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Sample records for heavy sn sb

  1. Comparison of the electrochemical performance of mesoscopic Cu2Sb, SnSb and Sn/SnSb alloy powders

    International Nuclear Information System (INIS)

    Zhang Ge; Huang Kelong; Liu Suqin; Zhang Wei; Gong Benli

    2006-01-01

    Cu 2 Sb, SnSb and Sn/SnSb mesoscopic alloy powders were prepared by chemical reduction, respectively. The crystal structures and particle morphology of Cu 2 Sb, SnSb and Sn/SnSb were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrochemical performances of the Cu 2 Sb, SnSb and Sn/SnSb electrodes were investigated by galvanostatic charge and discharge cycling and electrochemical impedance spectroscopy (EIS). The results showed the first charge and discharge capacities of SnSb and Sn/SnSb were higher than Cu 2 Sb, but after 15 cycles, the charge capacity fading rates of Cu 2 Sb, Sn/SnSb and Sn/SnSb were 26.16%, 55.33% and 47.39%, respectively. Cu 2 Sb had a better cycle performance, and Sn/SnSb multiphase alloy was prior to pure SnSb due to the existence of excessive Sn in Sn/SnSb system

  2. Liquidus Projection and Isothermal Section of the Sb-Se-Sn System

    Science.gov (United States)

    Chang, Jui-shen; Chen, Sinn-wen

    2017-12-01

    Sb-Se-Sn ternary alloys are promising chalcogenide materials. The liquidus projection and 673.2 K (400 °C) isothermal section of the Sb-Se-Sn ternary system are determined. Numerous Sb-Se-Sn alloys are prepared, and their primary solidification phases are examined. In addition to the three terminal phases, (Sb), (Se) and (Sn), there are Sb2Sn3, SbSn, SnSe, SnSe2, Sb2Se3, Sn2Sb9Se9, and SnSb2Se4 phases. In addition, there are two miscibility gaps along the Sb-Se and Se-Sn and sides. There are ten invariant reactions in the Sb-Se-Sn ternary system, and seven of them are experimentally determined in this study. The lowest reaction temperature of determined invariant reaction is L + SbSn = (Sn) + SnSe at 515.4 K ± 5 K (242.2 °C ± 5 °C). There are nine tie-triangles, which are Liquid + SbSn + SnSe, SbSn + SnSe + (Sb), SnSe + (Sb) + Sn2Sb9Se9, (Sb) + Sb2Se3 + Sn2Sb9Se9, SnSe + Sn2Sb9Se9 + SnSb2Se4, Sb2Se3 + Sn2Sb9Se9 + SnSb2Se4, SnSe + SnSe2 + SnSb2Se4, SnSe2 + SnSb2Se4 + Sb2Se3, and SnSe2 + Sb2Se3 + Liquid in the 673.2 K (400 °C) isothermal section of the Sb-Se-Sn ternary system.

  3. Decays of 116Sb isomers to levels in 116Sn

    International Nuclear Information System (INIS)

    Gacsi, Z.; Raman, S.

    1994-01-01

    The excited states of 116 Sn were studied by means of the decays of the 15.8-min, 3 + 116 Sb ground state, and the 60.3-min, 8 - 116 Sb isomer. Over 50 γ rays were observed; these were incorporated into a level scheme consisting of 32 excited states. Except for one new level proposed at 3.986 MeV, the current study fully supports an exhaustive study of levels in 116 Sn reported earlier. The previous study was an attempt to develop a nearly ''complete'' level scheme of 116 Sn up to an excitation energy of 4.3 MeV

  4. Interface between Sn-Sb-Cu solder and copper substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sebo, P., E-mail: Pavel.Sebo@savba.sk [Institute of Materials and Machine Mechanics, Slovak Academy of Sciences, Racianska 75, 831 02 Bratislava 3 (Slovakia); Svec, P. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Faculty of Materials Science and Technology, Slovak University of Technology, J. Bottu 25, 917 24 Trnava (Slovakia); Janickovic, D.; Illekova, E. [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 845 11 Bratislava 45 (Slovakia); Plevachuk, Yu. [Ivan Franko National University, Department of Metal Physics, 79005 Lviv (Ukraine)

    2011-07-15

    Highlights: {yields} New lead-free solder materials based on Sn-Sb-Cu were designed and prepared. {yields} Melting and solidification temperatures of the solders have been determined. {yields} Cu-substrate/solder interaction has been analyzed and quantified. {yields} Phases formed at the solder-substrate interface have been identified. {yields} Composition and soldering atmospheres were correlated with joint strength. - Abstract: Influence of antimony and copper in Sn-Sb-Cu solder on the melting and solidification temperatures and on the microstructure of the interface between the solder and copper substrate after wetting the substrate at 623 K for 1800 s were studied. Microstructure of the interface between the solder and copper substrates in Cu-solder-Cu joints prepared at the same temperature for 1800 s was observed and shear strength of the joints was measured. Influence of the atmosphere - air with the flux and deoxidising N{sub 2} + 10H{sub 2} gas - was taken into account. Thermal stability and microstructure were studied by differential scanning calorimetry (DSC), light microscopy, scanning electron microscopy (SEM) with energy-dispersive spectrometry (EDS) and X-ray diffraction (XRD). Melting and solidification temperatures of the solders were determined. An interfacial transition zone was formed by diffusion reaction between solid copper and liquid solder. At the interface Cu{sub 3}Sn and Cu{sub 6}Sn{sub 5} phases arise. Cu{sub 3}Sn is adjacent to the Cu substrate and its thickness decreases with increasing the amount of copper in solder. Scallop Cu{sub 6}Sn{sub 5} phase is formed also inside the solder drop. The solid solution Sn(Sb) and SbSn phase compose the interior of the solder drop. Shear strength of the joints measured by push-off method decreases with increasing Sb concentration. Copper in the solder shows even bigger negative effect on the strength.

  5. Old friends in a new light: 'SnSb' revisited

    International Nuclear Information System (INIS)

    Noren, Lasse; Withers, Ray L.; Schmid, Siegbert; Brink, Frank J.; Ting, Valeska

    2006-01-01

    The binary pnictide 'SnSb' has been re-investigated using a combination of X-ray, synchrotron and electron diffraction as well as electron microprobe analysis. Its structure was found to be incommensurately modulated with an underlying rhombohedral parent structure of space group symmetry R3-bar m (No. 166), unit cell parameters a h =b h =4.3251(4)A, c h =5.3376(6)A in the hexagonal setting. The incommensurate primary modulation wave vector q h =1.3109(9)c h * and the superspace group symmetry is R3-bar m (0, 0, ∼1.311) (No. 166.1). The refinement of the incommensurate structure indicates that the satellite reflections arise from displacive shifts of presumably essentially pure Sn and Sb layers along the hexagonal c-axis, with increasing distance between the Sn-layers and decreasing distance between the Sb layers

  6. Experimental Study of the Sb-Sn-Zn Alloy System

    Czech Academy of Sciences Publication Activity Database

    Zobač, O.; Sopoušek, J.; Buršík, Jiří; Zemanová, Adéla; Roupcová, Pavla

    2014-01-01

    Roč. 45, č. 3 (2014), s. 1181-1188 ISSN 1073-5623 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : Sb-Sn-Zn system * thermal analysis * CALPHAD method Subject RIV: BJ - Thermodynamics Impact factor: 1.730, year: 2014

  7. Microalloying with Cd of Antifriction Sn-Sb-Cu Alloys

    Directory of Open Access Journals (Sweden)

    Cinca Ionel Lupinca

    2012-09-01

    Full Text Available In the case of bimetallic sliding linings with superior technological characteristics, the use of an antifriction ally is imposed an alloy of the type Sn-Sb-Cu, which possesses a high adherence to the steel stand and a high durability in exploitation. For this reason we use the microalloying of the antifriction alloy with cadmium. The microalloying with Cd of antifriction alloys Sn-Sb-Cu determines an increase of the adhesion property of the antifriction alloy on the steel stand. The steel stand is previously subjected to a process of degreasing with ZnCl2 and washing so that is can later be subjected to a thermal-chemical treatment of tinning.

  8. Phase Equilibria in the Sn-Rich Corner of the Ni-Sb-Sn System

    Czech Academy of Sciences Publication Activity Database

    Mishra, R.; Kroupa, Aleš; Zemanová, Adéla; Ipser, H.

    2013-01-01

    Roč. 42, č. 4 (2013), s. 646-653 ISSN 0361-5235 Institutional support: RVO:68081723 Keywords : lead-free solder * high-temperature solder * Ni-Sb-Sn system Subject RIV: BJ - Thermodynamics Impact factor: 1.675, year: 2013

  9. Electrochemical studies of CNT/Si–SnSb nanoparticles for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Nithyadharseni, P. [Department of Physics, Bannari Amman Institute of Technology, Sathyamangalam 638402 (India); Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore); Reddy, M.V., E-mail: phymvvr@nus.edu.sg [Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore); Nalini, B., E-mail: lalin99@rediffmail.com [Department of Physics, Avinashilingam University for Women, Coimbatore 641043 (India); Ravindran, T.R. [Centre for Research in Nanotechnology, Karunya University, Coimbatore 641114 (India); Pillai, B.C.; Kalpana, M. [Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102 (India); Chowdari, B.V.R. [Department of Physics, Advanced Batteries Lab, National University of Singapore, 117542 (Singapore)

    2015-10-15

    Highlights: • Si added SnSb and CNT exhibits very low particle size of below 30 nm • A strong PL quenching due to the addition of Si to SnSb. • Electrochemical studies show CNT added SnSb shows good capacity retention. - Abstract: Nano-structured SnSb, SnSb–CNT, Si–SnSb and Si–SnSb–CNT alloys were synthesized from metal chlorides of Sn, Sb and Si via reductive co-precipitation technique using NaBH{sub 4} as reducing agent. The as prepared compounds were characterized by various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), Raman, Fourier transform infra-red (FTIR) and photoluminescence (PL) spectroscopy. The electrochemical performances of the compounds were characterized by galvanostatic cycling (GC) and cyclic voltammetry (CV). The Si–SnSb–CNT compound shows a high reversible capacity of 1200 mAh g{sup −1}. However, the rapid capacity fading was observed during cycling. In contrast, SnSb–CNT compound showed a high reversible capacity of 568 mAh g{sup −1} at 30th cycles with good cycling stability. The improved reversible capacity and cyclic performance of the SnSb–CNT compound could be attributed to the nanosacle dimension of SnSb particles and the structural advantage of CNTs.

  10. Phase transitions in thin films of Sn-Sb-Se system

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Abdalla Belal Adam; Yussof Wahab

    1998-01-01

    The preparation and formation of covalent ternary Sn-Sb-Se system were investigated. A solid state reaction technique was employed whereby the evaporated multilayers of Sn/Se/Sb/Sn reacted chemically at a fixed temperature of 240 o C and were allowed to a room temperature slow-cooling. X-ray diffraction analysis showed that phase changes occurred in the system, with indication of amorphization for the predicted Sn 9 .3Sb 8 .1Se 4 4.9 and Sn 1 3.2Sb 4 3.4Se 4 3.4 compositions. These enabled the preliminary topological phase transitions of Sn-Sb-Se system according to the Gibb's triangle in which the areas of crystalline-amorphous were located. (Author)

  11. Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

    International Nuclear Information System (INIS)

    Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

    2012-01-01

    A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

  12. Thermoelectric Properties of SnO2 Ceramics Doped with Sb and Zn

    DEFF Research Database (Denmark)

    Yanagiya, S.; Van Nong, Ngo; Xu, Jianxiao Jackie

    2011-01-01

    Polycrystalline SnO2-based samples (Sn0.97−x Sb0.03Zn x O2, x = 0, 0.01, 0.03) were prepared by solid-state reactions. The thermoelectric properties of SnO2 doped with Sb and Zn were investigated from 300 K to 1100 K. X-ray diffraction (XRD) analysis revealed all XRD peaks of all the samples...

  13. Yield of 117Sb, 118mSb, 120mSb, 122Sb, 124Sb in reactions Sn (p, xn)

    International Nuclear Information System (INIS)

    Dmitriev, P.P.; Konstantinov, I.O.

    1993-01-01

    Yield of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb from thick target depending on proton energy is measured. The maximum proton energy is 21.7±0.2 MeV. Antimony isotopes yield in separate reactions when irradiating of tin isotopes with 100% enrichment is determined using the method published earlier. The methods for production of 117 Sb, 118m Sb, 120m Sb, 122 Sb, 124 Sb with high radioisotope purity are shown. 13 refs., 1 fig., 3 tabs

  14. On possibility of superconductivity in SnSb: A first principle study

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta D. [Department of Physics, M. K. Bhavnagar University, Bhavnagar 364001 (India); Shrivastava, Deepika [Department of Physics, Barkatullah University, Bhopal 462026 (India); Jha, Prafulla K., E-mail: prafullaj@yahoo.com [Department of Physics, Faculty of Science, The M. S. University of Baroda, Vadodara 390002 (India); Sanyal, Sankar P. [Department of Physics, Barkatullah University, Bhopal 462026 (India)

    2016-09-15

    Highlights: • Superconducting property of SnSb is predicted by ab-initio calculations. • Electronic properties of SnSb in RS phase shows metallic behaviour similar to SnAs. • Phonon dispersion confirms the dynamical stability of SnSb in RS phase. • Superconducting transition temperature is 3.1 K, slightly lower than that of SnAs. • Calculated thermodynamic properties are also reported. - Abstract: The electronic, phonon structure and superconducting properties of tin antimonide (SnSb) in rock-salt (RS) structure are calculated using first-principles density functional theory. The electronic band structure and density of states show metallic behavior. The phonon frequencies are positive throughout the Brillouin zone in rock-salt structure indicating its stability in that phase. Superconductivity of SnSb in RS phase is discussed in detail by calculating phonon linewidths, Eliashberg spectral function, electron-phonon coupling constant and superconducting transition temperature. SnSb is found to have a slightly lower T{sub C} (3.1 K), as compared to SnAs.

  15. 0+ analogue state in 118Sb from 117Sn(p,nγ) reaction

    International Nuclear Information System (INIS)

    Pal, J.; Dey, C.C.; Bose, S.; Sinha, B.K.; Chatterjee, M.B.; Mahapatra, D.P.

    1996-01-01

    The analogue of the 0 + ground state in 118 Sn has been observed in the compound nucleus 118 Sb through 117 Sn(p,nγ) 117 Sb reaction. The neutron decays of this analogue resonance have been studied from the deexciting γ-rays of the residual nucleus 117 Sb. From off resonance excitation functions, spin assignments have been made to states in 117 Sb, on the basis of Hauser-Feshbach formalism. The resonance parameters of the isobaric analogue resonance have been determined, including the total, proton and neutron decay widths. (orig.)

  16. Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

    2015-06-01

    SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

  17. Photoemission of heavy fermion superconductor PrOs4Sb12 and other Pr compounds

    International Nuclear Information System (INIS)

    Imada, S.; Yamasaki, A.; Sekiyama, A.; Settai, R.; Onuki, Y.; Suga, S.; Sugawara, H.; Sato, H.; Ochiai, A.

    2004-01-01

    Full text: Strongly correlated electronic states due to Pr 4f electrons found in several Pr compounds have recently been attracting much attention. The Pr 4f electrons are much more localized than in Ce due to the lanthanoid contraction. Therefore, the number of the Pr systems that show strong electron correlation is much smaller than Ce systems. We will present a comparative study of Pr 4f electronic states in such systems as the heavy fermion superconductor PrOs 4 Sb 12 , the Kondo system PrSn 3 and the localized 4f systems Pr 4 X 3 (X = Sb and Bi). The Pr 4f electronic state was probed by means of the Pr 3d → 4f resonant photoemission (RPES). Because the kinetic energy (E K ) of the photoelectrons is as high as ∼ 900 eV, this method is much more bulk sensitive than the 4d → 4f RPES with E K ∼ 100 eV. The energy resolution could be set to about 100 meV by utilizing the soft X-rays from BL25SU in SPring-8 and the SCIENTA SES-200 analyzer. The Pr 4f excitation spectrum of PrSn 3 was found to show a very strong intensity at the Fermi level (E F ). This can be interpreted as the Kondo resonance which has been observed in the Kondo Ce and Yb compounds. In the Pr 4f spectrum of the heavy fermion superconductor PrOs 4 Sb 12 , the intensity at E F was smaller than in PrSn 3 . This clearly shows that the Kondo temperature (T K ) is much lower in PrOs 4 Sb 12 than in PrSn 3 . We have further found a strong excitation energy dependence in the RPES line shape. In the case of Pr 4 X 3 (X = Sb and Bi), the intensity at E B was much smaller than PrSn 3 and PrOs 4 Sb 12 , which is consistent with the localized character of Pr 4f electrons in Pr 4 X 3 . The Pr 4f spectra of these localized systems are qualitatively well reproduced by a cluster model calculation that takes into account the hybridization between the Pr 4f orbital and the conduction and valence bands made up by the X p and Pr 5d states

  18. Coherence Kondo gap in CeNiSn and CeRhSb

    International Nuclear Information System (INIS)

    Takabatake, T.; Nakamoto, G.; Tanaka, H.; Bando, Y.; Fujii, H.; Nishigori, S.; Goshima, H.; Suzuki, T.; Fujita, T.; Oguro, I.; Hiraoka, T.; Malik, S.K.

    1994-01-01

    CeNiSn and CeRhSb are Kondo-lattice compounds showing the behavior of a small-gap semiconductor at temperatures below 7 K. We review and discuss the magnetic, transport and specific-heat measurements performed on single crystals of CeNiSn and polycrystals of CeRhSb. Prerequisites for gap formation are deduced from the effects of substitution and application of a magnetic field and pressure on the gapped state. ((orig.))

  19. Sn-Sb-Se based binary and ternary alloys for phase change memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Kyung-Min

    2008-10-28

    In this work, the effect of replacing Ge by Sn and Te by Se was studied for a systematic understanding and prediction of new potential candidates for phase change random access memories applications. The temperature dependence of the electrical/structural properties and crystallization kinetics of the Sn-Se based binary and Sn-Sb-Se based ternary alloys were determined and compared with those of the GeTe and Ge-Sb-Te system. The temperature dependence of electrical and structural properties were investigated by van der Pauw measurements, X-ray diffraction, X-ray reflectometry. By varying the heating rate, the Kissinger analysis has been used to determine the combined activation barrier for crystallization. To screen the kinetics of crystallization, a static laser tester was employed. In case of binary alloys of the type Sn{sub x}Se{sub 1-x}, the most interesting candidate is SnSe{sub 2} since it crystallizes into a single crystalline phase and has high electrical contrast and reasonably high activation energy for crystallization. In addition, the SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloy system also might be sufficient for data retention due to their higher transition temperature and activation energy for crystallization in comparison to GeTe-Sb{sub 2}Te{sub 3} system. Furthermore, SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloys have a higher crystalline resistivity. The desired rapid crystallization speed can be obtained for Sn{sub 1}Sb{sub 2}Se{sub 5} and Sn{sub 2}Sb{sub 2}Se{sub 7} alloys. (orig.)

  20. Efficient photocatalytic degradation of phenol in aqueous solution by SnO2:Sb nanoparticles

    International Nuclear Information System (INIS)

    Al-Hamdi, Abdullah M.; Sillanpää, Mika; Bora, Tanujjal; Dutta, Joydeep

    2016-01-01

    Highlights: • Sb doped SnO 2 nanoparticles were synthesized using sol–gel process. • Photocatalytic degradation of phenol were studies using SnO 2 :Sb nanoparticles. • Under solar light phenol was degraded within 2 h. • Phenol mineralization and intermediates were investigated by using HPLC. - Abstract: Photodegradation of phenol in the presence of tin dioxide (SnO 2 ) nanoparticles under UV light irradiation is known to be an effective photocatalytic process. However, phenol degradation under solar light is less effective due to the large band gap of SnO 2 . In this study antimony (Sb) doped tin dioxide (SnO 2 ) nanoparticles were prepared at a low temperature (80 °C) by a sol–gel method and studied for its photocatalytic activity with phenol as a test contaminant. The catalytic degradation of phenol in aqueous media was studied using high performance liquid chromatography and total organic carbon measurements. The change in the concentration of phenol affects the pH of the solution due to the by-products formed during the photo-oxidation of phenol. The photoactivity of SnO 2 :Sb was found to be a maximum for 0.6 wt.% Sb doped SnO 2 nanoparticles with 10 mg L −1 phenol in water. Within 2 h of photodegradation, more than 95% of phenol could be removed under solar light irradiation.

  1. Efficient photocatalytic degradation of phenol in aqueous solution by SnO{sub 2}:Sb nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdi, Abdullah M., E-mail: Abdullah.Al.Hamdi@lut.fi [Laboratory of Green Chemistry, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Chemistry Department, Sultan Qaboos University, P.O. Box 17, 123 Al-Khoudh (Oman); Chair in Nanotechnology, Water Research Center, Sultan Qaboos University, P.O. Box 17, 123 Al-Khoudh (Oman); Sillanpää, Mika [Laboratory of Green Chemistry, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Bora, Tanujjal [Chair in Nanotechnology, Water Research Center, Sultan Qaboos University, P.O. Box 17, 123 Al-Khoudh (Oman); Dutta, Joydeep [Chair in Nanotechnology, Water Research Center, Sultan Qaboos University, P.O. Box 17, 123 Al-Khoudh (Oman); Functional Materials Division, ICT, KTH Royal Institute of Technology, Isafjordsgatan 22, SE-164 40 KistaStockholm (Sweden)

    2016-05-01

    Highlights: • Sb doped SnO{sub 2} nanoparticles were synthesized using sol–gel process. • Photocatalytic degradation of phenol were studies using SnO{sub 2}:Sb nanoparticles. • Under solar light phenol was degraded within 2 h. • Phenol mineralization and intermediates were investigated by using HPLC. - Abstract: Photodegradation of phenol in the presence of tin dioxide (SnO{sub 2}) nanoparticles under UV light irradiation is known to be an effective photocatalytic process. However, phenol degradation under solar light is less effective due to the large band gap of SnO{sub 2}. In this study antimony (Sb) doped tin dioxide (SnO{sub 2}) nanoparticles were prepared at a low temperature (80 °C) by a sol–gel method and studied for its photocatalytic activity with phenol as a test contaminant. The catalytic degradation of phenol in aqueous media was studied using high performance liquid chromatography and total organic carbon measurements. The change in the concentration of phenol affects the pH of the solution due to the by-products formed during the photo-oxidation of phenol. The photoactivity of SnO{sub 2}:Sb was found to be a maximum for 0.6 wt.% Sb doped SnO{sub 2} nanoparticles with 10 mg L{sup −1} phenol in water. Within 2 h of photodegradation, more than 95% of phenol could be removed under solar light irradiation.

  2. Interfacial Bonding Energy on the Interface between ZChSnSb/Sn Alloy Layer and Steel Body at Microscale

    Directory of Open Access Journals (Sweden)

    Jianmei Wang

    2017-09-01

    Full Text Available To investigate the performance of bonding on the interface between ZChSnSb/Sn and steel body, the interfacial bonding energy on the interface of a ZChSnSb/Sn alloy layer and the steel body with or without Sn as an intermediate layer was calculated under the same loadcase using the molecular dynamics simulation software Materials Studio by ACCELRYS, and the interfacial bonding energy under different Babbitt thicknesses was compared. The results show that the bonding energy of the interface with Sn as an intermediate layer is 10% larger than that of the interface without a Sn layer. The interfacial bonding performances of Babbitt and the steel body with Sn as an intermediate layer are better than those of an interface without a Sn layer. When the thickness of the Babbitt layer of bushing is 17.143 Å, the interfacial bonding energy reaches the maximum, and the interfacial bonding performance is optimum. These findings illustrate the bonding mechanism of the interfacial structure from the molecular level so as to ensure the good bonding properties of the interface, which provides a reference for the improvement of the bush manufacturing process from the microscopic point of view.

  3. Interfacial Bonding Energy on the Interface between ZChSnSb/Sn Alloy Layer and Steel Body at Microscale.

    Science.gov (United States)

    Wang, Jianmei; Xia, Quanzhi; Ma, Yang; Meng, Fanning; Liang, Yinan; Li, Zhixiong

    2017-09-25

    To investigate the performance of bonding on the interface between ZChSnSb/Sn and steel body, the interfacial bonding energy on the interface of a ZChSnSb/Sn alloy layer and the steel body with or without Sn as an intermediate layer was calculated under the same loadcase using the molecular dynamics simulation software Materials Studio by ACCELRYS, and the interfacial bonding energy under different Babbitt thicknesses was compared. The results show that the bonding energy of the interface with Sn as an intermediate layer is 10% larger than that of the interface without a Sn layer. The interfacial bonding performances of Babbitt and the steel body with Sn as an intermediate layer are better than those of an interface without a Sn layer. When the thickness of the Babbitt layer of bushing is 17.143 Å, the interfacial bonding energy reaches the maximum, and the interfacial bonding performance is optimum. These findings illustrate the bonding mechanism of the interfacial structure from the molecular level so as to ensure the good bonding properties of the interface, which provides a reference for the improvement of the bush manufacturing process from the microscopic point of view.

  4. Sb-SnO2-Nanosized-Based Resistive Sensors for NO2 Detection

    Directory of Open Access Journals (Sweden)

    T. Krishnakumar

    2009-01-01

    Full Text Available A study over Sb-promoted tin oxide nanopowders for sensing applications is reported. SnO2 nanopowders pure and promoted with 5 wt% of antimony were prepared by wet chemical methods and widely characterized by TEM, XRD, and XPS techniques. Thick film resistive sensors were fabricated by depositing the synthesized nanopowders by drop-coating on interdigited alumina substrates. The sensing characteristics of the pure SnO2 and Sb-promoted sensors for the monitoring of trace level of NO2 were studied. The response of the sensors to water vapor was also investigated, revealing that Sb acts favorably eliminating the interference of humidity.

  5. Lead-free soldering: Investigation of the Cu-Sn-Sb system along the Sn:Sb = 1:1 isopleth

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Y. [State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083 (China); Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Borzone, G., E-mail: borzone@chimica.unige.it [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy); Zanicchi, G.; Delsante, S. [Department of Chemistry and Industrial Chemistry, University of Genoa, INSTM UdR Genoa, Via Dodecaneso 31, I-16146 Genoa (Italy)

    2011-02-03

    Research highlights: > In the electronics industry, the solder alloys commonly used for assembly belong to the Sn-Pb system. Fulfilment of the EU RoHS (reduction of hazardous substances) requires the development of new lead-free alloys for applications in electronics, with the same or possibly better characteristics than the traditional Sn-Pb alloys. > This research concerns the investigation of the constitutional properties of the Cu-Sn-Sb system which is considered as lead-free replacement for high-temperature applications. - Abstract: The Cu-Sn-Sb system has been experimentally investigated by a combination of optical microscopy, differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). DSC was used to identify a total number of five invariant ternary reactions and the Sn:Sb = 1:1 isopleth section up to 65 at.% Cu was constructed by combining the DSC data with the EPMA analyses of annealed alloys and literature information. The composition limits of the binary phases were detected.

  6. Flake structured SnSbCo/MCMB/C composite as high performance anodes for lithium ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xiaoqiu [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Engineering Research Center of Materials and Technology for Electrochemical Energy Storage (Ministry of Education), Guangzhou 510006 (China); Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Guangdong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangzhou 510631 (China); Ru, Qiang, E-mail: rq7702@yeah.net [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Engineering Research Center of Materials and Technology for Electrochemical Energy Storage (Ministry of Education), Guangzhou 510006 (China); Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Guangdong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangzhou 510631 (China); Zhao, Doudou; Mo, Yudi; Hu, Shejun [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Engineering Research Center of Materials and Technology for Electrochemical Energy Storage (Ministry of Education), Guangzhou 510006 (China); Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Guangdong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangzhou 510631 (China)

    2015-10-15

    SnSbCo/MCMB/C composite with flake structure were prepared by stepwise synthesis method. Firstly, SnSbCo nanoparticles were fabricated by co-precipitation, and then nanosized SnSbCo alloy were embedded in mesocarbon microbeads (MCMB) by ball-milling to synthesize primitive SnSbCo/MCMB hybrids, followed by carbonization of phenolic resin to produce an outer layer of carbon coating. The crystal structure, morphology and electrochemical properties of the SnSbCo/MCMB/C composite were evaluated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and galvanostatical cycling tests. Compared with bare SnSbCo alloy and SnSbCo/MCMB hybrids, the efficiently enhanced electrochemical performance of SnSbCo/MCMB/C composite were mainly ascribed to the improved electron conductivity and volume buffering effect provided by the amorphous carbon coating. The resultant SnSbCo/MCMB/C composite delivered an initial discharge capacity of 848 mAh g{sup −1} under 100 mA g{sup −1}, with a good capacity retention of 85.6% after 70 cycles. The composite also exhibited excellent rate capability of 603 mAh g{sup −1} and 405 mAh g{sup −1} at the current density of 200 mA g{sup −1} and 1000 mA g{sup −1}, respectively. - Highlights: • Flake structured SnSbCo/MCMB/C composite have been prepared by stepwise synthesis method. • SnSbCo/MCMB/C composite show good cycle performance and rate capability. • Using both MCMB and phenolic resin as dual carbon sources.

  7. Wetting Behavior of Ternary Au-Ge-X (X = Sb, Sn) Alloys on Cu and Ni

    Science.gov (United States)

    Jin, S.; Valenza, F.; Novakovic, R.; Leinenbach, C.

    2013-06-01

    Au-Ge-based alloys are potential substitutes for Pb-rich solders currently used for high-temperature applications. In the present work, the wetting behavior of two Au-Ge-X (X = Sb, Sn) ternary alloys, i.e., Au-15Ge-17Sb and Au-13.7 Ge-15.3Sn (at.%), in contact with Cu and Ni substrates has been investigated. Au-13.7Ge-15.3Sn alloy showed complete wetting on both Cu and Ni substrates. Total spreading of Au-15Ge-17Sb alloy on Cu was also observed, while the final contact angle of this alloy on Ni was about 29°. Pronounced dissolution of Cu substrates into the solder alloys investigated was detected, while the formation of Ni-Ge intermetallic compounds at the interface of both solder/Ni systems suppressed the dissolution of Ni into the solder.

  8. Preparation of PtSnSb/C electrocatalizers for the electro-oxidation of the ethanol; Preparacao de eletrocatalizadores PtSnSb/C para a eletrooxidacao do etanol

    Energy Technology Data Exchange (ETDEWEB)

    Tusi, M.M.; Ayoub, J.M.S.; Costa, T.C.; Spinace, E.V.; Neto, A.O., E-mail: aolivei@ipen.b, E-mail: espinace@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2010-07-01

    PtSn/C (Pt:Sn atomic ratio of 50:50) and PtSnSb/C (Pt:Sn:Sb atomic ratio of 50:45:05, 50:40:10 and 50:10:40) electrocatalysts were prepared (20 wt% metal loading) by an alcohol-reduction process using ethylene glycol as reducing agent, H{sub 2}PtCl{sub 6}.6H{sub 2}O, SnCl{sub 2}.H{sub 2}O and Sb(OOCCH{sub 3}){sub 3} and carbon Vulcan XC72 as support. The obtained materials were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and chronoamperometry. The PtSnSb/C (50:45:05) prepared by an alcohol-reduction process showed the best performance for ethanol electro-oxidation compared to the others catalysts. (author)

  9. Graphene supported Sn-Sb rate at carbon core-shell particles as a superior anode for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shuangqiang; Chen, Peng; Wang, Yong [Department of Chemical Engineering, School of Environmental and Chemical Engineering, Shanghai University (China); Wu, Minghong; Pan, Dengyu [Institute of Nanochemistry and Nanobiology, Shanghai Univ. (China)

    2010-10-15

    This paper reports the preparation and Li-storage properties of graphene nanosheets(GNS), GNS supported Sn-Sb rate at carbon (50-150 nm) and Sn-Sb nanoparticles (5-10 nm). The best cycling performance and excellent high rate capabilities were observed for GNS-supported Sn-Sb rate at carbon core-shell particles, which exhibited initial capacities of 978, 850 and 668 mAh/g respectively at 0.1C, 2C and 5C (1C = 800 mA/g) with good cyclability. Besides the GNS support, the carbon skin around Sn-Sb particles is believed to be a key factor to improve electrochemical properties of Sn-Sb. (author)

  10. GaSb grown from Sn solvent at low temperatures by LPE

    Energy Technology Data Exchange (ETDEWEB)

    Compean, V H; Anda, F de; Mishurnyi, V A; Gorbatchev, A Yu, E-mail: fdeanda@cactus.iico.uaslp.m [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico)

    2009-05-01

    The LPE growth of GaSb using Sn as a solvent has been studied in the temperature range 250-370 C and using liquid solutions covering a wide range of compositions. In order to find the growth conditions the phase diagram has been determined experimentally around the same temperature region. It is shown the Sn incorporates into the grown layers and that it behaves as an acceptor. The photoluminescence spectra of the grown layers with different Sn contents show characteristic peaks that can be attributed to different recombination processes.

  11. Experimental investigation and thermodynamic description of the In-Sb-Sn ternary system

    Czech Academy of Sciences Publication Activity Database

    Manasijevič, D.; Vřešťál, J.; Minic, D.; Kroupa, Aleš; Zivkovic, D.; Zivkovic, Z.

    2008-01-01

    Roč. 450, 1-2 (2008), s. 193-199 ISSN 0925-8388 R&D Projects: GA MŠk(CZ) OC08053 Institutional research plan: CEZ:AV0Z20410507 Keywords : In-Sb-Sn system * phase diagram * CALPHAD Subject RIV: BJ - Thermodynamics Impact factor: 1.510, year: 2008

  12. Preparation and Performance of Sb-SnO2 / Ti Electrode Modified with Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    WEI Jin-zhi

    2017-06-01

    Full Text Available In order to improve the electro-catalytic oxidation activity and stability of Sb-SnO2 /Ti electrode,the CNTs-Sb-SnO2 /Ti electrode was prepared by sol-gel-thermal decomposition method. The microstructure and electrochemical properties of the modified electrode was characterized via SEM electrochemical impedance spectroscope ( EIS ,polarization curve and congo red degradation experiments. Furthermore,its the stability was investigated by accelerated life test. The results indicate that when the optimal doping amount of CNTs is 2. 0 g /L the congo red removal rate increases by 14. 7% using the CNTs-Sb-SnO2 /Ti electrode compared with the Sb-SnO2 /Ti electrode. Meanwhile pore structure appears and roughness increases on the surface of modified electrodes leading to larger specific surface area of electrode. Then the modified electrodes exhibit higher oxygen evolution potential and lower charge transfer resistance. Additionally,accelerated life tests reveal that the modified electrode has better electro-catalytic stability while the service life increases by

  13. Morphology and Hardness Improvement of Lead Bearing Alloy through Composite Production: 75Pb-15Sb-10Sn/ 15% V/V SiO2 Particulate Composite

    Directory of Open Access Journals (Sweden)

    Linus Okon ASUQUO

    2013-06-01

    Full Text Available The morphology and hardness improvement of lead bearing alloy through composite production: 75Pb-15Sb-10Sn/ 15%v/v SiO2 particulate composite, was studied. 75Pb-15Sb-10Sn white bearing alloy produced at the foundry shop of National Metallurgical Development Centre Jos was used for the production of the composite using stir-cast method. The reinforcing agent was 63 microns passing particles of silica. This was produced from pulverizing quartz using laboratory ball mill. The specimens of the composite produced were then subjected to metallographic to study the morphology of the structures produced both in the as cast and aged conditions of the composite. The samples were also tested for hardness and the result showed that the as cast composite had a hardness value of 33 HRB which is an improvement over the hardness value of 27.7 HRB for the 75Pb-15Sb-10Sn alloy which was used for the production of the composite. The effect of age hardening on the produced composite was also investigated; the result showed that the maximum hardness of 34 HRB was obtained after ageing for 3 hours. The micrographs revealed inter-metallic compound SbSn, eutectic of two solid solutions-one tin-rich and the other lead-rich, reinforcing particles, and solid solution of β. The results revealed that particle hardening can be used to improve the hardness of 75Pb-15Sb-10Sn white bearing alloy for use as heavy duty bearing material.

  14. Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

  15. Maximization of current efficiency for organic pollutants oxidation at BDD, Ti/SnO2-Sb/PbO2, and Ti/SnO2-Sb anodes.

    Science.gov (United States)

    Xing, Xuan; Ni, Jinren; Zhu, Xiuping; Jiang, Yi; Xia, Jianxin

    2018-08-01

    Whereas electrochemical oxidation is noted for its ability to degrade bio-refractory organics, it has also been incorrectly criticized for excessive energy consumption. The present paper rectifies this misunderstanding by demonstrating that the energy actually consumed in the degradation process is much less than that wasted in the side reaction of oxygen evolution. To minimize the side reaction, the possible highest instantaneous current efficiency (PHICE) for electrochemical oxidation of phenol at Boron-doped Diamond (BDD), Ti/SnO 2 -Sb/PbO 2 (PbO 2 ), and Ti/SnO 2 -Sb (SnO 2 ) anodes has been investigated systematically, and found to reach almost 100% at the BDD anode compared with 23% at the PbO 2 anode and 9% at the SnO 2 anode. The significant discrepancy between PHICE values at the various anodes is interpreted in terms of different existing forms of hydroxyl radicals. For each anode system, the PHICEs are maintained experimentally using a computer-controlled exponential decay current mode throughout the electrolysis process. For applications, the minimized energy consumption is predicted by response surface methodology, and demonstrated for the BDD anode system. Consequently, almost 100% current efficiency is achieved (for a relatively meagre energy consumption of 17.2 kWh kgCOD -1 ) along with excellent COD degradation efficiency by optimizing the initial current density, flow rate, electrolysis time, and exponential decay constant. Compared with galvanostatic conditions, over 70% of the energy is saved in the present study, thus demonstrating the great potential of electrochemical oxidation for practical applications. Copyright © 2018 Elsevier Ltd. All rights reserved.

  16. Preparation of the Wire of ZChSnSb11-6 Used for Remanufacturing Thermal Spraying

    Science.gov (United States)

    Zhang, B.; Yang, Z. Y.; Fu, D. X.; Li, X. F.; Chen, W.

    Tin base Babbitt alloy widely used in bearing bush production and repair, the performance of ZChSnSb11-6 is better than ZChSnSb8-4.But as a result of as-cast structure of ZChSnSb11-6 is rich in big hard phase, its processing performance is bad, in this paper, through the optimization of smelting, casting, extrusion, drawing and other processes we have been successfully prepared ZChSnSb11-6 wire suitable for thermal spraying. Through metallographic examination, micro hardness, bond strength and porosity testing, it was proved that the wire meet the requirements of bearing manufacturing thermal spraying.

  17. Synthesis and electrochemical characteristics of Sn-Sb-Ni alloy composite anode for Li-ion rechargeable batteries

    International Nuclear Information System (INIS)

    Guo Hong; Zhao Hailei; Jia Xidi; Qiu Weihua; Cui Fenge

    2007-01-01

    Micro-scaled Sn-Sb-Ni alloy composite was synthesized from oxides of Sn, Sb and Ni via carbothermal reduction. The phase composition and electrochemical properties of the Sn-Sb-Ni alloy composite anode material were studied. The prepared alloy composite electrode exhibits a high specific capacity and a good cycling stability. The lithiation capacity was 530 mAh g -1 in the first cycle and maintained at 370-380 mAh g -1 in the following cycles. The good electrochemical performance may be attributed to its relatively large particle size and multi-phase characteristics. The former reason leads to the lower surface impurity and thus the lower initial capacity loss, while the latter results in a stepwise lithiation/delithiation behavior and a smooth volume change of electrode in cycles. The Sn-Sb-Ni alloy composite material shows a good candidate anode material for the rechargeable lithium ion batteries

  18. Precise measurement of the densities of liquid Bi, Sn, Pb and Sb

    International Nuclear Information System (INIS)

    Wang Lianwen; Wang Qiang; Xian Aiping; Lu Kunquan

    2003-01-01

    The densities of liquid Bi, Sn, Pb and Sb have been precisely measured from the melting point up to about 1100 K using an improved Archimedean method. The densities at the melting point for liquid Bi, Sn, Pb and Sb are 10.042 x 10 3 , 6.983 x 10 3 , 10.635 x 10 3 and 6.454 x 10 3 kg m -3 , respectively. Comparisons between our data and those from the literature have been made and they show the present results to be more reliable. Rather than a linear fit for the temperature dependence of the density, a slight deviation from linearity in the temperature dependence of the densities has been observed

  19. Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

    2014-09-07

    In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

  20. Systematic features of the structure of the heavy odd-mass Sb nuclides near the N = 82 closed shell

    International Nuclear Information System (INIS)

    Stone, C.A.; Robertson, J.D.; Faller, S.H.; Mantica, P.F.; Zimmerman, B.E.; Chung Chien; Walters, W.B.

    1995-01-01

    New data for the decay of 4.1 min 3/2 + 127 Sn to levels of 127 Sb, decay of 2.2 min 3/2 + 129 Sn to levels of 12 Sb and decay of ∼60 s 3/2 + 131 Sn to levels of 131 Sb are presented. The shift in level positions arising from the monopole interaction and core phonon structure as well as changes in beta decay patterns are discussed. (orig.)

  1. Surface properties and wetting behavior of liquid Ag-Sb-Sn alloys

    Directory of Open Access Journals (Sweden)

    Sklyarchuk V.

    2012-01-01

    Full Text Available Surface tension and density measurements of liquid Ag-Sb-Sn alloys were carried out over a wide temperature range by using the sessile drop method. The surface tension experimental data were analyzed by the Butler thermodynamic model in the regular solution approximation. The wetting characteristics of these alloys on Cu and Ni substrates have been also determined. The new experimental results were compared with the calculated values as well as with data available in the literature.

  2. Effect of SbSn additions on the physical characterization of amorphous Se

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Rahim, Farid M., E-mail: farid.elkhateb@gmail.com [Physics Department, Faculty of Science, Al-Azhar, University, Assiut Branch, Assiut (Egypt); Physics Department, Faculty of Science and Arts, Khulais, King Abdulaziz University (KAU) (Saudi Arabia); Aly, K.A., E-mail: Kamalaly2001@gmail.com [Physics Department, Faculty of Science, Al-Azhar, University, Assiut Branch, Assiut (Egypt); Physics Department, Faculty of Science and Arts, Khulais, King Abdulaziz University (KAU) (Saudi Arabia); Dahshan, A. [Department of Physics, Faculty of Science, Port Said, University, Port Said (Egypt); Physics Department - Faculty of Girls - King Khalid University, Abha (Saudi Arabia)

    2011-08-15

    Highlights: {yields} The present work deals with the incorporation the optical properties of amorphous Se with SbSn. {yields} High accuracy determination of the film thickness and the complex index of refraction. {yields} The allowed non-direct electronic transitions are mainly responsible for the photon absorption in the investigated films. {yields} The changes in the refractive index were discussed in terms of the single-oscillator model (Wemple-DiDomenico relationship). {yields} The obtained results were discussed in terms of the chemical-bond approach. - Abstract: Different compositions of Se{sub 100-x}(SbSn){sub x} (0 {<=} x {<=} 14 at.%) glasses were prepared by the well-known melt quench technique. Thin films of these glasses were prepared by thermal evaporation onto ultrasonic cleaned glass substrate. Transmittance spectra of these films were measured in the wavelength range 400-2500 nm by using Jasco double beam spectrophotometer. A straight forward analysis proposed by Swanepoel, based on the maxima and minima of the transmittance spectra, allows to accurate determination of the film thickness and the complex index of refraction. Increasing SbSn content at the expense of Se atoms is found to affect the refractive index and the extinction coefficient of these films. The refractive indexes were discussed in terms of the single-oscillator Wemple-DiDomenico model. The compositional dependence of the optical band gap for the Se{sub 100-x}(SbSn){sub x} (0 {<=} x {<=} 14 at.%) thin films is discussed in terms of the chemical-bond approach.

  3. Theoretical prediction of thermodynamic activities of liquid Au-Sn-X (X=Bi, Sb, Zn) solder systems

    Energy Technology Data Exchange (ETDEWEB)

    Awe, O.E., E-mail: draweoe2004@yahoo.com [Department of Physics, University of Ibadan, Ibadan (Nigeria); Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife (Nigeria); Oshakuade, O.M. [Department of Physics, University of Ibadan, Ibadan (Nigeria)

    2017-02-15

    Molecular interaction volume model has been theoretically used to predict the thermodynamic activities of tin in Au-Sn-Bi and Au-Sn-Sb and the thermodynamic activity of zinc in Au-Sn-Zn at experimental temperatures 800 K, 873 K and 973 K, respectively. On the premise of agreement between the predicted and experimental values, we predicted the activities of the remaining two components in each of the three systems. This prediction was extended from three cross-sections to five cross-sections, and to temperature range 400–600 K, relevant for applications. Iso-activities were plotted. Results show that addition of tin reduces the tendency for chemical short range order in both Au-Sb and Au-Zn systems, while addition of gold and bismuth, respectively, reduce the tendency for chemical short range order in Sn-Sb and Au-Sn systems. Also, we found that, in the desired high-temperature region for applications, while a combination of chemical order and miscibility of components exist in both Au-Sn-Bi and Au-Sn-Zn systems, only chemical order exist in the Au-Sn-Sb system. Results, further show that increase in temperature reduces the phase separation tendency in Au-Sn-Bi system.

  4. Preparation and characterization of Ti/SnO2-Sb electrode with copper nanorods for AR 73 removal

    International Nuclear Information System (INIS)

    Xu, Li; Li, Ming; Xu, Wei

    2015-01-01

    Novel Ti/Cu-NRs/SnO 2 -Sb electrode modified by copper (Cu) nanorods was fabricated through anodic aluminum oxide (AAO) template assisted electrochemical deposition (ECD) for wastewater treatment. Scanning electron microscopy (SEM), energy dispersive X-ray (EDX), X-ray diffraction (XRD) and electrochemical methods such as linear sweep voltammetry (LSV), cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were used to characterize the surface morphology, crystal structure and electrochemical performance of the electrodes. Acid dye AR 73 was selected as target pollutants to investigate the electro-catalyst behavior, and UV/vis spectroscopy was used to monitor the concentration changes with time. The results indicated that the presence of Cu nanorods on the Ti substrate promoted the electrodes' property obviously. Ti/Cu-NRs/SnO 2 -Sb anode possessed smaller charge transfer resistance and longer service life than Ti/SnO 2 -Sb anode. The oxygen evolution potential (OEP) of Ti/Cu-NRs/SnO 2 -Sb electrodes reach 2.17 V (vs. Ag/AgCl). Removal of pollutants and reaction rate were all promoted due to the introduction of Cu nanorods in the process of AR 73 decomposing with Ti/Cu-NRs/SnO 2 -Sb electrodes. And specific energy consumption also reduced remarkably. Our study has shown that the fabricated Ti/Cu-NRs/SnO 2 -Sb electrodes are very promising for the electrochemical treatment of wastewater

  5. Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

    Science.gov (United States)

    Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

    2016-12-01

    In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

  6. Luminescence studies on Sb3+ co-doped Y2Sn2O7: Tb nanoparticles

    International Nuclear Information System (INIS)

    Nigam, Sandeep; Sudarsan, V.; Vatsa, R.K.

    2008-01-01

    Pyrochlore-type oxides (A 2 B 2 O 7 ) have emerged as important host matrices for lanthanide doped luminescent materials due to their good thermal stability. Due to the higher symmetry around the A and B cations in the lattice lanthanide ions like Eu 3+ and Tb 3+ when incorporated at the A or B sites give very poor luminescence. One way to circumvent this problem is to incorporate ions like Sb 3+ or Bi 3+ in the lattice so that the lattice get distorted and luminescent intensity from the lanthanide ions increases. The present study deals with the synthesis and characterisation of Sb 3+ co-doped Y 2 Sn 2 O 7 :Tb nanoparticles prepared by the hydrolysis of Y 3+ , Sn 4+ , Tb 3+ and Sb 3+ in ethylene glycol medium followed by heating at 700 deg C for 4 hours. From XRD studies it is confirmed that as prepared sample is amorphous and heat treatment at 700 deg C results in the formation of highly crystalline Y 2 Sn 2 O 7 phase having pyrochlore structure

  7. Porous carbon-free SnSb anodes for high-performance Na-ion batteries

    Science.gov (United States)

    Choi, Jeong-Hee; Ha, Choong-Wan; Choi, Hae-Young; Seong, Jae-Wook; Park, Cheol-Min; Lee, Sang-Min

    2018-05-01

    A simple melt-spinning/chemical-etching process is developed to create porous carbon-free SnSb anodes. Sodium ion batteries (SIBs) incorporating these anodes exhibit excellent electrochemical performances by accomodating large volume changes during repeated cycling. The porous carbon-free SnSb anode produced by the melt-spinning/chemical-etching process shows a high reversible capacity of 481 mAh g-1, high ICE of 80%, stable cyclability with a high capacity retention of 99% after 100 cycles, and a fast rate capability of 327 mAh g-1 at 4C-rate. Ex-situ X-ray diffraction and high resolution-transmission electron microscopy analyses demonstrate that the synthesized porous carbon-free SnSb anodes involve the highly reversible reaction with sodium through the conversion and recombination reactions during sodiation/desodiation process. The novel and simple melt-spinning/chemical-etching synthetic process represents a technological breakthrough in the commercialization of Na alloy-able anodes for SIBs.

  8. The influence of annealing atmosphere on the material properties of sol-gel derived SnO2:Sb films before and after annealing

    International Nuclear Information System (INIS)

    Jeng, Jiann-Shing

    2012-01-01

    SnO 2 films with and without Sb doping were prepared by the sol-gel spin-coating method. Material properties of the SnO 2 films with different Sb contents were investigated before and after annealing under O 2 or N 2 . When SnO 2 films are annealed under N 2 or O 2 , the resistivity decreases with increasing annealing temperature, which may be related to the increased crystallinity and reduced film defects. The intensity of SnO 2 peaks for both O 2 - and N 2 -annealed films increases as the annealing temperature increases. Small nodules are revealed on the surface of SnO 2 films after annealing in N 2 or O 2 atmospheres, and some voids are present on the surface of N 2 -annealed SnO 2 films. After doping with Sb, the resistivity of SnO 2 films after annealing in O 2 is greater than that of N 2 -annealed SnO 2 films. The surface morphology of SnO 2 films incorporating different molar ratios of Sb after annealing are similar to that of as-spun SnO 2 films with adding Sb. There were no voids found on the surfaces of N 2 -annealed SnO 2 :Sb films. In addition, the peak intensity of SnO 2 :Sb films after O 2 -annealing is higher than those films after N 2 -annealing. The chemical binding states and Hall mobility of the high-temperature annealed SnO 2 films without and with adding Sb are also related to the annealing atmospheres. This study discusses the connection among the material properties of the SnO 2 films with different Sb contents and how these properties are influenced by the Sb-doping concentration and the annealing atmospheres of SnO 2 films.

  9. Multilayer SnSb4-SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability.

    Science.gov (United States)

    Liu, Ruirui; Zhou, Xiao; Zhai, Jiwei; Song, Jun; Wu, Pengzhi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-08-16

    A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb 4 -SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the Sb 2 Se 3 phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb 4 -SbSe thin film.

  10. Enhancing electrocatalytic performance of Sb-doped SnO ₂ electrode by compositing nitrogen-doped graphene nanosheets.

    Science.gov (United States)

    Duan, Tigang; Wen, Qing; Chen, Ye; Zhou, Yiding; Duan, Ying

    2014-09-15

    An efficient Ti/Sb-SnO2 electrode modified with nitrogen-doped graphene nanosheets (NGNS) was successfully fabricated by the sol-gel and dip coating method. Compared with Ti/Sb-SnO2 electrode, the NGNS-modified electrode possesses smaller unite crystalline volume (71.11Å(3) vs. 71.32Å(3)), smaller electrical resistivity (13Ωm vs. 34Ωm), and lower charge transfer resistance (10.91Ω vs. 21.01Ω). The accelerated lifetime of Ti/Sb-SnO2-NGNS electrode is prolonged significantly, which is 4.45 times as long as that of Ti/Sb-SnO2 electrode. The results of X-ray photoelectron spectroscopy measurement and voltammetric charge analysis indicate that introducing NGNS into the active coating can increase more reaction active sites to enhance the electrocatalytic efficiency. The electrochemical dye decolorization analysis demonstrates that Ti/Sb-SnO2-NGNS presents efficient electrocatalytic performance for methylene blue and orange II decolorization. And its pseudo-first order kinetic rate constants for methylene blue and orange II decolorization are 36.6 and 44.0 min(-1), respectively, which are 6.0 and 7.1 times as efficient as those of Ti/Sb-SnO2, respectively. Considering the significant electrocatalytic activity and low resistivity of Ti/Sb-SnO2-NGNS electrode, the cost of wastewater treatment can be expected to be reduced obviously and the application prospect is broad. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Thermoelectric study of Ag doped SnSe-Sb2Se3 based alloy

    Science.gov (United States)

    Das, Anish; Talukdar, M.; Kumar, Aparabal; Sarkar, Kalyan Jyoti; Dhama, P.; Banerji, P.

    2018-05-01

    In this article we have synthesized p-type alloy of SnSe and Sb2Se3 (10 atomic %) to study the thermoelectric transport properties. The alloy was prepared by melt grown technique followed by spark plasma sintering and latter doped with 2 atomic % Ag to compensate the carrier density in order to achieve higher electrical conductivity (σ). Out of these, the doped sample resulted in the maximum figure of merit, ZT˜0.7 at 773 K due to the existence of the secondary phase AgSbSe2 and reduced lattice thermal conductivity (0.61 W m-1 K-1 at 300 K). The fitted lattice thermal conductivity shows that point defect and Umklapp scattering are the primary process of phonon scattering for all the samples whereas the fitted mobility data confirms acoustic phonon scattering along with point defect and grain boundary scattering to be the main carrier scattering mechanism. More over room temperature carrier density and electrical conductivity are found to increase for the doped sample which further corroborate (90%)SnSe-(10%)Sb2Se3:2%Ag to be a potential candidate for highly efficient thermoelectric materials.

  12. Identification of shell-model states in $^{135}$Sb populated via $\\beta^{-}$ decay of $^{135}$Sn

    CERN Document Server

    Shergur, J; Brown, B A; Cederkäll, J; Dillmann, I; Fraile-Prieto, L M; Hoff, P; Joinet, A; Köster, U; Kratz, K L; Pfeiffer, B; Walters, W B; Wöhr, A

    2005-01-01

    The $\\beta$- decay of $^{135}$Sn was studied at CERN/ISOLDE using a resonance ionization laser ion source and mass separator to achieve elemental and mass selectivity, respectively. $\\gamma$-ray singles and $\\gamma\\gamma$ coincidence spectra were collected as a function of time with the laser on and with the laser off. These data were used to establish the positions of new levels in $^{135}$Sb, including new low-spin states at 440 and 798 keV, which are given tentative spin and parity assignments of 3/2$^{+}$ and 9/2$^{+}$, respectively. The observed levels of $^{135}$Sb are compared with shell-model calculations using different single-particle energies and different interactions.

  13. Incorporation of sol-gel SnO2:Sb into nanoporous SiO2

    International Nuclear Information System (INIS)

    Canut, B.; Blanchin, M.G.; Ramos-Canut, S.; Teodorescu, V.; Toulemonde, M.

    2006-01-01

    Silicon oxide films thermally grown on Si(1 0 0) wafers were irradiated with 200 MeV 197 Au ions in the 10 9 -10 1 cm -2 fluence range. The targets were then etched at room temperature in aqueous HF solution (1 vol.%) for various durations. Atomic force microscopy (AFM) in the tapping mode was used to probe the processed surfaces. Conical holes with a low size dispersion were evidenced. Their surface diameter varies between 20 and 70 nm, depending on the etching time. Sol-gel dip coating technique, associated with a further annealing treatment performed at 500 o C for 15 min, was used to fill the nanopores created in SiO 2 with a transparent conductive oxide (SnO 2 doped with antimony). Transmission electron microscopy (TEM) performed on cross-sectional specimen showed that SnO 2 :Sb crystallites of ∼5 nm mean size are trapped in the holes without degrading their geometry

  14. Synthesis and electrochemical performances of amorphous carbon-coated Sn Sb particles as anode material for lithium-ion batteries

    Science.gov (United States)

    Wang, Zhong; Tian, Wenhuai; Liu, Xiaohe; Yang, Rong; Li, Xingguo

    2007-12-01

    The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles. The as-prepared composite materials show much improved electrochemical performances as anode materials for lithium-ion batteries compared with Sn-Sb alloy and carbon alone. This amorphous carbon-coated Sn-Sb particle is extremely promising anode materials for lithium secondary batteries and has a high potentiality in the future use.

  15. Synthesis and electrochemistry properties of Sn-Sb ultrafine particles as anode of lithium-ion batteries

    International Nuclear Information System (INIS)

    Wang, Zhong; Tian, Wenhuai; Li, Xingguo

    2007-01-01

    Ultrafine particles of Sn-Sb alloys with different chemical composition have been prepared by hydrogen plasma-metal reaction. Structure, morphology, size and chemical composition of the Sn-Sb ultrafine particles were investigated by transmission electron microscopy, X-ray diffraction, BET gas adsorption, and induction-coupled plasma spectroscopy. It was found that all the particles have spherical shapes, with average particle size in the range of 100-300 nm. The electrochemistry properties as an alternative anode material for lithium-ion batteries have been characterized by constant current cycling and cyclic voltammetry. Electrochemical measurements showed that the alloys with Sn-46.5 at.% Sb have best reversible capacity and capacity retention. It exhibited a high reversible lithium-ion storage capacity of 701 mAh g -1 in the initial cycle, which has remained at 81% (i.e., 566 mAh g -1 ) of its original capacity after 20 cycles

  16. Electrochemical Degradation of Rhodamine B over Ti/SnO2-Sb Electrode.

    Science.gov (United States)

    Maharana, Dusmant; Niu, Junfeng; Gao, Ding; Xu, Zesheng; Shi, Jianghong

    2015-04-01

    Electrochemical degradation of rhodamine B (C28H31ClN2O3) over Ti/SnO2-Sb anode was investigated in a rectangular cell. The degradation reaction follows pseudo-first-order kinetics. The degradation efficiency of rhodamine B attained >90.0% after 20 minutes of electrolysis at initial concentrations of 5 to 200 mg/L at a constant current density of 20 mA/cm2 with a 10 mmol/L Na2SO4 supporting electrolyte solution. Rhodamine B (50 mg/L) degradation and total organic carbon (TOC) removal ratio achieved 99.9 and 86.7%, respectively, at the optimal conditions after 30 minutes of electrolysis. The results showed that the energy efficiency of rhodamine B (50 mg/L) degradation at the optimal current densities from 2 to 30 mA/cm2 were 23.2 to 84.6 Wh/L, whereas the electrolysis time for 90% degradation of rhodamine B with Ti/SnO2-Sb anode was 36.6 and 7.3 minutes, respectively. The electrochemical method can be an advisable option for the treatment of dyes such as rhodamine B in wastewater.

  17. Determination of the enthalpy of fusion and thermal diffusivity for ternary Cu_6_0_−_xSn_xSb_4_0 alloys

    International Nuclear Information System (INIS)

    Zhai, W.; Zhou, K.; Hu, L.; Wei, B.

    2016-01-01

    Highlights: • The increasing Sn content reduces the liquidus temperature. • High Sn content results in lower enthalpy of fusion by polynomial functions. • The thermal diffusivity drops from the solid toward the semi-solid state. • Undercoolability of alloys with primary Cu_2Sb phase is stronger than others. - Abstract: The liquidus and solidus temperatures, enthalpy of fusion, and the temperature dependence of thermal diffusivity for ternary Cu_6_0_−_xSn_xSb_4_0 alloys were systematically measured by DSC and laser flash methods. It is found that both the liquidus temperature and the enthalpy of fusion decrease with the rise of Sn content, and their relationships with alloy composition were established by polynomial functions. The thermal diffusivity usually drops from the solid toward the semi-solid state. The undercoolability of those liquid Cu_6_0_−_xSn_xSb_4_0 alloys with primary Cu_2Sb solid phase is stronger than the others with primary β(SnSb) intermetallic compound, and the increase of cooling rate facilitates further undercooling. Microstructural observation indicates that both of the primary Cu_2Sb and β(SnSb) intermetallic compounds in ternary Cu_6_0_−_xSn_xSb_4_0 alloys grow in faceted mode, and develop into coarse flakes and polygonal blocks.

  18. Superlattice-like SnSb{sub 4}/Ga{sub 3}Sb{sub 7} thin films for ultrafast switching phase-change memory application

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yifeng [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Jiangsu University of Technology, School of Mathematics and Physics, Changzhou (China); He, Zifang; Zhai, Jiwei [Tongji University, Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Shanghai (China); Wu, Pengzhi; Lai, Tianshu [Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technology, Department of Physics, Guangzhou (China); Song, Sannian; Song, Zhitang [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

    2015-11-15

    The carrier concentration of Sb-rich phase SnSb{sub 4}, Ga{sub 3}Sb{sub 7} and superlattice-like [SnSb{sub 4}(3.5 nm)/Ga{sub 3}Sb{sub 7}(4 nm)]{sub 7} (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson-Mehl-Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. (orig.)

  19. Formation of high-conductivity regions in SnO2-AOx (A - Ti4+, Zr4+, Sb3+, Sb5+) films exposed to ultraviolet radiation of H2

    International Nuclear Information System (INIS)

    Postovalova, G.G.; Roginskaya, Yu.E.; Zav'yalov, S.A.; Galyamov, B.Sh.; Klimasenko, N.L.

    2000-01-01

    Composition, structure and electron properties of SnO 2 films doped by Ti, Zr and Sb oxides were studied. The doped SnO 2 films were determined to contain nano-regions of SnO 2 base crystalline solid solutions and amorphous SnO 2 containing Sn 2+ or Sb 3+ ions and residing at the surface of crystallites or between them. These composition and structure peculiarities affect essentially both electron structure and electrical properties of films. Localized 5s-states of the conductivity range diffused boundary of amorphous SnO 2 partially filled with 5s-electrons of Sn 2+ or Sb 3+ ions serving as traps capture free electrons in the crystalline ranges and motivate high resistance of films [ru

  20. Nanostructured 3D-porous graphene hydrogel based Ti/Sb-SnO2-Gr electrode with enhanced electrocatalytic activity.

    Science.gov (United States)

    Asim, Sumreen; Zhu, Yunqing; Rana, Masud; Yin, Jiao; Shah, Muhammad Wajid; Li, Yingxuan; Wang, Chuanyi

    2017-02-01

    Nanostructured highly porous 3D-Ti/Sb-SnO 2 -Gr electrode, based on 3D porous graphene hydrogel was fabricated via a fast-evaporation technique through layer by layer (LBL) deposition. The 3D pores are uniformly distributed on the high fidelity of substrate with pore sizes of 7-12 nm, as confirmed by SEM analysis. Compared to Ti/Sb-SnO 2 electrode, the fabricated 3D porous electrode possesses high oxygen evolution potential (2.40 V), smaller charge transfer resistance (29.40 Ω cm -2 ), higher porosity (0.90), enhanced roughness factor (181), and larger voltammetric charge value (57.4 mC cm -2 ). Electrocatalytic oxidation of Rhodamine B (RhB) was employed to evaluate the efficiency of the fabricated 3D-Ti/Sb-SnO 2 -Gr anode. The results show that the electrochemical reaction follows pseudo first order kinetics with rate constant (k) value of 4.93 × 10 -2 min -1 , which is about 3.91 times higher compared to flat Ti/Sb-SnO 2 . The fabricated electrode demonstrates better stability and low specific energy consumption signifying its potential usage in electrocatalysis. Copyright © 2016 Elsevier Ltd. All rights reserved.

  1. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    International Nuclear Information System (INIS)

    Korhonen, E; Prozheeva, V; Tuomisto, F; Bierwagen, O; Speck, J S; White, M E; Galazka, Z; Liu, H; Izyumskaya, N; Avrutin, V; Özgür, Ü; Morkoç, H

    2015-01-01

    We present positron annihilation results on Sb-doped SnO 2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO 2 the concentrations appear too low to cause significant compensation. (invited article)

  2. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    Science.gov (United States)

    Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

    2015-02-01

    We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.

  3. A quantum chemical analysis of Zn and Sb doping and co-doping in SnO2

    Directory of Open Access Journals (Sweden)

    Luis Villamagua

    2017-10-01

    Full Text Available This work presents a quantum chemical study of Zn and Sb doping and co-doping in SnO2 carried out by a DFT+U method. The analysis has been developed by introducing three different modifications in the otherwise pure SnO2 system. In the first place, an oxygen vacancy was introduced within the crystal. Following, such a system was doped (separately by Zn or Sb impurities. Finally, the best energetic positions for both Zn and Sb atoms were simultaneously introduced within the lattice. Results of the simulations show that the confined charge that appeared due to the introduction of the oxygen vacancy interacts with the dopants atoms, being this interaction mostly responsible of the observed effects, i.e., EG shrinkage, F-centers formations, and magnetic momentum rise.

