-ion source unit ionization efficiency measurement by the method of stable beam implantation has been developed. The method worked out exploits an off-line mass-separator for the implantation of the ion beams of selected stable isotopes of different elements into a tantalum foil placed inside the Faraday cup in the focal plane of the mass-separator. The amount of implanted ions has been measured with a high accuracy by the current integrator connected to the Faraday cup. After the implantation of needed a...

Recent advances in ion implantation. A state of the art review

International Nuclear Information System (INIS)

Stone, J.L.; Plunkett, J.C.

1976-01-01

The latest advances in ion implantation related to MOS, CMOS, CCDS, I 2 L, and other semiconductor devices are discussed. In addition, the application of ion implantation to superconductivity, integrated optics, compound semiconductors, and magnetic bubbles is considered. The requirements of ion implantation machine technology to fulfill the needs of the production environment are also reviewed. 75 refs

Investigation of Steel Surfaces Treated by a Hybrid Ion Implantation Technique

International Nuclear Information System (INIS)

Reuther, H.; Richter, E.; Prokert, F.; Ueda, M.; Beloto, A. F.; Gomes, G. F.

2004-01-01

Implantation of nitrogen ions into stainless steel in combination with oxidation often results in a decrease or even complete removal of the chromium in the nitrogen containing outermost surface layer. While iron nitrides can be formed easily by this method, due to the absence of chromium, the formation of chromium nitrides is impossible and the beneficial influence of chromium in the steel for corrosion resistance cannot be used. To overcome this problem we use the following hybrid technique. A thin chromium layer is deposited on steel and subsequently implanted with nitrogen ions. Chromium can be implanted by recoil into the steel surface and thus the formation of iron/chromium nitrides should be possible. Both beam line ion implantation and plasma immersion ion implantation are used. Due to the variation of the process parameters, different implantation profiles and different compounds are produced. The produced layers are characterized by Auger electron spectroscopy, conversion electron Moessbauer spectroscopy and X-ray diffraction. The obtained results show that due to the variation of the implantation parameters, the formation of iron/chromium nitrides can be achieved and that plasma immersion ion implantation is the most suitable technique for the enrichment of chromium in the outermost surface layer of the steel when compared to the beam line implantation.

Modification of polyethyleneterephtalate by implantation of nitrogen ions

International Nuclear Information System (INIS)

Svorcik, V.; Endrst, R.; Rybka, V.; Hnatowicz, V.; Cerny, F.

1994-01-01

The implantation of 90 keV N + ions into polyethyleneterephtalate (PET) to fluences of 1 x 10 14 --1 x 10 17 cm -2 was studied. The changes in electrical sheet conductivity and polarity of ion-exposed PET were observed and the structural changes were examined using IR spectroscopy. One degradation process is a chain fission according to the Norrish II reaction. The sheet conductivity due to conjugated double bonds was increased by ten orders of magnitude as a result of ion implantation. The surface polarity of the PET samples increases slightly with increasing ion fluence