  4. Martensitic transformation behavior in Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jai-young; Chun, Su-jin; Kim, Nam-suk; Cho, Jeung-won; Kim, Jae-hyun [School of Materials Science and Engineering, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of); Yeom, Jong-taek [Light Metal Division, Korea Institute of Materials Science (KIMS), Changwon 642-831 (Korea, Republic of); Kim, Jae-il [Materials Science and Engineering, University of Dong-A, Hadan-dong, Saha-gu, Busan 604-714 (Korea, Republic of); Nam, Tae-hyun, E-mail: tahynam@gnu.ac.kr [School of Materials Science and Engineering, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of)

    2013-12-15

    Graphical abstract: - Highlights: • Ag, In and Sn were soluble in TiNi matrix, while Sb, Te, Tl, Pb and Bi were not. • The B2-R-B19′transformation occurred in Ti-Ni-(Ag, In, Sn) alloys. • Solid solution hardening was essential for inducing the B2-R transformation. - Abstract: The microstructures and transformation behaviors of Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys were investigated using electron probe micro-analysis (EPMA), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and Micro Vickers hardness tests. All specimens consisted of Ti–Ni matrices and second phase particles. Ag, In and Sn were soluble in Ti–Ni matrices with a limited solubility (≤1.0 at%), while Sb, Te, Tl, Pb and Bi were not soluble. Two-stage B2-R-B19′ transformation occurred in Ti–48.8Ni–1.2Ag, Ti–49.0Ni–1.0In and Ti–49.0Ni–1.0Sn alloys, while one-stage B2-B19′ transformation occurred in Ti–49.0Ni–1.0Ag, Ti–49.0Ni–1.0Sb, Ti–49.0Ni–1.0Te, Ti–49.0Ni–1.0Pb and Ti–49.0Ni–1.0Bi alloys. Micro Vickers hardness of the alloys displaying the B2-R-B19′ transformation (Hv 250–368) was much larger than that (

  5. Martensitic transformation behavior in Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys

    International Nuclear Information System (INIS)

    Jang, Jai-young; Chun, Su-jin; Kim, Nam-suk; Cho, Jeung-won; Kim, Jae-hyun; Yeom, Jong-taek; Kim, Jae-il; Nam, Tae-hyun

    2013-01-01

    Graphical abstract: - Highlights: • Ag, In and Sn were soluble in TiNi matrix, while Sb, Te, Tl, Pb and Bi were not. • The B2-R-B19′transformation occurred in Ti-Ni-(Ag, In, Sn) alloys. • Solid solution hardening was essential for inducing the B2-R transformation. - Abstract: The microstructures and transformation behaviors of Ti–Ni–X (Ag, In, Sn, Sb, Te, Tl, Pb, Bi) ternary alloys were investigated using electron probe micro-analysis (EPMA), X-ray diffraction (XRD), differential scanning calorimetry (DSC) and Micro Vickers hardness tests. All specimens consisted of Ti–Ni matrices and second phase particles. Ag, In and Sn were soluble in Ti–Ni matrices with a limited solubility (≤1.0 at%), while Sb, Te, Tl, Pb and Bi were not soluble. Two-stage B2-R-B19′ transformation occurred in Ti–48.8Ni–1.2Ag, Ti–49.0Ni–1.0In and Ti–49.0Ni–1.0Sn alloys, while one-stage B2-B19′ transformation occurred in Ti–49.0Ni–1.0Ag, Ti–49.0Ni–1.0Sb, Ti–49.0Ni–1.0Te, Ti–49.0Ni–1.0Pb and Ti–49.0Ni–1.0Bi alloys. Micro Vickers hardness of the alloys displaying the B2-R-B19′ transformation (Hv 250–368) was much larger than that (< Hv 200) of the alloys displaying the B2-B19′ transformation. Solid solution hardening was an important factor for inducing the B2-R transformation in Ti–Ni–X (X = non-transition elements) alloys

  6. Spherical nano-SnSb/MCMB/carbon core–shell composite for high stability lithium ion battery anodes

    International Nuclear Information System (INIS)

    Li, Juan; Ru, Qiang; Hu, Shejun; Sun, Dawei; Zhang, Beibei; Hou, Xianhua

    2013-01-01

    A novel multi-step design of spherical nano-SnSb/MCMB/carbon core–shell composite for high stability and long life lithium battery electrodes has been introduced. The core–shell composite was successfully synthesized via co-precipitation and subsequent pyrolysis. The resultant composite sphere consisted of nanosized SnSb alloy and mesophase carbon microbeads (MCMB, 10 μm) embedded in a carbon matrix pyrolyzed from glucose and petroleum pitch, in which the MCMB was treated to be the inner core to offer mechanical support and efficient electron conducting pathway. The composite material exhibited a unique stability with a retention discharge capacity rate of 83.52% with reversible capacity of 422.5 mAh g −1 after 100 cycles and a high initial coulombic efficiency of 83.53%. The enhanced electrochemical performance is attributed to the structural stability of the composite sphere during the charging–discharging process

  7. Analytisch-chemische aspecten van de bepaling van As, Ca, Cd, Sb, Sn, Pb, Zn in MVS-filterdestruaten met ICP-MS

    NARCIS (Netherlands)

    Velde-Koerts T van der; Lesquillier AI; Ritsema R; LAC

    1995-01-01

    In dit onderzoek werd een ICP-MS-methode ontwikkeld voor de bepaling van Ca, Zn, As, Cd, Sb, Sn en Pb in filterdestruaten. De onderste analysegrens is 30 ng/l Sb, 60 ng/l Cd, 200 ng/l As, 300 ng/l Sn, 400 ng/l Pb, 4 mug/l Zn en 20 mug/l Ca ; de precisie is beter dan 7% RSD voor Ca, 4% RSD voor

  8. The Shear Strength and Fracture Behavior of Sn-Ag- xSb Solder Joints with Au/Ni-P/Cu UBM

    Science.gov (United States)

    Lee, Hwa-Teng; Hu, Shuen-Yuan; Hong, Ting-Fu; Chen, Yin-Fa

    2008-06-01

    This study investigates the effects of Sb addition on the shear strength and fracture behavior of Sn-Ag-based solders with Au/Ni-P/Cu underbump metallization (UBM) substrates. Sn-3Ag- xSb ternary alloy solder joints were prepared by adding 0 wt.% to 10 wt.% Sb to a Sn-3.5Ag alloy and joining them with Au/Ni-P/Cu UBM substrates. The solder joints were isothermally stored at 150°C for up to 625 h to study their microstructure and interfacial reaction with the UBM. Single-lap shear tests were conducted to evaluate the mechanical properties, thermal resistance, and failure behavior. The results show that UBM effectively suppressed intermetallic compound (IMC) formation and growth during isothermal storage. The Sb addition helped to refine the Ag3Sn compounds, further improving the shear strength and thermal resistance of the solders. The fracture behavior evolved from solder mode toward the mixed mode and finally to the IMC mode with increasing added Sb and isothermal storage time. However, SnSb compounds were found in the solder with 10 wt.% Sb; they may cause mechanical degradation of the solder after long-term isothermal storage.

  9. Study of structural and morphological properties of thermally evaporated Sn{sub 2}Sb{sub 6}S{sub 11} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Mehrez, N., E-mail: najia.benmehrez@gmail.com [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Khemiri, N. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Kanzari, M. [Université Tunis El Manar, Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs, ENIT, BP 37, Le belvédère, 1002 Tunis (Tunisia); Institut Préparatoire aux Etudes d’Ingénieurs de Tunis Montfleury, Université de Tunis (Tunisia)

    2016-10-01

    In this study, we report the structural and morphological properties of the new material Sn{sub 2}Sb{sub 6}S{sub 11} thin films prepared on glass substrates by vacuum thermal evaporation at various substrate temperatures (30, 60, 100, 140, 180 and 200 °C). Sn{sub 2}Sb{sub 6}S{sub 11} ingot was synthesized by the horizontal Bridgman technique. The structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The films were characterized for their structural properties by using XRD. All films were polycrystalline in nature. The variations of the structural parameters of the films with the substrate temperature were investigated. The results show that the crystallite sizes increase as the substrate temperature increases. The morphological properties of the films were analyzed by atomic force microscopy (AFM). The roughness and the topography of the surface of the films strongly depend on the substrate temperature. - Highlights: • Sn{sub 2}Sb{sub 6}S{sub 11} powder was successfully synthesized by the horizontal Bridgman technique. • Sn{sub 2}Sb{sub 6}S{sub 11} films were grown by thermal evaporation at different substrate temperatures. • Structural properties of Sn{sub 2}Sb{sub 6}S{sub 11} powder were investigated. • The effect of the substrate temperature on structural and morphological of Sn{sub 2}Sb{sub 6}S{sub 11} films properties was studied.

  10. Heavy fermion behaviour in the high pressure structure of CeSb{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseev, Vitaly; Feng, Zhuo; Zou, Yang; Grosche, F. Malte [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom); Giles, Terence; Niklowitz, Philipp [Department of Physics, Royal Holloway, University of London, Egham TW20 0EX (United Kingdom); Wilhelm, Heribert [Beamline I15, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Lampronti, Giulio [Department of Earth Sciences, University of Cambridge, Cambridge CB2 3EQ (United Kingdom)

    2015-07-01

    The Kondo lattice system CeSb{sub 2} crystallises in the orthorhombic SmSb{sub 2} structure and exhibits a series of magnetic phase transitions at low temperature. It has been reported to become ferromagnetic below 15 K, with the ordered moment oriented within the basal plane, and to undergo two further transitions at 9K and 12K. These transition are suppressed above a hydrostatic pressure p{sub c} ≅ 16 kbar. We present high pressure transport and x-ray diffraction results, which examine the high pressure state of CeSb{sub 2}. Our findings suggest that CeSb{sub 2} undergoes a drastic structural change at p{sub c} into a new and now fully resolved crystal structure. Whereas in the low pressure structure, CeSb{sub 2} is a local moment magnet, in the high pressure structure it exhibits transport properties characteristic of a heavy fermion material with a low Kondo temperature scale of the order of 10 K.

  11. Anomalies in the temperature dependence of Faraday rotation on yttrium iron garnets doped with Sn, Zr, or Sb

    International Nuclear Information System (INIS)

    D'Orazio, F.; Giammaria, F.; Lucari, F.

    1991-01-01

    Faraday rotation (FR) measurements on three thin single crystalline samples of yttrium iron garnet doped with Sn, Zr, and Sb as a function of temperature in the near infrared region show a monotonic variation of the magneto-optical signal as the temperature is decreased from 300 to about 50 K. At this point the FR signal levels off. Moreover, the slope of the plot for the sample, doped with Sn, changes sign below this temperature, at particular wavelengths. An explanation of the observed phenomena is given in terms of the energy levels of the Fe 2+ ions in the different sites of the crystal and the temperature dependence of their populations caused by the relative orientation between the local symmetry axis of the specific site and the direction of the sample magnetization. Hysteresis loops of the Faraday rotation as a function of applied magnetic field have been also measured showing the presence of a remanence of the sample magnetization

  12. Room temperature synthesis of crystalline Sb2S3 for SnO2 ...

    Indian Academy of Sciences (India)

    attention of researchers owing to their low cost, simple fabrication technique and .... The typical SEM images of as-deposited Sb2S3 in figure 3a show the .... reduce back the excited Sb2S3 to its ground state and to set the system for next ...

  13. Structural stability of ternary C22–Zr6X2Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and C22–Zr6Sn2T′ (T′=Fe, Co, Ni, Cu) compounds

    International Nuclear Information System (INIS)

    Colinet, Catherine; Crivello, Jean-Claude; Tedenac, Jean-Claude

    2013-01-01

    The crystal and electronic structures, and the thermodynamic properties of Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu) ternary compounds in the Fe 2 P-type structure have been investigated by means of first principle calculations. The calculated structural parameters are in good agreement with the experimental data. The total electronic densities of states as well as the Bader charges of the atoms have been computed. Both electronic and size effects allow to explain the stability of the ternary Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu) compounds. - Graphical abstract: Valence charge electronic localization function (ELF) calculated for Zr 6 Sb 2 Co compound. Display Omitted - Highlights: • Structural stability of Zr 6 X 2 T′ compounds (X: p element, T′: late transition metal) in the Fe 2 P-type structure. • First principles calculation of lattice parameters and enthalpies of formation. • Electronic densities of state in the series Zr 6 Sn 2 T′ (T′=Fe, Co, Ni, Cu). • Electronic densities of state in the series Zr 6 X 2 Co (X=Al, Ga, Sn, As, Sb, Bi, Te)

  14. The crystal structure of franckeite, Pb21.7Sn9.3Fe4.0Sb8.1S56.9

    DEFF Research Database (Denmark)

    Makovicky, Emil; Petricek, Vaclav; Dusek, Michal

    2011-01-01

    and forms a homologous pair with cylindrite, which has thinner Q slabs. The Q slabs in franckeite are four atomic layers thick. The two components have their own lattices and a common modulation. The Q slab of the refined franckeite structure, Pb21.74Sn9.34Fe3.95Sb8.08S56.87, is an MS layer (M = Pb2+, Sn2...... layer (M = Sn4+, Fe2+) with a = 3.665(8), b = 6.2575(16), c = 17.419(5) Å, a = 95.25(2)°, ß = 95.45(2)°, ¿ = 89.97(2)°; the modulation vector is q = –0.00087(8) a* + 0.13725(16) b* – 0.0314(4) c*. The a and b vectors of both subsystems are parallel; the c vectors diverge. (3+2)D superspace refinement...... was refined as Pb0.74(Sn,Sb)0.26, whereas that of cations, which are adjacent to the interspace with lone electron pairs, with a configuration analogous to that observed in orthorhombic SnS, corresponds to (Sn,Sb)0.73Pb0.27. Iron is dispersed over the octahedral Sn4+ sites in the H layer. Transversal...

  15. Photoreduction of Carbon Dioxide to Methane Over Sb1.5Sn8.5-x Ti x O19.0 with High Conductivity.

    Science.gov (United States)

    Do, Jeong Yeon; Kwak, Byeong Sub; Kang, Misook

    2018-09-01

    In order to enhance the photoreduction of CO2 to CH4, a new type of photocatalyst, Sb1.5Sn8.5-xTixO19.0, with high conductivity and low bandgap was developed by partially incorporating Ti into the framework of Sb1.5Sn8.5O19.0 (antimony-doped tin oxide, ATO) using a controlled hydrothermal method. XRD and TEM analyses indicated that the Sb1.5Sn8.5-xTixO19.0 particles exhibited a tetragonal crystal structure and were approximately 20 nm in size. Furthermore, the bandgap and conductivity of these materials increased with increasing Ti content. A study of the photoreduction of CO2 with H2O revealed a remarkable increase in the generation of CH4 over the Sb1.5Sn8.5-xTixO19.0 catalysts. In particular, CH4 generation was the highest when Sb1.5Sn8.5Ti1.0O19.0 was used as the photocatalyst, and was three-fold higher than that achieved by using anatase TiO2. Photoluminescence studies showed that the enhanced photocatalytic activity of the Sb1.5Sn8.5-xTixO19.0 materials could be attributed to the interfacial transfer of photogenerated charges, which led to an effective charge separation and inhibition of the recombination of photogenerated electron-hole (e-/h+) pairs.

  16. Microstructure and electrical properties in SnO2 ceramics with sequential addition of Co, Sb and Ca

    International Nuclear Information System (INIS)

    Aguilar-Martinez, J A; Hernandez, M B; Glot, A B; Pech-Canul, M I

    2007-01-01

    The effect of sequential additions of Co 3 O 4 , Sb 2 O 5 and CaCO 3 on the microstructure and electrical behaviour of SnO 2 -based ceramics was investigated. Although without conferring varistor properties, Co 3 O 4 additions promote densification in the material. Successive addition of Sb 2 O 5 provides the sample varistor properties but with low nonlinearity coefficient (α = 5.7) and high electric field (E 1 = 2022 V cm -1 ) at current density 10 -3 A cm -3 . Moreover, antimony oxide addition degrades the microstructure condition by inducing porosity. Subsequent addition of CaCO 3 promotes densification and grain growth. However, it does not lead to the increase in the nonlinearity coefficient. It only lowers the electric field, thus making the material suitable for lower voltage applications. Observed significant increase in the relative dielectric permittivity up to a factor of about 60 and 200 in the cases of antimony or antimony and calcium addition to SnO 2 -Co 3 O 4 (accompanied by the appearance of varistor effect) is due to the formation of barrier depletion layers at grain boundaries

  17. X-ray fluorescence determination of Sn, Sb, Pb in lead-based bearing alloys using a solution technique

    Science.gov (United States)

    Tian, Lunfu; Wang, Lili; Gao, Wei; Weng, Xiaodong; Liu, Jianhui; Zou, Deshuang; Dai, Yichun; Huang, Shuke

    2018-03-01

    For the quantitative analysis of the principal elements in lead-antimony-tin alloys, directly X-ray fluorescence (XRF) method using solid metal disks introduces considerable errors due to the microstructure inhomogeneity. To solve this problem, an aqueous solution XRF method is proposed for determining major amounts of Sb, Sn, Pb in lead-based bearing alloys. The alloy samples were dissolved by a mixture of nitric acid and tartaric acid to eliminated the effects of microstructure of these alloys on the XRF analysis. Rh Compton scattering was used as internal standard for Sb and Sn, and Bi was added as internal standard for Pb, to correct for matrix effects, instrumental and operational variations. High-purity lead, antimony and tin were used to prepare synthetic standards. Using these standards, calibration curves were constructed for the three elements after optimizing the spectrometer parameters. The method has been successfully applied to the analysis of lead-based bearing alloys and is more rapid than classical titration methods normally used. The determination results are consistent with certified values or those obtained by titrations.

  18. Microstructure and electrical properties in SnO{sub 2} ceramics with sequential addition of Co, Sb and Ca

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar-Martinez, J A [Instituto de MinerIa, Universidad Tecnologica de la Mixteca, Carretera a Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca 69000 (Mexico); Hernandez, M B [Instituto de Diseno, Universidad Tecnologica de la Mixteca, Carretera a Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca 69000 (Mexico); Glot, A B [Division de Posgrado, Universidad Tecnologica de la Mixteca, Carretera a Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca 69000 (Mexico); Pech-Canul, M I [Cinvestav Saltillo, Carr. Saltillo-Mty Km 13 Apdo., Saltillo Coahuila 25000 (Mexico)

    2007-11-21

    The effect of sequential additions of Co{sub 3}O{sub 4}, Sb{sub 2}O{sub 5} and CaCO{sub 3} on the microstructure and electrical behaviour of SnO{sub 2}-based ceramics was investigated. Although without conferring varistor properties, Co{sub 3}O{sub 4} additions promote densification in the material. Successive addition of Sb{sub 2}O{sub 5} provides the sample varistor properties but with low nonlinearity coefficient ({alpha} = 5.7) and high electric field (E{sub 1} = 2022 V cm{sup -1}) at current density 10{sup -3} A cm{sup -3}. Moreover, antimony oxide addition degrades the microstructure condition by inducing porosity. Subsequent addition of CaCO{sub 3} promotes densification and grain growth. However, it does not lead to the increase in the nonlinearity coefficient. It only lowers the electric field, thus making the material suitable for lower voltage applications. Observed significant increase in the relative dielectric permittivity up to a factor of about 60 and 200 in the cases of antimony or antimony and calcium addition to SnO{sub 2}-Co{sub 3}O{sub 4} (accompanied by the appearance of varistor effect) is due to the formation of barrier depletion layers at grain boundaries.

  19. Impact of Nb vacancies and p-type doping of the NbCoSn-NbCoSb half-Heusler thermoelectrics.

    Science.gov (United States)

    Ferluccio, Daniella A; Smith, Ronald I; Buckman, Jim; Bos, Jan-Willem G

    2018-02-07

    The half-Heuslers NbCoSn and NbCoSb have promising thermoelectric properties. Here, an investigation of the NbCo 1+y Sn 1-z Sb z (y = 0, 0.05; 0 ≤ z ≤ 1) solid-solution is presented. In addition, the p-type doping of NbCoSn using Ti and Zr substitution is investigated. Rietveld analysis reveals the gradual creation of Nb vacancies to compensate for the n-type doping caused by the substitution of Sb in NbCoSn. This leads to a similar valence electron count (∼18.25) for the NbCo 1+y Sn 1-z Sb z samples (z > 0). Mass fluctuation disorder due to the Nb vacancies strongly decreases the lattice thermal conductivity from 10 W m -1 K -1 (z = 0) to 4.5 W m -1 K -1 (z = 0.5, 1). This is accompanied by a transition to degenerate semiconducting behaviour leading to large power factors, S 2 /ρ = 2.5-3 mW m -1 K -2 and figures of merit, ZT = 0.25-0.33 at 773 K. Ti and Zr can be used to achieve positive Seebeck values, e.g. S = +150 μV K -1 for 20% Zr at 773 K. However, the electrical resistivity, ρ 323K = 27-35 mΩ cm, remains too large for these materials to be considered useful p-type materials.

  20. Comparison of electrochemical performance of as-cast Pb-1 wt.% Sn and Pb-1 wt.% Sb alloys for lead-acid battery components

    Energy Technology Data Exchange (ETDEWEB)

    Osorio, Wislei R.; Peixoto, Leandro C.; Garcia, Amauri [Department of Materials Engineering, University of Campinas - UNICAMP, PO Box 612, 13083-970 Campinas, SP (Brazil)

    2010-03-15

    A comparative experimental study of the electrochemical features of as-cast Pb-1 wt.% Sn and Pb-1 wt.% Sb alloys is carried out with a view to applications in the manufacture of lead-acid battery components. The as-cast samples are obtained using a water-cooled unidirectional solidification system. Pb-Sn and Pb-Sb alloy samples having similar coarse cell arrays are subjected to corrosion tests in order to assess the effect of Sn or Sb segregation in the cell boundary on the electrochemical performance. Electrochemical impedance spectroscopy (EIS) diagrams, potentiodynamic polarization curves and an equivalent circuit analysis are used to evaluate the electrochemical parameters in a 0.5 M H{sub 2}SO{sub 4} solution at 25 C. Both the experimental and simulated EIS parameters evidence different kinetics of corrosion. The Pb-1 wt.% Sn alloy is found to have a current density which is of about three times lower than that of the Pb-1 wt.% Sb alloy which indicates that dilute Pb-Sn alloys have higher potential for application as positive grid material in maintenance-free Pb-acid batteries. (author)

  1. Epitaxial Sb-doped SnO_2 and Sn-doped In_2O_3 transparent conducting oxide contacts on GaN-based light emitting diodes

    International Nuclear Information System (INIS)

    Tsai, Min-Ying; Bierwagen, Oliver; Speck, James S.

    2016-01-01

    We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO_2 (ATO) and (111)-oriented, cubic Sn-doped In_2O_3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO_D_o_m_a_i_n_1[‐ 211]|| ITO_D_o_m_a_i_n_2[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10"− "3 Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga_2O_3 interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10"−"4 Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO_2:Sb (ATO) and In_2O_3:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short wavelengths than ITO.

  2. Synthesis and electrochemical performances of amorphous carbon-coated Sn-Sb particles as anode material for lithium-ion batteries

    International Nuclear Information System (INIS)

    Wang Zhong; Tian Wenhuai; Liu Xiaohe; Yang Rong; Li Xingguo

    2007-01-01

    The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles. The as-prepared composite materials show much improved electrochemical performances as anode materials for lithium-ion batteries compared with Sn-Sb alloy and carbon alone. This amorphous carbon-coated Sn-Sb particle is extremely promising anode materials for lithium secondary batteries and has a high potentiality in the future use. - Graphical abstract: The amorphous carbon coating on the Sn-Sb particles was prepared from aqueous glucose solutions using a hydrothermal method. Because the outer layer carbon of composite materials is loose cotton-like and porous-like, it can accommodate the expansion and contraction of active materials to maintain the stability of the structure, and hinder effectively the aggregation of nano-sized alloy particles

  3. Effect of Sn and Sb element on the magnetism and functional properties of Ni–Mn–Al ferromagnetic shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Sandeep, E-mail: sandeepxag@yahoo.co.in [LCMP, Department of Condensed Matter Physics and Material Sciences, SN Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India); Mukhopadhyay, P.K. [LCMP, Department of Condensed Matter Physics and Material Sciences, SN Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India)

    2016-03-15

    We have replaced Al partially with Sb and Sn in Ni–Mn–Al systems and investigated its effect on magnetism, entropy change and magnetoresistance in the vicinity of martensitic transformation. Both the samples had identical lattice parameters and Mn contents, which are mostly responsible for magnetism in these systems, yet there were marked changes in magnetic and functional properties of these systems. It was found that the magnetization increased in Sb alloy, while entropy change and magnetoresistance decreased as compared to Sn alloy. These changes are attributed to the change in antiferromagnetic interaction as a result of variation in the Ni d–Mn d hybridization arising due to presence of different sp elements. - Highlights: • Sn and Sb system has same Mn and Ni content and lattice parameter. • Both systems has disparity in magnetism, entropy change and magnetoresistance. • Difference was due to change in the Ni 3d–Mn 3d hybridization. • Sb based alloys are more suitable for mechanical devices. • Sn based alloys are more suitable for magnetocaloric effect and magnetoresistance.

  4. Effect of Ge, Sn, Sb on the resistance to swelling of austenitic alloys irradiated by 1 MeV electrons

    International Nuclear Information System (INIS)

    Dubuisson, P.; Levy, V.; Seran, J.L.

    1987-01-01

    The effect of new solute elements namely Ge, Sn and Sb on the void swelling resistance of austenitic alloys irradiated with 1 MeV electrons has been studied. Except for tin in Ti-modified 316, all solute improve the swelling resistance of base alloys. Tin addition shifts the swelling peak of 316 S.S. to high temperature. In fact, these solute additions have the same qualitative effect on the swelling components: they enhance the void density and decrease strongly void growth rate. This effect is opposite to the one of usual swelling inhibitors such as Si or Ti which decrease the void density. We have explained this influence on the void nucleation and void growth by introducing a strong interaction between vacancies and solute atoms in a void growth model

  5. Effect of different sound atmospheres on SnO2:Sb thin films prepared by dip coating technique

    Science.gov (United States)

    Kocyigit, Adem; Ozturk, Erhan; Ejderha, Kadir; Turgut, Guven

    2017-11-01

    Different sound atmosphere effects were investigated on SnO2:Sb thin films, which were deposited with dip coating technique. Two sound atmospheres were used in this study; one of them was nay sound atmosphere for soft sound, another was metallic sound for hard sound. X-ray diffraction (XRD) graphs have indicated that the films have different orientations and structural parameters in quiet room, metallic and soft sound atmospheres. It could be seen from UV-Vis spectrometer measurements that films have different band gaps and optical transmittances with changing sound atmospheres. Scanning electron microscope (SEM) and AFM images of the films have been pointed out that surfaces of films have been affected with changing sound atmospheres. The electrical measurements have shown that films have different I-V plots and different sheet resistances with changing sound atmospheres. These sound effects may be used to manage atoms in nano dimensions.

  6. Physical properties of electrically conductive Sb-doped SnO2 transparent electrodes by thermal annealing dependent structural changes for photovoltaic applications

    International Nuclear Information System (INIS)

    Leem, J.W.; Yu, J.S.

    2011-01-01

    Highlights: · The physical properties of sputtered Sb-doped SnO 2 after annealing were studied. · The figure of merit was estimated from the integral PFD and sheet resistance. · The characteristics of Sb-doped SnO 2 films were optimized by the figure of merit. · An optimized Sb-doped SnO 2 layer is promising for high efficiency photovoltaic cells. - Abstract: We have investigated the optical and electrical characteristics of antimony (Sb)-doped tin oxide (SnO 2 ) films with modified structures by thermal annealing as a transparent conductive electrode. The structural properties were analyzed from the relative void % by spectroscopic ellipsometry as well as the scanning electron microscopy images and X-ray diffraction patterns. As the annealing temperature was raised, Sb-doped SnO 2 films exhibited a slightly enhanced crystallinity with the increase of the grain size from 17.1 nm at 500 deg. C to 34.3 nm at 700 deg. C. Furthermore, the refractive index and extinction coefficient gradually decreased due to the increase in the relative void % within the film during the annealing. The resistivity decreased to 8.2 x 10 -3 Ω cm at 500 deg. C, but it increased rapidly at 700 deg. C. After thermal annealing, the optical transmittance was significantly increased. For photovoltaic applications, the photonic flux density and the figure of merit over the entire solar spectrum were obtained, indicating the highest values of 5.4 x 10 14 cm -2 s -1 nm -1 at 1.85 eV after annealing at 700 deg. C and 340.1 μA cm -2 Ω -1 at 500 deg. C, respectively.

  7. First-principles study of new series of quaternary Heusler alloys CsSrCZ (Z=Si, Ge, Sn, P, As, and Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Bouabça, A. [Condensed Matter and Sustainable Development Laboratory (LMCDD), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000 (Algeria); Rozale, H., E-mail: hrozale@yahoo.fr [Condensed Matter and Sustainable Development Laboratory (LMCDD), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000 (Algeria); Amar, A. [Condensed Matter and Sustainable Development Laboratory (LMCDD), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000 (Algeria); Wang, X.T. [School of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400044 (China); Sayade, A. [UCCS, CNRS-UMR 8181, Université d’Artois, Faculté des Sciences Jean Perrin, Rue Jean Souvraz, SP 18, 62307 Lens Cedex (France); Chahed, A. [Condensed Matter and Sustainable Development Laboratory (LMCDD), University of Sidi Bel-Abbes, Sidi Bel-Abbes 22000 (Algeria)

    2016-12-01

    The structural, electronic, magnetic, and thermal properties of new quaternary Heusler alloys CsSrCZ (Z=Si, Ge, Sn, P, As, and Sb) were investigated using the full-potential linearized augmented plane wave (FPLAPW) within the generalized gradient approximation (GGA) and GGA plus modified Becke and Johnson as the exchange correlation. The results showed that all Heusler compounds were stable in Type (I) structure. The CsSrCZ (Z=Si, Ge, Sn) compounds had a nearly HM characteristic, and CsSrCZ (Z=P, As, Sb) compounds were true half-metallic (HM) ferromagnets. The strong spin polarization of p orbital for C, Si, Ge, Sn, P, As, and Sb atoms is found to be the origin of ferromagnetic. The half-metallicity is preserved up to a lattice contraction of 3.45%, 1.69%, 1.69%, 7.16%, 7.16%, and 11.2% for all six quaternary Heusler compounds. We also investigated the thermal effects using the quasi-harmonic Debye model. - Highlights: • Electronic, magnetic, and thermodynamic properties of CsSrCZ (Z=Si, Ge, Sn, P, As, and Sb) are investigated. • Until now, there have been no reports theoretical and experimental studies on d{sup 0} half-metals with quaternary structures. • The strong spin polarization of p orbital for C, Si, Ge, Sn, P, As, and Sb atoms is found to be the origin of ferromagnetic. • The half-metallicity is preserved up to a lattice contraction.

  8. Incorporation of sol-gel SnO{sub 2}:Sb into nanoporous SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Canut, B. [Laboratoire de Physique de la Matiere Condensee et Nanostructures, Universite ClaudeBernard Lyon I, UMR CNRS 5586, Dept. de Physique des Materiaux, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex (France)]. E-mail: bruno.canut@lpmcn.univ-lyon1.fr; Blanchin, M.G. [Laboratoire de Physique de la Matiere Condensee et Nanostructures, Universite ClaudeBernard Lyon I, UMR CNRS 5586, Dept. de Physique des Materiaux, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex (France); Ramos-Canut, S. [Laboratoire de Physique de la Matiere Condensee et Nanostructures, Universite ClaudeBernard Lyon I, UMR CNRS 5586, Dept. de Physique des Materiaux, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex (France); Teodorescu, V. [National Institute for Physics of Materials, Magurele, R-76900 Bucharest (Romania); Toulemonde, M. [Centre Interdisciplinaire de Recherche Ions Laser, CIRIL-GANIL, rue Claude Bloch, BP 5133, 14070 Caen Cedex 5 (France)

    2006-04-15

    Silicon oxide films thermally grown on Si(1 0 0) wafers were irradiated with 200 MeV {sup 197}Au ions in the 10{sup 9}-10{sup 1} cm{sup -2} fluence range. The targets were then etched at room temperature in aqueous HF solution (1 vol.%) for various durations. Atomic force microscopy (AFM) in the tapping mode was used to probe the processed surfaces. Conical holes with a low size dispersion were evidenced. Their surface diameter varies between 20 and 70 nm, depending on the etching time. Sol-gel dip coating technique, associated with a further annealing treatment performed at 500 {sup o}C for 15 min, was used to fill the nanopores created in SiO{sub 2} with a transparent conductive oxide (SnO{sub 2} doped with antimony). Transmission electron microscopy (TEM) performed on cross-sectional specimen showed that SnO{sub 2}:Sb crystallites of {approx}5 nm mean size are trapped in the holes without degrading their geometry.

  9. Performance PtSnRh electrocatalysts supported on carbon-Sb2O5.SbO2 for the electro-oxidation of ethanol, prepared by an alcohol-reduction process

    International Nuclear Information System (INIS)

    Castro, Jose Carlos

    2013-01-01

    PtSnRh electrocatalysts supported on carbon-Sb 2 O 5 .SnO 2 , with metal loading of 20 wt%, were prepared by an alcohol-reduction process, using H 2 PtCl 6 .6H 2 O (Aldrich), RhCl 3 .xH 2 O (Aldrich) and SnCl 2 .2H 2 O (Aldrich), as source of metals; Sb 2 O 5 .SnO 2 (ATO) and carbon Vulcan XC72, as support; and ethylene glycol as reducing agent. The electrocatalysts obtained were characterized physically by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The diffractograms showed which PtSnRh/C-ATO electrocatalysts had FCC structure of Pt and Pt alloys, besides several peaks associated with SnO 2 and ATO. The average sizes of crystallites were between 2 and 4 nm. TEM micrographs showed a good distribution of the nanoparticles on the support. The average sizes of particles were between 2 and 3 nm, with good agreement for the average size of the crystallites. The performances of the electrocatalysts were analyzed by electrochemical techniques and in real conditions of operation using single direct ethanol fuel cell. In the chronoamperometry at 50 deg C, the electrocatalysts with carbon (85 wt%) and ATO (15 wt%) support, showed the best activity, and the atomic proportions which achieved the best results were PtSnRh(70:25:05) e (90:05:05). PtSnRh(70:25:05)/85C+15ATO electrocatalysts showed the best performance in a direct ethanol fuel cell. (author)

  10. Synthesis and Structural Characterization of Heteroboroxines with MB2O3 Core (M = Sb, Bi, Sn)

    NARCIS (Netherlands)

    Mairychova, Barbora; Svoboda, Tomas; Stepnicka, Petr; Ruzicka, Ales; Havenith, Remco W. A.; Alonso, Mercedes; De Proft, Frank; Jambor, Roman; Dostal, Libor

    2013-01-01

    Reaction of organoantimony and organobismuth oxides (LSbO)(2) and (LBiO)(2) (where L is [2,6-bis(dimethylarnino)methyl]phenyl) with four equivalents of the organoboronic acids gave new heteroboroxines LM[(OBR)(2)O] 1a-2c (for M = Sb: R = Ph (1a), 4-CF3C6H4 (1b), ferrocenyl (1c); for M = Bi: R = Ph

  11. Epitaxial Growth and Electronic Structure of Half Heuslers Co1-xNixTiSb (001), Ni1-xCoxTiSn, and PtLuSb

    Science.gov (United States)

    2016-01-09

    lineup of CoTiSb with conventional III/V’s, the valence-band discontinuities in abrupt CoTiSb/InGaAs(001) and CoTiSb/InAlAs(001) heterojunctions were...confirm identification of a topological surface state: first, the state must be confined and show no out-of-plane dispersion; second, the state

  12. Ultrasonic dispersion and off-center rattling in heavy fermion superconductor PrOs4Sb12

    International Nuclear Information System (INIS)

    Nemoto, Yuichi; Ueno, Takafumi; Takeda, Naoya; Yamaguchi, Takashi; Yanagisawa, Tatsuya; Goto, Terutaka; Sugawara, Hitoshi; Sato, Hideyuki

    2006-01-01

    Ultrasonic attenuation measurements have been firstly performed for a large single crystal of PrOs 4 Sb 12 with the dimensions of 5.97x0.6x0.6mm 3 . Remarkable frequency dependence around 20-40K has been observed in the elastic constant and attenuation coefficient of the longitudinal C 11 mode associated with E g symmetry strain in part, which results from a thermally activated off-center rattling with E g symmetry of a Pr ion inside a Sb icosahedron cage. Parameters of a characteristic time τ 0 =3.1x10 -11 s and an activation energy E=225K were obtained. This E g rattling involving a local charge fluctuation inside a Sb cage periodically arranged may couple to the conduction electrons. As a result, the electron-phonon coupling would lead to heavy fermion and its superconductivity in PrOs 4 Sb 12

  13. Performance PtSnRh electrocatalysts supported on carbon-Sb{sub 2}O{sub 5}.SbO{sub 2} for the electro-oxidation of ethanol, prepared by an alcohol-reduction process; Desempenho de eletrocatalisadores PtSnRh suportados em carbono-Sb{sub 2}O{sub 5}.SnO{sub 2} para a oxidacao eletroquimica do etanol, preparados pelo metodo de reducao por alcool

    Energy Technology Data Exchange (ETDEWEB)

    Castro, Jose Carlos

    2013-07-01

    PtSnRh electrocatalysts supported on carbon-Sb{sub 2}O{sub 5}.SnO{sub 2}, with metal loading of 20 wt%, were prepared by an alcohol-reduction process, using H{sub 2}PtCl{sub 6}.6H{sub 2}O (Aldrich), RhCl{sub 3}.xH{sub 2}O (Aldrich) and SnCl{sub 2}.2H{sub 2}O (Aldrich), as source of metals; Sb{sub 2}O{sub 5}.SnO{sub 2} (ATO) and carbon Vulcan XC72, as support; and ethylene glycol as reducing agent. The electrocatalysts obtained were characterized physically by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The diffractograms showed which PtSnRh/C-ATO electrocatalysts had FCC structure of Pt and Pt alloys, besides several peaks associated with SnO{sub 2} and ATO. The average sizes of crystallites were between 2 and 4 nm. TEM micrographs showed a good distribution of the nanoparticles on the support. The average sizes of particles were between 2 and 3 nm, with good agreement for the average size of the crystallites. The performances of the electrocatalysts were analyzed by electrochemical techniques and in real conditions of operation using single direct ethanol fuel cell. In the chronoamperometry at 50 deg C, the electrocatalysts with carbon (85 wt%) and ATO (15 wt%) support, showed the best activity, and the atomic proportions which achieved the best results were PtSnRh(70:25:05) e (90:05:05). PtSnRh(70:25:05)/85C+15ATO electrocatalysts showed the best performance in a direct ethanol fuel cell. (author)

  14. Determination of heavy metals in chinese prickly ash from different ...

    African Journals Online (AJOL)

    digestion, and the contents of copper (Cu), nickel (Ni), chromium (Cr), lead (Pb), cadmium ... concentrations of heavy metals in these CPA samples mean they are safe for human consumption. ... poisoning, including Pb, Cd, As, Hg, Sn, and Sb.

  15. Preparation of MnO2 electrodes coated by Sb-doped SnO2 and their effect on electrochemical performance for supercapacitor

    International Nuclear Information System (INIS)

    Zhang, Yuqing; Mo, Yan

    2014-01-01

    Highlights: • Sb-doped SnO 2 coated MnO 2 electrodes (SS-MnO 2 electrodes) are prepared. • The capacitive property and stability of SS-MnO 2 electrode is superior to uncoated MnO 2 electrode and SnO 2 coated MnO 2 electrode. • Sb-doped SnO 2 coating enhances electrochemical performance of MnO 2 effectively. • SS-MnO 2 electrodes are desirable to become a novel electrode material for supercapacitor. - Abstract: To enhance the specific capacity and cycling stability of manganese binoxide (MnO 2 ) for supercapacitor, antimony (Sb) doped tin dioxide (SnO 2 ) is coated on MnO 2 through a sol-gel method to prepare MnO 2 electrodes, enhancing the electrochemical performance of MnO 2 electrode in sodium sulfate electrolytes. The structure and composition of SS-MnO 2 electrode are characterized by using scanning electron microscope (SEM), transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR) and X-Ray diffraction spectroscopy (XRD). The electrochemical performances are evaluated and researched by galvanostatic charge-discharge test, cyclic voltammogram (CV) and electrochemical impedance spectroscopy (EIS). The results show that SS-MnO 2 electrodes hold porous structure, displaying superior cycling stability at large current work condition in charge-discharge tests and good capacity performance at high scanning rate in CV tests. The results of EIS show that SS-MnO 2 electrodes have small internal resistance. Therefore, the electrochemical performances of MnO 2 electrodes are enhanced effectively by Sb-doped SnO 2 coating

  16. Preparation of catalysts PtSb2O5.SnO2 supported on carbon and ATO using the alcohol reduction method for electrochemical oxidation of ethanol

    International Nuclear Information System (INIS)

    Ayoub, Jamil Mahmoud Said

    2013-01-01

    Pt Sn/C-ATO electrocatalysts with different Pt:Sn atomic ratios (90:10, 70:30 and 50:50) were prepared in a single step by an alcohol-reduction process using H 2 PtCl 6 .6H 2 O and SnCl 2 .2H 2 O as metal sources and ethylene glycol as solvent and reducing agent and a physical mixture of carbon Vulcan XC72 (85 wt%) and Sb 2 O 5 .SnO 2 (15 wt%) as support (C-ATO). The obtained materials were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The catalytic activity for ethanol electro-oxidation in acid medium was investigated by cyclic voltammetry and chronoamperometry and in single direct ethanol fuel cell (DEFC). XRD analyses showed that Pt(FCC), SnO 2 , carbon and ATO phases coexist in the obtained materials. The electrochemical studies showed that PtSn/C-ATO electrocatalysts were more active for ethanol electro-oxidation than PtSn/C electrocatalyst. The experiments at 100 deg C on a single DEFC showed that the power density of the cell using Pt Sn/C-ATO (90:10) was nearly 100% higher than the one obtained using Pt Sn/C (50:50). FTIR measurements showed that the addition of ATO to Pt Sn/C favors the formation of acetic acid as a product while for PtSn/C acetaldehyde was the principal product formed. (author)

  17. Effect of Sb Segregation on Conductance and Catalytic Activity at Pt/Sb-Doped SnO2 Interface: A Synergetic Computational and Experimental Study

    DEFF Research Database (Denmark)

    Hu, Qiang; Colmenares Rausseo, Luis César; Martinez, Umberto

    2015-01-01

    a combined computational and experimental study. It was found that Sb-dopant atoms prefer to segregate toward the ATO/Pt interface. The deposited Pt catalysts, interestingly, not only promote Sb segregation, but also suppress the occurrence of Sb3+ species, a charge carrier neutralizer at the interface...... to support future applications of ATO/Pt-based materials as possible cathodes for PEMFC applications with enhanced durability under practical applications....

  18. Characterization and process development for the selective removal of Sn, Sb, and As from anode slime obtained from electrolytic copper refining

    Directory of Open Access Journals (Sweden)

    Steinlechner S.

    2018-01-01

    Full Text Available The aim of this work was to develop a process for the removal of Sn, Sb and As from anode slime out of copper refinery to disburden a subsequent pyrometallurgical processing for precious metals refinement. For this reason, a detailed literature survey was conducted, followed by a characterization to find the present compounds/alloys and their morphology. A newly developed process concept for the separate extraction of the afore mentioned three target metals was developed and verified by leaching experiments, combined with thermodynamic calculations on their behavior under varying conditions. In this context, the influence of leaching temperature, alkalinity of leaching solution, and solid-liquid ration were evaluated on the extraction yields of Sn, As, and Sb, as well as how to exploit these findings to obtain separate streams enriched in the respective metals.

  19. Electrochemical treatment of 2, 4-dichlorophenol using a nanostructured 3D-porous Ti/Sb-SnO2-Gr anode: Reaction kinetics, mechanism, and continuous operation.

    Science.gov (United States)

    Asim, Sumreen; Zhu, Yunqing; Batool, Aisha; Hailili, Reshalaiti; Luo, Jianmin; Wang, Yuanhao; Wang, Chuanyi

    2017-10-01

    2, 4-dichlorophenol (2, 4-DCP) is considered to be a highly toxic, mutagenic, and possibly carcinogenic pollutant. This study is focused on the electrochemical oxidation of 2, 4-DCP on nanostructured 3D-porous Ti/Sb-SnO 2 -Gr anodes, with the aim of presenting a comprehensive elucidation of mineralization process through the investigation of influential kinetics, the reactivity of hydroxyl radical's and analysis of intermediates. High efficiency was achieved at pH of 3 using Na 2 SO 4 electrolytes at a current density of 30 mA cm -2 . Under the optimized conditions, a maximum removal of 2, 4-DCP of up to 99.9% was reached, whereas a TOC removal of 81% was recorded with the lowest EC TOC (0.49 kW h g -1 ) within 40 min of electrolysis. To explore the stability of the 3D-Ti/Sb-SnO 2 -Gr electrodes, a continuous electrochemical operation was established, and the consistent mineralization results indicated the effectiveness of the 3D-Ti/Sb-SnO 2 -Gr system concerning its durability and practical utilization. EPR studies demonstrated the abundant generation of OH radicals on 3D-Ti/Sb-SnO 2 -Gr, resulting in fast recalcitrant pollutant incineration. From dechlorination and the reactivity of the OH radicals, several intermediates including six cyclic byproducts and three aliphatic carboxylic acids were detected, and two possible degradation pathways were proposed that justify the complete mineralization of 2, 4-DCP. Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. Physical and photoelectrochemical properties of Sb-doped SnO2 thin films deposited by chemical vapor deposition: application to chromate reduction under solar light

    Science.gov (United States)

    Outemzabet, R.; Doulache, M.; Trari, M.

    2015-05-01

    Sb-doped SnO2 thin films (Sb-SnO2) are prepared by chemical vapor deposition. The X-ray diffraction indicates a rutile phase, and the SEM analysis shows pyramidal grains whose size extends up to 200 nm. The variation of the film thickness shows that the elaboration technique needs to be optimized to give reproducible layers. The films are transparent over the visible region. The dispersion of the optical indices is evaluated by fitting the diffuse reflectance data with the Drude-Lorentz model. The refractive index ( n) and absorption coefficient ( k) depend on both the conditions of preparation and of the doping concentration and vary between 1.4 and 2.0 and 0.2 and 0.01, respectively. Tin oxide is nominally non-stoichiometric, and the conduction is dominated by thermally electrons jump with an electron mobility of 12 cm2 V-1 s-1 for Sb-SnO2 (1 %). The ( C 2- V) characteristic in aqueous electrolyte exhibits a linear behavior from which an electrons density of 4.15 × 1018 cm-3 and a flat-band potential of -0.83 V SCE are determined. The electrochemical impedance spectroscopy shows a semicircle attributed to a capacitive behavior with a low density of surface states. The center lies below the real axis with a depletion angle (12°), due to a constant phase element, i.e., a deviation from a pure capacitive behavior, presumably attributed to the roughness and porosity of the film. The straight line at low frequencies is attributed to the Warburg diffusion. The energy diagram reveals the photocatalytic feasibility of Sb-SnO2. As application, 90 % of the chromate concentration (20 mg L-1, pH ~3) disappears after 6 h of exposure to solar light.

  1. The influence of Sn Additions on the Thermoelectric and Transport Properties of FeSb2Te-based Ternary Skutterudites

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Jiří; Plecháček, T.; Drašar, Č.; Kucek, V.; Laufek, František; Černošková, E.; Beneš, L.; Vlček, Milan

    2016-01-01

    Roč. 45, č. 6 (2016), s. 2904-2913 ISSN 0361-5235 R&D Projects: GA ČR(CZ) GA13-33056S Institutional support: RVO:61389013 ; RVO:68378271 Keywords : effective medium theory * FeSb2Te * Sn - addition Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.579, year: 2016

  2. Characteristic of Ti-based PbO{sub 2} anodes with SnO{sub 2}+Sb{sub 2}O{sub 3} intermediate layers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.; Tong, H.; Xu, W. [Yangzhou Univ., College of Chemistry and Chemical Engineering, Yangzhou (China)

    2006-07-01

    Ceramic coatings are used in many electrochemical applications, such as organic synthetic applications, wastewater treatment and oxygen production. These processes typically occur in aqueous sulphuric acid. Desirable features for electrode materials include electro-catalytic activity, high stability, low cost, good overall performance under mild conditions and commercial availability. Lead dioxide exhibits excellent chemical stability, high conductivity, high overpotential for oxygen evolution and lower cost in an acid medium. Studies have shown that the stability of active coating prepared by depositing lead dioxide on titanium substrate is poor. In order to solve this problems, methods of doping expensive noble metals or adding an intermediate layer have been examined. Electrode coatings are very sensitive to preparation procedures, in which precursors play an important role in the surface morphology, microstructure, final composition and stability of anodes. However, appreciable inorganic salt loss has been reported using traditional precursors. A polymeric precursor (PP) method commonly used in the preparation of nano-particles has certain advantages, such as easy manipulation and insensitivity to the presence of water. This study characterized the surface morphology and electrochemical behaviour of titanium (Ti)/tin oxide (SnO{sub 2}) plus antimony oxide ((Sb{sub 2}O{sub 3})/lead dioxide (PbO{sub 2}) anode with SnO{sub 2} plus Sb{sub 2}O{sub 3} intermediate coatings. The electrochemical performance of Ti/SnO{sub 2}+Sb{sub 2}O{sub 3}/PbO{sub 2} anode preparing intermediate layer by the PP method was compared with alcohol precursors. It was concluded that adding SnO{sub 2}+Sb2O{sub 3} intermediate layer to Ti/PbO{sub 2} anodes could enhance the lifetime and stability of the anodes, thus its performance. 10 refs., 2 tabs.

  3. Phase diagrams of novel Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} quasi-ternary system following DTA and X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Barchiy, I.E.; Tatzkar, A.R. [Department of Chemistry, Uzhgorod National University, Pidgirna St., 46, Uzhgorod 88000 (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St., 50, Lviv 79010 (Ukraine); Plucinski, K., E-mail: kpluc2006@wp.pl [Electronics Department, Military University Technology, Warsaw, Kaliskiego 2, Warsaw 00-908 (Poland)

    2016-06-25

    Phase relation in the Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} quasiternary system were studied by the DTA and X-ray diffraction in combination with mathematical modeling. The phase diagrams of the Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2} and Tl{sub 2}SnSe{sub 3}–TlSbSe{sub 2} systems, the perspective views of the phase interaction in the ternary system, the liquidus surface projection, the isothermal section at 423 K were built for the first time. The Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2}–Tl{sub 2}SnSe{sub 3} system is of the invariant eutectic type and is characterized by the formation of limited solid solutions following initial ternary compounds. New complex compounds are not formed. - Highlights: • Two Tl{sub 4}SnSe{sub 4}–TlSbSe{sub 2},Tl{sub 2}SnSe{sub 3}–TlSbSe{sub 2} systems were explored. • Invariant processes in the ternary system were determined. • New complex compounds were not observed in ternary system.

  4. Improvement of the stability of TiSnSb anode under lithiation using SEI forming additives and room temperature ionic liquid/DMC mixed electrolyte

    International Nuclear Information System (INIS)

    Zhang, W.; Ghamouss, F.; Mery, A.; Lemordant, D.; Dedryvère, R.; Monconduit, L.; Martinez, H.

    2015-01-01

    Highlights: • Lithiation and delithiation of TiSnSb conversion anode material • Room temperature ionic liquid based electrolyte • Fluoroethylene carbonate SEI builder additives • XPS and electrochemical analysis of the anode/electrolyte interface -- Abstract: The electrochemical behavior and the stability under cycling of TiSnSb anode for Li-ion batteries were investigated in room temperature ionic liquids based electrolyte. X-ray photoelectron spectroscopy (XPS), cyclic voltammetry, and electrochemical impedance (EIS) measurements have been performed to study the formation of surface film on the TiSnSb anode. Surface analysis was performed by a combined XPS core peaks and quantification data analysis, to establish the main components of the solid electrolyte interphase film (SEI). The key observation is that the thickness and the chemical nature of the SEI layer is strongly related to the electrolyte formulation and the addition of SEI layer forming additives. Vinylene carbonate (VC) and fluoroethylene carbonate (FEC) were applied in order to improve the anode/electrolyte interface. From XPS, EIS results and galvanostatic cycling the role of additives and ionic liquids as an effective stability improver has been highlighted

  5. Spectroscopy of particle-phonon coupled states in $^{133}$Sb by the cluster transfer reaction of $^{132}$Sn on $^{7}$Li

    CERN Multimedia

    We propose to investigate, with MINIBALL coupled to T-REX, the one-valence-proton $^{133}$Sb nucleus by the cluster transfer reaction of $^{132}$Sn on $^{7}$Li. The excited $^{133}$Sb will be populated by transfer of a triton into $^{132}$Sn, followed by the emission of an $\\alpha$-particle (detected in T-REX) and 2 neutrons. The aim of the experiment is to locate states arising from the coupling of the valence proton of $^{133}$Sb to the collective low-lying phonon excitations of $^{132}$Sn (in particular the 3$^−$). According to calculations in the weak-coupling approach, these states lie in the 4$\\, - \\,$5 MeV excitation energy region and in the spin interval 1/2$\\, - \\,$ 19/2, i.e., in the region populated by the cluster transfer reaction. The results will be used to perform advanced tests of different types of nuclear interactions, usually employed in the description of particle-phonon coupled excitations. States arising from couplings of the proton with simpler core excitations, involving few nucleons...

  6. Syntheses and characterization of one-dimensional alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs)

    Energy Technology Data Exchange (ETDEWEB)

    Yohannan, Jinu P.; Vidyasagar, Kanamaluru, E-mail: kvsagar@iitm.ac.in

    2015-01-15

    Three new isostructural quaternary antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs) have been synthesized by using alkali metal thiosulfate flux and structurally characterized by X-ray diffraction. Their structures contain A{sup +} ions around the [Sb{sub 2}Sn{sub 3}S{sub 10}]{sup 2−} chains, which are built from SbS{sub 3} pyramids, SnS{sub 6} octahedra and SnS{sub 4} tetrahedra. Raman and Mössbauer spectroscopic measurements corroborate the oxidation states and coordination environments of Sb(III) and Sn(IV). All three compounds are wide band gap semiconductors. Potassium compound undergoes partial exchange with strontium, cadmium and lead ions. - Graphical abstract: Syntheses, crystal structure, spectroscopic and partial ion-exchange studies of new one-dimensional alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs) are described. - Highlights: • Syntheses of new alkali metal antimony(III) thiostannates(IV), A{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} (A=K, Rb, Cs). • Wide band gap semiconductors with one-dimensional structure. • Topotactic partial exchange of K{sup +} ions of K{sub 2}Sb{sub 2}Sn{sub 3}S{sub 10} with Sr{sup 2+}, Cd{sup 2+} and Pb{sup 2+} ions.

  7. Electrochemical Formation of Multilayer SnO2-Sb x O y Coating in Complex Electrolyte.

    Science.gov (United States)

    Maizelis, Antonina; Bairachniy, Boris

    2017-12-01

    The multilayer antimony-doped tin dioxide coating was obtained by cathodic deposition of multilayer metal-hydroxide coating with near 100-nm thickness layers on the alloy underlayer accompanied by the anodic oxidation of this coating. The potential regions of deposition of tin, antimony, tin-antimony alloy, and mixture of this metals and their hydroxides in the pyrophosphate-tartrate electrolyte were revealed by the cyclic voltammetric method. The possibility of oxidation of cathodic deposit consisting of tin and Sn(II) hydroxide compounds to the hydrated tin dioxide in the same electrolyte was demonstrated.The operations of alloy underlayer deposition and oxidation of multilayer metal-hydroxide coating were proposed to carry out in the diluted pyrophosphate-tartrate electrolyte, similar to the main electrolyte.The accelerated tests showed higher service life of the titanium electrode with multilayer antimony-doped tin dioxide coating compared to both electrode with single-layer electrodeposited coating and the electrode with the coating obtained using prolonged heat treatment step.

  8. Uniaxial Pressure Effect on the SdH Oscillations in Heavy-Fermion Semimetal CeRu4Sb12

    International Nuclear Information System (INIS)

    Saha, S. R.; Kobayashi, M.; Sugawara, H.; Namiki, T.; Abe, K.; Aoki, Y.; Sato, H.

    2003-01-01

    We report the first successful Shubnikov-de Haas (SdH) experiment under uniaxial pressure in the anomalous heavy-fermion semimetal CeRu 4 Sb 12 . The nature of the quantum oscillations in the magnetoresistance is found to be significantly sensitive to uniaxial pressure. The results reveal that the nearly spherical Fermi surface elongates along the direction of the uniaxial pressure. (author)

  9. High temperature neutron powder diffraction study of the Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases

    Energy Technology Data Exchange (ETDEWEB)

    Lemoine, Pierric, E-mail: pierric.lemoine@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Bourgès, Cédric; Barbier, Tristan [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France); Nassif, Vivian [CNRS Institut NEEL, F-38000 Grenoble (France); Université de Grenoble Alpes, Institut NEEL, F-38000 Grenoble (France); Cordier, Stéphane [Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, 263 Avenue du Général Leclerc, CS 74205, 35042 Rennes Cedex (France); Guilmeau, Emmanuel [Laboratoire CRISMAT, UMR-CNRS 6508, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex 04 (France)

    2017-03-15

    Ternary copper-containing sulfides Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} have attracted considerable interest since few years due to their high-efficiency conversion as absorbers for solar energy and promising thermoelectric materials. We report therein on the decomposition study of Cu{sub 12}Sb{sub 4}S{sub 13} and Cu{sub 4}Sn{sub 7}S{sub 16} phases using high temperature in situ neutron powder diffraction. Our results obtained at a heating rate of 2.5 K/min indicate that: (i) Cu{sub 12}Sb{sub 4}S{sub 13} decomposes above ≈792 K into Cu{sub 3}SbS{sub 3}, and (ii) Cu{sub 4}Sn{sub 7}S{sub 16} decomposes above ≈891 K into Sn{sub 2}S{sub 3} and a copper-rich sulfide phase of sphalerite ZnS-type structure with an assumed Cu{sub 3}SnS{sub 4} stoichiometry. Both phase decompositions are associated to a sulfur volatilization. While the results on Cu{sub 12}Sb{sub 4}S{sub 13} are in fair agreement with recent published data, the decomposition behavior of Cu{sub 4}Sn{sub 7}S{sub 16} differs from other studies in terms of decomposition temperature, thermal stability and products of reaction. Finally, the crystal structure refinements from neutron powder diffraction data are reported and discussed for the Cu{sub 4}Sn{sub 7}S{sub 16} and tetrahedrite Cu{sub 12}Sb{sub 4}S{sub 13} phases at 300 K, and for the high temperature form of skinnerite Cu{sub 3}SbS{sub 3} at 843 K. - Graphical abstract: In situ neutron powder diffraction data (heating rate of 2.5 K/min) indicates that (i) the ternary Cu{sub 12}Sb{sub 4}S{sub 13} phase is stable up to 792 K and decomposes at higher temperature into Cu{sub 3}SbS{sub 3} and Cu{sub 1.5}Sb{sub 0.5}S{sub 2}, and (ii) the Cu{sub 4}Sn{sub 7}S{sub 16} phase is stable up to 891 K and decomposes at higher temperature into Sn{sub 2}S{sub 3} and a cubic phase of sphalerite ZnS-type structure. Sulfur volatilization likely occurs in order to balance the overall stoichiometry.

  10. Layered Halide Double Perovskites Cs3+nM(II)nSb2X9+3n (M = Sn, Ge) for Photovoltaic Applications.

    Science.gov (United States)

    Tang, Gang; Xiao, Zewen; Hosono, Hideo; Kamiya, Toshio; Fang, Daining; Hong, Jiawang

    2018-01-04

    Over the past few years, the development of lead-free and stable perovskite absorbers with excellent performance has attracted extensive attention. Much effort has been devoted to screening and synthesizing this type of solar cell absorbers. Here, we present a general design strategy for designing the layered halide double perovskites Cs 3+n M(II) n Sb 2 X 9+3n (M = Sn, Ge) with desired photovoltaic-relevant properties by inserting [MX 6 ] octahedral layers, based on the principles of increased electronic dimensionality. Compared to Cs 3 Sb 2 I 9 , more suitable band gaps, smaller carrier effective masses, larger dielectric constants, lower exciton binding energies, and higher optical absorption can be achieved by inserting variable [SnI 6 ] or [GeI 6 ] octahedral layers into the [Sb 2 I 9 ] bilayers. Moreover, our results show that adjusting the thickness of inserted octahedral layers is an effective approach to tune the band gaps and carrier effective masses in a large range. Our work provides useful guidance for designing the promising layered antimony halide double perovskite absorbers for photovoltaic applications.

  11. Effect of Cr2O3 on the microstructure and non-ohmic properties of (Co, Sb)-doped SnO2 varistors

    International Nuclear Information System (INIS)

    Aguilar M, J. A.; Pech C, M. I.; Hernandez, M. B.; Rodriguez, E.; Garcia O, L.; Glot, A. B.

    2013-01-01

    The effect of Cr 2 O 3 addition on the physical characteristics, microstructure, and current-voltage properties of (Co-Sb)-doped SnO 2 varistors was investigated. SnO 2 -Co 3 O 4 -Sb 2 O 5 ceramics with additions of 0.0, 0.03, 0.05 and 0.07 mol % Cr 2 O 3 were sintered at 1350 C under ambient atmosphere and characterized micro structurally and electrically. The characterization by X-ray diffraction and scanning electron microscopy show that the microstructure remains as a single phase material with multimodal size distribution of SnO 2 grains. The greatest effect of Cr 2 O 3 additions is manifested in the electric breakdown field. Additions of high levels (0.07 and 0.05 %) of this oxide promote and increase of approximately 55% in this parameter compared to the Cr 2 O 3 -free sample. Another physical property is affected: the measured density values decreases as the Cr 2 O 3 content increases. A change in the nonlinearity coefficient value is produced only at the highest Cr 2 O 3 content while at intermediate levels there is not change at all. Consequently, when seeking high nonlinearity coefficients, intermediate levels of Cr 2 O 3 are not recommended. (Author)

  12. A first-principles study of the electronic and structural properties of Sb and F doped SnO{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Minjung; Scott Bobbitt, N. [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Marom, Noa [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States); Chelikowsky, James R. [Center for Computational Materials, Institute for Computational Engineering and Sciences, Departments of Physics and Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-01-28

    We examine the electronic properties of Sb and F doped SnO{sub 2} nanocrystals up to 2.4 nm in diameter. A real-space pseudopotential implementation of density functional theory is employed within the local density approximation. We calculate electron binding energies and dopant formation energies as function of nanocrystal size, dopant concentration, and dopant species. Structural changes for different dopant species are also investigated. Our study should provide useful information for the design of transparent conducting oxides at the nanoscale.

  13. First principles study of (Cd, Hg, In, Tl, Sn, Pb, As, Sb, Bi, Se) modified Pt(111), Pt(100) and Pt(211) electrodes as CO oxidation catalysts

    DEFF Research Database (Denmark)

    Tripkovic, Vladimir

    2015-01-01

    . The coverage dependence as a function of potential for ten different adatom species (Cd, Hg, In, Tl, Sn, Pb, As, Sb, Bi, Se) on bare and CO saturated Pt(111), Pt(100) and Pt(211) surfaces has been established by means of Density Functional Theory calculations. Most of the adatoms are very stable under standard......, given by the OH formation potentials from water, is dependent on the oxophilicity of the adatoms, and is found to scale almost inversely with the adatom stability. In electrolyte solutions saturated with CO, the stability reduces to roughly half of that on bare Pt surfaces. Irrespective of the CO...

  14. A first-principles study of the electronic and structural properties of Sb and F doped SnO2 nanocrystals

    International Nuclear Information System (INIS)

    Kim, Minjung; Scott Bobbitt, N.; Marom, Noa; Chelikowsky, James R.

    2015-01-01

    We examine the electronic properties of Sb and F doped SnO 2 nanocrystals up to 2.4 nm in diameter. A real-space pseudopotential implementation of density functional theory is employed within the local density approximation. We calculate electron binding energies and dopant formation energies as function of nanocrystal size, dopant concentration, and dopant species. Structural changes for different dopant species are also investigated. Our study should provide useful information for the design of transparent conducting oxides at the nanoscale

  15. Preparation, characterization, and application of Ti/TiO2-NTs/Sb-SnO2 electrode in photo-electrochemical treatment of industrial effluents under mild conditions.

    Science.gov (United States)

    Subba Rao, Anantha N; Venkatarangaiah, Venkatesha T

    2018-04-01

    Ti/TiO 2 -NTs/Sb-SnO 2 electrode was prepared by gradient pulsed electrodeposition, and its electrochemical properties were evaluated. The catalytic activity and reusability of the electrode were tested by electrochemical oxidation (EO) and photoelectrochemical oxidation (PEO) of organics present in textile industry wastewater (TWW) and coffee bean processing industry wastewater (CWW). COD removal of ~ 41% was achieved after 5-h electrolysis under a constant applied current density of 30 mA cm -2 for TWW and 50 mA cm -2 for CWW. Nearly 14 and 18% increment in COD removal was observed under PEO for TWW and CWW, respectively. The turbidity of TWW reduced from 15 to ~ 3 NTU and the turbidity of CWW reduced from 27 to ~ 3 NTU by both EO and PEO. The % COD removal observed after 5-h electrolysis remained consistent for 7 repeated cycles; however, the catalytic activity of the electrode reduced gradually. These results suggested that the Ti/TiO 2 -NTs/Sb-SnO 2 can be a potential electrode for the treatment of industrial wastewater.

  16. Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications

    Science.gov (United States)

    Prasad, K. Shyam; Rao, Ashok; Chauhan, Nagendra S.; Bhardwaj, Ruchi; Vishwakarma, Avinash; Tyagi, Kriti

    2018-02-01

    In this study, we report low and mid temperature range thermoelectric properties of Sb-substituted Cu2SnSe3 compounds. The Cu2Sn1- x Sb x Se3 (0 ≤ x ≤ 0.04) alloys were prepared using conventional solid-state reaction followed by spark plasma sintering. The crystal structure was characterized using XRD and it reveals that all the samples exhibit cubic structure with space group -4/3m. The electrical transport characteristics indicate degenerate semiconducting behavior. Electrical resistivity was found to follow small polaron hopping (SPH) model in the entire temperature range of investigation. The Seebeck coefficient data reveals that the majority of charge carriers are holes and the analysis of Seebeck coefficient data gives negative values of Fermi energy indicating that the Fermi energy is below the edge of valence band. The electronic contribution ( κ e) for total thermal conductivity is found to be less than 1%. The maximum ZT value of 0.64 is observed for the sample with x = 0.03 (at 700 K) which is approximately 2.3 times that of the pristine sample.

  17. Multielemental Determination of As, Bi, Ge, Sb, and Sn in Agricultural Samples Using Hydride Generation Coupled to Microwave-Induced Plasma Optical Emission Spectrometry.

    Science.gov (United States)

    Machado, Raquel C; Amaral, Clarice D B; Nóbrega, Joaquim A; Araujo Nogueira, Ana Rita

    2017-06-14

    A microwave-induced plasma optical emission spectrometer with N 2 -based plasma was combined with a multimode sample introduction system (MSIS) for hydride generation (HG) and multielemental determination of As, Bi, Ge, Sb, and Sn in samples of forage, bovine liver, powdered milk, agricultural gypsum, rice, and mineral fertilizer, using a single condition of prereduction and reduction. The accuracy of the developed analytical method was evaluated using certified reference materials of water and mineral fertilizer, and recoveries ranged from 95 to 106%. Addition and recovery experiments were carried out, and the recoveries varied from 85 to 117% for all samples evaluated. The limits of detection for As, Bi, Ge, Sb, and Sn were 0.46, 0.09, 0.19, 0.46, and 5.2 μg/L, respectively, for liquid samples, and 0.18, 0.04, 0.08, 0.19, and 2.1 mg/kg, respectively, for solid samples. The method proposed offers a simple, fast, multielemental, and robust alternative for successful determination of all five analytes in agricultural samples with low operational cost without compromising analytical performance.

  18. Analysis of the 4d7 (4f + 6p) and 4p54d9 configurations of Sn VII, Sb VIII and Te IX

    International Nuclear Information System (INIS)

    Azarov, V.I.; Joshi, Y.N.; Churilov, S.S.; Ryabtsev, A.N.

    1994-01-01

    The spectra of tin, antimony and tellerium were photographed in the 120-200 A region on 10.7 m and 3 m grazing incidence spectrographs using a triggered spark source. The 4d 8 -4d 7 (4f + 6p) + 4p 5 4d 9 transitions of Sn VII, Sb VIII and Te IX were investigated. In the Sn VII spectrum 109 new lines were classified in the 152-192 A region and 34 new levels were established, in the Sb VIII spectrum 78 new lines were classified in the 138-158 A region and 21 new levels were established, and in the Te IX 76 new lines were classified in the 121-139 A region and 21 new levels were established. Strong configuration interaction among the 4d 7 (np + mf), and 4p 5 4d 9 (n = 5, 6; m = 4, 5) configurations was observed. Least-squares-fitting (LSF) parametric calculations involving configuration interaction were carried out to interpret the observed spectra. (orig.)

  19. The Electrochemical Behavior of SnSb as an Anode for Li-ion Batteries Studied by Electrochemical Impedance Spectroscopy and Electron Microscopy

    International Nuclear Information System (INIS)

    Tesfaye, Alexander T.; Yücel, Yasemin D.; Barr, Maïssa K.S.; Santinacci, Lionel; Vacandio, Florence; Dumur, Frédéric; Maria, Sébastien; Monconduit, Laure; Djenizian, Thierry

    2017-01-01

    Highlights: •Electrochemical behavior of SnSb is investigated by EIS, SEM and TEM. •Formation of SEI and cracks occurs during cycling experiments. •The capacity fading as a result of the electrode modifications is discussed. -- Abstract: Evolution of the electrical and morphological properties of micron-sized SnSb has been investigated to understand the electrochemical behavior observed during cycling experiments. Electron microscopy techniques (scanning electron microscopy and transmission electron microscopy) and electrochemical impedance spectroscopy have been combined to evidence the electrode modifications and particularly the formation of a solid electrolyte interphase (SEI) layer. Evolution of the SEI resistance and the charge transfer resistance with the cell voltage can be explained by the electrolyte degradation and expansion/contraction of the electrode. Furthermore, we show that the SEI formation is not limited at the first discharge/charge of the battery. The continuous growth of the SEI layer up to 50 cycles associated to the electrode pulverization caused by the large volume variations are responsible for the capacity fading.

  20. An ab initio study on the structural, electronic and mechanical properties of quaternary full-Heusler alloys FeMnCrSn and FeMnCrSb

    Science.gov (United States)

    Erkişi, Aytaç

    2018-06-01

    The quaternary full Heusler alloys FeMnCrSn and FeMnCrSb, which have face-centred cubic (FCC) crystal structure and conform to ? space group with 216 space number, have been investigated using Generalised Gradient Approximation (GGA) in the Density Functional Theory (DFT) as implemented in VASP (Vienna Ab initio Simulation Package) software. These alloys are considered in ferromagnetic (FM) order. After the investigation of structural stability of these alloys, their mechanical and thermal properties and also electronic band structures have been examined. The calculated spin-polarised electronic band structures and total electronic density of states (DOS) within GGA approximation show that these alloys can exhibit both metallic and half-metallic characters in different structural phases. The calculated formation enthalpies and the plotted energy-volume graphs show that Type-III phase is most stable structural phase for these materials. Also, FeMnCrSb alloy in Type-I/Type-III phases and FeMnCrSn alloy in Type-III phase show half-metallic behaviour with integer total magnetic moments almost 2 and 1 μB per formula unit, respectively, since there are band gaps observed in spin-down states, whereas they have metallic behaviour in majority bands. Other structural phases of both systems are also metallic. Moreover, the calculated elastic constants and the estimated anisotropy shear factors indicate that these materials are stable mechanically in all of three phases except FeMnCrSn in Type-I phase that does not satisfy Born stability criteria in this phase and have high anisotropic behaviour.

  1. Uso de métodos químicos para la obtención de sensores de gas del sistema Sn-Sb

    Directory of Open Access Journals (Sweden)

    ALEJANDRA MONTENEGRO

    2007-01-01

    Full Text Available Los sensores de gas basados en óxidos semiconductores presentan un cambio en la resistencia cuando son expuestos a ciertos gases. El óxido de estaño, SnO2, es el compuesto más utilizado en la fabricación de sensores de gas, y con el fin de mejorar su eficiencia normalmente se le adicionan óxidos de paladio, bismuto, antimonio entre otros. Durante el desarrollo de este trabajo se realizó la síntesis de polvos cerámicos del sistema SnO2 –Sb2O3 utilizando los métodos de precipitación y precursor polimérico (Pechini. Los polvos cerámicos fueron caracterizados con ATD/TG, DRX y FTIR. Además, se muestra la microestructura obtenida por MEB y el comportamiento eléctrico de películas gruesas conformadas con los polvos cerámicos obtenidos sobre substratos de alúmina, determinando el cambio de la resistencia eléctrica del sistema en función del tiempo de exposición a una atmósfera (oxígeno o monóxido de carbono. El principal interés de este trabajo fue determinar el efecto del método de síntesis, así como el de la concentración de Sb2O3 como aditivo, sobre las propiedades sensoras de sistemas con base en SnO2.

  2. Heavy fermion Ce3Co4Sn13 compound under pressure

    International Nuclear Information System (INIS)

    Collave, J. R.; Borges, H. A.; Ramos, S. M.; Hering, E. N.; Fontes, M. B.; Baggio-Saitovitch, E.; Bittar, E. M.; Mendonça-Ferreira, L.; Pagliuso, P. G.

    2015-01-01

    The non-magnetic heavy fermion compound Ce 3 Co 4 Sn 13 was studied under pressure. We report single crystalline measurements of electrical resistivity as a function of temperature ρ(T) under pressure. Some characteristic features related to a structural transition (T S ), crystalline field effects (T CEF ), and a low temperature maximum (T max ), possibly connected simultaneously to the onset of Kondo lattice coherence and short range magnetic correlations, were identified in the ρ(T) data. A pressure-temperature phase diagram with T S and T max was constructed by mapping these features. Like for most Ce-based heavy fermion compounds, T max moves to higher temperatures with pressure, indicating that it is related to the Kondo energy scale, due to the increase of hybridization induced by pressure. On the other hand, T S , associated to a superlattice distortion and probably combined with a charge density wave transition, decreases as a function of pressure. However, differently from the Sr 3−x Ca x Ir 4 Sn 13 system, where a superlattice quantum phase transition is observed [L. E. Klintberg et al., Phys. Rev. Lett. 109, 237 008 (2012)], in Ce 3 Co 4 Sn 13 T S  ∼ 154 K, at ambient pressure (P = 0), seems to stabilize at around 143 K for P ≥ 19 kilobars. We also investigated ρ(T) in external magnetic fields, at P = 0. Negative magnetoresistance and increase of T max are observed, suggesting suppression of low temperature short range magnetic correlations

  3. The performance of Pt nanoparticles supported on Sb{sub 2}O{sub 5}.SnO{sub 2}, on carbon and on physical mixtures of Sb{sub 2}O{sub 5}.SnO{sub 2} and carbon for ethanol electro-oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira Neto, A.; Brandalise, M.; Dias, R.R.; Ayoub, J.M.S.; Silva, A.C.; Penteado, J.C.; Linardi, M.; Spinace, E.V. [Instituto de Pesquisas Energeticas e Nucleares, IPEN - CNEN/SP, Av. Prof. Lineu Prestes, 2242 - Cidade Universitaria - CEP 05508-900 Sao Paulo, SP (Brazil)

    2010-09-15

    Pt nanoparticles were supported on Sb{sub 2}O{sub 5}.SnO{sub 2} (ATO), on carbon and on physical mixtures of ATO and carbon by an alcohol-reduction process using ethylene glycol as reducing agent. The obtained materials were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Their performance for ethanol oxidation was investigated at room temperature by chronoamperometry and in a direct ethanol fuel cell (DEFC) at 100 C. Pt nanoparticles supported on a physical mixture of ATO and carbon showed a significant increase of performance for ethanol oxidation compared to Pt nanoparticles supported on ATO or on carbon. (author)

  4. Excimer laser processing of inkjet-printed and sputter-deposited transparent conducting SnO2:Sb for flexible electronics

    International Nuclear Information System (INIS)

    Cranton, Wayne M.; Wilson, Sharron L.; Ranson, Robert; Koutsogeorgis, Demosthenes C.; Chi Kuangnan; Hedgley, Richard; Scott, John; Lipiec, Stephen; Spiller, Andrew; Speakman, Stuart

    2007-01-01

    The feasibility of low-temperature fabrication of transparent electrode elements from thin films of antimony-doped tin oxide (SnO 2 :Sb, ATO) has been investigated via inkjet printing, rf magnetron sputtering and post-deposition excimer laser processing. Laser processing of thin films on both glass and plastic substrates was performed using a Lambda Physik 305i excimer laser, with fluences in the range 20-100 mJ cm -2 reducing sheet resistance from as-deposited values by up to 3 orders of magnitude. This is consistent with TEM analysis of the films that shows a densification of the upper 200 nm of laser-processed regions

  5. The role of specific features of the electronic structure in electrical resistivity of band ferromagnets Co2Fe Z ( Z = Al, Si, Ga, Ge, In, Sn, Sb)

    Science.gov (United States)

    Kourov, N. I.; Marchenkov, V. V.; Perevozchikova, Yu. A.; Weber, H. W.

    2017-05-01

    The electrical resistivity ρ( T) of the band ferromagnets Co2FeZ (where Z = Al, Si, Ga, Ge, In, Sn, and Sb are s- and p-elements of Mendeleev's Periodic Table) has been investigated in the temperature range 4.2 K < T < 1100 K. It has been shown that the dependences ρ( T) of these alloys in a magnetically ordered state at temperatures T < T C are predominantly determined by the specific features of the electronic spectrum in the vicinity of the Fermi level. The processes of charge carrier scattering affect the behavior of the electrical resistivity ρ( T) only in the vicinity of the Curie temperature T C and above, as well as in the low-temperature range (at T ≪ T C).

  6. Electrochemical evaluation of adsorption and oxidation of the carbon monoxide towards ordered intermetallic phases Pt-M (M=Mn, Pb, Sb e Sn); Avaliacao eletroquimica da adsorcao e oxidacao do monoxido de carbono sobre fases intermetalicas ordenadas Pt-M (M=Mn, Pb, Sb e Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Nicolai, A L; Miguel-Junior, E; Silva, R I.V. da; Angelo, A C.D. [UNESP, Bauru, SP (Brazil). Depto. de Quimica. Lab. de Eletrocatalise

    2004-07-01

    This paper presents the experimental results obtained from the electrochemical evaluation of Pt ordered intermetallic phases (PtMn, PtPb, PtSb, PtSn) as electrode materials towards the CO oxidation reaction. The intermetallics showed a higher performance than pure Pt in the same experimental conditions. PtSn has presented the highest performance among the evaluated materials. There was not observed a clear relationship between the electrocatalytic activity of the materials and their ability in producing oxygen species at lower anodic potentials, suggesting that surface electronic density and structural characteristics of the electrode surfaces must be the properties to be investigated in order to explain the obtained results. (author)

  7. Sequestration of Radionuclides and Heavy Metals by Hydroxyapatite Doped with Fe, Cu and Sn

    International Nuclear Information System (INIS)

    K.B. Helean; R.C. Moore

    2005-01-01

    Apatite, Ca 5 (PO 4 ) 3 (F,OH,Cl) (P6 3 /m, Z=2), is the most abundant phosphate mineral on Earth. The end-member hydroxyapatite, Ca 5 (PO 4 ) 3 OH (P2 1 /b), is the primary mineral component in bones and teeth and tends to scavenge and sequester heavy metals in the human body. Hydroxyapatite has also been shown to be effective at sequestering radionuclides and heavy metals in certain natural systems (Dybowska et al., 2004). Hydroxyapatite has been the focus of many laboratory studies and is utilized for environmental remediation of contaminated sites (Moore et al., 2002). The crystal structure of apatite tolerates a great deal of distortion caused by extensive chemical substitutions. Metal cations (e.g. REE, actinides, K, Na, Mn, Ni, Cu, Co, Zn, Sr, Ba, Pb, Cd, Fe) substitute for Ca, and oxyanions (e.g. AsO 4 3- , SO 4 2- , CO 3 2- , SiO 4 4- , CrO 4 2- ) replace PO 4 3- through a series of coupled substitutions that preserve electroneutrality. Owing to the ability of apatite to incorporate ''impurities'' (including actinides) gives rise to its proposed use as a waste form for radionuclides. Recent work at Sandia National Laboratory demonstrated that hydroxyapatite has a strong affinity for U, Pu, Np, Sr and Tc reduced from pertechnetate (TcO 4 - ) by SnCl 2 (Moore et al., 2002). Based on these earlier promising results, an investigation was initiated into the use of apatite-type materials doped with aliovalent cations including Fe, Cu and Sn as Tc-scavengers. Synthetic Fe and Cu-doped hydroxyapatite samples were prepared by precipitation of Ca, from Ca-acetate, and P, from ammonium phosphate. The Fe and Cu were introduced as chlorides into the Ca-acetate solution. Stannous chloride was used as a reducing agent and was apparently incorporated into the crystal structures of the hydroxyapatite samples in small, as yet undetermined quantities

  8. Epitaxial Sb-doped SnO{sub 2} and Sn-doped In{sub 2}O{sub 3} transparent conducting oxide contacts on GaN-based light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Min-Ying [Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 (United States); Bierwagen, Oliver, E-mail: bierwagen@pdi-berlin.de [Materials Department, University of California, Santa Barbara, CA 93106 (United States); Paul-Drude-Insitut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Speck, James S. [Materials Department, University of California, Santa Barbara, CA 93106 (United States)

    2016-04-30

    We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO{sub 2} (ATO) and (111)-oriented, cubic Sn-doped In{sub 2}O{sub 3} (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assisted molecular beam epitaxy (PAMBE). Both oxides form rotational domains. The in-plane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]|| ITO{sub Domain1}[‐ 211]|| ITO{sub Domain2}[‐ 1‐12]. A growth temperature as low as 600 °C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4 × 10{sup −} {sup 3} Ω cm) of the ATO. The current–voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga{sub 2}O{sub 3} interface layer. The ITO contact grown by PAMBE at 600 °C showed extremely low resistivity (10{sup −4} Ω cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. - Highlights: • Plasma-assisted molecular beam epitaxy of SnO{sub 2}:Sb (ATO) and In{sub 2}O{sub 3}:Sn (ITO) contacts • Working light emitting diodes processed with the ATO contact on the top p-GaN layer • Low growth temperature ensures low contact resistance (limiting interface reaction). • ITO showed significantly better structural and transport properties than ATO. • ATO showed higher optical transmission at short

  9. Microminiature Hall probes based on n-InSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52 T

    Energy Technology Data Exchange (ETDEWEB)

    Mironov, O.A.; Myronov, M.; Durov, S.; Drachenko, O.; Leotin, J

    2004-04-30

    Microminiature Hall probes with sensitive area down to 33x115 {mu}m and based on n-InSb/i-GaAs optimized Sn-doped MBE-grown heterostructures are reported. The 'metallurgical' thicknesses of the n-InSb epilayers lie in the range d{sup m}=1.1-10.5 {mu}m giving room-temperature mobilities of (9-15)x10{sup 3} cm{sup 2}/Vs with carrier densities of (0.96-2.56)x10{sup 18} cm{sup -3}. Characterization of the devices was performed by magnetotransport measurements in quasi-static and pulsed magnetic fields. In the temperature range 1.1-300 K and in magnetic fields up to 12 T (static) and up to 52 T (pulsed, {tau}=120 mS), transport measurements yield remarkable linearity of the Hall voltage up to 52 T and sensitivity, as well as demonstrating the high-temperature stability of the Hall voltage, the offset voltage and the device resistivity. No significant effect of the high current up to 150 mA on either the sensitivity or the resistivity is observed.

  10. Effect of Ca, Sr and Ba on the structure, morphology and electrical properties of (Co,Sb)-doped SnO{sub 2} varistors

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar-Martínez, J.A., E-mail: josue.aguilarm@uanl.mx [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, Centro de Investigación e Innovación en Ingeniería Aeronáutica (CIIIA), Carretera a Salinas Victoria km. 2.3, C.P. 66600 Apodaca, N.L. (Mexico); Rodríguez, Edén [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, Av. Universidad S/N, Cd. Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico); García-Villarreal, S.; Falcon-Franco, L. [Universidad Autónoma de Coahuila, Facultad de Metalurgia, Carr. 57, Km 4.5, C.P. 25710 Monclova, Coah. (Mexico); Hernández, M.B. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Mecánica y Eléctrica, Av. Universidad S/N, Cd. Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico)

    2015-03-01

    In this work, the effect of calcium (Ca), barium (Ba) and strontium (Sr) additions on the microstructure and electrical properties of SnO{sub 2}-Co{sub 3}O{sub 4}-Sb{sub 2}O{sub 5} ceramic varistors was investigated. It was found that the calcium addition promotes densification and grain growth. Ceramics with calcium addition exhibit the lowest electric field at a fixed current density (10{sup −3} A cm{sup −2}). The addition of strontium shows a similar effect on microstructure and current-voltage characteristics. However, barium addition causes porosity increase, grain size reduction, changes in the grain morphology (from approximately equiaxed to elongated grains) and the electric field at a fixed current density showed almost no change. Consequently, Ba-containing SnO{sub 2}-based ceramics cannot be considered as attractive candidates for low-voltage varistors. - Highlights: • The calcium and Strontium addition promotes densification and grain growth. • Barium addition causes porosity increase, grain size reduction and changes in the grain morphology. • Ceramics with calcium addition exhibit the lowest electric field. • Ceramics with calcium addition can be considered as promising materials for low-voltage varistors.

  11. Thermoelectric properties of p-type Ag{sub 1−x}(Pb{sub 1−y}Sn{sub y}){sub m}Sb{sub 1−z}Te{sub m+2}

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Kyunghan [Department of Chemistry, Northwestern University, Evanston, IL 60208 (United States); Center for Nanoparticle Research, Institute for Basic Science, (IBS), Seoul 151-742 (Korea, Republic of); Kong, Huijun; Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, Evanston, IL 60208 (United States)

    2016-10-15

    The thermoelectric properties of Ag{sub 1−x}(Pb{sub 1−y}Sn{sub y}){sub m}Sb{sub 1−z}Te{sub m+2} (4≤m≤16, −0.1≤x≤0.3, 1/3≤y≤2/3, 0.2≤z≤0.4; Lead Antimony Silver Tellurium Tin, LASTT-m) compositions were investigated in the temperature range of 300 to ~670 K. All samples crystallize in the average NaCl-type structure without any noticeable second phase and exhibit very narrow bandgaps of <0.1 eV. We studied a range of m values, silver concentrations (x), Pb/Sn ratios (y), and antimony concentrations (z) to determine their effects on the thermoelectric properties. The samples were investigated as melt grown polycrystalline ingots. Varying the Ag contents, the Pb/Sn ratios, and the Sb contents off-stoichiometry allowed us to control the electrical conductivity, the Seebeck coefficient, and the thermal conductivity. The electrical conductivity tends to decrease with decreasing m values. The highest ZT of ~1.1 was achieved at ~660 K for Ag{sub 0.9}Pb{sub 5}Sn{sub 5}Sb{sub 0.8}Te{sub 12} mainly due to the very low lattice thermal conductivity of ~0.4 W/(m K) around 660 K. Also, samples with charge-balanced stoichiometries, Ag(Pb{sub 1−y}Sn{sub y}){sub m}SbTe{sub m+2}, were studied and found to exhibit a lower power factor and higher lattice thermal conductivity than the Ag{sub 1−x}(Pb{sub 1−y}Sn{sub y}){sub m}Sb{sub 1−z}Te{sub m+2} compositions. - Graphical abstract: The Ag{sub 1−x}(Pb{sub 1−y}Sn{sub y}){sub m}Sb{sub 1−z}Te{sub m+2} system defines a complex and flexible class of tunable thermoelectric class of materials with high performance.

  12. Application of oxide fine-mesh electrodes composed of Sb-SnO2 for the electrochemical oxidation of Cibacron Marine FG using an SPE filter-press reactor

    International Nuclear Information System (INIS)

    Da Silva, Leonardo M.; Gonçalves, Ismael C.; Teles, José J.S.; Franco, Débora V.

    2014-01-01

    Highlights: • Oxide fine-mesh electrodes composed of Sb-SnO 2 (OFM-Sb-SnO 2 ) were fabricated and applied to the decolourisation and mineralisation of dye solutions using an SPE filter-press reactor. • An electrode mechanism was proposed for the irreversible parallel reactions comprising the oxygen evolution reaction (OER) and the electrochemical advanced oxidation process (EAOP) during the electrolysis of electrolyte-free dye solutions. • The reduction in current efficiency for the OER during the oxidation of Cibacron Marine FG (CMFG) increased the electrode stability. - Abstract: Oxide fine-mesh electrodes composed of tin dioxide doped with antimony (OFM-Sb-SnO 2 ), which had different percentages of Sb, were prepared using the thermal decomposition method on a stainless steel fine-mesh support for application in a solid polymer electrolyte (SPE) filter-press reactor. The electrochemical oxidation of Cibacron ® Marine FG (CMFG) was carried out during recirculation through a plug-flow reactor, using electrolyte-free dye solutions. An influence of the Sb content on the electrochemical oxidation of CMFG was verified. The highest combustion rate of CMFG was obtained using an electrode containing 6.57 mol% Sb. Studies were carried out as a function of the initial dye concentration (IDC) and the applied current density (j) for this particular electrode composition. It was verified that the decolourisation and mineralisation reactions were affected considerably by IDC and j. In trying to interpret the experimental findings, an electrode mechanism was proposed for the irreversible parallel reactions comprising the oxygen evolution reaction (OER) and the advanced oxidation process (EAOP). The instantaneous current efficiency (ICE) for the mineralisation reaction was calculated for the different cases using the average mass-transport coefficient () and the initial limiting current (j L 0 ) values. The energy consumption (EC) was also calculated for the

  13. Sequestration of radionuclides and heavy metals by hydroxyapatite doped with Fe, Cu and Sn

    International Nuclear Information System (INIS)

    Neidel, Linnah L.; Moore, Robert Charles; Salas, Fred; Grouios, Fotini; Holt, Kathleen Caroline; Helean, Katheryn B.

    2005-01-01

    Apatite, Ca 5 (PO 4 ) 3 (F,OH,Cl)(P6 3 /m, Z=2), is the most abundant phosphate mineral on Earth. The end-member hydroxyapatite, Ca 5 (PO 4 ) 3 OH(P2 1 /b), is the primary mineral component in bones and teeth and tends to scavenge and sequester heavy metals in the human body. Hydroxyapatite has also been shown to be effective at sequestering radionuclides and heavy metals in certain natural systems (Dybowska et al., 2004). Hydroxyapatite has been the focus of many laboratory studies and is utilized for environmental remediation of contaminated sites (Moore et al., 2002). The crystal structure of apatite tolerates a great deal of distortion caused by extensive chemical substitutions. Metal cations (e.g. REE, actinides, K, Na, Mn, Ni, Cu, Co, Zn, Sr, Ba, Pb, Cd, Fe) substitute for Ca, and oxyanions (e.g. AsO 4 3- , SO 4 2- , CO 3 2- , SiO 4 4- , CrO 4 2- ) replace PO 4 3- through a series of coupled substitutions that preserve electroneutrality. Owing to the ability of apatite to incorporate 'impurities'(including actinides) gives rise to its proposed use as a waste form for radionuclides. Recent work at Sandia National Laboratory demonstrated that hydroxyapatite has a strong affinity for U, Pu, Np, Sr and Tc reduced from pertechnetate (TcO 4 - ) by SnCl 2 (Moore et al., 2002). Based on these earlier promising results, an investigation was initiated into the use of apatite-type materials doped with aliovalent cations including Fe, Cu and Sn as Tc-scavengers. Synthetic Fe and Cu-doped hydroxyapatite samples were prepared by precipitation of Ca, from Ca-acetate, and P, from ammonium phosphate. The Fe and Cu were introduced as chlorides into the Ca-acetate solution. Stannous chloride was used as a reducing agent and was apparently incorporated into the crystal structures of the hydroxyapatite samples in small, as yet undetermined quantities.

  14. Zintl-phases with layer anions: preparation and crystal structures of the isotypic compounds SrSn sub 2 As sub 2 and Sr sub 0. 87 Ba sub 0. 13 Sn sub 2 As sub 2 and a single crystal structure determination of KSnSb. Zintl-Phasen mit Schichtanionen: Darstellung und Kristallstrukturen der isotypen Verbindungen SrSn sub 2 As sub 2 und Sr sub 0,87 Ba sub 0,13 Sn sub 2 As sub 2 sowie eine Einkristallstrukturbestimmung von KSnSb

    Energy Technology Data Exchange (ETDEWEB)

    Eisenmann, B; Klein, J [Abt. 2 fuer Anorganische Chemie, Technische Hochschule Darmstadt (Germany)

    1991-06-01

    The metallic reflecting compounds SrSn{sub 2}As{sub 2} and Sr{sub 0.87}Ba{sub 0.13}Sn{sub 2}As{sub 2} were prepared from the melt, they crystallize in the trigonal rhombohedral system (space group R3m, Z = 3) with lattice constants see ''Inhaltsuebersicht''. In the crystal structure of the isotypic compounds threebonded Sn atoms and threebonded As atoms together form puckered layers which are isostructural to grey As. The mean values of the bond lengths Sn -- As are 277.6 pm (SrSn{sub 2}As{sub 2}) and 279.1 pm (Sr{sub 0.87}Ba{sub 0.13}Sn{sub 2}As{sub 2}) resp. Along (001) the alkaline earth atoms occupy the octahedral interstices of As atoms between each second SnAs layer. The single crystal structure determination of KSnSb confirms the results of the X-ray powder analysis, but leads to slightly different values for the bond lengths.

  15. Preparation of catalysts PtSb{sub 2}O{sub 5}.SnO{sub 2} supported on carbon and ATO using the alcohol reduction method for electrochemical oxidation of ethanol; Preparacao de eletrocatalisadores PtSb{sub 2}O{sub 5}.SnO{sub 2} suportados em carbono e ATO pelo metodo da reducao por alcool para oxidacao eletroquimica do etanol

    Energy Technology Data Exchange (ETDEWEB)

    Ayoub, Jamil Mahmoud Said

    2013-06-01

    Pt Sn/C-ATO electrocatalysts with different Pt:Sn atomic ratios (90:10, 70:30 and 50:50) were prepared in a single step by an alcohol-reduction process using H{sub 2}PtCl{sub 6}.6H{sub 2}O and SnCl{sub 2}.2H{sub 2}O as metal sources and ethylene glycol as solvent and reducing agent and a physical mixture of carbon Vulcan XC72 (85 wt%) and Sb{sub 2}O{sub 5}.SnO{sub 2} (15 wt%) as support (C-ATO). The obtained materials were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The catalytic activity for ethanol electro-oxidation in acid medium was investigated by cyclic voltammetry and chronoamperometry and in single direct ethanol fuel cell (DEFC). XRD analyses showed that Pt(FCC), SnO{sub 2}, carbon and ATO phases coexist in the obtained materials. The electrochemical studies showed that PtSn/C-ATO electrocatalysts were more active for ethanol electro-oxidation than PtSn/C electrocatalyst. The experiments at 100 deg C on a single DEFC showed that the power density of the cell using Pt Sn/C-ATO (90:10) was nearly 100% higher than the one obtained using Pt Sn/C (50:50). FTIR measurements showed that the addition of ATO to Pt Sn/C favors the formation of acetic acid as a product while for PtSn/C acetaldehyde was the principal product formed. (author)

  16. Structural stability of ternary C22–Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and C22–Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Colinet, Catherine, E-mail: ccolinet@simap.grenoble-inp.fr [Science et Ingénierie des Matériaux et Procédés, Grenoble INP, UJF, CNRS, 38402 Saint Martin d’Hères, Cedex (France); Crivello, Jean-Claude [ICMPE-CMTR, CNRS UMR-7182, 2-8 rue Henri Dunant, 94320 Thiais (France); Tedenac, Jean-Claude [Institut de Chimie Moléculaire et des Matériaux I.C.G., UMR-CNRS 5253, Université Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex 5 (France)

    2013-09-15

    The crystal and electronic structures, and the thermodynamic properties of Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) ternary compounds in the Fe{sub 2}P-type structure have been investigated by means of first principle calculations. The calculated structural parameters are in good agreement with the experimental data. The total electronic densities of states as well as the Bader charges of the atoms have been computed. Both electronic and size effects allow to explain the stability of the ternary Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te) and Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu) compounds. - Graphical abstract: Valence charge electronic localization function (ELF) calculated for Zr{sub 6}Sb{sub 2}Co compound. Display Omitted - Highlights: • Structural stability of Zr{sub 6}X{sub 2}T′ compounds (X: p element, T′: late transition metal) in the Fe{sub 2}P-type structure. • First principles calculation of lattice parameters and enthalpies of formation. • Electronic densities of state in the series Zr{sub 6}Sn{sub 2}T′ (T′=Fe, Co, Ni, Cu). • Electronic densities of state in the series Zr{sub 6}X{sub 2}Co (X=Al, Ga, Sn, As, Sb, Bi, Te)

  17. Effects of Rh on the thermoelectric performance of the p-type Zr0.5Hf0.5Co1-xRhxSb0.99Sn0.01 half-Heusler alloys

    International Nuclear Information System (INIS)

    Maji, Pramathesh; Takas, Nathan J.; Misra, Dinesh K.; Gabrisch, Heike; Stokes, Kevin; Poudeu, Pierre F.P.

    2010-01-01

    We show that Rh substitution at the Co site in Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 (0≤x≤1) half-Heusler alloys strongly reduces the thermal conductivity with a simultaneous, significant improvement of the power factor of the materials. Thermoelectric properties of hot-pressed pellets of several compositions with various Rh concentrations were investigated in the temperature range from 300 to 775 K. The Rh 'free' composition shows n-type conduction, while Rh substitution at the Co site drives the system to p-type semiconducting behavior. The lattice thermal conductivity of Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 alloys rapidly decreased with increasing Rh concentration and lattice thermal conductivity as low as 3.7 W/m*K was obtained at 300 K for Zr 0.5 Hf 0.5 RhSb 0.99 Sn 0.01 . The drastic reduction of the lattice thermal conductivity is attributed to mass fluctuation induced by the Rh substitution at the Co site, as well as enhanced phonon scattering at grain boundaries due to the small grain size of the synthesized materials. - Graphical abstract: Significant reduction of the lattice thermal conductivity with increasing Rh concentration in the p-type Zr 0.5 Hf 0.5 Co 1-x Rh x Sb 0.99 Sn 0.01 half-Heusler materials prepared by solid state reaction at 1173 K.

  18. The crystal structure of franckeite, Pb.sub.21.7./sub.Sn.sub.9.3./sub.Fe.sub.4.0./sub.Sb.sub.8.1./sub.S.sub.56.9./sub..

    Czech Academy of Sciences Publication Activity Database

    Makovicky, E.; Petříček, Václav; Dušek, Michal; Topa, D.

    2011-01-01

    Roč. 96, 11-12 (2011), s. 1686-1702 ISSN 0003-004X Grant - others:AV ČR(CZ) AP0701 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : franckeite * Pb-Sn-Sb-Fe sulfide * modulated layer-misfit crystal structure * 2D–non-commensurate layer structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.169, year: 2011

  19. Effect of high-temperature quenching on the magnetostructural transformations and the long-range atomic order of Ni–Mn–Sn and Ni–Mn–Sb metamagnetic shape memory alloys

    International Nuclear Information System (INIS)

    Sánchez-Alarcos, V.; Pérez-Landazábal, J.I.; Recarte, V.; Lucia, I.; Vélez, J.; Rodríguez-Velamazán, J.A.

    2013-01-01

    The influence of high-temperature thermal treatments on the martensitic transformation and the magnetic properties of Ni–Mn–Sn and Ni–Mn–Sb metamagnetic shape memory alloys have been investigated by calorimetric and magnetic measurements. Contrary to Ni–Mn–Ga and Ni–Mn–In systems, the martensitic transformation and Curie temperatures of Ni–Mn–Sn and Ni–Mn–Sb alloys are found to be unaffected by the increasing quenching temperature. Neutron diffraction measurements confirm the null effect of quenching on the next-nearest-neighbors atomic order due to the negligible L2 1 atomic disorder achieved with high-temperature annealings. The analysis of long-range order also suggests that no L2 1 –B2 ordering transition takes place in the studied alloys, thus indicating an unusually high stability of the L2 1 structure. The obtained results show that the magnetostructural properties of Ni–Mn–Sn and Ni–Mn–Sb alloys cannot be properly tuned by means of standard thermal treatments

  20. Spark plasma-sintered Sn-based intermetallic alloys and their Li-storage studies

    CSIR Research Space (South Africa)

    Nithyadharseni, P

    2016-06-01

    Full Text Available In the present study, SnSb, SnSb/Fe, SnSb/Co, and SnSb/Ni alloy powders processed by co-precipitation were subjected to spark plasma-sintering (SPS) at 400 °C for 5 min. The compacts were structurally and morphologically characterized by X...

  1. Unveiling the chemical and morphological features of Sb:SnO2 nanocrystals by the combined use of HRTEM and Ab Initio surface energy calculations

    International Nuclear Information System (INIS)

    Stroppa, Daniel G.; Montoro, Luciano A.; Ramirez, Antonio J.; Beltran, Armando; Andres, Juan; Conti, Tiago G.; Silva, Rafael O. da; Longo, Elson; Leite, Edson R.

    2009-01-01

    Modeling of nanocrystals supported by advanced morphological and chemical characterization is a unique tool for the development of reliable nanostructured devices, which depends on the ability to synthesize and characterize material on the atomic scale. Among the most significant challenges in nanostructural characterization is the evaluation of crystal growth mechanisms and their dependence on the shape of nanoparticles and the distribution of doping elements. This work presents a new strategy to characterize nanocrystals, applied here to antimony-doped tin oxide (Sb-SnO 2 ) (ATO) by the combined use of experimental and simulated high-resolution transmission electron microscopy (HRTEM) images and surface energy ab initio calculations. The results show that the Wulff construction can not only describe the shape of nanocrystals as a function of surface energy distribution but also retrieve quantitative information on dopant distribution by the dimensional analysis of nanoparticle shapes. In addition, a novel three-dimensional evaluation of an oriented attachment growth mechanism is provided in the proposed methodology. This procedure is a useful approach for faceted nanocrystal shape modeling and indirect quantitative evaluation of dopant spatial distribution, which are difficult to evaluate by other techniques. (author)

  2. Electrochemical degradation of triazole fungicides in aqueous solution using TiO2-NTs/SnO2-Sb/PbO2 anode: Experimental and DFT studies

    International Nuclear Information System (INIS)

    Han, Weiqing; Zhong, Congqiang; Liang, Linyue; Sun, Yunlong; Guan, Ying; Wang, Lianjun; Sun, Xiuyun; Li, Jiansheng

    2014-01-01

    Triazole fungicides (TFs) are toxic and bio-refractory contaminants widely spread in environment. This study investigated electrochemical degradation of TFs in aqueous solution at TiO 2 -NTs/SnO 2 -Sb/PbO 2 anode with particular attention to the effect of molecular structure. Three TFs with triazole ring in one biologically treated water including tricyclazole (TC), 1H-1,2,4-triazole (Tz) and propiconazole (PPC) were selected as the target compounds. Results of bulk electrolysis showed that degradation of all TFs was fit to a pseudo first-order equation. The three compounds were degraded with the following sequence: PPC > TC> Tz in terms of their rates of oxidation. Quantum chemical calculation using the density function theory (DFT) method was combined with experimental results to describe the degradation sequence of TFs. Atom charge was calculated by DFT method and active sites of TFs were identified respectively. Analysis of intermediates by GC-MS and LC-(ESI)-MS/MS showed agreement with calculation results. In addition, the acute toxicity of TC and PPC treated solution significantly decreased after treatment by electrochemical oxidation

  3. Current-voltage characteristics of SnO2-Co3O4-Cr2O3-Sb2O5 ceramics

    International Nuclear Information System (INIS)

    Aguilar-Martinez, J A; Glot, A B; Gaponov, A V; Hernandez, M B; Guerrero-Paz, J

    2009-01-01

    The effect of mechanical treatment in a planetary mill on the microstructure and electrical properties of tin dioxide based varistor ceramics in the system SnO 2 -Co 3 O 4 -Cr 2 O 3 -Sb 2 O 5 sintered in the range 1150-1450 0 C was studied. The mechanical treatment leads to an increase in shrinkage, decrease in porosity, decrease in sample diameter, change in colour of the sintered samples from grey to black and enhancement of nonlinearity. For the sample sintered at 1350 0 C the mechanical treatment enhances the nonlinearity coefficient from 11 to 31 and decreases the electric field E 1 (at 10 -3 A cm -2 ) from 3500 to 2800 V cm -1 . The observed changes in physical properties are explained in terms of an additional size reduction of oxide particles and a better mixing of oxide powder followed by the formation of potential barriers at the grain boundaries throughout the whole sample. In spite of the low porosity, the low-field electrical conductivity of mechanically treated ceramics is significantly increased with the growth of relative humidity. A higher humidity sensitivity is found for mechanically treated ceramics with higher barrier height and higher nonlinearity coefficient.

  4. Structural complexity and thermoelectric properties of quaternary and quinary tellurides (Ge{sub x}Sn{sub 1-x}){sub 0.8}(In{sub y}Sb{sub 1-y}){sub 0.13}Te with 0 ≤ x,y ≤ 1

    Energy Technology Data Exchange (ETDEWEB)

    Neudert, Lukas; Scheel, Manuel [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Schwarzmueller, Stefan; Welzmiller, Simon; Oeckler, Oliver [Institut fuer Mineralogie, Kristallographie und Materialwissenschaft, Fakultaet fuer Chemie und Mineralogie, Universitaet Leipzig (Germany)

    2017-12-13

    Starting from stoichiometric mixtures of the elements, quaternary and quinary solid solutions (Ge{sub x}Sn{sub 1-x}){sub 0.8}(In{sub y}Sb{sub 1-y}){sub 0.13}Te were obtained. Concerning the ratio Ge/Sn and Sb/In, respectively, lattice parameters of the metastable phases with rocksalt-type average structures approximately obey Vegard's law. Stable phases correspond to a disordered rocksalt type at high temperature and to trigonal layered structures with van der Waal gaps at lower temperature as shown by temperature-dependent powder X-ray diffraction combined with TEM, which reveals layer-like vacancy ordering, whose extent depends on composition and thermal treatment. In the long-periodically ordered model compounds 21R-Ge{sub 0.5}Sn{sub 0.5}InSbTe{sub 4} and 9P-GeSnInSbTe{sub 5} studied by resonant scattering data at K-absorption edges, Sb and Sn concentrate near the van der Waals gaps. Compared to Ge{sub 0.8}Sb{sub 0.13}Te and Sn{sub 0.8}Sb{sub 0.13}Te, the simultaneous presence of In and Sn combines increased electrical conductivity with low thermal conductivity and enhanced thermoelectric properties in certain temperature ranges. Phase transitions correlate with changes of the thermoelectric properties. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Distribution of impurity states and charge transport in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yuanfeng; Makongo, Julien P.A. [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Page, Alexander [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Sahoo, Pranati [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Stokes, Kevin [The Advanced Materials Research Institute, Department of Physics, University of New Orleans, New Orleans, LA 70148 (United States); Poudeu, Pierre F.P., E-mail: ppoudeup@umich.edu [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)

    2016-02-15

    Energy filtering of charge carriers in a semiconducting matrix using atomically coherent nanostructures can lead to a significant improvement of the thermoelectric figure of merit of the resulting composite. In this work, several half-Heusler/full-Heusler (HH/FH) nanocomposites with general compositions Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (0≤x≤0.15 and y=0.005, 0.01 and 0.025) were synthesized in order to investigate the behavior of extrinsic carriers at the HH/FH interfaces. Electronic transport data showed that energy filtering of carriers at the HH/FH interfaces in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} samples strongly depends on the doping level (y value) as well as the energy levels occupied by impurity states in the samples. For example, it was found that carrier filtering at HH/FH interfaces is negligible in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (y=0.01 and 0.025) composites where donor states originating from Sb dopant dominate electronic conduction. However, we observed a drastic decrease in the effective carrier density upon introduction of HH/FH interfaces for the mechanically alloyed Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 0.995}Sb{sub 0.005} samples where donor states from unintentional Fe impurities contribute the largest fraction of conduction electrons. This work demonstrates the ability to synergistically integrate the concepts of doping and energy filtering through nanostructuring for the optimization of electronic transport in semiconductors. - Graphical abstract: Electronic transport in semiconducting half-Heusler (HH) matrices containing full-Heusler (FH) nanoinclusions strongly depends on the energy distribution of impurity states within the HH matrix with respect to the magnitude of the potential energy barrier at the HH/FH interfaces. - Highlights: • Coherent nanostructures enhanced thermoelectric behavior of half-Heusler alloys. • Nanostructures act as energy filter of

  6. Desenvolvimento do pigmento condutor SnO2 -Sb2O3 e sua aplicação em vidrados semicondutores Development of a SnO2 -Sb2O3 conductor pigment and its applications in semiconductor glazes

    Directory of Open Access Journals (Sweden)

    R. Aguiar

    2004-06-01

    Full Text Available Esmaltes semicondutores são utilizados no recobrimento de isoladores elétricos para evitar descargas superficiais nos isoladores, associadas a grandes diferenças de potencial, proporcionando uma melhora no desempenho sob poluição ambiental. Como os vidrados utilizados nas indústrias cerâmicas são isolantes, uma maneira de torná-los semicondutores é adicionando óxidos condutores. Misturou-se ao esmalte porcentagens variadas do pigmento condutor SnO2 dopado com 5% de Sb2O3. O esmalte foi aplicado sobre peças de porcelana a verde e queimado a 1250 ºC. Por microscopia eletrônica de varredura verificou-se que a concentração de pigmento na superfície das amostras é baixa e não influencia a condutividade elétrica. Na fratura, a porcentagem de pigmento ficou próxima de 35%. Assim, a superfície ficou com aspecto visual de ótima qualidade. A resistividade elétrica ocorreu pelo interior do vidrado, obtendo-se valores próximos de 10(4 Ohm.m.Semiconductor glazes are employed on electrical insulators to avoid surface discharge under conditions of intense electric fields, providing better performance in polluted environments. Semiconductor enamels are of great interest for electrical insulator coatings to avoid surface discharges, related to large potential differences. This enhances the performance of the insulator under polluted environments. Glazes used in ceramic industries are not conductive. The addition of conductive oxides to the glaze composition results in a semiconductor enamel. Sb2O3-doped SnO2 was mixed with the enamel in different concentrations. The resulting enamel was applied over green porcelain and fired at 1250 ºC. Scanning electron microscopy characterization was performed and it was verified that the pigment concentration on the surface is low and does not affect the electrical conductivity. The pigment concentration on the fracture surface is approximately 35%. The insulator surface presents a high quality

  7. Heavy fermion Ce{sub 3}Co{sub 4}Sn{sub 13} compound under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Collave, J. R.; Borges, H. A. [Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, 22453-900, Rio de Janeiro, RJ (Brazil); Ramos, S. M.; Hering, E. N. [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 38054, Grenoble (France); Fontes, M. B.; Baggio-Saitovitch, E.; Bittar, E. M., E-mail: bittar@cbpf.br [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, 22290-180, Rio de Janeiro, RJ (Brazil); Mendonça-Ferreira, L. [Centro de Ciências Naturais e Humanas, Universidade Federal do ABC, 09210-170, Santo André, SP (Brazil); Pagliuso, P. G. [Instituto de Física “Gleb Wataghin,” UNICAMP, Campinas, SP 13083-859 (Brazil)

    2015-05-07

    The non-magnetic heavy fermion compound Ce{sub 3}Co{sub 4}Sn{sub 13} was studied under pressure. We report single crystalline measurements of electrical resistivity as a function of temperature ρ(T) under pressure. Some characteristic features related to a structural transition (T{sub S}), crystalline field effects (T{sub CEF}), and a low temperature maximum (T{sub max}), possibly connected simultaneously to the onset of Kondo lattice coherence and short range magnetic correlations, were identified in the ρ(T) data. A pressure-temperature phase diagram with T{sub S} and T{sub max} was constructed by mapping these features. Like for most Ce-based heavy fermion compounds, T{sub max} moves to higher temperatures with pressure, indicating that it is related to the Kondo energy scale, due to the increase of hybridization induced by pressure. On the other hand, T{sub S}, associated to a superlattice distortion and probably combined with a charge density wave transition, decreases as a function of pressure. However, differently from the Sr{sub 3−x}Ca{sub x}Ir{sub 4}Sn{sub 13} system, where a superlattice quantum phase transition is observed [L. E. Klintberg et al., Phys. Rev. Lett. 109, 237 008 (2012)], in Ce{sub 3}Co{sub 4}Sn{sub 13} T{sub S} ∼ 154 K, at ambient pressure (P = 0), seems to stabilize at around 143 K for P ≥ 19 kilobars. We also investigated ρ(T) in external magnetic fields, at P = 0. Negative magnetoresistance and increase of T{sub max} are observed, suggesting suppression of low temperature short range magnetic correlations.

  8. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    OpenAIRE

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-?m line width, 9-?m pitch, and 6-?m height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed...

  9. Nanostructuring and high thermoelectric efficiency in p-type Ag(Pb{sub 1-y}Sn{sub y}){sub m}SbTe{sub 2{sub +m}}

    Energy Technology Data Exchange (ETDEWEB)

    Androulakis, J; Hsu, K F; Pcionek, R; Kanatzidis, M G [Department of Chemistry, Michigan Sate University, East Lansing, MI 48824-1793 (United States); Kong, H; Uher, C [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); D' Angelo, J J; Downey, A; Hogan, T [Electrical and Computer Engineering Department, Michigan State University, East Lansing, MI 48824-1226 (United States)

    2006-05-02

    The p-type Ag(Pb{sub 1-y}Sn{sub y}){sub m}SbTe{sub 2{sub +m}} materials shown in the figure demonstrate promising thermoelectric properties that are controlled with the parameters y and m. They can reach a maximum figure of merit of {proportional_to} 1.45 at 630 K. This surpasses the figure of merit of the present state-of-the-art p-type materials such as TAGS (1.2) and PbTe (0.8) at comparable temperatures. (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  10. The effect of the pairing interaction on the energies of isobar analogue resonances in {sup 112-124}Sb and isospin admixture in {sup 100-124}Sn isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Babacan, Tahsin [Department of Physics, Celal Bayar University, Manisa (Turkey); Salamov, Djavad [Department of Physics, Anadolu University, Eskisehir (Turkey); Kuecuekbursa, Atalay [Department of Physics, Dumlupinar University, Kuetahya (Turkey); Babacan, Halil [Department of Physics, Celal Bayar University, Manisa (Turkey); Maras, Ismail [Department of Physics, Celal Bayar University, Manisa (Turkey); Aygoer, Hasan A [Department of Physics, Celal Bayar University, Manisa (Turkey); Uenal, Arslan [Department of Physics, Dumlupinar University, Kuetahya (Turkey)

    2004-06-01

    In the present study, the effect of the pairing interaction and the isovector correlation between nucleons on the properties of the isobar analogue resonances (IAR) in {sup 112-124}Sb isotopes and the isospin admixture in {sup 100-124}Sn isotopes is investigated within the framework of the proton-neutron quasi-particle random phase approximation (pnQRPA). The form of the interaction strength parameter is related to the shell-model potential by restoring the isotopic invariance of the nuclear part of the total Hamiltonian. In this respect, the isospin admixtures in the {sup 100-124}Sn isotopes are calculated, and the dependence of the differential cross section and the volume integral J{sub F} for the Sn({sup 3}He,t)Sb reactions at E({sup 3}He) =200 MeV occurring by the excitation of IAR on mass number A is examined. Our results show that the calculated value for the isospin mixing in the {sup 100}Sn isotope is in good agreement with Colo et al's estimates (4-5%), and the obtained values for the volume integral change within the error range of the value reported by Fujiwara et al (53 {+-} 5 MeV fm{sup 3}). Moreover, it is concluded that although the differential cross section of the isobar analogue resonance for the ({sup 3}He,t) reactions is not sensitive to pairing correlations between nucleons, a considerable effect on the isospin admixtures in N {approx} Z isotopes can be seen with the presence of these correlations.

  11. Splitting Fermi Surfaces and Heavy Electronic States in Non-Centrosymmetric U3Ni3Sn4

    Science.gov (United States)

    Maurya, Arvind; Harima, Hisatomo; Nakamura, Ai; Shimizu, Yusei; Homma, Yoshiya; Li, DeXin; Honda, Fuminori; Sato, Yoshiki J.; Aoki, Dai

    2018-04-01

    We report the single-crystal growth of the non-centrosymmetric paramagnet U3Ni3Sn4 by the Bridgman method and the Fermi surface properties detected by de Haas-van Alphen (dHvA) experiments. We have also investigated single-crystal U3Ni3Sn4 by single-crystal X-ray diffraction, magnetization, electrical resistivity, and heat capacity measurements. The angular dependence of the dHvA frequencies reveals many closed Fermi surfaces, which are nearly spherical in topology. The experimental results are in good agreement with local density approximation (LDA) band structure calculations based on the 5f-itinerant model. The band structure calculation predicts many Fermi surfaces, mostly with spherical shape, derived from 12 bands crossing the Fermi energy. To our knowledge, the splitting of Fermi surfaces due to the non-centrosymmetric crystal in 5f-electron systems is experimentally detected for the first time. The temperature dependence of the dHvA amplitude reveals a large cyclotron effective mass of up to 35 m0, indicating the heavy electronic state of U3Ni3Sn4 due to the proximity of the quantum critical point. From the field dependence of the dHvA amplitude, a mean free path of conduction electrons of up to 1950 Å is detected, reflecting the good quality of the grown crystal. The small splitting energy related to the antisymmetric spin-orbit interaction is most likely due to the large cyclotron effective mass.

  12. The Krásná Hora, Milešov, and Příčovy Sb-Au ore deposits, Bohemian Massif: mineralogy, fluid inclusions, and stable isotope constraints on the deposit formation

    Science.gov (United States)

    Němec, Matěj; Zachariáš, Jiří

    2018-02-01

    The Krásná Hora-Milešov and Příčovy districts (Czech Republic) are the unique examples of Sb-Au subtype orogenic gold deposits in the Bohemian Massif. They are represented by quartz-stibnite veins and massive stibnite lenses grading into low-grade, disseminated ores in altered host rocks. Gold postdates the stibnite and is often replaced by aurostibite. The ore zones are hosted by hydrothermally altered dikes of lamprophyres (Krásná Hora-Milešov) or are associated with local strike-slip faults (Příčovy). Formation of Sb-Au deposits probably occurred shortly after the main gold-bearing event (348-338 Ma; Au-only deposits) in the central part of the Bohemian Massif. Fluid inclusion analyses suggest that stibnite precipitated at 250 to 130 °C and gold at 200 to 130 °C from low-salinity aqueous fluids. The main quartz gangue hosting the ore precipitated from the same type of fluid at about 300 °C. Early quartz-arsenopyrite veins are not associated with the Sb-Au deposition and formed from low-salinity, aqueous-carbonic fluid at higher pressure and temperature ( 250 MPa, 400 °C). The estimated oxygen isotope composition of the ore-bearing fluid (4 ± 1‰ SMOW; based on post-ore calcite) suggests its metamorphic or mixed magmatic-metamorphic origin and excludes the involvement of meteoric water. Rapid cooling of warm hydrothermal fluids reacting with "cold" host rock was probably the most important factor in the formation of both stibnite and gold.

  13. Effect of Cr{sub 2}O{sub 3} on the microstructure and non-ohmic properties of (Co, Sb)-doped SnO{sub 2} varistors

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar M, J. A. [Centro de Investigac ion en Materiales Avanzados, S. C., Alianza Norte No. 202, Parque de Investigacion e Innovacion Tecnologica, Nueva Carretera Aeropuerto Km. 10 Apodaca 66600, Nuevo Leon (Mexico); Pech C, M. I. [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Saltillo, Carretera Saltillo-Monterrey Km. 13, Saltillo 25900, Coahuila (Mexico); Hernandez, M. B.; Rodriguez, E.; Garcia O, L. [Universidad Autonoma de Nuevo Leon, Facultad de Ingenieria Mecanica y Electrica, San Nicolas de los Garza, Nuevo Leon (Mexico); Glot, A. B., E-mail: josue.aguilar@cimav.edu.mx [Universidad Tecnologica de la Mixteca, Division de Estudios de Posgrado, Carretera Acatlima Km. 2.5, Huajuapan de Leon 69000, Oaxaca (Mexico)

    2013-10-01

    The effect of Cr{sub 2}O{sub 3} addition on the physical characteristics, microstructure, and current-voltage properties of (Co-Sb)-doped SnO{sub 2} varistors was investigated. SnO{sub 2}-Co{sub 3}O{sub 4}-Sb{sub 2}O{sub 5} ceramics with additions of 0.0, 0.03, 0.05 and 0.07 mol % Cr{sub 2}O{sub 3} were sintered at 1350 C under ambient atmosphere and characterized micro structurally and electrically. The characterization by X-ray diffraction and scanning electron microscopy show that the microstructure remains as a single phase material with multimodal size distribution of SnO{sub 2} grains. The greatest effect of Cr{sub 2}O{sub 3} additions is manifested in the electric breakdown field. Additions of high levels (0.07 and 0.05 %) of this oxide promote and increase of approximately 55% in this parameter compared to the Cr{sub 2}O{sub 3}-free sample. Another physical property is affected: the measured density values decreases as the Cr{sub 2}O{sub 3} content increases. A change in the nonlinearity coefficient value is produced only at the highest Cr{sub 2}O{sub 3} content while at intermediate levels there is not change at all. Consequently, when seeking high nonlinearity coefficients, intermediate levels of Cr{sub 2}O{sub 3} are not recommended. (Author)

  14. Analysis and characterization of heavy residues produced in 129Xe + natSn reactions between 8 and 25 AMeV

    International Nuclear Information System (INIS)

    Moisan, J.

    2008-06-01

    Studies with the INDRA multidetector of the 129 Xe + nat Sn reactions showed the unexpected existence of heavy fragments with a charge as large as Z=70. The charges of Xe and Sn are 54 and 50 respectively. Reactions between nuclei with a charge product greater than 2700 are dominated by deep inelastic collisions. For Xe + Sn the product is exactly 2700. After these observations, 129 Xe + nat Sn reactions at 8, 12, 15, 20 and 25 AMeV have been done. It will then be possible to clarify if the heavy residues are formed by an incomplete fusion, massive transfers occurring in deep inelastic collisions or a very asymmetric fission of a compound system. This work will present experimental results obtained by the analysis of these experiments. We will show that heavy residues are formed with a production cross-section of 10 -2 mb. Angular distributions show that the residues can be produced by an incomplete fusion of the projectile and the target. The study of the products in coincidence with the residues shows that a compound system was formed, followed by a fission producing the residue and a lighter fragment. The comparison with a phenomenological model, HIPSE, confirms that the model is valid at these energies

  15. $\\gamma$- spectroscopy of n-rich $^{95,96}$Rb nuclei by the incomplete fusion reaction of $^{94}$Kr on $^{7}$Li: Introduction to HIE-ISOLDE studies of n-rich Sb and Tl isotopes with Sn and Hg radioactive beams.

    CERN Document Server

    Fornal, B; Bednarczyk, P; Cieplicka, N; Krolas, W; Maj, A; Leoni, S; Benzoni, G; Blasi, N; Bottoni, S; Bracco, A; Camera, F; Crespi, F; Million, B; Morales, A; Wieland, O; Rusek, K; Lunardi, S; Mengoni, D; Recchia, F; Ur, CA; Valiente-Dobon, J; de France, G; Clement, E; Elseviers, J; Flavigny, F; Huyse, M; Raabe, R; Sambi, S; Van Duppen, P; Sferrazza, M; Simpson, G; Georgiev, G; Sotty, C; Blazhev, A; German, R; Siebeck, B; Seidlitz, M; Reiter, P; Warr, N; Boenig, S; Ilieva, S; Kroell, T; Scheck, M; Thurauf, M; Gernhaeuser, R; Mucher, D; Janssens, R; Carpenter, MP; Zhu, S; Marginean, NM; Balabanski, D; Kowalska, M

    2012-01-01

    $\\gamma$- spectroscopy of n-rich $^{95,96}$Rb nuclei by the incomplete fusion reaction of $^{94}$Kr on $^{7}$Li: Introduction to HIE-ISOLDE studies of n-rich Sb and Tl isotopes with Sn and Hg radioactive beams.

  16. Metallic nature of Sn{sub 1-} {sub x} Sb {sub x} O{sub 2{+-}} {sub {delta}} (x=0.0, 0.10 and 0.20) mixed oxides: Probed by {sup 119}Sn MAS NMR

    Energy Technology Data Exchange (ETDEWEB)

    Jayakumar, O.D. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)]. E-mail: ddjaya@apsara.barc.ernet.in; Sudarsan, V. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Kulshreshtha, S.K. [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2007-04-15

    Antimony doped SnO{sub 2} samples were prepared by co-precipitation method and characterized by X-ray diffraction (XRD), {sup 119}Sn magic angle spinning nuclear magnetic resonance (MAS NMR) and variable temperature electrical conductivity measurements. Based on {sup 119}Sn MAS NMR measurements on these samples, it was established that only above 400 deg. C, the structural units of antimony and tin interacts, resulting in the metallic nature. Metallic behavior of the high-temperature heated samples was further confirmed by the variable temperature electrical conductivity measurements.

  17. Spatial distribution of heavy metal contamination in soils near a primitive e-waste recycling site.

    Science.gov (United States)

    Quan, Sheng-Xiang; Yan, Bo; Yang, Fan; Li, Ning; Xiao, Xian-Ming; Fu, Jia-Mo

    2015-01-01

    The total concentrations of 12 heavy metals in surface soils (SS, 0-20 cm), middle soils (MS, 30-50 cm) and deep soils (DS, 60-80 cm) from an acid-leaching area, a deserted paddy field and a deserted area of Guiyu were measured. The results showed that the acid-leaching area was heavily contaminated with heavy metals, especially in SS. The mean concentrations of Ni, Cu, Zn, Cd, Sn, Sb and Pb in SS from the acid-leaching area were 278.4, 684.1, 572.8, 1.36, 3,472, 1,706 and 222.8 mg/kg, respectively. Heavy metal pollution in the deserted paddy field was mainly concentrated in SS and MS. The average values of Sb in SS and MS from the deserted paddy field were 16.3 and 20.2 mg/kg, respectively. However, heavy metal contamination of the deserted area was principally found in the DS. Extremely high concentrations of heavy metals were also observed at some special research sites, further confirming that the level of heavy metal pollution was very serious. The geoaccumulation index (Igeo) values revealed that the acid-leaching area was severely polluted with heavy metals in the order of Sb > Sn > Cu > Cd > Ni > Zn > Pb, while deserted paddy field was contaminated predominately by metals in the order of Sb > Sn > Cu. It was obvious that the concentrations of some uncommon contaminants, such as Sb and Sn, were higher than principal contaminants, such as Ni, Cu, Zn and Pb, suggesting that particular attention should be directed to Sn and Sb contamination in the future research of heavy metals in soils from e-waste-processing areas. Correlation analysis suggested that Li and Be in soils from the acid-leaching area and its surrounding environment might have originated from other industrial activities and from batteries, whereas Ni, Cu, Zn, Cd, Pb, Sn and Sb contamination was most likely caused by uncontrolled electronic waste (e-waste) processing. These results indicate the significant need for optimisation of e-waste-dismantling technologies and remediation of polluted soil

  18. Enhanced electrochemical oxidation of synthetic dyeing wastewater using SnO2-Sb-doped TiO2-coated granular activated carbon electrodes with high hydroxyl radical yields

    International Nuclear Information System (INIS)

    Li, Xinyang; Wu, Yue; Zhu, Wei; Xue, Fangqing; Qian, Yi; Wang, Chengwen

    2016-01-01

    Highlights: • We study granular activated carbon (GAC) electrodes coated with catalysts. • GAC coated with ATOT demonstrates an impressive ·OH yield. • This electrode can be used in continuous-flow three-dimensional electrode reactors. • We use Rhodamine B as a model organic compound for removal. • The GAC/ATOT performs better than all other electrodes examined. - Abstract: In this study, granular activated carbon (GAC) coated with SnO 2 -Sb doped TiO 2 (GAC/ATOT) with a high hydroxyl radical (·OH) yield is prepared via the sol-gel method. This material is utilized as a granular electrode in a continuous-flow three-dimensional electrode reactor (CTDER) for the enhanced treatment of synthetic dyeing wastewater containing Rhodamine B (RhB). We then characterize the physical properties, electrochemical properties, and electrochemical oxidation performance of the granular electrode. The results show that using the GAC/ATOT electrode in a CTDER significantly enhances the chemical oxygen demand (COD) removal, decreases the energy consumption, and improves the current efficiency of the wastewater. This is primarily attributed to the higher catalytic activity of GAC/ATOT for ·OH production compared to that of other candidates, such as TiO 2 coated GAC (GAC/T), Sb doped SnO 2 coated GAC (GAC/ATO), and pure GAC. The mechanism of the enhanced electrochemical oxidation afforded by using GAC/ATOT indicates that the high ·OH yield in the reactor packed with GAC/ATOT electrodes contributes to the enhanced electrochemical oxidation performance with respect to organic compounds.

  19. Study of neutron-deficient Sn isotopes

    International Nuclear Information System (INIS)

    Auger, G.

    1982-05-01

    The formation of neutron deficient nuclei by heavy ion reactions is investigated. The experimental technique is presented, and the results obtained concerning Sn et In isotopes reported: first excited states of 106 Sn, high spin states in 107 Sn and 107 In; Yrast levels of 106 Sn, 107 Sn, 108 Sn; study of neutron deficient Sn and In isotopes formed by the desintegration of the compound nucleus 112 Xe. All these results are discussed [fr

  20. The matrix effect study in the spectrographic analysis of rare earth elements. Pt. 1. The influence of Sn, Pb, Sb, Bi, Cu, Ag, Zn and Cd on the spectral lines intensity of Y, La, Ce, Pr, Nd and Sm in the current arc exciting between C-electrodes

    International Nuclear Information System (INIS)

    Wysocka-Lisek, J.; Paszkowska, B.; Mularczyk, K.

    1976-01-01

    In the beginning the influence of Sn, Pb, Sb, Bi, Cu, Ag, Zn and Cd on the light rare earth spectral lines using Ni as the internal standard, during the intermittent current arc excitation between C-electrodes was studied. On the basis of the spectral lines intensity measurements, it was stated that one may apply the addition of Ni as the internal standard by the quantitative determination of Sn, Pb, Sb, Bi, Zn and Cd in the light rare earth mixtures with one of the above. Also a great influence of the presence of the individually studied metal was observed on the spectral line intensity of rare earth elements and nickel. The differences of the thermo-chemical reactions nature between excited elements and the carbon of the electrodes may cause that influence. (author)

  1. Current-voltage characteristics of SnO{sub 2}-Co{sub 3}O{sub 4}-Cr{sub 2}O{sub 3}-Sb{sub 2}O{sub 5} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar-Martinez, J A [Centro de Investigacion en Materiales Avanzados, S.C. (CIMAV), Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica (PIIT), Nueva Carretera Aeropuerto km. 10, Apodaca, Nuevo Leon, CP 66600 (Mexico); Glot, A B [Posgrado, Universidad Tecnologica de la Mixteca, Carretera Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca, CP 69000 (Mexico); Gaponov, A V [Department of Radioelectronics, Dniepropetrovsk National University, Dniepropetrovsk 49050 (Ukraine); Hernandez, M B [Instituto de Mineria, Universidad Tecnologica de la Mixteca, Carretera Acatlima Km. 2.5, Huajuapan de Leon, Oaxaca, CP 69000 (Mexico); Guerrero-Paz, J, E-mail: josue.aguilar@cimav.edu.m [Particulate Materials Lab, Universidad Autonoma del Estado de Hidalgo, Pachuca, CP 42184 (Mexico)

    2009-10-21

    The effect of mechanical treatment in a planetary mill on the microstructure and electrical properties of tin dioxide based varistor ceramics in the system SnO{sub 2}-Co{sub 3}O{sub 4}-Cr{sub 2}O{sub 3}-Sb{sub 2}O{sub 5} sintered in the range 1150-1450 {sup 0}C was studied. The mechanical treatment leads to an increase in shrinkage, decrease in porosity, decrease in sample diameter, change in colour of the sintered samples from grey to black and enhancement of nonlinearity. For the sample sintered at 1350 {sup 0}C the mechanical treatment enhances the nonlinearity coefficient from 11 to 31 and decreases the electric field E{sub 1} (at 10{sup -3} A cm{sup -2}) from 3500 to 2800 V cm{sup -1}. The observed changes in physical properties are explained in terms of an additional size reduction of oxide particles and a better mixing of oxide powder followed by the formation of potential barriers at the grain boundaries throughout the whole sample. In spite of the low porosity, the low-field electrical conductivity of mechanically treated ceramics is significantly increased with the growth of relative humidity. A higher humidity sensitivity is found for mechanically treated ceramics with higher barrier height and higher nonlinearity coefficient.

  2. Swift heavy ion irradiated SnO_2 thin film sensor for efficient detection of SO_2 gas

    International Nuclear Information System (INIS)

    Tyagi, Punit; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-01-01

    Highlights: • Response of Ni"7"+ ion irradiated (100 MeV) SnO_2 film have been performed. • Effect of irradiation on the structural and optical properties of SnO_2 film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni"7"+ ion irradiated (100 MeV) and non-irradiated SnO_2 thin film sensor prepared under same conditions have been performed towards SO_2 gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO_2 thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO_2 thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO_2 thin film by Ni"7"+ ions.

  3. Electronically Conductive Sb-doped SnO_2 Nanoparticles Coated LiNi_0_._8Co_0_._1_5Al_0_._0_5O_2 Cathode Material with Enhanced Electrochemical Properties for Li-ion Batteries

    International Nuclear Information System (INIS)

    He, Xiaoshu; Du, Chunyu; Shen, Bin; Chen, Cheng; Xu, Xing; Wang, Yajing; Zuo, Pengjian; Ma, Yulin; Cheng, Xinqun; Yin, Geping

    2017-01-01

    Highlights: • Conductive Sb-doped SnO_2 (ATO) is coated on LiNi_0_._8Co_0_._1_5Al_0_._0_5O_2 material. • The wet chemical process leads to homogeneous ATO coating layer. • The coated sample exhibits excellent rate capability and cyclic stability. • The capacity retention after 200 cycles at 60 °C increases by 20.81%. • The ATO coating restrains the cation disordering and SEI growth during cycling. - Abstract: The LiNi_0_._8Co_0_._1_5Al_0_._0_5O_2 (NCA) cathode material is modified by electronically conductive antimony-doped tin oxide (ATO) nanoparticles via a facile wet chemical process. As observed by scanning and transmission electron microscopy, the ATO nanoparticles are homogeneously coated on the surface of NCA material. Thus-obtained ATO-coated NCA (ATO-NCA) material delivers a high discharge capacity of 145 mAh g"−"1 at the current rate of 5C, which is significantly higher than that of pristine NCA material (135 mAh g"−"1). Moreover, the capacity retention of ATO-NCA material is 91.70% after 200 cycles at the current rate of 1C and 60 °C. In contrast, the pristine NCA only maintains 70.89% of its initial capacity after the same cycles. The substantially improved cyclability and rate capability are mainly attributed to the ATO coating layer, which can not only enhance the electron transport but also effectively restrain the side reactions between the NCA material and the electrolyte. More specifically, X-ray diffraction and photoelectron spectroscopy reveal that the ATO coating layer can restrain the Li"+/Ni"2"+ disordering and the growth of SEI layer of NCA material, which are responsible for the improved cycling stability, especially at elevated temperatures.

  4. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    Science.gov (United States)

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  5. Heavy Metals (Mg, Mn, Ni and Sn contamination in Soil Samples of Ahvaz II Industrial Estate of Iran in 2013

    Directory of Open Access Journals (Sweden)

    Soheil l Sobhanardakani

    2016-04-01

    Full Text Available Background & Aims of the Study: Due to the rapid industrial development in Khuzestan province of Iran during recent years, this study was performed to analyze the variation of metals concentrations (Mg, Mn, Ni, and Sn in soil samples of Ahvaz II Industrial estate during the spring season of 2013. Materials & Methods: In this experimental study, 27 topsoil samples were collected from nine stations. The intensity of the soil contamination was evaluated, using a contamination factor (Cf and geo-accumulation index (I-geo. Results:  The mean soil concentrations (in mg kg-1 (dry weight were in ranged within 870-1144 (Mg, 188-300 (Mn, 93-199 (Ni and 9-15 (Sn. The data indicated that the I-geo value for all metals falls in class ‘1’. Also the Cf value for Mg and Mn falls in class ‘0’, the Cf value for Sn falls in class ‘1’ and the Cf value for Ni falls in the classes of ‘1’ and ‘2’. The result of the Pearson correlation showed that there were significant positive associations between all metals. Conclusions: According to the results which were achieved by a cluster analysis, there were significant positive associations among all metals based on Pearson correlation coefficient, especially between Ni and Sn; also both of them with Mn. Because the Ni originates from oil sources it can be resulted that Mn and Sn originate from oil sources, too. Therefore, industrial activities and exploitation of oil reservoirs are the main cause of pollution in that area. Also, it can be concluded that, with increasing the distance from the source of pollution, the accumulation of contaminants in the soil samples decreased.

  6. Zwitterion-functionalized polymer microspheres as a sorbent for solid phase extraction of trace levels of V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) prior to their determination by ICP-MS.

    Science.gov (United States)

    Jia, Xiaoyu; Gong, Dirong; Zhao, Junyi; Ren, Hongyun; Wang, Jiani; Zhang, Xian

    2018-03-19

    This paper describes the preparation of zwitterion-functionalized polymer microspheres (ZPMs) and their application to simultaneous enrichment of V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) from environmental water samples. The ZPMs were prepared by emulsion copolymerization of ethyl methacrylate, 2-diethylaminoethyl methacrylate and triethylene glycol dimethyl acrylate followed by modification with 1,3-propanesultone. The components were analyzed by elemental analyses as well as Fourier transform infrared spectroscopy, and the structures were characterized by scanning electron microscopy and transmission electron microscopy. The ZPMs were packed into a mini-column for on-line solid-phase extraction (SPE) of the above metal ions. Following extraction with 40 mM NH 4 NO 3 and 0.5 M HNO 3 solution, the ions were quantified by ICP-MS. Under the optimized conditions, the enrichment factors (from a 40 mL sample) are up to 60 for the ions V(V), As(III), Sb(III) and Hg(II), and 55 for Cr(III) and Sn(IV). The detection limits are 1.2, 3.4, 1.0, 3.7, 2.1 and 1.6 ng L -1 for V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II), respectively, and the relative standard deviations (RSDs) are below 5.2%. The feasibility and accuracy of the method were validated by successfully analyzing six certified reference materials as well as lake, well and river waters. Graphical abstract Zwitterion-functionalized polymer microspheres (ZPMs) were prepared and packed into a mini-column for on-line solid-phase extraction (SPE) via pump 1. Then V(V), Cr(III), As(III), Sn(IV), Sb(III) and Hg(II) ions in environmental waters were eluted and submitted to ICP-MS via pump 2.

  7. As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

    Science.gov (United States)

    Zientek, M.L.; Fries, T.L.; Vian, R.W.

    1990-01-01

    The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The

  8. Polar Kerr Effect from Time-Reversal Symmetry Breaking in the Heavy-Fermion Superconductor PrOs4Sb12

    Science.gov (United States)

    Levenson-Falk, E. M.; Schemm, E. R.; Aoki, Y.; Maple, M. B.; Kapitulnik, A.

    2018-05-01

    We present polar Kerr effect measurements of the filled skutterudite superconductor PrOs4 Sb12 . Simultaneous ac susceptibility measurements allow us to observe the superconducting transition under the influence of heating from the optical beam. A nonzero Kerr angle θK develops below the superconducting transition, saturating at ˜300 nrad at low temperatures. This result is repeated across several measurements of multiple samples. By extrapolating the measured θK(T ) to zero optical power, we are able to show that the Kerr angle onset temperature in one set of measurements is consistent with the transition to the B phase at TC 2. We discuss the possible explanations for this result and its impact on the understanding of multiphase and inhomogeneous superconductivity in PrOs4 Sb12 .

  9. New sulfido antimonates of the heavy alkali metals. Synthesis, crystal structure and chemical bonding of (K/Rb/Cs){sub 3}SbS{sub 3} and Cs{sub 3}SbS{sub 4} . H{sub 2}O; Neue Sulfido-Antimonate der schweren Alkalimetalle. Synthese, Kristallstruktur und chemische Bindung von (K/Rb/Cs){sub 3}SbS{sub 3} und Cs{sub 3}SbS{sub 4} . H{sub 2}O

    Energy Technology Data Exchange (ETDEWEB)

    Schindler, Lisa V.; Schwarz, Michael; Roehr, Caroline [Freiburg Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2013-12-15

    The new sulfido antimonates(III) (Rb/Cs){sub 3}SbS{sub 3} were prepared from the alkali metal sulfides Rb{sub 2}S/Cs{sub 2}S{sub 2} and elemental antimony and sulfur or Sb{sub 2}S{sub 3} at reaction temperatures of about 700 C. The known isotypic potassium compound was similarly synthesized from the elements. The structures of the light-yellow crystals were refined using single-crystal X-ray data. Both compounds are isotypic to the respective Na salt forming the Na{sub 3}AsS{sub 3} structure type (cubic, space group P2{sub 1}3, K/Rb/Cs: a = 947.21(7)/982.28(5)/1025.92(5) pm, Z = 4, R1 = 0.0159/0.0560/0.0582). The {psi}-tetrahedral SbS{sub 3}{sup 3-} anions with Sb-S bond lengths of 242 pm are arranged in a cubic face centered packing, in which the three crystallographically different A{sup +} cations occupy the tetrahedral and octahedral voids, overall exhibiting a distorted octahedral sulfur coordination. The chemical bonding and the characteristics of the stereochemically active lone electron pair have been investigated by means of FP-LAPW band structure calculations. Needle-shaped crystals of the monohydrate of the antimony(V) salt Cs{sub 3}SbS{sub 4} . H{sub 2}O were obtained from a suspension of Sb{sub 2}O{sub 3}, CsOH and elemental sulfur. Cs{sub 3}SbS{sub 4} . H{sub 2}O crystallizes in a new structure type (monoclinic, space group P2{sub 1}/c, a = 987.17(10), b = 994.83(7), c = 1600.46(14) pm, {beta} = 126.895(8) , Z = 4, R1 = 0.0234). As expected, the Sb-S distances (233.1-234.7 pm) in the nearly ideally tetrahedral anion SbS{sub 4}{sup 3-} are considerably shorter than in the antimonates(III) but match the bond lengths in the anhydrous sulfido antimonate(V) Cs{sub 3}SbS{sub 4}. Due to their similar fcc-like anion packing and the stereochemically active lone electron pair of Sb in the antimonates(III), the whole series of compounds A{sub 3}Sb{sup III,V}S{sub 3/4} shows a uniform structure relation, which is elucidated using crystallographic group

  10. The inverse perovskite nitrides (Sr{sub 3}N{sub 2/3-x})Sn, (Sr{sub 3}N{sub 2/3-x})Pb, and (Sr{sub 3}N)Sb. Flux crystal growth, crystal structures, and physical properties

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Manisha; Bobnar, Matej; Ormeci, Alim; Prots, Yurii; Hoehn, Peter [Chemische Metallkunde, Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Stoiber, Dominik; Niewa, Rainer [Institut fuer Anorganische Chemie, Universitaet Stuttgart (Germany)

    2018-02-15

    Black single crystals with metallic luster of (Sr{sub 3}N{sub 2/3-x})E (E = Sn, Pb) and (Sr{sub 3}N)Sb were grown in lithium flux from strontium nitride, Sr{sub 2}N, and tin, lead, or antimony, respectively. Nitrogen deficiency in the tin and the lead compound is a result of the higher ionic charge of the tetrelide ions E{sup 4-} as compared to the antimonide ion Sb{sup 3-}. In contrast to microcrystalline samples from solid state sinter reactions obtained earlier, the flux synthesis induces nitrogen order in the nitrogen deficient tetrelides. The antimony compound crystallizes as inverse cubic perovskite [a = 517.22(5) pm, Z = 1, space group Pm3m, no. 221] with fully occupied nitrogen site, whereas the nitrogen deficient tin and lead compounds exhibit partially ordered arrangements and a certain phase width in respect to nitrogen contents. For the tetrelides, the nitrogen order leads to a cubic 2 x 2 x 2 superstructure [E = Sn: a = 1045.64(8) pm for x = 0, a = 1047.08(7) pm for x = 0.08; and E = Pb: a = 1050.7(1) pm for x = 0, space group Fm3m, no. 225] as derived from single-crystal X-ray diffraction data. The metallic tetrelides show diamagnetic behavior, which is consistent with electronic structure calculations. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Development of a 117mSn preparation method

    International Nuclear Information System (INIS)

    Moraes, Vanessa; Osso Junior, Joao Alberto

    2000-01-01

    117m Sn is a radioisotope with suitable characteristics to be used in nuclear medicine as radiotherapy, when labeled with DTPA. The aim of this work is the preparation of 117m Sn from irradiation of the natural tin with proton beam at the cyclotron CV-28 of IPEN-CNEN/SP via the nuclear reaction nat Sn (p, xn) 117 Sb to 117m Sn. Due to the formation of the Sb precursor it is necessary to perform a chemical separation for Sb-Sn. The separation method used was the ion exchange, due to its utilization facilities for radioactive material. Chemical, radiochemical and radionuclidic methods were also developed for the quality control of the final product, the 117m Sn. (author)

  12. Determination of the excitation energy and angular momentum of the quasi-projectiles produced in the heavy ion collisions Xe + Sn

    International Nuclear Information System (INIS)

    Genouin-Duhamel, Emmanuel

    1999-01-01

    This work is a contribution to the study of properties of hot nuclei formed in heavy ion collisions at intermediate energies. The experiment has been performed with the INDRA multidetector. It is shown that most of the reaction cross section is associated with binary dissipative collisions, accompanied by the production of particles from a region between the two reaction partners. This study is focussed on excitation energy and angular momentum of projectile-like fragment (PLF) in 129 Xe + nat Sn reactions from 25 to 50 MeV per nucleon. Several methods are used to characterize hot nuclei (velocity, charge, mass and excitation energy). All these methods are compared between them and indicate that high energies are deposited in the nuclei during collision (it may exceed the nucleus binding energy). The angular momentum transferred into intrinsic spin to PLF in the peripheral collisions has been deduced from angular distributions and kinetic energies of the emitted light charged particles (atomic number smaller ar equal to 2). Both methods agree qualitatively. The spin values decrease with the violence of the collision. These values correspond to values averaged over the whole deexcitation chain of nuclei. The predictions of transport models reproduce qualitatively the most peripheral collisions and suggest that high spins are transferred to PLF (from 30 to 50 ℎ). Larger angular momentum values are observed at the lowest incident energy. The time hierarchy in the evaporation process and the role of mid-rapidity emission are also discussed. (author)

  13. Preparation and characterization of segmented p-type Ti0.3Zr0.35Hf0.35CoSb0.8Sn0.2/Ca3Co4O9

    DEFF Research Database (Denmark)

    Le, Thanh Hung; Han, Li; Stamate, Eugen

    with HH using an electrically conductive adhesive and brazing joining technique. The thermoelectric properties of the component materials as well as the interfacial resistance at high temperatures were characterized as a function of temperature up to 1100 K, and the results are discussed in details.......Misfit-layered cobaltite Ca3Co4O9+δ is considered as good p-type thermoelectric material in high temperature region (950 - 1100 K), while half-Heusler (HH) Ti0.3Zr0.35Hf0.35CoSb0.8Sn0.2 is high performance p-type material at temperatures below 950 K. In this work, oxide Ca3Co4O9+δ is segmented...

  14. Effect of indium and antimony doping in SnS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  15. Efficient and selective heavy metal sequestration from water by using layered sulfide K 2x Sn 4-x S 8-x (x = 0.65–1; KTS-3)

    Energy Technology Data Exchange (ETDEWEB)

    Sarma, Debajit; Islam, Saiful M.; Subrahmanyam, K. S.; Kanatzidis, Mercouri G.

    2016-09-16

    Heavy metal ions (Cd2+, Hg2+, As3+ and Pb2+) are an important contributor to the contamination of groundwater and other water bodies in and around industrial areas. Herein, we demonstrate the rapid and efficient capacity of a layered metal sulfide material, K2xSn4-xS8-x (x = 0.65-1, KTS-3) for heavy metal ion removal from water. The effect of concentration, pH, kinetics, and competitive ions such as Na+/Ca2+ on the heavy metal ion removal capacity of KTS-3 was systematically investigated. X-ray photoelectron spectroscopy (XPS), elemental analyses, and powder X-ray diffraction studies revealed that the heavy metal ion-exchange of KTS-3 is complete (quantitative replacement of all potassium ions) and topotactic. The heavy metal ion-exchange by using KTS-3 follows the Langmuir-Freundlich model with high exchange capacities, q(m) 205(17) mg g-1 for Cd2+, 372(21) mg g-1 for Hg2+ and 391(89) mg g-1 for Pb2+. KTS-3 retains excellent heavy metal ion-exchange capacity even in very high concentration (1 M) of competing ions (Na+/Ca2+) and also over a broad pH range (2-12). KTS-3 also exhibits very good ion-exchange capacity for precious Ag+ and toxic As3+ ions. The kinetics of heavy metal ion adsorption by KTS-3 are rapid (absorbs all ions within a few minutes). These properties and the environmentally friendly character of KTS-3 make it a promising candidate for sequestration of heavy metal ions from water.

  16. SN Refsdal

    DEFF Research Database (Denmark)

    Kelly, P. L.; Brammer, G.; Selsing, J.

    2016-01-01

    (SNe), and we find strong evidence for a broad H-alpha P-Cygni profile in the HST grism spectrum at the redshift (z = 1.49) of the spiral host galaxy. SNe IIn, powered by circumstellar interaction, could provide a good match to the light curve of SN Refsdal, but the spectrum of a SN IIn would not show...... in the rest frame, provide additional evidence that supports the SN 1987A-like classification. In comparison with other examples of SN 1987A-like SNe, SN Refsdal has a blue B-V color and a high luminosity for the assumed range of potential magnifications. If SN Refsdal can be modeled as a scaled version of SN...

  17. Swift heavy ion irradiated SnO{sub 2} thin film sensor for efficient detection of SO{sub 2} gas

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Punit; Sharma, Savita [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2016-07-15

    Highlights: • Response of Ni{sup 7+} ion irradiated (100 MeV) SnO{sub 2} film have been performed. • Effect of irradiation on the structural and optical properties of SnO{sub 2} film is studied. • A decrease in operating temperature and increased response is seen after irradiation. - Abstract: Gas sensing response studies of the Ni{sup 7+} ion irradiated (100 MeV) and non-irradiated SnO{sub 2} thin film sensor prepared under same conditions have been performed towards SO{sub 2} gas (500 ppm). The effect of irradiation on the structural, surface morphological, optical and gas sensing properties of SnO{sub 2} thin film based sensor have been studied. A significant decrease in operating temperature (from 220 °C to 60 °C) and increased sensing response (from 1.3 to 5.0) is observed for the sample after irradiation. The enhanced sensing response obtained for the irradiated SnO{sub 2} thin film based sensor is attributed to the desired modification in the surface morphology and material properties of SnO{sub 2} thin film by Ni{sup 7+} ions.

  18. Extension of the excitation functions of deuteron induced reactions on {sup nat}Sn up to 50 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Hermanne, A., E-mail: aherman@vub.ac.be [Cyclotron Laboratory, Vrije Universiteit Brussel, B1050 Brussels (Belgium); Tárkányi, F.; Ditrói, F.; Takács, S. [Institute of Nuclear Research of the Hungarian Academy of Sciences, H4026 Debrecen (Hungary)

    2017-01-15

    Using the stacked-foil activation technique, cross-sections of deuteron induced reactions on natural Sn targets were determined up to 50 MeV. Excitation functions are reported for the product nuclides {sup 116m}Sb, {sup 117}Sb, {sup 118m}Sb, {sup 120m}Sb {sup 122m+g}Sb, {sup 124m+g}Sb, {sup 110}Sn(cum), {sup 113m+g}Sn(cum), {sup 117m}Sn, {sup 110m}In(cum), {sup 110g}In, {sup 111m+g}In(cum), {sup 113m}In, {sup 114m}In {sup 115m}In. Comparison with earlier published data at lower energy is discussed. For all excitation functions a theoretical calculation using the TALYS 1.6 (on-line TENDL-2015 library) code is shown.

  19. The Effects of Antimony Addition on the Microstructural, Mechanical, and Thermal Properties of Sn-3.0Ag-0.5Cu Solder Alloy

    Science.gov (United States)

    Sungkhaphaitoon, Phairote; Plookphol, Thawatchai

    2018-02-01

    In this study, we investigated the effects produced by the addition of antimony (Sb) to Sn-3.0Ag-0.5Cu-based solder alloys. Our focus was the alloys' microstructural, mechanical, and thermal properties. We evaluated the effects by means of scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), differential scanning calorimetry (DSC), and a universal testing machine (UTM). The results showed that a part of the Sb was dissolved in the Sn matrix phase, and the remaining one participated in the formation of intermetallic compounds (IMCs) of Ag3(Sn,Sb) and Cu6(Sn,Sb)5. In the alloy containing the highest wt pct Sb, the added component resulted in the formation of SnSb compound and small particle pinning of Ag3(Sn,Sb) along the grain boundary of the IMCs. Our tests of the Sn-3.0Ag-0.5Cu solder alloys' mechanical properties showed that the effects produced by the addition of Sb varied as a function of the wt pct Sb content. The ultimate tensile strength (UTS) increased from 29.21 to a maximum value of 40.44 MPa, but the pct elongation (pct EL) decreased from 48.0 to a minimum 25.43 pct. Principally, the alloys containing Sb had higher UTS and lower pct EL than Sb-free solder alloys due to the strengthening effects of solid solution and second-phase dispersion. Thermal analysis showed that the alloys containing Sb had a slightly higher melting point and that the addition amount ranging from 0.5 to 3.0 wt pct Sb did not significantly change the solidus and liquidus temperatures compared with the Sb-free solder alloys. Thus, the optimal concentration of Sb in the alloys was 3.0 wt pct because the microstructure and the ultimate tensile strength of the SAC305 solder alloys were improved.

  20. Monitoring of heavy metal concentrations in home outdoor air using moss bags

    Energy Technology Data Exchange (ETDEWEB)

    Rivera, Marcela, E-mail: arivera@creal.ca [Centre for Research in Environmental Epidemiology CREAL, Barcelona (Spain); Municipal Institute of Medical Research (IMIM-Hospital del Mar), Barcelona (Spain); Universitat Pompeu Fabra, Barcelona (Spain); CIBER Epidemiologia y Salud Publica (CIBERESP) (Spain); Zechmeister, Harald [University of Vienna, Faculty of Life Sciences, Vienna (Austria); Medina-Ramon, Mercedes; Basagana, Xavier [Centre for Research in Environmental Epidemiology CREAL, Barcelona (Spain); Municipal Institute of Medical Research (IMIM-Hospital del Mar), Barcelona (Spain); CIBER Epidemiologia y Salud Publica (CIBERESP) (Spain); Foraster, Maria [Centre for Research in Environmental Epidemiology CREAL, Barcelona (Spain); Municipal Institute of Medical Research (IMIM-Hospital del Mar), Barcelona (Spain); Universitat Pompeu Fabra, Barcelona (Spain); CIBER Epidemiologia y Salud Publica (CIBERESP) (Spain); Bouso, Laura [Centre for Research in Environmental Epidemiology CREAL, Barcelona (Spain); Municipal Institute of Medical Research (IMIM-Hospital del Mar), Barcelona (Spain); CIBER Epidemiologia y Salud Publica (CIBERESP) (Spain); Moreno, Teresa [Institute of Environmental Assessment and Water Research (IDAEA-CSIC), Barcelona (Spain); Solanas, Pascual; Ramos, Rafael [Research Unit, Family Medicine, Girona, Jordi Gol Institute for Primary Care Research (IDIAP Jordi Gol), Catalan Institute of Health, Catalunya (Spain); Department of Medical Sciences, School of Medicine, University of Girona (Spain); Koellensperger, Gunda [University of Natural Resources and Applied Life Sciences, Vienna (Austria); Deltell, Alexandre [Polytechnic School, GREFEMA, University of Girona (Spain); Vizcaya, David [Centre for Research in Environmental Epidemiology CREAL, Barcelona (Spain); Municipal Institute of Medical Research (IMIM-Hospital del Mar), Barcelona (Spain); Universitat Pompeu Fabra, Barcelona (Spain); CIBER Epidemiologia y Salud Publica (CIBERESP) (Spain)

    2011-04-15

    One monitoring station is insufficient to characterize the high spatial variation of traffic-related heavy metals within cities. We tested moss bags (Hylocomium splendens), deployed in a dense network, for the monitoring of metals in outdoor air and characterized metals' long-term spatial distribution and its determinants in Girona, Spain. Mosses were exposed outside 23 homes for two months; NO{sub 2} was monitored for comparison. Metals were not highly correlated with NO{sub 2} and showed higher spatial variation than NO{sub 2}. Regression models explained 61-85% of Cu, Cr, Mo, Pb, Sb, Sn, and Zn and 72% of NO{sub 2} variability. Metals were strongly associated with the number of bus lines in the nearest street. Heavy metals are an alternative traffic-marker to NO{sub 2} given their toxicological relevance, stronger association with local traffic and higher spatial variability. Monitoring heavy metals with mosses is appealing, particularly for long-term exposure assessment, as mosses can remain on site many months without maintenance. - Research highlights: > Moss bags can be used to measure the metal's long-term spatial distribution within cities. > Heavy metals in mosses are not highly correlated with ambient NO{sub 2} concentrations. > Heavy metals show higher spatial variation and association with traffic than NO{sub 2}. > Bus lines in the nearest street explain 75-85% of Mo, Cr, Sb, Sn and Cu variability. > Moss bags are useful for long-term at home exposure assessment in epidemiological studies. - The long-term spatial distribution of heavy metals, measured with moss bags, is mainly determined by proximity to bus lines.

  1. Monitoring of heavy metal concentrations in home outdoor air using moss bags

    International Nuclear Information System (INIS)

    Rivera, Marcela; Zechmeister, Harald; Medina-Ramon, Mercedes; Basagana, Xavier; Foraster, Maria; Bouso, Laura; Moreno, Teresa; Solanas, Pascual; Ramos, Rafael; Koellensperger, Gunda; Deltell, Alexandre; Vizcaya, David

    2011-01-01

    One monitoring station is insufficient to characterize the high spatial variation of traffic-related heavy metals within cities. We tested moss bags (Hylocomium splendens), deployed in a dense network, for the monitoring of metals in outdoor air and characterized metals' long-term spatial distribution and its determinants in Girona, Spain. Mosses were exposed outside 23 homes for two months; NO 2 was monitored for comparison. Metals were not highly correlated with NO 2 and showed higher spatial variation than NO 2 . Regression models explained 61-85% of Cu, Cr, Mo, Pb, Sb, Sn, and Zn and 72% of NO 2 variability. Metals were strongly associated with the number of bus lines in the nearest street. Heavy metals are an alternative traffic-marker to NO 2 given their toxicological relevance, stronger association with local traffic and higher spatial variability. Monitoring heavy metals with mosses is appealing, particularly for long-term exposure assessment, as mosses can remain on site many months without maintenance. - Research highlights: → Moss bags can be used to measure the metal's long-term spatial distribution within cities. → Heavy metals in mosses are not highly correlated with ambient NO 2 concentrations. → Heavy metals show higher spatial variation and association with traffic than NO 2 . → Bus lines in the nearest street explain 75-85% of Mo, Cr, Sb, Sn and Cu variability. → Moss bags are useful for long-term at home exposure assessment in epidemiological studies. - The long-term spatial distribution of heavy metals, measured with moss bags, is mainly determined by proximity to bus lines.

  2. Morphological and humidity sensing characteristics of SnO 2 –CuO ...

    Indian Academy of Sciences (India)

    This paper reports the synthesis of SnO2–CuO, SnO2–Fe2O3 and SnO2–SbO2 composites of nano oxides and comparative study of humidity sensing on their electrical resistances. CuO, Fe2O3 and SbO2 were added within base material SnO2 in the ratio 1 : 0.25, 1 : 0.50 and 1 : 1. Characterizations of materials were done ...

  3. Study the chemical composition and biological outcomes resulting from the interaction of the hormone adrenaline with heavy elements: Infrared, Raman, electronic, 1H NMR, XRD and SEM studies

    Science.gov (United States)

    Ibrahim, Omar B.; Mohamed, Mahmoud A.; Refat, Moamen S.

    2014-01-01

    Heavy metal adrenaline complexes formed from the reaction of adrenaline with Al3+, Zn2+, Sn2+, Sb3+, Pb2+and Bi3+ ions in methanolic solvent at 60 °C. The final reaction products have been isolated and characterization using elemental analyses (% of carbon, hydrogen and nitrogen), conductivity measurements, mid infrared, Raman laser, UV-Vis, 1H NMR spectra, X-ray powder diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). Upon the spectroscopic, conductivity and elemental analyses, the stoichiometric reactions indicated that the data obtained refer to 1:2 (M:L) for Zn2+, Sn2+, Pb2+and Bi3+ complexes [Zn(Adr)2(Cl)2], [Sn(Adr)2]Cl2, [Pb(Adr)2](NO3)2 and [Bi(Adr)2(Cl)2]Cl, while the molar ratio 1:3 (M:L) for Al3+ and Sb3+ with formulas [Al(Adr)3](NO3)3 and [Sb(Adr)3]Cl3. The infrared and Raman laser spectra interpreted the mode of interactions which associated through the two phenolic groups of catechol moiety. The adrenaline chelates have been screened for their in vitro antibacterial activity against four bacteria, Gram-positive (Bacillus subtilis and Staphylococcus aureus) and Gram-negative (Escherichia coli and Pseudomonas aeruginosa) and two strains of fungus (Aspergillus flavus and Candida albicans). The metal chelates were shown to possess more antibacterial and antifungal activities than the free adrenaline chelate.

  4. On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

    Energy Technology Data Exchange (ETDEWEB)

    Prokofieva, L. V., E-mail: lprokofieva496@gmail.com; Konstantinov, P. P.; Shabaldin, A. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2016-06-15

    The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 10{sup 19} cm{sup –3} at 300 K, is obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type A{sup IV}–B{sup VI} materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn{sup 2+} → Sn{sup 4+}. Types of compensating complexes are considered.

  5. Preparation, characterization and photocatalytic studies of Cu , Sn ...

    Indian Academy of Sciences (India)

    method. Metal ions (Cu2+ and Sn2+), and non-metal anion, N3−, were substituted into the K5Sb5P2O20 for pos- ... in the photocatalytic reaction was studied using their appropriate scavengers. Keywords. ... K5Sb5P2O20 and exchange of its potassium with copper and tin ions ... distilled water and dried in air at 100. ◦. C.

  6. Peculiarities of thermoelectric half-Heusler phase formation in Zr–Co–Sb ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V.V., E-mail: romakav@lp.edu.ua [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Romaka, L. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Rogl, P. [Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Army Academy named after Hetman Petro Sahaydachnyi, Gvardijska Str. 32, 79012 Lviv (Ukraine); Korzh, R.; Duriagina, Z. [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Horyn, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

    2014-02-05

    Highlights: • Phase relations for the Zr–Co–Sb system at 500 °C. • Homogeneity region for half-Heusler phase. • The distribution of DOS for Zr{sub 1+x}Co{sub 1−x}Sb predicts transition from semiconductor (x = 0) to metallic (x = 0.13) like behavior. • The existence of the solid solution Zr{sub 5}Co{sub x}Sb{sub 3+y} (x = 0.0–1.0, y = 0.0–1.0). -- Abstract: The phase equilibria in the Zr–Co–Sb ternary system were studied at 873 K by means of X-ray and metallographic analyses in the whole concentration range. The interaction between the elements results the formation of four ternary compounds at investigated temperature: ZrCoSb (MgAgAs-type), Zr{sub 6}CoSb{sub 2} (K{sub 2}UF{sub 6}-type), Zr{sub 5}CoSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type) and Zr{sub 5}Co{sub 0.5}Sb{sub 2.5} (W{sub 5}Si{sub 3}-type). The limited composition Zr{sub 5}CoSb{sub 3} of the solid solution based on the Zr{sub 5}Sb{sub 3−4} binaries is considered as compound with Hf{sub 5}CuSn{sub 3} structure type. The influence of the disordering and defects in the crystal structure of ZrCoSb on the physical properties was analyzed. The performed electronic structure calculations are in good agreement with electrical and magnetic studies.

  7. Solid Liquid Interdiffusion Bonding of Zn4Sb3 Thermoelectric Material with Cu Electrode

    Science.gov (United States)

    Lin, Y. C.; Lee, K. T.; Hwang, J. D.; Chu, H. S.; Hsu, C. C.; Chen, S. C.; Chuang, T. H.

    2016-10-01

    The ZnSb intermetallic compound may have thermoelectric applications because it is low in cost and environmentally friendly. In this study, a Zn4Sb3 thermoelectric element coated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode using a Ag/Sn/Ag solid-liquid interdiffusion bonding process. The results indicated that a Ni5Zn21 intermetallic phase formed easily at the Zn4Sb3/Ni interface, leading to sound adhesion. In addition, Sn film was found to react completely with the Ag layer to form a Ag3Sn intermetallic layer having a melting point of 480°C. The resulting Zn4Sb3 thermoelectric module can be applied at the optimized operation temperature (400°C) of Zn4Sb3 material as a thermoelectric element. The bonding strengths ranged from 14.9 MPa to 25.0 MPa, and shear tests revealed that the Zn4Sb3/Cu-joints fractured through the interior of the thermoelectric elements.

  8. Coexistence of magnetic order and valence fluctuations in a heavy fermion system Ce{sub 2}Rh{sub 3}Sn{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Gamza, Monika [Jeremiah Horrocks Institute, University of Central Lancashire, Preston (United Kingdom); MPI CPfS, Dresden (Germany); Institute of Physics, University of Silesia, Katowice (Poland); Gumeniuk, Roman [Institute of Experimental Physics, Freiberg University of Mining and Technology, Freiberg (Germany); MPI CPfS, Dresden (Germany); Schnelle, Walter; Burkhardt, Ulrich; Rosner, Helge [MPI CPfS, Dresden (Germany); Slebarski, Andrzej [Institute of Physics, University of Silesia, Katowice (Poland)

    2016-07-01

    While most Ce-based intermetallics contain either trivalent or intermediate-valent Ce ions, only for a few compounds a coexistence of both species has been reported. Here, we present a combined experimental and theoretical study based on thermodynamic measurements and spectroscopic data together with ab-initio electronic structure calculations aiming at exploring magnetic properties of Ce ions in two nonequivalent sites in Ce{sub 2}Rh{sub 3}Sn{sub 5}. Ce L{sub III} XAS spectra give direct evidence for valence fluctuations. Magnetization measurements show an onset of an antiferromagnetic order at T{sub N}∼2.5 K. The electronic structure calculations suggest that the magnetic ordering is related only to one Ce sublattice. This is in-line with a small entropy associated with the magnetic transition S{sub mag}∼0.35 R ln2 per Ce atom as revealed by the specific heat measurement. Furthermore, the temperature dependence of the magnetic susceptibility can be well described assuming that there are fluctuating moments of Ce{sup 3+} ions in one sublattice, whereas Ce atoms from the second sublattice are in a nonmagnetic intermediate valence state.

  9. Measurement of photonuclear cross sections from 30 to 140 MeV for intermediate and heavy mass nuclei (Sn, Ce, Ta, Pb and U)

    International Nuclear Information System (INIS)

    Lepretre, A.

    1982-06-01

    The total photonuclear absorption cross section for Sn, Ce, Ta, Pb and U has been studied from 25 to 140 MeV using a continuously variable monochromatic photon beam obtained from the annihilation in flight of monoenergetic positrons. The basic experimental results are a set of data giving sums of inclusive multiple photoneutron production cross sections of the form σsup(j) (Esub(γ) = Σsub(i=j)σ(γ,in) for neutron multiplicities ranging from j=1 to 12. From these data the total photonuclear absorption cross section σ(tot : Esub(γ)) has been deduced. It is concluded that Levinger's modified quasi-deuteron model describes the total cross sections reasonably well. When these data are combined with lower energy data and integrated to 140 MeV they indicate the need for an enhancement factor K for the Thomas-Reiche-Kuhn sum rule of 0.76+-0.10. No evidence was found that would indicate an A-dependence for the enhancement factor. From event-by-event records of observed photoneutron multiplicities it was also possible to determine the mean number of photoneutrons, antiν, for each photon energy and the widths W of the multiplicities distributions. From these measurements one also obtains the cross section for the formation of a compound nucleus state excited with the full energy of the absorbed photon [fr

  10. Production of 122Sb for the study of environmental pollution

    International Nuclear Information System (INIS)

    Mahdi Sadeghi; Mohammadreza Aboudzadeh; Parvin Sarabadani; Milad Enferadi

    2011-01-01

    This article presents, 122 Sb (T 1/2 = 2.723 days, I β- 97.59%) was produced via the nat Sn(p,xn) nuclear process at the AMIRS (Cyclone-30, IBA, Belgium). The electrodeposition experiments were carried out by potassium stannate trihydrate (K 2 Sn(OH) 6 ) and potassium hydroxide. The optimum conditions of the electrodeposition of tin were as follows: 40 g/L nat Sn, 20 g/L KOH, 115 g/L K 2 Sn(OH) 6 , DC current density of 5 A/dm 2 with a bath temperature of 75 deg C. The electroplated Tin-target was irradiated with 26.5 MeV protons at current of 180 μA for 20 min. Solvent extraction of no-carrier-added 122 Sb from irradiated Tin-natural target hydrochloric solution was investigated using di-n-butyl ether (C 8 H 18 O). Yields of about 3.61 MBq/μAh were experimentally obtained. (author)

  11. Thermochemistry of liquid Ni–Sb–Sn alloys

    Czech Academy of Sciences Publication Activity Database

    Mishra, R.; Kroupa, Aleš; Terzieff, P.; Ipser, H.

    2012-01-01

    Roč. 536, MAY (2012), s. 68-73 ISSN 0040-6031 R&D Projects: GA MŠk(CZ) OC08053 Institutional support: RVO:68081723 Keywords : Ni-Sb-Sn alloys * thermochemistry * vapor pressure measurements Subject RIV: BJ - Thermodynamics Impact factor: 1.989, year: 2012

  12. Source-specific speciation profiles of PM2.5 for heavy metals and their anthropogenic emissions in China.

    Science.gov (United States)

    Liu, Yayong; Xing, Jia; Wang, Shuxiao; Fu, Xiao; Zheng, Haotian

    2018-08-01

    Heavy metals are concerned for its adverse effect on human health and long term burden on biogeochemical cycling in the ecosystem. In this study, a provincial-level emission inventory of 13 kinds of heavy metals including V, Cr, Mn, Co, Ni, Cu, Zn, As, Cd, Sn, Sb, Ba and Pb from 10 anthropogenic sources was developed for China, based on the 2015 national emission inventory of primary particulate matters and source category-specific speciation profiles collected from 50 previous studies measured in China. Uncertainties associated with the speciation profiles were also evaluated. Our results suggested that total emissions of the 13 types of heavy metals in China are estimated at about 58000 ton for the year 2015. The iron production is the dominant source of heavy metal, contributing 42% of total emissions of heavy metals. The emissions of heavy metals vary significantly at regional scale, with largest amount of emissions concentrated in northern and eastern China. Particular, high emissions of Cr, Co, Ni, As and Sb (contributing 8%-18% of the national emissions) are found in Shandong where has large capacity of industrial production. Uncertainty analysis suggested that the implementation of province-specific source profiles in this study significantly reduced the emission uncertainties from (-89%, 289%) to (-99%, 91%), particularly for coal combustion. However, source profiles for industry sectors such as non-metallic mineral manufacturing are quite limited, resulting in a relative high uncertainty. The high-resolution emission inventories of heavy metals are essential not only for their distribution, deposition and transport studies, but for the design of policies to redress critical atmospheric environmental hazards at local and regional scales. Detailed investigation on source-specific profile in China are still needed to achieve more accurate estimations of heavy metals in the future. Copyright © 2018 Elsevier Ltd. All rights reserved.

  13. Studies on antimony absorption on Carbon steel (CS) and magnetite coated CS at high temperature to investigate the problem of out of core Sb activity in PHWRs

    International Nuclear Information System (INIS)

    Keny, S.J.; Gokhale, B.K.; Kumbhar, A.G.; Bera, Santanu; Velmurugan, S.

    2014-01-01

    Sb from PHT (primary heat transfer) pump bearings of PHWRs (Pressurized Heavy Water Reactors) goes to the reactor core and gets activated to 121 Sb and 123 Sb. Subsequently, it deposits on out of core surface resulting in radiation exposure to station personnel's apparent high decontamination factors. Sb, thus deposited can't be impassivated by normal decontamination process. Earlier studies indicates lattice substitution of Sb +3 for Fe +2 in magnetite at low doping levels (≤5%). This process, at reactor conditions is yet to be well understood. To formulate an adequate decontamination formulation and methodology and for having insight at Sb deposition mechanism under rector conditions studies are performed

  14. Antimony (Sb) sorption studies on zircaloy, carbon steel (CS) and magnetite coated CS (MCS) surfaces in aqueous medium at pH 10.2 and 280℃

    International Nuclear Information System (INIS)

    Keny, S.J.; Kumbhar, A.G.; Achary, S.N.; Basu, Saibal

    2014-01-01

    Antimony sorption studies on zircaloy, CS and magnetite coated carbon steel (MCS) at primary heat transport temperature (290℃) of pressurised heavy water reactor (PHWR) are of direct relevance in investigating Sb activity problem faced in Indian PHWRs. Sb impregnated PHT pump carbon bearing releases Sb to reactor core. This Sb activates, and redeposit on out-of-core surfaces and results in exposure and apparent high decontamination factors. This Sb is not amenable to normal decantation. The form and state of deposited Sb is not yet fully known. This works attempts for this

  15. Determination of the excitation energy and angular momentum of the quasi-projectiles produced in the heavy ion collisions Xe + Sn; Determination de l'energie d'excitation et du moment angulaire des quasi-projectiles produits dans les collisions d'ions lourds Xe + Sn

    Energy Technology Data Exchange (ETDEWEB)

    Genouin-Duhamel, Emmanuel [Lab. de Physique Corpusculaire, Caen Univ., 14 Caen (France)

    1999-04-08

    This work is a contribution to the study of properties of hot nuclei formed in heavy ion collisions at intermediate energies. The experiment has been performed with the INDRA multidetector. It is shown that most of the reaction cross section is associated with binary dissipative collisions, accompanied by the production of particles from a region between the two reaction partners. This study is focussed on excitation energy and angular momentum of projectile-like fragment (PLF) in {sup 129}Xe + {sup nat}Sn reactions from 25 to 50 MeV per nucleon. Several methods are used to characterize hot nuclei (velocity, charge, mass and excitation energy). All these methods are compared between them and indicate that high energies are deposited in the nuclei during collision (it may exceed the nucleus binding energy). The angular momentum transferred into intrinsic spin to PLF in the peripheral collisions has been deduced from angular distributions and kinetic energies of the emitted light charged particles (atomic number smaller ar equal to 2). Both methods agree qualitatively. The spin values decrease with the violence of the collision. These values correspond to values averaged over the whole deexcitation chain of nuclei. The predictions of transport models reproduce qualitatively the most peripheral collisions and suggest that high spins are transferred to PLF (from 30 to 50 {Dirac_h}). Larger angular momentum values are observed at the lowest incident energy. The time hierarchy in the evaporation process and the role of mid-rapidity emission are also discussed.

  16. Heavy stable isotopes of oxyanion-forming metals and metalloids (Cr, Se, U, Sb, and Te) as indicators of redox reactions: Theory, systematics, and the outlook for practical applications.

    Science.gov (United States)

    Johnson, T. M.

    2016-12-01

    The complex chemical behaviors of Cr, Se, U, Sb, and Te present challenges as we try to understand, predict, and/or manipulate their mobility, bioavailability, and toxicity in the environment. Redox reactions are particularly important and complex. In natural systems, aqueous concentrations and speciation can be used to infer the occurrence and rates of redox reactions, but are often of limited usefulness, for example when a reaction product is insoluble and its production is not readily observed in the field. Stable isotope ratio shifts in these elements can provide direct evidence for the occurrence of reduction, a critically important process that usually renders their soluble and mobile oxidized forms insoluble (or less soluble, in the case of Sb). Reduction kinetics differ between isotopes, and the remaining unreacted, oxidized contaminant becomes progressively shifted in its isotope ratio as reduction proceeds, providing a direct indicator of reduction in natural systems. Estimates of the extent of reduction are possible, but carry considerable uncertainty: The magnitude of isotopic fractionation induced by a reaction depends on the reaction mechanism and conditions, and thus prediction of fractionation factors for specific locations is uncertain. Furthermore, the simple Rayleigh distillation model is inaccurate due to complex reactive transport dynamics in aquifers and surface water systems. Nonetheless, useful estimates of reduction rates have been made and should be increasingly helpful as they are combined with other methods in environmental studies. Oxidation is less consistent in generating isotopic fractionation; this can be understood in terms of fundamental kinetic considerations. Furthermore, the reduced forms are usually solid and this further limits isotopic fractionation during oxidation. Sorption processes in some cases induce isotopic fractionation, but generally of smaller magnitude than reduction because bonding changes are relatively small

  17. The Research of Micro-structure and Gas Sensitivity of SnO2

    Directory of Open Access Journals (Sweden)

    Mingxin Song

    2014-07-01

    Full Text Available This paper adopts Sol-gel method and solid state reaction to make SnO2 matrix material and Sb2O3 is used as zuji to make SnO2 gas sensor under different sintering temperature. XRD analysis, SEM analysis and response time restoration test of working voltage sensitivity are choose to research SnO2 gas sensor constituents and influence factor on sensing properties by processing. Experiment results show that when the SnO2 make by sol-get method and Sb2O3 take up 2 %, Polyvinyl alcohol as an organic binder, platinum as catalyst, SnO2 gas sensor can get optimal integral sensing properties.

  18. Portuguese granites associated with Sn-W and Au mineralizations

    Directory of Open Access Journals (Sweden)

    Ana M.R. Neiva

    2002-01-01

    Full Text Available In northern and central Portugal, there are different tin-bearing granites. Most of them are of S-type, others have mixed characteristics of I-type and S-type granites and a few are of I-type. Tin-tungsten deposits are commonly associated with Hercynian tin-bearing S-type granites. Some quartz veins with wolframite are associated with an I-type granite, which has a low Sn content. In suites of tin-bearing S-type granitic rocks, Sn content increases as a function of the degree of fractional crystallization. Greisenizations of two-mica S-type granites associated with tin-tungsten mineralizations are accompanied by an increase in SiO2, H2O+, Sn, W, Nb, Ta, Rb, Zn, and Pb and decrease in MgO, Na2O, V, Sc,Zr, and Sr. The granite associated with the Jales gold deposit is of S-type and strongly differentiated like the tin-bearing S-type granites, but it has a very low Sn content. During fractional crystallization, Si, Rb, Sn, Pb, Au, As, Sb, and S increase. During increasing degree of hydrothermal alteration of this granite at the gold-quartz vein walls, there are progressive increases in K2O, H2O+, Sn, Cs, Cu, Pb, Au, Sb, As, and S.

  19. Etude de noyaux riches en neutrons dans la région du coeur doublement magique de ¹³²Sn

    OpenAIRE

    Gey , Guillaume

    2014-01-01

    Evolution of nuclear structure in the vicinity of the doubly magic nuclei 132Sn will be discussed in this work, through the spectroscopy of 136Sb, 136Sn and 138Sn isotopes. Several Sb and Sn known isotopes beyond the Z=50 and N=82 shell closures will be briefly presented in the first chapter, aswell as some of the problems arising from the current shell model descritpion of nuclei in this region. Reader will also find in the same chapter a brief description of the most important tools needed ...

  20. Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Useong; Park, Chulkwon; Kim, Rokyeon; Mun, Hyo Sik; Kim, Hoon Min; Kim, Namwook; Yu, Jaejun; Char, Kookrin, E-mail: kchar@phya.snu.ac.kr [Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Ha, Taewoo; Kim, Jae Hoon [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Hyung Joon; Kim, Tai Hoon; Kim, Kee Hoon [Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-05-01

    We studied the conduction mechanism in Sb-doped BaSnO{sub 3} epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO{sub 3}. We found that the electron mobility in BaSnO{sub 3} films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO{sub 3} system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO{sub 3} films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

  1. Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

    Directory of Open Access Journals (Sweden)

    Useong Kim

    2014-05-01

    Full Text Available We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO3 system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO3 films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

  2. The ‘sub’ metallide oxide hydrides Sr{sub 21}Si{sub 2}O{sub 5}H{sub 12+x} and Ba{sub 21}M{sub 2}O{sub 5}H{sub 12+x} (M = Zn, Cd, Hg, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Jehle, Michael; Hoffmann, Anke [Institut für Anorganische und Analytische Chemie, Albert-Ludwigs-Universität Freiburg, Albertstr. 21, D-79104 Freiburg (Germany); Kohlmann, Holger [Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, D-04103 Leipzig (Germany); Scherer, Harald [Institut für Anorganische und Analytische Chemie, Albert-Ludwigs-Universität Freiburg, Albertstr. 21, D-79104 Freiburg (Germany); Röhr, Caroline, E-mail: caroline@ruby.chemie.uni-freiburg.de [Institut für Anorganische und Analytische Chemie, Albert-Ludwigs-Universität Freiburg, Albertstr. 21, D-79104 Freiburg (Germany)

    2015-02-25

    Highlights: • The sub metallide oxide hydrides (Sr/Ba){sub 21}M{sub 2}O{sub 5}H{sub 12+x} were prepared for 14 M elements. • M covers a wide range of elements, from the Zn group to the pentels. • The ionic partial structure contains isolated M anions and suboxide clusters [O{sub 5}A{sub 18}]. • The H-content was determined by neutron diffraction and {sup 1}H/{sup 2}D MAS-NMR spectroscopy. • Band structure calculations support the H/D content and distribution. - Abstract: The title compounds sporting a great variety of anions M of different formal charges have been synthesized from melts of the composition A:M:O:H/D = 21:2:5:24, using BaH{sub 2}/SrH{sub 2} as hydrogen sources. All phases were characterized by means of single crystal X-ray data [cubic, space group Fd3{sup ¯}m; Sr{sub 21}Si{sub 2}O{sub 5}H{sub 12+x}: a = 1911.90(1) pm, R1 = 0.0201; for the barium phases with Zn (a = 2041.7(3) pm, R1 = 0.077), Cd (a = 2063.3(1) pm, R1 = 0.051), Hg (a = 2050.7(1) pm, R1 = 0.059), In (a = 2060.7(1) pm, R1 = 0.101), Tl (a = 2068.1(10) pm, R1 = 0.0485), Si (a = 2033.6(1) pm, R1 = 0.045), Ge (a = 2035.6(1) pm, R1 = 0.037), Sn (a = 2053.2(2) pm, R1 = 0.054), Pb (a = 2059.7(1) pm, R1 = 0.056), As (a = 2023.0(3) pm, R1 = 0.087), Sb (a = 2041.9(1) pm, R1 = 0.067) and Bi (a = 2045.9(1) pm, R1 = 0.075)]. Neutron powder diffraction data collected for the Ba silicide (both H and D compound) were refined by the Rietveld method (a = 2037.0(1), R{sub p} = 0.0173; wR{sub p} = 0.0304, R(F{sup 2}) = 0.086). The statistically occupied (H/D)(1) site 96g, which corresponds to the carbon position inSr{sub 21}Si{sub 2}O{sub 5}C{sub 6}, together with two further sparsely occupied sites (H/D)(2,3), yields the overall composition Ba{sub 21}Si{sub 2}O{sub 5}D{sub 14}. The hydrogen content, its chemical character and the distribution among the three H/D positions was evaluated by {sup 1}H/{sup 2}H MAS NMR spectroscopy for the Si, Ge and Sb compound. The crystal structure exhibits two

  3. Spectroscopy of few-particle nuclei around magic 132Sn from fission product γ-ray studies

    International Nuclear Information System (INIS)

    Zhang, C. T.

    1998-01-01

    We are studying the yrast structure of very neutron-rich nuclei around doubly magic 132 Sn by analyzing fission product γ-ray data from a 248 Cm source at Eurogam II. Yrast cascades in several few-valence-particle nuclei have been identified through γγ cross coincidences with their complementary fission partners. Results for two-valence-particle nuclei 132 Sb, 134 Te, 134 Sb and 134 Sn provide empirical nucleon-nucleon interactions which, combined with single-particle energies already known in the one-particle nuclei, are essential for shell-model analysis in this region. Findings for the N = 82 nuclei 134 Te and 135 I have now been extended to the four-proton nucleus 136 Xe. Results for the two-neutron nucleus 134 Sn and the N = 83 isotones 134 Sb, 135 Te and 135 I open up the spectroscopy of nuclei in the northeast quadrant above 132 Sn

  4. Evaluation of potential dietary toxicity of heavy metals in some common Nigerian beverages: A look at antimony, tin and mercury

    Directory of Open Access Journals (Sweden)

    I.I. Roberts

    2011-11-01

    Full Text Available There is currently little information on the composition of heavy metals in beverages imported and locally produced in Nigeria. The study quantitatively determined the composition of antimony (Sb, tin (Sn and mercury (Hg in 50 different beverage samples and evaluated the extent of violation of guideline values. Analysis of the beverage samples for the presence of Sb, Sn, and Hg was carried out using an atomic absorption spectrophotometer (AAS 929. The mean values detected for mercury, tin and antimony (±SE in fruit juices and soft drinks were 2.39±0.25, 3.66±0.22 and 0.49±0.048 μg/l; 2.93±0.34, 3.60±0.46 and 0.49±0.10 μg/l in dairy drinks and 0.94±0.02, 4.34±0.48 and 0.48±0.05 μg/l in bottled water samples respectively. While antimony detected in all products was below guideline values, mercury and tin were above the acceptable levels established by the World Health Organization, United States Environmental Protection Agency and European Union in most samples tested.

  5. Simultaneous removal of Cd(II) and Sb(V) by Fe–Mn binary oxide: Positive effects of Cd(II) on Sb(V) adsorption

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ruiping [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); Liu, Feng [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Hu, Chengzhi, E-mail: czhu@rcees.ac.cn [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); He, Zan [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Liu, Huijuan; Qu, Jiuhui [Key Laboratory of Drinking Water Science and Technology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085 (China)

    2015-12-30

    Highlights: • Fe–Mn binary oxide achieves the simultaneous removal of Cd(II) and Sb(V). • Cd(II) at above 0.25 mmol/L improves Sb(V) adsorption onto FMBO. • Cd(II) improves more significant Sb(V) adsorption than Ca{sup 2+} and Mn{sup 2+}. • Sb(V) adsorption decreases whereas Cd(II) adsorption increases with elevated pH. • The increased ζ-potential and Cd(II)–Sb(V) precipitation favors Sb(V) adsorption. - Abstract: The coexistence of cadmium ion (Cd(II)) and antimonate (Sb(V)) creates the need for their simultaneous removal. This study aims to investigate the effects of positively-charged Cd(II) on the removal of negative Sb(V) ions by Fe–Mn binary oxide (FMBO) and associated mechanisms. The maximum Sb(V) adsorption density (Q{sub max,Sb(V)}) increased from 1.02 to 1.32 and 2.01 mmol/g in the presence of Cd(II) at 0.25 and 0.50 mmol/L. Cd{sup 2+} exhibited a more significant positive effect than both calcium ion (Ca{sup 2+}) and manganese ion (Mn{sup 2+}). Cd{sup 2+} showed higher affinity towards FMBO and increased its ζ-potential more significantly compared to Ca{sup 2+} and Mn{sup 2+}. The simultaneous adsorption of Sb(V) and Cd(II) onto FMBO can be achieved over a wide initial pH (pH{sub i}) range from 2 to 9, and Q{sub Sb(V)} decreases whereas Q{sub Cd(II)} increases with elevated pH{sub i}. Their combined values, as expressed by Q{sub Sb(V)+Cd(II)}, amount to about 2 mmol/g and vary slightly in the pH{sub i} range 4–9. FTIR and XPS spectra indicate the significant synergistic effect of Cd(II) on Sb(V) adsorption onto FMBO, and that little chemical valence transformation occurs. These results may be valuable for the treatment of wastewater with coexisting heavy metals such as Cd(II) and Sb(V).

  6. Investigation of the radioactive and heavy metal pollution of the danube Delta lacustrine sediments and soil

    International Nuclear Information System (INIS)

    Dinescu, L.C.; Ciortea, C.; Fluerasu, D.; Stoica, P.; Duliu, O.G.; Stoica, P.

    2005-01-01

    Results obtained for five lacustrine sediment cores and three soil samples, collected in 1996 from Danube Delta, by using INAA, ICP-MS, and TTPIXE analytical methods, are presented. The measured vertical profiles identified as possible pollutants the following elements: Al, Cu, Zn, As, Ag, Cd, In, Sn, Sb, Hg, Tl, Pb, and Bi. In the sediment cores, the determined elements, except V and Ni, show near-surface enrichment relative to the lower part (1.3-3 enrichment factor, except 5 - 7 for Cd and Hg). In some few cases, As, Cd, Cu, Cr, Mn, and Pb exceeded the minimum threshold of safety defined by the Romanian legislation. For soil samples, increased (1.5-3 times) values at surface in comparison with the 30 cm depth was also found, but values much lower compared to lacustrine sediments, indicating the riverine transport as the main source of heavy-metal near-surface contamination of the lacustrine sediments

  7. The high-temperature modification of LuAgSn and high-pressure high-temperature experiments on DyAgSn, HoAgSn, and YbAgSn

    Energy Technology Data Exchange (ETDEWEB)

    Heying, B.; Rodewald, U.C.; Hermes, W.; Schappacher, F.M.; Riecken, J.F.; Poettgen, R. [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Heymann, G.; Huppertz, H. [Muenchen Univ. (Germany). Dept. fuer Chemie und Biochemie; Sebastian, C.P. [Max-Planck-Institut fuer Chemische Physik Fester Stoffe, Dresden (Germany)

    2008-02-15

    The high-temperature modification of LuAgSn was obtained by arc-melting an equiatomic mixture of the elements followed by quenching the melt on a water-cooled copper crucible. HT-LuAgSn crystallizes with the NdPtSb-type structure, space group P6{sub 3}mc: a = 463.5(1), c = 723.2(1) pm, wR2 = 0.0270, 151 F{sup 2}, and 11 variables. The silver and tin atoms build up two-dimensional, puckered [Ag{sub 3}Sn{sub 3}] networks (276 pm Ag-Sn) that are charge-balanced and separated by the lutetium atoms. The Ag-Sn distances between the [Ag{sub 3}Sn{sub 3}] layers of 294 pm are much longer. Single crystals of isotypic DyAgSn (a = 468.3(1), c = 734.4(1) pm, wR2 = 0.0343, 411 F{sup 2}, and 11 variables) and HoAgSn (a = 467.2(1), c = 731.7(2) pm, wR2 = 0.0318, 330 F{sup 2}, and 11 variables) were obtained from arc-melted samples. Under high-pressure (up to 12.2 GPa) and high-temperature (up to 1470 K) conditions, no transitions to a ZrNiAl-related phase have been observed for DyAgSn, HoAgSn, and YbAgSn. HT-TmAgSn shows Curie-Weiss paramagnetism with {mu}{sub eff} = 7.53(1) {mu}{sub B}/Tm atom and {theta}P = -15.0(5) K. No magnetic ordering was evident down to 3 K. HT-LuAgSn is a Pauli paramagnet. Room-temperature {sup 119}Sn Moessbauer spectra of HT-TmAgSn and HT-LuAgSn show singlet resonances with isomer shifts of 1.78(1) and 1.72(1) mm/s, respectively. (orig.)

  8. Heavy metals in human teeth dentine: A bio-indicator of metals exposure and environmental pollution.

    Science.gov (United States)

    Asaduzzaman, Khandoker; Khandaker, Mayeen Uddin; Binti Baharudin, Nurul Atiqah; Amin, Yusoff Bin Mohd; Farook, Mohideen Salihu; Bradley, D A; Mahmoud, Okba

    2017-06-01

    With rapid urbanization and large-scale industrial activities, modern human populations are being increasingly subjected to chronic environmental heavy metal exposures. Elemental uptake in tooth dentine is a bioindicator, the uptake occurring during the formation and mineralization processes, stored to large extent over periods of many years. The uptake includes essential elements, most typically geogenic dietary sources, as well as non-essential elements arising through environmental insults. In this study, with the help of the Dental Faculty of the University of Malaya, a total of 50 separate human teeth were collected from dental patients of various ethnicity, age, gender, occupation, dietary habit, residency, etc. Analysis was conducted using inductively coupled plasma-mass spectrometry (ICP-MS), most samples indicating the presence of the following trace elements, placed in order of concentration, from least to greatest: As, Mn, Ba, Cu, Cr, Pb, Zn, Hg, Sb, Al, Sr, Sn. The concentrations have been observed to increase with age. Among the ethnic groups, the teeth of ethnic Chinese showed marginally greater metal concentrations than those of the Indians and Malays, the teeth dentine of females generally showing greater concentrations than that of males. Greater concentrations of Hg, Cu and Sn were found in molars while Pb, Sr, Sb and Zn were present in greater concentrations in incisors. With the elevated concentration levels of heavy metals in tooth dentine reflecting pollution from industrial emissions and urbanization, it is evident that human tooth dentine can provide chronological information on exposure, representing a reliable bio-indicator of environmental pollution. Copyright © 2017 Elsevier Ltd. All rights reserved.

  9. Heavy metal pollution and Pb isotopic tracing in the intertidal surface sediments of Quanzhou Bay, southeast coast of China

    International Nuclear Information System (INIS)

    Yu, Ruilian; Zhang, Weifang; Hu, Gongren; Lin, Chengqi; Yang, Qiuli

    2016-01-01

    Concentrations of 16 heavy metals and Pb isotopic ratios in the intertidal surface sediments of Quanzhou Bay were determined to study the pollution level of heavy metals and the sources of Pb. The results showed that most concentrations of Cd, Sn, Mn, Cu, Zn, Cr, Pb, Hg, Ni, Co, Cs, Fe and V were higher than the background values, while most concentrations of Ti, Sb and Sr were lower than the background values. The mean concentrations of Cu, Zn, Pb, Cr and Cd exceeded the first-grade criteria of Chinese marine sediment quality. The geo-accumulation indexes revealed that the sediments had been polluted by some heavy metals. The results of Pb isotopic tracing indicated that the total Pb in the sediments were mainly from parent material, industrial emission and vehicle exhaust with the mean contributions of 38.2%, 51.3% and 10.5%, respectively, calculated by a three-end-member model of Pb isotopic ratios. - Highlights: •Level of 16 heavy metals in intertidal surface sediments of Quanzhou Bay was studied. •The sediments had been polluted by some heavy metals including Pb. •Pb isotopic compositions in the sediments and the potential sources were determined. •A three-end member model was applied to estimate the contributions of Pb sources. •Industrial emission was the major anthropogenic Pb contributor in the sediments.

  10. Synthesis and characterization of Sn-rich Ni-Sb-Sn nanosolders

    Czech Academy of Sciences Publication Activity Database

    Mishra, R.; Zemanová, Adéla; Kroupa, Aleš; Flandorfer, H.; Ipser, H.

    2012-01-01

    Roč. 513, - (2012), s. 224-229 ISSN 0925-8388 R&D Projects: GA MŠk(CZ) LD11024; GA MŠk(CZ) MEB061005 Institutional research plan: CEZ:AV0Z20410507 Keywords : metal s and alloys * nanostructured materials * nanosolders Subject RIV: BJ - Thermodynamics Impact factor: 2.390, year: 2012

  11. Interconnection of thermal parameters, microstructure and mechanical properties in directionally solidified Sn–Sb lead-free solder alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dias, Marcelino; Costa, Thiago [Department of Manufacturing and Materials Engineering, University of Campinas — UNICAMP, 13083-860 Campinas, SP (Brazil); Rocha, Otávio [Federal Institute of Education, Science and Technology of Pará — IFPA, 66093-020 Belém, PA (Brazil); Spinelli, José E. [Department of Materials Engineering, Federal University of São Carlos — UFSCar, 13565-905 São Carlos, SP (Brazil); Cheung, Noé, E-mail: cheung@fem.unicamp.br [Department of Manufacturing and Materials Engineering, University of Campinas — UNICAMP, 13083-860 Campinas, SP (Brazil); Garcia, Amauri [Department of Manufacturing and Materials Engineering, University of Campinas — UNICAMP, 13083-860 Campinas, SP (Brazil)

    2015-08-15

    Considerable effort is being made to develop lead-free solders for assembling in environmental-conscious electronics, due to the inherent toxicity of Pb. The search for substitute alloys of Pb–Sn solders has increased in order to comply with different soldering purposes. The solder must not only meet the expected levels of electrical performance but may also have appropriate mechanical strength, with the absence of cracks in the solder joints. The Sn–Sb alloy system has a range of compositions that can be potentially included in the class of high temperature solders. This study aims to establish interrelations of solidification thermal parameters, microstructure and mechanical properties of Sn–Sb alloys (2 wt.%Sb and 5.5 wt.%Sb) samples, which were directionally solidified under cooling rates similar to those of reflow procedures in industrial practice. A complete high-cooling rate cellular growth is shown to be associated with the Sn–2.0 wt.%Sb alloy and a reverse dendrite-to-cell transition is observed for the Sn–5.5 wt.%Sb alloy. Strength and ductility of the Sn–2.0 wt.%Sb alloy are shown not to be affected by the cellular spacing. On the other hand, a considerable variation in these properties is associated with the cellular region of the Sn–5.5 wt.%Sb alloy casting. - Graphical abstract: Display Omitted - Highlights: • The microstructure of the Sn–2 wt.%Sb alloy is characterized by high-cooling rates cells. • Reverse dendrite > cell transition occurs for Sn–5.5 wt.%Sb alloy: cells prevail for cooling rates > 1.2 K/s. • Sn–5.5 wt.%Sb alloy: the dendritic region occurs for cooling rates < 0.9 K/s. • Sn–5.5 wt.%Sb alloy: tensile properties are improved with decreasing cellular spacing.

  12. Gamma-ray spectroscopy of nuclei near {sup 100}Sn

    Energy Technology Data Exchange (ETDEWEB)

    Seweryniak, D; Nyberg, J; Fahlander, C [Uppsala Univ. (Sweden). Dept. of Radiation Sciences; Cederwall, B; Norline, L; Johnson, A; Kerek, A [Manne Siegbahn Inst. of Physics, Stockholm (Sweden); [Royal Inst. of Tech., Stockholm (Sweden); Adamides, E [National Centre for Scientific Research, Ag. Paraskevi, Attiki (Greece); Atac, A; Piiparinen, M; Sletten, G [Niels Bohr Inst., Copenhagen (Denmark); Angelis, G de [Laboratori Nazionali di legnaro (Italy); Grawe, H; Schubart, R [Hahn-Meitner-Institut Berlin GmbH (Germany); Ideguchi, E; Mitarai, S [Kyushu Univ., Fukuoka (Japan). Dept. of Physics; Julin, R; Juutinen, S; Tormanen, S; Virtanen, A [Jyvaeskylae Univ. (Finland). Dept. of Physics; Karczmarczyk, W; Kownacki, J [Warsaw Univ. (Poland)

    1992-08-01

    Proton rich nuclei close to {sup 100}Sn have been investigated in an in-beam {gamma}-ray spectroscopic study using the NORDBALL detector array, including arrays of charged particle and neutron detectors. Excited states were identified for the first time in {sup 102}In, {sup 106,107,108}Sb and tentatively in {sup 108,109}Te. The nucleus {sup 110}Te was also populated and studied for the first time in an in-beam experiment. (author). 4 figs.

  13. Probing the magnetic ground state of single crystalline Ce3TiSb5

    Science.gov (United States)

    Matin, M.; Kulkarni, R.; Thamizhavel, A.; Dhar, S. K.; Provino, A.; Manfrinetti, P.

    2017-04-01

    Motivated by the report of superconductivity in R3TiSb5 (R  =  La and Ce) and possibly Nd3TiSb5 at  ∼4 K, we grew single crystals of La3TiSb5 and Ce3TiSb5 by the high-temperature solution method using Sn as a flux. While in both compounds we observed a superconducting transition at 3.7 K for resistivity and low-field magnetization, our data conclusively show that it arose from residual Sn flux present in the single crystals. In particular, the heat capacity data do not present any of the anomalies expected from a bulk superconducting transition. The anisotropic magnetic properties of Ce3TiSb5, crystallizing in a hexagonal P63/mcm structure, were studied in detail. We find that the Ce ions in Ce3TiSb5 form a Kondo lattice and exhibited antiferromagnetic ordering at 5.5 K with a reduced moment and a moderately normalized Sommerfeld coefficient of 598 mJ/mol K2. The characteristic single-ion Kondo energy scale was found to be  ∼8 K. The magnetization data were subjected to a crystal electric field (CEF) analysis. The experimentally observed Schottky peak in the 4f-electron heat capacity of Ce3TiSb5 was reproduced fairly well by the energy levels derived from the CEF analysis.

  14. Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

    Science.gov (United States)

    Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

    2018-05-01

    A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

  15. HPLC method for determination of SN-38 content and SN-38 entrapment efficiency in a novel liposome-based formulation, LE-SN38.

    Science.gov (United States)

    Xuan, Tong; Zhang, J Allen; Ahmad, Imran

    2006-05-03

    A simple HPLC method was developed for quantification of SN-38, 7-ethyl-10-hydroxycamptothecin, in a novel liposome-based formulation (LE-SN38). The chromatographic separation was achieved on an Agilent Zorbax SB-C18 (4.6 mmx250 mm, 5 microm) analytical column using a mobile phase consisting of a mixture of NaH2PO4 (pH 3.1, 25 mM) and acetonitrile (50:50, v/v). SN-38 was detected at UV wavelength of 265 nm and quantitatively determined using an external calibration method. The limit of detection (LOD) and limit of quantitation (LOQ) were found to be 0.05 and 0.25 microg/mL, respectively. The individual spike recovery of SN-38 ranged from 100 to 101%. The percent of relative standard deviation (%R.S.D.) of intra-day and inter-day analyses were less than 1.6%. The method validation results confirmed that the method is specific, linear, accurate, precise, robust and sensitive for its intended use. The current method was successfully applied to the determination of SN-38 content and drug entrapment efficiency in liposome-based formulation, LE-SN38 during early stage formulation development.

  16. Radiation measurements by pn junction InSb detector at the temperature from 4.2 K to 115 K

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yoshihara, Fumiki; Nouchi, Ryo; Sugiura, Osamu; Murase, Yasuhiro; Nakamura, Tatsuya; Katagiri, Masaki

    2003-01-01

    We fabricated the pn junction-type detectors on a p-type InSb substrate. Both sides of the InSb substrate were etched using a mixture of nitric and lactic acids. On the top side surface, Sn and Al were deposited by heat evaporation and then the Sn was diffused into the p-type InSb by lamp annealing and resulted in the n-type layer. Based on the confirmation of the performance of the InSb detector at temperatures of 0.5 K and 4.2 K, we concentrated on the measurement of alpha particles by the pm junction-type InSb detectors at higher operating temperatures of up to 115 K. The InSb detector showed a wide temperature operating range. We can conclude that all of the voltage was induced slowly by the holes at 4.2 K and mainly as a result of electrons at 77 K. (T. Tanaka)

  17. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Science.gov (United States)

    Hart, John; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James

    2016-03-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  18. DWPF SB6 Initial CPC Flowsheet Testing SB6-1 TO SB6-4L Tests Of SB6-A And SB6-B Simulants

    International Nuclear Information System (INIS)

    Lambert, D.; Pickenheim, B.; Best, D.

    2009-01-01

    The Defense Waste Processing Facility (DWPF) will transition from Sludge Batch 5 (SB5) processing to Sludge Batch 6 (SB6) processing in late fiscal year 2010. Tests were conducted using non-radioactive simulants of the expected SB6 composition to determine the impact of varying the acid stoichiometry during the Sludge Receipt and Adjustment Tank (SRAT) and Slurry Mix Evaporator (SME) processes. The work was conducted to meet the Technical Task Request (TTR) HLW/DWPF/TTR-2008-0043, Rev.0 and followed the guidelines of a Task Technical and Quality Assurance Plan (TT and QAP). The flowsheet studies are performed to evaluate the potential chemical processing issues, hydrogen generation rates, and process slurry rheological properties as a function of acid stoichiometry. These studies were conducted with the estimated SB6 composition at the time of the study. This composition assumed a blend of 101,085 kg of Tank 4 insoluble solids and 179,000 kg of Tank 12 insoluble solids. The current plans are to subject Tank 12 sludge to aluminum dissolution. Liquid Waste Operations assumed that 75% of the aluminum would be dissolved during this process. After dissolution and blending of Tank 4 sludge slurry, plans included washing the contents of Tank 51 to ∼1M Na. After the completion of washing, the plan assumes that 40 inches on Tank 40 slurry would remain for blending with the qualified SB6 material. There are several parameters that are noteworthy concerning SB6 sludge: (1) This is the second batch DWPF will be processing that contains sludge that has had a significant fraction of aluminum removed through aluminum dissolution; (2) The sludge is high in mercury, but the projected concentration is lower than SB5; (3) The sludge is high in noble metals, but the projected concentrations are lower than SB5; and(4) The sludge is high in U and Pu - components that are not added in sludge simulants. Six DWPF process simulations were completed in 4-L laboratory-scale equipment using

  19. Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

    Energy Technology Data Exchange (ETDEWEB)

    Kalkan, B. [Advanced Light Source, Lawrence Berkeley Laboratory, Berkeley, California 20015 (United States); Edwards, T. G.; Sen, S. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Raoux, S. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2013-08-28

    The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ∼5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous →β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ∼2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

  20. Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

    Science.gov (United States)

    Kalkan, B.; Edwards, T. G.; Raoux, S.; Sen, S.

    2013-08-01

    The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ˜5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous → β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ˜2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression.

  1. Nature of metastable amorphous-to-crystalline reversible phase transformations in GaSb

    International Nuclear Information System (INIS)

    Kalkan, B.; Edwards, T. G.; Sen, S.; Raoux, S.

    2013-01-01

    The structural, thermodynamic, and kinetic aspects of the transformations between the metastable amorphous and crystalline phases of GaSb are investigated as a function of pressure at ambient temperature using synchrotron x-ray diffraction experiments in a diamond anvil cell. The results are consistent with the hypothesis that the pressure induced crystallization of amorphous GaSb into the β-Sn crystal structure near ∼5 GPa is possibly a manifestation of an underlying polyamorphic phase transition between a semiconducting, low density and a metallic, high density amorphous (LDA and HDA, respectively) phases. In this scenario, the large differences in the thermal crystallization kinetics between amorphous GaSb deposited in thin film form by sputtering and that prepared by laser melt quenching may be related to the relative location of the glass transition temperature of the latter in the pressure-temperature (P-T) space with respect to the location of the critical point that terminate the LDA ↔ HDA transition. The amorphous →β-Sn phase transition is found to be hysteretically reversible as the β-Sn phase undergoes decompressive amorphization near ∼2 GPa due to the lattice instabilities that give rise to density fluctuations in the crystal upon decompression

  2. Characterization study of heavy metal-bearing phases in MSW slag

    International Nuclear Information System (INIS)

    Saffarzadeh, Amirhomayoun; Shimaoka, Takayuki; Motomura, Yoshinobu; Watanabe, Koichiro

    2009-01-01

    Slag products derived from the pyrolysis/melting and plasma/melting treatment of municipal solid waste (MSW) in Japan were examined for the characterization study of heavy metal-bearing phases using petrographic techniques. Detailed microscopic observations revealed that the shapes of heavy metal-rich inclusions are generally spherical to semi-spherical and their sizes range from submicron to scarcely large size spheres (over 100 μm). The experiments (both optical microscopy and electron probe microanalysis) indicated that Fe and Cu participate in mutual substitution and different proportions, and form mainly two-phase Fe-Cu alloys that bound in the silicate glass. This alloy characterizes the composition of more than 80% of the metal-rich inclusions. Other metals and non-metals (such as Pb, Ni, Sb, Sn, P, Si, Al and S) with variable amounts and uneven distributions are also incorporated in the Fe-Cu alloy. In average, the bulk concentration of heavy metals in samples from pyrolysis/melting type is almost six times greater than samples treated under plasma/arc processing. The observations also confirmed that slag from pyrolysis origin contains remarkably higher concentration of metallic inclusions than slag from plasma treatment. In the latter, the metallic compounds are separately tapped from molten slag during the melting treatment that might lead to the generation of safer slag product for end users from environmental viewpoint.

  3. Preparation and oxidation resistance of single crystalline β-Zn{sub 4}Sb{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hong-xia; Deng, Shu-ping [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Li, De-cong [Photoelectric Engineering College, Yunnan Open University, Kunming 650500 (China); Shen, Lan-xian; Cheng, Feng; Wang, Jin-song [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China); Deng, Shu-kang, E-mail: skdeng@126.com [Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming 650500 (China)

    2016-11-01

    This study prepared a Zn-rich single crystal β-Zn{sub 4}Sb{sub 3} using a Sn flux method based on the stoichiometric ratios of Zn{sub 4.4}Sb{sub 3}Sn{sub 3}. The oxidation resistance of the sample was determined by exploring the effects of heat treatment in air on electrical transport properties and thermal stability, which is of practical importance in the application of the material at high temperatures. Results showed that the prepared sample possessed high electrical transport properties, with a high power factor of 1.67×10{sup −3} W m{sup −1} K{sup −2} at 563 K. The heat treatment in air weakened the electrical conductivity of the single crystalline β-Zn{sub 4}Sb{sub 3}, whereas the Seebeck coefficients were rarely independent of the annealing condition. Eventually, the power factor obtained after the first heating at 523 K for 4 h became comparable to that of the as-prepared sample, although it decreased after the second heating at 573 K for 5 h. Nevertheless, the single crystalline β-Zn{sub 4}Sb{sub 3} still possessed a good thermal stability after the heat treatment process.

  4. Simultaneous removal of Cd(II) and Sb(V) by Fe–Mn binary oxide: Positive effects of Cd(II) on Sb(V) adsorption

    International Nuclear Information System (INIS)

    Liu, Ruiping; Liu, Feng; Hu, Chengzhi; He, Zan; Liu, Huijuan; Qu, Jiuhui

    2015-01-01

    Highlights: • Fe–Mn binary oxide achieves the simultaneous removal of Cd(II) and Sb(V). • Cd(II) at above 0.25 mmol/L improves Sb(V) adsorption onto FMBO. • Cd(II) improves more significant Sb(V) adsorption than Ca"2"+ and Mn"2"+. • Sb(V) adsorption decreases whereas Cd(II) adsorption increases with elevated pH. • The increased ζ-potential and Cd(II)–Sb(V) precipitation favors Sb(V) adsorption. - Abstract: The coexistence of cadmium ion (Cd(II)) and antimonate (Sb(V)) creates the need for their simultaneous removal. This study aims to investigate the effects of positively-charged Cd(II) on the removal of negative Sb(V) ions by Fe–Mn binary oxide (FMBO) and associated mechanisms. The maximum Sb(V) adsorption density (Q_m_a_x_,_S_b_(_V_)) increased from 1.02 to 1.32 and 2.01 mmol/g in the presence of Cd(II) at 0.25 and 0.50 mmol/L. Cd"2"+ exhibited a more significant positive effect than both calcium ion (Ca"2"+) and manganese ion (Mn"2"+). Cd"2"+ showed higher affinity towards FMBO and increased its ζ-potential more significantly compared to Ca"2"+ and Mn"2"+. The simultaneous adsorption of Sb(V) and Cd(II) onto FMBO can be achieved over a wide initial pH (pH_i) range from 2 to 9, and Q_S_b_(_V_) decreases whereas Q_C_d_(_I_I_) increases with elevated pH_i. Their combined values, as expressed by Q_S_b_(_V_)_+_C_d_(_I_I_), amount to about 2 mmol/g and vary slightly in the pH_i range 4–9. FTIR and XPS spectra indicate the significant synergistic effect of Cd(II) on Sb(V) adsorption onto FMBO, and that little chemical valence transformation occurs. These results may be valuable for the treatment of wastewater with coexisting heavy metals such as Cd(II) and Sb(V).

  5. Properties and Microstructures of Sn-Bi-X Lead-Free Solders

    Directory of Open Access Journals (Sweden)

    Fan Yang

    2016-01-01

    Full Text Available The Sn-Bi base lead-free solders are proposed as one of the most popular alloys due to the low melting temperature (eutectic point: 139°C and low cost. However, they are not widely used because of the lower wettability, fatigue resistance, and elongation compared to traditional Sn-Pb solders. So the alloying is considered as an effective way to improve the properties of Sn-Bi solders with the addition of elements (Al, Cu, Zn, Ga, Ag, In, Sb, and rare earth and nanoparticles. In this paper, the development of Sn-Bi lead-free solders bearing elements and nanoparticles was reviewed. The variation of wettability, melting characteristic, electromigration, mechanical properties, microstructures, intermetallic compounds reaction, and creep behaviors was analyzed systematically, which can provide a reference for investigation of Sn-Bi base solders.

  6. Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pdborges@gmail.com [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J. [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Scolfaro, L. [Department of Physics, Texas State University, 78666 San Marcos, TX (United States)

    2015-11-15

    Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

  7. Ab initio study of thermoelectric properties of doped SnO_2 superlattices

    International Nuclear Information System (INIS)

    Borges, P.D.; Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J.; Scolfaro, L.

    2015-01-01

    Transparent conductive oxides, such as tin dioxide (SnO_2), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO_2, as well as of Sb and Zn planar (or delta)-doped layers in SnO_2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO_2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO_2-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO_2 superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

  8. Applications of thermodynamic calculations to Mg alloy design: Mg-Sn based alloy development

    International Nuclear Information System (INIS)

    Jung, In-Ho; Park, Woo-Jin; Ahn, Sang Ho; Kang, Dae Hoon; Kim, Nack J.

    2007-01-01

    Recently an Mg-Sn based alloy system has been investigated actively in order to develop new magnesium alloys which have a stable structure and good mechanical properties at high temperatures. Thermodynamic modeling of the Mg-Al-Mn-Sb-Si-Sn-Zn system was performed based on available thermodynamic, phase equilibria and phase diagram data. Using the optimized database, the phase relationships of the Mg-Sn-Al-Zn alloys with additions of Si and Sb were calculated and compared with their experimental microstructures. It is shown that the calculated results are in good agreement with experimental microstructures, which proves the applicability of thermodynamic calculations for new Mg alloy design. All calculations were performed using FactSage thermochemical software. (orig.)

  9. Distribution, speciation and availability of antimony (Sb) in soils and terrestrial plants from an active Sb mining area

    International Nuclear Information System (INIS)

    Okkenhaug, Gudny; Zhu Yongguan; Luo Lei; Lei Ming; Li Xi; Mulder, Jan

    2011-01-01

    Here, we present one of the first studies investigating the mobility, solubility and the speciation-dependent in-situ bioaccumulation of antimony (Sb) in an active Sb mining area (Xikuangshan, China). Total Sb concentrations in soils are high (527-11,798 mg kg -1 ), and all soils, including those taken from a paddy field and a vegetable garden, show a high bioavailable Sb fraction (6.3-748 mg kg -1 ), dominated by Sb(V). Elevated concentrations in native plant species (109-4029 mg kg -1 ) underpin this. Both chemical equilibrium studies and XANES data suggest the presence of Ca[Sb(OH) 6 ] 2 , controlling Sb solubility. A very close relationship was found between the citric acid extractable Sb in plants and water or sulfate extractable Sb in soil, indicating that citric acid extractable Sb content in plants may be a better predictor for bioavailable Sb in soil than total acid digestible Sb plant content. - Highlights: → Antimony (Sb) in soils from an active Sb mining area is highly bioavailable. → Sb occurs mainly as Sb(V) in Sb mining impacted soils and plants. → Sb solubility in Sb mining impacted soils is governed by Ca[Sb(OH) 6 ] 2 . → Citric acid extractable Sb in plants and bioavailable Sb in soils are strongly correlated. - Antimony (Sb) in soils from an active Sb mining area is highly bioavailable and controlled by the solubility of calcium antimonate.

  10. Changes of electronic structure of SnTe due to high concentration of Sn vacancies

    International Nuclear Information System (INIS)

    Masek, J.; Nuzhnyj, D.N.

    1997-01-01

    Non-stoichiometric Sn 1-y Te is a strongly degenerated n-type semiconductor. This is important for understanding unusual features of magnetic behaviour of Sn 1-x Gd x Te where the relative positions of the Fermi energy and the atomic d-level of Gd govern the exchange coupling.The influence of the Sn vacancies on the band structure cannot be neglect if their concentration reaches a few atomic percent. We address this problem by using a tight-binding coherent potential approach and show that although the character of the bands remains unchanged, they are modified so that ε d can come out above the heavy-hole band. (author)

  11. Determination of heavy metals in chinese prickly ash from different ...

    African Journals Online (AJOL)

    Methods: CPA samples collected from different production areas in China were subjected to microwave digestion, and the contents of copper (Cu), nickel (Ni), chromium (Cr), lead (Pb), cadmium (Cd), arsenic (As), mercury (Hg), tin (Sn), and antimony (Sb) were determined by inductively coupled plasma-mass spectrometry ...

  12. Heavy metal and radioactivity measurements in fish, water, plants and soils in tin-mining pool

    International Nuclear Information System (INIS)

    Muhammad Samudi Yasir; Norlaili Ahmad Kabir; Redzuwan Yahaya; Amran Abdul Majid

    2008-01-01

    Malaysia aggressively reclaimed most of their disused tin-mining pool especially for agricultural activities, freshwater fish farming area, recreational area, houses area and even as an industrial area. Past mining activities might induced the concentration of naturally occurring radionuclide (NORM) and heavy metal at the disused tin-mining pool ecosystem. A study has been conducted on the status of heavy metal (Hf, Zr, Mn, Cu, Zn, As, Cd, Sn, Sb, Ba, Hg and Pb) concentration and naturally occurring radionuclide activity in fish, water, plants and sediments at three different disused tin-mining pool near by Sepang and Puchong, Selangor Darul Ehsan. Sample of fish, water, plant and sediment being analyze using ICP-MS. The concentrations of heavy metal in sediment and plant are higher than its concentrations in fish and followed by water. The highest concentration of heavy metal in sediment and water is barium, whereas the highest concentration of heavy metal in fish and plant is zinc and manganese. The result also showed that only mercury level in fish collected in second disused tin-mining pool (0.53 ± 0.20 mg/ kg) is exceed the maximum limit (0.5 mg/ kg) prescribe by the Malaysian Food Act (Act 281). The activity of U-238 and Th-232 in sediment was found to be relatively higher than its activity in fish, plant or water (30.76 ± 2.71 to 35.34 ± 0.27 Bq/ kg) and (9.37 ± 2.30 - 18.86 ± 2.60 Bq/ kg). The determination of K-40 activity showed that it is highly contained in plant and fish than in sediment or water. (author)

  13. Bonding in ZnSb

    DEFF Research Database (Denmark)

    Bjerg, Lasse; Madsen, Georg K. H.; Iversen, Bo Brummerstedt

    Thermoelectric materials are capable of converting waste heat into usable electric energy. The conversion efficiency depends critically on the electronic band structure. Theoretical calculations predict the semiconducting ZnSb to have a promising efficiency if it is n-doped. The details of the lo......Thermoelectric materials are capable of converting waste heat into usable electric energy. The conversion efficiency depends critically on the electronic band structure. Theoretical calculations predict the semiconducting ZnSb to have a promising efficiency if it is n-doped. The details...... of the lowest conduction band have therefore been investigated. Electrons placed in the lowest conduction band are predicted to increase the bonding between second nearest neighbour atoms. This causes a lowering of the energy at special points in the first Brillouin zone. Thereby, the dispersion of the lowest...

  14. Interfacial reactions in the Sb–Sn/(Cu, Ni) systems: Wetting experiments

    International Nuclear Information System (INIS)

    Novakovic, R.; Lanata, T.; Delsante, S.; Borzone, G.

    2012-01-01

    Interfacial reactions in the Sb–Sn/Cu and Sb–Sn/Ni systems have been investigated by means of wetting experiments. The wetting behaviour of two lead-free alloys, namely, Sb 2.5 Sn 97.5 and Sb 14.5 Sn 85.5 (at.%), in contact with Cu and Ni-substrates has been studied in view of possible applications as high-temperature solders in the electronics industry. The contact angle measurements on Cu and Ni plates were performed by using a sessile drop apparatus. The solder/substrate interface was characterised by the SEM-EDS analyses. -- Highlights: ► Sb–Sn alloys are used as high temperature lead-free solders. ► Sb–Sn alloys have good wetting properties on Cu and Ni substrates. ► Interfacial reactions and products are important for joint properties. ► Interfacial reactions/products data can be used to study the phase diagrams.

  15. Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

    OpenAIRE

    Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, Juan Pedro; Briones Fernández-Pola, Fernando

    2001-01-01

    Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusio...

  16. Gamma spectroscopy of multiple nucleon transfer reactions in Sn

    International Nuclear Information System (INIS)

    Grabowski, Z.W.; Mayer, R.H.; Fornal, B.; Nisius, D.T.; Bearden, I.G.; Daly, P.J.; Broda, R.; Carpenter, M.P.; Janssens, R.V.F.; Khoo, T.L.; Lauritsen, T.

    1992-01-01

    The decay of (πh 11/2 ) n yrast isomers was studied in a series of proton-rich N = 82 isotones culminating in determination of B(E2) values in 153 Lu and 154 Hf. In the N = 82 isotones however, it seems unlikely that the measurements could be extended beyond 154 Hf (n = 8). The opportunity to investigate the (h 11/2 ) n ) isomers across the whole h 11/2 subshell exists, at least in principle, in Sn isotopes where the counterpart νh 11/2 subshell is being filled with neutrons starting at 116 Sn. Before our measurements were initiated, the (νh 11/2 ) n 10 + isomers were known to exist in 116, 118, 120 Sn, where the νh 11/2 subshell begins to fill, and in 128,130 Sn at the other end. Important information, however, was missing about the 10 + isomers in 122,124,126 Sn where the long lifetimes are expected. The υ = 3 (h 11/2 ) isomers in odd tin isomers for A ≥ 119 were also not identified. A serious experimental difficulty in populating high spin states in heavier Sn isotopes is that they are not accessible by fusion-evaporation reactions. We decided to search for these missing tin isotopes among the products of heavy ion reactions on 122,124 Sn targets. Using this approach we were able to identify the isomeric decays and measure the lifetimes of the (νh 11/2 n ) υ = 2 isomeric states in 122,124 Sn. In odd tin isotopes we identified new I = 19/2 + yrast isomers in 119,121,123 Sn and measured their lifetimes. In addition (νh 11/2 ) n υ = 3, I = 27/2 - isomers in 119,121 Sn were observed for the first time

  17. Whisker and Hillock formation on Sn, Sn-Cu and Sn-Pb electrodeposits

    International Nuclear Information System (INIS)

    Boettinger, W.J.; Johnson, C.E.; Bendersky, L.A.; Moon, K.-W.; Williams, M.E.; Stafford, G.R.

    2005-01-01

    High purity bright Sn, Sn-Cu and Sn-Pb layers, 3, 7 and 16 μm thick were electrodeposited on phosphor bronze cantilever beams in a rotating disk apparatus. Beam deflection measurements within 15 min of plating proved that all electrodeposits had in-plane compressive stress. In several days, the surfaces of the Sn-Cu deposits, which have the highest compressive stress, develop 50 μm contorted hillocks and 200 μm whiskers, pure Sn deposits develop 20 μm compact conical hillocks, and Sn-Pb deposits, which have the lowest compressive stress, remain unchanged. The differences between the initial compressive stresses for each alloy and pure Sn is due to the rapid precipitation of Cu 6 Sn 5 or Pb particles, respectively, within supersaturated Sn grains produced by electrodeposition. Over longer time, analysis of beam deflection measurements indicates that the compressive stress is augmented by the formation of Cu 6 Sn 5 on the bronze/Sn interface, while creep of the electrodeposit tends to decrease the compressive stress. Uniform creep occurs for Sn-Pb because it has an equi-axed grain structure. Localized creep in the form of hillocks and whiskers occurs for Sn and Sn-Cu because both have columnar structures. Compact hillocks form for the Sn deposits because the columnar grain boundaries are mobile. Contorted hillocks and whiskers form for the Sn-Cu deposits because the columnar grain boundary motion is impeded

  18. Nucleon transfer between heavy nuclei

    International Nuclear Information System (INIS)

    Von Oertzen, W.

    1984-02-01

    Nucleon transfer reactions between heavy nuclei are characterized by the classical behaviour of the scattering orbits. Thus semiclassical concepts are well suited for the description of these reactions. In the present contribution the characteristics of single and multinucleon transfer reactions at energies below and above the Coulomb barrier are shown for systems like Sn+Sn, Xe+U and Ni+Pb. The role of the pairing interaction in the transfer of nucleon pairs is illustrated. For strong transitions the coupling of channels and the absorption into more complicated channels is taken into account in a coupled channels calculation

  19. Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures

    Science.gov (United States)

    Bracht, H.; Nicols, S. P.; Haller, E. E.; Silveira, J. P.; Briones, F.

    2001-05-01

    Gallium and antimony self-diffusion experiments have been performed in undoped 69Ga121Sb/71Ga123Sb isotope heterostructures at temperatures between 571 and 708 °C under Sb- and Ga-rich ambients. Ga and Sb profiles measured with secondary ion mass spectrometry reveal that Ga diffuses faster than Sb by several orders of magnitude. This strongly suggests that the two self-atom species diffuse independently on their own sublattices. Experimental results lead us to conclude that Ga and Sb diffusion are mediated by Ga vacancies and Sb interstitials, respectively, and not by the formation of a triple defect proposed earlier by Weiler and Mehrer [Philos. Mag. A 49, 309 (1984)]. The extremely slow diffusion of Sb up to the melting temperature of GaSb is proposed to be a consequence of amphoteric transformations between native point defects which suppress the formation of those native defects which control Sb diffusion. Preliminary experiments exploring the effect of Zn indiffusion at 550 °C on Ga and Sb diffusion reveal an enhanced intermixing of the Ga isotope layers compared to undoped GaSb. However, under the same conditions the diffusion of Sb was not significantly affected.

  20. Heavy leptons

    International Nuclear Information System (INIS)

    Smith, C.H.L.

    1977-01-01

    The possibility that a new lepton may exist is discussed under the headings; theoretical reasons for the introduction of heavy leptons, classification of heavy leptons (ortho and paraleptons), discrimination between different types of lepton, decays of charged heavy leptons, production of charged heavy leptons (in e + e - storage rings, neutrino production, photoproduction, and hadroproduction), neutral heavy leptons, and hadroleptons. (U.K.)

  1. Sequential and simultaneous adsorption of Sb(III) and Sb(V) on ferrihydrite: Implications for oxidation and competition.

    Science.gov (United States)

    Qi, Pengfei; Pichler, Thomas

    2016-02-01

    Antimony (Sb) is a naturally occurring element of growing environmental concern whose toxicity, adsorption behavior and other chemical properties are similar to that of arsenic (As). However, less is known about Sb compared to As. Individual and simultaneous adsorption experiments with Sb(III) and Sb(V) were conducted in batch mode with focus on the Sb speciation of the remaining liquid phase during individual Sb(III) adsorption experiments. The simultaneous adsorption and oxidation of Sb(III) was confirmed by the appearance of Sb(V) in the solution at varying Fe/Sb ratios (500, 100 and 8) and varying pH values (3.8, 7 and 9). This newly formed Sb(V) was subsequently removed from solution at a Fe/Sb ratio of 500 or at a pH of 3.8. However, more or less only Sb(V) was observed in the liquid phase at the end of the experiments at lower Fe/Sb ratios and higher pH, indicating that competition took place between the newly formed Sb(V) and Sb(III), and that Sb(III) outcompeted Sb(V). This was independently confirmed by simultaneous adsorption experiments of Sb(III) and Sb(V) in binary systems. Under such conditions, the presence of Sb(V) had no influence on the adsorption of Sb(III) while Sb(V) adsorption was significantly inhibited by Sb(III) over a wide pH range (4-10). Thus, in the presence of ferrihydrite and under redox conditions, which allow the presence of both Sb species, Sb(V) should be the dominant species in aquatic environments, since Sb(III) is adsorbed preferentially and at the same time oxidized to Sb(V). Copyright © 2015 Elsevier Ltd. All rights reserved.

  2. Properties and Microstructures of Sn-Ag-Cu-X Lead-Free Solder Joints in Electronic Packaging

    OpenAIRE

    Sun, Lei; Zhang, Liang

    2015-01-01

    SnAgCu solder alloys were considered as one of the most popular lead-free solders because of its good reliability and mechanical properties. However, there are also many problems that need to be solved for the SnAgCu solders, such as high melting point and poor wettability. In order to overcome these shortcomings, and further enhance the properties of SnAgCu solders, many researchers choose to add a series of alloying elements (In, Ti, Fe, Zn, Bi, Ni, Sb, Ga, Al, and rare earth) and nanoparti...

  3. [Determination of Heavy Metal Elements in Diatomite Filter Aid by Inductively Coupled Plasma Mass Spectrometry].

    Science.gov (United States)

    Nie, Xi-du; Fu, Liang

    2015-11-01

    This study established a method for determining Be, Cr, Ni, As, Cd, Sb, Sn, Tl, Hg and Pb, total 10 heavy metals in diatomite filter aid. The diatomite filter aid was digested by using the mixture acid of HNO₃ + HF+ H₃PO₄ in microwave system, 10 heavy metals elements were determined by inductively coupled plasma mass spectrometry (ICP-MS). The interferences of mass spectrometry caused by the high silicon substrate were optimized, first the equipment parameters and isotopes of test metals were selected to eliminate these interferences, the methane was selected as reactant gas, and the mass spectral interferences were eliminated by dynamic reaction cell (DRC). Li, Sc, Y, In and Bi were selected as the internal standard elements to correct the interferences caused by matrix and the drift of sensitivity. The results show that the detection limits for analyte is in the range of 3.29-15.68 ng · L⁻¹, relative standard deviations (RSD) is less than 4.62%, and the recovery is in the range of 90.71%-107.22%. The current method has some advantages such as, high sensitivity, accurate, and precision, which can be used in diatomite filter aid quality control and safety estimations.

  4. Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure

    International Nuclear Information System (INIS)

    Arpapay, B.; Şahin, S.; Arıkan, B.; Serincan, U.

    2014-01-01

    The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different Sb beam equivalent pressure (BEP) levels and two different termination temperatures. Surface morphologies of epilayers were examined by wet etching, surface profiler, atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The results demonstrate that during the cooling period, a Sb BEP of 4.00 × 10 −4 Pa at a termination temperature of 400 °C induces a smooth surface without Sb condensation whereas same Sb BEP at a termination temperature of 350 °C forms a 300 nm thick Sb layer on the surface. In addition, it is revealed that by applying a wet etching procedure and using a surface profiler it is possible to identify this condensed layer from the two-sloped feature of mesa profile. - Highlights: • Sb beam flux termination temperature is crucial for redundant Sb condensation. • Sb beam flux level has a role on the thickness of redundant condensed Sb layer. • Redundant Sb layer thickness can be measured by two-sloped mesa structure

  5. Odd-odd neutron-excess nuclei from the magicity region close to 132Sn

    International Nuclear Information System (INIS)

    Erokhina, K.I.; Isakov, V.I.

    1994-01-01

    This is the second publication in a series devoted to theoretical study of neutron-excess nuclei close to the doubly magic nuclide 132 Sn. Odd-odd nuclei from this region are considered by using the quasi-boson approximation. Energy level spectra, electromagnetic transition probabilities, and β-decay properties of nuclei are analyzed. Among other things, the renormalization of the axial-vector constant in the nucleus is determined. Numerical calculations are made for 134 Sb, 130 In, 132 Sb, and 132 In nuclides. Whenever possible, the results are compared with experimental data. 33 refs., 11 figs., 1 tab

  6. Preparation and near-infrared absorption of nano-SnO{sub 2}/SiO{sub 2} assemblies with doping and without doping

    Energy Technology Data Exchange (ETDEWEB)

    Hai Shujie [Faculty of Material Science and Chemical Engineering, China University of Geosciences, Lu Mo Road 388, Wuhan 430074 (China); Yan Chunjie, E-mail: chjyan2005@126.co [Engineering Research Center of Nano-Geomaterials, Ministry of Education, China University of Geosciences, Lu Mo Road 388, Wuhan 430074 (China); Yu Hongjie; Xiao Guoqi; Wang Duo [Faculty of Material Science and Chemical Engineering, China University of Geosciences, Lu Mo Road 388, Wuhan 430074 (China)

    2009-11-20

    The assemblies of nano-SnO{sub 2}/SiO{sub 2} and Sb- or Pd-doped nano-SnO{sub 2}/SiO{sub 2}, in which the nano-SnO{sub 2} particles are located in the pores of mesoporous SiO{sub 2} dry gels, were synthesized. Only for the Sb-doped nano-SnO{sub 2}/SiO{sub 2} assemblies, a broad near-infrared absorption step occurs in the optical absorption spectrum of the wavelength range from 300 to 1500 nm. The near-infrared absorption phenomenon is attributed to electronic transitions from the ground states to the excitation states of the impurity energy levels, which are formed by Sb doping in SnO{sub 2}. With increasing the weight ratio of SnO{sub 2}:SiO{sub 2} or the annealing temperature, the near-infrared absorption step slope side exhibits 'red shift', which is caused by the quantum confinement effect weakening due to the increased SnO{sub 2} crystalline diameter.

  7. The Structural Changes of the Sn(y)OX Thin Films Under Influence of Heat Treament

    Science.gov (United States)

    Vong, V.

    2001-04-01

    Composite oxide Sn(y) Ox made by thermal oxidation of the Sn(y)-bimetal thin films, in which y is the doped-materials as well as Sb, Ag or Pd. The Sn(y)-bimetal thin films have been made by evaporation in high vacuum onto NaCl-monocrystall and optical glass substrates. In the work the tin and the doped material (y) were put on two different boats and then both the boats were simultaniously heated to evaporate. The Sn(y)Ox thin films were annealed at the differential temperatures. The structural changes of its have been investigated by using X-ray diffraction and transmission electron microscope.

  8. SN 2009E

    DEFF Research Database (Denmark)

    Pastorello...[], A.; Pumo, M.L.; Navasardyan, H.

    2012-01-01

    . In this paper we investigate the properties of SN 2009E, which exploded in a relatively nearby spiral galaxy (NGC 4141) and that is probably the faintest 1987A-like supernova discovered so far. We also attempt to characterize this subgroup of core-collapse supernovae with the help of the literature and present...... observations which started about 2 months after the supernova explosion, highlight significant differences between SN 2009E and the prototypical SN 1987A. Modelling the data of SN 2009E allows us to constrain the explosion parameters and the properties of the progenitor star, and compare the inferred estimates...... 2009E ejected about 0.04 M⊙ of 56Ni, which is the smallest 56Ni mass in our sample of 1987A-like events. Modelling the observations with a radiation hydrodynamics code, we infer for SN 2009E a kinetic plus thermal energy of about 0.6 foe, an initial radius of ~7 × 1012 cm and an ejected mass of ~19 M...

  9. Properties and Microstructures of Sn-Ag-Cu-X Lead-Free Solder Joints in Electronic Packaging

    Directory of Open Access Journals (Sweden)

    Lei Sun

    2015-01-01

    Full Text Available SnAgCu solder alloys were considered as one of the most popular lead-free solders because of its good reliability and mechanical properties. However, there are also many problems that need to be solved for the SnAgCu solders, such as high melting point and poor wettability. In order to overcome these shortcomings, and further enhance the properties of SnAgCu solders, many researchers choose to add a series of alloying elements (In, Ti, Fe, Zn, Bi, Ni, Sb, Ga, Al, and rare earth and nanoparticles to the SnAgCu solders. In this paper, the work of SnAgCu lead-free solders containing alloying elements and nanoparticles was reviewed, and the effects of alloying elements and nanoparticles on the melting temperature, wettability, mechanical properties, hardness properties, microstructures, intermetallic compounds, and whiskers were discussed.

  10. Zr3NiSb7: a new antimony-enriched ZrSb2 derivative

    Directory of Open Access Journals (Sweden)

    V. Romaka

    2008-08-01

    Full Text Available Single crystals of trizirconium nickel heptaantimonide were synthesized from the constituent elements by arc-melting. The compound crystallizes in a unique structure type and belongs to the family of two-layer structures. All crystallographically unique atoms (3 × Zr, 1 × Ni and 7 × Sb are located at sites with m symmetry. The structure contains `Zr2Ni2Sb5' and `Zr4Sb9' fragments and might be described as a new ZrSb2 derivative with a high Sb content.

  11. Density functional simulations of Sb-rich GeSbTe phase change alloys

    OpenAIRE

    Gabardi, S; Caravati, S; Bernasconi, M; Parrinello, M

    2012-01-01

    We generated models of the amorphous phase of Sb rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1Sb 1Te 1 and Ge 2Sb 4Te 5. Comparison with previous results on the most studied Ge 2Sb 2Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high fr...

  12. Dissimilatory Sb(V) reduction by microorganisms isolated from Sb-contaminated sediment

    Science.gov (United States)

    Dovick, M. A.; Kulp, T. R.

    2013-12-01

    Mining and smelting are major sources of trace metal contamination in freshwater systems. Arsenic (As) is a common contaminant derived from certain mining operations and is a known toxic metalloid and carcinogen. Antimony (Sb) is listed as a pollutant of priority interest by the EPA and is presumed to share similar geochemical and toxicological properties with arsenic. Both elements can occur in four different oxidation states (V, III, 0, and -III) under naturally occurring conditions. In aqueous solutions As(V) and Sb(V) predominate in oxygenated surface waters whereas As(III) and Sb(III) are stable in anoxic settings. Numerous studies have examined microbiological redox pathways that utilize As(V) as a terminal electron acceptor for anaerobic respiration, however there have been few studies on microbial mechanisms that may affect the biogeochemical cycling of Sb in the environment. Here we report bacterial reduction of Sb(V) to Sb(III) in anoxic enrichment cultures and bacterial isolates grown from sediment collected from an Sb contaminated pond at a mine tailings site in Idaho (total pond water Sb concentration = 235.2 +/- 136.3 ug/L). Anaerobic sediment microcosms (40 mL) were established in artificial freshwater mineral salt medium, amended with millimolar concentrations of Sb(V), acetate or lactate, and incubated at 27°C for several days. Antimony(V), lactate, and acetate concentrations were monitored during incubation by High Performance Liquid Chromatography (HPLC) and Ion Chromatography (IC). Live sediment microcosms reduced millimolar amendments of Sb(V) to Sb(III) coupled to the oxidation of acetate and lactate, while no activity occurred in killed controls. Enrichment cultures were established by serially diluting Sb(V)-reducing microcosms in mineral salt medium with Sb(V) and acetate, and a Sb(V)-reducing bacterial strain was isolated by plating on anaerobic agar plates amended with millimolar Sb(V) and acetate. Direct cell counting demonstrated that

  13. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Energy Technology Data Exchange (ETDEWEB)

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716 (United States); Adam, Thomas [College of Nanoscale Science and Engineering, SUNY, Albany, New York 12203 (United States); Kim, Yihwan; Huang, Yi-Chiau [Applied Materials, Sunnyvale, California 94085 (United States); Reznicek, Alexander [IBM Research at Albany Nanotech, Albany, New York 12203 (United States)

    2016-03-07

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl{sub 4} precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  14. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander

    2016-01-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl 4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  15. New superconductor LaRhSb

    International Nuclear Information System (INIS)

    Nishigori, S.; Moriwaki, H.; Suzuki, T.; Fujita, T.; Tanaka, H.; Takabatake, T.; Fujii, H.

    1994-01-01

    Superconductivity in LaRhSb was newly found below the transition temperature T c = 2.67 K by the measurements of the electrical resistivity, magnetic susceptibility and specific heat in magnetic fields. The characteristics of the superconductivity determined in this study indicate that LaRhSb is a type II superconductor following the BCS theory. (orig.)

  16. Heavy ions: Report from Relativistic Heavy Ion Collider

    Indian Academy of Sciences (India)

    2012-10-12

    Oct 12, 2012 ... Experiments using ultrarelativistic heavy-ion collisions study nuclear matter under ... sN N = 10 GeV for Pb+Pb collisions, corresponding to an initial .... quenching through systematic comparisons of data to models, and .... the RdAu and RCP = (0−20%)/(60−80%) factors for the J/ψ production in d+Au col-.

  17. Density functional simulations of Sb-rich GeSbTe phase change alloys

    International Nuclear Information System (INIS)

    Gabardi, S; Bernasconi, M; Caravati, S; Parrinello, M

    2012-01-01

    We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge 1 Sb 1 Te 1 and Ge 2 Sb 4 Te 5 . Comparison with previous results on the most studied Ge 2 Sb 2 Te 5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm -1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge 2 Sb 2 Te 5 . All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

  18. Density functional simulations of Sb-rich GeSbTe phase change alloys

    Science.gov (United States)

    Gabardi, S.; Caravati, S.; Bernasconi, M.; Parrinello, M.

    2012-09-01

    We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge1Sb1Te1 and Ge2Sb4Te5. Comparison with previous results on the most studied Ge2Sb2Te5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm-1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge2Sb2Te5. All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

  19. Individual SnO2 nanowire transistors fabricated by the gold microwire mask method

    International Nuclear Information System (INIS)

    Sun Jia; Tang Qingxin; Lu Aixia; Jiang Xuejiao; Wan Qing

    2009-01-01

    A gold microwire mask method is developed for the fabrication of transistors based on single lightly Sb-doped SnO 2 nanowires. Damage of the nanowire's surface can be avoided without any thermal annealing and surface modification, which is very convenient for the fundamental electrical and photoelectric characterization of one-dimensional inorganic nanomaterials. Transport measurements of the individual SnO 2 nanowire devices demonstrate the high-performance n-type field effect transistor characteristics without significant hysteresis in the transfer curves. The current on/off ratio and the subthreshold swing of the nanowire transistors are found to be 10 6 and 240 mV/decade, respectively.

  20. High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

    International Nuclear Information System (INIS)

    Wu, B.-R.; Liao, C.; Cheng, K. Y.

    2008-01-01

    High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

  1. High figure of merit and thermoelectric properties of Bi-doped Mg2Si0.4Sn0.6 solid solutions

    International Nuclear Information System (INIS)

    Liu, Wei; Zhang, Qiang; Yin, Kang; Chi, Hang; Zhou, Xiaoyuan; Tang, Xinfeng; Uher, Ctirad

    2013-01-01

    The study of Mg 2 Si 1−x Sn x -based thermoelectric materials has received widespread attention due to a potentially high thermoelectric performance, abundant raw materials, relatively low cost of modules, and non-toxic character of compounds. In this research, Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y solid solutions with the nominal Bi content of 0≤y≤0.03 are prepared using a two-step solid state reaction followed by spark plasma sintering consolidation. Within this range of Bi concentrations, no evidence of second phase segregation was found. Bi is confirmed to occupy the Si/Sn sites in the crystal lattice and behaves as an efficient n-type dopant in Mg 2 Si 0.4 Sn 0.6 . Similar to the effect of Sb, Bi doping greatly increases the electron density and the power factor, and reduces the lattice thermal conductivity of Mg 2.16 Si 0.4 Sn 0.6 solid solutions. Overall, the thermoelectric figure of merit of Bi-doped Mg 2.16 Si 0.4 Sn 0.6 solid solutions is improved by about 10% in comparison to values obtained with Sb-doped materials of comparable dopant content. This improvement comes chiefly from a marginally higher Seebeck coefficient of Bi-doped solid solutions. The highest ZT∼1.4 is achieved for the y=0.03 composition at 800 K. - Graphical abstract: (a)The relationship between electrical conductivity and power factor for Sb/Bi-doped Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y (Sb/Bi) y (0 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y (0≤y≤0.03) solid solutions. (c)Temperature dependent dimensionless figure of merit ZT of Mg 2.16 (Si 0.4 Sn 0.6 ) 1−y Bi y (0≤y≤0.03) solid solutions. - Highlights: • Bi doped Mg 2.16 Si 0.4 Sn 0.6 showed 15% enhancement in the power factor as compared to Sb doped samples. • Bi doping reduced κ ph of Mg 2.16 Si 0.4 Sn 0.6 due to stronger point defect scattering. • The highest ZT=1.4 at 800 K was achieved for Mg 2.16 (Si 0.4 Sn 0.6 ) 0.97 Bi 0.03

  2. Negative heat capacities in central Xe+Sn reactions

    International Nuclear Information System (INIS)

    Le Neindre, N.; Bougault, R.; Gulminelli, F.

    2000-02-01

    In this study the fluctuation method is applied to the 32-50 A.MeV Xe + Sn central collisions detected with the INDRA multidetector. This method based on kinetic energy fluctuations allows the authors to provide information on the liquid gas phase transition in nuclear multifragmentation. In the case of Xe + Sn central reactions a divergence in the total heat capacity is observed. This divergence corresponds to large fluctuations on the detected fragment partitions. A negative heat capacity branch is measured and so tends to confirm the observation of a first order phase transition in heavy-ion collisions. (A.C.)

  3. SN 2012fr

    DEFF Research Database (Denmark)

    Contreras, Carlos; Phillips, M. M.; Burns, Christopher R.

    2018-01-01

    We present detailed ultraviolet, optical, and near-infrared light curves of the Type Ia supernova (SN) 2012fr, which exploded in the Fornax cluster member NGC 1365. These precise high-cadence light curves provide a dense coverage of the flux evolution from -12 to +140 days with respect to the epo...

  4. Crystallographic study of the intermediate compounds SbZn, Sb3Zn4 and Sb2Zn3

    International Nuclear Information System (INIS)

    Adjadj, Fouzia; Belbacha, El-djemai; Bouharkat, Malek; Kerboub, Abdellah

    2006-01-01

    The processes of development of semiconductor ceramics made up of bismuth, antimony and zinc often require during their preparation to know the nature of the involved phases. For that, it is always essential to refer to the diagrams of balance between phases of the binary systems or ternary. We presented in this work the study by X-rays diffraction relating to the intermediate compounds SbZn, Sb 3 Zn 4 and Sb 2 Zn 3 . The analysis by X-rays is often useful to give supplement the results of the other experimental methods

  5. Ultra Fast Timing Measurements at $^{78}$Ni and $^{132}$Sn

    CERN Multimedia

    2002-01-01

    We propose to measure level lifetimes in the exotic nuclei of $^{81}$Ga and $^{80}$Ga in the vicinity of $^{78}$Ni and of $^{135}$Sb and $^{134}$Sb above $^{132}$Sn by the time-delayed technique. These are relatively simple nuclear systems with a few particles and/or holes outside of the doubly-magic core thus can be treated rather precisely within the shell model. The anticipated new structure information on these nuclei, and in particular the lifetime results will put constraints on the model parameters and will serve to verify their predictions. The selected nuclei are some of the most exotic ones just above $^{78}$Ni or $^{132}$Sn, where the transition rates can be studied at present. Of the strongest interest is the nucleus of $^{81}$Ga, which has only 3 valence protons outside of $^{78}$Ni with the lowest proton orbits being $p_{3/2}$ and $f_{5/2}$. The Ml transition between these states, although allowed by the selection rules, should be $\\textit{l}$-forbidden thus very slow. This should give rise to a...

  6. Adsorption pertechnetate ions on the substituted Sn-hydroxyapatite

    International Nuclear Information System (INIS)

    Hamarova, A.; Rosskopfova, O.; Pivarciova, L.

    2015-01-01

    Hydroxyapatite is suitable adsorbent for heavy metals and radionuclides due to its large surface area, high stability under redox conditions. SnCl 2 for its reducing properties is used in biomedical applications and industrial technologies, for its reducing properties. The adsorption of TcO 4 - to the HA samples, prepared by wet precipitation method, was studied by the d radio-indication method. Radionuclide 99m Tc was used as radioisotope indicator. The effect of contact time on the adsorption of 99m TcO 4 - ions on the Sn-HA was studied. Sn 2+ ions reduced Tc (VII) to Tc (IV) forming TcO 2 , TcO(OH) 2 or more precisely TcO 2 ·2H 2 O, which can be adsorbed on the surface of the HA, or to form complexes on the surface of the hydroxyapatite. (authors)

  7. Pseudopotential calculations of AlSb under pressure

    Science.gov (United States)

    Algarni, H.; Al-Hagan, O. A.; Bouarissa, N.; Khan, M. A.; Alhuwaymel, T. F.

    2018-02-01

    The dependence on hydrostatic pressure of the electronic and optical properties of zinc-blende AlSb semiconducting material in the pressure range of 0-20 kbar has been reported using a pseudopotential approach. At zero pressure, our findings showed that the electron and heavy hole effective masses are 0.11 and 0.38 m0, respectively. Moreover, our results yielded values of 3.3289 and 11.08 for refractive index and high frequency dielectric constant, respectively. These results are found to be in good accord with experiment. Upon compression, all physical parameters of interest showed a monotonic behavior. The pressure-induced energy shifts for the optical transition related to band-gaps indicated that AlSb remains an indirect (D-X) band-gap semiconductor at pressures from 0 to 20 kbar. The trend in all features of interest versus pressure has been presented and discussed. It is found that the lattice parameter is reduced from 0.61355 to 0.60705 nm when pressure is raised from 0 to 20 kbar. The present investigation may be useful for mid-infrared lasers applications, detectors and communication devices.

  8. State-of-the-art Sn2+-based ternary oxides as photocatalysts for water splitting: electronic structures and optoelectronic properties

    KAUST Repository

    Noureldine, Dalal

    2016-09-19

    Developing visible light responsive metal oxide photocatalysts is a challenge that must be conquered to achieve high efficiency for water splitting or hydrogen evolution reactions. Valence band engineering is possible by forming ternary oxides using the combination of a metal cation with an s2d10 electronic configuration and a transition metal oxide with a d0 configuration. Many (Sn2+, Bi3+, Pb2+)-based ternary metal oxide photocatalysts have been reported for hydrogen and/or oxygen evolution under visible irradiation. Sn2+-based materials have attracted particular attention because tin is inexpensive, abundant and more environmentally friendly than lead or bismuth. In this review, we provide a fruitful library for Sn2+-based photocatalysts that have been reported to evolve hydrogen using sacrificial reagents, including SnNb2O6, Sn2Nb2O7, SnTaxNb2−xO6, SnTa2O6, Sn2Ta2O7, SnWO4 (α and β phases), SnSb2O6·nH2O, and Sn2TiO4. The synthesis method used in the literature and the resultant morphology and crystal structure of each compound are discussed. The density functional theory (DFT) calculations of the electronic structure and density of states are provided, and the consequent optoelectronic properties such as band gap, nature of the bandgap, dielectric constant, and effective masses are summarized. This review will help highlight the main challenges for Sn2+-based materials.

  9. State-of-the-art Sn2+-based ternary oxides as photocatalysts for water splitting: electronic structures and optoelectronic properties

    KAUST Repository

    Noureldine, Dalal; Takanabe, Kazuhiro

    2016-01-01

    Developing visible light responsive metal oxide photocatalysts is a challenge that must be conquered to achieve high efficiency for water splitting or hydrogen evolution reactions. Valence band engineering is possible by forming ternary oxides using the combination of a metal cation with an s2d10 electronic configuration and a transition metal oxide with a d0 configuration. Many (Sn2+, Bi3+, Pb2+)-based ternary metal oxide photocatalysts have been reported for hydrogen and/or oxygen evolution under visible irradiation. Sn2+-based materials have attracted particular attention because tin is inexpensive, abundant and more environmentally friendly than lead or bismuth. In this review, we provide a fruitful library for Sn2+-based photocatalysts that have been reported to evolve hydrogen using sacrificial reagents, including SnNb2O6, Sn2Nb2O7, SnTaxNb2−xO6, SnTa2O6, Sn2Ta2O7, SnWO4 (α and β phases), SnSb2O6·nH2O, and Sn2TiO4. The synthesis method used in the literature and the resultant morphology and crystal structure of each compound are discussed. The density functional theory (DFT) calculations of the electronic structure and density of states are provided, and the consequent optoelectronic properties such as band gap, nature of the bandgap, dielectric constant, and effective masses are summarized. This review will help highlight the main challenges for Sn2+-based materials.

  10. Thermodynamic stability studies of Ce-Sb compounds with Fe

    Science.gov (United States)

    Xie, Yi; Zhang, Jinsuo; Benson, Michael T.; Mariani, Robert D.

    2018-02-01

    Lanthanide fission products can migrate to the fuel periphery and react with cladding, causing fuel-cladding chemical interaction (FCCI). Adding a fuel additive dopant, such as Sb, can bind lanthanide, such as Ce, into metallic compounds and thus prevent migration. The present study focuses on the thermodynamic stability of Ce-Sb compounds when in contact with the major cladding constituent Fe by conducting diffusion couple tests. Ce-Sb compounds have shown high thermodynamic stability as they did not react with Fe. When Fe-Sb compounds contacted with Ce, Sb was separated out of Fe-Sb compounds and formed the more stable Ce-Sb compounds.

  11. SN 1987A. Theory

    International Nuclear Information System (INIS)

    Schaeffer, R.

    1987-03-01

    SN 1987A was unique in many aspects. The most striking, undoubtedly, is its low luminosity, nearly two orders of magnitude below the expectations based on supernovae currently observed in external galaxies. The rise time of the optical emission, usually a few days, was for SN 1987A, of the order of a few hours. Also its surface temperature is surprisingly low, 5000K. The neutrino burst has been detected. It was observed twice, with a time difference of 5 hours, the second burst occurring within 3 hours of the onset of the optical signal. In this talk, I will discuss how these strange events fit with the theoretical models of supernova explosions, how they differ in some cases, and try to evaluate the degree of certainty -or uncertainty- of our present knowledge on how these extremely powerful star explosions occur

  12. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  13. Structural and Electronic Features of Sb-Based Electrode Materials: 121Sb Moessbauer Spectrometry

    International Nuclear Information System (INIS)

    Ionica, C. M.; Aldon, L.; Lippens, P. E.; Morato, F.; Olivier-Fourcade, J.; Jumas, J.-C.

    2004-01-01

    Lithium insertion mechanisms in two antimony based compounds: CoSb 3 and CoSb have been studied by means of 121 Sb Moessbauer spectrometry. Structural and electronic modifications induced by insertion of lithium have been characterised for different depths of discharge. In all cases the insertion mechanisms can be described from several steps. In the first step antimony is partially dispersed in the metallic matrix with amorphisation of the electrode material and in a second step we can observe the alloy forming (Li 3 Sb). However this amorphous alloy remains in interaction with the matrix allowing then a good reversibility.

  14. Tetrahedral 1B4Sb nanoclusters in GaP:(B, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Elyukhin, V A, E-mail: elyukhin@cinvestav.m [Departamento de Ingenieria Electrica-SEES, CINVESTAV-IPN, Avenida IPN 2508, Col. San Pedro Zacatenco, C. P. 07360, Mexico, D. F. (Mexico)

    2009-05-01

    Self-assembling conditions of 1B4Sb tetrahedral nanoclusters in GaP doped with boron and Sb isoelectronic impurities are represented in the ultradilute and dilute limits of the boron and Sb contents, respectively. The fulfilled estimates demonstrated the preferential complete or almost complete allocation of boron atoms in 1B4Sb nanoclusters at temperatures of 500 {sup 0}C and 900 {sup 0}C, respectively. The significant decrease of the sum of the free energies of the constituent compounds is the main origin of self-assembling. The reduction of the strain energy is the additional cause of this phenomenon.

  15. SN 2006oz

    DEFF Research Database (Denmark)

    Leloudas, Georgios; Chatzopoulos, E.; Dilday, B.

    2012-01-01

    to contribute to a better understanding of these objects by studying SN 2006oz, a newly-recognized member of this class. Methods. We present multi-color light curves of SN 2006oz from the SDSS-II SN Survey that cover its rise time, as well as an optical spectrum that shows that the explosion occurred at z ~ 0.......376. We fitted black-body functions to estimate the temperature and radius evolution of the photosphere and used the parametrized code SYNOW to model the spectrum. We constructed a bolometric light curve and compared it with explosion models. In addition, we conducted a deep search for the host galaxy...... to a recombination wave in a circumstellar medium (CSM) and discuss whether this is a common property of all similar explosions. The subsequent rise can be equally well described by input from a magnetar or by ejecta-CSM interaction, but the models are not well constrained owing to the lack of post...

  16. Decay of /sup 125/Sb

    Energy Technology Data Exchange (ETDEWEB)

    Singh, K; Sahota, H S

    1983-01-01

    The 2.7 yr beta decay of /sup 125/Sb yields /sup 125/Te has been studied using Ge(Li), Si(Li) and Ge detectors and the directional correlation technique New lines at 58, 111, 642, 693 and 729 keV have been detected and fitted in the decay scheme in the already existing levels, besides the one suggested at 729 keV. The intensities of 20, 109, 111, 116, 172, 178 and 198 keV transitions have been measured more precisely than before. The ..gamma..-..gamma.. directional correlation measurements in the 208-463, 204-176 and 321-176 keV cascades have enabled to assign a uniquue spin 7/2/sup -/ to the 525 keV level. The multipole mixing ratios for the 204, 208 and 321 keV transitions have been found as M1 + (14.75 +- 3.55)%E2, M1 + (4.5 +- 2.0)%E2 and E1 + (2.70 +- 0.75)%M2, respectively.

  17. Heavy Chain Diseases

    Science.gov (United States)

    ... of heavy chain produced: Alpha Gamma Mu Alpha Heavy Chain Disease Alpha heavy chain disease (IgA heavy ... the disease or lead to a remission. Gamma Heavy Chain Disease Gamma heavy chain disease (IgG heavy ...

  18. The equilibrium diagram and some properties of alloys Gd5Sb3-Tb5Sb3 system

    International Nuclear Information System (INIS)

    Azizov, Yu.S.; Abulkhaev, V.D.; Ganiev, I.N.

    2001-01-01

    The purpose of present work is investigation equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system in total range of concentrations. Equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system investigated by methods of difference-thermal, roentgen-phase and metallographic analyses. For the first time on the base of difference-thermal, roentgen-phase and metallographic analyses was formed the equilibrium diagram of Gd 5 Sb 3 -Tb 5 Sb 3 system. Was determined the cristal-chemical parameters of solid solutions with general formula Gd x Tb 5 - x Sb 3

  19. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  20. Study of GeSn Alloy for Low Cost Monolithic Mid Infrared Quantum Well Sensor

    Directory of Open Access Journals (Sweden)

    Prakash PAREEK

    2017-02-01

    Full Text Available This paper focuses on theoretical study of Tin incorporated group IV alloys particularly GeSn and design of quantum well sensor for mid infrared sensing applications. Initially, the physics behind the selection of material for midinfrared sensor is explained. The importance of controlling strain in GeSn alloy is also explained. The physical background and motivation for incorporation of Tin(Sn in Germanium is briefly narrated. Eigen energy states for different Sn concentrations are obtained for strain compensated quantum well in G valley conduction band (GCB, heavy hole (HH band and light hole (LH band by solving coupled Schrödinger and Poisson equations simultaneously. Sn concentration dependent absorption spectra for HH- GCB transition reveals that significant absorption observed in mid infrared range (3-5 µm. So, Ge1-x Snx quantum well can be used for mid infrared sensing applications.

  1. Theoretical study of defects Cu{sub 3}SbSe{sub 4}: Search for optimum dopants for enhancing thermoelectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Do, Dat T., E-mail: dodat@msu.edu; Mahanti, S.D., E-mail: mahanti@pa.msu.edu

    2015-03-15

    Highlights: • We present the first systematic study of defects in Cu{sub 3}SbSe{sub 4}. • Possible n-type and p-type dopants are suggested for Cu and Sb site. • Transition-metal substitutions on Sb potentially improve thermoelectric properties. • Transition-metal substitutions on Se strongly distort local crystal geometry. • p-type behavior of as synthesized Cu{sub 3}SbSe{sub 4} is most likely due to Cu. - Abstract: Cu{sub 3}SbSe{sub 4} is a promising thermoelectric material due to high thermopower (>400μV/K) at 300 K and higher. Although it has a simple crystal structure derived from zinc blende structure, previous work has shown that the physics of band gap formation is quite subtle due to the importance of active lone pair (5s{sup 2}) of Sb and the non-local exchange interaction between these and Se 5p electrons. Since for any application of semiconductors understanding the properties of defects is essential, we discuss the results of a systematic study of several point defects in Cu{sub 3}SbSe{sub 4} including vacancies and substitutions for each of the components. First principles calculations using density functional theory show that among variety of possible dopants, p-type doping can be done by substituting Sb with group IV elements including Sn, Ge, Pb and Ti and n-type doping can be done by replacing Cu by Mg, Zn. Doping at the Se site appears to be rather difficult. Electronic structure calculations also suggest that the p-type behavior seen in nominally pure Cu{sub 3}SbSe{sub 4} is most likely due to Cu vacancy rather than Se vacancy.

  2. The influence of boron addtion on structural, magnetic and thermoelectric properties of Ni2Mn1.52Sb0.48Bx

    DEFF Research Database (Denmark)

    Van Nong, Ngo; Le, Thanh Hung; Tuan Tai, Luu

    Heusler alloys known as X2YZ (full­-Heusler) and XYZ (half-­Hersler), where X and Y denote the transition metals and X is s-­p such as Al, Ga, Sb, Sn, In, ect., have been extensively studied since they possess many important properties [1-­3] like shape memory effect, magnetocaloric effect (MCE...

  3. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Lien

    2011-04-13

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In{sub 1-x}Mn{sub x}Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 {mu}m, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm{sup 2}/V s Vs with associated electron concentration of 2.9.10{sup 6} cm{sup -3} at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm{sup 2}/V s measured at 300 K, with an associated carrier concentration of 2.6.10{sup 1}6 cm{sup -3} is found for the best sample that was grown at 340 C with a 0.06 {mu}m-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In{sub 1-x}Mn{sub x}Sb/GaAs (001) is prepared by adding a few percent of Mn into the

  4. Polarity-dependent resistance switching in GeSbTe phase-change thin films : The importance of excess Sb in filament formation

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Oosthoek, Jasper L. M.; van den Dool, Pim; Palasantzas, George; Pauza, Andrew

    2009-01-01

    We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge(2)Sb(2+x)Te(5) and stoichiometric Ge(2)Sb(2)Te(5) samples. This type of switching in Ge(2)Sb(2+x)Te(5) films is reversible with

  5. Nuclear-spectroscopic studies in the 132Sn region

    International Nuclear Information System (INIS)

    Arndt, Oliver

    2007-10-01

    In this work investigations on r-process nuclides around the N = 82 shell closure are done. The so far unknown half-lives and P n -values of 137-139 Sb and 139 Te and their impact to r-process theory are given. Further the results of Shergur et. al. of neutron rich tin ( 137,138 Sn) are verified and in some points improved. New data on γ-decay spectroscopy for 136 Sn from single spectra is published. To improve beam quality and solve long known problems on ISOL-facilities with isobaric contamination, new techniques are discussed. A special focus is on molecular sidebands, which is first time adapted to a target/ion source unit in a mass separation facility. It was possible to create a strong SnS + sideband and in this way to reduce isobaric background with good beam intensities. On the other hand, a target with temperature controlled transfer line was build and its characteristics are discussed. To improve selectivity of a given experiment on neutron rich nuclei a new detector system for nγ-coincidences was developed. Due to a special electronically setup of the new system it was possible to downsize the coincidence window compared to earlier attempts. (orig.)

  6. Heavy baryons

    International Nuclear Information System (INIS)

    Koerner, J.G.

    1994-06-01

    We review the experimental and theoretical status of baryons containing one heavy quark. The charm and bottom baryon states are classified and their mass spectra are listed. The appropriate theoretical framework for the description of heavy baryons is the Heavy Quark Effective Theory, whose general ideas and methods are introduced and illustrated in specific examples. We present simple covariant expressions for the spin wave functions of heavy baryons including p-wave baryons. The covariant spin wave functions are used to determine the Heavy Quark Symmetry structure of flavour-changing current-induced transitions between heavy baryons as well as one-pion and one-photon transitions between heavy baryons of the same flavour. We discuss 1/m Q corrections to the current-induced transitions as well as the structure of heavy to light baryon transitions. Whenever possible we attempt to present numbers to compare with experiment by making use of further model-dependent assumptions as e.g. the constituent picture for light quarks. We highlight recent advances in the theoretical understanding of the inclusive decays of hadrons containing one heavy quark including polarization. For exclusive semileptonic decays we discuss rates, angular decay distributions and polarization effects. We provide an update of the experimental and theoretical status of lifetimes of heavy baryons and of exclusive nonleptonic two body decays of charm baryons. (orig.)

  7. Heavy metals, metalloids and other hazardous elements in marine plastic litter.

    Science.gov (United States)

    Turner, Andrew

    2016-10-15

    Plastics, foams and ropes collected from beaches in SW England have been analysed for As, Ba, Br, Cd, Cl, Cr, Cu, Hg, Ni, Pb, Sb, Se, Sn and Zn by field-portable-x-ray fluorescence spectrometry. High concentrations of Cl in foams that were not PVC-based were attributed to the presence of chlorinated flame retardants. Likewise, high concentrations of Br among both foams and plastics were attributed to the presence of brominated flame retardants. Regarding heavy metals and metalloids, Cd and Pb were of greatest concern from an environmental perspective. Lead was encountered in plastics, foams and ropes and up to concentrations of 17,500μgg(-1) due to its historical use in stabilisers, colourants and catalysts in the plastics industry. Detectable Cd was restricted to plastics, where its concentration often exceeded 1000μgg(-1); its occurrence is attributed to the use of both Cd-based stabilisers and colourants in a variety of products. Copyright © 2016 Elsevier Ltd. All rights reserved.

  8. Nuclear-spectroscopic studies in the {sup 132}Sn region; Kernspektroskopische Untersuchungen in der {sup 132}Sn-Region

    Energy Technology Data Exchange (ETDEWEB)

    Arndt, Oliver

    2007-10-15

    In this work investigations on r-process nuclides around the N = 82 shell closure are done. The so far unknown half-lives and P{sub n}-values of {sup 137-139}Sb and {sup 139}Te and their impact to r-process theory are given. Further the results of Shergur et. al. of neutron rich tin ({sup 137,138}Sn) are verified and in some points improved. New data on {gamma}-decay spectroscopy for {sup 136}Sn from single spectra is published. To improve beam quality and solve long known problems on ISOL-facilities with isobaric contamination, new techniques are discussed. A special focus is on molecular sidebands, which is first time adapted to a target/ion source unit in a mass separation facility. It was possible to create a strong SnS{sup +} sideband and in this way to reduce isobaric background with good beam intensities. On the other hand, a target with temperature controlled transfer line was build and its characteristics are discussed. To improve selectivity of a given experiment on neutron rich nuclei a new detector system for n{gamma}-coincidences was developed. Due to a special electronically setup of the new system it was possible to downsize the coincidence window compared to earlier attempts. (orig.)

  9. DWPF simulant CPC studies for SB8

    Energy Technology Data Exchange (ETDEWEB)

    Koopman, D. C.; Zamecnik, J. R.

    2013-06-25

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  10. DWPF simulant CPC studies for SB8

    International Nuclear Information System (INIS)

    Koopman, D. C.; Zamecnik, J. R.

    2013-01-01

    The Savannah River National Laboratory (SRNL) accepted a technical task request (TTR) from Waste Solidification Engineering to perform simulant tests to support the qualification of Sludge Batch 8 (SB8) and to develop the flowsheet for SB8 in the Defense Waste Processing Facility (DWPF). These efforts pertained to the DWPF Chemical Process Cell (CPC). Separate studies were conducted for frit development and glass properties (including REDOX). The SRNL CPC effort had two primary phases divided by the decision to drop Tank 12 from the SB8 constituents. This report focuses on the second phase with SB8 compositions that do not contain the Tank 12 piece. A separate report will document the initial phase of SB8 testing that included Tank 12. The second phase of SB8 studies consisted of two sets of CPC studies. The first study involved CPC testing of an SB8 simulant for Tank 51 to support the CPC demonstration of the washed Tank 51 qualification sample in the SRNL Shielded Cells facility. SB8-Tank 51 was a high iron-low aluminum waste with fairly high mercury and moderate noble metal concentrations. Tank 51 was ultimately washed to about 1.5 M sodium which is the highest wash endpoint since SB3-Tank 51. This study included three simulations of the DWPF Sludge Receipt and Adjustment Tank (SRAT) cycle and Slurry Mix Evaporator (SME) cycle with the sludge-only flowsheet at nominal DWPF processing conditions and three different acid stoichiometries. These runs produced a set of recommendations that were used to guide the successful SRNL qualification SRAT/SME demonstration with actual Tank 51 washed waste. The second study involved five SRAT/SME runs with SB8-Tank 40 simulant. Four of the runs were designed to define the acid requirements for sludge-only processing in DWPF with respect to nitrite destruction and hydrogen generation. The fifth run was an intermediate acid stoichiometry demonstration of the coupled flowsheet for SB8. These runs produced a set of processing

  11. Lattice location of the group V elements Sb, As, and P in ZnO

    CERN Document Server

    Wahl, Ulrich; Mendonça, Tânia; Decoster, Stefan

    2010-01-01

    Modifying the properties of ZnO by means of incorporating antimony, arsenic or phosphorus impurities is of interest since these group V elements have been reported in the literature among the few successful p-type dopants in this technologically promising II-VI compound. The lattice location of ion-implanted Sb, As, and P in ZnO single crystals was investigated by means of the electron emission channeling technique using the radioactive isotopes $^{124}$Sb, $^{73}$As and $^{33}$P and it is found that they preferentially occupy substitutional Zn sites while the possible fractions on substitutional O sites are a few percent at maximum. The lattice site preference is understandable from the relatively large ionic size of the heavy mass group V elements. Unfortunately the presented results cannot finally settle the interesting issue whether substitutional Sb, As or P on oxygen sites or Sb$_{Zn}$−2V$_{Zn}$, As$_{Zn}$−2V$_{Zn}$ or P$_{Zn}$−2V$_{Zn}$ complexes (as suggested in the literature) are responsible f...

  12. Isomer shifts and chemical bonding in crystalline Sn(II) and Sn(IV) compounds

    International Nuclear Information System (INIS)

    Terra, J.; Guenzburger, D.

    1991-01-01

    First-principles self-consistent Local Density calculations of the electronic structure of clusters representing Sn(II) (SnO, SnF 2 , SnS, SnSe) and Sn(IV) (SnO 2 , SnF 4 ) crystalline compounds were performed. Values of the electron density at the Sn nucleus were obtained and related to measured values of the Moessbauer Isomer Shifts reported in the literature. The nuclear parameter of 119 Sn derived was ΔR/R=(1.58±0.14)x10 -4 . The chemical bonding in the solids was analysed and related to the electron densities obtained. (author)

  13. Heavy flavors

    International Nuclear Information System (INIS)

    Cox, B.; Gilman, F.J.; Gottschalk, T.D.

    1986-11-01

    A range of issues pertaining to heavy flavors at the SSC is examined including heavy flavor production by gluon-gluon fusion and by shower evolution of gluon jets, flavor tagging, reconstruction of Higgs and W bosons, and the study of rare decays and CP violation in the B meson system. A specific detector for doing heavy flavor physics and tuned to this latter study at the SSC, the TASTER, is described. 36 refs., 10 figs

  14. Quasiparticle relaxation in Heavy Fermions studied using Inverse Fourier Transform of optical conductivity

    International Nuclear Information System (INIS)

    Dordevic, S.V.

    2012-01-01

    Inverse Fourier Transform of optical conductivity is used for studies of quasiparticle relaxation in Heavy Fermions in time domain. We demonstrate the usefulness of the procedure on model spectra and then use it to study quasiparticle relaxation in two Heavy Fermions YbFe 4 Sb 12 and CeRu 4 Sb 12 . Optical conductivity in time domain reveals details of quasiparticle relaxation close to the Fermi level, not readily accessible from the spectra in the frequency domain. In particular, we find that the relaxation of heavy quasiparticles does not start instantaneously, but typically after a few hundred femto-seconds.

  15. Reduction in thermal conductivity of BiSbTe lump

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Kaleem [King Saud University, Sustainable Energy Technologies Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia); Wan, C. [Tsinghua University, State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Beijing (China); Al-Eshaikh, M.A.; Kadachi, A.N. [King Saud University, Research Center, College of Engineering, PO Box 800, Riyadh (Saudi Arabia)

    2017-03-15

    In this work, systematic investigations on the thermal conductivities of BiSbTe lump, microstructured pristine BiSbTe bulk and single wall carbon nanotubes (SWCNTs)/BiSbTe bulk nanocomposites were performed. BiSbTe lumps were crushed to form a coarse powder (200 μm) and effect of particle size reduction on the effective thermal conductivity of BiSbTe (200 μm) bulk were analyzed. For further reduction in the conductivity, a two pronged strategy has been employed. First, additional refinement of BiSbTe (200 μm) were performed through ball milling in an inert environment. Second, SWCNTs in 0.75, and 1.0 vol% were distributed uniformly in the fine BiSbTe ball milled powder. The results showed that the effective thermal conductivities decrease with the reduction in the particle size from lump to BiSbTe (200 μm) bulk as well as with the addition of SWCNTs accompanied by further refinement of BiSbTe particles. The significant reduction in thermal conductivities of the lump was achieved for pure BiSbTe (200 μm) bulk and 0.75 vol% of SWCNTs/BiSbTe composite. This can be ascribed to the enhanced phonon scattering by the grain boundaries between the nanostructured BiSbTe particles as well as the interfaces between BiSbTe and the low dimensional carbon nanotubes. (orig.)

  16. Sb(V reactivity with human blood components: redox effects.

    Directory of Open Access Journals (Sweden)

    Silvana López

    Full Text Available We assessed the reactivity of Sb(V in human blood. Sb(V reactivity was determined using an HPLC-HG-AFS hyphenated system. Sb(V was partially reduced to Sb(III in blood incubation experiments; however, Sb(III was a highly unstable species. The addition of 0.1 mol L(-1 EDTA prevented Sb(III oxidation, thus enabling the detection of the reduction of Sb(V to Sb(III. The transformation of Sb(V to Sb(III in human whole blood was assessed because the reduction of Sb(V in human blood may likely generate redox side effects. Our results indicate that glutathione was the reducing agent in this reaction and that Sb(V significantly decreased the GSH/GSSG ratio from 0.32 ± 0.09 to 0.07 ± 0.03. Moreover, the presence of 200 ng mL(-1 of Sb(V increased the activity of superoxide dismutase from 4.4 ± 0.1 to 7.0 ± 0.4 U mL(-1 and decreased the activity of glutathione peroxidase from 62 ± 1 to 34 ± 2 nmol min(-1 mL(-1.

  17. Compositional and structural characterisation of GaSb and GaInSb

    International Nuclear Information System (INIS)

    Corregidor, V.; Alves, E.; Alves, L.C.; Barradas, N.P.; Duffar, Th.; Franco, N.; Marques, C.; Mitric, A.

    2005-01-01

    Low band gap III-V semiconductors are researched for applications in thermophotovoltaic technology. GaSb crystal is often used as a substrate. Ga 1-x In x Sb is also a promising substrate material, because its lattice parameters can be adjusted by controlling x. We used a new method to synthesise GaSb and GaInSb, in which a high frequency alternate magnetic field is used to heat, to melt and to mix the elements. We present a compositional and structural characterisation of the materials using a combination of complementary techniques. Rutherford backscattering was used to determine accurately the composition of the GaSb. With proton induced X-ray emission in conjunction with a 3 x 3 μm 2 micro-beam we studied the homogeneity of the samples. Structural analysis and phase identification were done with X-ray diffraction. The results for GaSb show a homogeneous composition while the GaInSb samples were found to be strongly heterogeneous at the end of the ingot. The ingots produced are competitive feed material, when compared to other growth techniques, to be used in a second step for the production of good quality ternary crystals

  18. The Fermi surface of CeSb

    International Nuclear Information System (INIS)

    Crabtree, G.W.; Aoki, H.; Joss, W.; Hulliger, F.

    1987-01-01

    This paper uses accurate Fermi surface measurements as a test of hybridization models in CeSb. Detailed measurements of the Fermi surface geometry and effective masses are presented which show a number of unusual properties associated with the magnetic structure and anisotropy. Measurements are compared with predictions of a band structure in which the f-electron is assumed to be local, interacting with the conduction electrons only through anisotropic Coulomb and exchange interactions. This model reproduces all the unusual features observed in the measurements and suggests that hybridization is not essential to describing the electronic properties of CeSb

  19. Binuclear model of an Sb-galaxy

    International Nuclear Information System (INIS)

    Nezhinskij, E.M.

    1980-01-01

    To explain the causes of origin of the observed peculiarities of SB-galaxies a self-consistent stable model of an Sb-galaxy is constructed. The evolutionary scheme of origin of this model is described. The model consists of an extensive spherical corona, of two point nuclei and of a cloud of particles of infinitely small mass, the latter being bar-shaped and situated in the neighbourhood of the nuclei. The model has the following properties: the nuclei move along the circular orbit, whose centre coincides with that of the corona; the motion of the particles of the bar-shaped cloud is stable in the sense of Hill [ru

  20. Quadrupole interaction studies of Hg in Sb

    International Nuclear Information System (INIS)

    Soares, J.C.; Krien, K.; Herzog, P.; Folle, H.R.; Freitag, K.; Reuschenbach, F.; Reuschenbach, M.; Trzcinski, R.

    1978-01-01

    Time differential perturbed angular correlation and nuclear orientation studies of the electric quadrupole interaction for Hg in Sb have been performed. The effective field gradients at room temperature and below 0.05K have been derived. These two values are no indication for an anomalous temperature dependence of the effective field gradient for Hg in Sb. The value of the electric field gradient fits well into the systematics for Hg in other hosts. It is shown that the electronic enhancements of the field gradients are correlated to the valence of the impurities and are rather insensitive to the host properties. (orig./HPOE) [de

  1. Identification of new nuclei at and beyond the proton drip-line near the doubly-magic nucleus 100Sn

    International Nuclear Information System (INIS)

    Anne, R.; Auger, G.; Bazin, D.; Corre, J.M.; Hue, R.; Lewitowicz, M.; Saint-Laurent, M.G.; Rykaczewski, K.; Grzywacz, R.; Pfuetzner, M.; Zylicz, J.; Borrel, V.; Guillemaud-Mueller, D.; Mueller, A.C.; Pougheon, F.; Sorlin, O.; Fomichov, A.; Penionzhkevich, Y.; Lukyanov, S.; Tarasov, O.; Huyse, M.; Szerypo, J.; Wauters, J.

    1994-01-01

    The new neutron-deficient nuclei 103 Sb, 104 Sb, 98 In, 91 Pd, 89 Rh and 87 Ru have been identified among the quasi-fragmentation products of a 112 Sn beam (63 MeV/nucleon). The fragment identification based on energy-loss, total kinetic energy and time-of-flight measurements has been independently confirmed via observation of γ-radiation following the decay of known short-lived isomers. The region of known isotopes is extended to the predicted proton drip-line for indium and silver, and beyond it for antimony and rhodium. Tentative evidence for the existence of 105 Te, 99 Sn and 93 Ag is also presented. (authors). 28 refs., 2 figs

  2. 121Sb-NMR study of filled skutterudite CeOs4Sb12

    International Nuclear Information System (INIS)

    Yogi, M.; Niki, H.; Mukuda, H.; Kitaoka, Y.; Sugawara, H.; Sato, H.

    2007-01-01

    121 Sb nuclear magnetic resonance (NMR) of filled skutterudite compound CeOs 4 Sb 12 has been carried out to investigate a spin fluctuation below T∼25K. In spite of a powdered sample, many sharp peaks, similar to a data for single crystal, were observed because of an orientation of the sample from the anisotropy of the magnetization. A numerical calculation well reproduces resonance fields for Sb(1) sites with H parallel V zz . The nuclear spin-lattice relaxation rate divided by temperature 1/T 1 T shows continuous decrease with increasing magnetic field, indicating a suppression of the spin fluctuation by the field

  3. Effects of the copper content on the structural and electrical properties of Cu2ZnSnSe4 bulks

    Science.gov (United States)

    Tsega, Moges; Dejene, F. B.; Koao, L. F.

    2016-01-01

    We have investigated the concept of defect in CuxZnSnSe4 (x=1.6-2.0) and Cuy(Zn0.9Sn1.1)Se4 (y= 1.6-2.0) bulks prepared by liquid-phase sintering at 600 °C for 2 h with soluble sintering aids of Sb2S3 and Te. All samples were found to exhibit p-type semiconductor for CuxZnSnSe4, while n-type of behavior obtained at y= 1.8-2.0 for Cuy(Zn0.9Sn1.1)Se4 pellets. The Cu vacancy acts as an acceptor point defect to form the p-type semiconductor, and Sn4+ acts as a donor to form the n-type behavior for the Sn-rich CZTSe. SEM images of pellets show dense surface morphology, and increase in grain size upon Cu inclusion. The largely increased Hall mobility and the slightly changed carrier concentration for Cuy(Zn0.9Sn1.1)Se4 with increasing the Cu content is related to the types of its defects. At y=2.0 with carrier concentration of 4.88×1017 cm-3 showed the highest mobility of around 58 cm2/V s. Based upon the proposed point defects, the CZTSe property can be consistently explained.

  4. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

    International Nuclear Information System (INIS)

    Tran, Lien

    2011-01-01

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

  5. Total β-decay energies and masses of tin, antimony and tellurium isotopes in the vicinity of 50132Sn82

    International Nuclear Information System (INIS)

    Lund, E.; Aleklett, K.; Rudstam, G.

    1977-01-01

    Experimental β-decay energies for short-lived isotopes of tin, antimony and tellurium are presented. Mass-separated sources were produced at the on-line isotope separator OSIRIS. By applying β-γ coincidence methods, total β-decay energies have been determined for the following nuclides: 127-131 Sn, 128 130 131 134 Sb and 134 135 Te. The atomic mass excess has been derived for these nuclei, and comparisons are made with mass formula predictions. (Auth.)

  6. Sulfuric Acid Corrosion of Low Sb - Pb Battery Alloys | Ntukogu ...

    African Journals Online (AJOL)

    The corrosion properties of low Sb - Pb alloys developed for maintenance free motive power industrial batteries was studied by a bare grid constant current method and compared to those of the conventional Pb- 6% Sb alloy. Low Sb-Pb alloys with Se and As grain refiners were found to have higher corrosion rates than the ...

  7. SULFURIC ACID CORROSION OF LOW Sb - Pb BATTERY ALLOYS

    African Journals Online (AJOL)

    user

    1983-09-01

    Sep 1, 1983 ... (Manuscript received February,1983). ABSTRACT. The corrosion properties of low Sb - Pb alloys developed for maintenance free motive power industrial batteries was studied by a bare grid constant current method and compared to those of the conventional. Pb- 6% Sb alloy. Low Sb-Pb alloys with Se and ...

  8. Building Planner Commitment : Are California's SB 375 and Oregon's SB 1059 Models for Climate-Change Mitigation?

    Science.gov (United States)

    2017-11-01

    California's Sustainable Communities and Climate Protection Act (SB 375) and the Oregon Sustainable Transportation Initiative (SB 1059) have made them the first states in the nation to try and reduce greenhouse gas (GHG) emissions using the transport...

  9. Recovering Parameters of Johnson's SB Distribution

    Science.gov (United States)

    Bernard R. Parresol

    2003-01-01

    A new parameter recovery model for Johnson's SB distribution is developed. This latest alternative approach permits recovery of the range and both shape parameters. Previous models recovered only the two shape parameters. Also, a simple procedure for estimating the distribution minimum from sample values is presented. The new methodology...

  10. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

    Czech Academy of Sciences Publication Activity Database

    Mikhailova, M. P.; Ivanov, E.V.; Moiseev, K. D.; Yakovlev, Yu. P.; Hulicius, Eduard; Hospodková, Alice; Pangrác, Jiří; Šimeček, Tomislav

    2010-01-01

    Roč. 44, č. 1 (2010), 66-71 ISSN 1063-7826 Institutional research plan: CEZ:AV0Z10100521 Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.603, year: 2010

  11. Heavy metals biogeochemistry in abandoned mining areas

    Directory of Open Access Journals (Sweden)

    Favas P. J. C.

    2013-04-01

    Full Text Available Plants growing on the abandoned Portuguese mines, highly contaminated with W, Sn, As, Cd, Cu, Zn and Pb, have been studied for their biogeochemical indication/prospecting and mine restoration potential. The results of analysis show that the species best suited for biogeochemical indicating are: aerial tissues of Halimium umbellatum (L. Spach, for As and W; leaves of Erica arborea L. for Bi, Sn, W and mostly Pb; stems of Erica arborea L. for Pb; needles of Pinus pinaster Aiton and aerial tissues of Pteridium aquilinum (L. Kuhn for W; and leaves of Quercus faginea Lam. for Sn. The aquatic plant studied (Ranunculus peltatus Schrank can be used to decrease the heavy metals, and arsenic amounts into the aquatic environment affected by acid mine drainages.

  12. Highly efficient electrochemical degradation of perfluorooctanoic acid (PFOA) by F-doped Ti/SnO{sub 2} electrode

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Bo, E-mail: boyang@szu.edu.cn [Department of Environmental Engineering, College of Chemistry and Chemical Engineering, Shenzhen University, Shenzhen 518060 (China); School of Environment, POPs Research Center, Tsinghua University, Beijing 100084 (China); Jiang, Chaojin [Department of Environmental Engineering, College of Chemistry and Chemical Engineering, Shenzhen University, Shenzhen 518060 (China); Yu, Gang, E-mail: yg-den@tsinghua.edu.cn [School of Environment, POPs Research Center, Tsinghua University, Beijing 100084 (China); Zhuo, Qiongfang [South China Institute of Environmental Sciences, The Ministry of Environment Protection, Guangzhou 510655 (China); Deng, Shubo [School of Environment, POPs Research Center, Tsinghua University, Beijing 100084 (China); Wu, Jinhua [School of Environment and Energy, South China University of Technology, Guangzhou 510006 (China); Zhang, Hong [Department of Environmental Engineering, College of Chemistry and Chemical Engineering, Shenzhen University, Shenzhen 518060 (China)

    2015-12-15

    Highlights: • A novel SnO{sub 2} electrode is prepared by F doping instead of the traditional Sb doping. • SnF{sub 4} as single-source precursor is used to fabricate the long-life Ti/SnO{sub 2}–F anode. • F-doped Ti/SnO{sub 2} anode possesses high OEP and decomposition ability for PFOA. • Further mechanistic detail of PFOA degradation on Ti/SnO{sub 2}–F electrode is proposed. - Abstract: The novel F-doped Ti/SnO{sub 2} electrode prepared by SnF{sub 4} as the single-source precursor was used for electrochemical degradation of aqueous perfluorooctanoic acid (PFOA). Higher oxidation reactivity and significantly longer service life were achieved for Ti/SnO{sub 2}–F electrode than Ti/SnO{sub 2}–X (X = Cl, Br, I, or Sb) electrode, which could decomposed over 99% of PFOA (50 mL of 100 mg L{sup −1}) within 30-min electrolysis. The property of Ti/SnO{sub 2}–F electrode and its electrooxidation mechanism were investigated by XRD, SEM–EDX, EIS, LSV, and interfacial resistance measurements. We propose that the similar ionic radii of F and O as well as strong electronegativity of F caused its electrochemical stability with high oxygen evolution potential (OEP) and smooth surface to generate weakly adsorbed ·OH. The preparation conditions of electrode were also optimized including F doping amount, calcination temperature, and dip coating times, which revealed the formation process of electrode. Additionally, the major mineralization product, F{sup −}, and low concentration of shorter chain perfluorocarboxylic acids (PFCAs) were detected in solution. So the reaction pathway of PFOA electrooxidation was proposed by intermediate analysis. These results demonstrate that Ti/SnO{sub 2}–F electrode is promising for highly efficient treatment of PFOA in wastewater.

  13. Can iron plaque affect Sb(III) and Sb(V) uptake by plants under hydroponic conditions

    NARCIS (Netherlands)

    Ji, Ying; Lenz, Markus; Lenz, Markus; Schulin, Rainer; Tandy, Susan

    2018-01-01

    Antimony (Sb) contamination of soils is of concern due to h uman activities such as recycling of Sb containing Pb acid batteries, shooting and mining. However Sb uptake by plants is poorly documented, especially when plants are growing on waterlogged soils and iron plaques form on their roots. The

  14. Lower lattice thermal conductivity in SbAs than As or Sb monolayers: a first-principles study.

    Science.gov (United States)

    Guo, San-Dong; Liu, Jiang-Tao

    2017-12-06

    Phonon transport in group-VA element (As, Sb and Bi) monolayer semiconductors has been widely investigated in theory, and, of them, monolayer Sb (antimonene) has recently been synthesized. In this work, phonon transport in monolayer SbAs is investigated with a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of monolayer SbAs is lower than those of both monolayer As and Sb, and the corresponding sheet thermal conductance is 28.8 W K -1 at room temperature. To understand the lower lattice thermal conductivity in monolayer SbAs than those in monolayer As and Sb, the group velocities and phonon lifetimes of monolayer As, SbAs and Sb are calculated. The calculated results show that the group velocities of monolayer SbAs are between those of monolayer As and Sb, but that the phonon lifetimes of SbAs are smaller than those of both monolayer As and Sb. Hence, the low lattice thermal conductivity in monolayer SbAs is attributed to very small phonon lifetimes. Unexpectedly, the ZA branch has very little contribution to the total thermal conductivity, only 2.4%, which is obviously different from those of monolayer As and Sb with very large contributions. This can be explained by very small phonon lifetimes for the ZA branch of monolayer SbAs. The lower lattice thermal conductivity of monolayer SbAs compared to that of monolayer As or Sb can be understood by the alloying of As (Sb) with Sb (As), which should introduce phonon point defect scattering. We also consider the isotope and size effects on the lattice thermal conductivity. It is found that isotope scattering produces a neglectful effect, and the lattice thermal conductivity with a characteristic length smaller than 30 nm can reach a decrease of about 47%. These results may offer perspectives on tuning the lattice thermal conductivity by the mixture of multiple elements for applications of thermal management and

  15. Sorghum phytochrome B inhibits flowering in long days by activating expression of SbPRR37 and SbGHD7, repressors of SbEHD1, SbCN8 and SbCN12.

    Directory of Open Access Journals (Sweden)

    Shanshan Yang

    Full Text Available Light signaling by phytochrome B in long days inhibits flowering in sorghum by increasing expression of the long day floral repressors PSEUDORESPONSE REGULATOR PROTEIN (SbPRR37, Ma1 and GRAIN NUMBER, PLANT HEIGHT AND HEADING DATE 7 (SbGHD7, Ma6. SbPRR37 and SbGHD7 RNA abundance peaks in the morning and in the evening of long days through coordinate regulation by light and output from the circadian clock. 58 M, a phytochrome B deficient (phyB-1, ma3R genotype, flowered ∼60 days earlier than 100 M (PHYB, Ma3 in long days and ∼11 days earlier in short days. Populations derived from 58 M (Ma1, ma3R, Ma5, ma6 and R.07007 (Ma1, Ma3, ma5, Ma6 varied in flowering time due to QTL aligned to PHYB/phyB-1 (Ma3, Ma5, and GHD7/ghd7-1 (Ma6. PHYC was proposed as a candidate gene for Ma5 based on alignment and allelic variation. PHYB and Ma5 (PHYC were epistatic to Ma1 and Ma6 and progeny recessive for either gene flowered early in long days. Light signaling mediated by PhyB was required for high expression of the floral repressors SbPRR37 and SbGHD7 during the evening of long days. In 100 M (PHYB the floral activators SbEHD1, SbCN8 and SbCN12 were repressed in long days and de-repressed in short days. In 58 M (phyB-1 these genes were highly expressed in long and short days. Furthermore, SbCN15, the ortholog of rice Hd3a (FT, is expressed at low levels in 100 M but at high levels in 58 M (phyB-1 regardless of day length, indicating that PhyB regulation of SbCN15 expression may modify flowering time in a photoperiod-insensitive manner.

  16. Thermoelectric properties of ZnSb films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Watko, E; Colpitts, T

    1997-07-01

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  17. In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Guseynov, R. R.; Tanriverdiyev, V. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede [Stony Brook, Stony Brook University (United States); Aliyeva, Ye. N.; Aliguliyeva, Kh. V.; Abdullayev, N. A., E-mail: abnadir@mail.ru; Mamedov, N. T. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

    2017-04-15

    Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

  18. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

    Science.gov (United States)

    Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

    2017-07-01

    The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

  19. Multi-q Mesoscale Magnetism in CeAuSb2

    DEFF Research Database (Denmark)

    Marcus, Guy G.; Kim, Dae-Jeong; Tutmaher, Jacob A.

    2018-01-01

    We report the discovery of a field driven transition from a single-q to multi-q spin density wave (SDW) in the tetragonal heavy fermion compound CeAuSb2. Polarized along c, the sinusoidal SDW amplitude is 1.8ð2ÞμB/Ce for T ≪ TN ¼ 6.25ð10Þ K with a wave vector q1 ¼ ðη; η; 1/2Þ ½η ¼ 0.136ð2Þ. For H...

  20. (V,Nb)-doped half Heusler alloys based on {Ti,Zr,Hf}NiSn with high ZT

    International Nuclear Information System (INIS)

    Rogl, G.; Sauerschnig, P.; Rykavets, Z.; Romaka, V.V.; Heinrich, P.; Hinterleitner, B.; Grytsiv, A.; Bauer, E.; Rogl, P.

    2017-01-01

    Half Heusler alloys are among the most promising materials for thermoelectric generators as they can be used in a wide temperature range and their starting materials are abundant and cheap, the latter as long as no hafnium is involved. For Sb-doped Ti 0.5 Zr 0.25 Hf 0.25 NiSn Sakurada and Shutoh in 2008 have published ZT max  = 1.5 at 690 K, a value that hitherto was never reproduced independently. In this paper we successfully prepared Ti 0.5 Zr 0.25 Hf 0.25 NiSn with ZT max  = 1.5, however, at higher temperature (825 K). As the main goal is to produce hafnium – free half Heusler alloys, we investigated the influence of niobium or vanadium dopants on Ti x Zr 1−x NiSn 0.98 Sb 0.02 , reaching ZTs > 1.2 and thermal-electric conversion efficiencies up to 13.1%. For Hf-free n-type TiNiSn-based half Heusler alloys these values are unsurpassed. In order to further improve our thermoelectric materials our study is completed by electrical resistivity and thermal conductivity data in the low temperature range but also by mechanical properties (elastic moduli, hardness) at room temperature. The electrical properties have been discussed in comparison with DFT calculations.

  1. Growth of intermetallics between Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layered structures

    International Nuclear Information System (INIS)

    Horváth, Barbara; Illés, Balázs; Shinohara, Tadashi

    2014-01-01

    Intermetallic growth mechanisms and rates are investigated in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. An 8–10 μm thick Sn surface finish layer was electroplated onto a Cu substrate with a 1.5–2 μm thick Ni or Ag barrier layer. In order to induce intermetallic layer growth, the samples were aged in elevated temperatures: 50 °C and 125 °C. Intermetallic layer growth was checked by focused ion beam–scanning ion microscope. The microstructures and chemical compositions of the intermetallic layers were observed with a transmission electron microscope. It has been found that Ni barrier layers can effectively block the development of Cu 6 Sn 5 intermetallics. The intermetallic growth characteristics in the Sn/Cu and Sn/Ni/Cu systems are very similar. The intermetallic layer grows towards the Sn layer and forms a discrete layer. Differences were observed only in the growth gradients and surface roughness of the intermetallic layer which may explain the different tin whiskering properties. It was observed that the intermetallic layer growth mechanisms are completely different in the Ag barrier layers compared to the Ni layers. In the case of Sn/Ag/Cu systems, the Sn and Cu diffused through the Ag layer, formed Cu 6 Sn 5 intermetallics mainly at the Sn/Ag interface and consumed the Ag barrier layer. - Highlights: • Intermetallic growth was characterised in Sn/Ni/Cu, Sn/Ag/Cu and Sn/Cu layer systems. • Intermetallic growth rates and roughness are similar in the Sn/Cu and Sn/Ni/Cu systems. • Sn/Ni/Cu system contains the following intermetallic layer structure Sn–Ni3Sn4–Ni3Sn2–Ni3Sn–Ni. • In the case of Sn/Ag/Cu systems the Sn and Cu diffusion consumes the Ag barrier layer. • When Cu reaches the Sn/Ag interface a large amount of Cu 6 Sn 5 forms above the Ag layer

  2. Atomic structure determination of InSb(100)c(4x4) and c(8x2)phases by X-ray photoelectron diffraction

    International Nuclear Information System (INIS)

    Carvalho, V.E. de; Soares, E.A.; Magalhaes, M.R.P.; Paniago, R.; Siervo, A. de; Landers, R.

    2004-01-01

    Full text: The (100) surfaces of III-V compound semiconductors exhibit a variety of surface reconstructions that have attracted a lot of attention because of their importance in both homo epitaxial and heteroepitaxial growth. In the special case of the narrow bandgap InSb compound semiconductor its potential application in high-speed electronic and optoelectronic devices has encourage many studies of its (100) surface atomic structure. Among the reconstructions presented by the InSb(100) surface two of them have received more attention, that is, the observed well-ordered In-rich c(8x2) and Sb terminated c(4x4) surfaces. The c(8x2) structure can be obtained by exposing the surface to low energy ion bombardment and annealing, whereas the c(4x4) structure involves the chemisorption of Sb onto an already Sb-terminated surface. These two structures have been studied mainly by scanning tunneling microscopy (STM) and surface X-ray diffraction (SXRD) techniques and all the proposed models are based on the occurrence of group III (and/or V) blocks of dimmers occupying sites on the top or at subsurface layer. However, there are still difficulties in determining either the exact number of atoms in each dimmer or the number of dimmers in each block. With the goal of getting a better structure determination of the InSb(100) surface phases a photoelectron diffraction experiment (XPD) was carried out at LNLS where synchrotron and Al-K α radiations have been used. In the present work, the experimental and preliminary results of structure determination for both In Sn(100)c(8x2) and InSb(100)c(4x4) phases will be presented and discussed. (author)

  3. Antimony Redox Biotransformation in the Subsurface: Effect of Indigenous Sb(V) Respiring Microbiota.

    Science.gov (United States)

    Wang, Liying; Ye, Li; Yu, Yaqin; Jing, Chuanyong

    2018-02-06

    Anaerobic microbiological antimonate [Sb(V)] respiration is a newly discovered process regulating the Sb redox transformation in soils. However, little is known about the role microbiological Sb(V) respiration plays in the fate of Sb in the subsurface, especially in the presence of sulfate and electron shuttles. Herein, we successfully enriched a Sb(V) reducing microbiota (SbRM) from the subsurface near an active Sb mine. SbRM was dominated by genus Alkaliphilus (18-36%), Clostridiaceae (17-18%), Tissierella (24-27%), and Lysinibacillus (16-37%). The incubation results showed that SbRM reduced 88% of dissolved Sb(V) to Sb(III), but the total Sb mobility remained the same as in the abiotic control, indicating that SbRM alone did not increase the total Sb release but regulated the Sb speciation in the subsurface. Micro X-ray fluorescence (μ-XRF) analysis suggested the association of Sb and Fe, and electron shuttles such as anthraquinone-2,6-disulfonic disodium salt (AQDS) markedly enhanced the Sb release due to its ability to facilitate Fe mineral dissolution. Sb L-edge and S K-edge X-ray absorption near edge structure (XANES) results demonstrated that indigenous SbRM immobilized Sb via Sb 2 S 3 formation, especially in a sulfur-rich environment. The insights gained from this study shed new light on Sb mobilization and its risk assessment in the subsurface environment.

  4. Evaporation of tetramers in Sb4n clusters and conditions for the formation of Sb2n+1 clusters

    International Nuclear Information System (INIS)

    Rayane, D.; Tribollet, B.; Broyer, M.; Melinon, P.; Cabaud, B.; Hoareau, A.

    1989-01-01

    Antimony clusters are produced by the inert gas condensation technique. They are found to be built from Sb 4 units. The fragmentation by evaporation of Sb 4 units is studied as a function of the excess energy in the cluster. By this way the binding energy of the Sb 4 units in the cluster is found to be about 1.5 eV, well below the binding energy of a Sb atom in the bulk and in Sb 4 (≅3 eV). The evolution of ionization potentials of Sb 4n clusters confirms that their structure is probably non metallic. Finally the possible metastable character of this Sb 4n structure is discussed. (orig.)

  5. Sn buffered by shape memory effect of NiTi alloys as high-performance anodes for lithium ion batteries

    International Nuclear Information System (INIS)

    Hu Renzong; Zhu Min; Wang Hui; Liu Jiangwen; Liuzhang Ouyang; Zou Jin

    2012-01-01

    By applying the shape memory effect of the NiTi alloys to buffer the Sn anodes, we demonstrate a simple approach to overcome a long-standing challenge of Sn anode in the applications of Li-ion batteries – the capacity decay. By supporting the Sn anodes with NiTi shape memory alloys, the large volume change of Sn anodes due to lithiation and delithiation can be effectively accommodated, based on the stress-induced martensitic transformation and superelastic recovery of the NiTi matrix respectively, which leads to a decrease in the internal stress and closing of cracks in Sn anodes. Accordingly, stable cycleability (630 mA h g −1 after 100 cycles at 0.7C) and excellent high-rate capabilities (478 mA h g −1 at 6.7C) were attained with the NiTi/Sn/NiTi film electrode. These shape memory alloys can also combine with other high-capacity metallic anodes, such as Si, Sb, Al, and improve their cycle performance.

  6. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Energy Technology Data Exchange (ETDEWEB)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

    2016-12-15

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  7. Thermoelectrical properties of the compounds ScM{sup VIII}Sb and YM{sup VIII}Sb (M{sup VIII} = Ni, Pd, Pt)

    Energy Technology Data Exchange (ETDEWEB)

    Oestreich, J; Probst, U; Richardt, F; Bucher, E [University of Konstanz, PO Box X916, D-78457 Konstanz (Germany)

    2003-02-05

    The research into new materials with good thermoelectric properties has revealed new compounds consisting of metallic elements (Bando Y, Suemitsu T, Takagi K, Tokushima H, Echizen Y, Katoh K, Umeo K, Maeda Y and Takabatake T 2000 J. Alloys Compounds 313 1-6, Ghelani N, Loo S, Chung D, Sportouch S, Nardi S, Kanatzidis M, Hogan T and Nolas G 2000 Mater. Res. Soc. 626 Z8.6.1). The half-Heusler compound ZrNiSn, in particular, shows promising thermoelectric properties and has been studied by many scientists during recent years (Uher C, Hu S, Yang J, Meisner G P and Morelli D T 1997 Proc. ICT'97: 16th Int. Conf. on Thermoelectrics pp 485-8, Romaka L P, Stadnyk Yu V, Goryn A M, Gorelenko Yu K and Skolozdra R V 1997 Proc. ICT'97: 16th Int. Conf. on Thermoelectrics pp 516-19, Hohl H, Ramirez A P, Goldmann C, Ernst G, Woelfing B and Bucher E 1998 J. Phys.: Condens. Matter 11 1697-709, Oestreich J, Kaefer W, Richardt F, Probst U and Bucher E 1999 Proc. 5th European Workshop on Thermoelectrics pp 192-5). In an effort to find new thermoelectric materials, the half-Heusler compounds of the groups ScM{sup VIII}Sb and YM{sup VIII}Sb (M{sup VIII} = Ni, Pd, Pt) were synthesized by arc melting and the thermoelectric properties were examined by standard characterization methods. Doping experiments showed that it is possible to change the electrical properties of the compounds while retaining the half-Heusler structure. Within the two groups, YPtSb showed the best thermoelectrical properties. At a temperature of 400 K the electrical conductivity of YPtSb is 748{omega}{sup -1} cm{sup -1} and the Seebeck coefficient is 116.3{mu}V K{sup -1}. The thermal conductivity at 400 K extrapolated using the Wiedemann-Franz law is 2.87 W K{sup -1} m{sup -1}. This leads to a dimensionless figure of merit of 0.14.

  8. Synthesis and thermoelectric properties of Sb{sub 0.20}CoSb{sub 2.80} skutterudite

    Energy Technology Data Exchange (ETDEWEB)

    Figueirêdo, C.A., E-mail: camila_fig@hotmail.com [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Gallas, M.R. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Institute for Multiscale Simulations, Friedrich-Alexander-Universität, Nägelsbachstrasse 49b, 91052 Erlangen (Germany); Zorzi, J.E. [Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil); Perottoni, C.A. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil)

    2014-06-15

    Highlights: • A HP-HT Sb{sub 0.20}CoSb{sub 2.80} phase was prepared by processing cobalt antimonide at 7.7 GPa and 550 °C, for (at least) 5 min. • The mechanism of formation of this phase involves (i) decomposition of cobalt antimonide into CoSb{sub 2} and Sb, and (ii) insertion of Sb into the remaining cobalt antimonide. • The mechanism of formation is qualitatively different from that responsible for the formation of the high pressure (greater than 20 GPa) phase. - Abstract: Polycrystalline samples of cobalt antimonide (CoSb{sub 2.79}) were submitted to different conditions of pressure, temperature and processing time, in a high-pressure toroidal-type chamber, aiming to maximize the production of the high pressure phase previously observed in experiments with a diamond anvil cell. Rietveld refinements of X-ray powder diffraction data were performed to determine the phase composition and structural parameters. The maximum yield, 89(2) wt.% of Sb{sub x}CoSb{sub 3−x} phase, was obtained at 7.7 GPa, 550 °C and (at least) 5 min of processing time. The mechanism behind the formation of Sb{sub x}CoSb{sub 3−x} at high pressure and high temperature is actually not the same as that previously inferred from experiments at higher pressures (20 GPa) and room temperature with the diamond anvil cell. Indeed, evidences suggest that, at high pressure and high temperature, Sb{sub x}CoSb{sub 3−x} is formed by insertion of Sb resulting from decomposition of cobalt antimonide. Thermal conductivity, Seebeck coefficient and electrical conductivity were estimated for CoSb{sub 2.79} and Sb{sub 0.20}CoSb{sub 2.80}. The thermoelectric figure of merit at room temperature for Sb{sub 0.20}CoSb{sub 2.80} resulted 33% greater than that for CoSb{sub 2.79}.

  9. The SbMT-2 gene from a halophyte confers abiotic stress tolerance and modulates ROS scavenging in transgenic tobacco.

    Directory of Open Access Journals (Sweden)

    Amit Kumar Chaturvedi

    Full Text Available Heavy metals are common pollutants of the coastal saline area and Salicornia brachiata an extreme halophyte is frequently exposed to various abiotic stresses including heavy metals. The SbMT-2 gene was cloned and transformed to tobacco for the functional validation. Transgenic tobacco lines (L2, L4, L6 and L13 showed significantly enhanced salt (NaCl, osmotic (PEG and metals (Zn++, Cu++ and Cd++ tolerance compared to WT plants. Transgenic lines did not show any morphological variation and had enhanced growth parameters viz. shoot length, root length, fresh weight and dry weight. High seed germination percentage, chlorophyll content, relative water content, electrolytic leakage and membrane stability index confirmed that transgenic lines performed better under salt (NaCl, osmotic (PEG and metals (Zn++, Cu++ and Cd++ stress conditions compared to WT plants. Proline, H2O2 and lipid peroxidation (MDA analyses suggested the role of SbMT-2 in cellular homeostasis and H2O2 detoxification. Furthermore in vivo localization of H2O2 and O2-; and elevated expression of key antioxidant enzyme encoding genes, SOD, POD and APX evident the possible role of SbMT-2 in ROS scavenging/detoxification mechanism. Transgenic lines showed accumulation of Cu++ and Cd++ in root while Zn++ in stem under stress condition. Under control (unstressed condition, Zn++ was accumulated more in root but accumulation of Zn++ in stem under stress condition suggested that SbMT-2 may involve in the selective translocation of Zn++ from root to stem. This observation was further supported by the up-regulation of zinc transporter encoding genes NtZIP1 and NtHMA-A under metal ion stress condition. The study suggested that SbMT-2 modulates ROS scavenging and is a potential candidate to be used for phytoremediation and imparting stress tolerance.

  10. The SbMT-2 gene from a halophyte confers abiotic stress tolerance and modulates ROS scavenging in transgenic tobacco.

    Science.gov (United States)

    Chaturvedi, Amit Kumar; Patel, Manish Kumar; Mishra, Avinash; Tiwari, Vivekanand; Jha, Bhavanath

    2014-01-01

    Heavy metals are common pollutants of the coastal saline area and Salicornia brachiata an extreme halophyte is frequently exposed to various abiotic stresses including heavy metals. The SbMT-2 gene was cloned and transformed to tobacco for the functional validation. Transgenic tobacco lines (L2, L4, L6 and L13) showed significantly enhanced salt (NaCl), osmotic (PEG) and metals (Zn++, Cu++ and Cd++) tolerance compared to WT plants. Transgenic lines did not show any morphological variation and had enhanced growth parameters viz. shoot length, root length, fresh weight and dry weight. High seed germination percentage, chlorophyll content, relative water content, electrolytic leakage and membrane stability index confirmed that transgenic lines performed better under salt (NaCl), osmotic (PEG) and metals (Zn++, Cu++ and Cd++) stress conditions compared to WT plants. Proline, H2O2 and lipid peroxidation (MDA) analyses suggested the role of SbMT-2 in cellular homeostasis and H2O2 detoxification. Furthermore in vivo localization of H2O2 and O2-; and elevated expression of key antioxidant enzyme encoding genes, SOD, POD and APX evident the possible role of SbMT-2 in ROS scavenging/detoxification mechanism. Transgenic lines showed accumulation of Cu++ and Cd++ in root while Zn++ in stem under stress condition. Under control (unstressed) condition, Zn++ was accumulated more in root but accumulation of Zn++ in stem under stress condition suggested that SbMT-2 may involve in the selective translocation of Zn++ from root to stem. This observation was further supported by the up-regulation of zinc transporter encoding genes NtZIP1 and NtHMA-A under metal ion stress condition. The study suggested that SbMT-2 modulates ROS scavenging and is a potential candidate to be used for phytoremediation and imparting stress tolerance.

  11. Microbiological reduction of Sb(V) in anoxic freshwater sediments

    Science.gov (United States)

    Oremland, Ronald S.; Kulp, Thomas R.; Miller, Laurence G.; Braiotta, Franco; Webb, Samuel M.; Kocar, Benjamin D; Blum, Jodi S.

    2014-01-01

    Microbiological reduction of millimolar concentrations of Sb(V) to Sb(III) was observed in anoxic sediments from two freshwater settings: (1) a Sb- and As-contaminated mine site (Stibnite Mine) in central Idaho and 2) an uncontaminated suburban lake (Searsville Lake) in the San Francisco Bay Area. Rates of Sb(V) reduction in anoxic sediment microcosms and enrichment cultures were enhanced by amendment with lactate or acetate as electron donors but not by H2, and no reduction occurred in sterilized controls. Addition of 2-14C-acetate to Stibnite Mine microcosms resulted in the production of 14CO2 coupled to Sb(V) reduction, suggesting that this process proceeds by a dissimilatory respiratory pathway in those sediments. Antimony(V) reduction in Searsville Lake sediments was not coupled to acetate mineralization and may be associated with Sb-resistance. The microcosms and enrichment cultures also reduced sulfate, and the precipitation of insoluble Sb(III)-sulfide complexes was a major sink for reduced Sb. The reduction of Sb(V) by Stibnite Mine sediments was inhibited by As(V), suggesting that As(V) is a preferred electron acceptor for the indigenous community. These findings indicate a novel pathway for anaerobic microbiological respiration and suggest that communities capable of reducing high concentrations of Sb(V) commonly occur naturally in the environment.

  12. PROTEUS-SN User Manual

    Energy Technology Data Exchange (ETDEWEB)

    Shemon, Emily R. [Argonne National Lab. (ANL), Argonne, IL (United States); Smith, Micheal A. [Argonne National Lab. (ANL), Argonne, IL (United States); Lee, Changho [Argonne National Lab. (ANL), Argonne, IL (United States)

    2016-02-16

    PROTEUS-SN is a three-dimensional, highly scalable, high-fidelity neutron transport code developed at Argonne National Laboratory. The code is applicable to all spectrum reactor transport calculations, particularly those in which a high degree of fidelity is needed either to represent spatial detail or to resolve solution gradients. PROTEUS-SN solves the second order formulation of the transport equation using the continuous Galerkin finite element method in space, the discrete ordinates approximation in angle, and the multigroup approximation in energy. PROTEUS-SN’s parallel methodology permits the efficient decomposition of the problem by both space and angle, permitting large problems to run efficiently on hundreds of thousands of cores. PROTEUS-SN can also be used in serial or on smaller compute clusters (10’s to 100’s of cores) for smaller homogenized problems, although it is generally more computationally expensive than traditional homogenized methodology codes. PROTEUS-SN has been used to model partially homogenized systems, where regions of interest are represented explicitly and other regions are homogenized to reduce the problem size and required computational resources. PROTEUS-SN solves forward and adjoint eigenvalue problems and permits both neutron upscattering and downscattering. An adiabatic kinetics option has recently been included for performing simple time-dependent calculations in addition to standard steady state calculations. PROTEUS-SN handles void and reflective boundary conditions. Multigroup cross sections can be generated externally using the MC2-3 fast reactor multigroup cross section generation code or internally using the cross section application programming interface (API) which can treat the subgroup or resonance table libraries. PROTEUS-SN is written in Fortran 90 and also includes C preprocessor definitions. The code links against the PETSc, METIS, HDF5, and MPICH libraries. It optionally links against the MOAB library and

  13. Transport Measurements on Si Nanostructures with Counted Sb Donors

    Science.gov (United States)

    Singh, Meenakshi; Bielejec, Edward; Garratt, Elias; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

    2014-03-01

    Donor based spin qubits are a promising platform for quantum computing. Single qubits using timed implant of donors have been demonstrated.1 Extending this to multiple qubits requires precise control over the placement and number of donors. Such control can be achieved by using a combination of low-energy heavy-ion implants (to reduce depth straggle), electron-beam lithography (to define position), focused ion beam (to localize implants to one lithographic site) and counting the number of implants with a single ion detector.2 We report transport measurements on MOS quantum dots implanted with 5, 10 and 20 Sb donors using the approach described above. A donor charge transition is identified by a charge offset in the transport characteristics. Correlation between the number of donors and the charge offsets is studied. These results are necessary first steps towards fabricating donor nanostructures for two qubit interactions. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. 1J. J. Pla et al., Nature 496, 334 (2013) 2J. A. Seamons et al., APL 93, 043124 (2008).

  14. Transition probabilities for lines of Cr II, Na II and Sb I by laser produced plasma atomic emission spectroscopy; Probabilidades de transicion de algunos niveles de Cr II, Na II y Sb I medediante espectroscopia de plasma producidos por laser

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, A. M.; Ortiz, M.; Campos, J.

    1995-07-01

    Absolute transition probabilities for lines of CR II, Na II and Sb I were determined by emission spectroscopy of laser induced plasmas. the plasma was produced focusing the emission of a pulsed Nd-Yag laser on solid samples containing the atom in study. the light arising from the plasma region was collected by and spectrometer. the detector used was a time-resolved optical multichannel analyzer (OMA III EG and G). The wavelengths of the measured transitions range from 2000 sto 4100 A. The spectral resolution of the system was 0. 2 A. The method can be used in insulators materials as Cl Na crystals and in metallic samples as Al-Cr and Sn-Sn alloys. to avoid self-absorption effects the alloys were made with low Sb or Cr content. Relative transition probabilities have been determined from measurements of emission-line intensities and were placed on an absolute scale by using, where possible, accurate experimental lifetime values form the literature or theoretical data. From these measurements, values for plasma temperature (8000-24000 K), electron densities ({approx}{approx} 10''16 cm ''-3) and self-absorption coefficients have been obtained. (Author) 56 refs.

  15. Quantum oscillation evidence for a topological semimetal phase in ZrSnTe

    Science.gov (United States)

    Hu, Jin; Zhu, Yanglin; Gui, Xin; Graf, David; Tang, Zhijie; Xie, Weiwei; Mao, Zhiqiang

    2018-04-01

    The layered WHM-type (W =Zr /Hf /La , H =Si /Ge /Sn /Sb , M =S /Se /Te ) materials represent a large family of topological semimetals, which provides an excellent platform to study the evolution of topological semimetal state with the fine tuning of spin-orbit coupling and structural dimensionality for various combinations of W , H , and M elements. In this work, through high field de Haas-van Alphen (dHvA) quantum oscillation studies, we have found evidence for the predicted topological nontrivial bands in ZrSnTe. Furthermore, from the angular dependence of quantum oscillation frequency, we have revealed the three-dimensional Fermi surface topologies of this layered material owing to strong interlayer coupling.

  16. DWPF Simulant CPC Studies For SB8

    Energy Technology Data Exchange (ETDEWEB)

    Newell, J. D.

    2013-09-25

    Prior to processing a Sludge Batch (SB) in the Defense Waste Processing Facility (DWPF), flowsheet studies using simulants are performed. Typically, the flowsheet studies are conducted based on projected composition(s). The results from the flowsheet testing are used to 1) guide decisions during sludge batch preparation, 2) serve as a preliminary evaluation of potential processing issues, and 3) provide a basis to support the Shielded Cells qualification runs performed at the Savannah River National Laboratory (SRNL). SB8 was initially projected to be a combination of the Tank 40 heel (Sludge Batch 7b), Tank 13, Tank 12, and the Tank 51 heel. In order to accelerate preparation of SB8, the decision was made to delay the oxalate-rich material from Tank 12 to a future sludge batch. SB8 simulant studies without Tank 12 were reported in a separate report.1 The data presented in this report will be useful when processing future sludge batches containing Tank 12. The wash endpoint target for SB8 was set at a significantly higher sodium concentration to allow acceptable glass compositions at the targeted waste loading. Four non-coupled tests were conducted using simulant representing Tank 40 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry (146% acid) SRAT testing up to 31% of the DWPF hydrogen limit. SME hydrogen generation reached 48% of of the DWPF limit for the high acid run. Two non-coupled tests were conducted using simulant representing Tank 51 at 110-146% of the Koopman Minimum Acid requirement. Hydrogen was generated during high acid stoichiometry SRAT testing up to 16% of the DWPF limit. SME hydrogen generation reached 49% of the DWPF limit for hydrogen in the SME for the high acid run. Simulant processing was successful using previously established antifoam addition strategy. Foaming during formic acid addition was not observed in any of the runs. Nitrite was destroyed in all runs and no N2O was detected

  17. Heavy flavours

    CERN Document Server

    Buras, Andrzej J

    1998-01-01

    This volume is a collection of review articles on the most outstanding topics in heavy flavour physics. All the authors have made significant contributions to this field. The book reviews in detail the theoretical structure of heavy flavour physics and confronts the Standard Model and some of its extensions with existing experimental data.This new edition covers new trends and ideas and includes the latest experimental information. Compared to the previous edition interesting new activities are included and some of the key contributions are updated. Particular attention is paid to the discover

  18. New ternary superconductors of the YPd2Sn-type

    International Nuclear Information System (INIS)

    Ishikawa, M.; Jorda, J.L.; Junod, A.

    1982-01-01

    From the specific heat and electrical resistivity experiments on several new superconducting Heusler compounds of the YPd 2 Sn-type, it is concluded that these compounds are strong-coupling superconductors with d-character. Most of the compounds with the heavy rare earths substituted for Y order magnetically at a relatively low temperature (< or approx. 5 K) and the compounds of Tm, Yb and Lu exhibit superconductivity below about 3 K. A possible coexistence of superconductivity and magnetism in these compounds is discussed. (orig.)

  19. Sb{sup III} - Sb{sup V} Exchange Reaction in Hydrochloric: Acid Solutions; Echange Sb{sup III}-Sb{sup V} dans des Solutions d'Acide Chlorhydrique; Reaktsiya obmena Sb(III) - Sb(V) v rastvorakh khloristovodorodnoj kisloty; Intercambio Sb{sup III}-Sb{sup V} en Soluciones de HCl

    Energy Technology Data Exchange (ETDEWEB)

    Kambara, T.; Yamaguchi, K.; Yasuba, S. [Shizuoka University, Shizuoka City (Japan)

    1965-10-15

    The exchange reaction of Sb{sup III} - Sb{sup V} in solutions of low HCl concentrations was studied using {sup 124}Sb as a tracer. The effects of HCl concentrations and chemical forms of antimony on the exchange rate were investigated. The HCl concentrations of the antimony solutions ((Sb{sup III}) =(Sb{sup V}) = 6.8 x 10{sup -4}M) were changed from 0.8 to 4.0M and the half-time for the exchange was measured by plotting log (1 - F) versus time t to calculate the exchange rate assuming the second-ordet reaction. It was found that the exchange rate was sharply increased with the increase of HCl concentrations (at 25 Degree-Sign C, from 0.8 to 2.0M) and at 2.0M HCl concentration the rate reached the maximum, from which the rate was decreased with the increase of HCl concentrations (at 25 Degree-Sign C, from 2.0 to 4.0M). Two sorts of Sb{sup V} species were used for our investigations, i.e. one was used directly after the dilution of 10M HCl Sb{sup V} solution with water and the other was used after 24 hours standing at room temperature from the dilution. (The Sb{sup III} species were also kept standing after preparation from 10M HCl Sb{sup III} solution.) In both cases the maximum rates were found to exist at 2.0M HCl concentration. The rate R{sub 1} for the former (directly after dilution) was 4.5 x 10{sup -6} mole litre{sup -1} min{sup -1} and the rate R{sub 2} for the latter (24 hours standing) was 1.2 x 10{sup -}{sub 6} mole litre. Also the activation energy for these cases was found to be 12.2 kcal/mole and 19.1 kcal/mole. By spectrophotometric studies, the Sb{sup V} species of the former type were found to be mainly consisting of SbCl{sup -}{sub 6} and the species of the latter type to be of SbCl{sub 4}(OH){sup -}{sub 2}, etc. Besides these facts the form of Sb{sup III} species was found to have no influence on the exchange rate. A much sharper increase of the exchange rate was observed when the HCl concentration of the antimony solution was fixed at 0.8M and

  20. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  1. Electronic structure and high pressure phase transition in LaSb and CeSb

    International Nuclear Information System (INIS)

    Mathi Jaya, S.; Sanyal, S.P.

    1992-09-01

    The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

  2. (In)GaSb/AlGaSb quantum wells grown on Si substrates

    International Nuclear Information System (INIS)

    Akahane, Kouichi; Yamamoto, Naokatsu; Gozu, Shin-ichiro; Ueta, Akio; Ohtani, Naoki

    2007-01-01

    We have successfully grown GaSb and InGaSb quantum wells (QW) on a Si(001) substrate, and evaluated their optical properties using photoluminescence (PL). The PL emissions from the QWs at room temperature were observed at around 1.55 μm, which is suitable for fiber optic communications systems. The measured ground state energy of each QW matched well with the theoretical value calculated by solving the Schroedinger equation for a finite potential QW. The temperature dependence of the PL intensity showed large activation energy (∼ 77.6 meV) from QW. The results indicated that the fabricated QW structure had a high crystalline quality, and the GaSb QW on Si for optical devices operating at temperatures higher than room temperature will be expected

  3. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  4. Electrodeposition and electrochemical characterisation of thick and thin coatings of Sb and Sb/Sb2O3 particles for Li-ion battery anodes

    International Nuclear Information System (INIS)

    Bryngelsson, Hanna; Eskhult, Jonas; Edstroem, Kristina; Nyholm, Leif

    2007-01-01

    The possibilities to electrodeposit thick coatings composed of nanoparticles of Sb and Sb 2 O 3 for use as high-capacity anode materials in Li-ion batteries have been investigated. It is demonstrated that the stability of the coatings depends on their Sb 2 O 3 concentrations as well as microstructure. The electrodeposition reactions in electrolytes with different pH and buffer capacities were studied using chronopotentiometry and electrochemical quartz crystal microbalance measurements. The obtained deposits, which were characterised with XRD and SEM, were also tested as anode materials in Li-ion batteries. The influence of the pH and buffer capacity of the deposition solution on the composition and particle size of the deposits were studied and it is concluded that depositions from a poorly buffered solution of antimony-tartrate give rise to good anode materials due to the inclusion of precipitated Sb 2 O 3 nanoparticles in the Sb coatings. Depositions under conditions yielding pure Sb coatings give rise to deposits composed of large crystalline particles with poor anode stabilities. The presence of a plateau at about 0.8 V versus Li + /Li due to SEI forming reactions and the origin of another plateau at about 0.4 V versus Li + /Li seen during the lithiation of thin Sb coatings are also discussed. It is demonstrated that the 0.4 V plateau is present for Sb coatings for which the (0 1 2) peak is the main peak in the XRD diffractogram

  5. Transition probabilities for lines of Cr II, Na II and Sb I by laser produced plasma atomic emission spectroscopy

    International Nuclear Information System (INIS)

    Gonzalez, A. M.; Ortiz, M.; Campos, J.

    1995-01-01

    Absolute transition probabilities for lines of CR II, Na II and Sb I were determined by emission spectroscopy of laser induced plasmas. the plasma was produced focusing the emission of a pulsed Nd-Yag laser on solid samples containing the atom in study. the light arising from the plasma region was collected by and spectrometer. the detector used was a time-resolved optical multichannel analyzer (OMA III EG and G). The wavelengths of the measured transitions range from 2000 sto 4100 A. The spectral resolution of the system was 0. 2 A. The method can be used in insulators materials as Cl Na crystals and in metallic samples as Al-Cr and Sn-Sn alloys. to avoid self-absorption effects the alloys were made with low Sb or Cr content. Relative transition probabilities have been determined from measurements of emission-line intensities and were placed on an absolute scale by using, where possible, accurate experimental lifetime values form the literature or theoretical data. From these measurements, values for plasma temperature (8000-24000 K), electron densities (∼∼ 10''16 cm ''-3) and self-absorption coefficients have been obtained. (Author) 56 refs

  6. Nuclear research with heavy ions

    International Nuclear Information System (INIS)

    Kaplan, M.

    1991-08-01

    This report discusses the following topics: Asymmetric fission of 149 Tb* from the finite-range, rotating-liquid-drop model: mean total kinetic energies for binary fragmentation; charged-particle evaporation from hot composite nuclei: evidence over a broad Z range for distortions from cold nuclear profiles; the role of reversed kinematics and double kinematic solutions in nuclear reactions studies; production of intermediate-mass-fragments in the reaction 98 Mo + 51 V at an excitation energy E* = 224-MeV; emission of light charged particles in the reaction 344-MeV 28 Si + 121 Sb; continued developments of the statistical evaporation code LILITA N90; and planning for heavy-ion-collision studies at very high energies: the STAR collaboration at RHIC

  7. Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

    International Nuclear Information System (INIS)

    Aliev, Z.S.; Musaeva, S.S.; Babanly, D.M.; Shevelkov, A.V.; Babanly, M.B.

    2010-01-01

    The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb 2 Se 3 -SbI 3 , Sb-SbSeI, SbI 3 -Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony (ΔG-bar, ΔH-bar, ΔS-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: ΔG f,298 0 =-80.12±1.81kJ/mol; ΔH f,298 0 =-77.3±1.8kJ/mol; S 298 0 =155.2±9.5J/(molK).

  8. Phase diagram of the Sb-Se-I system and thermodynamic properties of SbSeI

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Z S; Musaeva, S S; Babanly, D M [Baku State University, General and Inorganic Chemistry Department (Azerbaijan); Shevelkov, A.V., E-mail: shev@inorg.chem.msu.r [Moscow Lomonosov State University, Chemistry Department (Russian Federation); Babanly, M.B., E-mail: Babanly_mb@rambler.r [Baku State University, General and Inorganic Chemistry Department (Azerbaijan)

    2010-09-03

    The Sb-Se-I system was investigated by using the DTA and XRD analyses and EMF measurements with an antimony electrode. The T-x diagram of the binary Sb-I system was accurately redefined. A number of polythermal sections and the projection of the liquidus surface were constructed. The fields of the primary crystallization, as well as the types and coordinates of non- and monovariant equilibria were determined. It is shown that the quasi-binary sections Sb{sub 2}Se{sub 3}-SbI{sub 3}, Sb-SbSeI, SbI{sub 3}-Se, and SbSeI-Se triangulate the Sb-Se-I system, leading to five independent subsystems. A broad area of immiscibility, that overlaps a certain part of the antimony primary crystallization field, was found. From the EMF measurements, the partial molar functions of antimony ({Delta}G-bar, {Delta}H-bar, {Delta}S-bar) as well as standard integral thermodynamic functions of SbSeI were calculated. The latter were found to have the following values: {Delta}G{sub f,298}{sup 0}=-80.12{+-}1.81kJ/mol; {Delta}H{sub f,298}{sup 0}=-77.3{+-}1.8kJ/mol; S{sub 298}{sup 0}=155.2{+-}9.5J/(molK).

  9. Removal of Sb(III and Sb(V by Ferric Chloride Coagulation: Implications of Fe Solubility

    Directory of Open Access Journals (Sweden)

    Muhammad Ali Inam

    2018-04-01

    Full Text Available Coagulation and precipitation appear to be the most efficient and economical methods for the removal of antimony from aqueous solution. In this study, antimony removal from synthetic water and Fe solubility with ferric chloride (FC coagulation has been investigated. The effects of pH, FC dosage, initial antimony loading and mixed Sb(III, Sb(V proportions on Fe solubility and antimony removal were studied. The results showed that the Sb(III removal efficiency increased with the increase of solution pH particularly due to an increase in Fe precipitation. The Sb(V removal was influenced by the solution pH due to a change in Fe solubility. However, the Fe solubility was only impaired by the Sb(III species at optimum pH 7. The removal efficiencies of both Sb species were enhanced with an increase in FC dose. The quantitative analysis of the isotherm study revealed the strong adsorption potential of Sb(III on Fe precipitates as compared to Sb(V. Furthermore, the removal behavior of antimony was inhibited in mixed proportion with high Sb(V fraction. In conclusion, this study contributes to better understanding the fate of Sb species, their mobilities, and comparative removal behavior, with implications for Fe solubility using ferric chloride in different aqueous environments.

  10. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Science.gov (United States)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

    2016-12-01

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  11. Enhancement of the catalytic activity of Pt nanoparticles toward methanol electro-oxidation using doped-SnO2 supporting materials

    Science.gov (United States)

    Merati, Zohreh; Basiri Parsa, Jalal

    2018-03-01

    Catalyst supports play important role in governing overall catalyst activity and durability. In this study metal oxides (SnO2, Sb and Nb doped SnO2) were electrochemically deposited on titanium substrate (Ti) as a new support material for Pt catalyst in order to electro-oxidation of methanol. Afterward platinum nanoparticles were deposited on metal oxide film via electro reduction of platinum salt in an acidic solution. The surface morphology of modified electrodes were evaluated by field-emission scanning electron microscopy (FESEM) and energy dispersive X-ray analysis (EDX) techniques. The electro-catalytic activities of prepared electrodes for methanol oxidation reaction (MOR) and oxidation of carbon monoxide (CO) absorbed on Pt was considered with cyclic voltammetry. The results showed high catalytic activity for Pt/Nb-SnO2/Ti electrode. The electrochemical surface area (ECSA) of a platinum electro-catalyst was determined by hydrogen adsorption. Pt/Nb-SnO2/Ti electrode has highest ECSA compared to other electrode resulting in high activity toward methanol electro-oxidation and CO stripping experiments. The doping of SnO2 with Sb and Nb improved ECSA and MOR activity, which act as electronic donors to increase electronic conductivity.

  12. An in situ FTIR spectroscopic and thermogravimetric analysis study of the dehydration and dihydroxylation of SnO2: the contribution of the (100), (110) and (111) facets.

    Science.gov (United States)

    Christensen, P A; Attidekou, P S; Egdell, R G; Maneelok, S; Manning, D A C

    2016-08-17

    Nanoparticulate SnO2 produced by a hydrothermal method was characterised by BET, XRD, TGA-MS and in situ variable temperature diffuse reflectance infra red spectroscopy (DRIFTS) to determine the surface behaviour of water. For the (100) facets, hydrogen bonding does not occur, and water adsorption is less strong than for the (111) and (110) facets where hydrogen bonding does occur. Reversible uptake of oxygen was observed. These findings have implications for other surface-gas reactions in which Ni and Sb co-doped SnO2 (NATO) anodes are used for ozone generation. BET showed the relatively high surface area and nanometer scale of the SnO2 particles, whilst XRD confirmed the nano dimension of the crystallites and showed only the cassiterite phase. TGA analysis indicated four temperature regions over which mass loss was observed. These and the in situ DRIFTS studies revealed the existence of various forms of water associated with specific crystal facets of the SnO2, as well as the existence of isolated O-H groups and adsorbed oxygen species. Electronic absorptions were also observed and the data rationalised in terms of the existence of both free electron absorptions, and absorptions from oxygen vacancy states. The role of adsorbed molecular oxygen in electrochemical ozone generation at Ni and Sb co-doped SnO2 (NATO) anodes was strongly suggested by this work.

  13. Sn whiskers removed by energy photo flashing

    International Nuclear Information System (INIS)

    Jiang, N.; Yang, M.; Novak, J.; Igor, P.; Osterman, M.

    2012-01-01

    Highlights: ► Sn whiskers were sintered by intense light flashing (Photosintering). ► Photosintering can effectively eliminate Sn whiskers. ► Photosintering would not damage electronic devices. ► Photosintering is a very promising approach to improve Sn-based electronic surface termination. - Abstract: Sn whiskers have been known to be the major issue resulting in electronic circuit shorts. In this study, we present a novel energy photo flashing approach (photosintering) to shorten and eliminate Sn whiskers. It has been found that photosintering is very effective to modify and remove Sn whiskers; only a sub-millisecond duration photosintering can amazingly get rid of over 90 vol.% of Sn whiskers. Moreover, this photosintering approach has also been proved to cause no damages to electronic devices, suggesting it is a potentially promising way to improve Sn-based electronic surface termination.

  14. Heavy quarks

    International Nuclear Information System (INIS)

    Khoze, V.A.

    1983-10-01

    We discuss the results accumulated during the last five years in heavy quark physics and try to draw a simple general picture of the present situation. The survey is based on a unified point of view resulting from quantum chromodynamics. (orig.)

  15. La5Zn2Sn

    Directory of Open Access Journals (Sweden)

    Igor Oshchapovsky

    2011-11-01

    Full Text Available A single crystal of pentalanthanum dizinc stannide, La5Zn2Sn, was obtained from the elements in a resistance furnace. It belongs to the Mo5SiB2 structure type, which is a ternary ordered variant of the Cr5B3 structure type. The space is filled by bicapped tetragonal antiprisms from lanthanum atoms around tin atoms sharing their vertices. Zinc atoms fill voids between these bicapped tetragonal antiprisms. All four atoms in the asymmetric unit reside on special positions with the following site symmetries: La1 (..m; La2 (4/m..; Zn (m.2m; Sn (422.

  16. Ordered CoSn-type ternary phases in Co3Sn3-xGex

    DEFF Research Database (Denmark)

    Allred, Jared M.; Jia, Shuang; Bremholm, Martin

    2012-01-01

    . By taking advantage of the chemical differences between the two crystallographically inequivalent Sn sites in the structure, we observe ordered ternary phases, nominally Co3SnGe2 and Co3Sn2Ge. The electron count and unit cell configuration remain unchanged from CoSn; these observations thus help to clarify...

  17. Fabrication of textured SnO2 transparent conductive films using self-assembled Sn nanospheres

    Science.gov (United States)

    Fukumoto, Michitaka; Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2018-06-01

    We present a novel method to fabricate textured surfaces on transparent conductive SnO2 films by processing substrates through a bottom-up technique with potential for industrially scalable production. The substrate processing consists of three steps: deposition of precursor Sn films on glass substrates, formation of a self-assembled Sn nanosphere layer with reductive annealing, and conversion of Sn to SnO2 by oxidative annealing. Ta-doped SnO2 films conformally deposited on the self-assembled nanospherical SnO2 templates exhibited attractive optical and electrical properties, namely, enhanced haze values and low sheet resistances, for applications as transparent electrodes in photovoltaics.

  18. Transition probabilities for lines of Cr II, Na II and Sb I by laser produced plasma atomic emission spectroscopy

    International Nuclear Information System (INIS)

    Gonzalez, A.M.; Ortiz, M.; Campos, J.

    1995-09-01

    Absolute transition probabilities for lines of Cr II, Na II and Sb I were determined by emission spectroscopy of laser induced plasmas. The plasma was produced focusing the emission of a pulsed Nd-Yag laser on solid samples containing the atom in study. The light arising from the plasma region was collected by and spectrometer. the detector used was a time-resolved optical multichannel analyzer (OMA III EG and G). The wavelengths of the measured transitions range from 2000 to 4100 A. The spectral resolution of the system was 0.2 A. The method can be used in insulators materials as Cl Na crystals and in metallic samples as Al-Cr and Sn-Sb alloys. To avoid self-absorption effects the alloys were made with low Sb or Cr content. Relative transition probabilities have been determined from measurements of emission-line intensities and were placed on an absolute scale by using, where possible, accurate experimental lifetime values form the literature or theoretical data. From these measurements, values for plasma temperature (8000-24000K), electron densities (approx 10 ''16 cm''-3) and self-absorption coefficients have been obtained

  19. The system Sb2Te3-InS

    International Nuclear Information System (INIS)

    Safarov, M.G.; Gamidov, R.S.; Poladov, P.M.

    1991-01-01

    The system Sb 2 Te 3 -InS was investigated by the methods of physicochemical analysis. Its state diagram was constructed. It represents the stable diagonal of the mutual ternary system InTe-Sb 2 Te 3 -Sb 2 S 3 -InS. It was established that limited regions of α- and β-solid solutions on the basis of Sb 2 Te 3 and InS, achieving 15.5 and 8 mol.% respectively, formed in the system. Lattice periods of α- and β-solid solutions, their lattice volumes, number of atoms in them and densities were calculated

  20. Heavy flavours: theory summary

    OpenAIRE

    Corcella, Gennaro

    2005-01-01

    I summarize the theory talks given in the Heavy Flavours Working Group. In particular, I discuss heavy-flavour parton distribution functions, threshold resummation for heavy-quark production, progress in fragmentation functions, quarkonium production, heavy-meson hadroproduction.

  1. Identification of new nuclei at and beyond the proton drip-line near the doubly-magic nucleus {sup 100}Sn

    Energy Technology Data Exchange (ETDEWEB)

    Anne, R; Auger, G; Bazin, D; Corre, J M; Hue, R; Lewitowicz, M; Saint-Laurent, M G [Grand Accelerateur National d` Ions Lourds (GANIL), 14 - Caen (France); Rykaczewski, K; Grzywacz, R [Warsaw Univ. (Poland). Inst. Fizyki Doswiadczalnej; [Grand Accelerateur National d` Ions Lourds (GANIL), 14 - Caen (France); Pfuetzner, M; Zylicz, J [Warsaw Univ. (Poland). Inst. Fizyki Doswiadczalnej; Borcea, C [Institute of Atomic Physics, Bucharest (Romania); Borrel, V; Guillemaud-Mueller, D; Mueller, A C; Pougheon, F; Sorlin, O [Paris-11 Univ., 91 - Orsay (France). Inst. de Physique Nucleaire; Doerfler, T; Schmidt-Ott, W D [Goettingen Univ. (Germany); Fomichov, A; Penionzhkevich, Y [Joint Inst. for Nuclear Research, Dubna (Russian Federation); Lukyanov, S; Tarasov, O [Joint Inst. for Nuclear Research, Dubna (Russian Federation); [Grand Accelerateur National d` Ions Lourds (GANIL), 14 - Caen (France); Huyse, M; Szerypo, J; Wauters, J [Louvain Univ. (Belgium). Inst. for Nuclear- and Radiationphysics; Janas, Z; Keller, H; Schmidt, K [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)

    1994-12-31

    The new neutron-deficient nuclei {sup 103}Sb, {sup 104}Sb, {sup 98}In, {sup 91}Pd, {sup 89}Rh and {sup 87}Ru have been identified among the quasi-fragmentation products of a {sup 112}Sn beam (63 MeV/nucleon). The fragment identification based on energy-loss, total kinetic energy and time-of-flight measurements has been independently confirmed via observation of {gamma}-radiation following the decay of known short-lived isomers. The region of known isotopes is extended to the predicted proton drip-line for indium and silver, and beyond it for antimony and rhodium. Tentative evidence for the existence of {sup 105}Te, {sup 99}Sn and {sup 93}Ag is also presented. (authors). 28 refs., 2 figs.

  2. Optical response of confined excitons in GaInAsSb/GaSb Quantum Dots heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Cano, R [Departamento de Fisica, Universidad Autonoma de Occidente, A.A. 2790, Cali (Colombia); Tirado-Mejia, L; Fonthal, G; Ariza-Calderon, H [Laboratorio de Optoelectronica, Universidad del Quindio, A.A. 4603 Armenia (Colombia); Porras-Montenegro, N, E-mail: rsanchez40@gmail.co [Departamento de Fisica, Universidad del Valle, A.A. 25360, Cali (Colombia)

    2009-05-01

    The narrow-gap Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y} compounds are suitable materials for heterostructure devices operating in the infrared wavelength range. In these compounds grown by liquid phase epitaxy over GaSb single crystals, for x and y values in the range of 0.10 to 0.14 for both variables, the photoluminescence optical response at 12K is blue-shifted by 20 meV related to the photoreflectance response. We believe this behavior is due to possible higher electronic confinement in some places of the heterostructure, possibly formed in the interface during the growth process. In order to explain this behavior, in this work we study the exciton recombination energy in spherical Quantum Dots (QDs) on Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaSb, using the variational procedure within the effective-mass approximation and considering an electron in a Type I band alignment formed by two semiconductors with similar parabolic conduction bands. Our results are in good agreement with recent experimental results.

  3. Magnetic behaviour of cerium in Ce2 Sn5 and Ce3 Sn7, surstructures of Ce Sn3

    International Nuclear Information System (INIS)

    Stunault, A.

    1988-07-01

    The compound studied, Ce 2 Sn 5 and Ce 3 Sn 7 are both orthorhombic, surstructure of cubic Ce Sn 3 . Magnetic susceptibility measurements show in both compounds an antiferromagnetic order at low temperature and magnetization shows a high anisotropy. Magnetization densities are determined by polarized neutron diffraction. The cerium site which has two Ce atoms as nearest neighbourgs carries all the magnetism in both structures. For Ce 2 Sn 5 moments are directed as the high magnetization axis and structure is modulated. Ce 3 Sn 7 presents a simple antiferromagnetic order but moment are directed as low magnetization axis. Various transitions towards a ferromagnetic order are presented. Results are interpreted by measuring the difference between energy levels of crystalline field. A model of crystalline field and isotrope exchange agrees well with Ce 3 Sn 7 , but for Ce 2 Sn 7 it is necessary to reduce the magnetic moment which is typical of the Kondo effect [fr

  4. Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

    International Nuclear Information System (INIS)

    Jeong, Jeung-hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Wu Zhe; Cheong, Byung-ki; Kim, Seul Cham; Oh, Kyu Hwan

    2009-01-01

    A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb : Te ∼2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.

  5. Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

    Science.gov (United States)

    Lehner, Ch. A.; Tschirky, T.; Ihn, T.; Dietsche, W.; Keller, J.; Fält, S.; Wegscheider, W.

    2018-05-01

    We present molecular beam epitaxial grown single- and double-side δ -doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm2/Vs at cryogenic temperatures and 58 000 cm2/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well-pronounced Shubnikov-de Haas oscillations reveals a high spin-orbit coupling with an effective g -factor of -38.4 in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

  6. Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition

    Science.gov (United States)

    Luo, Caiqin; Ho, Lok-Ping; Azad, Fahad; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kuznetsov, Andrej; Zhu, Hai; Su, Shichen; Ling, Francis Chi-Chung

    2018-04-01

    Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ˜8 × 1020 cm-3, the as-grown films grown with an appropriate oxygen pressure could be n˜4 × 1020 cm-3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.

  7. The UKB prescription and the heavy atom effects on the nuclear magnetic shielding of vicinal heavy atoms.

    Science.gov (United States)

    Maldonado, Alejandro F; Aucar, Gustavo A

    2009-07-21

    Fully relativistic calculations of NMR magnetic shielding on XYH3 (X = C, Si, Ge and Sn; Y = Br, I), XHn (n = 1-4) molecular systems and noble gases performed with a fully relativistic polarization propagator formalism at the RPA level of approach are presented. The rate of convergence (size of basis set and time involved) for calculations with both kinetic balance prescriptions, RKB and UKB, were investigated. Calculations with UKB makes it feasible to obtain reliable results for two or more heavy-atom-containing molecules. For such XYH3 systems, the influence of heavy vicinal halogen atoms on sigma(X) is such that heavy atom effects on heavy atoms (vicinal plus their own effects or HAVHA + HAHA effects) amount to 30.50% for X = Sn and Y = I; being the HAHA effect of the order of 25%. So the vicinal effect alone is of the order of 5.5%. The vicinal heavy atom effect on light atoms (HALA effect) is of the order of 28% for X = C and Y = I. A similar behaviour, but of opposite sign, is observed for sigma(Y) for which sigmaR-NR (I; X = C) (HAHA effect) is around 27% and sigmaR-NR(I; X = Sn) (HAVHA + HAHA effects) is close to 21%. Its electronic origin is paramagnetic for halogen atoms but both dia- and paramagnetic for central atoms. The effect on two bond distant hydrogen atoms is such that the largest variation of sigma(H) within the same family of XYH3 molecules appears for X = Si and Y = I: around 20%. In this case sigma(H; X = Sn, Y = I) = 33.45 ppm and sigma(H; X = Sn, Y = H) = 27.82 ppm.

  8. Heavy weights

    International Nuclear Information System (INIS)

    2001-01-01

    The paper mentions the important thing that it was for the country, exporting the first shipping of crude de Castilla to a company of asphalts in United States. It was not a common sale, as those that it carries out the company with the crude of Cusiana or Cano Limon. The new of this shipping is that it was the first successful test of marketing the Colombian heavy crude in the exterior, since previously it was almost considered a curse to find heavy crude by the difficulties of its transport. Today it can be taken to any refinery of the world and the best test is that, after almost a year of efforts to overcome the barriers of the transport, the company achieved its conduction from the Castilla Field, in proximities to Villavicencio, until the Covenas Port, in the Caribbean Colombian coast

  9. Fission properties of very heavy actinides

    International Nuclear Information System (INIS)

    Hoffman, D.C.

    1979-01-01

    The existing data on neutron-emission, kinetic-energy and mass distributions, and half-lives for spontaneous fission of the heavy actinides are reviewed. A comparison of the data for the Fm isotopes with heavier and lighter nuclides suggests that the properties of the heavy Fm isotopes may be unique and can qualitatively be explained on the basis of fragment shell effects, i.e., symmetric fission results in two fragments with configurations close to the doubly magic 132 Sn nucleus. The effect of excitation energy and the use of systematics and theoretical predictions of fission properties and half-lives in the identification of new heavy element isotopes is discussed. 54 references

  10. Heavy ions

    CERN Multimedia

    CERN. Geneva; Antinori, Federico

    2001-01-01

    Colliding two heavy nuclei at ultrarelativistic energies allows to create in the laboratory a bulk system with huge density, pressure and temperature and to study its properties. It is estimated that in Pb-Pb collisions at CERN-SPS we reach over an appreciable volume an energy density which exceeds by more than a factor 20 that of normal nuclear matter. At such densities, the hadrons are so closely packed that they interpenetrate; novel physics phenomena are expected to appear. QCD predicts that under such conditions a phase transition from a system composed of colourless hadrons to a Quark-Gluon Plasma (QGP) should occur. A rich ultrarelativistic heavy-ion physics programme is under way both at BNL-AGS and at CERN-SPS since 1986. The results obtained so far have led CERN to officially announce evidence for a new state of matter last year. A long-range programme of heavy-ion physics at higher energies is under way (BNL-RHIC) and in preparation (CERN-LHC). These lectures are meant as an introduction to the phy...

  11. Heavy ions

    CERN Multimedia

    CERN. Geneva. Audiovisual Unit

    2002-01-01

    Colliding two heavy nuclei at ultrarelativistic energies allows to create in the laboratory a bulk system with huge density, pressure and temperature and to study its properties. It is estimated that in Pb-Pb collisions at CERN-SPS we reach over an appreciable volume an energy density which exceeds by more than a factor 20 that of normal nuclear matter. At such densities, the hadrons are so closely packed that they interpenetrate; novel physics phenomena are expected to appear. QCD predicts that under such conditions a phase transition from a system composed of colourless hadrons to a Quark-Gluon Plasma (QGP) should occur. A rich ultrarelativistic heavy-ion physics programme is under way both at BNL-AGS and at CERN-SPS since 1986. The results obtained so far have led CERN to officially announce evidence for a new state of matter last year. A long-range programme of heavy-ion physics at higher energies is under way (BNL-RHIC) and in preparation (CERN-LHC). These lectures are meant as an introduction to the phy...

  12. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

  13. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

  14. Cs-137 geochronology, epithermal neutron activation analysis, and principal component analysis of heavy metals pollution of the Black Sea anoxic continental shelf sediments

    Science.gov (United States)

    Duliu, O. G.; Cristache, C.; Oaie, G.; Culicov, O. A.; Frontasyeva, M. V.

    2009-04-01

    concentrations; k represents the surface to plateau relative increment of concentration; Z represents concentration decrement: the depth at which the concentration becomes 1+k times greater than plateau one. Final results have shown with clarity that in the case of Zn, As, Br, Sn and Sb, the concentrations near sediment surface were 1.6 to 4.1 times greater then the plateau ones while Sc vertical profile, excepting some small fluctuations observed between 18 to 25 cm below surface, shown to be almost constant. Moreover, the concentration decrements Z of Zn, Br, Sn and Sb were almost coincident within one standard deviation while in the case of As, this coincidence appears within two standard deviation, these facts pleading for a comparable time evolution in the past 100 years. On the other hand, in the case of Sn and As, the maximum concentrations were reached 1 cm below the sediment surface, roughly corresponding to 1990 year, while the concentrations of all other three elements monotonously increases up to sediment surface. Further Principal Components Analysis of the data concerning the vertical distribution of all six elements illustrates the presence of two distinct clusters, one consisting of Zn, As, Br, Sn and Sb and the other on only of Sn, attesting both differences and similarities in the vertical distribution of considered elements. By comparing the experimental concentrations of all five elements with Romania Regulations concerning heavy metal pollution, we remarked that, by respect to these Regulations the only Zn, As, Br and Sb slightly exceeded normal accepted limits while the minimum alert concentrations were exceeded only in few cases by of As and Br, but no elements concentrations reached the intervention threshold. In our opinion, these results reflect the dynamics of the industrial activity in the riparian to Danube River European countries: a steady increase beginning with the last half of the XIX-th century followed by a slightly decline after the fall of

  15. Preparation and crystal structure of Ca4Sb2O

    International Nuclear Information System (INIS)

    Eisenmann, B.; Limartha, H.; Schaefer, H.

    1980-01-01

    The formerly described compound Ca 2 Sb is to be corrected to Ca 4 Sb 2 O as shown by X-ray diffractometer data of single crystals and neutron diffraction diagrams of powders. The compound crystallizes in the K 2 NiF 4 structure type. (orig.)

  16. Electronic structure and isomer shifts of Sn halides

    International Nuclear Information System (INIS)

    Terra, J.; Guenzburger, D.

    1988-01-01

    The all-electron first-principles Discrete Variational method was employed to study the electronic structure of SnF 4 , SnCl 4 , SnBr 4 and SnI 4 . Values of the electronic density at the Sn nucleus were derived and related to 119 Sn Isomer Shifts to obtain the nuclear constant Δ 2 >. Differences in values of ρ(o) area discussed in terms of the chemical bonding between Sn and halogen atoms. (author) [pt

  17. Neutron scattering study of Ce3Au3Sb4

    International Nuclear Information System (INIS)

    Kasaya, Mitsuo; Katoh, Kenichi; Kohgi, Masahumi; Osakabe, Toyotaka

    1993-01-01

    Rare-earth compounds with an Y 3 Au 3 Sb 4 -type crystal structure are semiconductors or semi-metals. Among them, Ce 3 Au 3 Sb 4 is a semiconductor with an activation energy of about 640 K and shows no magnetic order down to 1.5 K. The magnetic part of the specific heat for Ce 3 Au 3 Sb 4 obtained by subtracting the value for La 3 Au 3 Sb 4 from the total specific heat of Ce 3 Au 3 Sb 4 shows a broad peak at around 10 K, the origin of which is well explained by the crystalline-field splitting determined by neutron scattering. (author)

  18. Are Sb4n (n>1) clusters weakly interacting tetrahedra?

    International Nuclear Information System (INIS)

    Kumar, V.

    1993-03-01

    The electronic and atomic structure of Sb 4 and Sb 8 clusters is studied using the ab-initio molecular dynamics method in the local density approximation. While for Sb 4 we obtain a regular tetrahedron to be about 2.0 eV lower in energy than a bent rhombus, for Sb 8 two structures, (1) two weakly interaction tetrahedra and (2) a bent rhombus interacting with a stretched tetrahedron, obtained from the simulated annealing lie only within about 0.1 eV indicating the importance of the bent rhombus structure for larger clusters. As compared to two isolated tetrahedra, the binding energy of Sb 8 is about 0.5 eV. Our results are thus in excellent agreement with the experimental data which show predominantly the abundance of tetramers above room temperature. (author). 18 refs, 5 figs, 1 tab

  19. Thermoelectric properties and microstructure of Mg3Sb2

    International Nuclear Information System (INIS)

    Condron, Cathie L.; Kauzlarich, Susan M.; Gascoin, Franck; Snyder, G. Jeffrey

    2006-01-01

    Mg 3 Sb 2 has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg 3 Sb 2 were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K. - Graphical abstract: Dimensionless figure of merit for Mg 3 Sb 2 hot pressed and sintered at 873 K. The inset illustrates the crystal structure of Mg 3 Sb 2 along the [100] direction (white=Mg, black=Sb)

  20. A Summary of Rheology Data For SB3 and SB2/3 Blend Simulant Savannah River Site Wastes

    International Nuclear Information System (INIS)

    KOOPMAN, DAVIDC.

    2004-01-01

    The purpose of this study was to document the rheological measurements made for Sludge Batch 3 (SB3) and the blend of SB3 with Sludge Batch 2 (SB2). These measurements were primarily made on Slurry Mix Evaporator (SME) products, i.e. melter feeds. Some measurements were made on SB2/3 blend Sludge Receipt and Adjustment Tank (SRAT) products. Measurements on radioactive SB3 and SB2/3 samples have been limited to sludge characterization. SB2/3 measurements studied the impact of changing the SRAT acid addition strategy on the SRAT and SME product rheology. SB2/3 measurements also studied the impact of changing the waste loading target (sludge oxides content in glass) of the SME product. SB3 measurements studied the impact of changes in the wash end point and acid addition strategy on the SME product (melter feed) rheology. A summary of the significant findings is given below: SB3 radioactive sludge and blended SB2/3 radioactive sludge were less viscous than SB2 radioactive sludge. SB2/3 b lend sludge is more viscous than SB3 sludge. SB3 simulant SME product rheology was strongly impacted by changing the noble metal concentrations to more closely match those of the qualification sample. This reduction in noble metals produced a lower pH product that was also considerably less viscous. Increased acid addition in the SB2/3 SRAT generally led to less viscous simulant SRAT products. This trend did not persist in the SME products. SME products became more viscous when increased acid was used in the SRAT cycle from 135 per cent up to 170 per cent of stoichiometry, then became less viscous as total acid was increased further to 185 per cent. A significant increase in hydrogen generation occurred between 170 per cent and 185 per cent. The impact of acid addition on SB3 SME products was also variable. The impact of waste loading changes from 31 to 35 to 40 per cent on SB2/3 simulant SME products led to more viscous melter feeds as waste loading increased at constant wt. per cent

  1. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  2. Heavy quark effective theory and heavy baryon transitions

    International Nuclear Information System (INIS)

    Hussain, F.

    1992-01-01

    The heavy quark effective theory (HQET) is applied to study the weak decay of heavy mesons and heavy baryons and to predict the form factors for heavy to heavy and heavy to light transitions. 28 refs, 10 figs, 2 tabs

  3. Adducts of UF5 with SbF5 and structure of UF5 . 2SbF5

    International Nuclear Information System (INIS)

    Sawodny, W.; Rediess, K.

    1980-01-01

    Both α-UF 5 and β-UF 5 form only a 1:2 compound UF 5 . 2SbF 5 reacting directly with SbF 5 , from which UF 5 . SbF 5 can be obtained by thermal decomposition. UF 5 . 2SbF 5 crystallizes in the monoclinic space group P2 1 /c with the following lattice constants a = 8.110(4), b = 14.129(6), c = 10.032(6) A and β = 96.97(5) 0 ; Z = 4. An X-ray study shows centrosymmetric four-membered rings of alternating UF 8 and SbF 6 polyhedra connected by other SbF 6 entities. This structure is similar to that of UOF 5 . 2SbF 5 , but the distorted pentagonal-bipyramidal coordination of the U atom found there is increased to a dodecahedral coordination by an additional U-F-Sb bridge, though with a somewaht larger UF distance. (author)

  4. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling

  5. Photoemission study of the skutterudite compounds CoSb sub 3 and RhSb sub 3

    CERN Document Server

    Ishii, H; Fujimori, A; Nagamoto, Y; Koyanagi, T; Sofo, J O

    2002-01-01

    We have studied the electronic structure of the skutterudite compounds CoSb sub 3 and Co(Sb sub 0 sub . sub 9 sub 6 Te sub 0 sub . sub 0 sub 4) sub 3 by photoemission spectroscopy. Valence-band spectra revealed that a significant amount Sb 5p states are present near the Fermi level and are hybridized with Co 3d states just below it. The spectra are well reproduced by the band-structure calculation, suggesting that the effect of electron correlations is not important. When Te is substituted for Sb and n-type carriers are doped into CoSb sub 3 , the spectra are shifted to higher binding energies as described by the rigid-band model. From this shift and the free-electron model for the conduction and valence bands, we have estimated the band gap of CoSb sub 3 to be 0.03-0.04 eV, consistent with transport measurements. Photoemission spectra of RhSb sub 3 have also been measured and revealed expected similarities to and differences from those of CoSb sub 3. Unusual temperature dependence has been observed for the s...

  6. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays

    DEFF Research Database (Denmark)

    Ren, Dingding; Dheeraj, Dasa L.; Jin, Chengjun

    2016-01-01

    and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses...

  7. Effects of interlayer Sn-Sn lone pair interaction on the band gap of bulk and nanosheet SnO

    Science.gov (United States)

    Umezawa, Naoto; Zhou, Wei

    2015-03-01

    Effects of interlayer lone-pair interactions on the electronic structure of SnO are firstly explored by the density-functional theory. Our comprehensive study reveals that the band gap of SnO opens as increase in the interlayer Sn-Sn distance. The effect is rationalized by the character of band edges which consists of bonding and anti-bonding states from interlayer lone pair interactions. The band edges for several nanosheets and strained double-layer SnO are estimated. We conclude that the double-layer SnO is a promising material for visible-light driven photocatalyst for hydrogen evolution. This work is supported by the Japan Science and Technology Agency (JST) Precursory Research for Embryonic Science and Technology (PRESTO) program.

  8. Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector

    International Nuclear Information System (INIS)

    Husaini, S.; Shima, D.; Ahirwar, P.; Rotter, T. J.; Hains, C. P.; Dang, T.; Bedford, R. G.; Balakrishnan, G.

    2013-01-01

    Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

  9. Anaerobic and aerobic slurry bioreactors for remediation of a heavy soil contaminated with lindane

    International Nuclear Information System (INIS)

    Robles-Gonzalez, I. V.; Rios-Leal, E.; Galindez-Mayer, J.; Sastre-conde, I.; Poggi-Varaldo, H. M.

    2009-01-01

    Slurry bioreactors (SB) can be used for bioremediation of polluted heavy soils such as those characterized by high contents of clay and organic matter, when the contaminants are recalcitrant, toxic, and display hysteretic behaviour, and/or when bioremediation should be accomplished in short times under the pressure and monitoring of environmental agencies and regulators. (Author)

  10. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

    2014-10-14

    The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

  11. Heavy metals' data in soils for agricultural activities

    Directory of Open Access Journals (Sweden)

    T.A. Adagunodo

    2018-06-01

    Full Text Available In this article, the heavy metals in soils for agricultural activities were analyzed statistically. Ten (10 soil samples were randomly taken across the agricultural zones in Odo-Oba, southwestern Nigeria. Ten (10 metals; namely: copper (Cu, lead (Pb, chromium (Cr, arsenic (As, zinc (Zn, cadmium (Cd, nickel (Ni, antimony (Sb, cobalt (Co and vanadium (V were determined and compared with the guideline values. When the values were compared with the international standard, none of the heavy metals in the study area exceeded the threshold limit. However, the maximum range of the samples showed that Cr and V exceeded the permissible limit which could be associated with ecological risk. The data can reveal the distributions of heavy metals in the agricultural topsoil of Odo-Oba, and can be used to estimate the risks associated with the consumption of crops grown on such soils. Keywords: Agricultural soils, Heavy metals, Contamination, Environment, Soil screening, Geostatistics

  12. Controlling the antibacterial activity of CuSn thin films by varying the contents of Sn

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Yujin; Park, Juyun; Kim, Dong-Woo; Kim, Hakjun; Kang, Yong-Cheol, E-mail: yckang@pknu.ac.kr

    2016-12-15

    Highlights: • We deposit CuSn thin films on a Si substrate with various Cu/Sn ratio. • Antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time increased. • XPS was utilized to assign the chemical environment of CuSn thin films before and after antibacterial test. - Abstract: We investigated antibacterial activity of CuSn thin films against Gram positive Staphylococcus aureus (S. aureus). CuSn thin films with different Cu to Sn ratios were deposited on Si(100) by radio frequency (RF) magnetron sputtering method using Cu and Sn metal anodes. The film thickness was fixed at 200 nm by varying the sputtering time and RF power on the metal targets. The antibacterial test was conducted in various conditions such as different contact times and Cu to Sn ratios in the CuSn films. The antibacterial activities of CuSn thin films increased as the ratio of Cu and the contact time between the film and bacteria suspension increased execpt in the case of CuSn-83. The oxidation states of Cu and Sn and the chemical composition of CuSn thin films before and after the antibacterial test were investigated by X-ray photoelectron spectroscopy (XPS). When the contact time was fixed, the Cu species was further oxidized as the RF power on Cu target increased. The intensity of Sn 3d decreased with increasing Cu ratio. When the sample was fixed, the peak intensity of Sn 3d decreased as the contact time increased due to the permeation of Sn into the cell.

  13. The Role of Anionogenic Elements (As, Sb, Mo, Se, S, P, N, Cl, F, C) In The Formation of Technogenic Geochemical Anomalies

    Science.gov (United States)

    Abrosimova, Natalya; Bortnikova, Svetlana

    2017-12-01

    The study was conducted on the example of sulphide-containing mine tailings with a varying amount of sulphide and arsenide minerals, from three distinct tailings dumps situated in Russia: Karabash Mine Site, South Ural; Komsomolsk tailings impoundment, Kemerovo region; Khovu-Aksy mine site, Tuva Republic. The aim of the study was to compare the mobility of anionogenic elements (As, Sb, Mo, Se, S, P, N, Cl, F, C) and their role in migration, precipitation, and concentration of metals during the water-tailings interaction depending on the physicochemical parameters (pH, Eh) of the medium and the mineral composition of the waste material. Using slightly acidic leaching experiments the quantitative estimation of mobile forms of elements is given. Based on the compositions of the obtained water leaching solutions, aqueous speciation of chemical elements and saturation index of key minerals in the experimental solutions were calculated. The results of calculating forms of chemical elements made it possible to construct series of mobility of metals and metalloids in solutions with different physicochemical parameters. In the alkaline conditions, Sb>As>Cd>Cu>Zn>Fe>Pb, when the medium is acidified, the series changes, As>Cd>Cu>Zn>Pb>Sb>Fe in weakly alkaline conditions, Sb>Mn>As>Zn>Fe however, when the medium is acidified, the series changes to Cd>Mn>Pb>Cu>Zn>Sb>Ni>Fe>As under acidic conditions Cd>Cu>Zn>Pb>Mn>Fe>Se>Mo>Sb>As>Ni. The mineral composition of the tailings was investigated, which will allow to determine the sources of toxic elements and to understand the processes of secondary mineral formation in technogenic objects. Arsenopyrite and pyrite predominate in the heavy fraction of the Komsomolsk tailings impoundment, arsenopyrite grains are often corroded, Sb contained in Sb oxide and Sb sulfide. The pyrite and barite are determined in the solid matter of the Karabash Mine Site and chalcopyrite, sphalerite, tennantite Cu3AsS3, and tetrahedrite (Cu,Fe)12Sb4S13 are

  14. Formation of dust grains in the ejecta of SN 1987A

    International Nuclear Information System (INIS)

    Kozasa, Takashi; Hasegawa, Hiroichi; Nomoto, Kenichi

    1989-01-01

    Formation of dust grains in the ejecta of SN 1987A is investigated on the basis of a theory of homogeneous nucleation and grain growth. The formation of dust grains in the gas ejected from a heavy element-rich mantle is considered, including the effects of latent heat released during grain growth and of radiation from the photosphere. It is shown that dust grains can condense in the heavy-element-rich mantle, and that the time of formation strongly depends on the temperature structure in the ejecta. Moreover, the formation of dust grains is retarded by the strong SN radiation field and the effect of latent heat deposited during grain growth. 41 refs

  15. Deuteron interaction with 124Sn nuclei at sub-barrier energies

    Directory of Open Access Journals (Sweden)

    Yu.N. Pavlenko

    2015-04-01

    Full Text Available The measurements of cross sections for deuteron elastic scattering and (d,p reaction on 124Sn nuclei have been performed with aim to study the features of sub-barrier deuteron interaction with heavy nuclei. Experimental data were obtained on the electrostatic Tandem accelerator EGP-10K of the Institute for Nuclear Research (Kyiv at the deuteron beam energies Ed = 4.0; 5.0 and 5.5 MeV. Cross sections of deuteron elastic scattering were calculated in approach where the deuteron interaction potential with heavy nuclei at sub-barrier energies has been constructed in the framework of single folding model using the complex dynamic polarization potential. It is shown that the account of finite deuteron size leads to the increasing the nuclear potential in outer region of interaction and significantly improves the description of the experimental data. The calculations of elastic scattering cross sections were performed without any variations of the nuclear potential parameters. The analysis of measured integral cross sections of the 124Sn(d,p reaction and calculated cross sections of deuteron breakup reaction 124Sn(d,pn124Sn shows the dominant contribution of the neutron transfer reaction in the processes of the formation of protons and elastic scattering cross sections.

  16. Influence of atomic ordering on superconductivity and electric conductivity of A15 compounds with different valence electron density for heavy ion irradiated Nb3Al, Nb3Sn, Mo3Ge, Mo3Si and Mo-Re at low temperatures

    International Nuclear Information System (INIS)

    Lehmann, M.

    1981-01-01

    A15 compounds were studied using heavy ion Rutherford scattering, measurements of the transition temperature, electric conductivity and critical magnetic field. Radiation defects produced below 20 K by heavy ions are discussed, including anti-site-disorder effects. Annealing experiments were performed between 290 K and the transition temperature. The data are discussed in correlation with band structure effects and the theory of J. Appel (1976). (TW)

  17. Study for material analogs of FeSb2: Material design for thermoelectric materials

    Science.gov (United States)

    Kang, Chang-Jong; Kotliar, Gabriel

    2018-03-01

    Using the ab initio evolutionary algorithm (implemented in uspex) and electronic structure calculations we investigate the properties of a new thermoelectric material FeSbAs, which is a material analog of the enigmatic thermoelectric FeSb2. We utilize the density functional theory and the Gutzwiller method to check the energetics. We find that FeSbAs can be made thermodynamically stable above ˜30 GPa. We investigate the electronic structure and thermoelectric properties of FeSbAs based on the density functional theory and compare with those of FeSb2. Above 50 K, FeSbAs has higher Seebeck coefficients than FeSb2. Upon doping, the figure of merit becomes larger for FeSbAs than for FeSb2. Another material analog FeSbP, was also investigated, and found thermodynamically unstable even at very high pressure. Regarding FeSb2 as a member of a family of compounds (FeSb2, FeSbAs, and FeSbP) we elucidate what are the chemical handles that control the gaps in this series. We also investigate solubility (As or P for Sb in FeSb2) we found As to be more soluble. Finally, we study a two-band model for thermoelectric properties and find that the temperature dependent chemical potential and the presence of the ionized impurities are important to explain the extremum in the Seebeck coefficient exhibited in experiments for FeSb2.

  18. Unusual crystallization behavior in Ga-Sb phase change alloys

    Directory of Open Access Journals (Sweden)

    Magali Putero

    2013-12-01

    Full Text Available Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate the crystallization behavior of Sb-rich Ga-Sb alloys. Measurements of the sheet resistance during heating indicated a reduced crystallization temperature with increased Sb content, which was confirmed by in situ X-ray diffraction. The electrical contrast increased with increasing Sb content and the resistivities in both the amorphous and crystalline phases decreased. It was found that by tuning the composition between Ga:Sb = 9:91 (in at.% and Ga:Sb = 45:55, the change in mass density upon crystallization changes from an increase in mass density which is typical for most phase change materials to a decrease in mass density. At the composition of Ga:Sb = 30:70, no mass density change is observed which should be very beneficial for phase change random access memory (PCRAM applications where a change in mass density during cycling is assumed to cause void formation and PCRAM device failure.

  19. Positron annihilation studies of high dose Sb implanted silicon

    International Nuclear Information System (INIS)

    Schut, H.; Eijt, S.W.H.; Beling, C.D.; Ho, K.; Takamura, Y.

    2005-01-01

    The formation and evolution of vacancies and precipitates created by implantation of 60 keV, 2 x 10 16 cm -2 Sb + in pre-amorphized (0 0 1) Cz-Si is studied using the Doppler broadening (DB) and two-dimensional angular correlation of annihilation radiation (2D-ACAR) positron beam techniques. After implantation, samples were laser annealed (LTA) and subsequently thermal annealed at temperatures ranging from 400 to 1000 deg. C. Implantation-induced vacancy-type defects were detected up to a depth of 280 nm. After LTA, positron annihilation related to both Sb and remaining defects is observed in the first 100 nm below the surface. The deeper region only shows positron trapping at vacancy-type defects with strong reduced concentration. Complete removal is obtained after 600 deg. C anneal. At this temperature, the positron data for the upper region reveals trapping at Sb and Si sites only. With increasing annealing time (at 600 deg. C) or increasing temperature (up to 1000 deg. C) positron annihilation at Sb-sites associated with neighboring vacancies becomes apparent. Results are correlated with the observed Sb electrical deactivation above 600 deg. C, the shift from small Sb aggregates to precipitates and out-diffusion of Sb from the implantation region at higher temperatures

  20. Presence, mobility and bioavailability of toxic metal(oids) in soil, vegetation and water around a Pb-Sb recycling factory (Barcelona, Spain).

    Science.gov (United States)

    Mykolenko, S; Liedienov, V; Kharytonov, M; Makieieva, N; Kuliush, T; Queralt, I; Marguí, E; Hidalgo, M; Pardini, G; Gispert, M

    2018-06-01

    The work was conducted to establish contamination from improper disposal of hazardous wastes containing lead (Pb) and antimony (Sb) into nearby soils. Besides other elements in the affected area, the biological role of Sb, its behaviour in the pedosphere and uptake by plants and the food chain was considered. Wastes contained 139532 ± 9601 mg kg -1 (≈14%) Pb and 3645 ± 194 mg kg -1 (≈0.4%) Sb respectively and variability was extremely high at a decimetre scale. Dramatically high concentrations were also found for As, Cd, Cu, Mn, Ni, Sn and Zn. In adjacent natural soils metal(oid)s amounts decreased considerably (Pb 5034 ± 678 mg kg -1 , Sb 112 mg kg -1 ) though largely exceeded the directives for a given soil use. Metal(oid)s potential mobility was assessed by using H 2 O→KNO 3 →EDTA sequential extractions, and EDTA extracts showed the highest concentration suggesting stable humus-metal complexes formation. Nevertheless, selected plants showed high absorption potential of the investigated elements. Pb and Sb values for Dittrichia viscosa grown in wastes was 899 ± 627 mg kg -1 and 37 ± 33 mg kg -1 respectively. The same plant showed 154 ± 99 mg kg -1 Pb and 8 ± 4 mg kg -1 Sb in natural soils. Helichrysum stoechas had 323 ± 305 mg kg -1 Pb, and 8 ± 3 mg kg -1 Sb. Vitis vinifera from alongside vineyards contained 129 ± 88 mg kg -1 Pb and 18 ± 9 mg kg -1 Sb, indicating ability for metal uptake and warning on metal diffusion through the food chain. The biological absorption coefficient (BAC) and the translocation factor (TF) assigned phytoextraction potential to Dittrichia viscosa and Foeniculum vulgare and phytostabilization potential to Helichrysum stoechas. Dissolved metal (oid)s in the analysed water strongly exceeded the current directive being a direct threat for livings. Data warned against the high contamination of the affected area in all its

  1. SN1987A's Twentieth Anniversary

    Science.gov (United States)

    2007-02-01

    Looking back at 20 Years of Observations of this Supernova with ESO telescopes The unique supernova SN 1987A has been a bonanza for astrophysicists. It provided several observational 'firsts,' like the detection of neutrinos from an exploding star, the observation of the progenitor star on archival photographic plates, the signatures of a non-spherical explosion, the direct observation of the radioactive elements produced during the blast, observation of the formation of dust in the supernova, as well as the detection of circumstellar and interstellar material. ESO PR Photo 08a/07 ESO PR Photo 08a/07 SN1987A in the Large Magellanic Cloud Today, it is exactly twenty years since the explosion of Supernova 1987A in the Large Magellanic Cloud was first observed, at a distance of 163,000 light-years. It was the first naked-eye supernova to be seen for 383 years. Few events in modern astronomy have met with such an enthusiastic response by the scientists and now, after 20 years, it continues to be an extremely exciting object that is further studied by astronomers around the world, in particular using ESO's telescopes. When the first signs of Supernova 1987A, the first supernova of the year 1987, were noticed early on 24 February of that year, it was clear that this would be an unusual event. It was discovered by naked-eye and on a panoramic photographic plate taken with a 10-inch astrograph on Las Campanas in Chile by Oscar Duhalde and Ian Shelton, respectively. A few hours earlier, still on 23 February, two large underground detectors - in Japan and the USA - had registered the passage of high-energy neutrinos. Since SN 1987A exploded in the Large Magellanic Cloud (LMC), it was only accessible to telescopes in the Southern Hemisphere, more particularly in Australia, South Africa, and South America. In Chile, ESO's observatory at La Silla with its armada of telescopes with sizes between 0.5 and 3.6-m, played an important role. ESO PR Photo 08c/07 ESO PR Photo 08c/07 The

  2. Towards 100Sn: Studies on neutron-deficient even isotopes of tin

    International Nuclear Information System (INIS)

    Rathke, G.E.

    1987-02-01

    Neutron-deficient 108,106,104 Sn isotopes were produced by heavy ion induced fusion reactions using high-intensity 59 Ni beams from the UNILAC of the GSI. Their decay properties were studied by techniques of gamma and conversion electron spectroscopy employing the mass separator on-line to the UNILAC. Earlier information on the 108 Sn → 108 In and 106 Sn → 106 In decays was complemented and improved in the course of this work. The new nucleus 104 Sn and its decay to excited states in 104 In was identified and studied for the first time. These investigations yield the following results: the mass of 104 Sn and of nuclei linked to it by alpha decay or proton radioactivity, 108 Te, 112 Xe and 109 I, 113 Cs, respectively were determined from the measured Q EC value of 104 Sn and the known mass value of 104 In. These are nuclei very close or beyond the proton drip line. In addition, information on the quenching of the fast Gamow-Teller beta decay of the even neutron-deficient tin isotopes was obtained. This complements investigations on the N = 50 isotones 94 Ru and 96 Pd, and allows a systematic comparison of these transition strengths for nuclei near the doubly magic 100 Sn. The spreading of the vertical strokeπg 9/2 -1 vg 7/2 , 1 + > configuration over several states, due to residual interactions, and the centroid energies of these magnetic dipole states were determined for the corresponding odd-odd indium isotopes. (orig./HSI)

  3. STRESS a SN survey at ESO

    Science.gov (United States)

    Botticella, M. T.

    We performed the Southern inTermediate Redshift ESO Supernova Search (STRESS), a survey specifically designed to measure the rate of both SNe Ia and CC SNe, in order to obtain a direct comparison of the high redshift and local rates and to investigate the dependence of the rates on specific galaxy properties, most notably their colour. We found that the type Ia SN rate, at mean redshift z = 0.3, is 0.22+0.10+0.16-0.08-0.14 h270 SNu, while the CC SN rate, at z = 0.21, is 0.82+0.31+0.300.24-0.26 h270 SNu. The quoted errors are the statistical and systematic uncertainties. With respect to the local value, the CC SN rate at z = 0.2 is higher by a factor of ˜ 2, whereas the type Ia SN rate remains almost constant. We also measured the SN rates in the red and blue galaxies and found that the SN Ia rate seems to be constant in galaxies of different colour, whereas the CC SN rate seems to peak in blue galaxies, as in the local Universe. Finally we exploited the link between SFH and SN rates to predict the evolutionary behaviour of the SN rates and compare it with the path indicated by observations.

  4. Point defect balance in epitaxial GaSb

    International Nuclear Information System (INIS)

    Segercrantz, N.; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-01-01

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  5. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  6. First principles simulation of amorphous InSb

    Science.gov (United States)

    Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

    2013-05-01

    Ab initio molecular dynamics simulations based on density functional theory have been performed to generate a model of amorphous InSb by quenching from the melt. The resulting network is mostly tetrahedral with a minor fraction (10%) of atoms in a fivefold coordination. The structural properties are in good agreement with available x-ray diffraction and extended x-ray-absorption fine structure data and confirm the proposed presence of a sizable fraction of homopolar In-In and Sb-Sb bonds whose concentration in our model amounts to about 20% of the total number of bonds.

  7. Analyses of the Sn IX-Sn XII spectra in the EUV region

    International Nuclear Information System (INIS)

    Churilov, S S; Ryabtsev, A N

    2006-01-01

    The Sn IX-Sn XII spectra excited in a vacuum spark have been analysed in the 130-160 A wavelength region. The analysis was based on the energy parameter extrapolation in the isonuclear Sn VI-VIII and Sn XIII-XIV sequence. 266 spectral lines belonging to the 4d m -(4d m-1 4f+4p 5 4d m+1 ) (m=6-3) transition arrays were classified in the Sn IX-Sn XII spectra for the first time. All 18 level energies of the 4d 3 configuration and 39 level energies of the strongly interacting 4d 2 4f and 4p 5 4d 4 configurations were established in the Sn XII spectrum. The energy differences between the majority of the 4d m levels and about 40 levels of the 4d m-1 4f+4p 5 4d m+1 configurations were determined in each of the Sn IX, Sn X and Sn XI spectra (m=6-4). As a result, all intense lines were classified in the 130-140 A region relevant to the extreme ultraviolet (EUV) lithography. It was shown that the most of the intense lines in the 2% bandwidth at 135 A belong to the transitions in the Sn XI-Sn XIII spectra

  8. Heavy Menstrual Bleeding (Menorrhagia)

    Science.gov (United States)

    ... Us Information For… Media Policy Makers Blood Disorders Heavy Menstrual Bleeding Recommend on Facebook Tweet Share Compartir ... It can also be bleeding that is very heavy. How do you know if you have heavy ...

  9. Formation Mechanism of Self Assembled Horizontal ErSb Nanowires Embedded in a GaSb(001) Matrix

    Science.gov (United States)

    Wilson, Nathaniel; Kraemer, Stephan; PalmstrøM, Chris

    The ErxGa1-xSb exhibits a variety of self-assembling nanostructures. In order to harness these nanostructures for use in devices and other material systems it is important to understand their formation. We have characterized the growth mechanism of self-assembled horizontal ErSb nanowires in a GaSb(001) matrix through the use of in-situ Scanning Tunneling Microscopy (STM) as well as ex-situ Transmission Electron Microscopy (TEM). We observe large GaSb macrosteps on the growth surface of Er.3Ga.7Sb samples. The areas near the ledge and base of the macrosteps show significant differences in size and distribution of ErSb nanowires. Results suggest that the formation of macrosteps drives the transition from vertical to horizontal nanowires in the ErxGa1-xSb system. We also observe a low temperature growth mode, which results in horizontal nanowire formation under a wide range of flux conditions. This new growth mode does not exhibit the embedded growth observed in the formation of nanowires at higher temperatures and may allow for horizontal nanowire formation without the presence of macrosteps, as well as the formation of smaller nanoparticles which may be useful for achieving smaller nanoparticle dimensions and electron confinement effects. This work was supported by NSF-DMR under 1507875.

  10. Reactive ion etching of GaSb, (Al,Ga)Sb, and InAs for novel device applications

    International Nuclear Information System (INIS)

    LaTulipe, D.C.; Frank, D.J.; Munekata, H.

    1991-01-01

    Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. The authors of this paper have studied the reactive ion etching characteristics of GaSb, (Al,Ga)Sb, and InAs in both methane/hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH 4 /H 2 , the etch rate of (Al,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200 Angstrom/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl 2 was found to yield anistropic profiles, with the etch rate of (Al,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to the InAs stop layer was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs- channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics

  11. Chemical consequences of the neutron irradiation of ionic antimony oxides and Fe Sb2O4

    Energy Technology Data Exchange (ETDEWEB)

    Facetti, J F [Asuncion Nacional Univ. (Paraguay). Inst. de Ciencias

    1970-01-01

    The chemical consequences fo the neutron irradiation of ionic antimony oxides and Fe Sb2O4 are studied. The nature of the Sb-O2 bond effects the yield of SbV the higher the yield the more covalent the bond. In addition, the Fe Sb2O4 obeys the Maddock's rule.

  12. Oxidation of 1-butene over uranium oxide (UO3)-antimony oxide (Sb2O3) catalysts

    NARCIS (Netherlands)

    Simons, T.; Houtman, P.N.; Schuit, G.C.A.

    1971-01-01

    The oxidative dehydrogenation of butene to butadiene over U-Sb catalysts was investigated. The presence of two compds., (UO2)Sb3O7 and Sb3U3O14, reported by Grasselli and Callahan (1969), was confirmed with (UO2)Sb3O7 being the actual catalyst. The reaction is first order in butene and zero order in

  13. Increasing the thermoelectric power factor of Ge17Sb2Te20 by adjusting the Ge/Sb ratio

    Science.gov (United States)

    Williams, Jared B.; Mather, Spencer P.; Page, Alexander; Uher, Ctirad; Morelli, Donald T.

    2017-07-01

    We have investigated the thermoelectric properties of Ge17Sb2Te20. This compound is a known phase change material with electronic properties that depend strongly on temperature. The thermoelectric properties of this compound can be tuned by altering the stoichiometry of Ge and Sb without the use of additional foreign elements during synthesis. This tuning results in a 26% increase in the thermoelectric power factor at 723 K. Based on a single parabolic band model we show that the pristine material is optimally doped, and thus, a reduction in the lattice thermal conductivity of pure Ge17Sb2Te20 should result in an enhanced thermoelectric figure of merit.

  14. Heavy flavour in ALICE

    CERN Document Server

    Pillot, Philippe

    2008-01-01

    Open heavy flavours and heavy quarkonium states are expected to provide essential informa- tion on the properties of the strongly interacting system fo rmed in the early stages of heavy-ion collisions at very high energy density. Such probes are espe cially promising at LHC energies where heavy quarks (both c and b) are copiously produced. The ALICE detector shall measure the production of open heavy flavours and heavy quarkonium st ates in both proton-proton and heavy-ion collisions at the LHC. The expected performances of ALICE for heavy flavour physics is discussed based on the results of simulation studies on a s election of benchmark channels

  15. Cationic Site-Preference in the Yb14-xCaxAlSb11 (4.81 ≤ x ≤ 10.57 Series: Theoretical and Experimental Studies

    Directory of Open Access Journals (Sweden)

    Gnu Nam

    2016-07-01

    Full Text Available Four quaternary Zintl phases with mixed-cations in the Yb14-xCaxAlSb11 (4.81 ≤ x ≤ 10.57 series have been synthesized by using the arc-melting and the Sn metal-flux reaction methods, and the isotypic crystal structures of the title compounds have been characterized by both powder and single-crystal X-ray diffraction (PXRD and SXRD analyses. The overall crystal structure adopting the Ca14AlSb11-type can be described as a pack of four different types of the spiral-shaped one-dimensional octahedra chains with various turning radii, each of which is formed by the distorted ((Yb/CaSb6 octahedra. Four symmetrically-independent cationic sites contain mixed occupations of Yb2+ and Ca2+ with different mixing ratios and display a particular site preference by two cationic elements. Two hypothetical structural models of Yb4Ca10AlSb11 with different cationic arrangements were designed and exploited to study the details of site and bond energies. QVAL values provided the rationale for the observed site preference based on the electronegativity of each atom. Density of states (DOS curves indicated a semiconducting property of the title compounds, and crystal orbital Hamilton population (COHP plots explained individual chemical bonding between components. Thermal conductivity measurement was performed for Yb8.42(4Ca5.58AlSb11, and the result was compared to compounds without mixed cations.

  16. Taiwan's industrial heavy metal pollution threatens terrestrial biota

    International Nuclear Information System (INIS)

    Hsu, M.J.; Selvaraj, K.; Agoramoorthy, G.

    2006-01-01

    The bioconcentration levels of essential (Cu, Fe, Mg, Mn, and Zn) and non-essential (As, Cd, Hg, Pb, and Sn) elements have been investigated in different terrestrial biota such as fungi, plant, earthworm, snail, crab, insect, amphibian, lizard, snake, and bat including the associated soil, to investigate the ecosystem health status in Kenting National Park, Taiwan. High bioconcentrations of Cd, Hg, and Sn in snail, earthworm, crab, lizard, snake, and bat indicated a contaminated terrestrial ecosystem. High concentrations of Cd, Hg, and Sn in plant species, effective bioaccumulation of Cd by earthworm, snail, crab and bat, as well as very high levels of Hg found in invertebrates, amphibians, and reptiles revealed a strong influence from industrial pollution on the biotic community. This study for the first time presents data on the impact of heavy metal pollution on various terrestrial organisms in Taiwan. - Metal effects occur at any terrestrial levels in Taiwan

  17. Study of conformational changes and protein aggregation of bovine serum albumin in presence of Sb(III) and Sb(V).

    Science.gov (United States)

    Verdugo, Marcelo; Ruiz Encinar, Jorge; Costa-Fernández, José Manuel; Menendez-Miranda, Mario; Bouzas-Ramos, Diego; Bravo, Manuel; Quiroz, Waldo

    2017-01-01

    Antimony is a metalloid that affects biological functions in humans due to a mechanism still not understood. There is no doubt that the toxicity and physicochemical properties of Sb are strongly related with its chemical state. In this paper, the interaction between Sb(III) and Sb(V) with bovine serum albumin (BSA) was investigated in vitro by fluorescence spectroscopy, and circular dichroism (CD) under simulated physiological conditions. Moreover, the coupling of the separation technique, asymmetric flow field-flow fractionation, with elemental mass spectrometry to understand the interaction of Sb(V) and Sb(III) with the BSA was also used. Our results showed a different behaviour of Sb(III) vs. Sb(V) regarding their effects on the interaction with the BSA. The effects in terms of protein aggregates and conformational changes were higher in the presence of Sb(III) compared to Sb(V) which may explain the differences in toxicity between both Sb species in vivo. Obtained results demonstrated the protective effect of GSH that modifies the degree of interaction between the Sb species with BSA. Interestingly, in our experiments it was possible to detect an interaction between BSA and Sb species, which may be related with the presence of labile complex between the Sb and a protein for the first time.

  18. Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films for high thermal stability and long data retention phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shiyu; Wu, Weihua [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, Shanghai 201804 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Science, Shanghai 200050 (China)

    2017-04-15

    Highlights: • Sb{sub 7}Te{sub 3} (ST) provides a fast crystallization speed, low melting temperature. • The Sb{sub 7}Te{sub 3}/ZnSb films exhibits faster crystallization speed, high thermal stability. • The calculated temperature for 10-year data retention is about 127 {sup o}C. • The Sb{sub 7}Te{sub 3}/ZnSb multilayer configuration with low power consumption. - Abstract: Phase-change memory is regard as one of the most promising candidates for the next-generation non-volatile memory. In this work, we proposed a Sb{sub 7}Te{sub 3}/ZnSb multilayer thin films to improve the thermal stability of Sb-rich Sb{sub 3}Te{sub 7}. The sheet resistance ratio between amorphous and crystalline states reached up to 4 orders of magnitude. With regard to the thermal stability, the calculated temperature for 10-year data retention is about 127 °C. The threshold current and threshold voltage of a cell based on Sb{sub 7}Te{sub 3}/ZnSb are 6.9 μA and 1.9 V, respectively. The lower RESET power is presented in the PCM cells of Sb{sub 7}Te{sub 3}/ZnSb films, benefiting from its high resistivity.

  19. Phase transformation in Mg—Sb3Te thin films

    International Nuclear Information System (INIS)

    Li Jun-Jian; Chen Yi-Min; Nie Qiu-Hua; Lü Ye-Gang; Wang Guo-Xiang; Shen Xiang; Dai Shi-Xun; Xu Tie-Feng

    2014-01-01

    Mg-doped Sb 3 Te films are proposed to improve the performance of phase-change memory (PCM). We prepare Mg-doped Sb 3 Te films and investigate their crystallization behaviors, structural, optical and electrical properties. We find that Mg-doping can increase the crystallization temperature, enhance the activation energy, and improve the 10-year data retention of Sb 3 Te. Especially Mg 25.19 (Sb 3 Te)74.81 shows higher T c (∼ 190 °C) and larger E a (∼ 3.49 eV), which results in a better data retention maintaining for 10 yr at ∼ 112 °C. Moreover R a /R c value is also improved. These excellent properties make Mg—Sb—Te material a promising candidate for the phase-change memory (PCM). (special topic — international conference on nanoscience and technology, china 2013)

  20. States in 118Sn from 117Sn(d,p) 118Sn at 12 MeV

    International Nuclear Information System (INIS)

    Frota-Pessoa, E.

    1983-01-01

    118 Sn energy levels up to = 5.2 MeV excitation energy are studied in the reaction 117 Sn (d,p) 118 Sn. Deuterons had a bombarding energy of 12 MeV. The protons were analized by a magnetic spectrograph. The detector was nuclear emulsion and the resolution in energy about 10 KeV. The distorted-wave analysis was used to determine l values and spectroscopic strengths. Centers of gravity and the sums of reduced spectroscopic factors are presented for the levels when it was possible to determine the S' value. 66 levels of excitation energy were found which did not appear in previous 117 Sn (d,p) reactions. 40 levels were not found previously in any reaction giving 118 Sn. The results are compared with the known ones. (Author) [pt

  1. The crystal structure of ferdowsiite Ag8Sb4(As,Sb)4S16 and its relations to other ABX2 (A=Ag; B=As,Sb,Bi; X=S,Se) structures

    DEFF Research Database (Denmark)

    Makovicky, Emil; Topa, Dan

    2014-01-01

    arsenic. The crystal structure of ferdowsiite is a superstructure of a PbS like motif. The {100} planes of the PbS-like substructure are the (105̅), (301) and (010) planes in terms of the ferdowsiite lattice. The structure contains zig-zag chains of Sb1 connected via short Sb-S bonds and flanked by (Sb...

  2. Photochemical epoxidation of olefins by visible light in a redox system involving Sb(V) tetraphenylporphyrin and water

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, Haruo; Hida, Mitsuhiko (Tokyo Metropolitan Univ. (Japan))

    1989-03-25

    The authors explore electron donors from the viewpoint of solar energy storage. Much attention has been focused on how a water molecule can be incorporated into electron donor system. In this paper, the authors describe a photochemical epoxidation of alkene sensitized by Sb(V)-, P(V)-, Sn(IV)-, Ge(IV)- tetraphenylporphyrin (TPP) with higher oxidation potential than 1.0 Volts vs. NHE in redox systems with a water molecule as an electron donor. The water molecule acts as an electron donor, and alkene acts as an oxygen atom acceptor in this photoredox system. Epoxidation of alkenes usually requires strong oxidizing agents either by the thermal or photochemical method. This is the first example of the photochemical epoxide formation from alkene and water without any strong oxidizing agent. 1 fig.

  3. Modeling of InGaSb thermophotovoltaic cells and materials

    Energy Technology Data Exchange (ETDEWEB)

    Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01

    A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

  4. Rod-like hierarchical Sn/SnOx@C nanostructures with enhanced lithium storage properties

    Science.gov (United States)

    Yang, Juan; Chen, Sanmei; Tang, Jingjing; Tian, Hangyu; Bai, Tao; Zhou, Xiangyang

    2018-03-01

    Rod-like hierarchical Sn/SnOx@C nanostructures have been designed and synthesized via calcining resorcinol-formaldehyde (RF) resin coated Sn-based metal-organic frameworks. The rod-like hierarchical Sn/SnOx@C nanostructures are made of a great number of carbon-wrapped primary Sn/SnOx nanospheres of 100-200 nm in diameter. The as-prepared hierarchical Sn/SnOx@C nanocomposite manifests a high initial reversible capacity of 1177 mAh g-1 and remains 1001 mAh g-1 after 240 cycles at a current density of 200 mA g-1. It delivers outstanding high-rate performance with a reversible capacity of 823 mAh g-1 even at a high current density of 1000 mA g-1. The enhanced electrochemical performances of the Sn/SnOx@C electrode are mainly attributed to the synergistic effect of the unique hierarchical micro/nanostructures and the protective carbon layer.

  5. Fermi surface study of CeSb

    International Nuclear Information System (INIS)

    Aoki, H.; Crabtree, G.W.; Joss, W.; Hulliger, F.

    1984-09-01

    A Fermi surface study of the ferromagnetic phase of CeSb is presented. The γ frequency branches arising from the electron surfaces at the X points, three separate frequency branches from the hole surfaces at the GAMMA point and the low frequency branch α have been observed. The effective mass ratios are low and range from approx. 0.2 for the α branch to approx. 1.0 for the high frequency branch of γ. The low effective mass ratios suggest that the admixture of the conduction states with the f state is small. We have observed a drastic change in the appearance of the dHvA signal at the phase transition between the ferromagnetic and lower field antiferromagnetic phases: The low frequency α oscillation suddenly disappears as the crystal enters the antiferromagnetic phase. By utilizing the change in the signal appearance, the transition field strength has been measured as a function of the field direction. The present experimental results, particularly the origin of the α oscillation, are discussed in the light of the p-f mixing theory and recent band structure calculations based on localized f orbitals

  6. Fermi surface study of CeSb

    International Nuclear Information System (INIS)

    Aoki, H.; Crabtree, G.; Joss, W.; Hulliger, F.

    1985-01-01

    A Fermi surface study of the ferromagnetic phase of CeSb is presented. The γ frequency branches arising from the electron surfaces at the X points, three separate frequency branches from the hole surfaces at the GAMMA point, and the low-frequency branch α have been observed. The effective mass ratios are low and range from approx.0.2 for the α branch to approx.1.0 for the high-frequency branch of γ. The low effective mass ratios suggest that the admixture of the conduction states with the f state is small. We have observed a drastic change in the appearance of the de Haas--van Alpen signal at the phase transition between the ferromagnetic and lower field antiferromagnetic phases: the low-frequency α oscillation suddenly disappears as the crystal enters the antiferromagnetic phase. By utilizing the change in the signal appearance, the transition field strength has been measured as a function of the field direction. The present experimental results particularly the origin of the α oscillation, are discussed in the light of the p-f mixing theory and recent band-structure calculations based on localized f orbitals

  7. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Science.gov (United States)

    Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

    2018-05-01

    The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

  8. Studying superconducting Nb3Sn wire

    CERN Multimedia

    AUTHOR|(CDS)2099575

    2015-01-01

    Studying superconducting Nb3Sn wire. From the current experience from LHC and HL-LHC we know that the performance requirements for Nb3Sn conductor for future circular collider are challenging and should exceed that of present state-of-the-art materials.

  9. Anomalous temperature behavior of Sn impurities

    International Nuclear Information System (INIS)

    Haskel, D.; Shechter, H.; Stern, E.A.; Newville, M.; Yacoby, Y.

    1993-01-01

    Sn impurities in Pb and Ag hosts have been investigated by Moessbauer effect and in Pb by x-ray-absorption fine-structure (XAFS) studies. The Sn atoms are dissolved up to at least 2 at. % in Pb and up to at least 8 at. % in Ag for the temperature ranges investigated. The concentration limit for Sn-Sn interactions is 1 at. % for Pb and 2 at. % for Ag as determined experimentally by lowering the Sn concentration until no appreciable change occurs in the Moessbauer effect. XAFS measurements verify that the Sn impurities in Pb are dissolved and predominantly at substitutional sites. For both hosts the temperature dependence of the spectral intensities of isolated Sn impurities below a temperature T 0 is as expected for vibrating about a lattice site. Above T 0 the Moessbauer spectral intensity exhibits a greatly increased rate of drop-off with temperature without appreciable broadening. This drop-off is too steep to be explained by ordinary anharmonic effects and can be explained by a liquidlike rapid hopping of the Sn, localized about a lattice site. Higher-entropy-density regions of radii somewhat more than an atomic spacing surround such impurities, and can act as nucleation sites for three-dimensional melting

  10. Studying superconducting Nb$_{3}$Sn wire

    CERN Multimedia

    AUTHOR|(CDS)2099575

    2015-01-01

    Studying superconducting Nb$_{3}$Sn wire. From the current experience from LHC and HL-LHC we know that the performance requirements for Nb$_{3}$Sn conductor for future circular collider are challenging and should exceed that of present state-of-the-art materials.

  11. Neutrino properties and supernova SN1987a

    International Nuclear Information System (INIS)

    Nussinov, S.

    1989-01-01

    The use of SN1987a to indicate how limits on neutrino properties can be deduced from the observed neutrino signals is shown. Bounds on possible deviations from relativity are briefly considered. The possible evidence for a half-millisecond pulsar in the SN remnant and on speculative attempts at finding the same periodicity in the neutrino signal are commented on. 37 refs

  12. Thermoelectric properties of ZnSb films grown by MOCVD

    International Nuclear Information System (INIS)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-04-01

    The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

  13. The system analysis of temperature and melting enthalpy of intermetallic compounds of antimony-lanthanoids system of Sb Ln, Sb2Ln composition

    International Nuclear Information System (INIS)

    Badalova, M.A.; Chamanova, M.; Dodkhoev, E.S.; Badalov, A.; Abdusalyamova, M.N.

    2015-01-01

    Present article is devoted to system analysis of temperature and melting enthalpy of intermetallic compounds of antimony-lanthanoids system of Sb Ln, Sb 2 Ln composition. The melting enthalpy was estimated. The temperature value was determined.

  14. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah; Singh, Nirpendra; Schwingenschlö gl, Udo

    2016-01-01

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  15. Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

    2011-07-01

    The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

  16. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah Mohammed Abdullah

    2017-01-08

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  17. Role of interlayer coupling for the power factor of CuSbS2 and CuSbSe2

    KAUST Repository

    Alsaleh, Najebah M.

    2016-09-26

    The electronic and transport properties of bulk and monolayer CuSbS2 and CuSbSe2 are determined by using density functional theory and semiclassical Boltzmann transport theory, in order to investigate the role of interlayer coupling for the thermoelectric properties. The calculated band gaps of the bulk compounds are in agreement with experiments and significantly higher than those of the monolayers, which thus show lower Seebeck coefficients. Since also the electrical conductivity is lower, the monolayers are characterized by lower power factors. Therefore, interlayer coupling is found to be essential for the excellent thermoelectric response of CuSbS2 and CuSbSe2, even though it is weak.

  18. Crystal structure, magnetism, {sup 89}Y solid state NMR, and {sup 121}Sb Moessbauer spectroscopic investigations of YIrSb

    Energy Technology Data Exchange (ETDEWEB)

    Benndorf, Christopher [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Heletta, Lukas; Block, Theresa; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Eckert, Hellmut [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institute of Physics in Sao Carlos, University of Sao Paulo, Sao Carlos (Brazil)

    2017-02-15

    The ternary antimonide YIrSb was synthesized from the binary precursor YIr and elemental antimony by a diffusion controlled solid-state reaction. Single crystals were obtained by a flux technique with elemental bismuth as an inert solvent. The YIrSb structure (TiNiSi type, space group Pnma) was refined from single-crystal X-ray diffractometer data: a = 711.06(9), b = 447.74(5), c = 784.20(8) pm, wR{sub 2} = 0.0455, 535 F{sup 2} values, 20 variables. {sup 89}Y solid state MAS NMR and {sup 121}Sb Moessbauer spectra show single resonance lines in agreement with single-crystal X-ray data. YIrSb is a Pauli paramagnet. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Electrodeposition of nanostructured Sn-Zn coatings

    Science.gov (United States)

    Salhi, Y.; Cherrouf, S.; Cherkaoui, M.; Abdelouahdi, K.

    2016-03-01

    The electrodeposition of Sn-Zn coating at ambient temperature was investigated. The bath consists of metal salts SnCl2·2H2O and ZnSO4·7H2O and sodium citrate (NaC6H5Na3O7·2H2O) as complexing agent. To prevent precipitation, the pH is fixed at 5. Reducing tin and zinc through Sncit2- and ZnHcit- complex respectively is confirmed by the presence of two cathodic peaks on the voltammogram. The kinetic of tin (II) reduction process is limited by the SnCit2- dissociation. The SEM and TEM observations have showed that the coating consists of a uniform Sn-Zn layer composed of fine grains on which tin aggregates grow up. XRD revealed peaks corresponding to the hexagonal Zn phase and the tetragonal β-Sn phase.

  20. Laser spectroscopy of neutron deficient Sn isotopes

    CERN Multimedia

    We propose to study the ground state properties of neutron-deficient Sn isotopes towards the doubly-magic nucleus $^{100}$Sn. Nuclear spins, changes in the rms charge radii and electromagnetic moments of $^{101-121}$Sn will be measured by laser spectroscopy using the CRIS experimental beam line. These ground-state properties will help to clarify the evolution of nuclear structure properties approaching the $\\textit{N = Z =}$ 50 shell closures. The Sn isotopic chain is currently the frontier for the application of state-of-the-art ab-initio calculations. Our knowledge of the nuclear structure of the Sn isotopes will set a benchmark for the advances of many-body methods, and will provide an important test for modern descriptions of the nuclear force.

  1. AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

    International Nuclear Information System (INIS)

    Garza, J.G.; Shaji, S.; Rodriguez, A.C.; Das Roy, T.K.; Krishnan, B.

    2011-01-01

    Silver antimony selenide (AgSbSe 2 ) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb 2 S 3 ), silver selenide (Ag 2 Se), selenium (Se) and silver (Ag). Sb 2 S 3 thin film was prepared from a chemical bath containing SbCl 3 and Na 2 S 2 O 3 , Ag 2 Se from a solution containing AgNO 3 and Na 2 SeSO 3 and Se thin films from an acidified solution of Na 2 SeSO 3 , at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10 -3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe 2 or AgSb(S,Se) 2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe 2 /Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V oc = 435 mV and J sc = 0.08 mA/cm 2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe 2 as an absorber material by a non-toxic selenization process is achieved.

  2. InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří; Dominec, Filip; Mikhailova, M. P.; Veinger, A.I.; Kochman, I.V.

    2017-01-01

    Roč. 464, Apr (2017), s. 206-210 ISSN 0022-0248 R&D Projects: GA MŠk LM2015087; GA MŠk LO1603 Institutional support: RVO:68378271 Keywords : low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

  3. AgSbSe{sub 2} and AgSb(S,Se){sub 2} thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garza, J.G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Rodriguez, A.C.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-10-01

    Silver antimony selenide (AgSbSe{sub 2}) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb{sub 2}S{sub 3}), silver selenide (Ag{sub 2}Se), selenium (Se) and silver (Ag). Sb{sub 2}S{sub 3} thin film was prepared from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}, Ag{sub 2}Se from a solution containing AgNO{sub 3} and Na{sub 2}SeSO{sub 3} and Se thin films from an acidified solution of Na{sub 2}SeSO{sub 3}, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10{sup -3} Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe{sub 2} or AgSb(S,Se){sub 2} depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe{sub 2}/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V{sub oc} = 435 mV and J{sub sc} = 0.08 mA/cm{sup 2} under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe{sub 2} as an absorber material by a non-toxic selenization process is achieved.

  4. Heavy metal jako subkultura

    OpenAIRE

    KOUTNÁ, Daniela

    2016-01-01

    This bachelor thesis deals with heavy metal subculture. Its aim is to introduce the most important branches and to show broadness of heavy metal. This bachelor thesis describes development and history, briefly shows Czech heavy metal history alongside with the biggest and most popular Czech heavy metal festivals. It shows the most dressing concerns of society against this style.

  5. Natural widths and Coster-Kronig transitions of L X-ray spectra in elements between Pd and Sb

    International Nuclear Information System (INIS)

    Sakakura, Shusuke; Oohashi, Hirofumi; Ito, Yoshiaki; Tochio, Tatsunori; Vlaicu, Aurel M.; Yoshikawa, Hideki; Ikenaga, Eiji; Kobayashi, Keisuke

    2006-01-01

    The Lα and Lβ X-ray emission spectra in the elements between Pd (Z=46) and Sb (Z=51) were measured using a high-resolution double-crystal vacuum spectrometer. The relative intensities of satellite structures, which originate in L 1 L 3 M 4,5 Coster-Kronig transitions, were estimated to that of each diagram line, and compared with calculated values. According to the work of Chen et al. [1977a. Theoretical L-shell Coster-Kronig energies 11≤Z≤103. At. Data Nucl. Data Tables 19, 97-151], Salgueiro et al. [1987. J. Phys. (Paris) 48 Colloq. C9, 609] and Vlaicu et al. [1998. Investigation of the 74W L emission spectra and satellites. Phys. Rev. A 58, 3544] L 1 L 3 M 4 Coster-Kronig transition is forbidden for 50≤Z≤77, and L 1 L 3 M 5 Coster-Kronig transition is forbidden for 50≤Z≤73. The results suggest that L 1 L 3 M 4,5 Coster-Kronig transitions may be allowed even for Sn (Z=50) and Sb (Z=51)

  6. A theoretical-spectroscopy, ab initio-based study of the electronic ground state of 121SbH3

    International Nuclear Information System (INIS)

    Yurchenko, Sergei N.; Carvajal, Miguel; Yachmenev, Andrey; Thiel, Walter; Jensen, Per

    2010-01-01

    For the stibine isotopologue 121 SbH 3 , we report improved theoretical calculations of the vibrational energies below 8000 cm -1 and simulations of the rovibrational spectrum in the 0-8000 cm -1 region. The calculations are based on a refined ab initio potential energy surface and on a new dipole moment surface obtained at the coupled cluster CCSD(T) level. The theoretical results are compared with the available experimental data in order to validate the ab initio surfaces and the TROVE computational method [Yurchenko SN, Thiel W, Jensen P. J Mol Spectrosc 2007;245:126-40] for calculating rovibrational energies and simulating rovibrational spectra of arbitrary molecules in isolated electronic states. A number of predicted vibrational energies of 121 SbH 3 are provided in order to stimulate new experimental investigations of stibine. The local-mode character of the vibrations in stibine is demonstrated through an analysis of the results in terms of local-mode theory.

  7. Optimization of growth parameters for MOVPE-grown GaSb and Ga1−xInxSb

    International Nuclear Information System (INIS)

    Miya, S.S.; Wagener, V.; Botha, J.R.

    2012-01-01

    The triethylgallium/trimethylantimony (TEGa/TMSb) precursor combination was used for the metal-organic vapour phase epitaxial growth of GaSb at a growth temperature of 520 °C at atmospheric pressure. Trimethylindium was added in the case of Ga 1−x In x Sb growth. The effects of group V flux to group III flux ratio (V/III ratio) on the crystallinity and optical properties of GaSb layers are reported. It has been observed from the crystalline quality and optical properties that nominal V/III ratios of values greater than unity are required for GaSb epitaxial layers grown at this temperature. It has also been shown that Ga 1−x In x Sb can be grown using TEGa as a source of gallium species at atmospheric pressure. The relationship between Ga 1−x In x Sb vapour composition and solid composition has been studied at a V/III ratio of 0.78.

  8. Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

    Science.gov (United States)

    Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

    2018-04-01

    The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

  9. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.

    Science.gov (United States)

    Ren, Dingding; Dheeraj, Dasa L; Jin, Chengjun; Nilsen, Julie S; Huh, Junghwan; Reinertsen, Johannes F; Munshi, A Mazid; Gustafsson, Anders; van Helvoort, Antonius T J; Weman, Helge; Fimland, Bjørn-Ove

    2016-02-10

    Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternary III-V(1-y)Vy nanowires and hinders the development of high-performance nanowire devices based on such ternaries. Here, we report on the origins of Sb-induced effects affecting the morphology and crystal structure of self-catalyzed GaAsSb nanowire arrays. The nanowire growth by molecular beam epitaxy is changed both kinetically and thermodynamically by the introduction of Sb. An anomalous decrease of the axial growth rate with increased Sb2 flux is found to be due to both the indirect kinetic influence via the Ga adatom diffusion induced catalyst geometry evolution and the direct composition modulation. From the fundamental growth analyses and the crystal phase evolution mechanism proposed in this Letter, the phase transition/stability in catalyst-assisted ternary III-V-V nanowire growth can be well explained. Wavelength tunability with good homogeneity of the optical emission from the self-catalyzed GaAsSb nanowire arrays with high crystal phase purity is demonstrated by only adjusting the Sb2 flux.

  10. Gel-combustion synthesis of CoSb2O6 and its reduction to powdery Sb2Co alloy

    Directory of Open Access Journals (Sweden)

    MAJA JOVIC

    2009-01-01

    Full Text Available Sb2Co alloy in powdery form was synthesized via reduction with gaseous hydrogen of the oxide CoSb2O6, obtained by the citrate gel-combustion technique. The precursor was an aqueous solution of antimony nitrate, cobalt nitrate and citric acid. The precursor solution with mole ratio Co(II/Sb(V of 1:2 was gelatinized by evaporation of water. The gel was heated in air up to the temperature of self-ignition. The product of gel combustion was a mixture of oxides and it had to be additionally thermally treated in order to be converted to pure CoSb2O6. The reduction of CoSb2O6 by gaseous hydrogen yielded powdery Sb2Co as the sole phase. The process of oxide reduction to alloy was controlled by thermogravimetry, while X-ray diffractometry was used to control the phase compositions of both the oxides and alloys.

  11. Evaluation of heavy metals in atmospheric emissions from automotive industry by total reflection X-ray fluorescence with synchrotron radiation

    International Nuclear Information System (INIS)

    Moreira, Silvana; Weber Neto, Jose; Vives, Ana Elisa Sirito de

    2009-01-01

    This study had as goal to determine heavy metals and other elements (Ba, Br, Ca, Pb, Cl, Cr, Sr, Fe, Mn, Ni, K, Si, Ti and Zn) in atmospheric pollutants generated by an automotive industry located in the city of Engenheiro Coelho, state of Sao Paulo, Brazil. The sampling and sample preparation procedures were based on methods established by the Company of Sanitation and Technology (CETESB L9.234) and also by the Environmental Protection Agency (EPA - Method 29). The analysis was performed at XRF Beamline (D09B-XRF) in the Synchrotron Light Source Laboratory (Campinas/SP). A white beam of synchrotron radiation was used for sample and standard excitation which were irradiated by 100 seconds. For X-ray lines detection, a Ge (HP) detector with 150 eV of resolution at 5.9 keV was employed. For zinc, iron, barium, calcium and potassium, the values obtained were in the range of 30 mg/Nm 3 and, for other elements, the concentrations were approximately 1 mg/Nm 3 . The sum of As, Be, Co, Cr, Cu, Mn, Ni, Pb, Sb, Se, Sn, Te and Zn concentration was compared with the limits established by CONAMA 264/1999 and SEMA 041/2002 resolutions (7.0 mg/Nm 3 ) and it was observed that, for all samples, sums are higher than the permissive value mainly due to the high concentration of zinc. Detection limits for SR-TXRF technique were 0.10 μg/Nm 3 for Pb and 0.02 μg/Nm 3 for Zn. (author)

  12. Evaluation of heavy metals in atmospheric emissions from automotive industry by total reflection X-ray fluorescence with synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, Silvana; Weber Neto, Jose, E-mail: silvana@fec.unicamp.b [Universidade Estadual de Campinas (UNICAMP), SP (Brazil). Faculdade de Engenharia Civil, Arquitetura e Urbanismo. Dept. de Saneamento e Ambiente; Vives, Ana Elisa Sirito de, E-mail: aesvives@unimep.b [Universidade Metodista de Piracicaba (UNIMEP), Santa Barbara D' Oeste, SP (Brazil). Faculdade de Engenharia, Arquitetura e Urbanismo

    2009-07-01

    This study had as goal to determine heavy metals and other elements (Ba, Br, Ca, Pb, Cl, Cr, Sr, Fe, Mn, Ni, K, Si, Ti and Zn) in atmospheric pollutants generated by an automotive industry located in the city of Engenheiro Coelho, state of Sao Paulo, Brazil. The sampling and sample preparation procedures were based on methods established by the Company of Sanitation and Technology (CETESB L9.234) and also by the Environmental Protection Agency (EPA - Method 29). The analysis was performed at XRF Beamline (D09B-XRF) in the Synchrotron Light Source Laboratory (Campinas/SP). A white beam of synchrotron radiation was used for sample and standard excitation which were irradiated by 100 seconds. For X-ray lines detection, a Ge (HP) detector with 150 eV of resolution at 5.9 keV was employed. For zinc, iron, barium, calcium and potassium, the values obtained were in the range of 30 mg/Nm{sup 3} and, for other elements, the concentrations were approximately 1 mg/Nm{sup 3}. The sum of As, Be, Co, Cr, Cu, Mn, Ni, Pb, Sb, Se, Sn, Te and Zn concentration was compared with the limits established by CONAMA 264/1999 and SEMA 041/2002 resolutions (7.0 mg/Nm{sup 3}) and it was observed that, for all samples, sums are higher than the permissive value mainly due to the high concentration of zinc. Detection limits for SR-TXRF technique were 0.10 mug/Nm{sup 3} for Pb and 0.02 mug/Nm{sup 3} for Zn. (author)

  13. Deuterium and heavy water

    International Nuclear Information System (INIS)

    Vasaru, G.; Ursu, D.; Mihaila, A.; Szentgyorgyi, P.

    1975-01-01

    This bibliography on deuterium and heavy water contains 3763 references (1932-1974) from 43 sources of information. An author index and a subject index are given. The latter contains a list of 136 subjects, arranged in 13 main topics: abundance of deuterium , catalysts, catalytic exchange, chemical equilibria, chemical kinetics, deuterium and heavy water analysis, deuterium and heavy water properties, deuterium and heavy water separation, exchange reactions, general review, heavy water as moderator, isotope effects, synthesis of deuterium compounds

  14. HAIR HEAVY METAL AND ESSENTIAL TRACE ELEMENT CONCENTRATION IN CHILDREN WITH AUTISM SPECTRUM DISORDER.

    Science.gov (United States)

    Tabatadze, T; Zhorzholiani, L; Kherkheulidze, M; Kandelaki, E; Ivanashvili, T

    2015-11-01

    Our study aims evaluation of level of essential trace elements and heavy metals in the hair samples of children with autistic spectrum disorder (ASD) and identification of changes that are associated with autistic spectrum disorders. Case-control study was conducted at Child Development Center of Iashvili Children's Central Hospital (LD).We studied 60 children aged from 4 to 5 years old. The concentrations of 28 elements among (Ca,Zn, K, Fe, Cu, Se, Mn, Cr, S, Br, Cl, Co, Ag, V, Ni, Rb, Mo, Sr, Ti, Ba, Pb, As, Hg, Cd, Sb, Zr, Sn, Bi) them trace elements and toxic metals) were determined in scalp hair samples of children (n=30) with autistic spectrum disorder (ASD) and from control group of healthy children (n=30) with matched sex and age. Micro-elemental status was detected in the hair, with roentgen-fluorescence spectrometer method (Method MBИ 081/12-4502-000, Apparatus ALVAX- CIP, USA - UKRAIN) .To achieve the similarity of study and control groups, pre and postnatal as well as family and social history were assessed and similar groups were selected. Children with genetic problems, malnourished children, children from families with social problems were excluded from the study. The diagnosis of ASD were performed by pediatrician and psychologist (using M-CHAT and ADOS) according to DSM IV (Diagnostic and Statistical Manual of Mental Disorders from the American Psychiatric association) criteria. The study was statistically analyzed using computer program SPSS 19. Deficiencies of essential trace microelements revealed in both group, but there was significant difference between control and studied groups. The most deficient element was zinc (92% in target and 20% in control), then - manganese (55% and 8%) and selenium (38% and 4%). In case of cooper study revealed excess concentration of this element only in target group in 50% of cases. The contaminations to heavy metals were detected in case of lead (78% and 16), mercury (43% and 10%) and cadmium (38% and 8%). The

  15. Spectral and ion emission features of laser-produced Sn and SnO2 plasmas

    Science.gov (United States)

    Hui, Lan; Xin-Bing, Wang; Du-Luo, Zuo

    2016-03-01

    We have made a detailed comparison of the atomic and ionic debris, as well as the emission features of Sn and SnO2 plasmas under identical experimental conditions. Planar slabs of pure metal Sn and ceramic SnO2 are irradiated with 1.06 μm, 8 ns Nd:YAG laser pulses. Fast photography employing an intensified charge coupled device (ICCD), optical emission spectroscopy (OES), and optical time of flight emission spectroscopy are used as diagnostic tools. Our results show that the Sn plasma provides a higher extreme ultraviolet (EUV) conversion efficiency (CE) than the SnO2 plasma. However, the kinetic energies of Sn ions are relatively low compared with those of SnO2. OES studies show that the Sn plasma parameters (electron temperature and density) are lower compared to those of the SnO2 plasma. Furthermore, we also give the effects of the vacuum degree and the laser pulse energy on the plasma parameters. Project supported by the National Natural Science Foundation of China (Grant No. 11304235) and the Director Fund of WNLO, China.

  16. Sn-In-Ag phase equilibria and Sn-In-(Ag)/Ag interfacial reactions

    International Nuclear Information System (INIS)

    Chen Sinnwen; Lee Wanyu; Hsu Chiaming; Yang Chingfeng; Hsu Hsinyun; Wu Hsinjay

    2011-01-01

    Research highlights: → Thermodynamic models of Sn-In and Sn-In-Ag are developed using the CALPHAD approach. → Reaction layer in the Sn-In-(Ag)/Ag couples at 100 deg. C is thinner than those at 25 deg. C, 50 deg. C, and 75 deg. C. → Reactions in the Sn-20 wt%In-2.8 wt%Ag/Ag couples are faster than those in the Sn-20 wt%In/Ag couples. - Abstract: Experimental verifications of the Sn-In and Sn-In-Ag phase equilibria have been conducted. The experimental measurements of phase equilibria and thermodynamic properties are used for thermodynamic modeling by the CALPHAD approach. The calculated results are in good agreement with experimental results. Interfacial reactions in the Sn-In-(Ag)/Ag couples have been examined. Both Ag 2 In and AgIn 2 phases are formed in the Sn-51.0 wt%In/Ag couples reacted at 100 and 150 deg. C, and only the Ag 2 In phase is formed when reacted at 25, 50 and 75 deg. C. Due to the different growth rates of different reaction phases, the reaction layer at 100 deg. C is thinner than those at 25 deg. C, 50 deg. C, and 75 deg. C. In the Sn-20.0 wt%In/Ag couples, the ζ phase is formed at 250 deg. C and ζ/AgIn 2 phases are formed at 125 deg. C. Compared with the Sn-20 wt%In/Ag couples, faster interfacial reactions are observed in the Sn-20.0 wt%In-2.8 wt%Ag/Ag couples, and minor Ag addition to Sn-20 wt%In solder increases the growth rates of the reaction phases.

  17. Growth of highly textured SnS on mica using an SnSe buffer layer

    International Nuclear Information System (INIS)

    Wang, S.F.; Fong, W.K.; Wang, W.; Surya, C.

    2014-01-01

    We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer. - Highlights: • A record low rocking curve FWHM for deposited SnS on mica • Investigation of the nucleation of SnS on mica using the interface model • Investigation of nucleation mechanism by phi-scan measurement • Grain boundary formation from crystallites of various nucleation orientations • Suppression of nucleation orientations using an SnSe buffer layer

  18. Chemical Speciation and Quantitative Evaluation of Heavy Metal Pollution Hazards in Two Army Shooting Range Backstop Soils.

    Science.gov (United States)

    Islam, Mohammad Nazrul; Nguyen, Xuan Phuc; Jung, Ho-Young; Park, Jeong-Hun

    2016-02-01

    The chemical speciation and ecological risk assessment of heavy metals in two shooting range backstop soils in Korea were studied. Both soils were highly contaminated with Cd, Cu, Pb, and Sb. The chemical speciation of heavy metals reflected the present status of contamination, which could help in promoting management practices. We-rye soil had a higher proportion of exchangeable and carbonate bound metals and water-extractable Cd and Sb than the Cho-do soil. Bioavailable Pb represented 42 % of the total Pb content in both soils. A significant amount of Sb was found in the two most bioavailable fractions, amounting to ~32 % in the soil samples, in good agreement with the batch leaching test using water. Based on the values of ecological risk indices, both soils showed extremely high potential risk and may represent serious environmental problems.

  19. Heavy Metal Contamination in Soil and Brown Rice and Human Health Risk Assessment near Three Mining Areas in Central China

    OpenAIRE

    Fan, Yu; Zhu, Tingping; Li, Mengtong; He, Jieyi; Huang, Ruixue

    2017-01-01

    Background. Metal mining and waste discharge lead to regional heavy metal contamination and attract major concern because of the potential risk to local residents. Methods. This research was conducted to determine lead (Pb), cadmium (Cd), arsenic (As), manganese (Mn), and antimony (Sb) concentrations in soil and brown rice samples from three heavy metal mining areas in Hunan Province, central China, and to assess the potential health risks to local inhabitants. Results. Local soil contaminati...

  20. Genotoxicity of 11 heavy metals detected as food contaminants in two human cell lines.

    Science.gov (United States)

    Kopp, B; Zalko, D; Audebert, M

    2018-04-01

    Heavy metals, such as arsenic (As), antimony (Sb), barium (Ba), cadmium (Cd), cobalt (Co), germanium (Ge), lead (Pb), nickel (Ni), tellurium (Te), and vanadium (V) are widely distributed in the environment and in the food chain. Human exposure to heavy metals through water and food has been reported by different international agencies. Although some of these heavy metals are essential elements for human growth and development, they may also be toxic at low concentrations due to indirect mechanisms. In this study, the genotoxic and cytotoxic properties of 15 different oxidation statuses of 11 different heavy metals were investigated using high-throughput screening (γH2AX assay) in two human cell lines (HepG2 and LS-174T) representative of target organs (liver and colon) for food contaminants. Base on their lowest observed adverse effect concentration, the genotoxic potency of each heavy metal in each cell line was ranked in decreasing order, NaAsO 2  > CdCl 2  > PbCl 2 (only in LS-174T cells) > As 2 O 5  > SbCl 3  > K 2 TeO 3  > As 2 O 3 . No significant genotoxicity was observed with the other heavy metals tested. Cell viability data indicate that several heavy metals (As, Cd, Co, Ni, Sb, and Te) induce cytotoxicity at high concentrations, whereas an increase in the number of cells was observed for lead concentrations >100 µM in both cell lines tested, suggesting that lead stimulates cell growth. All these results highlight the possible human health hazards associated with the presence of heavy metals present in food. Environ. Mol. Mutagen. 59:202-210, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  1. Ab Initio Molecular Dynamics Studies of Pb m Sb n ( m + n ≤ 9) Alloy Clusters

    Science.gov (United States)

    Song, Bingyi; Xu, Baoqiang; Yang, Bin; Jiang, Wenlong; Chen, Xiumin; Xu, Na; Liu, Dachun; Dai, Yongnian

    2017-10-01

    Structure, stability, and dynamics of Pb m Sb n ( m + n ≤ 9) clusters were investigated using ab initio molecular dynamics. Size dependence of binding energies, the second-order energy difference of clusters, dissociation energy, HOMO-LUMO gaps, Mayer bond order, and the diffusion coefficient of Pb m Sb n clusters were discussed. Results suggest that Pb3Sb2, Pb4Sb2, and Pb5Sb4 ( n = 2 or 4) clusters have higher stability than other clusters, which is consistent with previous findings. In case of Pb-Sb alloy, the dynamics results show that Pb4Sb2 (Pb-22.71 wt pct Sb) can exist in gas phase at 1073 K (800 °C), which reasonably explains the azeotropic phenomenon, and the calculated values are in agreement with the experimental results (Pb-22 wt pct Sb).

  2. First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

    Science.gov (United States)

    Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

    2015-05-01

    First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

  3. Sb interactions with TaC precipitates and Cu in ion-implanted α-Fe

    International Nuclear Information System (INIS)

    Follstaedt, D.M.; Myers, S.M.

    1980-01-01

    The interactions of Sb with the other species implanted into Fe to form Fe-Ta-C-Sb and Fe-Cu-Sb alloys have been examined with transmission electron microscopy and Rutherford backscattering following annealing at 873 0 K. Trapping of Sb at TaC precipitates is observed in the former alloy just as was previously observed in Fe-Ti-C-Sb. In Fe-Cu-Sb, Sb interactions are governed by the atomic ratio of Sb to Cu. For ratios between 0.2 to 0.4, the compound β-Cu 3 Sb was observed to form. For Sb to Cu ratios approx.< 0.1, fcc Cu precipitates were observed. In addition to the expected Sb dissolution in Cu, Sb trapping by Cu precipitates is also observed. The binding enthalpy of Sb at both TaC and Cu precipitates with respect to a solution site in the bcc Fe is the same as observed for TiC, approx. 0.4 eV. The constancy of the binding enthalpy at such chemically dissimilar precipitates supports the hypothesis that the trapping is due to the structural discontinuity of the precipitate-host interface. The observed Sb trapping at precipitates is of potential significance for the control of temper embrittlement in bcc steels

  4. Intruder bands in odd-A {sup 109-115}Sb

    Energy Technology Data Exchange (ETDEWEB)

    Janzen, V P [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; [McMaster Univ., Hamilton, ON (Canada). Dept. of Physics; Andrews, H R; Galindo-Uribarri, A; Radford, D C; Ward, D [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; Omar, A; Mullins, S; Persson, L; Prevost, D; Rodriguez, J; Sawicki, M; Unrau, P; Waddington, J C [McMaster Univ., Hamilton, ON (Canada). Dept. of Physics; Drake, T E; Zwartz, G [Toronto Univ., ON (Canada). Dept. of Physics; Fossan, D B; Lafosse, D R; Hughes, J R; Schnare, H; Timmers, H; Vaska, P [State Univ. of New York, Stony Brook, NY (United States). Dept. of Physics; Haas, B [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.; [Strasbourg-1 Univ., 67 (France). Centre de Recherches Nucleaires; Paul, E S; Wilson, J [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.; Pilotte, S [Ottawa Univ., ON (Canada). Dept. of Physics; Wadsworth, R [York Univ. (United Kingdom). Dept. of Physics; Wyss, R [Joint Inst. for Heavy Ion Research, Oak Ridge, TN (United States)

    1992-08-01

    The existence of rotational structures in nuclei bordering on the spherical Z= 50 closed shell has been known for some time. Nevertheless, our understanding of collective effects in this region is remarkably incomplete; for example, before this work little high-spin data existed and there were no lifetime measurements to confirm the collectivity associated with the rotational bands observed in Sb (Z = 51) and Sn (Z = 50) nuclei. Furthermore, the role of the h{sub 11/2} orbital was virtually unknown, although it has the highest angular momentum of the orbitals in this mass region and therefore is expected to have the most influence on the properties of high-spin states. In the A {approx} 130 and A {approx} 180 mass regions, where highly deformed intruder bands have been observed, it is the neutron i{sub 13/2} orbitals, respectively, which are preferentially lowered in energy by a combination of large deformation and fast rotation In lighter nuclei the h{sub 11/2} orbital is expected to appear as an intruder configuration. (author). 11 refs., 1 tab., 4 figs.

  5. A new solid solution compound with the Sr{sub 21}Mn{sub 4}Sb{sub 18} structure type. Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}

    Energy Technology Data Exchange (ETDEWEB)

    Kunz Wille, Elizabeth L.; Cooley, Joya A.; Fettinger, James C.; Kazem, Nasrin; Kauzlarich, Susan M. [California Univ., Davis, CA (United States). Dept. of Chemistry

    2017-09-01

    The title compound with the nominal formula, Sr{sub 13}Eu{sub 8}Cd{sub 3}Mn{sub 1}Sb{sub 18}, was synthesized by Sn-flux. Structure refinement was based on single-crystal X-ray diffractometer data. Employing the exact composition, the formula is Sr{sub 13.23}Eu{sub 7.77}Cd{sub 3.12}Mn{sub 0.88}Sb{sub 18} for the solid solution Sr{sub 21-x}Eu{sub x}Cd{sub 4-y}Mn{sub y}Sb{sub 18}. This phase adopts the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure with site preferences for both Eu and Cd. The structure crystallizes in the monoclinic system in space group C2/m and Z=4: a=18.1522(11), b=17.3096(10), c=17.7691(10) Aa, β=91.9638(8) , 6632 F{sup 2} values, 216 variables, R1=0.0254 and wR2=0.0563. Site selectivity of the elements in this new compound will be discussed in relationship with the Sr{sub 21}Mn{sub 4}Sb{sub 18} type structure and other related structure types. Temperature dependent magnetic susceptibility data reveal Curie-Weiss paramagnetism with an experimental moment of 19.3 μ{sub B}/f.u. and a Weiss constant of 0.4 K. Magnetic ordering is seen at low temperatures, with a transition temperature of 3.5 K.

  6. Crystal structure and bonding characteristics of In-doped β-Zn4Sb3

    International Nuclear Information System (INIS)

    Tang, Dingguo; Zhao, Wenyu; Cheng, Sudan; Wei, Ping; Yu, Jian; Zhang, Qingjie

    2012-01-01

    The effects of indium impurity on the crystal structure and bonding characteristics of In-doped β-Zn 4 Sb 3 were investigated by powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The XRD Rietveld refinement indicates that the indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site and simultaneously leads to the increase of Zn occupancy. The observations of binding energy shift and a new valence state in Sb 3d core-level XPS spectra can be attributed to the charge transfer from In and Zn to Sb. As a result, more electropositive Zn atoms are needed to maintain the charge balance. The reduction of the lattice thermal conductivity is ascribed to the formation of the asymmetric Sb–In bond, resulting in much low lattice thermal conductivity of 0.49 W −1 K −1 of Zn 4 Sb 2.96 In 0.04 . - Graphical abstract: The indium impurity substitutes one of Sb atoms in Sb–Sb dimer, resulting the charge transfer from In to Sb, which leads to the binding energy of Sb 3d core level XPS spectra shift to low value. Highlights: ► The indium impurity preferentially substitutes one of Sb atoms in Sb–Sb dimer at the 12c Sb(2) site. ► The occupancy of Zn increases by the In substitution for Sb, whereas that of Sb keeps constant. ► The binding energy of Sb 3d shifts to low value. ► The charge transfer occurs from In and Zn to Sb.

  7. Phase equilibria melt-solid in the systems Pb-InSb-CaSb and Pb-InCs-GaAs

    International Nuclear Information System (INIS)

    Grebenyuk, A.M.; Charykov, N.A.; Puchkov, L.V.

    1992-01-01

    Results of experimental investigation and thermodynamic calculation of fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs thernary systems, which haven't been investigated earlier, are presented. Fusibility curves of Pb-InSb-GaSb and Pb-InAs-GaAs systems contain two crystallization fields: solid solutions of In x Ga 1-x Sb and Pb, In x Ga 1-x As and Pb. The latter fields are retained against Pb figurative point and conform to 582 K < T < 593 K crystallization temperatures

  8. Single-Particle States in $^{133}$Sn

    CERN Multimedia

    Huck, A

    2002-01-01

    % IS338 \\\\ \\\\ It is suggested to investigate the $\\beta^- $-decay of $^{133}$In and $^{134}$In in order to determine the single-particle states in $^{133}$Sn, which are so far unknown and needed for the shell-model description of the region close to $^{132}$Sn. Large hyper-pure Ge-detectors will be used for the $\\gamma$-ray spectroscopy. In the experiments with $^{134}$In, delayed neutrons in coincidence with $\\gamma$-rays from excited states in $^{133}$Sn provide the opportunity for a very selective detection of the states in question.

  9. Electronic and magnetic properties of SmCrSb3 and GdCrSb3: A first principles study

    International Nuclear Information System (INIS)

    Sandeep; Ghimire, M.P.; Thapa, R.K.

    2011-01-01

    The density of states (DOS) and the magnetic moments of SmCrSb 3 and GdCrSb 3 have been studied by first principles full-potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). For the exchange-correlation potential, the local-spin density approximations with correlation energy (LSDA+U) method have been used. Total and partial DOS have been computed using the WIEN2k code. DOS result shows the exchange-splittings of Cr-3d and rare-earth (R) 4f states electrons, which are responsible for the ground state ferromagnetic (FM) behavior of the systems. The FM behavior of these systems is strongly influenced by the average number of Cr-3d and Sm (Gd) 4f-electrons. The effective moment of SmCrSb 3 is found to be 7.07 μ B while for GdCrSb 3 it is 8.27 μ B . The Cr atom plays a significant role on the magnetic properties due to the hybridization between Cr-3d and Sb-5p states. - Highlights: → DOS and the magnetic moments of SmCrSb 3 and GdCrSb 3 are studied by full-FP-LAPW method. → Exchange splitting of eg and t2g of Cr-3d states and the rare-earth 4f state electrons are responsible for ground state ferromagnetism. → Rare-earth magnetic moments are greater than Cr moment indicating presence of 4f states.

  10. Nonlinear I-V characteristics of doped SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Dhage, S.R.; Choube, Vandana; Ravi, V

    2004-07-15

    When tin oxide is doped with Sb{sub 2}O{sub 3} and CoO, it shows highly nonlinear current (I)-voltage (V) characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO{sub 2}. Antimony oxide acts as a donor and increases the conductivity. The results are nearly same when antimony oxide is replaced by tantalum oxide. The grain size of these sintered ceramics varies from 5 to 7 {mu}m and the grain boundary barrier height (PHI{sub B}) is in the range of 0.5 eV. The observed nonlinear coefficient ({alpha}) is 25 and 27 for antimony and tantalum oxide, respectively and the breakdown field is in the range of 1250 V cm{sup -1}.

  11. Ethanol electrooxidation on Pt-Sn and Pt-Sn-W bulk alloys

    Energy Technology Data Exchange (ETDEWEB)

    Anjos, D.M. dos; Hahn, F.; Leger, J.M.; Kokoh, K.B. [Universite de Poitiers, Poitiers Cedex (France). Centre National de la Recherche Scientifique (CNRS). Equipe Electrocatalyse; Tremiliosi-Filho, G. [Universidade de Sao Paulo (USP), Sao Carlos, SP (Brazil). Inst. de Quimica

    2008-07-01

    Ethanol oxidation has been studied on Pt-Sn and Pt-Sn-W electrodes prepared in an arc-melting furnace. Different electrochemical techniques like cyclic voltammetry and chronoamperometry were used to evaluate the catalytic activity of these materials. The electro-oxidation process was also investigated by in situ infrared reflectance spectroscopy in order to determine adsorbed intermediates and reaction products. Experimental results indicated that Pt-Sn and Pt-Sn-W alloys are able to oxidize ethanol mainly to acetaldehyde and acetic acid. Adsorbed CO was also detected, demonstrating the viability of splitting the C-C bond in the ethanol molecule during the oxidation process. The adsorbed CO was further oxidized to CO{sub 2}.This reaction product was clearly detected by SNIFTIRS. Pt-Sn-W catalyst showed a better electrochemical performance than Pt-Sn that, in it turn, is better than Pt-alone. (author)

  12. Electrical and optical properties of SnEuTe and SnSrTe films

    Science.gov (United States)

    Ishida, Akihiro; Tsuchiya, Takuro; Yamada, Tomohiro; Cao, Daoshe; Takaoka, Sadao; Rahim, Mohamed; Felder, Ferdinand; Zogg, Hans

    2010-06-01

    The SnTe, Sn1-xEuxTe and Sn1-xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm-3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1-xEuxTe and Sn1-xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

  13. Quaternary InGaAsSb Thermophotovoltaic Diodes

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-01-01

    In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

  14. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  15. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  16. Lithium insertion mechanism in SnS2

    International Nuclear Information System (INIS)

    Lefebvre-Devos, I.; Olivier-Fourcade, J.; Jumas, J.C.; Lavela, P.

    2000-01-01

    We study lithium insertion in SnS 2 by means of 119 Sn Moessbauer spectroscopy, x-ray absorption spectroscopy at Sn L I,III , and S K edges, and theoretical electronic structures (calculated in the density-functional theory framework). An insertion mechanism is derived according to the Li amount. It shows the influence of the SnS 2 -layered structure on the Sn reduction, particularly the possibility of an intermediate oxidation state between Sn IV and Sn II , which is not observed during Li insertion in three-dimensional sulfides

  17. Investigation of InAs/GaSb-based superlattices by diffraction methods

    Energy Technology Data Exchange (ETDEWEB)

    Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

    2010-02-15

    We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

  18. 195Pt and 119Sn Knight shifts of U3Pt3Sn4

    International Nuclear Information System (INIS)

    Kojima, K.; Takabatake, T.; Harada, A.; Hihara, T.

    1995-01-01

    The 195 Pt and 119 Sn Knight shifts in U 3 Pt 3 Sn 4 have been measured in the temperature range 4.2-298K. They exhibit Curie-Weiss like behaviors above about 50K and remain constant below about 10K. This suggests that the deviation of χ(T) from the modified Curie-Weiss law is an intrinsic property of U 3 Pt 3 Sn 4 . ((orig.))

  19. Syntheses, and crystal and electronic structures of the new Zintl phases Na2ACdSb2 and K2ACdSb2 (A=Ca, Sr, Ba, Eu, Yb): Structural relationship with Yb2CdSb2 and the solid solutions Sr2-xAxCdSb2, Ba2-xAxCdSb2 and Eu2-xYbxCdSb2

    International Nuclear Information System (INIS)

    Saparov, Bayrammurad; Saito, Maia; Bobev, Svilen

    2011-01-01

    Presented are the details of the syntheses, crystal and electronic structures of a new family of Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb), as well as the solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 . The structures of Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) were determined to be of a new type with the non-centrosymmetric space group Pmc2 1 (no. 26), Pearson symbol oP12, with lattice parameters a=4.684(1)-4.788(1) A; b=9.099(3)-9.117(2) A; c=7.837(1)-8.057(2) A for the Na 2 ACdSb 2 series, and a=4.6637(9)-5.0368(8) A; b=9.100(2)-9.8183(15) A; and c=7.7954(15)-8.4924(13) A for K 2 ACdSb 2 , respectively. The solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 and Eu 2-x Yb x CdSb 2 (x∼1) are isostructural and isoelectronic to the recently reported Yb 2 CdSb 2 (space group Cmc2 1 (no. 36), Pearson symbol cP20). All discussed structures are based upon CdSb 2 4- polyanionic layers, similar to the ones observed in Yb 2 CdSb 2 , with various alkali- and/or alkaline-earth cations coordinated to them. Magnetic susceptibility and Seebeck coefficient measurements on selected Eu 2-x Yb x CdSb 2 samples, taken at low temperatures up to 300 K, are also reported. -- Graphical abstract: The quaternary Zintl phases Na 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) with novel layered structures have been synthesized for the first time and structurally characterized by single-crystal X-ray diffraction. Reported as well are the results from crystallographic and property studies of the closely related solid solutions Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 2 ACdSb 2 and K 2 ACdSb 2 (A=Ca, Sr, Ba, Eu, Yb) are new quaternary Zintl phases. → Sr 2-x A x CdSb 2 , Ba 2-x A x CdSb 2 (x∼1), and Eu 2-x Yb x CdSb 2 (1 4 tetrahedra. → Eu 2-x Yb x CdSb 2 (1< x<2) exhibit high Seebeck coefficient (217 μV/K at RT).

  20. Super VHS video cassette recorder, A-SB88; Super VHS video A-SB88

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    A super VHS video cassette recorder, A-SB88, was commercialized having no compromised aspects at all in picture quality, sound quality, operability, energy conservation, design, etc. In the picture quality, the VCR is mounted with the S-ET system capable of realizing a quality comparable to SVHS with a three-dimensional Y/C detached circuit for dynamic moving image detection, three-dimensional DNR(digital noise reduction) and TBC(time base corrector), FE(flying erase) circuit, and a normal tape. In the operability, it is provided with a remote control transfer in large LCD, 400x high speed rewind, reservation system capable of simply reserving a serial drama for example, and a function for searching the end of picture recording; also, in the environmental aspect, the stand-by power consumption was reduced to 1/10 of conventional models (ratio with Toshiba A-BS6 at display power off). (translated by NEDO)

  1. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    Directory of Open Access Journals (Sweden)

    Stefano Cecchi

    2017-02-01

    Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

  2. Theoretical study of electronic structures and spectroscopic properties of Ga 3Sn, GaSn 3, and their ions

    Science.gov (United States)

    Zhu, Xiaolei

    2007-01-01

    Ground and excited states of mixed gallium stannide tetramers (Ga 3Sn, Ga 3Sn +, Ga 3Sn -, GaSn 3, GaSn 3+, and GaSn 3-) are investigated employing the complete active space self-consistent-field (CASSCF), density function theory (DFT), and the coupled-cluster single and double substitution (including triple excitations) (CCSD(T)) methods. The ground states of Ga 3Sn, Ga 3Sn +, and Ga 3Sn - are found to be the 2A 1, 3B 1, and 1A 1 states in C2v symmetry with a planar quadrilateral geometry, respectively. The ground states of GaSn 3 and GaSn 3- is predicted to be the 2A 1 and 1A 1 states in C2v point group with a planar quadrilateral structure, respectively, while the ground state of GaSn 3+ is the 1A 1 state with ideal triangular pyramid C3v geometry. Equilibrium geometries, vibrational frequencies, binding energies, electron affinities, ionization energies, and other properties of Ga 3Sn and GaSn 3 are computed and discussed. The anion photoelectron spectra of Ga 3Sn - and GaSn 3- are also predicted. It is interesting to find that the amount of charge transfer between Ga and Sn 2 atoms in the 1A 1 state of GaSn 3+ greatly increases upon electron ionization from the 2A 1 state of GaSn 3, which may be caused by large geometry change. On the other hand, the results of the low-lying states of Ga 3Sn and GaSn 3 are compared with those of Ga 3Si and GaSi 3.

  3. Microstructure control of Zr-Nb-Sn alloy with Mo addition for HWR pressure tube application

    International Nuclear Information System (INIS)

    Hwang, S. K.; Kim, M. H.; Kim, J. H.; Kwon, S. I.; Kim, Y. S.

    1997-01-01

    As a basic research to develop the material for heavy water reactor pressure tube application the effect of Mo addition to Zr-Nb-Sn alloy was studied for the purpose of minimizing the amount of cold working while maintaining a high strength. To select the target alloy system we first designed various alloy compositions and chose Zr-Nb-Sn and Zr-Nb-Mo through multi-regression analysis of the relationship between the basic properties and the compositions. Plasma arc melting was used to produce the alloys and the microstructure change introduced by the processing steps including hot forging, beta-heat treatment, hot rolling, cold rolling and recrystallization heat treatment was investigated. Recrystallization of Zr-Nb-Sn was retarded by adding Mo and this resulted in a fine grain structure in Zr-Nb-Sn-Mo alloy. Beside the retarding effect recrystallization, Mo increased the amount of residual beta phase and showed an indication of precipitation hardening, which added up to the possibility of applying the alloy for the desired usage. (author)

  4. Pion-induced fission of 209Bi and 119Sn: measurements, calculations, analyses and comparison

    International Nuclear Information System (INIS)

    Rana, M.A.; Sher, G.; Manzoor, S.; Shehzad, M.I.

    2011-01-01

    Cross-sections for the π - -induced fission of 209 Bi and 119 Sn have been measured using the most sensitive CR-39 solid-state nuclear track detector. In experiments, target–detector stacks were exposed to negative pions of energy 500, 672, 1068, and 1665 MeV at the Brookhaven National Laboratory, USA. An important aspect of the present paper is the comparison of pion-induced fission fragment spectra of above mentioned nuclei with the spontaneous fission fragment spectra of 252 Cf. This comparison is made in terms of fission fragment track lengths in the CR-39 detectors. Measurement results are compared with calculations of Monte Carlo and statistical weight functions methods using the computer code CEM95. Agreement between measurements and calculations is fairly good for 209 Bi target nuclei whereas it is indigent for the case of 119 Sn. The possibilities of the trustworthy calculations, using the computer code CEM95, comparable with measurements of pion-induced fission in intermediate and heavy nuclei are explored by employing various systematics available in the code. Energy dependence of pion-induced fission in 119 Sn and 209 Bi is analyzed employing a newly defined parameter geometric-size-normalized fission cross-section (χ f g ). It is found that the collective nuclear excitations, which may lead to fission, become more probable for both 209 Bi and 119 Sn nuclei with increasing energy of negative pions from 500 to 1665 MeV. (author)

  5. Effect of Sn addition on the microstructure and superelasticity in Ti-Nb-Mo-Sn alloys.

    Science.gov (United States)

    Zhang, D C; Yang, S; Wei, M; Mao, Y F; Tan, C G; Lin, J G

    2012-09-01

    Ti-7.5Nb-4Mo-xSn (x=0-4at%) alloys were developed as the biomedical materials. The effect of the Sn content on the microstructure and superelasticity of the alloys was investigated. It is found that Sn is a strong stabilizer of the β phase, which is effective in suppressing the formation of α″ and ω phases in the alloys. Moreover, the Sn addition has a significant impact on the mechanical properties of the alloys. With the increase of Sn addition, the yield stress of the alloys increase, but their elastic modulus, the fracture strength and the ductility decrease, and the deformation mode of the alloys changes from (322) twining to α″ transformation and then to slip. The Ti-7.5Nb-4Mo-1Sn and Ti-7.5Nb-4Mo-3Sn alloys exhibit a good superelasticity with a high σ(SIM) due to the relatively high athermal ω phases containing or the solution hardening at room temperature. Under the maximum strain of 5%, Ti-7.5Nb-4Mo-3Sn (at%) alloy exhibits higher super elastic stability than that of Ti-7.5Nb-4Mo-1Sn alloy. Copyright © 2012 Elsevier Ltd. All rights reserved.

  6. Fluid sensitive nanoscale switching with quantum levitation controlled by $\\alpha$-Sn/$\\beta$-Sn phase transition

    OpenAIRE

    Boström, Mathias; Dou, Maofeng; Malyi, Oleksandr I.; Parashar, Prachi; Parsons, Drew F.; Brevik, Iver; Persson, Clas

    2018-01-01

    We analyze the Lifshitz pressure between silica and tin separated by a liquid mixture of bromobenzene and chlorobenzene. We show that the phase transition from semimetallic α−Sn to metallic β−Sn can switch Lifshitz forces from repulsive to attractive. This effect is caused by the difference in dielectric functions of α−Sn and β−Sn, giving both attractive and repulsive contributions to the total Lifshitz pressure in different frequency regions controlled by the composition of the intervening l...

  7. Oxidation of Pb-Sn and Pb-Sn-In alloys

    International Nuclear Information System (INIS)

    Sluzewski, D.A.; Chang, Y.A.; Marcotte, V.C.

    1990-01-01

    Air oxidized Pb-Sn and Pb-Sn-In single phase alloys have been studied with scanning Auger microscopy. Line scans across grain boundaries combined with argon ion sputter etching revealed grain boundary oxidation. In the Pb-Sn samples, tin is preferentially oxidized with the grain boundary regions having a much higher percentage of tin oxide than the bulk surface oxide. In the Pb-Sn-In alloys, both tin and indium are preferentially oxidized with the grain boundary regions being enriched with tin and indium oxides

  8. [Sb{sub 4}Au{sub 4}Sb{sub 4}]{sup 2−}: A designer all-metal aromatic sandwich

    Energy Technology Data Exchange (ETDEWEB)

    Tian, Wen-Juan; You, Xue-Rui [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); Guo, Jin-Chang [Department of Chemistry, Xinzhou Teachers University, Xinzhou 034000 (China); Li, Da-Zhi, E-mail: hj.zhai@sxu.edu.cn, E-mail: ldz005@126.com [Department of Chemical Engineering, Binzhou University, Binzhou 256603 (China); Wang, Ying-Jin [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); Department of Chemistry, Xinzhou Teachers University, Xinzhou 034000 (China); Sun, Zhong-Ming [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhai, Hua-Jin, E-mail: hj.zhai@sxu.edu.cn, E-mail: ldz005@126.com [Nanocluster Laboratory, Institute of Molecular Science, Shanxi University, Taiyuan 030006 (China); State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006 (China)

    2016-07-28

    We report on the computational design of an all-metal aromatic sandwich, [Sb{sub 4}Au{sub 4}Sb{sub 4}]{sup 2−}. The triple-layered, square-prismatic sandwich complex is the global minimum of the system from Coalescence Kick and Minima Hopping structural searches. Following a standard, qualitative chemical bonding analysis via canonical molecular orbitals, the sandwich complex can be formally described as [Sb{sub 4}]{sup +}[Au{sub 4}]{sup 4−}[Sb{sub 4}]{sup +}, showing ionic bonding characters with electron transfers in between the Sb{sub 4}/Au{sub 4}/Sb{sub 4} layers. For an in-depth understanding of the system, one needs to go beyond the above picture. Significant Sb → Au donation and Sb ← Au back-donation occur, redistributing electrons from the Sb{sub 4}/Au{sub 4}/Sb{sub 4} layers to the interlayer Sb–Au–Sb edges, which effectively lead to four Sb–Au–Sb three-center two-electron bonds. The complex is a system with 30 valence electrons, excluding the Sb 5s and Au 5d lone-pairs. The two [Sb{sub 4}]{sup +} ligands constitute an unusual three-fold (π and σ) aromatic system with all 22 electrons being delocalized. An energy gap of ∼1.6 eV is predicted for this all-metal sandwich. The complex is a rare example for rational design of cluster compounds and invites forth-coming synthetic efforts.

  9. Effects upon metabolic pathways and energy production by Sb(III and As(III/Sb(III-oxidase gene aioA in Agrobacterium tumefaciens GW4.

    Directory of Open Access Journals (Sweden)

    Jingxin Li

    Full Text Available Agrobacterium tumefaciens GW4 is a heterotrophic arsenite [As(III]/antimonite [Sb(III]-oxidizing strain. The As(III oxidase AioAB is responsible for As(III oxidation in the periplasm and it is also involved in Sb(III oxidation in Agrobacterium tumefaciens 5A. In addition, Sb(III oxidase AnoA and cellular H2O2 are also responsible for Sb(III oxidation in strain GW4. However, the deletion of aioA increased the Sb(III oxidation efficiency in strain GW4. In the present study, we found that the cell mobility to Sb(III, ATP and NADH contents and heat release were also increased by Sb(III and more significantly in the aioA mutant. Proteomics and transcriptional analyses showed that proteins/genes involved in Sb(III oxidation and resistance, stress responses, carbon metabolism, cell mobility, phosphonate and phosphinate metabolism, and amino acid and nucleotide metabolism were induced by Sb(III and were more significantly induced in the aioA mutant. The results suggested that Sb(III oxidation may produce energy. In addition, without periplasmic AioAB, more Sb(III would enter bacterial cells, however, the cytoplasmic AnoA and the oxidative stress response proteins were significantly up-regulated, which may contribute to the increased Sb(III oxidation efficiency. Moreover, the carbon metabolism was also activated to generate more energy against Sb(III stress. The generated energy may be used in Sb transportation, DNA repair, amino acid synthesis, and cell mobility, and may be released in the form of heat.

  10. The crystallographic growth directions of Sn whiskers

    International Nuclear Information System (INIS)

    Stein, J.; Welzel, U.; Leineweber, A.; Huegel, W.; Mittemeijer, E.J.

    2015-01-01

    The growth directions of 55 Sn whiskers, i.e. the crystallographic orientation parallel to the whisker-growth axes, were determined using (i) a focused ion beam microscope for the determination of the physical growth angles of the whiskers with respect to a specimen (reference) coordinate system and (ii) an electron backscatter detector in a scanning electron microscope for the determination of the crystallographic orientation of the whiskers. The Sn whiskers were found to grow preferentially along low-index directions of the β-Sn crystal structure. The experimental findings of this study (and most of the results presented in the literature as well) were explained by applying, in a modified way, the Hartman–Perdok concept of periodic bond chains, i.e. chains of strong bonds running uninterruptedly through the structure, to the Sn whisker-growth phenomenon

  11. Discovery of 11 ASAS-SN Supernovae

    Science.gov (United States)

    Brimacombe, J.; Cacella, P.; Stone, G.; Fernandez, J. M.; Vallely, P.; Stanek, K. Z.; Kochanek, C. S.; Brown, J. S.; Shields, J.; Thompson, T. A.; Shappee, B. J.; Holoien, T. W.-S.; Prieto, J. L.; Bersier, D.; Dong, Subo; Bose, S.; Chen, Ping; Stritzinger, M.; Holmbo, S.; Nicholls, B.; Post, R. S.

    2018-05-01

    During the ongoing All Sky Automated Survey for SuperNovae (ASAS-SN, Shappee et al. 2014), using data from 14-cm telescopes in Hawaii, Texas, South Africa, and Chile, we discovered several new transient sources.

  12. Nb3Sn for Radio Frequency Cavities

    International Nuclear Information System (INIS)

    Godeke, A.

    2006-01-01

    In this article, the suitability of Nb3Sn to improve the performance of superconducting Radio-Frequency (RF) cavities is discussed. The use of Nb3Sn in RF cavities is recognized as an enabling technology to retain a very high cavity quality factor (Q0) at 4.2 K and to significantly improve the cavity accelerating efficiency per unit length (Eacc). This potential arises through the fundamental properties of Nb3Sn. The properties that are extensively characterized in the literature are, however, mainly related to improvements in current carrying capacity (Jc) in the vortex state. Much less is available for the Meissner state, which is of key importance to cavities. Relevant data, available for the Meissner state is summarized, and it is shown how this already validates the use of Nb3Sn. In addition, missing knowledge is highlighted and suggestions are given for further Meissner state specific research

  13. Beta-decay studies near 100Sn

    International Nuclear Information System (INIS)

    Rykaczewski, Krzysztof Piotr; Karny, M.; Batist, L.; Banu, A.; Becker, F.; Blazhev, A.; Burkard, K.; Bruchle, W.; Doring, J.; Faestermann, T.; Gorska, M.; Grawe, H.; Janas, Z.; Jungclaus, A.; Kavatsyuk, M.; Kavatsyuk, O.; Kirchner, R.; La Commara, M.; Mandal, S.; Mazzocchi, C.; Miernik, K.; Mukha, I.; Muralithar, S.; Plettner, C.; Plochocki, A.; Roeckl, E.; Romoli, M.; Schadel, M.; Schmidt, K.; Schwengner, R.; Zylicz, J.

    2005-01-01

    The β-decay of 102 Sn was studied by using high-resolution germanium detectors as well as a Total Absorption Spectrometer (TAS). A decay scheme has been constructed based on the γ-γ coincidence data. The total experimental Gamow-Teller strength B GT exp of 102 Sn was deduced from the TAS data to be 4.2(9). A search for β-delayed γ-rays of 100 Sn decay remained unsuccessful. However, a Gamow-Teller hindrance factor h = 2.2(3), and a cross-section of about 3nb for the production of 100 Sn in fusion-evaporation reaction between 58 Ni beam and 50 Cr target have been estimated from the data on heavier tin isotopes. The estimated hindrance factor is similar to the values derived for lower shell nuclei

  14. Coulomb excitation of {sup 107}Sn

    Energy Technology Data Exchange (ETDEWEB)

    DiJulio, D.D.; Cederkall, J.; Fahlander, C. [Lund University, Physics Department, 118, Lund (Sweden); Ekstroem, A. [University of Oslo, Department of Physics and Center of Mathematics for Applications, Oslo (Norway); Hjorth-Jensen, M. [University of Oslo, Department of Physics and Center of Mathematics for Applications, Oslo (Norway); Michigan State University, National Superconducting Cyclotron Laboratory and Department of Physics and Astronomy, East Lansing, MI (United States); Albers, M.; Blazhev, A.; Fransen, C.; Geibel, K.; Hess, H.; Reiter, P.; Seidlitz, M.; Taprogge, J.; Warr, N. [University of Cologne, Institute of Nuclear Physics, Cologne (Germany); Bildstein, V.; Gernhaeuser, R.; Wimmer, K. [Technische Universitaet Muenchen, Physik Department E12, Garching (Germany); Darby, I.; Witte, H. de [Instituut voor Kern- en Stralingsfysica, Leuven (Belgium); Davinson, T. [University of Edinburgh, Department of Physics and Astronomy, Edinburgh (United Kingdom); Diriken, J. [Instituut voor Kern- en Stralingsfysica, Leuven (Belgium); Studiecentrum voor Kernenergie/Centre d' Etude de l' energie Nucleaire (SCK CEN), Mol (Belgium); Goergen, A.; Siem, S.; Tveten, G.M. [University of Oslo, Department of Physics, Oslo (Norway); Iwanicki, J. [University of Warsaw, Heavy Ion Laboratory, Warsaw (Poland); Lutter, R. [Ludwig-Maximilians-Universitaet Muenchen, Fakultaet fuer Physik, Garching (Germany); Scheck, M. [University of Liverpool, Oliver Lodge Laboratory, Liverpool (United Kingdom); Walle, J.V. de [PH Department, Geneva 23 (Switzerland); Voulot, D.; Wenander, F. [AB Department, Geneva 23 (Switzerland)

    2012-07-15

    The radioactive isotope {sup 107}Sn was studied using Coulomb excitation at the REX-ISOLDE facility at CERN. This is the lightest odd-Sn nucleus examined using this technique. The reduced transition probability of the lowest-lying 3/2{sup +} state was measured and is compared to shell-model predictions based on several sets of single-neutron energies relative to {sup 100}Sn. Similar to the transition probabilities for the 2{sup +} states in the neutron-deficient even-even Sn nuclei, the measured value is underestimated by shell-model calculations. Part of the strength may be recovered by considering the ordering of the d{sub 5/2} and g{sub 7/2} single-neutron states. (orig.)

  15. Long-range order in InAsSb

    Science.gov (United States)

    Jen, H. R.; Ma, K. Y.; Stringfellow, G. B.

    1989-03-01

    Results are presented of transmission electron diffraction (TED) observations, demonstrating, for the first time, a CuPt-type ordering in InAs(1-x)Sb(x) alloys, over a wide range of x values (from x = 0.22 to 0.88). The InAsSb alloys were prepared by OMVPE on (001) oriented undoped InSb or InAs substrates. The ordering-induced spots on the TED patterns show the highest intensity for x of about 0.5 and the lowest intensity toward each binary end compound. Only two of the four variants are formed during growth. In some areas, the degree of order for these two variants, 1/2(-1 1 1) and 1/2(1 -1 1), is equal, and in other areas, one variant dominates.

  16. Extremely large magnetoresistance and electronic structure of TmSb

    Science.gov (United States)

    Wang, Yi-Yan; Zhang, Hongyun; Lu, Xiao-Qin; Sun, Lin-Lin; Xu, Sheng; Lu, Zhong-Yi; Liu, Kai; Zhou, Shuyun; Xia, Tian-Long

    2018-02-01

    We report the magnetotransport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at the X point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.

  17. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    International Nuclear Information System (INIS)

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-01-01

    Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

  18. Synthesis, characterization and photocatalytic performance of SnS nanofibers and SnSe nanofibers derived from the electrospinning-made SnO{sub 2} nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Li; Li, Dan; Dong, Xiangting; Ma, Qianli; Yu, Wensheng; Wang, Xinlu; Yu, Hui; Wang, Jinxian; Liu, Guixia, E-mail: dongxiangting888@163.com [Key Laboratory of Applied Chemistry and Nanotechnology at Universities of Jilin Province, Changchun University of Science and Technology, Changchun (China)

    2017-11-15

    SnO{sub 2} nanofibers were fabricated by calcination of the electrospun PVP/SnCl{sub 4} composite nanofibers. For the first time, SnS nanofibers and SnSe nanofibers were successfully synthesized by double crucible sulfurization and selenidation methods via inheriting the morphology of SnO{sub 2} nanofibers used as precursors, respectively. X-ray diffraction (XRD) analysis shows SnS nanofibers and SnSe nanofibers are respectively pure orthorhombic phase with space group of Pbnm and Cmcm. Scanning electron microscope (SEM) observation indicates that the diameters of SnS nanofibers and SnSe nanofibers are respectively 140.54±12.80 nm and 96.52±14.17 nm under the 95 % confidence level. The photocatalytic activities of samples were studied by using rhodamine B (Rh B) as degradation agent. When SnS or SnSe nanofibers are employed as the photocatalysts, the respective degradation rates of Rh B solution under the ultraviolet light irradiation after 200 min irradiation are 92.55 % and 92.86 %. The photocatalytic mechanism and formation process of SnS and SnSe nanofibers are also provided. More importantly, this preparation technique is of universal significance to prepare other metal chalcogenides nanofibers. (author)

  19. A heavy load for heavy ions

    CERN Multimedia

    2003-01-01

    On 25 September, the two large coils for the dipole magnet of ALICE, the LHC experiment dedicated to heavy ions, arrived at Point 2 on two heavy load trucks after a 1200 km journey from their assembly in Vannes, France.

  20. Investigation on the structural stability and electronic properties of InSb nanostructures – A DFT approach

    Directory of Open Access Journals (Sweden)

    V. Nagarajan

    2014-06-01

    Full Text Available The realistic InSb nanostructures namely InSb nanoring, InSb nanocube, InSb nanocube-18, InSb nanosheet, InSb nanocage and InSb nanocube-27 are simulated and optimized successfully using B3LYP/LanL2DZ basis set. The stability of InSb nanostructures is studied in terms of binding energy, vibrational studies and calculated energy. The electronic properties of InSb nanostructures are discussed using ionization potential, electron affinity and HOMO–LUMO gap. Point symmetry and dipole moment of InSb nanostructures are reported. Incorporation of impurity atom in InSb nanostructures is studied using embedding energy. The present study provides the information regarding the enhanced electronic properties of InSb nanostructure which finds its potential importance in microelectronics and optoelectronic devices.